Stability Improvements of an LCL-filter based Three-phase Active Rectifier

DEFF Research Database (Denmark)

Liserre, Marco; Dell'Aquila, Antonio; Blaabjerg, Frede

2002-01-01

Three-phase active rectifiers guarantee sinusoidal input currents and controllable dc voltage at the price of a high switching frequency ripple that can disturb and reduce efficiency of other EMI sensitive equipment connected to the grid. This problem could be solved choosing a high value...

A Novel Current-Mode Full-Wave Rectifier Based on One CDTA and Two Diodes

Directory of Open Access Journals (Sweden)

F. Khateb

2010-09-01

Full Text Available Precision rectifiers are important building blocks for analog signal processing. The traditional approach based on diodes and operational amplifiers (OpAmps exhibits undesirable effects caused by limited OpAmp slew rate and diode commutations. In the paper, a full-wave rectifier based on one CDTA and two Schottky diodes is presented. The PSpice simulation results are included.

Wideband Small-Signal Input dq Admittance Modeling of Six-Pulse Diode Rectifiers

DEFF Research Database (Denmark)

Yue, Xiaolong; Wang, Xiongfei; Blaabjerg, Frede

2018-01-01

This paper studies the wideband small-signal input dq admittance of six-pulse diode rectifiers. Considering the frequency coupling introduced by ripple frequency harmonics of d-and q-channel switching function, the proposed model successfully predicts the small-signal input dq admittance of six......-pulse diode rectifiers in high frequency regions that existing models fail to explain. Simulation and experimental results verify the accuracy of the proposed model....

Direct Power Control for Three-Phase Two-Level Voltage-Source Rectifiers Based on Extended-State Observation

DEFF Research Database (Denmark)

Song, Zhanfeng; Tian, Yanjun; Yan, Zhuo

2016-01-01

This paper proposed a direct power control strategy for three-phase two-level voltage-source rectifiers based on extended-state observation. Active and reactive powers are directly regulated in the stationary reference frame. Similar to the family of predictive controllers whose inherent characte......This paper proposed a direct power control strategy for three-phase two-level voltage-source rectifiers based on extended-state observation. Active and reactive powers are directly regulated in the stationary reference frame. Similar to the family of predictive controllers whose inherent...

Fully controlled 5-phase, 10-pulse, line commutated rectifier

Directory of Open Access Journals (Sweden)

Mahmoud I. Masoud

2015-12-01

Full Text Available The development and production of multiphase machines either generators or motors, specially five-phase, offers improved performance compared to three-phase counterpart. Five phase generators could generate power in applications such as, but not limited to, wind power generation, electric vehicles, aerospace, and oil and gas. The five-phase generator output requires converter system such as ac–dc converters. In this paper, a fully controlled 10-pulse line commutated rectifier, suitable to be engaged with wind energy applications, fed from five-phase source is introduced. A shunt active power filter (APF is used to improve power factor and supply current total harmonic distortion (THD. Compared to three-phase converters, 6-pulse or 12-pulse rectifiers, the 10-pulse rectifier engaged with 5-phase source alleviate their drawbacks such as high dc ripples and no need for electric gear or phase shifting transformer. MATLAB/SIMULINK platform is used as a simulation tool to investigate the performance of the proposed rectifier.

High Efficiency Three-phase Power Factor Correction Rectifier using Wide Band-Gap Devices

DEFF Research Database (Denmark)

Kouchaki, Alireza

Improving the conversion efficiency of power factor correction (PFC) rectifiers has become compelling due to their wide applications such as adjustable speed drives, uninterruptible power supplies (UPS), and battery chargers for electric vehicles (EVs). The attention to PFCs has increased even more....... Therefore, current controllers are also important to be investigated in this project. In this PhD research work, a comprehensive design of a two-level three-phase PFC rectifier using silicon-carbide (SiC) switches to achieve high efficiency is presented. The work is divided into two main parts: 1) Optimum...

Design Research on Three-Phase PWM Rectifier Based on Double Closed Loop Control Technology

Directory of Open Access Journals (Sweden)

Guang Ya LIU

2014-02-01

Full Text Available Based on the high frequency of three-phase voltage source PWM rectifier, this paper established a mathematical model of three phase current inner ring and outer ring voltage, and put forward the setting method of three phase double closed loop control. Finally, it was verified through simulation. The experimental results show that Three-phase output of DC voltage is stable with the operation of regulating systems, the current flowing into the grid tends to be sinusoidal and power factor is close to 1, which greatly reduce the interference of harmonics on the grid, thus improve grid operation.

High Power Factor Hybrid Rectifier | Odeh | Nigerian Journal of ...

African Journals Online (AJOL)

This paper presents the analysis of a new single-phase hybrid rectifier with high power factor (PF) and low harmonic distortion current. The proposed rectifier structure is composed of an ordinary single-phase diode rectifier with parallel connection of a switched converter. It is outlined that the switched converter is capable of ...

Influence of load type on power factor and harmonic composition of three-phase rectifier current

Science.gov (United States)

Nikolayzin, N. V.; Vstavskaya, E. V.; Konstantinov, V. I.; Konstantinova, O. V.

2018-05-01

This article is devoted to research of the harmonic composition of the three-phase rectifier current consumed when it operates with different types of load. The results are compared with Standard requirements.

Characterization of Schottky barrier diodes fabricated from electrochemical oxidation of {alpha} phase brass

Energy Technology Data Exchange (ETDEWEB)

Bond, John W., E-mail: jwb13@le.ac.u [Forensic Research Centre, University of Leicester, Leicester LE1 7 EA (United Kingdom)

2011-04-01

By careful selection of chloride ion concentration in aqueous sodium chloride, electrochemical oxidation of {alpha} phase brass is shown to permit fabrication of either p-type copper (I) oxide/metal or n-type zinc oxide/metal Schottky barrier diodes. X-ray photoelectron and Auger electron spectroscopies provide evidence that barrier formation and rectifying qualities depend on the relative surface abundance of copper (I) oxide and zinc oxide. X-ray diffraction of the resulting diodes shows polycrystalline oxides embedded in amorphous oxidation products that have a lower relative abundance than the diode forming oxide. Conventional I/V characteristics of these diodes show good rectifying qualities. When neither of the oxides dominate, the semiconductor/metal junction displays an absence of rectification.

Low-Complexity Model Predictive Control of Single-Phase Three-Level Rectifiers with Unbalanced Load

DEFF Research Database (Denmark)

Ma, Junpeng; Song, Wensheng; Wang, Xiongfei

2018-01-01

The fluctuation of the neutral-point potential in single-phase three-level rectifiers leads to coupling between the line current regulation and dc-link voltage balancing, deteriorating the quality of line current. For addressing this issue, this paper proposes a low-complexity model predictive...

Genetic Algorithm-Based Design of the Active Damping for an LCL-Filter Three-Phase Active Rectifier

DEFF Research Database (Denmark)

Liserre, Marco; Aquila, Antonio Dell; Blaabjerg, Frede

2004-01-01

Active rectifiers/inverters are becoming used more and more often in regenerative systems and distributed power systems. Typically, the interface between the grid and rectifier is either an inductor or an LCL-filter. The use of an LCL-filter mitigates the switching ripple injected in the grid...... by a three-phase active rectifier. However, stability problems can arise in the current control loop. In order to overcome them, a damping resistor can be inserted, at the price of a reduction of efficiency. The use of active damping by means of control may seem attractive, but it is often limited by the use...

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

Science.gov (United States)

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

Frequency Support from OWPPs connected to HVDC via Diode Rectifiers

DEFF Research Database (Denmark)

Saborío-Romano, Oscar; Bidadfar, Ali; Göksu, Ömer

This paper presents a study assessing the actual capability of an offshore wind power plant (offshore WPP, OWPP) to provide frequency support (FS) to an onshore network, when connected through a high-voltage direct-current (HVDC) link having a diode rectifier (DR) offshore terminal and a voltage...

InGaAs-based planar barrier diode as microwave rectifier

Science.gov (United States)

Farhani Zakaria, Nor; Rizal Kasjoo, Shahrir; Zailan, Zarimawaty; Mohamad Isa, Muammar; Arshad, Mohd Khairuddin Md; Taking, Sanna

2018-06-01

In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current–voltage characteristics; thus it can be used as a rectifying device. The PBD’s working principle is explained using thermionic emission theory. Furthermore, by varying the PBD’s geometric design, the asymmetry of the current–voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V‑1 at a low DC bias voltage of 50 mV.

Analytical Design of Passive LCL Filter for Three-phase Two-level Power Factor Correction Rectifiers

DEFF Research Database (Denmark)

Kouchaki, Alireza; Nymand, Morten

2017-01-01

This paper proposes a comprehensive analytical LCL filter design method for three-phase two-level power factor correction rectifiers (PFCs). The high frequency converter current ripple generates the high frequency current harmonics that need to be attenuated with respect to the grid standards...

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

Directory of Open Access Journals (Sweden)

Mohammad Reza Shokrani

2014-01-01

Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

A Smart Current Modulation Scheme for Harmonic Reduction in Three- Phase Motor Drive Applications

DEFF Research Database (Denmark)

Davari, Pooya; Zare, Firuz; Blaabjerg, Frede

2015-01-01

Electric motor-driven systems consume considerable amount of the global electricity. Majority of three-phase motor drives are equipped with conventional diode rectifier and passive harmonic mitigation, being witnessed as the main source in generating input current harmonics. While many active har...

A Multipulse Pattern Modulation Scheme for Harmonic Mitigation in Three-Phase Multimotor Drives

DEFF Research Database (Denmark)

Davari, Pooya; Yang, Yongheng; Zare, Firuz

2016-01-01

, which thus deteriorates the power grid quality and also lowers the conversion efficiency. Both degradations are apt to occur in motor drive applications. At present, many industrial drives are equipped with three-phase diode rectifiers and employ passive filtering techniques on the AC or DC side...

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

Energy Technology Data Exchange (ETDEWEB)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

Energy Saving in Three-Phase Diode Rectifiers Using EI Technique with Adjustable Switching Frequency Scheme

DEFF Research Database (Denmark)

Davari, Pooya; Zare, Firuz; Yang, Yongheng

2016-01-01

A front-end rectifier can significantly impact a power electronics system performance and efficiency for applications such as motor drive where the system commonly operates under partial loading conditions. This paper proposes an adjustable switching frequency scheme using an electronic inductor...

Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers

International Nuclear Information System (INIS)

Chen, Wei-Chung; Hsu, Po-Ching; Chien, Chih-Wei; Chang, Kuei-Ming; Hsu, Chao-Jui; Chang, Ching-Hsiang; Lee, Wei-Kai; Chou, Wen-Fang; Wu, Chung-Chih; Hsieh, Hsing-Hung

2014-01-01

In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu 2 O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu 2 O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 × 10 4 at ±1.2 V, a high forward current of 1 A cm −2 around 1 V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu 2 O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics. (paper)

Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

Science.gov (United States)

Maji, Nilay; Nath, T. K.

2018-04-01

The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

Connection of OWPPs to HVDC networks using VSCs and Diode Rectifiers: an Overview

DEFF Research Database (Denmark)

Saborío-Romano, Oscar; Bidadfar, Ali; Göksu, Ömer

This paper provides an overview of two technologies for connecting offshore wind power plants (offshore WPPs, OWPPs) to high-voltage direct current (HVDC) networks: voltage source converters (VSCs) and diode rectifiers (DRs). Current grid code requirements for the connection of such power plants...

Harmonic Distortion of Rectifier Topologies for Adjustable Speed Drives

DEFF Research Database (Denmark)

Hansen, Steffan

This thesis deals with the harmonic distortion of the diode rectifier and a number of alternative rectifier topologies for adjustable speed drives. The main intention of this thesis is to provide models and tools that allow easy prediction of the harmonic distortion of ASD’s in a given system...... rectifier are presented. The first level is an ideal model where the diode rectifier basically is treated as an independent (harmonic) current source. The second level is an empirical model, where simulated (or measured) values of the harmonic currents of the diode rectifier for different parameters......-angle of the individual harmonic currents of different diode rectifier types is analyzed. Four selected rectifier topologies with a high input power factor are presented. It is shown that using ac- or dc-coils is a very simple and efficient method to reduce the harmonic currents compared to the basic diode rectifier...

A Single Phase to Three Phase PFC Half-Bridge Converter Using BLDC Drive with SPWM Technique.

OpenAIRE

Srinu Duvvada; Manmadha Kumar B

2014-01-01

In this paper, a buck half-bridge DC-DC converter is used as a single-stage power factor correction (PFC) converter for feeding a voltage source inverter (VSI) based permanent magnet brushless DC motor (BLDC) drive. The front end of this PFC converter is a diode bridge rectifier (DBR) fed from single-phase AC mains. The BLDC is used to drive a compressor load of an air conditioner through a three-phase VSI fed from a controlled DC link voltage. The speed of the compressor is controlled to ach...

Phase controlled rectifier study

International Nuclear Information System (INIS)

Bronner, G.; Murray, J.G.

1976-03-01

This report introduces the results of an engineering study incorporating a computer program to determine the transient and steady-state voltage and current wave shapes for a 12-pulse rectifier system. Generally, rectifier engineering studies are completed by making simplified assumptions and neglecting many circuit parameters. The studies incorporate the 3-phase AC parameters including nonlinear source or generator, 3-winding transformer impedances, and shunt and series capacitors. It includes firing angle control, and DC filter circuits with inductive loads

Power Factor Correction Capacitors for Multiple Parallel Three-Phase ASD Systems

DEFF Research Database (Denmark)

Yang, Yongheng; Blaabjerg, Frede

2017-01-01

Today’s three-phase Adjustable Speed Drive (ASD) systems still employ Diode Rectifiers (DRs) and Silicon-Controlled Rectifiers (SCRs) as the front-end converters due to structural and control simplicity, small volume, low cost, and high reliability. However, the uncontrollable DRs and phase......-controllable SCRs bring side-effects by injecting high harmonics to the grid, which will degrade the system performance in terms of lowering the overall efficiency and overheating the system if remain uncontrolled or unattenuated. For multiple ASD systems, certain harmonics in the entire system can be mitigated...... the power factor, passive capacitors can be installed, which yet can trigger the system resonance. Hence, this paper analyzes the resonant issues in multiple ASD systems with power factor correction capacitors. Potential damping solutions are summarized. Simulations are carried out, while laboratory tests...

Enhanced Phase-Shifted Current Control for Harmonic Cancellation in Three-Phase Multiple Adjustable Speed Drive Systems

DEFF Research Database (Denmark)

Yang, Yongheng; Davari, Pooya; Zare, Firuz

2017-01-01

A phase-shifted current control can be employed to mitigate certain harmonics induced by the Diode Rectifiers (DR) and Silicon-Controlled Rectifiers (SCR) as the front-ends of multiple parallel Adjustable Speed Drive (ASD) systems. However, the effectiveness of the phase-shifted control relies...... on the loading condition of each drive unit as well as the number of drives in parallel. In order to enhance the harmonic cancellation by means of the phase-shifted current control, the currents drawn by the rectifiers should be maintained almost at the same level. Thus, this paper firstly analyzes the impact...... of unequal loading among the parallel drives, and a scheme to enhance the performance is introduced to improve the quality of the total grid current, where partial loading operation should be enabled. Simulation and experimental case studies on multidrive systems have demonstrated that the enhanced phase...

Power-Quality-Oriented Optimization in Multiple Three-Phase Adjustable Speed Drives

DEFF Research Database (Denmark)

Yang, Yongheng; Davari, Pooya; Blaabjerg, Frede

2016-01-01

As an almost standardized configuration, Diode Rectifiers (DRs) and Silicon-Controlled Rectifiers (SCRs) are commonly employed as the front-end topology in three-phase Adjustable Speed Drive (ASD) systems. Features of this ASD configuration include: structural and control simplicity, small volume......, low cost, and high reliability during operation. Yet, DRs and SCRs bring harmonic distortions in the mains and thus lowering the overall efficiency. Power quality standards/rules are thus released. For multiple ASD systems, certain harmonics of the total grid current can be mitigated by phase......-shifting the currents drawn by SCR-fed drives, and thus it is much flexible to reduce the Total Harmonic Distortion (THD) level in such applications. However, the effectiveness of this harmonic mitigation scheme for multiple ASD systems depends on: a) the number of parallel drives, b) the power levels, and c...

Synchronous Half-Wave Rectifier

Science.gov (United States)

Rippel, Wally E.

1989-01-01

Synchronous rectifying circuit behaves like diode having unusually low voltage drop during forward-voltage half cycles. Circuit particularly useful in power supplies with potentials of 5 Vdc or less, where normal forward-voltage drops in ordinary diodes unacceptably large. Fabricated as monolithic assembly or as hybrid. Synchronous half-wave rectifier includes active circuits to attain low forward voltage drop and high rectification efficiency.

Diode-rectified multiphase AC arc for the improvement of electrode erosion characteristics

Science.gov (United States)

Tanaka, Manabu; Hashizume, Taro; Saga, Koki; Matsuura, Tsugio; Watanabe, Takayuki

2017-11-01

An innovative multiphase AC arc (MPA) system was developed on the basis of a diode-rectification technique to improve electrode erosion characteristics. Conventionally, electrode erosion in AC arc is severer than that in DC arc. This originated from the fact that the required properties for the cathode and anode are different, although an AC electrode works as the cathode and the anode periodically. To solve this problem, a separation of AC electrodes into pairs of thoriated tungsten cathode and copper anode by diode-rectification was attempted. A diode-rectified multiphase AC arc (DRMPA) system was then successfully established, resulting in a drastic improvement of the erosion characteristics. The electrode erosion rate in the DRMPA was less than one-third of that in the conventional MPA without the diode rectification. In order to clarify its erosion mechanism, electrode phenomena during discharge were visualized by a high-speed camera system with appropriate band-pass filters. Fluctuation characteristics of the electrode temperature in the DRMPA were revealed.

Robust and reliable rectifier based on electronic inductor with improved performance

DEFF Research Database (Denmark)

Singh, Yash Veer; Rasmussen, Peter Omand; Andersen, Torben Ole

2014-01-01

of the rectifier, peak to peak voltage ripples to the front end of the inverter reduces significantly by the ESI, and it increases lifetime of the capacitor connected at the output and also reduces the voltage stress of the active power semiconductors of the inverter if any connected to the output. In this paper...... harmonic distortions (THDs) of the ac mains current in a three phase diode bridge rectifier. The ESI reduces the low frequency ripples and controls the intermediate dc-link voltage to a dc value and peak value of the mains current also reduces. In case of an inverter connected to the output...

Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode.

Science.gov (United States)

Sarkar, K; Palit, M; Guhathakurata, S; Chattopadhyay, S; Banerji, P

2017-09-20

Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga 1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

Diode, transistor & fet circuits manual

CERN Document Server

Marston, R M

2013-01-01

Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Science.gov (United States)

Jin, Jidong; Zhang, Jiawei; Shaw, Andrew; Kudina, Valeriya N.; Mitrovic, Ivona Z.; Wrench, Jacqueline S.; Chalker, Paul R.; Balocco, Claudio; Song, Aimin; Hall, Steve

2018-02-01

Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer deposition and a PtOx Schottky contact deposited by reactive radio-frequency sputtering. The rectifier shows an ideality factor of 1.31, an effective barrier height of 0.79 eV, a rectification ratio of 1.17  ×  107, and cut-off frequency as high as 550 MHz. Low frequency noise measurements reveal that the rectifier has a low interface-state density of 5.13  ×  1012 cm-2 eV-1, and the noise is dominated by the mechanism of a random walk of electrons at the PtO x /ZnO interface. The work shows that the rectifier can be used for both noise sensitive and high frequency electronics applications.

Proposed Use of Zero Bias Diode Arrays as Thermal Electric Noise Rectifiers and Non-Thermal Energy Harvesters

Science.gov (United States)

Valone, Thomas F.

2009-03-01

The well known built-in voltage potential for some select semiconductor p-n junctions and various rectifying devices is proposed to be favorable for generating DC electricity at "zero bias" (with no DC bias voltage applied) in the presence of Johnson noise or 1/f noise which originates from the quantum vacuum (Koch et al., 1982). The 1982 Koch discovery that certain solid state devices exhibit measurable quantum noise has also recently been labeled a finding of dark energy in the lab (Beck and Mackey, 2004). Tunnel diodes are a class of rectifiers that are qualified and some have been credited with conducting only because of quantum fluctuations. Microwave diodes are also good choices since many are designed for zero bias operation. A completely passive, unamplified zero bias diode converter/detector for millimeter (GHz) waves was developed by HRL Labs in 2006 under a DARPA contract, utilizing a Sb-based "backward tunnel diode" (BTD). It is reported to be a "true zero-bias diode." It was developed for a "field radiometer" to "collect thermally radiated power" (in other words, 'night vision'). The diode array mounting allows a feed from horn antenna, which functions as a passive concentrating amplifier. An important clue is the "noise equivalent power" of 1.1 pW per root hertz and the "noise equivalent temperature difference" of 10° K, which indicate sensitivity to Johnson noise (Lynch, et al., 2006). There also have been other inventions such as "single electron transistors" that also have "the highest signal to noise ratio" near zero bias. Furthermore, "ultrasensitive" devices that convert radio frequencies have been invented that operate at outer space temperatures (3 degrees above zero point: 3° K). These devices are tiny nanotech devices which are suitable for assembly in parallel circuits (such as a 2-D array) to possibly produce zero point energy direct current electricity with significant power density (Brenning et al., 2006). Photovoltaic p-n junction

Three-phase current transformer rectifier sets. High-voltage power supplies for difficult conditions in electrostatic precipitators

Energy Technology Data Exchange (ETDEWEB)

Stackelberg, Josef von [Rico-Werk Eiserlo und Emmrich GmbH, Toenisvorst (Germany)

2013-04-01

The precipitation rate of electrostatic precipitators (ESP) highly depends on the consistency of waste gas. Among other things, electrical conductivity plays an important role as well as the ability of particles to be electrically charged or ionised. Within certain limits, common ESPs are able to clean waste gas satisfactorily. If the dust attributes exceed these limits, more sophisticated technical solutions are required in the ESP to meet the demands for the gas cleaning equipment. In these cases, a three phase transformer rectifier system offers an alternative to the conventional single phase system, as it delivers a smooth direct current voltage over a wide voltage range. (orig.)

A vector modulated three-phase four-quadrant rectifier - Application to a dc motor drive

Energy Technology Data Exchange (ETDEWEB)

Jussila, Matti; Salo, Mika; Kaehkoenen, Lauri; Tuusa, Heikki

2004-07-01

This paper introduces a theory for a space vector modulation of a three-phase four-quadrant PWM rectifier (FQR). The presented vector modulation method is simple to realize with a microcontroller and it replaces the conventional modulation methods based on the analog technology. The FQR may be used to supply directly a dc load, e.g. a dc machine. The vector modulated FQR is tested in simulations supplying a 4.5 kW dc motor. The simulations show the benefits of the vector modulated FQR against thyristor converters: the supply currents are sinusoidal and the displacement power factor of the supply can be controlled. Furthermore the load current is smooth. (author)

Rectifying the Optical-Field-Induced Current in Dielectrics: Petahertz Diode.

Science.gov (United States)

Lee, J D; Yun, Won Seok; Park, Noejung

2016-02-05

Investigating a theoretical model of the optical-field-induced current in dielectrics driven by strong few-cycle laser pulses, we propose an asymmetric conducting of the current by forming a heterojunction made of two distinct dielectrics with a low hole mass (m_{h}^{*}≪m_{e}^{*}) and low electron mass (m_{e}^{*}≪m_{h}^{*}), respectively. This proposition introduces the novel concept of a petahertz (10^{15}  Hz) diode to rectify the current in the petahertz domain, which should be a key ingredient for the electric signal manipulation of future light-wave electronics. Further, we suggest the candidate dielectrics for the heterojunction.

A two-phase full-wave superconducting rectifier

International Nuclear Information System (INIS)

Ariga, T.; Ishiyama, A.

1989-01-01

A two-phase full-wave superconducting rectifier has been developed as a small cryogenic power supply of superconducting magnets for magnetically levitation trains. Those magnets are operated in the persistent current mode. However, small ohmic loss caused at resistive joints and ac loss induced by the vibration of the train cannot be avoided. Therefore, the low-power cryogenic power supply is required to compensate for the reduction in magnet current. The presented superconducting rectifier consists of two identical full-wave rectifiers connected in series. Main components of each rectifier are a troidal shape superconducting set-up transformer and two thermally controlled switches. The test results using a 47.5 mH load magnet at 0.2 Hz and 0.5 Hz operations are described. To estimate the characteristics of the superconducting rectifier, the authors have developed a simulation code. From the experiments and the simulations, the transfer efficiency is examined. Furthermore, the optimal design of thermally controlled switches based on the finite element analysis is also discussed

A 2MW 6-phase BLDC Generator Developed from a PM Synchronous Generator for Wind Energy Application

DEFF Research Database (Denmark)

Chen, Zhuihui; Chen, Zhe; Liu, Xiao

2014-01-01

rectifier is adopted. The cases the with different loads are studied. The finite element simulation shows the developed BLDC generator is better than the PMSM generator in terms of DC voltage ripple and torque ripple. Furthermore, the volume of the BLDC generator is smaller, despite of more permanent magnet......In the direct drive wind turbine application, a PMSM generator often works together with a diode rectifier, which connects to a boost converter. In this paper, a six-phase BLDC generator is developed from the prototype design of three-phase permanent magnet synchronous generator. The diode...... is required. The efficiencies and the costs are also compared. As the result shows, BLDC generators connected with the diode rectifiers are good candidates for direct drive wind turbines....

Time-division-multiplex control scheme for voltage multiplier rectifiers

Directory of Open Access Journals (Sweden)

Bin-Han Liu

2017-03-01

Full Text Available A voltage multiplier rectifier with a novel time-division-multiplexing (TDM control scheme for high step-up converters is proposed in this study. In the proposed TDM control scheme, two full-wave voltage doubler rectifiers can be combined to realise a voltage quadrupler rectifier. The proposed voltage quadrupler rectifier can reduce transformer turn ratio and transformer size for high step-up converters and also reduce voltage stress for the output capacitors and rectifier diodes. An N-times voltage rectifier can be straightforwardly produced by extending the concepts from the proposed TDM control scheme. A phase-shift full-bridge (PSFB converter is adopted in the primary side of the proposed voltage quadrupler rectifier to construct a PSFB quadrupler converter. Experimental results for the PSFB quadrupler converter demonstrate the performance of the proposed TDM control scheme for voltage quadrupler rectifiers. An 8-times voltage rectifier is simulated to determine the validity of extending the proposed TDM control scheme to realise an N-times voltage rectifier. Experimental and simulation results show that the proposed TDM control scheme has great potential to be used in high step-up converters.

Rectifier cabinet static breaker

International Nuclear Information System (INIS)

Costantino, R.A. Jr; Gliebe, R.J.

1992-01-01

A rectifier cabinet static breaker replaces a blocking diode pair with an SCR and the installation of a power transistor in parallel with the latch contactor to commutate the SCR to the off state. The SCR serves as a static breaker with fast turnoff capability providing an alternative way of achieving reactor scram in addition to performing the function of the replaced blocking diodes. The control circuitry for the rectifier cabinet static breaker includes on-line test capability and an LED indicator light to denote successful test completion. Current limit circuitry provides high-speed protection in the event of overload. 7 figs

Rectifier cabinet static breaker

Science.gov (United States)

Costantino, Jr, Roger A.; Gliebe, Ronald J.

1992-09-01

A rectifier cabinet static breaker replaces a blocking diode pair with an SCR and the installation of a power transistor in parallel with the latch contactor to commutate the SCR to the off state. The SCR serves as a static breaker with fast turnoff capability providing an alternative way of achieving reactor scram in addition to performing the function of the replaced blocking diodes. The control circuitry for the rectifier cabinet static breaker includes on-line test capability and an LED indicator light to denote successful test completion. Current limit circuitry provides high-speed protection in the event of overload.

In situ ZnO nanowire growth to promote the PVDF piezo phase and the ZnO-PVDF hybrid self-rectified nanogenerator as a touch sensor.

Science.gov (United States)

Li, Zetang; Zhang, Xu; Li, Guanghe

2014-03-28

A PVDF-ZnO nanowires (NWs) hybrid generator (PZHG) was designed. A simple, cost effective method to produce the PVDF β phase by nano force is introduced. With the ZnO NWs growing, the in situ nano extension force promotes the phase change. A theoretical analysis of the ZnO NWs acting as a self-rectifier of the nano generator is established. The ZnO NWs acted as a self-adjustment diode to control the current output of the PZHG by piezo-electric and semi-conductive effects. Based on the self-controllability of the piezoelectric output, three kinds of finger touching are distinguished by the output performances of the PZHG, which is applicable to an LCD touch pad.

Nanofibrous p-n Junction and Its Rectifying Characteristics

Directory of Open Access Journals (Sweden)

Jian Fang

2013-01-01

Full Text Available Randomly oriented tin oxide (SnO2 nanofibers and poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate/polyvinylpyrrolidone (PEDOT:PSS/PVP nanofibers were prepared by a two-step electrospinning technique to form a layered fibrous mat. The current-voltage measurement revealed that the fibrous mat had an obvious diode-rectifying characteristic. The thickness of the nanofiber layers was found to have a considerable influence on the device resistance and rectifying performance. Such an interesting rectifying property was attributed to the formation of a p-n junction between the fibrous SnO2 and PEDOT:PSS/PVP layers. This is the first report that a rectifying junction can be formed between two layers of electrospun nanofiber mats, and the resulting nanofibrous diode rectifier may find applications in sensors, energy harvest, and electronic textiles.

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

Directory of Open Access Journals (Sweden)

Vinay Kabra

2014-11-01

Full Text Available A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V and capacitance–voltage (C–V measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

Full-wave current conveyor precision rectifier

Directory of Open Access Journals (Sweden)

Đukić Slobodan R.

2008-01-01

Full Text Available A circuit that provides precision rectification of small signal with low temperature sensitivity for frequencies up to 100 kHz without waveform distortion is presented. It utilizes an improved second type current conveyor based on current-steering output stage and biased silicon diodes. The use of a DC current source to bias the rectifying diodes provides higher temperature stability and lower DC offset level at the output. Proposed design of the precision rectifier ensures good current transfer linearity in the range that satisfy class A of the amplifier and good voltage transfer characteristic for low level signals. Distortion during the zero crossing of the input signal is practically eliminated. Design of the proposed rectifier is realized with standard components.

New analysis and design of a RF rectifier for RFID and implantable devices.

Science.gov (United States)

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from -15 dBm to -4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitable to passive UHF RFID tag IC and implantable devices.

Direct Driven Permanent Magnet Synchronous Generators with Diode Rectifiers for Use in Offshore Wind Turbines

OpenAIRE

Reigstad, Tor Inge

2007-01-01

This work is focused on direct-driven permanent magnets synchronous generators (PMSG) with diode rectifiers for use in offshore wind turbines. Reactive compensation of the generator, power losses and control of the generator are studied. Configurations for power transmission to onshore point of common connection are also considered. Costs, power losses, reliability and interface with the PMSG are discussed. The purpose of the laboratory tests and simulations are to learn how a PMSG with dio...

Performance improvement of three phase rectifier by employing electronic smoothing inductor

DEFF Research Database (Denmark)

Singh, Yash Veer; Rasmussen, Peter Omand; Andersen, Torben O.

2014-01-01

density of the rectifier. In case of an inverter connected to the output of the rectifier, peak to peak voltage ripples to the front end of the inverter reduces significantly by the ESI, and it increases lifetime of the capacitor connected to the dc link and reduces the voltage stress of the active power...... semiconductors of the inverter. In this paper, an average model of the ESI and its control schemes are presented....

A novel proposal of cooperation between a cage induction generator and the three-phase grid

Directory of Open Access Journals (Sweden)

Szular Zbigniew

2016-01-01

Full Text Available In the paper, a new concept of the cooperation between a cage induction generator and the three-phase grid is presented. The induction generator is excited by a capacitor battery connected to the stator winding terminals. In order to ensure a stable operation, the battery capacity should be continuously adjusted. Three appropriate selected capacitors are connected to the stator winding terminals by means of two bi-directional controlled switches. The generator output voltage is stabilized by a suitable control of these switches. The stator winding terminals are also connected to the diode bridge rectifier. Energy in the DC bus is converted to the parameters of the three-phase grid (400 V, 50 Hz by means of a three-phase voltage source inverter. Examples of numerical calculation results of the proposed energy generation system are presented in the end part of the paper.

Minimum component high frequency current mode rectifier | Sampe ...

African Journals Online (AJOL)

In this paper a current mode full wave rectifier circuit is proposed. The current mode rectifier circuit is implemented utilizing a floating current source (FCS) as an active element. The minimum component full wave rectifier utilizes only a single floating current source, two diodes and two grounded resistors. The extremely ...

RTD application in low power UHF rectifiers

International Nuclear Information System (INIS)

Sinyakin, V Yu; Makeev, M O; Meshkov, S A

2016-01-01

In the current work, the problem of UHF RFID passive tag sensitivity increase is considered. Tag sensitivity depends on HF signal rectifier efficiency and antenna-rectifier impedance matching. Possibility of RFID passive tag sensitivity increase up to 10 times by means of RTD use in HF signal rectifier in comparison with tags based on Schottky barrier diode is shown. (paper)

Comparative Evaluation of Three-Phase Isolated Matrix-Type PFC Rectifier Concepts for High Efficiency 380VDC Supplies of Future Telco and Data Centers

DEFF Research Database (Denmark)

Cortes, Patricio; Bortis, Dominik; Pittini, Riccardo

2014-01-01

rectifier and in many cases a mains transformer is used to provide galvanic isolation. In order to achieve a high efficiency in the DC voltage generation and to implement the required isolation, a single-stage concept, such as a matrix-type rectifier that enables PFC functionality and galvanic isolation...... in a single conversion, can be beneficial. In addition, due to the fact that with the matrix-type rectifier the galvanic isolation is performed with a high-frequency transformer, this results in a more compact rectifier system compared to conventional systems where the mains-frequency isolation transformer...... is located at the input of the PFC rectifier. In this paper, an overview of isolated matrix-type PFC rectifier topologies is given and a new converter circuit is proposed, analyzed and comparatively evaluated against another promising PFC rectifier concept, the phase-modular IMY-rectifier....

Chapter 13 - Active Rectifiers and Their Control

DEFF Research Database (Denmark)

Davari, Pooya; Zare, Firuz; Abdelhakim, Ahmed

2018-01-01

This chapter investigates the control design of active rectifiers and their applications in power electronics-based power system. The harmonic emission and measures are firstly addressed as a basis of evaluating the active rectifier's effectiveness. Furthermore, the importance of new coming...... standards is highlighted. Application-oriented design of active rectifiers as a main reason behind evolvement of different topologies is discussed. Then, the main principle in designing different control schemes in single-phase and three-phase rectifiers is investigated, analyzed, and experimentally...... verified. The influence of nonideal operating conditions with possible solutions is addressed. Finally, future prospective of active rectifiers as a one of the key enabler of carbon-free power system is summarized....

Advanced nonlinear control of three phase series active power filter

Directory of Open Access Journals (Sweden)

Abouelmahjoub Y.

2014-01-01

Full Text Available The problem of controlling three-phase series active power filter (TPSAPF is addressed in this paper in presence of the perturbations in the voltages of the electrical supply network. The control objective of the TPSAPF is twofold: (i compensation of all voltage perturbations (voltage harmonics, voltage unbalance and voltage sags, (ii regulation of the DC bus voltage of the inverter. A controller formed by two nonlinear regulators is designed, using the Backstepping technique, to provide the above compensation. The regulation of the DC bus voltage of the inverter is ensured by the use of a diode bridge rectifier which its output is in parallel with the DC bus capacitor. The Analysis of controller performances is illustrated by numerical simulation in Matlab/Simulink environment.

EMC Increasing of PWM Rectifier in Comparison with Classical Rectifier

Directory of Open Access Journals (Sweden)

R. Dolecek

2008-12-01

Full Text Available Pulse width modulated rectifier is a very popular topic nowadays. The modern industrial production demands continuous and lossless conversion of electrical energy parameters. This need leads to wide spread of power semiconductor converters. The rapid development in power electronics and microprocessor technology enables to apply sophisticated control methods that eliminate negative side effects of the power converters on the supply network. The phase controlled thyristor rectifiers overload the supply network with higher harmonics and reactive power consumption. That is why the PWM rectifier is being examined. In comparison with the phase controlled rectifier it can be controlled to consume nearly sinusoidal current with power factor equal to unity. Another advantage is its capability of energy recuperation. The PWM rectifier can assert itself for its good behavior in many applications, for example as an input rectifier in indirect frequency converter, or in traction. Traction vehicles equipped with PWM rectifier do not consume reactive power, do not load the supply network with higher harmonics, and the recuperation is possible. The paper deals with the PWM rectifier functional model realization and examination. Electromagnetic compatibility of PWM rectifier and classical phase controlled rectifier is compared on the basis of the input current harmonic analysis.

Comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier.

Science.gov (United States)

Tsai, Cheng-Tao; Su, Jye-Chau; Tseng, Sheng-Yu

2013-01-01

This paper presents comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier. In high current capability and high step-down voltage conversion, a phase-shift full-bridge converter with a conventional current-doubler rectifier has the common limitations of extremely low duty ratio and high component stresses. To overcome these limitations, a phase-shift full-bridge converter with a noncoupled current-doubler rectifier (NCDR) or a coupled current-doubler rectifier (CCDR) is, respectively, proposed and implemented. In this study, performance analysis and efficiency obtained from a 500 W phase-shift full-bridge converter with two improved current-doubler rectifiers are presented and compared. From their prototypes, experimental results have verified that the phase-shift full-bridge converter with NCDR has optimal duty ratio, lower component stresses, and output current ripple. In component count and efficiency comparison, CCDR has fewer components and higher efficiency at full load condition. For small size and high efficiency requirements, CCDR is relatively suitable for high step-down voltage and high efficiency applications.

Comparison between Phase-Shift Full-Bridge Converters with Noncoupled and Coupled Current-Doubler Rectifier

Directory of Open Access Journals (Sweden)

Cheng-Tao Tsai

2013-01-01

Full Text Available This paper presents comparison between phase-shift full-bridge converters with noncoupled and coupled current-doubler rectifier. In high current capability and high step-down voltage conversion, a phase-shift full-bridge converter with a conventional current-doubler rectifier has the common limitations of extremely low duty ratio and high component stresses. To overcome these limitations, a phase-shift full-bridge converter with a noncoupled current-doubler rectifier (NCDR or a coupled current-doubler rectifier (CCDR is, respectively, proposed and implemented. In this study, performance analysis and efficiency obtained from a 500 W phase-shift full-bridge converter with two improved current-doubler rectifiers are presented and compared. From their prototypes, experimental results have verified that the phase-shift full-bridge converter with NCDR has optimal duty ratio, lower component stresses, and output current ripple. In component count and efficiency comparison, CCDR has fewer components and higher efficiency at full load condition. For small size and high efficiency requirements, CCDR is relatively suitable for high step-down voltage and high efficiency applications.

Organic Diode Rectifiers Based on a High-Performance Conjugated Polymer for a Near-Field Energy-Harvesting Circuit.

Science.gov (United States)

Higgins, Stuart G; Agostinelli, Tiziano; Markham, Steve; Whiteman, Robert; Sirringhaus, Henning

2017-12-01

Organic diodes manufactured on a plastic substrate capable of rectifying a high-frequency radio-frequency identification signal (13.56 MHz), with sufficient power to operate an interactive smart tag, are reported. A high-performance conjugated semiconductor (an indacenodithiophene-benzothiadiazole copolymer) is combined with a carefully optimized architecture to satisfy the electrical requirements for an organic-semiconductor-based logic chip. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analysis and MPPT control of a wind-driven three-phase induction generator feeding single-phase utility grid

Directory of Open Access Journals (Sweden)

Krishnan Arthishri

2017-05-01

Full Text Available In this study, a three-phase diode bridge rectifier and a single-phase voltage source inverter topology has been proposed for feeding single-phase utility grid employing a three-phase induction generator fed from wind energy. A self-excited induction generator configuration has been chosen for wide speed operation of wind turbine system, which gives the scope for extracting maximum power available in the wind. In addition to maximum power point tracking (MPPT, the generator can be loaded to its rated capacity for feeding single-phase utility grid using a three-phase induction machine, whereas it is not possible with existing configurations because of the absence of power converters. For the proposed system, MPPT algorithm has been devised by continuously monitoring the grid current and a proportional resonant controller has been employed for grid synchronisation of voltage source inverter with single-phase grid. A MATLAB/Simulink model of the proposed system has been developed to ascertain its successful working by predetermining the overall performance characteristics. The present proposal has also been tested with sag, swell and distortion in the grid voltage. The control strategy has been implemented using field programmable gate array (FPGA controller with modularised programming approach. The efficacy of the system has been demonstrated with the results obtained from an experimental set-up in the laboratory.

Modelling a single phase voltage controlled rectifier using Laplace transforms

Science.gov (United States)

Kraft, L. Alan; Kankam, M. David

1992-01-01

The development of a 20 kHz, AC power system by NASA for large space projects has spurred a need to develop models for the equipment which will be used on these single phase systems. To date, models for the AC source (i.e., inverters) have been developed. It is the intent of this paper to develop a method to model the single phase voltage controlled rectifiers which will be attached to the AC power grid as an interface for connected loads. A modified version of EPRI's HARMFLO program is used as the shell for these models. The results obtained from the model developed in this paper are quite adequate for the analysis of problems such as voltage resonance. The unique technique presented in this paper uses the Laplace transforms to determine the harmonic content of the load current of the rectifier rather than a curve fitting technique. Laplace transforms yield the coefficient of the differential equations which model the line current to the rectifier directly.

Novel low harmonics 3-phase rectifiers for efficient motor systems; Novel low harmonics 3-phase rectifiers for efficient motor systems. Konzeptstudie - Schlussbericht

Energy Technology Data Exchange (ETDEWEB)

Pietkiewicz, A.; Melly, S.; Tucker, A.; Haeberle, N. [Schaffner EMV AG, Luterbach (Switzerland); Biner, H.-P. [Haute Ecole Specialisee de Suisse occidentale, HES-SO Valais, Sion (Switzerland)

2010-07-15

This final report for the Swiss Federal Office of Energy (SFOE) presents the results of a concept study made concerning novel low harmonics 3-phase rectifiers for efficient motor systems. The harmonic distortions which are produced by these systems are discussed and ways of minimising them are examined. The authors discuss novel, passive, multi-pulse current splitters that are considered to be cost efficient, compact and highly-reliable harmonics mitigation concepts for three-phase loads. According to the authors, functional prototypes for a nominal load of 4 kW proved, in laboratory tests, the outstanding properties of multi-pulse current splitters with respect to harmonics cancellation and robustness against voltage asymmetry. The design process, prototype construction and application tests are discussed, as are energy-saving potentials and marketing aspects.

Rectifiers

CERN Document Server

Visintini, R

2006-01-01

In particle accelerators, rectifiers are used to convert the AC voltage into DC or low-frequency AC to supply loads like magnets or klystrons. Some loads require high currents, others high voltages, and others both high current and high voltage. This presentation deals with the particular class of line commutated rectifiers (the switching techniques are treated elsewhere). The basic principles of rectification are presented. The effects of real world parameters are then taken into consideration. Some aspects related to the filtering of the harmonics both on the DC side and on the AC side are presented. Some protection issues associated with the use of thyristors and diodes are also treated. An example of power converter design, referring to a currently operating magnet power supply, is included. An extended bibliography (including some internet links) ends this presentation.

Design and implementation of predictive current control of three-phase PWM rectifier using space-vector modulation (SVM)

International Nuclear Information System (INIS)

Bouafia, Abdelouahab; Gaubert, Jean-Paul; Krim, Fateh

2010-01-01

This paper is concerned with the design and implementation of current control of three-phase PWM rectifier based on predictive control strategy. The proposed predictive current control technique operates with constant switching frequency, using space-vector modulation (SVM). The main goal of the designed current control scheme is to maintain the dc-bus voltage at the required level and to achieve the unity power factor (UPF) operation of the converter. For this purpose, two predictive current control algorithms, in the sense of deadbeat control, are developed for direct controlling input current vector of the converter in the stationary α-β and rotating d-q reference frame, respectively. For both predictive current control algorithms, at the beginning of each switching period, the required rectifier average voltage vector allowing the cancellation of both tracking errors of current vector components at the end of the switching period, is computed and applied during a predefined switching period by means of SVM. The main advantages of the proposed predictive current control are that no need to use hysteresis comparators or PI controllers in current control loops, and constant switching frequency. Finally, the developed predictive current control algorithms were tested both in simulations and experimentally, and illustrative results are presented here. Results have proven excellent performance in steady and transient states, and verify the validity of the proposed predictive current control which is compared to other control strategies.

High Voltage GaN Schottky Rectifiers

Energy Technology Data Exchange (ETDEWEB)

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

Science.gov (United States)

Duan, Xin; Chen, Xing; Zhou, Lin

2016-12-01

A novel metamaterial rectifying surface (MRS) for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

Directory of Open Access Journals (Sweden)

Xin Duan

2016-12-01

Full Text Available A novel metamaterial rectifying surface (MRS for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

Theoretical study on the rectifying performance of organoimido derivatives of hexamolybdates.

Science.gov (United States)

Wen, Shizheng; Yang, Guochun; Yan, Likai; Li, Haibin; Su, Zhongmin

2013-02-25

We design a new type of molecular diode, based on the organoimido derivatives of hexamolybdates, by exploring the rectifying performances using density functional theory combined with the non-equilibrium Green's function. Asymmetric current-voltage characteristics were obtained for the models with an unexpected large rectification ratio. The rectifying behavior can be understood by the asymmetrical shift of the transmission peak observed under different polarities. It is interesting to find that the preferred electron-transport direction in our studied system is different from that of the organic D-bridge-A system. The results show that the studied organic-inorganic hybrid systems have an intrinsically robust rectifying ratio, which should be taken into consideration in the design of the molecular diodes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Zero sequence blocking transformers for multi-pulse rectifier in aerospace applications

DEFF Research Database (Denmark)

Yao, Wenli; Blaabjerg, Frede; Zhang, Xiaobin

2014-01-01

The power electronics technology plays an even more important role in the aerospace applications of More Electric Aircrafts (MEA). AutoTransformer Rectifier Units (ATRU) have been widely adopted in aircrafts due to its simplicity and reliability. In this paper, Zero Sequence Blocking Transformers...... (ZSBT) are employed in the DC link to realize parallel rectifier bridges for ATRU, being the proposed 24-pulse rectifier. A star-connected autotransformer is used in this topology to divide the primary side voltage into four three-phase voltage groups, among which there is a phase shift of 15......°. The autotransformer then feeds the load through rectifier bridges, which are in parallel with ZSBTs. Compared to the traditional method that is using six interphase transformers to parallel the rectifier bridges; the proposed 24-pulse rectifier only requires four ZSBTs. This will contribute to a reduction of weight...

Common-mode Voltage Reduction in a Motor Drive System with a Power Factor Correction

DEFF Research Database (Denmark)

Adabi, J.; Boora, A.A.; Zare, F.

2012-01-01

Common-mode voltage generated by a power converter in combination with parasitic capacitive couplings is a potential source of shaft voltage in an AC motor drive system. In this study, a three-phase motor drive system supplied with a single-phase AC-DC diode rectifier is investigated in order...... to reduce shaft voltage in a three-phase AC motor drive system. In this topology, the AC-DC diode rectifier influences the common-mode voltage generated by the inverter because the placement of the neutral point is changing in different rectifier circuit states. A pulse width modulation technique...

Adaptive nonlinear control of single-phase to three-phase UPS system

Directory of Open Access Journals (Sweden)

Kissaoui M.

2014-01-01

Full Text Available This work deals with the problems of uninterruptible power supplies (UPS based on the single-phase to three-phase converters built in two stages: an input bridge rectifier and an output three phase inverter. The two blocks are joined by a continuous intermediate bus. The objective of control is threefold: i power factor correction “PFC”, ii generating a symmetrical three-phase system at the output even if the load is unknown, iii regulating the DC bus voltage. The synthesis of controllers has been reached by two nonlinear techniques that are the sliding mode and adaptive backstepping control. The performances of regulators have been validated by numerical simulation in MATLAB / SIMULINK.

Deliberately dispatched SCR firing angles for harmonic mitigation in three-phase multi-drive systems without communication

DEFF Research Database (Denmark)

Yang, Yongheng; Davari, Pooya; Zare, Firuz

2016-01-01

Adjustable Speed Drives (ASDs) are widely used in threephase multi-drive applications in industry, where low-cost Diode Rectifiers (DRs) or Silicon-Controlled Rectifiers (SCRs) are still employed as the front-ends in practice, also for simplicity. However, the associated harmonics are produced...

Wireless power transmission for biomedical implants: The role of near-zero threshold CMOS rectifiers.

Science.gov (United States)

Mohammadi, Ali; Redoute, Jean-Michel; Yuce, Mehmet R

2015-01-01

Biomedical implants require an electronic power conditioning circuitry to provide a stable electrical power supply. The efficiency of wireless power transmission is strongly dependent on the power conditioning circuitry specifically the rectifier. A cross-connected CMOS bridge rectifier is implemented to demonstrate the impact of thresholds of rectifiers on wireless power transfer. The performance of the proposed rectifier is experimentally compared with a conventional Schottky diode full wave rectifier over 9 cm distance of air and tissue medium between the transmitter and receiver. The output voltage generated by the CMOS rectifier across a 1 KΩ resistive load is around twice as much as the Schottky rectifier.

Operation of AC Adapters Visualized Using Light-Emitting Diodes

Science.gov (United States)

Regester, Jeffrey

2016-01-01

A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

High-performance digital triggering system for phase-controlled rectifiers

International Nuclear Information System (INIS)

Olsen, R.E.

1983-01-01

The larger power supplies used to power accelerator magnets are most commonly polyphase rectifiers using phase control. While this method is capable of handling impressive amounts of power, it suffers from one serious disadvantage, namely that of subharmonic ripple. Since the stability of the stored beam depends to a considerable extent on the regulation of the current in the bending magnets, subharmonic ripple, especially that of low frequency, can have a detrimental effect. At the NSLS, we have constructed a 12-pulse, phase control system using digital signal processing techniques that essentially eliminates subharmonic ripple

Graphene geometric diodes for terahertz rectennas

International Nuclear Information System (INIS)

Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

2013-01-01

We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

Investigation on a Novel Discontinuous Pulse-Width Modulation Algorithm for Single-phase Voltage Source Rectifier

DEFF Research Database (Denmark)

Qu, Hao; Yang, Xijun; Guo, Yougui

2014-01-01

Single-phase voltage source converter (VSC) is an important power electronic converter (PEC), including single-phase voltage source inverter (VSI), single-phase voltage source rectifier (VSR), single-phase active power filter (APF) and single-phase grid-connection inverter (GCI). Single-phase VSC...

A perturbation-based model for rectifier circuits

Directory of Open Access Journals (Sweden)

Vipin B. Vats

2006-01-01

Full Text Available A perturbation-theoretic analysis of rectifier circuits is presented. The governing differential equation of the half-wave rectifier with capacitor filter is analyzed by expanding the output voltage as a Taylor series with respect to an artificially introduced parameter in the nonlinearity of the diode characteristic as is done in quantum theory. The perturbation parameter introduced in the analysis is independent of the circuit components as compared to the method presented by multiple scales. The various terms appearing in the perturbation series are then modeled in the form of an equivalent circuit. This model is subsequently used in the analysis of full-wave rectifier. Matlab simulation results are included which confirm the validity of the theoretical formulations. Perturbation analysis acts a helpful tool in analyzing time-varying systems and chaotic systems.

Structural Optimization of Non-Newtonian Rectifiers

DEFF Research Database (Denmark)

Jensen, Kristian Ejlebjærg; Okkels, Fridolin

When the size of fluidic devices is scaled down, inertial effects start to vanish such that the governing equation becomes linear. Some microfluidic devices rely on the non-linear term related to the inertia of the fluid, and one example is fluid rectifiers (diodes) e.g. related to some micropumps....... These rectifiers rely on the device geometry for their working mechanism, but on further downscaling the inertial effect vanishes and the governing equation starts to show symmetry properties. These symmetry properties reduce the geometry influence to the point where fluid rectifiers cease to function....... In this context it is natural to look for other sources of non-linearity and one possibility is to introduce a non-Newtonian working fluid. Non-Newtonian properties are due to stretching of large particles/molecules in the fluid and this is commonly seen for biological samples in “lab-on-a-chip” systems...

Vector control of three-phase AC/DC front-end converter

Indian Academy of Sciences (India)

Section 4 presents the simulation and experimental results of FEC. Section 5 discusses the problems associated with the starting process of ..... A 250-kVA vector-controlled FEC is simulated with MATLAB/SIMULINK. ..... Ghosh R 2007 Modelling, Analysis and Control of Single-phase and Three-phase PWM Rectifiers.

Feedback loop compensates for rectifier nonlinearity

Science.gov (United States)

1966-01-01

Signal processing circuit with two negative feedback loops rectifies two sinusoidal signals which are 180 degrees out of phase and produces a single full-wave rectified output signal. Each feedback loop incorporates a feedback rectifier to compensate for the nonlinearity of the circuit.

60Co γ-irradiation effects on electrical properties of a rectifying diode based on a novel macrocyclic Zn octaamide complex

International Nuclear Information System (INIS)

Ocak, Y.S.; Kilicoglu, T.; Topal, G.; Baskan, M.H.

2010-01-01

C 36 H 28 N 12 O 8 ZnCl 2 .9/2H 2 O, Zn-octaamide (ZnOA) macrocyclic compound was synthesized to be used in the fabrication of electronic and photoelectronic devices. The structure of new compound was identified by using 1 H NMR, 13 C NMR, IR, UV-vis and LC-MS spectroscopic methods. The Sn/ZnOA/n-Si/Au structure was engineered by forming a thin macrocyclic organic compound layer on n-Si inorganic substrate and then by evaporating Sn metal on the organic layer. It was seen that the device had a good rectifying behaviour and showed Schottky diode properties. The diode was irradiated under 60 Co γ-source at room temperature. Characteristic parameters of the diode were determined from its current-voltage (I-V) and capacitance voltage (C-V) measurements before and after irradiation. It was observed that γ-irradiation had clear effects on I-V and C-V properties. Also, it was seen that the barrier height, the ideality factor and the series resistance values decreased after the applied radiation, while the saturation current value increased.

LCCT-derived three-level three-phase inverters

DEFF Research Database (Denmark)

Shults, Tatiana; Husev, Oleksandr; Blaabjerg, Frede

2017-01-01

Solutions for a family of the novel three-level neutral-point-clamped (NPC) inductor-capacitor-capacitor-transformer (LCCT)-derived three-phase inverters are described and compared. Component design guidelines and steady state analysis, current and voltage waveforms are given. The authors......' simulation results confirm the theoretical predictions. It was found that an asymmetrical three-level NPC LCCT-derived inverter with a single diode in the impedance source network is the most promising solution. Experimental results for an asymmetrical three-level NPC LCCT-derived inverter with a single...

Towards Rectifying Performance at the Molecular Scale.

Science.gov (United States)

Zhang, Guang-Ping; Xie, Zhen; Song, Yang; Hu, Gui-Chao; Wang, Chuan-Kui

2017-10-24

Molecular diode, proposed by Mark Ratner and Arieh Aviram in 1974, is the first single-molecule device investigated in molecular electronics. As a fundamental device in an electric circuit, molecular diode has attracted an enduring and extensive focus during the past decades. In this review, the theoretical and experimental progresses of both charge-based and spin-based molecular diodes are summarized. For the charge-based molecular diodes, the rectifying properties originated from asymmetric molecules including D-σ-A, D-π-A, D-A, and σ-π type compounds, asymmetric electrodes, asymmetric nanoribbons, and their combination are analyzed. Correspondingly, the rectification mechanisms are discussed in detail. Furthermore, a series of strategies for modulating rectification performance is figured out. Discussion on concept of molecular spin diode is also involved based on a magnetic co-oligomer. At the same time, the intrinsic mechanism as well as the modulation of the spin-current rectification performance is introduced. Finally, several crucial issues that need to be addressed in the future are given.

Biradical and triradical organic magnetic molecules as spin filters and rectifiers

International Nuclear Information System (INIS)

Zhu, L.; Yao, K.L.; Liu, Z.L.

2012-01-01

Graphical abstract: (a) Negative differential resistance (NDR) characteristic and antiparallel spin-current (ASC) rectification; (b) spin-current (SC) rectification and charge-current (CC) rectification properties Display Omitted Highlights: ► Organic magnetic molecules at gold electrodes as spin/charge rectifier. ► Spin diode/rectification stems from length and asymmetry of molecular framework. ► Negative differential resistance, spin-filtering and switching evidenced. - Abstract: We have theoretically investigated the spin-polarized transport properties of molecular junctions consisting of biradical and triradical organic magnetic molecules sandwiched between two symmetric gold electrodes, respectively. It shows that these junctions function as a spin rectifier or a combination of spin and charge rectifiers with high spin rectification ratios exceeding 100, wherein the spin diode/rectification effect stems from the conjugated length and asymmetry of the molecular framework, which is the pre-requisite for electronic asymmetry of the adsorbed species. The negative differential resistance, spin-filtering and switching properties are also unveiled. In particular, it is revealed that the strong couplings between the electrodes and molecules are responsible for the negative differential resistance.

Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

Science.gov (United States)

Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal

2018-03-01

Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Zeng, Jian-Jhou; Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw

2014-05-01

The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances.

Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

International Nuclear Information System (INIS)

Zeng, Jian-Jhou; Lin, Yow-Jon

2014-01-01

The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances

Three Level Diode Clamped Inverter Fed Induction Motor with Dtc-Svm

OpenAIRE

V. Ranjith Kumar

2013-01-01

This project presents a three-level diode-clamped inverter feeding an asynchronous motor drive with direct torque control (DTC). The control method is based on DTC operating principles. The stator voltage vector reference is computed from the stator flux and torque errors imposed by the flux and torque controllers. This voltage reference is then generated using a diode-clamped inverter, where each phase of the inverter can be implemented using a dc source, which would be available from fuel c...

A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

Energy Technology Data Exchange (ETDEWEB)

Wang, Ruxi [Virginia Polytechnic Institute and State University (Virginia Tech); Wang, Fei [ORNL; Boroyevich, Dushan [Virginia Polytechnic Institute and State University (Virginia Tech); Burgos, Rolando [ABB; Lai, Rixin [General Electric; Ning, Puqi [ORNL; Rajashekara, Kaushik [Rolls Royce

2011-01-01

It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency harmonic current is normally filtered using a bulk capacitor in the bus, which results in low power density. However, pursuing high power density in converter design is a very important goal in the aerospace applications. This paper studies methods for reducing the energy storage capacitor for single-phase rectifiers. The minimum ripple energy storage requirement is derived independently of a specific topology. Based on theminimum ripple energy requirement, the feasibility of the active capacitor s reduction schemes is verified. Then, we propose a bidirectional buck boost converter as the ripple energy storage circuit, which can effectively reduce the energy storage capacitance. The analysis and design are validated by simulation and experimental results.

Current and Voltage Conveyors in Current- and Voltage-Mode Precision Full-Wave Rectifiers

Directory of Open Access Journals (Sweden)

J. Koton

2011-04-01

Full Text Available In this paper new versatile precision full-wave rectifiers using current and/or voltage conveyors as active elements and two diodes are presented. The performance of these circuit solutions is analysed and compared to the opamp based precision rectifier. To analyze the behavior of the functional blocks, the frequency dependent RMS error and DC transient value are evaluated for different values of input voltage amplitudes. Furthermore, experimental results are given that show the feasibilities of the conveyor based rectifiers superior to the corresponding operational amplifier based topology.

A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

Science.gov (United States)

Yan Lu; Wing-Hung Ki

2014-06-01

A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

Three-Level AC-DC-AC Z-Source Converter Using Reduced Passive Component Count

DEFF Research Database (Denmark)

Loh, Poh Chiang; Gao, Feng; Tan, Pee-Chin

2009-01-01

This paper presents a three-level ac-dc-ac Z-source converter with output voltage buck-boost capability. The converter is implemented by connecting a low-cost front-end diode rectifier to a neutral-point-clamped inverter through a single X-shaped LC impedance network. The inverter is controlled...... to switch with a three-level output voltage, where the middle neutral potential is uniquely tapped from the star-point of a wye-connected capacitive filter placed before the front-end diode rectifier for input current filtering. Through careful control, the resulting converter can produce the correct volt...

Harmonic Emissions of Three-Phase Diode Rectifiers in Distribution Networks

DEFF Research Database (Denmark)

Zare, Firuz; Soltani, Hamid; Kumar, Dinesh

2017-01-01

Harmonic emissions have been changed in distribution networks, with respect to frequency range and magnitude, due to the penetration of modern power electronics systems. Two new frequency ranges: 2–9 kHz and 9–150 kHz have been identified as new disturbing frequency ranges affecting distribution ...

Nano Antenna Integrated Diode (Rectenna) For Infrared Energy Harvesting

KAUST Repository

Gadalla, Mena N.

2013-01-01

40% without it) which in turn improves the coupled power by 40 times. Nano antennas were fabricated in house using Electron beam lithography with a precise gap of 50nm. In addition, THz diode was designed, fabricated and integrated to the nano antennas to rectify the enhanced THz signal. The integration of the nano diode required a precise overlap of the two arms of the antenna in the rage of 100nm. In order to overcome two arms overlap fabrication challenges, three layer alignment technique was used to produce precise overlap.The THz rectifier was electrically tested and shown high sensitivity and rectification ability without any bias. Finally, nano antenna integrated diode is under optical testing using   a   10.6μm   𝐶𝑜2 laser at Electro-Optics Lab, Prince Sultan Advanced Technologies Research Institute (PSATRI), King Saud University due to the unavailability of the measurement setup in KAUST.

SPS rectifier stations

CERN Multimedia

CERN PhotoLab

1974-01-01

The first of the twelves SPS rectifier stations for the bending magnets arrived at CERN at the end of the year. The photograph shows a station with the rectifiers on the left and in the other three cubicles the chokes, capacitors and resistor of the passive filter.

Design and implementation of high performance direct power control of three-phase PWM rectifier, via fuzzy and PI controller for output voltage regulation

International Nuclear Information System (INIS)

Bouafia, Abdelouahab; Krim, Fateh; Gaubert, Jean-Paul

2009-01-01

This paper proposes direct power control (DPC) for three-phase PWM rectifiers using a new switching table, without line voltage sensors. The instantaneous active and reactive powers, directly controlled by selecting the optimum state of the converter, are used as the PWM control variables instead of the phase line currents being used. The main goal of the control system is to maintain the dc-bus voltage at the required level, while input currents drawn from the power supply should be sinusoidal and in phase with respective phase voltages to satisfy the unity power factor (UPF) operation. Conventional PI and a designed fuzzy logic-based controller, in the dc-bus voltage control loop, have been used to provide active power command. A dSPACE based experimental system was developed to verify the validity of the proposed DPC. The steady-state, and dynamic results illustrating the operation and performance of the proposed control scheme are presented. As a result, it was confirmed that the novel DPC is much better than the classical one. Line currents very close to sinusoidal waveforms (THD < 2%) and good regulation of dc-bus voltage are achieved using PI or fuzzy controller. Moreover, fuzzy logic controller gives excellent performance in transient state, a good rejection of impact load disturbance, and a good robustness

Biradical and triradical organic magnetic molecules as spin filters and rectifiers

Energy Technology Data Exchange (ETDEWEB)

Zhu, L. [School of Physics, School of Optoelectronics Science and Engineering, Wuhan Pulsed Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Yao, K.L., E-mail: klyao@hust.edu.cn [School of Physics, School of Optoelectronics Science and Engineering, Wuhan Pulsed Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); International Center of Materials Physics, Chinese Academy of Science, Shengyang 110015 (China); Liu, Z.L. [School of Physics, School of Optoelectronics Science and Engineering, Wuhan Pulsed Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

2012-03-13

Graphical abstract: (a) Negative differential resistance (NDR) characteristic and antiparallel spin-current (ASC) rectification; (b) spin-current (SC) rectification and charge-current (CC) rectification properties Display Omitted Highlights: Black-Right-Pointing-Pointer Organic magnetic molecules at gold electrodes as spin/charge rectifier. Black-Right-Pointing-Pointer Spin diode/rectification stems from length and asymmetry of molecular framework. Black-Right-Pointing-Pointer Negative differential resistance, spin-filtering and switching evidenced. - Abstract: We have theoretically investigated the spin-polarized transport properties of molecular junctions consisting of biradical and triradical organic magnetic molecules sandwiched between two symmetric gold electrodes, respectively. It shows that these junctions function as a spin rectifier or a combination of spin and charge rectifiers with high spin rectification ratios exceeding 100, wherein the spin diode/rectification effect stems from the conjugated length and asymmetry of the molecular framework, which is the pre-requisite for electronic asymmetry of the adsorbed species. The negative differential resistance, spin-filtering and switching properties are also unveiled. In particular, it is revealed that the strong couplings between the electrodes and molecules are responsible for the negative differential resistance.

Phase-rectified signal averaging method to predict perinatal outcome in infants with very preterm fetal growth restriction- a secondary analysis of TRUFFLE-trial

NARCIS (Netherlands)

Lobmaier, Silvia M.; Mensing van Charante, Nico; Ferrazzi, Enrico; Giussani, Dino A.; Shaw, Caroline J.; Müller, Alexander; Ortiz, Javier U.; Ostermayer, Eva; Haller, Bernhard; Prefumo, Federico; Frusca, Tiziana; Hecher, Kurt; Arabin, Birgit; Thilaganathan, Baskaran; Papageorghiou, Aris T.; Bhide, Amarnath; Martinelli, Pasquale; Duvekot, Johannes J.; van Eyck, Jim; Visser, Gerard H A; Schmidt, Georg; Ganzevoort, Wessel; Lees, Christoph C.; Schneider, Karl T M; Bilardo, Caterina M.; Brezinka, Christoph; Diemert, Anke; Derks, Jan B.; Schlembach, Dietmar; Todros, Tullia; Valcamonico, Adriana; Marlow, Neil; van Wassenaer-Leemhuis, Aleid

2016-01-01

Background Phase-rectified signal averaging, an innovative signal processing technique, can be used to investigate quasi-periodic oscillations in noisy, nonstationary signals that are obtained from fetal heart rate. Phase-rectified signal averaging is currently the best method to predict survival

Phase-rectified signal averaging method to predict perinatal outcome in infants with very preterm fetal growth restriction- a secondary analysis of TRUFFLE-trial

NARCIS (Netherlands)

Lobmaier, Silvia M.; Mensing van Charante, Nico; Ferrazzi, Enrico; Giussani, Dino A.; Shaw, Caroline J.; Müller, Alexander; Ortiz, Javier U.; Ostermayer, Eva; Haller, Bernhard; Prefumo, Federico; Frusca, Tiziana; Hecher, Kurt; Arabin, Birgit; Thilaganathan, Baskaran; Papageorghiou, Aris T.; Bhide, Amarnath; Martinelli, Pasquale; Duvekot, Johannes J.; van Eyck, Jim; Visser, Gerard H. A.; Schmidt, Georg; Ganzevoort, Wessel; Lees, Christoph C.; Schneider, Karl T. M.; Bilardo, Caterina M.; Brezinka, Christoph; Diemert, Anke; Derks, Jan B.; Schlembach, Dietmar; Todros, Tullia; Valcamonico, Adriana; Marlow, Neil; van Wassenaer-Leemhuis, Aleid

2016-01-01

Phase-rectified signal averaging, an innovative signal processing technique, can be used to investigate quasi-periodic oscillations in noisy, nonstationary signals that are obtained from fetal heart rate. Phase-rectified signal averaging is currently the best method to predict survival after

28.3THz bowtie antenna integrated rectifier for infrared energy harvesting

KAUST Repository

Gadalla, Mena N.; Shamim, Atif

2014-01-01

The design, fabrication and characterization of an asymmetric 28.3 THz antenna integrated rectifier (rectenna) using Au/Al2O3/Pt is presented. The rectenna design comprises a sharp tip bowtie antenna and a tunneling Metal-insulator-Metal (MIM) diode

Universal Voltage Conveyor and Current Conveyor in Fast Full-Wave Rectifier

Directory of Open Access Journals (Sweden)

Josef Burian

2012-12-01

Full Text Available This paper deals about the design of a fast voltage-mode full-wave rectifier, where universal voltage conveyor and second-generation current conveyor are used as active elements. Thanks to the active elements, the input and output impedance of the non-linear circuit is infinitely high respectively zero in theory. For the rectification only two diodes and three resistors are required as passive elements. The performance of the circuit is shown on experimental measurement results showing the dynamic range, time response, frequency dependent DC transient value and RMS error for different values of input voltage amplitudes.

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

Science.gov (United States)

Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

2016-05-01

Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

International Nuclear Information System (INIS)

He, Guan-Ru; Lin, Yow-Jon; Chang, Hsing-Cheng; Chen, Ya-Hui

2012-01-01

The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H 2 O 2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H 2 O 2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSi x O y layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H 2 O 2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiO x layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation. - Highlights: ► The electrical properties of n-ZnO/p-Si heterojunction diodes were researched. ► The n-ZnO/p-Si diode without H 2 O 2 treatment showed a poor rectifying behavior. ► The n-ZnO/H 2 O 2 -treated p-Si diode showed a good rectifying behavior. ► The enhanced responsivity can be interpreted by the device rectifying performance.

Harmonic Distortion Performance of Multi Three-Phase SCR-Fed Drive Systems with Controlled DC-Link Current under Unbalanced Grid

DEFF Research Database (Denmark)

Soltani, Hamid; Davari, Pooya; Blaabjerg, Frede

2017-01-01

. In this paper, the main aim is to analyze the effects of the grid unbalanced voltage on the multi-unit three-phase ASDs with the Silicon-Controlled Rectifier (SCR)-fed front-end rectifiers, where the DC-link current is controlled utilizing an Electronic Inductor (EI) technique. In this respect, the main...

DC Motor Drive with PFC Rectifier

Directory of Open Access Journals (Sweden)

Lascu Mihaela

2008-05-01

Full Text Available The goal of this work is to study theperformances of a hybrid controller used to controlDC Motor drive with a single-phase power factorcorrection rectifier. This study is made usingcomputer simulation (Simulink. The first part isdevoted to the control system of the DC Motors. Inthe second part, the design of the hybrid controllerwill be presented. The third part is the design ofthe fast response single-phase boost power factorcorrection rectifier. The last parts are devoted tosimulation and experimental results.

A DC-Link Modulation Scheme with Phase-Shifted Current Control for Harmonic Cancellations in Multidrive Applications

DEFF Research Database (Denmark)

Yang, Yongheng; Davari, Pooya; Zare, Firuz

2016-01-01

of a new DC link modulation scheme with a phase-shifted current control enabled by the SCR. The DC-link current modulation scheme is implemented by adding and subtracting specific modulation levels, which makes the total currents drawn from the grid “multi-level”, resulting in an improved current quality......This letter proposes a harmonic mitigation strategy to cancel out current harmonics induced by the front-end rectifiers in multi-drive systems, which consist of diode rectifiers, Silicon-Controlled Rectifiers (SCR), and boost converters in the DC-link. The proposed strategy is a combination...

Analysis of an inverter-supplied multi-winding transformer with a full-wave rectifier at the output

International Nuclear Information System (INIS)

Klopcic, Beno; Dolinar, Drago; Stumberger, Gorazd

2008-01-01

This paper deals with the magnetic analysis of an inverter-supplied multi-winding transformer frequently used in resistance spot welding applications. The basic structure of the analyzed system consists of an inverter, a single-phase transformer with two secondary windings and a full-wave rectifier mounted at the output of the transformer, which assure a very short rise time of the welding current. The disturbing current spikes often appear in the transformer's primary in the steady-state operation, which can activate the over-current protection switch-off of the system. The results of numerical analysis performed on the nonlinear model of the discussed system have shown that very strong magnetic saturation of the transformer's iron core, caused by the interaction among the different ohmic resistances of secondary windings and different characteristics of the output rectifier diodes, provokes unwanted current spikes. Magnetic saturation could be efficiently eliminated using very simple passive method proposed in this paper. All findings are confirmed by systematic analysis numerically and experimentally

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Energy Technology Data Exchange (ETDEWEB)

Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2014-02-03

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

Status report of the three phase 25 kA, 1.5 kW thermally switched superconducting rectifier, transformer and switches

NARCIS (Netherlands)

ten Kate, Herman H.J.; Holtslag, A.H.M.; Knoben, J.; Steffens, H.A.; van de Klundert, L.J.M.

1983-01-01

A 25 kA, 1.5 kW superconducting rectifier system has been developed. This rectifier system working like an a.c.-d.c, converter with a primary current of 35 A at 0.1Hz, will energize a 25 kA coil with an average power of 5.4 MJ/hr and a proposed energy efficiency of at least 96%. Such a highly

Direct-current vector control of three-phase grid-connected rectifier-inverter

Energy Technology Data Exchange (ETDEWEB)

Li, Shuhui; Haskew, Timothy A.; Hong, Yang-Ki; Xu, Ling [Department of Electrical and Computer Engineering, University of Alabama, Tuscaloosa, AL 35475 (United States)

2011-02-15

The three-phase grid-connected converter is widely used in renewable and electric power system applications. Traditionally, control of the three-phase grid-connected converter is based on the standard decoupled d-q vector control mechanism. Nevertheless, the study of this paper shows that there is a limitation in the conventional standard vector control method. Some of the limitations have also been found recently by other researchers. To overcome the shortage of the conventional vector control technique, this paper proposes a new direct-current d-q vector control mechanism in a nested-loop control structure, based on which an optimal control strategy is developed in a nonlinear programming formulation. The behaviors of both the conventional and proposed control methods are compared and evaluated in simulation and laboratory hardware experiment environments, both of which demonstrates that the proposed approach is effective for grid-connected power converter control in a wide system conditions while the conventional standard vector control approach may behave improperly especially when the converter operates beyond its PWM saturation limit. (author)

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

International Nuclear Information System (INIS)

Di Bartolomeo, Antonio

2016-01-01

In the past decade graphene has been one of the most studied materials for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the existing semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.

A self-powered piezoelectric energy harvesting interface circuit with efficiency-enhanced P-SSHI rectifier

Science.gov (United States)

Liu, Lianxi; Pang, Yanbo; Yuan, Wenzhi; Zhu, Zhangming; Yang, Yintang

2018-04-01

The key to self-powered technique is initiative to harvest energy from the surrounding environment. Harvesting energy from an ambient vibration source utilizing piezoelectrics emerged as a popular method. Efficient interface circuits become the main limitations of existing energy harvesting techniques. In this paper, an interface circuit for piezoelectric energy harvesting is presented. An active full bridge rectifier is adopted to improve the power efficiency by reducing the conduction loss on the rectifying path. A parallel synchronized switch harvesting on inductor (P-SSHI) technique is used to improve the power extraction capability from piezoelectric harvester, thereby trying to reach the theoretical maximum output power. An intermittent power management unit (IPMU) and an output capacitor-less low drop regulator (LDO) are also introduced. Active diodes (AD) instead of traditional passive ones are used to reduce the voltage loss over the rectifier, which results in a good power efficiency. The IPMU with hysteresis comparator ensures the interface circuit has a large transient output power by limiting the output voltage ranges from 2.2 to 2 V. The design is fabricated in a SMIC 0.18 μm CMOS technology. Simulation results show that the flipping efficiency of the P-SSHI circuit is over 80% with an off-chip inductor value of 820 μH. The output power the proposed rectifier can obtain is 44.4 μW, which is 6.7× improvement compared to the maximum output power of a traditional rectifier. Both the active diodes and the P-SSHI help to improve the output power of the proposed rectifier. LDO outputs a voltage of 1.8 V with the maximum 90% power efficiency. The proposed P-SSHI rectifier interface circuit can be self-powered without the need for additional power supply. Project supported by the National Natural Science Foundation of China (Nos. 61574103, U1709218) and the Key Research and Development Program of Shaanxi Province (No. 2017ZDXM-GY-006).

Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

KAUST Repository

Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

2017-01-01

For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

KAUST Repository

Khan, A.A.

2017-07-27

For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

Unidirectional oxide hetero-interface thin-film diode

International Nuclear Information System (INIS)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

2015-01-01

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

Modeling of SVM Diode Clamping Three-Level Inverter Connected to Grid

DEFF Research Database (Denmark)

Guo, Yougui; Zeng, Ping; Zhu, Jieqiong

2011-01-01

PLECS is used to model the diode clamping three-level inverter connected to grid and good results are obtained. First the output voltage SVM is described for diode clamping three-level inverter with loads connected to Y. Then the output voltage SVM of diode clamping three-level inverter is simply...... analyzed with loads connected to △. But it will be further researched in the future. Third, PLECS is briefly introduced. Fourth, the modeling of diode clamping three-level inverter is briefly presented with PLECS. Finally, a series of simulations are carried out. The simulation results tell us PLECS...... is very powerful tool to real power circuits and it is very easy to simulate them. They have also verified that SVM control strategy is feasible to control the diode clamping three-level inverter....

Length dependence of rectification in organic co-oligomer spin rectifiers

International Nuclear Information System (INIS)

Hu Gui-Chao; Zhang Zhao; Li Ying; Ren Jun-Feng; Wang Chuan-Kui

2016-01-01

The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio: for a short molecular diode, the charge-current rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length. (paper)

High-temperature current conduction through three kinds of Schottky diodes

International Nuclear Information System (INIS)

Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

2009-01-01

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Optical phase dynamics in mutually coupled diode laser systems exhibiting power synchronization

International Nuclear Information System (INIS)

Pal, Vishwa; Ghosh, R; Prasad, Awadhesh

2011-01-01

We probe the physical mechanism behind the known phenomenon of power synchronization of two diode lasers that are mutually coupled via their delayed optical fields. In a diode laser, the amplitude and the phase of the optical field are coupled by the so-called linewidth enhancement factor, α. In this work, we explore the role of optical phases of the electric fields in amplitude (and hence power) synchronization through α in such mutually delay-coupled diode laser systems. Our numerical results show that the synchronization of optical phases drives the powers of lasers to synchronized death regimes. We also find that as α varies for different diode lasers, the system goes through a sequence of in-phase amplitude-death states. Within the windows between successive amplitude-death regions, the cross-correlation between the field amplitudes exhibits a universal power-law behaviour with respect to α.

Single-Phase Full-Wave Rectifier as an Effective Example to Teach Normalization, Conduction Modes, and Circuit Analysis Methods

Directory of Open Access Journals (Sweden)

Predrag Pejovic

2013-12-01

Full Text Available Application of a single phase rectifier as an example in teaching circuit modeling, normalization, operating modes of nonlinear circuits, and circuit analysis methods is proposed.The rectifier supplied from a voltage source by an inductive impedance is analyzed in the discontinuous as well as in the continuous conduction mode. Completely analytical solution for the continuous conduction mode is derived. Appropriate numerical methods are proposed to obtain the circuit waveforms in both of the operating modes, and to compute the performance parameters. Source code of the program that performs such computation is provided.

UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

Science.gov (United States)

Sahatiya, Parikshit; Badhulika, Sushmee

2016-07-01

Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current-voltage characteristic similar to that of conventional semiconductor p-n junction diodes. Excellent rectifying behavior with a rectification ratio of ~103 was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.

Dual Phase Change Thermal Diodes for Enhanced Rectification Ratios: Theory and Experiment

KAUST Repository

Cottrill, Anton L.; Wang, Song; Liu, Albert Tianxiang; Wang, Wen-Jun; Strano, Michael S.

2018-01-01

Thermal diodes are materials that allow for the preferential directional transport of heat and are highly promising devices for energy conservation, energy harvesting, and information processing applications. One form of a thermal diode consists of the junction between a phase change and phase invariant material, with rectification ratios that scale with the square root of the ratio of thermal conductivities of the two phases. In this work, the authors introduce and analyse the concept of a Dual Phase Change Thermal Diode (DPCTD) as the junction of two phase change materials with similar phase boundary temperatures but opposite temperature coefficients of thermal conductivity. Such systems possess a significantly enhanced optimal scaling of the rectification ratio as the square root of the product of the thermal conductivity ratios. Furthermore, the authors experimentally design and fabricate an ambient DPCTD enabled by the junction of an octadecane-impregnated polystyrene foam, polymerized using a high internal phase emulsion template (PFH-O) and a poly(N-isopropylacrylamide) (PNIPAM) aqueous solution. The DPCTD shows a significantly enhanced thermal rectification ratio both experimentally (2.6) and theoretically (2.6) as compared with ideal thermal diodes composed only of the constituent materials.

Dual Phase Change Thermal Diodes for Enhanced Rectification Ratios: Theory and Experiment

KAUST Repository

Cottrill, Anton L.

2018-01-15

Thermal diodes are materials that allow for the preferential directional transport of heat and are highly promising devices for energy conservation, energy harvesting, and information processing applications. One form of a thermal diode consists of the junction between a phase change and phase invariant material, with rectification ratios that scale with the square root of the ratio of thermal conductivities of the two phases. In this work, the authors introduce and analyse the concept of a Dual Phase Change Thermal Diode (DPCTD) as the junction of two phase change materials with similar phase boundary temperatures but opposite temperature coefficients of thermal conductivity. Such systems possess a significantly enhanced optimal scaling of the rectification ratio as the square root of the product of the thermal conductivity ratios. Furthermore, the authors experimentally design and fabricate an ambient DPCTD enabled by the junction of an octadecane-impregnated polystyrene foam, polymerized using a high internal phase emulsion template (PFH-O) and a poly(N-isopropylacrylamide) (PNIPAM) aqueous solution. The DPCTD shows a significantly enhanced thermal rectification ratio both experimentally (2.6) and theoretically (2.6) as compared with ideal thermal diodes composed only of the constituent materials.

Effects of DC-link Filter on Harmonic and Interharmonic Generation in Three-phase Adjustable Speed Drive Systems

DEFF Research Database (Denmark)

Soltani, Hamid; Davari, Pooya; Kumar, Dinesh

2017-01-01

Harmonic and interharmonic distortions are considered as the main power quality issues especially in the distribution networks. The double-stage Adjustable Speed Drives (ASDs) in which the front-end diode rectifier is connected to a rear-end inverter through an intermediate DC-link filter may inj...

Three-phase electric drive with modified electronic smoothing inductor

DEFF Research Database (Denmark)

Singh, Yash Veer; Rasmussen, Peter Omand; Andersen, Torben Ole

2010-01-01

This paper presents a three-phase electric drive with a modified electronic smoothing inductor (MESI) having reduced size of passive components. The classical electronic smoothing inductor (ESI) is able to control a diode bridge output current and also reduce not only mains current harmonics...

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

Directory of Open Access Journals (Sweden)

Wen-Chung Chang

2016-06-01

Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

Novel, Four-Switch, Z-Source Three-Phase Inverter

DEFF Research Database (Denmark)

Antal, Robert; Muntean, Nicolae; Boldea, Ion

2010-01-01

This paper presents a new z-source three phase inverter topology. The proposed topology combines the advantages of a traditional four-switch three-phase inverter with the advantages of the z impedance network (one front-end diode, two inductors and two X connected capacitors). This new topology......, besides the self-boost property, has low switch count and it can operate as a buck-boost inverter. In contrast to standard four-switch three-phase inverter which operates at half dc input voltage the proposed four-switch z-source inverter, by self boosting, brings the output voltage at same (or higher......) value as in six switch standard three-phase inverter. The article presents the derivation of the equations describing the operation of the converter based on space vector analysis, validation through digital simulations in PSIM and preliminary experimental results on a laboratory setup with a dsPIC30F...

High flux diode packaging using passive microscale liquid-vapor phase change

Science.gov (United States)

Bandhauer, Todd; Deri, Robert J.; Elmer, John W.; Kotovsky, Jack; Patra, Susant

2017-09-19

A laser diode package includes a heat pipe having a fluid chamber enclosed in part by a heat exchange wall for containing a fluid. Wicking channels in the fluid chamber is adapted to wick a liquid phase of the fluid from a condensing section of the heat pipe to an evaporating section of the heat exchanger, and a laser diode is connected to the heat exchange wall at the evaporating section of the heat exchanger so that heat produced by the laser diode is removed isothermally from the evaporating section to the condensing section by a liquid-to-vapor phase change of the fluid.

A Modular Active Front-End Rectifier with Electronic Phase-Shifting for Harmonic Mitigation in Motor Drive Applications

DEFF Research Database (Denmark)

Zare, Firuz; Davari, Pooya; Blaabjerg, Frede

2017-01-01

In this paper, an electronic phase-shifting strategy has been optimized for a multi-parallel configuration of line-commutated rectifiers with a common dc-bus voltage used in motor drive application. This feature makes the performance of the system independent of the load profile and maximizes its...

Load-Independent Harmonic Mitigation in SCR-Fed Three-Phase Multiple Adjustable Speed Drive Systems with Deliberately Dispatched Firing Angles

DEFF Research Database (Denmark)

Yang, Yongheng; Davari, Pooya; Blaabjerg, Frede

2018-01-01

Adjustable speed drives (ASD) are widely used in industry for energy savings, where low-cost diode rectifiers are still employed as the front-ends, also for simplicity in control and reliability in operation. However, significant harmonics appear at the grid, which should be tackled according...... a harmonic mitigation strategy for multiple ASD systems, where silicon-controlled rectifiers (SCR) with boost converters in the dc-link have been adopted to increase the harmonic-current controllability. More specific, the SCR firing angles are deliberately dispatched among the drive units, which results...

Small-Signal Analysis of Single-Phase and Three-phase DC/AC and AC/DC PWM Converters with the Frequency-Shift Technique

DEFF Research Database (Denmark)

Blaabjerg, Frede; Aquila, A. Dell’; Liserre, Marco

2004-01-01

of dc/dc converters via a 50 Hz frequency-shift. The input admittance is calculated and measured for two study examples (a three-phase active rectifier and a single-phase photovoltaic inverter). These examples show that the purpose of a well designed controller for grid-connected converters......A systematic approach to study dc/ac and ac/dc converters without the use of synchronous transformation is proposed. The use of a frequency-shift technique allows a straightforward analysis of single-phase and three-phase systems. The study of dc/ac and of ac/dc converters is reported to the study...... is to minimize the input admittance in order to make the grid converter more robust to grid disturbance....

Boost Half-Bridge DC-DC Converter with Reconfigurable Rectifier for Ultra-Wide Input Voltage Range Applications

DEFF Research Database (Denmark)

Vinnikov, Dmitri; Chub, Andrii; Liivik, Elizaveta

2018-01-01

This paper introduces a novel galvanically isolated boost half-bridge dc-dc converter intended for modern power electronic applications where ultra-wide input voltage regulation range is needed. A reconfigurable output rectifier stage performs a transition between the voltage doubler and the full......-bridge diode rectifiers and, by this means, extends the regulation range significantly. The converter features a low number of components and resonant soft switching of semiconductors, which result in high power conversion efficiency over a wide input voltage and load range. The paper presents the operating...

Manufacture of the rectifier of the HT-7U PFPS

International Nuclear Information System (INIS)

Gao Ge; Fu Peng; Tang Lunjun; Wang Linsen

2005-01-01

The rectifiers of the HT-7U poloidal field power supply (PFPS) are introduced. A new control method, four quadrants converter, is brought forward, which overcomes the short-coming of both the circulating current mode and the non-circulating current mode. This control mode also resolves the problem of DC circulating current in the identical phase anti-parallel connection rectifiers when these rectifiers run in the circulating current mode. (authors)

3-D printed 2.4 GHz rectifying antenna for wireless power transfer applications

Science.gov (United States)

Skinner, Matthew

In this work, a 3D printed rectifying antenna that operates at the 2.4GHz WiFi band was designed and manufactured. The printed material did not have the same properties of bulk material, so the printed materials needed to be characterized. The antenna and rectifying circuit was printed out of Acrylonitrile Butadiene Styrene (ABS) filament and a conductive silver paste, with electrical components integrated into the circuit. Before printing the full rectifying antenna, each component was printed and evaluated. The printed antenna operated at the desired frequency with a return loss of -16 dBm with a bandwidth of 70MHz. The radiation pattern was measured in an anechoic chamber with good matching to the model. The rectifying circuit was designed in Ansys Circuit Simulation using Schottky diodes to enable the circuit to operate at lower input power levels. Two rectifying circuits were manufactured, one by printing the conductive traces with silver ink, and one with traces made from copper. The printed silver ink is less conductive than the bulk copper and therefore the output voltage of the printed rectifier was lower than the copper circuit. The copper circuit had an efficiency of 60% at 0dBm and the printed silver circuit had an efficiency of 28.6% at 0dBm. The antenna and rectifying circuits were then connected to each other and the performance was compared to a fully printed integrated rectifying antenna. The rectifying antennas were placed in front of a horn antenna while changing the power levels at the antenna. The efficiency of the whole system was lower than the individual components but an efficiency of 11% at 10dBm was measured.

Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode

International Nuclear Information System (INIS)

Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Peters, David W.; Davids, Paul S.

2016-01-01

The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO_2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excite infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

Science.gov (United States)

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

High current and high power superconducting rectifiers

International Nuclear Information System (INIS)

Kate, H.H.J. ten; Bunk, P.B.; Klundert, L.J.M. van de; Britton, R.B.

1981-01-01

Results on three experimental superconducting rectifiers are reported. Two of them are 1 kA low frequency flux pumps, one thermally and magnetically switched. The third is a low-current high-frequency magnetically switched rectifier which can use the mains directly. (author)

A modified two-level three-phase quasi-soft-switching inverter

DEFF Research Database (Denmark)

Liu, Yusheng; Wu, Weimin; Blaabjerg, Frede

2014-01-01

A traditional Voltage Source Inverter (VSI) has higher efficiency than a Current Voltage Source (CSI) due to the less conduction power loss. However, the reverse recovery of the free-wheeling diode limits the efficiency improvement for the silicon devices based hard-switching VSI. The traditional...... quasi-soft-switching inverter can alternate between VSI and CSI by using a proper control scheme and thereby reduce the power losses caused by the reverse recovery of the free-wheeling diode. Nevertheless, slightly extra conduction power loss of the auxiliary switch is also introduced. In order...... to reduce the extra conduction power loss and the voltage stress across the DC-link capacitor, a modified two-level three-phase quasi-soft-switching inverter is proposed by using a SiC MOSFET instead of an IGBT. The principle of the modified two-level three-phase quasi-soft-switching inverter is analyzed...

A digital optical phase-locked loop for diode lasers based on field programmable gate array

Science.gov (United States)

Xu, Zhouxiang; Zhang, Xian; Huang, Kaikai; Lu, Xuanhui

2012-09-01

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad2 and transition time of 100 μs under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

Semi-conductor rectifiers

International Nuclear Information System (INIS)

1981-01-01

A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

A Multi-Pulse Front-End Rectifier System with Electronic Phase-Shifting for Harmonic Mitigation in Motor Drive Applications

DEFF Research Database (Denmark)

Zare, Firuz; Davari, Pooya; Blaabjerg, Frede

2016-01-01

In this paper, an electronic phase-shifting strategy has been optimized for a multi-parallel configuration of line-commutated rectifiers with a common dc-bus voltage used in motor drive application. This feature makes the performance of the system independent of the load profile and maximizes its...

A Fault-Tolerant Parallel Structure of Single-Phase Full-Bridge Rectifiers for a Wound-Field Doubly Salient Generator

DEFF Research Database (Denmark)

Chen, Zhihui; Chen, Ran; Chen, Zhe

2013-01-01

The fault-tolerance design is widely adopted for high-reliability applications. In this paper, a parallel structure of single-phase full-bridge rectifiers (FBRs) (PS-SPFBR) is proposed for a wound-field doubly salient generator. The analysis shows the potential fault-tolerance capability of the PS...

Fabrication and characterization of the charge-plasma diode

NARCIS (Netherlands)

Rajasekharan, B.; Hueting, Raymond Josephus Engelbart; Salm, Cora; van Hemert, T.; Wolters, Robertus A.M.; Schmitz, Jurriaan

2010-01-01

We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low

Diode Laser Raman Scattering Prototype Gas-Phase Environmental Monitoring

National Research Council Canada - National Science Library

Benner, Robert

1999-01-01

We proposed developing a diode-laser-based, full spectrum Raman scattering instrument incorporating a multipass, external cavity enhancement cell for full spectrum, gas phase analysis of environmental pollutants...

Single Phase Current-Source Active Rectifier for Traction: Control System Design and Practical Problems

Directory of Open Access Journals (Sweden)

Jan Michalik

2006-01-01

Full Text Available This research has been motivated by industrial demand for single phase current-source active rectifier dedicated for reconstruction of older types of dc machine locomotives. This paper presents converters control structure design and simulations. The proposed converter control is based on the mathematical model and due to possible interaction with railway signaling and required low switching frequency employs synchronous PWM. The simulation results are verified by experimental tests performed on designed laboratory prototype of power of 7kVA

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface.

Science.gov (United States)

Lenfant, S; Guerin, D; Tran Van, F; Chevrot, C; Palacin, S; Bourgoin, J P; Bouloussa, O; Rondelez, F; Vuillaume, D

2006-07-20

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices, and we examine the extent to which the nature of the pi end group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. Self-assembled monolayers of alkyl chains (different chain lengths from 6 to 15 methylene groups) functionalized by phenyl, anthracene, pyrene, ethylene dioxythiophene, ethylene dioxyphenyl, thiophene, terthiophene, and quaterthiophene were synthesized and characterized by contact angle measurements, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy. We demonstrate that reasonably well-packed monolayers are obtained in all cases. Their electrical properties were assessed by dc current-voltage characteristics and high-frequency (1-MHz) capacitance measurements. For all of the pi groups investigated here, we observed rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (Lenfant et al., Nano Lett. 2003, 3, 741). The experimental current-voltage curves were analyzed with a simple analytical model, from which we extracted the energy position of the molecular orbital of the pi group in resonance with the Fermi energy of the electrodes. We report experimental studies of the band lineup in these silicon/alkyl pi-conjugated molecule/metal junctions. We conclude that Fermi-level pinning at the pi group/metal interface is mainly responsible for the observed absence of a dependence of the rectification effect on the nature of the pi groups, even though the groups examined were selected to have significant variations in their electronic molecular orbitals.

A digital optical phase-locked loop for diode lasers based on field programmable gate array

Energy Technology Data Exchange (ETDEWEB)

Xu Zhouxiang; Zhang Xian; Huang Kaikai; Lu Xuanhui [Physics Department, Zhejiang University, Hangzhou, 310027 (China)

2012-09-15

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

Science.gov (United States)

Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

2017-10-27

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes

Directory of Open Access Journals (Sweden)

Yaksh Rawal

2012-01-01

Full Text Available Remotely empowered wireless sensor networks use different energy resources including photovoltaic solar cells, wireless power transmission, and batteries. As another option the electromagnetic energy available in the ambient can be harvested to power these remote sensors. This is particularly valuable if it is desirable to harvest the ambient energy available in the wide range of electromagnetic spectrum. This has motivated the research for developing energy harvesting devices which can absorb this energy and produce a DC voltage. Rectenna, an antenna coupled with a rectifier, is the main component used for absorbing electromagnetic radiation at GHz and THz frequencies. Rectifying MIM tunnel diodes are able to operate at tens and hundreds of GHz frequency. As the preliminary steps towards development of high-frequency rectifiers, this paper presents fabrication and DC characterization of two new MIM diodes, Ti-TiO2-Al and Ti-TiO2-Pt. G-V analysis of the fabricated diodes verifies tunneling. Brinkman-Dynes-Rowell model is used to extract oxide thickness of which the derived value is around 9 nm. Ti-TiO2-Pt diode exhibits rectification ratio of 15 at 0.495 V, which is more than rectification ratio reported in earlier works.

Systematic study of metal-insulator-metal diodes with a native oxide

KAUST Repository

Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

2014-01-01

© 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna

Effect of rotor rectifier on motor performance in slip recovery drives

Energy Technology Data Exchange (ETDEWEB)

Al Zahawi, B.A.T.; Jones, B.L.; Drury, W.

1987-01-01

The static Kramer system, comprising a slip-ring induction motor and a slip energy recovery circuit, is one of the simplest and most efficient forms of ac variable-speed drive. It is sometimes used to upgrade drives which had originally been designed for fixed speed operation, often with substantial energy savings. In such cases, it is important to know how the inclusion of a rectifier in the slip energy recovery circuit affects motor performance. A satisfactory model for the motor-rectifier combination is also needed to provide a sound basis for assessing alternative forms of recovery systems which aim to overcome the principal shortcomings of the drive, namely the magnitude and variability of its reactive power. Despite its simplicity, the Kramer drive presents a formidable analytical challenge. Rigorous analysis is particularly difficult and there is a need for a simpler form of analysis when calculating ratings and steady-state performance. The approach taken in this paper uses a transformer-type model for the motor, and largely analytical expressions for predicting torque, stator power, stator reactive power and rectifier output voltage. Motor resistances, diode characteristics, and the several possible rectifier overlap modes are included. It is shown that the rectifier has an adverse effect on stator reactive power, power factor, and peak torque, particularly at speeds well below synchronous, requiring some derating of motors designed for resistance control and also requiring additional power factor correction. While the analysis does not cater to variations caused by harmonics at some speeds, it does provide a quick, accurate method of predicting performance over most sections of the operating range. 12 refs., 11 figs.

Cardiac Delayed Rectifier Potassium Channels in Health and Disease

Science.gov (United States)

Chen, Lei; Sampson, Kevin J.; Kass, Robert S.

2016-01-01

Cardiac delayed rectifier potassium channels conduct outward potassium currents during the plateau phase of action potentials and play pivotal roles in cardiac repolarization. These include IKs, IKr and the atrial specific IKur channels. In this chapter, we will review the molecular identities and biophysical properties of these channels. Mutations in the genes encoding delayed rectifiers lead to loss- or gain-of-function phenotypes, disrupt normal cardiac repolarization and result in various cardiac rhythm disorders, including congenital Long QT Syndrome, Short QT Syndrome and familial atrial fibrillation. We will also discuss the possibility and prospect of using delayed rectifier channels as therapeutic targets to manage cardiac arrhythmia. PMID:27261823

Cardiac Delayed Rectifier Potassium Channels in Health and Disease.

Science.gov (United States)

Chen, Lei; Sampson, Kevin J; Kass, Robert S

2016-06-01

Cardiac delayed rectifier potassium channels conduct outward potassium currents during the plateau phase of action potentials and play pivotal roles in cardiac repolarization. These include IKs, IKr and the atrial specific IKur channels. In this article, we will review their molecular identities and biophysical properties. Mutations in the genes encoding delayed rectifiers lead to loss- or gain-of-function phenotypes, disrupt normal cardiac repolarization and result in various cardiac rhythm disorders, including congenital Long QT Syndrome, Short QT Syndrome and familial atrial fibrillation. We will also discuss the prospect of using delayed rectifier channels as therapeutic targets to manage cardiac arrhythmia. Copyright © 2016 Elsevier Inc. All rights reserved.

Low-cost automated system for phase-shifting and phase retrieval based on the tunability of a laser diode

Science.gov (United States)

Rivera-Ortega, Uriel; Dirckx, Joris

2016-09-01

A low-cost and fully automated process for phase-shifting interferometry by continuously changing and turning on-off the input voltage of a laser diode under the scheme of an unbalanced Twyman-Green interferometer setup is presented. The input signal of a laser diode is controlled by a Data Acquisition (NI-DAQ) device which permits to change its wavelength according to its tunability features. The automation and data analysis will be done using LabVIEW in combination with MATLAB. By using Carré algorithm the phase map is obtained. Measurements of visibility and phase-shift to verify the PSI requirements are also shown.

Analysis of three-phase power-supply systems using computer-aided design programs

International Nuclear Information System (INIS)

Oberst, E.F.

1977-01-01

A major concern of every designer of large, three-phase power-supply systems is the protection of system components from overvoltage transients. At present, three computer-aided circuit design programs are available in the Magnetic Fusion Energy (MFE) National Computer Center that can be used to analyze three-phase power systems: MINI SCEPTRE, SPICE I, and SPICE II. These programs have been used at Lawrence Livermore Laboratory (LLL) to analyze the operation of a 200-kV dc, 20-A acceleration power supply for the High Voltage Test Stand. Various overvoltage conditions are simulated and the effectiveness of system protective devices is observed. The simulated overvoltage conditions include such things as circuit breaker openings, pulsed loading, and commutation voltage surges in the rectifiers. These examples are used to illustrate the use of the computer-aided, circuit-design programs discussed in this paper

High performance Schottky diodes based on indium-gallium-zinc-oxide

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)

2016-07-15

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

Mitigating impact of thermal and rectified radio-frequency sheath potentials on edge localized modes

Energy Technology Data Exchange (ETDEWEB)

Gui, B. [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Lawerence Livermore National Lab, Livermore, California 94550 (United States); Xu, X. Q. [Lawerence Livermore National Lab, Livermore, California 94550 (United States); Myra, J. R.; D' Ippolito, D. A. [Lodestar Research Corporation, Boulder, Colorado 80301 (United States)

2014-11-15

The mitigating impact of thermal and rectified radio frequency (RF) sheath potentials on the peeling-ballooning modes is studied non-linearly by employing a two-fluid three-field simulation model based on the BOUT++ framework. Additional shear flow and the Kelvin-Helmholtz effect due to the thermal and rectified RF sheath potential are induced. It is found that the shear flow increases the growth rate while the K-H effect decreases the growth rate slightly when there is a density gradient, but the energy loss of these cases is suppressed in the nonlinear phase. The stronger external electrostatic field due to the sheaths has a more significant effect on the energy loss suppression. From this study, it is found the growth rate in the linear phase mainly determines the onset of edge-localized modes, while the mode spectrum width in the nonlinear phase has an important impact on the turbulent transport. The wider mode spectrum leads to weaker turbulent transport and results in a smaller energy loss. Due to the thermal sheath and rectified RF sheath potential in the scrape-off-layer, the modified shear flow tears apart the peeling-ballooning filament and makes the mode spectrum wider, resulting in less energy loss. The perturbed electric potential and the parallel current near the sheath region is also suppressed locally due to the sheath boundary condition.

Common voltage eliminating of SVM diode clamping three-level inverter connected to grid

DEFF Research Database (Denmark)

Guo, Yougui; Zeng, Ping; Zhu, Jieqiong

2011-01-01

A novel method of common voltage eliminating is put forward for SVM diode clamping three-level inverter connected to grid by calculation of common voltage of its various switching states. PLECS is used to model this three-level inverter connected to grid and good results are obtained. First...... analysis of common mode voltage for switching states of diode clamping 3-level inverter is given in detail. Second the common mode voltage eliminating control strategy of SVM is described for diode clamping three-level inverter. Third, PLECS is briefly introduced. Fourth, the modeling of diode clamping...... three-level inverter is presented with PLECS. Finally, a series of simulations are carried out. The simulation results tell us PLECS is a very powerful tool to real power circuits modeling. They have also verified that proposed common mode voltage eliminating control strategy of SVM is feasible...

Intermittency-induced criticality in a resistor-inductor-diode circuit.

Science.gov (United States)

Potirakis, Stelios M; Contoyiannis, Yiannis; Diakonos, Fotios K; Hanias, Michael P

2017-04-01

The current fluctuations of a driven resistor-inductor-diode circuit are investigated here looking for signatures of critical behavior monitored by the driving frequency. The experimentally obtained time series of the voltage drop across the resistor (as directly proportional to the current flowing through the circuit) were analyzed by means of the method of critical fluctuations in analogy to thermal critical systems. Intermittent criticality was revealed for a critical frequency band signifying the transition between the normal rectifier phase in the low frequencies and a full-wave conducting, capacitorlike phase in the high frequencies. The transition possesses critical characteristics with a characteristic exponent p_{l}=1.65. A fractal analysis in terms of the rescale range (R/RSS) and detrended fluctuation analysis methods yielded results fully compatible with the critical dynamics analysis. Suggestions for the interpretation of the observed behavior in terms of p-n junction operation are discussed.

Flexible diodes for radio frequency (RF) electronics: a materials perspective

KAUST Repository

Semple, James; Georgiadou, Dimitra G; Wyatt-Moon, Gwenhivir; Gelinck, Gerwin; Anthopoulos, Thomas D.

2017-01-01

Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

Flexible diodes for radio frequency (RF) electronics: a materials perspective

KAUST Repository

Semple, James

2017-10-30

Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

Flexible diodes for radio frequency (RF) electronics: a materials perspective

Science.gov (United States)

Semple, James; Georgiadou, Dimitra G.; Wyatt-Moon, Gwenhivir; Gelinck, Gerwin; Anthopoulos, Thomas D.

2017-12-01

Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

Superhigh-frequency circuit for the EPR spectrometer with rectifier screening

International Nuclear Information System (INIS)

Zhizhchenko, G.A.; Tsvirko, L.V.

1983-01-01

The hamodyne SHF circuit of a 3-cm EPR spectrometer with a reflecting resonator is described. The optimum operating mode of SHF-rectifier at a constant phase difference is automatically assured in the circuit. The circuit employs a reflecting p-i-n- attenuator and a SHF-rectifier sereen which simplify the spectrometer tuming. The circuit is used in a miniature EPR radiospectrometer Minsk EPR-6-type

28.3THz bowtie antenna integrated rectifier for infrared energy harvesting

KAUST Repository

Gadalla, Mena N.

2014-10-01

The design, fabrication and characterization of an asymmetric 28.3 THz antenna integrated rectifier (rectenna) using Au/Al2O3/Pt is presented. The rectenna design comprises a sharp tip bowtie antenna and a tunneling Metal-insulator-Metal (MIM) diode. The design benefits from the geometric field enhancement around the nano tips of the bowtie antenna. Simultaneous optimization of the antenna\\'s length and flare angle resulted in a relative intensity enhancement of 104 for a 10 nm gap. In order to benefit from the field enhancement, the THz diode is realized through the overlap of the bowtie sharp tips exactly at the hot spot. Dissimilar electrodes are used to allow THz signals rectification at zero bias, which is critical for energy harvesting applications. The rectenna exhibits a zero bias responsivity of 10 A/W. © 2014 European Microwave Association.

Analysis and control of high power synchronous rectifier

Energy Technology Data Exchange (ETDEWEB)

Singh Tejinder.

1993-01-01

The description, steady state/dynamic analysis and control design of a high power synchronous rectifier is presented. The proposed rectifier system exploits selective harmonic elimination modulation techniques to minimize filtering requirements, and overcomes the dc voltage limitations of prior art equipment. A detailed derivation of the optimum pulse width modulation switching patterns, in the low frequency range for high power applications is presented. A general mathematical model of the rectifier is established which is non-linear and time-invariant. The transformation of reference frame and small signal linearization techniques are used to obtain closed form solutions from the mathematical model. The modelling procedure is verified by computer simulation. The closed loop design of the synchronous rectifier based on a phase and amplitude control strategy is investigated. The transfer functions derived from this analysis are used for the design of the regulators. The steady-state and dynamic results predicted by computer simulation are verified by PECAN. A systematic design procedure is developed and a detailed design example of a 1 MV-amp rectifer system is presented. 23 refs., 33 figs.

The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

International Nuclear Information System (INIS)

Aydin, M. E.

2008-01-01

n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

High Current Ionic Diode Using Homogeneously Charged Asymmetric Nanochannel Network Membrane.

Science.gov (United States)

Choi, Eunpyo; Wang, Cong; Chang, Gyu Tae; Park, Jungyul

2016-04-13

A high current ionic diode is achieved using an asymmetric nanochannel network membrane (NCNM) constructed by soft lithography and in situ self-assembly of nanoparticles with uniform surface charge. The asymmetric NCNM exhibits high rectified currents without losing a rectification ratio because of its ionic selectivity gradient and differentiated electrical conductance. Asymmetric ionic transport is analyzed with diode-like I-V curves and visualized via fluorescent dyes, which is closely correlated with ionic selectivity and ion distribution according to variation of NCNM geometries.

Electrical characterization of the ITO/NiPc/PEDOT : PSS junction diode

Energy Technology Data Exchange (ETDEWEB)

Shah, Mutabar; Sayyad, M H; Karimov, Kh S; Wahab, Fazal, E-mail: mutabar_shah@hotmail.co, E-mail: mutabarshah@gmail.co [Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi, Khyber Pakhtunkhwa 23640 (Pakistan)

2010-10-13

This paper reports on the fabrication and characterization of an ITO/NiPc/PEDOT : PSS junction diode. A thin film of nickel phthalocyanine (NiPc) was deposited by the thermal vacuum deposition method on indium tin oxide (ITO) used as a substrate. The current-voltage characteristics of the diode were measured at room temperature under dark condition and showed rectifying behaviour. The values of several electrical parameters such as ideality factor, barrier height, conductivity, and series and shunt resistances were calculated.

Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p–n device

International Nuclear Information System (INIS)

Zhou, Yuhong; Qiu, Nianxiang; Li, Runwei; Guo, Zhansheng; Zhang, Jian; Fang, Junfeng; Huang, Aisheng; He, Jian; Zha, Xianhu; Luo, Kan; Yin, Jingshuo; Li, Qiuwu; Bai, Xiaojing; Huang, Qing; Du, Shiyu

2016-01-01

Employing nonequilibrium Green's Functions in combination with density functional theory, the electronic transport properties of armchair graphene nanoribbon (GNR) devices with various widths are investigated in this work. In the adopted model, two semi-infinite graphene electrodes are periodically doped with boron or nitrogen atoms. Our calculations reveal that these devices have a striking nonlinear feature and show notable negative differential resistance (NDR). The results also indicate the diode-like properties are reserved and the rectification ratios are high. It is found the electronic transport properties are strongly dependent on the width of doped nanoribbons and the positions of dopants and three distinct families are elucidated for the current armchair GNR devices. The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage. These findings suggest that the doped armchair GNR is a promising candidate for the next generation nanoscale device. - Highlights: • The negative differential resistance (NDR) and rectification phenomena have been observed for the B- and N-doping armchair graphene nanoribbon (GNR) devices. • The electronic transport properties are strongly dependent on the width of doped nanoribbons and exhibit three distinct families. • The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage.

Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p–n device

Energy Technology Data Exchange (ETDEWEB)

Zhou, Yuhong; Qiu, Nianxiang; Li, Runwei [Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo 315201 (China); Guo, Zhansheng [Shanghai Institute of Applied Mathematics and Mechanics, Shanghai 200072 (China); Zhang, Jian; Fang, Junfeng; Huang, Aisheng [Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo 315201 (China); He, Jian [Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Zha, Xianhu; Luo, Kan; Yin, Jingshuo; Li, Qiuwu; Bai, Xiaojing; Huang, Qing [Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo 315201 (China); Du, Shiyu, E-mail: dushiyu@nimte.ac.cn [Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo 315201 (China)

2016-03-06

Employing nonequilibrium Green's Functions in combination with density functional theory, the electronic transport properties of armchair graphene nanoribbon (GNR) devices with various widths are investigated in this work. In the adopted model, two semi-infinite graphene electrodes are periodically doped with boron or nitrogen atoms. Our calculations reveal that these devices have a striking nonlinear feature and show notable negative differential resistance (NDR). The results also indicate the diode-like properties are reserved and the rectification ratios are high. It is found the electronic transport properties are strongly dependent on the width of doped nanoribbons and the positions of dopants and three distinct families are elucidated for the current armchair GNR devices. The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage. These findings suggest that the doped armchair GNR is a promising candidate for the next generation nanoscale device. - Highlights: • The negative differential resistance (NDR) and rectification phenomena have been observed for the B- and N-doping armchair graphene nanoribbon (GNR) devices. • The electronic transport properties are strongly dependent on the width of doped nanoribbons and exhibit three distinct families. • The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage.

SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

Energy Technology Data Exchange (ETDEWEB)

Onar, Omer C [ORNL; Tang, Lixin [ORNL; Chinthavali, Madhu Sudhan [ORNL; Campbell, Steven L [ORNL; Miller (JNJ), John M. [JNJ-Miller PLC

2014-01-01

Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.

Designing single phase Current-Programmed-Controlled rectifiers by harmonic currents

DEFF Research Database (Denmark)

Andersen, Gert Karmisholt; Blaabjerg, Frede

2002-01-01

The grid current harmonics of a Current-Programmed-Controlled (CPC) pfc rectifier strongly depends on the choice of switching frequency and switching inductance. This paper describes a new simple and vert fast method to calculate the grid current of a CPC controlled pfc converter. The method...

Pharmacological Conversion of a Cardiac Inward Rectifier into an Outward Rectifier Potassium Channel.

Science.gov (United States)

Moreno-Galindo, Eloy G; Sanchez-Chapula, Jose A; Tristani-Firouzi, Martin; Navarro-Polanco, Ricardo A

2016-09-01

Potassium (K(+)) channels are crucial for determining the shape, duration, and frequency of action-potential firing in excitable cells. Broadly speaking, K(+) channels can be classified based on whether their macroscopic current outwardly or inwardly rectifies, whereby rectification refers to a change in conductance with voltage. Outwardly rectifying K(+) channels conduct greater current at depolarized membrane potentials, whereas inward rectifier channels conduct greater current at hyperpolarized membrane potentials. Under most circumstances, outward currents through inwardly rectifying K(+) channels are reduced at more depolarized potentials. However, the acetylcholine-gated K(+) channel (KACh) conducts current that inwardly rectifies when activated by some ligands (such as acetylcholine), and yet conducts current that outwardly rectifies when activated by other ligands (for example, pilocarpine and choline). The perplexing and paradoxical behavior of KACh channels is due to the intrinsic voltage sensitivity of the receptor that activates KACh channels, the M2 muscarinic receptor (M2R). Emerging evidence reveals that the affinity of M2R for distinct ligands varies in a voltage-dependent and ligand-specific manner. These intrinsic receptor properties determine whether current conducted by KACh channels inwardly or outwardly rectifies. This review summarizes the most recent concepts regarding the intrinsic voltage sensitivity of muscarinic receptors and the consequences of this intriguing behavior on cardiac physiology and pharmacology of KACh channels. Copyright © 2016 by The American Society for Pharmacology and Experimental Therapeutics.

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

Science.gov (United States)

Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

2016-07-26

A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials.

Thermal diode made by nematic liquid crystal

Energy Technology Data Exchange (ETDEWEB)

Melo, Djair, E-mail: djfmelo@gmail.com [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Fernandes, Ivna [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Moraes, Fernando [Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-900, João Pessoa, PB (Brazil); Departamento de Física, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE (Brazil); Fumeron, Sébastien [Institut Jean Lamour, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre les Nancy (France); Pereira, Erms [Escola Politécnica de Pernambuco, Universidade de Pernambuco, Rua Benfíca, 455, Madalena, 50720-001 Recife, PE (Brazil)

2016-09-07

This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed. - Highlights: • An escaped radial disclination as a thermal diode made by a nematic liquid crystal. • Rectifying effects comparable to those caused by carbon and boron nitride nanotubes. • Thermal rectification increasing with radius and decreasing with height of the tube. • Asymmetric BCs cause rectification from the spatial asymmetry produced by the escape. • Symmetric BCs provide rectifications smaller than those yields by asymmetric BCs.

LCフィルタ併用アクティブフィルタの補償特性

OpenAIRE

泉, 勝弘; 堀部, 信吾; 辻, 峰男; 山田, 英二; 小山, 純

2000-01-01

This paper presents a compensation performance of active filter system with LC harmonic filter. The experimental system is composed of DSP controller, IGBT inverter, three-phase LC filter and a condenser input type three-phase diode bridge rectifier. In the experiment, values of the reactor for LC filter are fixed, and condensers of these are adjusted. The compensation effect of LC filter and an active filter with LC filter are confirmed by the experiment.

Molecular diodes in optical rectennas

Science.gov (United States)

Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

2016-09-01

The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

Electroluminescence and rectifying properties of heterojunction LEDs based on ZnO nanorods

International Nuclear Information System (INIS)

Rout, Chandra Sekhar; Rao, C N R

2008-01-01

n-ZnO NR/p-Si and n-ZnO NR/p-PEDOT/PSS heterojunction light-emitting diodes (LEDs) have been fabricated with ZnO nanorods (NRs) grown by a low-temperature method as well as by employing pulsed laser deposition (PLD). The low-temperature method involves growing the ZnO nanorods by the reaction of water with zinc metal. The current-voltage (I-V) characteristics of the heterojunctions show good rectifying diode characteristics. The electroluminescence (EL) spectra of the nanorods show an emission band at around 390 nm and defect related bands in the 400-550 nm region. Room-temperature electroluminescence is detected under forward bias for both the heterostructures. With the low-temperature grown nanorods, the defect related bands in the 400-550 nm range are more intense in the EL spectra, whereas with the PLD grown nanorods, only the 390 nm band is prominent

MPC-SVM method for Vienna rectifier with PMSG used in Wind Turbine Systems

DEFF Research Database (Denmark)

Lee, June-Seok; Bak, Yeongsu; Lee, Kyo-Beum

2016-01-01

Using a Vienna rectifier as the machine-side rectifier of back-to-back converter is advantageous in terms of size and cost compared to three-level topologies and for this reason, the Vienna rectifier has been used in Wind Turbine Systems (WTS). This paper proposes a Model Predictive Control (MPC......) method for the Vienna rectifier used in WTS with a Permanent Magnet Synchronous Generator (PMSG). The proposed MPC method considers the feasible eight-voltage vectors of the Vienna rectifier. In addition, the voltage vectors, which are the center voltage vectors of two feasible adjacent voltage vectors...

Simulation study of a rectifying bipolar ion channel: Detailed model versus reduced model

Directory of Open Access Journals (Sweden)

Z. Ható

2016-02-01

Full Text Available We study a rectifying mutant of the OmpF porin ion channel using both all-atom and reduced models. The mutant was created by Miedema et al. [Nano Lett., 2007, 7, 2886] on the basis of the NP semiconductor diode, in which an NP junction is formed. The mutant contains a pore region with positive amino acids on the left-hand side and negative amino acids on the right-hand side. Experiments show that this mutant rectifies. Although we do not know the structure of this mutant, we can build an all-atom model for it on the basis of the structure of the wild type channel. Interestingly, molecular dynamics simulations for this all-atom model do not produce rectification. A reduced model that contains only the important degrees of freedom (the positive and negative amino acids and free ions in an implicit solvent, on the other hand, exhibits rectification. Our calculations for the reduced model (using the Nernst-Planck equation coupled to Local Equilibrium Monte Carlo simulations reveal a rectification mechanism that is different from that seen for semiconductor diodes. The basic reason is that the ions are different in nature from electrons and holes (they do not recombine. We provide explanations for the failure of the all-atom model including the effect of all the other atoms in the system as a noise that inhibits the response of ions (that would be necessary for rectification to the polarizing external field.

A zero-voltage-switched three-phase interleaved buck converter

Science.gov (United States)

Hsieh, Yao-Ching; Huang, Bing-Siang; Lin, Jing-Yuan; Pham, Phu Hieu; Chen, Po-Hao; Chiu, Huang-Jen

2018-04-01

This paper proposes a three-phase interleaved buck converter which is composed of three identical paralleled buck converters. The proposed solution has three shunt inductors connected between each other of three basic buck conversion units. With the help of the shunt inductors, the MOSFET parasitic capacitances will resonate to achieve zero-voltage-switching. Furthermore, the decreasing rate of the current through the free-wheeling diodes is limited, and therefore, their reverse-recovery losses can be minimised. The active power switches are controlled by interleaved pulse-width modulation signals to reduce the input and output current ripples. Therefore, the filtering capacitances on the input and output sides can be reduced. The power efficiency is measured to be as high as 98% in experiment with a prototype circuit.

Performance enhancement of the single-phase series active filter by employing the load voltage waveform reconstruction and line current sampling delay reduction methods

DEFF Research Database (Denmark)

Senturk, O.S.; Hava, A.M.

2011-01-01

This paper proposes the waveform reconstruction method (WRM), which is utilized in the single-phase series active filter's (SAF's) control algorithm, in order to extract the load harmonic voltage component of voltage harmonic type single-phase diode rectifier loads. Employing WRM and the line...... current sampling delay reduction method, a single-phase SAF compensated system provides higher harmonic isolation performance and higher stability margins compared to the system using conventional synchronous-reference-frame-based methods. The analytical, simulation, and experimental studies of a 2.5 k...

RF rectifiers for EM power harvesting in a Deep Brain Stimulating device.

Science.gov (United States)

Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah; Kaynak, Akif; Berk, Michael

2015-03-01

A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device.

Tunable Schottky diodes fabricated from crossed electrospun SnO{sub 2}/PEDOT-PSSA nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Carrasquillo, Katherine V. [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico)

2012-06-25

Graphical abstract: Crossed SnO{sub 2}/PEDOT-PSSA nanoribbon Schottky diodes. Highlight: Black-Right-Pointing-Pointer An inexpensive electrospinning technique is used to fabricate crossed nanoribbons of n-doped tin oxide and p-PEDOT. Black-Right-Pointing-Pointer Each intersection is a localized Schottky diode that is completely exposed to the environment after electrodes deposition. Black-Right-Pointing-Pointer This makes it useful as a gas and light sensor. Black-Right-Pointing-Pointer In addition, the ability to tune the diode parameters via a back gate truly makes this device multifunctional. Black-Right-Pointing-Pointer A half wave rectifier has been demonstrated with this device under UV illumination. - Abstract: Schottky diodes have been fabricated on doped Si/SiO{sub 2} substrates in air, by simply crossing individual electrospun tin oxide (SnO{sub 2}) and poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSSA) nanoribbons. The conductivity of PEDOT-PSSA was {approx}6 S/cm with no observable field effect, while SnO{sub 2} exhibited n-doped field effect behavior with a charge mobility of {approx}3.1 cm{sup 2}/V-s. The diodes operate in air or in vacuum, under ambient illumination or in the dark, with low turn-on voltages and device parameters that are tunable via a back gate bias or a UV light source. Their unique design involves a highly localized active region that is completely exposed to the surrounding environment, making them potentially attractive for use as sensors. The standard thermionic emission model of a Schottky junction was applied to analyze the forward bias diode characteristics and was successfully tested as a half wave rectifier.

Inhibition of cardiac inward rectifier currents by cationic amphiphilic drugs.

Science.gov (United States)

van der Heyden, M A G; Stary-Weinzinger, A; Sanchez-Chapula, J A

2013-09-01

Cardiac inward rectifier channels belong to three different classes of the KIR channel protein family. The KIR2.x proteins generate the classical inward rectifier current, IK1, while KIR3 and KIR6 members are responsible for the acetylcholine responsive and ATP sensitive inward rectifier currents IKAch and IKATP, respectively. Aberrant function of these channels has been correlated with severe cardiac arrhythmias, indicating their significant contribution to normal cardiac electrophysiology. A common feature of inward rectifier channels is their dependence on the lipid phosphatidyl-4,5-bisphospate (PIP2) interaction for functional activity. Cationic amphiphilic drugs (CADs) are one of the largest classes of pharmaceutical compounds. Several widely used CADs have been associated with inward rectifier current disturbances, and recent evidence points to interference of the channel-PIP2 interaction as the underlying mechanism of action. Here, we will review how six of these well known drugs, used for treatment in various different conditions, interfere in cardiac inward rectifier functioning. In contrast, KIR channel inhibition by the anionic anesthetic thiopental is achieved by a different mechanism of channel-PIP2 interference. We will discuss the latest basic science insights of functional inward rectifier current characteristics, recently derived KIR channel structures and specific PIP2-receptor interactions at the molecular level and provide insight in how these drugs interfere in the structure-function relationships.

Phase Locking of Laser Diode Array by Using an Off-Axis External Talbot Cavity

International Nuclear Information System (INIS)

Su Zhou-Ping; Zhu Zhuo-Wei; Que Li-Zhi; Zhu Yun; Ji Zhi-Cheng

2012-01-01

Phase locking of a laser diode array is demonstrated experimentally by using an off-axis external Talbot cavity with a feedback plane mirror. Due to good spatial mode discrimination, the cavity does not need a spatial filter. By employing the cavity, a clear and stable far-field interference pattern can be observed when the driver current is less than 14 A. In addition, the spectral line width can be reduced to 0.8 nm. The slope efficiency of the phase-locked laser diode array is about 0.62 W/A. (fundamental areas of phenomenology(including applications))

Phase-coherent all-optical frequency division by three

NARCIS (Netherlands)

Lee, Dong-Hoon; Klein, M.E.; Meyn, Jan-Peter; Wallenstein, Richard; Gross, P.; Boller, Klaus J.

2003-01-01

The properties of all-optical phase-coherent frequency division by 3, based on a self-phase-locked continuous-wave (cw) optical parametric oscillator (OPO), are investigated theoretically and experimentally. The frequency to be divided is provided by a diode laser master-oscillator power-amplifier

An isolated bridgeless AC-DC PFC converter using a LC resonant voltage doubler rectifier

Science.gov (United States)

Lee, Sin-woo; Do, Hyun-Lark

2016-12-01

This paper proposed an isolated bridgeless AC-DC power factor correction (PFC) converter using a LC resonant voltage doubler rectifier. The proposed converter is based on isolated conventional single-ended primary inductance converter (SEPIC) PFC converter. The conduction loss of rectification is reduced than a conventional one because the proposed converter is designed to eliminate a full-bridge rectifier at an input stage. Moreover, for zero-current switching (ZCS) operation and low voltage stresses of output diodes, the secondary of the proposed converter is designed as voltage doubler with a LC resonant tank. Additionally, an input-output electrical isolation is provided for safety standard. In conclusion, high power factor is achieved and efficiency is improved. The operational principles, steady-state analysis and design equations of the proposed converter are described in detail. Experimental results from a 60 W prototype at a constant switching frequency 100 kHz are presented to verify the performance of the proposed converter.

Photosensitive and temperature-dependent I–V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Long, Hao; Ai, Lei [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Li, Songzhan [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei 430073 (China); Huang, Huihui; Mo, Xiaoming; Wang, Haoning; Chen, Zhao; Liu, Yuping [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Fang, Guojia, E-mail: gjfang@whu.edu.cn [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China)

2014-05-01

Highlights: • A p-NiO film/n-ZnO nanorod array heterojunction was prepared. • The heterojunction shows good morphology and crystal properties. • The diode exhibits excellent rectifying behavior. • The diode exhibits strong temperature dependent I–V properties. • The hybrid diode shows good photosensitivity under the ultraviolet irradiation. - Abstract: A p-NiO film/n-ZnO nanorod (NR) array heterojunction was prepared by deposition of NiO film on ZnO NRs using radio-frequency reactive magnetron sputtering. The well-aligned ZnO NRs were fabricated by a simple and economic hydrothermal method on a ZnO:Al-coated glass substrate. Good morphology and crystal properties of the fabricated ZnO NRs and NiO film were confirmed by scanning electron microscopy and X-ray diffraction. The p–n heterojunction exhibits excellent rectifying behaviour and strong temperature-dependent current–voltage properties in the range from −50 to 80 °C. The hybrid NR heterojunction diode shows good photosensitivity under the irradiation of 365 nm ultraviolet light. These results present potential applications in future microelectronic devices based on NiO films and the one-dimensional ZnO nanomaterials.

Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop

Science.gov (United States)

Ogino, Kota; Suzuki, Safumi; Asada, Masahiro

2017-12-01

Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.

A NOVEL THREE PHASE UNITY POWER FACTOR CONVERTER

Directory of Open Access Journals (Sweden)

Bekir Sami SAZAK

1998-03-01

Full Text Available The proposed unity power factor converter system which is able to operate from a 150V three-phase supply whilst delivering the required 200V DC voltage has been built and tested. This circuit functions as a high power factor low harmonic rectifier based on the concept that the peak capacitor voltages are proportional to the line input currents. Hence the low frequency components of the capacitor voltages are also approximately proportional to the line input currents. The system can be designed to achieve nearly sinusoidal supply input currents, when operated with discontinuous resonant capacitor voltages Output power control is achieved by variations of the IGBTs switching frequency. The converter is therefore able to compensate for any changes in the load resistance. The proposed topology offers advantages, including: a relatively simple power, control and protection circuits, high power capability, and high converter efficiencies.

All-carbon nanotube diode and solar cell statistically formed from macroscopic network

Institute of Scientific and Technical Information of China (English)

Albert G. Nasibulin[1,2,3; Adinath M. Funde[3,4; Ilya V. Anoshkin[3; Igor A. Levitskyt[5,6

2015-01-01

Schottky diodes and solar cells are statistically created in the contact area between two macroscopic films of single-walled carbon nanotubes （SWNTs） at the junction of semiconducting and quasi-metallic bundles consisting of several high quality tubes. The n-doping of one of the films allows for photovoltaic action, owing to an increase in the built-in potential at the bundle-to-bundle interface. Statistical analysis demonstrates that the Schottky barrier device contributes significantly to the I-V characteristics, compared to the p-n diode. The upper limit of photovoltaic conversion efficiency has been estimated at N20%, demonstrating that the light energy conversion is very efficient for such a unique solar cell. While there have been multiple studies on rectifying SWNT diodes in the nanoscale environment, this is the first report of a macroscopic all-carbon nanotube diode and solar cell.

Engineered Asymmetric Composite Membranes with Rectifying Properties.

Science.gov (United States)

Wen, Liping; Xiao, Kai; Sainath, Annadanam V Sesha; Komura, Motonori; Kong, Xiang-Yu; Xie, Ganhua; Zhang, Zhen; Tian, Ye; Iyoda, Tomokazu; Jiang, Lei

2016-01-27

Asymmetric composite membranes with rectifying properties are developed by grafting pH-stimulus-responsive materials onto the top layer of the composite structure, which is prepared by two novel block copolymers using a phase-separation technique. This engineered asymmetric composite membrane shows potential applications in sensors, filtration, and nanofluidic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and fabrication of metal-insulator-metal diode for high frequency applications

Science.gov (United States)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

p - n junction diodes fabricated from isolated electrospun fibers of (P(NDI2ODT2)) and an inorganic p-doped semiconductor

Science.gov (United States)

Rosado, Alexander; Pinto, Nicholas

2013-03-01

A simple method to fabricate, under ambient conditions and within seconds, p - n diodes using an individual electrospun poly{[N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}-(P(NDI2ODT2)) fiber and a commercially available p-doped Si/SiO2 substrate is presented. Band bending at the fiber/Si+ interface leads to asymmetric I-V characteristic curves resembling that of a diode. The diode turn-on voltage was in the range 1V and was unaffected via UV light irradiation. The rectification ratio however could be tuned reversibly thereby making this device multifunctional. In addition to being a rectifier, the advantage of our design is the complete exposure of the rectifying junction to the surrounding environment. This has the advantage of making them attractive candidates in the potential fabrication of low power, sensitive and rapid response photo-sensors. NSF

High-frequency, three-phase current controller implementation in an FPGA

Energy Technology Data Exchange (ETDEWEB)

Hartmann, M.; Round, S. D.; Kolar, J. W.

2008-07-01

Three phase rectifiers with switching frequencies of 500 kHz or more require high speed current controllers. At such high switching frequencies analog controllers as well as high speed digital signal processing (DSP) systems have limited performance. In this paper, two high speed current controller implementations using two different field-programmable gate arrays (FPGA) - one for switching frequencies up to 1 MHz and one for switching frequencies beyond 1 MHz - are presented to overcome this performance limitation. Starting with the digital system design all the blocks of the signal chain, containing analog-to-digital (A/D) interface, digital controller implementation using HW-multipliers and implementation of a novel high speed, high resolution pulse width modulation (PWM) are discussed and compared. Final measurements verify the performance of the controllers. (author)

A Digital Phase Lock Loop for an External Cavity Diode Laser

Science.gov (United States)

Wang, Xiao-Long; Tao, Tian-Jiong; Cheng, Bing; Wu, Bin; Xu, Yun-Fei; Wang, Zhao-Ying; Lin, Qiang

2011-08-01

A digital optical phase lock loop (OPLL) is implemented to synchronize the frequency and phase between two external cavity diode lasers (ECDL), generating Raman pulses for atom interferometry. The setup involves all-digital phase detection and a programmable digital proportional-integral-derivative (PID) loop in locking. The lock generates a narrow beat-note linewidth below 1 Hz and low phase-noise of 0.03rad2 between the master and slave ECDLs. The lock proves to be stable and robust, and all the locking parameters can be set and optimized on a computer interface with convenience, making the lock adaptable to various setups of laser systems.

Rectifying behaviour of self assembled porphyrin/fullerene dyads on Au(111)

International Nuclear Information System (INIS)

Matino, F; Arima, V; Maruccio, G; Phaneuf, R J; Sole, R Del; Mele, G; Vasapollo, G; Cingolani, R; Rinaldi, R

2007-01-01

Here we present an Ultra High Vacuum Scanning Tunnelling Microscopy (UHVSTM) and Scanning Tunnelling Spectroscopy (STS) study of self assembled donor-acceptor conjugate dyads, consisting of fulleropyrrolidines and metallo-porphyrins immobilized on gold. The coverage in the fulleropyrrolidine layers was optimized up to obtain isolated protrusions which we identify with isolated dyads since their lateral dimensions are consistent with the fullerene size. The STS study reveals a diode-like asymmetric behaviour of the dyads, different from the surrounding areas. We investigate also the influence of the tunneling conditions on the rectifying ratio which is found to be dependent on the initial set point conditions and to increase by increasing the tip-sample distance

Rectifying behaviour of self assembled porphyrin/fullerene dyads on Au(111)

Energy Technology Data Exchange (ETDEWEB)

Matino, F [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Arima, V [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Maruccio, G [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Phaneuf, R J [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Sole, R Del [Dipartimento di Ingegneria dell' Innovazione - Universita degli Studi di Lecce- via Arnesano, 73100 Lecce (Italy); Mele, G [Dipartimento di Ingegneria dell' Innovazione - Universita degli Studi di Lecce- via Arnesano, 73100 Lecce (Italy); Vasapollo, G [Dipartimento di Ingegneria dell' Innovazione - Universita degli Studi di Lecce- via Arnesano, 73100 Lecce (Italy); Cingolani, R [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy); Rinaldi, R [National Nanotechnology Laboratory (CNR-INFM)- Distretto Tecnologico ISUFI-Universita degli studi di Lecce - via Arnesano, 73100 Lecce (Italy)

2007-04-15

Here we present an Ultra High Vacuum Scanning Tunnelling Microscopy (UHVSTM) and Scanning Tunnelling Spectroscopy (STS) study of self assembled donor-acceptor conjugate dyads, consisting of fulleropyrrolidines and metallo-porphyrins immobilized on gold. The coverage in the fulleropyrrolidine layers was optimized up to obtain isolated protrusions which we identify with isolated dyads since their lateral dimensions are consistent with the fullerene size. The STS study reveals a diode-like asymmetric behaviour of the dyads, different from the surrounding areas. We investigate also the influence of the tunneling conditions on the rectifying ratio which is found to be dependent on the initial set point conditions and to increase by increasing the tip-sample distance.

Temperature-gated thermal rectifier for active heat flow control.

Science.gov (United States)

Zhu, Jia; Hippalgaonkar, Kedar; Shen, Sheng; Wang, Kevin; Abate, Yohannes; Lee, Sangwook; Wu, Junqiao; Yin, Xiaobo; Majumdar, Arun; Zhang, Xiang

2014-08-13

Active heat flow control is essential for broad applications of heating, cooling, and energy conversion. Like electronic devices developed for the control of electric power, it is very desirable to develop advanced all-thermal solid-state devices that actively control heat flow without consuming other forms of energy. Here we demonstrate temperature-gated thermal rectification using vanadium dioxide beams in which the environmental temperature actively modulates asymmetric heat flow. In this three terminal device, there are two switchable states, which can be regulated by global heating. In the "Rectifier" state, we observe up to 28% thermal rectification. In the "Resistor" state, the thermal rectification is significantly suppressed (Rectifier state. This temperature-gated rectifier can have substantial implications ranging from autonomous thermal management of heating and cooling systems to efficient thermal energy conversion and storage.

Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

Science.gov (United States)

Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

2012-09-01

We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

International Nuclear Information System (INIS)

Rodríguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martín, Francisco; Schrebler, Ricardo; Ramos-Barrado, José R.; Dalchiele, Enrique A.

2012-01-01

n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic–organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of ∼ 40% to ∼ 50% in the visible region between 450 and 700 nm. The current–voltage (I–V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range − 4 V to + 4 V. The I–V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: ► Semitransparent inorganic–organic heterojunction thin film diodes investigated ► n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction ► Diodes exhibited an optical transmission of ∼ 40%–∼ 50% in the visible region ► Heterojunction current–voltage features show good rectifying diode characteristics ► A forward to reverse current ratio as high as 35 (− 4 V to + 4 V range) was attained

Systematic study of metal-insulator-metal diodes with a native oxide

Science.gov (United States)

Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

2014-10-01

In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

Systematic study of metal-insulator-metal diodes with a native oxide

KAUST Repository

Donchev, E.

2014-10-07

© 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device\\'s rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

Orofacial lymphatic malformation: management with a three steps diode laser protocol

Science.gov (United States)

Miccoli, Simona; Tempesta, Angela; Limongelli, Luisa; Caporusso, Concetta; Di Venere, Daniela; Petruzzi, Massimo; Lacaita, Mariagrazia; Maiorano, Eugenio; Favia, Gianfranco

2014-01-01

Lymphatic Malformation (LM) according to ISSVA Classification, is a rare benign disorder with unknown aetiology. LM may grow slowly over years or develop rapidly over the course of days becoming a bulky lump, infected or bleeding. We propose our three steps Diode Laser protocol for LM management, based on its persistent vascular blood component. 1. Histological and cytological examination, to evaluate the vascular blood component (10-40%), shows mature lymphocytes with red blood cells and endothelial cells. 2. Diode Laser Photocoagulation (DLP) in pulsed mode (on 100ms / off 400ms) at 10W and 800nm with a 300μm fibre kept 2-3mm from the tissues, to reduce the lesion. 3. Diode Laser surgical excision in pulsed mode (on 50ms / off 200ms) at 8W and 800nm with a 300 μm fibre in close contact with tissues, and histological intraoperative margins control on frozen sections. Even if it has inconstant results (lesions decreasing rate is 10% to 40% proportionally to vascular blood component), DLP simplifies the last and the most important step. Use of Diode Laser also in surgical excision reduces intra and postoperatory complications.

Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

Science.gov (United States)

Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

2013-09-24

We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

Fabrication of polymer Schottky diode with Al-PANI/MWCNT-Au structure

Directory of Open Access Journals (Sweden)

A Hajibadali

2014-11-01

Full Text Available In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating of composite polymer and physical vapor deposition of metals. For this purpose, a thin layer of gold was coated on glass and then composite of polyaniline/multi-walled carbon nanotube was synthesized and spin-coated on gold layer. Finally, a thin layer of aluminum was coated on polymer layer. The current-voltage characteristics of diode were studied and found that I-V curve is nonlinear and nonsymmetrical, showing rectifying behavior. I-V characteristics plotted on a logarithmic scale for Schottky diode showed two distinct power law regions. At lower voltages, the mechanism follows Ohm’s Law and at higher voltages, the mechanism is consistent with space charge limited conduction (SCLC emission. The parameters extracted from I-V characteristics were also calculated.

A Digital Phase Lock Loop for an External Cavity Diode Laser

International Nuclear Information System (INIS)

Wang Xiao-Long; Tao Tian-Jiong; Cheng Bing; Wu Bin; Xu Yun-Fei; Wang Zhao-Ying; Lin Qiang

2011-01-01

A digital optical phase lock loop (OPLL) is implemented to synchronize the frequency and phase between two external cavity diode lasers (ECDL), generating Raman pulses for atom interferometry. The setup involves all-digital phase detection and a programmable digital proportional-integral-derivative (PID) loop in locking. The lock generates a narrow beat-note linewidth below 1 Hz and low phase-noise of 0.03rad 2 between the master and slave ECDLs. The lock proves to be stable and robust, and all the locking parameters can be set and optimized on a computer interface with convenience, making the lock adaptable to various setups of laser systems. (fundamental areas of phenomenology(including applications))

Droplet networks with incorporated protein diodes show collective properties

Science.gov (United States)

Maglia, Giovanni; Heron, Andrew J.; Hwang, William L.; Holden, Matthew A.; Mikhailova, Ellina; Li, Qiuhong; Cheley, Stephen; Bayley, Hagan

2009-07-01

Recently, we demonstrated that submicrolitre aqueous droplets submerged in an apolar liquid containing lipid can be tightly connected by means of lipid bilayers to form networks. Droplet interface bilayers have been used for rapid screening of membrane proteins and to form asymmetric bilayers with which to examine the fundamental properties of channels and pores. Networks, meanwhile, have been used to form microscale batteries and to detect light. Here, we develop an engineered protein pore with diode-like properties that can be incorporated into droplet interface bilayers in droplet networks to form devices with electrical properties including those of a current limiter, a half-wave rectifier and a full-wave rectifier. The droplet approach, which uses unsophisticated components (oil, lipid, salt water and a simple pore), can therefore be used to create multidroplet networks with collective properties that cannot be produced by droplet pairs.

Topology optimization of viscoelastic rectifiers

DEFF Research Database (Denmark)

Jensen, Kristian Ejlebjærg; Szabo, Peter; Okkels, Fridolin

2012-01-01

An approach for the design of microfluidic viscoelastic rectifiers is presented based on a combination of a viscoelastic model and the method of topology optimization. This presumption free approach yields a material layout topologically different from experimentally realized rectifiers...

Experience with in vivo diode dosimetry for verifying radiotherapy dose delivery: Practical implementation of cost-effective approaches

International Nuclear Information System (INIS)

Thwaites, D.I.; Blyth, C.; Carruthers, L.; Elliott, P.A.; Kidane, G.; Millwater, C.J.; MacLeod, A.S.; Paolucci, M.; Stacey, C.

2002-01-01

A systematic programme of in vivo dosimetry using diodes to verify radiotherapy delivered doses began in Edinburgh in 1992. The aims were to investigate the feasibility of routine systematic use of diodes as part of a comprehensive QA programme, to carry out clinical pilot studies to assess the accuracy of dose delivery on each machine and for each site and technique, to identify and rectify systematic deviations, to assess departmental dosimetric precision and to compare to clinical requirements. A further aim was to carry out a cost-benefit evaluation based on the results from the pilot studies to consider how best to use diodes routinely

Thermally and magnetically controlled superconducting rectifiers

International Nuclear Information System (INIS)

Mulder, G.B.J.; TenKate, H.H.J.; Krooshoop, H.J.G.; Van de Klundert, L.J.M.

1989-01-01

The switches of a superconducting rectifier can be controlled either magnetically or thermally. The main purpose of this paper is to point out the differences between both methods of switching and discuss the consequences for the operation of the rectifier. The discussion is illustrated by the experimental results of a rectifier which was tested with magnetically as well as thermally controlled switches. It has an input current of 30 A, an output current of more than 1 kA and an operating frequency of a few Hertz. A superconducting magnet connected to this rectifier can be energized at a rate exceeding 1 MJ/hour and an efficiency of about 97%

Near-field phase-change recording using a GaN laser diode

Science.gov (United States)

Kishima, Koichiro; Ichimura, Isao; Yamamoto, Kenji; Osato, Kiyoshi; Kuroda, Yuji; Iida, Atsushi; Saito, Kimihiro

2000-09-01

We developed a 1.5-Numerical-Aperture optical setup using a GaN blue-violet laser diode. We used a 1.0 mm-diameter super-hemispherical solid immersion lens, and optimized a phase-change disk structure including the cover layer by the method of MTF simulation. The disk surface was polished by tape burnishing technique. An eye-pattern of (1-7)-coded data at the linear density of 80 nm/bit was demonstrated on the phase-change disk below a 50 nm gap height, which was realized through our air-gap servo mechanism.

Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

Energy Technology Data Exchange (ETDEWEB)

Rodriguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martin, Francisco [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Schrebler, Ricardo [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Ramos-Barrado, Jose R. [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Dalchiele, Enrique A., E-mail: dalchiel@fing.edu.uy [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

2012-12-15

n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic-organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of {approx} 40% to {approx} 50% in the visible region between 450 and 700 nm. The current-voltage (I-V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range - 4 V to + 4 V. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: Black-Right-Pointing-Pointer Semitransparent inorganic-organic heterojunction thin film diodes investigated Black-Right-Pointing-Pointer n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction Black-Right-Pointing-Pointer Diodes exhibited an optical transmission of {approx} 40%-{approx} 50% in the visible region Black-Right-Pointing-Pointer Heterojunction current-voltage features show good rectifying diode characteristics Black-Right-Pointing-Pointer A forward to reverse current ratio as high as 35 (- 4 V to + 4 V range) was attained.

46 CFR 183.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

The electrical properties of n-ZnO/p-SnO heterojunction diodes

Science.gov (United States)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

46 CFR 129.360 - Semiconductor-rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

Treating Mucocele in Pediatric Patients Using a Diode Laser: Three Case Reports

Directory of Open Access Journals (Sweden)

Sara M. Bagher

2018-05-01

Full Text Available A mucocele is the most common minor salivary gland disease and among the most common biopsied oral lesions in pediatric patients. Clinically, a mucocele appears as a round well-circumscribed painless swelling ranging from deep blue to mucosa alike in color. Mucoceles rarely resolve on their own and surgical removal under local anesthesia is required in most cases. Different treatment options are described in the literature, including cryosurgery, intra-lesion injection of corticosteroid, micro-marsupialization and conventional surgical removal using a scalpel, and laser ablation. Therefore, the goal of this paper was to report three cases of mucocele removal in pediatric patients using a diode laser with a one-month follow-up. Mucoceles were removed by a pediatric dentist using a diode laser with a wavelength of 930 nm in continuous mode and a power setting of 1.8 Watts. In all cases, no bleeding occurred during or after the procedure and there was no need for suturing. On clinical examination during the one-month follow-up, in all three cases there was minimal or no scarring, minimal post-operative discomfort or pain, and no recurrence. Diode lasers provide an effective, rapid, simple, bloodless and well accepted procedure for treating mucocele in pediatric patients. Minimal post-operative discomfort and scarring was reported by all the three patients.

Treating Mucocele in Pediatric Patients Using a Diode Laser: Three Case Reports.

Science.gov (United States)

Bagher, Sara M; Sulimany, Ayman M; Kaplan, Martin; Loo, Cheen Y

2018-05-09

A mucocele is the most common minor salivary gland disease and among the most common biopsied oral lesions in pediatric patients. Clinically, a mucocele appears as a round well-circumscribed painless swelling ranging from deep blue to mucosa alike in color. Mucoceles rarely resolve on their own and surgical removal under local anesthesia is required in most cases. Different treatment options are described in the literature, including cryosurgery, intra-lesion injection of corticosteroid, micro-marsupialization and conventional surgical removal using a scalpel, and laser ablation. Therefore, the goal of this paper was to report three cases of mucocele removal in pediatric patients using a diode laser with a one-month follow-up. Mucoceles were removed by a pediatric dentist using a diode laser with a wavelength of 930 nm in continuous mode and a power setting of 1.8 Watts. In all cases, no bleeding occurred during or after the procedure and there was no need for suturing. On clinical examination during the one-month follow-up, in all three cases there was minimal or no scarring, minimal post-operative discomfort or pain, and no recurrence. Diode lasers provide an effective, rapid, simple, bloodless and well accepted procedure for treating mucocele in pediatric patients. Minimal post-operative discomfort and scarring was reported by all the three patients.

Experimental investigation of radiative thermal rectifier using vanadium dioxide

Energy Technology Data Exchange (ETDEWEB)

Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp [Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan); Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Nishikawa, Kazutaka; Iizuka, Hideo [Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan); Toshiyoshi, Hiroshi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904 (Japan)

2014-12-22

Vanadium dioxide (VO{sub 2}) exhibits a phase-change behavior from the insulating state to the metallic state around 340 K. By using this effect, we experimentally demonstrate a radiative thermal rectifier in the far-field regime with a thin film VO{sub 2} deposited on the silicon wafer. A rectification contrast ratio as large as two is accurately obtained by utilizing a one-dimensional steady-state heat flux measurement system. We develop a theoretical model of the thermal rectifier with optical responses of the materials retrieved from the measured mid-infrared reflection spectra, which is cross-checked with experimentally measured heat flux. Furthermore, we tune the operating temperatures by doping the VO{sub 2} film with tungsten (W). These results open up prospects in the fields of thermal management and thermal information processing.

Control and design of full-bridge three-level converter for renewable energy sources

DEFF Research Database (Denmark)

Yao, Zhilei; Xu, Jing; Guerrero, Josep M.

2015-01-01

Output voltage of renewable energy sources, such as fuel cell and PV cell, is often low and varies widely with load and environmental conditions. Therefore, the high step-up DC-DC converter is needed between renewable energy sources and the grid-connected inverter. However, voltage stress...... of rectifier diodes is high and filter is large in traditional voltage-source converters in a wide input-voltage range. In order to solve the aforementioned problems, a full-bridge (FB) three-level (TL) converter is proposed. It can operate at both two-level and three-level modes, so it is suitable for wide...

Microrectenna: A Terahertz Antenna and Rectifier on a Chip

Science.gov (United States)

Siegel, Peter

2007-01-01

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m

Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

Science.gov (United States)

Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

2015-07-03

Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

Improved modeling of new three-phase high voltage transformer with magnetic shunts

Directory of Open Access Journals (Sweden)

Chraygane M.

2015-03-01

Full Text Available This original paper deals with a new approach for the study of behavior in nonlinear regime of a new three-phase high voltage power supply for magnetrons, used for the microwave generators in industrial applications. The design of this system is composed of a new three-phase leakage flux transformer supplying by phase a cell, composed of a capacitor and a diode, which multiplies the voltage and stabilizes the current. Each cell. in turn, supplies a single magnetron. An equivalent model of this transformer is developed taking into account the saturation phenomenon and the stabilization process of each magnetron. Each inductance of the model is characterized by a non linear relation between flux and current. This model was tested by EMTP software near the nominal state. The theoretical results were compared to experimental measurements with a good agreement. Relative to the current device, the new systemprovides gains of size, volume, cost of implementation and maintenance which make it more economical.

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.

2013-11-07

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

A 62GHz inductor-peaked rectifier with 7% efficiency

NARCIS (Netherlands)

Gao, H.; Matters - Kammerer, M.; Milosevic, D.; Roermund, van A.H.M.; Baltus, P.G.M.

2013-01-01

This paper presents the first 62 GHz fully onchip RF-DC rectifier in 65nm CMOS technology. The rectifier is the bottleneck in realizing on-chip wireless power receivers. In this paper, efficiency problems of the mm-wave rectifier are discussed and the inductor-peaked rectifier structure is proposed

Rectifier transformer saturation on commutation failure

International Nuclear Information System (INIS)

Lu, E.; Bronner, G.

1989-01-01

The rectifier transformer's service differs from the power transformer's service because of the rectifier load. Under certain fault conditions, such as a commutation failure, d.c. magnetization may be introduced into the rectifier transformer cores, resulting in possible saturation of the magnetic circuit, thus in degradation of the performance of the transformer. It is the purpose of this paper to present an approach for evaluating the electromagnetic transient process under such a fault condition. The studies were made on the operating 1000MVA converter system at the Princeton Plasma Physics Laboratory

Multilevel Converter by Cascading Two-Level Three-Phase Voltage Source Converter

Directory of Open Access Journals (Sweden)

Abdullrahman A. Al-Shamma’a

2018-04-01

Full Text Available This paper proposes a topology using isolated, cascaded multilevel voltage source converters (VSCs and employing two-winding magnetic elements for high-power applications. The proposed topology synthesizes 6 two-level, three-phase VSCs, so the power capability of the presented converter is six times the capability of each VSC module. The characteristics of the proposed topology are demonstrated through analyzing its current relationships, voltage relationships and power capability in detail. The power rating is equally shared among the VSC modules without the need for a sharing algorithm; thus, the converter operates as a single three-phase VSC. The comparative analysis with classical neutral-point clamped, flying capacitor and cascaded H-bridge exhibits the superior features of fewer insulated gate bipolar transistors (IGBTs, capacitor requirement and fewer diodes. To validate the theoretical performance of the proposed converter, it is simulated in a MATLAB/Simulink environment and the results are experimentally demonstrated using a laboratory prototype.

Junction barrier Schottky rectifier with an improved P-well region

International Nuclear Information System (INIS)

Wang Ying; Li Ting; Cao Fei; Shao Lei; Chen Yu-Xian

2012-01-01

A junction barrier Schottky (JBS) rectifier with an improved P-well on 4H—SiC is proposed to improve the V F —I R trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10 −8 times that of the common JBS rectifier at no expense of the forward voltage drop. This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P + grid, resulting in a lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV, that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier, the figure of merit (FOM) of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge (ESD) in the human body model (HBM) circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier. (interdisciplinary physics and related areas of science and technology)

Laser diode package with enhanced cooling

Science.gov (United States)

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2011-09-13

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application

International Nuclear Information System (INIS)

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Osman, Mohd Nizam

2011-01-01

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

Energy Technology Data Exchange (ETDEWEB)

Guan-Hung Shen [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

2014-11-03

A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10{sup −4} A at − 20 V bias, a forward current of 7.2 × 10{sup −3} A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated.

Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

International Nuclear Information System (INIS)

Guan-Hung Shen; Hong, Franklin Chau-Nan

2014-01-01

A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10 −4 A at − 20 V bias, a forward current of 7.2 × 10 −3 A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated

Rectifier Filters

Directory of Open Access Journals (Sweden)

Y. A. Bladyko

2010-01-01

Full Text Available The paper contains definition of a smoothing factor which is suitable for any rectifier filter. The formulae of complex smoothing factors have been developed for simple and complex passive filters. The paper shows conditions for application of calculation formulae and filters. 

Simulation of rectifier voltage malfunction on OWECS, four-level converter, HVDC light link: Smart grid context tool

International Nuclear Information System (INIS)

Seixas, M.; Melício, R.; Mendes, V.M.F.

2015-01-01

Highlights: • Floating offshore wind turbine in deep water. • DC link and voltage malfunction. • Converter topology considered is four-level. • Controllers are based on fractional-order. • Smart grid context. - Abstract: This paper presents a model for the simulation of an offshore wind system having a rectifier input voltage malfunction at one phase. The offshore wind system model comprises a variable-speed wind turbine supported on a floating platform, equipped with a permanent magnet synchronous generator using full-power four-level neutral point clamped converter. The link from the offshore floating platform to the onshore electrical grid is done through a light high voltage direct current submarine cable. The drive train is modeled by a three-mass model. Considerations about the smart grid context are offered for the use of the model in such a context. The rectifier voltage malfunction domino effect is presented as a case study to show capabilities of the model

Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

KAUST Repository

Yao, Yingbang

2012-12-28

Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar or bipolar poling with various applied electric fields. The effects of polarization relaxation and fatigue on the currents were also investigated. We found that the conduction currents and the associated rectifications were controlled by the amplitude and direction of the polarization. We clearly observed the linear dependence of the current on the polarization. It is suggested that the space-charge-limited conduction and the charge injection at the Schottky interface between the film and the electrodes dominate the current. The electrically controlled rectifying behaviour observed in this study may be useful in nonvolatile resistance memory devices or tunable diodes. © 2013 IOP Publishing Ltd.

Fabrication and characterization of n-AlGaAs/ GaAs Schottky diode for rectennas device application

International Nuclear Information System (INIS)

Norfarariyanti Parimon; Abdul Manaf Hashim; Farahiyah Mustafa

2009-01-01

Full text: Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectennas device application. Rectennas is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current?voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectennas device application. (author)

Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

Energy Technology Data Exchange (ETDEWEB)

Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Osman, Mohd Nizam, E-mail: manaf@fke.utm.my [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

2011-02-15

Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

International Nuclear Information System (INIS)

Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul; Osman, Mohd Nizam

2011-01-01

Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

A Transformerless Hybrid Active Filter Capable of Complying with Harmonic Guidelines for Medium-Voltage Motor Drives

Science.gov (United States)

Kondo, Ryota; Akagi, Hirofumi

This paper presents a transformerless hybrid active filter that is integrated into medium-voltage adjustable-speed motor drives for fans, pumps, and compressors without regenerative braking. The authors have designed and constructed a three-phase experimental system rated at 400V and 15kW, which is a downscaled model from a feasible 6.6-kV 1-MW motor drive system. This system consists of the hybrid filter connecting a passive filter tuned to the 7th harmonic filter in series with an active filter that is based on a three-level diode-clamped PWM converter, as well as an adjustable-speed motor drive in which a diode rectifier is used as the front end. The hybrid filter is installed on the ac side of the diode rectifier with no line-frequency transformer. The downscaled system has been exclusively tested so as to confirm the overall compensating performance of the hybrid filter and the filtering performance of a switching-ripple filter for mitigating switching-ripple voltages produced by the active filter. Experimental results verify that the hybrid filter achieves harmonic compensation of the source current in all the operating regions from no-load to the rated-load conditions, and that the switching-ripple filter reduces the switching-ripple voltages as expected.

Countermeasures for electrolytic corrosion - Part II: Implementation of a rapid potential-controlled rectifier

Energy Technology Data Exchange (ETDEWEB)

Ha, Tae-Hyun; Kim, Dae-Kyeong; Lee, Hyun-Goo; Ha, Yoon-Cheol; Bae, Jeong-Hyo [Underground Systems Group, Korea Electrotechnology Research Institute, 28-1 Sungju-dong, Changwon, 641-120 (Korea)

2004-07-01

In electrolytic interference circumstances such as underground pipelines in the vicinity of DC electrified railroads, drainage method or impressed current cathodic protection method has been widely used as a countermeasure for the electrolytic corrosion. In the former method, forced or polarized drainage is commonly adopted and in the latter, the phase-controlled rectifier with thyristor is in common use. Both methods, however, does not show as the optimal measure for the integrity of the pipeline, since the pipe-to-soil potential fluctuates highly positive to the cathodic protection criterion. In particular, as the potential of the pipeline near the railroad varies rapidly, a new rapidly responding countermeasure is necessary. In this paper, we introduce a new rapid potential controlled rectifier and report the result in field tests. Comparison with the existing forced drainage method is also made. The pipe-to-soil potential data show the effectiveness of the rapid potential-controlled rectifier. (authors)

Characterization of diode valve in medium voltage dc/dc converter for wind turbines

DEFF Research Database (Denmark)

Dincan, Catalin Gabriel; Kjær, Philip Carne

2016-01-01

This paper proposes a methodology for characterization of medium voltage (MV), medium frequency (MF) rectifier diode valve. The intended application is for 10MW dc/dc converters used in DC offshore wind turbines. Sensitivity to semiconductor component parameter variation, snubber component tolera...... tolerance, influence of temperature and stray capacitance are analyzed. It is concluded that the largest impact on sensitivity is given by reverse recovery charge variation and differences of temperature between adjacent devices....

A boron nitride nanotube peapod thermal rectifier

International Nuclear Information System (INIS)

Loh, G. C.; Baillargeat, D.

2014-01-01

The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

A boron nitride nanotube peapod thermal rectifier

Energy Technology Data Exchange (ETDEWEB)

Loh, G. C., E-mail: jgloh@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Baillargeat, D. [CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553 (Singapore)

2014-06-28

The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

All solid-state diode pumped Nd:YAG MOPA with stimulated Brillouin phase conjugate mirror

NARCIS (Netherlands)

Offerhaus, Herman L.; Godfried, Herman; Godfried, H.P; Witteman, W.J.

1996-01-01

At the Nederlands Centrum voor Laser Research (NCLR) a 1 kHz diode-pumped Nd:YAG Master Oscillator Power Amplifier (MOPA) chain with a Stimulated Brillouin Scattering (SBS) Phase Conjugate mirror is designed and operated. A small Brewster angle Nd:YAG slab (2 by 2 by 20 mm) is side pumped with 200

Preparation and characterization of electrodeposited ZnO and ZnO:Co nanorod films for heterojunction diode applications

Energy Technology Data Exchange (ETDEWEB)

Caglar, Yasemin, E-mail: yasemincaglar@anadolu.edu.tr [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Arslan, Andaç [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Ilican, Saliha [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Hür, Evrim [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Aksoy, Seval; Caglar, Mujdat [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey)

2013-10-15

Highlights: •Undoped and Co-doped ZnO films were deposited on p-Si by electrodeposition method. •The effects of Co doping on some properties of ZnO films were investigated. •ZnO morphology was converted uniform multi-oriented rods with incorporation of Co. •Co-doped ZnO nanorod films showed a multi-oriented spear-like structure. -- Abstract: Well-aligned undoped and Co-doped nanorod ZnO films were grown by electrochemical deposition onto p-Si substrates from an aqueous route. Aqueous solution of Zn(NO{sub 3}){sub 2}⋅6H{sub 2}O and hexamethylenetetramine (HMT) were prepared using triple distilled water. Two different atomic ratios of Co(NO{sub 3}){sub 2}⋅6H{sub 2}O were used as a dopant element. Electrodepositions were carried out in a conventional three electrode cell for the working electrode (p-Si), reference electrode (Ag/AgCl, sat.) and counter electrode (platin wire). The effects of Co doping on the structural, morphological and electrical properties of ZnO films were investigated. X-ray diffraction (XRD) measurement showed that the undoped ZnO nanorod film was crystallized in the hexagonal wurtzite phase and presented a preferential orientation along the c-axis. Only one peak, corresponding to the (0 0 2) phase, appeared on the diffractograms. The lattice parameters and texture coefficient values were calculated. The nanorods were confirmed by the field emission scanning electron microscopy (FE-SEM) measurements. The FE-SEM image showed that the ZnO nanorods grow uniformly on the substrates, providing a surface with fairly homogeneous roughness. The surface morphology was transformed into uniform multi-oriented rods with incorporation of Co. Co-doped ZnO nanorod films showed a multi-oriented spear-like structure. The diffuse reflectance spectra of the films were measured and the optical band gap values were determined using Kubelka–Munk theory. The van der Pauw method was used to measure the sheet resistance of the films. The sheet resistance

Rectifier Fault Diagnosis and Fault Tolerance of a Doubly Fed Brushless Starter Generator

Directory of Open Access Journals (Sweden)

Liwei Shi

2015-01-01

Full Text Available This paper presents a rectifier fault diagnosis method with wavelet packet analysis to improve the fault tolerant four-phase doubly fed brushless starter generator (DFBLSG system reliability. The system components and fault tolerant principle of the high reliable DFBLSG are given. And the common fault of the rectifier is analyzed. The process of wavelet packet transforms fault detection/identification algorithm is introduced in detail. The fault tolerant performance and output voltage experiments were done to gather the energy characteristics with a voltage sensor. The signal is analyzed with 5-layer wavelet packets, and the energy eigenvalue of each frequency band is obtained. Meanwhile, the energy-eigenvalue tolerance was introduced to improve the diagnostic accuracy. With the wavelet packet fault diagnosis, the fault tolerant four-phase DFBLSG can detect the usual open-circuit fault and operate in the fault tolerant mode if there is a fault. The results indicate that the fault analysis techniques in this paper are accurate and effective.

A control strategy for induction motors fed from single phase supply

DEFF Research Database (Denmark)

Søndergård, Lars Møller

1993-01-01

It is often required that a three-phased asynchronous motor can run at variable speed, which makes it necessary to use a three-phase inverter driven from a DC-source. Today, most inverters are driven from the network using a simple diode bridge and an electrolytic capacitor. The problem with the ......It is often required that a three-phased asynchronous motor can run at variable speed, which makes it necessary to use a three-phase inverter driven from a DC-source. Today, most inverters are driven from the network using a simple diode bridge and an electrolytic capacitor. The problem...... with the simple diode bridge and the electrolytic capacitor is that current is only drawn for short periods, which gives rise to harmonic currents in the network. For small drive systems (motor+inverter), i.e. less than 1.5 kW, a single phase network outlet is often used. The author describes a method whereby...

Monte Carlo modelling of Schottky diode for rectenna simulation

Science.gov (United States)

Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

2017-09-01

Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

DEFF Research Database (Denmark)

Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Tidemand-Lichtenberg, Peter

2010-01-01

Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM00 power of 800 mW with 65% slope...... efficiency is obtained, the highest reported TEM00 power from any 946 nm Nd:YAG laser pumped by a single emitter diode laser pump source. A quantum efficiency of 0.85 has been estimated from experimental data using a simple quasi-three-level model. The reported value is in good agreement with published...

Application of static var compensator on large synchronous motors based on linear optimization control design

International Nuclear Information System (INIS)

Soltani, J.; Fath Abadi, A.M.

2003-01-01

This paper describes the application of static var compensators, on an electrical distribution network containing two large synchronous motors, one of which is excited via a three-phase thyristor bridge rectifier. The second machine is excited via a diode bridge rectifier. Based on linear optimization control, the measurable feedback signals are applied to the control system loops of static var compensators and the excitation control loop of the first synchronous motor. The phase equations method was used to develop a computer program to model the distribution network. Computer results were obtained to demonstrate the system performance for some abnormal modes of operation. These results show that employing static var compensators based on the linear optimization control design for electrical distribution networks containing large synchronous motors is beneficial and may be considered a first stage of the system design

Importance of thermal radiation from heat sink in cooling of three phase PWM inverter kept inside an evacuated chamber

Directory of Open Access Journals (Sweden)

Anjan Sarkar

2017-04-01

Full Text Available The paper describes a thermal analysis of a three-phase inverter operated under a Sinusoidal Pulse Width Modulation (SPWM technique which used three sine waves displaced in 120° phase difference as reference signals. The IGBT unit is assumed to be placed with a heat sink inside an evacuated chamber and the entire heat has to be transferred by conduction and radiation. The main heat sources present here are the set of IGBTs and diodes which generates heat on a pulse basing on their switching frequencies. Melcosim (a well-known tool developed by Mitsubishi Electric Corporation has been used to generate the power pulse from one set of IGBT and diode connected to a phase. A Scilab code is written to study the conduction and thermal radiation of heat sink and their combined effect on transient growth of the junction temperature of IGBT unit against complex switching pulses. The results mainly show that how thermal radiation from heat sink plays a crucial role in maintaining the junction temperature of IGBT within a threshold limit by adjusting various heat sink parameters. As the IGBT heat generation rate becomes higher, radiative heat transfer of the heat sink increases sharply which enhances overall cooling performance of the system.

Inkjet printing the three organic functional layers of two-colored organic light emitting diodes

International Nuclear Information System (INIS)

Coenen, Michiel J.J.; Slaats, Thijs M.W.L.; Eggenhuisen, Tamara M.; Groen, Pim

2015-01-01

Inkjet printing allows for the roll-2-roll fabrication of organic electronic devices at an industrial scale. In this paper we demonstrate the fabrication of two-colored organic light emitting diodes (OLEDs) in which three adjacent organic device layers were inkjet printed from halogen free inks. The resulting devices demonstrate the possibilities offered by this technique for the fabrication of OLEDs for signage and personalized electronics. - Highlights: • Two-colored organic light emitting diodes with 3 inkjet printed device layers were fabricated. • All materials were printed from halogen free inks. • Inkjet printing of emissive materials is suitable for signage applications

An Inductorless Self-Controlled Rectifier for Piezoelectric Energy Harvesting.

Science.gov (United States)

Lu, Shaohua; Boussaid, Farid

2015-11-19

This paper presents a high-efficiency inductorless self-controlled rectifier for piezoelectric energy harvesting. High efficiency is achieved by discharging the piezoelectric device (PD) capacitance each time the current produced by the PD changes polarity. This is achieved automatically without the use of delay lines, thereby making the proposed circuit compatible with any type of PD. In addition, the proposed rectifier alleviates the need for an inductor, making it suitable for on-chip integration. Reported experimental results show that the proposed rectifier can harvest up to 3.9 times more energy than a full wave bridge rectifier.

An Inductorless Self-Controlled Rectifier for Piezoelectric Energy Harvesting

Directory of Open Access Journals (Sweden)

Shaohua Lu

2015-11-01

Full Text Available This paper presents a high-efficiency inductorless self-controlled rectifier for piezoelectric energy harvesting. High efficiency is achieved by discharging the piezoelectric device (PD capacitance each time the current produced by the PD changes polarity. This is achieved automatically without the use of delay lines, thereby making the proposed circuit compatible with any type of PD. In addition, the proposed rectifier alleviates the need for an inductor, making it suitable for on-chip integration. Reported experimental results show that the proposed rectifier can harvest up to 3.9 times more energy than a full wave bridge rectifier.

Electrical transport measurements and degradation of graphene/n-Si Schottky junction diodes

International Nuclear Information System (INIS)

Park, No-Won; Lee, Won-Yong; Lee, Sang-Kwon; Koh, Jung-Hyuk; Kim, Dong-Joo; Kim, Gil-Sung; Hyung, Jung-Hwan; Hong, Chang-Hee; Kim, Keun-Soo

2015-01-01

We report on the electrical properties, such as the ideality factors and Schottky barrier heights, that were obtained by using current density - voltage (J - V ) and capacitance - voltage (C - V ) characteristics. To fabricate circularly- and locally-contacted Au/Gr/n-Si Schottky diode, we deposited graphene through the chemical vapor deposition (CVD) growth technique, and we employed reactive ion etching to reduce the leakage current of the Schottky diodes. The average values of the barrier heights and the ideality factors from the J .V characteristics were determined to be ∼0.79 ± 0.01 eV and ∼1.80 ± 0.01, respectively. The Schottky barrier height and the doping concentration from the C - V measurements were ∼0.85 eV and ∼1.76 x 10 15 cm -3 , respectively. From the J - V characteristics, we obtained a relatively low reverse leakage current of ∼2.56 x 10 -6 mA/cm -2 at -2 V, which implies a well-defined rectifying behavior. Finally, we found that the Gr/n-Si Schottky diodes that were exposed to ambient conditions for 7 days exhibited a ∼3.2-fold higher sheet resistance compared with the as-fabricated Gr/n-Si diodes, implying a considerable electrical degradation of the Gr/n-Si Schottky diodes.

ANALISA SISTEM KENDALI PUTARAN MOTOR DC MENGGUNAKAN SILICON CONTROLLED RECTIFIERS

Directory of Open Access Journals (Sweden)

M. Khairudin, Efendi, N Purwantiningsih,

2016-01-01

Full Text Available ABSTRAK Paper ini bertujuan untuk menganalisa rangkaian sistem kendali putaran motor menggunakan Silicon Controlled Rectifier (SCR atau Thyristor. Eksperimen sistem kendali putaran motor ini menggunakan dua rangkaian yang berbeda. Rangkaian pertama menggunakan dua sumber, yaitu sumber tegangan DC 12 v terhubung dengan motor universal secara seri dengan resistor dan SCR, sedangkan sumber tegangan DC variabel 0 sampai 1.5 v dihubung paralel dengan kapasitor dan resistor. Rangkaian kedua menggunakan satu sumber tegangan AC 5 v yang dihubungkan dengan saklar dan motor. Pada rangkaian kedua ini motor dihubungkan dengan potensio, SCR, dioda serta kapasitor yang dipasang paralel dengan sumber tegangan AC. Hasil eksperimen menunjukkan dalam rangkaian menggunakan sumber tegangan DC, motor DC akan berputar saat saklar S1 tertutup. Kondisi motor akan berputar lebih cepat ketika sumber tegangan variabel diatur lebih besar dari 0 v sehingga arus gate Ig lebih bear dari 400 mA. Adapun Eksperimen dengan sumber tegangan AC, motor akan berputar dengan menambahkan dioda D3 dan pengaturan kecepatan melalui potensio meter Rv sampai posisi maksimum. Kata kunci: analisa, motor DC, SCR, sistem kendali ABSTRACT The objective of this study is to analyse the circuit of DC motor control system using Silicon Controlled Rectifier (SCR or Thyristor. In this experiment the circuit of control system for the motor using two different circuits. The first circuit using two sources, the 12 v DC voltage is connected to universal motor and series with a resistor and SCR, while the DC variable voltage source of 0 to 1.5 v connected in parallel to the capacitor and resistor. The second circuit uses a single source of 5 V AC voltage connected to the switch and the motor. In the second circuit, the motor is connected to the potentio meter, SCR, diode and capacitor in parallel with the AC voltage source. The experimental results showed the circuit using a DC voltage source impacted the

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Directory of Open Access Journals (Sweden)

Moonsang Lee

2018-06-01

Full Text Available We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

Suppressing self-induced frequency scanning of a phase conjugate diode laser array with using counterbalance dispersion

DEFF Research Database (Denmark)

Løbel, M.; Petersen, P.M.; Johansen, P.M.

1998-01-01

Experimental results show that angular dispersion strongly influences the self-induced frequency scanning of a multimode broad-area diode laser array coupled to a photorefractive self-pumped phase conjugate mirror. Prisms or a dispersive grating placed in the external cavity opposing the material...

Design Criteria for DC Link Filters in a Synchronous Generator-Phase Controlled Rectifier-Filter-Load System

National Research Council Canada - National Science Library

Greseth, Gregory

1999-01-01

.... The proposed Navy DC Zonal Electrical Distribution System (DC ZEDS) being designed for the new DD-21 utilizes a rectified ac generator output which is filtered and stepped to usable voltages by local dc-dc converters...

A unified triangle carrier based PWM strategy for three-phase N-level diode clamped inverters

DEFF Research Database (Denmark)

Li, Kai; Xie, Chuan; Wei, Min

2017-01-01

The triangle carrier based pulse width modulation (TCB-PWM) can be functionally equivalent to space vector base PWM (SVB-PWM). For multi-level inverter, it is very difficult to realize the SVB-PWM because its vector space is very complex. In this paper, a unified TCB-PWM strategy for three-phase ...

Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

Science.gov (United States)

Wu, Chia-Ching; Yang, Cheng-Fu

2013-06-12

P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.

Three-Dimensional Computed Tomography as a Method for Finding Die Attach Voids in Diodes

Science.gov (United States)

Brahm, E. N.; Rolin, T. D.

2010-01-01

NASA analyzes electrical, electronic, and electromechanical (EEE) parts used in space vehicles to understand failure modes of these components. The diode is an EEE part critical to NASA missions that can fail due to excessive voiding in the die attach. Metallography, one established method for studying the die attach, is a time-intensive, destructive, and equivocal process whereby mechanical grinding of the diodes is performed to reveal voiding in the die attach. Problems such as die attach pull-out tend to complicate results and can lead to erroneous conclusions. The objective of this study is to determine if three-dimensional computed tomography (3DCT), a nondestructive technique, is a viable alternative to metallography for detecting die attach voiding. The die attach voiding in two- dimensional planes created from 3DCT scans was compared to several physical cross sections of the same diode to determine if the 3DCT scan accurately recreates die attach volumetric variability

Laserlike Vibrational Instability in Rectifying Molecular Conductors

DEFF Research Database (Denmark)

Lu, Jing Tao; Hedegård, Per; Brandbyge, Mads

2011-01-01

We study the damping of molecular vibrations due to electron-hole pair excitations in donor-acceptor (D-A) type molecular rectifiers. At finite voltage additional nonequilibrium electron-hole pair excitations involving both electrodes become possible, and contribute to the stimulated emission....... We investigate the effect in realistic molecular rectifier structures using first-principles calculations....

Extremal vectors and rectifiability | Enflo | Quaestiones Mathematicae

African Journals Online (AJOL)

Extremal vectors and rectifiability. ... The concept of extremal vectors of a linear operator with a dense range but not onto on a Hilbert space was introduced by P. Enflo in 1996 as a new approach to study invariant subspaces ... We show that in general curves that map numbers to backward minimal vectors are not rectifiable.

Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

International Nuclear Information System (INIS)

Tyagi, Manisha; Tomar, Monika; Gupta, Vinay

2015-01-01

Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10 4 at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements

Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles

Science.gov (United States)

Gourash, F.

1984-01-01

The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles

Science.gov (United States)

Gourash, F.

1984-02-01

The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

Fabrication of a Schottky junction diode with direct growth graphene on silicon by a solid phase reaction

International Nuclear Information System (INIS)

Kalita, Golap; Hirano, Ryo; Ayhan, Muhammed E; Tanemura, Masaki

2013-01-01

We demonstrate fabrication of a Schottky junction diode with direct growth graphene on n-Si by the solid phase reaction approach. Metal-assisted crystallization of a-C thin film was performed to synthesize transfer-free graphene directly on a SiO 2 patterned n-Si substrate. Graphene formation at the substrate and catalyst layer interface is achieved in presence of a Co catalytic and CoO carbon diffusion barrier layer. The as-synthesized material shows a linear current–voltage characteristic confirming the metallic behaviour of the graphene structure. The direct grown graphene on n-Si substrate creates a Schottky junction with a potential barrier of 0.44 eV and rectification diode characteristic. Our finding shows that the directly synthesized graphene on Si substrate by a solid phase reaction process can be a promising technique to fabricate an efficient Schottky junction device. (paper)

Upgrading the power supplies of TEXTOR for three Tesla operation

International Nuclear Information System (INIS)

Giesen, B.; Veiders, E.; Petree, F.; Fink, R.; Wagnitz, R.

1986-01-01

The toroidal magnetic system of TEXTOR can tolerate a magnetic field load of up to 2.6 Tesla routinely at full plasma current, and of up to 3 Tesla under certain boundary conditions and for a restricted number of discharges. The original power supply which can generate a toroidal magnetic field of 2 Tesla has been upgraded to operate at a field strength of 3 Tesla, by adding a new, controlled rectifier, with its own independent control, connected in parallel with the first. Studies were undertaken to determine its behaviour where control is lost, such as when a circuit breaker trips or in ''freewheel'' operation. This paper analyzes this asymmetrical arrangement and discusses the danger of damaging the smaller unit by commutating a large current into it. Moreover, in order to improve the availability of TEXTOR, the new controlled rectifier is redundant to two other units that control the vertical field and the ohmic heating coil currents. For this purpose the two bridges of this 12-pulse system are to be changed from a parallel to a series connexion, the free-wheeling diodes are disconnected and redeployed to block the large voltage pulses that are induced at plasma initiation, and 3-phase ''freewheeling'' thyristors are added that serve to reduce reactive power consumption

Noter om tyristorforstærkere

DEFF Research Database (Denmark)

Bucka-Christensen, E. Thomas

1996-01-01

Introduction to controlled rectifiers and basic design rules of three-phase rectifiers including the mains transformer.......Introduction to controlled rectifiers and basic design rules of three-phase rectifiers including the mains transformer....

Photoperiod Modulates Fast Delayed Rectifier Potassium Currents in the Mammalian Circadian Clock.

Science.gov (United States)

Farajnia, Sahar; Meijer, Johanna H; Michel, Stephan

2016-10-01

One feature of the mammalian circadian clock, situated in the suprachiasmatic nucleus (SCN), is its ability to measure day length and thereby contribute to the seasonal adaptation of physiology and behavior. The timing signal from the SCN, namely the 24 hr pattern of electrical activity, is adjusted according to the photoperiod being broader in long days and narrower in short days. Vasoactive intestinal peptide and gamma-aminobutyric acid play a crucial role in intercellular communication within the SCN and contribute to the seasonal changes in phase distribution. However, little is known about the underlying ionic mechanisms of synchronization. The present study was aimed to identify cellular mechanisms involved in seasonal encoding by the SCN. Mice were adapted to long-day (light-dark 16:8) and short-day (light-dark 8:16) photoperiods and membrane properties as well as K + currents activity of SCN neurons were measured using patch-clamp recordings in acute slices. Remarkably, we found evidence for a photoperiodic effect on the fast delayed rectifier K + current, that is, the circadian modulation of this ion channel's activation reversed in long days resulting in 50% higher peak values during the night compared with the unaltered day values. Consistent with fast delayed rectifier enhancement, duration of action potentials during the night was shortened and afterhyperpolarization potentials increased in amplitude and duration. The slow delayed rectifier, transient K + currents, and membrane excitability were not affected by photoperiod. We conclude that photoperiod can change intrinsic ion channel properties of the SCN neurons, which may influence cellular communication and contribute to photoperiodic phase adjustment. © The Author(s) 2016.

Photoperiod Modulates Fast Delayed Rectifier Potassium Currents in the Mammalian Circadian Clock

Directory of Open Access Journals (Sweden)

Sahar Farajnia

2016-09-01

Full Text Available One feature of the mammalian circadian clock, situated in the suprachiasmatic nucleus (SCN, is its ability to measure day length and thereby contribute to the seasonal adaptation of physiology and behavior. The timing signal from the SCN, namely the 24 hr pattern of electrical activity, is adjusted according to the photoperiod being broader in long days and narrower in short days. Vasoactive intestinal peptide and gamma-aminobutyric acid play a crucial role in intercellular communication within the SCN and contribute to the seasonal changes in phase distribution. However, little is known about the underlying ionic mechanisms of synchronization. The present study was aimed to identify cellular mechanisms involved in seasonal encoding by the SCN. Mice were adapted to long-day (light–dark 16:8 and short-day (light–dark 8:16 photoperiods and membrane properties as well as K+ currents activity of SCN neurons were measured using patch-clamp recordings in acute slices. Remarkably, we found evidence for a photoperiodic effect on the fast delayed rectifier K+ current, that is, the circadian modulation of this ion channel’s activation reversed in long days resulting in 50% higher peak values during the night compared with the unaltered day values. Consistent with fast delayed rectifier enhancement, duration of action potentials during the night was shortened and afterhyperpolarization potentials increased in amplitude and duration. The slow delayed rectifier, transient K+ currents, and membrane excitability were not affected by photoperiod. We conclude that photoperiod can change intrinsic ion channel properties of the SCN neurons, which may influence cellular communication and contribute to photoperiodic phase adjustment.

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

Science.gov (United States)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

Three-phase hollow-fiber liquid-phase microextraction combined with HPLC-UV for the determination of isothiazolinone biocides in adhesives used for food packaging materials.

Science.gov (United States)

Rosero-Moreano, Milton; Canellas, Elena; Nerín, Cristina

2014-02-01

The present study deals with the development of a liquid microextraction procedure for enhancing the sensitivity of the determination of 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one in adhesives. The procedure involves a three-phase hollow-fiber liquid-phase microextraction using a semipermeable polypropylene membrane, which contained 1-octanol as the organic phase in the pores of the membrane. The donor and acceptor phases are aqueous acidic and alkaline media, respectively, and the final liquid phase (acceptor) is analyzed by HPLC coupled with diode array detection. The most appropriate conditions were extraction time 20 min, stirring speed 1400 rpm, extraction temperature 50°C. The quantification limits of the method were 0.123 and 0.490 μg/g for 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one, respectively. Three different adhesive samples were successfully analyzed. The procedure was compared to direct analysis using ultra high pressure liquid chromatography coupled with TOF-MS, where the identification of the compounds and the quantification values were confirmed. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nano Antenna Integrated Diode (Rectenna) For Infrared Energy Harvesting

KAUST Repository

Gadalla, Mena N.

2013-01-01

In this work full parametric analysis of nano antennas is presented. To begin with, optical or electronic properties of noble metals such as gold and copper were studied in details to get a clear understanding of their reaction to an incident electromagnetic wave. Complex frequency dependent dielectric functions indicated that in THz metals acts as a dielectric with significant absorption. Simultaneous optimization of the length and the bow angle of a bow-tie antenna resulted in relative electric field intensity enhancement of 8 orders of magnitude for 0.5nm gap and 4 orders of magnitude for 50nm around 28THz resonance frequency. These results are at least 2 orders of magnitude greater than the published optical antennas. Physical reasons behind field localization and intensity enhancement  are  discussed  in  details.  The  solution  of  Maxwell’s  equations  at   the  interface   between metallic nano antenna and air is also present in this piece of research. The derived dispersion relation of surface plasmons shows momentum matching at 28.3 THz between free propagating electromagnetic fields’ modes in air and localized modes at the interface. Consequently, Propagating electromagnetic waves are ensured to couple to localized surface propagating modes producing filed enhancement. The integrated matching section is theoretically proven to increase transmission to substrate to 75% (compared to 40% without it) which in turn improves the coupled power by 40 times. Nano antennas were fabricated in house using Electron beam lithography with a precise gap of 50nm. In addition, THz diode was designed, fabricated and integrated to the nano antennas to rectify the enhanced THz signal. The integration of the nano diode required a precise overlap of the two arms of the antenna in the rage of 100nm. In order to overcome two arms overlap fabrication challenges, three layer alignment technique was used to produce precise overlap.The THz rectifier was

Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

DEFF Research Database (Denmark)

Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

2018-01-01

A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER

Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

Directory of Open Access Journals (Sweden)

Kaleem Abbas

2018-03-01

Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.

Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Science.gov (United States)

Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

2015-07-01

The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

Precision rectifier detectors for ac resistance bridge measurements with application to temperature control systems for irradiation creep experiments

Energy Technology Data Exchange (ETDEWEB)

Duncan, M. G.

1977-05-01

The suitability of several temperature measurement schemes for an irradiation creep experiment is examined. It is found that the specimen resistance can be used to measure and control the sample temperature if compensated for resistance drift due to radiation and annealing effects. A modified Kelvin bridge is presented that allows compensation for resistance drift by periodically checking the sample resistance at a controlled ambient temperature. A new phase-insensitive method for detecting the bridge error signals is presented. The phase-insensitive detector is formed by averaging the magnitude of two bridge voltages. Although this method is substantially less sensitive to stray reactances in the bridge than conventional phase-sensitive detectors, it is sensitive to gain stability and linearity of the rectifier circuits. Accuracy limitations of rectifier circuits are examined both theoretically and experimentally in great detail. Both hand analyses and computer simulations of rectifier errors are presented. Finally, the design of a temperature control system based on sample resistance measurement is presented. The prototype is shown to control a 316 stainless steel sample to within a 0.15/sup 0/C short term (10 sec) and a 0.03/sup 0/C long term (10 min) standard deviation at temperatures between 150 and 700/sup 0/C. The phase-insensitive detector typically contributes less than 10 ppM peak resistance measurement error (0.04/sup 0/C at 700/sup 0/C for 316 stainless steel or 0.005/sup 0/C at 150/sup 0/C for zirconium).

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

International Nuclear Information System (INIS)

Wang Ying; Jiao Wen-Li; Hu Hai-Fan; Liu Yun-Tao; Cao Fei

2012-01-01

An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 mΩ·mm 2 and 6.5 mΩ·mm 2 for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET. (condensed matter: structural, mechanical, and thermal properties)

Self-Biased Differential Rectifier with Enhanced Dynamic Range for Wireless Powering

KAUST Repository

Ouda, Mahmoud H.

2016-08-29

A self-biased, cross-coupled, differential rectifier is proposed with enhanced power-conversion efficiency over an extended range of input power. A prototype is designed for UHF 433MHz RF power-harvesting applications and is implemented using 0.18μm CMOS technology. The proposed rectifier architecture is compared to the conventional cross-coupled rectifier. It demonstrates an improvement of more than 40% in the rectifier power conversion efficiency (PCE) and an input power range extension of more than 50% relative to the conventional crosscoupled rectifier. A sensitivity of -15.2dBm (30μW) input power for 1V output voltage and a peak power-conversion efficiency of 65% are achieved for a 50kω load. © 2004-2012 IEEE.

Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Manisha [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Physics department, Miranda House, University of Delhi, Delhi-110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2015-06-15

Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10{sup 4} at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements.

A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

International Nuclear Information System (INIS)

Hazra, Purnima; Jit, S.

2014-01-01

This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

A passive UHF RFID tag with a dynamic-Vth-cancellation rectifier

International Nuclear Information System (INIS)

Shen Jinpeng; Wang Bo; Liu Shan; Wang Xin'an; Ruan Zhengkun; Li Shoucheng

2013-01-01

This paper presents a passive UHF RFID tag with a dynamic-V th -cancellation (DVC) rectifier. In the rectifier, the threshold voltages of MOSFETs are cancelled by applying gate bias voltages, which are dynamically changed according to the states of the MOSFETs. The DVC rectifier enables both low ON-resistance and small reverse leakage of the MOSFETs, resulting in high power conversion efficiency (PCE). An area-efficient demodulator with a novel average detector is also designed, which takes advantage of the rectifier's first stage as the envelope detector. The whole tag chip is implemented in a 0.18 μm CMOS process with a die size of 880 × 950 μm 2 . Measurement results show that the rectifier achieves a maximum PCE of 53.7% with 80 kΩ resistor load. (semiconductor integrated circuits)

Application data for the PLT stabilizing field rectifier

International Nuclear Information System (INIS)

Bronner, G.; Murray, J.G.; Oliaro, G.E.

1975-11-01

This paper describes the 12-pulse stabilizing field rectifier used for vertical field production in the Princeton Large Torus (PLT). It is essential that the rectifier be reliable, and protect itself from all faults including induced transient overvoltage produced by switching and plasma instabilities. To this end, computer simulations were run to insure protection under various fault conditions

Diode-like behavior of I–V curves of CoFe–(Al–O)/Si(100) granular thin films

Energy Technology Data Exchange (ETDEWEB)

Tuan Anh, Nguyen [ITIMS, Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam); Hanoi Community College (HCC), Trung Kinh, Cau giay, Hanoi 10000 (Viet Nam); Van Cuong, Giap [ITIMS, Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam); HungYen University of Technology and Education (UTEHY), Khoai chau, Hung Yen 39000 (Viet Nam); Anh Tuan, Nguyen, E-mail: tuanna@itims.edu.vn [ITIMS, Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam)

2015-01-15

In this study, the electrical performance of (Co{sub 70}Fe{sub 30}){sub x}(Al–O){sub 1−x} (where x=0.1 and 0.3) granular thin films sputtered on Si(1 0 0) substrates, which were subsequently annealing at 350 °C for 1 h in vacuum, was investigated. The millimeter-sized samples were installed in an in-plane lateral Ag electrode configuration on the surface. The current–voltage (I–V) characteristics were measured in bias voltages of approximately ±7 V. The I–V curves demonstrated the so-called large Coulomb gaps and diode-like asymmetric behavior similar to a Zener diode-type rectification. This remarkable behavior was evaluated using the most suitable transport models. Results suggest that an effective magnetic diode could be fabricated from millimeter-sized magnetic granular thin films. - Highlights: • The granular MTJ systems can induce a strong collective Coulomb blockage effect. • Isolated magnetic nanoparticles can form asymmetric nano-double barrier MTJ chains. • Discrete system can induce diode-like rectification as a molecular electronic rectifier. • Irreversible cotunneling through nano-double barrier MTJ chains yields rectification. • Magnetic tunnel diodes can be created simply from the granular MTJ-type thin films.

Ultra-fast quantum randomness generation by accelerated phase diffusion in a pulsed laser diode.

Science.gov (United States)

Abellán, C; Amaya, W; Jofre, M; Curty, M; Acín, A; Capmany, J; Pruneri, V; Mitchell, M W

2014-01-27

We demonstrate a high bit-rate quantum random number generator by interferometric detection of phase diffusion in a gain-switched DFB laser diode. Gain switching at few-GHz frequencies produces a train of bright pulses with nearly equal amplitudes and random phases. An unbalanced Mach-Zehnder interferometer is used to interfere subsequent pulses and thereby generate strong random-amplitude pulses, which are detected and digitized to produce a high-rate random bit string. Using established models of semiconductor laser field dynamics, we predict a regime of high visibility interference and nearly complete vacuum-fluctuation-induced phase diffusion between pulses. These are confirmed by measurement of pulse power statistics at the output of the interferometer. Using a 5.825 GHz excitation rate and 14-bit digitization, we observe 43 Gbps quantum randomness generation.

Electrospun conducting polymer nanofibers as the active material in sensors and diodes

International Nuclear Information System (INIS)

Pinto, Nicholas J

2013-01-01

Polyaniline doped with camphorsulfonic acid (PANi-HCSA) and poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonic acid (PEDOT-PSSA) were electrospun separately to obtain individual nanofibers which were captured on Si/SiO 2 substrates and electrically characterized. The fiber resistance was recorded as a function of time in the presence of vapours of aliphatic alcohols of varying sizes. Due to the large surface to volume ratio, uniform diameter and small quantity of active material used in the construction, these sensor responses are very quick. Sensors made from individual fibers also show true saturation upon exposure to and removal of the sensing gas. A Schottky diode was also fabricated using an n-doped Si/SiO 2 substrate and a single PANi-HCSA fiber and tested in vacuum and in ammonia gas. The diode response was instantaneous upon exposure to ammonia with nearly complete recovery of the current upon pumping out the ammonia, thereby making it a reusable sensor with rectifying behaviour i.e. multifunctional.

Voltage-Sharing Converter to Supply Single-Phase Asymmetrical Four-Level Diode-Clamped Inverter With High Power Factor Loads

DEFF Research Database (Denmark)

Boora, Arash A.; Nami, Alireza; Zare, Firuz

2010-01-01

The output voltage quality of some of the single-phase multilevel inverters can be improved when their dc-link voltages are regulated asymmetrically. Symmetrical and asymmetrical multilevel diode-clamped inverters have the problem of dc-link capacitor voltage balancing, especially when power factor...... that the proposed combination of introduced multioutput dc–dc converter and single-phase ADCI is a good candidate for power conversion in residential photovoltaic (PV) utilization....

Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes

International Nuclear Information System (INIS)

Yang, Yanqin; Li, Songzhan; Liu, Feng; Zhang, Nangang; Liu, Kan; Wang, Shengxiang; Fang, Guojia

2017-01-01

Light-emitting diodes based on p-SnO 2 /i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO 2 /i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

Transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/Al-ZnO p-n heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sunil, E-mail: skbgudha@gmail.com; Ansari, Mohd Zubair; Khare, Neeraj [Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, Delhi-110016 (India)

2016-05-23

A p-type Organic inorganic tin chloride (CH{sub 3}NH{sub 3}SnCl{sub 3}) perovskite thin film has been synthesized by solution method. An n-type 1% Al doped ZnO (AZO) film has been deposited on FTO substrate by ultrasonic assisted chemical vapor deposition technique. A transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction diode has been fabricated by spin coating technique. CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows 75% transparency in the visible region. I-V characteristic of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows rectifying behavior of the diode. The diode parameters calculated as ideality factor η=2.754 and barrier height Φ= 0.76 eV. The result demonstrates the potentiality of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction for transparent electronics.

A concentration-independent micro/nanofluidic active diode using an asymmetric ion concentration polarization layer.

Science.gov (United States)

Lee, Hyekyung; Kim, Junsuk; Kim, Hyeonsoo; Kim, Ho-Young; Lee, Hyomin; Kim, Sung Jae

2017-08-24

Over the past decade, nanofluidic diodes that rectify ionic currents (i.e. greater current in one direction than in the opposite direction) have drawn significant attention in biomolecular sensing, switching and energy harvesting devices. To obtain current rectification, conventional nanofluidic diodes have utilized complex nanoscale asymmetry such as nanochannel geometry, surface charge density, and reservoir concentration. Avoiding the use of sophisticated nano-asymmetry, micro/nanofluidic diodes using microscale asymmetry have been recently introduced; however, their diodic performance is still impeded by (i) low (even absent) rectification effects at physiological concentrations over 100 mM and strong dependency on the bulk concentration, and (ii) the fact that they possess only passive predefined rectification factors. Here, we demonstrated a new class of micro/nanofluidic diode with an ideal perm-selective nanoporous membrane based on ion concentration polarization (ICP) phenomenon. Thin side-microchannels installed near a nanojunction served as mitigators of the amplified electrokinetic flows generated by ICP and induced convective salt transfer to the nanoporous membrane, leading to actively controlled micro-scale asymmetry. Using this device, current rectifications were successfully demonstrated in a wide range of electrolytic concentrations (10 -5 M to 3 M) as a function of the fluidic resistance of the side-microchannels. Noteworthily, it was confirmed that the rectification factors were independent from the bulk concentration due to the ideal perm-selectivity. Moreover, the rectification of the presenting diode was actively controlled by adjusting the external convective flows, while that of the previous diode was passively determined by invariant nanoscale asymmetry.

Sensitive determination of three aconitum alkaloids and their metabolites in human plasma by matrix solid-phase dispersion with vortex-assisted dispersive liquid-liquid microextraction and HPLC with diode array detection.

Science.gov (United States)

Wang, Xiaozhong; Li, Xuwen; Li, Lanjie; Li, Min; Liu, Ying; Wu, Qian; Li, Peng; Jin, Yongri

2016-05-01

A simple and sensitive method for determination of three aconitum alkaloids and their metabolites in human plasma was developed using matrix solid-phase dispersion combined with vortex-assisted dispersive liquid-liquid microextraction and high-performance liquid chromatography with diode array detection. The plasma sample was directly purified by matrix solid-phase dispersion and the eluate obtained was concentrated and further clarified by vortex-assisted dispersive liquid-liquid microextraction. Some important parameters affecting the extraction efficiency, such as type and amount of dispersing sorbent, type and volume of elution solvent, type and volume of extraction solvent, salt concentration as well as sample solution pH, were investigated in detail. Under optimal conditions, the proposed method has good repeatability and reproducibility with intraday and interday relative standard deviations lower than 5.44 and 5.75%, respectively. The recoveries of the aconitum alkaloids ranged from 73.81 to 101.82%, and the detection limits were achieved within the range of 1.6-2.1 ng/mL. The proposed method offered the advantages of good applicability, sensitivity, simplicity, and feasibility, which makes it suitable for the determination of trace amounts of aconitum alkaloids in human plasma samples. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of Op-Amp Based Piezoelectric Rectifier for Low Power Energy Harvesting Applications

Directory of Open Access Journals (Sweden)

Syazmie Bin Sepeeh Muhamad

2018-01-01

Full Text Available In this study, the development of operational amplifier (op-amp based rectifier for piezoelectric energy harvesting applications was studied. The two stage op-amp full wave rectifier was used to convert the AC signal to DC signal voltage received by piezoelectric devices. The inverted half wave rectifier integrated with full wave rectifier were designed and simulated using MultiSIM software. The circuit was then fabricated onto a printed circuit board (PCB, using standard fabrication process. The achievement of this rectifier was able to boost up the maximum voltage of 5 V for input voltage of 800 mV. The output of the rectifier was in DC signal after the rectification by the op-amp. In term of power, the power dissipation was reduced consequently the waste power decreases. Future work includes optimization of the rectifying circuit to operate more efficiently can be made to increase the efficiency of the devices.

Rectification of electronic heat current by a hybrid thermal diode.

Science.gov (United States)

Martínez-Pérez, Maria José; Fornieri, Antonio; Giazotto, Francesco

2015-04-01

Thermal diodes--devices that allow heat to flow preferentially in one direction--are one of the key tools for the implementation of solid-state thermal circuits. These would find application in many fields of nanoscience, including cooling, energy harvesting, thermal isolation, radiation detection and quantum information, or in emerging fields such as phononics and coherent caloritronics. However, both in terms of phononic and electronic heat conduction (the latter being the focus of this work), their experimental realization remains very challenging. A highly efficient thermal diode should provide a difference of at least one order of magnitude between the heat current transmitted in the forward temperature (T) bias configuration (Jfw) and that generated with T-bias reversal (Jrev), leading to ℛ = Jfw/Jrev ≫ 1 or ≪ 1. So far, ℛ ≈ 1.07-1.4 has been reported in phononic devices, and ℛ ≈ 1.1 has been obtained with a quantum-dot electronic thermal rectifier at cryogenic temperatures. Here, we show that unprecedentedly high ratios of ℛ ≈ 140 can be achieved in a hybrid device combining normal metals tunnel-coupled to superconductors. Our approach provides a high-performance realization of a thermal diode for electronic heat current that could be successfully implemented in true low-temperature solid-state thermal circuits.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

International Nuclear Information System (INIS)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M.; Koeck, Franz A. M.; Nemanich, Robert J.

2016-01-01

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco ® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Science.gov (United States)

Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

2016-06-01

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Energy Technology Data Exchange (ETDEWEB)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M. [Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806 (United States); Koeck, Franz A. M.; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-8806 (United States)

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

Bidirectional electroluminescence from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Yang, Yanqin [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Li, Songzhan, E-mail: liszhan@whu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Liu, Feng; Zhang, Nangang; Liu, Kan [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Wang, Shengxiang, E-mail: sxwang@wtu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Fang, Guojia [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

2017-06-15

Light-emitting diodes based on p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

Three Dimensional Speckle Imaging Employing a Frequency-Locked Tunable Diode Laser

Energy Technology Data Exchange (ETDEWEB)

Cannon, Bret D.; Bernacki, Bruce E.; Schiffern, John T.; Mendoza, Albert

2015-09-01

We describe a high accuracy frequency stepping method for a tunable diode laser to improve a three dimensional (3D) imaging approach based upon interferometric speckle imaging. The approach, modeled after Takeda, exploits tuning an illumination laser in frequency as speckle interferograms of the object (specklegrams) are acquired at each frequency in a Michelson interferometer. The resulting 3D hypercube of specklegrams encode spatial information in the x-y plane of each image with laser tuning arrayed along its z-axis. We present laboratory data of before and after results showing enhanced 3D imaging resulting from precise laser frequency control.

Inhibition of the cardiac inward rectifier potassium currents by KB-R7943.

Science.gov (United States)

Abramochkin, Denis V; Alekseeva, Eugenia I; Vornanen, Matti

2013-09-01

KB-R7943 (2-[2-[4-(4-nitrobenzyloxy)phenyl]ethyl]isothiourea) was developed as a specific inhibitor of the sarcolemmal sodium-calcium exchanger (NCX) with potential experimental and therapeutic use. However, KB-R7943 is shown to be a potent blocker of several ion currents including inward and delayed rectifier K(+) currents of cardiomyocytes. To further characterize KB-R7943 as a blocker of the cardiac inward rectifiers we compared KB-R7943 sensitivity of the background inward rectifier (IK1) and the carbacholine-induced inward rectifier (IKACh) currents in mammalian (Rattus norvegicus; rat) and fish (Carassius carassius; crucian carp) cardiac myocytes. The basal IK1 of ventricular myocytes was blocked with apparent IC50-values of 4.6×10(-6) M and 3.5×10(-6) M for rat and fish, respectively. IKACh was almost an order of magnitude more sensitive to KB-R7943 than IK1 with IC50-values of 6.2×10(-7) M for rat and 2.5×10(-7) M for fish. The fish cardiac NCX current was half-maximally blocked at the concentration of 1.9-3×10(-6) M in both forward and reversed mode of operation. Thus, the sensitivity of three cardiac currents to KB-R7943 block increases in the order IK1~INCXrectifier potassium currents, in particular IKACh, should be taken into account when interpreting the data with this inhibitor from in vivo and in vitro experiments in both mammalian and fish models. © 2013.

Single Phase Passive Rectification Versus Active Rectification Applied to High Power Stirling Engines

Science.gov (United States)

Santiago, Walter; Birchenough, Arthur G.

2006-01-01

Stirling engine converters are being considered as potential candidates for high power energy conversion systems required by future NASA explorations missions. These types of engines typically contain two major moving parts, the displacer and the piston, in which a linear alternator is attached to the piston to produce a single phase sinusoidal waveform at a specific electric frequency. Since all Stirling engines perform at low electrical frequencies (less or equal to 100 Hz), space explorations missions that will employ these engines will be required to use DC power management and distribution (PMAD) system instead of an AC PMAD system to save on space and weight. Therefore, to supply such DC power an AC to DC converter is connected to the Stirling engine. There are two types of AC to DC converters that can be employed, a passive full bridge diode rectifier and an active switching full bridge rectifier. Due to the inherent line inductance of the Stirling Engine-Linear Alternator (SE-LA), their sinusoidal voltage and current will be phase shifted producing a power factor below 1. In order to keep power the factor close to unity, both AC to DC converters topologies will implement power factor correction. This paper discusses these power factor correction methods as well as their impact on overall mass for exploration applications. Simulation results on both AC to DC converters topologies with power factor correction as a function of output power and SE-LA line inductance impedance are presented and compared.

Study of the power supply topology with high stability for accelerator

International Nuclear Information System (INIS)

Wu Wei; Wang Yunfang; Wang Jiewei

2005-01-01

The requirements of the power supply for accelerator are analyzed. A few of topologies of the highly stabilized power supply are discussed. The types are listed: Auto-transformers-diode rectifier-transistor regulating current. Thyristor rectifier regulating voltage -transistor regulating current, Diode rectifier -DC-chopping. Thyristor rectifier regulating voltage -two-quadrant-chopping. The advantages and disadvantages of the topologies for power supply are discussed. The notice questions of the power supply designed for accelerator are analyzed. (authors)

Modelling and Simulation of Single-Phase Series Active Compensator for Power Quality Improvement

Science.gov (United States)

Verma, Arun Kumar; Mathuria, Kirti; Singh, Bhim; Bhuvaneshwari, G.

2017-10-01

A single-phase active series compensator is proposed in this work to reduce harmonic currents at the ac mains and to regulate the dc link voltage of a diode bridge rectifier (DBR) that acts as the front end converter for a voltage source inverter feeding an ac motor. This ac motor drive is used in any of the domestic, commercial or industrial appliances. Under fluctuating ac mains voltages, the dc link voltage of the DBR depicts wide variations and hence the ac motor is used at reduced rating as compared to its name-plate rating. The active series compensator proposed here provides dual functions of improving the power quality at the ac mains and regulating the dc link voltage thus averting the need for derating of the ac motor.

Plasmas in saline solutions sustained using rectified ac voltages: polarity and frequency effects on the discharge behaviour

International Nuclear Information System (INIS)

Chang Hungwen; Hsu Chengche

2012-01-01

In this work, three major problems, namely severe electrode damage, poor plasma stability and excess power consumption, arising in ac-driven plasmas in saline solutions are solved using a rectified power source. Diagnostic studies on the effects of power source polarity and frequency on the plasma behaviour are performed. Examination of I-V characteristics and temporally resolved light emission shows that the polarity significantly influences the current amplitude when the plasma exists, while the frequency alters the bubble dynamics, which in turn affects the plasma ignition voltage. When the plasma is driven by a rectified ac power source, the electrode erosion is reduced substantially. With a low frequency, moderate applied voltage and positively rectified ac power source (e.g. 100 Hz and 350 V), a stable plasma is ignited in nearly every power cycle. (paper)

V-shaped resonators for addition of broad-area laser diode arrays

Science.gov (United States)

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Control system for a superconducting rectifier using a microcomputer

International Nuclear Information System (INIS)

ten Kate, H.H.J.; Kamphuis, D.A.; Caspari, M.; van de Klundert, L.J.M.; Houkes, Z.

1981-01-01

Within the scope of a research program of superconducting rectifiers software is being developed to take care of the control of such systems. The hardware architecture which interferes with the in and output signals is based on a LSI-11/2 microprocessor with sufficient mass storage for data logging, console and printer. The flexibility inherent to this hardware configuration is desired for optimization of the rectifier concerning maximum current, power, efficiency and quench stability. The paper describes the structure of the program and the interaction between both computer hardware and software and the superconducting rectifier. However, because the reliability of computer systems is unsatisfactory, an additional hardware protection system still handles the most important alarms. 2 refs

Three-Phase and Six-Phase AC at the Lab Bench

Science.gov (United States)

Caplan, George M.

2009-01-01

Utility companies generate three-phase electric power, which consists of three sinusoidal voltages with phase angles of 0 degrees, 120 degrees, and 240 degrees. The ac generators described in most introductory textbooks are single-phase generators, so physics students are not likely to learn about three-phase power. I have developed a simple way…

The energizing of a NMR superconducting coil by a superconducting rectifier

International Nuclear Information System (INIS)

Sikkenga, J.; ten Kate, H.H.J.; van der Klundert, L.J.M.; Knoben, J.; Kraaij, G.J.; Spuorenberg, C.J.G.

1985-01-01

NMR magnets require a good homogeneity within a certain volume and an excellent field stability. The homogeneity can be met using a superconducting shim coil system. The field stability requires a constant current, although in many cases the current decay time constant is too low, due to imperfections in the superconducting wire and joints. This can be overcome using a rectifier. The rectifier can also be used to load the coil. The combination and interaction of the superconducting NMR coil (2.0 Tesla and 0.35 m cold bore) and the rectifier (20 W / 1 kA) is tested. The safety of the system is discussed. The shim coil system can compensate the strayfield of the rectifier. The field decay compensation will be discussed

High-performance ionic diode membrane for salinity gradient power generation.

Science.gov (United States)

Gao, Jun; Guo, Wei; Feng, Dan; Wang, Huanting; Zhao, Dongyuan; Jiang, Lei

2014-09-03

Salinity difference between seawater and river water is a sustainable energy resource that catches eyes of the public and the investors in the background of energy crisis. To capture this energy, interdisciplinary efforts from chemistry, materials science, environmental science, and nanotechnology have been made to create efficient and economically viable energy conversion methods and materials. Beyond conventional membrane-based processes, technological breakthroughs in harvesting salinity gradient power from natural waters are expected to emerge from the novel fluidic transport phenomena on the nanoscale. A major challenge toward real-world applications is to extrapolate existing single-channel devices to macroscopic materials. Here, we report a membrane-scale nanofluidic device with asymmetric structure, chemical composition, and surface charge polarity, termed ionic diode membrane (IDM), for harvesting electric power from salinity gradient. The IDM comprises heterojunctions between mesoporous carbon (pore size ∼7 nm, negatively charged) and macroporous alumina (pore size ∼80 nm, positively charged). The meso-/macroporous membrane rectifies the ionic current with distinctly high ratio of ca. 450 and keeps on rectifying in high-concentration electrolytes, even in saturated solution. The selective and rectified ion transport furthermore sheds light on salinity-gradient power generation. By mixing artificial seawater and river water through the IDM, substantially high power density of up to 3.46 W/m(2) is discovered, which largely outperforms some commercial ion-exchange membranes. A theoretical model based on coupled Poisson and Nernst-Planck equations is established to quantitatively explain the experimental observations and get insights into the underlying mechanism. The macroscopic and asymmetric nanofluidic structure anticipates wide potentials for sustainable power generation, water purification, and desalination.

Evaluation of the Acceleration and Deceleration Phase-Rectified Slope to Detect and Improve IUGR Clinical Management

Directory of Open Access Journals (Sweden)

Salvatore Tagliaferri

2015-01-01

Full Text Available Objective. This study used a new method called Acceleration (or Deceleration Phase-Rectified Slope, APRS (or DPRS to analyze computerized Cardiotocographic (cCTG traces in intrauterine growth restriction (IUGR, in order to calculate acceleration- and deceleration-related fluctuations of the fetal heart rate, and to enhance the prediction of neonatal outcome. Method. Cardiotocograms from a population of 59 healthy and 61 IUGR fetuses from the 30th gestation week matched for gestational age were included. APRS and DPRS analysis was compared to the standard linear and nonlinear cCTG parameters. Statistical analysis was performed through the t-test, ANOVA test, Pearson correlation test and receiver operator characteristic (ROC curves (p<0,05. Results. APRS and DPRS showed high performance to discriminate between Healthy and IUGR fetuses, according to gestational week. A linear correlation with the fetal pH at birth was found in IUGR. The area under the ROC curve was 0.865 for APRS and 0.900 for DPRS before the 34th gestation week. Conclusions. APRS and DPRS could be useful in the identification and management of IUGR fetuses and in the prediction of the neonatal outcome, especially before the 34th week of gestation.

Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

Science.gov (United States)

Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

2018-03-01

The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

Comparison of three methods reducing the beam parameter product of a laser diode stack for long range laser illumination applications

Science.gov (United States)

Lutz, Yves; Poyet, Jean-Michel; Metzger, Nicolas

2013-10-01

Laser diode stacks are interesting laser sources for active imaging illuminators. They allow the accumulation of large amounts of energy in multi-pulse mode, which is well suited for long-range image recording. Even when laser diode stacks are equipped with fast-axis collimation (FAC) and slow-axis collimation (SAC) microlenses, their beam parameter product (BPP) are not compatible with a direct use in highly efficient and compact illuminators. This is particularly true when narrow divergences are required such as for long range applications. To overcome these difficulties, we conducted investigations in three different ways. A first near infrared illuminator based on the use of conductively cooled mini-bars was designed, realized and successfully tested during outdoor experimentations. This custom specified stack was then replaced in a second step by an off-the-shelf FAC + SAC micro lensed stack where the brightness was increased by polarization overlapping. The third method still based on a commercial laser diode stack uses a non imaging optical shaping principle resulting in a virtually restacked laser source with enhanced beam parameters. This low cost, efficient and low alignment sensitivity beam shaping method allows obtaining a compact and high performance laser diode illuminator for long range active imaging applications. The three methods are presented and compared in this paper.

Power converter for raindrop energy harvesting application: Half-wave rectifier

Science.gov (United States)

Izrin, Izhab Muhammad; Dahari, Zuraini

2017-10-01

Harvesting raindrop energy by capturing vibration from impact of raindrop have been explored extensively. Basically, raindrop energy is generated by converting the kinetic energy of raindrop into electrical energy by using polyvinylidene fluoride (PVDF) piezoelectric. In this paper, a power converter using half-wave rectifier for raindrop harvesting energy application is designed and proposed to convert damping alternating current (AC) generated by PVDF into direct current (DC). This research presents parameter analysis of raindrop simulation used in the experiment and resistive load effect on half-wave rectifier converter. The experiment is conducted by using artificial raindrop from the height of 1.3 m to simulate the effect of different resistive load on the output of half-wave rectifier converter. The results of the 0.68 MΩ resistive load showed the best performance of the half-wave rectifier converter used in raindrop harvesting energy system, which generated 3.18 Vaverage. The peak instantaneous output generated from this experiment is 15.36 µW.

Realistic-contact-induced enhancement of rectifying in carbon-nanotube/graphene-nanoribbon junctions

International Nuclear Information System (INIS)

Zhang, Xiang-Hua; Li, Xiao-Fei; Wang, Ling-Ling; Xu, Liang; Luo, Kai-Wu

2014-01-01

Carbon-nanotube/graphene-nanoribbon junctions were recently fabricated by the controllable etching of single-walled carbon-nanotubes [Wei et al., Nat. Commun. 4, 1374 (2013)] and their electronic transport properties were studied here. First principles results reveal that the transmission function of the junctions show a heavy dependence on the shape of contacts, but rectifying is an inherent property which is insensitive to the details of contacts. Interestingly, the rectifying ratio is largely enhanced in the junction with a realistic contact and the enhancement is insensitive to the details of contact structures. The stability of rectifying suggests a significant feasibility to manufacture realistic all-carbon rectifiers in nanoelectronics

Effect of defects on electrical properties of 4H-SiC Schottky diodes

International Nuclear Information System (INIS)

Ben Karoui, M.; Gharbi, R.; Alzaied, N.; Fathallah, M.; Tresso, E.; Scaltrito, L.; Ferrero, S.

2008-01-01

Most of power electronic circuits use power semiconductor switching devices which ideally present infinite resistance when off, zero resistance when on, and switch instantaneously between those two states. Switches and rectifiers are key components in power electronic systems, which cover a wide range of applications, from power transmission to control electronics and power supplies. Typical power switching devices such as diodes, thyristors, and transistors are based on a monocrystalline silicon semiconductor or silicon carbide. Silicon is less expensive, more widely used, and a more versatile processing material than silicon carbide. The silicon carbide (SiC) has properties that allow devices with high power voltage rating and high operating temperatures. The technology overcomes some crystal growth obstacles, by using the hydrogen in the fabrication of 4H-SiC wafers. The presence of structural defects on 4H-SiC wafers was shown by different techniques such as optical microscopy and scanning electron microscopy. The presence of different SiC polytypes inclusions was found by Raman spectroscopy. Schottky diodes were realized on investigated wafers in order to obtain information about the correlation between those defects and electrical properties of the devices. The diodes with voltage breakdown as 600 V and ideality factor as 1.05 were obtained and characterized after packaging

High-efficiency passive full wave rectification for electromagnetic harvesters

Science.gov (United States)

Yilmaz, Mehmet; Tunkar, Bassam A.; Park, Sangtak; Elrayes, Karim; Mahmoud, Mohamed A. E.; Abdel-Rahman, Eihab; Yavuz, Mustafa

2014-10-01

We compare the performance of four types of full-wave bridge rectifiers designed for electromagnetic energy harvesters based on silicon diodes, Schottky diodes, passive MOSFETs, and active MOSFETs. Simulation and experimental results show that MOSFET-type rectifiers are more efficient than diode-type rectifiers, reaching voltage and power efficiency of 99% for ideal voltage source with input amplitudes larger than 800 mV. Since active MOSFETs require extra components and an external DC power supply, we conclude that passive MOSFETs are superior for micro-power energy harvesting systems. We demonstrate passive MOSFET rectifiers implemented using discrete, off-shelf components and show that they outperform all electromagnetic harvester rectifiers hitherto reported obtaining a power efficiency of 95%. Furthermore, we show that passive MOSFET rectifiers do not affect the center frequency, harvesting bandwidth, or optimal resistance of electromagnetic harvesters. We demonstrate a complete power management module by adding a capacitor to the rectifier output terminal. We found that this configuration changed the optimal resistive load from 40 Ω to 55 Ω and decreased output power efficiency to 86%.

Fully superconducting rectifiers and fluxpumps

International Nuclear Information System (INIS)

Klundert, L.J.M. van de; Kate, H.H.J. ten

1981-01-01

Reviewing the basic principles of operation of fluxpumps, mechanical devices such as flux compressors and dynamos are discussed and electrically driven rectifier fluxpumps, with which current levels of over 10 KA can be obtained with high performance, are considered. 132 references. (U.K.)

A novel diode laser system for photodynamic therapy

DEFF Research Database (Denmark)

Samsøe, E.; Andersen, P. E.; Petersen, P.

2001-01-01

In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...

An experimental study on the effects of rectifiers on fluid flow

International Nuclear Information System (INIS)

Kawashima, G.

1985-01-01

This paper reports studies of various combinations of rectifiers and rectifying nets to measure fluid flow and in particular, the measurement of the flow through an orifice or nozzle, since they help to shorten the inlet length

Electric vehicle battery charging algorithm using PMSM windings and an inverter as an active rectifier

DEFF Research Database (Denmark)

Zaja, Mario; Oprea, Matei-lon; Suárez, Carlos Gómez

2014-01-01

for battery charging. Alternatively, charging could be done using the motor windings as grid side inductors and controlling the inverter to operate as an active boost rectifier. The challenge in this approach is the unequal phase inductances which depend on the rotor position. Another problem appears when...... an integrated charger control algorithm to charge the battery through a permanent magnet synchronous machine (PMSM) windings....

Phase locking of 2.324 and 2.959 terahertz quantum cascade lasers using a Schottky diode harmonic mixer.

Science.gov (United States)

Danylov, Andriy; Erickson, Neal; Light, Alexander; Waldman, Jerry

2015-11-01

The 23rd and 31st harmonics of a microwave signal generated in a novel THz balanced Schottky diode mixer were used as a frequency stable reference source to phase lock solid-nitrogen-cooled 2.324 and 2.959 THz quantum cascade lasers. Hertz-level frequency stability was achieved, which was maintained for several hours.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

Science.gov (United States)

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Amorphous structure evolution of high power diode laser cladded Fe–Co–B–Si–Nb coatings

International Nuclear Information System (INIS)

Zhu Yanyan; Li Zhuguo; Huang Jian; Li Min; Li Ruifeng; Wu Yixiong

2012-01-01

Highlights: ► Fabricated amorphous composited coating by high power diode laser cladding with single track. ► Lower dilution and higher scanning speed are desired to obtain higher amorphous phase fraction. ► White spots phase with high content of Nb embedded in the amorphous matrix. - Abstract: Fe–Co–B–Si–Nb coatings were fabricated on the surface of low carbon steel using high power diode laser cladding of [(Fe 0.5 Co 0.5 ) 0.75 B 0.2 Si 0.05 ] 95.7 Nb 4.3 amorphous powders at three different scanning speeds of 6, 17 and 50 m/s. At each scanning speed, laser power was optimized to obtain low dilution ratio. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy with energy dispersive spectrometer and electron probe micro analysis were carried out to characterize the microstructure and chemical composition of the cladded coatings. Differential scanning calorimetry was also carried out to investigate the fraction of the amorphous phase. The results showed that dilution ratio and scanning speed were the two main factors for fabricating Fe–Co–B–Si–Nb amorphous coating by high power diode laser cladding. Low dilution ratio was crucial for the formation of amorphous phase. When the dilution ratio was low, the fraction of amorphous phase in the cladded coatings increased upon increasing the scanning speed.

Systematic Design of the Lead-Lag Network Method for Active Damping in LCL-Filter Based Three Phase Converters

DEFF Research Database (Denmark)

Alzola, Rafael Pena; Liserre, Marco; Blaabjerg, Frede

2014-01-01

) nor its rationale has been explained. Thus, in this paper a straightforward procedure is developed to tune the lead-lag network with the help of software tools. The rationale of this procedure, based on the capacitor current feedback, is elucidated. Stability is studied by means of the root locus......Three-phase active rectifiers guarantee sinusoidal input currents and unity power factor at the price of a high switching frequency ripple. To adopt an LCL-filter, instead of an L-filter, allows using reduced values for the inductances and so preserving dynamics. However, stability problems can...... without using dissipative elements but, sometimes, needing additional sensors. This solution has been addressed in many publications. The lead-lag network method is one of the first reported procedures and continues being in use. However, neither there is a direct tuning procedure (without trial and error...

Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

Science.gov (United States)

Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

2014-10-15

We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

Specific residues of the cytoplasmic domains of cardiac inward rectifier potassium channels are effective antifibrillatory targets

Science.gov (United States)

Noujaim, Sami F.; Stuckey, Jeanne A.; Ponce-Balbuena, Daniela; Ferrer-Villada, Tania; López-Izquierdo, Angelica; Pandit, Sandeep; Calvo, Conrado J.; Grzeda, Krzysztof R.; Berenfeld, Omer; Sánchez Chapula, José A.; Jalife, José

2010-01-01

Atrial and ventricular tachyarrhythmias can be perpetuated by up-regulation of inward rectifier potassium channels. Thus, it may be beneficial to block inward rectifier channels under conditions in which their function becomes arrhythmogenic (e.g., inherited gain-of-function mutation channelopathies, ischemia, and chronic and vagally mediated atrial fibrillation). We hypothesize that the antimalarial quinoline chloroquine exerts potent antiarrhythmic effects by interacting with the cytoplasmic domains of Kir2.1 (IK1), Kir3.1 (IKACh), or Kir6.2 (IKATP) and reducing inward rectifier potassium currents. In isolated hearts of three different mammalian species, intracoronary chloroquine perfusion reduced fibrillatory frequency (atrial or ventricular), and effectively terminated the arrhythmia with resumption of sinus rhythm. In patch-clamp experiments chloroquine blocked IK1, IKACh, and IKATP. Comparative molecular modeling and ligand docking of chloroquine in the intracellular domains of Kir2.1, Kir3.1, and Kir6.2 suggested that chloroquine blocks or reduces potassium flow by interacting with negatively charged amino acids facing the ion permeation vestibule of the channel in question. These results open a novel path toward discovering antiarrhythmic pharmacophores that target specific residues of the cytoplasmic domain of inward rectifier potassium channels.—Noujaim, S. F., Stuckey, J. A., Ponce-Balbuena, D., Ferrer-Villada, T., López-Izquierdo, A., Pandit, S., Calvo, C. J., Grzeda, K. R., Berenfeld, O., Sánchez Chapula, J. A., Jalife, J. Specific residues of the cytoplasmic domains of cardiac inward rectifier potassium channels are effective antifibrillatory targets. PMID:20585026

Rectifier Current Control for an LLC Resonant Converter Based on a Simplified Linearized Model

OpenAIRE

Zhijian Fang; Junhua Wang; Shanxu Duan; Liangle Xiao; Guozheng Hu; Qisheng Liu

2018-01-01

In this paper, a rectifier current control for an LLC resonant converter is proposed, based on a simplified, two-order, linearized model that adds a rectifier current feedback inner loop to improve dynamic performance. Compared to the traditional large-signal model with seven resonant states, this paper utilizes a rectifier current state to represent the characteristics of the resonant states, simplifying the LLC resonant model from seven orders to two orders. Then, the rectifier current feed...

Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

Science.gov (United States)

Rahim, Ishrat; Shah, Mutabar; Iqbal, Mahmood; Wahab, Fazal; Khan, Afzal; Khan, Shah Haider

2017-11-01

The use of graphene in electronic devices is becoming attractive due to its inherent scalability and is thus well suited for flexible electronic devices. Here we present the electrical characterization of heterojunction diode, based on the nanocomposite of graphene (G) with silver nanoparticles (Ag NPs), at room temperature. The diode was fabricated by depositing nanocomposite on the n-Si substrate. The current - voltage (I - V) characteristic of the fabricated junction shows rectifying behavior similar to a Schottky junction. The junction parameters such as ideality factor (n), series resistance (Rs), and barrier height (ϕb) has been extracted, using various methods, from the experimentally obtained I - V data. The measured values of n, Rs and ϕb are 3.86, 45 Ω and 0.367 eV, respectively, as calculated from the I - V curve. The numerical values of these parameters calculated by different methods are in good agreement with each other showing the consistency of the applied calculating techniques. The conduction mechanism of the fabricated diode seems to have been dominated by the Trap Charge Limited Conduction (TCLC) behavior. The energy distribution of interface states density determined from forward bias I - V characteristic shows an exponential decrease with bias from 27 × 1013 cm-2 eV-1 at (Ec - 0.345) eV to 3 × 1013 cm-2 eV-1at (Ec - 0.398) eV.

Three-Phase High-Power and Zero-Current-Switching OBC for Plug-In Electric Vehicles

Directory of Open Access Journals (Sweden)

Cheng-Shan Wang

2015-06-01

Full Text Available In this paper, an interleaved high-power zero-current-switching (ZCS onboard charger (OBC based on the three-phase single-switch buck rectifier is proposed for application to plug-in electric vehicles (EVs. The multi-resonant structure is used to achieve high efficiency and high power density, which are necessary to reduce the volume and weight of the OBC. This study focuses on the border conditions of ZCS converting with a battery load, which means the variation ranges of the output voltage and current are very large. Furthermore, a novel hybrid control method combining pulse frequency modulation (PFM and pulse width modulation (PWM together is presented to ensure a driving frequency higher than 10 kHz, and this will reduce the unexpected inner resonant power flow and decrease the total harmonic distortion (THD of the input current under a light load at the end of the charging process. Finally, a prototype is established, and experiments are carried out. According to the experimental results, the conversion efficiency is higher than 93.5%, the THD about 4.3% and power factor (PF 0.98 under the maximum power output condition. Besides, a three-stage charging process is also carried out the experimental platform.

Electron transport in InAs/AlGaSb ballistic rectifiers

International Nuclear Information System (INIS)

Maemoto, Toshihiko; Koyama, Masatoshi; Furukawa, Masashi; Takahashi, Hiroshi; Sasa, Shigehiko; Inoue, Masataka

2006-01-01

Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have been measured at 77 K and 4.2 K. Rectification effects relying on the ballistic transport were observed. From the four-terminal resistance measured at low magnetic fields, we also observed magneto-resistance fluctuations corresponding to the electron trajectories and symmetry-breaking electron scattering, which are influenced by the magnetic field strength

Volume Bragg grating external cavities for the passive phase locking of high-brightness diode laser arrays: theoretical and experimental study

DEFF Research Database (Denmark)

Paboeuf, David; Vijayakumar, Deepak; Jensen, Ole Bjarlin

2011-01-01

We describe the theoretical modeling of the external-cavity operation of a phase-locked array of diode lasers in two configurations, the self-imaging cavity based on the Talbot effect and the angular-filtering cavity. Complex filtering functions, such as the transmission or reflection of a volume...

Single phase inverter for a three phase power generation and distribution system

Science.gov (United States)

Lindena, S. J.

1976-01-01

A breadboard design of a single-phase inverter with sinusoidal output voltage for a three-phase power generation and distribution system was developed. The three-phase system consists of three single-phase inverters, whose output voltages are connected in a delta configuration. Upon failure of one inverter the two remaining inverters will continue to deliver three-phase power. Parallel redundancy as offered by two three-phase inverters is substituted by one three-phase inverter assembly with high savings in volume, weight, components count and complexity, and a considerable increase in reliability. The following requirements must be met: (1) Each single-phase, current-fed inverter must be capable of being synchronized to a three-phase reference system such that its output voltage remains phaselocked to its respective reference voltage. (2) Each single-phase, current-fed inverter must be capable of accepting leading and lagging power factors over a range from -0.7 through 1 to +0.7.

On the Integration of Wide Band-gap Semiconductors in Single Phase Boost PFC Converters

DEFF Research Database (Denmark)

Hernandez Botella, Juan Carlos

Power semiconductor technology has dominated the evolution of switched mode power supplies (SMPS). Advances in silicon (Si) technology, as the introduction of metal oxide field effect transistor (MOSFET), isolated gate bipolar transistors (IGBT), superjunction vertical structures and Schottky...... diodes, or the introduction of silicon carbide (SiC) diodes, provided large steps in miniaturization and efficiency improvement of switched mode power converters. Gallium nitride (GaN) and SiC semiconductor devices have already been around for some years. The first one proliferated due to the necessity...... of high frequency operation in optoelectronics applications. On the other hand, Schottky SiC power diodes were introduced in 2001 as an alternative to eliminate reverse recovery issues in Si rectifiers. Wide band-gap semiconductors offer an increased electrical field strength and electron mobility...

Improved Design Methods for Robust Single- and Three-Phase ac-dc-ac Power Converters

DEFF Research Database (Denmark)

Qin, Zian

. The approaches for improving their performance, in terms of the voltage stress, efficiency, power density, cost, loss distribution, and temperature, will be studied. The structure of the thesis is as follows, Chapter 1 presents the introduction and motivation of the whole project as well as the background...... becomes a emerging challenge. Accordingly, installation of sustainable power generators like wind turbines and solar panels has experienced a large increase during the last decades. Meanwhile, power electronics converters, as interfaces in electrical system, are delivering approximately 80 % electricity...... back-to-back, and meanwhile improve the harmonics, control flexibility, and thermal distribution between the switches. Afterwards, active power decoupling methods for single-phase inverters or rectifiers that are similar to the single-phase ac-dc-ac converter, are studied in Chapter 4...

DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT

Directory of Open Access Journals (Sweden)

F. I. Bukashev

2016-01-01

Full Text Available Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.Methods. Considered are the structural and schematic circuit controlled rectifier based on bipolar static induction transistor (BSIT, and the criterion of effectiveness controlled rectifiers - equivalent to the voltage drop.Results. Presented are the study results of controlled rectifier layout on BSIT KT698I. It sets the layout operation at an input voltage of 2.0 V at a frequency up to 750 kHz. The efficiency of the studied layouts at moderate current densities as high as 90 % .Offered is optimization of technological route microelectronic controlled rectifier manufacturing including BSIT and integrated bipolar elements of the scheme management.Conclusion. It is proved that the most efficient use of the bipolar static induction transistor occurs at the low voltage controlled rectifiers 350-400 kHz, at frequencies in conjunction with a low-voltage control circuit.It is proved that the increase of the functional characteristics of the converters is connected to the expansion of the input voltage and output current ranges

Parameters extraction of the three diode model for the multi-crystalline solar cell/module using Moth-Flame Optimization Algorithm

International Nuclear Information System (INIS)

Allam, Dalia; Yousri, D.A.; Eteiba, M.B.

2016-01-01

Highlights: • More detailed models are proposed to emulate the multi-crystalline solar cell/module. • Moth-Flame Optimizer (MFO) is proposed for the parameter extraction process. • The performance of MFO technique is compared with the recent optimization algorithms. • MFO algorithm converges to the optimal solution more rapidly and more accurately. • MFO algorithm accomplished with three diode model achieves the most accurate model. - Abstract: As a result of the wide prevalence of using the multi-crystalline silicon solar cells, an accurate mathematical model for these cells has become an important issue. Therefore, a three diode model is proposed as a more precise model to meet the relatively complicated physical behavior of the multi-crystalline silicon solar cells. The performance of this model is compared to the performance of both the double diode and the modified double diode models of the same cell/module. Therefore, there is a persistent need to keep searching for a more accurate optimization algorithm to estimate the more complicated models’ parameters. Hence, a proper optimization algorithm which is called Moth-Flame Optimizer (MFO), is proposed as a new optimization algorithm for the parameter extraction process of the three tested models based on data measured at laboratory and other data reported at previous literature. To verify the performance of the suggested technique, its results are compared with the results of the most recent and powerful techniques in the literature such as Hybrid Evolutionary (DEIM) and Flower Pollination (FPA) algorithms. Furthermore, evaluation analysis is performed for the three algorithms of the selected models at different environmental conditions. The results show that, MFO algorithm achieves the least Root Mean Square Error (RMSE), Mean Bias Error (MBE), Absolute Error at the Maximum Power Point (AEMPP) and best Coefficient of Determination. In addition, MFO is reaching to the optimal solution with the

White organic light-emitting diodes from three emitter layers

Energy Technology Data Exchange (ETDEWEB)

Kim, M.S. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Lim, J.T. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Jeong, C.H. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Lee, J.H. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Yeom, G.Y. [Department of Advanced Materials Science and Engineering, SungKyunKwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of)]. E-mail: gyyeom@skku.edu

2006-11-23

Three-wavelength white organic light-emitting diodes (WOLEDs) were fabricated using two doped layers, which were obtained by separating the recombination zones into three emitter layers. A sky blue emission originated from the 4,4'-bis(2,2'-diphenylethen-1-yl)biphenyl (DPVBi) layer. A green emission originated from a tris(8-quinolinolato)aluminum (III) (Alq{sub 3}) host doped with a green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1] benz opyrano [6,7,8-ij]-quinolizin-11-one (C545T) dye. An orange emission was obtained from the N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) host doped with a red fluorescent dye, 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4 H-pyran (DCJTB). A white light resulted from the partial excitations of these three emitter layers by controlling the layer thickness and concentration of the fluorescent dyes in each emissive layer simultaneously. The electroluminescent spectrum of the device was not sensitive to the driving voltage of the device. The white light device showed a maximum luminance of approximately 53,000 cd/m{sup 2}. The external quantum and power efficiency at a luminance of approximately 100 cd/m{sup 2} were 2.62% and 3.04 lm/W, respectively.

Histological Study of Induced Incisions on Rabbits’ Tongues with Three Diode Lasers with Different Wavelengths in Continuous Mode

Directory of Open Access Journals (Sweden)

Salwa Yammine

2018-01-01

Full Text Available Objective. Diode lasers have multiple indications in everyday dental practice. They allow carrying out incisions, coagulation of soft tissue, and Low-Level Laser Therapy. The goal of this study is to compare histologically the tissue interaction zones and edges of an induced laser incision on rabbits’ tongues with three different wavelengths of 810, 940, and 980 nm in continuous mode. Methods. Fourteen male rabbits were divided into six groups. Each animal underwent three incisions of 10 mm length on the right ventral face of the tongue, carried out in continuous mode with three diode lasers with different wavelengths of 810, 940, and 980 nm. Rabbits were sacrificed at 0, 1, 2, 6, and 15 hours and 14 days. Five rabbits were sacrificed at 0 hours and 2 hours and one rabbit was sacrificed at 1, 6, and 15 hours and at 14 days. The appearance of neutrophils marked the onset time of the inflammatory reaction. Histological study of the incisions was chosen to evaluate the edges and to measure the depth and width of carbonization and necrotic and inflammatory zones. Healing was evaluated at 14 days. Friedman test was used to assess statistical differences between groups. Results. In the experimental adopted conditions, the carbonization zone was marked by degradation of vacuoles and an elongation of nuclei and was observed on the edges of incisions. Carbonization and necrotic and inflammatory zones were measured for rabbits sacrificed at 0, 1, 2, 6, and 15 hours but the onset of inflammation zone marked by the infiltration of neutrophils did not appear before 6 hours. The neutrophils infiltration was higher at 15 hours than at 6 hours. Complete healing was shown at 14 days. According to the time for the regularity of the edges, the interpretation was qualitative without a statistical test. The statistical analysis of the three different diode lasers in this study showed nonsignificant difference between the different groups for the depth (p=0

Phase-matched light amplification by three-wave mixing process in a birefringent fiber due to externally applied stress

International Nuclear Information System (INIS)

Ohashi, M.; Kitayama, K.; Ishida, Y.; Uchida, N.

1982-01-01

A novel method to achieve phase-matched light amplification in a birefringent fiber via the three-wave mixing is proposed by using frequency shift change due to the stress applied to the fiber. It is confirmed that the signal power from a cw laser diode at lambda = 1.292 μm is amplified by 6.1 x 10 3 times in the birefringent fiber pumped with a Q-switched Nd: yttrium aluminum garnet laser at lambda = 1.064 μm. This will provide a new fiber-optic light signal amplifier having a good tolerance for variation of signal wavelengths

Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications

KAUST Repository

Wang, Song

2017-05-10

Thermal diodes, or devices that transport thermal energy asymmetrically, analogous to electrical diodes, hold promise for thermal energy harvesting and conservation, as well as for phononics or information processing. The junction of a phase change material and phase invariant material can form a thermal diode; however, there are limited constituent materials available for a given target temperature, particularly near ambient. In this work, we demonstrate that a micro and nanoporous polystyrene foam can house a paraffin-based phase change material, fused to PMMA, to produce mechanically robust, solid-state thermal diodes capable of ambient operation with Young\\'s moduli larger than 11.5 MPa and 55.2 MPa above and below the melting transition point, respectively. Moreover, the composites show significant changes in thermal conductivity above and below the melting point of the constituent paraffin and rectification that is well-described by our previous theory and the Maxwell–Eucken model. Maximum thermal rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences – analogous to an electrical diode bridge with widespread implications for transient thermal energy harvesting and conservation. Overall, our approach yields mechanically robust, solid-state thermal diodes capable of engineering design from a mathematical model of phase change and thermal transport, with implications for energy harvesting.

Noise rectifier based on the two-dimensional electron gas

Energy Technology Data Exchange (ETDEWEB)

Cheremisin, M. V., E-mail: tcher_max@yahoo.com [Ioffe Physical-Technical Institute (Russian Federation)

2012-09-15

The dc voltage observed at low temperatures in a 2D electron sample in the absence of noticeable external excitations [1] is accounted by the Schottky contact rectification of the noise generated in the measuring circuit. The rectified voltage is shown to depend on the asymmetry of the contact pair. The dependence of the rectified voltage on the noise amplitude first follows the trivial quadratic law, then exhibits a nearly linear behavior, and finally, levels off.

A high-power magnetically switched superconducting rectifier operating at 5 Hz

NARCIS (Netherlands)

Mulder, G.B.J.; Krooshoop, Hendrikus J.G.; Nijhuis, Arend; ten Kate, Herman H.J.; van de Klundert, L.J.M.

1987-01-01

Above a certain current level, the use of a superconducting rectifier as a cryogenic current source offers advantages compared to the use of a power supply at room temperature which requires large current feed-throughs into the cryostat. In some cases, the power of such a rectifier is immaterial,

G-protein-coupled inward rectifier potassium current contributes to ventricular repolarization

DEFF Research Database (Denmark)

Liang, Bo; Nissen, Jakob D; Laursen, Morten

2014-01-01

The purpose of this study was to investigate the functional role of G-protein-coupled inward rectifier potassium (GIRK) channels in the cardiac ventricle.......The purpose of this study was to investigate the functional role of G-protein-coupled inward rectifier potassium (GIRK) channels in the cardiac ventricle....

Designing thermal diode and heat pump based on DNA nanowire: Multifractal approach

Energy Technology Data Exchange (ETDEWEB)

Behnia, S., E-mail: s.behnia@iaurmia.ac.ir; Panahinia, R.

2017-07-12

The management of heat flow in DNA nano wire was considered. Thermal diode effect in DNA and the domain of its appearance dependent to system parameters have been detected. The appearance of directed thermal flow in thermodynamic sizes proposes the possibility of designing the macroscopic thermal rectifier. By applying driven force, pumping effect has been also observed. The resonance frequency of DNA and threshold amplitudes of driving force for attaining permanent pumping effect have been detected. Forasmuch as detecting negative differential thermal resistance (NDTR) phenomenon, DNA can act as a thermal transistor. By using an analytical parallel investigation based on Rényi spectrum analysis, threshold values to transition to NDTR and pumping regimes have been detected. - Highlights: • The control and management of heat current in DNA have been investigated. • Directed thermal flow and NDTR in DNA have been identified. • By increasing the system size, the reversed thermal rectification appeared. So, it is proposed the possibility of designing the macroscopic thermal rectifier. • Pumping effect accompanied with detection of resonance frequency of DNA has been observed. • To verify the results, we did a parallel analysis based on multifractal concept to detect threshold values for transition to pumping state and NDTR regime.

Contribution of delayed rectifier potassium currents to the electrical activity of murine colonic smooth muscle

Science.gov (United States)

Koh, S D; Ward, S M; Dick, G M; Epperson, A; Bonner, H P; Sanders, K M; Horowitz, B; Kenyon, J L

1999-01-01

We used intracellular microelectrodes to record the membrane potential (Vm) of intact murine colonic smooth muscle. Electrical activity consisted of spike complexes separated by quiescent periods (Vm≈−60 mV). The spike complexes consisted of about a dozen action potentials of approximately 30 mV amplitude. Tetraethylammonium (TEA, 1–10 mM) had little effect on the quiescent periods but increased the amplitude of the action potential spikes. 4-Aminopyridine (4-AP, ⋧ 5 mM) caused continuous spiking.Voltage clamp of isolated myocytes identified delayed rectifier K+ currents that activated rapidly (time to half-maximum current, 11.5 ms at 0 mV) and inactivated in two phases (τf = 96 ms, τs = 1.5 s at 0 mV). The half-activation voltage of the permeability was −27 mV, with significant activation at −50 mV.TEA (10 mM) reduced the outward current at potentials positive to 0 mV. 4-AP (5 mM) reduced the early current but increased outward current at later times (100–500 ms) consistent with block of resting channels relieved by depolarization. 4-AP inhibited outward current at potentials negative to −20 mV, potentials where TEA had no effect.Qualitative PCR amplification of mRNA identified transcripts encoding delayed rectifier K+ channel subunits Kv1.6, Kv4.1, Kv4.2, Kv4.3 and the Kvβ1.1 subunit in murine colon myocytes. mRNA encoding Kv 1.4 was not detected.We find that TEA-sensitive delayed rectifier currents are important determinants of action potential amplitude but not rhythmicity. Delayed rectifier currents sensitive to 4-AP are important determinants of rhythmicity but not action potential amplitude. PMID:10050014

Changes in Inward Rectifier K+ Channels in Hepatic Stellate Cells During Primary Culture

Science.gov (United States)

Lee, Dong Hyeon; Kong, In Deok; Lee, Joong-Woo

2008-01-01

Purpose This study examined the expression and function of inward rectifier K+ channels in cultured rat hepatic stellate cells (HSC). Materials and Methods The expression of inward rectifier K+ channels was measured using real-time RT-PCR, and electrophysiological properties were determined using the gramicidin-perforated patch-clamp technique. Results The dominant inward rectifier K+ channel subtypes were Kir2.1 and Kir6.1. These dominant K+ channel subtypes decreased significantly during the primary culture throughout activation process. HSC can be classified into two subgroups: one with an inward-rectifying K+ current (type 1) and the other without (type 2). The inward current was blocked by Ba2+ (100 µM) and enhanced by high K+ (140 mM), more prominently in type 1 HSC. There was a correlation between the amplitude of the Ba2+-sensitive current and the membrane potential. In addition, Ba2+ (300 µM) depolarized the membrane potential. After the culture period, the amplitude of the inward current decreased and the membrane potential became depolarized. Conclusion HSC express inward rectifier K+ channels, which physiologically regulate membrane potential and decrease during the activation process. These results will potentially help determine properties of the inward rectifier K+ channels in HSC as well as their roles in the activation process. PMID:18581597

Comparison of thyristor rectifier characteristics with different gate control systems

International Nuclear Information System (INIS)

Gula, V.; Cherepakhin, A.A.

1982-01-01

Some thyristor gate control systems both synchronous and nonsynchronous ones are described. The experimental results of supply voltage asymmetry influence on spectral contents of rectified. output voltage are quoted. Dynamic and frequency responses of these systems are investigated too. Results of comparison of the spectral content of 100 Hz subharmonic of rectified voltage on loading current showed the advantage of the systems with feedback [ru

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Reduction of Harmonics by 18-Pulse Rectifier

Directory of Open Access Journals (Sweden)

Stanislav Kocman

2008-01-01

Full Text Available Operation of such electrical devices as data processing and electronics devices, adjustable speed drives or uninterruptible power supply can cause problems by generating harmonic currents into the network, from which they are supplied. Effects of these harmonic currents are various, they can get worse the quality of supply voltage in the network or to have negative influences on devices connected to this network. There are various technical solutions for reduction of harmonics. One of them is using of multi-pulse rectifiers, whereas the 18-pulse rectifier in the structure of adjustable speed drive is briefly presented in this paper including some results of its behaviour. The examined experimental measurements confirmed its very good efficiency in the harmonic mitigation.

Influence of the polymer concentration on the electroluminescence of ZnO nanorod/polymer hybrid light emitting diodes

Science.gov (United States)

Zaman, Saima; Zainelabdin, Ahmed; Amin, Gul; Nur, Omer; Willander, Magnus

2012-09-01

The effects of the polymer concentration on the performance of hybrid light emitting diodes (LEDs) based on zinc oxide nanorods (ZnO NRs) and poly(9,9-dioctylfluorene) (PFO) were investigated. Various characterization techniques were applied to study the performance of the PFO/ZnO NR hybrid LEDs fabricated with various PFO concentrations. The fabricated hybrid LEDs demonstrated stable rectifying diode behavior, and it was observed that the turn-on voltage of the LEDs is concentration dependent. The measured room temperature electroluminescence (EL) showed that the PFO concentration plays a critical role in the emission spectra of the hybrid LEDs. At lower PFO concentrations of 2-6 mg/ml, the EL spectra are dominated by blue emission. However, by increasing the concentration to more than 8 mg/ml, the blue emission was completely suppressed while the green emission was dominant. This EL behavior was explained by a double trap system of excitons that were trapped in the β-phase and/or in the fluorenone defects in the PFO side. The effects of current injection on the hybrid LEDs and on the EL emission were also investigated. Under a high injection current, a new blue peak was observed in the EL spectrum, which was correlated to the creation of a new chemical species on the PFO chain. The green emission peak was also enhanced with increasing injection current because of the fluorenone defects. These results indicate that the emission spectra of the hybrid LEDs can be tuned by using different polymer concentrations and by varying the current injected into the device.

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Directory of Open Access Journals (Sweden)

Abdul Manaf Hashim

2011-08-01

Full Text Available A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT structure. Current-voltage (I-V measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Dynamic and Control Analysis of Modular Multi-Parallel Rectifiers (MMR)

DEFF Research Database (Denmark)

Zare, Firuz; Ghosh, Arindam; Davari, Pooya

2017-01-01

This paper presents dynamic analysis of a Modular Multi-Parallel Rectifier (MMR) based on state-space modelling and analysis. The proposed topology is suitable for high power application which can reduce line current harmonics emissions significantly. However, a proper controller is required...... to share and control current through each rectifier. Mathematical analysis and preliminary simulations have been carried out to verify the proposed controller under different operating conditions....

Quaternary InGaAsSb Thermophotovoltaic Diodes

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-01-01

In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

US Mains Stacked Very High Frequency Self-oscillating Resonant Power Converter with Unified Rectifier

DEFF Research Database (Denmark)

Pedersen, Jeppe Arnsdorf; Madsen, Mickey Pierre; Mønster, Jakob Døllner

2016-01-01

This paper describes a Very High Frequency (VHF) converter made with three Class-E inverters and a single ClassDE rectifier. The converter is designed for the US mains (120 V, 60 Hz) and can deliver 9 W to a 60 V LED. The converter has a switching frequency of 37 MHz and achieves an efficiency...

Torsion angle dependence of the rectifying performance in molecular device with asymmetrical anchoring groups

International Nuclear Information System (INIS)

Wang, L.H.; Guo, Y.; Tian, C.F.; Song, X.P.; Ding, B.J.

2010-01-01

Using first-principles density functional theory and nonequilibrium Green's function formalism, we investigate the effect of torsion angle on the rectifying characteristics of 4'-thiolate-biphenyl-4-dithiocarboxylate sandwiched between two Au(111) electrodes. The results show that the torsion angle has an evident influence on rectifying performance of such devices. By increasing the dihedral angle between two phenyl rings, namely changing the magnitude of the intermolecular coupling effect, a different rectifying behavior can be observed in these systems. Our findings highlight that the rectifying characteristics are intimately related to dihedral angles and can provide fundamental guidelines for the design of functional molecular devices.

Detection of vortex-core dynamics using current-induced self-bistable rectifying effect

International Nuclear Information System (INIS)

Goto, M; Hata, H; Yamaguchi, A; Miyajima, H; Nozaki, Y; Nakatani, Y; Yamaoka, T

2011-01-01

A magnetic vortex core confined in a micron-scale magnetic disk is resonantly excited by spin-polarized radio-frequency (rf) current and rf field. We show that rectifying voltage spectra caused by the vortex core resonance is dependent on the core polarity. Rectifying voltage spectra are given by the superposition of the polarity-dependent term and the polarity-independent term. The sign of the polarity-dependent rectifying voltage reverses when the sign of polarity P or external field H is reversed. This experimental result can be explained by the anisotropic magnetoresistance effect caused by the vortex core motion.

Solid state thermal rectifier

Science.gov (United States)

None

2016-07-05

Thermal rectifiers using linear nanostructures as core thermal conductors have been fabricated. A high mass density material is added preferentially to one end of the nanostructures to produce an axially non-uniform mass distribution. The resulting nanoscale system conducts heat asymmetrically with greatest heat flow in the direction of decreasing mass density. Thermal rectification has been demonstrated for linear nanostructures that are electrical insulators, such as boron nitride nanotubes, and for nanostructures that are conductive, such as carbon nanotubes.

Single-Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

Energy Technology Data Exchange (ETDEWEB)

Chinthavali, Madhu Sudhan [ORNL; Onar, Omer C [ORNL; Miller, John M [ORNL; Tang, Lixin [ORNL

2013-01-01

Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance. To understand the power flow through the system this paper presents a novel approach to the system model and the impact of different control parameters on the load power. The implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation is also discussed.

A novel approach to determine the interphase transformer inductance of 18 pulse rectifiers

International Nuclear Information System (INIS)

Sefa, Ibrahim; Altin, Necmi

2009-01-01

The interphase transformer inductance seriously affects the performance of 18 pulse rectifiers. Low inductance values cause non-characteristic harmonics whereas high inductance values increase the rectifier cost and size. Hence, determination of the interphase transformer inductance value is an important problem in the design of 18 pulse rectifiers. In this paper, an approach to determine the optimum inductance value of an interphase transformer is proposed and a practical formula is introduced. The proposed approach has been validated with simulation and experimental studies carried out with designed capacitive loaded autotransformer based 18 pulse rectifier for different IPT inductance values at different load levels. Experimental and simulation results show that cost effective interphase transformer inductance value can be determined with the proposed approach and this value reduces the line current harmonics and improves power factor drastically.

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

Science.gov (United States)

Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

2014-09-01

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

A Theoretical Investigation on Rectifying Performance of a Single Motor Molecular Device

International Nuclear Information System (INIS)

Lei Hui; Tan Xun-Qiong

2015-01-01

We report ab initio calculations of the transport behavior of a phenyl substituted molecular motor. The calculated results show that the transport behavior of the device is sensitive to the rotation degree of the rotor part. When the rotor part is parallel with the stator part, a better rectifying performance can be found in the current-voltage curve. However, when the rotor part revolves to vertical with the stator part, the currents in the positive bias region decrease slightly. More importantly, the rectifying performance disappears. Thus this offers us a new method to modulate the rectifying behavior in molecular devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

A four-diode full-wave ionic current rectifier based on bipolar membranes: overcoming the limit of electrode capacity.

Science.gov (United States)

Gabrielsson, Erik O; Janson, Per; Tybrandt, Klas; Simon, Daniel T; Berggren, Magnus

2014-08-13

Full-wave rectification of ionic currents is obtained by constructing the typical four-diode bridge out of ion conducting bipolar membranes. Together with conjugated polymer electrodes addressed with alternating current, the bridge allows for generation of a controlled ionic direct current for extended periods of time without the production of toxic species or gas typically arising from electrode side-reactions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of thermometrical characteristics of p+–n-GaP diodes

Directory of Open Access Journals (Sweden)

Sypko N. I.

2008-12-01

Full Text Available The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspectivity of developed GaP-diodes application as sensitive elements of high-temperature sensor is shown.

Monolayer MoS{sub 2} self-switching diodes

Energy Technology Data Exchange (ETDEWEB)

Al-Dirini, Feras, E-mail: alf@unimelb.edu.au; Hossain, Md Sharafat [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Victorian Research Laboratory, National ICT Australia, West Melbourne, Victoria (Australia); Hossain, Faruque M.; Skafidas, Efstratios [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Mohammed, Mahmood A. [Princess Sumaya University for Technology, Amman (Jordan); Nirmalathas, Ampalavanapillai [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Melbourne Networked Society Institute (MNSI), University of Melbourne, Victoria (Australia)

2016-01-28

This paper presents a new molybdenum disulphide (MoS{sub 2}) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS{sub 2} monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS{sub 2} results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70.

Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

Science.gov (United States)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

Characteristic of laser diode beam propagation through a collimating lens.

Science.gov (United States)

Xu, Qiang; Han, Yiping; Cui, Zhiwei

2010-01-20

A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

19 rectifiers to supply the coils of the TCV tokamak

International Nuclear Information System (INIS)

Fasel, D.; Perez, A.; Depreville, G.; Puchar, F.; Pahud, J.D.

1990-01-01

This paper describes the electrical network designed to supply the 19 coils of the TCV (Tokamak a Configuration Variable) tokamak. After a brief description of the main purpose of TCV, the general characteristics of the TCV network are given. Then the technical choices made for the rectifier power stage are detailed. There follows a description of the rectifier digital control electronics. Comments on simulations carried out and the actual status conclude the paper. (author) 3 refs., 5 figs., 2 tabs

Three-Phased Wake Vortex Decay

Science.gov (United States)

Proctor, Fred H.; Ahmad, Nashat N.; Switzer, George S.; LimonDuparcmeur, Fanny M.

2010-01-01

A detailed parametric study is conducted that examines vortex decay within turbulent and stratified atmospheres. The study uses a large eddy simulation model to simulate the out-of-ground effect behavior of wake vortices due to their interaction with atmospheric turbulence and thermal stratification. This paper presents results from a parametric investigation and suggests improvements for existing fast-time wake prediction models. This paper also describes a three-phased decay for wake vortices. The third phase is characterized by a relatively slow rate of circulation decay, and is associated with the ringvortex stage that occurs following vortex linking. The three-phased decay is most prevalent for wakes imbedded within environments having low-turbulence and near-neutral stratification.

Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes

International Nuclear Information System (INIS)

Taşçıoğlu, İlke; Farooq, W.A.; Turan, Raşit; Altındal, Şemsettin; Yakuphanoglu, Fahrettin

2014-01-01

Highlights: • The undoped and Mn doped ZnO films were deposited on p-Si substrates by sol–gel method. • The effect of Mn incorporation into ZnO on the electrical properties of ZnO/p-Si diodes were investigated. • The leakage current decreases and the rectification ratio increases with Mn doping. • The D it value was lowered by Mn dopant. -- Abstract: MnZnO films were grown onto p-Si substrate by sol–gel spin coating method. The electrical properties of the diodes were investigated at room temperature via the current–voltage (I–V), capacitance–voltage–frequency (C–V–f), and conductance—voltage–frequency (G–V–f) methods by considering the effect of the interface trap density (D it ) and series resistance (R s ) of the diodes. The rectifying ratio (RR) values of undoped and Mn-doped ZnO/p-Si diodes (at ±4 V) were found to be 275 and 2031, respectively. Mn doping decreases leakage current and increases shunt resistance (R sh ). Also, the reasons of discrepancies in barrier height values determined from different methods were discussed. The C–V and G–V measurements were performed at various frequencies. We observe additional contribution to the capacitance at low frequencies due to interface traps which can follow the ac test signal easily. The density of interface traps (D it ) determined from Hill–Coleman method was also presented for making comparison. The D it values vary from 9.24 × 10 11 to 1.67 × 10 13 eV −1 cm −2 and 2.06 × 10 11 to 2.54 × 10 12 eV −1 cm −2 for undoped and Mn-doped ZnO/p-Si diodes, respectively

PWM Regulation of Grid-Tied PV System on the Base of Photovoltaic-Fed Diode-Clamped Inverters

Directory of Open Access Journals (Sweden)

Oleschuk V.I.

2015-12-01

Full Text Available Investigation of grid-tied photovoltaic system on the base of two diode-clamped inverters, controlled by specific algorithms of pulse-width modulation (PWM, has been done. This system includes two strings of photovoltaic panels feeding two diode-clamped inverters. The outputs of inverters are connected with the corresponding windings on the primary side of three-phase transformer, connected with a grid. In order to reduce phase voltage distortion and to increase efficiency of operation of the system, special scheme of control and modulation of inverters has been used, providing minimization of common-mode voltages and voltage waveforms symmetries under different operating conditions. Detailed simulation of processes in this photovoltaic-fed power conversion system has been executed. The results of simulations verify good performance of photovoltaic system regulated in accordance with specific strategy of control and modulation.

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

Science.gov (United States)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

Temperature-Corrected Oxygen Detection Based on Multi-Mode Diode Laser Correlation Spectroscopy

Directory of Open Access Journals (Sweden)

Xiutao Lou

2013-01-01

Full Text Available Temperature-corrected oxygen measurements were performed by using multi-mode diode laser correlation spectroscopy at temperatures ranging between 300 and 473 K. The experiments simulate in situ monitoring of oxygen in coal-combustion exhaust gases at the tail of the flue. A linear relationship with a correlation coefficient of −0.999 was found between the evaluated concentration and the gas temperature. Temperature effects were either auto-corrected by keeping the reference gas at the same conditions as the sample gas, or rectified by using a predetermined effective temperature-correction coefficient calibrated for a range of absorption wavelengths. Relative standard deviations of the temperature-corrected oxygen concentrations obtained by different schemes and at various temperatures were estimated, yielding a measurement precision of 0.6%.

Fast switching wideband rectifying circuit for future RF energy harvesting

Science.gov (United States)

Asmeida, Akrem; Mustam, Saizalmursidi Md; Abidin, Z. Z.; Ashyap, A. Y. I.

2017-09-01

This paper presents the design and simulation of fast switching microwave rectifying circuit for ultra wideband patch antenna over a dual-frequency band (1.8 GHz for GSM and 2.4 GHz for ISM band). This band was chosen due to its high signal availability in the surrounding environment. New rectifying circuit topology with pair-matching trunks is designed using Advanced Design System (ADS) software. These trunks are interfaced with power divider to achieve good bandwidth, fast switching and high efficiency. The power divider acts as a good isolator between the trunks and its straightforward design structure makes it a good choice for a single feed UWB antenna. The simulated results demonstrate that the maximum output voltage is 2.13 V with an input power of -5 dBm. Moreover, the rectifier offers maximum efficiency of 86% for the input power of -5 dBm at given band, which could easily power up wireless sensor networks (WSN) and other small devices sufficiently.

Memory Applications Using Resonant Tunneling Diodes

Science.gov (United States)

Shieh, Ming-Huei

Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.

Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets

International Nuclear Information System (INIS)

Long Yunze; Yin Zhihua; Hui Wen; Chen Zhaojia; Wan Meixiang

2008-01-01

This paper reports that the Schottky junctions between low work function metals (e.g. Al and In) and doped semiconducting polymer pellets (e.g. polyaniline (PANI) microsphere pellet and polypyrrole (PPy) nanotube pellet) have been prepared and studied. Since Ag is a high work function metal which can make an ohmic contact with polymer, silver paste was used to fabricate the electrodes. The Al/PANI/Ag heterojunction shows an obvious rectifying effect as shown in I – V characteristic curves (rectifying ratio γ = 5 at ±6 V bias at room temperature). As compared to the Al/PANI/Ag, the heterojunction between In and PANI (In/PANI/Ag) exhibits a lower rectifying ratio γ = 1.6 at ±2 V bias at room temperature. In addition, rectifying effect was also observed in the heterojunctions Al/PPy/Ag (γ = 3.2 at ±1.6 V bias) and In/PPy/Ag (γ = 1.2 at ±3.0 V bias). The results were discussed in terms of thermoionic emission theory. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The harmonic composition of the output voltage of a rectifier unit with a PWM voltage booster converter.

OpenAIRE

ПАНЧЕНКО, В В

2015-01-01

The author investigates a rectifier unit constructed on the basis of cascade connection of the main non-controlled m-pulse rectifier and PWM voltage booster converter. The research presents the analysis of the harmonic composition of the output voltage of a rectifier unit with a PWM voltage booster converter on completely controlled keys. The dependence of the relative harmonic amplitude on the commutation corner is defined. The estimation of a rectifier unit electromagnetic compatibility wit...

Dynamics of the inward rectifier K+ current during the action potential of guinea pig ventricular myocytes

OpenAIRE

Ibarra, J.; Morley, G.E.; Delmar, M.

1991-01-01

The potassium selective, inward rectifier current (IK1) is known to be responsible for maintaining the resting membrane potential of quiescent ventricular myocytes. However, the contribution of this current to the different phases of the cardiac action potential has not been adequately established. In the present study, we have used the action potential clamp (APC) technique to characterize the dynamic changes of a cesium-sensitive (i.e., Ik1) current which occur during the action potential. ...

A 50–60 GHz mm-wave rectifier with bulk voltage bias in 65-nm CMOS

NARCIS (Netherlands)

Gao, H.; Matters-Kammerer, M.; Harpe, P.; Baltus, P.

2016-01-01

This letter presents a 50∼60 GHz fully integrated 3-stage rectifier with bulk voltage bias for threshold voltage modulation in a 65-nm CMOS technology, which can be integrated in a mm-wave hybrid rectifier structure as the main rectifier. In this letter, the new technique of bulk voltage bias is

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

Science.gov (United States)

Liu, Bo; Braiman, Yehuda

2018-05-01

We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

A Novel Three Phase to Seven Phase Conversion Technique Using Transformer Winding Connections

Directory of Open Access Journals (Sweden)

M. Tabrez

2017-10-01

Full Text Available This paper proposes a novel multiphase transformer connection scheme which converts three phase balanced AC input to seven phase balanced AC output. Generalized theory to convert a three phase utility supply into any number of phases is presented. Based on the proposed generalized principle, a three phase to seven phase power converting transformer design is presented with connection scheme, analysis and simulation and experimental results of the proposed three phase to seven phase conversion transformer. The proposed transformer in this paper is analyzed and compared with the connection scheme for seven phase available in the literature. The connection scheme is found to have higher power density, lower core area and lower core requirement as compared to the available connection scheme of the same rating. Impedance mismatching between different phases of the transformer is observed in the three phase to seven phase transformer available in the literature. As this mismatching introduces error in study of per phase equivalent circuit diagrams as well as imbalance in voltage and currents. The present design also addresses the impedance mismatching issue and reduces mismatching in the proposed transformer design. A prototype of the proposed system is developed and waveforms are presented. The proposed design is verified using simulation and validated using experimental approach.

Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

International Nuclear Information System (INIS)

Zhao Peng; Zhang Ying; Wang Pei-Ji; Zhang Zhong; Liu De-Sheng

2011-01-01

Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C 60 nanotube caps. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Testing of a direct drive generator for wind turbines

Energy Technology Data Exchange (ETDEWEB)

Sondergaard, L.M. [Riso National Laboratory, Roskilde (Denmark)

1996-12-31

The normal drive train of a wind turbine consists a gearbox and a 4 to 8 poles asynchronous generator. The gearbox is an expensive and unreliable components and this paper deals with testing of a direct drive synchronous generator for a gearless wind turbine. The Danish company Belt Electric has constructed and manufactured a 27 kW prototype radial flux PM-generator (DD600). They have used cheap hard ferrite magnets in the rotor of this PM-generator. This generator has been tested at Riso and the test results are investigated and analyzed in this paper. The tests have been done with three different load types (1: resistance; 2: diode rectifier, DC-capacitor, resistance; 3: AC-capacitor, diode rectifier, DC-capacitor, resistance). 1 ref., 9 figs., 5 tabs.

Conduction and rectification in NbO{sub x}- and NiO-based metal-insulator-metal diodes

Energy Technology Data Exchange (ETDEWEB)

Osgood, Richard M., E-mail: richard.m.osgood.civ@mail.mil; Giardini, Stephen; Carlson, Joel [US Army Natick Soldier Research Development and Engineering Center (NSRDEC), 15 General Greene Ave., Natick, Massachusetts 01760 (United States); Periasamy, Prakash; Guthrey, Harvey; O' Hayre, Ryan [Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States); Chin, Matthew; Nichols, Barbara; Dubey, Madan [RF and Electronics Division, US Army Research Laboratory, Adelphi, Maryland 20783 (United States); Fernandes, Gustavo; Kim, Jin Ho; Xu, Jimmy [Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912 (United States); Parilla, Philip; Berry, Joseph; Ginley, David [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2016-09-15

Conduction and rectification in nanoantenna-coupled NbO{sub x}- and NiO-based metal-insulator-metal (MIM) diodes (“nanorectennas”) are studied by comparing new theoretical predictions with the measured response of nanorectenna arrays. A new quantum mechanical model is reported and agrees with measurements of current–voltage (I–V) curves, over 10 orders of magnitude in current density, from [NbO{sub x}(native)-Nb{sub 2}O{sub 5}]- and NiO-based samples with oxide thicknesses in the range of 5–36 nm. The model, which introduces new physics and features, including temperature, electron effective mass, and image potential effects using the pseudobarrier technique, improves upon widely used earlier models, calculates the MIM diode's I–V curve, and predicts quantitatively the rectification responsivity of high frequency voltages generated in a coupled nanoantenna array by visible/near-infrared light. The model applies both at the higher frequencies, when high-energy photons are incident, and at lower frequencies, when the formula for classical rectification, involving derivatives of the I–V curve, may be used. The rectified low-frequency direct current is well-predicted in this work's model, but not by fitting the experimentally measured I–V curve with a polynomial or by using the older Simmons model (as shown herein). By fitting the measured I–V curves with our model, the barrier heights in Nb-(NbO{sub x}(native)-Nb{sub 2}O{sub 5})-Pt and Ni-NiO-Ti/Ag diodes are found to be 0.41/0.77 and 0.38/0.39 eV, respectively, similar to literature reports, but with effective mass much lower than the free space value. The NbO{sub x} (native)-Nb{sub 2}O{sub 5} dielectric properties improve, and the effective Pt-Nb{sub 2}O{sub 5} barrier height increases as the oxide thickness increases. An observation of direct current of ∼4 nA for normally incident, focused 514 nm continuous wave laser beams are reported, similar in magnitude to recent reports

Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

DEFF Research Database (Denmark)

Criado, A. R.; Acedo, P.; Carpintero, G.

2012-01-01

A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

Imbalance of tensions in agro-industrial electrical installations; Desequilibrio de tensoes em instalacoes eletricas agroindustriais

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Ricardo Martini; Serni, Paulo Jose Amaral; Rodrigues, Jose Francisco; Porto, Luiz Gonzaga Campos [Universidade Estadual Paulista (UNESP), Bauru SP (Brazil). Fac. de Engenharia. Dept. de Engenharia Eletrica], Emails: martini@feb.unesp.br, martini@feb.unesp.br, paulojas@feb.unesp.br, jfranc@feb.unesp.br, porto@feb.unesp.br

2006-07-01

This paper analyzes three-phase industrial agricultural loads operation, under conditions of feeding with unbalanced voltages. Simulations are made in the circuits operating with balanced and unbalanced voltages and the effects in an three-phase induction motor and in an three-phase rectifier are analyzed. The oscillation in steady-state torque in the three-phase induction motor and the generation of triple n harmonics components in the three-phase six pulses rectifier are distinguished as important effects of the operation of these loads with three-phase unbalanced voltages. (author)

Three hundred patients treated with ultrapulsed 980 nm diode laser for skin disorders

Directory of Open Access Journals (Sweden)

Uwe Wollina

2016-01-01

Full Text Available The use of lasers in skin diseases is quite common. In contrast to other laser types, medical literature about 980 nm ultrapulsed diode laser is sparse in dermatology. Herein, we report the use of ultrapulsed diode 980 nm laser in 300 patients with vascular lesions, cysts and pseudocysts, infectious disease, and malignant tumors. This laser is a versatile tool with excellent safety and efficacy in the hands of the experienced user.

Three Hundred Patients Treated with Ultrapulsed 980 nm Diode Laser for Skin Disorders

Science.gov (United States)

Wollina, Uwe

2016-01-01

The use of lasers in skin diseases is quite common. In contrast to other laser types, medical literature about 980 nm ultrapulsed diode laser is sparse in dermatology. Herein, we report the use of ultrapulsed diode 980 nm laser in 300 patients with vascular lesions, cysts and pseudocysts, infectious disease, and malignant tumors. This laser is a versatile tool with excellent safety and efficacy in the hands of the experienced user. PMID:27688445

Thirty-six pulse rectifier scheme based on zigzag auto-connected transformer

Directory of Open Access Journals (Sweden)

Xiao-Qiang Chen

2016-03-01

Full Text Available In this paper, a low kilo-volt-ampere rating zigzag connected autotransformer based 36-pulse rectifier system supplying vector controlled induction motor drives (VCIMD is designed, modeled and simulated. Detailed design procedure and magnetic rating calculation of the proposed autotransformer and interphase reactor is studied. Moreover, the design process of the autotransformer is modified to make it suitable for retrofit applications. Simulation results confirm that the proposed 36-pulse rectifier system is able to suppress less than 35th harmonics in the utility line current. The influence of load variation and load character is also studied to demonstrate the performance and effectiveness of the proposed 36-pulse rectifiers. A set of power quality indices at AC mains and DC link are presented to compare the performance of 6-, 24- and 36-pulse AC-DC converters.

RFID tag modification for full depth backscatter modulation

Science.gov (United States)

Scott, Jeffrey Wayne [Pasco, WA; Pratt, Richard M [Richland, WA

2010-07-20

A modulated backscatter radio frequency identification device includes a diode detector configured to selectively modulate a reply signal onto an incoming continuous wave; communications circuitry configured to provide a modulation control signal to the diode detector, the diode detector being configured to modulate the reply signal in response to be modulation control signal; and circuitry configured to increase impedance change at the diode detector which would otherwise not occur because the diode detector rectifies the incoming continuous wave while modulating the reply signal, whereby reducing the rectified signal increases modulation depth by removing the reverse bias effects on impedance changes. Methods of improving depth of modulation in a modulated backscatter radio frequency identification device are also provided.

A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

Science.gov (United States)

Hashemi, S Saeid; Sawan, Mohamad; Savaria, Yvon

2012-08-01

We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

Design and test of a 2.25-MW transformer rectifier assembly

Science.gov (United States)

Cormier, R.; Daeges, J.

1989-01-01

A new 2.25-MW transformer rectifier assembly was fabricated for DSS-13 at Goldstone, California. The transformer rectifier will provide constant output power of 2.25 MW at any voltage from 31 kV to 125 kV. This will give a new capability of 1 MW of RF power at X-band, provided appropriate microwave tubes are in the power amplifier. A description of the design and test results is presented.

75 FR 24747 - SCI, LLC/Zener-Rectifier Operations Division A Wholly Owned Subsidiary of SCI, LLC/ON...

Science.gov (United States)

2010-05-05

... DEPARTMENT OF LABOR Employment and Training Administration [TA-W-70,235] SCI, LLC/Zener-Rectifier... Adjustment Assistance on October 19, 2009, applicable to workers of SCI LLC/Zener-Rectifier, Operations... Technical Resources were employed on-site at the Phoenix Arizona location of SCI LLC/Zener-Rectifier...

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

Science.gov (United States)

Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

2017-06-07

We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

Super high voltage Schottky diode with low leakage current for x- and γ-ray detector application

International Nuclear Information System (INIS)

Kosyachenko, L. A.; Sklyarchuk, V. M.; Sklyarchuk, O. F.; Maslyanchuk, O. L.; Gnatyuk, V. A.; Aoki, T.

2009-01-01

A significant improvement in x-/γ-ray detector performance has been achieved by forming both rectifying and near-Ohmic contacts by the deposition of Ni on opposite surfaces of semi-insulating CdTe crystals pretreated by special chemical etching and Ar-ion bombardment with different parameters. The reduced injection of the minority carriers from the near-Ohmic contact in the neutral part of the diode provides low leakage current even at high bias ( 2 at 2000 V and 293 K). The electrical properties of the detectors are well described quantitatively by the generation-recombination Sah-Noyce-Shockley theory excepting the high reverse voltage range where some injection of minority carriers takes place

High power CW output from low confinement asymmetric structure diode laser

NARCIS (Netherlands)

Iordache, G.; Buda, M.; Acket, G.A.; Roer, van de T.G.; Kaufmann, L.M.F.; Karouta, F.; Jagadish, C.; Tan, H.H.

1999-01-01

High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 µm wide stripe 1-3 mm long diode lasers were studied. 1.8 W

Three-phase Photovoltaic Systems

DEFF Research Database (Denmark)

Kerekes, Tamas; Sera, Dezso; Máthé, Lászlo

2015-01-01

, detailing the different photovoltaic inverter structures and topologies as well as discussing the different control layers within a grid-connected photovoltaic plant. Modulation schemes for various photovoltaic inverter topologies, grid synchronization, current control, active and reactive power control......Photovoltaic technology has experienced unprecedented growth in the last two decades, transforming from mainly off-grid niche generation to a major renewable energy technology, reaching approximately 180 GW of capacity worldwide at the end of 2014. Large photovoltaic power plants interfacing...... the grid through a three-phase power electronic converter are now well on the way to becoming a major player in the power system in many countries. Therefore, this article gives an overview of photovoltaic systems with a focus on three-phase applications, presenting these both from a hardware point of view...

2011 NOAA Ortho-rectified Mosaic of Galveston, Texas

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

NARCIS (Netherlands)

Lee, J.; Breemen, A.J.J.M. van; Khikhlovskyi, V.; Kemerink, M.; Janssen, R.A.J.; Gelinck, G.H.

2016-01-01

We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism

Competitive inhibition can linearize dose-response and generate a linear rectifier.

Science.gov (United States)

Savir, Yonatan; Tu, Benjamin P; Springer, Michael

2015-09-23

Many biological responses require a dynamic range that is larger than standard bi-molecular interactions allow, yet the also ability to remain off at low input. Here we mathematically show that an enzyme reaction system involving a combination of competitive inhibition, conservation of the total level of substrate and inhibitor, and positive feedback can behave like a linear rectifier-that is, a network motif with an input-output relationship that is linearly sensitive to substrate above a threshold but unresponsive below the threshold. We propose that the evolutionarily conserved yeast SAGA histone acetylation complex may possess the proper physiological response characteristics and molecular interactions needed to perform as a linear rectifier, and we suggest potential experiments to test this hypothesis. One implication of this work is that linear responses and linear rectifiers might be easier to evolve or synthetically construct than is currently appreciated.

Diode-pumped cw Nd:YAG three-level laser at 869 nm.

Science.gov (United States)

Lü, Yanfei; Xia, Jing; Cheng, Weibo; Chen, Jifeng; Ning, Guobin; Liang, Zuoliang

2010-11-01

We report for the first time (to our knowledge) a diode-pumped Nd:YAG laser emitting at 869 nm based on the (4)F(3/2)-(4)I(9/2) transition, generally used for a 946 nm emission. Power of 453 mW at 869 nm has been achieved in cw operation with a fiber-coupled laser diode emitting 35.4 W at 809 nm. Intracavity second-harmonic generation in the cw mode has also been demonstrated with power of 118 mW at 435 nm by using a BiB(3)O(6) nonlinear crystal. In our experiment, we used a LiNbO(3) crystal lens to complement the thermal lens of the laser rod, and we obtained good beam quality and high output power stability.

A New Topology for Interline Dynamic Voltage Restorer Based on Direct Three-Phase Converter

Directory of Open Access Journals (Sweden)

E. Babaei

2016-03-01

Full Text Available In this paper, a new topology for Interline Dynamic Voltage Restorer (IDVR is proposed. This topology contains two direct three-phase converters which have been connected together by a common fictitious dc-link. According to the kind of the disturbances, both of the converters can be employed as a rectifier or inverter. The converters receive the required compensation energy from the gird through the direct link which is provided by the dual-proposed switches. Due to the lack of the huge storage elements, the practical prototype of the proposed topology is more economical in comparison with the traditional structure. Moreover, compensating for long time duration is possible due to the unlimited eternal energy which is provided from the grids. The low volume, cost and weight are the additional features of the proposed topology in comparison with traditional types. This topology is capable to compensate both of the balanced and unbalanced disturbances. Furthermore, restoring the deep sags and power outages will be possible with the support from the other grid. Unlike the conventional topologies, the capability of compensation is independent from the power flow and the power factor of each grid. The performance of the proposed IDVR topology is validated by computer simulation with PSCAD/EMTDC software.

An Integrated Power-Efficient Active Rectifier With Offset-Controlled High Speed Comparators for Inductively Powered Applications

Science.gov (United States)

Lee, Hyung-Min; Ghovanloo, Maysam

2011-01-01

We present an active full-wave rectifier with offset-controlled high speed comparators in standard CMOS that provides high power conversion efficiency (PCE) in high frequency (HF) range for inductively powered devices. This rectifier provides much lower dropout voltage and far better PCE compared to the passive on-chip or off-chip rectifiers. The built-in offset-control functions in the comparators compensate for both turn-on and turn-off delays in the main rectifying switches, thus maximizing the forward current delivered to the load and minimizing the back current to improve the PCE. We have fabricated this active rectifier in a 0.5-μm 3M2P standard CMOS process, occupying 0.18 mm2 of chip area. With 3.8 V peak ac input at 13.56 MHz, the rectifier provides 3.12 V dc output to a 500 Ω load, resulting in the PCE of 80.2%, which is the highest measured at this frequency. In addition, overvoltage protection (OVP) as safety measure and built-in back telemetry capabilities have been incorporated in our design using detuning and load shift keying (LSK) techniques, respectively, and tested. PMID:22174666

Conduction and rectification in NbO _x - and NiO-based metal-insulator-metal diodes

Energy Technology Data Exchange (ETDEWEB)

Osgood, Richard M.; Giardini, Stephen; Carlson, Joel; Periasamy, Prakash; Guthrey, Harvey; O' Hayre, Ryan; Chin, Matthew; Nichols, Barbara; Dubey, Madan; Fernandes, Gustavo; Kim, Jin Ho; Xu, Jimmy; Parilla, Philip; Berry, Joseph; Ginley, David

2016-09-01

Conduction and rectification in nanoantenna-coupled NbOx- and NiO-based metal-insulator-metal (MIM) diodes ('nanorectennas') are studied by comparing new theoretical predictions with the measured response of nanorectenna arrays. A new quantum mechanical model is reported and agrees with measurements of current-voltage (I-V) curves, over 10 orders of magnitude in current density, from [NbOx(native)-Nb2O5]- and NiO-based samples with oxide thicknesses in the range of 5-36 nm. The model, which introduces new physics and features, including temperature, electron effective mass, and image potential effects using the pseudobarrier technique, improves upon widely used earlier models, calculates the MIM diode's I-V curve, and predicts quantitatively the rectification responsivity of high frequency voltages generated in a coupled nanoantenna array by visible/near-infrared light. The model applies both at the higher frequencies, when high-energy photons are incident, and at lower frequencies, when the formula for classical rectification, involving derivatives of the I-V curve, may be used. The rectified low-frequency direct current is well-predicted in this work's model, but not by fitting the experimentally measured I-V curve with a polynomial or by using the older Simmons model (as shown herein). By fitting the measured I-V curves with our model, the barrier heights in Nb-(NbOx(native)-Nb2O5)-Pt and Ni-NiO-Ti/Ag diodes are found to be 0.41/0.77 and 0.38/0.39 eV, respectively, similar to literature reports, but with effective mass much lower than the free space value. The NbOx (native)-Nb2O5 dielectric properties improve, and the effective Pt-Nb2O5 barrier height increases as the oxide thickness increases. An observation of direct current of ~4 nA for normally incident, focused 514 nm continuous wave laser beams are reported, similar in magnitude to recent reports. This measured direct current is compared to the prediction for rectified direct current

Single-phase DECT with VNCT compared with three-phase CTU in patients with haematuria

Energy Technology Data Exchange (ETDEWEB)

Park, Jung Jae; Park, Byung Kwan; Kim, Chan Kyo [Sungkyunkwan University School of Medicine, Department of Radiology, Samsung Medical Center, Seoul (Korea, Republic of)

2016-10-15

To retrospectively evaluate the diagnostic performance of single-phase dual-energy CT (DECT) with virtual non-contrast CT (VNCT) compared with three-phase CT urography (CTU) in patients with haematuria. A total of 296 patients underwent three-phase CTU (NCT at 120 kVp; nephrographic phase and excretory phase DECTs at 140 kVp and 80 kVp) owing to haematuria. Diagnostic performances of CT scans were compared for detecting urothelial tumours and urinary stones. Dose-length product (DLP) was compared in relation to single-phase DECT and three-phase CTU Dose-length product (DLP) was compared in relation to single-phase DECT and three-phase CTU. Sensitivity and specificity for tumour were 95 % (19/20) and 98.9 % (273/276) on CTU, 95 % (19/20) and 98.2 % (271/276) on nephrographic phase DECT, and 90 % (18/20) and 98.2 % (271/276) on excretory phase DECT (P > 0.1). Of the 148 stones detected on NCT, 108 (73 %) and 100 (67.6 %) were detected on nephrographic phase and excretory phase VNCTs, respectively. The mean size of stones undetected on nephrographic and excretory VNCTs was measured as 1.5 ± 0.5 mm and 1.6 ± 0.6 mm, respectively. The mean DLPs of three-phase CTU, nephrographic phase DECT and excretory phase DECT were 1076 ± 248 mGy . cm, 410 ± 98 mGy . cm, and 360 ± 87 mGy . cm, respectively (P < 0.001). Single-phase DECT has a potential to replace three-phase CTU for detecting tumours with a lower radiation dose. (orig.)

A cascaded three-phase symmetrical multistage voltage multiplier

International Nuclear Information System (INIS)

Iqbal, Shahid; Singh, G K; Besar, R; Muhammad, G

2006-01-01

A cascaded three-phase symmetrical multistage Cockcroft-Walton voltage multiplier (CW-VM) is proposed in this report. It consists of three single-phase symmetrical voltage multipliers, which are connected in series at their smoothing columns like string of batteries and are driven by three-phase ac power source. The smoothing column of each voltage multiplier is charged twice every cycle independently by respective oscillating columns and discharged in series through load. The charging discharging process completes six times a cycle and therefore the output voltage ripple's frequency is of sixth order of the drive signal frequency. Thus the proposed approach eliminates the first five harmonic components of load generated voltage ripples and sixth harmonic is the major ripple component. The proposed cascaded three-phase symmetrical voltage multiplier has less than half the voltage ripple, and three times larger output voltage and output power than the conventional single-phase symmetrical CW-VM. Experimental and simulation results of the laboratory prototype are given to show the feasibility of proposed cascaded three-phase symmetrical CW-VM

Reconfigurable Resonant Regulating Rectifier With Primary Equalization for Extended Coupling- and Loading-Range in Bio-Implant Wireless Power Transfer.

Science.gov (United States)

Li, Xing; Meng, Xiaodong; Tsui, Chi-Ying; Ki, Wing-Hung

2015-12-01

Wireless power transfer using reconfigurable resonant regulating (R(3)) rectification suffers from limited range in accommodating varying coupling and loading conditions. A primary-assisted regulation principle is proposed to mitigate these limitations, of which the amplitude of the rectifier input voltage on the secondary side is regulated by accordingly adjusting the voltage amplitude Veq on the primary side. A novel current-sensing method and calibration scheme track Veq on the primary side. A ramp generator simultaneously provides three clock signals for different modules. Both the primary equalizer and the R(3) rectifier are implemented as custom integrated circuits fabricated in a 0.35 μm CMOS process, with the global control implemented in FPGA. Measurements show that with the primary equalizer, the workable coupling and loading ranges are extended by 250% at 120 mW load and 300% at 1.2 cm coil distance compared to the same system without the primary equalizer. A maximum rectifier efficiency of 92.5% and a total system efficiency of 62.4% are demonstrated.

Antiarrhythmic properties of a rapid delayed-rectifier current activator in rabbit models of acquired long QT syndrome

DEFF Research Database (Denmark)

Diness, Thomas G; Yeh, Yung-Hsin; Qi, Xiao Yan

2008-01-01

effect of a novel compound (NS1643) that activates the rapid delayed-rectifier K+ current, I(Kr), in two rabbit models of acquired LQTS. METHODS AND RESULTS: We used two clinically relevant in vivo rabbit models of TdP in which we infused NS1643 or vehicle: (i) three-week atrioventricular block...

System For Characterizing Three-Phase Brushless dc Motors

Science.gov (United States)

Howard, David E.; Smith, Dennis A.

1996-01-01

System of electronic hardware and software developed to automate measurements and calculations needed to characterize electromechanical performances of three-phase brushless dc motors, associated shaft-angle sensors needed for commutation, and associated brushless tachometers. System quickly takes measurements on all three phases of motor, tachometer, and shaft-angle sensor simultaneously and processes measurements into performance data. Also useful in development and testing of motors with not only three phases but also two, four, or more phases.

High accuracy interface characterization of three phase material systems in three dimensions

DEFF Research Database (Denmark)

Jørgensen, Peter Stanley; Hansen, Karin Vels; Larsen, Rasmus

2010-01-01

Quantification of interface properties such as two phase boundary area and triple phase boundary length is important in the characterization ofmanymaterial microstructures, in particular for solid oxide fuel cell electrodes. Three-dimensional images of these microstructures can be obtained...... by tomography schemes such as focused ion beam serial sectioning or micro-computed tomography. We present a high accuracy method of calculating two phase surface areas and triple phase length of triple phase systems from subvoxel accuracy segmentations of constituent phases. The method performs a three phase...... polygonization of the interface boundaries which results in a non-manifold mesh of connected faces. We show how the triple phase boundaries can be extracted as connected curve loops without branches. The accuracy of the method is analyzed by calculations on geometrical primitives...

Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

Science.gov (United States)

Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

2016-06-01

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future “internet of things” viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

First principles design of divacancy defected graphene nanoribbon based rectifying and negative differential resistance device

Energy Technology Data Exchange (ETDEWEB)

Chakrabarty, Soubhik; Wasey, A. H. M. Abdul; Das, G. P., E-mail: msgpd@iacs.res.in, E-mail: ranjit.t@res.srmuniv.ac.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700032 (India); Thapa, Ranjit, E-mail: msgpd@iacs.res.in, E-mail: ranjit.t@res.srmuniv.ac.in [SRM Research Institute, SRM University, Kattankulathur - 603203, Tamil Nadu (India)

2015-08-15

We have studied using density functional theory and non-equilibrium Green’s function based approach, the electronic structures of 555-777 divacancy (DV) defected armchair edged graphene nanoribbons (AGNR) as well as the transport properties of AGNR based two-terminal devices constructed with one defected electrode and one N doped electrode. Introduction of 555-777 DV defect into AGNR results in shifting of the π and π∗ bands towards the higher energy value indicating a downward shift of the Fermi level. Formation of a potential barrier, analogous to that of conventional p-n junction, has been observed across the junction of defected and N-doped AGNR. The two terminal devices show diode like property with high rectifying efficiency for a wide range of bias voltages. The devices also show robust negative differential resistance with very high peak-to-valley ratio. Shift of the electrode energy states and modification of the transmission function with applied bias have been analyzed, in order to gain an insight into the nonlinear and asymmetric behavior of the current-voltage characteristics. Variation of the transport properties on the width of the ribbons has also been discussed.

First principles design of divacancy defected graphene nanoribbon based rectifying and negative differential resistance device

Directory of Open Access Journals (Sweden)

Soubhik Chakrabarty

2015-08-01

Full Text Available We have studied using density functional theory and non-equilibrium Green’s function based approach, the electronic structures of 555-777 divacancy (DV defected armchair edged graphene nanoribbons (AGNR as well as the transport properties of AGNR based two-terminal devices constructed with one defected electrode and one N doped electrode. Introduction of 555-777 DV defect into AGNR results in shifting of the π and π∗ bands towards the higher energy value indicating a downward shift of the Fermi level. Formation of a potential barrier, analogous to that of conventional p-n junction, has been observed across the junction of defected and N-doped AGNR. The two terminal devices show diode like property with high rectifying efficiency for a wide range of bias voltages. The devices also show robust negative differential resistance with very high peak-to-valley ratio. Shift of the electrode energy states and modification of the transmission function with applied bias have been analyzed, in order to gain an insight into the nonlinear and asymmetric behavior of the current-voltage characteristics. Variation of the transport properties on the width of the ribbons has also been discussed.

Update on the slow delayed rectifier potassium current (I(Ks)): role in modulating cardiac function.

Science.gov (United States)

Liu, Zhenzhen; Du, Lupei; Li, Minyong

2012-01-01

The slow delayed rectifier current (I(Ks)) is the slow component of cardiac delayed rectifier current and is critical for the late phase repolarization of cardiac action potential. This current is also an important target for Sympathetic Nervous System (SNS) to regulate the cardiac electivity to accommodate to heart rate alterations in response to exercise or emotional stress and can be up-regulated by β- adrenergic or other signal molecules. I(Ks) channel is originated by the co-assembly of pore-forming KCNQ1 α-subunit and accessory KCNE1 β-subunit. Mutations in any subunit can bring about severe long QT syndrome (LQT-1, LQT-5) as characterized by deliquium, seizures and sudden death. This review summarizes the normal physiological functions and molecular basis of I(Ks) channels, as well as illustrates up-to-date development on its blockers and activators. Therefore, the current extensive survey should generate fundamental understanding of the role of I(Ks) channel in modulating cardiac function and donate some instructions to the progression of I(Ks) blockers and activators as potential antiarrhythmic agents or pharmacological tools to determine the physiological and pathological function of I(Ks).

[Signal analysis and spectrum distortion correction for tunable diode laser absorption spectroscopy system].

Science.gov (United States)

Bao, Wei-Yi; Zhu, Yong; Chen, Jun; Chen, Jun-Qing; Liang, Bo

2011-04-01

In the present paper, the signal of a tunable diode laser absorption spectroscopy (TDLAS) trace gas sensing system, which has a wavelength modulation with a wide range of modulation amplitudes, is studied based on Fourier analysis method. Theory explanation of spectrum distortion induced by laser intensity amplitude modulation is given. In order to rectify the spectrum distortion, a method of synchronous amplitude modulation suppression by a variable optical attenuator is proposed. To validate the method, an experimental setup is designed. Absorption spectrum measurement experiments on CO2 gas were carried out. The results show that the residual laser intensity modulation amplitude of the experimental system is reduced to -0.1% of its original value and the spectrum distortion improvement is 92% with the synchronous amplitude modulation suppression. The modulation amplitude of laser intensity can be effectively reduced and the spectrum distortion can be well corrected by using the given correction method and system. By using a variable optical attenuator in the TDLAS (tunable diode laser absorption spectroscopy) system, the dynamic range requirements of photoelectric detector, digital to analog converter, filters and other aspects of the TDLAS system are reduced. This spectrum distortion correction method can be used for online trace gas analyzing in process industry.

Balanced Current Control Strategy for Current Source Rectifier Stage of Indirect Matrix Converter under Unbalanced Grid Voltage Conditions

Directory of Open Access Journals (Sweden)

Yeongsu Bak

2016-12-01

Full Text Available This paper proposes a balanced current control strategy for the current source rectifier (CSR stage of an indirect matrix converter (IMC under unbalanced grid voltage conditions. If the three-phase grid connected to the voltage source inverter (VSI of the IMC has unbalanced voltage conditions, it affects the currents of the CSR stage and VSI stage, and the currents are distorted. Above all, the distorted currents of the CSR stage cause instability in the overall system, which can affect the life span of the system. Therefore, in this paper, a control strategy for balanced currents in the CSR stage is proposed. To achieve balanced currents in the CSR stage, the VSI stage should receive DC power without ripple components from the CSR stage. This is implemented by controlling the currents in the VSI stage. Therefore, the proposed control strategy decouples the positive and negative phase-sequence components existing in the unbalanced voltages and currents of the VSI stage. Using the proposed control strategy under unbalanced grid voltage conditions, the stability and life span of the overall system can be improved. The effectiveness of the proposed control strategy is verified by simulation and experimental results.

Delayed rectifier potassium channels are involved in SO2 derivative-induced hippocampal neuronal injury.

Science.gov (United States)

Li, Guangke; Sang, Nan

2009-01-01

Recent studies implicate the possible neurotoxicity of SO(2), however, its mechanisms remain unclear. In the present study, we investigated SO(2) derivative-induced effect on delayed rectifier potassium channels (I(K)) and cellular death/apoptosis in primary cultured hippocampal neurons. The results demonstrate that SO(2) derivatives (NaHSO(3) and Na(2)SO(3), 3:1M/M) effectively augmented I(K) and promoted the activation of delayed rectifier potassium channels. Also, SO(2) derivatives increased neuronal death percentage and contributed to the formation of DNA ladder in concentration-dependent manners. Interestingly, the neuronal death and DNA ladder formation, caused by SO(2) derivatives, could be attenuated by the delayed rectifier potassium channel blocker (tetraethylammonium, TEA), but not by the transient outward potassium channel blocker (4-aminopyridine, 4-AP). It implies that stimulating delayed rectifier potassium channels were involved in SO(2) derivative-caused hippocampal neuronal insults, and blocking these channels might be one of the possibly clinical treatment for SO(2)-caused neuronal dysfunction.

Novel Topology of Three-Phase Electric Spring and Its Control

DEFF Research Database (Denmark)

Wang, Qingsong; Cheng, Ming; Jiang, Yunlei

2017-01-01

A novel topology is proposed for three-phase electric spring (TPES) to achieve specific functionalities. With respect to the existing one, the novel topology contains an additional three-phase transformer with the primaries located at the position of the non-critical three-phase load (NCL......) of the existing topology and its secondaries connected to the new three-phase NCL, thus forming a new three-phase smart load (SL). To control the novel topology, the so-called modified δ control utilized for the single-phase electric springs is extended to the three-phase case. Thanks to these solutions, TPES...

Properties of a novel radiophotoluminescent readout system using a cw modulated UV laser diode and phase-sensitive technique

International Nuclear Information System (INIS)

Zhao, C.; Kurobori, T.; Miyamoto, Y.; Yamamoto, T.

2011-01-01

We have proposed and constructed a novel readout system for measuring a dose-dependent radiophotoluminescence (RPL) signal of a silver-activated phosphate glass dosimeter. The present reader consists of a modulated continuous-wave (cw) ultraviolet (UV) laser diode at 375 nm as an excitation and a phase-sensitive technique using a lock-in amplifier. Preliminary results using a home-made reader are compared with those of the conventional technique based on a combination of a pulsed UV N 2 laser excitation at 337 nm and a photon counting system.

Suitability of integrated protection diodes from diverse semiconductor technologies

NARCIS (Netherlands)

van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

2009-01-01

Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

A Time Difference Method for Measurement of Phase Shift between Distributed Feedback Laser Diode (DFB-LD Output Wavelength and Intensity

Directory of Open Access Journals (Sweden)

Yongning Liu

2015-07-01

Full Text Available A time difference method to conveniently measure the phase shift between output wavelength and intensity of distributed feedback laser diodes (DFB-LDs was proposed. This approach takes advantage of asymmetric absorption positions at the same wavelength during wavelength increase and decrease tuning processes in the intensity-time curve by current modulation. For its practical implementation, a measurement example of phase shift was demonstrated by measuring a time difference between the first time and the second time attendances of the same gas absorption line in the intensity-time curve during one sine or triangle modulation circle. The phase shifts at modulation frequencies ranging from 50 Hz to 50 kHz were measured with a resolution of 0.001π. As the modulation frequency increased the shift value increased with a slowed growth rate.

The influence of melt purification and structure defects on mid-infrared light emitting diodes

CERN Document Server

Krier, A

2003-01-01

Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power at 3.3 mu m and at room temperature have been fabricated by liquid phase epitaxy using Pb as a neutral solvent. Using Pb solution an increase in pulsed output power of between two and three times was obtained compared with InAs light emitting diodes (LEDs) made using rare-earth gettering. The performance improvements were attributed to a reduction in residual carrier concentration arising from the removal of un-intentional donors and structure defects in the InAs active region material. These LEDs are well matched to the CH sub 4 absorption spectrum and potentially could form the basis of a practical infrared CH sub 4 gas sensor.

Agonist of inward rectifier K+ channels enhances the protection of ischemic postconditioning in isolated rat hearts.

Science.gov (United States)

Liao, Z; Feng, Z; Long, C

2014-07-01

Selective inhibition of inward rectifier K + channels could abolish the protection mediated by ischemic preconditioning, but the roles of these channels in ischemic postconditioning have not been well characterized. Our study aims to evaluate the effect of inward rectifier K + channels on the protection induced by ischemic postconditioning. Langendorff-perfused rat hearts (n=8 per group) were split into four groups: postconditioning hearts (IPO group); ischemic postconditioning with BaCl 2 hearts (PB group); ischemic postconditioning with zacopride hearts (PZ group); and without ischemic postconditioning (CON group). After suffering 30 minutes of global ischemia, groups IPO, PB and PZ went through 10 seconds of ischemic postconditioning with three different perfusates: respectively, Krebs-Henseleit buffer (IPO group); 20 μmol/L BaCl 2 (antagonist of the channel, PB group); 1 μmol/L zacopride (agonist of the channel, PZ group). At the end of reperfusion, the myocardial performance was better preserved in the PZ group than the other three groups. The PB group showed no significant differences from the CON group. Our study has shown that the I K1 channel agonist zacopride is associated with the enhancement of ischemic postconditioning. © The Author(s) 2014.

Physics of frequency-modulated comb generation in quantum-well diode lasers

Science.gov (United States)

Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

2018-05-01

We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

Decreased inward rectifier potassium current IK1 in dystrophin-deficient ventricular cardiomyocytes.

Science.gov (United States)

Rubi, Lena; Koenig, Xaver; Kubista, Helmut; Todt, Hannes; Hilber, Karlheinz

2017-03-04

Kir2.x channels in ventricular cardiomyocytes (most prominently Kir2.1) account for the inward rectifier potassium current I K1 , which controls the resting membrane potential and the final phase of action potential repolarization. Recently it was hypothesized that the dystrophin-associated protein complex (DAPC) is important in the regulation of Kir2.x channels. To test this hypothesis, we investigated potential I K1 abnormalities in dystrophin-deficient ventricular cardiomyocytes derived from the hearts of Duchenne muscular dystrophy mouse models. We found that I K1 was substantially diminished in dystrophin-deficient cardiomyocytes when compared to wild type myocytes. This finding represents the first functional evidence for a significant role of the DAPC in the regulation of Kir2.x channels.

Inward rectifier potassium channels in the HL-1 cardiomyocyte-derived cell line.

Science.gov (United States)

Goldoni, Dana; Zhao, YouYou; Green, Brian D; McDermott, Barbara J; Collins, Anthony

2010-11-01

HL-1 is a line of immortalized cells of cardiomyocyte origin that are a useful complement to native cardiomyocytes in studies of cardiac gene regulation. Several types of ion channel have been identified in these cells, but not the physiologically important inward rectifier K(+) channels. Our aim was to identify and characterize inward rectifier K(+) channels in HL-1 cells. External Ba(2+) (100 µM) inhibited 44 ± 0.05% (mean ± s.e.m., n = 11) of inward current in whole-cell patch-clamp recordings. The reversal potential of the Ba(2+)-sensitive current shifted with external [K(+)] as expected for K(+)-selective channels. The slope conductance of the inward Ba(2+)-sensitive current increased with external [K(+)]. The apparent Kd for Ba(2+) was voltage dependent, ranging from 15 µM at -150  mV to 148 µM at -75  mV in 120  mM external K(+). This current was insensitive to 10 µM glybenclamide. A component of whole-cell current was sensitive to 150 µM 4,4'-diisothiocyanatostilbene-2,2'-disulfonic acid (DIDS), although it did not correspond to the Ba(2+)-sensitive component. The effect of external 1 mM Cs(+) was similar to that of Ba(2+). Polymerase chain reaction using HL-1 cDNA as template and primers specific for the cardiac inward rectifier K(ir)2.1 produced a fragment of the expected size that was confirmed to be K(ir)2.1 by DNA sequencing. In conclusion, HL-1 cells express a current that is characteristic of cardiac inward rectifier K(+) channels, and express K(ir)2.1 mRNA. This cell line may have use as a system for studying inward rectifier gene regulation in a cardiomyocyte phenotype. © 2010 Wiley-Liss, Inc.

Conical pinched electron beam diode for intense ion beam source

International Nuclear Information System (INIS)

Matsukawa, Yoshinobu; Nakagawa, Yoshiro

1982-01-01

For the purpose of improvement of the pinched electron beam diode, the production of an ion beam by a diode with electrodes in a conical shape was studied at low voltage operation (--200 kV). The ion beam is emitted from a small region of the diode apex. The mean ion beam current density near the axis at 12 cm from the diode apex is two or three times that from an usual flat parallel diode with the same dimension and impedance. The brightness and the power brightness at the otigin are 450 MA/cm 2 sr and 0.12 TW/cm 2 sr respectively. (author)

Production of ion beam by conical pinched electron beam diode

International Nuclear Information System (INIS)

Matsukawa, Y.; Nakagawa, Y.

1982-01-01

Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)

Harmonic elimination in diode-clamped multilevel inverter using evolutionary algorithms

Energy Technology Data Exchange (ETDEWEB)

Barkati, Said [Laboratoire d' analyse des Signaux et Systemes (LASS), Universite de M' sila, BP. 166, rue Ichbilia 28000 M' sila (Algeria); Baghli, Lotfi [Groupe de Recherche en Electrotechnique et Electronique de Nancy (GREEN), CNRS UMR 7030, Universite Henri Poincare Nancy 1, BP. 239, 54506 Vandoeuvre-les-Nancy (France); Berkouk, El Madjid; Boucherit, Mohamed-Seghir [Laboratoire de Commande des Processus (LCP), Ecole Nationale Polytechnique, BP. 182, 10 Avenue Hassen Badi, 16200 El Harrach, Alger (Algeria)

2008-10-15

This paper describes two evolutionary algorithms for the optimized harmonic stepped-waveform technique. Genetic algorithms and particle swarm optimization are applied to compute the switching angles in a three-phase seven-level inverter to produce the required fundamental voltage while, at the same time, specified harmonics are eliminated. Furthermore, these algorithms are also used to solve the starting point problem of the Newton-Raphson conventional method. This combination provides a very effective method for the harmonic elimination technique. This strategy is useful for different structures of seven-level inverters. The diode-clamped topology is considered in this study. (author)

Proto-I switching and diode studies

International Nuclear Information System (INIS)

Prestwich, K.R.; Miller, P.A.; McDaniel, D.H.; Poukey, J.W.; Widner, M.M.; Goldstein, S.A.

1975-01-01

Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 10 9 cm/s

Rectifier Current Control for an LLC Resonant Converter Based on a Simplified Linearized Model

Directory of Open Access Journals (Sweden)

Zhijian Fang

2018-03-01

Full Text Available In this paper, a rectifier current control for an LLC resonant converter is proposed, based on a simplified, two-order, linearized model that adds a rectifier current feedback inner loop to improve dynamic performance. Compared to the traditional large-signal model with seven resonant states, this paper utilizes a rectifier current state to represent the characteristics of the resonant states, simplifying the LLC resonant model from seven orders to two orders. Then, the rectifier current feedback inner loop is proposed to increase the control system damping, improving dynamic performance. The modeling and design methodology for the LLC resonant converter are also presented in this paper. A frequency analysis is conducted to verify the accuracy of the simplified model. Finally, a 200 W LLC resonant converter prototype is built to verify the effectiveness of the proposed control strategy. Compared to a traditional single-loop controller, the settling time and voltage droop were reduced from 10.8 ms to 8.6 ms and from 6.8 V to 4.8 V, respectively, using the proposed control strategy.

2012 NOAA Ortho-rectified Color Mosaic of Astoria, Oregon

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National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2011 NOAA Ortho-rectified Mosaic of Intracoastal Waterway, Texas

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

2010 NOAA Ortho-rectified Mosaic of Lake Champlain, Vermont

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains ortho-rectified mosaic tiles, created as a product from the NOAA Integrated Ocean and Coastal Mapping (IOCM) initiative. The source imagery...

Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

Science.gov (United States)

Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

2017-03-01

One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

Science.gov (United States)

Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

2017-03-21

One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p + -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

Possibility designing half-wave and full-wave molecular rectifiers by using single benzene molecule

Science.gov (United States)

Abbas, Mohammed A.; Hanoon, Falah H.; Al-Badry, Lafy F.

2018-02-01

This work focused on possibility designing half-wave and full-wave molecular rectifiers by using single and two benzene rings, respectively. The benzene rings were threaded by a magnetic flux that changes over time. The quantum interference effect was considered as the basic idea in the rectification action, the para and meta configurations were investigated. All the calculations are performed by using steady-state theoretical model, which is based on the time-dependent Hamiltonian model. The electrical conductance and the electric current are considered as DC output signals of half-wave and full-wave molecular rectifiers. The finding in this work opens up the exciting potential to use these molecular rectifiers in molecular electronics.

Probabilistic physical characteristics of phase transitions at highway bottlenecks: incommensurability of three-phase and two-phase traffic-flow theories.

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Kerner, Boris S; Klenov, Sergey L; Schreckenberg, Michael

2014-05-01

Physical features of induced phase transitions in a metastable free flow at an on-ramp bottleneck in three-phase and two-phase cellular automaton (CA) traffic-flow models have been revealed. It turns out that at given flow rates at the bottleneck, to induce a moving jam (F → J transition) in the metastable free flow through the application of a time-limited on-ramp inflow impulse, in both two-phase and three-phase CA models the same critical amplitude of the impulse is required. If a smaller impulse than this critical one is applied, neither F → J transition nor other phase transitions can occur in the two-phase CA model. We have found that in contrast with the two-phase CA model, in the three-phase CA model, if the same smaller impulse is applied, then a phase transition from free flow to synchronized flow (F → S transition) can be induced at the bottleneck. This explains why rather than the F → J transition, in the three-phase theory traffic breakdown at a highway bottleneck is governed by an F → S transition, as observed in real measured traffic data. None of two-phase traffic-flow theories incorporates an F → S transition in a metastable free flow at the bottleneck that is the main feature of the three-phase theory. On the one hand, this shows the incommensurability of three-phase and two-phase traffic-flow theories. On the other hand, this clarifies why none of the two-phase traffic-flow theories can explain the set of fundamental empirical features of traffic breakdown at highway bottlenecks.

High Power Ga2O3-based Schottky Diode, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR Program will develop a new generation of radiation hard high-power high-voltage Ga2O3-based Schottky diode, which is suitable for applications in the space...

Toward a nanoimprinted nanoantenna to perform optical rectification through molecular diodes

Science.gov (United States)

Reynaud, C. A.; Duché, D.; Ruiz, C. M.; Palanchoke, U.; Patrone, L.; Le Rouzo, J.; Labau, S.; Frolet, N.; Gourgon, C.; Alfonso, C.; Charaï, A.; Lebouin, C.; Simon, J.-J.; Escoubas, L.

2017-12-01

This work presents investigations about the realization and modelization of rectenna solar cells. Rectennas are antennas coupled with a rectifier to convert the alternative current originating from the antenna into direct current that can be harvested and stored. By reducing the size of the antennas to the nanoscale, interactions with visible and near-infrared light become possible. If techniques such as nanoimprint lithography make possible the fabrication of sufficiently small plasmonic structures to act as optical antennas, the concept of rectenna still faces several challenges. One of the most critical point is to achieve rectification at optical frequencies. To address this matter, we propose to use molecular diodes (ferrocenyl-alkanethiol) that can be self-assembled on metallic surfaces such as gold or silver. In this paper, we present a basic rectenna theory as well as finite-difference time-domain (FDTD) optical simulations of plasmonic structures and experimental results of both nanoimprint fabrication of samples and characterizations by electron microscopy, Raman spectroscopy, and cyclic voltammetry techniques.

Inelastic transport and low-bias rectification in a single-molecule diode.

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Hihath, Joshua; Bruot, Christopher; Nakamura, Hisao; Asai, Yoshihiro; Díez-Pérez, Ismael; Lee, Youngu; Yu, Luping; Tao, Nongjian

2011-10-25

Designing, controlling, and understanding rectification behavior in molecular-scale devices has been a goal of the molecular electronics community for many years. Here we study the transport behavior of a single molecule diode, and its nonrectifying, symmetric counterpart at low temperatures, and at both low and high biases to help elucidate the electron-phonon interactions and transport mechanisms in the rectifying system. We find that the onset of current rectification occurs at low biases, indicating a significant change in the elastic transport pathway. However, the peaks in the inelastic electron tunneling (IET) spectrum are antisymmetric about zero bias and show no significant changes in energy or intensity in the forward or reverse bias directions, indicating that despite the change in the elastic transmission probability there is little impact on the inelastic pathway. These results agree with first principles calculations performed to evaluate the IETS, which also allow us to identify which modes are active in the single molecule junction.

Thermal analysis and improvement of cascode GaN device package for totem-pole bridgeless PFC rectifier

International Nuclear Information System (INIS)

She, Shuojie; Zhang, Wenli; Liu, Zhengyang; Lee, Fred C.; Huang, Xiucheng; Du, Weijing; Li, Qiang

2015-01-01

The totem-pole bridgeless power factor correction (PFC) rectifier has a simpler topology and higher efficiency than other boost-type bridgeless PFC rectifiers. Its promising performance is enabled by using high-voltage gallium nitride (GaN) high-electron-mobility transistors, which have considerably better figures of merit (e.g., lower reverse recovery charges and less switching losses) than the state-of-the-art silicon metal-oxide-semiconductor field-effect transistors. Cascode GaN devices in traditional packages, i.e., the TO-220 and power quad flat no-lead, are used in the totem-pole PFC boost rectifier. But the parasitic inductances induced by the traditional packages not only significantly deteriorate the switching characteristics of the discrete GaN device but also adversely affect the performance of the built PFC rectifier. A new stack-die packaging structure with an embedded capacitor has been introduced and proven to be efficient in reducing parasitic ringing at the turn-off transition and achieving true zero-voltage-switching turn-on. However, the thermal dissipation capability of the device packaged in this configuration becomes a limitation on further pushing the operating frequency and the output current level for high-efficiency power conversion. This paper focuses on the thermal analysis of the cascode GaN devices in different packages and the GaN-based multichip module used in a two-phase totem-pole bridgeless PFC boost rectifier. A series of thermal models are built based on the actual structures and materials of the packaged devices to evaluate their thermal performance. Finite element analysis (FEA) simulation results of the cascode GaN device in a flip-chip format demonstrate the possibility of increasing the device switching speed while maintaining the peak temperature of the device below 125 °C. Thermal analysis of the GaN-based power module in a very similar structure is also conducted using the FEA method. Experimental data measured using

Charge percolation pathways in polymer blend photovoltaic diodes with sub-mesoscopic two-phase microstructures

Science.gov (United States)

Dou, Fei; Silva, Carlos; Zhang, Xinping

2013-05-01

We find that the external quantum efficiency of photovoltaic diodes based on finely mixed blends of poly-9,9’-dioctylfluorene-co-bis-N,N’-(4-butylphenyl)-bis-N,N’-phenyl-l,4-phenylenediamine (PFB) and poly-9,9’- dioctylfluorene-co-benzothiadiazole (F8BT) depends strongly on the blend ratio. The peak external quantum efficiency is optimum for a PFB:F8BT ratio of 3:1. The difference of peak efficiency for this composition and a 1:1 ratio is significantly higher than the reported yield of charge-transfer excitons. From a surface topography analysis, we believe that charge percolation plays a crucial role in photocurrent efficiency in PFB:F8BT diodes. Furthermore, we present a qualitative model for different charge percolation pathways in diodes of different blend ratios.

Ion divergence in magnetically insulated diodes

International Nuclear Information System (INIS)

Slutz, S.A.; Lemke, R.W.; Pointon, T.D.; Desjarlais, M.P.; Johnson, D.J.; Mehlhorn, T.A.; Filuk, A.; Bailey, J.

1995-01-01

Magnetically insulated ion diodes are being developed to drive inertial confinement fusion. Ion beam microdivergence must be reduced to achieve the very high beam intensities required to achieve this goal. Three-dimensional particle-in-cell simulations indicate that instability induced fluctuations can produce significant ion divergence during acceleration. These simulations exhibit a fast growing mode early in time, which has been identified as the diocotron instability. The divergence generated by this mode is modest due to the relatively high frequency (>1GHz). Later, a low-frequency low-phase-velocity instability develops. This instability couples effectively to the ions, since the frequency is approximately the reciprocal of the ion transit time, and can generate unacceptably large ion divergences (>30 mrad). Linear stability theory reveals that this mode requires perturbations parallel to the applied magnetic field and is related to the modified two stream instability. Measurements of ion density fluctuations and energy-momentum correlations have confirmed that instabilities develop in ion diodes and contribute to the ion divergence. In addition, spectroscopic measurements indicate that the ions have a significant transverse temperature very close to the emission surface. Passive lithium fluoride (LiF) anodes have larger transverse beam temperatures than laser irradiated active sources. Calculations of source divergence expected from the roughness of LiF surfaces and the possible removal of this layer is presented

A new route for the synthesis of graphene oxide–Fe3O4 (GO–Fe3O4) nanocomposites and their Schottky diode applications

International Nuclear Information System (INIS)

Metin, Önder; Aydoğan, Şakir; Meral, Kadem

2014-01-01

Highlights: • Graphene Oxide (GO)–Fe 3 O 4 nanocomposites were prepared by a novel and facile method. • The successful assembly of Fe 3 O 4 NPs onto GO sheets was displayed by TEM. • The GO–Fe 3 O 4 nanocomposites/p-Si junction showed good rectifying property. -- Abstract: Addressed herein is a facile method for the preparation of magnetic graphene oxide–Fe 3 O 4 (GO–Fe 3 O 4 ) nanocomposites and the rectifying properties of (GO–Fe 3 O 4 )/p-Si junction in a Schottky diode. GO–Fe 3 O 4 nanocomposites were prepared by a novel method in which as-prepared GO sheets were decorated with the monodisperse Fe 3 O 4 nanoparticles (NPs) in dimethylformamide/chloroform mixture via a sonication process. The successful assembly of Fe 3 O 4 NPs onto GO sheets was displayed by transmission electron microscopy (TEM). Inductively couple plasma optical emission spectroscopy (ICP-OES) analysis of the GO–Fe 3 O 4 nanocomposite showed that the nanocomposite consists of 20.1 wt% Fe 3 O 4 NPs which provides a specific saturation magnetization (Ms) as 16 emu/g. The current–voltage (I–V) characteristics of the (GO–Fe 3 O 4 )/p-Si junction in a Schottky diode were studied in the temperature range of 50–350 K in the steps of 25 K. It was determined that the barrier height and ideality factor of the Au/GO–Fe 3 O 4 /p-Si/Al Schottky diode were depended on temperature as the barrier height increased while the ideality factor decreased with increasing temperature. The experimental values of barrier height and ideality factor were varied from 0.12 eV and 11.24 at 50 K to 0.76 eV and 2.49 at 350 K, respectively. The Richardson plot exhibited non-linearity at low temperatures that was attributed to the barrier inhomogeneities prevailing at the GO–Fe 3 O 4 /p-Si junction

Enhancement of delayed-rectifier potassium conductance by low concentrations of local anaesthetics in spinal sensory neurones

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