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Sample records for thin-film solid-oxide fuel

  1. Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

    DEFF Research Database (Denmark)

    Reolon, R. P.; Sanna, S.; Xu, Yu

    2018-01-01

    A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte......, electrochemical performances are steady, indicating the stability of the cell. Under electrical load, a progressive degradation is activated. Post-test analysis reveals both mechanical and chemical degradation of the cell. Cracks and delamination of the thin films promote a significant nickel diffusion and new...

  2. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  3. Solid Oxide Fuel Cell Based Upon Colloidal Deposition of Thin Films for Lower Temperature Operation (Preprint)

    National Research Council Canada - National Science Library

    Reitz, T. L; Xiao, H

    2006-01-01

    In order to reduce the operating temperature of solid oxide fuel cells (SOFCs), anode-supported cells incorporating thin film electrolytes in conjunction with anode/electrolyte and cathode/electrolyte interlayers were studied...

  4. Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

    Science.gov (United States)

    Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

    2014-06-01

    A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

  5. TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Minh; Kurt Montgomery

    2004-10-01

    This report summarizes the work performed by Hybrid Power Generation Systems, LLC during the Phases I and II under Contract DE-AC26-00NT40705 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Tape Calendering Manufacturing Process For Multilayer Thin-Film Solid Oxide Fuel Cells''. The main objective of this project was to develop the manufacturing process based on tape calendering for multilayer solid oxide fuel cells (SOFC's) using the unitized cell design concept and to demonstrate cell performance under specified operating conditions. Summarized in this report is the development and improvements to multilayer SOFC cells and the unitized cell design. Improvements to the multilayer SOFC cell were made in electrochemical performance, in both the anode and cathode, with cells demonstrating power densities of nearly 0.9 W/cm{sup 2} for 650 C operation and other cell configurations showing greater than 1.0 W/cm{sup 2} at 75% fuel utilization and 800 C. The unitized cell design was matured through design, analysis and development testing to a point that cell operation at greater than 70% fuel utilization was demonstrated at 800 C. The manufacturing process for both the multilayer cell and unitized cell design were assessed and refined, process maps were developed, forming approaches explored, and nondestructive evaluation (NDE) techniques examined.

  6. Synthesis and characterization of electrolyte-grade 10%Gd-doped ceria thin film/ceramic substrate structures for solid oxide fuel cells

    DEFF Research Database (Denmark)

    Chourashiya, M. G.; Bharadwaj, S. R.; Jadhav, L. D.

    2010-01-01

    In the present research, spray pyrolysis technique is employed to synthesize 10%Gd-doped ceria (GDC) thin films on ceramic substrates with an intention to use the "film/substrate" structure in solid oxide fuel cells. GDC films deposited on GDC substrate showed enhanced crystallite formation....... In case of NiO-GDC composite substrate, the thickness of film was higher (∼ 13 μm) as compared to the film thickness on GDC substrate (∼ 2 μm). The relative density of the films deposited on both the substrates was of the order of 95%. The impedance measurements revealed that ionic conductivity of GDC...

  7. Influence of annealing on texture properties of cerium oxide thin films

    International Nuclear Information System (INIS)

    Arunkumar, P.; Suresh Babu, K.; Ramaseshan, R.; Dash, S.

    2013-01-01

    Future power demand needs an energy source with higher efficiency, better power density, clean energy and fuel flexibility. Solid oxide fuel cell (SOFC) is one of the potential sources for future needs. Though the polymer and direct methanol based electrolyte are much suitable, for versatile applications (portable devices) they are having major challenges such as design, platinum based catalyst, lower power density and fuel flexibility (free from hydrocarbons). However, in SOFC the high operating temperature is the only major issue. Operating temperature of SOFC could be reduced by proper selection of electrolyte material which should have minimum ionic conductivity of 0.1 Scm -1 at reduced activation energy. This can be achieved by thin film based doped cerium oxide electrolyte for SOFC, leads to Intermediate Temperature Solid Oxide Fuel Cell (ITSOFC). In the present work, we focus on the synthesis of cerium oxide and 20 mol % samarium doped cerium oxide (SDC) nanoparticles by co-precipitation method and to synthesis thin films of the same. Pellets of those powders were heat treated at different temperatures and used as targets for e-beam evaporation to fabricate thin film based electrolyte. Stoichiometry of both powders and thin films were confirmed by XRF and EPMA. GIXRD profiles of ceria and SDC thin films are shown below and a preferred orientation effect is observed in SDC films. In SDC films the X-ray peaks have a shift towards lower angles, due to the difference in ionic radii of Ce 4+ and Sm 3+ . The band gap of CeO 2 (2.88 eV) from optical absorption technique indicates the presence of Ce 3+ with Ce 4+ , indirectly shows the concentration of oxygen vacancies which is required for the thin film electrolyte

  8. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

  9. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  10. Micromachined Dense Palladium Electrodes for Thin-film Solid Acid Fuel Cells

    NARCIS (Netherlands)

    Unnikrishnan, S.

    2009-01-01

    This thesis paves the way towards the microfabrication of a solid acid electrolyte based fuel cell (µSAFC), which has a membrane electrode assembly (MEA) consisting of a thin-film of water soluble electrolyte encapsulated between two dense palladium electrode membranes. This project work

  11. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Final Technical Report (October 2000 - December 2003)

    International Nuclear Information System (INIS)

    Jie Guan; Nguyen Minh

    2003-01-01

    This report summarizes the results of the work conducted under the program: ''Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells'' under contract number DE-AC26-00NT40711. The program goal is to advance materials and processes that can be used to produce economical, high-performance solid oxide fuel cells (SOFC) capable of achieving extraordinary high power densities at reduced temperatures. Under this program, anode-supported thin electrolyte based on lanthanum gallate (LSMGF) has been developed using tape-calendering process. The fabrication parameters such as raw materials characteristics, tape formulations and sintering conditions have been evaluated. Dense anode supported LSGMF electrolytes with thickness range of 10-50 micron have been fabricated. High performance cathode based on Sr 0.5 Sm 0.5 CoO 3 (SSC) has been developed. Polarization of ∼0.23 ohm-cm 2 has been achieved at 600 C with Sr 0.5 Sm 0.5 CoO 3 cathode. The high-performance SSC cathode and thin gallate electrolyte have been integrated into single cells and cell performance has been characterized. Tested cells to date generally showed low performance because of low cell OCVs and material interactions between NiO in the anode and lanthanum gallate electrolyte

  12. Inkjet-Printed Porous Silver Thin Film as a Cathode for a Low-Temperature Solid Oxide Fuel Cell.

    Science.gov (United States)

    Yu, Chen-Chiang; Baek, Jong Dae; Su, Chun-Hao; Fan, Liangdong; Wei, Jun; Liao, Ying-Chih; Su, Pei-Chen

    2016-04-27

    In this work we report a porous silver thin film cathode that was fabricated by a simple inkjet printing process for low-temperature solid oxide fuel cell applications. The electrochemical performance of the inkjet-printed silver cathode was studied at 300-450 °C and was compared with that of silver cathodes that were fabricated by the typical sputtering method. Inkjet-printed silver cathodes showed lower electrochemical impedance due to their porous structure, which facilitated oxygen gaseous diffusion and oxygen surface adsorption-dissociation reactions. A typical sputtered nanoporous silver cathode became essentially dense after the operation and showed high impedance due to a lack of oxygen supply. The results of long-term fuel cell operation show that the cell with an inkjet-printed cathode had a more stable current output for more than 45 h at 400 °C. A porous silver cathode is required for high fuel cell performance, and the simple inkjet printing technique offers an alternative method of fabrication for such a desirable porous structure with the required thermal-morphological stability.

  13. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  14. Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure.

    Science.gov (United States)

    Mukherjee, Kunal; Hayamizu, Yoshiaki; Kim, Chang Sub; Kolchina, Liudmila M; Mazo, Galina N; Istomin, Sergey Ya; Bishop, Sean R; Tuller, Harry L

    2016-12-21

    Highly textured thin films of undoped, Ce-doped, and Sr-doped Pr 2 CuO 4 were synthesized on single crystal YSZ substrates using pulsed laser deposition to investigate their area-specific resistance (ASR) as cathodes in solid-oxide fuel cells (SOFCs). The effects of T' and T* crystal structures, donor and acceptor doping, and a-axis and c-axis orientation on ASR were systematically studied using electrochemical impedance spectroscopy on half cells. The addition of both Ce and Sr dopants resulted in improvements in ASR in c-axis oriented films, as did the T* crystal structure with the a-axis orientation. Pr 1.6 Sr 0.4 CuO 4 is identified as a potential cathode material with nearly an order of magnitude faster oxygen reduction reaction kinetics at 600 °C compared to thin films of the commonly studied cathode material La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3-δ . Orientation control of the cuprate films on YSZ was achieved using seed layers, and the anisotropy in the ASR was found to be less than an order of magnitude. The rare-earth doped cuprate was found to be a versatile system for study of relationships between bulk properties and the oxygen reduction reaction, critical for improving SOFC performance.

  15. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  16. Specific considerations for obtaining appropriate La1-xSrxGa1-yMgyO3-δ thin films using pulsed-laser deposition and its influence on the performance of solid-oxide fuel cells

    Science.gov (United States)

    Hwang, Jaeyeon; Lee, Heon; Lee, Jong-Ho; Yoon, Kyung Joong; Kim, Hyoungchul; Hong, Jongsup; Son, Ji-Won

    2015-01-01

    To obtain La1-xSrxGa1-yMgyO3-δ (LSGM) thin films with the appropriate properties, pulsed-laser deposition (PLD) is employed, and specific considerations regarding control of the deposition parameters is investigated. It is demonstrated that with a target of stoichiometric composition, appropriate LSGM thin films cannot be produced because of the deviation of the composition from the target to the thin film. Only after adjusting the target composition an LSGM thin film with an appropriate composition and phase can be obtained. The optimized LSGM thin film possesses an electrical conductivity close to that of the bulk LSGM. In contrast, non-optimized thin films do not yield any measurable electrical conductivity. The impact of the optimization of the LSGM thin-film electrolyte on the cell performance is quite significant, in that a solid-oxide fuel cell (SOFC) with an optimized LSGM thin-film electrolyte produces a maximum power density of 1.1 W cm-2 at 600 °C, whereas an SOFC with a non-optimal LSGM thin-film electrolyte is not operable.

  17. Porous La0.6Sr0.4CoO3-δ thin film cathodes for large area micro solid oxide fuel cell power generators

    DEFF Research Database (Denmark)

    Garbayo, A.; Esposito, Vincenzo; Sanna, Simone

    2014-01-01

    Porous La0.6Sr0.4CoO3-δ thin films were fabricated by pulsed laser deposition for being used as a cathode for micro solid oxide fuel cell applications as MEMS power generators. Symmetrical La0.6Sr0.4CoO3-δ/ yttria-stabilized zirconia/La0.6Sr0.4CoO3-δ free-standing membranes were fabricated using ...

  18. Participation of the Third Order Optical Nonlinearities in Nanostructured Silver Doped Zinc Oxide Thin Solid Films

    Directory of Open Access Journals (Sweden)

    C. Torres-Torres

    2012-01-01

    Full Text Available We report the transmittance modulation of optical signals in a nanocomposite integrated by two different silver doped zinc oxide thin solid films. An ultrasonic spray pyrolysis approach was employed for the preparation of the samples. Measurements of the third-order nonlinear optical response at a nonresonant 532 nm wavelength of excitation were performed using a vectorial two-wave mixing. It seems that the separated contribution of the optical nonlinearity associated with each film noticeable differs in the resulting nonlinear effects with respect to the additive response exhibited by the bilayer system. An enhancement of the optical Kerr nonlinearity is predicted for prime number arrays of the studied nanoclusters in a two-wave interaction. We consider that the nanostructured morphology of the thin solid films originates a strong modification of the third-order optical phenomena exhibited by multilayer films based on zinc oxide.

  19. Solid thin film materials for use in thin film charge-coupled devices

    International Nuclear Information System (INIS)

    Lynch, S.J.

    1983-01-01

    Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

  20. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  1. Study of catalysis for solid oxide fuel cells and direct methanol fuel cells

    Science.gov (United States)

    Jiang, Xirong

    Fuel cells offer the enticing promise of cleaner electricity with lower environmental impact than traditional energy conversion technologies. Driven by the interest in power sources for portable electronics, and distributed generation and automotive propulsion markets, active development efforts in the technologies of both solid oxide fuel cell (SOFC) and direct methanol fuel cell (DMFC) devices have achieved significant progress. However, current catalysts for fuel cells are either of low catalytic activity or extremely expensive, presenting a key barrier toward the widespread commercialization of fuel cell devices. In this thesis work, atomic layer deposition (ALD), a novel thin film deposition technique, was employed to apply catalytic Pt to SOFC, and investigate both Pt skin catalysts and Pt-Ru catalysts for methanol oxidation, a very important reaction for DMFC, to increase the activity and utilization levels of the catalysts while simultaneously reducing the catalyst loading. For SOFCs, we explored the use of ALD for the fabrication of electrode components, including an ultra-thin Pt film for use as the electrocatalyst, and a Pt mesh structure for a current collector for SOFCs, aiming for precise control over the catalyst loading and catalyst geometry, and enhancement in the current collect efficiency. We choose Pt since it has high chemical stability and excellent catalytic activity for the O2 reduction reaction and the H2 oxidation reaction even at low operating temperatures. Working SOFC fuel cells were fabricated with ALD-deposited Pt thin films as an electrode/catalyst layer. The measured fuel cell performance reveals that comparable peak power densities were achieved for ALD-deposited Pt anodes with only one-fifth of the Pt loading relative to a DC-sputtered counterpart. In addition to the continuous electrocatalyst layer, a micro-patterned Pt structure was developed via the technique of area selective ALD. By coating yttria-stabilized zirconia, a

  2. Development of planar solid oxide fuel cells for power generation applications

    Energy Technology Data Exchange (ETDEWEB)

    Minh, N.Q. [AlliedSignal Aerospce Equipment Systems, Torrance, CA (United States)

    1996-04-01

    Planar solid oxide fuel cells (SOFCs) are presently being developed for a variety of electric power generation application. The planar design offers simple cell geometry, high power density, and multiple fabrication and gas manifolding options. Planar SOFC technology has received much attention recently, and significant progress has been made in this area. Recent effort at AlliedSignal has focused on the development of high-performance, lightweight planar SOFCs, having thin-electrolyte films, that can be operated efficiently at reduced temperatures (< 1000{degrees}C). The advantages of reduced-temperature operation include wider material choice (including use of metallic interconnects), expected longer cell life, reduced thermal stress, improved reliability, and reduced fuel cell cost. The key aspect in the development of thin-film SIFCs is to incorporate the thin electrolyte layer into the desired structure of cells in a manner that yields the required characteristics. AlliedSignal has developed a simple and cost-effective method based on tape calendering for the fabrication of thin-electrolyte SOFCs. Thin-electrolyte cells made by tape calendering have shown extraordinary performance, e.g., producing more than 500mW/cm{sup 2} at 700{degrees}C and 800mW/cm{sup 2} at 800{degrees}C with hydrogen as fuel and air is oxidant. thin-electrolyte single cells have been incorporated into a compliant metallic stack structure and operated at reduced and operated at reduced-temperature conditions.

  3. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  4. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  5. Magnetron sputtered gadolinia-doped ceria diffusion barriers for metal-supported solid oxide fuel cells

    DEFF Research Database (Denmark)

    Sønderby, Steffen; Klemensø, Trine; Christensen, Bjarke H.

    2014-01-01

    Gadolinia-doped ceria (GDC) thin films are deposited by reactive magnetron sputtering in an industrial-scale setup and implemented as barrier layers between the cathode and electrolyte in metal-based solid oxide fuel cells consisting of a metal support, an electrolyte of ZrO2 co-doped with Sc2O3...

  6. Solid oxide fuel cells fueled with reducible oxides

    Science.gov (United States)

    Chuang, Steven S.; Fan, Liang Shih

    2018-01-09

    A direct-electrochemical-oxidation fuel cell for generating electrical energy includes a cathode provided with an electrochemical-reduction catalyst that promotes formation of oxygen ions from an oxygen-containing source at the cathode, a solid-state reduced metal, a solid-state anode provided with an electrochemical-oxidation catalyst that promotes direct electrochemical oxidation of the solid-state reduced metal in the presence of the oxygen ions to produce electrical energy, and an electrolyte disposed to transmit the oxygen ions from the cathode to the solid-state anode. A method of operating a solid oxide fuel cell includes providing a direct-electrochemical-oxidation fuel cell comprising a solid-state reduced metal, oxidizing the solid-state reduced metal in the presence of oxygen ions through direct-electrochemical-oxidation to obtain a solid-state reducible metal oxide, and reducing the solid-state reducible metal oxide to obtain the solid-state reduced metal.

  7. Multiferroic iron oxide thin films at room temperature

    Czech Academy of Sciences Publication Activity Database

    Gich, M.; Fina, I.; Morelli, Alessio; Sánchez, F.; Alexe, M.; Gazquez, J.; Fontcuberta, J.; Roig, A.

    2014-01-01

    Roč. 26, č. 27 (2014), s. 4645-4652 ISSN 0935-9648 Institutional support: RVO:68378271 Keywords : multiferroic * iron oxide * thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 17.493, year: 2014

  8. Oxide ultrathin films science and technology

    CERN Document Server

    Pacchioni, Gianfranco

    2012-01-01

    A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors T...

  9. Oxidation of ruthenium thin films using atomic oxygen

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin filmsOxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  10. Solid oxide fuel cell having a monolithic core

    International Nuclear Information System (INIS)

    Ackerman, J.P.; Young, J.E.

    1984-01-01

    A solid oxide fuel cell for electrochemically combining fuel and oxidant for generating galvanic output, wherein the cell core has an array of electrolyte and interconnect walls that are substantially devoid of any composite inert materials for support. Instead, the core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material therebetween, and each interconnect wall consists of thin layers of the cathode and anode materials sandwiching a thin layer of interconnect material therebetween. The electrolyte walls are arranged and backfolded between adjacent interconnect walls operable to define a plurality of core passageways alternately arranged where the inside faces thereof have only the anode material or only the cathode material exposed. Means direct the fuel to the anode-exposed core passageways and means direct the oxidant to the cathode-exposed core passageway; and means also direct the galvanic output to an exterior circuit. Each layer of the electrolyte and interconnect materials is of the order of 0.002-0.01 cm thick; and each layer of the cathode and anode materials is of the order of 0.002-0.05 cm thick

  11. Investigation of nanoporous platinum thin films fabricated by reactive sputtering: Application as micro-SOFC electrode

    Science.gov (United States)

    Jung, WooChul; Kim, Jae Jin; Tuller, Harry L.

    2015-02-01

    Highly porous Pt thin films, with nano-scale porosity, were fabricated by reactive sputtering. The strategy involved deposition of thin film PtOx at room temperature, followed by the subsequent decomposition of the oxide by rapid heat treatment. The resulting films exhibited percolating Pt networks infiltrated with interconnected nanosized pores, critical for superior solid oxide fuel cell cathode performance. This approach is particularly attractive for micro-fabricated solid oxide fuel cells, since it enables fabrication of the entire cell stack (anode/electrolyte/cathode) within the sputtering chamber, without breaking vacuum. In this work, the morphological, crystallographic and chemical properties of the porous electrode were systematically varied by control of deposition conditions. Oxygen reduction reaction kinetics were investigated by means of electrochemical impedance spectroscopy, demonstrating the critical role of nano-pores in achieving satisfactory micro-SOFC cathode performance.

  12. A novel direct carbon fuel cell by approach of tubular solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Renzhu; Zhao, Chunhua; Li, Junliang; Zeng, Fanrong; Wang, Shaorong; Wen, Tinglian; Wen, Zhaoyin [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Inorganic Energy Materials and Power Source Engineering Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), 1295 Dingxi Road, Shanghai 200050 (China)

    2010-01-15

    A direct carbon fuel cell based on a conventional anode-supported tubular solid oxide fuel cell, which consisted of a NiO-YSZ anode support tube, a NiO-ScSZ anode functional layer, a ScSZ electrolyte film, and a LSM-ScSZ cathode, has been successfully achieved. It used the carbon black as fuel and oxygen as the oxidant, and a preliminary examination of the DCFC has been carried out. The cell generated an acceptable performance with the maximum power densities of 104, 75, and 47 mW cm{sup -2} at 850, 800, and 750 C, respectively. These results demonstrate the feasibility for carbon directly converting to electricity in tubular solid oxide fuel cells. (author)

  13. A development of solid oxide fuel cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Hee Chun; Lee, Chang Woo [Korea Electric Power Corp. (KEPCO), Taejon (Korea, Republic of). Research Center; Kim, Kwy Youl; Yoon, Moon Soo; Kim, Ho Ki; Kim, Young Sik; Mun, Sung In; Eom, Sung Wuk [Korea Electrotechnology Research Inst., Changwon (Korea, Republic of)

    1996-12-31

    Solid oxide fuel cell which was consisted of ceramics has high power density and is very simple in shape. The project named A development of SOFC(Solid Oxide Fuel Cell) technology is to develop the unit cell fabrication processing and to evaluate the unit cell of solid oxide full cell. In this project, a manufacturing process of cathode by citrate method and polymeric precursor methods were established. By using tape casting method, high density thin electrolyte was manufactured and has high performance. Unit cell composed with La{sub 17}Sr{sub 13}Mn{sub 3} as cathode, 8YSZ electrolyte and 50% NiYSZ anode had a performance of O.85 W/cm{sup 2} and recorded 510 hours operation time. On the basis of these results. 100 cm{sup 2} class unit cell will be fabricated and tests in next program (author). 59 refs., 120 figs.

  14. A development of solid oxide fuel cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Hee Chun; Lee, Chang Woo [Korea Electric Power Corp. (KEPCO), Taejon (Korea, Republic of). Research Center; Kim, Kwy Youl; Yoon, Moon Soo; Kim, Ho Ki; Kim, Young Sik; Mun, Sung In; Eom, Sung Wuk [Korea Electrotechnology Research Inst., Changwon (Korea, Republic of)

    1995-12-31

    Solid oxide fuel cell which was consisted of ceramics has high power density and is very simple in shape. The project named A development of SOFC(Solid Oxide Fuel Cell) technology is to develop the unit cell fabrication processing and to evaluate the unit cell of solid oxide full cell. In this project, a manufacturing process of cathode by citrate method and polymeric precursor methods were established. By using tape casting method, high density thin electrolyte was manufactured and has high performance. Unit cell composed with La{sub 17}Sr{sub 13}Mn{sub 3} as cathode, 8YSZ electrolyte and 50% NiYSZ anode had a performance of O.85 W/cm{sup 2} and recorded 510 hours operation time. On the basis of these results. 100 cm{sup 2} class unit cell will be fabricated and tests in next program (author). 59 refs., 120 figs.

  15. Materials for high temperature solid oxide fuel cells

    International Nuclear Information System (INIS)

    Singhal, S.C.

    1987-01-01

    High temperature solid oxide fuel cells show great promise for economical production of electricity. These cells are based upon the ability of stabilized zirconia to operate as an oxygen ion conductor at elevated temperatures. The design of the tubular solid oxide fuel cell being pursued at Westinghouse is illustrated. The cell uses a calcia-stabilized zironcia porous support tube, which acts both as a structural member onto which the other cell components are fabricated in the form of thin layers, and as a functional member to allow the passage, via its porosity, of air (or oxygen) to the air electrode. This paper summarizes the materials and fabrication processes for the various cell components

  16. Photoinduced hydrophobic surface of graphene oxide thin films

    International Nuclear Information System (INIS)

    Zhang Xiaoyan; Song Peng; Cui Xiaoli

    2012-01-01

    Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

  17. Low temperature solid oxide fuel cells with proton-conducting Y:BaZrO{sub 3} electrolyte on porous anodic aluminum oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Seungbum [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Su, Pei-Chen [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Cha, Suk Won, E-mail: swcha@snu.ac.kr [School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of)

    2013-10-01

    This paper presents the architecture of a nano thin-film yttrium-doped barium zirconate (BYZ) solid-oxide fuel cell that uses nanoporous anodic aluminum oxide (AAO) as a supporting and gas-permeable substrate. The anode was fabricated by sputtering 300 nm platinum thin film that partially covered the AAO surface pores, followed by an additional conformal platinum coating to tune the pore size by atomic layer deposition. Two different nano-porous anode structures with a pore size of 10 nm or 50 nm were deposited. Proton-conducting BYZ ceramic electrolyte with increasing thicknesses of 300, 600, and 900 nm was deposited on top of the platinum anode by pulsed laser deposition, followed by a 200 nm layer of porous Pt sputtered on BYZ electrolyte as a cathode. The open circuit voltage (OCV) of the fuel cells was characterized at 250 °C with 1:1 volumetric stoichiometry of a methanol/water vapor mixture as the fuel. The OCVs were 0.17 V with a 900 nm-thick BYZ electrolyte on 50 nm pores and 0.3 V with a 600 nm-thick BYZ electrolyte on 10 nm pores, respectively, but it increased to 0.8 V for a 900 nm-thick BYZ electrolyte on 10 nm pores, indicating that increasing the film thickness and decreasing a surface pore size help to reduce the number of electrolyte pinholes and the gas leakage through the electrolyte. A maximum power density of 5.6 mW/cm{sup 2} at 250 °C was obtained from the fuel cell with 900 nm of BYZ electrolyte using methanol vapor as a fuel. - Highlights: • A low temperature ceramic fuel cell on nano-porous substrate was demonstrated. • A thin-film yttrium doped barium zirconate (BYZ) was deposited as an electrolyte. • An open circuit voltage (OCV) was measured to verify the BYZ film quality. • An OCV increased by increasing BYZ film thickness and decreasing pore size of anode. • The current–voltage performance was measured using vaporized methanol fuel at 250 °C.

  18. Fabrication of thin yttria-stabilized-zirconia dense electrolyte layers by inkjet printing for high performing solid oxide fuel cells

    DEFF Research Database (Denmark)

    Esposito, Vincenzo; Gadea, Christophe; Hjelm, Johan

    2015-01-01

    In this work, we present how a low-cost HP Deskjet 1000 inkjet printer was used to fabricate a 1.2 mm thin, dense and gas tight 16 cm2 solid oxide fuel cells (SOFC) electrolyte. The electrolyte was printed using an ink made of highly diluted (

  19. Thin Solid Oxide Cell

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material, at least one metal and a catalyst...... material, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same. The present invention also relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous...... cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material and a catalyst material, wherein the electrolyte material is doper zirconia, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same...

  20. Thin film battery/fuel cell power generating system. Final report, Task E-4, April 1976-April 1978

    Energy Technology Data Exchange (ETDEWEB)

    Feduska, W.

    1978-03-31

    A two-year researth program to design and demonstrate the technical feasibility of a high-temperature solid-electrolyte fuel cell is described in detail. A rare-earth chromite, in particular, La /sub 95/Mg /sub 05/Cr /sub 75/Al /sub 25/0/sub 3/ was identified, synthesized by RF-sputtering tested for resistivity, thermal expansion and inertness in contact with yttria-stabilized zirconia, and was found promising as a candidate interconnection material. Films of these interconnection materials have been successfully deposited onto stabilized zirconia tubes by electrochemical vapor deposition (EVD) and the technique has been used to fabricate such films in building fuel cell stacks. Tin-doped indium oxide and antimony-doped tin oxide air electrode current collector materials have been successfully (CVD) chemically vapor deposited, as thin films, onto zirconia tubes. Fabrication procedures for the preparation of thin films of the nickel-cermet fuel electrode and yttria-stabilized zirconia solid electrolyte have been re-verified and improved for use in preparing unit cells and cell stacks on the program. An in-house extrusion technology for porous calcia-stabilized zirconia tubes has been developed and has been used to provide suitable support tubes for component combination samples, unit cell and cell stack sample preparation. Test concepts for component combinations and for unit cells and cell stacks have been evolved, particularly, the crossed electrode technique, and test equipment has been designed, built and used to evaluate fuel cell components and their interfaces. A five-cell fuel cell stack has been fabricated and operated for 700 hours at 200 mA/cm/sup 2/ at 950 to 980/sup 0/C and was subjected to three temperature cycles during the testing. Three series connected cells of this five cell stack met the 80% voltage efficiency final target objective of the program (less than 10% voltage degradation in 700 hours - with only 300 hours required.)

  1. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  2. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  3. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  4. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  5. Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

    International Nuclear Information System (INIS)

    Wadati, H.; Fujimori, A.

    2013-01-01

    Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

  6. Electrolytes for solid oxide fuel cells

    Science.gov (United States)

    Fergus, Jeffrey W.

    The high operating temperature of solid oxide fuel cells (SOFCs), as compared to polymer electrolyte membrane fuel cells (PEMFCs), improves tolerance to impurities in the fuel, but also creates challenges in the development of suitable materials for the various fuel cell components. In response to these challenges, intermediate temperature solid oxide fuel cells (IT-SOFCs) are being developed to reduce high-temperature material requirements, which will extend useful lifetime, improve durability and reduce cost, while maintaining good fuel flexibility. A major challenge in reducing the operating temperature of SOFCs is the development of solid electrolyte materials with sufficient conductivity to maintain acceptably low ohmic losses during operation. In this paper, solid electrolytes being developed for solid oxide fuel cells, including zirconia-, ceria- and lanthanum gallate-based materials, are reviewed and compared. The focus is on the conductivity, but other issues, such as compatibility with electrode materials, are also discussed.

  7. Electrolytes for solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Fergus, Jeffrey W. [Auburn University, Materials Research and Education Center, 275 Wilmore Laboratories, Auburn, AL 36849 (United States)

    2006-11-08

    The high operating temperature of solid oxide fuel cells (SOFCs), as compared to polymer electrolyte membrane fuel cells (PEMFCs), improves tolerance to impurities in the fuel, but also creates challenges in the development of suitable materials for the various fuel cell components. In response to these challenges, intermediate temperature solid oxide fuel cells (IT-SOFCs) are being developed to reduce high-temperature material requirements, which will extend useful lifetime, improve durability and reduce cost, while maintaining good fuel flexibility. A major challenge in reducing the operating temperature of SOFCs is the development of solid electrolyte materials with sufficient conductivity to maintain acceptably low ohmic losses during operation. In this paper, solid electrolytes being developed for solid oxide fuel cells, including zirconia-, ceria- and lanthanum gallate-based materials, are reviewed and compared. The focus is on the conductivity, but other issues, such as compatibility with electrode materials, are also discussed. (author)

  8. Solid Oxide Fuel Cell Experimental Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — NETL’s Solid Oxide Fuel Cell Experimental Laboratory in Morgantown, WV, gives researchers access to models and simulations that predict how solid oxide fuel cells...

  9. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  10. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  11. Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

    Directory of Open Access Journals (Sweden)

    A. Herz

    2016-03-01

    Full Text Available Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO2 evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI oxide (WO3 which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO3 is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO3 nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

  12. Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

    Energy Technology Data Exchange (ETDEWEB)

    Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.; Hentschel, M.; Kups, Th.; Wang, D., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Schaaf, P. [Department of Materials for Electronics and Electrical Engineering, Institute of Materials Science and Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, D-98693 Ilmenau (Germany)

    2016-03-15

    Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

  13. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  14. Deposition of zinc oxide thin films by reactive pulsed laser ablation

    Czech Academy of Sciences Publication Activity Database

    Bílková, Petra; Zemek, Josef; Mitu, B.; Marotta, V.; Orlando, S.

    2006-01-01

    Roč. 252, - (2006), s. 4604-4609 ISSN 0169-4332 Grant - others:NATO-CNR Outreach Fellowships Programm 2001(XE) 219.34 Institutional research plan: CEZ:AV0Z10100521 Keywords : reactive pulsed laser deposition * zinc oxide * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.436, year: 2006

  15. Alternative anode materials for solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Goodenough, John B.; Huang, Yun-Hui [Texas Materials Institute, ETC 9.102, 1 University Station, C2200, The University of Texas at Austin, Austin, TX 78712 (United States)

    2007-11-08

    The electrolyte of a solid oxide fuel cell (SOFC) is an O{sup 2-}-ion conductor. The anode must oxidize the fuel with O{sup 2-} ions received from the electrolyte and it must deliver electrons of the fuel chemisorption reaction to a current collector. Cells operating on H{sub 2} and CO generally use a porous Ni/electrolyte cermet that supports a thin, dense electrolyte. Ni acts as both the electronic conductor and the catalyst for splitting the H{sub 2} bond; the oxidation of H{sub 2} to H{sub 2}O occurs at the Ni/electrolyte/H{sub 2} triple-phase boundary (TPB). The CO is oxidized at the oxide component of the cermet, which may be the electrolyte, yttria-stabilized zirconia, or a mixed oxide-ion/electron conductor (MIEC). The MIEC is commonly a Gd-doped ceria. The design and fabrication of these anodes are evaluated. Use of natural gas as the fuel requires another strategy, and MIECs are being explored for this application. The several constraints on these MIECs are outlined, and preliminary results of this on-going investigation are reviewed. (author)

  16. Gas transport in solid oxide fuel cells

    CERN Document Server

    He, Weidong; Dickerson, James

    2014-01-01

    This book provides a comprehensive overview of contemporary research and emerging measurement technologies associated with gas transport in solid oxide fuel cells. Within these pages, an introduction to the concept of gas diffusion in solid oxide fuel cells is presented. This book also discusses the history and underlying fundamental mechanisms of gas diffusion in solid oxide fuel cells, general theoretical mathematical models for gas diffusion, and traditional and advanced techniques for gas diffusivity measurement.

  17. The main directions in technology investigation of soid oxide fuel cell in Russian Federal Research Center Institute of Physics & Power Engineering (IPPE)

    Energy Technology Data Exchange (ETDEWEB)

    Ievleva, J.I.; Kolesnikov, V.P.; Mezhertisky, G.S. [and others

    1996-04-01

    The main direction of science investigations for creation of efficient solid oxide fuel cells (SOFC) in IPPE are considered in this work. The development program of planar SOFC with thin-film electrolyte is shown. General design schemes of experimental SOFC units are presented. The flow design schemes of processes for initial materials and electrodes fabrication are shown. The results of investigations for creation thin-film solid oxide electrolyte at porous cathode by magnetron sputtering from complex metal target in oxidative environment are presented.

  18. Room temperature inorganic polycondensation of oxide (Cu2O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    International Nuclear Information System (INIS)

    Salek, G.; Tenailleau, C.; Dufour, P.; Guillemet-Fritsch, S.

    2015-01-01

    Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu 2 O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu 2 O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation

  19. Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

    Science.gov (United States)

    Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D. G.; Botton, G. A.; Wei, J. Y. T.

    2018-03-01

    It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7 -δ grown by pulsed laser deposition are annealed at up to 700 atm O2 and 900 ∘C , in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15 -δ and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9 -δ and YBa2Cu6O10 -δ phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7 -δ powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.

  20. Tubular solid oxide fuel cells with porous metal supports and ceramic interconnections

    Science.gov (United States)

    Huang, Kevin [Export, PA; Ruka, Roswell J [Pittsburgh, PA

    2012-05-08

    An intermediate temperature solid oxide fuel cell structure capable of operating at from 600.degree. C. to 800.degree. C. having a very thin porous hollow elongated metallic support tube having a thickness from 0.10 mm to 1.0 mm, preferably 0.10 mm to 0.35 mm, a porosity of from 25 vol. % to 50 vol. % and a tensile strength from 700 GPa to 900 GPa, which metallic tube supports a reduced thickness air electrode having a thickness from 0.010 mm to 0.2 mm, a solid oxide electrolyte, a cermet fuel electrode, a ceramic interconnection and an electrically conductive cell to cell contact layer.

  1. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  2. AlliedSignal solid oxide fuel cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Minh, N.; Barr, K.; Kelly, P.; Montgomery, K. [AlliedSignal Aerospace Equipment Systems, Torrance, CA (United States)

    1996-12-31

    AlliedSignal has been developing high-performance, lightweight solid oxide fuel cell (SOFC) technology for a broad spectrum of electric power generation applications. This technology is well suited for use in a variety of power systems, ranging from commercial cogeneration to military mobile power sources. The AlliedSignal SOFC is based on stacking high-performance thin-electrolyte cells with lightweight metallic interconnect assemblies to form a compact structure. The fuel cell can be operated at reduced temperatures (600{degrees} to 800{degrees}C). SOFC stacks based on this design has the potential of producing 1 kW/kg and 1 ML. This paper summarizes the technical status of the design, manufacture, and operation of AlliedSignal SOFCs.

  3. Crystalline structure and microstructural characteristics of the cathode/electrolyte solid oxide half-cells

    International Nuclear Information System (INIS)

    Chiba, Rubens; Vargas, Reinaldo Azevedo; Andreoli, Marco; Santoro, Thais Aranha de Barros; Seo, Emilia Satoshi Miyamaru

    2009-01-01

    The solid oxide fuel cell (SOFC) is an electrochemical device generating of electric energy, constituted of cathode, electrolyte and anode; that together they form a unity cell. The study of the solid oxide half-cells consisting of cathode and electrolyte it is very important, in way that is the responsible interface for the reduction reaction of the oxygen. These half-cells are ceramic materials constituted of strontium-doped lanthanum manganite (LSM) for the cathode and yttria-stabilized zirconia (YSZ) for the electrolyte. In this work, two solid oxide half-cells have been manufactured, one constituted of LSM cathode thin film on YSZ electrolyte substrate (LSM - YSZ half-cell), and another constituted of LSM cathode and LSM/YSZ composite cathode thin films on YSZ electrolyte substrate (LSM - LSM/YSZ - YSZ half cell). The cathode/electrolyte solid oxide half-cells were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The results have been presented with good adherence between cathode and electrolyte and, LSM and YSZ phases were identified. (author)

  4. Fabrication of Yttria stabilized zirconia thin films on poroussubstrates for fuel cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Leming, Andres [Univ. of California, Berkeley, CA (United States)

    2003-06-16

    A process for the deposition of yttria stabilized zirconia (YSZ) films, on porous substrates, has been developed. These films have possible applications as electrolyte membranes in fuel cells. The films were deposited from colloidal suspensions through the vacuum infiltration technique. Films were deposited on both fully sintered and partially sintered substrates. A critical cracking thickness for the films was identified and strategies are presented to overcome this barrier. Green film density was also examined, and a method for improving green density by changing suspension pH and surfactant was developed. A dependence of film density on film thickness was observed, and materials interactions are suggested as a possible cause. Non-shorted YSZ films were obtained on co-fired substrates, and a cathode supported solid oxide fuel cell was constructed and characterized.

  5. High Performance Nano-Ceria Electrodes for Solid Oxide Cells

    DEFF Research Database (Denmark)

    Graves, Christopher R.; Martinez Aguilera, Lev; Sudireddy, Bhaskar Reddy

    2016-01-01

    forming the active surfaces on a porous backbone with embedded electronic current collector material, yielding one of the highest performances reported for an electrode that operates either on fuel or oxidant. The second is a nano-Ce0.9Gd0.1O2-δ thin film prepared by spin-coating, which provides......In solid oxide electrochemical cells, the conventional Ni-based fuel-electrodes provide high electrocatalytic activity but they are often a major source of long-term performance degradation due to carbon deposition, poisoning of reaction sites, Ni mobility, etc. Doped-ceria is a promising mixed...

  6. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  7. Vacuum-Assisted Low-Temperature Synthesis of Reduced Graphene Oxide Thin-Film Electrodes for High-Performance Transparent and Flexible All-Solid-State Supercapacitors.

    Science.gov (United States)

    Aytug, Tolga; Rager, Matthew S; Higgins, Wesley; Brown, Forrest G; Veith, Gabriel M; Rouleau, Christopher M; Wang, Hui; Hood, Zachary D; Mahurin, Shannon M; Mayes, Richard T; Joshi, Pooran C; Kuruganti, Teja

    2018-04-04

    Simple and easily integrated design of flexible and transparent electrode materials affixed to polymer-based substrates hold great promise to have a revolutionary impact on the functionality and performance of energy storage devices for many future consumer electronics. Among these applications are touch sensors, roll-up displays, photovoltaic cells, health monitors, wireless sensors, and wearable communication devices. Here, we report an environmentally friendly, simple, and versatile approach to produce optically transparent and mechanically flexible all-solid-state supercapacitor devices. These supercapacitors were constructed on tin-doped indium oxide coated polyethylene terephthalate substrates by intercalation of a polymer-based gel electrolyte between two reduced graphene oxide (rGO) thin-film electrodes. The rGO electrodes were fabricated simply by drop-casting of graphene oxide (GO) films, followed by a novel low-temperature (≤250 °C) vacuum-assisted annealing approach for the in situ reduction of GO to rGO. A trade-off between the optical transparency and electrochemical performance is determined by the concentration of the GO in the initial dispersion, whereby the highest capacitance (∼650 μF cm -2 ) occurs at a relatively lower optical transmittance (24%). Notably, the all-solid-state supercapacitors demonstrated excellent mechanical flexibility with a capacity retention rate above 90% under various bending angles and cycles. These attributes underscore the potential of the present approach to provide a path toward the realization of thin-film-based supercapacitors as flexible and transparent energy storage devices for a variety of practical applications.

  8. Room temperature inorganic polycondensation of oxide (Cu{sub 2}O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Salek, G.; Tenailleau, C., E-mail: tenailleau@chimie.ups-tlse.fr; Dufour, P.; Guillemet-Fritsch, S.

    2015-08-31

    Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu{sub 2}O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu{sub 2}O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation.

  9. Direct Coal Oxidation in Modified Solid Oxide Fuel Cells

    DEFF Research Database (Denmark)

    Deleebeeck, Lisa; Gil, Vanesa; Ippolito, Davide

    2017-01-01

    Hybrid direct carbon fuel cells employ a classical solid oxide fuel cell together with carbon dispersed in a carbonate melt on the anode side. In a European project, the utilization of various coals has been investigated with and without addition of an oxidation catalyst to the carbon-carbonate s......Hybrid direct carbon fuel cells employ a classical solid oxide fuel cell together with carbon dispersed in a carbonate melt on the anode side. In a European project, the utilization of various coals has been investigated with and without addition of an oxidation catalyst to the carbon......-carbonate slurry or anode layer. The nature of the coal affects both open circuit voltage and power output. Highest OCV and power densities were observed for bituminous coal and by adding manganese oxide or praseodymium-doped ceria to the carbon/carbonate mixture. Comparing the carbon black fueled performance...... bituminous coal (73 mW/cm2)....

  10. Preparation and characterization of vanadium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

    2013-04-16

    The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

  11. Valence control of cobalt oxide thin films by annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

    2011-02-01

    The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  12. Direct Coal Oxidation in Modified Solid Oxide Fuel Cells

    DEFF Research Database (Denmark)

    Deleebeeck, Lisa; Gil, Vanesa; Ippolito, Davide

    2015-01-01

    Hybrid direct carbon fuel cells employ a classical solid oxide fuel cell together with carbon dispersed in a carbonate melt on the anode side. In a European project, the utilization of various coals has been investigated with and without addition of an oxidation catalyst to the carbon-carbonate s......Hybrid direct carbon fuel cells employ a classical solid oxide fuel cell together with carbon dispersed in a carbonate melt on the anode side. In a European project, the utilization of various coals has been investigated with and without addition of an oxidation catalyst to the carbon......-carbonate slurry or anode layer. The nature of the coal affects both open circuit voltage and power output. Highest OCV and power densities were observed for bituminous coal and by adding manganese oxide or praseodymium-doped ceria to the carbon/carbonate mixture. Comparing the carbon black fueled performance...... bituminous coal (73 mW/cm2). © 2015 ECS - The Electrochemical Society...

  13. DEVELOPMENT OF LOW-COST MANUFACTURING PROCESSES FOR PLANAR, MULTILAYER SOLID OXIDE FUEL CELL ELEMENTS

    Energy Technology Data Exchange (ETDEWEB)

    Scott Swartz; Matthew Seabaugh; William Dawson; Harlan Anderson; Tim Armstrong; Michael Cobb; Kirby Meacham; James Stephan; Russell Bennett; Bob Remick; Chuck Sishtla; Scott Barnett; John Lannutti

    2004-06-12

    This report summarizes the results of a four-year project, entitled, ''Low-Cost Manufacturing Of Multilayer Ceramic Fuel Cells'', jointly funded by the U.S. Department of Energy, the State of Ohio, and by project participants. The project was led by NexTech Materials, Ltd., with subcontracting support provided by University of Missouri-Rolla, Michael A. Cobb & Co., Advanced Materials Technologies, Inc., Edison Materials Technology Center, Gas Technology Institute, Northwestern University, and The Ohio State University. Oak Ridge National Laboratory, though not formally a subcontractor on the program, supported the effort with separate DOE funding. The objective of the program was to develop advanced manufacturing technologies for making solid oxide fuel cell components that are more economical and reliable for a variety of applications. The program was carried out in three phases. In the Phase I effort, several manufacturing approaches were considered and subjected to detailed assessments of manufacturability and development risk. Estimated manufacturing costs for 5-kW stacks were in the range of $139/kW to $179/kW. The risk assessment identified a number of technical issues that would need to be considered during development. Phase II development work focused on development of planar solid oxide fuel cell elements, using a number of ceramic manufacturing methods, including tape casting, colloidal-spray deposition, screen printing, spin-coating, and sintering. Several processes were successfully established for fabrication of anode-supported, thin-film electrolyte cells, with performance levels at or near the state-of-the-art. The work in Phase III involved scale-up of cell manufacturing methods, development of non-destructive evaluation methods, and comprehensive electrical and electrochemical testing of solid oxide fuel cell materials and components.

  14. MultiLayer solid electrolyte for lithium thin film batteries

    Science.gov (United States)

    Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

    2015-07-28

    A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

  15. Jet Fuel Based High Pressure Solid Oxide Fuel Cell System

    Science.gov (United States)

    Gummalla, Mallika (Inventor); Yamanis, Jean (Inventor); Olsommer, Benoit (Inventor); Dardas, Zissis (Inventor); Bayt, Robert (Inventor); Srinivasan, Hari (Inventor); Dasgupta, Arindam (Inventor); Hardin, Larry (Inventor)

    2015-01-01

    A power system for an aircraft includes a solid oxide fuel cell system which generates electric power for the aircraft and an exhaust stream; and a heat exchanger for transferring heat from the exhaust stream of the solid oxide fuel cell to a heat requiring system or component of the aircraft. The heat can be transferred to fuel for the primary engine of the aircraft. Further, the same fuel can be used to power both the primary engine and the SOFC. A heat exchanger is positioned to cool reformate before feeding to the fuel cell. SOFC exhaust is treated and used as inerting gas. Finally, oxidant to the SOFC can be obtained from the aircraft cabin, or exterior, or both.

  16. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  17. Checkerboard deposition of lithium manganese oxide spinel (LiMn2O4) by RF magnetron sputtering on a stainless steel in all-solid-state thin film battery

    Science.gov (United States)

    Hsueh, T. H.; Yu, Y. Q.; Jan, D. J.; Su, C. H.; Chang, S. M.

    2018-03-01

    All-solid-state thin film lithium batteries (TFLBs) are the most competitive low-power sources to be applied in various kinds of micro-electro-mechanical systems and have been draw a lot of attention in academic research. In this paper, the checkerboard deposition of all-solid-state TFLB was composed of thin film lithium metal anode, lithium phosphorus oxynitride (LiPON) solid electrolyte, and checkerboard deposition of lithium manganese oxide spinel (LiMn2O4) cathode. The LiPON and LiMn2O4 were deposited by a radio frequency magnetron sputtering system, and the lithium metal was deposited by a thermal evaporation coater. The electrochemical characterization of this lithium battery showed the first discharge capacity of 107.8 μAh and the capacity retention was achieved 95.5% after 150 charge-discharge cycles between 4.3V and 3V at a current density of 11 μA/cm2 (0.5C). Obviously, the checkerboard of thin film increased the charge exchange rate; also this lithium battery exhibited high C-rate performance, with better capacity retention of 82% at 220 μA/cm2 (10C).

  18. Magnetron-sputtered La{sub 0.6}Sr{sub 0.4}Co{sub 0.2}Fe{sub 0.8}O{sub 3} nanocomposite interlayer for solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Solovyev, A. A., E-mail: andrewsol@mail.ru; Ionov, I. V.; Shipilova, A. V.; Kovalchuk, A. N.; Syrtanov, M. S. [Tomsk Polytechnic University (Russian Federation)

    2017-03-15

    A thin layer of a La{sub 0.6}Sr{sub 0.4}Co{sub 0.2}Fe{sub 0.8}O{sub 3} (LSCF) is deposited between the electrolyte and the La{sub 0.6}Sr{sub 0.4}Co{sub 0.2}Fe{sub 0.8}O{sub 3}/Ce{sub 0.9}Gd{sub 0.1}O{sub 2} (LSCF/CGO) cathode layer of a solid oxide fuel cell (SOFC) by pulsed magnetron sputtering using an oxide target of LSCF. The films were completely dense and well adherent to the substrate. The effects of annealing in temperature range from 200 to 1000 °C on the crystalline structure of the LSCF films have been studied. The films of nominal thickness, 250–500 nm, are crystalline when annealed at temperatures above 600 °C. The crystalline structure, surface topology, and morphology of the films were determined using X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM), respectively. To study the electrochemical characteristics of the deposited-film, solid oxide fuel cells using 325-nm LSCF films as interlayer between the electrolyte and the cathode have been fabricated. The LSCF interlayer improves the overall performance of the SOFC by increasing the interfacial area between the electrolyte and cathode. The electrolyte-supported cells with the interlayer have 30% greater, overall power output compared to that achieved with the cells without interlayer. The LSCF interlayer could also act as a transition layer that improves adhesion and relieves both thermal stress and lattice strain between the cathode and the electrolyte. Our results demonstrate that pulsed magnetron sputtering provides a low-temperature synthesis route for realizing ultrathin nanocrystalline LSCF film layers for intermediate- or low-temperature solid oxide fuel cells.

  19. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  20. Optical characterization of thin solid films

    CERN Document Server

    Ohlídal, Miloslav

    2018-01-01

    This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

  1. Properties of solid polymer electrolyte fluorocarbon film. [used in hydrogen/oxygen fuel cells

    Science.gov (United States)

    Alston, W. B.

    1973-01-01

    The ionic fluorocarbon film used as the solid polymer electrolyte in hydrogen/oxygen fuel cells was found to exhibit delamination failures. Polarized light microscopy of as-received film showed a lined region at the center of the film thickness. It is shown that these lines were not caused by incomplete saponification but probably resulted from the film extrusion process. The film lines could be removed by an annealing process. Chemical, physical, and tensile tests showed that annealing improved or sustained the water contents, spectral properties, thermo-oxidative stability, and tensile properties of the film. The resistivity of the film was significantly decreased by the annealing process.

  2. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

    Directory of Open Access Journals (Sweden)

    Robert J. Lovelett

    2016-04-01

    Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

  3. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    International Nuclear Information System (INIS)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

    2015-01-01

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  4. Advanced methods of solid oxide fuel cell modeling

    CERN Document Server

    Milewski, Jaroslaw; Santarelli, Massimo; Leone, Pierluigi

    2011-01-01

    Fuel cells are widely regarded as the future of the power and transportation industries. Intensive research in this area now requires new methods of fuel cell operation modeling and cell design. Typical mathematical models are based on the physical process description of fuel cells and require a detailed knowledge of the microscopic properties that govern both chemical and electrochemical reactions. ""Advanced Methods of Solid Oxide Fuel Cell Modeling"" proposes the alternative methodology of generalized artificial neural networks (ANN) solid oxide fuel cell (SOFC) modeling. ""Advanced Methods

  5. NiO-YSZ cermets supported low temperature solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xinge; Robertson, Mark; Deces-Petit, Cyrille; Xie, Yongsong; Hui, Rob; Yick, Sing; Styles, Edward; Roller, Justin; Kesler, Olivera; Maric, Radenka; Ghosh, Dave [Institute for Fuel Cell Innovation, National Research Council Canada, 3250 East Mall, Vancouver, BC (Canada V6T 1W5)

    2006-10-20

    Solid oxide fuel cells with thin electrolyte of two types, Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9} (SDC) (15{mu}m) single-layer and 8mol% Yttria stabilized zirconia (YSZ) (5{mu}m)+SDC (15{mu}m) bi-layer on NiO-YSZ cermet substrates were fabricated by screen printing and co-firing. A Sm{sub 0.5}Sr{sub 0.5}CoO{sub 3} cathode was printed, and in situ sintered during a cell performance test. The SDC single-layer electrolyte cell showed high electrochemical performance at low temperature, with a 1180mWcm{sup -2} peak power density at 650{sup o}C. The YSZ+SDC bi-layer electrolyte cell generated 340mWcm{sup -2} peak power density at 650{sup o}C, and showed good performance at 700-800{sup o}C, with an open circuit voltage close to theoretical value. Many high Zr-content micro-islands were found on the SDC electrolyte surface prior to the cathode preparation. The influence of co-firing temperature and thin film preparation methods on the Zr-islands' appearance was investigated. (author)

  6. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    Science.gov (United States)

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  7. Altering properties of cerium oxide thin films by Rh doping

    International Nuclear Information System (INIS)

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

    2015-01-01

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

  8. Pyroelectricity of silicon-doped hafnium oxide thin films

    Science.gov (United States)

    Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

    2018-04-01

    Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

  9. Electrical and stability performance of anode-supported solid oxide fuel cells with strontium- and magnesium-doped lanthanum gallate thin electrolyte

    International Nuclear Information System (INIS)

    Guo Weimin; Liu Jiang; Zhang Yaohui

    2008-01-01

    Anode-supported solid oxide fuel cells (SOFCs) comprising NiO-samarium-doped ceria (SDC) (Sm 0.2 Ce 0.8 O 1.9 ) composite anode, thin tri-layer electrolyte, and La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3 (LSCF)-La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 3-δ (LSGM) composite cathode were fabricated. The thin tri-layer consisting of an 11-μm thick LSGM electrolyte layer and a 12-μm thick La 0.4 Ce 0.6 O 1.8 (LDC) layer on each side of the LSGM was prepared by centrifugal casting and co-firing technique. The performance of the cells operated with humidified H 2 as fuel and ambient air as oxidant showed a maximum power density of 1.23 W cm -2 at 800 deg. C. A stability test of about 100 h was carried out and some deterioration of output power was observed, while the open circuit voltage (OCV) kept unchanged. Impedance measurements showed that both the electrolyte ohmic resistance and the electrode polarization increased with time and the latter dominated the degradation

  10. Solid Oxide Fuel Cell

    DEFF Research Database (Denmark)

    2010-01-01

    The solid oxide fuel cell comprising a metallic support material, an active anode layer consisting of a good hydrocarbon cracking catalyst, an electrolyte layer, an active cathode layer, and a transition layer consisting of preferably a mixture of LSM and a ferrite to the cathode current collector...

  11. Surface and sub-surface thermal oxidation of thin ruthenium films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kokke, S.; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low

  12. Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

    Science.gov (United States)

    Sarkar, Suman; Kundu, Sarathi

    2018-04-01

    Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

  13. Surface and sub-surface thermal oxidation of thin ruthenium films

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  14. Thin film ionic conductors based on cerium oxide

    International Nuclear Information System (INIS)

    Haridoss, P.; Hellstrom, E.; Garzon, F.H.; Brown, D.R.; Hawley, M.

    1994-01-01

    Fluorite and perovskite structure cerium oxide based ceramics are a class of materials that may exhibit good oxygen ion and/or protonic conductivity. The authors have successfully deposited thin films of these materials on a variety of substrates. Interesting orientation relationships were noticed between cerium oxide films and strontium titanate bi-crystal substrates. Near lattice site coincidence theory has been used to study these relationships

  15. Principles of electron backscattering by solids and thin films

    International Nuclear Information System (INIS)

    Niedrig, H.

    1977-01-01

    The parameters concerning the electron backscattering from thin films and solids (atomic scattering cross-section, atomic number, single/multiple scattering, film thickness of self-supporting films and of surface films on bulk substrates, scattering angular distribution, angle of incidence, diffraction effects) are described. Their influence on some important contrast mechanisms in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, orientation contrast) is discussed. The main backscattering electron detection systems are briefly described. (orig.) [de

  16. Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

    2014-04-01

    The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

  17. Enhanced stability of solid oxide fuel cells by employing a modified cathode-interlayer interface with a dense La0.6Sr0.4Co0.2Fe0.8O3-δ thin film

    Science.gov (United States)

    De Vero, Jeffrey C.; Develos-Bagarinao, Katherine; Kishimoto, Haruo; Ishiyama, Tomohiro; Yamaji, Katsuhiko; Horita, Teruhisa; Yokokawa, Harumi

    2018-02-01

    In La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode/Gd-doped ceria (GDC)/yttria-stabilized zirconia (YSZ)-electrolyte based solid oxide fuel cells (SOFCs), one of the key issues affecting performance and long-term stability is the apparent deactivation of LSCF cathode by the presence of secondary phases such as SrZrO3 at the interfaces. Herein, we report that by modifying the cathode-interlayer interface with a dense LSCF thin film, the severe cation interdiffusion is suppressed especially the fast gas or surface diffusion of Sr into adjacent GDC-interlayer/YSZ-electrolyte resulting in the significant reduction of SrZrO3 formation at the interfaces improving cell stability. In order to understand the present results, the interface chemistry is carefully considered and discussed. The results show that modification of cathode-interlayer interfaces is an important strategy for improving the lifetime of SOFCs.

  18. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  19. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... with pH values in the range from pH 2 to 11 have generally given etch rates below 0.04 Å h-l. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex situ...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

  20. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p......H values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex-situ annealing in O2...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...

  1. Solid phase crystallisation of HfO2 thin films

    International Nuclear Information System (INIS)

    Modreanu, M.; Sancho-Parramon, J.; O'Connell, D.; Justice, J.; Durand, O.; Servet, B.

    2005-01-01

    In this paper, we report on the solid phase crystallisation of carbon-free HfO 2 thin films deposited by plasma ion assisted deposition (PIAD). After deposition, the HfO 2 films were annealed in N 2 ambient for 3 h at 350, 550 and 750 deg. C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) were used for the physical characterisation of as-deposited and annealed HfO 2 . XRD has revealed that the as-deposited HfO 2 film is in an amorphous-like state with only traces of crystalline phase and that the annealed films are in a highly crystalline state. These results are in good agreement with the SE results showing an increase of refractive index by increasing the annealing temperature. XRR results show a significant density gradient over the as-deposited film thickness, which is characteristic of the PIAD method. The AFM measurements show that the HfO 2 layers have a smooth surface even after annealing at 750 deg. C. The present study demonstrates that the solid phase crystallisation of HfO 2 PIAD thin films starts at a temperature as low as 550 deg. C

  2. Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

    International Nuclear Information System (INIS)

    Stoldt, Conrad R; Bright, Victor M

    2006-01-01

    A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film. (topical review)

  3. Templated Solid-State Dewetting of Thin Silicon Films.

    Science.gov (United States)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Delobbe, Anne; Ronda, Antoine; Berbezier, Isabelle; Abbarchi, Marco

    2016-11-01

    Thin film dewetting can be efficiently exploited for the implementation of functionalized surfaces over very large scales. Although the formation of sub-micrometer sized crystals via solid-state dewetting represents a viable method for the fabrication of quantum dots and optical meta-surfaces, there are several limitations related to the intrinsic features of dewetting in a crystalline medium. Disordered spatial organization, size, and shape fluctuations are relevant issues not properly addressed so far. This study reports on the deterministic nucleation and precise positioning of Si- and SiGe-based nanocrystals by templated solid-state dewetting of thin silicon films. The dewetting dynamics is guided by pattern size and shape taking full control over number, size, shape, and relative position of the particles (islands dimensions and relative distances are in the hundreds nm range and fluctuate ≈11% for the volumes and ≈5% for the positioning). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Dense zig-zag microstructures in YSZ thin films by pulsed laser deposition

    Science.gov (United States)

    Stender, Dieter; Schäuble, Nina; Weidenkaff, Anke; Montagne, Alex; Ghisleni, Rudy; Michler, Johann; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

    2015-01-01

    The very brittle oxygen ion conductor yttria stabilized zirconia (YSZ) is a typical solid electrolyte for miniaturized thin film fuel cells. In order to decrease the fuel cell operating temperature, the thickness of yttria stabilized zirconia thin films is reduced. Often, these thin membranes suffer from mechanical failure and gas permeability. To improve these mechanical issues, a glancing angle deposition approach is used to grow yttria stabilized zirconia thin films with tilted columnar structures. Changes of the material flux direction during the deposition result in a dense, zigzag-like structure with columnar crystallites. This structure reduces the elastic modulus of these membranes as compared to columnar yttria stabilized zirconia thin films as monitored by nano-indentation which makes them more adaptable to applied stress.

  5. Dense zig-zag microstructures in YSZ thin films by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Dieter Stender

    2015-01-01

    Full Text Available The very brittle oxygen ion conductor yttria stabilized zirconia (YSZ is a typical solid electrolyte for miniaturized thin film fuel cells. In order to decrease the fuel cell operating temperature, the thickness of yttria stabilized zirconia thin films is reduced. Often, these thin membranes suffer from mechanical failure and gas permeability. To improve these mechanical issues, a glancing angle deposition approach is used to grow yttria stabilized zirconia thin films with tilted columnar structures. Changes of the material flux direction during the deposition result in a dense, zigzag-like structure with columnar crystallites. This structure reduces the elastic modulus of these membranes as compared to columnar yttria stabilized zirconia thin films as monitored by nano-indentation which makes them more adaptable to applied stress.

  6. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  7. Inhibitory Effect Evaluation of Glycerol-Iron Oxide Thin Films on Methicillin-Resistant Staphylococcus aureus

    Directory of Open Access Journals (Sweden)

    C. L. Popa

    2015-01-01

    Full Text Available The main purpose of this study was to evaluate the inhibitory effect of glycerol- iron oxide thin films on Methicillin-Resistant Staphylococcus aureus (MRSA. Our results suggest that glycerol-iron oxide thin films could be used in the future for various biomedical and pharmaceutical applications. The glycerol-iron oxide thin films have been deposited by spin coating method on a silicon (111 substrate. The structural properties have been studied by X-ray diffraction (XRD and scanning electron spectroscopy (SEM. The XRD investigations of the prepared thin films demonstrate that the crystal structure of glycerol-iron oxide nanoparticles was not changed after spin coating deposition. On the other hand, the SEM micrographs suggest that the size of the glycerol-iron oxide microspheres increased with the increase of glycerol exhibiting narrow size distributions. The qualitative depth profile of glycerol-iron oxide thin films was identified by glow discharge optical emission spectroscopy (GDOES. The GDOES spectra revealed the presence of the main elements: Fe, O, C, H, and Si. The antimicrobial activity of glycerol-iron oxide thin films was evaluated by measuring the zone of inhibition. After 18 hours of incubation at 37°C, the diameters of the zones of complete inhibition have been measured obtaining values around 25 mm.

  8. Thermoluminescent response of aluminium oxide thin films subject to gamma irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Arrieta, A.; Escobar A, L.; Camps, E.; Villagran, E.; Gonzalez, P.R

    2006-07-01

    The thermoluminescent (TL) properties of amorphous aluminium oxide thin films (thicknesses as low as 0.3 {mu}m) subjected to gamma (Co-60) irradiation are reported. Aluminium oxide thin films were prepared by laser ablation from an Al{sub 2}O{sub 3} target using a Nd: YAG laser with emission at the fundamental line. The films were exposed to gamma radiation (Co-60) in order to study their TL response. Thermoluminescence glow curves exhibited two peaks at 110 and 176 C. The high temperature peak shows good stability and 30% fading in the first 5 days after irradiation. A linear relationship between absorbed dose and the thermoluminescent response for doses span from 150 mGy to 100 Gy was observed. These results suggest that aluminium oxide thin films are suitable for detection and monitoring of gamma radiation. (Author)

  9. Picosecond laser registration of interference pattern by oxidation of thin Cr films

    Energy Technology Data Exchange (ETDEWEB)

    Veiko, Vadim; Yarchuk, Michail [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Zakoldaev, Roman, E-mail: zakoldaev@gmail.com [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Gedvilas, Mindaugas; Račiukaitis, Gediminas [Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300, Vilnius (Lithuania); Kuzivanov, Michail; Baranov, Alexander [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation)

    2017-05-15

    Highlights: • Periodical patterning of thin films was achieved by combining two technologies. • Selective chemical etching was combined with laser-induced oxidation. • Formation of the protective oxide layer prevented of chromium film from etching. • 1D binary grating with the chromium stripe width of 750 nm was fabricated. - Abstract: The laser oxidation of thin metallic films followed by its selective chemical etching is a promising method for the formation of binary metal structures on the glass substrates. It is important to confirm that even a single ultrashort laser pulse irradiation is able to create the protective oxide layer that makes possible to imprint the thermochemical image. Results of the thermo-chemical treatment of thin chromium films irradiated by picosecond laser pulse utilizing two and four beam interference combined with the chemical etching are presented. The spatial resolution of this method can be high enough due to thermo-chemical sharpening and can be close to the diffraction limit. Micro-Raman spectroscopy was applied for characterization of the chemical composition of the protective oxide layers formed under atmospheric conditions on the surface of thin chromium films.

  10. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    International Nuclear Information System (INIS)

    Predoi, D.; Ciobanu, C.S.; Radu, M.; Costache, M.; Dinischiotu, A.; Popescu, C.; Axente, E.; Mihailescu, I.N.; Gyorgy, E.

    2012-01-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: ► Hybrid, dextran-iron oxide nanoparticles and thin films. ► Laser immobilization. ► Biocompatibility of dextran-iron oxide nanoparticles.

  11. Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

    KAUST Repository

    la O', Gerardo Jose; Ahn, Sung-Jin; Crumlin, Ethan; Orikasa, Yuki; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

    2010-01-01

    Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

  12. Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

    KAUST Repository

    la O', Gerardo Jose

    2010-06-22

    Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

  13. Electrode Design for Low Temperature Direct-Hydrocarbon Solid Oxide Fuel Cells

    Science.gov (United States)

    Chen, Fanglin (Inventor); Zhao, Fei (Inventor); Liu, Qiang (Inventor)

    2015-01-01

    In certain embodiments of the present disclosure, a solid oxide fuel cell is described. The solid oxide fuel cell includes a hierarchically porous cathode support having an impregnated cobaltite cathode deposited thereon, an electrolyte, and an anode support. The anode support includes hydrocarbon oxidation catalyst deposited thereon, wherein the cathode support, electrolyte, and anode support are joined together and wherein the solid oxide fuel cell operates a temperature of 600.degree. C. or less.

  14. Electrode design for low temperature direct-hydrocarbon solid oxide fuel cells

    Science.gov (United States)

    Chen, Fanglin; Zhao, Fei; Liu, Qiang

    2015-10-06

    In certain embodiments of the present disclosure, a solid oxide fuel cell is described. The solid oxide fuel cell includes a hierarchically porous cathode support having an impregnated cobaltite cathode deposited thereon, an electrolyte, and an anode support. The anode support includes hydrocarbon oxidation catalyst deposited thereon, wherein the cathode support, electrolyte, and anode support are joined together and wherein the solid oxide fuel cell operates a temperature of 600.degree. C. or less.

  15. Nanoporous cerium oxide thin film for glucose biosensor.

    Science.gov (United States)

    Saha, Shibu; Arya, Sunil K; Singh, S P; Sreenivas, K; Malhotra, B D; Gupta, Vinay

    2009-03-15

    Nanoporous cerium oxide (CeO(2)) thin film deposited onto platinum (Pt) coated glass plate using pulsed laser deposition (PLD) has been utilized for immobilization of glucose oxidase (GOx). Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO(2) thin film. Response studies carried out using differential pulsed voltammetry (DPV) and optical measurements show that the GOx/CeO(2)/Pt bio-electrode shows linearity in the range of 25-300 mg/dl of glucose concentration. The low value of Michaelis-Menten constant (1.01 mM) indicates enhanced enzyme affinity of GOx to glucose. The observed results show promising application of the nanoporous CeO(2) thin film for glucose sensing application without any surface functionalization or mediator.

  16. Tungsten oxide (WO3) thin films for application in advanced energy systems

    International Nuclear Information System (INIS)

    Gullapalli, S. K.; Vemuri, R. S.; Manciu, F. S.; Enriquez, J. L.; Ramana, C. V.

    2010-01-01

    Inherent processes in coal gasification plants produce hazardous hydrogen sulfide (H 2 S), which must be continuously and efficiently detected and removed before the fuel is used for power generation. An attempt has been made in this work to fabricate tungsten oxide (WO 3 ) thin films by radio-frequency reactive magnetron-sputter deposition. The impetus being the use of WO 3 films for H 2 S sensors in coal gasification plants. The effect of growth temperature, which is varied in the range of 30-500 deg. C, on the growth and microstructure of WO 3 thin films is investigated. Characterizations made using scanning electron microscopy (SEM) and x-ray diffraction (XRD) indicate that the effect of temperature is significant on the microstructure of WO 3 films. XRD and SEM results indicate that the WO 3 films grown at room temperature are amorphous, whereas films grown at higher temperatures are nanocrystalline. The average grain-size increases with increasing temperature. WO 3 films exhibit smooth morphology at growth temperatures ≤300 deg. C while relatively rough at >300 deg. C. The analyses indicate that the nanocrystalline WO 3 films grown at 100-300 deg. C could be the potential candidates for H 2 S sensor development for application in coal gasification systems.

  17. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  18. Co-sputtered ZnO:Si thin films as transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

    2012-12-01

    Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

  19. Structural and electrical transport properties of La2Mo2O9 thin films prepared by pulsed laser deposition

    Science.gov (United States)

    Paul, T.; Ghosh, A.

    2017-04-01

    We have studied the structure and electrical properties of La2Mo2O9 thin films of different thicknesses prepared by the laser deposition technique at different substrate temperatures. The structural properties of the thin films have been investigated using XRD, XPS, AFM, TEM, SEM, and Raman spectroscopy. The electrical transport properties of the thin films have been investigated in wide temperature and frequency ranges. The cubic nature of the thin films has been confirmed from structural analysis. An enhancement of the oxygen ion conductivity of the films up to five orders of magnitude is obtained compared to that of the bulk La2Mo2O9, suggesting usefulness of the thin films as electrolytes in micro-solid oxide fuel cells. The enhanced dc ionic conductivity of the thin films has been interpreted using the rule of the mixture model, while a power law model has been used to investigate the frequency and temperature dependences of the conductivity. The analysis of the results predicts the three-dimensional oxygen ion conduction in the thin films.

  20. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Predoi, D.; Ciobanu, C.S. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Radu, M.; Costache, M.; Dinischiotu, A. [Molecular Biology Center, University of Bucharest, 91-95 Splaiul Independentei, 76201, Bucharest 5 (Romania); Popescu, C.; Axente, E.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Gyorgy, E., E-mail: egyorgy@cin2.es [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Consejo Superior de Investigaciones Cientificas, Centre d' Investigacions en Nanociencia i Nanotecnologia (CSIC-CIN2), Campus UAB, 08193 Bellaterra (Spain)

    2012-02-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: Black-Right-Pointing-Pointer Hybrid, dextran-iron oxide nanoparticles and thin films. Black-Right-Pointing-Pointer Laser immobilization. Black-Right-Pointing-Pointer Biocompatibility of dextran-iron oxide nanoparticles.

  1. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    Directory of Open Access Journals (Sweden)

    Farzana Aktar Chowdhury

    2015-10-01

    Full Text Available This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP adorned graphene oxide (GO nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW−1. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  2. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Farzana Aktar [Experimental Physics Division, Atomic Energy Centre, 4, Kazi Nazrul Islam Avenue, Dhaka-1000 (Bangladesh); Hossain, Mohammad Abul [Department of Chemistry, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Uchida, Koji; Tamura, Takahiro; Sugawa, Kosuke; Mochida, Tomoaki; Otsuki, Joe [College of Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Mohiuddin, Tariq [Department of Physics, College of Science, Sultan Qaboos University, Muscat (Oman); Boby, Monny Akter [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Alam, Mohammad Sahabul, E-mail: msalam@ksu.edu.sa [Department of Physics, Faculty of Science, University of Dhaka, Dhaka-1000 (Bangladesh); Department of Chemical Engineering, College of Engineering & King Abdullah Institute for Nanotechnology, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2015-10-15

    This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP) adorned graphene oxide (GO) nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR) radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW{sup −1}. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  3. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  4. Development of solid oxide fuel cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Dae Kab; Kim, Sun Jae; Jung, Choong Hwan; Kim, Kyung Hoh; Park, Ji Yun; Oh, Suk Jin [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1995-01-01

    Solid Oxide Fuel Cell (SOFC) technologies that use zirconium oxide as the electrolyte material were studied in this present report. SOFC exhibits a very high power generation efficiency of over 50 %, and does not discharge pollution materials such as dusts, sulfur dioxide, and nitrogen oxide. Zirconia, Ni/YSZ (yttria stabilized zirconia), and La-Sr-Mn-Oxide materials were developed for the electrolyte material, for the anode, and for the cathode, respectively. After making thin zirconia plate using tape casting process, anode and cathode powders were screen printed on the zirconia plate for fabricating unit cells. A test system composed of a vertical tube furnace, digital multimeter, DC current supplier, and measuring circuit was constructed for testing the unit cell performance. This system was controlled by a home-made computer program. Founded on this unit cell technology and system, a multi-stack SOFC system was studied. This system was composed of 10 unit cells each of them had an electrode area of 40 x 40 mm. Based on this system design, large and thin zirconia plates of 70 x 70 mm in area was fabricated for the electrolyte. Different from in the unit cell system, interconnectors are needed in the multi-stack system for connecting unit cells electrically. For this interconnectors, Inconel 750 alloy was selected, sliced into wafers, machined, surface finished, and then Pt-plated. 55 figs, 8 tabs, 51 refs. (Author).

  5. Development of solid oxide fuel cell technology

    International Nuclear Information System (INIS)

    Kang, Dae Kab; Kim, Sun Jae; Jung, Choong Hwan; Kim, Kyung Hoh; Park, Ji Yun; Oh, Suk Jin

    1995-01-01

    Solid Oxide Fuel Cell (SOFC) technologies that use zirconium oxide as the electrolyte material were studied in this present report. SOFC exhibits a very high power generation efficiency of over 50 %, and does not discharge pollution materials such as dusts, sulfur dioxide, and nitrogen oxide. Zirconia, Ni/YSZ (yttria stabilized zirconia), and La-Sr-Mn-Oxide materials were developed for the electrolyte material, for the anode, and for the cathode, respectively. After making thin zirconia plate using tape casting process, anode and cathode powders were screen printed on the zirconia plate for fabricating unit cells. A test system composed of a vertical tube furnace, digital multimeter, DC current supplier, and measuring circuit was constructed for testing the unit cell performance. This system was controlled by a home-made computer program. Founded on this unit cell technology and system, a multi-stack SOFC system was studied. This system was composed of 10 unit cells each of them had an electrode area of 40 x 40 mm. Based on this system design, large and thin zirconia plates of 70 x 70 mm in area was fabricated for the electrolyte. Different from in the unit cell system, interconnectors are needed in the multi-stack system for connecting unit cells electrically. For this interconnectors, Inconel 750 alloy was selected, sliced into wafers, machined, surface finished, and then Pt-plated. 55 figs, 8 tabs, 51 refs. (Author)

  6. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  7. Electrical and stability performance of anode-supported solid oxide fuel cells with strontium- and magnesium-doped lanthanum gallate thin electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Guo Weimin [College of Chemistry, South China University of Technology, Guangzhou 510640, Guangdong (China); Liu Jiang [College of Chemistry, South China University of Technology, Guangzhou 510640, Guangdong (China)], E-mail: jiangliu@scut.edu.cn; Zhang Yaohui [College of Chemistry, South China University of Technology, Guangzhou 510640, Guangdong (China)

    2008-05-20

    Anode-supported solid oxide fuel cells (SOFCs) comprising NiO-samarium-doped ceria (SDC) (Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9}) composite anode, thin tri-layer electrolyte, and La{sub 0.6}Sr{sub 0.4}Co{sub 0.8}Fe{sub 0.2}O{sub 3} (LSCF)-La{sub 0.9}Sr{sub 0.1}Ga{sub 0.8}Mg{sub 0.2}O{sub 3-{delta}} (LSGM) composite cathode were fabricated. The thin tri-layer consisting of an 11-{mu}m thick LSGM electrolyte layer and a 12-{mu}m thick La{sub 0.4}Ce{sub 0.6}O{sub 1.8} (LDC) layer on each side of the LSGM was prepared by centrifugal casting and co-firing technique. The performance of the cells operated with humidified H{sub 2} as fuel and ambient air as oxidant showed a maximum power density of 1.23 W cm{sup -2} at 800 deg. C. A stability test of about 100 h was carried out and some deterioration of output power was observed, while the open circuit voltage (OCV) kept unchanged. Impedance measurements showed that both the electrolyte ohmic resistance and the electrode polarization increased with time and the latter dominated the degradation.

  8. Strain-induced phenomenon in complex oxide thin films

    Science.gov (United States)

    Haislmaier, Ryan

    Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

  9. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    International Nuclear Information System (INIS)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

    2014-01-01

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  10. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

    2014-11-15

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  11. Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

    Science.gov (United States)

    Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-07-01

    In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

  12. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  13. Plasma Deposited Thin Iron Oxide Films as Electrocatalyst for Oxygen Reduction Reaction in Proton Exchange Membrane Fuel Cells

    Directory of Open Access Journals (Sweden)

    Lukasz JOZWIAK

    2017-02-01

    Full Text Available The possibility of using plasma deposited thin films of iron oxides as electrocatalyst for oxygen reduction reaction (ORR in proton exchange membrane fuel cells (PEMFC was examined. Results of energy-dispersive X-ray spectroscopy (EDX and X-ray photoelectron spectroscopy (XPS analysis indicated that the plasma deposit consisted mainly of FeOX structures with the X parameter close to 1.5. For as deposited material iron atoms are almost exclusively in the Fe3+ oxidation state without annealing in oxygen containing atmosphere. However, the annealing procedure can be used to remove the remains of carbon deposit from surface. The single cell test (SCT was performed to determine the suitability of the produced material for ORR. Preliminary results showed that power density of 0.23 mW/cm2 could be reached in the tested cell.DOI: http://dx.doi.org/10.5755/j01.ms.23.1.14406

  14. Morphology selection for cupric oxide thin films by electrodeposition.

    Science.gov (United States)

    Dhanasekaran, V; Mahalingam, T; Chandramohan, R

    2011-10-01

    Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

  15. The origin of local strain in highly epitaxial oxide thin films.

    Science.gov (United States)

    Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

    2013-10-31

    The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

  16. As-Deposited (La1-xSrx)(Ga1-y-zMgyCoz)O3-(x+y+z)/2 Crystallized Thin Films Prepared by Pulsed Laser Deposition for Application to Solid Oxide Fuel Cell Electrolyte

    Science.gov (United States)

    Mitsugi, Fumiaki; Kanazawa, Seiji; Ohkubo, Toshikazu; Nomoto, Yukiharu; Ishihara, Tatsumi; Takita, Yusaku

    2004-01-01

    Doped lanthanum gallate (La1-xSrx)(Ga1-y-zMgyCoz)O3-(x+y+z)/2 (LSGMCO) perovskite oxide films were deposited on a quartz glass, LaAlO3 single-crystal substrate and porous anode electrode of a solid oxide fuel cell (SOFC) by pulsed laser deposition. It was necessary to increase the substrate temperature up to 800°C for a crystallization of the LSGMCO films. The film deposited on the LaAlO3 single-crystal substrate grew along the c-axis. The as-deposited LSGMCO thick film fabricated on the porous substrate at 800°C and at an oxygen pressure of 20Pa was formed from polycrystal columns and showed a high conductivity of 0.7S/cm at a measurement temperature of 800°C. The activation energies were 0.72 eV at 600-800°C and 1.05 eV at 400-600°C.

  17. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  18. Optimisation of chemical solution deposition of indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sunde, Tor Olav Løveng; Einarsrud, Mari-Ann; Grande, Tor, E-mail: grande@ntnu.no

    2014-12-31

    An environmentally friendly aqueous sol–gel process has been optimised to deposit indium tin oxide (ITO) thin films, aiming to improve the film properties and reduce the deposition costs. It was demonstrated how parameters such as cation concentration and viscosity could be applied to modify the physical properties of the sol and thereby reduce the need for multiple coatings to yield films with sufficient conductivity. The conductivity of the thin films was enhanced by adjusting the heat treatment temperature and atmosphere. Both increasing the heat treatment temperature of the films from 530 to 800 °C and annealing in reducing atmosphere significantly improved the electrical conductivity, and conductivities close to the state of the art sputtered ITO films were obtained. A pronounced decreased conductivity was observed after exposing the thin films to air and the thermal reduction and ageing of the film was studied by in situ conductivity measurements. - Highlights: • Spin coating of indium tin oxide using an aqueous solution was optimised. • The conductivity was enhanced by thermal annealing in reducing atmosphere. • The conductivity of is comparable to the conductivity of sputtered films. • A relaxation process in the reduced thin film was observed after exposure in air.

  19. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  20. SOLID STATE ENERGY CONVERSION ALLIANCE (SECA) SOLID OXIDE FUEL CELL PROGRAM

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Minh; Jim Powers

    2003-10-01

    This report summarizes the work performed for April 2003--September 2003 reporting period under Cooperative Agreement DE-FC26-01NT41245 for the U.S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Solid State Energy Conversion Alliance (SECA) Solid oxide Fuel Cell Program''. During this reporting period, the conceptual system design activity was completed. The system design, including strategies for startup, normal operation and shutdown, was defined. Sealant and stack materials for the solid oxide fuel cell (SOFC) stack were identified which are capable of meeting the thermal cycling and degradation requirements. A cell module was tested which achieved a stable performance of 0.238 W/cm{sup 2} at 95% fuel utilization. The external fuel processor design was completed and fabrication begun. Several other advances were made on various aspects of the SOFC system, which are detailed in this report.

  1. Physical properties investigation of reduced graphene oxide thin films prepared by material inkjet printing

    Czech Academy of Sciences Publication Activity Database

    Schmiedová, V.; Pospíšil, J.; Kovalenko, A.; Ashcheulov, Petr; Fekete, Ladislav; Cubon, T.; Kotrusz, P.; Zmeškal, O.; Weiter, M.

    2017-01-01

    Roč. 2017, Aug (2017), s. 1-8, č. článku 3501903. ISSN 1687-4110 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088; GA ČR(CZ) GA15-05095S Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132; GA MŠk(CZ) LO1211 Institutional support: RVO:68378271 Keywords : graphene oxide * thin film * transparent electrode * inkjet printing Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.871, year: 2016

  2. Development of wear resistant zirconium oxide thin films on stainless steel substrates

    International Nuclear Information System (INIS)

    Then, I.K.; Mujahid, M.; Zhang, B.

    2005-01-01

    The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 μm in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

  3. Development of wear resistant zirconium oxide thin films on stainless steel substrates

    Energy Technology Data Exchange (ETDEWEB)

    Then, I.K.; Mujahid, M. [School of Materials Engineering, Nanyang Technological Univ. (Singapore); Zhang, B. [Dou Yee Technologies Pte Ltd, Bedok Industrial Park C (Singapore)

    2005-07-01

    The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 {mu}m in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

  4. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  5. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

  6. Effective improvement of interface modified strontium titanate based solid oxide fuel cell anodes by infiltration with nano-sized palladium and gadolinium-doped cerium oxide

    DEFF Research Database (Denmark)

    Abdul Jabbar, Mohammed Hussain; Høgh, Jens Valdemar Thorvald; Zhang, Wei

    2013-01-01

    The development of low temperature solid oxide fuel cell (SOFC) anodes by infiltration of Pd/Gd-doped cerium oxide (CGO) electrocatalysts in Nb-doped SrTiO3 (STN) backbones has been investigated. Modification of the electrode/electrolyte interface by thin layer of spin-coated CGO (400-500 nm) con...

  7. In situ X-ray studies of film cathodes for solid oxide fuel cells

    International Nuclear Information System (INIS)

    Fuoss, Paul; Chang, Kee-Chul; You, Hoydoo

    2013-01-01

    Highlights: •Synchrotron X-rays are used to study in operando the structural and chemical changes of LSM and LSCF film cathodes during half-cell operations. •A-site and B-site cations actively segregate or desegregate on the changes of temperature, pO 2 , and electrochemical potential. •Chemical lattice expansions show that oxygen-cathode interface is the primary source of rate-limiting processes. •The surface and subsurface of the LSM and LSCF films have different oxidation-states due to vacancy concentration changes. •Liquid-phase infiltration and coarsening processes of cathode materials into porous YSZ electrolyte backbone were monitored by USAXS. -- Abstract: Synchrotron-based X-ray techniques have been used to study in situ the structural and chemical changes of film cathodes during half-cell operations. The X-ray techniques used include X-ray reflectivity (XR), total-reflection X-ray fluorescence (TXRF), high-resolution diffraction (HRD), ultra-small angle X-ray scattering (USAXS). The epitaxial thin film model cathodes for XR, TXRF, and HRD measurements are made by pulse laser deposition and porous film cathodes for USAX measurements are made by screen printing technique. The experimental results reviewed here include A-site and B-site segregations, lattice expansion, oxidation-state changes during cell operations and liquid-phase infiltration and coarsening of cathode to electrolyte backbone

  8. The TMI regenerable solid oxide fuel cell

    Science.gov (United States)

    Cable, Thomas L.

    1995-04-01

    Energy storage and production in space requires rugged, reliable hardware which minimizes weight, volume, and maintenance while maximizing power output and usable energy storage. These systems generally consist of photovoltaic solar arrays which operate during sunlight cycles to provide system power and regenerate fuel (hydrogen) via water electrolysis; during dark cycles, hydrogen is converted by the fuel cell into system. The currently preferred configuration uses two separate systems (fuel cell and electrolyzer) in conjunction with photovoltaic cells. Fuel cell/electrolyzer system simplicity, reliability, and power-to-weight and power-to-volume ratios could be greatly improved if both power production (fuel cell) and power storage (electrolysis) functions can be integrated into a single unit. The Technology Management, Inc. (TMI), solid oxide fuel cell-based system offers the opportunity to both integrate fuel cell and electrolyzer functions into one unit and potentially simplify system requirements. Based an the TMI solid oxide fuel cell (SOPC) technology, the TMI integrated fuel cell/electrolyzer utilizes innovative gas storage and operational concepts and operates like a rechargeable 'hydrogen-oxygen battery'. Preliminary research has been completed on improved H2/H2O electrode (SOFC anode/electrolyzer cathode) materials for solid oxide, regenerative fuel cells. Improved H2/H2O electrode materials showed improved cell performance in both fuel cell and electrolysis modes in reversible cell tests. ln reversible fuel cell/electrolyzer mode, regenerative fuel cell efficiencies (ratio of power out (fuel cell mode) to power in (electrolyzer model)) improved from 50 percent (using conventional electrode materials) to over 80 percent. The new materials will allow the TMI SOFC system to operate as both the electrolyzer and fuel cell in a single unit. Preliminary system designs have also been developed which indicate the technical feasibility of using the TMI SOFC

  9. Ellipsometric investigations of pyrolytically deposited thin indium oxide films

    International Nuclear Information System (INIS)

    Winkler, U.

    1980-01-01

    Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

  10. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  11. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  12. Influence of Ti Content on the Partial Oxidation of TixFeCoNi Thin Films in Vacuum Annealing

    Directory of Open Access Journals (Sweden)

    Ya-Chu Yang

    2017-09-01

    Full Text Available This study investigated the effects of Ti content and vacuum annealing on the microstructure evolution of TixFeCoNi (x = 0, 0.5, and 1 thin films and the underlying mechanisms. The as-deposited thin film transformed from an FCC (face center cubic structure at x = 0 into an amorphous structure at x = 1, which can be explained by determining topological instability and a hard ball model. After annealing was performed at 1000 °C for 30 min, the films presented a layered structure comprising metal solid solutions and oxygen-deficient oxides, which can be major attributed to oxygen traces in the vacuum furnace. Different Ti contents provided various phase separation and layered structures. The underlying mechanism is mainly related to the competition among possible oxides in terms of free energy production at 1000 °C.

  13. Indium Tin Oxide thin film gas sensors for detection of ethanol vapours

    International Nuclear Information System (INIS)

    Vaishnav, V.S.; Patel, P.D.; Patel, N.G.

    2005-01-01

    Indium Tin Oxide (ITO: In 2 O 3 + 17% SnO 2 ) thin films grown on alumina substrate at 648 K temperatures using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-2500 ppm). The operating temperature of the sensor was optimized. The sensitivity variation of films having different thickness was studied. The sensitivity of the films deposited on Si substrates was studied. The response of the film with MgO catalytic layer on sensitivity and selectivity was observed. A novel approach of depositing thin stimulating layer of various metals/oxides below the ITO film was tried and tested

  14. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  15. Raman and XPS characterization of vanadium oxide thin films with temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ureña-Begara, Ferran, E-mail: ferran.urena@uclouvain.be [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium); Crunteanu, Aurelian [XLIM Research Institute, UMR 7252, CNRS/Université de Limoges, Limoges (France); Raskin, Jean-Pierre [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium)

    2017-05-01

    Highlights: • Comprehensive study of the oxidation of VO{sub 2} thin films from R.T. up to 550 °C. • Phase changes and mixed-valence vanadium oxides formed during the oxidation process. • Reported Raman and XPS signatures for each vanadium oxide. • Monitoring of the current and resistance evolution at the surface of the films. • Oxidation model describing the evolution of the vanadium oxides and phase changes. - Abstract: The oxidation mechanisms and the numerous phase transitions undergone by VO{sub 2} thin films deposited on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO{sub 2} monoclinic phase at R.T. and the final V{sub 2}O{sub 5} phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO{sub 2} films prepared on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates.

  16. Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yan [Key Laboratory of New Fiber Materials and Modern Textile, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Yu, Jianqiang, E-mail: jianqyu@qdu.edu.cn [Key Laboratory of New Fiber Materials and Modern Textile, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Sun, Kai; Zhu, Yukun [Key Laboratory of New Fiber Materials and Modern Textile, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Bu, Yuyu; Chen, Zhuoyuan [National Engineering Center of Marine Corrosion Protection, Institute of Oceanology, Chinese Academy of Sciences, 7 Nanhai Road, Qingdao 266071 (China)

    2014-05-01

    Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

  17. Solid Oxide Fuel Cells Operating on Alternative and Renewable Fuels

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaoxing; Quan, Wenying; Xiao, Jing; Peduzzi, Emanuela; Fujii, Mamoru; Sun, Funxia; Shalaby, Cigdem; Li, Yan; Xie, Chao; Ma, Xiaoliang; Johnson, David; Lee, Jeong; Fedkin, Mark; LaBarbera, Mark; Das, Debanjan; Thompson, David; Lvov, Serguei; Song, Chunshan

    2014-09-30

    This DOE project at the Pennsylvania State University (Penn State) initially involved Siemens Energy, Inc. to (1) develop new fuel processing approaches for using selected alternative and renewable fuels – anaerobic digester gas (ADG) and commercial diesel fuel (with 15 ppm sulfur) – in solid oxide fuel cell (SOFC) power generation systems; and (2) conduct integrated fuel processor – SOFC system tests to evaluate the performance of the fuel processors and overall systems. Siemens Energy Inc. was to provide SOFC system to Penn State for testing. The Siemens work was carried out at Siemens Energy Inc. in Pittsburgh, PA. The unexpected restructuring in Siemens organization, however, led to the elimination of the Siemens Stationary Fuel Cell Division within the company. Unfortunately, this led to the Siemens subcontract with Penn State ending on September 23rd, 2010. SOFC system was never delivered to Penn State. With the assistance of NETL project manager, the Penn State team has since developed a collaborative research with Delphi as the new subcontractor and this work involved the testing of a stack of planar solid oxide fuel cells from Delphi.

  18. Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

    NARCIS (Netherlands)

    Coloma Ribera, R.

    2017-01-01

    This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

  19. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramana, C.V. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)]. E-mail: ramanacv@umich.edu; Atuchin, V.V. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kochubey, V.A. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Pokrovsky, L.D. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Shutthanandan, V. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Becker, U. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Ewing, R.C. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T {sub s}) and oxygen partial pressure (pO{sub 2}). The effect of T {sub s} and pO{sub 2} on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T {sub s} and pO{sub 2} on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 deg. C under 62.3% O{sub 2} pressure were stoichiometric and polycrystalline MoO{sub 3}. Films grown at lower pO{sub 2} were non-stoichiometric MoO {sub x} films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO{sub 3} films.

  20. Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

    International Nuclear Information System (INIS)

    Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

    2006-01-01

    Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

  1. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  2. Thermoluminescent characterization of thin films of aluminium oxide submitted to beta and gamma radiation

    International Nuclear Information System (INIS)

    Villagran, E.; Escobar A, L.; Camps, E.; Gonzalez, P.R.; Martinez A, L.

    2002-01-01

    By mean of the laser ablation technique, thin films of aluminium oxide have been deposited on kapton substrates. These films present thermoluminescent response (Tl) when they are exposed to beta and gamma radiation. The brilliance curves show two peaks between 112 C and 180 C. A dose-response relationship study was realized and the Tl kinetic parameters were determined using the computerized deconvolution of the brilliance curve (CGCD). The thin films of aluminium oxide have potential applications as ultra.thin radiation dosemeters. (Author)

  3. Synthesis and characterization of cobaltite nanotubes for solid-oxide fuel cell cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Napolitano, F; Baque, L; Troiani, H; Granada, M; Serquis, A, E-mail: aserquis@cab.cnea.gov.a [Instituto Balseiro-Centro Atomico Bariloche and CONICET, San Carlos de Bariloche (Argentina)

    2009-05-01

    La{sub 1-x}Sr{sub x}Co{sub 1-y}FeyO{sub 3-d}elta oxides are good candidates for solid oxide fuel cell (SOFC) cathodes because these materials present high ionic and electronic conductivity, and compatibility with Cerium Gadolinium Oxide (CGO) electrolytes allowing a lower operation temperature. In this work, we report the synthesis of La{sub 0.4}Sr{sub 0.6}Co{sub 0.8}Fe{sub 0.2}O{sub 3-d}elta (LSCF) nanotubes prepared by a porous polycarbonate membrane approach, obtaining different microstructures depending on sintering conditions. The structure and morphology of the nanotubes and deposited films were characterized by X-ray diffraction, transmission and scanning microscopy. Finally, we obtained nanostructured films of vertically aligned LSCF tubes deposited over the whole surface of CGO pellets with diameter up to 2.5cm in a direct and single step process.

  4. Ion induced spinodal dewetting of thin solid films

    Energy Technology Data Exchange (ETDEWEB)

    Repetto, Luca; Setina Batic, Barbara; Firpo, Giuseppe; Piano, Emanuele; Valbusa, Ugo [Dipartimento di Fisica, Universita di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2012-05-28

    We present experimental data and numerical simulations in order to show that the mechanism of spinodal dewetting is active during ion beam irradiation of thin solid films. The expected scaling law for the characteristic wavelengths versus the initial film thickness is modified by the presence of sputtering. The conclusion is fully supported by model simulation which shows a square law dependence for null sputtering yield and a bimodal trend when sputtering is included. This result is in contrast to earlier studies and opens the possibility to control and use ion induced dewetting for the fabrication of functional nanostructures.

  5. Validating the technological feasibility of yttria-stabilized zirconia-based semiconducting-ionic composite in intermediate-temperature solid oxide fuel cells

    Science.gov (United States)

    Cai, Yixiao; Wang, Baoyuan; Wang, Yi; Xia, Chen; Qiao, Jinli; van Aken, Peter A.; Zhu, Bin; Lund, Peter

    2018-04-01

    YSZ as the electrolyte of choice has dominated the progressive development of solid oxide fuel cell (SOFC) technologies for many years. To enable SOFCs operating at intermediate temperatures of 600 °C or below, major technical advances were built on a foundation of a thin-film YSZ electrolyte, NiO anode, and perovskite cathode, e.g. La0.6Sr0.4Co0.8Fe0.2O3-δ (LSCF). Inspired by functionalities in engineered heterostructure interfaces, the present work uses the components from state-of-the-art SOFCs, i.e, the anode NiO-YSZ and the cathode LSCF-YSZ, or the convergence of all three components, i.e., NiO-YSZ-LSCF, to fabricate semiconductor-ionic membranes (SIMs) and devices. A series of proof-of-concept fuel cell devices are designed by using each of the above SIMs sandwiched between two semiconducting Ni0.8Co0.15Al0.05LiO2-δ (NCAL) layers. We systematically compare these novel designs at 600 °C with two reference fuel cells: a commercial product of anode-supported YSZ electrolyte thin-film cell, and a lab-assembled fuel cell with a conventional configuration of NiO-YSZ (anode)/YSZ (electrolyte)/LSCF-YSZ (cathode). In comparison to the reference cells, the SIM device in a configuration of NCAL/NiO-YSZ-LSCF/NCAL reaches more than 3-fold enhancement of the maximum power output. By using spherical aberration-corrected transmission electron microscopy and spectroscopy approaches, this work offers insight into the mechanisms underlying SIM-associated SOFC performance enhancement.

  6. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  7. Structure and Sensor Properties of Thin Ordered Solid Films

    Directory of Open Access Journals (Sweden)

    Jadwiga Sołoducho

    2009-09-01

    Full Text Available Miniaturized gas sensors and biosensors based on nanostructured sensing elements have attracted considerable interest because these nanostructured materials can be used to significantly improve sensor sensitivity and the response time. We report here on a generic, reversible sensing platform based on hybrid nanofilms. Thin ordered Langmuir-Blodgett (LB films built of fluorene derivatives were used as effective gas sensors for both oxidative and reductive analytes. A novel immobilization method based on thin LB films as a matrix has been developed for construction of sensing protein layers. Biomolecules can often be incorporated into and immobilized on Langmuir-Blodgett films using adsorption methods or by covalent immobilization of proteins. The sensor sensitisation was achieved by an amphiphilic N-alkyl-bis(thiophenearylenes admixed into the film. The interlaced derivative was expected to facilitate the electron transfer, thereby enhancing the sensor sensitivity. The results suggest that this may be very promising approach for exploring the interactions between proteins and high throughput detection of phenol derivatives in wastewater.

  8. Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

    Science.gov (United States)

    Sathisha, D.; Naik, K. Gopalakrishna

    2018-05-01

    Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

  9. Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

    Energy Technology Data Exchange (ETDEWEB)

    Shvets, Petr, E-mail: pshvets@innopark.kantiana.ru; Maksimova, Ksenia; Demin, Maxim; Dikaya, Olga; Goikhman, Alexander

    2017-05-15

    The formation of thin films of the different stable and metastable titanium oxide phases is demonstrated by cathode arc sputtering of a titanium target in an oxygen atmosphere. We also show that sputtering of titanium in vacuum yields the formation of titanium silicides on the silicon substrate. The crystal structure of the produced samples was investigated using Raman spectroscopy and X-ray diffraction. We conclude that cathode arc sputtering is a flexible method suitable for producing the functional films for electronic applications. The functionality is verified by the memory effect demonstration, based on the resistive switching in the titanium oxide thin film structure.

  10. Fabricating Pinhole-Free YSZ Sub-Microthin Films by Magnetron Sputtering for Micro-SOFCs

    Directory of Open Access Journals (Sweden)

    T. Hill

    2011-01-01

    Full Text Available Submicron thin yttria stabilized zirconia (YSZ films were prepared on a variety of substrates with different surface morphologies by magnetron sputtering followed by thermal oxidation. Pinholes were observed in the films deposited on nanoporous alumina substrates. Initial dense Y/Zr films developed nanocracks after thermal oxidation on smooth Si wafer substrates. At optimal sputtering and oxidation conditions, smooth and crack/pore-free films were achieved on Si wafer substrates. The thin YSZ films exhibited fully ionic conduction with ionic conductivities, and activation energy corroborated well with the values from commercial YSZ plates. The thin YSZ films can be utilized in Solid Oxide Fuel Cells (SOFCs for intermediate temperature operations.

  11. SOLID STATE ENERGY CONVERSION ALLIANCE (SECA) SOLID OXIDE FUEL CELL PROGRAM

    Energy Technology Data Exchange (ETDEWEB)

    Unknown

    2003-06-01

    This report summarizes the progress made during the September 2001-March 2002 reporting period under Cooperative Agreement DE-FC26-01NT41245 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Solid State Energy Conversion Alliance (SECA) Solid Oxide Fuel Cell Program''. The program focuses on the development of a low-cost, high-performance 3-to-10-kW solid oxide fuel cell (SOFC) system suitable for a broad spectrum of power-generation applications. The overall objective of the program is to demonstrate a modular SOFC system that can be configured to create highly efficient, cost-competitive, and environmentally benign power plants tailored to specific markets. When fully developed, the system will meet the efficiency, performance, life, and cost goals for future commercial power plants.

  12. Degradation of zinc oxide thin films in aqueous environment. Pt. II. Coated films

    Energy Technology Data Exchange (ETDEWEB)

    Rosa, L. de; Mitton, D.B.; Monetta, T.; Bellucci, F. [Naples Univ. (Italy). Dept. of Materials and Production Engineering; Springer, J. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

    2001-12-01

    cn Part I of this research, the degradation mechanism of two different bare ZnO thin films was assessed. Degradation of the electrical properties of ZnO as well as changes in morphology were observed for both films. In the current paper, the degradation of zinc oxide thin films coated with protective acrylic paint is addressed during exposure to (i) an aqueous 3.5% NaCl solution at 85 C and (ii) a standard damp heat test at 85% R.H. and 85 C. Electrical and electrochemical techniques were employed to monitor zinc oxide degradation during exposure to the test environments. Electrochemical Impedance Spectroscopy was employed to investigate the delamination phenomena at the ZnO/coating interface and a simple equivalent circuit was developed to quantitatively measure the delamination ratio. The effect of different silane based adhesion promoters (glycidil-oxypropyl-trimethoxy-silane and aminopropyl-trimethoxy-silane) was also investigated. (orig.)

  13. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  14. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  15. Study of thin metal films and oxide materials for nanoelectronics applications

    OpenAIRE

    De Los Santos Valladares, Luis

    2012-01-01

    Appendix A Pages 132-134 have been removed from this online version of the thesis for publisher copyright reasons. These had contained page images from the cover of Nanotechnology, Vol. 21, Nov 2010 and its corresponding web alert Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide...

  16. Surface and sub-surface thermal oxidation of ruthenium thin films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    For next generation Extreme UV photolithography, multilayer coatings may require protective capping layers against surface contamination. Ruthenium, as a low-oxidation metal, is often used as a reference material. The oxidation behaviour of Ru thin films has been studied using X-ray reflectometry

  17. Realisation and study of poly-phthalocyanine thin films grafted on solid substrate

    International Nuclear Information System (INIS)

    Huc, Vincent

    1999-01-01

    The aim of this work is to develop thin films of phthalocyanines covalently grafted to solid substrates. These thin films are formed of successive monomolecular layers of macrocycles, deposited on the substrate by a 'Merrifield' sequential method. These phthalocyanines have in their centre a metallic ion (such as ruthenium) which ensures the bonding of phthalocyanines on the substrate and the assembling of monolayers consecutive together. The deposition of these monolayers is provided by a succession of two spontaneous exchange ligands reactions between the labile groups L initially bound to ruthenium and to those present on the substrate (preliminary functionalized). The repetition of these two steps allows to consider the controlled formation of phthalocyanines multilayers by self-assembling. The main substrates used are the silicon oxide and the gold. Their different characteristics have imposed the development of separate functionalization and characterization methods. The results obtained with these two substrates are separately described. A second method of construction of successive monolayers of phthalocyanines is described involving a chemical coupling between an amine function carried out by the substrate and an aldehyde function present on the ligands bound on ruthenium. (author) [fr

  18. Chemically-induced solid-state dewetting of thin Au films

    International Nuclear Information System (INIS)

    Gazit, Nimrod; Klinger, Leonid; Rabkin, Eugen

    2017-01-01

    We employed the solid state dewetting technique to produce nanoparticles of silver-gold alloy on a sapphire substrate. We deposited a thin gold layer on the substrate with alloy nanoparticles, and studied its thermal stability at low homological temperatures. We demonstrated that a large number of densely spaced holes form at the initial stages of dewetting of the gold layer with nanoparticles. A similar homogeneous gold film deposited on a bare sapphire substrate remained stable under identical annealing conditions, exhibiting the onset of dewetting at higher temperatures, and with a lower number of holes. We attributed the decreased thermal stability of the gold film deposited on the substrate with the silver-gold nanoparticles to accelerated grooving at the grain boundaries and triple junctions in the film. The grooving process is accelerated by the diffusion fluxes of Au atoms driven from the film towards the nanoparticles by the gradient of chemical potential. We developed a quantitative model of this chemically-induced dewetting process, and discussed its applicability for the design of better catalytic systems. Our work demonstrates that the chemical driving forces have to be reckoned with in the analysis of thermal stability of multicomponent thin films.

  19. Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

    2014-09-15

    The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

  20. Thickness effects of yttria-doped ceria interlayers on solid oxide fuel cells

    Science.gov (United States)

    Fan, Zeng; An, Jihwan; Iancu, Andrei; Prinz, Fritz B.

    2012-11-01

    Determining the optimal thickness range of the interlayed yttria-doped ceria (YDC) films promises to further enhance the performance of solid oxide fuel cells (SOFCs) at low operating temperatures. The YDC interlayers are fabricated by the atomic layer deposition (ALD) method with one super cycle of the YDC deposition consisting of 6 ceria deposition cycles and one yttria deposition cycle. YDC films of various numbers of ALD super cycles, ranging from 2 to 35, are interlayered into bulk fuel cells with a 200 um thick yttria-stabilized zirconia (YSZ) electrolyte. Measurements and analysis of the linear sweep voltammetry of these fuel cells reveal that the performance of the given cells is maximized at 10 super cycles. Auger elemental mapping and X-ray photoelectron spectroscopy (XPS) techniques are employed to determine the film completeness, and they verify 10 super cycles of YDC to be the critical thickness point. This optimal YDC interlayer condition (6Ce1Y × 10 super cycles) is applied to the case of micro fuel cells as well, and the average performance enhancement factor is 1.4 at operating temperatures of 400 and 450 °C. A power density of 1.04 W cm-2 at 500 °C is also achieved with the optimal YDC recipe.

  1. Simultaneous measurement of dynamic force and spatial thin film thickness between deformable and solid surfaces by integrated thin liquid film force apparatus.

    Science.gov (United States)

    Zhang, Xurui; Tchoukov, Plamen; Manica, Rogerio; Wang, Louxiang; Liu, Qingxia; Xu, Zhenghe

    2016-11-09

    Interactions involving deformable surfaces reveal a number of distinguishing physicochemical characteristics that do not exist in interactions between rigid solid surfaces. A unique fully custom-designed instrument, referred to as integrated thin liquid film force apparatus (ITLFFA), was developed to study the interactions between one deformable and one solid surface in liquid. Incorporating a bimorph force sensor with interferometry, this device allows for the simultaneous measurement of the time-dependent interaction force and the corresponding spatiotemporal film thickness of the intervening liquid film. The ITLFFA possesses the specific feature of conducting measurement under a wide range of hydrodynamic conditions, with a displacement velocity of deformable surfaces ranging from 2 μm s -1 to 50 mm s -1 . Equipped with a high speed camera, the results of a bubble interacting with hydrophilic and partially hydrophobic surfaces in aqueous solutions indicated that ITLFFA can provide information on interaction forces and thin liquid film drainage dynamics not only in a stable film but also in films of the quick rupture process. The weak interaction force was extracted from a measured film profile. Because of its well-characterized experimental conditions, ITLFFA permits the accurate and quantitative comparison/validation between measured and calculated interaction forces and temporal film profiles.

  2. Durable and Robust Solid Oxide Fuel Cells

    DEFF Research Database (Denmark)

    Hjalmarsson, Per; Knibbe, Ruth; Hauch, Anne

    project had as one of its’ overarching goals to improve durability and robustness of the Danish solid oxide fuel cells. The project focus was on cells and cell components suitable for SOFC operation in the temperature range 600 – 750 °C. The cells developed and/or studied in this project are intended......The solid oxide fuel cell (SOFC) is an attractive technology for the generation of electricity with high efficiency and low emissions. Risø DTU (now DTU Energy Conversion) works closely together with Topsoe Fuel Cell A/S in their effort to bring competitive SOFC systems to the market. This 2-year...... for use within the CHP (Combined Heat and Power) market segment with stationary power plants in the range 1 – 250 kWe in mind. Lowered operation temperature is considered a good way to improve the stack durability since corrosion of the interconnect plates in a stack is lifetime limiting at T > 750 °C...

  3. Assessment of bio-fuel options for solid oxide fuel cell applications

    Science.gov (United States)

    Lin, Jiefeng

    Rising concerns of inadequate petroleum supply, volatile crude oil price, and adverse environmental impacts from using fossil fuels have spurred the United States to promote bio-fuel domestic production and develop advanced energy systems such as fuel cells. The present dissertation analyzed the bio-fuel applications in a solid oxide fuel cell-based auxiliary power unit from environmental, economic, and technological perspectives. Life cycle assessment integrated with thermodynamics was applied to evaluate the environmental impacts (e.g., greenhouse gas emission, fossil energy consumption) of producing bio-fuels from waste biomass. Landfill gas from municipal solid wastes and biodiesel from waste cooking oil are both suggested as the promising bio-fuel options. A nonlinear optimization model was developed with a multi-objective optimization technique to analyze the economic aspect of biodiesel-ethanol-diesel ternary blends used in transportation sectors and capture the dynamic variables affecting bio-fuel productions and applications (e.g., market disturbances, bio-fuel tax credit, policy changes, fuel specification, and technological innovation). A single-tube catalytic reformer with rhodium/ceria-zirconia catalyst was used for autothermal reformation of various heavy hydrocarbon fuels (e.g., diesel, biodiesel, biodiesel-diesel, and biodiesel-ethanol-diesel) to produce a hydrogen-rich stream reformates suitable for use in solid oxide fuel cell systems. A customized mixing chamber was designed and integrated with the reformer to overcome the technical challenges of heavy hydrocarbon reformation. A thermodynamic analysis, based on total Gibbs free energy minimization, was implemented to optimize the operating environment for the reformations of various fuels. This was complimented by experimental investigations of fuel autothermal reformation. 25% biodiesel blended with 10% ethanol and 65% diesel was determined to be viable fuel for use on a truck travelling with

  4. Preparation of SDC electrolyte thin films on dense and porous substrates by modified sol-gel route

    International Nuclear Information System (INIS)

    Lin Hongfei; Ding, Changsheng; Sato, Kazuhisa; Tsutai, Yoshifumi; Ohtaki, Hiromichi; Iguchi, Mabito; Wada, Chiharu; Hashida, Toshiyuki

    2008-01-01

    Nanocrystalline fluorite type samarium doped ceria (SDC) electrolyte thin film for intermediate temperature-solid oxide fuel cells (IT-SOFCs) application were prepared on the dense and porous substrates at low temperatures of 573-1373 K using a novel citrate sol-gel route combined with a sol suspension spray coating technique. Thermogravimetric analysis showed that the decomposition of the citrate gel film and the initial crystallization of the SDC occurred at a low temperature of about 590 K. XRD examination revealed that the annealing of the green film at temperatures of 573-1373 K provided cubic nanocrystalline SDC phase. The crystallite sizes were in the range of 9-19 nm. Microscopic observations indicated that the derived film was homogeneous, dense and crack-free without pinholes. The desired thickness for preparation of thin electrolyte films from hundreds of nm to several μm should be controllable and feasible by repeating the simple and inexpensive citrate sol-gel spray coating process

  5. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  6. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    OpenAIRE

    Ruijin Hong; Jialin Ji; Chunxian Tao; Daohua Zhang; Dawei Zhang

    2017-01-01

    Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO) and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD), optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B ...

  7. Study on the Preparation and Properties of Colored Iron Oxide Thin Films

    International Nuclear Information System (INIS)

    Zhao Xianhui; Li Changhong; Liu Qiuping; He Junjing; Wang Hai; Liang Song; Duan Yandong; Liu Su

    2013-01-01

    Colored iron oxide thin films were prepared using Sol-gel technique. The raw materials were tetraethyl orthosilicate (TEOS), etoh ehanol (EtOH), iron nitrate, and de-ionized water. Various properties were measured and analysed, including the colour of thin films, surface topography, UV-Visible spectra, corrosion resistance and hydrophobicity. To understand how these properties influenced the structural and optical properties of Fe 2 O 3 thin films, Scanning Electron Microscope (SEM), UV Spectrophotometer and other facilities were employed. Many parameters influence the performance of thin films, such as film layers, added H 2 O content, and the amount of polydimethylsiloxane (PDMS). When the volume ratio of TEOS, EtOH and H 2 O was 15: 13: 1, the quality of Fe(NO 3 ) 3 ·9H 2 O was 6g, and pH value was 3, reddish and uniform Fe 2 O 3 thin films with excellent properties were produced. Obtained thin films possessed corrosion resistance in hydrochloric acid with pH=l and the absorption edge wavelength was ∼350.2nm. Different H 2 O contents could result in different morphologies of Fe 2 O 3 nanoparticles. When 1.5 ml PDMS was added into the Sol, thin films possessed hydrophobiliry without dropping. Coating with different layers, thin films appeared different morphologies. Meanwhile, with the increment of film layers, the absorbance increased gradually.

  8. Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

    Science.gov (United States)

    Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

    2018-05-01

    The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

  9. The Microstructures and Electrical Resistivity of (Al, Cr, TiFeCoNiOx High-Entropy Alloy Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Chun-Huei Tsau

    2015-01-01

    Full Text Available The (Al, Cr, TiFeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.

  10. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  11. Development of neutron diffuse scattering analysis code by thin film and multilayer film

    International Nuclear Information System (INIS)

    Soyama, Kazuhiko

    2004-01-01

    To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

  12. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rodenbücher, C. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); Hildebrandt, E.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Alff, L. [Technische Universität Darmstadt, Institute of Materials Science, 64287 Darmstadt (Germany); Szot, K. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); University of Silesia, A. Chełkowski Institute of Physics, 40-007 Katowice (Poland); Breuer, U. [Forschungszentrum Jülich GmbH, Central Institute for Engineering, Electronics and Analytics (ZEA-3), 52425 Jülich (Germany); Waser, R. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); RWTH Aachen, Institute of Electronic Materials (IWE 2), 52056 Aachen (Germany)

    2016-06-20

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  13. Effect of Annealing on Tungsten Oxide Thin Films for Acetone Gas ...

    Indian Academy of Sciences (India)

    11

    Abstract: The gas sensing properties and topology of tungsten oxide thin films ..... Figure 3: Atomic force microscopy images of sensing film for (a) as-deposited (a) .... the surface, it forms compounds with the oxygen ions species present on the ...

  14. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  15. Effect of post annealing treatment on electrochromic properties of spray deposited niobium oxide thin films

    International Nuclear Information System (INIS)

    Mujawar, S.H.; Inamdar, A.I.; Betty, C.A.; Ganesan, V.; Patil, P.S.

    2007-01-01

    Niobium oxide thin films were deposited on the glass and fluorine doped tin oxide (FTO) coated glass substrates using simple and inexpensive spray pyrolysis technique. During deposition of the films various process parameters like nozzle to substrate distance, spray rate, concentration of sprayed solution were optimized to obtain well adherent and transparent films. The films prepared were further annealed and effect of post annealing on the structural, morphological, optical and electrochromic properties was studied. Structural and morphological characterizations of the films were carried out using scanning electron microscopy, atomic force microscopy and X-ray diffraction techniques. Electrochemical properties of the niobium oxide thin films were studied by using cyclic-voltammetry, chronoamperometry and chronocoulometry

  16. Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Haenel, T.; Lee, K.Y.; Rau, B.; Ruske, F.; Weber, T.; Gall, S.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie (formerly Hahn-Meitner-Institut Berlin), Kekulestr. 5, D-12489 Berlin (Germany); Berginski, M.; Huepkes, J. [Institute of Photovoltaics, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)

    2009-06-15

    The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 {omega} after 22 h annealing at 600 C and only slightly increases for a 200 s heat treatment at 900 C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 C. (author)

  17. Deposition and characterization of NbAIN thin films by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Carvalho, R.G.; Felix, L.C.; Fernandez, D.A.R.; Fontes Junior, A.S.; Oliveira, G.B.; Tentardini, E.K.

    2016-01-01

    The objective of this work was to study NbAlN thin films and the influence of variation in the concentration of aluminum in the crystal structure and oxidation resistance of these coatings. The thin films were deposited by reactive magnetron sputtering and characterized by Grazing Incidence X-ray Diffraction (GIXRD), Energy Dispersive Spectroscopy (EDS) and oxidation tests at high temperatures. NbAlN thin films were deposited and present at concentration of 10, 20 and 42 at% Al. The NbAlN crystalline phase obtained was the δ-NbN, however it was observed a shift of the peaks in the patterns obtained GIXRD of regions for larger angles for these samples, indicating the formation of a solid solution. The higher oxidation resistance temperature was 700° C for the sample with 42 in at% Al. From the SEM analysis it was possible to observe the surface of the film after oxidation, all films showed defects, however the amount of such defects was lower in samples with higher aluminum concentrations. (author)

  18. Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

    Science.gov (United States)

    Muslih, E. Y.; Kim, K. H.

    2017-07-01

    Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

  19. Tungsten oxide thin films obtained by anodisation in low electrolyte concentration

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Nadja B.D. da [Centro de Ciências Químicas, Farmacêuticas e de Alimentos, Universidade Federal de Pelotas, Campus Capão do Leão, s/n, Pelotas, RS (Brazil); Pazinato, Julia C.O. [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Sombrio, Guilherme; Pereira, Marcelo B.; Boudinov, Henri [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Gündel, André; Moreira, Eduardo C. [Universidade Federal do Pampa, Travessa 45, 1650 Bagé, RS (Brazil); Garcia, Irene T.S., E-mail: irene.garcia@ufrgs.br [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil)

    2015-03-02

    Tungsten oxide nanostructured films were grown on tungsten substrates by anodisation under a fixed voltage and with sodium fluoride as electrolyte. The effect of the anion chloride and the influence of the modifying agent disodium hydrogen phosphate in the tungsten oxide films were also investigated. The structural characterisation of the films was performed by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The band gap was determined through diffuse reflectance spectroscopy. The thin films were photoluminescent and emitted in the range of 300 to 630 nm when irradiated at 266 nm. The synthesised films efficiently degraded of methyl orange dye in the presence of hydrogen peroxide and 250 nm radiation. The modifying agent was responsible for the improvement of the photocatalytic activity. Films with similar photocatalytic performance were obtained when the system sodium fluoride and disodium hydrogen phosphate were replaced by sodium chloride. The porous structure and low band gap values were responsible for the photocatalytic behaviour. - Highlights: • Tungsten oxide thin films were obtained by anodisation of tungsten in aqueous media. • The performance of the NaCl, NaF and NaF/Na{sub 2}HPO{sub 4} as electrolytes was investigated. • The relation between structure and optical behaviour has been discussed. • Films obtained with NaCl and NaF/Na{sub 2}HPO{sub 4} present similar photocatalytic activity.

  20. Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

    International Nuclear Information System (INIS)

    Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

    2007-01-01

    Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) ∼2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization

  1. Ion beam analysis of PECVD silicon oxide thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

    2006-01-01

    A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

  2. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  3. Micro-Solid Oxide Fuel Cell: A multi-fuel approach for portable applications

    International Nuclear Information System (INIS)

    Patil, Tarkeshwar C.; Duttagupta, Siddhartha P.

    2016-01-01

    Highlights: • We report the oxygen ion transport properties at the electrode–electrolyte interface (EEI) of the SOFC for the first time. • This ion transport plays a key role in the overall performance of SOFCs with different fuels. • The GIIB mechanism is also studied for the first time. • GIIB is assumed to be the prime reason for low power density and ion conductivity at the EEI when using hydrocarbon fuels. • Due to its scalability, a fuel cell can serve as a power source for on-chip applications and all portable equipment. - Abstract: The impact of oxygen ion transport at the electrolyte–electrode interface of a micro-solid oxide fuel cell using different fuels is investigated. Model validation is performed to verify the results versus the reported values. Furthermore, as the hydrogen-to-carbon ratio decreases, the diffusivity of the oxygen ion increases. This increase in diffusivity is observed because the number of hydrogen atoms available as the reacting species increases in fuels with lower hydrogen-to-carbon ratios. The oxygen ion conductivity and output power density decrease as the hydrogen-to-carbon ratio of the fuels decreases. The reason behind this impact is the formation of a gas-induced ion barrier at the electrode–electrolyte interface by the CO_2 molecules formed during the reaction at the interface, thus blocking the flow of oxygen ions. As the oxygen ions become blocked, the output current contribution from the reaction also decreases and thereby affects the overall performance of the micro-solid oxide fuel cell. The experimental verification confirms this because of a significant decrease in the output power density. Furthermore, as per the application in portable devices, the appropriate choice of fuel can be chosen so that the micro-solid oxide fuel cell operates at the maximum power density.

  4. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    International Nuclear Information System (INIS)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

    2012-01-01

    Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  5. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g m change, threshold voltage V T change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

  6. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw; Lin, Yung-Hao; Lin, Jhong-Ham [Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  7. SOLID STATE ENERGY CONVERSION ALLIANCE DELPHI SOLID OXIDE FUEL CELL

    Energy Technology Data Exchange (ETDEWEB)

    Steven Shaffer; Sean Kelly; Subhasish Mukerjee; David Schumann; Gail Geiger; Kevin Keegan; John Noetzel; Larry Chick

    2003-12-08

    The objective of Phase I under this project is to develop a 5 kW Solid Oxide Fuel Cell power system for a range of fuels and applications. During Phase I, the following will be accomplished: Develop and demonstrate technology transfer efforts on a 5 kW stationary distributed power generation system that incorporates steam reforming of natural gas with the option of piped-in water (Demonstration System A). Initiate development of a 5 kW system for later mass-market automotive auxiliary power unit application, which will incorporate Catalytic Partial Oxidation (CPO) reforming of gasoline, with anode exhaust gas injected into an ultra-lean burn internal combustion engine. This technical progress report covers work performed by Delphi from January 1, 2003 to June 30, 2003, under Department of Energy Cooperative Agreement DE-FC-02NT41246. This report highlights technical results of the work performed under the following tasks: Task 1 System Design and Integration; Task 2 Solid Oxide Fuel Cell Stack Developments; Task 3 Reformer Developments; Task 4 Development of Balance of Plant (BOP) Components; Task 5 Manufacturing Development (Privately Funded); Task 6 System Fabrication; Task 7 System Testing; Task 8 Program Management; and Task 9 Stack Testing with Coal-Based Reformate.

  8. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  9. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  10. Fabrication and characterization of a cathode-supported tubular solid oxide fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Chunhua; Liu, Renzhu; Wang, Shaorong; Wang, Zhenrong; Qian, Jiqin; Wen, Tinglian [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), 1295 Dingxi Road, Shanghai 200050 (China)

    2009-07-15

    A cathode-supported tubular solid oxide fuel cell (CTSOFC) with the length of 6.0 cm and outside diameter of 1.0 cm has been successfully fabricated via dip-coating and co-sintering techniques. A crack-free electrolyte film with a thickness of {proportional_to}14 {mu}m was obtained by co-firing of cathode/cathode active layer/electrolyte/anode at 1250 C. The relative low densifying temperature for electrolyte was attributed to the large shrinkage of the green tubular which assisted the densification of electrolyte. The assembled cell was electrochemically characterized with humidified H{sub 2} as fuel and O{sub 2} as oxidant. The open circuit voltages (OCV) were 1.1, 1.08 and 1.06 V at 750, 800 and 850 C, respectively, with the maximum power densities of 157, 272 and 358 mW cm{sup -2} at corresponding temperatures. (author)

  11. Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saporiti, F.; Juarez, R. E., E-mail: cididi@fi.uba.ar [Grupo de Materiales Avanzados, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Audebert, F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Boudard, M. [Laboratoire des Materiaux et du Genie Physique (CNRS), Grenoble (France)

    2013-11-01

    The Yttria stabilized Zirconia (YSZ) is a standard electrolyte for solid oxide fuel cells (SOFCs), which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ) and films with addition of 4 weight% Ceria (8YSZ + 4CeO{sub 2}) were grown by pulsed laser deposition (PLD) technique using 8YSZ and 8YSZ + 4CeO{sub 2} targets and a Nd-YAG laser (355 nm). Films have been deposited on Soda-Calcia-Silica glass and Si(100) substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 Micro-Sign m were grown on different substrates (author)

  12. TiFeCoNi oxide thin film - A new composition with extremely low electrical resistivity at room temperature

    International Nuclear Information System (INIS)

    Yang, Ya-Chu; Tsau, Chun-Huei; Yeh, Jien-Wei

    2011-01-01

    We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.

  13. Investigation of structural, morphological and electrical properties of APCVD vanadium oxide thin films

    International Nuclear Information System (INIS)

    Papadimitropoulos, Georgios; Trantalidis, Stelios; Tsiatouras, Athanasios; Vasilopoulou, Maria; Davazoglou, Dimitrios; Kostis, Ioannis

    2015-01-01

    Vanadium oxide films were chemically vapor deposited (CVD) on oxidized Si substrates covered with CVD tungsten (W) thin films and on glass substrates covered with indium tin oxide (ITO) films, using vanadium(V) oxy-tri-isopropoxide (C 9 H 21 O 4 V) vapors. X-ray diffraction (XRD) measurements showed that the deposited films were composed of a mixture of vanadium oxides; the composition was determined mainly by the deposition temperature and less by the precursor temperature. At temperatures up to 450 C the films were mostly composed by monoclinic VO 2 . Other peaks corresponding to various vanadium oxides were also observed. X-ray microanalysis confirmed the composition of the films. The surface morphology was studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM). These measurements revealed that the morphology strongly depends on the used substrate and the deposition conditions. The well-known metal-insulator transition was observed near 75 C for films mostly composed by monoclinic VO 2 . Films deposited at 450 C exhibited two transitions one near 50 C and the other near 60 C possibly related to the presence of other vanadium phases or of important stresses in them. Finally, the vanadium oxide thin films exhibited significant sensory capabilities decreasing their resistance in the presence of hydrogen gas with response times in the order of a few seconds and working temperature at 40 C. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Superconducting oxide thin films by ion beam sputtering

    International Nuclear Information System (INIS)

    Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

    1987-01-01

    Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

  15. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  16. Solid State Energy Conversion Alliance (SECA) Solid Oxide Fuel Cell Program

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Minh

    2006-07-31

    This report summarizes the work performed for Phase I (October 2001 - August 2006) under Cooperative Agreement DE-FC26-01NT41245 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled 'Solid State Energy Conversion Alliance (SECA) Solid Oxide Fuel Cell Program'. The program focuses on the development of a low-cost, high-performance 3-to-10-kW solid oxide fuel cell (SOFC) system suitable for a broad spectrum of power-generation applications. During Phase I of the program significant progress has been made in the area of SOFC technology. A high-efficiency low-cost system was designed and supporting technology developed such as fuel processing, controls, thermal management, and power electronics. Phase I culminated in the successful demonstration of a prototype system that achieved a peak efficiency of 41%, a high-volume cost of $724/kW, a peak power of 5.4 kW, and a degradation rate of 1.8% per 500 hours. . An improved prototype system was designed, assembled, and delivered to DOE/NETL at the end of the program. This prototype achieved an extraordinary peak efficiency of 49.6%.

  17. STRUCTURAL, PHOTO-FUNCTIONAL AND SEMICONDUCTOR PROPERTIES OF COPPER OXIDE THIN FILMS PREPARED BY DC REACTIVE METHOD UNDER VARIOUS THICKNESSES Anmar H. Shukur

    Directory of Open Access Journals (Sweden)

    Anmar H. Shukur

    2018-01-01

    Full Text Available Cuprous oxide (Cu2O has been formed on glass substrates by dc reactive magnetron sputtering method, whereas pure target of the solid copper was sputtered with a mixture of plasma for argon gas and oxygen gas was used to form these films. Under vacuum chamber pressure of 1.2×10-5 Pa, thin film thickness was changed from 100 nm to 300 nm while other deposition parameters were fixed. The influence of changing the thickness of thin films on the electrical and the optical properties was investigated in this study. X-ray photoelectron spectroscopy (XPS, X-ray Diffractions system XRD, Atomic Force Microscopy (AFM, hall effect measurement system, UV–VIS spectrophotometer were employed to determine the characteristic of the deposited thin films. Thin film of 200 nm has observed low resistivity of 60.63 Ω cm and direct band gap of 2.5eV. This study has demonstrated that the thickness has direct influence on electrical and optical properties.

  18. Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

    Directory of Open Access Journals (Sweden)

    Mia Nasrul Haque

    2017-10-01

    Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

  19. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    International Nuclear Information System (INIS)

    Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

    2013-01-01

    Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

  20. Stability of solid oxide fuel cell materials

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, T.R.; Bates, J.L.; Chick, L.A. [Pacific Northwest Lab., Richland, WA (United States)

    1996-04-01

    Interconnection materials in a solid oxide fuel cell are exposed to both highly oxidizing conditions at the cathode and to highly reducing conditions at the anode. The thermal expansion characteristics of substituted lanthanum and yttrium chromite interconnect materials were evaluated by dilatometry as a function of oxygen partial pressures from 1 atm to 10{sup -18} atm, controlled using a carbon dioxide/hydrogen buffer.

  1. Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aryanto, Didik, E-mail: didi027@lipi.go.id [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Marwoto, Putut; Sugianto [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Sudiro, Toto [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Birowosuto, Muhammad D. [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, level 6, 637553 (Singapore); Sulhadi [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)

    2016-04-19

    Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtained at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.

  2. PREFACE: INERA Workshop: Transition Metal Oxide Thin Films-functional Layers in "Smart windows" and Water Splitting Devices. Parallel session of the 18th International School on Condensed Matter Physics

    Science.gov (United States)

    2014-11-01

    The Special issue presents the papers for the INERA Workshop entitled "Transition Metal Oxides as Functional Layers in Smart windows and Water Splitting Devices", which was held in Varna, St. Konstantin and Elena, Bulgaria, from the 4th-6th September 2014. The Workshop is organized within the context of the INERA "Research and Innovation Capacity Strengthening of ISSP-BAS in Multifunctional Nanostructures", FP7 Project REGPOT 316309 program, European project of the Institute of Solid State Physics at the Bulgarian Academy of Sciences. There were 42 participants at the workshop, 16 from Sweden, Germany, Romania and Hungary, 11 invited lecturers, and 28 young participants. There were researchers present from prestigious European laboratories which are leaders in the field of transition metal oxide thin film technologies. The event contributed to training young researchers in innovative thin film technologies, as well as thin films characterization techniques. The topics of the Workshop cover the field of technology and investigation of thin oxide films as functional layers in "Smart windows" and "Water splitting" devices. The topics are related to the application of novel technologies for the preparation of transition metal oxide films and the modification of chromogenic properties towards the improvement of electrochromic and termochromic device parameters for possible industrial deployment. The Workshop addressed the following topics: Metal oxide films-functional layers in energy efficient devices; Photocatalysts and chemical sensing; Novel thin film technologies and applications; Methods of thin films characterizations; From the 37 abstracts sent, 21 manuscripts were written and later refereed. We appreciate the comments from all the referees, and we are grateful for their valuable contributions. Guest Editors: Assoc. Prof. Dr.Tatyana Ivanova Prof. DSc Kostadinka Gesheva Prof. DSc Hassan Chamatti Assoc. Prof. Dr. Georgi Popkirov Workshop Organizing Committee Prof

  3. Differential reflectometry of thin film metal oxides on copper, tungsten, molybdenum and chromium

    International Nuclear Information System (INIS)

    Urban, F.K. III; Hummel, R.E.; Verink, E.D. Jr.

    1982-01-01

    A differential reflectometry study was undertaken to investigate the characteristics of thin oxide films on metal substrates. The oxides were produced by heating pure metals of copper, tungsten, molybdenum and chromium in dry oxygen. A new 'halfpolishing' technique was applied to obtain specimens with a step in oxide thickness in order to make them suitable for differential reflectometry. It was found that oxides formed this way yielded the same differential reflectograms as by electrochemical oxidation. A mathematical model involving the interaction of light with a thin corrosion product on metal substrates was applied to generate computer calculated differential reflectograms utilizing various optical constants and thicknesses of the assumed film. Three different thickness ranges have been identified. (a) For large film thicknesses, the differential reflectograms are distinguished by a sequence of interference peaks. (b) If the product of thickness and refraction index of the films is smaller than about 40 nm, no interference peaks are present. Any experimentally observed peaks in differential reflectograms of these films are caused entirely by electron interband transitions. (c) In an intermediate thickness range, superposition of interference and interband peaks are observed. (author)

  4. Conversion of hydrocarbons in solid oxide fuel cells

    DEFF Research Database (Denmark)

    Mogensen, Mogens Bjerg; Kammer Hansen, K.

    2003-01-01

    Recently, a number of papers about direct oxidation of methane and hydrocarbon in solid oxide fuel cells (SOFC) at relatively low temperatures (about 700degreesC) have been published. Even though the conversion of almost dry CH4 at 1000degreesC on ceramic anodes was demonstrated more than 10 years...

  5. LG Solid Oxide Fuel Cell (SOFC) Model Development

    Energy Technology Data Exchange (ETDEWEB)

    Haberman, Ben [LG Fuel Cell Systems Inc., North Canton, OH (United States); Martinez-Baca, Carlos [LG Fuel Cell Systems Inc., North Canton, OH (United States); Rush, Greg [LG Fuel Cell Systems Inc., North Canton, OH (United States)

    2013-05-31

    This report presents a summary of the work performed by LG Fuel Cell Systems Inc. during the project LG Solid Oxide Fuel Cell (SOFC) Model Development (DOE Award Number: DE-FE0000773) which commenced on October 1, 2009 and was completed on March 31, 2013. The aim of this project is for LG Fuel Cell Systems Inc. (formerly known as Rolls-Royce Fuel Cell Systems (US) Inc.) (LGFCS) to develop a multi-physics solid oxide fuel cell (SOFC) computer code (MPC) for performance calculations of the LGFCS fuel cell structure to support fuel cell product design and development. A summary of the initial stages of the project is provided which describes the MPC requirements that were developed and the selection of a candidate code, STAR-CCM+ (CD-adapco). This is followed by a detailed description of the subsequent work program including code enhancement and model verification and validation activities. Details of the code enhancements that were implemented to facilitate MPC SOFC simulations are provided along with a description of the models that were built using the MPC and validated against experimental data. The modeling work described in this report represents a level of calculation detail that has not been previously available within LGFCS.

  6. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  7. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    Science.gov (United States)

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

  8. Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

    Directory of Open Access Journals (Sweden)

    Mihaela Girtan

    2017-05-01

    Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

  9. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    Directory of Open Access Journals (Sweden)

    Ruijin Hong

    2017-01-01

    Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

  10. Performance Evaluation of Solid Oxide Fuel Cell by Computer ...

    African Journals Online (AJOL)

    The search for sustainable energy source that can compete with the existing one led to the discovery and acceptance of fuel cell technologies as a perfect replacement for fossil fuel. The ability of Solid Oxide Fuel Cells (SOFC) to capture the heat generation during the process of energy generation from electrochemical ...

  11. Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics.

    Science.gov (United States)

    Shen, Lvkang; Wu, Liang; Sheng, Quan; Ma, Chunrui; Zhang, Yong; Lu, Lu; Ma, Ji; Ma, Jing; Bian, Jihong; Yang, Yaodong; Chen, Aiping; Lu, Xiaoli; Liu, Ming; Wang, Hong; Jia, Chun-Lin

    2017-09-01

    Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter-scaled single-crystalline LiFe 5 O 8 thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as-grown films with respect to the microstructure. In particular, the transferred LiFe 5 O 8 films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single-crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Deposition of La0.8Sr0.2Cr0.97V0.03O3 and MnCr2O4 thin films on ferritic alloy for solid oxide fuel cell application

    DEFF Research Database (Denmark)

    Mikkelsen, Lars; Chen, Ming; Hendriksen, Peter Vang

    2007-01-01

    . The effects of the deposited thin films on the growth rate and the morphology of the oxide were investigated by weight gain measurements as well as by scanning electron microscopy. The growth of the oxide scales was reduced by both coatings, and most effectively by the LSC coating. The overall oxidation...

  13. Solid oxide fuel cells with apatite-type lanthanum silicate-based electrolyte films deposited by radio frequency magnetron sputtering

    Science.gov (United States)

    Liu, Yi-Xin; Wang, Sea-Fue; Hsu, Yung-Fu; Wang, Chi-Hua

    2018-03-01

    In this study, solid oxide fuel cells (SOFCs) containing high-quality apatite-type magnesium doped lanthanum silicate-based electrolyte films (LSMO) deposited by RF magnetron sputtering are successfully fabricated. The LSMO film deposited at an Ar:O2 ratio of 6:4 on an anode supported NiO/Sm0.2Ce0·8O2-δ (SDC) substrate followed by post-annealing at 1000 °C reveals a uniform and dense c-axis oriented polycrystalline structure, which is well adhered to the anode substrate. A composite SDC/La0·6Sr0·4Co0·2Fe0·8O3-δ cathode layer is subsequently screen-printed on the LSMO deposited anode substrate and fired. The SOFC fabricated with the LSMO film exhibits good mechanical integrity. The single cell with the LSMO layer of ≈2.8 μm thickness reports a total cell resistance of 1.156 and 0.163 Ωcm2, open circuit voltage of 1.051 and 0.982 V, and maximum power densities of 0.212 and 1.490 Wcm-2 at measurement temperatures of 700 and 850 °C, respectively, which are comparable or superior to those of previously reported SOFCs with yttria stabilized zirconia electrolyte films. The results of the present study demonstrate the feasibility of deposition of high-quality LSMO films by RF magnetron sputtering on NiO-SDC anode substrates for the fabrication of SOFCs with good cell performance.

  14. Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery

    International Nuclear Information System (INIS)

    Kim, Han-Ki; Yoon, Young Soo

    2004-01-01

    We report on the fabrication of a LiCoO 2 film for an all-solid-state thin film microbattery by using a rapid-thermal-annealing (RTA) process. The LiCoO 2 films were grown by rf magnetron sputtering using a synthesized LiCoO 2 target in a [O 2 /(Ar+O 2 )] ratio of 10%. Scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) analysis results showed that the surface layer on the as-deposited LiCoO 2 film was completely removed by rapid thermal annealing process in oxygen ambient for 20 min. In addition, the thin film microbattery fabricated with the annealed LiCoO 2 film shows fairly stable cyclability with a specific discharge capacity of 56.49 μAh/cm2 μm. These results show the possibility of the RTA LiCoO 2 film and rapid thermal annealing process being a promising cathode material and annealing process for thin film microbatteries, respectively

  15. An investigation of room temperature ''oxidized'' thin films of A1 for photovoltaic applications

    International Nuclear Information System (INIS)

    Adegboyega, G.A.

    1985-12-01

    Sheet resistance and transmittance changes of thin films of A1 evaporated in high vacuum were measured during sorption of oxygen at room atmosphere. An increase of both sheet resistance and transmittance with a tendency to saturation has been observed. Evaluation of various thicknesses of the films for possible use as transparent electrode material for photovoltaic applications shows that for very thin films ( = 200 A) the ''oxidized'' films are superior. (author)

  16. Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Bong Ju Lee

    2015-01-01

    Full Text Available Al-doped zinc-oxide (AZO thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021 to 6.16 × 1017 cm−3 with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD patterns show that the (002/(103 peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS of the O1s were decomposed into metal oxide component (peak A and the adsorbed molecular oxygen on thin films (peak B. The area ratio of XPS peaks (A/B was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

  17. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Energy Technology Data Exchange (ETDEWEB)

    Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

    2016-12-15

    Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

  18. Relationships among surface processing at the nanometer scale, nanostructure and optical properties of thin oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria

    2004-05-01

    Spectroscopic ellipsometry is used to study the optical properties of nanostructured semiconductor oxide thin films. Various examples of models for the dielectric function, based on Lorentzian oscillators combined with the Drude model, are given based on the band structure of the analyzed oxide. With this approach, the optical properties of thin films are determined independent of the dielectric functions of the corresponding bulk materials, and correlation between the optical properties and nanostructure of thin films is investigated. In particular, in order to discuss the dependence of optical constants on grain size, CeO{sub 2} nanostructured films are considered and parameterized by two-Lorentzian oscillators or two-Tauc-Lorentz model depending on the nanostructure and oxygen deficiency. The correlation among anisotropy, crystalline fraction and optical properties parameterized by a four-Lorentz oscillator model is discussed for nanocrystalline V{sub 2}O{sub 5} thin films. Indium tin oxide thin films are discussed as an example of the presence of graded optical properties related to interfacial reactivity activated by processing conditions. Finally, the example of ZnO shows the potential of ellipsometry in discerning crystal and epitaxial film polarity through the analysis of spectra and the detection of surface reactivity of the two polar faces, i.e. Zn-polarity and O-polarity.

  19. On the intrinsic transient capability and limitations of solid oxide fuel cell systems

    OpenAIRE

    Mueller, F; Jabbari, F; Brouwer, J

    2009-01-01

    The intrinsic transient performance capability and limitation of integrated solid oxide fuel cell (SOFC) systems is evaluated based on the system balance-of-plant response and fuel cell operating requirements (i.e., allowable deviation from nominal operation). Specifically, non-dimensional relations are derived from conservation principles that quantify the maximum instantaneous current increase that a solid oxide fuel cell system can safely manage based on (1) the desired fuel cell operating...

  20. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Quesnel, David J. [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627 (United States)

    2015-12-21

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

  1. A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

    Science.gov (United States)

    Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

    2013-03-01

    Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

  2. Redox Stable Anodes for Solid Oxide Fuel Cells

    Directory of Open Access Journals (Sweden)

    Guoliang eXiao

    2014-06-01

    Full Text Available Solid oxide fuel cells (SOFCs can convert chemical energy from the fuel directly to electrical energy with high efficiency and fuel flexibility. Ni-based cermets have been the most widely adopted anode for SOFCs. However, the conventional Ni-based anode has low tolerance to sulfur-contamination, is vulnerable to deactivation by carbon build-up (coking from direct oxidation of hydrocarbon fuels, and suffers volume instability upon redox cycling. Among these limitations, the redox instability of the anode is particularly important and has been intensively studied since the SOFC anode may experience redox cycling during fuel cell operations even with the ideal pure hydrogen as the fuel. This review aims to highlight recent progresses on improving redox stability of the conventional Ni-based anode through microstructure optimization and exploration of alternative ceramic-based anode materials.

  3. All-solid-state thin film battery based on well-aligned slanted LiCoO{sub 2} nanowires fabricated by glancing angle deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Miyoung [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Seunghwan [High Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Daehee [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Joosun, E-mail: joosun@kist.re.kr [High Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Moon, Jooho, E-mail: jmoon@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2017-08-01

    Graphical abstract: We successfully fabricated well-aligned slanted LiCoO{sub 2} nanowires as a one-dimensional nanostructured cathode by glancing angle deposition to enhance the electrochemical performance of all-solid-state thin film batteries. - Highlights: • Well-aligned slanted LiCoO{sub 2} nanowires are fabricated by glancing angle deposition. • One-dimensional nanostructured LiCoO{sub 2} cathode enlarges the contact area. • All-solid-state thin film battery exhibits enhances rate capability and cycling stability. - Abstract: We fabricated all-solid-state thin film batteries based on well-aligned slanted LiCoO{sub 2} nanowires by glancing angle deposition, as a facile template-free method in order to increase the electrochemically active site, i.e., the contact area between the solid electrolyte and the electrode. A highly porous thin film composed of well-separated slanted LiCoO{sub 2} nanowires not only facilitates the penetration of solid electrolyte phase into the cathode, but also alleviates the thermally and mechanically induced stresses during post-annealing and electrochemical cycling. The all-solid-state thin film battery based on the well-aligned slanted LiCoO{sub 2} nanowires, whose contact area between electrolyte and electrode was three times as high as that of a dense thin film, could provide additional migration pathways for lithium ion diffusion due to the enlarged reaction sites. This resulted in enhanced electrochemical kinetics, thereby leading to better rate capability and long-term cyclic stability as compared to the dense LiCoO{sub 2} thin film.

  4. Reversible solid oxide fuel cells (R-SOFCs) with chemically stable proton-conducting oxides

    KAUST Repository

    Bi, Lei

    2015-07-01

    Proton-conducting oxides offer a promising way of lowering the working temperature of solid oxide cells to the intermediate temperate range (500 to 700. °C) due to their better ionic conductivity. In addition, the application of proton-conducting oxides in both solid oxide fuel cells (SOFCs) and sold oxide electrolysis cells (SOECs) provides unique advantages compared with the use of conventional oxygen-ion conducting conductors, including the formation of water at the air electrode site. Since the discovery of proton conduction in some oxides about 30. years ago, the development of proton-conducting oxides in SOFCs and SOECs (the reverse mode of SOFCs) has gained increased attention. This paper briefly summarizes the development in the recent years of R-SOFCs with proton-conducting electrolytes, focusing on discussing the importance of adopting chemically stable materials in both fuel cell and electrolysis modes. The development of electrode materials for proton-conducting R-SOFCs is also discussed. © 2015 Elsevier B.V.

  5. Hybrid composite thin films composed of tin oxide nanoparticles and cellulose

    International Nuclear Information System (INIS)

    Mahadeva, Suresha K; Nayak, Jyoti; Kim, Jaehwan

    2013-01-01

    This paper reports the preparation and characterization of hybrid thin films consisting of tin oxide (SnO 2 ) nanoparticles and cellulose. SnO 2 nanoparticle loaded cellulose hybrid thin films were fabricated by a solution blending technique, using sodium dodecyl sulfate as a dispersion agent. Scanning and transmission electron microscopy studies revealed uniform dispersion of the SnO 2 nanoparticles in the cellulose matrix. Reduction in the crystalline melting transition temperature and tensile properties of cellulose was observed due to the SnO 2 nanoparticle loading. Potential application of these hybrid thin films as low cost, flexible and biodegradable humidity sensors is examined in terms of the change in electrical resistivity of the material exposed to a wide range of humidity as well as its response–recovery behavior. (paper)

  6. Decomposition of poly(amide-imide) film enameled on solid copper wire using atmospheric pressure non-equilibrium plasma.

    Science.gov (United States)

    Sugiyama, Kazuo; Suzuki, Katsunori; Kuwasima, Shusuke; Aoki, Yosuke; Yajima, Tatsuhiko

    2009-01-01

    The decomposition of a poly(amide-imide) thin film coated on a solid copper wire was attempted using atmospheric pressure non-equilibrium plasma. The plasma was produced by applying microwave power to an electrically conductive material in a gas mixture of argon, oxygen, and hydrogen. The poly(amide-imide) thin film was easily decomposed by argon-oxygen mixed gas plasma and an oxidized copper surface was obtained. The reduction of the oxidized surface with argon-hydrogen mixed gas plasma rapidly yielded a metallic copper surface. A continuous plasma heat-treatment process using a combination of both the argon-oxygen plasma and argon-hydrogen plasma was found to be suitable for the decomposition of the poly(amide-imide) thin film coated on the solid copper wire.

  7. Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

    Science.gov (United States)

    Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

    2014-11-01

    The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Decomposition of oxidezed lead and aluminium thin films on molybdenum substrates

    International Nuclear Information System (INIS)

    Makarovskij, N.A.

    1981-01-01

    The decomposition of oxidized solid phase lead and aluminium thin films on molybdenum substrates in the process of diffusion annealing in the 5x10 -5 mm Hg vacuum at temperatures from 280 to 320 deg C and from 500 to 560 deg C, respectively, is investigated. The conclusion is made that failure of oxidized lead and aluminium thin film coatings is carried out by the mechanism of volumetric self-diffusion. Experimentally established values of activation energies of the process of lead (Qsub(Mo)sup(Pb)=29 kcal/mol) and aluminium (Qsub(Mo)sup(Al)=35 kcal/mol) film failure are close to corresponding activation energies of lead and aluminium volumetric self-diffusion, which agrees with the conclusions made [ru

  9. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.; Giugni, Andrea; Di Fabrizio, Enzo M.; Pé rez-Murano, Francesc; Mescola, A.; Torre, Bruno

    2015-01-01

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip

  10. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    Energy Technology Data Exchange (ETDEWEB)

    Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

    2013-01-15

    Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

  11. Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

    2012-01-01

    Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

  12. Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching

    Energy Technology Data Exchange (ETDEWEB)

    Correa, Diogo S. [Universidade Federal de Pelotas (UFPel), RS (Brazil). Centro de Ciencias Quimicas, Farmaceuticas e de Alimentos; Pazinato, Julia C.O.; Freitas, Mauricio A. de; Radtke, Claudio; Garcia, Irene T.S., E-mail: irene@iq.ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil). Instituto de Quimica; Dorneles, Lucio S. [Universidade Federal de Santa Maria (UFSM), RS (Brazil). Centro de Ciencias Naturais e Exatas

    2014-05-15

    Tungsten oxides show different stoichiometries, crystal lattices and morphologies. These characteristics are important mainly when they are used as photocatalysts. In this work tungsten oxide thin films were obtained by thermal evaporation on (100) silicon substrates covered with gold and heated at 350 and 600 °C, with different deposition times. The stoichiometry of the films, morphology, crystal structure and resistance to leaching were characterized through X-ray photoelectron spectroscopy, micro-Raman spectroscopy, scanning and transmission electron microscopy, X-ray diffractometry, Rutherford backscattering spectrometry and O{sup 16} (α,α')O{sup 16} resonant nuclear reaction. Films obtained at higher temperatures show well-defined spherical nanometric structure; they are composed of WO{sub 3.1} and the presence of hydrated tungsten oxide was also observed. The major crystal structure observed is the hexagonal. Thin films obtained through thermal evaporation present resistance to leaching in aqueous media and excellent performance as photocatalysts, evaluated through the degradation of the methyl orange dye. (author)

  13. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  14. Electroluminescence of zinc oxide thin-films prepared via polymeric precursor and via sol-gel methods

    International Nuclear Information System (INIS)

    Lima, S.A.M.; Cremona, M.; Davolos, M.R.; Legnani, C.; Quirino, W.G.

    2007-01-01

    Zinc oxide (ZnO) is an electroluminescent (EL) material that can emit light in different regions of electromagnetic spectrum when electrically excited. Since ZnO is chemically stable, inexpensive and environmentally friendly material, its EL property can be useful to construct solid-state lamps for illumination or as UV emitter. We present here two wet chemical methods to prepare ZnO thin-films: the Pechini method and the sol-gel method, with both methods resulting in crystalline and transparent films with transmittance >85% at 550 nm. These films were used to make thin-film electroluminescent devices (TFELD) using two different insulator layers: lithium fluoride (LiF) or silica (SiO 2 ). All the devices exhibit at least two wide emission bands in the visible range centered at 420 nm and at 380 nm attributed to the electronic defects in the ZnO optical band gap. Besides these two bands, the device using SiO 2 and ZnO film obtained via sol-gel exhibits an additional band in the UV range centered at 350 nm which can be attributed to excitonic emission. These emission bands of ZnO can transfer their energy when a proper dopant is present. For the devices produced the voltage-current characteristics were measured in a specific range of applied voltage

  15. Interconnection of bundled solid oxide fuel cells

    Science.gov (United States)

    Brown, Michael; Bessette, II, Norman F; Litka, Anthony F; Schmidt, Douglas S

    2014-01-14

    A system and method for electrically interconnecting a plurality of fuel cells to provide dense packing of the fuel cells. Each one of the plurality of fuel cells has a plurality of discrete electrical connection points along an outer surface. Electrical connections are made directly between the discrete electrical connection points of adjacent fuel cells so that the fuel cells can be packed more densely. Fuel cells have at least one outer electrode and at least one discrete interconnection to an inner electrode, wherein the outer electrode is one of a cathode and and anode and wherein the inner electrode is the other of the cathode and the anode. In tubular solid oxide fuel cells the discrete electrical connection points are spaced along the length of the fuel cell.

  16. Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

    2013-09-02

    Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

  17. A simple visible light photo-assisted method for assembling and curing multilayer GO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pinheiro da Silva, Mauro Francisco, E-mail: mfps@usp.br [Escola Politécnica da Universidade de São Paulo, Departamento de Engenharia Metalúrgica e de Materiais, PMT-EPUSP e Departamento de Engenharia de Sistemas Eletrônicos, PSI-EPUSP, Av. Professor Mello Moraes, n° 2463, Cidade Universitária, CEP 05508-030, São Paulo, SP (Brazil); Pontifícia Universidade de São Paulo, Faculdade de Ciências Exatas e Tecnologia, Rua Marquês de Paranaguá, 111, CEP 01303-050, São Paulo, SP (Brazil); Oliveira, Débora Rose de [Instituto de Criminalística da Secretaria de Segurança do Estado de São Paulo, Núcleo de Química, Rua Moncorvo Filho, CEP 05507-060, São Paulo, SP (Brazil); Pontifícia Universidade de São Paulo, Faculdade de Ciências Exatas e Tecnologia, Rua Marquês de Paranaguá, 111, CEP 01303-050, São Paulo, SP (Brazil); and others

    2015-09-01

    A simple and efficient method for deposition of reduced graphene oxide (RGO) thin films onto arbitrary substrates is described. The present protocol consists in the application of radial compression to a thin layer of graphene oxide (GO) formed at the air–liquid interface of an ammoniacal dispersion of graphene oxide by continuous irradiation with visible light, that drives both the formation and curing of the film. Both infrared and near infrared luminescence spectroscopies were used for the proposition of a chemical mechanism in which the in situ singlet oxygen Δ{sup 1}O{sub 2}, generated by the photosensitization of molecular oxygen to visible light, initiates the formation and curing of the film. The GO and RGO films display Raman spectral signatures typical of graphene – based materials, with thickness of ca. 20 nm as evaluated by atomic force microscopy. The deposited films exhibited good transparency to visible light (max. 85%; 550 ± 2 nm), electrical resistivity equals to 14 ± 0.02 Ω m, sheet resistance equals to 5 kΩ sq{sup −1} with associated charge carrier mobility of 200 cm{sup 2}/V s. - Highlights: • Visible light photochemical assembly of self-supported graphene oxide thin films. • Graphene oxide photosensitizer for in situ production of singlet oxygen Δ{sup 1}O{sub 2}. • Δ{sup 1}O{sub 2}, as initiator of formation and curing of graphene oxide thin film. • Deposition of colloidal graphene oxide thin film by radial compression. • Deposition of graphene oxide thin film in arbitrary solid substrate.

  18. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    International Nuclear Information System (INIS)

    Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

  19. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  20. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

    2016-10-15

    Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

  1. Durability of solid oxide fuel cells using sulfur containing fuels

    DEFF Research Database (Denmark)

    Hagen, Anke; Rasmussen, Jens Foldager Bregnballe; Thydén, Karl Tor Sune

    2011-01-01

    The usability of hydrogen and also carbon containing fuels is one of the important advantages of solid oxide fuel cells (SOFCs), which opens the possibility to use fuels derived from conventional sources such as natural gas and from renewable sources such as biogas. Impurities like sulfur compounds...... are critical in this respect. State-of-the-art Ni/YSZ SOFC anodes suffer from being rather sensitive towards sulfur impurities. In the current study, anode supported SOFCs with Ni/YSZ or Ni/ScYSZ anodes were exposed to H2S in the ppm range both for short periods of 24h and for a few hundred hours. In a fuel...

  2. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  3. Solid Oxide Fuel Cell Systems PVL Line

    International Nuclear Information System (INIS)

    Shearer, Susan; Rush, Gregory

    2012-01-01

    In July 2010, Stark State College (SSC), received Grant DE-EE0003229 from the U.S. Department of Energy (DOE), Golden Field Office, for the development of the electrical and control systems, and mechanical commissioning of a unique 20kW scale high-pressure, high temperature, natural gas fueled Stack Block Test System (SBTS). SSC worked closely with subcontractor, Rolls-Royce Fuel Cell Systems (US) Inc. (RRFCS) over a 13 month period to successfully complete the project activities. This system will be utilized by RRFCS for pre-commercial technology development and training of SSC student interns. In the longer term, when RRFCS is producing commercial products, SSC will utilize the equipment for workforce training. In addition to DOE Hydrogen, Fuel Cells, and Infrastructure Technologies program funding, RRFCS internal funds, funds from the state of Ohio, and funding from the DOE Solid State Energy Conversion Alliance (SECA) program have been utilized to design, develop and commission this equipment. Construction of the SBTS (mechanical components) was performed under a Grant from the State of Ohio through Ohio's Third Frontier program (Grant TECH 08-053). This Ohio program supported development of a system that uses natural gas as a fuel. Funding was provided under the Department of Energy (DOE) Solid-state Energy Conversion Alliance (SECA) program for modifications required to test on coal synthesis gas. The subject DOE program provided funding for the electrical build, control system development and mechanical commissioning. Performance testing, which includes electrical commissioning, was subsequently performed under the DOE SECA program. Rolls-Royce Fuel Cell Systems is developing a megawatt-scale solid oxide fuel cell (SOFC) stationary power generation system. This system, based on RRFCS proprietary technology, is fueled with natural gas, and operates at elevated pressure. A critical success factor for development of the full scale system is the capability to

  4. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-01-01

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

  5. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-09-02

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

  6. Effects of concentration of reduced graphene oxide on properties of sol–gel prepared Al-doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Ching-Tian; Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Chen, Wei-Chun

    2016-04-30

    Reduced-graphene-oxide-incorporated aluminum-doped zinc oxide (AZO:rGO) composite thin films were synthesized on glass substrates by using the sol–gel method. The effect of the rGO concentration (0–3 wt%) on structural, electrical, and optical properties of the composite film was investigated by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, and ultraviolet–visible spectrometry. All of the composite films showed a typical hexagonal wurtzite structure, and the films incorporated with 1 wt% rGO showed the highest (0 0 2) peak intensity. The sheet resistance of the films was effectively reduced by a factor of more than two as the rGO ratio increased from 0 to 1 wt%. However, the sheet resistance increased with a further increase in the rGO ratio. The optical transmittance of the composite film monotonically decreased with increasing the rGO ratio from 0 to 3 wt%. The average optical transmittance (400–700 nm) of the AZO:rGO thin film within 1 wt% rGO was above 81%. - Highlights: • Reduced-graphene-oxide-doped ZnO:Al composite films are synthesized by sol–gel. • All AZO:rGO thin films show a typical hexagonal wurtzite structure. • Sheet resistance of AZO:rGO(1 wt%) film decreases by a factor of more than two. • The average visible transmittance of the AZO:rGO(1 wt%) film was 81%.

  7. Mathematical modeling of solid oxide fuel cells

    Science.gov (United States)

    Lu, Cheng-Yi; Maloney, Thomas M.

    1988-01-01

    Development of predictive techniques, with regard to cell behavior, under various operating conditions is needed to improve cell performance, increase energy density, reduce manufacturing cost, and to broaden utilization of various fuels. Such technology would be especially beneficial for the solid oxide fuel cells (SOFC) at it early demonstration stage. The development of computer models to calculate the temperature, CD, reactant distributions in the tubular and monolithic SOFCs. Results indicate that problems of nonuniform heat generation and fuel gas depletion in the tubular cell module, and of size limitions in the monolithic (MOD 0) design may be encountered during FC operation.

  8. Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

    Science.gov (United States)

    Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

    2018-04-01

    In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

  9. The influence of annealing on yttrium oxide thin film deposited by reactive magnetron sputtering: Process and microstructure

    Directory of Open Access Journals (Sweden)

    Y. Mao

    2017-01-01

    Full Text Available Yttrium oxide thin films were prepared by reactive magnetron sputtering in different deposition condition with various oxygen flow rates. The annealing influence on the yttrium oxide film microstructure is investigated. The oxygen flow shows a hysteresis behavior on the deposition rate. With a low oxygen flow rate, the so called metallic mode process with a high deposition rate (up to 1.4µm/h was achieved, while with a high oxygen flow rate, the process was considered to be in the poisoned mode with an extremely low deposition rate (around 20nm/h. X-ray diffraction (XRD results show that the yttrium oxide films that were produced in the metallic mode represent a mixture of different crystal structures including the metastable monoclinic phase and the stable cubic phase, while the poisoned mode products show a dominating monoclinic phase. The thin films prepared in metallic mode have relatively dense structures with less porosity. Annealing at 600 °C for 15h, as a structure stabilizing process, caused a phase transformation that changes the metastable monoclinic phase to stable cubic phase for both poisoned mode and metallic mode. The composition of yttrium oxide thin films changed from nonstoichiometric to stoichiometric together with a lattice parameter variation during annealing process. For the metallic mode deposition however, cracks were formed due to the thermal expansion coefficient difference between thin film and the substrate material which was not seen in poisoned mode deposition. The yttrium oxide thin films that deposited in different modes give various application options as a nuclear material.

  10. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

    Directory of Open Access Journals (Sweden)

    Imas Noviyana

    2017-06-01

    Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

  11. Performance of a polymer electrolyte membrane fuel cell with thin film catalyst electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Young Gab; Kim, Chang Soo; Peck, Dong Hyun; Shin, Dong Ryul [Korea Institute of Energy Research, Taejon (Korea, Republic of)

    1998-03-15

    In order to develop a kW-class polymer electrolyte membrane fuel cell (PEMFC), several electrodes have been fabricated by different catalyst layer preparation procedures and evaluated based on the cell performance. Conventional carbon paper and carbon cloth electrodes were fabricated using a ptfe-bonded Pt/C electrol catalyst by coating and rolling methods. Thin-film catalyst/ionomer composite layers were also formed on the membrane by direct coating and transfer printing techniques. The performance evaluation with catalyst layer preparation methods was carried out using a large or small electrode single cell. Conventional and thin film membrane and electrode assemblies (MEAs) with small electrode area showed a performance of 350 and 650 mA/cm{sup 2} at 0.6 V, respectively. The performance of direct coated thin film catalyst layer with 300 cm{sup 2} MEAs was higher than those of the conventional and transfer printing technique MEAs. The influence of some characteristic parameters of the thin film electrode on electrochemical performance was examined. Various other aspects of overall operation of PEMFC stacks were also discussed. (orig.)

  12. Effect of Co deposition on oxidation behavior and electrical properties of ferritic steel for solid oxide fuel cell interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Kruk, A.; Adamczyk, A.; Gil, A. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Krakow (Poland); Kąc, S. [AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, al. Mickiewicza 30, 30-059 Krakow (Poland); Dąbek, J.; Ziąbka, M. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Krakow (Poland); Brylewski, T., E-mail: brylew@agh.edu.pl [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059 Krakow (Poland)

    2015-09-01

    In this work, a Co layer deposited on DIN 50049 steel by means of pulsed laser deposition was applied for the protection of solid oxide fuel cell (SOFC) interconnects operating on the cathode side. The coated and uncoated steel samples were oxidized in air at 1073 K for 500 h, and their microstructures as well as electrical resistances were evaluated using X-ray diffraction, atomic force microscopy, scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy, and the 2-probe 4-point direct current method. It was demonstrated that the Co coating had reduced the oxidation rate of the steel by nearly a half. The area-specific resistance value of the coated steel was 5 × 10{sup −6} Ω·m{sup 2}, which was significantly lower than that of bare steel after 350 h of oxidation at 1073 K. Cr vaporization tests showed that the Co coating was efficient at blocking the outward diffusion of Cr. The obtained results prove that steel coated with a thin film of cobalt was suitable for use as metallic interconnect material in SOFCs operating at intermediate temperatures. - Highlights: • Co layer was deposited on ferritic steel by means of pulsed laser deposition. • Coated and bare ferritic steel samples were exposed to air at 1073 K for 500 h. • Scale growth rate on bare steel is higher than that on coated steel. • Electrical resistance for oxidized coated steel was lower than for bare steel. • Co-coated steel effectively reduced the formation of volatile Cr species.

  13. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  14. An initial applications study of ceria-gadolinia solid oxide fuel cells: V. 1

    Energy Technology Data Exchange (ETDEWEB)

    Bauen, A.; Hart, D.; Mould, B.

    1998-11-01

    Fuel cells are categorised by their electrolytes, and the solid oxide fuel cell is so called because its electrolyte consists of a solid ceramic oxide. Commonly this has been a form of zirconia, though other materials are now being considered for their different electrical properties. One of these, ceria doped with gadolinia, shows promise for use in lower temperature regimes than zirconia, and may open up different areas of a future market for consideration. This report considers the opportunities for ceria-gadolinia solid oxide fuel cell systems by comparing them with the application requirements in markets where fuel cells may have potential. The advantages and disadvantages of the technology are analysed, together with the state of the art in research and development. The direction in which research effort needs to move to address some of the issues is assessed. The report then draws conclusions regarding the potential of ceria-gadolinia in solid oxide fuel cell systems and in the energy markets as a whole. It should be noted that while this report is an applications study, some technology assessment has been included. Much of this is found in Volume 2. (author)

  15. Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

    2013-01-01

    We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

  16. Surface strontium enrichment on highly active perovskites for oxygen electrocatalysis in solid oxide fuel cells

    KAUST Repository

    Crumlin, Ethan J.; Mutoro, Eva; Liu, Zhi; Grass, Michael E.; Biegalski, Michael D.; Lee, Yueh-Lin; Morgan, Dane; Christen, Hans M.; Bluhm, Hendrik; Shao-Horn, Yang

    2012-01-01

    Perovskite oxides have high catalytic activities for oxygen electrocatalysis competitive to platinum at elevated temperatures. However, little is known about the oxide surface chemistry that influences the activity near ambient oxygen partial pressures, which hampers the design of highly active catalysts for many clean-energy technologies such as solid oxide fuel cells. Using in situ synchrotron-based, ambient pressure X-ray photoelectron spectroscopy to study the surface chemistry changes, we show that the coverage of surface secondary phases on a (001)-oriented La 0.8Sr 0.2CoO 3-δ (LSC) film becomes smaller than that on an LSC powder pellet at elevated temperatures. In addition, strontium (Sr) in the perovskite structure enriches towards the film surface in contrast to the pellet having no detectable changes with increasing temperature. We propose that the ability to reduce surface secondary phases and develop Sr-enriched perovskite surfaces of the LSC film contributes to its enhanced activity for O 2 electrocatalysis relative to LSC powder-based electrodes. © 2012 The Royal Society of Chemistry.

  17. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  18. Rare earth metals, rare earth hydrides, and rare earth oxides as thin films

    International Nuclear Information System (INIS)

    Gasgnier, M.

    1980-01-01

    The review deals with pure rare earth materials such as rare earth metals, rare earth hydrides, and rare earth oxides as thin films. Several preparation techniques, control methods, and nature of possible contaminations of thin films are described. These films can now be produced in an extremely well-known state concerning chemical composition, structure and texture. Structural, electric, magnetic, and optical properties of thin films are studied and discussed in comparison with the bulk state. The greatest contamination of metallic rare earth thin films is caused by reaction with hydrogen or with water vapour. The compound with an f.c.c. structure is the dihydride LnH 2 (Ln = lanthanides). The oxygen contamination takes place after annealing at higher temperatures. Then there appears a compound with a b.c.c. structure which is the C-type sesquioxide C-Ln 2 O 3 . At room atmosphere dihydride light rare earth thin films are converted to hydroxide Ln(OH) 3 . For heavy rare earth thin films the oxinitride LnNsub(x)Osub(y) is observed. The LnO-type compound was never seen. The present review tries to set the stage anew for the investigations to be undertaken in the future especially through the new generations of electron microscopes

  19. 3D nanoporous graphene films converted from liquid-crystalline holey graphene oxide for thin and high-performance supercapacitors

    Science.gov (United States)

    Wang, Bin; Liu, Jinzhang; Zhao, Yi; Zheng, Dezhi; Li, Yan; Sha, Jiangbo

    2018-01-01

    Holey graphene oxide (HGO) is prepared and its liquid crystal (LC) formation in water is investigated. The blade-coated LC-HGO hydrogel is hydrothermally reduced to form 3D nanoporous films used as supercapacitor electrodes. Holey graphene sheets are rumpled and interconnected to form a cellular structure with pore size around 100 nm during the reduction process. Reduced HGO films with different thicknesses are integrated into solid-state symmetric supercapacitors and their electrochemical performances are studied. High specific capacitance up to 304 F g-1 and high volumetric capacitance around 400 F cm-3 are achieved from our thin and flexible devices.

  20. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

    Science.gov (United States)

    Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

    2015-09-21

    : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  1. A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

    International Nuclear Information System (INIS)

    Santos, M.C.; Cogo, L.; Tanimoto, S.T.; Calegaro, M.L.; Bulhoes, L.O.S

    2006-01-01

    The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol -1 (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO 2 thin films was observed (440 ng cm -2 ) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO ads , demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature

  2. Co-sintering of CGO/NIO-CGO bilayers for solid oxide fuel cell

    International Nuclear Information System (INIS)

    Neto, P.P.B.; Grilo, J.P.F.; Souza, G.L.; Macedo, D.A.; Paskocimas, C.A.; Nascimento, R.M.

    2012-01-01

    Reducing the operating temperature of solid oxide fuel cells (SOFC) for the range between 500 and 700°C is one of the challenges which more has aroused the interest of research in SOFC in recent years. In this context, the bilayer anode/electrolyte composed of a porous support based on Ni-doped ceria (anode) and a ceria doped gadolinia (CGO) electrolyte, presents itself as one of the half-cell configurations of the most interest towards the production of electricity in the operating logic of a SOFC. In this work, CGO films were successfully prepared on NiO-CGO substrates using the resources of the screen-printing technique. The bi-layers were co-sintered between 1350 and 1450 ° C for 4 h and then characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy (EDS). The results showed good adhesion at the film/substrate interface and no cracks in the films. (author)

  3. Bilayered Oxide thin films for transparent electrode application

    Science.gov (United States)

    Dutta, Titas; Narayan, Jagdish

    2008-10-01

    Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

  4. Rapid, cool sintering of wet processed yttria-stabilized zirconia ceramic electrolyte thin films.

    Science.gov (United States)

    Park, Jun-Sik; Kim, Dug-Joong; Chung, Wan-Ho; Lim, Yonghyun; Kim, Hak-Sung; Kim, Young-Beom

    2017-09-29

    Here we report a photonic annealing process for yttria-stabilized zirconia films, which are one of the most well-known solid-state electrolytes for solid oxide fuel cells (SOFCs). Precursor films were coated using a wet-chemical method with a simple metal-organic precursor solution and directly annealed at standard pressure and temperature by two cycles of xenon flash lamp irradiation. The residual organics were almost completely decomposed in the first pre-annealing step, and the fluorite crystalline phases and good ionic conductivity were developed during the second annealing step. These films showed properties comparable to those of thermally annealed films. This process is much faster than conventional annealing processes (e.g. halogen furnaces); a few seconds compared to tens of hours, respectively. The significance of this work includes the treatment of solid-state electrolyte oxides for SOFCs and the demonstration of the feasibility of other oxide components for solid-state energy devices.

  5. Ultra-thin zirconia films on Zr-alloys

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Joong Il Jake; Mayr-Schmoelzer, Wernfried; Mittendorfer, Florian; Redinger, Josef; Diebold, Ulrike; Schmid, Michael [Institute of Applied Physics, Vienna University of Technology (Austria); Li, Hao; Rupprechter, Guenther [Institute of Materials Chemistry, Vienna University of Technology (Austria)

    2014-07-01

    Zirconia ultra-thin films have been prepared by oxidation of Pt{sub 3}Zr(0001) and showed a structure equivalent to (111) of cubic zirconia. Following previous work, we have prepared ultra-thin zirconia by oxidation of a different alloy, Pd{sub 3}Zr(0001), which resulted in a similar structure with a slightly different lattice parameter, 351.2 ±0.4 pm. Unlike the oxide on Pt{sub 3}Zr, where Zr of the oxide binds to Pt in the substrate, here the oxide binds to substrate Zr via oxygen. This causes stronger distortion of the oxide structure, i.e. a stronger buckling of Zr in the oxide. After additional oxidation of ZrO{sub 2}/Pt{sub 3}Zr, a different ultra-thin zirconia phase is observed. A preliminary structure model for this film is based on (113)-oriented cubic zirconia. 3D oxide clusters are also present after growing ultra-thin zirconia films. They occur at the step edges, and the density is higher on Pd{sub 3}Zr. These clusters also appear on terraces after additional oxidation. XPS reveals different core level shifts of the oxide films, bulk, and oxide clusters.

  6. Trends for Methane Oxidation at Solid Oxide Fuel Cell Conditions

    DEFF Research Database (Denmark)

    Kleis, Jesper; Jones, Glenn; Abild-Pedersen, Frank

    2009-01-01

    First-principles calculations are used to predict a plausible reaction pathway for the methane oxidation reaction. In turn, this pathway is used to obtain trends in methane oxidation activity at solid oxide fuel cell (SOFC) anode materials. Reaction energetics and barriers for the elementary...... the Ni surfaces to other metals of interest. This allows the reactivity over the different metals to be understood in terms of two reactivity descriptors, namely, the carbon and oxygen adsorption energies. By combining a simple free-energy analysis with microkinetic modeling, activity landscapes of anode...

  7. Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

    International Nuclear Information System (INIS)

    Nguyen, T.D.; Carl, D.A.; Hess, D.W.; Lieberman, M.A.; Gronsky, R.

    1991-04-01

    The feasibility of fabricating ultra-thin SiO 2 films on the order of a few nanometer thickness has been demonstrated. SiO 2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

  8. Transport mechanisms and wetting dynamics in molecularly thin films of long-chain alkanes at solid/vapour interface : relation to the solid-liquid phase transition

    OpenAIRE

    Lazar, Paul

    2005-01-01

    Wetting and phase transitions play a very important role our daily life. Molecularly thin films of long-chain alkanes at solid/vapour interfaces (e.g. C30H62 on silicon wafers) are very good model systems for studying the relation between wetting behaviour and (bulk) phase transitions. Immediately above the bulk melting temperature the alkanes wet partially the surface (drops). In this temperature range the substrate surface is covered with a molecularly thin ordered, solid-like alkane film (...

  9. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  10. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  11. Strength of Anode‐Supported Solid Oxide Fuel Cells

    DEFF Research Database (Denmark)

    Faes, A.; Frandsen, Henrik Lund; Kaiser, Andreas

    2011-01-01

    Nickel oxide and yttria doped zirconia composite strength is crucial for anode‐supported solid oxide fuel cells, especially during transient operation, but also for the initial stacking process, where cell curvature after sintering can cause problems. This work first compares tensile and ball....... Even though the electrolyte is to the tensile side, it is found that the anode support fails due to the thermo‐mechanical residual stresses....

  12. Nanostructured manganese oxide thin films as electrode material for supercapacitors

    Science.gov (United States)

    Xia, Hui; Lai, Man On; Lu, Li

    2011-01-01

    Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

  13. Thin solid films deposited by pulsed laser ablating spray

    International Nuclear Information System (INIS)

    Song Guangle

    2002-01-01

    The fabricating technique of thin solid films deposited by pulsed laser ablating spray is a new technique. The background from which it came into being and the process of its evolution were briefly described. According to relative documents, basic principle of the technique was dwelt on. Based on the latest documents, the status quo, including the studying abroad and home, was discussed in detail. The advantages, shortcomings, prospect of its utility, the significance of studying as well as critic problems were summarized. Some proposal was suggested

  14. Electrochemical Water Oxidation by a Catalyst-Modified Metal-Organic Framework Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Shaoyang; Pineda-Galvan, Yuliana; Maza, William A.; Epley, Charity C.; Zhu, Jie; Kessinger, Matthew C.; Pushkar, Yulia; Morris, Amanda J. (VP); (Purdue)

    2016-12-15

    Water oxidation, a key component in artificial photosynthesis, requires high overpotentials and exhibits slow reaction kinetics that necessitates the use of stable and efficient heterogeneous water-oxidation catalysts (WOCs). Here, we report the synthesis of UiO-67 metal–organic framework (MOF) thin films doped with [Ru(tpy)(dcbpy)OH2]2+ (tpy=2,2':6',2''-terpyridine, dcbpy=5,5'-dicarboxy-2,2'-bipyridine) on conducting surfaces and their propensity for electrochemical water oxidation. The electrocatalyst oxidized water with a turnover frequency (TOF) of (0.2±0.1) s-1 at 1.71 V versus the normal hydrogen electrode (NHE) in buffered solution (pH~7) and exhibited structural and electrochemical stability. The electroactive sites were distributed throughout the MOF thin film on the basis of scan-ratedependent voltammetry studies. This work demonstrates a promising way to immobilize large concentrations of electroactive WOCs into a highly robust MOF scaffold and paves the way for future photoelectrochemical water-splitting systems.

  15. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam - 530 045, A.P. (India); Rao, T. Subba, E-mail: thotasubbarao6@gmail.com [Department of Physics, Sri Krishnadevaraya University, Anantapuramu - 515 003, A.P. (India)

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  16. Comment on "Tunable Design of Structural Colors Produced by Pseudo-1D Photonic Crystals of Graphene Oxide" and Thin-Film Interference from Dried Graphene Oxide Film.

    Science.gov (United States)

    Hong, Seung-Ho; Song, Jang-Kun

    2017-04-01

    The mechanism of the iridescent color reflection from dried thin graphene oxide (GO) film on Si wafer is clarified. Dissimilarly to the photonic crystalline reflection in aqueous GO dispersion, the color reflection in dried GO film originates from the thin film interference. The peak reflection can reach 23% by optimizing the GO thickness and the substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. TiO 2 Thin Films Prepared via Adsorptive Self-Assembly for Self-Cleaning Applications

    KAUST Repository

    Xi, Baojuan

    2012-02-22

    Low-cost controllable solution-based processes for preparation of titanium oxide (TiO 2) thin films are highly desirable, because of many important applications of this oxide in catalytic decomposition of volatile organic compounds, advanced oxidation processes for wastewater and bactericidal treatments, self-cleaning window glass for green intelligent buildings, dye-sensitized solar cells, solid-state semiconductor metal-oxide solar cells, self-cleaning glass for photovoltaic devices, and general heterogeneous photocatalysis for fine chemicals etc. In this work, we develop a solution-based adsorptive self-assembly approach to fabricate anatase TiO 2 thin films on different glass substrates such as simple plane glass and patterned glass at variable compositions (normal soda lime glass or solar-grade borofloat glass). By tuning the number of process cycles (i.e., adsorption-then-heating) of TiO 2 colloidal suspension, we could facilely prepare large-area TiO 2 films at a desired thickness and with uniform crystallite morphology. Moreover, our as-prepared nanostructured TiO 2 thin films on glass substrates do not cause deterioration in optical transmission of glass; instead, they improve optical performance of commercial solar cells over a wide range of incident angles of light. Our as-prepared anatase TiO 2 thin films also display superhydrophilicity and excellent photocatalytic activity for self-cleaning application. For example, our investigation of photocatalytic degradation of methyl orange indicates that these thin films are indeed highly effective, in comparison to other commercial TiO 2 thin films under identical testing conditions. © 2012 American Chemical Society.

  18. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Dudney, Nancy J.

    2008-01-01

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  19. Thin-Film Material Science and Processing | Materials Science | NREL

    Science.gov (United States)

    Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

  20. Solid Oxide Fuel Cell Hybrid System for Distributed Power Generation

    Energy Technology Data Exchange (ETDEWEB)

    Faress Rahman; Nguyen Minh

    2004-01-04

    This report summarizes the work performed by Hybrid Power Generation Systems, LLC (HPGS) during the July 2003 to December 2003 reporting period under Cooperative Agreement DE-FC26-01NT40779 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Solid Oxide Fuel Cell Hybrid System for Distributed Power Generation''. The main objective of this project is to develop and demonstrate the feasibility of a highly efficient hybrid system integrating a planar Solid Oxide Fuel Cell (SOFC) and a micro-turbine. In addition, an activity included in this program focuses on the development of an integrated coal gasification fuel cell system concept based on planar SOFC technology. Also, another activity included in this program focuses on the development of SOFC scale up strategies.

  1. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  2. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

    Directory of Open Access Journals (Sweden)

    Nen-Wen Pu

    2015-09-01

    Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  3. Addressing fuel recycling in solid oxide fuel cell systems fed by alternative fuels

    DEFF Research Database (Denmark)

    Rokni, Masoud

    2017-01-01

    An innovative study on anode recirculation in solid oxide fuel cell systems with alternative fuels is carried out and investigated. Alternative fuels under study are ammonia, pure hydrogen, methanol, ethanol, DME and biogas from biomass gasification. It is shown that the amount of anode off......%. Furthermore, it is founded that for the case with methanol, ethanol and DME then at high utilization factors, low anode recirculation is recommended while at low utilization factors, high anode recirculation is recommended. If the plant is fed by biogas from biomass gasification then for each utilization...

  4. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Science.gov (United States)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  5. Morphology dependent dye-sensitized solar cell properties of nanocrystalline zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K., E-mail: sanjeevlrs732000@yahoo.co.in [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Inamdar, A.I.; Im, Hyunsik [Department of Semiconductor Science, Dongguk University, Seoul 100 715 (Korea, Republic of); Kim, B.G. [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India)

    2011-02-03

    Research highlights: > Nano-crystalline zinc oxide thin films were electrosynthesized from an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution onto FTO coated conducting glass substrates using two different electrochemical routes, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) or SDS (sodium dodecyl sulfate). > The reproducibility of the catalytic activity of the SDS and PVA surfactants in the modification of the morphologies was observed. > Vertically aligned nest-like and compact structures were observed from the SDS and PVA mediated films, respectively, while the grain size in the ZnO thin films without an organic surfactant was observed to be {approx}150 nm. > The dye sensitized ZnO electrodes displayed excellent properties in the conversion process from light to electricity. The efficiencies of the surfactant mediated nanocrystalline ZnO thin films, viz. ZnO:SDS and ZnO:PVA, sensitized with ruthenium-II (N3) dye were observed to be 0.49% and 0.27%, respectively. - Abstract: Nano-crystalline zinc oxide thin films were electrosynthesized with an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution on to FTO coated glass substrates. Two different electrochemical baths were used, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) and SDS (sodium dodecyl sulfate). The organic surfactants played an important role in modifying the surface morphology, which influenced the size of the crystallites and dye-sensitized solar cell (DSSC) properties. The vertically aligned thin and compact hexagonal crystallites were observed with SDS mediated films, while the grain size in the films without an organic surfactant was observed to be {approx}150 nm. The conversion efficiencies of the ZnO:SDS:Dye and ZnO:PVA:Dye thin films were observed to be 0.49% and 0.27%, respectively.

  6. Inkjet-printed p-type nickel oxide thin-film transistor

    Science.gov (United States)

    Hu, Hailong; Zhu, Jingguang; Chen, Maosheng; Guo, Tailiang; Li, Fushan

    2018-05-01

    High-performance inkjet-printed nickel oxide thin-film transistors (TFTs) with Al2O3 high-k dielectric have been fabricated using a sol-gel precursor ink. The "coffee ring" effect during the printing process was facilely restrained by modifying the viscosity of the ink to control the outward capillary flow. The impacts on the device performance was studied in detail in consideration of annealing temperature of the nickel oxide film and the properties of dielectric layer. The optimized switching ability of the device were achieved at an annealing temperature of 280 °C on a 50-nm-thick Al2O3 dielectric layer, with a hole mobility of 0.78 cm2/V·s, threshold voltage of -0.6 V and on/off current ratio of 5.3 × 104. The as-printed p-type oxide TFTs show potential application in low-cost, large-area complementary electronic devices.

  7. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  8. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  9. The effect of Mg dopants on magnetic and structural properties of iron oxide and zinc ferrite thin films

    Science.gov (United States)

    Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet

    2018-06-01

    Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.

  10. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    International Nuclear Information System (INIS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-01-01

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window

  11. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    Energy Technology Data Exchange (ETDEWEB)

    Ong, Hui-Yng [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Engineering, Nanyang Polytechnic, Singapore 569830 (Singapore); Shrestha, Milan; Lau, Gih-Keong, E-mail: mgklau@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  12. Performance evaluation of solid oxide fuel cells with thin film electrolyte fabricated by binder-assisted slurry casting

    Energy Technology Data Exchange (ETDEWEB)

    Guo, W.M.; Liu, X.M.; Li, L.J. [Department of Biological and Chemical Engineering, Guangxi University of Technology, Liuzhou 545006 (China); Xiao, Y.F. [Department of Stomatology, Liuzhou Maternity and Child Health Hospital, Liuzhou 545001 (China); Chen, Y. [School of Yingdong Life Science, Shaoguan University, Shaoguan 512005 (China)

    2011-10-15

    A gas-tight yttria-stabilized zirconia (YSZ) electrolyte film was fabricated on porous NiO-YSZ anode substrates by a binder-assisted slurry casting technique. The scanning electron microscope (SEM) results showed that the YSZ film was relatively dense with a thickness of 10 {mu}m. La{sub 0.8}Sr{sub 0.2}MnO{sub 3} (LSM)-YSZ was applied to cathode using a screen-print technique and the single fuel cells were tested in a temperature range from 600 to 800 C. An open circuit voltage (OCV) of over 1.0 V was observed. The maximum power densities at 600, 700, and 800 C were 0.13, 0.44, and 1.1 W cm{sup -2}, respectively. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    International Nuclear Information System (INIS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei Wei; Jin Chunming; Narayan, Roger J.

    2009-01-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices

  14. Role of temperature and energy density in the pulsed laser deposition of zirconium oxide thin film

    International Nuclear Information System (INIS)

    Mittra, Joy; Abraham, G.J.; Viswanadham, C.S.; Kulkarni, U.D.; Dey, G.K.

    2011-01-01

    Present work brings out the effects of energy density and substrate temperature on pulsed laser deposition of zirconium oxide thin film on Zr-base alloy substrates. The ablation of sintered zirconia has been carried out using a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source at 10 Hz repetition rate. To comprehend effects of these parameters on the synthesized thin film, pure zirconia substrate has been ablated at two different energy densities, 2 J.cm -2 and 5 J.cm -2 , keeping the substrate at 300 K, 573 K and 873 K, respectively. After visual observation, deposited thin films have been examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate and deteriorates further with the reduction in energy density of the incident laser. The oxide films, deposited at 573 K and 873 K, have been found to be adherent with the substrate and appear lustrous black. These indicate that the threshold for adherence of the zirconia film on the Zr-base alloy substrate lies in between 300 K and 573 K. Analysis of Raman spectra has indicated that thin films of zirconia, deposited using pulsed laser, on the Zr-base metallic substrate are initially in amorphous state. Experimental evidence has indicated a strong link among the degree of crystallinity of the deposited oxide film, the substrate temperature and the energy density. It also has shown that the crystallization of the oxide film is dependent on the substrate temperature and the duration of holding at high temperature. The O:Zr ratios of the films, analyzed from the XPS data, have been found to be close to but less than 2. This appears to explain the reason for the transformation of amorphous oxide into monoclinic and tetragonal phases, below 573 K, and not into cubic phase, which is reported to be more oxygen deficient. (author)

  15. Application of the monolithic solid oxide fuel cell to space power systems

    International Nuclear Information System (INIS)

    Myles, K.M.; Bhattacharyya, S.K.

    1991-01-01

    The monolithic solid-oxide fuel cell (MSOFC) is a promising electrochemical power generation device that is currently under development at Argonne National Laboratory. The extremely high power density of the MSOFC leads to MSOFC systems that have sufficiently high energy densities that they are excellent candidates for a number of space missions. The fuel cell can also be operated in reverse, if it can be coupled to an external power source, to regenerate the fuel and oxidant from the water product. This feature further enhances the potential mission applications of the MSOFC. In this paper, the current status of the fuel cell development is presented---the focus being on fabrication and currently achievable performance. In addition, a specific example of a space power system, featuring a liquid metal cooled fast spectrum nuclear reactor and a monolithic solid oxide fuel cell, is presented to demonstrate the features of an integrated system

  16. Application of the monolithic solid oxide fuel cell to space power systems

    Science.gov (United States)

    Myles, Kevin M.; Bhattacharyya, Samit K.

    1991-01-01

    The monolithic solid-oxide fuel cell (MSOFC) is a promising electrochemical power generation device that is currently under development at Argonne National Laboratory. The extremely high power density of the MSOFC leads to MSOFC systems that have sufficiently high energy densities that they are excellent candidates for a number of space missions. The fuel cell can also be operated in reverse, if it can be coupled to an external power source, to regenerate the fuel and oxidant from the water product. This feature further enhances the potential mission applications of the MSOFC. In this paper, the current status of the fuel cell development is presented—the focus being on fabrication and currently achievable performance. In addition, a specific example of a space power system, featuring a liquid metal cooled fast spectrum nuclear reactor and a monolithic solid oxide fuel cell, is presented to demonstrate the features of an integrated system.

  17. The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

    Science.gov (United States)

    Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

    2018-05-01

    Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

  18. Strategies for Lowering Solid Oxide Fuel Cells Operating Temperature

    Directory of Open Access Journals (Sweden)

    Albert Tarancón

    2009-11-01

    Full Text Available Lowering the operating temperature of solid oxide fuel cells (SOFCs to the intermediate range (500–700 ºC has become one of the main SOFC research goals. High operating temperatures put numerous requirements on materials selection and on secondary units, limiting the commercial development of SOFCs. The present review first focuses on the main effects of reducing the operating temperature in terms of materials stability, thermo-mechanical mismatch, thermal management and efficiency. After a brief survey of the state-of-the-art materials for SOFCs, attention is focused on emerging oxide-ionic conductors with high conductivity in the intermediate range of temperatures with an introductory section on materials technology for reducing the electrolyte thickness. Finally, recent advances in cathode materials based on layered mixed ionic-electronic conductors are highlighted because the decreasing temperature converts the cathode into the major source of electrical losses for the whole SOFC system. It is concluded that the introduction of alternative materials that would enable solid oxide fuel cells to operate in the intermediate range of temperatures would have a major impact on the commercialization of fuel cell technology.

  19. Thermal stability of pulsed laser deposited iridium oxide thin films at low oxygen atmosphere

    Science.gov (United States)

    Gong, Yansheng; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng

    2013-11-01

    Iridium oxide (IrO2) thin films have been regarded as a leading candidate for bottom electrode and diffusion barrier of ferroelectric capacitors, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the thermal stability of pulsed laser deposited IrO2 thin films at low oxygen atmosphere. Emphasis was given on the effect of post-deposition annealing temperature at different oxygen pressure (PO2) on the crystal structure, surface morphology, electrical resistivity, carrier concentration and mobility of IrO2 thin films. The results showed that the thermal stability of IrO2 thin films was strongly dependent on the oxygen pressure and annealing temperature. IrO2 thin films can stably exist below 923 K at PO2 = 1 Pa, which had a higher stability than the previous reported results. The surface morphology of IrO2 thin films depended on PO2 and annealing temperature, showing a flat and uniform surface for the annealed films. Electrical properties were found to be sensitive to both the annealing temperature and oxygen pressure. The room-temperature resistivity of IrO2 thin films with a value of 49-58 μΩ cm increased with annealing temperature at PO2 = 1 Pa. The thermal stability of IrO2 thin films as a function of oxygen pressure and annealing temperature was almost consistent with thermodynamic calculation.

  20. Synthesis and characterization of Yttria-stabilized zirconia (YSZ) thin films using spray pyrolysis technique

    International Nuclear Information System (INIS)

    Jamale, A.P.; Chourasiya, M.G.; Chavan, A.U.; Patil, S.P.; Jadhav, L.D.

    2009-01-01

    Micro solid oxide fuel cells (SOFC) are of great potential, which require components in film form. We are reporting the spray pyrolysis of 8YSZ films as solid electrolyte for micro-SOFC. The process parameters of the technique were optimized to get stoichiometric films of YSZ. The micro-structural and electrical properties of the films were studied. The elemental analysis of the film showed the desired composition in the film. The conductivity of the film was 0.05 S/cm at 500 deg C with activation energy of 0.90eV. (author)

  1. Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Hoon [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); Kim, Young Heon, E-mail: young.h.kim@kriss.re.kr [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ahn, Sang Jung [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ha, Tae Hwan [University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Future Biotechnology Research Division, Korea Research Institute of Bioscience and Biotechnology (KRIBB), 125 Gwahak-ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Kim, Hong Seung [Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, 727 Taejong-Ro, Busan 606-791 (Korea, Republic of)

    2015-09-15

    Highlights: • Nanometer-sized small grains were observed in the ITO thin films. • The grain size increased as the post-thermal annealing temperature increased. • The mobility of ITO thin films increased with increasing grain size. • The ITO film annealed at 300 °C was an amorphous phase, while the others were polycrystalline structure. - Abstract: In this paper, we demonstrate the electrical properties, depending on grain size, of nanocrystalline indium tin oxide (ITO) thin films prepared with a solution process. The size distributions of nanometer-sized ITO film grains increased as the post-annealing temperature increased after deposition; the grain sizes were comparable with the calculated electron mean free path. The mobility of ITO thin films increased with increasing grain size; this phenomenon was explained by adopting the charge-trapping model for grain boundary scattering. These findings suggest that it is possible to improve mobility by reducing the number of trapping sites at the grain boundary.

  2. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  3. Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

    International Nuclear Information System (INIS)

    Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

    2003-01-01

    Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

  4. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  5. Role of plasma activation in tailoring the nanostructure of multifunctional oxides thin films

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M.; Losurdo, Maria; Capezzuto, Pio [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy)], E-mail: giovanni.bruno@ba.imip.cnr.it

    2009-03-01

    Potential of O{sub 2} remote plasmas for improving structural, morphological and optical properties of various multifunctional oxides thin films both during plasma assisted growth as well as by post-growth treatments is discussed. In particular, an O{sub 2} remote plasma metalorganic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological and optical properties of Er{sub 2}O{sub 3} and ZnO films. Furthermore, post-growth room-temperature remote O{sub 2} plasma treatments of indium-tin-oxides (ITO) films are demonstrated to be effective in improving morphology of ITO films.

  6. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  7. Textured indium tin oxide thin films by chemical solution deposition and rapid thermal processing

    International Nuclear Information System (INIS)

    Mottern, Matthew L.; Tyholdt, Frode; Ulyashin, Alexander; Helvoort, Antonius T.J. van; Verweij, Henk; Bredesen, Rune

    2007-01-01

    The microstructure of state-of-the-art chemical solution deposited indium tin oxide thin films typically consists of small randomly oriented grains, high porosity and poor homogeneity. The present study demonstrates how the thin film microstructure can be improved significantly by tailoring the precursor solutions and deposition conditions to be kinetically and thermodynamically favorable for generation of homogeneous textured thin films. This is explained by the occurrence of a single heterogeneous nucleation mechanism. The as-deposited thin films, crystallized at 800 deg. C, have a high apparent density, based on a refractive index of ∼ 1.98 determined by single wavelength ellipsometry at 633 nm. The microstructure of the films consists of columnar grains with preferred orientation as determined by X-ray diffraction and transmission electron microscopy. The resistivity, measured by the four point probe method, is ∼ 2 x 10 -3 Ω cm prior to post-deposition treatments

  8. SOLID OXIDE FUEL CELL HYBRID SYSTEM FOR DISTRIBUTED POWER GENERATION

    Energy Technology Data Exchange (ETDEWEB)

    Faress Rahman; Nguyen Minh

    2003-07-01

    This report summarizes the work performed by Hybrid Power Generation Systems, LLC during the January 2003 to June 2003 reporting period under Cooperative Agreement DE-FC26-01NT40779 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Solid Oxide Fuel Cell Hybrid System for Distributed Power Generation''. The main objective of this project is to develop and demonstrate the feasibility of a highly efficient hybrid system integrating a planar Solid Oxide Fuel Cell (SOFC) and a micro-turbine. In addition, an activity included in this program focuses on the development of an integrated coal gasification fuel cell system concept based on planar SOFC technology. This report summarizes the results obtained to date on: System performance analysis and model optimization; Reliability and cost model development; System control including dynamic model development; Heat exchanger material tests and life analysis; Pressurized SOFC evaluation; and Pre-baseline system definition for coal gasification fuel cell system concept.

  9. Temperature Dependence of the Seebeck Coefficient in Zinc Oxide Thin Films

    Science.gov (United States)

    Noori, Amirreza; Masoumi, Saeed; Hashemi, Najmeh

    2017-12-01

    Thermoelectric devices are reliable tools for converting waste heat into electricity as they last long, produce no noise or vibration, have no moving elements, and their light weight makes them suitable for the outer space usage. Materials with high thermoelectric figure of merit (zT) have the most important role in the fabrication of efficient thermoelectric devices. Metal oxide semiconductors, specially zinc oxide has recently received attention as a material suitable for sensor, optoelectronic and thermoelectric device applications because of their wide direct bandgap, chemical stability, high-energy radiation endurance, transparency and acceptable zT. Understanding the thermoelectric properties of the undoped ZnO thin films can help design better ZnO-based devices. Here, we report the results of our experimental work on the thermoelectric properties of the undoped polycrystalline ZnO thin films. These films are deposited on alumina substrates by thermal evaporation of zinc in vacuum followed by a controlled oxidation process in air carried out at the 350-500 °C temperature range. The experimental setup including gradient heaters, thermometry system and Seebeck voltage measurement equipment for high resistance samples is described. Seebeck voltage and electrical resistivity of the samples are measured at different conditions. The observed temperature dependence of the Seebeck coefficient is discussed.

  10. The growth and evolution of thin oxide films on delta-plutonium surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Flores, Harry G [Los Alamos National Laboratory; Pugmire, David L [Los Alamos National Laboratory

    2009-01-01

    The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

  11. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  12. Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

    Science.gov (United States)

    Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

    2012-09-01

    In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

  13. Indium oxide thin film based ammonia gas and ethanol vapour sensor

    Indian Academy of Sciences (India)

    Unknown

    acetone and dried under an electric lamp (100 W). Thin films of indium oxide ... A λ-19, UV–VIS Spectrophotometer (Perkin Elmer, USA) was used for measuring .... tion of ammonia is observed through glowing of LED. LM3914, LED driver is ...

  14. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  15. Strontium Titanate-based Composite Anodes for Solid Oxide Fuel Cells

    DEFF Research Database (Denmark)

    Blennow Tullmar, Peter; Kammer Hansen, Kent; Wallenberg, L.R.

    2008-01-01

    Surfactant-assisted infiltration of Gd-doped ceria (CGO) in Nb-doped SrTiO3 (STN) was investigated as a potential fuel electrode for solid oxide fuel cells (SOFC). An electronically conductive backbone structure of STN was first fabricated at high temperatures and then combined with the mixed con...

  16. Computer Simulations of Composite Electrodes in Solid-Oxide Fuel-Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sunde, Svein

    1999-07-01

    Fuel cells are devices for converting the combined chemical (free) energy of fuels and oxygen (air) directly to electrical energy without relying on the dynamic action of steam heated by reacting fuel-oxygen mixtures, like in steam turbines, or of the reacting gas mixtures themselves, like in gas turbines. The basic rationale for fuel cells is their high efficiencies as compared to indirect-conversion methods. Fuel cells are currently being considered for a number of applications, among them de-centralised power supply. Fuel cells come in five basic types and are usually classified according to the type of electrolyte used, which in turn to a significant degree limits the options for anode and cathode materials. The solid-oxide fuel-cell (SOFC) , with which this thesis is concerned, is thus named after its oxide electrolyte, typically the oxide-ion conducting material yttria-stabilised zirconia (YSZ). While the cathode of an SOFC is often uniform in chemical composition (or at least intended to be), various problems of delamination, cracking etc. associated with the use of metallic anode electrocatalysts led to the development of composite SOFC anodes. Porous anodes consisting of Ni and YSZ particles in roughly 50/50 wt-% mixtures are now almost standard with any SOFC-development programme. The designer of composite SOFC electrodes is faced with at least three, interrelated questions: (1) What will be the optimum microstructure and composition of the composite electrode? (2) If the structure changes during operation, as is often observed, what will be the consequences for the internal losses in the cell? (3) How do we interpret electrochemical and conductivity measurements with regard to structure and composition? It is the primary purpose of this thesis to provide a framework for modelling the electrochemical and transport properties of composite electrodes for SOFC, and to arrive at some new insights that cannot be offered by experiment alone. Emphasis is put on

  17. Chemical vapour deposition of vanadium oxide thermochromic thin films

    Science.gov (United States)

    Piccirillo, Clara

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

  18. Analysis of Gas Leakage and Current Loss of Solid Oxide Fuel Cells by Screen Printing

    DEFF Research Database (Denmark)

    Jia, Chuan; Han, Minfang; Chen, Ming

    2017-01-01

    Two types of anode supported solid oxide fuel cell (SOFC) NiO-YSZ/YSZ/GDC/LSCF with the same structure and different manufacturing process were tested. Gas leakage was suspected for cells manufactured with screen printing technique. Effective leak current densities for both types of cells were...... calculated. Their performances of electrochemical impedance spectroscopy (EIS) were compared and distribution function of relaxation times (DRT) technique was also used to find the clue of gas leakage. Finally, thinning and penetrating holes were observed in electrolyte layer, which confirmed the occurrence...

  19. Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xue Zhang

    2017-07-01

    Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

  20. Modeling of thermal expansion coefficient of perovskite oxide for solid oxide fuel cell cathode

    Science.gov (United States)

    Heydari, F.; Maghsoudipour, A.; Alizadeh, M.; Khakpour, Z.; Javaheri, M.

    2015-09-01

    Artificial intelligence models have the capacity to eliminate the need for expensive experimental investigation in various areas of manufacturing processes, including the material science. This study investigates the applicability of adaptive neuro-fuzzy inference system (ANFIS) approach for modeling the performance parameters of thermal expansion coefficient (TEC) of perovskite oxide for solid oxide fuel cell cathode. Oxides (Ln = La, Nd, Sm and M = Fe, Ni, Mn) have been prepared and characterized to study the influence of the different cations on TEC. Experimental results have shown TEC decreases favorably with substitution of Nd3+ and Mn3+ ions in the lattice. Structural parameters of compounds have been determined by X-ray diffraction, and field emission scanning electron microscopy has been used for the morphological study. Comparison results indicated that the ANFIS technique could be employed successfully in modeling thermal expansion coefficient of perovskite oxide for solid oxide fuel cell cathode, and considerable savings in terms of cost and time could be obtained by using ANFIS technique.

  1. Remote plasma deposition of textured zinc oxide with focus on thin film solar cell applications : material properties, plasma processes and film growth

    NARCIS (Netherlands)

    Groenen, R.

    2005-01-01

    Simultaneously possessing transparency in the visible region, close to that of insulators, and electrical conductivity, close to that of metals, transparent conducting oxide (TCO) thin films form a highly attractive class of materials for a wide variety of applications like thin film solar cells,

  2. Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

    International Nuclear Information System (INIS)

    Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

    2012-01-01

    The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In 2 O 3 . The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10 −6 cm 2V−1s−1 , the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

  3. Future Power Production by LENR with Thin-Film Electrodes

    Science.gov (United States)

    Miley, George H.; Hora, Heinz; Lipson, Andrei; Luo, Nie; Shrestha, P. Joshi

    2007-03-01

    PdD cluster reaction theory was recently proposed to explain a wide range of Low energy Nuclear Reaction (LENR) experiments. If understood and optimized, cluster reactions could lead to a revolutionary new power source of nuclear energy. The route is two-fold. First, the excess heat must be obtained reproducibly and over extended run times. Second, the percentage of excess must be significantly (order of magnitude or more) higher than the 20-50% typically today. The thin film methods described here have proven to be quite reproducible, e.g. providing excess heat of 20-30% in nine consecutive runs of several weeks each. However, mechanical separation of the films occurs over long runs due to the severe mechanical stresses created.. Techniques to overcome these problems are possible using graded bonding techniques similar to that used in high temperature solid oxide fuel cells. Thus the remaining key issue is to increase the excess heat. The cluster model provides import insight into this. G. H. Miley, H. Hora, et al., 233rd Amer Chem Soc Meeting, Chicago, IL, March 25-29, 2007.

  4. Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

    2008-07-01

    Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

  5. SOLID STATE ENERGY CONVERSION ALLIANCE DELPHI SOLID OXIDE FUEL CELL

    Energy Technology Data Exchange (ETDEWEB)

    Steven Shaffer; Sean Kelly; Subhasish Mukerjee; David Schumann; Gail Geiger; Kevin Keegan; Larry Chick

    2004-05-07

    The objective of this project is to develop a 5 kW Solid Oxide Fuel Cell power system for a range of fuels and applications. During Phase I, the following will be accomplished: Develop and demonstrate technology transfer efforts on a 5 kW stationary distributed power generation system that incorporates steam reforming of natural gas with the option of piped-in water (Demonstration System A). Initiate development of a 5 kW system for later mass-market automotive auxiliary power unit application, which will incorporate Catalytic Partial Oxidation (CPO) reforming of gasoline, with anode exhaust gas injected into an ultra-lean burn internal combustion engine. This technical progress report covers work performed by Delphi from July 1, 2003 to December 31, 2003, under Department of Energy Cooperative Agreement DE-FC-02NT41246. This report highlights technical results of the work performed under the following tasks: Task 1 System Design and Integration; Task 2 Solid Oxide Fuel Cell Stack Developments; Task 3 Reformer Developments; Task 4 Development of Balance of Plant (BOP) Components; Task 5 Manufacturing Development (Privately Funded); Task 6 System Fabrication; Task 7 System Testing; Task 8 Program Management; Task 9 Stack Testing with Coal-Based Reformate; and Task 10 Technology Transfer from SECA CORE Technology Program. In this reporting period, unless otherwise noted Task 6--System Fabrication and Task 7--System Testing will be reported within Task 1 System Design and Integration. Task 8--Program Management, Task 9--Stack Testing with Coal Based Reformate, and Task 10--Technology Transfer from SECA CORE Technology Program will be reported on in the Executive Summary section of this report.

  6. Stabilizing nanostructured solid oxide fuel cell cathode with atomic layer deposition.

    Science.gov (United States)

    Gong, Yunhui; Palacio, Diego; Song, Xueyan; Patel, Rajankumar L; Liang, Xinhua; Zhao, Xuan; Goodenough, John B; Huang, Kevin

    2013-09-11

    We demonstrate that the highly active but unstable nanostructured intermediate-temperature solid oxide fuel cell cathode, La0.6Sr0.4CoO3-δ (LSCo), can retain its high oxygen reduction reaction (ORR) activity with exceptional stability for 4000 h at 700 °C by overcoating its surfaces with a conformal layer of nanoscale ZrO2 films through atomic layer deposition (ALD). The benefits from the presence of the nanoscale ALD-ZrO2 overcoats are remarkable: a factor of 19 and 18 reduction in polarization area-specific resistance and degradation rate over the pristine sample, respectively. The unique multifunctionality of the ALD-derived nanoscaled ZrO2 overcoats, that is, possessing porosity for O2 access to LSCo, conducting both electrons and oxide-ions, confining thermal growth of LSCo nanoparticles, and suppressing surface Sr-segregation is deemed the key enabler for the observed stable and active nanostructured cathode.

  7. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  8. Deposition of indium tin oxide thin films by cathodic arc ion plating

    International Nuclear Information System (INIS)

    Yang, M.-H.; Wen, J.-C.; Chen, K.-L.; Chen, S.-Y.; Leu, M.-S.

    2005-01-01

    Indium tin oxide (ITO) thin films have been deposited by cathodic arc ion plating (CAIP) using sintered oxide target as the source material. In an oxygen atmosphere of 200 deg. C, ITO films with a lowest resistivity of 2.2x10 -4 Ω-cm were obtained at a deposition rate higher than 450 nm/min. The carrier mobility of ITO shows a maximum at some medium pressures. Although morphologically ITO films with a very fine nanometer-sized structure were observed to possess the lowest resistivity, more detailed analyses based on X-ray diffraction are attempted to gain more insight into the factors that govern electron mobility in this investigation

  9. A Solid-State Thin-Film Ag/AgCl Reference Electrode Coated with Graphene Oxide and Its Use in a pH Sensor

    Directory of Open Access Journals (Sweden)

    Tae Yong Kim

    2015-03-01

    Full Text Available In this study, we describe a novel solid-state thin-film Ag/AgCl reference electrode (SSRE that was coated with a protective layer of graphene oxide (GO. This layer was prepared by drop casting a solution of GO on the Ag/AgCl thin film. The potential differences exhibited by the SSRE were less than 2 mV for 26 days. The cyclic voltammograms of the SSRE were almost similar to those of a commercial reference electrode, while the diffusion coefficient of Fe(CN63− as calculated from the cathodic peaks of the SSRE was 6.48 × 10−6 cm2/s. The SSRE was used in conjunction with a laboratory-made working electrode to determine its suitability for practical use. The average pH sensitivity of this combined sensor was 58.5 mV/pH in the acid-to-base direction; the correlation coefficient was greater than 0.99. In addition, an integrated pH sensor that included the SSRE was packaged in a secure digital (SD card and tested. The average sensitivity of the chip was 56.8 mV/pH, with the correlation coefficient being greater than 0.99. In addition, a pH sensing test was also performed by using a laboratory-made potentiometer, which showed a sensitivity of 55.4 mV/pH, with the correlation coefficient being greater than 0.99.

  10. A solid-state thin-film Ag/AgCl reference electrode coated with graphene oxide and its use in a pH sensor.

    Science.gov (United States)

    Kim, Tae Yong; Hong, Sung A; Yang, Sung

    2015-03-17

    In this study, we describe a novel solid-state thin-film Ag/AgCl reference electrode (SSRE) that was coated with a protective layer of graphene oxide (GO). This layer was prepared by drop casting a solution of GO on the Ag/AgCl thin film. The potential differences exhibited by the SSRE were less than 2 mV for 26 days. The cyclic voltammograms of the SSRE were almost similar to those of a commercial reference electrode, while the diffusion coefficient of Fe(CN)63- as calculated from the cathodic peaks of the SSRE was 6.48 × 10-6 cm2/s. The SSRE was used in conjunction with a laboratory-made working electrode to determine its suitability for practical use. The average pH sensitivity of this combined sensor was 58.5 mV/pH in the acid-to-base direction; the correlation coefficient was greater than 0.99. In addition, an integrated pH sensor that included the SSRE was packaged in a secure digital (SD) card and tested. The average sensitivity of the chip was 56.8 mV/pH, with the correlation coefficient being greater than 0.99. In addition, a pH sensing test was also performed by using a laboratory-made potentiometer, which showed a sensitivity of 55.4 mV/pH, with the correlation coefficient being greater than 0.99.

  11. Study of Interfacial Interactions Using Thin Film Surface Modification: Radiation and Oxidation Effects in Materials

    International Nuclear Information System (INIS)

    2014-01-01

    Interfaces play a key role in dictating the long-term stability of materials under the influence of radiation and high temperatures. For example, grain boundaries affect corrosion by way of providing kinetically favorable paths for elemental diffusion, but they can also act as sinks for defects and helium generated during irradiation. Likewise, the retention of high-temperature strength in nanostructured, oxide-dispersion strengthened steels depends strongly on the stoichiometric and physical stability of the (Y, Ti)-oxide particles/matrix interface under radiation and high temperatures. An understanding of these interfacial effects at a fundamental level is important for the development of materials for extreme environments of nuclear reactors. The goal of this project is to develop an understanding stability of interfaces by depositing thin films of materials on substrates followed by ion irradiation of the film-substrate system at elevated temperatures followed by post-irradiation oxidation treatments. Specifically, the research will be performed by depositing thin films of yttrium and titanium (~500 nm) on Fe-12%Cr binary alloy substrate. Y and Ti have been selected as thin-film materials because they form highly stable protective oxides layers. The Fe-12%Cr binary alloy has been selected because it is representative of ferritic steels that are widely used in nuclear systems. The absence of other alloying elements in this binary alloy would allow for a clearer examination of structures and compositions that evolve during high-temperature irradiations and oxidation treatments. The research is divided into four specific tasks: (1) sputter deposition of 500 nm thick films of Y and Ti on Fe-12%Cr alloy substrates, (2) ion irradiation of the film-substrate system with 2MeV protons to a dose of 2 dpa at temperatures of 300°C, 500°C, and 700°C, (3) oxidation of as-deposited and ion-irradiated samples in a controlled oxygen environment at 500°C and 700°C, (4

  12. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

  13. Photoluminescence properties of perovskite multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

    2016-07-01

    Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

  14. Cuprous oxide thin films prepared by thermal oxidation of copper layer. Morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Karapetyan, Artak, E-mail: karapetyan@cinam.univ-mrs.fr [Aix Marseille Université, CINaM, 13288, Marseille (France); Institute for Physical Research of NAS of Armenia, Ashtarak-2 0203 (Armenia); Reymers, Anna [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Giorgio, Suzanne; Fauquet, Carole [Aix Marseille Université, CINaM, 13288, Marseille (France); Sajti, Laszlo [Laser Zentrum Hannover e.V. Hollerithallee 8, 30419 Hannover (Germany); Nitsche, Serge [Aix Marseille Université, CINaM, 13288, Marseille (France); Nersesyan, Manuk; Gevorgyan, Vladimir [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Marine, Wladimir [Aix Marseille Université, CINaM, 13288, Marseille (France)

    2015-03-15

    Structural and optical characterization of crystalline Cu{sub 2}O thin films obtained by thermal oxidation of Cu films at two different temperatures 800 °C and 900 °C are investigated in this work. X-ray diffraction measurements indicate that synthesized films consist of single Cu{sub 2}O phase without any interstitial phase and show a nano-grain structure. Scanning Electron Microscopy observations indicate that the Cu{sub 2}O films have a micro-scale roughness whereas High Resolution Transmission Electron Microscopy highlights that the nanocrystalline structure is formed by superposition of nearly spherical nanocrystals smaller than 30 nm. Photoluminescence spectra of these films exhibit at room temperature two well-resolved emission peaks at 1.34 eV due to defects energy levels and at 1.97 eV due to phonon-assisted recombination of the 1s orthoexciton in both film series. Emission characteristics depending on the laser power is deeply investigated to determine the origin of recorded emissions. Time-integrated spectra of the 1s orthoexciton emission reveals the presence of oxygen defects below the conduction band edge under non-resonant two-photon excitation using a wide range of excitations wavelengths. Optical absorption coefficients at room temperature are obtained from an accurate analysis of their transmission and reflection spectra, whereas the optical band gap energy is estimated at about 2.11 eV. Results obtained are of high relevance especially for potential applications in semiconductor devices such as solar cells, optical sources and detectors. - Highlights: • Nanostructured Cu{sub 2}O thin films were synthesized by thermal oxidation of Cu films. • The PL spectra of nanostructured thin films revealed two well-resolved emission peaks. • The PL properties were investigated under a broad range of experimental conditions. • Inter-band transition in the infrared range has been associated to V{sub Cu} and V{sub O} vacancies. • Absorption

  15. Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arti Arora

    2010-06-01

    Full Text Available Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 % characteristics required for MEMS based acoustic devices.

  16. Combinatorial study of zinc tin oxide thin-film transistors

    Science.gov (United States)

    McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

    2008-01-01

    Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

  17. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

    2013-01-01

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

  18. Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

    Energy Technology Data Exchange (ETDEWEB)

    Guimond, Sebastien

    2009-06-04

    The growth and the surface structure of well-ordered V{sub 2}O{sub 3}, V{sub 2}O{sub 5} and MoO{sub 3} thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V{sub 2}O{sub 3}(0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V{sub 2}O{sub 3} bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V{sub 2}O{sub 5}(001) and MoO{sub 3}(010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O{sub 2} in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V{sub 2}O{sub 5} and MoO{sub 3} layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a

  19. Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

    International Nuclear Information System (INIS)

    Guimond, Sebastien

    2009-01-01

    The growth and the surface structure of well-ordered V 2 O 3 , V 2 O 5 and MoO 3 thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V 2 O 3 (0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V 2 O 3 bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V 2 O 5 (001) and MoO 3 (010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O 2 in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V 2 O 5 and MoO 3 layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a monolayer is formed dur-ing the preparation of supported vanadia

  20. Metal Oxides Doped PPY-PVA Blend Thin Films Based Gas Sensor

    Directory of Open Access Journals (Sweden)

    D. B. DUPARE

    2009-02-01

    Full Text Available Synthesis of metal oxides doped polypyrrole–polyvinyl alcohol blend thin films by in situ chemical oxidative polymerization, using microwave oven on glass substrate for development of Ammonia and Trimethyl ammine hazardous gas sensor. The all experimental process carried out at room temperature(304 K. These polymer materials were characterized by Chemical analyses, spectral studies (UV-visible and IR and conductivity measurement by four –probe technique. The surface morphology as observed in the SEM image was observed to be uniformly covering the entire substrate surface. The sensor was used for different concentration (ppm of TMA and Ammonia gas investigation at room temperature (304 k. This study found to possess improved electrical, mechanical and environmental stability metal oxides doped PPY-PVA films.

  1. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  2. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    International Nuclear Information System (INIS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  3. Controllable Electrochemical Synthesis of Reduced Graphene Oxide Thin-Film Constructed as Efficient Photoanode in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Soon Weng Chong

    2016-01-01

    Full Text Available A controllable electrochemical synthesis to convert reduced graphene oxide (rGO from graphite flakes was introduced and investigated in detail. Electrochemical reduction was used to prepare rGO because of its cost effectiveness, environmental friendliness, and ability to produce rGO thin films in industrial scale. This study aimed to determine the optimum applied potential for the electrochemical reduction. An applied voltage of 15 V successfully formed a uniformly coated rGO thin film, which significantly promoted effective electron transfer within dye-sensitized solar cells (DSSCs. Thus, DSSC performance improved. However, rGO thin films formed in voltages below or exceeding 15 V resulted in poor DSSC performance. This behavior was due to poor electron transfer within the rGO thin films caused by poor uniformity. These results revealed that DSSC constructed using 15 V rGO thin film exhibited high efficiency (η = 1.5211% attributed to its higher surface uniformity than other samples. The addition of natural lemon juice (pH ~ 2.3 to the electrolyte accelerated the deposition and strengthened the adhesion of rGO thin film onto fluorine-doped tin oxide (FTO glasses.

  4. Stress relaxation of La1/2Sr1/2MnO3 and La2/3Ca1/3MnO3 at solid oxide fuel cell interfaces

    International Nuclear Information System (INIS)

    Lussier, A.; Dvorak, J.; Stadler, S.; Holroyd, J.; Liberati, M.; Arenholz, E.; Ogale, S.B.; Wu, T.; Venkatesan, T.; Idzerda, Y.U.

    2008-01-01

    Interfacial stress is thought to have significant effects on electrical and oxygen transport properties in thin films of importance in solid oxide fuel cell applications. We investigate how in-plane biaxial stress modifies the electronic structure of La 2/3 Ca 1/3 MnO 3 and La 1/2 Sr 1/2 MnO 3 thin films prepared by pulsed laser deposition on three different substrates to vary the in-plane stress from tensile to compressive. The electronic structure was probed by X-ray absorption spectroscopy of the Mn L 2,3 -edge to characterize the interfacial disruption in this region in an element-specific, site-specific manner. The compressive or tensile interfacial strain modifies the relative concentrations of La and Sr in the interfacial region in order to achieve a better lattice match to the contact material. This atomic migration generates an interfacial region dominated by a compound with a single valency for the transition metal ion, resulting in a severe barrier to oxygen and electron transport through this region

  5. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  6. Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Jeng, Jiann-Shing, E-mail: jsjeng@mail.nutn.edu.tw

    2016-08-15

    Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancement-mode devices, either without or with Nb additives. High-valence niobium ion (ionic charge = +5) has a larger ionic potential and similar ionic radius to Zn{sup 2+} and Sn{sup 4+} ions. As compared with the pure ZTO device, introducing Nb{sup 5+} ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb + Sn) molar ratios of NZTO films. - Highlights: • Ultra-thin high-valence niobium doped zinc-tin oxide (NZTO) thin films are prepared using a solution process. • Nb dopants in ZTO films reduce the oxygen vacancy and subgap adsorption of the ZTO films. • The Nb-doping concentration of the NZTO channel layer has a strong influence on the TFT performance.

  7. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  8. Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

    2008-01-01

    Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

  9. Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

    Energy Technology Data Exchange (ETDEWEB)

    Denayer, Jessica [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Bister, Geoffroy [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Simonis, Priscilla [Laboratory LPS, University of Namur, rue de bruxelles 61, 5000 Namur (Belgium); Colson, Pierre; Maho, Anthony [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Aubry, Philippe [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Vertruyen, Bénédicte [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Henrist, Catherine, E-mail: catherine.henrist@ulg.ac.be [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Lardot, Véronique; Cambier, Francis [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Cloots, Rudi [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium)

    2014-12-01

    Highlights: • Surfactant-assisted USP: a novel and low cost process to obtain high quality nickel oxide films, with or without lithium dopant. • Increased uniformity and reduced light scattering thanks to the addition of a surfactant. • Improved electrochromic performance (coloration efficiency and contrast) for lithium-doped films by comparison with the undoped NiO film. - Abstract: Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

  10. Optical and Electrical Properties of Copper Oxide Thin Films Synthesized by Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-08-01

    Full Text Available Copper oxide (CuO thin films have been synthesized on to glass substrates at different temperatures in the range 250-450 °C by spray pyrolysis technique from aqueous solution using cupric acetate Cu(CH3COO2·H2O as a precursor. The structure of the deposited CuO thin films characterized by X-ray diffraction, the surface morphology was observed by a scanning electron microscope, the presence of elements was detected by energy dispersive X-ray analysis, the optical transmission spectra was recorded by ultraviolet-visible spectroscopy and electrical resistivity was studied by Van-der Pauw method. All the CuO thin films, irrespective of growth temperature, showed a monoclinic structure with the main CuO (111 orientation, and the crystallite size was about 8.4784 Å for the thin film synthesized at 350 °C. The optical transmission of the as-deposited film is found to decrease with the increase of substrate temperature, the optical band gap of the thin films varies from 1.90 to 1.60 eV and the room temperature electrical resistivity varies from 30 to18 Ohm·cm for the films grown at different substrate temperatures.

  11. Excimer laser assisted re-oxidation of BaTiO3 thin films on Ni metal foils

    International Nuclear Information System (INIS)

    Bharadwaja, S. S. N.; Ko, S. W.; Qu, W.; Clark, T.; Rajashekhar, A.; Motyka, M.; Podraza, N.; Randall, C. A.; Trolier-McKinstry, S.

    2016-01-01

    Excimer laser assisted re-oxidation for reduced, crystallized BaTiO 3 thin films on Ni-foils was investigated. It was found that the BaTiO 3 can be re-oxidized at an oxygen partial pressure of ∼50 mTorr and substrate temperature of 350 °C without forming a NiO x interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mV rms excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO 3 thin films can be re-oxidized to an oxygen stoichiometry close to ∼3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiO x formation between the BaTiO 3 and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001] C and [111] C BaTiO 3 single crystals indicate that the re-oxidation of BaTiO 3 single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients

  12. Achievement report for 1st phase (fiscal 1974-80) Sunshine Program research and development - Hydrogen energy. Research on fuel cell (Research on high-temperature solid electrolyte fuel cell); 1974-1980 nendo suiso energy seika hokokusho. Nenryo denchi no kenkyu (koon kotai denkaishitsu nenryo denchi no kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1981-03-01

    Relative to the research and development of technologies for fabricating, and assessing, materials for the constitution of high-temperature solid electrolyte fuel cells, stabilized zirconia solid electrolyte fuel cell manufacturing technologies are developed by use of thin film formation techniques such as high-frequency sputtering, plasma CVD (chemical vapor deposition), and the thermolysis of organic zirconia compound coating. As the result, it is found that high-frequency sputtering produces thin film which is satisfying in terms of cost efficiency. Furthermore, it is found that defects in solid electrolytic thin film formed by the high-frequency sputtering method, that is, pinholes and cracks, will be remedied when the coating thermolysis method is jointly applied. In the research on fuel cell power systems, column-type high-temperature solid electrolyte fuel cells are built, and a power generation test is conducted. The test is successfully completed when the output of a fuel cell of the 9-column module structure gradually increases until a maximum output of 110W is achieved. (NEDO)

  13. Characterization of Ag-doped vanadium oxide (AgxV2O5) thin film for cathode of thin film battery

    International Nuclear Information System (INIS)

    Hwang, H.S.; Oh, S.H.; Kim, H.S.; Cho, W.I.; Cho, B.W.; Lee, D.Y.

    2004-01-01

    The effect of silver co-sputtering on the characteristics of amorphous V 2 O 5 films, grown by dc reactive sputtering, is investigated. The co-sputtering process influences the growth mechanism as well as the characteristics of the V 2 O 5 films. X-ray diffraction (XRD), Inductively coupled plasma-atomic emission spectrometry (ICP-AES), field emission-scanning electron microscopy (FE-SEM), Fourier transform infrared spectrometry (FT-IR) and X-ray photoelectron spectrometry (XPS) results indicate that the microstructure of the V 2 O 5 films is affected by the rf power of the co-sputtered silver. In addition, an all-solid-state thin film battery with full cell structure of Li/LiPON/Ag x V 2 O 5 /Pt has been fabricated. It is found that the silver co-sputtered V 2 O 5 cathode film exhibits better cycle performance than an undoped one

  14. Work function and quantum efficiency study of metal oxide thin films on Ag(100)

    Science.gov (United States)

    Chang, V.; Noakes, T. C. Q.; Harrison, N. M.

    2018-04-01

    Increasing the quantum efficiency (QE) of metal photocathodes is in the design and development of photocathodes for free-electron laser applications. The growth of metal oxide thin films on certain metal surfaces has previously been shown to reduce the work function (WF). Using a photoemission model B. Camino et al. [Comput. Mater. Sci. 122, 331 (2016), 10.1016/j.commatsci.2016.05.025] based on the three-step model combined with density functional theory calculations we predict that the growth of a finite number of MgO(100) or BaO(100) layers on the Ag(100) surface increases significantly the QE compared with the clean Ag(100) surface for a photon energy of 4.7 eV. Different mechanisms for affecting the QE are identified for the different metal oxide thin films. The addition of MgO(100) increases the QE due to the reduction of the WF and the direct excitation of electrons from the Ag surface to the MgO conduction band. For BaO(100) thin films, an additional mechanism is in operation as the oxide film also photoemits at this energy. We also note that a significant increase in the QE for photons with an energy of a few eV above the WF is achieved due to an increase in the inelastic mean-free path of the electrons.

  15. High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-08-01

    High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

  16. Biomass-powered Solid Oxide Fuel Cells : Experimental and Modeling Studies for System Integrations

    NARCIS (Netherlands)

    Liu, M.

    2013-01-01

    Biomass is a sustainable energy source which, through thermo-chemical processes of biomass gasification, is able to be converted from a solid biomass fuel into a gas mixture, known as syngas or biosyngas. A solid oxide fuel cell (SOFC) is a power generation device that directly converts the chemical

  17. An afterburner-powered methane/steam reformer for a solid oxide fuel cells application

    Science.gov (United States)

    Mozdzierz, Marcin; Chalusiak, Maciej; Kimijima, Shinji; Szmyd, Janusz S.; Brus, Grzegorz

    2018-04-01

    Solid oxide fuel cell (SOFC) systems can be fueled by natural gas when the reforming reaction is conducted in a stack. Due to its maturity and safety, indirect internal reforming is usually used. A strong endothermic methane/steam reforming process needs a large amount of heat, and it is convenient to provide thermal energy by burning the remainders of fuel from a cell. In this work, the mathematical model of afterburner-powered methane/steam reformer is proposed. To analyze the effect of a fuel composition on SOFC performance, the zero-dimensional model of a fuel cell connected with a reformer is formulated. It is shown that the highest efficiency of a solid oxide fuel cell is achieved when the steam-to-methane ratio at the reforming reactor inlet is high.

  18. LaSrMnO{sub 3} thin films on YSZ/YSZ - NiO by the spin coating method: synthesis and microstructural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, Laurenia Martins Pereira; Souza, Graziele Lopes de [Universidade Federal do Rio Grande do Norte (NUPEG/UFRN), Natal, RN (Brazil). Nucleo de Pesquisa em Petroleo e Gas], Email: lauengmat@hotmail.com; Macedo, Daniel Araujo de; Cela, Beatriz; Paskocimas, Carlos Alberto; Nascimento, Rubens Maribondo do [Universidade Federal do Rio Grande do Norte (PPGCEM/UFRN), Natal, RN (Brazil). Programa de Pos Graduacao em Ciencia e Engenharia de Materiais; Cesario, Moises Romolos [Universidade Federal do Rio Grande do Norte (PPGQ/UFRN), Natal, RN (Brazil). Programa de Pos Graduacao em Quimica

    2010-07-01

    Fuel cells are devices which work by electrochemical mechanism directly converting the chemical energy, by fuel the oxidizing, in electric energy. The Solid Oxide Fuel Cell - SOFC consist an anode, an electrolyte and one cathode made with ceramic materials. The most widely known functional materials used in SOFC are Yttria-stabilized zirconia electrolyte (YSZ), composite anode of YSZ-Ni O and strontium-doped lanthanum manganite cathode (La{sub 1-x}Sr{sub x}MnO{sub 3} - LGSM). In this work the thin films of cathode LSM were deposited by spin coating in a half cell YSZ/YSZ - Ni O. The polymeric resin of 22% strontium-doped lanthanum manganite (LSM 22) was attained by the polymeric precursor method. This resin was directly used for the deposition process. The deposition of 2 or 4 layers occurred by spin coating method with the following conditions: 500 rpm during 15 s and 300 rpm during 40 s. Each layer was thermally treated at 500 deg C for 2 h and heating rate equal to 1 deg C/min. The multi layers were sintered at 1000 deg C for 2 h, heating rate of 3 deg C/min and characterized by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). The LSM 22 thin films presented microstructure with thin particles and thickness of 1 {mu}m. The surface cracks' quantity and size reduction tendency was observed with the increase of the layers deposition number. (author)

  19. Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

    Energy Technology Data Exchange (ETDEWEB)

    Baldi, G., E-mail: giacomo.baldi@cnr.it; Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, I-43124 Parma (Italy); Giusti, G.; Nozar, P.; Toccoli, T.; Verucchi, R. [IMEM-CNR Institute, Via alla Cascata 56/C, Povo – I-38123 Trento (Italy); Collini, C.; Lorenzelli, L. [FBK Bruno Kessler Foundation, Via Sommarive 18, I-38123 Trento (Italy)

    2015-03-10

    We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

  20. Thin film removal mechanisms in ns-laser processing of photovoltaic materials

    International Nuclear Information System (INIS)

    Bovatsek, J.; Tamhankar, A.; Patel, R.S.; Bulgakova, N.M.; Bonse, J.

    2010-01-01

    The removal of thin films widely used in photovoltaics (amorphous silicon, tin oxide, zinc oxide, aluminum, and molybdenum) is studied experimentally using multi-kHz Q-switched solid-state lasers at 532 nm and 1064 nm wavelengths. The processing ('scribing') is performed through the film-supporting glass plate at scribing speeds of the order of m/s. The dependence of the film removal threshold on the laser pulse duration (8 ns to 40 ns) is investigated and the results are complemented by a multi-layer thermal model used for numerical simulations of the laser-induced spatio-temporal temperature field within the samples. Possible film removal mechanisms are discussed upon consideration of optical, geometrical, thermal and mechanical properties of the layers.

  1. Thermochemical hydrogen generation of indium oxide thin films

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2017-03-01

    Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  2. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    International Nuclear Information System (INIS)

    Mohd Ali, N I; Misran, N; Mansor, M F; Jamlos, M F

    2017-01-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified. (paper)

  3. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    Science.gov (United States)

    Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

    2017-05-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

  4. Performance of a novel type of electrolyte-supported solid oxide fuel cell with honeycomb structure

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz-Morales, Juan Carlos; Savvin, Stanislav N.; Nunez, Pedro [Departmento de Quimica Inorganica, Universidad de La Laguna, 38200 Tenerife (Spain); Marrero-Lopez, David [Departamento de Fisica Aplicada I, Universidad de Malaga, 29071 Malaga (Spain); Pena-Martinez, Juan; Canales-Vazquez, Jesus [Instituto de Energias Renovables-Universidad de Castilla la Mancha, 02006 Albacete (Spain); Roa, Joan Josep; Segarra, Merce [DIOPMA, Departamento de Ciencia de los Materiales e Ing. Metalurgica, 08028 Barcelona (Spain)

    2010-01-15

    A novel design, alternative to the conventional electrolyte-supported solid oxide fuel cell (SOFC) is presented. In this new design, a honeycomb-electrolyte is fabricated from hexagonal cells, providing high mechanical strength to the whole structure and supporting the thin layer used as electrolyte of a SOFC. This new design allows a reduction of {proportional_to}70% of the electrolyte material and it renders modest performances over 320 mW cm{sup -2} but high volumetric power densities, i.e. 1.22 W cm{sup -3} under pure CH{sub 4} at 900 C, with a high OCV of 1.13 V, using the standard Ni-YSZ cermet as anode, Pt as cathode material and air as the oxidant gas. (author)

  5. The study of flow and proton exchange interactions in the cylindrical solid oxide fuel cell

    CERN Document Server

    Saievar-Iranizad, E

    2002-01-01

    The solid oxide fuel cell operates at high temperature of about 1000 deg C. In this temperature, some known materials such as Ni, ... which is abundant in the nature, can be used as a catalyst in the electrodes. The electrolytes of such cell solid oxide fuel cell can be made through non-porous solid ceramics such as Zircon's (ZrO sub 2). It can be stabilized using a doped Yttrium oxide. The importance of Yttria-stabilised Zirconia at high temperature belongs to the transport of oxygen ions through the electrolyte. Oxygen using in the hot cathode side causes a considerable reduction in the concentration of oxygen molecules. The oxygen ions exchange through the electrolyte relates to the molecular oxygen concentration gradient between the anode and cathode. Applying fuels such as hydrogen or natural gas in the anode and its chemical reaction with oxygen ions transfer from cathode through the electrolyte, produce electricity, water and heat. To study the ion exchange and its interaction into solid oxide fuel cel...

  6. Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

    Science.gov (United States)

    Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

    2015-12-01

    Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

  7. Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

    International Nuclear Information System (INIS)

    Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

    2013-01-01

    Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

  8. Transparent indium zinc oxide thin films used in photovoltaic cells based on polymer blends

    International Nuclear Information System (INIS)

    Besleaga, Cristina; Ion, L.; Ghenescu, Veta; Socol, G.; Radu, A.; Arghir, Iulia; Florica, Camelia; Antohe, S.

    2012-01-01

    Indium zinc oxide (IZO) thin films were obtained using pulsed laser deposition. The samples were prepared by ablation of targets with In concentrations, In/(In + Zn), of 80 at.%, at low substrate temperatures under reactive atmosphere. IZO films were used as transparent electrodes in polymer-based – poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 1:1 blend – photovoltaic cells. The action spectra measurements revealed that IZO-based photovoltaic structures have performances comparable with those using indium–tin–oxide as transparent electrode. - Highlights: ► Indium zinc oxide films were grown by pulsed laser deposition at room temperature. ► The films had large free carrier density and reasonably high mobility. ► These films fit for transparent electrodes in polymer-based photovoltaic cells.

  9. Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

    Science.gov (United States)

    Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

    2018-05-01

    We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

  10. Solid-State Thin-Film Supercapacitors with Ultrafast Charge/Discharge Based on N-Doped-Carbon-Tubes/Au-Nanoparticles-Doped-MnO2 Nanocomposites.

    Science.gov (United States)

    Lv, Qiying; Wang, Shang; Sun, Hongyu; Luo, Jun; Xiao, Jian; Xiao, JunWu; Xiao, Fei; Wang, Shuai

    2016-01-13

    Although carbonaceous materials possess long cycle stability and high power density, their low-energy density greatly limits their applications. On the contrary, metal oxides are promising pseudocapacitive electrode materials for supercapacitors due to their high-energy density. Nevertheless, poor electrical conductivity of metal oxides constitutes a primary challenge that significantly limits their energy storage capacity. Here, an advanced integrated electrode for high-performance pseudocapacitors has been designed by growing N-doped-carbon-tubes/Au-nanoparticles-doped-MnO2 (NCTs/ANPDM) nanocomposite on carbon fabric. The excellent electrical conductivity and well-ordered tunnels of NCTs together with Au nanoparticles of the electrode cause low internal resistance, good ionic contact, and thus enhance redox reactions for high specific capacitance of pure MnO2 in aqueous electrolyte, even at high scan rates. A prototype solid-state thin-film symmetric supercapacitor (SSC) device based on NCTs/ANPDM exhibits large energy density (51 Wh/kg) and superior cycling performance (93% after 5000 cycles). In addition, the asymmetric supercapacitor (ASC) device assembled from NCTs/ANPDM and Fe2O3 nanorods demonstrates ultrafast charge/discharge (10 V/s), which is among the best reported for solid-state thin-film supercapacitors with both electrodes made of metal oxide electroactive materials. Moreover, its superior charge/discharge behavior is comparable to electrical double layer type supercapacitors. The ASC device also shows superior cycling performance (97% after 5000 cycles). The NCTs/ANPDM nanomaterial demonstrates great potential as a power source for energy storage devices.

  11. Raman scattering, electrical and optical properties of fluorine-doped tin oxide thin films with (200) and (301) preferred orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Intelligence Material Team, Korea Institute of Ceramic Eng. and Tech., Gasan-digtial-ro 10 Gil 77 Geumcheon-gu, 153-801 Seoul (Korea, Republic of); Riu, Doh-Hyung [Dept. of New Material Sci. and Eng., Seoul National University of Technology, Seoul (Korea, Republic of)

    2014-12-15

    (200) and (301) preferred oriented fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added and water-based FTO precursor solutions, respectively. (200) oriented FTO thin film from ethanol-added solution shows the lower electrical resistivity and visible light transmission than (301) preferred thin film from water-based solution. It is due to the higher carrier concentration and electron mobility in (200) oriented crystals, that is, the lower ionized impurity scattering. The higher electron concentration is related to the higher optical band gap energy, the lower visible light transmission, and the higher IR reflection. For (301) preferred FTO thin films from water-based solution, the lower carrier concentration and electron mobility make the higher electrical resistivity and visible light transmission. Raman scattering analysis shows that IR active modes prominent in (200) oriented FTO thin film are related with the lower electrical resistivity. - Highlights: • We coated fluorine-doped tin oxide thin films with preferred orientation of (200) and (301). • We examine changes in the level of electrical and optical properties with the orientation. • (200) preferred orientation showed lower electrical resistivity and optical transmittance. • (200) oriented thin films have higher electron concentrations that are related with IR active modes.

  12. Vanadium oxide thin films and fibers obtained by acetylacetonate sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Berezina, O.; Kirienko, D. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Pergament, A., E-mail: aperg@psu.karelia.ru [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Stefanovich, G.; Velichko, A. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Zlomanov, V. [Department of Chemistry, Moscow State University, 119991 Moscow (Russian Federation)

    2015-01-01

    Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol–gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO{sub 2} phase is chosen: 1) 25–550 °C and 2) 550–600 °C. The obtained films demonstrate the metal–insulator transition and electrical switching. Also, the effect of the polyvinylpyrrolidone additive concentration and electrospinning parameters on qualitative (absence of defects and gel drops) and quantitative (length and diameter) characteristics of vanadium oxide fibers is studied. - Highlights: • Vanadium oxide thin films and fibers are synthesized by sol–gel method. • The effect of annealing, atmosphere, time and electrospinning parameters is studied. • Produced VO{sub 2} structures exhibit metal–insulator transition and electrical switching.

  13. Optical constants and band edge of amorphous zinc oxide thin films

    International Nuclear Information System (INIS)

    Khoshman, Jebreel M.; Kordesch, Martin E.

    2007-01-01

    The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

  14. Thin film structures and phase stability

    International Nuclear Information System (INIS)

    Clemens, B.M.; Johnson, W.L.

    1990-01-01

    This was a two day symposium, with invited and contributed papers as well as an evening poster session. The first day concentrated on solid state reactions with invited talks by Lindsay Greer from the University of Cambridge, King Tu from IBM Yorktown Heights, and Carl Thompson from MIT. Professor Greer observed that the diffusion of Zr is 10 6 times slower than that of Ni in amorphous NiZr, confirming that Ni is the mobile species in solid state amorphization. King Tu explained the formation of metastable phases in this film diffusion couples by the concept of maximum rate of free energy change. Carl Thompson discussed the formation of amorphous phases in metal silicon systems, and discussed a two stage nucleation and growth process. The contributed papers also generated discussion on topics such as phase segregation, amorphous silicide formation, room temperature oxidation of silicon, and nucleation during ion beam irradiation. There was a lively poster session on Monday evening with papers on a wide variety of topics covering the general area of thin film science. The second day had sessions Epitaxy and Multilayer Structure I and II, with the morning focussing on epitaxial and heteroepitaxial growth of thin films. Robin Farrow of IBM Almaden led off with an invited talk where he reported on some remarkable success he and his co-workers have had in growing single crystal epitaxial thin films and superlattices of silver, iron, cobalt and platinum on GaAs. This was followed by several talks on epitaxial growth and characterization. The afternoon focused on interfaces and structure of multilayered materials. A session on possible stress origins of the supermodulus effect was highlighted by lively interaction from the audience. Most of the papers presented at the symposium are presented in this book

  15. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

    Science.gov (United States)

    Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

    2017-03-01

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  16. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    KAUST Repository

    Faber, Hendrik

    2017-04-28

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  17. Generator module architecture for a large solid oxide fuel cell power plant

    Science.gov (United States)

    Gillett, James E.; Zafred, Paolo R.; Riggle, Matthew W.; Litzinger, Kevin P.

    2013-06-11

    A solid oxide fuel cell module contains a plurality of integral bundle assemblies, the module containing a top portion with an inlet fuel plenum and a bottom portion receiving air inlet feed and containing a base support, the base supports dense, ceramic exhaust manifolds which are below and connect to air feed tubes located in a recuperator zone, the air feed tubes passing into the center of inverted, tubular, elongated, hollow electrically connected solid oxide fuel cells having an open end above a combustion zone into which the air feed tubes pass and a closed end near the inlet fuel plenum, where the fuel cells comprise a fuel cell stack bundle all surrounded within an outer module enclosure having top power leads to provide electrical output from the stack bundle, where the fuel cells operate in the fuel cell mode and where the base support and bottom ceramic air exhaust manifolds carry from 85% to all 100% of the weight of the stack, and each bundle assembly has its own control for vertical and horizontal thermal expansion control.

  18. Rapid, cool sintering of wet processed yttria-stabilized zirconia ceramic electrolyte thin films

    OpenAIRE

    Park, Jun-Sik; Kim, Dug-Joong; Chung, Wan-Ho; Lim, Yonghyun; Kim, Hak-Sung; Kim, Young-Beom

    2017-01-01

    Here we report a photonic annealing process for yttria-stabilized zirconia films, which are one of the most well-known solid-state electrolytes for solid oxide fuel cells (SOFCs). Precursor films were coated using a wet-chemical method with a simple metal-organic precursor solution and directly annealed at standard pressure and temperature by two cycles of xenon flash lamp irradiation. The residual organics were almost completely decomposed in the first pre-annealing step, and the fluorite cr...

  19. Fluorocarbon thin film with superhydrophobic property prepared by pyrolysis of hexafluoropropylene oxide

    International Nuclear Information System (INIS)

    Wang Jun; Song Xue; Li Rui; Shen Jinpeng; Yang Guangcheng; Huang Hui

    2012-01-01

    Highlights: ► We successfully prepared nanostructured fluorocarbon thin films using CVD method without any catalysts at low pyrolysis temperature (200–300 °C) of HFPO. ► The films show disparate morphology, high content of CF 2 (>90%), which are also characteristic of bulk PTFE. ► The film deposited at 300 °C shows superhydrophobic property (water contact angle of 172.7°). - Abstract: A fluorocarbon thin film with superhydrophobic property was prepared by chemical vapor deposition (CVD) method at low temperature (200–300 °C) via pyrolysis hexafluoropropylene oxide (HFPO). The experiment results indicated the morphology and structure of fluorocarbon films were strongly dependent on the pyrolysis temperature. As shown through atomic force microscope (AFM), the surface morphology of the films ranged from rodlike grains to sheets. Fourier transform infrared (FTIR) spectroscopy revealed that all the films contained the vibrational frequencies of linear CF 2 chains, which were also characteristic of bulk poly tetrafluoroethylene (PTFE). X-ray photoelectron spectroscopy (XPS) analysis showed that CF 2 structures were predominant in the films with high order. The film deposited at 300 °C exhibited a superhydrophobic surface with contact angle up to 172.7°.

  20. New Cathode Materials for Intermediate Temperature Solid Oxide Fuel Cells

    Energy Technology Data Exchange (ETDEWEB)

    Allan J. Jacobson

    2006-09-30

    the perovskite compositions that were being investigated at PNNL, in order to assess the relative importance of the intrinsic properties such as oxygen ion diffusion and surface exchange rates as predictors of performance in cell tests. We then used these measurements to select new materials for scaled up synthesis and performance evaluation in single cell tests. The results of the single cell tests than provided feedback to the materials synthesis and selection steps. In this summary, the following studies are reported: (1) Synthesis, characterization, and DC conductivity measurements of the P1 compositions La{sub 0.8}Sr{sub 0.2}FeO{sub 3-x} and La{sub 0.7}Sr{sub 0.3}FeO{sub 3-x} were completed. A combinational approach for preparing a range P1 (La,Sr)FeO{sub 3} compositions as thin films was investigated. Synthesis and heat treatment of amorphous SrFeO{sub 3-x} and LaFeO{sub 3-x} films prepared by pulsed laser deposition are described. (2) Oxygen transport properties of K1 compositions La{sub x}Pr{sub 2-x}NiO{sub 4+d} (x =2.0, 1.9, 1.2, 1.0 and 0) measured by electrical conductivity relaxation are presented in this report. Area specific resistances determined by ac impedance measurements for La{sub 2}NiO{sub 4+{delta}} and Pr{sub 2}NiO{sub 4+{delta}} on CGO are encouraging and suggest that further optimization of the electrode microstructure will enable the target to be reached. (3) The oxygen exchange kinetics of the oxygen deficient double perovskite LnBaCo{sub 2}O{sub 5.5+{delta}} (Ln=Pr and Nd) were determined by electrical conductivity relaxation. The high electronic conductivity and rapid diffusion and surface exchange kinetics of PBCO suggest its application as cathode material in intermediate temperature solid oxide fuel cells. The first complete cell measurements were performed on Ni/CGO/CGO/PBCO/CGO cells. (4) The oxygen exchange kinetics of highly epitaxial thin films of PrBaCo{sub 2}O{sub 5.5+{delta}} (PBCO) has been determined by electrical conductivity

  1. Electrochromics for smart windows: Oxide-based thin films and devices

    Energy Technology Data Exchange (ETDEWEB)

    Granqvist, Claes G.

    2014-08-01

    Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

  2. Electrochromics for smart windows: Oxide-based thin films and devices

    International Nuclear Information System (INIS)

    Granqvist, Claes G.

    2014-01-01

    Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

  3. Thin-film calorimetry. In-situ characterization of materials for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Omelcenko, Alexander; Wulfmeier, Hendrik; Albrecht, Daniel; Fritze, Holger [Clausthal Univ. of Technology, Goslar (Germany). Inst. of Energy Research and Physical Technologies; El Mofid, Wassima; Ivanov, Svetlozar; Bund, Andreas [Ilmenau Univ. of Technology (Germany). Dept. of Electrochemistry

    2017-11-15

    Thin-film calorimetry allows for qualitative and quantitative in-situ analysis of thermodynamic properties of thin films and thin-film systems from room temperature up to 1000 C. It is based on highly sensitive piezoelectric langasite resonators which serve simultaneously as planar temperature sensors and substrates for the films of interest. Generation or consumption of heat during phase transformations of the films cause deviations from the regular course of the resonance frequency. Thermodynamic data such as phase transformation temperatures and enthalpies are extracted from these deviations. Thin-film calorimetry on Sn and Al thin films is performed to prove the concept. The results demonstrate high reproducibility of the measurement approach and are in agreement with literature data obtained by established calorimetric techniques. The calibration of the system is done in different atmospheres by application of defined heat pulses via heating structures. The latter replace the films of interest and simulate phase transformations to provide detailed analysis of the heat transfer mechanisms occurring in the measurement system. Based on this analysis, a data evaluation concept is developed. Application-relevant studies are performed on thin films of the lithium-ion battery materials NMC(A), NCA, LMO, and MoS{sub 2}. Their phase transformation temperatures and enthalpies are evaluated in oxidizing and reducing atmospheres. Furthermore, their thermodynamic stability ranges are presented. Finally, measurements on all-solid-state thin-film batteries during electrochemical cycling are performed. They demonstrate the suitability of the system for in-situ investigations.

  4. Thin-film method-XRF determination of the composition of rare earth oxides

    International Nuclear Information System (INIS)

    Xiao Deming

    1992-01-01

    The author describes the thin-film sample preparation by precipitation-pumping filtering method and the composition of rare earth oxide materials by XRF determination. The determination limits are 0.01% to 0.17%. The coefficients of variation are in the range of 0.85% to 14.9%. The analytical results of several kinds of rare earth oxide materials show that this method can be applied to the determination of the composition of rare earth oxide mixtures

  5. Oxidation behaviour and electrical properties of cobalt/cerium oxide composite coatings for solid oxide fuel cell interconnects

    DEFF Research Database (Denmark)

    Harthøj, Anders; Holt, Tobias; Møller, Per

    2015-01-01

    This work evaluates the performance of cobalt/cerium oxide (Co/CeO2) composite coatings and pure Co coatings to be used for solid oxide fuel cell (SOFC) interconnects. The coatings are electroplated on the ferritic stainless steels Crofer 22 APU and Crofer 22H. Coated and uncoated samples...

  6. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V. [School of Materials Science and Engineering, University of New South Wales, Sydney 2052 (Australia); Ihlefeld, J. [Electronic, Optical, and Nanomaterials Department, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2014-10-28

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO{sub 2}/(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  7. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    International Nuclear Information System (INIS)

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V.; Ihlefeld, J.

    2014-01-01

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO 2 /(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  8. Conformation of LSM/YSZ and LSM ceramic films obtained by the citrate and solid mixture techniques; Conformacao de filmes ceramicos de LSM e LSM/YSZ obtidos pelas tecnicas citratos e mistura de solidos

    Energy Technology Data Exchange (ETDEWEB)

    Chiba, R.; Vargas, R.A.; Andreoli, M.; Seo, E.S.M., E-mail: rchiba@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais. Lab. de SOFC - Insumos e Componentes

    2009-07-01

    In this work, the ceramic films of LSM/YSZ (strontium-doped lanthanum manganite/Yttria-stabilized zirconia) and LSM used as cathodes of the solid oxide fuel cells (SOFC) are conformed by the wet powder spraying technique. The composite LSM/YSZ was obtained by the solid mixture technique and LSM by the citrate technique. For the formation of the LSM/YSZ and LSM ceramic films was necessary the preparation of dispersed ceramic suspensions for the deposition in YSZ substrate, used as electrolyte of the CaCOS. These powders were conformed using an aerograph for the deposition of the LSM/YSZ and LSM thin films of approximately 40 microns. The half-cells had been characterized by X-ray diffractometry (XRD), identifying the phases hexagonal (LSM) and cubica (YSZ). And electronic scanning electron microscopy (SEM) was used to evaluate the adherence and porosity of the ceramic films according to the characteristics of the cathode. (author)

  9. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  10. Oxidation of Zr and thin (0.2-4 nm) Zr films on Ag: An ESCA investigation

    International Nuclear Information System (INIS)

    Steiner, P.; Sander, I.; Siegwart, B.; Huefner, S.

    1987-01-01

    The oxidation of polycrystalline Zr under 10 -8 -10 -3 mbar oxygen pressure in the temperature range 25 0 -350 0 C is obtained from ESCA experiments. Changes in the ESCA spectra for thin Zr films on Ag oxidized at 250 0 C are observed and compared to the bulk Zr-metal. Thin Ag overlayers on Zr show a catalytic increase of the room temperature oxidation of Zr. (orig.)

  11. Hydrogen sulfide-powered solid oxide fuel cells

    Science.gov (United States)

    Liu, Man

    2004-12-01

    The potential utilization of hydrogen sulfide as fuel in solid oxide fuel cells has been investigated using an oxide-ion conducting YSZ electrolyte and different kinds of anode catalysts at operating temperatures in the range of 700--900°C and at atmospheric pressure. This technology offers an economically attractive alternative to present methods for removing toxic and corrosive H2S gas from sour gas streams and a promising approach for cogenerating electrical energy and useful chemicals. The primary objective of the present research was to find active and stable anode materials. Fuel cell experimental results showed that platinum was a good electrocatalyst for the conversion of H2S, but the Pt/YSZ interface was physically unstable due to the reversible formation and decomposition of PtS in H 2S streams at elevated temperatures. Moreover, instability of the Pt/YSZ interface was accelerated significantly by electrochemical reactions, and ultimately led to the detachment of the Pt anode from the electrolyte. It has been shown that an interlayer of TiO2 stabilized the Pt anode on YSZ electrolyte, thereby prolonging cell lifetime. However, the current output for a fuel cell using Pt/TiO2 as anode was not improved compared to using Pt alone. It was therefore necessary to investigate novel anode systems for H 2S-air SOFCs. New anode catalysts comprising composite metal sulfides were developed. These catalysts exhibited good electrical conductivity and better catalytic activity than Pt. In contrast to MoS2 alone, composite catalysts (M-Mo-S, M = Fe, Co, Ni) were not volatile and had superior stability. However, when used for extended periods of time, detachment of Pt current collecting film from anodes comprising metal sulfides alone resulted in a large increase in contact resistance and reduction in cell performance. Consequently, a systematic investigation was conducted to identify alternative electronic conductors for use with M-Mo-S catalysts. Anode catalysts

  12. Synthesis and characterization of nanocomposite polymer blend electrolyte thin films by spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chapi, Sharanappa; Niranjana, M.; Devendrappa, H., E-mail: dehu2010@gmail.com [Department of Physics, Mangalore University, Mangalagangothri - 574 199 (India)

    2016-05-23

    Solid Polymer blend electrolytes based on Polyethylene oxide (PEO) and poly vinyl pyrrolidone (PVP) complexed with zinc oxide nanoparticles (ZnO NPs; Synthesized by Co-precipitation method) thin films have prepared at a different weight percent using the spin-coating method. The complexation of the NPs with the polymer blend was confirmed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR). The variation in film morphology was examined by polarized optical micrographs (POMs). The thermal behavior of blends was investigated under non-isothermal conditions by differential thermal analyses (DTA). A single glass transition temperature for each blend was observed, which supports the existence of compatibility of such system. The obtained results represent that the ternary based thin films are prominent materials for battery and optoelectronic device applications.

  13. Assembly and benign step-by-step post-treatment of oppositely charged reduced graphene oxides for transparent conductive thin films with multiple applications

    Science.gov (United States)

    Zhu, Jiayi; He, Junhui

    2012-05-01

    We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on PET showed a significant decrease in electrical conductivity. In addition, the graphene thin film had a smooth surface with tunable wettability.We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on

  14. Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

    Science.gov (United States)

    Jaiswal, Manoj Kumar; Kanjilal, D.; Kumar, Rajesh

    2013-11-01

    Thin films of tin(IV) oxide (SnO2) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au8+ using 1 pnA current at normal incidence with ion fluences varying from 1 × 1011 ions/cm2 to 5 × 1013 ions/cm2. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV-Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm-1 in FTIR spectrum confirmed the O-Sn-O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO2 were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

  15. Improving the performance of solid oxide fuel cell systems

    OpenAIRE

    Halinen, Matias

    2015-01-01

    Solid oxide fuel cell (SOFC) systems can provide power production at a high electrical efficiency and with very low emissions. Furthermore, they retain their high electrical efficiency over a wide range of output power and offer good fuel flexibility, which makes them well suited for a range of applications. Currently SOFC systems are under investigation by researchers as well as being developed by industrial manufacturers. The first commercial SOFC systems have been on the market for some...

  16. Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

    Directory of Open Access Journals (Sweden)

    James C. Moore

    2014-08-01

    Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

  17. Copper-substituted perovskite compositions for solid oxide fuel cell cathodes and oxygen reduction electrodes in other electrochemical devices

    Science.gov (United States)

    Rieke, Peter C [Pasco, WA; Coffey, Gregory W [Richland, WA; Pederson, Larry R [Kennewick, WA; Marina, Olga A [Richland, WA; Hardy, John S [Richland, WA; Singh, Prabhaker [Richland, WA; Thomsen, Edwin C [Richland, WA

    2010-07-20

    The present invention provides novel compositions that find advantageous use in making electrodes for electrochemical cells. Also provided are electrochemical devices that include active oxygen reduction electrodes, such as solid oxide fuel cells, sensors, pumps and the like. The compositions comprises a copper-substituted ferrite perovskite material. The invention also provides novel methods for making and using the electrode compositions and solid oxide fuel cells and solid oxide fuel cell assemblies having cathodes comprising the compositions.

  18. Comprehensive review on the development of high mobility in oxide thin film transistors

    Science.gov (United States)

    Choi, Jun Young; Lee, Sang Yeol

    2017-11-01

    Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

  19. Thermodynamic analysis of Direct Urea Solid Oxide Fuel Cell in combined heat and power applications

    Science.gov (United States)

    Abraham, F.; Dincer, I.

    2015-12-01

    This paper presents a comprehensive steady state modelling and thermodynamic analysis of Direct Urea Solid Oxide Fuel Cell integrated with Gas Turbine power cycle (DU-SOFC/GT). The use of urea as direct fuel mitigates public health and safety risks associated with the use of hydrogen and ammonia. The integration scheme in this study covers both oxygen ion-conducting solid oxide fuel cells (SOFC-O) and hydrogen proton-conducting solid oxide fuel cells (SOFC-H). Parametric case studies are carried out to investigate the effects of design and operating parameters on the overall performance of the system. The results reveal that the fuel cell exhibited the highest level of exergy destruction among other system components. Furthermore, the SOFC-O based system offers better overall performance than that with the SOFC-H option mainly due to the detrimental reverse water-gas shift reaction at the SOFC anode as well as the unique configuration of the system.

  20. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    Science.gov (United States)

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  1. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  2. The study of flow and proton exchange interactions in the cylindrical solid oxide fuel cell

    International Nuclear Information System (INIS)

    Saievar-Iranizad, E.; Malekifar, A.

    2002-01-01

    The solid oxide fuel cell operates at high temperature of about 1000 deg C. In this temperature, some known materials such as Ni, ... which is abundant in the nature, can be used as a catalyst in the electrodes. The electrolytes of such cell solid oxide fuel cell can be made through non-porous solid ceramics such as Zircon's (ZrO 2 ). It can be stabilized using a doped Yttrium oxide. The importance of Yttria-stabilised Zirconia at high temperature belongs to the transport of oxygen ions through the electrolyte. Oxygen using in the hot cathode side causes a considerable reduction in the concentration of oxygen molecules. The oxygen ions exchange through the electrolyte relates to the molecular oxygen concentration gradient between the anode and cathode. Applying fuels such as hydrogen or natural gas in the anode and its chemical reaction with oxygen ions transfer from cathode through the electrolyte, produce electricity, water and heat. To study the ion exchange and its interaction into solid oxide fuel cell, a mathematical model had been considered in this article. This model simulates and illustrates the interaction, diffusion and oxygen ions exchange into fuel cell. The electrical power of fuel cell due to the ion exchange can be obtained using a simulation method. The ion exchange simulation, diffusion of molecules, their interactions and system development through the mathematical model has been discussed in this paper

  3. Evaluation of the nanomechanical properties of vanadium and native oxide vanadium thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Mamun, M.A.; Zhang, K.; Baumgart, H.; Elmustafa, A.A.

    2015-01-01

    Graphical abstract: - Highlights: • V films of 50, 75, 100 nm thickness were deposited on Si by RF magnetron sputtering. • We studied structural/mechanical properties by XRD, FE-SEM, AFM, and nanoindentation. • The hardness increased from 9.0 to 14.0 GPa for 100 to 50 nm. • The modulus showed no correlation with thickness or native oxide formation. • Native oxide formation resulted in grain enlargement and roughness reduction. - Abstract: Polycrystalline vanadium thin films of 50, 75, and 100 nm thickness were deposited by magnetron sputtering of a vanadium metal target of 2 inch diameter with 99.9% purity on native oxide covered Si substrates. One set of the fabricated samples were kept in moisture free environment and the other set was exposed to ambient air at room temperature for a long period of time that resulted in formation of native oxide prior to testing. The crystal structure and phase purity of the vanadium and the oxidized vanadium thin films were characterized by X-ray diffraction (XRD). The XRD results yield a preferential (1 1 0), and (2 0 0) orientation of the polycrystalline V films and (0 0 4) vanadium oxide (V 3 O 7 ). The vanadium films thickness were verified using field emission scanning electron microscopy and the films surface morphologies were inspected using atomic force microscopy (AFM). AFM images reveal surface roughness was observed to increase with increasing film thickness and also subsequent to oxidation at room temperature. The nanomechanical properties were measured by nanoindentation to evaluate the modulus and hardness of the vanadium and the oxidized vanadium thin films. The elastic modulus of the vanadium and the oxidized vanadium films was estimated as 150 GPa at 30% film thickness and the elastic modulus of the bulk vanadium target is estimated as 135 GPa. The measured hardness of the vanadium films at 30% film thickness varies between 9 and 14 GPa for the 100 and 50 nm films, respectively, exhibiting size effects

  4. Au Nanoparticle Sub-Monolayers Sandwiched between Sol-Gel Oxide Thin Films

    Science.gov (United States)

    Della Gaspera, Enrico; Menin, Enrico; Sada, Cinzia

    2018-01-01

    Sub-monolayers of monodisperse Au colloids with different surface coverage have been embedded in between two different metal oxide thin films, combining sol-gel depositions and proper substrates functionalization processes. The synthetized films were TiO2, ZnO, and NiO. X-ray diffraction shows the crystallinity of all the oxides and verifies the nominal surface coverage of Au colloids. The surface plasmon resonance (SPR) of the metal nanoparticles is affected by both bottom and top oxides: in fact, the SPR peak of Au that is sandwiched between two different oxides is centered between the SPR frequencies of Au sub-monolayers covered with only one oxide, suggesting that Au colloids effectively lay in between the two oxide layers. The desired organization of Au nanoparticles and the morphological structure of the prepared multi-layered structures has been confirmed by Rutherford backscattering spectrometry (RBS), Secondary Ion Mass Spectrometry (SIMS), and Scanning Electron Microscopy (SEM) analyses that show a high quality sandwich structure. The multi-layered structures have been also tested as optical gas sensors. PMID:29538338

  5. Enhanced photoluminescence in transparent thin films of polyaniline–zinc oxide nanocomposite prepared from oleic acid modified zinc oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sajimol Augustine, M., E-mail: sajimollazar@gmail.com [Department of Physics, St. Teresa' s College, Kochi-11, Kerala (India); Jeeju, P.P.; Varma, S.J.; Francis Xavier, P.A. [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India); Jayalekshmi, S., E-mail: lakshminathcusat@gmail.com [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India)

    2014-07-01

    Oleic acid capped zinc oxide (ZnO) nanoparticles have been synthesized by a wet chemical route. The chemical oxidative method is employed to synthesize polyaniline (PANI) and PANI/ZnO nanocomposites doped with four different dopants such as orthophosphoric acid (H{sub 3}PO{sub 4}), hydrochloric acid (HCl), naphthalene-2-sulphonic acid and camphor sulphonic acid (CSA). The samples have been structurally characterized by X-ray diffraction (XRD), field emission scanning electron microscopy and Fourier transform infrared (FT-IR) spectroscopic techniques. A comparison of the photoluminescence (PL) emission intensity of PANI and PANI/ZnO nanocomposites is attempted. The enhanced PL intensity in PANI/ZnO nanocomposites is caused by the presence of nanostructured and highly fluorescent ZnO in the composites. It has been observed that, among the composites, the H{sub 3}PO{sub 4} doped PANI/ZnO nanocomposite is found to exhibit the highest PL intensity because of the higher extent of (pi) conjugation and the more orderly arrangement of the benzenoid and quinonoid units. In the present work, transparent thin films of PANI and PANI/ZnO nanocomposite for which PL intensity is found to be maximum, have been prepared after re-doping with CSA by the spin-coating technique. The XRD pattern of the PANI/ZnO film shows exceptionally good crystallanity compared to that of pure PANI, which suggests that the addition of ZnO nanocrystals helps in enhancing the crystallanity of the PANI/ZnO nanocomposite. There is a significant increase in the PL emission intensity of the PANI/ZnO nanocomposite film making it suitable for the fabrication of optoelectronic devices. - Highlights: • Oleic acid capped zinc oxide nanoparticles are synthesized by wet chemical method. • Polyaniline/zinc oxide nanocomposites are prepared by in-situ polymerization. • Polyaniline and polyaniline/zinc oxide thin films are deposited using spin-coating. • Enhanced photoluminescence is observed in polyaniline

  6. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    International Nuclear Information System (INIS)

    Seveno, R.; Braud, A.; Gundel, H.W.

    2005-01-01

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O 3 , PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO 3 ) by chemical solution deposition is studied. The SrRuO 3 thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO 3 layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 μC/cm were found

  7. Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

    International Nuclear Information System (INIS)

    Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

    2013-01-01

    Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

  8. Life cycle assessment integrated with thermodynamic analysis of bio-fuel options for solid oxide fuel cells.

    Science.gov (United States)

    Lin, Jiefeng; Babbitt, Callie W; Trabold, Thomas A

    2013-01-01

    A methodology that integrates life cycle assessment (LCA) with thermodynamic analysis is developed and applied to evaluate the environmental impacts of producing biofuels from waste biomass, including biodiesel from waste cooking oil, ethanol from corn stover, and compressed natural gas from municipal solid wastes. Solid oxide fuel cell-based auxiliary power units using bio-fuel as the hydrogen precursor enable generation of auxiliary electricity for idling heavy-duty trucks. Thermodynamic analysis is applied to evaluate the fuel conversion efficiency and determine the amount of fuel feedstock needed to generate a unit of electrical power. These inputs feed into an LCA that compares energy consumption and greenhouse gas emissions of different fuel pathways. Results show that compressed natural gas from municipal solid wastes is an optimal bio-fuel option for SOFC-APU applications in New York State. However, this methodology can be regionalized within the U.S. or internationally to account for different fuel feedstock options. Copyright © 2012 Elsevier Ltd. All rights reserved.

  9. Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

    2012-02-01

    The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

  10. Influence of indium doping on the properties of zinc tin oxide films and its application to transparent thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Mu Hee; Ma, Tae Young, E-mail: tyma@gnu.ac.kr

    2014-01-01

    In this study, the effects of indium (In) doping on the properties of zinc tin oxide (ZTO) films are reported. ZTO films were prepared by RF magnetron sputtering followed by In layer deposition, for use as the diffusion source. In order to protect the In layer from peeling, a second ZTO film was deposited on the In film. The annealing at 400 °C for 30 min was carried out to diffuse In atoms into the ZTO films. The structural, optical, and elemental properties of the annealed ZTO/In/ZTO films were investigated by X-ray diffraction, UV/vis spectrophotometry, and X-ray photoluminescence spectroscopy, respectively. The ZTO transparent thin film transistors employing the ZTO/In/ZTO films as the source/drain were prepared, and the effects of the In doped source/drain on the threshold voltage and mobility were characterized and analyzed. - Highlights: • We successfully doped zinc tin oxide (ZTO) films using In as a diffusion source. • Indium (In) was diffused in both directions with the diffusion coefficient of ∼ 4.3 × 10{sup −16} cm{sup 2}/s. • The mobility of ZTO thin film transistor was increased 1.6-times by adopting the In-diffused source/drain.

  11. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/μc-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of θ i = 0 (normal sputtering) and θ i = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at θ i = 80 show the inclined columnar nanostructures compared to those at θ i = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/μc-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of ∝1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at θ i = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition

    Science.gov (United States)

    D'Arcy, Julio M.; Tran, Henry D.; Stieg, Adam Z.; Gimzewski, James K.; Kaner, Richard B.

    2012-05-01

    A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated. Electronic supplementary information (ESI) available: Droplet coalescence, catenoid formation, mechanism of film growth, scanning electron micrographs showing carbon nanotube alignment, flexible transparent films of SWCNTs, AFM images of a chemically converted graphene film, and SEM images of SWCNT free-standing thin films. See DOI: 10.1039/c2nr00010e

  13. Nanoscale reduction of graphene oxide thin films and its characterization.

    Science.gov (United States)

    Lorenzoni, M; Giugni, A; Di Fabrizio, E; Pérez-Murano, Francesc; Mescola, A; Torre, B

    2015-07-17

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

  14. Dataset on electro-optically tunable smart-supercapacitors based on oxygen-excess nanograin tungsten oxide thin film

    Directory of Open Access Journals (Sweden)

    Akbar I. Inamdar

    2017-10-01

    Full Text Available The dataset presented here is related to the research article entitled “Highly Efficient Electro-optically Tunable Smart-supercapacitors Using an Oxygen-excess Nanograin Tungsten Oxide Thin Film” (Akbar et al., 2017 [9] where we have presented a nanograin WO3 film as a bifunctional electrode for smart supercapacitor devices. In this article we provide additional information concerning nanograin tungsten oxide thin films such as atomic force microscopy, Raman spectroscopy, and X-ray diffraction spectroscopy. Moreover, their electrochemical properties such as cyclic voltammetry, electrochemical supercapacitor properties, and electrochromic properties including coloration efficiency, optical modulation and electrochemical impedance spectroscopy are presented.

  15. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Science.gov (United States)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  16. Operando X-ray investigation of solid oxide fuel cell model electrodes

    International Nuclear Information System (INIS)

    Volkov, Sergey Aleksandrovic

    2017-04-01

    A detailed study of three solid oxide fuel cells (SOFCs) related model systems is presented in this work with the aim of the better understanding of the structural changes in cell components associated with their operation. The first model system is an La_0_._6Sr_0_._4CoO_3_-_d (LSC) on yttria-stabilized zirconia (YSZ). Changes in the YSZ(100) single crystal surface structure buried under the squared LSC microelectrode were studied at a synchrotron under operational conditions. High flux photon beam at the synchrotron allowed access to the LSC/YSZ interface. Structural information from the substrate surface at an atomic scale was acquired. Element-specific anomalous XRD data allowed to distinguish between Y and Zr scattering contributions. For the first time, it was shown that the Y cation concentration at the electrode/electrolyte interface strongly depends on the sample environment and the applied potential. The second model system is a Pt/YSZ. Buried YSZ(111) surface and dense Pt film morphology changes under operational conditions were addressed. High-energy X-rays were necessary to collect surface-sensitive information from the interface due to highly absorbing Pt film. The main conclusion is - under conditions applied, the YSZ single crystal surface remains stable at an atomic level. A nagging topic of the Pt ''phase oxide'' formation at the Pt/YSZ interface during anodic polarization was also raised. Although XRD data did not show a clear evidence of PtO_x presence at the interface, energy-dispersive X-ray analysis of the film cross-cut profile after the synchrotron experiment revealed distinct oxygen signal from delaminated parts of the film. Last but not least, the structure of a ZrO_2 ultrathin film grown on a Pt_3Zr(0001) single crystal was studied in ultra-high vacuum for the first time be means of SXRD. This model system is aiming to improve understanding of the electrolyte materials based on ZrO_2 (e.g. YSZ) at an atomic level. The results obtained

  17. Operando X-ray investigation of solid oxide fuel cell model electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Volkov, Sergey Aleksandrovic

    2017-04-15

    A detailed study of three solid oxide fuel cells (SOFCs) related model systems is presented in this work with the aim of the better understanding of the structural changes in cell components associated with their operation. The first model system is an La{sub 0.6}Sr{sub 0.4}CoO{sub 3-d} (LSC) on yttria-stabilized zirconia (YSZ). Changes in the YSZ(100) single crystal surface structure buried under the squared LSC microelectrode were studied at a synchrotron under operational conditions. High flux photon beam at the synchrotron allowed access to the LSC/YSZ interface. Structural information from the substrate surface at an atomic scale was acquired. Element-specific anomalous XRD data allowed to distinguish between Y and Zr scattering contributions. For the first time, it was shown that the Y cation concentration at the electrode/electrolyte interface strongly depends on the sample environment and the applied potential. The second model system is a Pt/YSZ. Buried YSZ(111) surface and dense Pt film morphology changes under operational conditions were addressed. High-energy X-rays were necessary to collect surface-sensitive information from the interface due to highly absorbing Pt film. The main conclusion is - under conditions applied, the YSZ single crystal surface remains stable at an atomic level. A nagging topic of the Pt ''phase oxide'' formation at the Pt/YSZ interface during anodic polarization was also raised. Although XRD data did not show a clear evidence of PtO{sub x} presence at the interface, energy-dispersive X-ray analysis of the film cross-cut profile after the synchrotron experiment revealed distinct oxygen signal from delaminated parts of the film. Last but not least, the structure of a ZrO{sub 2} ultrathin film grown on a Pt{sub 3}Zr(0001) single crystal was studied in ultra-high vacuum for the first time be means of SXRD. This model system is aiming to improve understanding of the electrolyte materials based on ZrO{sub 2} (e

  18. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  19. Integration of a municipal solid waste gasification plant with solid oxide fuel cell and gas turbine

    DEFF Research Database (Denmark)

    Bellomare, Filippo; Rokni, Masoud

    2013-01-01

    An interesting source of producing energy with low pollutants emission and reduced environmental impact are the biomasses; particularly using Municipal Solid Waste (MSW) as fuel, can be a competitive solution not only to produce energy with negligible costs but also to decrease the storage...... in landfills. A Municipal Solid Waste Gasification Plant Integrated with Solid Oxide Fuel Cell (SOFC) and Gas Turbine (GT) has been studied and the plant is called IGSG (Integrated Gasification SOFC and GT). Gasification plant is fed by MSW to produce syngas by which the anode side of an SOFC is fed wherein...

  20. Multilayered metal oxide thin film gas sensors obtained by conventional and RF plasma-assisted laser ablation

    International Nuclear Information System (INIS)

    Mitu, B.; Marotta, V.; Orlando, S.

    2006-01-01

    Multilayered thin films of In 2 O 3 and SnO 2 have been deposited by conventional and RF plasma-assisted reactive pulsed laser ablation, with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser (λ = 532 nm, τ = 7 ns) on Si(1 0 0) substrates, in O 2 atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported

  1. Solid-state electrochromic cell with anodic iridium oxide film electrodes

    International Nuclear Information System (INIS)

    Dautremont-Smith, W.C.; Beni, G.; Schiavone, L.M.; Shay, J.L.

    1979-01-01

    A new solid-state electrochromic cell has been fabricated using an anodic iridium oxide film (AIROF) display electrode. The cell has the symmetric sandwich structure AIROFvertical-barNafionvertical-barAIROF, with the Nafion solid electrolyte opacified by an in situ precipitation technique. A symmetric square-wave voltage of 1.5 V amplitude produces clearly perceivable color changes from pale to dark blue-gray in approx. =1 sec when viewed in diffuse reflection. Good open-circuit optical memory is exhibited:

  2. Spectroscopic and luminescent properties of Co2+ doped tin oxide thin films by spray pyrolysis

    Directory of Open Access Journals (Sweden)

    K. Durga Venkata Prasad

    2016-07-01

    Full Text Available The wide variety of electronic and chemical properties of metal oxides makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Tin oxide belongs to a class of materials called Transparent Conducting Oxides (TCO which constitutes an important component for optoelectronic applications. Co2+ doped tin oxide thin films were prepared by chemical spray pyrolysis synthesis and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Co2+ ions in the host lattice and the luminescent properties of the prepared sample. Powder XRD data revealed that the crystal structure belongs to tetragonal rutile phase and its lattice cell parameters are evaluated. The average crystallite size was estimated to be 26 nm. The morphology of prepared sample was analyzed by using SEM and TEM studies. Functional groups of the prepared sample were observed in the FT-IR spectrum. Optical absorption and EPR studies have shown that on doping, Co2+ ions enter in the host lattice as octahedral site symmetry. PL studies of Co2+ doped SnO2 thin films exhibit blue and yellow emission bands. CIE chromaticity coordinates were also calculated from emission spectrum of Co2+ doped SnO2 thin films.

  3. Contribution towards ALD and MOCVD of rare earth oxides and hafnium oxide. From precursor evaluation to process development and thin film characterization

    International Nuclear Information System (INIS)

    Xu, Ke

    2013-01-01

    This PhD thesis is consisted of two major parts: precursor development for ALD and MOCVD applications as well as thin film deposition using ALD and MOCVD with self developed precursors. The first part of this work presents the synthesis, characterization and detailed thermal property investigations of different novel group IV and rare earth precursor classes (guandinate, guanidine and ketoiminate). The second part of this work presents the ALD and MOCVD depositions using various guanidinate precursors for forming corresponding metal oxide thin films. The overall motivation of this work is to fulfill the lack of precursors of rare earth and group IV elements for ALD and MOCVD applications that satisfy the stringent requirements for the modern microelectronic and optoelectronic technologies. The aspect of the precursor engineering part is focusing on influence of ligand sphere on precursors' chemical and thermal properties. In this way, we successfully introduced guanidine and ketoiminate as potential ligands for the precursor design. The thin film deposition part of this work is ALD of rare earth oxides and group IV oxides employing literature known compounds which were previously developed in our research group. The main focus was dedicated to the process optimization, the characterization of the structural, morphological, compositional and functional properties of the deposited thin films. Certain film properties were discussed comparatively with the corresponding thin films deposited with literature known precursors. It was already shortly demonstrated in Chapter 6 that the guanidine ligand showed potential interest as suitable ligand for precursor engineering. This titan guanidine precursor [Ti(NC(NMe 2 ) 2 ) 4 ] (GD1) possesses higher thermal stability compared to its parent amide, [Ti(NMe 2 ) 4 ], while reactivity against water is not significantly affected. It could be very interesting to transfer this ligand for the precursor development of rare earth

  4. RBS and NRA of cobalt oxide thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Andrade, E.; Huerta, L.; Pineda, J.C.; Zavala, E.P.; Barrera, E.; Rocha, M. F.; Vargas, C.A.

    2001-01-01

    This work presents a study of cobalt oxide thin films produced by the sol-gel process on aluminum and glass substrates. These films have been analyzed using two ion beam analysis (IBA) techniques: a) a standard RBS 4 He 2 MeV and b) nuclear reaction analysis (NRA) using a 1 MeV deuterium beam. The 12 C(d,p 0 ) 13 C nuclear reaction provides information that carbon is incorporated into the film structure, which could be associated to the sinterization film process. Other film measurements such as optical properties, XRD, and SEM were performed in order to complement the IBA analysis. The results show that cobalt oxide film coatings prepared by this technique have good optical properties as solar absorbers and potential uses in solar energy applications

  5. Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

    International Nuclear Information System (INIS)

    Lin, Jyi-Tsong; Huang, Kuo-Dong; Hu, Shu-Fen

    2008-01-01

    In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P–N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 µm, whereas the conventional TFT suffers serious short channel effects at this gate length

  6. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

    Science.gov (United States)

    Heo, Jae Sang; Jo, Jeong-Wan; Kang, Jingu; Jeong, Chan-Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck-In; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu

    2016-04-27

    The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH IGZO TFTs.

  7. Electrical and structural properties of La0.8Sr0.2Mn0.5Co0.5O3±δ films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, Nini; Christensen, Bo Toftmann; Schou, Jørgen

    2005-01-01

    La0.8Sr0.2Mn0.5Co0.5O3 (LSMCO) films for the use as contact layers or protective coatings in solid oxide fuel cells (SOFC) have been deposited on glass substrates by pulsed laser deposition (PLD). PLD is an obvious technique for thin film production of complex oxides, because of the ability...

  8. Novel quasi-symmetric solid oxide fuel cells with enhanced electrochemical performance

    KAUST Repository

    Chen, Yonghong; Cheng, Zhuanxia; Yang, Yang; Gu, Qingwen; Tian, Dong; Lu, Xiaoyong; Yu, Weili; Lin, Bin

    2016-01-01

    Symmetrical solid oxide fuel cell (SSOFC) using same materials as both anode and cathode simultaneously has gained extensively attentions, which can simplify fabrication process, minimize inter-diffusion between components, enhance sulfur and coking

  9. Magnetoresistance and Microstructure of Magnetite Nanocrystals Dispersed in Indium−Tin Oxide Thin Films

    OpenAIRE

    Okada, Koichi; Kohiki, Shigemi; Mitome, Masanori; Tanaka, Hidekazu; Arai, Masao; Mito, Masaki; Deguchi, Hiroyuki

    2009-01-01

    Epitaxial indium−tin oxide (ITO) thin films were fabricated on a yttria-stabilized zirconia (YSZ) substrate by pulsed-laser deposition using magnetite (Fe3O4) nanoparticle dispersed ITO powders as a target. Magnetoresistance of the film at a field of 1 T was 39% at 45 K, and it stayed at 3% above 225 K. The film demonstrated cooling hysteresis in the temperature dependence of direct-current magnetization. Transmission electron microscopy revealed that phase-separated Fe3O4 nanocrystals with w...

  10. Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Jaiswal, Manoj Kumar [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Kumar, Rajesh, E-mail: rajeshkumaripu@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078 (India)

    2013-11-01

    Thin films of tin(IV) oxide (SnO{sub 2}) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au{sup 8+} using 1 pnA current at normal incidence with ion fluences varying from 1 × 10{sup 11} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV–Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm{sup −1} in FTIR spectrum confirmed the O–Sn–O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO{sub 2} were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

  11. Direct ethanol solid oxide fuel cell operating in gradual internal reforming

    Science.gov (United States)

    Nobrega, S. D.; Galesco, M. V.; Girona, K.; de Florio, D. Z.; Steil, M. C.; Georges, S.; Fonseca, F. C.

    2012-09-01

    An electrolyte supported solid oxide fuel cell (SOFC) using standard electrodes, doped-lanthanum manganite cathode and Ni-cermet anode, was operated with direct (anhydrous) ethanol for more than 100 h, delivering essentially the same power output as running on hydrogen. A ceria-based layer provides the catalytic activity for the gradual internal reforming, which uses the steam formed by the electrochemical oxidation of hydrogen for the decomposition of ethanol. Such a concept opens up the way for multi-fuel SOFCs using standard components and a catalytic layer.

  12. Memristive properties of transparent oxide semiconducting (Ti,Cu)O x -gradient thin film

    Science.gov (United States)

    Domaradzki, Jarosław; Kotwica, Tomasz; Mazur, Michał; Kaczmarek, Danuta; Wojcieszak, Damian

    2018-01-01

    The paper presents the results of the analysis of memristive properties observed in (Ti,Cu)-oxide thin film with gradient distribution of elements, prepared using the multi-source reactive magnetron co-sputtering process. The performed electrical measurements showed the presence of pinched hysteresis loops in the voltage-current plane for direct and alternating current bipolar periodic signal stimulation. Investigations performed using a transmission electron microscope equipped with an energy dispersive spectrometer showed that the elemental composition at the cross section of the thin film was very well correlated with the gradient V-shaped profile of the powering of the magnetron source equipped with a Cu target. The prepared samples were transparent in the visible part of optical radiation. The obtained results showed that the prepared gradient (Ti,Cu)O x thin film could be an interesting alternative to the conventional multilayer stack construction of memristive devices, which makes them a promising material for manufacturing transparent memory devices for transparent electronics.

  13. Plasma-treated Langmuir-Blodgett reduced graphene oxide thin film for applications in biophotovoltaics

    Science.gov (United States)

    Ibrahim, Siti Aisyah; Jaafar, Muhammad Musoddiq; Ng, Fong-Lee; Phang, Siew-Moi; Kumar, G. Ghana; Majid, Wan Haliza Abd; Periasamy, Vengadesh

    2018-01-01

    The surface optimization and structural characteristics of Langmuir-Blodgett (LB) reduced graphene oxide thin (rGO) film treated by argon plasma treatment were studied. In this work, six times deposition of rGO was deposited on a clean glass substrate using the LB method. Plasma technique involving a variation of plasma power, i.e., 20, 60, 100 and 140 W was exposed to the LB-rGO thin films under argon ambience. The plasma treatment generally improves the wettability or hydrophilicity of the film surface compared to without treatment. Maximum wettability was observed at a plasma power of 20 W, while also increasing the adhesion of the rGO film with the glass substrate. The multilayer films fabricated were characterized by means of spectroscopic, structural and electrical studies. The treatment of rGO with argon plasma was found to have improved its biocompatibility, and thus its performance as an electrode for biophotovoltaic devices has been shown to be enhanced considerably.

  14. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu; Grimaud, Alexis; Crumlin, Ethan J.; Mezghani, Khaled; Habib, Mohamed A.; Feng, Zhenxing; Hong, Wesley T.; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

    2013-01-01

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  15. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu

    2013-09-19

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  16. UV absorption by cerium oxide nanoparticles/epoxy composite thin films

    International Nuclear Information System (INIS)

    Dao, Ngoc Nhiem; Luu, Minh Dai; Nguyen, Quang Khuyen; Kim, Byung Sun

    2011-01-01

    Cerium oxide (CeO 2 ) nanoparticles have been used to modify properties of an epoxy matrix in order to improve the ultra-violet (UV) absorption property of epoxy thin films. The interdependence of mechanical properties, UV absorption property and the dispersed concentration of CeO 2 nanoparticles was investigated. Results showed that, by increasing the dispersed concentration of CeO 2 nanoparticles up to 3 wt%, tensile modulus increases while two other mechanical properties, namely tensile strength and elongation, decrease. The UV absorption peak and the absorption edges of the studied thin films were observed in the UV-Vis absorption spectra. By incorporating CeO 2 nanoparticles into the epoxy matrix, an absorption peak appears at around 318 nm in UV-Vis spectra with increasing CeO 2 concentration from 0.1 to 1.0 wt%. Scanning electron microscopy (SEM) images revealed that a good dispersion of nanoparticles in the epoxy matrix by an ultrasonic method was achieved

  17. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  18. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

    2005-12-22

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

  19. The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Deuk-Kyu [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Misra, Mirnmoy; Lee, Ye-Eun [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of); Baek, Sung-Doo [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Lee, Tae Il, E-mail: t2.lee77@gachon.ac.kr [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of)

    2017-05-31

    Highlights: • Indium tin oxide thin film with about 41 nm thickness was obtained by the sol-gel process. • Thin film exhibited low resistivity. • Sheet resistance of thin film decreases with Ar plasma treatment time. • Ar plasma treatment on thin film does not alter the crystal structure and optical properties of the ITO thin-film. • There is no significant change in oxygen vacancies after 20 min of plasma treatment. - Abstract: Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the crystal structure, surface morphology, or optical properties of the ITO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the concentration of oxygen vacancies in the film dramatically increased with the plasma treatment time. Thus, we concluded that the decrease in the sheet resistance was caused by the increase in the oxygen vacancy concentration in the film. Furthermore, to verify how the concentration of oxygen vacancies in the film increased with the Ar plasma treatment time, cumulative and continuous plasma treatments were conducted. The oxygen vacancies were found to be created by surface heating via the outward thermal diffusion of oxygen atoms from inside the film.

  20. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

    2014-01-01

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

  1. Tubular solid oxide fuel cell development program

    Energy Technology Data Exchange (ETDEWEB)

    Ray, E.R.; Cracraft, C.

    1995-12-31

    This paper presents an overview of the Westinghouse Solid Oxide Fuel Cell (SOFC) development activities and current program status. The Westinghouse goal is to develop a cost effective cell that can operate for 50,000 to 100,000 hours. Progress toward this goal will be discussed and test results presented for multiple single cell tests which have now successfully exceeded 56,000 hours of continuous power operation at temperature. Results of development efforts to reduce cost and increase power output of tubular SOFCs are described.

  2. Solid oxide fuel cell field trial evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Wilcox, C.P.; Winstanley, R.; Nietsch, T.; Smith, C.; Knight, R.; Seymore, C.

    2000-07-01

    This report focuses on issues relating to a field trial of a solid oxide fuel cell (SOFC). Aspects examined include markets for SOFC systems, the choice of systems for demonstration in year 2002, the assessment of industrial interest, and evaluation and ranking of candidate systems. The identification and evaluation of interest in field trials, the estimation of the capital and running costs of a field trial, and identification of the benefits to the UK and barriers to implementation of SOFC systems are discussed. (UK)

  3. Identification of a Methane Oxidation Intermediate on Solid Oxide Fuel Cell Anode Surfaces with Fourier Transform Infrared Emission.

    Science.gov (United States)

    Pomfret, Michael B; Steinhurst, Daniel A; Owrutsky, Jeffrey C

    2013-04-18

    Fuel interactions on solid oxide fuel cell (SOFC) anodes are studied with in situ Fourier transform infrared emission spectroscopy (FTIRES). SOFCs are operated at 800 °C with CH4 as a representative hydrocarbon fuel. IR signatures of gas-phase oxidation products, CO2(g) and CO(g), are observed while cells are under load. A broad feature at 2295 cm(-1) is assigned to CO2 adsorbed on Ni as a CH4 oxidation intermediate during cell operation and while carbon deposits are electrochemically oxidized after CH4 operation. Electrochemical control provides confirmation of the assignment of adsorbed CO2. FTIRES has been demonstrated as a viable technique for the identification of fuel oxidation intermediates and products in working SOFCs, allowing for the elucidation of the mechanisms of fuel chemistry.

  4. Graphene Oxide/Poly(3-hexylthiophene) Nanocomposite Thin-Film Phototransistor for Logic Circuit Applications

    Science.gov (United States)

    Mansouri, S.; Coskun, B.; El Mir, L.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed; Yakuphanoglu, F.

    2018-04-01

    Graphene is a sheet-structured material that lacks a forbidden band, being a good candidate for use in radiofrequency applications. We have elaborated graphene-oxide-doped poly(3-hexylthiophene) nanocomposite to increase the interlayer distance and thereby open a large bandgap for use in the field of logic circuits. Graphene oxide/poly(3-hexylthiophene) (GO/P3HT) nanocomposite thin-film transistors (TFTs) were fabricated on silicon oxide substrate by spin coating method. The current-voltage ( I- V) characteristics of TFTs with various P3HT compositions were studied in the dark and under light illumination. The photocurrent, charge carrier mobility, subthreshold voltage, density of interface states, density of occupied states, and I ON/ I OFF ratio of the devices strongly depended on the P3HT weight ratio in the composite. The effects of white-light illumination on the electrical parameters of the transistors were investigated. The results indicated that GO/P3HT nanocomposite thin-film transistors have high potential for use in radiofrequency applications, and their feasibility for use in digital applications has been demonstrated.

  5. Oxygen reduction kinetics and transport properties of (Ba,Sr)(Co,Fe)O3-δ solid oxide fuel cell cathode materials

    International Nuclear Information System (INIS)

    Wang, Lei; Merkle, Rotraut; Baumann, Frank S.; Maier, Joachim; Fleig, Juergen

    2007-01-01

    Full text: The oxygen reduction at the surface of cathode materials is crucial for the performance of solid oxide fuel cells (SOFC), but a detailed understanding of the mechanism is not available yet. (Ba x Sr 1-x )(Co 1-y Fe y )O 3-δ shows strongly improved oxygen reduction rates compared to previously applied perovskite cathode materials. In this work, surface rate constants as well as bulk transport properties are studied. (Ba x Sr 1-x )(Co 1-y Fe y )O 3-δ with 0≤x≤0.5, 0.2≤y≤1 was synthesized by the Pechini method. Oxygen stoichoimetry was obtained from thermo-gravimetric analysis, confirming that Ba 0.5 Sr 0.5 Co 0.8 Fe 0.2 O 3-δ has an exceptionally low oxygen content which is generally smaller than 2.5. Dense thin films were grown by pulsed laser deposition (PLD) and patterned into circular microelectrodes by photolithography. The surface resistance R s , which dominate the overall electrode resistance, were measured by impedance spectroscopy on individual microelectrodes at different T, pO 2 and applied electrical bias. PLD technique greatly helps to study the oxygen reduction kinetics since only measurements on dense thin films allow to record absolute R s values without interference from morphology effects. These R s values were found to be much lower than those for (La,Sr)(Co,Fe)O 3-δ . The variation of the surface reaction rates with A-site and B-site composition was studied and correlations with bulk materials properties such as oxygen nonstoichiometry, ionic mobility or oxidation enthalpy were examined. Plausible reaction mechanisms as well as possible reasons for the high absolute surface reaction rates will be discussed

  6. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  7. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    KAUST Repository

    Sarath Kumar, S. R.

    2012-02-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  8. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    KAUST Repository

    Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2012-01-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  9. Characterization of thin CeO{sub 2} films electrochemically deposited on HOPG

    Energy Technology Data Exchange (ETDEWEB)

    Faisal, Firas [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Toghan, Arafat, E-mail: arafat.toghan@yahoo.com [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Chemistry Department, Faculty of Science, South Valley University, 83523 Qena (Egypt); Khalakhan, Ivan; Vorokhta, Mykhailo; Matolin, Vladimír [Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 747/2, 180 00 Prague 8 (Czech Republic); Libuda, Jörg [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Erlangen Catalysis Resource Center, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany)

    2015-09-30

    Graphical abstract: - Highlights: • Preparation of proton exchange membrane fuel cells catalyst using electrochemical thin film deposition. • Electrodeposition thin films of CeO{sub 2} on HOPG substrates. • The samples were characterized by in-situ AFM and ex-situ XPS. • XPS results reveal that the electrochemically deposited cerium oxide films are stoichiometric. • Exposing the films to ambient air, cracking structures are formed. - Abstract: Electrodeposition is widely used for industrial applications to deposit thin films, coatings, and adhesion layers. Herein, CeO{sub 2} thin films were deposited on a highly oriented pyrolytic graphite (HOPG) substrate by cathodic electrodeposition. The influence of the deposition parameters on the yield and on the film morphology is studied and discussed. Morphology and composition of the electrodeposited films were characterized by in-situ atomic force microscopy (AFM), scanning electron microscopy (SEM), Energy Dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). By AFM we show that the thickness of CeO{sub 2} films can be controlled via the Ce{sup 3+} concentration in solution and the deposition time. After exposing the films to ambient air, cracking structures are formed, which were analyzed by AFM in detail. The chemical composition of the deposits was analyzed by XPS indicating the formation of nearly stoichiometric CeO{sub 2}.

  10. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors.

    Science.gov (United States)

    Xu, Wangying; Li, Hao; Xu, Jian-Bin; Wang, Lei

    2018-03-06

    Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This review surveys the recent advances in solution-based oxide TFTs, including n-type oxide semiconductors, oxide dielectrics and p-type oxide semiconductors. Firstly, we provide an introduction on oxide TFTs and the TFT configurations and operating principles. Secondly, we present the recent progress in solution-processed n-type transistors, with a special focus on low-temperature and large-area solution processed approaches as well as novel non-display applications. Thirdly, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-voltage electronics. Fourthly, we discuss the recent progress in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw the conclusions and outline the perspectives over the research field.

  11. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of)

    2011-09-15

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/{mu}c-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of {theta}{sub i} = 0 (normal sputtering) and {theta}{sub i} = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at {theta}{sub i} = 80 show the inclined columnar nanostructures compared to those at {theta}{sub i} = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/{mu}c-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of {proportional_to}1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at {theta}{sub i} = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Preparation and impedance characterization of all-solid-state thin film battery systems

    OpenAIRE

    Schichtel, Patrick

    2018-01-01

    In this thesis the behavior and properties of solid-state batteries based on multiple electrodes are analysed. For this purpose thin film systems of the relevant materials are prepared to achieve model system for more detailed analysis of the material specific properties. The characterisation of the systems is carried out with typical physical and electrochemical methods and especially using impedance spectroscopy. The first material analysed in this thesis is Li4Ti5O12 which was recognize...

  13. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  14. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  15. Growth and surface modification of LaFeO3 thin films induced by reductive annealing

    International Nuclear Information System (INIS)

    Flynn, Brendan T.; Zhang, Kelvin H.L.; Shutthanandan, Vaithiyalingam; Varga, Tamas; Colby, Robert J.; Oleksak, Richard P.; Manandhar, Sandeep; Engelhard, Mark H.; Chambers, Scott A.; Henderson, Michael A.; Herman, Gregory S.; Thevuthasan, Suntharampillai

    2015-01-01

    Highlights: • LaFeO 3 was grown by molecular beam epitaxy on ZrO 2 :Y 2 O 3 . • The film was highly oriented but not single crystalline. • Angle resolved XPS revealed differences between surface and bulk oxygen. • Annealing the film in vacuum resulted in the sequential reduction of Fe cations. • A greater d