Luminescent properties of CaTiO3:Pr thin-film phosphor deposited on ZnO/ITO/glass substrate

International Nuclear Information System (INIS)

Chung, Sung Mook; Han, Sang Hyuk; Song, Kuk Hyun; Kim, Eung Soo; Kim, Young Jin

2005-01-01

Red-emitting CaTiO 3 :Pr phosphor thin films were deposited on glass, ZnO/ITO/glass, and ITO/glass substrates by RF magnetron sputtering. The effects of various substrates and heat treatment on the structural and luminous properties were investigated. The films deposited on ZnO/ITO/glass exhibited superior crystallinity and more enhanced PL and CL properties compared with those on ITO/glass. The intermediate ZnO layer between phosphor film and ITO contributed to the growing behaviors and the roughening of CaTiO 3 :Pr phosphor thin films, and consequently, to the excellent luminescence. The luminescent properties of the films were improved by following heat-treatment due to a combination of factors, namely the transformation from amorphous to poly crystalline phases, the activation of the activators, and the elimination of microdefects

Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency

International Nuclear Information System (INIS)

Ilyas, Usman; Rawat, R.S.; Roshan, G.; Tan, T.L.; Lee, P.; Springham, S.V.; Zhang, Sam; Fengji Li; Chen, R.; Sun, H.D.

2011-01-01

The structural and photoluminescence analyses were performed on un-doped and Mn doped ZnO thin films grown on Si (1 0 0) substrate by pulsed laser deposition (PLD) and annealed at different post-deposition temperatures (500-800 deg. C). X-ray diffraction (XRD), employed to study the structural properties, showed an improved crystallinity at elevated temperatures with a consistent decrease in the lattice parameter 'c'. The peak broadening in XRD spectra and the presence of Mn 2p3/2 peak at ∼640 eV in X-ray Photoelectron Spectroscopic (XPS) spectra of the doped thin films confirmed the successful incorporation of Mn in ZnO host matrix. Extended near band edge emission (NBE) spectra indicated the reduction in the concentration of the intrinsic surface traps in comparison to the doped ones resulting in improved optical transparency. Reduced deep level emission (DLE) spectra in doped thin films with declined PL ratio validated the quenching of the intrinsic surface traps thereby improving the optical transparency and the band gap, essential for optoelectronic and spintronic applications. Furthermore, the formation and uniform distribution of nano-sized grains with improved surface features of Mn-doped ZnO thin films were observed in Field Emission Scanning Electron Microscopy (FESEM) images.

Effect of Mn content on structural, optical, opto-thermal and electrical properties of ZnO:Mn sprayed thin films compounds

International Nuclear Information System (INIS)

Mimouni, R.; Kamoun, O.; Yumak, A.; Mhamdi, A.; Boubaker, K.; Petkova, P.; Amlouk, M.

2015-01-01

Highlights: • Proposing an original explanation to the difference between manganese-doped zinc oxide and undoped behavior. • Presenting an original effective electrical and fluorescence-related calculation scheme. • Outlining original AC–DC investigation protocol. - Abstract: Manganese-doped zinc oxide thin films (ZnO:Mn) at different percentages (0–3%) were deposited on glass substrates using a chemical spray technique. The effects of manganese element content on structural, optical, opto-thermal and electrical conductivity of ZnO:Mn thin films were investigated by means of X-ray diffraction, optical measurement, Photoluminescence spectroscopy and impedance spectroscopy. XRD analysis revealed that all films consist of single phase ZnO and were well crystallized in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel to c-axis. Doping manganese resulted in a slight decrease in the optical band gap energy of the films and a noticeably change in optical constants. The UV peak positions for ZnO:Mn samples slightly red shift to the longer wavelength in comparison with the pure ZnO which can be attributed to the change in the acceptor level induced by the substitutional Mn 2+ and the band-gap narrowing of ZnO with the Mn dopant. We have performed original AC and DC conductivity studies inspired from Jonscher and small polaron models. These studies helped establishing significant correlation between temperature and activation energy and Mn content. From the spectroscopy impedance analysis we investigated the frequency relaxation phenomenon and the circuit equivalent circuit of such thin films. Finally, all results have been discussed, as an objective of the actual work, in terms of the manganese doping concentration

Phosphorescence behavior and photoluminescence mechanism of Dy{sup 3+} sensitized β-Zn{sub 3}(PO{sub 4}){sub 2}: Mn{sup 2+} phosphor

Energy Technology Data Exchange (ETDEWEB)

Xie, Ting; Guo, Hongxu [School of Chemistry & Environment, Minnan Normal University, Zhangzhou 363000, Fujian (China); Zhang, Junying [Department of Physics, Beihang University, Beijing 100191 (China); Odetola, Christopher [Department of Chemistry, University of Ontario Institute of Technology, Ontario L1H 7K4 (Canada); He, Yuneng; Lin, Heng; Chen, Guoliang [School of Chemistry & Environment, Minnan Normal University, Zhangzhou 363000, Fujian (China); Zheng, Zishan, E-mail: Z.Zheng@mnnu.edu.cn [School of Chemistry & Environment, Minnan Normal University, Zhangzhou 363000, Fujian (China)

2015-09-05

Highlights: • A red long persistent phosphor of β-Zn{sub 3}(PO{sub 4}){sub 2}: Mn{sup 2+}, Dy{sup 3+} was synthesized. • Dy{sup 3+} as a sensitizer transfers its energy to the luminescent center of Mn{sup 2+}. • The three factors are responsible for the improvement of LPP properties. - Abstract: A red long persistent phosphor (LPP) of β-Zn{sub 3}(PO{sub 4}){sub 2}: Mn{sup 2+}, Dy{sup 3+} was synthesized conventionally via homogeneous coprecipitation and conventional solid-state sintering methods. The emission peak of phosphor was found at 620 nm, which can be assigned to the {sup 4}T{sub 1g} → {sup 6}A{sub 1g} transition of Mn{sup 2+}. The decay curves of phosphors show that Dy{sup 3+} ions co-doping can largely improve the performance of the red LLP of β-Zn{sub 3}(PO{sub 4}){sub 2}: Mn{sup 2+}. This red long-persistent luminescence was observed for about 4 h in the limit of light perception for naked eyes when excited under 254 nm UV light for 5 min. Thermoluminescence analysis indicates that the dopant of Dy{sup 3+} ions produced suitable trap depth of defects that enhanced the luminescence of LPP. It is hypothesized that Dy{sup 3+} as a sensitizer transfers its energy to the luminescent center of Mn{sup 2+}. We propose that the emission mechanism of LPP experiences a series process of electron–hole pairs: production, release, movement and combination. The decay time of LPP has close relationship with the life span of electron–hole pairs during their releasing time from traps and moving length on their path.

Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

Thermally stimulated properties in ZnSe:Tb and ZnSe:(Mn, Tb) phosphors

Science.gov (United States)

Mishra, A. K.; Mishra, S. K.; Pandey, S. P.; Lakshmi Mishra, Kshama

2018-02-01

Thermoluminescence studies were performed of ZnSe:Tb and ZnSe:(Mn, Tb) phosphors. A method of preparation for ZnSe phosphors doped with Tb and (Mn, Tb) has been discussed. The thermoluminescence (TL) properties of these phosphors have been studied from 100 to 370 K temperature after exciting by UV radiation (365 nm) at three uniform heating rates 0.4, 0.6 and 0.9 K/s. The trapping parameters like trap depth, lifetime of electrons and capture cross-section have also been determined using various methods.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

A Novel Synthetic Route for Green-emitting Zn{sub 2-x}Mn{sub x}SiO{sub 4} Phosphor using Colloidal Silica

Energy Technology Data Exchange (ETDEWEB)

Kang, Seong Gu [Hoseo University, Asan (Korea, Republic of); Park, Jung Chul [Silla University, Busan (Korea, Republic of)

2010-11-15

We have synthesized Mn-doped Zn{sub 2}SiO{sub 4} phosphors by solgel method using colloidal silica. The adsorption characteristics of the citric acid molecules onto the silica surfaces enables us to use colloidal silica as a Si-source instead of TEOS which is generally utilized for the fine particle synthesis of the silicate based compounds. At a very low temperature (800 .deg. C), we could obtain the single phase of Zn{sub 2}SiO{sub 4}, which is remarkable compared to that of the solid state reaction (about 1300 .deg. C). The mean size of particles prepared at 800 .deg. C, 900 .deg. C, and 1000 .deg. C is 100 nm, 200 nm, and 400 nm, respectively. The PL intensity of Zn{sub 1.92}Mn{sub 0.08}SiO{sub 4} prepared at different temperature between 800 .deg. C and 1200 .deg. C, increases as the synthetic temperature rises up. Moreover, the PL intensity of Zn{sub 1.92}Mn{sub 0.08}SiO{sub 4} prepared at 1200 .deg. C is remarkable compared to that of the commercial Zn{sub 2}SiO{sub 4} : Mn (Kasei company, Japan). The PL intensity for Zn{sub 1.92}Mn{sub 0.08}SiO{sub 4} as a function of colloidal silica content, do not induces a considerable change in PL intensity, but a considerable modification in the morphology of particles. It might be said that colloidal silica is a promising chemical as a Si-source for the synthesis of fine particle of silicate compounds, instead of TEOS. The Mn{sup 2+}-doped Zn{sub 2}SiO{sub 4} phosphor has been used as a luminescent material for lamp and plasma panel display because of its high-luminescent efficiency and chemical stability. The emission of the Zn{sub 2-x}Mn{sub x}SiO{sub 4} at 520 nm is attributed to d-level spin-forbidden transition for Mn(II). According to the earlier literatures, the photoluminescence (PL) process of Zn{sub 2-x}Mn{sub x}SiO{sub 4} phosphors has been characterized by the transition of 3d{sup 5} electrons in the manganese ion acting as an activation center in the willemite structure. In particular, the transition

Characterization of nanostructures of ZnO and ZnMnO films deposited by successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Jimenez-Garcia, F.N. [Departamento de Fisica y Matematicas, Universidad Autonoma de Manizales, Antigua Estacion del Ferrocarril, Manizales, Caldas (Colombia); Departamento de Fisica y Quimica, Universidad Nacional de Colombia, Sede Manizales, Campus la Nubia, Manizales, Caldas (Colombia); Espinosa-Arbelaez, D.G. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico); Posgrado en Ciencia e Ingenieria Materiales, Instituto de Investigacion en Materiales, Universidad Nacional Autonoma de Mexico, Mexico DF (Mexico); Vargas-Hernandez, C. [Departamento de Fisica y Quimica, Universidad Nacional de Colombia, Sede Manizales, Campus la Nubia, Manizales, Caldas (Colombia); Real, A. del [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico); Rodriguez-Garcia, M.E., E-mail: marioga@fata.unam.mx [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico)

2011-09-01

ZnO and ZnMnO thin films were obtained by the successive ionic layer adsorption and reaction (SILAR) method. All thin films were deposited on glass microscope slide. A precursor solution of 0.1 M of ZnCl{sub 2} complexed with ammonium hydroxide and water close to boiling point (92 deg. C) as a second solution was used for the ZnO films. An uncomplexed bath comprised of 0.1 M ZnCl{sub 2}, 0.1 M MnCl{sub 2,} and a second solution of 0.1 ml of NH{sub 4}OH with water close to boiling point was used for the ZnMnO films. The film samples were deposited by the SILAR method and annealed at 200 deg. C for 15 min. These samples were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy with Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscope. Atomic absorption was used to determine quantitatively the amount of Mn incorporated into the films. According to the XRD patterns these films were polycrystalline with wurtzite hexagonal structure. The morphology of the ZnO films constituted by rice-like and flower-like structures changed significantly to nanosheet structures with the Mn incorporation. The Mn inclusion in a ZnO structure was less than 4% according to the results from EDS, XRD, and atomic absorption.

Characterization of nanostructures of ZnO and ZnMnO films deposited by successive ionic layer adsorption and reaction method

International Nuclear Information System (INIS)

Jimenez-Garcia, F.N.; Espinosa-Arbelaez, D.G.; Vargas-Hernandez, C.; Real, A. del; Rodriguez-Garcia, M.E.

2011-01-01

ZnO and ZnMnO thin films were obtained by the successive ionic layer adsorption and reaction (SILAR) method. All thin films were deposited on glass microscope slide. A precursor solution of 0.1 M of ZnCl 2 complexed with ammonium hydroxide and water close to boiling point (92 deg. C) as a second solution was used for the ZnO films. An uncomplexed bath comprised of 0.1 M ZnCl 2 , 0.1 M MnCl 2, and a second solution of 0.1 ml of NH 4 OH with water close to boiling point was used for the ZnMnO films. The film samples were deposited by the SILAR method and annealed at 200 deg. C for 15 min. These samples were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy with Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscope. Atomic absorption was used to determine quantitatively the amount of Mn incorporated into the films. According to the XRD patterns these films were polycrystalline with wurtzite hexagonal structure. The morphology of the ZnO films constituted by rice-like and flower-like structures changed significantly to nanosheet structures with the Mn incorporation. The Mn inclusion in a ZnO structure was less than 4% according to the results from EDS, XRD, and atomic absorption.

Improved electrochemical performances of oxygen plasma treated LiMn2O4 thin films

International Nuclear Information System (INIS)

Chen, C C; Chiu, K-F; Lin, K M; Lin, H C; Yang, C-R; Wang, F M

2007-01-01

LiMn 2 O 4 spinel thin films were deposited by radio frequency (rf) magnetron sputtering followed by annealing at 600 0 C in air.The films were then post-treated with an rf driven oxygen plasma. The crystallization and surface morphology of LiMn 2 O 4 thin films were seen to change with rf power. The treated samples were tested under harsh conditions such as deep discharge to 1.5 V and cycling at elevated temperature of 60 0 C to verify the electrochemical performances of LiMn 2 O 4 cathodes. The oxygen plasma treatments improved the electrochemical properties of LiMn 2 O 4 thin films significantly. As the cells were cycled in the range of 4.5-2.0 V at 60 0 C, the samples treated at a proper rf power of 50 W exhibited an initial capacity greater than ∼400 mAh g -1 with reasonable cycling stability. The results were attributed to the change of morphology and the formation of a surface layer induced by the oxygen plasma irradiation

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

Energy Technology Data Exchange (ETDEWEB)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Harish Kumar [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Katiyar, R S [Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343 (Puerto Rico); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2007-10-07

We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm{sup -1}. The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A{sub 1} (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries.

Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

International Nuclear Information System (INIS)

Yadav, Harish Kumar; Sreenivas, K; Katiyar, R S; Gupta, Vinay

2007-01-01

We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm -1 . The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A 1 (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries

Electrodeposited Cu2ZnSnS4 thin films

CSIR Research Space (South Africa)

Valdes, M

2014-05-01

Full Text Available Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic...

Magnetization of correlated electron systems. MnSi thin films, CrB2 single crystals and two-dimensional electron systems in MgZnO/ZnO

International Nuclear Information System (INIS)

Brasse, Matthias

2014-01-01

Torque magnetometry at low temperature is performed to investigate the magnetic properties of MnSi thin films, of a CrB 2 single crystal and of a two-dimensional electron system (2DESs) formed at the interface of MgZnO/ZnO. The magnetic anisotropy and phase diagram of MnSi as well as information on the electronic structure of CrB 2 are obtained. The MgZnO/ZnO 2DESs exhibits the de Haas-van Alphen effect and non-equilibrium currents which are analyzed in order to determine ground state properties and excited states, respectively.

Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

KAUST Repository

Baras, Abdulaziz

2011-07-01

Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

Controlled synthesis and relationship between luminescent properties and shape/crystal structure of Zn2SiO4:MN2+ phosphor

International Nuclear Information System (INIS)

Wan Junxi; Wang Zhenghua; Chen Xiangying; Mu Li; Yu Weichao; Qian Yitai

2006-01-01

Mn-doped Zn 2 SiO 4 phosphors with different morphology and crystal structure, which show different luminescence and photoluminescence intensity, were synthesized via a low-temperature hydrothermal route without further calcining treatment. As-synthesized zinc silicate nanostructures show green or yellow luminescence depending on their different crystal structure obtained under different preparation conditions. The yellow peak occurring at 575 nm comes from the β-phase zinc silicate, while the green peak centering at 525 nm results from the usual α-phase zinc silicate. From photoluminescence spectra, it is found that Zn 2 SiO 4 nanorods have higher photoluminescence intensity than Zn 2 SiO 4 nanoparticles. It can be ascribed to reduced surface-damaged region and high crystallinity of nanorods

White LED based on CaAl2Si2O8:Eu2+ Mn2+ phosphor and CdS/ZnS quantum dots

Science.gov (United States)

Shen, Changyu; Zhong, Chuan; Hou, Qianglong; Li, Ke

2011-02-01

Core/shell CdS/ZnS quantum dots (QDs) with the emission wavelength of 610nm, was synthesized by thermal deposition using cadmium oxide and selenium as precursors in a hot lauric acid and hexadecylamine trioctylphosphine oxide hybrid. CaAl2Si2O8:Eu2+ Mn2+ phosphor was synthesized by high-temperature solid state reaction at 1290 °C for 2 hours under the H2 reducing atmosphere, and X-ray powder diffraction analysis confirmed the formation of it. It has two emission bands peaking at 420 nm and 580nm originated from the transition 5d to 4f of Eu2+ and 4T1-6A1 of Mn2+, respectively. Blends of CaAl2Si2O8:Eu2+,Mn2+ phosphor and CdS/ZnS QDs exhibited the prominent spectral evolution with an increasing content of QDs. A hybrid white LED, which combines a blue LED with the blend of CaAl2Si2O8:Eu2+ Mn2+ phosphor and QDs with a weight ratio of 2:1, with the CIE coordinate of (0.3183, 0.3036) and CRI of 85 was obtained.

Nanocrystalline LiMn2O4 thin film cathode material prepared by polymer spray pyrolysis method for Li-ion battery

International Nuclear Information System (INIS)

Karthick, S.N.; Richard Prabhu Gnanakan, S.; Subramania, A.; Kim, Hee-Je

2010-01-01

Nanocrystalline cubic spinel lithium manganese oxide thin film was prepared by a polymer spray pyrolysis method using lithium acetate and manganese acetate precursor solution and polyethylene glycol-4000 as a polymeric binder. The substrate temperature was selected from the thermogravimetric analysis by finding the complete crystallization temperature of LiMn 2 O 4 precursor sample. The deposited LiMn 2 O 4 thin films were annealed at 450, 500 and 600 o C for 30 min. The thin film annealed at 600 o C was found to be the sufficient temperature to form high phase pure nanocrystalline LiMn 2 O 4 thin film. The formation of cubic spinel thin film was confirmed by X-ray diffraction study. Scanning electron microscopy and atomic force microscopy analysis revealed that the thin film annealed at 600 o C was found to be nanocrystalline in nature and the surface of the films were uniform without any crack. The electrochemical charge/discharge studies of the prepared LiMn 2 O 4 film was found to be better compared to the conventional spray pyrolysed thin film material.

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

2012-07-15

Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

Science.gov (United States)

Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

2016-08-01

We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

Structure and cation distribution of (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001)

Science.gov (United States)

Welke, M.; Brachwitz, K.; Lorenz, M.; Grundmann, M.; Schindler, K.-M.; Chassé, A.; Denecke, R.

2017-06-01

A comprehensive study on growth of ferrimagnetic manganese zinc ferrite (Mn0.5Zn0.5Fe2O4) films on single crystalline strontium titanate(001) (SrTiO3) substrates was carried out. Under the optimized conditions, a thin film with a layer thickness of 200 nm was deposited, and the structural properties were investigated. Contrary to data published in literature, no buffer layer was necessary to achieve epitaxial growth of a poorly lattice-matched layer. This was confirmed for Mn0.5Zn0.5Fe2O4(001) on SrTiO3(001) by x-ray diffraction and the adjoined phi scans, which also revealed a lattice compression of 1.2% of the manganese zinc ferrite film in the out-of-plane direction. Using x-ray photoelectron spectroscopy, the near surface stoichiometry of the film could be shown to agree with the intended one within the uncertainty of the method. X-ray absorption spectroscopy showed an electronic structure close to that published for bulk samples. Additional x-ray magnetic circular dichroism investigations were performed to answer detailed structural questions by a comparison of experimental data with the calculated ones. The calculations took into account ion sites (tetrahedral vs. octahedral coordination) as well as the charge of Fe ions (Fe2+ vs. Fe3+). Contrary to the expectation for a perfect normal spinel that only Fe3+ ions are present in octahedral sites, hints regarding the presence of additional Fe2+ in octahedral sites as well as Fe3+ ions in tetrahedral sites have been obtained. Altogether, the layer could be shown to be mostly in a normal spinel configuration.

Design Of A Bi-Functional α-Fe2O3/Zn2SiO4:Mn2+ By Layer-By-Layer Assembly Method

Directory of Open Access Journals (Sweden)

Yu Ri

2015-06-01

Full Text Available This work describes the design of bi-functional α-Fe2O3/Zn2SiO4:Mn2+ using a two-step coating process. We propose a combination of pigments (α-Fe2O3 and phosphor (Zn2SiO4:Mn2+ glaze which is assembled using a layer-by-layer method. A silica-coated α-Fe2O3 pigment was obtained by a sol-gel method and a Zn2+ precursor was then added to the silica-coated α-Fe2O3 to create a ZnO layer. Finally, the Zn2SiO4:Mn2+ layer was prepared with the addition of Mn2+ ions to serve as a phosphor precursor in the multi-coated α-Fe2O3, followed by annealing at a temperature above 1000°C. Details of the phase structure, color and optical properties of the multi-functional α-Fe2O3/Zn2SiO4:Mn2+ were characterized by transmission electron microscopy and X-ray diffraction analyses.

Reactive pulsed laser deposition of Cu2ZnSnS4 thin films in H2S

International Nuclear Information System (INIS)

Surgina, G.D.; Zenkevich, A.V.; Sipaylo, I.P.; Nevolin, V.N.; Drube, W.; Teterin, P.E.; Minnekaev, M.N.

2013-01-01

Cu 2 ZnSnS 4 (CZTS) thin films have been grown by reactive pulsed laser deposition in H 2 S atmosphere, combining the alternate ablation from the metallic (Cu) and alloyed (Zn x Sn) targets at room temperature. The morphological, structural and optical properties of as grown CZTS thin films with varying compositions as well as upon annealing in N 2 atmosphere are investigated by Rutherford backscattering spectrometry, X-ray diffraction, Raman spectroscopy and optical spectrophotometry. The chemical bonding in the “bulk” of the CZTS films is elucidated via hard X-ray photoemission spectroscopy measurements. The formation of the good quality stoichiometric polycrystalline CZTS films is demonstrated upon optimization of the growth parameters. - Highlights: ► The new method of Cu 2 ZnSnS 4 (CZTS) thin films growth in H 2 S was realized. ► CZTS films were grown by pulsed laser deposition from Cu and alloyed Zn–Sn targets. ► The effect of the processing parameters on the CZTS properties was investigated. ► The chemical bonding in the “bulk” of CZTS films was studied

Photoluminescence and phosphorescence properties of Sr1-xZn2-y(PO4)2:Eux2+,Mny2+ phosphor for UV-based white-LEDs

International Nuclear Information System (INIS)

Jeong, Junho; Jayasimhadri, M.; Sueb Lee, Ho; Jang, Kiwan; Soo Yi, Soung; Hyun Jeong, Jung; Kim, Changdae

2009-01-01

Sr 1-x Zn 2-y (PO 4 ) 2 :Eu x 2+ ,Mn y 2+ (SZP: Eu x 2+ ,Mn y 2+ ) phosphors (x=0, 0.01 and y=0, 0.01) were prepared by using a stoichiometric solid-state reaction method and their photoluminescence and phosphorescence decay properties were investigated. The emission spectrum of SrZn 2 (PO 4 ) 2 :Eu 0.01 2+ , Mn 0.01 2+ measured under 400 nm excitation was composed of the violettish blue and the emerald green emissioins centered at 421 and 547 nm, respectively. The excitation wavelength of the emission peak at 547 nm was about 421 nm in the excitation spectrum of SZP:Mn 0.01 2+ . Since, this value is equal to the transition energy of Eu 2+ , the energy transfer from Eu 2+ to Mn 2+ in SZP:Eu 0.01 2+ ,Mn 0.01 2+ phosphor has been demonstrated. The CIE chromaticity coordinates of SZP:Eu 0.01 2+ ,Mn 0.01 2+ phosphor were (0.330, 0.328) under the excitation wavelength 375 nm at room temperature. The phosphorescence from SZP:Eu 0.01 2+ ,Mn 0.01 2+ could be seen by naked eyes for few seconds and it has persisted for about 4.4 h while monitoring by using a PMT spectrometer. Therefore, SZP:Eu x 2+ ,Mn y 2+ phosphor may be a potential candidate for the UV-based white light-emitting diodes (LEDs).

Cu2ZnSnS4 thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

International Nuclear Information System (INIS)

Caballero, R.; Izquierdo-Roca, V.; Merino, J.M.; Friedrich, E.J.; Climent-Font, A.; Saucedo, E.; 2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" >Pérez-Rodríguez, A.; León, M.

2013-01-01

A study of Cu 2 ZnSnS 4 thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu 2 ZnSnS 4 bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu 2 ZnSnS 4 deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu 2 ZnSnS 4 (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells

Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

Science.gov (United States)

Riascos, H.; Duque, J. S.; Orozco, S.

2017-01-01

ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

Defect luminescence and lattice strain in Mn{sup 2+} doped ZnGa{sub 2}O{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Somasundaram, K.; Abhilash, K.P. [Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi, 642001 Coimbatore (India); Sudarsan, V., E-mail: vsudar@barc.gov.in [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Christopher Selvin, P., E-mail: pcsphyngmc@rediffmail.com [Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi, 642001 Coimbatore (India); Kadam, R.M. [Radiochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2016-06-15

Undoped and Mn{sup 2+} doped ZnGa{sub 2}O{sub 4} phosphors were prepared by solution combustion method and characterized by XRD, SEM, luminescence and electron paramagnetic resonance (EPR) techniques. Based on XRD results, it is inferred that, strain in ZnGa{sub 2}O{sub 4} host lattice increases with incorporation of Mn{sup 2+} ions in the lattice. Mn{sup 2+} doping at concentration levels investigated, lead to significant reduction in the defect emission and this has been attributed to the formation of higher oxidation states of Mn ions in the lattice. Electron Paramagnetic Resonance studies confirmed that majority of Mn ions exist as Mn{sup 2+} species and they occupy tetrahedral Zn{sup 2+} site in ZnGa{sub 2}O{sub 4} lattice with an average hyperfine coupling constant, A{sub iso}∼82 G.

Inhomogeneous distribution of manganese atoms in ferromagnetic ZnSnAs{sub 2}:Mn thin films on InP revealed by three-dimensional atom probe investigation

Energy Technology Data Exchange (ETDEWEB)

Uchitomi, Naotaka, E-mail: uchitomi@nagaokaut.ac.jp; Inoue, Hiroaki; Kato, Takahiro; Toyota, Hideyuki [Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka 940-2188 (Japan); Uchida, Hiroshi [Toshiba Nanoanalysis Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)

2015-05-07

Atomic-scale Mn distributions in ferromagnetic ZnSnAs{sub 2}:Mn thin films grown on InP substrates have been studied by applying three-dimensional atom probe (3DAP) microscopy. It is found that Mn atoms in cross-sectional 3DAP maps show the presence of inhomogeneities in Mn distribution, which is characteristic patterns of a spinoidal decomposition phase with slightly high and low concentration regions. The high Mn concentration regions are expected to be coherently clustered MnAs in the zinc-blende structure, resulting in the formation of Mn-As random connecting patterns. The origin of room-temperature ferromagnetism in ZnSnAs{sub 2}:Mn on InP can be well explained by the formation of atomic-scale magnetic clustering by spinoidal decomposition without breaking the continuity of the zinc-blende structure, which has been suggested by previous theoretical works. The lattice-matching between magnetic epi-layers and substrates should be one of the most important factors to avoid the formation of secondary hexagonal MnAs phase precipitates in preparing ferromagnetic semiconductor thin films.

Photoluminescence and phosphorescence properties of Sr{sub 1-x}Zn{sub 2-y}(PO{sub 4}){sub 2}:Eu{sub x}{sup 2+},Mn{sub y}{sup 2+} phosphor for UV-based white-LEDs

Energy Technology Data Exchange (ETDEWEB)

Jeong, Junho; Jayasimhadri, M. [Research Institute of Basic Science, Changwon National University, Changwon 641-773 (Korea, Republic of); Sueb Lee, Ho [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.k [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Soo Yi, Soung [Department of Photonics, Silla University, Pusan 617-736 (Korea, Republic of); Hyun Jeong, Jung [Department of Physics, Pukyong National University, Pusan 608-737 (Korea, Republic of); Kim, Changdae [Department of Physics, Mokpo National University, Mokpo 534-729 (Korea, Republic of)

2009-07-01

Sr{sub 1-x}Zn{sub 2-y}(PO{sub 4}){sub 2}:Eu{sub x}{sup 2+},Mn{sub y}{sup 2+} (SZP: Eu{sub x}{sup 2+},Mn{sub y}{sup 2+}) phosphors (x=0, 0.01 and y=0, 0.01) were prepared by using a stoichiometric solid-state reaction method and their photoluminescence and phosphorescence decay properties were investigated. The emission spectrum of SrZn{sub 2}(PO{sub 4}){sub 2}:Eu{sub 0.01}{sup 2+}, Mn{sub 0.01}{sup 2+} measured under 400 nm excitation was composed of the violettish blue and the emerald green emissioins centered at 421 and 547 nm, respectively. The excitation wavelength of the emission peak at 547 nm was about 421 nm in the excitation spectrum of SZP:Mn{sub 0.01}{sup 2+}. Since, this value is equal to the transition energy of Eu{sup 2+}, the energy transfer from Eu{sup 2+} to Mn{sup 2+} in SZP:Eu{sub 0.01}{sup 2+},Mn{sub 0.01}{sup 2+} phosphor has been demonstrated. The CIE chromaticity coordinates of SZP:Eu{sub 0.01}{sup 2+},Mn{sub 0.01}{sup 2+} phosphor were (0.330, 0.328) under the excitation wavelength 375 nm at room temperature. The phosphorescence from SZP:Eu{sub 0.01}{sup 2+},Mn{sub 0.01}{sup 2+} could be seen by naked eyes for few seconds and it has persisted for about 4.4 h while monitoring by using a PMT spectrometer. Therefore, SZP:Eu{sub x}{sup 2+},Mn{sub y}{sup 2+}phosphor may be a potential candidate for the UV-based white light-emitting diodes (LEDs).

Enhanced persistent red luminescence in Mn2+-doped (Mg,Zn)GeO3 by electron trap and conduction band engineering

Science.gov (United States)

Katayama, Yumiko; Kayumi, Tomohiro; Ueda, Jumpei; Tanabe, Setsuhisa

2018-05-01

The effect of Zn substitution on the persistent luminescence properties of MgGeO3:Mn2+-Ln3+ (Ln = Eu and Yb) red phosphors was investigated. The intensity of the persistent luminescence of the Eu3+ co-doped phosphors increased with increasing Zn content, whereas that of the Yb3+ co-doped samples decreased. For both series of lanthanide co-doped samples, the thermoluminescence (TL) glow peak shifted to the lower temperature side with increasing Zn content. These persistent luminescence properties were well explained in terms of lowering of the bottom of the conduction band relative to the ground state of the divalent lanthanide ions. Especially, in Eu3+ co-doped system, TL peak shifted from 520 K to 318 K by 50% Zn substitution. The persistent radiance of the (Mg0.5 Zn0.5)GeO3: Mn2+-Eu3+ sample at 1 h after ceasing UV light was 46 times stronger than that of MgGeO3:Mn2+-Eu3+, and 11 times stronger than that of ZnGa2O4: Cr3+ standard deep red persistent phosphor.

Physical processes in thin-film electroluminescent structures based on ZnS:Mn showing self-organized patterns

International Nuclear Information System (INIS)

Zuccaro, S.; Raker, Th.; Niedernostheide, F.-J.; Kuhn, T.; Purwins, H.-G.

2003-01-01

Physical processes in thin ZnS:Mn films and their relation to the formation of dynamical patterns in the electroluminescence of AC driven films are investigated. The technique of photo-depolarization-spectroscopy is used to investigate defect states in these films and it is shown that specific features in the spectra correlate with the observed self-organized patterns. Furthermore, the time dependence of the dissipative current is measured at the same samples and compared with current waveforms obtained from numerical simulations of a drift-diffusion model. The results are used to discuss the origin of the self-organized processes in ZnS:Mn-films

Luminescent properties of near UV excitable Ba2ZnS3 : Mn red emitting phosphor blend for white LED and display applications

International Nuclear Information System (INIS)

Thiyagarajan, P; Kottaisamy, M; Rao, M S Ramachandra

2006-01-01

A bright red colour emitting Mn doped Ba 2 ZnS 3 phosphor was prepared by an ecologically acceptable carbothermal reduction method without an inert gas or hazardous gas (H 2 S) environment. The phosphor can be excited with UV wavelength radiation to realize emission in the visible range. X-ray diffraction studies confirm an orthorhombic structure with phase group, pnam. The photoluminescence (PL) emission spectrum shows a broad band with emission maximum at 625 nm under the host excitation of 358 nm, which lies in the near UV region. The concentration of Mn was varied from 0.0025 to 0.20 mole with respect to Zn and the optimum PL emission intensity was obtained at the concentration of 0.01 mole of Mn. The CIE (Commission Internationale de l'Eclairage) colour coordinates measurement (x = 0.654 and y = 0.321) shows that the primary emission is in the red region. The triband phosphors blend containing Sr 5 (PO 4 ) 3 Cl : Eu 2+ (blue), ZnS : Cu,Al (green) and Ba 2 ZnS 3 : Mn (red) shows white light emission under 365 nm excitation having CIE chromaticity (x = 0.292 and y = 0.251). Since phosphor excitation lies in the near UV excitable region, giving a bright red emission, it can be used for applications in near UV phosphor converted white LED lighting and display devices

Optical and structural properties of natural MnSeO{sub 4} mineral thin film

Energy Technology Data Exchange (ETDEWEB)

Kariper, Ishak Afsin, E-mail: akariper@gmail.com [Erciyes University, Education Faculty, Kayseri (Turkey)

2017-05-15

Manganese selenite (MnSeO{sub 4}) crystalline thin film has been produced with chemical bath deposition on substrates (commercial glass). Properties of the thin film, such as transmittance, absorption, and optical band gap and refraction index have been investigated via UV/VIS Spectrum. The structural properties of orthorhombic form have been observed in XRD. The structural and optical properties of MnSeO{sub 4} thin films, deposited at different pH levels were analyzed. Some properties of the films have been changed with the change of pH level, which has been deeply investigated. The grain size of MnSeO{sub 4} thin film has reached its highest value at pH 9. The refraction index and extinction coefficient of MnSeO{sub 4} thin films were measured to be 1.53, 2.86, 2.07, 1.53 (refraction index) and 0.005, 0.029, 0.014, 0.005 (extinction coefficient) for grain sizes 21, 13, 26, and 5 nm respectively. The band gaps (Eg) of the films were measured to be 2.06, 2.57, 2.04, and 2.76 eV for the grain sizes mentioned above. The value of dielectric constant at pH 10 was calculated as 1.575. (author)

Effect of Annealing Temperature and Spin Coating Speed on Mn-Doped ZnS Nanocrystals Thin Film by Spin Coating

Directory of Open Access Journals (Sweden)

Noor Azie Azura Mohd Arif

2017-01-01

Full Text Available ZnS:Mn nanocrystals thin film was fabricated at 300°C and 500°C via the spin coating method. Its sol-gel was spin coated for 20 s at 3000 rpm and 4000 rpm with metal tape being used to mold the shape of the thin film. A different combination of these parameters was used to investigate their influences on the fabrication of the film. Optical and structural characterizations have been performed. Optical characterization was analyzed using UV-visible spectroscopy and photoluminescence spectrophotometer while the structural and compositional analysis of films was measured via field emission scanning electron microscopy and energy dispersive X-ray. From UV-vis spectra, the wavelength of the ZnS:Mn was 250 nm and the band gap was within the range 4.43 eV–4.60 eV. In room temperature PL spectra, there were two emission peaks centered at 460 nm and 590 nm. Under higher annealing temperature and higher speed used in spin coating, an increase of 0.05 eV was observed. It was concluded that the spin coating process is able to synthesize high quality spherical ZnS:Mn nanocrystals. This conventional process can replace other high technology methods due to its synthesis cost.

Mn{sup 2+} ions distribution in doped sol–gel deposited ZnO films

Energy Technology Data Exchange (ETDEWEB)

Stefan, Mariana, E-mail: mstefan@infim.ro [National Institute of Materials Physics, P.O. Box MG-7, 077125 Magurele (Romania); Ghica, Daniela; Nistor, Sergiu V.; Maraloiu, Adrian V. [National Institute of Materials Physics, P.O. Box MG-7, 077125 Magurele (Romania); Plugaru, Rodica [National Institute for R & D in Microtechnologies (IMT), Erou Iancu Nicolae Str. 126A, 077190 Bucharest (Romania)

2017-02-28

Highlights: • Several Mn{sup 2+} centers observed by EPR in sol–gel ZnO films. • Mn{sup 2+} ions localized at Zn{sup 2+} sites in ZnO grains and disordered ZnO phase. • Sixfold coordinated Mn{sup 2+} ions localized in inter-grain region. • Aggregated Mn in insular-like regions between ZnO grains in the ZnO:5%Mn film. • Aggregated Mn phase presence and distribution observed by EPR and EDX-STEM. - Abstract: The localization and distribution of the Mn{sup 2+} ions in two sol–gel deposited ZnO films doped with different manganese concentrations were investigated by electron paramagnetic resonance spectroscopy and analytical transmission electron microscopy. In the lightly doped sample the Mn{sup 2+} ions are mainly localized substitutionally at isolated tetrahedrally coordinated Zn{sup 2+} sites in both crystalline ZnO nanograins (34%) and surrounding disordered ZnO (52%). In the highly doped ZnO film, a much smaller proportion of manganese substitutes Zn{sup 2+} in the crystalline and disordered ZnO (10%). The main amount (85%) of manganese aggregates in a secondary phase as an insular-like distribution between the ZnO nanograins. The remaining Mn{sup 2+} ions (14% and 5% at low and high doping levels, respectively) are localized at isolated, six-fold coordinated sites, very likely in the disordered intergrain region. Annealing at 600 °C induced changes in the Mn{sup 2+} ions distribution, reflecting the increase of the ZnO crystallization degree, better observed in the lightly doped sample.

Electrodeposited ZnIn{sub 2}S{sub 4} onto TiO{sub 2} thin films for semiconductor-sensitized photocatalytic and photoelectrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Assaker, Ibtissem Ben, E-mail: ibtissem.ben-assaker@laposte.net [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l’Energie Technopole borj cedria, Bp 95, Hammamm lif 2050 (Tunisia); Gannouni, Mounir; Naceur, Jamila Ben [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l’Energie Technopole borj cedria, Bp 95, Hammamm lif 2050 (Tunisia); Almessiere, Munirah Abdullah; Al-Otaibi, Amal Lafy; Ghrib, Taher [Laboratory of Physical Alloys (LPA), College of Science, University of Dammam (Saudi Arabia); Shen, Shouwen [Advanced Analysis Unit, Technical Service Division Research & Development Center Saudi Aramco, Dhahran (Saudi Arabia); Chtourou, Radhouane [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l’Energie Technopole borj cedria, Bp 95, Hammamm lif 2050 (Tunisia)

2015-10-01

Graphical abstract: - Highlights: • ZnIn{sub 2}S{sub 4} thin films was grown using electrodeposition route onto TiO{sub 2}/ITO coated glass substrate. • Study of the heterostructure ZnIn{sub 2}S{sub 4}/TiO{sub 2} thin films. • Photocatalytic activity of ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure under visible light irradiation. • High performance of Photoelectrochemical properties in the presence of the junction ZnIn{sub 2}S{sub 4}/TiO{sub 2}. - Abstract: In this study, ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure was successfully synthesized on ITO-coated glass substrates via a facile two-step process from aqueous solution. First, TiO{sub 2} thin film was prepared by sol–gel and deposited onto ITO coated glass substrate by spin-coating method. Then the zinc indium sulfide semiconductor was fabricated via electrodeposition technique onto TiO{sub 2}/ITO coated glass electrode. The X-ray diffraction patterns confirm that the heterostructure is mixed of both Anatase TiO{sub 2} and Rhombohedric ZnIn{sub 2}S{sub 4}. The scanning electron microscopy (SEM) images show that the morphology change with the deposition of ZnIn{sub 2}S{sub 4} over TiO{sub 2} thin film and a total coverage of the electrode surface was obtained. Optical absorption spectroscopy study of ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure exhibits a remarkable red-shift compared to the TiO{sub 2} and ZnIn{sub 2}S{sub 4} achieve the best efficiency of visible light absorption. Therefore, it is expected to apply to visible-light photocatalysis and solar cells. To investigate the effect of the heterojunction on the photocatalytic activity of ZnIn{sub 2}S{sub 4}/TiO{sub 2} thin films, photodegradation of methylene blue in the presence of ZnIn{sub 2}S{sub 4} was performed. ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure exhibited strong photocatalytic activity, and the degradation of methylene blue eached 91% after irradiation only for 4 h. Also, the study of the photocurrent density produced

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Magnetic and magneto-optical characteristics of spin coated Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} thin films on Pt (1 1 1) coated Si substrate

Energy Technology Data Exchange (ETDEWEB)

Gupta, Arti, E-mail: artigupta80@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi110007 (India); Dutta, Shankar [Solid State Physics Laboratory, DRDO, Lucknow Road, Timarpur, Delhi110054 (India); Tandon, Ram Pal [Department of Physics and Astrophysics, University of Delhi, Delhi110007 (India)

2016-05-15

Highlights: • Properties of Co{sub 0.6}Zn{sub 0.4}Mn{sub 0.3}Fe{sub 1.7}O{sub 4} thin films on Pt-Si substrate are reported. • Reduction in thickness ∼27% with increased annealing temperature was found. • Partial (3 3 3) plane textured orientation was noted for these films. - Abstract: This paper reports magnetic and magneto-optical properties of Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} nanocrystalline thin films (thickness ∼140–200 nm) deposited on Pt (1 1 1)/Ti/SiO{sub 2}/Si substrates by spin coating technique. Deposited films are then annealed at 600 °C and 700 °C for 60 min (significant reduction in film thickness from 200 nm to 140 nm was noted with the increase in post deposition annealing temperature). The X ray diffraction patterns confirmed the spinel cubic structure of Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} films with polycrystalline phase and also indicated a partial <3 3 3> texture orientation. Deposited films showed magnetic anisotropy as evidenced from magnetic and magneto-optical measurements. Higher in plane remnant magnetization and low coercivity values as compared to out of plane ones were observed for both samples, indicating in plane alignment of easy axis of magnetization.

High-Throughput Synthesis and Characterization of Eu Doped Ba xSr2- xSiO4 Thin Film Phosphors.

Science.gov (United States)

Frost, Sara; Guérin, Samuel; Hayden, Brian E; Soulié, Jean-Philippe; Vian, Chris

2018-06-20

High-throughput techniques have been employed for the synthesis and characterization of thin film phosphors of Eu-doped Ba x Sr 2- x SiO 4 . Direct synthesis from evaporation of the constituent elements under a flux of atomic oxygen on a sapphire substrate at 850 °C was used to directly produce thin film libraries (415 nm thickness) of the crystalline orthosilicate phase with the desired compositional variation (0.24 > x > 1.86). The orthosilicate phase could be synthesized as a pure, or predominantly pure, phase. Annealing the as synthesized library in a reducing atmosphere resulted in the reduction of the Eu while retaining the orthosilicate phase, and resulted in a materials thin film library where fluorescence excited by blue light (450 nm) was observable by the naked eye. Parallel screening of the fluorescence from the combinatorial libraries of Eu doped Ba x Sr 2- x SiO 4 has been implemented by imaging the fluorescent radiation over the library using a monochrome digital camera using a series of color filters. Informatics tools have been developed to allow the 1931 CIE color coordinates and the relative quantum efficiencies of the materials library to be rapidly assessed and mapped against composition, crystal structure and phase purity. The range of compositions gave values of CIE x between 0.17 and 0.52 and CIE y between 0.48 and 0.69 with relative efficiencies in the range 2.0 × 10 -4 -7.6 × 10 -4 . Good agreement was obtained between the thin film phosphors and the fluorescence characteristics of a number of corresponding bulk phosphor powders. The thermal quenching of fluorescence in the thin film libraries was also measured in the temperature range 25-130 °C: The phase purity of the thin film was found to significantly influence both the relative quantum efficiency and the thermal quenching of the fluorescence.

Preparation and characterization of co-evaporated Cu{sub 2}ZnGeSe{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Uday Bhaskar, P.; Suresh Babu, G.; Kishore Kumar, Y.B.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

2013-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGSe), a member of Cu{sub 2}–II–IV–VI{sub 4} family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} which have been explored in recent years as alternate to CuInGaSe{sub 2} solar cells. The effect of substrate temperature (523 K–723 K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723 K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu{sub (2−x)}Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a = 0.563 nm, c = 1.101 nm. The direct optical band gap of CZGSe films is found to be 1.63 eV which is close to ideal band gap of 1.50 eV for the highest photovoltaic conversion efficiency. The films are found to be p-type. - Highlights: • Synthesis of Cu{sub 2}ZnGeSe{sub 4} films for solar cell absorber layer • Effect of substrate temperature on the growth of co-evaporated Cu{sub 2}ZnGeSe{sub 4} films • X-ray diffraction, Raman and morphological studies of Cu{sub 2}ZnGeSe{sub 4} thin films.

Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

International Nuclear Information System (INIS)

Sima, M.; Mihut, L.; Vasile, E.; Sima, Ma.; Logofatu, C.

2015-01-01

Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn 2+ ions into the Zn 2+ site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn 2+ ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A 1 (LO) vibrational modes, from 482 and 567 cm −1 to 532 and 580 cm −1 , respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm −1 spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm −1 confirms the insertion of Mn 2+ ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn 2+ ions into Zn 2+ site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm −1 at high Mn concentration • Compensation of the oxygen vacancy at higher Mn concentration in ZnO lattice

Synthesis of nanocrystalline nickel-zinc ferrite (Ni0.8Zn0.2Fe2O4) thin films by chemical bath deposition method

International Nuclear Information System (INIS)

Pawar, D.K.; Pawar, S.M.; Patil, P.S.; Kolekar, S.S.

2011-01-01

Graphical abstract: Display Omitted Research highlights: → We have successfully synthesized nickel-zinc ferrite (Ni 0.8 Zn 0.2 Fe 2 O 4 ) thin films on stainless steel substrates using a low temperature chemical bath deposition method. → The surface morphological study showed the compact flakes like morphology. → The as-deposited thin films are hydrophilic (10 o o ) whereas the annealed thin films are super hydrophilic (θ o ) in nature. → Ni 0.8 Zn 0.2 Fe 2 O 4 thin films could be used in supercapacitor. - Abstract: The nickel-zinc ferrite (Ni 0.8 Zn 0.2 Fe 2 O 4 ) thin films have been successfully deposited on stainless steel substrates using a chemical bath deposition method from alkaline bath. The films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), static water contact angle and cyclic voltammetry measurements. The X-ray diffraction pattern shows that deposited Ni 0.8 Zn 0.2 Fe 2 O 4 thin films were oriented along (3 1 1) plane. The FTIR spectra showed strong absorption peaks around 600 cm -1 which are typical for cubic spinel crystal structure. SEM study revealed compact flakes like morphology having thickness ∼1.8 μm after air annealing. The annealed films were super hydrophilic in nature having a static water contact angle (θ) of 5 o .The electrochemical supercapacitor study of Ni 0.8 Zn 0.2 Fe 2 O 4 thin films has been carried out in 6 M KOH electrolyte. The values of interfacial and specific capacitances obtained were 0.0285 F cm -2 and 19 F g -1 , respectively.

Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

Energy Technology Data Exchange (ETDEWEB)

Sima, M., E-mail: msima@infim.ro [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Mihut, L. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Vasile, E. [University “Politehnica”of Bucharest, Faculty of Applied Chemistry and Material Science, Department of Oxide Materials and Nanomaterials, No. 1-7 Gh. Polizu Street, 011061 Bucharest (Romania); Sima, Ma.; Logofatu, C. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania)

2015-09-01

Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn{sup 2+} ions into the Zn{sup 2+} site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn{sup 2+} ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A{sub 1} (LO) vibrational modes, from 482 and 567 cm{sup −1} to 532 and 580 cm{sup −1}, respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm{sup −1} spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm{sup −1} confirms the insertion of Mn{sup 2+} ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn{sup 2+} ions into Zn{sup 2+} site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm{sup −1} at high Mn concentration • Compensation of the oxygen vacancy at higher

Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

Energy Technology Data Exchange (ETDEWEB)

Caballero, R., E-mail: raquel.caballero@uam.es [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Izquierdo-Roca, V. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Merino, J.M.; Friedrich, E.J. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Climent-Font, A. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); CMAM, Universidad Autónoma de Madrid, C/Faraday 3, E-28049, Madrid (Spain); Saucedo, E. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Pérez-Rodríguez, A. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN" 2UB, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain); León, M. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain)

2013-05-01

A study of Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu{sub 2}ZnSnS{sub 4} bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu{sub 2}ZnSnS{sub 4} deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells.

Influences of oxygen incorporation on the structural and optoelectronic properties of Cu_2ZnSnS_4 thin films

International Nuclear Information System (INIS)

Yu, Ruei-Sung; Hung, Ta-Chun

2016-01-01

Highlights: • Oxygen incorporation in Cu_2ZnSnS_4 changes the energy band structure. • The material has a comparatively high-absorptive capacity for short wavelength. • Absorption coefficients of the film increase from 10"4 to 10"5 cm"−"1. • The oxygen-containing CZTS film has a mixture of crystallite and crystalline states. • The material could be a candidate as an absorber layer in multi-junction solar cells. - Abstract: This study used the sol–gel method to prepare Cu_2ZnSnS_4 thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu_2ZnSnS_4 films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu_2ZnSnS_4 film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu_2ZnSnS_4 changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10"4 cm"−"1 to 10"5 cm"−"1. The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu_2ZnSnS_4 thin film could be a candidate for the p-type absorber layer material required in multi-junction solar cells.

A novel red phosphor Mg2GeO4 doped with Eu3+ for PDP applications

International Nuclear Information System (INIS)

Yang Hongmei; Shi Jianxin; Liang Hongbin; Gong Menglian

2006-01-01

A novel red emitting phosphor, Eu 3+ -doped Mg 2 GeO 4 , was prepared by the solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed the formation of Mg 2 GeO 4 :Eu 3+ . Field-emission-scanning electron microscopy (FE-SEM) observation indicated a narrow size-distribution of about 0.5-2 μm nm for the particles with spindle-like shape. Photoluminescence (PL) and vacuum ultraviolet (VUV) excitation characteristics of the phosphor Mg 2 GeO 4 :Eu 3+ were studied. We have also studied the effect of preparation conditions such as temperature, heating time on the PL data. Photoluminescence measurements indicated that the phosphor exhibits bright red emission at about 609 nm under UV excitation. And the vacuum ultraviolet spectra present that the novel red phosphor Mg 2 GeO 4 :Eu 3+ shows strong absorption in the VUV region, which ensures the efficient absorption of the Xe plasma emission lines. The phosphor Mg 2 GeO 4 :Eu 3+ shows the strongest emission at 613 nm corresponding to the electric dipole 5 D - 7 F 2 transition of Eu 3+ excited at 147 nm. The optical properties study suggests that it is a potential candidate for plasma display panels (PDPs) application

Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

Energy Technology Data Exchange (ETDEWEB)

Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

2015-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

Synthesis and Luminescence Properties of Yellow-emitting SiO2/Zn2SiO4: Mn Nanocomposite

Directory of Open Access Journals (Sweden)

Karim OMRI

2014-05-01

Full Text Available Yellow light emitting Mn2+-doped b-Zn2SiO4 phosphor nanoparticles embedded in SiO2 host matrix, were prepared by a simple solid-phase reaction under natural atmosphere at 1500 °C for 2 hours after the incorporation of manganese doped zinc oxide nanoparticles in silica using sol-gel method. The SiO2/Zn2SiO4:Mn nanocomposite was characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, scanning electron microscopy (SEM and photoluminescence (PL. The nanopowder was crystallized in triclinic b-Zn2SiO4 phase with a particles size varies between 70 nm and 84 nm. The SiO2/b-Zn2SiO4:Mn nanocomposite exhibited a broad yellow emission band at 575 nm under UV excitation light. The dependence of the intensity and energy position of the obtained PL band on measurement temperature and power excitation will be discussed.

Preparation of manganese-doped ZnO thin films and their ...

Indian Academy of Sciences (India)

Various physical and chemical techniques that has been used to deposit Mn:ZnO thin films .... appearance and Mn-doped films were slightly brownish with a good adherence to the ..... shows a constantly decreasing trend with increasing man-.

Fabrication and characterization of thin-film phosphor combinatorial libraries

Science.gov (United States)

Mordkovich, V. Z.; Jin, Zhengwu; Yamada, Y.; Fukumura, T.; Kawasaki, M.; Koinuma, H.

2002-05-01

The laser molecular beam epitaxy method was employed to fabricate thin-film combinatorial libraries of ZnO-based phosphors on different substrates. Fabrication of both pixel libraries, on the example of Fe-doped ZnO, and spread libraries, on the example of Eu-doped ZnO, has been demonstrated. Screening of the Fe-doped ZnO libraries led to the discovery of weak green cathodoluminescence with the maximum efficiency at the Fe content of 0.58 mol %. Screening of the Eu-doped ZnO libraries led to the discovery of unusual reddish-violet cathodoluminescence which is observed in a broad range of Eu concentration. No photoluminescence was registered in either system.

Characterization of nanostructured Mn3O4 thin films grown by SILAR method at room temperature

International Nuclear Information System (INIS)

Ubale, A.U.; Belkhedkar, M.R.; Sakhare, Y.S.; Singh, Arvind; Gurada, Chetan; Kothari, D.C.

2012-01-01

A novel successive ionic layer adsorption and reaction method has been successfully employed to grow nanostructured conducting nearly transparent thin films of Mn 3 O 4 on to glass substrates at room temperature using MnCl 2 and NaOH as cationic and anionic precursors. The structural and morphological characterizations of the as deposited Mn 3 O 4 films have been carried out by means of X-ray diffraction (XRD), Field Emission Scanning Electron Micrograph (FESEM), EDAX, Atomic Fore Microscopy (AFM) and Fourier Transform Infrared Spectrum (FTIR) analysis. The optical absorption and electrical resistivity measurements were carried out to investigate optical band gap and activation energy of Mn 3 O 4 films deposited by SILAR method. The optical band gap and activation energy of the as deposited film is found to be 2.70 and 0.14 eV respectively. The thermo-emf measurements of Mn 3 O 4 thin film confirm its p-type semiconducting nature. Highlights: ► Nanostructured Mn 3 O 4 thin film is prepared by SILAR method at room temperature. ► The film is nanocrystalline with orthorhombic structure of Mn 3 O 4 . ► The XRD, FTIR, FESEM, EDX and AFM characterization confirms nanocrystalline nature. ► Optical band gap, electrical resistivity and activation energy of film is reported. ► A thermo-emf measurement confirms p-type conductivity of Mn 3 O 4 films.

Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

Science.gov (United States)

Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

2013-05-22

Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

Energy transfer between Pr3+ and Mn2+ in K2YZr(PO4)3: Pr, Mn phosphor

International Nuclear Information System (INIS)

Liang Wei; Wang Yuhua

2011-01-01

Research highlights: → Pr 3+ , Mn 2+ co-doped K 2 YZr(PO 4 ) 3 phosphor is a novel type of practical visible quantum cutting phosphor in promising application. → The optimal quantum efficiency (QE) of this co-doped system K 2 YZr(PO 4 ) 3 : Pr 3+ , Mn 2+ reached to 126.3%. → The Mn 2+6 A 1g → 4 E g - 4 A 1g transition was found to coincide well with the 1 S 0 → 1 I 6 transition of Pr 3+ . → The energy transfer from Pr 3+ to Mn 2+ was also observed, converting the first photon from the PCE of Pr 3+ into the red emission of Mn 2+ , and the QC process occurred in this Pr 3+ , Mn 2+ co-doped K 2 YZr(PO 4 ) 3 phosphor. - Abstract: Pr 3+ , Mn 2+ co-doped K 2 YZr(PO 4 ) 3 samples were prepared by solid-state reaction method and their photoluminescence (PL) properties were investigated in ultra-violet (UV) and vacuum ultra-violet (VUV) region. The results indicated that in Pr 3+ singly doped K 2 YZr(PO 4 ) 3 sample, the first-step transition ( 1 S 0 → 1 I 6 , 3 P J around 405 nm) of Pr 3+ is near the ultraviolet (UV) range, not useful for practical application. When Mn 2+ was doped as a co-activator ion, the energy of 1 S 0 → 1 I 6 , 3 P J transition can be transferred synchronously from Pr 3+ to Mn 2+ and then emit a visible photon. The optimal quantum efficiency (QE) of this co-doped system K 2 YZr(PO 4 ) 3 : Pr 3+ , Mn 2+ reached to 126.3%, suggesting a novel type of practical visible quantum cutting phosphor in promising application.

Growth and in-plane magnetic anisotropy of inverse spinel Co{sub 2}MnO{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Koo, Taeyeong; Kim, Jaeyeong [Pohang University of Science and Technology, Pohang (Korea, Republic of); Song, Jonghyun [Chungnam National University, Daejeon (Korea, Republic of)

2014-11-15

Epitaxial Co{sub 2}MnO{sub 4} thin films were grown on Nb(0.1wt.)-doped SrTiO{sub 3} single-crystal substrates with (100) and (110) crystal orientations by using pulsed laser deposition. Their crystal structures and magnetic properties were investigated. Both samples exhibited ferrimagnetic transitions with enhanced transition temperatures. Isotropic M-H loops were observed on the in-plane surface of Co{sub 2}MnO{sub 4}(00l) grown on Nb(0.1wt)-doped SrTiO{sub 3}(100). Strong magnetic anisotropy was observed on the in-plane surface for Co{sub 2}MnO{sub 4} (ll0) grown on Nb(0.1wt)-doped SrTiO{sub 3}(110). A magnetic easy axis existed along the elongated tetragonal direction. This was attributed to the strong interplay between the spin and lattice degrees of freedom in the Co{sub 2}MnO{sub 4} thin film.

Synthesis and photoluminescence spectroscopy of BaGeF6:Mn4+ red phosphor

Science.gov (United States)

Sekiguchi, Daisuke; Adachi, Sadao

2015-04-01

We synthesized Mn4+-activated BaGeF6 red phosphor by the chemical reaction method from HF, H2SiF6, BaF2, KMnO4, and GeO2 powder. The structural and optical properties of BaGeF6:Mn4+ were investigated using X-ray diffraction analysis, secondary electron microscopy observation, electron spin resonance measurement, photoluminescence (PL), PL excitation (PLE) and Raman scattering spectroscopies, and luminescence decay time measurement. Temperature dependence of the PL intensity was measured from T = 20 to 500 K and analyzed by taking into consideration the Bose-Einstein phonon occupation number. The PLE spectra measured at T = 20 and 300 K and luminescence decay time at T = 20-460 K were also analyzed based on the Franck-Condon and conventional thermal quenching models, respectively. Comprehensive discussion was given on the Mn4+-related PL properties and Raman scattering behaviors in a family of the barium hexafluorometallate phosphors.

Growth of LiMn{sub 2}O{sub 4} thin films by pulsed-laser deposition and their electrochemical properties in lithium microbatteries

Energy Technology Data Exchange (ETDEWEB)

Julien, C. [Univ. Pierre et Marie Curie, Paris (France). LMDH; Haro-Poniatowski, E. [Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, Mexico (Mexico); Camacho-Lopez, M.A. [LMDH, UMR 7603, Universite Pierre et Marie Curie, 4 place Jussieu, 75252, Paris (France); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico (Mexico); Jimenez-Jarquin, J. [Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, Mexico (Mexico)

2000-03-01

Films of LiMn{sub 2}O{sub 4} were grown by pulsed-laser deposition (PLD) onto silicon wafers using sintered targets which consisted in the mixture of LiMn{sub 2}O{sub 4} and Li{sub 2}O powders. The film formation has been studied as a function of the preparation conditions, i.e. composition of the target, substrate temperature, and oxygen partial pressure in the deposition chamber. Composition, morphology and structural properties of PLD films have been investigated using Rutherford backscattering spectroscopy, scanning electron microscopy, X-ray diffraction and Raman scattering spectroscopy. The films deposited from target LiMn{sub 2}O{sub 4}+15% Li{sub 2}O have an excellent crystallinity when deposited onto silicon substrate maintained at 300 C in an oxygen partial pressure of 100 mTorr. It is found that such a film crystallizes in the spinel structure (Fd3m symmetry) as evidenced by X-ray diffraction. Well-textured polycrystalline films exhibit crystallite size of 300 nm. Pulsed-laser deposited LiMn{sub 2}O{sub 4} thin films obtained with a polycrystalline morphology were successfully used as cathode materials in lithium microbatteries. The Li//LiMn{sub 2}O{sub 4} thin film cells have been tested by cyclic voltammetry and galvanostatic charge-discharge techniques in the potential range 3.0-4.2 V. Specific capacity as high as 120 mC/cm{sup 2} {mu}m was measured on polycrystalline films. The chemical diffusion coefficients for the Li{sub x}Mn{sub 2}O{sub 4} thin films appear to be in the range of 10{sup -11}-10{sup -12} cm{sup 2}/s. Electrochemical measurements show a good cycleability of PLD films when cells are charged-discharged at current densities of 5-25 {mu}A/cm{sup 2}. (orig.)

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2016-03-24

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Venkatesh, S.; Baras, A.; Roqan, I. S., E-mail: Iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

2016-03-15

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

Structural, morphological and optical properties of spray deposited Mn-doped CeO2 thin films

International Nuclear Information System (INIS)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G.

2014-01-01

Highlights: • Spray deposited undoped and Mn-doped CeO 2 thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO 2 thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO 2 films were studied. It was found that both the undoped and doped CeO 2 films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO 2 film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported

Spray-coated ligand-free Cu2ZnSnS4 nanoparticle thin films

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Murthy, Swathi; Kofod, Guggi

We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user- and environ......We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user......- and environmentally-friendly alkali metal chloride salts can be directly dissolved in controllable amounts. The homogeneous distribution of alkali metals in the ink allows uniform grain growth within the deposited absorber layer as a result of liquid phase assisted sintering. We find that particularly beneficial...... as an unquantifiable amount of ZnS. A Sono-tek spray-coating system is used which utilizes ultrasonic atomization. We investigate the effect of different binders, ink concentration, and spray-coating conditions, i.e. spray power, flow rate from syringe pump, distance between spray nozzle and the substrate, and time...

Substrates effect on Zn1-xMnxO thin films grown by RF magnetron sputtering

International Nuclear Information System (INIS)

Elanchezhiyan, J.; Bhuvana, K.P.; Gopalakrishnan, N.; Balasubramanian, T.

2008-01-01

In this paper, we have presented the surface effect of the substrates on Mn doped ZnO (Zn 1-x Mn x O) thin films grown on Si(1 0 0) and sapphire [i.e. Al 2 O 3 (0 0 0 1)] by RF magnetron sputtering. These grown films have been characterized by X-ray diffraction (XRD), photoluminescence (PL) and vibrating sample magnetometer (VSM) to know its structural, optical and magnetic properties. All these properties have been found to be strongly influenced by the substrate surface on which the films have been deposited. The XRD results show that the Mn doped ZnO films deposited on Si(1 0 0) exhibit a polycrystalline nature whereas the films on sapphire substrate have only (0 0 2) preferential orientations indicating that the films are single crystalline. The studies of room temperature PL spectra reveal that the Zn 1-x Mn x O/Si(1 0 0) system is under severe compressive strain while the strain is almost relaxed in Zn 1-x Mn x O/Al 2 O 3 (0 0 0 1) system. It has been observed from VSM studies that Zn 1-x Mn x O/Al 2 O 3 (0 0 0 1) system shows ferromagnetic nature while the paramagnetic behaviour observed in Zn 1-x Mn x O/Si(1 0 0) system

Phase transition and multicolor luminescence of Eu2+/Mn2+-activated Ca3(PO4)2 phosphors

International Nuclear Information System (INIS)

Li, Kai; Chen, Daqin; Xu, Ju; Zhang, Rui; Yu, Yunlong; Wang, Yuansheng

2014-01-01

Graphical abstract: We have synthesized Eu 2+ doped and Eu 2+ /Mn 2+ co-doped Ca 3 (PO 4 ) 2 phosphors. The emitting color varies from blue to green with increasing of Eu 2+ content for the Eu 2+ -doped phosphor, and the quantum yield of the 0.05Eu 2+ : Ca 2.95 (PO 4 ) 2 sample reaches 56.7%. Interestingly, Mn 2+ co-doping into Eu 2+ : Ca 3 (PO 4 ) 2 leads to its phase transition from orthorhombic to rhombohedral, and subsequently generates tunable multi-color luminescence from green to red via Eu 2+ → Mn 2+ energy transfer. - Highlights: • A series of novel Eu 2+ : Ca 3 (PO 4 ) 2 phosphors were successfully synthesized. • Phase transition of Ca 3 (PO 4 ) 2 from orthorhombic to rhombohedral occurred when Mn 2+ ions were doped. • The phosphors exhibited tunable multi-color luminescence. • The quantum yield of 0.05Eu 2+ : Ca 2.95 (PO 4 ) 2 phosphor can reach 56.7%. • The analyses of phosphors were carried out by many measurements. - Abstract: Intense blue-green-emitting Eu 2+ : Ca 3 (PO 4 ) 2 and tunable multicolor-emitting Eu 2+ /Mn 2+ : Ca 3 (PO 4 ) 2 phosphors are prepared via a solid-state reaction route. Eu 2+ -doped orthorhombic Ca 3 (PO 4 ) 2 phosphor exhibits a broad emission band in the wavelength range of 400–700 nm with a maximum quantum yield of 56.7%, and the emission peak red-shifts gradually from 479 to 520 nm with increase of Eu 2+ doping content. Broad excitation spectrum (250–420 nm) of Eu 2+ : Ca 3 (PO 4 ) 2 matches well with the near-ultraviolet LED chip, indicating its potential applications as tri-color phosphors in white LEDs. Interestingly, Mn 2+ co-doping into Eu 2+ : Ca 3 (PO 4 ) 2 leads to its phase transition from orthorhombic to rhombohedral, and subsequently generates tunable multi-color luminescence from green to red via Eu 2+ → Mn 2+ energy transfer, under 365 nm UV lamp excitation

Liquid flow deposited spinel (Ni,Mn){sub 3}O{sub 4} thin films for microbolometer applications

Energy Technology Data Exchange (ETDEWEB)

Le, Duc Thang, E-mail: ducthang36@skku.edu [Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jeon, Chang Jun; Lee, Kui Woong; Jeong, Young Hun; Yun, Ji Sun [Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); Yoon, Dae Ho, E-mail: dhyoon@skku.edu [School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, Jeong Ho, E-mail: goedc@kicet.re.kr [Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of)

2015-03-01

Highlights: • Highly quality (Ni,Mn){sub 3}O{sub 4} thin films were grown using liquid flow deposited (LFD) technique. • It is possible to deposit multi–component manganite–oxide thin films by LFD at low temperatures. • Nickel–manganite films showed a good negative temperature coefficient (NTC) characteristic. • Liquid flow deposited (Ni,Mn){sub 3}O{sub 4} thin films are very potential for microbolometer applications. - Abstract: A liquid flow deposition (LFD) technique was initially used for the fabrication of single-component Mn{sub 3}O{sub 4} thin films onto Si wafer substrates at a range of substrate temperatures of 30–80 °C, with the introduction of an oxidizing reagent (H{sub 2}O{sub 2}). As a result, solid thin films were well formed from an aqueous solution. An X-ray diffraction (XRD) analysis showed typical characteristics of hausmannite Mn{sub 3}O{sub 4} with a spinel tetragonal phase. Field-emission scanning electron microscopy (FE-SEM) observations revealed nano-sized grains arranged uniformly on a dense and smooth surface for all of the as-deposited films. On the other hand, the LFD method was then extended to prepare two-component nickel–manganite films according to the binary chemical composition of Ni{sub x}Mn{sub 3−x}O{sub 4} with x = 0.02–0.2. The as-grown nickel–manganite films showed a surface with a good quality with a spherical bead-like architecture when x ≤ 0.10, while a conversion from spherical grains into highly porous nanowalls in the microstructure was noted in films when x ≥ 0.12. These results signify that it is possible to fabricate various multi-component manganite-oxide thin films at a low temperature. In addition, the dependences of the room-temperature electrical resistivity (ρ) and the temperature coefficient of resistance (TCR) on the Ni substitution level (x) were investigated on films annealed at 400 °C.

Structure and magnetic properties of highly textured nanocrystalline Mn–Zn ferrite thin film

Energy Technology Data Exchange (ETDEWEB)

Joseph, Jaison, E-mail: jaisonjosephp@gmail.com [Department of Physics, Goverment College, Khandola, Goa 403107 India (India); Tangsali, R.B. [Department of Physics, Goa University, Taleigao Plateau, Goa 403206 India (India); Pillai, V.P. Mahadevan [Department of Optoelectronics, University of Kerala,Thiruvananthapuram, Kerala 695581 India (India); Choudhary, R.J.; Phase, D.M.; Ganeshan, V. [UGC-DAE-CSR Indore, Madhya Pradesh 452017 India. (India)

2015-01-01

Nanoparticles of Mn{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} were chemically synthesized by co-precipitating the metal ions in aqueous solutions in a suitable alkaline medium. The identified XRD peaks confirm single phase spinal formation. The nanoparticle size authentication is carried out from XRD data using Debye Scherrer equation. Thin film fabricated from this nanomaterial by pulse laser deposition technique on quartz substrate was characterized using XRD and Raman spectroscopic techniques. XRD results revealed the formation of high degree of texture in the film. AFM analysis confirms nanogranular morphology and preferred directional growth. A high deposition pressure and the use of a laser plume confined to a small area for transportation of the target species created certain level of porosity in the deposited thin film. Magnetic property measurement of this highly textured nanocrystalline Mn–Zn ferrite thin film revealed enhancement in properties, which are explained on the basis of texture and surface features originated from film growth mechanism.

Elucidation of the enhanced ferromagnetic origin in Mn-doped ZnO nanocrystals embedded into a SiO2 matrix

International Nuclear Information System (INIS)

Lee, Sejoon; Lee, Youngmin; Kim, Deukyoung

2013-01-01

The origin of the enhanced room temperature ferromagnetism in Mn-doped ZnO (ZnO:Mn) nanocrystals is investigated. ZnO:Mn nanocrystals, which were fabricated by using a laser irradiation method with a 248-nm KrF excimer laser, exhibited two-times increase in the spontaneous magnetization (∼0.4 emu/cm 3 at 300 K) compared to the ZnO:Mn thin film (∼0.2 emu/cm 3 at 300 K). The increased exchange integral of J 1 /k B = 51.6 K in ZnO:Mn nanocrystals, in comparison with the ZnO:Mn thin film (J 1 /k B = 46.9 K), is indicative of the enhanced ferromagnetic exchange interaction. This is attributed to the large number of acceptor defects in the SiO 2 -capped ZnO:Mn nanocrystals. Namely, the holes bound to the acceptor defects form microscopic bound-magnetic-polarons with Mn ions; hence, long-range ferromagnetic coupling is enhanced. The results suggest that ferromagnetism in ZnO-based dilute magnetic semiconductors can be controlled by modulating the density of native point defects, which can be chemically and thermodynamically modified during the material synthesis or preparation.

Photoluminescence analysis of Ce3+:Zn2SiO4 & Li++ Ce3+:Zn2SiO4: phosphors by a sol-gel method

Science.gov (United States)

Babu, B. Chandra; Vandana, C. Sai; Guravamma, J.; Rudramadevi, B. Hemalatha; Buddhudu, S.

2015-06-01

Here, we report on the development and photoluminescence analysis of Zn2SiO4, Ce3+:Zn2SiO4 & Li+ + Ce3+: Zn2SiO4 novel powder phosphors prepared by a sol-gel technique. The total amount of Ce3+ ions was kept constant in this experiment at 0.05 mol% total doping. The excitation and emission spectra of undoped (Zn2SiO4) and Ce3+ doped Zn2SiO4 and 0.05 mol% Li+ co-doped samples have been investigated. Cerium doped Zn2SiO4 powder phosphors had broad blue emission corresponding to the 2D3/2→2FJ transition at 443nm. Stable green-yellow-red emission has been observed from Zn2SiO4 host matrix and also we have been observed the enhanced luminescence of Li+ co-doped Zn2SiO4:Ce3+. Excitation and emission spectra of these blue luminescent phosphors have been analyzed in evaluating their potential as luminescent screen coating phosphors.

Thin-Film Photoluminescent Properties and the Atomistic Model of Mg2TiO4 as a Non-rare Earth Matrix Material for Red-Emitting Phosphor

Science.gov (United States)

Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang

2016-12-01

Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.

Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

Science.gov (United States)

Belkhedkar, M. R.; Ubale, A. U.

2018-05-01

Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

Influence of deposition parameters and annealing on Cu2ZnSnS4 thin films grown by SILAR

International Nuclear Information System (INIS)

Patel, Kinjal; Shah, Dimple V.; Kheraj, Vipul

2015-01-01

Highlights: • Optimisation of Cu 2 ZnSnS 4 (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu 2 ZnSnS 4 (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur

Nanoporous MnO{sub x} thin-film electrodes synthesized by electrochemical lithiation/delithiation for supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Xia, Hui; Lai, Man On; Lu, Li [Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576 (Singapore)

2011-02-15

Nanoporous MnO{sub x} thin-film electrodes are synthesized using a combination of pulsed laser deposition (PLD) and electrochemical lithiation/delithiation methods. A dense Mn{sub 3}O{sub 4} thin-film deposited by PLD can transform into a nanoporous MnO{sub x} thin-film after electrochemical lithiation/delithiation. A nanoporous MnO{sub x} thin-film electrode exhibits significantly improved supercapacitive performance compared with an as-deposited Mn{sub 3}O{sub 4} thin-film electrode. A MnO{sub x} thin-film finally transforms into a MnO{sub 2} thin-film through an electrochemical oxidation process during continuous cyclic voltammetry scanning. (author)

Magnetic and transport properties of Zn0.4Fe2.6O4 thin films with highly preferential orientation

International Nuclear Information System (INIS)

Lu, Z.L.; Zou, W.Q.; Liu, X.C.; Lin, Y.B.; Lu, Z.H.; Wang, J.F.; Xu, J.P.; Lv, L.Y.; Zhang, F.M.; Du, Y.W.

2007-01-01

Highly preferentially oriented Zn 0.4 Fe 2.6 O 4 thin films have been fabricated on Si, SrTiO 3 and ZrO 2 substrates, respectively, using RF magnetron sputtering. All the films show a large saturation magnetization of about 4.2μ B and low coercive field at 300 K and a spin (cluster) glass transition at about 60 K due to the non-magnetic Zn 2+ ions substitution. Moreover, the fairly high spin polarization of the carrier at 300 K has been confirmed by both the giant magnetoresistance and anomalous Hall coefficient measurements

Growth of Cu2ZnSnS4(CZTS) by Pulsed Laser Deposition for Thin film Photovoltaic Absorber Material

Science.gov (United States)

Nandur, Abhishek; White, Bruce

2014-03-01

CZTS (Cu2ZnSnS4) has become the subject of intense interest because it is an ideal candidate absorber material for thin-film solar cells with an optimal band gap (1.5 eV), high absorption coefficient (104 cm-1) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since thin films are deposited under high vacuum with excellent stoichiometry transfer from the target. CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of laser energy fluence and substrate temperature and post-deposition sulfur annealing on the surface morphology, composition and optical absorption have been investigated. Optimal CZTS thin films exhibited a band gap of 1.54 eV with an absorption coefficient of 4x104cm-1. A solar cell utilizing PLD grown CZTS with the structure SLG/Mo/CZTS/CdS/ZnO/ITO showed a conversion efficiency of 5.85% with Voc = 376 mV, Jsc = 38.9 mA/cm2 and Fill Factor, FF = 0.40.

Microstructure and Electrical Properties of Fe,Cu Substituted (Co,Mn)3O4 Thin Films

DEFF Research Database (Denmark)

Szymczewska, Dagmara; Molin, Sebastian; Hendriksen, Peter Vang

2017-01-01

In this work, thin films (~1000 nm) of a pure MnCo2O4 spinel together with its partially substituted derivatives (MnCo1.6Cu0.2Fe0.2O4, MnCo1.6Cu0.4O4, MnCo1.6Fe0.4O4) were prepared by spray pyrolysis and were evaluated for electrical conductivity. Doping by Cu increases the electrical conductivit...

Influences of oxygen incorporation on the structural and optoelectronic properties of Cu{sub 2}ZnSnS{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Yu, Ruei-Sung, E-mail: rsyu@asia.edu.tw [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China); Department of Medical Research, China Medical University Hospital, China Medical University, Taichung 40402, Taiwan (China); Hung, Ta-Chun [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China)

2016-02-28

Highlights: • Oxygen incorporation in Cu{sub 2}ZnSnS{sub 4} changes the energy band structure. • The material has a comparatively high-absorptive capacity for short wavelength. • Absorption coefficients of the film increase from 10{sup 4} to 10{sup 5} cm{sup −1}. • The oxygen-containing CZTS film has a mixture of crystallite and crystalline states. • The material could be a candidate as an absorber layer in multi-junction solar cells. - Abstract: This study used the sol–gel method to prepare Cu{sub 2}ZnSnS{sub 4} thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu{sub 2}ZnSnS{sub 4} films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu{sub 2}ZnSnS{sub 4} film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu{sub 2}ZnSnS{sub 4} changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10{sup 4} cm{sup −1} to 10{sup 5} cm{sup −1}. The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu{sub 2}ZnSnS{sub 4} thin film could be a candidate for the p-type absorber layer material required in multi-junction solar cells.

Synthesis and characterisation of Cu{sub 2}ZnSnSe{sub 4} thin films prepared via a vacuum evaporation-based route

Energy Technology Data Exchange (ETDEWEB)

Volobujeva, O., E-mail: v.olga@staff.ttu.ee; Bereznev, S.; Raudoja, J.; Otto, K.; Pilvet, M.; Mellikov, E.

2013-05-01

Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu{sub 2}ZnSnSe{sub 4} films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu{sub 2}ZnSnSe{sub 4} thin films was studied. Our results indicate the possibility of replacing the Se{sub 2} selenisation with a thermal treatment in an SnSe{sub 2} atmosphere to avoid the selenisation of the Mo substrate and MoSe{sub 2} formation. This SnSe{sub 2} treatment forms p-type Cu{sub 2}ZnSnSe{sub 4} films with an optical band-gap of 1.14 eV and a solar cell structure with an efficiency of up to 3%. - Highlights: ► Cu{sub 2}ZnSnSe{sub 4} thin films were grown using binary precursors and selenisation. ► Composition and morphology were studied in dependence of selenisation atmosphere. ► The use of SnSe{sub 2} selenisation allows to avoid Mo substrate selenisation. ► The high quality of films is indicated by the value of their E{sub g} = 1.14 eV. ► Cu{sub 2}ZnSnSe{sub 4} thin films were in p-type conductivity and were realized as solar cells.

Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application

International Nuclear Information System (INIS)

Tiwari, Devendra; Chaudhuri, Tapas K.; Ray, Arabinda; Tiwari, Krishan Dutt

2014-01-01

A process for deposition of Cu 2 ZnSnS 4 (CZTS) films using replacement of Zn 2+ in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 10 17 cm −3 and 1.4 cm 2 V −1 s −1 respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO 2 :In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm 2 , respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region. - Highlights: • Pure kesterite Cu 2 ZnSnS 4 thin films deposited by replacement reaction route • Energy band gap of films is 1.45 eV. • p-type films with conductivity of 4.6 S/cm and mobility of 1.4 cm 2 S −1 V −1 • Fabrication of Graphite/Cu 2 ZnSnS 4 /CdS/ZnO/SnO 2 :In/Glass solar cell • Solar cell delivered efficiency of 6.17% with high fill factor of 0.62

Characterization of nanostructured Mn{sub 3}O{sub 4} thin films grown by SILAR method at room temperature

Energy Technology Data Exchange (ETDEWEB)

Ubale, A.U., E-mail: ashokuu@yahoo.com [Nanostructure Thin Film Materials Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, VMV Road, Amravati 444604, Maharashtra (India); Belkhedkar, M.R. [Department of Physics, Shri Shivaji College, Akola 444003, Maharashtra (India); Sakhare, Y.S. [Nanostructure Thin Film Materials Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, VMV Road, Amravati 444604, Maharashtra (India); Singh, Arvind [National Centre for Nanomaterials and Nanotechnology, University of Mumbai, Santacruz, Mumbai, Maharashtra (India); Gurada, Chetan; Kothari, D.C. [Department of Physics, University of Mumbai, Santacruz, Mumbai, Maharashtra (India)

2012-10-15

A novel successive ionic layer adsorption and reaction method has been successfully employed to grow nanostructured conducting nearly transparent thin films of Mn{sub 3}O{sub 4} on to glass substrates at room temperature using MnCl{sub 2} and NaOH as cationic and anionic precursors. The structural and morphological characterizations of the as deposited Mn{sub 3}O{sub 4} films have been carried out by means of X-ray diffraction (XRD), Field Emission Scanning Electron Micrograph (FESEM), EDAX, Atomic Fore Microscopy (AFM) and Fourier Transform Infrared Spectrum (FTIR) analysis. The optical absorption and electrical resistivity measurements were carried out to investigate optical band gap and activation energy of Mn{sub 3}O{sub 4} films deposited by SILAR method. The optical band gap and activation energy of the as deposited film is found to be 2.70 and 0.14 eV respectively. The thermo-emf measurements of Mn{sub 3}O{sub 4} thin film confirm its p-type semiconducting nature. Highlights: Black-Right-Pointing-Pointer Nanostructured Mn{sub 3}O{sub 4} thin film is prepared by SILAR method at room temperature. Black-Right-Pointing-Pointer The film is nanocrystalline with orthorhombic structure of Mn{sub 3}O{sub 4}. Black-Right-Pointing-Pointer The XRD, FTIR, FESEM, EDX and AFM characterization confirms nanocrystalline nature. Black-Right-Pointing-Pointer Optical band gap, electrical resistivity and activation energy of film is reported. Black-Right-Pointing-Pointer A thermo-emf measurement confirms p-type conductivity of Mn{sub 3}O{sub 4} films.

Synthesis of nanocrystalline nickel-zinc ferrite (Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4}) thin films by chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Pawar, D.K. [Department of Chemistry, Shivaji University, Kolhapur 416 004 (M.S.) (India); Pawar, S.M. [Department of Materials Science and Engineering, Chonnam National University, 500 757 (Korea, Republic of); Patil, P.S. [Department of Physics, Shivaji University, Kolhapur 416 004 (M.S.) (India); Kolekar, S.S., E-mail: kolekarss2003@yahoo.co.in [Department of Chemistry, Shivaji University, Kolhapur 416 004 (M.S.) (India)

2011-02-24

Graphical abstract: Display Omitted Research highlights: > We have successfully synthesized nickel-zinc ferrite (Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4}) thin films on stainless steel substrates using a low temperature chemical bath deposition method. > The surface morphological study showed the compact flakes like morphology. > The as-deposited thin films are hydrophilic (10{sup o} < {theta} < 90{sup o}) whereas the annealed thin films are super hydrophilic ({theta} < 10{sup o}) in nature. > Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} thin films could be used in supercapacitor. - Abstract: The nickel-zinc ferrite (Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4}) thin films have been successfully deposited on stainless steel substrates using a chemical bath deposition method from alkaline bath. The films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), static water contact angle and cyclic voltammetry measurements. The X-ray diffraction pattern shows that deposited Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} thin films were oriented along (3 1 1) plane. The FTIR spectra showed strong absorption peaks around 600 cm{sup -1} which are typical for cubic spinel crystal structure. SEM study revealed compact flakes like morphology having thickness {approx}1.8 {mu}m after air annealing. The annealed films were super hydrophilic in nature having a static water contact angle ({theta}) of 5{sup o}.The electrochemical supercapacitor study of Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} thin films has been carried out in 6 M KOH electrolyte. The values of interfacial and specific capacitances obtained were 0.0285 F cm{sup -2} and 19 F g{sup -1}, respectively.

Compositional ratio effect on the surface characteristics of CuZn thin films

Science.gov (United States)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

Structural, morphological and optical properties of spray deposited Mn-doped CeO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G., E-mail: jp@ece.sastra.edu

2014-07-25

Highlights: • Spray deposited undoped and Mn-doped CeO{sub 2} thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO{sub 2} thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO{sub 2} films were studied. It was found that both the undoped and doped CeO{sub 2} films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO{sub 2} film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported.

Electrical transport properties of spray deposited transparent conducting ortho-Zn2SnO4 thin films

Science.gov (United States)

Ramarajan, R.; Thangaraju, K.; Babu, R. Ramesh; Joseph, D. Paul

2018-04-01

Ortho Zinc Stannate (Zn2SnO4) exhibits excellent electrical and optical properties to serve as alternate transparent electrode in optoelectronic devices. Here we have optimized ortho-Zn2SnO4 thin film by spray pyrolysis method. Deposition was done onto a pre-heated glass substrate at a temperature of 400 °C. The XRD pattern indicated films to be polycrystalline with cubic structure. The surface of films had globular and twisted metal sheet like morphologies. Films were transparent in the visible region with band gap around 3.6 eV. Transport properties were studied by Hall measurements at 300 K. Activation energies were calculated from Arrhenius's plot from temperature dependent electrical measurements and the conduction mechanism is discussed.

Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

CERN Document Server

Kodigala, Subba Ramaiah

2013-01-01

The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

International Nuclear Information System (INIS)

Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

2010-01-01

A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

Directory of Open Access Journals (Sweden)

Hongxia Wang

2011-01-01

Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

Surfactant assisted electrodeposition of MnO2 thin films: Improved supercapacitive properties

International Nuclear Information System (INIS)

Dubal, D.P.; Kim, W.B.; Lokhande, C.D.

2011-01-01

Highlights: → Effect of Triton X-100 on physico-chemical properties of MnO 2 films. → High supercapacitance of 345 F g -1 . → Charge-discharge, impedance spectroscopy. - Abstract: In order to obtain a high specific capacitance, MnO 2 thin films have been electrodeposited in the presence of a neutral surfactant (Triton X-100). These films were further characterized by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, field emission scanning electron microscopy (FESEM) and contact angle measurement. The XRD studies revealed that the electrodeposited MnO 2 films are amorphous and addition of Triton X-100 does not change its amorphous nature. The electrodeposited films of MnO 2 in the presence of the Triton X-100 possess greater porosity and hence greater surface area in relation to the films prepared in the absence of the surfactant. Wettability test showed that the MnO 2 film becomes superhydrophilic from hydrophilic due to Triton X-100. Supercapacitance properties of MnO 2 thin films studied by cyclic voltammetry, galvanostatic charge-discharge cycling and impedance spectroscopy showed maximum supercapacitance for MnO 2 films deposited in presence of Triton X-100 is 345 F g -1 .

Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

International Nuclear Information System (INIS)

Lin, Xianzhong; Kavalakkatt, Jaison; Kornhuber, Kai; Levcenko, Sergiu; Lux-Steiner, Martha Ch.; Ennaoui, Ahmed

2013-01-01

Cu 2 ZnSnS 4 (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se 2 due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu 3 SnS 4 and ZnS NPs and annealing in Ar/H 2 S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy

Red Emission of SrAl2O4:Mn4+ Phosphor for Warm White Light-Emitting Diodes

Science.gov (United States)

Chi, N. T. K.; Tuan, N. T.; Lien, N. T. K.; Nguyen, D. H.

2018-05-01

In this work, SrAl2O4:Mn4+ phosphor is prepared by co-precipitation. The phase structure, morphology, composition and luminescent performance of the phosphor are investigated in detail with x-ray diffraction, field emission scanning electron microscopy, steady-state photoluminescence (PL) spectra, and temperature-dependent PL measurements. The phosphor shows a strong red emission peak at ˜ 690 nm, which is due to the transition between electronic levels and the electric dipole transition 2Eg to 4A2g of Mn4+ ions located at the sites with D3d local symmetry. The sample doped with 0.04 mol.% Mn4+ exhibits intense red emission with high thermal stability and appropriate International Commission on Illumination (CIE) coordinates (x = 0.6959, y = 0.2737). It is also found that the phosphor absorption in an extended band from 250 nm to 500 nm has three peaks at 320 nm, 405 nm, and 470 nm, which match well with the emission band of ultraviolet (UV) lighting emission diode (LED) or blue LED chips. These results demonstrate that SrAl2O4:Mn4+ phosphor can play the role of activator in narrow red-emitting phosphor, which is potentially useful in UV (˜ 320 nm) or blue (˜ 460 nm) LED.

Experimental study of Pulsed Laser Deposited Cu2ZnSnS 4 (CZTS) thin films for photovoltaic applications

Science.gov (United States)

Nandur, Abhishek S.

Thin film solar cells are gaining momentum as a renewable energy source. Reduced material requirements (15 mum in total thickness) solar cells. Among the various thin film solar absorbers that have been proposed, CZTS (Cu2ZnSnS4) has become the subject of intense interest because of its optimal band gap (1.45 eV), high absorption coefficient (104 cm--1 ) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since films are deposited under high vacuum with excellent stoichiometry transfer from the target. Defect-free, near-stoichiometric poly-crystalline CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of fabrication parameters such as laser energy density, deposition time, substrate temperature and sulfurization (annealing in sulfur) on the surface morphology, composition and optical absorption of the CZTS thin films were examined. The results show that the presence of secondary phases, present both in the bulk and on the surface, affected the electrical and optical properties of the CZTS thin films and the CZTS based TFSCs. After selectively etching away the secondary phases with DIW, HCl and KCN, it was observed that their removal improved the performance of CZTS based TFSCs. Optimal CZTS thin films exhibited an optical band gap of 1.54 eV with an absorption coefficient of 4x10 4cm-1 with a low volume of secondary phases. A TFSC fabricated with the best CZTS thin film obtained from the experimental study done in this thesis showed a conversion efficiency of 6.41% with Voc = 530 mV, Jsc= 27.5 mA/cm2 and a fill factor of 0.44.

The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

International Nuclear Information System (INIS)

Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.; Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Koetschau, I.; Schock, H.-W.

2009-01-01

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu 2 ZnSnS 4 based thin film solar cells. A kesterite based solar cell (size 0.5 cm 2 ) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu 2 SnS 3 and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu 3 Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu 6 Sn 5 and Sn phases were detected. The formation mechanism of Cu 2 SnS 3 involves the binary sulphides Cu 2-x S and SnS 2 in the absence of the binary precursor phase Cu 6 Sn 5 . The presence of Cu 6 Sn 5 leads to a preferred formation of Cu 2 SnS 3 via the reaction educts Cu 2-x S and SnS 2 in the presence of a SnS 2 (Cu 4 SnS 6 ) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase

Properties of Mn0.4Zn0.6Fe2O4 and Mn0.6Zn0.4Fe2O4 as Nanocatalyst for Ammonia Production

Directory of Open Access Journals (Sweden)

Puspitasari Poppy

2017-01-01

Full Text Available Ammonia synthesis requires high pressure and high temperature process. Unfortunately, the capital intensive cost resulting low yield of ammonia by using recent catalyst which is iron oxide. Therefore, manganese zinc ferrite as a soft ferrite material will be introduced as a new nanocatalyst to enhance the ammonia yield. As a new nanocatalyst for ammonia production, study of comparasion two different concentration of MnZn Ferrite is very important. This paper will compare the yield of ammonia by using two different nanocatalyst which are Mn0.4Zn0.6Fe2O4 and Mn0.6Zn0.4Fe2O4. Both were synthesized by sol-gel method and has been characterize by using FESEM (morphology, XRD (phase identification, EDX (elemental analysis and TPR (oxide reduction. The ammonia was produce with and without magnetic field applied. The result shows that the ammonia yield is higher for Mn0.4Zn0.6Fe2O4 nanocatalyst than Mn0.6Zn0.4Fe2O4 by using magnetic field applied. 67.2% of yield has been achieved by using new nanocatalyst Mn0.6Zn0.4Fe2O4 and magnetic field applied at ambient environment.

Effects of Mn doping on the ferroelectric properties of PZT thin films

International Nuclear Information System (INIS)

Zhang Qi

2004-01-01

The effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on Pt/Ti/SiO 2 /Si substrates have been investigated. The composition of the PZT and Mn doping level are Pb(Zr 0.3 Ti 0.7 ) 1-x Mn x O 3 (x = 0,0.2,0.5,1,2,4 mol%). The PZT thin films doped with a small amount of Mn 2+ (x ≤ 1) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. However, excessive additions of manganese made the fatigue behaviour worse. We propose that the addition of small amounts of Mn is able to reduce the oxygen vacancy concentration due to the combination of Mn 2+ and oxygen vacancies in PZT films, forming Mn 4+ ions. The interfacial layer between the Pt electrode and PZT films and Mn-doped PZT (x = 4) was detected by measuring the dielectric constant of thin films of different thickness. However, this interfacial layer was not detected in Mn-doped PZT (x = 1). These observations support the concept of the preferential electromigration of oxygen vacancies into sites in planes parallel to the electrodes, which is probably responsible for the hysteretic fatigue

A novel chemical synthesis and characterization of Mn{sub 3}O{sub 4} thin films for supercapacitor application

Energy Technology Data Exchange (ETDEWEB)

Dubal, D.P.; Dhawale, D.S.; Salunkhe, R.R. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S) (India); Pawar, S.M. [Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S) (India)

2010-05-01

Mn{sub 3}O{sub 4} thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), field emission scanning electron microscopy (FESEM), wettability test and optical absorption studies. The XRD pattern showed that the Mn{sub 3}O{sub 4} films exhibit tetragonal hausmannite structure. Formation of manganese oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.30 eV. Mn{sub 3}O{sub 4} film surface showed hydrophilic nature with water contact angle of 55{sup o}. The supercapacitive properties of Mn{sub 3}O{sub 4} thin film investigated in 1 M Na{sub 2}SO{sub 4} electrolyte showed maximum supercapacitance of 314 F g{sup -1} at scan rate 5 mV s{sup -1}.

Regulating effect of SiO2 interlayer on optical properties of ZnO thin films

International Nuclear Information System (INIS)

Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong

2013-01-01

ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays

Critical issues in enhancing brightness in thin film phosphors for flat-panel display applications

International Nuclear Information System (INIS)

Singh, R.K.; Chen, Z.; Kumar, D.; Cho, K.; Ollinger, M.

2002-01-01

Thin film phosphors have potential applications in field emission flat-panel displays. However, they are limited by the lower cathodoluminescent brightness in comparison to phosphor powders. In this paper, we have investigated the critical parameters that need to be optimized to increase the brightness of phosphor thin films. Specifically, we studied the role of surface roughness and optical properties of the substrate on the brightness of the phosphor films. Thin Y 2 O 3 :Eu phosphor films were deposited on various substrates (lanthanum aluminate, quartz, sapphire, and silicon) with thicknesses varying from 50 to 500 nm. A model that accounts for diffuse and specular or scattering effects has been developed to understand the effects of the microstructure on the emission characteristics of the cathodoluminescent films. The results from the model show that both the optical properties of the substrate and the surface roughness of the films play a critical role in controlling the brightness of laser deposited phosphor films

Preparation and optical properties of ZnGa{sub 2}O{sub 4}:Cr{sup 3+} thin films derived by sol-gel process

Energy Technology Data Exchange (ETDEWEB)

Zhang Weiwei [School of Physics and Nuclear Energy Engineering, Beihang University, No. 37 XueYuan Road, HaiDian District, Beijing 100191 (China); Zhang Junying, E-mail: zjy@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, No. 37 XueYuan Road, HaiDian District, Beijing 100191 (China); Li Yuan; Chen Ziyu; Wang Tianmin [School of Physics and Nuclear Energy Engineering, Beihang University, No. 37 XueYuan Road, HaiDian District, Beijing 100191 (China)

2010-05-01

ZnGa{sub 2}O{sub 4}:Cr{sup 3+} thin films with bright red emission were synthesized using a sol-gel process, characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and UV-vis and fluorescence spectrophotometry measurements. Effects of calcining temperature, film thickness, calcining duration and substrates on the crystal structure and photoluminescent property have been investigated. It is found that the crystallinity, Ga/Zn ratio and band gap energy (E{sub g}) are significant factors influencing optical characteristics, while the nature of substrates affect the surface morphologies of ZnGa{sub 2}O{sub 4}:Cr{sup 3+} thin films.

Photoluminescence study of epitaxially grown ZnSnAs2:Mn thin films

International Nuclear Information System (INIS)

Mammadov, E; Haneta, M; Toyota, H; Uchitomi, N

2011-01-01

The photoluminescence (PL) properties of heavily Mn-doped ZnSnAs 2 layers epitaxially grown on nearly lattice-matched semi-insulating InP substrates are studied. PL spectra are obtained for samples with Mn concentrations of 5, 12 and 24 mol% relative to the combined concentrations of Zn and Sn. A broad emission band centered at ∼ 1 eV is detected for Mn-doped layers at room temperature. The emission is a intense broad asymmetric line at low temperatures. The line is reconstructed by superposition of two bands with peak energies of ∼ 0.99 and 1.07 eV, similar to those reported for InP. These bands are superimposed onto a 1.14 eV band with well-resolved phonon structure for the layer doped with 12 % Mn. Recombination mechanism involving the split-off band of the ZnSnAs 2 is suggested. Temperature dependence of integrated intensities of the PL bands indicates to thermally activated emission with activation energies somewhat different from those found for InP. Mn substitution at cationic sites increases the concentration of holes which may act as recombination centers. Recombination to the holes bound to Mn ions with the ground state located below the top of the valence band has been proposed as a possible PL mechanism.

A photochemical proposal for the preparation of ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films from β-diketonate complex precursors

Energy Technology Data Exchange (ETDEWEB)

Cabello, G., E-mail: gerardocabelloguzman@hotmail.com [Departamento de Ciencias Básicas, Facultad de Ciencias, Universidad del Bío-Bío, Chillán (Chile); Lillo, L.; Caro, C.; Seguel, M.; Sandoval, C. [Departamento de Ciencias Básicas, Facultad de Ciencias, Universidad del Bío-Bío, Chillán (Chile); Buono-Core, G.E. [Instituto de Química, Pontificia Universidad Católica de Valparaíso, Valparaíso (Chile); Chornik, B.; Flores, M. [Deparamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Santiago 8370415 (Chile)

2016-05-15

Highlights: • ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were prepared by photo-chemical method. • The Zn(II), Mg(II) and Al(III) β-diketonate complexes were used as precursors. • The photochemical reaction was monitored by UV–vis and FT-IR spectroscopy. • The results reveal spinel oxide formation and the generation of intermediate products. - Abstract: ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were grown on Si(100) and quartz plate substrates using a photochemical method in the solid phase with thin films of β-diketonate complexes as the precursors. The films were deposited by spin-coating and subsequently photolyzed at room temperature using 254 nm UV light. The photolysis of these films results in the deposition of metal oxide thin films and fragmentation of the ligands from the coordination sphere of the complexes. The obtained samples were post-annealed at different temperatures (350–1100 °C) for 2 h and characterized by FT-Infrared spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force miscroscopy (AFM), and UV–vis spectroscopy. The results indicate the formation of spinel-type structures and other phases. These characteristics determined the quality of the films, which were obtained from the photodeposition of ternary metal oxides.

First report on synthesis of ZnFe_2O_4 thin film using successive ionic layer adsorption and reaction: Approach towards solid-state symmetric supercapacitor device

International Nuclear Information System (INIS)

Raut, Shrikant S.; Sankapal, Babasaheb R.

2016-01-01

Highlights: • First report on synthesis of ZnFe_2O_4 thin film using SILAR method. • ZnFe_2O_4 electrode yields the specific capacitance of 471 Fg"−"1 at a scan rate of 5 mV s"−"1 in 1 M NaOH aqueous solution. • Solid-state symmetric supercapacitor device based on ZnFe_2O_4 sandwiched in polyvinyl alcohol (PVA)–LiClO_4 gel electrolyte exhibits voltage windows of 1.0 V. • ZnFe_2O_4-SSS supercapacitor device shows good energy and power density with long cycle life. - Abstract: ZnFe_2O_4 thin film has been synthesized by a simple and low cost successive ionic layer adsorption and reaction (SILAR) method without the use of surfactant or template. The nanoplate composed of nanoparticles with porous surface morphology has been revealed which is beneficial towards supercapacitor application. Formed ZnFe_2O_4 thin film has been tested as an electrode material for supercapacitor through electrochemical analysis. First attempt for SILAR synthesized ZnFe_2O_4 thin film exhibited a specific capacitance of 471 Fg"−"1 at a scan rate of 5 mVs"−"1 in 1 M NaOH aqueous solution. Further, ZnFe_2O_4 solid-state symmetric (SSS) supercapacitor device demonstrated voltage window of 1.0 V with specific capacitance of 32 Fg"−"1, energy density of 4.47 Whkg"−"1 and power density of 277 Wkg"−"1 at 1 Ag"−"1 current density. Such high performance capacitive behavior indicates ZnFe_2O_4 thin film is promising and low cost electrode material towards energy storage devices for various portable electronic systems.

Surfactant assisted electrodeposition of MnO{sub 2} thin films: Improved supercapacitive properties

Energy Technology Data Exchange (ETDEWEB)

Dubal, D.P. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Kim, W.B. [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India)

2011-10-13

Highlights: > Effect of Triton X-100 on physico-chemical properties of MnO{sub 2} films. > High supercapacitance of 345 F g{sup -1}. > Charge-discharge, impedance spectroscopy. - Abstract: In order to obtain a high specific capacitance, MnO{sub 2} thin films have been electrodeposited in the presence of a neutral surfactant (Triton X-100). These films were further characterized by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, field emission scanning electron microscopy (FESEM) and contact angle measurement. The XRD studies revealed that the electrodeposited MnO{sub 2} films are amorphous and addition of Triton X-100 does not change its amorphous nature. The electrodeposited films of MnO{sub 2} in the presence of the Triton X-100 possess greater porosity and hence greater surface area in relation to the films prepared in the absence of the surfactant. Wettability test showed that the MnO{sub 2} film becomes superhydrophilic from hydrophilic due to Triton X-100. Supercapacitance properties of MnO{sub 2} thin films studied by cyclic voltammetry, galvanostatic charge-discharge cycling and impedance spectroscopy showed maximum supercapacitance for MnO{sub 2} films deposited in presence of Triton X-100 is 345 F g{sup -1}.

Enhancing the photovoltaic performance of CdTe/CdS solar cell via luminescent downshifting using K{sub 2}SiF{sub 6}:Mn{sup 4+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Talewar, R. A., E-mail: talewarrupesh@gmail.com; Joshi, C. P. [Physics Department, Shri Ramdeobaba College of Engineering & Management, Katol Road, Nagpur 440013 (India); Moharil, S. V. [Department of Physics, Rashtrasant Tukadoji Maharaj Nagpur University, Nagpur 440010 (India)

2016-05-23

The efficiency of CdTe/CdS solar cell can be significantly improved by using luminescent down-shifting material on their front surface. Taking this into account a red emitting phosphor K{sub 2}Si{sub 1-x}F{sub 6}:xMn{sup 4+} (x=10 to 25 mol %) has been synthesized through wet chemical method. The as-synthesized materials were characterized by powder x-ray diffraction (XRD) and photoluminescence (PL) techniques. The photoluminescence studies of K{sub 2}SiF{sub 6}:Mn{sup 4+} revealed enhancement in the emission intensity, when Mn{sup 4+} concentration was increased from 10 mol % to 25 mol %. This red emitting phosphor efficiently absorbs the photons typically in the region 300-500 nm and re-emits in the region where the photovoltaic device exhibits significantly better response. The results show the possibility of enhancing the photovoltaic conversion efficiency of CdTe thin film solar cell by modifying the absorption spectra and utilising the energy in the UV-blue part of the solar spectrum.

In-situ XRD study of alloyed Cu2ZnSnSe4-CuInSe2 thin films for solar cells

International Nuclear Information System (INIS)

Hartnauer, Stefan; Wägele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland

2015-01-01

We investigate the growth of Cu 2 ZnSnSe 4 -CuInSe 2 (CZTISe) thin films using a 2-stage (Cu-rich/Cu-free) co-evaporation process under simultaneous application of in-situ angle dispersive X-ray diffraction (XRD). In-situ XRD allows monitoring the phase formation during preparation. A variation of the content of indium in CZTISe leads to a change in the lattice constant. Single phase CZTISe is formed in a wide range, while at high In contents a phase separation is detected. Because of different thermal expansion coefficients, the X-ray diffraction peaks of ZnSe and CZTISe can be distinguished at elevated substrate temperatures. The formation of ZnSe appears to be inhibited even for low indium content. In-situ XRD shows no detectable sign for the formation of ZnSe. First solar cells of CZTISe have been prepared and show comparable performance to CZTSe. - Highlights: • In-situ XRD study of two-stage co-evaporated Cu 2 ZnSnSe 4 -CuInSe 2 alloyed thin films. • No detection of ZnSe with in-situ XRD due to Indium incorporation • Comparable efficiency of alloyed solar cells

Effect of alkali elements in thin-film Cu2ZnSnS4 solar cells produced by solution-processing

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Canulescu, Stela; Schou, Jørgen

The effect of adding Li, Na, and K to Cu2ZnSnS4 nanoparticle thin-film absorber layers has been investigated. Among them, K is found to enhance grain growth as well as increase the photoluminescence of the films....

Mechanical responses of Zn{sub 1-x}Mn{sub x}O epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Chang, Teng-Ruey [Department of Industrial Engineering and Management, Nan Kai University of Techonology, Nantou 54243, Taiwan (China); Tsai, Chien-Huang, E-mail: chtsai12@gmail.com [Department of Automation Engineering, Nan Kai University of Techonology, Nantou 54243, Taiwan (China)

2011-10-15

In this study, we used nanoindentation to investigate the effect of the doping of Mn into ZnO buffer layers on the epitaxial growth of ZnO through plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. We characterized the variation of the mechanical properties of Zn{sub 1-x}Mn{sub x}O alloys as a function of the Mn content in the range (x) from 0 to 0.16, as well as analyzing their microstructures using high-resolution transmission electron microscopy. The presence of the Mn-doped ZnO buffer layer enhanced the nanomechanical properties of the ZnO epilayers significantly. From their Berkovich indenter responses, plots of the Young's modulus (E) and hardness (H) of these films revealed that the value of E increased relatively steadily upon increasing the Mn composition, whereas the value of H reached its maximum when x was equal to 0.16. This discrepancy suggests that Zn{sub 1-x}Mn{sub x}O epilayers of higher Mn contents had higher shear resistances.

Facile Synthesis of Novel Nanostructured MnO2Thin Films and Their Application in Supercapacitors

Directory of Open Access Journals (Sweden)

Xia H

2009-01-01

Full Text Available Abstract Nanostructured α-MnO2thin films with different morphologies are grown on the platinum substrates by a facile solution method without any assistance of template or surfactant. Microstructural characterization reveals that morphology evolution from dandelion-like spheres to nanoflakes of the as-grown MnO2is controlled by synthesis temperature. The capacitive behavior of the MnO2thin films with different morphologies are studied by cyclic voltammetry. The α-MnO2thin films composed of dandelion-like spheres exhibit high specific capacitance, good rate capability, and excellent long-term cycling stability.

Effect of Zn/Sn molar ratio on the microstructural and optical properties of Cu2Zn1-xSnxS4 thin films prepared by spray pyrolysis technique

Science.gov (United States)

Thiruvenkadam, S.; Prabhakaran, S.; Sujay Chakravarty; Ganesan, V.; Vasant Sathe; Santhosh Kumar, M. C.; Leo Rajesh, A.

2018-03-01

Quaternary kesterite Cu2ZnSnS4 (CZTS) compound is one of the most promising semiconductor materials consisting of abundant and eco-friendly elements for absorption layer in thin film solar cells. The effect of Zn/Sn ratio on Cu2Zn1-xSnxS4 (0 ≤ x ≤ 1) thin films were studied by deposited by varying molar volumes in the precursor solution of zinc and tin was carried out in proportion of (1-x) and x respectively onto soda lime glass substrates kept at 573 K by using chemical spray pyrolysis technique. The GIXRD pattern revealed that the films having composites of Cu2ZnSnS4, Cu2SnS3, Sn2S3, CuS and ZnS phases. The crystallinity and grain size were found to increase by increasing the x value and the preferential orientation along (103), (112), (108) and (111) direction corresponding to CZTS, Cu2SnS3, CuS, and ZnS phases respectively. Micro-Raman spectra exposed a prominent peak at 332 cm-1 corresponding to the CZTS phase. Atomic force microscopy was employed to study the grain size and roughness of the deposited thin films. The optical band gap was found to lie between 1.45 and 2.25 eV and average optical absorption coefficient was found to be greater than 105 cm-1. Hall measurements exhibited that all the deposited Cu2Zn1-xSnxS4 films were p type and the resistivity lies between 10.9 ×10-2Ωcm and 149.6 × 10-2Ωcm .

Structural and optical properties of ZnO–SnO{sub 2} mixed thin films deposited by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Tharsika, T., E-mail: tharsika@siswa.um.edu.my; Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my; Sabri, M.F.M., E-mail: faizul@um.edu.my

2014-05-02

Nanocrystalline ZnO–SnO{sub 2} mixed thin films were deposited by the spray pyrolysis technique at various substrate temperatures during deposition. The mixed films were prepared in the range of 20.9 at.% to 73.4 at.% by altering the Zn/(Sn + Zn) atomic ratio in the starting solution. Morphology, crystal structures, and optical properties of the films were characterized by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultraviolet–visible and photoluminescence (PL) spectroscopy. XRD analysis reveals that the crystallinity of the Sn-rich mixed thin films increases with increasing substrate temperatures. FESEM images show that the grain size of mixed thin films is smaller compared to that of pure ZnO and SnO{sub 2} thin films. A drop in the thickness and optical bandgap of the film was observed for films fabricated at high temperatures, which coincided with the increased crystallinity of the films. The average optical transmission of mixed thin films increased from 70% to 95% within the visible range (400–800 nm) as the substrate temperature increases. Optical bandgap of the films was determined to be in the range of 3.21–3.96 eV. The blue shift in the PL spectra from the films was supported by the fact that grain size of the mixed thin films is much smaller than that of the pure ZnO and SnO{sub 2} thin films. Due to the improved transmission and reduced grain size, the ZnO–SnO{sub 2} mixed thin films can have potential use in photovoltaic and gas sensing applications. - Highlights: • ZnO–SnO{sub 2} mixed thin films were deposited on glass substrate by spray pyrolysis. • Crystallinity of the thin films increases with substrate temperature. • Grain size of the mixed thin films is smaller than that of the pure thin films. • Reduction of grain size depends on mixed atomic ratios of precursor solution. • Optical band gap of films could be engineered by changing substrate temperature.

Crystal structure determination of solar cell materials: Cu2ZnSnS4 thin films using X-ray anomalous dispersion

International Nuclear Information System (INIS)

Nozaki, Hiroshi; Fukano, Tatsuo; Ohta, Shingo; Seno, Yoshiki; Katagiri, Hironori; Jimbo, Kazuo

2012-01-01

Highlights: ► Cu 2 ZnSnS 4 thin films as a solar cell material were synthesized. ► The wavelength dependences of the diffraction intensity were measured. ► The crystal structures were clearly identified as kesterite structure for all samples. ► Crystal structure analysis revealed that the atomic compositions were Cu/(Zn + Sn) = 0.97 and Zn/Sn = 1.42 for the sample synthesized using stoichiometric amount of starting materials. - Abstract: The crystal structure of Cu 2 ZnSnS 4 (CZTS) thin films fabricated by vapor-phase sulfurization was determined using X-ray anomalous dispersion. High statistic synchrotron radiation X-ray diffraction data were collected from very small amounts of powder. By analyzing the wavelength dependencies of the diffraction peak intensities, the crystal structure was clearly identified as kesterite. Rietveld analysis revealed that the atomic composition deviated from stoichiometric composition, and the compositions were Cu/(Zn + Sn) = 0.97, and Zn/Sn = 1.42.

Investigation of optimum annealing parameters for formation of dip coated Cu{sub 2}ZnSnS{sub 4} thin film

Energy Technology Data Exchange (ETDEWEB)

Chaudhari, Sushmita; Kannan, P.K.; Dey, Suhash R., E-mail: suhash@iith.ac.in

2016-08-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) is most attractive absorber material for inorganic solar cell applications because of its cost effective and ecofriendly nature. To obtain phase pure CZTS film, effects of annealing parameters on synthesis of CZTS thin film are investigated. CZTS films are deposited through dip coating method followed by heat treatment to form crystalline CZTS thin films. Factors influencing the crystallinity, morphology and composition of the films such as annealing temperature, time, rate and atmosphere are studied through X-Ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy and Energy Dispersive X-Ray Spectroscopy. After numerous experiments of synthesis of CZTS in different annealing conditions and its characterization, it is observed that 1.4 eV band gap CZTS thin film of kesterite structure is obtained by annealing the film in nitrogen atmosphere for 60 min at 300 °C with 10 °C/min ramping rate. - Highlights: • Dip coated Cu{sub 2}ZnSnS{sub 4} film is developed using non-hydrazine based precursor solution. • Optimum annealing condition to achieve best crystalline film is studied. • Optimal condition is 300 °C in N{sub 2} atmosphere for 60 min at 10 °C/min ramping rate. • Bandgap of prepared films is 1.4 eV, suitable for solar cell applications.

Influence of deposition parameters and annealing on Cu{sub 2}ZnSnS{sub 4} thin films grown by SILAR

Energy Technology Data Exchange (ETDEWEB)

Patel, Kinjal; Shah, Dimple V. [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Kheraj, Vipul, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2015-02-15

Highlights: • Optimisation of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur.

Photoluminescence and cathodoluminescence properties of green emitting SrGa2{S}4 : Eu2+ thin film

Science.gov (United States)

Chartier, Céline; Benalloul, Paul; Barthou, Charles; Frigerio, Jean-Marc; Mueller, Gerd O.; Mueller-Mach, Regina; Trottier, Troy

2002-02-01

Photoluminescence and cathodoluminescence properties of SrGa2S4 : Eu2+ thin films prepared by reactive RF magnetron sputtering are investigated. Luminescence performances of the phosphor in the thin film form are compared to those of powder samples: the brightness efficiency of thin films is found to be about 30% of the efficiency of powder at low current density. A ratio higher than 40% is expected at higher current density. Thin film screens for FEDs will become a positive alternative to powder screens provided that film quality and light extraction could be improved by optimization of thickness and deposition parameters.

Structural and luminescence properties of SrAl{sub 2}O{sub 4}:Eu{sup 2+},Dy{sup 3+},Nd{sup 3+} phosphor thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Wako, A.H., E-mail: wakoah@ufs.ac.za [Department of Physics, University of the Free State, QwaQwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Dejene, F.B. [Department of Physics, University of the Free State, QwaQwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA-9300 (South Africa)

2016-01-01

Thin films of Eu{sup 2+} doped and Dy{sup 3+},Nd{sup 3+} co-doped Strontium Aluminate (SrAl{sub 2}O{sub 4}:Eu{sup 2+},Dy{sup 3+},Nd{sup 3+}) phosphors were grown on Si(100) substrates by a pulsed laser deposition (PLD) technique using a 266 nm Nd:YAG pulsed laser under varying substrate temperature and the working atmosphere during the film deposition process. The effect of substrate temperatures and argon partial pressure on the structure and luminescence properties of the as-deposited SrAl{sub 2}O{sub 4}:Eu{sup 2+},Dy{sup 3+},Nd{sup 3+} phosphor thin films were analysed. XRD patterns showed that with increasing substrate temperature and argon partial pressure the peaks in the direction (220) shifted to the lower 2-theta angles. Photoluminescence (PL) data collected in air at room temperature revealed a slight shift in the peak wavelength of the PL spectra observed from the thin films when compared to the PL spectra of the phosphor in powder form, which is probably due to a change in the crystal field. The PL intensity of the samples was highest for 100 °C substrate temperature and 20 mTorr argon partial pressure. Due to this, the effect of argon partial pressure was studied at a constant substrate temperature of 100 °C while the effect of Substrate temperatures recorded at 20 mTorr argon pressure respectively.

Structural transformation of sputtered o-LiMnO2 thin-film cathodes induced by electrochemical cycling

International Nuclear Information System (INIS)

Fischer, J.; Chang, K.; Ye, J.; Ulrich, S.; Ziebert, C.; Music, D.; Hallstedt, B.; Seifert, H.J.

2013-01-01

Orthorhombic LiMnO 2 (o-LiMnO 2 ) thin films were produced by non-reactive r.f. magnetron sputtering in combination with thermal post-annealing. Oxide phase formation was investigated by X-ray diffraction and Raman spectroscopy. In order to assign the X-ray signals and estimate the grain size, a simulation of the diffraction pattern was performed and compared with experimental data. The density of the films was determined to be 3.39 g/cm 3 using X-ray reflectivity. Electrochemical characterization was carried out by galvanostatic cycling and cyclic voltammetry of Li/o-LiMnO 2 half cells. There are distinct redox reactions at approx. 3 V and 4 V, whereas the latter splits into multiple peaks. Using ab initio calculations and thermodynamic models, Gibbs energies of o-LiMnO 2 and c-LiMn 2 O 4 were determined. The relation between these energies explains the irreversible phase transformation that has been observed during the cycling of the Li/o-LiMnO 2 half cell. - Highlights: • Quantitative, thermodynamic modeling of the o-LiMnO 2 /c-LiMn 2 O 4 phase transformation • First CV-investigations on magnetron sputtered nanocrystalline o-LiMnO 2 thin films • Synthesis of o-LiMnO 2 planar model systems for protective coating and SEI development

Cu{sub 2}ZnSnS{sub 4} thin films by simple replacement reaction route for solar photovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Tiwari, Devendra, E-mail: devendratiwari.rnd@ecchanga.ac.in [Dr. K. C. Patel Research and Development Centre, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421 (India); Chaudhuri, Tapas K. [Dr. K. C. Patel Research and Development Centre, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421 (India); Ray, Arabinda [P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421 (India); Tiwari, Krishan Dutt [Powerdeal Energy Systems - India, Private Limited, Nashik 422010, Maharashtra (India)

2014-01-31

A process for deposition of Cu{sub 2}ZnSnS{sub 4} (CZTS) films using replacement of Zn{sup 2+} in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 10{sup 17} cm{sup −3} and 1.4 cm{sup 2}V{sup −1} s{sup −1} respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO{sub 2}:In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm{sup 2}, respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region. - Highlights: • Pure kesterite Cu{sub 2}ZnSnS{sub 4} thin films deposited by replacement reaction route • Energy band gap of films is 1.45 eV. • p-type films with conductivity of 4.6 S/cm and mobility of 1.4 cm{sup 2} S{sup −1} V{sup −1} • Fabrication of Graphite/Cu{sub 2}ZnSnS{sub 4}/CdS/ZnO/SnO{sub 2}:In/Glass solar cell • Solar cell delivered efficiency of 6.17% with high fill factor of 0.62.

Optical constants correlated electrons-spin of micro doughnuts of Mn-doped ZnO films

CSIR Research Space (South Africa)

Nkosi, SS

2013-09-01

Full Text Available Diluted magnetic semiconductor (DMS) Mn:ZnO thin films with “ring-like or doughnut-like” structures were grown using aerosol spray pyrolysis for 20 and 30 min. Electron paramagnetic resonance revealed the ferromagnetic ordering which varies with Mn...

The crystallisation of Cu{sub 2}ZnSnS{sub 4} thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Schurr, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany)], E-mail: schurr@krist.uni-erlangen.de; Hoelzing, A.; Jost, S.; Hock, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin (Germany); Ennaoui, A.; Lux-Steiner, M. [Heterogeneous Material Systems SE II, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany); Weber, A.; Koetschau, I.; Schock, H.-W. [Technology SE III, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany)

2009-02-02

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu{sub 2}ZnSnS{sub 4} based thin film solar cells. A kesterite based solar cell (size 0.5 cm{sup 2}) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu{sub 2}SnS{sub 3} and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu{sub 3}Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu{sub 6}Sn{sub 5} and Sn phases were detected. The formation mechanism of Cu{sub 2}SnS{sub 3} involves the binary sulphides Cu{sub 2-x}S and SnS{sub 2} in the absence of the binary precursor phase Cu{sub 6}Sn{sub 5}. The presence of Cu{sub 6}Sn{sub 5} leads to a preferred formation of Cu{sub 2}SnS{sub 3} via the reaction educts Cu{sub 2-x}S and SnS{sub 2} in the presence of a SnS{sub 2}(Cu{sub 4}SnS{sub 6}) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase.

Influence of S/Mn molar ratio on the morphology and optical property of γ-MnS thin films prepared by microwave hydrothermal

International Nuclear Information System (INIS)

Yu, Xin; Li-yun, Cao; Jian-feng, Huang; Jia, Liu; Jie, Fei; Chun-yan, Yao

2013-01-01

Highlights: ► The influence of the precursor solution molar ratio of S/Mn. ► The degree of orientation of the γ-MnS film decrease slightly with increasing the S/Mn from 2.0 to 4.0. ► Film quality is strongly affected by the initial nucleation. ► The absorption edge obviously shifts to a higher wavelength with the increase of the S/Mn molar ratio from 2.0 to 4.0. - Abstract: Well crystallized γ-MnS thin films were successfully synthesized at low temperature and short processing time via a novel microwave hydrothermal (M-H) process without any complexing agent by using manganese chloride and thioacetamide as source materials. The influence of different S/Mn molar ratio in the precursor solution on the phase compositions, morphologies and optical properties of the as-deposited films was investigated. The as-deposited γ-MnS thin films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and ultraviolet–visible (UV–vis). Results show that the wurtzite phase γ-MnS thin films with good crystallization can be achieved when S/Mn molar ratio is controlled at 2.0–4.0. The deposited γ-MnS thin films exhibit (1 0 0) orientation growth with the thickness of 300–500 nm. With the increase of S/Mn molar ratio from 2.0 to 4.0, the orientation growth is weakened while the dense and uniform of the as-deposited γ-MnS thin films are obviously improved and the corresponding band gap of the thin films increase from 3.88 to 3.97 eV.

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Araki, Hideaki; Kubo, Yuki; Jimbo, Kazuo; Maw, Win Shwe; Katagiri, Hironori; Yamazaki, Makoto; Oishi, Koichiro; Takeuchi, Akiko [Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, Niigata 940-8532 (Japan)

2009-05-15

Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were prepared by sulfurization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were deposited on Mo-coated glass substrates in a one-step process from an electrolyte containing copper (II) sulfate pentahydrate, zinc sulfate heptahydrate, tin (II) chloride dehydrate and tri-sodium citrate dehydrate. The precursors were sulfurized by annealing with sulfur at temperatures of 580 C and 600 C in an N{sub 2} atmosphere. X-ray diffraction peaks attributable to CZTS were detected in the sulfurized films. Photovoltaic cells with the structure glass/Mo/CZTS/ CdS/ZnO:Al/Al were fabricated using the CZTS films by sulfurizing the electrodeposited precursors. The best photovoltaic cell performance was obtained with Zn-rich samples. An open-circuit voltage of 540 mV, a short-circuit current of 12.6 mA/cm{sup 2} and an efficiency of 3.16% were achieved. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Analysis of the structure, particle morphology and photoluminescent properties of ZnS:Mn2+ nanoparticulate phosphors

CSIR Research Space (South Africa)

Raleaooa, PV

2018-01-01

Full Text Available stream_source_info Raleaooa_20160_2018.pdf.txt stream_content_type text/plain stream_size 1286 Content-Encoding UTF-8 stream_name Raleaooa_20160_2018.pdf.txt Content-Type text/plain; charset=UTF-8 Optik - International... journal for Light and Electron Optics Analysis of the structure, particle morphology and photoluminescent properties of ZnS:Mn2+ nanoparticulate phosphors Raleaooa PV Roodt A Mhlongo GH Motaung DE Ntwaeaborwa OM ABSTRACT: The structure...

The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

Science.gov (United States)

Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

2016-04-01

Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

Preferential orientation relationships in Ca2MnO4 Ruddlesden-Popper thin films

International Nuclear Information System (INIS)

Lacotte, M.; David, A.; Prellier, W.; Rohrer, G. S.; Salvador, P. A.

2015-01-01

A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca 2 MnO 4 Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr 2 TiO 4 substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship (OR) for each substrate-film grain pair. Two preferred epitaxial ORs accounted for more than 90% of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell OR ([100][001] film ∥ [100][001] substrate , or OR1) accounted for approximately 30% of each film. The OR that accounted for 60% of each film ([100][001] film ∥ [100][010] substrate , or OR2) corresponds to a rotation from OR1 by 90° about the a-axis. OR2 is strongly favored for substrate orientations in the center of the stereographic triangle, and OR1 is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While OR1 should be lower in energy, the majority observation of OR2 implies kinetic hindrances decrease the frequency of OR1. Persistent grain over grain growth and the absence of variations of the OR frequencies with thickness implies that the growth competition is finished within the first few nm, and local epitaxy persists thereafter during growth

Effect of sulfurization temperature on the property of Cu2ZnSnS4 thin film by eco-friendly nanoparticle ink method

Science.gov (United States)

Wang, Wei; Shen, Honglie; Yao, Hanyu; Shang, Huirong; Tang, ZhengXia; Li, Yufang

2017-09-01

Cu2ZnSnS4 (CZTS) thin films were fabricated by a low-cost nanoparticle ink method. The eco-friendly hydrophilic CZTS nanoparticles were mixed with low-cost n-propanol to form nanoparticle ink. To improve crystallinity and remove oxygen element, the CZTS thin films were sulfurized further. The effects of sulfurization temperature on the structure, morphologies, and photovoltaic performances of CZTS thin films were investigated. The results showed that the crystallinity of CZTS thin film was improved with increasing sulfurization temperature. The surface morphology studies demonstrated the formation of compact and homogenous CZTS thin film at a sulfurization temperature of 600 °C. By optimizing thickness of CZTS thin film, the CZTS thin-film solar cell with an optimal efficiency of 2.1% was obtained.

Electrodeposition synthesis and electrochemical properties of nanostructured γ-MnO 2 films

Science.gov (United States)

Chou, Shulei; Cheng, Fangyi; Chen, Jun

The thin films of carambola-like γ-MnO 2 nanoflakes with about 20 nm in thickness and at least 200 nm in width were prepared on nickel sheets by combination of potentiostatic and cyclic voltammetric electrodeposition techniques. The as-prepared MnO 2 nanomaterials, which were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), were used as the active material of the positive electrode for primary alkaline Zn/MnO 2 batteries and electrochemical supercapacitors. Electrochemical measurements showed that the MnO 2 nanoflake films displayed high potential plateau (around 1.0 V versus Zn) in primary Zn/MnO 2 batteries at the discharge current density of 500 mA g -1 and high specific capacitance of 240 F g -1 at the current density of 1 mA cm -2. This indicated the potential application of carambola-like γ-MnO 2 nanoflakes in high-power batteries and electrochemical supercapacitors. The growth process for the one- and three-dimensional nanostructured MnO 2 was discussed on the basis of potentiostatic and cyclic voltammetric techniques. The present synthesis method can be extended to the preparation of other nanostructured metal-oxide films.

Study and fabrication of ZnNb2O6 thin films by sol-gel method

International Nuclear Information System (INIS)

Hsu, Cheng-Hsing; Yang, Pai-Chuan; Yang, Hsi-Wen; Yan, Shu-Fong; Tung, Hsin-Han

2011-01-01

Zinc niobium oxide (ZnNb 2 O 6 ) thin films were grown on ITO/glass substrate by sol-gel process. Microstructure and surface morphology of the ZnNb 2 O 6 thin films have been studied by X-ray diffraction and scanning electron microscopy. Optical properties of the ZnNb 2 O 6 thin films were obtained by UV-visible recording spectrophotometer. The dependence of the microstructure, optical transmittance spectra, optical band gap on annealing temperature was also investigated.

Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

Science.gov (United States)

Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

2018-04-01

In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

Lattice positions of Sn in Cu2ZnSnS4 nanoparticles and thin films studied by synchrotron X-ray absorption near edge structure analysis

Science.gov (United States)

Zillner, E.; Paul, A.; Jutimoosik, J.; Chandarak, S.; Monnor, T.; Rujirawat, S.; Yimnirun, R.; Lin, X. Z.; Ennaoui, A.; Dittrich, Th.; Lux-Steiner, M.

2013-06-01

Lattice positions of Sn in kesterite Cu2ZnSnS4 and Cu2SnS3 nanoparticles and thin films were investigated by XANES (x-ray absorption near edge structure) analysis at the S K-edge. XANES spectra were analyzed by comparison with simulations taking into account anti-site defects and vacancies. Annealing of Cu2ZnSnS4 nanoparticle thin films led to a decrease of Sn at its native and defect sites. The results show that XANES analysis at the S K-edge is a sensitive tool for the investigation of defect sites, being critical in kesterite thin film solar cells.

Crystallographic Investigation of Ag (4 mol%) Doped ZnO (SZO) Thin Films by XRD

International Nuclear Information System (INIS)

Lwin Lwin Nwe; Sandar Dwe; Khant Khant Lin; Khin Thuzar; Than Than Win; Ko Ko Kyaw Soe

2008-03-01

Silver doped ZnO(SZO) thin films are prepared by sol-based method. The silver dopant concentration is 4 mol % in this case. XRD analysis carried out to determine, crystallographic properties such as lattice parameters and crystallite size of SZO thin films.

Tunable-color luminescence via energy transfer in NaCa13/18Mg5/18PO4:A (A = Eu2+/Tb3+/Mn2+, Dy3+) phosphors for solid state lighting.

Science.gov (United States)

Li, Kai; Fan, Jian; Mi, Xiaoyun; Zhang, Yang; Lian, Hongzhou; Shang, Mengmeng; Lin, Jun

2014-11-17

A series of NaCa13/18Mg5/18PO4(NCMPO):A (A = Eu(2+)/Tb(3+)/Mn(2+), Dy(3+)) phosphors have been prepared by the high-temperature solid-state reaction method. The X-ray diffraction (XRD) and Rietveld refinement, X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), cathodoluminescence (CL), decay lifetimes, and PL quantum yields (QYs) were utilized to characterize the phosphors. The pure crystalline phase of as-prepared samples has been demonstrated via XRD measurement and Rietveld refinements. XPS reveals that the Eu(2+)/Tb(3+)/Mn(2+) can be efficiently doped into the crystal lattice. NCMPO:Eu(2+)/Tb(3+)/Mn(2+) phosphors can be effectively excited under UV radiation, which show tunable color from purple-blue to red including white emission based on energy transfer from Eu(2+) to Tb(3+)/Mn(2+) ions. Under low-voltage electron beam bombardment, the NCMPO:A (A = Eu(2+)/Tb(3+)/Mn(2+), Dy(3+)) display their, respectively, characteristic emissions with different colors, and the CL spectrum of NCMPO:0.04Tb(3+) has the comparable intensity to the ZnO:Zn commercial product. In addition, the calculated CIE coordinate of NCMPO:0.04Tb(3+) (0.252, 0.432) is more saturated than it (0.195, 0.417). These results reveal that NCMPO:A (A = Eu(2+)/Tb(3+)/Mn(2+), Dy(3+)) may be potential candidate phosphors for WLEDs and FEDs.

One step electrodeposition of Cu2ZnSnS4 thin films in a novel bath with sulfurization free annealing

Science.gov (United States)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Pan, Youya; Guan, Jingyu

2017-04-01

Cu2ZnSnS4 (CZTS) is a quaternary kesterite compound with suitable band gap for thin film solar cells. In most electrodeposition-anneal routes, sulfurization is inevitable because the as-deposited film is lack of S. In this work, a novel green electrolyte was designed for synthesizing CZTS thin films with high S content. In the one-step electrodeposition, K4P2O7 and C7H6O6S were added to form complex with metallic ions in the electrolyte, which could attribute to co-deposition. The as-deposited film obtained high S content satisfying stoichiometry. After a sulfurization free annealing, the continuous and uniform CZTS thin film was obtained, which had pure kesterite structure and a suitable band gap of 1.53 eV. Electrodeposition mechanism investigation revealed that the K4P2O7 prevented the excessive deposition of Cu2+ and Sn2+. The C7H6O6S promoted the reduction of Zn2+. So the additives narrowed the co-deposition potentials of the metallic elements through a synergetic effect. They also promoted the reduction of S2O32- to ensure the co-deposition of the four elements and the stoichiometry. The sulfurization free annealing process can promote the commercialization of CZTS films and the successful design principle of environmental friendly electrolytes could be applied in other electrodeposition systems.

Double perovskite Ca2GdNbO6:Mn4+ deep red phosphor: Potential application for warm W-LEDs

Science.gov (United States)

Lu, Zuizhi; Huang, Tianjiao; Deng, Ruopeng; Wang, Huan; Wen, Lingling; Huang, Meixin; Zhou, Liya; Yao, Chunying

2018-05-01

A novel Mn4+-doped Ca2GdNbO6 (CGN) phosphor was prepared by high-temperature solid-state reaction. The crystal structure was investigated by X-ray diffraction patterns and unit cell structure. Mn4+ replaced the location of Nb5+ in the CGN lattice, and the value of energy gap (Egap) decreased from 2.16 eV to 1.13 eV, indicating that Mn4+ ions play a great influence on the absorption of CGN hosts. The broad excitation band from 250 nm to 550 nm matches well with commercial near-UV light emitting diodes, and the emission peak centered at 680 nm is due to 2E→4A2g transition in Mn4+ ions. The CIE chromaticity coordinates (0.698, 0.303) of CGN:Mn4+ phosphor was close to standard red color coordinates (0.666, 0.333). These investigations demonstrate CGN:Mn4+ phosphor as an efficient red phosphor for potential applications.

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

Liquid phase assisted grain growth in Cu2ZnSnS4 nanoparticle thin films by alkali element incorporation

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Canulescu, Stela; Schou, Jørgen

2018-01-01

The effect of adding LiCl, NaCl, and KCl to Cu2ZnSnS4 (CZTS) nanoparticle thin-film samples annealed in a nitrogen and sulfur atmosphere is reported. We demonstrate that the organic ligand-free nanoparticles previously developed can be used to produce an absorber layer of high quality. The films...

Nanocrystalline Cu{sub 2}ZnSnSe{sub 4} thin films for solar cells application: Microdiffraction and structural characterization

Energy Technology Data Exchange (ETDEWEB)

Quiroz, Heiddy P., E-mail: hpquirozg@unal.edu.co; Dussan, A., E-mail: adussanc@unal.edu.co [Departmento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá 11001 (Colombia)

2016-08-07

This work presents a study of the structural characterization of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films by X-ray diffraction (XRD) and microdiffraction measurements. Samples were deposited varying both mass (M{sub X}) and substrate temperature (T{sub S}) at which the Cu and ZnSe composites were evaporated. CZTSe samples were deposited by co-evaporation method in three stages. From XRD measurements, it was possible to establish, with increased Ts, the presence of binary phases associated with the quaternary composite during the material's growth process. A stannite-type structure in Cu{sub 2}ZnSnSe{sub 4} thin films and sizes of the crystallites varying between 30 and 40 nm were obtained. X-ray microdiffraction was used to investigate interface orientations and strain distributions when deposition parameters were varied. It was found that around the main peak, 2ϴ = 27.1°, the Cu{sub 1.8}Se and ZnSe binary phases predominate, which are formed during the subsequent material selenization stage. A Raman spectroscopy study revealed Raman shifts associated with the binary composites observed via XRD.

Structural transformation of sputtered o-LiMnO{sub 2} thin-film cathodes induced by electrochemical cycling

Energy Technology Data Exchange (ETDEWEB)

Fischer, J., E-mail: Julian.Fischer@kit.edu [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials – Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Chang, K. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 52074 Aachen (Germany); Ye, J.; Ulrich, S.; Ziebert, C. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials – Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Music, D.; Hallstedt, B. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 52074 Aachen (Germany); Seifert, H.J. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials – Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

2013-12-31

Orthorhombic LiMnO{sub 2} (o-LiMnO{sub 2}) thin films were produced by non-reactive r.f. magnetron sputtering in combination with thermal post-annealing. Oxide phase formation was investigated by X-ray diffraction and Raman spectroscopy. In order to assign the X-ray signals and estimate the grain size, a simulation of the diffraction pattern was performed and compared with experimental data. The density of the films was determined to be 3.39 g/cm{sup 3} using X-ray reflectivity. Electrochemical characterization was carried out by galvanostatic cycling and cyclic voltammetry of Li/o-LiMnO{sub 2} half cells. There are distinct redox reactions at approx. 3 V and 4 V, whereas the latter splits into multiple peaks. Using ab initio calculations and thermodynamic models, Gibbs energies of o-LiMnO{sub 2} and c-LiMn{sub 2}O{sub 4} were determined. The relation between these energies explains the irreversible phase transformation that has been observed during the cycling of the Li/o-LiMnO{sub 2} half cell. - Highlights: • Quantitative, thermodynamic modeling of the o-LiMnO{sub 2}/c-LiMn{sub 2}O{sub 4} phase transformation • First CV-investigations on magnetron sputtered nanocrystalline o-LiMnO{sub 2} thin films • Synthesis of o-LiMnO{sub 2} planar model systems for protective coating and SEI development.

Structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin film absorbers from ZnS and Cu{sub 3}SnS{sub 4} nanoparticle precursors

Energy Technology Data Exchange (ETDEWEB)

Lin, Xianzhong, E-mail: lin.xianzhong@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Kavalakkatt, Jaison [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Kornhuber, Kai; Levcenko, Sergiu [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Ennaoui, Ahmed, E-mail: ennaoui@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

2013-05-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se{sub 2} due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu{sub 3}SnS{sub 4} and ZnS NPs and annealing in Ar/H{sub 2}S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy.

Controllable synthesis and tunable luminescence of glass ceramic containing Mn2+:ZnAl2O4 and Pr3+:YF3 nano-crystals

International Nuclear Information System (INIS)

Yu, Yunlong; Li, Xiaoyan

2016-01-01

Highlights: • Glass ceramic containing ZnAl 2 O 4 and YF 3 nano-crystals is fabricated. • Mn 2+ and Pr 3+ are selectively incorporated into ZnAl 2 O 4 and YF 3 , respectively. • The luminescence color can be tuned by adjusting the excitation wavelength. - Abstract: Glass ceramic containing spinel ZnAl 2 O 4 :Mn 2+ and orthorhombic YF 3 :Pr 3+ nano-crystals has been successfully prepared by a melt-quenching technique. X-ray diffraction and transmission electron microscopy demonstrated that two nano-phases, i.e. ZnAl 2 O 4 and YF 3 , were homogeneously distributed among the glass matrix. Importantly, the selective incorporation of Pr 3+ ions into the Y 3+ nine-fold coordinated sites of YF 3 and the segregation of Mn 2+ dopants in the Zn 2+ tetrahedral sites of ZnAl 2 O 4 were confirmed based on the excitation/emission spectra and the crystal field calculation. Under blue light excitation, both Pr 3+ and Mn 2+ in the glass ceramic can be simultaneously excited, and emit red and green luminescence, respectively, owing to the suppression of energy transfer between them. The luminescence color of the obtained glass ceramic can be easily tuned by adjusting the excitation wavelength. These results indicate the potential application of the glass ceramic as converting phosphor to generate white-light after coupling with the blue LED chip.

A high power ZnO thin film piezoelectric generator

Science.gov (United States)

Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

2016-02-01

A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

Electrodeposition synthesis and electrochemical properties of nanostructured {gamma}-MnO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Chou, Shulei; Cheng, Fangyi; Chen, Jun [Institute of New Energy Material Chemistry, Nankai University, Tianjin 300071 (China)

2006-11-08

The thin films of carambola-like {gamma}-MnO{sub 2} nanoflakes with about 20nm in thickness and at least 200nm in width were prepared on nickel sheets by combination of potentiostatic and cyclic voltammetric electrodeposition techniques. The as-prepared MnO{sub 2} nanomaterials, which were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), were used as the active material of the positive electrode for primary alkaline Zn/MnO{sub 2} batteries and electrochemical supercapacitors. Electrochemical measurements showed that the MnO{sub 2} nanoflake films displayed high potential plateau (around 1.0V versus Zn) in primary Zn/MnO{sub 2} batteries at the discharge current density of 500mAg{sup -1} and high specific capacitance of 240Fg{sup -1} at the current density of 1mAcm{sup -2}. This indicated the potential application of carambola-like {gamma}-MnO{sub 2} nanoflakes in high-power batteries and electrochemical supercapacitors. The growth process for the one- and three-dimensional nanostructured MnO{sub 2} was discussed on the basis of potentiostatic and cyclic voltammetric techniques. The present synthesis method can be extended to the preparation of other nanostructured metal-oxide films. (author)

Spectral properties of Dy3+ doped ZnAl2O4 phosphor

Science.gov (United States)

Prakash, Ram; Kumar, Sandeep; Mahajan, Rubby; Khajuria, Pooja; Kumar, Vinay; Choudhary, R. J.; Phase, D. M.

2018-05-01

Herein, Dy3+ doped ZnAl2O4 phosphor was synthesized by the solution combustion method. The synthesized phosphor was characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, UV-Vis spectroscopy and X-ray photoelectron spectroscopy (XPS). The phase purity of the phosphor was confirmed by the XRD studies that showed cubic symmetry of the synthesized phosphor. Under UV excitation (388 nm) the PL emission spectrum of the phosphor shows characteristic transition from the Dy3+ ion. A band gap of 5.2 eV was estimated from the diffused reflectance spectroscopy. The surface properties of the phosphor were studied using the X-ray photoelectron spectroscopy.

Synthesis and properties of Rb2GeF6:Mn4+ red-emitting phosphors

Science.gov (United States)

Sakurai, Shono; Nakamura, Toshihiro; Adachi, Sadao

2018-02-01

Rb2GeF6:Mn4+ red-emitting phosphors were synthesized by coprecipitation and their structural and optical properties were investigated by laser microscopy observation, X-ray diffraction (XRD) analysis, photoluminescence (PL) analysis, PL excitation (PLE) spectroscopy, and PL decay measurement. Single-crystalline ingots in the form of a hexagonal pyramid were prepared with a basal plane diameter of ˜2 mm. The XRD analysis suggested that Rb2GeF6 crystallizes in the hexagonal structure (C6v4 = P63mc) with a = 0.5955 nm and c = 0.9672 nm. The phosphor exhibited the strong Mn4+-related zero-phonon line (ZPL) emission peak typically observed in host crystals with piezoelectrically active lattices such as a hexagonal lattice. The quantum efficiencies of the bulk ingot and powdered samples were 87 and 74%, respectively, with nearly the same luminescence decay time of ˜6 ms. The exact ZPL energies and related crystal-field and Racah parameters were obtained from the PL and PLE spectra by Franck-Condon analysis. Temperature-dependent PL intensities were analyzed from T = 20 to 500 K using a thermal quenching model by considering Bose-Einstein phonon statistics. A comparative discussion on the phosphor properties of Rb2GeF6:Mn4+ and Rb2MF6:Mn4+ with M = Si and Ti was also given.

Effect of Mn doping on the structural and optical properties of ZrO2 thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Berlin, I. John; Lekshmy, S. Sujatha; Ganesan, V.; Thomas, P.V.; Joy, K.

2014-01-01

Homogeneous and transparent Mn doped ZrO 2 thin films were prepared by sol–gel dip coating method. The films were annealed in air atmosphere at 500 °C. The X-ray diffraction pattern of the undoped ZrO 2 thin film revealed a mixed phase of tetragonal and monoclinic ZrO 2 with preferred orientations along T(111) and M(− 111). Grazing Incidence X-ray Diffraction of Mn doped ZrO 2 thin films reveals the introduction of Mn interstitial in ZrO 2 which stabilize the mixed phase of ZrO 2 into tetragonal phase. Atomic force microscope image shows the addition of catalyst (Mn) which stops isotropic agglomeration of particles, instead of anisotropic agglomeration that occurred resulting in growth of particles in certain direction. Average transmittances of > 70% (in UV–vis region) were observed for all samples. The optical band gap decreased from 5.72 to 4.52 eV with increase in Mn doping concentration. The reduced band gap is due to the introduction of impurity levels in the band gap, by incorporation of the metal ions into the ZrO 2 lattice. The d-electron of Mn (t 2g level) can easily overlap with the ZrO 2 's valence band (VB) because t 2g of Mn is very close to VB of ZrO 2 . This overlap caused a wide VB and consequently decreases the band gap of ZrO 2 . The photoluminescence (PL) spectrum of undoped zirconia thin film exhibits an intense near band edge emission peak at 392.5 nm (3.15 eV) and weak emission peaks at 304 (4.07 eV), 604 nm (2.05 eV) and 766 nm (1.61 eV). Additional PL peaks were observed for Mn doped ZrO 2 located at around 420, 447 (blue), 483 (blue) and 529 (green) nm respectively. These peaks were due to the redox properties of various valence state of Mn in ZrO 2 . The prepared Mn doped ZrO 2 thin films can be applied in optical devices. - Highlights: • Mn-doped ZrO 2 thin films were prepared by sol–gel dip coating method. • Introduction of Mn interstitial in ZrO 2 stabilizes ZrO 2 into tetragonal phase. • The optical band gap

(0 0 2-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

Directory of Open Access Journals (Sweden)

Guo Dongyun

2016-09-01

Full Text Available Zinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0 substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2 preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylaminoethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2-oriented ZnO thin films were formed by adjusting the baking temperature.

Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Haenel, T.; Lee, K.Y.; Rau, B.; Ruske, F.; Weber, T.; Gall, S.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie (formerly Hahn-Meitner-Institut Berlin), Kekulestr. 5, D-12489 Berlin (Germany); Berginski, M.; Huepkes, J. [Institute of Photovoltaics, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)

2009-06-15

The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 {omega} after 22 h annealing at 600 C and only slightly increases for a 200 s heat treatment at 900 C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 C. (author)

Elucidation of the enhanced ferromagnetic origin in Mn-doped ZnO nanocrystals embedded into a SiO₂ matrix

Energy Technology Data Exchange (ETDEWEB)

Lee, Sejoon; Lee, Youngmin; Kim, Deukyoung [Dongguk University, Seoul (Korea, Republic of)

2013-01-01

The origin of the enhanced room temperature ferromagnetism in Mn-doped ZnO (ZnO:Mn) nanocrystals is investigated. ZnO:Mn nanocrystals, which were fabricated by using a laser irradiation method with a 248-nm KrF excimer laser, exhibited two-times increase in the spontaneous magnetization (∼0.4 emu/cm³ at 300 K) compared to the ZnO:Mn thin film (∼0.2 emu/cm³ at 300 K). The increased exchange integral of J₁/k{sub B} = 51.6 K in ZnO:Mn nanocrystals, in comparison with the ZnO:Mn thin film (J₁/k{sub B} = 46.9 K), is indicative of the enhanced ferromagnetic exchange interaction. This is attributed to the large number of acceptor defects in the SiO₂-capped ZnO:Mn nanocrystals. Namely, the holes bound to the acceptor defects form microscopic bound-magnetic-polarons with Mn ions; hence, long-range ferromagnetic coupling is enhanced. The results suggest that ferromagnetism in ZnO-based dilute magnetic semiconductors can be controlled by modulating the density of native point defects, which can be chemically and thermodynamically modified during the material synthesis or preparation.

Effect of acetic acid on wet patterning of copper/molybdenum thin films in phosphoric acid solution

International Nuclear Information System (INIS)

Seo, Bo.-Hyun; Lee, Sang-Hyuk; Park, In-Sun; Seo, Jong Hyun; Choe, HeeHwan; Jeon, Jae-Hong; Hong, Munpyo; Lee, Yong Uk; Winkler, Joerg

2011-01-01

Copper metallization is a key issue for high performance thin film transistor (TFT) technology. A phosphoric acid based copper etchant is a potentially attractive alternative to the conventional hydrogen peroxide based etchant due to its longer-life expectancy time and higher stability in use. In this paper, it is shown that amount of the acetic acid in the phosphoric based copper etchant plays an important role in controlling the galvanic reaction between the copper and the molybdenum. As the concentration of acetic acid in the phosphoric mixture solution increased from 0 M to 0.4 M, the measured galvanic current density dropped from 32 mA/cm 2 to 26 mA/cm 2 , indicating that the acetic acid induces the lower galvanic reaction between the copper and the molybdenum in the solution. From the XPS analysis, with the addition of the acetic acid, the thickness of the protective MoO 2 passive film covering the molybdenum surface grew and the dissolution rate of the molybdenum thin film decreased. However, the dissolution rate of the copper thin film increased as the concentration of acetic acid in the mixture solution increased.

Effect of acetic acid on wet patterning of copper/molybdenum thin films in phosphoric acid solution

Energy Technology Data Exchange (ETDEWEB)

Seo, Bo.-Hyun; Lee, Sang-Hyuk; Park, In-Sun [Department of Materials Engineering, Korea Aerospace University, Hwajeon, Goyang, Gyonggi-do 412-791 (Korea, Republic of); Seo, Jong Hyun, E-mail: jhseo@kau.ac.kr [Department of Materials Engineering, Korea Aerospace University, Hwajeon, Goyang, Gyonggi-do 412-791 (Korea, Republic of); Choe, HeeHwan; Jeon, Jae-Hong [School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University, Hwajeon, Goyang, Gyonggi-do 412-791 (Korea, Republic of); Hong, Munpyo [Display and Semiconductor Physics, Korea University (Korea, Republic of); Lee, Yong Uk [PETEC (The Printable Electronics Technology Centre) (United Kingdom); Winkler, Joerg [PLANSEE Metal GmbH, Metallwerk-Plansee-Str. 71A-6600, Reutte (Austria)

2011-08-01

Copper metallization is a key issue for high performance thin film transistor (TFT) technology. A phosphoric acid based copper etchant is a potentially attractive alternative to the conventional hydrogen peroxide based etchant due to its longer-life expectancy time and higher stability in use. In this paper, it is shown that amount of the acetic acid in the phosphoric based copper etchant plays an important role in controlling the galvanic reaction between the copper and the molybdenum. As the concentration of acetic acid in the phosphoric mixture solution increased from 0 M to 0.4 M, the measured galvanic current density dropped from 32 mA/cm{sup 2} to 26 mA/cm{sup 2}, indicating that the acetic acid induces the lower galvanic reaction between the copper and the molybdenum in the solution. From the XPS analysis, with the addition of the acetic acid, the thickness of the protective MoO{sub 2} passive film covering the molybdenum surface grew and the dissolution rate of the molybdenum thin film decreased. However, the dissolution rate of the copper thin film increased as the concentration of acetic acid in the mixture solution increased.

Temperature dependent luminescence and energy transfer properties of Na2SrMg(PO4)2:Eu2+, Mn2+ phosphors.

Science.gov (United States)

Geng, Dongling; Shang, Mengmeng; Zhang, Yang; Lian, Hongzhou; Lin, Jun

2013-11-21

Eu(2+) singly and Eu(2+)/Mn(2+) co-doped Na2SrMg(PO4)2 (NSMP) phosphors have been prepared via a high-temperature solid-state reaction process. Upon UV excitation of 260-360 nm, the NSMP:xEu(2+) phosphors exhibit a violet band located at 399 nm and a blue band centered at 445 nm, which originate from Eu(2+) ions occupying two different crystallographic sites: Eu(2+)(I) and Eu(2+)(II), respectively. Excitation wavelengths longer than 380 nm can selectively excite Eu(2+)(II) to emit blue light. Energy transfer processes in the Eu(2+)(I)-Eu(2+)(II) and Eu(2+)-Mn(2+) pairs have been observed and investigated by luminescence spectra and decay curves. The emission color of as-prepared samples can be tuned by changing the relative concentrations of Eu(2+) and Mn(2+) ions and adjusting the excitation wavelength. Under UV excitation of 323 nm, the absolute quantum yield of NSMP:0.005Eu(2+) is 91%, which is higher than most of the other Eu(2+)-doped phosphors reported previously. The temperature dependent luminescence properties and decay curves (4.3-450 K) of NSMP:Eu(2+) and NSMP:Eu(2+), Mn(2+) phosphors have been studied in detail. Thermal quenching of Eu(2+) has been observed while the emission band of Mn(2+) shows a blue-shift and an abnormal increase of intensity with increasing temperature. The unusual thermal quenching behavior indicates that the NSMP compound can serve as a good lattice host for Mn(2+) ions which can be used as a red-emitting phosphor. Additionally, the lifetimes for Eu(2+)(I) and Eu(2+)(II) increase with increasing temperatures.

Luminescence property and emission enhancement of YbAlO3:Mn4+ red phosphor by Mg2+ or Li+ ions

Science.gov (United States)

Cao, Renping; Luo, Wenjie; Xu, Haidong; Luo, Zhiyang; Hu, Qianglin; Fu, Ting; Peng, Dedong

2016-03-01

YbAlO3:Mn4+, YbAlO3:Mn4+, Li+, and YbAlO3:Mn4+, Mg2+ phosphors are synthesized by high temperature solid-state reaction method in air. Their crystal structures and luminescence properties are investigated. Photoluminescence excitation (PLE) spectrum monitored at 677 nm contains broad PLE band with three PLE peaks located at ∼318, 395, and 470 nm within the range 220-600 nm. Emission spectra with excitation 318 and 470 nm exhibit three emission band peaks located at ∼645, 677, and 700 nm in the range of 610-800 nm and their corresponding chromaticity coordinates are about (x = 0.6942, y = 0.3057). The possible luminous mechanism of Mn4+ ion is analyzed by the simple energy level diagram of Mn4+ ion. The optimum Mn4+-doped concentration in YbAlO3:Mn4+ phosphor is about 0.4 mol% and the luminescence lifetime of YbAlO3:0.4%Mn4+ phosphor is ∼0.59 ms. Emission intensity of YbAlO3:0.4%Mn4+ phosphor can be enhanced ∼6 times after Mg2+ ion is co-doped and it is ∼2 times when Li+ ion is co-doped. The content in the paper is useful to research new Mn4+-doped luminescence materials and improve luminescence property of other Mn4+-doped phosphors.

Piezoelectric Response Evaluation of ZnO Thin Film Prepared by RF Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Cheng Da-Long

2017-01-01

Full Text Available The most important parameter of piezoelectric materials is piezoelectric coefficient (d33. In this study, the piezoelectric ZnO thin films were deposited on the SiNx/Si substrate. The 4 inches substrate is diced into 8 cm× 8 cm piece. During the deposition process, a zinc target (99.999 wt% of 2 inches diameter was used. The vertical distance between the target and the substrate holder was fixed at 5 cm. The piezoelectric response of zinc oxide (ZnO thin films were obtained by using a direct measurement system. The system adopts a mini impact tip to generate an impulsive force and read out the piezoelectric signals immediately. Experimentally, a servo motor is used to produce a fixed quantity of force, for giving an impact against to the piezoelectric film. The ZnO thin films were deposited using the reactive radio frequency (RF magnetron sputtering method. The electric charges should be generated because of the material’s extrusion. This phenomenon was investigated through the oscilloscope by one shot trigger. It was apparent that all ZnO films exhibit piezoelectric responses evaluated by our measurement system, however, its exhibit a significant discrepancy. The piezoelectric responses of ZnO thin film at various deposition positions were measured and the crystal structures of the sputtering pressure were also discussed. The crystalline characteristics of ZnO thin films are investigated through the XRD and SEM. The results show the ZnO thin film exhibits good crystalline pattern and surface morphology with controlled sputtering condition. The ZnO thin films sputtered using 2 inches target present various piezoelectric responses. With the exactly related position, a best piezoelectric response of ZnO thin film can be achieved.

Co-sputtered ZnO:Si thin films as transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

2012-12-01

Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

Structure and soft magnetic properties of sputter deposited MnZn-ferrite films

NARCIS (Netherlands)

Gillies, M.F.; Coehoorn, R.; van Zon, J.B.A.D.; Alders, D.

1998-01-01

In this paper we report the soft magnetic properties of thin films of sputtered MnZn ferrite deposited on thermally oxidized Si substrates. A high deposition temperature, 600¿°C, together with the addition of water vapor to the sputtering gas was found to improve the initial ac permeability, µ. The

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

Science.gov (United States)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Size control of nanocrystals in InGaZnO4 thin films fabricated by using the sol-gel method

International Nuclear Information System (INIS)

Seo, S. J.; Cho, J. H.; Jang, Y. H.; Kim, C. H.

2012-01-01

We report the structural properties of InGaZnO 4 (IGZO) thin films prepared by using the sol-gel method. The structural properties of IGZO thin films were controlled by using the film thickness and thermal annealing temperature. In this study, the crystallization temperature of amorphous IGZO thin films was observed to be about 700 .deg. C. Also, we observed that the crystal size of IGZO thin films increased as the thickness and the annealing temperature were increased. In addition, we could observe that the atomic ratio of In, Ga and Zn of the IGZO thin film was slightly different from the molar ratio of a previous IGZO sol-gel solution (In:Ga:Zn = 1:1:1) post-annealed at 900 .deg. C because In and Zn are more volatile than Ga. The study of the crystallization of amorphous IGZO thin films provides an understanding of the growth mechanisms and thermal annealing effects for IGZO nanocrystals.

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film

International Nuclear Information System (INIS)

Shen, Xi; Shigematsu, Kei; Chikamatsu, Akira; Fukumura, Tomoteru; Hirose, Yasushi; Hasegawa, Tetsuya

2014-01-01

We report the electrical transport properties of ferrimagnetic Mn 4 N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn 4 N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m 3 , which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

Magnetic and electronic properties of SrMnO3 thin films

Science.gov (United States)

Mandal, Arup Kumar; Panchal, Gyanendra; Choudhary, R. J.; Phase, D. M.

2018-05-01

Single phase hexagonal bulk SrMnO3 (SMO) was prepared by solid state route and it was used for depositing thin films by pulsed laser deposition (PLD) technique on single crystalline (100) oriented SrTiO3 (STO) substrate. X-ray diffraction shows that the thin film is deposited in cubic SrMnO3 phase. From X-ray absorption at the Mn L edge we observed the mixed valency of Mn (Mn3+& Mn4+) due to strain induced by the lattice mismatching between SMO and STO. Due to this mixed valency of Mn ion in SMO film, the ferromagnetic nature is observed at lower temperature because of double exchange. After post annealing with very low oxygen partial pressure, magnetic and electronic property of SMO films are effectively modified.

Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

2017-04-01

Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

Facile chemical synthesis of nanoporous layered δ-MnO{sub 2} thin film for high-performance flexible electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Hu, Yu; Wang, Jun; Jiang, Xionghua; Zheng, Yanfeng [The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Chen, Zhenxing, E-mail: chenzx65@mail.sysu.edu.cn [The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

2013-04-15

Layered δ-MnO{sub 2} thin films with a three-dimensional nanostructure are successfully fabricated on stainless steel foil substrates for flexible electrochemical capacitors by a facile and effective chemical bath deposition technology from ethanol and potassium permanganate solution at 15 °C. The as-prepared thin films display nanoporous morphology and a water contact angle of 20°. Energy-dispersive X-ray spectroscopy, X-ray diffraction, and Fourier transform infrared spectroscopy analyses reveal that the thin films are composed of δ-MnO{sub 2}. Electrochemical data demonstrate that the δ-MnO{sub 2} thin film electrodes can deliver a high special capacitance of 447 F/g at 2 mV/s, and provide a good capacitance retention ratio of 87% after 1000 continuous cycles at 10 mV/s in 0.5 M Na{sub 2}SO{sub 4}. Compressive and tensile bending tests show that the as-prepared electrodes can steadily work over a wide range of applied curvatures between −2.5 cm{sup −1} (tension) and 2.5 cm{sup −1} (compression). Only a small decrease in special capacitance (0.9% at a curvature of 2.5 cm{sup −1} under compressive strain, or 1.2% at a curvature of −2.5 cm{sup −1} under tensile strain) is observed even after bending for 200 cycles, indicating the excellent mechanical flexibility and electrochemical stability of the δ-MnO{sub 2} thin film electrodes.

Photoelectrochemical performance of Mn-TiO{sub 2} thin films mounted on FTO prepared by sol-gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Chen, J.C.; Song, G.H. [National Central Univ., Taoyuan, Taiwan (China). Dept. of Mechanical Engineering; Lu, C.W. [Jen-Teh Junior College, Hou- Lung, Taiwan (China). Dept. of Information Management; Tseng, C.J. [National Central Univ., Chung-Li, Taoyuan County, Taiwan (China). Dept. of Mechanical Engineering; Cheng, K.W. [Chang Gung Univ., Tao-Yuan, Taiwan (China). Dept. of Chemical and Materials Engineering

2009-07-01

Tin oxide (TiO{sub 2}) sol-gels with Mn{sup 2+} molar ratios ranging from 0 to 0.1 per cent were used to form nano-structured Mn(x)Ti(1-x)O(2) thin films. A layer-by-layer spincoating (LLSC) technique was used, in which 10 very thin and uniform coating layers of Mn(x)Ti(1-x)O(2) were deposited on fluorine doped tin oxide (FTO) glass. Properties of the thin films were determined as a function of annealing temperature and molar ratio of the Mn{sup 2+} ions by X-ray diffraction (XRD), scanning electron microscopy (SEM), Atomic Force microscopy (AFM) and photoelectrochemical (PEC) measurements. The PEC measurements were obtained in a dry-type three-electrode cell consisting of sample, platinized and reference Ag/AgCl electrodes. The results revealed that the Mn(x)Ti(1-x)O(2) thin films have better structure and electrochemical characteristics when the annealing temperature is 550 degrees C. The TiO{sub 2} thin films with Mn{sup 2+} ions also had higher photocurrent than undoped TiO{sub 2}. The optimum Mn{sup 2+} loading in this study was found to be 0.1 ml per cent. The maximum photocurrent of Mn(0.1)Ti(0.9)O(2) thin films is about 0.68 mA/cm2 when the bias potential is 0.8 V (vs.Ag/AgCl).

Synthesis and property of spinel porous ZnMn2O4 microspheres

Science.gov (United States)

Guo, N.; Wei, X. Q.; Deng, X. L.; Xu, X. J.

2015-11-01

Mesoporous ternary zinc manganese oxides on the Ti sheet substrate are prepared by easy and fast hydrothermal method for the first time. The obtained ZnMn2O4 materials with homogenously distributed pores have been characterized by XRD, SEM and Raman spectra, which show the good crystal phase and particles for improving supercapacitive performance. XRD and SEM images show that the as-prepared samples have good crystallinity, and ZnMn2O4 microsphere has an average diameter of 10 μm. In addition, ZnMn2O4 are also characterized in 2 M KOH solution using three-electrode system. In the work, we study that different substrates (Ti, carbon and nickel foam) have an important effect on the electrochemical performance of the samples. The research of cyclic voltammogram (CV) indicates that the obtained specific capacitance (155 F g-1) values on nickel foam substrate for the ZnMn2O4 microspheres are higher than the values reported for some inexpensive oxides. However, the specific capacitance of all ZnMn2O4 samples has almost no change at two different scan rates which shows good long-term cycling stability. The electrochemical impedance spectroscopy with a small resistance reveals that the as-synthesized samples have good frequency response characteristics. These results indicate that the unique ZnMn2O4 electrode would be a promising electrode for high-performance supercapacitor applications.

Effect of annealing on structural and optical properties of Cu_2ZnSnS_4 thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Surgina, G.D.; Nevolin, V.N.; Sipaylo, I.P.; Teterin, P.E.; Medvedeva, S.S.; Lebedinsky, Yu.Yu.; Zenkevich, A.V.

2015-01-01

In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu_2ZnSnS_4 (CZTS) thin films grown by reactive Pulsed Laser Deposition in H_2S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N_2 at the optimized conditions. - Highlights: • Cu_2ZnSnS_4 (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H_2S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N_2 effectively inhibits the formation of Sn_xS secondary phases.

Effect of Mn doping on the structural, magnetic, optical and electrical properties of ZrO_2–SnO_2 thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Anitha, V.S.; Sujatha Lekshmy, S.; Joy, K.

2016-01-01

Manganese doped ZrO_2–SnO_2 (ZrO_2–SnO_2: Mn) nanocomposite thin films were prepared using sol – gel dip coating technique. The structural, morphological, magnetic, optical and electrical properties of the films were studied for undoped and different (15 mol %) manganese doping concentrations. X-ray diffraction pattern (XRD) of films showed the formation of tetragonal phase of SnO_2 and orthorhombic ZrSnO_4. Decrease in crystallinity with increase of Mn concentration was observed for the films. Scanning electron microscopy (SEM) showed the formation of grain growth with an increase in Mn concentration. X-ray photo electron spectroscopy (XPS) confirmed the presence of Zr"4"+, Sn"4"+ and Mn"2"+ ion in ZrO_2–SnO_2: Mn films. Vibrating sample magnetometer (VSM) measurements reveal the presence of magnetic properties in Mn doped nanocomposite thin films. Antiferromagnetic interactions were observed for 5 mol % Mn doping. An average transmittance >80% (UV - Vis region) was observed for all the films. Band gap of the films decreased from 4.78 to 4.41 eV with increase in Mn concentration. Photoluminescence (PL) spectra of the films exhibited emission peaks in visible region of the electromagnetic spectra. Conductivity of the film increased up to 3 mol % Mn doping and then decreased. - Highlights: • ZrO_2–SnO_2: Mn films were deposited onto quartz substrates by Sol –Gel dip coating. • Structural, magnetic, optical and electrical properties of the films were analyzed. • Optical band gap decreased with increase in manganese concentration. • Ferromagnetic behavior was observed for Mn doped films. • These ferromagnetic ZrO_2–SnO_2: Mn films find application in spintronic devices.

Single-phased white-light-emitting Sr3NaLa(PO4)3F: Eu2+,Mn2+ phosphor via energy transfer

International Nuclear Information System (INIS)

Shanshan, Hu; Wanjun, Tang

2014-01-01

Single-phased white-light-emitting Sr 3 NaLa(PO 4 ) 3 F:Eu 2+ ,Mn 2+ phosphor is synthesized via the combustion-assisted synthesis technique. Upon excitation of 344 nm ultraviolet (UV) light, two intense broad bands have clearly been obtained due to the allowed 5d–4f transition of Eu 2+ and the forbidden 4 T 1 − 6 A 1 transition of Mn 2+ , respectively. As a result of fine-tuning of the emission composition of the Eu 2+ and Mn 2+ ions, white-light emission can be realized by combining the emission of Eu 2+ and Mn 2+ in a single host lattice under UV light excitation. The obtained phosphor exhibits a strong excitation band between 250 and 420 nm, matching well with the dominant emission band of a UV light-emitting-diode (LED) chip, which could be a promising candidate for UV-converting white-light-emitting diodes (LEDs). -- Highlights: • Single-phased Sr 3 NaLa(PO 4 ) 3 F:Eu 2+ ,Mn 2+ phosphors are synthesized. • Sr 3 NaLa(PO 4 ) 3 F:Eu 2+ ,Mn 2+ shows a blue emission band and a yellow emission band. • White-emitting can be obtained by tuning the compositions of the Eu 2+ and Mn 2+

High quality antireflective ZnS thin films prepared by chemical bath deposition

International Nuclear Information System (INIS)

Tec-Yam, S.; Rojas, J.; Rejón, V.; Oliva, A.I.

2012-01-01

Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl 2 , NH 4 NO 3 , and CS(NH 2 ) 2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: ► High quality ZnS thin films were prepared by chemical bath deposition (CBD). ► Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. ► Reduction in the reflectance was obtained for ZnS films used as buffer layers.

Effects of diethanolamine on sol–gel–processed Cu{sub 2}ZnSnS{sub 4} photovoltaic absorber thin films

Energy Technology Data Exchange (ETDEWEB)

Kahraman, S., E-mail: suleymanmku@gmail.com; Çetinkaya, S.; Çetinkara, H.A.; Güder, H.S.

2014-02-01

Highlights: • DEA content significantly affected the crystal structure and the phase purity. • The films’ crystallite sizes increased with increasing DEA content. • Two different impurity levels were found for each film via R-T characteristics. • Under different illuminations, the n-Si/CZTS exhibited good photo-response. • The light on/off current ratios confirmed the photo-sensitivity of the junction. - Abstract: As a promising solar absorber, the Cu{sub 2}ZnSnS{sub 4} compound has been popular recently for the production of green and economical thin-film solar cells owing to the abundancy and non-toxicity of all the constituents. In this study, we have produced Cu{sub 2}ZnSnS{sub 4} films via the sol–gel technique. As a stabilizer, the effects of the diethanolamine on the properties of the films were investigated. The amount of diethanolamine significantly affected the crystal structure, crystallite sizes and phase purity of the films. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. It was found that the film produced by using 2 ml of diethanolamine in sol exhibited pure CZTS phase, compact and dense morphology and enhanced photo-sensitivity. Light on/off current ratio of the n-Si/Cu{sub 2}ZnSnS{sub 4} junction was found to be 47 under 100 mW/cm{sup 2} of illumination. Electrical activation energies of the films were investigated and the variations were attributed to delocalized phonon states generating from the presence of other phases and lattice defects.

Polyelectrolyte-assisted preparation and characterization of nanostructured ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Jia, Shijun

2005-05-15

The present work focuses on the synthesis and characterization of nanostructured ZnO thin films onto silicon wafers modified by self-assembled-monolayers via chemical bath deposition. Two precursor solutions were designed and used for the film deposition, in which two different polymers were introduced respectively to control the growth of the ZnO colloidal particles in solution. ZnO films were deposited from an aqueous solution containing zinc salt and hexamethylenetetramine (HMTA) in the presence of a graft-copolymer (P (MAA{sub 0.50}-co(MAA-EO{sub 20}){sub 0.50}){sub 70}). A film-formation-diagram was established based on the results obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM), which describes the influence of the concentration of HMTA and copolymer on the ZnO film formation. According to the film morphology, film formation can be classified into three categories: (a) island-like films, (b) uniform films and (c) canyon-like films. The ZnO films annealed at temperatures of 450 C, 500 C, 600 C and 700 C were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). After annealing, the films are polycrystalline ZnO with wurtzite structure. XRD measurements indicate that with increasing annealing temperature, the average grain size increases accordingly and the crystallinity of the films is improved. Upon heating to 600 C, the ZnO films exhibit preferred orientation with c-axis normal to substrate, whereas the films annealed at 700 C even show a more explicit texture. By annealing at temperatures above 600 C the ZnO film reacts with the substrate to form an interfacial layer of Zn{sub 2}SiO{sub 4}, which grows thicker at elevated annealing temperatures. The ZnO films annealed at 600 C and 700 C show strong UV emission. Another non-aqueous solution system for ZnO thin film deposition was established, in which 2- propanol was used as a solvent and Zn(CH3COO){sub 2}.2H{sub 2}O as well as NaOH as reactants

Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process.

Science.gov (United States)

Kim, Gee Yeong; Kim, Ju Ri; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

2014-01-08

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.PACS number: 08.37.-d; 61.72.Mm; 71.35.-y.

Ca8NaY(PO4)6F2:Eu2+,Mn2+: a potential color-tunable phosphor for white LEDs applications

International Nuclear Information System (INIS)

Fen, Zhang; Wanjun, Tang

2015-01-01

Eu 2+ - and/or Mn 2+ -activated Ca 8 NaY(PO 4 ) 6 F 2 phosphors have been prepared via a combustion-assisted synthesis route. The powder X-ray diffraction measurement revealed that Ca 8 NaY(PO 4 ) 6 F 2 crystallized in a hexagonal crystal system with the space group P6 3 /m (176). The photoluminescence spectrum of the Eu 2+ single-doped phosphor shows a broad blue emission band peaking at 451 nm under the excitation of UV irradiation. The Eu 2+ -/Mn 2+ -codoped phosphors show a blue emission band and an orange emission band, and the corresponding CIE coordinates intuitively indicate the tunable colors from blue to yellow area. The energy transfer from the Eu 2+ to Mn 2+ ions is demonstrated to be a quadrupole-quadrupole mechanism in terms of the experimental results and analysis of PL spectra and decay curves of the phosphors. The developed phosphors can be efficiently excited in the UV region and exhibit a tunable white-light emission, making them attractive as single-component white-light-emitting conversion phosphors for UV-based white LEDs. (orig.)

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

Energy Technology Data Exchange (ETDEWEB)

Shen, Xi; Shigematsu, Kei [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Fukumura, Tomoteru [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

2014-08-18

We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

International Nuclear Information System (INIS)

Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W.; Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.

2009-01-01

Thin-film solar cells based on Cu 2 ZnSnS 4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H 2 S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm 2 ) efficiency of 3.4% is achieved (V oc = 563 mV, j sc = 14.8 mA/cm 2 , FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 μm. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu 2 SnS 3 , close to the interface Mo/CZTS

Pulsed laser deposited Al-doped ZnO thin films for optical applications

Directory of Open Access Journals (Sweden)

Gurpreet Kaur

2015-02-01

Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

Optical and structural properties of ZnO/ZnMgO composite thin films prepared by sol–gel technique

International Nuclear Information System (INIS)

Xu, Linhua; Su, Jing; Chen, Yulin; Zheng, Gaige; Pei, Shixin; Sun, Tingting; Wang, Junfeng; Lai, Min

2013-01-01

Highlights: ► ZnMgO thin film and ZnO/ZnMgO composite thin film have been prepared by sol–gel method. ► The intensity of ultraviolet emission of ZnMgO thin film is enhanced two times compared with that of pure ZnO thin film. ► Compared with ZnMgO thin film, ZnO/ZnMgO composite thin film shows better crystallization and optical properties. ► ZnO/ZnMgO composite thin films prepared by sol–gel method have potential applications in many optoelectronic devices. - Abstract: In this study, pure ZnO thin film, Mg-doped ZnO (ZnMgO) thin film, ZnO/ZnMgO and ZnMgO/ZnO composite thin films were prepared by sol–gel technique. The structural and optical properties of the samples were analyzed by X-ray diffraction, scanning electron microscopy, UV–visible spectrophotometer, ellipsometer and photoluminescence spectra, respectively. The results showed that the incorporation of Mg increased the strain, broadened the optical bandgap, and improved the intensity of ultraviolet emission of ZnO thin film. The full width at half maximum (FWHM) of the ultraviolet emission peak was also increased due to Mg-doping at the same time. Compared with pure ZnO and ZnMgO thin films, the ZnO/ZnMgO thin film showed better crystalline quality and ultraviolet emission performance, smaller strains and higher transmittance in the visible range.

Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

Directory of Open Access Journals (Sweden)

Samia Ahmed Nadi

2014-01-01

Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

Magnetic and photocatalytic properties of nanocrystalline ZnMn2 O4

Indian Academy of Sciences (India)

Decomposition of oxalate precursors at low temperature (∼ 450°C) yielded phase pure ZnMn2O4 nanoparticles. The size of the nanoparticles of ZnMn2O4 obtained from reverse micellar method is relatively much smaller (20–30 nm) as compared to those made by the co-precipitation (40–50 nm) method. Magnetic studies ...

Annealing effect on the structural, morphological and electrical properties of TiO2/ZnO bilayer thin films

Science.gov (United States)

Khan, M. I.; Imran, S.; Shahnawaz; Saleem, Muhammad; Ur Rehman, Saif

2018-03-01

The effect of annealing temperature on the structural, morphological and electrical properties of TiO2/ZnO (TZ) thin films has been observed. Bilayer thin films of TiO2/ZnO are deposited on FTO glass substrate by spray pyrolysis method. After deposition, these films are annealed at 573 K, 723 K and 873 K. XRD shows that TiO2 is present in anatase phase only and ZnO is present in hexagonal phase. No other phases of TiO2 and ZnO are present. Also, there is no evidence of other compounds like Zn-Ti etc. It also shows that the average grain size of TiO2/ZnO films is increased by increasing annealing temperature. AFM (Atomic force microscope) showed that the average roughness of TiO2/ZnO films is decreased at temperature 573-723 K and then increased at 873 K. The calculated average sheet resistivity of thin films annealed at 573 K, 723 K and 873 K is 152.28 × 102, 75.29 × 102 and 63.34 × 102 ohm-m respectively. This decrease in sheet resistivity might be due to the increment of electron concentration with increasing thickness and the temperature of thin films.

The structure and magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film

Science.gov (United States)

Huang, Yuanqi; Chen, Zhengwei; Zhang, Xiao; Wang, Xiaolong; Zhi, Yusong; Wu, Zhenping; Tang, Weihua

2018-05-01

High quality epitaxial single phase (Ga0.96Mn0.04)2O3 and Ga2O3 thin films have been prepared on sapphire substrates by using laser molecular beam epitaxy (L-MBE). X-ray diffraction results indicate that the thin films have the monoclinic structure with a ≤ft( {\\bar 201} \\right) preferable orientation. Room temperature (RT) ferromagnetism appears and the magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film are enhanced compared with our previous works. Experiments as well as the first principle method are used to explain the role of Mn dopant on the structure and magnetic properties of the thin films. The ferromagnetic properties are explained based on the concentration of transition element and the defects in the thin films. Project supported by the National Natural Science Foundation of China (Nos. 11404029, 51572033, 51172208) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT).

Laser nanostructuring of ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

2016-06-30

Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

Preferential orientation relationships in Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films

Energy Technology Data Exchange (ETDEWEB)

Lacotte, M.; David, A.; Prellier, W., E-mail: wilfrid.prellier@ensicaen.fr [Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Université de Basse-Normandie, 6 Bd Maréchal Juin, F-14050 Caen Cedex 4 (France); Rohrer, G. S.; Salvador, P. A. [Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States)

2015-07-28

A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr{sub 2}TiO{sub 4} substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship (OR) for each substrate-film grain pair. Two preferred epitaxial ORs accounted for more than 90% of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell OR ([100][001]{sub film} ∥ [100][001]{sub substrate}, or OR1) accounted for approximately 30% of each film. The OR that accounted for 60% of each film ([100][001]{sub film} ∥ [100][010]{sub substrate}, or OR2) corresponds to a rotation from OR1 by 90° about the a-axis. OR2 is strongly favored for substrate orientations in the center of the stereographic triangle, and OR1 is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While OR1 should be lower in energy, the majority observation of OR2 implies kinetic hindrances decrease the frequency of OR1. Persistent grain over grain growth and the absence of variations of the OR frequencies with thickness implies that the growth competition is finished within the first few nm, and local epitaxy persists thereafter during growth.

Nanostructured ZnO thin films prepared by sol–gel spin-coating

Energy Technology Data Exchange (ETDEWEB)

Heredia, E., E-mail: heredia.edu@gmail.com [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Bojorge, C.; Casanova, J.; Cánepa, H. [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Craievich, A. [Instituto de Física, Universidade de São Paulo, Cidade Universitária, 66318 São Paulo, SP (Brazil); Kellermann, G. [Universidade Federal do Paraná, 19044 Paraná (Brazil)

2014-10-30

Highlights: • ZnO films synthesized by sol–gel were deposited by spin-coating on flat substrates. • Structural features of ZnO films with several thicknesses were characterized by means of different techniques. • The thicknesses of different ZnO thin films were determined by means of FESEM and AFM. • The nanoporous structures of ZnO thin films were characterized by GISAXS using IsGISAXS software. • The average densities of ZnO thin films were derived from (i) the critical angle in 1D XR patterns, (ii) the angle of Yoneda peak in 2D GISAXS images, (iii) minimization of chi2 using IsGISAXS best fitting procedure. - Abstract: ZnO thin films deposited on silica flat plates were prepared by spin-coating and studied by applying several techniques for structural characterization. The films were prepared by depositing different numbers of layers, each deposition being followed by a thermal treatment at 200 °C to dry and consolidate the successive layers. After depositing all layers, a final thermal treatment at 450 °C during 3 h was also applied in order to eliminate organic components and to promote the crystallization of the thin films. The total thickness of the multilayered films – ranging from 40 nm up to 150 nm – was determined by AFM and FESEM. The analysis by GIXD showed that the thin films are composed of ZnO crystallites with an average diameter of 25 nm circa. XR results demonstrated that the thin films also exhibit a large volume fraction of nanoporosity, typically 30–40 vol.% in thin films having thicknesses larger than ∼70 nm. GISAXS measurements showed that the experimental scattering intensity is well described by a structural model composed of nanopores with shape of oblate spheroids, height/diameter aspect ratio within the 0.8–0.9 range and average diameter along the sample surface plane in the 5–7 nm range.

Microstructural and optical properties of spinel oxide M{sub x}Co{sub 2−x}MnO{sub 4} (M = Ni, Zn or Cu; 0 < x < 1) thin films prepared by inorganic polycondensation and dip-coating methods

Energy Technology Data Exchange (ETDEWEB)

Le, Thi Ly; Guillemet-Fritsch, Sophie; Dufour, Pascal; Tenailleau, Christophe, E-mail: tenailleau@chimie.ups-tlse.fr

2016-08-01

Spinel oxide nanoparticles of M{sub x}Co{sub 2−x}MnO{sub 4} (M = Ni, Zn, Cu; 0 < x < 1) were prepared at 120 °C by the inorganic polycondensation method. Phase composition and microstructure of each sample powder thus obtained were characterized by X-ray diffraction, X-ray fluorescence and scanning electron microscopy. Nanoparticles are well crystallized and uniformly distributed in both shape and size. Colloidal dispersions were stabilized in a low cost and environmentally friendly solvent solution. Spinel oxide thin films were then deposited on glass substrates by using the dip-coating technique. Their optical properties were measured in the 300–1100 nm wavelength range. Thin films show extremely good absorbance in the ultra-violet and blue regions. The highest absorbance observed in the red region was for x = 0.15 in zinc. A smaller direct band gap was determined when a low amount of doping M element was introduced in the cobalt and manganese spinel oxide material. - Highlights: • Pure complex spinel oxide nanoparticles synthesis at low T • Low cost method used to stabilize colloidal dispersions • Preparation of homogenous light absorber thin films by dip-coating • Adjustable optical properties and band gaps with the dopants.

K{sub 2}MnF{sub 5}·H{sub 2}O as reactant for synthesizing highly efficient red emitting K{sub 2}TiF{sub 6}:Mn{sup 4+} phosphors by a modified cation exchange approach

Energy Technology Data Exchange (ETDEWEB)

Han, Tao, E-mail: danbaiht@126.com; Wang, Jun; Lang, Tianchun; Tu, Mingjing; Peng, Lingling

2016-11-01

As reactant for synthesizing K{sub 2}TiF{sub 6}:Mn{sup 4+} phosphors, the cross-shaped and cuboid-shaped K{sub 2}MnF{sub 5}·H{sub 2}O powders were prepared by the simple chemical method. Based on the reaction mechanism, oxidizing K{sub 2}MnF{sub 5}·H{sub 2}O (Mn{sup 3+}) to Mn{sup 4+} by KMnO{sub 4} (Mn{sup 7+}), a modified cation exchange approach for synthesizing highly efficient red emitting K{sub 2}TiF{sub 6}:Mn{sup 4+} phosphor was proposed. The obtained K{sub 2}TiF{sub 6}:Mn{sup 4+} (2.7–5.3 at.%) phosphors have the size of 30–80 μm with a rough surface, their emission spectra consist of five narrow bands extending from 580 to 660 nm with the strongest peak at 634.8 nm, whose relative emitting intensity depends on the molar ratio of KMnO{sub 4} to K{sub 2}MnF{sub 5}·H{sub 2}O (the platform value = 3.2), and two broad excitation bands are peaking at ∼365 nm and ∼460 nm. The internal quantum yield of our synthesized K{sub 2}TiF{sub 6}:Mn{sup 4+} phosphors is up to 82.5%, which is higher than the commercial CaAlSiN{sub 3}:Eu{sup 2+} value, their excitation bands peak at ∼460 and ∼365 nm are consistent with those of Y{sub 3}A{sub 5}O{sub 12}:Ce{sup 3+} phosphors and their emission bands are more suitable for the sensitivity curve of photopic human vision. In addition, our synthesized phosphors show better thermal quenching properties. These findings show a large potential of the synthesized K{sub 2}TiF{sub 6}:Mn{sup 4+} phosphors for commercialization. - Highlights: • We synthesize the cross-shaped and cuboid-shaped K{sub 2}MnF{sub 5}·H{sub 2}O. • K{sub 2}MnF{sub 5}·H{sub 2}O is as a reactant for synthesizing K{sub 2}TiF{sub 6}:Mn{sup 4+} phosphors. • K{sub 2}TiF{sub 6}:Mn{sup 4+} will improve the current white LED with high CRI for indoor lighting.

Synthesis and electrochemical properties of ZnMn_2O_4 anode for lithium-ion batteries

International Nuclear Information System (INIS)

Feng, Chuanqi; Wang, Wei; Chen, Xiao; Wang, Shiquan; Guo, Zaiping

2015-01-01

Graphical abstract: ZnMn_2O_4 nanoparticles were prepared through the rheological phase reaction method (R-ZMO) or the mixed solvothermal method(M-ZMO). The particles of M-ZMO were clustered together to form uniform microspheres morphology. The M-ZMO behaved higher reversible capacity and better cycle performance than that of R-ZMO. - Highlights: • ZnMn_2O_4 nanoparticles were prepared through the rheological phase reaction method (R-ZMO) or the mixed solvothermal method (M-ZMO). • The M-ZMO behaved higher reversible capacity and better cycle performance than that of R-ZMO. • The morphology and cell parameters of ZnMn_2O_4 are important effects on its electrochemical properties. • The diffusion coefficient of Li"+ in M-ZMO is beneficial for M-ZMO to be used an anode. - Abstract: The precursors of ZnMn_2O_4 were synthesized by different methods (the rheological phase reaction method or the mixed solvothermal method). The precursors were heat-treated at a suitable temperature to obtain the expected product (ZnMn_2O_4). The synthesized samples were characterized by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The electrochemical properties of the samples were also investigated. The results show that ZnMn_2O_4 was synthesized successfully. The particles of ZnMn_2O_4 were irregular quasi-spheres with sizes of about 50 nm. The ZnMn_2O_4 nanoparticles synthesized through the mixed solvothermal method were clustered together to form microspheres about 1 μm in diameter. The electrochemical testing results showed that the ZnMn_2O_4 synthesized through the mixed solvothermal method featured higher reversible capacity and better cycling performance than the sample synthesized by the rheological phase reaction method. The ZnMn_2O_4 synthesized through the mixed solvothermal method could be a promising anode material for lithium ion battery application.

Structural and magnetic properties in Mn-doped ZnO films prepared by pulsed-laser deposition

International Nuclear Information System (INIS)

Li, Qiang; Wang, Yuyin; Liu, Jiandang; Kong, Wei; Ye, Bangjiao

2014-01-01

We investigated the structural and magnetic properties of Zn 0.95 Mn 0.05 O films prepared on sapphire substrates by pulsed-laser deposition. Only low temperature ferromagnetism (Curie temperature lower than 50 K) was observed in Mn-doped samples, while pure ZnO film shows a typical paramagnetic behavior. Structural analyses indicate that the substitutional Mn 2+ ions play a significant role for the low temperature ferromagnetism. Lattice defects such as V O and V Zn were not proven to be effective factors for the origin of ferromagnetism in the films. The low temperature ferromagnetism might be interpreted as p–d hybridization from indirect coupling of Mn ions (Mn–O–Mn).

Synthesis and characterization of spin-coated ZnS thin films

Science.gov (United States)

Zaman, M. Burhanuz; Chandel, Tarun; Dehury, Kshetramohan; Rajaram, P.

2018-05-01

In this paper, we report synthesis of ZnS thin films using a sol-gel method. A unique aprotic solvent, dimethlysulphoxide (DMSO) has been used to obtain a homogeneous ZnS gel. Zinc acetate and thiourea were used as the precursor sources for Zn and S, respectively, to deposit nanocrystalline ZnS thin films. Optical, structural and morphological properties of the films were studied. Optical studies reveal high transmittance of the samples over the entire visible region. The energy band gap (Eg) for the ZnS thin films is found to be about 3.6 eV which matches with that of bulk ZnS. The interference fringes in transmissions spectrum show the high quality of synthesized samples. Strong photoluminescence peak in the UV region makes the films suitable for optoelectronic applications. X-ray diffraction studies reveal that sol-gel derived ZnS thin films are polycrystalline in nature with hexagonal structure. SEM studies confirmed that the ZnS films show smooth and uniform grains morphology having size in 20-25 nm range. The EDAX studies confirmed that the films are nearly stoichiometric.

Defect mediated optical properties in ZnAl2O4 phosphor

Science.gov (United States)

Pathak, Nimai; Saxena, Suryansh; Kadam, R. M.

2018-04-01

The present work describes defect mediated optical properties in ZnAl2O4 phosphor material, synthesized through sol-gel combustion method, which has potential to be used both as a blue emitting phosphor material as well as white emitting, depending upon the annealing temperature during the synthesis procedure. Various defect centers such as anionic vacancy, cationic vacancy, antisite defects etc. create different electronic states inside the band gap, which are responsible for the multicolour emission. The interesting colour tunable emission characteristics can be linked with the various defect centers and their changes upon annealing.

Effect of annealing on structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Surgina, G.D., E-mail: silvereye@bk.ru [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation); Nevolin, V.N. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Sipaylo, I.P.; Teterin, P.E. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Medvedeva, S.S. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Lebedinsky, Yu.Yu.; Zenkevich, A.V. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

2015-11-02

In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by reactive Pulsed Laser Deposition in H{sub 2}S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N{sub 2} at the optimized conditions. - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H{sub 2}S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N{sub 2} effectively inhibits the formation of Sn{sub x}S secondary phases.