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Sample records for tin film deposition

  1. Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

    2009-01-01

    The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

  2. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  3. Crystal Orientation and Electrical Properties of Tin Oxide Transparent Conducting Films Deposited on Rutile Surface

    Science.gov (United States)

    Sawada, Y.; Hashimoto, Y.; Hoshi, Y.; Uchida, T.; Kobayashi, S.; Sun, L.; Yue, B.

    2017-10-01

    Thin films of tin oxide (SnO2) without doping are attractive transparent conducting film since environmentally unfavorable elements of antimony or fluorine are eliminated. Tin oxide films without doping were fabricated very cheaply on (001) and (100) planes of single crystal of rutile (TiO2) by spray chemical vapor deposition (mist CVD). The film deposited on rutile (001) surface was poorly epitaxial (double domain) but with higher mobility (24 cm2 V-1 s-1) and lower resistivity (1.6×10-3 Ω cm) than that deposited on glass substrate (16 cm2 V-1 s-1 and 2.4×10-3 Ω cm) for reference. Deposition on rutile (100) surface resulted in better epitaxial growth (single domain). The mobility (39 cm2 V-1 s-1) and the carrier electron density (2.7×1020 cm-3) were much higher. The resistivity (6.2×10-4 Ω cm) was compatible with those doped with antimony or fluorine and will be the lowest among tin oxide films without doping.

  4. Growth and Characterisation of Pulsed-Laser Deposited Tin Thin Films on Cube-Textured Copper at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Szwachta G.

    2016-06-01

    Full Text Available High-quality titanium nitride thin films have been grown on a cube-textured copper surface via pulsed laser deposition. The growth of TiN thin films has been very sensitive to pre-treatment procedure and substrate temperature. It is difficult to grow heteroexpitaxial TiN films directly on copper tape due to large differences in lattice constants, thermal expansion coefficients of the two materials as well as polycrystalline structure of substrate. The X-Ray diffraction measurement revealed presence of high peaks belonged to TiN(200 and TiN(111 thin films, depending on used etcher of copper surface. The electron diffraction patterns of TiN(200/Cu films confirmed the single-crystal nature of the films with cube-on-cube epitaxy. The high-resolution microscopy on our films revealed sharp interfaces between copper and titanium nitride with no presence of interfacial reaction.

  5. Effects of Deposition Parameters and Oxygen Addition on Properties of Sputtered Indium Tin Oxide Films

    Directory of Open Access Journals (Sweden)

    Badrul Munir

    2013-04-01

    Full Text Available Indium tin oxide (ITO films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222  to (400 and (440, as well as higher  surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity. The lowest resistivity of 5.36 x 10-4 Ω•cm was obtained at 750 nm film thickness. The films’ resistivity was increased by addition of oxygen up to 2% in the argon sputtering gas. All films showed over 85% transmittance in the visible wavelength range, possible for applications in photovoltaic and display devices. 

  6. Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Mohammad Afzaal

    2016-10-01

    Full Text Available In this work, the impact of translation rates in fluorine doped tin oxide (FTO thin films using atmospheric pressure chemical vapour deposition (APCVD were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200 plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200 preferred orientation. For low dopant concentration levels, atomic force microscope (AFM studies showed a reduction in roughness (and lower optical haze with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

  7. Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Byung Kook [Thin Film Materials Research Team, Korea Research Institute of Chemical Technology, Yuseong, P. O. Box 107, Daejeon 305-600 (Korea, Republic of); Department of Material Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of); Jung, Eunae; Kim, Seok Hwan; Moon, Dae Chul; Lee, Sun Sook; Park, Bo Keun [Thin Film Materials Research Team, Korea Research Institute of Chemical Technology, Yuseong, P. O. Box 107, Daejeon 305-600 (Korea, Republic of); Hwang, Jin Ha [Department of Material Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of); Chung, Taek-Mo; Kim, Chang Gyoun [Thin Film Materials Research Team, Korea Research Institute of Chemical Technology, Yuseong, P. O. Box 107, Daejeon 305-600 (Korea, Republic of); An, Ki-Seok, E-mail: ksan@krict.re.kr [Thin Film Materials Research Team, Korea Research Institute of Chemical Technology, Yuseong, P. O. Box 107, Daejeon 305-600 (Korea, Republic of)

    2012-10-15

    Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO{sub 2}. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10{sup 6} while the device mobility values were increased from 2.31 cm{sup 2}/V s to 6.24 cm{sup 2}/V s upon increasing the deposition temperature of the tin oxide films.

  8. Atomic-layer chemical-vapor-deposition of TiN thin films on Si(100) and Si(111)

    CERN Document Server

    Kim, Y S; Kim, Y D; Kim, W M

    2000-01-01

    An atomic-layer chemical vapor deposition (AL-CVD) system was used to deposit TiN thin films on Si(100) and Si(111) substrates by cyclic exposures of TiCl sub 4 and NH sub 3. The growth rate was measured by using the number of deposition cycles, and the physical properties were compared with those of TiN films grown by using conventional deposition methods. To investigate the growth mechanism, we suggest a growth model for TiN n order to calculate the growth rate per cycle with a Cerius program. The results of the calculation with the model were compared with the experimental values for the TiN film deposited using the AL-CVD method. The stoichiometry of the TiN film was examined by using Auger electron spectroscopy, and the chlorine and the oxygen impurities were examined. The x-ray diffraction and the transmission electron microscopy results for the TiN film exhibited a strong (200) peak and a randomly oriented columnar microstructure. The electrical resistivity was found to decrease with increasing deposit...

  9. Indium tin oxide films deposited on polyethylene naphthalate substrates by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G. [Centro de Investigacion y Estudios Avanzados del IPN-Unidad Queretaro, Apdo. postal 1-798, Queretaro, Qro., 76001 (Mexico); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN-Unidad Queretaro, Apdo. postal 1-798, Queretaro, Qro., 76001 (Mexico)], E-mail: rrbon@qro.cinvestav.mx

    2009-02-27

    Indium tin oxide (ITO) thin films were deposited on unheated polyethylene naphthalate substrates by radio-frequency (rf) magnetron sputtering from an In{sub 2}O{sub 3} (90 wt.%) containing SnO{sub 2} (10 wt.%) target. We report the structural, electrical and optical properties of the ITO films as a function of rf power and deposition time. Low rf power values, in the range of 100-130 W, were employed in the deposition process to avoid damage to the plastic substrates by heating caused by the plasma. The films were analyzed by X-ray diffraction and optical transmission measurements. A Hall measurement system was used to measure the carrier concentration and electrical resistivity of the films by the Van der Pauw method. The X-ray diffraction measurements analysis showed that the ITO films are polycrystalline with the bixbite cubic crystalline phase. It is observed a change in the preferential crystalline orientation of the films from the (222) to the (400) crystalline orientation with increasing rf power or deposition time in the sputtering process. The optical transmission of the films was around 80% with electrical resistivity and sheet resistance down to 4.9 x 10{sup -4} {omega}cm and 14 {omega}/sq, respectively.

  10. Cathodic cage plasma deposition of TiN and TiO{sub 2} thin films on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sousa, Romulo R. M. de [Department of Mechanics, Federal Institute of Education, Science, and Technology of Piaui, Praça da Liberdade, 1597, CEP 64000-040 Teresina, Piaui, Brazil and Department of Mechanical Engineering, Federal University of Piaui, Campus Min. Petronio Portela, Ininga, CEP 64049-550 Teresina, Piaui (Brazil); Sato, Patricia S.; Nascente, Pedro A. P., E-mail: nascente@ufscar.br [Department of Materials Engineering, Federal University of Sao Carlos, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, Sao Paulo (Brazil); Viana, Bartolomeu C. [Department of Physics, Federal University of Piaui, Campus Min. Petronio Portela, Ininga, CEP 64049-550 Teresina, Piaui (Brazil); Alves, Clodomiro [Department of Exact and Natural Sciences, Federal Rural University of Semi Arido, Avenida Francisco Mota, 572, CEP 59625-900 Mossoro, Rio Grande do Norte (Brazil); Nishimoto, Akio [Department of Chemistry and Materials Engineering, Faculty of Chemistry, Materials and Bioengineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680 (Japan)

    2015-07-15

    Cathodic cage plasma deposition (CCPD) was used for growing titanium nitride (TiN) and titanium dioxide (TiO{sub 2}) thin films on silicon substrates. The main advantages of the CCPD technique are the uniformity, tridimensionality, and high rate of the film deposition that occurs at higher pressures, lower temperatures, and lower treatment times than those used in conventional nitriding treatments. In this work, the influence of the temperature and gas atmosphere upon the characteristics of the deposited films was investigated. The TiN and TiO{sub 2} thin films were characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy to analyze their chemical, structural, and morphological characteristics, and the combination of these results indicates that the low-cost CCPD technique can be used to produce even and highly crystalline TiN and TiO{sub 2} films.

  11. TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness

    NARCIS (Netherlands)

    Van Hao, B.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.

    2012-01-01

    This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth

  12. Sputter-Deposited Indium–Tin Oxide Thin Films for Acetaldehyde Gas Sensing

    Directory of Open Access Journals (Sweden)

    Umut Cindemir

    2016-04-01

    Full Text Available Reactive dual-target DC magnetron sputtering was used to prepare In–Sn oxide thin films with a wide range of compositions. The films were subjected to annealing post-treatment at 400 °C or 500 °C for different periods of time. Compositional and structural characterizations were performed by X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, Rutherford backscattering and scanning electron microscopy. Films were investigated for gas sensing at 200 °C by measuring their resistance response upon exposure to acetaldehyde mixed with synthetic air. We found that the relative indium-to-tin content was very important and that measurable sensor responses could be recorded at acetaldehyde concentrations down to 200 ppb, with small resistance drift between repeated exposures, for both crystalline SnO2-like films and for amorphous films consisting of about equal amounts of In and Sn. We also demonstrated that it is not possible to prepare crystalline sensors with intermediate indium-to-tin compositions by sputter deposition and post-annealing up to 500 °C.

  13. Effect of substrate temperature and input power on TiN film deposition by low-frequency (60 Hz) PECVD

    CERN Document Server

    Kim, H T; Han, D H; Park, D K

    2000-01-01

    Titanium nitride (TiN) thin films were prepared by low-frequency (60 Hz) plasma-enhanced chemical-vapor deposition (LF-PECVD) using a mixture of TiCl sub 4 and N sub 2 as source materials and H sub 2 as an atmospheric material. The LF sub P ECVD can be used as a new method for process control at a lower deposition temperature, and the apparatus is simpler than others. The effects of the substrate temperature and the input power on the characteristics of the TiN films deposited by using LF-PECVD were investigated. The SEM results showed that the deposition rate increased as the substrate temperature and the input power increased. The crystalline TiN films had a strong crystallographically preferred orientation of (200) on the XRD patterns. The electrical resistivity of the TiN films had a tendency to decrease with increasing substrate temperature, but did not exhibit any unique tendency with increasing input power. The TiN films had high IR reflection and an edge in the visible region. The reflectance of the f...

  14. Deposit of thin films of TiN, a-C, Ti/TiN/a-C by laser ablation

    International Nuclear Information System (INIS)

    Mejia, I.S.; Escobar A, L.; Camps, E.; Romero, S.; Muhl, S.

    2006-01-01

    Thin films of titanium nitride (TiN), amorphous carbon (a-C), as well as bilayers of Ti/TiN/a-C were deposited by means of the laser ablation technique. It was investigated the effect that it has the laser fluence used to ablation the targets in the structure and mechanical properties of the TiN deposited films. The TiN obtained films have a preferential orientation in the direction (200). The results show that the hardness of this material is influenced by the laser fluence. It is observed that the hardness is increased in an approximately lineal way with the increment of the fluence up to 19 J/cm 2 . The films of amorphous carbon present hardness of the order of 11.2 GPa. Likewise it was found that the multilayers of Ti/TiN/aC presented a bigger hardness that of its individual components. (Author)

  15. Flexibility of the Indium Tin Oxide Transparent Conductive Film Deposited Onto the Plastic Substrate

    Directory of Open Access Journals (Sweden)

    Shao-Kai Lu

    2014-03-01

    Full Text Available In this study, we utilize the RF magnetron sputtering system to deposit the indium tin oxide (ITO conductive transparent film with low resistivity and high light transmittance to the polyethylene tetephthalate (PET plastic substrate and measure the film’s bending property and reliability at different tensile/compressive strain bending curvatures as well as the flexibility after cycling bending. The results show that the critical curvatures corresponded to the significant increase in the resistance of the 150 nm-thick ITO film deposited onto the PET substrate under tensile and compressive stress areO 14.1 mm and 5.4 mm, respectively. By observing the film’s surface crack and morphology, we can further discover that the critical curvature of the crack generated when the film is bent is quite consistent with the critical curvature at which the conductivity property degrades, and the film can withstand a higher compressive strain bending. In addition, the resistance and adhesion behavior of the film almost is unchanged after cycling bent for 1000 times with the curvature below the critical curvature.

  16. Opto-electronic properties of chromium doped indium-tin-oxide films deposited at room temperature

    International Nuclear Information System (INIS)

    Chang Weiche; Lee Shihchin; Yang Chihhao; Lin Tienchai

    2008-01-01

    Indium-tin-oxide (ITO) doped chromium films were deposited on Corning 7059 glass prepared by radio frequency (RF) magnetron sputtering under various levels of sputtering power for the chromium target. Experimental results show that the surface roughness slightly decreases by co-sputtering Cr. The pure ITO films deposited at room temperature were amorphous-like. At 15 W of chromium target power, the structure of ITO: Cr film mainly consists of (2 2 2) crystallization plane, with minority of (2 1 1), (4 4 0), (6 6 2) crystallization planes. The carrier concentration of the ITO films increases with increasing the doping of chromium, however the mobility of the carrier decreases. When the sputtering power of the chromium target is at 7.5 W, there has a maximum carrier mobility of 27.3 cm 2 V -1 s -1 , minimum carrier concentration of 2.47 x 10 20 cm -3 , and lowest resistivity of 7.32 x 10 -4 Ω cm. The transmittance of all the chromium doped ITO films at the 300-800 nm wavelength region in this experiment can reach up to 70-85%. In addition, the blue shift of UV-Vis spectrum is not observed with the increase of carrier concentration

  17. Characterization and Electrochemical Performance at High Discharge Rates of Tin Dioxide Thin Films Synthesized by Atomic Layer Deposition

    Science.gov (United States)

    Maximov, M. Yu.; Novikov, P. A.; Nazarov, D. V.; Rymyantsev, A. M.; Silin, A. O.; Zhang, Y.; Popovich, A. A.

    2017-11-01

    In this study, thin films of tin dioxide have been synthesized on substrates of silicon and stainless steel by atomic layer deposition (ALD) with tetraethyl tin and by inductively coupled remote oxygen plasma as precursors. Studies of the surface morphology by scanning electron microscopy show a strong dependence on synthesis temperature. According to the x-ray photoelectron spectroscopy measurements, the samples contain tin in the oxidation state +4. The thickness of the thin films for electrochemical performance was approximately 80 nm. Electrochemical cycling in the voltage range of 0.01-0.8 V have shown that tin oxide has a stable discharge capacity of approximately 650 mAh/g during 400 charge/discharge cycles with an efficiency of approximately 99.5%. The decrease in capacity after 400 charge/discharge cycles was around 5-7%. Synthesized SnO2 thin films have fast kinetics of lithium ions intercalation and excellent discharge efficiency at high C-rates, up to 40C, with a small decrease in capacity of less than 20%. Specific capacity and cyclic stability of thin films of SnO2 synthesized by ALD exceed the values mentioned in the literature for pure tin dioxide thin films.

  18. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Gudage, Y G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Ghosh, A [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Vyas, J C [Technical and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai (MS) (India); Singh, F [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Tripathi, A [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India)

    2008-02-07

    We have examined the effect of swift heavy ions using 100 MeV Au{sup 8+} ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10{sup -4} {omega} cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

  19. Tin dioxide sol-gel derived thin films deposited on porous silicon

    NARCIS (Netherlands)

    Cobianu, C.; Savaniu, Cristian; Buiu, Octavian; Zaharescu, Maria; Parlog, Constanta; van den Berg, Albert; Pecz, Bela; Dascula, Dan

    1996-01-01

    Undoped and Sb-doped SnO2 sol–gel derived thin films have been prepared for the first time from tin (IV) ethoxide precursor and SbCl3 in order to be utilised for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on

  20. Tin dioxide sol-gel derived thin films deposited on porous silicon

    NARCIS (Netherlands)

    Cobianu, C.; Savaniu, Cristian; Buiu, Octavian; Dascalu, Dan; Zaharescu, Maria; Parlog, Constanta; van den Berg, Albert; Pecz, Bela

    1997-01-01

    Undoped and Sb-doped SnO2 sol¿gel derived thin films have been prepared for the first time from tin (IV) ethoxide precursor and SbCl3 in order to be utilised for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on

  1. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Bae, J.W.; Kim, J.S.; Yeom, G.Y.

    2001-01-01

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  2. Deposition and stripping processes of tin on gold film electrodes studied by surface conductance

    International Nuclear Information System (INIS)

    Fonticelli, M.; Tucceri, R.I.; Posadas, D.

    2004-01-01

    The CV and surface conductance (SC) responses of tin species adsorbed on evaporated gold film electrodes were studied as a function of the potential window and the potential sweep rate. Sn adatoms were generated either, by reducing Sn(II) present in the solution (u p d) or by first irreversibly adsorbing Sn(II) and then reducing it in the supporting electrolyte alone. The experimental results show that at potentials about E ∼ -0.25 V(versus SCE), all the Sn(II) is reduced to Sn(0) and this species is adsorbed on the electrode surface. The subsequent oxidation of Sn(0) leads to Sn(II) ad , adsorbed on the electrode. This species desorbs only when the Sn(II) ad is further oxidised to soluble Sn(IV). The number of electrons involved in the reduction of Sn(II) to Sn(0) and vice versa is two. On the other hand, the analysis of the resistance measurements at low coverage is made by applying the surface Linde's rule. This leads to the conclusion that the Sn(0) behaves as an interstitial impurity. SC experiments, made in the potential region corresponding to Sn bulk deposition, suggest the formation of a bulk Sn-Au alloy

  3. Control of tin oxide film morphology by addition of hydrocarbons to the chemical vapour deposition process

    Czech Academy of Sciences Publication Activity Database

    Yates, H.M.; Evans, P.; Sheel, D.W.; Remeš, Zdeněk; Vaněček, Milan

    2010-01-01

    Roč. 519, č. 4 (2010), s. 1334-1340 ISSN 0040-6090 EU Projects: European Commission(XE) 214134 - N2P; European Commission(XE) 38885 - SE-POWERFOIL Institutional research plan: CEZ:AV0Z10100521 Keywords : alcohol * chemical vapour deposition * morphology * tin oxide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.909, year: 2010

  4. Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

    Science.gov (United States)

    Al-Mansoori, Muntaser; Al-Shaibani, Sahar; Al-Jaeedi, Ahlam; Lee, Jisung; Choi, Daniel; Hasoon, Falah S.

    2017-12-01

    Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

  5. Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

    Directory of Open Access Journals (Sweden)

    Muntaser Al-Mansoori

    2017-12-01

    Full Text Available Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2. The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF-sputtering system on the growth of intrinsic SnO2 (i-SnO2 layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

  6. Surface modification of cadmium sulfide thin film honey comb nanostructures: Effect of in situ tin doping using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, K.C., E-mail: wilsonphy@gmail.com [Department of Physics, Govt. Polytechnic College Kothamangalam, Chelad P O, Ernakulam, Kerala 686681 (India); Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India); Basheer Ahamed, M. [Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India)

    2016-01-15

    Graphical abstract: - Highlights: • Novel honey comb like cadmium sulfide thin film nanostructures prepared using chemical bath deposition on glass substrates. • Honey comb nanostructure found in two layers: an ultra thin film at bottom and well inter connected with walls of < 25 nm thick on top; hence maximum surface area possible for CdS nanostructure. • Shell size of the nanostructures and energy band gaps were controlled also an enhanced persistent conductivity observed on Sn doping. - Abstract: Even though nanostructures possess large surface to volume ratio compared to their thin film counterpart, the complicated procedure that demands for the deposition on a substrate kept them back foot in device fabrication techniques. In this work, a honey comb like cadmium sulfide (CdS) thin films nanostructure are deposited on glass substrates using simple chemical bath deposition technique at 65 °C. Energy band gaps, film thickness and shell size of the honey comb nanostructures are successfully controlled using tin (Sn) doping and number of shells per unit area is found to be maximum for 5% Sn doped (in the reaction mixture) sample. X-ray diffraction and optical absorption analysis showed that cadmium sulfide and cadmium hydroxide coexist in the samples. TEM measurements showed that CdS nanostructures are embedded in cadmium hydroxide just like “plum pudding”. Persistent photoconductivity measurements of the samples are also carried out. The decay constants found to be increased with increases in Sn doping.

  7. Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone.

    Science.gov (United States)

    Nanayakkara, Charith E; Liu, Guo; Vega, Abraham; Dezelah, Charles L; Kanjolia, Ravindra K; Chabal, Yves J

    2017-06-20

    Uniform and conformal deposition of tin oxide thin films is important for several applications in electronics, gas sensing, and transparent conducting electrodes. Thermal atomic layer deposition (ALD) is often best suited for these applications, but its implementation requires a mechanistic understanding of the initial nucleation and subsequent ALD processes. To this end, in situ FTIR and ex situ XPS have been used to explore the ALD of tin oxide films using tributyltin ethoxide and ozone on an OH-terminated, SiO 2 -passivated Si(111) substrate. Direct chemisorption of tributyltin ethoxide on surface OH groups and clear evidence that subsequent ligand exchange are obtained, providing mechanistic insight. Upon ozone pulse, the butyl groups react with ozone, forming surface carbonate and formate. The subsequent tributyltin ethoxide pulse removes the carbonate and formate features with the appearance of the bands for CH stretching and bending modes of the precursor butyl ligands. This ligand-exchange behavior is repeated for subsequent cycles, as is characteristic of ALD processes, and is clearly observed for deposition temperatures of 200 and 300 °C. On the basis of the in situ vibrational data, a reaction mechanism for the ALD process of tributyltin ethoxide and ozone is presented, whereby ligands are fully eliminated. Complementary ex situ XPS depth profiles confirm that the bulk of the films is carbon-free, that is, formate and carbonate are not incorporated into the film during the deposition process, and that good-quality SnO x films are produced. Furthermore, the process was scaled up in a cross-flow reactor at 225 °C, which allowed the determination of the growth rate (0.62 Å/cycle) and confirmed a self-limiting ALD growth at 225 and 268 °C. An analysis of the temperature-dependence data reveals that growth rate increases linearly between 200 and 300 °C.

  8. Characterization and Gas Sensing Properties of Copper-doped Tin Oxide Thin Films Deposited by Ultrasonic Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Zhaoxia ZHAI

    2016-05-01

    Full Text Available Tin oxide-based thin films are deposited by ultrasonic spray pyrolysis technology, in which Cu addition is introduced to enhance the gas sensing performance by H2S detection. The thin films are porous and comprise nano-sized crystallites. One of the Cu-containing thin film sensors demonstrates a fast and significant response to H2S gas. The values of power law exponent n are calculated to discuss the sensitivity of the sensors, which is significantly promoted by Cu additive. The sensitivity of Cu-doped SnO2 gas sensors is determined by two mechanisms. One is the normal gas sensing mechanism of SnO2 grains, and the other is the promoted mechanism caused by the transformation between CuO and CuS in the H2S detection. DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12917

  9. Ultra-Thin Atomic Layer Deposited TiN Films: Non-Linear I–V Behaviour and the Importance of Surface Passivation

    NARCIS (Netherlands)

    Van Hao, B.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    2011-01-01

    We report the electrical resistivity of atomic layer deposited TiN thin films in the thickness range 2.5-20 nm. The measurements were carried out using the circular transfer length method structures. For the films with thickness in the range of 10-20 nm, the measurements exhibited linear

  10. CO gas sensing by ultrathin tin oxide films grown by atomic layer deposition using transmission FTIR spectroscopy.

    Science.gov (United States)

    Du, X; Du, Y; George, S M

    2008-10-02

    Ultrathin tin oxide films were deposited on SiO2 nanoparticles using atomic layer deposition (ALD) techniques with SnCl4 and H2O2 as the reactants. These SnO(x) films were then exposed to O2 and CO gas pressure at 300 degrees C to measure and understand their ability to serve as CO gas sensors. In situ transmission Fourier transform infrared (FTIR) spectroscopy was used to monitor both the charge conduction in the SnO(x) films and the gas-phase species. The background infrared absorbance measured the electrical conductivity of the SnO(x) films based on Drude-Zener theory. O2 pressure was observed to decrease the SnO(x) film conductivity. Addition of CO pressure then increased the SnO(x) film conductivity. Static experiments also monitored the buildup of gas-phase CO2 reaction products as the CO reacted with oxygen species. These results were consistent with both ionosorption and oxygen-vacancy models for chemiresistant semiconductor gas sensors. Additional experiments demonstrated that O2 pressure was not necessary for the SnO(x) films to detect CO pressure. The background infrared absorbance increased with CO pressure in the absence of O2 pressure. These results indicate that CO can produce oxygen vacancies on the SnO(x) surface that ionize and release electrons that increase the SnO(x) film conductivity, as suggested by the oxygen-vacancy model. The time scale of the response of the SnO(x) films to O2 and CO pressure was also measured by using transient experiments. The ultrathin SnO(x) ALD films with a thickness of approximately 10 A were able to respond to O2 within approximately 100 s and to CO within approximately 10 s. These in situ transmission FTIR spectroscopy help confirm the mechanisms for chemiresistant semiconductor gas sensors.

  11. Laser scribing of indium tin oxide (ITO) thin films deposited on various substrates for touch panels

    Science.gov (United States)

    Tseng, Shih-Feng; Hsiao, Wen-Tse; Huang, Kuo-Cheng; Chiang, Donyau; Chen, Ming-Fei; Chou, Chang-Pin

    2010-12-01

    In this study, a Nd:YAG laser with wavelength of 1064 nm is used to scribe the indium tin oxide (ITO) thin films coated on three types of substrate materials, i.e. soda-lime glass, polycarbonate (PC), and cyclic-olefin-copolymer (COC) materials with thickness of 20 nm, 30 nm, and 20 nm, respectively. The effect of exposure time adjusted from 10 μs to 100 μs on the ablated mark width, depth, and electrical properties of the scribed film was investigated. The maximum laser power of 2.2 W was used to scribe these thin films. In addition, the surface morphology, surface reaction, surface roughness, optical properties, and electrical conductivity properties were measured by a scanning electron microscope, a three-dimensional confocal laser scanning microscope, an atomic force microscope, and a four-point probe. The measured results of surface morphology show that the residual ITO layer was produced on the scribed path with the laser exposure time at 10 μs and 20 μs. The better edge qualities of the scribed lines can be obtained when the exposure time extends from 30 μs to 60 μs. When the laser exposure time is longer than 60 μs, the partially burned areas of the scribed thin films on PC and COC substrates are observed. Moreover, the isolated line width and resistivity values increase when the laser exposure time increases.

  12. Deposit of thin films of TiN, a-C, Ti/TiN/a-C by laser ablation; Deposito de peliculas delgadas de TiN, a-C, Ti/TiN/a-C por ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Mejia, I.S.; Escobar A, L.; Camps, E.; Romero, S. [ININ, 52045 Ocoyoacac, Estado de mexico (Mexico); Muhl, S. [IIM, UNAM, A.P. 364, 01000 Mexico D.F. (Mexico)

    2006-07-01

    Thin films of titanium nitride (TiN), amorphous carbon (a-C), as well as bilayers of Ti/TiN/a-C were deposited by means of the laser ablation technique. It was investigated the effect that it has the laser fluence used to ablation the targets in the structure and mechanical properties of the TiN deposited films. The TiN obtained films have a preferential orientation in the direction (200). The results show that the hardness of this material is influenced by the laser fluence. It is observed that the hardness is increased in an approximately lineal way with the increment of the fluence up to 19 J/cm{sup 2}. The films of amorphous carbon present hardness of the order of 11.2 GPa. Likewise it was found that the multilayers of Ti/TiN/aC presented a bigger hardness that of its individual components. (Author)

  13. TiN thin film deposition by cathodic cage discharge: effect of cage configuration and active species

    International Nuclear Information System (INIS)

    De Freitas Daudt, N; Cavalcante Braz, D; Alves Junior, C; Pereira Barbosa, J C; Barbalho Pereira, M

    2012-01-01

    Plasma cathodic cage technique was developed recently in order to eliminate phenomena such as edge effects and overheating, which occur during conventional nitriding processes. In this work, the effect of plasma active species and cage configurations during thin film deposition of TiN were studied. This compound was chosen because its properties are very sensitive to slight variations in chemical composition and film thickness, becoming a good monitoring tool in fabrication process control. In order to verify the effect of cage geometry on the discharge and characteristics of the grown film, a cage made of titanium was used with different numbers and distribution of holes. Furthermore, different amounts of hydrogen were added to the Ar + N2 plasma atmosphere. Flow rates of Ar and N2 gas were fixed at 4 and 3 sccm, respectively and flow rates of H 2 gas was 0, 1 and 2 sccm. Plasma species, electrical discharge and physical characteristics of the grown film were analyzed by Optical Emission Spectroscopy (OES), Atomic Force Microscopy (AFM), X-Ray Diffraction. It was observed by OES that the luminous intensity associated to Hα species is not proportional to flow rate of H 2 gas. Electrical efficiency of the system, crystal structure and topography of the TiN film are strongly influenced by this behavior. For constant flow rate of H 2 gas, it was found that with more holes at the top of the cage, deposition rate, crystallinity and roughness are higher, if compared to cages with a small number of holes at the top of cage. On the other hand, the opposite behavior was observed when more holes were located at the sidewall of cage.

  14. Atomic layer deposition of TiN films : growth and electrical behavior down to sub-nanometer scale

    NARCIS (Netherlands)

    Van Hao, B.

    2013-01-01

    During the last several decades, titanium nitride (TiN) has gained much interest because of its low resistivity, chemical inertness and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Thin films of TiN are commonly used as diffusion barrier and gate material for CMOS

  15. On the role of tin doping in InOx thin films deposited by radio frequency-plasma enhanced reactive thermal evaporation.

    Science.gov (United States)

    Amaral, A; Brogueira, P; Lavareda, G; de Carvalho, C Nunes

    2010-04-01

    In view of the increasing need for larger-area display devices with improved image quality it becomes increasingly important to decrease resistivity while maintaining transparency in transparent conducting oxides (TCOs). Accomplishing the goal of increased conductivity and transparency will require a deeper understanding of the relationships between the structure and the electro-optical properties of these materials. In this work we study the role of tin doping in InOx thin films. Undoped indium oxide (InOx) and indium tin oxide (ITO) thin films were deposited at room temperature by radiofrequency plasma enhanced reactive thermal evaporation (rf-PERTE), a new technique recently developed in our laboratory using as evaporation source either In rods or a 90%In:10%Sn alloy, respectively. The two most important macroscopic properties-optical transparency and electrical resistivity-seem to be independent of the tin content in these deposition conditions. Results show that the films present a visible transmittance of the order of 82%, and an electrical resistivity of about 8 x 10(-4) omega x cm. Surface morphology characterization made by atomic force microscopy (AFM) showed that homogeneity of the films deposited from a 90%In:10%Sn alloy is enhanced (a film with small and compact grains is produced) and consequently a smooth surface with reduced roughness and with similar grain size and shape is obtained. Films deposited from pure In rods evaporation source show the presence of aggregates randomly distributed above a film tissue formed of thinner grains.

  16. Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition

    Directory of Open Access Journals (Sweden)

    Yue Wang

    2017-05-01

    Full Text Available BiFeO3/TiN/MgO (001 films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001-epitaxial BiFeO3 films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO3 films. Their crystallographic relationship is shown as following: tetragonal-BiFeO3 (001 [100]//TiN (001 [100]//MgO (001 [100] and rhombohedral-BiFeO3 (001 [100]//TiN (001 [100]//MgO (001 [100]. Besides, an oxidized TiN layer (∼ 20 nm has also been detected between BiFeO3 and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO3 layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO3 is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer.

  17. Nanocauliflower like structure of CdS thin film for solar cell photovoltaic applications: Insitu tin doping by chemical bath deposition technique

    CSIR Research Space (South Africa)

    Wilson, KC

    2014-01-01

    Full Text Available We report on surface morphology changes of in situ tin (Sn) doped cadmium sulphide (CdS) thin film nanostructures prepared on a glass substrate using the chemical bath deposition (CBD) technique. Sn-doping in the presence of triethanolammine (TEOA...

  18. IMPEDANCE SPECTROSCOPY OF POLYCRYSTALLINE TIN DIOXIDE FILMS

    Directory of Open Access Journals (Sweden)

    D. V. Adamchuck

    2016-01-01

    Full Text Available The aim of this work is the analysis of the influence of annealing in an inert atmosphere on the electrical properties and structure of non-stoichiometric tin dioxide films by means of impedance spectroscopy method. Non-stoichiometric tin dioxide films were fabricated by two-step oxidation of metallic tin deposited on the polycrystalline Al2O3 substrates by DC magnetron sputtering. In order to modify the structure and stoichiometric composition, the films were subjected to the high temperature annealing in argon atmosphere in temperature range 300–800 °С. AC-conductivity measurements of the films in the frequency range 20 Hz – 2 MHz were carried out. Variation in the frequency dependencies of the real and imaginary parts of the impedance of tin dioxide films was found to occur as a result of high-temperature annealing. Equivalent circuits for describing the properties of films with various structure and stoichiometric composition were proposed. Possibility of conductivity variation of the polycrystalline tin dioxide films as a result of аnnealing in an inert atmosphere was demonstrated by utilizing impedance spectroscopy. Annealing induces the recrystallization of the films, changing in their stoichiometry as well as increase of the sizes of SnO2 crystallites. Variation of electrical conductivity and structure of tin dioxide films as a result of annealing in inert atmosphere was confirmed by X-ray diffraction analysis. Analysis of the impedance diagrams of tin dioxide films was found to be a powerful tool to study their electrical properties. 

  19. Growth and characterization of tin sulphide thin films by chemical bath deposition using ethylene diamine tetra-acetic acid as the complexing agent

    Energy Technology Data Exchange (ETDEWEB)

    Jayasree, Y.; Chalapathi, U.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

    2013-06-30

    Tin sulphide (SnS), a promising, non-toxic and low-cost solar cell absorber layer, is grown using Chemical Bath Deposition technique at room temperature. The effects of concentration of ethlene diamine tetra-acetic acid, the complexing agent in the starting solution, as well as thioacetamide, the source of sulphur, on the growth of tin sulphide films are investigated to obtain single phase SnS films. The films deposited under optimized conditions are found to be near-stoichiometric, single phase SnS with orthorhombic structure. The lattice parameters are found to be a = 0.428 nm, b = 1.141 nm and c = 0.396 nm. The direct optical band gap of these films is found to be 1.55 eV. - Highlights: • Growth of SnS, a potential solar cell absorber layer, by chemical bath deposition • Ethylenediaminetetraacetic acid (EDTA) as complexing agent for SnS film growth • Effect of EDTA concentration on the growth and properties of tin sulphide films • Effect of thioacetamide concentration on the growth and properties of films • X-ray diffraction and Raman Spectra studies for phase analysis.

  20. Hydrogenation behavior of Ti-implanted Zr-1Nb alloy with TiN films deposited using filtered vacuum arc and magnetron sputtering

    Science.gov (United States)

    Kashkarov, E. B.; Nikitenkov, N. N.; Sutygina, A. N.; Bezmaternykh, A. O.; Kudiiarov, V. N.; Syrtanov, M. S.; Pryamushko, T. S.

    2018-02-01

    More than 60 years of operation of water-cooled reactors have shown that local or general critical hydrogen concentration is one of the basic limiting criteria of zirconium-based fuel element claddings. During the coolant radiolysis, released hydrogen penetrates and accumulates in zirconium alloys. Hydrogenation of zirconium alloys leads to degradation of their mechanical properties, hydride cracking and stress corrosion cracking. In this research the effect of titanium nitride (TiN) deposition on hydrogenation behavior of Ti-implanted Zr-1Nb alloy was described. Ti-implanted interlayer was fabricated by plasma immersion ion implantation (PIII) at the pulsed bias voltage of 1500 V to improve the adhesion of TiN and reduce hydrogen penetration into Zr-1Nb alloy. We conducted the comparative analysis on hydrogenation behavior of the Ti-implanted alloy with sputtered and evaporated TiN films by reactive dc magnetron sputtering (dcMS) and filtered cathodic vacuum arc deposition (FVAD), respectively. The crystalline structure and surface morphology were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The elemental distribution was analyzed using glow-discharge optical emission spectroscopy (GD-OES). Hydrogenation was performed from gas atmosphere at 350 °C and 2 atm hydrogen pressure. The results revealed that TiN films as well as Ti implantation significantly reduce hydrogen absorption rate of Zr-1Nb alloy. The best performance to reduce the rate of hydrogen absorption is Ti-implanted layer with evaporated TiN film. Morphology of the films impacted hydrogen permeation through TiN films: the denser film the lower hydrogen permeation. The Ti-implanted interface plays an important role of hydrogen accumulation layer for trapping the penetrated hydrogen. No deterioration of adhesive properties of TiN films on Zr-1Nb alloy with Ti-implanted interface occurs under high-temperature hydrogen exposure. Thus, the fabrication of Ti

  1. Synthesis, Deposition, and Microstructure Development of Thin Films Formed by Sulfidation and Selenization of Copper Zinc Tin Sulfide Nanocrystals

    Science.gov (United States)

    Chernomordik, Boris David

    Significant reduction in greenhouse gas emission and pollution associated with the global power demand can be accomplished by supplying tens-of-terawatts of power with solar cell technologies. No one solar cell material currently on the market is poised to meet this challenge due to issues such as manufacturing cost, material shortage, or material toxicity. For this reason, there is increasing interest in efficient light-absorbing materials that are comprised of abundant and non-toxic elements for thin film solar cell. Among these materials are copper zinc tin sulfide (Cu2ZnSnS4, or CZTS), copper zinc tin selenide (Cu2ZnSnSe4, or CZTSe), and copper zinc tin sulfoselenide alloys [Cu2ZnSn(SxSe1-x )4, or CZTSSe]. Laboratory power conversion efficiencies of CZTSSe-based solar cells have risen to almost 13% in less than three decades of research. Meeting the terawatt challenge will also require low cost fabrication. CZTSSe thin films from annealed colloidal nanocrystal coatings is an example of solution-based methods that can reduce manufacturing costs through advantages such as high throughput, high material utilization, and low capital expenses. The film microstructure and grain size affects the solar cell performance. To realize low cost commercial production and high efficiencies of CZTSSe-based solar cells, it is necessary to understand the fundamental factors that affect crystal growth and microstructure evolution during CZTSSe annealing. Cu2ZnSnS4 (CZTS) nanocrystals were synthesized via thermolysis of single-source cation and sulfur precursors copper, zinc and tin diethyldithiocarbamates. The average nanocrystal size could be tuned between 2 nm and 40 nm, by varying the synthesis temperature between 150 °C and 340 °C. The synthesis is rapid and is completed in less than 10 minutes. Characterization by X-ray diffraction, Raman spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy confirm that the nanocrystals are nominally

  2. A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions

    Directory of Open Access Journals (Sweden)

    Angshuman Deka

    2013-06-01

    Full Text Available ZnO films have been grown via a vapour phase transport (VPT on soda lime glass (SLG and indium-tin oxide (ITO coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C–O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO.

  3. Structural, electrical and optical properties of indium tin oxide thin film grown by metal organic chemical vapor deposition with tetramethyltin-precursor

    Science.gov (United States)

    Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Wang, Gang

    2018-01-01

    Tin-doped indium oxide (ITO) is grown by metal organic chemical vapor deposition (MOCVD) using tetramethyltin (TDMASn) as tin precursor. The as-grown ITO films are polycrystalline with (111) and (100) textures. A gradual transition of crystallographic orientation from (111) preferred to (100) preferred is observed as the composition of tin changes. By precisely controlling the Sn doping, the ITO thin films present promising optical and electrical performances at either near-infrared-visible or visible-near-ultraviolet ranges. At low Sn doping level, the as-grown ITO possesses high electron mobility of 48.8 cm2 V‑1 s‑1, which results in high near-infrared transmittance and low resistivity. At higher Sn doping level, high carrier concentration (8.9 × 1020 cm‑3) and low resistivity (3 × 10‑4 Ω cm) are achieved. The transmittance is 97.8, 99.1, and 82.3% at the wavelength of 550, 365, and 320 nm, respectively. The results strongly suggest that MOCVD with TDMASn as tin precursor is an effective method to fabricate high quality ITO thin film for near-infrared, visible light, and near-ultraviolet application.

  4. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2-Ar sputtering gas mixture

    Science.gov (United States)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; de Andrés, A.; Prieto, C.

    2015-07-01

    The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H2 in the gas mixture of H2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H2/(Ar + H2) ratio in the range of 0.3-0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, ΦTC = T10/RS, than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices.

  5. Electrochemical deposition of Zn{sub 3}P{sub 2} thin film semiconductors on tin oxide substrates

    Energy Technology Data Exchange (ETDEWEB)

    Soliman, M.; Kashyout, A.B.; Osman, M.; El-Gamal, M. [Alexandria University (Egypt). Institute of Graduate Studies and Research

    2005-10-01

    Zn{sub 3}P{sub 2} semiconductor thin films were prepared by electrodeposition technique form aqueous solutions. The deposition mechanism was investigated by cyclic voltammetry technique. Crystal structure, morphology and composition of as deposited and annealed Zn{sub 3}P{sub 2} thin films grown on SnO{sub 2}/glass substrates were determined by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis. X-ray diffraction data indicated the formation of Zn{sub 3}P{sub 2} as the predominant phase for both as-deposited and annealed films. The compositions of the deposited films were controlled by the bath temperature, deposition potential and Zn/P ratio in the solution. The dark current-voltage measurements of SnO{sub 2}/Zn{sub 3}P{sub 2}/C devices indicated a rectifying behavior and a reverse saturation current density of 1.7 x 10{sup -7} A/cm{sup 2}, which is in good accordance with that obtained from films prepared using vacuum technique. Also, the capacitance-voltage measurements showed that the number of interface states and the built in potential are in the order of 5 x 10{sup -9} cm{sup -3} and 0.85 V, respectively. These preliminary results for Zn{sub 3}P{sub 2} thin films reveal that, this semiconductor material can be used for solar cell applications. (author)

  6. Dense CdS thin films on fluorine-doped tin oxide coated glass by high-rate microreactor-assisted solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Su, Yu-Wei, E-mail: suyuweiwayne@gmail.com [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ramprasad, Sudhir [Energy Processes and Materials Division, Pacific Northwest National Laboratory, Corvallis, OR 9730 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Han, Seung-Yeol; Wang, Wei [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ryu, Si-Ok [School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeonsan, Gyeongbuk 712-749 (Korea, Republic of); Palo, Daniel R. [Barr Engineering Co., Hibbing, MN 55747 (United States); Paul, Brian K. [School of Mechanical, Industrial and Manufacturing Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Chang, Chih-hung [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States)

    2013-04-01

    Continuous microreactor-assisted solution deposition is demonstrated for the deposition of CdS thin films on fluorine-doped tin oxide (FTO) coated glass. The continuous flow system consists of a microscale T-junction micromixer with the co-axial water circulation heat exchanger to control the reacting chemical flux and optimize the heterogeneous surface reaction. Dense, high quality nanocrystallite CdS thin films were deposited at an average rate of 25.2 nm/min, which is significantly higher than the reported growth rate from typical batch chemical bath deposition process. Focused-ion-beam was used for transmission electron microscopy specimen preparation to characterize the interfacial microstructure of CdS and FTO layers. The band gap was determined at 2.44 eV by UV–vis absorption spectroscopy. X-ray photon spectroscopy shows the binding energies of Cd 3d{sub 3/2}, Cd 3d{sub 5/2}, S 2P{sub 3/2} and S 2P{sub 1/2} at 411.7 eV, 404.8 eV, 162.1 eV and 163.4 eV, respectively. - Highlights: ► CdS films deposited using continuous microreactor-assisted solution deposition (MASD) ► Dense nanocrystallite CdS films can be reached at a rate of 25.2 [nm/min]. ► MASD can approach higher film growth rate than conventional chemical bath deposition.

  7. Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N.; Sharma, V.; Padha, N. [Department of Physics and Electronics, Dr. Ambedkar Road, University of Jammu, Jammu-180 006, Jammu and Kashmir State (India); Shah, N.M.; Desai, M.S.; Panchal, C.J. [Applied Physics Department, Faculty of Technology and Engineering, M. S. University of Baroda, Vadodara-390 001, Gujarat State (India); Protsenko, I.Yu. [Appl. Physics Dept., Faculty of Electronic and Information Technologies, Sumy State University (Ukraine)

    2010-01-15

    Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350-550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (T{sub s}) on the structural, morphological, optical, and electrical properties of the films were investigated using x-ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall-effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80-330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all T{sub s}. With the increase of T{sub s} the intensity of the diffraction peaks increased and well-resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38-1.18 eV. Hall-effect measurements revealed the resistivity of films in the range 112-20 {omega} cm for films deposited at different T{sub s}. The activation energy for films deposited at different T{sub s} was in the range of 0.14 eV-0.28 eV as derived from the analysis of the data of low-temperature resistivity measurements. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Low-temperature growth of highly crystallized transparent conductive fluorine-doped tin oxide films by intermittent spray pyrolysis deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fukano, Tatsuo; Motohiro, Tomoyoshi [Toyota Central Research and Development Laboratories Inc., Nagakute, Aichi 480-1192 (Japan)

    2004-05-30

    Following the procedure by Sawada et al. (Thin Solid Films 409 (2002) 46), high-quality SnO{sub 2}:F films were grown on glass substrates at relatively low temperatures of 325-340C by intermittent spray pyrolysis deposition using a perfume atomizer for cosmetics use. Even though the substrate temperature is low, as-deposited films show a high optical transmittance of 92% in the visible range, a low electric resistivity of 5.8x10{sup -4}{omega}cm and a high Hall mobility of 28cm{sup 2}/Vs. The F/Sn atomic ratio (0.0074) in the films is low in comparison with the value (0.5) in the sprayed solution. The carrier density in the film is approximately equal to the F-ion density, suggesting that most of the F-ions effectively function as active dopants. Films' transmittance and resistivity show little change after a 450C 60min heat treatment in the atmosphere, evidencing a high heat resistance. The SnO{sub 2}:F films obtained in this work remove the difficulty to improve the figure of merit at low synthesis temperatures.

  9. Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Jephias Gwamuri

    2016-01-01

    Full Text Available The opportunity for substantial efficiency enhancements of thin film hydrogenated amorphous silicon (a-Si:H solar photovoltaic (PV cells using plasmonic absorbers requires ultra-thin transparent conducting oxide top electrodes with low resistivity and high transmittances in the visible range of the electromagnetic spectrum. Fabricating ultra-thin indium tin oxide (ITO films (sub-50 nm using conventional methods has presented a number of challenges; however, a novel method involving chemical shaving of thicker (greater than 80 nm RF sputter deposited high-quality ITO films has been demonstrated. This study investigates the effect of oxygen concentration on the etch rates of RF sputter deposited ITO films to provide a detailed understanding of the interaction of all critical experimental parameters to help create even thinner layers to allow for more finely tune plasmonic resonances. ITO films were deposited on silicon substrates with a 98-nm, thermally grown oxide using RF magnetron sputtering with oxygen concentrations of 0, 0.4 and 1.0 sccm and annealed at 300 °C air ambient. Then the films were etched using a combination of water and hydrochloric and nitric acids for 1, 3, 5 and 8 min at room temperature. In-between each etching process cycle, the films were characterized by X-ray diffraction, atomic force microscopy, Raman Spectroscopy, 4-point probe (electrical conductivity, and variable angle spectroscopic ellipsometry. All the films were polycrystalline in nature and highly oriented along the (222 reflection. Ultra-thin ITO films with record low resistivity values (as low as 5.83 × 10−4 Ω·cm were obtained and high optical transparency is exhibited in the 300–1000 nm wavelength region for all the ITO films. The etch rate, preferred crystal lattice growth plane, d-spacing and lattice distortion were also observed to be highly dependent on the nature of growth environment for RF sputter deposited ITO films. The structural, electrical

  10. Pulsed Nd:YAG laser deposition of indium tin oxide thin films in different gases and organic light emitting device applications

    Energy Technology Data Exchange (ETDEWEB)

    Yong, T.Y. [Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia); Tou, T.Y. [Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia)], E-mail: tytou@mmu.edu.my; Yow, H.K. [Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia); Safran, G. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, 1121 Konkoly-Thege ut 29-33, Budapest XII (Hungary)

    2008-04-30

    The microstructures, electrical and optical properties of indium-doped tin oxide (ITO) films, deposited on glass substrates in different background gases by a pulsed Nd:YAG laser, were characterized. The optimal pressure for obtaining the lowest resistivity in ITO thin film is inversely proportional to the molecular weight of the background gases, namely the argon (Ar), oxygen (O{sub 2}), nitrogen (N{sub 2}) and helium (He). While substrate heating to 250 deg. C decreased the ITO resistivity to < 4 x 10{sup -4} {omega} cm, obtaining the optical transmittance of higher than 90% depended mainly on the background gas pressure for O{sub 2} and Ar. Obtaining the lowest ITO resistivity, however, did not beget a high optical transmittance for ITO deposition in N{sub 2} and He. Scanning electron microscope pictures show distinct differences in microstructures due to the background gas: nanostructures when using Ar and N{sub 2} but polycrystalline for using O{sub 2} and He. The ITO surface roughness varied with the deposition distance. The effects on the molecularly doped, single-layer organic light emitting device (OLED) operation and performance were also investigated. Only ITO thin films prepared in O{sub 2} and Ar are suitable for the fabrication OLED with performance comparable to that fabricated on the commercially available, magnetron-sputtered ITO.

  11. Electrochemical Characterization of Nanoporous Nickel Oxide Thin Films Spray-Deposited onto Indium-Doped Tin Oxide for Solar Conversion Scopes

    Directory of Open Access Journals (Sweden)

    Muhammad Awais

    2015-01-01

    Full Text Available Nonstoichiometric nickel oxide (NiOx has been deposited as thin film utilizing indium-doped tin oxide as transparent and electrically conductive substrate. Spray deposition of a suspension of NiOx nanoparticles in alcoholic medium allowed the preparation of uniform NiOx coatings. Sintering of the coatings was conducted at temperatures below 500°C for few minutes. This scalable procedure allowed the attainment of NiOx films with mesoporous morphology and reticulated structure. The electrochemical characterization showed that NiOx electrodes possess large surface area (about 1000 times larger than their geometrical area. Due to the openness of the NiOx morphology, the underlying conductive substrate can be contacted by the electrolyte and undergo redox processes within the potential range in which NiOx is electroactive. This requires careful control of the conditions of polarization in order to prevent the simultaneous occurrence of reduction/oxidation processes in both components of the multilayered electrode. The combination of the open structure with optical transparency and elevated electroactivity in organic electrolytes motivated us to analyze the potential of the spray-deposited NiOx films as semiconducting cathodes of dye-sensitized solar cells of p-type when erythrosine B was the sensitizer.

  12. Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

    Energy Technology Data Exchange (ETDEWEB)

    Warner, Ellis J.; Gladfelter, Wayne L., E-mail: wlg@umn.edu [Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Johnson, Forrest; Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2015-03-15

    Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. % Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.

  13. Studies on tin oxide films prepared by electron beam evaporation ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Transparent conducting tin oxide thin films have been prepared by electron beam evaporation and spray pyrolysis methods. Structural, optical and electrical properties were studied under different pre- paration conditions like substrate temperature, solution flow rate and rate of deposition. Resistivity of un-.

  14. Studies on tin oxide films prepared by electron beam evaporation ...

    Indian Academy of Sciences (India)

    Transparent conducting tin oxide thin films have been prepared by electron beam evaporation and spray pyrolysis methods. Structural, optical and electrical properties were studied under different preparation conditions like substrate temperature, solution flow rate and rate of deposition. Resistivity of undoped evaporated ...

  15. The Pemali tin deposit, Bangka, Indonesia

    Science.gov (United States)

    Schwartz, M. O.; Surjono

    1991-04-01

    The Pemali tin deposit is located in a Triassic granite pluton the magmatic evolution of which is characterized by a decrease of compatible Ca, Mg, Ti, P and Zr in the sequence: medium- to coarse-grained biotite granite, megacrystic medium-grained biotite granite, two-mica granite/muscovite granite. The tin mineralization is confined to the two-mica granite and consists of disseminated cassiterite as well as greisen-bordered veins. The highly evolved muscovite granite is tin-barren and is distinguished from the two-mica granite by its low mica content and low loss-on-ignition values. The fluid inclusions in quartz and fluorite of the two-mica granite and of the greisen homogenize in the 115 410 °C temperature range; the salinities are in the range of 0.4 23 equiv wt% NaCl and the CO2 concentrations are < 2 mole%.

  16. Influence of Microstructure on the Electrical Properties of Heteroepitaxial TiN Films

    Science.gov (United States)

    Xiang, Wenfeng; Liu, Yuan; Zhang, Jiaqi

    2018-03-01

    Heteroepitaxial TiN films were deposited on Si substrates by pulse laser deposition at different substrate temperature. The microstructure and surface morphology of the films were investigated by X-ray diffraction (θ-2θ scan, ω-scan, and ϕ-scan) and atomic force microscopy. The electrical properties of the prepared TiN films were studied using a physical property measurement system. The experimental results showed that the crystallinity and surface morphology of the TiN films were improved gradually with increasing substrate temperature below 700 °C. Specially, single crystal TiN films were prepared when substrate temperature is above 700 °C; However, the quality of TiN films gradually worsened when the substrate temperature was increased further. The electrical properties of the films were directly correlated to their crystalline quality. At the optimal substrate temperature of 700 °C, the TiN films exhibited the lowest resistivity and highest mobility of 25.7 μΩ cm and 36.1 cm2/V s, respectively. In addition, the mechanism concerning the influence of substrate temperature on the microstructure of TiN films is discussed in detail.

  17. Tin

    Science.gov (United States)

    Kamilli, Robert J.; Kimball, Bryn E.; Carlin, James F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Tin (Sn) is one of the first metals to be used by humans. Almost without exception, tin is used as an alloy. Because of its hardening effect on copper, tin was used in bronze implements as early as 3500 B.C. The major uses of tin today are for cans and containers, construction materials, transportation materials, and solder. The predominant ore mineral of tin, by far, is cassiterite (SnO2).In 2015, the world’s total estimated mine production of tin was 289,000 metric tons of contained tin. Total world reserves at the end of 2016 were estimated to be 4,700,000 metric tons. China held about 24 percent of the world’s tin reserves and accounted for 38 percent of the world’s 2015 production of tin.The proportion of scrap used in tin production is between 10 and 25 percent. Unlike many metals, tin recycling is relatively efficient, and the fraction of tin in discarded products that get recycled is greater than 50 percent.Only about 20 percent of the world’s identified tin resources occur as primary hydrothermal hard-rock veins, or lodes. These lodes contain predominantly high-temperature minerals and almost invariably occur in close association with silicic, peraluminous granites. About 80 percent of the world’s identified tin resources occur as unconsolidated secondary or placer deposits in riverbeds and valleys or on the sea floor. The largest concentration of both onshore and offshore placers is in the extensive tin belt of Southeast Asia, which stretches from China in the north, through Thailand, Burma (also referred to as Myanmar), and Malaysia, to the islands of Indonesia in the south. Furthermore, tin placers are almost always found closely allied to the granites from which they originate. Other countries with significant tin resources are Australia, Bolivia, and Brazil.Most hydrothermal tin deposits belong to what can be thought of as a superclass of porphyry-greisen deposits. The hydrothermal tin deposits are all characterized by a close spatial

  18. Properties of combined TiN and Pt thin films applied to gas sensing

    CERN Document Server

    Aabom, A E; Eriksson, M; Twesten, R D

    2002-01-01

    TiN was introduced as a part of the sensing layer of gas sensitive metal-insulator-semiconductor (MIS) devices. Three types of metallic gate layer structures deposited by magnetron sputtering were investigated: TiN, a double layer with Pt on top of TiN, and two-phase Pt-TiN films formed by co-sputtering. The homogeneity of the co-sputtered layer was strongly dependent on the substrate temperature during film growth, with segregation of Pt as a result of high temperature deposition. During the deposition conditions in this work, Pt and TiN appear to be immiscible, resulting in growth of films consisting of the two phases. Furthermore, surface oxidation of TiN and enhanced oxidation of TiN at the grain boundaries to Pt in both the as-deposited films after exposure to atmosphere at room temperature and the films subjected to MIS device processing and to gas response analyses at a temperature of 140 deg. C resulted in a three-phase TiN-TiO sub x -Pt system. A segregation of Pt to the growth surface was observed d...

  19. Organic thin film transistors with indium tin oxide bottom electrode

    International Nuclear Information System (INIS)

    Han, Chang-Wook; Shin, Hee-Sun; Park, Joong-Hyun; Han, Min-Koo; Pang, Hee-Suk; Kim, Ki-Yong; Chung, In-Jae; Pyo, Sang-Woo; Lee, Dong-Hyun; Kim, Young-Kwan

    2006-01-01

    Organic thin film transistors (OTFTs) which employ indium tin oxide (ITO) as source and drain electrodes instead of gold are fabricated. A double gate dielectric layer was used, which consists of benzocyclobutane (BCB) and silicon nitride (SiN x ). The pentacene TFT has lateral dimensions 192 μmx6 μm. The OTFT with the ITO bottom electrode shows a saturation mobility of 0.05∼0.09 cm 2 V -1 s -1 and an on-off current ratio of the order of 10 5 in a gate voltage span between 0 and -40 V. The TFT fabrication process steps had the beneficial side effect of changing the ITO surface from hydrophilic to hydrophobic. This change allows pentacene films with larger grains, observed up to 0.5 μm, to be grown on TFT compared to as-deposited ITO film onto which high quality films cannot be grown

  20. Thin-film encapsulation of inverted indium-tin-oxide-free polymer solar cells by atomic layer deposition with improvement on stability and efficiency

    Science.gov (United States)

    Li, Kan; Fan, Huanhuan; Huang, Chaofan; Hong, Xia; Fang, Xu; Li, Haifeng; Liu, Xu; Li, Chengshuai; Huang, Zhuoyin; Zhen, Hongyu

    2012-12-01

    Atomic layer deposition (ALD) technology is employed to encapsulate inverted indium-tin-oxide-free polymer solar cells (IFSCs) with a structure of Al/TiOx/P3HT:PC61BM/PEDOT:PSS. The encapsulation layer, Al2O3, is deposited by ALD on the light incident surface. The thickness of the Al2O3 layer can thus be optimized through optical simulation to minimize light loss of IFSCs. Based on optical calculation, we encapsulated the device (85 nm thick active layer) with a 30 nm thick Al2O3 layer. The resulting ALD encapsulated IFSCs show much better device performance and higher stability than the glass-encapsulated ones.

  1. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

    International Nuclear Information System (INIS)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; Andrés, A. de; Prieto, C.

    2015-01-01

    Highlights: • ITO deposition on glass and PET at room temperature by using H. • High transparency and low resistance is obtained by tuning the H. • The figure of merit for ITO films on PET becomes maximal for thickness near 100 nm. - Abstract: The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H 2 in the gas mixture of H 2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H 2 /(Ar + H 2 ) ratio in the range of 0.3–0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, Φ TC = T 10 /R S , than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices

  2. The effect of substrate temperature on atomic layer deposited zinc tin oxide

    International Nuclear Information System (INIS)

    Lindahl, Johan; Hägglund, Carl; Wätjen, J. Timo; Edoff, Marika; Törndahl, Tobias

    2015-01-01

    Zinc tin oxide (ZTO) thin films were deposited on glass substrates by atomic layer deposition (ALD), and the film properties were investigated for varying deposition temperatures in the range of 90 to 180 °C. It was found that the [Sn]/([Sn] + [Zn]) composition is only slightly temperature dependent, while properties such as growth rate, film density, material structure and band gap are more strongly affected. The growth rate dependence on deposition temperature varies with the relative number of zinc or tin containing precursor pulses and it correlates with the growth rate behavior of pure ZnO and SnO x ALD. In contrast to the pure ZnO phase, the density of the mixed ZTO films is found to depend on the deposition temperature and it increases linearly with about 1 g/cm 3 in total over the investigated range. Characterization by transmission electron microscopy suggests that zinc rich ZTO films contain small (~ 10 nm) ZnO or ZnO(Sn) crystallites embedded in an amorphous matrix, and that these crystallites increase in size with increasing zinc content and deposition temperature. These crystallites are small enough for quantum confinement effects to reduce the optical band gap of the ZTO films as they grow in size with increasing deposition temperature. - Highlights: • Zinc tin oxide thin films were deposited by atomic layer deposition. • The structure and optical properties were studied at different growth temperatures. • The growth temperature had only a small effect on the composition of the films. • Small ZnO or ZnO(Sn) crystallites were observed by TEM in zinc rich ZTO films. • The growth temperature affects the crystallite size, which influences the band gap

  3. Amorphous tin-cadmium oxide films and the production thereof

    Science.gov (United States)

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  4. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post-deposition

  5. Tin dioxide nanostructured thin films obtained through polymeric precursor method

    Directory of Open Access Journals (Sweden)

    Marcelo Antônio Dal Santos

    2012-11-01

    Full Text Available Tin dioxide (SnO2 nanostructured thin films with low proportion of defects and low roughness were produced through the systematic control of temperature and viscosity of the precursor solutions used for thin films deposition. These solutions were obtained through the citrate method and the films were deposited through the ‘dip-coating’ technique on glass substrate and after thermal treatment at 470ºC/4h, they were characterized both structurally and morphologically through the X-ray diffractometry, optic microscopy, scanning electronic microscopy, atomic force microscopy, X-ray fluorescence, UV-Vis absorption spectroscopy and X-ray excited photoelectrons spectroscopy. The film thickness was obtained through scanning electronic microscopy of the films cross-section and correlated to the proportion of Sn and Si obtained through X-ray fluorescence. X-ray diffractometry of the films revealed the presence of peaks corresponding to the SnO2 crystalline phase, overlapping a wide peak between 20 and 30º (2?, characteristic of the glass substrate. Optic microscopy, Scanning electronic microscopy and atomic force microscopy revealed homogeneous films, with low roughness, suitable to several applications such as sensors and transparent electrodes. It could be observed through the UV-Vis absorption analysis that the films presented high optical transparency and ‘band gap’ energy 4.36 eV. The X-ray excited photoelectron spectroscopy confirmed the presence of SnO2, as well as traces of the elements present in the glass substrate and residual carbon from the thermal treatment of the films.

  6. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  7. Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone

    Energy Technology Data Exchange (ETDEWEB)

    Kannan Selvaraj, Sathees [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Feinerman, Alan [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Departments of Bioengineering and Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

    2014-01-15

    In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1 ± 0.01 nm/cycle within the wide ALD temperature window of 175–300 °C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3 Ω cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

  8. PHOTOELECTRIC AND PHOTOMAGNETIC RESPONSE OF INDIUM-TIN OXIDE FILMS

    Directory of Open Access Journals (Sweden)

    I. K. Meshkovsky

    2015-11-01

    Full Text Available Subject of Research. The goal of the present research is investigation of photoelectric and photomagnetic response of ITO (indium-tin oxide films under UV laser irradiation. Method. The ITO films were prepared by magnetron sputtering with the thickness equal to 300nm. The films were irradiated by UV laser light with 248 nm wavelength in laser pulse energy range from 10 mJ to 150 mJ by KrF excimer laser. Metallic electrodes were deposited on the films. Information about the films surface topography was obtained by atomic force microscopy and scanning electron microscopy. The film structure was investigated by X-ray diffraction. Main Results. It was shown that voltage appears between metallic contacts under the UV light effect. The electric current was observed through resistive load. The anisotropy of electric field producing photoelectric response was demonstrated for the first time. The appearance of magnetic field under the laser light irradiation was observed for the first time. The dependence of the response voltage on the laser pulse energy was linear over the whole measured energy range. The following physical mechanism was proposed for description of the observed phenomenon: electric voltage is associated with non-uniform distribution of the average crystallite size along the film surface, and, therefore, with mean free path of the charge carriers along the film surface. Photomagnetic response could be associated with collective behavior of the large number of charged particles, created due to high intensity laser irradiation. Practical Relevance. The phenomenon being studied could be applied for creation of new optoelectronic devices, for example, modulators, optical detectors, etc. Particularly, due to linear dependence of photoelectric response on the laser pulse energy, this phenomenon is attractive for manufacturing of simple and cheap excimer laser pulse energy detectors.

  9. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  10. Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

    Science.gov (United States)

    Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-07-01

    In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

  11. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    Science.gov (United States)

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid

    2015-08-01

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm2/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  12. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid, E-mail: amsiddiqui@jmi.ac.in [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  13. Nanocrystalline SnO2 formation by oxygen ion implantation in tin thin films

    Science.gov (United States)

    Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

    2018-03-01

    Metallic tin thin films of thickness 100 nm are deposited on fused silica substrates by thermal evaporation technique. These films are implanted with 45 keV oxygen ions at fluences ranging from 5 × 1015 to 5 × 1016 ions cm-2. The energy of the oxygen ions is calculated using SRIM in order to form embedded phases at the film-substrate interface. Post-implantation, films are annealed using a tube furnace for nanocrystalline tin oxide formation. These films are characterized using x-ray diffraction, Raman spectroscopy, UV-vis spectroscopy and photoluminescence spectroscopy. XRD and Raman spectroscopy studies reveal the formation of single rutile phase of SnO2. The size of the nanocrystallites formed decreases with an increase in the ion fluence. The nanocrystalline SnO2 formation is also confirmed by UV-vis and photoluminescence spectroscopy.

  14. Proton microprobe study of tin-polymetallic deposits

    Energy Technology Data Exchange (ETDEWEB)

    Murao, S. [Geological Survey of Japan, Tsukuba, Ibaraki (Japan); Sie, S.H.; Suter, G.F. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1996-12-31

    Tin-polymetallic vein type deposits are a complex mixture of cassiterite and sulfides and they are the main source of technologically important rare metals such as indium and bismuth. Constituent minerals are usually fine grained having wide range of chemical composition and often the elements of interest occur as trace elements not amenable to electron microprobe analysis. PIXE with a proton microprobe can be an effective tool to study such deposits by delineating the distribution of trace elements among carrier minerals. Two representative indium-bearing deposits of tin- polymetallic type, Tosham of India (Cu-ln-Bi-Sn-W-Ag), and Mount Pleasant of Canada (Zn-Cu-In-Bi-Sn-W), were studied to delineate the distribution of medical/high-tech rare metals and to examine the effectiveness of the proton probe analysis of such ore. One of the results of the study indicated that indium and bismuth are present in chalcopyrite in the deposits. In addition to these important rare metals, zinc, copper, arsenic, antimony, selenium, and tin are common in chalcopyrite and pyrite. Arsenopyrite contains nickel, copper, zinc, silver, tin, antimony and bismuth. In chalcopyrite and pyrite, zinc, arsenic, indium, bismuth and lead are richer in Mount Pleasant ore, but silver is higher at Tosham. Also thallium and gold were found only in Tosham pyrite. The Tosham deposit is related to S-type granite, while Mount Pleasant to A-type. It appears that petrographic character of the source magma is one of the factors to determine the trace element distribution in tin-polymetallic deposit. 6 refs., 2 figs.

  15. Proton microprobe study of tin-polymetallic deposits

    International Nuclear Information System (INIS)

    Murao, S.; Sie, S.H.; Suter, G.F.

    1996-01-01

    Tin-polymetallic vein type deposits are a complex mixture of cassiterite and sulfides and they are the main source of technologically important rare metals such as indium and bismuth. Constituent minerals are usually fine grained having wide range of chemical composition and often the elements of interest occur as trace elements not amenable to electron microprobe analysis. PIXE with a proton microprobe can be an effective tool to study such deposits by delineating the distribution of trace elements among carrier minerals. Two representative indium-bearing deposits of tin- polymetallic type, Tosham of India (Cu-ln-Bi-Sn-W-Ag), and Mount Pleasant of Canada (Zn-Cu-In-Bi-Sn-W), were studied to delineate the distribution of medical/high-tech rare metals and to examine the effectiveness of the proton probe analysis of such ore. One of the results of the study indicated that indium and bismuth are present in chalcopyrite in the deposits. In addition to these important rare metals, zinc, copper, arsenic, antimony, selenium, and tin are common in chalcopyrite and pyrite. Arsenopyrite contains nickel, copper, zinc, silver, tin, antimony and bismuth. In chalcopyrite and pyrite, zinc, arsenic, indium, bismuth and lead are richer in Mount Pleasant ore, but silver is higher at Tosham. Also thallium and gold were found only in Tosham pyrite. The Tosham deposit is related to S-type granite, while Mount Pleasant to A-type. It appears that petrographic character of the source magma is one of the factors to determine the trace element distribution in tin-polymetallic deposit. 6 refs., 2 figs

  16. Aspects of nitrogen surface chemistry relevant to TiN chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Schulberg, M.T.; Allendorf, M.D.; Outka, D.A.

    1996-08-01

    NH{sub 3} is an important component of many chemical vapor deposition (CVD) processes for TiN films, which are used for diffusion barriers and other applications in microelectronic circuits. In this study, the interaction of NH{sub 3} with TiN surfaces is examined with temperature programmed desorption (TPD) and Auger electron spectroscopy. NH{sub 3} has two adsorption states on TiN: a chemisorbed state and a multilayer state. A new method for analyzing TPD spectra in systems with slow pumping speeds yields activation energies for desorption for the two states of 24 kcal/mol and 7.3 kcal/mol, respectively. The sticking probability into the chemisorption state is {approximately}0.06. These results are discussed in the context of TiN CVD. In addition, the high temperature stability of TiN is investigated. TiN decomposes to its elements only after heating to 1300 K, showing that decomposition is unlikely to occur under CVD conditions.

  17. Geochemistry of the Panasqueira tungsten-tin deposit, Portugal

    NARCIS (Netherlands)

    Bussink, R.W.

    1984-01-01

    Major tin-tungsten deposits in Portugal are related to intrusions of the Younger Series (300-280 Ma) of Hercynian granitoids. Mineralized granites are 'specialized' by a specific increase or decrease of major, minor and trace element contents in comparison with non-mineralized occurrences.

  18. Geochemistry of the Panasqueira tungsten-tin deposit, Portugal

    NARCIS (Netherlands)

    Bussink, R.W.

    1984-01-01

    Major tin-tungsten deposits in Portugal are related to intrusions of the Younger Series (300-280 Ma) of Hercynian granitoids. Mineralized granites are 'specialized' by a specific increase or decrease of major, minor and trace element contents in comparison with non-mineralized occurrences. Component

  19. Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

    1998-11-27

    Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

  20. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  1. Nondestructive measurement of the residual stress TiN thin film coated on AISI 304 substrate by x-ray stress analyzer

    Science.gov (United States)

    Zhang, Y. K.; Feng, A. X.; Lu, J. Z.; Kong, D. J.; Tang, C. P.

    2006-01-01

    Titanium nitride films are deposited on AISI 304 steel with a hollow-cathode-discharge (HCD) ion-plating technique. The status of residual stresses in TiN thin film coated on AISI304 substrate by HCD is studied by x-ray diffraction stress analyzer. By analyzing morphology of the residual stress of TiN thin film at interface between TiN film and AISI 304 substrate, the adhering mechanism of TiN thin film is understood as follows: the mechanical interlocking had important contribution to the adhesion strength, the thermal stress is the major factor which resulting TiN thin film peeling off spontaneously. The results show that the value of thin film is -210MPa~-650Mpa, and the thermal stress is compressive, the intrinsic stress is tensile, origins of the residual stress are primarily discussed.

  2. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    Science.gov (United States)

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  3. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    Energy Technology Data Exchange (ETDEWEB)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are

  4. Characteristic corrosion resistance of nanocrystalline TiN films prepared by high density plasma reactive magnetron sputtering.

    Science.gov (United States)

    Kim, J H; Kang, C G; Kim, Y T; Cheong, W S; Song, P K

    2013-07-01

    Nanocytalline TiN films were deposited on non-alkali glass and Al substrates by reactive DC magnetron sputtering (DCMS) with an electromagnetic field system (EMF). The microstructure and corrosion resistance of the TiN-coated Al substrates were estimated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical methods. All the TiN films shows that they have a (111) preferred orientation at room temperature. TiN films deposited on Al substrate using only DCMS 400 W showed a sheet resistance of 3.22 x 10-1 omega/symbol see texts (resistivity, 3.22 x 10-5 omegacm). On the other hand, a relatively low sheet resistance of 1.91 x 10-1 omega/symbol see text (1.91 x 10-5 omegacm) was obtained for the dense nanocrystalline TiN film deposited on Al substrate using DCMS 375 W+ EMF 25 W, indicating that the introduction of an EMF system enhanced the electrical properties of the TiN film. TiN films deposited on Al substrate at 400 degreesC had a (200) preferred orientation with the lowest sheet resistance of 1.28x10-1 omega/symbol see texts (1.28 x 10-5 omegacm) which was attributed to reduced nano size defects and an improvement of the crystallinity. Potentiostatic and Potentiodynamic tests with a TiN-coated Al showed good corrosion resistance (l/corr, = 2.03 microA/cm2, Ecorr = -348 mV) compared to the uncoated Al substrate (/corr = 4.45 microA/cm2, Ecorr = -650 mV). Furthermore, EMF system showed that corrosion resistance of the TiN film also was enhanced compared to DCMS only. For the TiN film deposited on Al substrate at 400 degreesC, corrosion current and potential was 0.63 micro/cm2 and -1.5 mV, respectively. This improved corrosion resistance of the TiN film could be attributed to the densification of the film caused by enhancement of nitrification with increasing high reactive nitrogen radicals.

  5. Investigation of hexadecanethiol self-assembled monolayers on cadmium tin oxide thin films

    International Nuclear Information System (INIS)

    Rhodes, Crissy L.; Brewer, Scott H.; Folmer, Jaap; Franzen, Stefan

    2008-01-01

    This study reports the use of variable angle reflectance Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy to investigate the formation of a 1-hexadecanethiol adlayer on cadmium tin oxide (CTO) thin film surfaces. These adlayers appear to be robust, ordered monolayers. The optical and electronic properties of CTO thin films chemically vapor deposited onto glass substrates were also investigated. The reflectance of the CTO films was dependent upon the incident angle of the impinging radiation and revealed a reflectance decrease indicative of a plasma frequency in the mid-IR using p-polarized radiation

  6. Deposition of low sheet resistance indium tin oxide directly onto functional small molecules

    KAUST Repository

    Franklin, Joseph B.

    2014-11-01

    © 2014 Elsevier B.V. All rights reserved. We outline a methodology for depositing tin-doped indium oxide (ITO) directly onto semiconducting organic small molecule films for use as a transparent conducting oxide top-electrode. ITO films were grown using pulsed laser deposition onto copper(II)phthalocyanine (CuPc):buckminsterfullerene (C60) coated substrates. The ITO was deposited at a substrate temperature of 150 °C over a wide range of background oxygen pressures (Pd) (0.67-10 Pa). Deposition at 0.67 ≤ Pd ≤ 4.7 Pa led to delamination of the organic films owing to damage induced by the high energy ablated particles, at intermediate 4.7 ≤ Pd < 6.7 Pa pressures macroscopic cracking is observed in the ITO. Increasing Pd further, ≥ 6.7 Pa, supports the deposition of continuous, polycrystalline and highly transparent ITO films without damage to the CuPc:C60. The free carrier concentration of ITO is strongly influenced by Pd; hence growth at > 6.7 Pa induces a significant decrease in conductivity; with a minimum sheet resistance (Rs) of 145 /□ achieved for 300 nm thick ITO films. To reduce the Rs a multi-pressure deposition was implemented, resulting in the formation of polycrystalline, highly transparent ITO with an Rs of - 20/□ whilst maintaining the inherent functionality and integrity of the small molecule substrate.

  7. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A

    2002-11-30

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrol onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  8. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A.

    2002-01-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  9. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Science.gov (United States)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J. P.; Hakam, A.; Ennaoui, A.

    2002-11-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM).

  10. The characterization of TiN thin films using optical reflectivity measurements

    International Nuclear Information System (INIS)

    Glew, M R L; Vollmer, A; Schroeder, S L M; Barber, Z H

    2002-01-01

    Thin films of TiN have been deposited by reactive magnetron sputter deposition in varying partial pressures of nitrogen. Reflectivity measurements have been carried out between 1.5 and 3.5 eV and a correlation made between the film properties and optical data. Resistivity measurements carried out at room temperature are shown to exhibit the same trends as those obtained from reflectivity experiments. X-ray absorption fine structure measurements, in both electron-yield and fluorescence-yield modes, have shown the films to be identical and stoichiometric to within ±5 at.%. The use of reflectivity spectra to form the basis of a characterization tool for physical vapour deposited thin films is discussed

  11. Effect of microstructure of TiN film on properties as bipolar plate coatings in polymer electrolyte membrane fuel cell prepared by inductively coupled plasma assisted magnetron sputtering

    International Nuclear Information System (INIS)

    Feng, Kai; Li, Zhuguo

    2013-01-01

    As potential application in bipolar plate of polymer electrolyte membrane fuel cell, the microstructure, corrosion resistance and the electrical conductivity of titanium nitride (TiN) and Si doped titanium nitride (Ti 0.9 Si 0.1 N) films deposited by magnetron sputtering with different bias voltages are investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), electrochemical test and four-point probe method, respectively. XRD, SEM and AFM results reveal that the texture and topography of TiN film depend on the bias voltage and incorporation of Si. When the bias voltage is − 20 V and − 30 V, the TiN and Ti 0.9 Si 0.1 N films exhibit a dense (111) plane preferred growth, denser structure and smoother surface topography. The potentiodynamic test results indicate that the TiN and Ti 0.9 Si 0.1 N films have higher chemical inertness and better corrosion resistance. The films can satisfy the requirement of current density for bipolar plate materials. Incorporation of Si element into TiN film makes the passive current density more stable. Four-point probe measurement results show that the resistivity of both TiN and Ti 0.9 Si 0.1 N films reaches minimum when the deposition bias voltage is − 20 V. - Highlights: • Dense TiN and Ti 0.9 Si 0.1 N films are deposited by magnetron sputtering. • Preferred growth orientation of TiN depends on the bias voltage and Si doping. • TiN and Ti 0.9 Si 0.1 N films have excellent corrosion resistance. • Surface conductivity of TiN and Ti 0.9 Si 0.1 N films evolves with bias voltage

  12. An economic CVD technique for pure SnO2 thin films deposition ...

    Indian Academy of Sciences (India)

    sis of the hydrolysis reaction between tin tetrachloride and water vapour showed that the rate of deposition of SnO2 is a strong function of the temperature and the ratio of the reactants. Later, in the year 1990, undoped tin oxide films have been prepared by a chemical vapour deposition tech- nique by Sanon et al (1990).

  13. Combined TiN- and TaN temperature compensated thin film resistors

    International Nuclear Information System (INIS)

    Malmros, Anna; Andersson, Kristoffer; Rorsman, Niklas

    2012-01-01

    The opposite signs of the temperature coefficient of resistance (TCR) of two thin film materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature compensated thin film resistors (TFRs). The principle of designing temperature compensated TFRs by connecting TFRs of each compound in series or in parallel was demonstrated. TiN, TaN, and combined TiN and TaN TFRs for monolithic microwave integrated circuits (MMICs) were fabricated by reactive sputtering. DC characterization was performed over the temperature range of 30–200 °C. The TiN TFRs exhibited an increase in resistivity with temperature with TCRs of 540 and 750 ppm/°C. The TaN TFR on the other hand exhibited a negative TCR of − 470 ppm/°C. The shunted TFRs were fabricated by serial deposition of TiN and TaN to form a bilayer component. The TCRs of the series- and shunt configurations were experimentally reduced to − 60 and 100 ppm/°C, respectively. The concept of temperature compensation was used to build a Wheatstone bridge with an application in on-chip temperature sensing.

  14. Combined TiN- and TaN temperature compensated thin film resistors

    Energy Technology Data Exchange (ETDEWEB)

    Malmros, Anna, E-mail: anna.malmros@chalmers.se; Andersson, Kristoffer; Rorsman, Niklas

    2012-01-01

    The opposite signs of the temperature coefficient of resistance (TCR) of two thin film materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature compensated thin film resistors (TFRs). The principle of designing temperature compensated TFRs by connecting TFRs of each compound in series or in parallel was demonstrated. TiN, TaN, and combined TiN and TaN TFRs for monolithic microwave integrated circuits (MMICs) were fabricated by reactive sputtering. DC characterization was performed over the temperature range of 30-200 Degree-Sign C. The TiN TFRs exhibited an increase in resistivity with temperature with TCRs of 540 and 750 ppm/ Degree-Sign C. The TaN TFR on the other hand exhibited a negative TCR of - 470 ppm/ Degree-Sign C. The shunted TFRs were fabricated by serial deposition of TiN and TaN to form a bilayer component. The TCRs of the series- and shunt configurations were experimentally reduced to - 60 and 100 ppm/ Degree-Sign C, respectively. The concept of temperature compensation was used to build a Wheatstone bridge with an application in on-chip temperature sensing.

  15. Controlled Deposition of Tin Oxide and Silver Nanoparticles Using Microcontact Printing

    Directory of Open Access Journals (Sweden)

    Joo C. Chan

    2015-02-01

    Full Text Available This report describes extensive studies of deposition processes involving tin oxide (SnOx nanoparticles on smooth glass surfaces. We demonstrate the use of smooth films of these nanoparticles as a platform for spatially-selective electroless deposition of silver by soft lithographic stamping. The edge and height roughness of the depositing metallic films are 100 nm and 20 nm, respectively, controlled by the intrinsic size of the nanoparticles. Mixtures of alcohols as capping agents provide further control over the size and shape of nanoparticles clusters. The distribution of cluster heights obtained by atomic force microscopy (AFM is modeled through a modified heterogeneous nucleation theory as well as Oswald ripening. The thermodynamic modeling of the wetting properties of nanoparticles aggregates provides insight into their mechanism of formation and how their properties might be further exploited in wide-ranging applications.

  16. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  17. Ovonic switching in tin selenide thin films. Ph.D. Thesis

    Science.gov (United States)

    Baxter, C. R.

    1974-01-01

    Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

  18. Investigation of the Carbon Monoxide Gas Sensing Characteristics of Tin Oxide Mixed Cerium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Muhammad B. Haider

    2012-02-01

    Full Text Available Thin films of tin oxide mixed cerium oxide were grown on unheated substrates by physical vapor deposition. The films were annealed in air at 500 °C for two hours, and were characterized using X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. X-ray photoelectron spectroscopy and atomic force microscopy results reveal that the films were highly porous and porosity of our films was found to be in the range of 11.6–21.7%. The films were investigated for the detection of carbon monoxide, and were found to be highly sensitive. We found that 430 °C was the optimum operating temperature for sensing CO gas at concentrations as low as 5 ppm. Our sensors exhibited fast response and recovery times of 26 s and 30 s, respectively.

  19. Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jaewon; Hwang, Cheol Seong; Park, Sung Jin; Yoon, Neung Ku [Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Sorona Inc., Pyeongtaek, Gyeonggi 451-841 (Korea, Republic of)

    2009-07-15

    Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The films were deposited on SiO{sub 2}/Si wafer and glass (Eagle 2000) substrates at a substrate temperature of 100 degree sign C with a Cs vapor flow during the deposition process. The ITO thin films deposited in the presence of Cs vapor showed better crystallinity than the control films grown under normal Ar/O{sub 2} plasma conditions. The resistivity of the films with the Cs assistance was lower than that of the control films. The lowest resistivity of 6.2x10{sup -4} {Omega} cm, which is {approx}20% lower than that of the control sample, was obtained without any postdeposition thermal annealing. The surface roughness increased slightly when Cs vapor was added. The optical transmittance was >80% at wavelengths ranging from 380 to 700 nm.

  20. Numerical studies on PACVD processes used for TiN multifunctional films using metal organic precursors

    Science.gov (United States)

    Son, Seok-Jae; Yi, Kyung-Woo; Joo, Jung-Hoon; Mahrholz, J.; Rie, K.-T.

    2008-04-01

    In this study, we performed a numerical simulation of the low-temperature thin-film growth of TiN layers in a plasma-assisted MOCVD reaction chamber for the purpose of eventual scale-up. Tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT) is commonly employed as a precursor for TiN layers to avoid chlorine contamination on the substrate. A reaction mechanism of TiN layer formation from TDMAT/TDEAT under the plasma-activated condition suggested by the mass spectrum analysis is employed for numerical calculations. This study is expected to make significant contributions to the understanding of the plasma-activated TiN reaction pathways, which are not yet clearly understood. The deposition rate is dependent on the process parameters such as the flow rate, pressure and plasma power, as well as the concentration gradient near the substrate. In this study, the multiple parameters described above are examined through numerical analysis to determine the deposition rate as well as to provide optimal processing conditions.

  1. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    OpenAIRE

    Ganesh E. Patil; D. D. Kajale; D. N. Chavan; N. K. Pawar; V. B. Gaikwad; G. H. Jain

    2010-01-01

    Polycrystalline tin oxide (SnO2) thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT). The film was characterized for their phase and morphology by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2), liquefied petroleum gas (LPG), ethanol vapors (C2H5OH), NH3, CO, CO2, Cl2 an...

  2. Electrical and optical properties of thin indium tin oxide films produced by pulsed laser ablation in oxygen or rare gas atmospheres

    DEFF Research Database (Denmark)

    Thestrup, B.; Schou, Jørgen; Nordskov, A.

    1999-01-01

    Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate temperatu......Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate...... temperatures at 200 degrees C, the specific resistivity was reduced and the transmission of visible light enhanced for all background gases. Films produced in oxygen turned out to be superior to films deposited in other gases at the same temperature. (C) 1999 Elsevier Science B.V. All rights reserved....

  3. Stress-Strain Analysis in TiN Nanocoating Deposited on Polymer with respect to Au Nanointerlayer

    Directory of Open Access Journals (Sweden)

    Magdalena Kopernik

    2014-01-01

    Full Text Available The multiscale analysis in the authors’ finite element code confirmed possibility of fracture, because of not sufficiently high level of compressive residual stress in the TiN deposited by physical deposition method and varied mechanical properties of the thin film and substrate. The residual stress cannot be identified by X-ray technique for amorphous polymer and layer with domains of crystalline TiN. It is assumed that the buffer biocompatible thin film of Au in the TiN/Bionate II material system will alter the evolution of residual stress and, therefore, will allow to determine the residual stress in profilometry studies, and helps to improve toughness of the connection between TiN and Bionate II. The introduction of Au nanocoating in the material system results in bending of the sample and a compressive residual stress in the TiN coating. Results of finite element simulation show improvement of connection between the polymer and TiN, and an increase of compressive residual stress in the coating by introduction of Au nanointerlayer results in reduction of stress and strain in the substrate (close to the boundary between substrate and coating.

  4. Photoinduced conductivity in tin dioxide thin films

    International Nuclear Information System (INIS)

    Muraoka, Y.; Takubo, N.; Hiroi, Z.

    2009-01-01

    The effects of ultraviolet light irradiation on the conducting properties of SnO 2-x thin films grown epitaxially on TiO 2 or Al 2 O 3 single-crystal substrates are studied at room temperature. A large increase in conductivity by two to four orders of magnitude is observed with light irradiation in an inert atmosphere and remains after the light is removed. The high-conducting state reverts to the original low-conducting state by exposing it to oxygen gas. These reversible phenomena are ascribed to the desorption and adsorption of negatively charged oxygen species at the grain boundaries, which critically change the mobility of electron carriers already present inside grains by changing the potential barrier height at the grain boundary. The UV light irradiation provides us with an easy and useful route to achieve a high-conducting state even at low carrier density in transparent conducting oxides and also to draw an invisible conducting wire or a specific pattern on an insulating film.

  5. Study of the functional properties of ITO grown by metalorganic chemical vapor deposition from different indium and tin precursors

    International Nuclear Information System (INIS)

    Szkutnik, P.D.; Roussel, H.; Lahootun, V.; Mescot, X.; Weiss, F.; Jiménez, C.

    2014-01-01

    Highlights: • Study of ITO layers obtained from three indium and two tin precursors by pulsed MOCVD. • Optimized tin doping depends on the tin chemical precursor. • Combination including acetyl acetonate ligand present the same characteristics. • Films elaborated between 350 and 700 °C with InMe2OtBu present a constant resistivity. - Abstract: Functional properties of tin doped indium oxide (ITO) layers grown by MOCVD from different indium and tin precursors are investigated. Selected indium precursors are In(acac) 3 , In(tmhd) 3 and InMe 2 O t Bu, and tin precursors are DBTDA and Sn(acac) 2 . ITO layers are optically and electrically characterized to determine the better doping conditions. Differences in electrical properties of ITO layers are found when using InMe 2 O t Bu, as compared to In(acac) 3 and to In(tmhd) 3 . The best films present a resistivity of 2.5 × 10 −4 Ω cm and a transmittance higher than 84% for high deposition temperatures (T ⩾ 600 °C). The nature of tin precursors modifies the optimal doping at which these characteristics are achieved. When doped by DBTDA optimal doping is 8 at.%, therefore close to the solubility limit of tin in In 2 O 3 matrix; but when using Sn(acac) 2 , or In(acac) 3 /DBTDA combination, best functional characteristics are obtained for the maximal doping content obtained, i.e. 2.5 at.%. For optimized conditions, the resistivity decreases when deposition temperature increases except when using the couple InMe 2 O t Bu/DBTDA without oxygen addition during deposition. For this combination of precursors a resistivity of 1 × 10 −3 Ω cm is obtained at a deposition temperature of 350 °C and remains constant up to 600 °C. Only the films obtained from InMe 2 O t Bu/DBTDA are crystalline state at a deposition temperature of 350 °C

  6. Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.co [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India); Muruganantham, G.; Sakthivel, B. [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

    2009-11-15

    Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO{sub 2}:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl{sub 2} precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08x10{sup 14} lines/m{sup 2}) when compared with that of the undoped film (13.2x10{sup 14} lines/m{sup 2}), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 OMEGA/square) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl{sub 2} precursor (without using methanol or ethanol).

  7. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

    Science.gov (United States)

    Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

    2015-09-21

    : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  8. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    Science.gov (United States)

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  9. Electrochromic properties of InN:Sn films deposited by reactive evaporation

    International Nuclear Information System (INIS)

    Inoue, Y.; Takeuchi, H.; Ishikawa, H.; Takai, O.

    2009-01-01

    Indium-tin nitride (InN:Sn) films were deposited by vacuum evaporation assisted by active nitrogen irradiation. A glancing-angle deposition scheme was applied to form isolated nanocolumnar structures in order to expand surface area of the films. X-ray diffraction analysis revealed that the films consisted of crystallites of InN:Sn in a wurtzite structure and amorphous InN:Sn matrix. The doped tin atoms did not work as donor in the InN:Sn films but electrons-trapping sites. The electrochromic amplitude was reduced with increase in tin composition. Despite that the tin doping caused the decrease in carrier density, the color-change region of the InN:Sn films shifted slightly toward shorter wavelength.

  10. Effect of Nitrogen Content on Physical and Chemical Properties of TiN Thin Films Prepared by DC Magnetron Sputtering with Supported Discharge

    Science.gov (United States)

    Kavitha, A.; Kannan, R.; Gunasekhar, K. R.; Rajashabala, S.

    2017-10-01

    Amorphous titanium nitride (TiN) thin films have been prepared on silicon (Si) and glass substrates by direct-current (DC) reactive magnetron sputtering with a supported discharge (triode). Nitrogen gas (N2) at partial pressure of 0.3 Pa, 0.4 Pa, 0.5 Pa, and 0.6 Pa was used to prepare the TiN thin films, maintaining total pressure of argon and N2 of about 0.7 Pa. The chemical, microstructural, optical, and electrical properties of the TiN thin films were systematically studied. Presence of different phases of Ti with nitrogen (N), oxygen (O2), and carbon (C) elements was revealed by x-ray photoelectron spectroscopy characterization. Increase in the nitrogen pressure from 0.3 Pa to 0.6 Pa reduced the optical bandgap of the TiN thin film from 2.9 eV to 2.7 eV. Photoluminescence study showed that TiN thin film deposited at N2 partial pressure of 0.3 Pa exhibited three shoulder peaks at 330 nm, 335 nm, and 340 nm, which disappeared when the sample was deposited with N2 partial pressure of 0.6 Pa. Increase in the nitrogen content decreased the electrical resistivity of the TiN thin film from 3200 μΩ cm to 1800 μΩ cm. Atomic force microscopy studies of the TiN thin films deposited with N2 partial pressure of 0.6 Pa showed a uniform surface pattern associated with accumulation of fine grains. The results and advantages of this method of preparing TiN thin films are also reported.

  11. Deposition and characterization of ITO films produced by laser ablation at 355 nm

    DEFF Research Database (Denmark)

    Holmelund, E.; Thestrup Nielsen, Birgitte; Schou, Jørgen

    2002-01-01

    Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence...

  12. Study of quartz crystal microbalance NO2 sensor coated with sputtered indium tin oxide film

    International Nuclear Information System (INIS)

    Georgieva, V; Gadjanova, V; Angelov, Ts; Aleksandrova, M; Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" data-affiliation=" (Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" >Stefanov, P; Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" data-affiliation=" (Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" >Dilova, T; Grechnikov, A

    2014-01-01

    A study of NO 2 gas sorption ability of thin indium tin oxide (ITO) deposited on 16 MHz quartz crystal microbalance (QCM) is presented. ITO films are grown by RF sputtering of indium/tin target with weight proportion 95:5 in oxygen environment. The ITO films have been characterized by X-ray photoelectron spectroscopy measurements. The ITO surface composition in atomic % is defined to be: In-40.6%, Sn-4.3% and O-55%. The thickness and refractive index of the films are determined by ellipsometric method. The frequency shift of QCM-ITO is measured at different NO 2 concentrations. The QCM-ITO system becomes sensitive at NO 2 concentration ≥ 500 ppm. The sorbed mass for each concentration is calculated according the Sauerbrey equation. The results indicated that the 1.09 ng of the gas is sorbed into 150 nm thick ITO film at 500 ppm NO 2 concentration. When the NO 2 concentration increases 10 times the calculated loaded mass is 5.46 ng. The sorption process of the gas molecules is defined as reversible. The velocity of sorbtion /desorption processes are studied, too. The QCM coated with thin ITO films can be successfully used as gas sensors for detecting NO 2 in the air at room temperature

  13. Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Jaiswal, Manoj Kumar [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Kumar, Rajesh, E-mail: rajeshkumaripu@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India)

    2013-11-01

    Thin films of tin(IV) oxide (SnO{sub 2}) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au{sup 8+} using 1 pnA current at normal incidence with ion fluences varying from 1 × 10{sup 11} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV–Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm{sup −1} in FTIR spectrum confirmed the O–Sn–O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO{sub 2} were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

  14. Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

    Science.gov (United States)

    Jaiswal, Manoj Kumar; Kanjilal, D.; Kumar, Rajesh

    2013-11-01

    Thin films of tin(IV) oxide (SnO2) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au8+ using 1 pnA current at normal incidence with ion fluences varying from 1 × 1011 ions/cm2 to 5 × 1013 ions/cm2. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV-Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm-1 in FTIR spectrum confirmed the O-Sn-O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO2 were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

  15. Tuning the properties of tin oxide thin films for device fabrications

    Science.gov (United States)

    Sudha, A.; Sharma, S. L.; Gupta, A. N.; Sharma, S. D.

    2017-11-01

    Tin oxide thin films were deposited on well cleaned glass substrates by thermal evaporation in vacuum and were annealed at 500 ∘C in the open atmosphere inside a furnace for 90 min for promoting the sensitivity of the films. The X-ray diffraction studies revealed that the as-deposited films were amorphous in nature and the annealed films showed appreciable crystalline behavior. The annealed thin films were then irradiated using 60Co gamma source. The radiation induced changes were then studied by X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy and I- V characterization. The remarkable increase in the average grain size, the decrement in the energy band gap and resistivity due to the gamma irradiations up to a certain dose and the reversal of these properties at higher doses are the important observations. The large changes in the conductivity and energy band gap of the annealed thin films due to gamma irradiation make these films quite important device material for the fabrication of gamma sensors and dosimeters.

  16. Laser deposition of HTSC films

    International Nuclear Information System (INIS)

    Sobol', Eh.N.; Bagratashvili, V.N.; Zherikhin, A.N.; Sviridov, A.P.

    1990-01-01

    Studies of the high-temperature superconducting (HTSC) films fabrication by the laser deposition are reviewed. Physical and chemical processes taking place during laser deposition are considered, such as the target evaporation, the material transport from the target to the substrate, the film growth on the substrate, thermochemical reactions and mass transfer within the HTSC films and their stability. The experimental results on the laser deposition of different HTSC ceramics and their properties investigations are given. The major technological issues are discussed including the deposition schemes, the oxygen supply, the target compositions and structure, the substrates and interface layers selection, the deposition regimes and their impact on the HTSC films properties. 169 refs.; 6 figs.; 2 tabs

  17. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  18. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Marsal, A. [Dept Enginyeria Electronica and Center of Research in Nanoengineering, Universitat Politècnica Catalunya, Barcelona (Spain); Carreras, P. [Dept Física Aplicada i Òptica, Universitat de Barcelona, Barcelona (Spain); Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R. [Dept Enginyeria Electronica and Center of Research in Nanoengineering, Universitat Politècnica Catalunya, Barcelona (Spain); Bertomeu, J. [Dept Física Aplicada i Òptica, Universitat de Barcelona, Barcelona (Spain); Antony, A. [Dept Física Aplicada i Òptica, Universitat de Barcelona, Barcelona (Spain); Indian Institute of Technology, Bombay (India)

    2014-03-31

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band.

  19. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

    2007-01-01

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

  20. Highly stable amorphous zinc tin oxynitride thin film transistors under positive bias stress

    Science.gov (United States)

    Niang, K. M.; Bayer, B. C.; Meyer, J. C.; Flewitt, A. J.

    2017-09-01

    The stability of amorphous zinc tin oxynitride thin film transistors (a-ZTON TFTs) under positive bias stress (PBS) is investigated. Thin films are deposited by remote plasma reactive sputtering and are annealed at 300 °C in air for 1 h, after which films are confirmed to be highly amorphous by transmission electron microscopy. Typical a-ZTON TFTs exhibit a threshold voltage of 2.5 V, a field effect mobility of 3.3 cm2 V-1 s-1, a sub-threshold slope of 0.55 V dec-1, and a switching ratio over 106. Using a thermalization energy analysis, the threshold voltage shift under PBS is analysed. A maximum energy barrier to defect conversion up to 0.91 eV is found, which is significantly greater than that of the ˜0.75 eV energy barrier for amorphous indium gallium zinc oxide and amorphous zinc tin oxide TFTs previously reported. The improved stability of these oxynitride TFTs over amorphous oxide TFTs is explained by the elimination of less stable oxygen vacancies due to the passivation of oxygen vacancies with nitrogen. The higher attempt-to-escape frequency of 108 to 109 s-1 in a-ZTON TFTs compared with 107 s-1 in amorphous oxide semiconductor TFTs, on the other hand, is attributed to the high homogeneity of the amorphous film leading to strong carrier localization in the band tails.

  1. Study of optical characteristics of tin oxide thin film prepared by sol ...

    Indian Academy of Sciences (India)

    Abstract. In this paper, we present details of preparation of tin oxide (SnO2) thin film by sol–gel process. The film was synthesized on a glass (Corning 7059) plate by dip coating method. Here, we used tin (II) chloride as precursor and methanol as solvent. Optical characteristics and physical properties like refractive index, ...

  2. Effects of hot isostatic pressure on titanium nitride films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Carbonari M.J.

    2001-01-01

    Full Text Available Films of titanium nitride deposited by physical vapor deposition on 304 L stainless steel substrates were hot isostatic pressed (HIP under 150 MPa at 550 °C. To study the effects of this treatment on the microstructure of those films, X-ray diffraction analyses, Rutherford Backscattering spectroscopy, scanning electron microscopy, and atomic force microscopy were performed. Surface hardness, and roughness were also evaluated to characterize the TiN properties. The hot isostatic pressure leads to an increase of hardness for depths up to 0.1 mum and a crystallographic texture change from (111 to (200. The original TiN golden color turned to red after the treatment. An increase of the grain size has been observed for hot isostatic pressed samples, but the stoichiometry of the TiN film was determined to be 1:1 by RBS. The microstructure observed by atomic force microscopy indicated that the TiN film surface is smoother after the HIP treatment.

  3. Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

    2014-01-01

    Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

  4. An experimental study on the characteristics and delamination of TiN coatings deposited on Al 7075-T6 under fatigue cycling

    International Nuclear Information System (INIS)

    Oskouei, R.H.; Ibrahim, R.N.; Barati, M.R.

    2012-01-01

    In this paper, delamination of a titanium nitride (TiN) thin film from an aluminium alloy 7075-T6 substrate has been studied under fatigue loading conditions. TiN coatings of 3 μm in thickness were deposited onto the aluminium substrate using a physical vapour deposition process. Fatigue fracture surfaces of the coated specimens, failed under a range of low to high cyclic loads, were examined by means of scanning electron microscopy (SEM). SEM analyses showed that the coating layer remained well-adhered to the substrate under fatigue loading with maximum stresses less than 200 MPa. However, local delaminations were observed at maximum cyclic stresses higher than 200 MPa. The coated specimens were found to beneficially resist maximum cyclic stresses up to 350 MPa without showing delaminations when subjected to a modified post heat treatment with a high solutionising temperature. This was associated with an average improvement of 27% in the fatigue life of the coated specimens subjected to the post heat treatment in a controlled atmosphere (argon) when compared to uncoated Al 7075-T6 for tested maximum alternating stress levels. Characterisation of TiN coatings confirmed the presence of single phase TiN film onto the substrate without any oxidisation when heat treated in argon atmosphere. Moreover, compressive residual stresses in TiN coatings increased from − 4.54 to − 7.56 GPa after the post heat treatment as a result of thermal stresses introduced during the quenching stage of the heat treatment. The actual lattice parameters were determined using the Cohen–Wagner method and were found to increase from 4.257 (Å) for the as-deposited TiN coatings to 4.262 (Å) for TiN coatings subjected to the post heat treatment. - Highlights: ► Improvement in fatigue life of TiN coated Al 7075-T6 after a post heat treatment ► Excellent adhesion of TiN film to the substrate at low and moderate cyclic loads ► Local delaminations of TiN film from Al 7075-T6 substrate

  5. Residual stress in coated low-Z films of TiC and TiN. Pt. 2

    International Nuclear Information System (INIS)

    Yoshizawa, I.; Kabeya, Z.; Kamada, K.

    1984-01-01

    The correlations of the residual stresses with microstructures of TiC and TiN films deposited onto various substrates were examined by means of observations of SEM micrographs, X-ray back-reflected Debye rangs and diffraction line profile of X-ray spectrometer chart. It was found that specimens with lower residual stress generally show sharp line profile and good separation between Ksub(α1) and Ksub(α2) diffraction peaks in both TiN and TiC films, indicating better crystalline perfection. PVD coated TiC films on Mo and Inconel substrates show poor separation of Ksub(α1) and Ksub(α2) peaks, namely due to higher residual stresses in comparison with those of CVD coated TiN and TiC films on Mo or Inconel substrate. In CVD TiC/Pocographite system, with film thickness ranging from 10 to 100 μm, the grain size increase with increasing the thickness, except 100 μm thick specimen which has the smallest grain size in this group. However, the sharpness of diffraction profile is best in 20 μm thick film, and worst in 100 μm thick film. This is in good correlation with the amount of residual stress. (orig.)

  6. The electrochemical deposition of tin-nickel alloys and the corrosion properties of the coating

    DEFF Research Database (Denmark)

    Jellesen, Morten Stendahl; Møller, Per

    2005-01-01

    The electrodeposition of tin/nickel (65/35 wt%) is a unique coating process because of the deposition of an intermetallic phase of nickel and tin, which cannot be formed by any pyrometallurgical process. From thermodynamic calculations it can be shown that intermetallic phases can be formed throu...

  7. Adhesion of laser deposited films

    International Nuclear Information System (INIS)

    Zhovannik, E.V.; Nikolaev, I.N.; Utochkin, Yu.A.; Stavkin, D.G.

    1996-01-01

    The method of thin solid films (Ni, Cu, Al, Pd, Si, InSb, Ta 2 O 5 ) formation on different substrates (Cu, Fe, Si, SiO 2 , Ta 2 O 5 , carbon, glass, mica, teflon) with higher adhesion strength (∼ 10 7 Pa) without preliminary treatment of substrate surface was discribed. The method is based on laser evaporation of solid in vacuum. Adhesion was measured by means of a direct pull technique using a pin soldered to buffer film evaporated by laser on the investigated film. Possible reasons for higher adhesion of films fabricated by laser deposition were discussed. 10 refs.; 3 figs

  8. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel

    2014-11-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show that the new model is suitable for cyclic loading. After calibration with experimental data, we are able to capture the stress-strain behavior and changes in electrical resistance of ITO thin films. We are also able to predict the crack density using calibrations from our previous model. Finally, we demonstrate the capabilities of our model based on simulations using material properties reported in the literature. Our model is implemented in the commercially available finite element software ABAQUS using a user subroutine UMAT.[Figure not available: see fulltext.].

  9. Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Liviu Duta

    2016-01-01

    Full Text Available We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS, X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility.

  10. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Ali, N., E-mail: nisar.ali@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Department of Physics, Govt. Post Graduate Jehanzeb College Saidu Sharif, Swat, 19200 (Pakistan); Hussain, A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Wan Shamsuri, W.N. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Fu, Y.Q., E-mail: richard.fu@northumbria.ac.uk [Department of Physics and Electrical Engineering, Faculty of Engineering & Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST (United Kingdom)

    2016-12-30

    Highlights: • A new and novel material for solar cell applications is demonstrated as a replacement for toxic and expansive compounds. • The materials used in this compound are abundant and low cost. • Compound exhibit unusual optical and electrical properties. • The band gap was found to be comparable with that of GaAs. - Abstract: Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs – one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  11. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  12. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

    International Nuclear Information System (INIS)

    Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

    2006-01-01

    A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

  13. Growth mode and texture development in TiN films during magnetron sputtering - An in situ synchrotron radiation study

    CERN Document Server

    Schell, N; Matz, W; Chevallier, J

    2003-01-01

    For the materials research experimental station of the Rossendorf beamline ROBL at the European Synchrotron Radiation Facility in Grenoble, France, a two magnetron sputter deposition chamber for in situ study of film growth by synchrotron X-ray diffraction and reflectivity was developed. It allows high-quality depositions of compound films and multilayers. Heteroepitaxial layer-by-layer growth of TiN on single crystal MgO(0 0 1) was observed by real-time specular X-ray reflectivity showing characteristic oscillations. The pseudomorphic growth was confirmed by high-resolution TEM micrographs. During growth on amorphous SiO sub 2 on Si(0 0 1) substrates, the microstructural development of TiN films was studied in situ as a function of film thickness. With the deposition parameters chosen, a crossover was observed: grains with a (0 0 2) plane parallel to the film surface dominate at small thicknesses, while, at larger thicknesses, (1 1 1) grains dominate. Recrystallisation was identified as a mechanism that cont...

  14. Characterization and comparison of TiN layers deposited by different physical vapour deposition processes

    Energy Technology Data Exchange (ETDEWEB)

    Benmalek, M.; Gimenez, P. (Pechiney CRV SA, 38 - Voreppe (France)); Peyre, J.P.; Tournier, C. (CETIM, 60 - Senlis (France))

    1991-11-29

    Characterization of titanium nitride films prepared by the main physical vapour deposition processes, including ion plating, arc deposition and sputtering, was undertaken. Samples supplied by different coating manufacturers were submitted to comparative investigations using scanning electron microscopy observations, X-ray diffraction, microhardness and friction measurements. Before deposition, tool steel samples were heat treated and surface polished under identical conditions. Differences exhibited by the films in morphology, structure, hardness, adhesion and friction were related either to those existing betweeing deposition mechanisms or to the parameters of the processes. In study of the friction behaviour of an aluminium alloy-titanium nitride couple in dry conditions, the magnetron-sputtered film was found to present the best result. (orig.).

  15. In-situ laser processing and microstructural characteristics of YBa2Cu3O7-δ thin films on Si with TiN buffer layer

    International Nuclear Information System (INIS)

    Tiwari, P.; Zheleva, T.; Narayan, J.

    1993-01-01

    The authors have prepared high-quality superconducting YBa 2 Cu 3 O 7 -δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excimer laser ( | = 248 nm ) at substrate temperature of 650 C . Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (S E M), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with TiN parallel Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90-92K with T co (zero resistance temperature) of 84K. The authors have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed in detail

  16. Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hägglund, Carl, E-mail: carl.hagglund@angstrom.uu.se [Department of Chemical Engineering, Stanford University, Stanford, California 94305 and Department of Engineering Sciences, Division of Solid State Electronics, Uppsala University, 75121 Uppsala (Sweden); Grehl, Thomas; Brongersma, Hidde H. [ION-TOF GmbH, Heisenbergstraße 15, 48149 Münster (Germany); Tanskanen, Jukka T.; Mullings, Marja N.; Mackus, Adriaan J. M.; MacIsaac, Callisto; Bent, Stacey Francine, E-mail: sbent@stanford.edu [Department of Chemical Engineering, Stanford University, Stanford, California 94305 (United States); Yee, Ye Sheng [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Clemens, Bruce M. [Department of Material Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-03-15

    A broad and expanding range of materials can be produced by atomic layer deposition at relatively low temperatures, including both oxides and metals. For many applications of interest, however, it is desirable to grow more tailored and complex materials such as semiconductors with a certain doping, mixed oxides, and metallic alloys. How well such mixed materials can be accomplished with atomic layer deposition requires knowledge of the conditions under which the resulting films will be mixed, solid solutions, or laminated. The growth and lamination of zinc oxide and tin oxide is studied here by means of the extremely surface sensitive technique of low energy ion scattering, combined with bulk composition and thickness determination, and x-ray diffraction. At the low temperatures used for deposition (150 °C), there is little evidence for atomic scale mixing even with the smallest possible bilayer period, and instead a morphology with small ZnO inclusions in a SnO{sub x} matrix is deduced. Postannealing of such laminates above 400 °C however produces a stable surface phase with a 30% increased density. From the surface stoichiometry, this is likely the inverted spinel of zinc stannate, Zn{sub 2}SnO{sub 4}. Annealing to 800 °C results in films containing crystalline Zn{sub 2}SnO{sub 4}, or multilayered films of crystalline ZnO, Zn{sub 2}SnO{sub 4}, and SnO{sub 2} phases, depending on the bilayer period.

  17. Mineralogy of the Santa Fe Tin deposit, Bolivia

    Science.gov (United States)

    Jiménez-Franco, Abigail; Alfonso, Pura; Canet, Carles; Garcia-Valles, Maite; Elvys Trujillo, Juan

    2014-05-01

    Santa Fe is a Sn-Zn-Pb-Ag ore deposit located in the Oruro district, Central Andean Tin Belt, Bolivia. Mineralization occurs in veins and disseminations. It is hosted in Silurian shales and greywackes. The sedimentary sequence is folded and unconformably covered by a volcanic complex of the Morococala Formation, mainly constituted by tuffs of Miocene age. A wide Nº40 shear zone and two systems of fracture are developed. A Nº40 fracture system, dipping 60ºW, which hosts Sn and Zn minerals, and other in the same direction but dipping 75ºE, which is related to Zn-Pb-Ag veins. The mineralization is associated to intrusive felsic magmatism. Although there are not intrusive rocks in Santa Fe, a dyke and the felsic San Pablo stock occur at a distance of about 10 km. In the present work we describe the geology and mineralogy of the Santa Fe deposit. X-ray diffraction, scanning electron microscopy and electron microprobe analyses were used to characterize the minerals. Veins are filled with quartz and an ore mineral assemblage of cassiterite, sulfides and sulfosalts. Cassiterite constitutes the earliest formed mineralization. Preliminar microprobe analyses indicate that it is nearly pure, with negligible contents in Nb and Ta. Rutile occurs as a late phase associated with a late generation of cassiterite. It forms thin neddle-like crystals. In addition, Sn is also present in sulfides as stannite, stannoidite and kësterite. Other sulfides are pyrrhotite, pyrite, arsenopyrite, galena, sphalerite, marchasite and argentite. Bismuthinite and berndite are found nin trace amounts. Sulfosalts include tetrahedrite, myarhyrite, boulangerite, jamesonite, franckeite, zinckenite, cilindrite and andorite. Associated with the mineralization, several phosphate minerals are found filling cavities and small fractures. The most abundant are monacite (Ce,La,Nd,Th)PO4 and plumbogummite (PbAl3(PO4)2(OH)5•(H2O)). Crandallite CaAl3(PO4)2(OH)5•(H2O) and vivianite (Fe3+(PO4)2•8(H2O)) also

  18. Chemical bath deposition of indium sulphide thin films: preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Ennaoui, A.; Patil, P.S.; Giersig, M.; Diesner, K.; Muller, M.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1999-02-26

    Indium sulphide (In{sub 2}S{sub 3}) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In{sub 2}S{sub 3} thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (element of phase). The optical band gap of In{sub 2}S{sub 3} thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis. (orig.) 27 refs.

  19. Uniaxial tensile and shear deformation tests of gold–tin eutectic solder film

    Directory of Open Access Journals (Sweden)

    Takahiro Namazu, Hideki Takemoto, Hiroshi Fujita and Shozo Inoue

    2007-01-01

    Full Text Available This paper describes a novel experimental technique for measuring mechanical properties of gold-tin (Au–Sn eutectic solder film used for soldering package in microelectromechanical systems (MEMS. Dual-source DC magnetron sputtering was employed to deposit Au-20 weight % (wt% Sn film. The tensile test with in situ X-ray diffraction (XRD measurement evaluates the Young's modulus and Poisson's ratio at intermediate temperatures. The Young's modulus and Poisson's ratio at room temperature were found to be 51.3 GPa and 0.288, lower than bulk values. The Young's modulus decreased with increasing temperature, whereas the Poisson's ratio did not depend on temperature. The XRD tensile test also showed creep deformation behavior of Au–Sn film. We have developed a shear deformation test technique, which is performed by using Au–Sn film sandwiched by two single crystal silicon (Si cantilever structures, to characterize the shear properties of the film. The shear moduli obtained from the shear deformation tests ranged from 11.5 to 13.3 GPa, about 38% lower than those from the XRD tensile tests. The measured shear strength from 12 to 17 MPa exhibited a temperature dependency. Information about the tensile and shear characteristics would likely to be of great use in designing Au–Sn soldering packages for MEMS.

  20. Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Graberg, Till von; Hartmann, Pascal; Rein, Alexander; Janek, Juergen; Smarsly, Bernd M [Institute of Physical Chemistry, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 58, D-35392 Giessen (Germany); Gross, Silvia [ISTM-CNR, Dipartimento di Scienze Chimiche, Universita' degli Studi di Padova, via Marzolo 1, 5131-Padova (Italy); Seelandt, Britta; Wark, Michael [Institut fuer Physikalische Chemie und Elektrochemie, Gottfried Wilhelm Leibniz Universitaet Hannover, Callinstrasse 3A, D-30167 Hannover (Germany); Roeger, Cornelia; Zieba, Roman; Traut, Alexander, E-mail: Bernd.Smarsly@phys.chemie.uni-giessen.de [BASF SE, D-67056 Ludwigshafen (Germany)

    2011-03-15

    We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO) thin films via dip-coating. Two poly(isobutylene)-b-poly(ethyleneoxide) (PIB-PEO) copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000) are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 deg. C; these coatings have a specific resistance of 0.5 {Omega} cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20-25 and 35-45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material.

  1. Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity

    Science.gov (United States)

    von Graberg, Till; Hartmann, Pascal; Rein, Alexander; Gross, Silvia; Seelandt, Britta; Röger, Cornelia; Zieba, Roman; Traut, Alexander; Wark, Michael; Janek, Jürgen; Smarsly, Bernd M

    2011-01-01

    We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO) thin films via dip-coating. Two poly(isobutylene)-b-poly(ethyleneoxide) (PIB-PEO) copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000) are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 °C; these coatings have a specific resistance of 0.5 Ω cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20–25 and 35–45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material. PMID:27877387

  2. Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity

    Directory of Open Access Journals (Sweden)

    Till von Graberg, Pascal Hartmann, Alexander Rein, Silvia Gross, Britta Seelandt, Cornelia Röger, Roman Zieba, Alexander Traut, Michael Wark, Jürgen Janek and Bernd M Smarsly

    2011-01-01

    Full Text Available We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO thin films via dip-coating. Two poly(isobutylene-b-poly(ethyleneoxide (PIB-PEO copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000 are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 °C; these coatings have a specific resistance of 0.5 Ω cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20–25 and 35–45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material.

  3. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    OpenAIRE

    Boltz, Janika

    2011-01-01

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO2 and TiO2. In order to ach...

  4. Deposition of TiN coatings using ACPVD technique on AM60 alloy; Recubrimientos de TiN depositados mediante ACPVD sobre aleaciones de magnesio AM60

    Energy Technology Data Exchange (ETDEWEB)

    Pichel, M.; Candela, N.; Barea, R.; Conejero, G.; Carsi, M.

    2013-06-01

    Magnesium alloys are reaching special interest due to their good specific properties, low cost and good manufacturing properties. However, their low hardness, wear and corrosion resistance limit their applications in certain sectors of industry. These drawbacks can be solved by applying hard ceramic coatings, such as nitrides or metal carbides. TiN is one of the most used coatings due to its high adhesion, hardness, low coefficient of friction and chemical stability. Physical vapor deposition by cathodic arc CAPVD, is a versatile technique, which uses low temperatures and high ionization energies, generating homogeneous coatings. To achieve coatings with high quality, a careful control of the manufacturing parameters is required, such as bias voltage, gas flow or intensity. This paper focuses on magnesium alloys, AM60, coated with TiN using physical vapor deposition cathodic arc technique (CAPVD) at different intensity values (40A and 100A) and surface preparation (grinding up to 4000 grit and polished to 3{mu}m). It was included a final condition with an intermediate Al film. The samples were characterized by X-ray diffraction, roughness, optical microscopy and scanning electron. (Author) 28 refs.

  5. Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

    Directory of Open Access Journals (Sweden)

    Seungjin Lee

    2017-04-01

    Full Text Available Tin disulfide (SnS2 has attracted much attention as a two-dimensional (2D material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2 layers deposited via atomic layer deposition (ALD using tetrakis(dimethylaminotin (TDMASn as a Sn precursor and H2S gas as a sulfur source at low temperature (150° C. The crystallinity of SnS2 was improved by H2S gas annealing. We carried out H2S gas annealing at various conditions (250° C, 300° C, 350° C, and using a three-step method. Angle-resolved X-ray photoelectron spectroscopy (ARXPS results revealed the valence state corresponding to Sn4+ and S2- in the SnS2 annealed with H2S gas. The SnS2 annealed with H2S gas had a hexagonal structure, as measured via X-ray diffraction (XRD and the clearly out-of-plane (A1g mode in Raman spectroscopy. The crystallinity of SnS2 was improved after H2S annealing and was confirmed using the XRD full-width at half-maximum (FWHM. In addition, high-resolution transmission electron microscopy (HR-TEM images indicated a clear layered structure.

  6. Effects of air annealing on the optical, electrical, and structural properties of indium-tin oxide thin films

    International Nuclear Information System (INIS)

    Trejo-Cruz, C.; Mendoza-Galvan, A.; Lopez-Beltran, A.M.; Gracia-Jimenez, M.

    2009-01-01

    The effects of air annealing on the optical, electrical, and structural properties of indium-tin oxide thin films were investigated using spectroscopic ellipsometry in the UV-visible range, reflectance-transmittance spectra at normal incidence in the infrared range, electrical resistivity measurements, and X-ray diffraction. It was found that annealing at 300 o C produces an overall shift to lower photon energies of the optical constant spectra, which is related to the increase in electrical resistivity. The electrical measurements performed in the 25-300 K range show a metallic behavior with large residual resistivity, quantity that increases with annealing temperature and is closely related with the change in the relative intensity of the main diffraction peaks. Also it is shown that under certain conditions of film deposition onto indium-tin oxide, some of its properties can change in a similar way as in air-annealing processing.

  7. Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

    International Nuclear Information System (INIS)

    Li Yali; Li Chunyang; He Deyan; Li Junshuai

    2009-01-01

    We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ∼4.6 x 10 -4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ∼1.21 x 10 21 cm -3 and a lower mobility of ∼11.4 cm 2 V -1 s -1 . More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

  8. Seed-mediated electrochemical growth of gold nanostructures on indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Praig, Vera G.; Szunerits, Sabine [Laboratoire d' Electrochimie et de Physicochimie des Materiaux et des Interfaces (LEPMI), CNRS-INPG-UJF, 1130 rue de la piscine, BP 75, 38402 St. Martin d' Heres Cedex (France); Institut de Recherche Interdisciplinaire (IRI), USR CNRS 3078 and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN),UMR CNRS-8520, Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Piret, Gaelle; Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI), USR CNRS 3078 and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN),UMR CNRS-8520, Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Manesse, Mael [Laboratoire d' Electrochimie et de Physicochimie des Materiaux et des Interfaces (LEPMI), CNRS-INPG-UJF, 1130 rue de la piscine, BP 75, 38402 St. Martin d' Heres Cedex (France); Castel, Xavier [Institut d' Electronique et de Telecommunications de Rennes (IETR), UMR CNRS 6164, 18 rue H. Wallon, BP 406, 22004 Saint-Brieuc Cedex 1 (France)

    2008-11-15

    Two-dimensional gold nanostructures (Au NSs) were fabricated on amine-terminated indium tin oxide (ITO) thin films using constant potential electrolysis. By controlling the deposition time and by choosing the appropriate ITO surface, Au NSs with different shapes were generated. When Au NSs were formed directly on aminosilane-modified ITO, the surface roughness of the interface was largely enhanced. Modification of such Au NSs with n-tetradecanethiol resulted in a highly hydrophobic interface with a water contact angle of 144 . Aminosilane-modified ITO films further modified with colloidal Au seeds before electrochemical Au NSs formation demonstrated interesting optical properties. Depending on the deposition time, surface colors ranging from pale pink to beatgold-like were observed. The optical properties and the chemical stability of the interfaces were characterized using UV-vis absorption spectroscopy. Well-defined localized surface plasmon resonance signals were recorded on Au-seeded interfaces with {lambda}{sub max}=675{+-} 2 nm (deposition time 180 s). The prepared interfaces exhibited long-term stability in various solvents and responded linearly to changes in the corresponding refractive indices. (author)

  9. Seed-mediated electrochemical growth of gold nanostructures on indium tin oxide thin films

    International Nuclear Information System (INIS)

    Praig, Vera G.; Piret, Gaelle; Manesse, Mael; Castel, Xavier; Boukherroub, Rabah; Szunerits, Sabine

    2008-01-01

    Two-dimensional gold nanostructures (Au NSs) were fabricated on amine-terminated indium tin oxide (ITO) thin films using constant potential electrolysis. By controlling the deposition time and by choosing the appropriate ITO surface, Au NSs with different shapes were generated. When Au NSs were formed directly on aminosilane-modified ITO, the surface roughness of the interface was largely enhanced. Modification of such Au NSs with n-tetradecanethiol resulted in a highly hydrophobic interface with a water contact angle of 144 deg. Aminosilane-modified ITO films further modified with colloidal Au seeds before electrochemical Au NSs formation demonstrated interesting optical properties. Depending on the deposition time, surface colors ranging from pale pink to beatgold-like were observed. The optical properties and the chemical stability of the interfaces were characterized using UV-vis absorption spectroscopy. Well-defined localized surface plasmon resonance signals were recorded on Au-seeded interfaces with λ max = 675 ± 2 nm (deposition time 180 s). The prepared interfaces exhibited long-term stability in various solvents and responded linearly to changes in the corresponding refractive indices

  10. Physical properties of chemical vapour deposited nanostructured carbon thin films

    International Nuclear Information System (INIS)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H.; Rajpure, K.Y.

    2011-01-01

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C 10 H 16 )' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp 3 bonds with diamond phase and less for SS shows graphitization effect with dominant sp 2 bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  11. Anomalous growth of whisker-like bismuth-tin extrusions from tin-enriched tin-Bi deposits

    International Nuclear Information System (INIS)

    Hu, C.-C.; Tsai, Y.-D.; Lin, C.-C.; Lee, G.-L.; Chen, S.-W.; Lee, T.-C.; Wen, T.-C.

    2009-01-01

    This article shows the first finding that the anomalous growth of Bi-Sn extrusions from tin-enriched alloys (Sn-xBi with x between 20 and 10 wt.%) can be induced by post-plating annealing in N 2 between 145 and 260 deg. C for 10 min although metal whiskers were commonly formed on the surface of pure metals or alloys of the enriched component. From SEM observations, very similar to Sn whiskers, Bi-Sn extrusions vary in size, shape, length, and diameter with changing the annealing temperature, which are highly important in regarding the potential for failure of electronic products. Annealing resulting in thermal expansion of Sn grains is believed to squeeze the Bi-Sn alloys with relatively low melting points to form whisker-like extrusions although the exact mechanism is unclear

  12. Deposition and microstructure of Ti-containing diamond-like carbon nanocomposite films

    International Nuclear Information System (INIS)

    Yang, Won Jae; Sekino, Tohru; Shim, Kwang Bo; Niihara, Koichi; Auh, Keun Ho

    2005-01-01

    Ti-containing diamond-like carbon (DLC) films were deposited by plasma decomposition of CH 4 /Ar gas mixtures with an introduction of tetrakis(dimethylamino)titanium (TDMAT, Ti[(CH 3 ) 2 N] 4 ), which was used as a precursor of titanium. The films deposited were found to be nanocomposite coatings consisting of TiN nanocrystalline clusters and amorphous hydrocarbon (a-C:H), indicating that the nanocrystalline clusters were embedded in the DLC matrix. The crystallinity of TiN clusters, as well as the Ti atomic concentrations in the films, increased with an increase of substrate temperature. The substrate temperature applied to form a crystalline phase in the DLC matrix induced a graphitization of amorphous hydrocarbon matrix. The increase of volume fraction of TiN nanocrystalline clusters in the DLC matrix enhanced the mechanical properties of nanostructured coatings, although the graphite-like structural transition of DLC matrix happened due to the applied heating

  13. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  14. Experiments on In2S3:Sn Thin Films with up to 1% Tin Content

    Science.gov (United States)

    Kraini, M.; Bouguila, N.; Koaib, J.; Vázquez-Vázquez, C.; López-Quintela, M. A.; Alaya, S.

    2016-11-01

    Tin-doped indium sulfide (In2S3:Sn) thin films with different Sn:In molar ratios (0% to 1% by mol in solution) have been deposited on glass substrates by a chemical spray pyrolysis method. The films were investigated by x-ray diffraction analysis, optical absorption, Raman, and photoluminescence spectroscopies, field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, and atomic force microscopy. The structural properties revealed that the In2S3:Sn thin films had polycrystalline cubic structure with average crystallite size increasing from 16.3 nm to 25.5 nm. The surface morphology of the films was continuous and crack free. The average and root-mean-square roughness increased from 13.12 nm to 31.65 nm and from 16.14 nm to 39.39 nm, respectively, with increasing Sn:In molar ratio. Raman studies revealed the presence of vibration modes related to In2S3 phase, with no signature of secondary phases. The transmission coefficient was about 65% to 70% in the visible region and 70% to 90% in the near-infrared region. The optical bandgap values for allowed direct transitions in In2S3:Sn were found to lie in the range from 2.68 eV to 2.80 eV. The refractive index of the In2S3:Sn thin films decreased from 2.45 to 2.37 while the k values lay in the range from 0.02 to 0.25 for all wavelengths. Defect-related photoluminescence properties are also discussed. These In2S3:Sn films are promising candidates for use in optoelectronic and photovoltaic devices.

  15. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    Energy Technology Data Exchange (ETDEWEB)

    An, Hongyu; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji, E-mail: Shi.j.aa@m.titech.ac.jp [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan); Wang, Jian [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Szivos, Janos; Safran, Gyorgy [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly-Thege ut 29-33 (Hungary)

    2015-11-28

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.

  16. Deposition of magnetoelectric hexaferrite thin films on substrates of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-12-15

    Magnetoelectric M-type hexaferrite thin films (SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19}) were deposited using Pulsed Laser Deposition (PLD) technique on Silicon substrate. A conductive oxide layer of Indium-Tin Oxide (ITO) was deposited as a buffer layer with the dual purposes of 1) to reduce lattice mismatch between the film and silicon and 2) to lower applied voltages to observe magnetoelectric effects at room temperature on Silicon based devices. The film exhibited magnetoelectric effects as confirmed by vibrating sample magnetometer (VSM) techniques in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe magnetoelectric effects was typically about 1000 times larger. The magnetoelectric thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance techniques. We measured saturation magnetization of 650 G, and coercive field of about 150 Oe for these thin films. The change in remanence magnetization was measured in the presence of DC voltages and the changes in remanence were in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a magnetoelectric coupling, α, of 1.36×10{sup −9} s m{sup −1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.

  17. Kinetics of the formation of the titanium nitruro film (TiN)

    International Nuclear Information System (INIS)

    Rojas Andres; Devia C, Alfonso; Alzate Rafael

    1999-01-01

    They are presented in succinct form the factors that intervene in the growth, adhesion of the film and election of the support material in the process of formation of TiN film. Equally it's carried out the kinetic development of the possible reactions (ionization and excitement) involved in the process

  18. Surface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphere

    Science.gov (United States)

    Yudar, H. Hakan; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan; Pat, Suat

    2016-08-01

    This study focused on the characterization and properties of transparent and conductive indium tin oxide (ITO) thin films deposited in argon atmosphere. ITO thin films were coated onto glass substrates by radio frequency (RF) magnetron sputtering technique at 75 and 100 W RF powers. Structural characteristics of producing films were investigated through X-ray diffraction analysis. UV-Vis spectrophotometer and interferometer were used to determine transmittance, absorbance and reflectance values of samples. The surface morphology of the films was characterized by atomic force microscope. The calculated band gaps were 3.8 and 4.1 eV for the films at 75 and 100 W, respectively. The effect of RF power on crystallinity of prepared films was explored using mentioned analysis methods. The high RF power caused higher poly crystallinity in the produced samples. The thickness and refractive index values for all samples increased respect to an increment of RF power and were calculated as 20, 50 nm and 1.71, 1.86 for samples at 75 and 100 W, respectively. Finally, the estimated grain sizes for all prepared films decreased with increasing of 2 θ degrees, and the number of crystallite per unit volume was calculated. It was found that nearly all properties including sheet resistance and resistivity depend on the RF power.

  19. Influence of thermal treatment in N{sub 2} atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stroescu, H.; Anastasescu, M.; Preda, S.; Nicolescu, M.; Stoica, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, Atomistilor 409, RO-77125, Bucharest-Magurele (Romania); Kampylafka, V.; Aperathitis, E. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Gartner, M., E-mail: mgartner@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania)

    2013-08-31

    We report the influence of the normal thermal treatment (TT) and of rapid thermal annealing (RTA) on the microstructural, optical and electrical properties of indium tin oxide (ITO) and nitrogen doped indium tin oxide (ITO:N) thin films. The TT was carried out for 1 h at 400 °C and the RTA for 1 min up to 400 °C, both in N{sub 2} atmosphere. The ITO and ITO:N films were deposited by reactive sputtering in Argon, and respectively Nitrogen plasma, on Si with (100) and (111) orientation. The present study brings data about the microstructural and optical properties of ITO thin films with thicknesses around 300–400 nm. Atomic Force Microscopy analysis showed the formation of continuous and homogeneous films, fully covered by quasi-spherical shaped particles, with higher roughness values on Si(100) as compared to Si(111). Spectroscopic ellipsometry allowed the determination of film thickness, optical band gap as well as of the dispersion curves of n and k optical constants. X-ray diffraction analysis revealed the presence of diffraction peaks corresponding to the same nominal bulk composition of ITO, but with different intensities and preferential orientation depending on the substrate, atmosphere of deposition and type of thermal treatment. - Highlights: ► Stability of the films can be monitored by experimental ellipsometric spectra. ► The refractive index of indium tin oxide film on 0.3–30 μm range is reported. ► Si(100) substrate induces rougher film surfaces than Si(111). ► Rapid thermal annealing and normal thermal treatment lead to stable conductive film. ► The samples have a higher preferential orientation after rapid thermal annealing.

  20. Design, synthesis, thin film deposition and characterization of new indium tin oxide anode functionalization/hole transport organic materials and their application to high performance organic light-emitting diodes

    Science.gov (United States)

    Huang, Qinglan

    The primary goals of this dissertation were to understand the physical and chemical aspects of organic light-emitting diode (OLED) fundamentals, develop new materials as well as device structures, and enhance OLED electroluminescent (EL) response. Accordingly, this dissertation analyzes the relative effects of indium tin oxide (ITO) anode-hole transporting layer (HTL) contact vs. the intrinsic HTL material properties on OLED EL response. Two siloxane-based HTL materials, 4,4'-bis[(4″ -trichlorosilylpropyl-1″-naphthylphenylamino)biphenyl (NPB-Si2) and 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPD-Si2) have thereby been designed, synthesized and covalently bound to ITO surface. They afford a 250% increase in luminance and ˜50% reduction in turn-on voltage vs. comparable 4,4'-bis(1-naphthylphenylamino)biphenyl (NPB) HTL-based devices. These results suggest new strategies for developing OLED HTL structures, with focus on the anode-HTL contact. Furthermore, archetypical OLED device structures have been refined by simultaneously incorporating the TPD-Si2 layer and a hole- and exciton-blocking/electron transport layer (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) in tris(8-hydroxyquinolato)aluminum(III) and tetrakis(2-methyl-8-hydroxyquinolinato)borate-based OLEDs. The refined device structures lead to high performance OLEDs such as green-emitting OLEDs with maximum luminance (Lmax) ˜ 85,000 cd/m2, power and forward external quantum efficiencies (eta p and etaext) as high as 15.2 lm/W and 4.4 +/- 0.5%, respectively, and blue-emitting OLEDs with Lmax 30,000 cd/m 2, and ˜5.0 lm/W and 1.6 +/- 0.2% etap and eta ext, respectively. The high performance is attributed to synergistically enhanced hole/electron injection and recombination efficiency. In addition, molecule-scale structure effects at ITO anode-HTL interfaces have been systematically probed via a self-assembly approach. A series of silyltriarylamine precursors differing in aryl group and

  1. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  2. Structural study near the film/substrate interface of a plasma sprayed tin coating on low carbon steel

    International Nuclear Information System (INIS)

    Vourlias, G.; Pistofidis, N.; Stergioudis, G.; Polychroniadis, E.K.

    2006-01-01

    The structure near the film/substrate interface of tin coatings deposited with the plasma spray technique on a low carbon steel substrate is examined with scanning electron microscopy (SEM), X-ray diffraction (XRD), conventional transmission electron microscopy (CTEM) and high resolution electron microscopy (HREM), focusing on the structural properties affecting the corrosion performance. This examination revealed the presence of several Fe-Sn phases, which ensure good adhesion of the coatings to the underlying steel. Furthermore, amorphous Sn or SnO x were also detected in the coating, which, being in low concentration, have no effect on the coating properties

  3. Effects of Loading Frequency and Film Thickness on the Mechanical Behavior of Nanoscale TiN Film

    Science.gov (United States)

    Liu, Jin-na; Xu, Bin-shi; Wang, Hai-dou; Cui, Xiu-fang; Jin, Guo; Xing, Zhi-guo

    2017-09-01

    The mechanical properties of a nanoscale-thickness film material determine its reliability and service life. To achieve quantitative detection of film material mechanical performance based on nanoscale mechanical testing methods and to explore the influence of loading frequency of the cycle load on the fatigue test, a TiN film was prepared on monocrystalline silicon by magnetron sputtering. The microstructure of the nanoscale-thickness film material was characterized by using scanning electron microscopy and high-resolution transmission electron microscopy. The residual stress distribution of the thin film was obtained by using an electronic film stress tester. The hardness values and the fatigue behavior were measured by using a nanomechanical tester. Combined with finite element simulation, the paper analyzed the influence of the film thickness and loading frequency on the deformation, as well as the equivalent stress and strain. The results showed that the TiN film was a typical face-centered cubic structure with a large amount of amorphous. The residual compressive stress decreased gradually with increasing thin film thickness, and the influence of the substrate on the elastic modulus and hardness was also reduced. A greater load frequency would accelerate the dynamic fatigue damage that occurs in TiN films.

  4. Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Hoffman, D.M. [Houston Univ., TX (United States); Atagi, L.M. [Houston Univ., TX (United States)]|[Los Alamos National Lab., NM (United States); Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang [Houston Univ., TX (United States); Rubiano, R.R. [Massachusetts Inst. of Tech., Cambridge, MA (United States); Springer, R.W.; Smith, D.C. [Los Alamos National Lab., NM (United States)

    1994-06-01

    Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

  5. Studies of the micromorphology of sputtered TiN thin films by autocorrelation techniques

    Science.gov (United States)

    Smagoń, Kamil; Stach, Sebastian; Ţălu, Ştefan; Arman, Ali; Achour, Amine; Luna, Carlos; Ghobadi, Nader; Mardani, Mohsen; Hafezi, Fatemeh; Ahmadpourian, Azin; Ganji, Mohsen; Grayeli Korpi, Alireza

    2017-12-01

    Autocorrelation techniques are crucial tools for the study of the micromorphology of surfaces: They provide the description of anisotropic properties and the identification of repeated patterns on the surface, facilitating the comparison of samples. In the present investigation, some fundamental concepts of these techniques including the autocorrelation function and autocorrelation length have been reviewed and applied in the study of titanium nitride thin films by atomic force microscopy (AFM). The studied samples were grown on glass substrates by reactive magnetron sputtering at different substrate temperatures (from 25 {}°C to 400 {}°C , and their micromorphology was studied by AFM. The obtained AFM data were analyzed using MountainsMap Premium software obtaining the correlation function, the structure of isotropy and the spatial parameters according to ISO 25178 and EUR 15178N. These studies indicated that the substrate temperature during the deposition process is an important parameter to modify the micromorphology of sputtered TiN thin films and to find optimized surface properties. For instance, the autocorrelation length exhibited a maximum value for the sample prepared at a substrate temperature of 300 {}°C , and the sample obtained at 400 {}°C presented a maximum angle of the direction of the surface structure.

  6. Record mobility in transparent p-type tin monoxide films and devices by phase engineering

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-06-25

    Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.

  7. Large-Grain Tin-Rich Perovskite Films for Efficient Solar Cells via Metal Alloying Technique.

    Science.gov (United States)

    Tavakoli, Mohammad Mahdi; Zakeeruddin, Shaik Mohammed; Grätzel, Michael; Fan, Zhiyong

    2018-03-01

    Fast research progress on lead halide perovskite solar cells has been achieved in the past a few years. However, the presence of lead (Pb) in perovskite composition as a toxic element still remains a major issue for large-scale deployment. In this work, a novel and facile technique is presented to fabricate tin (Sn)-rich perovskite film using metal precursors and an alloying technique. Herein, the perovskite films are formed as a result of the reaction between Sn/Pb binary alloy metal precursors and methylammonium iodide (MAI) vapor in a chemical vapor deposition process carried out at 185 °C. It is found that in this approach the Pb/Sn precursors are first converted to (Pb/Sn)I 2 and further reaction with MAI vapor leads to the formation of perovskite films. By using Pb-Sn eutectic alloy, perovskite films with large grain sizes up to 5 µm can be grown directly from liquid phase metal. Consequently, using an alloying technique and this unique growth mechanism, a less-toxic and efficient perovskite solar cell with a power conversion efficiency (PCE) of 14.04% is demonstrated, while pure Sn and Pb perovskite solar cells prepared in this manner yield PCEs of 4.62% and 14.21%, respectively. It is found that this alloying technique can open up a new direction to further explore different alloy systems (binary or ternary alloys) with even lower melting point. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry

    NARCIS (Netherlands)

    Van Hao, B.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.; Schmitz, Jurriaan

    2009-01-01

    Thin TiN films have many important applications in Integrated Circuit (IC) technology. In spite of its chemical inertness, it is reported that TiN can be oxidized when exposed to oxidants (O2, H2O, etc.). To avoid an undesired oxidation of the metal-nitride layers, a study on this process is

  9. Study on the electrical properties of ITO films deposited by facing target sputter deposition

    International Nuclear Information System (INIS)

    Kim, Youn J; Jin, Su B; Kim, Sung I; Choi, Yoon S; Choi, In S; Han, Jeon G

    2009-01-01

    This study examined the mechanism for the change in the electrical properties (carrier concentration (n) and mobility (μ)) of tin-doped indium oxide (ITO) films deposited by magnetron sputtering in a confined facing magnetic field. The relationship between the carrier concentration and the mobility was significantly different from the results reported for ITO films deposited by other magnetron sputtering processes. The lowest resistivity obtained for ITO films deposited in a confined facing magnetic field at low substrate temperatures (approximately 120 0 C) was 4.26 x 10 -4 Ω cm at a power density of 3 W cm -2 . Crystalline ITO films were obtained at a low power density range from 3 to 5 W cm -2 due to the increase in the substrate temperature from 120 to 162 0 C. This contributed to the increased carrier concentration and decreased electrical resistivity. X-ray photoelectron spectroscopy revealed an increase in the concentration of the Sn 4+ states. This was attributed to the formation of a crystalline ITO film, which effectively enhanced the carrier concentration and reduced the carrier mobility.

  10. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  11. Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor

    NARCIS (Netherlands)

    Li, Jeng-Ting; Liu, Li-Chih; Chen, Jen-Sue; Jeng, Jiann-Shing; Liao, Po-Yung; Chiang, Hsiao-Cheng; Chang, Ting-Chang; Nugraha, Mohamad Insan; Loi, Maria Antonietta

    2017-01-01

    Carrier transport properties of solution processed ultra thin (4 nm) zinc-tin oxide (ZTO) thin film transistor are investigated based on its transfer characteristics measured at the temperature ranging from 310K to 77K. As temperature decreases, the transfer curves show a parellel shift toward more

  12. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  13. Room-temperature relaxor ferroelectricity and photovoltaic effects in tin titanate directly deposited on a silicon substrate

    Science.gov (United States)

    Agarwal, Radhe; Sharma, Yogesh; Chang, Siliang; Pitike, Krishna C.; Sohn, Changhee; Nakhmanson, Serge M.; Takoudis, Christos G.; Lee, Ho Nyung; Tonelli, Rachel; Gardner, Jonathan; Scott, James F.; Katiyar, Ram S.; Hong, Seungbum

    2018-02-01

    Tin titanate (SnTi O3 ) has been notoriously impossible to prepare as a thin-film ferroelectric, probably because high-temperature annealing converts much of the S n2 + to S n4 + . In the present paper, we show two things: first, perovskite phase SnTi O3 can be prepared by atomic-layer deposition directly onto p -type Si substrates; and second, these films exhibit ferroelectric switching at room temperature, with p -type Si acting as electrodes. X-ray diffraction measurements reveal that the film is single-phase, preferred-orientation ferroelectric perovskite SnTi O3 . Our films showed well-saturated, square, and repeatable hysteresis loops of around 3 μ C /c m2 remnant polarization at room temperature, as detected by out-of-plane polarization versus electric field and field cycling measurements. Furthermore, photovoltaic and photoferroelectricity were found in Pt /SnTi O3/Si /SnTi O3/Pt heterostructures, the properties of which can be tuned through band-gap engineering by strain according to first-principles calculations. This is a lead-free room-temperature ferroelectric oxide of potential device application.

  14. The Tribological Behaviors of Three Films Coated on Biomedical Titanium Alloy by Chemical Vapor Deposition

    Science.gov (United States)

    Wang, Song; Liao, Zhenhua; Liu, Yuhong; Liu, Weiqiang

    2015-11-01

    Three thin films (DLC, a-C, and TiN) were performed on Ti6Al4V by chemical vapor deposition. Carbon ion implantation was pretreated for DLC and a-C films while Ti transition layer was pretreated for TiN film to strengthen the bonding strength. X-ray diffraction, Raman measurement, nano-hardness and nano-scratch tester, and cross-section etching by FIB method were used to analyze film characteristics. Tribological behaviors of these coatings were studied by articulation with both ZrO2 and UHMWPE balls using ball-on-disk sliding. The thickness values reached ~0.46, ~0.33, and ~1.67 μm for DLC, a-C, and TiN film, respectively. Nano-hardness of the coatings compared with that of untreated and bonding strength (critical load in nano-scratch test) values of composite coatings compared with that of monolayer film all increased significantly, respectively. Under destructive test (ZrO2 ball conterface) in bovine serum lubrication, TiN coating revealed the best wear resistance while DLC showed the worst. Film failure was mainly attributed to the plowing by hard ZrO2 ball characterized by abrasive and adhesive wear. Under normal test (UHMWPE ball conterface), all coatings showed significant improvement in wear resistance both in dry sliding and bovine serum lubrication. Both DLC and a-C films showed less surface damage than TiN film due to the self-lubricating phenomenon in dry sliding. TiN film showed the largest friction coefficient both in destructive and normal tests, devoting to the big TiN grains thus leading to much rougher surface and then a higher value. The self-lubricating film formed on DLC and a-C coating could also decrease their friction coefficients. The results indicated that three coatings revealed different wear mechanisms, and thick DLC or a-C film was more promising in application in lower stress conditions such as artificial cervical disk.

  15. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films.

    Science.gov (United States)

    Sanctis, Shawn; Koslowski, Nico; Hoffmann, Rudolf; Guhl, Conrad; Erdem, Emre; Weber, Stefan; Schneider, Jörg J

    2017-06-28

    Amorphous zinc tin oxide (ZTO) thin films are accessible by a molecular precursor approach using mononuclear zinc(II) and tin(II) compounds with methoxyiminopropionic acid ligands. Solution processing of two precursor solutions containing a mixture of zinc and tin(II)-methoxyiminopropinato complexes results in the formation of smooth homogeneous thin films, which upon calcination are converted into the desired semiconducting amorphous ZTO thin films. ZTO films integrated within a field-effect transistor (FET) device exhibit an active semiconducting behavior in the temperature range between 250 and 400 °C, giving an increased performance, with mobility values between μ = 0.03 and 5.5 cm 2 /V s, with on/off ratios increasing from 10 5 to 10 8 when going from 250 to 400 °C. Herein, our main emphasis, however, was on an improved understanding of the material transformation pathway from weak to high performance of the semiconductor in a solution-processed FET as a function of the processing temperature. We have correlated this with the chemical composition and defects states within the microstructure of the obtained ZTO thin film via photoelectron spectroscopy (X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy), Auger electron spectroscopy, electron paramagnetic resonance spectroscopy, atomic force microscopy, and photoluminescence investigations. The critical factor observed for the improved performance within this ZTO material could be attributed to a higher tin concentration, wherein the contributions of point defects arising from the tin oxide within the final amorphous ZTO material play the dominant role in governing the transistor performance.

  16. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  17. Texture development, microstructure and phase transformation characteristics of sputtered Ni-Ti Shape Memory Alloy films grown on TiN<111>

    Energy Technology Data Exchange (ETDEWEB)

    Martins, R.M.S., E-mail: rmsm@fct.unl.p [Unidade de Fisica e Aceleradores, Instituto Tecnologico e Nuclear, EN10, 2696-953 Sacavem (Portugal); Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Centro de Fisica Nuclear da Universidade de Lisboa (CFNUL), Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); Schell, N. [GKSS Research Center Geesthacht, Max-Planck-Str. 1, 21502 Geesthacht (Germany); Reuther, H. [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Pereira, L.; Mahesh, K.K.; Silva, R.J.C.; Fernandes, F.M. Braz [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal)

    2010-10-29

    Near equiatomic Ni-Ti films have been deposited by magnetron co-sputtering on TiN films with a topmost layer formed by < 111> oriented grains (TiN/SiO{sub 2}/Si(100) substrate) in a chamber installed at a synchrotron radiation beamline. In-situ X-ray diffraction during Ni-Ti film growth and their complementary ex-situ characterization by Auger electron spectroscopy, scanning electron microscopy and electrical resistivity measurements during temperature cycling have allowed us to establish a relationship between the structure and processing parameters. A preferential development of < 110> oriented grains of the B2 phase since the beginning of the deposition has been observed (without and with the application of a substrate bias voltage of -45 and -90 V). The biaxial stress state is considerably influenced by the energy of the bombarding ions, which is dependent on the substrate bias voltage value applied during the growth of the Ni-Ti film. Furthermore, the present work reveals that the control of the energy of the bombarding ions is a promising tool to vary the transformation characteristics of Ni-Ti films, as shown by electrical resistivity measurements during temperature cycling. The in-situ study of the structural evolution of the growing Ni-Ti film as a consequence of changing the Ti:Ni ratio during deposition (on a TiN<111> layer) has also been performed. The preferential growth of < 110> oriented grains of the Ni-Ti B2 phase has been as well observed despite the precipitation of Ti{sub 2}Ni during the deposition of a Ti-rich Ni-Ti film fraction. Functionally graded Ni-Ti films should lead to an intrinsic 'two-way' shape memory effect which is a plus for the miniaturization of Ni-Ti films based devices in the field of micro-electro-mechanical systems.

  18. Comparison of mechanical behavior of TiN, TiNC, CrN/TiNC, TiN/TiNC films on 9Cr18 steel by PVD

    Science.gov (United States)

    Feng, Xingguo; Zhang, Yanshuai; Hu, Hanjun; Zheng, Yugang; Zhang, Kaifeng; Zhou, Hui

    2017-11-01

    TiN, TiNC, CrN/TiNC and TiN/TiNC films were deposited on 9Cr18 steel using magnetron sputtering technique. The morphology, composition, chemical state and crystalline structure of the films were observed and analyzed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Hardness and adhesion force were tested by nanoindentation and scratch tester, respectively. The friction and wear behavior of TiN, TiNC, CrN/TiNC and TiN/TiNC films sliding against GCr15 balls were investigated and compared synthetically using ball-on-disk tribometer. It was found that Tisbnd N, Tisbnd C, Tisbnd Nsbnd C and Csbnd C bonds were formed. The TiN/TiNC film was composed of TiN, TiC and TiNC phases. Hardness and adhesion force results indicated that although the TiN film possessed the highest hardness, its adhesion force was lowest among all the films. Tribological test results showed that the friction coefficient of TiN/TiNC was much lower than that of TiN and the wear rate decreases remarkably from 2.3 × 10-15 m3/Nm to 7.1 × 10-16 m3/Nm, which indicated the TiN/TiNC film has better wear resistance.

  19. Effect of plasma molybdenized buffer layer on adhesive properties of TiN film coated on Ti6Al4V alloy

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Lin, E-mail: qinlin@tyut.edu.cn; Yi, Hong; Kong, Fanyou; Ma, Hua; Guo, Lili; Tian, Linhai; Tang, Bin

    2017-05-01

    Highlights: • A molybdenized layer was prepared as a buffer layer under TiN film on Ti6Al4V. • The molybdenized layer can enhance adhesion strength of PVD coatings effectively. • The duplex treated samples increase elastic energy ratio in the impact tests. • The enhancement attributes to the hardness improvement and inverted-S shape elastic modulus profile of the modified layer. - Abstract: Effect of molybdenized buffer layer on adhesion strength of TiN film on Ti6Al4V alloy was investigated. The buffer layer composed of a dense molybdenum deposition layer, a rapid drop zone and a slow fall zone was prepared using double glow plasma surface alloying technique. Scratch tests and low energy repeated impact tests were adopted to comparatively evaluate the duplex treated layers and the single TiN samples. The results show that the critical load was increased from 62 N for the single TiN film to over 100 N for the duplex treated layer. The volume of impact pit, formed in impact tests, of the single TiN samples is 9.15 × 10{sup 6} μm{sup 3}, and about 1.5 times than that of the duplex treated samples. The Leeb hardness values reveal that about 70% impact energy was transferred to the single TiN samples to generate permanent deformation, while that was only about 47% for the duplex treated samples. The mechanism of improving adhesion strength is attributed to synergistic effect due to an inverted-S shape elastic modulus distribution produced by the molybdenized layer.

  20. Nanomechanical properties of dip coated indium tin oxide films on glass

    International Nuclear Information System (INIS)

    Biswas, Nilormi; Ghosh, Priyanka; Sarkar, Saswati; Moitra, Debabrata; Biswas, Prasanta Kumar; Jana, Sunirmal; Mukhopadhyay, Anoop Kumar

    2015-01-01

    Nanomechanical properties of indium tin oxide (ITO) thin films dip coated from precursor sols of varying equivalent oxide weight percentage (wt.%) onto commercial soda lime silica (SLS) glass substrate were evaluated by nanoindentation technique at an ultralow load of 50 μN. It was found that the increase in wt.% beyond 6 in the precursor sols, had an adverse effect on nanohardness and Young's modulus of the films. Moreover, relatively thicker triple layered film (about 240 nm) had inferior nanomechanical properties as compared to the single layered film. Interestingly, the ITO foam coating on SLS glass substrate had nanomechanical properties nearly as good as those of the single layered films. These observations are explained in terms of the relative differences in crystallinity, stiffness and elastic deformation ability of the films. - Highlights: • Sol–gel indium tin oxide thin films and foam coating • Crystallinity and nanomechanical property inversely relate to sol oxide content. • Foam coating behaves like the thin films

  1. Physicochemical characterization of point defects in fluorine doped tin oxide films

    Science.gov (United States)

    Akkad, Fikry El; Joseph, Sudeep

    2012-07-01

    The physical and chemical properties of spray deposited FTO films are studied using FESEM, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), electrical and optical measurements. The results of XRD measurements showed that the films are polycrystalline (grain size 20-50 nm) with Rutile structure and mixed preferred orientation along the (200) and (110) planes. An angular shift of the XRD peaks after F-doping is observed and interpreted as being due to the formation of substitutional fluorine defects (FO) in presence of high concentration of oxygen vacancies (VO) that are electrically neutral. The electrical neutrality of oxygen vacancies is supported by the observation that the electron concentration n is two orders of magnitude lower than the VO concentration calculated from chemical analyses using XPS measurements. It is shown that an agreement between XPS, XRD, and Hall effect results is possible provided that the degree of deviation from stoichiometry is calculated with the assumption that the major part of the bulk carbon content is involved in O-C bonds. High temperature thermal annealing is found to cause an increase in the FO concentration and a decrease in both n and VO concentrations with the increase of the annealing temperature. These results could be interpreted in terms of a high temperature chemical exchange reaction between the SnO2 matrix and a precipitated fluoride phase. In this reaction, fluorine is released to the matrix and Sn is trapped by the fluoride phase, thus creating substitutional fluorine FO and tin vacancy VSn defects. The enthalpy of this reaction is determined to be approximately 2.4 eV while the energy of formation of a VSn through the migration of SnSn host atom to the fluoride phase is approximately 0.45 eV.

  2. Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Christian Dunkel

    2014-04-01

    Full Text Available Well-ordered 3D mesoporous indium tin oxide (ITO films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs. Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene-b-poly(ethylene oxide block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs.

  3. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  4. Studies on tin oxide films prepared by electron beam evaporation ...

    Indian Academy of Sciences (India)

    Unknown

    Lousa A, Gimeno S and Marti J 1994 Vacuum 45 1143. Lou J C, Lin M S, Chyi J I and Shieh J H 1983 Thin Solid. Films 106 163. Melsheimer J and Tesche B 1986 Thin Solid Films 138 71. Minami Tadatsugu, Hidehito, Hidechito Nanto and Takata. Shinzo 1988 Jap. J. Appl. Phys. 27 L-28. Nomura K, Ujihira Y and Sharma ...

  5. Chemical vapor deposition of nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Vyrovets, I.I.; Gritsyna, V.I.; Dudnik, S.F.; Opalev, O.A.; Reshetnyak, O.M.; Strel'nitskij, V.E.

    2008-01-01

    The brief review of the literature is devoted to synthesis of nanocrystalline diamond films. It is shown that the CVD method is an effective way for deposition of such nanostructures. The basic technological methods that allow limit the size of growing diamond crystallites in the film are studied.

  6. OPTIMISATION OF SPRAY DEPOSITED Sno2 THIN FILM FOR ...

    African Journals Online (AJOL)

    Dr Obe

    1987-09-01

    Sep 1, 1987 ... ABSTRACT. The use of conducting tin-oxide (SnO2 ) films for fabrication of solar cell is becoming increasingly important because of reasonably high efficiency and ease in fabrication. The role of the thin-oxide film is very critical for high efficiency. Resistivity, thickness and transmittance of the film should be ...

  7. Formaldehyde assisted reduction achieved p-type orthorhombic tin oxide film prepared by an inexpensive chemical method

    Science.gov (United States)

    Sun, Jian; Chen, Zequn; Nie, Sha; Yu, Zhigen; Yan, Shenghui; Gong, Hao; Tang, Chunhua; Bai, Xue; Xu, Jianmei; Zhao, Ling; Zhou, Wei; Wang, Qing

    2017-11-01

    The fabrication of tin oxide thin film of orthorhombic phase has been succeeded under the high pressures from 1.5 GPa to 50 GPa. In this paper, we demonstrate the viability of p-type tin oxide thin film at atmosphere pressure of 0.1 MPa, by a chemical method employing formaldehyde (HCHO) during the annealing process. By using formaldehyde to form formaldehyde-argon mixed reducing ambiance in the chemical sol-gel process, limited oxidation is reached and p-type tin oxide films of orthorhombic phase under ambient pressure are eventually achieved under optimized experimental conditions. Specifically, we have developed a p-type tin oxide thin film with an optimal Hall mobility of 8.6 cm2 V‑1 s‑1. Besides, our results reveal that a Sn rich environment can lead to a higher hole mobility experimentally.

  8. Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

    KAUST Repository

    Wei, Binbin

    2018-04-09

    Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

  9. Characteristics of tin oxide-based thin film transistors prepared by DC magnetron sputtering.

    Science.gov (United States)

    Moon, Yeon-Keon; Kim, Woong-Sun; Kim, Kyung-Taek; Shin, Se-Young; Park, Jong-Wan

    2012-04-01

    Here we demonstrate the fabrication of SnO(x) thin-film transistors (TFTs), where SnO(x) thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnO(x) thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnO(x) thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer.

  10. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren

    2015-01-01

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

  11. Ultrathin films of homeotropically aligned columnar liquid crystals on indium tin oxide electrodes

    Science.gov (United States)

    Charlet, E.; Grelet, E.; Brettes, P.; Bock, H.; Saadaoui, H.; Cisse, L.; Destruel, P.; Gherardi, N.; Seguy, I.

    2008-01-01

    We report the achievement of very thin films (thickness of about 50nm) of thermotropic columnar liquid crystal in homeotropic (columns normal to the interface) orientation on indium tin oxide (ITO) electrodes. The face-on alignment of the discotic compound has been obtained by thermal annealing without any intermediate coating between the mesophase and the ITO substrate. Such a columnar mesophase alignment is thus shown on a substrate of technological interest in open supported thin film reaching the thickness range suitable for organic photovoltaic devices.

  12. Electron transfer across anodic films formed on tin in carbonate-bicarbonate buffer solution

    Energy Technology Data Exchange (ETDEWEB)

    Gervasi, C.A. [Universidad Nacional de La Plata (Argentina). Facultad de Ciencias Exactas; Universidad Nacional de La Plata (Argentina). Facultad de Ingenieria; Folquer, M.E. [Universidad Nacional de Tucaman (Argentina). Inst. de Quimica Fisica; Vallejo, A.E. [Universidad Nacional de La Plata (Argentina). Facultad de Ingenieria; Alvarez, P.E. [Universidad Nacional de Tucaman (Argentina). Inst. de Fisica

    2005-01-15

    Impedance and steady-state data were recorded in order to study the kinetics of electron transfer between passive tin electrodes and an electrolytic solution containing the K{sub 3}Fe(CN){sub 6}-K{sub 4}Fe(CN){sub 6} redox couple. Film thickness plays a key role in determining the type of electronic conduction of these oxide covered electrodes. Electron exchange with the oxide takes place with participation of the conduction band in the semiconducting film. A mechanism involving direct electron tunneling through the space charge barrier is the most suitable to interpret the experimental evidence. (Author)

  13. Deposition of conductive TiN shells on SiO2 nanoparticles with a fluidized bed ALD reactor

    NARCIS (Netherlands)

    Didden, A.; Hillebrand, P.; Wollgarten, M.; Dam, B.; Van de Krol, R.

    2016-01-01

    Conductive TiN shells have been deposited on SiO2 nanoparticles (10–20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of

  14. Sensing properties of tin acetylacetonate-based thin films doped with platinum

    Czech Academy of Sciences Publication Activity Database

    Fitl, P.; Myslík, V.; Vrňata, M.; Náhlík, J.; Kopecký, D.; Vlček, J.; Hofmann, J.; Lančok, Ján

    2012-01-01

    Roč. 24, č. 2 (2012), s. 75-86 ISSN 0914-4935 R&D Projects: GA ČR(CZ) GAP108/11/1298 Institutional research plan: CEZ:AV0Z10100522 Keywords : gas sensing * tin acetylacetonate * pulsed laser deposition (PLD) method * selectivity tunable by temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.288, year: 2012 http://122.249.91.209/myukk/Journal/Download.php?fn=SM0870.pdf

  15. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  16. F-doped SnO2 thin films grown on flexible substrates at low temperatures by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, H.; Auyeung, R.C.Y.; Pique, A.

    2011-01-01

    Fluorine-doped tin oxide (SnO 2 :F) films were deposited on polyethersulfone plastic substrates by pulsed laser deposition. The electrical and optical properties of the SnO 2 :F films were investigated as a function of deposition conditions such as substrate temperature and oxygen partial pressure during deposition. High quality SnO 2 :F films were achieved under an optimum oxygen pressure range (7.4-8 Pa) at relatively low growth temperatures (25-150 deg. C). As-deposited films exhibited low electrical resistivities of 1-7 mΩ-cm, high optical transmittance of 80-90% in the visible range, and optical band-gap energies of 3.87-3.96 eV. Atomic force microscopy measurements revealed a reduced root mean square surface roughness of the SnO 2 :F films compared to that of the bare substrates indicating planarization of the underlying substrate.

  17. The Influence of a TiN Film on the Electronic Contribution to the Thermal Conductivity of a TiC Film in a TiN-TiC Layer System

    Science.gov (United States)

    Jagannadham, K.

    2018-01-01

    TiC and TiN films were deposited by reactive magnetron sputtering on Si substrates. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterization of the microstructure and interface structure have been carried out and the stoichiometric composition of TiC is determined. Thermal conductivity and interface thermal conductance between different layers in the films are evaluated by the transient thermo reflectance (TTR) and three-omega (3- ω) methods. The results showed that the thermal conductivity of the TiC films increased with temperature. The thermal conductivity of TiC in the absence of TiN is dominated by phonon contribution. The electronic contribution to the thermal conductivity of TiC in the presence of TiN is found to be more significant. The interface thermal conductance of the TiC/TiN interface is much larger than that of interfaces at Au/TiC, TiC/Si, or TiN/Si. The interface thermal conductance between TiC and TiN is reduced by the layer formed as a result of interdiffusion.

  18. Microporous SiO2 with huge electric-double-layer capacitance for low-voltage indium tin oxide thin-film transistors

    International Nuclear Information System (INIS)

    Lu Aixia; Sun Jia; Jiang Jie; Wan Qing

    2009-01-01

    Electric-double-layer (EDL) effect is observed in microporous SiO 2 dielectric films deposited at room temperature by plasma-enhanced chemical vapor deposition method. Indium tin oxide thin-film transistors gated by such microporous SiO 2 gate dielectric are fabricated at room temperature, and a low operating voltage of 1.5 V is obtained due to the huge EDL specific capacitance (2.14 μF/cm 2 ). The field-effect electron mobility is estimated to be 118 cm 2 V -1 s -1 . Current on/off ratio and subthreshold gate voltage swing are estimated to be 5x10 6 and 92 mV/decade, respectively. Room-temperature deposited microporous SiO 2 dielectric is promising for low-power field-effect transistors on temperature sensitive substrates.

  19. Investigation of pH effect on chemically synthesized tin selenide films

    International Nuclear Information System (INIS)

    Okereke, N.A.; Ekpunobi, A.J.

    2013-01-01

    Semiconducting thin films of tin selenide (SnSe) were chemically synthesized at room temperature by varying two different pH. X-ray diffraction data revealed that the crystallinity of SnSe films prepared at pH 11.0 slightly increased. XRD patterns of SnSe showed polycrystalline nature. The optical properties of the films were studied in the wavelength range of 0.36-1.10 μm. Optical absorption studies show that the pH has no effect on the band gap energy of the grown SnSe films; hence, the band gap remains the same as pH increases from 10.0 to 11.0. (authors)

  20. Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

    Directory of Open Access Journals (Sweden)

    M. Marikkannan

    2015-01-01

    Full Text Available Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar, oxygen (O2, hydrogen (H2 and nitrogen (N2 to enhance the electrical and optical performances of indium tin oxide (ITO films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD, atomic force microscopy (AFM, scanning electron microscopy (SEM, Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□ and increased optical transmittance (69% than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO

  1. Ultrashort pulse laser deposition of thin films

    Science.gov (United States)

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  2. Electrostatic spray deposition of doped ceria films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, J.B.; Chang, C.L.; Hwang, B.H. [Department of Materials Science and Optoelectronics Engineering, National Sun Yat-Sen University, Kaohsiung 80424 (China); Hsu, C.S. [Kaohsiung Municipal Chung-Cheng Industrial High School, Kaohsiung 80656 (China)

    2010-12-15

    Dense and thin electrolyte films are desirable for solid oxide fuel cells (SOFCs) because of their low gas leakage and low ohmic resistances. This work aims at the preparation of thin dense Gd-doped ceria (CGO) electrolyte films using a cost-effective deposition method in ambient atmosphere-electrostatic spray deposition (ESD). The deposition parameters such as deposition temperature, concentration and flow rate of precursor solution were changed systematically to examine their effects on film morphology and hence electrochemical performance. While the film morphology was examined by a scanning electron microscope, the electrochemical performance was revealed by measuring open circuit voltages (OCVs) of NiO-CGO/CGO/Ba{sub 0.5}Sr{sub 0.5}Co{sub 0.8}Fe{sub 0.2}O{sub 3-{delta}} (BSCF) cells in 500-700 C with humidified hydrogen as fuel and air as oxidant. The results show that a CGO film of 25 {mu}m thick obtained at a deposition temperature of 400 C, a precursor solution flow rate of 6 ml h{sup -1} and a precursor concentration of 0.3 M was dense with very few isolated pores and the OCV of the associated cell was 0.915 V at 500 C. This implies that the CGO film has negligible gas leakage and ESD is a promising method for preparing thin dense electrolyte films for SOFCs. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenzhi, E-mail: zhangwz@xatu.edu.cn [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Hu, Chenglong [Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, School of Chemistry and Environmental Engineering, Jianghan University, Wuhan 430056 (China)

    2016-03-30

    Graphical abstract: A chemical bonding approach was proposed to prepare the PANI film covalently bonded to ITO substrate and the film exhibited high electrochemical activities and stability compared with that obtained by conventional film-forming approach. - Highlights: • The PANI film covalently bonded to ITO substrate was prepared using ABPA as modifier. • The oxidative potentials of the obtained PANI film were decreased. • The obtained PANI film exhibits high electrochemical activities and stability. - Abstract: Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV–vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C{sub 4}H{sub 9}){sub 4}N{sup +} under the positive and negative potentials as comparison with the small Li{sup +} ion.

  4. Study on Optoelectronic Characteristics of Sn-Doped ZnO Thin Films on Poly(ethylene terephthalate) and Indium Tin Oxide/Poly(ethylene terephthalate) Flexible Substrates

    Science.gov (United States)

    Cheng, Chi-Hwa; Chen, Mi; Chiou, Chin-Lung; Liu, Xing-Yang; Weng, Lin-Song; Koo, Horng-Show

    2013-05-01

    Transparent conductive oxides of Sn-doped ZnO (SZO) films with doping weight ratios of 2.0, 3.0, 4.0, and 5.0 wt % have been deposited on indium tin oxide (ITO)/poly(ethylene terephthalate) (PET) and PET flexible substrates at room temperature by pulsed laser deposition (PLD). Resultant films of SZO on ITO/PET and PET flexible substrates are amorphous in phase. It is found that undoped and SZO films on ITO/PET is anomalously better than films on PET in optical transmittance in the range of longer wavelength, possibly due to the refraction index difference between SZO, ITO films, and PET substrates, Burstein-Moss effect and optical interference of SZO/ITO bilayer films and substrate materials, and furthermore resulting in the decrement of reflection. The lowest electrical resistivity (ρ) of 4.0 wt % SZO films on flexible substrates of PET and ITO/PET are 3.8×10-2 and ρ= 1.2×10-2 Ω.cm, respectively. It is found that electrical and optical properties of the resultant films are greatly dependent on various amount of Sn element doping effect and substrate material characteristics.

  5. Deposition of thin films and surface modification by pulsed high energy density plasma

    International Nuclear Information System (INIS)

    Yan Pengxun; Yang Size

    2002-01-01

    The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition. The authors present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma. The basic physics of the pulsed plasma-material interaction has been investigated. Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10-100 eV, density of 10 14 -10 16 cm -3 , translation velocity of ∼10 -7 cm/s and power density of ∼10 4 W/cm 2 . Its use in material surface treatment combines the effects of laser surface treatment, electron beam treatment, shock wave bombardment, ion implantation, sputtering deposition and chemical vapor deposition. The metastable phase and other kinds of compounds can be produced on low temperature substrates. For thin film deposition, a high deposition ratio and strong film to substrate adhesion can be achieved. The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated. Thin film c-BN, Ti(CN), TiN, DLC and AlN materials have been produced successfully on various substrates at room temperature. A wide interface layer exists between film and substrate, resulting in strong adhesion. Metal surface properties can be improved greatly by using this kind of treatment

  6. Effect of Deposition Time on Physical Properties of Nanocrystallized SnS Zinc Blend Thin Films Grown by Chemical Bath Deposition

    International Nuclear Information System (INIS)

    Akkari, A.; Regima, M.; Kamoun Turki, N.; Guasch, C.

    2011-01-01

    Zinc blend tin sulphide thin films have been successfully prepared on Pyrex substrates using low cost chemical bath deposition technique. In this work, we study the effect of time deposition on the physical properties of SnS thin film. A 200 nm thick layer is obtained as an optimum value for deposition time td equal to four hours. X-Ray diffraction study shows that SnS exhibits a zinc blend structure with preferential orientations (111)-ZB and (200)-ZB. Optical analyses by means of transmission T(λ) and reflection R(λ) measurements allow to determine the direct band gap energy value ∼1.7 eV. Thin layers of tin sulphide exhibit a high absorption coefficient up to 1.5x106 cm-1 in the visible domain, indicating that SnS compound has absorbing properties favorable for applications in solar cell devices.(authors)

  7. Reactive Pulsed Laser Deposition of titanium nitride thin film: Optimization of process parameters using Secondary Ion Mass Spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, R., E-mail: krish@igcar.gov.in [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamil Nadu (India); Mathews, Tom; Balamurugan, A.K.; Dash, S.; Tyagi, A.K.; Raj, Baldev [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamil Nadu (India); Jayaram, Vikram [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India)

    2010-03-01

    Reactive Pulsed Laser Deposition is a single step process wherein the ablated elemental metal reacts with a low pressure ambient gas to form a compound. We report here a Secondary Ion Mass Spectrometry based analytical methodology to conduct minimum number of experiments to arrive at optimal process parameters to obtain high quality TiN thin film. Quality of these films was confirmed by electron microscopic analysis. This methodology can be extended for optimization of other process parameters and materials.

  8. Thin film formation at the air–water interface and on solid substrates of soluble axial substituted cis-bis-decanoate tin phthalocyanine

    International Nuclear Information System (INIS)

    Campos-Terán, José; Garza, Cristina; Beltrán, Hiram I.; Castillo, Rolando

    2012-01-01

    Herein we study thin films of a recent kind of soluble axial substituted cis-bis-decanoate-tin IV phthalocyanine (PcSn10) at the air/water interface, which were compressed isothermally and observed with Brewster Angle Microscopy. The air/water interfacial behavior of the films suggests that there are strong interactions among the PcSn10 molecules, which produces multilayers and 3D self-assemblies that prevent the formation of a Langmuir monolayer. Langmuir–Blodgett deposits of these films on both mica (negatively charged) and mild steel (positively charged) surfaces were developed. Information about the morphology of the film was obtained by using atomic force microscopy. We found structural differences in the PcSn10 thin films deposited on both substrates, suggesting that a combination of π–π, σ–π and Van der Waals interactions are the leading factors for the deposition, and consequently, for the control of supramolecular order. Our findings provide insights in the design of phthalocyanine molecules for the development of highly ordered and reproducible thin films.

  9. Nanosecond laser ablation and deposition of silver, copper, zinc and tin

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo; Ettlinger, Rebecca Bolt; Canulescu, Stela

    2014-01-01

    Nanosecond pulsed laser deposition of different metals (Ag, Cu, Sn, Zn) has been studied in high vacuum at a laser wavelength of 355 nm and pulse length of 6 ns. The deposition rate is roughly similar for Sn, Cu and Ag, which have comparable cohesive energies, and much higher for the deposition...... of Zn which has a low cohesive energy. The deposition rate for all metals is strongly correlated with the total ablation yield, i.e., the total mass ablated per pulse, reported in the literature except for Sn, for which the deposition rate is low, but the total ablation yield is high. This may...... be explained by the continuous erosion by nanoparticles during deposition of the Sn films which appear to have a much rougher surface than those of the other metals studied in the present work....

  10. F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

    International Nuclear Information System (INIS)

    Xu, M.Y.; Li, J.; Herman, P.R.; Lilge, L.D.

    2006-01-01

    This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F 2 laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm 2 to an optimized single pulse fluence of 4.5 J/cm 2 for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F 2 laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. (orig.)

  11. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    International Nuclear Information System (INIS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-01-01

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window

  12. The impact of sodium contamination in tin sulfide thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Vera Steinmann

    2016-02-01

    Full Text Available Through empirical observations, sodium (Na has been identified as a benign contaminant in some thin-film solar cells. Here, we intentionally contaminate thermally evaporated tin sulfide (SnS thin-films with sodium and measure the SnS absorber properties and solar cell characteristics. The carrier concentration increases from 2 × 1016 cm−3 to 4.3 × 1017 cm−3 in Na-doped SnS thin-films, when using a 13 nm NaCl seed layer, which is detrimental for SnS photovoltaic applications but could make Na-doped SnS an attractive candidate in thermoelectrics. The observed trend in carrier concentration is in good agreement with density functional theory calculations, which predict an acceptor-type NaSn defect with low formation energy.

  13. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    Energy Technology Data Exchange (ETDEWEB)

    Ong, Hui-Yng [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Engineering, Nanyang Polytechnic, Singapore 569830 (Singapore); Shrestha, Milan; Lau, Gih-Keong, E-mail: mgklau@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  14. Organosilane-functionalization of nanostructured indium tin oxide films.

    Science.gov (United States)

    Pruna, R; Palacio, F; Martínez, M; Blázquez, O; Hernández, S; Garrido, B; López, M

    2016-12-06

    Fabrication and organosilane-functionalization and characterization of nanostructured ITO electrodes are reported. Nanostructured ITO electrodes were obtained by electron beam evaporation, and a subsequent annealing treatment was selectively performed to modify their crystalline state. An increase in geometrical surface area in comparison with thin-film electrodes area was observed by atomic force microscopy, implying higher electroactive surface area for nanostructured ITO electrodes and thus higher detection levels. To investigate the increase in detectability, chemical organosilane-functionalization of nanostructured ITO electrodes was performed. The formation of 3-glycidoxypropyltrimethoxysilane (GOPTS) layers was detected by X-ray photoelectron spectroscopy. As an indirect method to confirm the presence of organosilane molecules on the ITO substrates, cyclic voltammetry and electrochemical impedance spectroscopy (EIS) were also carried out. Cyclic voltammograms of functionalized ITO electrodes presented lower reduction-oxidation peak currents compared with non-functionalized ITO electrodes. These results demonstrate the presence of the epoxysilane coating on the ITO surface. EIS showed that organosilane-functionalized electrodes present higher polarization resistance, acting as an electronic barrier for the electron transfer between the conductive solution and the ITO electrode. The results of these electrochemical measurements, together with the significant difference in the X-ray spectra between bare ITO and organosilane-functionalized ITO substrates, may point to a new exploitable oxide-based nanostructured material for biosensing applications. As a first step towards sensing, rapid functionalization of such substrates and their application to electrochemical analysis is tested in this work. Interestingly, oxide-based materials are highly integrable with the silicon chip technology, which would permit the easy adaptation of such sensors into lab

  15. The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

    Directory of Open Access Journals (Sweden)

    Shih-Hao Chan

    2015-01-01

    Full Text Available This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications.

  16. Transparent thin films of indium tin oxide: Morphology-optical investigations, inter dependence analyzes

    Science.gov (United States)

    Prepelita, P.; Filipescu, M.; Stavarache, I.; Garoi, F.; Craciun, D.

    2017-12-01

    Using a fast and eco-friendly deposition method, ITO thin films with different thicknesses (0.5 μm-0.7 μm) were deposited on glass substrates by radio frequency magnetron sputtering technique. A comparative analysis of these oxide films was then carried out. AFM investigations showed that the deposited films were smooth, uniform and having a surface roughness smaller than 10 nm. X-ray diffraction investigations showed that all samples were polycrystalline and the grain sizes of the films, corresponding to (222) cubic reflection, were found to increase with the increasing film thickness. The optical properties, evaluated by UV-VIS-NIR (190-3000 nm) spectrophotometer, evidenced that the obtained thin films were highly transparent, with a transmission coefficient between 90 and 96%, depending on the film thickness. Various methods (Swanepoel and Drude) were employed to appreciate the optimal behaviour of transparent oxide films, in determining the dielectric optical parameters and refractive index dispersion for ITO films exhibiting interference patterns in the optical transmission spectra. The electrical conductivity also increased as the film thickness increased.

  17. Electronic structures and excitonic transitions in nanocrystalline iron-doped tin dioxide diluted magnetic semiconductor films: an optical spectroscopic study.

    Science.gov (United States)

    Yu, Wenlei; Jiang, Kai; Wu, Jiada; Gan, Jie; Zhu, Min; Hu, Zhigao; Chu, Junhao

    2011-04-07

    Nanocrystalline iron-doped tin dioxide (Sn(1-x)Fe(x)O(2)) films with x from 0 to 0.2 were prepared on c-sapphire substrates by pulsed laser deposition. X-ray diffraction and Raman scattering analysis show that the films are of the rutile structure at low compositions and an impurity phase related to Fe(2)O(3) appears until the x is up to 0.2, suggesting the general change of lattice structure due to the Fe ion substitution. The dielectric functions are successfully determined from 0.0248 to 6.5 eV using the Lorentz multi-oscillator and Tauc-Lorentz dispersion models in the low and high photon energy regions, respectively. With increasing Fe composition, the highest-frequency transverse optical phonons E(u) shifts towards a lower energy side and can be well described by (608 - 178x) cm(-1). From the transmittance spectra, the fundamental absorption edge is found to be decreased with the Fe composition due to the joint contributions from SnO(2) and Fe(2)O(3). It can be observed that the doped films exhibit evident excitonic excitation features, which are strongly related to the Fe doping. Among them, the 6A(1g)→ 4T(2g) transition contributes to the onset of optical absorption. Moreover, the remarkable intensity reduction and a red-shift trend with the doping composition, except for the pure film, can be testified by the photoluminescence spectra. It can be concluded that the replacement of Sn with the Fe ion could induce the 2p-3d hybridization and result in the electronic band structure modification of the Sn(1-x)Fe(x)O(2) films.

  18. Alcohol sensing of tin oxide thin film prepared by sol–gel process

    Indian Academy of Sciences (India)

    Unknown

    Abstract. The present paper describes the alcohol sensing characteristics of spin coated SnO2 thin film deposited by using sol–gel process. The sensitivity of the film was measured at different temperatures and different concentrations of alcohol at ppm level. Alcohol detection result shows peak sensitivity at 623 K. The.

  19. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-09-02

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

  20. Room Temperature Detection of Benzene Vapours by Tin Oxide Nano Clusters

    Directory of Open Access Journals (Sweden)

    J. N. PANCHAL

    2015-07-01

    Full Text Available Thin films of tin oxide with nano clusters were deposited using Chemical Vapour Transport technique. The annealed films were used as sensor to detect benzene vapours at room temperature. The response was studied for the concentration range 300-1000 ppm. A comparative study of the response of the nano clustered films to benzene vapours in this range with the response of thin films of Indium tin oxide and tin oxide deposited by the physical vapour deposition method was taken up.

  1. Plasmon polaritons in the near infrared on fluorine doped tin oxide films.

    Science.gov (United States)

    Dominici, Lorenzo; Michelotti, Francesco; Brown, Thomas M; Reale, Andrea; Di Carlo, Aldo

    2009-06-08

    Here we investigate plasmon polaritons in fluorine doped tin oxide (FTO) films. By fitting reflectance and transmittance measurements as a function of wavelength lambda epsilon [1.0microm, 2.5microm] we derive a Drude dispersion relation of the free electrons in the transparent conducting oxide films. Then we compute the dispersion curves for the bulk and surface modes together with a reflectance map over an extended wavelength region (lambda==>10microm). Although the surface polariton dispersion for a single FTO/air interface when neglecting damping should appear clearly in the plots in the considered region (since it is supposedly far and isolated from other resonances), a complex behaviour can arise. This is due to different characteristic parameters, such as the presence of a finite extinction coefficient, causing an enlargement and backbending of the feature, and the low film thickness, via coupling between the modes from both the glass/FTO and FTO/air interfaces. Taking into account these effects, computations reveal a general behaviour for thin and absorbing conducting films. They predict a thickness dependent transition region between the bulk polariton and the surface plasmon branches as previously reported for indium tin oxide. Finally, attenuated total reflection measurements vs the incidence angle are performed over single wavelengths lines R(theta) (lambda= 0.633,0.830,1.300,1.550microm) and over a two dimensional domain R(theta,lambda) in the near infrared region lambda epsilon [1.45microm, 1.59microm]. Both of these functions exhibit a feature which is attributed to a bulk polariton and not to a surface plasmon polariton on the basis of comparison with spectrophotometer measurements and modeling. The predicted range for the emergence of a surface plasmon polariton is found to be above lambda >or= 2.1microm, while the optimal film thickness for its observation is estimated to be around 200nm.

  2. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  3. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  4. Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xue Zhang

    2017-12-01

    Full Text Available We investigated the effects of gallium (Ga and tin (Sn compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs. The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide and 0.30 (Sn oxide to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0:Sn(0.9 oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance.

  5. Surface vertical deposition for gold nanoparticle film

    International Nuclear Information System (INIS)

    Diao, J J; Qiu, F S; Chen, G D; Reeves, M E

    2003-01-01

    In this rapid communication, we present the surface vertical deposition (SVD) method to synthesize the gold nanoparticle films. Under conditions where the surface of the gold nanoparticle suspension descends slowly by evaporation, the gold nanoparticles in the solid-liquid-gas junction of the suspension aggregate together on the substrate by the force of solid and liquid interface. When the surface properties of the substrate and colloidal nanoparticle suspension define for the SVD, the density of gold nanoparticles in the thin film made by SVD only depends on the descending velocity of the suspension surface and on the concentration of the gold nanoparticle suspension. (rapid communication)

  6. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  7. ITO films with enhanced electrical properties deposited on unheated ZnO-coated polymer substrates

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Alves, H.; Goncalves, A.; Varela, J.; Nascimento, R.; Amaral, A.

    2005-01-01

    Indium tin oxide (ITO) films were deposited by radio frequency (rf)-plasma enhanced reactive thermal evaporation (rf-PERTE) at room temperature on intrinsic ZnO/polymer substrates to enhance their electrical and structural properties. The polymer substrate used is polyethylene terephthalate (PET). The thickness of the ZnO films varied in the range 50-150 nm. The average thickness of the ITO films is of about 170 nm. Results show that ITO deposited on bare PET substrates exhibit: an average visible transmittance of about 85% and an electrical resistivity of 5.6 x 10 -2 Ω cm. ITO on ZnO/PET substrates show the optical quality practically preserved and the resistivity decreased to a minimum value of 1.9x10 -3 Ω cm for ZnO layers 125 nm thick. The electrical properties of ITO on ZnO/PET are largely improved by the increase in carrier mobility

  8. Organic photovoltaics using thin gold film as an alternative anode to indium tin oxide

    International Nuclear Information System (INIS)

    Haldar, Amrita; Yambem, Soniya D.; Liao, Kang-Shyang; Alley, Nigel J.; Dillon, Eoghan P.; Barron, Andrew R.; Curran, Seamus A.

    2011-01-01

    Indium Tin Oxide (ITO) is the most commonly used anode as a transparent electrode and more recently as an anode for organic photovoltaics (OPVs). However, there are significant drawbacks in using ITO which include high material costs, mechanical instability including brittleness and poor electrical properties which limit its use in low-cost flexible devices. We present initial results of poly(3-hexylthiophene): phenyl-C 61 -butyric acid methyl ester OPVs showing that an efficiency of 1.9% (short-circuit current 7.01 mA/cm 2 , open-circuit voltage 0.55 V, fill factor 0.49) can be attained using an ultra thin film of gold coated glass as the device anode. The initial I-V characteristics demonstrate that using high work function metals when the thin film is kept ultra thin can be used as a replacement to ITO due to their greater stability and better morphological control.

  9. Multi objective optimization of wear resistant TiAlN and TiN coatings deposite by PVD techniques

    OpenAIRE

    A. Zarychta; J. Ratajski; Ł. Szparaga

    2011-01-01

    Purpose: The goal of this paper is to determine, the optimal layer thickness of deposited coatings, in respect of thermal strain and stresses.Design/methodology/approach: For physical modelling purposes Cr, TiN and TiAlN layers were treated as a continuous medium, so the physical phenomena, occurring in the coating, are modelled based on a classical theory of stiffness. Computer model of the object (coating + substrate) describing strains and thermal stresses states in layers, after deposit...

  10. Influence of substrates on the structural and optical properties of ammonia-free chemically deposited CdS films

    International Nuclear Information System (INIS)

    Cao, M.; Li, L.; Zhang, B.L.; Huang, J.; Tang, K.; Cao, H.; Sun, Y.; Shen, Y.

    2012-01-01

    Highlights: ► CdS thin films were deposited on different substrate. ► We characterized the structure and morphology of deposited CdS thin films. ► The band gaps of CdS thin films were determined from the absorption spectra. - Abstract: CdS films were deposited on glass, indium-tin-oxide (ITO)/glass and Ti foil substrates by acidic chemical bath deposition technique. Effects of substrate type on the structural and optical properties of CdS films were studied. XRD patterns indicated that the structures of CdS films on ITO/glass and Ti foil were predominantly hexagonal and the structure of CdS films on glass was a mixed cubic and hexagonal. Atomic force microscope (AFM) analysis showed that the surface of CdS films on Ti foil substrate was rougher than that of CdS films on glass and ITO/glass substrates. The average transmittances of CdS films on glass and ITO/glass were about 71% and 75%, respectively. Diffuse reflection spectra also indicated the high transmittance of CdS films on Ti foil in the longer wavelength region, but PL and Raman spectra implied that more defects existed in CdS films on Ti foil substrate.

  11. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  12. Electrochromic properties of bipolar pulsed magnetron sputter deposited tungsten–molybdenum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tai-Nan [Chemical Engineering Division, Institute of Nuclear Energy Research, Taoyuan 325, Taiwan, ROC (China); Lin, Yi Han; Lee, Chin Tan [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China); Han, Sheng [Center of General Education, National Taichung Institute of Technology, Taichung 404, Taiwan, ROC (China); Weng, Ko-Wei, E-mail: kowei@nqu.edu.tw [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China)

    2015-06-01

    There are great interests in electrochromic technology for smart windows and displays over past decades. In this study, the WMoO{sub x} thin films were deposited onto indium tin oxide glass and silicon substrates by pulsed magnetron sputter system with W and Mo targets. The films were deposited with fixed W target power while the variant parameter of Mo target power in the range 50, 100, 150 and 200 W was investigated. The working pressure was fixed at 1.33 Pa with a gas mixture of Ar (30 sccm) and O{sub 2} (15 sccm). The film thickness increased with the Mo target power. Higher plasma power resulted in a crystalline structure which would reduce the electrochromic property of the film. The influence of plasma powers applied to Mo target on the structural, optical and electrochromic properties of the WMoO{sub x} thin films has been investigated. WMoO{sub x} films grown at Mo target powers less than 100 W were found to be amorphous. The films deposited at 150 W, which is the optimal fabrication condition, exhibit better electrochromic properties with high optical modulation, high coloration efficiency and less color memory effect at wavelength 400, 550 and 800 nm. The improvement resulted from the effect of doping Mo has been tested. The maximum ΔT (%) values are 36.6% at 400 nm, 65.6% at 550 nm, and 66.6% at 800 nm for pure WO{sub 3} film. The addition of Mo content in the WMoO{sub x} films provides better resistance to the short wavelength light source and can be used in the concerned application. - Highlights: • WMoO{sub x} films are deposited by pulsed magnetron sputter with pure W and Mo targets. • Mo addition in WMoO{sub x} provides better resistance to short wavelength light source. • WMoO{sub x} films exhibit electrochemical stability in the cycling test.

  13. Substrate heater for thin film deposition

    Science.gov (United States)

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  14. Deposition of biopolymer films on micromechanical sensors

    DEFF Research Database (Denmark)

    Keller, Stephan Sylvest; Gammelgaard, Lene; Jensen, Marie P.

    2011-01-01

    The influence of various parameters on the spray-coating of thin films of poly(l-lactide) (PLLA) was investigated. The optimized processing conditions were used for deposition of the biodegradable polymer on arrays of SU-8 microcantilevers. The resonance frequency of the cantilevers before and af...... and after spray-coating was measured which allowed the characterization of the mechanical properties of the coatings. Initial experiments on enzymatic degradation of the PLLA were performed.......The influence of various parameters on the spray-coating of thin films of poly(l-lactide) (PLLA) was investigated. The optimized processing conditions were used for deposition of the biodegradable polymer on arrays of SU-8 microcantilevers. The resonance frequency of the cantilevers before...

  15. Device quality InO{sub x}:Sn and InO{sub x} thin films deposited at room temperature with different rf-power densities

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, A., E-mail: ana.de.amaral@ist.utl.pt [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Brogueira, P. [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Conde, O. [Universidade de Lisboa, Dept. de Fisica and ICEMS, Campo Grande, 1749-016 Lisboa (Portugal); Lavareda, G. [Dept. de Ciencia dos Materiais and CTS, FCT-UNL, 2829-516 Caparica (Portugal); Nunes de Carvalho, C. [Dept. de Ciencia dos Materiais, FCT-UNL and ICEMS, 2829-516 Caparica (Portugal)

    2012-12-30

    The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm{sup 2} and 58.6 mW/cm{sup 2} as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5 Multiplication-Sign 10{sup -4} {Omega}{center_dot}cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm{sup 2} from a 5% Sn alloy or at 19.5 mW/cm{sup 2} from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: Black-Right-Pointing-Pointer InO{sub x}:Sn and InO{sub x} thin films were deposited at room temperature. Black-Right-Pointing-Pointer Transparency and electrical resistivity are relatively independent of Sn content. Black-Right-Pointing-Pointer Device quality material was obtained. Black-Right-Pointing-Pointer The surface morphology homogeneity of the films varies with tin content.

  16. Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

    International Nuclear Information System (INIS)

    Amaral, A.; Brogueira, P.; Conde, O.; Lavareda, G.; Nunes de Carvalho, C.

    2012-01-01

    The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95–80) % In:(5–20) % Sn alloys as evaporation sources and 19.5 mW/cm 2 and 58.6 mW/cm 2 as rf-power densities. The two most important macroscopic properties – visible transparency and electrical resistivity – are relatively independent of tin content (0–20%). Visible transmittance of about 75% and electrical resistivity around 5 × 10 −4 Ω·cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm 2 from a 5% Sn alloy or at 19.5 mW/cm 2 from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: ► InO x :Sn and InO x thin films were deposited at room temperature. ► Transparency and electrical resistivity are relatively independent of Sn content. ► Device quality material was obtained. ► The surface morphology homogeneity of the films varies with tin content.

  17. Effect of active screen plasma nitriding pretreatment on wear behavior of TiN coating deposited by PACVD technique

    Energy Technology Data Exchange (ETDEWEB)

    Raoufi, M., E-mail: raoufi@iust.ac.ir [School of Metallurgical Engineering, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Mirdamadi, Sh. [School of Metallurgical Engineering, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Mahboubi, F. [Department of Mining and Metallurgical Engineering, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Ahangarani, Sh. [Advanced Materials and Renewable Energies Dep., Iranian Research Organization for Science and Technology (Iran, Islamic Republic of); Mahdipoor, M.S. [Department of Mining and Metallurgical Engineering, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Elmkhah, H. [Department of Metallurgical Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of)

    2012-08-01

    Titanium based alloys are used extensively for improving wear properties of different parts due to their high hardness contents. Titanium nitride (TiN) is among these coatings which can be deposited on surface using various techniques such as CVD, PVD and PACVD. Their weak interface with substrate is one major drawback which can increase the total wear in spite of favorite wear behavior of TiN. Disc shaped samples from AISI H13 (DIN 1.2344) steel were prepared in this study. Single TiN coating was deposited on some of them while others have experienced a TiN deposition by active screen plasma nitriding (ASPN). Hardness at the surface and depth of samples was measured through Vickers micro hardness test which revealed 1810 Hv hardness as the maximum values for a dual-layered ASPN-TiN. Pin-on-disc wear test was done in order to study the wear mechanism. In this regard, the wear behavior of samples was investigated against pins from 100Cr6 (Din 1.3505) bearing steel and tungsten carbide-cobalt (WC-Co) steel. It was evidenced that the dual-layer ASPN-TiN coating has shown the least weight loss with the best wearing behavior because of its high hardness values, stable interface and acceptable resistance against peeling during wearing period.

  18. Deposition of tin oxide doped with fluorine produced by sol-gel method and deposited by spray-pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Maia, Paulo Herbert Franca; Lima, Francisco Marcone; Sena, Aline Cosmo de; Silva, Alvaro Neuton; Almeida, Ana Fabiola Leite de; Freire, Francisco Nivaldo Aguiar, E-mail: phfmj@yahoo.com.br, E-mail: marconeufc@gmail.com, E-mail: alinedesena@yahoo.com.br, E-mail: alvaro_neutron@hotmail.com, E-mail: anfaleal@yahoo.com.br, E-mail: nivaldo@ufc.br [Universidade Federal do Ceara (UFCE), CE (Brazil)

    2014-07-01

    Solar energy is one of the most important sources of renewable energy today, but its production is based on silicon cells, expensive and difficult to produce, so the research seek new materials to replace them. This work aims to deposit tin oxide doped with fluorine on the glass substrate using the sol-gel method to provide a working solution and spray pyrolysis technique to perform the deposition. F-SnO2 (FTO) were synthesized by sol-gel method, employing NH{sub 4}F and SnCl{sub 2} precursor in an ethanol solution. Before the formation of the gel phase, the entire solution was sprayed, with the aid of a pistol aerographic substrate under heated at 600 °C divided by 50 applications and cooled in the furnace. The substrates had resistances between 10 and 30 S.cm. The energy dispersive x-ray (EDS) revealed the presence of fluorine in the SnO{sub 2} network. (author)

  19. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro, E-mail: takeuchi@umd.edu [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740 (United States); Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740 (United States)

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  20. Speculations Linking Monazite Compositions to Origin: Llallagua Tin Ore Deposit (Bolivia

    Directory of Open Access Journals (Sweden)

    Elizabeth J. Catlos

    2017-07-01

    Full Text Available Monazite [(Ce,ThPO4] from the Llallagua tin ore deposit in Bolivia is characterized by low radiogenic element contents. Previously reported field evidence and mineral associations suggest the mineral formed via direct precipitation from hydrothermal fluids. Monazite compositions thus may provide insight into characteristics of the fluids from which it formed. Chemical compositions of three Llallagua monazite grains were obtained using Electron Probe Microanalysis (EPMA, n = 64] and laser ablation mass spectrometer (LA-ICP-MS, n = 56. The mineral has higher amounts of U (123 ± 17 ppm than Th (39 ± 20 ppm (LA-ICP-MS, ±1σ. Grains have the highest amounts of fluorine ever reported for monazite (0.88 ± 0.10 wt %, EPMA, ±1σ, and F-rich fluids are effective mobilizers of rare earth elements (REEs, Y, and Th. The monazite has high Eu contents and positive Eu anomalies, consistent with formation in a highly-reducing back-arc environment. We speculate that F, Ca, Si and REE may have been supplied via dissolution of pre-existing fluorapatite. Llallagua monazite oscillatory zoning is controlled by an interplay of low (P + Ca + Si + Y and high atomic number (REE elements. We suggest monazite compositions provide insight into fluid geochemistry, mineral reactions, and tectonic settings of ore deposits that contain the mineral.

  1. Ion-assisted deposition of thin films

    International Nuclear Information System (INIS)

    Barnett, S.A.; Choi, C.H.; Kaspi, R.; Millunchick, J.M.

    1993-01-01

    Recent work on low-energy ion-assisted deposition of epitaxial films is reviewed. Much of the recent interest in this area has been centered on the use of very low ion energies (∼ 25 eV) and high fluxes (> 1 ion per deposited atom) obtained using novel ion-assisted deposition techniques. These methods have been applied in ultra-high vacuum, allowing the preparation of high-purity device-quality semiconductor materials. The following ion-surface interaction effects during epitaxy are discussed: improvements in crystalline perfection during low temperature epitaxy, ion damage, improved homogeneity and properties in III-V alloys grown within miscibility gaps, and changes in nucleation mechanism during heteroepitaxial growth

  2. OPTIMISATION OF SPRAY DEPOSITED Sno2 THIN FILM FOR ...

    African Journals Online (AJOL)

    Dr Obe

    1987-09-01

    Sep 1, 1987 ... Department of Physics and Astronomy University of Nigeria, Nsukka. (Manuscript received December 1986 and in revised form July 1987). ABSTRACT. The use of conducting tin-oxide (SnO2 ) films for fabrication of solar cell is becoming increasingly important because of reasonably high efficiency and ...

  3. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

  4. Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

    International Nuclear Information System (INIS)

    Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

    2015-01-01

    Graphical abstract: The best SnO 2 :N TCO film: about 80% transmittance and 9.1 × 10 −4 Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO 2 :N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10 −4 Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm

  5. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  6. Rapid Fabrication of Low-Density Porous Tin Monolith via Hydrogen Bulb Dynamics Templates

    Science.gov (United States)

    Ren, Hongbo; Zhu, Jiayi; Bi, Yutie; Xu, Yewei; Zhang, Lin; Wang, Ni

    Low-density porous tin monolith with the pteridophyta leaf-like structure was fast fabricated by a facile route via the electrochemical deposition process via hydrogen bulb dynamics templates within less than 1min. The samples were characterized by scanning electron microscope, X-ray diffraction and so on. The results indicated that the deposited tin porous structure could be easily controlled to form film or monolith by adjusting the tin precursor concentration and surfactant content.

  7. Stress in and texture of PVD deposited metal nitride films

    NARCIS (Netherlands)

    Machunze, R.

    2010-01-01

    Thin metal nitride films deposited by Physical Vapor Deposition (PVD) are used amongst many other applications as wear protective coatings in tool industry or as diffusion barriers in integrated circuit technology. Typically these films exhibit a residual in-plane stress when deposited onto rigid

  8. Sensitivity and Response of Polyvinyl Alcohol/Tin Oxide Nanocomposite Multilayer Thin Film Sensors.

    Science.gov (United States)

    Sriram, G; Dhineshbabu, N R; Nithyavathy, N; Saminathan, K; Kaler, K V I S; Rajendran, V

    2016-01-01

    Nanocrystalline Tin Oxide (SnO₂) is Non-Stoichiometric in Nature with Functional Properties Suitable for gas sensing. In this study, SnO₂nanoparticles were prepared by the sol-gel technique, which were then characterised using X-ray diffraction. The nanoparticles showed tetragonal structure with an average crystallite size of 18 nm. The stretching and vibration modes of SnO₂were confirmed using Fourier transform infrared spectroscopy. The size of SnO₂ nanoparticles was determined using particle size analyser, which was found be 60 ± 10 nm on average. The surface morphology of the nanoparticles was investigated using scanning electron microscope, which showed irregular-sized agglomerated SnO₂nanostructures. In addition, primary particle size was evaluated using high-resolution transmission electron microscopy, which was found to be 50 nm on average. The polyvinyl alcohol/SnO₂ composite thin film was prepared on a glass substrate using spin-coating method. The values of band gap energy and electrical conductance of 13-layer thin film were found to be 2.96 eV and 0.0505 mho, respectively. Sulfur dioxide (SO₂) was suitably tailored to verify the sensor response over a concentration range of 10-70 ppm at room temperature. The performance, response, and recovery time of sensors were increased by increasing the layers of the thin film.

  9. Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

    Science.gov (United States)

    Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

    2018-05-01

    The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

  10. Fractal morphological analysis of Bacteriorhodopsin (bR) layers deposited onto Indium Tin Oxide (ITO) electrodes

    International Nuclear Information System (INIS)

    Vengadesh, P.; Muniandy, S.V.; Majid, W.H. Abd.

    2009-01-01

    Uniform Bacteriorhodopsin layers for the purpose of fabricating Bacteriorhodopsin-based biosensors were prepared by allowing drying of the layers under a constant electric field. To properly observe and understand the 'electric field effect' on the protein Bacteriorhodopsin, the electric and non-electric field influenced Bacteriorhodopsin layers prepared using a manual syringe-deposition method applied onto Indium Tin Oxide electrodes were structurally investigated using Scanning Electron Microscopy and Atomic Force Microscopy. The results yield obvious morphological differences between the electric and non-electric field assisted Bacteriorhodopsin layers and brings to attention the occurrence of the so-called 'coffee-ring' effect in the latter case. We applied stochastic fractal method based on the generalized Cauchy process to describe the morphological features surrounding the void. Fractal dimension is used to characterize the local regularity of the Bacteriorhodopsin clusters and the correlation exponent is used to describe the long-range correlation between the clusters. It is found that the Bacteriorhodopsin protein tends to exhibit with strong spatial correlation in the presence of external electric field compared to in absence of the electric field. Long-range correlation in the morphological feature may be associated to the enhancement of aggregation process of Bacteriorhodopsin protein in the presence of electric field, thereby inhibiting the formation of the so-called 'coffee-ring' effect. As such, the observations discussed in this work suggest some amount of control of surface uniformity when forming layers.

  11. Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    N. M. Khusayfan

    2013-01-01

    Full Text Available ITO thin films were prepared by electron beam evaporation of ceramic ITO target. The films were subsequently annealed in air atmosphere at the temperatures 300°C and 600°C in order to improve their optical and electrical properties. The crystal structure and morphology of the films are investigated by X-ray diffraction and scanning electron microscope techniques, respectively. The films exhibited cubic structure with predominant orientation of growth along (222 direction, and the crystallite size increases by rising annealing temperature. Transparency of the films, over the visible light region, is increased by annealing temperature. The resulting increase in the carrier concentration and in the carrier mobility decreases the resistivity of the films due to annealing. The absorption coefficient of the films is calculated and analyzed. The direct allowed optical band gap for as-deposited films is determined as 3.81 eV; this value is increased to 3.88 and 4.0 eV as a result of annealing at 300°C and 600°C, respectively. The electrical sheet resistance is significantly decreased by increasing annealing temperature, whereas figure of merit is increased.

  12. Metal-semiconductor transition and negative magneto-resistance in degenerate ultrathin tin oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Bansal, Shikha; Kashyap, Subhash C.; Pandya, Dinesh K., E-mail: dkpandya@physics.iitd.ac.in

    2015-10-15

    A study of electron- and magneto-transport behavior of ultrathin SnO{sub 2} films of thickness ≤40 nm with high conductivity of 537 Ω{sup −1} cm{sup −1} deposited on glass substrate by using DC reactive sputtering has been carried out at low temperature. Hall effect measurements revealed these SnO{sub 2} films to be degenerate down to 40 K. The films with thickness >5 nm are found to undergo a metal-semiconductor transition below 140 K, and show a negative MR of ∼1.5% at a magnetic field of 0.9 T below 40 K. Both these phenomena have been ascribed to the presence of weak localization of electrons at low temperature. Electron transport behavior has been explained using quantum correction to conductivity. Estimated inelastic scattering lengths were found to be longer than the film thickness which supports two-dimensional nature of electron- and magneto-transport in these ultrathin films. - Highlights: • Ultrathin SnO{sub 2} films show a high conductivity of the order of 10{sup 2} S. • Metal to semiconductor (MS) transition occurs in all the ultrathin SnO{sub 2} films of thickness > 5 nm. • All the samples show degenerate semiconductor behavior. • A negative MR is observed below 40 K in these ultrathin films. • MS transition and negative MR have been explained using weak localization effect.

  13. Depressurization and boiling of a single magmatic fluid as a mechanism for tin-tungsten deposit formation

    OpenAIRE

    Maximilian Korges; Philipp Weis; Volker Lüders; Oscar Laurent

    2018-01-01

    Tin (Sn) and tungsten (W) mineralization are commonly associated with each other in relation to highly evolved granites, but economical ore grades are restricted to rare global occurrences and mineralization styles are highly variable, indicating different mechanisms for ore formation. The Sn-W Zinnwald deposit in the Erzgebirge (Germany and the Czech Republic) in the roof zone of a Variscan Li-F granite hosts two contrasting styles of mineralization: (1) cassiterite (Sn) in greisen bodies, a...

  14. Selective Mechanical Transfer Deposition of Langmuir Graphene Films for High-Performance Silver Nanowire Hybrid Electrodes.

    Science.gov (United States)

    Large, Matthew J; Ogilvie, Sean P; Alomairy, Sultan; Vöckerodt, Terence; Myles, David; Cann, Maria; Chan, Helios; Jurewicz, Izabela; King, Alice A K; Dalton, Alan B

    2017-10-31

    In this work, we present silver nanowire hybrid electrodes prepared through the addition of small quantities of pristine graphene by mechanical transfer deposition from surface-assembled Langmuir films. This technique is a fast, efficient, and facile method for modifying the optoelectronic performance of AgNW films. We demonstrate that it is possible to use this technique to perform two-step device production by selective patterning of the stamp used, leading to controlled variation in the local sheet resistance across a device. This is particularly attractive for producing extremely low cost sensors on arbitrarily large scales. Our aim is to address some of the concerns surrounding the use of AgNW films as replacements for indium tin oxide (ITO), namely, the use of scarce materials and poor stability of AgNWs against flexural and environmental degradation.

  15. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

    2015-02-15

    Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

  16. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    International Nuclear Information System (INIS)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

    2012-01-01

    Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  17. ITO films deposited by rf-PERTE on unheated polymer substrates--properties dependence on In-Sn alloy composition

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Vilarinho, P.; Amaral, A.

    2004-01-01

    The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20 wt.%. The average thickness of the ITO films is of about 90 nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: an average visible transmittance of 80% and an electrical resistivity of 1.6x10 -3 Ω cm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6x10 -4 Ω cm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility

  18. A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

    Science.gov (United States)

    Yahia, I. S.; Jilani, Asim; Abutalib, M. M.; AlFaify, S.; Shkir, M.; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; El-Naggar, A. M.

    2016-06-01

    The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ(1), nonlinear optical susceptibility χ(3), nonlinear refractive index (n2) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

  19. A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

    Energy Technology Data Exchange (ETDEWEB)

    Yahia, I.S. [Nano-Science & Semiconductor Labs, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); Abutalib, M.M. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); AlFaify, S. [Nano-Science & Semiconductor Labs, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Shkir, M. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel-wahab, M.Sh.; Al-Ghamdi, Attieh A. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); El-Naggar, A.M. [Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Department, College of Science, King Saud University, P.O.Box 2455, Riyadh 11451 (Saudi Arabia)

    2016-06-01

    The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ{sup (1)}, nonlinear optical susceptibility χ{sup (3)}, nonlinear refractive index (n{sub 2}) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

  20. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  1. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  2. A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

    International Nuclear Information System (INIS)

    Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

    2010-01-01

    This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

  3. Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

    Science.gov (United States)

    Park, Jinhee; Rim, You Seung; Li, Chao; Wu, Jiechen; Goorsky, Mark; Streit, Dwight

    2018-04-01

    We report the device performance and stability of sputtered amorphous indium-tin-zinc-oxide (ITZO) thin-film transistors as a function of oxygen ratio [O2/(Ar + O2)] during growth. Increasing the oxygen ratio enhanced the incorporation of oxygen during ITZO film growth and reduced the concentration of deep-level defects associated with oxygen vacancies. Under illumination with no bias stress, device stability and persistent photocurrent were improved with increased oxygen ratio. Bias stress tests of the devices were also performed with and without illumination. While high oxygen ratio growth conditions resulted in decreased deep-level oxygen vacancies in the ITZO material, the same conditions resulted in degradation of the interfacial layer between the ITZO channel and dielectric due to the migration of energetic oxygen ions to the interface. Therefore, when bias stress was applied, increased carrier trap density at the interface led to a decrease in device stability that offsets any improvement in the material itself. In order to take advantage of the improved ITZO material growth at a high oxygen ratio, the interface-related problems must be solved.

  4. Reactive sputtering of TiN films at large substrate to target distances

    International Nuclear Information System (INIS)

    Musil, J.; Kadlec, S.

    1990-01-01

    This paper is a critical review of the present status of the magnetron ion sputter plating of thin CiN films. Thus different possibilities of extracting high ion currents 1 s from the magnetron discharge to substrates located not only at standard target to substrate distances d S-T of about 50 mm but also at larger distances d S-T are discussed in detail. Special attention is devoted to magnetron sputtering systems with enhanced ionization, to plasma confinement in the magnetron sputtering systems and to the discharge characteristics of an unbalanced magnetron (UM). It is shown that a UM can be operated in the regime of a double-site-sustained discharge (DSSD) and in this case large 1 s can be extracted to substrates located in large D S-T of about 200 mm and even at high pressures p = 5 Pa. A physical comparison of the conventional magnetron (CM), UM and DSSD is also given. Considerable attention is also devoted to the effect of ion bombardment on properties of TiN films created in the sputtering system using DSSD. (author)

  5. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Haanappel, V.A.C.; Gellings, P.J.; van de Vendel, D.; Metselaar, H.S.C.; van Corbach, H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical

  6. Thin-film deposition by laser ablation of dimethylpolysiloxane

    Energy Technology Data Exchange (ETDEWEB)

    Okoshi, Masayuki; Kuramatsu, Masaaki; Inoue, Narumi

    2002-09-30

    Transparent, well-insulated SiO{sub 2} thin films were deposited at room temperature by pulsed laser deposition with a dimethylpolysiloxane target. It could be asserted with confidence that the films deposited at the oxygen gas pressure of 4.4x10{sup -2} Torr were to be SiO{sub 2} by X-ray photoelectron spectroscopy (XPS). The XPS analyseso supported that carbon ejected from the target and background oxygen gas interacted to form a carbon-free SiO{sub 2} film, though a polymer target was used. However, an excessive oxygen gas pressure such as 4.4x10{sup -1} Torr caused to roughen the surface of the deposited films. Lowering the deposition rate helped to make a dense film and to improve electrical resistivity of the films up to 10{sup 9} {omega}m.

  7. Deposition and characterization of ZnSe nanocrystalline thin films

    Science.gov (United States)

    Temel, Sinan; Gökmen, F. Özge; Yaman, Elif; Nebi, Murat

    2018-02-01

    ZnSe nanocrystalline thin films were deposited at different deposition times by using the Chemical Bath Deposition (CBD) technique. Effects of deposition time on structural, morphological and optical properties of the obtained thin films were characterized. X-ray diffraction (XRD) analysis was used to study the structural properties of ZnSe nanocrystalline thin films. It was found that ZnSe thin films have a cubic structure with a preferentially orientation of (111). The calculated average grain size value was about 28-30 nm. The surface morphology of these films was studied by the Field Emission Scanning Electron Microscope (FESEM). The surfaces of the thin films were occurred from small stacks and nano-sized particles. The band gap values of the ZnSe nanocrystalline thin films were determined by UV-Visible absorption spectrum and the band gap values were found to be between 2.65-2.86 eV.

  8. Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

    International Nuclear Information System (INIS)

    Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

    2012-01-01

    The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In 2 O 3 . The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10 −6 cm 2V−1s−1 , the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

  9. The Influence of Plasma Nitriding Pre-Treatment on Tribological Properties of TiN Coatings Deposited by PACVD

    Science.gov (United States)

    Mahdipoor, M. S.; Mahboubi, F.; Ahangarani, Sh.; Raoufi, M.; Elmkhah, H.

    2012-06-01

    The aim of this study is to investigate the effect of plasma nitriding pre-treatment (PN) on mechanical and tribological behavior of TiN coatings produced by plasma-assisted chemical vapor deposition (PACVD). The heat treatment of quench and temper was carried out on hot work AISI H11 (DIN 1.2343) steel samples. A group of samples were plasma nitrided at 500 °C for 4 h in an atmosphere containing 25 vol.% nitrogen and 75 vol.% hydrogen. Then TiN layer was deposited on all of samples at 520 °C temperature, 8 kHz frequency, and 33% duty cycle. The microstructural, mechanical, and tribological properties of the coatings were investigated using SEM, WDS, AFM, microhardness tester, and pin-on-disc wear test. The load of wear test was 10 N and the samples were worn against different pins, ball-bearing steel (DIN 1.3505), and cemented tungsten carbide (WC-Co). The results indicate that the difference of hardness between the samples with PN-TiNlayer and those samples with only TiN layer without PN was 450 HV and the former samples showed a significant amount of wear resistance in comparison to the latter ones.

  10. V{sub 2}O{sub 5} thin film deposition for application in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Arbab, Elhadi A.A.; Mola, Genene Tessema [University of KwaZulu-Natal, School of Chemistry and Physics, Pietermaritzburg Campus, Private Bag X01, Scottsville (South Africa)

    2016-04-15

    Vanadium pentoxide V{sub 2}O{sub 5} films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V{sub 2}O{sub 5} films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V{sub 2}O{sub 5} as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V{sub 2}O{sub 5} buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS. (orig.)

  11. Fabrication and characterization of cadmium telluride, lead telluride and cadmium telluride/lead telluride superlattice thin films on Indium Tin Oxide (ITO)/glass substrates

    Science.gov (United States)

    Qin, Fei

    The objective of this work was to fabricate nanolayer films CdTe, PbTe and CdTe/PbTe superlattice structures on Indium Tin Oxide (ITO)/glass substrates. The purpose of this work is aimed at improving the efficiency of solar cells by enhanced optical absorption of light. The optical bandgap properties of the CdTe/PbTe superlattice structures were engineered to be employed as an absorber layer of a solar cell in order to optimize the absorption of the solar spectrum. Electrochemical Atomic Layer Deposition (EC-ALD) has been used to fabricate CdTe, PbTe and three different superlattice structures of CdTe/PbTe thin films on ITO-coated glass: (CdTe20/PbTe20)3, (CdTe10/PbTe20)3 and (CdTe5/PbTe20)3. These are intended to serve as the absorber layer of a solar cell. In our experiments, Cyclic Voltammetry (CV) and current monitoring helped us obtain appropriate deposition potentials. The grain sizes of the superlattices were studied by using Scanning Electron Microscopy (SEM). The chemical composition of the films was determined by Energy-Dispersive X-ray Spectroscopy (EDS). Optical absorption measurements were made in order to determine the band gap energy of the deposited films. We successfully shifted the bandgaps of CdTe/PbTe superlattices on ITO from 1.9 eV to 3.2 eV by changing the proportion of CdTe in the CdTe/PbTe films.

  12. Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

    Directory of Open Access Journals (Sweden)

    Kaupo Kukli

    2017-02-01

    Full Text Available Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 °C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2 doped with Ta2O5 were grown to thickness and composition depending on the number and ratio of alternating ZrO2 and Ta2O5 deposition cycles. All the films grown exhibited resistive switching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops. The most reliable windows between high and low resistive states were observed in Ta2O5 films mixed with relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2.

  13. Processing of Copper Zinc Tin Sulfide Nanocrystal Dispersions for Thin Film Solar Cells

    Science.gov (United States)

    Williams, Bryce Arthur

    A scalable and inexpensive renewable energy source is needed to meet the expected increase in electricity demand throughout the developed and developing world in the next 15 years without contributing further to global warming through CO2 emissions. Photovoltaics may meet this need but current technologies are less than ideal requiring complex manufacturing processes and/or use of toxic, rare-earth materials. Copper zinc tin sulfide (Cu 2ZnSnS4, CZTS) solar cells offer a true "green" alternative based upon non-toxic and abundant elements. Solution-based processes utilizing CZTS nanocrystal dispersions followed by high temperature annealing have received significant research attention due to their compatibility with traditional roll-to-roll coating processes. In this work, CZTS nanocrystal (5-35 nm diameters) dispersions were utilized as a production pathway to form solar absorber layers. Aerosol-based coating methods (aerosol jet printing and ultrasonic spray coating) were optimized for formation of dense, crack-free CZTS nanocrystal coatings. The primary variables underlying determination of coating morphology within the aerosol-coating parameter space were investigated. It was found that the liquid content of the aerosol droplets at the time of substrate impingement play a critical role. Evaporation of the liquid from the aerosol droplets during coating was altered through changes to coating parameters as well as to the CZTS nanocrystal dispersions. In addition, factors influencing conversion of CZTS nanocrystal coatings into dense, large-grained polycrystalline films suitable for solar cell development during thermal annealing were studied. The roles nanocrystal size, carbon content, sodium uptake, and sulfur pressure were found to have pivotal roles in film microstructure evolution. The effects of these parameters on film morphology, grain growth rates, and chemical makeup were analyzed from electron microscopy images as well as compositional analysis

  14. Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Gold

    Science.gov (United States)

    Almaev, A. V.; Gaman, V. I.

    2017-11-01

    Effect of hydrogen in the concentration range from 10 to 2000 ppm on the characteristics of sensors based on thin films of tin dioxide modified with gold (Au/SnO2:Sb, Au) is studied in the thermo-cyclic mode at temperatures from 623 to 773 K and absolute humidity from 2.5 to 20 g/m3. Experimental data are discussed using expressions obtained within the framework of a model that takes into account the presence of three types of adsorbed particles (O¯, OH, and OH¯) on the surface of SnO2 nanocrystals. The characteristics of the sensors based on thin Pt/Pd/SnO2:Sb films (the first series) are compared with those of Au/SnO2:Sb, Au films (the second series). It is found that the degree of dissociation of molecular hydrogen into atoms during adsorption on the sensor under interaction with Au particles on the SnO2 surface is 4 times greater than that under interaction with Pt/Pd particles. The degree of dissociation of H2O molecules into hydrogen atoms and hydroxyl groups in pure moist air on the surface of the sensors of the second series is 1.6 times greater than that for the sensors of the first series. Thus, gold is a more effective stimulator of the dissociation of H2 and H2O molecules than platinum and palladium. A formula is obtained that describes more accurately the dependence of the response of the sensors of both series to the effect of hydrogen on the concentration of this gas and on the temperature of the measuring devices.

  15. Formation of hydrothermal tin deposits: Raman spectroscopic evidence for an important role of aqueous Sn(IV) species

    Science.gov (United States)

    Schmidt, Christian

    2018-01-01

    The speciation of tin and the solubility of cassiterite in H2O + HCl were determined at temperatures to 600 °C using in situ Raman spectroscopy. In addition, information on the fluid-melt partition of Sn was obtained at 700 °C and indicated a preference of the fluid only at HCl concentrations that are much higher than in fluids exsolved from natural felsic melts. Dissolution of cassiterite generally resulted in formation of Sn(IV) species unless reduced conditions were generated by hydrogen permeation or carbohydrates in the starting material. The prevalent aqueous Sn(IV) species was [SnCl4(H2O)2]0, with additional [SnCl3(H2O)3]+ and [SnCl5(H2O)]-. The only detectable Sn(II) species was very likely [Sn(II)Cl3]-. Cassiterite solubility increased with HCl concentration and was generally high in H2O+HCl fluids, with no strong dependencies on temperature, pressure, or the oxidation state of tin in the fluid. The Sn(IV) concentrations at 500 and 600 °C determined from the integrated ν1[Sn(IV)sbnd Cl] band intensity are in good agreement with literature data on the cassiterite solubility in H2O + HCl at oxygen fugacities along the hematite-magnetite buffer. The combined results from previous experimental studies and this study demonstrate that HCl molality is a crucial parameter for hydrothermal mobilization and transport of tin and for cassiterite precipitation, and that pH, pressure and temperature are less important. Current models on hydrothermal tin deposit formation need to be augmented to include Sn(IV)sbnd Cl complexes as significant tin-transporting species. Irrespective of the oxidation state of tin in the fluid, cassiterite precipitates due to reaction of the hydrothermal fluid with the wall rock (greisen or skarn formation), dilution (mixing with meteoric water) or a decrease in the HCl activity in the aqueous liquid by boiling. A redox reaction is only required for tin transported as Sn(II) to be converted to Sn(IV).

  16. Surface properties of metal-nitride and metal-carbide films deposited on Nb for RF superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Garwin, E.L.; King, F.K.; Kirby, R.E.; Aita, O.

    1983-09-01

    Various effects occur which can prevent attainment of the high Q's and/or the high gradient fields necessary for the operation of rf superconducting cavities. One of these effects, multipactor, both causes the cavity to detune during filling due to resonant secondary electron emission at the cavity walls, and lowers the Q by dissipative processes. TiN deposited onto the high field regions of room temperature Al cavities has been used at SLAC to successfully reduce multipactor in the past. We have therefore studied TiN and its companion materials, NbN, NbC, and TiC, all on Nb substrates under several realistic conditions: (1) as deposited, (2) exposed to air, and (3) 1 keV electron-bombarded. The studied films (up to 14 nm thickness) were sputter deposited onto sputter-cleaned Nb substrates. Results indicate that the materials tested gave substantially the same results. The maximum secondary electron yields for as-deposited films was about 1.0 to 1.2. These yields rose to greater than 1.5 upon air-exposure and were reduced to nearly the pre-oxidized values after electron bombardment (about 3 x 10/sup 17/ electrons-cm/sup -2/ in the case of NbN and NbC). XPS analysis showed that the oxides (e.g. TiO/sub 2/ in the case of TiN films) formed during air exposure were only slightly reduced (converted to lower oxides) by the electron beam exposure. AES showed a slight reduction in the surface O concentration following beam exposure. The results indicate that any of these films would be poor choices if simply deposited and exposed to air, but, in fact, the in-situ electron bombardment which occurs in cavities serves to reduce the effective secondary electron yield and thereby causes a substantial reduction in multipacting.

  17. Surface properties of metal-nitride and metal-carbide films deposited on Nb for RF superconductivity

    International Nuclear Information System (INIS)

    Garwin, E.L.; King, F.K.; Kirby, R.E.; Aita, O.

    1983-09-01

    Various effects occur which can prevent attainment of the high Q's and/or the high gradient fields necessary for the operation of rf superconducting cavities. One of these effects, multipactor, both causes the cavity to detune during filling due to resonant secondary electron emission at the cavity walls, and lowers the Q by dissipative processes. TiN deposited onto the high field regions of room temperature Al cavities has been used at SLAC to successfully reduce multipactor in the past. We have therefore studied TiN and its companion materials, NbN, NbC, and TiC, all on Nb substrates under several realistic conditions: (1) as deposited, (2) exposed to air, and (3) 1 keV electron-bombarded. The studied films (up to 14 nm thickness) were sputter deposited onto sputter-cleaned Nb substrates. Results indicate that the materials tested gave substantially the same results. The maximum secondary electron yields for as-deposited films was about 1.0 to 1.2. These yields rose to greater than 1.5 upon air-exposure and were reduced to nearly the pre-oxidized values after electron bombardment (about 3 x 10 17 electrons-cm -2 in the case of NbN and NbC). XPS analysis showed that the oxides (e.g. TiO 2 in the case of TiN films) formed during air exposure were only slightly reduced (converted to lower oxides) by the electron beam exposure. AES showed a slight reduction in the surface O concentration following beam exposure. The results indicate that any of these films would be poor choices if simply deposited and exposed to air, but, in fact, the in-situ electron bombardment which occurs in cavities serves to reduce the effective secondary electron yield and thereby causes a substantial reduction in multipacting

  18. Optimized growth conditions of epitaxial SnSe films grown by pulsed laser deposition

    Science.gov (United States)

    Hara, Takamitsu; Fujishiro, Hiroyuki; Naito, Tomoyuki; Ito, Akihiko; Goto, Takashi

    2017-12-01

    We have grown epitaxial tin monoselenide (SnSe) films on MgO or SrTiO3 (STO) substrates by pulsed laser deposition (PLD) at T s = 473 or 573 K, and investigated the optimized growth condition in terms of crystal orientation, crystallinity, and electrical resistivity. For the PLD procedure, a SnSe x (x = 1.0–1.6) target containing excess Se was used to compensate for the vaporization of Se. The crystal orientation and crystallinity of the SnSe films changed depending on the growth conditions, and the magnitude of the electrical resistivity ρ of the films was closely related to the crystalline nature. The SnSe film grown on the MgO substrate at T s = 573 K using the target with x = 1.4 was the most highly a-axis-oriented and highly crystalized among all of the films investigated in this study. However, the ρ of the film in the bc-plane was about one order of magnitude larger than those of the reported single crystal and the a-axis-oriented crystalline sample fabricated by spark plasma sintering. This larger ρ was suggested to result from the lattice mismatch and/or a small amount of nonstoichiometry in the film.

  19. Low temperature plasma-enhanced ALD TiN ultrathin films for Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric MIM structures

    Energy Technology Data Exchange (ETDEWEB)

    Kozodaev, M.G.; Chernikova, A.G.; Markeev, A.M. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); Lebedinskii, Y.Y. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoye Shosse 31, 115409 Moscow (Russian Federation); Polyakov, S.N. [Technological Institute for Superhard and Novel Carbon Materials, Tsentral' naya str. 7a, 142190, Troitsk, Moscow (Russian Federation)

    2017-06-15

    In this work chemical and electrical properties of TiN films, grown by low temperature plasma-enhanced atomic layer deposition (PE-ALD) process from TiCl{sub 4} and NH{sub 3}, were investigated. Electrical resistivity as low as 250 μOhm x cm, as well as the lowest Cl impurity content, was achieved at 320 C. Full-ALD Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based metal-ferroelectric-metal capacitor with TiN electrodes was fabricated and its electrical properties were investigated. It was also shown that the proposed PE-ALD process provides an early film continuity, which was confirmed by ultrathin fully continuous film growth. Such ultrathin (3 nm) and fully continuous TiN film was also successfully implemented as the top electrode to Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric capacitor. Angle-resolved X-ray photoelectron spectroscopy (AR-XPS) was used for its thickness determination and a visible wake-up effect in underlying Hf{sub 0.5}Zr{sub 0.5}O{sub 2} layer was clearly observed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Synthesis and characterization of electrochemically deposited nanocrystalline CdTe thin films

    International Nuclear Information System (INIS)

    Singh, Ragini Raj; Painuly, Diksha; Pandey, R.K.

    2009-01-01

    Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures. In this work we prepared the nanocrystalline CdTe thin films on indium tin oxide coated glass substrate from aqueous acidic bath at the deposition temperature 50 ± 1 deg. C. The films were grown potentiostatically from -0.60 V to -0.82 V with respect to saturated calomel reference electrode. The structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), atomic force microscopy (AFM), and UV-vis spectroscopy respectively and cyclic voltammetery. The structural and optical studies revealed that films are nanocrystalline in nature and possess cubic phase, also the films are preferentially oriented along the cubic (1 1 1) plane. The effect of cadmium composition on the deposited morphology was also investigated. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass approximation and tight binding approximation. It is shown that the experimentally determined absorption edges depart from the theoretically calculated values.

  1. Resonant infrared pulsed laser deposition of thin biodegradable polymer films

    DEFF Research Database (Denmark)

    Bubb, D.M.; Toftmann, B.; Haglund Jr., R.F.

    2002-01-01

    Thin films of the biodegradable polymer poly(DL-lactide-co-glycolide) (PLGA) were deposited using resonant infrared pulsed laser deposition (RIR-PLD). The output of a free-electron laser was focused onto a solid target of the polymer, and the films were deposited using 2.90 (resonant with O...... absorbance spectrum of the films is nearly identical with that of the native polymer, the average molecular weight of the films is a little less than half that of the starting material. Potential strategies for defeating this mass change are discussed....

  2. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  3. A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

    Science.gov (United States)

    Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

    2011-09-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

  4. Stripe domains and magnetoresistance in thermally deposited nickel films

    International Nuclear Information System (INIS)

    Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.

    2004-01-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

  5. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  6. Magnetic field and temperature dependent measurements of hall coefficient in thermal evaporated Tin-Doped Cadmium Oxide Thin films

    International Nuclear Information System (INIS)

    Hamadi, O.; Shakir, N.; Mohammed, F.

    2010-01-01

    CdO:Sn thin films are deposited onto glass substrates by thermal evaporation under vacuum. The studied films are polycrystalline and have an NaCl structure. The Hall effect is studied for films with different thickness as substrates are maintained at different temperatures. The temperature dependence of the Hall mobility is also investigated. (authors)

  7. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  8. Perovskite solar cells based on nanocolumnar plasma-deposited ZnO thin films.

    Science.gov (United States)

    Ramos, F Javier; López-Santos, Maria C; Guillén, Elena; Nazeeruddin, Mohammad Khaja; Grätzel, Michael; Gonzalez-Elipe, Agustin R; Ahmad, Shahzada

    2014-04-14

    ZnO thin films having a nanocolumnar microstructure are grown by plasma-enhanced chemical vapor deposition at 423 K on pre-treated fluorine-doped tin oxide (FTO) substrates. The films consist of c-axis-oriented wurtzite ZnO nanocolumns with well-defined microstructure and crystallinity. By sensitizing CH3NH3PbI3 on these photoanodes a power conversion of 4.8% is obtained for solid-state solar cells. Poly(triarylamine) is found to be less effective when used as the hole-transport material, compared to 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), while the higher annealing temperature of the perovskite leads to a better infiltration in the nanocolumnar structure and an enhancement of the cell efficiency. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

  10. New deposition processes for the growth of oxide and nitride thin films

    International Nuclear Information System (INIS)

    Apen, E.A.; Atagi, L.M.; Barbero, R.S.; Espinoza, B.F.; Hubbard, K.M.; Salazar, K.V.; Samuels, J.A.; Smith, D.C.; Hoffman, D.M.

    1998-01-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe 2 ] 4 with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr 3 N 4 , and the thermal CVD of GaN and AlN. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors

  11. Deposition efficiency in the preparation of ozone-producing nickel and antimony doped tin oxide anodes

    Directory of Open Access Journals (Sweden)

    Staffan Sandin

    2017-03-01

    Full Text Available The influence of precursor salts in the synthesis of nickel and antimony doped tin oxide (NATO electrodes using thermal decomposition from dissolved chloride salts was investigated. The salts investigated were SnCl4×5H2O, SnCl2×2H2O, SbCl3 and NiCl2×6H2O. It was shown that the use of SnCl4×5H20 in the preparation process leads to a tin loss of more than 85 %. The loss of Sb can be as high as 90 % while no indications of Ni loss was observed. As a consequence, the concentration of Ni in the NATO coating will be much higher than in the precursor solution. This high and uncontrolled loss of precursors during the preparation process will lead to an unpredictable composition in the NATO coating and will have negative economic and environmental effects. It was found that using SnCl2×2H20 instead of SnCl4×5H2O can reduce the tin loss to less than 50 %. This tin loss occurs at higher temperatures than when using SnCl4×5H2O where the tin loss occurs from 56 – 147 °C causing the composition to change both during the drying (80 – 110 °C and calcination (460 -550 °C steps of the preparation process. Electrodes coated with NATO based on the two different tin salts were investigated for morphology, composition, structure, and ozone electrocatalytic properties.

  12. Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Turgut, Güven; Koçyiğit, Adem; Sönmez, Erdal

    2015-01-01

    The Pr and Ta separately doped FTO (10 at.% F incorporated SnO 2 ) films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications. (paper)

  13. Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

    DEFF Research Database (Denmark)

    Wen, Liang Gong; Roussel, Philippe; Pedreira, Olalla Varela

    2016-01-01

    Atomic layer deposition of ruthenium is studied as a barrierless metallization solution for future sub-10 nm interconnect technology nodes. We demonstrate the void-free filling in sub-10 nm wide single damascene lines using an ALD process in combination with 2.5 angstrom of ALD TiN interface and po......'stdeposition annealing. At such small dimensions, the ruthenium effective resistance depends less on the scaling than that of Cu/barrier systems. Ruthenium effective resistance potentially crosses the Cu curve at 14 and 10 nm according to the semiempirical interconnect resitance model for advanced technology nodes...

  14. Effects of deposition time in chemically deposited ZnS films in acidic solution

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, H.; Chelouche, A., E-mail: azeddinechelouche@gmail.com; Talantikite, D.; Merzouk, H.; Boudjouan, F.; Djouadi, D.

    2015-08-31

    We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h.

  15. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  16. Influence of deposition parameters and annealing on Cu{sub 2}ZnSnS{sub 4} thin films grown by SILAR

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Kinjal; Shah, Dimple V. [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Kheraj, Vipul, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

    2015-02-15

    Highlights: • Optimisation of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur.

  17. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  18. Thin film deposition using rarefied gas jet

    Science.gov (United States)

    Pradhan, Sahadev, , Dr.

    2017-06-01

    The rarefied gas jet of aluminium is studied at Mach number Ma = (Uj /√{ kbTj / mg }) in the range .01 PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kbis the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn=0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number, which allows scattering collisions to rapidly direct the atoms to the substrate.

  19. Sputter deposition of metallic thin film and directpatterning

    Energy Technology Data Exchange (ETDEWEB)

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  20. Multi-Layer Polymer Light-Emitting Diodes Prepared by Vapor Deposition Polymerization of Polyazomethine Thin Film

    Science.gov (United States)

    Itabashi, Atsushi; Fukushima, Masao; Murata, Hideyuki

    2008-02-01

    A novel poly(azomethine) (PAM) thin film deposited by vapor deposition polymerization (VDP) process was used in the emissive layer of polymer light-emitting diodes (PLEDs). 1,4-Bis(4-formylstyryl)benzene (BFSB) and 4,4''-diamino-(1,1',4',1'')-terphenyl (DAT) were co-deposited to form PAM thin films at various substrate temperatures. Fluorescent quantum yield of novel PAM synthesized by using BFSB monomer increased one order of magnitude compared with the previous report. PLEDs with the device structure of indium-tin oxide (ITO)/poly(3,4-ethylene dioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT:PSS) (100 nm)/PAM (140 nm)/LiF (0.5 nm)/Al (80 nm) exhibited of electroluminescence from the PAM layer for the first time. The characteristics of PLEDs suggest the electron mobility of PAM is higher than hole mobility.

  1. Study of Optical and Electrical Properties of In2S3:Sn Films Deposited by Spray Pyrolysis

    Science.gov (United States)

    Kraini, M.; Bouguila, N.; Halidou, I.; Moadhen, A.; Vázquez-Vázquez, C.; López-Quintela, M. A.; Alaya, S.

    2015-07-01

    Tin-doped In2S3 films were grown by the chemical spray pyrolysis method using compressed air as a carrier gas. Tin is incorporated in the solution using SnCl4. Structural and optical properties of films were investigated by x-ray diffraction (XRD), absorption, Raman and photoluminescence spectroscopies. Field emission scanning electron microscopy (FESEM) and energy dispersive x-ray spectroscopy were used to explore the surface morphology. The properties of In2S3 thin films are influenced by Sn doping. XRD studies revealed that the deposited films were polycrystalline in nature exhibiting cubic structure and oriented preferentially towards (111). According to FESEM, the surface morphology of the films was free of defects. Raman studies showed different peaks related to In2S3 phase and did not show any secondary phases of In-Sn and Sn-S. In2S3:Sn films exhibited transparency over 60-85% in the visible and infrared regions. The optical band gap was found to vary in the range 2.71-2.58 eV for direct transitions. The room temperature photoluminescence (PL) studies revealed two PL bands, centered at 529 nm (band A) and 725 nm (band B). From these results, one can conclude that our material can be used as transmittive windows in low-cost solar cells. The conductance and capacitance characterization at ambient temperature were also investigated and gave interesting physical properties for photovoltaic applications.

  2. Room temperature deposition of zinc oxide thin films by rf-magnetron sputtering for application in solar cells

    Science.gov (United States)

    Sanal, K. C.; Trujillo, R. R.; Nair, P. K.; Nair, M. T. S.

    2016-09-01

    Recent reports indicate that thin films of oxides of zinc: ZnO, Zn(O,S), or Zn-Mg-O, could be a better buffer component than CdS to provide an adequate band alignment with orthorhombic tin sulphide in thin lm solar cells. Thin films of ZnO were grown by rf-magnetron sputtering on different substrates at room temperature. Thin films of ZnO obtained by different deposition methods show hexagonal crystal structure, usually with a preferential orientation of (002) crystallographic planes parallel to the substrate surface. However, in the present study XRD patterns indicate that thicker ZnO films on glass substrates have preferential growth of (103) planes, while that on chemically deposited CdS or ZnS films preferential orientation of (002) planes persists. Bandgap of ZnO films increases from 3.2 eV to 3.4 eV when the chamber pressure used for deposition varies from 2.3 mTorr to 6 mTorr. ZnO films were incorporated in a solar cell structure stainless steel/SnS(cubic)/SnS(orthorhombic)/SnS(cubic)/CdS/ZnO/ZnO:Al. It showed open-circuit voltage of 0.318 V, short-circuit current density of 3.6 mA/cm2 and conversion efficiency of 0.82%.

  3. Nickel films: Nonselective and selective photochemical deposition and properties

    International Nuclear Information System (INIS)

    Smirnova, N.V.; Boitsova, T.B.; Gorbunova, V.V.; Alekseeva, L.V.; Pronin, V.P.; Kon'uhov, G.S.

    2006-01-01

    Nickel films deposited on quartz surfaces by the photochemical reduction of a chemical nickel plating solution were studied. It was found that the deposition of the films occurs after an induction period, the length of which depends on the composition of the photolyte and the light intensity. Ni particles with a mean diameter of 20-30 nm were detected initially by transmission electron microscopy. The particles then increased in size (50 nm) upon irradiation and grouped into rings consisting of 4-5 particles. Irradiation with high-intensity light produces three-dimensional films. The calculated extinction coefficient of the nickel film was found to be 4800 L mol -1 cm -1 . Electron diffraction revealed that the prepared amorphous nickel films crystallize after one day of storage. It was determined that the films exhibit catalytic activity in the process of nickel deposition from nickel plating solution. The catalytic action remains for about 5-7 min after exposure of the films to air. The processes of selective and nonselective deposition of the nickel films are discussed. The use of poly(butoxy titanium) in the process of selective photochemical deposition enables negative and positive images to be prepared on quartz surfaces

  4. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

    Science.gov (United States)

    Jaya, T. P.; Pradyumnan, P. P.

    2017-12-01

    Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

  5. Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

    Science.gov (United States)

    Sall, Thierno; Marí Soucase, Bernabé; Mollar, Miguel; Hartitti, Bouchaib; Fahoume, Mounir

    2015-01-01

    In2S3 thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In2S3 thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In2S3 phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.

  6. Electrochromism in tungsten oxide thin films prepared by chemical bath deposition

    Directory of Open Access Journals (Sweden)

    Julijana Velevska

    2017-03-01

    Full Text Available Tungsten oxide (WO3 thin films were prepared by a simple, economical, chemical bath deposition method onto fluorine doped tin oxide (FTO coated glass substrates. The electrochemical properties of the films were characterized by cyclic voltammetry. The obtained films exhibited electrochromism, changing color from initially colorless to deep blue, and back to colorless. Visible transmittance spectra of (WO3 films were recorded in-situ in their both, bleached and colored states. From those spectra, absorption coefficient (a and the optical energy gaps were evaluated. The dependence of the optical density on the charge density was examined and the coloration efficiency (h was calculated to be 22.11 cm2 C-1. The response times of the coloring and bleaching to an abrupt potential change from -2.5 V to +2.5 V and reverse, were found to be 9.3 and 1.2 s respectively. The maximum light intensity modulation ability of the films, when the AM1.5 spectrum is taken as an input, was calculated to be about 50 %.

  7. Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Guo, C.T.

    2008-01-01

    Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH 4 and CH 4 /H 2 gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I D /I G on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media

  8. Dynamics of faceted thin films formation during vapor deposition

    Science.gov (United States)

    Li, Kun-Dar; Huang, Po-Yu

    2018-01-01

    In this study, an anisotropic phase-field model was established to simulate the growth of crystalline thin films during vapor deposition. The formation and evolution of characteristic surface with faceted morphologies were demonstrated, in accordance with the regularly obtained microstructure in the actual experiments. In addition, the influences of deposition parameters, such as the deposition rate and the interfacial energy, on the formation mechanism of the characteristic morphology were also illustrated. While a relatively low surface energy of substrate was regarded, the faceted islands were formed, owing to the anisotropic interfacial energy of thin films. In the condition of a high surface energy of substrate, the layered structures of deposited films were produced, which was corresponding to the Frank–van der Merwe growth mode. As various deposition rates were utilized in the numerical simulations, diverse surface morphologies were developed on the basis of the dominant mechanisms, correlating with the adatom diffusion and the deposition kinetics. According to the calculation results, it was observed that a surface character with flattened morphology was generally driven by the adatom diffusion, while the factor of the deposition kinetics was inclined to roughen the surface of thin films. These numerical simulations enhanced the knowledge of thin film growth and facilitated the progress of the vapor deposition technology for advanced applications.

  9. Chemical bath ZnSe thin films: deposition and characterisation

    Science.gov (United States)

    Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

    1998-01-01

    The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

  10. ZnSe thin films by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Patil, P.S.; Tributsch, H. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CS, Glienicker Strasse-100, D-14109 Berlin (Germany); Ennaoui, A. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CG, Glienicker Strasse-100, D-14109 Berlin (Germany)

    1998-09-04

    The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition method using selenourea as a selenide ion source from an aqueous alkaline medium. The effect of Zn ion concentration, bath temperature and deposition time period on the quality and thickness of ZnSe films has been studied. The ZnSe films have been characterized by XRD, TEM, EDAX, TRMC (time-resolved microwave conductivity), optical absorbance and RBS techniques for their structural, compositional, electronic and optical properties. The as-deposited ZnSe films are found to be amorphous, Zn rich with optical band gap, Eg, equal to 2.9 eV

  11. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  12. Chemical vapor deposition of cadmium tellurium films for photovoltaic devices

    International Nuclear Information System (INIS)

    Chu, S.S.; Chu, T.L.; Han, K.D.; Liu, Y.Z.; Mantravadi, M.

    1987-01-01

    Cadmium telluride films have been deposited by chemical vapor deposition (CVD) and close-spaced sublimation (CSS), and their structural and electrical properties have been characterized in detail. The CVD technique has the advantage of controlling the electrical resistivity of p-CdTe films while the CST technique is capable of depositing p-CdTe films at high rates. Thin film heterojunction solar cells of the configuration p-CdTe/CdS/SnO/sub 2/:F/glass have been prepared by the deposition techniques. Solar cells of 1 cm/sup 2/ or larger in area with AM1.5 (global) efficiency of 10.5% have been prepared

  13. Optimizing growth conditions for electroless deposition of Au films ...

    Indian Academy of Sciences (India)

    Unknown

    aurate plating solutions has been carried out at varying concentrations, deposition durations as well as bath temperatures, and the result- ing films were characterized by X-ray diffraction, optical profilometry, atomic force microscopy and ...

  14. Laser Induced Chemical Vapor Deposition of Thin Films

    National Research Council Canada - National Science Library

    Zahavi, Joseph

    1995-01-01

    .... It completes the information which was given in the previous two progress reports. Basically, the aim of the first year was to study the possibility of deposition of silicon nitride thin films from silane and ammonia at low temperatures...

  15. Surface treatment of nanocrystal quantum dots after film deposition

    Science.gov (United States)

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  16. Optical, structural and electrical properties of Mn doped tin oxide thin ...

    Indian Academy of Sciences (India)

    Unknown

    The dopant concentration was varied by controlling the thickness of the metal layer. The overall thickness of the film was 115 nm with ... Tin oxide; transparent conductors; thin films. 1. Introduction. Transparent conducting oxides have ... sited sequentially on top of the metal films. The weight of metals in each deposition was ...

  17. Growth of superconducting tantalum films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Scherschel, M. (Lab. fuer Festkoerperphysik, ETH-Hoenggerberg, Zuerich (Switzerland) Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Finkbeiner, F. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Zhao, S.P. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Jaggi, A. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Maier, T. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Lerch, P. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Zehnder, A. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Ott, H.R. (Lab. fuer Festkoerperphysik, ETH-Hoenggerberg, Zuerich (Switzerland) Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland))

    1994-02-01

    Pulsed laser deposition (PLD) was used to grow superconducting Ta-films with critical temperatures close to bulk values (4.5 K) on sapphire substrates. Results are compared with films grown by e-beam evaporation. The PLD method allows the growth of superconducting Ta-films on substrates kept at ambient temperature but film surfaces are plagued by sub-micron particles. On the other hand, e-beam evaporation results in smooth surfaces but requires a substrate temperature of the order of 400 C for producing high-quality superconducting films. Critical temperatures, residual resistance ratios, and crystal structure are presented. (orig.)

  18. Recovery and Purification of Tin from Tailings from the Penouta Sn–Ta–Nb Deposit

    Directory of Open Access Journals (Sweden)

    Félix Antonio López

    2018-01-01

    Full Text Available A concentrate obtained from mining tailings containing mainly cassiterite and columbotantalite was reduced for the production of tin metal. The compounds CaCO3, Na2CO3, K2CO3, and borax were used as fluxes in the pyrometallurgical reduction smelting process, and graphite was employed as the reducing agent. The greatest recovery of Sn (>95% was obtained when using CaCO3 as the flux; the purity of Sn was 96%. A slag equivalent to 25% of the mass of the initial concentrate was produced during the recovery of the Sn. This contained 45% Nb2O5 and Ta2O5, adding extra value to the mine tailings. The tin metal ingot was purified by electrorefining involving a tin and H2SO4 electrolyte solution and a 101.9 A/m2 current applied for 148 h. Under these conditions, 90 wt % of the Sn in the ingot was recovered at a purity of 99.97%.

  19. Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Po-Hsun [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Chang, Kuan-Chang, E-mail: kcchang@pkusz.edu.cn [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); School of Electronic and Computer Engineering, Peking University, Shenzhen 518055 (China); Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Chih-Cheng; Chen, Wen-Chung; Lin, Jiun-Chiu; Wang, Ming-Hui [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Zheng, Hao-Xuan; Chen, Min-Chen [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Sze, Simon M. [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC (China)

    2017-08-31

    In this paper, we implement a post-oxidation method to modify surface characteristics of indium tin oxide (ITO) films by using an O{sub 2} inductively coupled plasma (ICP) treatment. Based on field emission-scanning electron microscope (FE-SEM) and atomic force microscope (AFM) analysis, we found that the surface morphologies of the ITO films become slightly flatter after the O{sub 2} plasma treatment. The optical characteristics and X-ray diffraction (XRD) experiments of either pure ITO or O{sub 2} plasma treated ITO films were also verified. Even though the XRD results showed no difference from bulk crystallizations, the oxygen concentrations increased at the film surface after O{sub 2} plasma treatment, according to the XPS inspection results. Moreover, this study investigated the effects of two different plasma treatment times on oxygen concentration in the ITO films. The surface sheet resistance of the plasma treated ITO films became nearly non-conductive when measured with a 4-point probe. Finally, we applied the O{sub 2} plasma treated ITO films as the insulator in resistive random access memory (RRAM) to examine their potential for use in resistive switching storage applications. Stable resistance switching characteristics were obtained by applying the O{sub 2} plasma treatment to the ITO-based RRAM. We also confirmed the relationship between plasma treatment time and RRAM performance. These material analyses and electrical measurements suggest possible advantages in using this plasma treatment technique in device fabrication processes for RRAM applications.

  20. Structure, optical and electrical properties of indium tin oxide ultra thin films prepared by jet nebulizer spray pyrolysis technique

    Directory of Open Access Journals (Sweden)

    M. Thirumoorthi

    2016-03-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared by jet nebulizer spray pyrolysis technique for different Sn concentrations on glass substrates. X-ray diffraction patterns reveal that all the films are polycrystalline of cubic structure with preferentially oriented along (222 plane. SEM images show that films exhibit uniform surface morphology with well-defined spherical particles. The EDX spectrum confirms the presence of In, Sn and O elements in prepared films. AFM result indicates that the surface roughness of the films is reduced as Sn doping. The optical transmittance of ITO thin films is improved from 77% to 87% in visible region and optical band gap is increased from 3.59 to 4.07 eV. Photoluminescence spectra show mainly three emissions peaks (UV, blue and green and a shift observed in UV emission peak. The presence of functional groups and chemical bonding was analyzed by FTIR. Hall effect measurements show prepared films having n-type conductivity with low resistivity (3.9 × 10−4 Ω-cm and high carrier concentrations (6.1 × 1020 cm−3.

  1. Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

    Science.gov (United States)

    Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

    2018-03-01

    Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

  2. Influence of plasma density on the chemical composition and structural properties of pulsed laser deposited TiAlN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Quiñones-Galván, J. G.; Camps, Enrique [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, México D.F. C.P. 11801 (Mexico); Muhl, S. [Instituto de Investigaciones en Materiales, UNAM, México D.F. C.P. 04510 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, Apdo. Postal 307, C.P. 45101 Zapopan, Jalisco (Mexico); Campos-González, E. [Departamento de Física, CINVESTAV-IPN, Apdo. Postal 14-740, México D.F. 07360 (Mexico)

    2014-05-15

    Incorporation of substitutional Al into the TiN lattice of the ternary alloy TiAlN results in a material with improved properties compared to TiN. In this work, TiAlN thin films were grown by the simultaneous ablation of Ti and Al targets in a nitrogen containing reactive atmosphere. The deposit was formed on silicon substrates at low deposition temperature (200 °C). The dependence of the Al content of the films was studied as a function of the ion density of the plasma produced by the laser ablation of the Al target. The plasma parameters were measured by means of a planar Langmuir probe and optical emission spectroscopy. The chemical composition of the films was measured by energy dispersive X-ray spectroscopy. The results showed a strong dependence of the amount of aluminum incorporated in the films with the plasma density. The structural characterization of the deposits was carried out by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy, where the substitutional incorporation of the Al into the TiN was demonstrated.

  3. The deposition of magnesium fluoride (MGF 2 ) thin films by ...

    African Journals Online (AJOL)

    The Chemical Bath Deposition (CBD) technique was successfully employed in the growth of magnesium fluoride (MgF2) thin films. The films were characterized and optimized. The characterization included: the optical and solid state properties such as the transmittance (T)/reflectance (R) absorbance (A) spectra which ...

  4. Stoichiometry control in oxide thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, R.

    2017-01-01

    A general challenge in the synthesis of complex oxide nanostructures and thin films is the control of the stoichiometry and herewith control of thin film properties. Pulsed Laser Deposition (PLD) is widely known for its potential for growing near stoichiometric highly crystalline complex metal oxide

  5. Thickness effect on properties of titanium film deposited by dc ...

    Indian Academy of Sciences (India)

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD) ...

  6. Cadmium sulfide thin films growth by chemical bath deposition

    Science.gov (United States)

    Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

    2018-03-01

    Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

  7. Carbonaceous alumina films deposited by MOCVD from aluminium ...

    Indian Academy of Sciences (India)

    Spectroscopic ellipsometry was used to characterize carbonaceous, crystalline aluminium oxide films grown on Si(100) by low-pressure metal organic chemical vapour deposition, using aluminium acetylacetonate as the precursor. The presence of carbon in the films, attribured to the use of a metalorganic precursor for the ...

  8. Oxidation behaviors of poly(3-hexylthiophene-2,5-diyl) on indium tin oxide surfaces without and with additional TiO2 thin films

    International Nuclear Information System (INIS)

    Kim, Dae Han; Kim, Young Dok

    2015-01-01

    Poly(3-hexylthiophene-2,5-diyl) (P3HT) layers spin-coated on bare and TiO 2 -coated indium tin oxide (ITO) surfaces with two different TiO 2 film thicknesses were exposed to visible light and humid atmosphere, and the oxidation behaviors these layers were studied using X-ray photoelectron spectroscopy. S atoms in P3HT were oxidized to sulfoxide without ring opening of P3HT under our experimental conditions. When the mean thickness of TiO 2 on ITO was ⁓19 nm, oxidation of the S atoms on this substrate was more pronounced than on bare ITO and ITO covered with thinner TiO 2 films (mean thickness: ⁓7 nm). Studies using photoluminescence (PL) suggest that electron–hole pairs created in P3HT on bare ITO can be transferred into the ITO and most likely recombine efficiently in ITO by electron–electron scattering. Relatively thin TiO 2 films on ITO do not show much change in PL with respect to the case of bare ITO; however, when a thicker TiO 2 film is deposited between ITO and P3HT, charge transfer from optically excited P3HT to ITO seems to be suppressed. Therefore, the probability for charge transfer from optically excited P3HT to O 2 and H 2 O, forming strong oxidizing agents such as math formula and OH radicals, can be increased in the presence of a thicker TiO 2 film on ITO

  9. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  10. Optimisation of Spray Deposited SnO 2 Thin Film for Solar Cell ...

    African Journals Online (AJOL)

    The use of conducting tin-oxide (SnO2 ) films for fabrication of solar cell is becoming increasingly important because of reasonably high efficiency and ease in fabrication. The role of the thin-oxide film is very critical for high efficiency. Resistivity, thickness and transmittance of the film should be of correct order. The most ...

  11. An economic CVD technique for pure SnO2 thin films deposition ...

    Indian Academy of Sciences (India)

    A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has ...

  12. An economic CVD technique for pure SnO 2 thin films deposition

    Indian Academy of Sciences (India)

    A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has ...

  13. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  14. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Paloly, Abdul Rasheed; Satheesh, M. [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain); Rajappan Achary, Sreekumar [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Bushiri, M. Junaid, E-mail: junaidbushiri@gmail.com [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India)

    2015-12-01

    Highlights: • SnO{sub 2} thin films were grown on hydrophilic and hydrophobic glass substrates. • Samples on hydrophobic substrates are having comparatively larger lattice volume. • Films on hydrophobic substrates have larger particles and low density distribution. • Substrate dependent photoluminescence emission is observed and studied. • SnO{sub 2} thin films grown over hydrophobic substrates may find potential applications. - Abstract: In this paper, we have demonstrated the growth of tin oxide (SnO{sub 2}) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO{sub 2} thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO{sub 2} films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO{sub 2} thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  15. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    Science.gov (United States)

    Singaravelu, S.; Klopf, J. M.; Schriver, K. E.; Park, H. K.; Kelley, M. J.; Haglund, R. F.

    2014-03-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C-H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C-H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  16. Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuechun [School of Materials Science and Engineering, Yunnan University, Kunming (China); Chen, Xiuhua, E-mail: chenxh@ynu.edu.cn [School of Materials Science and Engineering, Yunnan University, Kunming (China); Ma, Wenhui [National Engineering Laboratory of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming (China); Shang, Yudong; Lei, Zhengtao; Xiang, Fuwei [School of Materials Science and Engineering, Yunnan University, Kunming (China)

    2017-02-28

    Highlights: • In this paper, the electroless deposited NiCrB thin film was mainly in the form of NiB, CrB{sub 2} compounds and elementary Ni. • The sheet resistance of NiCrB thin film was 3.043 Ω/□, it is smaller than that of the widely used Ta, TaN and TiN diffusion barrier layers. • Annealing experiments showed that the failure temperature of NiCrB thin film regarding Cu diffusion was 900 °C. • NiCrB barrier layer crystallized after 900 °C annealing, Cu grains arrived at Si-substrate through grain boundaries, resulting in the formation of Cu{sub 3}Si. • Eelectroless deposited NiCrB film also had good oxidation resistance, it is expected to become an anti-oxidant layer of copper interconnection. - Abstract: NiCrB films were deposited on Si substrates using electroless deposition as a diffusion barrier layer for Cu interconnections. Samples of the prepared NiCrB/SiO{sub 2}/Si and NiCrB/Cu/NiCrB/SiO{sub 2}/Si were annealed at temperatures ranging from 500 °C to 900 °C. The reaction mechanism of the electroless deposition of the NiCrB film, the failure temperature and the failure mechanism of the NiCrB diffusion barrier layer were investigated. The prepared samples were subjected to XRD, XPS, FPP and AFM to determine the phases, composition, sheet resistance and surface morphology of samples before and after annealing. The results of these analyses indicated that the failure temperature of the NiCrB barrier film was 900 °C and the failure mechanism led to crystallization and grain growth of the NiCrB barrier layer after high temperature annealing. It was found that this process caused Cu grains to reach Si substrate through the grain boundaries, and then the reaction between Cu and Si resulted in the formation of highly resistive Cu{sub 3}Si.

  17. Low resistance polycrystalline diamond thin films deposited by hot ...

    Indian Academy of Sciences (India)

    Administrator

    Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition. MAHTAB ULLAH, EJAZ AHMED, ABDELBARY ELHISSI† and WAQAR ..... Support Initiative Program (IRSIP). References. Abbas T, Ullah M, Rana A M and Arif Khalil R M 2007 Mater. Sci. Poland 25 1161. Bataineh M ...

  18. Deposition of metal chalcogenide thin films by successive ionic layer ...

    Indian Academy of Sciences (India)

    ) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, ...

  19. Deposition of metal chalcogenide thin films by successive ionic layer

    Indian Academy of Sciences (India)

    ) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, ...

  20. Deposition of silicon films in presence of nitrogen plasma— A ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. A design, development and validation work of plasma based 'activated reactive evaporation (ARE) system' is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by.

  1. Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process

    CSIR Research Space (South Africa)

    Thabethe, BS

    2013-01-01

    Full Text Available are commercially available for detecting fuel gas, carbon monoxide, combustible gases, ammonia, water vapour, and numerous other gases and vapors [11]. Due to the enhanced surface-to-volume ratio of 1D struc- tures, tin oxide nanowires have been shown to have... power consumption [15]. It has been reported by several authors that the performances of gas sensors can be enhanced by increasing the specific surface area by way of achieving nanoparticles [16, 17] and by incorporation of noble metals [18...

  2. Deposit of thin films for Tokamaks conditioning

    International Nuclear Information System (INIS)

    Valencia A, R.

    2006-01-01

    discharge plasma, created in a calibrated mixture of methane-hydrogen during the hydrogenated amorphous carbon film deposit on the vessel wall of Novillo tokamak, were determined by mass spectrometry. By way of measuring the emission lines of the carbon and oxygen impurities in intense discharges, the time required by the plasma to interact with the wall was estimated. In addition to it, the temporal conduct of the emission line intensity of these impurities was observed by means of an intensified CCD detector. Once an ∼ 10 % of helium was introduced in the operating gas of the tokamak discharges, a 25-42 eV time variation of the electron temperature was measured using the intensity ratio technique. (Author)

  3. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Carlier, Thibault [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Saitzek, Sébastien [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Méar, François O., E-mail: francois.mear@univ-lille1.fr [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Blach, Jean-François; Ferri, Anthony [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Huvé, Marielle; Montagne, Lionel [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France)

    2017-03-01

    Highlights: • Successfully deposition of a glassy thin film by PLD. • A good homogeneity and stoichiometry of the coating. • Influence of the deposition temperature on the glassy thin-film structure. - Abstract: In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  4. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  5. Picosecond and subpicosecond pulsed laser deposition of Pb thin films

    Directory of Open Access Journals (Sweden)

    F. Gontad

    2013-09-01

    Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

  6. Silicon nitride films deposited with an electron beam created plasma

    Science.gov (United States)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-01-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  7. Plasma deposition of polymer composite films incorporating nanocellulose whiskers

    Science.gov (United States)

    Samyn, P.; Airoudj, A.; Laborie, M.-P.; Mathew, A. P.; Roucoules, V.

    2011-11-01

    In a trend for sustainable engineering and functionalization of surfaces, we explore the possibilities of gas phase processes to deposit nanocomposite films. From an analysis of pulsed plasma polymerization of maleic anhydride in the presence of nanocellulose whiskers, it seems that thin nanocomposite films can be deposited with various patterns. By specifically modifying plasma parameters such as total power, duty cycle, and monomer gas pressure, the nanocellulose whiskers are either incorporated into a buckled polymer film or single nanocellulose whiskers are deposited on top of a polymeric film. The density of the latter can be controlled by modifying the exact positioning of the substrate in the reactor. The resulting morphologies are evaluated by optical microscopy, AFM, contact angle measurements and ellipsometry.

  8. UV laser deposition of metal films by photogenerated free radicals

    Science.gov (United States)

    Montgomery, R. K.; Mantei, T. D.

    1986-01-01

    A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

  9. Surface tension gradient enhanced thin film flow for particle deposition

    Science.gov (United States)

    Gilchrist, James; Joshi, Kedar; Muangnapoh, Tanyakorn; Stever, Michael

    2015-11-01

    We investigate the effect of varying concentration in binary mixtures of water and ethanol as the suspending medium for micron-scale silica particles on convective deposition. By pulling a suspension along a substrate, a thin film is created that results in enhanced evaporation of the solvent and capillary forces that order particles trapped in the thin film. In pure water or pure ethanol, assembly and deposition is easily understood by a simply flux balance first developed by Dimitrov and Nagayama in 1996. In solvent mixtures having only a few percent of ethanol, Marangoni stresses from the concentration gradient set by unbalanced solvent evaporation dominates the thin film flow. The thin film profile is similar to that found in ``tears of wine'' where the particles are deposited in the thin film between the tears and the reservoir. A simple model describes the 10x increase of deposition speed found in forming well-ordered monolayers of particles. At higher ethanol concentrations, lateral instabilities also generated by Marangoni stresses cause nonuniform deposition in the form of complex streaks that mirror sediment deposits in larger scale flows. We acknowledge funding from the NSF Scalable Nanomanufacturing Program under grant No. 1120399.

  10. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4- ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness (∼ 0.9 nm) and offered sheet resistance down to 230 Ω/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (η) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138°, whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60°. Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications. © 2010 American Chemical Society.

  11. Continuous, highly flexible, and transparent graphene films by chemical vapor deposition for organic photovoltaics.

    Science.gov (United States)

    Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W; Ryu, Koungmin; Thompson, Mark E; Zhou, Chongwu

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness ( approximately 0.9 nm) and offered sheet resistance down to 230 Omega/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (eta) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138 degrees , whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60 degrees . Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications.

  12. Optical and electrical properties of nickel xanthate thin films

    Indian Academy of Sciences (India)

    Keywords. Nickel xanthate thin film; organometallic thin film; chemical bath deposition. Abstract. Nickel xanthate thin films (NXTF) were successfully deposited by chemical bath deposition, on to amorphous glass substrates, as well as on - and -silicon, indium tin oxide and poly(methyl methacrylate). The structure of the ...

  13. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  14. Sputter deposited Terfenol-D thin films for multiferroic applications

    Directory of Open Access Journals (Sweden)

    K. P. Mohanchandra

    2015-09-01

    Full Text Available In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011 cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10−6.

  15. Heat treatment of cathodic arc deposited amorphous hard carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S.; Ager, J.W. III; Brown, I.G. [and others

    1997-02-01

    Amorphous hard carbon films of varying sp{sup 2}/sp{sup 3} fractions have been deposited on Si using filtered cathodic are deposition with pulsed biasing. The films were heat treated in air up to 550 C. Raman investigation and nanoindentation were performed to study the modification of the films caused by the heat treatment. It was found that films containing a high sp{sup 3} fraction sustain their hardness for temperatures at least up to 400 C, their structure for temperatures up to 500 C, and show a low thickness loss during heat treatment. Films containing at low sp{sup 3} fraction graphitize during the heat treatment, show changes in structure and hardness, and a considerable thickness loss.

  16. Structural characterization of chemically deposited PbS thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.A.; Gonzalez-Alfaro, Y.; Larramendi, E.M.; Fonseca Filho, H.D.; Maia da Costa, M.E.H.; Freire, F.L.; Prioli, R.; Avillez, R.R. de; Silveira, E.F. da; Calzadilla, O.; Melo, O. de; Pedrero, E.; Hernandez, E.

    2007-01-01

    Polycrystalline thin films of lead sulfide (PbS) grown using substrate colloidal coating chemical bath depositions were characterized by RBS, XPS, AFM and GIXRD techniques. The films were grown on glass substrates previously coated with PbS colloidal particles in a polyvinyl alcohol solution. The PbS films obtained with the inclusion of the polymer showed non-oxygen-containing organic contamination. All samples maintained the Pb:S 1:1 stoichiometry throughout the film. The amount of effective nucleation centers and the mean grain size have being controlled by the substrate colloidal coating. The analysis of the polycrystalline PbS films showed that a preferable (1 0 0) lattice plane orientation parallel to the substrate surface can be obtained using a substrate colloidal coating chemical bath deposition, and the orientation increases when a layer of colloid is initially dried on the substrate

  17. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

    Science.gov (United States)

    Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

    2018-01-01

    Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (Eg) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In2O3, and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In2O3 thin-film transistors with an Al2O3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm2/Vṡs, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 107. This was ascribed to passivation of oxygen vacancies in the device channel.

  18. Room temperature deposition of magnetite thin films on organic substrate

    International Nuclear Information System (INIS)

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  19. Nanocrystalline Tin Oxide Nanofibers Deposited by a Novel Focused Electrospinning Method. Application to the Detection of TATP Precursors

    Directory of Open Access Journals (Sweden)

    José Pedro Santos

    2014-12-01

    Full Text Available A new method of depositing tin dioxide nanofibers in order to develop chemical sensors is presented. It involves an electrospinning process with in-plane electrostatic focusing over micromechanized substrates. It is a fast and reproducible method. After an annealing process, which can be performed by the substrate heaters, it is observed that the fibers are intertwined forming porous networks that are randomly distributed on the substrate. The fiber diameters oscillate from 100 nm to 200 nm and fiber lengths reach several tens of microns. Each fiber has a polycrystalline structure with multiple nano-grains. The sensors have been tested for the detection of acetone and hydrogen peroxide (precursors of the explosive triacetone triperoxide, TATP in air in the ppm range. High and fast responses to these gases have been obtained.

  20. Nanocrystalline tin oxide nanofibers deposited by a novel focused electrospinning method. Application to the detection of TATP precursors.

    Science.gov (United States)

    Santos, José Pedro; Fernández, Maria Jesús; Fontecha, José Luis; Matatagui, Daniel; Sayago, Isabel; Horrillo, Maria Carmen; Gracia, Isabel

    2014-12-16

    A new method of depositing tin dioxide nanofibers in order to develop chemical sensors is presented. It involves an electrospinning process with in-plane electrostatic focusing over micromechanized substrates. It is a fast and reproducible method. After an annealing process, which can be performed by the substrate heaters, it is observed that the fibers are intertwined forming porous networks that are randomly distributed on the substrate. The fiber diameters oscillate from 100 nm to 200 nm and fiber lengths reach several tens of microns. Each fiber has a polycrystalline structure with multiple nano-grains. The sensors have been tested for the detection of acetone and hydrogen peroxide (precursors of the explosive triacetone triperoxide, TATP) in air in the ppm range. High and fast responses to these gases have been obtained.

  1. Nanocrystalline Tin Oxide Nanofibers Deposited by a Novel Focused Electrospinning Method. Application to the Detection of TATP Precursors

    Science.gov (United States)

    Santos, José Pedro; Fernández, Maria Jesús; Fontecha, José Luis; Matatagui, Daniel; Sayago, Isabel; Horrillo, Maria Carmen; Gracia, Isabel

    2014-01-01

    A new method of depositing tin dioxide nanofibers in order to develop chemical sensors is presented. It involves an electrospinning process with in-plane electrostatic focusing over micromechanized substrates. It is a fast and reproducible method. After an annealing process, which can be performed by the substrate heaters, it is observed that the fibers are intertwined forming porous networks that are randomly distributed on the substrate. The fiber diameters oscillate from 100 nm to 200 nm and fiber lengths reach several tens of microns. Each fiber has a polycrystalline structure with multiple nano-grains. The sensors have been tested for the detection of acetone and hydrogen peroxide (precursors of the explosive triacetone triperoxide, TATP) in air in the ppm range. High and fast responses to these gases have been obtained. PMID:25521384

  2. Effect of tin doping on the optical properties of indium oxide films by a spray pyrolysis method

    International Nuclear Information System (INIS)

    Ibrahim Abu Talib; Muhammad Mat Salleh; Muhammad Yahya; Mod Noor Bader Sher

    1993-01-01

    Thin films of stannum doped indium oxide were deposited on glass by a X-ray pyrolysis method. The substrate temperature and the rate of flow of the carrier gas were fixed at 450 0 C and 2.5 litre/minute respectively during deposition. The dependence of the optical properties of the films on the doping concentration was studied. It is found that the transmission of the visible wavelengths (300 to 800 nm) through the films increases around 5% from 74.9% as the film was doped with 10% stannum. It is also found that the optical energy bandgap increases 0.2 eV from 3.16 to 3.36 eV by doping the film with 10% stannum. The increase is attributed to the Bernstein-Moss (1) and self-energy (2) effects

  3. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel

    2014-06-11

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict such changes as an alternative to fracture mechanics formulations. Our predictions are obtained by assuming that there are no flaws at the onset of loading as opposed to the assumptions of fracture mechanics approaches. We calibrate the crack onset strain and the damage model based on experimental data reported in the literature. We predict crack density and changes in electrical resistance as a function of the damage induced in the films. We implement our model in the commercial finite element software ABAQUS using a user subroutine UMAT. We obtain fair to good agreement with experiments. © The Author(s) 2014 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

  4. Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

    KAUST Repository

    Kumar, S. R. Sarath

    2010-09-15

    Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

  5. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

  6. Nanoscaled tin dioxide films processed from organotin-based hybrid materials: an organometallic route toward metal oxide gas sensors

    Science.gov (United States)

    Renard, Laetitia; Babot, Odile; Saadaoui, Hassan; Fuess, Hartmut; Brötz, Joachim; Gurlo, Aleksander; Arveux, Emmanuel; Klein, Andreas; Toupance, Thierry

    2012-10-01

    Nanocrystalline tin dioxide (SnO2) ultra-thin films were obtained employing a straightforward solution-based route that involves the calcination of bridged polystannoxane films processed by the sol-gel process from bis(triprop-1-ynylstannyl)alkylene and -arylene precursors. These films have been thoroughly characterized by FTIR, contact angle measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force (AFM) and scanning electron (SEM) microscopies. Annealing at a high temperature gave 30-35 nm thick cassiterite SnO2 films with a mean crystallite size ranging from 4 to 7 nm depending on the nature of the organic linker in the distannylated compound used as a precursor. In the presence of H2 and CO gases, these layers led to highly sensitive, reversible and reproducible responses. The sensing properties were discussed in regard to the crystallinity and porosity of the sensing body that can be tuned by the nature of the precursor employed. Organometallic chemistry combined with the sol-gel process therefore offers new possibilities toward metal oxide nanostructures for the reproducible and sensitive detection of combustible and toxic gases.Nanocrystalline tin dioxide (SnO2) ultra-thin films were obtained employing a straightforward solution-based route that involves the calcination of bridged polystannoxane films processed by the sol-gel process from bis(triprop-1-ynylstannyl)alkylene and -arylene precursors. These films have been thoroughly characterized by FTIR, contact angle measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force (AFM) and scanning electron (SEM) microscopies. Annealing at a high temperature gave 30-35 nm thick cassiterite SnO2 films with a mean crystallite size ranging from 4 to 7 nm depending on the nature of the organic linker in the distannylated compound used as a precursor. In the presence of H2 and CO gases, these layers led to highly sensitive, reversible and reproducible

  7. Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates

    International Nuclear Information System (INIS)

    Yin Xuesong; Tang Wu; Weng Xiaolong; Deng Longjiang

    2009-01-01

    Amorphous or weakly crystalline indium tin oxide (ITO) thin film samples have been prepared on polymethylmethacrylate and polyethylene terephthalate substrates by RF-magnetron sputtering at a low substrate temperature. The surface morphological and electrical properties of the ITO layers were measured by atomic force microscopy (AFM) and a standard four-point probe measurement. The effect of surface morphology on the resistivity of ITO thin films was studied, which presented some different variations from crystalline films. Then, a simplified film system model, including the substrate, continuous ITO layer and ITO surface grain, was proposed to deal with these correlations. Based on this thin film model and the AFM images, a quadratic potential was introduced to simulate the characteristics of the ITO surface morphology, and the classical Kronig-Penney model, the semiconductor electrical theory and the modified Neugebauer-Webb model were used to expound the detailed experimental results. The modelling equation was highly in accord with the experimental variations of the resistivity on the characteristics of the surface morphology.

  8. Synthesis of nano-structured tin oxide thin films with faster response to LPG and ammonia by spray pyrolysis

    Science.gov (United States)

    PrasannaKumari, K.; Thomas, Boben

    2018-01-01

    Nanostructured SnO2 thin film have been efficiently fabricated by spray pyrolysis using atomizers of different types. The structure and morphology of as-prepared samples are investigated by techniques such as x-ray diffraction, and field-emission scanning electron microscopy. Significant morphological changes are observed in films by modifying the precursor atomization as a result of change of spray device. The optical characterization indicates that change in atomization, affects the absorbance and the band gap, following the varied crystallite size. Gas sensing investigations on ultrasonically prepared tin oxide films show NH3 response at operating temperatures lower down to 50 °C. For 1000 ppm of LPG the response at 350 °C for air blast atomizer film is about 99%, with short response and recovery times. The photoluminescence emmision spectra reveal the correlation between atomization process and the quantity of oxygen vacancies present in the samples. The favorable size reduction in microstructure with good crystallinity with slight change in lattice properties suggest their scope in gas sensing applications. On the basis of these characterizations, the mechanism of LPG and NH3 gas sensing of nanostructured SnO2 thin films has been proposed.

  9. Femtosecond pulsed laser deposition of cobalt ferrite thin films

    Science.gov (United States)

    Dascalu, Georgiana; Pompilian, Gloria; Chazallon, Bertrand; Caltun, Ovidiu Florin; Gurlui, Silviu; Focsa, Cristian

    2013-08-01

    The insertion of different elements in the cobalt ferrite spinel structure can drastically change the electric and magnetic characteristics of CoFe2O4 bulks and thin films. Pulsed Laser Deposition (PLD) is a widely used technique that allows the growth of thin films with complex chemical formula. We present the results obtained for stoichiometric and Gadolinium-doped cobalt ferrite thin films deposited by PLD using a femtosecond laser with 1 kHz repetition rate. The structural properties of the as obtained samples were compared with other thin films deposited by ns-PLD. The structural characteristics and chemical composition of the samples were investigated using profilometry, Raman spectroscopy, X-Ray diffraction measurements and ToF-SIMS analysis. Cobalt ferrite thin films with a single spinel structure and a preferential growth direction have been obtained. The structural analysis results indicated the presence of internal stress for all the studied samples. By fs-PLD, uniform thin films were obtained in a short deposition time.

  10. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  11. Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

    Science.gov (United States)

    Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

    2018-04-01

    Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

  12. Structural and optical properties of WO{sub 3} films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Y.S., E-mail: yshzou75@gmail.com; Zhang, Y.C.; Lou, D.; Wang, H.P.; Gu, L.; Dong, Y.H.; Dou, K.; Song, X.F.; Zeng, H.B.

    2014-01-15

    Highlights: • Monoclinic WO{sub 3} films were prepared by pulsed laser deposition. • The WO{sub 3} films exhibited preferred (0 0 2) orientation at elevated temperature. • The structure and optical properties of WO{sub 3} films depended on substrate temperature. • The optical band gap of WO{sub 3} films decreased as substrate temperature increased. -- Abstract: Tungsten oxide (WO{sub 3}) films were prepared on Si (1 0 0) and fused silica substrates by pulsed laser deposition (PLD). The effects of substrate temperature on the morphology, microstructure and optical properties of WO{sub 3} films were investigated by scanning electron microscopy, atomic force microscopy, X-ray diffraction, Raman spectra and UV–visible spectrophotometer. It was found that the microstructure, morphology and optical properties strongly depend on the substrate temperature. The X-ray diffraction and Raman results indicate that the amorphous WO{sub 3} films are obtained at substrate temperatures below 200 °C whereas the films grown above 300 °C exhibit predominantly (0 0 2) plane orientation, representing the monoclinic structure. The surface roughness, film crystallinity and grain size of the films increase with increasing substrate temperature. The films prepared at substrate temperatures ranging from 300 to 600 °C exhibit high averaged transparency over 60% in the visible region. The optical band gaps of the films are found to decrease monotonically from 3.22 to 3.05 eV as the substrate temperature increases from 200 to 600 °C due to the crystallization of deposited WO{sub 3} film.

  13. Growth, surface treatment and characterization of polycrystalline lead iodide thick films prepared using close space deposition technique

    International Nuclear Information System (INIS)

    Zhu, Xinghua; Sun, Hui; Yang, Dingyu; Zheng, Xiaolin

    2012-01-01

    Lead iodide (PbI 2 ) polycrystalline thick films were fabricated on glass substrates with a conductive indium–tin-oxide layer using a close space deposition technique. The morphology of the as-deposited PbI 2 films is typically and highly oriented polycrystalline structure, made up of microcrystal platelets upright on the substrate plane. Two techniques including the surface mechanical cutting and after-growth cadmium telluride coating were employed to improve the films′ surface properties. It was shown that both of the film surface treatment methods markedly decreased the dark current of PbI 2 films. The photo-to-dark current ratio of about 2.05 under 241 Am γ-ray source with activity of 2.78 μCi irradiation was obtained from the film treated using both surface cutting and after-growth CdTe coating. Charge transport characteristics of these films were measured and the hole mobility 7.7×10 −2 –1.67×10 −1 cm 2 /V s was estimated.

  14. Plasma deposited fluorinated films on porous membranes

    Energy Technology Data Exchange (ETDEWEB)

    Gancarz, Irena [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Bryjak, Marek, E-mail: marek.bryjak@pwr.edu.pl [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawski, Jan; Wolska, Joanna [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawa, Joanna; Kujawski, Wojciech [Nicolaus Copernicus University, Faculty of Chemistry, 7 Gagarina St., 87-100 Torun (Poland)

    2015-02-01

    75 KHz plasma was used to modify track etched poly(ethylene terephthalate) membranes and deposit on them flouropolymers. Two fluorine bearing monomers were used: perflourohexane and hexafluorobenzene. The modified surfaces were analyzed by means of attenuated total reflection infra-red spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and wettability. It was detected that hexaflourobenxene deposited to the larger extent than perflourohaxane did. The roughness of surfaces decreased when more fluoropolymer was deposited. The hydrophobic character of surface slightly disappeared during 20-days storage of hexaflourobenzene modified membrane. Perfluorohexane modified membrane did not change its character within 120 days after modification. It was expected that this phenomenon resulted from post-reactions of oxygen with radicals in polymer deposits. The obtained membranes could be used for membrane distillation of juices. - Highlights: • Plasma deposited hydrophobic layer of flouropolymers. • Deposition degree affects the surface properties. • Hydrohilization of surface due to reaction of oxygen with entrapped radicals. • Possibility to use modified porous membrane for water distillation and apple juice concentration.

  15. A simple approach to deposit MnS thin films

    Science.gov (United States)

    Girish, M.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-01

    Manganese sulphide (MnS) thin films were prepared by nebulized spray pyrolysis technique. Manganese acetate and thiourea was taken as the precursor solution. The films were deposited at various molar ratios (from 1:1 to 1:3) to tune its physical properties. The structural and optical properties of as-deposited and annealed samples were studied. The evaluated band gap values of as-deposited and annealed samples (1:1) are 3.05eV and 3.32eV, respectively. The gradual reduction in band gap of annealed films with increasing molar ratio revealed the enhancement in crystallinity. The photoluminescence spectra also affirm the above results.

  16. Matrix assisted pulsed laser deposition of melanin thin films

    Science.gov (United States)

    Bloisi, F.; Pezzella, A.; Barra, M.; Chiarella, F.; Cassinese, A.; Vicari, L.

    2011-07-01

    Melanins constitute a very important class of organic pigments, recently emerging as a potential material for a new generation of bioinspired biocompatible electrically active devices. In this paper, we report about the deposition of synthetic melanin films starting from aqueous suspensions by matrix assisted pulsed laser evaporation (MAPLE). In particular, we demonstrate that it is possible to deposit melanin films by MAPLE even if melanin (a) is not soluble in water and (b) absorbs light from UV to IR. AFM images reveal that the film surface features are highly depending on the deposition parameters. UV-VIS and FTIR spectra show both the optical properties and the molecular structure typical of melanins are preserved.

  17. Ultraviolet laser deposition of graphene thin films without catalytic layers

    KAUST Repository

    Sarath Kumar, S. R.

    2013-01-09

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  18. Supramolecular structure of a perylene derivative in thin films deposited by physical vapor deposition

    International Nuclear Information System (INIS)

    Fernandes, Jose D.; Aoki, Pedro H.B.; Constantino, Carlos J.J.; Junior, Wagner D.M.; Teixeira, Silvio R.

    2014-01-01

    Full text: Thin films of a perylene derivative, the bis butylimido perylene (BuPTCD), were produced using thermal evaporation (PVD, physical vapor deposition). The main objective is to investigate the supramolecular structure of the BuPTCD in these PVD films, which implies to control the thickness and to determine the molecular organization, morphology at micro and nanometer scales and crystallinity. This supramolecular structure is a key factor in the optical and electrical properties of the film. The ultraviolet-visible absorption revealed an uniform growth of the PVD films. The optical and atomic force microscopy images showed a homogeneous surface of the film at micro and nanometer scales. A preferential orientation of the molecules in the PVD films was determined via infrared absorption. The X-ray diffraction showed that both powder and PVD film are in the crystalline form. (author)

  19. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  20. Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition

    CERN Document Server

    Kang, S Y; Lee, S K; Hwang, C S; Kim, H J

    2000-01-01

    Ru thin films were deposited at 300 approx 400 .deg. C by using Ru(C sub 5 H sub 4 C sub 2 H sub 5) sub 2 (Ru(EtCp) sub 2) as a precursor and low-pressure metalorganic chemical vapor deposition. The addition of O sub 2 gas was essential to form Ru thin films. The deposition rates of the films were about 200 A/min. For low oxygen addition and high substrate temperature, RuO sub 2 phases were formed. Also, thermodynamic calculations showed that all the supplied oxygen was consumed to oxidize carbon and hydrogen, cracked from the precursor ligand, rather than Ru. Thus, metal films could be obtained There was an optimum oxygen to precursor ratio at which the pure Ru phase could be obtained with minimum generation of carbon and RuO sub 2

  1. The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Hwang, Deuk-Kyu; Misra, Mirnmoy; Lee, Ye-Eun; Baek, Sung-Doo; Myoung, Jae-Min; Lee, Tae Il

    2017-01-01

    Highlights: • Indium tin oxide thin film with about 41 nm thickness was obtained by the sol-gel process. • Thin film exhibited low resistivity. • Sheet resistance of thin film decreases with Ar plasma treatment time. • Ar plasma treatment on thin film does not alter the crystal structure and optical properties of the ITO thin-film. • There is no significant change in oxygen vacancies after 20 min of plasma treatment. - Abstract: Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the crystal structure, surface morphology, or optical properties of the ITO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the concentration of oxygen vacancies in the film dramatically increased with the plasma treatment time. Thus, we concluded that the decrease in the sheet resistance was caused by the increase in the oxygen vacancy concentration in the film. Furthermore, to verify how the concentration of oxygen vacancies in the film increased with the Ar plasma treatment time, cumulative and continuous plasma treatments were conducted. The oxygen vacancies were found to be created by surface heating via the outward thermal diffusion of oxygen atoms from inside the film.

  2. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    International Nuclear Information System (INIS)

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

    2002-01-01

    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  3. Glancing angle deposition of thin films engineering the nanoscale

    CERN Document Server

    Hawkeye, Matthew M; Brett, Michael J

    2014-01-01

    This book provides a highly practical treatment of GLAD technology, gathering existing procedures, methodologies, and experimental designs into a single, cohesive volume which will be useful both as a ready reference for those in the field and as a definitive guide for those entering it. It covers: History and development of GLAD techniquesProperties and Characterization of GLAD fabricated filmsDesign and engineering of optical GLAD films including fabrication and testingPost-deposition processing and integrationDeposition systems for GLAD fabrication Also includes a patent survey of relevant literature and a survey of GLAD's wide range of material properties and diverse applications.

  4. High Tc superconducting thin film deposition by excimer laser ablation

    International Nuclear Information System (INIS)

    Fogarassy, E.; Fuchs, C.; Stoquert, J.P.; Siffert, P.; Defourneau, R.M.; Perriere, J.; Rochet, F.; Rosenman, I.; Simon, C.

    1988-01-01

    The possibility to deposite YBaCuO and BiSrCaCuO thin films by laser evaporation in a clean environment has been studied using a pulsed ArF excimer laser. The as-deposited thin films were converted into the superconducting phase by a subsequent anneal in oxygen in the 850-900 0 C temperature range. The onset critical temperatures were respectively 85 and 92 K with a zero resistance at 83 K for BiSrCaCuO [fr

  5. Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duta, L. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, 409 Atomistilor Street, Magurele (Romania); Oktar, F.N. [Department of Bioengineering, Faculty of Engineering, Marmara University, Goztepe, Istanbul 34722 (Turkey); Department of Medical Imaging Technics, Vocational School of Health Services, Marmara University, Uskudar, Istanbul 34668 (Turkey); Nanotechnology and Biomaterials Application and Research Centre, Marmara University, Istanbul (Turkey); Stan, G.E. [National Institute of Materials Physics, 105 Bis Atomistilor Street, Magurele (Romania); Popescu-Pelin, G.; Serban, N.; Luculescu, C. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, 409 Atomistilor Street, Magurele (Romania); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, 409 Atomistilor Street, Magurele (Romania)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer HA coatings synthesized by pulsed laser deposition. Black-Right-Pointing-Pointer Comparative study of commercial vs. animal origin materials. Black-Right-Pointing-Pointer HA coatings of animal origin were rougher and more adherent to substrates. Black-Right-Pointing-Pointer Animal origin films can be considered as promising candidates for implant coatings. - Abstract: We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of {approx}2 {mu}m. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical-chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

  6. Effect of Mn doping on the electrical and optical properties of SnO{sub 2} thin films deposited by chemical spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Indira Gandhi, T. [Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Ramesh Babu, R., E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Ramamurthi, K. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur 603 203, Tamil Nadu (India); Arivanandhan, M. [Nanodevices and Nanomaterials Division, Research Institute of Electronics, Shizuoka University, Hamamatsu 432 8011 (Japan)

    2016-01-01

    Manganese doped tin oxide (Mn:SnO{sub 2}) thin films were deposited by spray pyrolysis technique adding various concentrations of manganese acetate (0–8 at.%) in the spray solution of tin chloride. X-ray diffraction studies show the preferred growth along (301) direction for 0.0–2.0 at.% concentration of manganese acetate in the spray solution. Higher doping concentration of manganese acetate (4 and 8 at.%) in the solution shifts the preferred growth direction along (200) plane. Scanning electron microscopic studies reveal the change in the surface morphology of the films due to various levels of Mn doping. X-ray photoelectron spectroscopic analysis shows that in the prepared thin film manganese atoms exist in Mn{sup 3+} state. The sheet resistance of SnO{sub 2} film decreases from ~ 23.5 Ω/□ to 22.8 Ω/□ for 0.4 at.% doping concentration and increases with increasing Mn concentration in the solution. The average optical transmittance of SnO{sub 2} thin film increases from 34% to 55% in the wavelength region of 550–850 nm with increase in Mn concentration. Mn concentration in the films influences the intensity of the photoluminescence emission peak observed for SnO{sub 2} film at 398 nm. - Highlights: • Mn:SnO2 thin films deposited with different doping concentration by spray pyrolysis technique • Structural information confirms that all the films are polycrystalline and tetragonal crystal structure. • XPS studies confirm the oxidation state of Mn (3 +) and Sn (4 +) in Mn:SnO{sub 2} thin film. • 0.4 at.% of Mn:SnO{sub 2} thin film shows lowest sheet resistance 22.8 Ω/□. • Optical band gap of 1.2 at.% Mn:SnO{sub 2} thin film is about 3.70 eV.

  7. Electrocatalytic performance of Pt nanoparticles sputter-deposited on indium tin oxide toward methanol oxidation reaction: The particle size effect

    Science.gov (United States)

    Ting, Chao-Cheng; Chao, Chih-Hsuan; Tsai, Cheng Yu; Cheng, I.-Kai; Pan, Fu-Ming

    2017-09-01

    We sputter-deposited Pt nanoparticles with an average size ranging from 2.0 nm to 8.5 nm on the indium-tin oxide (ITO) glass substrate, and studied the effect of the size of Pt nanoparticles on electrocatalytic activity of the Pt/ITO electrode toward methanol oxidation reaction (MOR) in acidic solution. X-ray photoelectron spectroscopy (XPS) reveals an interfacial oxidized Pt layer present between Pt nanoparticles and the ITO substrate, which may modify the surface electronic structure of Pt nanoparticles and thus influences the electrocatalytic properties of the Pt catalyst toward MOR. According to electrochemical analyses, smaller Pt nanoparticles exhibit slower kinetics for CO electrooxidation and MOR. However, a smaller particle size enables better CO tolerance because the bifunctional mechanism is more effective on smaller Pt nanoparticles. The electrocatalytic activity decays rapidly for Pt nanoparticles with a size smaller than 3 nm and larger than 8 nm. The rapid activity decay is attributed to Pt dissolution for smaller nanoparticles and to CO poisoning for larger ones. Pt nanoparticles of 5-6 nm in size loaded on ITO demonstrate a greatly improved electrocatalytic activity and stability compared with those deposited on different substrates in our previous studies.

  8. Corrosion resistance of siloxane–poly(methyl methacrylate) hybrid films modified with acetic acid on tin plate substrates: Influence of tetraethoxysilane addition

    Energy Technology Data Exchange (ETDEWEB)

    Kunst, S.R.; Cardoso, H.R.P. [LAPEC, Federal University of Rio Grande do Sul – UFRGS, Avenida Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Oliveira, C.T. [ICET, University Feevale, RS-239, 2755 Novo Hamburgo, RS (Brazil); Santana, J.A.; Sarmento, V.H.V. [Department of Chemistry, Federal University of Sergipe – UFS, Av. Vereador Olímpio Grande s/n, Centro, Itabaiana, SE (Brazil); Muller, I.L. [LAPEC, Federal University of Rio Grande do Sul – UFRGS, Avenida Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Malfatti, C.F., E-mail: celia.malfatti@ufrgs.br [LAPEC, Federal University of Rio Grande do Sul – UFRGS, Avenida Bento Gonçalves, 9500 Porto Alegre, RS (Brazil)

    2014-04-01

    Highlights: • Siloxane–PMMA film was produced by dip-coating on tin plate substrate. • It was evaluated the influence of (TEOS) addition on siloxane–PMMA hybrid films. • Siloxane–PMMA films without TEOS presented a regular coverage and lowest roughness. • The TEOS addition decrease the corrosion resistance of siloxane–PMMA films. • Siloxane–PMMA without TEOS presented is higher durability in the film wear test. - Abstract: The aim of this paper is to study the corrosion resistance of hybrid films. Tin plate was coated with a siloxane–poly (methyl methacrylate) (PMMA) hybrid film prepared by sol–gel route with covalent bonds between the organic (PMMA) and inorganic (siloxane) phases obtained by hydrolysis and polycondensation of 3-(trimethoxysilylpropyl) methacrylate (TMSM) and polymerization of methyl methacrylate (MMA) using benzoyl peroxide (BPO) as a thermic initiator. Hydrolysis reactions were catalyzed by acetic acid solution avoiding the use of chlorine or stronger acids in the film preparation. The effect of the addition of tetraethoxysilane (TEOS) on the protective properties of the film was evaluated. The hydrophobicity of the film was determined by contact angle measurements, and the morphology was evaluated by scanning electron microscopy (SEM) and profilometry. The local nanostructure was investigated by Fourier transform infrared spectroscopy (FT-IR). The electrochemical behavior of the films was assessed by open circuit potential monitoring, potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) measurements in a 0.05 M NaCl solution. The mechanical behavior was evaluated by tribology. The results highlighted that the siloxane–PMMA hybrid films modified with acetic acid are promising anti-corrosive coatings that acts as an efficient diffusion barrier, protecting tin plates against corrosion. However, the coating properties were affected by the TEOS addition, which contributed for the thickness increase

  9. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    Science.gov (United States)

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  10. Experiment and equipment of depositing diamond films with CVD system

    International Nuclear Information System (INIS)

    Xie Erqing; Song Chang'an

    2002-01-01

    CVD (chemical vapor deposition) emerged in recent years is a new technique for thin film deposition, which play a key role in development of modern physics. It is important to predominate the principle and technology of CVD for studying modern physics. In this paper, a suit of CVD experimental equipment for teaching in college physics is presented, which has simple design and low cost. The good result was gained in past teaching practices

  11. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  12. Thin NiTi Films Deposited on Graphene Substrates

    Science.gov (United States)

    Hahn, S.; Schulze, A.; Böhme, M.; Hahn, T.; Wagner, M. F.-X.

    2017-03-01

    We present experimental results on the deposition of Nickel Titanium (NiTi) films on graphene substrates using a PVD magnetron sputter process. Characterization of the 2-4 micron thick NiTi films by electron microscopy, electron backscatter diffraction, and transmission electron microscopy shows that grain size and orientation of the thin NiTi films strongly depend on the type of combination of graphene and copper layers below. Our experimental findings are supported by density functional theory calculations: a theoretical estimation of the binding energies of different NiTi-graphene interfaces is in line with the experimentally determined microstructural features of the functional NiTi top layer.

  13. Pulsed laser deposition of hydroxyapatite thin films

    Czech Academy of Sciences Publication Activity Database

    Koch, C.F.; Johnson, S.; Kumar, D.; Jelínek, Miroslav; Chrisey, D.B.; Doraiswamy, A.; Jin, C.; Narayan, R.J.; Mihailescu, I. N.

    2007-01-01

    Roč. 27, - (2007), s. 484-494 ISSN 0928-4931 Institutional research plan: CEZ:AV0Z10100522 Keywords : hydroxyapatite * pulsed laser deposition * bioactive ceramics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.486, year: 2007

  14. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  15. Thermoluminescence of thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Escobar A, L.; Camps, E.; Arrieta, A.; Romero, S.; Gonzalez, P.R.; Olea M, O.; Diaz E, R.

    2003-01-01

    Materials in thin film form have received great attention in the last few years mainly because of their singular properties, which may differ significantly from their bulk attributes making them attractive for a wide variety of applications. In particular, thermoluminescence (Tl) properties of thin films have been studied recently owing to their potential applications in detection for both ionizing and non ionizing radiation. The aim of the present work is to report the synthesis and characterization of C Nx, aluminum oxide and titanium oxide thin films. Thermoluminescence response of the obtained thin films was studied after subject thin films to UV radiation (254 nm) as well as to gamma radiation (Co-60). Thermoluminescence glow curves exhibited a peak centered at 150 C for CN x whereas for titanium oxide the glow curve shows a maximum peaking at 171 C. Characterization of the physical properties of the deposited materials is presented. (Author)

  16. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  17. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  18. Vis-Near-Infrared Photodetectors Based on Methyl Ammonium Lead Iodide Thin Films by Pulsed Laser Deposition

    Science.gov (United States)

    Patel, Nagabhushan; Dias, Sandra; Krupanidhi, S. B.

    2018-04-01

    Organic-inorganic hybrid perovskite materials are considered as promising candidates for emerging thin-film photodetectors. In this work, we discuss the application of the CH3NH3PbI3 thin films by pulsed laser deposition for photodetection applications. With this method, we obtained good perovskite film coverage on fluorine-doped tin oxide-coated substrates and observed wel- developed grains. The films showed no sign of degradation over several months of testing. We investigated the surface morphology and surface roughness of the films by field emission scanning electron microscopy and atomic force microscopy. The optical response of the films was studied using ultraviolet-visible and photoluminescence spectroscopy. We carried out a study on the solar and infrared photodetection of CH3NH3PbI3 thin films. The values of the responsivity, sensitivity, external quantum efficiency and specific detectivity under 1 sun illumination and 0.7 V bias were 105.4 A/W, 1.9, 2.38 × 104% and 1.5 × 1012 Jones, respectively.

  19. Highly conducting and transparent sprayed indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

    1998-03-01

    Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

  20. Electro-optical characteristics of indium tin oxide (ITO) films: effect of thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Morgan, D.V.; Salehi, A.; Aliyu, Y.H.; Bunce, R.W. [University of Wales College of Cardiff (United Kingdom). School of Electrical, Electronics and System Engineering

    1996-02-01

    The effect of thermal annealing on the electrical and optical characteristics of ITO films prepared by reactive sputtering and thermal evaporation have been studied. The effect of the thermal annealing is to improve the conductivity and the optical transmission in the shorter wavelength region. The conductivity of the films increases with annealing temperature, this behaviour is associated with grain growth in the film. (author)

  1. In situ measurement of conductivity during nanocomposite film deposition

    International Nuclear Information System (INIS)

    Blattmann, Christoph O.; Pratsinis, Sotiris E.

    2016-01-01

    Highlights: • Flame-made nanosilver dynamics are elucidated in the gas-phase & on substrates. • The resistance of freshly depositing nanosilver layers is monitored. • Low T g polymers facilitate rapid synthesis of conductive films. • Conductive nanosilver films form on top of or within the polymer depending on MW. - Abstract: Flexible and electrically conductive nanocomposite films are essential for small, portable and even implantable electronic devices. Typically, such film synthesis and conductivity measurement are carried out sequentially. As a result, optimization of filler loading and size/morphology characteristics with respect to film conductivity is rather tedious and costly. Here, freshly-made Ag nanoparticles (nanosilver) are made by scalable flame aerosol technology and directly deposited onto polymeric (polystyrene and poly(methyl methacrylate)) films during which the resistance of the resulting nanocomposite is measured in situ. The formation and gas-phase growth of such flame-made nanosilver, just before incorporation onto the polymer film, is measured by thermophoretic sampling and microscopy. Monitoring the nanocomposite resistance in situ reveals the onset of conductive network formation by the deposited nanosilver growth and sinternecking. The in situ measurement is much faster and more accurate than conventional ex situ four-point resistance measurements since an electrically percolating network is detected upon its formation by the in situ technique. Nevertheless, general resistance trends with respect to filler loading and host polymer composition are consistent for both in situ and ex situ measurements. The time lag for the onset of a conductive network (i.e., percolation) depends linearly on the glass transition temperature (T g ) of the host polymer. This is attributed to the increased nanoparticle-polymer interaction with decreasing T g . Proper selection of the host polymer in combination with in situ resistance monitoring

  2. In situ measurement of conductivity during nanocomposite film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Blattmann, Christoph O.; Pratsinis, Sotiris E., E-mail: sotiris.pratsinis@ptl.mavt.ethz.ch

    2016-05-15

    Highlights: • Flame-made nanosilver dynamics are elucidated in the gas-phase & on substrates. • The resistance of freshly depositing nanosilver layers is monitored. • Low T{sub g} polymers facilitate rapid synthesis of conductive films. • Conductive nanosilver films form on top of or within the polymer depending on MW. - Abstract: Flexible and electrically conductive nanocomposite films are essential for small, portable and even implantable electronic devices. Typically, such film synthesis and conductivity measurement are carried out sequentially. As a result, optimization of filler loading and size/morphology characteristics with respect to film conductivity is rather tedious and costly. Here, freshly-made Ag nanoparticles (nanosilver) are made by scalable flame aerosol technology and directly deposited onto polymeric (polystyrene and poly(methyl methacrylate)) films during which the resistance of the resulting nanocomposite is measured in situ. The formation and gas-phase growth of such flame-made nanosilver, just before incorporation onto the polymer film, is measured by thermophoretic sampling and microscopy. Monitoring the nanocomposite resistance in situ reveals the onset of conductive network formation by the deposited nanosilver growth and sinternecking. The in situ measurement is much faster and more accurate than conventional ex situ four-point resistance measurements since an electrically percolating network is detected upon its formation by the in situ technique. Nevertheless, general resistance trends with respect to filler loading and host polymer composition are consistent for both in situ and ex situ measurements. The time lag for the onset of a conductive network (i.e., percolation) depends linearly on the glass transition temperature (T{sub g}) of the host polymer. This is attributed to the increased nanoparticle-polymer interaction with decreasing T{sub g}. Proper selection of the host polymer in combination with in situ resistance

  3. Extraction and Separation of Tin from Tin-Bearing Secondary Resources: A Review

    Science.gov (United States)

    Su, Zijian; Zhang, Yuanbo; Liu, Bingbing; Lu, Manman; Li, Guanghui; Jiang, Tao

    2017-11-01

    The proven global tin reserves were reported to be approximately 4.7 million tons (Mts) in 2016, and among these resources, only approximately 2.2 Mts can be recovered economically. The original tin deposits will be exhausted in several years, therefore, tin-bearing secondary resources, such as tin alloy, tin anode slime, e-wastes, tin slag and tin-bearing tailings, will become the primary source from which tin can be extracted. Many investigations have been conducted on the recovery of tin from these tin-bearing materials. However, the separation and recovery approaches of tin vary significantly, since the content and phase compositions of tin are totally different in these secondary resources. This paper reviews these methods of extracting and separating tin from different kinds of tin-bearing secondary resources.

  4. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Headrick, Randall [Univ. of Vermont, Burlington, VT (United States)

    2016-03-18

    In this research program, we have explored the fundamental limits for thin film deposition in both crystalline and amorphous (i.e. non-crystalline) materials systems. For vacuum-based physical deposition processes such as sputter deposition, the background gas pressure of the inert gas (usually argon) used as the process gas has been found to be a key variable. Both a roughness transition and stress transition as a function of pressure have been linked to a common mechanism involving collisions of energetic particles from the deposition source with the process inert gas. As energetic particles collide with gas molecules in the deposition process they lose their energy rapidly if the pressure (and background gas density) is above a critical value. Both roughness and stress limit important properties of thin films for applications. In the area of epitaxial growth we have also discovered a related effect; there is a critical pressure below which highly crystalline layers grow in a layer-by-layer mode. This effect is also though to be due to energetic particle thermalization and scattering. Several other important effects such as the observation of coalescence dominated growth has been observed. This mode can be likened to the behavior of two-dimensional water droplets on the hood of a car during a rain storm; as the droplets grow and touch each other they tend to coalesce rapidly into new larger circular puddles, and this process proceeds exponentially as larger puddles overtake smaller ones and also merge with other large puddles. This discovery will enable more accurate simulations and modeling of epitaxial growth processes. We have also observed that epitaxial films undergo a roughening transition as a function of thickness, which is attributed to strain induced by the crystalline lattice mismatch with the substrate crystal. In addition, we have studied another physical deposition process called pulsed laser deposition. It differs from sputter deposition due to the

  5. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    acer

    ABSTRACT: Thin films of CuxS have successfully been deposited on glass substrates using the ... different crustal structures depending on the value of X such as hexagonal, orthorhombic pseudo-cubic and tetragonal (pathan and. Lokhande, 2004). For example, CuxS has hexagonal structure and Cu2S may be present in.

  6. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  7. Polymer assisted deposition of electrochromic tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kalagi, S.S. [Govindram Seksaria Science College, Belgaum 590006, Karnataka (India); Dalavi, D.S.; Pawar, R.C.; Tarwal, N.L.; Mali, S.S. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.i [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2010-03-18

    We report the synthesis of structurally and uniformly deposited porous tungsten oxide (WO{sub 3}) thin films for the first time by the novel route of polymer assisted deposition (PAD) using ammonium tungstate as a precursor with polyvinyl alcohol (PVA) as an additive. The effect of deposition parameters on the morphological, optical and electrochemical performance of the thin films is investigated. WO{sub 3} thin films were characterized for their structural, morphological, optical and electrochromic properties. XRD result indicates monoclinic phase of WO{sub 2.92}. FT-Raman studies show high intensity peaks centered at 997 cm{sup -1}and 798 cm{sup -1}. SEM results indicate that there is uniform deposition of porous WO{sub 3}-PVA agglomerates on the transparent substrates. SEM data show low dense structure of an average grain size of about 1 {mu}m. Electrochromic studies reveal highly reversible and the stable nature of the thin films. Transmission data show an optical modulation density of 46.57% at 630 nm with an excellent reversibility of 89% and an electrochromic coloration efficiency of 36 cm{sup 2}/C.

  8. Deposition of silicon films in presence of nitrogen plasma— A ...

    Indian Academy of Sciences (India)

    Unknown

    physical and process related parameters are changed. The grown films are characterized using X-ray ... Silicon nitride is one of the promising materials for numerous applications in the semiconductor industry ... Compared to reactive sputtering, this method offers advantages of low power levels, higher deposition rates and ...

  9. Protection of elastomers with DLC film : deposition, characterization and performance

    NARCIS (Netherlands)

    Martinez Martinez, Diego

    2017-01-01

    Elastomers are materials which suffer from strong wear and cause high friction losses when subjected to dynamic contact, leading quite often to failure of the components in devices. In this Thesis, the protection of elastomers by the deposition of carbon-based films (DLC) is studied. To accomplish

  10. AlN film deposition as a semiconductor device

    Directory of Open Access Journals (Sweden)

    Julio Cesar Caicedo

    2013-05-01

    Full Text Available AlN films were deposited by pulsed laser deposition (PLD using an Nd: YAG laser (λ = 1064 nm. The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99% target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100 substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200°C to 630°C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW devices with a Mo/AlN/Si configuration have been fabricated using AlN-buffer and Mo Channel. The films’ morphology and composition were studied using scanning electron microscopy (SEM and energy dispersive X-ray analysis (EDX, respectively. The films’ optical reflectance spectra and colour coordinates were obtained by optical spectral reflectometry in the 400-900 cm-1 range using an Ocean Optics 2000 spectrophotometer. The present work found clear dependence on morphological properties, reflectance, dominant wavelength colour purity, frequency response and acoustic wave speed in terms of the temperature applied to the substrate. About 30% reduction in reflectance was observed and increased acoustic wave speed of about 1.3 % when the temperature was increased from 200°C to 630°C.

  11. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the ...

  12. Laser deposition and analysis of biocompatible ceramic films - experiences andoverview

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Dostálová, T.; Fotakis, C.; Studnička, Václav; Jastrabík, Lubomír; Havránek, V.; Grivas, C.; Pospíchal, M.; Kadlec, J.; Peřina, Vratislav

    1996-01-01

    Roč. 6, č. 1 (1996), s. 144-149 ISSN 1054-660X Institutional research plan: CEZ:A02/98:Z1-010-914 Keywords : laser deposition * hydroxyapatite * ceramic films Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Effect of thermal treatment on solid–solid interface of hematite thin film synthesized by spin-coating deposition solution

    International Nuclear Information System (INIS)

    Bellido-Aguilar, Daniel Angel; Tofanello, Aryane; Souza, Flavio L.; Furini, Leonardo Negri; Constantino, Carlos José Leopoldo

    2016-01-01

    This work describes hematite films prepared by a spin-coating deposition solution (SCDS) method that is a sol–gel method derived technique. Hematite films were prepared at two heat treatment temperatures (500 °C and 800 °C) and the influence of thermal treatment on the photoelectrochemical performance was studied. In addition, since the SCDS method allows an optimal control of stoichiometry and impurity incorporation, hematite films modified with Zn 2+ and Sn 4+ were also prepared. The 800 °C-treated hematite films had a higher wettability and roughness that enabled them to have a better photocatalytic response in comparison with that of 500 °C-treated hematite films. Moreover, modified hematite films demonstrated to have a performance slightly better than that of undoped hematite film as shown in linear sweep voltammetry and chronoamperometry results. Although an improvement in the performance of hematite films was achieved by annealing at higher temperatures and incorporating Zn 2+ or Sn 4+ , the general photocatalytic response of the films was poor. Two plausible hypotheses were discussed related to the (i) dopant segregation at grain boundary, and (ii) poor contact between the hematite and fluorine doped tin oxide layer (from the glass substrate), which was experimentally confirmed by a cross-sectional analysis conducted using scanning electron microscopy (SEM). In fact, additional experiments need to be done in order to improve the hematite deposition and make the SCDS a promise method for industrial application. - Highlights: • High temperature of annealing decreases the hematite adherence and performance. • Zn 2+ and Sn 4+ dopants affected differently the photocurrent onset potentials. • Dopants affected the grain size due to their segregation at grain boundaries.

  14. Analysis of Indium Tin Oxide Film Using Argon Fluroide (ArF) Laser-Excited Atomic Fluorescence of Ablated Plumes.

    Science.gov (United States)

    Ho, Sut Kam; Garcia, Dario Machado

    2017-04-01

    A two-pulse laser-excited atomic fluorescence (LEAF) technique at 193 nm wavelength was applied to the analysis of indium tin oxide (ITO) layer on polyethylene terephthalate (PET) film. Fluorescence emissions from analytes were induced from plumes generated by first laser pulse. Using this approach, non-selective LEAF can be accomplished for simultaneous multi-element analysis and it overcomes the handicap of strict requirement for laser excitation wavelength. In this study, experimental conditions including laser fluences, times for gating and time delay between pulses were optimized to reveal high sensitivity with minimal sample destruction and penetration. With weak laser fluences of 100 and 125 mJ/cm 2 for 355 and 193 nm pulses, detection limits were estimated to be 0.10% and 0.43% for Sn and In, respectively. In addition, the relation between fluorescence emissions and number of laser shots was investigated; reproducible results were obtained for Sn and In. It shows the feasibility of depth profiling by this technique. Morphologies of samples were characterized at various laser fluences and number of shots to examine the accurate penetration. Images of craters were also investigated using scanning electron microscopy (SEM). The results demonstrate the imperceptible destructiveness of film after laser shot. With such weak laser fluences and minimal destructiveness, this LEAF technique is suitable for thin-film analysis.

  15. Wafer-level hermetic vacuum packaging by bonding with a copper-tin thin film sealing ring

    Science.gov (United States)

    Akashi, Teruhisa; Funabashi, Hirofumi; Takagi, Hideki; Omura, Yoshiteru; Hata, Yoshiyuki

    2018-04-01

    A wafer-level hermetic vacuum packaging technology intended for use with MEMS devices was developed based on a copper-tin (CuSn) thin film sealing ring. To allow hermetic packaging, the shear strength of the CuSn thin film bond was improved by optimizing the pretreatment conditions. As a result, an average shear strength of 72.3 MPa was obtained and a cavity that had been hermetically sealed using wafer-level packaging (WLP) maintained its vacuum for 1.84 years. The total pressures in the cavities and the partial pressures of residual gases were directly determined with an ultra-low outgassing residual gas analyzer (RGA) system. Hermeticity was evaluated based on helium leak rates, which were calculated from helium pressures determined with the RGA system. The resulting data showed that a vacuum cavity following 1.84 years storage had a total pressure of 83.1 Pa, contained argon as the main residual gas and exhibited a helium leak rate as low as 1.67  ×  10-17 Pa · m3 s-1, corresponding to an air leak rate of 6.19  ×  10-18 Pa · m3 s-1. The RGA data demonstrate that WLP using a CuSn thin film sealing ring permits ultra-high hermeticity in conjunction with long-term vacuum packaging that is applicable to MEMS devices.

  16. Room-temperature processed tin oxide thin film as effective hole blocking layer for planar perovskite solar cells

    Science.gov (United States)

    Tao, Hong; Ma, Zhibin; Yang, Guang; Wang, Haoning; Long, Hao; Zhao, Hongyang; Qin, Pingli; Fang, Guojia

    2018-03-01

    Tin oxide (SnO2) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO2 film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO2 film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO2 (FTO) substrate and perovskite (CH3NH3PbI3) layer. Thus, this SnO2 hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO2 hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates.

  17. Deposition of SiC thin films by PECVD

    CERN Document Server

    Cho, N I; Kim, C K

    1999-01-01

    The SiC films were deposited on Si substrate by the decomposition of CH sub 3 SiCl sub 3 (methylthrichlorosilane) molecules in a high frequency discharge field. From the Raman spectra, it is conjectured that the deposited film are formed into the polycrystalline structure. The photon absorption measurement reveal that the band gap of the electron energy state are to be 2.4 eV for SiC, and 2.6 eV for Si sub 0 sub . sub 4 C sub 0 sub . sub 6 , respectively. In the high power density regime, methyl-radicals decompose easily and increases the carbon concentration in plasma and result in the growing films.

  18. Pulsed laser deposition of high Tc superconducting thin films

    International Nuclear Information System (INIS)

    Singh, R.K.; Narayan, J.

    1990-01-01

    This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

  19. Electrical mechanism analysis of Al{sub 2}O{sub 3} doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hyeongsik; Jang, Kyungsoo; Kumar, Krishna; Ahn, Shihyun; Cho, Jaehyun; Jang, Juyeon [School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of); Ahn, Kyungjun; Yeom, Jeonghoon; Kim, Dongseok [SNTEK, 906 Hakun-li, Yangchon-myeon, Kimpo-si, Gyeonggi-do 415-843 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of)

    2011-08-01

    Cost efficient and large area deposition of superior quality Al{sub 2}O{sub 3} doped zinc oxide (AZO) films is instrumental in many of its applications, including solar cell fabrication due to its numerous advantages over indium tin oxide (ITO) films. In this study, AZO films were prepared by a highly efficient rotating cylindrical direct current (DC) magnetron sputtering system using an AZO target, which has a target material utilization above 80%, on glass substrates in argon (Ar) ambient. A detailed analysis on the electrical, optical, and structural characteristics of AZO thin films was performed for the solar cell, as well as display applications. The properties of films were found to critically depend on deposition parameters, such as sputtering power, substrate temperature, working pressure, and film thickness. A low resistivity of {approx} 5.5 x 10{sup -4} {Omega} cm was obtained for films deposited at 2 kW, keeping the pressure, substrate temperature and thickness constant at 3 mTorr, 230 deg. C and {approx} 1000 nm respectively. This was due to an increase in carrier mobility and large grain size. Mobility is found to be controlled by ionized impurity scattering within the grains, since the mean free path of carriers is much smaller than the grain size of the films. The AZO films showed a high transparency of {approx} 90% in the long wavelength region. Our results offer a cost-efficient AZO film deposition method that can fabricate films with significant low resistivity and high transmittance that can be applied in thin-film solar cells, as well as thin film transistor (TFT) and non-volatile memory (NVM).

  20. Pulsed laser deposition of anatase thin films on textile substrates

    Energy Technology Data Exchange (ETDEWEB)

    Krämer, André; Kunz, Clemens; Gräf, Stephan; Müller, Frank A.

    2015-10-30

    Highlights: • Anatase thin films were grown on carbon fibre fabrics by pulsed laser deposition. • A novel Q-switched CO{sub 2} laser was utilised as radiation source. • Coated fibres exhibit photocatalytic activity and are resistant against bending. - Abstract: Pulsed laser deposition (PLD) is a highly versatile tool to prepare functional thin film coatings. In our study we utilised a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a laser wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW to deposit crystalline anatase thin films on carbon fibre fabrics. For this purpose, preparatory experiments were performed on silicon substrates to optimise the anatase deposition conditions including the influence of different substrate temperatures and oxygen partial pressures. Processing parameters were then transferred to deposit anatase on carbon fibres. Scanning electron microscopy, X-ray diffraction analyses, Raman spectroscopy and tactile profilometry were used to characterise the samples and to reveal the formation of phase pure anatase without the occurrence of a secondary rutile phase. Methanol conversion test were used to prove the photocatalytic activity of the coated carbon fibres.

  1. Atmospheric pressure chemical vapour deposition of vanadium diselenide thin films

    Science.gov (United States)

    Boscher, Nicolas D.; Blackman, Christopher S.; Carmalt, Claire J.; Parkin, Ivan P.; Prieto, A. Garcia

    2007-05-01

    Atmospheric pressure chemical vapour deposition (APCVD) of vanadium diselenide thin films on glass substrates was achieved by reaction of [V(NMe 2) 4] and tBu 2Se. X-ray diffraction showed that the VSe 2 films were crystalline with preferential growth either along the (1 0 1) or the (1 1 0) direction. Energy-dispersive analysis by X-rays (EDAX) gave a V:Se ratio close to 1:2 for all films. The films were matt black in appearance, were adhesive, passed the Scotch tape test but could be scratched with a steel scalpel. SEM showed that the films were composed of plate-like crystallites orientated parallel to the substrate which become longer and thicker with increasing deposition temperature. Attempts to produce vanadium selenide films were also performed using tBu 2Se and two different vanadium precursors: VCl 4 and VOCl 3. Both were found to be unsuitable for producing VSe 2 from the APCVD reaction with tBu 2Se. The VSe 2 showed charge density wave transition at 110-115 K.

  2. Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Besland, M.P. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France)]. E-mail: Marie-Paule.Besland@cnrs-imn.fr; Djani-ait Aissa, H. [Division milieux Ionises et lasers, Centre de Developpement des Technologies Avancees CDTA, Baba Hassen Alger, Algerie (Algeria); Barroy, P.R.J. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Lafane, S. [Division milieux Ionises et lasers, Centre de Developpement des Technologies Avancees CDTA, Baba Hassen Alger, Algerie (Algeria); Tessier, P.Y. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Angleraud, B. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Richard-Plouet, M. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Brohan, L. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France); Djouadi, M.A. [Institut des Materiaux Jean Rouxel, Universite de Nantes, UMR CNRS 6502, 2 rue de la Houssiniere, B.P. 32229, 44322, Nantes cedex 3 (France)

    2006-01-20

    Bi{sub 4-x}La {sub x}Ti{sub 3}O{sub 12} (BLT {sub x}) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO{sub 2}/SiO{sub 2}/Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La){sub 2} Ti{sub 3} O{sub 12} to (Bi,La){sub 4.5}Ti{sub 3}O{sub 12}, depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La){sub 4}Ti{sub 3}O{sub 12} chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones.

  3. Modeling of flame assisted chemical vapor deposition of silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Masi, M.; Cavallotti, C.; Raffa, E. [Dipartimento di Chimica, Materiali e Ingegneria Chimica, Politecnico di Milano, via Mancinelli 7, 20131 Milano (Italy)

    2011-08-15

    The simulation of a flame assisted chemical vapor deposition (FACVD) process is here proposed with reference to the growth of silicon thin films through the silane/chlorosilanes/hydrogen/chlorine route. The goal is to design a reactor able to deposit micromorphous or multicrystalline films at the high growth rates necessary for photovoltaic applications. In fact, since FACVD processes can operate in atmospheric conditions and in auto-thermal mode, they present significant energetic advantages with respect to the plasma assisted technology used today. This work is in particular devoted to illustrate the multi-hierarchical modeling procedure adopted to determine the process optimal operating conditions and to design the deposition chamber. Different burner geometries (single, porous or multiple nozzles burner) were investigated in order to exploit the advantages of the two classical stagnation flow and Bunsen stretched flames. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. UV pulsed laser deposition of magnetite thin films

    International Nuclear Information System (INIS)

    Parames, M.L.; Mariano, J.; Rogalski, M.S.; Popovici, N.; Conde, O.

    2005-01-01

    Magnetite thin films were grown by pulsed laser deposition in O 2 reactive atmosphere from Fe 3 O 4 targets. The ablated material was deposited onto Si(1 0 0) substrates at various temperatures up to 623 K. The temperature dependence of structure and stoichiometry was investigated by X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). The XRD results show that films grown between 483 and 623 K are obtained as pure phase magnetite with an estimated average crystallite size increasing from 14 to 35 nm, respectively. This is in agreement with the CEMS spectra analysis, indicating isomer shift and internal field values for both the T d and O h sites close to those reported for the bulk material and a random orientation of the magnetic moments. The influence of the deposition temperature on the estimated Fe (9-x)/3 O 4 stoichiometry is related to an increase in the vacancy concentration from 483 to 623 K

  5. Flame spray pyrolysis synthesis and aerosol deposition of nanoparticle films

    DEFF Research Database (Denmark)

    Tricoli, Antonio; Elmøe, Tobias Dokkedal

    2012-01-01

    The assembly of nanoparticle films by flame spray pyrolysis (FSP) synthesis and deposition on temperature‐controlled substrates (323–723 K) was investigated for several application‐relevant conditions. An exemplary SnO2 nanoparticle aerosol was generated by FSP and its properties (e.g., particle...... size distribution), and deposition dynamics were studied in details aiming to a simple correlation between process settings and film growth rate. At high precursor concentrations (0.05–0.5·mol/L), typically used for FSP synthesis, the nanoparticles agglomerated rapidly in the aerosol leading to large...... (>100 nm) fractal‐like structures with low diffusivity. As a result, thermophoresis was confirmed as the dominant nanoparticle deposition mechanism down to small (≈40 K) temperature differences (ΔT) between the aerosol and the substrate surface. For moderate‐high ΔT (>120 K), thermal equilibrium...

  6. Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates

    International Nuclear Information System (INIS)

    Guillén, C; Herrero, J

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) films with thickness between 0.2 and 0.7 µm were deposited by sputtering at room temperature on glass and polyethylene terephthalate (PET) substrates. All films were polycrystalline, with crystallite size increasing and lattice distortion decreasing when the film thickness was increased. Besides, transmission in the near-infrared region is found to be decreasing and carrier concentration increasing when the film thickness was increased. For the same thickness, the lattice distortion is slightly lower and the carrier concentration higher for the layers grown on PET substrates. A direct relationship between the lattice distortion and the free carrier concentration has been established, applying to the films grown on glass and plastic substrates. By adjusting ITO coating thickness, sheet resistance below 15 Ω sq −1 and average visible transmittance about 90% have been achieved by sputtering at room temperature

  7. Ti-O/TiN films synthesized by plasma immersion ion implantation and deposition on 316L: Study of deformation behavior and mechanical properties

    International Nuclear Information System (INIS)

    Wan, G.J.; Huang, N.; Yang, P.; Leng, Y.X.; Sun, H.; Chen, J.Y.; Wang, J.

    2005-01-01

    Ti-O/TiN gradient films have been synthesized on 316L stainless steel using plasma immersion ion implantation and deposition (PIII and D). The coated samples were subjected to tensile testing and observed in situ by scanning electron microscopy. No delamination, peeling or cracking was found on the film after plastic deformation of 0.16 mm residual displacement. Nanoindentation and nanoscratch tests revealed that the prepared films possess high nanohardness and good adhesion strength to the metal substrate. The mechanical properties of the synthesized Ti-O/TiN films are thought to be attributed to the good nanostructure, high density, smooth surface, slow transition from Ti-O to TiN and broad film/matrix interface achieved by the PIII-D process

  8. Indium-tin-oxide thin film transistor biosensors for label-free detection of avian influenza virus H5N1

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Di; Zhuo, Ming [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Zhang, Xiaoai [State Key Laboratory of Pathogen and Biosecurity, Beijing Institute of Microbiology and Epidemiology, Beijing (China); Xu, Cheng; Jiang, Jie [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Gao, Fu [State Key Laboratory of Pathogen and Biosecurity, Beijing Institute of Microbiology and Epidemiology, Beijing (China); Wan, Qing, E-mail: wanqing7686@hotmail.com [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Li, Qiuhong, E-mail: liqiuhong2004@hotmail.com [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Wang, Taihong, E-mail: thwang@hnu.cn [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China)

    2013-04-22

    Highlights: ► A highly selective label-free biosensor is established based on indium-tin-oxide thin-film transistors (ITO TFTs). ► AI H5N1 virus was successfully detected through shift in threshold voltage and field-effect mobility of ITO TFT. ► The ITO TFT is applied in biosensor for the first time and shows good reusability and stability. ► Fabrication of the platform is simple with low cost, which is suitable for mass commercial production. -- Abstract: As continuous outbreak of avian influenza (AI) has become a threat to human health, economic development and social stability, it is urgently necessary to detect the highly pathogenic avian influenza H5N1 virus quickly. In this study, we fabricated indium-tin-oxide thin-film transistors (ITO TFTs) on a glass substrate for the detecting of AI H5N1. The ITO TFT is fabricated by a one-shadow-mask process in which a channel layer can be simultaneously self-assembled between ITO source/drain electrodes during magnetron sputtering deposition. Monoclonal anti-H5N1 antibodies specific for AI H5N1 virus were covalently immobilized on the ITO channel by (3-glycidoxypropyl)trimethoxysilane. The introduction of target AI H5N1 virus affected the electronic properties of the ITO TFT, which caused a change in the resultant threshold voltage (V{sub T}) and field-effect mobility. The changes of I{sub D}–V{sub G} curves were consistent with an n-type field effect transistor behavior affected by nearby negatively charged AI H5N1 viruses. The transistor based sensor demonstrated high selectivity and stability for AI H5N1 virus sensing. The sensor showed linear response to AI H5N1 in the concentrations range from 5 × 10{sup −9} g mL{sup −1} to 5 × 10{sup −6} g mL{sup −1} with a detection limit of 0.8 × 10{sup −10} g mL{sup −1}. Moreover, the ITO TFT biosensors can be repeatedly used through the washing processes. With its excellent electric properties and the potential for mass commercial production, ITO TFTs

  9. Vacuum deposition onto webs, films and foils

    CERN Document Server

    Bishop, Charles A

    2011-01-01

    Roll-to-roll vacuum deposition is the technology that applies an even coating to a flexible material that can be held on a roll and provides a much faster and cheaper method of bulk coating than deposition onto single pieces or non-flexible surfaces, such as glass. This technology has been used in industrial-scale applications for some time, including a wide range of metalized packaging (e.g. snack packets). Its potential as a high-speed, scalable process has seen an increasing range of new products emerging that employ this cost-effective technology: solar energy products are moving from rigid panels onto flexible substrates, which are cheaper and more versatile; in a similar way, electronic circuit 'boards' can be produced on a flexible polymer, creating a new range of 'flexible electronics' products; and, flexible displays are another area of new technology in vacuum coating, with flexible display panels and light sources emerging. Charles Bishop has written this book to meet the need he identified, as a t...

  10. Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition

    Science.gov (United States)

    Yu, Zhinong; Leng, Jian; Xue, Wei; Zhang, Ting; Jiang, Yurong; Zhang, Jie; Zhang, Dongpu

    2012-01-01

    ZnS/Ag/ZnS (ZAZ) multilayer films were prepared on polyethene terephthalate (PET) by ion beam assisted deposition at room temperature. The structural, optical and electrical characteristics of ZAZ multilayers dependent on the thickness of silver layer were investigated. The ZAZ multilayers exhibit a low sheet resistance of about 10 Ω/sq., a high transmittance of 92.1%, and the improved resistance stabilities when subjected to bending. When the inserted Ag thickness is over 12 nm, the ZAZ multilayers show good resistance stabilities due to the existence of a ductile Ag metal layer. The results suggest that ZAZ film has better optoelectrical and anti-deflection characteristics than conventional indium tin oxide (ITO) single layer.

  11. Polarized Raman spectroscopy of chemically vapour deposited diamond films

    International Nuclear Information System (INIS)

    Prawer, S.; Nugent, K.W.; Weiser, P.S.

    1994-01-01

    Polarized micro-Raman spectra of chemically vapour deposited diamond films are presented. It is shown that important parameters often extracted from the Raman spectra such as the ratio of the diamond to non-diamond component of the films and the estimation of the level of residual stress depend on the orientation of the diamond crystallites with respect to the polarization of the incident laser beam. The dependence originates from the fact that the Raman scattering from the non-diamond components in the films is almost completely depolarized whilst the scattering from the diamond components is strongly polarized. The results demonstrate the importance of taking polarization into account when attempting to use Raman spectroscopy in even a semi-quantitative fashion for the assessment of the purity, perfection and stress in CVD diamond films. 8 refs., 1 tab. 2 figs

  12. Multi-phase structures of boron-doped copper tin sulfide nanoparticles synthesized by chemical bath deposition for optoelectronic devices

    Science.gov (United States)

    Rakspun, Jariya; Kantip, Nathakan; Vailikhit, Veeramol; Choopun, Supab; Tubtimtae, Auttasit

    2018-04-01

    We investigated the influence of boron doping on the structural, optical, and electrical properties of copper tin sulfide (CTS) nanoparticles coated on a WO3 surface and synthesized using chemical bath deposition. Boron doping at concentrations of 0.5, 1.0, 1.5, and 2.0 wt% was investigated. The X-ray diffraction pattern of CTS showed the presence of monoclinic Cu2Sn3S7, cubic Cu2SnS3, and orthorhombic Cu4SnS4. Boron doping influenced the preferred orientation of the nanoparticles for all phase structures and produced a lattice strain effect and changes in the dislocation density. Increasing the concentration of boron in CTS from 0.5 wt% to 2.0 wt% reduced the band gap for all phases of CTS from 1.46 to 1.29 eV and reduced the optical transmittance. Optical constants, such as the refractive index, extinction coefficient, and dissipation factor, were also obtained for B-doped CTS. The dispersion behavior of the refractive index was investigated in terms of a single oscillator model and the physical parameters were determined. Fourier transform infrared spectroscopy confirmed the successful synthesis of CTS nanoparticles. Cyclic voltammetry indicated that optimum boron doping (<1.5 wt% for all phases) resulted in desirable p-n junction behavior for optoelectronic applications.

  13. Study of hard diamond-like carbon films deposited in an inductively coupled plasma source

    International Nuclear Information System (INIS)

    Yu Shiji; Ma Tengcai

    2003-01-01

    Chemical vapor deposition of the hard diamond-like carbon (DLC) films was achieved using an inductively coupled plasma source (ICPS). The microscopy, microhardness, deposition rate and structure characteristic of the DLC films were analyzed. It is shown that the ICPS is suitable for the hard DLC film deposition at relatively low substrate negative bias voltage, and the substrate negative bias voltage greatly affects chemical vapor deposition of the DLC film and its quality

  14. Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

    KAUST Repository

    Yang, Yang

    2014-11-01

    Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences. The symmetries of the fundamental Raman modes in 50-700 cm-1 were identified based on group theory. The symmetries of the high order Raman modes in 900-1500 cm-1 of BiFeO3 are determined for the first time, which can provide strong clarifications to the symmetry of the fundamental peaks in 400-700 cm-1 in return. Moreover, the lattice structures of BiFeO3 films are identified consequently on the basis of Raman spectroscopy. BiFeO3 films on SrRuO3 coated SrTiO3 (0 0 1) substrate, CaRuO3 coated SrTiO3 (0 0 1) substrate and tin-doped indium oxide substrate are found to be in the rhombohedral structure, while BiFeO3 film on SrRuO3 coated Nb: SrTiO3 (0 0 1) substrate is in the monoclinic structure. Our results suggest that polarized Raman spectroscopy would be a feasible tool to study the lattice structure of BiFeO3 films.

  15. Mocvd of Tin Oxide for Gas Sensors.

    Science.gov (United States)

    Weglicki, Peter Stanislaw

    1990-01-01

    Available from UMI in association with The British Library. Requires signed TDF. Thin films of a wide variety of materials can be produced using an assortment of physical and chemical techniques. Such techniques are reviewed and compared, with particular reference to the deposition of tin oxide films. In the present study, MOCVD (Metal organic chemical vapour deposition) was used to grow thin films of tin oxide from dibutyltin diacetate precursor on a variety of substrates. A series of reactor prototypes were developed in accordance with specific requirements of reproducibility and process control. The evolution of the designs leading to the final working system is detailed. The theory of MOCVD is given with particular reference to the reactor used in this project. The effects of various deposition parameters on tin oxide film growth rates were investigated, and the results are discussed with reference to the deposition kinetics in the system. Films were characterised by optical interferometry, optical and electron microscopy, X-ray diffraction, Rutherford backscattering and electrical measurements. The films were generally uniform, conducting and polycrystalline, and were comprised of very small grains, resulting in a high density. A specific application of metal oxide materials is in solid state gas sensors, which are available in various forms and operate according to different mechanisms. These are compared and a detailed account is given on the theory of operation of surface conductivity modulated devices. The application of such devices based on tin oxide in thin film form was investigated in the present work. The prepared sensor samples were comprised of very small grains, resulting in a high density. The observation that preferred (310) orientation occured in thicker films, can be attributed to dendritic growth. The sensors generally showed response to numerous reducing gas ambients, although there was evidence of a degree of selectivity against methane

  16. Morphology evolutions and optical properties of Cu 2O films by an electrochemical deposition on flexible substrate

    Science.gov (United States)

    Zhai, Yuchun; Fan, Huiqing; Li, Qiang; Yan, Wei

    2012-01-01

    Micro crystals of cuprous oxide (Cu2O) with different morphologies, evolving from cubes, tetrahedrons, truncated cubes and final to truncated octahedrons, were obtained on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) by simply adjusting the electrochemical deposition time. We elucidated the underlying morphology evolution mechanism using the cyclic voltammogram (CV), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical properties of Cu2O films were characterized by the ultraviolet-visible (UV-vis) spectrum, which demonstrated the band gap changing from 2.21 eV to 2.43 eV with different electrochemical deposition time owing to the quantum confinement effect.

  17. Properties of ZnO thin films deposited by chemical bath deposition and post annealed

    International Nuclear Information System (INIS)

    Ouerfelli, J; Regragui, M; Morsli, M; Djeteli, G; Jondo, K; Amory, C; Tchangbedji, G; Napo, K; Bernede, J C

    2006-01-01

    ZnO thin films deposited by chemical bath deposition (CBD) have been studied using x-ray diffraction, scanning electron microscopy, electron microprobe analysis and electrical measurements. The optimum CBD conditions for achieving structured, but adherent, ZnO films are as follows. Zinc acetate (0.0188 mol l -1 ) and ethylenediamine (0.03 mol l -1 ) are mixed. The pH of the bath is raised by addition of a base (0.5 mol l -1 , NaOH). The solution is maintained at a temperature between 60 deg. C and 65 0 C, while the bath is continuously stirred. We proceeded to anneal in room air for 30 min at 300 deg. C and under vacuum for 2 h at 300 deg. C. All the films obtained are nearly stoichiometric ZnO films crystallized in the usual hexagonal structure. As expected the films are rough and porous. The main difference between the two ZnO film families is their conductivity. The conductivity of the films annealed under vacuum is five orders of magnitude higher than that of those annealed in room air

  18. Fiber-Optic Thermal Sensor for TiN Film Crack Monitoring.

    Science.gov (United States)

    Hsu, Hsiang-Chang; Hsieh, Tso-Sheng; Chen, Yi-Chian; Chen, Hung-En; Tsai, Liren; Chiang, Chia-Chin

    2017-11-11

    The study focuses on the thermal and temperature sensitivity behavior of an optical fiber sensor device. In this article, a titanium nitride (TiN)-coated fiber Bragg grating (FBG) sensor fabricated using an ion beam sputtering system was investigated. The reflection spectra of the FBG sensor were tested using R-soft optical software to simulate the refractive index sensitivity. In these experiments, the temperature sensitivity of the TiN FBG was measured at temperatures ranging from 100 to 500 °C using an optical spectrum analyzer (OSA). The results showed that the temperature sensitivity of the proposed TiN FBG sensor reached 12.8 pm/°C for the temperature range of 100 to 300 °C and 20.8 pm/°C for the temperature range of 300 to 500 °C. Additionally, we found that the produced oxidation at temperatures of 400-500 °C caused a crack, with the crack becoming more and more obvious at higher and higher temperatures.

  19. Fiber-Optic Thermal Sensor for TiN Film Crack Monitoring

    Directory of Open Access Journals (Sweden)

    Hsiang-Chang Hsu

    2017-11-01

    Full Text Available The study focuses on the thermal and temperature sensitivity behavior of an optical fiber sensor device. In this article, a titanium nitride (TiN-coated fiber Bragg grating (FBG sensor fabricated using an ion beam sputtering system was investigated. The reflection spectra of the FBG sensor were tested using R-soft optical software to simulate the refractive index sensitivity. In these experiments, the temperature sensitivity of the TiN FBG was measured at temperatures ranging from 100 to 500 °C using an optical spectrum analyzer (OSA. The results showed that the temperature sensitivity of the proposed TiN FBG sensor reached 12.8 pm/°C for the temperature range of 100 to 300 °C and 20.8 pm/°C for the temperature range of 300 to 500 °C. Additionally, we found that the produced oxidation at temperatures of 400-500 °C caused a crack, with the crack becoming more and more obvious at higher and higher temperatures.

  20. Production of selective membranes using plasma deposited nanochanneled thin films

    Directory of Open Access Journals (Sweden)

    Rodrigo Amorim Motta Carvalho

    2006-12-01

    Full Text Available The hydrolization of thin films obtained by tetraethoxysilane plasma polymerization results in the formation of a nanochanneled silicone like structure that could be useful for the production of selective membranes. Therefore, the aim of this work is to test the permeation properties of hydrolyzed thin films. The films were tested for: 1 permeation of polar organic compounds and/or water in gaseous phase and 2 permeation of salt in liquid phase. The efficiency of permeation was tested using a quartz crystal microbalance (QCM technique in gas phase and conductimetric analysis (CA in liquid phase. The substrates used were: silicon for characterization of the deposited films, piezoelectric quartz crystals for tests of selective membranes and cellophane paper for tests of permeation. QCM analysis showed that the nanochannels allow the adsorption and/or permeation of polar organic compounds, such as acetone and 2-propanol, and water. CA showed that the films allow salt permeation after an inhibition time needed for hydrolysis of the organic radicals within the film. Due to their characteristics, the films can be used for grains protection against microorganism proliferation during storage without preventing germination.

  1. Particulate generation during pulsed laser deposition of superconductor thin films

    International Nuclear Information System (INIS)

    Singh, R.K.

    1993-01-01

    The nature of evaporation/ablation characteristics during pulsed laser deposition strongly controls the quality of laser-deposited films. To understand the origin of particulates in laser deposited films, the authors have simulated the thermal history of YBa 2 Cu 3 O 7 targets under intense nanosecond laser irradiation by numerically solving the heat flow equation with appropriate boundary conditions. During planar surface evaporation of the target material, the sub-surface temperatures were calculated to be higher than the surface temperatures. While the evaporating surface of the target is constantly being cooled due to the latent heat of vaporization, subsurface superheating occurs due to the finite absorption depth of the laser beam. Sub-surface superheating was found to increase with decreasing absorption coefficient and thermal conductivity of the target, and with increasing energy density. The superheating may lead to sub-surface nucleation and growth of the gaseous phase which can expand rapidly leading to microexplosions and ''volume expulsion'' of material from the target. Experiments conducted by the authors and other research groups suggest a strong relation between degree of sub-surface superheating and particle density in laser-deposited films

  2. Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

    Science.gov (United States)

    Anna M. Clausen; Deborah M. Paskiewicz; Alireza Sadeghirad; Joseph Jakes; Donald E. Savage; Donald S. Stone; Feng Liu; Max G. Lagally

    2014-01-01

    Thin-film deposition on ultra-thin substrates poses unique challenges because of the potential for a dynamic response to the film stress during deposition. While theoretical studies have investigated film stress related changes in bulk substrates, little has been done to learn how stress might evolve in a film growing on a compliant substrate. We use silicon...

  3. Laser-assisted deposition of thin C60 films

    DEFF Research Database (Denmark)

    Schou, Jørgen; Canulescu, Stela; Fæster, Søren

    Metal and metal oxide films with controlled thickness from a fraction of a monolayer up more than 1000 nm and known stoichiometry can be produced by pulsed laser deposition (PLD) relatively easily, and (PLD) is now a standard technique in all major research laboratories within materials science...... bound carbon molecule with a well-defined mass (M = 720 amu) and therefore a good, organic test molecule. C60 fullerene thin films of average thickness of more than 100 nm was produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target...

  4. An Investigation of Structural and Electrical Properties of Nano Crystalline SnO2:Cu Thin Films Deposited by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    J. Podder

    2011-11-01

    Full Text Available Pure tin oxide (SnO2 and Cu doped SnO2 thin films have been deposited onto glass substrates by a simple spray pyrolysis technique under atmospheric pressure at temperature 350 °C. The doping concentration of Cu was varied from 1 to 8 wt. % while all other deposition parameters such as spray rate, carrier air gas pressure, deposition time, and distance between spray nozzle to substrate were kept constant. Surface morphology of the as-deposited thin films has been studied by Scanning Electron Microscopy (SEM. The SEM micrograph of the films shows uniform deposition. The structural properties of the as-deposited and annealed thin films have been studied by XRD and the electrical characterization was performed by Van-der Pauw method. The as-deposited films are found polycrystalline in nature with tetragonal crystal structure. Average grain sizes of pure and Cu doped SnO2 thin film have been obtained in the range of 7.2445 Å to 6.0699 Å, which indicates the nanometric size of SnO2 grains developed in the film. The resistivity of SnO2 films was found to decrease initially from 4.5095×10−4 Ωm to 1.1395× 10−4 Ωm for concentration of Cu up to 4 % but it was increased further with increasing of Cu concentrations. The experimental results depict the suitability of this material for using as transparent and conducting window materials in solar cells and gas sensors.

  5. NiCo2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors

    International Nuclear Information System (INIS)

    Wang, Ruiqi; Xia, Chuan; Wei, Nini; Alshareef, Husam N.

    2016-01-01

    Highlights: • NiCo 2 O 4 nanostructures are prepared via a simple hydrothermal method. • Outer shell of TiN is then grown through conformal atomic layer deposition. • Electrodes exhibit significantly enhanced rate capability with TiN coating. • Solid-state polymer electrolyte is employed to improve cycling stability. • Full devices show a stack power density of 58.205 mW cm −3 at 0.061 mWh cm −3 . - Abstract: Ternary transition metal oxides such as NiCo 2 O 4 show great potential as supercapacitor electrode materials. However, the unsatisfactory rate performance of NiCo 2 O 4 may prove to be a major hurdle to its commercial usage. Herein, we report the development of NiCo 2 O 4 @TiN core–shell nanostructures for all-solid-state supercapacitors with significantly enhanced rate capability. We demonstrate that a thin layer of TiN conformally grown by atomic layer deposition (ALD) on NiCo 2 O 4 nanofiber arrays plays a key role in improving their electrical conductivity, mechanical stability, and rate performance. Fabricated using the hybrid NiCo 2 O 4 @TiN electrodes, the symmetric all-solid-state supercapacitor exhibited an impressive stack power density of 58.205 mW cm −3 at a stack energy density of 0.061 mWh cm −3 . To the best of our knowledge, these values are the highest of any NiCo 2 O 4 -based all-solid-state supercapacitor reported. Additionally, the resulting NiCo 2 O 4 @TiN all-solid-state device displayed outstanding cycling stability by retaining 70% of its original capacitance after 20,000 cycles at a high current density of 10 mA cm −2 . These results illustrate the promise of ALD-assisted hybrid NiCo 2 O 4 @TiN electrodes within sustainable and integrated energy storage applications.

  6. Functionalization of indium-tin-oxide electrodes by laser-nanostructured gold thin films for biosensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Grochowska, Katarzyna, E-mail: kgrochowska@imp.gda.pl [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St, 80-231 Gdańsk (Poland); Siuzdak, Katarzyna [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St, 80-231 Gdańsk (Poland); Karczewski, Jakub [Solid State Physics Department, Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, 11/12 Narutowicza St, 80-233, Gdańsk (Poland); Śliwiński, Gerard [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St, 80-231 Gdańsk (Poland)

    2015-12-01

    Graphical abstract: - Highlights: • ITO electrodes modified by NP arrays prepared by laser dewetting of thin Au films. • Enhanced activity, linear response and high sensitivity towards glucose. • Promising biosensor material AuNP-modified ITO of improved performance. - Abstract: The production and properties of the indium-tin-oxide (ITO) electrodes functionalized by Au nanoparticle (NP) arrays of a relatively large area formed by pulsed laser nanostructuring of thin gold films are reported and discussed. The SEM inspection of modified electrodes reveals the presence of the nearly spherical and disc-shaped particles of dimensions in the range of 40–120 nm. The NP-array geometry can be controlled by selection of the laser processing conditions. It is shown that particle size and packing density of the array are important factors which determine the electrode performance. In the case of NP-modified electrodes the peak current corresponding to the glucose direct oxidation process shows rise with increasing glucose concentration markedly higher comparing to the reference Au disc electrode. The detection limit reaches 12 μM and linear response of the sensor is observed from 0.1 to 47 mM that covers the normal physiological range of the blood sugar detection.

  7. Development and characterization of fluorine tin oxide electrodes modified with high area porous thin films containing gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Quintana, Carmen, E-mail: carmen.quintana@uam.e [Dpto. Quimica Analitica y Analisis Instrumental. Facultad de Ciencias. Universidad Autonoma de Madrid. Cantoblanco. 28049-Madrid (Spain); Atienzar, Pedro; Budroni, Gerolamo [Instituto de Tecnologia Quimica de Valencia, UPV-CSIC, Universidad Politecnica de Valencia, Av. de los Naranjos s/n, 46022-Valencia (Spain); Mora, Laura; Hernandez, Lucas [Dpto. Quimica Analitica y Analisis Instrumental. Facultad de Ciencias. Universidad Autonoma de Madrid. Cantoblanco. 28049-Madrid (Spain); Garcia, Hermenegildo; Corma, Avelino [Instituto de Tecnologia Quimica de Valencia, UPV-CSIC, Universidad Politecnica de Valencia, Av. de los Naranjos s/n, 46022-Valencia (Spain)

    2010-10-29

    Different electrode materials are prepared using fluoride doped tin oxide (FTO) electrodes modified with high area porous thin films of metal oxides containing gold nanoparticles. Three different metal oxides (TiO{sub 2}, MgO and SnO{sub 2}) have been assayed to this end. The effect of the metal oxide nature and gold loading on the structure and performance of the modified electrodes was examined by Scanning Electron Microscopy, Transmission Electron Microscopy, X-Ray Diffraction (XRD), Diffuse Reflectance Spectroscopy and electrochemical techniques. XRD measurements reveal that MgO electrodes present the smallest gold nanoparticles after the sintering step however, the electrochemical response of these electrodes shows important problems of mass transport derived from the high porosity of these materials (Brunauer Emmett Teller area of 125 m{sup 2}/g). The excellent sintering properties of titania nanoparticles result in robust films attached to the FTO electrodes which allow more reliable and reproducible results from an electroanalytical point of view.

  8. Defect studies of thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

    2014-01-01

    Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

  9. A new thin film deposition process by cathodic plasma electrolysis

    International Nuclear Information System (INIS)

    Paulmier, T.; Kiriakos, E.; Bell, J.; Fredericks, P.

    2004-01-01

    Full text: A new technique, called atmospheric pressure plasma deposition (APPD), has been developed since a few years for the deposition of carbon and DLC, Titanium or Silicon films on metal and metal alloys substrates. A high voltage (2kV) is applied in a liquid electrolytic solution between an anode and a cathode, both electrodes being cylindrical: a glow discharge is then produced and confined at the vicinity of the cathode. The physic of the plasma in the electrolytic solution near the cathode is very different form the other techniques of plasma deposition since the pressure is here close to the atmospheric pressure. We describe here the different physico-chemical processes occurring during the process. In this cathodic process, the anodic area is significantly larger than the cathode area. In a first step, the electrolytic solution is heated by Joule effect induced by the high voltage between the electrodes. Due to the high current density, the vaporization of the solution occurs near the cathode: a large amount of bubbles are produced which are stabilized at the electrode by hydrodynamic and electromagnetic forces, forming a vapour sheath. The electric field and voltage drop are then concentrated in this gas envelope, inducing the ionization of the gas and the ignition of a glow discharge at the surface of the material. This plasma induces the formation of ionized and reactive species which diffuse and are accelerated toward the cathode. These excited species are the precursors for the formation of the deposition material. At the same time, the glow discharge interacts with the electrolyte solution inducing also ionization, convection and polymerization processes in the liquid: the solution is therefore a second source of the deposition material. A wide range of films have been deposited with a thickness up to 10 micrometers. These films have been analyzed by SEM and Raman spectroscopy. The electrolytic solution has been characterized by GC-MS and the

  10. Deposition of B{sub 4}C/BCN/c-BN multilayered thin films by r.f. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bejarano, G. [Laboratorio de Recubrimientos Duros del CDT-ASTIN SENA, Cali (Colombia); Caicedo, J.M. [Laboratorio de Recubrimientos Duros del CDT-ASTIN SENA, Cali (Colombia); Baca, E. [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia); Prieto, P. [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia)]. E-mail: pprieto@calima.univalle.edu.co; Balogh, A.G. [Institute for Material Science, Darmstadt University of Technology (Germany); Enders, S. [Max Plank Institute, Department of Material Research, Stuttgart (Germany)

    2006-01-03

    Thin films of cubic boron nitride (c-BN) and B{sub 4}C/BCN/c-BN multilayers, were deposited by r.f. (13.56 MHz) multi-target magnetron sputtering from high-purity (99.99%) h-BN and a (99.5%) B{sub 4}C targets, in an Ar (90%)/N{sub 2} (10%) gas mixture. Films were deposited onto silicon substrates with (100) orientations at 300 {sup o}C, with r.f. power density near 7 W/cm{sup 2}. In order to obtain the highest fraction of the c-BN phase, an r.f. substrate bias voltage between - 100 and - 300 V was applied during the initial nucleation process and - 50 to - 100 V during the film growth. Additionally, B{sub 4}C and BCN films were deposited and analyzed individually. For their deposition, we varied the bias voltage of the B{sub 4}C films between - 50 and - 250 V, and for the BCN coatings, the nitrogen gas flow from 3% to 12%. A 300-nm-thick TiN buffer layer was first deposited to improve the adhesion of all samples. X-ray diffraction patterns revealed the presence of c-BN (111) and h-BN phases. FTIR spectroscopy measurements indicate the presence of a peak at 780 cm{sup -} {sup 1} referred to as 'out-of-plane' h-BN vibration mode; another peak at 1100 cm{sup -} {sup 1} corresponds to the c-BN TO mode and the 'in-plane' vibration mode of the h-BN at 1400 cm{sup -} {sup 1}. BN films deposited at 300 deg. C at a pressure of 4.0 Pa and under - 150 V of nucleation r.f. bias, applied for 35 min, presented the highest c-BN fraction, near 85%. By using 32 layers, it was possible to deposit a 4.6-{mu}m-thick c-BN film with adequate mechanical properties and good adhesion to the substrate.

  11. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  12. Deposition and characterization of p-type cadmium telluride films

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.; Firszt, F.; Naseem, H. A.; Stawski, R.

    1985-08-01

    Cadmium telluride is a direct-gap semiconductor with a room-temperature energy gap of 1.5 eV. It is a promising photovoltaic material, and single-crystalline homojunction and heterojunction solar cells have been prepared and characterized. Relatively short minority carrier diffusion length (1-2 microns) can be tolerated due to a short optical absorption length, and, for this reason, CdTe is particularly suited for thin-film devices. The fabrication of thin-film solar cells is based on the use of p-type CdTe films. The present investigation has the objective to prepare CdTe films with controlled properties in a reproducible manner, taking into account a utilization of the reaction of Cd and Te vapor on the surface of heated substrates in a hydrogen (or helium) atmosphere in a gas-flow system. Attention is given to details of film deposition, and CdTe films on graphite, W/graphite, mullite, and glass substrates.

  13. Reactive pulsed laser deposition of gold nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caricato, A.P. [University of Salento, Department of Physics, 73100 Lecce (Italy); Fernandez, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Leggieri, G. [University of Salento, Department of Physics, 73100 Lecce (Italy)]. E-mail: leggieri@le.infn.it; Luches, A. [University of Salento, Department of Physics, 73100 Lecce (Italy); Martino, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Romano, F. [University of Salento, Department of Physics, 73100 Lecce (Italy); Tunno, T. [University of Salento, Department of Physics, 73100 Lecce (Italy); Valerini, D. [University of Salento, Department of Physics, 73100 Lecce (Italy); Verdyan, A. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Soifer, Y.M. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Azoulay, J. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Meda, L. [IGD Polimeri Europa S.p.A, Novara (Italy)

    2007-07-31

    We report on the growth and characterization of gold nitride thin films on Si <1 0 0> substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N{sub 2} or NH{sub 3}). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 deg. C. Film resistivity was measured using a four-point probe and resulted in the (4-20) x 10{sup -8} {omega} m range, depending on the ambient pressure, to be compared with the value 2.6 x 10{sup -8} {omega} m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N{sub 2} phase. All these measurements point to the formation of the gold nitride phase.

  14. Nanoparticle formation and thin film deposition in aniline containing plasmas

    Science.gov (United States)

    Pattyn, Cedric; Dias, Ana; Hussain, Shahzad; Strunskus, Thomas; Stefanovic, Ilija; Boulmer-Leborgne, Chantal; Lecas, Thomas; Kovacevic, Eva; Berndt, Johannes

    2016-09-01

    This contribution deals with plasma based polymerization processes in mixtures of argon and aniline. The investigations are performed in a capacitively coupled RF discharge (in pulsed and continuous mode) and concern both the observed formation of nanoparticles in the plasma volume and the deposition of films. The latter process was used for the deposition of ultra-thin layers on different kind of nanocarbon materials (nanotubes and free standing graphene). The analysis of the plasma and the plasma chemistry (by means of mass spectroscopy and in-situ FTIR spectroscopy) is accompanied by several ex-situ diagnostics of the obtained materials which include NEXAFS and XPS measurements as well as Raman spectroscopy and electron microscopy. The decisive point of the investigations concern the preservation of the original monomer structure during the plasma polymerization processes and the stability of the thin films on the different substrates.

  15. Subzero Temperature Dip-Coating of Sol-Gel Vanadium Pentoxide: Effect of the Deposition Temperature on the Film Structure, Morphology, and Electrochromic Properties

    Directory of Open Access Journals (Sweden)

    Afaf Almoabadi

    2016-01-01

    Full Text Available Vanadium pentoxide sol-gel prepared thin films were deposited on indium-tin-oxide (ITO substrates by dip-coating at a subzero temperature (−10°C. The structure, morphology, and optical and electrochromic properties of dense and porous vanadium oxide films coated at low temperature were determined and compared to those of the corresponding films deposited under room-temperature conditions. The results indicated that, in the films coated at −10°C, a residual compressive stress exists that would originate from the formation of microvoids during the deposition. These microvoids are preserved during the heat treatment of the films. The microvoid morphology would favor the formation of nanostructures that would be responsible for the improved electrochromic properties of the subzero dip-coated films. Low-temperature coated films, heated at 450°C for several hours, undergo the transformation from a layered to a highly uniform nanorod structure that would be an important feature for different applications.

  16. SnO{sub 2} thin films grown by atomic layer deposition using a novel Sn precursor

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Min-Jung [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Cho, Cheol Jin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744 (Korea, Republic of); Kim, Kwang-Chon; Pyeon, Jung Joon [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Kim, Hyo-Suk; Han, Jeong Hwan; Kim, Chang Gyoun; Chung, Taek-Mo [Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 305-600 (Korea, Republic of); Park, Tae Joo [Department of Materials Science and Engineering, Hanyang University, Ansan, 426-791 (Korea, Republic of); Kwon, Beomjin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Jeong, Doo Seok; Baek, Seung-Hyub [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of); Kang, Chong-Yun; Kim, Jin-Sang [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Kim, Seong Keun, E-mail: s.k.kim@kist.re.kr [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

    2014-11-30

    Highlights: • We developed a new ALD process for SnO{sub 2} films using dimethylamino-2-methyl-2-propoxy-tin(II) as a novel Sn precursor. • The SnO{sub 2} films grown from Sn(dmamp){sub 2} has negligible impurity contents. • Sn ions in the films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. - Abstract: SnO{sub 2} thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp){sub 2}) and O{sub 3} in a temperature range of 100–230 °C. The ALD window was found to be in the range of 100–200 °C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230 °C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp){sub 2} precursor. The SnO{sub 2} films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. The concentration of carbon and nitrogen in the all SnO{sub 2} films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO{sub 2} films with respect to the growth temperature. The ALD process with Sn(dmamp){sub 2} and O{sub 3} shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp){sub 2} and O{sub 3} is promising for growth of robust and highly pure SnO{sub 2} films.

  17. DLC Films Deposited by the DC PACVD Method

    Directory of Open Access Journals (Sweden)

    D. Palamarchuk

    2003-01-01

    Full Text Available DLC (Diamond-Like Carbon coatings have been suggested as protective surface layers against wear. However hard DLC coatings, especially those of greater thickness, have poor adhesion to substrates. We have used several ways to increase the adhesion of DLC coatings prepared by the PACVD (Plasma Assisted Chemical Vapour Deposition method on steel substrates. One of these is the DC PACVD method for preparing DLC films.

  18. DLC Films Deposited by the DC PACVD Method

    OpenAIRE

    D. Palamarchuk; M. Zoriy; J. Gurovič; F. Černý; S. Konvičková; I. Hüttel

    2003-01-01

    DLC (Diamond-Like Carbon) coatings have been suggested as protective surface layers against wear. However hard DLC coatings, especially those of greater thickness, have poor adhesion to substrates. We have used several ways to increase the adhesion of DLC coatings prepared by the PACVD (Plasma Assisted Chemical Vapour Deposition) method on steel substrates. One of these is the DC PACVD method for preparing DLC films.

  19. Thermoluminescence of Zn O thin films deposited by chemical bath

    International Nuclear Information System (INIS)

    Camacho A, M. C.; Cruz V, C.; Bernal H, R.; Berman M, D.; Castano M, V. M.

    2015-10-01

    Full text: Zn O films on Si were synthesized using a deposition method by chemical bath and thermally treated at 900 degrees C for 12 h in air. The morphological characterization by scanning electron microscopy reveals that uniform films were obtained. To investigate the thermoluminescent properties of the films were exposed to irradiation with beta particles with doses in the range from 0.5 to 128 Gy. The brightness curves obtained using a heating rate of 5 degrees C have two peaks, one at 124 and another at 270 degrees C, and a linear dependence of the integrated thermoluminescence as a function of dose. The second maximum reveals the existence of localized trapping states of potential utility in thermoluminescent dosimetry. (Author)

  20. Supercritical fluid molecular spray film deposition and powder formation

    Science.gov (United States)

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  1. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  2. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Olaya, J.J.; Huerta, L.; Rodil, S.E.; Escamilla, R.

    2008-01-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T C ). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T C values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T C was correlated to a higher contribution of the N 2p states

  3. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    International Nuclear Information System (INIS)

    Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

    2015-01-01

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

  4. Microstructural characterization of Ti-C-N thin films prepared by reactive crossed beam pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Escobar-Alarcon, L., E-mail: luis.escobar@inin.gob.mx [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Medina, V.; Camps, Enrique; Romero, S. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Fernandez, M. [Departamento de Aceleradores, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Solis-Casados, D. [Centro Conjunto de Investigacion en Quimica Sustentable, Facultad de Quimica UAEMex, km. 14.5 carr. Toluca-Atlacomulco (Mexico)

    2011-08-15

    In this work, Raman spectroscopy has been used to characterize Ti-C-N thin films in order to obtain information about the microstructure of the deposited materials, and in particular to study the effects due to the carbon incorporation into the TiN lattice. Ti-C-N thin films were prepared using a crossed plasma configuration in which the ablation of two different targets, titanium and carbon, in a reactive atmosphere was performed. With this configuration, the carbon content in the films was varied in an easy way from 5.0 at% to 40.0 at%. Thin film composition was determined from Non-Rutherford Backscattering Spectroscopy (NRBS) measurements. X-ray photoelectron spectroscopy and X-Ray diffraction measurements were also carried out in order to characterize the films in more detail, with this being used to give support to the interpretation of the Raman spectra. The Raman results revealed that at lower carbon concentrations a solid solution Ti(C, N) is formed, whilst at higher carbon concentrations a nanocomposite, consisting of nanocrystalline TiCN and TiC immersed in an amorphous carbon matrix is obtained.

  5. Carbon black nanoparticles film electrode prepared by using substrate-induced deposition approach.

    Science.gov (United States)

    Svegl, Irena Grabec; Bele, Marjan; Ogorevc, Bozidar

    2008-11-03

    A new type of carbon film electrode, composed of a thin layer of tightly packed carbon black (CB) nanoparticles deposited onto a gelatin-covered indium tin oxide/glass support using the surface-induced deposition (SID) approach, is presented. Some parameters of the novel SID method were optimized and the surface image and functionalization of the investigated carbon black film electrode (CBFE) was inspected by employing scanning electron microscopy and infrared spectroscopy. A cyclic voltammetry (CV) study was conducted in which the electron-transfer kinetics and CBFE interfacial characteristics were evaluated employing several selected reference redox systems, such as [Ru(NH(3))(6)](3+/2+), [Fe(CN)(6)](3-/4-) and Fe(3+/2+) in aqueous, and ferrocene/ferrocenium in acetonitrile media. CV recordings were also performed in order to compare the electrochemical behavior of the CBFE with that of some well-known and established bare carbon-based electrodes. In order to confirm the validity of the CB film preparation method, the electroanalytical performance of the proposed CBFE was examined by carrying out linear sweep voltammetry of ascorbic acid (AA), anodic stripping square-wave voltammetry of Cu(II) in acidic medium, and amperometric measurements of hydrogen peroxide under flow injection conditions. The sensing characteristics of the novel carbon film electrode, demonstrated in this preliminary study, comprise: (i) a wide working potential window ranging from +1.0 to -1.3 V (depending on the solution pH), (ii) a wide applicable pH range (at least from 2 to 12), (iii) low voltammetric background (0.99) to various analytes, (v) good reproducibility (for example, r.s.d. of 2% in amperometric detection of H(2)O(2) and r.s.d. of 8.5% for electrode-to-electrode CV runs), and (vi) stable and fast current response (at least 100 CV runs with negligible change in CV response). The main advantages of the proposed CBFE originate from the unique CB film formation procedure that

  6. NiCo2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors

    KAUST Repository

    Wang, Renqi

    2016-03-04

    Ternary transition metal oxides such as NiCo2O4 show great promise as supercapacitor electrode materials. However, the unsatisfactory rate performance of NiCo2O4 may prove to be a major hurdle to its commercial usage. Herein, we report the development of NiCo2O4@TiN core–shell nanostructures for all-solid-state supercapacitors with significantly enhanced rate capability. We demonstrate that a thin layer of TiN conformally grown by atomic layer deposition (ALD) on NiCo2O4 nanofiber arrays plays a key role in improving their electrical conductivity, mechanical stability, and rate performance. Fabricated using the hybrid NiCo2O4@TiN electrodes, the symmetric all-solid-state supercapacitor exhibited an impressive stack power density of 58.205 mW cm−3 at a stack energy density of 0.061 mWh cm−3. To the best of our knowledge, these values are the highest of any NiCo2O4-based all-solid-state supercapacitor reported. Additionally, the resulting NiCo2O4@TiN all-solid-state device displayed outstanding cycling stability by retaining 70% of its original capacitance after 20,000 cycles at a high current density of 10 mA cm−2. These results illustrate the promise of ALD-assisted hybrid NiCo2O4@TiN electrodes for sustainable and integrated energy storage applications.

  7. Deposition and Tribological Properties of Sulfur-Doped DLC Films Deposited by PBII Method

    Directory of Open Access Journals (Sweden)

    Nutthanun Moolsradoo

    2010-01-01

    Full Text Available Sulfur-doped diamond-like carbon films (S-DLC fabricated from C2H2 and SF6 mixtures were used to study the effects of sulfur content and negative pulse bias voltage on the deposition and tribological properties of films prepared by plasma-based ion implantation (PBII. The structure and relative concentration of the films were analyzed by Raman spectroscopy and Auger electron spectroscopy. Hardness and elastic modulus of films were measured by nanoindentation hardness testing. Tribological characteristics of films were performed using a ball-on-disk friction tester. The results indicate that with the increasing sulfur content, the hardness and elastic modulus decrease. Additionally, by changing the negative pulse bias voltage from 0 kV to −5 kV, the hardness and elastic modulus increase, while the friction coefficient and specific wear rate tends to decrease. Moreover, at a negative pulse bias voltage of −5 kV and flow-rate ratio of 1 : 2, there is considerable improvement in friction coefficient of 0.05 under ambient air is due to the formation of a transfer films on the interface. The decrease in the friction coefficient of films doped with 4.9 at.% sulfur is greater under high vacuum (0.03 than under ambient air (>0.1.

  8. Ellipsometric study of nanostructured carbon films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Bereznai, M.; Budai, J.; Hanyecz, I.; Kopniczky, J.; Veres, M.; Koos, M.; Toth, Z.

    2011-01-01

    When depositing carbon films by plasma processes the resulting structure and bonding nature strongly depends on the plasma energy and background gas pressure. To produce different energy plasma, glassy carbon targets were ablated by laser pulses of different excimer lasers: KrF (248 nm) and ArF (193 nm). To modify plume characteristics argon atmosphere was applied. The laser plume was directed onto Si substrates, where the films were grown. To evaluate ellipsometric measurements first a combination of the Tauc-Lorentz oscillator and the Sellmeier formula (TL/S) was applied. Effective Medium Approximation models were also used to investigate film properties. Applying argon pressures above 10 Pa the deposits became nanostructured as indicated by high resolution scanning electron microscopy. Above ∼ 100 and ∼ 20 Pa films could not be deposited by KrF and ArF laser, respectively. Our ellipsometric investigations showed, that with increasing pressure the maximal refractive index of both series decreased, while the optical band gap starts with a decrease, but shows a non monotonous course. Correlation between the size of the nanostructures, bonding structure, which was followed by Raman spectroscopy and optical properties were also investigated.

  9. Retention of heavy metals on layered double hydroxides thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 76900 Bucharest-Magurele (Romania); Birjega, R.; Matei, A.; Luculescu, C.; Mitu, B.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 76900 Bucharest-Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania)

    2014-05-01

    Heavy metals are toxic and hazardous pollutants in the environment due to their nonbiodegradability and persistence, which can pose serious threats to living organisms. The ability of Mg–Al based layered double hydroxides (LDHs) thin films to retain heavy metals from aqueous solutions at different concentrations is a novel topic with prospects of attractive applications, such as detection of heavy metals. We report on the ability of a series of Mg–Al based layered double hydroxides thin films to detect Ni and Co cations in aqueous solutions. Uptake of heavy metals ions such as Ni{sup 2+}, Co{sup 2+} from aqueous solutions was studied as function of contact time at a standard metal ion concentration. The LDHs thin films were deposited using pulsed laser deposition (PLD). The different adsorption mechanisms were studied in connection with different heavy metals used as probe cations. X-ray diffraction, atomic force microscopy, scanning electron microscopy coupled with energy dispersive X-ray spectroscopy, Fourier transform infra-red spectroscopy were the techniques used for the investigation of as deposited and after heavy metals retention thin films.

  10. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  11. Contact chain measurements for ultrathin conducting films

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2009-01-01

    Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on electrodes on which the ultrathin film is deposited. The contact resistance of the buried electrodes to the ultrathin ALD TiN films is investigated using contact chain structures. This work

  12. Morphology evolution in spinel manganite films deposited from an aqueous solution

    International Nuclear Information System (INIS)

    Ko, Song Won; Li, Jing; Trolier-McKinstry, Susan

    2012-01-01

    Spinel manganite films were deposited by the spin spray technique at low deposition temperatures ( 1000, agglomeration of small particles was dominant, which suggests that homogeneous nucleation is dominant during deposition. Heterogeneous nucleation was critical to obtain dense films. - Highlights: ► Film microstructure depends on supersaturation. ► Heterogeneous nucleation induces dense and continuous films. ► The spin spray technique enables use of a variety of substrates.

  13. Enhanced Optical Absorption of Ti Thin Film: Coupled Effect of Deposition and Post-deposition Temperatures

    Science.gov (United States)

    Jaiswal, Jyoti; Mourya, Satyendra; Malik, Gaurav; Chauhan, Samta; Daipuriya, Ritu; Singh, Manpreet; Chandra, Ramesh

    2017-11-01

    In the present work, structural, morphological and optical properties of nanostructured titanium (Ti) thin films have been studied. The Ti thin films were fabricated on glass substrate by direct current (DC) magnetron sputtering at varying deposition and post-deposition temperatures ( T DA) ranging from 373 K to 773 K. The microstructure and morphology of the Ti thin films were found to be highly dependent on T DA. The root mean square surface roughness ( δ rms) was found to increase with T DA up to 673 K and then decreased at 773 K. The absorption ( A) of Ti films has shown a similar trend as roughness with T DA; however, the reflection ( R) has shown an opposite trend. Maximum A 99-86% and minimum R 1-14% were observed in the spectral range of 300-1100 nm for the sample fabricated at T DA = 673 K, which exhibited the highest δ rms 193 nm. Due to its excellent absorption, this film may be a potential candidate for photonic applications such as a super-absorber.

  14. Advances in pulsed laser deposition growth of nitride thin films

    Science.gov (United States)

    Fernandez, Felix E.; Pumarol, Manuel; Martinez, Antonio; Jia, Weiyi; Wang, Yanyung; Rodriguez, Edgardo; Mourad, Houssam A.

    1999-07-01

    Pulsed laser deposition of nitride semiconductor films offers an alternative to more usual techniques, such as MOCVD and MBE. PLD can produce good quality films at reduced growth temperatures. Rapid progress has been achieved in the laser few years, including demonstrations of epitaxial growth of GaN directly on sapphire. Work on PLD of direct- transition III- nitrides is briefly reviewed and our recent results for these materials are presented. Growth of these nitrides requires provision of nitrogen in a reactive form, which is usually supplied by NH3 gas flow. With the approach described here, reactive nitrogen is provided in an atomic beam, which has the advantage of reducing dependence on substrate temperature to surmount the kinetic energy barrier for formation, while eliminating a source of hydrogen during growth. Films grown from ceramic GaN targets are compared with those grown from liquid Ga. The latter method can offer better control of unintentional doping. InN films were also grown directly from In metal targets, with very good results in term so stoichiometry and crystalline quality. AlN films were grown from ceramic AlN targets, with excellent texture at reduced temperatures. Results are presented for crystal structure, composition and surface morphology. Optical properties were studied by transmission and luminescence spectroscopy.

  15. An economic CVD technique for pure SnO2 thin films deposition ...

    Indian Academy of Sciences (India)

    have been widely used for a long time in opto-electronics industries as well as in research fields. Tin oxide films have, besides a high transparency and a low ... coating of glass containers and infrared reflectors for glass windows (Chopra et al 1983; Takahashi et al 2000; Haga et al. 2001; Salehi 2003; Medvedeva and ...

  16. Short review on chemical bath deposition of thin film and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Mugle, Dhananjay, E-mail: dhananjayforu@gmail.com; Jadhav, Ghanshyam, E-mail: ghjadhav@rediffmail.com [Depertment of Physics, Shri Chhatrapati Shivaji College, Omerga-413606 (India)

    2016-05-06

    This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

  17. Surface characterization of sol–gel derived indium tin oxide films on ...

    Indian Academy of Sciences (India)

    Unknown

    mental moisture trapped in the film surface. In addition, contamination of carbon from environment cannot be ruled out. As hydrogen atoms have higher ... be due to the condensation of two –OH groups of two In–. OH entities producing relatively high crystalline envi- ronment in ITO. Figure 2. Results of peak analysis of O1s ...

  18. Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode

    NARCIS (Netherlands)

    Kaleli, B.; Nguyen, Duc Minh; Schmitz, Jurriaan; Wolters, Robertus A.M.; Hueting, Raymond Josephus Engelbart

    2014-01-01

    We realized metal-ferroelectric-metal (MFM) capacitors comprising high-quality ferroelectric lead zirconate titanate (Pb(Zr0.52Ti0.48)O3 or PZT) thin films on an LaNiO3/poly-Si/titanium nitride (TiN)/SiO2 integrated on a 100 mm Si wafer. Promising effective piezoelectric coefficient and remnant

  19. Study of optical characteristics of tin oxide thin film prepared by sol ...

    Indian Academy of Sciences (India)

    Optical characteristics and physical properties like refractive index, absorption coefficient and thickness of thin film were calculated from the study of transmission spectrum (wavelength vs transmission curve) data given by UV/VIS Spectrophotometer. Effect of number of coatings on transmittance and refractive index was ...

  20. Study of optical characteristics of tin oxide thin film prepared by sol ...

    Indian Academy of Sciences (India)

    SnO2 thin film was synthesized on a glass substrate (Corn- ing 7059) by novel sol–gel dip coating technique. ... solution concentration, heat treatment temperature and with- drawal speed. According to Schroeder (1969), ... side of the substrate was required, so other side coat was removed by means of a sharp edge.

  1. Transparent conducting films of indium tin oxide with 3D mesopore architecture

    Czech Academy of Sciences Publication Activity Database

    Fattakhova Rohlfing, D.; Brezesinski, T.; Rathouský, Jiří; Feldhoff, A.; Oekermann, T.; Wark, M.; Smarsly, B.

    2006-01-01

    Roč. 18, č. 22 (2006), s. 2980-2983 ISSN 0935-9648 Institutional research plan: CEZ:AV0Z40400503 Keywords : thin films * transition * generation * electrodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 7.896, year: 2006

  2. Template-assisted preparation of films of transparent conductive indium tin oxide

    Czech Academy of Sciences Publication Activity Database

    Fattakhova Rohlfing, D.; Brezesinski, T.; Smarsly, B.; Rathouský, Jiří

    2008-01-01

    Roč. 44, 4-5 (2008), s. 686-692 ISSN 0749-6036 R&D Projects: GA ČR GA104/08/0435 Institutional research plan: CEZ:AV0Z40400503 Keywords : mesoporous films * ITO * KLE block-copolymer * electric conductivity Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.211, year: 2008

  3. Antimony doped tin oxide nanoparticles and their assembly in mesostructured film

    Czech Academy of Sciences Publication Activity Database

    Müller, V.; Rasp, M.; Stefanic, G.; Günther, S.; Rathouský, Jiří; Niederberger, M.; Fattakhova-Rohlfing, D.

    2011-01-01

    Roč. 8, č. 6 (2011), s. 1759-1763 ISSN 1862-6351 R&D Projects: GA ČR GA104/08/0435 Institutional research plan: CEZ:AV0Z40400503 Keywords : transparent conducting oxides * mesoporous films * nanoparticles Subject RIV: CF - Physical ; Theoretical Chemistry

  4. Liquid films and droplet deposition in a BWR fuel element

    International Nuclear Information System (INIS)

    Damsohn, M.

    2011-01-01

    In the upper part of boiling water reactors (BWR) the flow regime is dominated by a steam-water droplet flow with liquid films on the nuclear fuel rod, the so called (wispy) annular flow regime. The film thickness and liquid flow rate distribution around the fuel rod play an important role especially in regard to so called dryout, which is the main phenomenon limiting the thermal power of a fuel assembly. The deposition of droplets in the liquid film is important, because this process sustains the liquid film and delays dryout. Functional spacers with different vane shapes have been used in recent decades to enhance droplet deposition and thus create more favorable conditions for heat removal. In this thesis the behavior of liquid films and droplet deposition in the annular flow regime in BWR bundles is addressed by experiments in an adiabatic flow at nearly ambient pressure. The experimental setup consists of a vertical channel with the cross-section resembling a pair of neighboring subchannels of a fuel rod bundle. Within this double subchannel an annular flow is established with a gas-water mixture. The impact of functional spacers on the annular flow behavior is studied closely. Parameter variations comprise gas and liquid flow rates, gas density and spacer shape. The setup is instrumented with a newly developed liquid film sensor that measures the electrical conductance between electrodes flush to the wall with high temporal and spatial resolution. Advanced post-processing methods are used to investigate the dynamic behavior of liquid films and droplet deposition. The topic is also assessed numerically by means of single-phase Reynolds-Averaged-Navier-Stokes CFD simulations of the flow in the gas core. For this the commercial code STAR-CCM+ is used coupled with additional models for the liquid film distribution and droplet motion. The results of the experiments show that the liquid film is quite evenly distributed around the circumference of the fuel rods. The

  5. Spray deposited Mg-doped SnO{sub 2} thin film LPG sensor: XPS and EDX analysis in relation to deposition temperature and doping

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, Boben, E-mail: dr.boben1@gmail.com; Skariah, Benoy

    2015-03-15

    Highlights: • Mg doped SnO{sub 2} thin film significantly improves the LPG response to 93%. • Mg doping concentration up to 0.9 wt% is helpful in decreasing the grain size. • The O/Sn ratio supports excess oxygen in films whereas XPS suggests dissimilar chemical states. • Doping leads to an enhanced oxygen adsorption by a favourable crystallite orientation. • Adsorbed oxygen ions responsible for enhanced response can be perceived at the grain boundaries or at the surface, on account of the absence in the crystalline matrix. - Abstract: Magnesium doped SnO{sub 2} polycrystalline thin films are deposited by Spray pyrolysis by adding small amount of Mg between 0.3 and 1.2 wt%. Mg doping significantly modifies the gas sensing properties of tin oxide thin films by yielding (1 1 0) and (1 0 1) crystallite orientation to accommodate oxygen vacancies which lead to enhanced oxygen adsorption. A correlation is established between the crystallite orientation and the gas sensing magnitude by plotting the texture coefficient. The structure, surface chemical composition, and the optical and electrical properties are studied in relation to the gas sensing magnitude. It is shown that the magnesium doping in SnO{sub 2} maintains tetragonal rutile structure in stable cassiterite phase over low doping concentrations. The grain dimensions are influenced by both doping concentration and substrate temperature. Electronic surface states identified by the XPS are deconvoluted to establish the constituent oxygen states, while the EDX compositional analysis indicates added oxygen adsorption. As the temperature is raised for the response measurement, the adsorbed oxygen may transform to O{sup −} or O{sup 2−} which is supported by the increase of film resistance. It is shown that the sensor response to LPG is improved significantly (93%) by the addition of minor amounts of Mg to SnO{sub 2} thin film sensors.

  6. Roughness evolution in Ga doped ZnO films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Liu Yunyan; Cheng Chuanfu; Yang Shanying; Song Hongsheng; Wei Gongxiang; Xue Chengshan; Wang Yongzai

    2011-01-01

    We analyze the morphology evolution of the Ga doped ZnO(GZO) films deposited on quartz substrates by a laser deposition system. The surface morphologies of the film samples grown with different times are measured by the atomic force microscope, and they are analyzed quantitatively by using the image data. In the initial stage of the growth time shorter than 8 min, our analysis shows that the GZO surface morphologies are influenced by such factors as the random fluctuations, the smoothening effects in the deposition, the lateral strain and the substrate. The interface width uw(t) and the lateral correlation length ξ(t) at first decrease with deposition time t. For the growth time larger than 8 min, w(t) and ξ(t) increase with time and it indicates the roughening of the surface and the surface morphology exhibits the fractal characteristics. By fitting data of the roughness w(t) versus deposition time t larger than 4 min to the power-law function, we obtain the growth exponent β is 0.3; and by the height-height correlation functions of the samples to that of the self-affine fractal model, we obtain the value of roughness exponent α about 0.84 for all samples with different growth time t.

  7. Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells

    International Nuclear Information System (INIS)

    Jin, Bin Bin; Wang, Ye Feng; Wang, Xue Qing; Zeng, Jing Hui

    2016-01-01

    Highlights: • PbSe thin film is deposited on FTO glass by a pulse voltage electrodeposition method. • The thin film is used as counter electrode (CE) in quantum dot-sensitized solar cell. • Superior electrocatalytic activity and stability in the polysulfide electrolyte is received. • The narrow band gap characteristics and p-type conductivity enhances the cell efficiency. • An efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells. - Abstract: Lead selenide (PbSe) thin films were deposited on fluorine doped tin oxide (FTO) glass by a facile one-step pulse voltage electrodeposition method, and used as counter electrode (CE) in CdS/CdSe quantum dot-sensitized solar cells (QDSSCs). A power conversion efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells, which is much better than that of 2.39% received using Pt CEs. The enhanced performance is attributed to the extended absorption in the near infrared region, superior electrocatalytic activity and p-type conductivity with a reflection of the incident light at the back electrode in addition. The physical and chemical properties were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), reflectance spectra, electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The present work provides a facile pathway to an efficient CE in the QDSSCs.

  8. Structure and properties of TiC, VC, and TiC/VC thin films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Krzanowski, J.E.; Leuchtner, R.E.

    1996-01-01

    A study has been conducted on the mechanical, tribological and chemical properties of pulsed laser deposited (PLD) TiC, VC and TiC/VC thin films. The TiC films were deposited at 375 C and 5 mTorr Ar, while the TiC/VC films were deposited from a composite target at 475 C at pressures of base vacuum and 50 mTorr Ar. XRD analysis revealed the films had the expected B1 structure, although XPS analysis showed a significant oxygen content. Tribological studies were conducted using a ball-on-disk test, and the wear behavior depended on the surface condition and film composition. One TiC/VC film exhibited little wear but caused significant ball wear, indicating mixed carbide films are promising candidates for wear-resistant coatings

  9. Plasma-polymerized SiOx deposition on polymer film surfaces for preparation of oxygen gas barrier polymeric films

    International Nuclear Information System (INIS)

    Inagaki, N.

    2003-01-01

    SiOx films were deposited on surfaces of three polymeric films, PET, PP, and Nylon; and their oxygen gas barrier properties were evaluated. To mitigate discrepancies between the deposited SiOx and polymer film, surface modification of polymer films was done, and how the surface modification could contribute to was discussed from the viewpoint of apparent activation energy for the permeation process. The SiOx deposition on the polymer film surfaces led to a large decrease in the oxygen permeation rate. Modification of polymer film surfaces by mans of the TMOS or Si-COOH coupling treatment in prior to the SiOx deposition was effective in decreasing the oxygen permeation rate. The cavity model is proposed as an oxygen permeation process through the SiOx-deposited Nylon film. From the proposed model, controlling the interface between the deposited SiOx film and the polymer film is emphasized to be a key factor to prepare SiOx-deposited polymer films with good oxygen gas barrier properties. (author)

  10. Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

    Science.gov (United States)

    Rami, M.; Benamar, E.; Fahoume, M.; Chraibi, F.; Ennaoui, A.

    1999-06-01

    The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivitiy have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70-80 % range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells.

  11. Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rami, M.; Benamar, E.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [University Mohamed V, Laboratory of Materials Physics, Dept., Faculty of Sciences, Rabat (Morocco)

    1999-06-01

    The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivity have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70-80% range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells. (authors)

  12. Optimization and testing of solid thin film lubrication deposition processes

    Science.gov (United States)

    Danyluk, Michael J.

    A novel method for testing solid thin films in rolling contact fatigue (RCF) under ultra-high vacuum (UHV) and high rotational speeds (130 Hz) is presented in this thesis. The UHV-RCF platform is used to quantify the adhesion and lubrication aspects of two thin film coatings deposited on ball-bearings using a physical vapor deposition ion plating process. Plasma properties during ion plating were measured using a Langmuir probe and there is a connection between ion flux, film stress, film adhesion, process voltage, pressure, and RCF life. The UHV-RCF platform and vacuum chamber were constructed using off-the-shelf components and 88 RCF tests in high vacuum have been completed. Maximum RCF life was achieved by maintaining an ion flux between 10 13 to 1015 (cm-2 s-1) with a process voltage and pressure near 1.5 kV and 15 mTorr. Two controller schemes were investigated to maintain optimal plasma conditions for maximum RCF life: PID and LQR. Pressure disturbances to the plasma have a detrimental effect on RCF life. Control algorithms that mitigate pressure and voltage disturbances already exist. However, feedback from the plasma to detect disturbances has not been explored related to deposition processes in the thin-film science literature. Manometer based pressure monitoring systems have a 1 to 2 second delay time and are too slow to detect common pressure bursts during the deposition process. Plasma diagnostic feedback is much faster, of the order of 0.1 second. Plasma total-current feedback was used successfully to detect a typical pressure disturbance associated with the ion plating process. Plasma current is related to ion density and process pressure. A real-time control application was used to detect the pressure disturbance by monitoring plasma-total current and converting it to feedback-input to a pressure control system. Pressure overshoot was eliminated using a nominal PID controller with feedback from a plasma-current diagnostic measurement tool.

  13. Direct comparison of photoemission spectroscopy and in situ Kelvin probe work function measurements on indium tin oxide films

    International Nuclear Information System (INIS)

    Beerbom, M.M.; Laegel, B.; Cascio, A.J.; Doran, B.V.; Schlaf, R.

    2006-01-01

    The work function of commercially available indium tin oxide (ITO) films on glass substrates was measured using photoemission spectroscopy (PES) and ultra-high vacuum (UHV) Kelvin probe in direct comparison. Absolute Kelvin probe work function values were determined via calibration of the measured contact potential difference (CPD) using an in situ sputtered Au reference sample. The Kelvin probe data confirmed that ultraviolet photoemission spectroscopy (UPS) measurements change the work function of ITO surfaces previously exposed to ambient environment, when measured without in situ surface cleaning procedures. The results also demonstrate that both Kelvin probe and PES yield virtually identical work function values, as long as the Kelvin probe data are calibrated against a known standard. As a consequence, previously reported higher work function values determined with Kelvin probe as compared to values obtained with UPS on similar samples are likely related to a photochemically generated surface dipole during UPS measurements. Comparison between Kelvin probe and low intensity X-ray photoemission spectroscopy (LIXPS) work function measurements demonstrated that accurate work function measurements on ITO previously exposed to the ambient are possible with PES

  14. Functionalization of indium-tin-oxide electrodes by laser-nanostructured gold thin films for biosensing applications

    Science.gov (United States)

    Grochowska, Katarzyna; Siuzdak, Katarzyna; Karczewski, Jakub; Śliwiński, Gerard

    2015-12-01

    The production and properties of the indium-tin-oxide (ITO) electrodes functionalized by Au nanoparticle (NP) arrays of a relatively large area formed by pulsed laser nanostructuring of thin gold films are reported and discussed. The SEM inspection of modified electrodes reveals the presence of the nearly spherical and disc-shaped particles of dimensions in the range of 40-120 nm. The NP-array geometry can be controlled by selection of the laser processing conditions. It is shown that particle size and packing density of the array are important factors which determine the electrode performance. In the case of NP-modified electrodes the peak current corresponding to the glucose direct oxidation process shows rise with increasing glucose concentration markedly higher comparing to the reference Au disc electrode. The detection limit reaches 12 μM and linear response of the sensor is observed from 0.1 to 47 mM that covers the normal physiological range of the blood sugar detection.

  15. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  16. Tribological behavior of in situ Ag nanoparticles/polyelectrolyte composite molecular deposition films

    International Nuclear Information System (INIS)

    Guo Yanbao; Wang Deguo; Liu Shuhai

    2010-01-01

    Multilayer polyelectrolyte films containing silver ions were obtained by molecular deposition method on a glass plate or a quartz substrate. The in situ Ag nanoparticles were synthesized in the multilayer polyelectrolyte films which were put into fresh NaBH 4 aqueous solution. The structure and surface morphology of composite molecular deposition films were observed by UV-vis spectrophotometer, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Tribological characteristic was investigated by AFM and micro-tribometer. It was found that the in situ Ag nanoparticles/polyelectrolyte composite molecular deposition films have lower coefficient of friction and higher anti-wear life than pure polyelectrolyte molecular deposition films.

  17. Controlled Mechanical Crac