WorldWideScience

Sample records for thin-film multijunction thermal

  1. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  2. Thermal conductivity model for nanoporous thin films

    Science.gov (United States)

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  3. On-Orbit Demonstration of a Lithium-Ion Capacitor and Thin-Film Multijunction Solar Cells

    Science.gov (United States)

    Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Kobayashi, Yuki; Sakai, Tomohiko; Toyota, Hiroyuki; Takahashi, Yu; Murashima, Mio; Uno, Masatoshi; Imaizumi, Mitsuru

    2014-08-01

    This paper describes an on-orbit demonstration of the Next-generation Small Satellite Instrument for Electric power systems (NESSIE) on which an aluminum- laminated lithium-ion capacitor (LIC) and a lightweight solar panel called KKM-PNL, which has space solar sheets using thin-film multijunction solar cells, were installed. The flight data examined in this paper covers a period of 143 days from launch. We verified the integrity of an LIC constructed using a simple and lightweight mounting method: no significant capacitance reduction was observed. We also confirmed that inverted metamorphic multijunction triple-junction thin-film solar cells used for evaluation were healthy at 143 days after launch, because their degradation almost matched the degradation predictions for dual-junction thin-film solar cells.

  4. Plastic response of thin films due to thermal cycling

    NARCIS (Netherlands)

    Nicola, L.; van der Giessen, E.; Needleman, A.; Ahzi, S; Cherkaoui, M; Khaleel, MA; Zbib, HM; Zikry, MA; Lamatina, B

    2004-01-01

    Discrete dislocation simulations of thin films on semi-infinite substrates under cyclic thermal loading are presented. The thin film is modelled as a two-dimensional single crystal under plane strain conditions. Dislocations of edge character can be generated from initially present sources and glide

  5. Thermal properties and stabilities of polymer thin films

    International Nuclear Information System (INIS)

    Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa

    2009-01-01

    Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)

  6. Thermal decomposition of titanium deuteride thin films

    International Nuclear Information System (INIS)

    Malinowski, M.E.

    1983-01-01

    The thermal desorption spectra of deuterium from essentially clean titanium deuteride thin films were measured by ramp heating the films in vacuum; the film thicknesses ranged from 20 to 220 nm and the ramp rates varied from 0.5 to about 3 0 C s - 1 . Each desorption spectrum consisted of a low nearly constant rate at low temperatures followed by a highly peaked rate at higher temperatures. The cleanliness and thinness of the films permitted a description of desorption rates in terms of a simple phenomenological model based on detailed balancing in which the low temperature pressure-composition characteristics of the two-phase (α-(α+#betta#)-#betta#) region of the Ti-D system were used as input data. At temperatures below 340 0 C the model predictions were in excellent agreement with the experimentally measured desorption spectra. Interpretations of the spectra in terms of 'decomposition trajectories'' are possible using this model, and this approach is also used to explain deviations of the spectra from the model at temperatures of 340 0 C and above. (Auth.)

  7. Glass transition and thermal expansivity of polystyrene thin films

    International Nuclear Information System (INIS)

    Inoue, R.; Kanaya, T.; Miyazaki, T.; Nishida, K.; Tsukushi, I.; Shibata, K.

    2006-01-01

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T g and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements

  8. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  9. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Swati Arora

    2017-01-01

    Full Text Available Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te and bismuth (Bi were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD and scanning electron microscopy (SEM to show granular growth.

  10. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the ...

  11. Thermal annealing of amorphous Ti-Si-O thin films

    OpenAIRE

    Hodroj , Abbas; Chaix-Pluchery , Odette; Audier , Marc; Gottlieb , Ulrich; Deschanvres , Jean-Luc

    2008-01-01

    International audience; Ti-Si-O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analysed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain X-ray amorphous after annealing whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well crystallized anatase TiO2. Crystallization of ana...

  12. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  13. Extending the 3ω method: thermal conductivity characterization of thin films.

    Science.gov (United States)

    Bodenschatz, Nico; Liemert, André; Schnurr, Sebastian; Wiedwald, Ulf; Ziemann, Paul

    2013-08-01

    A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.

  14. Residual stress change by thermal annealing in amorphous Sm-Fe-B thin films

    International Nuclear Information System (INIS)

    Na, S.M.; Suh, S.J.; Kim, H.J.; Lim, S.H.

    2002-01-01

    The change in the residual stress and its effect on mechanical bending and magnetic properties of sputtered amorphous Sm-Fe-B thin films are investigated as a function of annealing temperature. Two stress components of intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film are used to explain the stress state in as-deposited thin films, and the annealing temperature dependence of residual stress, mechanical bending and magnetic properties

  15. Thermal stability of gold-PS nanocomposites thin films

    Indian Academy of Sciences (India)

    Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...

  16. Thermal stability of pulsed laser deposited iridium oxide thin films at low oxygen atmosphere

    Science.gov (United States)

    Gong, Yansheng; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng

    2013-11-01

    Iridium oxide (IrO2) thin films have been regarded as a leading candidate for bottom electrode and diffusion barrier of ferroelectric capacitors, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the thermal stability of pulsed laser deposited IrO2 thin films at low oxygen atmosphere. Emphasis was given on the effect of post-deposition annealing temperature at different oxygen pressure (PO2) on the crystal structure, surface morphology, electrical resistivity, carrier concentration and mobility of IrO2 thin films. The results showed that the thermal stability of IrO2 thin films was strongly dependent on the oxygen pressure and annealing temperature. IrO2 thin films can stably exist below 923 K at PO2 = 1 Pa, which had a higher stability than the previous reported results. The surface morphology of IrO2 thin films depended on PO2 and annealing temperature, showing a flat and uniform surface for the annealed films. Electrical properties were found to be sensitive to both the annealing temperature and oxygen pressure. The room-temperature resistivity of IrO2 thin films with a value of 49-58 μΩ cm increased with annealing temperature at PO2 = 1 Pa. The thermal stability of IrO2 thin films as a function of oxygen pressure and annealing temperature was almost consistent with thermodynamic calculation.

  17. Phonon impedance matching: minimizing interfacial thermal resistance of thin films

    Science.gov (United States)

    Polanco, Carlos; Zhang, Jingjie; Ghosh, Avik

    2014-03-01

    The challenge to minimize interfacial thermal resistance is to allow a broad band spectrum of phonons, with non-linear dispersion and well defined translational and rotational symmetries, to cross the interface. We explain how to minimize this resistance using a frequency dependent broadening matrix that generalizes the notion of acoustic impedance to the whole phonon spectrum including symmetries. We show how to ``match'' two given materials by joining them with a single atomic layer, with a multilayer material and with a graded superlattice. Atomic layer ``matching'' requires a layer with a mass close to the arithmetic mean (or spring constant close to the harmonic mean) to favor high frequency phonon transmission. For multilayer ``matching,'' we want a material with a broadening close to the geometric mean to maximize transmission peaks. For graded superlattices, a continuous sequence of geometric means translates to an exponentially varying broadening that generates a wide-band antireflection coating for both the coherent and incoherent limits. Our results are supported by ``first principles'' calculations of thermal conductance for GaAs / Gax Al1 - x As / AlAs thin films using the Non-Equilibrium Greens Function formalism coupled with Density Functional Perturbation Theory. NSF-CAREER (QMHP 1028883), NSF-IDR (CBET 1134311), XSEDE.

  18. Thermally stimulated nonlinear refraction in gelatin stabilized Cu-PVP nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tamgadge, Y. S., E-mail: ystamgadge@gmail.com; Atkare, D. V. [Department of Physics, Mahatma Fule Arts, Commerce & SitaramjiChoudhari Science College, Warud, Dist. Amravati (MS), India-444906 (India); Pahurkar, V. G.; Muley, G. G., E-mail: gajananggm@yahoo.co.in [Department of Physics, SantGadge Baba Amravati University, Amravati (MS), India-444602 (India); Talwatkar, S. S. [Department of Physics, D K Marathe and N G Acharya College, Chembur, Mumbai (MS), India-440071 (India); Sunatkari, A. L. [Department of Physics, Siddharth College of Arts, Science and Commerce, Fort, Mumbai (MS), India-440001 (India)

    2016-05-06

    This article illustrates investigations on thermally stimulated third order nonlinear refraction of Cu-PVP nanocomposite thin films. Cu nanoparticles have been synthesized using chemical reduction method and thin films in PVP matrix have been obtained using spin coating technique. Thin films have been characterized by X-ray diffraction (XRD) and Ultraviolet-visible (UV-vis) spectroscopyfor structural and linear optical studies. Third order nonlinear refraction studies have been performed using closed aperture z-scan technique under continuous wave (CW) He-Ne laser. Cu-PVP nanocomposites are found to exhibit strong nonlinear refractive index stimulated by thermal lensing effect.

  19. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Administrator

    3. Mobility activation in CdSe thin films. The trap depths were calculated by using the following simple decay law. It = Ioexp(–pt),. (1) where p is the probability of escape of an electron from the trap per second and is given by (Randall and Wilkins 1945) p = S exp (–E/kT),. (2) where E is the trap depth for electrons below the ...

  20. The thickness of DLC thin film affects the thermal conduction of HPLED lights

    Science.gov (United States)

    Hsu, Ming Seng; Huang, Jen Wei; Shyu, Feng Lin

    2016-09-01

    Thermal dissipation had an important influence in the quantum effect and life of light emitting diodes (LED) because it enabled heat transfer away from electric devices to the aluminum plate for heat removal. In the industrial processing, the quality of the thermal dissipation was decided by the gumming technique between the PCB and aluminum plate. In this study, we made the ceramic thin films of diamond like carbon (DLC) by vacuum sputtering between the substrate and high power light emitting diodes (HPLED) light to check the influence of heat transfer by DLC thin films. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature of HPLEDs. The X-Ray photoelectron spectroscopy (XPS) patterns revealed that ceramic phases were successfully grown onto the substrate. At the same time, the real work temperatures showed the thickness of DLC thin film coating effectively affected the thermal conduction of HPLEDs.

  1. Effect of electronic contribution on temperature-dependent thermal transport of antimony telluride thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Won-Yong; Park, No-Won [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Hong, Ji-Eun [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Yoon, Soon-Gil, E-mail: sgyoon@cnu.ac.kr [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Koh, Jung-Hyuk [School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Lee, Sang-Kwon, E-mail: sangkwonlee@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2015-01-25

    Highlights: • We investigated thermal transport of the antimony telluride thin films. • The contribution of the electronic thermal conductivity increased up to ∼77% at 300 K. • We theoretically analyze and explain the high contribution of electronic component. - Abstract: We study the theoretical and experimental characteristics of thermal transport of 100 nm and 500 nm-thick antimony telluride (Sb{sub 2}Te{sub 3}) thin films prepared by radio frequency magnetron sputtering. The thermal conductivity was measured at temperatures ranging from 20 to 300 K, using four-point-probe 3-ω method. Out-of-plane thermal conductivity of the Sb{sub 2}Te{sub 3} thin film was much lesser in comparison to the bulk material in the entire temperature range, confirming that the phonon- and electron-boundary scattering are enhanced in thin films. Moreover, we found that the contribution of the electronic thermal conductivity (κ{sub e}) in total thermal conductivity (κ) linearly increased up to ∼77% at 300 K with increasing temperature. We theoretically analyze and explain the high contribution of electronic component of thermal conductivity towards the total thermal conductivity of the film by a modified Callaway model. Further, we find the theoretical model predictions to correspond well with the experimental results.

  2. Fabrication of thermally evaporated Al thin film on cylindrical PET monofilament for wearable computing devices

    Science.gov (United States)

    Liu, Yang; Kim, Eunju; Han, Jeong In

    2016-01-01

    During the initial development of wearable computing devices, the conductive fibers of Al thin film on cylindrical PET monofilament were fabricated by thermal evaporation. Their electrical current-voltage characteristics curves were excellent for incorporation into wearable devices such as fiber-based cylindrical capacitors or thin film transistors. Their surfaces were modified by UV exposure and dip coating of acryl or PVP to investigate the surface effect. The conductive fiber with PVP coating showed the best conductivities because the rough surface of the PET substrate transformed into a smooth surface. The conductivities of PET fiber with and without PVP were 6.81 × 103 Ω-1cm-1 and 5.62 × 103 Ω-1cm-1, respectively. In order to understand the deposition process of Al thin film on cylindrical PET, Al thin film on PET fiber was studied using SEM (Scanning Electron Microscope), conductivities and thickness measurements. Hillocks on the surface of conductive PET fibers were observed and investigated by AFM on the surface. Hillocks were formed and grown during Al thermal evaporation because of severe compressive strain and plastic deformation induced by large differences in thermal expansion between PET substrate and Al thin film. From the analysis of hillock size distribution, it turns out that hillocks grew not transversely but longitudinally. [Figure not available: see fulltext.

  3. Experimental Investigation of Zinc Antimonide Thin Films under Different Thermal Boundary Conditions

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rosendahl, Lasse Aistrup; Rezaniakolaei, Alireza

    for all cases, showing that the electrical potential difference is increasing by temperature for all cases with the same slope. Also the value of Seebeck coefficient (α) is almost constant for all cases. The obtained value of α can compete with developed bulk TEG materials in literature. The thin film...... is able to operate in relatively high range of temperature with long working period without failure. Furthermore, effects of implementing thermal cycling on stability analysis of a TEG sample are considered. By testing the thermoelectric thin film specimen during a thermal cycling, behavior of the TEG...

  4. Sensitive coating for water vapors detection based on thermally sputtered calcein thin films.

    Science.gov (United States)

    Kruglenko, I; Shirshov, Yu; Burlachenko, J; Savchenko, A; Kravchenko, S; Manera, M G; Rella, R

    2010-09-15

    In this paper the adsorption properties of thermally sputtered calcein thin films towards water and other polar molecules vapors are studied by different characterization techniques: quartz crystal microbalance, surface plasmon resonance and visible spectroscopy. Sensitivity of calcein thin films to water vapors resulted much higher as compared with those of a number of dyes whose structure was close to that of calcein. All types of sensors with calcein coatings have demonstrated linear concentration dependences in the wide range of water vapor pressure from low concentrations up to 27,000 ppm (close to saturation). At higher concentrations of water vapor all sensors demonstrate the abrupt increase of the response (up to two orders). A theoretical model is advanced explaining the adsorption properties of calcein thin films taking into account their chemical structure and peculiarities of molecular packing. The possibility of application of thermally sputtered calcein films in sensing technique is discussed. Copyright (c) 2010 Elsevier B.V. All rights reserved.

  5. Using high thermal stability flexible thin film thermoelectric generator at moderate temperature

    Science.gov (United States)

    Zheng, Zhuang-Hao; Luo, Jing-Ting; Chen, Tian-Bao; Zhang, Xiang-Hua; Liang, Guang-Xing; Fan, Ping

    2018-04-01

    Flexible thin film thermoelectric devices are extensively used in the microscale industry for powering wearable electronics. In this study, comprehensive optimization was conducted in materials and connection design for fabricating a high thermal stability flexible thin film thermoelectric generator. First, the thin films in the generator, including the electrodes, were prepared by magnetron sputtering deposition. The "NiCu-Cu-NiCu" multilayer electrode structure was applied to ensure the thermal stability of the device used at moderate temperature in an air atmosphere. A design with metal layer bonding and series accordant connection was then employed. The maximum efficiency of a single PN thermocouple generator is >11%, and the output power loss of the generator is <10% after integration.

  6. Development of a micro-thermal flow sensor with thin-film thermocouples

    Science.gov (United States)

    Kim, Tae Hoon; Kim, Sung Jin

    2006-11-01

    A micro-thermal flow sensor is developed using thin-film thermocouples as temperature sensors. A micro-thermal flow sensor consists of a heater and thin-film thermocouples which are deposited on a quartz wafer using stainless steel masks. Thin-film thermocouples are made of standard K-type thermocouple materials. The mass flow rate is measured by detecting the temperature difference of the thin-film thermocouples located in the upstream and downstream sections relative to a heater. The performance of the micro-thermal flow sensor is experimentally evaluated. In addition, a numerical model is presented and verified by experimental results. The effects of mass flow rate, input power, and position of temperature sensors on the performance of the micro-thermal flow sensor are experimentally investigated. At low values, the mass flow rate varies linearly with the temperature difference. The linearity of the micro-thermal flow sensor is shown to be independent of the input power. Finally, the position of the temperature sensors is shown to affect both the sensitivity and the linearity of the micro-thermal flow sensor.

  7. Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD

    Science.gov (United States)

    Li, Hongbo

    2007-09-01

    With the worldwide growing concern about reliable energy supply and the environmental problems of fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic systems, can play a major role in the urgently needed energy transition in electricity production. Solar cells based on thin film silicon and its alloys are a promising candidate that is capable of fulfilling the fast increasing demand of a reliable solar cell supply. The conventional method to deposit silicon thin films is based on plasma enhanced chemical vapour deposition (PECVD) techniques, which have the disadvantage of increasing film inhomogeneity at a high deposition rate when scaling up for the industrial production. In this thesis, we study the possibility of making high efficiency single and multijunction thin film silicon solar cells with the so-called hot-wire CVD technique, in which no strong electromagnetic field is involved in the deposition. Therefore, the up-scaling for industrial production is straightforward. We report and discuss our findings on the correlation of substrate surface rms roughness and the main output parameter of a solar cell, the open circuit voltage Voc of c-Si:H n i p cells. By considering all the possible reasons that could influence the Voc of such cells, we conclude that the near linear correlation of Voc and substrate surface rms roughness is the result the two most probable reasons: the unintentional doping through the cracks originated near the valleys of the substrate surface due to the in-diffusion of impurities, and the high density electrical defects formed by the collision of columnar silicon structures. Both of them relate to the morphology of substrate surface. Therefore, to have the best cell performance on a rough substrate surface, a good control on the substrate surface morphology is necessary. Another issue influencing the performance of c-Si:H solar cells is the

  8. Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

    Science.gov (United States)

    Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

    2017-03-01

    The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

  9. Structural, morphological and optical properties of thermal annealed TiO thin films

    International Nuclear Information System (INIS)

    Zribi, M.; Kanzari, M.; Rezig, B.

    2008-01-01

    Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 deg. C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO 2 phase for the annealing temperature above 400 deg. C

  10. Electrical transport properties of thermally evaporated phthalocyanine (H 2Pc) thin films

    Science.gov (United States)

    El-Nahass, M. M.; Farid, A. M.; Attia, A. A.; Ali, H. A. M.

    2006-08-01

    Thin films of H 2Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path ( lo) of charge carriers in H 2Pc thin films was attempted. Measurements of thermoelectric power confirm that H 2Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H 2Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility ( μh), the total trap concentration ( Nt), the characteristic temperature ( Tt) and the trap density P( E).

  11. Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-06

    Herein we show characterization of an Fe thin film on Al_2O_3 after thermal annealing under H_2 using Al Ka X-rays. The XPS survey spectrum, narrow Fe 2p scan, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al_2O_3 film during Fe nanoparticle formation.

  12. Effect of Thermal Cycling on Zinc Antimonide Thin Film Thermoelectric Characteristics

    DEFF Research Database (Denmark)

    Mirhosseini, M.; Rezania, A.; Rosendahl, L.

    2017-01-01

    In this study, performance and stability of zinc antimonide thin film thermoelectric sample is analyzed under transient thermal conditions. The thermoelectric materials are deposited on glass based substrate where the heat flow is parallel with the thermoelectric element length. The specimen...

  13. Thermal and structural properties of spray pyrolysed CdS thin film

    Indian Academy of Sciences (India)

    Unknown

    Thermal diffusivity and conductivity in these films decrease at least two orders compared with bulk. ... Afifi et al. (1986) prepared evaporated thin film on glass substrate. ... phase of CdS and the identification of the peaks indicate that the film is ...

  14. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  15. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    International Nuclear Information System (INIS)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

    2011-01-01

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  16. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

    2011-10-15

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  17. Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate

    Science.gov (United States)

    Wang, C. P.; Dai, T.; Lu, Y.; Shi, Z.; Ruan, J. J.; Guo, Y. H.; Liu, X. J.

    2017-08-01

    Copper thin films with thickness of about 500 nm doped with different aluminum concentrations have been prepared by magnetron sputtering on Si substrate and their crystal structure, microstructure, and electrical resistivity after annealing at various temperatures (200°C to 600°C) for 1 h or at 400°C for different durations (1 h to 11 h) investigated by grazing-incidence x-ray diffraction (GIXRD) analysis, scanning electron microscopy (SEM), and four-point probe (FPP) measurements. Cu-1.8Al alloy thin film exhibited good thermal stability and low electrical resistivity (˜5.0 μΩ cm) after annealing at 500°C for 1 h or 400°C for 7 h. No copper silicide was observed at the Cu-Al/Si interface by GIXRD analysis or SEM for this sample. This result indicates that doping Cu thin film with small amounts of Al can achieve high thermal stability and low electrical resistivity, suggesting that Cu-1.8Al alloy thin film could be used for barrierless Cu metallization on Si substrate.

  18. Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

    2016-08-01

    The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

  19. Linear Coefficient of Thermal Expansion of Porous Anodic Alumina Thin Films from Atomic Force Microscopy

    OpenAIRE

    Zhang, Richard X; Fisher, Timothy; Raman, Arvind; Sands, Timothy D

    2009-01-01

    In this article, a precise and convenient technique based on the atomic force microscope (AFM) is developed to measure the linear coefficient of thermal expansion of a porous anodic alumina thin film. A stage was used to heat the sample from room temperature up to 450 K. Thermal effects on AFM probes and different operation modes at elevated temperatures were also studied, and a silicon AFM probe in the tapping mode was chosen for the subsequent measurements due to its temperature insensitivi...

  20. Semiconducting Properties of Nanostructured Amorphous Carbon Thin Films Incorporated with Iodine by Thermal Chemical Vapor Deposition

    Science.gov (United States)

    Kamaruzaman, Dayana; Ahmad, Nurfadzilah; Annuar, Ishak; Rusop, Mohamad

    2013-11-01

    Nanostructured iodine-post doped amorphous carbon (a-C:I) thin films were prepared from camphor oil using a thermal chemical vapor deposition (TCVD) technique at different doping temperatures. The structural properties of the films were studied by field-emission scanning electron microscopy (FESEM), energy-dispersive spectroscopy (EDS), Raman, and Fourier transform infrared (FTIR) studies. FESEM and EDS studies showed successful iodine doping. FTIR and Raman studies showed that the a-C:I thin films consisted of a mixture of sp2- and sp3-bonded carbon atoms. The optical and electrical properties of a-C:I thin films were determined by UV-vis-NIR spectroscopy and current-voltage (I-V) measurement respectively. The optical band gap of a-C thin films decreased upon iodine doping. The highest electrical conductivity was found at 400 °C doping. Heterojunctions are confirmed by rectifying the I-V characteristics of an a-C:I/n-Si junction.

  1. Doping dependence of electrical and thermal conductivity of nanoscale polyaniline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jin Jiezhu; Wang Qing [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Haque, M A [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2010-05-26

    We performed simultaneous characterization of electrical and thermal conductivity of 55 nm thick polyaniline (PANI) thin films doped with different levels of camphor sulfonic acids (CSAs). The effect of the doping level is more pronounced on electrical conductivity than on thermal conductivity of PANIs, thereby greatly affecting their ratio that determines the thermoelectric efficiency. At the 60% (the molar ratio of CSA to phenyl-N repeat unit of PANI) doping level, PANI exhibited the maximum electrical and thermal conductivity due to the formation of mostly delocalized structures. Whereas polarons are the charge carriers responsible for the electrical conduction, phonons are believed to play a dominant role in the heat conduction in nanoscale doped PANI thin films.

  2. Rapid thermal annealing of Ti-rich TiNi thin films: A new approach to fabricate patterned shape memory thin films

    International Nuclear Information System (INIS)

    Motemani, Y.; Tan, M.J.; White, T.J.; Huang, W.M.

    2011-01-01

    This paper reports the rapid thermal annealing (RTA) of Ti-rich TiNi thin films, synthesized by the co-sputtering of TiNi and Ti targets. Long-range order of aperiodic alloy could be achieved in a few seconds with the optimum temperature of 773 K. Longer annealing (773 K/240 s), transformed the film to a poorly ordered vitreous phase, suggesting a novel method for solid state amorphization. Reitveld refinement analyses showed significant differences in structural parameters of the films crystallized by rapid and conventional thermal annealing. Dependence of the elastic modulus on the valence electron density (VED) of the crystallized films was studied. It is suggested that RTA provides a new approach to fabricate patterned shape memory thin films.

  3. Thermal conductivity of silicon nanocrystals and polystyrene nanocomposite thin films

    International Nuclear Information System (INIS)

    Juangsa, Firman Bagja; Muroya, Yoshiki; Nozaki, Tomohiro; Ryu, Meguya; Morikawa, Junko

    2016-01-01

    Silicon nanocrystals (SiNCs) are well known for their size-dependent optical and electronic properties; they also have the potential for low yet controllable thermal properties. As a silicon-based low-thermal conductivity material is required in microdevice applications, SiNCs can be utilized for thermal insulation. In this paper, SiNCs and polymer nanocomposites were produced, and their thermal conductivity, including the density and specific heat, was measured. Measurement results were compared with thermal conductivity models for composite materials, and the comparison shows a decreasing value of the thermal conductivity, indicating the effect of the size and presence of the nanostructure on the thermal conductivity. Moreover, employing silicon inks at room temperature during the fabrication process enables a low cost of fabrication and preserves the unique properties of SiNCs. (paper)

  4. Narrow thermal hysteresis of NiTi shape memory alloy thin films with submicrometer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Huilong; Hamilton, Reginald F., E-mail: rfhamilton@psu.edu; Horn, Mark W. [Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-09-15

    NiTi shape memory alloy (SMA) thin films were fabricated using biased target ion beam deposition (BTIBD), which is a new technique for fabricating submicrometer-thick SMA thin films, and the capacity to exhibit shape memory behavior was investigated. The thermally induced shape memory effect (SME) was studied using the wafer curvature method to report the stress-temperature response. The films exhibited the SME in a temperature range above room temperature and a narrow thermal hysteresis with respect to previous reports. To confirm the underlying phase transformation, in situ x-ray diffraction was carried out in the corresponding phase transformation temperature range. The B2 to R-phase martensitic transformation occurs, and the R-phase transformation is stable with respect to the expected conversion to the B19′ martensite phase. The narrow hysteresis and stable R-phase are rationalized in terms of the unique properties of the BTIBD technique.

  5. APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics

    Science.gov (United States)

    KC, Pratik; Rai, Amit; Ashton, Taylor S.; Moore, Arden L.

    2017-12-01

    The ability of graphene to serve as an ultrathin heat spreader has been previously demonstrated with impressive results. However, graphene is electrically conductive, making its use in contact with electronic devices problematic from a reliability and integration perspective. As an alternative, hexagonal boron nitride (h-BN) is a similarly structured material with large in-plane thermal conductivity but which possesses a wide band gap, thereby giving it potential to be utilized for directing contact, near-junction thermal management of electronics without shorting or the need for an insulating intermediate layer. In this work, the viability of using large area, continuous h-BN thin films as direct contact, near-junction heat spreaders for electronic devices is experimentally evaluated. Thin films of h-BN several square millimeters in size were synthesized via an atmospheric pressure chemical vapor deposition (APCVD) method that is both simple and scalable. These were subsequently transferred onto a microfabricated test device that simulated a multigate transistor while also allowing for measurements of the device temperature at various locations via precision resistance thermometry. Results showed that these large-area h-BN films with thicknesses of 77-125 nm are indeed capable of significantly lowering microdevice temperatures, with the best sample showing the presence of the h-BN thin film reduced the effective thermal resistance by 15.9% ± 4.6% compared to a bare microdevice at the same power density. Finally, finite element simulations of these experiments were utilized to estimate the thermal conductivity of the h-BN thin films and identify means by which further heat spreading performance gains could be attained.

  6. Unique Crystal Orientation of Poly(ethylene oxide) Thin Films by Crystallization Using a Thermal Gradient

    DEFF Research Database (Denmark)

    Gbabode, Gabin; Delvaux, Maxime; Schweicher, Guillaume

    2017-01-01

    Poly(ethylene oxide), (PEO), thin films of different thicknesses (220, 450, and 1500 nm) and molecular masses (4000, 8000, and 20000 g/mol) have been fabricated by spin-coating of methanol solutions onto glass substrates. All these samples have been recrystallized from the melt using a directional......, to significantly decrease the distribution of crystal orientation obtained after crystallization using the thermal gradient technique....

  7. FABRICATION OF Cu-Al-Ni SHAPE MEMORY THIN FILM BY THERMAL EVOPRATION

    OpenAIRE

    Özkul, İskender; Canbay, Canan Aksu; Tekataş, Ayşe

    2017-01-01

    Among the functional, materials shape memory alloysare important because of their unique properties. So, these materials haveattracted more attention to be used in micro/nano electronic andelectromechanic systems. In this work, thermal evaporation method has been usedto produce CuAlNi shape memory alloy thin film. The produced CuAlNi thin filmhas been characterized and the presence of the martensite phase wasinvestigated and compared with the CuAlNi alloy sample. CuAlNi shape memoryalloy thin...

  8. Thermal dewetting behavior of polystyrene composite thin films with organic-modified inorganic nanoparticles.

    Science.gov (United States)

    Kubo, Masaki; Takahashi, Yosuke; Fujii, Takeshi; Liu, Yang; Sugioka, Ken-ichi; Tsukada, Takao; Minami, Kimitaka; Adschiri, Tadafumi

    2014-07-29

    The thermal dewetting of polystyrene composite thin films with oleic acid-modified CeO2 nanoparticles prepared by the supercritical hydrothermal synthesis method was investigated, varying the nanoparticle concentration (0-30 wt %), film thickness (approximately 50 and 100 nm), and surface energy of silanized silicon substrates on which the composite films were coated. The dewetting behavior of the composite thin films during thermal annealing was observed by an optical microscope. The presence of nanoparticles in the films affected the morphology of dewetting holes, and moreover suppressed the dewetting itself when the concentration was relatively high. It was revealed that there was a critical value of the surface energy of the substrate at which the dewetting occurred. In addition, the spatial distributions of nanoparticles in the composite thin films before thermal annealing were investigated using AFM and TEM. As a result, we found that most of nanoparticles segregated to the surface of the film, and that such distributions of nanoparticles contribute to the stabilization of the films, by calculating the interfacial potential of the films with nanoparticles.

  9. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    Science.gov (United States)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  10. Distribution analysis of thermal effusivity for sub-micrometer YBCO thin films using thermal microscope

    International Nuclear Information System (INIS)

    Yagi, T.; Taketoshi, N.; Kato, H.

    2004-01-01

    Thermal effusivity measurements have been carried out for sub-micrometer YBCO superconducting films using thermal microscope based upon thermoreflectance technique. Two samples were prepared: c-axis aligned YBCO thin films with 800 nm in thickness synthesized on MgO and SrTiO 3 substrates. Measured thermal effusivities perpendicular to the surface, i.e. in parallel with c-axis were determined to be 1770 J/m 2 s 0.5 K on MgO substrate and 1420 J/m 2 s 0.5 K for that on SrTiO 3 substrate, respectively. The scatter of the measurements is estimated to be lower than ±5.2%. These values are consistent with reported values of YBCO single crystal in the direction of c-axis. In addition, 2D profiling image, that is, in-plane distribution of thermal effusivity was well obtained for the YBCO film on MgO substrate by operating this thermal microscope in a scanning mode. Its standard deviation of the in-plane thermal effusivity scattering due to the non-uniformity is evaluated to be ±5.7%

  11. Application of rapid thermal processing on SiNx thin film to solar cells

    Institute of Scientific and Technical Information of China (English)

    Youjie LI; Peiqing LUO; Zhibin ZHOU; Rongqiang CUI; Jianhua HUANG; Jingxiao WANG

    2008-01-01

    Rapid thermal processing (RTP) of SiNx thin films from PECVD with low temperature was investigated. A special processing condition of this technique which could greatly increase the minority lifetime was found in the experiments. The processing mechanism and the application of the technique to silicon solar cells fabrication were dis-cussed. A main achievement is an increase of the minority lifetime in silicon wafer with SiNx thin film by about 200% after the RTP was reached. PC-1D simulation results exhibit an enhancement of the efficiency of the solar cell by 0.42% coming from the minority lifetime improvement. The same experiment was also conducted with P-diffusion silicon wafers, but the increment of minority lifetime is just about 55%. It could be expected to improve the solar cell efficiency if it would be used in silicon solar cells fabrication with the combination of laser firing contact technique.

  12. The effect of thermal annealing on pentacene thin film transistor with micro contact printing.

    Science.gov (United States)

    Shin, Hong-Sik; Yun, Ho-Jin; Baek, Kyu-Ha; Ham, Yong-Hyun; Park, Kun-Sik; Kim, Dong-Pyo; Lee, Ga-Won; Lee, Hi-Deok; Lee, Kijun; Do, Lee-Mi

    2012-07-01

    We used micro contact printing (micro-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-microm channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS) elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope (SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2), which was investigated with the pentacene films phase change of the XRD spectrum after device annealing.

  13. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    International Nuclear Information System (INIS)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

    2015-01-01

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  14. Influence of thin film nickel pretreatment on catalytic thermal chemical vapor deposition of carbon nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Tiggelaar, R.M. [Mesoscale Chemical Systems, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Thakur, D.B.; Nair, H.; Lefferts, L.; Seshan, K. [Catalytic Processes and Materials, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Gardeniers, J.G.E., E-mail: j.g.e.gardeniers@utwente.nl [Mesoscale Chemical Systems, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2013-05-01

    Nickel and other metal nanoparticles are known to be active as catalysts in the synthesis of carbon nanofibers. In this paper we investigate how dewetting and break-up of nickel thin films depends on film thickness, film–substrate interaction and pretreatment conditions. This is evaluated for films evaporated on oxidized silicon and fused silica substrates with or without tantalum coating, which were subsequently exposed to different pretreatment atmospheres (vacuum, nitrogen, air and hydrogen; 1 h, 650 °C). Atomic force microscopy, scanning electron microscopy and energy dispersive X-ray analysis were used to characterize the films. Pretreated Ni films were subjected to a thermal catalytic chemical vapor deposition procedure with brief ethylene exposures (0.5–3 min, 635 °C). It was found that only on the spherical nanoparticles originating from a hydrogen pretreatment of a Ni film with Ta adhesion layer, homogeneously distributed, randomly-oriented, well-attached, and semi-crystalline carbon nanofibers be synthesized. - Highlights: • On the formation of nanoparticles required for carbon nanofiber (CNF) synthesis • Various evaporated thin films on oxidized silicon and fused silica: Ni and Ni/Ta • Pretreatment of nickel-based thin films in vacuum, nitrogen, air and hydrogen • Only on reduced Ni/Ta fast – within 3 min – initiation of CNF nucleation and growth.

  15. Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

    International Nuclear Information System (INIS)

    Tariq, G.H.; Anis-ur-Rehman, M.

    2011-01-01

    The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

  16. Development of In-plane Thermal Conductivity Calculation Methods in Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. Barinov

    2017-01-01

    Full Text Available The future nanoelectronics development involves using the smaller- -and-smaller-sized circuit components based on the micro- and nanostructures. This causes a growth of the specific heat flows up to 100 W/cm2. Since performance of electronic devices is strongly dependent on the temperature there is a challenge to create the heat transfer models, which take into account the size effect and ensure a reliable estimate of the thermal conductivity. This is one of the crucial tasks for development of new generations of integrated circuits.The paper studies heat transfer processes using the silicon thin films as an example. Thermal conductivity calculations are performed taking into account the influence of the classical size effect in the context of the Sondheimer model based on the solution of the Boltzmann transport equation.The paper, for the first time, presents and considers the influence of various factors on the thermal conductivity of thin films, namely temperature, film thickness, polarization of the phonon waves (transverse and longitudinal, velocity and relaxation time versus frequency for the phonons of different wave types.Based on the analysis, three models with different accuracy are created to estimate the influence of detailing processes under consideration on the thermal conductivity in a wide range of temperatures (from 10 K to 450 К and film thickness (from 10 nm to 100 µm.So in the model I for the first time in calculating thermal conductivity of thin films we properly and circumstantially take into account the dependence of the velocity and the relaxation time of phonons on the frequency and polarization. The obtained values are in a good agreement with available experimental data and theoretical models of other authors. In the following models we use few average methods for relaxation times and velocities, which leads to significant reduction in calculating accuracy up to the values exceeding 100%.Therefore, when calculating

  17. Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

    KAUST Repository

    Singh, Shivkant

    2018-05-17

    The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

  18. Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

    KAUST Repository

    Singh, Shivkant; Shervin, Shahab; Sun, Haiding; Yarali, Milad; Chen, Jie; Lin, Ronghui; Li, Kuang-Hui; Li, Xiaohang; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

    2018-01-01

    The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

  19. Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

    Directory of Open Access Journals (Sweden)

    Sarita Boolchandani

    2018-01-01

    Full Text Available The indium selenium (InSe bilayer thin films of various thickness ratios, InxSe(1-x (x = 0.25, 0.50, 0.75, were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe and aluminum selenide (AlSe bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

  20. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  1. Phonon and thermal properties of exfoliated TaSe{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Z.; Jiang, C.; Renteria, J. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Salguero, T. T., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States)

    2013-11-28

    We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe{sub 2}) obtained via the “graphene-like” mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E{sub 2g} peak of TaSe{sub 2} presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A{sub 1g} and E{sub 2g}, are −0.013 and −0.0097 cm{sup −1}/{sup o}C, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ∼16 W/mK to ∼9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe{sub 2} channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe{sub 2} and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

  2. Phonon and thermal properties of exfoliated TaSe2 thin films

    International Nuclear Information System (INIS)

    Yan, Z.; Jiang, C.; Renteria, J.; Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Salguero, T. T.; Goli, P.; Balandin, A. A.

    2013-01-01

    We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe 2 ) obtained via the “graphene-like” mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E 2g peak of TaSe 2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A 1g and E 2g , are −0.013 and −0.0097 cm −1 / o C, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ∼16 W/mK to ∼9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe 2 channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe 2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials

  3. Phonon and thermal properties of exfoliated TaSe2 thin films

    Science.gov (United States)

    Yan, Z.; Jiang, C.; Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Goli, P.; Renteria, J.; Salguero, T. T.; Balandin, A. A.

    2013-11-01

    We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the "graphene-like" mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E2g peak of TaSe2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A1g and E2g, are -0.013 and -0.0097 cm-1/oC, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ˜16 W/mK to ˜9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe2 channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

  4. Determining the thermal expansion coefficient of thin films for a CMOS MEMS process using test cantilevers

    International Nuclear Information System (INIS)

    Cheng, Chao-Lin; Fang, Weileun; Tsai, Ming-Han

    2015-01-01

    Many standard CMOS processes, provided by existing foundries, are available. These standard CMOS processes, with stacking of various metal and dielectric layers, have been extensively applied in integrated circuits as well as micro-electromechanical systems (MEMS). It is of importance to determine the material properties of the metal and dielectric films to predict the performance and reliability of micro devices. This study employs an existing approach to determine the coefficients of thermal expansion (CTEs) of metal and dielectric films for standard CMOS processes. Test cantilevers with different stacking of metal and dielectric layers for standard CMOS processes have been designed and implemented. The CTEs of standard CMOS films can be determined from measurements of the out-of-plane thermal deformations of the test cantilevers. To demonstrate the feasibility of the present approach, thin films prepared by the Taiwan Semiconductor Manufacture Company 0.35 μm 2P4M CMOS process are characterized. Eight test cantilevers with different stacking of CMOS layers and an auxiliary Si cantilever on a SOI wafer are fabricated. The equivalent elastic moduli and CTEs of the CMOS thin films including the metal and dielectric layers are determined, respectively, from the resonant frequency and static thermal deformation of the test cantilevers. Moreover, thermal deformations of cantilevers with stacked layers different to those of the test beams have been employed to verify the measured CTEs and elastic moduli. (paper)

  5. Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics

    Science.gov (United States)

    Shu, Deming; Shvydko, Yury; Stoupin, Stanislav; Kim, Kwang-Je

    2018-05-08

    A method and mechanical design for a thin-film diamond crystal mounting apparatus for coherence preservation x-ray optics with optimized thermal contact and minimized crystal strain are provided. The novel thin-film diamond crystal mounting apparatus mounts a thin-film diamond crystal supported by a thick chemical vapor deposition (CVD) diamond film spacer with a thickness slightly thicker than the thin-film diamond crystal, and two groups of thin film thermal conductors, such as thin CVD diamond film thermal conductor groups separated by the thick CVD diamond spacer. The two groups of thin CVD film thermal conductors provide thermal conducting interface media with the thin-film diamond crystal. A piezoelectric actuator is integrated into a flexural clamping mechanism generating clamping force from zero to an optimal level.

  6. Wide-range measurement of thermal effusivity using molybdenum thin film with low thermal conductivity for thermal microscopes

    Science.gov (United States)

    Miyake, Shugo; Matsui, Genzou; Ohta, Hiromichi; Hatori, Kimihito; Taguchi, Kohei; Yamamoto, Suguru

    2017-07-01

    Thermal microscopes are a useful technology to investigate the spatial distribution of the thermal transport properties of various materials. However, for high thermal effusivity materials, the estimated values of thermophysical parameters based on the conventional 1D heat flow model are known to be higher than the values of materials in the literature. Here, we present a new procedure to solve the problem which calculates the theoretical temperature response with the 3D heat flow and measures reference materials which involve known values of thermal effusivity and heat capacity. In general, a complicated numerical iterative method and many thermophysical parameters are required for the calculation in the 3D heat flow model. Here, we devised a simple procedure by using a molybdenum (Mo) thin film with low thermal conductivity on the sample surface, enabling us to measure over a wide thermal effusivity range for various materials.

  7. DLC and AlN thin films influence the thermal conduction of HPLED light

    Science.gov (United States)

    Hsu, Ming Seng; Hsu, Ching Yao; Huang, Jen Wei; Shyu, Feng Lin

    2015-08-01

    Thermal dissipation had an important influence in the effect and life of light emitting diodes (LED) because it enables transfer the heat away from electric device to the aluminum plate that can be used for heat removal. In the industrial processing, the quality of the thermal dissipation decides by the gumming technique between the PCB and aluminum plate. In this study, we fabricated double layer ceramic thin films of diamond like carbon (DLC) and alumina nitride (AlN) by vacuum sputtering soldered the substrate of high power light emitting diodes (HPLED) light to check the heat conduction. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray photoelectron spectroscopy (XPS) patterns reveal those ceramic phases were successfully grown onto the substrate. The work temperatures show DLC and AlN films coating had limited the heat transfer by the lower thermal conductivity of these ceramic films. Obviously, it hadn't transferred heat and limited work temperature of HPLED better than DLC thin film only.

  8. Origin of thermally stable ferroelectricity in a porous barium titanate thin film synthesized through block copolymer templating

    Directory of Open Access Journals (Sweden)

    Norihiro Suzuki

    2017-07-01

    Full Text Available A porous barium titanate (BaTiO3 thin film was chemically synthesized using a surfactant-assisted sol-gel method in which micelles of amphipathic diblock copolymers served as structure-directing agents. In the Raman spectrum of the porous BaTiO3 thin film, a peak corresponding to the ferroelectric tetragonal phase was observed at around 710 cm−1, and it remained stable at much higher temperature than the Curie temperature of bulk single-crystal BaTiO3 (∼130 °C. Measurements revealed that the ferroelectricity of the BaTiO3 thin film has high thermal stability. By analyzing high-resolution transmission electron microscope images of the BaTiO3 thin film by the fast Fourier transform mapping method, the spatial distribution of stress in the BaTiO3 framework was clearly visualized. Careful analysis also indicated that the porosity in the BaTiO3 thin film introduced anisotropic compressive stress, which deformed the crystals. The resulting elongated unit cell caused further displacement of the Ti4+ cation from the center of the lattice. This displacement increased the electric dipole moment of the BaTiO3 thin film, effectively enhancing its ferro(piezoelectricity.

  9. Thermal pulse measurements of space charge distributions under an applied electric field in thin films

    International Nuclear Information System (INIS)

    Zheng, Feihu; An, Zhenlian; Zhang, Yewen; Liu, Chuandong; Lin, Chen; Lei, Qingquan

    2013-01-01

    The thermal pulse method is a powerful method to measure space charge and polarization distributions in thin dielectric films, but a complicated calibration procedure is necessary to obtain the real distribution. In addition, charge dynamic behaviour under an applied electric field cannot be observed by the classical thermal pulse method. In this work, an improved thermal pulse measuring system with a supplemental circuit for applying high voltage is proposed to realize the mapping of charge distribution in thin dielectric films under an applied field. The influence of the modified measuring system on the amplitude and phase of the thermal pulse response current are evaluated. Based on the new measuring system, an easy calibration approach is presented with some practical examples. The newly developed system can observe space charge evolution under an applied field, which would be very helpful in understanding space charge behaviour in thin films. (paper)

  10. Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors

    Science.gov (United States)

    Sun, Yifei; Narayanachari, K. V. L. V.; Wan, Chenghao; Sun, Xing; Wang, Haiyan; Cooley, Kayla A.; Mohney, Suzanne E.; White, Doug; Duwel, Amy; Kats, Mikhail A.; Ramanathan, Shriram

    2018-03-01

    We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ˜60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.

  11. Evolution of lateral ordering in symmetric block copolymer thin films upon rapid thermal processing

    International Nuclear Information System (INIS)

    Ceresoli, Monica; Ferrarese Lupi, Federico; Seguini, Gabriele; Perego, Michele; Sparnacci, Katia; Gianotti, Valentina; Antonioli, Diego; Laus, Michele; Boarino, Luca

    2014-01-01

    This work reports experimental findings about the evolution of lateral ordering of lamellar microdomains in symmetric PS-b-PMMA thin films on featureless substrates. Phase separation and microdomain evolution are explored in a rather wide range of temperatures (190–340 °C) using a rapid thermal processing (RTP) system. The maximum processing temperature that enables the ordering of block copolymers without introducing any significant degradation of macromolecules is identified. The reported results clearly indicate that the range of accessible temperatures in the processing of these self-assembling materials is mainly limited by the thermal instability of the grafted random copolymer layer, which starts to degrade at T > 300 °C, inducing detachment of the block copolymer thin film. For T ⩽ 290 °C, clear dependence of correlation length (ξ) values on temperature is observed. The highest level of lateral order achievable in the current system in a quasi-equilibrium condition was obtained at the upper processing temperature limit after an annealing time as short as 60 s. (paper)

  12. Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching

    Energy Technology Data Exchange (ETDEWEB)

    Correa, Diogo S. [Universidade Federal de Pelotas (UFPel), RS (Brazil). Centro de Ciencias Quimicas, Farmaceuticas e de Alimentos; Pazinato, Julia C.O.; Freitas, Mauricio A. de; Radtke, Claudio; Garcia, Irene T.S., E-mail: irene@iq.ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil). Instituto de Quimica; Dorneles, Lucio S. [Universidade Federal de Santa Maria (UFSM), RS (Brazil). Centro de Ciencias Naturais e Exatas

    2014-05-15

    Tungsten oxides show different stoichiometries, crystal lattices and morphologies. These characteristics are important mainly when they are used as photocatalysts. In this work tungsten oxide thin films were obtained by thermal evaporation on (100) silicon substrates covered with gold and heated at 350 and 600 °C, with different deposition times. The stoichiometry of the films, morphology, crystal structure and resistance to leaching were characterized through X-ray photoelectron spectroscopy, micro-Raman spectroscopy, scanning and transmission electron microscopy, X-ray diffractometry, Rutherford backscattering spectrometry and O{sup 16} (α,α')O{sup 16} resonant nuclear reaction. Films obtained at higher temperatures show well-defined spherical nanometric structure; they are composed of WO{sub 3.1} and the presence of hydrated tungsten oxide was also observed. The major crystal structure observed is the hexagonal. Thin films obtained through thermal evaporation present resistance to leaching in aqueous media and excellent performance as photocatalysts, evaluated through the degradation of the methyl orange dye. (author)

  13. Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S.S.; Shinde, P.S.; Oh, Y.W.; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

    2012-01-01

    Highlights: ► The ecofriendly deposition of Ga-doped zinc oxide. ► Influence of Ga doping onto physicochemical properties in aqueous media. ► Electron–phonon coupling by Raman. ► Chemical bonding structure and valence band analysis by XPS. - Abstract: Ga-doped ZnO thin films are synthesized by chemical spray pyrolysis onto corning glass substrates in aqueous media. The influence of gallium doping on to the photoelectrochemical, structural, Raman, XPS, morphological, optical, electrical, photoluminescence and thermal properties have been investigated in order to achieve good quality films. X-ray diffraction study depicts the films are polycrystalline and fit well with hexagonal (wurtzite) crystal structure with strong orientations along the (0 0 2) and (1 0 1) planes. Presence of E 2 high mode in Raman spectra indicates that the gallium doping does not change the wurtzite structure. The coupling strength between electron and LO phonon has experimentally estimated. In order to understand the chemical bonding structure and electronic states of the Ga-doped ZnO thin films XPS analysis have been studied. SEM images shows the films are adherent, compact, densely packed with hexagonal flakes and spherical grains. Optical transmittance and reflectance measurements have been carried out. Room temperature PL spectra depict violet, blue and green emission in deposited films. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in these polycrystalline films.

  14. Thermal-induced SPR tuning of Ag-ZnO nanocomposite thin film for plasmonic applications

    Science.gov (United States)

    Singh, S. K.; Singhal, R.

    2018-05-01

    The formation of silver (Ag) nanoparticles in a ZnO matrix were successfully synthesized by RF-magnetron sputtering at room temperature. As prepared Ag-ZnO nanocomposite (NCs) thin films were annealed in vacuum at three different temperatures of 300 °C, 400 °C and 500 °C, respectively. The structural modifications for as-deposited and annealed films were estimated by X-ray diffraction and TEM techniques. The crystalline behavior preferably along the c-axis of the hexagonal wurtzite structure was observed in as-deposited Ag-ZnO film and improved significantly with increasing the annealing temperature. The crystallite size of as-deposited film was measured to be 13.6 nm, and increases up to 28.5 nm at higher temperatures. The chemical composition and surface structure of the as-deposited films were estimated by X-ray photoelectron spectroscopy. The presence of Ag nanoparticles with average size of 8.2 ± 0.2 nm, was confirmed by transmission electron microscopy. The strong surface plasmon resonance (SPR) band was observed at the wavelength of ∼565 nm for as-deposited film and a remarkable red shift of ∼22 nm was recorded after the annealing treatment as confirmed by UV-visible spectroscopy. Atomic force microscopy confirmed the grain growth from 60.38 nm to 79.42 nm for as-deposited and higher temperature annealed film respectively, with no significant change in the surface roughness. Thermal induced modifications such as disordering and lattice defects in Ag-ZnO NCs thin films were carried out by Raman spectroscopy. High quality Ag-ZnO NCs thin films with minimum strain and tunable optical properties could be useful in various plasmonic applications.

  15. Thermally evaporated thin films of SnS for application in solar cell devices

    International Nuclear Information System (INIS)

    Miles, Robert W.; Ogah, Ogah E.; Zoppi, Guillaume; Forbes, Ian

    2009-01-01

    SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS 2 , Sn 2 S 3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto glass and SnO 2 :coated glass substrates with the aim of optimising the properties of the material for use in photovoltaic solar cell device structures. In particular the effects of source temperature, substrate temperature, deposition rate and film thickness on the chemical and physical properties of the layers were investigated. Energy dispersive X-ray analysis was used to determine the film composition, X-ray diffraction to determine the phases present and structure of each phase, transmittance and reflectance versus wavelength measurements to determine the energy bandgap and scanning electron microscopy to observe the surface topology and topography and the properties correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free, conformal to the substrate and that consist of densely packed columnar grains. The composition, phases present and the optical properties of the layers deposited were found to be highly sensitive to the deposition conditions. Energy bandgaps in the range 1.55 eV-1.7 eV were obtained for a film thickness of 0.8 μm, and increasing the film thickness to > 1 μm resulted in a reduction of the energy bandgap to less than 1.55 eV. The applicability of using these films in photovoltaic solar cell device structures is also discussed.

  16. Alternative nano-structured thin-film materials used as durable thermal nanoimprint lithography templates

    Science.gov (United States)

    Bossard, M.; Boussey, J.; Le Drogoff, B.; Chaker, M.

    2016-02-01

    Nanoimprint templates made of diamond-like carbon (DLC) and amorphous silicon carbide (SiC) thin films and fluorine-doped associated materials, i.e. F-DLC and F-SiC were investigated in the context of thermal nanoimprint lithography (NIL) with respect to their release properties. Their performances in terms of durability and stability were evaluated and compared to those of conventional silicon or silica molds coated with antisticking molecules applied as a self-assembled monolayer. Plasma-enhanced chemical vapor deposition parameters were firstly tuned to optimize mechanical and structural properties of the DLC and SiC thin films. The impact of the amount of fluorine dopant on the deposited thin films properties was then analyzed. A comparative analysis of DLC, F-DLC as well as SiC and F-SiC molds was then carried out over multiple imprints, performed into poly (methyl methacrylate) (PMMA) thermo-plastic resist. The release properties of un-patterned films were evaluated by the measurement of demolding energies and surface energies, associated with a systematic analysis of the mold surface contamination. These analyses showed that the developed materials behave as intrinsically easy-demolding and contamination-free molds over series of up to 40 imprints. To our knowledge, it is the first time that such a large number of imprints has been considered within an exhaustive comparative study of materials for NIL. Finally, the developed materials went through standard e-beam lithography and plasma etching processes to obtain nanoscale-patterned templates. The replicas of those patterned molds, imprinted into PMMA, were shown to be of high fidelity and good stability after several imprints.

  17. Effect of nitrogen doping on the thermal conductivity of GeTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fallica, Roberto; Longo, Massimo; Wiemer, Claudia [Laboratorio MDM, IMM-CNR, Agrate Brianza (Italy); Varesi, Enrico; Fumagalli, Luca; Spadoni, Simona [Micron Semiconductor Italia, Agrate Brianza (Italy)

    2013-12-15

    The 3{omega} method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (-25%) than in the crystalline one (-40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO{sub 2}, within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Effect of temperature oscillation on thermal characteristics of an aluminum thin film

    Science.gov (United States)

    Ali, H.; Yilbas, B. S.

    2014-12-01

    Energy transport in aluminum thin film is examined due to temperature disturbance at the film edge. Thermal separation of electron and lattice systems is considered in the analysis, and temperature variation in each sub-system is formulated. The transient analysis of frequency-dependent and frequency-independent phonon radiative transport incorporating electron-phonon coupling is carried out in the thin film. The dispersion relations of aluminum are used in the frequency-dependent analysis. Temperature at one edge of the film is oscillated at various frequencies, and temporal response of phonon intensity distribution in the film is predicted numerically using the discrete ordinate method. To assess the phonon transport characteristics, equivalent equilibrium temperature is introduced. It is found that equivalent equilibrium temperature in the electron and lattice sub-systems oscillates due to temperature oscillation at the film edge. The amplitude of temperature oscillation reduces as the distance along the film thickness increases toward the low-temperature edge of the film. Equivalent equilibrium temperature attains lower values for the frequency-dependent solution of the phonon transport equation than that corresponding to frequency-independent solution.

  19. Fabrication and characterization of In2S3 thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Timoumi, A.; Bouzouita, H.; Kanzari, M.; Rezig, B.

    2005-01-01

    Indium sulphide, In 2 S 3 , thin films present an alternative to conventional CdS films as buffer layer for CIS-based thin film solar cells. The objective is to eliminate toxic cadmium for environmental reasons. Indium sulphide is synthesized and deposited by single source vacuum thermal evaporation method on glass substrates. The films are analyzed by X-ray diffraction (XRD) and spectrophotometric measurements. They have a good crystallinity, homogeneity and adhesion. The X-ray diffraction analysis confirmed the initial amorphous nature of the deposited InS film and phase transition into crystalline In 2 S 3 formed upon annealing at free air for 250 deg. C substrate temperature for 2 h. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range of 300-1800 nm. We note that the films annealed at 250 deg. C for 2 h show a good homogeneity with 80% transmission. An analysis of the optical absorption data of the deposited films revealed an optical direct band gap energy in the range of 2.0-2.2 eV

  20. Effect of substrate properties and thermal annealing on the resistivity of molybdenum thin films

    International Nuclear Information System (INIS)

    Schmid, U.; Seidel, H.

    2005-01-01

    In this study, the influence of substrate properties (e.g. roughness characteristics and chemical composition) on the electrical resistivity of evaporated molybdenum thin films is investigated as a function of varying parameters, such as film thickness (25-115 nm) and post-deposition annealing with temperatures up to T PDA = 900 deg. C. A thermally oxidized silicon wafer with very low surface roughness was used as one substrate type. In contrast, a low temperature co-fired ceramics substrate with a glass encapsulant printed in thick film technology is the representative for rough surface morphology. The electrical resistivity follows the prediction of the size effect up to T PDA = 600 deg. C independent of substrate nature. On the silicon-based substrate, the thickness-independent portion of the film resistivity ρ g in the 'as deposited' state is about 29 times higher than the corresponding bulk value for a mono-crystalline sample. Thin films of this refractory metal on the SiO 2 /Si substrate exhibit an average grain size of 4.9 nm and a negative temperature coefficient of resistivity (TCR). On the glass/ceramic-based substrate, however, ρ g is half the value as compared to that obtained on the SiO 2 /Si substrate and the TCR is positive

  1. Thermal Molding of Organic Thin-Film Transistor Arrays on Curved Surfaces.

    Science.gov (United States)

    Sakai, Masatoshi; Watanabe, Kento; Ishimine, Hiroto; Okada, Yugo; Yamauchi, Hiroshi; Sadamitsu, Yuichi; Kudo, Kazuhiro

    2017-12-01

    In this work, a thermal molding technique is proposed for the fabrication of plastic electronics on curved surfaces, enabling the preparation of plastic films with freely designed shapes. The induced strain distribution observed in poly(ethylene naphthalate) films when planar sheets were deformed into hemispherical surfaces clearly indicated that natural thermal contraction played an important role in the formation of the curved surface. A fingertip-shaped organic thin-film transistor array molded from a real human finger was fabricated, and slight deformation induced by touching an object was detected from the drain current response. This type of device will lead to the development of robot fingers equipped with a sensitive tactile sense for precision work such as palpation or surgery.

  2. Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

    KAUST Repository

    Salas Villaseñor, Ana L.

    2014-06-01

    Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

  3. Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

    KAUST Repository

    Salas Villaseñ or, Ana L.; Mejia, Israel I.; Sotelo-Lerma, Mé rida; Guo, Zaibing; Alshareef, Husam N.; Quevedo-Ló pez, Manuel Angel Quevedo

    2014-01-01

    Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

  4. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  5. Characterization of Hf/Mg co-doped ZnO thin films after thermal treatments

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chih-Hung; Chung, Hantsun [Graduate Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Jian-Zhang, E-mail: jchen@ntu.edu.tw [Graduate Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan (China); Cheng, I-Chun, E-mail: iccheng@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2014-11-03

    Rf-sputtered Mg{sub 0.05}Zn{sub 0.95}O thin films become amorphous/nanocrystalline with the addition of hafnium oxide. All films (thickness: ∼ 100 nm) sputter-deposited from Hf{sub x}Mg{sub 0.05}Zn{sub 0.95−x}O targets are highly transparent (> 80%) from 400 to 800 nm. The Tauc bandgap ΔE (eV) increases with the Hf content. However, the bandgap decreases after thermal treatment. The reduction in the bandgap is positively correlated with the Hf content and annealing temperature. The residual stresses of films sputtered from Mg{sub 0.05}Zn{sub 0.95}O and Hf{sub 0.025}Mg{sub 0.05}Zn{sub 0.925}O targets are determined based on X-ray diffraction (XRD) data using a bi-axial stress model. The residual stresses of as-deposited films are compressive. As the annealing temperature increases, the residual stresses are relaxed and even become tensile. The bandgap narrowing after thermal treatment is attributed to the stress relaxation that changes the repulsion between the oxygen 2p and zinc 4s bands. Slight grain growth may also result in bandgap reduction because bandgap modification caused by the quantum confinement effect becomes significant in amorphous/nanocrystalline materials. The amorphous thin films reveal good thermal stability after 600 °C annealing for up to 2 h, as evidenced by the XRD and transmission spectra. - Highlights: • Thin films are sputtered from Hf{sub x}Mg{sub 0.05}Zn{sub 0.95−x}O targets at room temperature. • Bandgap increases with Hf content but decreases with post-annealing temperature. • Bandgap narrowing after annealing partly results from the relaxation of stresses. • Bandgap narrowing partly results from quantum confinement effect by nanomaterials. • Hf doping increases resistivity due to the lattice disorder and enlarged bandgap.

  6. Effect of Al doping on phase formation and thermal stability of iron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Mukul, E-mail: mgupta@csr.res.in [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Pandey, Nidhi [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Horisberger, Michael [Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stahn, Jochen [Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

    2015-11-25

    In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe–N) thin films. Fe–N thin films with different concentration of Al (Al = 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe–N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich non-magnetic Fe–N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe–N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe–N and Al–N. - Highlights: • Doping effects of Al on Fe–N phase formation is studied. • Phase formation shows a non-monotonic behavior with Al doping. • Low doping levels of Al enhance and high levels retard the nitridation process. • Al doping beyond 3 at.% improve thermal stability of Fe–N films.

  7. Cuprous oxide thin films prepared by thermal oxidation of copper layer. Morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Karapetyan, Artak, E-mail: karapetyan@cinam.univ-mrs.fr [Aix Marseille Université, CINaM, 13288, Marseille (France); Institute for Physical Research of NAS of Armenia, Ashtarak-2 0203 (Armenia); Reymers, Anna [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Giorgio, Suzanne; Fauquet, Carole [Aix Marseille Université, CINaM, 13288, Marseille (France); Sajti, Laszlo [Laser Zentrum Hannover e.V. Hollerithallee 8, 30419 Hannover (Germany); Nitsche, Serge [Aix Marseille Université, CINaM, 13288, Marseille (France); Nersesyan, Manuk; Gevorgyan, Vladimir [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Marine, Wladimir [Aix Marseille Université, CINaM, 13288, Marseille (France)

    2015-03-15

    Structural and optical characterization of crystalline Cu{sub 2}O thin films obtained by thermal oxidation of Cu films at two different temperatures 800 °C and 900 °C are investigated in this work. X-ray diffraction measurements indicate that synthesized films consist of single Cu{sub 2}O phase without any interstitial phase and show a nano-grain structure. Scanning Electron Microscopy observations indicate that the Cu{sub 2}O films have a micro-scale roughness whereas High Resolution Transmission Electron Microscopy highlights that the nanocrystalline structure is formed by superposition of nearly spherical nanocrystals smaller than 30 nm. Photoluminescence spectra of these films exhibit at room temperature two well-resolved emission peaks at 1.34 eV due to defects energy levels and at 1.97 eV due to phonon-assisted recombination of the 1s orthoexciton in both film series. Emission characteristics depending on the laser power is deeply investigated to determine the origin of recorded emissions. Time-integrated spectra of the 1s orthoexciton emission reveals the presence of oxygen defects below the conduction band edge under non-resonant two-photon excitation using a wide range of excitations wavelengths. Optical absorption coefficients at room temperature are obtained from an accurate analysis of their transmission and reflection spectra, whereas the optical band gap energy is estimated at about 2.11 eV. Results obtained are of high relevance especially for potential applications in semiconductor devices such as solar cells, optical sources and detectors. - Highlights: • Nanostructured Cu{sub 2}O thin films were synthesized by thermal oxidation of Cu films. • The PL spectra of nanostructured thin films revealed two well-resolved emission peaks. • The PL properties were investigated under a broad range of experimental conditions. • Inter-band transition in the infrared range has been associated to V{sub Cu} and V{sub O} vacancies. • Absorption

  8. Synthesis of nanocrystalline ceria thin films by low-temperature thermal decomposition of Ce-propionate

    International Nuclear Information System (INIS)

    Roura, P.; Farjas, J.; Ricart, S.; Aklalouch, M.; Guzman, R.; Arbiol, J.; Puig, T.; Calleja, A.; Peña-Rodríguez, O.; Garriga, M.; Obradors, X.

    2012-01-01

    Thin films of Ce-propionate (thickness below 20 nm) have been deposited by spin coating and pyrolysed into ceria at temperatures below 200 °C. After 1 h of thermal treatment, no signature of the vibrational modes of Ce-propionate is detected by infrared spectroscopy, indicating that decomposition has been completed. The resulting ceria films are nanocrystalline as revealed by X-ray diffraction (average grain size of 2–2.5 nm) and confirmed by microscopy. They are transparent in the visible region and show the characteristic band gap absorption below 400 nm. A direct band gap energy of 3.50 ± 0.05 eV has been deduced irrespective of the pyrolysis temperature (160, 180 and 200 °C).

  9. The anomalous low temperature resistivity of thermally evaporated α-Mn thin film

    International Nuclear Information System (INIS)

    Ampong, F.K.; Boakye, F.; Nkum, R.K.

    2010-01-01

    Electrical resistivity measurements have been carried out on thermally evaporated α-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10 -6 Torr. The results show a resistance minimum, a notable characteristic of α-Mn but at a (rather high) temperature of 194±1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 μΩm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

  10. The anomalous low temperature resistivity of thermally evaporated alpha-Mn thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ampong, F.K., E-mail: kampxx@yahoo.co [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana); Boakye, F.; Nkum, R.K. [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana)

    2010-08-15

    Electrical resistivity measurements have been carried out on thermally evaporated alpha-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10{sup -6} Torr. The results show a resistance minimum, a notable characteristic of alpha-Mn but at a (rather high) temperature of 194+-1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 muOMEGAm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

  11. Highly transparent, flexible, and thermally stable superhydrophobic ORMOSIL aerogel thin films.

    Science.gov (United States)

    Budunoglu, Hulya; Yildirim, Adem; Guler, Mustafa O; Bayindir, Mehmet

    2011-02-01

    We report preparation of highly transparent, flexible, and thermally stable superhydrophobic organically modified silica (ORMOSIL) aerogel thin films from colloidal dispersions at ambient conditions. The prepared dispersions are suitable for large area processing with ease of coating and being directly applicable without requiring any pre- or post-treatment on a variety of surfaces including glass, wood, and plastics. ORMOSIL films exhibit and retain superhydrophobic behavior up to 500 °C and even on bent flexible substrates. The surface of the films can be converted from superhydrophobic (contact angle of 179.9°) to superhydrophilic (contact angle of <5°) by calcination at high temperatures. The wettability of the coatings can be changed by tuning the calcination temperature and duration. The prepared films also exhibit low refractive index and high porosity making them suitable as multifunctional coatings for many application fields including solar cells, flexible electronics, and lab on papers.

  12. Thin film tritium dosimetry

    Science.gov (United States)

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  13. Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

    NARCIS (Netherlands)

    Coloma Ribera, R.

    2017-01-01

    This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

  14. Magnetic field and temperature dependent measurements of hall coefficient in thermal evaporated Tin-Doped Cadmium Oxide Thin films

    International Nuclear Information System (INIS)

    Hamadi, O.; Shakir, N.; Mohammed, F.

    2010-01-01

    CdO:Sn thin films are deposited onto glass substrates by thermal evaporation under vacuum. The studied films are polycrystalline and have an NaCl structure. The Hall effect is studied for films with different thickness as substrates are maintained at different temperatures. The temperature dependence of the Hall mobility is also investigated. (authors)

  15. Development of Ultrafast Laser Flash Methods for Measuring Thermophysical Properties of Thin Films and Boundary Thermal Resistances

    Science.gov (United States)

    Baba, Tetsuya; Taketoshi, Naoyuki; Yagi, Takashi

    2011-11-01

    Reliable thermophysical property values of thin films are important to develop advanced industrial technologies such as highly integrated electronic devices, phase-change memories, magneto-optical disks, light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), semiconductor lasers (LDs), flat-panel displays, and power electronic devices. In order to meet these requirements, the National Metrology Institute of Japan of the National Institute of Advanced Industrial Science and Technology (NMIJ/AIST) has developed ultrafast laser flash methods heated by picosecond pulse or nanosecond pulse with the same geometrical configuration as the laser flash method, which is the standard method to measure the thermal diffusivity of bulk materials. Since these pulsed light heating methods induce one-dimensional heat diffusion across a well-defined length of the specimen thickness, the absolute value of thermal diffusivity across thin films can be measured reliably. Using these ultrafast laser flash methods, the thermal diffusivity of each layer of multilayered thin films and the boundary thermal resistance between the layers can be determined from the observed transient temperature curves based on the response function method. The thermophysical properties of various thin films important for modern industries such as the transparent conductive films used for flat-panel displays, hard coating films, and multilayered films of next-generation phase-change optical disks have been measured by these methods.

  16. Thermal treatment influence on the preparation of BPSCCO superconductor thin films

    International Nuclear Information System (INIS)

    Torsoni, Guilherme Botega; Carvalho, Claudio Luiz

    2011-01-01

    Full text: Nowadays, with the evolution of technology, superconducting thin films application in microelectronics is essential for production of some equipment with reduced size and low energy consumption. There are different ways to prepare thin films, however deposition in liquid phase have received special attention, whose main features are: fast deposition, reduced cost and the possibility of covering large areas. Basically, the method consists to deposit a polymeric precursor solution, with synthesis based on the methodology developed by M. Pechini, on a crystalline substrate using a spin coating equipment also called spinner. In the deposition process by spinner, must be considered some physical parameters, such as, rotation speed, viscosity solution, substrate acceleration and rotating time, evaporation rate and temperature solution. Immediately after the deposition, the material is submitted to different thermal treatments, this consists of two stages, in other words, calcination and sintering stages. The objective of the first stage is to remove the organic compounds, which can be done at temperatures around 500 deg C - 600 deg C, and the other stage, it can be done around 750 deg C and 850 deg C, it means the same interval of phase formation. In this work, films were made with five layers of deposition on Si substrate in three different sintering temperatures, 750, 800 and 850 deg C and it was studied the evolution of the films due to thermal treatment applied. Characterizations were made by x-ray diffraction, microscopy by field emission gun and energy dispersive x-ray (EDS). X-ray diffractograms shown that 2212 phase was obtained in all samples submitted to different temperatures, for higher sintering temperature was not observed any kind of crystalline planes orientation and the electron microscopy and EDS showed that the films are also more homogeneous. (author)

  17. Thermal Vapor Deposition and Characterization of Polymer-Ceramic Nanoparticle Thin Films and Capacitors

    Science.gov (United States)

    Iwagoshi, Joel A.

    Research on alternative energies has become an area of increased interest due to economic and environmental concerns. Green energy sources, such as ocean, wind, and solar power, are subject to predictable and unpredictable generation intermittencies which cause instability in the electrical grid. This problem could be solved through the use of short term energy storage devices. Capacitors made from composite polymer:nanoparticle thin films have been shown to be an economically viable option. Through thermal vapor deposition, we fabricated dielectric thin films composed of the polymer polyvinylidine fluoride (PVDF) and the ceramic nanoparticle titanium dioxide (TiO2). Fully understanding the deposition process required an investigation of electrode and dielectric film deposition. Film composition can be controlled by the mass ratio of PVDF:TiO2 prior to deposition. An analysis of the relationship between the ratio of PVDF:TiO2 before and after deposition will improve our understanding of this novel deposition method. X-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy were used to analyze film atomic concentrations. The results indicate a broad distribution of deposited TiO2 concentrations with the highest deposited amount at an initial mass concentration of 17% TiO2. The nanoparticle dispersion throughout the film is analyzed through atomic force microscopy and energy dispersive x-ray spectroscopy. Images from these two techniques confirm uniform TiO2 dispersion with cluster size less than 300 nm. These results, combined with spectroscopic analysis, verify control over the deposition process. Capacitors were fabricated using gold parallel plates with PVDF:TiO 2 dielectrics. These capacitors were analyzed using the atomic force microscope and a capacohmeter. Atomic force microscope images confirm that our gold films are acceptably smooth. Preliminary capacohmeter measurements indicate capacitance values of 6 nF and break down voltages of 2.4 V

  18. Fast Adaptive Thermal Camouflage Based on Flexible VO₂/Graphene/CNT Thin Films.

    Science.gov (United States)

    Xiao, Lin; Ma, He; Liu, Junku; Zhao, Wei; Jia, Yi; Zhao, Qiang; Liu, Kai; Wu, Yang; Wei, Yang; Fan, Shoushan; Jiang, Kaili

    2015-12-09

    Adaptive camouflage in thermal imaging, a form of cloaking technology capable of blending naturally into the surrounding environment, has been a great challenge in the past decades. Emissivity engineering for thermal camouflage is regarded as a more promising way compared to merely temperature controlling that has to dissipate a large amount of excessive heat. However, practical devices with an active modulation of emissivity have yet to be well explored. In this letter we demonstrate an active cloaking device capable of efficient thermal radiance control, which consists of a vanadium dioxide (VO2) layer, with a negative differential thermal emissivity, coated on a graphene/carbon nanotube (CNT) thin film. A slight joule heating drastically changes the emissivity of the device, achieving rapid switchable thermal camouflage with a low power consumption and excellent reliability. It is believed that this device will find wide applications not only in artificial systems for infrared camouflage or cloaking but also in energy-saving smart windows and thermo-optical modulators.

  19. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  20. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  1. Enhancement of YBCO thin film thermal stability under 1 ATM oxygen pressure by Intermediate Cu.sub.2./sub. O nanolayer

    Czech Academy of Sciences Publication Activity Database

    Cheng, L.; Wang, X.; Yao, X.; Wan, W.; Li, F.H.; Xiong, J.; Tao, B.W.; Jirsa, Miloš

    2010-01-01

    Roč. 114, č. 22 (2010), s. 7543-7547 ISSN 1520-6106 R&D Projects: GA MŠk(CZ) ME10069 Institutional research plan: CEZ:AV0Z10100520 Keywords : YBCO thin films * thermal stability * thin film growth orientation * temperature optical microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.603, year: 2010

  2. Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrate

    International Nuclear Information System (INIS)

    Brooks, K.G.; Reaney, I.M.; Klissurska, R.; Huang, Y.; Bursill, L.A.; Setter, N.

    1994-01-01

    The nucleation, growth and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, excess lead addition, and Nb dopant substitution are reported. The use of post pyrolysis oxygen anneals at temperatures in the regime of 350-450 deg C was found to strongly effect the kinetics of subsequent amorphous-pyrochlore perovskite crystallization by rapid thermal annealing. It has also allowed films of reproducible microstructure and textures (both (100) and (111)) to be prepared by rapid thermal annealing. It is suggested that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. The changes in Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization. Nb dopant was also found to influence the crystallization kinetics. 28 refs., 18 figs

  3. An On-Line Method for Thermal Diffusivity Detection of Thin Films Using Infrared Video

    Directory of Open Access Journals (Sweden)

    Dong Huilong

    2016-03-01

    Full Text Available A novel method for thermal diffusivity evolution of thin-film materials with pulsed Gaussian beam and infrared video is reported. Compared with common pulse methods performed in specialized labs, the proposed method implements a rapid on-line measurement without producing the off-centre detection error. Through mathematical deduction of the original heat conduction model, it is discovered that the area s, which is encircled by the maximum temperature curve rTMAX(θ, increases linearly over elapsed time. The thermal diffusivity is acquired from the growth rate of the area s. In this study, the off-centre detection error is avoided by performing the distance regularized level set evolution formulation. The area s was extracted from the binary images of temperature variation rate, without inducing errors from determination of the heat source centre. Thermal diffusivities of three materials, 304 stainless steel, titanium, and zirconium have been measured with the established on-line detection system, and the measurement errors are: −2.26%, −1.07%, and 1.61% respectively.

  4. Thickness dependent ferromagnetism in thermally decomposed NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in

    2016-11-15

    We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50–300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (T{sub A}) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing T{sub A}, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing T{sub A} and changing annealing conditions. - Highlights: • Preparation of highly strained single layer NiO films with different thicknesses. • Study the effects of annealing under different environments on crystal structure. • Understanding the origin of thickness dependent thermal decomposition reaction. • Investigate the role of thermal decomposition reaction on the magnetic properties. • Study the interaction between NiO and Ni phases on the exchange bias mechanism.

  5. Supramolecular structure of a perylene derivative in thin films made by vacuum thermal evaporation

    International Nuclear Information System (INIS)

    Fernandes, Jose Diego

    2015-01-01

    The supramolecular arrangement of organic thin films is a factor that influences both optical and electrical properties of these films and, consequently, the technological applications involving organic electronics. In this dissertation, thin films of a perylene derivative (bis butylimido perylene, acronym BuPTCD) were produced by physical vapor deposition (PVD) using vacuum thermal evaporation. The aim of this work was to investigate the supramolecular arrangement of BuPTCD films, which implies to control the thickness at nanometer scale and to determine the molecular organization, the morphology (at nano and micrometer scales) and the crystallinity, besides the stability of this arrangement as a function of the temperature. Optical properties (such as absorption and emission) and electrical properties (such as conductivity and photoconductivity) were also determined. The UV-Vis absorption spectra revealed a controlled growth (uniform) of the BuPTCD films. Atomic force and optical microscopy images showed a homogeneous surface of the film at nano and micrometer scales, respectively. The X-ray diffraction showed that the BuPTCD powder and PVD film have different crystalline structures, with the BuPTCD molecules head-on oriented in the PVD films, supported on the substrate surface by the side group (FTIR). This structure favors the light emission (photoluminescence) by the formation of excimers. The thermal treatment (200°C for 10 min) does not affect the molecular organization of the PVD films, showing a thermal stability of the BuPTCD supramolecular arrangement under these circumstances. The electrical measurements (DC) showed a linear increase of the current as a function of the tension, which is characteristic of ohmic behavior. Also, the films exhibited an increase of current by 2 orders of magnitude when exposed to light (photoconductive properties). Finally, BuPTCD films were exposed to vapor of trifluoroacetic acid (TFA) to verify the sensitivity of the Bu

  6. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Hyun-Woo Lee

    2018-01-01

    Full Text Available We investigated the effects of vacuum rapid thermal annealing (RTA on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  7. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Science.gov (United States)

    Lee, Hyun-Woo; Cho, Won-Ju

    2018-01-01

    We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  8. Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ling [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049, China and School of Information Science and Engineering, Shandong University, Jinan 250100 (China); Fan, Lina; Li, Yanhuai; Song, Zhongxiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Chunliang, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049 (China)

    2014-03-15

    Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 °C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.

  9. Phase transition and thermal expansion studies of alumina thin films prepared by reactive pulsed laser deposition.

    Science.gov (United States)

    Balakrishnan, G; Thirumurugesan, R; Mohandas, E; Sastikumar, D; Kuppusami, P; Songl, J I

    2014-10-01

    Aluminium oxide (Al2O3) thin films were deposited on Si (100) substrates at an optimized oxygen partial pressure of 3 x 10(-3) mbar at room temperature by pulsed laser deposition (PLD). The films were characterized by high temperature X-ray diffraction (HTXRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The HTXRD pattern showed the cubic y-Al2O3 phase in the temperature range 300-973 K. At temperatures ≥ 1073 K, the δ and θ-phases of Al2O3 were observed. The mean linear thermal expansion coefficient and volume thermal expansion coefficient of γ-Al2O3 was found to be 12.66 x 10(-6) K(-1) and 38.87 x 10(-6) K(-1) in the temperature range 300 K-1073 K. The field emission scanning electron microscopy revealed a smooth and structureless morphology of the films deposited on Si (100). The atomic force microscopy study indicated the increased crystallinity and surface roughness of the films after annealing at high temperature.

  10. Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [1010]ZnO(0002)//[1120]Al 2 O 3 (0002) coexisted with a small amount of ZnO (1011) and ZnO (1013) crystals on the Al 2 O 3 (0001) substrate. The ZnO (1011) and ZnO (1013) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 deg. C improves the crystalline and the photoluminescence more significantly than annealing in air, N 2 and O 2 ambient; it also tends to convert the crystal from ZnO (1011) and ZnO (1013) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects

  11. The measuring technique developed to evaluate the thermal diffusivity of the multi-layered thin film specimens

    Directory of Open Access Journals (Sweden)

    Li Tse-Chang

    2017-01-01

    Full Text Available In the present study, the thermal diffusivities of the Al, Si and ITO films deposited on the SUS304 steel substrate are evaluated via the present technique. Before applying this technique, the temperature for the thin film of the multi-layered specimen is developed theoretically for the one- dimensional steady heat conduction in response to amplitude and frequency of the periodically oscillating temperature imposed by a peltier placed beneath the specimen's substrate. By the thermal-electrical data processing system excluding the lock-in amplifier, the temperature frequency a3 has been proved first to be independent of the electrical voltage applied to the peltier and the contact position of the thermocouples. The experimental data of phase difference for three kinds of specimen are regressed well by a straight line with a slope. Then, the thermal diffusivity of the thin film is thus determined if the slope value and the film- thickness are available. In the present arrangements for the thermocouples, two thermal diffusivity values are quite close each other and valid for every kind of specimen. This technique can provide an efficient, low-cost method for the thermal diffusivity measurements of thin films.

  12. Textured indium tin oxide thin films by chemical solution deposition and rapid thermal processing

    International Nuclear Information System (INIS)

    Mottern, Matthew L.; Tyholdt, Frode; Ulyashin, Alexander; Helvoort, Antonius T.J. van; Verweij, Henk; Bredesen, Rune

    2007-01-01

    The microstructure of state-of-the-art chemical solution deposited indium tin oxide thin films typically consists of small randomly oriented grains, high porosity and poor homogeneity. The present study demonstrates how the thin film microstructure can be improved significantly by tailoring the precursor solutions and deposition conditions to be kinetically and thermodynamically favorable for generation of homogeneous textured thin films. This is explained by the occurrence of a single heterogeneous nucleation mechanism. The as-deposited thin films, crystallized at 800 deg. C, have a high apparent density, based on a refractive index of ∼ 1.98 determined by single wavelength ellipsometry at 633 nm. The microstructure of the films consists of columnar grains with preferred orientation as determined by X-ray diffraction and transmission electron microscopy. The resistivity, measured by the four point probe method, is ∼ 2 x 10 -3 Ω cm prior to post-deposition treatments

  13. Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

    National Research Council Canada - National Science Library

    Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

    2002-01-01

    The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

  14. Formation of VO{sub 2} by rapid thermal annealing and cooling of sputtered vanadium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ba, Cheikhou O. F., E-mail: cheikhou.ba.1@ulaval.ca; Fortin, Vincent; Bah, Souleymane T.; Vallée, Réal [Centre d' optique, photonique et laser (COPL), Université Laval, Québec G1V 0A6 (Canada); Pandurang, Ashrit [Thin Films and Photonics Research Group (GCMP), Department of Physics and Astronomy, Université de Moncton, Moncton, New Brunswick E1A 3E9 (Canada)

    2016-05-15

    Sputtered vanadium-rich films were subjected to rapid thermal annealing-cooling (RTAC) in air to produce vanadium dioxide (VO{sub 2}) thin films with thermochromic switching behavior. High heating and cooling rates in the thermal oxidation process provided an increased ability to control the film's microstructure. X-ray diffraction patterns of the films revealed less intense VO{sub 2} peaks compared to traditional polycrystalline samples fabricated with a standard (slower) cooling time. Such films also exhibit a high optical switching reflectance contrast, unlike the traditional polycrystalline VO{sub 2} thin films, which show a more pronounced transmittance switching. The authors find that the RTAC process stabilizes the VO{sub 2} (M2) metastable phase, enabling a rutile-semiconductor phase transition (R-M2), followed by a semiconductor–semiconductor phase transition (M2-M1).

  15. Improved behavior of cooper-amine complexes during thermal annealing for conductive thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ayag, Kevin Ray; Panama, Gustavo; Paul, Shrabani; Kim, Hong Doo [Dept. of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin (Korea, Republic of)

    2017-02-15

    Previous studies successfully produced conductive thin films from organo-metallic-compounds-based inks. Some inks like those made from copper salt and amines, however, tend to move during thermal annealing and, thus, affect the conductive pattern on the substrate. In this study, conductive inks were synthesized by forming complexes of copper with amines and/or blended amines. To build-up an organo-metallic framework and preserve the pattern throughout the annealing period, diamine was added to the complex in different proportions. The prepared inks were coated on glass substrate and were annealed on a hot plate at 170°C under the gaseous mixture of formic acid and alcohol for 5 min. The metallic film was observed to retain the original pattern of the ink during and after annealing. Adhesion on the substrate was also improved. Inks with blended amines produced films with lower resistivities. The lowest electrical resistivity recorded was 4.99 μΩ cm, three times that of bulk copper.

  16. Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.X. [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Wu, Y.Z., E-mail: youzhiwu@163.com [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); Mu, B. [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Qiao, L. [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Li, W.X.; Li, J.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, P., E-mail: pengwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China)

    2017-03-15

    Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W{sub 2}N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W{sub 2}N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W{sub 2}N phase was negligible. The complete decomposition of W{sub 2}N film happened as the temperature reached up to 1473 K.

  17. Iron doping of lithium niobate by thermal diffusion from thin film: study of the treatment effect

    Energy Technology Data Exchange (ETDEWEB)

    Ciampolillo, Maria Vittoria; Zaltron, Annamaria; Bazzan, Marco; Argiolas, Nicola; Sada, Cinzia [Universita di Padova (Italy); CNISM, Dipartimento di Fisica ' ' G. Galilei' ' , Padova (Italy); Mignoni, Sabrina; Fontana, Marc [Universite de Metz et Supelec, Laboratoire Materiaux Optiques, Photoniques et Systemes, UMR CNRS 7132, Metz (France)

    2011-07-15

    Thermal diffusion from thin film is one of the most widespread approaches to prepare iron doped regions in lithium niobate with limited size for photorefractive applications. In this work, we investigate the doping process with the aim of determining the best process conditions giving a doped region with the characteristics required for photorefractive applications. Six samples were prepared by changing the atmosphere employed in the diffusion treatment in order to obtain different combination of diffusion profiles and reduction degrees and also to check the effect of employing a wet atmosphere. The compositional, optical, and structural properties are then extensively characterized by combining Secondary ion Mass Spectrometry, UV, visible and IR spectrophotometry, High Resolution X-Rays Diffraction, and Micro-Raman Spectroscopy. Moreover, the sample topography was checked by Atomic Force Microscopy. An analysis of all our data shows that the best results are obtained performing a double step process, i.e. diffusion in oxidizing atmosphere and subsequent reduction at lower temperature in an hydrogen-containing atmosphere. (orig.)

  18. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    International Nuclear Information System (INIS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  19. Thermal stability of Ti{sub 3}SiC{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Emmerlich, Jens [Linkoeping University, Department of Physics, IFM, Thin Film Physics Division, SE-581 83 Linkoeping (Sweden)]. E-mail: jenem@ifm.liu.se; Music, Denis [Materials Chemistry, RWTH Aachen University, Kopernikusstrasse 16, D-52074 Aachen (Germany); Eklund, Per [Linkoeping University, Department of Physics, IFM, Thin Film Physics Division, SE-581 83 Linkoeping (Sweden); Wilhelmsson, Ola [Uppsala University, Department of Materials Chemistry, The Angstroem Laboratory, P.O. Box 538, SE-751 21 Uppsala (Sweden); Jansson, Ulf [Uppsala University, Department of Materials Chemistry, The Angstroem Laboratory, P.O. Box 538, SE-751 21 Uppsala (Sweden); Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, Kopernikusstrasse 16, D-52074 Aachen (Germany); Hoegberg, Hans [Linkoeping University, Department of Physics, IFM, Thin Film Physics Division, SE-581 83 Linkoeping (Sweden); Hultman, Lars [Linkoeping University, Department of Physics, IFM, Thin Film Physics Division, SE-581 83 Linkoeping (Sweden)

    2007-02-15

    The thermal stability of Ti{sub 3}SiC{sub 2}(0 0 0 1) thin films is studied by in situ X-ray diffraction analysis during vacuum furnace annealing in combination with X-ray photoelectron spectroscopy, transmission electron microscopy and scanning transmission electron microscopy with energy dispersive X-ray analysis. The films are found to be stable during annealing at temperatures up to {approx}1000 deg. C for 25 h. Annealing at 1100-1200 deg. C results in the rapid decomposition of Ti{sub 3}SiC{sub 2} by Si out-diffusion along the basal planes via domain boundaries to the free surface with subsequent evaporation. As a consequence, the material shrinks by the relaxation of the Ti{sub 3}C{sub 2} slabs and, it is proposed, by an in-diffusion of O into the empty Si-mirror planes. The phase transformation process is followed by the detwinning of the as-relaxed Ti{sub 3}C{sub 2} slabs into (1 1 1)-oriented TiC{sub 0.67} layers, which begin recrystallizing at 1300 deg. C. Ab initio calculations are provided supporting the presented decomposition mechanisms.

  20. Thermal stability of Ti3SiC2 thin films

    International Nuclear Information System (INIS)

    Emmerlich, Jens; Music, Denis; Eklund, Per; Wilhelmsson, Ola; Jansson, Ulf; Schneider, Jochen M.; Hoegberg, Hans; Hultman, Lars

    2007-01-01

    The thermal stability of Ti 3 SiC 2 (0 0 0 1) thin films is studied by in situ X-ray diffraction analysis during vacuum furnace annealing in combination with X-ray photoelectron spectroscopy, transmission electron microscopy and scanning transmission electron microscopy with energy dispersive X-ray analysis. The films are found to be stable during annealing at temperatures up to ∼1000 deg. C for 25 h. Annealing at 1100-1200 deg. C results in the rapid decomposition of Ti 3 SiC 2 by Si out-diffusion along the basal planes via domain boundaries to the free surface with subsequent evaporation. As a consequence, the material shrinks by the relaxation of the Ti 3 C 2 slabs and, it is proposed, by an in-diffusion of O into the empty Si-mirror planes. The phase transformation process is followed by the detwinning of the as-relaxed Ti 3 C 2 slabs into (1 1 1)-oriented TiC 0.67 layers, which begin recrystallizing at 1300 deg. C. Ab initio calculations are provided supporting the presented decomposition mechanisms

  1. Methodology for studying strain inhomogeneities in polycrystalline thin films during in situ thermal loading using coherent x-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Vaxelaire, N; Labat, S; Thomas, O [Aix-Marseille University, IM2NP, FST avenue Escadrille Normandie Niemen, F-13397 Marseille Cedex (France); Proudhon, H; Forest, S [MINES ParisTech, Centre des materiaux, CNRS UMR 7633, BP 87, 91003 Evry Cedex (France); Kirchlechner, C; Keckes, J [Erich Schmid Institute for Material Science, Austrian Academy of Science and Institute of Metal Physics, University of Leoben, Jahnstrasse 12, 8700 Leoben (Austria); Jacques, V; Ravy, S [Synchrotron SOLEIL, L' Orme des merisiers, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex (France)], E-mail: nicolas.vaxelaire@univ-cezanne.fr

    2010-03-15

    Coherent x-ray diffraction is used to investigate the mechanical properties of a single grain within a polycrystalline thin film in situ during a thermal cycle. Both the experimental approach and finite element simulation are described. Coherent diffraction from a single grain has been monitored in situ at different temperatures. This experiment offers unique perspectives for the study of the mechanical properties of nano-objects.

  2. Methodology for studying strain inhomogeneities in polycrystalline thin films during in situ thermal loading using coherent x-ray diffraction

    International Nuclear Information System (INIS)

    Vaxelaire, N; Labat, S; Thomas, O; Proudhon, H; Forest, S; Kirchlechner, C; Keckes, J; Jacques, V; Ravy, S

    2010-01-01

    Coherent x-ray diffraction is used to investigate the mechanical properties of a single grain within a polycrystalline thin film in situ during a thermal cycle. Both the experimental approach and finite element simulation are described. Coherent diffraction from a single grain has been monitored in situ at different temperatures. This experiment offers unique perspectives for the study of the mechanical properties of nano-objects.

  3. Comparison of four-probe thermal and thermoelectric transport measurements of thin films and nanostructures with microfabricated electro-thermal transducers

    Science.gov (United States)

    Kim, Jaehyun; Fleming, Evan; Zhou, Yuanyuan; Shi, Li

    2018-03-01

    Two different four-probe thermal and thermoelectric measurement methods have been reported for measuring the thermal conductivity, Seebeck coefficient, and electrical conductivity of suspended thin films and nanostructures with microfabricated electro-thermal transducers. The thermal contact resistance was extracted from the measured thermoelectric voltage drop at the contacts in the earlier four-probe method based on the assumption of constant thermal and thermoelectric properties along the sample. In comparison, the latter four-probe method can directly obtain the contact thermal resistance together with the intrinsic sample thermal resistance without making this assumption. Here, the measurement theory and data reduction processes of the latter four-probe measurement method are re-examined and improved. The measured thermal conductivity result of this improved method on representative thin film samples are found to agree with those obtained from the earlier four-probe method, which has obtained similar Seebeck coefficient and electrical conductivity as those measured with a different method for a supported thin film. The agreement provides further validation of the latest four-probe thermal transport measurement method of thin films and nanostructures.

  4. Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

    Science.gov (United States)

    Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

    2016-12-01

    In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

  5. Thermal stability of diamond-like carbon–MoS{sub 2} thin films in different environments

    Energy Technology Data Exchange (ETDEWEB)

    Niakan, H., E-mail: hamid.niakan@usask.ca [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Zhang, C. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada); Hu, Y. [Canadian Light Source, 101 Perimeter Road, Saskatoon, SK S7N 0X4 (Canada); Szpunar, J.A.; Yang, Q. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9 (Canada)

    2014-07-01

    Diamond-like carbon (DLC) based coatings are ideal for low friction and wear resistant applications. For those tribological applications, the coatings may expose to high temperature environments. Therefore, the thermal stability of the coating is very important for its long-term performance. In this work, DLC–MoS{sub 2} composite thin films were synthesized using biased target ion beam deposition technique in which MoS{sub 2} was produced by sputtering a MoS{sub 2} target using Ar ion beams while DLC was deposited by an ion source with CH{sub 4} gas as carbon source. DLC films without MoS{sub 2} deposited under similar conditions were used as reference samples. After the deposition, DLC and DLC–MoS{sub 2} thin films were heat-treated in ambient air and low pressure environments at different temperatures ranging from 100 to 600 °C for 2 h. The effect of annealing on the structure, mechanical and tribological properties of the resulting films were studied by means of Raman spectroscopy, X-ray absorption near edge structure, scanning electron microscopy, nanoindentation, and ball-on-disk testing. The results showed that the structure, hardness, Young's modulus, friction coefficient and wear coefficient of the DLC films were stable up to 200 °C annealing in air and 300 °C in low pressure. At higher temperature, the annealing led to the transformation of sp{sup 3} to sp{sup 2}, which degraded the mechanical and tribological properties of the thin films. Comparing with the DLC films, the DLC–MoS{sub 2} thin films showed a slower rate of graphitization and higher structure stability throughout the range of annealing temperatures, indicating a relatively higher thermal stability. - Highlights: • Thermal stability of diamond-like carbon (DLC) and DLC–MoS{sub 2} films were evaluated. • DLC–MoS{sub 2} films can be synthesized by biased target ion beam deposition technique. • Comparing with DLC films, the DLC–MoS{sub 2} thin films showed higher

  6. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  7. Thermal coupling effect on the vortex dynamics of superconducting thin films: time-dependent Ginzburg–Landau simulations

    Science.gov (United States)

    Jing, Ze; Yong, Huadong; Zhou, Youhe

    2018-05-01

    In this paper, vortex dynamics of superconducting thin films are numerically investigated by the generalized time-dependent Ginzburg–Landau (TDGL) theory. Interactions between vortex motion and the motion induced energy dissipation is considered by solving the coupled TDGL equation and the heat diffusion equation. It is found that thermal coupling has significant effects on the vortex dynamics of superconducting thin films. Branching in the vortex penetration path originates from the coupling between vortex motion and the motion induced energy dissipation. In addition, the environment temperature, the magnetic field ramp rate and the geometry of the superconducting film also greatly influence the vortex dynamic behaviors. Our results provide new insights into the dynamics of superconducting vortices, and give a mesoscopic understanding on the channeling and branching of vortex penetration paths during flux avalanches.

  8. Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

    Science.gov (United States)

    Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

    2018-05-01

    Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

  9. Optical and Morphological Studies of Thermally Evaporated PTCDI-C8 Thin Films for Organic Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ronak Rahimi

    2013-01-01

    Full Text Available PTCDI-C8 due to its relatively high photosensitivity and high electron mobility has attracted much attention in organic semiconductor devices. In this work, thin films of PTCDI-C8 with different thicknesses were deposited on silicon substrates with native silicon dioxide using a vacuum thermal evaporator. Several material characterization techniques have been utilized to evaluate the structure, morphology, and optical properties of these films. Their optical constants (refractive index and extinction coefficient have been extracted from the spectroscopic ellipsometry (SE. X-ray reflectivity (XRR and atomic force microscopy (AFM were employed to determine the morphology and structure as well as the thickness and roughness of the PTCDI-C8 thin films. These films revealed a high degree of structural ordering within the layers. All the experimental measurements were performed under ambient conditions. PTCDI-C8 films have shown to endure ambient condition which allows pots-deposition characterization.

  10. Patterning of metallic electrodes on flexible substrates for organic thin-film transistors using a laser thermal printing method

    International Nuclear Information System (INIS)

    Chen, Kun-Tso; Lin, Yu-Hsuan; Ho, Jeng-Rong; Chen, Chih-Kant; Liu, Sung-Ho; Liao, Jin-Long; Cheng, Hua-Chi

    2011-01-01

    We report on a laser thermal printing method for transferring patterned metallic thin films on flexible plastic substrates using a pulsed CO 2 laser. Aluminium and silver line patterns, with micrometre scale resolution on poly(ethylene terephthalate) substrates, are shown. The printed electrodes demonstrate good conductivity and fulfil the properties for bottom-contact organic thin-film transistors. In addition to providing the energy for transferring the film, the absorption of laser light results in a rise in the temperature of the film and the substrate. This also further anneals the film and softens the plastic substrate. Consequently, it is possible to obtain a film with better surface morphology and with its film thickness implanted in part into the plastic surface. This implantation reveals excellent characteristics in adhesion and flexure resistance. Being feasible to various substrates and executable at ambient temperatures renders this approach a potential alternative for patterning metallic electrodes.

  11. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  12. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

    International Nuclear Information System (INIS)

    Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

    2006-01-01

    A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

  14. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  15. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  16. Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Njoroge, E.G., E-mail: eric.njoroge@up.ac.za [Department of Physics, University of Pretoria, Pretoria (South Africa); Theron, C.C. [Department of Physics, University of Pretoria, Pretoria (South Africa); Skuratov, V.A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Wamwangi, D. [School of Physics, University of Witwatersrand, Johannesburg (South Africa); Hlatshwayo, T.T. [Department of Physics, University of Pretoria, Pretoria (South Africa); Comrie, C.M. [MRD, iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Malherbe, J.B. [Department of Physics, University of Pretoria, Pretoria (South Africa)

    2016-03-15

    The solid-state reactions between Pd thin films and 6H-SiC substrates induced by thermal annealing, room temperature swift heavy ion (SHI) irradiation and high temperature SHI irradiation have been investigated by in situ and real-time Rutherford backscattering spectrometry (RBS) and Grazing incidence X-ray diffraction (GIXRD). At room temperature, no silicides were detected to have formed in the Pd/SiC samples. Two reaction growth zones were observed in the samples annealed in situ and analysed by real time RBS. The initial reaction growth region led to formation of Pd{sub 3}Si or (Pd{sub 2}Si + Pd{sub 4}Si) as the initial phase(s) to form at a temperature of about 450 °C. Thereafter, the reaction zone did not change until a temperature of 640 °C was attained where Pd{sub 2}Si was observed to form in the reaction zone. Kinetic analysis of the initial reaction indicates very fast reaction rates of about 1.55 × 10{sup 15} at cm{sup −2}/s and the Pd silicide formed grew linear with time. SHI irradiation of the Pd/SiC samples was performed by 167 MeV Xe{sup 26+} ions at room temperature at high fluences of 1.07 × 10{sup 14} and 4 × 10{sup 14} ions/cm{sup 2} and at 400 °C at lower fluences of 5 × 10{sup 13} ions/cm{sup 2}. The Pd/SiC interface was analysed by RBS and no SHI induced diffusion was observed for room temperature irradiations. The sample irradiated at 400 °C, SHI induced diffusion was observed to occur accompanied with the formation of Pd{sub 4}Si, Pd{sub 9}Si{sub 2} and Pd{sub 5}Si phases which were identified by GIXRD analysis.

  17. Pulsed laser deposition of piezoelectric lead zirconate titanate thin films maintaining a post-CMOS compatible thermal budget

    Science.gov (United States)

    Schatz, A.; Pantel, D.; Hanemann, T.

    2017-09-01

    Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.

  18. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  19. Thermally induced self-assembly of cylindrical nanodomains in low molecular weight PS-b-PMMA thin films

    International Nuclear Information System (INIS)

    Seguini, Gabriele; Giammaria, Tommaso J; Lupi, Federico Ferrarese; Perego, Michele; Sparnacci, Katia; Antonioli, Diego; Gianotti, Valentina; Laus, Michele; Vita, Francesco; Placentino, Immacolata F; Francescangeli, Oriano; Hilhorst, Jan; Ferrero, Claudio

    2014-01-01

    The phase behaviour in thin films of an asymmetric polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymer with a molecular weight of 39 kg mol −1 was assessed at a wide range of temperatures and times. Cylindrical PMMA structures featuring a diameter close to 10 nm and perpendicularly oriented with respect to the substrate were obtained at 180 ° C in relatively short annealing times (t ≤ 30 min) by means of a simple thermal treatment performed in a standard rapid thermal processing machine. (paper)

  20. Surface and sub-surface thermal oxidation of ruthenium thin films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    For next generation Extreme UV photolithography, multilayer coatings may require protective capping layers against surface contamination. Ruthenium, as a low-oxidation metal, is often used as a reference material. The oxidation behaviour of Ru thin films has been studied using X-ray reflectometry

  1. Thermal stability, microstructure and mechanical properties of Ti1-xZrxN thin films

    International Nuclear Information System (INIS)

    Hoerling, A.; Sjoelen, J.; Willmann, H.; Larsson, T.; Oden, M.; Hultman, L.

    2008-01-01

    Single-phase [NaCl]-structure Ti 1-x Zr x N thin films (0 1-x Zr x N films is proposed to be solid-solution hardening through local lattice strain fields originating from difference in atomic radius of Ti and Zr. The material system is thus promising for cutting tool applications

  2. Thermal expansion coefficient and thermomechanical properties of SiN(x) thin films prepared by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Tien, Chuen-Lin; Lin, Tsai-Wei

    2012-10-20

    We present a new method based on fast Fourier transform (FFT) for evaluating the thermal expansion coefficient and thermomechanical properties of thin films. The silicon nitride thin films deposited on Corning glass and Si wafers were prepared by plasma-enhanced chemical vapor deposition in this study. The anisotropic residual stress and thermomechanical properties of silicon nitride thin films were studied. Residual stresses in thin films were measured by a modified Michelson interferometer associated with the FFT method under different heating temperatures. We found that the average residual-stress value increases when the temperature increases from room temperature to 100°C. Increased substrate temperature causes the residual stress in SiN(x) film deposited on Si wafers to be more compressive, but the residual stress in SiN(x) film on Corning glass becomes more tensile. The residual-stress versus substrate-temperature relation is a linear correlation after heating. A double substrate technique is used to determine the thermal expansion coefficients of the thin films. The experimental results show that the thermal expansion coefficient of the silicon nitride thin films is 3.27×10(-6)°C(-1). The biaxial modulus is 1125 GPa for SiN(x) film.

  3. Optoelectronic properties of cadmium sulfide thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Ali, N.; Iqbal, M.A.; Hussain, S.T.; Waris, M.; Munair, S.A.

    2011-01-01

    The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150 deg. C- 300 deg. C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300 nm to 1100 nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm/sup 2/V/sup -1/S/sup -1/ respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the N-type nature of the film. (author)

  4. Growth Structural and Optical Properties of the Thermally Evaporated Tin Diselenide (SnSe2) Thin Films

    OpenAIRE

    R. Sachdeva1,; M. Sharma1,; A. Devi1,; U. Parihar1,; N. Kumar1,; N. Padha1,; C.J. Panchal

    2011-01-01

    Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnSe2 thin films were grown using direct thermal evaporation of SnSe2 compound material on chemically cleaned glass substrate, which were held at different substrate temperatures. X-ray diffraction an...

  5. Phase formation, thermal stability and magnetic moment of cobalt nitride thin films

    Directory of Open Access Journals (Sweden)

    Rachana Gupta

    2015-09-01

    Full Text Available Cobalt nitride (Co-N thin films prepared using a reactive magnetron sputtering process are studied in this work. During the thin film deposition process, the relative nitrogen gas flow (RN2 was varied. As RN2 increases, Co(N, Co4N, Co3N and CoN phases are formed. An incremental increase in RN2, after emergence of Co4N phase at RN2 = 10%, results in a linear increase of the lattice constant (a of Co4N. For RN2 = 30%, a maximizes and becomes comparable to its theoretical value. An expansion in a of Co4N, results in an enhancement of the magnetic moment, to the extent that it becomes even larger than pure Co. Such larger than pure metal magnetic moment for tetra-metal nitrides (M4N have been theoretically predicted. Incorporation of N atoms in M4N configuration results in an expansion of a (relative to pure metal and enhances the itinerary of conduction band electrons leading to larger than pure metal magnetic moment for M4N compounds. Though a higher (than pure Fe magnetic moment for Fe4N thin films has been evidenced experimentally, higher (than pure Co magnetic moment is evidenced in this work.

  6. High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library

    Science.gov (United States)

    d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

    2017-07-01

    A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library FexSiyGe100-x-y (20 deposited by wedge-type multi-layer method on a 100 mm diameter sapphire wafer offering more than 300 analysis areas of different ternary alloy compositions.

  7. Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

    International Nuclear Information System (INIS)

    Kang, Jiyeon; Lee, Su Jeong; Myoung, Jae-Min; Kim, Chul-Hong; Chae, Gee Sung; Jun, Myungchul; Hwang, Yong Kee; Lee, Woong

    2012-01-01

    In order to investigate the possible reason for the improved device performances of amorphous In–Ga–Zn-O (a-IGZO) thin film transistors after thermal annealing, changes in the elemental concentrations in the a-IGZO channel regions and related device performances due to thermal annealing were observed. It was found that thermal annealing introduces a substantial level of oxygen deficiencies in the channel layer accompanying significantly enhanced device performances. The improved device performances are attributed to the oxygen deficiency which is believed to be averaged over the entire structure to function as shallow donors increasing the carrier concentrations. Such a deduction was supported by the changes in the absorption spectra of the a-IGZO films with various thermal histories. (paper)

  8. Effect of dopants and thermal treatment on properties of Ga-Al-ZnO thin films fabricated by hetero targets sputtering system

    International Nuclear Information System (INIS)

    Hong, JeongSoo; Matsushita, Nobuhiro; Kim, KyungHwan

    2013-01-01

    In this study, we fabricated Ga and Al doped ZnO (Ga-Al-ZnO; GAZO) thin films by using the facing targets sputtering system under various conditions such as input current and thermal treatment temperature. The properties of the as-deposited GAZO thin films were examined by four-point, UV/Vis spectrometry, X-ray diffraction, atomic force microscopy and field-emission scanning electron microscopy. The result showed that the lowest sheet resistance of the films was 59.3 ohm/sq and transmittance was about 85%. After thermal treatment, the properties of GAZO thin films were improved. The lowest sheet resistance (47.3 ohm/sq) of the GAZO thin films were obtained at thermal treatment temperature of 300 °C, considered to be the result of continuous substitutions by dopants and improved crystallinity by the thermal treatment. - Highlights: ► Ga and Al doped ZnO thin films were prepared by hetero targets sputtering system. ► Free electrons were increased due to the continuous substitutions of Ga and Al. ► Crystallinity was improved by recombination of particles with increasing of temperature

  9. Variation of microstructural and optical properties in SILAR grown ZnO thin films by thermal treatment.

    Science.gov (United States)

    Valanarasu, S; Dhanasekaran, V; Chandramohan, R; Kulandaisamy, I; Sakthivelu, A; Mahalingam, T

    2013-08-01

    The influence of thermal treatment on the structural and morphological properties of the ZnO films deposited by double dip Successive ionic layer by adsorption reaction is presented. The effect of annealing temperature and time in air ambient is presented in detail. The deposited films were annealed from 200 to 400 degrees C in air and the structural properties were determined as a function of annealing temperature by XRD. The studies revealed that films were exhibiting preferential orientation along (002) plane. The other structural parameters like the crystallite size (D), micro strain (epsilon), dislocation density (delta) and stacking fault (alpha) of as-deposited and annealed ZnO films were evaluated and reported. The optical properties were also studied and the band gap of the ZnO thins films varied from 3.27 to 3.04 eV with the annealing temperature. SEM studies revealed that the hexagonal shaped grains with uniformly distributed morphology in annealed ZnO thin films. It has been envisaged using EDX analysis that the near stoichiometric composition of the film can be attained by thermal treatment during which microstructural changes do occur.

  10. Growth of manganese sulfide (α-MnS) thin films by thermal vacuum evaporation: Structural, morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia); Segura, Alfredo [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Maghraoui-Meherzi, Hager [Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia)

    2016-09-15

    MnS thin films have been successfully prepared by thermal evaporation method at different substrate temperatures using different masses of MnS powder. The prepared films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and UV–visible spectrophotometry. The XRD measurements show that the films crystallized in the pure α-MnS for substrate temperatures above 100 °C. The optical bandgap of thin films is found to be in the range of 3.2–3.3 eV. A factorial experimental design was used for determining the influence of the two experimental parameters on the films growth. - Highlights: • α-MnS films were deposited on glass and quartz substrates using the thermal evaporation technique. • The effect of substrate temperature on the properties of the MnS films has been studied. • The factorial design was used to determine the most influence parameters.

  11. Simultaneous measurement of thermal conductivity and heat capacity of bulk and thin film materials using frequency-dependent transient thermoreflectance method.

    Science.gov (United States)

    Liu, Jun; Zhu, Jie; Tian, Miao; Gu, Xiaokun; Schmidt, Aaron; Yang, Ronggui

    2013-03-01

    The increasing interest in the extraordinary thermal properties of nanostructures has led to the development of various measurement techniques. Transient thermoreflectance method has emerged as a reliable measurement technique for thermal conductivity of thin films. In this method, the determination of thermal conductivity usually relies much on the accuracy of heat capacity input. For new nanoscale materials with unknown or less-understood thermal properties, it is either questionable to assume bulk heat capacity for nanostructures or difficult to obtain the bulk form of those materials for a conventional heat capacity measurement. In this paper, we describe a technique for simultaneous measurement of thermal conductivity κ and volumetric heat capacity C of both bulk and thin film materials using frequency-dependent time-domain thermoreflectance (TDTR) signals. The heat transfer model is analyzed first to find how different combinations of κ and C determine the frequency-dependent TDTR signals. Simultaneous measurement of thermal conductivity and volumetric heat capacity is then demonstrated with bulk Si and thin film SiO2 samples using frequency-dependent TDTR measurement. This method is further testified by measuring both thermal conductivity and volumetric heat capacity of novel hybrid organic-inorganic thin films fabricated using the atomic∕molecular layer deposition. Simultaneous measurement of thermal conductivity and heat capacity can significantly shorten the development∕discovery cycle of novel materials.

  12. Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

  13. Fabrication of oxide-free graphene suspension and transparent thin films using amide solvent and thermal treatment

    International Nuclear Information System (INIS)

    Oh, Se Young; Kim, Sung Hwan; Chi, Yong Seung; Kang, Tae Jin

    2012-01-01

    Graphical abstract: New methodology for suspended graphene sheets of high-quality (oxide-free), high-yield (high concentration) using amide solvent exfoliation and thermal treatment at 800 °C. We confirmed that the van der Waals force between the graphene layers decreases as increasing thermal treatment temperatures as shown XRD data (b). Highlights: ► Propose of new methodology to prepare oxide-free graphene sheets suspension. ► The graphene suspension concentration is enhanced by thermal treatment. ► Decrease of van der Waals force between the graphene layers by high temperature and pressure. ► This method has the potential as technology for mass production. ► It could be applied in transparent and flexible electronic devices. - Abstract: High quality graphene sheets were produced from graphite by liquid phase exfoliation using N-methyl-2-pyrrolidone (NMP) and a subsequent thermal treatment to enhance the exfoliation. The exfoliation was enhanced by treatment with organic solvent and high thermal expansion producing high yields of the high-quality and defect-free graphene sheets. The graphene was successfully deposited on a flexible and transparent polymer film using the vacuum filtration method. SEM images of thin films of graphene treated at 800 °C showed uniform structure with no defects commonly found in films made of graphene produced by other techniques. Thin films of graphene prepared at higher temperatures showed superior transmittance and conductivity. The sheet-resistance of the graphene film treated at 800 °C was 2.8 × 10 3 kΩ/□ with 80% transmittance.

  14. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V. [School of Materials Science and Engineering, University of New South Wales, Sydney 2052 (Australia); Ihlefeld, J. [Electronic, Optical, and Nanomaterials Department, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2014-10-28

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO{sub 2}/(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  15. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    International Nuclear Information System (INIS)

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V.; Ihlefeld, J.

    2014-01-01

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO 2 /(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  16. Optical and structural properties of CuSbS2 thin films grown by thermal evaporation method

    International Nuclear Information System (INIS)

    Rabhi, A.; Kanzari, M.; Rezig, B.

    2009-01-01

    Structural, optical and electrical properties of CuSbS 2 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuSbS 2 thin films were carried out at substrate temperatures in the temperature range 100-200 deg. C . The structure and composition were characterized by XRD, SEM and EDX. X-ray diffraction revealed that the films are (111) oriented upon substrate temperature 170 deg. C and amorphous for the substrate temperatures below 170 deg. C . No secondary phases are observed for all the films. The optical absorption coefficients and band gaps of the films were estimated by optical transmission and reflection measurements at room temperature. Strong absorption coefficients in the range 10 5 -10 6 cm -1 at 500 nm were found. The direct gaps Eg lie between 0.91-1.89 eV range. It is observed that there is a decrease in optical band gap Eg with increasing the substrate temperature. Resistivity of 0.03-0.96 Ω cm, in dependence on substrate temperature was characterized. The all unheated films exhibit p-type conductivity. The characteristics reported here also offer perspective for CuSbS 2 as an absorber material in solar cells applications

  17. Effect of substrate temperature on the optical parameters of thermally evaporated Ge-Se-Te thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Pankaj, E-mail: pks_phy@yahoo.co.i [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India); Katyal, S.C. [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India)

    2009-05-01

    Thin films of Ge{sub 10}Se{sub 90-x}Te{sub x} (x = 0, 10, 20, 30, 40, 50) glassy alloys were deposited at three substrate temperatures (303 K, 363 K and 423 K) using conventional thermal evaporation technique at base pressure of {approx} 10{sup -4} Pa. X-ray diffraction results show that films deposited at 303 K are of amorphous nature while films deposited at 363 K and 423 K are of polycrystalline nature. The optical parameters, refractive index and optical gap have been derived from the transmission spectra (using UV-Vis-NIR spectrophotometer) of the thin films in the spectral region 400-1500 nm. This has been observed that refractive index values remain almost constant while the optical gap is found to decrease considerably with the increase of substrate temperature. The decrease in optical gap is explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase of substrate temperature. The optical gap has also been observed to decrease with the increase of Te content.

  18. Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass

    Energy Technology Data Exchange (ETDEWEB)

    Rau, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)], E-mail: bjoern.rau@helmholtz-berlin.de; Weber, T.; Gorka, B.; Dogan, P.; Fenske, F.; Lee, K.Y.; Gall, S.; Rech, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)

    2009-03-15

    In this report, we discuss the influence of rapid thermal annealing (RTA) on the performance of polycrystalline Si (poly-Si) thin-film solar cells on glass where the poly-Si layers are differently prepared. The first part presents a comprehensive study of RTA treatments on poly-Si thin-films made by solid phase crystallization (SPC) (standard material of CSG Solar AG, Thalheim). By varying both plateau temperature (up to 1050 deg. C) and duration (up to 1000 s) of the annealing profile, we determined the parameters for a maximum open-circuit voltage (V{sub OC}). In addition, we applied our standard plasma hydrogenation treatment in order to passivate the remaining intra-grain defects and grain boundaries by atomic hydrogen resulting in a further increase of V{sub OC}. We found, that the preceding RTA treatment increases the effect of hydrogenation already at comparable low RTA temperatures. The effect on hydrogenation increases significantly with RTA temperature. In a second step we investigated the effect of the RTA and hydrogenation on large-grained poly-Si films based on the epitaxial thickening of poly-Si seed layers.

  19. SERS activity of Ag decorated nanodiamond and nano-β-SiC, diamond-like-carbon and thermally annealed diamond thin film surfaces.

    Science.gov (United States)

    Kuntumalla, Mohan Kumar; Srikanth, Vadali Venkata Satya Siva; Ravulapalli, Satyavathi; Gangadharini, Upender; Ojha, Harish; Desai, Narayana Rao; Bansal, Chandrahas

    2015-09-07

    In the recent past surface enhanced Raman scattering (SERS) based bio-sensing has gained prominence owing to the simplicity and efficiency of the SERS technique. Dedicated and continuous research efforts have been made to develop SERS substrates that are not only stable, durable and reproducible but also facilitate real-time bio-sensing. In this context diamond, β-SiC and diamond-like-carbon (DLC) and other related thin films have been promoted as excellent candidates for bio-technological applications including real time bio-sensing. In this work, SERS activities of nanodiamond, nano-β-SiC, DLC, thermally annealed diamond thin film surfaces were examined. DLC and thermally annealed diamond thin films were found to show SERS activity without any metal nanostructures on their surfaces. The observed SERS activities of the considered surfaces are explained in terms of the electromagnetic enhancement mechanism and charge transfer resonance process.

  20. Thermoelectric properties of V{sub 2}O{sub 5} thin films deposited by thermal evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Santos, R.; Loureiro, J., E-mail: joa.loureiro@gmail.com; Nogueira, A.; Elangovan, E.; Pinto, J.V.; Veiga, J.P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I., E-mail: imf@fct.unl.pt

    2013-10-01

    This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V{sub 2}O{sub 5}) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V{sub 2}O{sub 5} phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 μV/K and electrical conductivity of 5.5 (Ω m){sup −1}. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

  1. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. GALVANIC MAGNETIC PROPERTIES OF BISMUTH THIN FILMS DOPED WITH TELLURIUM MADE BY THERMAL VACUUM EVAPORATION

    Directory of Open Access Journals (Sweden)

    V. A. Komarov

    2013-01-01

    Full Text Available The influence of n-type impurity of tellurium (concentration range from 0.005 atomic % Te to 0.15 atomic % Te on galvanic magnetic properties (resistivity, magnetic resistance and Hall constant of Bi thin films with various thicknesses was studied. The properties were measured in temperature range from 77 to 300 K. It was established that the classical size effect in the films is significant and decreases with higher concentration of Te impurity. The analysis of experimental results was carried out in approximation of the law of Jones-Schoenberg dispersion for Bi films doped with tellurium. Calculation of concentration and mobility of charge carriers in the studied films was made.

  3. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

    Energy Technology Data Exchange (ETDEWEB)

    Smith, L.; Murphy, J.W. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Kim, J. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Rozhdestvenskyy, S.; Mejia, I. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Park, H. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Allee, D.R. [Flexible Display Center, Arizona State University, Phoenix, AZ 85284 (United States); Quevedo-Lopez, M. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Gnade, B., E-mail: beg031000@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States)

    2016-12-01

    Solid-state neutron detectors offer an alternative to {sup 3}He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10{sup −6} gamma-ray efficiency.

  4. Characterization of CuIn1-xAlxS2 thin films prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Smaili, F.; Kanzari, M.; Rezig, B.

    2008-01-01

    Ingots containing single crystals of the quaternary alloys CuIn 1-x Al x S 2 (CIAS) were grown by a horizontal Bridgman method for compositions with x = 0, 0.2 and x = 0.4. (CIAS) thin films were prepared by thermal evaporation technique on to glass substrates. Structural and optical properties of the films were studied in function of the Al content. Band gap, and absorption coefficients were determined from the analysis of the optical spectra (transmittance and reflectance as a function of wavelength) recorded by a spectrophotometer. The samples have direct bandgap energies of 1.95 eV (x = 0), 2.06 eV (x = 0,2) and 2.1 eV (x = 0,4). These optical results were correlated with the structural analysis by X-Ray diffraction

  5. Rutile TiO{sub 2} active-channel thin-film transistor using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung-Jin; Heo, Kwan-Jun; Yoo, Su-Chang; Choi, Seong-Gon [Chungbuk National University, Cheongju (Korea, Republic of); Chang, Seung-Wook [Samsung Display, Co., Ltd., Suwon (Korea, Republic of)

    2014-10-15

    TiO{sub 2} active-channel thin-film transistors (TFTs), in which the bottom-gate top-contact architecture was prepared with atomic layer deposition grown TiO{sub 2} as the semiconducting layer, were fabricated and then investigated based on key process parameters, such as the rapid thermal annealing (RTA) temperature. Structural analyses suggested that TiO{sub 2} films annealed at temperatures above 500 .deg. C changed from an amorphous to a rutile phase. The TFT with a TiO{sub 2} semiconductor annealed at 600 .deg. C exhibited strongly-saturated output characteristics, a much higher on/off current ratio of 4.3 x 10{sup 5}, and an electron mobility of 0.014 cm{sup 2}/Vs. Moreover, the potential for manipulating TiO{sub 2}-based TFTs with RTA methodology was demonstrated through the realization of a simple resistive-load inverter.

  6. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...

  7. Research of electrosurgical unit with novel antiadhesion composite thin film for tumor ablation: Microstructural characteristics, thermal conduction properties, and biological behaviors.

    Science.gov (United States)

    Shen, Yun-Dun; Lin, Li-Hsiang; Chiang, Hsi-Jen; Ou, Keng-Liang; Cheng, Han-Yi

    2016-01-01

    The objective of this study was to use surface functionalization to evaluate the antiadhesion property and thermal injury effects on the liver when using a novel electrosurgical unit with nanostructured-doped diamond-like carbon (DLC-Cu) thin films for tumor ablations. The physical and chemical properties of DLC-Cu thin films were characterized by contact angle goniometer, scanning electron microscope, and transmission electron microscope. Three-dimensional (3D) hepatic models were reconstructed using magnetic resonance imaging to simulate a clinical electrosurgical operation. The results indicated a significant increase of the contact angle on the nanostructured DLC-Cu thin films, and the antiadhesion properties were also observed in an animal model. Furthermore, the surgical temperature in the DLC-Cu electrosurgical unit was found to be significantly lower than the untreated unit when analyzed using 3D models and thermal images. In addition, DLC-Cu electrodes caused a relatively small injury area and lateral thermal effect. The results indicated that the nanostructured DLC-Cu thin film coating reduced excessive thermal injury and tissue adherence effect in the liver. © 2015 Wiley Periodicals, Inc.

  8. Comparison of Ultrasonic Welding and Thermal Bonding for the Integration of Thin Film Metal Electrodes in Injection Molded Polymeric Lab-on-Chip Systems for Electrochemistry

    DEFF Research Database (Denmark)

    Matteucci, Marco; Heiskanen, Arto; Zor, Kinga

    2016-01-01

    We compare ultrasonic welding (UW) and thermal bonding (TB) for the integration of embedded thin-film gold electrodes for electrochemical applications in injection molded (IM) microfluidic chips. The UW bonded chips showed a significantly superior electrochemical performance compared to the ones ...

  9. Microstructural, thermal and mechanical behavior of co-sputtered binary Zr–Cu thin film metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Steyer, P., E-mail: philippe.steyer@insa-lyon.fr [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Joly-Pottuz, L. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Billard, A. [LERMPS-UTBM, Site de Montbéliard, 90010 Belfort Cédex (France); Qiao, J.; Cardinal, S. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Sanchette, F. [LASMIS-UTT, UMR CNRS 6279, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Pelletier, J.M.; Esnouf, C. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2014-06-30

    Bulk metallic glasses have attracted considerable attention over the last decades for their outstanding mechanical features (high strength, super-elasticity) and physico-chemical properties (corrosion resistance). Recently, some attempts to assign such original behavior from bulk materials to modified surfaces have been reported in the literature based on multicomponent alloys. In this paper we focused on the opportunity to form a metallic glass coating from the binary Zr–Cu system using a magnetron co-sputtering physical vapor deposition process. The composition of the films can be easily controlled by the relative intensities applied to both pure targets, which made possible the study of the whole Zr–Cu system (from 13.4 to 85.0 at.% Cu). The chemical composition of the films was obtained by energy dispersive X-ray spectroscopy, and their microstructure was characterized by scanning and transmission electron microscopy. The thermal stability of the films was deduced from an in situ X-ray diffraction analysis (from room temperature up to 600 °C) and correlated with the results of the differential scanning calorimetry technique. Their mechanical properties were determined by nanoindentation experiments. - Highlights: • We reported deposition of Zr-Cu thin film metallic glasses by co-sputtering • Films were XRD-amorphous in a wide composition range (33.3 – 85.0 at.% Cu) • Microstructure investigation revealed some local nanodomains • We examined the thermal stability by means of in situ X-ray diffraction • Nanoindentation was used to obtained mechanical properties of thin films.

  10. Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

    2017-04-01

    Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

  11. Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

    Science.gov (United States)

    Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

    2018-02-01

    In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

  12. Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing : Solvent and Thickness Effects

    NARCIS (Netherlands)

    Yang, Qiuyan; Loos, Katja

    2017-01-01

    Solvent vapor annealing of block copolymer (BCP) thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for

  13. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Dudney, Nancy J.

    2008-01-01

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  14. Environmental influences on the performance of thin film solar cells

    International Nuclear Information System (INIS)

    Gottschalg, Ralph

    2001-01-01

    The response of thin film photovoltaic devices to changes in the environment is not well understood. There are a large number of conflicting reports, reflecting largely the superimposed nature of the environmental effects. A separation of the effects is not often attempted mainly because of the lack of appropriate spectral data. An experimental system has been designed and operated to facilitate the separation of the environmental effects, including spectral effects. This involves measurements in a controlled laboratory environment as well as outdoor monitoring. Furthermore, a number of analysis tools have been developed and tested for their suitability. In order to develop a system model, the applicability of parametric models for thin film devices is probed. The thermal variation of the underlying physical parameters is investigated and problems of describing thin film devices with parametric models are discussed. It is shown that the magnitude of the spectral effects for thin film devices is potentially much more significant than for conventional crystalline silicon devices. This analysis is centred on the primary spectral effect, i.e. it is conducted purely on the basis of available light and does not consider any absorption profiles or device structures. It is also shown that there is a strong daily and seasonal variation in the fraction of the useful light for devices employing a larger band gap. Environmental effects are observed directly from outdoor measurements. It is apparent that many of the reported idiosyncrasies occurring during the operation of thin film devices can be explained simply by including spectral effects. It is possible to show the secondary spectral effect for multi-junction devices, i.e. an effect that depends on the composition of the solar irradiance and not purely on the magnitude of spectrally useful irradiance. This effect impacts mainly on the short circuit current and to some extent on the fill factor. Finally, the findings of

  15. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  16. The W alloying effect on thermal stability and hardening of nanostructured Cu–W alloyed thin films

    Science.gov (United States)

    Zhao, J. T.; Zhang, J. Y.; Hou, Z. Q.; Wu, K.; Feng, X. B.; Liu, G.; Sun, J.

    2018-05-01

    In order to achieve desired mechanical properties of alloys by manipulating grain boundaries (GBs) via solute decoration, it is of great significance to understand the underlying mechanisms of microstructural evolution and plastic deformation. In this work, nanocrystalline (NC) Cu–W alloyed films with W concentrations spanning from 0 to 40 at% were prepared by using magnetron sputtering. Thermal stability (within the temperature range of 200 °C–600 °C) and hardness of the films were investigated by using the x-ray diffraction, transmission electron microscope (TEM) and nanoindentation, respectively. The NC pure Cu film exhibited substantial grain growth upon all annealing temperatures. The Cu–W alloyed films, however, displayed distinct microstructural evolution that depended not only on the W concentration but also on the annealing temperature. At a low temperature of 200 °C, all the Cu–W alloyed films were highly stable, with unconspicuous change in grain sizes. At high temperatures of 400 °C and 600 °C, the microstructural evolution was greatly controlled by the W concentrations. The Cu–W films with low W concentration manifested abnormal grain growth (AGG), while the ones with high W concentrations showed phase separation. TEM observations unveiled that the AGG in the Cu–W alloyed thin films was rationalized by GB migration. Nanoindentation results showed that, although the hardness of both the as-deposited and annealed Cu–W alloyed thin films monotonically increased with W concentrations, a transition from annealing hardening to annealing softening was interestingly observed at the critical W addition of ∼25 at%. It was further revealed that an enhanced GB segregation associated with detwinning was responsible for the annealing hardening, while a reduced solid solution hardening for the annealing softening.

  17. Analysis of mobile ionic impurities in polyvinylalcohol thin films by thermal discharge current and dielectric impedance spectroscopy

    Directory of Open Access Journals (Sweden)

    M. Egginger

    2012-12-01

    Full Text Available Polyvinylalcohol (PVA is a water soluble polymer frequently applied in the field of organic electronics for insulating thin film layers. By-products of PVA synthesis are sodium acetate ions which contaminate the polymer material and can impinge on the electronic performance when applied as interlayer dielectrics in thin film transistors. Uncontrollable voltage instabilities and unwanted hysteresis effects are regularly reported with PVA devices. An understanding of these effects require knowledge about the electronic dynamics of the ionic impurities and their influence on the dielectric properties of PVA. Respective data, which are largely unknown, are being presented in this work. Experimental investigations were performed from room temperature to 125°C on drop-cast PVA films of three different quality grades. Data from thermal discharge current (TDC measurements, polarization experiments, and dielectric impedance spectroscopy concurrently show evidence of mobile ionic carriers. Results from TDC measurements indicate the existence of an intrinsic, build-in electric field of pristine PVA films. The field is caused by asymmetric ionic double layer formation at the two different film-interfaces (substrate/PVA and PVA/air. The mobile ions cause strong electrode polarization effects which dominate dielectric impedance spectra. From a quantitative electrode polarization analysis of isothermal impedance spectra temperature dependent values for the concentration, the mobility and conductivity together with characteristic relaxation times of the mobile carriers are given. Also shown are temperature dependent results for the dc-permittivity and the electronic resistivity. The obtained results demonstrate the feasibility to partly remove contaminants from a PVA solution by dialysis cleaning. Such a cleaning procedure reduces the values of ion concentration, conductivity and relaxation frequency.

  18. Metamorphosis of strain/stress on optical band gap energy of ZAO thin films via manipulation of thermal annealing process

    International Nuclear Information System (INIS)

    Malek, M.F.; Mamat, M.H.; Musa, M.Z.; Soga, T.; Rahman, S.A.; Alrokayan, Salman A.H.; Khan, Haseeb A.; Rusop, M.

    2015-01-01

    We report on the growth of Al-doped ZnO (ZAO) thin films prepared by the sol–gel technique associated with dip-coating onto Corning 7740 glass substrates. The influence of varying thermal annealing (T a ) temperature on crystallisation behaviour, optical and electrical properties of ZAO films has been systematically investigated. All films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction 〈0 0 2〉. The metamorphosis of strain/stress effects in ZAO thin films has been investigated using X-ray diffraction. The as growth films have a large compressive stress of 0.55 GPa, which relaxed to 0.25 GPa as the T a was increased to 500 °C. Optical parameters such as optical transmittance, absorption coefficient, refractive index and optical band gap energy have been studied and discussed with respect to T a . All films exhibit a transmittance above 80–90% along the visible–NIR range up to 1500 nm and a sharp absorption onset below 400 nm corresponding to the fundamental absorption edge of ZnO. Experimental results show that the tensile stress in the films reveals an incline pattern with the optical band gap energy, while the compressive stress shows opposite relation. - Highlights: • Minimum stress of highly c-axis oriented ZAO was grown at suitable T a temperature. • The ZAO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZAO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on T a temperature

  19. Metamorphosis of strain/stress on optical band gap energy of ZAO thin films via manipulation of thermal annealing process

    Energy Technology Data Exchange (ETDEWEB)

    Malek, M.F., E-mail: firz_solarzelle@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia); Mamat, M.H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Musa, M.Z. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM) Pulau Pinang, Jalan Permatang Pauh, 13500 Permatang Pauh, Pulau Pinang (Malaysia); Soga, T. [Department of Frontier Materials, Nagoya Institute of Technology (NITech), Nagoya 466-8555 (Japan); Rahman, S.A. [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, Universiti Malaya (UM), 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A.H.; Khan, Haseeb A. [Department of Biochemistry, College of Science, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2015-04-15

    We report on the growth of Al-doped ZnO (ZAO) thin films prepared by the sol–gel technique associated with dip-coating onto Corning 7740 glass substrates. The influence of varying thermal annealing (T{sub a}) temperature on crystallisation behaviour, optical and electrical properties of ZAO films has been systematically investigated. All films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction 〈0 0 2〉. The metamorphosis of strain/stress effects in ZAO thin films has been investigated using X-ray diffraction. The as growth films have a large compressive stress of 0.55 GPa, which relaxed to 0.25 GPa as the T{sub a} was increased to 500 °C. Optical parameters such as optical transmittance, absorption coefficient, refractive index and optical band gap energy have been studied and discussed with respect to T{sub a}. All films exhibit a transmittance above 80–90% along the visible–NIR range up to 1500 nm and a sharp absorption onset below 400 nm corresponding to the fundamental absorption edge of ZnO. Experimental results show that the tensile stress in the films reveals an incline pattern with the optical band gap energy, while the compressive stress shows opposite relation. - Highlights: • Minimum stress of highly c-axis oriented ZAO was grown at suitable T{sub a} temperature. • The ZAO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZAO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on T{sub a} temperature.

  20. The W alloying effect on thermal stability and hardening of nanostructured Cu-W alloyed thin films.

    Science.gov (United States)

    Zhao, J T; Zhang, J Y; Hou, Z Q; Wu, K; Feng, X B; Liu, G; Sun, J

    2018-05-11

    In order to achieve desired mechanical properties of alloys by manipulating grain boundaries (GBs) via solute decoration, it is of great significance to understand the underlying mechanisms of microstructural evolution and plastic deformation. In this work, nanocrystalline (NC) Cu-W alloyed films with W concentrations spanning from 0 to 40 at% were prepared by using magnetron sputtering. Thermal stability (within the temperature range of 200 °C-600 °C) and hardness of the films were investigated by using the x-ray diffraction, transmission electron microscope (TEM) and nanoindentation, respectively. The NC pure Cu film exhibited substantial grain growth upon all annealing temperatures. The Cu-W alloyed films, however, displayed distinct microstructural evolution that depended not only on the W concentration but also on the annealing temperature. At a low temperature of 200 °C, all the Cu-W alloyed films were highly stable, with unconspicuous change in grain sizes. At high temperatures of 400 °C and 600 °C, the microstructural evolution was greatly controlled by the W concentrations. The Cu-W films with low W concentration manifested abnormal grain growth (AGG), while the ones with high W concentrations showed phase separation. TEM observations unveiled that the AGG in the Cu-W alloyed thin films was rationalized by GB migration. Nanoindentation results showed that, although the hardness of both the as-deposited and annealed Cu-W alloyed thin films monotonically increased with W concentrations, a transition from annealing hardening to annealing softening was interestingly observed at the critical W addition of ∼25 at%. It was further revealed that an enhanced GB segregation associated with detwinning was responsible for the annealing hardening, while a reduced solid solution hardening for the annealing softening.

  1. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Directory of Open Access Journals (Sweden)

    Joong-Won Shin

    2017-07-01

    Full Text Available In this paper, we investigate a low thermal budget post-deposition-annealing (PDA process for amorphous In-Ga-ZnO (a-IGZO oxide semiconductor thin-film-transistors (TFTs. To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA and rapid thermal annealing (RTA methods were applied, and the results were compared with those of the conventional annealing (CTA method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C and short annealing time (2 min because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  2. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Science.gov (United States)

    Shin, Joong-Won; Cho, Won-Ju

    2017-07-01

    In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  3. The influence of nitrogen and oxygen additions on the thermal characteristics of aluminium-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Macedo, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Couto, F.M. [Physics Sciences Laboratory, Norte Fluminense State University, 28013-602 Campos–RJ (Brazil); Rodrigues, M.S.; Lopes, C. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); Pedrosa, P. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Universidade do Porto, Faculdade de Engenharia, Departamento de Engenharia Metalúrgica e de Materiais, Rua Dr. Roberto Frias, s/n, 4200-465 Porto (Portugal); Polcar, T. [Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Engineering Materials & nCATS, FEE, University of Southampton, Highfield Campus, SO17 1BJ, Southampton (United Kingdom); Marques, L.; Vaz, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-08-01

    The ternary aluminium oxynitride (AlN{sub x}O{sub y}) system offers the possibility to obtain a wide range of properties by tailoring the ratio between pure Al, AlN{sub x} and AlO{sub y} and therefore opening a significant number of possible applications. In this work the thermal behaviour of AlN{sub x}O{sub y} thin films was analysed by modulated infrared radiometry (MIRR), taking as reference the binary AlO{sub y} and AlN{sub x} systems. MIRR is a non-contact and non-destructive thermal wave measurement technique based on the excitation, propagation and detection of temperature oscillations of very small amplitudes. The intended change of the partial pressure of the reactive gas (N{sub 2} and/or O{sub 2}) influenced the target condition and hence the deposition characteristics which, altogether, affected the composition and microstructure of the films. Based on the MIRR measurements and their qualitative and quantitative interpretation, some correlations between the thermal transport properties of the films and their chemical/physical properties have been found. Furthermore, the potential of such technique applied in this oxynitride system, which present a wide range of different physical responses, is also discussed. The experimental results obtained are consistent with those reported in previous works and show a high potential to fulfil the demands needed for the possible applications of the systems studied. They are clearly indicative of an adequate thermal response if this particular thin film system is aimed to be applied in small sensor devices or in electrodes for biosignal acquisition, such as those for electroencephalography or electromyography as it is the case of the main research area that is being developed in the group. - Highlights: • AlN{sub x}, AlO{sub y} and AlN{sub x}O{sub y} films were deposited by magnetron sputtering. • Discharge characteristics were compared between systems. • Different x and y coefficients were obtained.

  4. Mechanics of Thin Films

    Science.gov (United States)

    1992-02-06

    and the second geometry was that of squat cylinders (diameter 6.4 mm, height 6.4 mm). These two geometries were tested in thermal shock tests, and a...milder [13]. More recently, Lau, Rahman and stressa nce ntrati, tha n films of lmalla rat ve spc Delale calculated the free edge singularity for stress...thickness of 3 mm); the second geometry was that As an example of the shielding effect of thin films, we of squat cylinders (diameter 6.4 mm, height 6.4

  5. A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2

    International Nuclear Information System (INIS)

    Calixto-Rodriguez, M.; Martinez, H.; Pena, Y.; Flores, O.; Esparza-Ponce, H.E.; Sanchez-Juarez, A.; Campos-Alvarez, J.; Reyes, P.

    2010-01-01

    As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb 2 S 3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E g ) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb 2 S 3 thin films decreased from 10 8 to 10 6 Ω-cm after plasma treatments.

  6. In{sub 6}Se{sub 7} thin films by heating thermally evaporated indium and chemical bath deposited selenium multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Ornelas, R.E.; Avellaneda, D. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Shaji, S. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico); Castillo, G.A.; Roy, T.K. Das [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico)

    2012-05-15

    Indium selenide (In{sub 6}Se{sub 7}) thin films were prepared via selenization of thermally evaporated indium thin films by dipping in sodium selenosulphate solution followed by annealing in nitrogen atmosphere. First, indium was thermally evaporated on glass substrate. Then, the indium coated glass substrates were dipped in a solution containing 80 ml 0.125 M sodium selenosulphate and 1.5 ml dilute acetic acid (25%) for 5 min. Glass/In-Se layers were annealed at 200-400 Degree-Sign C in nitrogen atmosphere (0.1 Torr) for 30 min. X-ray diffraction studies showed the formation of monoclinic In{sub 6}Se{sub 7}. Morphology of the thin films formed at different conditions was analyzed using Scanning electron microscopy. The elemental analysis was done using Energy dispersive X-ray detection. Electrical conductivity under dark and illumination conditions was evaluated. Optical band gap was computed using transmittance and reflectance spectra. The band gap value was in the range 1.8-2.6 eV corresponding to a direct allowed transition. We studied the effect of indium layer thickness and selenium deposition time on the structure, electrical and optical properties of In{sub 6}Se{sub 7} thin films.

  7. Thin Film Williamson Nanofluid Flow with Varying Viscosity and Thermal Conductivity on a Time-Dependent Stretching Sheet

    Directory of Open Access Journals (Sweden)

    Waris Khan

    2016-11-01

    Full Text Available This article describes the effect of thermal radiation on the thin film nanofluid flow of a Williamson fluid over an unsteady stretching surface with variable fluid properties. The basic governing equations of continuity, momentum, energy, and concentration are incorporated. The effect of thermal radiation and viscous dissipation terms are included in the energy equation. The energy and concentration fields are also coupled with the effect of Dufour and Soret. The transformations are used to reduce the unsteady equations of velocity, temperature and concentration in the set of nonlinear differential equations and these equations are tackled through the Homotopy Analysis Method (HAM. For the sake of comparison, numerical (ND-Solve Method solutions are also obtained. Special attention has been given to the variable fluid properties’ effects on the flow of a Williamson nanofluid. Finally, the effect of non-dimensional physical parameters like thermal conductivity, Schmidt number, Williamson parameter, Brinkman number, radiation parameter, and Prandtl number has been thoroughly demonstrated and discussed.

  8. Non-monotonic probability of thermal reversal in thin-film biaxial nanomagnets with small energy barriers

    Directory of Open Access Journals (Sweden)

    N. Kani

    2017-05-01

    Full Text Available The goal of this paper is to investigate the short time-scale, thermally-induced probability of magnetization reversal for an biaxial nanomagnet that is characterized with a biaxial magnetic anisotropy. For the first time, we clearly show that for a given energy barrier of the nanomagnet, the magnetization reversal probability of an biaxial nanomagnet exhibits a non-monotonic dependence on its saturation magnetization. Specifically, there are two reasons for this non-monotonic behavior in rectangular thin-film nanomagnets that have a large perpendicular magnetic anisotropy. First, a large perpendicular anisotropy lowers the precessional period of the magnetization making it more likely to precess across the x^=0 plane if the magnetization energy exceeds the energy barrier. Second, the thermal-field torque at a particular energy increases as the magnitude of the perpendicular anisotropy increases during the magnetization precession. This non-monotonic behavior is most noticeable when analyzing the magnetization reversals on time-scales up to several tens of ns. In light of the several proposals of spintronic devices that require data retention on time-scales up to 10’s of ns, understanding the probability of magnetization reversal on the short time-scales is important. As such, the results presented in this paper will be helpful in quantifying the reliability and noise sensitivity of spintronic devices in which thermal noise is inevitably present.

  9. Chemical states and optical properties of thermally evaporated Ge-Te and Ge-Sb-Te amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Singh, D.; Shandhu, S. [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India)

    2012-07-15

    Thin amorphous films of Ge{sub 22}Sb{sub 22}Te{sub 56} and Ge{sub 50}Te{sub 50} have been prepared from their respective polycrystalline bulk on glass substrates by thermal evaporation technique. The amorphous nature of the films was checked with X-ray diffraction studies. Amorphous-to-crystalline transition of the films has been induced by thermal annealing and the structural phases have been identified by X-ray diffraction. The phase transformation temperature of the films was evaluated by temperature dependent sheet resistance measurement. The chemical structure of the amorphous films has been investigated using X-ray photoelectron spectroscopy and the role of Sb in phase change Ge{sub 22}Sb{sub 22}Te{sub 56} film is discussed. Survey and core level (Ge 3d, Te 3d, Te 4d, Sb 3p, Sb 3d, O 1s, C 1s) band spectra has been recorded and analyzed. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-vis-NIR spectroscopy. The optical band gap, refractive index and extinction coefficient are also presented for thermally evaporated amorphous thin films.

  10. Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Kuan-Hsien; Chou, Wu-Ching, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw [Department of Electrophysics, National Chiao Tung University, Hsin-chu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Chen, Hua-Mao; Tai, Ya-Hsiang [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-chu 300, Taiwan (China); Tsai, Ming-Yen; Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan [Department of Electronics Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No.1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsin-Chu 30078, Taiwan (China)

    2014-10-21

    This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I{sub D}-V{sub G} and modulated peak/base pulse time I{sub D}-V{sub D} measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.

  11. Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

    International Nuclear Information System (INIS)

    Park, Ick-Joon; Jeong, Chan-Yong; Song, Sang-Hun; Kwon, Hyuck-In; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok

    2012-01-01

    In this work, we present the results concerning the use of amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments. (paper)

  12. Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

    International Nuclear Information System (INIS)

    Liu, Kuan-Hsien; Chou, Wu-Ching; Chang, Ting-Chang; Chen, Hua-Mao; Tai, Ya-Hsiang; Tsai, Ming-Yen; Hung, Pei-Hua; Chu, Ann-Kuo; Wu, Ming-Siou; Hung, Yi-Syuan; Hsieh, Tien-Yu; Yeh, Bo-Liang

    2014-01-01

    This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I D -V G and modulated peak/base pulse time I D -V D measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.

  13. Effect of thermal treatment on the CO and H2O sensing properties of MoO3 thin films

    International Nuclear Information System (INIS)

    Torres-Luengo, M; Martínez, H M; Torres, J; López-Carreño, L D

    2014-01-01

    MoO 3 thin films were prepared on Corning glass substrates using the chemical spray pyrolysis technique. A 0.1 M solution of ammonium molybdate tetrahydrate was used as precursor one. 5ml and 20 ml of the precursor solution was sprayed with the substrate temperature maintained at 623 K. Thermal treatment involved drying at 393 K for 8 h with continuous N 2 flow, followed by a vacuum annealing at 473 K for 2 h in a residual inert atmosphere. XRD indicates that the crystallographic structure corresponded to the orthorhombic α-MoO 3 phase. Electrical characterization was carried out in a system operating under high vacuum conditions. The samples could be cooled down to LN 2 temperature and heated in a controlled way up to 473 K. To elucidate the electrical response of the films to CO and H 2 O exposure, the I-V characteristic curve was measured over the whole temperature range. The electrical resistance of the films decreased with increasing temperature. In 5 ml films, the sensitivity to both gases increased which thermal treatment, reaching values between 40% and 60% at room temperature. On the contrary, the 20 ml films' sensitivity decreased almost half of their original values after thermal treatment

  14. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  15. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D.; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

    2015-01-01

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O 2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al 2 O 3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO 2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al 2 O 3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

  16. Development of thermal scanning probe microscopy for the determination of thin films thermal conductivity: application to ceramic materials for nuclear industry

    International Nuclear Information System (INIS)

    David, L.

    2006-10-01

    Since the 1980's, various thermal metrologies have been developed to understand and characterize the phenomena of transport of thermal energy at microscopic and submicroscopic scales. Thermal Scanning Probe Microscopy (SThM) is promising. Based on the analysis of the thermal interaction between an heated probe and a sample, it permits to probe the matter at the level of micrometric size in volumes. Performed in the framework of the development of this technique, this work more particularly relates to the study of thin films thermal conductivity. We propose a new modelling of the prediction of measurement with SThM. This model allows not only the calibration of the method for the measurement of bulk material thermal conductivity but also to specify and to better describe the probe - sample thermal coupling and to estimate, from its inversion, thin films thermal conductivity. This new approach of measurement has allowed the determination of the thermal conductivity of micrometric and sub-micrometric thicknesses of meso-porous silicon thin film in particular. Our estimates for the micrometric thicknesses are in agreement with those obtained by the use of Raman spectrometry. For the lower thicknesses of film, we give new data. Our model has, moreover, allowed a better definition of the in-depth resolution of the apparatus. This one is strongly linked to the sensitivity of SThM and strongly depends on the probe-sample thermal coupling area and on the geometry of the probe used. We also developed the technique by the vacuum setting of SThM. Our first results under this environment of measurement are encouraging and validate the description of the coupling used in our model. Our method was applied to the study of ceramics (SiC, TiN, TiC and ZrC) under consideration in the composition of future nuclear fuels. Because of the limitations of SThM in terms of sensitivity to thermal conductivity and in-depth resolution, measurements were also undertaken with a modulated thermo

  17. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alaa Ayad Al-mebir

    2016-01-01

    Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

  18. Structural, morphological, gas sensing and photocatalytic characterization of MoO3 and WO3 thin films prepared by the thermal vacuum evaporation technique

    Science.gov (United States)

    Arfaoui, A.; Touihri, S.; Mhamdi, A.; Labidi, A.; Manoubi, T.

    2015-12-01

    Thin films of molybdenum trioxide and tungsten trioxide were deposited on glass substrates using a simplified thermal evaporation under vacuum method monitored by heat treatment in flowing oxygen at 500 °C for 1 h. The structural and morphological properties of the films were investigated using X-ray diffraction, Raman spectroscopy, atomic force microscopy and scanning electron microscopy. The X-ray diffraction analysis shows that the films of MoO3 and WO3 were well crystallized in orthorhombic and monoclinic phase respectively with the crystallites preferentially oriented toward (2 0 0) direction parallel a-axis for both samples. In literature, we have shown in previous papers that structural and surface morphology of metal thin films play an important role in the gas detection mechanism. In this article, we have studied the response evolution of MoO3 and WO3 thin films sensors ethanol versus time, working temperature and the concentration of the ethanol. It was found that these films had high sensitivity to ethanol, which made them as a good candidate for the ethanol sensor. Finally, the photocatalytic activity of the samples was evaluated with respect to the degradation reaction of a wastewater containing methylene blue (MB) under UV-visible light irradiation. The molybdenum trioxide exhibits a higher degradation rate than the tungsten trioxide thin films under similar experimental conditions.

  19. Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2011-05-19

    Highlights: > In this work, thin films of CuIn{sub 5}S{sub 8} were successfully deposited onto glass substrates by thermal evaporation and annealed in air. > Post-depositional annealing effects on structural, optical and electrical properties of thermal evaporated CuIn{sub 5}S{sub 8} thin films were studied. > The results reported in this work make this material attractive as an absorber material in solar cells applications. - Abstract: Stoichiometric compound of copper indium sulfur (CuIn{sub 5}S{sub 8}) was synthesized by direct reaction of high purity elemental copper, indium and sulfur in an evacuated quartz tube. The phase structure of the synthesized material revealed the cubic spinel structure. The lattice parameter (a) of single crystals was calculated to be 10.667 A. Thin films of CuIn{sub 5}S{sub 8} were deposited onto glass substrates under the pressure of 10{sup -6} Torr using thermal evaporation technique. CuIn{sub 5}S{sub 8} thin films were then thermally annealed in air from 100 to 300 deg. C for 2 h. The effects of thermal annealing on their physico-chemical properties were investigated using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), optical transmission and hot probe method. XRD studies of CuIn{sub 5}S{sub 8} thin films showed that as-deposited films were amorphous in nature and transformed into polycrystalline spinel structure with strong preferred orientation along the (3 1 1) plane after the annealing at 200 deg. C. The composition is greatly affected by thermal treatment. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 4} cm{sup -1} was found. As increasing the annealing temperature, the optical energy band gap decreases from 1.83 eV for the as-deposited films to 1.43 eV for the annealed films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 300 deg. C.

  20. In-plane thermal conductivity measurements of ZnO-, ZnS-, and YSZ thin-films on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hartung, David; Gather, Florian; Kronenberger, Achim; Kuhl, Florian; Meyer, Bruno K.; Klar, Peter J. [I. Physikalisches Institut, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)

    2012-07-01

    In this work we present in-plane thermal conductivity measurements of ZnO-, ZnS-, and YSZ thin-films. Borosilicate glass with a thickness of 50 microns and low thermal conductivity for improving the signal to noise ratio was used as substrate material. The above different films are deposited by rf-sputtering and have a thickness of about 1 micron. Our approach is a steady-state measurement. A wide metal wire on the film is used as a heater and two parallel lying narrow wires at distances of 100 microns and 200 microns from the heater wire, respectively, serve as the temperature sensors. The wire structure design is transfered on to the thin films by photolithography and metal evaporation. Measurements of the in-plane thermal conductivities of the above mentioned materials are presented and compared with corresponding results in the literature.

  1. Application of complex geometrical optics to determination of thermal, transport, and optical parameters of thin films by the photothermal beam deflection technique.

    Science.gov (United States)

    Korte, Dorota; Franko, Mladen

    2015-01-01

    In this work, complex geometrical optics is, for what we believe is the first time, applied instead of geometrical or wave optics to describe the probe beam interaction with the field of the thermal wave in photothermal beam deflection (photothermal deflection spectroscopy) experiments on thin films. On the basis of this approach the thermal (thermal diffusivity and conductivity), optical (energy band gap), and transport (carrier lifetime) parameters of the semiconductor thin films (pure TiO2, N- and C-doped TiO2, or TiO2/SiO2 composites deposited on a glass or aluminum support) were determined with better accuracy and simultaneously during one measurement. The results are in good agreement with results obtained by the use of other methods and reported in the literature.

  2. Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

    Science.gov (United States)

    Zhu, Nai-Wei; Hu, Ming; Xia, Xiao-Xu; Wei, Xiao-Ying; Liang, Ji-Ran

    2014-04-01

    The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-°C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

  3. Young's Modulus and Coefficient of Linear Thermal Expansion of ZnO Conductive and Transparent Ultra-Thin Films

    Directory of Open Access Journals (Sweden)

    Naoki Yamamoto

    2011-01-01

    Full Text Available A new technique for measuring Young's modulus of an ultra-thin film, with a thickness in the range of about 10 nm, was developed by combining an optical lever technique for measuring the residual stress and X-ray diffraction for measuring the strain in the film. The new technique was applied to analyze the mechanical properties of Ga-doped ZnO (GZO films, that have become the focus of significant attention as a substitute material for indium-tin-oxide transparent electrodes. Young's modulus of the as-deposited GZO films decreased with thickness; the values for 30 nm and 500 nm thick films were 205 GPa and 117 GPa, respectively. The coefficient of linear thermal expansion of the GZO films was measured using the new technique in combination with in-situ residual stress measurement during heat-cycle testing. GZO films with 30–100 nm thickness had a coefficient of linear thermal expansion in the range of 4.3 × 10−6 – 5.6 × 10−6 °C−1.

  4. Reduced thermal budget processing of Y--Ba--Cu--O high temperature superconducting thin films by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Singh, R.; Sinha, S.; Hsu, N.J.; Ng, J.T.C.; Chou, P.; Thakur, R.P.S.; Narayan, J.

    1991-01-01

    Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high temperature superconductors, and related materials. As a reduced thermal budget processing technique, rapid isothermal processing (RIP) based on incoherent radiation as the source of energy can be usefully coupled to conventional MOCVD. In this paper we report on the deposition and characterization of high quality superconducting thin films of Y--Ba--Cu--O (YBCO) on MgO and SrTiO 3 substrates by RIP assisted MOCVD. By using a mixture of N 2 O and O 2 as the oxygen source films deposited initially at 600 degree C for 1 min and then at 740 degree C for 30 min are primarily c-axis oriented and with zero resistance being observed at 84 and 89 K for MgO and SrTiO 3 substrates, respectively. The zero magnetic field current densities at 77 K for MgO and SrTiO 3 substrates are 1.2x10 6 and 1.5x10 6 A/cm 2 , respectively. It is envisaged that high energy photons from the incoherent light source and the use of a mixture of N 2 O and O 2 as the oxygen source, assist chemical reactions and lower overall thermal budget for processing of these films

  5. Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

    International Nuclear Information System (INIS)

    Zhu Nai-Wei; Hu Ming; Xia Xiao-Xu; Wei Xiao-Ying; Liang Ji-Ran

    2014-01-01

    The VO 2 thin film with high performance of metal–insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO 2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO 2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO 2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-°C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively. (interdisciplinary physics and related areas of science and technology)

  6. Investigation of stacked elemental layers for Cu(In,Ga)Se{sub 2} thin film preparation by rapid thermal selenization

    Energy Technology Data Exchange (ETDEWEB)

    Stroth, Christiane; Ohland, Joerg; Mikolajczak, Ulf; Madena, Thomas; Keller, Jan; Parisi, Juergen; Hammer, Maria; Riedel, Ingo [Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, 26111 Oldenburg (Germany)

    2013-07-01

    Rapid thermal selenization of pure metallic (Cu-In-Ga) or selenium-containing (Cu-In-Ga-Se) precursors is a favorable method to fabricate Cu(In,Ga)Se{sub 2} absorber films for application in thin film solar cells. Because of its upscaling potential and the short process time it is a promising approach for the fabrication of CIGSe photovoltaic modules on industrial scale. As a preliminary work for prospective plasma-enhanced selenization of stacked elemental layers (SEL) the elements copper, indium and gallium were sequentially deposited on molybdenum coated soda-lime glass by thermal evaporation. The stacking order was varied and the precursors were annealed with different heating rates. Morphology, elemental depth distribution and phases of the layers were investigated before and after annealing using scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction. Furthermore the influence of different heating rates on phase transitions during annealing was studied by in-situ X-ray diffraction.

  7. New Au–Cu–Al thin film shape memory alloys with tunable functional properties and high thermal stability

    International Nuclear Information System (INIS)

    Buenconsejo, Pio John S.; Ludwig, Alfred

    2015-01-01

    An Au–Cu–Al thin film materials library prepared by combinatorial sputter-deposition was characterized by high-throughput experimentation in order to identify and assess new shape memory alloys (SMAs) in this alloy system. Automated resistance measurements during thermal cycling between −20 and 250 °C revealed a wide composition range that undergoes reversible phase transformations with martensite transformation start temperatures, reverse transformation finish temperatures and transformation hysteresis ranging from −15 to 149 °C, 5 to 185 °C and 8 to 60 K, respectively. High-throughput X-ray diffraction analysis of the materials library confirmed that the phase-transforming compositions can be attributed to the existence of the β-AuCuAl parent phase and its martensite product. The formation of large amount of phases based on face-centered cubic (Au–Cu), Al–Cu and Al–Au is responsible for limiting the range of phase-transforming compositions. Selected alloys in this system show excellent thermal cyclic stability of the phase transformation. The functional properties of these alloys, combined with the inherent properties of Au-based alloys, i.e. aesthetic value, oxidation and corrosion resistance, makes them attractive as smart materials for a wide range of applications, including applications as SMAs for elevated temperatures in harsh environment

  8. Titanate nanotube thin films with enhanced thermal stability and high-transparency prepared from additive-free sols

    Energy Technology Data Exchange (ETDEWEB)

    Koroesi, Laszlo, E-mail: korosi@enviroinvest.hu [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertvaros utca 2, H-7632 Pecs (Hungary); Papp, Szilvia [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertvaros utca 2, H-7632 Pecs (Hungary); Hornok, Viktoria [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Oszko, Albert [Department of Physical Chemistry and Materials Science, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary); Petrik, Peter; Patko, Daniel; Horvath, Robert [Institute for Technical Physics and Materials Science MFA, Research Center for Natural Sciences, Konkoly-Thege ut 29-33, H-1121 Budapest (Hungary); Dekany, Imre [Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, University of Szeged, Aradi vertanuk tere 1, H-6720 Szeged (Hungary)

    2012-08-15

    Titanate nanotubes were synthesized from TiO{sub 2} in alkaline medium by a conventional hydrothermal method (150 Degree-Sign C, 4.7 bar). To obtain hydrogen titanates, the as-prepared sodium titanates were treated with either HCl or H{sub 3}PO{sub 4} aqueous solutions. A simple synthesis procedure was devised for stable titanate nanotube sols without using any additives. These highly stable ethanolic sols can readily be used to prepare transparent titanate nanotube thin films of high quality. The resulting samples were studied by X-ray diffraction, N{sub 2}-sorption measurements, Raman spectroscopy, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy and spectroscopic ellipsometry. The comparative results of using two kinds of acids shed light on the superior thermal stability of the H{sub 3}PO{sub 4}-treated titanate nanotubes (P-TNTs). X-ray photoelectron spectroscopy revealed that P-TNTs contains P in the near-surface region and the thermal stability was enhanced even at a low ({approx}0.5 at%) concentration of P. After calcination at 500 Degree-Sign C, the specific surface areas of the HCl- and H{sub 3}PO{sub 4}-treated samples were 153 and 244 m{sup 2} g{sup -1}, respectively. The effects of H{sub 3}PO{sub 4} treatment on the structure, morphology and porosity of titanate nanotubes are discussed. - Graphical Abstract: TEM picture (left) shows P-TNTs with diameters about 5-6 nm. Inset shows a stable titanate nanotube sol illuminated by a 532 nm laser beam. Due to the presence of the nanoparticles the way of the light is visible in the sol. Cross sectional SEM picture (right) as well as ellipsometry revealed the formation of optical quality P-TNT films with thicknesses below 50 nm. Highlights: Black-Right-Pointing-Pointer H{sub 3}PO{sub 4} treatment led to TNTs with high surface area even after calcination at 500 Degree-Sign C. Black-Right-Pointing-Pointer H{sub 3}PO{sub 4}-treated TNTs preserved their nanotube morphology up to 500

  9. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  10. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  11. Enhancement of as-sputtered silver-tantalum oxide thin film coating on biomaterial stainless steel by surface thermal treatment

    Science.gov (United States)

    Alias, Rodianah; Mahmoodian, Reza; Shukor, Mohd Hamdi Abd; Yew, Been Seok; Muhamad, Martini

    2018-04-01

    Stainless steel 316L (SS316L) is extensively used as surgical/clinical tools due to its low carbon content and excellent mechanical characteristic. The fabrication of metal ceramic based on this metallic biomaterial favor its biofunctionality properties. However, instability phase of amorphous thin film lead to degradation, corrosion and oxidation. Thus, thin film coating requires elevated adhesion strength and higher surface hardness to meet clinical tools criteria. In this study, the SS316L was deposited with micron thickness of Ag-TaO thin film by using magnetron sputtering. The microstructure, elemental analysis and phase identification of Ag-TaO thin film were characterized by using FESEM, EDX and XRD, respectively; whereas the micro scratch test and micro hardness test were performed by using Micro Scratch Testing System and Vickers Micro Hardness Tester, respectively. It was found that the coating thin film's adhesion and hardness strength were improved from 672 to 2749 mN and 142 to 158 Hv respectively. It was found that the as-deposited surface were treated at 500 °C of temperatures with 2 °C/min ramping rate enhance 4.1 times of the adhesion strength value. Furthermore, FESEM characterization revealed coarsening structure of the thin film coating which can provide high durability service.

  12. Coupling of near-field thermal radiative heating and phonon Monte Carlo simulation: Assessment of temperature gradient in n-doped silicon thin film

    International Nuclear Information System (INIS)

    Wong, Basil T.; Francoeur, Mathieu; Bong, Victor N.-S.; Mengüç, M. Pinar

    2014-01-01

    Near-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density. - Highlights: • This study investigates temperature distribution in an n-doped silicon thin film. • Near-field radiative heating is treated as a volumetric phenomenon. • The temperature gradient is computed using phonon MC simulation. • Temperature of thin film can be approximated as uniform for radiation calculations. • If heat source is a pulsed radiation, a temperature gradient can be established

  13. Room-Temperature Voltage Tunable Phonon Thermal Conductivity via Reconfigurable Interfaces in Ferroelectric Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Ihlefeld, Jon F. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Foley, Brian M. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering; Scrymgeour, David A. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Michael, Joseph R. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); McKenzie, Bonnie B. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Medlin, Douglas L. [Sandia National Laboratories, Livermore, CA; Wallace, Margeaux [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Trolier-McKinstry, Susan [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Hopkins, Patrick E. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering

    2015-02-19

    Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. Here, we demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

  14. Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films.

    Science.gov (United States)

    Ihlefeld, Jon F; Foley, Brian M; Scrymgeour, David A; Michael, Joseph R; McKenzie, Bonnie B; Medlin, Douglas L; Wallace, Margeaux; Trolier-McKinstry, Susan; Hopkins, Patrick E

    2015-03-11

    Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. We demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

  15. Transitions of bandgap and built-in stress for sputtered HfZnO thin films after thermal treatments

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chih-Hung; Chen, Jian-Zhang [Institute of Applied Mechanics, National Taiwan University, Taipei City 10617, Taiwan (China); Cheng, I-Chun [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

    2013-08-28

    HfZnO thin films with various Hf contents are sputter-deposited on glass substrates from Hf{sub x}Zn{sub 1−x}O (x = 0, 2.5, 5, 7.5, and 10 at. %) targets at room temperature. The incorporation of Hf in the ZnO film leads to the amorphorization of the materials. The amorphous structures of high-Hf-content films remain after annealing at 600 °C for 30 min. The built-in stresses of as-deposited films are compressive. As the annealing temperature increases, the stresses are relaxed and even become tensile. The films exhibit a high transmission of 80% in the visible region. The optical bandgap increases with the Hf content, but it decreases with the annealing temperature. This can be attributed to the alteration of strain (stress) status in the films and atomic substitution. The reduction of bandgap partly results from the grain growth, which is due to the quantum confinement effect of the small grains. Hf doping increases the resistivity of ZnO owing to the disorder of the material structure and the higher bandgap, which result in more carrier traps and less thermally excited carriers in the conduction bands.

  16. Structural, morphological, wettability and thermal resistance properties of hydro-oleophobic thin films prepared by a wet chemical process

    International Nuclear Information System (INIS)

    Phani, A.R.

    2006-01-01

    The structural properties of fluorine containing polymer compounds make them highly attractive materials for hydro-oleophobic applications. However, most of these exhibit low surface energy and poor adhesion on the substrates. In the present investigation, crack free, smooth and uniform thin films of poly[4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole] -co-tetrafluoroethylene (TFD-co-TFE) with good adhesion have been deposited by wet chemical spin-coating technique on polished AISI 440C steel substrates. The as-deposited films (xerogel films) have been subjected to annealing for 1 h at different temperatures ranging from 100 to 500 deg. C in an argon atmosphere. The size growth of the nano-hemispheres increased from 8 nm for xerogel film to 28 nm for film annealed at 400 deg. C. It was found that as the annealing temperature increased from 100 to 400 deg. C, nano-hemisphere-like structures were formed, which in turn have shown increase in the water contact angle from 122 deg. to 147 deg. and oil (peanut) contact angle from 85 deg. to 96 deg. No change in the water contact angle (122 deg.) has been observed when the films deposited at room temperature were heated in air from 30 to 80 deg. C as well as exposed to steam for 8 days for 8 h/day indicating thermal stability of the film

  17. Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain.

    Science.gov (United States)

    Suzuki, Norihiro; Osada, Minoru; Billah, Motasim; Bando, Yoshio; Yamauchi, Yusuke; Hossain, Shahriar A

    2018-03-27

    Barium titanate (BaTiO3, hereafter BT) is an established ferroelectric material first discovered in the 1940s and still widely used because of its well-balanced ferroelectricity, piezoelectricity, and dielectric constant. In addition, BT does not contain any toxic elements. Therefore, it is considered to be an eco-friendly material, which has attracted considerable interest as a replacement for lead zirconate titanate (PZT). However, bulk BT loses its ferroelectricity at approximately 130 °C, thus, it cannot be used at high temperatures. Because of the growing demand for high-temperature ferroelectric materials, it is important to enhance the thermal stability of ferroelectricity in BT. In previous studies, strain originating from the lattice mismatch at hetero-interfaces has been used. However, the sample preparation in this approach requires complicated and expensive physical processes, which are undesirable for practical applications. In this study, we propose a chemical synthesis of a porous material as an alternative means of introducing strain. We synthesized a porous BT thin film using a surfactant-assisted sol-gel method, in which self-assembled amphipathic surfactant micelles were used as an organic template. Through a series of studies, we clarified that the introduction of pores had a similar effect on distorting the BT crystal lattice, to that of a hetero-interface, leading to the enhancement and stabilization of ferroelectricity. Owing to its simplicity and cost effectiveness, this fabrication process has considerable advantages over conventional methods.

  18. Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

    Directory of Open Access Journals (Sweden)

    Mason L. Terry

    2007-01-01

    Full Text Available The changes in open-circuit voltage (Voc, short-circuit current density (Jsc, and internal quantum efficiency (IQE of aLuminum induced crystallization, ion-assisted deposition (ALICIA polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.

  19. Thermally driven smoothening of molecular thin films: Structural transitions in n-alkane layers studied in real-time

    Energy Technology Data Exchange (ETDEWEB)

    Pithan, Linus; Weber, Christopher; Zykov, Anton; Sauer, Katrein; Opitz, Andreas; Kowarik, Stefan, E-mail: stefan.kowarik@physik.hu-berlin.de [Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin (Germany); Meister, Eduard; Brütting, Wolfgang [Institut für Physik, Universität Augsburg, 86135 Augsburg (Germany); Jin, Chenyu; Riegler, Hans [Max-Planck-Institut für Kolloid- und Grenzflächenforschung, 14476 Potsdam-Golm (Germany)

    2015-10-28

    We use thermal annealing to improve smoothness and to increase the lateral size of crystalline islands of n-tetratetracontane (TTC, C{sub 44}H{sub 90}) films. With in situ x-ray diffraction, we find an optimum temperature range leading to improved texture and crystallinity while avoiding an irreversible phase transition that reduces crystallinity again. We employ real-time optical phase contrast microscopy with sub-nm height resolution to track the diffusion of TTC across monomolecular step edges which causes the unusual smoothing of a molecular thin film during annealing. We show that the lateral island sizes increase by more than one order of magnitude from 0.5 μm to 10 μm. This desirable behavior of 2d-Ostwald ripening and smoothing is in contrast to many other organic molecular films where annealing leads to dewetting, roughening, and a pronounced 3d morphology. We rationalize the smoothing behavior with the highly anisotropic attachment energies and low surface energies for TTC. The results are technically relevant for the use of TTC as passivation layer and as gate dielectric in organic field effect transistors.

  20. Structural, optical and thermal properties of {beta}-SnS{sub 2} thin films prepared by the spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Khelia, C.; Ben Nasrallah, T.; Amlouk, M.; Belgacem, S. [Faculte des Sciences, Tunis (Tunisia). Lab. de Physique de la Matiere Condensee; Maiz, F. [Equipe de Photothermique de Nabeul, Inst. Preparatoire aux Etudes d' Ingenieur de Nabeul (Tunisia); Mnari, M. [Lab. de Chimie Analytique, Campus Univ., Tunis (Tunisia)

    2000-03-01

    Tin disulfide {beta}-SnS{sub 2} thin films have been prepared on pyrex substrates by the spray pyrolysis technique using tin tetrachloride and thiourea as starting materials. The depositions were carried out in the range of substrate temperatures from 240 to 400 C. Highly c-axis oriented {beta}-SnS{sub 2} films, having a strong (001) X-ray diffraction line are obtained at temperature 280 C and using concentration ratio in solution R = [S]/[Sn] = 2.5. Films surfaces were analyzed by contact atomic force microscopy (AFM) and by scanning electron microscopy (SEM) in order to understand the effect of the deposited temperature on the surface structure. On the other hand, from transmission and reflection spectra, the band gap energy determined is about 2.71 eV. Finally using the photodeflection spectroscopy technique, the thermal conductivity K{sub c} and diffusivity D{sub c} were obtained. Their values are 10 Wm{sup -1}K{sup -1} and 10{sup -5} m{sup 2}s{sup -1} respectively. (orig.)

  1. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  2. In-Situ Testing of the Thermal Diffusivity of Polysilicon Thin Films

    Directory of Open Access Journals (Sweden)

    Yi-Fan Gu

    2016-10-01

    Full Text Available This paper presents an intuitive yet effective in-situ thermal diffusivity testing structure and testing method. The structure consists of two doubly clamped beams with the same width and thickness but different lengths. When the electric current is applied through two terminals of one beam, the beam serves as thermal resistor and the resistance R(t varies as temperature rises. A delicate thermodynamic model considering thermal convection, thermal radiation, and film-to-substrate heat conduction was established for the testing structure. The presented in-situ thermal diffusivity testing structure can be fabricated by various commonly used micro electro mechanical systems (MEMS fabrication methods, i.e., it requires no extra customized processes yet provides electrical input and output interfaces for in-situ testing. Meanwhile, the testing environment and equipment had no stringent restriction, measurements were carried out at normal temperatures and pressures, and the results are relatively accurate.

  3. Annealing effect of thermal spike in MgO thin film prepared by cathodic vacuum arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Daoyun, E-mail: zhudy@gdut.edu.cn [Experiment Teaching Department, Guangdong University of Technology, Guangzhou 510006 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Zhao, Shoubai [School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510400 (China); Zheng, Changxi; Chen, Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); He, Zhenhui, E-mail: stshzh@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

    2013-12-16

    MgO films were prepared by using pulsed cathodic vacuum arc deposition technique. The substrate bias voltage was in the range of −150 to −750 V. Film structure was investigated by X-ray diffraction (XRD). The annealing effect of thermal spike produced by the impacting of energetic ions was analyzed. The calculated results showed that the lifetime of a thermal spike generated by an energetic ion with the energy of 150 eV was less than one picosecond and it was sufficient to allow Mg{sup 2+} or O{sup 2-} to move one bond length to satisfy the intrinsic stress relief in the affected volume. The MgO(200) lattice spacings of the films deposited at different bias voltages were all larger than the ideal value of 2.1056 Å. As the bias amplitude increased the lattice spacing decreased, which indicated that the compressive stress in the film was partially relieved with increasing impacting ion energy. The stress relief also could be reflected from the film orientation with bias voltage. The biaxial elastic modulus for MgO(100), MgO(110) and MgO(111) planes were calculated and they were M{sub (100)} = 199 GPa, M{sub (110)} = 335 GPa and M{sub (111)} = 340 GPa, respectively. The M values indicated that the preferred orientation will be MgO(200) due to the minimum energy configuration when the lattice strain was large. It was confirmed by the XRD results in our experiments. - Highlights: • MgO thin films with preferred orientation were obtained by CVAD technique. • Annealing effect of a thermal spike in MgO film was discussed. • Lattice spacing of MgO film decreased with the increase of bias voltage. • Film preferred orientation changed from (200) to (220) as the bias voltage increased.

  4. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Haochun; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hiramatsu, Hidenori [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ueda, Shigenori [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Ohashi, Naoki [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kamiya, Toshio, E-mail: tkamiya@msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2016-09-01

    We investigated the effects of thermal annealing for high-density subgap states in amorphous In–Ga–Zn–O (a-IGZO) films by focusing on low-quality defective films deposited without O{sub 2} supply (LQ films). It was found that most of the subgap states were thermally unstable and decreased dramatically by annealing at ≤ 400 °C in O{sub 2}. These defects (but with different shapes) were further reduced by 600 °C annealing, whose subgap states appeared similar to that of a-IGZO films deposited at an optimum condition (high quality, HQ films) and annealed at 300 °C. However, electron Hall mobilities and field-effect mobilities of their thin-film transistors (TFTs) were low for the LQ films/TFTs even annealed at 600 °C compared to those for the HQ films/TFTs. It implies that not only the subgap states but also heavier structural disorder deteriorated the electron transport in the LQ films. The present results also suggest that although a-IGZO deposition without O{sub 2} supply is sometimes employed in particular for DC sputtering, supplying some O{sub 2} gas would be better to produce good TFTs at lower temperatures. - Highlights: • Effects of thermal annealing on subgap states in a-In–Ga–Zn–O films were studied. • Hard X-ray photoemission spectroscopy was employed. • Low-quality films require annealing at 600 °C to make an operating transistor. • This temperature is much higher than those for high-quality films (300–400 °C). • The high temperature is required because some subgap states are very stable.

  5. Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery

    International Nuclear Information System (INIS)

    Kim, Han-Ki; Yoon, Young Soo

    2004-01-01

    We report on the fabrication of a LiCoO 2 film for an all-solid-state thin film microbattery by using a rapid-thermal-annealing (RTA) process. The LiCoO 2 films were grown by rf magnetron sputtering using a synthesized LiCoO 2 target in a [O 2 /(Ar+O 2 )] ratio of 10%. Scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) analysis results showed that the surface layer on the as-deposited LiCoO 2 film was completely removed by rapid thermal annealing process in oxygen ambient for 20 min. In addition, the thin film microbattery fabricated with the annealed LiCoO 2 film shows fairly stable cyclability with a specific discharge capacity of 56.49 μAh/cm2 μm. These results show the possibility of the RTA LiCoO 2 film and rapid thermal annealing process being a promising cathode material and annealing process for thin film microbatteries, respectively

  6. Thermal spike model interpretation of sputtering yield data for Bi thin films irradiated by MeV {sup 84}Kr{sup 15+} ions

    Energy Technology Data Exchange (ETDEWEB)

    Mammeri, S. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Ouichaoui, S., E-mail: souichaoui@gmail.com [Université des Sciences et de la Technologie H. Boumediene (USTHB), Faculté de Physique, Laboratoire SNIRM, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers (Algeria); Ammi, H. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Pineda-Vargas, C.A. [iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Faculty of Health and Wellness Sciences, CPUT, P.O. Box 1906, Bellville 7535 (South Africa); Dib, A. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Msimanga, M. [iThemba LABS, National Research Foundation, P. Bag 11, Wits 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, P. Bag X680, Pretoria 001 (South Africa)

    2015-07-01

    A modified thermal spike model initially proposed to account for defect formation in metals within the high heavy ion energy regime is adapted for describing the sputtering of Bi thin films under MeV Kr ions. Surface temperature profiles for both the electronic and atomic subsystems have been carefully evaluated versus the radial distance and time with introducing appropriate values of the Bi target electronic stopping power for multi-charged Kr{sup 15+} heavy ions as well as different target physical proprieties like specific heats and thermal conductivities. Then, the total sputtering yields of the irradiated Bi thin films have been determined from a spatiotemporal integration of the local atomic evaporation rate. Besides, an expected non negligible contribution of elastic nuclear collisions to the Bi target sputtering yields and ion-induced surface effects has also been considered in our calculation. Finally, the latter thermal spike model allowed us to derive numerical sputtering yields in satisfactorily agreement with existing experimental data both over the low and high heavy ion energy regions, respectively, dominated by elastic nuclear collisions and inelastic electronic collisions, in particular with our data taken recently for Bi thin films irradiated by 27.5 MeV Kr{sup 15+} heavy ions. An overall consistency of our model calculation with the predictions of sputtering yield theoretical models within the target nuclear stopping power regime was also pointed out.

  7. Thermal effects and in-plane magnetic anisotropy in thin-film recording media

    International Nuclear Information System (INIS)

    Ajan, Antony; Abarra, E.N.; Acharya, B.R.; Inomata, A.; Okamoto, I.; Shinohara, M.

    2003-01-01

    The effect of thermal activation on the in-plane magnetic anisotropy [measured as orientation ratio (OR)] of granular longitudinal magnetic recording media is investigated. Temperature and time dependent studies were made on media with different magnetic layer thicknesses. We find that OR is independent of temperature for a stable medium but shows a large increase with temperature for thermally unstable media. At low temperatures and high field sweep rates, the OR values are found to be the same, independent of the magnetic layer thickness. The unique value when thermal activation is reduced is consistent with the high population of the cobalt c axes along the texturing direction as the origin of anisotropy

  8. Thermal expansion coefficients of obliquely deposited MgF2 thin films and their intrinsic stress.

    Science.gov (United States)

    Jaing, Cheng-Chung

    2011-03-20

    This study elucidates the effects of columnar angles and deposition angles on the thermal expansion coefficients and intrinsic stress behaviors of MgF2 films with columnar microstructures. The behaviors associated with temperature-dependent stresses in the MgF2 films are measured using a phase-shifting Twyman-Green interferometer with a heating stage and the application of a phase reduction algorithm. The thermal expansion coefficients of MgF2 films at various columnar angles were larger than those of glass substrates. The intrinsic stress in the MgF2 films with columnar microstructures was compressive, while the thermal stress was tensile. The thermal expansion coefficients of MgF2 films with columnar microstructures and their intrinsic stress evidently depended on the deposition angle and the columnar angle.

  9. The film thickness dependent thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Xiao Xiudi; Xu Gang, E-mail: xiudixiao@163.com; Xiong Bin; Chen Deming; Miao Lei [Chinese Academy of Sciences, Key Laboratory of Renewable Energy and Gas Hydrates, Guangzhou Institute of Energy Conversion (China)

    2012-03-15

    The monolayer Al{sub 2}O{sub 3}:Ag thin films were prepared by magnetron sputtering. The microstructure and optical properties of thin film after annealing at 700 Degree-Sign C in air were characterized by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometer. It revealed that the particle shape, size, and distribution across the film were greatly changed before and after annealing. The surface plasmon resonance absorption and thermal stability of the film were found to be strongly dependent on the film thickness, which was believed to be associated with the evolution process of particle diffusion, agglomeration, and evaporation during annealing at high temperature. When the film thickness was smaller than 90 nm, the film SPR absorption can be attenuated until extinct with increasing annealing time due to the evaporation of Ag particles. While the film thickness was larger than 120 nm, the absorption can keep constant even after annealing for 64 h due to the agglomeration of Ag particles. On the base of film thickness results, the multilayer Al{sub 2}O{sub 3}:Ag solar selective thin films were prepared and the thermal stability test illustrated that the solar selectivity of multilayer films with absorbing layer thickness larger than 120 nm did not degrade after annealing at 500 Degree-Sign C for 70 h in air. It can be concluded that film thickness is an important factor to control the thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers.

  10. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    Science.gov (United States)

    Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

    2017-07-01

    Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

  11. Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated As2Se3 Thin Films

    Directory of Open Access Journals (Sweden)

    Pankaj Sharma

    2008-01-01

    Full Text Available The present paper reports the effect of Ge addition on the optical band gap and refractive index of As2Se3 thin films. Thin films of As2Se3 and (As2Se390Ge10 were prepared by thermal evaporation technique at base pressure 10−4 Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to As2Se3. The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.

  12. High-performance polyamide thin-film composite nanofiltration membrane: Role of thermal treatment

    Science.gov (United States)

    Liu, Baicang; Wang, Shuai; Zhao, Pingju; Liang, Heng; Zhang, Wen; Crittenden, John

    2018-03-01

    Nanofiltration (NF) membranes have many excellent applications (e.g., removing multivalent ions and pretreating water before reverse osmosis, RO), but their relatively high cost limits their application. Especially in recent years, researchers have paid substantial attention to reducing the cost of NF membranes. In this paper, high-performance NF membranes were fabricated using interfacial polymerization (IP) methods. The polymer concentration, IP solution concentration, and thermal treatment conditions were varied. The synthesized membranes were characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), a contact angle goniometer, X-ray photoelectron spectroscopy (XPS), attenuated total reflectance fourier transform infrared (ATR-FTIR) spectroscopy, and performance tests. The results show that water flux was significantly improved using a hot-water thermal treatment method. Our fabricated thermal-treated NF membrane had an approximately 15% higher water permeability with a value of 13.6 L/(m2 h bar) than that of the commercially available GE HL membrane with a value of 11.8 L/(m2 h bar). Our membranes had the same MgSO4 rejection as that of the GE HL membrane. We found that the thermal treatment causes the NF membrane surface to be smoother and have a high crosslinking degree.

  13. Analytical modeling of thin film neutron converters and its application to thermal neutron gas detectors

    Energy Technology Data Exchange (ETDEWEB)

    Piscitelli, F; Esch, P Van, E-mail: piscitelli@ill.fr [Institut Laue-Langevin (ILL), 6, Jules Horowitz, 38042 Grenoble (France)

    2013-04-15

    A simple model is explored mainly analytically to calculate and understand the PHS of single and multi-layer thermal neutron detectors and to help optimize the design in different circumstances. Several theorems are deduced that can help guide the design.

  14. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    Science.gov (United States)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2017-04-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  15. Rapid thermal annealing of FePt and FePt/Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Brombacher, Christoph

    2011-01-10

    Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

  16. Thermal stability analysis of thin film Ni-NiOx-Cr tunnel junctions

    International Nuclear Information System (INIS)

    Krishnan, S.; Emirov, Y.; Bhansali, S.; Stefanakos, E.; Goswami, Y.

    2010-01-01

    This research reports on the thermal stability of Ni-NiO x -Cr based Metal-Insulator-Metal (MIM) junction. Effect of annealing (250 to 400 o C) on the electrical and physical transport properties of this MIM stack was understood to determine the thermal budget allowable when using these diodes. MIM tunnel junctions were fabricated by sputtering and the NiO x was formed through reactive sputtering. The performance of the tunnel junctions after exposure to elevated temperatures was investigated using current-voltage measurements. This was correlated to the structural properties of the interfaces at different temperatures, characterized by Atomic Force Microscopy, X-ray Diffraction and Transmission Electron Microscopy (TEM). MIM tunnel junctions annealed up to 350 o C demonstrated satisfactory current-voltage characteristics and sensitivity. MIM junctions exhibited improved electrical performance as they were heated to 250 o C (sensitivity of 42 V -1 and a zero-bias resistance of ∼300 Ω) due to improved crystallization of the layers within the stack. At temperatures over 350 o C, TEM and Energy Dispersive Spectra confirmed a breakdown of the MIM structure due to interdiffusion.

  17. Study of 'liquid gold' coatings: Thermal decomposition and formation of metallic thin films

    International Nuclear Information System (INIS)

    Deram, V.; Turrell, S.; Darque-Ceretti, E.; Aucouturier, M.

    2006-01-01

    Organo-metallic solutions called liquid gold are largely used to obtain thin gilded films which are employed for decorative, technological and functional uses. However, these films often prove to be fragile with respect to use, resulting in loss of brilliance or even eventual film removal. An understanding of the behaviour of the layers requires good knowledge of the materials themselves. The present work was undertaken to better understand the evolution of the structural properties of liquid gold as it undergoes heat-processing. Accordingly, we followed the thermal decomposition processes of liquid gold coatings and the formation of the gilded metal layer using a combination of experimental techniques. First, thermal analyses coupled with mass spectrometry and infrared spectroscopy gave information concerning the decomposition of the organic medium. It has been found that the process of film formation can be decomposed into three steps, the second of which is an abrupt transition between 300 and 350 deg. C. Details on this transition have been obtained using real-time X-ray Diffraction and Rutherford Backscattering Spectrometry. Above 350 deg. C, the microstructure of the coating is reorganized to obtain a final layer which contains particles, of the size of a few hundreds nanometers, as shown by Transmission Electron Microscopy

  18. Evolution of structural and magnetic properties of sputtered nanocrystalline Co thin films with thermal annealing

    International Nuclear Information System (INIS)

    Kumar, Dileep; Gupta, Ajay

    2007-01-01

    Ultrafine grain films of cobalt prepared using ion-beam sputtering have been studied using X-ray diffraction (XRD), X-ray reflectivity (XRR), atomic force microscopy (AFM) and magneto-optical Kerr effect (MOKE) measurements. As-prepared films have very smooth surface owing to the ultrafine nature of the grains. Evolution of the structure and morphology of the film with thermal annealing has been studied and the same is correlated with the magnetic properties. Above an annealing temperature of 300 deg. C, the film gradually transforms from HCP to FCC phase that remains stable at room temperature. A significant contribution of the surface energy, due to small grain size, results in stabilisation of the FCC phase at room temperature. It is found that other processes like stress relaxation, grain texturing and growth also exhibit an enhanced rate above 300 deg. C, and may be associated with an enhanced mobility of the atoms above this temperature. Films possess a uniaxial anisotropy, which exhibits a non-monotonous behaviour with thermal annealing. The observed variation in the anisotropy and coercivity with annealing can be understood in terms of variations in the internal stresses, surface roughness, and grain structure

  19. Static magnetism and thermal switching in randomly oriented L10 FePt thin films

    Science.gov (United States)

    Lisfi, A.; Pokharel, S.; Alqarni, A.; Akioya, O.; Morgan, W.; Wuttig, M.

    2018-05-01

    Static magnetism and thermally activated magnetic relaxation were investigated in granular FePt films (20 nm-200 nm thick) with random magnetic anisotropy through hysteresis loop, torque curve and magnetization time dependence measurements. While the magnetism of thicker film (200 nm thick) is dominated by a single switching of the ordered L10 phase, thinner film (20 nm) displays a double switching, which is indicative of the presence of the disordered cubic phase. The pronounced behavior of double switching in thinner film suggests that the film grain boundary is composed of soft cubic magnetic phase. The magnetic relaxation study reveals that magnetic viscosity S of the films is strongly dependent on the external applied field and exhibits a maximum value (12 kAm) around the switching field and a vanishing behavior at low (1 kOe) and large (12 kOe) fields. The activation volume of the thermal switching was found to be much smaller than the physical volume of the granular structure due to the incoherent rotation mode of the magnetization reversal mechanism, which is established to be domain wall nucleation.

  20. Room temperature and thermal decomposition of magnesium hydride/deuteride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ares, J.R.; Leardini, F.; Bodega, J.; Macia, M.D.; Diaz-Chao, P.; Ferrer, I.J.; Fernandez, J.F.; Sanchez, C. [Universidad Autonoma de Madrid (Spain). Lab. de Materiales de Interes en Energias Renovables

    2010-07-01

    Magnesium hydride (MgH{sub 2}) can be considered an interesting material to store hydrogen as long as two main drawbacks were solved: (i) its high stability and (ii) slow (de)hydriding kinetics. In that context, magnesium hydride films are an excellent model system to investigate the influence of structure, morphology and dimensionality on kinetic and thermodynamic properties. In the present work, we show that desorption mechanism of Pd-capped MgH{sub 2} at room temperature is controlled by a bidimensional interphase mechanism and a similar rate step limiting mechanism is observed during thermal decomposition of MgH{sub 2}. This mechanism is different to that occurring in bulk MgH{sub 2} (nucleation and growth) and obtained activation energies are lower than those reported in bulk MgH{sub 2}. We also investigated the Pd-capping properties upon H-absorption/desorption by means of RBS and isotope experiments. (orig.)

  1. Thin film coatings for new generation infrared thermal picture synthesising devices

    International Nuclear Information System (INIS)

    Rodriguez, J.V.A.

    2001-01-01

    The usefulness of infrared imaging devices has been proved by the continuous marketing of such products for more than 10 years. The need to produce thermal images with high apparent temperature values (600-800 deg. C) in the 3-5 micron waveband, mean that the operating temperature of the device pixels must be high. Such high temperature operation compromises the lifetime and switching speed of the pixels. It is hence desired that the real temperature of the pixels is kept as low as possible to achieve the desired apparent temperature. This requires coating the pixels with a high emissivity coating in the infrared. Current devices have multi-layer double resonating cavity interference structures built on their top surface. These structures enhance the emissivity of the pixels to a value around 50%. However, the manufacturing of such structures on top of the delicate pixels is time intensive and involves many delicate processes, which increase the probability of device failure during manufacture. The work presented in this thesis aims at achieving a simple and quick process that will provide the pixels with a single high emissivity coating. The process is carried out using standard cleanroom equipment with the coating aimed at being than one micron thick, and being able to withstand the operating temperatures of the pixel under ambient atmospheres. The work concludes with an optimised sputter-deposition process of two coatings with a combined thickness of 7000A, followed by annealing at 700 deg. C. This process achieves a coating with an emissivity of 84%. The work also describes the deposition of a thermally stable SiC coating which is highly transparent in the infrared. (author)

  2. Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

    International Nuclear Information System (INIS)

    Govindaraju, N.; Singh, R.N.

    2011-01-01

    Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

  3. An investigation of the insertion of the cations H{sup +}, Na{sup +}, K{sup +} on the electrochromic properties of the thermally evaporated WO{sub 3} thin films grown at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Patel, K.J. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Panchal, C.J., E-mail: cjpanchal_msu@yahoo.com [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Desai, M.S. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Mehta, P.K. [Physics Department, Faculty of Science, M.S. University of Baroda, Vadodara 390002, Gujarat (India)

    2010-11-01

    The phenomenon of electrochromism in tungsten trioxide (WO{sub 3}) thin films has recently attained considerable interest due to their enormous applications in inorganic thin film electrochromic devices. We have investigated the compositional, optical, and electrochromic properties of the WO{sub 3} thin films grown at different substrate temperatures by the thermal evaporation of WO{sub 3} powder. The thin films were characterized using X-ray diffraction (XRD), X-ray photo-emission spectroscopy (XPS), and electrochemical techniques. The XPS analysis suggested that the oxygen to tungsten (O/W) ratio decreases, i.e., the oxygen deficiency increases, on increasing the substrate temperature up to 500 deg. C. The electrochemical analysis provided a comparative study of the coloration efficiency (CE) of the WO{sub 3} thin films intercalated with three different ions viz. H{sup +}, Na{sup +}, and K{sup +}. The effect of the variation of the substrate temperature on the CE and the switching time have also been investigated for the WO{sub 3} thin films intercalated with H{sup +} ions; the thin films deposited at RT and intercalated with H{sup +} ions are found to possess adequate electrochromic properties viz. CE and switching time from device point of view.

  4. Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

    Science.gov (United States)

    Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

    2018-02-01

    InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

  5. Magnetron-sputter deposition of Fe3S4 thin films and their conversion into pyrite (FeS2) by thermal sulfurization for photovoltaic applications

    International Nuclear Information System (INIS)

    Liu Hongfei; Chi Dongzhi

    2012-01-01

    The authors report on the fabrication of FeS 2 (pyrite) thin films by sulfurizing Fe 3 S 4 that were deposited by direct current magnetron sputtering at room temperature. Under the selected sputtering conditions, Fe 3 S 4 nanocrystal films are obtained and the nanocrystals tend to locally cluster and closely pack into ricelike nanoparticles with an increase in film thickness. Meanwhile, the film tends to crack when the film thickness is increased over ∼1.3 μm. The film cracking can be effectively suppressed by an introduction of a 3-nm Cu intermediate layer prior to Fe 3 S 4 deposition. However, an introduction of a 3-nm Al intermediate layer tends to enhance the film cracking. By post-growth thermal sulfurization of the Fe 3 S 4 thin films in a tube-furnace, FeS 2 with high phase purity, as determined by using x ray diffraction, is obtained. Optical absorption spectroscopy was employed to characterize the resultant FeS 2 thin films, which revealed two absorption edges at 0.9 and 1.2 eV, respectively. These two absorption edges are assigned to the direct bandgap (0.9 eV) and the indirect allowed transitions (1.2 eV) of FeS 2 , respectively.

  6. Negative thermal expansion and magnetocaloric effect in Mn-Co-Ge-In thin films

    Science.gov (United States)

    Liu, Y.; Qiao, K. M.; Zuo, S. L.; Zhang, H. R.; Kuang, H.; Wang, J.; Hu, F. X.; Sun, J. R.; Shen, B. G.

    2018-01-01

    MnCoGe-based alloys with magnetostructural transition show giant negative thermal expansion (NTE) behavior and magnetocaloric effects (MCEs) and thus have attracted a lot of attention. However, the drawback of bad mechanical behavior in these alloys obstructs their practical applications. Here, we report the growth of Mn-Co-Ge-In films with thickness of about 45 nm on (001)-LaAlO3, (001)-SrTiO3, and (001)-Al2O3 substrates. The films grown completely overcome the breakable nature of the alloy and promote its multifunctional applications. The deposited films have a textured structure and retain first-order magnetostructural transition. NTE and MCE behaviors associated with the magnetostructural transition have been studied. The films exhibit a completely repeatable NTE around room temperature. NTE coefficient α can be continuously tuned from the ultra-low expansion (α ˜ -2.0 × 10-7/K) to α ˜ -6.56 × 10-6/K, depending on the growth and particle size of the films on different substrates. Moreover, the films exhibit magnetic entropy changes comparable to the well-known metamagnetic films. All these demonstrate potential multifunctional applications of the present films.

  7. Spatially distributed damage detection in CMC thermal protection materials using thin-film piezoelectric sensors

    Science.gov (United States)

    Kuhr, Samuel J.; Blackshire, James L.; Na, Jeong K.

    2009-03-01

    Thermal protection systems (TPS) of aerospace vehicles are subjected to impacts during in-flight use and vehicle refurbishment. The damage resulting from such impacts can produce localized regions that are unable to resist extreme temperatures. Therefore it is essential to have a reliable method to detect, locate, and quantify the damage occurring from such impacts. The objective of this research is to demonstrate a capability that could lead to detecting, locating and quantifying impact events for ceramic matrix composite (CMC) wrapped tile TPS via sensors embedded in the TPS material. Previous research had shown a correlation between impact energies, material damage state, and polyvinylidene fluoride (PVDF) sensor response for impact energies between 0.07 - 1.00 Joules, where impact events were located directly over the sensor positions1. In this effort, the effectiveness of a sensor array is evaluated for detecting and locating low energy impacts on a CMC wrapped TPS. The sensor array, which is adhered to the internal surface of the TPS tile, is used to detect low energy impact events that occur at different locations. The analysis includes an evaluation of signal amplitude levels, time-of-flight measurements, and signal frequency content. Multiple impacts are performed at each location to study the repeatability of each measurement.

  8. Two-stage crossover from thermal to quantum flux creep of dilute vortex ensembles in various high-Tc superconducting thin films

    International Nuclear Information System (INIS)

    Akerman, Johan J.; Venturini, E. L.; Siegal, M. P.; Yun, S. H.; Karlsson, U. O.; Rao, K. V.

    2001-01-01

    The thermal-to-quantum flux creep crossover at low vortex densities has been studied in YBa 2 Cu 3 O 7 , TlBa 2 CaCu 2 O 7-δ , and HgBa 2 CaCu 2 O 6+δ thin films using ac susceptibility. The crossover temperatures T cr are 10--11, 17, and 30 K, respectively. Both thermal and quantum flux creep is suppressed as the vortex density is decreased. We observe a two-stage nature in the crossover behavior which appears to be a general property of all the three materials studied

  9. Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films

    NARCIS (Netherlands)

    Scorticati, D.; Illiberi, A.; Bor, Teunis Cornelis; Eijt, S.W.H.; Schut, H.; Römer, Gerardus Richardus, Bernardus, Engelina; Klein Gunnewiek, Michel; Lenferink, Aufrid T.M.; Kniknie, B.; Joy, R.M.; Dorenkamper, M.S.; de Lange, D.F.; Otto, Cornelis; Borsa, D.; Soppe, W.J.; Huis in 't Veld, Bert

    2015-01-01

    Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400–1000 nm range did not change significantly. We studied the

  10. Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films

    NARCIS (Netherlands)

    Scorticati, D.; Illiberi, A.; Bor, T.C.; Eijt, S.W.H.; Schut, H.; Römer, G.R.B.E.; Klein Gunnewiek, M.; Lenferink, A.T.M.; Kniknie, B.J.; Mary Joy, R.; Dorenkamper, M.S.; Lange, D.F. de; Otto, C.; Borsa, D.; Soppe, W.J.; Huis in 't Veld, A.J.

    2015-01-01

    Abstract Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400-1000 nm range did not change significantly. We studied the

  11. Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing: Solvent and Thickness Effects

    Directory of Open Access Journals (Sweden)

    Qiuyan Yang

    2017-10-01

    Full Text Available Solvent vapor annealing of block copolymer (BCP thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for nanolithography and hybrid materials preparation. However, precise control of the arising morphologies is essential, but in most cases difficult to achieve. In this work, we investigated the solvent and thickness effects on the morphology of poly(styrene-b-2 vinyl pyridine (PS-b-P2VP thin films with a film thickness range from 0.4 L0 up to 0.8 L0. Ordered perpendicular structures were achieved. One of the main merits of our work is that the phase behavior of the ultra-high molecular weight BCP thin films, which hold a 100-nm sized domain distance, can be easily monitored via current available techniques, such as scanning electron microscope (SEM, atomic force microscope (AFM, and transmission electron microscope (TEM. Systematic monitoring of the self-assembly behavior during solvent vapor annealing can thus provide an experimental guideline for the optimization of processing conditions of related BCP films systems.

  12. Thermal stability of nanocomposite CrC/a-C:H thin films

    International Nuclear Information System (INIS)

    Gassner, G.; Mayrhofer, P.H.; Patscheider, J.; Mitterer, C.

    2007-01-01

    The thermal stability of low-friction Me-C/a-C:H coatings is important for their potential applications in the tool and automotive industry. Recently we showed that CrC x /a-C:H coatings prepared by unbalanced magnetron sputtering of a Cr target in Ar + CH 4 glow discharges exhibit a nanocomposite structure where metastable fcc CrC nanocrystals are encapsulated by an a-C:H phase. Here, we present the structural evolution of these nanocomposite CrC/a-C:H coatings during annealing. High-temperature X-ray diffraction in vacuum and differential scanning calorimetry (DSC) combined with thermo-gravimetric analysis in Ar atmosphere indicate decomposition of the formed metastable fcc CrC phase and subsequent formation of Cr 3 C 2 and Cr 7 C 3 and structural transformation of the a-C:H matrix phase towards higher sp 2 bonding contents at temperatures above 450 deg. C. Combined DSC and mass spectrometer analysis as well as elemental profiling after annealing in vacuum by elastic recoil detection analysis relate this transformation to the loss of bonded hydrogen at temperatures above 200 deg. C. Due to these structural changes the coefficient of friction depends on the annealing temperature of the nanocomposite a-C:H coatings and shows a minimum of ∼ 0.13 for T = 200 deg. C. The more complex tribochemical reactions, influenced by the hydrogen loss from the coating during in-situ high temperatures ball-on disc tests, result in coefficient of friction values below 0.05 for T < 120 deg. C

  13. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  14. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO2/Si substrates

    International Nuclear Information System (INIS)

    Valladares, L. de los Santos; Dominguez, A. Bustamante; Llandro, J.; Holmes, S.; Quispe, O. Avalos; Langford, R.; Aguiar, J. Albino; Barnes, C.H.W.

    2014-01-01

    Highlights: • Annealing promotes outgassing of SiO 2 /Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO 2 islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO 2 /Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10 8 , respectively. Over an area of 22 × 10 −3 cm 2 the density of bubbles obtained at slow annealing (9 × 10 3 cm −2 ) is smaller than that at rapid annealing (6.4 × 10 4 cm −2 ), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as 900 °C, leads to surface migration of the

  15. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Valladares, L. de los Santos, E-mail: ld301@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Dominguez, A. Bustamante [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Llandro, J.; Holmes, S. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Quispe, O. Avalos [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Langford, R. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Laboratório de Supercondutividade e Materiais Avançados, Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife (Brazil); Barnes, C.H.W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom)

    2014-10-15

    Highlights: • Annealing promotes outgassing of SiO{sub 2}/Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO{sub 2} islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO{sub 2}/Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10{sup 8}, respectively. Over an area of 22 × 10{sup −3} cm{sup 2} the density of bubbles obtained at slow annealing (9 × 10{sup 3} cm{sup −2}) is smaller than that at rapid annealing (6.4 × 10{sup 4} cm{sup −2}), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as

  16. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  17. Flush Mounting Of Thin-Film Sensors

    Science.gov (United States)

    Moore, Thomas C., Sr.

    1992-01-01

    Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.

  18. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    International Nuclear Information System (INIS)

    Kim, Byunggu; Leem, Jae-Young

    2017-01-01

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  19. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

    2017-01-15

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  20. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  1. Application-related properties of giant magnetostrictive thin films

    International Nuclear Information System (INIS)

    Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

    2002-01-01

    In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

  2. Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation

    International Nuclear Information System (INIS)

    Debelle, A.; Abadias, G.; Michel, A.; Jaouen, C.; Pelosin, V.

    2007-01-01

    In an effort to address the understanding of the origin of growth stress in thin films deposited under very energetic conditions, the authors investigated the stress state and microstructure of Mo thin films grown by ion beam sputtering (IBS) as well as the stress relaxation processes taking place during subsequent thermal annealing or ion irradiation. Different sets of samples were grown by varying the IBS deposition parameters, namely, the energy E 0 and the flux j of the primary ion beam, the target-to-sputtering gas mass ratio M 1 /M 2 as well as film thickness. The strain-stress state was determined by x-ray diffraction using the sin 2 ψ method and data analyzed using an original stress model which enabled them to correlate information at macroscopic (in terms of stress) and microscopic (in terms of defect concentration) levels. Results indicate that these refractory metallic thin films are characterized by a high compressive growth stress (-2.6 to -3.8 GPa), resulting from the creation of a large concentration (up to ∼1.4%) of point or cluster defects, due to the atomic peening mechanism. The M 1 /M 2 mass ratio enables tuning efficiently the mean deposited energy of the condensing atoms; thus, it appears to be the more relevant deposition parameter that allows modifying both the microstructure and the stress level in a significant way. The growth stress comes out to be highly unstable. It can be easily relaxed either by postgrowth thermal annealing or ion irradiation in the hundred keV range at very low dose [<0.1 dpa (displacement per atom)]. It is shown that thermal annealing induces deleterious effects such as oxidation of the film surface, decrease of the film density, and in some cases adhesion loss at the film/substrate interface, while ion irradiation allows controlling the stress level without generating any macroscopic damage

  3. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  4. Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

    OpenAIRE

    Hussain, Arshad; Ahmed, Rashid; Ali, N.; Shaari, A.; Luo, Jing-Ting; Fu, Yong Qing

    2017-01-01

    Copper antimony sulphide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300-375°C. The structural and optical properties of the as-deposited and annealed fil...

  5. Role of heat treatment on structural and optical properties of thermally evaporated Ga{sub 10}Se{sub 81}Pb{sub 9} chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Sebaii, A.A., E-mail: ahmedelsebaii@yahoo.com [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrews College, Gorakhpur 273001 (India); Al-Marzouki, F.M.; Faidah, A.S.; Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia)

    2012-08-15

    Amorphous chalcogenides, based on Se, have become materials of commercial importance and were widely used for optical storage media. The present work deals with the structural and optical properties of Ga{sub 10}Se{sub 81}Pb{sub 9} ternary chalcogenide glass prepared by melt quenching technique. The glass transition, crystallization and melting temperatures of the synthesized glass were measured by non-isothermal DSC measurements at a constant heating rate of 30 K/min. Thin films of thickness 4000 A were prepared by thermal evaporation techniques on glass/Si (1 0 0) wafer substrate. These thin films were thermally annealed for two hours at three different annealing temperatures of 345, 360 and 375 K, which were in between the glass transition and crystallization temperatures of the Ga{sub 10}Se{sub 81}Pb{sub 9} glass. The structural, morphological and optical properties of as-prepared and annealed thin films were studied. Analysis of the optical absorption data showed that the rules of the non-direct transitions predominate. It was also found that the optical band gap decreases while the absorption coefficient, refractive index and extinction coefficient increase with increasing the annealing temperature. Due to the higher values of absorption coefficient and annealing dependence of the optical band gap and optical constants, the investigated material could be used for optical storage. - Highlights: Black-Right-Pointing-Pointer Annealing effect on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by x-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Thermal annealing causes a decrease in optical band gap in Ga{sub 10}Se{sub 81}Pb{sub 9} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non

  6. Effect of thermal annealing on structural properties of SrGa2S4:Ce thin films prepared by flash evaporation

    International Nuclear Information System (INIS)

    Gambarov, E.F.; Bayramov, A.I.

    2009-01-01

    In the present report the preparation technology and structural characterization of Ce 3 +activated SrGa 2 S 4 thin films are given. SrGa 2 S 4 : e thin films are prepared by so called flash evaporation which is simple and inexpensive method for thin film deposition. X-ray diffraction shows that the as deposited films exhibit amorphous behavior, but after annealing in H S stream, the polycrystalline one. EPMA results indicate nearly stoichiometric composition of the thin films

  7. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Yilbas, B.S., E-mail: bsyilbas@kfupm.edu.sa; Ali, H.

    2016-08-15

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  8. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    Science.gov (United States)

    Yilbas, B. S.; Ali, H.

    2016-08-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  9. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Chunfeng Lan

    2018-02-01

    Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

  10. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-01-01

    We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

  11. Enhanced Charge Extraction of Li-Doped TiO₂ for Efficient Thermal-Evaporated Sb₂S₃ Thin Film Solar Cells.

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-02-28

    We provided a new method to improve the efficiency of Sb₂S₃ thin film solar cells. The TiO₂ electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb₂S₃ solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO₂ films. Compared with the undoped TiO₂, Li-doped mesoporous TiO₂ dramatically improved the photo-voltaic performance of the thermal-evaporated Sb₂S₃ thin film solar cells, with the average power conversion efficiency ( PCE ) increasing from 1.79% to 4.03%, as well as the improved open-voltage ( V oc ), short-circuit current ( J sc ) and fill factors. The best device based on Li-doped TiO₂ achieved a power conversion efficiency up to 4.42% as well as a V oc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb₂S₃ solar cells. This study showed that Li-doping on TiO₂ can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb₂S₃-based solar cells.

  12. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    International Nuclear Information System (INIS)

    Yilbas, B.S.; Ali, H.

    2016-01-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  13. Temperature studies of optical parameters of (Ag3AsS3)0.6(As2S3)0.4 thin films prepared by rapid thermal evaporation and pulse laser deposition

    Science.gov (United States)

    Studenyak, I. P.; Kutsyk, M. M.; Buchuk, M. Yu.; Rati, Y. Y.; Neimet, Yu. Yu.; Izai, V. Yu.; Kökényesi, S.; Nemec, P.

    2016-02-01

    (Ag3AsS3)0.6(As2S3)0.4 thin films were deposited using rapid thermal evaporation (RTE) and pulse laser deposition (PLD) techniques. Ag-enriched micrometre-sized cones (RTE) and bubbles (PLD) were observed on the thin film surface. Optical transmission spectra of the thin films were studied in the temperature range 77-300 K. The Urbach behaviour of the optical absorption edge in the thin films due to strong electron-phonon interaction was observed, the main parameters of the Urbach absorption edge were determined. Temperature dependences of the energy position of the exponential absorption edge and the Urbach energy are well described in the Einstein model. Dispersion and temperature dependences of refractive indices were analysed; a non-linear increase of the refractive indices with temperature was revealed. Disordering processes in the thin films were studied and compared with bulk composites, the differences between the thin films prepared by RTE and PLD were analysed.

  14. Control of Nanoplane Orientation in voBN for High Thermal Anisotropy in a Dielectric Thin Film: A New Solution for Thermal Hotspot Mitigation in Electronics.

    Science.gov (United States)

    Cometto, Olivier; Samani, Majid K; Liu, Bo; Sun, Shuangxi; Tsang, Siu Hon; Liu, Johan; Zhou, Kun; Teo, Edwin H T

    2017-03-01

    High anisotropic thermal materials, which allow heat to dissipate in a preferential direction, are of interest as a prospective material for electronics as an effective thermal management solution for hot spots. However, due to their preferential heat propagation in the in-plane direction, the heat spreads laterally instead of vertically. This limitation makes these materials ineffective as the density of hot spots increases. Here, we produce a new dielectric thin film material at room temperature, named vertically ordered nanocrystalline h-BN (voBN). It is produced such that its preferential thermally conductive direction is aligned in the vertical axis, which facilitates direct thermal extraction, thereby addressing the increasing challenge of thermal crosstalk. The uniqueness of voBN comes from its h-BN nanocrystals where all their basal planes are aligned in the direction normal to the substrate plane. Using the 3ω method, we show that voBN exhibits high anisotropic thermal conductivity (TC) with a 16-fold difference between through-film TC and in-plane TC (respectively 4.26 and 0.26 W·m -1 ·K -1 ). Molecular dynamics simulations also concurred with the experimental data, showing that the origin of this anisotropic behavior is due to the nature of voBN's plane ordering. While the consistent vertical ordering provides an uninterrupted and preferred propagation path for phonons in the through-film direction, discontinuity in the lateral direction leads to a reduced in-plane TC. In addition, we also use COMSOL to simulate how the dielectric and thermal properties of voBN enable an increase in hot spot density up to 295% compared with SiO 2 , without any temperature increase.

  15. Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD

    Science.gov (United States)

    Lee, Yueh-Lin; Chuang, Jia-Hao; Huang, Tzu-Hsuan; Ho, Chong-Long; Wu, Meng-Chyi

    2013-03-01

    Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.

  16. Study of ytterbium doping effects on structural, mechanical and opto-thermal properties of sprayed ZnO thin films using the Boubaker Polynomials Expansion Scheme (BPES)

    Energy Technology Data Exchange (ETDEWEB)

    Amlouk, A. [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Boubaker, K., E-mail: mmbb11112000@yahoo.f [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Amlouk, M. [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Bouhafs, M. [Unite de Recherche MA2I, Ecole Nationale d' Ingenieurs de Tunis, B.P. 37 Le Belvedere, 1002 Tunis (Tunisia)

    2009-10-19

    In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(lambda) and reflectance R(lambda) spectra. Conjoint optical and thermal properties were deduced from the optical measurements in reference to the Amlouk-Boubaker opto-thermal expansivity psi{sub AB}. Optically relevant ytterbium doping effects have been discussed. Finally, mechanical measurements have been carried out using Vickers standard disposal. The results confirmed the structural and functional changes that several recent studies attributed to ytterbium doping.

  17. Effect of Mn content on structural, optical, opto-thermal and electrical properties of ZnO:Mn sprayed thin films compounds

    International Nuclear Information System (INIS)

    Mimouni, R.; Kamoun, O.; Yumak, A.; Mhamdi, A.; Boubaker, K.; Petkova, P.; Amlouk, M.

    2015-01-01

    Highlights: • Proposing an original explanation to the difference between manganese-doped zinc oxide and undoped behavior. • Presenting an original effective electrical and fluorescence-related calculation scheme. • Outlining original AC–DC investigation protocol. - Abstract: Manganese-doped zinc oxide thin films (ZnO:Mn) at different percentages (0–3%) were deposited on glass substrates using a chemical spray technique. The effects of manganese element content on structural, optical, opto-thermal and electrical conductivity of ZnO:Mn thin films were investigated by means of X-ray diffraction, optical measurement, Photoluminescence spectroscopy and impedance spectroscopy. XRD analysis revealed that all films consist of single phase ZnO and were well crystallized in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel to c-axis. Doping manganese resulted in a slight decrease in the optical band gap energy of the films and a noticeably change in optical constants. The UV peak positions for ZnO:Mn samples slightly red shift to the longer wavelength in comparison with the pure ZnO which can be attributed to the change in the acceptor level induced by the substitutional Mn 2+ and the band-gap narrowing of ZnO with the Mn dopant. We have performed original AC and DC conductivity studies inspired from Jonscher and small polaron models. These studies helped establishing significant correlation between temperature and activation energy and Mn content. From the spectroscopy impedance analysis we investigated the frequency relaxation phenomenon and the circuit equivalent circuit of such thin films. Finally, all results have been discussed, as an objective of the actual work, in terms of the manganese doping concentration

  18. Theoretical investigation of the thermodynamic properties of metallic thin films

    International Nuclear Information System (INIS)

    Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac

    2015-01-01

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

  19. Theoretical investigation of the thermodynamic properties of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  20. In-situ hybrid study of thermal behaviour of Znsbnd Ni and Znsbnd Nisbnd Al2O3 nanocrystallite thin films induced TEA/MEA by electrocodeposition

    Science.gov (United States)

    Abdulwahab, M.; Fayomi, O. S. I.; Popoola, A. P. I.; Dodo, M. R.

    Our present investigation focuses on the thermal stability of already developed electroforms of Znsbnd Ni and Znsbnd Nisbnd Al2O3 thin films induced with triethylamine (TEA) and monoethylamine (MEA) as surfactant by electrocodeposition on mild steel substrate with the aim to re-examine its micro-hardness and degradation behaviour in static sodium chloride solution. In the event, the samples were thermally treated at 200 °C and air cooled. The results obtained showed that the developed composites are thermally stable with hardness value of the Znsbnd Nisbnd Al2O3 coated; 185 Hv increased to 190.5 Hv indicating a 2.89% improvement. Noticeably, in the Znsbnd Ni coatings, a decrease in the hardness with 26.67% was observed. The oxidation resistance was however favored for both composites.

  1. Thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth (GREG) technique using photoacoustic methods

    International Nuclear Information System (INIS)

    Albor-Aguilera, M.L.; Gonzalez-Trujillo, M.A.; Cruz-Orea, A.; Tufino-Velazquez, M.

    2009-01-01

    In this work we report the study of the thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth technique. CdS films were grown on pyrex glass substrates. These studies were carried out using an open photoacoustic cell made out of an electret microphone. From X-ray diffraction, atomic force microscope and photoluminescence measurements we observed polycrystalline CdS films with good morphology and crystalline quality. We obtained a thermal diffusivity coefficient of our samples with values ranging from 3.15 to 3.89 x 10 -2 cm 2 /s. For comparison, we measured a value of 1.0 x 10 -2 cm 2 /s for the thermal diffusivity coefficient of a CdS single crystal. We measured an energy gap value of 2.42 eV for our samples by using a photoacoustic spectroscopy system

  2. Optical and thermal investigation of GeO2–PbO thin films doped with Au and Ag nanoparticles

    International Nuclear Information System (INIS)

    Carvalho, E.A.; Carmo, A.P.; Bell, M.J.V.; Anjos, V.; Kassab, L.R.P.; Silva, D.M. da

    2012-01-01

    The present work reports on the thermo-optical study of germanate thin films doped with Au and Ag nanoparticles. Transmission Electron Microscopy images, UV–visible absorption and Micro-Raman scattering evidenced the presence of nanoparticles and the formation of collective excitations, the so called surface plasmons. Moreover, the effects of the metallic nanoparticles in the thermal properties of the films were observed. The thermal lens technique was proposed to evaluate the Thermal Diffusivity (D) of the samples. It furnishes superficial spatial resolution of about 100 μm, so it is appropriate to study inhomogeneous samples. It is shown that D may change up to a factor 3 over the surface of a film because of the differences in the nanoparticles concentration distribution.

  3. Gas Control and Thermal Modeling Methods for Pressed Pellet and Fast Rise Thin-Film Thermal Batteries

    Science.gov (United States)

    2015-09-01

    high operating battery case temperatures. Acceptable hermetic seals for thermal batteries ordinarily use laser welding , tungsten inert gas ( TIG ...20 Fig. 16 Sierra TABS Internal Plotter – Final pre- processing step for Low Cost Competent Munition (LCCM) thermal battery (battery shown drawn to...of experimental and DOE statistical methods. Such studies could be used to identify 2 electrochemical and thermodynamic processes that occur

  4. High-performance thermal sensitive W-doped VO{sub 2}(B) thin film and its identification by first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Wan, Dongyun; Xiong, Ping; Chen, Lanli [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Shi, Siqi, E-mail: sqshi@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Ishaq, Ahmad [National Center for Physics, Quaid-I-Azam University, Islamabad 44000 (Pakistan); Luo, Hongjie [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Gao, Yanfeng, E-mail: yfgao@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China)

    2017-03-01

    Graphical abstract: VO{sub 2}(B) thin films with high TCR and suitable resistance were first achieved by W doping. The mechanism for performance improvement was studied by first-principles calculations. The two-dimensional octahedral structure of VO{sub 2}(B) favors the strain control with W-doping for achieving a large TCR, which overcomes the contradiction between the high conductivity and large TCR generated by dopants in VO{sub 2}(M). - Highlights: • High performance W-doped VO{sub 2}(B) thin films were first achieved by co-sputtering. • Mechanism for performance improvement was studied by first-principles calculations. • The two-dimensional octahedral structure of VO{sub 2} (B) favors the strain control. • Achieved VO{sub 2} films possess high thermal sensitivity (TCR: −3.9%/K & R{sub 0}: 32.7 kΩ). - Abstract: VO{sub 2}(B) is currently a preferred phase structure for the application as bolometer material, which, however, suffers from low temperature-coefficient-of-resistance (TCR) values and large resistances. Here we present the combined experimental and first-principles calculations study on both doped and undoped VO{sub 2}(B) thin films enabling us to attain high TCR (−3.9%/k) and suitable square-resistance (32.7 kΩ) by controlled W doping employing the widely used magnetron sputtering technique. The TCR value is 50% larger than reported ones at the similar resistance. The underlying microscopic mechanism for the performance improvement was studied and results indicated that the introduction of extra electrons and the variation in the band structure resulting from the incorporation of W{sup 6+} ions in the VO{sub 2}(B) crystal lattice contribute to the enhancement of the electronic conductivity. Moreover, the special two-dimensional octahedral structure of monoclinic (C2/m) B-phase VO{sub 2} favors the strain control with W-doping for achieving a large TCR, which overcomes the analogous predicament between the high conductivity and large TCR

  5. Modeling of thermal, electronic, hydrodynamic, and dynamic deposition processes for pulsed-laser deposition of thin films

    International Nuclear Information System (INIS)

    Liu, C.L.; LeBoeuf, J.N.; Wood, R.F.; Geohegan, D.B.; Donato, J.M.; Chen, K.R.; Puretzky, A.A.

    1994-11-01

    Various physical processes during laser ablation of solids for pulsed-laser deposition (PLD) are studied using a variety of computational techniques. In the course of the authors combined theoretical and experimental effort, they have been trying to work on as many aspects of PLD processes as possible, but with special focus on the following areas: (a) the effects of collisional interactions between the particles in the plume and in the background on the evolving flow field and on thin film growth, (b) interactions between the energetic particles and the growing thin films and their effects on film quality, (c) rapid phase transformations through the liquid and vapor phases under possibly nonequilibrium thermodynamic conditions induced by laser-solid interactions, (d) breakdown of the vapor into a plasma in the early stages of ablation through both electronic and photoionization processes, (c) hydrodynamic behavior of the vapor/plasma during and after ablation. The computational techniques used include finite difference (FD) methods, particle-in-cell model, and atomistic simulations using molecular dynamics (MD) techniques

  6. Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

    Directory of Open Access Journals (Sweden)

    James C. Moore

    2014-08-01

    Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

  7. Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

    Directory of Open Access Journals (Sweden)

    Chun-Yao Hsu

    2013-01-01

    Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.

  8. Two-stage crossover from thermal to quantum flux creep of dilute vortex ensembles in various high-T{sub c} superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akerman, Johan J.; Venturini, E. L.; Siegal, M. P.; Yun, S. H.; Karlsson, U. O.; Rao, K. V.

    2001-09-01

    The thermal-to-quantum flux creep crossover at low vortex densities has been studied in YBa{sub 2}Cu{sub 3}O{sub 7}, TlBa{sub 2}CaCu{sub 2}O{sub 7-{delta}}, and HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}} thin films using ac susceptibility. The crossover temperatures T{sub cr} are 10--11, 17, and 30 K, respectively. Both thermal and quantum flux creep is suppressed as the vortex density is decreased. We observe a two-stage nature in the crossover behavior which appears to be a general property of all the three materials studied.

  9. Synthesis, characterization, and thermal properties of homoleptic rare-earth guanidinates: promising precursors for MOCVD and ALD of rare-earth oxide thin films.

    Science.gov (United States)

    Milanov, Andrian P; Fischer, Roland A; Devi, Anjana

    2008-12-01

    Eight novel homoleptic tris-guanidinato complexes M[(N(i)Pr)(2)CNR(2)](3) [M = Y (a), Gd (b), Dy (c) and R = Me (1), Et (2), (i)Pr (3)] have been synthesized and characterized by NMR, CHN-analysis, mass spectrometry and infrared spectroscopy. Single crystal structure analysis revealed that all the compounds are monomers with the rare-earth metal center coordinated to six nitrogen atoms of the three chelating guanidinato ligands in a distorted trigonal prism geometry. With the use of TGA/DTA and isothermal TGA analysis, the thermal characteristics of all the complexes were studied in detail to evaluate their suitability as precursors for thin film deposition by MOCVD and ALD. The (i)Pr-Me(2)N-guanidinates of Y, Gd and Dy (1a-c) showed excellent thermal characteristics in terms of thermal stability and volatility. Additionally, the thermal stability of the (i)Pr-Me(2)N-guanidinates of Y and Dy (1a, c) in solution was investigated by carrying out NMR decomposition experiments and both the compounds were found to be remarkably stable. All these studies indicate that (i)Pr-Me(2)N-guanidinates of Y, Gd and Dy (1a-c) have the prerequisites for MOCVD and ALD applications which were confirmed by the successful deposition of Gd(2)O(3) and Dy(2)O(3) thin films on Si(100) substrates. The MOCVD grown films of Gd(2)O(3) and Dy(2)O(3) were highly oriented in the cubic phase, while the ALD grown films were amorphous.

  10. Advances in copper-chalcopyrite thin films for solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Kaneshiro, Jess; Gaillard, Nicolas; Rocheleau, Richard; Miller, Eric [Hawaii Natural Energy Institute, University of Hawaii at Manoa, 1680 East-West Road, Post 109, Honolulu, HI 96822 (United States)

    2010-01-15

    Promising alternatives to crystalline silicon as the basic building block of solar cells include copper-chalcopyrite thin films such as copper indium gallium diselenide, a class of thin films exhibiting bandgap-tunable semiconductor behavior, direct bandgaps and high absorption coefficients. These properties allow for the development of novel solar-energy conversion configurations like ultra-high efficiency multi-junction solar cells utilizing combinations of photovoltaic and photoelectrochemical junctions for hydrogen production. This paper discusses the current worldwide status as well as the development and optimization of copper-chalcopyrite thin films deposited onto various substrate types for different photovoltaic and photoelectrochemical applications at the Hawaii Natural Energy Institute. (author)

  11. Review of US Nanocorp - SNL Joint Development of Thermal-Sprayed Thin-Film Cathodes for Thermal Batteries

    Energy Technology Data Exchange (ETDEWEB)

    GUIDOTTI,RONALD A.; REINHARDT,FREDERICK W.; DAI,JINXIANG; XIAO,T. DANNY; REISNER,DAVID E.

    2000-11-14

    The use of plasma spray to deposit thin metal-sulfide cathode films is described in this paper. Conventional electroactive stack components in thermal batteries are constructed from pressed-powder parts that are difficult to fabricate in large diameters in thicknesses <0.010. Plasma-sprayed electrodes do not steer from this difficulty, allowing greater energy densities and specific energies to be realized. Various co-spraying agents have been found suitable for improving the mechanical as well as electrochemical properties of plasma-sprayed cathodes for thermal batteries. These electrodes generally show equal or improved performance over conventional pressed-powder electrodes. A number of areas for future growth and development of plasma-spray technology is discussed.

  12. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  13. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  14. Impact of additional sulphur on structure, morphology and optical properties of SnS thin films by thermal evaporation

    Science.gov (United States)

    Banotra, Arun; Padha, Naresh; Kumar, Shiv; Kapoor, Ashok K.

    2018-05-01

    Thin films of SnS have been obtained from Sn and S powders which were mixed up using ball mill technique with and without evaporating additional sulphur prior to annealing at 523K. The obtained samples were taken for structural, optical, chemical and morphological studies. The X-ray diffraction reveals the formation of SnS phase on annealing in vacuum having S/Sn ratio of 0.67 obtained from EDAX. This deficit in `S' is removed by supplementing additional `S' of 200nm prior to annealing which results in the S/Sn ratio of 1.01. The optical transmission recorded from spectrophotometer used to study different optical parameters. Morphological results corroborate well with the XRD, EDAX and optical study. The obtained stoichiometric films were also tested for Ag/p-SnS Schottky diodes on In coated glass substrates using current voltage measurements.

  15. High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.

    Science.gov (United States)

    Benwadih, M; Coppard, R; Bonrad, K; Klyszcz, A; Vuillaume, D

    2016-12-21

    Amorphous, sol-gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm 2 /(V s), as well as a mobility of 7 cm 2 /(V s) on solid substrate (Si/SiO 2 ) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol-gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.

  16. Post-deposition thermal treatment of sprayed ZnO:Al thin films for enhancing the conductivity

    Science.gov (United States)

    Devasia, Sebin; Athma, P. V.; Shaji, Manu; Kumar, M. C. Santhosh; Anila, E. I.

    2018-03-01

    Here, we report the enhanced conductivity of Aluminium doped (2at.%) zinc oxide thin films prepared by simple spray pyrolysis technique. The structural, optical, electrical, morphological and compositional investigations confirm the better quality of films that can be a potential candidate for application in transparent electronics. Most importantly, the film demonstrates an average transmittance of 90 percent with a low resistivity value which was dropped from 1.39 × 10-2 to 5.10 × 10-3 Ω .cm, after annealing, and a very high carrier concentration in the order of 10 × 20cm-3. Further, we have used the Swanepoel envelop method to calculate thickness, refractive index and extinction coefficient from the interference patterns observed in the transmission spectra. The calculated figure of merit of the as-deposited sample was 1.4 × 10-3Ω-1 which was improved to 2.5 × 10-3Ω-1 after annealing.

  17. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  18. NMR characterization of thin films

    Science.gov (United States)

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  19. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  20. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    International Nuclear Information System (INIS)

    Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

    2009-01-01

    Dielectric properties of Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  1. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    Science.gov (United States)

    Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

    2009-07-01

    Dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  2. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    Energy Technology Data Exchange (ETDEWEB)

    Niang, K. M.; Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Barquinha, P. M. C.; Martins, R. F. P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Cobb, B. [Holst Centre/TNO, High Tech Campus 31, 5656AE Eindhoven (Netherlands); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

    2016-02-29

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  3. Comparison of Ultrasonic Welding and Thermal Bonding for the Integration of Thin Film Metal Electrodes in Injection Molded Polymeric Lab-on-Chip Systems for Electrochemistry

    Directory of Open Access Journals (Sweden)

    Marco Matteucci

    2016-10-01

    Full Text Available We compare ultrasonic welding (UW and thermal bonding (TB for the integration of embedded thin-film gold electrodes for electrochemical applications in injection molded (IM microfluidic chips. The UW bonded chips showed a significantly superior electrochemical performance compared to the ones obtained using TB. Parameters such as metal thickness of electrodes, depth of electrode embedding, delivered power, and height of energy directors (for UW, as well as pressure and temperature (for TB, were systematically studied to evaluate the two bonding methods and requirements for optimal electrochemical performance. The presented technology is intended for easy and effective integration of polymeric Lab-on-Chip systems to encourage their use in research, commercialization and education.

  4. Preparation and properties of thin films treatise on materials science and technology

    CERN Document Server

    Tu, K N

    1982-01-01

    Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properti

  5. Measurement of thermal conductance of La0.7Sr0.3MnO3 thin films deposited on SrTiO3 and MgO substrates

    Science.gov (United States)

    Aryan, A.; Guillet, B.; Routoure, J. M.; Fur, C.; Langlois, P.; Méchin, L.

    2015-01-01

    We present measurements of the thermal conductance of thin-film-on-substrate structures that could serve as thin film uncooled bolometers. Studied samples were 75 nm thick epitaxial La0.7Sr0.3MnO3 thin films deposited on SrTiO3 (0 0 1) and MgO (0 0 1) substrates patterned in square geometries of areas ranging from 50 μm × 50 μm to 200 μm × 200 μm. The model allows estimating thermal boundary conductance values at the interface between film and substrate of 0.28 ± 0.08 × 106 W K-1 m-2 for LSMO/STO (0 0 1) and 5.8 ± 3.0 × 106 W K-1 m-2 for LSMO/MgO (0 0 1) from measurements performed in the static regime. Analytical expressions of thermal conductance and thermal capacitance versus modulation frequency are compared to measurements of the elevation temperature due to absorbed incoming optical power. The overall good agreement found between measurements and model finally provides the possibility to calculate the bolometric response of thin film bolometers, thus predicting their frequency response for various geometries.

  6. Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser

    Directory of Open Access Journals (Sweden)

    Dyi-Cheng Chen

    2014-07-01

    Full Text Available This study used ANSYS simulation software for analyzing an ultraviolet (UV (355 nm laser processing system. The laser apparatus was used in a stainless steel CIGS solar cell P2 layer for simulation analysis. CIGS films process order according to SiO2 layer, molybdenum electrode, CIGS absorbed layer, CdS buffered layer, i-ZnO penetrate light layer, TCO front electrode, MgF resist reflected materials, andelectrode materials. The simulation and experimental results were compared to obtain a laser-delineated P2 laser with a low melting and vaporization temperature. According to the simulation results, the laser function time was 135 μs, the UV laser was 0.5 W, and the P2 layer thin films were removed. The experimental results indicated that the electrode pattern of the experiment was similar to that of the simulation result, and the laser process did not damage the base plate. The analysis results confirm that the laser apparatus is effective when applied to a stainless steel CIGS solar cell P2 layer.

  7. Thermal annealing evolution to physical properties of ZnS thin films as buffer layer for solar cell applications

    Science.gov (United States)

    Kaushalya; Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

    2018-07-01

    The conventional CdS window layer in solar cells is found to be hazardous for the environment due to toxic nature of the cadmium. Therefore, in order to seek an alternative, a study on effect of post-annealing treatment on physical properties of e-beam evaporated ZnS thin films has been carried out where films of thickness 150 nm were deposited on glass and indium tin oxide (ITO) substrates. The post annealing treatment was performed in air atmosphere within the temperature range from 100 °C to 500 °C. X-ray diffraction analysis reveals that the films on glass substrate are found to be amorphous at low temperature annealing (≤300 °C) while have α-ZnS hexagonal phase (wurtzite structure) at higher annealing. The patterns also show that the possibility of oxidation is increased significantly at temperature 500 °C which leads to decrease in direct band gap from 3.28 eV to 3.18 eV except films annealed at 300 °C (i.e. 3.39 eV). The maximum transmittance is found about 95% as a result of Doppler blue shift while electrical analysis indicated almost ohmic behavior between current and voltage and surface roughness is increased with post-annealing treatment.

  8. Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

    International Nuclear Information System (INIS)

    Wong, Yew Hoong; Cheong, Kuan Yew

    2012-01-01

    A systematic investigation on the structural, chemical, and electrical properties of thermally oxidized and nitrided sputtered Zr thin film in various N 2 O ambient (10–100%) at 500 °C for 15 min to form Zr-oxynitride on 4H–SiC substrate has been carried out. The chemical composition, depth profile analysis, and energy band alignment have been evaluated by X-ray photoelectron spectrometer. Zr-oxynitride layer and its interfacial layer comprised of compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N were identified. A model related to the oxidation and nitridation mechanism has been suggested. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, and Raman analyses. A proposed crystal structure was employed to elucidate the surface roughness and topographies of the samples, which were characterized by atomic force microscopy. The electrical results revealed that 10% N 2 O sample has possessed the highest breakdown field and reliability. This was owing to the confinement of nitrogen-related compounds of Zr–O–N and/or Zr–N at or near interfacial layer region, smaller grain with finer structure on the surface, the lowest interface trap density, total interface trap density, and effective oxide charge, and highest barrier height between conduction band edge of oxide and semiconductor. -- Highlights: ► Zr-oxynitride as the gate oxide deposited on 4H–SiC substrate. ► Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H–SiC using various concentrations of N 2 O gas. ► Presence of interfacial layer comprised of mixed compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N. ► The highest electrical breakdown and highest reliability at diluted N 2 O of 10%.

  9. Thermal conductivity in Pr{sub 1-x}Ca{sub x}MnO{sub 3} and SrTiO{sub 3} thin film systems

    Energy Technology Data Exchange (ETDEWEB)

    Wiedigen, Stefanie; Kramer, Thilo; Mangipudi, Kodanda R.; Hoffmann, Joerg; Volkert, Cynthia A.; Jooss, Christian [Institute for Materials Physics, University of Goettingen (Germany); Feuchter, Manuel; Kamlah, Marc [Institute for Applied Materials, Karlsruhe Institute of Technology (Germany)

    2012-07-01

    Epitaxial multilayers and superlattices are one recent approach for the design of efficient thermoelectrics. To study the effect of phonon blocking and scattering on thermal conductivity of oxide multilayers, a combination of two perovskites with promising thermoelectric properties is selected: the orthorhombic Pr{sub 1-x}Ca{sub x}MnO{sub 3} and the cubic SrTiO{sub 3}. In order to investigate the effect of microstructure, interfaces and acoustic impedance mismatch on thermal conductivity {kappa} high preparation quality is needed. Our thin films were prepared by ion-beam and magnetron sputtering. Structural analysis is done by XRD and TEM and is presented in combination with thermal conductivity measurements using the 3{omega} method. Single layers of Pr{sub 1-x}Ca{sub x}MnO{sub 3} show low {kappa} values and no significant increase of thermal conductivity with increasing doping. In homoepitaxial single layers of SrTiO{sub 3} preparation conditions have a high impact on {kappa}, most probably due to different concentrations of point defects. Pr{sub 1-x}Ca{sub x}MnO{sub 3}/SrTiO{sub 3} multilayers show a {kappa} decreases systematically with increasing number of double layers. The results are discussed in the light of the theoretically calculated phonon dispersion and the experimentally observed microstructure.

  10. Synthesis and electrical characterization of low-temperature thermal-cured epoxy resin/functionalized silica hybrid-thin films for application as gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Na, Moonkyong, E-mail: nmk@keri.re.kr [HVDC Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of); System on Chip Chemical Process Research Center, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784 (Korea, Republic of); Kang, Young Taec [Creative and Fundamental Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of); Department of Polymer Science and Engineering, Pusan National University, Busan, 609-735 (Korea, Republic of); Kim, Sang Cheol [HVDC Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of); Kim, Eun Dong [Creative and Fundamental Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of)

    2013-07-31

    Thermal-cured hybrid materials were synthesized from homogenous hybrid sols of epoxy resins and organoalkoxysilane-functionalized silica. The chemical structures of raw materials and obtained hybrid materials were characterized using Fourier transform infrared spectroscopy. The thermal resistance of the hybrids was enhanced by hybridization. The interaction between epoxy matrix and the silica particles, which caused hydrogen bonding and van der Waals force was strengthened by organoalkoxysilane. The degradation temperature of the hybrids was improved by approximately 30 °C over that of the parent epoxy material. The hybrid materials were formed into uniformly coated thin films of about 50 nm-thick using a spin coater. An optimum mixing ratio was used to form smooth-surfaced hybrid films. The electrical property of the hybrid film was characterized, and the leakage current was found to be well below 10{sup −6} A cm{sup −2}. - Highlights: • Preparation of thermal-curable hybrid materials using epoxy resin and silica. • The thermal stability was enhanced through hybridization. • The insulation property of hybrid film was investigated as gate dielectrics.

  11. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  12. A comparative study of the physical properties of Sb{sub 2}S{sub 3} thin films treated with N{sub 2} AC plasma and thermal annealing in N{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M., E-mail: manuela@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Martinez, H. [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Pena, Y. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba s/n, Cd. Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Flores, O. [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Esparza-Ponce, H.E. [Centro de Investigacion en Materiales Avanzados S.C., Laboratorio Nacional de Nanotecnologia, Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, Chihuahua 31109 (Mexico); Sanchez-Juarez, A.; Campos-Alvarez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n, Col. Centro, 62580, Temixco, Morelos (Mexico); Reyes, P. [Facultad de Ciencias, Departamento de Fisica, Universidad Autonoma del Estado de Mexico, Instituto Literario 100, Col. Centro, 50000, Toluca, Estado de Mexico (Mexico)

    2010-02-01

    As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb{sub 2}S{sub 3} thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E{sub g}) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb{sub 2}S{sub 3} thin films decreased from 10{sup 8} to 10{sup 6} {Omega}-cm after plasma treatments.

  13. Effect of Hf underlayer on structure and magnetic properties of rapid thermal annealed FePt thin films

    International Nuclear Information System (INIS)

    Shen, C.Y.; Yuan, F.T.; Chang, H.W.; Lin, M.C.; Su, C.C.; Chang, S.T.; Wang, C.R.; Mei, J.K.; Hsiao, S.N.; Chen, C.C.; Shih, C.W.; Chang, W.C.

    2014-01-01

    FePt(20 nm) and FePt(20 nm)/Hf(10 nm) thin films prepared on the glass substrates by sputtering and post annealing are studied. For both samples, the as deposited films are disordered and L1 0 -ordering is triggered by a 400 °C-annealing. At T a ≥600 °C, Hf–Pt intermetallic compound forms with increasing T a , which consumes Pt in FePt layer and results in the formation of Fe 3 Pt phase. The film becomes soft magnetic at T a =800 °C. The optimized condition of FePt/Hf film is in the T a range of 500 to 600 °C where the interdiffusion between Hf and FePt layer is not extensive. The value of H c is 8.9 kOe and M r is 650–670 emu/cm 3 . Unlike FePt films, the Hf-undelayered samples show significantly reduced out-of-plane remanent and coercivity. The values for both are around 50% smaller than that of the FePt films. Additionally, Hf underlayer markedly reduces the FePt grain size and narrows the distribution, which enhances magnetic intergrain coupling. Good in-plane magnetic properties are preferred for the uses like a hard biasing magnet in a spintronic device. - Highlights: • Effect of Hf underlayer on structure and magnetic properties of FePt films are studied. • Hf underlayer reduces size, narrows the distribution of grains and thus enhances intergrain coupling. • Higher T a ≥600 °C makes Hf–Pt intermetallic compound and thus Fe 3 Pt phase form. • Good in-plane magnetic property is proper for uses in hard biasing magnet in spintronic devices

  14. Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

    International Nuclear Information System (INIS)

    Su, Bo-Yuan; Chu, Sheng-Yuan; Juang, Yung-Der; Liu, Ssu-Yin

    2013-01-01

    Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm 2 /V s and an on–off current ratio over 10 6 . •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm 2 /V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm 2 /V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10 6 . Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films

  15. Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

    2017-04-15

    Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

  16. Tungsten oxide thin film exposed to low energy D and He plasma: evidence for a thermal enhancement of the erosion yield

    Science.gov (United States)

    Hijazi, Hussein; Martin, C.; Roubin, P.; Addab, Y.; Cabie, C.; Pardanaud, C.; Bannister, M.; Meyer, F.

    2017-10-01

    Nanocrystalline tungsten oxide thin films (25 nm - 250 nm thickness) produced by thermal oxidation of a tungsten substrate were exposed to low energy D and He plasma. Low energy D plasma exposure (11 eV/D+) of these films have resulted in the formation of a tungsten bronze (DxWO3) clearly observed by Raman microscopy. D plasma bombardment (4 1021 m-2) has also induced a color change of the oxide layer which is similar to the well-known electro-chromic effect and has been named ``plasma-chromic effect''. To unravel physical and chemical origins of the modifications observed under exposure, similar tungsten oxide films were also exposed to low energy helium plasma (20 eV/He+) . Due to the low fluence (4 1021 m-2) and low ion energy (20 eV), at room temperature, He exposure has induced only very few morphological and structural modifications. On the contrary, at 673 K, significant erosion is observed, which gives evidence for an unexpected thermal enhancement of the erosion yield. We present here new results concerning He beam exposures at low fluence (4 1021 m-2) varying the He+ energy from 20 eV to 320 eV to measure the tungsten oxide sputtering threshold energy. Detailed analyses before/after exposure to describe the D and He interaction with the oxide layer, its erosion and structural modification at the atomic and micrometer scale will be presented.

  17. Synthesis, structure and optical properties of thin films form GeS2-In2S3 system deposited by thermal co-evaporation

    Czech Academy of Sciences Publication Activity Database

    Todorov, R.; Petkov, K.; Kincl, Miloslav; Černošková, E.; Vlček, Milan; Tichý, Ladislav

    2014-01-01

    Roč. 558, 2 May (2014), s. 298-305 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : chalcogenide glasses * thin films * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 1.759, year: 2014

  18. Microstructure of Thin Films

    Science.gov (United States)

    1990-02-07

    Proceedings, Thin film Technologies II, 652, 256-263, (1986) B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier, "In situ and air index measurements...34 SPIE Proceedings, "Optical Components and Systems", 805, 128 (1987) 11 B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier. "In situ and air index...aT , m..a, lot,, o ,,f,02,d I4 k -1-1..... autocovariance lengths, less than 0.5 um, indicate that , 514n, ob0 o p’,Ofclllc....,,o,,oy0,1- agua sblrt

  19. Superconducting oxypnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

    2012-07-01

    We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.

  20. Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H-SiC in diluted N{sub 2}O ambient

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Yew Hoong [Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia); Cheong, Kuan Yew, E-mail: cheong@eng.usm.my [Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia)

    2012-10-15

    A systematic investigation on the structural, chemical, and electrical properties of thermally oxidized and nitrided sputtered Zr thin film in various N{sub 2}O ambient (10-100%) at 500 Degree-Sign C for 15 min to form Zr-oxynitride on 4H-SiC substrate has been carried out. The chemical composition, depth profile analysis, and energy band alignment have been evaluated by X-ray photoelectron spectrometer. Zr-oxynitride layer and its interfacial layer comprised of compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N were identified. A model related to the oxidation and nitridation mechanism has been suggested. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, and Raman analyses. A proposed crystal structure was employed to elucidate the surface roughness and topographies of the samples, which were characterized by atomic force microscopy. The electrical results revealed that 10% N{sub 2}O sample has possessed the highest breakdown field and reliability. This was owing to the confinement of nitrogen-related compounds of Zr-O-N and/or Zr-N at or near interfacial layer region, smaller grain with finer structure on the surface, the lowest interface trap density, total interface trap density, and effective oxide charge, and highest barrier height between conduction band edge of oxide and semiconductor. -- Highlights: Black-Right-Pointing-Pointer Zr-oxynitride as the gate oxide deposited on 4H-SiC substrate. Black-Right-Pointing-Pointer Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H-SiC using various concentrations of N{sub 2}O gas. Black-Right-Pointing-Pointer Presence of interfacial layer comprised of mixed compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N. Black-Right-Pointing-Pointer The highest electrical breakdown and highest reliability at diluted N{sub 2}O of 10%.

  1. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Jingjin Wu

    2016-08-01

    Full Text Available The 4 at. % zirconium-doped zinc oxide (ZnO:Zr films grown by atomic layer deposition (ALD were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  2. The effect of thermal annealing on the optical band gap of cadmium sulphide thin films, prepared by the chemical bath deposition technique

    International Nuclear Information System (INIS)

    Ampong, F. K.; Boakye, F.; Asare Donkor, N. K.

    2010-01-01

    Cadmium sulphide thin films have been prepared by the chemical bath deposition technique (ph 11, 70 degree centigrade). Two different sets of films were prepared under varied conditions and concentrations of their ions sources (Cd 2+ from cadmium nitrate, S 2- from thiourea) and Na 2 EDTA as a complexing agent. A UV mini-Schimazu UV-VIS Spectrophotometer was used to determine the optical absorbance of the films as a function of wavelength at room temperature over the wavelength range 200 - 600 nm. The samples were then thermally annealed for thirty minutes, at temperatures of 100 degree centigrade, and 200 degree centigrade, after which the absorbance of the films were again recorded. The band gap values obtained for the sample with 0.5 M CdS as deposited, annealed at 100 degree centigrade and 200 degree centigrade were 2.1 eV, 2.2 eV and 2.3 eV respectively. Whilst the values obtained for the sample 0.15 CdS as deposited, annealed at 100 degree centigrade and annealed at 200 degree centigrade were 2.0 eV, 2.01 eV and 2.02 eV respectively. The increase in band gap with annealing temperature might be attributed to the improvement in crystallinity in the films. (au)

  3. Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

    Science.gov (United States)

    Takase, Ryohei; Ishimaru, Manabu; Uchida, Noriyuki; Maeda, Tatsuro; Sato, Kazuhisa; Lieten, Ruben R.; Locquet, Jean-Pierre

    2016-12-01

    Thermally induced crystallization processes for amorphous GeSn thin films with Sn concentrations beyond the solubility limit of the bulk crystal Ge-Sn binary system have been examined by X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, and (scanning) transmission electron microscopy. We paid special attention to the behavior of Sn before and after recrystallization. In the as-deposited specimens, Sn atoms were homogeneously distributed in an amorphous matrix. Prior to crystallization, an amorphous-to-amorphous phase transformation associated with the rearrangement of Sn atoms was observed during heat treatment; this transformation is reversible with respect to temperature. Remarkable recrystallization occurred at temperatures above 400 °C, and Sn atoms were ejected from the crystallized GeSn matrix. The segregation of Sn became more pronounced with increasing annealing temperature, and the ejected Sn existed as a liquid phase. It was found that the molten Sn remains as a supercooled liquid below the eutectic temperature of the Ge-Sn binary system during the cooling process, and finally, β-Sn precipitates were formed at ambient temperature.

  4. Thermally activated dissipation and critical field Hc2 in c-oriented high-Tc Bi-Pb-Sr-Ca-Cu-O thin film

    International Nuclear Information System (INIS)

    Wang, Y.H.; Cui, C.G.; Zhang, Y.Z.; Li, S.L.; Li, J.; Li, L.

    1991-01-01

    A set of resistivity-temperature (R-T) curves measured under various applied fields in a high-T c Bi-Pb-Sr-Ca-Cu-O thin film which has a zero-resistance temperature T c0 of 110 K is reported. The remarkable broadening of the transition width is discussed under the flux-creep model, considering the very short coherence length of this oxide superconductor. The resistivity is thermally activated, which is consistent with the Arrhenius law with a magnetic field and orientation-dependent activation energy U 0 (H,Θ). The U 0 (H,Θ) has a very high value of 381.6 meV under a field of 0.1 T parallel to the c axis. The upper critical field H c2 determined from these R-T curves shows high values and the effect of flux creep to the H c2 (0) is examined by the irreversible behavior with the ''giant'' flux-creep model

  5. Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Su, Bo-Yuan [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Juang, Yung-Der [Department of Materials Science, National University of Tainan, Tainan 700, Taiwan (China); Liu, Ssu-Yin [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2013-12-15

    Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm{sup 2}/V s and an on–off current ratio over 10{sup 6}. •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm{sup 2}/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm{sup 2}/V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10{sup 6}. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.

  6. Thin films: Past, present, future

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K

    1995-04-01

    This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

  7. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  8. Thin-film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  9. XRay Study of Transfer Printed Pentacene Thin Films

    International Nuclear Information System (INIS)

    Shao, Y.; Solin, S. A.; Hines, D. R.; Williams, E. D.

    2007-01-01

    We investigated the structural properties and transfer properties of pentacene thin films fabricated by thermal deposition and transfer printing onto SiO2 and plastic substrates, respectively. The dependence of the crystallite size on the printing time, temperature and pressure were measured. The increases of crystalline size were observed when pentacene thin films were printed under specific conditions, e.g. 120 deg. C and 600 psi and can be correlated with the improvement of the field effect mobility of pentacene thin-film transistors

  10. Synthesis, structure and optical properties of thin films from GeS{sub 2}–In{sub 2}S{sub 3} system deposited by thermal co-evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Todorov, R., E-mail: rossen@iomt.bas.bg [Institute of Optical Materials and Technologies “Acad. J. Malinowski”, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Petkov, K. [Institute of Optical Materials and Technologies “Acad. J. Malinowski”, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Kincl, M. [Institute of Macromolecular Chemistry of Czech Academy of Science, Heyrovsky sq. 2, 162 06 Prague 6 (Czech Republic); Černošková, E. [Faculty of Chemical Technology, University of Pardubice, Studentská 84, 532 10 Pardubice (Czech Republic); Vlček, Mil.; Tichý, L. [Institute of Macromolecular Chemistry of Czech Academy of Science, Heyrovsky sq. 2, 162 06 Prague 6 (Czech Republic)

    2014-05-02

    This paper deals with the properties of the glasses and thin films from multi-component chalcogenide prepared by co-evaporation technique. The thin chalcogenide layers from GeS{sub 2}–In{sub 2}S{sub 3} system were deposited by thermal co-evaporation of GeS{sub 2} and In{sub 2}S{sub 3}. Using X-ray microanalysis it was found that the film compositions are closed to the expected ones. X-ray diffraction analysis shows that the thin films deposited by co-evaporation are amorphous. The refractive index, n and the optical band gap, E{sub g}{sup opt} were calculated from the transmittance and reflectance spectra. The thin film's structure was investigated by infrared spectroscopy. It was found that the photo-induced optical changes decrease with increase of indium content while significant thermo-induced changes in the optical properties and structure were observed at 14 at.% indium. The infrared spectra demonstrated high transmittance of the thin films in the range 4000–500 cm{sup −1}. The far-infrared spectra indicated that the indium participates in the glass network of the layers from Ge–S–In system in four coordinated InS{sub 4/2}{sup −} tetrahedral and six-coordinated InS{sub 6/2}{sup 3−} octahedral units. The changes in infrared spectra after annealing of the thin films evidence an increase of population of ethane-like S{sub 3}Ge–GeS{sub 3} units and/or structural or phase change of indium contain units. - Highlights: • The thin layers from GeS{sub 2}–In{sub 2}S{sub 3} system were deposited by thermal co-evaporation. • The photo-induced optical changes decrease with increase of indium content. • The thermo-induced changes in the optical properties and structure were investigated. • The structure of the thin films was investigated by infrared spectroscopy.

  11. Portable low-power thermal cycler with dual thin-film Pt heaters for a polymeric PCR chip.

    Science.gov (United States)

    Jeong, Sangdo; Lim, Juhun; Kim, Mi-Young; Yeom, JiHye; Cho, Hyunmin; Lee, Hyunjung; Shin, Yong-Beom; Lee, Jong-Hyun

    2018-01-29

    Polymerase chain reaction (PCR) has been widely used for major definite diagnostic tool, but very limited its place used only indoor such as hospital or diagnosis lab. For the rapid on-site detection of pathogen in an outdoor environment, a low-power cordless polymerase chain reaction (PCR) thermal cycler is crucial module. At this point of view, we proposed a low-power PCR thermal cycler that could be operated in an outdoor anywhere. The disposable PCR chip was made of a polymeric (PI/PET) film to reduce the thermal mass. A dual arrangement of the Pt heaters, which were positioned on the top and bottom of the PCR chip, improved the temperature uniformity. The temperature sensor, which was made of the same material as the heater, utilized the temperature dependence of the Pt resistor to ensure simple fabrication of the temperature sensor. Cooling the PCR chip using dual blower fans enabled thermal cycling to operate with a lower power than that of a Peltier element with a high power consumption. The PCR components were electrically connected to a control module that could be operated with a Li-ion battery (12 V), and the PCR conditions (temperature, time, cycle, etc.) were inputted on a touch screen. For 30 PCR cycles, the accumulated power consumption of heating and cooling was 7.3 Wh, which is easily available from a compact battery. Escherichia coli genomic DNA (510 bp) was amplified using the proposed PCR thermal cycler and the disposable PCR chip. A similar DNA amplification capability was confirmed using the proposed portable and low-power thermal cycler compared with a conventional thermal cycler.

  12. A simple model for the prediction of thermal conductivity of Ge2Sb2Te5 thin film

    International Nuclear Information System (INIS)

    Jin, Jae Sik

    2013-01-01

    A modified version of the Mayadas-Shatzkes (MS) model is proposed for the prediction of the thermal conductivity of both amorphous and crystalline of Ge 2 Sb 2 Te 5 (GST) phase-change materials at room temperature. The structural parameters of the original MS model are extended to describe the additional disorder scattering effects caused by the ternary components of the GST. The effect of disorder due to the alloy composition on the grain boundary scattering can be interpreted with the aid of thermal models. It is also found that for all phases of GST, the contribution of disorder scattering to the thermal resistance is nearly uniform. This is consistent with the fact that the GST phase changes without any destruction of the structural basis such as the building blocks.

  13. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  14. Study of structural and morphological properties of thermally evaporated Sn{sub 2}Sb{sub 6}S{sub 11} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Mehrez, N., E-mail: najia.benmehrez@gmail.com [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Khemiri, N. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Kanzari, M. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Institut Préparatoire aux Etudes d’Ingénieurs de Tunis Montfleury, Université de Tunis (Tunisia)

    2016-10-01

    In this study, we report the structural and morphological properties of the new material Sn{sub 2}Sb{sub 6}S{sub 11} thin films prepared on glass substrates by vacuum thermal evaporation at various substrate temperatures (30, 60, 100, 140, 180 and 200 °C). Sn{sub 2}Sb{sub 6}S{sub 11} ingot was synthesized by the horizontal Bridgman technique. The structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The films were characterized for their structural properties by using XRD. All films were polycrystalline in nature. The variations of the structural parameters of the films with the substrate temperature were investigated. The results show that the crystallite sizes increase as the substrate temperature increases. The morphological properties of the films were analyzed by atomic force microscopy (AFM). The roughness and the topography of the surface of the films strongly depend on the substrate temperature. - Highlights: • Sn{sub 2}Sb{sub 6}S{sub 11} powder was successfully synthesized by the horizontal Bridgman technique. • Sn{sub 2}Sb{sub 6}S{sub 11} films were grown by thermal evaporation at different substrate temperatures. • Structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were investigated. • The effect of the substrate temperature on structural and morphological of Sn{sub 2}Sb{sub 6}S{sub 11} films properties was studied.

  15. Room temperature ferroelectricity in continuous croconic acid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  16. Enhanced coercivity thermal stability realized in Nd–Fe–B thin films diffusion-processed by Nd–Co alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Hui; Fu, Yanqing [Key laboratory of electromagnetic processing of materials (EPM), Ministry of Education, Northeastern University, Shenyang 110819 (China); Department of Physics and Chemistry of Materials, School of Materials Science and Engineering, Northeastern University, Shenyang 110819 (China); Li, Guojian; Liu, Tie [Key laboratory of electromagnetic processing of materials (EPM), Ministry of Education, Northeastern University, Shenyang 110819 (China); Cui, Weibin, E-mail: cuiweibin@epm.neu.edu.cn [Key laboratory of electromagnetic processing of materials (EPM), Ministry of Education, Northeastern University, Shenyang 110819 (China); Department of Physics and Chemistry of Materials, School of Materials Science and Engineering, Northeastern University, Shenyang 110819 (China); Liu, Wei; Zhang, Zhidong [Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), Shenyang 110016 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key laboratory of electromagnetic processing of materials (EPM), Ministry of Education, Northeastern University, Shenyang 110819 (China)

    2017-03-15

    A proposed Nd{sub 2}Fe{sub 14}B-core/Nd{sub 2}(Fe, Co){sub 14}B-shell microstructure was realized by diffusion-processing textured Nd{sub 14}Fe{sub 77}B{sub 9} single-layer film with Nd{sub 100−x}Co{sub x} (x=10, 20 and 40) alloys to improve the coercivity thermal stability. The ambient coercivity was increased from around 1 T in single-layer film to nearly 2 T in diffusion-processed films, which was due to the Nd-rich grain boundaries as seen from transmission electron microscopy (TEM) images. The coercivity thermal stability was improved by the core/shell microstructure because Nd-rich grain boundaries provided the high ambient coercivity and Co-rich shell provided the improved coercivity stability. - Highlights: • Core–shell microstructure proposed for enhancing the coercivity thermal stability. • Coercivity enhanced to nearly 2 T by diffusion-processing with Nd–Co alloy. • Good squareness and highly textured microstructure obtained. • Nd-rich phases observed by TEM after diffusion process. • Coercivity thermal stability improved with minor Co addition in grain boundary regions.

  17. Thin film coatings for space electrical power system applications

    Science.gov (United States)

    Gulino, Daniel A.

    1988-01-01

    This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

  18. Experimental determination of thermal conductivities of dielectric thin films; Determination experimentale des conductivites thermiques de couches minces dielectriques

    Energy Technology Data Exchange (ETDEWEB)

    Scudeller, Y.; Hmina, N.; Lahmar, J.; Bardon, J.P. [Nantes Univ., 44 (France)

    1996-12-31

    This paper presents a method of measurement of thermal conductivity of sub-micron dielectric films in a direction perpendicular to the substrate. These films (oxides, nitrides, diamond..) are mainly used for the electrical insulation of semiconductor circuits and in optical treatments of high energy lasers. The principle of the method used and the experimental device are described. The results obtained with silicon oxides are discussed. (J.S.) 13 refs.

  19. Detection of impact damage on thermal protection systems using thin-film piezoelectric sensors for integrated structural health monitoring

    Science.gov (United States)

    Na, Jeong K.; Kuhr, Samuel J.; Jata, Kumar V.

    2008-03-01

    Thermal Protection Systems (TPS) can be subjected to impact damage during flight and/or during ground maintenance and/or repair. AFRL/RXLP is developing a reliable and robust on-board sensing/monitoring capability for next generation thermal protection systems to detect and assess impact damage. This study was focused on two classes of metallic thermal protection tiles to determine threshold for impact damage and develop sensing capability of the impacts. Sensors made of PVDF piezoelectric film were employed and tested to evaluate the detectability of impact signals and assess the onset or threshold of impact damage. Testing was performed over a range of impact energy levels, where the sensors were adhered to the back of the specimens. The PVDF signal levels were analyzed and compared to assess damage, where digital microscopy, visual inspection, and white light interferometry were used for damage verification. Based on the impact test results, an assessment of the impact damage thresholds for each type of metallic TPS system was made.

  20. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  1. Evaluating Origin of Electron Traps in Tris(8-hydroxyquinoline) Aluminum Thin Films using Thermally Stimulated Current Technique

    OpenAIRE

    Matsushima, Toshinori; Adachi, Chihaya

    2008-01-01

    We measured the energy distributions and concentrations of electron traps in O_2-unexposed and O_2-exposed tris(8-hydroxyquinoline) aluminum (Alq_3) films using a thermally stimulated current (TSC) technique to investigate how doping O_2 molecules in Alq_3 films affect the films' electron trap and electron transport characteristics. The results of our TSC studies revealed that Alq_3 films have an electron trap distribution with peak depths ranging from 0.075 to 0.1 eV and peak widths ranging ...

  2. Thin Film Thermoelectric Metal-Organic Framework with High Seebeck Coefficient and Low Thermal Conductivity. Supporting Information

    Science.gov (United States)

    2015-04-28

    conductivity The Green- Kubo method uses the auto-correlation of equilibrium heat flux J to calculate the conductivity κ from the expression (2) where V...specific experiments are discussed here, specifically, sensitivity calculations of our measurements to the thermal conductivity of the TCNQ@Cu3(BTC)2...where x denotes κMOF, CMOF, hK,Al/MOF or hK,MOF/SiO2. This TDTR sensitivity, Sx, is calculated by ]ln[ )( )( ln )( x tV tV tS out in x

  3. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  4. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  5. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  6. Study of 'liquid gold' coatings: Thermal decomposition and formation of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deram, V. [Laboratoire de Spectrochimie Infrarouge et Raman, Universite des Sciences et Technologies de Lille, UMR CNRS 8516, Bat C5 - 59655 Villeneuve d' Ascq (France) and Ecole Nationale Superieure des Mines de Paris, Centre de Mise en Forme des Materiaux, UMR CNRS 7635, BP 207, 06904 Sophia-Antipolis (France)]. E-mail: virginie.deram@ensmp.fr; Turrell, S. [Laboratoire de Spectrochimie Infrarouge et Raman, Universite des Sciences et Technologies de Lille, UMR CNRS 8516, Bat C5 - 59655 Villeneuve d' Ascq (France); Darque-Ceretti, E. [Ecole Nationale Superieure des Mines de Paris, Centre de Mise en Forme des Materiaux, UMR CNRS 7635, BP 207, 06904 Sophia-Antipolis (France); Aucouturier, M. [Centre de Recherche et de Restauration des Musees de France, UMR CNRS 171, Palais du Louvre, Porte des Lions, 14 quai F. Mitterrand, 75001 Paris Cedex (France)

    2006-09-25

    Organo-metallic solutions called liquid gold are largely used to obtain thin gilded films which are employed for decorative, technological and functional uses. However, these films often prove to be fragile with respect to use, resulting in loss of brilliance or even eventual film removal. An understanding of the behaviour of the layers requires good knowledge of the materials themselves. The present work was undertaken to better understand the evolution of the structural properties of liquid gold as it undergoes heat-processing. Accordingly, we followed the thermal decomposition processes of liquid gold coatings and the formation of the gilded metal layer using a combination of experimental techniques. First, thermal analyses coupled with mass spectrometry and infrared spectroscopy gave information concerning the decomposition of the organic medium. It has been found that the process of film formation can be decomposed into three steps, the second of which is an abrupt transition between 300 and 350 deg. C. Details on this transition have been obtained using real-time X-ray Diffraction and Rutherford Backscattering Spectrometry. Above 350 deg. C, the microstructure of the coating is reorganized to obtain a final layer which contains particles, of the size of a few hundreds nanometers, as shown by Transmission Electron Microscopy.

  7. Ion-beam mixing and thermal annealing of Al--Nb and Al--Ta thin films

    International Nuclear Information System (INIS)

    Rai, A.K.; Bhattacharya, R.S.; Mendiratta, M.G.; Subramanian, P.R.; Dimiduk, D.M.

    1988-01-01

    Ion-beam mixing and thermal annealing of thin, alternating layers of Al and Nb, as well as Al and Ta, were investigated by selected area diffraction and Rutherford backscattering. The individual layer thicknesses were adjusted to obtain the overall compositions as Al 3 Nb and Al 3 Ta. The films were ion mixed with 1 MeV Au + ions at a dose of 1 x 10 16 ions cm/sup -2/ . Uniform mixing and amorphization were achieved for both Al--Nb and Al--Ta systems. Equilibrium crystalline Al 3 Nb and Al 3 Ta phases were formed after annealing of ion mixed amorphous films at 400 0 C for 6 h. Unmixed films, however, remained unreacted at 400 0 C for 1 h. Partial reaction was observed in the unmixed film of Al--Nb at 400 0 C for 6 h. After annealing at 500 0 C for 1 h, a complete reaction and formation of Al 3 Nb and Al 3 Ta phases in the respective films were observed. The influence of thermodynamics on the phase formation by ion mixing and thermal annealing is discussed

  8. Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

    International Nuclear Information System (INIS)

    De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.

    2012-01-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.

  9. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  10. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  11. A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Hazra, Purnima; Jit, S.

    2014-01-01

    This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

  12. Role of thermal stresses on pulsed laser irradiation of thin films under conditions of microbump formation and nonvaporization forward transfer

    Science.gov (United States)

    Meshcheryakov, Yuri P.; Shugaev, Maxim V.; Mattle, Thomas; Lippert, Thomas; Bulgakova, Nadezhda M.

    2013-11-01

    This paper presents a theoretical analysis of the processes in thin solid films irradiated by short and ultrashort laser pulses in the regimes of film structuring and laser-induced forward transfer. The regimes are considered at which vaporization of the film materials is insignificant and film dynamics is governed mainly by mechanical processes. Thermoelastoplastic modeling has been performed for a model film in one- and two-dimensional geometries. A method has been proposed to estimate the height of microbumps produced by nanosecond laser irradiation of solid films. Contrary to femtosecond laser pulses, in nanosecond pulse regimes, stress waves across the film are weak and cannot induce film damage. The main role in laser-induced dynamics of irradiated films is played by radial thermal stresses which lead to the formation of a bending wave propagating along the film and drawing the film matter to the center of the irradiation spot. The bending wave dynamics depends on the hardness of the substrate underlying the film. The causes of the receiver substrate damage sometimes observed upon laser-induced forward transfer in the scheme of the direct contact between the film and the receiver are discussed.

  13. Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Broitman, Esteban, E-mail: esbro@ifm.liu.se [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping (Sweden); Flores-Ruiz, Francisco J. [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping, Sweden and Centro de Investigación y de Estudios Avanzados del I.P.N., Unidad Querétaro, Querétaro 76230 (Mexico); Di Giulio, Massimo [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Gontad, Francisco; Lorusso, Antonella; Perrone, Alessio [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce, Italy and INFN-Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

    2016-03-15

    In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

  14. Characterization of organic thin films

    CERN Document Server

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  15. Effect of thermal treatment on solid–solid interface of hematite thin film synthesized by spin-coating deposition solution

    International Nuclear Information System (INIS)

    Bellido-Aguilar, Daniel Angel; Tofanello, Aryane; Souza, Flavio L.; Furini, Leonardo Negri; Constantino, Carlos José Leopoldo

    2016-01-01

    This work describes hematite films prepared by a spin-coating deposition solution (SCDS) method that is a sol–gel method derived technique. Hematite films were prepared at two heat treatment temperatures (500 °C and 800 °C) and the influence of thermal treatment on the photoelectrochemical performance was studied. In addition, since the SCDS method allows an optimal control of stoichiometry and impurity incorporation, hematite films modified with Zn 2+ and Sn 4+ were also prepared. The 800 °C-treated hematite films had a higher wettability and roughness that enabled them to have a better photocatalytic response in comparison with that of 500 °C-treated hematite films. Moreover, modified hematite films demonstrated to have a performance slightly better than that of undoped hematite film as shown in linear sweep voltammetry and chronoamperometry results. Although an improvement in the performance of hematite films was achieved by annealing at higher temperatures and incorporating Zn 2+ or Sn 4+ , the general photocatalytic response of the films was poor. Two plausible hypotheses were discussed related to the (i) dopant segregation at grain boundary, and (ii) poor contact between the hematite and fluorine doped tin oxide layer (from the glass substrate), which was experimentally confirmed by a cross-sectional analysis conducted using scanning electron microscopy (SEM). In fact, additional experiments need to be done in order to improve the hematite deposition and make the SCDS a promise method for industrial application. - Highlights: • High temperature of annealing decreases the hematite adherence and performance. • Zn 2+ and Sn 4+ dopants affected differently the photocurrent onset potentials. • Dopants affected the grain size due to their segregation at grain boundaries.

  16. Effect of thermal treatment on solid–solid interface of hematite thin film synthesized by spin-coating deposition solution

    Energy Technology Data Exchange (ETDEWEB)

    Bellido-Aguilar, Daniel Angel; Tofanello, Aryane [Centro de Ciências Naturais e Humanas (CCNH), Universidade Federal do ABC, Av. dos Estados N°5001, Bangu, Santo André, São Paulo CEP 09210-580 (Brazil); Souza, Flavio L., E-mail: flavio.souza@ufabc.edu.br [Centro de Ciências Naturais e Humanas (CCNH), Universidade Federal do ABC, Av. dos Estados N°5001, Bangu, Santo André, São Paulo CEP 09210-580 (Brazil); Furini, Leonardo Negri; Constantino, Carlos José Leopoldo [Faculdade de Ciências e Tecnologia (FCT), UNESP Univ Estadual Paulista, Presidente Prudente, São Paulo, 19060-900 (Brazil)

    2016-04-01

    This work describes hematite films prepared by a spin-coating deposition solution (SCDS) method that is a sol–gel method derived technique. Hematite films were prepared at two heat treatment temperatures (500 °C and 800 °C) and the influence of thermal treatment on the photoelectrochemical performance was studied. In addition, since the SCDS method allows an optimal control of stoichiometry and impurity incorporation, hematite films modified with Zn{sup 2+} and Sn{sup 4+} were also prepared. The 800 °C-treated hematite films had a higher wettability and roughness that enabled them to have a better photocatalytic response in comparison with that of 500 °C-treated hematite films. Moreover, modified hematite films demonstrated to have a performance slightly better than that of undoped hematite film as shown in linear sweep voltammetry and chronoamperometry results. Although an improvement in the performance of hematite films was achieved by annealing at higher temperatures and incorporating Zn{sup 2+} or Sn{sup 4+}, the general photocatalytic response of the films was poor. Two plausible hypotheses were discussed related to the (i) dopant segregation at grain boundary, and (ii) poor contact between the hematite and fluorine doped tin oxide layer (from the glass substrate), which was experimentally confirmed by a cross-sectional analysis conducted using scanning electron microscopy (SEM). In fact, additional experiments need to be done in order to improve the hematite deposition and make the SCDS a promise method for industrial application. - Highlights: • High temperature of annealing decreases the hematite adherence and performance. • Zn{sup 2+} and Sn{sup 4+} dopants affected differently the photocurrent onset potentials. • Dopants affected the grain size due to their segregation at grain boundaries.

  17. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  18. Buckling of Thin Films in Nano-Scale

    Directory of Open Access Journals (Sweden)

    Li L.A.

    2010-06-01

    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  19. Tailoring the magnetic properties and thermal stability of FeSiAl-Al{sub 2}O{sub 3} thin films fabricated by hybrid oblique gradient-composition sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Xiaoxi, E-mail: xiaoxi.zhong@gmail.com [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China); Phuoc, Nguyen N. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, 117411 Singapore (Singapore); Soh, Wee Tee [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive3, 117542 Singapore (Singapore); Ong, C.K. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, 117411 Singapore (Singapore); Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive3, 117542 Singapore (Singapore); Peng, Long; Li, Lezhong [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China)

    2017-05-01

    In this study, we systematically investigate the dynamic magnetic properties of FeSiAl-Al{sub 2}O{sub 3} thin films fabricated by hybrid oblique gradient-composition sputtering technique with respect to temperature ranging from 300 K to 420 K. The magnetic anisotropy field H{sub K} and ferromagnetic resonance frequency f{sub FMR} can be tuned from 14.06 to 110.18 Oe and 1.05–3.05 GHz respectively, by changing the oblique angle, which can be interpreted in terms of the contribution of stress-induced anisotropy and shape anisotropy. In addition, the thermal stability of FeSiAl-Al{sub 2}O{sub 3} films in terms of magnetic anisotropy H{sub K} and ferromagnetic resonance frequency f{sub FMR} are enhanced with the increase of oblique angle up to 35° while the thermal stability of effective Gilbert damping factor α{sub eff} and the maximum imaginary permeability μ’’{sub max} are improved with the increase of oblique angle up to 45°. - Highlights: • We prepared FeSiAl-based thin films using hybrid oblique gradient-composition deposition technique. • The microwave properties of FeSiAl-based thin films were systematically studied. • The thermal stability of microwave properties of FeSiAl-based films was studied. • The permeabilities were got using shorted micro-strip transmission-line perturbation. • The thermal stability of properties we studied is relatively good.

  20. Thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films and superlattices with reduced thermal conductivities

    International Nuclear Information System (INIS)

    Jaeger, Tino

    2013-01-01

    Rising energy costs and enhanced CO 2 emission have moved research about thermoelectric (TE) materials into focus. The suitability of a material for usage in TE devices depends on the figure of merit ZT and is equal to α 2 σTκ -1 including Seebeck coefficient α, conductivity σ, temperature T and thermal conductivity κ. Without affecting the power factor α 2 σ, using nanostructuring, ZT should here be increased by a depressed thermal conductivity. As half-Heusler (HH) bulk materials, the TE properties of TiNiSn and Zr 0.5 Hf 0.5 NiSn have been extensively studied. Here, semiconducting TiNiSn and Zr 0.5 Hf 0.5 NiSn thin films were fabricated for the first time by dc magnetron sputtering. On MgO (100) substrates, strongly textured polycrystalline films were obtained at substrate temperatures of about 450 C. The film consisted of grains with an elongation perpendicular to the surface of 55 nm. These generated rocking curves with FWHMs of less than 1 . Structural analyses were performed by X ray diffraction (XRD). Having deposition rates of about 1 nms -1 within shortest time also films in the order of microns were fabricated. For TiNiSn the highest in-plane power factor of about 0.4 mWK -2 m -1 was measured at about 550 K. In addition, at room temperature a cross-plane thermal conductivity of 2.8 Wm -1 K -1 was observed by the differential 3ω method. Because the reduction of thermal conductivity by mass fluctuation is well-known and interface scattering of phonons is expected, superlattices (SL) were fabricated. Therefore, TiNiSn and Zr 0.5 Hf 0.5 NiSn were successively deposited. While the sputter cathodes were continuously running, for fabrication of SLs the substrates were moved from one to another. The high crystal quality of the SLs and the sharp interfaces were proven by satellite peaks (XRD) and Scanning Transmission Electron Microscopy (STEM). For a SL with a periodicity of 21 nm (TiNiSn and Zr 0.5 Hf 0.5 NiSn each 15 nm) at a temperature of 550 K an

  1. Preventing Thin Film Dewetting via Graphene Capping.

    Science.gov (United States)

    Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

    2017-09-01

    A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Thin films prepared from tungstate glass matrix

    Energy Technology Data Exchange (ETDEWEB)

    Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

    2008-01-30

    Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.

  3. Analysis of non-contact and contact probe-to-sample thermal exchange for quantitative measurements of thin film and nanostructure thermal conductivity by the scanning hot probe method

    Science.gov (United States)

    Wilson, Adam A.

    The ability to measure thermal properties of thin films and nanostructured materials is an important aspect of many fields of academic study. A strategy especially well-suited for nanoscale investigations of these properties is the scanning hot probe technique, which is unique in its ability to non-destructively interrogate the thermal properties with high resolution, both laterally as well as through the thickness of the material. Strategies to quantitatively determine sample thermal conductivity depend on probe calibration. State of the art calibration strategies assume that the area of thermal exchange between probe and sample does not vary with sample thermal conductivity. However, little investigation has gone into determining whether or not that assumption is valid. This dissertation provides a rigorous study into the probe-to-sample heat transfer through the air gap at diffusive distances for a variety of values of sample thermal conductivity. It is demonstrated that the thermal exchange radius and gap/contact thermal resistance varies with sample thermal conductivity as well as tip-to-sample clearance in non-contact mode. In contact mode, it is demonstrated that higher thermal conductivity samples lead to a reduction in thermal exchange radius for Wollaston probe tips. Conversely, in non-contact mode and in contact mode for sharper probe tips where air contributes the most to probe-to-sample heat transfer, the opposite trend occurs. This may be attributed to the relatively strong solid-to-solid conduction occurring between probe and sample for the Wollaston probes. A three-dimensional finite element (3DFE) model was developed to investigate how the calibrated thermal exchange parameters vary with sample thermal conductivity when calibrating the probe via the intersection method in non-contact mode at diffusive distances. The 3DFE model was then used to explore the limits of sensitivity of the experiment for a range of simulated experimental conditions. It

  4. Influence of composition on optical and dispersion parameters of thermally evaporated non-crystalline Cd{sub 50}S{sub 50−x}Se{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassanien, A.S., E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Dept., Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia); Akl, Alaa A. [Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

    2015-11-05

    Non-crystalline thin films of chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} system (30 ≤ x ≤ 50) were obtained by thermal evaporation technique onto a pre-cleaned glass substrate at a vacuum of 8.2 × 10{sup −4} Pa. The deposition rate and film thickness were kept constant at about 8 nm/s and 200 nm, respectively. Amorphous/crystalline nature and chemical composition of films have been checked using X-ray diffraction and energy dispersive X-ray spectroscopy (EDX). Optical properties of thin films were investigated and studied using the corrected transmittance, T(λ) and corrected reflectance, R(λ) measurements. Obtained data reveal that, the indirect optical energy gap (E{sub g}) was decreased from 2.21 to 1.57 eV. On the contrary, Urbach energy (band tail width), E{sub U} was found to be increased from 0.29 to 0.45 eV. This behavior is believed to be associated with the increase of Se-content instead of S-content in the thin films of Cd{sub 50}S{sub 50−x}Se{sub x} system. Chemical bond approach model, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. Optical density, skin depth, extinction coefficient, refractive index and optical conductivity of chalcogenide CdSSe thin films were discussed as functions of Se-content. Using Wemple-DiDomenico single oscillator model, the refractive index dispersion and energy parameters and their dependence on Se content were studied. - Highlights: • Amorphous thin films of thickness 200 nm of Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) have prepared. • Optical properties, indirect optical energy gap and band tail width were studied. • Chemical bond approach, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. • New data of dispersion refractive index parameters were investigated and discussed.

  5. Studies on dielectric properties, opto-electrical parameters and electronic polarizability of thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassanien, Ahmed Saeed, E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Department, Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

    2016-06-25

    The objective of this work is to study the influence of the addition of more Se on dielectric properties, opto-electrical parameters and electronic polarizability of amorphous chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} thin films (30 ≤ x ≤ 50 at%). Thin films of thickness 200 nm were synthesized by vacuum deposition at ≈8.2 × 10{sup −4} Pa. Both refractive index and extinction coefficient were used to obtain all the studied parameters. The high frequency dielectric constant, real and imaginary parts of dielectric constant were discussed. Drude theory was applied to investigate opto-electrical parameters, like optical carrier concentration, optical mobility and optical resistivity. Moreover, other parameters were investigated and studied, e.g. Drude parameters, volume and surface energy loss functions, dielectric loss factor, dielectric relaxation time, complex optical conductivity and electronic polarizability as well as optical electronegativity and third-order nonlinear optical susceptibility. Values of electronic polarizability and nonlinear optical susceptibility were found to be decreased while optical electronegativity increased as Se-content was increased. Increment of Se-content in amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films has also led to minimize the energy losses when electromagnetic waves propagate through films as well as optical conductivity and the speed of light increased. The other studied properties and parameters of Cd{sub 50}S{sub 50−x}Se{sub x} films were found to be strongly dependent upon Se-content. - Highlights: • Thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) thin films were deposited. • Refractive index and absorption index were used to determine almost all properties. • Dielectric properties, Drude parameters and electronic polarizability were studied. • Addition of more Se to CdSSe matrix led to improve the opto-electrical properties. • New data were obtained and

  6. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    Energy Technology Data Exchange (ETDEWEB)

    Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

    2014-04-07

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

  7. Investigation of the Emissivity and Suitability of a Carbon Thin Film for Terahertz Absorbers

    Science.gov (United States)

    2016-06-01

    however, the understanding that the introduction of a carbon thin film could reduce signal loss and will result in a change in thermal fluctuations is...NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS INVESTIGATION OF THE EMISSIVITY AND SUITABILITY OF A CARBON THIN FILM FOR TERAHERTZ ABSORBERS...TITLE AND SUBTITLE INVESTIGATION OF THE EMISSIVITY AND SUITABILITY OF A CARBON THIN FILM FOR TERAHERTZ ABSORBERS 5. FUNDING NUMBERS 6. AUTHOR(S) Naomi C

  8. In-situ X-Ray Analysis of Rapid Thermal Processing for Thin-Film Solar Cells: Closing the Gap between Production and Laboratory Efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Toney, Michael F. [SLAC National Accelerator Lab., Menlo Park, CA (United States); van Hest, Maikel F. A. M. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2017-02-21

    For materials synthesis, it is well known that the material final state may not reach equilibrium and depends on the synthetic process. In particular, processes that quickly remove the available energy from the material may leave it in a metastable state and the metastability may actually impart desirable functional properties. By its very nature, Rapid thermal processing (RTP) is ideally suited to produce such metastable materials. However, metastability and the dynamics of reaching a metastable state are poorly understood, since this is best accomplished through in situ monitoring. In this regard, RTP is particularly challenging as the processing time are very short (seconds to minutes). As a result, there is only poor understanding, and hence use, of RTP in industry. This is potentially a cost-increasing limitation, because RTP can decrease cost by decreasing processing time, and as such, increase throughput and decrease the total thermal budget of processing - a significant cost. RTP is already being used for key processing steps in PV technologies. With silicon wafer PV, it is used for establishing electrical contact between the Ag metal grid and the silicon (known as firing). In this process, a silicon wafer with deposited metal/frit in a grid pattern is heated rapidly to temperatures between 750 and 800 ºC. The processing time when the temperature is held above 600ºC is short (<5 seconds). This process has historically been optimized empirically and it is unclear how the thermal processing affects formation of the final contact between the metal and the silicon. In the case of thin-film PV, RTP has been demonstrated in the process of making absorber layers, i.e. CIGS and CZTS. Use of RTP can reduce the processing time from 10s of minutes to seconds, reducing the thermal budget and increasing the throughput significantly. The conversion from precursor material to final PV material is not well understood, and most of the process optimization is done

  9. Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing

    International Nuclear Information System (INIS)

    Lugo, S.; Peña, Y.; Calixto-Rodriguez, M.; López-Mata, C.; Ramón, M.L.; Gómez, I.; Acosta, A.

    2012-01-01

    Highlights: ► We obtained polycrystalline silver indium sulfide thin films through the annealing of chemically deposited In 2 S 3 –Ag 2 S films. ► According to XRD chalcopyrite structure of AgInS 2 was obtained. ► AgInS 2 thin film has a band gap of 1.86 eV and a conductivity value of 1.2 × 10 −3 (Ω cm) −1 . - Abstract: AgInS 2 thin films were obtained by the annealing of chemical bath deposited In 2 S 3 –Ag 2 S layers at 400 °C in N 2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS 2 has been obtained. These films have an optical band gap, E g , of 1.86 eV and an electrical conductivity value of 1.2 × 10 −3 (Ω cm) −1 .

  10. Improvements in the bias illumination stability of amorphous InGaZnO thin-film transistors by using thermal treatments

    International Nuclear Information System (INIS)

    Kim, Woo-Byung; Ryu, Sang Ouk; Lee, Dong-Keun

    2014-01-01

    The a-IGZO deposited by using the rf sputtering method features a conductive or an insulator characteristic based on amount of oxygen. We demonstrated that a post-treatment affects the resistance patterns of particular-sized InGaZnO(IGZO) thin films in a-IGZO thin-film transistors (TFTs). Post-annealing shifted the driving voltage of a-IGZO TFT to positive or negative values, depending on the annealing temperatures. Post-annealing may introduce oxygen vacancies or desorbed oxygen in the IGZO thin film. The changed driving voltage of IGZO TFTs coincides with the shift of the resistance pattern of IGZO. The fabricated a-IGZO TFTs exhibited a field effect mobility of 6.2 cm 2 /Vs, an excellent subthreshold gate swing of 0.32 V/decade, and a high I on/off ratio of > 10 9 . Under positive bias illumination stress (PBIS) and negative bias illumination stress (NBIS), after 3,600 seconds, the device threshold voltage shifted about 0.2 V and 0.3 V, respectively.

  11. Improvements in the bias illumination stability of amorphous InGaZnO thin-film transistors by using thermal treatments

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Woo-Byung; Ryu, Sang Ouk [Dankook University, Cheonan (Korea, Republic of); Lee, Dong-Keun [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of)

    2014-07-15

    The a-IGZO deposited by using the rf sputtering method features a conductive or an insulator characteristic based on amount of oxygen. We demonstrated that a post-treatment affects the resistance patterns of particular-sized InGaZnO(IGZO) thin films in a-IGZO thin-film transistors (TFTs). Post-annealing shifted the driving voltage of a-IGZO TFT to positive or negative values, depending on the annealing temperatures. Post-annealing may introduce oxygen vacancies or desorbed oxygen in the IGZO thin film. The changed driving voltage of IGZO TFTs coincides with the shift of the resistance pattern of IGZO. The fabricated a-IGZO TFTs exhibited a field effect mobility of 6.2 cm{sup 2}/Vs, an excellent subthreshold gate swing of 0.32 V/decade, and a high I{sub on/off} ratio of > 10{sup 9}. Under positive bias illumination stress (PBIS) and negative bias illumination stress (NBIS), after 3,600 seconds, the device threshold voltage shifted about 0.2 V and 0.3 V, respectively.

  12. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    International Nuclear Information System (INIS)

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  13. Preparation and optical and electrical evaluation of bulk SiO2 sonogel hybrid composites and vacuum thermal evaporated thin films prepared from molecular materials derived from (Fe, Co) metallic phthalocyanines and 1,8 dihydroxiantraquinone compounds

    International Nuclear Information System (INIS)

    Sanchez Vergara, Maria Elena; Morales-Saavedra, Omar G.; Ontiveros-Barrera, Fernando G.; Torres-Zuniga, Vicente; Ortega-Martinez, Roberto; Ortiz Rebollo, Armando

    2009-01-01

    Semiconducting molecular material of PcFe(CN)L1 and PcCo(CN)L1 (L1 = 1,8 dihydroxianthraquinone), PcFe(CN)L2 and PcCo(CN)L2 (L2 = double potassium salt of 1,8 dihydroxianthraquinone) have been successfully used to prepare thin film and bulk sol-gel hybrid optical materials. These samples were developed according to the vacuum thermal evaporation technique and the catalyst-free sonogel route, respectively. Thin films samples were deposited on Corning glass substrates and crystalline silicon wafers and were characterized by infrared (FTIR), Raman and ultraviolet-visible (UV-vis) spectroscopies. IR-spectroscopy and Raman studies unambiguously confirmed that the molecular material thin films exhibit the same intra-molecular bonds, which suggests that the thermal evaporation process does not alter these bonds significantly. These results show that it is possible to deposit molecular materials of PcFe(CN)L2 and PcCo(CN)L2 on Corning glass substrates and silicon wafers. From the UV-vis studies the optical band gap (E g ) was evaluated. The effect of temperature on conductivity was also evaluated in these samples. Finally, the studied molecular systems dissolved at different concentrations in tetrahydrofuran (THF) were successfully embedded into a highly pure SiO 2 sonogel network generated via sonochemical reactions to form several solid state, optically active sol-gel hybrid glasses. By this method, homogeneous and stable hybrid monoliths suitable for optical characterization can be produced. The linear optical properties of these amorphous bulk structures were determined by the Brewster angle method and by absorption-, Raman- and photoluminescent (PL)-spectroscopies, respectively

  14. Preparation and optical and electrical evaluation of bulk SiO{sub 2} sonogel hybrid composites and vacuum thermal evaporated thin films prepared from molecular materials derived from (Fe, Co) metallic phthalocyanines and 1,8 dihydroxiantraquinone compounds

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez Vergara, Maria Elena [Coordinacion de Ingenieria Mecatronica, Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786 Huixquilucan, Estado de Mexico (Mexico); Morales-Saavedra, Omar G. [Universidad Nacional Autonoma de Mexico, Centro de Ciencias Aplicadas y Desarrollo Tecnologico, CCADET-UNAM, A.P. 70-186, Coyoacan, 04510 Mexico, D.F. (Mexico)], E-mail: omar.morales@ccadet.unam.mx; Ontiveros-Barrera, Fernando G.; Torres-Zuniga, Vicente; Ortega-Martinez, Roberto [Universidad Nacional Autonoma de Mexico, Centro de Ciencias Aplicadas y Desarrollo Tecnologico, CCADET-UNAM, A.P. 70-186, Coyoacan, 04510 Mexico, D.F. (Mexico); Ortiz Rebollo, Armando [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, IIM-UNAM, A.P. 70-360, Coyoacan, 04510 Mexico, D.F. (Mexico)

    2009-02-25

    Semiconducting molecular material of PcFe(CN)L1 and PcCo(CN)L1 (L1 = 1,8 dihydroxianthraquinone), PcFe(CN)L2 and PcCo(CN)L2 (L2 = double potassium salt of 1,8 dihydroxianthraquinone) have been successfully used to prepare thin film and bulk sol-gel hybrid optical materials. These samples were developed according to the vacuum thermal evaporation technique and the catalyst-free sonogel route, respectively. Thin films samples were deposited on Corning glass substrates and crystalline silicon wafers and were characterized by infrared (FTIR), Raman and ultraviolet-visible (UV-vis) spectroscopies. IR-spectroscopy and Raman studies unambiguously confirmed that the molecular material thin films exhibit the same intra-molecular bonds, which suggests that the thermal evaporation process does not alter these bonds significantly. These results show that it is possible to deposit molecular materials of PcFe(CN)L2 and PcCo(CN)L2 on Corning glass substrates and silicon wafers. From the UV-vis studies the optical band gap (E{sub g}) was evaluated. The effect of temperature on conductivity was also evaluated in these samples. Finally, the studied molecular systems dissolved at different concentrations in tetrahydrofuran (THF) were successfully embedded into a highly pure SiO{sub 2} sonogel network generated via sonochemical reactions to form several solid state, optically active sol-gel hybrid glasses. By this method, homogeneous and stable hybrid monoliths suitable for optical characterization can be produced. The linear optical properties of these amorphous bulk structures were determined by the Brewster angle method and by absorption-, Raman- and photoluminescent (PL)-spectroscopies, respectively.

  15. Characterization of Sucrose Thin Films for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    S. L. Iconaru

    2011-01-01

    Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.

  16. Thin films for precision optics

    International Nuclear Information System (INIS)

    Araujo, J.F.; Maurici, N.; Castro, J.C. de

    1983-01-01

    The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

  17. Studies of tantalum nitride thin film resistors

    International Nuclear Information System (INIS)

    Langley, R.A.

    1975-01-01

    Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

  18. Electrical and optical properties of thermally-evaporated thin films from A2[TiO(C2O4)2] (A = K, PPh4) and 1,8-dihydroxyanthraquinone

    International Nuclear Information System (INIS)

    Carbia-Ruelas, E.; Sanchez-Vergara, M.E.; Garcia-Montalvo, V.; Morales-Saavedra, O.G.; Alvarez-Bada, J.R.

    2011-01-01

    In this work, the synthesis of molecular materials formed from A 2 [TiO(C 2 O 4 ) 2 ] (A = K, PPh4) and 1,8 dihydroxyanthraquinone is reported. The synthesized materials were characterized by atomic force microscopy (AFM), infrared (IR) and ultraviolet-visible (UV-vis) spectroscopy. IR spectroscopy showed that the molecular-material thin-films, deposited by vacuum thermal evaporation, exhibit the same intra-molecular vibration modes as the starting powders, which suggests that the thermal evaporation process does not alter the initial chemical structures. Electrical transport properties were studied by dc conductivity measurements. The electrical activation energies of the complexes, which were in the range of 0.003-1.16 eV, were calculated from Arrhenius plots. Optical absorption studies in the wavelength range of 190-1090 nm at room temperature showed that the optical band gaps of the thin films were around 1.9-2.3 eV for direct transitions Eg d . The cubic NLO effects were substantially enhanced for materials synthesized from K 2 [TiO(C 2 O 4 ) 2 ], where χ (3) (-3ω; ω, ω, ω) values in the promising range of 10 -12 esu have been evaluated.

  19. Electrical and optical properties of thermally-evaporated thin films from A{sub 2}[TiO(C{sub 2}O{sub 4}){sub 2}] (A = K, PPh{sub 4}) and 1,8-dihydroxyanthraquinone

    Energy Technology Data Exchange (ETDEWEB)

    Carbia-Ruelas, E. [Coordinacion de Ingenieria Mecatronica. Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico); Sanchez-Vergara, M.E., E-mail: elena.sanchez@anahuac.mx [Coordinacion de Ingenieria Mecatronica. Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico); Garcia-Montalvo, V. [Instituto de Quimica, Universidad Nacional Autonoma de Mexico. Circuito Exterior, Ciudad Universitaria, 04510, Mexico, D. F (Mexico); Morales-Saavedra, O.G. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, CCADET-UNAM. A. P. 70-186, Coyoacan, 04510, Mexico, D. F (Mexico); Alvarez-Bada, J.R. [Coordinacion de Ingenieria Mecatronica. Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico)

    2011-02-01

    In this work, the synthesis of molecular materials formed from A{sub 2}[TiO(C{sub 2}O{sub 4}){sub 2}] (A = K, PPh4) and 1,8 dihydroxyanthraquinone is reported. The synthesized materials were characterized by atomic force microscopy (AFM), infrared (IR) and ultraviolet-visible (UV-vis) spectroscopy. IR spectroscopy showed that the molecular-material thin-films, deposited by vacuum thermal evaporation, exhibit the same intra-molecular vibration modes as the starting powders, which suggests that the thermal evaporation process does not alter the initial chemical structures. Electrical transport properties were studied by dc conductivity measurements. The electrical activation energies of the complexes, which were in the range of 0.003-1.16 eV, were calculated from Arrhenius plots. Optical absorption studies in the wavelength range of 190-1090 nm at room temperature showed that the optical band gaps of the thin films were around 1.9-2.3 eV for direct transitions Eg{sub d}. The cubic NLO effects were substantially enhanced for materials synthesized from K{sub 2}[TiO(C{sub 2}O{sub 4}){sub 2}], where {chi}{sup (3)} (-3{omega}; {omega}, {omega}, {omega}) values in the promising range of 10{sup -12} esu have been evaluated.

  20. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  1. Stability of tetraphenyl butadiene thin films in liquid xenon

    International Nuclear Information System (INIS)

    Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.

    2016-01-01

    Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.

  2. Self-assembly of dodecaphenyl POSS thin films

    Science.gov (United States)

    Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

    2017-12-01

    The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

  3. Thickness and temperature dependence of electrical resistivity of p-type Bi0.5Sb1.5Te3 thin films prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Duan Xingkai; Yang Junyou; Zhu, W; Fan, X A; Bao, S Q

    2006-01-01

    P-type Bi 0.5 Sb 1.5 Te 3 thin films with thicknesses in the range 80-320 nm have been deposited by the flash evaporation method on glass substrates at 473 K. XRD and field emission scanning electron microscope were performed to characterize the thin films. The results show that the thin films are polycrystalline and the grain size of the thin films increases with increasing thickness of the thin films. Compositional analysis of the thin films was also carried out by energy-dispersive x-ray analysis. A near linear relationship was observed between the electrical resistivity and the inverse thickness of the annealed thin films, and it agrees with Tellier's model. Electrical resistivity of the annealed thin films was studied in the temperature range 300-350 K, and their thermal activation behaviour was characterized, the activation energy for conduction decreases with increasing thickness of the thin films

  4. Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature

    International Nuclear Information System (INIS)

    Giannetta, H.M.R.; Calaza, C.; Lamas, D.G.; Fonseca, L.; Fraigi, L.

    2015-01-01

    The present study investigates the main electrical transport mechanism in V 2 O 5 thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V 2 O 5 target and then oxidized at high temperature under air atmosphere to obtain the desired V 2 O 5 phase. The dependence of the electrical conductivity of the V 2 O 5 thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy W H = 0.1682 eV, with a structural disorder energy W D = 0.2241 eV and an optical phonon frequency ν 0 = 0.468 × 10 13 s −1 . These results are in agreement with data reported in literature for single crystal V 2 O 5 . However, the carrier mobility μ = 1.5019 × 10 −5 cm 2 /Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron–phonon coupling in the V 2 O 5 thin films obtained with the proposed deposition method. - Highlights: • A two-stage deposition method compatible with lift-off patterning is proposed. • V 2 O 5 films are deposited by RF magnetron sputtering and then annealed in air. • Films are analyzed by SEM and its pure phase nature is confirmed by XRD. • Electrical conductivity was fitted using Mott's model for small polarons. • Fit derived parameters confirm charge transport through small-polarons hopping

  5. Electrical transport properties of V{sub 2}O{sub 5} thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Giannetta, H.M.R., E-mail: hgiann@inti.gov.ar [Centro de Micro y Nano Electrónica del Bicentenario (CMNB), Instituto Nacional de Tecnología Industrial (INTI), San Martín, Buenos Aires (Argentina); Universidad Tecnológica Nacional (UTN) — Facultad Regional Buenos Aires (FRBA) (Argentina); Calaza, C. [Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, Bellaterra, 08193 Barcelona (Spain); Lamas, D.G. [Universidad Nacional del Comahue CONICET-CITEFA — Laboratorio de Caracterización de Materiales, Facultad de Ingeniería, Neuquen (Argentina); Fonseca, L. [Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus UAB, Bellaterra, 08193 Barcelona (Spain); Fraigi, L. [Centro de Micro y Nano Electrónica del Bicentenario (CMNB), Instituto Nacional de Tecnología Industrial (INTI), San Martín, Buenos Aires (Argentina); Universidad Tecnológica Nacional (UTN) — Facultad Regional Buenos Aires (FRBA) (Argentina)

    2015-08-31

    The present study investigates the main electrical transport mechanism in V{sub 2}O{sub 5} thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained at room temperature from a V{sub 2}O{sub 5} target and then oxidized at high temperature under air atmosphere to obtain the desired V{sub 2}O{sub 5} phase. The dependence of the electrical conductivity of the V{sub 2}O{sub 5} thin films with temperature was analyzed using the Mott's small polarons hopping transport model under the Schnakenberg form. Model results suggest a polaron binding energy W{sub H} = 0.1682 eV, with a structural disorder energy W{sub D} = 0.2241 eV and an optical phonon frequency ν{sub 0} = 0.468 × 10{sup 13}s{sup −1}. These results are in agreement with data reported in literature for single crystal V{sub 2}O{sub 5}. However, the carrier mobility μ = 1.5019 × 10{sup −5} cm{sup 2}/Vs computed in the non-adiabatic regime is significantly smaller than that of the single crystal, suggesting a strong electron–phonon coupling in the V{sub 2}O{sub 5} thin films obtained with the proposed deposition method. - Highlights: • A two-stage deposition method compatible with lift-off patterning is proposed. • V{sub 2}O{sub 5} films are deposited by RF magnetron sputtering and then annealed in air. • Films are analyzed by SEM and its pure phase nature is confirmed by XRD. • Electrical conductivity was fitted using Mott's model for small polarons. • Fit derived parameters confirm charge transport through small-polarons hopping.

  6. Nanocrystal thin film fabrication methods and apparatus

    Science.gov (United States)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  7. Thermal-induced changes on the properties of spin-coated P3HT:C60 thin films for solar cell applications

    CSIR Research Space (South Africa)

    Motaung, DE

    2009-09-01

    Full Text Available on the properties of spin- coated P3HT:C60 thin films for solar cell applications David E. Motaung1, 2, Gerald F. Malgas1,*, Christopher J. Arendse1, Sipho E. Mavundla1, 3 Clive J. Oliphant 1, 2 and Dirk Knoesen2 1National Centre for Nano...-structured Materials, Council for Scientific Industrial Research, P. O. Box 395, Pretoria, 0001, South Africa 2Deparment of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535, South Africa 3Deparment of Chemistry, University of the Western...

  8. Influence of thermal treatment in N{sub 2} atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stroescu, H.; Anastasescu, M.; Preda, S.; Nicolescu, M.; Stoica, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, Atomistilor 409, RO-77125, Bucharest-Magurele (Romania); Kampylafka, V.; Aperathitis, E. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Gartner, M., E-mail: mgartner@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania)

    2013-08-31

    We report the influence of the normal thermal treatment (TT) and of rapid thermal annealing (RTA) on the microstructural, optical and electrical properties of indium tin oxide (ITO) and nitrogen doped indium tin oxide (ITO:N) thin films. The TT was carried out for 1 h at 400 °C and the RTA for 1 min up to 400 °C, both in N{sub 2} atmosphere. The ITO and ITO:N films were deposited by reactive sputtering in Argon, and respectively Nitrogen plasma, on Si with (100) and (111) orientation. The present study brings data about the microstructural and optical properties of ITO thin films with thicknesses around 300–400 nm. Atomic Force Microscopy analysis showed the formation of continuous and homogeneous films, fully covered by quasi-spherical shaped particles, with higher roughness values on Si(100) as compared to Si(111). Spectroscopic ellipsometry allowed the determination of film thickness, optical band gap as well as of the dispersion curves of n and k optical constants. X-ray diffraction analysis revealed the presence of diffraction peaks corresponding to the same nominal bulk composition of ITO, but with different intensities and preferential orientation depending on the substrate, atmosphere of deposition and type of thermal treatment. - Highlights: ► Stability of the films can be monitored by experimental ellipsometric spectra. ► The refractive index of indium tin oxide film on 0.3–30 μm range is reported. ► Si(100) substrate induces rougher film surfaces than Si(111). ► Rapid thermal annealing and normal thermal treatment lead to stable conductive film. ► The samples have a higher preferential orientation after rapid thermal annealing.

  9. Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

    International Nuclear Information System (INIS)

    Wang, Quan; Zhang, Yanmin; Hu, Ran; Ren, Naifei; Ge, Daohan

    2013-01-01

    Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases

  10. Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Yanmin; Hu, Ran; Ren, Naifei [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2013-11-14

    Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

  11. Molecular dynamics simulation of Cu/Au thin films under temperature gradient

    International Nuclear Information System (INIS)

    Li, Qibin; Peng, Xianghe; Peng, Tiefeng; Tang, Qizhong; Zhang, Xiaomin; Huang, Cheng

    2015-01-01

    Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.

  12. Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

    Directory of Open Access Journals (Sweden)

    Cui Yan

    2014-01-01

    Full Text Available Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47O3 (PZT thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

  13. Molecular dynamics simulation of Cu/Au thin films under temperature gradient

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qibin, E-mail: qibinli@cqu.edu.cn [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Peng, Xianghe [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Peng, Tiefeng, E-mail: pengtiefeng@cqu.edu.cn [State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Tang, Qizhong [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Zhang, Xiaomin [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Huang, Cheng [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China)

    2015-12-01

    Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.

  14. The Influence of Temperature on the Formation of Cubic Structured CdO Nanoparticles and Their Thin Films from Bis(2-hydroxy-1-naphthaldehydatocadmium(II Complex via Thermal Decomposition Technique

    Directory of Open Access Journals (Sweden)

    Thokozani Xaba

    2017-01-01

    Full Text Available Recently, researchers have developed a great interest in the synthesis of metal oxide nanoparticles due to their potential applications in various fields of science and industry, especially in catalysis, due to their high activity. Bis(2-hydroxy-1-naphthaldehydatocadmium(II complexes were prepared and used as precursors for the synthesis of cadmium oxide nanoparticles via thermal decomposition method using HDA as a stabilizing agent. The prepared complexes were also used as single source precursors to prepare CdO thin films onto the glass substrates by spin coating and were annealed at 250, 300, and 350°C, respectively. The precursors were characterized by Fourier transform infrared (FTIR spectroscopy, elemental analysis, nuclear magnetic resonance (NMR, and thermogravimetric analysis (TGA. The synthesized CdO nanoparticles and CdO thin films were characterized by ultraviolet-visible (UV-vis spectroscopy, photoluminescence (PL, X-ray diffraction (XRD, transmission electron microscopy (TEM, scanning electron microscopy (SEM, and atomic force microscopy (AFM.

  15. Magnetic characterisation of longitudinal thin film media

    International Nuclear Information System (INIS)

    Dova, P.

    1998-09-01

    Magnetic characterisation techniques, as applied to longitudinal thin film media, have been investigated. These included the study of the differentials of the remanence curves, the delta-M plot and the examination of the critical volumes. Several thin film structures, which are currently used or are being considered for future media applications, have been examined using these techniques. Most of the films were Co-alloys with the exception of a set of Barium ferrite films. Both monolayer and multilayer structures were studied. It was found that the study of activation volumes provides a better insight into the reversal mechanisms of magnetic media, especially in the case of complex structures such as multilayer films and films with bicrystal microstructure. Furthermore, an evaluation study of different methods of determining critical volumes showed that the method using time dependence measurements and the micromagnetic approach is the most appropriate. The magnetic characteristics of the thin film media under investigation were correlated with their microstructure and, where possible, with their noise performance. Magnetic force microscopy was also used for acquiring quasi-domain images in the ac-demagnetised state. It was found that in all Co-alloy films the dominant intergranular coupling is magnetising in nature, the level of which is governed by the Cr content in the magnetic layer. In the case of laminated media it was found that when non-magnetic spacers are used, the nature of the interlayer coupling depends on the spacer thickness. In double layer structures with no spacer, the top layer replicates the crystallographic texture of the bottom layer, and the overall film properties are a combination of the two layers. In bicrystal films the coupling is determined by the Cr segregation in the grain boundaries. Furthermore, the presence of stacking faults in bicrystal films deteriorates their thermal stability, but can be prevented by improving the epitaxial

  16. Resistance switching induced by electric fields in manganite thin films

    International Nuclear Information System (INIS)

    Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P

    2007-01-01

    In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results

  17. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  18. Preparation of mesoporous silica thin films by photocalcination method and their adsorption abilities for various proteins

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Katsuya, E-mail: katsuya-kato@aist.go.jp [National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Nakamura, Hitomi [National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Yamauchi, Yoshihiro; Nakanishi, Kazuma; Tomita, Masahiro [Department of Chemistry for Materials, Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8570 (Japan)

    2014-07-01

    Mesoporous silica (MPS) thin film biosensor platforms were established. MPS thin films were prepared from tetraethoxysilane (TEOS) via using sol–gel and spin-coating methods using a poly-(ethylene oxide)-block-poly-(propylene oxide)-block-poly-(ethylene oxide) triblock polymer, such as P123 ((EO){sub 20}(PO){sub 70}(EO){sub 20}) or F127 ((EO){sub 106}(PO){sub 70}(EO){sub 106}), as the structure-directing agent. The MPS thin film prepared using P123 as the mesoporous template and treated via vacuum ultraviolet (VUV) irradiation to remove the triblock copolymer had a more uniform pore array than that of the corresponding film prepared via thermal treatment. Protein adsorption and enzyme-linked immunosorbent assay (ELISA) on the synthesized MPS thin films were also investigated. VUV-irradiated MPS thin films adsorbed a smaller quantity of protein A than the thermally treated films; however, the human immunoglobulin G (IgG) binding efficiency was higher on the former. In addition, protein A–IgG specific binding on MPS thin films was achieved without using a blocking reagent; i.e., nonspecific adsorption was inhibited by the uniform pore arrays of the films. Furthermore, VUV-irradiated MPS thin films exhibited high sensitivity for ELISA testing, and cytochrome c adsorbed on the MPS thin films exhibited high catalytic activity and recyclability. These results suggest that MPS thin films are attractive platforms for the development of novel biosensors. - Highlights: • VUV-treated MPS thin films with removed polymer had uniform pore. • VUV-treated MPS thin films exhibited high sensitivity by ELISA. • Cytochrome c showed the catalytic activity and recyclability on synthesized films.

  19. Preparation of mesoporous silica thin films by photocalcination method and their adsorption abilities for various proteins

    International Nuclear Information System (INIS)

    Kato, Katsuya; Nakamura, Hitomi; Yamauchi, Yoshihiro; Nakanishi, Kazuma; Tomita, Masahiro

    2014-01-01

    Mesoporous silica (MPS) thin film biosensor platforms were established. MPS thin films were prepared from tetraethoxysilane (TEOS) via using sol–gel and spin-coating methods using a poly-(ethylene oxide)-block-poly-(propylene oxide)-block-poly-(ethylene oxide) triblock polymer, such as P123 ((EO) 20 (PO) 70 (EO) 20 ) or F127 ((EO) 106 (PO) 70 (EO) 106 ), as the structure-directing agent. The MPS thin film prepared using P123 as the mesoporous template and treated via vacuum ultraviolet (VUV) irradiation to remove the triblock copolymer had a more uniform pore array than that of the corresponding film prepared via thermal treatment. Protein adsorption and enzyme-linked immunosorbent assay (ELISA) on the synthesized MPS thin films were also investigated. VUV-irradiated MPS thin films adsorbed a smaller quantity of protein A than the thermally treated films; however, the human immunoglobulin G (IgG) binding efficiency was higher on the former. In addition, protein A–IgG specific binding on MPS thin films was achieved without using a blocking reagent; i.e., nonspecific adsorption was inhibited by the uniform pore arrays of the films. Furthermore, VUV-irradiated MPS thin films exhibited high sensitivity for ELISA testing, and cytochrome c adsorbed on the MPS thin films exhibited high catalytic activity and recyclability. These results suggest that MPS thin films are attractive platforms for the development of novel biosensors. - Highlights: • VUV-treated MPS thin films with removed polymer had uniform pore. • VUV-treated MPS thin films exhibited high sensitivity by ELISA. • Cytochrome c showed the catalytic activity and recyclability on synthesized films

  20. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  1. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  2. Review of thin film superconductivity

    International Nuclear Information System (INIS)

    Kihlstrom, K.E.

    1989-01-01

    Advances in thin film superconductivity are critical to the success of many proposed applications. The authors review several of the prominent techniques currently used to produce thin films of the high temperature superconductors including electron beam co-deposition, sputtering (both multiple and composite source configurations) and laser ablation. The authors look at the relevant parameters for each and evaluate the advantages and disadvantages of each technique. In addition, promising work on in situ oxidation is discussed. Also addressed are efforts to find optimum substrate materials and substrate buffer layers for various applications. The current state of the art for T c , J c and H c2 is presented for the yttrium, bismuth, and thallium compounds

  3. Thin-Film Power Transformers

    Science.gov (United States)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  4. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron ... alloys of Ni and Fe) take an important place. NiFe alloy with a ... room temperature (∼298 K, without intentional heating) on Si(100) substrates. A base pressure of 1×10−6 mbar was achieved prior to the deposition. Three different ...

  5. A comparative study of thermal annealing effects under various atmospheres on nano-structured CdS thin films prepared by CBD

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingjun; Li, Jianmin; Chen, Guilin; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn; Liu, Weifeng, E-mail: liuwf@ustc.edu.cn

    2013-10-05

    Highlights: •Smooth and uniform CdS thin films were deposited successfully by CBD method. •The influence of CdCl{sub 2}-assisted annealing under various atmospheres of CdS films has been investigated. •We gave a more detailed research on annealing temperature after identified the most optimal annealing method. •High quality CdS films were obtained with air–CdCl{sub 2}-assisted treatments at 400 °C for 0.5 h. •GIXRD was used as a new analysis method of CdS in this paper. -- Abstract: Cadmium sulfide (CdS) nanofilms have been deposited on the glass substrate using the chemical bath technique. The effects of CdCl{sub 2}-assisted annealing under different atmosphere (vacuum, Ar and air) on the structural, morphological and optical properties of CdS nanofilms have been studied. After identifying the optimal annealing atmosphere, we also investigated the CdS thin film annealed at different annealing temperature (300, 400 and 500 °C). Films have been characterized by GI-XRD analysis, scanning electron microscopy, and UV–Vis–NIR spectrophotometer. The as-deposited CdS films have been found to be nanocrystalline in nature with a mixture of two crystallographic phases: a hexagonal phase and a cubic phase. After annealed in air with a CdCl{sub 2} coating layer at 400 °C, the films showed pure hexagonal phase, indicating the phase transition of CdS. It was found that the treatment in air with a CdCl{sub 2} coating layer increased the crystallinity and the mean grain size of CdS film, which are advantageous to the application in solar cells as a window layer material.

  6. Electroless plating of low-resistivity Cu–Mn alloy thin films with self-forming capacity and enhanced thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Sung-Te, E-mail: stchen@mail.hust.edu.tw [Department of Electronic Engineering, Hsiuping University of Science and Technology, Dali 412, Taichung, Taiwan (China); Chen, Giin-Shan [Department of Materials Science and Engineering, Feng Chia University, Seatwen 407, Taichung, Taiwan (China)

    2015-11-05

    Previous studies have typically used sputter deposition to fabricate Cu–Mn alloy thin films with concentrated solute additions which have exceeded several atomic percentages, and the electrical resistivity values of the resultant films from previous studies are relatively high, ranging from 2.5 to 3.5 μΩ-cm. Herein, we proposed a different approach by using electroless process to plate dilute Cu–Mn (0.1 at.%) alloy thin films on dielectric layers (SiO{sub 2}). Upon forming-gas annealing, the Mn incorporated into Cu–Mn films was segregated toward the SiO{sub 2} side, eventually converting itself into a few atomic layer thickness at the Cu/SiO{sub 2} interface, and forming films with a low level of resistivity the same as that of pure Cu films (2.0 μΩ-cm). The interfacial layer served as not only a diffusion barrier, but also an adhesion promoter that prevented the film’s agglomeration during annealing at elevated temperatures. The mechanism for the dual-function performance by the Mn addition was elucidated by interfacial bonding analysis, as well as dynamic (adhesive strength) and thermodynamic (surface-tension) measurements. - Highlights: • Electroless plating is proposed to grow dilute (0.1%) Cu–Mn films on SiO{sub 2} layers. • Adequate annealing results in a self-forming of MnO{sub x} at the Cu/SiO{sub 2} interface. • The role of interfacial MnO{sub x} as a barrier and adhesion promoter is demonstrated. • The treated dilute film has a low ρ level of pure Cu, in contrast to concentrated films. • Its potential as a single entity replacement of Cu interconnect is presented.

  7. Superconducting thin films

    International Nuclear Information System (INIS)

    Hebard, A.F.; Vandenberg, J.M.

    1982-01-01

    This invention relates to granular metal and metal oxide superconducting films formed by ion beam sputter deposition. Illustratively, the films comprise irregularly shaped, randomly oriented, small lead grains interspersed in an insulating lead oxide matrix. The films are hillock-resistant when subjected to thermal cycling and exhibit unusual josephson-type switching characteristics. Depending on the oxygen content, a film may behave in a manner similar to that of a plurality of series connected josephson junctions, or the film may have a voltage difference in a direction parallel to a major surface of the film that is capable of being switched from zero voltage difference to a finite voltage difference in response to a current larger than the critical current

  8. Investigation of phase transformation for ferrite–austenite structure in stainless steel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Merakeb, Noureddine [Laboratory of Physical Metallurgy and Property of Materials (LM2PM), Metallurgy and Materials Engineering Department, Badji Mokhtar University, P.O. Box 12, Annaba 23000 (Algeria); Messai, Amel [Laboratoire d' Ingénierie et Sciences des Matériaux Avancés (ISMA), Institut des Sciences et Technologie, Abbès Laghrour University, Khenchela 40000 (Algeria); Ayesh, Ahmad I., E-mail: ayesh@qu.edu.qa [Department of Mathematics, Statistics and Physics, Qatar University, Doha (Qatar)

    2016-05-01

    In this work we report on phase transformation of 304 stainless steel thin films due to heat treatment. Ex-situ annealing was applied for evaporated 304 stainless steel thin films inside an ultra-high vacuum chamber with a pressure of 3 × 10{sup −7} Pa at temperatures of 500 °C and 600 °C. The structure of thin films was studied by X-ray diffraction (XRD) and conversion electron Mössbauer spectroscopy (CEMS) techniques. The results revealed a transformation from α-phase that exhibits a body-centered cubic structure (BCC) to γ-phase that exhibits a face-centered cubic (FCC) due to annealing. In addition, the percentage of γ-phase structure increased with the increase of annealing temperature. Annealing thin films increased the crystal size of both phases (α and γ), however, the increase was nonlinear. The results also showed that phase transformation was produced by recrystallization of α and γ crystals with a temporal evolution at each annealing temperature. The texture degree of thin films was investigated by XRD rocking curve method, while residual stress was evaluated using curvature method. - Highlights: • Stainless steel thin films were fabricated by thermal evaporation on quartz. • Alpha to gamma phase transformation of thin films was investigated. • Annealing of thin films reduces disruption in crystal lattice. • The stress of as-grown thin films was independent on the thin film thickness. • The stress of the thin films was reduced due to annealing.

  9. Structural and thermal characterization of La5Ca9Cu24O41 thin films grown by pulsed laser deposition on (1 1 0) SrTiO3 substrates

    International Nuclear Information System (INIS)

    Svoukis, E.; Athanasopoulos, G.I.; Altantzis, Th.; Lioutas, Ch.; Martin, R.S.; Revcolevschi, A.; Giapintzakis, J.

    2012-01-01

    In the present study stoichiometric, b-axis oriented La 5 Ca 9 Cu 24 O 41 thin films were grown by pulsed laser deposition on (1 1 0) SrTiO 3 substrates in the temperature range 600–750 °C. High resolution transmission electron microscopy was employed to investigate the growth mechanism and the epitaxial relationship between the SrTiO 3 substrates and the La 5 Ca 9 Cu 24 O 41 films grown at 700 °C. The 3-ω method was used to measure the cross-plane thermal conductivity of La 5 Ca 9 Cu 24 O 41 films in the temperature range 50–350 K. The observed glass-like behavior is attributed to atomic-scale defects, grain boundaries and an interfacial layer formed between film and substrate.

  10. Thermoanalytical study of the decomposition of yttrium trifluoroacetate thin films

    International Nuclear Information System (INIS)

    Eloussifi, H.; Farjas, J.; Roura, P.; Ricart, S.; Puig, T.; Obradors, X.; Dammak, M.

    2013-01-01

    We present the use of the thermal analysis techniques to study yttrium trifluoroacetate thin films decomposition. In situ analysis was done by means of thermogravimetry, differential thermal analysis, and evolved gas analysis. Solid residues at different stages and the final product have been characterized by X-ray diffraction and scanning electron microscopy. The thermal decomposition of yttrium trifluoroacetate thin films results in the formation of yttria and presents the same succession of intermediates than powder's decomposition, however, yttria and all intermediates but YF 3 appear at significantly lower temperatures. We also observe a dependence on the water partial pressure that was not observed in the decomposition of yttrium trifluoroacetate powders. Finally, a dependence on the substrate chemical composition is discerned. - Highlights: • Thermal decomposition of yttrium trifluoroacetate films. • Very different behavior of films with respect to powders. • Decomposition is enhanced in films. • Application of thermal analysis to chemical solution deposition synthesis of films

  11. Non-linear optics of nano-scale pentacene thin film

    Science.gov (United States)

    Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

    2016-07-01

    We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.

  12. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  13. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  14. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  15. Analysis of Hard Thin Film Coating

    Science.gov (United States)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  16. Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

    Science.gov (United States)

    Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

  17. Thin-Film Material Science and Processing | Materials Science | NREL

    Science.gov (United States)

    Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

  18. Structure and optical properties of Ge/Si quantum dots formed by driving the evolution of Ge thin films via thermal annealing

    Science.gov (United States)

    Shu, Qijiang; Yang, Jie; Chi, Qingbin; Sun, Tao; Wang, Chong; Yang, Yu

    2018-04-01

    Ge/Si quantum dots (QDs) are fabricated by driving the transformation of a Ge thin film-deposited using the direct current (DC) magnetron sputtering technique by controlling the subsequent in situ annealing processes. The experimental results indicate that, with the increase in annealing temperature, the volume of Ge QDs increases monotonically, while the QD density initially increases then decreases. The maximal QD density can reach 1.1 × 1011 cm‑2 after a 10 min annealing at 650 °C. The Ge–Ge peak of Ge QDs obtained by Raman spectroscopy initially undergoes a blue shift and then a red shift with increasing annealing temperature. This behavior results from the competition between the dislocation and the strain relaxation in QDs. Concurrently, a series of photoelectric detectors are fabricated to evaluate the photoelectric performance of these annealed Ge QD samples. A high-photoelectricity response is demonstrated in the QD sample annealed at 650 °C. Our results pave a promising way for whole-silicon-material optical-electronic integration based on a simple and practicable fabrication method.

  19. Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Zhang, Wen-Peng; Chen, Sun; Qian, Shi-Bing; Ding, Shi-Jin

    2015-01-01

    We studied how the performance of In–Ga–Zn–O (IGZO) thin film transistors (TFTs) with Al 2 O 3 gate insulator was affected by post-fabrication annealing temperature and annealing time. At a fixed annealing time of 2 min, the IGZO TFT exhibited the best transfer and output characteristics in the case of 300 °C in N 2 atmosphere, which is attributed to the achievement of appropriate carrier concentration and Hall mobility in the IGZO film. Further, it was found that both of the carrier concentration and Hall mobility in the IGZO film increased with the increment of annealing temperature. For the annealing temperature of 300 °C, the performance of the IGZO TFT was further improved by extending annealing time to 5 min, i.e., the field effect mobility, sub-threshold swing and on/off current ratio were 11.6 cm 2 /(V · s), 0.42 V dec −1 and 10 6 , respectively. The underlying mechanism was discussed. (paper)

  20. The Influence of the Composition of Ru100−xAlx (x = 50, 55, 60, 67 Thin Films on Their Thermal Stability

    Directory of Open Access Journals (Sweden)

    Marietta Seifert

    2017-03-01

    Full Text Available RuAl thin films possess a high potential as a high temperature stable metallization for surface acoustic wave devices. During the annealing process of the Ru-Al films, Al 2 O 3 is formed at the surface of the films even under high vacuum conditions, so that the composition of a deposited Ru 50 Al 50 film is shifted to a Ru-rich alloy. To compensate for this effect, the Al content is systematically increased during the deposition of the Ru-Al films. Three Al-rich alloys—Ru 45 Al 55 , Ru 40 Al 60 and Ru 33 Al 67 —were analyzed concerning their behavior after high temperature treatment under high vacuum and air conditions in comparison to the initial Ru 50 Al 50 sample. Although the films’ cross sections show a more homogeneous structure in the case of the Al-rich films, the RuAl phase formation is reduced with increasing Al content.

  1. Thermal Measurement during Electrolysis of Pd-Ni Thin-film -Cathodes in Li2SO4/H2O Solution

    Science.gov (United States)

    Castano, C. H.; Lipson, A. G.; S-O, Kim; Miley, G. H.

    2002-03-01

    Using LENR - open type calorimeters, measurements of excess heat production were carried out during electrolysis in Li_2SO_4/H_2O solution with a Pt-anode and Pd-Ni thin film cathodes (2000-8000 Åthick) sputtered on the different dielectric substrates. In order to accurately evaluate actual performance during electrolysis runs in the open-type calorimeter used, considering effects of heat convection, bubbling and possible H_2+O2 recombination, smooth Pt sheets were used as cathodes. Pt provides a reference since it does not produce excess heat in the light water electrolyte. To increase the accuracy of measurements the water dissociation potential was determined for each cathode taking into account its individual over-voltage value. It is found that this design for the Pd-Ni cathodes resulted in the excess heat production of ~ 20-25 % of input power, equivalent to ~300 mW. In cases of the Pd/Ni- film fracture (or detachment from substrate) no excess heat was detected, providing an added reference point. These experiments plus use of optimized films will be presented.

  2. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  3. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  4. Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

    Science.gov (United States)

    Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

    2018-01-01

    Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

  5. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  6. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  7. Heat wave propagation in a thin film irradiated by ultra-short laser pulses

    International Nuclear Information System (INIS)

    Yoo, Jae Gwon; Kim, Cheol Jung; Lim, C. H.

    2004-01-01

    A thermal wave solution of a hyperbolic heat conduction equation in a thin film is developed on the basis of the Green's function formalism. Numerical computations are carried out to investigate the temperature response and the propagation of the thermal wave inside a thin film due to a heat pulse generated by ultra-short laser pulses with various laser pulse durations and thickness of the film

  8. Adhesion of Antireflective Coatings in Multijunction Photovoltaics: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Brock, Ryan; Dauskardt, Reinhold H.; Miller, David C.

    2016-06-16

    The development of a new composite dual cantilever beam (cDCB) thin-film adhesion testing method is reported, which allows the measurement of adhesion on the fragile thin substrates used in multijunction photovoltaics. We address the adhesion of several antireflective coating systems on multijunction cells. By varying interface chemistry and morphology, we demonstrate the ensuing effects on adhesion and help to develop an understanding of how high adhesion can be achieved, as adhesion values ranging from 0.5 J/m2 to 10 J/m2 were measured. Damp Heat (85 degrees C/85% RH) was used to invoke degradation of interfacial adhesion. We show that even with germanium substrates that fracture easily, quantitative measurements of adhesion can still be made at high test yield. The cDCB test is discussed as an important new methodology, which can be broadly applied to any system that makes use of thin, brittle, or otherwise fragile substrates.

  9. Laser-induced damage to thin film dielectric coatings

    International Nuclear Information System (INIS)

    Walker, T.W.

    1980-01-01

    The laser-induced damage thresholds of dielectric thin film coatings have been found to be more than an order of magnitude lower than the bulk material damage thresholds. Prior damage studies have been inconclusive in determining the damage mechanism which is operative in thin films. A program was conducted in which thin film damage thresholds were measured as a function of laser wavelength (1.06 μm, 0.53 μm, 0.35 μm and 0.26 μm), laser pulse length (5 and 15 nanoseconds), film materials and film thickness. The large matrix of data was compared to predictions given by avalanche ionization, multiphoton ionization and impurity theories of laser damage. When Mie absorption cross-sections and the exact thermal equations were included into the impurity theory excellent agreement with the data was found. The avalanche and multiphoton damage theories could not account for most parametric variations in the data. For example, the damage thresholds for most films increased as the film thickness decreased and only the impurity theory could account for this behavior. Other observed changes in damage threshold with changes in laser wavelength, pulse length and film material could only be adequately explained by the impurity theory. The conclusion which results from this study is that laser damage in thin film coatings results from absorbing impurities included during the deposition process

  10. Metallic and Ceramic Thin Film Thermocouples for Gas Turbine Engines

    Directory of Open Access Journals (Sweden)

    Otto J. Gregory

    2013-11-01

    Full Text Available Temperatures of hot section components in today’s gas turbine engines reach as high as 1,500 °C, making in situ monitoring of the severe temperature gradients within the engine rather difficult. Therefore, there is a need to develop instrumentation (i.e., thermocouples and strain gauges for these turbine engines that can survive these harsh environments. Refractory metal and ceramic thin film thermocouples are well suited for this task since they have excellent chemical and electrical stability at high temperatures in oxidizing atmospheres, they are compatible with thermal barrier coatings commonly employed in today’s engines, they have greater sensitivity than conventional wire thermocouples, and they are non-invasive to combustion aerodynamics in the engine. Thin film thermocouples based on platinum:palladium and indium oxynitride:indium tin oxynitride as well as their oxide counterparts have been developed for this purpose and have proven to be more stable than conventional type-S and type-K thin film thermocouples. The metallic and ceramic thin film thermocouples described within this paper exhibited remarkable stability and drift rates similar to bulk (wire thermocouples.

  11. Flexible thin film magnetoimpedance sensors

    International Nuclear Information System (INIS)

    Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-01-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  12. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  13. Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

    International Nuclear Information System (INIS)

    Lee, Se-Won; Cho, Won-Ju

    2012-01-01

    The effects of annealing temperatures and high-k gate dielectric materials on the amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) were investigated using pseudo-metal-oxide semiconductor transistors (Ψ-MOSFETs), a method without conventional source/drain (S/D) layer deposition. Annealing of the a-IGZO film was carried out at 150 - 900 .deg. C in a N 2 ambient for 30 min. As the annealing temperature was increased, the electrical characteristics of Ψ-MOSFETs on a-IGZO were drastically improved. However, when the annealing temperature exceeded 700 .deg. C, a deterioration of the MOS parameters was observed, including a shift of the threshold voltage (V th ) in a negative direction, an increase in the subthreshold slope (SS) and hysteresis, a decrease in the field effect mobility (μ FE ), an increase in the trap density (N t ), and a decrease in the on/off ratio. Meanwhile, the high-k gate dielectrics enhanced the performance of a-IGZO Ψ-MOSFETs. The ZrO 2 gate dielectrics particularly exhibited excellent characteristics in terms of SS (128 mV/dec), μ FE (10.2 cm -2 /V·s), N t (1.1 x 10 12 cm -2 ), and on/off ratio (5.3 x 10 6 ). Accordingly, the Ψ-MOSFET structure is a useful method for rapid evaluation of the effects of the process and the material on a-IGZO TFTs without a conventional S/D layer deposition.

  14. P-type CuxS thin films: Integration in a thin film transistor structure

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

    2013-01-01

    Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

  15. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Unknown

    tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

  16. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  17. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  18. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  19. Field ion microscope studies on thin films

    International Nuclear Information System (INIS)

    Cavaleru, A.; Scortaru, A.

    1976-01-01

    A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)

  20. Raman spectroscopy of optical properties in CdS thin films

    Directory of Open Access Journals (Sweden)

    Trajić J.

    2015-01-01

    Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003

  1. Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

    International Nuclear Information System (INIS)

    Barhdadi, A.; Karbal, S.; M'Gafad, N.; Benmakhlouf, A.; Chafik El Idrissi, M.; Aka, B.M.

    2006-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author) [fr

  2. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  3. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  4. Magnesium growth in magnesium deuteride thin films during deuterium desorption

    Energy Technology Data Exchange (ETDEWEB)

    Checchetto, R., E-mail: riccardo.checchetto@unitn.it [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Miotello, A. [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Mengucci, P.; Barucca, G. [Dipartimento di Fisica e Ingegneria dei Materiali e del Territorio, Università Politecnica delle Marche, I-60131 Ancona (Italy)

    2013-12-15

    Highlights: ► Highly oriented Pd-capped magnesium deuteride thin films. ► The MgD{sub 2} dissociation was studied at temperatures not exceeding 100 °C. ► The structure of the film samples was analyzed by XRD and TEM. ► The transformation is controlled by the re-growth velocity of the Mg layers. ► The transformation is thermally activated, activation energy value of 1.3 ± 0.1 eV. -- Abstract: Pd- capped nanocrystalline magnesium thin films having columnar structure were deposited on Si substrate by e-gun deposition and submitted to thermal annealing in D{sub 2} atmosphere to promote the metal to deuteride phase transformation. The kinetics of the reverse deuteride to metal transformation was studied by Thermal Desorption Spectroscopy (TDS) while the structure of the as deposited and transformed samples was analyzed by X-rays diffraction and Transmission Electron Microscopy (TEM). In Pd- capped MgD{sub 2} thin films the deuteride to metal transformation begins at the interface between un-reacted Mg and transformed MgD{sub 2} layers. The D{sub 2} desorption kinetics is controlled by MgD{sub 2}/Mg interface effects, specifically the re-growth velocity of the Mg layers. The Mg re-growth has thermally activated character and shows an activation energy value of 1.3 ± 0.1 eV.

  5. Progress in thin film techniques

    International Nuclear Information System (INIS)

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  6. BDS thin film damage competition

    Science.gov (United States)

    Stolz, Christopher J.; Thomas, Michael D.; Griffin, Andrew J.

    2008-10-01

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  7. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  8. High temperature superconductor thin films

    International Nuclear Information System (INIS)

    Correra, L.

    1992-01-01

    Interdisciplinary research on superconducting oxides is the main focus of the contributors in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved. The papers are presented in five chapters, subsequently on properties, film growth and processing, substrates and multilayers, structural characterization, and applications

  9. SnO{sub 2} thin films morphological and optical properties in terms of the Boubaker Polynomials Expansion Scheme BPES-related Opto-Thermal Expansivity {psi}{sub AB}

    Energy Technology Data Exchange (ETDEWEB)

    Amlouk, A.; Boubaker, K. [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Amlouk, M., E-mail: mmbb11112000@yahoo.f [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia)

    2010-02-04

    In this study, SnO{sub 2} thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (T{sub s} = 440 {sup o}C). The precursors were methanol CH{sub 4}O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity {psi}{sub AB}. The obtained value: {psi}{sub AB} {approx} 23.4 m{sup 3} s{sup -1} helped situating the performance of the as-grown SnO{sub 2} compound among most known PV-T oxides like ZnO and TiO{sub 2}.

  10. Effects of substrate temperature on sprayed ZnO thin films optical and morphological properties in terms of Amlouk-Boubaker opto-thermal expansivity psi{sub AB}

    Energy Technology Data Exchange (ETDEWEB)

    Amlouk, A.; Boubaker, K. [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Amlouk, M., E-mail: mmbb11112000@yahoo.f [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia)

    2009-08-12

    In this study, ZnO thin films have been grown using spray pyrolysis technique on glass substrates under various substrate temperature (400, 420, 440, 460, 480 and 500 deg. C). The Precursors were Propan-2-ol C{sub 3}H{sub 8}O and zinc acetate zinc Zn(CH{sub 3}CO{sub 2}){sub 2} in acidified medium (acetic acid CH{sub 3}CO{sub 2}H, pH = 5). XRD analyses yielded a strong (0 0 2) X-ray diffraction line for low substrate temperatures (400-420 deg. C). This c-axis preferential orientation was not observed for substrate temperature beyond 440 deg. C. Atomic Force Microscopy (AFM) analyses monitored clusters with variable shapes (pyramidal for high temperatures and rounded concentrated ones for temperatures below 440 deg. C). Finally, the optical measurements were carried out via transmittance T(lambda) and reflectance R(lambda) spectra inside 250-2500 nm domain. Thanks to optical measurements, the conjoint optical and thermal properties were deduced using the Amlouk-Boubaker opto-thermal expansively psi{sub AB}.

  11. Improved electrical properties of La{sub 2/3}Ba{sub 1/3}MnO{sub 3}:Ag{sub 0.04} thin films by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiang; Yin, Xue-Peng; Chen, Qing-Ming; Zhang, Hui; Zhang, Shao-Chun [Kunming University of Science and Technology, Faculty of Material Science and Engineering, Kunming, Yunnan (China)

    2014-09-15

    La{sub 2/3}Ba{sub 1/3}MnO{sub 3}:Ag{sub 0.04} (LBMO:Ag{sub 0.04}) thin films were prepared on single crystalline (001)-orientated LaAlO{sub 3} substrates by pulsed laser deposition technique. Thermal annealing with temperatures of 780, 800 and 820 C has been investigated to improve electrical properties of the films. All the samples are shown along the (00l) orientation in rhombohedral structure with R anti 3c space group. With thermal annealing temperature increasing, insulator-metal transition temperature (T{sub p}) and resistivity at T{sub p} (ρ{sub T{sub p}}) of the epilayer reach optimal value of 288 K and 0.03 Ω.cm, respectively. The electrical properties improvement of the LBMO:Ag{sub 0.04} films is due to an improved film crystallization, oxygen balance and photon scattering suppression. The fitting curves show that the region of ferro-magnetic metallic (FM, T < T{sub p}) is fitted with grain/domain boundary, electron-electron and magnon scattering mechanism, as well as the region of para-magnetic insulating (PI, T > T{sub p}) is fitted with adiabatic small polaron hopping mechanism. (orig.)

  12. Photoluminescence of electron beam evaporated CaS:Bi thin films

    CERN Document Server

    Smet, P F; Poelman, D R; Meirhaeghe, R L V

    2003-01-01

    For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

  13. Nanostructured refractory thin films for solar applications

    Science.gov (United States)

    Ollier, E.; Dunoyer, N.; Dellea, O.; Szambolics, H.

    2014-08-01

    Selective solar absorbers are key elements of all solar thermal systems. Solar thermal panels and Concentrated Solar Power (CSP) systems aim respectively at producing heat and electricity. In both cases, a surface receives the solar radiation and is designed to have the highest optical absorption (lowest optical reflectivity) of the solar radiation in the visible wavelength range where the solar intensity is the highest. It also has a low emissivity in the infrared (IR) range in order to avoid radiative thermal losses. Current solutions in the state of the art usually consist in deposited interferential thin films or in cermets [1]. Structured surfaces have been proposed and have been simulated because they are supposed to be more efficient when the solar radiation is not normal to the receiving surface and because they could potentially be fabricated with refractory materials able to sustain high operating temperatures. This work presents a new method to fabricate micro/nanostructured surfaces on molybdenum (refractory metal with a melting temperature of 2623°C). This method now allows obtaining a refractory selective surface with an excellent optical selectivity and a very high absorption in the visible range. This high absorption performance was obtained by achieving a double structuration at micro and nano scales thanks to an innovative process flow.

  14. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    OpenAIRE

    W. M. Roach; D. B. Beringer; J. R. Skuza; W. A. Oliver; C. Clavero; C. E. Reece; R. A. Lukaszew

    2012-01-01

    Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic stu...

  15. Parametric study of thin film evaporation from nanoporous membranes

    Science.gov (United States)

    Wilke, Kyle L.; Barabadi, Banafsheh; Lu, Zhengmao; Zhang, TieJun; Wang, Evelyn N.

    2017-10-01

    The performance and lifetime of advanced electronics are often dictated by the ability to dissipate heat generated within the device. Thin film evaporation from nanoporous membranes is a promising thermal management approach, which reduces the thermal transport distance across the liquid film while also providing passive capillary pumping of liquid to the evaporating interface. In this work, we investigated the dependence of thin film evaporation from nanoporous membranes on a variety of geometric parameters. Anodic aluminum oxide membranes were used as experimental templates, where pore radii of 28-75 nm, porosities of 0.1-0.35, and meniscus locations down to 1 μm within the pore were tested. We demonstrated different heat transfer regimes and observed more than an order of magnitude increase in dissipated heat flux by operating in the pore-level evaporation regime. The pore diameter had little effect on pore-level evaporation performance due to the negligible conduction resistance from the pore wall to the evaporating interface. The dissipated heat flux scaled with porosity as the evaporative area increased. Furthermore, moving the meniscus as little as 1 μm into the pore decreased the dissipated heat flux by more than a factor of two due to the added resistance to vapor escaping the pore. The experimental results elucidate thin film evaporation from nanopores and confirm findings of recent modeling efforts. This work also provides guidance for the design of future thin film evaporation devices for advanced thermal management. Furthermore, evaporation from nanopores is relevant to water purification, chemical separations, microfluidics, and natural processes such as transpiration.

  16. Macro stress mapping on thin film buckling

    Energy Technology Data Exchange (ETDEWEB)

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  17. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  18. Thermal phase separation of ZrSiO4 thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors

    Science.gov (United States)

    Lok, R.; Kaya, S.; Yilmaz, E.

    2018-05-01

    In this work, the thermal phase separation and annealing optimization of ZrSiO4 thin films have been carried out. Following annealing optimization, the frequency-dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors were investigated in detail. The chemical evolution of the films under various annealing temperatures was determined by Fourier transform infrared spectroscopy (FTIR) measurements. The phase separation was determined by x-ray diffraction (XRD) measurements. The electrical parameters were determined via the capacitance–voltage (C–V), conductance–voltage (G/ω) and leakage-current–voltage (Ig–Vg ). The results demonstrate that zirconium silicate formations are present at 1000 °C annealing with the SiO2 interfacial layer. The film was in amorphous form after annealing at 250 °C. The tetragonal phases of ZrO2 were obtained after annealing at 500 °C. When the temperature approaches 750 °C, transitions from the tetragonal phase to the monoclinic phase were observed. The obtained XRD peaks after 1000 °C annealing matched the crystalline peaks of ZrSiO4. This means that the crystalline zirconium dioxide in the structure has been converted into a crystalline silicate phase. The interface states increased to 5.71 × 1010 and the number of border traps decreased to 7.18 × 1010 cm‑2 with the increasing temperature. These results indicate that an excellent ZrSiO4/Si interface has been fabricated. The order of the leakage current varied from 10‑9 Acm‑2 to 10‑6 Acm‑2. The MOS capacitor fabricated with the films annealed at 1000 °C shows better behavior in terms of its structural, chemical and electrical properties. Hence, detailed frequency-dependent electrical characteristics were performed for the ZrSiO4 thin film annealed at 1000 °C. Very slight capacitance variations were observed under the frequency variations. This shows that the density of frequency-dependent charges is very low at the ZrSiO4/Si interface. The

  19. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP

    International Nuclear Information System (INIS)

    Martil, I.; Prado, A. del; San Andres, E.; Gonzalez Diaz, G.; Martinez, F.L.

    2003-01-01

    We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiN x :H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions (defined in this article as the nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) to N-rich (x=1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (x=1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiN x :H/semiconductor devices with Si, In 0.53 Ga 0.47 As, and InP. After RTA treatments, the electrical properties of the three different SiN x :H/semiconductor interfaces can be explained, noting the microstructural modifications that SiN x :H experiences upon annealing

  20. Solid thin film materials for use in thin film charge-coupled devices

    International Nuclear Information System (INIS)

    Lynch, S.J.

    1983-01-01

    Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

  1. Specular Andreev reflection in thin films of topological insulators

    Science.gov (United States)

    Majidi, Leyla; Asgari, Reza

    2016-05-01

    We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.

  2. Structures and Elastic Moduli of Polymer Nanocomposite Thin Films

    Science.gov (United States)

    Yuan, Hongyi; Karim, Alamgir; University of Akron Team

    2014-03-01

    Polymeric thin films generally possess unique mechanical and thermal properties due to confinement. In this study we investigated structures and elastic moduli of polymer nanocomposite thin films, which can potentially find wide applications in diverse areas such as in coating, permeation and separation. Conventional thermoplastics (PS, PMMA) and biopolymers (PLA, PCL) were chosen as polymer matrices. Various types of nanoparticles were used including nanoclay, fullerene and functionalized inorganic particles. Samples were prepared by solvent-mixing followed by spin-coating or flow-coating. Film structures were characterized using X-ray scattering and transmission electron microscopy. Elastic moduli were measured by strain-induced elastic buckling instability for mechanical measurements (SIEBIMM), and a strengthening effect was found in certain systems due to strong interaction between polymers and nanoparticles. The effects of polymer structure, nanoparticle addition and film thickness on elastic modulus will be discussed and compared with bulk materials.

  3. Liquid crystals for organic thin-film transistors

    Science.gov (United States)

    Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

    2015-04-01

    Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

  4. Photoconductivity study of acid on Zinc phthalocyanine pyridine thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Sukhwinder, E-mail: ss7667@gmail.com [Department of Physics, Govt. College for Girls, Ludhiana (India); Saini, G. S. S.; Tripathi, S. K. [Department of Physics, Panjab University, Chandigarh (India)

    2016-05-06

    The Metal Phthalocyanine (MPc) have attracted much interest because of chemical and high thermal stability. Molecules forming a crystal of MPc are held together by weak attractive Vander Waals forces. Organic semiconductors have π conjugate bonds which allow electrons to move via π-electron cloud overlaps. Conduction mechanisms for organic semiconductor are mainly through tunneling; hopping between localized states, mobility gaps, and phonon assisted hopping. The photo conductivity of thin films of these complexes changes when exposed to oxidizing and reducing gases. Arrhenius plot is used to find the thermal activation energy in the intrinsic region and impurity scattering region. Arrhenius plotsare used to find the thermal activation energy.

  5. Physical properties and characterization of Ag doped CdS thin films

    International Nuclear Information System (INIS)

    Shah, N.A.; Nazir, A.; Mahmood, W.; Syed, W.A.A.; Butt, S.; Ali, Z.; Maqsood, A.

    2012-01-01

    Highlights: ► CdS thin films were grown. ► By ion exchange, Ag was doped. ► Physical properties were investigated. - Abstract: Thin films of cadmium sulfide with very well defined preferential orientation and relatively high absorption coefficient were fabricated by thermal evaporation technique. The research is focused to the fabrication and characterization of the compositional data of CdS thin films obtained by using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray spectroscopy. The optical properties were studied by using a UV-VIS-NIR spectrophotometer. The effects of silver-doping by ion exchange process on the properties of as-deposited CdS thin films have been investigated.

  6. Growth, Properties and Applications of Mo Ox Thin-Films Deposited by Reactive Sputtering

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis

    properties of metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties, and thus also their integration in novel optoelectronic devices. In this work, MoOx thin-films with various different phases and compositions were prepared by direct-current reactive...... molecules DBP and C70 are also covered in this work. The devices show interesting characteristics for very thin layers of the as-deposited MoOx films, displaying similar device efficiencies as those of in situ prepared MoOx thin-films formed from thermal evaporation. For the annealed MoOx films......Transition metal-oxide (TMOs) thin-films are commonly used in optoelectronic devices such as in photovoltaics and light emitting diodes, using both organic, inorganic and hybrid technologies. In such devices, TMOs typically act as an interfacial layer, where its functionality is to facilitate hole...

  7. Platinum containing amorphous hydrogenated carbon (a-C:H/Pt) thin films as selective solar absorbers

    International Nuclear Information System (INIS)

    Lan, Yung-Hsiang; Brahma, Sanjaya; Tzeng, Y.H.; Ting, Jyh-Ming

    2014-01-01

    We have investigated a double-cermet structured thin film in which an a-C:H thin film was used as an anti-reflective (AR) layer and two platinum-containing amorphous hydrogenated carbon (a-C:H/Pt) thin films were used as the double cermet layers. A reactive co-sputter deposition method was used to prepare both the anti-reflective and cermet layers. Effects of the target power and heat treatment were studied. The obtained films were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy. The optical absorptance and emittance of the as deposited and annealed films were determined using UV–vis-NIR spectroscopy. We show that the optical absorptance of the resulting double-cermet structured thin film is as high as 96% and remains to be 91% after heat treatment at 400 °C, indicating the thermal stability of the film

  8. Surface, interface and thin film characterization of nano-materials using synchrotron radiation

    International Nuclear Information System (INIS)

    Kimura, Shigeru; Kobayashi, Keisuke

    2005-01-01

    From the results of studies in the nanotechnology support project of the Ministry of Education, Culture, Sports, Science and Technology of Japan, several investigations on the surface, interface and thin film characterization of nano-materials are described; (1) the MgB 2 thin film by X-ray diffraction, (2) the magnetism of the Pt thin film on a Co film by X-ray magnetic circular dichroism measurement, (3) the structure and physical properties of oxygen molecules absorbed in a micro hole of the cheleted polymer crystal by the direct observation in X-ray powder diffraction, and (4) the thin film gate insulator with a large dielectric constant, thermally treated HfO 2 /SiO 2 /Si, by X-ray photoelectron spectroscopy. (M.H.)

  9. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  10. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  11. Thin films of copper antimony sulfide: A photovoltaic absorber material

    Energy Technology Data Exchange (ETDEWEB)

    Ornelas-Acosta, R.E. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Shaji, S. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico)

    2015-01-15

    Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

  12. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Ali, N., E-mail: nisar.ali@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Department of Physics, Govt. Post Graduate Jehanzeb College Saidu Sharif, Swat, 19200 (Pakistan); Hussain, A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Wan Shamsuri, W.N. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Fu, Y.Q., E-mail: richard.fu@northumbria.ac.uk [Department of Physics and Electrical Engineering, Faculty of Engineering & Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST (United Kingdom)

    2016-12-30

    Highlights: • A new and novel material for solar cell applications is demonstrated as a replacement for toxic and expansive compounds. • The materials used in this compound are abundant and low cost. • Compound exhibit unusual optical and electrical properties. • The band gap was found to be comparable with that of GaAs. - Abstract: Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs – one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  13. Synthesis and characterization of Cu–Al–Ni shape memory alloy multilayer thin films

    International Nuclear Information System (INIS)

    Gómez-Cortés, J.F.; San Juan, J.; López, G.A.; Nó, M.L.

    2013-01-01

    Among active materials, shape memory alloys are well recognized for their work output density. Because of that, these alloys have attracted much attention to be used in micro/nano electromechanical systems. In the present work, the electron beam evaporation technique has been used to growth, by a multilayer method, two shape memory alloy thin films with different Cu–Al–Ni composition. Multilayers have been further thermally treated to produce the alloys by solid solution diffusion. The produced multilayers have been characterized and the presence of the martensite phase in the obtained thin films was studied. Furthermore, the influence of two different coatings onto the Si substrates, namely Si/SiO 2 and Si/Si 3 N 4 , was investigated. Mechanically stable, not detaching from the substrates, Cu–Al–Ni shape memory alloy thin films, about 1 micrometre thick, showing a martensitic transformation have been produced. - Highlights: ► Multilayer thin films of Cu–Al–Ni shape memory alloys produced by e-beam evaporation. ► SiN X 200 nm thick coating is good for high quality Cu–Al–Ni shape memory thin films. ► Thermal treatment renders Cu–Al–Ni multilayer in homogeneous martensite thin film

  14. Synthesis and characterization of Cu–Al–Ni shape memory alloy multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gómez-Cortés, J.F. [Dpt. Física Materia Condensada, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain); San Juan, J., E-mail: jose.sanjuan@ehu.es [Dpt. Física Materia Condensada, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain); López, G.A.; Nó, M.L. [Dpt. Física Aplicada II, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain)

    2013-10-01

    Among active materials, shape memory alloys are well recognized for their work output density. Because of that, these alloys have attracted much attention to be used in micro/nano electromechanical systems. In the present work, the electron beam evaporation technique has been used to growth, by a multilayer method, two shape memory alloy thin films with different Cu–Al–Ni composition. Multilayers have been further thermally treated to produce the alloys by solid solution diffusion. The produced multilayers have been characterized and the presence of the martensite phase in the obtained thin films was studied. Furthermore, the influence of two different coatings onto the Si substrates, namely Si/SiO{sub 2} and Si/Si{sub 3}N{sub 4}, was investigated. Mechanically stable, not detaching from the substrates, Cu–Al–Ni shape memory alloy thin films, about 1 micrometre thick, showing a martensitic transformation have been produced. - Highlights: ► Multilayer thin films of Cu–Al–Ni shape memory alloys produced by e-beam evaporation. ► SiN{sub X} 200 nm thick coating is good for high quality Cu–Al–Ni shape memory thin films. ► Thermal treatment renders Cu–Al–Ni multilayer in homogeneous martensite thin film.

  15. a Brief Survey on Basic Properties of Thin Films for Device Application

    Science.gov (United States)

    Rao, M. C.; Shekhawat, M. S.

    Thin film materials are the key elements of continued technological advances made in the fields of optoelectronic, photonic and magnetic devices. Thin film studies have directly or indirectly advanced many new areas of research in solid state physics and chemistry which are based on phenomena uniquely characteristic of the thickness, geometry and structure of the film. The processing of materials into thin films allows easy integration into various types of devices. Thin films are extremely thermally stable and reasonably hard, but they are fragile. On the other hand organic materials have reasonable thermal stability and are tough, but are soft. Thin film mechanical properties can be measured by tensile testing of freestanding films and by the micro beam cantilever deflection technique, but the easiest way is by means of nanoindentation. Optical experiments provide a good way of examining the properties of semiconductors. Particularly measuring the absorption coefficient for various energies gives information about the band gaps of the material. Thin film materials have been used in semiconductor devices, wireless communications, telecommunications, integrated circuits, rectifiers, transistors, solar cells, light-emitting diodes, photoconductors and light crystal displays, lithography, micro- electromechanical systems (MEMS) and multifunctional emerging coatings, as well as other emerging cutting technologies.

  16. Thin film description by wavelet coefficients statistics

    Czech Academy of Sciences Publication Activity Database

    Boldyš, Jiří; Hrach, R.

    2005-01-01

    Roč. 55, č. 1 (2005), s. 55-64 ISSN 0011-4626 Grant - others:GA UK(CZ) 173/2003 Institutional research plan: CEZ:AV0Z10750506 Keywords : thin films * wavelet transform * descriptors * histogram model Subject RIV: BD - Theory of Information Impact factor: 0.360, year: 2005 http://library.utia.cas.cz/separaty/2009/ZOI/boldys-thin film description by wavelet coefficients statistics .pdf

  17. Nanosphere lithography applied to magnetic thin films

    Science.gov (United States)

    Gleason, Russell

    Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

  18. Optically Immersed Bolometer IR Detectors Based on V2O5 Thin Films with Polyimide Thermal Impedance Control Layer for Space Applications

    Science.gov (United States)

    Sumesh, M. A.; Thomas, Beno; Vijesh, T. V.; Mohan Rao, G.; Viswanathan, M.; Karanth, S. P.

    2018-01-01

    Optically immersed bolometer IR detectors were fabricated using electron beam evaporated vanadium oxide as the sensing material. Spin-coated polyimide was used as medium to optically immerse the sensing element to the flat surface of a hemispherical germanium lens. This optical immersion layer also serves as the thermal impedance control layer and decides the performance of the devices in terms of responsivity and noise parameters. The devices were packaged in suitable electro-optical packages and the detector parameters were studied in detail. Thermal time constant varies from 0.57 to 6.0 ms and responsivity from 75 to 757 V W-1 corresponding to polyimide thickness in the range 2 to 70 μm for a detector bias of 9 V in the wavelength region of 14-16 μm. Highest D* obtained was 1.2×108 cmHz1/2 W-1. Noise equivalent temperature difference (NETD) of 20 mK was achieved for devices with polyimide thickness more than 32 μm. The figure of merit, NETD × τ product which describes trade-off between thermal time constant and sensitivity is also extensively studied for devices having different thickness of thermal impedance layers.

  19. Thermal stability of alumina thin films containing γ-Al.sub.2./sub.O.sub.3./sub. phase prepared by reactive magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Musil, Jindřich; Blažek, J.; Zeman, P.; Prokšová, Š.; Šašek, M.; Čerstvý, R.

    2010-01-01

    Roč. 257, č. 3 (2010), s. 1058-1062 ISSN 0169-4332 Institutional research plan: CEZ:AV0Z10100520 Keywords : Al 2 O 3 (alumina) * annealing * thermal stability * nanocrystalline material * sputtering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.795, year: 2010

  20. A Method for Suppressing Superconductivity of Thin Films

    Science.gov (United States)

    Suppula, Tarmo; Pekola, Jukka; Kauppinen, Juha

    2003-03-01

    We have developed a method for suppressing superconductivity of thin films. Thin stripes of cobalt grown by e-gun evaporation and patterned by e-beam lithography were placed in the vicinity of aluminium thin film structures. The cobalt stripes were magnetized at 4.2 K with a superconducting coil and the remanence suppressed superconductivity of the Al stripe at temperatures down to 50 mK at least. The magnetization remained in thermal cycling and in a longer storage at room temperature. Motivation for this work is the Coulomb Blockade Thermometer(CBT)^1 which has to be in a normal state to operate. The CBT sensor contains aluminium which is superconducting at temperatures below 1.4 K. An external magnetic field is not always available or acceptable in cryostats. A small grain of permanent magnet mounted to the sensor is another solution, but suspicious if the sensor is put in strong magnetic fields or if "zero field" environment is required. We have shown that suitably patterned and magnetized Co stripes in the vicinity of tunnel junctions of the CBT can solve this problem. The amount of magnetic material in the sensor, as well as the stray field, is very small. This technique may be useful in other low temperature thin film devices also. 1) Product of Nanoway Ltd.

  1. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  2. Deposition techniques for the preparation of thin film nuclear targets

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1987-07-01

    This review commences with a brief description of the basic principles that regulate vacuum evaporation and the physical processes involved in thin film formation, followed by a description of the experimental methods used. The principle methods of heating the evaporant are detailed and the means of measuring and controlling the film thickness are elucidated. Types of thin film nuclear targets are considered and various film release agents are listed. Thin film nuclear target behaviour under ion-bombardment is described and the dependence of nuclear experimental results upon target thickness and uniformity is outlined. Special problems associated with preparing suitable targets for lifetime measurements are discussed. The causes of stripper-foil thickening and breaking under heavy-ion bombardme