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Sample records for titanate srtio3 films

  1. Optical properties of SrTiO3 films

    International Nuclear Information System (INIS)

    Agasiyev, A.A.; Magerramov, E.M.; Mammadov, M.Z.; Sarmasov, S.M.

    2010-01-01

    The spectrums of optical absorption of amorphous and single crystalline films SrTiO 3 at temperatures : 105 K, 300 K, 400 K are investigated. The temperature dependences of slope absorption edge, forbidden gap and characteristic constant of Urbah rule are obtained. The forbidden gap of single crystalline film SrTiO 3 and average shift shift of absorption edge degree are defined. It is established that edge of optical absorption of SrTiO 3 film is obeyed to Urbah rule and the absorption in the investigated region is caused by the transition of electron interacting with phonon

  2. Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

    Science.gov (United States)

    2015-12-01

    characteristics . Our work demonstrated a significant increase in the quality of the optimized STO thin films with respect to STO films grown prior to the MOCVD...deposition, the reactor and precursor supply lines were baked at 250 °C for at least 4 h with a total Ar carrier gas flow of 5,000 sccm to remove...S. Thermal leakage characteristics of Pt/SrTiO3/Pt structures. Journal of Vacuum Science & Technology A. 2008;26:555–557. 31. Ryen L, Olsson E

  3. Microstructure of Homoepitaxial SrTiO3 Films Deposited by Laser Ablation

    International Nuclear Information System (INIS)

    Tse, Y Y; Jackson, T J; Koutsonas, Y; Passerieux, G; Jones, I P

    2006-01-01

    Homoepitaxial strontium titanate thin films have been grown by pulsed laser deposition on (001) SrTiO 3 (STO) substrates with pulse rates ranging from 0.15 Hz to 100 Hz. The microstructure of the as-deposited films has been characterised by cross-sectional transmission electron microscopy. It is found that the growth mode and microstructure of the films are strongly influenced by the intervals between the laser pulses. Films have homogeneous microstructure under a critical thickness, above which the film breaks into toothlike columns. The growth is unstable against the formation of low angle boundaries which result in the formation of grains elongated in the direction of film growth. These become toothlike structures and the size of the tooth depends on the pulse rate and the growth time. The diffusion of point defects in films grown over a long time can lead instead to the development of elongated vacancy clusters directed normal to the film-vacuum interface. All films grow with a high density of point defects which may be related to deviation from the stoichiometry of the ceramic ablation target. Microanalysis suggests that there is strontium loss in the film, which causes defect formation inside the STO films

  4. Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zhou, X. Y.; Miao, J.; Dai, J. Y.; Chan, H. L. W.; Choy, C. L.; Wang, Y.; Li, Q.

    2007-01-01

    SrTiO 3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO 3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO 3 /Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO 3 and the interfacial structure. Electrical measurements revealed that the SrTiO 3 film was highly resistive

  5. Reactive Coevaporation Synthesis and Characterization of SrTiO3 Thin Films

    Science.gov (United States)

    Yamaguchi, Hiromu; Matsubara, Shogo; Miyasaka, Yoichi

    1991-09-01

    SrTiO3 thin films were prepared by the reactive coevaporation method, where the Ti and Sr metals were evaporated in oxygen ambient with an E-gun and K-cell, respectively. A uniform depth profile in composition was achieved by altering the Ti evaporation rate according to the Sr evaporation rate change. A typical dielectric constant of 170 was measured on films of 75 nm in thickness. The in-situ annealing in oxygen plasma reduced the leakage current.

  6. Defect engineering of SrTiO3 thin films for resistive switching applications

    International Nuclear Information System (INIS)

    Wicklein, Sebastian

    2013-01-01

    As a matter of fact, the importance of (transition) metal oxides for modern applications in the field of energy and information technology (IT) for e.g. novel energy storage systems and solid state electronic devices is increasing. Previous studies discovered the importance of defects in an oxide for their functionality and emphasized the impact of stoichiometry on the oxide performance. A new field of interest of the memory technology sector is the so-called resistive switching phenomena where a voltage stimulus causes a thin oxide (≤10 nm) to change its resistance state from a high resistance state to a low resistance state and back. So called resistive RAM (ReRAM or RRAM) are deemed to be the future replacement (2015) for contemporary FLASH memory technology due to its extremely low energy consumption, its very fast read/write time (ns) and its possible node size 3 was used as an oxide model material and was deposited by pulsed laser deposition (PLD) onto doped and undoped SrTiO 3 single crystals to investigate the formation of defects as a function of the process parameters. By combining structural and chemical thin film analysis with detailed PLD plume diagnostics and modeling of the laser plume dynamics, it was possible to elucidate the different physical mechanisms determining the stoichiometry of SrTiO 3 during PLD. Deviations between thin film and target stoichiometry are basically a result of two effects, namely, incongruent ablation and preferential scattering of lighter ablated species during their motion towards the substrate in the O 2 background gas. It is shown that the SrTiO 3 system reacts to a non-stoichiometry with the systematic incorporation of titanium and strontium vacancies which could be detected by positron annihilation lifetime spectroscopy. The role of extrinsic dopands such as Fe is shown to have more complicated effects on the SrTiO 3 system than portrayed by theoretical considerations. The effect of defects on the resistive

  7. Studies on Gas Sensing Performance of Pure and Surface Modified SrTiO3 Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    V. B. Gaikwad

    2009-08-01

    Full Text Available Strontium Titanate (SrTiO3 (ST was prepared mechanochemically from Sr(OH2 and TiO2. XRD confirms the Perovskite phase of material. Thick films of ST were prepared by screen-printing technique. The gas sensing performances of thick films were tested for various gases. It showed maximum sensitivity to CO gas at 350 oC for 100 ppm gas concentration. To improve the sensitivity and selectivity of the film towards a particular gas, ST thick films were surface modified by dipping them in a solution of nano copper for different intervals of time. These surface modified ST films showed larger sensitivity to H2S gas (100 ppm at 300 oC than pure ST film. A systematic study, of sensing performance of the sensor, indicates the key role-played by the nano copper species on the surface .The sensitivity, selectivity, response and recovery time of the sensor were measured and presented.

  8. Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO3 thin films

    International Nuclear Information System (INIS)

    Menke, Tobias

    2009-01-01

    To overcome the physical limits of todays memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, the model system Strontium titanate (SrTiO 3 ) has been investigated to get a deeper understanding of the underlying physical mechanism related to the resistance change. The electrical properties of SrTiO 3 (STO) can be modulated from a band insulator to metallic conduction by a self-doping with oxygen vacancies which act as shallow donors. A local accumulation or depletion of oxygen vacancies at the vicinity of the surface will lead to a local redox process which is responsible for the resistance change. To study the influence of the interfaces on the switching properties of SrTiO 3 thin films, epitaxial films of Fe-doped SrTiO 3 were grown on different bottom electrodes (SrRuO 3 , LaNiO 3 und Nb:STO) by a ''Pulsed Laser Deposition'' technique. An atomic force microscope equipped with a conductive tip (LC-AFM) allowed studying the conductivity of the deposited films on the nanometer scale. Resistive switching of lateral structures smaller than ∝5 nm could be realized which represents the potential of this material for a further downscaling of RRAM devices. The deposition of top electrodes, made of Platinum or Titanium, allowed the electrical characterization of metal-insulator-metal (MIM) structures. An extensive investigation of pristine MIM-devices by impedance spectroscopy showed the big impact of the metal-insulator interface on the overall device resistance. Furthermore, a chemical polarization was studied by dynamical current sweeps and identified as a volatile resistance variation. Usually a forming procedure is needed to ''enable'' the resistive switching properties in MIM devices. The electroforming of these devices was extensively studied and could be

  9. Deposition of SrTiO3 films by electrophoresis with thickness and particle size control

    International Nuclear Information System (INIS)

    Junior, W.D.M.; Pena, A.F.V.; Souza, A.E.; Santos, G.T.A.; Teixeira, S.R.; Senos, A.M.R.; Longo, E.

    2012-01-01

    The SrTiO3 (ST) is a material that exhibits semiconducting characteristics and interesting electrical properties. In room temperature has a structure of high cubic symmetry. The size of the crystallites of this material directly influences this symmetry, changing its network parameters. ST nanoparticles are obtained by hydrothermal method assisted by microwave (MAH). ST films are prepared by electrophoretic deposition (EPD). Approximately 1 g of the powder is dissolved in 100 ml of acetone and 1.5 ml of triethanolamine. The stainless steel substrates are arranged horizontally in the solution. The depositions are performed for 1-10 min and subjected to a potential difference of 20-100 V. The films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). The characterizations show that it is possible to control both the thickness and size of the crystallites of the film depending on the deposition parameters adopted. (author)

  10. Giant Polarization Rotation in BiFeO3/SrTiO3 Thin Films.

    Science.gov (United States)

    Langner, M. C.; Chu, Y. H.; Martin, L. M.; Gajek, M.; Ramesh, R.; Orenstein, J.

    2008-03-01

    We use optical second harmonic generation to probe dynamics of the ferroelectric polarization in (111) oriented BiFeO3 thin films grown on SrTiO3 substrates. The second harmonic response indicates 3m point group symmetry and is consistent with a spontaneous polarization normal to the surface of the film. We measure large changes in amplitude and lowering of symmetry, consistent with polarization rotation, when modest electric fields are applied in the plane of the film. At room temperature the rotation is an order of magnitude larger than expected from reported values of the dielectric constant and increases further (as 1/T) as temperature is lowered. We propose a substrate interaction model to explain these results.

  11. Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wei, X. H.; Li, Y. R.; Zhu, J.; Huang, W.; Zhang, Y.; Luo, W. B.; Ji, H.

    2007-01-01

    Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam epitaxy on (001)- (011)-, and (111)-orientated SrTiO 3 single-crystal substrates. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial orientation relations were reconfirmed by ex situ x-ray diffraction measurements. In the case of ZnO on SrTiO 3 (001), four orthogonal domains coexisted in the ZnO epilayer, i.e., ZnO(110) parallel SrTiO 3 (001) and ZnO[-111] parallel SrTiO 3 . For (011)- and (111)-orientated substrates, single-domain epitaxy with c axial orientation was observed, in which the in-plane relationship was ZnO[110] parallel SrTiO 3 [110] irrespective of the substrate orientations. Additionally, the crystalline quality of ZnO on SrTiO 3 (111) was better than that of ZnO on SrTiO 3 (011) because of the same symmetry between the (111) substrates and (001) films. The obtained results can be attributed to the difference of the in-plane crystallographic symmetry. Furthermore, those alignments can be explained by the interface stress between the substrates and the films

  12. Structure and cation distribution of (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001)

    Science.gov (United States)

    Welke, M.; Brachwitz, K.; Lorenz, M.; Grundmann, M.; Schindler, K.-M.; Chassé, A.; Denecke, R.

    2017-06-01

    A comprehensive study on growth of ferrimagnetic manganese zinc ferrite (Mn0.5Zn0.5Fe2O4) films on single crystalline strontium titanate(001) (SrTiO3) substrates was carried out. Under the optimized conditions, a thin film with a layer thickness of 200 nm was deposited, and the structural properties were investigated. Contrary to data published in literature, no buffer layer was necessary to achieve epitaxial growth of a poorly lattice-matched layer. This was confirmed for Mn0.5Zn0.5Fe2O4(001) on SrTiO3(001) by x-ray diffraction and the adjoined phi scans, which also revealed a lattice compression of 1.2% of the manganese zinc ferrite film in the out-of-plane direction. Using x-ray photoelectron spectroscopy, the near surface stoichiometry of the film could be shown to agree with the intended one within the uncertainty of the method. X-ray absorption spectroscopy showed an electronic structure close to that published for bulk samples. Additional x-ray magnetic circular dichroism investigations were performed to answer detailed structural questions by a comparison of experimental data with the calculated ones. The calculations took into account ion sites (tetrahedral vs. octahedral coordination) as well as the charge of Fe ions (Fe2+ vs. Fe3+). Contrary to the expectation for a perfect normal spinel that only Fe3+ ions are present in octahedral sites, hints regarding the presence of additional Fe2+ in octahedral sites as well as Fe3+ ions in tetrahedral sites have been obtained. Altogether, the layer could be shown to be mostly in a normal spinel configuration.

  13. Infrared characterization of strontium titanate thin films

    International Nuclear Information System (INIS)

    Almeida, B.G.; Pietka, A.; Mendes, J.A.

    2004-01-01

    Strontium titanate thin films have been prepared at different oxygen pressures with various post-deposition annealing treatments. The films were deposited by pulsed laser ablation at room temperature on Si(0 0 1) substrates with a silica buffer layer. Infrared reflectance measurements were performed in order to determine relevant film parameters such as layer thicknesses and chemical composition. The infrared reflectance spectra were fitted by using adequate dielectric function forms for each layer. The fitting procedure provided the extraction of the dielectric functions of the strontium titanate film, the silica layer and the substrate. The as-deposited films are found to be amorphous, and their infrared spectra present peaks corresponding to modes with high damping constants. As the annealing time and temperature increases the strontium titanate layer becomes more ordered so that it can be described by its SrTiO 3 bulk mode parameters. Also, the silica layer grows along with the ordering of the strontium titanate film, due to oxidation during annealing

  14. Fractal formation of a Y-Ba-Cu-O thin film on SrTiO3

    International Nuclear Information System (INIS)

    Chow, L.; Chen, J.; Desai, V.; Sundaram, K.; Arora, S.

    1989-01-01

    Fractal formation has been observed after thermal annealing of the rf-sputtered Y-Ba-Cu-O thin film on SrTiO 3 substrate. Through energy-dispersive x-ray analysis, it was found that the composition of the fractal was YBa 2 Cu 3 O x and the surrounding film composition wasY 2 Ba 2 Cu 3 O x . The fractal dimensions D ranging from 1.26 to 1.65 were obtained using the standard sandbox method with different thresholds

  15. Morphology and structural studies of WO_3 films deposited on SrTiO_3 by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

    2016-01-01

    Highlights: • Highly oriented WO_3 stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO_3 films at 700 °C from monoclinic to tetragonal. - Abstract: WO_3 films have been grown by pulsed laser deposition on SrTiO_3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

  16. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

    International Nuclear Information System (INIS)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

    2013-01-01

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO 3 film grown on (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )O 3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ∼12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness

  17. Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

    International Nuclear Information System (INIS)

    Rozier, Y.; Gautier, B.; Hyvert, G.; Descamps, A.; Plossu, C.; Dubourdieu, C.; Ducroquet, F.

    2009-01-01

    The properties of SrTiO 3 thin films, grown by liquid injection metal organic chemical vapor deposition on Si/SiO 2 , using a mixture of precursors, have been investigated at the nanoscale using an Atomic Force Microscope in the so-called Conductive Atomic Force Microscopy mode. Maps of the leakage currents with a nanometric resolution have been obtained on films elaborated at different temperatures and stoichiometries in order to discriminate the role of each parameter on the onset of leakage currents in the resulting layers. It appears that the higher the deposition temperature, the higher the leakage currents of the films. The mapping with a nanometric precision allows to show a heterogeneous behaviour of the surface with leaky grains and insulating boundaries. The study of films elaborated at the same temperature with different compositions supports the assumption that the leakage currents on Ti-rich layers are far higher than on Sr-rich layers

  18. Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

    Science.gov (United States)

    Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

    2015-08-01

    A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

  19. Anisotropic electrical properties of epitaxial Yba2Cu3O7-gd films on (110) SrTiO3

    International Nuclear Information System (INIS)

    Gupta, A.; Koren, G.; Baseman, R.J.; Segmuller, A.; Holber, W.

    1989-01-01

    Epitaxial thin films of YBa 2 Cu 3 O 7 - δ were deposited on (110) SrTiO 3 at 600 degrees C in the presence of atomic oxygen using the laser ablation technique. X-ray diffraction patterns in the standard Bragg and grazing incidence modes show epitaxial growth of the films with their c-axis and axis parallel to the and directions in the plane of the substrate, respectively. Superconductivity with T c (R = ) = 82 K was found along the direction in the basal plane, whereas finite resistivity down to 5 k was observed along the c-axis direction. The authors maintain that these preliminary results suggest that YBa 2 Cu 3 O 7 - δ behaves like a true two-dimensional superconductor

  20. Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates

    KAUST Repository

    Park, Jihwey; Soh, Yeong-Ah; Aeppli, Gabriel; David, Adrian; Lin, Weinan; Wu, Tao

    2014-01-01

    The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10−3 millibars or 10−5 millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our

  1. Synthesis of BiFeO3 thin films on single-terminated Nb : SrTiO3 (111 substrates by intermittent microwave assisted hydrothermal method

    Directory of Open Access Journals (Sweden)

    Ivan Velasco-Davalos

    2016-06-01

    Full Text Available We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO3 (111 substrates and the deposition of ferroelectric BiFeO3 thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO34− or Ti4+ layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d111 and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO3 single crystal substrates. Multiferroic BiFeO3 thin films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO3 (111 substrates. Bi(NO33 and Fe(NO33 along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO3 films on Nb : SrTiO3 (100 substrates was verified by piezoresponse force microscopy.

  2. Surface structural reconstruction of SrVO3 thin films on SrTiO3 (001)

    Science.gov (United States)

    Wang, Gaomin; Saghayezhian, Mohammad; Chen, Lina; Guo, Hangwen; Zhang, Jiandi

    Paramagnetic metallic oxide SrVO3>(SVO) is an itinerant system known to undergo thickness-induced metal-insulator-transition (MIT) in ultrathin film form, which makes it a prototype system for the study of the mechanism behind metal-insulator-transition like structure distortion, electron correlations and disorder-induced localization. We have grown SrVO3 thin film with atomically flat surface through the layer-by-layer deposition by laser Molecular Beam Epitaxy (laser-MBE) on SrTiO3 (001) surface. Low Energy Electron Diffraction (LEED) measurements reveal that there is a (√2X √2) R45°surface reconstruction independent of film thickness. By using LEED-I(V) structure refinement, we determine the surface structure. In combination with X-ray Photoelectron Spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we discuss the implication on the MIT in ultrathin films below 2-3 unit cell thickness. This work is supported by the National Science Foundation under the NSF EPSCoR Cooperative Agreement No. EPS-1003897 with additional support from the Louisiana Board of Regents.

  3. Magnetic and electrical transport properties of LaBaCo2O(5.5+δ) thin films on vicinal (001) SrTiO3 surfaces.

    Science.gov (United States)

    Ma, Chunrui; Liu, Ming; Collins, Gregory; Wang, Haibin; Bao, Shanyong; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Lin, Yuan; Whangbo, Myung-Hwan

    2013-01-23

    Highly epitaxial LaBaCo(2)O(5.5+δ) thin films were grown on the vicinal (001) SrTiO(3) substrates with miscut angles of 0.5°, 3.0°, and 5.0° to systemically study strain effect on its physical properties. The electronic transport properties and magnetic behaviors of these films are strongly dependent on the miscut angles. With increasing the miscut angle, the transport property of the film changes from semiconducting to semimetallic, which results most probably from the locally strained domains induced by the surface step terraces. In addition, a very large magnetoresistance (34% at 60 K) was achieved for the 0.5°-miscut film, which is ~30% larger than that for the film grown on the regular (001) SrTiO(3) substrates.

  4. Microstructural Characterisation of Cuprate/Manganate Films on (110) SrTiO3 Deposited by Laser Ablation

    International Nuclear Information System (INIS)

    Tse, Y Y; Chakalov, R I; Joshi, M M; Jones, I P; Muirhead, C M; Palai, R

    2006-01-01

    Cross-sectional TEM and microanalysis were carried out to understand at a microscopic level the effects of microstructure and chemistry on the physical properties of manganites and manganite/cuprate films. TEM observations on pure LCMO grown on a (110) STO substrate were carried out first to determine the defect structure and detect any formation of second phase precipitates, as well as microstructural changes not detectable by X-ray reflections. La 0.7 Ca 0.3 MnO 3 (LCMO) grows epitaxially on a (110) SrTiO 3 (STO) substrate. HRTEM reveals a nearly defect-free interface between LCMO and STO with a few irregularly arranged misfit dislocations. The microstructure obtained from laser ablated nanometre scaled La 0.7 Ca 0.3 MnO 3 (LCMO)/YBa 2 Cu 3 O 7 -δ (YBCO)/PrBa 2 Cu 3 O 7 (PBCO) multilayers on (110) STO was also studied. Diffraction patterns show that all films grow epitaxially on top of the (110) STO substrate, with the c-axis of YBCO in plane. There is a roughness of about 10nm between PBCO and YBCO and the roughness is increased at the YBCO - LCMO interface

  5. Near-surface effects of transient oxidation and reduction on Nb-doped SrTiO3 epitaxial thin films

    Science.gov (United States)

    Chang, C. F.; Chen, Q. Y.; Wadekar, P. V.; Lozano, O.; Wong, M. S.; Hsieh, W. C.; Lin, W. Y.; Ko, H. H.; Lin, Q. J.; Huang, H. C.; Ho, N. J.; Tu, L. W.; Liao, H. H.; Chinta, P. V.; Chu, W. K.; Seo, H. W.

    2014-03-01

    We studied the effects of transient oxidation and reduction of Nb-doped epitaxial thin films through variations of PAr and PO2. The samples were prepared by co-sputtering of Nb and SrTiO3 on LaAlO3 substrates. The Nb-content were varied from 0-33.7%, as determined by PIXE. Contact resistance, sheet resistance, and optical properties are used to discriminate the effects.

  6. Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates

    KAUST Repository

    Park, Jihwey

    2014-02-24

    The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10−3 millibars or 10−5 millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our results show that the interface between LaAlO3 and SrTiO3 is sharper when the oxygen pressure is lower. Over time, the formation of various crystalline phases is observed while the crystalline thickness of the LaAlO3 layer remains unchanged. X-ray scattering as well as atomic force microscopy measurements indicate three-dimensional growth of such phases, which appear to be fed from an amorphous capping layer present in as-grown samples.

  7. Micro-spectroscopic investigation of valence change processes in resistive switching SrTiO3 thin films

    International Nuclear Information System (INIS)

    Koehl, Annemarie

    2014-01-01

    Due to physical limitations of the currently used flash memory in terms of writing speed and scalability, new concepts for data storage attract great interest. A possible alternative with promising characteristics are so-called ''Resistive Random Access Memories'' (ReRAM). These memory devices are based on the resistive switching effect where the electrical resistance of a metal-insulator-metal (MIM) structure can be switched reversibly by a current or voltage pulse. Although this effect attracted wide scientific as well as commercial interest, up to now the it is not fully understood on a microscopic scale. Consequently, in this work the chemical and physical modifications caused by the resistive switching process are studied by spectroscopic techniques. As most switching models predict a strongly localized rather than a homogeneous effect, advanced micro-spectroscopy techniques are employed where additionally the lateral structure of the sample is imaged. In this work Fe-doped SrTiO 3 films are used as model material due to the thorough understanding of their defect chemistry. The epitaxial thin films are prepared by pulsed laser deposition. In a first approach, transmission X-ray microscopy is employed to study the bulk properties of ReRAM devices. At first, a new procedure for sample preparation based on a selective etching process is developed in order to realize photon-transparent samples. Investigations of switched devices reveal a significant contribution of Ti 3+ states within growth defects. In contrast to the indirect evidence in previous studies, this observation directly confirms that the resistance change is based on a local redox-process. The localization of the switching process within the growth defects is explained by a self-accelerating process due to Joule heating within the pre-reduced defects. In a second approach, after removal of the top electrode the chemical and electronic structure of the former interface between the

  8. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

    International Nuclear Information System (INIS)

    Biegalski, M. D.; Trolier-McKinstry, S.; Schlom, D. G.; Fong, D. D.; Eastman, J. A.; Fuoss, P. H.; Streiffer, S. K.; Heeg, T.; Schubert, J.; Tian, W.; Nelson, C. T.; Pan, X. Q.; Hawley, M. E.; Bernhagen, M.; Reiche, P.; Uecker, R.

    2008-01-01

    Strained epitaxial SrTiO 3 films were grown on orthorhombic (101) DyScO 3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 A were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 A. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018 deg.). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 deg. C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO 3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films

  9. Epitaxial growth of YBa2Cu307−δ films on SrTiO3 (100) by direct solution precursor deposition

    International Nuclear Information System (INIS)

    Bustamante, A; Garcia, Jorge; Osorio, Ana M; Valladares, Luis De Los Santos; Barnes, C H W; González, J C; Azuma, Y; Majima, Y; Aguiar, J Albino

    2014-01-01

    We study the optimal temperature to obtain YBa 2 Cu 3 O 7-δ epitaxial films grown onto SrTiO 3 substrates by direct solution deposition. The samples received heat treatment at 820, 840 and 860 °C, then characterized by XRD, observing the (00l) profiles; and magnetic susceptibility measurements. The T C-onset for all the samples was 90 K. In addition, the current – voltage (I-V) measurements shows typical tunneling signals corresponding to normal metal-superconducting junctions indicating the films are promising for potential electrical applications.

  10. Suppression of oxygen diffusion by thin Al2O3 films grown on SrTiO3 studied using a monoenergetic positron beam

    International Nuclear Information System (INIS)

    Uedono, A.; Kiyohara, M.; Yasui, N.; Yamabe, K.

    2005-01-01

    The annealing behaviors of oxygen vacancies introduced by the epitaxial growth of thin SrTiO 3 and Al 2 O 3 films on SrTiO 3 substrates were studied by using a monoenergetic positron beam. The films were grown by molecular-beam epitaxy without using an oxidant. The Doppler broadening spectra of the annihilation radiation were measured as a function of the incident positron energy for samples fabricated under various growth conditions. The line-shape parameter S, corresponding to the annihilation of positrons in the substrate, was increased by the film growth, suggesting diffusion of oxygen from the substrate into the film and a resultant introduction of vacancies (mainly oxygen vacancies). A clear correlation between the value of S and the substrate conductivity was obtained. From isochronal annealing experiments, the Al 2 O 3 thin film was found to suppress the penetration of oxygen from the atmosphere for annealing temperatures below 600 deg. C. Degradation of the film's oxygen blocking property occurred due to the annealing at 700 deg. C, and this was attributed to the oxidation of the Al 2 O 3 by the atmosphere and the resultant introduction of vacancy-type defects

  11. Influence of crystal phases on electro-optic properties of epitaxially grown lanthanum-modified lead zirconate titanate films

    Science.gov (United States)

    Masuda, Shin; Seki, Atsushi; Masuda, Yoichiro

    2010-02-01

    We describe here how we have improved the crystal qualities and controlled the crystal phase of the lanthanum-modified lead zirconate titanate (PLZT) film without changing the composition ratio using an oxygen-pressure crystallization process. A PLZT film deposited on a SrTiO3 substrate with the largest electro-optic (EO) coefficient of 498 pm/V has been achieved by controlling the crystal phase of the film. Additionally, a fatigue-free lead zirconate titanate (PZT) capacitor with platinum electrodes has been realized by reducing the oxygen vacancies in the films.

  12. Growth and characterization of textured YBaCo2O5+δ thin films grown on (001)-SrTiO3 via DC magnetron sputtering

    International Nuclear Information System (INIS)

    Galeano, V.; Arnache, O.; Supelano, I.; Vargas, C.A. Parra; Morán, O.

    2016-01-01

    Thin films of the layered cobaltite YBaCo 2 O 5+δ were successfully grown on (001)-oriented SrTiO 3 single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo 2 O 5+δ thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo 2 O 5+δ , the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo 2 O 5+δ thin films are grown on SrTiO 3 substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

  13. Interface structure and electronic properties of SrTiO3 and YBa2Cu3O7-δ crystals and thin films

    International Nuclear Information System (INIS)

    Thiess, S.

    2007-01-01

    Two new extensions of the X-ray standing wave (XSW) technique, made possible by the intense highly collimated X-ray beams from undulators at the ESRF, are described in this thesis. First, the XSW method was applied in a structural study to solve the nucleation mechanism of the high temperature superconductor YBa 2 Cu 3 O 7-δ on the (001) surface of SrTiO 3 . Second, the valence electronic structures of SrTiO 3 and YBa 2 Cu 3 O 7-δ were investigated. Finally, recent developments in the field of photoelectron spectroscopy in the hard X-ray region are described. The X-ray standing wave method is used in combination with fluorescence, Auger or photoelectron spectroscopy and lends very high spatial resolution power to these analytical techniques. Previously, the XSW method has been used for structure determination of surfaces and interfaces. The currently available X-ray intensities permit extensions to the XSW technique. Two recently established applications, described in this thesis, are XSW real space imaging and XSW valence electronic structure analysis. XSW real space imaging was employed to analyse the atomic structure of 0.5 and 1.0 layers of YBa 2 Cu 3 O 7-δ deposited on SrTiO 3 (001). Three-dimensional images of the atomic distributions were reconstructed for each of the elements from experimentally determined Fourier components of the atomic distribution functions. The images confirmed the formation of a perovskite precursor phase prior to the formation of the YBa 2 Cu 3 O 7-δ phase during the growth of the first monolayer of the film. XSW valence electronic structure analysis applied to SrTiO 3 identified the valence band contributions arising from the strontium, titanium, and oxygen sites of the crystal lattice. Relations between the site-specific valence electronic structure and the lattice structure were established. The experimental results agree very well with predictions by state-of-the-art ab initio calculations. X-ray absorption cross sections for

  14. Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3 thin films with different compliance currents

    International Nuclear Information System (INIS)

    Tang, M H; Wang, Z P; Zeng, Z Q; Xu, X L; Wang, G Y; Zhang, L B; Xiao, Y G; Yang, S B; Jiang, B; Li, J C; He, J

    2011-01-01

    The SrTiO 3 (STO) thin films on a Pt/Ti/SiO 2 /Si substrate were synthesized using a sol–gel method to form a metal–insulator–metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current I cc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films

  15. Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

  16. Efficient degradation of Methylene Blue dye over highly reactive Cu doped strontium titanate (SrTiO3) nanoparticles photocatalyst under visible light.

    Science.gov (United States)

    Rahman, Qazi Inamur; Ahmad, Musheer; Misra, Sunil Kumar; Lohani, Minaxi

    2012-09-01

    Visible light induced photocatalysts of Cu doped SrTiO3 (Cu/SrTiO3) nanoparticles with the size -60-75 nm were prepared via facile sol-gel method. The morphological, optical, crystalline properties and compositions of synthesized Cu/SrTiO3 nanoparticles were thoroughly characterized by field emission scanning electron microscopy (FE-SEM), powder X-ray diffraction (XRD), ultra violet-visible spectroscopy (UV-Vis) and energy dispersive X-ray (EDX). A significant red shift in the UV-diffused reflectance spectrum was observed and the absorption edge shifted to visible region by the Cu doping. Surprisingly, the band gap of SrTiO3 was changed from 3.2 eV drop to 2.96 eV. The photocatalytic activity of the synthesized Cu/SrTiO3 nanoparticles was demonstrated for the degradation of Methylene Blue dye under visible light irradiation. The formation of new acceptor region in Cu/SrTiO3 was responsible for high photocatalytic activity of Cu/SrTiO3 nanoparticles. The results showed that the Methylene Blue dye was degraded by -66% within time span of 2 h over the Cu/SrTiO3 nanoparticles. This dye degradation reaction followed the Langmuir-Hinshelwood kinetics and also exhibited first order reaction rate. The calculated rate constant for the degradation reaction following first order kinetics was k = 0.0016 min(-1).

  17. Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films

    Directory of Open Access Journals (Sweden)

    Takanori Kiguchi, Kenta Aoyagi, Yoshitaka Ehara, Hiroshi Funakubo, Tomoaki Yamada, Noritaka Usami and Toyohiko J Konno

    2011-01-01

    Full Text Available We have studied the strain field around the 90° domains and misfit dislocations in PbTiO3/SrTiO3 (001 epitaxial thin films, at the nanoscale, using the geometric phase analysis (GPA combined with high-resolution transmission electron microscopy (HRTEM and high-angle annular dark field––scanning transmission electron microscopy (HAADF-STEM. The films typically contain a combination of a/c-mixed domains and misfit dislocations. The PbTiO3 layer was composed from the two types of the a-domain (90° domain: a typical a/c-mixed domain configuration where a-domains are 20–30 nm wide and nano sized domains with a width of about 3 nm. In the latter case, the nano sized a-domain does not contact the film/substrate interface; it remains far from the interface and stems from the misfit dislocation. Strain maps obtained from the GPA of HRTEM images show the elastic interaction between the a-domain and the dislocations. The normal strain field and lattice rotation match each other between them. Strain maps reveal that the a-domain nucleation takes place at the misfit dislocation. The lattice rotation around the misfit dislocation triggers the nucleation of the a-domain; the normal strains around the misfit dislocation relax the residual strain in a-domain; then, the a-domain growth takes place, accompanying the introduction of the additional dislocation perpendicular to the misfit dislocation and the dissociation of the dislocations into two pairs of partial dislocations with an APB, which is the bottom boundary of the a-domain. The novel mechanism of the nucleation and growth of 90° domain in PbTiO3/SrTiO3 epitaxial system has been proposed based on above the results.

  18. Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001 with tunable Fermi levels

    Directory of Open Access Journals (Sweden)

    Hua Guo

    2014-05-01

    Full Text Available In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1 thin films grown by molecular beam epitaxy on SrTiO3(001. Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES. ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

  19. Structure/Property Relationships for Sol-gel Derived YBa2Cu3O7-d and SrTiO3 Films

    Science.gov (United States)

    Dawley, Jeff; Clem, Paul; Siegal, Michael; Overmyer, Don

    2001-03-01

    Solution deposition of c-axis oriented YBa2Cu3O7-d (YBCO) films on buffered RABiT substrates is a potential method for rapid, low cost production of superconducting tapes for power transmission and other applications. For this work, 100-250 nm thick YBCO and SrTiO3 (STO) films have been prepared by spin-coating and dip-coating sol-gel solutions onto LaAlO3 (100) and RABiT Ni (200) substrates. Biaxially textured STO coatings have been deposited on LaAlO3 and RABiT Ni by using a "templating" technique and controlling growth temperature and pO2. YBCO films grown on STO coated LaAlO3 possess comparable superconducting properties to YBCO films grown directly on LaAlO3 ( 1 MA/cm2 at 77K), indicating that a high quality STO layer does not degrade the crystalline quality of the YBCO. The effects of processing parameters on the STO buffer layer and novel processing techniques for decreasing the processing time and simplifying the integration of sol-gel YBCO with Ni substrates will be discussed. Sandia is a multiprogram laboratory operated by Sandia Corp., a Lockheed Martin Company, for the US Dept. Of Energy under contract DE-AC04-94A185000.

  20. Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

    Science.gov (United States)

    Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

    2018-03-01

    Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

  1. Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

    International Nuclear Information System (INIS)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Posadas, Agham B.; Demkov, Alexander A.; Hu, Chengqing; Yu, Edward T.; Bruley, John

    2014-01-01

    Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO 3 (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO 3 (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225  °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600  °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure

  2. Highly oriented as-deposited superconducting laser ablated thin films of Y1Ba2Cu3O/sub 7-//sub δ/ on SrTiO3, zirconia, and Si substrates

    International Nuclear Information System (INIS)

    Koren, G.; Polturak, E.; Fisher, B.; Cohen, D.; Kimel, G.

    1988-01-01

    KrF excimer laser ablation of an Y 1 Ba 2 Cu 3 O/sub 7-//sub δ/ pellet in 0.1--0.2 Torr of O 2 ambient was used to deposit thin superconducting films onto SrTiO 3 , yttria-stabilized zirconia (YSZ), and silicon substrates at 600--700 0 C. The as-deposited 1-μm-thick films at 650--700 0 C substrate temperature were superconducting, without further high-temperature annealing. All films had a similar T/sub c/ onset of ∼92 K but different zero-resistance T/sub c/ of 90, 85, and 70 K for the films on SrTiO 3 , YSZ, and Si substrates, respectively. Angular x-ray diffraction analysis showed that all the films were highly oriented with the c axis perpendicular to their surface. Critical current densities at 77 K were about 40 000 and 10 000 A/cm 2 for the films on SrTiO 3 and YSZ, respectively. Smooth surface morphology was observed in all films, with occasional defects and cracks in the films on YSZ, which seems to explain the lower critical current in these films

  3. Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O3 films grown on Si and SrTiO3 substrates

    Science.gov (United States)

    Okamoto, Shoji; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

    2016-10-01

    {100}-oriented Pb(Zr x ,Ti1- x )O3 (PZT) thin films of approximately 2 µm thickness and Zr/(Zr + Ti) ratios of 0.39-0.65 were epitaxially grown on (100)cSrRuO3//(100)SrTiO3 (STO) and (100)cSrRuO3//(100)cLaNiO3//(100)CeO2//(100)YSZ//(100)Si (Si) substrates having different thermal expansion coefficients by pulsed metal-organic chemical vapor deposition (MOCVD). The effects of Zr/(Zr + Ti) ratio and type of substrate on the crystal structure and dielectric, ferroelectric and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that both films changed from having a tetragonal symmetry to rhombohedral symmetry through the coexisting region with increasing Zr/(Zr + Ti) ratio. This region showed the Zr/(Zr + Ti) ratios of 0.45-0.59 for the films on the STO substrates that were wider than the films on the Si substrates. Saturation polarization values were minimum at approximately Zr/(Zr + Ti) = 0.50 for the films on the STO substrates, and no obvious Zr/(Zr + Ti) ratio dependence was detected in the films on the Si substrates. On the other hand, the maximum field-induced strain values measured by scanning force microscopy at approximately Zr/(Zr + Ti) = 0.50 at 100 kV/cm were about 0.5 and 0.1% in the films on the Si and STO, respectively.

  4. Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

    KAUST Repository

    Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2012-01-01

    A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectricproperties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

  5. Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

    KAUST Repository

    Sarath Kumar, S. R.

    2012-12-03

    A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectricproperties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

  6. Structural and thermal characterization of La5Ca9Cu24O41 thin films grown by pulsed laser deposition on (1 1 0) SrTiO3 substrates

    International Nuclear Information System (INIS)

    Svoukis, E.; Athanasopoulos, G.I.; Altantzis, Th.; Lioutas, Ch.; Martin, R.S.; Revcolevschi, A.; Giapintzakis, J.

    2012-01-01

    In the present study stoichiometric, b-axis oriented La 5 Ca 9 Cu 24 O 41 thin films were grown by pulsed laser deposition on (1 1 0) SrTiO 3 substrates in the temperature range 600–750 °C. High resolution transmission electron microscopy was employed to investigate the growth mechanism and the epitaxial relationship between the SrTiO 3 substrates and the La 5 Ca 9 Cu 24 O 41 films grown at 700 °C. The 3-ω method was used to measure the cross-plane thermal conductivity of La 5 Ca 9 Cu 24 O 41 films in the temperature range 50–350 K. The observed glass-like behavior is attributed to atomic-scale defects, grain boundaries and an interfacial layer formed between film and substrate.

  7. Structural and functional properties of La1-xBaxMnO3 thin films on SrTiO3

    International Nuclear Information System (INIS)

    Belenchuk, A.; Kantser, V.; Shapoval, O.; Zasavitsky, E.; Moshnyaga, V.

    2011-01-01

    Full text: Colossal magneto resistive manganites such as La 1-x Ba x MnO3 (LBMO) show a reach diversity of a attractive physical properties and the epitaxy of manganites has figured conspicuously in the search for new generations of electronic materials for information processing, data storage, and sensing. All applications require manganite films with a smooth morphology and perfect functional properties such as a large magnetization and a small residual resistivity. We investigated the structural and functional properties of the epitaxial LBMO thin films grown on the near perfect matched SrTiO 3 substrates by metalorganic aerosol deposition technique. AFM surface analysis shows a very smooth films surface indicating the layer-by-layer growth mode. The occurrence of a distinct Laue thickness fringes in X-ray diffraction spectra indicates a high quality single-crystalline growth of an uniformly strained LBMO films. But the small-angle x-ray scattering reveals the presence of a few unit cells intermediate layer with a modified electronic density. Transport measurements determine a high metal-insulator transition temperature (T MI >340 K) confirming near optimal Ba doping of LBMO with the residual resistivity of 350 μΩcm at 50 K. According to the inductive coupled plasma emission spectroscopy analysis the LBMO has level of Ba doping x=0.32. However, SQUID magnetization measurements reveal the coexistence of a high Curie temperature (T C =335 K) and a low coercitive field (27-30 Oe) with a reduced saturation magnetization (∼3 μ B /Mn) and broadened para-ferromagnetic transition. The presence of magnetic phase inhomogeneity can be further revealed from the form of low-temperature magnetization loops. We discuss the results within the concept of a 'hidden' magnetic layer situated close to the film-substrate interface and the presence of magnetic phase separation phenomenon in the main part of the LBMO film. (authors)

  8. Epitaxial growth of SrTiO3 (001) films on multilayer buffered GaN (0002) by pulsed laser deposition

    International Nuclear Information System (INIS)

    Luo, W B; Jing, J; Shuai, Y; Zhu, J; Zhang, W L; Zhou, S; Gemming, S; Du, N; Schmidt, H

    2013-01-01

    SrTiO 3 films were grown on CeO 2 /YSZ/TiO 2 multilayer buffered GaN/Al 2 O 3 (0001) substrates with and without the YBa 2 Cu 3 O 7-x (YBCO) bridge layer by pulsed laser deposition (PLD). The deposition process of the buffer layers was in situ monitored by reflection high-energy electron diffraction. The crystallographical orientation of the heterostructure was studied by x-ray diffraction (XRD). With the introduction of the YBCO (001) layer, the STO (001) film was epitaxially grown on the GaN substrate. There were three sets of inplane domains separated from each other by 30° in both STO and YBCO buffer layers. The epitaxial relationship was STO (002)[110]∥YBCO(001)[110]∥CeO 2 (002)[010]∥YSZ (002)[010]∥GaN(0001)[1 1 -2 0] according to XRD results. By comparing the orientation of STO grown on GaN with and without the YBCO top buffer layer, the surface chemical bonding was found to be a very important factor in determining the orientation relationship of STO.

  9. Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2008-01-01

    Co(0 0 0 1) hcp /Fe(1 1 0) bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO 3 (1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0) bcc soft magnetic layer grew epitaxially on SrTiO 3 (1 1 1) substrate with two type variants, Nishiyama-Wasserman and Kurdjumov-Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1) hcp interlayer, while hcp-Co layer formed on Au(1 1 1) fcc or Ag(1 1 1) fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application

  10. Aspects of electron-phonon interactions with strong forward scattering in FeSe Thin Films on SrTiO3 substrates

    Science.gov (United States)

    Wang, Y.; Nakatsukasa, K.; Rademaker, L.; Berlijn, T.; Johnston, S.

    2016-05-01

    Mono- and multilayer FeSe thin films grown on SrTiO3 and BiTiO3 substrates exhibit a greatly enhanced superconductivity over that found in bulk FeSe. A number of proposals have been advanced for the mechanism of this enhancement. One possibility is the introduction of a cross-interface electron-phonon (e-ph) interaction between the FeSe electrons and oxygen phonons in the substrates that is peaked in the forward scattering (small {q}) direction due to the two-dimensional nature of the interface system. Motivated by this, we explore the consequences of such an interaction on the superconducting state and electronic structure of a two-dimensional system using Migdal-Eliashberg (ME) theory. This interaction produces not only deviations from the expectations of conventional phonon-mediated pairing but also replica structures in the spectral function and density of states, as probed by angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and quasiparticle interference imaging. We also discuss the applicability of ME theory for a situation where the e-ph interaction is peaked at small momentum transfer and in the FeSe/STO system.

  11. Above room-temperature ferromagnetism in La1-xCaxMnO3 epitaxial thin films on SrTiO3(001) substrates

    Science.gov (United States)

    Kou, Yunfang; Wang, Hui; Miao, Tian; Wang, Yanmei; Xie, Lin; Wang, Shasha; Liu, Hao; Lin, Hanxuan; Zhu, Yinyan; Wang, Wenbin; Du, Haifeng; Pan, Xiaoqing; Wu, Ruqian; Yin, Lifeng; Shen, Jian

    The colossal magnetoresistive (CMR) manganites are popular materials for spintronics applications due to their high spin polarization. Only a couple of manganites like La1-xSrxMnO3 have a Curie temperature (Tc) that is higher than room temperature. Finding methods to raise the Tc of manganites over room temperature is useful but challenging. In this work, we use the most intensively studied La1-xCaxMnO3 (LCMO) as the prototype system to demonstrate that Tc can be greatly enhanced by carefully tuning the electronic structure using doping and strain. Specifically, we grow LCMO films on SrTiO3 (001) substrates using pulsed laser deposition. Magnetic and transport measurements indicate a great enhancement of Tc over room temperature at x =0.2 doping. Theoretical calculations indicate that the combined effects from doping and strain give rise to a new electronic structure favoring ferromagnetism in LCMO system. Furthermore, using the La0.8Ca0.2MnO3 as ferromagnetic electrodes, we achieve finite tunneling magnetoresistance (TMR) above room temperature.

  12. Sulfide and Oxide Heterostructures For the SrTiO3 Thin Film Growth on Si and Their Structural and Interfacial Stabilities

    Science.gov (United States)

    Yoo, Young‑Zo; Song, Jeong‑Hwan; Konishi, Yoshinori; Kawasaki, Masashi; Koinuma, Hideomi; Chikyow, Toyohiro

    2006-03-01

    Epitaxial SrTiO3 (STO) thin films with high electrical properties were grown on Si using ZnS single- and SrS/MnS hetero-buffer layers. STO films on both ZnS-buffered and SrS/MnS-buffered Si showed two growth orientations, (100) and (110). The temperature dependence of the growth orientation for STO films was different for the ZnS single-buffer layer in comparison with the SrS/MnS heterobuffer layers. (100) growth of STO films on SrS/MnS-buffered Si became dominant at high temperatures about 700 °C, while (100) growth of STO films on ZnS-buffered Si became dominant at a relatively low growth temperature of 550 °C. STO(100) films on ZnS-buffered and SrS/MnS-buffered Si showed lattice and domain matches for epitaxial relationships with [001]ZnS\\parallel[011]STO and SrS[001]\\parallel[011]STO, respectively via 45° in-plane rotation of STO films relative to both ZnS and SrS layers. The ZnS buffer layer contained many stacking faults because of the mismatch between ZnS and Si, however, those defects were terminated at the ZnS/STO interface. In contrast, the MnS buffer was very stable against stacking defect formation. Transmission electron microscopy measurements revealed the presence of a disordered region at the ZnS/Si and MnS/Si interfaces. Auger electron spectroscopy and transmission electron microscopy results showed that a good MnS/Si interface at the initial growth stage degraded to a SiS2-x-rich phase during MnS deposition and again into a SiO2-x-rich phase during STO deposition at the high growth temperature of 700 °C. It was also observed that STO on SrS/MnS-buffered Si showed a markedly high dielectric constant compared with that of STO on ZnS-buffered Si.

  13. Surface morphology and in-plane-epitaxy of SmBa2Cu3O7-δ films on SrTiO3 (001) substrates studied by STM and grazing incidence x-ray diffraction

    DEFF Research Database (Denmark)

    Jiang, Q.D.; Smilgies, D.M.; Feidenhans'l, R.

    1996-01-01

    The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films as ...... films above h(c2), introduction of screw dislocations leads to spiral growth.......The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films...... substrate. Three different types of surface morphology were observed by STM with increasing film thickness h: a) 2D growth for hh(c2). With GIXRD, a density modulation is observed in the films with a thickness below h(c2). For thicker...

  14. C-axial oriented (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 thin film grown on Nb doped SrTiO3 substrate by pulsed laser deposition

    International Nuclear Information System (INIS)

    Cao, L Z; Fu, W Y; Wang, S F; Wang, Q; Sun, Z H; Yang, H; Cheng, B L; Wang, H; Zhou, Y L

    2007-01-01

    A c-axial oriented (Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 thin film has been grown on a (0 0 1) Nb doped SrTiO 3 substrate by pulsed laser deposition. The permittivity, dielectric loss and tunability of the c-axial oriented film are 187, 0.002 and 6% (at 750 kV cm -1 biasing), respectively, indicating a figure of merit of 30. Moreover, an asymmetry behaviour is observed in the dc electric field dependence of permittivity, which could be attributed to the asymmetry of top and bottom electrodes

  15. Epitaxial films of YBa2Cu3O/sub 7-//sub δ/ on NdGaO3, LaGaO3, and SrTiO3 substrates deposited by laser ablation

    International Nuclear Information System (INIS)

    Koren, G.; Gupta, A.; Giess, E.A.; Segmueller, A.; Laibowitz, R.B.

    1989-01-01

    Frequency-doubled Nd:YAG laser (532 nm) pulses of 1.7 J/cm 2 and 10 ns duration were used to deposit thin films of YBa 2 Cu 3 O/sub 7-//sub δ/ by laser ablation on NdGaO 3 , LaGaO 3 , and SrTiO 3 substrates held at 725 +- 5 0 C in 0.2 Torr of O 2 ambient. Electrical resistivities versus temperature of all films show normal metallic behavior and sharp superconducting transitions with T/sub c/ (R = 0) at 92--93 K. Critical current densities in 0.3--0.6 μm thick, 200 μm long, and 10--30 μm wide strips were measured to be 10 6 A/cm 2 at 60, 77, and 80 K in the films on LaGaO 3 , NdGaO 3 , and SrTiO 3 , respectively. X-ray diffraction patterns show that all films grew epitaxially, with domains of only two crystalline orientations rotated 90 0 with respect to each other in the a-b plane (consistent with twins), and the c axis perpendicular to the substrates. The closely matched lattice constants of the film and substrates (0.8--2.1%) result in epitaxial growth of the films

  16. Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

    KAUST Repository

    Yao, Yingbang

    2012-06-01

    (001)-oriented BiFeO 3 (BFO) thin films were grown on Sr xCa 1-xRuO 3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO 3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.

  17. Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

    International Nuclear Information System (INIS)

    Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

    2007-01-01

    Strained La 0.8 Ba 0.2 MnO 3 thin films on SrTiO 3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature T C increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La 1-x (Sr y Ba 1-y ) x MnO 3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of T C is attributed to the combination of the strain and interdiffusion effects

  18. Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

    Science.gov (United States)

    Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

    2007-02-01

    Strained La0.8Ba0.2MnO3 thin films on SrTiO3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature TC increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La1-x(SryBa1-y)xMnO3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of TC is attributed to the combination of the strain and interdiffusion effects.

  19. Development of Strontium Titanate Thin films on Technical Substrates for Superconducting Coated Conductors

    DEFF Research Database (Denmark)

    Pallewatta, Pallewatta G A P; Yue, Zhao; Grivel, Jean-Claude

    2012-01-01

    SrTiO3 is a widely studied perovskite material due to its advantages as a template for high temperature superconducting tapes. Heteroepitaxial SrTiO3 thin films were deposited on Ni/W tapes using dip-coating in a precursor solution followed by drying and annealing under reducing conditions. Nearl...

  20. Correlation between atomic structure and magnetic properties of La0.7Ca0.3MnO3 thin films grown on SrTiO3 (1 0 0)

    International Nuclear Information System (INIS)

    Rubio-Zuazo, J.; Andres, A. de; Taboada, S.; Prieto, C.; Martinez, J.L.; Castro, G.R.

    2005-01-01

    The crystallographic structure of La 0.7 Ca 0.3 MnO 3 (LCMO) ultra-thin films grown on SrTiO 3 (0 0 1) has been investigated by surface X-ray diffraction (SXD) and the correlation between their transport and magnetic properties and crystallographic structure is discussed. LCMO thin films in a thickness range between 2.4 and 27 nm were grown by DC-sputtering on SrTiO 3 (0 0 1). We distinguish two different crystallographic structures associated to the 2.4 and 27 nm thin films, respectively. The 27 nm film structure corresponds to a tetragonal perovskite (space group Pbnm), as has been reported for bulk LCMO. For the 2.4 nm film the La/Ca ions are located at the regular position of an ideal perovskite and the MnO 6 octahedrons are aligned along the c-axis. The MnO 2 stacking layer (basal plane) is distorted and coplanar to the a-b crystallographic axis with an anti-correlation between octahedron layers. This observed distortion is not compatible with the Pbnm space group. The new phase, which cannot be excluded to coexist at the interface of thicker films, can be described, as an example, through an I4/mcm or Pbcn space group. Based on the observed structure, plausible models to explain their transport and magnetic behaviour are proposed. For the 2.4 nm film, an octahedron in-plane (basal plane) distortion induced by the substrate is observed. Thicker films behave structurally and magnetically as bulk-like materials

  1. Misfit dislocations of anisotropic magnetoresistant Nd0.45Sr0.55MnO3 thin films grown on SrTiO3 (1 1 0) substrates

    International Nuclear Information System (INIS)

    Tang, Y.L.; Zhu, Y.L.; Meng, H.; Zhang, Y.Q.; Ma, X.L.

    2012-01-01

    Nd 0.45 Sr 0.55 MnO 3 is an A-type antiferromagnetic manganite showing obvious angular-dependent magnetoresistance, which can be tuned by misfit strain. The misfit strain relaxation of Nd 0.45 Sr 0.55 MnO 3 thin films is of both fundamental and technical importance. In this paper, microstructures of epitaxial Nd 0.45 Sr 0.55 MnO 3 thin films grown on SrTiO 3 (1 1 0) substrates by pulsed laser deposition were investigated by means of (scanning) transmission electron microscopy. The Nd 0.45 Sr 0.55 MnO 3 thin films exhibit a two-layered structure: a continuous perovskite layer epitaxial grown on the substrate followed by epitaxially grown columnar nanostructures. An approximately periodic array of misfit dislocations is found along the interface with line directions of both 〈1 1 1〉 and [0 0 1]. High-resolution (scanning) transmission electron microscopy reveals that all the misfit dislocations possess a〈1 1 0〉-type Burgers vectors. A formation mechanism based on gliding or climbing of the dislocations is proposed to elucidate this novel misfit dislocation configuration. These misfit dislocations have complex effects on the strain relaxation and microstructure of the films, and thus their influence needs further consideration for heteroepitaxial perovskite thin film systems, especially for films grown on substrates with low-symmetry surfaces such as SrTiO 3 (1 1 0) and (1 1 1), which are attracting attention for their potentially new functions.

  2. High Ic, YBa2Cu3O7-x films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO3 buffers

    International Nuclear Information System (INIS)

    Kursumovic, A; Durrell, J H; Harrington, S; Wimbush, S; MacManus-Driscoll, J L; Maiorov, B; Zhou, H; Stan, L; Holesinger, T G; Wang, H

    2009-01-01

    YBa 2 Cu 3 O 7-x (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO 3 (STO) substrates. In the presence of a 100 nm thick, 5 mol% Au-doped STO buffer, self-field critical current densities, J c sf , at 77 K of ∼2.4 MA cm -2 and critical currents, I c sf , up to 700 A (cm-width) -1 were achieved. The J c value is virtually independent of thickness and the growth rates are very high (∼1 μm min -1 ). From transmission electron microscopy (TEM), Y 2 O 3 nanocloud extended defects (∼100 nm in size) were identified as the pinning defects in the films. Enhanced random pinning was induced by the presence of Au in the buffer.

  3. Photo(electro)chemical oxidation of water by the persulfate ion over aqueous suspensions of strontium titanate SrTiO3 containing lanthanum chromite LaCrO3

    NARCIS (Netherlands)

    Thewissen, D.H.M.W.; Timmer, K.; Eeuwhorst‐Reinten, M.; Tinnemans, A.H.A.; Mackor, A.

    1982-01-01

    The photodecomposition of the S2O2‐ 8 ion to the SO2‐ 4 ion with concomitant oxidation of water to molecular oxygen over n‐type SrTiO3 powders mixed with LaCrO3 (mole fraction x = 0–1), using UV light (λ > 300 nm), is considerably faster than the photochemical (UV) decomposition of S2O2‐ 8 in water

  4. Visible light carrier generation in co-doped epitaxial titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason; Chambers, Scott A.

    2015-03-02

    Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity—which may be valuable in photovoltaic applications—and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance measurements confirm that optically generated carriers have a recombination lifetime comparable to that of STO and are in agreement with the observations from ellipsometry. Finally, through photoelectrochemical yield measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  5. Thickness dependence of microstructures in La0.9Sr0.1MnO3 thin films grown on exact-cut and miscut SrTiO3 substrates

    International Nuclear Information System (INIS)

    Zhang Hongdi; An Yukai; Mai Zhenhong; Lu Huibin; Zhao Kun; Pan Guoqiang; Li Ruipeng; Fan Rong

    2008-01-01

    The thickness dependence of microstructures of La 0.9 Sr 0.1 MnO 3 (LSMO) thin films grown on exact-cut and miscut SrTiO 3 (STO) substrates, respectively, was investigated by high-angle X-ray diffraction (HXRD), X-ray small-angle reflection (XSAR), X-ray reciprocal space mapping and atomic force microscopy (AFM). Results show that the LSMO films are in pseudocubic structure and are highly epitaxial [0 0 1]-oriented growth on the (0 0 1) STO substrates. The crystalline quality of the LSMO film is improved with thickness. The epitaxial relationship between the LSMO films and the STO substrates is [0 0 1] LSMO -parallel [0 0 1] EXACT-STO , and the LSMO films have a slight mosaic structure along the q x direction for the samples grown on the exact-cut STO substrates. However, an oriented angle of about 0.24 deg. exists between [0 0 1] LSMO and [0 0 1] MISCUT-STO , and the LSMO films have a mosaic structure along the q z direction for that grown on the miscut STO substrates. The mosaic structure of both groups of the samples tends to reduce with thickness. The diffraction intensity of the (0 0 4) peaks increases with thickness of the LSMO film. The XSAR and AFM observations show that for both groups, the interface is sharp and the surface is rather smooth. The mechanism was discussed briefly

  6. Absence of traditional magnetoresistivity mechanisms in Sr2FeMoO6 thin films grown on SrTiO3, MgO and NdGaO3 substrates.

    Science.gov (United States)

    Saloaro, M; Majumdar, S; Huhtinen, H; Paturi, P

    2012-09-12

    Magnetoresistive double perovskite Sr(2)FeMoO(6) thin films were grown with two different deposition pressures on SrTiO(3), MgO and NdGaO(3) substrates by pulsed laser deposition and thorough structural, magnetic and magneto-transport characterization was made. According to x-ray diffraction, all the films were phase pure and fully textured. Indication of substrate dependent strain and low angle grain boundaries was found, especially in films on MgO. Both the deposition pressure and the choice of the substrate have a strong influence on the saturation magnetization, M(s), and Curie temperature, T(C). The structural and magnetic data indicate the presence of anti-site disorder (ASD) in the films. The temperature dependence of resistivity showed semiconductive behaviour at temperatures below 100 K and metallic behaviour at higher temperatures. The semiconductive behaviour was found to increase with increasing ASD. In good quality films, up to 12% negative magnetoresistance (MR) was observed and films grown on MgO and NGO substrates also showed low field MR. However, the most significant observation of this study was that the magnetoresistivity of these Sr(2)FeMoO(6) thin films could not be explained with any traditional MR mechanism, but carried the clear signature of superposition of different mechanisms, in particular low angle grain boundary tunnelling and suppression of antiferromagnetically ordered domains under a magnetic field.

  7. Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructures

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Kleibeuker, Josée E.

    2011-01-01

    AlO3, SrTiO3, and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8MnO3 films on SrTiO3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface...

  8. Measurement of thermal conductance of La0.7Sr0.3MnO3 thin films deposited on SrTiO3 and MgO substrates

    Science.gov (United States)

    Aryan, A.; Guillet, B.; Routoure, J. M.; Fur, C.; Langlois, P.; Méchin, L.

    2015-01-01

    We present measurements of the thermal conductance of thin-film-on-substrate structures that could serve as thin film uncooled bolometers. Studied samples were 75 nm thick epitaxial La0.7Sr0.3MnO3 thin films deposited on SrTiO3 (0 0 1) and MgO (0 0 1) substrates patterned in square geometries of areas ranging from 50 μm × 50 μm to 200 μm × 200 μm. The model allows estimating thermal boundary conductance values at the interface between film and substrate of 0.28 ± 0.08 × 106 W K-1 m-2 for LSMO/STO (0 0 1) and 5.8 ± 3.0 × 106 W K-1 m-2 for LSMO/MgO (0 0 1) from measurements performed in the static regime. Analytical expressions of thermal conductance and thermal capacitance versus modulation frequency are compared to measurements of the elevation temperature due to absorbed incoming optical power. The overall good agreement found between measurements and model finally provides the possibility to calculate the bolometric response of thin film bolometers, thus predicting their frequency response for various geometries.

  9. Resistance switching of the interfacial conductance in amorphous SrTiO3 heterostructures

    DEFF Research Database (Denmark)

    Christensen, Dennis; Trier, Felix; Chen, Yunzhong

    Complex oxides have attracted a lot of interest recently as this class of material exhibits a plethora of remarkable properties. In particular, a great variety of properties is observed in the heterostructure composed of lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3). For instance...

  10. Ferroelectric properties of NaNbO3-BaTiO3 thin films deposited on SrRuO3/(001)SrTiO3 substrate by pulsed laser deposition

    International Nuclear Information System (INIS)

    Yamazoe, Seiji; Oda, Shinya; Sakurai, Hiroyuki; Wada, Takahiro; Adachi, Hideaki

    2009-01-01

    (NaNbO 3 ) 1-x (BaTiO 3 ) x (NN-xBT) thin films with low BaTiO 3 (BT) concentrations x (x=0.05 and 0.10) were fabricated on SrRuO 3 /(001)SrTiO 3 (SRO)/(001)STO) substrate by pulsed laser deposition (PLD). X-ray diffraction pattern (XRD) and transmission electron diffraction pattern (TED) showed that NN-0.10BT thin film was epitaxially grown on SRO/(001)STO substrate with a crystallographic relationship of [001] NN-xBT parallel [001] STO . From reciprocal space maps, the lattice parameters of the out-of-plane direction of NN-xBT thin films became larger with an increase in BT concentration, although the lattice parameter of the in-plane was hardly changed by the BT concentration. The value of relative dielectric constant ε r of the NN-xBT thin films were increased with BT concentration. The ε r and the dielectric loss tanδ of NN-0.10BT were 1220 and 0.02 at 1 kHz, respectively. The P-E hysteresis loops of the NN-xBT thin films showed clear ferroelectricity. Although the value of remanent polarization P r decreased with the BT concentration, the behaviors of ε r , P r , and coercive electric field E c of the NN-xBT thin films against the BT concentration accorded with those of NN-xBT ceramics, in which NN-0.10BT ceramics exhibited the largest piezoelectric property. Therefore, the NN-0.10BT thin film is expected to show high piezoelectricity. (author)

  11. Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

    International Nuclear Information System (INIS)

    Xiong Zhengwei; Sun Weiguo; Wang Xuemin; Jiang Fan; Wu Weidong

    2012-01-01

    Highlights: ► The BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs were successfully fabricated by L-MBE. ► The influence with the various concentrations of Ni nanocrystals embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. ► The BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss compared with the pure BaTiO 3 /SrTiO 3 superlattices. ► The dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory. - Abstract: The self-organized Ni nanocrystals (NCs) were embedded in BaTiO 3 /SrTiO 3 superlattices using laser molecular beam epitaxy (L-MBE). The stress of the composite films was increased with the increasing concentration of embedded Ni NCs, as investigation in stress calculation. The influence with the various concentrations of Ni NCs embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. The internal stress of the films was too strong to epitaxial growth of BaTiO 3 /SrTiO 3 superlattices. Compared with the pure BaTiO 3 /SrTiO 3 superlattices, the BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss. Furthermore, the dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory.

  12. Characterization of three-dimensional grain boundary topography in a YBa2Cu3O7-d thin film bicrystal grown on a SrTiO3 substrate

    International Nuclear Information System (INIS)

    Ayache, J.; Thorel, A.; Lesueur, J.; Dahmen, U.

    1998-01-01

    The topography and crystallography of YBa 2 Cu 3 O 7-d (YBCO) bicrystal films grown epitaxially on oriented SrTiO 3 (STO) bicrystals have been characterized by scanning and transmission electron microscopies (SEM and TEM) and atomic force microscopy (AFM). The YBCO films were formed by laser ablation on melt-grown Σ13 STO bicrystals with a misorientation of 24 degree around the left-angle 001 right-angle tilt axis. In agreement with previous reports, TEM analysis revealed that the grain boundary in the film did not always follow the planar substrate grain boundary faithfully, but undulated about the average boundary plane. High resolution electron microscopy observations of the apparently complex undulating boundary structures could be explained as a result of an overlap between different orientation variants of the orthorhombic YBCO film. Cross correlation between SEM, AFM, and TEM imaging gave a clear evidence that an island growth mechanism is responsible for the observed grain boundary structure and morphology for which a schematic model is presented. It is seen that meandering of the YBCO grain boundary (GB) is necessarily coupled to a wide range of inclination of the GB plane in the z direction. The implications of this interfacial structure for the behavior of GB based Josephson junctions are discussed and compared to models proposed in the literature. It is also seen that inclination of the GB may be responsible for the poor correlation usually found in the literature between calculations and experimental curves of current density J c versus the GB angle since the most elaborate models proposed up to now take into account only pure tilt GB plane facets, that is to say facets in the zone of the tilt axis. Moreover, such a GB structure may affect the interpretation of recent phase sensitive experiments done on bicrystal or tricrystal high T c superconductors to determine the symmetry of the order parameter. copyright 1998 American Institute of Physics

  13. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  14. Effect of crystal structure on strontium titanate thin films and their dielectric properties

    Science.gov (United States)

    Kampangkeaw, Satreerat

    Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible

  15. Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2009-05-01

    We report the effects of Ba, Ti, and Mn dopants on ferroelectric polarization and leakage current of (K0.44Na0.52Li0.04)(Nb0.84Ta0.1Sb0.06)O3 (KNN-LT-LS) thin films deposited by pulsed laser deposition. It is shown that donor dopants such as Ba2+, which increased the resistivity in bulk KNN-LT-LS, had an opposite effect in the thin film. Ti4+ as an acceptor B-site dopant reduces the leakage current by an order of magnitude, while the polarization values showed a slight degradation. Mn4+, however, was found to effectively suppress the leakage current by over two orders of magnitude while enhancing the polarization, with 15 and 23 μC/cm2 remanent and saturated polarization, whose values are ˜70% and 82% of the reported values for bulk composition. This phenomenon has been associated with the dual effect of Mn4+ in KNN-LT-LS thin film, by substituting both A- and B-site cations. A detailed description on how each dopant affects the concentrations of vacancies in the lattice is presented. Mn-doped KNN-LT-LS thin films are shown to be a promising candidate for lead-free thin films and applications.

  16. Optical Properties of Nitrogen-Substituted Strontium Titanate Thin Films Prepared by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alexander Wokaun

    2009-09-01

    Full Text Available Perovskite-type N-substituted SrTiO3 thin films with a preferential (001 orientation were grown by pulsed laser deposition on (001-oriented MgO and LaAlO3 substrates. Application of N2 or ammonia using a synchronized reactive gas pulse produces SrTiO3-x:Nx films with a nitrogen content of up to 4.1 at.% if prepared with the NH3 gas pulse at a substrate temperature of 720 °C. Incorporating nitrogen in SrTiO3 results in an optical absorption at 370-460 nm associated with localized N(2p orbitals. The estimated energy of these levels is ≈2.7 eV below the conduction band. In addition, the optical absorption increases gradually with increasing nitrogen content.

  17. Positron annihilation studies on the behaviour of vacancies in LaAlO3/SrTiO3 heterostructures

    Science.gov (United States)

    Yuan, Guoliang; Li, Chen; Yin, Jiang; Liu, Zhiguo; Wu, Di; Uedono, Akira

    2012-11-01

    The formation and diffusion of vacancies are studied in LaAlO3/SrTiO3 heterostructures. Oxygen vacancies (VOS) appear easily in the SrTiO3 substrate during LaAlO3 film growth at 700 °C and 10-4 Pa oxygen pressure rather than at 10-3-10-1 Pa, thus the latter two-dimensional electron gas should come from the polarity discontinuity at the (LaO)+/(TiO2)0 interface. For SrTiO3-δ/LaAlO3/SrTiO3, high-density VOS of the SrTiO3-δ film can pass through the LaAlO3 film and then diffuse to 1.7 µm depth in the SrTiO3 substrate, suggesting that LaAlO3 has VOS at its middle-deep energy levels within the band gap. Moreover, high-density VOS may combine with a strontium/titanium vacancy (VSr/Ti) to form VSr/Ti-O complexes in the SrTiO3 substrate at 700 °C.

  18. Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Stamate, Eugen; Pryds, Nini

    2011-01-01

    When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely...

  19. The synthesis of SrTiO3 nanocubes and the analysis of nearly ideal diode application of Ni/SrTiO3 nanocubes/n-Si heterojunctions

    Science.gov (United States)

    Bilal Taşyürek, Lütfi; Sevim, Melike; Çaldıran, Zakir; Aydogan, Sakir; Metin, Önder

    2018-01-01

    A perovskite type of strontium titanate (SrTiO3) nanocubes (NCs) were synthesized by using a hydrothermal process and the thin films of these NCs were deposited on an n-type silicon wafer by spin coating technique. As-synthesized SrTiO3 NCs were characterized by transmission electron microscope, scanning electron microscope, energy dispersive x-ray, x-ray diffraction and Raman spectroscopy. After evaporation of 12 Ni dots on the SrTiO3 NCs thin films deposited on n-Si, the Ni/SrTiO3 NCs/n-Si heterojunction devices were fabricated for the first time. The ideality factors of the twelve fabricated devices were vary from 1.05 to 1.22 and the barrier height values varied from 0.64 to 0.68 eV. Furthermore, since all devices yielded similar characteristics, only the current-voltage and the capacitance-voltage of one selected device (named H1) were investigated in detailed. The series resistance of this device was calculated as 96 Ω.

  20. Resistive switching phenomena of extended defects in Nb-doped SrTiO3 under influence of external gradients

    International Nuclear Information System (INIS)

    Rodenbuecher, Christian

    2014-01-01

    Redox-based memristive materials have attracted much attention in the last decade owing to their ability to change the resistance upon application of an electric field making them promising candidates for future non-volatile memories. However, a fundamental understanding of the nature of the resistive switching effect, which is indispensable for designing future technological applications,is still lacking. As a prototype material of a memristive oxide, strontium titanate (SrTiO 3 ) has been investigated intensively and it was revealed that the valence change of a Ti ''d'' electron plays an important role during resistive switching related to insulator-to-metal transition. Such a transition can be induced by electrical gradients, by chemical gradients, by a combination of these gradients or by donor doping. Hence, SrTiO 3 doped with the donor Nb should have metallic properties and is used commonly as a conducting substrate for the growth of functional oxide thin films. Nevertheless,the resistive switching effect has also be observed in Nb-doped SrTiO 3 . This paradoxical situation offers a unique opportunity to gain an insight into the processes during the insulator-to metal transition. In this thesis, a comprehensive study of the influence of external gradients on SrTiO 3 :Nb single crystals is presented. The focus is especially set on the investigation of the crystallographic structure, the chemical composition, the electronic structure, the lattice dynamics and the electronic transport phenomena using surface-sensitive methods on the macro- and nanoscale. On the as-received epi-polished single crystals, the evolution of a surface layer having a slight excess of strontium and - in contrast to the bulk of the material - semiconducting properties are observed. Hence, the key for understanding of the resistive switching effect is the knowledge of the nature of the surface layer. On the basis of systematic studies of the influence of external

  1. Resistance change effect in SrTiO3/Si (001) isotype heterojunction

    Science.gov (United States)

    Huang, Xiushi; Gao, Zhaomeng; Li, Pei; Wang, Longfei; Liu, Xiansheng; Zhang, Weifeng; Guo, Haizhong

    2018-02-01

    Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.

  2. Lanthanoid titanate film structure deposited at different temperatures in vacuum

    International Nuclear Information System (INIS)

    Kushkov, V.D.; Zaslavskij, A.M.; Mel'nikov, A.V.; Zverlin, A.V.; Slivinskaya, A.Eh.

    1991-01-01

    Influence of deposition temperature on the structure of lanthanoid titanate films, prepared by the method of high-rate vacuum condensation. It is shown that formation of crystal structure, close to equilibrium samples, proceeds at 1100-1300 deg C deposition temperatures. Increase of temperature in this range promotes formation of films with higher degree of structural perfection. Amorphous films of lanthanoid titanates form at 200-1000 deg C. Deposition temperature shouldn't exceed 1400 deg C to prevent the formation of perovskite like phases in films

  3. Resistance switching at the interface of LaAlO3/SrTiO3

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Zhao, J.L.; Sun, J.R.

    2010-01-01

    At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching ...

  4. Phase transition in lead titanate thin films: a Brillouin study

    International Nuclear Information System (INIS)

    Kuzel, P; Dugautier, C; Moch, P; Marrec, F Le; Karkut, M G

    2002-01-01

    The elastic properties of both polycrystalline and epitaxial PbTiO 3 (PTO) thin films are studied using Brillouin scattering spectroscopy. The epitaxial PTO films were prepared by pulsed laser ablation on (1) a [0 0 1] single crystal of SrTiO 3 (STO) doped with Nb and (2) a [0 0 1] STO buffered with a layer of YBa 2 Cu 3 O 7 . The polycrystalline PTO films were prepared by sol-gel on a Si substrate buffered with TiO 2 and Pt layers. The data analysis takes into account the ripple and the elasto-optic contributions. The latter significantly affects the measured spectra since it gives rise to a Love mode in the p-s scattering geometry. At room temperature, the spectra of the epitaxially grown samples are interpreted using previously published elastic constants of PTO single crystals. Sol-gel samples exhibit appreciable softening of the effective elastic properties compared to PTO single crystals: this result is explained by taking into account the random orientation of the microscopic PTO grains. For both the polycrystalline and the epitaxial films we have determined that the piezoelectric terms do not contribute to the spectra. The temperature dependence of the spectra shows strong anomalies of the elastic properties near the ferroelectric phase transition. Compared to the bulk, T C is higher in the sol-gel films, while in the epitaxial films the sign of the T C shift depends on the underlying material

  5. Barium titanate thick films prepared by screen printing technique

    Directory of Open Access Journals (Sweden)

    Mirjana M. Vijatović

    2010-06-01

    Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

  6. Crystal structure of red lead titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bursill, L.A.; Peng, J.L.; Jiang, B. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Li, X. [Jilin Univ., Changchun, JL (China). Dept of Chemistry

    1998-09-01

    Orange-red lead titanate thin films are examined by high-resolution transmission electron microscopy and diffraction. It is remarkable that the structure is based on that of tetragonal-tungsten-bronze (TTB) rather than perovskite-type. The chemical basis for this result is examined. It is deduced that the TTB structure is stabilized by inclusion of hydroxyl ions during synthesis by a sol-gel route involving hydrolysis of n-Butyl titanate 7 refs., 1 tab., 4 figs.

  7. Crystal structure of red lead titanate thin films

    International Nuclear Information System (INIS)

    Bursill, L.A.; Peng, J.L.; Jiang, B.; Li, X.

    1998-01-01

    Orange-red lead titanate thin films are examined by high-resolution transmission electron microscopy and diffraction. It is remarkable that the structure is based on that of tetragonal-tungsten-bronze (TTB) rather than perovskite-type. The chemical basis for this result is examined. It is deduced that the TTB structure is stabilized by inclusion of hydroxyl ions during synthesis by a sol-gel route involving hydrolysis of n-Butyl titanate

  8. Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO3

    International Nuclear Information System (INIS)

    Schie, Marcel; Marchewka, Astrid; Waser, Rainer; Müller, Thomas; De Souza, Roger A

    2012-01-01

    A classical force-field model with partial ionic charges was applied to study the behaviour of oxygen vacancies in the perovskite oxide strontium titanate (SrTiO 3 ). The dynamical behaviour of these point defects was investigated as a function of temperature and defect concentration by means of molecular dynamics (MD) simulations. The interaction between oxygen vacancies and an extended defect, here a Σ3(111) grain boundary, was also examined by means of MD simulations. Analysis of the vacancy distribution revealed considerable accumulation of vacancies in the envelope of the grain boundary. The possible clustering of oxygen vacancies in bulk SrTiO 3 was studied by means of static lattice calculations within the Mott-Littleton approach. All binary vacancy-vacancy configurations were found to be energetically unfavourable.

  9. Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO3.

    Science.gov (United States)

    Schie, Marcel; Marchewka, Astrid; Müller, Thomas; De Souza, Roger A; Waser, Rainer

    2012-12-05

    A classical force-field model with partial ionic charges was applied to study the behaviour of oxygen vacancies in the perovskite oxide strontium titanate (SrTiO(3)). The dynamical behaviour of these point defects was investigated as a function of temperature and defect concentration by means of molecular dynamics (MD) simulations. The interaction between oxygen vacancies and an extended defect, here a Σ3(111) grain boundary, was also examined by means of MD simulations. Analysis of the vacancy distribution revealed considerable accumulation of vacancies in the envelope of the grain boundary. The possible clustering of oxygen vacancies in bulk SrTiO(3) was studied by means of static lattice calculations within the Mott-Littleton approach. All binary vacancy-vacancy configurations were found to be energetically unfavourable.

  10. Effect of Sr/Ti Ratio on the Photocatalytic Properties of SrTiO3

    International Nuclear Information System (INIS)

    Sulaeman, U; Yin, S; Sato, T

    2011-01-01

    Since strontium titanate is a wide gap semiconductor, it requires UV light to generate the photocatalytic activities. Modification of strontium titanate to show photocatalytic activity under visible light irradiation is the essential work to efficiently utilize the sun light energy for environmental application. It is expected that the synthesis of SrTiO 3 with variation of Sr/Ti atomic ratio could induce the defect crystals having unique photocatalytic properties. The SrTiO 3 with various Sr/Ti atomic ratios were synthesized by microwave-assisted solvothermal reaction of SrCl 2 .6H 2 O and Ti(OC 3 H 7 ) 4 in KOH aqueous solutions with different atomic ratios of Sr/Ti. The products were characterized by TG-DTA, XRD and DRS. The photocatalytic activity was determined by DeNO x ability using LED lamps with the wavelengths of 627 nm (red), 530 nm (green), 445 nm (blue) and 390 nm (UV). The nanoparticles of perovskite type SrTiO 3 with the particle size of 30-40 nm were successfully synthesized. The visible light responsive photocatalytic activity was generated by adding excess amount of Sr. The photocatalytic activity in visible light could be enhanced by an increase in the Sr/Ti atomic ratio up to 1.25, indicating that the visible light responsive photocatalytic activity is due to the generation of new band gap between the conduction band and valence band of SrTiO 3 by the formation of oxygen vacancy.

  11. Fatigue-resistant epitaxial Pb(Zr,Ti)O3 capacitors on Pt electrode with ultra-thin SrTiO3 template layers

    International Nuclear Information System (INIS)

    Takahara, Seiichi; Morimoto, Akiharu; Kawae, Takeshi; Kumeda, Minoru; Yamada, Satoru; Ohtsubo, Shigeru; Yonezawa, Yasuto

    2008-01-01

    Lead zirconate-titanate Pb(Zr,Ti)O 3 (PZT) capacitors with Pt bottom electrodes were prepared on MgO substrates by pulsed laser deposition (PLD) technique employing SrTiO 3 (STO) template layer. Perovskite PZT thin films are prepared via stoichiometric target using the ultra-thin STO template layers while it is quite difficult to obtain the perovskite PZT on Pt electrode via stoichiometric target in PLD process. The PZT capacitor prepared with the STO template layer showed good hysteresis and leakage current characteristics, and it showed an excellent fatigue resistance. The ultra-thin STO template layers were characterized by angle-resolved X-ray photoelectron spectroscopy measurement. The effect of the STO template layer is discussed based on the viewpoint of the perovskite nucleation and diffusion of Pb and O atoms

  12. Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    Single phase, epitaxial, ⟨001⟩ oriented, undoped and 1mol% Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films of 400nm thickness were synthesized on SrRuO3 coated SrTiO3. Such films exhibit well saturated hysteresis loops and have a spontaneous polarization (Ps) of 10μC /cm2, which is a 150% higher over the Ps of the undoped composition. The coercive field of 1mol% Mn doped films is 13kV/cm. Mn-doping results in three orders of magnitude decrease in leakage current above 50kV/cm electric field, which we attribute to the suppression of intrinsic p-type conductivity of undoped films by Mn donors.

  13. Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-11-01

    Oxygen partial pressure (PO_2) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450nm ⟨001⟩ oriented epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated SrTiO3. Films deposited at 400mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5μC /cm2, respectively, which is ˜100% increase over the ones grown at 100mTorr. The dielectric constant linearly increases from 220 to 450 with increasing PO2. The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.

  14. Antibacterial Properties of Titanate Nano fiber Thin Films Formed on a Titanium Plate

    International Nuclear Information System (INIS)

    Yada, M.; Inoue, Y.; Morita, T.; Torikai, T.; Watari, T.; Noda, I.; Hotokebuchi, T.

    2013-01-01

    A sodium titanate nano fiber thin film and a silver nanoparticle/silver titanate nano fiber thin film formed on the surface of a titanium plate exhibited strong antibacterial activities against methicillin-resistant Staphylococcus aureus, which is one of the major bacteria causing in-hospital infections. Exposure of the sodium titanate nano fiber thin film to ultraviolet rays generated a high antibacterial activity due to photo catalysis and the sodium titanate nano fiber thin film immediately after its synthesis possessed a high antibacterial activity even without exposure to ultraviolet rays. Elution of silver from the silver nanoparticle/silver titanate nano fiber thin film caused by the silver ion exchange reaction was considered to contribute substantially to the strong antibacterial activity. The titanate nano fiber thin films adhered firmly to titanium. Therefore, these titanate nano fiber thin film/titanium composites will be extremely useful as implant materials that have excellent antibacterial activities.

  15. Localized versus itinerant states created by multiple oxygen vacancies in SrTiO3

    Science.gov (United States)

    Jeschke, Harald O.; Shen, Juan; Valentí, Roser

    2015-02-01

    Oxygen vacancies in strontium titanate surfaces (SrTiO3) have been linked to the presence of a two-dimensional electron gas with unique behavior. We perform a detailed density functional theory study of the lattice and electronic structure of SrTiO3 slabs with multiple oxygen vacancies, with a main focus on two vacancies near a titanium dioxide terminated SrTiO3 surface. We conclude based on total energies that the two vacancies preferably inhabit the first two layers, i.e. they cluster vertically, while in the direction parallel to the surface, the vacancies show a weak tendency towards equal spacing. Analysis of the nonmagnetic electronic structure indicates that oxygen defects in the surface TiO2 layer lead to population of Ti {{t}2g} states and thus itinerancy of the electrons donated by the oxygen vacancy. In contrast, electrons from subsurface oxygen vacancies populate Ti eg states and remain localized on the two Ti ions neighboring the vacancy. We find that both the formation of a bound oxygen-vacancy state composed of hybridized Ti 3eg and 4p states neighboring the oxygen vacancy as well as the elastic deformation after extracting oxygen contribute to the stabilization of the in-gap state.

  16. Fabrication and properties of yttrium doped barium titanate film by RF sputtering

    International Nuclear Information System (INIS)

    Igarashi, H.; Yuasa, M.; Okazaki, K.

    1985-01-01

    Semiconductive barium titanate films were fabricated by RF sputtering on fused quartz, alumina and barium titanate ceramic substrates using barium titanate ceramic with a small amount of yttria as a target. The films on the barium titanate substrates turned blue color and showed a small PTC effect by heat-treating at 1000 0 C in the air after deposition at the substrate temperature of 600 0 C

  17. Metastable honeycomb SrTiO_3/SrIrO_3 heterostructures

    International Nuclear Information System (INIS)

    Anderson, T. J.; Ryu, S.; Podkaminer, J. P.; Ma, Y.; Eom, C. B.; Zhou, H.; Xie, L.; Irwin, J.; Rzchowski, M. S.; Pan, X. Q.

    2016-01-01

    Recent theory predictions of exotic band topologies in (111) honeycomb perovskite SrIrO_3 layers sandwiched between SrTiO_3 have garnered much attention in the condensed matter physics and materials communities. However, perovskite SrIrO_3 film growth in the (111) direction remains unreported, as efforts to synthesize pure SrIrO_3 on (111) perovskite substrates have yielded films with monoclinic symmetry rather than the perovskite structure required by theory predictions. In this study, we report the synthesis of ultra-thin metastable perovskite SrIrO_3 films capped with SrTiO_3 grown on (111) SrTiO_3 substrates by pulsed laser deposition. The atomic structure of the ultra-thin films was examined with scanning transmission electron microscopy (STEM), which suggests a perovskite layering distinct from the bulk SrIrO_3 monoclinic phase. In-plane 3-fold symmetry for the entire heterostructure was confirmed using synchrotron surface X-ray diffraction to measure symmetry equivalent crystal truncation rods. Our findings demonstrate the ability to stabilize (111) honeycomb perovskite SrIrO_3, which provides an experimental avenue to probe the phenomena predicted for this material system.

  18. Epitaxial growth of SrTiO3/YBa2Cu3O7 - x heterostructures by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Liang, S.; Chern, C. S.; Shi, Z. Q.; Lu, P.; Safari, A.; Lu, Y.; Kear, B. H.; Hou, S. Y.

    1994-06-01

    We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7-x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7-x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1-0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7-x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7-x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7-x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10-6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.

  19. Integrated oxygen sensors based on Mg-doped SrTiO3 fabricated by screen-printing

    DEFF Research Database (Denmark)

    Zheng, H.; Toft Sørensen, O.

    1998-01-01

    This paper describes the fabrication and testing of Mg-doped SrTiO3 thick-film oxygen sensors with an integrated Pt heater. The results show that the sensor exhibits a PO2 dependence according to R proportional to PO2-1/4 in the considered PO2 range(2.5 x 10(-5) bar

  20. Electronic structure and topography of annealed SrTiO3(1 1 1) surfaces studied with MIES and STM

    International Nuclear Information System (INIS)

    Goemann, Anissa; Goemann, Karsten; Frerichs, Martin; Kempter, Volker; Borchardt, Guenter; Maus-Friedrichs, Wolfgang

    2005-01-01

    Perovskites of ABO 3 type like strontium titanate (SrTiO 3 ) are of great practical concern as materials for oxygen sensors operating at high temperatures. It is well known that the surface layer shows different properties compared to the bulk. Numerous studies exist for the SrTiO 3 (1 0 0) and (1 1 0) surfaces which have investigated the changes in the electronic structure and topography as a function of the preparation conditions. They have indicated a rather complex behaviour of the surface and the near surface region of SrTiO 3 at elevated temperatures. Up to now, the behaviour of the SrTiO 3 (1 1 1) surfaces under thermal treatment is not sufficiently known. This contribution is intended to work out the relation between alteration of the surface topography with respect to the preparation conditions and the simultaneous changes of the electronic structure. We applied scanning tunneling microscopy (STM) to investigate the surface topography and, additionally, metastable impact electron spectroscopy (MIES) to study the surface electronic structure of reconstructed SrTiO 3 (1 1 1) surfaces. The crystals were heated up to 1000 deg. C under reducing and oxidizing conditions. Both preparation conditions cause strong changes of the surface topography and electronic structure. A microfaceting of the topmost layers is found

  1. Titan

    Science.gov (United States)

    Müller-Wodarg, Ingo; Griffith, Caitlin A.; Lellouch, Emmanuel; Cravens, Thomas E.

    2014-03-01

    Introduction I. C. F. Müller-Wodarg, C. A. Griffith, E. Lellouch and T. E. Cravens; Prologue 1: the genesis of Cassini-Huygens W.-H. Ip, T. Owen and D. Gautier; Prologue 2: building a space flight instrument: a P.I.'s perspective M. Tomasko; 1. The origin and evolution of Titan G. Tobie, J. I. Lunine, J. Monteux, O. Mousis and F. Nimmo; 2. Titan's surface geology O. Aharonson, A. G. Hayes, P. O. Hayne, R. M. Lopes, A. Lucas and J. T. Perron; 3. Thermal structure of Titan's troposphere and middle atmosphere F. M. Flasar, R. K. Achterberg and P. J. Schinder; 4. The general circulation of Titan's lower and middle atmosphere S. Lebonnois, F. M. Flasar, T. Tokano and C. E. Newman; 5. The composition of Titan's atmosphere B. Bézard, R. V. Yelle and C. A. Nixon; 6. Storms, clouds, and weather C. A. Griffith, S. Rafkin, P. Rannou and C. P. McKay; 7. Chemistry of Titan's atmosphere V. Vuitton, O. Dutuit, M. A. Smith and N. Balucani; 8. Titan's haze R. West, P. Lavvas, C. Anderson and H. Imanaka; 9. Titan's upper atmosphere: thermal structure, dynamics, and energetics R. V. Yelle and I. C. F. Müller-Wodarg; 10. Titan's upper atmosphere/exosphere, escape processes, and rates D. F. Strobel and J. Cui; 11. Titan's ionosphere M. Galand, A. J. Coates, T. E. Cravens and J.-E. Wahlund; 12. Titan's magnetospheric and plasma environment J.-E. Wahlund, R. Modolo, C. Bertucci and A. J. Coates.

  2. Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Robert Mamazza

    2012-04-01

    Full Text Available New apparatus and a new process for the sputter deposition of modified barium titanate thin-films were developed. Films were deposited at temperatures up to 900 °C from a Ba0.96Ca0.04Ti0.82Zr0.18O3 (BCZTO target directly onto Si, Ni and Pt surfaces and characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and X-ray photoelectron spectroscopy (XPS. Film texture and crystallinity were found to depend on both deposition temperature and substrate: above 600 °C, the as-deposited films consisted of well-facetted crystallites with the cubic perovskite structure. A strongly textured Pt (111 underlayer enhanced the (001 orientation of BCZTO films deposited at 900 °C, 10 mtorr pressure and 10% oxygen in argon. Similar films deposited onto a Pt (111 textured film at 700 °C and directly onto (100 Si wafers showed relatively larger (011 and diminished intensity (00ℓ diffraction peaks. Sputter ambients containing oxygen caused the Ni underlayers to oxidize even at 700 °C: Raising the process temperature produced more diffraction peaks of NiO with increased intensities. Thin-film capacitors were fabricated using ~500 nm thick BCZTO dielectrics and both Pt and Ni top and bottom electrodes. Small signal capacitance measurements were carried out to determine capacitance and parallel resistance at low frequencies and from these data, the relative permittivity (er and resistivity (r of the dielectric films were calculated; values ranged from ~50 to >2,000, and from ~104 to ~1010 Ω∙cm, respectively.

  3. Characteristics of (Ti,Ta)N thin films prepared by using pulsed high energy density plasma

    Energy Technology Data Exchange (ETDEWEB)

    Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Li Li [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Lv Guohua [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang Xianhui [College of Science, Changchun University of Science and Technology, Changchun 130022, Jilin Province (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

    2007-07-21

    (Ti,Ta)N films were prepared by pulsed high energy density plasma (PHEDP) from a coaxial gun in N{sub 2} gas. The coaxial gun is composed of a tantalum inner electrode and a titanium outer one. Material characteristics of the (Ti,Ta)N film were investigated by x-ray photoelectron spectroscopy and x-ray diffraction. The microstructure of the film was observed by a scanning electron microscope. The elemental composition and the interface of the film/substrate were analysed using Auger electron spectrometry. Our results suggest that the binary metal nitride film (Ti,Ta)N, can be prepared by PHEDP. It also shows that dense nanocrystalline (Ti,Ta)N film can be achieved.

  4. Interface properties of SrTiO3-based heterostructures studied by spectroscopy and high-resolution microscopy

    International Nuclear Information System (INIS)

    Pfaff, Florian Georg

    2017-01-01

    carrier concentration as well as the 2DES spatial extension can be observed for samples grown at very low oxygen pressures, which is related to the creation of oxygen vacancies in SrTiO 3 substrate. It is microscopically shown for the first time that sharp interfaces with a very low density of defects can also be grown at very low oxygen partial pressures. In addition, no significant effect of oxygen vacancies on specific structural properties is seen. Furthermore, a detailed analysis of the atomic spacing reveales a lattice distortion within the LaAlO 3 film which shows a significant dependence on the used growth parameters and, supported by density functional theory, points towards a complex interplay of electronic reconstruction, surface oxygen vacancies and lattice distortions as the driving mechanism for the 2DES formation. Beside the study of the structural properties of the interface in LaAlO 3 /SrTiO 3 heterostructures by means of transmission electron microscopy, the electronic structure of the 2DES is analyzed by resonant inelastic X-ray scattering (RIXS) measurements which show clear indications for localized charge carriers below the critical thickness for conductivity of four unit cells. Moreover, a Raman- and a fluorescence-like signal can be identified by excitation energy dependent RIXS and attributed to the electronic character of the intermediate state. Similar results are obtained on γ-Al 2 O 3 /SrTiO 3 heterostructures which fortifies this interpretation and could be a hint for a similar ground state in both heterostructures and interface magnetism also to be present in this system. By using resonant photoelectron spectroscopy the Ti 3d valence electrons can directly be observed and analyzed. Comparative measurements on LaAlO 3 /SrTiO 3 and γ-Al 2 O 3 /SrTiO 3 indicate the existence of different types of electronic states with Ti 3d character in both systems which can be attributed to mobile carriers forming the 2DES and carriers localized in states

  5. Control of growth mode in SrTiO3 homoepitaxy under 500 deg. C

    International Nuclear Information System (INIS)

    Li Yanrong; Li Jinlong; Zhang Ying; Wei Xianhua; Deng Xinwu; Liu Xingzhao

    2004-01-01

    Homoepitaxial SrTiO 3 thin films were grown by laser molecular beam epitaxy. The growth mode was determined by in-situ reflective high energy electron diffraction, and the surface of the films was studied by ex-situ atomic force microscopy. At the deposition rate of 0.16A ring /sec and the laser energy density of 6J/cm 2 , layer-by-layer growth was observed above 460 deg. C substrate temperature, while the Stranski-Krastanov growth mode, that is layer-by-layer growth plus island growth mode, prevailed between 460 deg. C and 410 deg. C. On further decreasing the substrate temperature, the island growth was determined under 410 deg. C. With the optimization of deposition process in terms of laser energy density and deposition rate, the lowest crystallization temperatures of SrTiO 3 films grown in layer-by-layer growth mode were obtained as low as 280 deg. C. The effects of laser energy density on growth temperature were studied

  6. Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

    International Nuclear Information System (INIS)

    Zapata-Navarro, A.; Marquez-Herrera, A.; Cruz-Jauregui, M.P.; Calzada, M.L.

    2005-01-01

    In this work, we present the variation of the ferroelectric properties of Ba 1-x Sr x TiO 3 films deposited on Pt/TiO 2 /SiO 2 /Si substrates by RF co-sputtering with 0≤x≤1. The co-sputtering was done using a single magnetron with BaTiO 3 /SrTiO 3 targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Titan!

    Science.gov (United States)

    Matson, Dennis L.

    2010-05-01

    Cassini-Huygens achieved Saturnian orbit on July 1, 2004. The first order of business was the safe delivery of the Huygens atmospheric probe to Titan that took place on January 14, 2005. Huygens descended under parachute obtaining observations all the way down to a safe landing. It revealed Titan for the first time. Stunning are the similarities between Titan and the Earth. Viewing the lakes and seas, the fluvial terrain, the sand dunes and other features through the hazy, nitrogen atmosphere, brings to mind the geological processes that created analogous features on the Earth. On Titan frozen water plays the geological role of rock; liquid methane takes the role of terrestrial water. The atmospheres of both Earth and Titan are predominately nitrogen gas. Titan's atmosphere contains 1.5% methane and no oxygen. The surface pressure on Titan is 1.5 times the Earth's. There are aerosol layers and clouds that come and go. Now, as Saturn proceeds along its solar orbit, the seasons are changing. The effects upon the transport of methane are starting to be seen. A large lake in the South Polar Region seems to be filling more as winter onsets. Will the size and number of the lakes in the South grow during winter? Will the northern lakes and seas diminish or dry up as northern summer progresses? How will the atmospheric circulation change? Much work remains not only for Cassini but also for future missions. Titan has many different environments to explore. These require more capable instruments and in situ probes. This work was conducted at the Jet Propulsion Laboratory, California Institute of Technology under contract with the National Aeronautics and Space Administration.

  8. Mechanisms of charge transfer and redistribution in LaAlO3/SrTiO3 revealed by high-energy optical conductivity.

    Science.gov (United States)

    Asmara, T C; Annadi, A; Santoso, I; Gogoi, P K; Kotlov, A; Omer, H M; Motapothula, M; Breese, M B H; Rübhausen, M; Venkatesan, T; Ariando; Rusydi, A

    2014-04-14

    In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on nonpolar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5e(-) from the LaAlO3 film into the LaAlO3/SrTiO3 interface is expected. Here we show that in conducting samples (≥ 4 unit cells of LaAlO3) there is indeed a ~0.5e(-) transfer from LaAlO3 into the LaAlO3/SrTiO3 interface by studying the optical conductivity in a broad energy range (0.5-35 eV). Surprisingly, in insulating samples (≤ 3 unit cells of LaAlO3) a redistribution of charges within the polar LaAlO3 sublayers (from AlO2 to LaO) as large as ~0.5e(-) is observed, with no charge transfer into the interface. Hence, our results reveal the different mechanisms for the polarization catastrophe compensation in insulating and conducting LaAlO3/SrTiO3 interfaces.

  9. Integrated oxygen sensors based on Mg-doped SrTiO3 fabricated by screen-printing

    DEFF Research Database (Denmark)

    Zheng, H.; Sørensen, Ole Toft

    2000-01-01

    This paper describes the fabrication and testing of Mg-doped SrTiO3 thick-film oxygen sensors with an integrated Pt heater. The results show that the sensor exhibits a P-o2 dependence according to R proportional to p(o2)(-1/4) in the considered P-o2 range(2.5 x 10(-5) bar

  10. Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

    KAUST Repository

    Yao, Yingbang; Chen, Long; Wang, Zhihong; Alshareef, Husam N.; Zhang, Xixiang

    2012-01-01

    on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.

  11. Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes

    Science.gov (United States)

    Ahmed, Moinuddin; Butler, Donald P.

    2015-07-01

    Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.

  12. Electronic properties and surface reactivity of SrO-terminated SrTiO3 and SrO-terminated iron-doped SrTiO3.

    Science.gov (United States)

    Staykov, Aleksandar; Tellez, Helena; Druce, John; Wu, Ji; Ishihara, Tatsumi; Kilner, John

    2018-01-01

    Surface reactivity and near-surface electronic properties of SrO-terminated SrTiO 3 and iron doped SrTiO 3 were studied with first principle methods. We have investigated the density of states (DOS) of bulk SrTiO 3 and compared it to DOS of iron-doped SrTiO 3 with different oxidation states of iron corresponding to varying oxygen vacancy content within the bulk material. The obtained bulk DOS was compared to near-surface DOS, i.e. surface states, for both SrO-terminated surface of SrTiO 3 and iron-doped SrTiO 3 . Electron density plots and electron density distribution through the entire slab models were investigated in order to understand the origin of surface electrons that can participate in oxygen reduction reaction. Furthermore, we have compared oxygen reduction reactions at elevated temperatures for SrO surfaces with and without oxygen vacancies. Our calculations demonstrate that the conduction band, which is formed mainly by the d-states of Ti, and Fe-induced states within the band gap of SrTiO 3 , are accessible only on TiO 2 terminated SrTiO 3 surface while the SrO-terminated surface introduces a tunneling barrier for the electrons populating the conductance band. First principle molecular dynamics demonstrated that at elevated temperatures the surface oxygen vacancies are essential for the oxygen reduction reaction.

  13. Physics of SrTiO3-based heterostructures and nanostructures: a review.

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2017-08-30

    1 Overview 1 1.1 Introduction 1 1.1.1 Oxide growth techniques are rooted in search for high-Tc superconductors 2 1.1.2 First reports of interface conductivity 2 1.2 2D physics 2 1.3 Emergent properties of oxide heterostructures and nanostructures 3 1.4 Outline 3 2 Relevant properties of SrTiO3 3 2.1 Structural properties and transitions 3 2.2 Ferroelectricity, Paraelectricity and Quantum Paraelectricity 4 2.3 Electronic structure 5 2.4 Defects 6 2.4.1 Oxygen vacancies 6 2.4.2 Terraces 7 2.5 Superconductivity 7 3 SrTiO3-based heterostructures and nanostructures 8 3.1 Varieties of heterostructures 8 3.1.1 SrTiO3 only 9 3.1.2 LaAlO3/SrTiO3 9 3.1.3 Other heterostructures formed with SrTiO3 10 3.2 Thin-film growth 10 3.2.1 Substrates 10 3.2.2 SrTiO3 surface treatment 11 3.2.3 Pulsed Laser Deposition 11 3.2.4 Atomic Layer Deposition 13 3.2.5 Molecular Beam Epitaxy 14 3.2.6 Sputtering 15 3.3 Device Fabrication 15 3.3.1 "Conventional" photolithography - Thickness Modulation, hard masks, etc. 15 3.3.2 Ion beam irradiation 16 3.3.3 Conductive-AFM lithography 16 4 Properties and phase diagram of LaAlO3/SrTiO3 16 4.1 Insulating state 16 4.2 Conducting state 17 4.2.1 Confinement thickness (the depth profile of the 2DEG) 17 4.3 Metal-insulator transition and critical thickness 18 4.3.1 Polar catastrophe ( electronic reconstruction) 18 4.3.2 Oxygen Vacancies 19 4.3.3 Interdiffusion 20 4.3.4 Polar Interdiffusion + oxygen vacancies + antisite pairs 20 4.3.5 Role of surface adsorbates 21 4.3.6 Hidden FE like distortion - Strain induced instability 21 4.4 Structural properties and transitions 21 4.5 Electronic band structure 22 4.5.1 Theory 22 4.5.2 Experiment 23 4.5.3 Lifshitz transition 24 4.6 Defects, doping, and compensation 25 4.7 Magnetism 25 4.7.1 Experimental evidence 25 4.7.2 Two types of magnetism 27 4.7.3 Ferromagnetism 27 4.7.4 Metamagnetism 28 4.8 Superconductivity 28 4.9 Optical properties 29 4.9.1 Photoluminesce

  14. Octahedral rotations in strained LaAlO3/SrTiO3 (001 heterostructures

    Directory of Open Access Journals (Sweden)

    T. T. Fister

    2014-02-01

    Full Text Available Many complex oxides display an array of structural instabilities often tied to altered electronic behavior. For oxide heterostructures, several different interfacial effects can dramatically change the nature of these instabilities. Here, we investigate LaAlO3/SrTiO3 (001 heterostructures using synchrotron x-ray scattering. We find that when cooling from high temperature, LaAlO3 transforms from the Pm3¯m to the Imma phase due to strain. Furthermore, the first 4 unit cells of the film adjacent to the substrate exhibit a gradient in rotation angle that can couple with polar displacements in films thinner than that necessary for 2D electron gas formation.

  15. High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

    KAUST Repository

    Sarath Kumar, S. R.

    2013-08-14

    We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

  16. High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

    KAUST Repository

    Sarath Kumar, S. R.; Barasheed, Abeer Z.; Alshareef, Husam N.

    2013-01-01

    We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

  17. Structural and optical investigations of sol–gel derived lithium titanate thin films

    International Nuclear Information System (INIS)

    Łapiński, M.; Kościelska, B.; Sadowski, W.

    2012-01-01

    Highlights: ► Lithium titanate thin films were deposited on glass substrates by sol–gel method. ► After annealing at 550 °C samples had lithium titanate spinel structure. ► Above 80 h of annealing mixture of lithium titanate and titanium oxides was appeared. ► Optical transmittance decreased with increasing of annealing time. - Abstract: In this paper structural and optical studies of lithium titanate (LTO) thin films are presented. Nanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible lithium titanate phase was obtained after 20 h annealing. Increasing of annealing time over 20 h revealed appearance of titanium oxides phase. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength with increasing of annealing time. The optical band gap was calculated for direct allowed and indirect allowed transitions from optical absorption spectra.

  18. Crystallinity and electrical properties of neodymium-substituted bismuth titanate thin films

    International Nuclear Information System (INIS)

    Chen, Y.-C.; Hsiung, C.-P.; Chen, C.-Y.; Gan, J.-Y.; Sun, Y.-M.; Lin, C.-P.

    2006-01-01

    We report on the properties of Nd-substituted bismuth titanate Bi 4-x Nd x Ti 3 O 12 (BNdT) thin films for ferroelectric non-volatile memory applications. The Nd-substituted bismuth titanate thin films fabricated by modified chemical solution deposition technique showed much improved properties compared to pure bismuth titanate. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 640 deg. C and grain size was found to be considerably increased as the annealing temperature increased. The film properties were found to be strongly dependent on the Nd content and annealing temperatures. The measured dielectric constant of BNdT thin films was in the range 172-130 for Bi 4-x Nd x Ti 3 O 12 with x 0.0-0.75. Ferroelectric properties of Nd-substituted bismuth titanate thin films were significantly improved compared to pure bismuth titanate. For example, the observed 2P r and E c for Bi 3.25 Nd 0.75 Ti 3 O 12 , annealed at 680 deg. C, were 38 μC/cm 2 and 98 kV/cm, respectively. The improved microstructural and ferroelectric properties of BNdT thin films suggest their suitability for high density ferroelectric random access memory applications

  19. LCAO calculations of SrTiO3 nanotubes

    International Nuclear Information System (INIS)

    Evarestov, Robert; Bandura, Andrei

    2011-01-01

    The large-scale first-principles simulation of the structure and stability of SrTiO 3 nanotubes is performed for the first time using the periodic PBE0 LCAO method. The initial structures of the nanotubes have been obtained by the rolling up of the stoichiometric SrTiO 3 slabs consisting of two or four alternating (001) SrO and TiO 2 atomic planes. Nanotubes (NTs) with chiralities (n,0) and (n,n) have been studied. Two different NTs were constructed for each chirality: (I) with SrO outer shell, and (II) with TiO 2 outer shell. Positions of all atoms have been optimized to obtain the most stable NT structure . In the majority of considered cases the inner or outer TiO 2 shells of NT undergo a considerable reconstruction due to shrinkage or stretching of interatomic distances in the initial cubic perovskite structure. There were found two types of surface reconstruction: (1) breaking of Ti-O bonds with creating of Ti = O titanyl groups in outer surface; (2) inner surface folding due to Ti-O-Ti bending. Based on strain energy calculations the largest stability was found for (n,0) NTs with TiO 2 outer shell.

  20. Anion and cation diffusion in barium titanate and strontium titanate

    International Nuclear Information System (INIS)

    Kessel, Markus Franz

    2012-01-01

    data suggests that oxygen vacancies and electron holes play the key role in the formation of the equilibrium surface space-charge layers. The oxygen vacancy diffusivities and the oxygen vacancy migration enthalpy are compared to other experimentally and theoretically derived data for barium titanate and a global expression for the temperature dependence of the oxygen vacancy diffusivity is determined. The latter was used for a comparison of the oxygen vacancy diffusivity and the oxygen vacancy migration enthalpy for BaTiO 3 to other perovskite oxides. Furthermore, this work shows results from cation interdiffusion experiments between BaZrO 3 and SrTiO 3 . Thin films of barium zirconate were deposited on strontium titanate single crystals and the cation interdiffusion investigated as a function of temperature. All four cations show a main diffusion profile and an additional fast diffusion profile. Each main diffusion profile can be described independently by the thick-film solution of the diffusion equation suggesting the diffusion coefficients to be concentration independent. The fast diffusion profiles are attributed to fast diffusion of Ba and Zr along dislocations of the SrTiO 3 single crystals and fast diffusion of Sr and Ti along the grain boundaries of the polycrystalline thin-film BaZrO 3 . The migration enthalpies of the bulk profiles for all four cations are very similar. The results suggest a complex diffusion mechanism with coupled diffusion of the cation vacancies on the A and B sites of the perovskite lattice.

  1. Growing LaAlO3/SrTiO3 interfaces by sputter deposition

    Directory of Open Access Journals (Sweden)

    I. M. Dildar

    2015-06-01

    Full Text Available Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

  2. Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures

    Science.gov (United States)

    Groenendijk, D. J.; Manca, N.; Mattoni, G.; Kootstra, L.; Gariglio, S.; Huang, Y.; van Heumen, E.; Caviglia, A. D.

    2016-07-01

    Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices.

  3. Fracture force analysis at the interface of Pd and SrTiO3

    International Nuclear Information System (INIS)

    Nazarpour, S.; Zamani, C.; Cirera, A.

    2009-01-01

    The objective of this work is to develop an experimental indentation based method to determine the fracture force at the interface of Pd thin films and SrTiO 3 perovskite substrate. This paper reports on the results obtained for indentation into Pd thin films which were deposited in various thicknesses from 20 nm to 200 nm under vacuum and 300 deg. C substrate temperature by an electron beam physical vapor deposition. Initially, the relation between grain size, elastic module and hardness was considered as a function of film thickness. Thereafter, in developing new method, oscillating indentation was performed with different applied forces and oscillating times in order to measure the critical fracture force in each thickness. The effect of oscillating time on plastically deformed regions surrounding an indentation was schematically explained in conjunction with variation of oscillating time to determine the interfacial properties of the Pd thin film. Furthermore, the accuracy of the critical fracture force was ensured by applied force versus piling up height plot. The method is validated experimentally for the soft thin films over the hard substrate. However, further study would be essential to measure the film adhesion by means of fracture force at the interface

  4. P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

    Science.gov (United States)

    Man, Hamdi

    Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of

  5. An epitaxial transparent conducting perovskite oxide: double-doped SrTiO3

    NARCIS (Netherlands)

    Ravichandran, Jayakanth; Siemons, W.; Heijmerikx, Herman; Huijben, Mark; Majumdar, Arun; Ramesh, Ramamoorthy

    2010-01-01

    Epitaxial thin films of strontium titanate doped with different concentrations of lanthanum and oxygen vacancies were grown on LSAT substrates by pulsed laser deposition technique. Films grown with 5−15% La doping and a critical growth pressure of 1−10 mTorr showed high transparency (>70−95%) in the

  6. Linear thermal expansion of SrTiO3

    International Nuclear Information System (INIS)

    Tsunekawa, S.; Watanabe, H.F.J.; Takei, H.

    1984-01-01

    The linear thermal expansion of SrTiO 3 in the temperature range 10 to 150 K is measured with a relative accuracy of 5 x 10 -7 by using a three-terminal capacitance dilatometer. The dilation ΔL/L of a single-domain crystal is converted to the ratio of the pseudo-cubic cell constants a(T)/a(T/sub a/) by the equation a(T)/a(T/sub a/) = [1 + (ΔL/L)/sub T/]/[1 + (ΔL/L)/sub T//sub a/], where L is the specimen length, T/sub a/ is the cubic-to-tetragonal transition temperature and T 6 octahedra around the [001] axis. The temperature at which the dilation shows a minimum, 37.5 K, is very close to the transition point T/sub c/ = (32 +- 5) K predicted by Cowley. (author)

  7. Promoting Photocatalytic Overall Water Splitting by Controlled Magnesium Incorporation in SrTiO3 Photocatalysts

    NARCIS (Netherlands)

    Han, Kai; Lin, Yen Chun; Yang, Chia Min; Jong, Ronald; Mul, Guido; Mei, Bastian

    2017-01-01

    SrTiO3 is a well-known photocatalyst inducing overall water splitting when exposed to UV irradiation of wavelengths <370 nm. However, the apparent quantum efficiency of SrTiO3 is typically low, even when functionalized with nanoparticles of Pt or Ni@NiO. Here, we introduce a simple solid-state

  8. Growth and characterization of epitaxial anatase TiO2(001) on SrTiO3-buffered Si(001) using atomic layer deposition

    International Nuclear Information System (INIS)

    McDaniel, M.D.; Posadas, A.; Wang, T.; Demkov, A.A.; Ekerdt, J.G.

    2012-01-01

    Epitaxial anatase titanium dioxide (TiO 2 ) films have been grown by atomic layer deposition (ALD) on Si(001) substrates using a strontium titanate (STO) buffer layer grown by molecular beam epitaxy (MBE) to serve as a surface template. The growth of TiO 2 was achieved using titanium isopropoxide and water as the co-reactants at a substrate temperature of 225–250 °C. To preserve the quality of the MBE-grown STO, the samples were transferred in-situ from the MBE chamber to the ALD chamber. After ALD growth, the samples were annealed in-situ at 600 °C in vacuum (10 −7 Pa) for 1–2 h. Reflection high-energy electron diffraction was performed during the MBE growth of STO on Si(001), as well as after deposition of TiO 2 by ALD. The ALD films were shown to be highly ordered with the substrate. At least four unit cells of STO must be present to create a stable template on the Si(001) substrate for epitaxial anatase TiO 2 growth. X-ray diffraction revealed that the TiO 2 films were anatase with only the (004) reflection present at 2θ = 38.2°, indicating that the c-axis is slightly reduced from that of anatase powder (2θ = 37.9°). Anatase TiO 2 films up to 100 nm thick have been grown that remain highly ordered in the (001) direction on STO-buffered Si(001) substrates. - Highlights: ► Epitaxial anatase films are grown by atomic layer deposition (ALD) on Si(001). ► Four unit cells of SrTiO 3 on silicon create a stable template for ALD. ► TiO 2 thin films have a compressed c-axis and an expanded a-axis. ► Up to 100 nm thick TiO 2 films remain highly ordered in the (001) direction.

  9. Strontium titanate thin film deposition - structural and electronical characterization

    Energy Technology Data Exchange (ETDEWEB)

    Hanzig, Florian; Hanzig, Juliane; Stoecker, Hartmut; Mehner, Erik; Abendroth, Barbara; Meyer, Dirk C. [TU Bergakademie Freiberg, Institut fuer Experimentelle Physik (Germany); Franke, Michael [TU Bergakademie Freiberg, Institut fuer Elektronik- und Sensormaterialien (Germany)

    2012-07-01

    Strontium titanate is on the one hand a widely-used model oxide for solids which crystallize in perovskite type of structure. On the other hand, with its large band-gap energy and its mixed ionic and electronic conductivity, SrTiO{sub 3} is a promising isolating material in metal-insulator-metal (MIM) structures for resistive switching memory cells. Here, we used physical vapour deposition methods (e. g. electron-beam and sputtering) to produce strontium titanate layers. Sample thicknesses were probed with X-ray reflectometry (XRR) and spectroscopic ellipsometry (SE). Additionally, layer densities and dielectric functions were quantified with XRR and SE, respectively. Using infrared spectroscopy free electron concentrations were obtained. Phase and element composition analysis was carried out with grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy. Subsequent temperature treatment of samples lead to crystallization of the initially amorphous strontium titanate.

  10. Mechanical and Microstructural Evaluation of Barium Strontium Titanate Thin Films for Improved Antenna Performance and Reliability

    National Research Council Canada - National Science Library

    Hubbard, C

    1999-01-01

    Ferroelectric barium strontium titanate (Ba(1-x)SrxTiO3 BSTO) films of 1-micron nominal thickness were deposited on single crystals of sapphire and electroded substrates at substrate temperatures varying from 30 deg C to 700 deg C...

  11. Development of a metrology method for composition and thickness of barium strontium titanate thin films

    International Nuclear Information System (INIS)

    Remmel, Thomas; Werho, Dennis; Liu, Ran; Chu, Peir

    1998-01-01

    Thin films of barium strontium titanate (BST) are being investigated as the charge storage dielectric in advanced memory devices, due to their promise for high dielectric constant. Since the capacitance of BST films is a function of both stoichiometry and thickness, implementation into manufacturing requires precise metrology methods to monitor both of these properties. This is no small challenge, considering the BST film thicknesses are 60 nm or less. A metrology method was developed based on X-ray Fluorescence and applied to the measurement of stoichiometry and thickness of BST thin films in a variety of applications

  12. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van, Tendeloo, G.; Wang, J.; Wu, Tao

    2013-01-01

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

  13. Comparison of barium titanate thin films prepared by inkjet printing and spin coating

    Directory of Open Access Journals (Sweden)

    Jelena Vukmirović

    2015-09-01

    Full Text Available In this paper, barium titanate films were prepared by different deposition techniques (spin coating, office Epson inkjet printer and commercial Dimatix inkjet printer. As inkjet technique requires special rheological properties of inks the first part of the study deals with the preparation of inks, whereas the second part examines and compares structural characteristics of the deposited films. Inks were synthesized by sol-gel method and parameters such as viscosity, particle size and surface tension were measured. Deposited films were examined by optical and scanning electron microscopy, XRD analysis and Raman spectroscopy. The findings consider advantages and disadvantages of the particular deposition techniques.

  14. Sorption of U(VI) in surfaces of SrTiO3

    International Nuclear Information System (INIS)

    Ortiz O, H.B.; Ordonez R, E.; Fernandez V, S.M.

    2004-01-01

    In this work is presented the physico chemical characterization and evaluation of those surface properties and of sorption of U on the SrTiO 3 like possible candidate for contention barrier in the deep geological confinement. The made studies showed that the SrTiO 3 presents maximum levels of sorption of positive nature species (mainly UO 2 2+ and UO 2 NO 3 + ). (Author)

  15. Etude de capacités en couches minces à base d'oxydes métalliques à très forte constante diélectrique, BaTiO3, SrTiO3 et SrTiO3/BaTiO3 déposées par pulvérisation par faisceau d'ions

    OpenAIRE

    Guillan , Julie

    2005-01-01

    In a view of miniaturization in microelectronics and more particularly in the sector of mobile phone, perovskites materials with very high permittivity are interesting candidates to replace dielectrics currently used in the development of Metal/Insulator/Metal (MIM) capacitor. This work is devoted to the development and the characterization of thin layers of strontium titanate (SrTiO3) and barium titanate (BaTiO3) deposited by Ion Beam Sputtering (IBS) in capacitive structure Pt/high-k/Pt.An ...

  16. Imaging and tuning polarity at SrTiO3 domain walls

    Science.gov (United States)

    Frenkel, Yiftach; Haham, Noam; Shperber, Yishai; Bell, Christopher; Xie, Yanwu; Chen, Zhuoyu; Hikita, Yasuyuki; Hwang, Harold Y.; Salje, Ekhard K. H.; Kalisky, Beena

    2017-12-01

    Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.

  17. Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Lecarpentier, F.; Daglish, M.; Kemmitt, T.

    2001-01-01

    Ferroelectric thin films of lead zirconate titanate Pb(Zr x Ti 1-x )O 3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

  18. Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface.

    Science.gov (United States)

    Lee, M; Arras, R; Warot-Fonrose, B; Hungria, T; Lippmaa, M; Daimon, H; Casanove, M J

    2017-11-01

    The structure of Ir-doped LaAlO 3 /SrTiO 3 (001) interfaces was investigated on the atomic scale using probe-corrected transmission electron microscopy in high-angle annular dark-field scanning mode (HAADF-STEM) and electron energy loss spectroscopy (EELS), combined with first-principles calculations. We report the evolution of the strain state experimentally measured in a 5 unit-cell thick LaAlO 3 film as a function of the Ir concentration in the topmost SrTiO 3 layer. It is shown that the LaAlO 3 layers remain fully elastically strained up to 3% of Ir doping, whereas a higher doping level seems to promote strain relaxation through enhanced cationic interdiffusion. The observed differences between the energy loss near edge structure (ELNES) of Ti-L 2,3 and O-K edges at non-doped and Ir-doped interfaces are consistent with the location of the Ir dopants at the interface, up to 3% of Ir doping. These findings, supported by the results of density functional theory (DFT) calculations, provide strong evidence that the effect of dopant concentrations on the properties of this kind of interface should not be analyzed without obtaining essential information from the fine structural and chemical analysis of the grown structures.

  19. Quasistatic antiferromagnetism in the quantum wells of SmTiO3/SrTiO3 heterostructures

    Science.gov (United States)

    Need, Ryan F.; Marshall, Patrick B.; Kenney, Eric; Suter, Andreas; Prokscha, Thomas; Salman, Zaher; Kirby, Brian J.; Stemmer, Susanne; Graf, Michael J.; Wilson, Stephen D.

    2018-03-01

    High carrier density quantum wells embedded within a Mott insulating matrix present a rich arena for exploring unconventional electronic phase behavior ranging from non-Fermi-liquid transport and signatures of quantum criticality to pseudogap formation. Probing the proposed connection between unconventional magnetotransport and incipient electronic order within these quantum wells has however remained an enduring challenge due to the ultra-thin layer thicknesses required. Here we address this challenge by exploring the magnetic properties of high-density SrTiO3 quantum wells embedded within the antiferromagnetic Mott insulator SmTiO3 via muon spin relaxation and polarized neutron reflectometry measurements. The one electron per planar unit cell acquired by the nominal d0 band insulator SrTiO3 when embedded within a d1 Mott SmTiO3 matrix exhibits slow magnetic fluctuations that begin to freeze into a quasistatic spin state below a critical temperature T*. The appearance of this quasistatic well magnetism coincides with the previously reported opening of a pseudogap in the tunneling spectra of high carrier density wells inside this film architecture. Our data suggest a common origin of the pseudogap phase behavior in this quantum critical oxide heterostructure with those observed in bulk Mott materials close to an antiferromagnetic instability.

  20. Adhesion strength of lead zirconate titanate sol-gel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Berfield, Thomas A., E-mail: tom.berfield@louisville.edu [Department of Mechanical Engineering, University of Louisville, Louisville, KY 40292 (United States); Kitey, Rajesh [Department of Aerospace Engineering, Indian Institute of Technology Kanpur, Kanpur (India); Kandula, Soma S. [Intel Corporation, Portland, OR (United States)

    2016-01-01

    The adhesion strength between a thin film and substrate is often the critical parameter that controls the initiation as well as the mode of film failure. In this work, a laser-based spallation method is used to determine the adhesion strength of “as deposited” lead zirconate titanate (PZT) sol-gel thin films on the two functionally different substrates. For the first case, PZT sol-gel film is deposited onto bare Si/SiO{sub 2} substrates via spin casting. The extremely high adhesion strength between the film and the substrate necessitated an additional platinum mass superlayer to be deposited on top of the PZT film in order to induce interfacial failure. For the superlayer film system, a hybrid experimental/numerical method is employed for determining the substrate/film interfacial strength, quantified to be in the range of 460–480 MPa. A second substrate variation with lower adhesion strength is also prepared by applying a self-assembled octadecyltrichlorosilane (ODS) monolayer to the Si/SiO{sub 2} substrate prior to the film deposition. For the monolayer-coated substrate case, the adhesion strength is observed to be significantly lower (54.7 MPa) when compared to the earlier case. - Highlights: • A non-contact laser spallation method is used to determine PZT film adhesion. • A mediated self-assembled monolayer is shown to greatly reduce interface strength. • Adhesion strength for even well-bonded thin films was found using a superlayer.

  1. Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

    International Nuclear Information System (INIS)

    Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

    1990-01-01

    In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

  2. Study of thin films of carrier-doped strontium titanate with emphasis on their interfaces with organic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Naoki [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)]. E-mail: naokis@e.kuicr.kyoto-u.ac.jp; Harada, Youichiro [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Terashima, Takahito [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Kanda, Ryoko [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Takano, Mikio [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)

    2005-05-15

    Fifty nanometer-thick metal-doped strontium titanate (M:STO, M = La and V) films deposited epitaxially on single crystalline STO substrates were characterized in comparison with indium tin oxide (ITO) covered glasses, to check their applicability to optically transparent anode materials for organic optoelectronic devices. M:STO, in particular V:STO, films turned out to have distinct surface flatness, needfully low electric resistivities and notably large work functions. While their optical transmittances are lower than those of ITOs at this moment, we suggest that M:STO films have a potential to take the place of ITO films. Further, we have observed energy level alignments for copper phthalocyanine thin films at the interface of V:STO.

  3. Temperature-dependent surface structure, composition, and electronic properties of the clean SrTiO3(111) crystal face: Low-energy-electron diffraction, Auger-electron spectroscopy, electron energy loss, and ultraviolet-photoelectron spectroscopy studies

    International Nuclear Information System (INIS)

    Lo, W.J.; Somorjai, G.A.

    1978-01-01

    Low-energy-electron diffraction, Auger-electron spectroscopy, electron-energy-loss, and ultraviolet-photoelectron spectroscopies were used to study the structure, composition, and electron energy distribution of a clean single-crystal (111) face of strontium titanate (perovskite). The dependence of the surface chemical composition on the temperature has been observed along with corresponding changes in the surface electronic properties. High-temperature Ar-ion bombardment causes an irreversible change in the surface structure, stoichiometry, and electron energy distribution. In contrast to the TiO 2 surface, there are always significant concentrations of Ti 3+ in an annealed ordered SrTiO 3 (111) surface. This stable active Ti 3+ monolayer on top of a substrate with large surface dipole potential makes SrTiO 3 superior to TiO 2 when used as a photoanode in the photoelectrochemical cell

  4. Substrate clamping effects on irreversible domain wall dynamics in lead zirconate titanate thin films.

    Science.gov (United States)

    Griggio, F; Jesse, S; Kumar, A; Ovchinnikov, O; Kim, H; Jackson, T N; Damjanovic, D; Kalinin, S V; Trolier-McKinstry, S

    2012-04-13

    The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a dramatic change in the global dielectric nonlinearity and its frequency dependence as a function of mechanical clamping. Furthermore, we observe a transition from strong clustering of the nonlinear response for the clamped case to almost uniform nonlinearity for the released film. This behavior is ascribed to increased mobility of domain walls. These results suggest the dominant role of collective strain interactions mediated by the local and global mechanical boundary conditions on the domain wall dynamics. The work presented in this Letter demonstrates that measurements on clamped films may considerably underestimate the piezoelectric coefficients and coupling constants of released structures used in microelectromechanical systems, energy harvesting systems, and microrobots.

  5. Strontium Titanate Buffer Layers on Cu/33%Ni Substrates using a Novel Solution Chemistry

    DEFF Research Database (Denmark)

    Pallewatta, Pallewatta G A P; Yue, Zhao; Hui, Tian

    2013-01-01

    SrTiO3 is a widely studied perovskite material due to its advantages as a buffer template which can be simply applied between a metal substrate tape and a superconducting layer in 2G high temperature superconducting (HTS) tapes. In this study, heteroepitaxial SrTiO3 thin films were deposited on t...

  6. Physics of SrTiO3-based heterostructures and nanostructures: a review.

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2018-02-09

    This review provides a summary of the rich physics expressed within SrTiO 3 -based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO 3 itself, we will then discuss the basics of SrTiO 3 -based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

  7. Physics of SrTiO3-based heterostructures and nanostructures: a review

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2018-03-01

    This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

  8. Wafer scale lead zirconate titanate film preparation by sol-gel method using stress balance layer

    International Nuclear Information System (INIS)

    Lu Jian; Kobayashi, Takeshi; Yi Zhang; Maeda, Ryutaro; Mihara, Takashi

    2006-01-01

    In this paper, platinum/titanium (Pt/Ti) film was introduced as a residual stress balance layer into wafer scale thick lead zirconate titanate (PZT) film fabrication by sol-gel method. The stress developing in PZT film's bottom electrode as well as in PZT film itself during deposition were analyzed; the wafer curvatures, PZT crystallizations and PZT electric properties before and after using Pt/Ti stress balance layer were studied and compared. It was found that this layer is effective to balance the residual stress in PZT film's bottom electrode induced by thermal expansion coefficient mismatch and Ti diffusion, thus can notably reduce the curvature of 4-in. wafer from - 40.5 μm to - 12.9 μm after PZT film deposition. This stress balance layer was also found effective to avoid the PZT film cracking even when annealed by rapid thermal annealing with heating-rate up to 10.5 deg. C/s. According to X-ray diffraction analysis and electric properties characterization, crack-free uniform 1-μm-thick PZT film with preferred pervoskite (001) orientation, excellent dielectric constant, as high as 1310, and excellent remanent polarization, as high as 39.8 μC/cm 2 , can be obtained on 4-in. wafer

  9. Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

    KAUST Repository

    Nazir, Safdar; Pulikkotil, J. J.; Schwingenschlö gl, Udo; Singh, Nirpendra

    2011-01-01

    Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

  10. Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

    KAUST Repository

    Nazir, Safdar

    2011-03-31

    Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

  11. Carrier density modulation by structural distortions at modified LaAlO3/SrTiO3 interfaces

    International Nuclear Information System (INIS)

    Schoofs, Frank; Vickers, Mary E; Egilmez, Mehmet; Fix, Thomas; Kleibeuker, Josée E; MacManus-Driscoll, Judith L; Blamire, Mark G; Carpenter, Michael A

    2013-01-01

    In order to study the fundamental conduction mechanism of LaAlO 3 /SrTiO 3 (LAO/STO) interfaces, heterostructures were modified with a single unit cell interface layer of either an isovalent titanate ATiO 3 (A = Ca, Sr, Sn, Ba) or a rare earth modified Sr 0.5 RE 0.5 TiO 3 (RE = La, Nd, Sm, Dy) between the LAO and the STO. A strong coupling between the lattice strain induced in the LAO layer by the interfacial layers and the sheet carrier density in the STO substrate is observed. The observed crystal distortion of the LAO is large and it is suggested that it couples into the sub-surface STO, causing oxygen octahedral rotation and deformation. We propose that the ‘structural reconstruction’ which occurs in the STO surface as a result of the stress in the LAO is the enabling trigger for two-dimensional conduction at the LAO/STO interface by locally changing the band structure and releasing trapped carriers. (paper)

  12. Visible light carrier generation in co-doped epitaxial titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Comes, Ryan B., E-mail: ryan.comes@pnnl.gov; Kaspar, Tiffany C.; Chambers, Scott A. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States); Smolin, Sergey Y.; Baxter, Jason B. [Department of Chemical and Biological Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Gao, Ran [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Apgar, Brent A. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Champaign, Illinois 61801 (United States); Martin, Lane W. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Bowden, Mark E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States)

    2015-03-02

    Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  13. Comparative study of broadband electrodynamic properties of single-crystal and thin-film strontium titanate

    International Nuclear Information System (INIS)

    Findikoglu, A. T.; Jia, Q. X.; Kwon, C.; Reagor, D. W.; Kaduchak, G.; Rasmussen, K. Oe.; Bishop, A. R.

    1999-01-01

    We have used a coplanar waveguide structure to study broadband electrodynamic properties of single-crystal and thin-film strontium titanate. We have incorporated both time- and frequency-domain measurements to determine small-signal effective refractive index and loss tangent as functions of frequency (up to 4 GHz), dc bias (up to 10 6 V/m), and cryogenic temperature (17 and 60 K). The large-signal impulse response of the devices and the associated phenomenological nonlinear wave equation illustrate how dissipation and nonlinearity combine to produce the overall response in the large-signal regime. (c) 1999 American Institute of Physics

  14. Chemical solution deposited BaPbO3 buffer layers for lead zirconate titanate ferroelectric films

    International Nuclear Information System (INIS)

    Tseng, T.-K.; Wu, J.-M.

    2005-01-01

    Conductive perovskite BaPbO 3 (BPO) films have been prepared successfully by chemical solution deposition method through spin-coating on Pt/Ti/SiO 2 /Si substrates. The choice of baking temperature is a key factor on the development of conducting BPO perovskite phase. When the baking temperature is higher than 350 deg. C, the BPO films contain a high content of BaCO 3 phase after annealing at temperatures higher than 500 deg. C. If the baking temperature is chosen lower than 300 deg. C, such as 200 deg. C, the annealed BPO films consist mostly of perovskite with only traces of BaCO 3 . Choosing 200 deg. C as the baking temperature, the BPO films developed single perovskite phase at temperatures as low as 550 deg. C. The perovskite BPO phase is stable in the range of 550-650 deg. C and the measured sheet resistance of the BPO films is about 2-3 Ω/square. The perovskite BPO film as a buffer layer provides improvement in electric properties of lead zirconate titanate films

  15. Appearance and disappearance of ferromagnetism in ultrathin LaMnO3 on SrTiO3 substrate: A viewpoint from first principles

    Science.gov (United States)

    An, Ming; Weng, Yakui; Zhang, Huimin; Zhang, Jun-Jie; Zhang, Yang; Dong, Shuai

    2017-12-01

    The intrinsic magnetic state (ferromagnetic or antiferromagnetic) of ultrathin LaMnO3 films on the most commonly used SrTiO3 substrate is a long-existing question under debate. Either strain effect or nonstoichiometry was argued to be responsible for the experimental ferromagnetism. In a recent experiment [X. R. Wang, C. J. Li, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, N. Poccia, A. Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando, and H. Hilgenkamp, Science 349, 716 (2015), 10.1126/science.aaa5198], one more mechanism, namely, the self-doping due to polar discontinuity, was argued to be the driving force of ferromagnetism beyond the critical thickness. Here systematic first-principles calculations have been performed to check these mechanisms in ultrathin LaMnO3 films as well as superlattices. Starting from the very precise descriptions of both LaMnO3 and SrTiO3, it is found that the compressive strain is the dominant force for the appearance of ferromagnetism, while the open surface with oxygen vacancies leads to the suppression of ferromagnetism. Within LaMnO3 layers, the charge reconstructions involve many competitive factors and certainly go beyond the intuitive polar catastrophe model established for LaAlO3/SrTiO3 heterostructures. Our paper not only explains the long-term puzzle regarding the magnetism of ultrathin LaMnO3 films but also sheds light on how to overcome the notorious magnetic dead layer in ultrathin manganites.

  16. Controlling the Carrier Density of SrTiO3-Based Heterostructures with Annealing

    DEFF Research Database (Denmark)

    Christensen, Dennis Valbjørn; von Soosten, Merlin; Trier, Felix

    2017-01-01

    The conducting interface between the insulating oxides LaAlO3 (LAO) and SrTiO3 (STO) displays numerous physical phenomena that can be tuned by varying the carrier density, which is generally achieved by electrostatic gating or adjustment of growth parameters. Here, it is reported how annealing...... in oxygen at low temperatures (T

  17. EPR of photochromic Mo3+ in SrTiO3

    NARCIS (Netherlands)

    Kool, Th.W.

    2010-01-01

    In single crystals of SrTiO_3, a paramagnetic center, characterized by S = 3/2 and hyperfine interaction with an I = 5/2 nuclear spin has been observed in the temperature range 4.2K-77K by means of EPR. The impurity center is attributed to Mo3+. No additional line splitting in the EPR spectrum due

  18. Conductivity and structure of sub-micrometric SrTiO3-YSZ composites

    DEFF Research Database (Denmark)

    Ruiz Trejo, Enrique; Thydén, Karl Tor Sune; Bonanos, Nikolaos

    2016-01-01

    Sub-micrometric composites of SrTiO3-YSZ (1:1 volume) and samples of SrTiO3 were prepared by high temperature consolidation of precursors obtained by precipitation with NaOH. The structure development and morphology of the precursors were studied by XRD and SEM. The perovskite and fluorite phases...... in the composites are clearly formed at 600°C with no signs of reaction up to 1100°C; the nominally pure SrTiO3 can be formed at temperatures as low as 400°C. Composites with sub-micrometric grain sizes can be prepared successfully without reaction between the components, although a change in the cell parameter...... of the SrTiO3 is attributed to the presence of Na. The consolidated composites were studied by impedance spectroscopy between 200 and 400°C and at a fixed temperature of 600°C with a scan in the partial pressure of oxygen. The composites did not exhibit high levels of ionic conductivity in the grain...

  19. Fabrication of Schottky Junction Between Au and SrTiO3

    Science.gov (United States)

    Inoue, Akira; Izumisawa, Kei; Uwe, Hiromoto

    2001-05-01

    A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (˜ 10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.

  20. Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

    Science.gov (United States)

    Kampangkeaw, Satreerat

    2002-03-01

    Using off-axis pulsed laser deposition, we have grown strontium titanate (STO) films on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. We measured the film dielectric constant and loss tangent as a function of temperature in the 10kHz to 1 MHz frequency range. We found that the loss is less than 0.01 We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent. The obtained figured of merit at 35K and 1MHz is about 1000 comparable to bulk values. The dielectric constant of these films can be changed by a factor of 4-8 in the presence of a DC electric field up to 5V/μm. The films show significant variations of dielectric properties grown on different substrates at different locations respect to the axis of the plume. The STO films on LAO having high dielectric constant and dielectric tuning were grown in region near the center of the plume. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis.

  1. Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

    Science.gov (United States)

    Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

    1998-03-01

    We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

  2. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  3. Low temperature fabrication of barium titanate hybrid films and their dielectric properties

    International Nuclear Information System (INIS)

    Kobayashi, Yoshio; Saito, Hirobumi; Kinoshita, Takafumi; Nagao, Daisuke; Konno, Mikio

    2011-01-01

    A method for incorporating BT nano-crystalline into barium titanate (BT) films is proposed for a low temperature fabrication of high dielectric constant films. BT nanoparticles were synthesized by hydrolysis of a BT complex alkoxide in 2-methoxyethanol (ME)/ethanol cosolvent. As the ME volume fraction in the cosolvent (ME fraction) increased from 0 to 100%, the particle and crystal sizes tended to increase from 13.4 to 30.2 nm and from 15.8 to 31.4 nm, respectively, and the particle dispersion in the solution became more improved. The BT particles were mixed with BT complex alkoxide dissolved in an ME/ethanol cosolvent for preparing a precursor solution that was then spin-coated on a Pt substrate and dried at 150 o C. The dielectric constant of the spin-coated BT hybrid film increased with an increase in the volume fraction of the BT particles in the film. The dissipation factor of the hybrid film tended to decrease with an increase in the ME fraction in the precursor solution. The hybrid film fabricated at a BT fraction of 30% and an ME fraction of 25% attained a dielectric constant as high as 94.5 with a surface roughness of 14.0 nm and a dissipation factor of 0.11.

  4. In-situ YBa2Cu3O7/SrTiO3/YBa2Cu3O7 a-b plane Josephson edge junctions

    International Nuclear Information System (INIS)

    Aharoni, E.; Koren, G.; Polturak, E.; Cohen, D.; Iskevitch, E.

    1992-01-01

    YBCO/SrTiO 3 /YBCO thin film edge junctions were prepared in-situ and characterized. The epitaxial growth of SrTiO 3 on YBCO led to a sharp and well defined junction edge with a very high yield. Typical junctions showed critical currents up to 83 K, with I c ∝ (1 - T/Tc) 2 temperature dependence. Sharp Shapiro steps were observed under microwave radiation at temperatures up to 82 K. A typical diffraction pattern was found in the voltage response of the junctions to transverse magnetic field. (orig.)

  5. Synthesis of BaTiO3 and SrTiO3 by microwave assisted hydrothermal method (MAH) using anatase as titanium precursor

    International Nuclear Information System (INIS)

    Magalhães, Renata da Silva; Macedo Junior, Wagner Dias; Souza, Agda Eunice de; Teixeira, Silvio Rainho; Li, Maximo Siu; Longo, Elson

    2016-01-01

    Full text: Strontium and barium titanates (SrTiO 3 (ST) and BaTiO 3 (BT)) in their crystalline form belong to the perovskite (ABO 3 ) class. Both display a semiconductor behavior with many interesting properties. The method of synthesis employed and different precursors may influence the morphology and properties of ceramic materials [1,2]. Barium (BT) and strontium (St) titanates were produced using the Microwave Assisted Hydrothermal Method (MAH), different concentrations (1,3 and 6 molL -1 ) of mineralizer (KOH) and a different titanium precursor: a complex anatase-hydrogen peroxide. Barium and strontium chloride were used as the other metal precursors. The resulting material were characterized by different techniques such as: X-ray diffraction (XRD), Micro-Raman Spectroscopy (MR), UV-Vis, Scanning Electron microscopy (SEM) and finally their photoluminescent emissions (FL) were recorded at room temperature. The results show that there were differences in crystallinity, morphology, number of formed phases and photoluminescent emission, among the titanate produced with different concentrations of mineralizer. References: [1] A.E. Souza et al., Order–disorder degree of self-assembled clusters: Influence on photoluminescence emission and morphology of Ba x Sr 1-x TiO 3 nanocrystals, Chemical Physics Letters 514 (2011) 301–306. [2] T. M. Mazzo et al., Influence of titanium precursor on photoluminescent emission of micro-cube-shaped CaTiO 3 , Journal of Luminescence 165 (2015). (author)

  6. Multilayer bioactive glass/zirconium titanate thin films in bone tissue engineering and regenerative dentistry

    Science.gov (United States)

    Mozafari, Masoud; Salahinejad, Erfan; Shabafrooz, Vahid; Yazdimamaghani, Mostafa; Vashaee, Daryoosh; Tayebi, Lobat

    2013-01-01

    Surface modification, particularly coatings deposition, is beneficial to tissue-engineering applications. In this work, bioactive glass/zirconium titanate composite thin films were prepared by a sol-gel spin-coating method. The surface features of the coatings were studied by scanning electron microscopy, atomic force microscopy, and spectroscopic reflection analyses. The results show that uniform and sound multilayer thin films were successfully prepared through the optimization of the process variables and the application of carboxymethyl cellulose as a dispersing agent. Also, it was found that the thickness and roughness of the multilayer coatings increase nonlinearly with increasing the number of the layers. This new class of nanocomposite coatings, comprising the bioactive and inert components, is expected not only to enhance bioactivity and biocompatibility, but also to protect the surface of metallic implants against wear and corrosion. PMID:23641155

  7. Doping site dependent thermoelectric properties of epitaxial strontium titanate thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Mehdizadeh Dehkordi, Arash; Tritt, Terry M.; Alshareef, Husam N.

    2014-01-01

    We demonstrate that the thermoelectric properties of epitaxial strontium titanate (STO) thin films can be improved by additional B-site doping of A-site doped ABO3 type perovskite STO. The additional B-site doping of A-site doped STO results in increased electrical conductivity, but at the expense of Seebeck coefficient. However, doping on both sites of the STO lattice significantly reduces the lattice thermal conductivity of STO by adding more densely and strategically distributed phononic scattering centers that attack wider phonon spectra. The additional B-site doping limits the trade-off relationship between the electrical conductivity and total thermal conductivity of A-site doped STO, leading to an improvement in the room-temperature thermoelectric figure of merit, ZT. The 5% Pr3+ and 20% Nb5+ double-doped STO film exhibits the best ZT of 0.016 at room temperature. This journal is

  8. Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

    Science.gov (United States)

    Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

    2018-05-01

    Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

  9. MIS field effect transistor with barium titanate thin film as a gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Firek, P., E-mail: pfirek@elka.pw.edu.p [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Werbowy, A.; Szmidt, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2009-11-25

    The properties of barium titanate (BaTiO{sub 3}, BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO{sub 3} (containing La{sub 2}O{sub 3} admixture) thin films in a role of gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO{sub 3} + La{sub 2}O{sub 3} (2 wt.%) target. In the paper transfer and output current-voltage (I-V), transconductance and output conductance characteristics of obtained transistors are presented and discussed. Basic parameters of these devices like, e.g. threshold voltage (V{sub TH}), are determined and discussed.

  10. Ferroelectric and Piezoelectric properties of (111) oriented lanthanum modified lead zirconate titanate film

    International Nuclear Information System (INIS)

    Dutta, Soma; Antony Jeyaseelan, A.; Sruthi, S.

    2014-01-01

    Lanthanum modified lead zirconate titanate (PLZT) thick film with molecular formula of Pb 0.92 La 0.08 (Zr 0.52 Ti 0.48 ) 0.98 O 3 was grown preferentially along (111) direction on Pt/SiO 2 /Si (platinum/silicon oxide/silicon) substrate by spin coating of chemical solution. The directional growth of the film was facilitated by platinum (Pt) (111) template and rapid thermal annealing. X-ray diffraction pattern and atomic force microscopy revealed the preferential growth of the PLZT film. The film was characterized for ferroelectric and detailed piezoelectric properties in a parallel plate capacitor (metal–PLZT–metal) configuration. Ferroelectric characterization of the film showed saturated hysteresis loop with remanent polarization and coercive electric field values of 10.14 μC/cm 2 and 42 kV/cm, respectively, at an applied field of 300 kV/cm. Longitudinal piezoelectric coefficient (d 33,f ) was measured by employing converse piezoelectric effect where electrical charge response and displacement were measured with electrical voltage excitation on the sample electrodes. The effective transverse piezoelectric coefficient (e 31,f ) was derived from charge measurement with an applied mechanical excitation strain by using the four point bending method. d 33,f and e 31,f coefficients of PLZT films were found to be 380 pm/V and − 0.831 C/m 2 respectively. - Highlights: • PLZT (111) film is prepared by spin coating of chemical sol on Pt (111) template. • Piezoelectric d 33 value (380 pm/V) of PLZT film is found 20% higher than PZT. • Transverse piezocoefficient e 31,f of PLZT film is reported for the first time

  11. Ferroelectric and Piezoelectric properties of (111) oriented lanthanum modified lead zirconate titanate film

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, Soma, E-mail: som@nal.res.in; Antony Jeyaseelan, A.; Sruthi, S.

    2014-07-01

    Lanthanum modified lead zirconate titanate (PLZT) thick film with molecular formula of Pb{sub 0.92}La{sub 0.08}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.98}O{sub 3} was grown preferentially along (111) direction on Pt/SiO{sub 2}/Si (platinum/silicon oxide/silicon) substrate by spin coating of chemical solution. The directional growth of the film was facilitated by platinum (Pt) (111) template and rapid thermal annealing. X-ray diffraction pattern and atomic force microscopy revealed the preferential growth of the PLZT film. The film was characterized for ferroelectric and detailed piezoelectric properties in a parallel plate capacitor (metal–PLZT–metal) configuration. Ferroelectric characterization of the film showed saturated hysteresis loop with remanent polarization and coercive electric field values of 10.14 μC/cm{sup 2} and 42 kV/cm, respectively, at an applied field of 300 kV/cm. Longitudinal piezoelectric coefficient (d{sub 33,f}) was measured by employing converse piezoelectric effect where electrical charge response and displacement were measured with electrical voltage excitation on the sample electrodes. The effective transverse piezoelectric coefficient (e{sub 31,f}) was derived from charge measurement with an applied mechanical excitation strain by using the four point bending method. d{sub 33,f} and e{sub 31,f} coefficients of PLZT films were found to be 380 pm/V and − 0.831 C/m{sup 2} respectively. - Highlights: • PLZT (111) film is prepared by spin coating of chemical sol on Pt (111) template. • Piezoelectric d{sub 33} value (380 pm/V) of PLZT film is found 20% higher than PZT. • Transverse piezocoefficient e{sub 31,f} of PLZT film is reported for the first time.

  12. Non-aqueous electrochemical deposition of lead zirconate titanate films for flexible sensor applications

    Science.gov (United States)

    Joseph, Sherin; Kumar, A. V. Ramesh; John, Reji

    2017-11-01

    Lead zirconate titanate (PZT) is one of the most important piezoelectric materials widely used for underwater sensors. However, PZTs are hard and non-compliant and hence there is an overwhelming attention devoted toward making it flexible by preparing films on flexible substrates by different routes. In this work, the electrochemical deposition of composition controlled PZT films over flexible stainless steel (SS) foil substrates using non-aqueous electrolyte dimethyl sulphoxide (DMSO) was carried out. Effects of various key parameters involved in electrochemical deposition process such as current density and time of deposition were studied. It was found that a current density of 25 mA/cm2 for 5 min gave a good film. The morphology and topography evaluation of the films was carried out by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively, which showed a uniform morphology with a surface roughness of 2 nm. The PZT phase formation was studied using X-ray diffraction (XRD) and corroborated with Raman spectroscopic studies. The dielectric constant, dielectric loss, hysteresis and I-V characteristics of the film was evaluated.

  13. Microscopic characterization of Fe nanoparticles formed on SrTiO3(001 and SrTiO3(110 surfaces

    Directory of Open Access Journals (Sweden)

    Miyoko Tanaka

    2016-06-01

    Full Text Available Fe nanoparticles grown on SrTiO3 (STO {001} and {110} surfaces at room temperature have been studied in ultrahigh vacuum by means of transmission electron microscopy and scanning tunnelling microscopy. It was shown that some Fe nanoparticles grow epitaxially. They exhibit a modified Wulff shape: nanoparticles on STO {001} surfaces have truncated pyramid shapes while those on STO {110} surfaces have hexagonal shapes. From profile-view TEM images, approximate values of the adhesion energy of the nanoparticles for both shapes are obtained.

  14. Multicomponent doped barium strontium titanate thin films for tunable microwave applications

    Science.gov (United States)

    Alema, Fikadu Legesse

    In recent years there has been enormous progress in the development of barium strontium titanate (BST) films for tunable microwave applications. However, the properties of BST films still remain inferior compared to bulk materials, limiting their use for microwave technology. Understanding the film/substrate mismatch, microstructure, and stoichiometry of BST films and finding the necessary remedies are vital. In this work, BST films were deposited via radio frequency magnetron sputtering method and characterized both analytically and electrically with the aim of optimizing their properties. The stoichiometry, crystal structure, and phase purity of the films were studied by varying the oxygen partial pressure (OPP) and total gas pressure (TGP) in the chamber. A better stoichiometric match between film and target was achieved when the TGP is high (> 30 mTorr). However, the O2/Ar ratio should be adjusted as exceeding a threshold of 2 mTorr in OPP facilitates the formation of secondary phases. The growth of crystalline film on platinized substrates was achieved only with a lower temperature grown buffer layer, which acts as a seed layer by crystallizing when the temperature increases. Concurrent Mg/Nb doping has significantly improved the properties of BST thin films. The doped film has shown an average tunability of 53%, which is only ˜8 % lower than the value for the undoped film. This drop is associated with the Mg ions whose detrimental effects are partially compensated by Nb ions. Conversely, the doping has reduced the dielectric loss by ˜40 % leading to a higher figure of merit. Moreover, the two dopants ensure a charge neutrality condition which resulted in significant leakage current reduction. The presence of large amounts of empty shallow traps related to Nb Ti localize the free carriers injected from the contacts; thus increase the device control voltage substantially (>10 V). A combinatorial thin film synthesis method based on co-sputtering of two BST

  15. Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate

    Directory of Open Access Journals (Sweden)

    Robert Mamazza

    2012-04-01

    Full Text Available Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and parallel resistance data measured as a function of applied DC bias, polarization versus applied electric field strength and DC load/unload experiments. These capacitors exhibited significant leakage (in the range 8–210 μA/cm2 and dielectric loss. Measured breakdown strength for the sputtered doped barium titanate films was in the range 200 kV/cm −2 MV/cm. For all devices tested, we observed clear evidence for dielectric saturation at applied electric field strengths above 100 kV/cm: saturated polarization was in the range 8–15 μC/cm2. When cycled under DC conditions, the maximum energy density measured for any of the capacitors tested here was ~4.7 × 10−2 W-h/liter based on the volume of the dielectric material only. This corresponds to a specific energy of ~8 × 10−3 W-h/kg, again calculated on a dielectric-only basis. These results are compared to those reported by other authors and a simple theoretical treatment provided that quantifies the maximum energy that can be stored in these and similar devices as a function of dielectric strength and saturation polarization. Finally, a predictive model is developed to provide guidance on how to tailor the relative permittivities of high-k dielectrics in order to optimize their energy storage capacities.

  16. Effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate thin films: Experimental evidence and implications

    Science.gov (United States)

    Lou, X. J.; Zhang, H. J.; Luo, Z. D.; Zhang, F. P.; Liu, Y.; Liu, Q. D.; Fang, A. P.; Dkhil, B.; Zhang, M.; Ren, X. B.; He, H. L.

    2014-09-01

    The effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate (PZT) thin film was systematically investigated. It was found that electrical fatigue strongly affects the Rayleigh behaviour of the PZT film. Both the reversible and irreversible Rayleigh coefficients decrease with increasing the number of switching cycles. This phenomenon is attributed to the growth of an interfacial degraded layer between the electrode and the film during electrical cycling. The methodology used in this work could serve as an alternative way for evaluating the fatigue endurance and degradation in dielectric properties of ferroelectric thin-film devices during applications.

  17. Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

    International Nuclear Information System (INIS)

    Solanki, Anjana; Choudhary, Surbhi; Satsangi, Vibha R.; Shrivastav, Rohit; Dass, Sahab

    2013-01-01

    Highlights: ► Effect of 100 MeV Si 8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO 3 thin films was studied. ► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique. ► Optimal irradiation fluence for best PEC response was 5 × 10 11 ion cm −2 . ► Maximum photocurrent density was observed to be 0.7 mA cm −2 at 0.4 V/SCE. ► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity. -- Abstract: Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO 3 ) thin films were investigated by irradiating films with 100 MeV Si 8+ ions at different ion fluences in the range of 1 × 10 11 –2 × 10 13 ions cm −2 . BaTiO 3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm −2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO 3 film irradiated at 5 × 10 11 ions cm −2 , which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity

  18. The Investigation of E-beam Deposited Titanium Dioxide and Calcium Titanate Thin Films

    Directory of Open Access Journals (Sweden)

    Kristina BOČKUTĖ

    2013-09-01

    Full Text Available Thin titanium dioxide and calcium titanate films were deposited using electron beam evaporation technique. The substrate temperature during the deposition was changed from room temperature to 600 °C to test its influence on TiO2 film formation and optical properties. The properties of CaTiO3 were investigated also. For the evaluation of the structural properties the formed thin ceramic films were studied by X-ray diffraction (XRD, energy dispersive spectrometry (EDS, scanning electron microscopy (SEM and atomic force microscopy (AFM. Optical properties of thin TiO2 ceramics were investigated using optical spectroscope and the experimental data were collected in the ultraviolet-visible and near-infrared ranges with a step width of 1 nm. Electrical properties were investigated by impedance spectroscopy.It was found that substrate temperature has influence on the formed thin films density. The density increased when the substrate temperature increased. Substrate temperature had influence on the crystallographic, structural and optical properties also. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.1805

  19. Nonmonotonic anisotropy in charge conduction induced by antiferrodistortive transition in metallic SrTiO3

    Science.gov (United States)

    Tao, Qian; Loret, Bastien; Xu, Bin; Yang, Xiaojun; Rischau, Carl Willem; Lin, Xiao; Fauqué, Benoît; Verstraete, Matthieu J.; Behnia, Kamran

    2016-07-01

    Cubic SrTiO3 becomes tetragonal below 105 K. The antiferrodistortive (AFD) distortion leads to clockwise and counterclockwise rotation of adjacent TiO6 octahedra. This insulator becomes a metal upon the introduction of extremely low concentration of n -type dopants. However, signatures of the structural phase transition in charge conduction have remained elusive. Employing the Montgomery technique, we succeed in resolving the anisotropy of charge conductivity induced by the AFD transition, in the presence of different types of dopants. We find that the slight lattice distortion (liquids, the anisotropy has opposite signs for elastic and inelastic scattering. Increasing the concentration of dopants leads to a drastic shift in the temperature of the AFD transition either upward or downward. The latter result puts strong constraints on any hypothetical role played by the AFD soft mode in the formation of Cooper pairs and the emergence of superconductivity in SrTiO3.

  20. Magnetism Control by Doping in LaAlO3/SrTiO3 Heterointerfaces.

    Science.gov (United States)

    Yan, Hong; Zhang, Zhaoting; Wang, Shuanhu; Wei, Xiangyang; Chen, Changle; Jin, Kexin

    2018-04-25

    Magnetic two-dimensional electron gases at the oxide interfaces are always one of the key issues in spintronics, giving rise to intriguing magnetotransport properties. However, reports about magnetic two-dimensional electron gases remain elusive. Here, we obtain the magnetic order of LaAlO 3 /SrTiO 3 systems by introducing magnetic dopants at the La site. The transport properties with a characteristic of metallic behavior at the interfaces are investigated. More significantly, magnetic-doped samples exhibit obvious magnetic hysteresis loops and the mobility is enhanced. Meanwhile, the photoresponsive experiments are realized by irradiating all samples with a 360 nm light. Compared to magnetism, the effects of dopants on photoresponsive and relaxation properties are negligible because the behavior originates from SrTiO 3 substrates. This work paves a way for revealing and better controlling the magnetic properties of oxide heterointerfaces.

  1. Metalorganic solution deposition of lead zirconate titanate films onto an additively manufactured Ni-based superalloy

    International Nuclear Information System (INIS)

    Patel, T.; Khassaf, H.; Vijayan, S.; Bassiri-Gharb, N.; Aindow, M.; Alpay, S.P.; Hebert, R.J.

    2017-01-01

    Recent advances in additive manufacturing of high-temperature alloys for structural aerospace applications has led to interest in integrating additional functionality into such parts. Lead zirconate titanate (PZT) is a prototypical ferroelectric ceramic used as the electro-active material in many piezoelectric sensors and actuators. In this study, 300 nm thick PbZr_0_._2Ti_0_._8O_3 (PZT 20/80) films were grown using metalorganic solution deposition onto additively manufactured substrates of Inconel 718. The microstructures of the films and the nature of the film/substrate interfaces were characterized using a combination of X-ray diffraction and electron microscopy techniques. Electrical measurements were performed to determine the ferroelectric, dielectric, and conductive responses of the PZT films. Our findings show that the PZT films exhibit robust ferroelectricity characterized by well-defined polarization-applied electric field (P-E) hysteresis loops. The samples display internal bias of up to ∼40 kV/cm. The room temperature remnant polarization and the small signal dielectric permittivity are ∼70 μC/cm"2 and 205, respectively. The dielectric loss (tan δ) and the leakage current at 1 kHz are 9% and 1 nA at 1 V, respectively. We attribute the internal bias observed in the hysteresis loops and the overall large dielectric losses to the presence of an intermediate oxide layer at the PZT/Inconel interface, which forms during the high temperature crystallization of the ferroelectric film. These results show that it is possible to grow functional oxides with promising electrical properties onto additively manufactured metallic substrates.

  2. Study of grain boundary tunneling in barium-titanate ceramic films

    CERN Document Server

    Wong, H; Poon, M C

    1999-01-01

    The temperature and the electric-field dependences of the current-voltage characteristics and the low-frequency noise of barium-titanate ceramic films are studied. An abnormal field dependence is observed in the resistivity of BaTiO sub 3 materials with a small average grain size. In addition, experiments show that the low-frequency noise behaviors are governed by grain-boundary tunneling at room temperature and by trapping-detrapping of grain-boundary states at temperatures above the Curie point. Physical models for the new observations are developed. Results suggest that grain-boundary tunneling of carriers is as important as the double Schottky barrier in the current conduction in BaTiO sub 3 materials with small grain sizes.

  3. Multilayer bioactive glass/zirconium titanate thin films in bone tissue engineering and regenerative dentistry

    Directory of Open Access Journals (Sweden)

    Mozafari M

    2013-04-01

    Full Text Available Masoud Mozafari,1,2 Erfan Salahinejad,1,3 Vahid Shabafrooz,1 Mostafa Yazdimamaghani,1 Daryoosh Vashaee,4 Lobat Tayebi1,5 1Helmerich Advanced Technology Research Center, School of Materials Science and Engineering, Oklahoma State University, Tulsa, OK, USA; 2Biomaterials Group, Faculty of Biomedical Engineering (Center of Excellence, Amirkabir University of Technology, Tehran, Iran; 3Department of Materials Science and Engineering, School of Engineering, Shiraz University, Shiraz, Iran; 4Helmerich Advanced Technology Research Center, School of Electrical and Computer Engineering, Oklahoma State University, Tulsa, OK, USA; 5School of Chemical Engineering, Oklahoma State University, Tulsa, OK, USA Abstract: Surface modification, particularly coatings deposition, is beneficial to tissue-engineering applications. In this work, bioactive glass/zirconium titanate composite thin films were prepared by a sol-gel spin-coating method. The surface features of the coatings were studied by scanning electron microscopy, atomic force microscopy, and spectroscopic reflection analyses. The results show that uniform and sound multilayer thin films were successfully prepared through the optimization of the process variables and the application of carboxymethyl cellulose as a dispersing agent. Also, it was found that the thickness and roughness of the multilayer coatings increase nonlinearly with increasing the number of the layers. This new class of nanocomposite coatings, comprising the bioactive and inert components, is expected not only to enhance bioactivity and biocompatibility, but also to protect the surface of metallic implants against wear and corrosion. Keywords: bioactive glass, zirconium titanate, spin-coating, microstructural properties, bone/dental applications, tissue engineering

  4. Titanate nanotube thin films with enhanced thermal stability and high-transparency prepared from additive-free sols

    Energy Technology Data Exchange (ETDEWEB)

    Koroesi, Laszlo, E-mail: korosi@enviroinvest.hu [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertvaros utca 2, H-7632 Pecs (Hungary); Papp, Szilvia [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertvaros utca 2, H-7632 Pecs (Hungary); Hornok, Viktoria [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Oszko, Albert [Department of Physical Chemistry and Materials Science, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Petrik, Peter; Patko, Daniel; Horvath, Robert [Institute for Technical Physics and Materials Science MFA, Research Center for Natural Sciences, Konkoly-Thege ut 29-33, H-1121 Budapest (Hungary); Dekany, Imre [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary)

    2012-08-15

    Titanate nanotubes were synthesized from TiO{sub 2} in alkaline medium by a conventional hydrothermal method (150 Degree-Sign C, 4.7 bar). To obtain hydrogen titanates, the as-prepared sodium titanates were treated with either HCl or H{sub 3}PO{sub 4} aqueous solutions. A simple synthesis procedure was devised for stable titanate nanotube sols without using any additives. These highly stable ethanolic sols can readily be used to prepare transparent titanate nanotube thin films of high quality. The resulting samples were studied by X-ray diffraction, N{sub 2}-sorption measurements, Raman spectroscopy, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy and spectroscopic ellipsometry. The comparative results of using two kinds of acids shed light on the superior thermal stability of the H{sub 3}PO{sub 4}-treated titanate nanotubes (P-TNTs). X-ray photoelectron spectroscopy revealed that P-TNTs contains P in the near-surface region and the thermal stability was enhanced even at a low ({approx}0.5 at%) concentration of P. After calcination at 500 Degree-Sign C, the specific surface areas of the HCl- and H{sub 3}PO{sub 4}-treated samples were 153 and 244 m{sup 2} g{sup -1}, respectively. The effects of H{sub 3}PO{sub 4} treatment on the structure, morphology and porosity of titanate nanotubes are discussed. - Graphical Abstract: TEM picture (left) shows P-TNTs with diameters about 5-6 nm. Inset shows a stable titanate nanotube sol illuminated by a 532 nm laser beam. Due to the presence of the nanoparticles the way of the light is visible in the sol. Cross sectional SEM picture (right) as well as ellipsometry revealed the formation of optical quality P-TNT films with thicknesses below 50 nm. Highlights: Black-Right-Pointing-Pointer H{sub 3}PO{sub 4} treatment led to TNTs with high surface area even after calcination at 500 Degree-Sign C. Black-Right-Pointing-Pointer H{sub 3}PO{sub 4}-treated TNTs preserved their nanotube morphology up to 500

  5. Promoting Photocatalytic Overall Water Splitting by Controlled Magnesium Incorporation in SrTiO3 Photocatalysts.

    Science.gov (United States)

    Han, Kai; Lin, Yen-Chun; Yang, Chia-Min; Jong, Ronald; Mul, Guido; Mei, Bastian

    2017-11-23

    SrTiO 3 is a well-known photocatalyst inducing overall water splitting when exposed to UV irradiation of wavelengths water-splitting efficiency of the Mg:SrTiO x composites is up to 20 times higher compared to SrTiO 3 containing similar catalytic nanoparticles, and an apparent quantum yield (AQY) of 10 % can be obtained in the wavelength range of 300-400 nm. Detailed characterization of the Mg:SrTiO x composites revealed that Mg is likely substituting the tetravalent Ti ion, leading to a favorable surface-space-charge layer. This originates from tuning of the donor density in the cubic SrTiO 3 structure by Mg incorporation and enables high oxygen-evolution rates. Nevertheless, interfacing with an appropriate hydrogen evolution catalyst is mandatory and non-trivial to obtain high-performance in water splitting. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Magnetism and metal-insulator transition in oxygen deficient SrTiO3

    Science.gov (United States)

    Lopez-Bezanilla, Alejandro; Ganesh, P.; Littlewood, Peter

    2015-03-01

    We report new findings in the electronic structure and magnetism of oxygen vacancies in SrTiO3. By means of first-principles calculations we show that the appearance of magnetism in oxygen-deficient SrTiO3 is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. While an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state with emergent local moments. Strong local lattice distortions enhance the binding of this state. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient SrTiO3, which may have important implications in the design of switchable magneto-optic devices. AL-B and PBL were supported by DOE-BES under Contract No. DE-AC02-06CH11357. PG was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT- Battelle, LLC, for the US Department of Energy.

  7. Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

    International Nuclear Information System (INIS)

    Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

    2015-01-01

    Electron doped SrTiO 3 , a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO 3 systems show reasonably strong rectification even when SrTiO 3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO x in between the metal and n-SrTiO 3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO 3 ) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO 3 . The non-linear permittivity of n-SrTiO 3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors

  8. Temperature-dependent optical absorption of SrTiO3

    International Nuclear Information System (INIS)

    Kok, Dirk J.; Irmscher, Klaus; Naumann, Martin; Guguschev, Christo; Galazka, Zbigniew; Uecker, Reinhard

    2015-01-01

    The optical absorption edge and near infrared absorption of SrTiO 3 were measured at temperatures from 4 to 1703 K. The absorption edge decreases from 3.25 eV at 4 K to 1.8 eV at 1703 K and is extrapolated to approximately 1.2 eV at the melting point (2350 K). The transmission in the near IR decreases rapidly above 1400 K because of free carrier absorption and is about 50% of the room temperature value at 1673 K. The free carriers are generated by thermal excitation of electrons over the band gap and the formation of charged vacancies. The observed temperature-dependent infrared absorption can be well reproduced by a calculation based on simple models for the intrinsic free carrier concentration and the free carrier absorption coefficient. The measured red shift of the optical absorption edge and the rising free carrier absorption strongly narrow the spectral range of transmission and impede radiative heat transport through the crystal. These effects have to be considered in high temperature applications of SrTiO 3 -based devices, as the number of free carriers rises considerably, and in bulk crystal growth to avoid growth instabilities. Temperature dependent optical absorption edge of SrTiO 3 , measured, fitted, and extrapolated to the melting point. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.

    2013-12-12

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  10. Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

    Directory of Open Access Journals (Sweden)

    Shuxiang Wu

    2013-12-01

    Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  11. Persistent optically induced magnetism in oxygen-deficient strontium titanate.

    Science.gov (United States)

    Rice, W D; Ambwani, P; Bombeck, M; Thompson, J D; Haugstad, G; Leighton, C; Crooker, S A

    2014-05-01

    Strontium titanate (SrTiO3) is a foundational material in the emerging field of complex oxide electronics. Although its bulk electronic and optical properties are rich and have been studied for decades, SrTiO3 has recently become a renewed focus of materials research catalysed in part by the discovery of superconductivity and magnetism at interfaces between SrTiO3 and other non-magnetic oxides. Here we illustrate a new aspect to the phenomenology of magnetism in SrTiO3 by reporting the observation of an optically induced and persistent magnetization in slightly oxygen-deficient bulk SrTiO3-δ crystals using magnetic circular dichroism (MCD) spectroscopy and SQUID magnetometry. This zero-field magnetization appears below ~18 K, persists for hours below 10 K, and is tunable by means of the polarization and wavelength of sub-bandgap (400-500 nm) light. These effects occur only in crystals containing oxygen vacancies, revealing a detailed interplay between magnetism, lattice defects, and light in an archetypal complex oxide material.

  12. Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrate

    International Nuclear Information System (INIS)

    Brooks, K.G.; Reaney, I.M.; Klissurska, R.; Huang, Y.; Bursill, L.A.; Setter, N.

    1994-01-01

    The nucleation, growth and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, excess lead addition, and Nb dopant substitution are reported. The use of post pyrolysis oxygen anneals at temperatures in the regime of 350-450 deg C was found to strongly effect the kinetics of subsequent amorphous-pyrochlore perovskite crystallization by rapid thermal annealing. It has also allowed films of reproducible microstructure and textures (both (100) and (111)) to be prepared by rapid thermal annealing. It is suggested that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. The changes in Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization. Nb dopant was also found to influence the crystallization kinetics. 28 refs., 18 figs

  13. Temperature effect on the retention of U(VI) by SrTiO3

    International Nuclear Information System (INIS)

    Garcia Rosales, G.

    2007-11-01

    The purpose of this research was the study of the interaction mechanisms between U(VI) ions and SrTiO 3 surfaces versus pH and temperature: 25, 50, 75 and 90 C. Firstly, a physicochemical characterization was realized (DRX, MEB, FTIR) and the surface site density was determined. The potentiometric titration data were simulated, for each temperature, using the constant capacitance model and taking into account bath protonation of the ≡Sr-OH surface sites and deprotonation of the ≡Ti-OH ones (one pK a model). Both enthalpy and entropy changes, corresponding to the surface acid-base reactions, were evaluated using the van't Hoff relation. U(VI) was sorbed onto SrTiO 3 powder in the pH range 0.5-5.0 with an U(VI) initial concentration 1.10 -4 M. By TRLIFS two U(VI) complexes were detected associated with two lifetime values (60 ± 5 and 12 ± 2 μs at 25 C). The sorption edges were simulated using FITEQL 4.0 software. The surface complexation constants of the system SrTiO 3 /U(VI) between 25 and 90 C temperature range were thus obtained with the constant capacitance model considering two reactive surface sites. It reveals that two types of surface complex, namely [(≡SrOH)(≡TiOH)UO 2 ] 2+ and [(≡TiOH)(≡TiO)UO 2+ ] 2+ , are needed to properly describe the experimental observations. By application of the van't Hoff equation, Delta R S 0 and Delta R H 0 were obtained, which indicated an endothermic sorption process. Finally, an energy transfer study was realised by TRLIFS. The energy transfer between Tb 3+ and Eu 3+ ions sorbed onto SrTiO 3 powders were investigated. The results showed that the energy transfer between Tb 3+ and Eu 3+ is a non-radiative process and follows a dipole-dipole type interaction. A formalism based on the Dexter and the Inokuti-Hirayama theories was used to calculate the distances (2,7-3,4 Angstroms between Tb 3+ and Eu 3+ onto SrTiO 3 surface. (author)

  14. Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Melo, M.; Araújo, E. B., E-mail: eudes@dfq.feis.unesp.br [Departamento de Física e Química, Faculdade de Engenharia de Ilha Solteira, UNESP—Univ. Estadual Paulista, 15385-000 Ilha Solteira, SP (Brazil); Shvartsman, V. V. [Institute for Materials Science, University Duisburg-Essen, 45141 Essen (Germany); Shur, V. Ya. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Kholkin, A. L. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Department of Physics and CICECO—Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal)

    2016-08-07

    Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriers near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.

  15. Rapid Synthesis and Formation Mechanism of Core-Shell-Structured La-Doped SrTiO3 with a Nb-Doped Shell

    Directory of Open Access Journals (Sweden)

    Nam-Hee Park

    2015-07-01

    Full Text Available To provide a convenient and practical synthesis process for metal ion doping on the surface of nanoparticles in an assembled nanostructure, core-shell-structured La-doped SrTiO3 nanocubes with a Nb-doped surface layer were synthesized via a rapid synthesis combining a rapid sol-precipitation and hydrothermal process. The La-doped SrTiO3 nanocubes were formed at room temperature by a rapid dissolution of NaOH pellets during the rapid sol-precipitation process, and the Nb-doped surface (shell along with Nb-rich edges formed on the core nanocubes via the hydrothermal process. The formation mechanism of the core-shell-structured nanocubes and their shape evolution as a function of the Nb doping level were investigated. The synthesized core-shell-structured nanocubes could be arranged face-to-face on a SiO2/Si substrate by a slow evaporation process, and this nanostructured 10 μm thick thin film showed a smooth surface.

  16. Reduction of etching damage in lead-zirconate-titanate thin films with inductively coupled plasma

    International Nuclear Information System (INIS)

    Lim, Kyu-Tae; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

    2003-01-01

    In this work, we etched lead-zirconate-titanate (PZT) films with various additive gases (O 2 and Ar) in Cl 2 /CF 4 plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in O 2 or Ar added to Cl 2 /CF 4 were compared, the value of remanent polarization in O 2 added to Cl 2 /CF 4 plasma is higher than that in Ar added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added Cl 2 /CF 4 gas having mixing ratio of 8/2 and 110 nm/min for 10% O 2 added to that same gas mixture. In order to recover the ferroelectric properties of the PZT thin films after etching, we annealed the etched PZT thin films at 550 deg. C in an O 2 atmosphere for 10 min. From the hysteresis curves, leakage current, retention property, and switching polarization, the reduction of the etching damage and the recovery via the annealing turned out to be more effective when O 2 was added to Cl 2 /CF 4 than Ar. X-ray diffraction showed that the structural damage was lower when O 2 was added to Cl 2 /CF 4 and the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks

  17. Crystallization of sol-gel derived lead zirconate titanate thin films in argon and oxygen atmospheres

    International Nuclear Information System (INIS)

    Bursill, L.A.

    1994-01-01

    Electron diffraction and high-resolution electron microscopic techniques are applied to reveal the mechanisms of crystallization of 75 nm thin films of ferroelectric lead-zirconate-titanate (PZT). Sol-gel methods, followed by pyrolysis at 350 deg C, were used to provide a common starting point after which a variety of rapid-thermal annealing (RTA) experiments in the temperature range 400-700 deg C were made in argon, oxygen and nitrogen/hydrogen atmospheres. The results are interpreted in terms of the crystal chemical analysis, which points out that partial pressure of oxygen and heating rate are important experimental parameters which must be controlled if ferroelectric perovskite-type Pb 2 ZrTiO 6 , rather than pyrochlore-type Pb 2 ZrTiO 6+x , where O < X < 1 or -1 < X < O, is to be obtained after the RTA step. Thus significant improvements in the crystallization of perovskite-type PZT were clearly demonstrated by using argon atmospheres for the RTA step. The results have significance for the production of high-quality ferroelectric thin films, with improved switching and fatigue characteristics, since even small amounts of the pyrochlore phase prove detrimental for these properties. 18 refs., 1 tab., 10 figs

  18. Crystallization of sol-gel derived lead zirconate titanate thin films in argon and oxygen atmospheres

    Energy Technology Data Exchange (ETDEWEB)

    Bursill, L A [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Brooks, K G [Ecole Polytechnique Federale, Lausanne (Switzerland)

    1994-12-31

    Electron diffraction and high-resolution electron microscopic techniques are applied to reveal the mechanisms of crystallization of 75 nm thin films of ferroelectric lead-zirconate-titanate (PZT). Sol-gel methods, followed by pyrolysis at 350 deg C, were used to provide a common starting point after which a variety of rapid-thermal annealing (RTA) experiments in the temperature range 400-700 deg C were made in argon, oxygen and nitrogen/hydrogen atmospheres. The results are interpreted in terms of the crystal chemical analysis, which points out that partial pressure of oxygen and heating rate are important experimental parameters which must be controlled if ferroelectric perovskite-type Pb{sub 2}ZrTiO{sub 6}, rather than pyrochlore-type Pb{sub 2}ZrTiO{sub 6+x}, where O < X < 1 or -1 < X < O, is to be obtained after the RTA step. Thus significant improvements in the crystallization of perovskite-type PZT were clearly demonstrated by using argon atmospheres for the RTA step. The results have significance for the production of high-quality ferroelectric thin films, with improved switching and fatigue characteristics, since even small amounts of the pyrochlore phase prove detrimental for these properties. 18 refs., 1 tab., 10 figs.

  19. Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

    Science.gov (United States)

    Baniecki, John David

    This thesis examines the issues associated with incorporating the high dielectric constant material Barium Strontium Titanate (BSTO) in to the storage capacitor of a dynamic random access memory (DRAM). The research is focused on two areas: characterizing and understanding the factors that control charge retention in BSTO thin films and modifying the electrical properties using ion implantation. The dielectric relaxation of BSTO thin films deposited by metal-organic chemical vapor deposition (MOCVD) is investigated in the time and frequency domains. It is shown that the frequency dispersion of the complex capacitance of BSTO thin films can be understood in terms of a power-law frequency dependence from 1mHz to 20GHz. From the correspondence between the time and frequency domain measurements, it is concluded that the power-law relaxation currents extend back to the nano second regime of DRAM operation. The temperature, field, and annealing dependence of the dielectric relaxation currents are also investigated and mechanisms for the observed power law relaxation are explored. An equivalent circuit model of a high dielectric constant thin film capacitor is developed based on the electrical measurements and implemented in PSPICE. Excellent agreement is found between the experimental and simulated electrical characteristics showing the utility of the equivalent circuit model in simulating the electrical properties of high dielectric constant thin films. Using the equivalent circuit model, it is shown that the greatest charge loss due to dielectric relaxation occurs during the first read after a refresh time following a write to the opposite logic state for a capacitor that has been written to the same logic state for a long time (opposite state write charge loss). A theoretical closed form expression that is a function of three material parameters is developed which estimates the opposite state write charge loss due to dielectric relaxation. Using the closed form

  20. Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Wenbin, E-mail: cwb0201@163.com [Electromechanical Engineering College, Guilin University of Electronic Technology (China); McCarthy, Kevin G. [Department of Electrical and Electronic Engineering, University College Cork (Ireland); Copuroglu, Mehmet; O' Brien, Shane; Winfield, Richard; Mathewson, Alan [Tyndall National Institute, University College Cork (Ireland)

    2012-05-01

    This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 Degree-Sign C and 750 Degree-Sign C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

  1. Investigation on orientation, epitaxial growth and microstructure of a-axis-, c-axis-, (103)/(110)- and (113)-oriented YBa2Cu3O7-δ films prepared on (001), (110) and (111) SrTiO3 single crystal substrates by spray atomizing and coprecipitating laser chemical vapor deposition

    Science.gov (United States)

    Zhao, Pei; Wang, Ying; Huang, Zhi liang; Mao, Yangwu; Xu, Yuan Lai

    2015-04-01

    a-axis-, c-axis-, (103)/(110)- and (113)-oriented YBa2Cu3O7-δ (YBCO) films were pareared by spray atomizing and coprecipitating laser chemical vapor deposition. The surface of the a-axis-oriented YBCO film consisted of rectangular needle-like grains whose in-plane epitaxial growth relationship was YBCO [100] // STO [001] (YBCO [001] // STO [100]), and that of the c-axis-oriented YBCO film consisted of dense flat surface with epitaxial growth relationship of YBCO [001] // STO [001] (YBCO [100] //STO [100]). For the (103)/(110)-oriented and (113)-oriented YBCO film, they showed wedge-shaped and triangle-shaped grains, with corresponding in-plane epitaxial growth relationship of YBCO [110] // STO [110] (YBCO [010] // STO [010]) and YBCO [100] // STO [100] (YBCO [113] // STO [111], respectively.

  2. Effect of oxygen partial pressure on texture development in lead zirconate titanate thin films processed from metalorganic precursors

    International Nuclear Information System (INIS)

    Norton, Jarrod L.; Liedl, Gerald L.; Slamovich, Elliott B.

    1999-01-01

    Metalorganic liquid precursors were used to examine the effects of processing atmosphere on texture development in oriented Pb(Zr 0.60 Ti 0.40 )O 3 thin films. After removal of organic ligands via pyrolysis, the films were heated at 25 degree sign C/min in a 5% H 2 /Ar atmosphere until a switching temperature, after which the atmosphere was switched to pure oxygen. The films were heated to a maximum temperature of 650 degree sign C with switching temperatures ranging from 450 to 600 degree sign C. The degree of (111) orientation in the lead zirconate titanate (PZT) films increased with increasing switching temperature, resulting in highly textured (111) PZT films. These results suggest that atmosphere control plays a significant role in texture development during rapid thermal processing. (c) 1999 Materials Research Society

  3. A theoretical investigation of the influence of the surface effect on the ferroelectric property of strained barium titanate film

    Science.gov (United States)

    Fang, Chao; Liu, Wei Hua

    2017-07-01

    The influence of the surface effect on the ferroelectric property of strained barium titanate film has been investigated. In this study, based on time-dependent Ginsburg-Landau-Devonshire thermodynamic theory, the surface effects have been simulated by introducing a surface constant, which leads to the strained BaTiO3 film consisting of inner tetragonal core and gradient lattice strain layer. Further, surface effects produce a depolarization field which has a dominant effect on the ferroelectric properties of the films. The spontaneous polarization, dielectric properties and ferroelectric hysteresis loop of BaTiO3 film are calculated under different boundary conditions. Theoretical and experimental results for strained BaTiO3 film are compared and discussed.

  4. Transverse piezoelectric coefficient measurement of flexible lead zirconate titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dufay, T.; Guiffard, B.; Seveno, R. [LUNAM Université, Université de Nantes, IETR (Institut d' Électronique et de Télécommunications de Rennes), UMR CNRS 6164, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3 (France); Thomas, J.-C. [LUNAM Université, Université de Nantes-École Centrale Nantes, GeM (Institut de Recherche en Génie Civil et Ingénierie Mécanique), UMR CNRS 6183, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3 (France)

    2015-05-28

    Highly flexible lead zirconate titanate, Pb(Zr,Ti)O{sub 3} (PZT), thin films have been realized by modified sol-gel process. The transverse piezoelectric coefficient d{sub 31} was determined from the tip displacement of bending-mode actuators made of PZT cantilever deposited onto bare or RuO{sub 2} coated aluminium substrate (16 μm thick). The influence of the thickness of ruthenium dioxide RuO{sub 2} and PZT layers was investigated for Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3}. The modification of Zr/Ti ratio from 40/60 to 60/40 was done for 3 μm thick PZT thin films onto aluminium (Al) and Al/RuO{sub 2} substrates. A laser vibrometer was used to measure the beam displacement under controlled electric field. The experimental results were fitted in order to find the piezoelectric coefficient. Very large tip deflections of about 1 mm under low voltage (∼8 V) were measured for every cantilevers at the resonance frequency (∼180 Hz). For a given Zr/Ti ratio of 58/42, it was found that the addition of a 40 nm thick RuO{sub 2} interfacial layer between the aluminium substrate and the PZT layer induces a remarkable increase of the d{sub 31} coefficient by a factor of 2.7, thus corresponding to a maximal d{sub 31} value of 33 pC/N. These results make the recently developed PZT/Al thin films very attractive for both low frequency bending mode actuating applications and vibrating energy harvesting.

  5. Enhanced photocatalytic activity of SrTiO3 photocatalyst by topotactic preparation

    Science.gov (United States)

    Cao, Jiafeng; Huang, Xianshan; Liu, Yi; Wu, Jianguang; Ji, Yuexia

    2016-11-01

    Novel SrTiO3 (ST) photocatalysts with different shapes such as plates, rods and cubes were successfully synthesized based on a topotactic approach. The rod-like ST particles formed in situ at the plates show superior photocatalytic activities towards the decomposition of Rhodamine B than the plate-like and the cubic particles under visible-light irradiation, which could be attributed to the crystal orientation exposing highly active sites accompanied by the crystallite growth in molten salt. The results reveal an effective approach for fabrication of novel photocatalysts of perovskite structure with enhanced photocatalytic activities.

  6. Hydrogen molecule defect in proton-conductive SrTiO3 Perovskite

    Science.gov (United States)

    Onishi, Taku

    2017-11-01

    In proton-conductive SrTiO3 perovskite, no hydrogen molecule defect ideally exists. However, the unforeseen chemical reaction is often observed after the use of fuel cell. From the viewpoint of battery safety, we have investigated the effect of hydrogen molecule defect by molecular orbital analysis. When counter cation vacancy exists, the activation energy for hydrogen molecule migration was 1.39 - 1.50 eV, which is much smaller than the dissociation energy of hydrogen molecule. It implies that hydrogen molecule may migrate without its dissociation.

  7. Two-dimensional thermoelectric Seebeck coefficient of SrTiO3-based superlattices

    International Nuclear Information System (INIS)

    Ohta, Hiromichi

    2008-01-01

    This review provides the origin of the unusually large thermoelectric Seebeck coefficient vertical stroke S vertical stroke of a two-dimensional electron gas confined within a unit cell layer thickness (∝0.4 nm) of a SrTi 0.8 Nb 0.2 O 3 layer of artificial superlattices of SrTiO 3 /SrTi 0.8 Nb 0.2 O 3 [H. Ohta et al., Nature Mater. 6, 129 (2007)]. The vertical stroke S vertical stroke 2D values of the[(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) y ] 20 superlattice increase proportional to y -0.5 , and reach 290 μV K -1 (y=1) at room temperature, which is ∝5 times larger than that of the SrTi 0.8 Nb 0.2 O 3 bulk (vertical stroke S vertical stroke 3D =61 μVK -1 ), proving that the density of states in the ground state for SrTiO 3 increases in inverse proportion to y. The critical barrier thickness for quantum electron confinement is also clarified to be 6.25 nm (16 unit cells of SrTiO 3 ). Significant structural changes are not observed in the superlattice after annealing at 900 K in a vacuum. The value of vertical stroke S vertical stroke 2D of the superlattice gradually increases with temperature and reaches 450 μVK -1 at 900 K, which is ∝3 times larger than that of bulk SrTi 0.8 Nb 0.2 O 3 . These observations provide clear evidence that the [(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) 1 ] 20 superlattice is stable and exhibits a giant vertical stroke S vertical stroke even at high temperature. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Diversity of hydrogen configuration and its roles in SrTiO3−δ

    Directory of Open Access Journals (Sweden)

    Yoshiki Iwazaki

    2014-01-01

    Full Text Available As a source of carrier electron, various configurations of hydrogen in SrTiO3 are searched by using first-principles calculations. The most stable form of hydrogen is found to be H−, where doubly charged oxygen vacancy VO2+ changes into singly charged HO+. Most importantly, an additional H− is found to be weakly trapped by HO+, which completely neutralizes carrier electrons by forming (2HO0. These unexpected behaviors of hydrogen, which can explain reported experimental results, expand the role of the hydrogen in carrier-control technology in transition-metal oxides.

  9. Hydrogen impurity in SrTiO3: structure, electronic properties and migration

    International Nuclear Information System (INIS)

    Villamagua, Luis; Barreto, Rafael; Procel, Luis Miguel; Stashans, Arvids

    2007-01-01

    The present paper reports a computational investigation of the geometry and electronic structure as well as the migration of a hydrogen impurity in the cubic SrTiO 3 crystal. The study is done using an approach based on the Hartree-Fock theory and developed for periodic systems. It is found that the H impurity forms the so-called OH group at the equilibrium. Analysis of electron density within the defective region implies the enhancement in covalent chemical bonding. A possible defect migration has been also investigated

  10. EXAFS Study of Disorder in SrTiO3 Perovskite

    International Nuclear Information System (INIS)

    Kodre, Alojz; Arcon, Iztok; Gomilsek, Jana Padeznik; Zalar, Bostjan

    2007-01-01

    Ti K-edge EXAFS spectra of SrTiO3 at room temperature and at N2 boiling point are measured to detect the Ti ion displacement above and below the antiferrodistortive phase transition occurring at Tc = 105 K. The data yield a definite value of the displacement, only slightly dependent on the temperature. The sensitive dependence of the amplitude of Ti-O-Ti focusing paths on the scattering angle is used to infer the correlation of Ti displacements. A preference to alternating displacements is indicated

  11. Thermoelectric performance enhancement of SrTiO3 by Pr doping

    KAUST Repository

    Kahaly, M. Upadhyay; Schwingenschlö gl, Udo

    2014-01-01

    We investigate Pr doping at the Sr site as a possible route to enhance the thermoelectric behavior of SrTiO3-based materials, using first principles calculations in full-potential density functional theory. The effects of the Pr dopant on the local electronic structure and resulting transport properties are compared to common Nb doping. We demonstrate a substantial enhancement of the thermoelectric figure of merit and develop an explanation for the positive effects, which opens new ways for materials optimization by substitutional doping at the perovskite B site. © 2014 the Partner Organisations.

  12. Ferroelectricity of strained SrTiO3 in lithium tetraborate glass-nanocomposite and glass-ceramic

    Science.gov (United States)

    Abdel-Khalek, E. K.; Mohamed, E. A.; Kashif, I.

    2018-02-01

    Glass-nanocomposite (GNCs) sample of the composition [90Li2B4O7-10SrTiO3] (mol %) was prepared by conventional melt quenching technique. The glassy phase and the amorphous nature of the GNCs sample were identified by Differential thermal analysis (DTA) and X-ray diffraction (XRD) studies, respectively. DTA of the GNCs exhibits sharp and broad exothermic peaks which represent the crystallization of Li2B4O7 and SrTiO3, respectively. The tetragonal Li2B4O7 and tetragonal SrTiO3 crystalline phases in glass-ceramic (GC) were identified by XRD and scanning electron microscopic (SEM). The strain tetragonal SrTiO3 phase in GNCs and GC has been confirmed by SEM. The values of crystallization activation energies (Ec1 and Ec2) for the first and second exothermic peaks are equal to 174 and 1452 kJ/mol, respectively. The Ti3+ ions in tetragonal distorted octahedral sites in GNCs were identified by optical transmission spectrum. GNCs and GC samples exhibit broad dielectric anomalies at 303 and 319 K because of strained SrTiO3 ferroelectric, respectively.

  13. Contributions of conduction band offset to the enhanced separation efficiency of photoinduced charges for SrTiO3/Bi2O3 heterojunction semiconductor

    International Nuclear Information System (INIS)

    Zhang, Zhenlong; Zhu, Jichun; Li, Shengjun; Mao, Yanli

    2014-01-01

    SrTiO 3 /Bi 2 O 3 heterojunction semiconductor was prepared and characterized by X-ray diffraction, UV–vis absorption spectrum, and scanning electron microscope, surface photovoltage spectroscopy, and photoluminescence spectroscopy. The surface photovoltage spectra indicate that the separation efficiency of photoinduced charges for SrTiO 3 /Bi 2 O 3 was enhanced compared with that of SrTiO 3 or Bi 2 O 3 . The energy band diagram of SrTiO 3 /Bi 2 O 3 heterojunction was directly determined with X-ray photoelectron spectroscopy, and the conduction band offset between SrTiO 3 and Bi 2 O 3 was quantified to be 0.28±0.03 eV. The photoluminescence spectra display that the recombination rate of photoinduced carriers for SrTiO 3 /Bi 2 O 3 decreases compared with that of SrTiO 3 or Bi 2 O 3 , which is mainly due to the energy levels matching between them. Therefore the enhanced separation efficiency of photoinduced charges is resulting from the energy difference between the conduction band edges of SrTiO 3 and Bi 2 O 3 . -- Graphical abstract: Enhanced separation efficiency for SrTiO 3 /Bi 2 O 3 is resulting from the energy difference between the conduction band edges. Highlights: ●Heterojunction semiconductor of SrTiO 3 /Bi 2 O 3 was prepared. ●SrTiO 3 /Bi 2 O 3 presents enhanced separation efficiency. ●Conduction band offset between SrTiO 3 and Bi 2 O 3 is quantified. ●Recombination rate of SrTiO 3 /Bi 2 O 3 decreases compared with single phases

  14. How Correlated is the FeSe /SrTiO3 System?

    Science.gov (United States)

    Mandal, Subhasish; Zhang, Peng; Ismail-Beigi, Sohrab; Haule, K.

    2017-08-01

    Recent observation of ˜10 times higher critical temperature in a FeSe monolayer compared with its bulk phase has drawn a great deal of attention because the electronic structure in the monolayer phase appears to be different than bulk FeSe. Using a combination of density functional theory and dynamical mean field theory, we find electronic correlations have important effects on the predicted atomic-scale geometry and the electronic structure of the monolayer FeSe on SrTiO3 . The electronic correlations are dominantly controlled by the Se-Fe-Se angle either in the bulk phase or the monolayer phase. But the angle sensitivity increases and the orbital differentiation decreases in the monolayer phase compared to the bulk phase. The correlations are more dependent on Hund's J than Hubbard U . The observed orbital selective incoherence to coherence crossover with temperature confirms the Hund's metallic nature of the monolayer FeSe. We also find electron doping by oxygen vacancies in SrTiO3 increases the correlation strength, especially in the dx y orbital by reducing the Se-Fe-Se angle.

  15. Hole localization, migration, and the formation of peroxide anion in perovskite SrTiO3

    Science.gov (United States)

    Chen, Hungru; Umezawa, Naoto

    2014-07-01

    Hybrid density functional calculations are carried out to investigate the behavior of holes in SrTiO3. As in many other oxides, it is shown that a hole tend to localize on one oxygen forming an O- anion with a concomitant lattice distortion; therefore a hole polaron. The calculated emission energy from the recombination of the localized hole and a conduction-band electron is about 2.5 eV, in good agreement with experiments. Therefore the localization of the hole or self-trapping is likely to be responsible for the green photoluminescence at low temperature, which was previously attributed to an unknown defect state. Compared to an electron, the calculated hole polaron mobility is three orders of magnitude lower at room temperature. In addition, two O- anions can bind strongly to form an O22- peroxide anion. No electronic states associated with the O22- peroxide anion are located inside the band gap or close to the band edges, indicating that it is electronically inactive. We suggest that in addition to the oxygen vacancy, the formation of the O22- peroxide anion can be an alternative to compensate acceptor doping in SrTiO3.

  16. Large piezoelectricity in electric-field modified single crystals of SrTiO3

    Science.gov (United States)

    Khanbabaee, B.; Mehner, E.; Richter, C.; Hanzig, J.; Zschornak, M.; Pietsch, U.; Stöcker, H.; Leisegang, T.; Meyer, D. C.; Gorfman, S.

    2016-11-01

    Defect engineering is an effective and powerful tool to control the existing material properties and produce completely new ones, which are symmetry-forbidden in a defect-free crystal. For example, the application of a static electric field to a single crystal of SrTiO3 forms a strained near-surface layer through the migration of oxygen vacancies out of the area beneath the positively charged electrode. While it was previously shown that this near-surface phase holds pyroelectric properties, which are symmetry-forbidden in centrosymmetric bulk SrTiO3, this paper reports that the same phase is strongly piezoelectric. We demonstrate the piezoelectricity of this phase through stroboscopic time-resolved X-ray diffraction under alternating electric field and show that the effective piezoelectric coefficient d33 ranges between 60 and 100 pC/N. The possible atomistic origins of the piezoelectric activity are discussed as a coupling between the electrostrictive effect and spontaneous polarization of this near-surface phase.

  17. Electrochemical characterization and redox behavior of Nb-doped SrTiO3

    DEFF Research Database (Denmark)

    Blennow Tullmar, Peter; Kammer Hansen, Kent; Wallenberg, L. Reine

    2009-01-01

    Sr-vacancy compensated Nb-doped SrTiO3 with the nominal composition Sr0.94Ti0.9Nb0.1O3 has been evaluated as a solid oxide fuel cell (SOFC) anode material in terms of redox stability and electrochemical properties. Sr0.94Ti0.9Nb0.1O3 has been synthesized with a recently developed modified glycine......-nitrate process. The phase purity and redox behavior have been analyzed with XRD and TGA. The electrochemical properties of Sr0.94Ti0.9Nb0.1O3 and a composite electrode of Sr0.94Ti0.9Nb0.1O3/YSZ have been investigated by electrochemical impedance spectroscopy (EIS) on cone shaped electrodes and on electrodes...... in a symmetrical cell configuration. The experiments indicated that the Nb-doped SrTiO3 electrodes were redox stable and showed a potential ability to be used as a part of a SOFC anode. The electrochemical activity appeared to be governed by the concentration of defect species (especially Ti3+ and V-0...

  18. Adsorption of UO22+ in surfaces of SrTiO3

    International Nuclear Information System (INIS)

    Ortiz O, H.B.; Ordonez R, E.; Fernandez V, S.M.

    2005-01-01

    The internationally accepted solution in the administration of the high level radioactive residuals is the multi barrier deep geologic storage which should guarantee that do not exist flights neither transfer of residuals to the atmosphere in time periods of at least 10,000 years. In this confinement type exists the interest to study materials that can be used as engineering barriers as well as the diverse interaction phenomena between these and the radionuclides. In this work it is presented the physicochemical characterization and evaluation of the surface properties and of adsorption of U(VI) in form of UO 2 (NO 3 ) 2 on the SrTiO 3 like possible candidate for contention barrier in the deep geologic confinement. The made studies showed that the SrTiO 3 is stable to temperatures between 0 and 800 C. At the same time it could settle down that the maximum sorption percentages are reached to near pH to the isoelectric point, where chemical species prevail in solution of the type UO 2 (X) - . (Author)

  19. Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3

    Science.gov (United States)

    Trier, Felix; Reich, K. V.; Christensen, Dennis Valbjørn; Zhang, Yu; Tuller, Harry L.; Chen, Yunzhong; Shklovskii, B. I.; Pryds, Nini

    2017-08-01

    Metallic LaAlO3/SrTiO3 (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, ns, is poorly understood. Here, we derive a simple expression for the three-dimensional electron density near the interface, n3 D , as a function of ns and find that the mobility for LAO/STO-based interfaces depends on n3 D in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with N ≃5 ×1018 cm-3 background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons n3 DN , the mobility collapses because scattering happens on n3 D intentionally introduced donors. For LAO/STO, the polar catastrophe which provides electrons is not supposed to provide an equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO, the polar catastrophe model should be revisited.

  20. Hierarchical nanoparticle morphology for platinum supported on SrTiO3 (0 0 1): A combined microscopy and X-ray scattering study

    International Nuclear Information System (INIS)

    Christensen, Steven T.; Lee, Byeongdu; Feng Zhenxing; Hersam, Mark C.; Bedzyk, Michael J.

    2009-01-01

    The morphology of metal nanoparticles supported on oxide substrates plays an important role in heterogeneous catalysis and in the nucleation of thin films. For platinum evaporated onto SrTiO 3 (0 0 1) and vacuum annealed we find an unexpected growth formation of Pt nanoparticles that aggregate into clusters without coalescence. This hierarchical nanoparticle morphology with an enhanced surface-to-volume ratio for Pt is analyzed by grazing incidence small-angle X-ray scattering (GISAXS), X-ray fluorescence (XRF), atomic force microscopy (AFM) and high-resolution scanning electron microscopy (SEM). The nanoparticle constituents of the clusters measure 2-4 nm in size and are nearly contiguously spaced where the average edge-to-edge spacing is less than 1 nm. These particles make up the clusters, which are 10-50 nm in diameter and are spaced on the order of 100 nm apart.

  1. Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

    KAUST Repository

    Han, Wei

    2013-07-08

    There has been much interest in the injection and detection of spin-polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate single crystals and La-doped strontium titanate epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ∼100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the strontium titanate has a strong temperature dependence. This behaviour and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/strontium titanate interfaces, perhaps related to the formation of doping induced Ti 3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material. © 2013 Macmillan Publishers Limited. All rights reserved.

  2. Electric field effects in graphene/LaAlO3/SrTiO3 heterostructures and nanostructures

    Directory of Open Access Journals (Sweden)

    Mengchen Huang

    2015-06-01

    Full Text Available We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

  3. Quantitative analysis of UV excitation bands for red emissions in Pr3+-doped CaTiO3, SrTiO3 and BaTiO3 phosphors by peak fitting

    International Nuclear Information System (INIS)

    Fujiwara, Rei; Sano, Hiroyuki; Shimizu, Mikio; Kuwabara, Makoto

    2009-01-01

    A quantitative spectral analysis of the ultraviolet (UV) broad excitation bands, which are located in the range 300-400 nm, for red emissions at around 610 nm in Pr-doped CaTiO 3 , SrTiO 3 :Al and BaTiO 3 :Mg phosphors has been carried out using a peak fitting technique. The obtained results demonstrate that the UV broad band of CaTiO 3 :Pr consists of four primary excitation bands centered around 330, 335, 365 and 380 nm and those of both SrTiO 3 :Al and BaTiO 3 :Mg consist of three primary bands centered around 310, 345 and 370 nm. Based on the behavior patterns and the values of the respective primary excitation bands' parameters, i.e. center gravity (λ top ), maximum height (I max ) and full-width at half-maximum (FWHM), the UV-to-red relaxation processes in these titanate phosphors can be explained to be essentially the same, except for the existence of an additional relaxation pathway via electron-trap states in CaTiO 3 :Pr, which gives a characteristic shape of its UV excitation spectrum in the wavelength range of >360 nm

  4. Thermal infrared and microwave absorbing properties of SrTiO3/SrFe12O19/polyaniline nanocomposites

    International Nuclear Information System (INIS)

    Hosseini, Seyed Hossein; Zamani, Parisa; Mousavi, S.Y.

    2015-01-01

    Graphical abstract: We have developed a new perspective of applications and properties of conducting polymers. The combination of absorption ability prepared nanocomposites in the present of PANI display a great potential in organization of shielding structures into thermal IR and microwave. Further investigations using other conducting polymers to demonstrate their capability for advance thermal IR and microwave shielding devices is under way. The application of these samples may improve the IR thermographic detection, catalysis, sensors, magnetic data storage, electromagnetic resonance wave absorption, photonic crystals, and microelectronic devices and military aspects. - Highlights: • The SrTiO 3 /SrFe 12 O 19 /PANI exhibited electric and electromagnetic properties. • The SrTiO 3 /SrFe 12 O 19 /PANI has shielding structures into thermal IR and microwave. • Increasing weight ratios and thicknesses will increase thermal IR ability. • Increasing weight ratios and thicknesses will increase microwave absorption ability. - Abstract: Polyaniline (PANI) as a unique polymer that also has electromagnetic absorption used as the substrate. In this research, SrTiO 3 was synthesized as IR absorbent and core and then SrFe 12 O 19 as microwave absorbent was prepared on SrTiO 3 via co-precipitation method as the first shell. As the next step, PANI was coated on SrTiO 3 /SrFe 12 O 19 nanoparticles via in situ polymerization by multi core–shell structures (SrTiO 3 /SrFe 12 O 19 /PANI). Nanometer size and structures of samples were measured by TEM, XRD and FTIR. Morphology of nanocomposite was showed by SEM images. The magnetic and electric properties were also performed by VSM and four probe techniques. Thermal infrared (IR) absorption and microwave reflection loss of nanocomposites were investigated at 10–40 μm and 8–12 GHz, IR and microwave frequencies, respectively. The results showed that the SrTiO 3 /SrFe 12 O 19 /PANI nanocomposites have good compatible electric and magnetic properties and hence the microwave absorbency shows wide bandwidth properties. The infrared thermal image testing showed that the function of infrared thermal imaging was optimized by increasing SrTiO 3 /SrFe 12 O 19 as core and independent to increasing PANI as the final shell

  5. Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

    Science.gov (United States)

    Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

    2018-02-01

    Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

  6. Sintering and Electrical Characterization of La and Nb Co‐doped SrTiO3 Electrode Materials for Solid Oxide Cell Applications

    DEFF Research Database (Denmark)

    Sudireddy, Bhaskar Reddy; Agersted, Karsten

    2014-01-01

    Single‐phase lanthanum and niobium co‐doped strontium titanate (Sr1–3x/2LaxTi0.9Nb0.1O3; x = 0–0.02) ceramics were prepared. Dilatometry in reducing atmosphere showed an increase in the sintering rate and sintered density with an increase in La amount. Microscopy of fractured surfaces of sintered...... samples showed that the average grain size increased drastically in reducing conditions with increasing La content (and associated A‐site vacancies). By incorporating 2 mol.% La, the electronic conductivity significantly improved from 80 to 135 S cm−1 at 1,000 °C, and even larger improvements were...... observed at lower temperatures. These observations demonstrate the flexibility in tailoring the microstructure and electronic transport properties by doping small amounts of La into the Nb‐doped SrTiO3 and show that Sr1–3x/2LaxTi0.9Nb0.1O3 is a potential electrode material for solid oxide cells....

  7. Ion channeling study of lattice distortions in chromium-doped SrTiO3 crystals

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Vacík, Jiří; Dejneka, Alexandr; Trepakov, Vladimír; Jastrabík, Lubomír

    2013-01-01

    Roč. 55, č. 7 (2013), s. 1431-1437 ISSN 1063-7834 R&D Projects: GA ČR(CZ) GAP107/11/1856; GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/1941 Grant - others:GA MŠk(CZ) ED2.1.00/03.0058 Program:ED Institutional support: RVO:68378271 ; RVO:61389005 Keywords : ion channeling * lattice distortions * SrTiO3 Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 0.782, year: 2013 http://link.springer.com/article/10.1134%2FS1063783413070202

  8. Modification of SrTiO3 single-crystalline surface after plasma flow treatment

    Energy Technology Data Exchange (ETDEWEB)

    Levin, Alexandr A.; Weissbach, Torsten; Leisegang, Tilmann; Meyer, Dirk C. [Institut fuer Strukturphysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Kulagin, Nikolay A. [Kharkiv National University for Radioelectronics, av. Shakespeare 6-48, 61045 Kharkiv (Ukraine); Langer, Enrico [Institut fuer Festkoerperphysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

    2009-07-01

    Surface of pure and transition metal-doped SrTiO3(STO) single crystals before and after hydrogen plasma-flow treatment (energy of 5..20 J/cm2) is investigated by wide-angle X-ray diffraction (WAXRD), fluorescence X-ray absorption near edge structure (XANES) and scanning electron microscopy (SEM) techniques. Plasma treatment results in the formation of a textured polycrystalline layer at the surface of the single-crystalline samples with different orientation. The formation of the quasi-ordered structures consisting of nanoscale-sized pyramids is observed by SEM. XANES evidences the change of the valency of the part of Ti4+ to Ti3+ due to the plasma treatment. The data obtained together with results of X-ray spectroscopy measurements gives evidences of the change of stoichiometry of the STO samples resulting in a change of their physical properties after plasma treatment.

  9. The surface structure of SrTiO3 at high temperatures under influence of oxygen

    International Nuclear Information System (INIS)

    Hesselberth, M. B. S.; Molen, S. J. van der; Aarts, J.

    2014-01-01

    We use low energy electron microscopy to investigate the structure of the SrTiO 3 (001) surface at elevated temperatures and different oxygen pressures. Upon varying the temperature between 500 °C and 900 °C in oxygen pressures ranging from 10 −9 millibar to 10 −4 millibar, two surface transitions are found to be present. The lower temperature (1 × 1) → (2 × 1) transition that is known to occur in ultrahigh vacuum can be reversed by increasing the oxygen pressure. At higher temperatures, we observe a (2 × 1) → disordered (1 × 1) transition which is irreversible in the experimental parameter range. The observations are expected to have a strong bearing on the growth of interface structures

  10. Carrier density independent scattering rate in SrTiO3-based electron liquids.

    Science.gov (United States)

    Mikheev, Evgeny; Raghavan, Santosh; Zhang, Jack Y; Marshall, Patrick B; Kajdos, Adam P; Balents, Leon; Stemmer, Susanne

    2016-02-10

    We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T(n) (T is the temperature and n ≤ 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (EF). We discuss that the behavior is very similar to systems traditionally identified as non-Fermi liquids (n density-independent scattering rates have been observed. The results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory.

  11. Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics

    KAUST Repository

    Ozdogan, K.

    2012-03-08

    We study epitaxial SrTiO3 interfaced with Nb-doped SrTi1-x Nb x O3 (x = 0, 0.125, 0.25, 0.375, and 0.5) by full-potential density functional theory. From the electronic band structures obtained by our ab-initio calculations we determine the dependence of the induced metallicity on the Nb concentration. We obtain a monotonous increase of the carrier density with the Nb concentration. The results are confirmed by experiments for SrTi0.88Nb0.12O3 and SrTi0.8Nb0.2O3, demonstrating the predictive power and limitations of our theoretical approach. We also show that the Seebeck coefficient decreases monotonously with increasing temperature.

  12. Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics

    KAUST Repository

    Ozdogan, K.; Upadhyay Kahaly, M.; Sarath Kumar, S. R.; Alshareef, Husam N.; Schwingenschlö gl, Udo

    2012-01-01

    We study epitaxial SrTiO3 interfaced with Nb-doped SrTi1-x Nb x O3 (x = 0, 0.125, 0.25, 0.375, and 0.5) by full-potential density functional theory. From the electronic band structures obtained by our ab-initio calculations we determine the dependence of the induced metallicity on the Nb concentration. We obtain a monotonous increase of the carrier density with the Nb concentration. The results are confirmed by experiments for SrTi0.88Nb0.12O3 and SrTi0.8Nb0.2O3, demonstrating the predictive power and limitations of our theoretical approach. We also show that the Seebeck coefficient decreases monotonously with increasing temperature.

  13. Processing/structure/property Relationships of Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Application.

    Science.gov (United States)

    Peng, Cheng-Jien

    The purpose of this study is to see the application feasibility of barium strontium titanate (BST) thin films on ultra large scale integration (ULSI) dynamic random access memory (DRAM) capacitors through the understanding of the relationships among processing, structure and electrical properties. Thin films of BST were deposited by multi-ion -beam reactive sputtering (MIBERS) technique and metallo -organic decomposition (MOD) method. The processing parameters such as Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness and doping concentration were correlated with the structure and electric properties of the films. Some effects of secondary low-energy oxygen ion bombardment were also examined. Microstructures of BST thin films could be classified into two types: (a) Type I structures, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing, and (b) columnar structure (Type II) which remained even after high temperature annealing, for well-crystallized films deposited at high substrate temperatures. Type I films showed Curie-von Schweidler response, while Type II films showed Debted type behavior. Type I behavior may be attributed to the presence of a high density of disordered grain boundaries. Two types of current -voltage characteristics could be seen in non-bombarded films depending on the chemistry of the films (doped or undoped) and substrate temperature during deposition. Only the MIBERS films doped with high donor concentration and deposited at high substrate temperature showed space-charge -limited conduction (SCLC) with discrete shallow traps embedded in trap-distributed background at high electric field. All other non-bombarded films, including MOD films, showed trap-distributed SCLC behavior with a slope of {~}7.5-10 due to the presence of grain boundaries through film thickness or traps induced by unavoidable acceptor impurities in the films. Donor-doping could

  14. Major enhancement of the thermoelectric performance in Pr/Nb-doped SrTiO3 under strain

    KAUST Repository

    Amin, B.; Alshareef, Husam N.; Schwingenschlö gl, Udo; Singh, Nirpendra; Tritt, T. M.

    2013-01-01

    site generate n-type doping and thus improve the thermoelectric performance as compared to pristine SrTiO3. Further enhancement is achieved by the application of strain, for example, of the Seebeck coefficient by 21% for Sr0.95Pr0.05TiO3 and 10% for Sr

  15. Thermodynamic and kinetic properties of hydrogen defect pairs in SrTiO3 from density functional theory

    DEFF Research Database (Denmark)

    Bork, Nicolai Christian; Bonanos, Nikolaos; Rossmeisl, Jan

    2011-01-01

    A density functional theory investigation of the thermodynamic and kinetic properties of hydrogen–hydrogen defect interactions in the cubic SrTiO3 perovskite is presented. We find a net attraction between two hydrogen atoms with an optimal separation of ∼2.3 Å. The energy gain is ca. 0.33 eV comp...

  16. Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

    KAUST Repository

    Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Darroudi, Taghi; Zeng, Xiaoyu; Alshareef, Husam N.; Tritt, Terry M.

    2015-01-01

    We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

  17. Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

    KAUST Repository

    Mehdizadeh Dehkordi, Arash

    2015-08-15

    We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

  18. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar; Schwingenschlö gl, Udo

    2011-01-01

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions

  19. Stability and electronic structure studies of LaAlO3/SrTiO3 (110) heterostructures

    International Nuclear Information System (INIS)

    Du Yan-Ling; Wang Chun-Lei; Li Ji-Chao; Xu Pan-Pan; Zhang Xin-Hua; Liu Jian; Su Wen-Bin; Mei Liang-Mo

    2014-01-01

    The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAlO 3 /SrTiO 3 (110). By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAlO 3 /SrTiO 3 (110) heterostructure, the Ti—O octahedron distortions cause the Ti t 2g orbitals to split into the two-fold degenerate d xz /d yz and nondegenerate d xy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t 2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaAlO 3 and SrTiO 3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAlO 3 /SrTiO 3 (110). (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. A versatile light-switchable nanorod memory: Wurtzite ZnO on perovskite SrTiO3

    KAUST Repository

    Kumar, Anup Bera; Peng, Haiyang; Lourembam, James; Shen, Youde; Sun, Xiaowei; Wu, Tao

    2013-01-01

    heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of Zn

  1. Parallel charge sheets of electron liquid and gas in La0.5Sr0.5TiO3/SrTiO3 heterostructures

    Science.gov (United States)

    Renshaw Wang, X.; Sun, L.; Huang, Z.; Lü, W. M.; Motapothula, M.; Annadi, A.; Liu, Z. Q.; Zeng, S. W.; Venkatesan, T.; Ariando

    2015-12-01

    We show here a new phenomenon in La0.5Sr0.5TiO3/SrTiO3 (LSTO/STO) heterostructures; that is a coexistence of three-dimensional electron liquid (3DEL) and 2D electron gas (2DEG), separated by an intervening insulating LSTO layer. The two types of carriers were revealed through multi-channel analysis of the evolution of nonlinear Hall effect as a function of film thickness, temperature and back gate voltage. We demonstrate that the 3D electron originates from La doping in LSTO film and the 2D electron at the surface of STO is due to the polar field in the intervening insulating layer. As the film thickness is reduced below a critical thickness of 6 unit cells (uc), an abrupt metal-to-insulator transition (MIT) occurs without an intermediate semiconducting state. The properties of the LSTO layer grown on different substrates suggest that the insulating phase of the intervening layer is a result of interface strain induced by the lattice mismatch between the film and substrate. Further, by fitting the magnetoresistance (MR) curves, the 6 unit cell thick LSTO is shown to exhibit spin-orbital coupling. These observations point to new functionalities, in addition to magnetism and superconductivity in STO-based systems, which could be exploited in a multifunctional context.

  2. Origin of thermally stable ferroelectricity in a porous barium titanate thin film synthesized through block copolymer templating

    Directory of Open Access Journals (Sweden)

    Norihiro Suzuki

    2017-07-01

    Full Text Available A porous barium titanate (BaTiO3 thin film was chemically synthesized using a surfactant-assisted sol-gel method in which micelles of amphipathic diblock copolymers served as structure-directing agents. In the Raman spectrum of the porous BaTiO3 thin film, a peak corresponding to the ferroelectric tetragonal phase was observed at around 710 cm−1, and it remained stable at much higher temperature than the Curie temperature of bulk single-crystal BaTiO3 (∼130 °C. Measurements revealed that the ferroelectricity of the BaTiO3 thin film has high thermal stability. By analyzing high-resolution transmission electron microscope images of the BaTiO3 thin film by the fast Fourier transform mapping method, the spatial distribution of stress in the BaTiO3 framework was clearly visualized. Careful analysis also indicated that the porosity in the BaTiO3 thin film introduced anisotropic compressive stress, which deformed the crystals. The resulting elongated unit cell caused further displacement of the Ti4+ cation from the center of the lattice. This displacement increased the electric dipole moment of the BaTiO3 thin film, effectively enhancing its ferro(piezoelectricity.

  3. Direct Observation of Room-Temperature Stable Magnetism in LaAlO3/SrTiO3 Heterostructures.

    Science.gov (United States)

    Yang, Ming; Ariando; Zhou, Jun; Asmara, Teguh Citra; Krüger, Peter; Yu, Xiao Jiang; Wang, Xiao; Sanchez-Hanke, Cecilia; Feng, Yuan Ping; Venkatesan, T; Rusydi, Andrivo

    2018-03-21

    Along with an unexpected conducting interface between nonmagnetic insulating perovskites LaAlO 3 and SrTiO 3 (LaAlO 3 /SrTiO 3 ), striking interfacial magnetisms have been observed in LaAlO 3 /SrTiO 3 heterostructures. Interestingly, the strength of the interfacial magnetic moment is found to be dependent on oxygen partial pressures during the growth process. This raises an important, fundamental question on the origin of these remarkable interfacial magnetic orderings. Here, we report a direct evidence of room-temperature stable magnetism in a LaAlO 3 /SrTiO 3 heterostructure prepared at high oxygen partial pressure by using element-specific soft X-ray magnetic circular dichroism at both Ti L 3,2 and O K edges. By combining X-ray absorption spectroscopy at both Ti L 3,2 and O K edges and first-principles calculations, we qualitatively ascribe that this strong magnetic ordering with dominant interfacial Ti 3+ character is due to the coexistence of LaAlO 3 surface oxygen vacancies and interfacial (Ti Al -Al Ti ) antisite defects. On the basis of this new understanding, we revisit the origin of the weak magnetism in LaAlO 3 /SrTiO 3 heterostructures prepared at low oxygen partial pressures. Our calculations show that LaAlO 3 surface oxygen vacancies are responsible for the weak magnetism at the interface. Our result provides direct evidence on the presence of room-temperature stable magnetism and a novel perspective to understand magnetic and electronic reconstructions at such strategic oxide interfaces.

  4. Rectifying characteristics and magnetoresistance in La0.9Sr0.1MnO3/Nb-doped SrTiO3 heterojunctions

    International Nuclear Information System (INIS)

    Luo, Z.; Gao, J.

    2007-01-01

    Manganite-based heterojunctions have attracted lots of attention as one of the most promising practical applications of colossal magnetoresistance materials. In this work, heterojunctions were fabricated by depositing La 0.9 Sr 0.1 MnO 3 (LSMO) films on substrates of 0.7 wt.% Nb-doped SrTiO 3 using pulsed laser deposition technique. X-ray diffraction spectra confirmed that the grown films are of single phase and have an orientation with the c-axis perpendicular to the substrate surface. As temperature decreases, the resistivity of LSMO films first increases gradually and then increases abruptly at temperature lower than 150 K. These junctions showed clear rectifying characteristics and strong temperature dependent current-voltage relation. Diffusion voltage decreases as temperature increases. Under forward bias, current is proportion to exp(eV/nkT). Ideal factor increases quickly and tunneling current plays more and more important role as temperature decreases. At 50 K, tunneling current becomes nearly dominant. Large magnetoresistance was observed. The sign and value of such magnetoresistance depends on the direction and value of current

  5. Tunable magnetism in the LaAlO3/SrTiO3 heterostructure: Insights from first-principles calculations

    Science.gov (United States)

    Xue, Yuanbin; Zhao, Jinzhu; Shan, Yueyue; Xu, Hu

    2018-04-01

    By performing first-principles calculations, we explored the origin and controlling methods of magnetism in ideal and oxygen deficient (001) LaAlO3/SrTiO3 (LAO/STO) heterostructures. It was found that the ferromagnetic ordering is the ground state and that the interfacial Ti 3d electrons introduced by the LaO-termination, polar catastrophe and oxygen vacancies can all contribute to the magnetism. With respect to the ways of tuning the magnetic properties, our results show that LaO-terminated films generally carry much stronger magnetic moments than their AlO2-terminated counterparts and that the magnitude of magnetic moments can also be effectively controlled by the LAO film thickness. In addition, oxygen vacancy leads to substantial electronic reconstruction of the interfacial Ti 3d orbitals, which enhances the magnetization and makes the magnetism emerge in thinner polar LAO films. This work offers useful information to facilitate one's understanding of the magnetism and to provide clues to engineer the magnetic behaviors in related oxide heterostructures.

  6. Synthesis of Ag-loaded SrTiO_3/TiO_2 heterostructure nanotube arrays for enhanced photocatalytic performances

    International Nuclear Information System (INIS)

    Hu, Zijun; Chen, Da; Zhan, Xiaqiang; Wang, Fang; Qin, Laishun; Huang, Yuexiang

    2017-01-01

    In this work, the effect of loading Ag nanoparticles on the photocatalytic activity of SrTiO_3/TiO_2 nanotube arrays (TNTAs) was investigated. TNTAs were partially transformed to SrTiO_3 through a hydrothermal treatment, which could preserve the tubular structure of TNTAs, and then, Ag nanoparticles were well deposited on the surface of SrTiO_3/TNTAs heterostructure by a chemical reduction process. Compared to the TNTAs sample, the Ag-loaded SrTiO_3/TNTAs sample showed significantly enhanced photocatalytic activities for photodegradation of rhodamine B. The enhanced photocatalytic activity of Ag-loaded SrTiO_3/TNTAs could be attributed to the increased optical absorption as well as the efficient charge transfer and separation of photogenerated electron-hole pairs induced by the SrTiO_3/TNTAs heterojunction and the Schottky barrier between metallic Ag and SrTiO_3/TNTAs. On the basis of the trapping experiments, the possible photocatalytic mechanism was also discussed. (orig.)

  7. Quantum Chemical Study of Water Adsorption on the Surfaces of SrTiO3 Nanotubes.

    Science.gov (United States)

    Bandura, Andrei V; Kuruch, Dmitry D; Evarestov, Robert A

    2015-07-20

    We have studied the adsorption of water molecules on the inner and outer surfaces of nanotubes generated by rolling (001) layers of SrTiO3 cubic crystals. The stability and the atomic and electronic structures of the adsorbed layers are determined by using hybrid density functional theory. The absorption energy and the preferred adsorbate structure are essentially governed by the nature of the surface of the nanotube. Dissociative adsorption prevails on the outer nanotube surfaces. The stability of the adsorbed layers on the inner surfaces is related to the possibility of the formation of hydrogen bonds between water molecules and surface oxygen atoms, and depends on the surface curvature. The presence of water molecules on the inner surface of the nanotubes leads to an increase of the electronic band gap. Externally TiO2 -terminated nanotubes could be used for the photocatalytic decomposition of water by ultraviolet radiation. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Inhomogeneity at the LaAlO3/SrTiO3 interface

    Science.gov (United States)

    Claeson, T.; Kalabukhov, A.; Gunnarsson, R.; Winkler, D.; Borjesson, J.; Ljustina, N.; Olsson, E.; Popok, V.; Boikov, Yu.; Serenkov, I.; Sakharov, V.

    2010-03-01

    High electrical conductivity has been reported for the interface between two wide-band gap insulators, LaAlO3 (LAO) and SrTiO3 (STO). It occurs above a critical thickness of LAO and can be tuned by an electric field. The conduction has been attributed to i) ``polar catastrophe'' , where the electrostatic charge at the interface is compensated by the transfer of half an electron per unit cell to the interface, ii) oxygen vacancies in the STO, and iii) cation intermixing, which may result in the formation of metallic La1-xSrxTiO3 layer. The relation between microstructure and electrical properties is crucial for understanding the origin of electrical conductivity. We have investigated the interface composition using medium-energy ion spectroscopy, high resolution electron microscopy, and Kelvin probe force microscopy. We find a correlation between cationic intermixing at the interface and electrical properties and inhomogeneities of the interface conductivity that may support a percolation model. Work supported by Swedish VR & KAW, Russian ISTC 3743, EC NANOXIDE

  9. Thickness-dependent resistance switching in Cr-doped SrTiO3

    Science.gov (United States)

    Kim, TaeKwang; Du, Hyewon; Kim, Minchang; Seo, Sunae; Hwang, Inrok; Kim, Yeonsoo; Jeon, Jihoon; Lee, Sangik; Park, Baeho

    2012-09-01

    The thickness-dependent bipolar resistance-switching behavior was investigated for epitaxiallygrown Cr-doped SrTiO3 (Cr-STO). All the pristine devices of different thickness showed polarity-independent symmetric current-voltage characteristic and the same space-charge-limited conduction mechanism. However, after a forming process, the resultant conduction and switching phenomena were significantly different depending on the thickness of Cr-STO. The forming process itself was highly influenced by resistance value of each pristine device. Based on our results, we suggest that the resistance-switching mechanism in Cr-STO depends not only on the insulating material's composition or the contact metal as previously reported but also on the initial resistance level determined by the geometry and the quality of the insulating material. The bipolar resistance-switching behaviors in oxide materials of different thicknesses exhibit mixed bulk and interface switching. This indicates that efforts in resistance-based memory research should be focused on scalability or process method to control a given oxide material in addition to material type and device structure.

  10. Mechanical control of magnetism in oxygen deficient perovskite SrTiO3.

    Science.gov (United States)

    Zhang, Yajun; Wang, Jie; Sahoo, M P K; Shimada, Takahiro; Kitamura, Takayuki

    2015-10-28

    Mechanical control of magnetism in perovskite oxides is an important and promising approach in spintronics. Based on the first-principles calculations, we demonstrate that a negative pressure leads to a great enhancement of magnetic moment in deficient SrTiO3 with oxygen vacancies, whereas a positive pressure results in the gradual disappearance of magnetism. Spin charge density, Bader charge analysis and electronic density of states successfully elucidate the origin and underlying physics of the enhancement and disappearance of magnetism. It is found that the split electronic states of dz(2), dyz and dzx in the 3d orbitals of Ti atoms remarkably contribute to the occupancy of majority spin states under negative pressure, which induces a large magnetic moment. Under positive pressure, however, the equal occupancy of both majority and minority t2g and eg states leads to the disappearance of magnetization. In addition, both negative and positive pressures can largely lower the vacancy formation enthalpy, suggesting that the oxygen vacancy is preferable with pressure. Our findings may provide a mechanism to achieve the pressure control of magnetization in nonmagnetic perovskite oxides.

  11. Effect of multi-layered bottom electrodes on the orientation of strontium-doped lead zirconate titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhaskaran, M. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia)], E-mail: madhu.bhaskaran@gmail.com; Sriram, S. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia); Mitchell, D.R.G.; Short, K.T. [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation (ANSTO), PMB 1, Menai, New South Wales 2234 (Australia); Holland, A.S. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia)

    2008-09-30

    This article discusses the results from X-ray diffraction (XRD) analysis of piezoelectric strontium-doped lead zirconate titanate (PSZT) thin films deposited on multi-layer coatings on silicon. The films were deposited by RF magnetron sputtering on a metal coated substrate. The aim was to exploit the pronounced piezoelectric effect that is theoretically expected normal to the substrate. This work highlighted the influence that the bottom electrode architecture exerts on the final crystalline orientation of the deposited thin films. A number of bottom electrode architectures were used, with the uppermost metal layer on which PSZT was deposited being gold or platinum. The XRD analysis revealed that the unit cell of the PSZT thin films deposited on gold and on platinum were deformed, relative to expected unit cell dimensions. Experimental results have been used to estimate the unit cell parameters. The XRD results were then indexed based on these unit cell parameters. The choice and the thickness of the intermediate adhesion layers influenced the relative intensity, and in some cases, the presence of perovskite peaks. In some cases, undesirable reactions between the bottom electrode layers were observed, and layer architectures to overcome these reactions are also discussed.

  12. Preparation of titanium oxide and metal titanates as powders, thin films, and microspheres by complex sol-gel process

    International Nuclear Information System (INIS)

    Deptula, A.; Olczak, T.; Lada, W.; Chmielewski, A.G.; Jakubaszek, U.; Sartowska, B.; Goretta, K.C.; Alvani, C.; Casadio, S.; Contini, V.

    2006-01-01

    Titanium oxide, for many years an important pigment, has recently been applied widely as a photocatalyst or as supports for metallic catalysts, gas sensors, photovoltaic solar cells, and water and air purification devices. Titanium oxide (TiO 2 ) and titanates based on Ba, Sr and Ca were prepared from commercial solutions of TiCl 4 and HNO 3 . The main preparation steps for the sols consisted of elimination of Cl - by distillation with HNO 3 and addition of metal hydroxides for the titanates. Resulting sols were gelled and used to: (a) prepare irregularly shaped powders by evaporation; (b) produce by a dipping technique thin films on glass, Ag or Ti supports; (c) produce spherical powders (diameters <100 μm) by solvent extraction. Results of thermal and X-ray-diffraction analyses indicated that the temperatures required to form the various compounds were lower than those necessary to form the compounds by conventional solid-state reactions and comparable to those required with use of organometallic based sol-gel methods. Temperatures of formation could be further reduced by addition of ascorbic acid (ASC) to the sols

  13. Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain.

    Science.gov (United States)

    Suzuki, Norihiro; Osada, Minoru; Billah, Motasim; Bando, Yoshio; Yamauchi, Yusuke; Hossain, Shahriar A

    2018-03-27

    Barium titanate (BaTiO3, hereafter BT) is an established ferroelectric material first discovered in the 1940s and still widely used because of its well-balanced ferroelectricity, piezoelectricity, and dielectric constant. In addition, BT does not contain any toxic elements. Therefore, it is considered to be an eco-friendly material, which has attracted considerable interest as a replacement for lead zirconate titanate (PZT). However, bulk BT loses its ferroelectricity at approximately 130 °C, thus, it cannot be used at high temperatures. Because of the growing demand for high-temperature ferroelectric materials, it is important to enhance the thermal stability of ferroelectricity in BT. In previous studies, strain originating from the lattice mismatch at hetero-interfaces has been used. However, the sample preparation in this approach requires complicated and expensive physical processes, which are undesirable for practical applications. In this study, we propose a chemical synthesis of a porous material as an alternative means of introducing strain. We synthesized a porous BT thin film using a surfactant-assisted sol-gel method, in which self-assembled amphipathic surfactant micelles were used as an organic template. Through a series of studies, we clarified that the introduction of pores had a similar effect on distorting the BT crystal lattice, to that of a hetero-interface, leading to the enhancement and stabilization of ferroelectricity. Owing to its simplicity and cost effectiveness, this fabrication process has considerable advantages over conventional methods.

  14. Topotactic epitaxy of SrTiO3 mesocrystal superstructures with anisotropic construction for efficient overall water splitting

    International Nuclear Information System (INIS)

    Zhang, Peng; Fujitsuka, Mamoru; Majima, Tetsuro; Ochi, Tomoya; Kobori, Yasuhiro; Tachikawa, Takashi

    2017-01-01

    The higher-order structures of semiconductor-based photocatalysts play crucial roles in their physicochemical properties for efficient light-to-energy conversion. A novel perovskite SrTiO 3 mesocrystal superstructure with well-defined orientation of assembled cubic nanocrystals was synthesized by topotactic epitaxy from TiO 2 mesocrystals through a facile hydrothermal treatment. The SrTiO 3 mesocrystal exhibits three times the efficiency for the hydrogen evolution of conventional disordered systems in alkaline aqueous solution. It also exhibits a high quantum yield of 6.7 % at 360 nm in overall water splitting and even good durability up to 1 day. Temporal and spatial spectroscopic observations revealed that the synergy of the efficient electron flow along the internal nanocube network and efficient collection at the larger external cubes produces remarkably long-lived charges for enhanced photocatalysis. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Performance-Microstructure Relations in Ni/CGO Infiltrated Nb-doped SrTiO3 SOFC Anodes

    DEFF Research Database (Denmark)

    Ramos, Tania; Bernuy-Lopez, Carlos; Reddy Sudireddy, Bhaskar

    2012-01-01

    Nb-doped SrTiO3 solid oxide fuel cell (SOFC) anodes, infiltrated with CGO/Ni, were investigated by electrochemical impedance spectroscopy (EIS) and high resolution microscopy techniques, upon varying production and testing parameters. The electrochemical analysis involved a combination of distrib......Nb-doped SrTiO3 solid oxide fuel cell (SOFC) anodes, infiltrated with CGO/Ni, were investigated by electrochemical impedance spectroscopy (EIS) and high resolution microscopy techniques, upon varying production and testing parameters. The electrochemical analysis involved a combination...... of distribution of relaxation times (DRT) and complex non-linear least squares (CNLS) fitting routine. These electrodes were studied as singlephase or as composites with 8YSZ. Sr0.94Ti0.9Nb0.1O3-δ/ 10 vol.% 8YSZ composite infiltrated electrodes were the best overall performers, with enhanced performance stability...

  16. Structural features of epitaxial NiFe2O4 thin films grown on different substrates by direct liquid injection chemical vapor deposition

    Science.gov (United States)

    Datta, R.; Loukya, B.; Li, N.; Gupta, A.

    2012-04-01

    NiFe2O4 (NFO) thin films are grown on four different substrates, i.e., Lead Zinc Niobate-Lead Titanate (PZN-PT), Lead Magnesium Niobate-Lead Titanate (PMN-PT), MgAl2O4 (MAO) and SrTiO3 (STO), by a direct liquid injection chemical vapor deposition technique (DLI-CVD) under optimum growth conditions where relatively high growth rate (˜20 nm/min), smooth surface morphology and high saturation magnetization values in the range of 260-290 emu/ cm3 are obtained. The NFO films with correct stoichiometry (Ni:Fe=1:2) grow epitaxially on all four substrates, as confirmed by energy dispersive X-ray spectroscopy, transmission electron microscopy and x-ray diffraction. While the films on PMN-PT and PZN-PT substrates are partially strained, essentially complete strain relaxation occurs for films grown on MAO and STO. The formations of threading dislocations along with dark diffused contrast areas related to antiphase domains having a different cation ordering are observed on all four substrates. These crystal defects are correlated with lattice mismatch between the film and substrate and result in changes in magnetic properties of the films. Atomic resolution HAADF imaging and EDX line profiles show formation of a sharp interface between the film and the substrate with no inter-diffusion of Pb or other elements across the interface. Antiphase domains are observed to originate at the film-substrate interface.

  17. Thickness-dependent photovoltaic effects in miscut Nb-doped SrTiO3 single crystals

    International Nuclear Information System (INIS)

    Yue Zengji; Zhao Kun; Zhao Songqing; Lu Zhiqing; Li Xiaoming; Ni Hao; Wang Aijun

    2010-01-01

    The photovoltaic effects of Nb-doped SrTiO 3 single crystals with different thicknesses were investigated under the illumination of ultraviolet pulsed lasers. The peak photovoltage increased and then decreased quickly with the decrease in crystal thickness, and a maximum photovoltage occurred for the 180 μm-thick crystal. The photovoltaic response time decreased monotonically with decreasing crystal thickness. The present results suggested the promising potential of reducing crystal thickness in high sensitivity detectors with fast response.

  18. Core-shell SrTiO3/graphene structure by chemical vapor deposition for enhanced photocatalytic performance

    Science.gov (United States)

    He, Chenye; Bu, Xiuming; Yang, Siwei; He, Peng; Ding, Guqiao; Xie, Xiaoming

    2018-04-01

    Direct growth of high quality graphene on the surface of SrTiO3 (STO) was realized through chemical vapor deposition (CVD), to construct few-layer 'graphene shell' on every STO nanoparticle. The STO/graphene composite shows significantly enhanced UV light photocatalytic activity compared with the STO/rGO reference. Mechanism analysis confirms the role of special core-shell structure and chemical bond (Tisbnd C) for rapid interfacial electron transfer and effective electron-hole separation.

  19. Orientation Control of Interfacial Magnetism at La0.67Sr0.33MnO3/SrTiO3 Interfaces.

    Science.gov (United States)

    Guo, Er-Jia; Charlton, Timothy; Ambaye, Haile; Desautels, Ryan D; Lee, Ho Nyung; Fitzsimmons, Michael R

    2017-06-07

    Understanding the magnetism at the interface between a ferromagnet and an insulator is essential because the commonly posited magnetic "dead" layer close to an interface can be problematic in magnetic tunnel junctions. Previously, degradation of the magnetic interface was attributed to charge discontinuity across the interface. Here, the interfacial magnetism was investigated using three identically prepared La 0.67 Sr 0.33 MnO 3 (LSMO) thin films grown on different oriented SrTiO 3 (STO) substrates by polarized neutron reflectometry. In all cases the magnetization at the LSMO/STO interface is larger than the film bulk. We show that the interfacial magnetization is largest across the LSMO/STO interfaces with (001) and (111) orientations, which have the largest net charge discontinuities across the interfaces. In contrast, the magnetization of LSMO/STO across the (110) interface, the orientation with no net charge discontinuity, is the smallest of the three orientations. We show that a magnetically degraded interface is not intrinsic to LSMO/STO heterostructures. The approach to use different crystallographic orientations provides a means to investigate the influence of charge discontinuity on the interfacial magnetization.

  20. Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting.

    Science.gov (United States)

    Qin, Lifeng; Sun, Yingying; Wang, Qing-Ming; Zhong, Youliang; Ou, Ming; Jiang, Zhishui; Tian, Wei

    2012-12-01

    In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tape-casting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ε(T)(33)/ε(0) measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e(33) in the range of 15 to 26 C/m(2), piezoelectric strain constants (d(31)) in the range of -169 × 10(-12) C/N to -314 × 10(-12) C/N, electromechanical coupling coefficients (k(t)) in the range of 0.48 to 0.53, and k(31) in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.

  1. Mechanical and dielectric characterization of lead zirconate titanate(PZT)/polyurethane(PU) thin film composite for energy harvesting

    Science.gov (United States)

    Aboubakr, S.; Rguiti, M.; Hajjaji, A.; Eddiai, A.; Courtois, C.; d'Astorg, S.

    2014-04-01

    The Lead Zirconate titanate (PZT) ceramic is known by its piezoelectric feature, but also by its stiffness, the use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag ...). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT, inclusions of this one in a PU matrix raises the permittivity of the composite, on other hand this latter seems to decline at high frequencies.

  2. Native SrTiO3 (001) surface layer from resonant Ti L2,3 reflectance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Valvidares, Manuel; Huijben, Mark; Yu, Pu; Ramesh, Ramamoorthy; Kortright, Jeffrey

    2010-11-03

    We quantitatively model resonant Ti L2,3 reflectivity Rs,p(q, hn) from several SrTiO3 (001) single crystals having different initial surface preparations and stored in ambient conditions before and between measurements. All samples exhibit unexpected 300 K Rs(hn) - Rp(hn) anisotropy corresponding to weak linear dichroism and tetragonal distortion of the TiO6 octahedra indicating a surface layer with properties different from cubic SrTiO3. Oscillations in Rs(q) confirm a ubiquitous surface layer 2-3 nm thick that evolves over a range of time scales. Resonant optical constant spectra derived from Rs,p(hn) assuming a uniform sample are refined using a single surface layer to fit measured Rs(q). Differences in surface layer and bulk optical properties indicate that the surface is significantly depleted in Sr and enriched in Ti and O. While consistent with the tendency of SrTiO3 surfaces toward non-stoichiometry, this layer does not conform simply to existing models for the near surface region and apparently forms via room temperature surface reactions with the ambient. This new quantitative spectral modeling approach is generally applicable and has potential to study near-surface properties of a variety of systems with unique chemical and electronic sensitivities.

  3. Enhanced thermoelectric figure-of-merit in thermally robust, nanostructured superlattices based on SrTiO3

    KAUST Repository

    Abutaha, Anas I.

    2015-03-24

    Thermoelectric (TE) metal oxides overcome crucial disadvantages of traditional heavy-metal-alloy-based TE materials, such as toxicity, scarcity, and instability at high temperatures. Here, we report the TE properties of metal oxide superlattices, composed from alternating layers of 5% Pr3+-doped SrTiO3-δ (SPTO) and 20% Nb5+-doped SrTiO3-δ (STNO) fabricated using pulsed laser deposition (PLD). Excellent stability is established for these superlattices by maintaining the crystal structure and reproducing the TE properties after long-time (20 h) annealing at high temperature (∼1000 K). The introduction of oxygen vacancies as well as extrinsic dopants (Pr3+ and Nb5+), with different masses and ionic radii, at different lattice sites in SPTO and STNO layers, respectively, results in a substantial reduction of thermal conductivity via scattering a wider range of phonon spectrum without limiting the electrical transport and thermopower, leading to an enhancement in the figure-of-merit (ZT). The superlattice composed of 20 SPTO/STNO pairs, 8 unit cells of each layer, exhibits a ZT value of 0.46 at 1000 K, which is the highest among SrTiO3-based thermoelectrics. © 2015 American Chemical Society.

  4. Electronic structure and visible light photocatalysis water splitting property of chromium-doped SrTiO3

    International Nuclear Information System (INIS)

    Liu, J.W.; Chen, G.; Li, Z.H.; Zhang, Z.G.

    2006-01-01

    Cr-doped SrTi 1- x Cr x O 3 (x=0.00, 0.02, 0.05, 0.10) powders, prepared by solvothermal method, were further characterized by ultraviolet-visible (UV-vis) absorption spectroscopy. The UV-vis spectra indicate that the SrTi 1- x Cr x O 3 powders can absorb not only UV light like pure SrTiO 3 powder but also the visible-light spectrum (λ>420 nm). The results of density functional theory (DFT) calculation illuminate that the visible-light absorption bands in the SrTi 1- x Cr x O 3 catalyst are attributed to the band transition from the Cr 3d to the Cr 3d+Ti 3d hybrid orbital. The photocatalytic activities of chromium-doped SrTiO 3 both under UV and visible light are increased with the increase in the amounts of chromium. -- Graphical abstract: SrTi 1- x Cr x O 3 powders, prepared by solvothermal method, can absorb not only UV light like pure SrTiO 3 powder but also the visible-light spectrum (λ>420 nm). The results of DFT calculation illuminate that the visible-light absorption bands in the SrTi 1- x Cr x O 3 catalyst are attributed to the band transition from the Cr 3d to the Cr 3d+Ti 3d hybrid orbital

  5. SrTiO3 Nanocube-Doped Polyaniline Nanocomposites with Enhanced Photocatalytic Degradation of Methylene Blue under Visible Light

    Directory of Open Access Journals (Sweden)

    Syed Shahabuddin

    2016-02-01

    Full Text Available The present study highlights the facile synthesis of polyaniline (PANI-based nanocomposites doped with SrTiO3 nanocubes synthesized via the in situ oxidative polymerization technique using ammonium persulfate (APS as an oxidant in acidic medium for the photocatalytic degradation of methylene blue dye. Field emission scanning electron microscopy (FESEM, transmission electron microscopy (TEM, thermogravimetric analysis (TGA, X-ray diffraction (XRD, UV–Vis spectroscopy, Brunauer–Emmett–Teller analysis (BET and Fourier transform infrared spectroscopy (FTIR measurements were used to characterize the prepared nanocomposite photocatalysts. The photocatalytic efficiencies of the photocatalysts were examined by degrading methylene blue (MB under visible light irradiation. The results showed that the degradation efficiency of the composite photocatalysts that were doped with SrTiO3 nanocubes was higher than that of the undoped polyaniline. In this study, the effects of the weight ratio of polyaniline to SrTiO3 on the photocatalytic activities were investigated. The results revealed that the nanocomposite P-Sr500 was found to be an optimum photocatalyst, with a 97% degradation efficiency after 90 min of irradiation under solar light.

  6. Enhanced thermoelectric figure-of-merit in thermally robust, nanostructured superlattices based on SrTiO3

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Li, Kun; Dehkordi, Arash Mehdizadeh; Tritt, Terry M.; Alshareef, Husam N.

    2015-01-01

    Thermoelectric (TE) metal oxides overcome crucial disadvantages of traditional heavy-metal-alloy-based TE materials, such as toxicity, scarcity, and instability at high temperatures. Here, we report the TE properties of metal oxide superlattices, composed from alternating layers of 5% Pr3+-doped SrTiO3-δ (SPTO) and 20% Nb5+-doped SrTiO3-δ (STNO) fabricated using pulsed laser deposition (PLD). Excellent stability is established for these superlattices by maintaining the crystal structure and reproducing the TE properties after long-time (20 h) annealing at high temperature (∼1000 K). The introduction of oxygen vacancies as well as extrinsic dopants (Pr3+ and Nb5+), with different masses and ionic radii, at different lattice sites in SPTO and STNO layers, respectively, results in a substantial reduction of thermal conductivity via scattering a wider range of phonon spectrum without limiting the electrical transport and thermopower, leading to an enhancement in the figure-of-merit (ZT). The superlattice composed of 20 SPTO/STNO pairs, 8 unit cells of each layer, exhibits a ZT value of 0.46 at 1000 K, which is the highest among SrTiO3-based thermoelectrics. © 2015 American Chemical Society.

  7. Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures

    International Nuclear Information System (INIS)

    Hu, Chengqing; Park, Keun Woo; Yu, Edward T.; Posadas, Agham; Demkov, Alexander A.; Jordan-Sweet, Jean L.

    2013-01-01

    A LaCoO 3 /SrTiO 3 heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO 3 , leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO 3 layer on strain. Below the Curie temperature of the LaCoO 3 layer, this effect leads to modulation of resistance in LaCoO 3 as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO 3 . Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO 3 layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO 3 grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device

  8. Pulsed laser deposition of piezoelectric lead zirconate titanate thin films maintaining a post-CMOS compatible thermal budget

    Science.gov (United States)

    Schatz, A.; Pantel, D.; Hanemann, T.

    2017-09-01

    Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.

  9. Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

    Science.gov (United States)

    Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

    2017-07-01

    4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

  10. Controlling the conductivity of amorphous LaAlO3/SrTiO3 interfaces by in-situ application of an electric field during fabrication

    DEFF Research Database (Denmark)

    Trier, Felix; Amoruso, S.; Christensen, Dennis Valbjørn

    2013-01-01

    Amorphous-LaAlO3/SrTiO3 interfaces present metallic conductivity similar to those found in their all-crystalline counterparts. Here, the conductivity of amorphous-LaAlO3/SrTiO3 interfaces is modified by an external electric field applied in-situ with a biased truncated cone electrode (−10 V ≤ Vbias...

  11. Towards a solution of the puzzle posed by superconducting SrTiO3

    Science.gov (United States)

    Malik, G. P.

    2015-09-01

    Suitably doped SrTiO3 was found in 1964 to undergo a superconducting transition below 1 K with a dome-like Tc versus n (electron concentration) plot. The apex of the dome — a point of inflection — corresponds to the point (n≈9 ×1019cm-3, Tc≈0.30 K). On either side of it, Tc goes down to ≈0.1 K for the extreme values between which n was varied. A single value of Tc is thus observed for two different values of n. The puzzle for the theory has been to explain this result. Treating the problem in all its generality, we present here three equations: the μ1-incorporated BCS equation for Tc, the μ0-incorporated equation for the T = 0 gap Δ0, where μ1 and μ0 are the chemical potentials at T = Tc and T = 0 respectively, and an equation that relates the interaction parameters λ1 and λ0 at these temperatures. Because there are five unknowns in the problem, we tackle these equations via an approximation scheme that includes setting μ1 = μ0 and λ1 = λ0. The latter of these is factually a basic tenet of the BCS theory. Salient features of our findings are: (i) the solutions for Tc and Δ0 on the RHS (LHS) of the dome correspond to μ> kBθD(μ LHS the limits of the integrals in the equations need to be curtailed to obtain real solutions and (iii) the point μ = kBθD is a point of inflection in the Tc versus μ plot. Since the puzzle has remained unsolved for a long time, we also offer here a purely mathematical model for λ(μ) — sans physical justification — which leads to a Tc versus μ plot qualitatively in agreement with experiment.

  12. Evolution of the SrTiO3/MoO3 interface electronic structure: An in situ photoelectron spectroscopy study

    KAUST Repository

    Du, Yuanmin

    2015-05-12

    Modifying the surface energetics, particularly the work function, of advanced materials is of critical importance for a wide range of surface- and interface-based devices. In this work, using in situ photoelectron spectroscopy, we investigated the evolution of electronic structure at the SrTiO3 surface during the growth of ultrathin MoO3 layers. Thanks to the large work function difference between SrTiO3 and MoO3, the energy band alignment on the SrTiO3 surface is significantly modified. The charge transfer and dipole formation at the SrTiO3/MoO3 interface leads to a large modulation of work function and an apparent doping in SrTiO3. The measured evolution of electronic structure and upward band bending suggest that the growth of ultrathin MoO3 layers is a powerful tool to modulate the surface energetics of SrTiO3, and this surface-engineering approach could be generalized to other functional oxides.

  13. Evolution of the SrTiO3/MoO3 interface electronic structure: An in situ photoelectron spectroscopy study

    KAUST Repository

    Du, Yuanmin; Peng, Haiyang; Mao, Hongying; Jin, Kexin; Wang, Hong; Li, Feng; Gao, Xingyu; Chen, Wei; Wu, Tao

    2015-01-01

    Modifying the surface energetics, particularly the work function, of advanced materials is of critical importance for a wide range of surface- and interface-based devices. In this work, using in situ photoelectron spectroscopy, we investigated the evolution of electronic structure at the SrTiO3 surface during the growth of ultrathin MoO3 layers. Thanks to the large work function difference between SrTiO3 and MoO3, the energy band alignment on the SrTiO3 surface is significantly modified. The charge transfer and dipole formation at the SrTiO3/MoO3 interface leads to a large modulation of work function and an apparent doping in SrTiO3. The measured evolution of electronic structure and upward band bending suggest that the growth of ultrathin MoO3 layers is a powerful tool to modulate the surface energetics of SrTiO3, and this surface-engineering approach could be generalized to other functional oxides.

  14. Barium titanate coated with magnesium titanate via fused salt method and its dielectric property

    International Nuclear Information System (INIS)

    Chen Renzheng; Cui Aili; Wang Xiaohui; Li Longtu

    2003-01-01

    Barium titanate fine particles were coated homogeneously with magnesium titanate via the fused salt method. The thickness of the magnesium titanate film is 20 nm, as verified by TEM and XRD. The mechanism of the coating is that: when magnesium chloride is liquated in 800 deg. C, magnesium will replace barium in barium titanate, and form magnesium titanate film on the surface of barium titanate particles. Ceramics sintered from the coated particles show improved high frequency ability. The dielectric constant is about 130 at the frequency from 1 to 800 MHz

  15. Polarizaton recovery in lead zirconate titanate thin films deposited on nanosheets-beffered Si (oo1)

    NARCIS (Netherlands)

    Chopra, A.; Bayraktar, Muharrem; Nijland, Maarten; ten Elshof, Johan E.; Bijkerk, Frederik; Rijnders, Augustinus J.H.M.

    2016-01-01

    Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the

  16. Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)

    OpenAIRE

    Anuj Chopra; Muharrem Bayraktar; Maarten Nijland; Johan E. ten Elshof; Fred Bijkerk; Guus Rijnders

    2016-01-01

    Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas n...

  17. Spin-orbit interaction and Kondo scattering at the PrAlO3/SrTiO3 interface: effects of oxygen content

    Science.gov (United States)

    Mozaffari, Shirin; Guchhait, Samaresh; Markert, John T.

    2017-10-01

    We report the effects of oxygen pressure during growth (PO2 ) on the electronic and magnetic properties of PrAlO3 films grown on TiO2 -terminated SrTiO3 substrates. Resistivity measurements show an increase in the sheet resistance as PO2 is increased. The saturation of the sheet resistance down to 0.3 K is consistent with Kondo theory for PO2 ≥slant 10-5 torr. Resistivity data fits indicate Kondo temperatures of 16-18 K. For the 10-4 sample, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields due to the Kondo effect. Analysis of the MR data permitted the extraction of the SO interaction critical field for the PO2=10-5 torr interface ( H_SO=1.25 T). We observed high positive MR for the least oxygenated sample, where a fraction of the n-type carriers are derived from oxygen vacancies and possible cation interdiffusion; for this 6×10-6 torr sample, Hall effect data indicate a thick conducting layer. Its extremely high MR (˜400% ) is attributed to classical behavior due to a distribution of mobilities.

  18. Photoresponse in La0.9Hf0.1MnO3/0.05wt%Nb-doped SrTiO3 heteroepitaxial junctions

    Science.gov (United States)

    Qi, Yaping; Ni, Hao; Zheng, Ming; Zeng, Jiali; Jiang, Yucheng; Gao, Ju

    2018-05-01

    Excellent photo detectors need to have the rapid response and good repeatability from the requirement of industrial applications. In this paper, transport behavior and opto-response of heterostructures made with La0.9Hf0.1MnO3 and 0.05wt%Nb-doped SrTiO3 were investigated. The heterojunctions exhibited an excellent rectifying feature with very low leakage in a broad temperature region (from 40 to 300 K). These thin films presented persistent and stable photovoltages upon light illumination. Rapid shift between small and large voltages corresponding to "light OFF" and "light ON" states, respectively, was observed, demonstrating reliable photo detection behavior. A semiconductor laser with a wavelength of 650 nm was used as the light source. It is also noted that the observed photovoltages are strongly determined by light intensity. The injection of photoexcited charge carriers (electrons) could be responsible for the appearance of the observed opto-response. Such manipulative features by light irradiation exhibit great potential for light detectors for visible light.

  19. Photoresponse in La0.9Hf0.1MnO3/0.05wt%Nb-doped SrTiO3 heteroepitaxial junctions

    Directory of Open Access Journals (Sweden)

    Yaping Qi

    2018-05-01

    Full Text Available Excellent photo detectors need to have the rapid response and good repeatability from the requirement of industrial applications. In this paper, transport behavior and opto-response of heterostructures made with La0.9Hf0.1MnO3 and 0.05wt%Nb-doped SrTiO3 were investigated. The heterojunctions exhibited an excellent rectifying feature with very low leakage in a broad temperature region (from 40 to 300 K. These thin films presented persistent and stable photovoltages upon light illumination. Rapid shift between small and large voltages corresponding to “light OFF” and “light ON” states, respectively, was observed, demonstrating reliable photo detection behavior. A semiconductor laser with a wavelength of 650 nm was used as the light source. It is also noted that the observed photovoltages are strongly determined by light intensity. The injection of photoexcited charge carriers (electrons could be responsible for the appearance of the observed opto-response. Such manipulative features by light irradiation exhibit great potential for light detectors for visible light.

  20. Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

    Science.gov (United States)

    Md. Sadaf, Sharif; Mostafa Bourim, El; Liu, Xinjun; Hasan Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang

    2012-03-01

    We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

  1. Large tunneling anisotropic magnetoresistance in La0.7Sr0.3MnO3/pentacene/Cu structures prepared on SrTiO3 (110) substrates

    Science.gov (United States)

    Kamiya, Takeshi; Miyahara, Chihiro; Tada, Hirokazu

    2017-01-01

    We investigated tunneling anisotropic magnetoresistance (TAMR) at the interface between pentacene and La0.7Sr0.3MnO3 (LSMO) thin films prepared on SrTiO3 (STO) (110) substrates. The dependence of the TAMR ratio on the magnetic field strength was approximately ten times larger than that of the magnetic field angle at a high magnetic field. This large difference in the TAMR ratio is explained by the interface magnetic anisotropy of strain-induced LSMO thin films on a STO (110) substrate, which has an easy axis with an out-of-plane component. We also note that the TAMR owing to out-of-plane magnetization was positive at each angle of the in-plane magnetic field. This result implies that active control of the interface magnetic anisotropy between organic materials and ferromagnetic metals should realize nonvolatile and high-efficiency TAMR devices.

  2. Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains

    Science.gov (United States)

    2017-01-01

    Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelectric response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelectric coefficient (d31f) and ferroelectric remanent polarization (Pr), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelectric coefficient (d33f) value. The effect of film thickness on the ferroelectric and piezoelectric properties of the PZT films was also investigated. With increasing film thickness, the grain column diameter gradually increases, and also the average Pr and d33f values become larger. The largest piezoelectric coefficient of d33f = 408 pm V–1 was found for a 4-μm film thickness. From a series of films in the thickness range 0.5–5 μm, the z-position dependence of the piezoelectric coefficient could be deduced. A local maximum value of 600 pm V–1 was deduced in the 3.5–4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial separation between the grains with increasing film thickness. PMID:28247756

  3. XPS Analysis of Ni and Oxygen in Single-Sintered SrTiO3 Multifunction Ceramic

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    XPS analyses have been performed to investigate the chemical conditions of Ni and oxygen on grain surfaces in single-sintered SrTiO3 capacitor-varistor ceramic doped with Nb2O5 and NiO. It is ascertained that Ni is in form of Ni2+ ions, which substitute for Ti4+ ions on grain surfaces during the oxidizing annealing. Moreover, it is confirmed that three kinds of chemically adsorbed oxygen such as O2-, O- and O~ are formed on grain surfaces. It is proposed that these behaviors contribute greatly to the generation of multiple types of grain boundary acceptor states in the ceramic.

  4. Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

    Directory of Open Access Journals (Sweden)

    M. M. Zhu

    2011-12-01

    Full Text Available Pb(Zr1-xTixO3 (PZT thin films near phase morphotropic phase boundary were deposited on (Pb0.86La0.14TiO3-coated glass by radio frequency sputtering. A retrieved analysis shows that the lattice parameters of the as-grown PZT thin films were similar to that of monoclinic PZT structure. Moreover, the PZT thin films possessed refractive index as high as 2.504 in TE model and 2.431 in TM model. The as-grown PZT thin film had one strong absorption peak at 632.6 nm, which attributed to lead deficiency by quantitative XPS analysis. From the attractive properties achieved, electro-optic and photovoltaic characteristic of the films were carried out.

  5. Characteristics of the surface layer of barium strontium titanate thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Craciun, V.; Singh, R. K.

    2000-01-01

    Ba 0.5 Sr 0.5 TiO 3 (BST) thin films grown on Si by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique exhibited significantly higher dielectric constant and refractive index values and lower leakage current densities than films grown by conventional PLD under similar conditions. X-ray photoelectron spectroscopy (XPS) investigations have shown that the surface layer of the grown films contained, besides the usual BST perovskite phase, an additional phase with Ba atoms in a different chemical state. PLD grown films always exhibited larger amounts of this phase, which was homogeneously mixed with the BST phase up to several nm depth, while UVPLD grown films exhibited a much thinner (∼1 nm) and continuous layer. The relative fraction of this phase was not correlated with the amount of C atoms present on the surface. Fourier transform infrared spectroscopy did not find any BaCO 3 contamination layer, which was believed to be related to this new phase. X-ray diffraction measurement showed that although PLD grown films contained less oxygen atoms, the lattice parameter was closer to the bulk value than that of UVPLD grown films. After 4 keV Ar ion sputtering for 6 min, XPS analysis revealed a small suboxide Ba peak for the PLD grown films. This finding indicates that the average Ba-O bonds are weaker in these films, likely due to the presence of oxygen vacancies. It is suggested here that this new Ba phase corresponds to a relaxed BST surface layer. (c) 2000 American Institute of Physics

  6. Characteristics of the surface layer of barium strontium titanate thin films deposited by laser ablation

    Science.gov (United States)

    Craciun, V.; Singh, R. K.

    2000-04-01

    Ba0.5Sr0.5TiO3 (BST) thin films grown on Si by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique exhibited significantly higher dielectric constant and refractive index values and lower leakage current densities than films grown by conventional PLD under similar conditions. X-ray photoelectron spectroscopy (XPS) investigations have shown that the surface layer of the grown films contained, besides the usual BST perovskite phase, an additional phase with Ba atoms in a different chemical state. PLD grown films always exhibited larger amounts of this phase, which was homogeneously mixed with the BST phase up to several nm depth, while UVPLD grown films exhibited a much thinner (˜1 nm) and continuous layer. The relative fraction of this phase was not correlated with the amount of C atoms present on the surface. Fourier transform infrared spectroscopy did not find any BaCO3 contamination layer, which was believed to be related to this new phase. X-ray diffraction measurement showed that although PLD grown films contained less oxygen atoms, the lattice parameter was closer to the bulk value than that of UVPLD grown films. After 4 keV Ar ion sputtering for 6 min, XPS analysis revealed a small suboxide Ba peak for the PLD grown films. This finding indicates that the average Ba-O bonds are weaker in these films, likely due to the presence of oxygen vacancies. It is suggested here that this new Ba phase corresponds to a relaxed BST surface layer.

  7. Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors

    Science.gov (United States)

    Lee, J.; Esayan, S.; Safari, A.; Ramesh, R.

    1994-07-01

    Fatigue of Pb(Zr0.52Ti0.48)O3 (PZT) thin-film capacitors was studied under UV light (He-Cd laser, λ=325 nm). The remanent polarization of the PZT film capacitors increased upon light illumination. Fatigue resistance was also improved under UV light. During fatigue test, the change in polarization of PZT films upon UV light illumination increased gradually with cycling. These results were examined within the framework of the polarization screening model, which is suggested as an essential process for fatigue. This leads to a conclusion that more charged defects are involved in the fatigue process through internal screening of polarization.

  8. Real-time observations of interface formation for barium strontium titanate films on silicon

    International Nuclear Information System (INIS)

    Mueller, A.H.; Suvorova, N.A.; Irene, E.A.; Auciello, O.; Schultz, J.A.

    2002-01-01

    Ba .5 Sr .5 TiO 3 (BST) film growth by ion sputtering on bare and thermally oxidized silicon was observed in real time using in-situ spectroscopic ellipsometry and time of flight ion scattering and recoil spectrometry techniques. At the outset of BST film deposition on silicon, an approximately 30 Aa film with intermediate static dielectric constant (K∼12) and refractive index (n∼2.6 at photon energies of 1.5-3.25 eV) interface layer formed on bare silicon. The interface layer growth rate was greatly reduced on an oxidized silicon substrate. The results have profound implications on the static dielectric constant of BST

  9. Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2010-02-15

    The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

  10. Magnetic two-dimensional electron gas at the manganite-buffered LaAlO3/SrTiO3 interface

    DEFF Research Database (Denmark)

    R. Zhang, H.; Zhang, Y.; Zhang, H.

    2017-01-01

    Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions with the mediat......Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions...... with the mediation of itinerant electrons. Herein, we report a magnetic 2DEG at a La7/8Sr1/8MnO3-buffered LaAlO3/SrTiO3 interface, which simultaneously shows electrically tunable anomalous Hall effect and high conductivity. The spin-polarized temperature for the 2DEG is promoted to 30 K while the mobility remains...... high. The magnetism likely results from a gradient manganese interdiffusion into SrTiO3. The present work demonstrates the great potential of manganite-buffered LaAlO3/SrTiO3 interfaces for spintronic applications....

  11. Plasma plume effects on the conductivity of amorphous-LaAlO3/SrTiO3 interfaces grown by pulsed laser deposition in O2 and Ar

    DEFF Research Database (Denmark)

    Sambri, A.; Christensen, Dennis; Trier, Felix

    2012-01-01

    Amorphous-LaAlO3/SrTiO3 interfaces exhibit metallic conductivity similar to those found for the extensively studied crystalline-LaAlO3/SrTiO3 interfaces. Here, we investigate the conductivity of the amorphous-LaAlO3/SrTiO3 interfaces grown in different pressures of O2 and Ar background gases...

  12. Chemical composition and deformation-induced stresses in ferroelectric films of barium-strontium titanate

    International Nuclear Information System (INIS)

    Karmanenko, S.F.; Dedyk, A.I.; Isakov, N.N.; Sakharov, V.I.; Semenov, A.A.; Serenkov, I.T.; Ter-Martirosyan, L.T.

    1999-01-01

    Influence of the ratio of cationic components and inner deformation-induced stresses on critical temperature (T c ) and dielectric characteristics of ferroelectric films Ba x Sr 1-x TiO 3 grown on α-Al 2 O 3 [1012] and LaAlO 3 substrates was studied. Diagnosis by means of ion backscattering permitted ascertaining the deficiency of barium in the films near the surface layer, as well as differences in their structural quality [ru

  13. Effect of splat morphology on the microstructure and dielectric properties of plasma sprayed barium titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Pakseresht, A.H., E-mail: amirh_pak@yahoo.com [Center of Ceramic Coatings, Department of Ceramics, Materials and Energy Research Center, PO Box 31787-316, Karaj (Iran, Islamic Republic of); Rahimipour, M.R. [Center of Ceramic Coatings, Department of Ceramics, Materials and Energy Research Center, PO Box 31787-316, Karaj (Iran, Islamic Republic of); Vaezi, M.R. [Department of Nanotechnology and Advanced Materials, Materials and Energy Research Center, PO Box 31787-316, Karaj (Iran, Islamic Republic of); Salehi, M. [Department of Materials Engineering, Isfahan University of Technology, PO Box 84156-83111, Isfahan (Iran, Islamic Republic of)

    2015-01-01

    Highlights: • BaTiO{sub 3} splats were collected on the mirror polished substrate for the first time. • There was no amorphous phase in the coating collected on the preheated substrate. • The dielectric coefficient was increased by a factor of 3 for the coatings sprayed on the preheated substrates. - Abstract: In the thermal spray process, the film is built up by impingement of molten droplets onto substrate. Splats are created by flattening and spreading of the impacting droplets. Splat morphology can determine the microstructure, physical and mechanical properties of the coating. In this study, BaTiO{sub 3} films were deposited onto a mirror polished stainless steel substrates kept at three different temperatures (25, 300 and 600 °C). At the elevated temperatures, the substrate surface topography and the desorbtion of adsorbates and condensate at the substrate surface are two important factors which change the morphology of the individual splats, from splash morphology to disk-like shape. Splat morphology can determine deposit microstructure and improve the coating properties. The morphology of individual splats and the films were studied using scanning electron microscopy. Phase formation of the films was analyzed by X-ray diffraction. The surface topography of the substrates with different temperatures was analyzed using atomic force microscopy. Furthermore, X-ray photoelectron spectroscopy was performed to determine the chemical compositions of the surface substrate. Results indicated that the porosity in the film produced at room temperature was higher than that in the film deposited on the heated substrates. Also, the dielectric coefficient of the films was increased by decreasing the common defects from 120 to 505 for film deposited on as-received and heated substrates, respectively.

  14. In-plane microwave dielectric properties of paraelectric barium strontium titanate thin films with anisotropic epitaxy

    Science.gov (United States)

    Simon, W. K.; Akdogan, E. K.; Safari, A.; Bellotti, J. A.

    2005-08-01

    In-plane dielectric properties of ⟨110⟩ oriented epitaxial (Ba0.60Sr0.40)TiO3 thin films in the thickness range from 25-1200nm have been investigated under the influence of anisotropic epitaxial strains from ⟨100⟩ NdGaO3 substrates. The measured dielectric properties show strong residual strain and in-plane directional dependence. Below 150nm film thickness, there appears to be a phase transition due to the anisotropic nature of the misfit strain relaxation. In-plane relative permittivity is found to vary from as much as 500-150 along [11¯0] and [001] respectively, in 600nm thick films, and from 75 to 500 overall. Tunability was found to vary from as much as 54% to 20% in all films and directions, and in a given film the best tunability is observed along the compressed axis in a mixed strain state, 54% along [11¯0] in the 600nm film for example.

  15. Topotactic Epitaxy of SrTiO3 Mesocrystal Superstructures with Anisotropic Construction for Efficient Overall Water Splitting.

    Science.gov (United States)

    Zhang, Peng; Ochi, Tomoya; Fujitsuka, Mamoru; Kobori, Yasuhiro; Majima, Tetsuro; Tachikawa, Takashi

    2017-05-02

    The higher-order structures of semiconductor-based photocatalysts play crucial roles in their physicochemical properties for efficient light-to-energy conversion. A novel perovskite SrTiO 3 mesocrystal superstructure with well-defined orientation of assembled cubic nanocrystals was synthesized by topotactic epitaxy from TiO 2 mesocrystals through a facile hydrothermal treatment. The SrTiO 3 mesocrystal exhibits three times the efficiency for the hydrogen evolution of conventional disordered systems in alkaline aqueous solution. It also exhibits a high quantum yield of 6.7 % at 360 nm in overall water splitting and even good durability up to 1 day. Temporal and spatial spectroscopic observations revealed that the synergy of the efficient electron flow along the internal nanocube network and efficient collection at the larger external cubes produces remarkably long-lived charges for enhanced photocatalysis. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3

    Science.gov (United States)

    Wen, Fangdi; Cao, Yanwei; Liu, Xiaoran; Pal, B.; Middey, S.; Kareev, M.; Chakhalian, J.

    2018-03-01

    Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at complex oxide interfaces present an experimental challenge. For example, despite almost a decade long research effort, the microscopic origin of ferromagnetism in LaAlO3/SrTiO3 heterojunctions is still an open question. Here, by using a prototypical two-dimensional electron gas (2DEG) which emerges at the interface between band insulator SrTiO3 and antiferromagnetic Mott insulator LaTiO3, the experiment reveals the evidence for magnetic phase separation in a hole-doped Ti d1 t2g system, resulting in spin-polarized 2DEG. The details of electronic and magnetic properties of the 2DEG were investigated by temperature-dependent d.c. transport, angle-dependent X-ray photoemission spectroscopy, and temperature-dependent magnetoresistance. The observation of clear hysteresis in magnetotransport at low magnetic fields implies spin-polarization from magnetic islands in the hole rich LaTiO3 near the interface. These findings emphasize the role of magnetic instabilities in doped Mott insulators, thus providing another path for designing all-oxide structures relevant to spintronic applications.

  17. Ferroelectricity of Sn-doped SrTiO3 perovskites with tin at both A and B sites

    Science.gov (United States)

    Suzuki, Shoichiro; Honda, Atsushi; Iwaji, Naoki; Higai, Shin'ichi; Ando, Akira; Takagi, Hiroshi; Kasatani, Hirofumi; Deguchi, Kiyoshi

    2012-08-01

    We successfully obtained Sn-doped SrTiO3 (SSTO) perovskites, and clarified their ferroelectricity and structural properties by using first-principles theoretical calculations. The ferroelectricity of SSTO was confirmed by the appearance of a dielectric permittivity maximum and a clear hysteresis loop of the relationship between the external electric field and the electric flux density below 180 K. X-ray diffraction and Raman spectra revealed the structural phase transition of SSTO at approximately 200 K. We directly observed by spherical aberration corrected scanning transmission electron microscopy with energy-dispersive x-ray spectroscopy that Sn ions are doped into both Sr and Ti sites (SnA and SnB), and that SnA is located at an off-centered position. We also performed theoretical analyses of SSTO and related perovskites, and found that SnA is preferentially located in an off-centered position and that SnA and the O6 octahedron, which includes SnB in its center, oscillate along the antiphase direction in the soft mode. Thus, we propose that the ferroelectricity of SSTO originates from the antiphase off-centering, which induces ferroelectric nanoregions in paraelectric SrTiO3.

  18. Spin polarized electronic states and spin textures at the surface of oxygen-deficient SrTiO3

    Science.gov (United States)

    Jeschke, Harald O.; Altmeyer, Michaela; Rozenberg, Marcelo; Gabay, Marc; Valenti, Roser

    We investigate the electronic structure and spin texture at the (001) surface of SrTiO3 in the presence of oxygen vacancies by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic non-magnetic DFT calculations exhibit Rashba-like spin winding with a characteristic energy scale ~ 10 meV. However, when surface magnetism on the Ti ions is included, bands become spin-split with an energy difference ~ 100 meV at the Γ point. This energy scale is comparable to the observations in SARPES experiments performed on the two-dimensional electronic states confined near the (001) surface of SrTiO3. We find the spin polarized state to be the ground state of the system, and while magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures. We gratefully acknowledge financial support from the Deutsche Forschungsgemeinschaft through grants SFB/TR 49 and FOR 1346.

  19. Microscopic observation of ferroelectric domains in SrTiO3 using birefringence imaging techniques under high electric fields

    International Nuclear Information System (INIS)

    Manaka, Hirotaka; Nozaki, Hirofumi; Miura, Yoko

    2017-01-01

    Phase transitions in SrTiO 3 between quantum paraelectric, coherent paraelectric, and electric-field-induced ferroelectric states are governed by tetragonal domains with quantum fluctuations. However, their characteristics are still unclear. To observe the electric-field-induced ferroelectric state using birefringence imaging techniques, we developed a suitable sample holder to apply high electric fields of up to E ≃ 5 kV/cm and temperatures down to T = 20 K. From birefringence imaging measurements of the ferroelectric LiNbO 3 with varying electric field, distributions of the electric field in the sample stage were found to be negligible. In SrTiO 3 , a huge-retardance area corresponding to the ferroelectric domains appears at E > 2 kV/cm and T ≤ 60 K even though the paraelectric domains partially remain. Furthermore, the fast-axis direction rotates by 90° at the ferroelectric phase transition because of an electrostrictive effect in ferroelectrics. The phase diagram of the critical electric field and temperature agrees with previous reports obtained from dielectric and neutron scattering measurements. (author)

  20. Strong Energy-momentum Dispersion of Phonon Dressed Carriers in the Lightly Doped Band Insulator SrTiO3

    International Nuclear Information System (INIS)

    Meevasana, Warawat

    2010-01-01

    Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO 3 (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of La 2 CuO 4 by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped SrTiO 3 . Comparing to lightly doped Mott insulators, we find the signatures of only moderate electron-phonon coupling: a dispersion anomaly associated with the low frequency optical phonon with a λ(prime) ∼ 0.3 and an overall bandwidth renormalization suggesting an overall λ(prime) ∼ 0.7 coming from the higher frequency phonons. Further, we find no clear signatures of the large pseudogap or small polaron phenomena. These findings demonstrate that a large dielectric constant itself is not a good indicator of el-ph coupling and highlight the unusually strong effects of the el-ph coupling in doped Mott insulators.

  1. Major enhancement of the thermoelectric performance in Pr/Nb-doped SrTiO3 under strain

    KAUST Repository

    Amin, B.

    2013-07-16

    The electronic structure and thermoelectric properties of strained (biaxially and uniaxially) Sr0.95Pr0.05TiO3 and SrTi0.95Nb0.05O3 are investigated in the temperature range from 300 K to 1200 K. Substitutions of Pr at the Sr site and Nb at the Ti site generate n-type doping and thus improve the thermoelectric performance as compared to pristine SrTiO3. Further enhancement is achieved by the application of strain, for example, of the Seebeck coefficient by 21% for Sr0.95Pr0.05TiO3 and 10% for SrTi0.95Nb0.05O3 at room temperature in the case of 5% biaxial strain. At 1200 K, we predict figures of merit of 0.58 and 0.55 for 2.5% biaxially strained Sr0.95Pr0.05TiO3 and SrTi0.95Nb0.05O3 , respectively, which are the highest values reported for rare earth doped SrTiO3.

  2. Quasiparticle dynamics and spin-orbital texture of the SrTiO3 two-dimensional electron gas.

    Science.gov (United States)

    King, P D C; McKeown Walker, S; Tamai, A; de la Torre, A; Eknapakul, T; Buaphet, P; Mo, S-K; Meevasana, W; Bahramy, M S; Baumberger, F

    2014-02-27

    Two-dimensional electron gases (2DEGs) in SrTiO3 have become model systems for engineering emergent behaviour in complex transition metal oxides. Understanding the collective interactions that enable this, however, has thus far proved elusive. Here we demonstrate that angle-resolved photoemission can directly image the quasiparticle dynamics of the d-electron subband ladder of this complex-oxide 2DEG. Combined with realistic tight-binding supercell calculations, we uncover how quantum confinement and inversion symmetry breaking collectively tune the delicate interplay of charge, spin, orbital and lattice degrees of freedom in this system. We reveal how they lead to pronounced orbital ordering, mediate an orbitally enhanced Rashba splitting with complex subband-dependent spin-orbital textures and markedly change the character of electron-phonon coupling, co-operatively shaping the low-energy electronic structure of the 2DEG. Our results allow for a unified understanding of spectroscopic and transport measurements across different classes of SrTiO3-based 2DEGs, and yield new microscopic insights on their functional properties.

  3. Evolution of subband structure with gate-tuning at LaAlO3/SrTiO3 interfaces

    Science.gov (United States)

    Tang, Lucas; Smink, Sander; van Heeringen, Linde; Geessinck, Jaap; Rana, Abimanuya; Rastogi, Ankur; Maan, Jan Kees; Brinkman, Alexander; Zeitler, Uli; Hilgenkamp, Hans; McCollam, Alix

    The outstanding characteristic of LaAlO3/SrTiO3 heterostructures is the formation of a high mobility 2D electron gas (2DEG) at the interface. The additional presence of superconductivity, magnetism and large spin-orbit coupling in these systems suggests that strong correlations play an important role in the electronic properties, in contrast to conventional semiconductor-based 2DEGs. Knowledge of the electronic bandstructure, and the interdependence of conduction electron density and properties is therefore essential for our understanding of these materials. We present new results of low temperature transport measurements in a high mobility LaAlO3/SrTiO3-based heterostructure, in magnetic fields up to 33 T. Shubnikov de-Haas oscillations are observed, revealing several subbands with different carrier densities. By application of an electric field in the back gate geometry, the Fermi level is tuned and thus we are able to map the smooth evolution of the subbands and their properties with carrier density. These results are in good agreement with recent theoretical work, such that we can disentangle the complex band structure, and quantify aspects such as Rashba spin-splitting and the mixing of orbital character.

  4. Electronic structure and lattice dynamics at the interface of single layer FeSe and SrTiO3

    Science.gov (United States)

    Ahmed, Towfiq; Balatsky, Alexander; Zhu, Jian-Xin

    Recent discovery of high-temperature superconductivity with the superconducting energy gap opening at temperatures close to or above the liquid nitrogen boiling point in the single-layer FeSe grown on SrTiO3 has attracted significant interest. It suggests that the interface effects can be utilized to enhance the superconductivity. It has been shown recently that the coupling between the electrons in FeSe and vibrational modes at the interface play an important role. Here we report on a detailed study of electronic structure and lattice dynamics in the single-layer FeSe/SrTiO3 interface by using the state-of-art electronic structure method within the density functional theory. The nature of the vibrational modes at the interface and their coupling to the electronic degrees of freedom are analyzed. In addition, the effect of hole and electron doping in SrTiO3 on the electron-mode coupling strength is also considered. This work was carried out under the auspices of the National Nuclear Security Administration of the U.S. DOE at LANL under Contract No. DE-AC52-06NA25396, and was supported by the DOE Office of Basic Energy Sciences.

  5. Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

    Directory of Open Access Journals (Sweden)

    S. Gariglio

    2016-06-01

    Full Text Available In this review, we focus on the celebrated interface between two band insulators, LaAlO3 and SrTiO3, that was found to be conducting, superconducting, and to display a strong spin-orbit coupling. We discuss the formation of the 2-dimensional electron liquid at this interface, the particular electronic structure linked to the carrier confinement, the transport properties, and the signatures of magnetism. We then highlight distinctive characteristics of the superconducting regime, such as the electric field effect control of the carrier density, the unique tunability observed in this system, and the role of the electronic subband structure. Finally we compare the behavior of Tc versus 2D doping with the dome-like behavior of the 3D bulk superconductivity observed in doped SrTiO3. This comparison reveals surprising differences when the Tc behavior is analyzed in terms of the 3D carrier density for the interface and the bulk.

  6. Anomalous Transport in Sketched Nanostructures at the LaAlO_{3}/SrTiO_{3} Interface

    Directory of Open Access Journals (Sweden)

    Guanglei Cheng

    2013-03-01

    Full Text Available The oxide heterostructure LaAlO_{3}/SrTiO_{3} supports a two-dimensional electron liquid with a variety of competing phases, including magnetism, superconductivity, and weak antilocalization because of Rashba spin-orbit coupling. Further confinement of this two-dimensional electron liquid to the quasi-one-dimensional regime can provide insight into the underlying physics of this system and reveal new behavior. Here, we describe magnetotransport experiments on narrow LaAlO_{3}/SrTiO_{3} structures created by a conductive atomic force microscope lithography technique. Four-terminal local-transport measurements on Hall bar structures about 10 nm wide yield longitudinal resistances that are comparable to the resistance quantum h/e^{2} and independent of the channel length. Large nonlocal resistances (as large as 10^{4}  Ω are observed in some but not all structures with separations between current and voltage that are large compared to the two-dimensional mean-free path. The nonlocal transport is strongly suppressed by the onset of superconductivity below about 200 mK. The origin of these anomalous transport signatures is not understood, but may arise from coherent transport defined by strong spin-orbit coupling and/or magnetic interactions.

  7. Explanation for the temperature dependence of plasma frequencies in SrTiO3 using mixed-polaron theory

    International Nuclear Information System (INIS)

    Eagles, D.M.; Georgiev, M.; Petrova, P.C.

    1996-01-01

    A theory of mixed polarons is used to interpret the published experimental results of Gervais et al. on temperature-dependent plasma frequencies in Nb-doped SrTiO 3 . For given polaron masses before mixing, the appropriate average mixed-polaron mass at any temperature T depends on two quantities, δ and b, which are measures of the separation between the bottoms of large and nearly small polaron bands before mixing and of a mixing matrix element; δ and b are assumed to have arbitrary linear dependences on T, probably related to a T dependence of the bare mass, and a term quadratic in T is included in δ, determined from the T dependence of large-polaron binding energies. Including a constraint on the ratio δ/|b| at low T from known masses from specific-heat data, satisfactory agreement is obtained with masses determined from plasma frequencies. This gives further support for the theory of mixed polarons in SrTiO 3 in addition to that already published. copyright 1996 The American Physical Society

  8. Investigation of resistive switching in barium strontium titanate thin films for memory applications

    International Nuclear Information System (INIS)

    Shen, Wan

    2010-01-01

    Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO 3 (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10 4 times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO x layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the observation of

  9. Investigation of resistive switching in barium strontium titanate thin films for memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Wan

    2010-11-17

    Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO{sub 3} (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10{sup 4} times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO{sub x} layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the

  10. Raman analysis of ferroelectric switching in niobium-doped lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Ferrari, P.; Ramos-Moore, E.; Guitar, M.A.; Cabrera, A.L.

    2014-01-01

    Characteristic Raman vibration modes of niobium-doped lead zirconate titanate (PNZT) are studied as a function of ferroelectric domain switching. The microstructure of PNZT is characterized by scanning electron microscopy and X-ray diffraction. Ferroelectric switching is achieved by applying voltages between the top (Au) and bottom (Pt) electrodes, while acquiring the Raman spectra in situ. Vibrational active modes associated with paraelectric and ferroelectric phases are identified after measuring above and below the ferroelectric Curie temperature, respectively. Changes in the relative intensities of the Raman peaks are observed as a function of the switching voltage. The peak area associated with the ferroelectric modes is analyzed as a function of the applied voltage within one ferroelectric polarization loop, showing local maxima around the coercive voltage. This behavior can be understood in terms of the correlation between vibrational and structural properties, since ferroelectric switching modifies the interaction between the body-centered atom (Zr, Ti or Nb) and the Pb–O lattice. - Highlights: • Electric fields induce structural distortions on ferroelectric perovskites. • Ferroelectric capacitor was fabricated to perform hysteresis loops. • Raman analysis was performed in situ during ferroelectric switching. • Raman modes show hysteresis and inflections around the coercive voltages. • Data can be understood in terms of vibrational–structural correlations

  11. Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001

    Directory of Open Access Journals (Sweden)

    Anuj Chopra

    2016-12-01

    Full Text Available Fatigue behavior of Pb(Zr,TiO3 (PZT films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber–Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ∼97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. The understanding of the fatigue behavior and polarization recovery that is explained in this paper can be highly useful in developing more reliable PZT devices.

  12. Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)

    Science.gov (United States)

    Chopra, Anuj; Bayraktar, Muharrem; Nijland, Maarten; ten Elshof, Johan E.; Bijkerk, Fred; Rijnders, Guus

    2016-12-01

    Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber-Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ˜97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. The understanding of the fatigue behavior and polarization recovery that is explained in this paper can be highly useful in developing more reliable PZT devices.

  13. Characterization of irradiation damage distribution near TiO2/SrTiO3 interfaces using coherent acoustic phonon interferometry

    International Nuclear Information System (INIS)

    Yarotski, Dmitry; Yan Li; Jia Quanxi; Taylor, Antoinette J.; Fu Engang; Wang Yongqiang; Uberuaga, Blas P.

    2012-01-01

    We apply ultrafast coherent acoustic phonon interferometry to characterize the distribution of the radiation damage near the TiO 2 /SrTiO 3 interfaces. We show that the optical and mechanical properties of anatase TiO 2 remain unaffected by the radiation dosages in the 0.1÷5 dpa (displacements per atom) range, while the degraded optical response indicates a significant defect accumulation in the interfacial region of SrTiO 3 at 0.1 dpa and subsequent amorphization at 3 dpa. Comparison between the theoretical simulations and the experimental results reveals an almost threefold reduction of the sound velocity in the irradiated SrTiO 3 layer with peak damage levels of 3 and 5 dpa.

  14. Charge transfer mechanism for the formation of metallic states at the KTaO3/SrTiO3 interface

    KAUST Repository

    Nazir, Safdar

    2011-03-29

    The electronic and optical properties of the KTaO3/SrTiO3 heterointerface are analyzed by the full-potential linearized augmented plane-wave approach of density functional theory. Optimization of the atomic positions points at subordinate changes in the crystal structure and chemical bonding near the interface, which is due to a minimal lattice mismatch. The creation of metallic interface states thus is not affected by structural relaxation but can be explained by charge transfer between transition metal and oxygen atoms. It is to be expected that a charge transfer is likewise important for related interfaces such as LaAlO3/SrTiO3. The KTaO3/SrTiO3 system is ideal for disentangling the complex behavior of metallic interface states, since almost no structural relaxation takes place.

  15. Prediction of two-dimensional electron gas mediated magnetoelectric coupling at ferroelectric PbTiO3/SrTiO3 heterostructures

    Science.gov (United States)

    Wei, Lan-ying; Lian, Chao; Meng, Sheng

    2017-05-01

    First-principles calculations predict the emergence of magnetoelectric coupling mediated by two-dimensional electron gas (2DEG) at the ferroelectric PbTiO3/SrTiO3 heterostructure. Free electrons endowed by naturally existing oxygen vacancies in SrTiO3 are driven to the heterostructure interface under the polarizing field of ferroelectric PbTiO3 to form a 2DEG. The electrons are captured by interfacial Ti atoms, which surprisingly exhibits ferromagnetism even at room temperature with a small critical density of ˜15.5 μ C /cm2 . The ferroelectricity-controlled ferromagnetism mediated by interfacial 2DEG shows strong magnetoelectric coupling strength, enabling convenient control of magnetism by electric field and vice versa. The PbTiO3/SrTiO3 heterostructure is cheap, easily grown, and controllable, promising future applications in low-cost spintronics and information storage at ambient condition.

  16. Real-time observations of interface formation for barium strontium titanate films on silicon

    Science.gov (United States)

    Mueller, A. H.; Suvorova, N. A.; Irene, E. A.; Auciello, O.; Schultz, J. A.

    2002-05-01

    Ba.5Sr.5TiO3 (BST) film growth by ion sputtering on bare and thermally oxidized silicon was observed in real time using in-situ spectroscopic ellipsometry and time of flight ion scattering and recoil spectrometry techniques. At the outset of BST film deposition on silicon, an approximately 30 Å film with intermediate static dielectric constant (K˜12) and refractive index (n˜2.6 at photon energies of 1.5-3.25 eV) interface layer formed on bare silicon. The interface layer growth rate was greatly reduced on an oxidized silicon substrate. The results have profound implications on the static dielectric constant of BST.

  17. Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zapata-Navarro, A.; Marquez-Herrera, A. [CICATA-IPN, Km. 14.5 Carretera Tampico-Puerto Ind. Altamira, Altamira Tamaulipas 89600 (Mexico); Cruz-Jauregui, M.P. [CCMC-UNAM, Km. 107 Carretera Tijuana-Ensenada, Ensenada B.C. 22800 (Mexico); Calzada, M.L. [ICMM (CSIC) Madrid, Cantoblanco Madrid 28049 (Spain)

    2005-08-01

    In this work, we present the variation of the ferroelectric properties of Ba{sub 1-x}Sr{sub x}TiO{sub 3} films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates by RF co-sputtering with 0{<=}x{<=}1. The co-sputtering was done using a single magnetron with BaTiO{sub 3}/SrTiO{sub 3} targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

    International Nuclear Information System (INIS)

    Besland, M.P.; Djani-ait Aissa, H.; Barroy, P.R.J.; Lafane, S.; Tessier, P.Y.; Angleraud, B.; Richard-Plouet, M.; Brohan, L.; Djouadi, M.A.

    2006-01-01

    Bi 4-x La x Ti 3 O 12 (BLT x ) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO 2 /SiO 2 /Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La) 2 Ti 3 O 12 to (Bi,La) 4.5 Ti 3 O 12 , depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La) 4 Ti 3 O 12 chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones

  19. Preparation of Lead Magnesium Niobate-Lead Zirconate Titanate Films and Their Crystallization Behaviors

    International Nuclear Information System (INIS)

    Tursiloadi, Silvester

    2002-01-01

    The thin films with composition near morpotropic phase boundary (MPB) of the system xPb(Mg 1 /3, Nb 2 /3) O 3 -yPbTiO 3 -zPbZrO 3 (x = 0-0.35, y = 0.47 and z = 0.53), were prepared by sol-gel method. The starting materials were consisted of Pb(iso-OC 3 H 7 ) 2 , Zr(n-OC 4 H 9 ) 4 , Ti(iso-OC 3 H 7 ) 4 , Mg(CH 3 COO) 2 4H 2 O and Nb(OC 2 H 5 ) 5 . The l-propanol was used as solvent. The concentration of PMN-PT-PZ in coating solution was 0.7 M, and the pH of the solution was 4.5. The thin films were prepared by dip coating and spin coating. The crystallization behaviors of the PMN-PT-PZ thin films showed that the formation of perovskite phase at low temperature becomes difficult with increasing the content of PMN. The amounts of pyrochlore and perovskite phase in PMN-PT-PZ films depended on the heating temperatures, and PMN contents. Single-phase perovskite was found for the coated films containing 0 and 12.5 mol% after calculating at 600 o C, 21 mol% after calculating at 700 o C, and 30 mol% after calculating at 750 o C. Single-phase perovskite of coated films will never be found when the content of PMN was 35 mol%

  20. Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes

    OpenAIRE

    Bursill, Les A.; Reaney, Ian M.; Vijay, Dilip P.; Desu, Seshu B.

    1994-01-01

    High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO2/SiO2/Si and PZT/Pt/Ti/SiO2/Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO2 electrodes. The RuO2/PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO2 and PZT, as eviden...

  1. Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes

    International Nuclear Information System (INIS)

    Bursill, L.A.; Reaney, I.M.

    1994-01-01

    High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO 2 /SiO 2 /Si and PZT/Pt/Ti/SiO 2 /Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO 2 electrodes. The RuO 2 /PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO 2 and PZT, as evidenced by the atomic resolution images as well as energy dispersive X-ray analysis. A nanocrystalline pyrochlore phase Pb 2 ZrTiO 7-x (x ≠ 1) was found on the top surface of the PZT layer. The PZT/Pt/Ti/SiO 2 /Si thin film was well-crystallized and showed sharp interfaces throughout. Possible reasons for the improved fatigue characteristics of PZT/RuO 2 /SiO 2 /Si thin films are discussed. 13 refs; 7 figs

  2. Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Bursill, L A; Reaney, I M

    1994-12-31

    High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO{sub 2}/SiO{sub 2}/Si and PZT/Pt/Ti/SiO{sub 2}/Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO{sub 2} electrodes. The RuO{sub 2}/PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO{sub 2} and PZT, as evidenced by the atomic resolution images as well as energy dispersive X-ray analysis. A nanocrystalline pyrochlore phase Pb{sub 2}ZrTiO{sub 7-x} (x {ne} 1) was found on the top surface of the PZT layer. The PZT/Pt/Ti/SiO{sub 2}/Si thin film was well-crystallized and showed sharp interfaces throughout. Possible reasons for the improved fatigue characteristics of PZT/RuO{sub 2}/SiO{sub 2}/Si thin films are discussed. 13 refs; 7 figs.

  3. Thin film barium strontium titanate capacitors for tunable RF front-end applications

    NARCIS (Netherlands)

    Tiggelman, M.P.J.

    2009-01-01

    In this thesis, the results of intensive electrical characterization, modeling and the design of hardware with thin film tunable capacitors, i.e., dielectric varactors, has been presented and discussed. Especially the quality factor Q and the tuning ratio of the tunable capacitors have been studied,

  4. Nonlinear acoustic effects in the propagation of surface acoustic waves in SrTiO3 near the structural phase transition

    International Nuclear Information System (INIS)

    Balashova, E.V.; Lemanov, V.V.; Sherman, A.B.

    1986-01-01

    Generation process of a surface acoustic wave with summarized frequency in collinear propagation of two surface acoustic waves in SrTiO 3 crystal near crystal-phase transition O n → D 4h (T c ≅ 105 K) is investigated. Anomalous increase of a nonlinear parameter Γ ∼ (T-T c ) -1 attributed to a fluctuation mechanism is observed. It is shown that the presence of a surface layer in SrTiO 3 having a higher, than in crystal volume, temperature of phase transition results in summarized frequency signal oscillation

  5. Strain-mediated magnetic and transport properties of epitaxial LuxFe3-xO4 films

    Science.gov (United States)

    Wang, P.; Jin, C.; Zheng, D. X.; Bai, H. L.

    2015-10-01

    Strain mediated structure, magnetic, and transport properties of spinel ferrites were investigated by growing epitaxial LuxFe3-xO4 (LFO, 0 ≤ x ≤ 0.26 ) films on SrTiO3 and MgO substrates with in-plane compressive and tensile strains, respectively. The lattice parameter of LFO films decreases on SrTiO3 substrates, while increases on MgO substrates with the increasing Lu content. The LFO films on SrTiO3 substrates exhibit larger saturation magnetization and smaller exchange bias and coercive field. Phase shift of anisotropic magnetoresistance is also observed in the LFO films on SrTiO3 substrates. In addition, the nonmagnetic Lu3+ ions in spinel ferrites enhance the spin canting, which further increases the exchange bias and coercive field and strengthens the four-fold symmetry of anisotropic magnetoresistance and the two-fold symmetry of planar Hall effect.

  6. Influence of Tm-doping on microstructure and luminescence behavior of barium strontium titanate thick films

    International Nuclear Information System (INIS)

    Wang Jingyang; Zhang Tianjin; Pan Ruikun; Ma Zhijun; Wang Jinzhao

    2012-01-01

    Tm-doped Ba 0.8 Sr 0.2 TiO 3 thick films were prepared by the screen-printing technique on the alumina substrate. The microstructure of the Tm-doped BST thick films was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy, respectively. All the samples showed a typical perovskite polycrystalline structure when sintered at 1260 °C. The substitution behavior of Tm 3+ ion in BST was found to change with increasing the Tm 3+ concentration. The observed Tm-related red emission reaches the maximum at 0.2 mol% Tm 3+ concentration. The effects of concentration quenching on the luminescence intensity were discussed.

  7. Thickness dependence of the poling and current-voltage characteristics of paint films made up of lead zirconate titanate ceramic powder and epoxy resin

    Science.gov (United States)

    Egusa, Shigenori; Iwasawa, Naozumi

    1995-11-01

    A specially prepared paint made up of lead zirconate titanate (PZT) ceramic powder and epoxy resin was coated on an aluminum plate and was cured at room temperature, thus forming the paint film of 25-300 μm thickness with a PZT volume fraction of 53%. The paint film was then poled at room temperature, and the poling behavior was determined by measuring the piezoelectric activity as a function of poling field. The poling behavior shows that the piezoelectric activity obtained at a given poling field increases with an increase in the film thickness from 25 to 300 μm. The current-voltage characteristic of the paint film, on the other hand, shows that the increase in the film thickness leads not only to an increase in the magnitude of the current density at a given electric field but also to an increase in the critical electric field at which the transition from the ohmic to space-charge-limited conduction takes place. This fact indicates that the amount of the space charge of electrons injected into the paint film decreases as the film thickness increases. Furthermore, comparison of the current-voltage characteristic of the paint film with that of a pure epoxy film reveals that the space charge is accumulated largely at the interface between the PZT and epoxy phases in the paint film. On the basis of this finding, a model is developed for the poling behavior of the paint film by taking into account a possible effect of the space-charge accumulation and a broad distribution of the electric field in the PZT phase. This model is shown to give an excellent fit to the experimental data of the piezoelectric activity obtained here as a function of poling field and film thickness.

  8. Photoinduced modulation and relaxation characteristics in LaAlO3/SrTiO3 heterointerface

    KAUST Repository

    Jin, K. X.

    2015-03-05

    We report the modulation and relaxation characteristics in the two-dimensional electron gas system at LaAlO3/SrTiO3 heterointerface induced by the ultraviolet light illumination (365 nm). The suppression of Kondo effect at the interface illuminated by the light originates from the light irradiation-induced decoherence effect of localized states. It is interesting to note that the persistent and transient photoinduced effects are simultaneously observed and the photoinduced maximum change values in resistance are 80.8% and 51.4% at T = 20 K, respectively. Moreover, the photoinduced relaxation processes after the irradiation are systematically analyzed using the double exponential model. These results provide the deeper understanding of the photoinduced effect and the experimental evidence of tunable Kondo effect in oxides-based two-dimensional electron gas systems.

  9. High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

    KAUST Repository

    Nazir, Safdar

    2012-05-18

    A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.

  10. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  11. Tunable photovoltaic effect and solar cell performance of self-doped perovskite SrTiO3

    Directory of Open Access Journals (Sweden)

    K. X. Jin

    2012-12-01

    Full Text Available We report on the tunable photovoltaic effect of self-doped single-crystal SrTiO3 (STO, a prototypical perovskite-structured complex oxide, and evaluate its performance in Schottky junction solar cells. The photovaltaic characteristics of vacuum-reduced STO single crystals are dictated by a thin surface layer with electrons donated by oxygen vacancies. Under UV illumination, a photovoltage of 1.1 V is observed in the as-received STO single crystal, while the sample reduced at 750 °C presents the highest incident photon to carrier conversion efficiency. Furthermore, in the STO/Pt Schottky junction, a power conversion efficiency of 0.88% was achieved under standard AM 1.5 illumination at room temperature. This work establishes STO as a high-mobility photovoltaic semiconductor with potential of integration in self-powered oxide electronics.

  12. The metallic interface between the two band insulators LaGaO3 and SrTiO3

    KAUST Repository

    Nazir, Safdar

    2011-06-28

    The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

  13. Tunnel and electrostatic coupling in graphene-LaAlO3/SrTiO3 hybrid systems

    Directory of Open Access Journals (Sweden)

    I. Aliaj

    2016-06-01

    Full Text Available We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep 2-dimensional electron system. At low graphene-oxide inter-layer bias, the two electron systems are electrically isolated, despite their small spatial separation. A very efficient reciprocal gating of the two neighboring 2-dimensional systems is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic field-effects and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly coupled bilayer systems is discussed.

  14. The metallic interface between the two band insulators LaGaO3 and SrTiO3

    KAUST Repository

    Nazir, Safdar; Schwingenschlö gl, Udo; Singh, Nirpendra

    2011-01-01

    The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

  15. Photoinduced modulation and relaxation characteristics in LaAlO3/SrTiO3 heterointerface

    KAUST Repository

    Jin, K. X.; Lin, W.; Luo, B. C.; Wu, Tao

    2015-01-01

    We report the modulation and relaxation characteristics in the two-dimensional electron gas system at LaAlO3/SrTiO3 heterointerface induced by the ultraviolet light illumination (365 nm). The suppression of Kondo effect at the interface illuminated by the light originates from the light irradiation-induced decoherence effect of localized states. It is interesting to note that the persistent and transient photoinduced effects are simultaneously observed and the photoinduced maximum change values in resistance are 80.8% and 51.4% at T = 20 K, respectively. Moreover, the photoinduced relaxation processes after the irradiation are systematically analyzed using the double exponential model. These results provide the deeper understanding of the photoinduced effect and the experimental evidence of tunable Kondo effect in oxides-based two-dimensional electron gas systems.

  16. High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

    KAUST Repository

    Nazir, Safdar; Schwingenschlö gl, Udo; Upadhyay Kahaly, M.

    2012-01-01

    A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.

  17. Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3/In memristive devices

    International Nuclear Information System (INIS)

    Yang, M; Bao, D H; Li, S W

    2013-01-01

    Memristive devices are triggering innovations in the fields of nonvolatile memory, digital logic, analogue circuits, neuromorphic engineering, and so on. Creating new memristive devices with unique characteristics would be significant for these emergent applications. Here we report the coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO 3 (NSTO)/In memristive devices. The Pt/NSTO interface contributes a nonvolatile resistive switching behaviour, whereas the NSTO/In interface displays a volatile hysteresis loop. Combining the two interfaces in the Pt/NSTO/In devices leads to the unique coexistence of nonvolatility and volatility. The results imply more opportunities to invent new memristive devices by engineering both interfaces in metal/insulator/metal structures. (paper)

  18. Photoconductive response of a single Au nanorod coupled to LaAlO3/SrTiO3 nanowires

    International Nuclear Information System (INIS)

    Jnawali, Giriraj; Chen, Lu; Huang, Mengchen; Lee, Hyungwoo; Ryu, Sangwoo; Podkaminer, Jacob P.; Eom, Chang-Beom; Irvin, Patrick; Levy, Jeremy

    2015-01-01

    Terahertz (THz) spectroscopy is an important tool that provides resonant access to free carrier motion, molecular rotation, lattice vibrations, excitonic, spin, and other degrees of freedom. Current methods using THz radiation suffer from limits due to diffraction or low-sensitivity, preventing application at the scale of single nanoscale objects. Here, we present coupling between plasmonic degrees of freedom in a single gold nanorod and broadband THz emission generated from a proximal LaAlO 3 /SrTiO 3 nanostructure. A strong enhancement of THz emission is measured for incident radiation that is linearly polarized along the long axis of the nanorod. This demonstration paves the way for the investigation of near-field plasmonic coupling in a variety of molecular-scale systems

  19. Tunable Electron-Electron Interactions in LaAlO_{3}/SrTiO_{3} Nanostructures

    Directory of Open Access Journals (Sweden)

    Guanglei Cheng

    2016-12-01

    Full Text Available The interface between the two complex oxides LaAlO_{3} and SrTiO_{3} has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of “sketched” quantum dot devices revealed a phase in which electrons form pairs, implying a strongly attractive electron-electron interaction. Here, we show that these devices with strong electron-electron interactions can exhibit a gate-tunable transition from a pair-tunneling regime to a single-electron (Andreev bound state tunneling regime where the interactions become repulsive. The electron-electron interaction sign change is associated with a Lifshitz transition where the d_{xz} and d_{yz} bands start to become occupied. This electronically tunable electron-electron interaction, combined with the nanoscale reconfigurability of this system, provides an interesting starting point towards solid-state quantum simulation.

  20. Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

    2015-01-01

    LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO 3 films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application

  1. Titan Casts Revealing Shadow

    Science.gov (United States)

    2004-05-01

    diameter, which corresponds to the size of a dime as viewed from about two and a half miles. Illustration of Crab, Titan's Shadow and Chandra Illustration of Crab, Titan's Shadow and Chandra Unlike almost all of Chandra's images which are made by focusing X-ray emission from cosmic sources, Titan's X-ray shadow image was produced in a manner similar to a medical X-ray. That is, an X-ray source (the Crab Nebula) is used to make a shadow image (Titan and its atmosphere) that is recorded on film (Chandra's ACIS detector). Titan's atmosphere, which is about 95% nitrogen and 5% methane, has a pressure near the surface that is one and a half times the Earth's sea level pressure. Voyager I spacecraft measured the structure of Titan's atmosphere at heights below about 300 miles (500 kilometers), and above 600 miles (1000 kilometers). Until the Chandra observations, however, no measurements existed at heights in the range between 300 and 600 miles. Understanding the extent of Titan's atmosphere is important for the planners of the Cassini-Huygens mission. The Cassini-Huygens spacecraft will reach Saturn in July of this year to begin a four-year tour of Saturn, its rings and its moons. The tour will include close flybys of Titan that will take Cassini as close as 600 miles, and the launching of the Huygens probe that will land on Titan's surface. Chandra's X-ray Shadow of Titan Chandra's X-ray Shadow of Titan "If Titan's atmosphere has really expanded, the trajectory may have to be changed." said Tsunemi. The paper on these results has been accepted and is expected to appear in a June 2004 issue of The Astrophysical Journal. Other members of the research team were Haroyoski Katayama (Osaka University), David Burrows and Gordon Garmine (Penn State University), and Albert Metzger (JPL). Chandra observed Titan from 9:04 to 18:46 UT on January 5, 2003, using its Advanced CCD Imaging Spectrometer instrument. NASA's Marshall Space Flight Center, Huntsville, Ala., manages the Chandra

  2. The field induced e31,f piezoelectric and Rayleigh response in barium strontium titanate thin films

    International Nuclear Information System (INIS)

    Garten, L. M.; Trolier-McKinstry, S.

    2014-01-01

    The electric field induced e 31,f piezoelectric response and tunability of Ba 0.7 Sr 0.3 TiO 3 (70:30) and Ba 0.6 Sr 0.4 TiO 3 (60:40) thin films on MgO and silicon was measured. The relative dielectric tunabilities for the 70:30 and 60:40 compositions on MgO were 83% and 70%, respectively, with a dielectric loss of less than 0.011 and 0.004 at 100 kHz. A linear increase in induced piezoelectricity to −3.0 C/m 2 and −1.5 C/m 2 at 110 kV/cm was observed in Ba 0.6 Sr 0.4 TiO 3 on MgO and Ba 0.7 Sr 0.3 TiO 3 on Si. Hysteresis in the piezoelectric and dielectric response of the 70:30 composition films was consistent with the positive irreversible dielectric Rayleigh coefficient. Both indicate a ferroelectric contribution to the piezoelectric and dielectric response over 40–80 °C above the global paraelectric transition temperature.

  3. Accounting for the various contributions to pyroelectricity in lead zirconate titanate thin films

    Science.gov (United States)

    Hanrahan, B.; Espinal, Y.; Neville, C.; Rudy, R.; Rivas, M.; Smith, A.; Kesim, M. T.; Alpay, S. P.

    2018-03-01

    An understanding of the pyroelectric coefficient and particularly its relationship with the applied electric field is critical to predicting the device performance for infrared imaging, energy harvesting, and solid-state cooling devices. In this work, we compare direct measurements of the pyroelectric effect under pulsed heating to the indirect extraction of the pyroelectric coefficient from adiabatic hysteresis loops and predictions from Landau-Devonshire theory for PbZr0.52Ti0.48O3 (PZT 52/48) on platinized silicon substrates. The differences between these measurements are explained through a series of careful measurements that quantify the magnitude and direction of the secondary and field-induced pyroelectric effects. The indirect measurement is shown to be up to 25% of the direct measurement at high fields, while the direct measurements and theoretical predictions converge at high fields as the film approaches a mono-domain state. These measurements highlight the importance of directly measuring the pyroelectric response in thin films, where non-intrinsic effects can be a significant proportion of the total observed pyroelectricity. Material and operating conditions are also discussed which could simultaneously maximize all contributions to pyroelectricity.

  4. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio; Eyert, V.; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid

  5. Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO3/SrTiO3/SmTiO3 Quantum Well Structures.

    Science.gov (United States)

    Hardy, Will J; Isaac, Brandon; Marshall, Patrick; Mikheev, Evgeny; Zhou, Panpan; Stemmer, Susanne; Natelson, Douglas

    2017-04-25

    Heterointerfaces of SrTiO 3 with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO 3 /SrTiO 3 , support a high carrier density electron gas at the interface whose electronic properties are determined by a combination of lattice distortions, spin-orbit coupling, defects, and various regimes of magnetic and charge ordering. Here, we study electronic transport in mesoscale devices made with heterostructures of SrTiO 3 sandwiched between layers of SmTiO 3 , in which the transport properties can be tuned from a regime of Fermi-liquid like resistivity (ρ ∝ T 2 ) to a non-Fermi liquid (ρ ∝ T 5/3 ) by controlling the SrTiO 3 thickness. In mesoscale devices at low temperatures, we find unexpected voltage fluctuations that grow in magnitude as T is decreased below 20 K, are suppressed with increasing contact electrode size, and are independent of the drive current and contact spacing distance. Magnetoresistance fluctuations are also observed, which are reminiscent of universal conductance fluctuations but not entirely consistent with their conventional properties. Candidate explanations are considered, and a mechanism is suggested based on mesoscopic temporal fluctuations of the Seebeck coefficient. An improved understanding of charge transport in these model systems, especially their quantum coherent properties, may lead to insights into the nature of transport in strongly correlated materials that deviate from Fermi liquid theory.

  6. Charge transfer mechanism for the formation of metallic states at the KTaO3/SrTiO3 interface

    KAUST Repository

    Nazir, Safdar; Schwingenschlö gl, Udo; Singh, Nirpendra

    2011-01-01

    The electronic and optical properties of the KTaO3/SrTiO3 heterointerface are analyzed by the full-potential linearized augmented plane-wave approach of density functional theory. Optimization of the atomic positions points at subordinate changes

  7. Suppression of the two-dimensional electron gas in LaGaO3/SrTiO3 by cation intermixing

    KAUST Repository

    Nazir, S.; Amin, B.; Schwingenschlö gl, Udo

    2013-01-01

    Cation intermixing at the n-type polar LaGaO 3 /SrTiO 3 (001) interface is investigated by first principles calculations. Ti"Ga, Sr"La, and SrTi"LaGa intermixing are studied in comparison to each other, with a focus on the interface stability. We

  8. Quenched Magnon excitations by oxygen sublattice reconstruction in (SrCuO 2) n /(SrTiO 3) 2 superlattices

    NARCIS (Netherlands)

    Dantz, M.; Pelliciari, J.; Samal, D.; Bisogni, V.; Huang, Y.; Olalde-Velasco, P.; Strocov, V. N.; Koster, G.; Schmitt, T.

    2016-01-01

    The recently discovered structural reconstruction in the cuprate superlattice (SrCuO 2) n /(SrTiO 3) 2 has been investigated across the critical value of n = 5 using resonant inelastic x-ray scattering (RIXS). We find that at the critical value of n, the cuprate layer remains largely in the

  9. Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

    DEFF Research Database (Denmark)

    Bjorlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci

    2018-01-01

    A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demo...

  10. New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

    KAUST Repository

    Dehkordi, Arash Mehdizadeh; Bhattacharya, Sriparna; Darroudi, Taghi; Alshareef, Husam N.; Tritt, Terry M.

    2015-01-01

    versus Pr6O11) on the synthesis and electronic transport in Pr-doped SrTiO3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our

  11. Three-dimensional self-branching anatase TiO_2 nanorods with the improved carrier collection for SrTiO_3-based perovskite solar cells

    International Nuclear Information System (INIS)

    Hu, Yajing; Wang, Chen; Tang, Ying; Huang, Lu; Fu, Jianxun; Shi, Weimin; Wang, Linjun; Yang, Weiguang

    2016-01-01

    The organic–inorganic perovskite solar cells based on ternary oxide SrTiO_3 shows a higher Voc, attributed to its slightly higher conduction band edge and better morphology of absorber material. However, its less efficient carrier collection and limited overall interfacial areas between the absorber material and the electron-transport layer (ETL), dramatically reducing the Jsc. Here, By adjusting the concentrations of the Ti(OBu)_4, we successfully prepared the three-dimensional (3D) self-branching anatase TiO_2 nanorod/SrTiO_3 nanocomposites, and slightly tuned the particle size of SrTiO_3. With the incorporation of the three-dimensional (3D) self-branching anatase TiO_2 nanorod, the Jsc of the device based on SrTiO_3 was highly boosted. The best performing solar cell we obtained exhibited a PCE of 9.99% with a Jsc of 19.48 mA/cm"2. The excellent performance could be ascribed to the improvement of charge carrier collection of SrTiO_3, better surface coverage and crystallinity of CH_3NH_3PbI_3, and enhanced light scattering ability caused by 3D self-branching anatase TiO_2 nanorods. - Highlights: • The three-dimensional (3D) self-branching anatase TiO_2 nanorod/SrTiO_3 nanocomposites were prepared. • The particle sizes of SrTiO_3 can be slightly tuned. • The best performing solar cell we obtained exhibited a PCE of 9.99% with the Jsc of 19.48 mA/cm"2.

  12. Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

    Directory of Open Access Journals (Sweden)

    Junsheng Liang

    2016-01-01

    Full Text Available Dense and crack-free barium titanate (BaTiO3, BTO thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

  13. Improvement in crystallization and electrical properties of barium strontium titanate thin films by gold doping using metal-organic deposition method

    International Nuclear Information System (INIS)

    Wang, H.-W.; Nien, S.-W.; Lee, K.-C.; Wu, M.-C.

    2005-01-01

    The effect of gold (Au) on the crystallization, dielectric constant and leakage current density of barium strontium titanate (BST) thin films was investigated. BST thin films with various gold concentrations were prepared via a metal-organic deposition process. The X-ray diffraction shows enhanced crystallization as well as expanded lattice constants for the gold-doped BST films. Thermal analysis reveals that the gold dopant induces more complete decomposition of precursor for the doped films than those of undoped ones. The leakage current density of BST films is greatly reduced by the gold dopant over a range of biases (1-5 V). The distribution of gold was confirmed by electron energy loss spectroscopy and found to be inside the BST grains, not in the grain-boundaries. Gold acted as a catalyst, inducing the nucleation of crystallites and improving the crystallinity of the structure. Its addition is shown to be associated to the improvement of the electrical properties of BST films

  14. Structure and magnetism of metastable Fe nanoparticles in SrTiO3

    CERN Document Server

    Augustyns, Valerie; Pereira, Lino

    2017-08-30

    Iron (Fe), one of the most abundant elements on Earth, can appear in different structural phases associated with contrasting magnetic properties, depending on temperature and pressure. The most common phase is alpha-Fe, which has a body-centered cubic (bcc) structure and is ferromagnetic. Another iron allotrope, gamma-Fe, a high temperature phase in bulk, has a face-centered cubic structure (fcc). However, this iron allotrope has been stabilized at room temperature in nanostructures, namely in thin films or nanoparticles. In these structures, where one or more dimensions are in the nanoscale regime, the structural and magnetic properties can be different from those of bulk gamma-Fe. Whereas bulk gamma-Fe is antiferromagnetic, different magnetic states have been reported for gamma-Fe thin films. When ferromagnetism was observed, this was associated with a face-centered tetragonal (fct) distortion in the gamma-Fe thin film. In this thesis, the coupling between structure and magnetism in embedded gamma-Fe nanop...

  15. Damage-free patterning of ferroelectric lead zirconate titanate thin films for microelectromechanical systems via contact printing

    Science.gov (United States)

    Welsh, Aaron

    This thesis describes the utilization and optimization of the soft lithographic technique, microcontact printing, to additively pattern ferroelectric lead zirconate titanate (PZT) thin films for application in microelectromechanical systems (MEMS). For this purpose, the solution wetting, pattern transfer, printing dynamics, stamp/substrate configurations, and processing damages were optimized for incorporation of PZT thin films into a bio-mass sensor application. This patterning technique transfers liquid ceramic precursors onto a device stack in a desired configuration either through pattern definition in the stamp, substrate or both surfaces. It was determined that for ideal transfer of the pattern from the stamp to the substrate surface, wetting between the solution and the printing surface is paramount. To this end, polyurethane-based stamp surfaces were shown to be wet uniformly by polar solutions. Patterned stamp surfaces revealed that printing from raised features onto flat substrates could be accomplished with a minimum feature size of 5 mum. Films patterned by printing as a function of thickness (0.1 to 1 mum) showed analogous functional properties to continuous films that were not patterned. Specifically, 1 mum thick PZT printed features had a relative permittivity of 1050 +/- 10 and a loss tangent of 2.0 +/- 0.4 % at 10 kHz; remanent polarization was 30 +/- 0.4 muC/cm 2 and the coercive field was 45 +/- 1 kV/cm; and a piezoelectric coefficient e31,f of -7 +/- 0.4 C/m2. No pinching in the minor hysteresis loops or splitting of the first order reversal curve (FORC) distributions was observed. Non-uniform distribution of the solution over the printed area becomes more problematic as feature size is decreased. This resulted in solutions printed from 5 mum wide raised features exhibiting a parabolic shape with sidewall angles of ˜ 1 degree. As an alternative, printing solutions from recesses in the stamp surface resulted in more uniform solution thickness

  16. Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

    KAUST Repository

    Han, Wei; Jiang, Xin; Kajdos, Adam; Yang, See-Hun; Stemmer, Susanne; Parkin, Stuart S. P.

    2013-01-01

    as the temperature is decreased to low temperatures. However, the mobility of the strontium titanate has a strong temperature dependence. This behaviour and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin

  17. Self-assembled single-phase perovskite nanocomposite thin films.

    Science.gov (United States)

    Kim, Hyun-Suk; Bi, Lei; Paik, Hanjong; Yang, Dae-Jin; Park, Yun Chang; Dionne, Gerald F; Ross, Caroline A

    2010-02-10

    Thin films of perovskite-structured oxides with general formula ABO(3) have great potential in electronic devices because of their unique properties, which include the high dielectric constant of titanates, (1) high-T(C) superconductivity in cuprates, (2) and colossal magnetoresistance in manganites. (3) These properties are intimately dependent on, and can therefore be tailored by, the microstructure, orientation, and strain state of the film. Here, we demonstrate the growth of cubic Sr(Ti,Fe)O(3) (STF) films with an unusual self-assembled nanocomposite microstructure consisting of (100) and (110)-oriented crystals, both of which grow epitaxially with respect to the Si substrate and which are therefore homoepitaxial with each other. These structures differ from previously reported self-assembled oxide nanocomposites, which consist either of two different materials (4-7) or of single-phase distorted-cubic materials that exhibit two or more variants. (8-12) Moreover, an epitaxial nanocomposite SrTiO(3) overlayer can be grown on the STF, extending the range of compositions over which this microstructure can be formed. This offers the potential for the implementation of self-organized optical/ferromagnetic or ferromagnetic/ferroelectric hybrid nanostructures integrated on technologically important Si substrates with applications in magnetooptical or spintronic devices.

  18. Strain-induced properties of epitaxial VOx thin films

    NARCIS (Netherlands)

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  19. Photoelectrochemical Properties of FeO Supported on TiO2-Based Thin Films Converted from Self-Assembled Hydrogen Titanate Nanotube Powders

    Directory of Open Access Journals (Sweden)

    Kyung-Jong Noh

    2012-01-01

    Full Text Available A photoanode was fabricated using hematite (α-Fe2O3 nanoparticles which had been held in a thin film of hydrogen titanate nanotubes (H-TiNT, synthesized by repetitive self-assembling method on FTO (fluorine-doped tin oxide glass, which were incorporated via dipping process in aqueous Fe(NO33 solution. Current voltage (I-V electrochemical properties of the photoanode heat-treated at 500°C for 10 min in air were evaluated under ultraviolet-visible light irradiation. Microstructure and crystallinity changes were also investigated. The prepared Fe2O3/H-TiNT/FTO composite thin film exhibited about threefold as much photocurrent as the Fe2O3/FTO film. The improvement in photocurrent was considered to be caused by reduced recombination of electrons and holes, with an appropriate amount of Fe2O3 spherical nanoparticles supported on the H-TiNT/FTO film. Nanosized spherical Fe2O3 particles with about 65 wt% on the H-TiNT/FTO film showed best performance in our study.

  20. Study of interface properties in LaAlO3/SrTiO3 heterostructures

    International Nuclear Information System (INIS)

    Thiel, Stefan Patrick

    2009-01-01

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  1. Electron-density distribution in cubic SrTiO3: a comparative γ-ray diffraction study

    International Nuclear Information System (INIS)

    Jauch, W.; Reehuis, M.

    2005-01-01

    The electron density and atomic displacements in the perovskite SrTiO 3 have been studied using extensive and accurate γ-ray diffraction data (λ=0.0392 Aa) at room temperature. The six strongest low-order structure factors have been determined under extinction-free conditions. Gram-Charlier series expansion of the thermal parameters have revealed no evidence for anharmonicity. The population of the 3d subshell on Ti is found to be close to zero, in agreement with the observed magnetic behaviour. The electronic properties at the bond critical points indicate ionic Ti-O and Sr-O interactions of different strengths, which is corroborated by the net charges of the atomic basins [q(Sr)=1.18 vertical stroke e vertical stroke, q(Ti)=3.10 vertical stroke e vertical stroke, q(O)=1.42 vertical stroke e vertical stroke ]. A critical comparison is made with earlier experimental results from laboratory X-ray, synchrotron X-ray, electron and neutron diffraction studies. Agreement and discrepancies are identified and resolved. (orig.)

  2. Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Sang Woon Lee

    2016-01-01

    Full Text Available Two-dimensional electron gas (2DEG at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3 (LAO/STO heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies.

  3. Solid-gate control of insulator to 2D metal transition at SrTiO3 surface

    Science.gov (United States)

    Schulman, Alejandro; Stoliar, Pablo; Kitoh, Ai; Rozenberg, Marcelo; Inoue, Isao H.

    As miniaturization of the semiconductor transistor approaches its limit, semiconductor industries are facing a major challenge to extend information processing beyond what can be attainable by conventional Si-based transistors. Innovative combinations of new materials and new processing platforms are desired. Recent discovery of the 2D electron gas (2DEG) at the surface of SrTiO3 (STO) and its electrostatic control, have carried it to the top of promising materials to be utilized in innovative devices. We report an electrostatic control of the carrier density of the 2DEG formed at the channel of bilayer-gated STO field-effect devices. By applying a gate electric field at room temperature, its highly insulating channel exhibits a transition to metallic one. This transition is accompanied by non-monotonic voltage-gain transfer characteristic with both negative and positive slope regions and unexpected enhancement of the sheet carrier density. We will introduce a numerical model to rationalize the observed features in terms of the established physics of field-effect transistors and the physics of percolation. Furthermore, we have found a clear signature of a Kondo effect that arises due to the interaction between the dilute 2DEG and localized Ti 3d orbitals originated by oxygen vacancies near the channel. On leave from CIC nanoGUNE, Spain.

  4. Adsorptive and photocatalytic properties of S-doped SrTiO3 under simulated solar irradiation

    Science.gov (United States)

    Huynh, Phu Chi; Le, Vien Minh

    2017-09-01

    S-doped SrTiO3 (SSTO) nanoparticles were synthesized using the sol-gel method with Sr(NO3)2, n- Ti(OC4H9)4, and Thiourea as precursors. Several analytical techniques including XRD, SEM, BET were employed to characterize the physical properties of the product. High crystalline perovskite of SSTO powder was synthesized at 700 °C calcined temperature with the specific surface area of 20.71 m2/g. UV-Vis diffuse reflectance spectra results of STO and 5SSTO present band gap energy of 3.2 and 2.95 eV respectively. Photocatalytic activity was determined through the photodegradation of Congo Red at the initial concentrations of 70 ppm under simulated solar irradiation using 26W mercury lamp (120V - 60Hz). The decompositions of approximately 90.4% was obtained after 210 minutes of illumination. The photocatalyst was stable in aqueous solution that its photocatalytic activity was merely reduced by 9% even after 4 reusing iterations.

  5. Perovskite oxide SrTiO3 as an efficient electron transporter for hybrid perovskite solar cells

    KAUST Repository

    Bera, Ashok

    2014-12-11

    In this work, we explored perovskite oxide SrTiO3 (STO) for the first time as the electron-transporting layer in organolead trihalide perovskite solar cells. The steady-state photoluminescence (PL) quenching and transient absorption experiments revealed efficient photoelectron transfer from CH3NH3PbI3-xClx to STO. Perovskite solar cells with meso-STO exhibit an open circuit voltage of 1.01 V, which is 25% higher than the value of 0.81 V achieved in the control device with the conventional meso-TiO2. In addition, an increase of 17% in the fill factor was achieved by tailoring the thickness of the meso-STO layer. We found that the application of STO leads to uniform perovskite layers with large grains and complete surface coverage, leading to a high shunt resistance and improved performance. These findings suggest STO as a competitive candidate as electron transport material in organometal perovskite solar cells.

  6. Spin-Orbit Interaction and Kondo Scattering at the PrAlO3/SrTiO3 Interface

    Science.gov (United States)

    Mozaffari, Shirin; Guchhait, Samaresh; Markert, John

    We have investigated the effect of oxygen content, in the PO2 range of 6 ×10-6 - 1 ×10-3 torr, on the spin-orbit (SO) interaction at PrAlO3/SrTiO3 interface. The most-conducting 2-D-like PrAlO3 interfaces were not as conducting as comparable LaAlO3 samples, indicating either a steric or mixed-valent effect. The least-conducting, most oxygenated PrAlO3 interface exhibits hole conductivity, a departure from the typical electron-doped behavior. For 10-5 and 10-4 torr samples, high-temperature metallic behavior is accompanied by an upturn in resistivity at low temperatures, consistent with Kondo scattering theory; analysis gives a Kondo temperature 17 K. The magnetoresistance (MR) for the low PO2-grown samples was modeled with a positive part due to weak anti-localization (WAL) from a strong SO interaction, and a negative part due to the Kondo effect. The variation of MR suggests a strong SO interaction for the 10-5 torr sample with HSO = 1.25 T in both field orientations. The WAL effect is smaller for higher PO2-grown samples, where the high-field MR is dominated by the Kondo effect.

  7. Adsorption of hazardous cationic dye onto the combustion derived SrTiO3 nanoparticles: Kinetic and isotherm studies

    Directory of Open Access Journals (Sweden)

    N.P. Bhagya

    2016-03-01

    Full Text Available In this article we report on solution combustion method to synthesize SrTiO3 nanoparticles (ST-NPs and the removal of malachite green (MG azo dye from the aqueous solution. The synthesized ST-NPs were calcined at 600 °C for 2 h. Powder X-ray diffraction (PXRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, Fourier transform infrared spectroscopy (FT-IR, and Brunauer–Emmett–Teller (BET were used to characterize the product. Adsorption experiments were performed with cationic malachite green (MG dye. ∼98% dye was adsorbed onto the ST-NPs at pH 10 for 30 min of the contact time. The optimum adsorbent dose was found to be 0.015 g/L of the dye. To study the adsorption kinetics Langmuir Hinshelwood model was used and the first order kinetic best describes the MG adsorption onto the ST-NPs. The adsorption isotherms data of MG onto ST-NPs obtained were analyzed by Langmuir and Freundlich isotherm models and the results describe the best representation of the Langmuir isotherm model.

  8. Effective theory of exotic superconductivity in LaAlO3/SrTiO3 interfaces

    Science.gov (United States)

    Esmailzadeh, Haniyeh; Moghaddam, Ali G.

    2018-05-01

    Motivated by experimental and theoretical works about superconductivity at the oxide interfaces, we provide a simple model for possible unconventional pairings inside the exotic two-dimensional electron gas formed in heterostructures of SrTiO3 and LaAlO3. At the low energy limit, the electron gas at the interfaces is usually modeled with an effective three band model considering of 3d t2g orbitals which are slightly coupled by atomic spin-orbit couplings (SOC). Considering direct superconducting pairing in two higher delocalized bands and by exploiting a perturbative scheme based on canonical transformation, we derive the effective pairing amplitudes with possibly exotic nature inside the localized dxy band as well as various inter-band pairing components. In particular we show that equal-spin triplet pairings are possible between the band dxy and any of other dxz and dyz bands. In addition weaker effective pairings take place inside the localized band itself and between delocalized dxz and dyz bands with singlet and opposite-spin triplet characters. These unconventional effective pairings are indeed mediated by SOC-induced higher order virtual transitions between the bands and particularly into the localized band. Our model suggest that unconventional effective superconductivity is possible at oxide interfaces, simply, due to the special band structure and important role of atomic SOC and perhaps other magnetic effects present at these heterostructures.

  9. A versatile light-switchable nanorod memory: Wurtzite ZnO on perovskite SrTiO3

    KAUST Repository

    Kumar, Anup Bera

    2013-04-25

    Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low-temperature solution-based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light-switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Perovskite oxide SrTiO3 as an efficient electron transporter for hybrid perovskite solar cells

    KAUST Repository

    Bera, Ashok; Wu, Kewei; Sheikh, Arif D.; Alarousu, Erkki; Mohammed, Omar F.; Wu, Tao

    2014-01-01

    In this work, we explored perovskite oxide SrTiO3 (STO) for the first time as the electron-transporting layer in organolead trihalide perovskite solar cells. The steady-state photoluminescence (PL) quenching and transient absorption experiments revealed efficient photoelectron transfer from CH3NH3PbI3-xClx to STO. Perovskite solar cells with meso-STO exhibit an open circuit voltage of 1.01 V, which is 25% higher than the value of 0.81 V achieved in the control device with the conventional meso-TiO2. In addition, an increase of 17% in the fill factor was achieved by tailoring the thickness of the meso-STO layer. We found that the application of STO leads to uniform perovskite layers with large grains and complete surface coverage, leading to a high shunt resistance and improved performance. These findings suggest STO as a competitive candidate as electron transport material in organometal perovskite solar cells.

  11. Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

    KAUST Repository

    Sarath Kumar, S. R.; Hedhili, Mohamed N.; Cha, Dong Kyu; Tritt, Terry M.; Alshareef, Husam N.

    2014-01-01

    A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

  12. Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

    KAUST Repository

    Sarath Kumar, S. R.

    2014-04-22

    A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

  13. Fabrication of barium titanate nanoparticles/poly (methylmethacrylate composite films by a combination of deposition process and spin-coating technique

    Directory of Open Access Journals (Sweden)

    Yoshio Kobayashi

    2014-10-01

    Full Text Available The present work proposes a method for fabricating poly(methylmethacrylate (PMMA film containing barium titanate (BT nanoparticles (BT/PMMA film. BT particles with an average size of 77.6 ± 30.5 nm and a crystal size of 28.1 nm were synthesized by adding sodium hydroxide aqueous solution to titanium tetraisopropoxide/acetylacetone/i-propanol solution suspending barium hydroxide. A sodium glass plate, of which surface was modified with polyvinylpyrrolidone, was immersed into water suspending the BT particles, which resulted in deposition of the BT particles on the plate. A BT/PMMA film was fabricated by twice performance of a process composed of spin-coating of N-methyl-2-pyrrolidone (NMP dissolving PMMA on the plate, and then drying the coated plate in the atmosphere at room temperature. Spin-coating of a PMMA/NMP solution with a PMMA concentration of 150 g/L at a rotating speed of 5000 rpm provided fabrication of a BT/PMMA film with a BT volume fraction of 35.5%, a thickness of ca. 300 nm, and a transmittance of ca. 90% in the visible light region.

  14. Creating Two-Dimensional Electron Gas in Nonpolar/Nonpolar Oxide Interface via Polarization Discontinuity: First-Principles Analysis of CaZrO3/SrTiO3 Heterostructure.

    Science.gov (United States)

    Nazir, Safdar; Cheng, Jianli; Yang, Kesong

    2016-01-13

    We studied strain-induced polarization and resulting conductivity in the nonpolar/nonpolar CaZrO3/SrTiO3 (CZO/STO) heterostructure (HS) system by means of first-principles electronic structure calculations. By modeling four types of CZO/STO HS-based slab systems, i.e., TiO2/CaO and SrO/ZrO2 interface models with CaO and ZrO2 surface terminations in each model separately, we found that the lattice-mismatch-induced compressive strain leads to a strong polarization in the CZO film and that as the CZO film thickness increases there exists an insulator-to-metal transition. The polarization direction and critical thickness of the CZO film for forming interfacial metallic states depend on the surface termination of CZO film in both types of interface models. In the TiO2/CaO and SrO/ZrO2 interface models with CaO surface termination, the strong polarization drives the charge transfer from the CZO film to the first few TiO2 layers in the STO substrate, leading to the formation of two-dimensional electron gas (2DEG) at the interface. In the HS models with ZrO2 surface termination, two polarization domains with opposite directions are in the CZO film, which results in the charge transfer from the middle CZO layer to the interface and surface, respectively, leading to the coexistence of the 2DEG on the interface and the two-dimensional hole gas (2DHG) at the middle CZO layer. These findings open a new avenue to achieve 2DEG (2DHG) in perovskite-based HS systems via polarization discontinuity.

  15. Tuning the electronic structure of SrTiO3/SrFeO3−x superlattices via composition and vacancy control

    Directory of Open Access Journals (Sweden)

    Robert F. Berger

    2014-04-01

    Full Text Available Using density functional theory-based calculations, we explore the effects of oxygen vacancies and epitaxial layering on the atomic, magnetic, and electronic structure of (SrTiO3n(SrFeO3−x1 superlattices. While structures without oxygen vacancies (x = 0 possess small or non-existent band gaps and ferromagnetic ordering in their iron layers, those with large vacancy concentrations (x = 0.5 have much larger gaps and antiferromagnetic ordering. Though the computed gaps depend numerically on the delicate energetic balance of vacancy ordering and on the value of Hubbard U eff used in the calculations, we demonstrate that changes in layering can tune the band gaps of these superlattices below that of SrTiO3 (3.2 eV by raising their valence band maxima. This suggests the possibility that these superlattices could absorb in the solar spectrum, and could serve as water-splitting photocatalysts.

  16. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

    Science.gov (United States)

    Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

    2018-05-01

    We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

  17. Transport and magnetoresistance effect in an oxygen-deficient SrTiO3/La0.67Sr0.33MnO3 heterojunction

    International Nuclear Information System (INIS)

    Wang Jing; Chen Chang-Le; Yang Shi-Hai; Luo Bing-Cheng; Duan Meng-Meng; Jin Ke-Xin

    2013-01-01

    An oxygen-deficient SrTiO 3 /La 0.67 Sr 0.33 MnO 3 heterojunction is fabricated on an SrTiO 3 (001) substrate by a pulsed laser deposition method. The electrical characteristics of the heterojunction are studied systematically in a temperature range from 80 K to 300 K. The transport mechanism follows I ∞ exp(eV/nkT) under small forward bias, while it becomes space charge limited and follows I ∞ V m(T) with 1.49 < m < 1.99 under high bias. Such a heterojunction also exhibits magnetoresistance (MR) effect. The absolute value of negative MR monotonically increases with temperature decreasing and reaches 26.7% at 80 K under H = 0.7 T. Various factors, such as strain and oxygen deficiency play dominant roles in the characteristics. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. High mobility half-metallicity in the (LaMnO3)2/(SrTiO3)8 superlattice

    KAUST Repository

    Cossu, Fabrizio

    2013-01-28

    First principles calculations have been performed to investigate the LaMnO3/SrTiO3 superlattice. Structural relaxation within the generalized gradient approximation results in no significant tiltings or rotations of oxygen octahedra, but in distinct distortions in the SrTiO3 region. Taking into account the onsite Coulomb interaction, we find that the Mn spins order ferromagnetically, in contrast to the antiferromagnetic state of bulk LaMnO3. Most importantly, the interface strain combined with charge transfer across the interface induces half-metallicity within the MnO2 layers. The superlattice is particulary interesting for spintronics applications because the half-metallic states are characterized by an extraordinary high mobility.

  19. Strain effects on the spin polarized electron gas in ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures

    KAUST Repository

    Nazir, Safdar

    2013-04-11

    The spin polarized two dimensional electron gas in the correlated ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures is investigated by ab-initio calculations using density functional theory. Structural relaxation shows a strong buckling at and near the TiO2 terminated n-type interface (IFs) due to significant TiO6 octahedral distortions. We find in all cases, metallic states in a very narrow region of the SrTiO3, in agreement with experimental results. We demonstrate that the interface magnetism strongly reacts to the magnitude of the lattice strain. The orbital occupations and, hence, the charge carrier density change systematically as a function of the lattice mismatch between the component materials.

  20. High mobility half-metallicity in the (LaMnO3)2/(SrTiO3)8 superlattice

    KAUST Repository

    Cossu, Fabrizio; Schwingenschlö gl, Udo; Singh, Nirpendra

    2013-01-01

    First principles calculations have been performed to investigate the LaMnO3/SrTiO3 superlattice. Structural relaxation within the generalized gradient approximation results in no significant tiltings or rotations of oxygen octahedra, but in distinct distortions in the SrTiO3 region. Taking into account the onsite Coulomb interaction, we find that the Mn spins order ferromagnetically, in contrast to the antiferromagnetic state of bulk LaMnO3. Most importantly, the interface strain combined with charge transfer across the interface induces half-metallicity within the MnO2 layers. The superlattice is particulary interesting for spintronics applications because the half-metallic states are characterized by an extraordinary high mobility.

  1. Strain effects on the spin polarized electron gas in ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures

    KAUST Repository

    Nazir, Safdar; Schwingenschlö gl, Udo

    2013-01-01

    The spin polarized two dimensional electron gas in the correlated ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures is investigated by ab-initio calculations using density functional theory. Structural relaxation shows a strong buckling at and near the TiO2 terminated n-type interface (IFs) due to significant TiO6 octahedral distortions. We find in all cases, metallic states in a very narrow region of the SrTiO3, in agreement with experimental results. We demonstrate that the interface magnetism strongly reacts to the magnitude of the lattice strain. The orbital occupations and, hence, the charge carrier density change systematically as a function of the lattice mismatch between the component materials.

  2. Training effect of exchange bias in La0.67Sr0.33MnO3/SrTiO3 superlattice

    International Nuclear Information System (INIS)

    Zhu, S J; Zhao, B R; Xu, B; Zhu, B Y; Cao, L X; Qiu, X G

    2008-01-01

    The training effect of exchange bias has been observed in the superlattice consisting of ferromagnetic La 0.67 Sr 0.33 MnO 3 and non-magnetic SrTiO 3 layers. The exchange field shows an approximately power-law decrease with an increase in the number of hysteresis loop measurements. The vertical shift of the hysteresis loop reveals the existence of the net uncompensated spins at the interface between the La 0.67 Sr 0.33 MnO 3 and the SrTiO 3 layers. The irreversibility of magnetization measurements gives clear evidence that the interfacial spins will be frozen at low temperature. It is suggested that the frozen uncompensated spins at the interface are responsible for the shift of the hysteresis loop and the training effect of exchange bias might be a result of the relaxation process of those interfacial spins when the superlattice is consecutively field-cycled.

  3. Modification of Ag nanoparticles on the surface of SrTiO3 particles and resultant influence on photoreduction of CO2

    Science.gov (United States)

    Shao, Kunjuan; Wang, Yanjie; Iqbal, Muzaffar; Lin, Lin; Wang, Kai; Zhang, Xuehua; He, Meng; He, Tao

    2018-03-01

    Modification of a wide-bandgap semiconductor with noble metals that can exhibit surface plasmon effect is an effective approach to make it responsive to the visible light. In this work, a series of cubic and all-edge-truncated SrTiO3 with and without thermal pretreatment in air are modified by Ag nanoparticles via photodeposition method. The crystal structure, morphology, loading amount of Ag nanoparticles, and optical properties of the obtained Ag-SrTiO3 nanomaterials are well characterized by powder X-ray diffraction, scanning microscope, transmission electron microscope, energy disperse X-ray spectroscopy, ICP-MS and UV-vis diffuse-reflection spectroscopy. The loading amount and size of the Ag nanoparticles can be controlled to some extent by tuning the photodeposition time via growth-dissolution mechanism. The Ag nanoparticles are inclined to deposit on different locations on the surface of cubic and truncated SrTiO3 with and without thermal pretreatment. The resultant SrTiO3 modified by Ag nanoparticles exhibits visible light activity for photocatalytic reduction of CO2, which is closely related to the oxygen vacancy induced by thermal pretreatment, size and amount of Ag nanoparticles. Accordingly, there is an optimized photodeposition time for the synthesis of the photocatalyst that exhibits the highest photocatalytic activity.

  4. The dynamics of ultraviolet-induced oxygen vacancy at the surface of insulating SrTiO_3(0 0 1)

    International Nuclear Information System (INIS)

    Suwanwong, S.; Eknapakul, T.; Rattanachai, Y.; Masingboon, C.; Rattanasuporn, S.; Phatthanakun, R.; Nakajima, H.; King, P.D.C.; Hodak, S.K.; Meevasana, W.

    2015-01-01

    Highlights: • The dynamics of UV-induced oxygen vacancy is studied from the change of surface resistance. • The formation of 2DEG at the insulating surface of SrTiO_3 is confirmed by ARPES. • The UV-induced change in resistance responds differently to oxygen/gas exposure. • The behavior of resistance recovery suggests an alternative method of low-pressure sensing. - Abstract: The effect of ultra-violet (UV) irradiation on the electronic structure and the surface resistance of an insulating SrTiO_3(0 0 1) crystal is studied in this work. Upon UV irradiation, we show that the two-dimensional electron gas (2DEG) emerges at the insulating SrTiO_3 surface and there is a pronounced change in the surface resistance. By combining the observations of the change in valance band and the resistance change under different environments of gas pressure and gas species, we find that UV-induced oxygen vacancies at the surface plays a major role in the resistance change. The dynamic of the resistance change at different oxygen pressures also suggests an alternative method of low-pressure sensing.

  5. New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

    International Nuclear Information System (INIS)

    Dehkordi, Arash Mehdizadeh; Bhattacharya, Sriparna; Darroudi, Taghi; Alshareef, Husam N.; Tritt, Terry M.

    2015-01-01

    Recently, we have reported a significant enhancement in the electronic and thermoelectric properties of bulk polycrystalline SrTiO 3 ceramics via praseodymium doping. This improvement was originated from the simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity, which was contributed to the non-uniform distribution of Pr dopants. In order to further understand the underlying mechanism, we herein investigate the role of praseodymium doping source (Pr 2 O 3 versus Pr 6 O 11 ) on the synthesis and electronic transport in Pr-doped SrTiO 3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our synthesis strategy. Theoretical calculations were also performed in order to estimate the maximum achievable power factor and the corresponding optimal carrier concentration. The result suggests the possibility of further improvement of the power factor. This study should shed some light on the superior electronic transport in bulk polycrystalline Pr-doped SrTiO 3 ceramics and provide new insight on further improvement of the thermoelectric power factor

  6. New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

    KAUST Repository

    Dehkordi, Arash Mehdizadeh

    2015-02-07

    Recently, we have reported a significant enhancement in the electronic and thermoelectric properties of bulk polycrystalline SrTiO3 ceramics via praseodymium doping. This improvement was originated from the simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity, which was contributed to the non-uniform distribution of Pr dopants. In order to further understand the underlying mechanism, we herein investigate the role of praseodymium doping source (Pr2O3 versus Pr6O11) on the synthesis and electronic transport in Pr-doped SrTiO3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our synthesis strategy. Theoretical calculations were also performed in order to estimate the maximum achievable power factor and the corresponding optimal carrier concentration. The result suggests the possibility of further improvement of the power factor. This study should shed some light on the superior electronic transport in bulk polycrystalline Pr-doped SrTiO3 ceramics and provide new insight on further improvement of the thermoelectric power factor.

  7. Electrical transport across nanometric SrTiO3 and BaTiO3 barriers in conducting/insulator/conducting junctions

    Science.gov (United States)

    Navarro, H.; Sirena, M.; González Sutter, J.; Troiani, H. E.; del Corro, P. G.; Granell, P.; Golmar, F.; Haberkorn, N.

    2018-01-01

    We report the electrical transport properties of conducting/insulator/conducting heterostructures by studying current-voltage IV curves at room temperature. The measurements were obtained on tunnel junctions with different areas (900, 400 and 100 μm2) using a conducting atomic force microscope. Trilayers with GdBa2Cu3O7 (GBCO) as the bottom electrode, SrTiO3 or BaTiO3 (thicknesses between 1.6 and 4 nm) as the insulator barrier, and GBCO or Nb as the top electrode were grown by DC sputtering on (100) SrTiO3 substrates For SrTiO3 and BaTiO3 barriers, asymmetric IV curves at positive and negative polarization can be obtained using electrodes with different work function. In addition, hysteretic IV curves are obtained for BaTiO3 barriers, which can be ascribed to a combined effect of the FE reversal switching polarization and an oxygen vacancy migration. For GBCO/BaTiO3/GBCO heterostructures, the IV curves correspond to that expected for asymmetric interfaces, which indicates that the disorder affects differently the properties at the bottom and top interfaces. Our results show the role of the interface disorder on the electrical transport of conducting/insulator/conduction heterostructures, which is relevant for different applications, going from resistive switching memories (at room temperature) to Josephson junctions (at low temperatures).

  8. Gate-tunable polarized phase of two-dimensional electrons at the LaAlO3/SrTiO3 interface.

    Science.gov (United States)

    Joshua, Arjun; Ruhman, Jonathan; Pecker, Sharon; Altman, Ehud; Ilani, Shahal

    2013-06-11

    Controlling the coupling between localized spins and itinerant electrons can lead to exotic magnetic states. A novel system featuring local magnetic moments and extended 2D electrons is the interface between LaAlO3 and SrTiO3. The magnetism of the interface, however, was observed to be insensitive to the presence of these electrons and is believed to arise solely from extrinsic sources like oxygen vacancies and strain. Here we show the existence of unconventional electronic phases in the LaAlO3/SrTiO3 system pointing to an underlying tunable coupling between itinerant electrons and localized moments. Using anisotropic magnetoresistance and anomalous Hall effect measurements in a unique in-plane configuration, we identify two distinct phases in the space of carrier density and magnetic field. At high densities and fields, the electronic system is strongly polarized and shows a response, which is highly anisotropic along the crystalline directions. Surprisingly, below a density-dependent critical field, the polarization and anisotropy vanish whereas the resistivity sharply rises. The unprecedented vanishing of the easy axes below a critical field is in sharp contrast with other coupled magnetic systems and indicates strong coupling with the moments that depends on the symmetry of the itinerant electrons. The observed interplay between the two phases indicates the nature of magnetism at the LaAlO3/SrTiO3 interface as both having an intrinsic origin and being tunable.

  9. Electric field tuning of magnetism in heterostructure of yttrium iron garnet film/lead magnesium niobate-lead zirconate titanate ceramic

    Science.gov (United States)

    Lian, Jianyun; Ponchel, Freddy; Tiercelin, Nicolas; Chen, Ying; Rémiens, Denis; Lasri, Tuami; Wang, Genshui; Pernod, Philippe; Zhang, Wenbin; Dong, Xianlin

    2018-04-01

    In this paper, the converse magnetoelectric (CME) effect by electric field tuning of magnetization in an original heterostructure composed of a polycrystalline yttrium iron garnet (YIG) film and a lead magnesium niobate-lead zirconate titanate (PMN-PZT) ceramic is presented. The magnetic performances of the YIG films with different thicknesses under a DC electric field applied to the PMN-PZT ceramics and a bias magnetic field are investigated. All the magnetization-electric field curves are found to be in good agreement with the butterfly like strain curve of the PMN-PZT ceramic. Both the sharp deformation of about 2.5‰ of PMN-PZT and the easy magnetization switching of YIG are proposed to be the reasons for the strongest CME interaction in the composite at the small electric coercive field of PMN-PZT (4.1 kV/cm) and the small magnetic coercive field of YIG (20 Oe) where the magnetic susceptibility reaches its maximum value. A remarkable CME coefficient of 3.1 × 10-7 s/m is obtained in the system with a 600 nm-thick YIG film. This heterostructure combining multiferroics and partially magnetized ferrite concepts is able to operate under a small or even in the absence of an external bias magnetic field and is more compact and power efficient than the traditional magnetoelectric devices.

  10. Epitaxial phase diagrams of SrTiO3, CaTiO3, and SrHfO3: Computational investigation including the role of antiferrodistortive and A -site displacement modes

    Science.gov (United States)

    Angsten, Thomas; Asta, Mark

    2018-04-01

    Ground-state epitaxial phase diagrams are calculated by density functional theory (DFT) for SrTiO3, CaTiO3, and SrHfO3 perovskite-based compounds, accounting for the effects of antiferrodistortive and A -site displacement modes. Biaxial strain states corresponding to epitaxial growth of (001)-oriented films are considered, with misfit strains ranging between -4 % and 4%. Ground-state structures are determined using a computational procedure in which input structures for DFT optimizations are identified as local minima in expansions of the total energy with respect to strain and soft-mode degrees of freedom. Comparison to results of previous DFT studies demonstrates the effectiveness of the computational approach in predicting ground-state phases. The calculated results show that antiferrodistortive octahedral rotations and associated A -site displacement modes act to suppress polarization and reduce the epitaxial strain energy. A projection of calculated atomic displacements in the ground-state epitaxial structures onto soft-mode eigenvectors shows that three ferroelectric and six antiferrodistortive displacement modes are dominant at all misfit strains considered, with the relative contributions from each varying systematically with the strain. Additional A -site displacement modes contribute to the atomic displacements in CaTiO3 and SrHfO3, which serve to optimize the coordination of the undersized A -site cation.

  11. Integrated fast assembly of free-standing lithium titanate/carbon nanotube/cellulose nanofiber hybrid network film as flexible paper-electrode for lithium-ion batteries.

    Science.gov (United States)

    Cao, Shaomei; Feng, Xin; Song, Yuanyuan; Xue, Xin; Liu, Hongjiang; Miao, Miao; Fang, Jianhui; Shi, Liyi

    2015-05-27

    A free-standing lithium titanate (Li4Ti5O12)/carbon nanotube/cellulose nanofiber hybrid network film is successfully assembled by using a pressure-controlled aqueous extrusion process, which is highly efficient and easily to scale up from the perspective of disposable and recyclable device production. This hybrid network film used as a lithium-ion battery (LIB) electrode has a dual-layer structure consisting of Li4Ti5O12/carbon nanotube/cellulose nanofiber composites (hereinafter referred to as LTO/CNT/CNF), and carbon nanotube/cellulose nanofiber composites (hereinafter referred to as CNT/CNF). In the heterogeneous fibrous network of the hybrid film, CNF serves simultaneously as building skeleton and a biosourced binder, which substitutes traditional toxic solvents and synthetic polymer binders. Of importance here is that the CNT/CNF layer is used as a lightweight current collector to replace traditional heavy metal foils, which therefore reduces the total mass of the electrode while keeping the same areal loading of active materials. The free-standing network film with high flexibility is easy to handle, and has extremely good conductivity, up to 15.0 S cm(-1). The flexible paper-electrode for LIBs shows very good high rate cycling performance, and the specific charge/discharge capacity values are up to 142 mAh g(-1) even at a current rate of 10 C. On the basis of the mild condition and fast assembly process, a CNF template fulfills multiple functions in the fabrication of paper-electrode for LIBs, which would offer an ever increasing potential for high energy density, low cost, and environmentally friendly flexible electronics.

  12. Thermal Transport and Phonon Hydrodynamics in Strontium Titanate

    Science.gov (United States)

    Martelli, Valentina; Jiménez, Julio Larrea; Continentino, Mucio; Baggio-Saitovitch, Elisa; Behnia, Kamran

    2018-03-01

    We present a study of thermal conductivity, κ , in undoped and doped strontium titanate in a wide temperature range (2-400 K) and detecting different regimes of heat flow. In undoped SrTiO3 , κ evolves faster than cubic with temperature below its peak and in a narrow temperature window. Such behavior, previously observed in a handful of solids, has been attributed to a Poiseuille flow of phonons, expected to arise when momentum-conserving scattering events outweigh momentum-degrading ones. The effect disappears in the presence of dopants. In SrTi1 -xNbx O3 , a significant reduction in lattice thermal conductivity starts below the temperature at which the average inter-dopant distance and the thermal wavelength of acoustic phonons become comparable. In the high-temperature regime, thermal diffusivity becomes proportional to the inverse of temperature, with a prefactor set by sound velocity and Planckian time (τp=(ℏ/kBT ) ).

  13. Composition dependence of the ferroelectric properties of lanthanum-modified bismuth titanate thin films grown by using pulsed-laser deposition

    CERN Document Server

    Bu, S D; Park, B H; Noh, T W

    2000-01-01

    Lanthanum-modified bismuth titanate, Bi sub 4 sub - sub x La sub x Ti sub 3 O sub 1 sub 2 (BLT), thin films with a La concentration of 0.25<=x<=1.00 were grown on Pt/Ti/SiO sub 2 /Si substrates by using pulsed-laser deposition. The BLT films showed well-saturated polarization-electric field curves whose remnant polarizations were 16.1 mu C/cm sup 2 , 27.8 mu C/cm sup 2 , 19.6 mu C/cm sup 2 , and 2.7 mu C/cm sup 2 , respectively, for x=0.25, 0.05, 0.75, and 1.00. The fatigue characteristics became better with increasing x up to 0.75. The Au/BLT/Pt capacitor with a La concentration of 0.50 showed an interesting dependence of the remanent polarization on the number of repetitive read/write cycles. On the other hand, the capacitor with a La concentration of 0.75 showed fatigue-free characteristics.

  14. Preparation of YBa2Cu3O7-δ epitaxial thin films by pulsed ion-beam evaporation

    International Nuclear Information System (INIS)

    Sorasit, S.; Yoshida, G.; Suzuki, T.; Suematsu, H.; Jiang, W.; Yatsui, K.

    2001-01-01

    Thin films of YBa 2 Cu 3 O 7-δ (Y-123) grown epitaxially have been successfully deposited by ion-beam evaporation (IBE). The c-axis oriented YBa 2 Cu 3 O 7-δ thin films were successfully deposited on MgO and SrTiO 3 substrates. The Y-123 thin films which were prepared on the SrTiO 3 substrates were confirmed to be epitaxially grown, by X-ray diffraction analysis. The instantaneous deposition rate of the Y-123 thin films was estimated as high as 4 mm/s. (author)

  15. Thickness dependence of electrical properties in (0 0 1) oriented lead zirconate titanate films by laser ablation

    International Nuclear Information System (INIS)

    Zhu, T.J.; Lu, L.; Lai, M.O.; Soh, A.K.

    2007-01-01

    Highly (0 0 1)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films with LaNiO 3 (LNO) bottom electrodes have been fabricated on amorphous TiN buffered Si substrates by pulsed laser deposition. The polarization-electric field (P-E) hysteresis of the deposited PZT films with different thickness ranging from 25 to 850 nm was measured. Results showed that the coercive field increases with the film thickness scaling down. No P-E loops could be obtained for the film of thickness of 25 nm. The deterioration of ferroelectric property in the thinnest film was attributed to extrinsic effect other than intrinsic size effect. Current-voltage (I-V) characteristics measurement showed the increase in leakage current of the PZT films with the decrease in the thickness of the films under the same bias voltage. At a high field regime, the leakage current of the PZT films of 25 nm thickness remained unchanged with increasing applied voltage. A totally depleted back-to-back Shottky barrier model was used to explain the effect of electrode interfaces on leakage current in the PZT films. It is believed that ferroelectric/electrode interfaces play an important role in the electrical properties of ferroelectric thin films with thickness at nanometer level

  16. Near Infrared Lateral Photovoltaic Effect in LaTiO3 Films

    Directory of Open Access Journals (Sweden)

    Wujun Jin

    2013-01-01

    Full Text Available We have reported on the lateral photovoltaic effect of LaTiO3 films epitaxially grown on (100 SrTiO3 substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3 film through SrTiO3 substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3 films give rise to a potentially photoelectronic device for near infrared position-sensitive detection.

  17. Direct evidence of superconductivity and determination of the superfluid density in buried ultrathin FeSe grown on SrTiO3

    Science.gov (United States)

    Biswas, P. K.; Salman, Z.; Song, Q.; Peng, R.; Zhang, J.; Shu, L.; Feng, D. L.; Prokscha, T.; Morenzoni, E.

    2018-05-01

    Bulk FeSe is superconducting with a critical temperature Tc≅8 K and SrTiO3 is insulating in nature, yet high-temperature superconductivity has been reported at the interface between a single-layer FeSe and SrTiO3. Angle-resolved photoemission spectroscopy and scanning tunneling microscopy measurements observe a gap opening at the Fermi surface below ≈60 K. Elucidating the microscopic properties and understanding the pairing mechanism of single-layer FeSe is of utmost importance as it is a basic building block of iron-based superconductors. Here, we use the low-energy muon spin rotation/relaxation technique to detect and quantify the supercarrier density and determine the gap symmetry in FeSe grown on SrTiO3 (100). Measurements in applied field show a temperature-dependent broadening of the field distribution below ˜60 K, reflecting the superconducting transition and formation of a vortex state. Zero-field measurements rule out the presence of magnetism of static or fluctuating origin. From the inhomogeneous field distribution, we determine an effective sheet supercarrier density ns2 D≃6 ×1014cm-2 at T →0 K, which is a factor of 4 larger than expected from ARPES measurements of the excess electron count per Fe of 1 monolayer FeSe. The temperature dependence of the superfluid density ns(T ) can be well described down to ˜10 K by simple s -wave BCS, indicating a rather clean superconducting phase with a gap of 10.2(1.1) meV. The result is a clear indication of the gradual formation of a two-dimensional vortex lattice existing over the entire large FeSe/STO interface and provides unambiguous evidence for robust superconductivity below 60 K in ultrathin FeSe.

  18. Chemical changes in titanate surfaces induced by Ar+ ion bombardment

    International Nuclear Information System (INIS)

    Gonzalez-Elipe, A.R.; Fernandez, A.; Espinos, J.P.; Munuera, G.; Sanz, J.M.

    1992-01-01

    The reduction effects and compositional changes induced by 3.5 keV Ar + bombardment of several titanates (i.e. SrTiO 3 , Al 2 TiO 5 and NiTiO 3 ) have been quantitatively investigated by XPS. In all the samples studied here the original Ti 4+ species were reduced to lower oxidation states (i.e. Ti 3+ and Ti 2+ ), although to a lesser extent than in pure TiO 2 . On the contrary, whereas Sr 2+ and Al 3+ seem to remain unaffected by Ar + bombardment, in agreement with the behaviour of the respective oxides (i.e. SrO and Al 2 O 3 ), Ni 2+ appears more easily reducible to Ni o in NiTiO 3 than in NiO. In addition, other specific differences were observed between the titanates, which reveal the existence of interesting chemical effects related to the presence of the different counter-ions in the titanates. In the case of Al 2 TiO 5 , its Ar + -induced decomposition to form TiO 2 + Al 2 O 3 could be followed by XPS. (Author)

  19. Visible-light-driven photoelectrochemical and photocatalytic performances of Cr-doped SrTiO3/TiO2 heterostructured nanotube arrays.

    Science.gov (United States)

    Jiao, Zhengbo; Chen, Tao; Xiong, Jinyan; Wang, Teng; Lu, Gongxuan; Ye, Jinhua; Bi, Yingpu

    2013-01-01

    Well-aligned TiO2 nanotube arrays have become of increasing significance because of their unique highly ordered array structure, high specific surface area, unidirectional charge transfer and transportation features. However, their poor visible light utilization as well as the high recombination rate of photoexcited electron-hole pairs greatly limited their practical applications. Herein, we demonstrate the fabrication of visible-light-responsive heterostructured Cr-doped SrTiO3/TiO2 nanotube arrays by a simple hydrothermal method, which facilitate efficient charge separation and thus improve the photoelectrochemical as well as photocatalytic performances.

  20. Suppression of the two-dimensional electron gas in LaGaO3/SrTiO3 by cation intermixing

    KAUST Repository

    Nazir, S.

    2013-12-03

    Cation intermixing at the n-type polar LaGaO 3 /SrTiO 3 (001) interface is investigated by first principles calculations. Ti"Ga, Sr"La, and SrTi"LaGa intermixing are studied in comparison to each other, with a focus on the interface stability. We demonstrate in which cases intermixing is energetically favorable as compared to a clean interface. A depopulation of the Ti 3d xy orbitals under cation intermixing is found, reflecting a complete suppression of the two-dimensional electron gas present at the clean interface.

  1. Strain-induced large spin splitting and persistent spin helix at LaAlO$_3$/SrTiO$_3$ interface

    OpenAIRE

    Yamaguchi, Naoya; Ishii, Fumiyuki

    2017-01-01

    We investigated the effect of the tensile strain on the spin splitting at the n-type interface in LaAlO$_3$/SrTiO$_3$ in terms of the spin-orbit coupling coefficient $\\alpha$ and spin texture in the momentum space using first-principles calculations. We found that the $\\alpha$ could be controlled by the tensile strain and be enhanced up to 5 times for the tensile strain of 7%, and the effect of the tensile strain leads to a persistent spin helix, which has a long spin lifetime. These results ...

  2. Disorder influence on the magnetic properties of La0.55Sr0.45MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Haberkorn, N.; Sirena, M.; Guimpel, J.; Steren, L.B.

    2004-01-01

    The structural and physical properties of La 0.55 Sr 0.45 MnO 3 /SrTiO 3 superlattices grown by magnetron sputtering are studied. Two deposition temperatures and different mismatched substrates and buffer layers were used. The structure was determined by refinement through X-ray diffraction pattern fitting. The results indicate 1 unit cell (u.c.) interdiffusion at the interfaces and a 1 u.c. layer thickness fluctuation, i.e. roughness. In-plane hysteresis loops show the expected ferromagnetic behavior, while the perpendicular-to-plane hysteresis loops show anomalies which could evidence magnetic domain size inhomogeneities and stress

  3. Large thermoelectric power factor in Pr-doped SrTiO3-δ ceramics via grain-boundary-induced mobility enhancement

    KAUST Repository

    Mehdizadeh Dehkordi, Arash

    2014-04-08

    We report a novel synthesis strategy to prepare high-performance bulk polycrystalline Pr-doped SrTiO3 ceramics. A large thermoelectric power factor of 1.3 W m-1 K-1 at 500 °C is achieved in these samples. In-depth investigations of the electronic transport and microstructure suggest that this significant improvement results from a substantial enhancement in carrier mobility originating from the formation of Pr-rich grain boundaries. This work provides new directions to higher performance oxide thermoelectrics as well as possibly other properties and applications of this broadly functional perovskite material. © 2014 American Chemical Society.

  4. Large thermoelectric power factor in Pr-doped SrTiO3-δ ceramics via grain-boundary-induced mobility enhancement

    KAUST Repository

    Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna K.; Darroudi, Taghi; Graff, Jennifer W.; Schwingenschlö gl, Udo; Alshareef, Husam N.; Tritt, Terry M.

    2014-01-01

    We report a novel synthesis strategy to prepare high-performance bulk polycrystalline Pr-doped SrTiO3 ceramics. A large thermoelectric power factor of 1.3 W m-1 K-1 at 500 °C is achieved in these samples. In-depth investigations of the electronic transport and microstructure suggest that this significant improvement results from a substantial enhancement in carrier mobility originating from the formation of Pr-rich grain boundaries. This work provides new directions to higher performance oxide thermoelectrics as well as possibly other properties and applications of this broadly functional perovskite material. © 2014 American Chemical Society.

  5. Fabrication and Evaluation of One-Axis Oriented Lead Zirconate Titanate Films Using Metal-Oxide Nanosheet Interface Layer

    Science.gov (United States)

    Minemura, Yoshiki; Nagasaka, Kohei; Kiguchi, Takanori; Konno, Toyohiko J.; Funakubo, Hiroshi; Uchida, Hiroshi

    2013-09-01

    Nanosheet Ca2Nb3O20 (ns-CN) layers with pseudo-perovskite-type crystal configuration were applied on the surface of polycrystalline metal substrates to achieve preferential crystal orientation of Pb(Zr,Ti)O3 (PZT) films for the purpose of enhanced ferroelectricity comparable to that of epitaxial thin films. PZT films with tetragonal symmetry (Zr/Ti=0.40:0.60) were fabricated by chemical solution deposition (CSD) on ns-CN-buffered Inconel 625 and SUS 316L substrates, while ns-CN was applied on the the substrates by dip-coating. The preferential crystal growth on the ns-CN layer can be achieved by favorable lattice matching between (001)/(100)PZT and (001)ns-CN planes. The degree of (001) orientation was increased for PZT films on ns-CN/Inconel 625 and ns-CN/SUS 316L substrates, whereas randomly-oriented PZT films with a lower degree of (001) orientation were grown on bare and Inconel 625 films. Enhanced remanent polarization of 60 µC/cm2 was confirmed for the PZT films on ns-CN/metal substrates, ascribed to the preferential alignment of the polar [001] axis normal to the substrate surface, although it also suffered from higher coercive field above 500 kV/cm caused by PZT/metal interfacial reaction.

  6. Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Bai, G. R.; Streiffer, S. K.; Baumann, P. K.; Auciello, O.; Ghosh, K.; Stemmer, S.; Munkholm, A.; Thompson, Carol; Rao, R. A.; Eom, C. B.

    2000-01-01

    Metal-organic chemical vapor deposition was used to prepare Pb(Mg 1/3 Nb 2/3 )O 3 (PMN) thin films on (001) SrTiO 3 and SrRuO 3 /SrTiO 3 substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO 3 substrate was found, with a (001) rocking curve width of 0.1 degree sign , and in-plane rocking-curve width of 0.8 degree sign . The root-mean-square surface roughness of a 200-nm-thick film on SrTiO 3 was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO 3 /SrTiO 3 were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm 2 . (c) 2000 American Institute of Physics

  7. PLD of X7R for thin film capacitors

    International Nuclear Information System (INIS)

    Hino, Takanori; Matsumoto, Noriyuki; Nishida, Minoru; Araki, Takao

    2008-01-01

    Thin film capacitors with a thickness of 200 nm were prepared on SrTiO 3 (1 0 0), (1 1 0) and (1 1 1) single crystal substrates at a temperature of 973 K by pulsed laser deposition (PLD) using a KrF excimer laser in an O 2 -O 3 atmosphere with a gas pressure of 1 Pa using an X7R sintered target. As a result, perovskite BaTiO 3 solid solution films were obtained. In the X7R thin films on (1 0 0) and (1 1 0) SrTiO 3 , only diffraction peaks with strong intensities from BaTiO 3 (1 0 0) and (1 1 0), respectively, were observed. X7R films on SrTiO 3 (1 1 1) were grown epitaxially oriented to the crystal plane direction of the substrate by inserting an initial homoepitaxial SrTiO 3 layer with a thickness of 4 nm. The X7R/SrTiO 3 film capacitors yielded a large volumetric efficiency of 50 μF/mm 3 and a temperature coefficient of capacitance (TCC) of -1.3% to 1.3% which satisfies the EIA standard specifications for X7R

  8. Instability of the layered orthorhombic post-perovskite phase of SrTiO3 and other candidate orthorhombic phases under pressure

    Science.gov (United States)

    Bhandari, Churna; Lambrecht, Walter R. L.

    2018-06-01

    While the tetragonal antiferro-electrically distorted (AFD) phase with space group I 4 / mcm is well known for SrTiO3 to occur below 105 K, there are also some hints in the literature of an orthorhombic phase, either at the lower temperature or at high pressure. A previously proposed orthorhombic layered structure of SrTiO3, known as the post-perovskite or CaIrO3 structure with space group Cmcm is shown to have significantly higher energy than the cubic or tetragonal phase and to have its minimum volume at larger volume than cubic perovskite. The Cmcm structure is thus ruled out. We also study an alternative Pnma phase obtained by two octahedral rotations about different axes. This phase is found to have slightly lower energy than the I 4 / mcm phase in spite of the fact that its parent, in-phase tilted P 4 / mbm phase is not found to occur. Our calculated enthalpies of formation show that the I 4 / mcm phase occurs at slightly higher volume than the cubic phase and has a negative transition pressure relative to the cubic phase, which suggests that it does not correspond to the high-pressure tetragonal phase. The enthalpy of the Pnma phase is almost indistinguishable from the I 4 / mcm phase. Alternative ferro-electric tetragonal and orthorhombic structures previously suggested in literature are discussed.

  9. Significant enhancement in thermoelectric properties of polycrystalline Pr-doped SrTiO3−δ ceramics originating from nonuniform distribution of Pr dopants

    KAUST Repository

    Dehkordi, Arash Mehdizadeh; Bhattacharya, Sriparna; He, Jian; Alshareef, Husam N.; Tritt, Terry M.

    2014-01-01

    Recently, we have reported a significant enhancement ( >70% at 500 °C) in the thermoelectric power factor (PF) of bulk polycrystalline Pr-doped SrTiO3 ceramics employing a novel synthesis strategy which led to the highest ever reported values of PF among doped polycrystalline SrTiO3. It was found that the formation of Pr-rich grain boundary regions gives rise to an enhancement in carrier mobility. In this Letter, we investigate the electronic and thermal transport in Sr1− x Pr x TiO3 ceramics in order to determine the optimum doping concentration and to evaluate the overall thermoelectric performance. Simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity in these samples resulted in more than 30% improvement in the dimensionless thermoelectric figure of merit (ZT) for the whole temperature range over all previously reported maximum values. Maximum ZT value of 0.35 was obtained at 500 °C.

  10. Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

    DEFF Research Database (Denmark)

    Niu, Wei; Gan, Yulin; Christensen, Dennis Valbjørn

    2017-01-01

    The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning...... is found to be approximately 3×1013 cm-2, much lower than that of the unpatterned sample (~1015 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ~ 7×1012 cm-2, which exhibits clear Shubnikov-de Hass...... quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devic...

  11. Significant enhancement in thermoelectric properties of polycrystalline Pr-doped SrTiO3−δ ceramics originating from nonuniform distribution of Pr dopants

    KAUST Repository

    Dehkordi, Arash Mehdizadeh

    2014-05-12

    Recently, we have reported a significant enhancement ( >70% at 500 °C) in the thermoelectric power factor (PF) of bulk polycrystalline Pr-doped SrTiO3 ceramics employing a novel synthesis strategy which led to the highest ever reported values of PF among doped polycrystalline SrTiO3. It was found that the formation of Pr-rich grain boundary regions gives rise to an enhancement in carrier mobility. In this Letter, we investigate the electronic and thermal transport in Sr1− x Pr x TiO3 ceramics in order to determine the optimum doping concentration and to evaluate the overall thermoelectric performance. Simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity in these samples resulted in more than 30% improvement in the dimensionless thermoelectric figure of merit (ZT) for the whole temperature range over all previously reported maximum values. Maximum ZT value of 0.35 was obtained at 500 °C.

  12. First-principles investigations of electronic and magnetic properties of SrTiO3 (001) surfaces with adsorbed ethanol and acetone molecules

    Science.gov (United States)

    Adeagbo, Waheed A.; Fischer, Guntram; Hergert, Wolfram

    2011-05-01

    First-principles methods based on density functional theory are used to investigate the electronic and magnetic properties of molecular interaction of the TiO2 terminated SrTiO3 (100) surface with ethanol or acetone. Both the perfect surface and the surface with an oxygen or a titanium vacancy in the top layer are considered. Ethanol and acetone are preferentially adsorbed molecularly via their respective oxygen atom on top of the Ti atom on the perfect surface. In case of an oxygen vacancy the adsorption of ethanol or acetone occurs directly on top of the vacancy and does not significantly affect the magnetism caused by the vacancy. In the case of a titanium vacancy both adsorbates occupy positions above Ti atoms. During this adsorption process the ethanol molecule dissociates into a CH3CO radical and three hydrogen atoms. The latter form hydroxide bonds with three of the four dangling oxygen bonds around the Ti vacancy and any magnetic moment induced by the Ti vacancy is annihilated. Thus the ethanol and acetone have a different impact on the surface magnetism of the SrTiO3 (100) surface.

  13. Hydrogen production over Au-loaded mesoporous-assembled SrTiO3 nanocrystal photocatalyst: Effects of molecular structure and chemical properties of hole scavengers

    International Nuclear Information System (INIS)

    Puangpetch, Tarawipa; Chavadej, Sumaeth; Sreethawong, Thammanoon

    2011-01-01

    Graphical abstract: Formic acid, which is the smallest and completely-dissociated water-soluble carboxylic acid, exhibited the highest hydrogen production enhancement ability over the 1 wt.% Au-loaded mesoporous-assembled SrTiO 3 nanocrystal photocatalyst. Display Omitted Research highlights: → The 1 wt.% Au-loaded mesoporous-assembled SrTiO 3 nanocrystal photocatalyst was synthesized. → The molecular structure and chemical properties of hole scavengers affected H 2 production rate. → Formic acid exhibited the highest photocatalytic H 2 production enhancement ability. -- Abstract: The hydrogen production via the photocatalytic water splitting under UV irradiation using different compounds as hole scavengers (including methanol, formic acid, acetic acid, propanoic acid, hydrochloric acid, and sulfuric acid) under a low concentration range ( 3 nanocrystal photocatalyst. The results indicated that the hydrogen production efficiency greatly depended on the molecular structure, chemical properties, and concentration of the hole scavengers. Formic acid, which is the smallest and completely-dissociated water-soluble carboxylic acid, exhibited the highest hydrogen production enhancement ability. The 2.5 vol.% aqueous formic acid solution system provided the highest photocatalytic hydrogen production rate.

  14. Quantification of flexoelectricity in PbTiO3/SrTiO3 superlattice polar vortices using machine learning and phase-field modeling.

    Science.gov (United States)

    Li, Q; Nelson, C T; Hsu, S-L; Damodaran, A R; Li, L-L; Yadav, A K; McCarter, M; Martin, L W; Ramesh, R; Kalinin, S V

    2017-11-13

    Flexoelectricity refers to electric polarization generated by heterogeneous mechanical strains, namely strain gradients, in materials of arbitrary crystal symmetries. Despite more than 50 years of work on this effect, an accurate identification of its coupling strength remains an experimental challenge for most materials, which impedes its wide recognition. Here, we show the presence of flexoelectricity in the recently discovered polar vortices in PbTiO 3 /SrTiO 3 superlattices based on a combination of machine-learning analysis of the atomic-scale electron microscopy imaging data and phenomenological phase-field modeling. By scrutinizing the influence of flexocoupling on the global vortex structure, we match theory and experiment using computer vision methodologies to determine the flexoelectric coefficients for PbTiO 3 and SrTiO 3 . Our findings highlight the inherent, nontrivial role of flexoelectricity in the generation of emergent complex polarization morphologies and demonstrate a viable approach to delineating this effect, conducive to the deeper exploration of both topics.

  15. Interfacial B-site atomic configuration in polar (111) and non-polar (001) SrIrO3/SrTiO3 heterostructures

    Science.gov (United States)

    Anderson, T. J.; Zhou, H.; Xie, L.; Podkaminer, J. P.; Patzner, J. J.; Ryu, S.; Pan, X. Q.; Eom, C. B.

    2017-09-01

    The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic directions that feature inevitably complex surface reconstructions. Here, we present the B-site interfacial structure in polar (111) and non-polar (001) SrIrO3/SrTiO3 interfaces. The heterostructures were examined using scanning transmission electron microscopy and synchrotron-based coherent Bragg rod analysis. Our results reveal the preference of B-site intermixing across the (111) interface due to the polarity-compensated SrTiO3 substrate surface prior to growth. By comparison, the intermixing at the non-polar (001) interface is negligible. This finding suggests that the intermixing may be necessary to mitigate epitaxy along heavily reconstructed and non-stoichiometric (111) perovskite surfaces. Furthermore, this preferential B-site configuration could allow the geometric design of the interfacial perovskite structure and chemistry to selectively engineer the correlated electronic states of the B-site d-orbital.

  16. Physical characteristics and magnetic properties of BaFe12O19/SrTiO3 based composites derived from mechanical alloying

    International Nuclear Information System (INIS)

    Widodo, Rahmat Doni; Manaf, Azwar

    2016-01-01

    A composite system BaFe 12 O 19 /SrTiO 3 with ferrimagnetic BaFe 12 O 19 phase (BHF) and ferroelectric SrTiO 3 phase (STO) have been prepared by mechanical alloying and subsequent heat treatment. The composite powders were studied by Particle Size Analyze, X-ray diffraction and magnetic measurement. It was found that the particle size of composite powders initially increased due to laminated layers formation of a composite and then decreased to an asymptotic value of ∼8 µm as the milling time extended even to a relatively longer time. However, based on results of line broadening analysis the mean grain size of the particles was found in the nanometer scale. We thus believed that mechanical blending and milling of mixture components for the composite materials has promoted heterogeneous nucleation and only after successive sintering at 1100°C the milled powder transformed into particles of nanograin. In this report, microstructure as well as magnetic properties for the composite is also briefly discussed.

  17. Interfacial B-site atomic configuration in polar (111 and non-polar (001 SrIrO3/SrTiO3 heterostructures

    Directory of Open Access Journals (Sweden)

    T. J. Anderson

    2017-09-01

    Full Text Available The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic directions that feature inevitably complex surface reconstructions. Here, we present the B-site interfacial structure in polar (111 and non-polar (001 SrIrO3/SrTiO3 interfaces. The heterostructures were examined using scanning transmission electron microscopy and synchrotron-based coherent Bragg rod analysis. Our results reveal the preference of B-site intermixing across the (111 interface due to the polarity-compensated SrTiO3 substrate surface prior to growth. By comparison, the intermixing at the non-polar (001 interface is negligible. This finding suggests that the intermixing may be necessary to mitigate epitaxy along heavily reconstructed and non-stoichiometric (111 perovskite surfaces. Furthermore, this preferential B-site configuration could allow the geometric design of the interfacial perovskite structure and chemistry to selectively engineer the correlated electronic states of the B-site d-orbital.

  18. Tunable dielectric properties of Barium Magnesium Niobate (BMN) doped Barium Strontium Titanate (BST) thin films by magnetron sputtering

    Science.gov (United States)

    Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

    2013-03-01

    We report on the tunable dielectric properties of Mg and Nb co-doped Ba0.45Sr0.55TiO3 (BST) thin film prepared by the magnetron sputtering using BST target (pure and doped with BaMg0.33Nb0.67O3 (BMN)) on Pt/TiO2/SiO2/Al2O3 4'' wafers at 700 °C under oxygen atmosphere. The electrical measurements are conducted on 2432 metal-ferroelectric-metal capacitors using Pt as the top and bottom electrode. The crystalline structure, microstructure, and surface morphology of the films are analyzed and correlated to the films dielectric properties. The BMN doped and undoped BST films have shown tunabilities of 48% and 52%; and leakage current densities of 2.2x10-6 A/cm2 and 3.7x10-5 A/cm2, respectively at 0.5 MV/cm bias field. The results indicate that the BMN doped film exhibits a lower leakage current with no significant decrease in tunability. Due to similar electronegativity and ionic radii, it was suggested that both Mg2+ (accepter-type) and Nb5+ (donor-type) dopants substitutTi4+ ion in BST. The improvement in the film dielectric losses and leakage current with insignificant loss of tunability is attributed to the adversary effects of Mg2+ and Nb5+ in BST.

  19. Printed Barium Strontium Titanate capacitors on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sette, Daniele [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg); Kovacova, Veronika [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Defay, Emmanuel, E-mail: emmanuel.defay@list.lu [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg)

    2015-08-31

    In this paper, we show that Barium Strontium Titanate (BST) films can be prepared by inkjet printing of sol–gel precursors on platinized silicon substrate. Moreover, a functional variable capacitor working in the GHz range has been made without any lithography or etching steps. Finally, this technology requires 40 times less precursors than the standard sol–gel spin-coating technique. - Highlights: • Inkjet printing of Barium Strontium Titanate films • Deposition on silicon substrate • Inkjet printed silver top electrode • First ever BST films thinner than 1 μm RF functional variable capacitor that has required no lithography.

  20. YBa2Cu3O7 films prepared by aerosol MOCVD

    International Nuclear Information System (INIS)

    Weiss, F.; Froehlich, K.; Haase, R.; Labeau, M.; Selbmann, D.; Senateur, J.P.; Thomas, O.

    1993-01-01

    In the present study we report on properties of YBa 2 Cu 3 O 7 films prepared by aerosol MOCVD. We give a short description of the process and we focus on the superconducting and related properties of the films deposited on SrTiO 3 , LaAlO 3 and NdGaO 3 single crystalline substrates. (orig.)

  1. Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

    Science.gov (United States)

    Panda, B.; Dhar, A.; Nigam, G. D.; Bhattacharya, D.; Ray, S. K.

    1998-01-01

    Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon and Si/SiO2/SiN/Pt substrates. The analysis of plasma discharge has been carried out using the Langmuir probe technique. Both the pressure and power have been found to influence the ion density and self-bias of the target. Introduction of oxygen into the discharge effectively decreases the ion density. The structural and electrical properties have been investigated using x-ray diffraction, atomic force microscopy of deposited films and capacitance-voltage, conductance-voltage, and current density-electric field characteristics of fabricated capacitors. The growth and orientation of the films have been found to depend upon the type of substrates and deposition temperatures. The texture in the film is promoted at a pressure 0.25 Torr with a moderately high value of ion density and low ion bombardment energy. Films deposited on Si/SiO2/SiN/Pt substrate have shown higher dielectric constant (191) and lower leakage current density (2.8×10-6 A/cm2 at 100 kV/cm) compared to that on silicon.

  2. Zirconium titanate thin film prepared by surface sol-gel process and effects of thickness on dielectric property

    CERN Document Server

    Kim, C H

    2002-01-01

    Single phase of multicomponent oxide ZrTiO sub 4 film could be prepared through surface sol-gel route simply by coating the mixture of 100mM zirconium butoxide and titanium butoxide on Pt/Ti/SiO sub 2 /Si(100) substrate, following pyrolysis at 450 .deg. C, and annealing it at 770 .deg. C. The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V). The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, t sub i , was dependent on the frequency. It reached a saturated t sub i value, 6.9 A, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO sub 4 pellet-shaped material was 3...

  3. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio

    2017-08-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\\\text{LaMnO}_3)_{6-x}\\\\vert(\\\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  4. Processing of Al2O3/SrTiO3/PDMS Composites With Low Dielectric Loss

    Science.gov (United States)

    Yao, J. L.; Guo, M. J.; Qi, Y. B.; Zhu, H. X.; Yi, R. Y.; Gao, L.

    2018-05-01

    Polydimethylsiloxane (PDMS) is widely used in the electrical and electronic industries due to its excellent electrical insulation and biocompatible characteristics. However, the dielectric constant of pure PDMS is very low which restricts its applications. Herein, we report a series of PDMS/Al2O3/strontium titanate (ST) composites with high dielectric constant and low loss prepared by a simple experimental method. The composites exhibit high dielectric constant (relative dielectric constant is 4) after the composites are coated with insulated Al2O3 particles, and the dielectric constant gets further improved for composites with ST particles (dielectric constant reaches 15.5); a lower dielectric loss (tanδ= 0.05) is also found at the same time which makes co-filler composites suitable for electrical insulation products, and makes the experimental method more interesting in modern teaching.

  5. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio; Tahini, Hassan Ali; Singh, Nirpendra; Schwingenschlö gl, Udo

    2017-01-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\text{LaMnO}_3)_{6-x}\\vert(\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  6. Application of La-Doped SrTiO3 in Advanced Metal-Supported Solid Oxide Fuel Cells

    Directory of Open Access Journals (Sweden)

    Sabrina Presto

    2018-03-01

    Full Text Available Composite materials frequently allow the drawbacks of single components to be overcome thanks to a synergistic combination of material- and structure-specific features, leading to enhanced and also new properties. This is the case of a metallic-ceramic composite, a nickel-chromium-aluminum (NiCrAl foam impregnated with La-doped Strontium Titanate (LST. This particular cermet has very interesting properties that can be used in different fields of application, namely: mechanical robustness provided by the metal foam; and chemical stability in harsh conditions of temperature and atmosphere by promotion of a thin protective layer of alumina (Al2O3; high electronic conductivity given by a percolating ceramic conducting phase, i.e., La-doped Strontium Titanate. In this paper, its application as a current collector in a metal-supported Solid Oxide Fuel Cells (SOFC was studied. Firstly, the electronic properties of different compositions, stoichiometric and under stoichiometric, of LST were analyzed to choose the best one in terms of conductivity and phase purity. Then, LST chemical stability was studied in the presence of Al2O3 at different temperatures, gas compositions and aging times. Finally, stability and conductivity of LST-impregnated NiCrAl foam composite materials were measured, and LST was found to be fully compatible with the NiCrAl foam, as no reactions were detected in oxidizing and reducing atmosphere after up to 300 h operation at 750 °C and 900 °C between the Al2O3 layer and LST. Results showed that the composite is suitable as a current collector in innovative designs of metal-supported SOFC, like the Evolve cell, in which the metallic part is supposed not only to provide the structural stability to the cell, but also to play the role of current collector due to the impregnation of ceramic material.

  7. Density functional theory study of oxygen and water adsorption on SrTiO3(001)

    International Nuclear Information System (INIS)

    Guhl, Hannes

    2010-01-01

    Strontium titanate is an extensively studied material with a wide range of application, for instance in photo-catalysis and most importantly, it is used as a substrate in growth of functional oxides. The surface chemistry is crucial and hence understanding the surface structure on atomic scale is essential for gaining insight into the fundamental processes in the aforementioned applications. Moreover, there exist a lot of evidence that this surface chemistry might be controlled to considerably by extrinsic species, such as residual hydrogen and water. Investigating the properties of water and oxygen on the strontium titanate surface is certainly a natural starting point for a theoretical study based on density functional theory, because these species are practically present on the surface on a wide range of experimental conditions and they are computationally feasible. For the oxygen and water adsorption the binding energy is controlled by long-range surface relaxations leading to an effective repulsion of the adsorbed specimen. The isolated oxygen ad-atom forms a covalently bonded ''quasi-peroxide anion'' in combination with a lattice oxygen atom. Contrariwise, in all investigated configurations containing water molecules and hydroxyl groups, the respective oxygen atoms assumed positions close to the oxygen sites of the continued perovskite lattice of the substrate. Most remarkably, on the strontium oxide termination, the water molecules adsorbs and dissociates effortlessly leading to the formation of a pair of hydroxyl groups. For the titanium dioxide termination, a coverage dependent adsorption mode is observed. Densely packings stabilize water molecules, whereas at lower coverage and finite temperatures the formation of hydroxyl groups is found. The energetics responsible for this behavior is consistent with recent experiments by Iwahori and coworkers. (orig.)

  8. Down-conversion luminescence and its temperature-sensing properties from Er3+-doped sodium bismuth titanate ferroelectric thin films

    Science.gov (United States)

    Wang, Shanshan; Zheng, Shanshan; Zhou, Hong; Pan, Anlian; Wu, Guangheng; Liu, Jun-ming

    2015-11-01

    Here, we demonstrate outstanding temperature-sensing properties from Na0.5Bi0.49Er0.01TiO3 (NBT:Er) thin films. The perovskite phase for them is stable in the temperature range from 80 to 440 K. Interestingly, the Er doping enhances the ferroelectric polarization and introduces local dipolar, which are positive for temperature sensing. Pumped by a 488-nm laser, the NBT:Er thin films show strong green luminescence with two bands around 525 and 548 nm. The intensity ratio I 525/ I 548 can be used for temperature sensing, and the maximum sensitivity is about 2.3 × 10-3 K-1, higher than that from Er-doped silicon oxide. These suggest NBT:Er thin film is a promising candidate for temperature sensor.

  9. Lattice Dynamical Properties of Ferroelectric Thin Films at the Nanoscale

    Energy Technology Data Exchange (ETDEWEB)

    Xi, Xiaoxing [Temple University

    2014-01-13

    In this project, we have successfully demonstrated atomic layer-by-layer growth by laser MBE from separate targets by depositing SrTiO3 films from SrO and TiO2 targets. The RHEED intensity oscillation was used to monitor and control the growth of each SrO and TiO2 layer. We have shown that by using separate oxide targets, laser MBE can achieve the same level of stoichiometry control as the reactive MBE. We have also studied strain relaxation in LaAlO3 films and its effect on the 2D electron gas at LaAlO3/SrTiO3 interface. We found that there are two layers of different in-plane lattice constants in the LaAlO3 films, one next to the SrTiO3 substrate nearly coherently strained, while the top part relaxed as the film thickness increases above 20 unit cells. This strain relaxation significantly affect the transport properties of the LaAlO3/SrTiO3 interface.

  10. Thermal conductivity reduction in oxygen-deficient strontium titanates

    NARCIS (Netherlands)

    Yu, Choongho; Scullin, Matthew L.; Huijben, Mark; Ramesh, Ramamoorthy; Majumdar, Arun

    2008-01-01

    We report significant thermal conductivity reduction in oxygen-deficient lanthanum-doped strontium titanate (Sr1−xLaxTiO3−δ) films as compared to unreduced strontium titanates. Our experimental results suggest that the oxygen vacancies could have played an important role in the reduction. This could

  11. ZnO Nanorods on a LaAlO 3 -SrTiO 3 Interface: Hybrid 1D-2D Diodes with Engineered Electronic Properties

    KAUST Repository

    Bera, Ashok

    2015-12-28

    Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanorods and 2D metallic LaAlO3-SrTiO3 interface. Tunable insulator-to-metal transitions, absent in the individual components, are observed as a result of the competing temperature-dependent conduction mechanisms. Detailed transport analysis reveals direct tunneling at low bias, Fowler-Nordheim tunneling at high forward bias, and Zener breakdown at high reverse bias. Our results highlight the rich electronic properties of such artificial diodes with hybrid dimensionalities, and the design principle may be generalized to other nanomaterials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Enhancing photocatalysis in SrTiO3 by using Ag nanoparticles: A two-step excitation model for surface plasmon-enhanced photocatalysis

    International Nuclear Information System (INIS)

    Ma, Lei; Sun, Tao; Cai, Hua; Zhou, Zhi-Quan; Sun, Jian; Lu, Ming

    2015-01-01

    Surface plasmon (SP)-enhanced ultraviolet and visible photocatalytic activities of SrTiO 3 (STO) are observed after incorporating Ag nanoparticles (Ag-NPs) on STO surfaces. A two-step excitation model is proposed to explain the SP-enhanced photocatalysis. The point of the model is that an electron at the valence band of STO is first excited onto the Fermi level of Ag-NP by the SP field generated on the Ag-NP, and then injected into the conduction band of STO from the SP band, leaving a hole at the valence band of STO. A full redox catalytic reaction at the surface of STO is then available. For Ag-NP incorporated STO, up-converted and inter-band photoluminescence emissions of STO are observed, and nonlinear evolutions of photocatalytic activity with illumination light powers are found. Furthermore, near infrared photocatalysis is detected. These results support the proposed model

  13. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio

    2013-07-17

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid functional to determine the electronic structure. This approach offers the distinct advantage of accessing both the metallic and insulating multilayers on a parameter-free equal footing. As compared to calculations based on semilocal GGA functionals, our hybrid functional calculations lead to a considerably increased band gap for the insulating systems. The details of the electronic structure show substantial deviations from those obtained by GGA calculations. This casts severe doubts on all previous results based on semilocal functionals. In particular, corrections using rigid band shifts (“scissors operator”) cannot lead to valid results.

  14. Enhancing mid-infrared spectral response at the LaAlO3/SrTiO3 interface by magnetic field

    International Nuclear Information System (INIS)

    Feng, Xin; Zhao, Kun; Xi, Jian-Feng; Xiang, Wen-Feng; Lu, Zhi-Qing; Sun, Qi; Wu, Shi-Xiang; Ni, Hao

    2014-01-01

    Many unexpected properties have been found in the LaAlO 3 /SrTiO 3 heterostructure, but the interaction of the many ground states at its interface remains unclear. Here, we demonstrate an optical property of this n-type heterostructure where the mid-infrared spectral responsivity at the interface is enhanced by an external magnetic field. The field intensity ranged from 0.8 to 6 kOe at a low temperature (19 K) as measured with our spectral response measurement system. Two spectral peaks related to the spin-orbit coupling effect were also observed at wavelengths 2400 nm and 3700 nm. The intriguing phenomena relate to changes in the crystallographic structure and subband structure at the interface

  15. ZnO Nanorods on a LaAlO 3 -SrTiO 3 Interface: Hybrid 1D-2D Diodes with Engineered Electronic Properties

    KAUST Repository

    Bera, Ashok; Lin, Weinan; Yao, Yingbang; Ding, Junfeng; Lourembam, James; Wu, Tao

    2015-01-01

    Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanorods and 2D metallic LaAlO3-SrTiO3 interface. Tunable insulator-to-metal transitions, absent in the individual components, are observed as a result of the competing temperature-dependent conduction mechanisms. Detailed transport analysis reveals direct tunneling at low bias, Fowler-Nordheim tunneling at high forward bias, and Zener breakdown at high reverse bias. Our results highlight the rich electronic properties of such artificial diodes with hybrid dimensionalities, and the design principle may be generalized to other nanomaterials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Single-crystal SrTiO3 fiber grown by laser heated pedestal growth method: influence of ceramic feed rod preparation in fiber quality

    Directory of Open Access Journals (Sweden)

    D. Reyes Ardila

    1998-10-01

    Full Text Available The rapidly spreading use of optical fiber as a transmission medium has created an interest in fiber-compatible optical devices and methods for growing them, such as the Laser Heated Pedestal Growth (LHPG. This paper reports on the influence of the ceramic feed rod treatment on fiber quality and optimization of ceramic pedestal processing that allows improvements to be made on the final quality in a simple manner. Using the LHPG technique, transparent crack-free colorless single crystal fibers of SrTiO3 (0.50 mm in diameter and 30-40 mm in length were grown directly from green-body feed rods, without using external oxygen atmosphere.

  17. Spatially modulated magnetic structure of EuS due to the tetragonal domain structure of SrTiO3 APS

    CERN Document Server

    Rosenberg, Aaron J.; Kirtley, John R.; Gedik, Nuh; Moodera, Jagadeesh S.; Moler, Kathryn A.

    2017-12-15

    The combination of ferromagnets with topological superconductors or insulators allows for new phases of matter that support excitations such as chiral edge modes and Majorana fermions. EuS, a wide-bandgap ferromagnetic insulator with a Curie temperature around 16 K, and SrTiO3 (STO), an important substrate for engineering heterostructures, may support these phases. We present scanning superconducting quantum interference device measurements of EuS grown epitaxially on STO that reveal micron-scale variations in ferromagnetism and paramagnetism. These variations are oriented along the STO crystal axes and only change their configuration upon thermal cycling above the STO cubic-to-tetragonal structural transition temperature at 105 K, indicating that the observed magnetic features are due to coupling between EuS and the STO tetragonal structure. We speculate that the STO tetragonal distortions may strain the EuS, altering the magnetic anisotropy on a micron scale. This result demonstrates that local variation in...

  18. O deficient LaAlO3/SrTiO3(110) and (001) superlattices under hydrostatic pressure: a comparative first principles study

    KAUST Repository

    Albar, Arwa; Schwingenschlö gl, Udo

    2017-01-01

    We compare the electronic properties of O deficient LaAlO3/SrTiO3 superlattices oriented along the (001) and (110) directions, taking into account the effect of hydrostatic compression and tension. Interfacial O vacancies turn out to be less likely in the case of the (110) orientation, with compression (tension) reducing (enhancing) the energy cost for both orientations. The presence of O vacancies results in the formation of a two-dimensional electron gas, for which we observe a distinct spatial pattern of carrier density that depends strongly on the amount of applied pressure. We clarify the interrelation between structural features and the properties of this electron gas (confinement, carrier density, and mobility).

  19. Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Wang, L.M.; Guo, C.-C.

    2005-01-01

    The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

  20. Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at the LaAlO3/SrTiO3 Interface.

    Science.gov (United States)

    Diez, M; Monteiro, A M R V L; Mattoni, G; Cobanera, E; Hyart, T; Mulazimoglu, E; Bovenzi, N; Beenakker, C W J; Caviglia, A D

    2015-07-03

    The LaAlO3/SrTiO3 interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20 K range--indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence.

  1. O deficient LaAlO3/SrTiO3(110) and (001) superlattices under hydrostatic pressure: a comparative first principles study

    KAUST Repository

    Albar, Arwa

    2017-03-17

    We compare the electronic properties of O deficient LaAlO3/SrTiO3 superlattices oriented along the (001) and (110) directions, taking into account the effect of hydrostatic compression and tension. Interfacial O vacancies turn out to be less likely in the case of the (110) orientation, with compression (tension) reducing (enhancing) the energy cost for both orientations. The presence of O vacancies results in the formation of a two-dimensional electron gas, for which we observe a distinct spatial pattern of carrier density that depends strongly on the amount of applied pressure. We clarify the interrelation between structural features and the properties of this electron gas (confinement, carrier density, and mobility).

  2. Sintering, microstructure and electrical conductivity of gadolinia-doped ceria with SrO, TiO2 and SrTiO3

    International Nuclear Information System (INIS)

    Dias, Maria Cely Freitas

    2013-01-01

    Ceria containing trivalent rare-earths is a solid electrolyte with higher ionic conductivity than the standard yttria fully-stabilized zirconia ionic conductor. This property turns these ceria-based ionic conductors promising materials for application in solid oxide fuel cells operating at intermediate temperatures (500-700 deg C). One of the most utilized approaches to optimize the electrical conductivity and other properties of these materials is the introduction of a second additive. In this work, ceria-20 mol% gadolinia with additions of 1, 2.5 and 5 mol% of SrO, TiO 2 and SrTiO 3 as co-additives were prepared by solid state reaction. The main purpose was to investigate the effects of the co-additives on densification, microstructure and electrical conductivity of the solid electrolyte. Sintered pellets were characterized by apparent density, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and electrical conductivity by impedance spectroscopy. The additives were found to exert different influences in all studied properties. The way they influence the solid electrolyte properties depends on the type and content of the additive. SrO addition to doped ceria improves the intergranular conductivity, but decreases the apparent density of the pellets. Increase of densification was obtained with TiO 2 addition. This additive promotes increase of the blocking of charge carriers at the grain boundaries due to solute exsolution and formation of the pyrochlore Gd 2 Ti 2 O 7 phase at grain boundaries for contents in excess of the solubility limit. No influence on densification was found for SrTiO 3 additions. (author)

  3. Photolithographic patterning of nanocrystalline europium-titanate Eu2Ti2O7 thin films on silicon substrates

    Czech Academy of Sciences Publication Activity Database

    Mrázek, Jan; Boháček, Jan; Vytykáčová, Soňa; Buršík, Jiří; Puchý, V.; Robert, D.; Kašík, Ivan

    2017-01-01

    Roč. 209, December (2017), s. 216-219 ISSN 0167-577X Grant - others:AV ČR(CZ) SAV-16-17 Program:Bilaterální spolupráce Institutional support: RVO:67985882 ; RVO:68081723 Keywords : Magnetic materials * Rare earth compounds * Thin films * Photolithography Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (UFM-A) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Condensed matter physics (including formerly solid state physics, supercond.) (UFM-A) Impact factor: 2.572, year: 2016

  4. Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO3 Thin Films

    OpenAIRE

    Wei XK; Vaideeswaran K; Sandu CS; Jia CL; Setter N

    2015-01-01

    Polar translational boundaries (PTBs) are preferentially created in antiferroelectric PbZrO3 films through interfacial engineering. Probe corrected scanning transmission electron microscopy studies reveal that RIII 1 and RI 1 type PTBs are favorably created in PbZrO3/BaZrO3/SrTiO3 and PbZrO3/SrTiO3 films respectively. The relationship between interfacial strain and the internal strain of boundaries is the driving force for the selective formation of PTBs.

  5. Titan Aerial Daughtercraft

    Data.gov (United States)

    National Aeronautics and Space Administration — Saturn's giant moon Titan has become one of the most fascinating bodies in the Solar System. Titan is the richest laboratory in the solar system for studying...

  6. Titanic: A Statistical Exploration.

    Science.gov (United States)

    Takis, Sandra L.

    1999-01-01

    Uses the available data about the Titanic's passengers to interest students in exploring categorical data and the chi-square distribution. Describes activities incorporated into a statistics class and gives additional resources for collecting information about the Titanic. (ASK)

  7. Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices.

    Science.gov (United States)

    Wan, Tao; Qu, Bo; Du, Haiwei; Lin, Xi; Lin, Qianru; Wang, Da-Wei; Cazorla, Claudio; Li, Sean; Liu, Sidong; Chu, Dewei

    2018-02-15

    Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics. Realizing the transition from digital to analog switching in the same device is essential for understanding and controlling the performance of the devices with various switching mechanisms. Here, we investigate the resistive switching in a device made with strontium titanate (SrTiO 3 ) nanoparticles using X-ray diffractometry, scanning electron microscopy, Raman spectroscopy, and direct electrical measurements. It is found that the well-known rupture/formation of Ag filaments is responsible for the digital switching in the device with Ag as the top electrode. To modulate the switching performance, we insert a reduced graphene oxide layer between SrTiO 3 and the bottom FTO electrode owing to its good barrier property for the diffusion of Ag ions and high out-of-plane resistance. In this case, resistive switching is changed from digital to analog as determined by the modulation of interfacial resistance under applied voltage. Based on that controllable resistance, potentiation and depression behaviours are implemented as well. This study opens up new ways for the design of multifunctional devices which are promising for memory and neuromorphic computing applications. Copyright © 2017 Elsevier Inc. All rights reserved.

  8. Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Minh D. Nguyen

    2016-08-01

    Full Text Available Pb0.9La0.1(Zr0.52Ti0.48O3 (PLZT relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco of 13.7 J/cm3 together with a high energy efficiency (η of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48O3 ferroelectric thin films (Ureco = 9.2 J/cm3 and η = 56.4% which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

  9. Análise dos personagens no roteiro do Filme Titanic (1997 - paralelo do real com a ficção

    Directory of Open Access Journals (Sweden)

    Karina Pereira Ferreira

    2012-07-01

    Full Text Available The purpose of this paper is to analyze how the actions of real characters of the tragedy of the Titanic had changed their stories to fit the proposal of the screenplay director James Cameron, and how the fictional characters drove the plot completely and ideal for the success of screenplay. Cameron made changes in history that made the difference between the Titanic to be just another movie about the tragedy, to become the biggest movie of recent times, with a captivating story that holds people's attention today.

  10. Análise dos personagens no roteiro do Filme Titanic (1997) - paralelo do real com a ficção

    OpenAIRE

    Karina Pereira Ferreira

    2012-01-01

    The purpose of this paper is to analyze how the actions of real characters of the tragedy of the Titanic had changed their stories to fit the proposal of the screenplay director James Cameron, and how the fictional characters drove the plot completely and ideal for the success of screenplay. Cameron made changes in history that made the difference between the Titanic to be just another movie about the tragedy, to become the biggest movie of recent times, with a captivating story that holds pe...

  11. Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2012-01-01

    The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO3 (SLTO) thin films epitaxially grown on LaAlO3 〈100〉 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies

  12. Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, T.Y.

    2009-01-01

    The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in bo...

  13. Electrical characterization of strontium titanate borosilicate glass ceramics system with bismuth oxide addition using impedance spectroscopy

    International Nuclear Information System (INIS)

    Thakur, O.P.; Kumar, Devendra; Parkash, Om; Pandey, Lakshman

    2003-01-01

    The ac electrical data, measured in the frequency range 0.1 kHz-1 MHz, were used to study the electrical response of strontium titanate borosilicate glass ceramic system with bismuth oxide addition. Complex plane plots from these electrical data for various glass ceramic samples reveal contributions from simultaneously operating polarization mechanisms to overall dielectric behavior. The complex modulus (M * ) representation of electrical data for various glass ceramic samples were found to be more informative. Equivalent circuit models, which represent the electrical behavior of glass ceramic samples, were determined using complex non-linear least square (CNLS) fitting. An attempt has been made to understand the dielectric behavior of various glass ceramics in terms of contributions arising from different polarization processes occurring at glassy matrix, crystalline phases, glass to crystal interface region and blocking electrodes. Glass ceramics containing SrTiO 3 and TiO 2 (rutile) phases show thermally stable dielectric behavior

  14. Absence of confinement in (SrTiO3)/( SrTi0.8Nb0.2O3 ) superlattices

    Science.gov (United States)

    Bouzerar, G.; Thébaud, S.; Bouzerar, R.; Pailhès, S.; Adessi, Ch.

    2018-03-01

    The reduction of dimensionality is considered an efficient pathway to boost the performances of thermoelectric materials. Quantum confinement of the carriers is expected to induce large Seebeck coefficients (S ) and it also suppresses the thermal conductivity by increasing the phonon scattering processes. However, quantum confinement in superlattices is not always easy to achieve and needs to be carefully validated. In the past decade, large values of S have been measured in (SrTiO3)/(SrTi0.8Nb0.2O3 ) superlattices [H. Ohta et al., Nat. Mater. 6, 129 (2007), 10.1038/nmat1821; Y. Mune et al., Appl. Phys. Lett. 91, 192105 (2007), 10.1063/1.2809364]. In the δ -doped compound, the reported S was almost six times larger than that of the bulk material. This huge increase has been attributed to the two-dimensional carrier confinement in the doped regions. Here, we demonstrate that the experimental data are well explained quantitatively assuming delocalized electrons in both in-plane and growth directions. Moreover, we rule out the confined electron hypothesis whose signature would be the suppression of the Seebeck coefficient. This strongly suggests that the presupposed confinement picture in these superlattices is unlikely.

  15. Electric and magnetic properties of a CoFe2O4/PZT bilayer grown on (100)SrTiO3 by using PLD

    International Nuclear Information System (INIS)

    Zhang, X. D.; Dho, J. H.

    2010-01-01

    We have investigated the electric and the magnetic properties of a ferrimagnetic and ferroelectric bilayer CoFe 2 O 4 (CFO)/PbZr 0.2 Ti 0.8 O 3 (PZT) grown on a (100)SrTiO 3 (STO) substrate by using pulsed laser deposition. PZT (100 nm) and CFO (70 nm) layers were sequentially deposited on the (100)STO substrate with a bottom electrode LaNiO 3 (50 nm) layer at 600 - 650 .deg. C. X-ray diffraction for the PZT layer exhibited both (200) and (002) peaks, which are due to the c- and the a-domains, and a decrease of tetragonality after CFO deposition. The electric properties of the CFO/PZT bilayer were characterized by using P-V loop, C-f, and C-V measurements. The remnant polarization and coercivity were slightly decreased after the top-layer CFO deposition while fatigue behavior was distinctively improved. The M-H loop measurement confirmed that the CFO layer possessed a typical ferrimagnetic property at room temperature.

  16. Formation of a conducting LaAlO3/SrTiO3 interface studied by low-energy electron reflection during growth

    Science.gov (United States)

    van der Torren, A. J. H.; Liao, Z.; Xu, C.; Gauquelin, N.; Yin, C.; Aarts, J.; van der Molen, S. J.

    2017-12-01

    The two-dimensional electron gas occurring between the band insulators SrTiO3 and LaAlO3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density and due to ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO3 layer at the growth temperature (around 800°C) in oxygen (pressure around 5 ×10-5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO2-rich surface and a conducting interface or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.

  17. Probing charge transfer during metal-insulator transitions in graphene-LaAlO3/SrTiO3 systems

    Science.gov (United States)

    Aliaj, I.; Sambri, A.; Miseikis, V.; Stornaiuolo, D.; di Gennaro, E.; Coletti, C.; Pellegrini, V.; Miletto Granozio, F.; Roddaro, S.

    2018-06-01

    Two-dimensional electron systems (2DESs) at the interface between LaAlO3 (LAO) and SrTiO3 (STO) perovskite oxides display a wide class of tunable phenomena ranging from superconductivity to metal-insulator transitions. Most of these effects are strongly sensitive to surface physics and often involve charge transfer mechanisms, which are, however, hard to detect. In this work, we realize hybrid field-effect devices where graphene is used to modulate the transport properties of the LAO/STO 2DES. Different from a conventional gate, graphene is semimetallic and allows us to probe charge transfer with the oxide structure underneath the field-effect electrode. In LAO/STO samples with a low initial carrier density, graphene-covered regions turn insulating when the temperature is lowered to 3 K, but conduction can be restored in the oxide structure by increasing the temperature or by field effect. The evolution of graphene's electron density is found to be inconsistent with a depletion of LAO/STO, but it rather points to a localization of interfacial carriers in the oxide structure.

  18. Raman and fluorescence contributions to the resonant inelastic soft x-ray scattering on LaAlO3/SrTiO3 heterostructures

    Science.gov (United States)

    Pfaff, F.; Fujiwara, H.; Berner, G.; Yamasaki, A.; Niwa, H.; Kiuchi, H.; Gloskovskii, A.; Drube, W.; Gabel, J.; Kirilmaz, O.; Sekiyama, A.; Miyawaki, J.; Harada, Y.; Suga, S.; Sing, M.; Claessen, R.

    2018-01-01

    We present a detailed study of the Ti 3 d carriers at the interface of LaAlO3/SrTiO3 heterostructures by high-resolution resonant inelastic soft x-ray scattering (RIXS), with special focus on the roles of overlayer thickness and oxygen vacancies. Our measurements show the existence of interfacial Ti 3 d electrons already below the critical thickness for conductivity. The (total) interface charge carrier density increases up to a LaAlO3 overlayer thickness of 6 unit cells before it levels out. Furthermore, we observe strong Ti 3 d charge carrier doping by oxygen vacancies. The RIXS data combined with photoelectron spectroscopy and transport measurements indicate the simultaneous presence of localized and itinerant charge carriers. At variance with previous interpretations, we show that in our excitation energy dependent RIXS measurements the amounts of localized and itinerant Ti 3 d electrons in the ground state do not scale with the intensities of the Raman and fluorescence peaks, respectively. Rather, we attribute the observation of either Raman components or fluorescence signal to the specific nature of the intermediate state reached in the RIXS excitation process.

  19. Effect of Dopant Loading on the Structural and Catalytic Properties of Mn-Doped SrTiO3 Catalysts for Catalytic Soot Combustion

    Directory of Open Access Journals (Sweden)

    Santiago Iván Suárez-Vázquez

    2018-02-01

    Full Text Available Soot particles have been associated with respiratory diseases and cancer. To decrease these emissions, perovskite-mixed oxides have been proposed due to their thermal stability and redox surface properties. In this work, SrTiO3 doped with different amounts of Mn were synthesized by the hydrothermal method and tested for soot combustion. Results show that at low Mn content, structural distortion, and higher Oads/Olat ratio were observed which was attributed to the high content of Mn3+ in Ti sites. On the other hand, increasing the Mn content led to surface segregation of manganese oxide. All synthesized catalysts showed mesopores in the range of 32–47 nm. In the catalytic combustion of soot, the samples synthesized in this work lowered the combustion temperature by more than 100 °C compared with the uncatalyzed reaction. The sample doped with 1 wt % of Mn showed the best catalytic activity. The activation energy of these samples was also calculated, and the order of decreasing activation energy is as follows: uncatalyzed > Mn0 > Mn8 > Mn4 > Mn1. The best catalytic activity for Mn1 was attributed to its physicochemical properties and the mobility of the oxygen from the bulk to the surface at temperatures higher than 500 °C.

  20. Theory of super-para-electric large polaron for gigantic photo-enhancements of dielectric constant and electronic conductivity in SrTiO3

    International Nuclear Information System (INIS)

    Yu Qiu; Nasu, Keiichiro

    2005-01-01

    In connection with the recent experimental discoveries on gigantic photoenhancements of the electronic conductivity and the quasi-static dielectric susceptibility in SrTiO 3 , we theoretically study a photo-generation mechanism of a charged ferroelectric domain in this quantum dielectric. The photo-generated electron, being quite itinerant in the 3d band of Ti 4+ , is assumed to couple weakly but quadratically with soft-anharmonic T 1u phonons in this quantum dielectric. The photo-generated electron is also assumed to couple strongly but linearly with the breathing type high energy phonons. Using a tight binding model for electron, we will show that these two types of electron-phonon couplings result in two types of polarons, a 'super-para-electric (SPE) large polaron' with a quasi-global parity violation, and an 'off-centre type self-trapped polaron' with only a local parity violation. We will also show that this SPE large polaron is nothing else but a singly charged (e - ) and conductive ferroelectric (or SPE) domain with a quasi macroscopic size. This polaron or domain is also shown to have a high mobility and a large quasi-static dielectric susceptibility

  1. Magnetism, Spin Texture, and In-Gap States: Atomic Specialization at the Surface of Oxygen-Deficient SrTiO_{3}.

    Science.gov (United States)

    Altmeyer, Michaela; Jeschke, Harald O; Hijano-Cubelos, Oliver; Martins, Cyril; Lechermann, Frank; Koepernik, Klaus; Santander-Syro, Andrés F; Rozenberg, Marcelo J; Valentí, Roser; Gabay, Marc

    2016-04-15

    Motivated by recent spin- and angular-resolved photoemission (SARPES) measurements of the two-dimensional electronic states confined near the (001) surface of oxygen-deficient SrTiO_{3}, we explore their spin structure by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic nonmagnetic DFT calculations display Rashba-like spin winding with a splitting of a few meV and when surface magnetism on the Ti ions is included, bands become spin-split with an energy difference ∼100  meV at the Γ point, consistent with SARPES findings. While magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures. Furthermore, we observe an atomic specialization phenomenon, namely, two types of electronic contributions: one is from Ti atoms neighboring the oxygen vacancies that acquire rather large magnetic moments and mostly create in-gap states; another comes from the partly polarized t_{2g} itinerant electrons of Ti atoms lying further away from the oxygen vacancy, which form the two-dimensional electron system and are responsible for the Rashba spin winding and the spin splitting at the Fermi surface.

  2. Built-in and Induced Polarization Across LaAlO3/SrTiO3 Heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Guneeta, Singh-Bhalla

    2011-08-15

    Ionic crystals terminated at oppositely charged polar surfaces are inherently unstable and expected to undergo surface reconstructions to maintain electrostatic stability. Essentially, an electric field that arises between oppositely charged atomic planes gives rise to a built-in potential that diverges with thickness. Here we present evidence of such a built-in potential across polar LaAlO{sub 3} thin films grown on SrTiO{sub 3} substrates, a system well known for the electron gas that forms at the interface. By performing tunneling measurements between the electron gas and metallic electrodes on LaAlO{sub 3} we measure a built-in electric field across LaAlO{sub 3} of 80.1 meV/{angstrom}. Additionally, capacitance measurements reveal the presence of an induced dipole moment across the heterostructure. We forsee use of the ionic built-in potential as an additional tuning parameter in both existing and novel device architectures, especially as atomic control of oxide interfaces gains widespread momentum.

  3. 2D Electron Gas with 100% Spin-Polarization in the (LaMnO3)2/(SrTiO3)2 Superlattice under Uniaxial Strain

    KAUST Repository

    Cossu, Fabrizio

    2014-07-28

    By first-principles calculations we investigate the structural, electronic, and magnetic properties of the (LaMnO3)2/(SrTiO3)2 superlattice. We find that a monoclinic C2h symmetry is energetically favorable and that the spins order ferromagnetically. Under both compressive and tensile uniaxial strain the electronic structure of the superlattice shows a half-metallic character. In particular, a fully spin-polarized two-dimensional electron gas, which traces back to the Ti 3dxy orbitals, is achieved under compressive uniaxial strain. The (LaMnO3)2/(SrTiO3)2 superlattice is analysed with respect to its structure, magnetism, and electronic properties. Our results demonstrate that uniaxial strain in an experimentally accessible range, both tensile and compressive, can be used to induce half-metallicity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Intrinsic origin of interface states and band offset profiling of nanostructured LaAlO3/SrTiO3 heterojunctions probed by element-specific resonant spectroscopies

    NARCIS (Netherlands)

    Drera, G.; Salvinelli, G.; Bondino, F.; Magnano, E.; Huijben, Mark; Brinkman, Alexander; Sangaletti, L.

    2014-01-01

    The origin of electronic states at the basis of the 2DEG found in conducting LaAlO 3 /SrTiO 3 interfaces (5 u.c. LaAlO 3 ) is investigated by resonant photoemission experiments at the Ti L 2,3 and La M 4,5 edges. As shown by the resonant enhancement at the Ti L 2,3 edge, electronic states at E F

  5. Computer graphic investigation on the epitaxial growth of superconductor films

    International Nuclear Information System (INIS)

    Miyamoto, A.; Iwamoto, S.; Inui, T.; Agusa, K.

    1989-01-01

    A mechanism of the epitaxial growth the oxide superconductor films has been investigated by using the computer graphics for the combination of orthorhombic Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 MgO, and ZrO 2 . The (001) plane Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 , MgO, and ZrO 2 . The (001) plane of Ba 2 YCu 3 O 7-x has been shown to fit the (100) plane of SrTiO 3 , MgO, and ZrO 2 . A crystallographic fit has also been proved between the (110) plane of Ba 2 YCu 3 O 7-x and the (110) plane of SrTiO 3 . These results are consistent with the experimental data about the epitaxial growth of the Ba 2 YCu 3 O 7-x films. Furthermore, detailed investigation of atomic arrangements has indicated some differences in the ionic interaction at the superconductor-substrate interface among SrTiO 3 , MgO, and ZrO 2 substrates. As for ZrO 2 (100) plane, for examples, ionic arrangements at the oxide layer is favorable only for the interaction with Y 3+ layer of Ba 2 YCu 3 O 7-x , while the Zr-O layer of ZrO 2 can interact with both Ba-O layer and Cu-O layer of Ba 2 YCu 3 O 7-x

  6. Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

    NARCIS (Netherlands)

    Farokhipoor, S.; Noheda, Beatriz

    2012-01-01

    BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71 degrees domain walls. A smaller amount of 109 degrees domain walls are also present at the boundaries between two adjacent

  7. Reproducible fabrication and characterization of YBa2Cu3O7 Josephson junctions and SQUIDs on SrTiO3 bi-crystal substrates

    International Nuclear Information System (INIS)

    Kromann, R.; Vase, P.; Shen, Y.Q.; Freltoft, T.

    1993-01-01

    The fabrication of Josephson junctions and SQUIDs using ceramic high T c superconductors continues to be a subject of great interest and activity. In the case of the YBCO family of superconductors, most of the research effort has been concentrated on the grain boundary junctions. This type of junction can be fabricated in a controlled way by a variety of approaches, such as the bi-crystal technique, the bi-epitaxial technique or the step-edge technique. From a fabrication point of view, the bi-crystal technique is by far the simplest of the three. The availability of (100) SrTiO 3 bi-crystals on a commercial basis has lead to the possibility of making Josephson junctions by a simple process involving only one deposition and one patterning step. Reproducibility of the junction parameters between junctions on the same chip is a key point for electronic applications of Josephson junctions requiring a large amount of Josephson junctions working at the same time, as for example in the voltage standard. Another key point is the uniformity of the barrier, i.e. the extent to which the junction behaves as an ideal SIS junction. In this work junction uniformity has been studied by Frauenhofer diffraction patterns. The Josephson junctions have also been used in the fabrication of dc SQUIDs. In this work we have tried to optimize the magnitude of the voltage modulation from the SQUID by varying the design parameters. The SQUIDs have been characterized in terms of I c , R n , voltage modulation and noise properties. (orig.)

  8. Investigations of surface related electronic properties in SmB6 and LaAlO3/SrTiO3 heterostructures

    Science.gov (United States)

    Adhikari, Sanjay

    This dissertation reports research performed on two types of two-dimensional. systems: SmB6 and LaAlO3/SrTiO3 (LAO/STO). SmB6 has been proposed to be. a topological Kondo insulator at low temperature. In order to understand carriers/. lattice dynamics and their interactions, femtosecond pump-probe spectroscopy. is performed in SmB6 single crystals and thin lms at variable temperatures. The. collective oscillation modes in GHz - THz and the change of carrier relaxations is. observed as a function of temperature. From the temperature dependent results. f 􀀀?d hybridization, opening of the hybridization gap, phonon bottleneck", and th. possible topological surface state formation is revealed. The topological surface state. should support helical Dirac dispersion with momentum-spin lockage. This dissertation. reports on current injection in SmB6 thin lm with circularly polarized light. at oblique incidence. This spin polarized photocurrent is concluded to be a direct. result of spin momentum lockage in SmB6. LAO/STO interface shows 2-dimensional electron gas (2DEG) at the interface. when the thickness of LAO is more than 3 unit cell. Carrier properties at the. LAO/STO interfaces are highly sensitive to the top surface termination of LAO. The spontaneous dissociation of water on LAO surface is systematically studied by. density functional theory and experimental surface characterizations. Extrinsic effects. from surface adsorbates were often ignored in the previous studies of the 2DEG. From the experiments, it is found that the dissociated water molecules, especially the. surface protons, strongly aect the interface density of states, electron distributions. and lattice distortions. The investigations also reveal the importance of additional. molecular water layers. These additional water layers, through hydrogen bonds, provide. an energetically feasible pathway for manipulating the surface-bonded protons. and thus, the interface electrical characteristics.

  9. Influence of SrTiO3 modification on dielectric properties of Mg(Zr0.05Ti0.95)O3 ceramics at microwave frequency

    International Nuclear Information System (INIS)

    Tseng, Ching-Fang; Lu, Shu-Cheng

    2013-01-01

    Highlights: ► The microwave dielectric properties of (1−x)Mg(Zr 0.05 Ti 0.95 )O 3 –xSrTiO 3 system have been discussed. ► The dielectric constant and τ f increased; nevertheless, the Q × f decreased with an increase in x. ► Second phases were formed and affected the microwave dielectric properties of (1−x)MZT–xST system. ► ε r of 20.8, Q × f of 257,000, and τ f of 0.2 ppm/°C were obtained for the 0.06Mg(Zr 0.05 Ti 0.95 )O 3 –0.04SrTiO 3 ceramics. ► Due to high-quality factor and near-zero τ f , MZT–ST demonstrate a good potential for use in microwave devices. -- Abstract: The microwave dielectric properties and microstructures were investigated in the (1−x)Mg(Zr 0.05 Ti 0.95 )O 3 –xSrTiO 3 (hereafter referred to as (1−x)MZT–xST) system. The compounds were prepared via the conventional solid-state reaction. Compositions in the (1−x)Mg(Zr 0.05 Ti 0.95 )O 3 –xSrTiO 3 system were designed to compensate the negative temperature coefficient of the resonant frequency of Mg(Zr 0.05 Ti 0.95 )O 3 . The values displayed nonmonotonic mixture-like behavior, because the TiO 2 phase was formed in the MZT composite ceramics with increasing x. A close zero τ f of 0.2 ppm/°C could be achieved at 0.96MZT–0.04ST with ε r = 20.8 and Q × f = 257,000 GHz

  10. Texturing of sodium bismuth titanate-barium titanate ceramics by templated grain growth

    Science.gov (United States)

    Yilmaz, Huseyin

    2002-01-01

    Sodium bismuth titanate modified with barium titanate, (Na1/2Bi 1/2)TiO3-BaTiO3 (NBT-BT), is a candidate lead-free piezoelectric material which has been shown to have comparatively high piezoelectric response. In this work, textured (Na1/2Bi1/2)TiO 3-BaTiO3 (5.5mol% BaTiO3) ceramics with pc (where pc denotes the pseudocubic perovskite cell) orientation were fabricated by Templated Grain Growth (TGG) or Reactive Templated Grain Growth (RTGG) using anisotropically shaped template particles. In the case of TGG, molten salt synthesized SrTiO3 platelets were tape cast with a (Na1/2Bi1/2)TiO3-5.5mol%BaTiO3 powder and sintered at 1200°C for up to 12 hours. For the RTGG approach, Bi4Ti3O12 (BiT) platelets were tape cast with a Na2CO3, Bi2O3, TiO 2, and BaCO3 powder mixture and reactively sintered. The TGG approach using SrTiO3 templates gave stronger texture along [001] compared to the RTGG approach using BiT templates. The textured ceramics were characterized by X-ray and electron backscatter diffraction for the quality of texture. The texture function was quantified by the Lotgering factor, rocking curve, pole figures, inverse pole figures, and orientation imaging microscopy. Electrical and electromechanical property characterization of randomly oriented and pc textured (Na1/2Bi1/2)TiO 3-5.5 mol% BaTiO3 rhombohedral ceramics showed 0.26% strain at 70 kV/cm, d33 coefficients over 500 pC/N have been obtained for highly textured samples (f ˜ 90%). The piezoelectric coefficient from Berlincourt was d33 ˜ 200 pC/N. The materials show considerable hysteresis. The presence of hysteresis in the unipolar-electric field curve is probably linked to the ferroelastic phase transition seen in the (Na 1/2Bi1/2)TiO3 system on cooling from high temperature at ˜520°C. The macroscopic physical properties (remanent polarization, dielectric constant, and piezoelectric coefficient) of random and textured ([001] pc) rhombohedral perovskites were estimated by linear averaging of single

  11. Nanoscale strontium titanate photocatalysts for overall water splitting.

    Science.gov (United States)

    Townsend, Troy K; Browning, Nigel D; Osterloh, Frank E

    2012-08-28

    SrTiO(3) (STO) is a large band gap (3.2 eV) semiconductor that catalyzes the overall water splitting reaction under UV light irradiation in the presence of a NiO cocatalyst. As we show here, the reactivity persists in nanoscale particles of the material, although the process is less effective at the nanoscale. To reach these conclusions, Bulk STO, 30 ± 5 nm STO, and 6.5 ± 1 nm STO were synthesized by three different methods, their crystal structures verified with XRD and their morphology observed with HRTEM before and after NiO deposition. In connection with NiO, all samples split water into stoichiometric mixtures of H(2) and O(2), but the activity is decreasing from 28 μmol H(2) g(-1) h(-1) (bulk STO), to 19.4 μmol H(2) g(-1) h(-1) (30 nm STO), and 3.0 μmol H(2) g(-1) h(-1) (6.5 nm STO). The reasons for this decrease are an increase of the water oxidation overpotential for the smaller particles and reduced light absorption due to a quantum size effect. Overall, these findings establish the first nanoscale titanate photocatalyst for overall water splitting.

  12. Aerosol chemistry in Titan's ionosphere: simultaneous growth and etching processes

    Science.gov (United States)

    Carrasco, Nathalie; Cernogora, Guy; Jomard, François; Etcheberry, Arnaud; Vigneron, Jackie

    2016-10-01

    Since the Cassini-CAPS measurements, organic aerosols are known to be present and formed at high altitudes in the diluted and partially ionized medium that is Titan's ionosphere [1]. This unexpected chemistry can be further investigated in the laboratory with plasma experiments simulating the complex ion-neutral chemistry starting from N2-CH4 [2]. Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan's atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan's atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan's atmosphere.The aim of the present study is to address if these two sorts of analogues are chemically equivalent or not, when produced in the same N2-CH4 plasma discharge. The chemical compositions of both these materials are measured by using elemental analysis, XPS analysis and Secondary Ion Mass Spectrometry. We find that films are homogeneous but significantly less rich in nitrogen and hydrogen than grains produced in the same experimental conditions. This surprising difference in their chemical compositions is explained by the efficient etching occurring on the films, which stay in the discharge during the whole plasma duration, whereas the grains are ejected after a few minutes [3]. The impact for our understanding of Titan's aerosols chemical composition is important. Our study shows that chemical growth and etching process are simultaneously at stake in Titan's ionosphere. The more the aerosols stay in the ionosphere, the more graphitized they get through etching process. In order to infer Titan's aerosols composition, our work highlights a need for constraints on the residence time of aerosols in Titan's ionosphere. [1] Waite et al. (2009) Science , 316, p. 870[2] Szopa et al. (2006) PSS, 54, p. 394[3] Carrasco et al. (2016) PSS, 128, p. 52

  13. Deposition of high Tc superconductor thin films by pulsed excimer laser ablation and their post-synthesis processing

    International Nuclear Information System (INIS)

    Ogale, S.B.

    1992-01-01

    This paper describes the use of pulsed excimer laser ablation technique for deposition of high quality superconductor thin films on different substrate materials such as Y stabilized ZrO 2 , SrTiO 3 , LiNbO 3 , Silicon and Stainless Steels, and dopant incorporation during the film depositions. Processing of deposited films using ion and laser beams for realisation of device features are presented. 28 refs., 16 figs

  14. Erbium implantation in Strontium Titanate

    CERN Document Server

    Araújo, J P; Alves, E; Correia, J G; Monteiro, T; Soares, J; Santos, L

    2002-01-01

    We report on the lattice location of Er in SrTiO$_{3}$ single crystals using the emission channeling technique. The angular distribution of conversion electrons emitted from $^{167m}$Er(T$_{1/2}$=2.27 s) was monitored with a position-sensitive detector following the room-temperature 60 keV implantation of the precursor isotope $^{167}$Tm(T$_{1/2}$=9.25 d) to a dose of 2$\\times$ 10$^{12}$ at./cm$^{2}$. The results for the sample annealed in vacuum at 610°C for 15 min provide direct evidence that Er occupies both Sr and Ti substitutional lattice sites. In addition, thermal recovery of lattice damage was also studied with RBS/C for SrTiO$_{3}$ implanted to doses of 5$\\times$ 10$^{14}$ and 5 $\\times$ 10$^{15}$ Er/cm$^{2}$. We further comment on preliminary photoluminescence results from these samples.

  15. Large anisotropy in colossal magnetoresistance of charge orbital ordered epitaxial Sm0.5Ca0.5MnO3 films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, J.L.

    2009-01-01

    We investigated the structure and magnetotransport properties of Sm0.5Ca0.5MnO3 (SCMO) films epitaxially grown on (011)-oriented SrTiO3 substrates, which exhibited clear charge/orbital ordering transition. A significant anisotropy of ~1000 in the colossal magnetoresistance (CMR) effect was observ...

  16. Transport measurements on superconducting YBa2Cu3O7-δ thin film lines

    International Nuclear Information System (INIS)

    Moeckly, B.H.; Lathrop, D.K.; Redinbo, G.F.; Russek, S.E.; Buhrman, R.A.

    1990-01-01

    Critical current densities, magnetic field response, and microwave response have been measured for laser ablated YBa 2 Cu 3 O 7-δ thin film lines on MgO and SrTiO 3 substrates. Films on SrTiO 3 have critical current densities > 1 x 10 6 A/cm 2 at 77 K and show uniform transport properties in lines of all sizes. Films on MgO have critical current densities which range between 10 2 and 10 6 A/cm 2 at 77 K and show considerable variation from device to device on the same chip. Narrow lines on MgO with low critical current densities show Josephson weak link structure which includes RSJ-like IV curves, microwave induced constant voltage steps, and a high sensitivity to magnetic field. The presence of the Josephson weak links if correlated with small amounts of misaligned grains in film on MgO

  17. Remember the Titans: A Theoretical Analysis

    Directory of Open Access Journals (Sweden)

    Rameca Leary

    2013-06-01

    Full Text Available This paper addresses a pivotal time in American history, when a 1971 Supreme Court mandate required southern school districts to end segregation (Daugherity, 2011. In Alexandria, Virginia, the merger of three rival high schools yielded a racially diverse football team and coaching staff. Beforehand, blacks and whites had their own schools. Many wondered how the new T.C. Williams Titans football team would fare. This paper takes an in-depth look at the film, Remember the Titans, which is based on this story. It analyzes the film using Gordon Allport’s (1954 Intergroup Contact Theory to assess how people from different backgrounds interact within group settings. It explores how communication barriers and the absence of knowledge can lead to ignorance. A 21st century legacy is also discussed, including ideas for further research. 

  18. Remember the Titans: A Theoretical Analysis

    Directory of Open Access Journals (Sweden)

    Rameca Leary

    2013-06-01

    Full Text Available This paper addresses a pivotal time in American history, when a 1971 Supreme Court mandate required southern school districts to end segregation (Daugherity, 2011. In Alexandria, Virginia, the merger of three rival high schools yielded a racially diverse football team and coaching staff. Beforehand, blacks and whites had their own schools. Many wondered how the new T.C. Williams Titans football team would fare. This paper takes an in-depth look at the film, Remember the Titans, which is based on this story. It analyzes the film using Gordon Allport’s (1954 Intergroup Contact Theory to assess how people from different backgrounds interact within group settings. It explores how communication barriers and the absence of knowledge can lead to ignorance. A 21st century legacy is also discussed, including ideas for further research.

  19. Titan's organic chemistry

    Science.gov (United States)

    Sagan, C.; Thompson, W. R.; Khare, B. N.

    1985-01-01

    Voyager discovered nine simple organic molecules in the atmosphere of Titan. Complex organic solids, called tholins, produced by irradiation of the simulated Titanian atmosphere, are consistent with measured properties of Titan from ultraviolet to microwave frequencies and are the likely main constituents of the observed red aerosols. The tholins contain many of the organic building blocks central to life on earth. At least 100-m, and possibly kms thicknesses of complex organics have been produced on Titan during the age of the solar system, and may exist today as submarine deposits beneath an extensive ocean of simple hydrocarbons.

  20. Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

    Directory of Open Access Journals (Sweden)

    Yaodong Yang

    2010-01-01

    Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

  1. Optical band gap and magnetic properties of unstrained EuTiO3 films

    International Nuclear Information System (INIS)

    Lee, J. H.; Ke, X.; Schiffer, P.; Podraza, N. J.; Kourkoutis, L. Fitting; Fennie, C. J.; Muller, D. A.; Heeg, T.; Schlom, D. G.; Roeckerath, M.; Schubert, J.; Freeland, J. W.

    2009-01-01

    Phase-pure, stoichiometric, unstrained, epitaxial (001)-oriented EuTiO 3 thin films have been grown on (001) SrTiO 3 substrates by reactive molecular-beam epitaxy. Magnetization measurements show antiferromagnetic behavior with T N =5.5 K, similar to bulk EuTiO 3 . Spectroscopic ellipsometry measurements reveal that EuTiO 3 films have a direct optical band gap of 0.93±0.07 eV.

  2. Raising the Titanic.

    Science.gov (United States)

    Baker, Romona

    1990-01-01

    Described is an activity in which groups of students investigate engineering principles by writing a feasibility study to raise the luxury liner, Titanic. The problem statement and directions, and suggestions for problem solutions are included. (CW)

  3. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

    Science.gov (United States)

    Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-12-14

    The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

  4. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions

    International Nuclear Information System (INIS)

    Avilés Félix, L; Sirena, M; Agüero Guzmán, L A; González Sutter, J; Pons Vargas, S; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-01-01

    The transport properties of ultra-thin SrTiO 3 (STO) layers grown over YBa 2 Cu 3 O 7 electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions. (paper)

  5. Clash of the Titans

    Science.gov (United States)

    Subramaniam, Karthigeyan

    2010-01-01

    WebQuests and the 5E learning cycle are titans of the science classroom. These popular inquiry-based strategies are most often used as separate entities, but the author has discovered that using a combined WebQuest and 5E learning cycle format taps into the inherent power and potential of both strategies. In the lesson, "Clash of the Titans,"…

  6. Titan's Ammonia Feature

    Science.gov (United States)

    Smythe, W.; Nelson, R.; Boryta, M.; Choukroun, M.

    2011-01-01

    NH3 has long been considered an important component in the formation and evolution of the outer planet satellites. NH3 is particularly important for Titan, since it may serve as the reservoir for atmospheric nitrogen. A brightening seen on Titan starting in 2004 may arise from a transient low-lying fog or surface coating of ammonia. The spectral shape suggests the ammonia is anhydrous, a molecule that hydrates quickly in the presence of water.

  7. Solution processing of YBa2Cu3O7-x thin films

    International Nuclear Information System (INIS)

    Singhal, A.; Paranthaman, M.; Specht, E.D.; Hunt, R.D.; Beach, D.B.; Martin, P.M.; Lee, D.F.

    1997-12-01

    The aim of this work was to develop a non-vacuum chemical deposition technique for YBa 2 Cu 3 O 7-x (YBCO) coated conductors on rolling-assisted biaxially textured substrates (RABiTS). The authors have chosen the metal-organic decomposition (MOD) and sol-gel precursor routes to grow textured YBCO films. In the MOD process, yttrium 2-ethylhexonate, barium neodecanoate, copper 2-ethylhexonate and toluene were used as the starting reagents. YBCO films processed by the MOD method on SrTiO 3 (100) single crystal substrates were consisted of c and a-axis oriented materials. These films also contained some amount of the random phase. The c and a-axis oriented materials were epitaxial on SrTiO 3 substrates. Films have a T c,onset of 89K and the best superconducting transition temperature of 63K. Films pyrolyzed at 525 C and subsequently annealed at 780 C in a p(O 2 ) of 3.5 x 10 -4 atm contained YBCO phase predominantly in a-axis orientation. In the sol-gel route, yttrium-isopropoxide, barium metal, copper methoxide and 2-methoxyethanol were used as the starting reagents. Sol-gel YBCO films on SrTiO 3 substrates were epitaxial and c-axis oriented

  8. The TITAN reversed-field-pinch fusion reactor study

    International Nuclear Information System (INIS)

    1990-01-01

    This report discusses the following topics: overview of titan-2 design; titan-2 fusion-power-core engineering; titan-2 divertor engineering; titan-2 tritium systems; titan-2 safety design and radioactive-waste disposal; and titan-2 maintenance procedures

  9. The TITAN reversed-field-pinch fusion reactor study

    Energy Technology Data Exchange (ETDEWEB)

    1990-01-01

    This report discusses the following topics: overview of titan-2 design; titan-2 fusion-power-core engineering; titan-2 divertor engineering; titan-2 tritium systems; titan-2 safety design and radioactive-waste disposal; and titan-2 maintenance procedures.

  10. Dielectric characterization of low-loss calcium strontium titanate fibers produced by laser floating zone technique for wireless communication

    International Nuclear Information System (INIS)

    Amaral, F.; Valente, M.A.; Costa, L.C.; Costa, F.M.

    2014-01-01

    Wireless communication technology assisted to a huge development during the last two decades, responding to the growing demand for small size and low weight devices such as cell phones and global positioning systems. The need for miniaturization and higher autonomy resulted in the development of new dielectric oxide ceramics with very specific properties, to be applied as dielectric resonators in filters, oscillators, and antennas. Some crucial properties as a high quality factor, high dielectric constant, and near zero temperature coefficient of resonant frequency must be considered during the selection of the appropriate materials. The present work deals with the preparation of calcium titanate (CaTiO 3 ), strontium titanate (SrTiO 3 ), and calcium strontium titanate (Ca x Sr 1-x TiO 3 ) fibers produced by laser floating zone (LFZ) technique. Our results show that fibers grown at lower pulling rates exhibit higher ε', for all the studied frequency range, including the microwave region. Moreover, the quality factor is always high envisaging the possibility to include these materials in future wireless device applications. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

    Science.gov (United States)

    Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

    2016-08-01

    We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

  12. Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

    Science.gov (United States)

    Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

    2013-03-01

    By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

  13. Titan Polar Landscape Evolution

    Science.gov (United States)

    Moore, Jeffrey M.

    2016-01-01

    With the ongoing Cassini-era observations and studies of Titan it is clear that the intensity and distribution of surface processes (particularly fluvial erosion by methane and Aeolian transport) has changed through time. Currently however, alternate hypotheses substantially differ among specific scenarios with respect to the effects of atmospheric evolution, seasonal changes, and endogenic processes. We have studied the evolution of Titan's polar region through a combination of analysis of imaging, elevation data, and geomorphic mapping, spatially explicit simulations of landform evolution, and quantitative comparison of the simulated landscapes with corresponding Titan morphology. We have quantitatively evaluated alternate scenarios for the landform evolution of Titan's polar terrain. The investigations have been guided by recent geomorphic mapping and topographic characterization of the polar regions that are used to frame hypotheses of process interactions, which have been evaluated using simulation modeling. Topographic information about Titan's polar region is be based on SAR-Topography and altimetry archived on PDS, SAR-based stereo radar-grammetry, radar-sounding lake depth measurements, and superposition relationships between geomorphologic map units, which we will use to create a generalized topographic map.

  14. Titan Orbiter Aerorover Mission

    Science.gov (United States)

    Sittler Jr., E. C.; Acuna, M.; Burchell, M. J.; Coates, A.; Farrell, W.; Flasar, M.; Goldstein, B. E.; Gorevan, S.; Hartle, R. E.; Johnson, W. T. K.

    2001-01-01

    We propose a combined Titan orbiter and Titan Aerorover mission with an emphasis on both in situ and remote sensing measurements of Titan's surface, atmosphere, ionosphere, and magnetospheric interaction. The biological aspect of the Titan environment will be emphasized by the mission (i.e., search for organic materials which may include simple organics to 'amono' analogues of amino acids and possibly more complex, lightening detection and infrared, ultraviolet, and charged particle interactions with Titan's surface and atmosphere). An international mission is assumed to control costs. NASA will provide the orbiter, launch vehicle, DSN coverage and operations, while international partners will provide the Aerorover and up to 30% of the cost for the scientific instruments through collaborative efforts. To further reduce costs we propose a single PI for orbiter science instruments and a single PI for Aerorover science instruments. This approach will provide single command/data and power interface between spacecraft and orbiter instruments that will have redundant central DPU and power converter for their instruments. A similar approach could be used for the Aerorover. The mission profile will be constructed to minimize conflicts between Aerorover science, orbiter radar science, orbiter radio science, orbiter imaging science, and orbiter fields and particles (FP) science. Additional information is contained in the original extended abstract.

  15. Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

    KAUST Repository

    Yang, Yang

    2014-11-01

    Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences. The symmetries of the fundamental Raman modes in 50-700 cm-1 were identified based on group theory. The symmetries of the high order Raman modes in 900-1500 cm-1 of BiFeO3 are determined for the first time, which can provide strong clarifications to the symmetry of the fundamental peaks in 400-700 cm-1 in return. Moreover, the lattice structures of BiFeO3 films are identified consequently on the basis of Raman spectroscopy. BiFeO3 films on SrRuO3 coated SrTiO3 (0 0 1) substrate, CaRuO3 coated SrTiO3 (0 0 1) substrate and tin-doped indium oxide substrate are found to be in the rhombohedral structure, while BiFeO3 film on SrRuO3 coated Nb: SrTiO3 (0 0 1) substrate is in the monoclinic structure. Our results suggest that polarized Raman spectroscopy would be a feasible tool to study the lattice structure of BiFeO3 films.

  16. Structural and magnetic anisotropy in the epitaxial FeV2O4 (110) spinel thin films

    Science.gov (United States)

    Shi, Xiaolan; Wang, Yuhang; Zhao, Kehan; Liu, Na; Sun, Gaofeng; Zhang, Liuwan

    2015-11-01

    The epitaxial 200-nm-thick FeV2O4(110) films on (110)-oriented SrTiO3, LaAlO3 and MgAl2O4 substrates were fabricated for the first time by pulsed laser deposition, and the structural, magnetic, and magnetoresistance anisotropy were investigated systematically. All the films are monoclinic, whereas its bulk is cubic. Compared to FeV2O4 single crystals, films on SrTiO3 and MgAl2O4 are strongly compressively strained in [001] direction, while slightly tensily strained along normal [110] and in-plane [ 1 1 ¯ 0 ] directions. In contrast, films on LaAlO3 are only slightly distorted from cubic. The magnetic hard axis is in direction, while the easier axis is along normal [110] direction for films on SrTiO3 and MgAl2O4, and in-plane [ 1 1 ¯ 0 ] direction for films on LaAlO3. Magnetoresistance anisotropy follows the magnetization. The magnetic anisotropy is dominated by the magnetocrystalline energy, and tuned by the magneto-elastic coupling.

  17. The tides of Titan.

    Science.gov (United States)

    Iess, Luciano; Jacobson, Robert A; Ducci, Marco; Stevenson, David J; Lunine, Jonathan I; Armstrong, John W; Asmar, Sami W; Racioppa, Paolo; Rappaport, Nicole J; Tortora, Paolo

    2012-07-27

    We have detected in Cassini spacecraft data the signature of the periodic tidal stresses within Titan, driven by the eccentricity (e = 0.028) of its 16-day orbit around Saturn. Precise measurements of the acceleration of Cassini during six close flybys between 2006 and 2011 have revealed that Titan responds to the variable tidal field exerted by Saturn with periodic changes of its quadrupole gravity, at about 4% of the static value. Two independent determinations of the corresponding degree-2 Love number yield k(2) = 0.589 ± 0.150 and k(2) = 0.637 ± 0.224 (2σ). Such a large response to the tidal field requires that Titan's interior be deformable over time scales of the orbital period, in a way that is consistent with a global ocean at depth.

  18. Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

    Science.gov (United States)

    Klug, Jeffrey A.

    The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

  19. Diurnal variations of Titan

    Science.gov (United States)

    Cui, J.; Galand, M.; Yelle, R. V.; Vuitton, V.; Wahlund, J.-E.; Lavvas, P. P.; Mueller-Wodarg, I. C. F.; Kasprzak, W. T.; Waite, J. H.

    2009-04-01

    We present our analysis of the diurnal variations of Titan's ionosphere (between 1,000 and 1,400 km) based on a sample of Ion Neutral Mass Spectrometer (INMS) measurements in the Open Source Ion (OSI) mode obtained from 8 close encounters of the Cassini spacecraft with Titan. Though there is an overall ion depletion well beyond the terminator, the ion content on Titan's nightside is still appreciable, with a density plateau of ~700 cm-3 below ~1,300 km. Such a plateau is associated with the combination of distinct diurnal variations of light and heavy ions. Light ions (e.g. CH5+, HCNH+, C2H5+) show strong diurnal variation, with clear bite-outs in their nightside distributions. In contrast, heavy ions (e.g. c-C3H3+, C2H3CNH+, C6H7+) present modest diurnal variation, with significant densities observed on the nightside. We propose that the distinctions between light and heavy ions are associated with their different chemical loss pathways, with the former primarily through "fast" ion-neutral chemistry and the latter through "slow" electron dissociative recombination. The INMS data suggest day-to-night transport as an important source of ions on Titan's nightside, to be distinguished from the conventional scenario of auroral ionization by magnetospheric particles as the only ionizing source on the nightside. This is supported by the strong correlation between the observed night-to-day ion density ratios and the associated ion lifetimes. We construct a time-dependent ion chemistry model to investigate the effects of day-to-night transport on the ionospheric structures of Titan. The predicted diurnal variation has similar general characteristics to those observed, with some apparent discrepancies which could be reconciled by imposing fast horizontal thermal winds in Titan's upper atmosphere.

  20. Ultrasonic force microscopy on poly(vinyl alcohol)/SrTiO3 nano-perovskites hybrid films

    International Nuclear Information System (INIS)

    Marino, Salvatore; Joshi, Girish M.; Lusuardi, Angelo; Cuberes, M. Teresa

    2014-01-01

    Atomic Force Microscopy (AFM) and Ultrasonic Force Microscopy (UFM) have been applied to the characterization of composite samples formed by SrTiO 3 (STO) nanoparticles (NPs) and polyvinyl alcohol (PVA). The morphological features of the STO NPs were much better resolved using UFM than contact-mode AFM topography. For high STO concentrations the individual STO NPs formed nanoclusters, which gathered in microaggregates. The STO aggregates, covered by PVA, exhibited no AFM frictional contrast, but were clearly distinguished from the PVA matrix using UFM. Similar aggregation was observed for NPs in the composite samples and for NPs deposited on top of a flat silicon substrate from milliQ water solution in the absence of polymer. In the hybrid films, most STO nanoparticles typically presented a lower UFM contrast than the PVA matrix, even though stiffer sample regions such as STO should give rise to a higher UFM contrast. STO NPs with intermediate contrast were characterized by an UFM halo of lower contrast at the PVA/STO interface. The results may be explained by considering that ultrasound is effectively damped on the nanometer scale at PVA/STO interfaces. According to our data, the nanoscale ultrasonic response at the PVA/STO interface plays a fundamental role in the UFM image contrast. - Highlights: • Hybrid films of SrTiO 3 nanoparticles and PVA have been studied using AFM, FFM and UFM. • The SrTiO 3 nanoparticles form nano-clusters from 3 to 5 individuals, which for high concentrations gather in micro-aggregates. • Most SrTiO 3 nanoparticles in the composite samples exhibited a lower (softer) UFM contrast than the PVA matrix. • In the UFM images, SrTiO 3 nanoparticles with intermediate contrast are delimited by a lower-contrast halo at the PVA boundary. • The nanoscale ultrasonic response at the PVA/SrTiO 3 interface plays a fundamental role in the UFM image contrast