Fractal formation of a Y-Ba-Cu-O thin film on SrTiO3

International Nuclear Information System (INIS)

Chow, L.; Chen, J.; Desai, V.; Sundaram, K.; Arora, S.

1989-01-01

Fractal formation has been observed after thermal annealing of the rf-sputtered Y-Ba-Cu-O thin film on SrTiO 3 substrate. Through energy-dispersive x-ray analysis, it was found that the composition of the fractal was YBa 2 Cu 3 O x and the surrounding film composition wasY 2 Ba 2 Cu 3 O x . The fractal dimensions D ranging from 1.26 to 1.65 were obtained using the standard sandbox method with different thresholds

Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

International Nuclear Information System (INIS)

Xiong Zhengwei; Sun Weiguo; Wang Xuemin; Jiang Fan; Wu Weidong

2012-01-01

Highlights: ► The BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs were successfully fabricated by L-MBE. ► The influence with the various concentrations of Ni nanocrystals embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. ► The BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss compared with the pure BaTiO 3 /SrTiO 3 superlattices. ► The dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory. - Abstract: The self-organized Ni nanocrystals (NCs) were embedded in BaTiO 3 /SrTiO 3 superlattices using laser molecular beam epitaxy (L-MBE). The stress of the composite films was increased with the increasing concentration of embedded Ni NCs, as investigation in stress calculation. The influence with the various concentrations of Ni NCs embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. The internal stress of the films was too strong to epitaxial growth of BaTiO 3 /SrTiO 3 superlattices. Compared with the pure BaTiO 3 /SrTiO 3 superlattices, the BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss. Furthermore, the dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory.

Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

Science.gov (United States)

Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

2015-08-01

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

Resistance switching of the interfacial conductance in amorphous SrTiO3 heterostructures

DEFF Research Database (Denmark)

Christensen, Dennis; Trier, Felix; Chen, Yunzhong

Complex oxides have attracted a lot of interest recently as this class of material exhibits a plethora of remarkable properties. In particular, a great variety of properties is observed in the heterostructure composed of lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3). For instance...

Effect of Sr/Ti Ratio on the Photocatalytic Properties of SrTiO3

International Nuclear Information System (INIS)

Sulaeman, U; Yin, S; Sato, T

2011-01-01

Since strontium titanate is a wide gap semiconductor, it requires UV light to generate the photocatalytic activities. Modification of strontium titanate to show photocatalytic activity under visible light irradiation is the essential work to efficiently utilize the sun light energy for environmental application. It is expected that the synthesis of SrTiO 3 with variation of Sr/Ti atomic ratio could induce the defect crystals having unique photocatalytic properties. The SrTiO 3 with various Sr/Ti atomic ratios were synthesized by microwave-assisted solvothermal reaction of SrCl 2 .6H 2 O and Ti(OC 3 H 7 ) 4 in KOH aqueous solutions with different atomic ratios of Sr/Ti. The products were characterized by TG-DTA, XRD and DRS. The photocatalytic activity was determined by DeNO x ability using LED lamps with the wavelengths of 627 nm (red), 530 nm (green), 445 nm (blue) and 390 nm (UV). The nanoparticles of perovskite type SrTiO 3 with the particle size of 30-40 nm were successfully synthesized. The visible light responsive photocatalytic activity was generated by adding excess amount of Sr. The photocatalytic activity in visible light could be enhanced by an increase in the Sr/Ti atomic ratio up to 1.25, indicating that the visible light responsive photocatalytic activity is due to the generation of new band gap between the conduction band and valence band of SrTiO 3 by the formation of oxygen vacancy.

Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructures

DEFF Research Database (Denmark)

Chen, Yunzhong; Pryds, Nini; Kleibeuker, Josée E.

2011-01-01

AlO3, SrTiO3, and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8MnO3 films on SrTiO3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface...

Suppression of oxygen diffusion by thin Al2O3 films grown on SrTiO3 studied using a monoenergetic positron beam

International Nuclear Information System (INIS)

Uedono, A.; Kiyohara, M.; Yasui, N.; Yamabe, K.

2005-01-01

The annealing behaviors of oxygen vacancies introduced by the epitaxial growth of thin SrTiO 3 and Al 2 O 3 films on SrTiO 3 substrates were studied by using a monoenergetic positron beam. The films were grown by molecular-beam epitaxy without using an oxidant. The Doppler broadening spectra of the annihilation radiation were measured as a function of the incident positron energy for samples fabricated under various growth conditions. The line-shape parameter S, corresponding to the annihilation of positrons in the substrate, was increased by the film growth, suggesting diffusion of oxygen from the substrate into the film and a resultant introduction of vacancies (mainly oxygen vacancies). A clear correlation between the value of S and the substrate conductivity was obtained. From isochronal annealing experiments, the Al 2 O 3 thin film was found to suppress the penetration of oxygen from the atmosphere for annealing temperatures below 600 deg. C. Degradation of the film's oxygen blocking property occurred due to the annealing at 700 deg. C, and this was attributed to the oxidation of the Al 2 O 3 by the atmosphere and the resultant introduction of vacancy-type defects

Highly oriented as-deposited superconducting laser ablated thin films of Y1Ba2Cu3O/sub 7-//sub δ/ on SrTiO3, zirconia, and Si substrates

International Nuclear Information System (INIS)

Koren, G.; Polturak, E.; Fisher, B.; Cohen, D.; Kimel, G.

1988-01-01

KrF excimer laser ablation of an Y 1 Ba 2 Cu 3 O/sub 7-//sub δ/ pellet in 0.1--0.2 Torr of O 2 ambient was used to deposit thin superconducting films onto SrTiO 3 , yttria-stabilized zirconia (YSZ), and silicon substrates at 600--700 0 C. The as-deposited 1-μm-thick films at 650--700 0 C substrate temperature were superconducting, without further high-temperature annealing. All films had a similar T/sub c/ onset of ∼92 K but different zero-resistance T/sub c/ of 90, 85, and 70 K for the films on SrTiO 3 , YSZ, and Si substrates, respectively. Angular x-ray diffraction analysis showed that all the films were highly oriented with the c axis perpendicular to their surface. Critical current densities at 77 K were about 40 000 and 10 000 A/cm 2 for the films on SrTiO 3 and YSZ, respectively. Smooth surface morphology was observed in all films, with occasional defects and cracks in the films on YSZ, which seems to explain the lower critical current in these films

Surface structural reconstruction of SrVO3 thin films on SrTiO3 (001)

Science.gov (United States)

Wang, Gaomin; Saghayezhian, Mohammad; Chen, Lina; Guo, Hangwen; Zhang, Jiandi

Paramagnetic metallic oxide SrVO3>(SVO) is an itinerant system known to undergo thickness-induced metal-insulator-transition (MIT) in ultrathin film form, which makes it a prototype system for the study of the mechanism behind metal-insulator-transition like structure distortion, electron correlations and disorder-induced localization. We have grown SrVO3 thin film with atomically flat surface through the layer-by-layer deposition by laser Molecular Beam Epitaxy (laser-MBE) on SrTiO3 (001) surface. Low Energy Electron Diffraction (LEED) measurements reveal that there is a (√2X √2) R45°surface reconstruction independent of film thickness. By using LEED-I(V) structure refinement, we determine the surface structure. In combination with X-ray Photoelectron Spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we discuss the implication on the MIT in ultrathin films below 2-3 unit cell thickness. This work is supported by the National Science Foundation under the NSF EPSCoR Cooperative Agreement No. EPS-1003897 with additional support from the Louisiana Board of Regents.

Epitaxial growth of SrTiO3/YBa2Cu3O7 - x heterostructures by plasma-enhanced metalorganic chemical vapor deposition

Science.gov (United States)

Liang, S.; Chern, C. S.; Shi, Z. Q.; Lu, P.; Safari, A.; Lu, Y.; Kear, B. H.; Hou, S. Y.

1994-06-01

We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7-x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7-x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1-0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7-x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7-x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7-x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10-6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.

Morphology and structural studies of WO_3 films deposited on SrTiO_3 by pulsed laser deposition

International Nuclear Information System (INIS)

Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

2016-01-01

Highlights: • Highly oriented WO_3 stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO_3 films at 700 °C from monoclinic to tetragonal. - Abstract: WO_3 films have been grown by pulsed laser deposition on SrTiO_3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

Magnetic and electrical transport properties of LaBaCo2O(5.5+δ) thin films on vicinal (001) SrTiO3 surfaces.

Science.gov (United States)

Ma, Chunrui; Liu, Ming; Collins, Gregory; Wang, Haibin; Bao, Shanyong; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Lin, Yuan; Whangbo, Myung-Hwan

2013-01-23

Highly epitaxial LaBaCo(2)O(5.5+δ) thin films were grown on the vicinal (001) SrTiO(3) substrates with miscut angles of 0.5°, 3.0°, and 5.0° to systemically study strain effect on its physical properties. The electronic transport properties and magnetic behaviors of these films are strongly dependent on the miscut angles. With increasing the miscut angle, the transport property of the film changes from semiconducting to semimetallic, which results most probably from the locally strained domains induced by the surface step terraces. In addition, a very large magnetoresistance (34% at 60 K) was achieved for the 0.5°-miscut film, which is ~30% larger than that for the film grown on the regular (001) SrTiO(3) substrates.

Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates

KAUST Repository

Park, Jihwey; Soh, Yeong-Ah; Aeppli, Gabriel; David, Adrian; Lin, Weinan; Wu, Tao

2014-01-01

The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10−3 millibars or 10−5 millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our

Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO3

International Nuclear Information System (INIS)

Schie, Marcel; Marchewka, Astrid; Waser, Rainer; Müller, Thomas; De Souza, Roger A

2012-01-01

A classical force-field model with partial ionic charges was applied to study the behaviour of oxygen vacancies in the perovskite oxide strontium titanate (SrTiO 3 ). The dynamical behaviour of these point defects was investigated as a function of temperature and defect concentration by means of molecular dynamics (MD) simulations. The interaction between oxygen vacancies and an extended defect, here a Σ3(111) grain boundary, was also examined by means of MD simulations. Analysis of the vacancy distribution revealed considerable accumulation of vacancies in the envelope of the grain boundary. The possible clustering of oxygen vacancies in bulk SrTiO 3 was studied by means of static lattice calculations within the Mott-Littleton approach. All binary vacancy-vacancy configurations were found to be energetically unfavourable.

Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO3.

Science.gov (United States)

Schie, Marcel; Marchewka, Astrid; Müller, Thomas; De Souza, Roger A; Waser, Rainer

2012-12-05

A classical force-field model with partial ionic charges was applied to study the behaviour of oxygen vacancies in the perovskite oxide strontium titanate (SrTiO(3)). The dynamical behaviour of these point defects was investigated as a function of temperature and defect concentration by means of molecular dynamics (MD) simulations. The interaction between oxygen vacancies and an extended defect, here a Σ3(111) grain boundary, was also examined by means of MD simulations. Analysis of the vacancy distribution revealed considerable accumulation of vacancies in the envelope of the grain boundary. The possible clustering of oxygen vacancies in bulk SrTiO(3) was studied by means of static lattice calculations within the Mott-Littleton approach. All binary vacancy-vacancy configurations were found to be energetically unfavourable.

Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures

Science.gov (United States)

Groenendijk, D. J.; Manca, N.; Mattoni, G.; Kootstra, L.; Gariglio, S.; Huang, Y.; van Heumen, E.; Caviglia, A. D.

2016-07-01

Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices.

Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

International Nuclear Information System (INIS)

Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

2013-01-01

We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO 3 film grown on (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )O 3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ∼12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness

Barium titanate thick films prepared by screen printing technique

Directory of Open Access Journals (Sweden)

Mirjana M. Vijatović

2010-06-01

Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

Fatigue-resistant epitaxial Pb(Zr,Ti)O3 capacitors on Pt electrode with ultra-thin SrTiO3 template layers

International Nuclear Information System (INIS)

Takahara, Seiichi; Morimoto, Akiharu; Kawae, Takeshi; Kumeda, Minoru; Yamada, Satoru; Ohtsubo, Shigeru; Yonezawa, Yasuto

2008-01-01

Lead zirconate-titanate Pb(Zr,Ti)O 3 (PZT) capacitors with Pt bottom electrodes were prepared on MgO substrates by pulsed laser deposition (PLD) technique employing SrTiO 3 (STO) template layer. Perovskite PZT thin films are prepared via stoichiometric target using the ultra-thin STO template layers while it is quite difficult to obtain the perovskite PZT on Pt electrode via stoichiometric target in PLD process. The PZT capacitor prepared with the STO template layer showed good hysteresis and leakage current characteristics, and it showed an excellent fatigue resistance. The ultra-thin STO template layers were characterized by angle-resolved X-ray photoelectron spectroscopy measurement. The effect of the STO template layer is discussed based on the viewpoint of the perovskite nucleation and diffusion of Pb and O atoms

Anion and cation diffusion in barium titanate and strontium titanate

International Nuclear Information System (INIS)

Kessel, Markus Franz

2012-01-01

data suggests that oxygen vacancies and electron holes play the key role in the formation of the equilibrium surface space-charge layers. The oxygen vacancy diffusivities and the oxygen vacancy migration enthalpy are compared to other experimentally and theoretically derived data for barium titanate and a global expression for the temperature dependence of the oxygen vacancy diffusivity is determined. The latter was used for a comparison of the oxygen vacancy diffusivity and the oxygen vacancy migration enthalpy for BaTiO 3 to other perovskite oxides. Furthermore, this work shows results from cation interdiffusion experiments between BaZrO 3 and SrTiO 3 . Thin films of barium zirconate were deposited on strontium titanate single crystals and the cation interdiffusion investigated as a function of temperature. All four cations show a main diffusion profile and an additional fast diffusion profile. Each main diffusion profile can be described independently by the thick-film solution of the diffusion equation suggesting the diffusion coefficients to be concentration independent. The fast diffusion profiles are attributed to fast diffusion of Ba and Zr along dislocations of the SrTiO 3 single crystals and fast diffusion of Sr and Ti along the grain boundaries of the polycrystalline thin-film BaZrO 3 . The migration enthalpies of the bulk profiles for all four cations are very similar. The results suggest a complex diffusion mechanism with coupled diffusion of the cation vacancies on the A and B sites of the perovskite lattice.

Epitaxial films of YBa2Cu3O/sub 7-//sub δ/ on NdGaO3, LaGaO3, and SrTiO3 substrates deposited by laser ablation

International Nuclear Information System (INIS)

Koren, G.; Gupta, A.; Giess, E.A.; Segmueller, A.; Laibowitz, R.B.

1989-01-01

Frequency-doubled Nd:YAG laser (532 nm) pulses of 1.7 J/cm 2 and 10 ns duration were used to deposit thin films of YBa 2 Cu 3 O/sub 7-//sub δ/ by laser ablation on NdGaO 3 , LaGaO 3 , and SrTiO 3 substrates held at 725 +- 5 0 C in 0.2 Torr of O 2 ambient. Electrical resistivities versus temperature of all films show normal metallic behavior and sharp superconducting transitions with T/sub c/ (R = 0) at 92--93 K. Critical current densities in 0.3--0.6 μm thick, 200 μm long, and 10--30 μm wide strips were measured to be 10 6 A/cm 2 at 60, 77, and 80 K in the films on LaGaO 3 , NdGaO 3 , and SrTiO 3 , respectively. X-ray diffraction patterns show that all films grew epitaxially, with domains of only two crystalline orientations rotated 90 0 with respect to each other in the a-b plane (consistent with twins), and the c axis perpendicular to the substrates. The closely matched lattice constants of the film and substrates (0.8--2.1%) result in epitaxial growth of the films

Crystallinity and electrical properties of neodymium-substituted bismuth titanate thin films

International Nuclear Information System (INIS)

Chen, Y.-C.; Hsiung, C.-P.; Chen, C.-Y.; Gan, J.-Y.; Sun, Y.-M.; Lin, C.-P.

2006-01-01

We report on the properties of Nd-substituted bismuth titanate Bi 4-x Nd x Ti 3 O 12 (BNdT) thin films for ferroelectric non-volatile memory applications. The Nd-substituted bismuth titanate thin films fabricated by modified chemical solution deposition technique showed much improved properties compared to pure bismuth titanate. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 640 deg. C and grain size was found to be considerably increased as the annealing temperature increased. The film properties were found to be strongly dependent on the Nd content and annealing temperatures. The measured dielectric constant of BNdT thin films was in the range 172-130 for Bi 4-x Nd x Ti 3 O 12 with x 0.0-0.75. Ferroelectric properties of Nd-substituted bismuth titanate thin films were significantly improved compared to pure bismuth titanate. For example, the observed 2P r and E c for Bi 3.25 Nd 0.75 Ti 3 O 12 , annealed at 680 deg. C, were 38 μC/cm 2 and 98 kV/cm, respectively. The improved microstructural and ferroelectric properties of BNdT thin films suggest their suitability for high density ferroelectric random access memory applications

Development of Strontium Titanate Thin films on Technical Substrates for Superconducting Coated Conductors

DEFF Research Database (Denmark)

Pallewatta, Pallewatta G A P; Yue, Zhao; Grivel, Jean-Claude

2012-01-01

SrTiO3 is a widely studied perovskite material due to its advantages as a template for high temperature superconducting tapes. Heteroepitaxial SrTiO3 thin films were deposited on Ni/W tapes using dip-coating in a precursor solution followed by drying and annealing under reducing conditions. Nearl...

Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates

KAUST Repository

Park, Jihwey

2014-02-24

The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10−3 millibars or 10−5 millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our results show that the interface between LaAlO3 and SrTiO3 is sharper when the oxygen pressure is lower. Over time, the formation of various crystalline phases is observed while the crystalline thickness of the LaAlO3 layer remains unchanged. X-ray scattering as well as atomic force microscopy measurements indicate three-dimensional growth of such phases, which appear to be fed from an amorphous capping layer present in as-grown samples.

Optical Properties of Nitrogen-Substituted Strontium Titanate Thin Films Prepared by Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Alexander Wokaun

2009-09-01

Full Text Available Perovskite-type N-substituted SrTiO3 thin films with a preferential (001 orientation were grown by pulsed laser deposition on (001-oriented MgO and LaAlO3 substrates. Application of N2 or ammonia using a synchronized reactive gas pulse produces SrTiO3-x:Nx films with a nitrogen content of up to 4.1 at.% if prepared with the NH3 gas pulse at a substrate temperature of 720 °C. Incorporating nitrogen in SrTiO3 results in an optical absorption at 370-460 nm associated with localized N(2p orbitals. The estimated energy of these levels is ≈2.7 eV below the conduction band. In addition, the optical absorption increases gradually with increasing nitrogen content.

Surface morphology and in-plane-epitaxy of SmBa2Cu3O7-δ films on SrTiO3 (001) substrates studied by STM and grazing incidence x-ray diffraction

DEFF Research Database (Denmark)

Jiang, Q.D.; Smilgies, D.M.; Feidenhans'l, R.

1996-01-01

The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films as ...... films above h(c2), introduction of screw dislocations leads to spiral growth.......The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films...... substrate. Three different types of surface morphology were observed by STM with increasing film thickness h: a) 2D growth for hh(c2). With GIXRD, a density modulation is observed in the films with a thickness below h(c2). For thicker...

Etude de capacités en couches minces à base d'oxydes métalliques à très forte constante diélectrique, BaTiO3, SrTiO3 et SrTiO3/BaTiO3 déposées par pulvérisation par faisceau d'ions

OpenAIRE

Guillan , Julie

2005-01-01

In a view of miniaturization in microelectronics and more particularly in the sector of mobile phone, perovskites materials with very high permittivity are interesting candidates to replace dielectrics currently used in the development of Metal/Insulator/Metal (MIM) capacitor. This work is devoted to the development and the characterization of thin layers of strontium titanate (SrTiO3) and barium titanate (BaTiO3) deposited by Ion Beam Sputtering (IBS) in capacitive structure Pt/high-k/Pt.An ...

Anisotropic electrical properties of epitaxial Yba2Cu3O7-gd films on (110) SrTiO3

International Nuclear Information System (INIS)

Gupta, A.; Koren, G.; Baseman, R.J.; Segmuller, A.; Holber, W.

1989-01-01

Epitaxial thin films of YBa 2 Cu 3 O 7 - δ were deposited on (110) SrTiO 3 at 600 degrees C in the presence of atomic oxygen using the laser ablation technique. X-ray diffraction patterns in the standard Bragg and grazing incidence modes show epitaxial growth of the films with their c-axis and axis parallel to the and directions in the plane of the substrate, respectively. Superconductivity with T c (R = ) = 82 K was found along the direction in the basal plane, whereas finite resistivity down to 5 k was observed along the c-axis direction. The authors maintain that these preliminary results suggest that YBa 2 Cu 3 O 7 - δ behaves like a true two-dimensional superconductor

Effect of crystal structure on strontium titanate thin films and their dielectric properties

Science.gov (United States)

Kampangkeaw, Satreerat

Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible

Near-surface effects of transient oxidation and reduction on Nb-doped SrTiO3 epitaxial thin films

Science.gov (United States)

Chang, C. F.; Chen, Q. Y.; Wadekar, P. V.; Lozano, O.; Wong, M. S.; Hsieh, W. C.; Lin, W. Y.; Ko, H. H.; Lin, Q. J.; Huang, H. C.; Ho, N. J.; Tu, L. W.; Liao, H. H.; Chinta, P. V.; Chu, W. K.; Seo, H. W.

2014-03-01

We studied the effects of transient oxidation and reduction of Nb-doped epitaxial thin films through variations of PAr and PO2. The samples were prepared by co-sputtering of Nb and SrTiO3 on LaAlO3 substrates. The Nb-content were varied from 0-33.7%, as determined by PIXE. Contact resistance, sheet resistance, and optical properties are used to discriminate the effects.

Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

KAUST Repository

Yao, Yingbang

2012-06-01

(001)-oriented BiFeO 3 (BFO) thin films were grown on Sr xCa 1-xRuO 3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO 3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.

Correlation between atomic structure and magnetic properties of La0.7Ca0.3MnO3 thin films grown on SrTiO3 (1 0 0)

International Nuclear Information System (INIS)

Rubio-Zuazo, J.; Andres, A. de; Taboada, S.; Prieto, C.; Martinez, J.L.; Castro, G.R.

2005-01-01

The crystallographic structure of La 0.7 Ca 0.3 MnO 3 (LCMO) ultra-thin films grown on SrTiO 3 (0 0 1) has been investigated by surface X-ray diffraction (SXD) and the correlation between their transport and magnetic properties and crystallographic structure is discussed. LCMO thin films in a thickness range between 2.4 and 27 nm were grown by DC-sputtering on SrTiO 3 (0 0 1). We distinguish two different crystallographic structures associated to the 2.4 and 27 nm thin films, respectively. The 27 nm film structure corresponds to a tetragonal perovskite (space group Pbnm), as has been reported for bulk LCMO. For the 2.4 nm film the La/Ca ions are located at the regular position of an ideal perovskite and the MnO 6 octahedrons are aligned along the c-axis. The MnO 2 stacking layer (basal plane) is distorted and coplanar to the a-b crystallographic axis with an anti-correlation between octahedron layers. This observed distortion is not compatible with the Pbnm space group. The new phase, which cannot be excluded to coexist at the interface of thicker films, can be described, as an example, through an I4/mcm or Pbcn space group. Based on the observed structure, plausible models to explain their transport and magnetic behaviour are proposed. For the 2.4 nm film, an octahedron in-plane (basal plane) distortion induced by the substrate is observed. Thicker films behave structurally and magnetically as bulk-like materials

Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

DEFF Research Database (Denmark)

Chen, Yunzhong; Stamate, Eugen; Pryds, Nini

2011-01-01

When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely...

Atomic control of substrate termination and heteroepitaxial growth of SrTiO sub 3 /LaAlO sub 3 films

CERN Document Server

Kim, D W; Choi, C; Lim, K D; Noh, T W; Lee, D R; Park, J H; Lee, K B

2000-01-01

The roles of substrate termination in the growth behaviors of SrTiO sub 3 (STO) films were investigated. With heat treatment and an atomic layer deposition technique, LaAlO sub 3 (LAO) substrates with two kinds of terminations, i.e., LaO- and AlO sub 2 -terminated ones, could be prepared. On top of them STO films were grown by using laser molecular beam epitaxy. In the case of the STO/LaO-LAO film, a transition from layer-by-layer growth to island growth was observed after growth of about 10 monolayers (ML). On the other hand, the STO/AlO sub 2 -LAO film could be grown in a layer-by-layer mode with a flat surface up to 40 ML. We suggest that defects induced by charge compensation influence the strain states and the physical properties of oxide heterostructures significantly.

Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy

International Nuclear Information System (INIS)

Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

2015-01-01

LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO 3 films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application

Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

International Nuclear Information System (INIS)

Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

2007-01-01

Strained La 0.8 Ba 0.2 MnO 3 thin films on SrTiO 3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature T C increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La 1-x (Sr y Ba 1-y ) x MnO 3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of T C is attributed to the combination of the strain and interdiffusion effects

Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

Science.gov (United States)

Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

2007-02-01

Strained La0.8Ba0.2MnO3 thin films on SrTiO3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature TC increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La1-x(SryBa1-y)xMnO3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of TC is attributed to the combination of the strain and interdiffusion effects.

Deposition of SrTiO3 films by electrophoresis with thickness and particle size control

International Nuclear Information System (INIS)

Junior, W.D.M.; Pena, A.F.V.; Souza, A.E.; Santos, G.T.A.; Teixeira, S.R.; Senos, A.M.R.; Longo, E.

2012-01-01

The SrTiO3 (ST) is a material that exhibits semiconducting characteristics and interesting electrical properties. In room temperature has a structure of high cubic symmetry. The size of the crystallites of this material directly influences this symmetry, changing its network parameters. ST nanoparticles are obtained by hydrothermal method assisted by microwave (MAH). ST films are prepared by electrophoretic deposition (EPD). Approximately 1 g of the powder is dissolved in 100 ml of acetone and 1.5 ml of triethanolamine. The stainless steel substrates are arranged horizontally in the solution. The depositions are performed for 1-10 min and subjected to a potential difference of 20-100 V. The films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). The characterizations show that it is possible to control both the thickness and size of the crystallites of the film depending on the deposition parameters adopted. (author)

Misfit dislocations of anisotropic magnetoresistant Nd0.45Sr0.55MnO3 thin films grown on SrTiO3 (1 1 0) substrates

International Nuclear Information System (INIS)

Tang, Y.L.; Zhu, Y.L.; Meng, H.; Zhang, Y.Q.; Ma, X.L.

2012-01-01

Nd 0.45 Sr 0.55 MnO 3 is an A-type antiferromagnetic manganite showing obvious angular-dependent magnetoresistance, which can be tuned by misfit strain. The misfit strain relaxation of Nd 0.45 Sr 0.55 MnO 3 thin films is of both fundamental and technical importance. In this paper, microstructures of epitaxial Nd 0.45 Sr 0.55 MnO 3 thin films grown on SrTiO 3 (1 1 0) substrates by pulsed laser deposition were investigated by means of (scanning) transmission electron microscopy. The Nd 0.45 Sr 0.55 MnO 3 thin films exhibit a two-layered structure: a continuous perovskite layer epitaxial grown on the substrate followed by epitaxially grown columnar nanostructures. An approximately periodic array of misfit dislocations is found along the interface with line directions of both 〈1 1 1〉 and [0 0 1]. High-resolution (scanning) transmission electron microscopy reveals that all the misfit dislocations possess a〈1 1 0〉-type Burgers vectors. A formation mechanism based on gliding or climbing of the dislocations is proposed to elucidate this novel misfit dislocation configuration. These misfit dislocations have complex effects on the strain relaxation and microstructure of the films, and thus their influence needs further consideration for heteroepitaxial perovskite thin film systems, especially for films grown on substrates with low-symmetry surfaces such as SrTiO 3 (1 1 0) and (1 1 1), which are attracting attention for their potentially new functions.

Structural and thermal characterization of La5Ca9Cu24O41 thin films grown by pulsed laser deposition on (1 1 0) SrTiO3 substrates

International Nuclear Information System (INIS)

Svoukis, E.; Athanasopoulos, G.I.; Altantzis, Th.; Lioutas, Ch.; Martin, R.S.; Revcolevschi, A.; Giapintzakis, J.

2012-01-01

In the present study stoichiometric, b-axis oriented La 5 Ca 9 Cu 24 O 41 thin films were grown by pulsed laser deposition on (1 1 0) SrTiO 3 substrates in the temperature range 600–750 °C. High resolution transmission electron microscopy was employed to investigate the growth mechanism and the epitaxial relationship between the SrTiO 3 substrates and the La 5 Ca 9 Cu 24 O 41 films grown at 700 °C. The 3-ω method was used to measure the cross-plane thermal conductivity of La 5 Ca 9 Cu 24 O 41 films in the temperature range 50–350 K. The observed glass-like behavior is attributed to atomic-scale defects, grain boundaries and an interfacial layer formed between film and substrate.

Mechanisms of charge transfer and redistribution in LaAlO3/SrTiO3 revealed by high-energy optical conductivity.

Science.gov (United States)

Asmara, T C; Annadi, A; Santoso, I; Gogoi, P K; Kotlov, A; Omer, H M; Motapothula, M; Breese, M B H; Rübhausen, M; Venkatesan, T; Ariando; Rusydi, A

2014-04-14

In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on nonpolar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5e(-) from the LaAlO3 film into the LaAlO3/SrTiO3 interface is expected. Here we show that in conducting samples (≥ 4 unit cells of LaAlO3) there is indeed a ~0.5e(-) transfer from LaAlO3 into the LaAlO3/SrTiO3 interface by studying the optical conductivity in a broad energy range (0.5-35 eV). Surprisingly, in insulating samples (≤ 3 unit cells of LaAlO3) a redistribution of charges within the polar LaAlO3 sublayers (from AlO2 to LaO) as large as ~0.5e(-) is observed, with no charge transfer into the interface. Hence, our results reveal the different mechanisms for the polarization catastrophe compensation in insulating and conducting LaAlO3/SrTiO3 interfaces.

Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Bai, G. R.; Streiffer, S. K.; Baumann, P. K.; Auciello, O.; Ghosh, K.; Stemmer, S.; Munkholm, A.; Thompson, Carol; Rao, R. A.; Eom, C. B.

2000-01-01

Metal-organic chemical vapor deposition was used to prepare Pb(Mg 1/3 Nb 2/3 )O 3 (PMN) thin films on (001) SrTiO 3 and SrRuO 3 /SrTiO 3 substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO 3 substrate was found, with a (001) rocking curve width of 0.1 degree sign , and in-plane rocking-curve width of 0.8 degree sign . The root-mean-square surface roughness of a 200-nm-thick film on SrTiO 3 was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO 3 /SrTiO 3 were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm 2 . (c) 2000 American Institute of Physics

Resistance change effect in SrTiO3/Si (001) isotype heterojunction

Science.gov (United States)

Huang, Xiushi; Gao, Zhaomeng; Li, Pei; Wang, Longfei; Liu, Xiansheng; Zhang, Weifeng; Guo, Haizhong

2018-02-01

Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.

Resistance switching at the interface of LaAlO3/SrTiO3

DEFF Research Database (Denmark)

Chen, Yunzhong; Zhao, J.L.; Sun, J.R.

2010-01-01

At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching ...

Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

International Nuclear Information System (INIS)

Rozier, Y.; Gautier, B.; Hyvert, G.; Descamps, A.; Plossu, C.; Dubourdieu, C.; Ducroquet, F.

2009-01-01

The properties of SrTiO 3 thin films, grown by liquid injection metal organic chemical vapor deposition on Si/SiO 2 , using a mixture of precursors, have been investigated at the nanoscale using an Atomic Force Microscope in the so-called Conductive Atomic Force Microscopy mode. Maps of the leakage currents with a nanometric resolution have been obtained on films elaborated at different temperatures and stoichiometries in order to discriminate the role of each parameter on the onset of leakage currents in the resulting layers. It appears that the higher the deposition temperature, the higher the leakage currents of the films. The mapping with a nanometric precision allows to show a heterogeneous behaviour of the surface with leaky grains and insulating boundaries. The study of films elaborated at the same temperature with different compositions supports the assumption that the leakage currents on Ti-rich layers are far higher than on Sr-rich layers

Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

2008-01-01

Co(0 0 0 1) hcp /Fe(1 1 0) bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO 3 (1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0) bcc soft magnetic layer grew epitaxially on SrTiO 3 (1 1 1) substrate with two type variants, Nishiyama-Wasserman and Kurdjumov-Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1) hcp interlayer, while hcp-Co layer formed on Au(1 1 1) fcc or Ag(1 1 1) fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application

Localized versus itinerant states created by multiple oxygen vacancies in SrTiO3

Science.gov (United States)

Jeschke, Harald O.; Shen, Juan; Valentí, Roser

2015-02-01

Oxygen vacancies in strontium titanate surfaces (SrTiO3) have been linked to the presence of a two-dimensional electron gas with unique behavior. We perform a detailed density functional theory study of the lattice and electronic structure of SrTiO3 slabs with multiple oxygen vacancies, with a main focus on two vacancies near a titanium dioxide terminated SrTiO3 surface. We conclude based on total energies that the two vacancies preferably inhabit the first two layers, i.e. they cluster vertically, while in the direction parallel to the surface, the vacancies show a weak tendency towards equal spacing. Analysis of the nonmagnetic electronic structure indicates that oxygen defects in the surface TiO2 layer lead to population of Ti {{t}2g} states and thus itinerancy of the electrons donated by the oxygen vacancy. In contrast, electrons from subsurface oxygen vacancies populate Ti eg states and remain localized on the two Ti ions neighboring the vacancy. We find that both the formation of a bound oxygen-vacancy state composed of hybridized Ti 3eg and 4p states neighboring the oxygen vacancy as well as the elastic deformation after extracting oxygen contribute to the stabilization of the in-gap state.

Epitaxial growth of YBa2Cu307−δ films on SrTiO3 (100) by direct solution precursor deposition

International Nuclear Information System (INIS)

Bustamante, A; Garcia, Jorge; Osorio, Ana M; Valladares, Luis De Los Santos; Barnes, C H W; González, J C; Azuma, Y; Majima, Y; Aguiar, J Albino

2014-01-01

We study the optimal temperature to obtain YBa 2 Cu 3 O 7-δ epitaxial films grown onto SrTiO 3 substrates by direct solution deposition. The samples received heat treatment at 820, 840 and 860 °C, then characterized by XRD, observing the (00l) profiles; and magnetic susceptibility measurements. The T C-onset for all the samples was 90 K. In addition, the current – voltage (I-V) measurements shows typical tunneling signals corresponding to normal metal-superconducting junctions indicating the films are promising for potential electrical applications.

Electronic structure and topography of annealed SrTiO3(1 1 1) surfaces studied with MIES and STM

International Nuclear Information System (INIS)

Goemann, Anissa; Goemann, Karsten; Frerichs, Martin; Kempter, Volker; Borchardt, Guenter; Maus-Friedrichs, Wolfgang

2005-01-01

Perovskites of ABO 3 type like strontium titanate (SrTiO 3 ) are of great practical concern as materials for oxygen sensors operating at high temperatures. It is well known that the surface layer shows different properties compared to the bulk. Numerous studies exist for the SrTiO 3 (1 0 0) and (1 1 0) surfaces which have investigated the changes in the electronic structure and topography as a function of the preparation conditions. They have indicated a rather complex behaviour of the surface and the near surface region of SrTiO 3 at elevated temperatures. Up to now, the behaviour of the SrTiO 3 (1 1 1) surfaces under thermal treatment is not sufficiently known. This contribution is intended to work out the relation between alteration of the surface topography with respect to the preparation conditions and the simultaneous changes of the electronic structure. We applied scanning tunneling microscopy (STM) to investigate the surface topography and, additionally, metastable impact electron spectroscopy (MIES) to study the surface electronic structure of reconstructed SrTiO 3 (1 1 1) surfaces. The crystals were heated up to 1000 deg. C under reducing and oxidizing conditions. Both preparation conditions cause strong changes of the surface topography and electronic structure. A microfaceting of the topmost layers is found

Antibacterial Properties of Titanate Nano fiber Thin Films Formed on a Titanium Plate

International Nuclear Information System (INIS)

Yada, M.; Inoue, Y.; Morita, T.; Torikai, T.; Watari, T.; Noda, I.; Hotokebuchi, T.

2013-01-01

A sodium titanate nano fiber thin film and a silver nanoparticle/silver titanate nano fiber thin film formed on the surface of a titanium plate exhibited strong antibacterial activities against methicillin-resistant Staphylococcus aureus, which is one of the major bacteria causing in-hospital infections. Exposure of the sodium titanate nano fiber thin film to ultraviolet rays generated a high antibacterial activity due to photo catalysis and the sodium titanate nano fiber thin film immediately after its synthesis possessed a high antibacterial activity even without exposure to ultraviolet rays. Elution of silver from the silver nanoparticle/silver titanate nano fiber thin film caused by the silver ion exchange reaction was considered to contribute substantially to the strong antibacterial activity. The titanate nano fiber thin films adhered firmly to titanium. Therefore, these titanate nano fiber thin film/titanium composites will be extremely useful as implant materials that have excellent antibacterial activities.

Epitaxial growth and dielectric properties of Bi sub 2 VO sub 5 sub . sub 5 thin films on TiN/Si substrates with SrTiO sub 3 buffer layers

CERN Document Server

Lee, H Y; Choi, B C; Jeong, J H; Joseph, M; Tabata, H; Kawai, T

2000-01-01

Bi sub 2 VO sub 5 sub . sub 5 (BVO) thin films were epitaxially grown on SrTiO sub 3 /TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high alpha axis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO sub 3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8 approx 4 in the applied frequency range between 10 sup 2 and 10 sup 6 Hz.

Structure/Property Relationships for Sol-gel Derived YBa2Cu3O7-d and SrTiO3 Films

Science.gov (United States)

Dawley, Jeff; Clem, Paul; Siegal, Michael; Overmyer, Don

2001-03-01

Solution deposition of c-axis oriented YBa2Cu3O7-d (YBCO) films on buffered RABiT substrates is a potential method for rapid, low cost production of superconducting tapes for power transmission and other applications. For this work, 100-250 nm thick YBCO and SrTiO3 (STO) films have been prepared by spin-coating and dip-coating sol-gel solutions onto LaAlO3 (100) and RABiT Ni (200) substrates. Biaxially textured STO coatings have been deposited on LaAlO3 and RABiT Ni by using a "templating" technique and controlling growth temperature and pO2. YBCO films grown on STO coated LaAlO3 possess comparable superconducting properties to YBCO films grown directly on LaAlO3 ( 1 MA/cm2 at 77K), indicating that a high quality STO layer does not degrade the crystalline quality of the YBCO. The effects of processing parameters on the STO buffer layer and novel processing techniques for decreasing the processing time and simplifying the integration of sol-gel YBCO with Ni substrates will be discussed. Sandia is a multiprogram laboratory operated by Sandia Corp., a Lockheed Martin Company, for the US Dept. Of Energy under contract DE-AC04-94A185000.

Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films

Directory of Open Access Journals (Sweden)

Takanori Kiguchi, Kenta Aoyagi, Yoshitaka Ehara, Hiroshi Funakubo, Tomoaki Yamada, Noritaka Usami and Toyohiko J Konno

2011-01-01

Full Text Available We have studied the strain field around the 90° domains and misfit dislocations in PbTiO3/SrTiO3 (001 epitaxial thin films, at the nanoscale, using the geometric phase analysis (GPA combined with high-resolution transmission electron microscopy (HRTEM and high-angle annular dark field––scanning transmission electron microscopy (HAADF-STEM. The films typically contain a combination of a/c-mixed domains and misfit dislocations. The PbTiO3 layer was composed from the two types of the a-domain (90° domain: a typical a/c-mixed domain configuration where a-domains are 20–30 nm wide and nano sized domains with a width of about 3 nm. In the latter case, the nano sized a-domain does not contact the film/substrate interface; it remains far from the interface and stems from the misfit dislocation. Strain maps obtained from the GPA of HRTEM images show the elastic interaction between the a-domain and the dislocations. The normal strain field and lattice rotation match each other between them. Strain maps reveal that the a-domain nucleation takes place at the misfit dislocation. The lattice rotation around the misfit dislocation triggers the nucleation of the a-domain; the normal strains around the misfit dislocation relax the residual strain in a-domain; then, the a-domain growth takes place, accompanying the introduction of the additional dislocation perpendicular to the misfit dislocation and the dissociation of the dislocations into two pairs of partial dislocations with an APB, which is the bottom boundary of the a-domain. The novel mechanism of the nucleation and growth of 90° domain in PbTiO3/SrTiO3 epitaxial system has been proposed based on above the results.

Interface structure and electronic properties of SrTiO3 and YBa2Cu3O7-δ crystals and thin films

International Nuclear Information System (INIS)

Thiess, S.

2007-01-01

Two new extensions of the X-ray standing wave (XSW) technique, made possible by the intense highly collimated X-ray beams from undulators at the ESRF, are described in this thesis. First, the XSW method was applied in a structural study to solve the nucleation mechanism of the high temperature superconductor YBa 2 Cu 3 O 7-δ on the (001) surface of SrTiO 3 . Second, the valence electronic structures of SrTiO 3 and YBa 2 Cu 3 O 7-δ were investigated. Finally, recent developments in the field of photoelectron spectroscopy in the hard X-ray region are described. The X-ray standing wave method is used in combination with fluorescence, Auger or photoelectron spectroscopy and lends very high spatial resolution power to these analytical techniques. Previously, the XSW method has been used for structure determination of surfaces and interfaces. The currently available X-ray intensities permit extensions to the XSW technique. Two recently established applications, described in this thesis, are XSW real space imaging and XSW valence electronic structure analysis. XSW real space imaging was employed to analyse the atomic structure of 0.5 and 1.0 layers of YBa 2 Cu 3 O 7-δ deposited on SrTiO 3 (001). Three-dimensional images of the atomic distributions were reconstructed for each of the elements from experimentally determined Fourier components of the atomic distribution functions. The images confirmed the formation of a perovskite precursor phase prior to the formation of the YBa 2 Cu 3 O 7-δ phase during the growth of the first monolayer of the film. XSW valence electronic structure analysis applied to SrTiO 3 identified the valence band contributions arising from the strontium, titanium, and oxygen sites of the crystal lattice. Relations between the site-specific valence electronic structure and the lattice structure were established. The experimental results agree very well with predictions by state-of-the-art ab initio calculations. X-ray absorption cross sections for

Fabrication and properties of yttrium doped barium titanate film by RF sputtering

International Nuclear Information System (INIS)

Igarashi, H.; Yuasa, M.; Okazaki, K.

1985-01-01

Semiconductive barium titanate films were fabricated by RF sputtering on fused quartz, alumina and barium titanate ceramic substrates using barium titanate ceramic with a small amount of yttria as a target. The films on the barium titanate substrates turned blue color and showed a small PTC effect by heat-treating at 1000 0 C in the air after deposition at the substrate temperature of 600 0 C

Microstructural Characterisation of Cuprate/Manganate Films on (110) SrTiO3 Deposited by Laser Ablation

International Nuclear Information System (INIS)

Tse, Y Y; Chakalov, R I; Joshi, M M; Jones, I P; Muirhead, C M; Palai, R

2006-01-01

Cross-sectional TEM and microanalysis were carried out to understand at a microscopic level the effects of microstructure and chemistry on the physical properties of manganites and manganite/cuprate films. TEM observations on pure LCMO grown on a (110) STO substrate were carried out first to determine the defect structure and detect any formation of second phase precipitates, as well as microstructural changes not detectable by X-ray reflections. La 0.7 Ca 0.3 MnO 3 (LCMO) grows epitaxially on a (110) SrTiO 3 (STO) substrate. HRTEM reveals a nearly defect-free interface between LCMO and STO with a few irregularly arranged misfit dislocations. The microstructure obtained from laser ablated nanometre scaled La 0.7 Ca 0.3 MnO 3 (LCMO)/YBa 2 Cu 3 O 7 -δ (YBCO)/PrBa 2 Cu 3 O 7 (PBCO) multilayers on (110) STO was also studied. Diffraction patterns show that all films grow epitaxially on top of the (110) STO substrate, with the c-axis of YBCO in plane. There is a roughness of about 10nm between PBCO and YBCO and the roughness is increased at the YBCO - LCMO interface

Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

International Nuclear Information System (INIS)

Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Posadas, Agham B.; Demkov, Alexander A.; Hu, Chengqing; Yu, Edward T.; Bruley, John

2014-01-01

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO 3 (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO 3 (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225  °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600  °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure

Control of growth mode in SrTiO3 homoepitaxy under 500 deg. C

International Nuclear Information System (INIS)

Li Yanrong; Li Jinlong; Zhang Ying; Wei Xianhua; Deng Xinwu; Liu Xingzhao

2004-01-01

Homoepitaxial SrTiO 3 thin films were grown by laser molecular beam epitaxy. The growth mode was determined by in-situ reflective high energy electron diffraction, and the surface of the films was studied by ex-situ atomic force microscopy. At the deposition rate of 0.16A ring /sec and the laser energy density of 6J/cm 2 , layer-by-layer growth was observed above 460 deg. C substrate temperature, while the Stranski-Krastanov growth mode, that is layer-by-layer growth plus island growth mode, prevailed between 460 deg. C and 410 deg. C. On further decreasing the substrate temperature, the island growth was determined under 410 deg. C. With the optimization of deposition process in terms of laser energy density and deposition rate, the lowest crystallization temperatures of SrTiO 3 films grown in layer-by-layer growth mode were obtained as low as 280 deg. C. The effects of laser energy density on growth temperature were studied

Measurement of thermal conductance of La0.7Sr0.3MnO3 thin films deposited on SrTiO3 and MgO substrates

Science.gov (United States)

Aryan, A.; Guillet, B.; Routoure, J. M.; Fur, C.; Langlois, P.; Méchin, L.

2015-01-01

We present measurements of the thermal conductance of thin-film-on-substrate structures that could serve as thin film uncooled bolometers. Studied samples were 75 nm thick epitaxial La0.7Sr0.3MnO3 thin films deposited on SrTiO3 (0 0 1) and MgO (0 0 1) substrates patterned in square geometries of areas ranging from 50 μm × 50 μm to 200 μm × 200 μm. The model allows estimating thermal boundary conductance values at the interface between film and substrate of 0.28 ± 0.08 × 106 W K-1 m-2 for LSMO/STO (0 0 1) and 5.8 ± 3.0 × 106 W K-1 m-2 for LSMO/MgO (0 0 1) from measurements performed in the static regime. Analytical expressions of thermal conductance and thermal capacitance versus modulation frequency are compared to measurements of the elevation temperature due to absorbed incoming optical power. The overall good agreement found between measurements and model finally provides the possibility to calculate the bolometric response of thin film bolometers, thus predicting their frequency response for various geometries.

Chemical solution deposited BaPbO3 buffer layers for lead zirconate titanate ferroelectric films

International Nuclear Information System (INIS)

Tseng, T.-K.; Wu, J.-M.

2005-01-01

Conductive perovskite BaPbO 3 (BPO) films have been prepared successfully by chemical solution deposition method through spin-coating on Pt/Ti/SiO 2 /Si substrates. The choice of baking temperature is a key factor on the development of conducting BPO perovskite phase. When the baking temperature is higher than 350 deg. C, the BPO films contain a high content of BaCO 3 phase after annealing at temperatures higher than 500 deg. C. If the baking temperature is chosen lower than 300 deg. C, such as 200 deg. C, the annealed BPO films consist mostly of perovskite with only traces of BaCO 3 . Choosing 200 deg. C as the baking temperature, the BPO films developed single perovskite phase at temperatures as low as 550 deg. C. The perovskite BPO phase is stable in the range of 550-650 deg. C and the measured sheet resistance of the BPO films is about 2-3 Ω/square. The perovskite BPO film as a buffer layer provides improvement in electric properties of lead zirconate titanate films

Persistent optically induced magnetism in oxygen-deficient strontium titanate.

Science.gov (United States)

Rice, W D; Ambwani, P; Bombeck, M; Thompson, J D; Haugstad, G; Leighton, C; Crooker, S A

2014-05-01

Strontium titanate (SrTiO3) is a foundational material in the emerging field of complex oxide electronics. Although its bulk electronic and optical properties are rich and have been studied for decades, SrTiO3 has recently become a renewed focus of materials research catalysed in part by the discovery of superconductivity and magnetism at interfaces between SrTiO3 and other non-magnetic oxides. Here we illustrate a new aspect to the phenomenology of magnetism in SrTiO3 by reporting the observation of an optically induced and persistent magnetization in slightly oxygen-deficient bulk SrTiO3-δ crystals using magnetic circular dichroism (MCD) spectroscopy and SQUID magnetometry. This zero-field magnetization appears below ~18 K, persists for hours below 10 K, and is tunable by means of the polarization and wavelength of sub-bandgap (400-500 nm) light. These effects occur only in crystals containing oxygen vacancies, revealing a detailed interplay between magnetism, lattice defects, and light in an archetypal complex oxide material.

Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

Science.gov (United States)

Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

2018-03-01

Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

Lanthanoid titanate film structure deposited at different temperatures in vacuum

International Nuclear Information System (INIS)

Kushkov, V.D.; Zaslavskij, A.M.; Mel'nikov, A.V.; Zverlin, A.V.; Slivinskaya, A.Eh.

1991-01-01

Influence of deposition temperature on the structure of lanthanoid titanate films, prepared by the method of high-rate vacuum condensation. It is shown that formation of crystal structure, close to equilibrium samples, proceeds at 1100-1300 deg C deposition temperatures. Increase of temperature in this range promotes formation of films with higher degree of structural perfection. Amorphous films of lanthanoid titanates form at 200-1000 deg C. Deposition temperature shouldn't exceed 1400 deg C to prevent the formation of perovskite like phases in films

Growth and characterization of textured YBaCo2O5+δ thin films grown on (001)-SrTiO3 via DC magnetron sputtering

International Nuclear Information System (INIS)

Galeano, V.; Arnache, O.; Supelano, I.; Vargas, C.A. Parra; Morán, O.

2016-01-01

Thin films of the layered cobaltite YBaCo 2 O 5+δ were successfully grown on (001)-oriented SrTiO 3 single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo 2 O 5+δ thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo 2 O 5+δ , the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo 2 O 5+δ thin films are grown on SrTiO 3 substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

Electronic properties and surface reactivity of SrO-terminated SrTiO3 and SrO-terminated iron-doped SrTiO3.

Science.gov (United States)

Staykov, Aleksandar; Tellez, Helena; Druce, John; Wu, Ji; Ishihara, Tatsumi; Kilner, John

2018-01-01

Surface reactivity and near-surface electronic properties of SrO-terminated SrTiO 3 and iron doped SrTiO 3 were studied with first principle methods. We have investigated the density of states (DOS) of bulk SrTiO 3 and compared it to DOS of iron-doped SrTiO 3 with different oxidation states of iron corresponding to varying oxygen vacancy content within the bulk material. The obtained bulk DOS was compared to near-surface DOS, i.e. surface states, for both SrO-terminated surface of SrTiO 3 and iron-doped SrTiO 3 . Electron density plots and electron density distribution through the entire slab models were investigated in order to understand the origin of surface electrons that can participate in oxygen reduction reaction. Furthermore, we have compared oxygen reduction reactions at elevated temperatures for SrO surfaces with and without oxygen vacancies. Our calculations demonstrate that the conduction band, which is formed mainly by the d-states of Ti, and Fe-induced states within the band gap of SrTiO 3 , are accessible only on TiO 2 terminated SrTiO 3 surface while the SrO-terminated surface introduces a tunneling barrier for the electrons populating the conductance band. First principle molecular dynamics demonstrated that at elevated temperatures the surface oxygen vacancies are essential for the oxygen reduction reaction.

Domain structure and magnetic properties of epitaxial SrRuO sub 3 films grown on SrTiO sub 3 (100) substrates by ion beam sputtering

CERN Document Server

Oh, S H

2000-01-01

The domain structure of epitaxial SrRuO sub 3 thin films grown on SrTiO sub 3 (100) substrates by using ion beam sputtering has been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). The SrRuO sub 3 films grown in the present study revealed a unique cube-on-cube epitaxial relationship, i.e., (100) sub S sub R sub O ll (100) sub S sub T sub O , [010] sub S sub R sub O ll [101] sub S sub T sub O , prevailing with a cubic single-domain structure. The cubic SrRuO sub 3 thin films that were inherently with free from RuO sub 6 octahedron tilting exhibited higher resistivity with suppressed magnetic properties. The Curie temperature of the thin films was suppressed by 60 K from 160 K for the bulk specimen, and the saturation magnetic moment was reduced by a significant amount. The tetragonal distortion of the SrRuO sub 3 thin films due to coherent growth with the substrate seemed to result in a strong magnetic anisotropy.

Resistive switching phenomena of extended defects in Nb-doped SrTiO3 under influence of external gradients

International Nuclear Information System (INIS)

Rodenbuecher, Christian

2014-01-01

Redox-based memristive materials have attracted much attention in the last decade owing to their ability to change the resistance upon application of an electric field making them promising candidates for future non-volatile memories. However, a fundamental understanding of the nature of the resistive switching effect, which is indispensable for designing future technological applications,is still lacking. As a prototype material of a memristive oxide, strontium titanate (SrTiO 3 ) has been investigated intensively and it was revealed that the valence change of a Ti ''d'' electron plays an important role during resistive switching related to insulator-to-metal transition. Such a transition can be induced by electrical gradients, by chemical gradients, by a combination of these gradients or by donor doping. Hence, SrTiO 3 doped with the donor Nb should have metallic properties and is used commonly as a conducting substrate for the growth of functional oxide thin films. Nevertheless,the resistive switching effect has also be observed in Nb-doped SrTiO 3 . This paradoxical situation offers a unique opportunity to gain an insight into the processes during the insulator-to metal transition. In this thesis, a comprehensive study of the influence of external gradients on SrTiO 3 :Nb single crystals is presented. The focus is especially set on the investigation of the crystallographic structure, the chemical composition, the electronic structure, the lattice dynamics and the electronic transport phenomena using surface-sensitive methods on the macro- and nanoscale. On the as-received epi-polished single crystals, the evolution of a surface layer having a slight excess of strontium and - in contrast to the bulk of the material - semiconducting properties are observed. Hence, the key for understanding of the resistive switching effect is the knowledge of the nature of the surface layer. On the basis of systematic studies of the influence of external

P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

Science.gov (United States)

Man, Hamdi

Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of

Structural and optical investigations of sol–gel derived lithium titanate thin films

International Nuclear Information System (INIS)

Łapiński, M.; Kościelska, B.; Sadowski, W.

2012-01-01

Highlights: ► Lithium titanate thin films were deposited on glass substrates by sol–gel method. ► After annealing at 550 °C samples had lithium titanate spinel structure. ► Above 80 h of annealing mixture of lithium titanate and titanium oxides was appeared. ► Optical transmittance decreased with increasing of annealing time. - Abstract: In this paper structural and optical studies of lithium titanate (LTO) thin films are presented. Nanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible lithium titanate phase was obtained after 20 h annealing. Increasing of annealing time over 20 h revealed appearance of titanium oxides phase. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength with increasing of annealing time. The optical band gap was calculated for direct allowed and indirect allowed transitions from optical absorption spectra.

Octahedral rotations in strained LaAlO3/SrTiO3 (001 heterostructures

Directory of Open Access Journals (Sweden)

T. T. Fister

2014-02-01

Full Text Available Many complex oxides display an array of structural instabilities often tied to altered electronic behavior. For oxide heterostructures, several different interfacial effects can dramatically change the nature of these instabilities. Here, we investigate LaAlO3/SrTiO3 (001 heterostructures using synchrotron x-ray scattering. We find that when cooling from high temperature, LaAlO3 transforms from the Pm3¯m to the Imma phase due to strain. Furthermore, the first 4 unit cells of the film adjacent to the substrate exhibit a gradient in rotation angle that can couple with polar displacements in films thinner than that necessary for 2D electron gas formation.

Strain-mediated magnetic and transport properties of epitaxial LuxFe3-xO4 films

Science.gov (United States)

Wang, P.; Jin, C.; Zheng, D. X.; Bai, H. L.

2015-10-01

Strain mediated structure, magnetic, and transport properties of spinel ferrites were investigated by growing epitaxial LuxFe3-xO4 (LFO, 0 ≤ x ≤ 0.26 ) films on SrTiO3 and MgO substrates with in-plane compressive and tensile strains, respectively. The lattice parameter of LFO films decreases on SrTiO3 substrates, while increases on MgO substrates with the increasing Lu content. The LFO films on SrTiO3 substrates exhibit larger saturation magnetization and smaller exchange bias and coercive field. Phase shift of anisotropic magnetoresistance is also observed in the LFO films on SrTiO3 substrates. In addition, the nonmagnetic Lu3+ ions in spinel ferrites enhance the spin canting, which further increases the exchange bias and coercive field and strengthens the four-fold symmetry of anisotropic magnetoresistance and the two-fold symmetry of planar Hall effect.

Near Infrared Lateral Photovoltaic Effect in LaTiO3 Films

Directory of Open Access Journals (Sweden)

Wujun Jin

2013-01-01

Full Text Available We have reported on the lateral photovoltaic effect of LaTiO3 films epitaxially grown on (100 SrTiO3 substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3 film through SrTiO3 substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3 films give rise to a potentially photoelectronic device for near infrared position-sensitive detection.

Structural and functional properties of La1-xBaxMnO3 thin films on SrTiO3

International Nuclear Information System (INIS)

Belenchuk, A.; Kantser, V.; Shapoval, O.; Zasavitsky, E.; Moshnyaga, V.

2011-01-01

Full text: Colossal magneto resistive manganites such as La 1-x Ba x MnO3 (LBMO) show a reach diversity of a attractive physical properties and the epitaxy of manganites has figured conspicuously in the search for new generations of electronic materials for information processing, data storage, and sensing. All applications require manganite films with a smooth morphology and perfect functional properties such as a large magnetization and a small residual resistivity. We investigated the structural and functional properties of the epitaxial LBMO thin films grown on the near perfect matched SrTiO 3 substrates by metalorganic aerosol deposition technique. AFM surface analysis shows a very smooth films surface indicating the layer-by-layer growth mode. The occurrence of a distinct Laue thickness fringes in X-ray diffraction spectra indicates a high quality single-crystalline growth of an uniformly strained LBMO films. But the small-angle x-ray scattering reveals the presence of a few unit cells intermediate layer with a modified electronic density. Transport measurements determine a high metal-insulator transition temperature (T MI >340 K) confirming near optimal Ba doping of LBMO with the residual resistivity of 350 μΩcm at 50 K. According to the inductive coupled plasma emission spectroscopy analysis the LBMO has level of Ba doping x=0.32. However, SQUID magnetization measurements reveal the coexistence of a high Curie temperature (T C =335 K) and a low coercitive field (27-30 Oe) with a reduced saturation magnetization (∼3 μ B /Mn) and broadened para-ferromagnetic transition. The presence of magnetic phase inhomogeneity can be further revealed from the form of low-temperature magnetization loops. We discuss the results within the concept of a 'hidden' magnetic layer situated close to the film-substrate interface and the presence of magnetic phase separation phenomenon in the main part of the LBMO film. (authors)

Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001 with tunable Fermi levels

Directory of Open Access Journals (Sweden)

Hua Guo

2014-05-01

Full Text Available In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1 thin films grown by molecular beam epitaxy on SrTiO3(001. Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES. ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3 thin films with different compliance currents

International Nuclear Information System (INIS)

Tang, M H; Wang, Z P; Zeng, Z Q; Xu, X L; Wang, G Y; Zhang, L B; Xiao, Y G; Yang, S B; Jiang, B; Li, J C; He, J

2011-01-01

The SrTiO 3 (STO) thin films on a Pt/Ti/SiO 2 /Si substrate were synthesized using a sol–gel method to form a metal–insulator–metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current I cc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films

Characteristics of (Ti,Ta)N thin films prepared by using pulsed high energy density plasma

Energy Technology Data Exchange (ETDEWEB)

Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Li Li [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Lv Guohua [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang Xianhui [College of Science, Changchun University of Science and Technology, Changchun 130022, Jilin Province (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

2007-07-21

(Ti,Ta)N films were prepared by pulsed high energy density plasma (PHEDP) from a coaxial gun in N{sub 2} gas. The coaxial gun is composed of a tantalum inner electrode and a titanium outer one. Material characteristics of the (Ti,Ta)N film were investigated by x-ray photoelectron spectroscopy and x-ray diffraction. The microstructure of the film was observed by a scanning electron microscope. The elemental composition and the interface of the film/substrate were analysed using Auger electron spectrometry. Our results suggest that the binary metal nitride film (Ti,Ta)N, can be prepared by PHEDP. It also shows that dense nanocrystalline (Ti,Ta)N film can be achieved.

Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

KAUST Repository

Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, Mohamed N.; Alshareef, Husam N.

2012-01-01

A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectricproperties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

KAUST Repository

Sarath Kumar, S. R.

2012-12-03

A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectricproperties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

Visible light carrier generation in co-doped epitaxial titanate films

Energy Technology Data Exchange (ETDEWEB)

Comes, Ryan B., E-mail: ryan.comes@pnnl.gov; Kaspar, Tiffany C.; Chambers, Scott A. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States); Smolin, Sergey Y.; Baxter, Jason B. [Department of Chemical and Biological Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Gao, Ran [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Apgar, Brent A. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Champaign, Illinois 61801 (United States); Martin, Lane W. [Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720 (United States); Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Bowden, Mark E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States)

2015-03-02

Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O3 films grown on Si and SrTiO3 substrates

Science.gov (United States)

Okamoto, Shoji; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

2016-10-01

{100}-oriented Pb(Zr x ,Ti1- x )O3 (PZT) thin films of approximately 2 µm thickness and Zr/(Zr + Ti) ratios of 0.39-0.65 were epitaxially grown on (100)cSrRuO3//(100)SrTiO3 (STO) and (100)cSrRuO3//(100)cLaNiO3//(100)CeO2//(100)YSZ//(100)Si (Si) substrates having different thermal expansion coefficients by pulsed metal-organic chemical vapor deposition (MOCVD). The effects of Zr/(Zr + Ti) ratio and type of substrate on the crystal structure and dielectric, ferroelectric and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that both films changed from having a tetragonal symmetry to rhombohedral symmetry through the coexisting region with increasing Zr/(Zr + Ti) ratio. This region showed the Zr/(Zr + Ti) ratios of 0.45-0.59 for the films on the STO substrates that were wider than the films on the Si substrates. Saturation polarization values were minimum at approximately Zr/(Zr + Ti) = 0.50 for the films on the STO substrates, and no obvious Zr/(Zr + Ti) ratio dependence was detected in the films on the Si substrates. On the other hand, the maximum field-induced strain values measured by scanning force microscopy at approximately Zr/(Zr + Ti) = 0.50 at 100 kV/cm were about 0.5 and 0.1% in the films on the Si and STO, respectively.

Appearance and disappearance of ferromagnetism in ultrathin LaMnO3 on SrTiO3 substrate: A viewpoint from first principles

Science.gov (United States)

An, Ming; Weng, Yakui; Zhang, Huimin; Zhang, Jun-Jie; Zhang, Yang; Dong, Shuai

2017-12-01

The intrinsic magnetic state (ferromagnetic or antiferromagnetic) of ultrathin LaMnO3 films on the most commonly used SrTiO3 substrate is a long-existing question under debate. Either strain effect or nonstoichiometry was argued to be responsible for the experimental ferromagnetism. In a recent experiment [X. R. Wang, C. J. Li, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, N. Poccia, A. Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando, and H. Hilgenkamp, Science 349, 716 (2015), 10.1126/science.aaa5198], one more mechanism, namely, the self-doping due to polar discontinuity, was argued to be the driving force of ferromagnetism beyond the critical thickness. Here systematic first-principles calculations have been performed to check these mechanisms in ultrathin LaMnO3 films as well as superlattices. Starting from the very precise descriptions of both LaMnO3 and SrTiO3, it is found that the compressive strain is the dominant force for the appearance of ferromagnetism, while the open surface with oxygen vacancies leads to the suppression of ferromagnetism. Within LaMnO3 layers, the charge reconstructions involve many competitive factors and certainly go beyond the intuitive polar catastrophe model established for LaAlO3/SrTiO3 heterostructures. Our paper not only explains the long-term puzzle regarding the magnetism of ultrathin LaMnO3 films but also sheds light on how to overcome the notorious magnetic dead layer in ultrathin manganites.

Crystal structure of red lead titanate thin films

International Nuclear Information System (INIS)

Bursill, L.A.; Peng, J.L.; Jiang, B.; Li, X.

1998-01-01

Orange-red lead titanate thin films are examined by high-resolution transmission electron microscopy and diffraction. It is remarkable that the structure is based on that of tetragonal-tungsten-bronze (TTB) rather than perovskite-type. The chemical basis for this result is examined. It is deduced that the TTB structure is stabilized by inclusion of hydroxyl ions during synthesis by a sol-gel route involving hydrolysis of n-Butyl titanate

Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes

Science.gov (United States)

Ahmed, Moinuddin; Butler, Donald P.

2015-07-01

Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.

Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

Science.gov (United States)

Abazari, M.; Akdoǧan, E. K.; Safari, A.

2008-05-01

We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

Synthesis of BaTiO3 and SrTiO3 by microwave assisted hydrothermal method (MAH) using anatase as titanium precursor

International Nuclear Information System (INIS)

Magalhães, Renata da Silva; Macedo Junior, Wagner Dias; Souza, Agda Eunice de; Teixeira, Silvio Rainho; Li, Maximo Siu; Longo, Elson

2016-01-01

Full text: Strontium and barium titanates (SrTiO 3 (ST) and BaTiO 3 (BT)) in their crystalline form belong to the perovskite (ABO 3 ) class. Both display a semiconductor behavior with many interesting properties. The method of synthesis employed and different precursors may influence the morphology and properties of ceramic materials [1,2]. Barium (BT) and strontium (St) titanates were produced using the Microwave Assisted Hydrothermal Method (MAH), different concentrations (1,3 and 6 molL -1 ) of mineralizer (KOH) and a different titanium precursor: a complex anatase-hydrogen peroxide. Barium and strontium chloride were used as the other metal precursors. The resulting material were characterized by different techniques such as: X-ray diffraction (XRD), Micro-Raman Spectroscopy (MR), UV-Vis, Scanning Electron microscopy (SEM) and finally their photoluminescent emissions (FL) were recorded at room temperature. The results show that there were differences in crystallinity, morphology, number of formed phases and photoluminescent emission, among the titanate produced with different concentrations of mineralizer. References: [1] A.E. Souza et al., Order–disorder degree of self-assembled clusters: Influence on photoluminescence emission and morphology of Ba x Sr 1-x TiO 3 nanocrystals, Chemical Physics Letters 514 (2011) 301–306. [2] T. M. Mazzo et al., Influence of titanium precursor on photoluminescent emission of micro-cube-shaped CaTiO 3 , Journal of Luminescence 165 (2015). (author)

Octahedral tilt independent magnetism in confined GdTiO3 films

Science.gov (United States)

Need, R. F.; Isaac, B. J.; Kirby, B. J.; Borchers, J. A.; Stemmer, S.; Wilson, Stephen D.

2018-03-01

Low temperature polarized neutron reflectometry measurements are presented, exploring the evolution of ferrimagnetism in thin GdTiO3 films embedded within a SrTiO3 matrix. In GdTiO3 films thinner than ˜4 nm, the TiO6 octahedral tilts endemic to GdTiO3 coherently relax toward the undistorted, cubic phase of SrTiO3. Our measurements indicate that the ferrimagnetic state within the GdTiO3 layers survives as these TiO6 octahedral tilts are suppressed. Furthermore, our data suggest that layers of suppressed magnetization (i.e., magnetic dead layers) develop within the GdTiO3 layer at each GdTiO3/SrTiO3 interface and explain the apparent magnetization suppression observed in thin GdTiO3 films when using volume-averaged techniques. Our data show that the low temperature magnetic moment inherent to the core GdTiO3 layers is only weakly impacted as the octahedral tilt angles are suppressed by more than 50% and the t2 g bandwidth is dramatically renormalized.

Quantitative analysis of UV excitation bands for red emissions in Pr3+-doped CaTiO3, SrTiO3 and BaTiO3 phosphors by peak fitting

International Nuclear Information System (INIS)

Fujiwara, Rei; Sano, Hiroyuki; Shimizu, Mikio; Kuwabara, Makoto

2009-01-01

A quantitative spectral analysis of the ultraviolet (UV) broad excitation bands, which are located in the range 300-400 nm, for red emissions at around 610 nm in Pr-doped CaTiO 3 , SrTiO 3 :Al and BaTiO 3 :Mg phosphors has been carried out using a peak fitting technique. The obtained results demonstrate that the UV broad band of CaTiO 3 :Pr consists of four primary excitation bands centered around 330, 335, 365 and 380 nm and those of both SrTiO 3 :Al and BaTiO 3 :Mg consist of three primary bands centered around 310, 345 and 370 nm. Based on the behavior patterns and the values of the respective primary excitation bands' parameters, i.e. center gravity (λ top ), maximum height (I max ) and full-width at half-maximum (FWHM), the UV-to-red relaxation processes in these titanate phosphors can be explained to be essentially the same, except for the existence of an additional relaxation pathway via electron-trap states in CaTiO 3 :Pr, which gives a characteristic shape of its UV excitation spectrum in the wavelength range of >360 nm

Imaging and tuning polarity at SrTiO3 domain walls

Science.gov (United States)

Frenkel, Yiftach; Haham, Noam; Shperber, Yishai; Bell, Christopher; Xie, Yanwu; Chen, Zhuoyu; Hikita, Yasuyuki; Hwang, Harold Y.; Salje, Ekhard K. H.; Kalisky, Beena

2017-12-01

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.

Crystal structure of red lead titanate thin films

Energy Technology Data Exchange (ETDEWEB)

Bursill, L.A.; Peng, J.L.; Jiang, B. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Li, X. [Jilin Univ., Changchun, JL (China). Dept of Chemistry

1998-09-01

Orange-red lead titanate thin films are examined by high-resolution transmission electron microscopy and diffraction. It is remarkable that the structure is based on that of tetragonal-tungsten-bronze (TTB) rather than perovskite-type. The chemical basis for this result is examined. It is deduced that the TTB structure is stabilized by inclusion of hydroxyl ions during synthesis by a sol-gel route involving hydrolysis of n-Butyl titanate 7 refs., 1 tab., 4 figs.

High Ic, YBa2Cu3O7-x films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO3 buffers

International Nuclear Information System (INIS)

Kursumovic, A; Durrell, J H; Harrington, S; Wimbush, S; MacManus-Driscoll, J L; Maiorov, B; Zhou, H; Stan, L; Holesinger, T G; Wang, H

2009-01-01

YBa 2 Cu 3 O 7-x (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO 3 (STO) substrates. In the presence of a 100 nm thick, 5 mol% Au-doped STO buffer, self-field critical current densities, J c sf , at 77 K of ∼2.4 MA cm -2 and critical currents, I c sf , up to 700 A (cm-width) -1 were achieved. The J c value is virtually independent of thickness and the growth rates are very high (∼1 μm min -1 ). From transmission electron microscopy (TEM), Y 2 O 3 nanocloud extended defects (∼100 nm in size) were identified as the pinning defects in the films. Enhanced random pinning was induced by the presence of Au in the buffer.

Physics of SrTiO3-based heterostructures and nanostructures: a review.

Science.gov (United States)

Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

2017-08-30

1 Overview 1 1.1 Introduction 1 1.1.1 Oxide growth techniques are rooted in search for high-Tc superconductors 2 1.1.2 First reports of interface conductivity 2 1.2 2D physics 2 1.3 Emergent properties of oxide heterostructures and nanostructures 3 1.4 Outline 3 2 Relevant properties of SrTiO3 3 2.1 Structural properties and transitions 3 2.2 Ferroelectricity, Paraelectricity and Quantum Paraelectricity 4 2.3 Electronic structure 5 2.4 Defects 6 2.4.1 Oxygen vacancies 6 2.4.2 Terraces 7 2.5 Superconductivity 7 3 SrTiO3-based heterostructures and nanostructures 8 3.1 Varieties of heterostructures 8 3.1.1 SrTiO3 only 9 3.1.2 LaAlO3/SrTiO3 9 3.1.3 Other heterostructures formed with SrTiO3 10 3.2 Thin-film growth 10 3.2.1 Substrates 10 3.2.2 SrTiO3 surface treatment 11 3.2.3 Pulsed Laser Deposition 11 3.2.4 Atomic Layer Deposition 13 3.2.5 Molecular Beam Epitaxy 14 3.2.6 Sputtering 15 3.3 Device Fabrication 15 3.3.1 "Conventional" photolithography - Thickness Modulation, hard masks, etc. 15 3.3.2 Ion beam irradiation 16 3.3.3 Conductive-AFM lithography 16 4 Properties and phase diagram of LaAlO3/SrTiO3 16 4.1 Insulating state 16 4.2 Conducting state 17 4.2.1 Confinement thickness (the depth profile of the 2DEG) 17 4.3 Metal-insulator transition and critical thickness 18 4.3.1 Polar catastrophe ( electronic reconstruction) 18 4.3.2 Oxygen Vacancies 19 4.3.3 Interdiffusion 20 4.3.4 Polar Interdiffusion + oxygen vacancies + antisite pairs 20 4.3.5 Role of surface adsorbates 21 4.3.6 Hidden FE like distortion - Strain induced instability 21 4.4 Structural properties and transitions 21 4.5 Electronic band structure 22 4.5.1 Theory 22 4.5.2 Experiment 23 4.5.3 Lifshitz transition 24 4.6 Defects, doping, and compensation 25 4.7 Magnetism 25 4.7.1 Experimental evidence 25 4.7.2 Two types of magnetism 27 4.7.3 Ferromagnetism 27 4.7.4 Metamagnetism 28 4.8 Superconductivity 28 4.9 Optical properties 29 4.9.1 Photoluminesce

Solution processing of YBa2Cu3O7-x thin films

International Nuclear Information System (INIS)

Singhal, A.; Paranthaman, M.; Specht, E.D.; Hunt, R.D.; Beach, D.B.; Martin, P.M.; Lee, D.F.

1997-12-01

The aim of this work was to develop a non-vacuum chemical deposition technique for YBa 2 Cu 3 O 7-x (YBCO) coated conductors on rolling-assisted biaxially textured substrates (RABiTS). The authors have chosen the metal-organic decomposition (MOD) and sol-gel precursor routes to grow textured YBCO films. In the MOD process, yttrium 2-ethylhexonate, barium neodecanoate, copper 2-ethylhexonate and toluene were used as the starting reagents. YBCO films processed by the MOD method on SrTiO 3 (100) single crystal substrates were consisted of c and a-axis oriented materials. These films also contained some amount of the random phase. The c and a-axis oriented materials were epitaxial on SrTiO 3 substrates. Films have a T c,onset of 89K and the best superconducting transition temperature of 63K. Films pyrolyzed at 525 C and subsequently annealed at 780 C in a p(O 2 ) of 3.5 x 10 -4 atm contained YBCO phase predominantly in a-axis orientation. In the sol-gel route, yttrium-isopropoxide, barium metal, copper methoxide and 2-methoxyethanol were used as the starting reagents. Sol-gel YBCO films on SrTiO 3 substrates were epitaxial and c-axis oriented

Titanate nanotube thin films with enhanced thermal stability and high-transparency prepared from additive-free sols

Energy Technology Data Exchange (ETDEWEB)

Koroesi, Laszlo, E-mail: korosi@enviroinvest.hu [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertvaros utca 2, H-7632 Pecs (Hungary); Papp, Szilvia [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertvaros utca 2, H-7632 Pecs (Hungary); Hornok, Viktoria [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Oszko, Albert [Department of Physical Chemistry and Materials Science, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Petrik, Peter; Patko, Daniel; Horvath, Robert [Institute for Technical Physics and Materials Science MFA, Research Center for Natural Sciences, Konkoly-Thege ut 29-33, H-1121 Budapest (Hungary); Dekany, Imre [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary)

2012-08-15

Titanate nanotubes were synthesized from TiO{sub 2} in alkaline medium by a conventional hydrothermal method (150 Degree-Sign C, 4.7 bar). To obtain hydrogen titanates, the as-prepared sodium titanates were treated with either HCl or H{sub 3}PO{sub 4} aqueous solutions. A simple synthesis procedure was devised for stable titanate nanotube sols without using any additives. These highly stable ethanolic sols can readily be used to prepare transparent titanate nanotube thin films of high quality. The resulting samples were studied by X-ray diffraction, N{sub 2}-sorption measurements, Raman spectroscopy, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy and spectroscopic ellipsometry. The comparative results of using two kinds of acids shed light on the superior thermal stability of the H{sub 3}PO{sub 4}-treated titanate nanotubes (P-TNTs). X-ray photoelectron spectroscopy revealed that P-TNTs contains P in the near-surface region and the thermal stability was enhanced even at a low ({approx}0.5 at%) concentration of P. After calcination at 500 Degree-Sign C, the specific surface areas of the HCl- and H{sub 3}PO{sub 4}-treated samples were 153 and 244 m{sup 2} g{sup -1}, respectively. The effects of H{sub 3}PO{sub 4} treatment on the structure, morphology and porosity of titanate nanotubes are discussed. - Graphical Abstract: TEM picture (left) shows P-TNTs with diameters about 5-6 nm. Inset shows a stable titanate nanotube sol illuminated by a 532 nm laser beam. Due to the presence of the nanoparticles the way of the light is visible in the sol. Cross sectional SEM picture (right) as well as ellipsometry revealed the formation of optical quality P-TNT films with thicknesses below 50 nm. Highlights: Black-Right-Pointing-Pointer H{sub 3}PO{sub 4} treatment led to TNTs with high surface area even after calcination at 500 Degree-Sign C. Black-Right-Pointing-Pointer H{sub 3}PO{sub 4}-treated TNTs preserved their nanotube morphology up to 500

Ferroelectric properties of NaNbO3-BaTiO3 thin films deposited on SrRuO3/(001)SrTiO3 substrate by pulsed laser deposition

International Nuclear Information System (INIS)

Yamazoe, Seiji; Oda, Shinya; Sakurai, Hiroyuki; Wada, Takahiro; Adachi, Hideaki

2009-01-01

(NaNbO 3 ) 1-x (BaTiO 3 ) x (NN-xBT) thin films with low BaTiO 3 (BT) concentrations x (x=0.05 and 0.10) were fabricated on SrRuO 3 /(001)SrTiO 3 (SRO)/(001)STO) substrate by pulsed laser deposition (PLD). X-ray diffraction pattern (XRD) and transmission electron diffraction pattern (TED) showed that NN-0.10BT thin film was epitaxially grown on SRO/(001)STO substrate with a crystallographic relationship of [001] NN-xBT parallel [001] STO . From reciprocal space maps, the lattice parameters of the out-of-plane direction of NN-xBT thin films became larger with an increase in BT concentration, although the lattice parameter of the in-plane was hardly changed by the BT concentration. The value of relative dielectric constant ε r of the NN-xBT thin films were increased with BT concentration. The ε r and the dielectric loss tanδ of NN-0.10BT were 1220 and 0.02 at 1 kHz, respectively. The P-E hysteresis loops of the NN-xBT thin films showed clear ferroelectricity. Although the value of remanent polarization P r decreased with the BT concentration, the behaviors of ε r , P r , and coercive electric field E c of the NN-xBT thin films against the BT concentration accorded with those of NN-xBT ceramics, in which NN-0.10BT ceramics exhibited the largest piezoelectric property. Therefore, the NN-0.10BT thin film is expected to show high piezoelectricity. (author)

Integrated oxygen sensors based on Mg-doped SrTiO3 fabricated by screen-printing

DEFF Research Database (Denmark)

Zheng, H.; Toft Sørensen, O.

1998-01-01

This paper describes the fabrication and testing of Mg-doped SrTiO3 thick-film oxygen sensors with an integrated Pt heater. The results show that the sensor exhibits a PO2 dependence according to R proportional to PO2-1/4 in the considered PO2 range(2.5 x 10(-5) bar

Analysis of multiferroic properties in BiMnO3 thin films

International Nuclear Information System (INIS)

Grizalez, M; Mendoza, G A; Prieto, P

2009-01-01

Textured BiMnO 3 [111] thin films on SrTiO 3 (100) and Pt/TiO 2 /SiO 2 substrates were grown via r.f. magnetron sputtering (13.56 MHz). The XRD spectra confirmed a monoclinic structure and high-quality textured films for the BiMnO 3 films. The films grown on SrTiO 3 (100) showed higher crystalline quality than those developed on Pt/TiO 2 /SiO 2 . Through optimized oxygen pressure of 5x10 -2 mbar during the r.f. sputtering deposition, the crystalline orientation of the BiMnO 3 film was improved with respect to the previously reported value of 2x10 -1 mbar. The values of spontaneous polarization (P s ), remnant polarization (P r ), and coercive field (F c ) from ferroelectric hysteresis loops (P-E) at different temperatures were also obtained. Samples with higher crystalline order revealed better dielectric properties (high P s and P r values and a low F c ). For films on both types of substrates, the ferroelectric behavior was found to persist up to 400K. Measurements at higher temperatures were difficult to obtain given the increased conductivity of the films. Magnetic hysteresis loops from 5K to 120K were obtained for BiMnO 3 films grown on SrTiO 3 and Pt/TiO 2 /SiO 2 substrates. The results suggested that the coexistence of the magnetic and electric phases persists up to 120K.

Epitaxial growth of SrTiO3 (001) films on multilayer buffered GaN (0002) by pulsed laser deposition

International Nuclear Information System (INIS)

Luo, W B; Jing, J; Shuai, Y; Zhu, J; Zhang, W L; Zhou, S; Gemming, S; Du, N; Schmidt, H

2013-01-01

SrTiO 3 films were grown on CeO 2 /YSZ/TiO 2 multilayer buffered GaN/Al 2 O 3 (0001) substrates with and without the YBa 2 Cu 3 O 7-x (YBCO) bridge layer by pulsed laser deposition (PLD). The deposition process of the buffer layers was in situ monitored by reflection high-energy electron diffraction. The crystallographical orientation of the heterostructure was studied by x-ray diffraction (XRD). With the introduction of the YBCO (001) layer, the STO (001) film was epitaxially grown on the GaN substrate. There were three sets of inplane domains separated from each other by 30° in both STO and YBCO buffer layers. The epitaxial relationship was STO (002)[110]∥YBCO(001)[110]∥CeO 2 (002)[010]∥YSZ (002)[010]∥GaN(0001)[1 1 -2 0] according to XRD results. By comparing the orientation of STO grown on GaN with and without the YBCO top buffer layer, the surface chemical bonding was found to be a very important factor in determining the orientation relationship of STO.

Integrated oxygen sensors based on Mg-doped SrTiO3 fabricated by screen-printing

DEFF Research Database (Denmark)

Zheng, H.; Sørensen, Ole Toft

2000-01-01

This paper describes the fabrication and testing of Mg-doped SrTiO3 thick-film oxygen sensors with an integrated Pt heater. The results show that the sensor exhibits a P-o2 dependence according to R proportional to p(o2)(-1/4) in the considered P-o2 range(2.5 x 10(-5) bar

Preparation of YBa2Cu3O7-δ epitaxial thin films by pulsed ion-beam evaporation

International Nuclear Information System (INIS)

Sorasit, S.; Yoshida, G.; Suzuki, T.; Suematsu, H.; Jiang, W.; Yatsui, K.

2001-01-01

Thin films of YBa 2 Cu 3 O 7-δ (Y-123) grown epitaxially have been successfully deposited by ion-beam evaporation (IBE). The c-axis oriented YBa 2 Cu 3 O 7-δ thin films were successfully deposited on MgO and SrTiO 3 substrates. The Y-123 thin films which were prepared on the SrTiO 3 substrates were confirmed to be epitaxially grown, by X-ray diffraction analysis. The instantaneous deposition rate of the Y-123 thin films was estimated as high as 4 mm/s. (author)

Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

International Nuclear Information System (INIS)

Zapata-Navarro, A.; Marquez-Herrera, A.; Cruz-Jauregui, M.P.; Calzada, M.L.

2005-01-01

In this work, we present the variation of the ferroelectric properties of Ba 1-x Sr x TiO 3 films deposited on Pt/TiO 2 /SiO 2 /Si substrates by RF co-sputtering with 0≤x≤1. The co-sputtering was done using a single magnetron with BaTiO 3 /SrTiO 3 targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Analysis of SrTiO sub 3 step-flow growth by using RHEED

CERN Document Server

Nakagawa, N; Kawasaki, M; Ohashi, S; Koinuma, H

1999-01-01

SrTiO sub 3 homoepitaxial films were deposited by pulsed-laser deposition in a chamber equipped with a reflection high-energy electron-diffraction (RHEED) specular spot-intensity monitoring system. Changes in the substrate temperature or the excimer laser pulse rate gave rise to different behaviors of the RHEED specular intensity. At low temperatures and high pulse rates, ordinary RHEED oscillations were observed, indicating layer-by-layer growth. At very high temperatures and low pulse rates, the RHEED specular intensity was modulated synchronously with the excimer laser pulses, indicating that film growth proceeded in the step-flow mode. No Nb diffusion from the substrates into the homoepitaxial films was observed, even at the highest deposition temperatures, when Nb-doped STO substrates were used.

Phase transition in lead titanate thin films: a Brillouin study

International Nuclear Information System (INIS)

Kuzel, P; Dugautier, C; Moch, P; Marrec, F Le; Karkut, M G

2002-01-01

The elastic properties of both polycrystalline and epitaxial PbTiO 3 (PTO) thin films are studied using Brillouin scattering spectroscopy. The epitaxial PTO films were prepared by pulsed laser ablation on (1) a [0 0 1] single crystal of SrTiO 3 (STO) doped with Nb and (2) a [0 0 1] STO buffered with a layer of YBa 2 Cu 3 O 7 . The polycrystalline PTO films were prepared by sol-gel on a Si substrate buffered with TiO 2 and Pt layers. The data analysis takes into account the ripple and the elasto-optic contributions. The latter significantly affects the measured spectra since it gives rise to a Love mode in the p-s scattering geometry. At room temperature, the spectra of the epitaxially grown samples are interpreted using previously published elastic constants of PTO single crystals. Sol-gel samples exhibit appreciable softening of the effective elastic properties compared to PTO single crystals: this result is explained by taking into account the random orientation of the microscopic PTO grains. For both the polycrystalline and the epitaxial films we have determined that the piezoelectric terms do not contribute to the spectra. The temperature dependence of the spectra shows strong anomalies of the elastic properties near the ferroelectric phase transition. Compared to the bulk, T C is higher in the sol-gel films, while in the epitaxial films the sign of the T C shift depends on the underlying material

Interface properties of SrTiO3-based heterostructures studied by spectroscopy and high-resolution microscopy

International Nuclear Information System (INIS)

Pfaff, Florian Georg

2017-01-01

carrier concentration as well as the 2DES spatial extension can be observed for samples grown at very low oxygen pressures, which is related to the creation of oxygen vacancies in SrTiO 3 substrate. It is microscopically shown for the first time that sharp interfaces with a very low density of defects can also be grown at very low oxygen partial pressures. In addition, no significant effect of oxygen vacancies on specific structural properties is seen. Furthermore, a detailed analysis of the atomic spacing reveales a lattice distortion within the LaAlO 3 film which shows a significant dependence on the used growth parameters and, supported by density functional theory, points towards a complex interplay of electronic reconstruction, surface oxygen vacancies and lattice distortions as the driving mechanism for the 2DES formation. Beside the study of the structural properties of the interface in LaAlO 3 /SrTiO 3 heterostructures by means of transmission electron microscopy, the electronic structure of the 2DES is analyzed by resonant inelastic X-ray scattering (RIXS) measurements which show clear indications for localized charge carriers below the critical thickness for conductivity of four unit cells. Moreover, a Raman- and a fluorescence-like signal can be identified by excitation energy dependent RIXS and attributed to the electronic character of the intermediate state. Similar results are obtained on γ-Al 2 O 3 /SrTiO 3 heterostructures which fortifies this interpretation and could be a hint for a similar ground state in both heterostructures and interface magnetism also to be present in this system. By using resonant photoelectron spectroscopy the Ti 3d valence electrons can directly be observed and analyzed. Comparative measurements on LaAlO 3 /SrTiO 3 and γ-Al 2 O 3 /SrTiO 3 indicate the existence of different types of electronic states with Ti 3d character in both systems which can be attributed to mobile carriers forming the 2DES and carriers localized in states

Absence of traditional magnetoresistivity mechanisms in Sr2FeMoO6 thin films grown on SrTiO3, MgO and NdGaO3 substrates.

Science.gov (United States)

Saloaro, M; Majumdar, S; Huhtinen, H; Paturi, P

2012-09-12

Magnetoresistive double perovskite Sr(2)FeMoO(6) thin films were grown with two different deposition pressures on SrTiO(3), MgO and NdGaO(3) substrates by pulsed laser deposition and thorough structural, magnetic and magneto-transport characterization was made. According to x-ray diffraction, all the films were phase pure and fully textured. Indication of substrate dependent strain and low angle grain boundaries was found, especially in films on MgO. Both the deposition pressure and the choice of the substrate have a strong influence on the saturation magnetization, M(s), and Curie temperature, T(C). The structural and magnetic data indicate the presence of anti-site disorder (ASD) in the films. The temperature dependence of resistivity showed semiconductive behaviour at temperatures below 100 K and metallic behaviour at higher temperatures. The semiconductive behaviour was found to increase with increasing ASD. In good quality films, up to 12% negative magnetoresistance (MR) was observed and films grown on MgO and NGO substrates also showed low field MR. However, the most significant observation of this study was that the magnetoresistivity of these Sr(2)FeMoO(6) thin films could not be explained with any traditional MR mechanism, but carried the clear signature of superposition of different mechanisms, in particular low angle grain boundary tunnelling and suppression of antiferromagnetically ordered domains under a magnetic field.

Carrier density modulation by structural distortions at modified LaAlO3/SrTiO3 interfaces

International Nuclear Information System (INIS)

Schoofs, Frank; Vickers, Mary E; Egilmez, Mehmet; Fix, Thomas; Kleibeuker, Josée E; MacManus-Driscoll, Judith L; Blamire, Mark G; Carpenter, Michael A

2013-01-01

In order to study the fundamental conduction mechanism of LaAlO 3 /SrTiO 3 (LAO/STO) interfaces, heterostructures were modified with a single unit cell interface layer of either an isovalent titanate ATiO 3 (A = Ca, Sr, Sn, Ba) or a rare earth modified Sr 0.5 RE 0.5 TiO 3 (RE = La, Nd, Sm, Dy) between the LAO and the STO. A strong coupling between the lattice strain induced in the LAO layer by the interfacial layers and the sheet carrier density in the STO substrate is observed. The observed crystal distortion of the LAO is large and it is suggested that it couples into the sub-surface STO, causing oxygen octahedral rotation and deformation. We propose that the ‘structural reconstruction’ which occurs in the STO surface as a result of the stress in the LAO is the enabling trigger for two-dimensional conduction at the LAO/STO interface by locally changing the band structure and releasing trapped carriers. (paper)

Above room-temperature ferromagnetism in La1-xCaxMnO3 epitaxial thin films on SrTiO3(001) substrates

Science.gov (United States)

Kou, Yunfang; Wang, Hui; Miao, Tian; Wang, Yanmei; Xie, Lin; Wang, Shasha; Liu, Hao; Lin, Hanxuan; Zhu, Yinyan; Wang, Wenbin; Du, Haifeng; Pan, Xiaoqing; Wu, Ruqian; Yin, Lifeng; Shen, Jian

The colossal magnetoresistive (CMR) manganites are popular materials for spintronics applications due to their high spin polarization. Only a couple of manganites like La1-xSrxMnO3 have a Curie temperature (Tc) that is higher than room temperature. Finding methods to raise the Tc of manganites over room temperature is useful but challenging. In this work, we use the most intensively studied La1-xCaxMnO3 (LCMO) as the prototype system to demonstrate that Tc can be greatly enhanced by carefully tuning the electronic structure using doping and strain. Specifically, we grow LCMO films on SrTiO3 (001) substrates using pulsed laser deposition. Magnetic and transport measurements indicate a great enhancement of Tc over room temperature at x =0.2 doping. Theoretical calculations indicate that the combined effects from doping and strain give rise to a new electronic structure favoring ferromagnetism in LCMO system. Furthermore, using the La0.8Ca0.2MnO3 as ferromagnetic electrodes, we achieve finite tunneling magnetoresistance (TMR) above room temperature.

Preferential Creation of Polar Translational Boundaries by Interface Engineering in Antiferroelectric PbZrO3 Thin Films

OpenAIRE

Wei XK; Vaideeswaran K; Sandu CS; Jia CL; Setter N

2015-01-01

Polar translational boundaries (PTBs) are preferentially created in antiferroelectric PbZrO3 films through interfacial engineering. Probe corrected scanning transmission electron microscopy studies reveal that RIII 1 and RI 1 type PTBs are favorably created in PbZrO3/BaZrO3/SrTiO3 and PbZrO3/SrTiO3 films respectively. The relationship between interfacial strain and the internal strain of boundaries is the driving force for the selective formation of PTBs.

Thickness dependence of microstructures in La0.9Sr0.1MnO3 thin films grown on exact-cut and miscut SrTiO3 substrates

International Nuclear Information System (INIS)

Zhang Hongdi; An Yukai; Mai Zhenhong; Lu Huibin; Zhao Kun; Pan Guoqiang; Li Ruipeng; Fan Rong

2008-01-01

The thickness dependence of microstructures of La 0.9 Sr 0.1 MnO 3 (LSMO) thin films grown on exact-cut and miscut SrTiO 3 (STO) substrates, respectively, was investigated by high-angle X-ray diffraction (HXRD), X-ray small-angle reflection (XSAR), X-ray reciprocal space mapping and atomic force microscopy (AFM). Results show that the LSMO films are in pseudocubic structure and are highly epitaxial [0 0 1]-oriented growth on the (0 0 1) STO substrates. The crystalline quality of the LSMO film is improved with thickness. The epitaxial relationship between the LSMO films and the STO substrates is [0 0 1] LSMO -parallel [0 0 1] EXACT-STO , and the LSMO films have a slight mosaic structure along the q x direction for the samples grown on the exact-cut STO substrates. However, an oriented angle of about 0.24 deg. exists between [0 0 1] LSMO and [0 0 1] MISCUT-STO , and the LSMO films have a mosaic structure along the q z direction for that grown on the miscut STO substrates. The mosaic structure of both groups of the samples tends to reduce with thickness. The diffraction intensity of the (0 0 4) peaks increases with thickness of the LSMO film. The XSAR and AFM observations show that for both groups, the interface is sharp and the surface is rather smooth. The mechanism was discussed briefly

YBa2Cu3O7 films prepared by aerosol MOCVD

International Nuclear Information System (INIS)

Weiss, F.; Froehlich, K.; Haase, R.; Labeau, M.; Selbmann, D.; Senateur, J.P.; Thomas, O.

1993-01-01

In the present study we report on properties of YBa 2 Cu 3 O 7 films prepared by aerosol MOCVD. We give a short description of the process and we focus on the superconducting and related properties of the films deposited on SrTiO 3 , LaAlO 3 and NdGaO 3 single crystalline substrates. (orig.)

Evolution of the SrTiO3/MoO3 interface electronic structure: An in situ photoelectron spectroscopy study

KAUST Repository

Du, Yuanmin; Peng, Haiyang; Mao, Hongying; Jin, Kexin; Wang, Hong; Li, Feng; Gao, Xingyu; Chen, Wei; Wu, Tao

2015-01-01

Modifying the surface energetics, particularly the work function, of advanced materials is of critical importance for a wide range of surface- and interface-based devices. In this work, using in situ photoelectron spectroscopy, we investigated the evolution of electronic structure at the SrTiO3 surface during the growth of ultrathin MoO3 layers. Thanks to the large work function difference between SrTiO3 and MoO3, the energy band alignment on the SrTiO3 surface is significantly modified. The charge transfer and dipole formation at the SrTiO3/MoO3 interface leads to a large modulation of work function and an apparent doping in SrTiO3. The measured evolution of electronic structure and upward band bending suggest that the growth of ultrathin MoO3 layers is a powerful tool to modulate the surface energetics of SrTiO3, and this surface-engineering approach could be generalized to other functional oxides.

Evolution of the SrTiO3/MoO3 interface electronic structure: An in situ photoelectron spectroscopy study

KAUST Repository

Du, Yuanmin

2015-05-12

Modifying the surface energetics, particularly the work function, of advanced materials is of critical importance for a wide range of surface- and interface-based devices. In this work, using in situ photoelectron spectroscopy, we investigated the evolution of electronic structure at the SrTiO3 surface during the growth of ultrathin MoO3 layers. Thanks to the large work function difference between SrTiO3 and MoO3, the energy band alignment on the SrTiO3 surface is significantly modified. The charge transfer and dipole formation at the SrTiO3/MoO3 interface leads to a large modulation of work function and an apparent doping in SrTiO3. The measured evolution of electronic structure and upward band bending suggest that the growth of ultrathin MoO3 layers is a powerful tool to modulate the surface energetics of SrTiO3, and this surface-engineering approach could be generalized to other functional oxides.

Microstructure and electric characteristics of AETiO3 (AE=Mg, Ca, Sr doped CaCu3Ti4O12 thin films prepared by the sol–gel method

Directory of Open Access Journals (Sweden)

Dong Xu

2015-10-01

Full Text Available This paper focuses on the effects of alkline-earth metal titante AETiO3 (AE=Mg, Ca, Sr doping on the microstructure and electric characteristics of CaCu3Ti4O12 thin films prepared by the sol–gel method. The results showed that the grain size of CCTO thin films could be increased by MgTiO3 doping. The movement of the grain boundaries was impeded by the second phases of CaTiO3 and SrTiO3 concentrating at grain boundaries in CaTiO3 and SrTiO3 doped CCTO thin films. Rapid ascent of dielectric constant could be observed in 0.1Mg TiO3 doped CCTO thin films, which was almost as three times high as pure CCTO thin film and the descent of the dielectric loss at low frequency could also be observed. In addition, the nonlinear coefficient (α, threshold voltage (VT and leakage current (IL of AETiO3 doped CCTO thin films (AE=Mg, Ca, Sr showed different variation with the increasing content of the MgTiO3, CaTiO3 and SrTiO3.

Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

KAUST Repository

Yang, Yang

2014-11-01

Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences. The symmetries of the fundamental Raman modes in 50-700 cm-1 were identified based on group theory. The symmetries of the high order Raman modes in 900-1500 cm-1 of BiFeO3 are determined for the first time, which can provide strong clarifications to the symmetry of the fundamental peaks in 400-700 cm-1 in return. Moreover, the lattice structures of BiFeO3 films are identified consequently on the basis of Raman spectroscopy. BiFeO3 films on SrRuO3 coated SrTiO3 (0 0 1) substrate, CaRuO3 coated SrTiO3 (0 0 1) substrate and tin-doped indium oxide substrate are found to be in the rhombohedral structure, while BiFeO3 film on SrRuO3 coated Nb: SrTiO3 (0 0 1) substrate is in the monoclinic structure. Our results suggest that polarized Raman spectroscopy would be a feasible tool to study the lattice structure of BiFeO3 films.

Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface.

Science.gov (United States)

Lee, M; Arras, R; Warot-Fonrose, B; Hungria, T; Lippmaa, M; Daimon, H; Casanove, M J

2017-11-01

The structure of Ir-doped LaAlO 3 /SrTiO 3 (001) interfaces was investigated on the atomic scale using probe-corrected transmission electron microscopy in high-angle annular dark-field scanning mode (HAADF-STEM) and electron energy loss spectroscopy (EELS), combined with first-principles calculations. We report the evolution of the strain state experimentally measured in a 5 unit-cell thick LaAlO 3 film as a function of the Ir concentration in the topmost SrTiO 3 layer. It is shown that the LaAlO 3 layers remain fully elastically strained up to 3% of Ir doping, whereas a higher doping level seems to promote strain relaxation through enhanced cationic interdiffusion. The observed differences between the energy loss near edge structure (ELNES) of Ti-L 2,3 and O-K edges at non-doped and Ir-doped interfaces are consistent with the location of the Ir dopants at the interface, up to 3% of Ir doping. These findings, supported by the results of density functional theory (DFT) calculations, provide strong evidence that the effect of dopant concentrations on the properties of this kind of interface should not be analyzed without obtaining essential information from the fine structural and chemical analysis of the grown structures.

Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

Directory of Open Access Journals (Sweden)

Minh D. Nguyen

2016-08-01

Full Text Available Pb0.9La0.1(Zr0.52Ti0.48O3 (PLZT relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco of 13.7 J/cm3 together with a high energy efficiency (η of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48O3 ferroelectric thin films (Ureco = 9.2 J/cm3 and η = 56.4% which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

Quasistatic antiferromagnetism in the quantum wells of SmTiO3/SrTiO3 heterostructures

Science.gov (United States)

Need, Ryan F.; Marshall, Patrick B.; Kenney, Eric; Suter, Andreas; Prokscha, Thomas; Salman, Zaher; Kirby, Brian J.; Stemmer, Susanne; Graf, Michael J.; Wilson, Stephen D.

2018-03-01

High carrier density quantum wells embedded within a Mott insulating matrix present a rich arena for exploring unconventional electronic phase behavior ranging from non-Fermi-liquid transport and signatures of quantum criticality to pseudogap formation. Probing the proposed connection between unconventional magnetotransport and incipient electronic order within these quantum wells has however remained an enduring challenge due to the ultra-thin layer thicknesses required. Here we address this challenge by exploring the magnetic properties of high-density SrTiO3 quantum wells embedded within the antiferromagnetic Mott insulator SmTiO3 via muon spin relaxation and polarized neutron reflectometry measurements. The one electron per planar unit cell acquired by the nominal d0 band insulator SrTiO3 when embedded within a d1 Mott SmTiO3 matrix exhibits slow magnetic fluctuations that begin to freeze into a quasistatic spin state below a critical temperature T*. The appearance of this quasistatic well magnetism coincides with the previously reported opening of a pseudogap in the tunneling spectra of high carrier density wells inside this film architecture. Our data suggest a common origin of the pseudogap phase behavior in this quantum critical oxide heterostructure with those observed in bulk Mott materials close to an antiferromagnetic instability.

Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3

Science.gov (United States)

Abazari, M.; Akdoǧan, E. K.; Safari, A.

2008-05-01

Single phase, epitaxial, ⟨001⟩ oriented, undoped and 1mol% Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films of 400nm thickness were synthesized on SrRuO3 coated SrTiO3. Such films exhibit well saturated hysteresis loops and have a spontaneous polarization (Ps) of 10μC /cm2, which is a 150% higher over the Ps of the undoped composition. The coercive field of 1mol% Mn doped films is 13kV/cm. Mn-doping results in three orders of magnitude decrease in leakage current above 50kV/cm electric field, which we attribute to the suppression of intrinsic p-type conductivity of undoped films by Mn donors.

Oriented growth of Sr n+1Ti n O3n+1 Ruddlesden-Popper phases in chemical solution deposited thin films

International Nuclear Information System (INIS)

Gutmann, Emanuel; Levin, Alexandr A.; Reibold, Marianne; Mueller, Jan; Paufler, Peter; Meyer, Dirk C.

2006-01-01

Oriented thin films of perovskite-related Sr n +1 Ti n O 3 n +1 Ruddlesden-Popper phases (n=1, 2, 3) were grown on (001) single-crystalline SrTiO 3 substrates. Preparation of the films was carried out by wet chemical deposition from metalorganic Sr-Ti solutions (rich in Sr) and subsequent conversion into the crystalline state by thermal treatment in air atmosphere at a maximum temperature of 700 deg. C. Solutions were prepared by a modified Pechini method. The films were investigated by wide-angle X-ray scattering and high-resolution transmission electron microscopy. The phase content of powders prepared from the dried solutions and annealed under similar conditions differed from that present in the films, i.e. only polycrystalline SrTiO 3 was detected together with oxides of Ti and Sr. - Graphical abstract: Cross-sectional image of an oriented chemical solution deposited thin film obtained by high-resolution transmission electron microscopy. Periodical spacings corresponding to SrTiO 3 substrate (right) and Sr 2 TiO 4 Ruddlesden-Popper phase (n=1) film region (left) are marked

Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

Science.gov (United States)

Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

2016-08-01

We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

Temperature-dependent surface structure, composition, and electronic properties of the clean SrTiO3(111) crystal face: Low-energy-electron diffraction, Auger-electron spectroscopy, electron energy loss, and ultraviolet-photoelectron spectroscopy studies

International Nuclear Information System (INIS)

Lo, W.J.; Somorjai, G.A.

1978-01-01

Low-energy-electron diffraction, Auger-electron spectroscopy, electron-energy-loss, and ultraviolet-photoelectron spectroscopies were used to study the structure, composition, and electron energy distribution of a clean single-crystal (111) face of strontium titanate (perovskite). The dependence of the surface chemical composition on the temperature has been observed along with corresponding changes in the surface electronic properties. High-temperature Ar-ion bombardment causes an irreversible change in the surface structure, stoichiometry, and electron energy distribution. In contrast to the TiO 2 surface, there are always significant concentrations of Ti 3+ in an annealed ordered SrTiO 3 (111) surface. This stable active Ti 3+ monolayer on top of a substrate with large surface dipole potential makes SrTiO 3 superior to TiO 2 when used as a photoanode in the photoelectrochemical cell

Sorption of U(VI) in surfaces of SrTiO3

International Nuclear Information System (INIS)

Ortiz O, H.B.; Ordonez R, E.; Fernandez V, S.M.

2004-01-01

In this work is presented the physico chemical characterization and evaluation of those surface properties and of sorption of U on the SrTiO 3 like possible candidate for contention barrier in the deep geological confinement. The made studies showed that the SrTiO 3 presents maximum levels of sorption of positive nature species (mainly UO 2 2+ and UO 2 NO 3 + ). (Author)

Barium titanate coated with magnesium titanate via fused salt method and its dielectric property

International Nuclear Information System (INIS)

Chen Renzheng; Cui Aili; Wang Xiaohui; Li Longtu

2003-01-01

Barium titanate fine particles were coated homogeneously with magnesium titanate via the fused salt method. The thickness of the magnesium titanate film is 20 nm, as verified by TEM and XRD. The mechanism of the coating is that: when magnesium chloride is liquated in 800 deg. C, magnesium will replace barium in barium titanate, and form magnesium titanate film on the surface of barium titanate particles. Ceramics sintered from the coated particles show improved high frequency ability. The dielectric constant is about 130 at the frequency from 1 to 800 MHz

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.

2013-12-12

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Tunable magnetism in the LaAlO3/SrTiO3 heterostructure: Insights from first-principles calculations

Science.gov (United States)

Xue, Yuanbin; Zhao, Jinzhu; Shan, Yueyue; Xu, Hu

2018-04-01

By performing first-principles calculations, we explored the origin and controlling methods of magnetism in ideal and oxygen deficient (001) LaAlO3/SrTiO3 (LAO/STO) heterostructures. It was found that the ferromagnetic ordering is the ground state and that the interfacial Ti 3d electrons introduced by the LaO-termination, polar catastrophe and oxygen vacancies can all contribute to the magnetism. With respect to the ways of tuning the magnetic properties, our results show that LaO-terminated films generally carry much stronger magnetic moments than their AlO2-terminated counterparts and that the magnitude of magnetic moments can also be effectively controlled by the LAO film thickness. In addition, oxygen vacancy leads to substantial electronic reconstruction of the interfacial Ti 3d orbitals, which enhances the magnetization and makes the magnetism emerge in thinner polar LAO films. This work offers useful information to facilitate one's understanding of the magnetism and to provide clues to engineer the magnetic behaviors in related oxide heterostructures.

Transport measurements on superconducting YBa2Cu3O7-δ thin film lines

International Nuclear Information System (INIS)

Moeckly, B.H.; Lathrop, D.K.; Redinbo, G.F.; Russek, S.E.; Buhrman, R.A.

1990-01-01

Critical current densities, magnetic field response, and microwave response have been measured for laser ablated YBa 2 Cu 3 O 7-δ thin film lines on MgO and SrTiO 3 substrates. Films on SrTiO 3 have critical current densities > 1 x 10 6 A/cm 2 at 77 K and show uniform transport properties in lines of all sizes. Films on MgO have critical current densities which range between 10 2 and 10 6 A/cm 2 at 77 K and show considerable variation from device to device on the same chip. Narrow lines on MgO with low critical current densities show Josephson weak link structure which includes RSJ-like IV curves, microwave induced constant voltage steps, and a high sensitivity to magnetic field. The presence of the Josephson weak links if correlated with small amounts of misaligned grains in film on MgO

Smooth surfaces in very thin GdBa2Cu3O7−δ films for application in superconducting tunnel junctions

International Nuclear Information System (INIS)

Navarro, H.; Sirena, M.; Kim, Jeehoon; Haberkorn, N.

2015-01-01

Highlights: • A detailed study of the morphological properties of GdBa 2 Cu 3 O 7−δ thin films was realized. • The inclusion of a very thin SrTiO 3 buffer layer modifies the surface of the SrTiO 3 substrates. • The inclusion of the buffer layer suppress the three dimensional nucleation in the GdBa 2 Cu 3 O 7−δ film. • GdBa 2 Cu 3 O 7−δ films with large areas free of topological defects and T c close to liquid nitrogen can be obtained. - Abstract: This paper provides a systematic analysis of the morphology and the superconducting critical temperature obtained in very thin GdBa 2 Cu 3 O 7−δ films grown on (0 0 1) SrTiO 3 substrates by DC sputtering. We find that the use of a very thin SrTiO 3 buffer layer (≈2 nm) modify the nucleation of GdBa 2 Cu 3 O 7−δ on the surface of the substrate reducing the formation of 3 dimensional clusters. Our results demonstrate that 16 nm thick GdBa 2 Cu 3 O 7−δ films with an average root-mean-square (RMS) smaller than 1 nm and large surface areas (up 10 μm 2 ) free of 3 dimensional topological defects can be obtained. In films thinner than 24 nm the onset (zero resistance) of superconducting transition of the films is reduced, being close to liquid nitrogen. This fact can be associated with stress reducing the orthorhombicity and slightly drop in oxygen stoichiometry

Mechanical and Microstructural Evaluation of Barium Strontium Titanate Thin Films for Improved Antenna Performance and Reliability

National Research Council Canada - National Science Library

Hubbard, C

1999-01-01

Ferroelectric barium strontium titanate (Ba(1-x)SrxTiO3 BSTO) films of 1-micron nominal thickness were deposited on single crystals of sapphire and electroded substrates at substrate temperatures varying from 30 deg C to 700 deg C...

An epitaxial transparent conducting perovskite oxide: double-doped SrTiO3

NARCIS (Netherlands)

Ravichandran, Jayakanth; Siemons, W.; Heijmerikx, Herman; Huijben, Mark; Majumdar, Arun; Ramesh, Ramamoorthy

2010-01-01

Epitaxial thin films of strontium titanate doped with different concentrations of lanthanum and oxygen vacancies were grown on LSAT substrates by pulsed laser deposition technique. Films grown with 5−15% La doping and a critical growth pressure of 1−10 mTorr showed high transparency (>70−95%) in the

Contributions of conduction band offset to the enhanced separation efficiency of photoinduced charges for SrTiO3/Bi2O3 heterojunction semiconductor

International Nuclear Information System (INIS)

Zhang, Zhenlong; Zhu, Jichun; Li, Shengjun; Mao, Yanli

2014-01-01

SrTiO 3 /Bi 2 O 3 heterojunction semiconductor was prepared and characterized by X-ray diffraction, UV–vis absorption spectrum, and scanning electron microscope, surface photovoltage spectroscopy, and photoluminescence spectroscopy. The surface photovoltage spectra indicate that the separation efficiency of photoinduced charges for SrTiO 3 /Bi 2 O 3 was enhanced compared with that of SrTiO 3 or Bi 2 O 3 . The energy band diagram of SrTiO 3 /Bi 2 O 3 heterojunction was directly determined with X-ray photoelectron spectroscopy, and the conduction band offset between SrTiO 3 and Bi 2 O 3 was quantified to be 0.28±0.03 eV. The photoluminescence spectra display that the recombination rate of photoinduced carriers for SrTiO 3 /Bi 2 O 3 decreases compared with that of SrTiO 3 or Bi 2 O 3 , which is mainly due to the energy levels matching between them. Therefore the enhanced separation efficiency of photoinduced charges is resulting from the energy difference between the conduction band edges of SrTiO 3 and Bi 2 O 3 . -- Graphical abstract: Enhanced separation efficiency for SrTiO 3 /Bi 2 O 3 is resulting from the energy difference between the conduction band edges. Highlights: ●Heterojunction semiconductor of SrTiO 3 /Bi 2 O 3 was prepared. ●SrTiO 3 /Bi 2 O 3 presents enhanced separation efficiency. ●Conduction band offset between SrTiO 3 and Bi 2 O 3 is quantified. ●Recombination rate of SrTiO 3 /Bi 2 O 3 decreases compared with single phases

Chemical changes in titanate surfaces induced by Ar+ ion bombardment

International Nuclear Information System (INIS)

Gonzalez-Elipe, A.R.; Fernandez, A.; Espinos, J.P.; Munuera, G.; Sanz, J.M.

1992-01-01

The reduction effects and compositional changes induced by 3.5 keV Ar + bombardment of several titanates (i.e. SrTiO 3 , Al 2 TiO 5 and NiTiO 3 ) have been quantitatively investigated by XPS. In all the samples studied here the original Ti 4+ species were reduced to lower oxidation states (i.e. Ti 3+ and Ti 2+ ), although to a lesser extent than in pure TiO 2 . On the contrary, whereas Sr 2+ and Al 3+ seem to remain unaffected by Ar + bombardment, in agreement with the behaviour of the respective oxides (i.e. SrO and Al 2 O 3 ), Ni 2+ appears more easily reducible to Ni o in NiTiO 3 than in NiO. In addition, other specific differences were observed between the titanates, which reveal the existence of interesting chemical effects related to the presence of the different counter-ions in the titanates. In the case of Al 2 TiO 5 , its Ar + -induced decomposition to form TiO 2 + Al 2 O 3 could be followed by XPS. (Author)

C-axial oriented (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 thin film grown on Nb doped SrTiO3 substrate by pulsed laser deposition

International Nuclear Information System (INIS)

Cao, L Z; Fu, W Y; Wang, S F; Wang, Q; Sun, Z H; Yang, H; Cheng, B L; Wang, H; Zhou, Y L

2007-01-01

A c-axial oriented (Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 thin film has been grown on a (0 0 1) Nb doped SrTiO 3 substrate by pulsed laser deposition. The permittivity, dielectric loss and tunability of the c-axial oriented film are 187, 0.002 and 6% (at 750 kV cm -1 biasing), respectively, indicating a figure of merit of 30. Moreover, an asymmetry behaviour is observed in the dc electric field dependence of permittivity, which could be attributed to the asymmetry of top and bottom electrodes

Electric field effects in graphene/LaAlO3/SrTiO3 heterostructures and nanostructures

Directory of Open Access Journals (Sweden)

Mengchen Huang

2015-06-01

Full Text Available We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

Stability and electronic structure studies of LaAlO3/SrTiO3 (110) heterostructures

International Nuclear Information System (INIS)

Du Yan-Ling; Wang Chun-Lei; Li Ji-Chao; Xu Pan-Pan; Zhang Xin-Hua; Liu Jian; Su Wen-Bin; Mei Liang-Mo

2014-01-01

The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAlO 3 /SrTiO 3 (110). By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAlO 3 /SrTiO 3 (110) heterostructure, the Ti—O octahedron distortions cause the Ti t 2g orbitals to split into the two-fold degenerate d xz /d yz and nondegenerate d xy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t 2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaAlO 3 and SrTiO 3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAlO 3 /SrTiO 3 (110). (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Conductivity and structure of sub-micrometric SrTiO3-YSZ composites

DEFF Research Database (Denmark)

Ruiz Trejo, Enrique; Thydén, Karl Tor Sune; Bonanos, Nikolaos

2016-01-01

Sub-micrometric composites of SrTiO3-YSZ (1:1 volume) and samples of SrTiO3 were prepared by high temperature consolidation of precursors obtained by precipitation with NaOH. The structure development and morphology of the precursors were studied by XRD and SEM. The perovskite and fluorite phases...... in the composites are clearly formed at 600°C with no signs of reaction up to 1100°C; the nominally pure SrTiO3 can be formed at temperatures as low as 400°C. Composites with sub-micrometric grain sizes can be prepared successfully without reaction between the components, although a change in the cell parameter...... of the SrTiO3 is attributed to the presence of Na. The consolidated composites were studied by impedance spectroscopy between 200 and 400°C and at a fixed temperature of 600°C with a scan in the partial pressure of oxygen. The composites did not exhibit high levels of ionic conductivity in the grain...

Growth and characterization of epitaxial anatase TiO2(001) on SrTiO3-buffered Si(001) using atomic layer deposition

International Nuclear Information System (INIS)

McDaniel, M.D.; Posadas, A.; Wang, T.; Demkov, A.A.; Ekerdt, J.G.

2012-01-01

Epitaxial anatase titanium dioxide (TiO 2 ) films have been grown by atomic layer deposition (ALD) on Si(001) substrates using a strontium titanate (STO) buffer layer grown by molecular beam epitaxy (MBE) to serve as a surface template. The growth of TiO 2 was achieved using titanium isopropoxide and water as the co-reactants at a substrate temperature of 225–250 °C. To preserve the quality of the MBE-grown STO, the samples were transferred in-situ from the MBE chamber to the ALD chamber. After ALD growth, the samples were annealed in-situ at 600 °C in vacuum (10 −7 Pa) for 1–2 h. Reflection high-energy electron diffraction was performed during the MBE growth of STO on Si(001), as well as after deposition of TiO 2 by ALD. The ALD films were shown to be highly ordered with the substrate. At least four unit cells of STO must be present to create a stable template on the Si(001) substrate for epitaxial anatase TiO 2 growth. X-ray diffraction revealed that the TiO 2 films were anatase with only the (004) reflection present at 2θ = 38.2°, indicating that the c-axis is slightly reduced from that of anatase powder (2θ = 37.9°). Anatase TiO 2 films up to 100 nm thick have been grown that remain highly ordered in the (001) direction on STO-buffered Si(001) substrates. - Highlights: ► Epitaxial anatase films are grown by atomic layer deposition (ALD) on Si(001). ► Four unit cells of SrTiO 3 on silicon create a stable template for ALD. ► TiO 2 thin films have a compressed c-axis and an expanded a-axis. ► Up to 100 nm thick TiO 2 films remain highly ordered in the (001) direction.

Physics of SrTiO3-based heterostructures and nanostructures: a review.

Science.gov (United States)

Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

2018-02-09

This review provides a summary of the rich physics expressed within SrTiO 3 -based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO 3 itself, we will then discuss the basics of SrTiO 3 -based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Physics of SrTiO3-based heterostructures and nanostructures: a review

Science.gov (United States)

Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

2018-03-01

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Efficient degradation of Methylene Blue dye over highly reactive Cu doped strontium titanate (SrTiO3) nanoparticles photocatalyst under visible light.

Science.gov (United States)

Rahman, Qazi Inamur; Ahmad, Musheer; Misra, Sunil Kumar; Lohani, Minaxi

2012-09-01

Visible light induced photocatalysts of Cu doped SrTiO3 (Cu/SrTiO3) nanoparticles with the size -60-75 nm were prepared via facile sol-gel method. The morphological, optical, crystalline properties and compositions of synthesized Cu/SrTiO3 nanoparticles were thoroughly characterized by field emission scanning electron microscopy (FE-SEM), powder X-ray diffraction (XRD), ultra violet-visible spectroscopy (UV-Vis) and energy dispersive X-ray (EDX). A significant red shift in the UV-diffused reflectance spectrum was observed and the absorption edge shifted to visible region by the Cu doping. Surprisingly, the band gap of SrTiO3 was changed from 3.2 eV drop to 2.96 eV. The photocatalytic activity of the synthesized Cu/SrTiO3 nanoparticles was demonstrated for the degradation of Methylene Blue dye under visible light irradiation. The formation of new acceptor region in Cu/SrTiO3 was responsible for high photocatalytic activity of Cu/SrTiO3 nanoparticles. The results showed that the Methylene Blue dye was degraded by -66% within time span of 2 h over the Cu/SrTiO3 nanoparticles. This dye degradation reaction followed the Langmuir-Hinshelwood kinetics and also exhibited first order reaction rate. The calculated rate constant for the degradation reaction following first order kinetics was k = 0.0016 min(-1).

Magnetic two-dimensional electron gas at the manganite-buffered LaAlO3/SrTiO3 interface

DEFF Research Database (Denmark)

R. Zhang, H.; Zhang, Y.; Zhang, H.

2017-01-01

Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions with the mediat......Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions...... with the mediation of itinerant electrons. Herein, we report a magnetic 2DEG at a La7/8Sr1/8MnO3-buffered LaAlO3/SrTiO3 interface, which simultaneously shows electrically tunable anomalous Hall effect and high conductivity. The spin-polarized temperature for the 2DEG is promoted to 30 K while the mobility remains...... high. The magnetism likely results from a gradient manganese interdiffusion into SrTiO3. The present work demonstrates the great potential of manganite-buffered LaAlO3/SrTiO3 interfaces for spintronic applications....

Growing LaAlO3/SrTiO3 interfaces by sputter deposition

Directory of Open Access Journals (Sweden)

I. M. Dildar

2015-06-01

Full Text Available Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

Fabrication of Schottky Junction Between Au and SrTiO3

Science.gov (United States)

Inoue, Akira; Izumisawa, Kei; Uwe, Hiromoto

2001-05-01

A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (˜ 10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Directory of Open Access Journals (Sweden)

Shuxiang Wu

2013-12-01

Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

In-situ YBa2Cu3O7/SrTiO3/YBa2Cu3O7 a-b plane Josephson edge junctions

International Nuclear Information System (INIS)

Aharoni, E.; Koren, G.; Polturak, E.; Cohen, D.; Iskevitch, E.

1992-01-01

YBCO/SrTiO 3 /YBCO thin film edge junctions were prepared in-situ and characterized. The epitaxial growth of SrTiO 3 on YBCO led to a sharp and well defined junction edge with a very high yield. Typical junctions showed critical currents up to 83 K, with I c ∝ (1 - T/Tc) 2 temperature dependence. Sharp Shapiro steps were observed under microwave radiation at temperatures up to 82 K. A typical diffraction pattern was found in the voltage response of the junctions to transverse magnetic field. (orig.)

Strontium Titanate Buffer Layers on Cu/33%Ni Substrates using a Novel Solution Chemistry

DEFF Research Database (Denmark)

Pallewatta, Pallewatta G A P; Yue, Zhao; Hui, Tian

2013-01-01

SrTiO3 is a widely studied perovskite material due to its advantages as a buffer template which can be simply applied between a metal substrate tape and a superconducting layer in 2G high temperature superconducting (HTS) tapes. In this study, heteroepitaxial SrTiO3 thin films were deposited on t...

Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3

Science.gov (United States)

Abazari, M.; Akdoǧan, E. K.; Safari, A.

2008-11-01

Oxygen partial pressure (PO_2) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450nm ⟨001⟩ oriented epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated SrTiO3. Films deposited at 400mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5μC /cm2, respectively, which is ˜100% increase over the ones grown at 100mTorr. The dielectric constant linearly increases from 220 to 450 with increasing PO2. The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.

Synthesis of Ag-loaded SrTiO_3/TiO_2 heterostructure nanotube arrays for enhanced photocatalytic performances

International Nuclear Information System (INIS)

Hu, Zijun; Chen, Da; Zhan, Xiaqiang; Wang, Fang; Qin, Laishun; Huang, Yuexiang

2017-01-01

In this work, the effect of loading Ag nanoparticles on the photocatalytic activity of SrTiO_3/TiO_2 nanotube arrays (TNTAs) was investigated. TNTAs were partially transformed to SrTiO_3 through a hydrothermal treatment, which could preserve the tubular structure of TNTAs, and then, Ag nanoparticles were well deposited on the surface of SrTiO_3/TNTAs heterostructure by a chemical reduction process. Compared to the TNTAs sample, the Ag-loaded SrTiO_3/TNTAs sample showed significantly enhanced photocatalytic activities for photodegradation of rhodamine B. The enhanced photocatalytic activity of Ag-loaded SrTiO_3/TNTAs could be attributed to the increased optical absorption as well as the efficient charge transfer and separation of photogenerated electron-hole pairs induced by the SrTiO_3/TNTAs heterojunction and the Schottky barrier between metallic Ag and SrTiO_3/TNTAs. On the basis of the trapping experiments, the possible photocatalytic mechanism was also discussed. (orig.)

Growth of Pb(Ti,Zr)O 3 thin films by metal-organic molecular beam epitaxy

Science.gov (United States)

Avrutin, V.; Liu, H. Y.; Izyumskaya, N.; Xiao, B.; Özgür, Ü.; Morkoç, H.

2009-02-01

Single-crystal Pb(Zr xTi 1-x)O 3 thin films have been grown on (0 0 1) SrTiO 3 and SrTiO 3:Nb substrates by molecular beam epitaxy using metal-organic source of Zr and two different sources of reactive oxygen—RF plasma and hydrogen-peroxide sources. The same growth modes and comparable structural properties were observed for the films grown with both oxygen sources, while the plasma source allowed higher growth rates. The films with x up to 0.4 were single phase, while attempts to increase x beyond gave rise to the ZrO 2 second phase. The effects of growth conditions on growth modes, Zr incorporation, and phase composition of the Pb(Zr xTi 1-x)O 3 films are discussed. Electrical and ferroelectric properties of the Pb(Zr xTi 1-x)O 3 films of ~100 nm in thickness grown on SrTiO 3:Nb were studied using current-voltage, capacitance-voltage, and polarization-field measurements. The single-phase films show low leakage currents and large breakdown fields, while the values of remanent polarization are low (around 5 μC/cm 2). It was found that, at high sweep fields, the contribution of the leakage current to the apparent values of remanent polarization can be large, even for the films with large electrical resistivity (˜10 8-10 9 Ω cm at an electric filed of 1 MV/cm). The measured dielectric constant ranges from 410 to 260 for Pb(Zr 0.33Ti 0.67)O 3 and from 313 to 213 for Pb(Zr 0.2Ti 0.8)O 3 in the frequency range from 100 to 1 MHz.

Micro-spectroscopic investigation of valence change processes in resistive switching SrTiO3 thin films

International Nuclear Information System (INIS)

Koehl, Annemarie

2014-01-01

Due to physical limitations of the currently used flash memory in terms of writing speed and scalability, new concepts for data storage attract great interest. A possible alternative with promising characteristics are so-called ''Resistive Random Access Memories'' (ReRAM). These memory devices are based on the resistive switching effect where the electrical resistance of a metal-insulator-metal (MIM) structure can be switched reversibly by a current or voltage pulse. Although this effect attracted wide scientific as well as commercial interest, up to now the it is not fully understood on a microscopic scale. Consequently, in this work the chemical and physical modifications caused by the resistive switching process are studied by spectroscopic techniques. As most switching models predict a strongly localized rather than a homogeneous effect, advanced micro-spectroscopy techniques are employed where additionally the lateral structure of the sample is imaged. In this work Fe-doped SrTiO 3 films are used as model material due to the thorough understanding of their defect chemistry. The epitaxial thin films are prepared by pulsed laser deposition. In a first approach, transmission X-ray microscopy is employed to study the bulk properties of ReRAM devices. At first, a new procedure for sample preparation based on a selective etching process is developed in order to realize photon-transparent samples. Investigations of switched devices reveal a significant contribution of Ti 3+ states within growth defects. In contrast to the indirect evidence in previous studies, this observation directly confirms that the resistance change is based on a local redox-process. The localization of the switching process within the growth defects is explained by a self-accelerating process due to Joule heating within the pre-reduced defects. In a second approach, after removal of the top electrode the chemical and electronic structure of the former interface between the

EPR of photochromic Mo3+ in SrTiO3

NARCIS (Netherlands)

Kool, Th.W.

2010-01-01

In single crystals of SrTiO_3, a paramagnetic center, characterized by S = 3/2 and hyperfine interaction with an I = 5/2 nuclear spin has been observed in the temperature range 4.2K-77K by means of EPR. The impurity center is attributed to Mo3+. No additional line splitting in the EPR spectrum due

Substrate-induced strain effects on Pr0.6Ca0.4MnO3 films

International Nuclear Information System (INIS)

Nelson, C S; Hill, J P; Gibbs, Doon; Rajeswari, M; Biswas, A; Shinde, S; Greene, R L; Venkatesan, T; Millis, A J; Yokaichiya, F; Giles, C; Casa, D; Venkataraman, C T; Gog, T

2004-01-01

We report the characterization of the crystal structure, low-temperature charge and orbital ordering, transport and magnetization of Pr 0.6 Ca 0.4 MnO 3 films grown on LaAlO 3 , NdGaO 3 and SrTiO 3 substrates, which provide compressive (LaAlO 3 ) and tensile (NdGaO 3 and SrTiO 3 ) strain. The films are observed to exhibit different crystallographic symmetries from the bulk material and the low-temperature ordering is found to be more robust under compressive as opposed to tensile strain. In fact, bulk-like charge and orbital ordering is not observed in the film grown on NdGaO 3 , which is the substrate that provides the least amount of measured, but tensile, strain. This result suggests the importance of the role played by the Mn-O--Mn bond angles in the formation of charge and orbital ordering at low temperatures. Finally, in the film grown on LaAlO 3 , a connection between the lattice distortion associated with orbital ordering and the magnetization is reported

Direct Observation of Room-Temperature Stable Magnetism in LaAlO3/SrTiO3 Heterostructures.

Science.gov (United States)

Yang, Ming; Ariando; Zhou, Jun; Asmara, Teguh Citra; Krüger, Peter; Yu, Xiao Jiang; Wang, Xiao; Sanchez-Hanke, Cecilia; Feng, Yuan Ping; Venkatesan, T; Rusydi, Andrivo

2018-03-21

Along with an unexpected conducting interface between nonmagnetic insulating perovskites LaAlO 3 and SrTiO 3 (LaAlO 3 /SrTiO 3 ), striking interfacial magnetisms have been observed in LaAlO 3 /SrTiO 3 heterostructures. Interestingly, the strength of the interfacial magnetic moment is found to be dependent on oxygen partial pressures during the growth process. This raises an important, fundamental question on the origin of these remarkable interfacial magnetic orderings. Here, we report a direct evidence of room-temperature stable magnetism in a LaAlO 3 /SrTiO 3 heterostructure prepared at high oxygen partial pressure by using element-specific soft X-ray magnetic circular dichroism at both Ti L 3,2 and O K edges. By combining X-ray absorption spectroscopy at both Ti L 3,2 and O K edges and first-principles calculations, we qualitatively ascribe that this strong magnetic ordering with dominant interfacial Ti 3+ character is due to the coexistence of LaAlO 3 surface oxygen vacancies and interfacial (Ti Al -Al Ti ) antisite defects. On the basis of this new understanding, we revisit the origin of the weak magnetism in LaAlO 3 /SrTiO 3 heterostructures prepared at low oxygen partial pressures. Our calculations show that LaAlO 3 surface oxygen vacancies are responsible for the weak magnetism at the interface. Our result provides direct evidence on the presence of room-temperature stable magnetism and a novel perspective to understand magnetic and electronic reconstructions at such strategic oxide interfaces.

Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

KAUST Repository

Nazir, Safdar

2011-03-31

Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

KAUST Repository

Nazir, Safdar; Pulikkotil, J. J.; Schwingenschlö gl, Udo; Singh, Nirpendra

2011-01-01

Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

Fracture force analysis at the interface of Pd and SrTiO3

International Nuclear Information System (INIS)

Nazarpour, S.; Zamani, C.; Cirera, A.

2009-01-01

The objective of this work is to develop an experimental indentation based method to determine the fracture force at the interface of Pd thin films and SrTiO 3 perovskite substrate. This paper reports on the results obtained for indentation into Pd thin films which were deposited in various thicknesses from 20 nm to 200 nm under vacuum and 300 deg. C substrate temperature by an electron beam physical vapor deposition. Initially, the relation between grain size, elastic module and hardness was considered as a function of film thickness. Thereafter, in developing new method, oscillating indentation was performed with different applied forces and oscillating times in order to measure the critical fracture force in each thickness. The effect of oscillating time on plastically deformed regions surrounding an indentation was schematically explained in conjunction with variation of oscillating time to determine the interfacial properties of the Pd thin film. Furthermore, the accuracy of the critical fracture force was ensured by applied force versus piling up height plot. The method is validated experimentally for the soft thin films over the hard substrate. However, further study would be essential to measure the film adhesion by means of fracture force at the interface

Buffer layers for growth of the YBa sub 2 Cu sub 3 O sub 7 sub - sub x films on silicon

CERN Document Server

Razumov, S V

2001-01-01

The results of the studies on the structural characteristics of the SrTiO sub 3 , NdGaO sub 3 and CeO sub 2 buffer layers, obtained through the ion-plasma spraying on the silicon substrates, are presented. It is shown that the phase composition and internal stresses in the films are strongly dependent on the deposition temperature. The technological conditions of growth of primarily oriented SrTiO sub 3 , NdGaO sub 3 and CeO sub 2 films are dortmund. The structural quality of the obtained buffer films is sufficient for further growth of the YBa sub 2 Cu sub 3 O sub 7 sub - sub x high-quality films on the silicon substrates

Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications

Directory of Open Access Journals (Sweden)

Robert Mamazza

2012-04-01

Full Text Available New apparatus and a new process for the sputter deposition of modified barium titanate thin-films were developed. Films were deposited at temperatures up to 900 °C from a Ba0.96Ca0.04Ti0.82Zr0.18O3 (BCZTO target directly onto Si, Ni and Pt surfaces and characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and X-ray photoelectron spectroscopy (XPS. Film texture and crystallinity were found to depend on both deposition temperature and substrate: above 600 °C, the as-deposited films consisted of well-facetted crystallites with the cubic perovskite structure. A strongly textured Pt (111 underlayer enhanced the (001 orientation of BCZTO films deposited at 900 °C, 10 mtorr pressure and 10% oxygen in argon. Similar films deposited onto a Pt (111 textured film at 700 °C and directly onto (100 Si wafers showed relatively larger (011 and diminished intensity (00ℓ diffraction peaks. Sputter ambients containing oxygen caused the Ni underlayers to oxidize even at 700 °C: Raising the process temperature produced more diffraction peaks of NiO with increased intensities. Thin-film capacitors were fabricated using ~500 nm thick BCZTO dielectrics and both Pt and Ni top and bottom electrodes. Small signal capacitance measurements were carried out to determine capacitance and parallel resistance at low frequencies and from these data, the relative permittivity (er and resistivity (r of the dielectric films were calculated; values ranged from ~50 to >2,000, and from ~104 to ~1010 Ω∙cm, respectively.

MIS field effect transistor with barium titanate thin film as a gate insulator

Energy Technology Data Exchange (ETDEWEB)

Firek, P., E-mail: pfirek@elka.pw.edu.p [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Werbowy, A.; Szmidt, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

2009-11-25

The properties of barium titanate (BaTiO{sub 3}, BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO{sub 3} (containing La{sub 2}O{sub 3} admixture) thin films in a role of gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO{sub 3} + La{sub 2}O{sub 3} (2 wt.%) target. In the paper transfer and output current-voltage (I-V), transconductance and output conductance characteristics of obtained transistors are presented and discussed. Basic parameters of these devices like, e.g. threshold voltage (V{sub TH}), are determined and discussed.

Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

International Nuclear Information System (INIS)

Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

2011-12-01

Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

Temperature-dependent optical absorption of SrTiO3

International Nuclear Information System (INIS)

Kok, Dirk J.; Irmscher, Klaus; Naumann, Martin; Guguschev, Christo; Galazka, Zbigniew; Uecker, Reinhard

2015-01-01

The optical absorption edge and near infrared absorption of SrTiO 3 were measured at temperatures from 4 to 1703 K. The absorption edge decreases from 3.25 eV at 4 K to 1.8 eV at 1703 K and is extrapolated to approximately 1.2 eV at the melting point (2350 K). The transmission in the near IR decreases rapidly above 1400 K because of free carrier absorption and is about 50% of the room temperature value at 1673 K. The free carriers are generated by thermal excitation of electrons over the band gap and the formation of charged vacancies. The observed temperature-dependent infrared absorption can be well reproduced by a calculation based on simple models for the intrinsic free carrier concentration and the free carrier absorption coefficient. The measured red shift of the optical absorption edge and the rising free carrier absorption strongly narrow the spectral range of transmission and impede radiative heat transport through the crystal. These effects have to be considered in high temperature applications of SrTiO 3 -based devices, as the number of free carriers rises considerably, and in bulk crystal growth to avoid growth instabilities. Temperature dependent optical absorption edge of SrTiO 3 , measured, fitted, and extrapolated to the melting point. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Lattice Dynamical Properties of Ferroelectric Thin Films at the Nanoscale

Energy Technology Data Exchange (ETDEWEB)

Xi, Xiaoxing [Temple University

2014-01-13

In this project, we have successfully demonstrated atomic layer-by-layer growth by laser MBE from separate targets by depositing SrTiO3 films from SrO and TiO2 targets. The RHEED intensity oscillation was used to monitor and control the growth of each SrO and TiO2 layer. We have shown that by using separate oxide targets, laser MBE can achieve the same level of stoichiometry control as the reactive MBE. We have also studied strain relaxation in LaAlO3 films and its effect on the 2D electron gas at LaAlO3/SrTiO3 interface. We found that there are two layers of different in-plane lattice constants in the LaAlO3 films, one next to the SrTiO3 substrate nearly coherently strained, while the top part relaxed as the film thickness increases above 20 unit cells. This strain relaxation significantly affect the transport properties of the LaAlO3/SrTiO3 interface.

Photo(electro)chemical oxidation of water by the persulfate ion over aqueous suspensions of strontium titanate SrTiO3 containing lanthanum chromite LaCrO3

NARCIS (Netherlands)

Thewissen, D.H.M.W.; Timmer, K.; Eeuwhorst‐Reinten, M.; Tinnemans, A.H.A.; Mackor, A.

1982-01-01

The photodecomposition of the S2O2‐ 8 ion to the SO2‐ 4 ion with concomitant oxidation of water to molecular oxygen over n‐type SrTiO3 powders mixed with LaCrO3 (mole fraction x = 0–1), using UV light (λ > 300 nm), is considerably faster than the photochemical (UV) decomposition of S2O2‐ 8 in water

Optical band gap and magnetic properties of unstrained EuTiO3 films

International Nuclear Information System (INIS)

Lee, J. H.; Ke, X.; Schiffer, P.; Podraza, N. J.; Kourkoutis, L. Fitting; Fennie, C. J.; Muller, D. A.; Heeg, T.; Schlom, D. G.; Roeckerath, M.; Schubert, J.; Freeland, J. W.

2009-01-01

Phase-pure, stoichiometric, unstrained, epitaxial (001)-oriented EuTiO 3 thin films have been grown on (001) SrTiO 3 substrates by reactive molecular-beam epitaxy. Magnetization measurements show antiferromagnetic behavior with T N =5.5 K, similar to bulk EuTiO 3 . Spectroscopic ellipsometry measurements reveal that EuTiO 3 films have a direct optical band gap of 0.93±0.07 eV.

Control of oxygen octahedral rotation in BiFeO3 films using modulation of SrRuO3 bottom electrode layer

Science.gov (United States)

Lee, Sungsu; Jo, Ji Young

2015-03-01

Oxygen octahedral rotation of multiferroic BiFeO3 (BFO) has attracted great attention due to changes of electrical and magnetic properties. Coupling of octahedral rotation in BFO-bottom electrode layer interface remains unexplored. Recently, there have been reported the control of octahedral rotation in SrRuO3 (SRO) film on SrTiO3 (001) substrate by coherently controlling the oxygen pressure during growth and interfacial coupling. Here we demonstrate that the octahedral rotation of BFO film is changed using tetragonal a0a0c- tilted-SRO bottom electrodes. In this work, BFO/SRO heterostructure is fabricated to SrTiO3 (001) single crystal substrates by pulsed laser deposition at different oxygen partial pressures. The rotation pattern of FeO6 and the structural symmetry are identified from half-integer reflections using high-resolution X-ray diffraction. The effects depending on octahedral tilting of BFO films on the magnetic and ferroelectric properties will be presented.

Ferroelectricity of strained SrTiO3 in lithium tetraborate glass-nanocomposite and glass-ceramic

Science.gov (United States)

Abdel-Khalek, E. K.; Mohamed, E. A.; Kashif, I.

2018-02-01

Glass-nanocomposite (GNCs) sample of the composition [90Li2B4O7-10SrTiO3] (mol %) was prepared by conventional melt quenching technique. The glassy phase and the amorphous nature of the GNCs sample were identified by Differential thermal analysis (DTA) and X-ray diffraction (XRD) studies, respectively. DTA of the GNCs exhibits sharp and broad exothermic peaks which represent the crystallization of Li2B4O7 and SrTiO3, respectively. The tetragonal Li2B4O7 and tetragonal SrTiO3 crystalline phases in glass-ceramic (GC) were identified by XRD and scanning electron microscopic (SEM). The strain tetragonal SrTiO3 phase in GNCs and GC has been confirmed by SEM. The values of crystallization activation energies (Ec1 and Ec2) for the first and second exothermic peaks are equal to 174 and 1452 kJ/mol, respectively. The Ti3+ ions in tetragonal distorted octahedral sites in GNCs were identified by optical transmission spectrum. GNCs and GC samples exhibit broad dielectric anomalies at 303 and 319 K because of strained SrTiO3 ferroelectric, respectively.

PLD of X7R for thin film capacitors

International Nuclear Information System (INIS)

Hino, Takanori; Matsumoto, Noriyuki; Nishida, Minoru; Araki, Takao

2008-01-01

Thin film capacitors with a thickness of 200 nm were prepared on SrTiO 3 (1 0 0), (1 1 0) and (1 1 1) single crystal substrates at a temperature of 973 K by pulsed laser deposition (PLD) using a KrF excimer laser in an O 2 -O 3 atmosphere with a gas pressure of 1 Pa using an X7R sintered target. As a result, perovskite BaTiO 3 solid solution films were obtained. In the X7R thin films on (1 0 0) and (1 1 0) SrTiO 3 , only diffraction peaks with strong intensities from BaTiO 3 (1 0 0) and (1 1 0), respectively, were observed. X7R films on SrTiO 3 (1 1 1) were grown epitaxially oriented to the crystal plane direction of the substrate by inserting an initial homoepitaxial SrTiO 3 layer with a thickness of 4 nm. The X7R/SrTiO 3 film capacitors yielded a large volumetric efficiency of 50 μF/mm 3 and a temperature coefficient of capacitance (TCC) of -1.3% to 1.3% which satisfies the EIA standard specifications for X7R

Deposition barium titanate (BaTiO3) doped lanthanum with chemical solution deposition

International Nuclear Information System (INIS)

Iriani, Y.; Nurhadi, N.; Jamaludin, A.

2016-01-01

Deposition of Barium Titanate (BaTiO 3 ) thin films used Chemical Solution Deposition (CSD) method and prepared with spin coater. BaTiO 3 is doped with lanthanum, 1%, 2%, and 3%. The thermal process use annealing temperature 900°C and holding time for 3 hours. The result of characterization with x-ray diffraction (XRD) equipment show that the addition of La 3+ doped on Barium Titanate caused the change of angle diffraction.The result of refine with GSAS software shows that lanthanum have been included in the structure of BaTiO 3 . Increasing mol dopant La 3+ cause lattice parameter and crystal volume become smaller. Characterization result using Scanning Electron Microscopy (SEM) equipment show that grain size (grain size) become smaller with increasing mole dopant (x) La 3+ . The result of characterization using Sawyer Tower methods show that all the samples (Barium Titanante and Barium Titanate doped lanthanum) are ferroelectric material. Increasing of mole dopant La 3+ cause smaller coercive field and remanent polarization increases. (paper)

Study of grain boundary tunneling in barium-titanate ceramic films

CERN Document Server

Wong, H; Poon, M C

1999-01-01

The temperature and the electric-field dependences of the current-voltage characteristics and the low-frequency noise of barium-titanate ceramic films are studied. An abnormal field dependence is observed in the resistivity of BaTiO sub 3 materials with a small average grain size. In addition, experiments show that the low-frequency noise behaviors are governed by grain-boundary tunneling at room temperature and by trapping-detrapping of grain-boundary states at temperatures above the Curie point. Physical models for the new observations are developed. Results suggest that grain-boundary tunneling of carriers is as important as the double Schottky barrier in the current conduction in BaTiO sub 3 materials with small grain sizes.

Structural features of epitaxial NiFe2O4 thin films grown on different substrates by direct liquid injection chemical vapor deposition

Science.gov (United States)

Datta, R.; Loukya, B.; Li, N.; Gupta, A.

2012-04-01

NiFe2O4 (NFO) thin films are grown on four different substrates, i.e., Lead Zinc Niobate-Lead Titanate (PZN-PT), Lead Magnesium Niobate-Lead Titanate (PMN-PT), MgAl2O4 (MAO) and SrTiO3 (STO), by a direct liquid injection chemical vapor deposition technique (DLI-CVD) under optimum growth conditions where relatively high growth rate (˜20 nm/min), smooth surface morphology and high saturation magnetization values in the range of 260-290 emu/ cm3 are obtained. The NFO films with correct stoichiometry (Ni:Fe=1:2) grow epitaxially on all four substrates, as confirmed by energy dispersive X-ray spectroscopy, transmission electron microscopy and x-ray diffraction. While the films on PMN-PT and PZN-PT substrates are partially strained, essentially complete strain relaxation occurs for films grown on MAO and STO. The formations of threading dislocations along with dark diffused contrast areas related to antiphase domains having a different cation ordering are observed on all four substrates. These crystal defects are correlated with lattice mismatch between the film and substrate and result in changes in magnetic properties of the films. Atomic resolution HAADF imaging and EDX line profiles show formation of a sharp interface between the film and the substrate with no inter-diffusion of Pb or other elements across the interface. Antiphase domains are observed to originate at the film-substrate interface.

Application of electroless Ni-P coating on magnesium alloy via CrO3/HF free titanate pretreatment

Science.gov (United States)

Rajabalizadeh, Z.; Seifzadeh, D.

2017-11-01

The titanate conversion coating was applied as CrO3/HF free pretreatment for the electroless Ni-P plating on AM60B magnesium alloy. The microscopic images revealed that the alloy surface was completely covered by a cracked conversion film after titanate pretreatment which was mainly composed of Mg(OH)2/MgO, MgF2, TiO2, SiO2, and Al2O3/Al(OH)3. The microscopic images also revealed that numerous Ni nucleation centers were formed over the titanate film after short electroless plating times. The nucleation centers were created not only on the cracked area but also over the whole pretreated surface due to the catalytic action of the titanate film. Also, uniform, dense, and defect-free Ni-P coating with fine structure was achieved after 3 h plating. The Ni-P coating showed mixed crystalline-amorphous structure due to its moderate phosphorus content. The results of two traditional corrosion monitoring methods indicated that the Ni-P coating significantly increases the corrosion resistance of the magnesium alloy. Moreover, Electrochemical Noise (EN) method was used as a non-polarized technique to study the corrosion behavior of the electroless coating at different immersion times. The results of the EN tests were clearly showed the localized nature of the corrosion process. Micro-hardness value of the magnesium alloy was remarkably enhanced after the electroless plating. Finally, suitable adhesion between the Ni-P coating and the magnesium alloy substrate was confirmed by thermal shock and pull-off-adhesion tests.

Doping site dependent thermoelectric properties of epitaxial strontium titanate thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Mehdizadeh Dehkordi, Arash; Tritt, Terry M.; Alshareef, Husam N.

2014-01-01

We demonstrate that the thermoelectric properties of epitaxial strontium titanate (STO) thin films can be improved by additional B-site doping of A-site doped ABO3 type perovskite STO. The additional B-site doping of A-site doped STO results in increased electrical conductivity, but at the expense of Seebeck coefficient. However, doping on both sites of the STO lattice significantly reduces the lattice thermal conductivity of STO by adding more densely and strategically distributed phononic scattering centers that attack wider phonon spectra. The additional B-site doping limits the trade-off relationship between the electrical conductivity and total thermal conductivity of A-site doped STO, leading to an improvement in the room-temperature thermoelectric figure of merit, ZT. The 5% Pr3+ and 20% Nb5+ double-doped STO film exhibits the best ZT of 0.016 at room temperature. This journal is

Dielectric loss of strontium titanate thin films

Science.gov (United States)

Dalberth, Mark Joseph

1999-12-01

Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

A theoretical investigation of the influence of the surface effect on the ferroelectric property of strained barium titanate film

Science.gov (United States)

Fang, Chao; Liu, Wei Hua

2017-07-01

The influence of the surface effect on the ferroelectric property of strained barium titanate film has been investigated. In this study, based on time-dependent Ginsburg-Landau-Devonshire thermodynamic theory, the surface effects have been simulated by introducing a surface constant, which leads to the strained BaTiO3 film consisting of inner tetragonal core and gradient lattice strain layer. Further, surface effects produce a depolarization field which has a dominant effect on the ferroelectric properties of the films. The spontaneous polarization, dielectric properties and ferroelectric hysteresis loop of BaTiO3 film are calculated under different boundary conditions. Theoretical and experimental results for strained BaTiO3 film are compared and discussed.

Sulfide and Oxide Heterostructures For the SrTiO3 Thin Film Growth on Si and Their Structural and Interfacial Stabilities

Science.gov (United States)

Yoo, Young‑Zo; Song, Jeong‑Hwan; Konishi, Yoshinori; Kawasaki, Masashi; Koinuma, Hideomi; Chikyow, Toyohiro

2006-03-01

Epitaxial SrTiO3 (STO) thin films with high electrical properties were grown on Si using ZnS single- and SrS/MnS hetero-buffer layers. STO films on both ZnS-buffered and SrS/MnS-buffered Si showed two growth orientations, (100) and (110). The temperature dependence of the growth orientation for STO films was different for the ZnS single-buffer layer in comparison with the SrS/MnS heterobuffer layers. (100) growth of STO films on SrS/MnS-buffered Si became dominant at high temperatures about 700 °C, while (100) growth of STO films on ZnS-buffered Si became dominant at a relatively low growth temperature of 550 °C. STO(100) films on ZnS-buffered and SrS/MnS-buffered Si showed lattice and domain matches for epitaxial relationships with [001]ZnS\\parallel[011]STO and SrS[001]\\parallel[011]STO, respectively via 45° in-plane rotation of STO films relative to both ZnS and SrS layers. The ZnS buffer layer contained many stacking faults because of the mismatch between ZnS and Si, however, those defects were terminated at the ZnS/STO interface. In contrast, the MnS buffer was very stable against stacking defect formation. Transmission electron microscopy measurements revealed the presence of a disordered region at the ZnS/Si and MnS/Si interfaces. Auger electron spectroscopy and transmission electron microscopy results showed that a good MnS/Si interface at the initial growth stage degraded to a SiS2-x-rich phase during MnS deposition and again into a SiO2-x-rich phase during STO deposition at the high growth temperature of 700 °C. It was also observed that STO on SrS/MnS-buffered Si showed a markedly high dielectric constant compared with that of STO on ZnS-buffered Si.

Aspects of electron-phonon interactions with strong forward scattering in FeSe Thin Films on SrTiO3 substrates

Science.gov (United States)

Wang, Y.; Nakatsukasa, K.; Rademaker, L.; Berlijn, T.; Johnston, S.

2016-05-01

Mono- and multilayer FeSe thin films grown on SrTiO3 and BiTiO3 substrates exhibit a greatly enhanced superconductivity over that found in bulk FeSe. A number of proposals have been advanced for the mechanism of this enhancement. One possibility is the introduction of a cross-interface electron-phonon (e-ph) interaction between the FeSe electrons and oxygen phonons in the substrates that is peaked in the forward scattering (small {q}) direction due to the two-dimensional nature of the interface system. Motivated by this, we explore the consequences of such an interaction on the superconducting state and electronic structure of a two-dimensional system using Migdal-Eliashberg (ME) theory. This interaction produces not only deviations from the expectations of conventional phonon-mediated pairing but also replica structures in the spectral function and density of states, as probed by angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and quasiparticle interference imaging. We also discuss the applicability of ME theory for a situation where the e-ph interaction is peaked at small momentum transfer and in the FeSe/STO system.

Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

Science.gov (United States)

2015-12-01

characteristics . Our work demonstrated a significant increase in the quality of the optimized STO thin films with respect to STO films grown prior to the MOCVD...deposition, the reactor and precursor supply lines were baked at 250 °C for at least 4 h with a total Ar carrier gas flow of 5,000 sccm to remove...S. Thermal leakage characteristics of Pt/SrTiO3/Pt structures. Journal of Vacuum Science & Technology A. 2008;26:555–557. 31. Ryen L, Olsson E

Sintering and Electrical Characterization of La and Nb Co‐doped SrTiO3 Electrode Materials for Solid Oxide Cell Applications

DEFF Research Database (Denmark)

Sudireddy, Bhaskar Reddy; Agersted, Karsten

2014-01-01

Single‐phase lanthanum and niobium co‐doped strontium titanate (Sr1–3x/2LaxTi0.9Nb0.1O3; x = 0–0.02) ceramics were prepared. Dilatometry in reducing atmosphere showed an increase in the sintering rate and sintered density with an increase in La amount. Microscopy of fractured surfaces of sintered...... samples showed that the average grain size increased drastically in reducing conditions with increasing La content (and associated A‐site vacancies). By incorporating 2 mol.% La, the electronic conductivity significantly improved from 80 to 135 S cm−1 at 1,000 °C, and even larger improvements were...... observed at lower temperatures. These observations demonstrate the flexibility in tailoring the microstructure and electronic transport properties by doping small amounts of La into the Nb‐doped SrTiO3 and show that Sr1–3x/2LaxTi0.9Nb0.1O3 is a potential electrode material for solid oxide cells....

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van, Tendeloo, G.; Wang, J.; Wu, Tao

2013-01-01

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates

Directory of Open Access Journals (Sweden)

C. Adamo

2015-06-01

Full Text Available We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100 Si by reactive molecular-beam epitaxy (MBE for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si. In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.

The Investigation of E-beam Deposited Titanium Dioxide and Calcium Titanate Thin Films

Directory of Open Access Journals (Sweden)

Kristina BOČKUTĖ

2013-09-01

Full Text Available Thin titanium dioxide and calcium titanate films were deposited using electron beam evaporation technique. The substrate temperature during the deposition was changed from room temperature to 600 °C to test its influence on TiO2 film formation and optical properties. The properties of CaTiO3 were investigated also. For the evaluation of the structural properties the formed thin ceramic films were studied by X-ray diffraction (XRD, energy dispersive spectrometry (EDS, scanning electron microscopy (SEM and atomic force microscopy (AFM. Optical properties of thin TiO2 ceramics were investigated using optical spectroscope and the experimental data were collected in the ultraviolet-visible and near-infrared ranges with a step width of 1 nm. Electrical properties were investigated by impedance spectroscopy.It was found that substrate temperature has influence on the formed thin films density. The density increased when the substrate temperature increased. Substrate temperature had influence on the crystallographic, structural and optical properties also. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.1805

Self-assembled single-phase perovskite nanocomposite thin films.

Science.gov (United States)

Kim, Hyun-Suk; Bi, Lei; Paik, Hanjong; Yang, Dae-Jin; Park, Yun Chang; Dionne, Gerald F; Ross, Caroline A

2010-02-10

Thin films of perovskite-structured oxides with general formula ABO(3) have great potential in electronic devices because of their unique properties, which include the high dielectric constant of titanates, (1) high-T(C) superconductivity in cuprates, (2) and colossal magnetoresistance in manganites. (3) These properties are intimately dependent on, and can therefore be tailored by, the microstructure, orientation, and strain state of the film. Here, we demonstrate the growth of cubic Sr(Ti,Fe)O(3) (STF) films with an unusual self-assembled nanocomposite microstructure consisting of (100) and (110)-oriented crystals, both of which grow epitaxially with respect to the Si substrate and which are therefore homoepitaxial with each other. These structures differ from previously reported self-assembled oxide nanocomposites, which consist either of two different materials (4-7) or of single-phase distorted-cubic materials that exhibit two or more variants. (8-12) Moreover, an epitaxial nanocomposite SrTiO(3) overlayer can be grown on the STF, extending the range of compositions over which this microstructure can be formed. This offers the potential for the implementation of self-organized optical/ferromagnetic or ferromagnetic/ferroelectric hybrid nanostructures integrated on technologically important Si substrates with applications in magnetooptical or spintronic devices.

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

KAUST Repository

Han, Wei

2013-07-08

There has been much interest in the injection and detection of spin-polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate single crystals and La-doped strontium titanate epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ∼100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the strontium titanate has a strong temperature dependence. This behaviour and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/strontium titanate interfaces, perhaps related to the formation of doping induced Ti 3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material. © 2013 Macmillan Publishers Limited. All rights reserved.

Rapid Synthesis and Formation Mechanism of Core-Shell-Structured La-Doped SrTiO3 with a Nb-Doped Shell

Directory of Open Access Journals (Sweden)

Nam-Hee Park

2015-07-01

Full Text Available To provide a convenient and practical synthesis process for metal ion doping on the surface of nanoparticles in an assembled nanostructure, core-shell-structured La-doped SrTiO3 nanocubes with a Nb-doped surface layer were synthesized via a rapid synthesis combining a rapid sol-precipitation and hydrothermal process. The La-doped SrTiO3 nanocubes were formed at room temperature by a rapid dissolution of NaOH pellets during the rapid sol-precipitation process, and the Nb-doped surface (shell along with Nb-rich edges formed on the core nanocubes via the hydrothermal process. The formation mechanism of the core-shell-structured nanocubes and their shape evolution as a function of the Nb doping level were investigated. The synthesized core-shell-structured nanocubes could be arranged face-to-face on a SiO2/Si substrate by a slow evaporation process, and this nanostructured 10 μm thick thin film showed a smooth surface.

Large tunneling anisotropic magnetoresistance in La0.7Sr0.3MnO3/pentacene/Cu structures prepared on SrTiO3 (110) substrates

Science.gov (United States)

Kamiya, Takeshi; Miyahara, Chihiro; Tada, Hirokazu

2017-01-01

We investigated tunneling anisotropic magnetoresistance (TAMR) at the interface between pentacene and La0.7Sr0.3MnO3 (LSMO) thin films prepared on SrTiO3 (STO) (110) substrates. The dependence of the TAMR ratio on the magnetic field strength was approximately ten times larger than that of the magnetic field angle at a high magnetic field. This large difference in the TAMR ratio is explained by the interface magnetic anisotropy of strain-induced LSMO thin films on a STO (110) substrate, which has an easy axis with an out-of-plane component. We also note that the TAMR owing to out-of-plane magnetization was positive at each angle of the in-plane magnetic field. This result implies that active control of the interface magnetic anisotropy between organic materials and ferromagnetic metals should realize nonvolatile and high-efficiency TAMR devices.

Aerosol chemistry in Titan's ionosphere: simultaneous growth and etching processes

Science.gov (United States)

Carrasco, Nathalie; Cernogora, Guy; Jomard, François; Etcheberry, Arnaud; Vigneron, Jackie

2016-10-01

Since the Cassini-CAPS measurements, organic aerosols are known to be present and formed at high altitudes in the diluted and partially ionized medium that is Titan's ionosphere [1]. This unexpected chemistry can be further investigated in the laboratory with plasma experiments simulating the complex ion-neutral chemistry starting from N2-CH4 [2]. Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan's atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan's atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan's atmosphere.The aim of the present study is to address if these two sorts of analogues are chemically equivalent or not, when produced in the same N2-CH4 plasma discharge. The chemical compositions of both these materials are measured by using elemental analysis, XPS analysis and Secondary Ion Mass Spectrometry. We find that films are homogeneous but significantly less rich in nitrogen and hydrogen than grains produced in the same experimental conditions. This surprising difference in their chemical compositions is explained by the efficient etching occurring on the films, which stay in the discharge during the whole plasma duration, whereas the grains are ejected after a few minutes [3]. The impact for our understanding of Titan's aerosols chemical composition is important. Our study shows that chemical growth and etching process are simultaneously at stake in Titan's ionosphere. The more the aerosols stay in the ionosphere, the more graphitized they get through etching process. In order to infer Titan's aerosols composition, our work highlights a need for constraints on the residence time of aerosols in Titan's ionosphere. [1] Waite et al. (2009) Science , 316, p. 870[2] Szopa et al. (2006) PSS, 54, p. 394[3] Carrasco et al. (2016) PSS, 128, p. 52

Two-dimensional thermoelectric Seebeck coefficient of SrTiO3-based superlattices

International Nuclear Information System (INIS)

Ohta, Hiromichi

2008-01-01

This review provides the origin of the unusually large thermoelectric Seebeck coefficient vertical stroke S vertical stroke of a two-dimensional electron gas confined within a unit cell layer thickness (∝0.4 nm) of a SrTi 0.8 Nb 0.2 O 3 layer of artificial superlattices of SrTiO 3 /SrTi 0.8 Nb 0.2 O 3 [H. Ohta et al., Nature Mater. 6, 129 (2007)]. The vertical stroke S vertical stroke 2D values of the[(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) y ] 20 superlattice increase proportional to y -0.5 , and reach 290 μV K -1 (y=1) at room temperature, which is ∝5 times larger than that of the SrTi 0.8 Nb 0.2 O 3 bulk (vertical stroke S vertical stroke 3D =61 μVK -1 ), proving that the density of states in the ground state for SrTiO 3 increases in inverse proportion to y. The critical barrier thickness for quantum electron confinement is also clarified to be 6.25 nm (16 unit cells of SrTiO 3 ). Significant structural changes are not observed in the superlattice after annealing at 900 K in a vacuum. The value of vertical stroke S vertical stroke 2D of the superlattice gradually increases with temperature and reaches 450 μVK -1 at 900 K, which is ∝3 times larger than that of bulk SrTi 0.8 Nb 0.2 O 3 . These observations provide clear evidence that the [(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) 1 ] 20 superlattice is stable and exhibits a giant vertical stroke S vertical stroke even at high temperature. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

Directory of Open Access Journals (Sweden)

Yaodong Yang

2010-01-01

Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

Study of thin films of carrier-doped strontium titanate with emphasis on their interfaces with organic thin films

Energy Technology Data Exchange (ETDEWEB)

Sato, Naoki [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)]. E-mail: naokis@e.kuicr.kyoto-u.ac.jp; Harada, Youichiro [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Terashima, Takahito [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Kanda, Ryoko [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Takano, Mikio [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)

2005-05-15

Fifty nanometer-thick metal-doped strontium titanate (M:STO, M = La and V) films deposited epitaxially on single crystalline STO substrates were characterized in comparison with indium tin oxide (ITO) covered glasses, to check their applicability to optically transparent anode materials for organic optoelectronic devices. M:STO, in particular V:STO, films turned out to have distinct surface flatness, needfully low electric resistivities and notably large work functions. While their optical transmittances are lower than those of ITOs at this moment, we suggest that M:STO films have a potential to take the place of ITO films. Further, we have observed energy level alignments for copper phthalocyanine thin films at the interface of V:STO.

Charge transfer mechanism for the formation of metallic states at the KTaO3/SrTiO3 interface

KAUST Repository

Nazir, Safdar

2011-03-29

The electronic and optical properties of the KTaO3/SrTiO3 heterointerface are analyzed by the full-potential linearized augmented plane-wave approach of density functional theory. Optimization of the atomic positions points at subordinate changes in the crystal structure and chemical bonding near the interface, which is due to a minimal lattice mismatch. The creation of metallic interface states thus is not affected by structural relaxation but can be explained by charge transfer between transition metal and oxygen atoms. It is to be expected that a charge transfer is likewise important for related interfaces such as LaAlO3/SrTiO3. The KTaO3/SrTiO3 system is ideal for disentangling the complex behavior of metallic interface states, since almost no structural relaxation takes place.

Thermal conductivity reduction in oxygen-deficient strontium titanates

NARCIS (Netherlands)

Yu, Choongho; Scullin, Matthew L.; Huijben, Mark; Ramesh, Ramamoorthy; Majumdar, Arun

2008-01-01

We report significant thermal conductivity reduction in oxygen-deficient lanthanum-doped strontium titanate (Sr1−xLaxTiO3−δ) films as compared to unreduced strontium titanates. Our experimental results suggest that the oxygen vacancies could have played an important role in the reduction. This could

Promoting Photocatalytic Overall Water Splitting by Controlled Magnesium Incorporation in SrTiO3 Photocatalysts

NARCIS (Netherlands)

Han, Kai; Lin, Yen Chun; Yang, Chia Min; Jong, Ronald; Mul, Guido; Mei, Bastian

2017-01-01

SrTiO3 is a well-known photocatalyst inducing overall water splitting when exposed to UV irradiation of wavelengths <370 nm. However, the apparent quantum efficiency of SrTiO3 is typically low, even when functionalized with nanoparticles of Pt or Ni@NiO. Here, we introduce a simple solid-state

Rectifying characteristics and magnetoresistance in La0.9Sr0.1MnO3/Nb-doped SrTiO3 heterojunctions

International Nuclear Information System (INIS)

Luo, Z.; Gao, J.

2007-01-01

Manganite-based heterojunctions have attracted lots of attention as one of the most promising practical applications of colossal magnetoresistance materials. In this work, heterojunctions were fabricated by depositing La 0.9 Sr 0.1 MnO 3 (LSMO) films on substrates of 0.7 wt.% Nb-doped SrTiO 3 using pulsed laser deposition technique. X-ray diffraction spectra confirmed that the grown films are of single phase and have an orientation with the c-axis perpendicular to the substrate surface. As temperature decreases, the resistivity of LSMO films first increases gradually and then increases abruptly at temperature lower than 150 K. These junctions showed clear rectifying characteristics and strong temperature dependent current-voltage relation. Diffusion voltage decreases as temperature increases. Under forward bias, current is proportion to exp(eV/nkT). Ideal factor increases quickly and tunneling current plays more and more important role as temperature decreases. At 50 K, tunneling current becomes nearly dominant. Large magnetoresistance was observed. The sign and value of such magnetoresistance depends on the direction and value of current

Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

Science.gov (United States)

Md. Sadaf, Sharif; Mostafa Bourim, El; Liu, Xinjun; Hasan Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang

2012-03-01

We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures

International Nuclear Information System (INIS)

Hu, Chengqing; Park, Keun Woo; Yu, Edward T.; Posadas, Agham; Demkov, Alexander A.; Jordan-Sweet, Jean L.

2013-01-01

A LaCoO 3 /SrTiO 3 heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO 3 , leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO 3 layer on strain. Below the Curie temperature of the LaCoO 3 layer, this effect leads to modulation of resistance in LaCoO 3 as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO 3 . Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO 3 layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO 3 grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device

Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

International Nuclear Information System (INIS)

Lecarpentier, F.; Daglish, M.; Kemmitt, T.

2001-01-01

Ferroelectric thin films of lead zirconate titanate Pb(Zr x Ti 1-x )O 3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

Ultrasonic force microscopy on poly(vinyl alcohol)/SrTiO3 nano-perovskites hybrid films

International Nuclear Information System (INIS)

Marino, Salvatore; Joshi, Girish M.; Lusuardi, Angelo; Cuberes, M. Teresa

2014-01-01

Atomic Force Microscopy (AFM) and Ultrasonic Force Microscopy (UFM) have been applied to the characterization of composite samples formed by SrTiO 3 (STO) nanoparticles (NPs) and polyvinyl alcohol (PVA). The morphological features of the STO NPs were much better resolved using UFM than contact-mode AFM topography. For high STO concentrations the individual STO NPs formed nanoclusters, which gathered in microaggregates. The STO aggregates, covered by PVA, exhibited no AFM frictional contrast, but were clearly distinguished from the PVA matrix using UFM. Similar aggregation was observed for NPs in the composite samples and for NPs deposited on top of a flat silicon substrate from milliQ water solution in the absence of polymer. In the hybrid films, most STO nanoparticles typically presented a lower UFM contrast than the PVA matrix, even though stiffer sample regions such as STO should give rise to a higher UFM contrast. STO NPs with intermediate contrast were characterized by an UFM halo of lower contrast at the PVA/STO interface. The results may be explained by considering that ultrasound is effectively damped on the nanometer scale at PVA/STO interfaces. According to our data, the nanoscale ultrasonic response at the PVA/STO interface plays a fundamental role in the UFM image contrast. - Highlights: • Hybrid films of SrTiO 3 nanoparticles and PVA have been studied using AFM, FFM and UFM. • The SrTiO 3 nanoparticles form nano-clusters from 3 to 5 individuals, which for high concentrations gather in micro-aggregates. • Most SrTiO 3 nanoparticles in the composite samples exhibited a lower (softer) UFM contrast than the PVA matrix. • In the UFM images, SrTiO 3 nanoparticles with intermediate contrast are delimited by a lower-contrast halo at the PVA boundary. • The nanoscale ultrasonic response at the PVA/SrTiO 3 interface plays a fundamental role in the UFM image contrast

Magnetic and electronic properties of SrMnO3 thin films

Science.gov (United States)

Mandal, Arup Kumar; Panchal, Gyanendra; Choudhary, R. J.; Phase, D. M.

2018-05-01

Single phase hexagonal bulk SrMnO3 (SMO) was prepared by solid state route and it was used for depositing thin films by pulsed laser deposition (PLD) technique on single crystalline (100) oriented SrTiO3 (STO) substrate. X-ray diffraction shows that the thin film is deposited in cubic SrMnO3 phase. From X-ray absorption at the Mn L edge we observed the mixed valency of Mn (Mn3+& Mn4+) due to strain induced by the lattice mismatching between SMO and STO. Due to this mixed valency of Mn ion in SMO film, the ferromagnetic nature is observed at lower temperature because of double exchange. After post annealing with very low oxygen partial pressure, magnetic and electronic property of SMO films are effectively modified.

Temperature effect on the retention of U(VI) by SrTiO3

International Nuclear Information System (INIS)

Garcia Rosales, G.

2007-11-01

The purpose of this research was the study of the interaction mechanisms between U(VI) ions and SrTiO 3 surfaces versus pH and temperature: 25, 50, 75 and 90 C. Firstly, a physicochemical characterization was realized (DRX, MEB, FTIR) and the surface site density was determined. The potentiometric titration data were simulated, for each temperature, using the constant capacitance model and taking into account bath protonation of the ≡Sr-OH surface sites and deprotonation of the ≡Ti-OH ones (one pK a model). Both enthalpy and entropy changes, corresponding to the surface acid-base reactions, were evaluated using the van't Hoff relation. U(VI) was sorbed onto SrTiO 3 powder in the pH range 0.5-5.0 with an U(VI) initial concentration 1.10 -4 M. By TRLIFS two U(VI) complexes were detected associated with two lifetime values (60 ± 5 and 12 ± 2 μs at 25 C). The sorption edges were simulated using FITEQL 4.0 software. The surface complexation constants of the system SrTiO 3 /U(VI) between 25 and 90 C temperature range were thus obtained with the constant capacitance model considering two reactive surface sites. It reveals that two types of surface complex, namely [(≡SrOH)(≡TiOH)UO 2 ] 2+ and [(≡TiOH)(≡TiO)UO 2+ ] 2+ , are needed to properly describe the experimental observations. By application of the van't Hoff equation, Delta R S 0 and Delta R H 0 were obtained, which indicated an endothermic sorption process. Finally, an energy transfer study was realised by TRLIFS. The energy transfer between Tb 3+ and Eu 3+ ions sorbed onto SrTiO 3 powders were investigated. The results showed that the energy transfer between Tb 3+ and Eu 3+ is a non-radiative process and follows a dipole-dipole type interaction. A formalism based on the Dexter and the Inokuti-Hirayama theories was used to calculate the distances (2,7-3,4 Angstroms between Tb 3+ and Eu 3+ onto SrTiO 3 surface. (author)

Preparation of SrCoOx thin films on LaAlO3 substrate and their reversible redox process at moderate temperatures

Science.gov (United States)

Hao, L.; Zhang, Z. F.; Xie, X. N.; Wang, H. R.; Yu, Q. X.; Zhu, H.

2015-10-01

Using magnetron sputtering and annealing techniques, we have prepared SrCoOx films on LaAlO3 and SrTiO3 substrates. Distinctly different structures of the films have been found on the two substrates. It is suggested that positive lattice mismatch between film and substrate promotes SrCoO2.5 films with an orthorhombic structure grown on SrTiO3 substrate, whereas negative lattice mismatch from LaAlO3 substrate is in favor of increasing the valence state of Co and thus the growth of oxygen-rich SrCoOx with a tetragonal structure. In addition to the structural characterization, magnetic and electrical measurements confirm that the oxygen content x is between 2.75 and 2.88 for the latter. Reversibility of the topotactic phase transformation between SrCoO2.5 and the oxygen-rich SrCoOx films has also been studied by changing the oxygen pressure during annealing process. Even in the presence of a negative lattice mismatch, the results reveal that the tetragonal SrCoOx films on LaAlO3 substrate retain high oxygen mobility identified before in cubic SrCoOx films.

Metal-insulator transition induced in CaVO3 thin films

International Nuclear Information System (INIS)

Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

2013-01-01

Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

Atomic structures of Ruddlesden-Popper faults in LaCoO3/SrRuO3 multilayer thin films induced by epitaxial strain

Science.gov (United States)

Wang, Wei; Zhang, Hui; Shen, Xi; Guan, Xiangxiang; Yao, Yuan; Wang, Yanguo; Sun, Jirong; Yu, Richeng

2018-05-01

In this paper, scanning transmission electron microscopy is used to study the microstructures of the defects in LaCoO3/SrRuO3 multilayer films grown on the SrTiO3 substrates, and these films have different thickness of SrRuO3 (SRO) layers. Several types of Ruddlesden-Popper (R.P.) faults at an atomic level are found, and these chemical composition fluctuations in the growth process are induced by strain fields originating from the film-film and film-substrate lattice mismatches. Furthermore, we propose four types of structural models based on the atomic arrangements of the R.P. planar faults, which severely affect the functional properties of the films.

Plasma plume effects on the conductivity of amorphous-LaAlO3/SrTiO3 interfaces grown by pulsed laser deposition in O2 and Ar

DEFF Research Database (Denmark)

Sambri, A.; Christensen, Dennis; Trier, Felix

2012-01-01

Amorphous-LaAlO3/SrTiO3 interfaces exhibit metallic conductivity similar to those found for the extensively studied crystalline-LaAlO3/SrTiO3 interfaces. Here, we investigate the conductivity of the amorphous-LaAlO3/SrTiO3 interfaces grown in different pressures of O2 and Ar background gases...

Magnetism Control by Doping in LaAlO3/SrTiO3 Heterointerfaces.

Science.gov (United States)

Yan, Hong; Zhang, Zhaoting; Wang, Shuanhu; Wei, Xiangyang; Chen, Changle; Jin, Kexin

2018-04-25

Magnetic two-dimensional electron gases at the oxide interfaces are always one of the key issues in spintronics, giving rise to intriguing magnetotransport properties. However, reports about magnetic two-dimensional electron gases remain elusive. Here, we obtain the magnetic order of LaAlO 3 /SrTiO 3 systems by introducing magnetic dopants at the La site. The transport properties with a characteristic of metallic behavior at the interfaces are investigated. More significantly, magnetic-doped samples exhibit obvious magnetic hysteresis loops and the mobility is enhanced. Meanwhile, the photoresponsive experiments are realized by irradiating all samples with a 360 nm light. Compared to magnetism, the effects of dopants on photoresponsive and relaxation properties are negligible because the behavior originates from SrTiO 3 substrates. This work paves a way for revealing and better controlling the magnetic properties of oxide heterointerfaces.

Magnetism and metal-insulator transition in oxygen deficient SrTiO3

Science.gov (United States)

Lopez-Bezanilla, Alejandro; Ganesh, P.; Littlewood, Peter

2015-03-01

We report new findings in the electronic structure and magnetism of oxygen vacancies in SrTiO3. By means of first-principles calculations we show that the appearance of magnetism in oxygen-deficient SrTiO3 is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. While an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state with emergent local moments. Strong local lattice distortions enhance the binding of this state. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient SrTiO3, which may have important implications in the design of switchable magneto-optic devices. AL-B and PBL were supported by DOE-BES under Contract No. DE-AC02-06CH11357. PG was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT- Battelle, LLC, for the US Department of Energy.

Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ films

International Nuclear Information System (INIS)

Giess, E.A.; Sandstrom, R.L.; Gallagher, W.J.; Gupta, A.; Shinde, S.L.; Cook, R.F.; Cooper, E.L.; O'Sullivan, E.M.J.; Roldan, J.M.; Segmuller, A.D.; Angilello, J.

1990-01-01

This paper reports on the use of lanthanide gallate perovskite-type substrates for the deposition of epitaxial, high-T c superconducting Ba 2 YCu 3 O 7-δ (BYCO) films. They were also found to have moderate dielectric constants (∼25 compared to ∼ 277 for SrTiO 3 ). This study was undertaken to further explore the use of LaGaO 3 , NdGaO 3 , SrTiO 3 , MgO, and Y-stabilized ZrO 2 substrates, prepared from single-crystal joules grown by several suppliers using the Czochralski method. Films were prepared by cylindrical magnetron sputtering and laser ablation. Substrate evaluations included measurement of dielectric constant and loss, thermal expansion, and mechanical hardness and toughness. In addition to their moderate dielectric constants, they were found to have satisfactory mechanical properties, except for the twinning tendency of LaGaO 3 . Lattice mismatch strains were calculated for orthorhombic BYCO films on a number of substrates. NdGaO 3 was found to have the best lattice match with BYCO, and is now available twin-free

Surface resistance of YBa2Cu3O7 films deposited on LaGaO3 substrates

International Nuclear Information System (INIS)

Cooke, D.W.; Gray, E.R.; Houlton, R.J.; Javadi, H.H.S.; Maez, M.A.; Bennett, B.L.; Rusnak, B.; Meyer, E.A.; Arendt, P.N.; Beery, J.G.; Brown, D.R.; Garzon, F.H.; Raistriek, I.D.; Bolmaro, B.; Elliott, N.E.; Rollett, A.D.; Klein, N.; Muller, G.; Orbach, S.; Piel, H.; Josefowicz, J.Y.; Rensch, O.B.; Drabeck, L.; Gruner, G.

1989-01-01

Superconducting films of YBa 2 Cu 3 O 7 deposited onto LaGaO 3 substrates were prepared by e-beam and magnetron sputtering techniques. Surface resistance measurements made at 22 GHz, 86 GHz, and 148 GHz show that these films are superior to those deposited by similar techniques onto SrTiO 3 . Typical surface resistance values measured at 22 GHz and 12 K are ∼2 m(cgom) with the lowest value being 0.2 m(cgom), which is only 2 to 4 times higher than Nb. The surface resistance is proportional to the square of the measuring frequency

Native SrTiO3 (001) surface layer from resonant Ti L2,3 reflectance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Valvidares, Manuel; Huijben, Mark; Yu, Pu; Ramesh, Ramamoorthy; Kortright, Jeffrey

2010-11-03

We quantitatively model resonant Ti L2,3 reflectivity Rs,p(q, hn) from several SrTiO3 (001) single crystals having different initial surface preparations and stored in ambient conditions before and between measurements. All samples exhibit unexpected 300 K Rs(hn) - Rp(hn) anisotropy corresponding to weak linear dichroism and tetragonal distortion of the TiO6 octahedra indicating a surface layer with properties different from cubic SrTiO3. Oscillations in Rs(q) confirm a ubiquitous surface layer 2-3 nm thick that evolves over a range of time scales. Resonant optical constant spectra derived from Rs,p(hn) assuming a uniform sample are refined using a single surface layer to fit measured Rs(q). Differences in surface layer and bulk optical properties indicate that the surface is significantly depleted in Sr and enriched in Ti and O. While consistent with the tendency of SrTiO3 surfaces toward non-stoichiometry, this layer does not conform simply to existing models for the near surface region and apparently forms via room temperature surface reactions with the ambient. This new quantitative spectral modeling approach is generally applicable and has potential to study near-surface properties of a variety of systems with unique chemical and electronic sensitivities.

Prediction of two-dimensional electron gas mediated magnetoelectric coupling at ferroelectric PbTiO3/SrTiO3 heterostructures

Science.gov (United States)

Wei, Lan-ying; Lian, Chao; Meng, Sheng

2017-05-01

First-principles calculations predict the emergence of magnetoelectric coupling mediated by two-dimensional electron gas (2DEG) at the ferroelectric PbTiO3/SrTiO3 heterostructure. Free electrons endowed by naturally existing oxygen vacancies in SrTiO3 are driven to the heterostructure interface under the polarizing field of ferroelectric PbTiO3 to form a 2DEG. The electrons are captured by interfacial Ti atoms, which surprisingly exhibits ferromagnetism even at room temperature with a small critical density of ˜15.5 μ C /cm2 . The ferroelectricity-controlled ferromagnetism mediated by interfacial 2DEG shows strong magnetoelectric coupling strength, enabling convenient control of magnetism by electric field and vice versa. The PbTiO3/SrTiO3 heterostructure is cheap, easily grown, and controllable, promising future applications in low-cost spintronics and information storage at ambient condition.

Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

International Nuclear Information System (INIS)

Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

2015-01-01

Electron doped SrTiO 3 , a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO 3 systems show reasonably strong rectification even when SrTiO 3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO x in between the metal and n-SrTiO 3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO 3 ) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO 3 . The non-linear permittivity of n-SrTiO 3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

KAUST Repository

Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Darroudi, Taghi; Zeng, Xiaoyu; Alshareef, Husam N.; Tritt, Terry M.

2015-01-01

We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

KAUST Repository

Mehdizadeh Dehkordi, Arash

2015-08-15

We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

Origin of thermally stable ferroelectricity in a porous barium titanate thin film synthesized through block copolymer templating

Directory of Open Access Journals (Sweden)

Norihiro Suzuki

2017-07-01

Full Text Available A porous barium titanate (BaTiO3 thin film was chemically synthesized using a surfactant-assisted sol-gel method in which micelles of amphipathic diblock copolymers served as structure-directing agents. In the Raman spectrum of the porous BaTiO3 thin film, a peak corresponding to the ferroelectric tetragonal phase was observed at around 710 cm−1, and it remained stable at much higher temperature than the Curie temperature of bulk single-crystal BaTiO3 (∼130 °C. Measurements revealed that the ferroelectricity of the BaTiO3 thin film has high thermal stability. By analyzing high-resolution transmission electron microscope images of the BaTiO3 thin film by the fast Fourier transform mapping method, the spatial distribution of stress in the BaTiO3 framework was clearly visualized. Careful analysis also indicated that the porosity in the BaTiO3 thin film introduced anisotropic compressive stress, which deformed the crystals. The resulting elongated unit cell caused further displacement of the Ti4+ cation from the center of the lattice. This displacement increased the electric dipole moment of the BaTiO3 thin film, effectively enhancing its ferro(piezoelectricity.

Adhesion strength of lead zirconate titanate sol-gel thin films

Energy Technology Data Exchange (ETDEWEB)

Berfield, Thomas A., E-mail: tom.berfield@louisville.edu [Department of Mechanical Engineering, University of Louisville, Louisville, KY 40292 (United States); Kitey, Rajesh [Department of Aerospace Engineering, Indian Institute of Technology Kanpur, Kanpur (India); Kandula, Soma S. [Intel Corporation, Portland, OR (United States)

2016-01-01

The adhesion strength between a thin film and substrate is often the critical parameter that controls the initiation as well as the mode of film failure. In this work, a laser-based spallation method is used to determine the adhesion strength of “as deposited” lead zirconate titanate (PZT) sol-gel thin films on the two functionally different substrates. For the first case, PZT sol-gel film is deposited onto bare Si/SiO{sub 2} substrates via spin casting. The extremely high adhesion strength between the film and the substrate necessitated an additional platinum mass superlayer to be deposited on top of the PZT film in order to induce interfacial failure. For the superlayer film system, a hybrid experimental/numerical method is employed for determining the substrate/film interfacial strength, quantified to be in the range of 460–480 MPa. A second substrate variation with lower adhesion strength is also prepared by applying a self-assembled octadecyltrichlorosilane (ODS) monolayer to the Si/SiO{sub 2} substrate prior to the film deposition. For the monolayer-coated substrate case, the adhesion strength is observed to be significantly lower (54.7 MPa) when compared to the earlier case. - Highlights: • A non-contact laser spallation method is used to determine PZT film adhesion. • A mediated self-assembled monolayer is shown to greatly reduce interface strength. • Adhesion strength for even well-bonded thin films was found using a superlayer.

Characterization of three-dimensional grain boundary topography in a YBa2Cu3O7-d thin film bicrystal grown on a SrTiO3 substrate

International Nuclear Information System (INIS)

Ayache, J.; Thorel, A.; Lesueur, J.; Dahmen, U.

1998-01-01

The topography and crystallography of YBa 2 Cu 3 O 7-d (YBCO) bicrystal films grown epitaxially on oriented SrTiO 3 (STO) bicrystals have been characterized by scanning and transmission electron microscopies (SEM and TEM) and atomic force microscopy (AFM). The YBCO films were formed by laser ablation on melt-grown Σ13 STO bicrystals with a misorientation of 24 degree around the left-angle 001 right-angle tilt axis. In agreement with previous reports, TEM analysis revealed that the grain boundary in the film did not always follow the planar substrate grain boundary faithfully, but undulated about the average boundary plane. High resolution electron microscopy observations of the apparently complex undulating boundary structures could be explained as a result of an overlap between different orientation variants of the orthorhombic YBCO film. Cross correlation between SEM, AFM, and TEM imaging gave a clear evidence that an island growth mechanism is responsible for the observed grain boundary structure and morphology for which a schematic model is presented. It is seen that meandering of the YBCO grain boundary (GB) is necessarily coupled to a wide range of inclination of the GB plane in the z direction. The implications of this interfacial structure for the behavior of GB based Josephson junctions are discussed and compared to models proposed in the literature. It is also seen that inclination of the GB may be responsible for the poor correlation usually found in the literature between calculations and experimental curves of current density J c versus the GB angle since the most elaborate models proposed up to now take into account only pure tilt GB plane facets, that is to say facets in the zone of the tilt axis. Moreover, such a GB structure may affect the interpretation of recent phase sensitive experiments done on bicrystal or tricrystal high T c superconductors to determine the symmetry of the order parameter. copyright 1998 American Institute of Physics

Thermal infrared and microwave absorbing properties of SrTiO3/SrFe12O19/polyaniline nanocomposites

International Nuclear Information System (INIS)

Hosseini, Seyed Hossein; Zamani, Parisa; Mousavi, S.Y.

2015-01-01

Graphical abstract: We have developed a new perspective of applications and properties of conducting polymers. The combination of absorption ability prepared nanocomposites in the present of PANI display a great potential in organization of shielding structures into thermal IR and microwave. Further investigations using other conducting polymers to demonstrate their capability for advance thermal IR and microwave shielding devices is under way. The application of these samples may improve the IR thermographic detection, catalysis, sensors, magnetic data storage, electromagnetic resonance wave absorption, photonic crystals, and microelectronic devices and military aspects. - Highlights: • The SrTiO 3 /SrFe 12 O 19 /PANI exhibited electric and electromagnetic properties. • The SrTiO 3 /SrFe 12 O 19 /PANI has shielding structures into thermal IR and microwave. • Increasing weight ratios and thicknesses will increase thermal IR ability. • Increasing weight ratios and thicknesses will increase microwave absorption ability. - Abstract: Polyaniline (PANI) as a unique polymer that also has electromagnetic absorption used as the substrate. In this research, SrTiO 3 was synthesized as IR absorbent and core and then SrFe 12 O 19 as microwave absorbent was prepared on SrTiO 3 via co-precipitation method as the first shell. As the next step, PANI was coated on SrTiO 3 /SrFe 12 O 19 nanoparticles via in situ polymerization by multi core–shell structures (SrTiO 3 /SrFe 12 O 19 /PANI). Nanometer size and structures of samples were measured by TEM, XRD and FTIR. Morphology of nanocomposite was showed by SEM images. The magnetic and electric properties were also performed by VSM and four probe techniques. Thermal infrared (IR) absorption and microwave reflection loss of nanocomposites were investigated at 10–40 μm and 8–12 GHz, IR and microwave frequencies, respectively. The results showed that the SrTiO 3 /SrFe 12 O 19 /PANI nanocomposites have good compatible

Comparison of barium titanate thin films prepared by inkjet printing and spin coating

Directory of Open Access Journals (Sweden)

Jelena Vukmirović

2015-09-01

Full Text Available In this paper, barium titanate films were prepared by different deposition techniques (spin coating, office Epson inkjet printer and commercial Dimatix inkjet printer. As inkjet technique requires special rheological properties of inks the first part of the study deals with the preparation of inks, whereas the second part examines and compares structural characteristics of the deposited films. Inks were synthesized by sol-gel method and parameters such as viscosity, particle size and surface tension were measured. Deposited films were examined by optical and scanning electron microscopy, XRD analysis and Raman spectroscopy. The findings consider advantages and disadvantages of the particular deposition techniques.

Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate

Directory of Open Access Journals (Sweden)

Robert Mamazza

2012-04-01

Full Text Available Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and parallel resistance data measured as a function of applied DC bias, polarization versus applied electric field strength and DC load/unload experiments. These capacitors exhibited significant leakage (in the range 8–210 μA/cm2 and dielectric loss. Measured breakdown strength for the sputtered doped barium titanate films was in the range 200 kV/cm −2 MV/cm. For all devices tested, we observed clear evidence for dielectric saturation at applied electric field strengths above 100 kV/cm: saturated polarization was in the range 8–15 μC/cm2. When cycled under DC conditions, the maximum energy density measured for any of the capacitors tested here was ~4.7 × 10−2 W-h/liter based on the volume of the dielectric material only. This corresponds to a specific energy of ~8 × 10−3 W-h/kg, again calculated on a dielectric-only basis. These results are compared to those reported by other authors and a simple theoretical treatment provided that quantifies the maximum energy that can be stored in these and similar devices as a function of dielectric strength and saturation polarization. Finally, a predictive model is developed to provide guidance on how to tailor the relative permittivities of high-k dielectrics in order to optimize their energy storage capacities.

Effect of oxygen partial pressure on texture development in lead zirconate titanate thin films processed from metalorganic precursors

International Nuclear Information System (INIS)

Norton, Jarrod L.; Liedl, Gerald L.; Slamovich, Elliott B.

1999-01-01

Metalorganic liquid precursors were used to examine the effects of processing atmosphere on texture development in oriented Pb(Zr 0.60 Ti 0.40 )O 3 thin films. After removal of organic ligands via pyrolysis, the films were heated at 25 degree sign C/min in a 5% H 2 /Ar atmosphere until a switching temperature, after which the atmosphere was switched to pure oxygen. The films were heated to a maximum temperature of 650 degree sign C with switching temperatures ranging from 450 to 600 degree sign C. The degree of (111) orientation in the lead zirconate titanate (PZT) films increased with increasing switching temperature, resulting in highly textured (111) PZT films. These results suggest that atmosphere control plays a significant role in texture development during rapid thermal processing. (c) 1999 Materials Research Society

Chemical deposition of La0.7Ca0.3MnO3±δ films on ceramic substrates

Directory of Open Access Journals (Sweden)

Cássio Morilla-Santos

2011-01-01

Full Text Available In this paper, it is reported the growth of La0.7Ca0.3MnO3±δ films using a chemical solution deposition method (CSD by the spin-coating technique. Such solution was prepared through a route based on modified polymeric precursor method. Spin-coating deposition on different ceramic substrates was performed and analyzed by X-ray diffraction (XRD, scanning electron microscopy (SEM and X-ray photoelectron spectroscopy (XPS. The magnetic response of the prepared specimens was studied using a SQUID magnetometer. The obtained results indicated uniform deposition on SrTiO3 and LaAlO3 substrates with similar characteristics. Furthermore, significant differences were detected in the Mn3+/Mn4+ valence ratio and a corresponding diverse magnetic response was observed. The sample prepared on SrTiO3 and LaAlO3 presented a critical temperature around 270 K as expected.

Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctions

Science.gov (United States)

Singh, Pooja; Rout, P. K.; Singh, Manju; Rakshit, R. K.; Dogra, Anjana

2015-09-01

We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal-ferroelectric semiconductor junctions. The current (I)-voltage (V) measurements across the junctions comprising of 20-500 nm thick BaTiO3 and conducting bottom electrode (Nb: SrTiO3 substrate or La2/3Ca1/3MnO3 buffer layer) demonstrate the space charge limited conduction. Further analysis indicates a reduction in the ratio of free to trapped carriers with increasing thickness in spite of decreasing trap density. Such behaviour arises the deepening of the shallow trap levels (I-V curves implies a bipolar resistive switching behaviour, which can be explained in terms of charge trapping and de-trapping process.

High mobility half-metallicity in the (LaMnO3)2/(SrTiO3)8 superlattice

KAUST Repository

Cossu, Fabrizio

2013-01-28

First principles calculations have been performed to investigate the LaMnO3/SrTiO3 superlattice. Structural relaxation within the generalized gradient approximation results in no significant tiltings or rotations of oxygen octahedra, but in distinct distortions in the SrTiO3 region. Taking into account the onsite Coulomb interaction, we find that the Mn spins order ferromagnetically, in contrast to the antiferromagnetic state of bulk LaMnO3. Most importantly, the interface strain combined with charge transfer across the interface induces half-metallicity within the MnO2 layers. The superlattice is particulary interesting for spintronics applications because the half-metallic states are characterized by an extraordinary high mobility.

High mobility half-metallicity in the (LaMnO3)2/(SrTiO3)8 superlattice

KAUST Repository

Cossu, Fabrizio; Schwingenschlö gl, Udo; Singh, Nirpendra

2013-01-01

First principles calculations have been performed to investigate the LaMnO3/SrTiO3 superlattice. Structural relaxation within the generalized gradient approximation results in no significant tiltings or rotations of oxygen octahedra, but in distinct distortions in the SrTiO3 region. Taking into account the onsite Coulomb interaction, we find that the Mn spins order ferromagnetically, in contrast to the antiferromagnetic state of bulk LaMnO3. Most importantly, the interface strain combined with charge transfer across the interface induces half-metallicity within the MnO2 layers. The superlattice is particulary interesting for spintronics applications because the half-metallic states are characterized by an extraordinary high mobility.

Strain-controlled optical absorption in epitaxial ferroelectric BaTiO.sub.3./sub. films

Czech Academy of Sciences Publication Activity Database

Chernova, Ekaterina; Pacherová, Oliva; Chvostová, Dagmar; Dejneka, Alexandr; Kocourek, Tomáš; Jelínek, Miroslav; Tyunina, Marina

2015-01-01

Roč. 106, č. 19 (2015), "192903-1"-"192903-4" ISSN 0003-6951 R&D Projects: GA ČR GA15-13778S; GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : thin-films * polarization * evolution * SrTiO 3 Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.142, year: 2015

Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

Science.gov (United States)

Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

1988-03-01

High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

Texturing of sodium bismuth titanate-barium titanate ceramics by templated grain growth

Science.gov (United States)

Yilmaz, Huseyin

2002-01-01

Sodium bismuth titanate modified with barium titanate, (Na1/2Bi 1/2)TiO3-BaTiO3 (NBT-BT), is a candidate lead-free piezoelectric material which has been shown to have comparatively high piezoelectric response. In this work, textured (Na1/2Bi1/2)TiO 3-BaTiO3 (5.5mol% BaTiO3) ceramics with pc (where pc denotes the pseudocubic perovskite cell) orientation were fabricated by Templated Grain Growth (TGG) or Reactive Templated Grain Growth (RTGG) using anisotropically shaped template particles. In the case of TGG, molten salt synthesized SrTiO3 platelets were tape cast with a (Na1/2Bi1/2)TiO3-5.5mol%BaTiO3 powder and sintered at 1200°C for up to 12 hours. For the RTGG approach, Bi4Ti3O12 (BiT) platelets were tape cast with a Na2CO3, Bi2O3, TiO 2, and BaCO3 powder mixture and reactively sintered. The TGG approach using SrTiO3 templates gave stronger texture along [001] compared to the RTGG approach using BiT templates. The textured ceramics were characterized by X-ray and electron backscatter diffraction for the quality of texture. The texture function was quantified by the Lotgering factor, rocking curve, pole figures, inverse pole figures, and orientation imaging microscopy. Electrical and electromechanical property characterization of randomly oriented and pc textured (Na1/2Bi1/2)TiO 3-5.5 mol% BaTiO3 rhombohedral ceramics showed 0.26% strain at 70 kV/cm, d33 coefficients over 500 pC/N have been obtained for highly textured samples (f ˜ 90%). The piezoelectric coefficient from Berlincourt was d33 ˜ 200 pC/N. The materials show considerable hysteresis. The presence of hysteresis in the unipolar-electric field curve is probably linked to the ferroelastic phase transition seen in the (Na 1/2Bi1/2)TiO3 system on cooling from high temperature at ˜520°C. The macroscopic physical properties (remanent polarization, dielectric constant, and piezoelectric coefficient) of random and textured ([001] pc) rhombohedral perovskites were estimated by linear averaging of single

Development of a metrology method for composition and thickness of barium strontium titanate thin films

International Nuclear Information System (INIS)

Remmel, Thomas; Werho, Dennis; Liu, Ran; Chu, Peir

1998-01-01

Thin films of barium strontium titanate (BST) are being investigated as the charge storage dielectric in advanced memory devices, due to their promise for high dielectric constant. Since the capacitance of BST films is a function of both stoichiometry and thickness, implementation into manufacturing requires precise metrology methods to monitor both of these properties. This is no small challenge, considering the BST film thicknesses are 60 nm or less. A metrology method was developed based on X-ray Fluorescence and applied to the measurement of stoichiometry and thickness of BST thin films in a variety of applications

LCAO calculations of SrTiO3 nanotubes

International Nuclear Information System (INIS)

Evarestov, Robert; Bandura, Andrei

2011-01-01

The large-scale first-principles simulation of the structure and stability of SrTiO 3 nanotubes is performed for the first time using the periodic PBE0 LCAO method. The initial structures of the nanotubes have been obtained by the rolling up of the stoichiometric SrTiO 3 slabs consisting of two or four alternating (001) SrO and TiO 2 atomic planes. Nanotubes (NTs) with chiralities (n,0) and (n,n) have been studied. Two different NTs were constructed for each chirality: (I) with SrO outer shell, and (II) with TiO 2 outer shell. Positions of all atoms have been optimized to obtain the most stable NT structure . In the majority of considered cases the inner or outer TiO 2 shells of NT undergo a considerable reconstruction due to shrinkage or stretching of interatomic distances in the initial cubic perovskite structure. There were found two types of surface reconstruction: (1) breaking of Ti-O bonds with creating of Ti = O titanyl groups in outer surface; (2) inner surface folding due to Ti-O-Ti bending. Based on strain energy calculations the largest stability was found for (n,0) NTs with TiO 2 outer shell.

Microscopic characterization of Fe nanoparticles formed on SrTiO3(001 and SrTiO3(110 surfaces

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Miyoko Tanaka

2016-06-01

Full Text Available Fe nanoparticles grown on SrTiO3 (STO {001} and {110} surfaces at room temperature have been studied in ultrahigh vacuum by means of transmission electron microscopy and scanning tunnelling microscopy. It was shown that some Fe nanoparticles grow epitaxially. They exhibit a modified Wulff shape: nanoparticles on STO {001} surfaces have truncated pyramid shapes while those on STO {110} surfaces have hexagonal shapes. From profile-view TEM images, approximate values of the adhesion energy of the nanoparticles for both shapes are obtained.

Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

KAUST Repository

Sarath Kumar, S. R.; Hedhili, Mohamed N.; Cha, Dong Kyu; Tritt, Terry M.; Alshareef, Husam N.

2014-01-01

A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

KAUST Repository

Sarath Kumar, S. R.

2014-04-22

A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

Parallel charge sheets of electron liquid and gas in La0.5Sr0.5TiO3/SrTiO3 heterostructures

Science.gov (United States)

Renshaw Wang, X.; Sun, L.; Huang, Z.; Lü, W. M.; Motapothula, M.; Annadi, A.; Liu, Z. Q.; Zeng, S. W.; Venkatesan, T.; Ariando

2015-12-01

We show here a new phenomenon in La0.5Sr0.5TiO3/SrTiO3 (LSTO/STO) heterostructures; that is a coexistence of three-dimensional electron liquid (3DEL) and 2D electron gas (2DEG), separated by an intervening insulating LSTO layer. The two types of carriers were revealed through multi-channel analysis of the evolution of nonlinear Hall effect as a function of film thickness, temperature and back gate voltage. We demonstrate that the 3D electron originates from La doping in LSTO film and the 2D electron at the surface of STO is due to the polar field in the intervening insulating layer. As the film thickness is reduced below a critical thickness of 6 unit cells (uc), an abrupt metal-to-insulator transition (MIT) occurs without an intermediate semiconducting state. The properties of the LSTO layer grown on different substrates suggest that the insulating phase of the intervening layer is a result of interface strain induced by the lattice mismatch between the film and substrate. Further, by fitting the magnetoresistance (MR) curves, the 6 unit cell thick LSTO is shown to exhibit spin-orbital coupling. These observations point to new functionalities, in addition to magnetism and superconductivity in STO-based systems, which could be exploited in a multifunctional context.

Structural and magnetic anisotropy in the epitaxial FeV2O4 (110) spinel thin films

Science.gov (United States)

Shi, Xiaolan; Wang, Yuhang; Zhao, Kehan; Liu, Na; Sun, Gaofeng; Zhang, Liuwan

2015-11-01

The epitaxial 200-nm-thick FeV2O4(110) films on (110)-oriented SrTiO3, LaAlO3 and MgAl2O4 substrates were fabricated for the first time by pulsed laser deposition, and the structural, magnetic, and magnetoresistance anisotropy were investigated systematically. All the films are monoclinic, whereas its bulk is cubic. Compared to FeV2O4 single crystals, films on SrTiO3 and MgAl2O4 are strongly compressively strained in [001] direction, while slightly tensily strained along normal [110] and in-plane [ 1 1 ¯ 0 ] directions. In contrast, films on LaAlO3 are only slightly distorted from cubic. The magnetic hard axis is in direction, while the easier axis is along normal [110] direction for films on SrTiO3 and MgAl2O4, and in-plane [ 1 1 ¯ 0 ] direction for films on LaAlO3. Magnetoresistance anisotropy follows the magnetization. The magnetic anisotropy is dominated by the magnetocrystalline energy, and tuned by the magneto-elastic coupling.

Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO3/SrTiO3/SmTiO3 Quantum Well Structures.

Science.gov (United States)

Hardy, Will J; Isaac, Brandon; Marshall, Patrick; Mikheev, Evgeny; Zhou, Panpan; Stemmer, Susanne; Natelson, Douglas

2017-04-25

Heterointerfaces of SrTiO 3 with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO 3 /SrTiO 3 , support a high carrier density electron gas at the interface whose electronic properties are determined by a combination of lattice distortions, spin-orbit coupling, defects, and various regimes of magnetic and charge ordering. Here, we study electronic transport in mesoscale devices made with heterostructures of SrTiO 3 sandwiched between layers of SmTiO 3 , in which the transport properties can be tuned from a regime of Fermi-liquid like resistivity (ρ ∝ T 2 ) to a non-Fermi liquid (ρ ∝ T 5/3 ) by controlling the SrTiO 3 thickness. In mesoscale devices at low temperatures, we find unexpected voltage fluctuations that grow in magnitude as T is decreased below 20 K, are suppressed with increasing contact electrode size, and are independent of the drive current and contact spacing distance. Magnetoresistance fluctuations are also observed, which are reminiscent of universal conductance fluctuations but not entirely consistent with their conventional properties. Candidate explanations are considered, and a mechanism is suggested based on mesoscopic temporal fluctuations of the Seebeck coefficient. An improved understanding of charge transport in these model systems, especially their quantum coherent properties, may lead to insights into the nature of transport in strongly correlated materials that deviate from Fermi liquid theory.

Critical current density and microstructure of YBa2Cu3O7-x films as a function of film thickness

International Nuclear Information System (INIS)

Mogro-Campero, A.; Turner, L.G.; Hall, E.L.; Lewis, N.

1990-01-01

Thin films of nominal composition YBa 2 Cu 3 O 7-x (YBCO) were produced on (100) SrTiO 3 substrates by coevaporation and furnace annealing. Film thicknesses in the range of 0.2 to 2.4 μm were analyzed. Microstructural investigations by cross sectional transmission electron microscopy (TEM) reveal a continuous layer of about 0.4 μm thickness adjacent to the substrate with c-axis normal to the substrate plane. In thicker films the remaining top portion has the c-axis in the film plane. The critical current density (J c ) at 77 K decreases with increasing thickness in the thickness range exceeding 0.4 μm, qualitatively consistent with the microstructural observation, but quantitatively inconsistent with a simple model based on the microstructural data

Promoting Photocatalytic Overall Water Splitting by Controlled Magnesium Incorporation in SrTiO3 Photocatalysts.

Science.gov (United States)

Han, Kai; Lin, Yen-Chun; Yang, Chia-Min; Jong, Ronald; Mul, Guido; Mei, Bastian

2017-11-23

SrTiO 3 is a well-known photocatalyst inducing overall water splitting when exposed to UV irradiation of wavelengths water-splitting efficiency of the Mg:SrTiO x composites is up to 20 times higher compared to SrTiO 3 containing similar catalytic nanoparticles, and an apparent quantum yield (AQY) of 10 % can be obtained in the wavelength range of 300-400 nm. Detailed characterization of the Mg:SrTiO x composites revealed that Mg is likely substituting the tetravalent Ti ion, leading to a favorable surface-space-charge layer. This originates from tuning of the donor density in the cubic SrTiO 3 structure by Mg incorporation and enables high oxygen-evolution rates. Nevertheless, interfacing with an appropriate hydrogen evolution catalyst is mandatory and non-trivial to obtain high-performance in water splitting. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multilayer bioactive glass/zirconium titanate thin films in bone tissue engineering and regenerative dentistry

Directory of Open Access Journals (Sweden)

Mozafari M

2013-04-01

Full Text Available Masoud Mozafari,1,2 Erfan Salahinejad,1,3 Vahid Shabafrooz,1 Mostafa Yazdimamaghani,1 Daryoosh Vashaee,4 Lobat Tayebi1,5 1Helmerich Advanced Technology Research Center, School of Materials Science and Engineering, Oklahoma State University, Tulsa, OK, USA; 2Biomaterials Group, Faculty of Biomedical Engineering (Center of Excellence, Amirkabir University of Technology, Tehran, Iran; 3Department of Materials Science and Engineering, School of Engineering, Shiraz University, Shiraz, Iran; 4Helmerich Advanced Technology Research Center, School of Electrical and Computer Engineering, Oklahoma State University, Tulsa, OK, USA; 5School of Chemical Engineering, Oklahoma State University, Tulsa, OK, USA Abstract: Surface modification, particularly coatings deposition, is beneficial to tissue-engineering applications. In this work, bioactive glass/zirconium titanate composite thin films were prepared by a sol-gel spin-coating method. The surface features of the coatings were studied by scanning electron microscopy, atomic force microscopy, and spectroscopic reflection analyses. The results show that uniform and sound multilayer thin films were successfully prepared through the optimization of the process variables and the application of carboxymethyl cellulose as a dispersing agent. Also, it was found that the thickness and roughness of the multilayer coatings increase nonlinearly with increasing the number of the layers. This new class of nanocomposite coatings, comprising the bioactive and inert components, is expected not only to enhance bioactivity and biocompatibility, but also to protect the surface of metallic implants against wear and corrosion. Keywords: bioactive glass, zirconium titanate, spin-coating, microstructural properties, bone/dental applications, tissue engineering

Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO3-based thin films

Science.gov (United States)

Abazari, M.; Safari, A.; Bharadwaja, S. S. N.; Trolier-McKinstry, S.

2010-02-01

Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

Enhancement of critical current density of YBa2Cu3O7-δ thin films by nanoscale CeO2 pretreatment of substrate surfaces

International Nuclear Information System (INIS)

Cui, X.M.; Liu, G.Q.; Wang, J.; Huang, Z.C.; Zhao, Y.T.; Tao, B.W.; Li, Y.R.

2007-01-01

YBa 2 Cu 3 O 7-δ (YBCO) films were prepared on single-crystal SrTiO 3 substrates with metal-organic deposition using trifluoroacetates (TFA-MOD). Positive results have been acquired in controlled study to investigate the effects of substrate surface modification on the growth-induced flux-pinning nanostructures in YBCO films. Nanoscale CeO 2 particles were applied to single-crystal SrTiO 3 substrate surfaces using pulsed laser deposition before YBCO precursors coating. Superconducting properties of the YBCO films grown on the controlled CeO 2 -modified substrates have shown substantial improvement in the critical current densities (J c ) at 77 K over those grown on untreated substrates in almost all the field (78% increment at 1 T, 77 K). We think the reason is that the CeO 2 nanoparticles act as pinning centers

Controlling the conductivity of amorphous LaAlO3/SrTiO3 interfaces by in-situ application of an electric field during fabrication

DEFF Research Database (Denmark)

Trier, Felix; Amoruso, S.; Christensen, Dennis Valbjørn

2013-01-01

Amorphous-LaAlO3/SrTiO3 interfaces present metallic conductivity similar to those found in their all-crystalline counterparts. Here, the conductivity of amorphous-LaAlO3/SrTiO3 interfaces is modified by an external electric field applied in-situ with a biased truncated cone electrode (−10 V ≤ Vbias...

Crystalline and electronic structure of epitaxial γ-Al2O3 films

International Nuclear Information System (INIS)

Wu, Huiyan; Lu, Dawei; Zhu, Kerong; Xu, Guoyong; Wang, Hu

2013-01-01

Epitaxial γ-Al 2 O 3 films were fabricated on SrTiO 3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth γ-Al 2 O 3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial γ-Al 2 O 3 , we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial γ-Al 2 O 3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites

Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

International Nuclear Information System (INIS)

Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

2016-01-01

Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

Science.gov (United States)

Abazari, M.; Safari, A.

2010-12-01

Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

Science.gov (United States)

Klug, Jeffrey A.

The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

Solid phase epitaxial growth of high mobility La:BaSnO_3 thin films co-doped with interstitial hydrogen

International Nuclear Information System (INIS)

Niedermeier, Christian A.; Rhode, Sneha; Fearn, Sarah; Moram, Michelle A.; Ide, Keisuke; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

2016-01-01

This work presents the solid phase epitaxial growth of high mobility La:BaSnO_3 thin films on SrTiO_3 single crystal substrates by crystallization through thermal annealing of nanocrystalline thin films prepared by pulsed laser deposition at room temperature. The La:BaSnO_3 thin films show high epitaxial quality and Hall mobilities up to 26 ± 1 cm"2/Vs. Secondary ion mass spectroscopy is used to determine the La concentration profile in the La:BaSnO_3 thin films, and a 9%–16% La doping activation efficiency is obtained. An investigation of H doping to BaSnO_3 thin films is presented employing H plasma treatment at room temperature. Carrier concentrations in previously insulating BaSnO_3 thin films were increased to 3 × 10"1"9" cm"−"3 and in La:BaSnO_3 thin films from 6 × 10"1"9" cm"−"3 to 1.5 × 10"2"0" cm"−"3, supporting a theoretical prediction that interstitial H serves as an excellent n-type dopant. An analysis of the free electron absorption by infrared spectroscopy yields a small (H,La):BaSnO_3 electron effective mass of 0.27 ± 0.05 m_0 and an optical mobility of 26 ± 7 cm"2/Vs. As compared to La:BaSnO_3 single crystals, the smaller electron mobility in epitaxial thin films grown on SrTiO_3 substrates is ascribed to threading dislocations as observed in high resolution transmission electron micrographs.

Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

International Nuclear Information System (INIS)

Todd, N. K.; Mathur, N. D.; Blamire, M. G.

2001-01-01

The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

Orientation Control of Interfacial Magnetism at La0.67Sr0.33MnO3/SrTiO3 Interfaces.

Science.gov (United States)

Guo, Er-Jia; Charlton, Timothy; Ambaye, Haile; Desautels, Ryan D; Lee, Ho Nyung; Fitzsimmons, Michael R

2017-06-07

Understanding the magnetism at the interface between a ferromagnet and an insulator is essential because the commonly posited magnetic "dead" layer close to an interface can be problematic in magnetic tunnel junctions. Previously, degradation of the magnetic interface was attributed to charge discontinuity across the interface. Here, the interfacial magnetism was investigated using three identically prepared La 0.67 Sr 0.33 MnO 3 (LSMO) thin films grown on different oriented SrTiO 3 (STO) substrates by polarized neutron reflectometry. In all cases the magnetization at the LSMO/STO interface is larger than the film bulk. We show that the interfacial magnetization is largest across the LSMO/STO interfaces with (001) and (111) orientations, which have the largest net charge discontinuities across the interfaces. In contrast, the magnetization of LSMO/STO across the (110) interface, the orientation with no net charge discontinuity, is the smallest of the three orientations. We show that a magnetically degraded interface is not intrinsic to LSMO/STO heterostructures. The approach to use different crystallographic orientations provides a means to investigate the influence of charge discontinuity on the interfacial magnetization.

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

KAUST Repository

Sarath Kumar, S. R.; Barasheed, Abeer Z.; Alshareef, Husam N.

2013-01-01

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

KAUST Repository

Sarath Kumar, S. R.

2013-08-14

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

Characterization of irradiation damage distribution near TiO2/SrTiO3 interfaces using coherent acoustic phonon interferometry

International Nuclear Information System (INIS)

Yarotski, Dmitry; Yan Li; Jia Quanxi; Taylor, Antoinette J.; Fu Engang; Wang Yongqiang; Uberuaga, Blas P.

2012-01-01

We apply ultrafast coherent acoustic phonon interferometry to characterize the distribution of the radiation damage near the TiO 2 /SrTiO 3 interfaces. We show that the optical and mechanical properties of anatase TiO 2 remain unaffected by the radiation dosages in the 0.1÷5 dpa (displacements per atom) range, while the degraded optical response indicates a significant defect accumulation in the interfacial region of SrTiO 3 at 0.1 dpa and subsequent amorphization at 3 dpa. Comparison between the theoretical simulations and the experimental results reveals an almost threefold reduction of the sound velocity in the irradiated SrTiO 3 layer with peak damage levels of 3 and 5 dpa.

Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3

Science.gov (United States)

Trier, Felix; Reich, K. V.; Christensen, Dennis Valbjørn; Zhang, Yu; Tuller, Harry L.; Chen, Yunzhong; Shklovskii, B. I.; Pryds, Nini

2017-08-01

Metallic LaAlO3/SrTiO3 (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, ns, is poorly understood. Here, we derive a simple expression for the three-dimensional electron density near the interface, n3 D , as a function of ns and find that the mobility for LAO/STO-based interfaces depends on n3 D in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with N ≃5 ×1018 cm-3 background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons n3 DN , the mobility collapses because scattering happens on n3 D intentionally introduced donors. For LAO/STO, the polar catastrophe which provides electrons is not supposed to provide an equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO, the polar catastrophe model should be revisited.

Surface morphology analysis of nanostructured (Ba sub x , Sr sub 1 sub - sub x)TiO sub 3 thin films using fractal method

CERN Document Server

Hong, K J; Choi, W K; Cho, J C

2003-01-01

Based on the fractal theory, this paper uses scanning electron microscopy images to investigate the roughness characteristics of nanostructured (Ba Sr)TiO sub 3 thin films by sol-gel methods. The percentage grain area, surface fractal dimensions and 3D image are evaluated using image analysis methods. The thickness of the (Ba Sr)TiO sub 3 thin films was 260-280 nm. The surface fractal dimensions were increased with strontium doping, and grain area, were decreased with it. The fractal dimension and the grain areas of the (Ba sub 0 sub . sub 7 Sr sub 0 sub . sub 3)TiO sub 3 thin films were 1.81 and 81%. Based on the image analysis, the roughness height of 3D images as 256 levels was about 3 nm and its distribution was about 35-40% for the (Ba sub 0 sub . sub 8 Sr sub 0 sub . sub 2)TiO sub 3 and (Ba sub 0 sub . sub 7 Sr sub 0 sub . sub 3)TiO sub 3 thin films. The roughness height of the BST thin films was distributed from 35% to 40% ranging from 3 nm to 4 nm. By increasing the strontium doping, the roughness hei...

Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

Directory of Open Access Journals (Sweden)

S. Gariglio

2016-06-01

Full Text Available In this review, we focus on the celebrated interface between two band insulators, LaAlO3 and SrTiO3, that was found to be conducting, superconducting, and to display a strong spin-orbit coupling. We discuss the formation of the 2-dimensional electron liquid at this interface, the particular electronic structure linked to the carrier confinement, the transport properties, and the signatures of magnetism. We then highlight distinctive characteristics of the superconducting regime, such as the electric field effect control of the carrier density, the unique tunability observed in this system, and the role of the electronic subband structure. Finally we compare the behavior of Tc versus 2D doping with the dome-like behavior of the 3D bulk superconductivity observed in doped SrTiO3. This comparison reveals surprising differences when the Tc behavior is analyzed in terms of the 3D carrier density for the interface and the bulk.

Strain effect on the magnetic and transport properties of LaCoO3 thin films

Science.gov (United States)

Li, Y.; Peng, S. J.; Wang, D. J.; Wu, K. M.; Wang, S. H.

2018-05-01

LaCoO3 (LCO) has attracted much attention due to the unique magnetic transition and spin transition of Co3+ ions. Epitaxial LCO film exhibits an unexpected ferromagnetism, in contrast to the non-magnetism of bulk LCO. An in-depth study on the property of strained LCO film is of great importance. We have fabricated 30 nm LCO films on various substrates and studied the magnetic and transport properties of films in different strain states (compressed strain for LCO/LaAlO3, tensile strain for LCO/(LaAlO3)0.3(Sr2TaAlO6)0.35, SrTiO3). The in-plane tensiled LCO films exhibit ferromagnetic ground state at 5K and magnetic transition with TC around 85K, while compressed LCO/LaAlO3 film has a negligibly small moment signal. Our results reveal that in-plane tensile strain and tetragonal distortion are much more favorable for stabilizing the FM order in LCO films.

High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

KAUST Repository

Nazir, Safdar; Schwingenschlö gl, Udo

2011-01-01

The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions

Dielectric characterization of low-loss calcium strontium titanate fibers produced by laser floating zone technique for wireless communication

International Nuclear Information System (INIS)

Amaral, F.; Valente, M.A.; Costa, L.C.; Costa, F.M.

2014-01-01

Wireless communication technology assisted to a huge development during the last two decades, responding to the growing demand for small size and low weight devices such as cell phones and global positioning systems. The need for miniaturization and higher autonomy resulted in the development of new dielectric oxide ceramics with very specific properties, to be applied as dielectric resonators in filters, oscillators, and antennas. Some crucial properties as a high quality factor, high dielectric constant, and near zero temperature coefficient of resonant frequency must be considered during the selection of the appropriate materials. The present work deals with the preparation of calcium titanate (CaTiO 3 ), strontium titanate (SrTiO 3 ), and calcium strontium titanate (Ca x Sr 1-x TiO 3 ) fibers produced by laser floating zone (LFZ) technique. Our results show that fibers grown at lower pulling rates exhibit higher ε', for all the studied frequency range, including the microwave region. Moreover, the quality factor is always high envisaging the possibility to include these materials in future wireless device applications. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electrochemical characterization and redox behavior of Nb-doped SrTiO3

DEFF Research Database (Denmark)

Blennow Tullmar, Peter; Kammer Hansen, Kent; Wallenberg, L. Reine

2009-01-01

Sr-vacancy compensated Nb-doped SrTiO3 with the nominal composition Sr0.94Ti0.9Nb0.1O3 has been evaluated as a solid oxide fuel cell (SOFC) anode material in terms of redox stability and electrochemical properties. Sr0.94Ti0.9Nb0.1O3 has been synthesized with a recently developed modified glycine......-nitrate process. The phase purity and redox behavior have been analyzed with XRD and TGA. The electrochemical properties of Sr0.94Ti0.9Nb0.1O3 and a composite electrode of Sr0.94Ti0.9Nb0.1O3/YSZ have been investigated by electrochemical impedance spectroscopy (EIS) on cone shaped electrodes and on electrodes...... in a symmetrical cell configuration. The experiments indicated that the Nb-doped SrTiO3 electrodes were redox stable and showed a potential ability to be used as a part of a SOFC anode. The electrochemical activity appeared to be governed by the concentration of defect species (especially Ti3+ and V-0...

Adsorption of UO22+ in surfaces of SrTiO3

International Nuclear Information System (INIS)

Ortiz O, H.B.; Ordonez R, E.; Fernandez V, S.M.

2005-01-01

The internationally accepted solution in the administration of the high level radioactive residuals is the multi barrier deep geologic storage which should guarantee that do not exist flights neither transfer of residuals to the atmosphere in time periods of at least 10,000 years. In this confinement type exists the interest to study materials that can be used as engineering barriers as well as the diverse interaction phenomena between these and the radionuclides. In this work it is presented the physicochemical characterization and evaluation of the surface properties and of adsorption of U(VI) in form of UO 2 (NO 3 ) 2 on the SrTiO 3 like possible candidate for contention barrier in the deep geologic confinement. The made studies showed that the SrTiO 3 is stable to temperatures between 0 and 800 C. At the same time it could settle down that the maximum sorption percentages are reached to near pH to the isoelectric point, where chemical species prevail in solution of the type UO 2 (X) - . (Author)

Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

International Nuclear Information System (INIS)

Zhou, Y.M.; He, M.Z.; Xie, Z.

2014-01-01

Highlights: • Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum. • The Ti/TaN double layers improved the adhesion with Cu thin films and showed good diffusion barrier between Cu and SiO 2 /Si up to the annealing condition. • The failure mechanism of Ti/TaN bi-layer is similar with the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si. - Abstract: Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10 −3 Pa. Ti/TaN double layers were formed on SiO 2 /Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO 2 /Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO 2 /Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu–Si compounds like Cu 3 Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO 2 /Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si

Computer graphic investigation on the epitaxial growth of superconductor films

International Nuclear Information System (INIS)

Miyamoto, A.; Iwamoto, S.; Inui, T.; Agusa, K.

1989-01-01

A mechanism of the epitaxial growth the oxide superconductor films has been investigated by using the computer graphics for the combination of orthorhombic Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 MgO, and ZrO 2 . The (001) plane Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 , MgO, and ZrO 2 . The (001) plane of Ba 2 YCu 3 O 7-x has been shown to fit the (100) plane of SrTiO 3 , MgO, and ZrO 2 . A crystallographic fit has also been proved between the (110) plane of Ba 2 YCu 3 O 7-x and the (110) plane of SrTiO 3 . These results are consistent with the experimental data about the epitaxial growth of the Ba 2 YCu 3 O 7-x films. Furthermore, detailed investigation of atomic arrangements has indicated some differences in the ionic interaction at the superconductor-substrate interface among SrTiO 3 , MgO, and ZrO 2 substrates. As for ZrO 2 (100) plane, for examples, ionic arrangements at the oxide layer is favorable only for the interaction with Y 3+ layer of Ba 2 YCu 3 O 7-x , while the Zr-O layer of ZrO 2 can interact with both Ba-O layer and Cu-O layer of Ba 2 YCu 3 O 7-x

Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

NARCIS (Netherlands)

Farokhipoor, S.; Noheda, Beatriz

2012-01-01

BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71 degrees domain walls. A smaller amount of 109 degrees domain walls are also present at the boundaries between two adjacent

Recovery of oscillatory magneto-resistance in phase separated La0.3Pr0.4Ca0.3MnO3 epitaxial thin films

International Nuclear Information System (INIS)

Alagoz, H. S.; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H.; Jung, J.; Prasad, B.; Egilmez, M.

2013-01-01

In-plane angular dependent magneto-resistance has been studied in La 0.3 Pr 0.4 Ca 0.3 MnO 3 (LPCMO) manganite thin films deposited on the (100) oriented NdGaO 3 , and (001) oriented SrTiO 3 and LaAlO 3 substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ρ attains a large time dependent value. The ρ decreases sharply with an increasing angle θ between the magnetic field and the current, and does not display an expected oscillatory cos 2 θ/sin 2 θ dependence for all films. The regular oscillations are recovered during repetitive sweeping of θ between 0° and 180°. We discuss possible factors that could produce these unusual changes in the resistivity

Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

International Nuclear Information System (INIS)

Solanki, Anjana; Choudhary, Surbhi; Satsangi, Vibha R.; Shrivastav, Rohit; Dass, Sahab

2013-01-01

Highlights: ► Effect of 100 MeV Si 8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO 3 thin films was studied. ► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique. ► Optimal irradiation fluence for best PEC response was 5 × 10 11 ion cm −2 . ► Maximum photocurrent density was observed to be 0.7 mA cm −2 at 0.4 V/SCE. ► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity. -- Abstract: Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO 3 ) thin films were investigated by irradiating films with 100 MeV Si 8+ ions at different ion fluences in the range of 1 × 10 11 –2 × 10 13 ions cm −2 . BaTiO 3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm −2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO 3 film irradiated at 5 × 10 11 ions cm −2 , which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity

Experimental study of heterogeneous organic chemistry induced by far ultraviolet light: Implications for growth of organic aerosols by CH3 addition in the atmospheres of Titan and early Earth

Science.gov (United States)

Hong, Peng; Sekine, Yasuhito; Sasamori, Tsutoni; Sugita, Seiji

2018-06-01

Formation of organic aerosols driven by photochemical reactions has been observed and suggested in CH4-containing atmospheres, including Titan and early Earth. However, the detailed production and growth mechanisms of organic aerosols driven by solar far ultraviolet (FUV) light remain poorly constrained. We conducted laboratory experiments simulating photochemical reactions in a CH4sbnd CO2 atmosphere driven by the FUV radiations dominated by the Lyman-α line. In the experiments, we analyzed time variations in thickness and infrared spectra of solid organic film formed on an optical window in a reaction cell. Gas species formed by FUV irradiation were also analyzed and compared with photochemical model calculations. Our experimental results show that the growth rate of the organic film decreases as the CH4/CO2 ratio of reactant gas mixture decreases, and that the decrease becomes very steep for CH4/CO2 organic film but that the addition reaction of CH3 radicals onto the organic film with the reaction probability around 10-2 can explain the growth rate. At CH4/CO2 organic film. Our results suggest that organic aerosols would grow through CH3 addition onto the surface during the precipitation of aerosol particles in the middle atmosphere of Titan and early Earth. On Titan, effective CH3 addition would reduce C2H6 production in the atmosphere. On early Earth, growth of aerosol particles would be less efficient than those on Titan, possibly resulting in small-sized monomers and influencing UV shielding.

Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

International Nuclear Information System (INIS)

Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

1990-01-01

In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

Ferroelectric and Piezoelectric properties of (111) oriented lanthanum modified lead zirconate titanate film

International Nuclear Information System (INIS)

Dutta, Soma; Antony Jeyaseelan, A.; Sruthi, S.

2014-01-01

Lanthanum modified lead zirconate titanate (PLZT) thick film with molecular formula of Pb 0.92 La 0.08 (Zr 0.52 Ti 0.48 ) 0.98 O 3 was grown preferentially along (111) direction on Pt/SiO 2 /Si (platinum/silicon oxide/silicon) substrate by spin coating of chemical solution. The directional growth of the film was facilitated by platinum (Pt) (111) template and rapid thermal annealing. X-ray diffraction pattern and atomic force microscopy revealed the preferential growth of the PLZT film. The film was characterized for ferroelectric and detailed piezoelectric properties in a parallel plate capacitor (metal–PLZT–metal) configuration. Ferroelectric characterization of the film showed saturated hysteresis loop with remanent polarization and coercive electric field values of 10.14 μC/cm 2 and 42 kV/cm, respectively, at an applied field of 300 kV/cm. Longitudinal piezoelectric coefficient (d 33,f ) was measured by employing converse piezoelectric effect where electrical charge response and displacement were measured with electrical voltage excitation on the sample electrodes. The effective transverse piezoelectric coefficient (e 31,f ) was derived from charge measurement with an applied mechanical excitation strain by using the four point bending method. d 33,f and e 31,f coefficients of PLZT films were found to be 380 pm/V and − 0.831 C/m 2 respectively. - Highlights: • PLZT (111) film is prepared by spin coating of chemical sol on Pt (111) template. • Piezoelectric d 33 value (380 pm/V) of PLZT film is found 20% higher than PZT. • Transverse piezocoefficient e 31,f of PLZT film is reported for the first time

Chemical solution deposition of LaMnO3-based films for coated conductors

International Nuclear Information System (INIS)

Shi, D Q; Zhu, X B; Kim, J H; Wang, L; Zeng, R; Dou, S X; Lei, H C; Sun, Y P

2008-01-01

LaMnO 3 -based films were prepared using the chemical solution deposition method. It was found that the films on perovskite oxide single crystal substrates are highly (h00)-oriented when the annealing atmosphere is oxygen or air; however, when the substrate is yttrium-stabilized ZrO 2 , only the La 1-x Na x MnO 3 films are highly (h00)-oriented, and other LaMnO 3 -based films are (110)-oriented. Under a reducing annealing atmosphere, the atmosphere must be wet in order to create a suitable oxygen partial pressure to crystallize the LaMnO 3 -based films. After annealing under a wet reducing atmosphere the LaMnO 3 -based films are (110)-oriented when the films are directly deposited on Ni tapes; however, when SrTiO 3 -buffered Ni tapes are used, the LaMnO 3 films are (h00)-oriented, which is suitable for subsequent growth of YBCO. The results suggest that it is possible to tune the orientation of buffer layers using suitable templates, which can widen the selection of buffer layers for coated conductors in the all metallorganic deposition approach

Strontium titanate thin film deposition - structural and electronical characterization

Energy Technology Data Exchange (ETDEWEB)

Hanzig, Florian; Hanzig, Juliane; Stoecker, Hartmut; Mehner, Erik; Abendroth, Barbara; Meyer, Dirk C. [TU Bergakademie Freiberg, Institut fuer Experimentelle Physik (Germany); Franke, Michael [TU Bergakademie Freiberg, Institut fuer Elektronik- und Sensormaterialien (Germany)

2012-07-01

Strontium titanate is on the one hand a widely-used model oxide for solids which crystallize in perovskite type of structure. On the other hand, with its large band-gap energy and its mixed ionic and electronic conductivity, SrTiO{sub 3} is a promising isolating material in metal-insulator-metal (MIM) structures for resistive switching memory cells. Here, we used physical vapour deposition methods (e. g. electron-beam and sputtering) to produce strontium titanate layers. Sample thicknesses were probed with X-ray reflectometry (XRR) and spectroscopic ellipsometry (SE). Additionally, layer densities and dielectric functions were quantified with XRR and SE, respectively. Using infrared spectroscopy free electron concentrations were obtained. Phase and element composition analysis was carried out with grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy. Subsequent temperature treatment of samples lead to crystallization of the initially amorphous strontium titanate.

Photolithographically patterened thin-film multilayer devices of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kingston, J.J.; Wellstood, F.C.; Quan, D.; Clarke, J.

1990-09-01

We have fabricated thin-film YBa 2 Cu 3 O 7-x -SrTiO 3 -YBa 2 Cu 3 O 7-x multilayer interconnect structures in which each in situ laser-deposited film is independently patterned by photolithography. In particular, we have constructed the two key components necessary for a superconducting multilayer interconnect technology, crossovers and window contacts. As a further demonstration of the technology, we have fabricated a thin-film flux transformer, suitable for use with a Superconducting QUantum Interference Device (SQUID), that includes a ten-turn input coil with 6μm linewidth. Transport measurements showed that the critical temperature was 87K and the critical current was 135 μA at 82K. 7 refs., 6 figs

Atomic layer epitaxy of Ruddlesden-Popper SrO(SrTiO3)n films by means of metalorganic aerosol deposition

International Nuclear Information System (INIS)

Jungbauer, M.; Hühn, S.; Moshnyaga, V.; Egoavil, R.; Tan, H.; Verbeeck, J.; Van Tendeloo, G.

2014-01-01

We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO 3 ) n (n = ∞, 2, 3, 4) by means of metalorganic aerosol deposition (MAD). The films are grown on SrTiO 3 (001) substrates by means of a sequential deposition of Sr-O/Ti-O 2 atomic monolayers, monitored in-situ by optical ellipsometry. X-ray diffraction and transmission electron microscopy (TEM) reveal the RP structure with n = 2–4 in accordance with the growth recipe. RP defects, observed by TEM in a good correlation with the in-situ ellipsometry, mainly result from the excess of SrO. Being maximal at the film/substrate interface, the SrO excess rapidly decreases and saturates after 5–6 repetitions of the SrO(SrTiO 3 ) 4 block at the level of 2.4%. This identifies the SrTiO 3 substrate surface as a source of RP defects under oxidizing conditions within MAD. Advantages and limitations of MAD as a solution-based and vacuum-free chemical deposition route were discussed in comparison with molecular beam epitaxy

Electrical transport across nanometric SrTiO3 and BaTiO3 barriers in conducting/insulator/conducting junctions

Science.gov (United States)

Navarro, H.; Sirena, M.; González Sutter, J.; Troiani, H. E.; del Corro, P. G.; Granell, P.; Golmar, F.; Haberkorn, N.

2018-01-01

We report the electrical transport properties of conducting/insulator/conducting heterostructures by studying current-voltage IV curves at room temperature. The measurements were obtained on tunnel junctions with different areas (900, 400 and 100 μm2) using a conducting atomic force microscope. Trilayers with GdBa2Cu3O7 (GBCO) as the bottom electrode, SrTiO3 or BaTiO3 (thicknesses between 1.6 and 4 nm) as the insulator barrier, and GBCO or Nb as the top electrode were grown by DC sputtering on (100) SrTiO3 substrates For SrTiO3 and BaTiO3 barriers, asymmetric IV curves at positive and negative polarization can be obtained using electrodes with different work function. In addition, hysteretic IV curves are obtained for BaTiO3 barriers, which can be ascribed to a combined effect of the FE reversal switching polarization and an oxygen vacancy migration. For GBCO/BaTiO3/GBCO heterostructures, the IV curves correspond to that expected for asymmetric interfaces, which indicates that the disorder affects differently the properties at the bottom and top interfaces. Our results show the role of the interface disorder on the electrical transport of conducting/insulator/conduction heterostructures, which is relevant for different applications, going from resistive switching memories (at room temperature) to Josephson junctions (at low temperatures).

Transverse piezoelectric coefficient measurement of flexible lead zirconate titanate thin films

Energy Technology Data Exchange (ETDEWEB)

Dufay, T.; Guiffard, B.; Seveno, R. [LUNAM Université, Université de Nantes, IETR (Institut d' Électronique et de Télécommunications de Rennes), UMR CNRS 6164, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3 (France); Thomas, J.-C. [LUNAM Université, Université de Nantes-École Centrale Nantes, GeM (Institut de Recherche en Génie Civil et Ingénierie Mécanique), UMR CNRS 6183, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3 (France)

2015-05-28

Highly flexible lead zirconate titanate, Pb(Zr,Ti)O{sub 3} (PZT), thin films have been realized by modified sol-gel process. The transverse piezoelectric coefficient d{sub 31} was determined from the tip displacement of bending-mode actuators made of PZT cantilever deposited onto bare or RuO{sub 2} coated aluminium substrate (16 μm thick). The influence of the thickness of ruthenium dioxide RuO{sub 2} and PZT layers was investigated for Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3}. The modification of Zr/Ti ratio from 40/60 to 60/40 was done for 3 μm thick PZT thin films onto aluminium (Al) and Al/RuO{sub 2} substrates. A laser vibrometer was used to measure the beam displacement under controlled electric field. The experimental results were fitted in order to find the piezoelectric coefficient. Very large tip deflections of about 1 mm under low voltage (∼8 V) were measured for every cantilevers at the resonance frequency (∼180 Hz). For a given Zr/Ti ratio of 58/42, it was found that the addition of a 40 nm thick RuO{sub 2} interfacial layer between the aluminium substrate and the PZT layer induces a remarkable increase of the d{sub 31} coefficient by a factor of 2.7, thus corresponding to a maximal d{sub 31} value of 33 pC/N. These results make the recently developed PZT/Al thin films very attractive for both low frequency bending mode actuating applications and vibrating energy harvesting.

Thickness and angular dependent magnetic anisotropy of La0.67Sr0.33MnO3 thin films by Vectorial Magneto Optical Kerr Magnetometry

Science.gov (United States)

Chaluvadi, S. K.; Perna, P.; Ajejas, F.; Camarero, J.; Pautrat, A.; Flament, S.; Méchin, L.

2017-10-01

We investigate the in-plane magnetic anisotropy in La0.67Sr0.33MnO3 thin films grown on SrTiO3 (001) substrate using angular dependent room temperature Vectorial Magneto-Optical Kerr Magnetometry. The experimental data reveals that the magnetic anisotropy symmetry landscape significantly changes depending upon the strain and thickness. At low film thickness (12 and 25 nm) the dominant uniaxial anisotropy is due to interface effects, step edges due to mis-cut angle of SrTiO3 substrate. At intermediate thickness, the magnetic anisotropy presents a competition between magnetocrystalline (biaxial) and substrate step induced (uniaxial) anisotropy. Depending upon their relative strengths, a profound biaxial or uniaxial or mixed anisotropy is favoured. Above the critical thickness, magnetocrystalline anisotropy dominates all other effects and shows a biaxial anisotropy.

Photoelectrochemical Properties of FeO Supported on TiO2-Based Thin Films Converted from Self-Assembled Hydrogen Titanate Nanotube Powders

Directory of Open Access Journals (Sweden)

Kyung-Jong Noh

2012-01-01

Full Text Available A photoanode was fabricated using hematite (α-Fe2O3 nanoparticles which had been held in a thin film of hydrogen titanate nanotubes (H-TiNT, synthesized by repetitive self-assembling method on FTO (fluorine-doped tin oxide glass, which were incorporated via dipping process in aqueous Fe(NO33 solution. Current voltage (I-V electrochemical properties of the photoanode heat-treated at 500°C for 10 min in air were evaluated under ultraviolet-visible light irradiation. Microstructure and crystallinity changes were also investigated. The prepared Fe2O3/H-TiNT/FTO composite thin film exhibited about threefold as much photocurrent as the Fe2O3/FTO film. The improvement in photocurrent was considered to be caused by reduced recombination of electrons and holes, with an appropriate amount of Fe2O3 spherical nanoparticles supported on the H-TiNT/FTO film. Nanosized spherical Fe2O3 particles with about 65 wt% on the H-TiNT/FTO film showed best performance in our study.

Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films

International Nuclear Information System (INIS)

Simoes, A.Z.; Riccardi, C.S.; Cavalcante, L.S.; Gonzalez, A.H.M.; Longo, E.; Varela, J.A.

2008-01-01

The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi 3.25 La 0.75 Ti 3 O 12 was investigated. Films with thicknesses ranging from 230 to 404 nm were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness

Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

Science.gov (United States)

Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

2018-05-01

Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

Large anisotropy in colossal magnetoresistance of charge orbital ordered epitaxial Sm0.5Ca0.5MnO3 films

DEFF Research Database (Denmark)

Chen, Yunzhong; Sun, J.R.; Zhao, J.L.

2009-01-01

We investigated the structure and magnetotransport properties of Sm0.5Ca0.5MnO3 (SCMO) films epitaxially grown on (011)-oriented SrTiO3 substrates, which exhibited clear charge/orbital ordering transition. A significant anisotropy of ~1000 in the colossal magnetoresistance (CMR) effect was observ...

How Correlated is the FeSe /SrTiO3 System?

Science.gov (United States)

Mandal, Subhasish; Zhang, Peng; Ismail-Beigi, Sohrab; Haule, K.

2017-08-01

Recent observation of ˜10 times higher critical temperature in a FeSe monolayer compared with its bulk phase has drawn a great deal of attention because the electronic structure in the monolayer phase appears to be different than bulk FeSe. Using a combination of density functional theory and dynamical mean field theory, we find electronic correlations have important effects on the predicted atomic-scale geometry and the electronic structure of the monolayer FeSe on SrTiO3 . The electronic correlations are dominantly controlled by the Se-Fe-Se angle either in the bulk phase or the monolayer phase. But the angle sensitivity increases and the orbital differentiation decreases in the monolayer phase compared to the bulk phase. The correlations are more dependent on Hund's J than Hubbard U . The observed orbital selective incoherence to coherence crossover with temperature confirms the Hund's metallic nature of the monolayer FeSe. We also find electron doping by oxygen vacancies in SrTiO3 increases the correlation strength, especially in the dx y orbital by reducing the Se-Fe-Se angle.

Printed Barium Strontium Titanate capacitors on silicon

Energy Technology Data Exchange (ETDEWEB)

Sette, Daniele [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg); Kovacova, Veronika [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Defay, Emmanuel, E-mail: emmanuel.defay@list.lu [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg)

2015-08-31

In this paper, we show that Barium Strontium Titanate (BST) films can be prepared by inkjet printing of sol–gel precursors on platinized silicon substrate. Moreover, a functional variable capacitor working in the GHz range has been made without any lithography or etching steps. Finally, this technology requires 40 times less precursors than the standard sol–gel spin-coating technique. - Highlights: • Inkjet printing of Barium Strontium Titanate films • Deposition on silicon substrate • Inkjet printed silver top electrode • First ever BST films thinner than 1 μm RF functional variable capacitor that has required no lithography.

Physical and chemical properties of YBa2Cu3O7 thin films

International Nuclear Information System (INIS)

El-Samahi, M.I.

1991-12-01

Investigations were carried out to determine the influence of different annealing processes on the superconducting properties of the YBa 2 Cu 3 O 7 thin films. The samples were produced by means of coevaporation of Cu, Y and Ba on polycrystalline yttria stabilized (YSZ) ZrO 2 and single crystal SrTiO 3 (001) substrates. Subsequently, the as-deposited films were subjected to two different annealing methods to crystallize the superconducting phase YBa 2 Cu 3 O 7 : (i) heating up, annealing and cooling in an oxygen atmosphere and (ii) heating up in an innert gas atmosphere up to the maximum annealing temperature (T max ) and then annealing and cooling under oxygen. (orig.)

Strain-induced properties of epitaxial VOx thin films

NARCIS (Netherlands)

Rata, AD; Hibma, T

We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

Enhanced thermoelectric figure-of-merit in thermally robust, nanostructured superlattices based on SrTiO3

KAUST Repository

Abutaha, Anas I.

2015-03-24

Thermoelectric (TE) metal oxides overcome crucial disadvantages of traditional heavy-metal-alloy-based TE materials, such as toxicity, scarcity, and instability at high temperatures. Here, we report the TE properties of metal oxide superlattices, composed from alternating layers of 5% Pr3+-doped SrTiO3-δ (SPTO) and 20% Nb5+-doped SrTiO3-δ (STNO) fabricated using pulsed laser deposition (PLD). Excellent stability is established for these superlattices by maintaining the crystal structure and reproducing the TE properties after long-time (20 h) annealing at high temperature (∼1000 K). The introduction of oxygen vacancies as well as extrinsic dopants (Pr3+ and Nb5+), with different masses and ionic radii, at different lattice sites in SPTO and STNO layers, respectively, results in a substantial reduction of thermal conductivity via scattering a wider range of phonon spectrum without limiting the electrical transport and thermopower, leading to an enhancement in the figure-of-merit (ZT). The superlattice composed of 20 SPTO/STNO pairs, 8 unit cells of each layer, exhibits a ZT value of 0.46 at 1000 K, which is the highest among SrTiO3-based thermoelectrics. © 2015 American Chemical Society.

Enhanced thermoelectric figure-of-merit in thermally robust, nanostructured superlattices based on SrTiO3

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Li, Kun; Dehkordi, Arash Mehdizadeh; Tritt, Terry M.; Alshareef, Husam N.

2015-01-01

Thermoelectric (TE) metal oxides overcome crucial disadvantages of traditional heavy-metal-alloy-based TE materials, such as toxicity, scarcity, and instability at high temperatures. Here, we report the TE properties of metal oxide superlattices, composed from alternating layers of 5% Pr3+-doped SrTiO3-δ (SPTO) and 20% Nb5+-doped SrTiO3-δ (STNO) fabricated using pulsed laser deposition (PLD). Excellent stability is established for these superlattices by maintaining the crystal structure and reproducing the TE properties after long-time (20 h) annealing at high temperature (∼1000 K). The introduction of oxygen vacancies as well as extrinsic dopants (Pr3+ and Nb5+), with different masses and ionic radii, at different lattice sites in SPTO and STNO layers, respectively, results in a substantial reduction of thermal conductivity via scattering a wider range of phonon spectrum without limiting the electrical transport and thermopower, leading to an enhancement in the figure-of-merit (ZT). The superlattice composed of 20 SPTO/STNO pairs, 8 unit cells of each layer, exhibits a ZT value of 0.46 at 1000 K, which is the highest among SrTiO3-based thermoelectrics. © 2015 American Chemical Society.

Oxygen incorporation effects in annealed epitaxial La(1-x)SrxMnO3 thin films

International Nuclear Information System (INIS)

Petrisor, T.; Gabor, M. S.; Tiusan, C.; Boulle, A.; Bellouard, C.; Pana, O.; Petrisor, T.

2011-01-01

This paper presents our results regarding oxygen incorporation effects in epitaxial La (1-x) Sr x MnO 3 thin films, deposited on SrTiO 3 (001) single crystal substrates, by annealing in different gas mixtures of argon and oxygen. A particular emphasis is placed on the correlation of structural properties with the magnetic properties of the films, Curie temperature, and coercive field. In this sense, we demonstrate that the evolution of the diffuse part of the ω-scans performed on the films are due to oxygen excess in the film lattice, which creates cationic vacancies within the films. Also, we show that two regimes of oxygen incorporation in the films exist, one in which the films evolve toward a single phase and oxygen stoichiometry is recovered, and a second one dominated by oxygen over-doping effects. In order to support our study, XPS measurements were performed, from which we have evaluated the Mn 3+ /Mn 4+ ionic ratio.

Ferroelectric and Piezoelectric properties of (111) oriented lanthanum modified lead zirconate titanate film

Energy Technology Data Exchange (ETDEWEB)

Dutta, Soma, E-mail: som@nal.res.in; Antony Jeyaseelan, A.; Sruthi, S.

2014-07-01

Lanthanum modified lead zirconate titanate (PLZT) thick film with molecular formula of Pb{sub 0.92}La{sub 0.08}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.98}O{sub 3} was grown preferentially along (111) direction on Pt/SiO{sub 2}/Si (platinum/silicon oxide/silicon) substrate by spin coating of chemical solution. The directional growth of the film was facilitated by platinum (Pt) (111) template and rapid thermal annealing. X-ray diffraction pattern and atomic force microscopy revealed the preferential growth of the PLZT film. The film was characterized for ferroelectric and detailed piezoelectric properties in a parallel plate capacitor (metal–PLZT–metal) configuration. Ferroelectric characterization of the film showed saturated hysteresis loop with remanent polarization and coercive electric field values of 10.14 μC/cm{sup 2} and 42 kV/cm, respectively, at an applied field of 300 kV/cm. Longitudinal piezoelectric coefficient (d{sub 33,f}) was measured by employing converse piezoelectric effect where electrical charge response and displacement were measured with electrical voltage excitation on the sample electrodes. The effective transverse piezoelectric coefficient (e{sub 31,f}) was derived from charge measurement with an applied mechanical excitation strain by using the four point bending method. d{sub 33,f} and e{sub 31,f} coefficients of PLZT films were found to be 380 pm/V and − 0.831 C/m{sup 2} respectively. - Highlights: • PLZT (111) film is prepared by spin coating of chemical sol on Pt (111) template. • Piezoelectric d{sub 33} value (380 pm/V) of PLZT film is found 20% higher than PZT. • Transverse piezocoefficient e{sub 31,f} of PLZT film is reported for the first time.

Non-aqueous electrochemical deposition of lead zirconate titanate films for flexible sensor applications

Science.gov (United States)

Joseph, Sherin; Kumar, A. V. Ramesh; John, Reji

2017-11-01

Lead zirconate titanate (PZT) is one of the most important piezoelectric materials widely used for underwater sensors. However, PZTs are hard and non-compliant and hence there is an overwhelming attention devoted toward making it flexible by preparing films on flexible substrates by different routes. In this work, the electrochemical deposition of composition controlled PZT films over flexible stainless steel (SS) foil substrates using non-aqueous electrolyte dimethyl sulphoxide (DMSO) was carried out. Effects of various key parameters involved in electrochemical deposition process such as current density and time of deposition were studied. It was found that a current density of 25 mA/cm2 for 5 min gave a good film. The morphology and topography evaluation of the films was carried out by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively, which showed a uniform morphology with a surface roughness of 2 nm. The PZT phase formation was studied using X-ray diffraction (XRD) and corroborated with Raman spectroscopic studies. The dielectric constant, dielectric loss, hysteresis and I-V characteristics of the film was evaluated.

Low temperature fabrication of barium titanate hybrid films and their dielectric properties

International Nuclear Information System (INIS)

Kobayashi, Yoshio; Saito, Hirobumi; Kinoshita, Takafumi; Nagao, Daisuke; Konno, Mikio

2011-01-01

A method for incorporating BT nano-crystalline into barium titanate (BT) films is proposed for a low temperature fabrication of high dielectric constant films. BT nanoparticles were synthesized by hydrolysis of a BT complex alkoxide in 2-methoxyethanol (ME)/ethanol cosolvent. As the ME volume fraction in the cosolvent (ME fraction) increased from 0 to 100%, the particle and crystal sizes tended to increase from 13.4 to 30.2 nm and from 15.8 to 31.4 nm, respectively, and the particle dispersion in the solution became more improved. The BT particles were mixed with BT complex alkoxide dissolved in an ME/ethanol cosolvent for preparing a precursor solution that was then spin-coated on a Pt substrate and dried at 150 o C. The dielectric constant of the spin-coated BT hybrid film increased with an increase in the volume fraction of the BT particles in the film. The dissipation factor of the hybrid film tended to decrease with an increase in the ME fraction in the precursor solution. The hybrid film fabricated at a BT fraction of 30% and an ME fraction of 25% attained a dielectric constant as high as 94.5 with a surface roughness of 14.0 nm and a dissipation factor of 0.11.

Development and construction of a novel MOCVD facility for the growth of ferroelectric thin layers

International Nuclear Information System (INIS)

Schaefer, P.R.

2002-02-01

This thesis deals with the production of ferroelectric thin films using the MOCVD technology. The main focus is put on the design and construction of a complete MOCVD research system that is equipped with a novel non-contact vaporizer system. The precursors are nebulized in an ultrasonic atomizer and injected into a hot gas stream, so they can vaporize without getting into contact with a hot surface. Hence, one of the biggest disadvantages of conventional vaporizer concepts, the contamination of the vaporizing element with decomposing chemicals, could be avoided completely, resulting in a nearly maintenance-free system. In a direct comparison with the well-established Direct Liquid Injection Subsystem DLI-25C from MKS Instruments, the advantages of non-contact evaporation were clearly demonstrated. Additionally, the scope of this work included the development of standard deposition processes for the ternary oxides SrTiO 3 , BaTiO 3 und PbTiO 3 and growth studies were performed. Electrical measurements performed on MIM structures with Pt electrodes and SrTiO 3 as dielectric indicate a high film quality comparable with results presented in the literature. Furthermore, for the first time the solid solution (Pb x Ba 1-x )TiO 3 has been deposited by MOCVD. This material system is widely unknown in thin film form and it is well suited as a model system to investigate the influence of mechanical stresses on the film properties, because it represents a transition between the (as a thin film) superparaelectric barium titanate and the ferroelectric lead titanate. Through variation of the lead/barium ratio the tetragonal distortion of the lattice cell could be adjusted in a wide range. (orig.)

Dielectric relaxation in epitaxial films of paraelectric-magnetic SrTiO.sub.3./sub.-SrMnO.sub.3./sub. solid solution

Czech Academy of Sciences Publication Activity Database

Savinov, Maxim; Bovtun, Viktor; Tereshina-Chitrova, Evgenia; Stupakov, Alexandr; Dejneka, Alexandr; Tyunina, Marina

2018-01-01

Roč. 112, č. 5 (2018), s. 1-4, č. článku 052901. ISSN 0003-6951 R&D Projects: GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : dielectric relaxation * epitaxial films * paraelectric-magnetic * SrTiO 3 -SrMnO 3 solid solution Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics , supercond.) Impact factor: 3.411, year: 2016

Electronic structure and visible light photocatalysis water splitting property of chromium-doped SrTiO3

International Nuclear Information System (INIS)

Liu, J.W.; Chen, G.; Li, Z.H.; Zhang, Z.G.

2006-01-01

Cr-doped SrTi 1- x Cr x O 3 (x=0.00, 0.02, 0.05, 0.10) powders, prepared by solvothermal method, were further characterized by ultraviolet-visible (UV-vis) absorption spectroscopy. The UV-vis spectra indicate that the SrTi 1- x Cr x O 3 powders can absorb not only UV light like pure SrTiO 3 powder but also the visible-light spectrum (λ>420 nm). The results of density functional theory (DFT) calculation illuminate that the visible-light absorption bands in the SrTi 1- x Cr x O 3 catalyst are attributed to the band transition from the Cr 3d to the Cr 3d+Ti 3d hybrid orbital. The photocatalytic activities of chromium-doped SrTiO 3 both under UV and visible light are increased with the increase in the amounts of chromium. -- Graphical abstract: SrTi 1- x Cr x O 3 powders, prepared by solvothermal method, can absorb not only UV light like pure SrTiO 3 powder but also the visible-light spectrum (λ>420 nm). The results of DFT calculation illuminate that the visible-light absorption bands in the SrTi 1- x Cr x O 3 catalyst are attributed to the band transition from the Cr 3d to the Cr 3d+Ti 3d hybrid orbital

Bismuth Titanate Fabricated by Spray-on Deposition and Microwave Sintering For High-Temperature Ultrasonic Transducers.

Science.gov (United States)

Searfass, Clifford T; Pheil, C; Sinding, K; Tittmann, B R; Baba, A; Agrawal, D K

2016-01-01

Thick films of ferroelectric bismuth titanate (Bi4Ti3O12) have been fabricated by spray-on deposition in conjunction with microwave sintering for use as high-temperature ultrasonic transducers. The elastic modulus, density, permittivity, and conductivity of the films were characterized. Electro-mechanical properties of the films were estimated with a commercial d33 meter which gave 16 pC/N. This value is higher than typically reported for bulk bismuth titanate; however, these films withstand higher field strengths during poling which is correlated with higher d33 values. Films were capable of operating at 650 °C for roughly 5 min before depoling and can operate at 600 °C for at least 7 days.

Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

Energy Technology Data Exchange (ETDEWEB)

Chen Wenbin, E-mail: cwb0201@163.com [Electromechanical Engineering College, Guilin University of Electronic Technology (China); McCarthy, Kevin G. [Department of Electrical and Electronic Engineering, University College Cork (Ireland); Copuroglu, Mehmet; O' Brien, Shane; Winfield, Richard; Mathewson, Alan [Tyndall National Institute, University College Cork (Ireland)

2012-05-01

This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 Degree-Sign C and 750 Degree-Sign C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

Science.gov (United States)

Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

1998-03-01

We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

Thermal Transport and Phonon Hydrodynamics in Strontium Titanate

Science.gov (United States)

Martelli, Valentina; Jiménez, Julio Larrea; Continentino, Mucio; Baggio-Saitovitch, Elisa; Behnia, Kamran

2018-03-01

We present a study of thermal conductivity, κ , in undoped and doped strontium titanate in a wide temperature range (2-400 K) and detecting different regimes of heat flow. In undoped SrTiO3 , κ evolves faster than cubic with temperature below its peak and in a narrow temperature window. Such behavior, previously observed in a handful of solids, has been attributed to a Poiseuille flow of phonons, expected to arise when momentum-conserving scattering events outweigh momentum-degrading ones. The effect disappears in the presence of dopants. In SrTi1 -xNbx O3 , a significant reduction in lattice thermal conductivity starts below the temperature at which the average inter-dopant distance and the thermal wavelength of acoustic phonons become comparable. In the high-temperature regime, thermal diffusivity becomes proportional to the inverse of temperature, with a prefactor set by sound velocity and Planckian time (τp=(ℏ/kBT ) ).

Substrate clamping effects on irreversible domain wall dynamics in lead zirconate titanate thin films.

Science.gov (United States)

Griggio, F; Jesse, S; Kumar, A; Ovchinnikov, O; Kim, H; Jackson, T N; Damjanovic, D; Kalinin, S V; Trolier-McKinstry, S

2012-04-13

The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a dramatic change in the global dielectric nonlinearity and its frequency dependence as a function of mechanical clamping. Furthermore, we observe a transition from strong clustering of the nonlinear response for the clamped case to almost uniform nonlinearity for the released film. This behavior is ascribed to increased mobility of domain walls. These results suggest the dominant role of collective strain interactions mediated by the local and global mechanical boundary conditions on the domain wall dynamics. The work presented in this Letter demonstrates that measurements on clamped films may considerably underestimate the piezoelectric coefficients and coupling constants of released structures used in microelectromechanical systems, energy harvesting systems, and microrobots.

Growth and magnetic properties of multiferroic LaxBi1-xMnO3 thin films

Science.gov (United States)

Gajek, M.; Bibes, M.; Wyczisk, F.; Varela, M.; Fontcuberta, J.; Barthélémy, A.

2007-05-01

A comparative study of LaxBi1-xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1-xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions.

Gate-tunable polarized phase of two-dimensional electrons at the LaAlO3/SrTiO3 interface.

Science.gov (United States)

Joshua, Arjun; Ruhman, Jonathan; Pecker, Sharon; Altman, Ehud; Ilani, Shahal

2013-06-11

Controlling the coupling between localized spins and itinerant electrons can lead to exotic magnetic states. A novel system featuring local magnetic moments and extended 2D electrons is the interface between LaAlO3 and SrTiO3. The magnetism of the interface, however, was observed to be insensitive to the presence of these electrons and is believed to arise solely from extrinsic sources like oxygen vacancies and strain. Here we show the existence of unconventional electronic phases in the LaAlO3/SrTiO3 system pointing to an underlying tunable coupling between itinerant electrons and localized moments. Using anisotropic magnetoresistance and anomalous Hall effect measurements in a unique in-plane configuration, we identify two distinct phases in the space of carrier density and magnetic field. At high densities and fields, the electronic system is strongly polarized and shows a response, which is highly anisotropic along the crystalline directions. Surprisingly, below a density-dependent critical field, the polarization and anisotropy vanish whereas the resistivity sharply rises. The unprecedented vanishing of the easy axes below a critical field is in sharp contrast with other coupled magnetic systems and indicates strong coupling with the moments that depends on the symmetry of the itinerant electrons. The observed interplay between the two phases indicates the nature of magnetism at the LaAlO3/SrTiO3 interface as both having an intrinsic origin and being tunable.

Processing of La/sub 1.8/Sr/sub 0.2/CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

International Nuclear Information System (INIS)

Madakson, P.; Cuomo, J.J.; Yee, D.S.; Roy, R.A.; Scilla, G.

1988-01-01

High quality La/sub 1.8/Sr/sub 0.2/CuO 4 and YBa 2 Cu 3 O 7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 μm thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF 2 , Si, CaF 2 , ZrO 2 -9% Y 2 O 3 , BaF 2 , Al 2 O 3 , and SrTiO 3 . Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa 2 Cu 2 O 7 structure, in the case of SrTiO 3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film. In general, the superconducting transition temperature is found to depend on substrate temperature and ion beam energy, film composition, annealing conditions, and the nature and the magnitude of the substrate/film interaction

Preparation of titanium oxide and metal titanates as powders, thin films, and microspheres by complex sol-gel process

International Nuclear Information System (INIS)

Deptula, A.; Olczak, T.; Lada, W.; Chmielewski, A.G.; Jakubaszek, U.; Sartowska, B.; Goretta, K.C.; Alvani, C.; Casadio, S.; Contini, V.

2006-01-01

Titanium oxide, for many years an important pigment, has recently been applied widely as a photocatalyst or as supports for metallic catalysts, gas sensors, photovoltaic solar cells, and water and air purification devices. Titanium oxide (TiO 2 ) and titanates based on Ba, Sr and Ca were prepared from commercial solutions of TiCl 4 and HNO 3 . The main preparation steps for the sols consisted of elimination of Cl - by distillation with HNO 3 and addition of metal hydroxides for the titanates. Resulting sols were gelled and used to: (a) prepare irregularly shaped powders by evaporation; (b) produce by a dipping technique thin films on glass, Ag or Ti supports; (c) produce spherical powders (diameters <100 μm) by solvent extraction. Results of thermal and X-ray-diffraction analyses indicated that the temperatures required to form the various compounds were lower than those necessary to form the compounds by conventional solid-state reactions and comparable to those required with use of organometallic based sol-gel methods. Temperatures of formation could be further reduced by addition of ascorbic acid (ASC) to the sols

Charge transfer mechanism for the formation of metallic states at the KTaO3/SrTiO3 interface

KAUST Repository

Nazir, Safdar; Schwingenschlö gl, Udo; Singh, Nirpendra

2011-01-01

The electronic and optical properties of the KTaO3/SrTiO3 heterointerface are analyzed by the full-potential linearized augmented plane-wave approach of density functional theory. Optimization of the atomic positions points at subordinate changes

Controlling the Carrier Density of SrTiO3-Based Heterostructures with Annealing

DEFF Research Database (Denmark)

Christensen, Dennis Valbjørn; von Soosten, Merlin; Trier, Felix

2017-01-01

The conducting interface between the insulating oxides LaAlO3 (LAO) and SrTiO3 (STO) displays numerous physical phenomena that can be tuned by varying the carrier density, which is generally achieved by electrostatic gating or adjustment of growth parameters. Here, it is reported how annealing...... in oxygen at low temperatures (T

Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

Science.gov (United States)

Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

1993-07-01

Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

Spin-on Bi4Sr3Ca3Cu4O16μ/sub x/ superconducting thin films from citrate precursors

International Nuclear Information System (INIS)

Furcone, S.L.; Chiang, Y.

1988-01-01

Thin films in the Bi-Sr-Ca-Cu-O system have been synthesized from homogeneous liquid citrate precursors by a spin-coating and pyrolysis method. Films prepared on SrTiO 3 substrates of [100] orientation show strongly textured orientations with the c axis of the predominant Bi 4 Sr 3 Ca 3 Cu 4 O 16 μ/sub x/ phase normal to the film plane. In a single coating and firing, crack-free films of 0.2--0.5 μm thickness are obtained. For films fired to peak temperatures of 850--875 0 C, linearly decreasing resistance with temperature is observed, with rho (300 K)∼460 μΩ cm and rho (300 K)rho (100 K)∼2.4. Clear onsets of superconductivity are observed at 90--100 K, with occasional films showing smaller resistant drops at 110--120 K. For all films, T/sub c/ (R = 0) occurs in the range 70--75 K. High critical current densities at 4.2 K of 5--8 x 10 5 Acm 2 are measured by direct transport

Epitaxial growth and properties of YBaCuO thin films

International Nuclear Information System (INIS)

Geerk, J.; Linker, G.; Meyer, O.

1989-08-01

The growth quality of YBaCuO thin films deposited by sputtering on different substrates (Al 2 O 3 , MgO, SrTiO 3 , Zr(Y)O 2 ) has been studied by X-ray diffraction and channeling experiments as a function of the deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films of up to 5.5x10 6 A/cm 2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing three-dimensional superconducting behaviour. Films on (100) SrTiO 3 of 9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Ba 2 Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16 mV and ±30 mV. (orig.) [de

Magnetoresistance at artificial interfaces in epitaxial ferromagnetic thin films

International Nuclear Information System (INIS)

Fontcuberta, J.; Bibes, M.; Martinez, B.; Trtik, V.; Ferrater, C.; Sanchez, F.; Varela, M.

2000-01-01

Epitaxial La 2/3 Sr 1/3 MnO 3 and SrRuO 3 thin films have been grown by laser ablation on single-crystalline SrTiO 3 substrates. Prior to manganite or ruthenate deposition tracks have been patterned on the SrTiO 3 substrate by using an appropriately focused laser beam. In the experiments here reported linear tracks have been formed. The magnetotransport properties of the films, particularly the magnetoresistance, along paths parallel and perpendicular to the track have been extensively investigated and compared to similar data recorded on films grown on bicrystalline STO substrates. Whereas in LSMO a significant low-field tunnel magnetoresistance develops across the artificial interface, in SRO this tunnel contribution is absent. However, a significant high-field magnetoresistance is observed for both metallic and ferromagnetic systems. The results are analysed and discussed within the framework of the current understanding of double exchange and itinerant ferromagnets. Magnetoresistance data for various configurations of the track array are presented

Pulsed laser deposition of piezoelectric lead zirconate titanate thin films maintaining a post-CMOS compatible thermal budget

Science.gov (United States)

Schatz, A.; Pantel, D.; Hanemann, T.

2017-09-01

Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.

Anion and cation diffusion in barium titanate and strontium titanate; Anionen- und Kationendiffusion in Barium- und Strontiumtitanat

Energy Technology Data Exchange (ETDEWEB)

Kessel, Markus Franz

2012-12-19

pressure and temperature. The data suggests that oxygen vacancies and electron holes play the key role in the formation of the equilibrium surface space-charge layers. The oxygen vacancy diffusivities and the oxygen vacancy migration enthalpy are compared to other experimentally and theoretically derived data for barium titanate and a global expression for the temperature dependence of the oxygen vacancy diffusivity is determined. The latter was used for a comparison of the oxygen vacancy diffusivity and the oxygen vacancy migration enthalpy for BaTiO{sub 3} to other perovskite oxides. Furthermore, this work shows results from cation interdiffusion experiments between BaZrO{sub 3} and SrTiO{sub 3}. Thin films of barium zirconate were deposited on strontium titanate single crystals and the cation interdiffusion investigated as a function of temperature. All four cations show a main diffusion profile and an additional fast diffusion profile. Each main diffusion profile can be described independently by the thick-film solution of the diffusion equation suggesting the diffusion coefficients to be concentration independent. The fast diffusion profiles are attributed to fast diffusion of Ba and Zr along dislocations of the SrTiO{sub 3} single crystals and fast diffusion of Sr and Ti along the grain boundaries of the polycrystalline thin-film BaZrO{sub 3}. The migration enthalpies of the bulk profiles for all four cations are very similar. The results suggest a complex diffusion mechanism with coupled diffusion of the cation vacancies on the A and B sites of the perovskite lattice.

Influence of ion beam mixing on the growth of high temperature oxide superconducting thin film

International Nuclear Information System (INIS)

Bordes, N.; Rollett, A.D.; Cohen, M.R.; Nastasi, M.

1989-01-01

The superconducting properties of high temperature superconductor thin films are dependent on the quality of the substrate used to grow these films. In order to maximize the lattice matching between the superconducting film and the substrate, we have used a YBa 2 Cu 3 O 7 thin film deposited on left-angle 100 right-angle SrTiO 3 as a template. The first film was prepared by coevaporation of Y, BaF 2 and Cu on left-angle 100 right-angle SrTiO 3 , followed by an anneal in ''wet'' oxygen at 850 degree C. This film showed a sharp transition at about 90 K. A thicker layer of about 5000 A was then deposited on top of this first 2000 angstrom film, using the same procedure. After the post anneal at 850 degree C, the transition took place at 80 K and no epitaxy of the second film was observed. Ion beam mixing at 400 degree C, using 400 keV O ions was done at the interface of the two films (the second one being not annealed). After the post anneal, the film displayed an improved Tc at 90K. Moreover, epitaxy was shown to take place from the interface SrTiO 3 -123 film towards the surface and was dependent of the dose. These results will be discussed from the data obtained from Rutherford backscattering spectroscopy (RBS) combined with channeling experiments, x-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. 8 refs., 2 figs., 2 tabs

Effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate thin films: Experimental evidence and implications

Science.gov (United States)

Lou, X. J.; Zhang, H. J.; Luo, Z. D.; Zhang, F. P.; Liu, Y.; Liu, Q. D.; Fang, A. P.; Dkhil, B.; Zhang, M.; Ren, X. B.; He, H. L.

2014-09-01

The effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate (PZT) thin film was systematically investigated. It was found that electrical fatigue strongly affects the Rayleigh behaviour of the PZT film. Both the reversible and irreversible Rayleigh coefficients decrease with increasing the number of switching cycles. This phenomenon is attributed to the growth of an interfacial degraded layer between the electrode and the film during electrical cycling. The methodology used in this work could serve as an alternative way for evaluating the fatigue endurance and degradation in dielectric properties of ferroelectric thin-film devices during applications.

Laser writing of superconducting patterns on YBa2Cu3Ox films

International Nuclear Information System (INIS)

Dye, R.C.; Muenchausen, R.E.; Nogar, N.S.; Mukherjee, A.; Brueck, S.R.J.

1990-01-01

A novel process for the direct laser writing of thin-film high T c patterns is demonstrated. The process consists of deposition of a high quality film (308 nm laser ablation from a YBa 2 Cu 3 O x target with a 750 degree C substrate temperature and a 150 mTorr O 2 ambient), annealing in an inert atmosphere (Ar at 400 degree C for 5--20 min) to reduce the oxygen content and depress or eliminate the superconducting transition temperature, and direct-write laser heating (1.06 μm at ∼0.5 kW/cm 2 for ∼5 min) in an oxygen atmosphere at ∼590 Torr to selectively regenerate the high T c material. rf eddy current and four-point resistivity probe results confirm this process for both SrTiO 3 and LaAlO 3 substrates. Scanning electron micrographs indicate that this is a very mild processing sequence with no observable changes in film morphology

Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

KAUST Repository

Cossu, Fabrizio; Eyert, V.; Schwingenschlö gl, Udo

2013-01-01

We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid

Large piezoelectricity in electric-field modified single crystals of SrTiO3

Science.gov (United States)

Khanbabaee, B.; Mehner, E.; Richter, C.; Hanzig, J.; Zschornak, M.; Pietsch, U.; Stöcker, H.; Leisegang, T.; Meyer, D. C.; Gorfman, S.

2016-11-01

Defect engineering is an effective and powerful tool to control the existing material properties and produce completely new ones, which are symmetry-forbidden in a defect-free crystal. For example, the application of a static electric field to a single crystal of SrTiO3 forms a strained near-surface layer through the migration of oxygen vacancies out of the area beneath the positively charged electrode. While it was previously shown that this near-surface phase holds pyroelectric properties, which are symmetry-forbidden in centrosymmetric bulk SrTiO3, this paper reports that the same phase is strongly piezoelectric. We demonstrate the piezoelectricity of this phase through stroboscopic time-resolved X-ray diffraction under alternating electric field and show that the effective piezoelectric coefficient d33 ranges between 60 and 100 pC/N. The possible atomistic origins of the piezoelectric activity are discussed as a coupling between the electrostrictive effect and spontaneous polarization of this near-surface phase.

Simulating the 3-D Structure of Titan's Upper Atmosphere

Science.gov (United States)

Bell, J. M.; Waite, H.; Westlake, J.; Magee, B.

2009-05-01

We present results from the 3-D Titan Global Ionosphere-Thermosphere Model (Bell et al [2009], PSS, in review). We show comparisons between simulated N2, CH4, and H2 density fields and the in-situ data from the Cassini Ion Neutral Mass Spectrometer (INMS). We describe the temperature and wind fields consistent with these density calculations. Variations with local time, longitude, and latitude will be addressed. Potential plasma heating sources can be estimated using the 1-D model of De La Haye et al [2007, 2008] and the impacts on the thermosphere of Titan can be assessed in a global sense in Titan-GITM. Lastly, we will place these findings within the context of recent work in modeling the 2-D structure of Titan's upper atmosphere (Mueller-Wodarg et al [2008]).

Performance-Microstructure Relations in Ni/CGO Infiltrated Nb-doped SrTiO3 SOFC Anodes

DEFF Research Database (Denmark)

Ramos, Tania; Bernuy-Lopez, Carlos; Reddy Sudireddy, Bhaskar

2012-01-01

Nb-doped SrTiO3 solid oxide fuel cell (SOFC) anodes, infiltrated with CGO/Ni, were investigated by electrochemical impedance spectroscopy (EIS) and high resolution microscopy techniques, upon varying production and testing parameters. The electrochemical analysis involved a combination of distrib......Nb-doped SrTiO3 solid oxide fuel cell (SOFC) anodes, infiltrated with CGO/Ni, were investigated by electrochemical impedance spectroscopy (EIS) and high resolution microscopy techniques, upon varying production and testing parameters. The electrochemical analysis involved a combination...... of distribution of relaxation times (DRT) and complex non-linear least squares (CNLS) fitting routine. These electrodes were studied as singlephase or as composites with 8YSZ. Sr0.94Ti0.9Nb0.1O3-δ/ 10 vol.% 8YSZ composite infiltrated electrodes were the best overall performers, with enhanced performance stability...

Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3

Science.gov (United States)

Wen, Fangdi; Cao, Yanwei; Liu, Xiaoran; Pal, B.; Middey, S.; Kareev, M.; Chakhalian, J.

2018-03-01

Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at complex oxide interfaces present an experimental challenge. For example, despite almost a decade long research effort, the microscopic origin of ferromagnetism in LaAlO3/SrTiO3 heterojunctions is still an open question. Here, by using a prototypical two-dimensional electron gas (2DEG) which emerges at the interface between band insulator SrTiO3 and antiferromagnetic Mott insulator LaTiO3, the experiment reveals the evidence for magnetic phase separation in a hole-doped Ti d1 t2g system, resulting in spin-polarized 2DEG. The details of electronic and magnetic properties of the 2DEG were investigated by temperature-dependent d.c. transport, angle-dependent X-ray photoemission spectroscopy, and temperature-dependent magnetoresistance. The observation of clear hysteresis in magnetotransport at low magnetic fields implies spin-polarization from magnetic islands in the hole rich LaTiO3 near the interface. These findings emphasize the role of magnetic instabilities in doped Mott insulators, thus providing another path for designing all-oxide structures relevant to spintronic applications.

Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films

Science.gov (United States)

Zednik, Ricardo J.; McIntyre, Paul C.; Baniecki, John D.; Ishii, Masatoshi; Shioga, Takeshi; Kurihara, Kazuaki

2007-03-01

We present the results of a systematic dielectric study for sputter deposited barium strontium titanate thin film planar capacitors measured over a wide temperature range of 20-575K for frequencies between 1kHz and 1MHz. Our observations of dielectric loss peaks in the temperature and frequency domains cannot be understood in the typical framework of intrinsic phonon losses. We find that the accepted phenomenological Curie-von Schweidler dielectric behavior (universal relaxation law) in our barium strontium titanate films is only applicable over a narrow temperature range. An excellent fit to the Vogel-Fulcher expression suggests relaxorlike behavior in these films. The activation energy of the observed phenomenon suggests that oxygen ion motion play a role in the apparent relaxor behavior, although further experimental work is required to test this hypothesis.

Orientación de láminas delgadas de (Pb, CaTiO3

Directory of Open Access Journals (Sweden)

Mendiola, J.

1999-06-01

Full Text Available Calcium modified PbTiO3 thin films have been prepared on platinized Si, MgO and SrTiO3 substrates. The films were deposited from a sol-gel solution with a concentration of 0.3 M and with a 10% excess of PbO. Two deposits of this solution on the substrates were made by spin-coating, crystallizing each of them by a Rapid Thermal Processing. The resulting films present a single (Pb,CaTiO3 perovskite phase. All the films are textured, but the films deposited on MgO and SrTiO3 show a preferred orientation in the polar direction of the perovskite. As a result of this orientation, pyroelectric coefficients were measured, without any poling, for the films on MgO and SrTiO3. Pyroelectric measurements indicate the application of these films in infrarred sensors.Se han preparado láminas delgadas de PbTiO3 modificado con calcio sobre substratos de Si, MgO y SrTiO3 electrodados con Pt. Las películas se depositaron a partir de una solución sintetizada por sol-gel, con concentración 0.3 M y con un 10 % en exceso de PbO. En cada lámina se hicieron dos depósitos de la solución sobre el substrato mediante la técnica de “spin-coating”, cristalizando cada uno de ellos con un tratamiento térmico rápido. Todas las láminas resultantes presentaban como única fase cristalina la perovskita de (Pb,CaTiO3. Las láminas presentaron una cierta textura, observándose una orientación preferente en la dirección polar en el caso de las películas depositas sobre MgO y SrTiO3. Como resultado de esta orientación, se midieron coeficientes piroeléctricos, sin polarización previa, en las láminas sobre MgO y SrTiO3. Las medidas piroeléctricas de estos materiales evidencian su utilidad en dispositivos para sensores de infrarrojo.

Formation of defect-fluorite structured NdNiOxHy epitaxial thin films via a soft chemical route from NdNiO3 precursors.

Science.gov (United States)

Onozuka, T; Chikamatsu, A; Katayama, T; Fukumura, T; Hasegawa, T

2016-07-26

A new phase of oxyhydride NdNiOxHy with a defect-fluorite structure was obtained by a soft chemical reaction of NdNiO3 epitaxial thin films on a substrate of SrTiO3 (100) with CaH2. The epitaxial relationship of this phase relative to SrTiO3 could be controlled by changing the reaction temperature. At 240 °C, NdNiOxHy grew with a [001] orientation, forming a thin layer of infinite-layer NdNiO2 at the interface between the NdNiOxHy and the substrate. Meanwhile, a high-temperature reaction at 400 °C formed [110]-oriented NdNiOxHy without NdNiO2.

Three-dimensional self-branching anatase TiO_2 nanorods with the improved carrier collection for SrTiO_3-based perovskite solar cells

International Nuclear Information System (INIS)

Hu, Yajing; Wang, Chen; Tang, Ying; Huang, Lu; Fu, Jianxun; Shi, Weimin; Wang, Linjun; Yang, Weiguang

2016-01-01

The organic–inorganic perovskite solar cells based on ternary oxide SrTiO_3 shows a higher Voc, attributed to its slightly higher conduction band edge and better morphology of absorber material. However, its less efficient carrier collection and limited overall interfacial areas between the absorber material and the electron-transport layer (ETL), dramatically reducing the Jsc. Here, By adjusting the concentrations of the Ti(OBu)_4, we successfully prepared the three-dimensional (3D) self-branching anatase TiO_2 nanorod/SrTiO_3 nanocomposites, and slightly tuned the particle size of SrTiO_3. With the incorporation of the three-dimensional (3D) self-branching anatase TiO_2 nanorod, the Jsc of the device based on SrTiO_3 was highly boosted. The best performing solar cell we obtained exhibited a PCE of 9.99% with a Jsc of 19.48 mA/cm"2. The excellent performance could be ascribed to the improvement of charge carrier collection of SrTiO_3, better surface coverage and crystallinity of CH_3NH_3PbI_3, and enhanced light scattering ability caused by 3D self-branching anatase TiO_2 nanorods. - Highlights: • The three-dimensional (3D) self-branching anatase TiO_2 nanorod/SrTiO_3 nanocomposites were prepared. • The particle sizes of SrTiO_3 can be slightly tuned. • The best performing solar cell we obtained exhibited a PCE of 9.99% with the Jsc of 19.48 mA/cm"2.

Large anisotropy in colossal magnetoresistance of charge orbital ordered epitaxial Sm(0.5)Ca(0.5)MnO(3) films.

Science.gov (United States)

Chen, Y Z; Sun, J R; Zhao, J L; Wang, J; Shen, B G; Pryds, N

2009-11-04

We investigated the structure and magnetotransport properties of Sm(0.5)Ca(0.5)MnO(3) (SCMO) films epitaxially grown on (011)-oriented SrTiO(3) substrates, which exhibited clear charge/orbital ordering transition. A significant anisotropy of ∼1000 in the colossal magnetoresistance (CMR) effect was observed in the films with a thickness between 50 and 80 nm, which was distinctly different from the basically isotropic CMR effect in bulk SCMO. The large anisotropy in the CMR can be ascribed to the intrinsic asymmetric strain in the film, which plays an important role in tuning the spin-orbit coupling in manganite films. The origin of the peculiar CMR effect is discussed.

EXAFS Study of Disorder in SrTiO3 Perovskite

International Nuclear Information System (INIS)

Kodre, Alojz; Arcon, Iztok; Gomilsek, Jana Padeznik; Zalar, Bostjan

2007-01-01

Ti K-edge EXAFS spectra of SrTiO3 at room temperature and at N2 boiling point are measured to detect the Ti ion displacement above and below the antiferrodistortive phase transition occurring at Tc = 105 K. The data yield a definite value of the displacement, only slightly dependent on the temperature. The sensitive dependence of the amplitude of Ti-O-Ti focusing paths on the scattering angle is used to infer the correlation of Ti displacements. A preference to alternating displacements is indicated

AFM study of growth of Bi2Sr2-xLaxCuO6 thin films

International Nuclear Information System (INIS)

Haitao Yang; Hongjie Tao; Yingzi Zhang; Duogui Yang; Lin Li; Zhongxian Zhao

1997-01-01

c-axis-oriented Bi 2 Sr 1.6 La 0.4 CuO 6 thin films deposited on flat planes of (100)SrTiO 3 , (100)LaAlO 3 and (100)MgO substrates and vicinal planes (off-angle ∼ 6 deg.) of SrTiO 3 substrates by RF magnetron sputtering were studied by atomic force microscopy (AFM). T c of these films reached 29 K. Film thickness ranged from 15 nm to 600 nm. Two typical growth modes have been observed. AFM images of thin films on flat planes of substrates showed a terraced-island growth mode. By contrast, Bi-2201 thin films on vicinal planes of substrates showed a step-flow growth mode. The growth unit is a half-unit-cell in the c-axis for both growth modes. No example of spiral growth, which was thought to be the typical structure of YBCO thin films, was found in either of these kinds of thin films. (author)

Anomalous Transport in Sketched Nanostructures at the LaAlO_{3}/SrTiO_{3} Interface

Directory of Open Access Journals (Sweden)

Guanglei Cheng

2013-03-01

Full Text Available The oxide heterostructure LaAlO_{3}/SrTiO_{3} supports a two-dimensional electron liquid with a variety of competing phases, including magnetism, superconductivity, and weak antilocalization because of Rashba spin-orbit coupling. Further confinement of this two-dimensional electron liquid to the quasi-one-dimensional regime can provide insight into the underlying physics of this system and reveal new behavior. Here, we describe magnetotransport experiments on narrow LaAlO_{3}/SrTiO_{3} structures created by a conductive atomic force microscope lithography technique. Four-terminal local-transport measurements on Hall bar structures about 10 nm wide yield longitudinal resistances that are comparable to the resistance quantum h/e^{2} and independent of the channel length. Large nonlocal resistances (as large as 10^{4}  Ω are observed in some but not all structures with separations between current and voltage that are large compared to the two-dimensional mean-free path. The nonlocal transport is strongly suppressed by the onset of superconductivity below about 200 mK. The origin of these anomalous transport signatures is not understood, but may arise from coherent transport defined by strong spin-orbit coupling and/or magnetic interactions.

Suppression of the two-dimensional electron gas in LaGaO3/SrTiO3 by cation intermixing

KAUST Repository

Nazir, S.; Amin, B.; Schwingenschlö gl, Udo

2013-01-01

Cation intermixing at the n-type polar LaGaO 3 /SrTiO 3 (001) interface is investigated by first principles calculations. Ti"Ga, Sr"La, and SrTi"LaGa intermixing are studied in comparison to each other, with a focus on the interface stability. We

Evolution of subband structure with gate-tuning at LaAlO3/SrTiO3 interfaces

Science.gov (United States)

Tang, Lucas; Smink, Sander; van Heeringen, Linde; Geessinck, Jaap; Rana, Abimanuya; Rastogi, Ankur; Maan, Jan Kees; Brinkman, Alexander; Zeitler, Uli; Hilgenkamp, Hans; McCollam, Alix

The outstanding characteristic of LaAlO3/SrTiO3 heterostructures is the formation of a high mobility 2D electron gas (2DEG) at the interface. The additional presence of superconductivity, magnetism and large spin-orbit coupling in these systems suggests that strong correlations play an important role in the electronic properties, in contrast to conventional semiconductor-based 2DEGs. Knowledge of the electronic bandstructure, and the interdependence of conduction electron density and properties is therefore essential for our understanding of these materials. We present new results of low temperature transport measurements in a high mobility LaAlO3/SrTiO3-based heterostructure, in magnetic fields up to 33 T. Shubnikov de-Haas oscillations are observed, revealing several subbands with different carrier densities. By application of an electric field in the back gate geometry, the Fermi level is tuned and thus we are able to map the smooth evolution of the subbands and their properties with carrier density. These results are in good agreement with recent theoretical work, such that we can disentangle the complex band structure, and quantify aspects such as Rashba spin-splitting and the mixing of orbital character.

Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers

KAUST Repository

Fuentes-Fernandez, E. M A; Baldenegro-Pé rez, Leonardo Aurelio; Quevedo-Ló pez, Manuel Angel Quevedo; Gnade, Bruce E.; Hande, Abhiman; Shah, Pradeep; Alshareef, Husam N.

2011-01-01

Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer

Growth and magnetic structure of La0.67Sr0.33MnO3 films