Critical heat flux and exit film flow rate in a flow boiling system

International Nuclear Information System (INIS)

Ueda, Tatsuhiro; Isayama, Yasushi

1981-01-01

The critical heat flux in a flowing boiling system is an important problem in the evaporating tubes with high thermal load such as nuclear reactors and boilers, and gives the practical design limit. When the heat flux in uniformly heated evaporating tubes is gradually raised, the tube exit quality increases, and soon, the critical heat flux condition arises, and the wall temperature near tube exit rises rapidly. In the region of low exit quality, the critical heat flux condition is caused by the transition from nucleating boiling, and in the region of high exit quality, it is caused by dry-out. But the demarcation of both regions is not clear. In this study, for the purpose of obtaining the knowledge concerning the critical heat flux condition in a flowing boiling system, the relation between the critical heat flux and exit liquid film flow rate was examined. For the experiment, a uniformly heated vertical tube supplying R 113 liquid was used, and the measurement in the range of higher heating flux and mass velocity than the experiment by Ueda and Kin was carried out. The experimental setup and experimental method, the critical heat flux and exit quality, the liquid film flow rate at heating zone exit, and the relation between the critical heat flux and the liquid film flow rate at exit are described. (Kako, I.)

Nucleation of fcc Ta when heating thin films

International Nuclear Information System (INIS)

Janish, Matthew T.; Mook, William M.; Carter, C. Barry

2015-01-01

Thin tantalum films have been studied during in situ heating in a transmission electron microscope. Diffraction patterns from the as-deposited films were typical of amorphous materials. Crystalline grains were observed to form when the specimen was annealed in situ at 450 °C. Particular attention was addressed to the formation and growth of grains with the face-centered cubic (fcc) crystal structure. These observations are discussed in relation to prior work on the formation of fcc Ta by deformation and during thin film deposition

Critical heat flux correlation for thin rectangular channels

International Nuclear Information System (INIS)

Tanaka, Futoshi; Mishima, Kaichiro; Hibiki, Takashi

2007-01-01

The effect of heated length on Critical heat flux (CHF) in thin rectangular channels was studied based on CHF data obtained under atmospheric pressure. CHF in small channels has been widely studied in the past decades but most of the studies are related to CHF in round tubes. Although basic mechanisms of burnout in thin rectangular channels are similar to tubes, applicability of CHF correlations for tubes to rectangular channels are questionable since CHF in rectangular channels are affected by the existence of non-heated walls and the non-circular geometry of channel circumference. Several studies of CHF in thin rectangular channels have been reported in relation to thermal hydraulic design of research reactors and neutron source targets and CHF correlations have been proposed, but the studies mostly focus on CHFs under geometrical conditions of the application of interest. In his study, existing CHF data obtained in thin rectangular channels were collected and the effect of heated length on CHF was examined. Existing CHF correlations were verified with positive quality flow CHF data but none of the correlations successfully reproduced the CHF for a wide range of heated length. A new CHF correlation for qualify region applicable to a wide range of heated length was developed based on the collected data. (author)

Heat flux microsensor measurements and calibrations

Science.gov (United States)

Terrell, James P.; Hager, Jon M.; Onishi, Shinzo; Diller, Thomas E.

1992-01-01

A new thin-film heat flux gage has been fabricated specifically for severe high temperature operation using platinum and platinum-10 percent rhodium for the thermocouple elements. Radiation calibrations of this gage were performed at the AEDC facility over the available heat flux range (approx. 1.0 - 1,000 W/cu cm). The gage output was linear with heat flux with a slight increase in sensitivity with increasing surface temperature. Survivability of gages was demonstrated in quench tests from 500 C into liquid nitrogen. Successful operation of gages to surface temperatures of 750 C has been achieved. No additional cooling of the gages is required because the gages are always at the same temperature as the substrate material. A video of oxyacetylene flame tests with real-time heat flux and temperature output is available.

Thin film ceramic thermocouples

Science.gov (United States)

Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

2011-01-01

A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

Local imaging of magnetic flux in superconducting thin films

International Nuclear Information System (INIS)

Shapoval, Tetyana

2010-01-01

Local studies of magnetic flux line (vortex) distribution in superconducting thin films and their pinning by natural and artificial defects have been performed using low-temperature magnetic force microscopy (LT-MFM). Taken a 100 nm thin NbN film as an example, the depinning of vortices from natural defects under the influence of the force that the MFM tip exerts on the individual vortex was visualized and the local pinning force was estimated. The good agreement of these results with global transport measurements demonstrates that MFM is a powerful and reliable method to probe the local variation of the pinning landscape. Furthermore, it was demonstrated that the presence of an ordered array of 1-μm-sized ferromagnetic permalloy dots being in a magneticvortex state underneath the Nb film significantly influences the natural pinning landscape of the superconductor leading to commensurate pinning effects. This strong pinning exceeds the repulsive interaction between the superconducting vortices and allows vortex clusters to be located at each dot. Additionally, for industrially applicable YBa 2 Cu 3 O 7-δ thin films the main question discussed was the possibility of a direct correlation between vortices and artificial defects as well as vortex imaging on rough as-prepared thin films. Since the surface roughness (droplets, precipitates) causes a severe problem to the scanning MFM tip, a nanoscale wedge polishing technique that allows to overcome this problem was developed. Mounting the sample under a defined small angle results in a smooth surface and a monotonic thickness reduction of the film along the length of the sample. It provides a continuous insight from the film surface down to the substrate with surface sensitive scanning techniques. (orig.)

Heat wave propagation in a thin film irradiated by ultra-short laser pulses

International Nuclear Information System (INIS)

Yoo, Jae Gwon; Kim, Cheol Jung; Lim, C. H.

2004-01-01

A thermal wave solution of a hyperbolic heat conduction equation in a thin film is developed on the basis of the Green's function formalism. Numerical computations are carried out to investigate the temperature response and the propagation of the thermal wave inside a thin film due to a heat pulse generated by ultra-short laser pulses with various laser pulse durations and thickness of the film

Local imaging of magnetic flux in superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Shapoval, Tetyana

2010-01-26

Local studies of magnetic flux line (vortex) distribution in superconducting thin films and their pinning by natural and artificial defects have been performed using low-temperature magnetic force microscopy (LT-MFM). Taken a 100 nm thin NbN film as an example, the depinning of vortices from natural defects under the influence of the force that the MFM tip exerts on the individual vortex was visualized and the local pinning force was estimated. The good agreement of these results with global transport measurements demonstrates that MFM is a powerful and reliable method to probe the local variation of the pinning landscape. Furthermore, it was demonstrated that the presence of an ordered array of 1-{mu}m-sized ferromagnetic permalloy dots being in a magneticvortex state underneath the Nb film significantly influences the natural pinning landscape of the superconductor leading to commensurate pinning effects. This strong pinning exceeds the repulsive interaction between the superconducting vortices and allows vortex clusters to be located at each dot. Additionally, for industrially applicable YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films the main question discussed was the possibility of a direct correlation between vortices and artificial defects as well as vortex imaging on rough as-prepared thin films. Since the surface roughness (droplets, precipitates) causes a severe problem to the scanning MFM tip, a nanoscale wedge polishing technique that allows to overcome this problem was developed. Mounting the sample under a defined small angle results in a smooth surface and a monotonic thickness reduction of the film along the length of the sample. It provides a continuous insight from the film surface down to the substrate with surface sensitive scanning techniques. (orig.)

The role of demagnetizing factors in the occurrence of vortex avalanches in Nb thin films

International Nuclear Information System (INIS)

Colauto, F; Ortiz, W A; Patino, E J; Aprilli, M

2009-01-01

Under specific circumstances, magnetic flux penetrates into superconducting thin films as dendritic flux jumps. The phenomenon has a thermomagnetic origin, where flux motion generates heat that suppresses flux pining and facilitates further flux motion. We have studied the thickness influence on the flux stability for very thin Nb films, 20, 40, 60, and 80 nm, through dc-magnetometry. The thicker the film; the higher is the threshold field where instabilities first take place. Due to the demagnetizing factor in a perpendicular geometry, the effective magnetic field at the border of the film is largely amplified. For thin specimens, a linear dependence between the threshold field and the thickness is expected and has been actually observed. When normalized by the sample aspect ratio, the effective threshold magnetic field is nearly the same for all specimens studied.

The role of demagnetizing factors in the occurrence of vortex avalanches in Nb thin films

Energy Technology Data Exchange (ETDEWEB)

Colauto, F; Ortiz, W A [Grupo de Supercondutividade e Magnetismo, Departamento de Fisica, Universidade Federal de Sao Carlos, C P 676, 13565-905, Sao Carlos, SP (Brazil); Patino, E J; Aprilli, M, E-mail: fcolauto@df.ufscar.b [Laboratoire de Physique des Solides, Universite Paris-Sud, C.N.R.S., 91405 Orsay cedex (France)

2009-03-01

Under specific circumstances, magnetic flux penetrates into superconducting thin films as dendritic flux jumps. The phenomenon has a thermomagnetic origin, where flux motion generates heat that suppresses flux pining and facilitates further flux motion. We have studied the thickness influence on the flux stability for very thin Nb films, 20, 40, 60, and 80 nm, through dc-magnetometry. The thicker the film; the higher is the threshold field where instabilities first take place. Due to the demagnetizing factor in a perpendicular geometry, the effective magnetic field at the border of the film is largely amplified. For thin specimens, a linear dependence between the threshold field and the thickness is expected and has been actually observed. When normalized by the sample aspect ratio, the effective threshold magnetic field is nearly the same for all specimens studied.

Effects of magnetic flux densities on microstructure evolution and magnetic properties of molecular-beam-vapor-deposited nanocrystalline Fe_3_0Ni_7_0 thin films

International Nuclear Information System (INIS)

Cao, Yongze; Wang, Qiang; Li, Guojian; Ma, Yonghui; Du, Jiaojiao; He, Jicheng

2015-01-01

Nanocrystalline Fe_3_0Ni_7_0 (in atomic %) thin films were prepared by molecular-beam-vapor deposition in magnetic fields with different magnetic flux densities. The microstructure evolution of these thin films was studied by atomic force microscopy, transmission electron microscopy, and high resolution transmission electron microscopy; the soft magnetic properties were examined by vibrating sample magnetometer at room temperature. The results show that all our Fe_3_0Ni_7_0 thin films feature an fcc single-phase structure. With increasing magnetic flux density, surface roughness, average particle size and grain size of the thin films decreased, and the short-range ordered clusters (embryos) of thin films increased. Additionally, the magnetic anisotropy in the in-plane and the coercive forces of the thin films gradually reduced with increasing magnetic flux density. - Highlights: • With increasing magnetic flux density, average particle size of films decreased. • With increasing magnetic flux density, surface roughness of thin films decreased. • With increasing magnetic flux density, short-range ordered clusters increased. • With increasing magnetic flux density, the coercive forces of thin films reduced. • With increasing magnetic flux density, soft magnetic properties are improved.

Analysis of Hydrodynamics and Heat Transfer in a Thin Liquid Film Flowing over a Rotating Disk by Integral Method

Science.gov (United States)

Basu, S.; Cetegen, B. M.

2005-01-01

An integral analysis of hydrodynamics and heat transfer in a thin liquid film flowing over a rotating disk surface is presented for both constant temperature and constant heat flux boundary conditions. The model is found to capture the correct trends of the liquid film thickness variation over the disk surface and compare reasonably well with experimental results over the range of Reynolds and Rossby numbers covering both inertia and rotation dominated regimes. Nusselt number variation over the disk surface shows two types of behavior. At low rotation rates, the Nusselt number exhibits a radial decay with Nusselt number magnitudes increasing with higher inlet Reynolds number for both constant wall temperature and heat flux cases. At high rotation rates, the Nusselt number profiles exhibit a peak whose location advances radially outward with increasing film Reynolds number or inertia. The results also compare favorably with the full numerical simulation results from an earlier study as well as with the reported experimental results.

Effect of the heat flux direction on electrical properties of SrBi2Nb2O9 thin films crystallized using a microwave oven

International Nuclear Information System (INIS)

Vasconcelos, J.S.; Vasconcelos, N.S.L.S.; Zanetti, S.M.; Leite, E.R.; Varela, J.A.; Longo, E.

2004-01-01

Ferroelectric SrBi 2 Nb 2 O 9 (SBN) thin films were prepared by the polymeric precursors method and deposited by spin coating onto Pt/Ti/SiO 2 /Si substrate and crystallized using a domestic microwave oven. It was studied the influence of the heat flux direction and the duration of the thermal treatment on the films crystallization. An element with high dielectric loss, a SiC susceptor, was used to absorb the microwave energy and transfers the heat to the film. Influence of the susceptor position to the sample crystallization was verified, the susceptor was placed or below the substrate or above the film. The SBN perovskite phase was observed after a thermal treatment at 700 deg. C for 10 min when the susceptor was placed below the substrate and for 30 min when the susceptor was placed above the film. Electrical measurements revealed that the film crystallized at 700 deg. C for 10 min, with the susceptor placed below the film, presented dielectric constant, dielectric loss, remanent polarization and coercive field of, 67, 0.011, 4.2 μC/cm 2 and 27.5 kV/cm, respectively. When the films were crystallized at 700 deg. C for 30 min, with the susceptor placed above the film, the dielectric constant was 115 and the dissipation factor was around of 0.033, remanent polarization and coercive field were 10.8 μC/cm 2 and 170 kV/cm, respectively

Effects of Post Heat Treatments on ZnO Thin-Films Grown on Zn-coated Teflon Substrates

Energy Technology Data Exchange (ETDEWEB)

Kim, Ikhyun; Nam, Giwoong; Lee, Cheoleon; Kim, Dongwhan; Choi, Hyonkwang; Kim, Yangsoo; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of); Kim, Jin Soo [Chonbuk National University, Jeonju (Korea, Republic of); Kim, Jong Su [Yeungnam University, Gyeongsan (Korea, Republic of); Son, Jeong-Sik [Kyungwoon University, Gumi (Korea, Republic of)

2015-06-15

ZnO thin films were first grown on Zn-coated Teflon substrates using a spin-coating method, with various post-heating temperatures. The structural and optical properties of the ZnO thin films were then investigated using field-effect scanning-electron microscopy, X-ray diffractometry, and photoluminescence (PL) spectroscopy. The surface morphology of these ZnO thin films exhibited dendritic structures. With increasing post-heating temperature, all samples preferentially exhibited preferential c-axis orientation and increased residual tensile stress. All of the films exhibited preferential c-axis orientation, and the residual tensile stress of those increased with increasing post-heating temperature. The near-band-edge emission (NBE) peaks were red-shifted after post-heating treatment at 400 ℃. The intensity of the deep-level emission (DLE) peaks gradually decreased with increasing post- heating temperature. Moreover, the narrowest ‘full width at half maximum’ (FWHM) and the highest intensity ratio of the NBE to the DLE for thin films, were observed after post-heating at 400 ℃. The ZnO thin films fabricated with the 400 ℃ post-heating process provided the highest crystallinity and optical properties.

Enhancement of Heat and Mass Transfer in Mechanically Contstrained Ultra Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kevin Drost; Jim Liburdy; Brian Paul; Richard Peterson

2005-01-01

Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be significantly enhanced by the use of an ultra-thin film gas/liquid contactor. This device employs microtechnology-based structures to mechanically constrain the gas/liquid interface. This technology can be used to form very thin liquid films with a film thickness less then 100 microns while still allowing gas/liquid contact. When the resistance to mass transfer in gas desorption and absorption is dominated by diffusion in the liquid phase the use of extremely thin films (<100 microns) for desorption and absorption can radically reduce the size of a gas desorber or absorber. The development of compact absorbers and desorbers enables the deployment of small heat-actuated absorption heat pumps for distributed space heating and cooling applications, heat-actuated automotive air conditioning, manportable cooling, gas absorption units for the chemical process industry and the development of high capacity CO{sub 2} absorption devices for CO{sub 2} collection and sequestration. The energy

Vibration welding system with thin film sensor

Science.gov (United States)

Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

2014-03-18

A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

Specific heat measurement set-up for quench condensed thin superconducting films.

Science.gov (United States)

Poran, Shachaf; Molina-Ruiz, Manel; Gérardin, Anne; Frydman, Aviad; Bourgeois, Olivier

2014-05-01

We present a set-up designed for the measurement of specific heat of very thin or ultra-thin quench condensed superconducting films. In an ultra-high vacuum chamber, materials of interest can be thermally evaporated directly on a silicon membrane regulated in temperature from 1.4 K to 10 K. On this membrane, a heater and a thermometer are lithographically fabricated, allowing the measurement of heat capacity of the quench condensed layers. This apparatus permits the simultaneous thermal and electrical characterization of successively deposited layers in situ without exposing the deposited materials to room temperature or atmospheric conditions, both being irreversibly harmful to the samples. This system can be used to study specific heat signatures of phase transitions through the superconductor to insulator transition of quench condensed films.

Coupling of near-field thermal radiative heating and phonon Monte Carlo simulation: Assessment of temperature gradient in n-doped silicon thin film

International Nuclear Information System (INIS)

Wong, Basil T.; Francoeur, Mathieu; Bong, Victor N.-S.; Mengüç, M. Pinar

2014-01-01

Near-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density. - Highlights: • This study investigates temperature distribution in an n-doped silicon thin film. • Near-field radiative heating is treated as a volumetric phenomenon. • The temperature gradient is computed using phonon MC simulation. • Temperature of thin film can be approximated as uniform for radiation calculations. • If heat source is a pulsed radiation, a temperature gradient can be established

Quantitative method for measuring heat flux emitted from a cryogenic object

Science.gov (United States)

Duncan, R.V.

1993-03-16

The present invention is a quantitative method for measuring the total heat flux, and of deriving the total power dissipation, of a heat-fluxing object which includes the steps of placing an electrical noise-emitting heat-fluxing object in a liquid helium bath and measuring the superfluid transition temperature of the bath. The temperature of the liquid helium bath is thereafter reduced until some measurable parameter, such as the electrical noise, exhibited by the heat-fluxing object or a temperature-dependent resistive thin film in intimate contact with the heat-fluxing object, becomes greatly reduced. The temperature of the liquid helum bath is measured at this point. The difference between the superfluid transition temperature of the liquid helium bath surrounding the heat-fluxing object, and the temperature of the liquid helium bath when the electrical noise emitted by the heat-fluxing object becomes greatly reduced, is determined. The total heat flux from the heat-fluxing object is determined as a function of this difference between these temperatures. In certain applications, the technique can be used to optimize thermal design parameters of cryogenic electronics, for example, Josephson junction and infrared sensing devices.

Quantitative method for measuring heat flux emitted from a cryogenic object

International Nuclear Information System (INIS)

Duncan, R.V.

1993-01-01

The present invention is a quantitative method for measuring the total heat flux, and of deriving the total power dissipation, of a heat-fluxing object which includes the steps of placing an electrical noise-emitting heat-fluxing object in a liquid helium bath and measuring the superfluid transition temperature of the bath. The temperature of the liquid helium bath is thereafter reduced until some measurable parameter, such as the electrical noise, exhibited by the heat-fluxing object or a temperature-dependent resistive thin film in intimate contact with the heat-fluxing object, becomes greatly reduced. The temperature of the liquid helum bath is measured at this point. The difference between the superfluid transition temperature of the liquid helium bath surrounding the heat-fluxing object, and the temperature of the liquid helium bath when the electrical noise emitted by the heat-fluxing object becomes greatly reduced, is determined. The total heat flux from the heat-fluxing object is determined as a function of this difference between these temperatures. In certain applications, the technique can be used to optimize thermal design parameters of cryogenic electronics, for example, Josephson junction and infrared sensing devices

Heat treatment and aging effect on the structural and optical properties of plasma polymerized 2,6-diethylaniline thin films

International Nuclear Information System (INIS)

Matin, Rummana; Bhuiyan, A.H.

2012-01-01

The monomer, 2,6-diethylaniline has been used to deposit plasma polymerized 2,6-diethylaniline (PPDEA) thin films at room temperature on to glass substrates by a capacitively coupled parallel plate glow discharge reactor. A comparative analysis on the changes of morphological, structural and optical properties of as-deposited, heat treated and aged PPDEA thin films is ascertained. Scanning electron microscopy shows uniform and pinhole free surface of PPDEA thin films and no significant difference in the surface morphology is observed due to heat treatment. Electron dispersive X-ray and Fourier transform infrared spectroscopic investigations indicate some structural rearrangement in PPDEA thin films due to heat treatment. Differential thermal analysis, thermogravimetric analysis and differential thermogravimetric analysis suggest that the PPDEA is thermally stable up to about 580 K. The study on the optical absorption spectra of as-deposited, heat treated and aged PPDEA thin films of different thicknesses lead to the determination of the allowed direct and indirect transition energies ranging from 3.63 to 2.73 and 2.38 to 1.26 eV respectively. Urbach energy, steepness parameter and extinction coefficient are also assessed. It is observed that the optical parameters of as-deposited PPDEA thin films change due to heat treatment and do not change appreciably due to aging. - Highlights: ► Heat treatment and aging effect of plasma polymerized 2,6-diethylaniline thin films. ► The surface morphology of PPDEA is found uniform for all types of sample. ► Heat treatment introduces some elemental and structural rearrangement. ► The thermal stability is found up to about 580 K. ► Optical parameters were changed for heat treatment but not markedly for aging.

Thin-Film Power Transformers

Science.gov (United States)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Bioactive glass and hydroxyapatite thin films obtained by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Gyorgy, E. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania) and Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona, Campus UAB, 08193 Bellaterra (Spain)]. E-mail: egyorgy@icmab.es; Grigorescu, S. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Socol, G. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Janackovic, D. [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Dindune, A. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Kanepe, Z. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Palcevskis, E. [Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Zdrentu, E.L. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania); Petrescu, S.M. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania)

2007-07-31

Bioactive glass (BG), calcium hydroxyapatite (HA), and ZrO{sub 2} doped HA thin films were grown by pulsed laser deposition on Ti substrates. An UV KrF{sup *} ({lambda} = 248 nm, {tau} {>=} 7 ns) excimer laser was used for the multi-pulse irradiation of the targets. The substrates were kept at room temperature or heated during the film deposition at values within the (400-550 deg. C) range. The depositions were performed in oxygen and water vapor atmospheres, at pressure values in the range (5-40 Pa). The HA coatings were heat post-treated for 6 h in a flux of hot water vapors at the same temperature as applied during deposition. The surface morphology, chemical composition, and crystalline quality of the obtained thin films were studied by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The films were seeded for in vitro tests with Hek293 (human embryonic kidney) cells that revealed a good adherence on the deposited layers. Biocompatibility tests showed that cell growth was better on HA than on BG thin films.

Improved damp heat stability of Ga-Doped ZnO thin film by pretreatment of the polyethylene terephthalate substrate

Science.gov (United States)

Kim, B. B.; Seo, S. G.; Lim, Y. S.; Choi, H.-S.; Seo, W.-S.; Park, H.-H.

2013-09-01

A study on the damp heat stability of transparent conducting ZnO thin film grown on a polyethylene terephthalate substrate (PET) is reported. By thermal annealing of the PET substrate at 100°C with Ar flow in a vacuum chamber prior to the sputtering growth of Ga-doped ZnO (GZO) thin film, significantly enhanced damp heat stability was achieved at 60°C with a 90% relative humidity. Electrical and structural characterizations of the GZO thin films were carried out and the effects of the pretreatment on the improved damp heat stability are discussed.

Implantable polymer/metal thin film structures for the localized treatment of cancer by Joule heating

Science.gov (United States)

Kan-Dapaah, Kwabena; Rahbar, Nima; Theriault, Christian; Soboyejo, Wole

2015-04-01

This paper presents an implantable polymer/metal alloy thin film structure for localized post-operative treatment of breast cancer. A combination of experiments and models is used to study the temperature changes due to Joule heating by patterned metallic thin films embedded in poly-dimethylsiloxane. The heat conduction within the device and the surrounding normal/cancerous breast tissue is modeled with three-dimensional finite element method (FEM). The FEM simulations are used to explore the potential effects of device geometry and Joule heating on the temperature distribution and lesion (thermal dose). The FEM model is validated using a gel model that mimics biological media. The predictions are also compared to prior results from in vitro studies and relevant in vivo studies in the literature. The implications of the results are discussed for the potential application of polymer/metal thin film structures in hyperthermic treatment of cancer.

Preparation of RF reactively sputtered indium-tin oxide thin films with optical properties suitable for heat mirrors

International Nuclear Information System (INIS)

Boyadzhiev, S; Dobrikov, G; Rassovska, M

2008-01-01

Technologies are discussed for preparing and characterizing indium-tin oxide (ITO) thin films with properties appropriate for usage as heat mirrors in solar thermal collectors. The samples were prepared by means of radio frequency (RF) reactive sputtering of indium-tin targets in oxygen. The technological parameters were optimized to obtain films with optimal properties for heat mirrors. The optical properties of the films were studied by visible and infra-red (IR) spectrophotometry and laser ellipsometry. The reflectance of the films in the thermal IR range was investigated by a Fourier transform infra-red (FTIR) spectrophotometer. Heating of the substrates during the sputtering and their post deposition annealing in different environments were also studied. The ultimate purpose of the present research being the development of a technological process leading to low-cost ITO thin films with high transparency in the visible and near IR (0.3-2.4 μm) and high reflection in the thermal IR range (2.5-25 μm), we investigated the correlation of the ITO thin films structural and optical properties with the technological process parameters - target composition and heat treatment

Evaluation of empirical heat transfer models using TFG heat flux sensors

International Nuclear Information System (INIS)

De Cuyper, T.; Broekaert, S.; Chana, K.; De Paepe, M.; Verhelst, S.

2017-01-01

Thermodynamic engine cycle models are used to support the development of the internal combustion engine (ICE) in a cost and time effective manner. The sub model which describes the in-cylinder heat transfer from the working gases to the combustion chamber walls plays an important role in the accuracy of these simulation tools. The heat transfer affects the power output, engine efficiency and emissions of the engine. The most common heat transfer models in engine research are the models of Annand and Woschni. These models provide an instantaneous spatial averaged heat flux. In this research, prototype thin film gauge (TFG) heat flux sensors are used to capture the transient in-cylinder heat flux behavior within a production spark ignition (SI) engine as they are small, robust and able to capture the highly transient temperature swings. An inlet valve and two different zones of the cylinder head are instrumented with multiple TFG sensors. The heat flux traces are used to calculate the convection coefficient which includes all information of the convective heat transfer phenomena inside the combustion chamber. The implementation of TFG sensors inside the combustion chamber and the signal processing technique are discussed. The heat transfer measurements are used to analyze the spatial variation in heat flux under motored and fired operation. Spatial variation in peak heat flux was observed even under motored operation. Under fired operation the observed spatial variation is mainly driven by the flame propagation. Next, the paper evaluates the models of Annand and Woschni. These models fail to predict the total heat loss even with calibration of the models coefficients using a reference motored operating condition. The effect of engine speed and inlet pressure is analyzed under motored operation after calibration of the models. The models are able to predict the trend in peak heat flux value for a varying engine speed and inlet pressure. Next, the accuracy of the

Transparent conductive Ta2O5-codoped ITO thin films prepared by different heating process

International Nuclear Information System (INIS)

Zhang, B.; Dong, X.P.; Wu, J.S.; Xu, X.F.

2008-01-01

Tantalum-doped indium tin oxide thin films were deposited by a cosputtering technique with an ITO target and a Ta 2 O 5 target. The variations of microstructure, electrical and optical properties with substrate temperature and annealing temperature were investigated in some detail. Ta-doped ITO thin films showed better crystalline structure with different prominent plane orientation by different heating process. ITO:Ta thin films deposited at room temperature showed better optical and electrical properties. Increasing substrate temperature and reasonable annealing temperature could remarkably improve the optical and electrical properties of the films. The variation of carrier concentration had an important influence on near-IR reflection, near-UV absorption and optical bandgap. ITO:Ta thin films showed wider optical bandgap. ITO:Ta thin films under the optimum parameters had a sheet resistance of 10-20 and ohm;/sq and a transmittance of 85% with an optical bandgap of above 4.0 eV. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The effect of dry spots on heat transfer in a locally heated liquid film moving under the action of gas flow in a channel

Science.gov (United States)

Zaitsev, D. V.; Tkachenko, E. M.; Bykovskaya, E. F.

2017-11-01

Intensive evaporation of a thin liquid film, moving in a flat micro-/minichannel under the action of gas flow is very promising for the use in cooling systems of modern semiconductor devices with localized heat sources of high intensity. In this work, using the high-speed visualization, the effect of the formation of dry spots on heat transfer in a locally heated liquid film shear-driven in a channel was investigated. It was found that the maximum intensity of heat removal from the heater is achieved in the mode, when the film flow continuity is broken. During the experiment the total area of dry spots increases with increasing heat flux and heater temperature, but when the heater reaches a certain temperature (≈100°C), the total area begins to decrease. However, the length of contact line increases with increasing heat flux and reaches a maximum in the pre-crisis regime. Intensive evaporation in the region of the contact line may explain the achievement of high heat fluxes in the shear-driven liquid film.

Engineering flow states with localized forcing in a thin Marangoni-driven inclined film.

Science.gov (United States)

Levy, Rachel; Rosenthal, Stephen; Wong, Jeffrey

2010-11-01

Numerical simulations of lubrication models provide clues for experimentalists about the development of wave structures in thin liquid films. We analyze numerical simulations of a lubrication model for an inclined thin liquid film modified by Marangoni forces due to a thermal gradient and additional localized forcing heating the substrate. Numerical results can be explained through connections to theory for hyperbolic conservation laws predicting wave fronts from Marangoni-driven thin films without forcing. We demonstrate how a variety of forcing profiles, such as gaussian, rectangular, and triangular, affect the formation of downstream transient structures, including an N wave not commonly discussed in the context of thin films. Simulations employing a controlled approximation of a compressive-undercompressive wave pair demonstrate possibilities for applications of localized forcing as microfluidic valve. In the simulations, localized forcing provides a control parameter that can be used to determine mass flux and film profiles.

An analytic model of pool boiling critical heat flux on an immerged downward facing curved surface

International Nuclear Information System (INIS)

He, Hui; Pan, Liang-ming; Wu, Yao; Chen, De-qi

2015-01-01

Highlights: • Thin liquid film and supplement of liquid contribute to the CHF. • CHF increases from the bottom to the upper of the lowerhead. • Evaporation of thin liquid film is dominant nearby bottom region. • The subcooling has significant effects on the CHF. - Abstract: In this paper, an analytical model of the critical heat flux (CHF) on the downward facing curved surface for pool boiling has been proposed, which hypothesizes that the CHF on the downward facing curved is composed of two parts, i.e. the evaporation of the thin liquid film underneath the elongated bubble adhering to the lower head outer surface and the depletion of supplement of liquid due to the relative motion of vapor bubbles along with the downward facing curved. The former adopts the Kelvin–Helmholtz instability analysis of vapor–liquid interface of the vapor jets which penetrating in the thin liquid film. When the heat flux closing to the CHF point, the vapor–liquid interface becomes highly distorted, which block liquid to feed the thin liquid film and the thin liquid film will dry out gradually. While the latter considers that the vapor bubbles move along with the downward facing curved surface, and the liquid in two-phase boundary layer enter the liquid film that will be exhausted when the CHF occurs. Based on the aforementioned mechanism and the energy balance between the thin liquid film evaporation and water feeding, and taking the subcooling of the bulk water into account, the mathematic model about the downward facing curved surface CHF has been proposed. The CHF of the downward facing curved surface for pool boiling increases along with the downward facing orientation except in the vicinity of bottom center region, because in this region the vapor bubble almost stagnates and the evaporation of the thin liquid film is dominant. In addition, the subcooling has significant effect on the CHF. Comparing the result of this model with the published experimental results show

A kinetic model for stress generation in thin films grown from energetic vapor fluxes

Energy Technology Data Exchange (ETDEWEB)

Chason, E.; Karlson, M. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Colin, J. J.; Abadias, G. [Institut P' , Département Physique et Mécanique des Matériaux, Université de Poitiers-CNRS-ENSMA, SP2MI, Téléport 2, Bd M. et P. Curie, F-86962 Chasseneuil-Futuroscope (France); Magnfält, D.; Sarakinos, K. [Nanoscale Engineering Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)

2016-04-14

We have developed a kinetic model for residual stress generation in thin films grown from energetic vapor fluxes, encountered, e.g., during sputter deposition. The new analytical model considers sub-surface point defects created by atomic peening, along with processes treated in already existing stress models for non-energetic deposition, i.e., thermally activated diffusion processes at the surface and the grain boundary. According to the new model, ballistically induced sub-surface defects can get incorporated as excess atoms at the grain boundary, remain trapped in the bulk, or annihilate at the free surface, resulting in a complex dependence of the steady-state stress on the grain size, the growth rate, as well as the energetics of the incoming particle flux. We compare calculations from the model with in situ stress measurements performed on a series of Mo films sputter-deposited at different conditions and having different grain sizes. The model is able to reproduce the observed increase of compressive stress with increasing growth rate, behavior that is the opposite of what is typically seen under non-energetic growth conditions. On a grander scale, this study is a step towards obtaining a comprehensive understanding of stress generation and evolution in vapor deposited polycrystalline thin films.

Switching process between bistable positons of multiquantum flux tubes in a thin-film type I superconductor

International Nuclear Information System (INIS)

Parisi, J.; Huebener, R.P.; Muhlemeier, B.

1983-01-01

A superconducting memory device based on a bistable vortex position represents an interesting storage medium for future Josephson computers. In order to study the operational mode of such a single-flux quantum memory cell, we use as a model system multiquantum flux tubes in a thin-film type I superconductor (Pb). By employing high-resolution stroboscopic magnetooptical flux detection, we are able to globally visualize both spatial and temporal behavior of rapidly switching individual flux tubes. All experimental results agree reasonably well with theoretical model considerations of the energy balance during the elementary switching process

Evaporation thermal anslysis of Swallow-tailed Axial-grooved Heat Pipe

Science.gov (United States)

Zhang, Renping

2018-03-01

A detailed mathematical model that describes evaporating characteristics through thin liquid film at the evaporator section of swallow-tailed axial-grooved heat pipe was developed. The numerical simulation results about thin film profile, liquid-vapour interface temperature, evaporating rate and heat flux at the evaporating thin film region were given by the current investigation and the effect of superheat on the liquid-vapour interface temperature, evaporating mass rate and heat flux was discussed. Meanwhile, thermal model of the meniscus region at the evaporating section was developed to calculate the rate of heat transfer. The ratio of the heat conduction in the evaporating thin liquid film region and total heat rate were also discussed. It is indicated that the thickness of thin liquid film rises in a nearly linear fashion. The disjoining pressure can be neglected with increasing the liquid film thickness, tends to be negligibly small. The heat transfer rate at the intrinsic meniscus cannot be compared with that of the evaporating liquid film region.

The Structural Changes of the Sn(y)OX Thin Films Under Influence of Heat Treament

Science.gov (United States)

Vong, V.

2001-04-01

Composite oxide Sn(y) Ox made by thermal oxidation of the Sn(y)-bimetal thin films, in which y is the doped-materials as well as Sb, Ag or Pd. The Sn(y)-bimetal thin films have been made by evaporation in high vacuum onto NaCl-monocrystall and optical glass substrates. In the work the tin and the doped material (y) were put on two different boats and then both the boats were simultaniously heated to evaporate. The Sn(y)Ox thin films were annealed at the differential temperatures. The structural changes of its have been investigated by using X-ray diffraction and transmission electron microscope.

Numerical Simulation of Vapor Bubble Growth and Heat Transfer in a Thin Liquid Film

International Nuclear Information System (INIS)

Yu-Jia, Tao; Xiu-Lan, Huai; Zhi-Gang, Li

2009-01-01

A mathematical model is developed to investigate the dynamics of vapor bubble growth in a thin liquid film, movement of the interface between two fluids and the surface heat transfer characteristics. The model takes into account the effects of phase change between the vapor and liquid, gravity, surface tension and viscosity. The details of the multiphase now and heat transfer are discussed for two cases: (1) when a water micro-droplet impacts a thin liquid film with a vapor bubble growing and (2) when the vapor bubble grows and merges with the vapor layer above the liquid film without the droplet impacting. The development trend of the interface between the vapor and liquid is coincident qualitatively with the available literature, mostly at the first stage. We also provide an important method to better understand the mechanism of nucleate spray cooling. (fundamental areas of phenomenology (including applications))

Influence of heat treatment on field emission characteristics of boron nitride thin films

International Nuclear Information System (INIS)

Li Weiqing; Gu Guangrui; Li Yingai; He Zhi; Feng Wei; Liu Lihua; Zhao Chunhong; Zhao Yongnian

2005-01-01

Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 x 10 -4 Pa and the temperature of 800 and 1000 deg. C, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/μm and the emission current of 80 μA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 deg. C and disappeared at temperature of 1000 deg. C

Analytical Solutions of Heat Transfer and Film Thickness with Slip Condition Effect in Thin-Film Evaporation for Two-Phase Flow in Microchannel

Directory of Open Access Journals (Sweden)

Ahmed Jassim Shkarah

2015-01-01

Full Text Available Physical and mathematical model has been developed to predict the two-phase flow and heat transfer in a microchannel with evaporative heat transfer. Sample solutions to the model were obtained for both analytical analysis and numerical analysis. It is assumed that the capillary pressure is neglected (Morris, 2003. Results are provided for liquid film thickness, total heat flux, and evaporating heat flux distribution. In addition to the sample calculations that were used to illustrate the transport characteristics, computations based on the current model were performed to generate results for comparisons with the analytical results of Wang et al. (2008 and Wayner Jr. et al. (1976. The calculated results from the current model match closely with those of analytical results of Wang et al. (2008 and Wayner Jr. et al. (1976. This work will lead to a better understanding of heat transfer and fluid flow occurring in the evaporating film region and develop an analytical equation for evaporating liquid film thickness.

Simultaneous measurement of thermal conductivity and heat capacity of bulk and thin film materials using frequency-dependent transient thermoreflectance method.

Science.gov (United States)

Liu, Jun; Zhu, Jie; Tian, Miao; Gu, Xiaokun; Schmidt, Aaron; Yang, Ronggui

2013-03-01

The increasing interest in the extraordinary thermal properties of nanostructures has led to the development of various measurement techniques. Transient thermoreflectance method has emerged as a reliable measurement technique for thermal conductivity of thin films. In this method, the determination of thermal conductivity usually relies much on the accuracy of heat capacity input. For new nanoscale materials with unknown or less-understood thermal properties, it is either questionable to assume bulk heat capacity for nanostructures or difficult to obtain the bulk form of those materials for a conventional heat capacity measurement. In this paper, we describe a technique for simultaneous measurement of thermal conductivity κ and volumetric heat capacity C of both bulk and thin film materials using frequency-dependent time-domain thermoreflectance (TDTR) signals. The heat transfer model is analyzed first to find how different combinations of κ and C determine the frequency-dependent TDTR signals. Simultaneous measurement of thermal conductivity and volumetric heat capacity is then demonstrated with bulk Si and thin film SiO2 samples using frequency-dependent TDTR measurement. This method is further testified by measuring both thermal conductivity and volumetric heat capacity of novel hybrid organic-inorganic thin films fabricated using the atomic∕molecular layer deposition. Simultaneous measurement of thermal conductivity and heat capacity can significantly shorten the development∕discovery cycle of novel materials.

Functional Design of Dielectric-Metal-Dielectric-Based Thin-Film Encapsulation with Heat Transfer and Flexibility for Flexible Displays.

Science.gov (United States)

Kwon, Jeong Hyun; Choi, Seungyeop; Jeon, Yongmin; Kim, Hyuncheol; Chang, Ki Soo; Choi, Kyung Cheol

2017-08-16

In this study, a new and efficient dielectric-metal-dielectric-based thin-film encapsulation (DMD-TFE) with an inserted Ag thin film is proposed to guarantee the reliability of flexible displays by improving the barrier properties, mechanical flexibility, and heat dissipation, which are considered to be essential requirements for organic light-emitting diode (OLED) encapsulation. The DMD-TFE, which is composed of Al 2 O 3 , Ag, and a silica nanoparticle-embedded sol-gel hybrid nanocomposite, shows a water vapor transmission rate of 8.70 × 10 -6 g/m 2 /day and good mechanical reliability at a bending radius of 30 mm, corresponding to 0.41% strain for 1000 bending cycles. The electrical performance of a thin-film encapsulated phosphorescent organic light-emitting diode (PHOLED) was identical to that of a glass-lid encapsulated PHOLED. The operational lifetimes of the thin-film encapsulated and glass-lid encapsulated PHOLEDs are 832 and 754 h, respectively. After 80 days, the thin-film encapsulated PHOLED did not show performance degradation or dark spots on the cell image in a shelf-lifetime test. Finally, the difference in lifetime of the OLED devices in relation to the presence and thickness of a Ag film was analyzed by applying various TFE structures to fluorescent organic light-emitting diodes (FOLEDs) that could generate high amounts of heat. To demonstrate the difference in heat dissipation effect among the TFE structures, the saturated temperatures of the encapsulated FOLEDs were measured from the back side surface of the glass substrate, and were found to be 67.78, 65.12, 60.44, and 39.67 °C after all encapsulated FOLEDs were operated at an initial luminance of 10 000 cd/m 2 for sufficient heat generation. Furthermore, the operational lifetime tests of the encapsulated FOLED devices showed results that were consistent with the measurements of real-time temperature profiles taken with an infrared camera. A multifunctional hybrid thin-film encapsulation

Vortex lattice ordering in the flux flow state of Nb thin films

International Nuclear Information System (INIS)

Grimaldi, Gaia; Leo, Antonio; Nigro, Angela; Pace, Sandro

2010-01-01

We measure current-voltage characteristics at high driving currents for different magnetic fields and temperatures in Nb thin films of rather strong pinning. In a definite range of the B-T phase diagram we find that a current induced transition occurs in the flux flow motion of the vortex lattice, namely a dynamic ordering (DO). Contrary to the case of weaker pinning materials, DO is observed only at low fields, due to the stronger intrinsic disorder that can deform plastically the moving vortex lattice even for small applied fields.

Exact harmonic solutions to Guyer-Krumhansl-type equation and application to heat transport in thin films

Science.gov (United States)

Zhukovsky, K.; Oskolkov, D.

2018-03-01

A system of hyperbolic-type inhomogeneous differential equations (DE) is considered for non-Fourier heat transfer in thin films. Exact harmonic solutions to Guyer-Krumhansl-type heat equation and to the system of inhomogeneous DE are obtained in Cauchy- and Dirichlet-type conditions. The contribution of the ballistic-type heat transport, of the Cattaneo heat waves and of the Fourier heat diffusion is discussed and compared with each other in various conditions. The application of the study to the ballistic heat transport in thin films is performed. Rapid evolution of the ballistic quasi-temperature component in low-dimensional systems is elucidated and compared with slow evolution of its diffusive counterpart. The effect of the ballistic quasi-temperature component on the evolution of the complete quasi-temperature is explored. In this context, the influence of the Knudsen number and of Cauchy- and Dirichlet-type conditions on the evolution of the temperature distribution is explored. The comparative analysis of the obtained solutions is performed.

The Effect of Inclination Angle on Critical Heat Flux in a Locally Heated Liquid Film Moving Under the Action of Gas Flow in a Mini-Channel

Directory of Open Access Journals (Sweden)

Tkachenko Egor M.

2016-01-01

Full Text Available Intensively evaporating liquid films moving under the action of the cocurrent gas flow in a microchannel are promising for the use in modern cooling systems of semiconductor devices with high local heat release. This work has studied the dependence of the critical heat flux on the inclination angle of the channel. It has been found that the inclination angle in the plane parallel to the flow has no significant effect on the critical heat flux. Whereas the inclination angle in the plane perpendicular to the flow, on the contrary, significantly changes the value of the critical heat flux. However, for a given flow rate of fluid there is a threshold gas velocity at which the critical heat flux does not differ from the case of zero inclination of the channel. Thus, it can be concluded that the cooling system based on shear-driven liquid films can be potentially used when direction of the gravity changes.

Effects of nonuniform surface heat flux and uniform volumetric heating on blanket design for fusion reactors

International Nuclear Information System (INIS)

Hasan, M.Z.

1988-05-01

An analytical solution for the temperature profile and film temperature drop for fully-developed, laminar flow in a circular tube is provided. The surface heat flux varies circcimferentally but is constant along the axis of the tube. The volulmetric heat generation is uniform in the fluid. The fully developed laminar velocity profile is approximated by a power velocity profile to represent the flattening effect of a perpendicular magnetic field when the coolant is electrivally conductive. The presence of volumetric heat generation in the fluid adds another component to the film temperature drop to that due to the surface heat flux. The reduction of the boundary layer thickness by a perpendicular magnetic field reduces both of these two film temperature drops. A strong perpendicular magnetic field can reduce the film termperatiure drop by a factor of two if the fluid is electrically conducting. The effect of perpendicualr magnetic field )or the flatness of the velocity profile) is less pronounced on teh film termperature drop due to nonuniform surfacae heat flux than on that due to uniform surface heat flux. An example is provided to show the relative effects on these two film temperd

Extending the 3ω method: thermal conductivity characterization of thin films.

Science.gov (United States)

Bodenschatz, Nico; Liemert, André; Schnurr, Sebastian; Wiedwald, Ulf; Ziemann, Paul

2013-08-01

A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.

Film boiling heat transfer and vapour film collapse for various geometries

International Nuclear Information System (INIS)

Jouhara, H.I.; Axcell, B.P.

2005-01-01

Full text of publication follows: Film boiling heat transfer has application to the safe operation of water-cooled nuclear reactors under fault conditions and it has been studied using nickel-plated copper specimens in transient and steady state experiments. In the transient tests the specimens were held in a water flow; in the steady state investigation a specimen was mounted in an essentially quiescent pool of water. The transient investigation was conducted on two spheres with different diameters, two cylindrical specimens of different lengths in parallel flow, a short cylinder in cross flow and two flat plates with different lengths. The heat transfer coefficient, vapour film thickness (which was estimated from the heat transfer coefficient) and heat flux followed a similar behaviour with changing experimental conditions for all specimens studied. The heat transfer coefficient increased and the vapour film thickness and heat flux decreased as the specimen temperature decreased. As the water subcooling increased the heat transfer coefficient and the heat flux increased while the vapour film thickness decreased. The water velocity was found to have little influence on the film boiling heat transfer results except for the short cylinder in cross flow. The sphere diameter was found to affect the heat transfer results; the heat transfer coefficient and the heat flux were larger, for the larger sphere. No significant effect of the cylinder length on the heat transfer data was observed. However, the heat transfer coefficient was higher (and the average vapour film thinner) for the longer plate than for the shorter plate. Three vapour/liquid interface types were observed namely: 'smooth', 'rippled' and 'turbulent' depending largely on specimen and water temperatures. For all specimens, the maximum heat transfer coefficient, minimum heat flux and minimum film boiling temperature, occurring just before vapour film collapse, were found to increase as the water subcooling

Electrical properties of epitaxially grown VOx thin films

NARCIS (Netherlands)

Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

2003-01-01

High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

Thin Film Photovoltaic/Thermal Solar Panels

Institute of Scientific and Technical Information of China (English)

David JOHNSTON

2008-01-01

A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

Nonlinear periodic wavetrains in thin liquid films falling on a uniformly heated horizontal plate

Science.gov (United States)

Issokolo, Remi J. Noumana; Dikandé, Alain M.

2018-05-01

A thin liquid film falling on a uniformly heated horizontal plate spreads into fingering ripples that can display a complex dynamics ranging from continuous waves, nonlinear spatially localized periodic wave patterns (i.e., rivulet structures) to modulated nonlinear wavetrain structures. Some of these structures have been observed experimentally; however, conditions under which they form are still not well understood. In this work, we examine profiles of nonlinear wave patterns formed by a thin liquid film falling on a uniformly heated horizontal plate. For this purpose, the Benney model is considered assuming a uniform temperature distribution along the film propagation on the horizontal surface. It is shown that for strong surface tension but a relatively small Biot number, spatially localized periodic-wave structures can be analytically obtained by solving the governing equation under appropriate conditions. In the regime of weak nonlinearity, a multiple-scale expansion combined with the reductive perturbation method leads to a complex Ginzburg-Landau equation: the solutions of which are modulated periodic pulse trains which amplitude and width and period are expressed in terms of characteristic parameters of the model.

Effects of Post- Heat Treatment of Nanocrystalline ZnO Thin Films deposited on Zn-Deposited FTO Substrates

Energy Technology Data Exchange (ETDEWEB)

Kim, Ikhyun; Kim, Younggyu; Nam, Giwoong; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

2015-10-15

The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-doped tin oxide substrates by sol-gel spin coating. The SEM images of the samples showed that their surfaces had a mountain-chain-like structure. The film annealed at 400 ℃ had the highest degree of alignment along the c-axis, and its residual stress was close to zero. The PL spectra of the ZnO thin films consisted of sharp near-band-edge emissions (NBE) and broad deep-level emissions (DLE) in the visible range. The DLE peaks exhibited a green-to-red shift with an increase in the temperature. The highest INBE/IDLE ratio was observed in the film annealed at 400 ℃. Thus, the optimal temperature for growing high-quality ZnO thin films on Zn-deposited FTO substrates is 400 ℃.

Structure, morphology and optical properties of CuInS2 thin films prepared by modulated flux deposition

International Nuclear Information System (INIS)

Guillen, C.; Herrero, J.; Gutierrez, M.T.; Briones, F.

2005-01-01

The structure, morphology and optical properties of copper indium sulfide thin films prepared by a novel modulated flux deposition procedure have been investigated for layers from 200 to 400 nm thickness. These polycrystalline CuInS 2 films grown onto glass substrates showed CuAu-like structure, similar to epitaxial CuInS 2 films grown onto monocrystalline substrates, and direct band gap values Eg=1.52-1.55 eV, optimum for single-junction photovoltaic applications. The increase in the layer thickness leads to growth of the average crystallite size and increases slightly the surface roughness and the absorption coefficient

Theoretical investigation of the thermodynamic properties of metallic thin films

International Nuclear Information System (INIS)

Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac

2015-01-01

The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

Theoretical investigation of the thermodynamic properties of metallic thin films

Energy Technology Data Exchange (ETDEWEB)

Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

2015-05-29

The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

Numerical prediction of dryout heat flux in vertical uniformly heated round tubes

International Nuclear Information System (INIS)

Okawa, Tomio; Kotani, Akio; Kataoka, Isao; Naito, Masanori

2003-01-01

Dryout heat fluxes in vertical uniformly heated round tubes were predicted using a film flow model. The correlations adopted in the present analysis were summarized as follows: (1) Entrainment rate and deposition rate were evaluated by the correlations whose validity was confirmed in wide range of thermal-hydraulic conditions. (2) In addition to the droplet entrainment due to interfacial shear force, the entrainment resulting from the boiling in liquid film was considered. (3) The vapor quality at the onset of annular flow was evaluated by the correlation based on the measurement of minimum droplet flowrate. (4) It was postulated that the droplet flowrate at the starting point of annular flow was to be approximated by that in equilibrium state. (5) The onset of critical heat flux condition was determined by the complete disappearance of liquid film. Though several assumptions were used in the present model, all the correlations adopted here were based on experimental data or considerations of the physical processes in annular flow. The resulting model required no parameters that should be adjusted from the measured data of critical heat flux. A number of experimental data of critical heat flux in forced flow of water in vertical uniformly heated round tubes were used to test the basic performance of the model. The comparisons between the calculated and measured critical heat fluxes showed that the predicted results by the present model agree with the experimental data fairly well if the flow pattern at burnout is considered annular flow. The predictive capability was not deteriorated even in the cases of small diameter tube, short length tube as well as low vapor quality at the onset of critical heat flux condition. (author)

Pool film boiling heat transfer, 5

International Nuclear Information System (INIS)

Sakurai, A.; Shiotsu, M.; Hata, K.

1981-01-01

Steady minimum film boiling heat flux and temperature were experimentally studied for a horizontal cylinder test heater in a pool of saturated water under pressures ranging from 0.1 to 2 MPa. Minimum temperature of film boiling may be determined by hydrodynamic Taylor instability for the pressures lower than around 1.0 MPa and by homogeneous nucleation temperature for the higher pressures. However, conventional correlations of minimum heat flux based on the hydrodynamic Taylor instability cannot at all predict the pressure dependency of the experimental data in the lower pressure region. Semi-empirical equation of the minimum heat flux based on the hydrodynamic Taylor instability was given. (author)

Aquatic biofouling prevention by electrically charged nanocomposite polymer thin film membranes.

Science.gov (United States)

de Lannoy, Charles-François; Jassby, David; Gloe, Katie; Gordon, Alexander D; Wiesner, Mark R

2013-03-19

Electrically conductive polymer-nanocomposite (ECPNC) tight nanofiltration (NF) thin film membranes were demonstrated to have biofilm-preventing capabilities under extreme bacteria and organic material loadings. A simple route to the creation and application of these polyamide-carbon nanotube thin films is also reported. These thin films were characterized with SEM and TEM as well as FTIR to demonstrate that the carbon nanotubes are embedded within the polyamide and form ester bonds with trimesoyl chloride, one of the monomers of polyamide. These polymer nanocomposite thin film materials boast high electrical conductivity (∼400 S/m), good NaCl rejection (>95%), and high water permeability. To demonstrate these membranes' biofouling capabilities, we designed a cross-flow water filtration vessel with insulated electrical leads connecting the ECPNC membranes to an arbitrary waveform generator. In all experiments, conducted in highly bacterially contaminated LB media, flux tests were run until fluxes decreased by 45 ± 3% over initial flux. Biofilm-induced, nonreversible flux decline was observed in all control experiments and a cross-flow rinse with the feed solution failed to induce flux recovery. In contrast, flux decrease for the ECPNC membranes with an electric potential applied to their surface was only caused by deposition of bacteria rather than bacterial attachment, and flux was fully recoverable following a short rinse with the feed solution and no added cleaning agents. The prevention of biofilm formation on the ECPNC membranes was a long-term effect, did not decrease with use, and was highly reproducible.

Analysis of heat transfer under high heat flux nucleate boiling conditions

Energy Technology Data Exchange (ETDEWEB)

Liu, Y.; Dinh, N. [3145 Burlington Laboratories, Raleigh, NC (United States)

2016-07-15

Analysis was performed for a heater infrared thermometric imaging temperature data obtained from high heat flux pool boiling and liquid film boiling experiments BETA. With the OpenFOAM solver, heat flux distribution towards the coolant was obtained by solving transient heat conduction of heater substrate given the heater surface temperature data as boundary condition. The so-obtained heat flux data was used to validate them against the state-of-art wall boiling model developed by D. R. Shaver (2015) with the assumption of micro-layer hydrodynamics. Good agreement was found between the model prediction and data for conditions away from the critical heat flux (CHF). However, the data indicate a different heat transfer pattern under CHF, which is not captured by the current model. Experimental data strengthen the notion of burnout caused by the irreversible hot spot due to failure of rewetting. The observation forms a basis for a detailed modeling of micro-layer hydrodynamics under high heat flux.

Analysis of heat transfer under high heat flux nucleate boiling conditions

International Nuclear Information System (INIS)

Liu, Y.; Dinh, N.

2016-01-01

Analysis was performed for a heater infrared thermometric imaging temperature data obtained from high heat flux pool boiling and liquid film boiling experiments BETA. With the OpenFOAM solver, heat flux distribution towards the coolant was obtained by solving transient heat conduction of heater substrate given the heater surface temperature data as boundary condition. The so-obtained heat flux data was used to validate them against the state-of-art wall boiling model developed by D. R. Shaver (2015) with the assumption of micro-layer hydrodynamics. Good agreement was found between the model prediction and data for conditions away from the critical heat flux (CHF). However, the data indicate a different heat transfer pattern under CHF, which is not captured by the current model. Experimental data strengthen the notion of burnout caused by the irreversible hot spot due to failure of rewetting. The observation forms a basis for a detailed modeling of micro-layer hydrodynamics under high heat flux.

Thin-film calorimetry. In-situ characterization of materials for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Omelcenko, Alexander; Wulfmeier, Hendrik; Albrecht, Daniel; Fritze, Holger [Clausthal Univ. of Technology, Goslar (Germany). Inst. of Energy Research and Physical Technologies; El Mofid, Wassima; Ivanov, Svetlozar; Bund, Andreas [Ilmenau Univ. of Technology (Germany). Dept. of Electrochemistry

2017-11-15

Thin-film calorimetry allows for qualitative and quantitative in-situ analysis of thermodynamic properties of thin films and thin-film systems from room temperature up to 1000 C. It is based on highly sensitive piezoelectric langasite resonators which serve simultaneously as planar temperature sensors and substrates for the films of interest. Generation or consumption of heat during phase transformations of the films cause deviations from the regular course of the resonance frequency. Thermodynamic data such as phase transformation temperatures and enthalpies are extracted from these deviations. Thin-film calorimetry on Sn and Al thin films is performed to prove the concept. The results demonstrate high reproducibility of the measurement approach and are in agreement with literature data obtained by established calorimetric techniques. The calibration of the system is done in different atmospheres by application of defined heat pulses via heating structures. The latter replace the films of interest and simulate phase transformations to provide detailed analysis of the heat transfer mechanisms occurring in the measurement system. Based on this analysis, a data evaluation concept is developed. Application-relevant studies are performed on thin films of the lithium-ion battery materials NMC(A), NCA, LMO, and MoS{sub 2}. Their phase transformation temperatures and enthalpies are evaluated in oxidizing and reducing atmospheres. Furthermore, their thermodynamic stability ranges are presented. Finally, measurements on all-solid-state thin-film batteries during electrochemical cycling are performed. They demonstrate the suitability of the system for in-situ investigations.

Film boiling heat transfer in liquid helium

International Nuclear Information System (INIS)

Inai, Nobuhiko

1979-01-01

The experimental data on the film boiling heat transfer in liquid helium are required for investigating the stability of superconducting wires. On the other hand, liquid helium has the extremely different physical properties as compared with the liquids at normal temperature such as water. In this study, the experiments on pool boiling were carried out, using the horizontal top surface of a 20 mm diameter copper cylinder in liquid helium. For observing individual bubbles, the experiments on film boiling from a horizontal platinum wire were performed separately in liquid nitrogen and liquid helium, and photographs of floating-away bubbles were taken. The author pointed out the considerable upward shift of the boiling curve near the least heat flux point in film boiling from the one given by the Berenson's equation which has been said to agree comparatively well with the data on the film boiling of the liquids at normal temperature, and the reason was investigated. Consequently, a model for film boiling heat transfer was presented. Also one equation expressing the film boiling at low heat flux for low temperature liquids was proposed. It represents well the tendency to shift from Berenson's equation of the experimental data on film boiling at the least heat flux point for liquid helium, liquid nitrogen and water having extremely different physical properties. Some discussions are added at the end of the paper. (Wakatsuki, Y.)

Cyclic variation of heat flux on spark plug; Tenka plug bu no netsuryusoku hendo no sokutei

Energy Technology Data Exchange (ETDEWEB)

Ishii, K.; Sasaki, T.; Urata, Y. [Honda Motor Co. Ltd., Tokyo (Japan); Kagawa, J.; Matsutani, W. [NGK Spark Plug Co. Ltd., Nagoya (Japan)

1998-02-25

This paper examines the relationship between the magnitude of the heat flux to the spark plug ground electrode, averaged over an 80` crank angle (CA) of early compression stroke, and the initial burning rate, defined as the CA at which 5% of mass is burned. The heat flux was measured by a thin-film thermocouple with the hot junction on the surface of ground electrode. The results demonstrate that faster initial burning rate correlated well with increasing heat flux from the spark plug to the mixture. The difference in the magnitude and direction of the heat flux is associated with the amount of residual gas concentration and thus the results show the effect of residual gas concentration. The cycle-averaged heat flux from the hot junction is 0.367 MW/m{sup 2}, corresponding to a total heat flow of 20 W from the total surface area of ground electrode. This value is about an order of magnitude larger than that previously reported in the literature for locations away from the spark plug, e. g. at the cylinder wall. 11 refs., 9 figs., 1 tab.

Electrochromic properties of nanocrystalline MoO3 thin films

International Nuclear Information System (INIS)

Hsu, C.-S.; Chan, C.-C.; Huang, H.-T.; Peng, C.-H.; Hsu, W.-C.

2008-01-01

Electrochromic MoO 3 thin films were prepared by a sol-gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO 3 thin films. The effects of annealing temperatures ranging from 100 o C to 500 o C were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO 4 /propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO 3 thin films heat-treated at 350 o C varied from 80% to 35% at λ = 550 nm (ΔT = ∼ 45%) and from 86% to 21% at λ ≥ 700 nm (ΔT = ∼ 65%) after coloration. Films heat-treated at 350 deg. C exhibited the best electrochromic properties in the present study

Flux pinning enhancement in thin films of Y3 Ba5 Cu8O18.5 + d

Science.gov (United States)

Aghabagheri, S.; Mohammadizadeh, M. R.; Kameli, P.; Salamati, H.

2018-06-01

YBa2Cu3O7 (Y123) and Y3Ba5Cu8O18 (Y358) thin films were deposited by pulsed laser deposition method. XRD analysis shows both films grow in c axis orientation. Resistivity versus temperature analysis shows superconducting transition temperature was about 91.2 K and 91.5 K and transition width for Y358 and Y123 films was about 0.6 K and 1.6 K, respectively. Analysis of the temperature dependence of the AC susceptibility near the transition temperature, employing Bean's critical state model, indicates that intergranular critical current density for Y358 films is more than twice of intergranular critical current density of Y123 films. Thus, flux pining is stronger in Y358 films. Weak links in the both samples is of superconductor-normal-superconductor (SNS) type irrespective of stoichiometry.

Thinning and rupture of a thin liquid film on a heated surface

Energy Technology Data Exchange (ETDEWEB)

Bankoff, S.G.; Davis, S.H.

1992-08-05

Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

Effect of Heat and Laser Treatment on Cu2S Thin Film Sprayed on Polyimide Substrate

Science.gov (United States)

Magdy, Wafaa; Mahmoud, Fawzy A.; Nassar, Amira H.

2018-02-01

Three samples of copper sulfide Cu2S thin film were deposited on polyimide substrate by spray pyrolysis using deposition temperature of 400°C and deposition time of about 45 min. One of the samples was left as deposited, another was heat treated, while the third was laser treated. The structural, surface morphological, optical, mechanical, and electrical properties of the films were investigated. X-ray diffraction (XRD) analysis showed that the copper sulfide films were close to copper-rich phase (Cu2S). Increased crystallite size after heat and laser treatment was confirmed by XRD analysis and scanning electron microscopy. Vickers hardness measurements showed that the samples' hardness values were enhanced with increasing crystallite size, representing an inverse Hall-Petch (H-P) effect. The calculated optical bandgap of the treated films was lower than that of the deposited film. Finally, it was found that both heat and laser treatment enhanced the physical properties of the sprayed Cu2S films on polyimide substrate for use in solar energy applications.

Prediction of critical heat flux in vertical pipe flow

International Nuclear Information System (INIS)

Levy, S.; Healzer, J.M.; Abdollahian, D.

1981-01-01

A previously developed semi-empirical model for adiabatic two-phase annular flow ix extended to predict the critical heat flux (CHF) in a vertical pipe. The model exhibits a sharply declining curve of CHF versus steam quality (X) at low X, and is relatively independent of the heat flux distribution. In this region, vaporization of the liquid film controls. At high X, net deposition upon the liquid film becomes important and CHF versus X flattens considerably. In this zone, CHF is dependent upon the heat flux distribution. Model predictions are compared to test data and an empirical correlation. The agreement is generally good if one employs previously reported mass transfer coefficients. (orig.)

Shape memory characteristics of sputter-deposited Ti-Ni thin films

International Nuclear Information System (INIS)

Miyazaki, Shuichi; Ishida, Akira.

1994-01-01

Ti-Ni shape memory alloy thin films were deposited using an RF magnetron sputtering apparatus. The as-sputtered films were heat-treated in order to crystallize and memorize. After the heat treatment, the shape memory characteristics have been investigated using DSC and thermomechanical tests. Upon cooling the thin films, the solution-treated films showed a single peak in the DSC curve indicating a single stage transformation occurring from B2 to the martensitic phase, while the age-treated films showed double peaks indicating a two-stage transformation, i.e., from B2 to the R-phase, then to the martensitic phase. A perfect shape memory effect was achieved in these sputter-deposited Ti-Ni thin films in association both with the R-phase and martensitic transformations. Transformation temperatures increased linearly with increasing applied stress. The transformation strain also increased with increasing stress. The shape memory characteristics were strongly affected by heat-treatment conditions. (author)

Fabrication of Quench Condensed Thin Films Using an Integrated MEMS Fab on a Chip

Science.gov (United States)

Lally, Richard; Reeves, Jeremy; Stark, Thomas; Barrett, Lawrence; Bishop, David

Atomic calligraphy is a microelectromechanical systems (MEMS)-based dynamic stencil nanolithography technique. Integrating MEMS devices into a bonded stacked array of three die provides a unique platform for conducting quench condensed thin film mesoscopic experiments. The atomic calligraphy Fab on a Chip process incorporates metal film sources, electrostatic comb driven stencil plate, mass sensor, temperature sensor, and target surface into one multi-die assembly. Three separate die are created using the PolyMUMPs process and are flip-chip bonded together. A die containing joule heated sources must be prepared with metal for evaporation prior to assembly. A backside etch of the middle/central die exposes the moveable stencil plate allowing the flux to pass through the stencil from the source die to the target die. The chip assembly is mounted in a cryogenic system at ultra-high vacuum for depositing extremely thin films down to single layers of atoms across targeted electrodes. Experiments such as the effect of thin film alloys or added impurities on their superconductivity can be measured in situ with this process.

Equations governing the liquid-film flow over a plane with heat flux and interfacial phase change

International Nuclear Information System (INIS)

Spindler, B.

1983-01-01

The purpose of the study is to find a system of equations which can be used to study the linear stability of a liquid film flow over a plane exhibiting wall heat flux and interfacial phase change. The flow of such a film is governed by four groups of equations: the equations for mass balance, momentum and energy in the liquid; equations for the balance in the steam; equations for the balance at the liquid-steam interface; and the boundary conditions. Two flow patterns are considered - flow with upstream film and film condensation. Stability is studied by perturbation methods

Equations governing the liquid-film flow over a plane with heat flux and interfacial phase change

Science.gov (United States)

Spindler, B.

1983-08-01

The purpose of the study is to find a system of equations which can be used to study the linear stability of a liquid film flow over a plane exhibiting wall heat flux and interfacial phase change. The flow of such a film is governed by four groups of equations: the equations for mass balance, momentum and energy in the liquid; equations for the balance in the steam; equations for the balance at the liquid-steam interface; and the boundary conditions. Two flow patterns are considered - flow with upstream film and film condensation. Stability is studied by perturbation methods.

Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

Energy Technology Data Exchange (ETDEWEB)

Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

2000-05-01

The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

Thin Film Microbatteries

International Nuclear Information System (INIS)

Dudney, Nancy J.

2008-01-01

aerosol spray coating, for one or more components of the battery. The active materials used for the thin film cathodes and anodes are familiar intercalation compounds, but the microstructures and often the cycling properties of the thin films may be quite distinct from those of battery electrodes formed from powders. The thin film cathodes are dense and homogeneous with no added phases such as binders or electrolytes. When deposited at ambient temperatures, the films of cathodes, such as LiCoO 2 , V 2 O 5 , LiMn 2 O4 , LiFePO 4 are amorphous or nanocrystalline. But even in this form, they often act as excellent cathodes with large specific capacities and good stability for hundreds to thousands of cycles. Annealing the cathode films at temperatures of 300 to 800 C may be used to induce crystallization and grain growth of the desired intercalation compound. Crystallizing the cathode film generally improves the Li chemical diffusivity in the electrode material, and hence the power delivered by the battery, by 1-2 orders of magnitude. The microstructure is also tailored by the deposition and heat treatment. Figure 3 shows a fracture edge of an annealed LiCoO 2 cathode film on an alumina substrate. The columnar microstructure, which is typical of a vapor deposited film, sinters at high temperatures leaving small fissures between the dense columns. Such crystalline films also may have a preferred crystallographic orientation. For LiCoO 2 films the crystallographic texture differs for films deposited by sputtering versus pulse laser ablation processes. To improve the manufacturability of the thin film batteries, it would be beneficial to eliminate or minimize the temperature or duration of the annealing step. Several efforts have lead to low temperature fabrication of thin film batteries on polyimide substrates, but the battery capacity and rate are lower than those treated at high temperatures. For the battery anode, many designs use a vapor-deposited metallic lithium film as

Predicting critical heat flux in slug flow regime of uniformly heated ...

African Journals Online (AJOL)

Numerical computation code (PWR-DNBP) has been developed to predict Critical Heat Flux (CHF) of forced convective flow of water in a vertical heated channel. The code was based on the liquid sub-layer model, with the assumption that CHF occurred when the liquid film thickness between the heated surface and vapour ...

Effects of quartz on crystallization behavior of mold fluxes and microstructural characteristics of flux film.

Science.gov (United States)

Lei, Liu; Xiuli, Han; Mingduo, Li; Di, Zhang

2018-01-01

Mold fluxes are mainly prepared using cement clinker, quartz, wollastonite, borax, fluorite, soda ash and other mineral materials. Quartz, as one of the most common and essential materials, was chosen for this study to analyze itseffects on crystallization temperature, critical cooling rate, crystal incubation time, crystallization ratio and phases of flux film. We used the research methods of process mineralogy with the application of the single hot thermocouple technique, heat flux simulator, polarizing microscope, X-ray diffraction, etc. Results: By increasing the quartz content from 16 mass% to 24 mass%, the crystallization temperature, critical cooling rate and crystallization ratio of flux film decreased, and the crystal incubation time was extended. Meanwhile, the mineralogical structure of the flux film changed, with a large amount of wollastonite precipitation and a significant decrease in the cuspidine content until it reached zero. This showed a steady decline in the heat transfer control capacity of the flux film. The reason for the results above is that, by increasing the quartz content, the silicon-oxygen tetrahedron network structure promoted a rise in viscosity and restrained ion migration, inhibiting crystal nucleation and growth, leading to the weakening of the crystallization and a decline in the crystallization ratio.

Ultra thin metallic coatings to control near field radiative heat transfer

Science.gov (United States)

Esquivel-Sirvent, R.

2016-09-01

We present a theoretical calculation of the changes in the near field radiative heat transfer between two surfaces due to the presence of ultra thin metallic coatings on semiconductors. Depending on the substrates, the radiative heat transfer is modulated by the thickness of the ultra thin film. In particular we consider gold thin films with thicknesses varying from 4 to 20 nm. The ultra-thin film has an insulator-conductor transition close to a critical thickness of dc = 6.4 nm and there is an increase in the near field spectral heat transfer just before the percolation transition. Depending on the substrates (Si or SiC) and the thickness of the metallic coatings we show how the near field heat transfer can be increased or decreased as a function of the metallic coating thickness. The calculations are based on available experimental data for the optical properties of ultrathin coatings.

Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy

International Nuclear Information System (INIS)

Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

2015-01-01

LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO 3 films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application

Thermal coupling effect on the vortex dynamics of superconducting thin films: time-dependent Ginzburg–Landau simulations

Science.gov (United States)

Jing, Ze; Yong, Huadong; Zhou, Youhe

2018-05-01

In this paper, vortex dynamics of superconducting thin films are numerically investigated by the generalized time-dependent Ginzburg–Landau (TDGL) theory. Interactions between vortex motion and the motion induced energy dissipation is considered by solving the coupled TDGL equation and the heat diffusion equation. It is found that thermal coupling has significant effects on the vortex dynamics of superconducting thin films. Branching in the vortex penetration path originates from the coupling between vortex motion and the motion induced energy dissipation. In addition, the environment temperature, the magnetic field ramp rate and the geometry of the superconducting film also greatly influence the vortex dynamic behaviors. Our results provide new insights into the dynamics of superconducting vortices, and give a mesoscopic understanding on the channeling and branching of vortex penetration paths during flux avalanches.

FILM-30: A Heat Transfer Properties Code for Water Coolant

International Nuclear Information System (INIS)

MARSHALL, THERON D.

2001-01-01

A FORTRAN computer code has been written to calculate the heat transfer properties at the wetted perimeter of a coolant channel when provided the bulk water conditions. This computer code is titled FILM-30 and the code calculates its heat transfer properties by using the following correlations: (1) Sieder-Tate: forced convection, (2) Bergles-Rohsenow: onset to nucleate boiling, (3) Bergles-Rohsenow: partially developed nucleate boiling, (4) Araki: fully developed nucleate boiling, (5) Tong-75: critical heat flux (CHF), and (6) Marshall-98: transition boiling. FILM-30 produces output files that provide the heat flux and heat transfer coefficient at the wetted perimeter as a function of temperature. To validate FILM-30, the calculated heat transfer properties were used in finite element analyses to predict internal temperatures for a water-cooled copper mockup under one-sided heating from a rastered electron beam. These predicted temperatures were compared with the measured temperatures from the author's 1994 and 1998 heat transfer experiments. There was excellent agreement between the predicted and experimentally measured temperatures, which confirmed the accuracy of FILM-30 within the experimental range of the tests. FILM-30 can accurately predict the CHF and transition boiling regimes, which is an important advantage over current heat transfer codes. Consequently, FILM-30 is ideal for predicting heat transfer properties for applications that feature high heat fluxes produced by one-sided heating

Molecular dynamics study on the effect of boundary heating rate on the phase change characteristics of thin film liquid

Energy Technology Data Exchange (ETDEWEB)

Hasan, Mohammad Nasim, E-mail: nasim@me.buet.ac.bd.com; Morshed, A. K. M. Monjur, E-mail: shavik@me.buet.ac.bd.com; Rabbi, Kazi Fazle, E-mail: rabbi35.me10@gmail.com; Haque, Mominul, E-mail: mominulmarup@gmail.com [Department of Mechanical Engineering, Bangladesh University of Engineering and Technology (BUET) Dhaka-1000 (Bangladesh)

2016-07-12

In this study, theoretical investigation of thin film liquid phase change phenomena under different boundary heating rates has been conducted with the help of molecular dynamics simulation. To do this, the case of argon boiling over a platinum surface has been considered. The study has been conducted to get a better understanding of the nano-scale physics of evaporation/boiling for a three phase system with particular emphasis on the effect of boundary heating rate. The simulation domain consisted of liquid and vapor argon atoms placed over a platinum wall. Initially the whole system was brought to an equilibrium state at 90 K with the help of equilibrium molecular dynamics and then the temperature of the bottom wall was increased to a higher temperature (250 K/130 K) over a finite heating period. Depending on the heating period, the boundary heating rate has been varied in the range of 1600×10{sup 9} K/s to 8×10{sup 9} K/s. The variations of argon region temperature, pressure, net evaporation number with respect to time under different boundary heating rates have been determined and discussed. The heat fluxes normal to platinum wall for different cases were also calculated and compared with theoretical upper limit of maximum possible heat transfer to elucidate the effect of boundary heating rate.

Thermoelectric prospects of chemically deposited PbSe and SnSe thin films

Science.gov (United States)

Nair, P. K.; Martínez, Ana Karen; Rosa García Angelmo, Ana; Barrios Salgado, Enue; Nair, M. T. S.

2018-03-01

Thin films of PbSe of 400-600 nm in thickness, were obtained via chemical deposition from a solution containing lead nitrate, thiourea and selenosufate. SnSe thin films of 90-180 nm in thickness, were also obtained by chemical deposition from a solution containing selenosulfate. Optical and electrical properties of these thin films were significantly altered by heating them in selenium vapor at 300 °C. Thin film PbSe has a bandgap (Eg) of 1.17 eV (direct gap, forbidden transitions), which decreases to 0.77 eV when it has been heated. Its electrical conductivity (σ) is p-type: 0.18 Ω-1 cm-1 (as-prepared), and 6.4 Ω-1 cm-1 when heated. Thin film SnSe is of orthorhombic crystalline structure which remains stable when heated at 300 °C, but its Eg increases from 1.12 eV (indirect) in as-prepared film to 1.5 eV (direct, forbidden transitions) upon heating. Its electrical conductivity is p-type, which increases from 0.3 Ω-1 cm-1 (as-prepared) to 1 Ω-1 cm-1 when heated (without Se-vapor). When SnSe film is heated at 300 °C in the presence of Se-vapor, they transform to SnSe2, with Eg of 1.5 eV (direct, forbidden) with n-type electrical conductivity, 11 Ω-1 cm-1. The Seebeck coefficient for the PbSe films is: +0.55 mV K-1 (as prepared) and +0.275 mV K-1 (heated); for SnSe films it is: +0.3 mV K-1 (as prepared) and +0.20 mV K-1 (heated); and for SnSe2 film, - 0.35 mV K-1. A five-element PbSe-SnSe2-PbSe-SnSe2-PbSe thermoelectric device demonstrated 50 mV for a temperature difference ΔT = 20 °C (2.5 mV K-1). For SnSe-SnSe2-SnSe-SnSe2-SnSe device, the value is 15 mV for ΔT = 20 °C (0.75 mV K-1). Prospect of these thin films in thermoelectric devices of hybrid materials, in which the coatings may be applied on distinct substrate and geometries is attractive.

Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

International Nuclear Information System (INIS)

Gerbi, Jennifer E.; Abelson, John R.

2007-01-01

We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

Flux pinning properties of ErBa2Cu3Oy thin films with BaZrO3 nanorods

International Nuclear Information System (INIS)

Haruta, M; Fujiyoshi, T; Sueyoshi, T; Dezaki, K; Ichigosaki, D; Miyahara, K; Miyagawa, R; Mukaida, M; Matsumoto, K; Yoshida, Y; Ichinose, A; Horii, S

2006-01-01

ErBa 2 Cu 3 O y (ErBCO) thin films with BaZrO 3 (BZO) nanorods were prepared by a PLD method for an enhancement of the critical current density J c . The values of J c for the ErBCO thin film containing 1.5 wt% BZO (Er15) in magnetic fields are higher than those for the ErBCO thin film containing 0.5 wt% BZO (Er05). The peaks of J c have been observed in the angular dependence of J c in both the films when the magnetic field is applied parallel to the c-axis. It has been found that the peak is attributed to the flux pinning by BZO nanorods oriented parallel to the c-axis. The vortex glass-liquid transition temperature T g and the pinning parameter m were derived by fitting observed electric transport properties to the theoretical expression based on the percolation transition model. The value of T g of Er15 is higher than that of Er05. This result indicates that the vortex glass phase extends to a higher temperature region on increasing the fraction of BZO. The peak of m has been found in the magnetic field dependence. This fact is probably due to matching the density of BZO nanorods with that of fluxoids, which was confirmed by TEM observations

Numerical study of heat and mass transfer during evaporation of a thin liquid film

Directory of Open Access Journals (Sweden)

Oubella M’hand

2015-01-01

Full Text Available A numerical study of mixed convection heat and mass transfer with film evaporation in a vertical channel is developed. The emphasis is focused on the effects of vaporization of three different liquid films having widely different properties, along the isothermal and wetted walls on the heat and mass transfer rates in the channel. The induced laminar downward flow is a mixture of blowing dry air and vapour of water, methanol or acetone, assumed as ideal gases. A two-dimensional steady state and elliptical flow model, connected with variable thermo-physical properties, is used and the phase change problem is based on thin liquid film assumptions. The governing equations of the model are solved by a finite volume method and the velocity-pressure fields are linked by SIMPLE algorithm. The numerical results, including the velocity, temperature and concentration profiles, as well as axial variations of Nusselt numbers, Sherwood number and dimensionless film evaporation rate are presented for two values of inlet temperature and Reynolds number. It was found that lower the inlet temperature and Re, the higher the induced flows cooling with respect of most volatile film. The better mass transfer rates related with film evaporation are found for a system with low mass diffusion coefficient.

Cathodic electrodeposition of CuInSe sub 2 thin films

Energy Technology Data Exchange (ETDEWEB)

Guillen, C; Galiano, E; Herrero, J [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1991-01-01

In order to study the preparation process of CuInSe{sub 2} thin films by a one-step electrodeposition method, thin films of the compound were prepared from aqueous citric acid (C{sub 6}H{sub 8}O{sub 7} . H{sub 2}O) plating baths onto titanium substrates. During electrodeposition, the bath composition and deposition potential were changed to obtain stoichiometric thin films. In general, close to stoichiometry, layers rich in selenium were observed, and this excess of selenium was removed after heat treatment. Best quality films were obtained after annealing at 400deg C during 15 min. X-ray diffraction showed the formation of CuInSe{sub 2} films, the chalcopyrite structure, at heating treatment temperatures higher than 350deg C. Optical measurements showed that the band gap of the deposited material was 0.99 eV. (orig.).

Study of nanocluster-assembled ZnO thin films by nanocluster-beam deposition

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhiwei; Lei, Wei; Zhang, Xiaobing [School of Electronic Science and Engieering, Southeast University, Nanjing (China); Tay, Beng Kang [School of Electronical and Electronic Engineering, Nanyang Technological University, Nanyang (Singapore)

2012-01-15

Nanocluster-assembled ZnO thin films were obtained by nanocluster-beam deposition, in which nanoclusters were produced by a magnetron sputtering gas aggregation source. Two kinds of ZnO thin films were obtained using this method with the one grown under the on-line heating temperature of 700 C, and the other grown without on-line heating. Film microstructure and optical properties are investigated by various diagnostic techniques. It was found that both of film microstructure of ZnO thin films keep wurtzite structure as that of ZnO bulk materials. The averaged particle size for the film grown without on-line heating is around 6 nm, which is a little lower than that grown with the on-line heating. It was also found that as increasing the wavelength, both of the absorbance spectra for the films decrease sharply near ultra-visible to extend slowly to the visible and infrared wavelength range. For the film grown without on-line heating, the bandgap energy was estimated to 3.77 eV, while for the film grown with on-line heating, the bandgap energy was redshift to 3.71 eV. Similar behavior was also found for PL spectra analysis, where PL spectrum exhibited a peak centered at 3.31 eV without on-line heating, while it redshift to 3.20 eV with on-line heating. The mechanisms behind these behaviors were presented in this article. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

P-type CuxS thin films: Integration in a thin film transistor structure

International Nuclear Information System (INIS)

Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

2013-01-01

Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

Preparation and characterization of nanocrystalline porous TiO2/WO3 composite thin films

International Nuclear Information System (INIS)

Hsu, C.-S.; Lin, C.-K.; Chan, C.-C.; Chang, C.-C.; Tsay, C.-Y.

2006-01-01

TiO 2 materials possessing not only photocatalytic but also electrochromic properties have attracted many research and development interests. Though WO 3 exhibits excellent electrochromic properties, the much higher cost and water-sensitivity of WO 3 as compared with the TiO 2 may restrict the practical application of WO 3 materials. In the present study, the feasibility of preparing nanocrystalline porous TiO 2 /WO 3 composite thin films was investigated. Precursors of sols TiO 2 and/or WO 3 and polystyrene microspheres were used to prepare nanocrystalline pure TiO 2 , WO 3 , and composite TiO 2 /WO 3 thin films by spin coating. The spin-coated thin films were amorphous and, after heat treating at a temperature of 500 o C, nanocrystalline TiO 2 , TiO 2 /WO 3 , and WO 3 thin films with or without pores were prepared successfully. The heat-treated thin films were colorless and coloration-bleaching phenomena can be observed during cyclic voltammetry tests. The heat-treated thin films exhibited good reversible electrochromic behavior while the porous TiO 2 /WO 3 composite film exhibited improved electrochromic properties

The evolution of droplet impacting on thin liquid film at superhydrophilic surface

Science.gov (United States)

Li, Yun; Zheng, Yi; Lan, Zhong; Xu, Wei; Ma, Xuehu

2017-12-01

Thin films are ubiquitous in nature, and the evolution of a liquid film after droplet impact is critical in many industrial processes. In this paper, a series of experiments and numerical simulations are conducted to investigate the distribution and evolution features of local temperature as the droplet impacts a thin film on the superhydrophilic surface by the thermal tracing method. A cold area is formed in the center after droplet impacts on heated solid surfaces. For the droplet impact on thin heated liquid film, a ring-shaped low temperature zone is observed in this experiment. Meanwhile, numerical simulation is adopted to analyze the mechanism and the interaction between the droplet and the liquid film. It is found that due to the vortex velocity distribution formed inside the liquid film after the impact, a large part of the droplet has congested. The heating process is not obvious in the congested area, which leads to the formation of a low-temperature area in the results.

Characterization of Alq3 thin films by a near-field microwave microprobe.

Science.gov (United States)

Hovsepyan, Artur; Lee, Huneung; Sargsyan, Tigran; Melikyan, Harutyun; Yoon, Youngwoon; Babajanyan, Arsen; Friedman, Barry; Lee, Kiejin

2008-09-01

We observed tris-8-hydroxyquinoline aluminum (Alq3) thin films dependence on substrate heating temperatures by using a near-field microwave microprobe (NFMM) and by optical absorption at wavelengths between 200 and 900 nm. The changes of absorption intensity at different substrate heating temperatures are correlated to the changes in the sheet resistance of Alq3 thin films.

Synthesis of thin films by the pyrosol process

Directory of Open Access Journals (Sweden)

Tucić Aleksandar

2002-01-01

Full Text Available Among many aerosol routes, the Pyrosol process, due to its simplicity, low cost and quality of obtained films, represents a promising technique for the synthesis of thin films. The pyrosol process is based on the transport and pyrolysls of an aerosol of processor solution, generated in an ultrasonic atomizer, on a heated substrate. The theoretical principles of the pyrosol process are presented in this paper, as well as the influence of some synthesis parameters on the deposition of SnO2 thin films.

Structural characterization of the nickel thin film deposited by glad technique

Directory of Open Access Journals (Sweden)

Potočnik J.

2013-01-01

Full Text Available In this work, a columnar structure of nickel thin film has been obtained using an advanced deposition technique known as Glancing Angle Deposition. Nickel thin film was deposited on glass sample at the constant emission current of 100 mA. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The obtained nickel thin film was characterized by Force Modulation Atomic Force Microscopy and by Scanning Electron Microscopy. Analysis indicated that the formation of the columnar structure occurred at the film thickness of 1 μm, which was achieved for the deposition time of 3 hours. [Projekat Ministarstva nauke Republike Srbije, br. III45005

Magnetite thin films: A simulational approach

International Nuclear Information System (INIS)

Mazo-Zuluaga, J.; Restrepo, J.

2006-01-01

In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent ν=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed

Perovskite phase thin films and method of making

Science.gov (United States)

Boyle, Timothy J.; Rodriguez, Mark A.

2000-01-01

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Two-stage crossover from thermal to quantum flux creep of dilute vortex ensembles in various high-Tc superconducting thin films

International Nuclear Information System (INIS)

Akerman, Johan J.; Venturini, E. L.; Siegal, M. P.; Yun, S. H.; Karlsson, U. O.; Rao, K. V.

2001-01-01

The thermal-to-quantum flux creep crossover at low vortex densities has been studied in YBa 2 Cu 3 O 7 , TlBa 2 CaCu 2 O 7-δ , and HgBa 2 CaCu 2 O 6+δ thin films using ac susceptibility. The crossover temperatures T cr are 10--11, 17, and 30 K, respectively. Both thermal and quantum flux creep is suppressed as the vortex density is decreased. We observe a two-stage nature in the crossover behavior which appears to be a general property of all the three materials studied

Dense zig-zag microstructures in YSZ thin films by pulsed laser deposition

Science.gov (United States)

Stender, Dieter; Schäuble, Nina; Weidenkaff, Anke; Montagne, Alex; Ghisleni, Rudy; Michler, Johann; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

2015-01-01

The very brittle oxygen ion conductor yttria stabilized zirconia (YSZ) is a typical solid electrolyte for miniaturized thin film fuel cells. In order to decrease the fuel cell operating temperature, the thickness of yttria stabilized zirconia thin films is reduced. Often, these thin membranes suffer from mechanical failure and gas permeability. To improve these mechanical issues, a glancing angle deposition approach is used to grow yttria stabilized zirconia thin films with tilted columnar structures. Changes of the material flux direction during the deposition result in a dense, zigzag-like structure with columnar crystallites. This structure reduces the elastic modulus of these membranes as compared to columnar yttria stabilized zirconia thin films as monitored by nano-indentation which makes them more adaptable to applied stress.

Dense zig-zag microstructures in YSZ thin films by pulsed laser deposition

Directory of Open Access Journals (Sweden)

Dieter Stender

2015-01-01

Full Text Available The very brittle oxygen ion conductor yttria stabilized zirconia (YSZ is a typical solid electrolyte for miniaturized thin film fuel cells. In order to decrease the fuel cell operating temperature, the thickness of yttria stabilized zirconia thin films is reduced. Often, these thin membranes suffer from mechanical failure and gas permeability. To improve these mechanical issues, a glancing angle deposition approach is used to grow yttria stabilized zirconia thin films with tilted columnar structures. Changes of the material flux direction during the deposition result in a dense, zigzag-like structure with columnar crystallites. This structure reduces the elastic modulus of these membranes as compared to columnar yttria stabilized zirconia thin films as monitored by nano-indentation which makes them more adaptable to applied stress.

Optimisation of chemical solution deposition of indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Sunde, Tor Olav Løveng; Einarsrud, Mari-Ann; Grande, Tor, E-mail: grande@ntnu.no

2014-12-31

An environmentally friendly aqueous sol–gel process has been optimised to deposit indium tin oxide (ITO) thin films, aiming to improve the film properties and reduce the deposition costs. It was demonstrated how parameters such as cation concentration and viscosity could be applied to modify the physical properties of the sol and thereby reduce the need for multiple coatings to yield films with sufficient conductivity. The conductivity of the thin films was enhanced by adjusting the heat treatment temperature and atmosphere. Both increasing the heat treatment temperature of the films from 530 to 800 °C and annealing in reducing atmosphere significantly improved the electrical conductivity, and conductivities close to the state of the art sputtered ITO films were obtained. A pronounced decreased conductivity was observed after exposing the thin films to air and the thermal reduction and ageing of the film was studied by in situ conductivity measurements. - Highlights: • Spin coating of indium tin oxide using an aqueous solution was optimised. • The conductivity was enhanced by thermal annealing in reducing atmosphere. • The conductivity of is comparable to the conductivity of sputtered films. • A relaxation process in the reduced thin film was observed after exposure in air.

Thin films of copper antimony sulfide: A photovoltaic absorber material

Energy Technology Data Exchange (ETDEWEB)

Ornelas-Acosta, R.E. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Shaji, S. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico)

2015-01-15

Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

Zeta-potential of fouled thin film composite membrane

Energy Technology Data Exchange (ETDEWEB)

Ikeda, K.; Hachisuka, H.; Nakamura, T. [Nitto denko Corp., Ibaraki, (Japan); Kimura, S. [Kogakuin University, Tokyo (Japan). Dept. of Environ. Chemical Engineering; Ueyama, K. [Osaka University, Osaka (Japan). Dept. of Chemical Engineering

1999-10-01

The surface zeta-potential of a cross-linked polyamide thin film composite reverse osmosis membrane was measured using an electrophoresis method. It was confirmed that this method could be effectively applied to analyze the fouling of such membranes. It is known that the water flux of membranes drastically decreases as a result of fouling by surfactants. Although the surfactants adsorbed on reverse osmosis membranes could not be detected by conventional methods such as SEM, EDX and FT-IR, their presence could be clarified by the profile measurements of the surface zeta-potential. The profiles of the membrane surface zeta-potentials changed to more positive values in the measured pH range as a result of fouling by cationic or amphoteric surfactants. This measuring method of surface zeta-potentials allowed us to analyze a very small amount of fouling of a thin film composite reverse osmosis membrane. This method could be used to analyze the fouled surface of the thin film composite reverse osmosis membrane which is used for production of ultrapure water and shows a remarkable decrease in flux. It also became clear that this method is easy and effective for the reverse osmosis membrane surface analysis of adsorbed materials such as surfactants. (author)

Solid thin film materials for use in thin film charge-coupled devices

International Nuclear Information System (INIS)

Lynch, S.J.

1983-01-01

Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

Magnetic and magneto-optical properties of FeRh thin films

International Nuclear Information System (INIS)

Inoue, Sho; Nam, Nguyen T.; Phuoc, Nguyen N.; Cao Jiangwei; Yu Ko, Hnin Yu; Suzuki, Takao

2008-01-01

The magnetic and magneto-optical properties of FeRh thin films epitaxially deposited onto MgO(1 0 0) substrates by RF sputter-deposition system have been investigated in conjunction with the structure. An intriguing virgin effect has been found in the M-T curves of the as-deposited FeRh thin films, which is presumably interpreted in term of a change in structural phase when heating. Also, a (negative) maximum peak of Kerr rotation at around 3.8 eV has been observed when FeRh thin films are in ferromagnetic state. The polar Kerr rotation angle is found to increase at temperatures above 100 deg. C, which corresponds to the antiferromagnet (AF)-ferromagnet (FM) transition of FeRh thin films

Optimizing critical heat flux enhancement through nano-particle-based surface modifications

International Nuclear Information System (INIS)

Truong, B.; Hu, L. W.; Buongiorno, J.

2008-01-01

Colloidal dispersions of nano-particles, also known as nano-fluids, have shown to yield significant Critical Heat Flux (CHF) enhancement. The CHF enhancement mechanism in nano-fluids is due to the buildup of a porous layer of nano-particles upon boiling. Unlike microporous coatings that had been studied extensively, nano-particles have the advantages of forming a thin layer on the substrate with surface roughness ranges from the sub-micron to several microns. By tuning the chemical properties it is possible to coat the nano-particles in colloidal dispersions onto the desired surface, as has been demonstrated in engineering thin film industry. Building on recent work conducted at MIT, this paper illustrates the maximum CHF enhancement that can be achieved based on existing correlations. Optimization of the CHF enhancement by incorporation of key factors, such as the surface wettability and roughness, will also be discussed. (authors)

High performance thin-film composite forward osmosis membrane.

Science.gov (United States)

Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A; Schiffman, Jessica D; Elimelech, Menachem

2010-05-15

Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 mum) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m(2-)h(-1), while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution.

High Performance Thin-Film Composite Forward Osmosis Membrane

KAUST Repository

Yip, Ngai Yin

2010-05-15

Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 μm) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m2-h-1, while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution. © 2010 American Chemical Society.

Soft chemistry routes to transparent metal oxide thin films. The case of sol–gel synthesis and structural characterization of Ta2O5 thin films from tantalum chloromethoxide

International Nuclear Information System (INIS)

Epifani, Mauro; Zamani, Reza; Arbiol, Jordi; Fabrega, Cristian; Andreu, Teresa; Pace, Giovanni Battista; Siciliano, Pietro; Morante, Joan R.

2014-01-01

Ta 2 O 5 thin films were prepared by spin-coating methanol solutions of Ta chloromethoxide. It was prepared by reacting TaCl 5 with methanol, followed by water addition (H 2 O: Ta molar ratio was 16). Thin films were deposited by spin-coating onto SiO 2 /Si substrates, followed by drying at 90 °C and heat-treatment up to 700 °C. The films were characterized by X-ray diffraction, transmission electron microscopy and field emission scanning electron microscopy. Crystallization was obtained only after heating at 700 °C, in the Ta 2 O 5 orthorhombic phase. The resulting films had a thickness of 100 nm. Their structure was constituted by porous crystals with size up to 50 nm, while the pores had a size of about 10 nm. The results demonstrated that TaCl 5 is very convenient precursor for the wet chemical synthesis of Ta 2 O 5 thin films. - Highlights: • Development of convenient solution synthesis of Ta 2 O 5 thin films; • The precursor chemistry was established and related to the synthesis process; • Uniform films crystallized in the most stable orthorombic Ta 2 O 5 phase;

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Prediction of transient maximum heat flux based on a simple liquid layer evaporation model

International Nuclear Information System (INIS)

Serizawa, A.; Kataoka, I.

1981-01-01

A model of liquid layer evaporation with considerable supply of liquid has been formulated to predict burnout characteristics (maximum heat flux, life, etc.) during an increase of the power. The analytical description of the model is built upon the visual and photographic observations of the boiling configuration at near peak heat flux reported by other investigators. The prediction compares very favourably with water data presently available. It is suggested from the work reported here that the maximum heat flux occurs because of a balance between the consumption of the liquid film on the heated surface and the supply of liquid. Thickness of the liquid film is also very important. (author)

ANL ITER high-heat-flux blanket-module heat transfer experiments

International Nuclear Information System (INIS)

Kasza, K.E.

1992-02-01

An Argonne National Laboratory facility for conducting tests on multilayered slab models of fusion blanket designs is being developed; some of its features are described. This facility will allow testing under prototypic high heat fluxes, high temperatures, thermal gradients, and variable mechanical loadings in a helium gas environment. Steady and transient heat flux tests are possible. Electrical heating by a two-sided, thin stainless steel (SS) plate electrical resistance heater and SS water-cooled cold panels placed symmetrically on both sides of the heater allow achievement of global one-dimensional heat transfer across blanket specimen layers sandwiched between the hot and cold plates. The heat transfer characteristics at interfaces, as well as macroscale and microscale thermomechanical interactions between layers, can be studied in support of the ITER engineering design effort. The engineering design of the test apparatus has shown that it is important to use multidimensional thermomechanical analysis of sandwich-type composites to adequately analyze heat transfer. This fact will also be true for the engineering design of ITER

Thin film processes II

CERN Document Server

Kern, Werner

1991-01-01

This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

Simple gun for vapor deposition of organic thin films

International Nuclear Information System (INIS)

Sato, N.; Seki, K.; Inokuchi, H.

1987-01-01

A simple evaporation gun for preparing organic thin films was fabricated using commercially available parts of an electron gun for a TV Braun tube. The device permits sample heating to be easily controlled because of the small heat capacity

Transient critical heat flux under flow coast-down in vertical annulus with non-uniform heat flux distribution

International Nuclear Information System (INIS)

Moon, S.K.; Chun, S.Y.; Choi, K.Y.; Yang, S.K.

2001-01-01

An experimental study on transient critical heat flux (CHF) under flow coast-down has been performed for water flow in a non-uniformly heated vertical annulus under low flow and a wide range of pressure conditions. The objectives of this study are to systematically investigate the effect of the flow transient on the CHF and to compare the transient CHF with steady state CHF. The transient CHF experiments have been performed for three kinds of flow transient modes based on the coast-down data of the Kori 3/4 nuclear power plant reactor coolant pump. Most of the CHFs occurred in the annular-mist flow regime. Thus, it means that the possible CHF mechanism might be the liquid film dryout in the annular-mist flow regime. For flow transient mode with the smallest flow reduction rate, the time-to-CHF is the largest. At the same inlet subcooling, system pressure and heat flux, the effect of the initial mass flux on the critical mass flux can be negligible. However, the effect of the initial mass flux on the time-to-CHF becomes large as the heat flux decreases. Usually, the critical mass flux is large for slow flow reduction. There is a pressure effect on the ratio of the transient CHF data to steady state CHF data. Some conventional correlations show relatively better CHF prediction results for high system pressure, high quality and slow transient modes than for low system pressure, low quality and fast transient modes. (author)

Development of CuInTe{sub 2} thin film solar cells by electrochemical route with low temperature (80 °C) heat treatment procedure

Energy Technology Data Exchange (ETDEWEB)

Lakhe, Manorama [Electrochemical Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Mahapatra, S.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India); Chaure, Nandu B., E-mail: n.chaure@physics.unipune.ac.in [Electrochemical Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-02-15

Graphical abstract: Dark and illuminated J–V characteristic for Cell B, successively heat treated at 80 °C for 60 min and corresponding dV/d(J + J{sub L}) versus 1/(J + J{sub L}) plot. Efficiency, η = 3.8%, series resistance, R{sub s} = 43 Ω and ideality factor, n = 1.9 are measured for Cell B. - Highlights: • Temperature, 80 °C is sufficient to produce highly crystalline CuInTe{sub 2} thin films. • Stoichiometric, uniform and well adherent thin films of CuInTe{sub 2} were electrodeposited. • 3.8% efficiency was measured for a cell prepared by successive heat treatment at 80 °C. • ‘R{sub s}’ and ‘n’ investigated for Cell A and B were 47, 43 Ω and 2.0 and 1.9, respectively. - Abstract: The effect of successive low-temperature heat treatment on the properties of electrodeposited CuInTe{sub 2} (CIT) thin films is investigated. The electrodeposition potential, −0.8 V versus Ag/AgCl was optimized by cyclic voltammetry onto CdS coated Fluorine doped tin oxide substrate. The samples were successively heat treated at 80 °C for 5, 30 and 60 min in an air ambient. The structural, morphological, compositional, electrical and optoelectronic properties were studied using XRD, Raman spectroscopy, SEM, FESEM, EDS, Current–Voltage and Capacitance–Voltage measurements. As-prepared CIT film exhibited amorphous nature, whereas the systematic development in the crystallinity was observed in successively heat treated samples. Compact, densely packed, globular surface morphology was observed. The Cu/In ratio was found to be increased systematically from 0.60 to 0.82 with heat treatment duration. The solar cell devices successively heat treated at 80 °C for 30 and 60 min measured an efficiency (η), 3.4% and 3.8%, respectively.

Magnetic Property in Large Array Niobium Antidot Thin Films

Science.gov (United States)

Tinghui, Chen; Hsiang-Hsi, Kung; Wei-Li, Lee; Institute of Physics, Academia Sinica, Taipei, Taiwan Team

2014-03-01

In a superconducting ring, the total flux inside the ring is required to be an integer number of the flux quanta. Therefore, a supercurrent current can appear within the ring in order to satisfy this quantization rule, which gives rise to certain magnetic response. By using a special monolayer polymer/nanosphere hybrid we developed previously, we fabricated a series of superconducting niobium antidot thin films with different antidot diameters. The antidots form well-ordered triangular lattice with a lattice spacing about 200 nm and extend over an area larger than 1 cm2, which enables magnetic detections simply by a SQUID magnetometer. We observed magnetization oscillation with external magnetic field due to the supercurrent screening effect, where different features for large and small antidot thin films were found. Detailed size and temperature dependencies of the magnetization in niobium antidot nanostructures will be presented.

Feasibility Study of Thin Film Thermocouple Piles

Science.gov (United States)

Sisk, R. C.

2001-01-01

Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

Steady-state nucleate pool boiling mechanism at low heat fluxes

International Nuclear Information System (INIS)

Bastos, L.E.G.

1979-01-01

Heat is transfered in the steady state to a horizontal cooper disc inmersed in water at saturation temperature. Levels of heat flux are controlled so that convection and the nucleate boiling can be observed. The value of heat flux is determined experimentally and high speed film is used to record bubble growth. In order to explain the phenomenon the oretical model is proposed in which part of the heat is transfered by free convection during nucleate boiling regime. Agreement between the experiments and the theoretical model is good. (Author) [pt

Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

Energy Technology Data Exchange (ETDEWEB)

Morley, Neil B. [Univ. of California, Los Angeles, CA (United States)

1994-01-01

Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along {rvec B}. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization.

Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

International Nuclear Information System (INIS)

Morley, N.B.

1994-01-01

Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along rvec B. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization

Thermal conductivity of nanoscale thin nickel films

Institute of Scientific and Technical Information of China (English)

YUAN Shiping; JIANG Peixue

2005-01-01

The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

ITO thin films prepared by a microwave heating

International Nuclear Information System (INIS)

Okuya, Masayuki; Ito, Nobuyuki; Shiozaki, Katsuyuki

2007-01-01

ITO thin films were prepared by irradiating 2.45 GHz of microwave with an output power of 700 W using a commercial kitchen microwave oven. A substrate temperature went up and down rapidly between 100 and 650 deg. C in a minute by a dielectric loss of SnO 2 layer pre-deposited on a glass substrate. We found that the electrical and optical properties of films were affected by the atmosphere in a microwave irradiation, while the sintering was completed within a few minutes. Although the electrical resistivity was not reduced below 5.0 x 10 -4 Ω.cm in this study, the results lead to the possibility of a practical rapid synthesis of ITO transparent conducting oxide films

Molecular dynamics simulation of Cu/Au thin films under temperature gradient

International Nuclear Information System (INIS)

Li, Qibin; Peng, Xianghe; Peng, Tiefeng; Tang, Qizhong; Zhang, Xiaomin; Huang, Cheng

2015-01-01

Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.

Molecular dynamics simulation of Cu/Au thin films under temperature gradient

Energy Technology Data Exchange (ETDEWEB)

Li, Qibin, E-mail: qibinli@cqu.edu.cn [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Peng, Xianghe [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Peng, Tiefeng, E-mail: pengtiefeng@cqu.edu.cn [State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Tang, Qizhong [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Zhang, Xiaomin [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Huang, Cheng [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China)

2015-12-01

Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.

Modeling of metal thin film growth: Linking angstrom-scale molecular dynamics results to micron-scale film topographies

Science.gov (United States)

Hansen, U.; Rodgers, S.; Jensen, K. F.

2000-07-01

A general method for modeling ionized physical vapor deposition is presented. As an example, the method is applied to growth of an aluminum film in the presence of an ionized argon flux. Molecular dynamics techniques are used to examine the surface adsorption, reflection, and sputter reactions taking place during ionized physical vapor deposition. We predict their relative probabilities and discuss their dependence on energy and incident angle. Subsequently, we combine the information obtained from molecular dynamics with a line of sight transport model in a two-dimensional feature, incorporating all effects of reemission and resputtering. This provides a complete growth rate model that allows inclusion of energy- and angular-dependent reaction rates. Finally, a level-set approach is used to describe the morphology of the growing film. We thus arrive at a computationally highly efficient and accurate scheme to model the growth of thin films. We demonstrate the capabilities of the model predicting the major differences on Al film topographies between conventional and ionized sputter deposition techniques studying thin film growth under ionized physical vapor deposition conditions with different Ar fluxes.

Pyrolyzed thin film carbon

Science.gov (United States)

Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

2010-01-01

A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

Platinum containing amorphous hydrogenated carbon (a-C:H/Pt) thin films as selective solar absorbers

International Nuclear Information System (INIS)

Lan, Yung-Hsiang; Brahma, Sanjaya; Tzeng, Y.H.; Ting, Jyh-Ming

2014-01-01

We have investigated a double-cermet structured thin film in which an a-C:H thin film was used as an anti-reflective (AR) layer and two platinum-containing amorphous hydrogenated carbon (a-C:H/Pt) thin films were used as the double cermet layers. A reactive co-sputter deposition method was used to prepare both the anti-reflective and cermet layers. Effects of the target power and heat treatment were studied. The obtained films were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy. The optical absorptance and emittance of the as deposited and annealed films were determined using UV–vis-NIR spectroscopy. We show that the optical absorptance of the resulting double-cermet structured thin film is as high as 96% and remains to be 91% after heat treatment at 400 °C, indicating the thermal stability of the film

Microstructural stability of spark-plasma-sintered Wf/W composite with zirconia interface coating under high-heat-flux hydrogen beam irradiation

Directory of Open Access Journals (Sweden)

M. Avello de Lama

2017-12-01

In this paper, the durability and chemical stability of Wf/W composite specimens under cyclic heat-flux loads up to 20 MW/m² (surface temperature: 1260 °C was investigated using hydrogen neutral beam. The bulk material was fabricated by means of spark-plasma-sintering (SPS method using fine tungsten powder and a stack of tungsten wire meshes as reinforcement where the surface of the wire was coated with zirconia thin film to produce an engineered interface. The impact of plasma beam irradiation on microstructure was examined for two kinds of specimens produced at different sintering temperatures, 1400 °C and 1700 °C. Results of microscopic (SEM and chemical (EDX analysis are presented comparing the microstructure and element distribution maps obtained before and after heat flux loading. Effects of different sintering temperatures on damage behaviour are discussed. The present composite materials are shown to be applicable as plasma-facing material for high-heat-flux components.

Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

International Nuclear Information System (INIS)

Miller, K.T.

1991-01-01

Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

International Nuclear Information System (INIS)

Pena, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vazquez, A.; Gomez, I.; Elizondo, P.

2011-01-01

In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2 S 3 ) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

thin films

Indian Academy of Sciences (India)

microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

Transient heat transfer characteristics of liquid helium

International Nuclear Information System (INIS)

Tsukamoto, Osami

1976-01-01

The transient heat transfer characteristics of liquid helium are investigated. The critical burnout heat fluxes for pulsive heating are measured, and empirical relations between the critical burnout heat flux and the length of the heat pulse are given. The burnout is detected by observing the super-to-normal transition of the temperature sensor which is a thin lead film prepared on the heated surface by vacuum evaporation. The mechanism of boiling heat transfer for pulsive heating is discussed, and theoretical relations between the critical burnout heat flux and the length of the heat pulse are derived. The empirical data satisfy the theoretical relations fairly well. (auth.)

Magnetization in permalloy thin films

Indian Academy of Sciences (India)

Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron ... alloys of Ni and Fe) take an important place. NiFe alloy with a ... room temperature (∼298 K, without intentional heating) on Si(100) substrates. A base pressure of 1×10−6 mbar was achieved prior to the deposition. Three different ...

Progress in thin film techniques

International Nuclear Information System (INIS)

Weingarten, W.

1996-01-01

Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

Particulates reduction in laser-ablated YBa2Cu3O7-δ thin films by laser-induced plume heating

International Nuclear Information System (INIS)

Koren, G.; Baseman, R.J.; Gupta, A.; Lutwyche, M.I.; Laibowitz, R.B.

1990-01-01

Experimental demonstration of reduction in the number and size of particulates formed in the laser ablation deposition of YBa 2 Cu 3 O 7-δ thin films is obtained by the use of a second laser which further heats and fragments the blowoff material in the plume formed by the first laser. This results in a smoother film with higher critical current density as compared to that obtained without the second laser irradiation of the plume

Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

Science.gov (United States)

Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

2013-05-22

Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

AC susceptibility of thin Pb films in intermediate and mixed state

Energy Technology Data Exchange (ETDEWEB)

Janu, Zdenek, E-mail: janu@fzu.cz [Institute of Physics of the AS CR, v.v.i., Na Slovance 2, CZ-182 21 Prague 8 (Czech Republic); Svindrych, Zdenek [Institute of Physics of the AS CR, v.v.i., Na Slovance 2, CZ-182 21 Prague 8 (Czech Republic); Trunecek, Otakar [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, CZ-121 16 Prague 2 (Czech Republic); Kus, Peter; Plecenik, Andrej [Komenius University in Bratislava, Faculty of Mathematics, Physics, and Informatics, Mlynska dolina, 842 48 Bratislava 4 (Slovakia)

2011-12-15

Thickness dependent transition in AC susceptibility between intermediate and mixed state in type-I superconducting films. The temperature induced crossover between reversible and irreversible behavior was observed in the thicker film. The temperature dependence of the AC susceptibility in mixed state follows prediction of model based on Bean critical state. The temperature dependence of the harmonics of the complex AC susceptibility in the intermediate state is explained. Thin films of type I superconductors of a thickness comparable or less than a flux penetration length behave like type II superconductors in a mixed state. With decreasing film thickness normal domains carrying a magnetic flux get smaller with smaller number of flux quanta per domain and finally transform into single quantum flux lines, i.e. quantum vortices similar to those found in type II superconductors. We give an evidence of this behavior from the measurements of the nonlinear response of a total magnetic moment to an applied AC magnetic field, directly from the temperature dependence of an AC susceptibility.

Spray pyrolysis process for preparing superconductive films

International Nuclear Information System (INIS)

Hsu, H.M.; Yee, I.Y.

1991-01-01

This paper describes a spray pyrolysis method for preparing thin superconductive film. It comprises: preparing a spray pyrolysis solution comprising Bi,Sr,Ca and Cu metals in a solvent; heating a substrate to a first temperature; spraying the solution onto the heated substrate to form a film thereon; heating the film and substrate to a second temperature of about 700 degrees-825 degrees C, the second temperature being higher than the first temperature; heating the film and substrate to a third temperature of about 870 degrees-890 degrees C to melt the film; once the film and substrate reach the third temperature, further heat treating the film and substrate; cooling the film and substrate to ambient temperature. This patent also describes a spray pyrolysis method for preparing thin superconductive films. It comprises: preparing a spray pyrolysis solution comprising Bi, Ca and Cu metals and fluxing agent in a solvent; heating a substrate to a first temperature; spraying the solution onto the heated substrate to form a film thereon; heating the film and substrate to a second temperature about 700 degrees-825 degrees C, the second temperature being higher than the first temperature; heating the film and substrate at a third temperature about 840 degrees-860 degrees C; and cooling the film and substrate to ambient temperature

Preparation and characterization of ZnO transparent semiconductor thin films by sol-gel method

International Nuclear Information System (INIS)

Tsay, Chien-Yie; Fan, Kai-Shiung; Chen, Sih-Han; Tsai, Chia-Hao

2010-01-01

Transparent semiconductor thin films of zinc oxide (ZnO) were deposited onto alkali-free glass substrates by the sol-gel method and spin-coating technique. In this study, authors investigate the influence of the heating rate of the preheating process (4 or 10 o C/min) on the crystallization, surface morphology, and optical properties of sol-gel derived ZnO thin films. The ZnO sol was synthesized by dissolving zinc acetate dehydrate in ethanol, and then adding monoethanolamine. The as-coated films were preheated at 300 o C for 10 min and annealed at 500 o C for 1 h in air ambiance. Experimental results indicate that the heating rate of the preheating process strongly affected the surface morphology and transparency of ZnO thin film. Specifically, a heating rate of 10 o C/min for the preheating process produces a preferred orientation along the (0 0 2) plane and a high transmittance of 92% at a wavelength of 550 nm. Furthermore, this study reports the fabrication of thin-film transistors (TFTs) with a transparent ZnO active channel layer and evaluates their electrical performance.

Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

Directory of Open Access Journals (Sweden)

Swati Arora

2017-01-01

Full Text Available Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te and bismuth (Bi were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD and scanning electron microscopy (SEM to show granular growth.

The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

Science.gov (United States)

Harris Odum, Nicole Latrice

Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

In-situ observations of stress-induced thin film failures

Energy Technology Data Exchange (ETDEWEB)

Zhao, Z.B., E-mail: zzhao@firstsolar.co [Delphi Research Labs, 51786 Shelby Parkway, Shelby Twp., MI 48315 (United States); Hershberger, J. [Laird Technologies, 4707 Detroit Avenue, Cleveland, Ohio, 44102 (United States); Bilello, J.C. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109-2136 (United States)

2010-02-01

In this work, the failure modes of thin films under thermo-mechanical treatments were observed via in-situ white beam X-ray topography. The in-situ experiments were carried out using an experimental setup on Beamline 2-2 at the Stanford Synchrotron Radiation Laboratory. Magnetron sputtered polycrystalline thin films of Ta and CrN on Si substrates were selected for the present study due to their disparate states of intrinsic residual stresses: the Ta film was anisotropically compressive and the CrN film was isotropically tensile. Under a similar heating-cooling cycle in air, the two types of films exhibited distinct failure modes, which were observed in-situ and in a quasi-real-time fashion. The failures of the samples have been interpreted based on their distinctive growth stress states, superimposed on the additional stress development associated with different forms of thermal instabilities upon heating. These included the formation of oxide for the Ta/Si sample, which led to an increase in compressive stress, and a phase change for the CrN/Si sample, which caused the isotropic stress in the film to become increasingly tensile.

In-situ observations of stress-induced thin film failures

International Nuclear Information System (INIS)

Zhao, Z.B.; Hershberger, J.; Bilello, J.C.

2010-01-01

In this work, the failure modes of thin films under thermo-mechanical treatments were observed via in-situ white beam X-ray topography. The in-situ experiments were carried out using an experimental setup on Beamline 2-2 at the Stanford Synchrotron Radiation Laboratory. Magnetron sputtered polycrystalline thin films of Ta and CrN on Si substrates were selected for the present study due to their disparate states of intrinsic residual stresses: the Ta film was anisotropically compressive and the CrN film was isotropically tensile. Under a similar heating-cooling cycle in air, the two types of films exhibited distinct failure modes, which were observed in-situ and in a quasi-real-time fashion. The failures of the samples have been interpreted based on their distinctive growth stress states, superimposed on the additional stress development associated with different forms of thermal instabilities upon heating. These included the formation of oxide for the Ta/Si sample, which led to an increase in compressive stress, and a phase change for the CrN/Si sample, which caused the isotropic stress in the film to become increasingly tensile.

Correlation between abnormal deuterium flux and heat flow in a D/Pd system

International Nuclear Information System (INIS)

Li Xingzhong; Liu Bin; Tian Jian; Wei Qingming; Zhou Rui; Yu Zhiwu

2003-01-01

Deuterium flux through the thin wall of a palladium tube has been studied by monitoring gas pressure and temperature. A high-precision calorimeter (Calvet) was used to detect heat flow when the heater was shut down and the palladium tube was cooling down slowly. At certain temperatures an abnormal deuterium flux appeared. This deuterium flux reached a peak when the temperature of the palladium was decreasing. This abnormal deuterium flux differs from the monotonic feature of a normal diffusive flux and is accompanied by a heat flow

Laser short-pulse heating of an aluminum thin film: Energy transfer in electron and lattice sub-systems

Energy Technology Data Exchange (ETDEWEB)

Bin Mansoor, Saad; Sami Yilbas, Bekir, E-mail: bsyilbas@kfupm.edu.sa

2015-08-15

Laser short-pulse heating of an aluminum thin film is considered and energy transfer in the film is formulated using the Boltzmann equation. Since the heating duration is short and the film thickness is considerably small, thermal separation of electron and lattice sub-systems is incorporated in the analysis. The electron–phonon coupling is used to formulate thermal communication of both sub-systems during the heating period. Equivalent equilibrium temperature is introduced to account for the average energy of all phonons around a local point when they redistribute adiabatically to an equilibrium state. Temperature predictions of the Boltzmann equation are compared with those obtained from the two-equation model. It is found that temperature predictions from the Boltzmann equation differ slightly from the two-equation model results. Temporal variation of equivalent equilibrium temperature does not follow the laser pulse intensity in the electron sub-system. The time occurrence of the peak equivalent equilibrium temperature differs for electron and lattice sub-systems, which is attributed to phonon scattering in the irradiated field in the lattice sub-system. In this case, time shift is observed for occurrence of the peak temperature in the lattice sub-system.

Laser short-pulse heating of an aluminum thin film: Energy transfer in electron and lattice sub-systems

International Nuclear Information System (INIS)

Bin Mansoor, Saad; Sami Yilbas, Bekir

2015-01-01

Laser short-pulse heating of an aluminum thin film is considered and energy transfer in the film is formulated using the Boltzmann equation. Since the heating duration is short and the film thickness is considerably small, thermal separation of electron and lattice sub-systems is incorporated in the analysis. The electron–phonon coupling is used to formulate thermal communication of both sub-systems during the heating period. Equivalent equilibrium temperature is introduced to account for the average energy of all phonons around a local point when they redistribute adiabatically to an equilibrium state. Temperature predictions of the Boltzmann equation are compared with those obtained from the two-equation model. It is found that temperature predictions from the Boltzmann equation differ slightly from the two-equation model results. Temporal variation of equivalent equilibrium temperature does not follow the laser pulse intensity in the electron sub-system. The time occurrence of the peak equivalent equilibrium temperature differs for electron and lattice sub-systems, which is attributed to phonon scattering in the irradiated field in the lattice sub-system. In this case, time shift is observed for occurrence of the peak temperature in the lattice sub-system

Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

Energy Technology Data Exchange (ETDEWEB)

Ehsani, M.H., E-mail: Ehsani@semnan.ac.ir [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Mehrabad, M. Jalali [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Kameli, P. [Department of Physics, Isfahan University of technology, Isfahan 8415683111 (Iran, Islamic Republic of)

2016-11-01

In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films. - Graphical abstract: Simulation results of the cobalt particles tracing sputtered from the source to substrate with an external magnetic field. Convergence of the particles flux (left) and also the spiral motion of the cobalt particles (right) increase dramatically as they approach the substrate and NdFe35 magnet. - Highlights: • The external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. • Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. • The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. • To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field

Photoluminescence properties of BaMoO4 amorphous thin films

International Nuclear Information System (INIS)

Marques, Ana Paula Azevedo; Melo, Dulce M.A. de; Longo, Elson; Paskocimas, Carlos A.; Pizani, Paulo S.; Leite, Edson R.

2005-01-01

BaMoO 4 amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO 4 was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance. The bond Mo-O present in BaMoO 4 was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 deg. C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 deg. C. The reflectivity spectra showed two bands, positioned at 3.38 and 4.37 eV that were attributed to the excitonic state of Ba 2+ and electronic transitions within MoO 2- 4 , respectively. The optical band gaps of BaMoO 4 were 3.38 and 2.19 eV, for crystalline (600 deg. C/2 h) and amorphous (200 deg. C/8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission band in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO 4 amorphous thin films suggested that this material is a highly promising candidate for photoluminescent applications

Effect of three-dimensional deformations on local heat transfer to a nonuniformly heated falling film of liquid

International Nuclear Information System (INIS)

Chinnov, E.A.; Kabov, O.A.

2004-01-01

The experimental study on the heat transfer by the water film heated vertical flow is studied within the Reynolds number values from 1 to 45. The chart of the liquid film flow modes is plotted and the heat exchange areas are separated. The data on the dependence of the temperature of the heater walls and local heat flux at the heater symmetry axis on the longitudinal coordinate are obtained. The local heat exchange coefficients are measured. The comparison of the experimental data with the numerical calculations for the smooth film is carried out. The effect of the jet flow formation on the heat transfer to the liquid film is analyzed [ru

Effects of crystallographic texture on stress-migration resistance in copper thin films

International Nuclear Information System (INIS)

Koike, J.; Wada, M.; Sanada, M.; Maruyama, K.

2002-01-01

The crystallographic texture of heat-treated Cu thin films and its effects on stress-migration resistance were studied as a function of film thickness within a range of 50-900 nm. All as-deposited films had (111) texture. After heat treatment at 723 K, texture transition from (111) to (100) was observed in films of thickness greater than 300 nm. The (111) texture films after heat treatment showed severe stress migration; in contrast, the (100) texture films showed no noticeable stress migration. The observed stress-migration resistance in the (100) texture films can be attributed to the absence of twins and to lower thermal stress as compared with the (111) texture films

Synthesis of photosensitive nanograined TiO2 thin films by SILAR method

International Nuclear Information System (INIS)

Patil, U.M.; Gurav, K.V.; Joo, Oh-Shim; Lokhande, C.D.

2009-01-01

Nanocrystalline TiO 2 thin films are deposited by simple successive ionic layer adsorption and reaction (SILAR) method on glass and fluorine-doped tin oxide (FTO)-coated glass substrate from aqueous solution. The as-deposited films are heat treated at 673 K for 2 h in air. The change in structural, morphological and optical properties are studied by means of X-ray diffraction (XRD), selected area electron diffraction (SAED), scanning electron microscopy (SEM), Fourier transform infrared (FTIR), transmission electron microscopy (TEM) and UV-vis-NIR spectrophotometer. The results show that the SILAR method allows the formation of anatase, nanocrystalline, and porous TiO 2 thin films. The heat-treated film showed conversion efficiency of 0.047% in photoelectrochemical cell with 1 M NaOH electrolyte.

Influence of Magnetic Field on Electric Charge Transport in Holomiun Thin Films at Low Temperatures

Directory of Open Access Journals (Sweden)

Jan Dudas

2005-01-01

Full Text Available Holmium thin films were prepared by evaporation in ultrahigh vacuum (UHV and high precision electrical resistance measurements were performed on them as well as on holomium bulk sample in the wide temperature range from 4,2 K up to the room temperature. Electric charge transport is profoundly influenced by the magnetic structure at low temperatures and a "knee-like" resistance anomaly was observed near the transportation from paramagnetic state to basal-plane spiral structure in bulk with the Neel temperature TN=128,9 K and below ~ 122 K in thin Ho films in a thickness range from 98 nm to 215 nm. Unexpected resistance minimum at ~ 9 K and a slope´s charge of the R vs. T curve near ~ 170 K was observed in 215 nm thin film. Application of magnetic field parallel to the substrate and thin film plane for temperatures below ~ 150 K caused the decrease of resistence value with increasing magnetic flux density. Increasing suppression of the TN value up to ~ 5 K with increasing flux density value up to 5 T was observed in Ho films. 

Soft chemistry routes to transparent metal oxide thin films. The case of sol–gel synthesis and structural characterization of Ta{sub 2}O{sub 5} thin films from tantalum chloromethoxide

Energy Technology Data Exchange (ETDEWEB)

Epifani, Mauro, E-mail: mauro.epifani@le.imm.cnr.it [Istituto per la Microelettronica e i Microsistemi, IMM-CNR, Via Monteroni, 73100 Lecce (Italy); Zamani, Reza [Catalonia Institute for Energy Research, IREC c/Jardins de les Dones de Negre, 1, 08930-Sant Adria del Besos, Barcelona (Spain); Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, 08193 Bellaterra, CAT (Spain); Arbiol, Jordi [Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, 08193 Bellaterra, CAT (Spain); Institucio Catalana de Recerca i Estudis Avançats, ICREA, 08010, Barcelona (Spain); Fabrega, Cristian; Andreu, Teresa [Catalonia Institute for Energy Research, IREC c/Jardins de les Dones de Negre, 1, 08930-Sant Adria del Besos, Barcelona (Spain); Pace, Giovanni Battista; Siciliano, Pietro [Istituto per la Microelettronica e i Microsistemi, IMM-CNR, Via Monteroni, 73100 Lecce (Italy); Morante, Joan R. [Catalonia Institute for Energy Research, IREC c/Jardins de les Dones de Negre, 1, 08930-Sant Adria del Besos, Barcelona (Spain); M2E-IN2UB-XaRMAE, Departament d’Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona, CAT (Spain)

2014-03-31

Ta{sub 2}O{sub 5} thin films were prepared by spin-coating methanol solutions of Ta chloromethoxide. It was prepared by reacting TaCl{sub 5} with methanol, followed by water addition (H{sub 2}O: Ta molar ratio was 16). Thin films were deposited by spin-coating onto SiO{sub 2}/Si substrates, followed by drying at 90 °C and heat-treatment up to 700 °C. The films were characterized by X-ray diffraction, transmission electron microscopy and field emission scanning electron microscopy. Crystallization was obtained only after heating at 700 °C, in the Ta{sub 2}O{sub 5} orthorhombic phase. The resulting films had a thickness of 100 nm. Their structure was constituted by porous crystals with size up to 50 nm, while the pores had a size of about 10 nm. The results demonstrated that TaCl{sub 5} is very convenient precursor for the wet chemical synthesis of Ta{sub 2}O{sub 5} thin films. - Highlights: • Development of convenient solution synthesis of Ta{sub 2}O{sub 5} thin films; • The precursor chemistry was established and related to the synthesis process; • Uniform films crystallized in the most stable orthorombic Ta{sub 2}O{sub 5} phase;.

Ceramic Composite Thin Films

Science.gov (United States)

Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Peltier cooling and onsager reciprocity in ferromagnetic thin films.

Science.gov (United States)

Avery, A D; Zink, B L

2013-09-20

We present direct measurements of the Peltier effect as a function of temperature from 77 to 325 K in Ni, Ni(80)Fe(20), and Fe thin films made using a suspended Si-N membrane structure. Measurement of the Seebeck effect in the same films allows us to directly test predictions of Onsager reciprocity between the Peltier and Seebeck effects. The Peltier coefficient Π is negative for both Ni and Ni(80)Fe(20) films and positive for the Fe film. The Fe film also exhibits a peak associated with the magnon drag Peltier effect. The observation of magnon drag in the Fe film verifies that the coupling between the phonon, magnon, and electron systems in the film is the same whether driven by heat current or charge current. The excellent agreement between Π values predicted using the experimentally determined Seebeck coefficient for these films and measured values offers direct experimental confirmation of the Onsager reciprocity between these thermoelectric effects in ferromagnetic thin films near room temperature.

Design of Faraday cup ion detectors built by thin film deposition

Energy Technology Data Exchange (ETDEWEB)

Szalkowski, G.A., E-mail: gszalkowski3@gatech.edu [Department of Nuclear Engineering, Georgia Institute of Technology, 770 State St., Atlanta, GA 30332 (United States); Darrow, D.S., E-mail: ddarrow@pppl.gov [Princeton Plasma Physics Laboratory, P. O. Box 451, Princeton, NJ 08543 (United States); Cecil, F.E., E-mail: fcecil@mines.edu [Department of Physics, Colorado School of Mines, Golden, CO 80401 (United States)

2017-03-11

Thin film Faraday cup detectors can provide measurements of fast ion loss from magnetically confined fusion plasmas. These multilayer detectors can resolve the energy distribution of the lost ions in addition to giving the total loss rate. Prior detectors were assembled from discrete foils and insulating sheets. Outlined here is a design methodology for creating detectors using thin film deposition that are suited to particular scientific goals. The intention is to use detectors created by this method on the Joint European Torus (JET) and the National Spherical Torus Experiment-Upgrade (NSTX-U). The detectors will consist of alternating layers of aluminum and silicon dioxide, with layer thicknesses chosen to isolate energies of interest. Thin film deposition offers the advantage of relatively simple and more mechanically robust construction compared to other methods, as well as allowing precise control of film thickness. Furthermore, this depositional fabrication technique places the layers in intimate thermal contact, providing for three-dimensional conduction and dissipation of the ion-produced heating in the layers, rather than the essentially two-dimensional heat conduction in the discrete foil stack implementation.

Temperature- and thickness-dependent elastic moduli of polymer thin films

Directory of Open Access Journals (Sweden)

Ao Zhimin

2011-01-01

Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

Ion beam heating of thin silicon membranes

International Nuclear Information System (INIS)

Tissot, P.E.; Hart, R.R.

1993-01-01

For silicon membranes irradiated by an ion beam in a vacuum environment, such as the masks used for ion beam lithography and the membranes used for thin film self-annealing, the heat transfer modes are radiation and limited conduction through the thin membrane. The radiation component depends on the total hemispherical emissivity which varies with the thickness and temperature of the membrane. A semiempirical correlation for the absorption coefficient of high resistivity silicon was derived and the variation of the total emissivity with temperature was computed for membranes with thicknesses between 0.1 and 10 μm. Based on this result, the temperatures reached during exposure to ion beams of varying intensities were computed. A proper modeling of the emissivity is shown to be important for beam heating of thin silicon membranes. (orig.)

X-ray-induced thinning of 3He and 3He/4He mixture films

International Nuclear Information System (INIS)

Penanen, Konstantin; Fukuto, Masafumi; Silvera, Isaac F.; Pershan, Peter

2000-01-01

Films of isotopic mixtures of helium have been studied using x-ray specular reflectivity techniques. In contrast with superfluid 4 He films, x-ray exposure causes a reduction in the thickness of 4 He films above the superfluid transition as well as films of pure 3 He and 3 He/ 4 He mixtures. One proposed model that could account for this effect is a charging model, in which thinning is caused by electrostatic pressure of free charges that accumulate on the helium surface. Unfortunately, this model is not fully consistent with all of the experimental observations. A localized heating model, in which indirect heating of the film causes it to thin would explain the data if there were dissipative film flow in the 3 He/ 4 He mixtures at temperatures where the bulk is superfluid. We argue that various published experimental results suggest such an effect. In this model, film thinning data for dilute 3 He/ 4 He films indicates dissipation that is linear in 3 He content of the film over two orders of magnitude

A novel epitaxially grown LSO-based thin-film scintillator for micro-imaging using hard synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Douissard, P.A.; Martin, T.; Chevalier, V.; Rack, A. [European Synchrotron Radiat Facil, F-38043 Grenoble, (France); Cecilia, A.; Baumbach, T.; Rack, A. [Karlsruhe Inst Technol ANKA, D-76021 Karlsruhe, (Germany); Couchaud, M. [CEA LETI, F-38054 Grenoble, (France); Dupre, K. [FEE GmbH, D-55743 Idar Oberstein, (Germany); Kuhbacher, M. [Helmholtz Zentrum Berlin Mat and Energie, D-14109 Berlin, (Germany)

2010-07-01

The efficiency of high-resolution pixel detectors for hard X-rays is nowadays one of the major criteria which drives the feasibility of imaging experiments and in general the performance of an experimental station for synchrotron-based microtomography and radiography. Here the luminescent screen used for the indirect detection is focused on in order to increase the detective quantum efficiency a novel scintillator based on doped Lu{sub 2}SiO{sub 5} (LSO), epitaxially grown as thin film via the liquid phase epitaxy technique. It is shown that, by using adapted growth and doping parameters as well as a dedicated substrate, the scintillation behaviour of a LSO-based thin crystal together with the high stopping power of the material allows for high-performance indirect X-ray detection. In detail, the conversion efficiency, the radioluminescence spectra, the optical absorption spectra under UV/visible-light and the afterglow are investigated. A set-up to study the effect of the thin-film scintillator's temperature on its conversion efficiency is described as well it delivers knowledge which is important when working with higher photon flux densities and the corresponding high heat load on the material. Additionally, X-ray imaging systems based on different diffraction-limited visible-light optics and CCD cameras using among others LSO-based thin film are compared. Finally, the performance of the LSO thin film is illustrated by imaging a honey bee leg, demonstrating the value of efficient high-resolution computed tomography for life sciences. (authors)

Investigation of phase transformation for ferrite–austenite structure in stainless steel thin films

Energy Technology Data Exchange (ETDEWEB)

Merakeb, Noureddine [Laboratory of Physical Metallurgy and Property of Materials (LM2PM), Metallurgy and Materials Engineering Department, Badji Mokhtar University, P.O. Box 12, Annaba 23000 (Algeria); Messai, Amel [Laboratoire d' Ingénierie et Sciences des Matériaux Avancés (ISMA), Institut des Sciences et Technologie, Abbès Laghrour University, Khenchela 40000 (Algeria); Ayesh, Ahmad I., E-mail: ayesh@qu.edu.qa [Department of Mathematics, Statistics and Physics, Qatar University, Doha (Qatar)

2016-05-01

In this work we report on phase transformation of 304 stainless steel thin films due to heat treatment. Ex-situ annealing was applied for evaporated 304 stainless steel thin films inside an ultra-high vacuum chamber with a pressure of 3 × 10{sup −7} Pa at temperatures of 500 °C and 600 °C. The structure of thin films was studied by X-ray diffraction (XRD) and conversion electron Mössbauer spectroscopy (CEMS) techniques. The results revealed a transformation from α-phase that exhibits a body-centered cubic structure (BCC) to γ-phase that exhibits a face-centered cubic (FCC) due to annealing. In addition, the percentage of γ-phase structure increased with the increase of annealing temperature. Annealing thin films increased the crystal size of both phases (α and γ), however, the increase was nonlinear. The results also showed that phase transformation was produced by recrystallization of α and γ crystals with a temporal evolution at each annealing temperature. The texture degree of thin films was investigated by XRD rocking curve method, while residual stress was evaluated using curvature method. - Highlights: • Stainless steel thin films were fabricated by thermal evaporation on quartz. • Alpha to gamma phase transformation of thin films was investigated. • Annealing of thin films reduces disruption in crystal lattice. • The stress of as-grown thin films was independent on the thin film thickness. • The stress of the thin films was reduced due to annealing.

Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

Critical heat fluxes and liquid distribution in annular channels in the dispersion-annular flow

International Nuclear Information System (INIS)

Boltenko, Eh.A.; Pomet'ko, R.S.

1984-01-01

On the basis of using the dependence of intensity of total mass transfer between the flux nucleus and wall film obtained for tubes with uniform heat release and taking into account the peculiarities of mass transfer between the flux nucleus and wall film in annular channels the technique for calculating the liquid distribution and critical capacity of annular channels with internal, external and bilateral heating at uniform and non-uniform heat release over the length is proposed. The calculation of annular channels critical capacity according to the suggested technique is performed. A satisfactory agreement of calculation results with the experimental data is attained

NMR characterization of thin films

Science.gov (United States)

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

Science.gov (United States)

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

The thickness of DLC thin film affects the thermal conduction of HPLED lights

Science.gov (United States)

Hsu, Ming Seng; Huang, Jen Wei; Shyu, Feng Lin

2016-09-01

Thermal dissipation had an important influence in the quantum effect and life of light emitting diodes (LED) because it enabled heat transfer away from electric devices to the aluminum plate for heat removal. In the industrial processing, the quality of the thermal dissipation was decided by the gumming technique between the PCB and aluminum plate. In this study, we made the ceramic thin films of diamond like carbon (DLC) by vacuum sputtering between the substrate and high power light emitting diodes (HPLED) light to check the influence of heat transfer by DLC thin films. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature of HPLEDs. The X-Ray photoelectron spectroscopy (XPS) patterns revealed that ceramic phases were successfully grown onto the substrate. At the same time, the real work temperatures showed the thickness of DLC thin film coating effectively affected the thermal conduction of HPLEDs.

Preparation and characterization of Zn Se thin films

CERN Document Server

Ganchev, M; Stratieva, N; Gremenok, V; Zaretskaya, E; Goncharova, O

2003-01-01

Chemical bath deposition technique for preparation of ZnSe thin films is presented. The influence of bath temperature and duration of deposition on film growth and quality has been studied. The effect of post-deposition annealing in different ambient is also discussed. It has been determined that heat treatment removes the oxygen-containing phase from the as-deposited films and improves crystallinity. The optical and electric properties of the deposits show their potential for an alternative buffer layer in chalcopyrite-based solar cells.

Handbook of thin film technology

CERN Document Server

Frey, Hartmut

2015-01-01

“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

DLC and AlN thin films influence the thermal conduction of HPLED light

Science.gov (United States)

Hsu, Ming Seng; Hsu, Ching Yao; Huang, Jen Wei; Shyu, Feng Lin

2015-08-01

Thermal dissipation had an important influence in the effect and life of light emitting diodes (LED) because it enables transfer the heat away from electric device to the aluminum plate that can be used for heat removal. In the industrial processing, the quality of the thermal dissipation decides by the gumming technique between the PCB and aluminum plate. In this study, we fabricated double layer ceramic thin films of diamond like carbon (DLC) and alumina nitride (AlN) by vacuum sputtering soldered the substrate of high power light emitting diodes (HPLED) light to check the heat conduction. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray photoelectron spectroscopy (XPS) patterns reveal those ceramic phases were successfully grown onto the substrate. The work temperatures show DLC and AlN films coating had limited the heat transfer by the lower thermal conductivity of these ceramic films. Obviously, it hadn't transferred heat and limited work temperature of HPLED better than DLC thin film only.

Rare Earth Oxide Thin Films

CERN Document Server

Fanciulli, Marco

2007-01-01

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

Thin-film solar cells

International Nuclear Information System (INIS)

Aberle, Armin G.

2009-01-01

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films

Directory of Open Access Journals (Sweden)

José Ernesto Nájera-Carpio

2015-07-01

Full Text Available In this work, the irreversible processes in light heating of Silicon (Si and Germanium (Ge thin films are examined. Each film is exposed to light irradiation with radiative and convective boundary conditions. Heat, electron and hole transport and generation-recombination processes of electron-hole pairs are studied in terms of a phenomenological model obtained from basic principles of irreversible thermodynamics. We present an analysis of the contributions to the entropy production in the stationary state due to the dissipative effects associated with electron and hole transport, generation-recombination of electron-hole pairs as well as heat transport. The most significant contribution to the entropy production comes from the interaction of light with the medium in both Si and Ge. This interaction includes two processes, namely, the generation of electron-hole pairs and the transferring of energy from the absorbed light to the lattice. In Si the following contribution in magnitude comes from the heat transport. In Ge all the remaining contributions to entropy production have nearly the same order of magnitude. The results are compared and explained addressing the differences in the magnitude of the thermodynamic forces, Onsager’s coefficients and transport properties of Si and Ge.

A chemical route to room-temperature synthesis of nanocrystalline TiO2 thin films

International Nuclear Information System (INIS)

Pathan, Habib M.; Kim, Woo Young; Jung, Kwang-Deog; Joo, Oh-Shim

2005-01-01

A lot of methods are developed for the deposition of TiO 2 thin films; however, in each of these methods as-deposited films are amorphous and need further heat treatment at high temperature. In the present article, a chemical bath deposition (CBD) method was used for the preparation of TiO 2 thin films. We investigated nanocrystalline TiO 2 thin films using CBD at room temperature onto glass and ITO coated glass substrate. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM) techniques. The chemically synthesized films were nanocrystalline and composed of crystal grains of 2-3 nm

Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

Science.gov (United States)

Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

1999-09-01

A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

Development of wear resistant zirconium oxide thin films on stainless steel substrates

International Nuclear Information System (INIS)

Then, I.K.; Mujahid, M.; Zhang, B.

2005-01-01

The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 μm in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

Development of wear resistant zirconium oxide thin films on stainless steel substrates

Energy Technology Data Exchange (ETDEWEB)

Then, I.K.; Mujahid, M. [School of Materials Engineering, Nanyang Technological Univ. (Singapore); Zhang, B. [Dou Yee Technologies Pte Ltd, Bedok Industrial Park C (Singapore)

2005-07-01

The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 {mu}m in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

Solar control on irradiated Ta2O2 thin films

International Nuclear Information System (INIS)

Baydogan, N. D.; Zayim, E. Oe.

2007-01-01

Thin films consisting of Ta 2 O 5 have been used in industry in applications related to thin-film capacitors, optical waveguides, and antireflection coatings on solar cells. Ta 2 O 5 films are used for several special applications as highly refractive material and show different optical properties depending on the deposition methods. Sol-gel technique has been used for the preparation of Ta 2 O 5 thin films. Ta 2 O 5 thin films were prepared by sol-gel proses on glass substrates to obtain good quality films. These films were exposed to gamma radiation from Co-60 radioisotope. Ta 2 O 5 coated thin films were placed against the source and irradiated for 8 different gamma doses; between 0.35 and 21.00 kGy at room temperature. Energetic gamma ray can affect the samples and change its colour. On the other hand some of the Ta 2 O 5 coated thin films were irradiated with beta radiation from Sr-90 radioisotope. The effect of gamma irradiation on the solar properties of Ta 2 O 5 films is compared with that of beta irradiation. The solar properties of the irradiated thin films differ significantly from those of the unirradiated ones. After the irradiation of the samples transmittance and reflectance are measured for solar light between 300 and 2100 nm, by using Perkin Elmer Lambda 9 UV/VIS/NIR Spectrophotometer. Change in the direct solar transmittance, reflectance and absorptance with absorbed dose are determined. Using the optical properties, the redistribution of the absorbed component of the solar radiation and the shading coefficient (SC) are calculated as a function of the convective heat-transfer coefficient. Solar parameters are important for the determination of the shading coefficient. When the secondary internal heat transfer factor (qi), direct solar transmittance (□ e ), and solar factor (g) are known, it is possible to determine shading coefficient via the dose rates. The shading coefficient changes as the dose rate is increased. In this study, the shading

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

International Nuclear Information System (INIS)

Rodriguez-Lazcano, Y.; Pena, Yolanda; Nair, M.T.S.; Nair, P.K.

2005-01-01

We report a method for obtaining thin films of polycrystalline antimony selenide via chemical bath deposition followed by heating the thin films at 573 K in selenium vapor. The thin films deposited from chemical baths containing one or more soluble complexes of antimony, and selenosulfate initially did not show X-ray diffraction (XRD) patterns corresponding to crystalline antimony selenide. Composition of the films, studied by energy dispersive X-ray analyses indicated selenium deficiency. Heating these films in presence of selenium vapor at 573 K under nitrogen (2000 mTorr) resulted in an enrichment of Se in the films. XRD peaks of such films matched Sb 2 Se 3 . Evaluation of band gap from optical spectra of such films shows absorption due to indirect transition occurring in the range of 1-1.2 eV. The films are photosensitive, with dark conductivity of about 2 x 10 -8 (Ω cm) -1 and photoconductivity, about 10 -6 (Ω cm) -1 under tungsten halogen lamp illumination with intensity of 700 W m -2 . An estimate for the mobility life time product for the film is 4 x 10 -9 cm 2 V -1

CuInS{sub 2} thin films obtained through the annealing of chemically deposited In{sub 2}S{sub 3}-CuS thin films

Energy Technology Data Exchange (ETDEWEB)

Pena, Y., E-mail: yolapm@gmail.com [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Lugo, S. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Calixto-Rodriguez, M. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco S/N, Col Centro, 62580, Temixco, Morelos (Mexico); Vazquez, A.; Gomez, I.; Elizondo, P. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico)

2011-01-01

In this work, we report the formation of CuInS{sub 2} thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In{sub 2}S{sub 3}) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS{sub 2} (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10{sup -8} to 3 {Omega}{sup -1} cm{sup -1} depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Two-stage crossover from thermal to quantum flux creep of dilute vortex ensembles in various high-T{sub c} superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Akerman, Johan J.; Venturini, E. L.; Siegal, M. P.; Yun, S. H.; Karlsson, U. O.; Rao, K. V.

2001-09-01

The thermal-to-quantum flux creep crossover at low vortex densities has been studied in YBa{sub 2}Cu{sub 3}O{sub 7}, TlBa{sub 2}CaCu{sub 2}O{sub 7-{delta}}, and HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}} thin films using ac susceptibility. The crossover temperatures T{sub cr} are 10--11, 17, and 30 K, respectively. Both thermal and quantum flux creep is suppressed as the vortex density is decreased. We observe a two-stage nature in the crossover behavior which appears to be a general property of all the three materials studied.

Growth and characterization of magnetite-maghemite thin films by the dip coating method

International Nuclear Information System (INIS)

Velásquez, A. A.; Arnedo, A.

2017-01-01

We present the process of growth and characterization of magnetite-maghemite thin films obtained by the dip coating method. The thin films were deposited on glass substrates, using a ferrofluid of nanostructured magnetite-maghemite particles as precursor solution. During the growth of the films the following parameters were controlled: number of dips of the substrates, dip velocity of the substrates and drying times. The films were characterized by Atomic Force Microscopy, Scanning Elelectron Microscopy, four-point method for resistance measurement, Room Temperature Mössbauer Spectroscopy and Hall effect. Mössbauer measurements showed the presence of a sextet attributed to maghemite (γ-Fe_2O_3) and two doublets attributed to superparamagnetic magnetite (Fe_3O_4), indicating a distribution of oxidation states of the iron as well as a particle size distribution of the magnetic phases in the films. Atomic force microscopy measurements showed that the films cover quasi uniformly the substrates, existing in them some pores with sub-micron size. Scanning Electron Microscopy measurements showed a uniform structure in the films, with spherical particles with size around 10 nm. Voltage versus current measurements showed an ohmic response of the films for currents between 0 and 100 nA. On the other hand, Hall effect measurements showed a nonlinear response of the Hall voltage with the magnetic flux density applied perpendicular to the plane of the films, however the response is fairly linear for magnetic flux densities between 0.15 and 0.35 T approximately. The results suggest that the films are promising for application as magnetic flux density sensors.

In situ nanocalorimetry of thin glassy organic films

Science.gov (United States)

León-Gutierrez, E.; Garcia, G.; Lopeandía, A. F.; Fraxedas, J.; Clavaguera-Mora, M. T.; Rodríguez-Viejo, J.

2008-11-01

In this work, we describe the design and first experimental results of a new setup that combines evaporation of liquids in ultrahigh vacuum conditions with in situ high sensitivity thermal characterization of thin films. Organic compounds are deposited from the vapor directly onto a liquid nitrogen cooled substrate, permitting the preparation and characterization of glassy films. The substrate consists of a microfabricated, membrane-based nanocalorimeter that permits in situ measurements of heat capacity under ultrafast heating rates (up to 105 K/s) in the temperature range of 100-300 K. Three glass forming liquids—toluene, methanol, and acetic acid—are characterized. The spikes in heat capacity related to the glass-transition temperature, the fictive temperature and, in some cases, the onset temperature of crystallization are determined for several heating rates.

XPS analysis of the activation process in non-evaporable getter thin films

CERN Document Server

Lozano, M

2000-01-01

The surface activation process of sputter-coated non-evaporable getter (NEG) thin films based on Ti-Zr and Ti-Zr-V alloys has been studied in situ by means of X-ray photoelectron spectroscopy. After exposure of the NEG thin films to ambient air they become reactivated after a thermal treatment in an ultrahigh vacuum. In our case the films are heated up to ~250 degrees C for 2 h in a base pressure of ~10/sup -9/ Torr. (18 refs).

Two-dimensional turning of thermal flux from normal to lateral propagation in thin metal film irradiated by femtosecond laser pulse

Science.gov (United States)

Shepelev, V. V.; Inogamov, N. A.

2018-01-01

There are various geometrical variants of laser illumination and target design. Important direction of investigations is connected with tightly focused action (spot size may be less than micron) onto a thin metal film: thickness of a film is just few skin-layer depths. Duration of a pulse is τ L ˜ 0.1 ps. In these conditions energy absorbed in a skin layer first propagates normally to a surface: gradient ∂Te /∂x dominates, here and below x and y are normal and lateral directions. This process in 1-2 ps homogenizes electron temperature T e along thickness of a film. We consider conditions when a film or is supported by weakly conducting substrate, or is free standing. Therefore all absorbed energy is confined inside the film. At the next stage the internal energy begin to flow along the lateral direction—thus direction of energy expansion is changed from x to y because of the heat non-penetrating boundary condition imposed on the rear-side of the film. At the short two-temperature stage of lateral expansion the thermal conductivity κ is high. After that electron and ion temperatures equilibrates and later on the heat propagates with usual value of κ. Lateral expansion cools down the hot spot on long time scales and finally the molten spot recrystallizes. Two-dimensional approach allows us to consider all these stages from propagation in x direction (normal to a film) to propagation in y direction (along a film).

Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate

Science.gov (United States)

Usop, R.; Hamed, N. K. A.; Megat Hasnan, M. M. I.; Ikeda, H.; Sabri, M. F. M.; Ahmad, M. K.; Said, S. M.; Salleh, F.

2018-04-01

In order to fabricate a thermoelectric device on glass substrate for harvesting waste heat energy through house appliances, the Seebeck coefficient of translucent TiO2 thin film was investigated. The TiO2 thin film was synthesized by using hydrothermal method with F-SnO2 coated glass as substrate. From scanning electron microscopy analysis, the synthesized TiO2 thin film was found to be in nanometer-scale rod structure with a thickness of 4 µm. The Seebeck coefficient was measured in the temperature range of 300 – 400 K. The Seebeck coefficient is found to be in negative value which shows that synthesized film is an n-type semiconductor material, and is lower than the value of bulk-size material. This reduction in Seebeck coefficient of TiO2 thin film is likely due to the low dimensional effect and the difference of carrier concentration.

Alloying process of sputter-deposited Ti/Ni multilayer thin films

International Nuclear Information System (INIS)

Cho, H.; Kim, H.Y.; Miyazaki, S.

2006-01-01

Alloying process of a Ti/Ni multilayer thin film was investigated in detail by differential scanning calorimetry (DSC), X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The Ti/Ni multilayer thin film was prepared by depositing Ti and Ni layers alternately on a SiO 2 /Si substrate. The number of each metal layer was 100, and the total thickness was 3 μm. The alloy composition was determined as Ti-51 at.%Ni by electron probe micro analysis (EPMA). The DSC curve exhibited three exothermic peaks at 621, 680 and 701 K during heating the as-sputtered multilayer thin film. In order to investigate the alloying process, XRD and TEM observation was carried out for the specimens heated up to various temperatures with the heating rate same as the DSC measurement. The XRD profile of the as-sputtered film revealed only diffraction peaks of Ti and Ni. But reaction layers of 3 nm in thickness were observed at the interfaces of Ti and Ni layers in cross-sectional TEM images. The reaction layer was confirmed as an amorphous phase by the nano beam diffraction analysis. The XRD profiles exhibited that the intensity of Ti diffraction peak decreased in the specimen heat-treated above 600 K. The peak from Ni became broad and shifted to lower diffraction angle. The amorphous layer thickened up to 6 nm in the specimen heated up to 640 K. The diffraction peak corresponding to Ti-Ni B2 phase appeared and the peak from Ni disappeared for the specimen heated up to 675 K. The Ti-Ni B2 crystallized from the amorphous reaction layer. After further heating above the third exothermic peak, the intensity of the peak from the Ti-Ni B2 phase increased, the peak from Ti disappeared and the peaks corresponding to Ti 2 Ni appeared. The Ti 2 Ni phase was formed by the reaction of the Ti-Ni B2 and Ti

Simulation of Silver Thin Films' Growth and Influence of Deposition Rate on Final Grain Size under Angle Flux and Standard Situation

Directory of Open Access Journals (Sweden)

Maryam Jamshidnejad

2011-01-01

Full Text Available In this paper, a 2D stimulation model, FACET, is used for investigation of the relation between micro structure and deposition conditions such as substrate temperature, deposition rate and deposition angle of Ag thin films. It is observed that by increasing the deposition rate in standard conditions providing that the temperature of substrate is low, the average of final grain size is decreased. While, in deposition with angle flux the average of final grain size is increased.

Half-Space Temperature Field with a Movable Thermally Thin-Coated Boundary Under External Heat Flux

Directory of Open Access Journals (Sweden)

P. A. Vlasov

2014-01-01

Full Text Available In engineering practice analytical methods of the mathematical theory of heat conduction hold a special place. This is due to many reasons, in particular, because of the fact that the solutions of the relevant problems represented in analytically closed form, can be used not only for a parametric analysis of the studied temperature field and to explore the specific features of its formation, but also to test the developed computational algorithms, which are aimed at solving real-world application heat and mass transfer problems. Difficulties arising when using the analytical mathematical theory methods of heat conduction in practice are well known. Also they are significantly exacerbated if the boundaries of the system under study are movable, even in the simplest case, when the law of motion is known.The main goal of the conducted research is to have an analytically closed-form problem solution for finding the orthotropic half-space temperature field, a boundary of which has thermally thin coating exposed to extremely concentrated stationary external heat flux and uniformly moves parallel to itself.The assumption that the covering of the boundary is thermally thin, allowed to realize the idea of \\concentrated capacity", that is to accept the hypothesis that the mean-thickness coating temperature is equal to the temperature of its boundaries. This assumption allowed us to reduce the problem under consideration to a mixed problem for a parabolic equation with a specific boundary condition.The Hankel integral transform of zero order with respect to the radial variable and the Laplace transform with respect to the temporal variable were used to solve the reduced problem. These techniques have allowed us to submit the required solution as an iterated integral.

Fast neutron induced flux pinning in Tl-based high-Tc single crystals and thin films, highly textured tapes and melt-textured bulk 123-superconductors

International Nuclear Information System (INIS)

Brandstaetter, G.; Samadi Hosseinalli, G.; Kern, C.; Sauerzopf, F.M.; Schulz, G.W.; Straif, W.; Yang, X.; Weber, H.W.; Hu, Q.Y.

1999-01-01

Various compounds (TI-2223, TI-1223, TI-2212) as well as material forms (single crystals, thin films, ceramics, tapes) of TI-based high temperature superconductors were investigated by magnetic and transport techniques. TI-2223 has a very 'low lying' irreversibility line (H parallel e) and negligible critical current densities J c at 77 K. However, the irreversibility line shifts to higher fields and temperatures and J c is strongly enhanced, even at 77 K, after fast neutron irradiation. In contrast, the related TI-1223 compound has a much steeper irreversibility line (H parallel c) similar to that of Y-123. J c is significant up to 77 K, even in the unirradiated state, and can be largely improved by neutron irradiation. Transport measurements made on TI-1223 tapes still show much lower critical current densities. TI-2212 and Tl-2223 thin films have J c 's at 77 K, which are comparable to those of TI-1223 single crystals. Transport measurements on highly textured Bi-2223 tapes as well as flux profile measurements on Nd-123 bulk superconductors confirm the beneficial effects of neutron induced defects (collision cascades) for flux pinning. (author)

The effects of heat treatment on optical, structural, electrochromic and bonding properties of Nb{sub 2}O{sub 5} thin films

Energy Technology Data Exchange (ETDEWEB)

Coşkun, Özlem Duyar, E-mail: duyar@hacettepe.edu.tr [Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, Ankara (Turkey); Demirel, Selen, E-mail: nymph24@gmail.com [Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, Ankara (Turkey); Hacettepe University, Nanotechnology and Nanomedicine Department, Ankara (Turkey); Atak, Gamze, E-mail: gbaser@hacettepe.edu.tr [Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, Ankara (Turkey)

2015-11-05

Nb{sub 2}O{sub 5} thin films were deposited onto heated glass substrates by RF magnetron sputtering using a Nb{sub 2}O{sub 5} target. The films were annealed in air at temperatures between 400 and 700 °C for 6 h. Effects of the crystalline structure on optical, structural, electrochromic and bonding properties of the Nb{sub 2}O{sub 5} thin films were investigated by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, optical spectrophotometry and electrochemical measurements. The film refractive index varied between 2.09 and 2.22 at the wavelength of 550 nm depending on the annealing temperature. The decrease of the optical band gap revealed for the films with increasing annealing temperature is attributed to oxygen-ion vacancies in the film structure. The orthorhombic structure of Nb{sub 2}O{sub 5} films resulted in good electrochromic properties with high colouration efficiencies of 19.56 cm{sup 2}/C and 53.24 cm{sup 2}/C at 550 nm and 1000 nm, respectively. The optical, structural and electrochromic properties of the different crystalline polymorphic forms of the Nb{sub 2}O{sub 5} films make them attractive for optical applications. - Highlights: • Stoichiometric Nb{sub 2}O{sub 5} films prepared using RF magnetron sputtering technique. • The different crystalline forms of Nb{sub 2}O{sub 5} thin films obtained by annealing. • The optical, structural and electrochromic properties of the films were investigated. • The optical band gap decreased with increasing annealing temperature. • The orthorhombic T-Nb{sub 2}O{sub 5} films exhibited a higher colouration efficiency.

Thin Film Flat Panel Off-Axis Solar Concentrator with Flux Distribution, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Relatively small concentric thin film FRESNEL lenses and fresnel-like Multiple Parabolic Reflecting Surface (MPRS) reflectors have been successfully produced from...

Optical approach to thermopower and conductivity measurements in thin-film semiconductors

International Nuclear Information System (INIS)

Dersch, H.; Amer, N.M.

1984-01-01

An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

Thermal decomposition of titanium deuteride thin films

International Nuclear Information System (INIS)

Malinowski, M.E.

1983-01-01

The thermal desorption spectra of deuterium from essentially clean titanium deuteride thin films were measured by ramp heating the films in vacuum; the film thicknesses ranged from 20 to 220 nm and the ramp rates varied from 0.5 to about 3 0 C s - 1 . Each desorption spectrum consisted of a low nearly constant rate at low temperatures followed by a highly peaked rate at higher temperatures. The cleanliness and thinness of the films permitted a description of desorption rates in terms of a simple phenomenological model based on detailed balancing in which the low temperature pressure-composition characteristics of the two-phase (α-(α+#betta#)-#betta#) region of the Ti-D system were used as input data. At temperatures below 340 0 C the model predictions were in excellent agreement with the experimentally measured desorption spectra. Interpretations of the spectra in terms of 'decomposition trajectories'' are possible using this model, and this approach is also used to explain deviations of the spectra from the model at temperatures of 340 0 C and above. (Auth.)

Crystal structure and phase composition of aluminium thin films with holmium additions

International Nuclear Information System (INIS)

Koleshko, V.M.; Belitskij, V.F.; Obukhov, V.E.; Rumak, N.V.; Urban, T.P.

1984-01-01

The effect of holmium additions on the crystal structure and phase composition of thin aluminium films has been studied. A regularity in grain size changes in aluminium thin films versus the holmium content in them is established. The holmium introduction is shown to result in the appearance of axial texture in the aluminium films, the texture axis being determined by the quantity of the addition. During heat treatment of the aluminium films, containing holmium additions, in the range of low ( approximately 100-200 deg C) annealing temperatures holmium monohydroxide is formed, and at annealing temperatures 300 deg C 0 3 is formed

DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

International Nuclear Information System (INIS)

Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

2007-01-01

An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

Boiling transition and the possibility of spontaneous nucleation under high subcooling and high mass flux density flow in a tube

International Nuclear Information System (INIS)

Fukuyama, Y.; Kuriyama, T.; Hirata, M.

1986-01-01

Boiling transition and inverted annular heat transfer for R-113 have been investigated experimentally in a horizontal tube of 1.2 X 10/sup -3/ meter inner diameter with heating length over inner diameter ratio of 50. Experiments cover a high mass flux density range, a high local subcooling range and a wide local pressure range. Heat transfer characteristics were obtained by using heat flux control steady-state apparatus. Film boiling treated here is limited to the case of inverted annular heat transfer with very thin vapor film, on the order of 10/sup -6/ meter. Moreover, film boiling region is always limited to a certain downstream part, since the system has a pressure gradient along the flow direction. Discussions are presented on the parametric trends of boiling heat transfer characteristic curves and characteristic points. The possible existence is suggested of a spontaneous nucleation control surface boiling phenomena. And boiling transition heat flux and inverted annular heat transfer were correlated

Process for forming epitaxial perovskite thin film layers using halide precursors

Science.gov (United States)

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Development of Pre-Industrial Processes for the Preparation of Thin Film Coatings for Energy Applications; Desarrollo de Procesos Pre-Industriales para la Preparacion de Recubrimientos en Pelicula Delgada para Aplicaciones Energeticas

Energy Technology Data Exchange (ETDEWEB)

Sanz, C.; Guillen, C.; Gutierrez, M.T.

2005-07-01

Indium sulfide (In2S3) is an interesting candidate as buffer layer in heterojunction solar cells based on a Cu(In,Ga)Se2 absorbent layer. Modulated Flux Deposition (MFD) is a physical evaporation-type synthesis technique, specific for thin film synthesis, in which the substrate is exposed to the deposition of each element and heating in a sequential and cyclic way. This vacuum process allows a fine adjustment of the elemental vapor fluxes. In2S3 polycrystalline thin films were deposited on glass substrates by MFD. The influence of different deposition parameters (substrate temperature, both evaporation source temperatures, substrate angular velocity) on the composition, structure and optical properties were studied. All the obtained samples consisted in tetragonal Beta-In2S3 with high or total (103) preferential orientation. Quite thin layers (50-100 nm thick) have been achieved, with smoothed small grained microstructures. Respect to the sulfur supply, its reduction improved the crystallinity and decreased very slightly the bandgap energy. As conclusion, thin films with morphological and optical properties adequate to the mentioned application were archived decreasing the substrate temperature up to 310 C. (Author) 42 refs.

Thin-film antifuses for pellistor type gas sensors

NARCIS (Netherlands)

Kovalgin, Alexeij Y.; Holleman, J.; van den Berg, Albert; Wallinga, Hans

2001-01-01

This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature,

Thin films and nanomaterials

International Nuclear Information System (INIS)

Jayakumar, S.; Kannan, M.D.; Prasanna, S.

2012-01-01

The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors

Science.gov (United States)

Fan, Ching-Lin; Shang, Ming-Chi; Hsia, Mao-Yuan; Wang, Shea-Jue; Huang, Bohr-Ran; Lee, Win-Der

2016-03-01

A Microwave-Induction Heating (MIH) scheme is proposed for the poly(4-vinylphenol) (PVP) gate insulator cross-linking process to replace the traditional oven heating cross-linking process. The cross-linking time is significantly decreased from 1 h to 5 min by heating the metal below the PVP layer using microwave irradiation. The necessary microwave power was substantially reduced to about 50 W by decreasing the chamber pressure. The MIH scheme is a good candidate to replace traditional thermal heating for cross-linking of PVP as the gate insulator for organic thin-film-transistors.

Growth and characterization of magnetite-maghemite thin films by the dip coating method

Energy Technology Data Exchange (ETDEWEB)

Velásquez, A. A., E-mail: avelas26@eafit.edu.edu.co; Arnedo, A. [Universidad EAFIT, Grupo de Electromagnetismo Aplicado (Colombia)

2017-11-15

We present the process of growth and characterization of magnetite-maghemite thin films obtained by the dip coating method. The thin films were deposited on glass substrates, using a ferrofluid of nanostructured magnetite-maghemite particles as precursor solution. During the growth of the films the following parameters were controlled: number of dips of the substrates, dip velocity of the substrates and drying times. The films were characterized by Atomic Force Microscopy, Scanning Elelectron Microscopy, four-point method for resistance measurement, Room Temperature Mössbauer Spectroscopy and Hall effect. Mössbauer measurements showed the presence of a sextet attributed to maghemite (γ-Fe{sub 2}O{sub 3}) and two doublets attributed to superparamagnetic magnetite (Fe{sub 3}O{sub 4}), indicating a distribution of oxidation states of the iron as well as a particle size distribution of the magnetic phases in the films. Atomic force microscopy measurements showed that the films cover quasi uniformly the substrates, existing in them some pores with sub-micron size. Scanning Electron Microscopy measurements showed a uniform structure in the films, with spherical particles with size around 10 nm. Voltage versus current measurements showed an ohmic response of the films for currents between 0 and 100 nA. On the other hand, Hall effect measurements showed a nonlinear response of the Hall voltage with the magnetic flux density applied perpendicular to the plane of the films, however the response is fairly linear for magnetic flux densities between 0.15 and 0.35 T approximately. The results suggest that the films are promising for application as magnetic flux density sensors.

Performance of an Advanced Stirling Convertor Based on Heat Flux Sensor Measurements

Science.gov (United States)

Wilson, Dcott D.

2012-01-01

The U.S. Department of Energy (DOE) and Lockheed Martin Space Systems Company (LMSSC) have been developing the Advanced Stirling Radioisotope Generator (ASRG) for use as a power system for space science missions. This generator would use two highefficiency Advanced Stirling Convertors (ASCs), developed by Sunpower, Inc., and NASA Glenn Research Center. The ASCs convert thermal energy from a radioisotope heat source into electricity. As part of ground testing of these ASCs, different operating conditions are used to simulate expected mission conditions. These conditions require achieving a particular operating frequency, hot-end and cold-end temperatures, and specified electrical power output for a given heat input. It is difficult to measure heat input to Stirling convertors due to the complex geometries of the hot components, temperature limits of sensor materials, and invasive integration of sensors. A thin-film heat flux sensor was used to directly measure heat input to an ASC. The effort succeeded in designing and fabricating unique sensors, which were integrated into a Stirling convertor ground test and exposed to test temperatures exceeding 700 C in air for 10,000 hr. Sensor measurements were used to calculate thermal efficiency for ASC-E (Engineering Unit) #1 and #4. The post-disassembly condition of the sensors is also discussed.

Modeling flux pinning in thin undoped and BazRo3-doped YBCO films

DEFF Research Database (Denmark)

Paturi, P.; Irjala, M.; Huhtinen, H.

2009-01-01

A simple model based on distributions of twin boundaries, dislocations, and BaZrO3 nanorods is presented to describe the Jc properties of undoped and BaZrO3 (BZO)-doped YBa2Cu3Ox thin films. The model accurately describes the shape of Jc(B,T) curves of the films, when the pinning site distributions...... are taken from distributions of twin spacings and BZO nanorods from transmission electron microscope images. Thus, assuming that the model can be used for prediction of the Jc properties, we conclude that for enhancement of undoped films more crystalline defects are needed and for doped films a dopant...

Conductance Thin Film Model of Flexible Organic Thin Film Device using COMSOL Multiphysics

Science.gov (United States)

Carradero-Santiago, Carolyn; Vedrine-Pauléus, Josee

We developed a virtual model to analyze the electrical conductivity of multilayered thin films placed above a graphene conducting and flexible polyethylene terephthalate (PET) substrate. The organic layers of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a hole conducting layer, poly(3-hexylthiophene-2,5-diyl) (P3HT), as a p-type, phenyl-C61-butyric acid methyl ester (PCBM) and as n-type, with aluminum as a top conductor. COMSOL Multiphysics was the software we used to develop the virtual model to analyze potential variations and conductivity through the thin-film layers. COMSOL Multiphysics software allows simulation and modeling of physical phenomena represented by differential equations such as heat transfer, fluid flow, electromagnetism, and structural mechanics. In this work, using the AC/DC, electric currents module we defined the geometry of the model and properties for each of the six layers: PET/graphene/PEDOT:PSS/P3HT/PCBM/aluminum. We analyzed the model with varying thicknesses of graphene and active layers (P3HT/PCBM). This simulation allowed us to analyze the electrical conductivity, and visualize the model with varying voltage potential, or bias across the plates, useful for applications in solar cell devices.

Thermogravimetric analysis of fuel film evaporation

Institute of Scientific and Technical Information of China (English)

HU Zongjie; LI Liguang; YU Shui

2006-01-01

Thermogravimetric analysis (TGA) was compared with the petrochemical distillation measurement method to better understand the characteristics of fuel film evaporation at different wall tem- peratures. The film evaporation characteristics of 90# gasoline, 93# gasoline and 0# diesel with different initial thicknesses were investigated at different environmental fluxes and heating rates. The influences of heating rate, film thickness and environmental flux on fuel film evaporation for these fuels were found. The results showed that the environmental conditions in TGA were similar to those for fuel films in the internal combustion engines, so data from TGA were suitable for the analysis of fuel film evaporation. TGA could simulate the key influencing factors for fuel film evaporation and could investigate the basic quantificational effect of heating rate and film thickness. To get a rapid and sufficient fuel film evaporation, sufficiently high wall temperature is necessary. Evaporation time decreases at a high heating rate and thin film thickness, and intense gas flow is important to promoting fuel film evaporation. Data from TGA at a heating rate of 100℃/min are fit to analyze the diesel film evaporation during cold-start and warming-up. Due to the tense molecular interactions, the evaporation sequence could not be strictly divided according to the boiling points of each component for multicomponent dissolved mixture during the quick evaporation process, and the heavier components could vaporize before reaching their boiling points. The 0# diesel film would fully evaporate when the wall temperature is beyond 250℃.

Application of electron accelerator for thin film in Indonesia

International Nuclear Information System (INIS)

Danu, Sugiarto; Darsono, Dadang

2004-01-01

Electron accelerator is widely used for the crosslinking of wire and cable insulation, the treatment of heat shrinkable products, precuring of tire components, and the sterilization of medical products. Research and development the use of electron accelerator for thin film in Indonesia covered radiation curing of surface coating, crosslinking of poly (butylenes succinate), crosslinking of wire, cable and heat shrinkable, sterilization of wound dressing, and prevulcanization of tire. In general, comparing with conventional method, electron beam processing have some advantages, such as, less energy consumption, much higher production rate, processing ability at ambient temperature and environmental friendly. Indonesia has a great potential to develop the application of electron accelerator, due to the remarkable growth industrial sector, the abundant of natural resources and the increasing demand of the high quality products. This paper describes the activities concerning with R and D, and application of electron accelerator for processing of thin film. (author)

Fabrication of cerium-doped yttrium aluminum garnet thin films by a mist CVD method

Energy Technology Data Exchange (ETDEWEB)

Murai, Shunsuke, E-mail: murai@dipole7.kuic.kyoto-u.ac.jp; Sato, Takafumi; Yao, Situ; Kamakura, Ryosuke; Fujita, Koji; Tanaka, Katsuhisa

2016-02-15

We synthesized thin films, consisting of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce), using the mist chemical vapor deposition (CVD) method, which allows the fabrication of high-quality thin films under atmospheric conditions without the use of vacuum equipment. Under a deposition rate of approximately 1 μm/h, the obtained thin films had a typical thickness of 2 μm. The XRD analysis indicated that the thin films consisted of single-phase YAG:Ce. The Rutherford backscattering confirmed the stoichiometry; the composition of the film was determined to be (Y, Ce){sub 3}Al{sub 5}O{sub 12}, with a Ce content of Ce/(Y+Ce)=2.5%. The YAG:Ce thin films exhibited fluorescence due to the 5d–4f electronic transitions characteristic of the Ce ions occupying the eight-coordinated dodecahedral sites in the YAG lattice. - Highlights: • We have synthesized thin films of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce) by using a mist chemical vapor deposition (CVD) method for the first time. • The thickness of the single-phase and stoichiometric thin film obtained by 2 h deposition and following heat treatments is 2 μm. • The thin film is porous but optically transparent, and shows yellow fluorescence upon irradiation with a blue light. • Mist-CVD is a green and sustainable technique that allows fabrication of high-quality thin films at atmospheric conditions without vacuum equipment.

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

Science.gov (United States)

Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

2012-01-05

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

Electrical contacts on polyimide substrates for flexible thin film photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Guillen, C.; Herrero, J

2003-05-01

Both frontal and back electrical contacts have been developed onto polyimide sheets (Kapton KJ[reg]) as alternative substrates to the conventional glasses, for application in lightweight and flexible thin film photovoltaic devices. Transparent and conductive indium tin oxide (ITO) thin films have been deposited by r.f.-magnetron sputtering as the frontal electrical contact. On the other hand, Mo, Cr and Ni layers have been prepared by e-gun evaporation for the back electrical connections. ITO films deposited onto polyimide have shown similar optical transmittance and higher electrical conductivity than onto glass substrates. The transmittance decreases and the conductivity increases after heating at 400 sign C in vacuum atmosphere. Mo, Cr and Ni layers deposited onto polyimide showed similar structure and electrical conductivity than onto conventional glasses. The properties of Mo and Cr layers remained unchanged after heating at 400 sign C in selenium atmosphere.

Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Haenel, T.; Lee, K.Y.; Rau, B.; Ruske, F.; Weber, T.; Gall, S.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie (formerly Hahn-Meitner-Institut Berlin), Kekulestr. 5, D-12489 Berlin (Germany); Berginski, M.; Huepkes, J. [Institute of Photovoltaics, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)

2009-06-15

The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 {omega} after 22 h annealing at 600 C and only slightly increases for a 200 s heat treatment at 900 C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 C. (author)

Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

Quantized dissipation and random telegraph voltage noise in epitaxial BiSrCaCuO thin films

International Nuclear Information System (INIS)

Jung, G.; Savo, B.; Vecchione, A.

1993-01-01

In this paper we report on the observation of correlated multiple-voltage RTN switching in high quality epitaxial BiSrCaCuO thin film. We ascribe the correlated noise to the quantization of flux flow dissipation in the film. (orig.)

Thin-film magneto-impedance structures with very large sensitivity

Energy Technology Data Exchange (ETDEWEB)

García-Arribas, A., E-mail: alf@we.lc.ehu.es [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), Leioa (Spain); BCMaterials, Universidad del País Vasco (UPV/EHU), Leioa (Spain); Fernández, E. [BCMaterials, Universidad del País Vasco (UPV/EHU), Leioa (Spain); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (United States); Svalov, A. [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), Leioa (Spain); Kurlyandskaya, G.V.; Barandiaran, J.M. [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), Leioa (Spain); BCMaterials, Universidad del País Vasco (UPV/EHU), Leioa (Spain)

2016-02-15

Thin film-based Magneto-Impedance (MI) structures are well suited for developing highly sensitive magnetic microsensors, which can be directly integrated into microelectronic circuits. Permalloy (Py) based structures benefit from well-established preparation procedures and enhanced structural stability over amorphous based sensors. In this work we use Finite Element Method calculations to complement our previous studies on high permeability Py multilayers, in order to determine the combination of magnetic and non-magnetic layers that maximizes the MI performance in sandwiched structures. The results indicate that optimum behavior is expected when the thickness of the non-magnetic layer equals the magnetic ones. The study is performed with an open flux configuration (Py not enclosing the central non-magnetic conductor), which permits the fabrication of the complete stack of layers in a single deposition process. On the outcome of that analysis, samples with a sandwiched multilayer structure defined as [Py(100 nm)/Ti(6 nm)]{sub 4}/Cu(400 nm)/[Ti(6 nm)/Py(100 nm)]{sub 4} have been prepared by magnetron sputtering and photolithography, having different dimensions. They were magnetically characterized by magneto-optical Kerr effect, displaying a well-defined transversal anisotropy, and the MI was measured in a network analyzer using a microstrip test-fixture. The measured MI ratio, defined as (Z-Zmin)/Zmin×100, reaches extraordinary values of 350%, while the sensitivity, calculated as the field derivative of the MI ratio, goes up to 300%/Oe (27 kΩ/T in absolute units). The MI ratio is lower than the best reported previously for amorphous CoSiB/Ag/CoSiB thin-film samples with closed-flux structure, but the sensitivity, which is the key parameter for the performance of sensors, is six times larger. These figures can be compared favorably with the ones obtained in wire-based samples, and definitely opens the way to incorporate thin-film structures in low-field MI

Chemically-induced solid-state dewetting of thin Au films

International Nuclear Information System (INIS)

Gazit, Nimrod; Klinger, Leonid; Rabkin, Eugen

2017-01-01

We employed the solid state dewetting technique to produce nanoparticles of silver-gold alloy on a sapphire substrate. We deposited a thin gold layer on the substrate with alloy nanoparticles, and studied its thermal stability at low homological temperatures. We demonstrated that a large number of densely spaced holes form at the initial stages of dewetting of the gold layer with nanoparticles. A similar homogeneous gold film deposited on a bare sapphire substrate remained stable under identical annealing conditions, exhibiting the onset of dewetting at higher temperatures, and with a lower number of holes. We attributed the decreased thermal stability of the gold film deposited on the substrate with the silver-gold nanoparticles to accelerated grooving at the grain boundaries and triple junctions in the film. The grooving process is accelerated by the diffusion fluxes of Au atoms driven from the film towards the nanoparticles by the gradient of chemical potential. We developed a quantitative model of this chemically-induced dewetting process, and discussed its applicability for the design of better catalytic systems. Our work demonstrates that the chemical driving forces have to be reckoned with in the analysis of thermal stability of multicomponent thin films.

The α-particle excited scintillation response of YAG:Ce thin films grown by liquid phase epitaxy

International Nuclear Information System (INIS)

Prusa, Petr; Nikl, Martin; Mares, Jiri A.; Nitsch, Karel; Beitlerova, Alena; Kucera, Miroslav

2009-01-01

Y 3 Al 5 O 12 :Ce (YAG:Ce) thin films were grown from PbO-,BaO-, and MoO 3 -based fluxes using the liquid phase epitaxy (LPE) method. Photoelectron yield, its time dependence within 0.5-10 μs shaping time, and energy resolution of these samples were measured under α-particle excitation. For comparison a sample of the Czochralski grown bulk YAG:Ce single crystal was measured as well. Photoelectron yield values of samples grown from the BaO-based flux were found superior to other LPE films and comparable with that of the bulk single crystal. The same is valid also for the time dependence of photoelectron yield. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, α particle energy deposition in very thin films is modelled and discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Biomimetic thin film synthesis

Energy Technology Data Exchange (ETDEWEB)

Graff, G.L.; Campbell, A.A.; Gordon, N.R.

1995-05-01

The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

Effects of the substrate temperature on the properties of CuIn5S8 thin films

International Nuclear Information System (INIS)

Gannouni, M.; Kanzari, M.

2011-01-01

Structural, optical and electrical properties of CuIn 5 S 8 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn 5 S 8 thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10 5 cm -1 at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn 5 S 8 thin film is an n-type semiconductor at 250 deg. C.

Degradation of zinc oxide thin films in aqueous environment. Pt. II. Coated films

Energy Technology Data Exchange (ETDEWEB)

Rosa, L. de; Mitton, D.B.; Monetta, T.; Bellucci, F. [Naples Univ. (Italy). Dept. of Materials and Production Engineering; Springer, J. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

2001-12-01

cn Part I of this research, the degradation mechanism of two different bare ZnO thin films was assessed. Degradation of the electrical properties of ZnO as well as changes in morphology were observed for both films. In the current paper, the degradation of zinc oxide thin films coated with protective acrylic paint is addressed during exposure to (i) an aqueous 3.5% NaCl solution at 85 C and (ii) a standard damp heat test at 85% R.H. and 85 C. Electrical and electrochemical techniques were employed to monitor zinc oxide degradation during exposure to the test environments. Electrochemical Impedance Spectroscopy was employed to investigate the delamination phenomena at the ZnO/coating interface and a simple equivalent circuit was developed to quantitatively measure the delamination ratio. The effect of different silane based adhesion promoters (glycidil-oxypropyl-trimethoxy-silane and aminopropyl-trimethoxy-silane) was also investigated. (orig.)

Development of Ultrafast Laser Flash Methods for Measuring Thermophysical Properties of Thin Films and Boundary Thermal Resistances

Science.gov (United States)

Baba, Tetsuya; Taketoshi, Naoyuki; Yagi, Takashi

2011-11-01

Reliable thermophysical property values of thin films are important to develop advanced industrial technologies such as highly integrated electronic devices, phase-change memories, magneto-optical disks, light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), semiconductor lasers (LDs), flat-panel displays, and power electronic devices. In order to meet these requirements, the National Metrology Institute of Japan of the National Institute of Advanced Industrial Science and Technology (NMIJ/AIST) has developed ultrafast laser flash methods heated by picosecond pulse or nanosecond pulse with the same geometrical configuration as the laser flash method, which is the standard method to measure the thermal diffusivity of bulk materials. Since these pulsed light heating methods induce one-dimensional heat diffusion across a well-defined length of the specimen thickness, the absolute value of thermal diffusivity across thin films can be measured reliably. Using these ultrafast laser flash methods, the thermal diffusivity of each layer of multilayered thin films and the boundary thermal resistance between the layers can be determined from the observed transient temperature curves based on the response function method. The thermophysical properties of various thin films important for modern industries such as the transparent conductive films used for flat-panel displays, hard coating films, and multilayered films of next-generation phase-change optical disks have been measured by these methods.

Effect of oxygen on the surface morphology of CuGaS{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Smaili, F., E-mail: fethi.smaili@voila.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2009-08-01

Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS{sub 2} thin films by two different types. In this study, CuGaS{sub 2} thin films were deposited by vacuum thermal evaporation of CuGaS{sub 2} powder on heated glass substrates at 200 deg. C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 deg. C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS{sub 2} material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS{sub 2} thin films. It was found that annealing of CuGaS{sub 2} film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.

Demonstration of thin film pair distribution function analysis (tfPDF for the study of local structure in amorphous and crystalline thin films

Directory of Open Access Journals (Sweden)

Kirsten M. Ø. Jensen

2015-09-01

Full Text Available By means of normal-incidence, high-flux and high-energy X-rays, total scattering data for pair distribution function (PDF analysis have been obtained from thin films (tf, suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. The `tfPDF' method is illustrated through studies of as-deposited (i.e. amorphous and crystalline FeSb3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb6 octahedra with motifs highly resembling the local structure in crystalline FeSb3. Analysis of the amorphous structure allows the prediction of whether the final crystalline product will form the FeSb3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films.

Thermal expansion coefficient and thermomechanical properties of SiN(x) thin films prepared by plasma-enhanced chemical vapor deposition.

Science.gov (United States)

Tien, Chuen-Lin; Lin, Tsai-Wei

2012-10-20

We present a new method based on fast Fourier transform (FFT) for evaluating the thermal expansion coefficient and thermomechanical properties of thin films. The silicon nitride thin films deposited on Corning glass and Si wafers were prepared by plasma-enhanced chemical vapor deposition in this study. The anisotropic residual stress and thermomechanical properties of silicon nitride thin films were studied. Residual stresses in thin films were measured by a modified Michelson interferometer associated with the FFT method under different heating temperatures. We found that the average residual-stress value increases when the temperature increases from room temperature to 100°C. Increased substrate temperature causes the residual stress in SiN(x) film deposited on Si wafers to be more compressive, but the residual stress in SiN(x) film on Corning glass becomes more tensile. The residual-stress versus substrate-temperature relation is a linear correlation after heating. A double substrate technique is used to determine the thermal expansion coefficients of the thin films. The experimental results show that the thermal expansion coefficient of the silicon nitride thin films is 3.27×10(-6)°C(-1). The biaxial modulus is 1125 GPa for SiN(x) film.

Origin of room temperature ferromagnetic moment in Rh-rich [Rh/Fe] multilayer thin films

International Nuclear Information System (INIS)

Kande, Dhishan; Laughlin, David; Zhu Jiangang

2010-01-01

B2 ordered FeRh thin films switch from antiferromagnetic (AFM) to ferromagnetic (FM) state on heating above 350 K and switch back on cooling, with a hysteresis. This property makes FeRh a very attractive choice as a write-assist layer material for low temperature heat assisted magnetic recording (HAMR) media. Studies have shown that as we decrease the thickness of the FeRh films, the B2 phase is no longer AFM even below 350 K and there is a thickness dependant FM stabilization of the B2 phase. It was also proved that slightly Rh-richer compositions (>50 at. % Rh) were more preferable to stabilize the AFM phase. The current study focuses on growing highly ordered FeRh films by alternate layer rf sputtering of thin layers of iron and rhodium onto a heated substrate. It has been shown that films with rhodium content beyond 55 at. % contain a disordered bcc FM phase which gives rise to residual moment at room temperature even for thicker films.

Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov (United States)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

Poly(4-vinylphenol gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2016-03-01

Full Text Available A Microwave-Induction Heating (MIH scheme is proposed for the poly(4-vinylphenol (PVP gate insulator cross-linking process to replace the traditional oven heating cross-linking process. The cross-linking time is significantly decreased from 1 h to 5 min by heating the metal below the PVP layer using microwave irradiation. The necessary microwave power was substantially reduced to about 50 W by decreasing the chamber pressure. The MIH scheme is a good candidate to replace traditional thermal heating for cross-linking of PVP as the gate insulator for organic thin-film-transistors.

Thin Film & Deposition Systems (Windows)

Data.gov (United States)

Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

Advanced platform for the in-plane ZT measurement of thin films

Science.gov (United States)

Linseis, V.; Völklein, F.; Reith, H.; Nielsch, K.; Woias, P.

2018-01-01

The characterization of nanostructured samples with at least one restricted dimension like thin films or nanowires is challenging, but important to understand their structure and transport mechanism, and to improve current industrial products and production processes. We report on the 2nd generation of a measurement chip, which allows for a simplified sample preparation process, and the measurement of samples deposited from the liquid phase using techniques like spin coating and drop casting. The new design enables us to apply much higher temperature gradients for the Seebeck coefficient measurement in a shorter time, without influencing the sample holder's temperature distribution. Furthermore, a two membrane correction method for the 3ω thermal conductivity measurement will be presented, which takes the heat loss due to radiation into account and increases the accuracy of the measurement results significantly. Errors caused by different sample compositions, varying sample geometries, and different heat profiles are avoided with the presented measurement method. As a showcase study displaying the validity and accuracy of our platform, we present temperature-dependent measurements of the thermoelectric properties of an 84 nm Bi87Sb13 thin film and a 15 μm PEDOT:PSS thin film.

Low-density silicon thin films for lithium-ion battery anodes

Energy Technology Data Exchange (ETDEWEB)

Demirkan, M.T., E-mail: tmdemirkan@ualr.edu [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Department of Materials Science and Engineering, Gebze Technical University, Kocaeli (Turkey); Trahey, L. [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Karabacak, T. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

2016-02-01

Density of sputter deposited silicon (Si) thin films was changed by a simple working gas pressure control process, and its effects on the cycling performance of Si films in Li-ion batteries as anodes was investigated. Higher gas pressure results in reduced film densities due to a shadowing effect originating from lower mean free path of sputter atoms, which leads to a wider angular distribution of the incoming flux and formation of a porous film microstructure. Si thin film anodes of different densities ranging from 2.27 g/cm{sup 3} (film porosity ~ 3%) down to 1.64 g/cm{sup 3} (~ 30% porosity) were fabricated by magnetron sputtering at argon pressures varying from 0.2 Pa to 2.6 Pa, respectively. High density Si thin film anodes of 2.27 g/cm{sup 3} suffered from an unstable cycling behavior during charging/discharging depicted by a continuous reduction in specific down to ~ 830 mAh/g at the 100th cycle. Electrochemical properties of lower density films with 1.99 g/cm{sup 3} (~ 15% porosity) and 1.77 g/cm{sup 3} (~ 24% porosity) got worse resulting in only ~ 100 mAh/g capacity at 100th cycle. On the other hand, as the density of anode was further reduced down to about 1.64 g/cm{sup 3} (~ 30% porosity), cycling stability and capacity retention significantly improved resulting in specific capacity values ~ 650 mAh/g at 100th cycle with coulombic efficiencies of > 98%. Enhancement in our low density Si film anodes are believed to mainly originate from the availability of voids for volumetric expansion during lithiation and resulting compliant behavior that provides superior mechanical and electrochemical stability. - Highlights: • Low density Si thin films were studied as Li-ion battery anodes. • Low density Si films were fabricated by magnetron sputter deposition. • Density of Si films reduced down to as low as ~ 1.64 g/cm{sup 3} with a porosity of ~ 30% • Low density Si films presented superior mechanical properties during cycling.

Structural and optical investigations of sol–gel derived lithium titanate thin films

International Nuclear Information System (INIS)

Łapiński, M.; Kościelska, B.; Sadowski, W.

2012-01-01

Highlights: ► Lithium titanate thin films were deposited on glass substrates by sol–gel method. ► After annealing at 550 °C samples had lithium titanate spinel structure. ► Above 80 h of annealing mixture of lithium titanate and titanium oxides was appeared. ► Optical transmittance decreased with increasing of annealing time. - Abstract: In this paper structural and optical studies of lithium titanate (LTO) thin films are presented. Nanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible lithium titanate phase was obtained after 20 h annealing. Increasing of annealing time over 20 h revealed appearance of titanium oxides phase. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength with increasing of annealing time. The optical band gap was calculated for direct allowed and indirect allowed transitions from optical absorption spectra.

Characterization of organic thin films

CERN Document Server

Ulman, Abraham; Evans, Charles A

2009-01-01

Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

Instability of flow of liquid film over a heated surface

International Nuclear Information System (INIS)

Sha, W.T.

1994-01-01

Fundamental concepts and basic equations of a flowing thin liquid film cooling a heated surfaced by its vaporization and the effect of dry patches were treated. Stable film flow prior to the appearance of dry patches on the heated surface is maintained by a balance of various forces due to surface tension, shear stress, heat and mass transfer, and gravity. Film splitting at a critical film thickness produces dry patches due to perturbation by waves on a perfect surface, and often by surface imperfection and uneven heating. This work is primarily motivated by the design of next-generation nuclear reactors, which employ many novel passive heat-removal systems via natural circulation. These systems are design to prevent damage to the reactor core and containment without action by the reactor operators during or after a design basis accident such as a loss of coolant accident (LOCA) or a main steam-line break (MSLB) accident

Photo-induced hydrophilicity of TiO2-xNx thin films on PET plates

International Nuclear Information System (INIS)

Chou, H.-Y.; Lee, E.-K.; You, J.-W.; Yu, S.-S.

2007-01-01

TiO 2-x N x thin films were deposited on PET (polyethylene terephthalate) plates by sputtering a TiN target in a N 2 /O 2 plasma and without heating. X-ray photoemission spectroscopy (XPS) was used to investigate the N 1s, Ti 2p core levels and the nitrogen composition in the TiO 2-x N x films. The results indicate that Ti-O-N bonds are formed in the thin films. Two nitrogen states, substitution and interstitial nitrogen atoms, were attributed to peaks at 396 and 399 eV, respectively. It was observed that the nitrogen atoms occupy both the substitutive and interstitial sites in respective of the nitrogen content in the thin films. UV-VIS absorption spectroscopy of PET coated thin films shows a significant shift of the absorption edge to lower energy in the visible-light region. UV and visible-light irradiation are used to activate PET coated thin films for the development of hydrophilicity. The photo-induced surface wettability conversion reaction of the thin films has been investigated by means of water contact angle measurement. PET plates coated with TiO 2-x N x thin films are found to exhibit lower water contact angle than non-coated plates when the surface is illuminated with UV and visible light. The effects of nitrogen doping on photo-generated hydrophilicity of the thin films are investigated in this work

Investigations of electrical and optical properties of functional TCO thin films

Directory of Open Access Journals (Sweden)

Domaradzki Jarosław

2015-06-01

Full Text Available Transparent conducting oxide (TCO films of indium-tin-oxide were evaporated on the surface of silicon wafers after phosphorous diffusion and on the reference glass substrates. The influence of deposition process parameters (electron beam current, oxygen flow and the substrate temperature on optical and electrical properties of evaporated thin films were investigated by means of resistivity measurements and optical spectrophotometry. The performance of prepared thin films was judged by calculated figure of merit and the best result was obtained for the sample deposited on the substrate heated to the 100 °C and then removed from the deposition chamber and annealed in an air for 5 minutes at 400 °C. Refractive index and extinction coefficient were evaluated based on measured transmission spectra and used for designing of antireflection coating for solar cell. The obtained results showed that prepared TCO thin films are promising as a part of counter electrode in crystalline silicon solar cell construction.

Phonon and thermal properties of exfoliated TaSe2 thin films

International Nuclear Information System (INIS)

Yan, Z.; Jiang, C.; Renteria, J.; Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Salguero, T. T.; Goli, P.; Balandin, A. A.

2013-01-01

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe 2 ) obtained via the “graphene-like” mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E 2g peak of TaSe 2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A 1g and E 2g , are −0.013 and −0.0097 cm −1 / o C, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ∼16 W/mK to ∼9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe 2 channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe 2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials

Phonon and thermal properties of exfoliated TaSe2 thin films

Science.gov (United States)

Yan, Z.; Jiang, C.; Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Goli, P.; Renteria, J.; Salguero, T. T.; Balandin, A. A.

2013-11-01

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the "graphene-like" mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E2g peak of TaSe2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A1g and E2g, are -0.013 and -0.0097 cm-1/oC, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ˜16 W/mK to ˜9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe2 channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

Numerical and experimental analysis of a thin liquid film on a rotating disk related to development of a spacecraft absorption cooling system

Science.gov (United States)

Faghri, Amir; Swanson, Theodore D.

1989-01-01

The numerical and experimental analysis of a thin liquid film on a rotating and a stationary disk related to the development of an absorber unit for a high capacity spacecraft absorption cooling system, is described. The creation of artificial gravity by the use of a centrifugal field was focused upon in this report. Areas covered include: (1) One-dimensional computation of thin liquid film flows; (2) Experimental measurement of film height and visualization of flow; (3) Two-dimensional computation of the free surface flow of a thin liquid film using a pressure optimization method; (4) Computation of heat transfer in two-dimensional thin film flow; (5) Development of a new computational methodology for the free surface flows using a permeable wall; (6) Analysis of fluid flow and heat transfer in a thin film in the presence and absence of gravity; and (7) Comparison of theoretical prediction and experimental data. The basic phenomena related to fluid flow and heat transfer on rotating systems reported here can also be applied to other areas of space systems.

Anisotrophic currents and flux jumps in high-Tc superconducting films with self-organized arrays of planar defects

International Nuclear Information System (INIS)

Yurchenko, V.V.; Qviller, A.J.; Mozhaev, P.B.; Mozhaeva, J.E.; Hansen, J.B.; Jacobsen, C.S.; Kotelyanskii, I.M.; Pan, A.V.; Johansen, T.H.

2010-01-01

Regular arrays of planar defects with a period of a few nanometers can be introduced in superconducting YBa 2 Cu 3 O 7-δ (YBCO) thin films by depositing them on vicinal (also called miscut or tilted) substrates. This results in the anisotropy of critical currents flowing in the plane of the film. We present results of real-time magneto-optical imaging (MOI) of magnetic flux distribution and dynamics in a series of YBCO thin films deposited on NdGaO 3 substrates with different miscut angles θ. MOI allows reconstructing the current flow profiles. From the angle formed between domains with different directions of the current flow we determine the anisotropy parameter of the in-plane current, as well as its field and temperature dependences. The artificially introduced defects also have a dramatic effect on the dynamics of the flux propagation: for 10 o o the magnetic flux propagates along the easy channels intermittently, i.e. in a form of flux jumps. This behavior is indicative of thermo-magnetic instability in superconductors, but we argue that this effect can be of a different nature.

Numerical study on film cooling and convective heat transfer characteristics in the cutback region of turbine blade trailing edge

Directory of Open Access Journals (Sweden)

Xie Yong-Hui

2016-01-01

Full Text Available Gas turbine blade trailing edge is easy to burn out under the exposure of high-temperature gas due to its thin shape. The cooling of this area is an important task in gas turbine blade design. The structure design and analysis of trailing edge is critical because of the complexity of geometry, arrangement of cooling channels, design requirement of strength, and the working condition of high heat flux. In the present paper, a 3-D model of the trailing edge cooling channel is constructed and both structures with and without land are numerically investigated at different blowing ratio. The distributions of film cooling effectiveness and convective heat transfer coefficient on cutback and land surface are analyzed, respectively. According to the results, it is obtained that the distributions of film cooling effectiveness and convective heat transfer coefficient both show the symmetrical characteristics as a result of the periodic structure of the trailing edge. The increase of blowing ratio significantly improves the film cooling effectiveness and convective heat transfer coefficient on the cutback surface, which is beneficial to the cooling of trailing edge. It is also found that the land structure is advantageous for enhancing the streamwise film cooling effectiveness of the trailing edge surface while the film cooling effectiveness on the land surface remains at a low level. Convective heat transfer coefficient exhibits a strong dependency with the blowing ratio, which suggests that film cooling effectiveness and convective heat transfer coefficient must be both considered and analyzed in the design of trailing edge cooling structure.

Heat-flux gage measurements on a flat plate at a Mach number of 4.6 in the VSD high speed wind tunnel, a feasibility test (LA28). [wind tunnel tests of measuring instruments for boundary layer flow

Science.gov (United States)

1975-01-01

The feasibility of employing thin-film heat-flux gages was studied as a method of defining boundary layer characteristics at supersonic speeds in a high speed blowdown wind tunnel. Flow visualization techniques (using oil) were employed. Tabulated data (computer printouts), a test facility description, and photographs of test equipment are given.

Heat transfer and critical heat flux in a asymmetrically heated tube helicoidal flow

International Nuclear Information System (INIS)

Boscary, J.

1995-10-01

The design of plasma facing components is crucial for plasma performance in next fusion reactors. These elements will be submitted to very high heat flux. They will be actively water-cooled by swirl tubes in the subcooled boiling regime. High heat flux experiments were conducted in order to analyse the heat transfer and to evaluate the critical heat flux. Water-cooled mock-ups were one-side heated by an electron beam gun for different thermal-hydraulic conditions. The critical heat flux was detected by an original method based on the isotherm modification on the heated surface. The wall heat transfer law including forced convection and subcooled boiling regimes was established. Numerical calculations of the material heat transfer conduction allowed the non-homogeneous distribution of the wall temperature and of the wall heat flux to be evaluated. The critical heat flux value was defined as the wall maximum heat flux. A critical heat flux model based on the liquid sublayer dryout under a vapor blanket was established. A good agreement with test results was found. (author). 198 refs., 126 figs., 21 tabs

Self-Limited Growth in Pentacene Thin Films.

Science.gov (United States)

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

Role of Ion Bombardment, Film Thickness and Temperature of Annealing on PEC Activity of Very-thin Film Hematite .

Czech Academy of Sciences Publication Activity Database

Kment, Š.; Čada, M.; Hubička, Z.; Krýsa, J.; Kmentová, Hana; Olejníček, J.; Zlámalová Cílová, Z.; Zbořil, R.

2016-01-01

Roč. 41, č. 27 (2016), s. 11547-11557 ISSN 0360-3199. [International Conference on Hydrogen Energy /1./. Aveiro, 20.07.2015-22.07.2015] Institutional support: RVO:67985858 Keywords : ion flux density * hematite photoanode * thin films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.582, year: 2016

Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

International Nuclear Information System (INIS)

Bae, J.W.; Kim, J.S.; Yeom, G.Y.

2001-01-01

Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

Thin films for precision optics

International Nuclear Information System (INIS)

Araujo, J.F.; Maurici, N.; Castro, J.C. de

1983-01-01

The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

Analysis of Hard Thin Film Coating

Science.gov (United States)

Shen, Dashen

1998-01-01

MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Thin-film solar cell

NARCIS (Netherlands)

Metselaar, J.W.; Kuznetsov, V.I.

1998-01-01

The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

Influence of annealing on texture properties of cerium oxide thin films

International Nuclear Information System (INIS)

Arunkumar, P.; Suresh Babu, K.; Ramaseshan, R.; Dash, S.

2013-01-01

Future power demand needs an energy source with higher efficiency, better power density, clean energy and fuel flexibility. Solid oxide fuel cell (SOFC) is one of the potential sources for future needs. Though the polymer and direct methanol based electrolyte are much suitable, for versatile applications (portable devices) they are having major challenges such as design, platinum based catalyst, lower power density and fuel flexibility (free from hydrocarbons). However, in SOFC the high operating temperature is the only major issue. Operating temperature of SOFC could be reduced by proper selection of electrolyte material which should have minimum ionic conductivity of 0.1 Scm -1 at reduced activation energy. This can be achieved by thin film based doped cerium oxide electrolyte for SOFC, leads to Intermediate Temperature Solid Oxide Fuel Cell (ITSOFC). In the present work, we focus on the synthesis of cerium oxide and 20 mol % samarium doped cerium oxide (SDC) nanoparticles by co-precipitation method and to synthesis thin films of the same. Pellets of those powders were heat treated at different temperatures and used as targets for e-beam evaporation to fabricate thin film based electrolyte. Stoichiometry of both powders and thin films were confirmed by XRF and EPMA. GIXRD profiles of ceria and SDC thin films are shown below and a preferred orientation effect is observed in SDC films. In SDC films the X-ray peaks have a shift towards lower angles, due to the difference in ionic radii of Ce 4+ and Sm 3+ . The band gap of CeO 2 (2.88 eV) from optical absorption technique indicates the presence of Ce 3+ with Ce 4+ , indirectly shows the concentration of oxygen vacancies which is required for the thin film electrolyte

Thin-Film Material Science and Processing | Materials Science | NREL

Science.gov (United States)

Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

Nanocrystal thin film fabrication methods and apparatus

Science.gov (United States)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

2018-01-09

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Numerical study of evaporation in a vertical annulus heated at the inner wall

International Nuclear Information System (INIS)

Ben Radhia, R.; Ben Jabrallah, S.; Ben Jabrallah, S.; Corriou, J.P.; Harmand, S.

2011-01-01

Mixed convection during evaporation of a water falling film in a vertical concentric annulus was studied numerically. The water thin film falls on the inner tube and is subjected to a constant heat flux density, whereas the outer cylinder is assumed to be insulated and dry. An imposed air flow circulates within the gap between the two concentric tubes. The objective of this work is to understand the evaporation phenomenon in order to improve the average evaporated mass flux density and heat and mass transfer. Conservative equations governing the gas phase are solved numerically using the finite volume method. In the liquid phase, a method based on local heat and mass balances on each level is used. Thus, the following liquid film parameters, feed water mass flow, feed temperature and heat flux density, are taken into account. The obtained results are analyzed to emphasize and evaluate the influence of the previous operating parameters and the annulus curvature on the effective evaporation surface and on the mass flux density of evaporated water. (authors)

Formation of Ag nanoparticles in percolative Ag–PbTiO3 composite thin films through lead-rich Ag–Pb alloy particles formed as transitional phase

International Nuclear Information System (INIS)

Hu, Tao; Wang, Zongrong; Su, Yanbo; Tang, Liwen; Shen, Ge; Song, Chenlu; Han, Gaorong; Weng, Wenjian; Ma, Ning; Du, Piyi

2012-01-01

The Ag nanoparticle dispersed percolative PbTiO 3 ceramic thin film was prepared in situ by sol–gel method with excess lead introduced into a sol precursor. The influence of excess lead and the heat treatment time on the formation of Ag nanoparticles was investigated by energy dispersive X-ray spectra, scanning electron microscopy, X-ray diffraction, and ultraviolet–visible absorption spectra. Results showed that the excess lead introduced into the sol precursor was in favor of the crystallization of the thin film and in favor of formation of the perovskite phase without the pyrochlore phase. Lead-rich Ag–Pb alloy particles first formed in the thin films and then decomposed to become large numbers of Ag nanoparticles of about 3 nm in size in the thin films when the heat treatment time was longer than 2 min. The content of the Ag nanoparticles increased with increasing the heat treatment time. The percolative behavior appears typically in the Ag nanoparticle dispersed thin films. The dielectric constant of the thin film was about 3 times of that without Ag nanoparticles. - Highlights: ► The Ag nanoparticles formed in the PbTiO 3 percolative ceramic thin film. ► The Ag–Pb alloy particles formed as transitional phase during thin film preparation. ► The lead-rich Ag–Pb alloy particles decomposed to form Ag nanoparticles in the film. ► Permittivity of the thin film is 3 times higher than that without Ag nanoparticles.

Properties of thermometric NbSi thin films and application to detection in astrophysics

Energy Technology Data Exchange (ETDEWEB)

Marrache-Kikuchi, C.A. [CSNSM, CNRS-IN2P3, Bat 108, 91405 Orsay Campus (France)]. E-mail: kikuchi@csnsm.in2p3.fr; Berge, L. [CSNSM, CNRS-IN2P3, Bat 108, 91405 Orsay Campus (France); Collin, S. [CSNSM, CNRS-IN2P3, Bat 108, 91405 Orsay Campus (France); Dobrea, C. [CSNSM, CNRS-IN2P3, Bat 108, 91405 Orsay Campus (France); Dumoulin, L. [CSNSM, CNRS-IN2P3, Bat 108, 91405 Orsay Campus (France); Juillard, A. [CSNSM, CNRS-IN2P3, Bat 108, 91405 Orsay Campus (France); Marnieros, S. [CSNSM, CNRS-IN2P3, Bat 108, 91405 Orsay Campus (France)

2006-04-15

We report the low-temperature study of very thin Nb{sub x}Si{sub 1-x} films that are used in various systems for astrophysical detection with bolometers. We have decreased the thin film thicknesses from 60nm down to 12.5nm and shown that the sensitivity gain due to lowering the heat capacity is not to the detriment of the electron-phonon coupling or to noise characteristics. On the superconducting side, we show that, at small thicknesses, the critical temperature and the normal resistance can be adjusted by tuning the thickness and the composition of the films.

Thin film polarizer and color filter based on photo-polymerizable nematic liquid crystal

Science.gov (United States)

Mohammadimasoudi, Mohammad; Neyts, Kristiaan; Beeckman, Jeroen

2015-03-01

We present a method to fabricate a thin film color filter based on a mixture of photo-polymerizable liquid crystal and chiral dopant. A chiral nematic liquid crystal layer reflects light for a certain wavelength interval Δλ (= Δn.P) with the period and Δn the birefringence of the liquid crystal. The reflection band is determined by the chiral dopant concentration. The bandwidth is limited to 80nm and the reflectance is at most 50% for unpolarized incident light. The thin color filter is interesting for innovative applications like polarizer-free reflective displays, polarization-independent devices, stealth technologies, or smart switchable reflective windows to control solar light and heat. The reflected light has strong color saturation without absorption because of the sharp band edges. A thin film polarizer is developed by using a mixture of photo-polymerizable liquid crystal and color-neutral dye. The fabricated thin film absorbs light that is polarized parallel to the c axis of the LC. The obtained polarization ratio is 80% for a film of only 12 μm. The thin film polarizer and the color filter feature excellent film characteristics without domains and can be detached from the substrate which is useful for e.g. flexible substrates.

Measurement of incident molecular temperature in the formation of organic thin films

Science.gov (United States)

Abe, Takahiro; Matsubara, Ryosuke; Hayakawa, Munetaka; Shimoyama, Akifumi; Tanaka, Takaaki; Tsuji, Akira; Takahashi, Yoshikazu; Kubono, Atsushi

2018-03-01

To investigate the effects of incident molecular temperature on organic-thin-film growth by vacuum evaporation, quantitative analysis of molecular temperature is required. In this study, we propose a method of determining molecular temperature based on the heat exchange between a platinum filament and molecular vapor. Molecular temperature is estimated from filament temperature, which remains unchanged even under molecular vapor supply. The results indicate that our method has sufficient sensitivity to evaluate the molecular temperature under the typical growth rate used for fabrication of functional organic thin films.

Preparation of TiO2 thin films from autoclaved sol containing needle-like anatase crystals

International Nuclear Information System (INIS)

Ge Lei; Xu Mingxia; Fang Haibo; Sun Ming

2006-01-01

A new inorganic sol-gel method was introduced in this paper to prepare TiO 2 thin films. The autoclaved sol with needle-like anatase crystals was synthesized using titanyl sulfate (TiOSO 4 ) and peroxide (H 2 O 2 ) as starting materials. The transparent anatase TiO 2 thin films were prepared on glass slides from the autoclaved sol by sol-gel dip-coating method. A wide range of techniques such as Fourier transform infrared transmission spectra (FT-IR), X-ray diffraction (XRD), thermogravimetry-differential thermal analysis (TG-DTA), scanning electron microscopes, X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectrum were applied to characterize the autoclaved sol and TiO 2 thin films. The results indicate that the autoclaved sol is flavescent, semitransparent and stable at room temperature. The anatase crystals of TiO 2 films connect together to form net-like structure after calcined and the films become uniform with increasing heating temperature. The surface of the TiO 2 films contain not only Ti and O elements, but also a small amount of N and Na elements diffused from substrates during heat treatment. The TiO 2 films are transparent and their maximal light transmittances exceed 80% under visible light region

Magnetic structures in ultra-thin Holmium films: Influence of external magnetic field

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, L.J. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Mello, V.D. [Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Anselmo, D.H.A.L. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Vasconcelos, M.S., E-mail: mvasconcelos@ect.ufrn.br [Escola de Ciência e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, RN (Brazil)

2015-03-01

We address the magnetic phases in very thin Ho films at the temperature interval between 20 K and 132 K. We show that slab size, surface effects and magnetic field due to spin ordering impact significantly the magnetic phase diagram. Also we report that there is a relevant reduction of the external field strength required to saturate the magnetization and for ultra-thin films the helical state does not form. We explore the specific heat and the susceptibility as auxiliary tools to discuss the nature of the phase transitions, when in the presence of an external magnetic field and temperature effects. The presence of an external field gives rise to the magnetic phase Fan and the spin-slip structures. - Highlights: • We analyze the magnetic phases of very thin Ho films in the temperature interval 20–132 K. • We show that slab size, etc. due to spin ordering may impact the magnetic phase diagram. • All magnetic phase transitions, for strong magnetic fields, are marked by the specific heat. • The presence of an external field gives rise to the magnetic phase Fan and the spin-slip one.

Measurement of positron reemission from thin single-crystal W(100) films

International Nuclear Information System (INIS)

Chen, D.M.; Lynn, K.G.; Pareja, R.; Nielsen, B.

1985-01-01

Epitaxial thin single-crystal (100) tungsten films 1000, 2500, and 5000 A thick have been fabricated by high-vacuum electron-beam evaporation. These films were subsequently used as thin-film moderators for the study of the positron-transmission-reemission process with a variable-energy (0--80 keV) monoenergetic positron beam in an ultrahigh-vacuum system. The films were shown to be routinely cleanable by heating first in oxygen (10 -6 Torr) and then in vacuum (10 -9 Torr). Transmission and back reemission of slow positrons from these surfaces was observed. The positron work function, phi/sub +/ has been determined to be approx. =3.0 eV ( +- 0.3 eV). The transmission slow positrons were emitted in a narrow cone with a full width at half maximum of approx. =30 0 consistent with the angular distribution of back-reemission positrons. The reemitted yields as a function of incident positron energy were found to be very different between forward reemission and back reemission. The maximum forward-reemission yields were 18% for 1000-A-thick W film and 12% for 2500-A-thick W film at 5 and 10 keV optimum incident positron energies, respectively. These results show that one can use thin single-crystal tungsten films as positron moderators or remoderators

APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics

Science.gov (United States)

KC, Pratik; Rai, Amit; Ashton, Taylor S.; Moore, Arden L.

2017-12-01

The ability of graphene to serve as an ultrathin heat spreader has been previously demonstrated with impressive results. However, graphene is electrically conductive, making its use in contact with electronic devices problematic from a reliability and integration perspective. As an alternative, hexagonal boron nitride (h-BN) is a similarly structured material with large in-plane thermal conductivity but which possesses a wide band gap, thereby giving it potential to be utilized for directing contact, near-junction thermal management of electronics without shorting or the need for an insulating intermediate layer. In this work, the viability of using large area, continuous h-BN thin films as direct contact, near-junction heat spreaders for electronic devices is experimentally evaluated. Thin films of h-BN several square millimeters in size were synthesized via an atmospheric pressure chemical vapor deposition (APCVD) method that is both simple and scalable. These were subsequently transferred onto a microfabricated test device that simulated a multigate transistor while also allowing for measurements of the device temperature at various locations via precision resistance thermometry. Results showed that these large-area h-BN films with thicknesses of 77-125 nm are indeed capable of significantly lowering microdevice temperatures, with the best sample showing the presence of the h-BN thin film reduced the effective thermal resistance by 15.9% ± 4.6% compared to a bare microdevice at the same power density. Finally, finite element simulations of these experiments were utilized to estimate the thermal conductivity of the h-BN thin films and identify means by which further heat spreading performance gains could be attained.

Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Tohsophon, T.; Huepkes, J.; Calnan, S.; Reetz, W.; Rech, B.; Beyer, W.; Sirikulrat, N.

2006-01-01

The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-reactive magnetron sputtering from metallic and ceramic targets, respectively. Additionally, we characterized surface textured AZO films, which are used as light scattering transparent conductive oxide (TCO) in silicon thin film solar cells. For all films a degradation of the electrical film properties was found after the damp heat treatment. For thick compact films, with large grain size, only a small increase in the electrical resistivity was observed, whereas less compact films prepared at high deposition pressures or very thin films (< 300 nm) showed an increase in resistivity by up to a factor of three already after 300 h. The conductivity degradation during damp heat treatment could be largely reversed by annealing in vacuum. However, annealing temperatures of at least 150 deg. C were required. Possible mechanisms explaining the experimental results are discussed

Characterizations of photoconductivity of graphene oxide thin films

Directory of Open Access Journals (Sweden)

Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

Grain Growth in Nanocrystalline Mg-Al Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kruska, Karen; Rohatgi, Aashish; Vemuri, Venkata Rama Ses; Kovarik, Libor; Moser, Trevor H.; Evans, James E.; Browning, Nigel D.

2017-10-05

An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg - Al thin films containing ~10 wt.% Al and with 14.5 nm average grain size were produced by magnetron-sputtering and subjected to heat-treatments. The grain growth evolution in the early stages of heat treatment at 423 K (150 °C), 473 K (200 °C) and 573K (300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7±2 and the activation energy for grain growth was 31.1±13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.

Effect of Thermal Cycling on Zinc Antimonide Thin Film Thermoelectric Characteristics

DEFF Research Database (Denmark)

Mirhosseini, M.; Rezania, A.; Rosendahl, L.

2017-01-01

In this study, performance and stability of zinc antimonide thin film thermoelectric sample is analyzed under transient thermal conditions. The thermoelectric materials are deposited on glass based substrate where the heat flow is parallel with the thermoelectric element length. The specimen...

Effects of the substrate temperature on the properties of CuIn{sub 5}S{sub 8} thin films

Energy Technology Data Exchange (ETDEWEB)

Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

2011-10-01

Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn{sub 5}S{sub 8} thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 5} cm{sup -1} at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 250 deg. C.

Development of neutron diffuse scattering analysis code by thin film and multilayer film

International Nuclear Information System (INIS)

Soyama, Kazuhiko

2004-01-01

To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

Dual Phase Lag Model of Melting Process in Domain of Metal Film Subjected to an External Heat Flux

Directory of Open Access Journals (Sweden)

Mochnacki B.

2016-12-01

Full Text Available Heating process in the domain of thin metal film subjected to a strong laser pulse are discussed. The mathematical model of the process considered is based on the dual-phase-lag equation (DPLE which results from the generalized form of the Fourier law. This approach is, first of all, used in the case of micro-scale heat transfer problems (the extremely short duration, extreme temperature gradients and very small geometrical dimensions of the domain considered. The external heating (a laser action is substituted by the introduction of internal heat source to the DPLE. To model the melting process in domain of pure metal (chromium the approach basing on the artificial mushy zone introduction is used and the main goal of investigation is the verification of influence of the artificial mushy zone ‘width’ on the results of melting modeling. At the stage of numerical modeling the author’s version of the Control Volume Method is used. In the final part of the paper the examples of computations and conclusions are presented.

Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

Energy Technology Data Exchange (ETDEWEB)

Fujii, S., E-mail: fujii.s.ap@m.titech.ac.jp [Department of Applied Chemistry, Tokyo Institute of Technology, Tokyo 152-8522 (Japan); Department of Information and Communication System Engineering, National Institute of Technology, Okinawa College, Nago, Okinawa 905-2192 (Japan); Kawamura, S.; Maitani, M. M.; Suzuki, E.; Wada, Y. [Department of Applied Chemistry, Tokyo Institute of Technology, Tokyo 152-8522 (Japan); Mochizuki, D. [Interdisciplinary Cluster for Cutting Edge Research, Center for Energy and Environmental Science, Shinshu University, Ueda, Nagano 386-8567 (Japan)

2015-12-15

Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process.

Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

Directory of Open Access Journals (Sweden)

S. Fujii

2015-12-01

Full Text Available Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process.

Thin film tritium dosimetry

Science.gov (United States)

Moran, Paul R.

1976-01-01

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Thin films for emerging applications v.16

CERN Document Server

Francombe, Maurice H

1992-01-01

Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

Hydrodynamic stability of thermoviscous liquid film inside a rotating horizontal cylinder: Heating and cooling effects

Science.gov (United States)

Kumawat, Tara Chand; Tiwari, Naveen

2018-03-01

Steady two-dimensional solutions and their stability analysis are presented for thin film of a thermoviscous liquid flowing inside a cylinder rotating about its horizontal axis. The inner surface of the cylinder is either uniformly hotter or colder than the enveloping air. The mass, momentum, and energy equations are simplified using thin-film approximation. The analytically obtained film thickness evolution equation consists of various dimensionless parameters such as gravitational number, Bond number, Biot number, thermoviscosity number, and Marangoni number. The viscosity of the liquid is considered as an exponential function of temperature. The viscosity increases (decreases) within the film thickness away from the inner surface of the cylinder when the surface is uniformly hotter (colder) than the atmosphere. For hotter (colder) surface, the film thickness on the rising side decreases (increases) when convective heat transfer at the free surface is increased. The surface tension gradient at the free surface generates Marangoni stress that has a destabilizing (stabilizing) effect on the thin film flow in the case of a hotter (colder) cylinder. The thermoviscosity number stabilizes (destabilizes) the flow on a heating (cooling) surface and this effect increases with an increase in the heat transfer at the free surface. For a hotter surface and in the presence of Marangoni stress, the convective heat transfer at the interface has the destabilizing effect for small values of the Biot number and assumes a stabilizing role for larger values. Non-linear simulations show consistency with the linear stability analysis.

Interfaces and thin films physics

International Nuclear Information System (INIS)

Equer, B.

1988-01-01

The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

Buckling of Thin Films in Nano-Scale

Directory of Open Access Journals (Sweden)

Li L.A.

2010-06-01

Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology

2017-11-01

Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

The effect of a thin silver layer on the critical current of epitaxial YBCO films

International Nuclear Information System (INIS)

Polturak, E.; Koren, G.; Cohen, D.; Cohen, D.; Snapiro, I.

1992-01-01

We compare measurements of the critical current density of an epitaxial YBCO film with that of an identical film overlaid by a thin silver layer. We find that the presence of the silver lowers Tc of the film by about 1.5 K, which is two orders of magnitude larger than predicted by the theory of the proximity effect for our experimental conditions. In addition, J c of the Ag/YBCO film near Tc is also significantly lower than that of the bare YBCO film. We propose two alternate interpretations of this effect, one in terms of destabilization of the flux distribution in the film and the other making use of the effect of the silver on the Bean-Livingston surface barrier for the initial penetration of flux. The latter seems the more plausible explanation of our results. (orig.)

Dense CdS thin films on fluorine-doped tin oxide coated glass by high-rate microreactor-assisted solution deposition

Energy Technology Data Exchange (ETDEWEB)

Su, Yu-Wei, E-mail: suyuweiwayne@gmail.com [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ramprasad, Sudhir [Energy Processes and Materials Division, Pacific Northwest National Laboratory, Corvallis, OR 9730 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Han, Seung-Yeol; Wang, Wei [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ryu, Si-Ok [School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeonsan, Gyeongbuk 712-749 (Korea, Republic of); Palo, Daniel R. [Barr Engineering Co., Hibbing, MN 55747 (United States); Paul, Brian K. [School of Mechanical, Industrial and Manufacturing Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Chang, Chih-hung [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States)

2013-04-01

Continuous microreactor-assisted solution deposition is demonstrated for the deposition of CdS thin films on fluorine-doped tin oxide (FTO) coated glass. The continuous flow system consists of a microscale T-junction micromixer with the co-axial water circulation heat exchanger to control the reacting chemical flux and optimize the heterogeneous surface reaction. Dense, high quality nanocrystallite CdS thin films were deposited at an average rate of 25.2 nm/min, which is significantly higher than the reported growth rate from typical batch chemical bath deposition process. Focused-ion-beam was used for transmission electron microscopy specimen preparation to characterize the interfacial microstructure of CdS and FTO layers. The band gap was determined at 2.44 eV by UV–vis absorption spectroscopy. X-ray photon spectroscopy shows the binding energies of Cd 3d{sub 3/2}, Cd 3d{sub 5/2}, S 2P{sub 3/2} and S 2P{sub 1/2} at 411.7 eV, 404.8 eV, 162.1 eV and 163.4 eV, respectively. - Highlights: ► CdS films deposited using continuous microreactor-assisted solution deposition (MASD) ► Dense nanocrystallite CdS films can be reached at a rate of 25.2 [nm/min]. ► MASD can approach higher film growth rate than conventional chemical bath deposition.

Numerical simulation of fluid flow and heat transfer in a thin liquid film over a stationary and rotating disk and comparison with experimental data

Science.gov (United States)

Faghri, Amir; Swanson, Theodore D.

1990-01-01

In the first section, improvements in the theoretical model and computational procedure for the prediction of film height and heat-transfer coefficient of the free surface flow of a radially-spreading thin liquid film adjacent to a flat horizontal surface of finite extent are presented. Flows in the presence and absence of gravity are considered. Theoretical results are compared to available experimental data with good agreement. In the presence of gravity, a hydraulic jump is present, isolating the flow into two regimes: supercritical upstream from the jump and subcritical downstream of it. In this situation, the effects of surface tension are important near the outer edge of the disk where the fluid experiences a free fall. A region of flow separation is present just downstream of the jump. In the absence of gravity, no hydraulic jump or separated flow region is present. The variation of the heat-transfer coefficient for flows in the presence and absence of gravity are also presented. In the second section, the results of a numerical simulation of the flow field and associated heat transfer coefficients are presented for the free surface flow of a thin liquid film adjacent to a horizontal rotating disk. The computation was performed for different flow rates and rotational velocities using a 3-D boundary-fitted coordinate system. Since the geometry of the free surface is unknown and dependent on flow rate, rate of rotation, and other parameters, an iterative procedure had to be used to ascertain its location. The computed film height agreed well with existing experimental measurements. The flow is found to be dominated by inertia near the entrance and close to the free surface and dominated by centrifugal force at larger radii and adjacent to the disk. The rotation enhances the heat transfer coefficient by a significant amount.

Formation of hydrated layers in PMMA thin films in aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Akers, Peter W. [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); Nelson, Andrew R.J. [The Bragg Institute, Australian Nuclear Science and Technology Organisation, Menai, NSW (Australia); Williams, David E. [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); MacDiarmid Institute of Advanced Materials and Nanotechnology, Wellington (New Zealand); McGillivray, Duncan J., E-mail: d.mcgillivray@auckland.ac.nz [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); MacDiarmid Institute of Advanced Materials and Nanotechnology, Wellington (New Zealand)

2015-10-30

Graphical abstract: - Highlights: • Homogeneous thin PMMA films prepared on Si/SiOx substrates and measured in air and water. • Reproducible formation of highly hydrated layer containing 50% water at the PMMA/SiOx interface. • When heated the films swell at 50 °C without loss of material. • Upon re-cooling to 25 °C the surface roughens and material is lost. - Abstract: Neutron reflectometry (NR) measurements have been made on thin (70–150 Å) poly(methylmethacrylate) (PMMA) films on Si/SiOx substrates in aqueous conditions, and compared with parameters measured using ellipsometry and X-Ray reflectometry (XRR) on dry films. All techniques show that the thin films prepared using spin-coating techniques were uniform and had low roughness at both the silicon and subphase interfaces, and similar surface energetics to thicker PMMA films. In aqueous solution, NR measurements at 25 °C showed that PMMA forms a partially hydrated layer at the SiOx interface 10 Å under the film, while the bulk film remains intact and contains around 4% water. Both the PMMA film layer and the sublayer showed minimal swelling over a period of 24 h. At 50 °C, PMMA films in aqueous solution roughen and swell, without loss of PMMA material at the surface. After cooling back to 25 °C, swelling and roughening increases further, with loss of material from the PMMA layer.

Formation of hydrated layers in PMMA thin films in aqueous solution

International Nuclear Information System (INIS)

Akers, Peter W.; Nelson, Andrew R.J.; Williams, David E.; McGillivray, Duncan J.

2015-01-01

Graphical abstract: - Highlights: • Homogeneous thin PMMA films prepared on Si/SiOx substrates and measured in air and water. • Reproducible formation of highly hydrated layer containing 50% water at the PMMA/SiOx interface. • When heated the films swell at 50 °C without loss of material. • Upon re-cooling to 25 °C the surface roughens and material is lost. - Abstract: Neutron reflectometry (NR) measurements have been made on thin (70–150 Å) poly(methylmethacrylate) (PMMA) films on Si/SiOx substrates in aqueous conditions, and compared with parameters measured using ellipsometry and X-Ray reflectometry (XRR) on dry films. All techniques show that the thin films prepared using spin-coating techniques were uniform and had low roughness at both the silicon and subphase interfaces, and similar surface energetics to thicker PMMA films. In aqueous solution, NR measurements at 25 °C showed that PMMA forms a partially hydrated layer at the SiOx interface 10 Å under the film, while the bulk film remains intact and contains around 4% water. Both the PMMA film layer and the sublayer showed minimal swelling over a period of 24 h. At 50 °C, PMMA films in aqueous solution roughen and swell, without loss of PMMA material at the surface. After cooling back to 25 °C, swelling and roughening increases further, with loss of material from the PMMA layer.

Giant flux jumps through a thin superconducting Nb film in a vortex free region

International Nuclear Information System (INIS)

Tsindlekht, M.I.; Genkin, V.M.; Felner, I.; Zeides, F.; Katz, N.; Gazi, Š.; Chromik, Š.

2016-01-01

Highlights: Giant magnetic flux jumps into thin-walled cylinder were measured using peak up coil method in a swept magnetic field. Magnetic moment jumps were observed in magnetic fields lower and above Hc1. - Abstract: We measure the dynamics of magnetic field penetration into thin-walled superconducting niobium cylinders. It is shown that magnetic field penetrates through the wall of a cylinder in a series of giant jumps with amplitude 1 - 2 mT and duration of less than a microsecond in a wide range of magnetic fields, including the vortex free region. Surprisingly, the jumps take place when the total current in the wall, not the current density, exceeds a critical value. In addition, there are small jumps and/or smooth penetration, but their contribution reaches only ≃ 20 % of the total penetrating flux. The number of jumps decreases with increased temperature. Thermomagnetic instabilities cannot explain the experimental observations.

Giant flux jumps through a thin superconducting Nb film in a vortex free region

Energy Technology Data Exchange (ETDEWEB)

Tsindlekht, M.I., E-mail: mtsindl@vms.huji.ac.il [The Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Genkin, V.M.; Felner, I.; Zeides, F.; Katz, N. [The Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Gazi, Š.; Chromik, Š. [The Institute of Electrical Engineering SAS, Dúbravská cesta 9, 84104 Bratislava (Slovakia)

2016-10-15

Highlights: Giant magnetic flux jumps into thin-walled cylinder were measured using peak up coil method in a swept magnetic field. Magnetic moment jumps were observed in magnetic fields lower and above Hc1. - Abstract: We measure the dynamics of magnetic field penetration into thin-walled superconducting niobium cylinders. It is shown that magnetic field penetrates through the wall of a cylinder in a series of giant jumps with amplitude 1 - 2 mT and duration of less than a microsecond in a wide range of magnetic fields, including the vortex free region. Surprisingly, the jumps take place when the total current in the wall, not the current density, exceeds a critical value. In addition, there are small jumps and/or smooth penetration, but their contribution reaches only ≃ 20 % of the total penetrating flux. The number of jumps decreases with increased temperature. Thermomagnetic instabilities cannot explain the experimental observations.

Temperature dependence of LRE-HRE-TM thin films

Science.gov (United States)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.

Science.gov (United States)

Lee, Hye Ji; Noviyana, Imas; Putri, Maryane; Koo, Chang Young; Lee, Jung-A; Kim, Jeong-Joo; Jeong, Youngjun; Lee, Youngu; Lee, Hee Young

2018-02-01

IZTO20 (In0.6Zn0.2Sn0.2O1.5) ceramic target was prepared from oxide mixture of In2O3, ZnO, and SnO2 powders. IZTO20 thin films were then deposited onto glass substrate at 400 °C by DC magnetron sputtering. The average optical transmittance determined by ultraviolet-visible spectroscopy was higher than 85% for all films. The minimum resistivity of the annealed IZTO20 thin film was approximately 6.1×10-4 Ω·cm, which tended to increase with decreasing indium content. Substrate heating and annealing were found to be important parameters affecting the electrical and optical properties. An organic photovoltaic (OPV) cell was fabricated using the IZTO20 film deposited under the optimized condition as an anode electrode and the efficiency of up to 80% compared to that of a similar OPV cell using ITO film was observed. Reduction of surface roughness and electrical resistivity through annealing treatment was found to contribute to the improved efficiency of the OPV cell.

Phonon transport in a curved aluminum thin film due to laser short pulse irradiation

Science.gov (United States)

Mansoor, Saad Bin; Yilbas, Bekir Sami

2018-05-01

Laser short-pulse heating of a curved aluminum thin film is investigated. The Boltzmann transport equation is incorporated to formulate the heating situation. A Gaussian laser intensity distribution is considered along the film arc and time exponentially decaying of pulse intensity is incorporated in the analysis. The governing equations of energy transport in the electron and lattice sub-systems are coupled through the electron-phonon coupling parameter. To quantify the phonon intensity distribution in the thin film, equivalent equilibrium temperature is introduced, which is associated with the average energy of all phonons around a local point when the phonon energies are redistributed adiabatically to an equilibrium state. It is found the numerical simulations that electron temperature follows similar trend to the spatial distribution of the laser pulse intensity at the film edge. Temporal variation of electron temperature does not follow the laser pulse intensity distribution. The rise of temperature in the electron sub-system is fast while it remains slow in the lattice sub-system.

Electrochemical synthesis of photoactive In/sub 2/Se/sub 3/ thin films

Energy Technology Data Exchange (ETDEWEB)

Herrero, J; Ortega, J

1987-12-01

In/sub 2/Se/sub 3/ thin films were grown by alternate electrodeposition of selenium and indium from separate baths onto titanium substrates with subsequent thermal annealing. The influence of annealing temperature on the properties of the obtained films was examined. The results of X-ray diffraction patterns led to the conclusion that films were ..beta..-phase when the temperature ranged between 300 and 500/sup 0/C. At 600/sup 0/C the thin film loses Se and the ratio Se/In decreases. Only photoanodic response, n-type thin films, was observed when the samples were tested in a photoelectrochemical cell with a sulfite/sulfate redox couple. Values of the photocurrent on the spectra response were increased when the annealing temperature was also increased, showing the best photocurrent values at 500/sup 0/C, and the films that were annealed at 600/sup 0/C showed no photoactivity. Spectral responses after chemical etching of the samples showed a significant increase of the photocurrent. Application of Gaertner-Butler's model to the interface semiconductor-electrolyte makes it possible to obtain the semiconductor energy gap, on samples heated at 500/sup 0/C, corresponding to a direct allowed band transition.

Thermoelectric properties of cobalt–antimonide thin films prepared by radio frequency co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz; Han, Seungwoo, E-mail: swhan@kimm.re.kr

2015-07-31

Co–Sb thin films with an Sb content in the range 65–76 at.%, were deposited on a thermally oxidized Si (100) substrate preheated at 200 °C using radio-frequency co-sputtering. Evaluation using scanning electron microscopy images and X-ray diffraction reveals that the films were polycrystalline, with a grain size in the range 100–250 nm. Energy-dispersive spectroscopy analysis indicates single-phase CoSb{sub 2} and CoSb{sub 3} films, as well as multiphase thin films with either CoSb{sub 2} or CoSb{sub 3} as the dominant phase. The electrical and thermoelectric properties were measured and found to be strongly dependent on the observed phases and the defect concentrations. The CoSb{sub 2} thin films were found to exhibit a significant n-type thermoelectric effect, which, coupled with the very low electrical resistivity, resulted in a larger power factor than that of the CoSb{sub 3} thin films. We find power factors of 0.73 mWm{sup −1} K{sup −2} and 0.67 mWm{sup −1} K{sup −2} for the CoSb{sub 2} and CoSb{sub 3} thin films, respectively. - Highlights: • Polycrystalline Co–Sb thin films were obtained by present deposition strategy. • CoSb{sub 2} and CoSb{sub 3} have semimetal and semiconductor characteristics respectively. • The Seebeck coefficient depends heavily on defect concentration and impurity phases. • Film properties in the second heating cycle were different from the first. • CoSb{sub 2} is found to possess significant n-type thermopower.

Anisotrophic currents and flux jumps in high-T{sub c} superconducting films with self-organized arrays of planar defects

Energy Technology Data Exchange (ETDEWEB)

Yurchenko, V.V., E-mail: vitaliy.yurchenko@fys.uio.n [Department of Physics, University of Oslo, P.B. 1048, Blindern, 0316 Oslo (Norway); Qviller, A.J. [Department of Physics, University of Oslo, P.B. 1048, Blindern, 0316 Oslo (Norway); Mozhaev, P.B.; Mozhaeva, J.E. [Department of Physics, Technical University of Denmark, Kgs. Lyngby DK-2800 (Denmark); Institute of Physics and Technology RAS, Moscow 117218 (Russian Federation); Hansen, J.B.; Jacobsen, C.S. [Department of Physics, Technical University of Denmark, Kgs. Lyngby DK-2800 (Denmark); Kotelyanskii, I.M. [Institute of Radio Engineering and Electronics RAS, Fryazino, 141190 Moscow District (Russian Federation); Pan, A.V. [Institute for Superconducting and Electronic Materials, University of Wollongong, Northfields Avenue, Wollongong 2522 (Australia); Johansen, T.H. [Department of Physics, University of Oslo, P.B. 1048, Blindern, 0316 Oslo (Norway)

2010-10-01

Regular arrays of planar defects with a period of a few nanometers can be introduced in superconducting YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}(YBCO) thin films by depositing them on vicinal (also called miscut or tilted) substrates. This results in the anisotropy of critical currents flowing in the plane of the film. We present results of real-time magneto-optical imaging (MOI) of magnetic flux distribution and dynamics in a series of YBCO thin films deposited on NdGaO{sub 3} substrates with different miscut angles {theta}. MOI allows reconstructing the current flow profiles. From the angle formed between domains with different directions of the current flow we determine the anisotropy parameter of the in-plane current, as well as its field and temperature dependences. The artificially introduced defects also have a dramatic effect on the dynamics of the flux propagation: for 10{sup o}<{theta}<14{sup o} the magnetic flux propagates along the easy channels intermittently, i.e. in a form of flux jumps. This behavior is indicative of thermo-magnetic instability in superconductors, but we argue that this effect can be of a different nature.

Simplified expression for the minimum hotspot current in long, thin-film superconductors

International Nuclear Information System (INIS)

Dharmadurai, G.; Murthy, N.S.S.

1979-01-01

A generalization of the Skocpol--Beasley--Tinkham hotspot theory to include an approximate temperature dependence of the conductive heat transfer term of the heat flow equations clearly indicates that the role of the thermal conductivity of the material of the film is not reflected in the observed temperature dependence of the minimum current I/sub h/ required to sustain a hotspot in a long, thin-film superconductor. This observation leads to the derivation of a simplified expression for I/sub h/ valid for a wider range of bath temperatures

Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

Science.gov (United States)

Dhere, Neelkanth G.

1997-03-01

techniques have paved the way for obtaining epitaxial Hg1-xCdxTe thin films at substrate temperatures of ~180 °C with the desired crystalline perfection, stoichiometry, and doping without the necessity of further annealing for improving either the crystalline quality or dopant activity. Retaining larger mercury proportions during annealing would require heated enclosures as in isothermal VPE, hot-wall technique, vacuum evaporation, hot-wall MOCVD, or close-space sublimation. Pb1-xCdxTe thin films can be prepared by magnetron sputtering from cooled Pb1-xCdxTe targets on heated substrates. Hot-wall technique is suitable for the deposition of Pb1-xCdxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe TPV cells will benefit from the substantial work on CdTe thin film solar cells. The paper reviews work on thin films of ternary and pseudoternary compounds of interest for TPV conversion and methods of their preparation with a view to choosing the appropriate materials and fabrication techniques for polycrystalline-thin-film TPV cells.

Counterintuitive Constraints on Chaos Formation Set by Heat Flux through Europa's Ocean

Science.gov (United States)

Goodman, J. C.

2013-12-01

Models for the formation of disruptive chaos features on the icy surface of Europa fall into two broad categories: either chaos is formed when basal heating causes localized melting and thinning of the ice shell, or basal heating drives diapiric convection within the ice shell. We argue that in both of these cases, heating of the ice shell from below does not lead to chaos formation at the location of heating. If chaos is formed when a localized oceanic heat source, such as a hydrothermal plume, "melts through" the ice crust, we must consider what happens to the melted liquid. If Europa's ocean is salty, the melt will form a buoyant pool inside the melted cavity, leading to a stable interface between cold fresh meltwater and warm salty seawater. This stable interface acts like an ablative heat shield, protecting the ice from further damage. Some heat can be transferred across the stable layer by double diffusion, but this transfer is very inefficient. We calculate that local ocean heating cannot be balanced by local flux through the stable layer: instead, the warm ocean water must spread laterally until it is delivering heat to the ice base on a regional or global scale (a heating zone hundreds or thousands of km across, for conservative parameters.) If chaos is formed by diapiric solid-state convection within the ice shell, many investigators have assumed that diapirism and chaos should be most prevalent where the basal heat flux is strongest. We argue that this is not the case. In Rayleigh-Benard convection, increasing the heat flux will make convection more vigorous --- if and only if the convecting layer thickness does not change. We argue that increased basal heat flux will thin the ice shell, reducing its Rayleigh number and making convection less likely, not more. This insight allows us to reverse the logic of recent discussions of the relationship between ocean circulation and chaos (for instance, Soderlund et al, 2013 LPSC). We argue that global oceanic

Study of mechanism of burnout in a high heat-flux boiling system with an impinging jet

International Nuclear Information System (INIS)

Katto, Y.; Monde, M.

1974-01-01

Nucleate boiling at very high heat fluxes was created on a heated surface covered with a flowing film of saturated water at atmospheric pressure being maintained by a small circular jet of water held at the center of the heated surface. It was found that increasing the heat flux led to a limiting state of flow where the splashing of droplets from the heated surface was no longer increased being kept constant until burnout appeared; and that there was a close relation between the burnout heat flux and the jet velocity. A flow model, which can explain the characteristics of this boiling system, is proposed. It is suggested that the burnout may be connected with the separation of a liquid flow from the heated surface accompanied with the effusion of vapor. (U.S.)

RF magnetron sputtered TiNiCu shape memory alloy thin film

International Nuclear Information System (INIS)

Fu Yongqing; Du Hejun

2003-01-01

Shape memory alloys (SMAs) offer a unique combination of novel properties, such as shape memory effect, super-elasticity, biocompatibility and high damping capacity, and thin film SMAs have the potential to become a primary actuating mechanism for micro-actuators. In this study, TiNiCu films were successfully prepared by mix sputtering of a Ti 55 Ni 45 target with a separated Cu target. Crystalline structure, residual stress and phase transformation properties of the TiNiCu films were investigated using X-ray diffraction (XRD), differential scanning calorimeter (DSC), and curvature measurement methods. Effects of the processing parameters on the film composition, phase transformation and shape-memory effects were analyzed. Results showed that films prepared at a high Ar gas pressure exhibited a columnar structure, while films deposited at a low Ar gas pressure showed smooth and featureless structure. Chemical composition of TiNiCu thin films was dependent on the DC power of copper target. DSC, XRD and curvature measurement revealed clearly the martensitic transformation of the deposited TiNiCu films. When the free-standing film was heated and cooled, a 'two-way' shape-memory effect can be clearly observed

Simulation of transformations of thin metal films heated by nanosecond laser pulses

Science.gov (United States)

Balandin, V. Yu.; Niedrig, R.; Bostanjoglo, O.

1995-01-01

The ablation of free-standing thin aluminum films by a nanosecond laser pulse was investigated by time-resolved transmission electron microscopy and numerical simulation. It was established that thin film geometry is particularly suited to furnish information on the mechanism of evaporation and the surface tension of the melt. In the case of aluminum the surface tension sigma as function of temperature can be approximated by two linear sections with a coefficient -0.3 x 10(exp -3) N/K m from the melting point 933 K up to 3000 K and -0.02 x 10(exp -3) N/K m above 3000 K, respectively, with sigma(993 K) = 0.9 N/m and sigma(8500 K) = 0. At lower pulse energies the films disintegrated predominantly by thermocapillary flow. Higher pulse energies produced volume evaporation, and a nonmonotonous flow, explained by recoil from evaporating atoms and thermocapillarity. The familiar equations of energy and motion, which presuppose separate and coherent vapor and liquid phases, were not adequate to describe the ablation of the hottest zone. Surface evaporation seemed to be marginal at all laser pulse energies used.

Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

Science.gov (United States)

Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

2017-10-01

This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

González, J.O. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); Shaji, S.; Avellaneda, D. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León, México (Mexico); Castillo, A.G.; Roy, T.K. Das [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); and others

2013-05-15

Highlights: ► AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films were formed by heating Na{sub 2}SeSO{sub 3} dipped Sb{sub 2}S{sub 3}/Ag layers. ► S/Se ratio was varied by changing the dipping time in Na{sub 2}SeSO{sub 3} solution. ► Characterized the films using XRD, XPS, SEM, Optical and electrical measurements. ► Band gap engineering of 1−1.1 eV for x = 0.51 and 0.52 respectively. ► PV Glass/FTO/CdS/AgSb(S{sub x}Se{sub 1−x}){sub 2}/C were prepared showing V{sub oc} = 410 mV, J{sub sc} = 5.7 mA/cm{sup 2}. - Abstract: Silver antimony sulfoselenide (AgSb(S{sub x}Se{sub 1−x}){sub 2}) thin films were prepared by heating glass/Sb{sub 2}S{sub 3}/Ag layers after selenization using sodium selenosulphate solution. First, Sb{sub 2}S{sub 3} thin films were deposited on glass substrates from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}. Then Ag thin films were thermally evaporated onto glass/Sb{sub 2}S{sub 3}, followed by selenization by dipping in an acidic solution of Na{sub 2}SeSO{sub 3}. The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Photovoltaic structures (PV) were prepared using AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed V

Application-related properties of giant magnetostrictive thin films

International Nuclear Information System (INIS)

Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

2002-01-01

In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

Correlations of Nucleate Boiling Heat Transfer and Critical Heat Flux for External Reactor Vessel Cooling

International Nuclear Information System (INIS)

J. Yang; F. B. Cheung; J. L. Rempe; K. Y. Suh; S. B. Kim

2005-01-01

Four types of steady-state boiling experiments were conducted to investigate the efficacy of two distinctly different heat transfer enhancement methods for external reactor vessel cooling under severe accident conditions. One method involved the use of a thin vessel coating and the other involved the use of an enhanced insulation structure. By comparing the results obtained in the four types of experiments, the separate and integral effect of vessel coating and insulation structure were determined. Correlation equations were obtained for the nucleate boiling heat transfer and the critical heat flux. It was found that both enhancement methods were quite effective. Depending on the angular location, the local critical heat flux could be enhanced by 1.4 to 2.5 times using vessel coating alone whereas it could be enhanced by 1.8 to 3.0 times using an enhanced insulation structure alone. When both vessel coating and insulation structure were used simultaneously, the integral effect on the enhancement was found much less than the product of the two separate effects, indicating possible competing mechanisms (i.e., interference) between the two enhancement methods

Optical and electrical properties of transparent conductive ITO thin films under proton radiation with 100 keV

International Nuclear Information System (INIS)

Wei, Q.; He, S.Y.; Yang, D.Z.; Liu, J.C.

2005-01-01

Under the simulation environment for the vacuum and heat sink in space, the changes in optical and electrical properties of transparent conductive indium tin oxide (ITO) thin films induced by radiation of protons with 100 keV were studied. The ITO thin films were deposited on JGS1 quartz substrate by a sol-gel method. The sheet resistance and transmittance spectra of the ITO thin films were measured using the four-point probe method and a spectrophotometer, respectively. The surface morphology was analyzed by AFM. The experimental results showed that the electrical and optical performances of the ITO thin films were closely related to the irradiation fluence. When the fluence exceeded a given value 2 x 10 16 cm -2 , the sheet resistance increased obviously and the optical transmittance decreased. The AFM analysis indicated that the grain size of the ITO thin films diminished. The studies about the radiation effect on ITO thin films will help to predict performance evolution of the second surface mirrors on satellites under space radiation environment. (orig.)

Photolithographically patterened thin-film multilayer devices of YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kingston, J.J.; Wellstood, F.C.; Quan, D.; Clarke, J.

1990-09-01

We have fabricated thin-film YBa 2 Cu 3 O 7-x -SrTiO 3 -YBa 2 Cu 3 O 7-x multilayer interconnect structures in which each in situ laser-deposited film is independently patterned by photolithography. In particular, we have constructed the two key components necessary for a superconducting multilayer interconnect technology, crossovers and window contacts. As a further demonstration of the technology, we have fabricated a thin-film flux transformer, suitable for use with a Superconducting QUantum Interference Device (SQUID), that includes a ten-turn input coil with 6μm linewidth. Transport measurements showed that the critical temperature was 87K and the critical current was 135 μA at 82K. 7 refs., 6 figs

Enhancement of Jc of MgB2 thin films by introduction of oxygen during deposition

International Nuclear Information System (INIS)

Mori, Zon; Doi, Toshiya; Hakuraku, Yoshinori; Kitaguchi, Hitoshi

2006-01-01

The introduction of various pinning center are examined as the effective means for improvement of J c of MgB 2 thin films. We have investigated the effects of introduction of oxygen during deposition on the superconducting properties of MgB 2 thin films. MgB 2 thin films were prepared on polished sapphire C(0001) single crystal substrates by using electron beam evaporation technique (EB) without any post-annealing. The background pressure was less than 1.3x10 -6 Pa. The evaporation flux ratio of Mg was set at 30 times as high as that of B, and the growth rate of MgB 2 film was 1nm/s. The film thickness was typically 300nm at 5min deposition. The substrate temperature was 245 deg. C. Under these conditions, we controlled the oxygen partial pressure (P O 2 ) within the range from 1.3x10 -6 to 1.3x10 -3 Pa by using a quadrapole mass spectrometer. Although T c of deposited thin film decreased in order of P O 2 , ΔM in the magnetization hysteresis loops measured from 0 to 6T at 4.2K increased up to 1.3x10 -5 . On the other hand, thin film prepared under P O 2 of 1.3x10 -3 Pa does not show superconducting transition. Between these films, there is no difference in the crystal structure from X-ray diffraction (XRD). These results suggest that the pinning center in the thin films increased by introduction of oxygen. Extremely small amount of oxygen introduction has enabled the control of growth of oxide

Towards Enhanced Performance Thin-film Composite Membranes via Surface Plasma Modification

Science.gov (United States)

Reis, Rackel; Dumée, Ludovic F.; Tardy, Blaise L.; Dagastine, Raymond; Orbell, John D.; Schutz, Jürg A.; Duke, Mikel C.

2016-01-01

Advancing the design of thin-film composite membrane surfaces is one of the most promising pathways to deal with treating varying water qualities and increase their long-term stability and permeability. Although plasma technologies have been explored for surface modification of bulk micro and ultrafiltration membrane materials, the modification of thin film composite membranes is yet to be systematically investigated. Here, the performance of commercial thin-film composite desalination membranes has been significantly enhanced by rapid and facile, low pressure, argon plasma activation. Pressure driven water desalination tests showed that at low power density, flux was improved by 22% without compromising salt rejection. Various plasma durations and excitation powers have been systematically evaluated to assess the impact of plasma glow reactions on the physico-chemical properties of these materials associated with permeability. With increasing power density, plasma treatment enhanced the hydrophilicity of the surfaces, where water contact angles decreasing by 70% were strongly correlated with increased negative charge and smooth uniform surface morphology. These results highlight a versatile chemical modification technique for post-treatment of commercial membrane products that provides uniform morphology and chemically altered surface properties. PMID:27363670

The deuterium-exchange reaction between water and hydrogen with the thin-film hydrophobic catalyst

International Nuclear Information System (INIS)

Yamashita, Hisao; Mizumoto, Mamoru; Matsuda, Shimpei

1985-01-01

The deuterium-exchange reaction between water and hydrogen with a hydrophobic catalyst was studied. The hydrophobic catalyst was composed of platinum as an active component and porous poly(tetrafluoroethylene) (PTFE) as a support. The PTFE support was in two forms, i.e., (a) a pellet and (b) a thin-film with the thickness of 50 μm. The primary purpose of the thin film hydrophobic catalyst was to reduce the platinum usage in the reactor. The activity of the catalyst was measured in a trickle bed reactor at atmospheric pressure and temperature of 20 ∼ 70 deg C. It has been found that the employment of the thin-film catalyst reduced the platinum usage to 1/5 of the reactor in the case of using a conventional catalyst. Platinum particles on the thin-film catalyst work efficiently because the reactants were easily diffused to the active sites. It has also been found that the isotopic exchange rate with the thin-film catalyst increased with the increase in the ratio of liquid/gas and increased with the rise of the reaction temperature. It was found from an endurance test that the activity of the thin-film catalyst decreased gradually due to the condensation of water vapor in the catalyst, but was regenarated by heating the catalyst to remove the condensed water. (author)

Real-time kinetic modeling of YSZ thin film roughness deposited by e-beam evaporation technique

International Nuclear Information System (INIS)

Galdikas, A.; Cerapaite-Trusinskiene, R.; Laukaitis, G.; Dudonis, J.

2008-01-01

In the present study, the process of yttrium-stabilized zirconia (YSZ) thin films deposition on optical quartz (SiO 2 ) substrates using e-beam deposition technique controlling electron gun power is analyzed. It was found that electron gun power influences the non-monotonous kinetics of YSZ film surface roughness. The evolution of YSZ thin film surface roughness was analyzed by a kinetic model. The model is based on the rate equations and includes processes of surface diffusion of the adatoms and the clusters, nucleation, growth and coalescence of islands in the case of thin film growth in Volmer-Weber mode. The analysis of the experimental results done by modeling explains non-monotonous kinetics and dependence of the surface roughness on the electron gun power. A good quantitative agreement with experimental results is obtained taking into account the initial roughness of the substrate surface and the amount of the clusters in the flux of evaporated material.

Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

International Nuclear Information System (INIS)

Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

2011-01-01

B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10 -4 Ω cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm 2 /Vs and carrier concentrations on the order of 10 20 cm -3 . All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10 -3 -10 -4 Ω cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

Research on cooling of ultra high critical heat flux with external flow boiling of water. Challenge to achieve ultra high critical heat flux and improvement in estimation of critical heat flux. JAERI's nuclear research promotion program, H11-004 (Contract research)

International Nuclear Information System (INIS)

Monde, Masanori; Mitsutake, Yuichi; Ishida, Kenji; Hino, Ryutaro

2003-03-01

An ultra high critical heat flux (CHF) has been challenged with a highly subcooled water jet impinging on a small rectangular heated surface. Major objective of the study is to achieve an ultra high heat flux cooling as large as 100 MW/m 2 and to establish an accurate estimation method of the CHF. The experiments were carried out over the experimental range; a fixed jet diameter of 2 mm, jet velocity of 5 - 35 m/s, degree of subcooling of 80 - 170 K and system pressure of 0.1 - 1.0 MPa. The rectangular heated surface with a thin nickel foil of 0.03 - 0.3 mm in thickness, 5 and 10 mm in length, and 4 mm in width and heated by a direct current. Effects of thickness of heater wall, jet velocity and subcooling on the CHF were experimentally elucidated. The experimental results show that the CHF decreases about 50% as the heater thickness, namely heat capacity of heater decreases. Characteristics of the CHF with heater length of 10 mm are correlated within ±20% by the generalized correlation of subcooled CHF proposed by the authors. However, the CHF with the shorter heater length of 5 mm shows large deviation of -40% especially at lower subcooling and higher velocity. The maximum CHF of 212 MW/m 2 was achieved at the subcooling of 151 K, the jet velocity of 35 m/s and system pressure of 0.5 MPa. The maximum CHF under atmospheric pressure approaches to 48% of the ultimate maximum heat flux given by the assumptions that vapor molecules leave a liquid-vapor interface at the average speed of a Boltzman-Maxwellian gas and any molecules returning to the interface are not permitted. The ratio of the CHF and ultimate maximum heat flux was considerably enhanced from the existing record of 30%. This study can give the feasibility of ultra high heat flux removal facing in a development of components such as a diverter of a fusion reactor. (author)

Heat transfer and critical heat flux in a spiral flow in an asymmetrical heated tube

International Nuclear Information System (INIS)

Boscary, J.; Association Euratom-CEA, Centre d'Etudes Nucleaires de Cadarache, 13 - Saint-Paul-lez-Durance

1997-03-01

The design of plasma facing components is crucial for plasma performance in next fusion reactors. These elements will be submitted to very high heat flux. They will be actively water-cooled by swirl tubes in the subcooled boiling regime. High heat flux experiments were conducted in order to analyse the heat transfer and to evaluate the critical heat flux. Water-cooled mock-ups were one-side heated by an electron beam gun for different thermal-hydraulic conditions. The critical heat flux was detected by an original method based on the isotherm modification on the heated surface. The wall heat transfer law including forced convection and subcooled boiling regimes was established. Numerical calculations of the material heat transfer conduction allowed the non-homogeneous distribution of the wall temperature and of the wall heat flux to be evaluated. The critical heat flux value was defined as the wall maximum heat flux. A critical heat flux model based on the liquid sublayer dryout under a vapor blanket was established. A good agreement with test results was found. (author)

Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

Phonon and thermal properties of exfoliated TaSe{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yan, Z.; Jiang, C.; Renteria, J. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Salguero, T. T., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States)

2013-11-28

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe{sub 2}) obtained via the “graphene-like” mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E{sub 2g} peak of TaSe{sub 2} presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A{sub 1g} and E{sub 2g}, are −0.013 and −0.0097 cm{sup −1}/{sup o}C, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ∼16 W/mK to ∼9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe{sub 2} channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe{sub 2} and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

Electro-Caloric Properties of BT/PZT Multilayer Thin Films Prepared by Sol-Gel Method.

Science.gov (United States)

Kwon, Min-Su; Lee, Sung-Gap; Kim, Kyeong-Min

2018-09-01

In this study, Barium Titanate (BT)/Lead Zirconate Titanate (PZT) multilayer thin films were fabricated by the spin-coating method on Pt (200 nm)/Ti (10 nm) SiO2 (100 nm)/P-Si (100) substrates using BaTiO3 and Pb(Zr0.90Ti0.10)O3 metal alkoxide solutions. The coating and heating procedure was repeated several times to form the multilayer thin films. All of BT/PZT multilayer thin films show X-ray diffraction patterns typical to a polycrystalline perovskite structure and a uniform and void free grain microstructure. The thickness of the BT and PZT film by one-cycle of drying/sintering was approximately 50 nm and all of the films consisted of fine grains with a flat surface morphology. The electrocaloric properties of BT/PZT thin films were investigated by indirect estimation. The results showed that the temperature change ΔT can be calculated as a function of temperature using Maxwell's relation; the temperature change reaches a maximum value of ~1.85 °C at 135 °C under an applied electric field of 260 kV/cm.

Development of In-plane Thermal Conductivity Calculation Methods in Thin Films

Directory of Open Access Journals (Sweden)

A. A. Barinov

2017-01-01

Full Text Available The future nanoelectronics development involves using the smaller- -and-smaller-sized circuit components based on the micro- and nanostructures. This causes a growth of the specific heat flows up to 100 W/cm2. Since performance of electronic devices is strongly dependent on the temperature there is a challenge to create the heat transfer models, which take into account the size effect and ensure a reliable estimate of the thermal conductivity. This is one of the crucial tasks for development of new generations of integrated circuits.The paper studies heat transfer processes using the silicon thin films as an example. Thermal conductivity calculations are performed taking into account the influence of the classical size effect in the context of the Sondheimer model based on the solution of the Boltzmann transport equation.The paper, for the first time, presents and considers the influence of various factors on the thermal conductivity of thin films, namely temperature, film thickness, polarization of the phonon waves (transverse and longitudinal, velocity and relaxation time versus frequency for the phonons of different wave types.Based on the analysis, three models with different accuracy are created to estimate the influence of detailing processes under consideration on the thermal conductivity in a wide range of temperatures (from 10 K to 450 К and film thickness (from 10 nm to 100 µm.So in the model I for the first time in calculating thermal conductivity of thin films we properly and circumstantially take into account the dependence of the velocity and the relaxation time of phonons on the frequency and polarization. The obtained values are in a good agreement with available experimental data and theoretical models of other authors. In the following models we use few average methods for relaxation times and velocities, which leads to significant reduction in calculating accuracy up to the values exceeding 100%.Therefore, when calculating