WorldWideScience

Sample records for thin-film fuel cells

  1. Low Temperature, High Energy Density Micro Thin Film Solid Oxide Fuel Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A new type of solid oxide fuel cell based on thin film technology and ultra-thin electrolyte is being proposed to develop to realize major reductions in fuel cell...

  2. Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

    DEFF Research Database (Denmark)

    Reolon, R. P.; Sanna, S.; Xu, Yu

    2018-01-01

    A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte...

  3. Micromachined Dense Palladium Electrodes for Thin-film Solid Acid Fuel Cells

    NARCIS (Netherlands)

    Unnikrishnan, S.

    2009-01-01

    This thesis paves the way towards the microfabrication of a solid acid electrolyte based fuel cell (µSAFC), which has a membrane electrode assembly (MEA) consisting of a thin-film of water soluble electrolyte encapsulated between two dense palladium electrode membranes. This project work

  4. Thin Film Catalyst Layers for Direct Methanol Fuel Cells

    Science.gov (United States)

    Witham, C. K.; Chun, W.; Ruiz, R.; Valdez, T. I.; Narayanan, S. R.

    2000-01-01

    One of the primary obstacles to the widespread use of the direct methanol fuel cell (DMFC) is the high cost of the catalyst. Therefore, reducing the catalyst loading well below the current level of 8-12 mg/cm 2 would be important to commercialization. The current methods for preparation of catalyst layers consisting of catalyst, ionomer and sometimes a hydrophobic additive are applied by either painting, spraying, decal transfer or screen printing processes. Sputter deposition is a coating technique widely used in manufacturing and therefore particularly attractive. In this study we have begun to explore sputtering as a method for catalyst deposition. Present experiments focus on Pt-Ru catalyst layers for the anode.

  5. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  6. TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Minh; Kurt Montgomery

    2004-10-01

    This report summarizes the work performed by Hybrid Power Generation Systems, LLC during the Phases I and II under Contract DE-AC26-00NT40705 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Tape Calendering Manufacturing Process For Multilayer Thin-Film Solid Oxide Fuel Cells''. The main objective of this project was to develop the manufacturing process based on tape calendering for multilayer solid oxide fuel cells (SOFC's) using the unitized cell design concept and to demonstrate cell performance under specified operating conditions. Summarized in this report is the development and improvements to multilayer SOFC cells and the unitized cell design. Improvements to the multilayer SOFC cell were made in electrochemical performance, in both the anode and cathode, with cells demonstrating power densities of nearly 0.9 W/cm{sup 2} for 650 C operation and other cell configurations showing greater than 1.0 W/cm{sup 2} at 75% fuel utilization and 800 C. The unitized cell design was matured through design, analysis and development testing to a point that cell operation at greater than 70% fuel utilization was demonstrated at 800 C. The manufacturing process for both the multilayer cell and unitized cell design were assessed and refined, process maps were developed, forming approaches explored, and nondestructive evaluation (NDE) techniques examined.

  7. Fuel cell measurements with cathode catalysts of sputtered Pt3Y thin films.

    Science.gov (United States)

    Lindahl, Niklas; Eriksson, Björn; Grönbeck, Henrik; Wreland Lindström, Rakel; Lindbergh, Göran; Lagergren, Carina; Wickman, Björn

    2018-03-07

    Fuel cells are foreseen to have an important role in sustainable energy systems, provided that catalysts with higher activity and stability are developed. In this work, we deposit highly active sputtered thin films of platinum alloyed with yttrium (Pt3Y) on commercial gas diffusion layers and measure their performance in a proton exchange membrane fuel cell. After acid pretreatment, the alloy is found to have up to 2.5 times higher specific activity than pure platinum. The performance of Pt3Y is much higher than pure Pt, even if all of the alloying element was leached out from parts of the thin metal film on the porous support. This indicates that an even higher performance is expected if the structure of the Pt3Y catalyst or of the support could be further improved. The results show that platinum alloyed with rare earth metals can be used as highly active cathode catalyst material, and significantly reduce the amount of platinum needed, in real fuel cells. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  9. Fabrication of Yttria stabilized zirconia thin films on poroussubstrates for fuel cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Leming, Andres [Univ. of California, Berkeley, CA (United States)

    2003-06-16

    A process for the deposition of yttria stabilized zirconia (YSZ) films, on porous substrates, has been developed. These films have possible applications as electrolyte membranes in fuel cells. The films were deposited from colloidal suspensions through the vacuum infiltration technique. Films were deposited on both fully sintered and partially sintered substrates. A critical cracking thickness for the films was identified and strategies are presented to overcome this barrier. Green film density was also examined, and a method for improving green density by changing suspension pH and surfactant was developed. A dependence of film density on film thickness was observed, and materials interactions are suggested as a possible cause. Non-shorted YSZ films were obtained on co-fired substrates, and a cathode supported solid oxide fuel cell was constructed and characterized.

  10. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  11. On the Preparation and Testing of Fuel Cell Catalysts Using the Thin Film Rotating Disk Electrode Method.

    Science.gov (United States)

    Inaba, Masanori; Quinson, Jonathan; Bucher, Jan Rudolf; Arenz, Matthias

    2018-03-16

    We present a step-by-step tutorial to prepare proton exchange membrane fuel cell (PEMFC) catalysts, consisting of Pt nanoparticles (NPs) supported on a high surface area carbon, and to test their performance in thin film rotating disk electrode (TF-RDE) measurements. The TF-RDE methodology is widely used for catalyst screening; nevertheless, the measured performance sometimes considerably differs among research groups. These uncertainties impede the advancement of new catalyst materials and, consequently, several authors discussed possible best practice methods and the importance of benchmarking. The visual tutorial highlights possible pitfalls in the TF-RDE testing of Pt/C catalysts. A synthesis and testing protocol to assess standard Pt/C catalysts is introduced that can be used together with polycrystalline Pt disks as benchmark catalysts. In particular, this study highlights how the properties of the catalyst film on the glassy carbon (GC) electrode influence the measured performance in TF-RDE testing. To obtain thin, homogeneous catalyst films, not only the catalyst preparation, but also the ink deposition and drying procedures are essential. It is demonstrated that an adjustment of the ink's pH might be necessary, and how simple control measurements can be used to check film quality. Once reproducible TF-RDE measurements are obtained, determining the Pt loading on the catalyst support (expressed as Pt wt%) and the electrochemical surface area is necessary to normalize the determined reaction rates to either surface area or Pt mass. For the surface area determination, so-called CO stripping, or the determination of the hydrogen underpotential deposition (Hupd) charge, are standard. For the determination of the Pt loading, a straightforward and cheap procedure using digestion in aqua regia with subsequent conversion of Pt(IV) to Pt(II) and UV-vis measurements is introduced.

  12. Surface composition of magnetron sputtered Pt-Co thin film catalyst for proton exchange membrane fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Khalakhan, Ivan; Václavů, Michal [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Kovács, Gábor; Kozlov, Sergey M. [Departament de Química Física and Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, c/ Martí i Franquès 1, 08028 Barcelona (Spain); Kúš, Peter; Skála, Tomáš; Tsud, Natalia; Lavková, Jaroslava [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Potin, Valerie [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université Bourgogne, 9 Av. A. Savary, BP 47870, F-21078 Dijon Cedex (France); and others

    2016-03-01

    Graphical abstract: - Highlights: • Nanostructured Pt-Co thin catalyst films were grown on carbon by magnetron sputtering. • The surface composition of the nanostructured Pt-Co films was investigated by surface analysis techniques. • We carried out modeling of Pt-Co nanoalloys by computational methods. • Both experiment and modeling based on density functional theory showed that the surface of Pt-Co nanoparticles is almost exclusively composed of Pt atoms. - Abstract: Recently we have tested a magnetron sputtered Pt-Co catalyst in a hydrogen-fed proton exchange membrane fuel cell and showed its high catalytic activity for the oxygen reduction reaction. Here we present further investigation of the magnetron sputtered Pt-Co thin film catalyst by both experimental and theoretical methods. Scanning electron microscopy and transmission electron microscopy experiments confirmed the nanostructured character of the catalyst. The surface composition of as-deposited and annealed at 773 K Pt-Co films was investigated by surface analysis techniques, such as synchrotron radiation photoelectron spectroscopy and X-ray photoelectron spectroscopy. Modeling based on density functional theory showed that the surface of 6 nm large 1:1 Pt-Co nanoparticles is almost exclusively composed of Pt atoms (>90%) at typical operation conditions and the Co content does not exceed 20% at 773 K, in agreement with the experimental characterization of such films annealed in vacuum. According to experiment, the density of valence states of surface atoms in Pt-Co nanostructures is shifted by 0.3 eV to higher energies, which can be associated with their higher activity in the oxygen reduction reaction. The changes in electronic structure caused by alloying are also reflected in the measured Pt 4f, Co 3p and Co 2p photoelectron peak binding energies.

  13. Synthesis and characterization of electrolyte-grade 10%Gd-doped ceria thin film/ceramic substrate structures for solid oxide fuel cells

    DEFF Research Database (Denmark)

    Chourashiya, M. G.; Bharadwaj, S. R.; Jadhav, L. D.

    2010-01-01

    In the present research, spray pyrolysis technique is employed to synthesize 10%Gd-doped ceria (GDC) thin films on ceramic substrates with an intention to use the "film/substrate" structure in solid oxide fuel cells. GDC films deposited on GDC substrate showed enhanced crystallite formation....... In case of NiO-GDC composite substrate, the thickness of film was higher (∼ 13 μm) as compared to the film thickness on GDC substrate (∼ 2 μm). The relative density of the films deposited on both the substrates was of the order of 95%. The impedance measurements revealed that ionic conductivity of GDC...

  14. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  15. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution in the infr......Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... characterized. Spectral responses are measured and in two types of measured GaAs solar cells (with Au and Ag nanoparticles) there was no clear efficiency enhancement in the NIR spectral range. In the case of Au nanoparticles it could be explained in similar way to the absorption data: the effect being broad...... cells spectral response to longer wavelengths, through possibly cheap and simple technologies: EBL can be substituted by colloidal solutions implementation and electroless plating is not expensive and results to be effective within a broad set of parameters (size, shape, density). Another application...

  16. Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

    KAUST Repository

    la O', Gerardo Jose

    2010-06-22

    Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

  17. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Final Technical Report (October 2000 - December 2003)

    International Nuclear Information System (INIS)

    Jie Guan; Nguyen Minh

    2003-01-01

    This report summarizes the results of the work conducted under the program: ''Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells'' under contract number DE-AC26-00NT40711. The program goal is to advance materials and processes that can be used to produce economical, high-performance solid oxide fuel cells (SOFC) capable of achieving extraordinary high power densities at reduced temperatures. Under this program, anode-supported thin electrolyte based on lanthanum gallate (LSMGF) has been developed using tape-calendering process. The fabrication parameters such as raw materials characteristics, tape formulations and sintering conditions have been evaluated. Dense anode supported LSGMF electrolytes with thickness range of 10-50 micron have been fabricated. High performance cathode based on Sr 0.5 Sm 0.5 CoO 3 (SSC) has been developed. Polarization of ∼0.23 ohm-cm 2 has been achieved at 600 C with Sr 0.5 Sm 0.5 CoO 3 cathode. The high-performance SSC cathode and thin gallate electrolyte have been integrated into single cells and cell performance has been characterized. Tested cells to date generally showed low performance because of low cell OCVs and material interactions between NiO in the anode and lanthanum gallate electrolyte

  18. Silver Nanoparticle Enhanced Freestanding Thin-Film Silicon Solar Cells

    Science.gov (United States)

    Winans, Joshua David

    As the supply of fossil fuels diminishes in quantity the demand for alternative energy sources will consistently increase. Solar cells are an environmentally friendly and proven technology that suffer in sales due to a large upfront cost. In order to help facilitate the transition from fossil fuels to photovoltaics, module costs must be reduced to prices well below $1/Watt. Thin-film solar cells are more affordable because of the reduced materials costs, but lower in efficiency because less light is absorbed before passing through the cell. Silver nanoparticles placed at the front surface of the solar cell absorb and reradiate the energy of the light in ways such that more of the light ends being captured by the silicon. Silver nanoparticles can do this because they have free electron clouds that can take on the energy of an incident photon through collective action. This bulk action of the electrons is called a plasmon. This work begins by discussing the economics driving the need for reduced material use, and the pros and cons of taking this step. Next, the fundamental theory of light-matter interaction is briefly described followed by an introduction to the study of plasmonics. Following that we discuss a traditional method of silver nanoparticle formation and the initial experimental studies of their effects on the ability of thin-film silicon to absorb light. Then, Finite-Difference Time-Domain simulation software is used to simulate the effects of nanoparticle morphology and size on the scattering of light at the surface of the thin-film.

  19. Porous La0.6Sr0.4CoO3-δ thin film cathodes for large area micro solid oxide fuel cell power generators

    DEFF Research Database (Denmark)

    Garbayo, A.; Esposito, Vincenzo; Sanna, Simone

    2014-01-01

    Porous La0.6Sr0.4CoO3-δ thin films were fabricated by pulsed laser deposition for being used as a cathode for micro solid oxide fuel cell applications as MEMS power generators. Symmetrical La0.6Sr0.4CoO3-δ/ yttria-stabilized zirconia/La0.6Sr0.4CoO3-δ free-standing membranes were fabricated using...... silicon as a substrate. A novel large-area membrane design based on grids of doped-silicon slabs was used. Thermomechanical stability of the tri-layer membranes was ensured in the intermediate range of temperatures up to 700 °C. In-plane conductivity of ca. 300 S cm-1 was measured for the cathode within...... the whole range of application temperatures. Finally, area specific resistance values below 0.3 Ω cm2 were measured for the cathode/electrolyte bi-layer at 700 °C in the exact final micro solid oxide fuel cell device configuration, thus presenting La0.6Sr0.4CoO3-δ as a good alternative for fabricating...

  20. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  1. Development of advanced catalytic layer based on vertically aligned conductive polymer arrays for thin-film fuel cell electrodes

    Science.gov (United States)

    Jiang, Shangfeng; Yi, Baolian; Cao, Longsheng; Song, Wei; Zhao, Qing; Yu, Hongmei; Shao, Zhigang

    2016-10-01

    The degradation of carbon supports significantly influences the performance of proton exchange membrane fuel cells (PEMFCs), particularly in the cathode, which must be overcome for the wide application of fuel cells. In this study, advanced catalytic layer with electronic conductive polymer-polypyrrole (PPy) nanowire as ordered catalyst supports for PEMFCs is prepared. A platinum-palladium (PtPd) catalyst thin layer with whiskerette shapes forms along the long axis of the PPy nanowires. The resulting arrays are hot-pressed on both sides of a Nafion® membrane to construct a membrane electrode assembly (without additional ionomer). The ordered thin catalyst layer (approximately 1.1 μm) is applied in a single cell as the anode and the cathode without additional Nafion® ionomer. The single cell yields a maximum performance of 762.1 mW cm-2 with a low Pt loading (0.241 mg Pt cm-2, anode + cathode). The advanced catalyst layer indicates better mass transfer in high current density than that of commercial Pt/C-based electrode. The mass activity is 1.08-fold greater than that of DOE 2017 target. Thus, the as-prepared electrodes have the potential for application in fuel cells.

  2. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  3. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  4. Degradation of dye wastewater with a photoelectric integration process (MPEC): Microbial fuel cells-assisted dual electrodes thin-film photoelectrocatalytic.

    Science.gov (United States)

    Zhong, Deng J; Xu, Yun L; Hu, Xue B; Li, Jue X; Jia, Jin P

    2018-02-23

    A novel photoelectric integration process (MPEC) was developed to degrade Amaranth. In the MPEC, the output voltage of the microbial fuel cells (MFCs) was used to assist the dual slant-placed electrodes thin-film photocatalytic (PC). With two MFCs connected in series, the MPEC process realized the highest decolorization efficiency. It is close to that of the external bias photoelectrocatalytic (PEC), and 7% higher than that of the self-generated electric field-assisted photoelectrocatalytic (SPEC). The feasibility of MPEC pre-treatment and MFC post-treatment of Amaranth was investigated. The results demonstrated that MPEC pre-treatment of Amaranth could improve its biodegradability. The higher MPEC decolorization efficiency indicated the stronger biodegradability of the obtained intermediates and the higher MFC output voltage. When the MPEC decolorization efficiency was gradually increased to 50%, the removal efficiencies of total Chemical Oxygen Demand (COD) by the MPEC and MFC increased; when the decolorization efficiency was increased above 50%, the removal efficiencies became stable. MPEC enhanced the biodegradability efficiently and was applicable to pre-treat textile wastewater.

  5. Performance evaluation of solid oxide fuel cells with thin film electrolyte fabricated by binder-assisted slurry casting

    Energy Technology Data Exchange (ETDEWEB)

    Guo, W.M.; Liu, X.M.; Li, L.J. [Department of Biological and Chemical Engineering, Guangxi University of Technology, Liuzhou 545006 (China); Xiao, Y.F. [Department of Stomatology, Liuzhou Maternity and Child Health Hospital, Liuzhou 545001 (China); Chen, Y. [School of Yingdong Life Science, Shaoguan University, Shaoguan 512005 (China)

    2011-10-15

    A gas-tight yttria-stabilized zirconia (YSZ) electrolyte film was fabricated on porous NiO-YSZ anode substrates by a binder-assisted slurry casting technique. The scanning electron microscope (SEM) results showed that the YSZ film was relatively dense with a thickness of 10 {mu}m. La{sub 0.8}Sr{sub 0.2}MnO{sub 3} (LSM)-YSZ was applied to cathode using a screen-print technique and the single fuel cells were tested in a temperature range from 600 to 800 C. An open circuit voltage (OCV) of over 1.0 V was observed. The maximum power densities at 600, 700, and 800 C were 0.13, 0.44, and 1.1 W cm{sup -2}, respectively. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building -integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  7. Potential of thin-film solar cell module technology

    Science.gov (United States)

    Shimada, K.; Ferber, R. R.; Costogue, E. N.

    1985-01-01

    During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

  8. Thin Film Solar Cells and their Optical Properties

    Directory of Open Access Journals (Sweden)

    Stanislav Jurecka

    2006-01-01

    Full Text Available In this work we report on the optical parameters of the semiconductor thin film for solar cell applications determination. The method is based on the dynamical modeling of the spectral reflectance function combined with the stochastic optimization of the initial reflectance model estimation. The spectral dependency of the thin film optical parameters computations is based on the optical transitions modeling. The combination of the dynamical modeling and the stochastic optimization of the initial theoretical model estimation enable comfortable analysis of the spectral dependencies of the optical parameters and incorporation of the microstructure effects on the solar cell properties. The results of the optical parameters ofthe i-a-Si thin film determination are presented.

  9. CZTS nanoparticle absorber layer for thin film solar cells

    DEFF Research Database (Denmark)

    Symonowicz, Joanna; Jensen, Kirsten M. Ørnsbjerg; Engberg, Sara Lena Josefin

    Cu2ZnSnS4 (CZTS) thin film solar cells have the potential to revolutionize the solar energy market. They are cheap, non-toxic and present an efficiency up to 9,2% [1]. However, to commercialize CZTS nanoparticle thin films, the efficiency issues must yet be resolved. There are various fabrication...... is furthermore characterized. Photoluminescence measurements indicate which absorber layer are of higher efficiency, which allows us to study why some crystalline configurations enhance the efficiency of resulting solar cells....

  10. Development of A Thin Film Crystalline Silicon Solar Cell

    International Nuclear Information System (INIS)

    Sopori, B.; Chen, W.; Zhang, Y.

    1998-01-01

    A new design for a single junction, thin film Si solar cell is presented. The cell design is compatible with low-temperature processing required for the use of a low-cost glass substrate, and includes effective light trapping and impurity gettering. Elements of essential process steps are discussed

  11. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  12. Light management in thin-film silicon solar cells

    NARCIS (Netherlands)

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved

  13. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  14. Light trapping effects in thin film silicon solar cells

    OpenAIRE

    Haug, FJ; Söderström, T; Dominé, D; Ballif, C

    2009-01-01

    We present advanced light trapping concepts for thin film silicon solar cells. When an amorphous and a microcrystalline absorber layers are combined into a micromorph tandem cell, light trapping becomes a challenge because it should combine the spectral region from 600 to 750 nm for the amorphous top cell and from 800 to 1100 for the microcrystalline bottom cell. Because light trapping is typically achieved by growing on textured substrates, the effect of interface textures on the material an...

  15. Molecular solution processing of metal chalcogenide thin film solar cells

    Science.gov (United States)

    Yang, Wenbing

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum

  16. Polymer Substrates For Lightweight, Thin-Film Solar Cells

    Science.gov (United States)

    Lewis, Carol R.

    1993-01-01

    Substrates survive high deposition temperatures. High-temperature-resistant polymers candidate materials for use as substrates of lightweight, flexible, radiation-resistant solar photovoltaic cells. According to proposal, thin films of copper indium diselenide or cadmium telluride deposited on substrates to serve as active semiconductor layers of cells, parts of photovoltaic power arrays having exceptionally high power-to-weight ratios. Flexibility of cells exploited to make arrays rolled up for storage.

  17. Low cost thin film poly-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report presents the results of a project to design and develop a high density plasma based thin-film poly-silicon (TFPS) deposition system based on PQL proprietary advanced plasma technology to produce semiconductor quality TFPS for fabricating a TFPS solar cell. Details are given of the TFPS deposition system, the material development programme, solar cell structure, and cell efficiencies. The reproducibility of the deposition process and prospects for commercial exploitation are discussed.

  18. Large Area Thin Film Silicon: Synergy between Displays and Solar Cells

    NARCIS (Netherlands)

    Schropp, R.E.I.

    2012-01-01

    Thin-film silicon technology has changed our society, owing to the rapid advance of its two major application fields in communication (thin-film displays) and sustainable energy (thin-film solar cells). Throughout its development, advances in these application fields have always benefitted each

  19. Laser scribing integration of polycrystalline thin film solar cells

    Science.gov (United States)

    Sozzi, Michele; Manilia, Filomena; Antezza, Roberto; Catellani, Cristina; Candiani, Alessandro; Coscelli, Enrico; Cucinotta, Annamaria; Selleri, Stefano; Menossi, Daniele; Bosio, Alessio

    2013-03-01

    The growing demand for high productivity in the thin-film photovoltaic module industry, together with the request for more and more efficient devices, needs high-performance laser-scribing. The results of scribing tests on CdTe and CIGS solar cells samples are here presented. A comparison between the scribes obtained with ns regime fiber lasers, and a ps regime diode pumped solid state laser will be also reported.

  20. Interfacial Properties of CZTS Thin Film Solar Cell

    Directory of Open Access Journals (Sweden)

    N. Muhunthan

    2014-01-01

    Full Text Available Cu-deficient CZTS (copper zinc tin sulfide thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, UV-Vis spectroscopy, and Hall effect measurement. A CZTS solar cell device having conversion efficiency of ~0.11% has been made by depositing CdS, ZnO, ITO, and Al layers over the CZTS thin film deposited on Mo coated soda lime glass. The series resistance of the device was very high. The interfacial properties of device were characterized by cross-sectional SEM and cross-sectional HRTEM.

  1. Photon upconversion for thin film solar cells

    NARCIS (Netherlands)

    de Wild, J.

    2012-01-01

    In this research one of the many possible methods to increase the efficiency of solar cells is described. The method investigated is based on adapting the solar light in such a way that the solar cell can convert more light into electricity. The part of the solar spectrum that is adapted is the part

  2. High power impulse magnetron sputtering of CIGS thin films for high efficiency thin film solar cells

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Kohout, Michal; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    2014-01-01

    Roč. 1, č. 3 (2014), s. 135-137 ISSN 2336-2626 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HiPIMS * emission spectroscopy * thin films * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics http://fyzika.feld.cvut.cz/misc/ppt/articles/2014/olejnicek.pdf

  3. Thin-film polycrystalline silicon solar cells

    Science.gov (United States)

    Funghnan, B. W.; Blanc, J.; Phillips, W.; Redfield, D.

    1980-08-01

    Thirty-four new solar cells were fabricated on Wacker Sislo substrates and the AM-1 parameters were measured. A detailed comparison was made between the measurement of minority carrier diffusion length by the OE method and the penetrating light laser scan grain boundary photoresponse linewidth method. The laser scan method has more experimental uncertainty and agrees within 10 to 50% with the QE method. It allows determination of L over a large area. Atomic hydrogen passivation studies continued on Wacker material by three techniques. A method of determining surface recombination velocity, s, from laser scan data was developed. No change in s in completed solar cells after H-plasma treatment was observed within experimental error. H-passivation of bare silicon cars as measured by the new laser scan photoconductivity technique showed very large effects.

  4. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  5. Development of CIGS2 thin film solar cells

    International Nuclear Information System (INIS)

    Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

    2005-01-01

    Research and development of CuIn 1-x Ga x Se 2-y S y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO 2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H 2 S. Presently large (15 cm x 10 cm) CuIn 1-x Ga x S 2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H 2 S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication

  6. Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

    CERN Document Server

    Kodigala, Subba Ramaiah

    2013-01-01

    The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

  7. II-IV-V Based Thin Film Tandem Photovoltaic Cell

    Energy Technology Data Exchange (ETDEWEB)

    Newman, Nathan [Arizona State Univ., Mesa, AZ (United States); van Schilfgaarde, Mark [Arizona State Univ., Mesa, AZ (United States)

    2012-10-04

    [Through a combination of theory and experiment that, absent unknown mitigating factors, a tandem cell whose (wide-gap. 1.8 eV) top layer is made of ZnSnP2 and whose (narrow gap, 1.1 eV) bottom layer consisting of ZnGeAs2 are near-ideal materials for a tandem cell. Not only are there gaps optimally adjusted to the solar spectrum, but the two compounds are lattice-matched, and their energy band structure and optical absorption are also near-ideal (they closely resemble that of GaAs). Our first major challenge is to establish that high-quality II-IV-V thin films can be synthesized. We have begun growing and characterizing films of ZnGeAs2 and ZnSnP2, initially grown on Ge substrates (the lattice constant of Ge matches these compounds) by pulsed laser ablation and sputtering. In tandem are theoretical calculations to guide the experiments. The goal is to develop methods that can be used to produce a pair of lattice-matched thin films that will be useful in tandem cells.

  8. Thin film cadmium telluride and zinc phosphide solar cells

    Science.gov (United States)

    Chu, T.

    1984-10-01

    The deposition of cadmium telluride films by direct combination of the cadmium and tellurium vapor on foreign substrates is described. Nearly stoichiometric p-type cadmium telluride films and arsenic-doped p-type films were prepared reproducibly. Major efforts were directed to the deposition and characterization of heterojunction window materials, indium tin oxide, fluorine-doped tin oxide, cadmium oxide, and zinc oxide. A number of heterojunction solar cells were prepared, and the best thin-film ITO/CdTe solar cells had an AMI efficiency of about 7.2%. Zinc phosphide films were deposited on W/steel substrated by the reaction of zinc and phosphine in a hydrogen flow. Films without intentional doping had an electrical resistivity on the order of 10(6) ohm-cm, and this resistivity may be reduced to about 5 x 10(4) ohm-cm by adding hydrogen chloride or hydrogen bromide to the reaction mixture. Lower resistivity films are deposited by adding a controlled amount of silver nitrate solution on to the substrate surface. Major efforts are directed to the deposition of low-resistivity zinc selenide to prepare ZnSe/An3P2 heterojunction thin-film solar cells. The zinc selenide films deposited by vaccum evaporation and chemical vapor deposition techniques are all of high resistivity.

  9. Laser structuring of thin-film solar cells on polymers

    Science.gov (United States)

    Gečys, P.; Račiukaitis, G.; Gedvilas, M.; Selskis, A.

    2009-04-01

    A permanent growth of the thin-film electronics market stimulates the development of versatile technologies for patterning thin-film materials on flexible substrates. High repetition rate lasers with a short pulse duration offer new possibilities for high efficiency structuring of conducting, semi-conducting and isolating films. Lasers with the picosecond pulse duration were applied in structuring the complex multilayered Cu(InGa)Se{2} (CIGS) solar cells deposited on the polyimide substrate. The wavelength of laser radiation was adjusted depending on optical properties both of the film and the substrate. A narrow processing window of laser fluence and pulse overlap was estimated with both 1064 nm and 355 nm irradiation to remove the molybdenum backcontact off the substrate. The selective removal of ITO, ZnO and CIGS layers was achieved with 355 nm irradiation in the multilayer structure of CIGS without significant damage to the underneath layers. Use of the flat-top laser beam profile should prevent inhomogeneity in ablation. The EDS analysis did not show residues of molybdenum projected onto the walls of ablated channel due to melt extrusion. Processing with picosecond lasers should not cause degradation of photo-electrical properties of the solar cells but verification is required.

  10. Circuit analysis method for thin-film solar cell modules

    Science.gov (United States)

    Burger, D. R.

    1985-01-01

    The design of a thin-film solar cell module is dependent on the probability of occurrence of pinhole shunt defects. Using known or assumed defect density data, dichotomous population statistics can be used to calculate the number of defects expected in a module. Probability theory is then used to assign the defective cells to individual strings in a selected series-parallel circuit design. Iterative numerical calculation is used to calcuate I-V curves using cell test values or assumed defective cell values as inputs. Good and shunted cell I-V curves are added to determine the module output power and I-V curve. Different levels of shunt resistance can be selected to model different defect levels.

  11. Characterization of Thin Films for Polymer Solar Cells

    DEFF Research Database (Denmark)

    Tromholt, Thomas

    of solar cells with low embedded time, material, and energy consumption as compared to silicon solar cells. Consequently, different demonstration products of small mobile gadgets based on polymer solar cells have been produced, which are fully competitive with conventional energy technologies, illustrating...... time of the cell is highly increased. An alternative approach is to increase the photo stability of the cell components, and especially the light absorbing conjugated polymer has been subject to extensive attention. The photo stability of conjugated polymers varies by orders of magnitude from type...... to type depending on the chemical structure of the material and consequently, the lifetime is highly influenced by the polymer stability. Photochemical degradation of polymers, i.e. degradation of thin films of polymer in the ambient under light exposure, is a technique normally applied to evaluate...

  12. Design and Optimization of Copper Indium Gallium Selenide Thin Film Solar Cells

    Science.gov (United States)

    2015-09-01

    OPTIMIZATION OF COPPER INDIUM GALLIUM SELENIDE THIN FILM SOLAR CELLS by Daniel B. Katzman September 2015 Thesis Advisor: Sherif Michael Second...for public release; distribution is unlimited DESIGN AND OPTIMIZATION OF COPPER INDIUM GALLIUM SELENIDE THIN FILM SOLAR CELLS Daniel B...7 A. SOLAR CELL PHYSICS

  13. Thin-film GaAs epitaxial life-off solar cells for space applications

    NARCIS (Netherlands)

    Schermer, J.J.; Mulder, P.; Bauhuis, G.J.; Larsen, P.K.; Oomen, G.; Bongers, E.

    2005-01-01

    In the present work the space compatibility of thin-film GaAs solar cells is studied. These cells are separated from their GaAs substrate by the epitaxial lift-off (ELO) technique and mounted behind a CMG cover glass which at the same time serves as a stable carrier for the thin film cells. In the

  14. Characterization of thin-film silicon materials and solar cells through numerical modeling

    NARCIS (Netherlands)

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film

  15. High efficiency thin-film solar cells for space applications: challenges and opportunities

    NARCIS (Netherlands)

    Leest, R.H. van

    2017-01-01

    In theory high efficiency thin-film III-V solar cells obtained by the epitaxial lift-off (ELO) technique offer excellent characteristics for application in space solar panels. The thesis describes several studies that investigate the space compatibility of the thin-film solar cell design developed

  16. Commercial Development Of Ovonic Thin Film Solar Cells

    Science.gov (United States)

    Ovshinsky, Stanford R.

    1983-09-01

    subsequent paper) which has clearly demonstrated that the basic barrier to low-cost production has been broken through and that one can now speak realistically of delivering power directly from the sun for under a dollar per peak watt merely by making larger versions of this basic continuous web, large-area thin-film machine. We have made one square foot amorphous silicon alloy PIN devices with conversion efficiencies in the range of 7%, and in the laboratory, we have reported smaller area PIN de-vices in the 10% conversion efficiency range. In addition, much higher energy conversion efficiencies can be obtained within the same process by using multi-cell layered or tandem thin-film solar cell structures (see Figure 1). These devices exhibit enhanced efficiency by utilizing a wider range of the solar spectrum. Since the theoretical maximum efficiency for multi-cell structures is over 60%, one can certainly realistically anticipate the pro-duction of thin-film amorphous photovoltaic devices with efficiencies as high as 30%. Our production device is already a two-cell tandem, as we have solved not only the problems of interfacing the individual cell components but also the difficulties associated with a one foot square format deposited on a continuous web. Figure 2 shows a continuous roll of Ovonic solar cells. Realistic calculations for a three-cell tandem thin-film device using amorphous semiconductor alloys with 1.8eV, 1.5eV, and 1.0eV optical band gaps indicate that solar energy conversion efficiencies of 20-30% can be achieved.

  17. Thin-film CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    Tyan, Y.S.; Perez-Albuerne, E.A.

    1985-01-01

    A thin-film solar cell with the configuration soda-lime glass ITO/CdS/CdTe/Au was reported earlier to have more than 10% conversion efficiency. To further improve the low-cost potential of the device, an SnO/sub 2/ layer was developed to replace ITO, and a new contact to CdTe using Ni or stainless steel to replace Au. The contact also improves the stability of the device. A low-cost method for monolithic integration of these cells to make a module is discussed. By this method, a module of 32 cm/sup 2/ area and 8.5% efficiency was fabricated. A simple and effective ''cross-cut'' method for minimizing the effects of shorting defects is also described

  18. Boron-doped nanocrystalline silicon thin films for solar cells

    International Nuclear Information System (INIS)

    Fathi, E.; Vygranenko, Y.; Vieira, M.; Sazonov, A.

    2011-01-01

    This article reports on the structural, electronic, and optical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films. The films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at a substrate temperature of 150 deg. C. Crystalline volume fraction and dark conductivity of the films were determined as a function of trimethylboron-to-silane flow ratio. Optical constants of doped and undoped nc-Si:H were obtained from transmission and reflection spectra. By employing p + nc-Si:H as a window layer combined with a p' a-SiC buffer layer, a-Si:H-based p-p'-i-n solar cells on ZnO:Al-coated glass substrates were fabricated. Device characteristics were obtained from current-voltage and spectral-response measurements.

  19. Transparent electrode requirements for thin film solar cell modules

    KAUST Repository

    Rowell, Michael W.

    2011-01-01

    The transparent conductor (TC) layer in thin film solar cell modules has a significant impact on the power conversion efficiency. Reflection, absorption, resistive losses and lost active area either from the scribed interconnect region in monolithically integrated modules or from the shadow losses of a metal grid in standard modules typically reduce the efficiency by 10-25%. Here, we perform calculations to show that a competitive TC must have a transparency of at least 90% at a sheet resistance of less than 10 Ω/sq (conductivity/absorptivity ≥ 1 Ω -1) for monolithically integrated modules. For standard modules, losses are much lower and the performance of alternative lower cost TC materials may already be sufficient to replace conducting oxides in this geometry. © 2011 The Royal Society of Chemistry.

  20. Analysis of Electrical Characteristics of Thin Film Photovoltaic Cells

    Science.gov (United States)

    Kasick, Michael P.

    2004-01-01

    Solar energy is the most abundant form of energy in many terrestrial and extraterrestrial environments. Often in extraterrestrial environments sunlight is the only readily available form of energy. Thus the ability to efficiently harness solar energy is one of the ultimate goals in the design of space power systems. The essential component that converts solar energy into electrical energy in a solar energy based power system is the photovoltaic cell. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While silicon is a well understood technology and yields high efficiency, there are inherent disadvantages to using single crystal materials. The requirements of weight, large planar surfaces, and high manufacturing costs make large silicon cells prohibitively expensive for use in certain applications. Because of silicon s disadvantages, there is considerable ongoing research into alternative photovoltaic technologies. In particular, thin film photovoltaic technologies exhibit a promising future in space power systems. While they are less mature than silicon, the better radiation hardness, reduced weight, ease of manufacturing, low material cost, and the ability to use virtually any exposed surface as a substrate makes thin film technologies very attractive for space applications. The research group lead by Dr. Hepp has spent several years researching copper indium disulfide as an absorber material for use in thin film photovoltaic cells. While the group has succeeded in developing a single source precursor for CuInS2 as well as a unique method of aerosol assisted chemical vapor deposition, the resulting cells have not achieved adequate efficiencies. While efficiencies of 11 % have been demonstrated with CuInS2 based cells, the cells produced by this group have shown efficiencies of approximately 1 %. Thus, current research efforts are turning towards the analysis of the individual layers of these cells, as well as the junctions between

  1. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    Science.gov (United States)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  2. Enhanced stability of solid oxide fuel cells by employing a modified cathode-interlayer interface with a dense La0.6Sr0.4Co0.2Fe0.8O3-δ thin film

    Science.gov (United States)

    De Vero, Jeffrey C.; Develos-Bagarinao, Katherine; Kishimoto, Haruo; Ishiyama, Tomohiro; Yamaji, Katsuhiko; Horita, Teruhisa; Yokokawa, Harumi

    2018-02-01

    In La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) cathode/Gd-doped ceria (GDC)/yttria-stabilized zirconia (YSZ)-electrolyte based solid oxide fuel cells (SOFCs), one of the key issues affecting performance and long-term stability is the apparent deactivation of LSCF cathode by the presence of secondary phases such as SrZrO3 at the interfaces. Herein, we report that by modifying the cathode-interlayer interface with a dense LSCF thin film, the severe cation interdiffusion is suppressed especially the fast gas or surface diffusion of Sr into adjacent GDC-interlayer/YSZ-electrolyte resulting in the significant reduction of SrZrO3 formation at the interfaces improving cell stability. In order to understand the present results, the interface chemistry is carefully considered and discussed. The results show that modification of cathode-interlayer interfaces is an important strategy for improving the lifetime of SOFCs.

  3. Invited Paper: CIGS-based thin film solar cells and modules: Unique material properties

    Science.gov (United States)

    Nakada, Tokio

    2012-04-01

    Although CIGS solar cells consist of a polycrystalline thin film grown on a glass substrate, more than 20% conversion efficiency has been achieved. The efficiency has reached the same level as polycrystalline silicon solar cells. This high efficiency has not yet been observed in other thin film solar cells including thin film Si and CdTe. Therefore, it is important to understand the mechanisms that allow CIGS solar cells to exhibit high conversion efficiencies. This paper discusses the origin of the high efficiency and demonstrates that it is caused by the unique material properties of CIGS films.

  4. High-efficient n-i-p thin-film silicon solar cells

    NARCIS (Netherlands)

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a ?c-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar

  5. Charge carrier dynamics in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  6. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  7. Time Domain Characterization of Light Trapping States in Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Pfeiffer W.

    2013-03-01

    Full Text Available Spectral interferometry of the backscattered radiation reveals coherence lifetimes of about 150 fs for nanolocalized electromagnetic modes in textured layered nanostructures as they are commonly used in thin film photovoltaics to achieve high cell efficiencies.

  8. Surface Engineering of ZnO Thin Film for High Efficiency Planar Perovskite Solar Cells

    Science.gov (United States)

    Tseng, Zong-Liang; Chiang, Chien-Hung; Wu, Chun-Guey

    2015-09-01

    Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic properties (band structure) of the resulting ZnO thin film and therefore the photovoltaic performance of the corresponding perovskite solar cell. Precise surface engineering of ZnO thin film was found to be one of the key steps to fabricate ZnO based regular planar perovskite solar cell with high power conversion efficiency. Sputtering method is proved to be one of the excellent techniques to prepare ZnO thin film with controllable properties.

  9. XRD total scattering of the CZTS nanoparticle absorber layer for the thin film solar cells

    DEFF Research Database (Denmark)

    Symonowicz, Joanna; Jensen, Kirsten M. Ø.; Engberg, Sara Lena Josefin

    to revolutionize the solar energy market. However, to commercialize CZTS nanoparticle thin films, the efficiency issues must yet be resolved. In order to do so, it is vital to understand in detail their nanoscale atomic structure. CZTS crystallize in the kesterite structure, where Cu and Zn is distributed between......Cu2ZnSnS4 (CZTS) thin film solar cells are cheap, non-toxic and present an efficiency up to 9,2% [1]. They can be easily manufactured by the deposition of the nanoparticle ink as a thin film followed by a thermal treatment to obtain large grains [2]. Therefore, CZTS has the potential...

  10. Thin Film Photovoltaic Cells on Flexible Substrates Integrated with Energy Storage

    Science.gov (United States)

    2011-11-30

    Synthesis of CZTS thin films using TBDS as a sulfur source Thin film solar cells based on Cu(In,Ga)(S,Se)2 and CdTe have demonstrated significant...efficient ones at the laboratory level and have demonstrated efficincies in the range of-20% [3]. However, both CIGS and CdTe based thin film solar... modules . References [1] R. Liu, J. Duay, S.B. Lee, ACS Nano, 4 (2010) 4299-4307. [2] A.L.M. Reddy, M.M. Shaijumon, S.R. Gowda, P.M. Ajayan Summary

  11. Epitaxial thin films

    Science.gov (United States)

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  12. Nano-photonic Light Trapping In Thin Film Solar Cells

    Science.gov (United States)

    Callahan, Dennis M., Jr.

    Over the last several decades there have been significant advances in the study and understanding of light behavior in nanoscale geometries. Entire fields such as those based on photonic crystals, plasmonics and metamaterials have been developed, accelerating the growth of knowledge related to nanoscale light manipulation. Coupled with recent interest in cheap, reliable renewable energy, a new field has blossomed, that of nanophotonic solar cells. In this thesis, we examine important properties of thin-film solar cells from a nanophotonics perspective. We identify key differences between nanophotonic devices and traditional, thick solar cells. We propose a new way of understanding and describing limits to light trapping and show that certain nanophotonic solar cell designs can have light trapping limits above the so called ray-optic or ergodic limit. We propose that a necessary requisite to exceed the traditional light trapping limit is that the active region of the solar cell must possess a local density of optical states (LDOS) higher than that of the corresponding, bulk material. Additionally, we show that in addition to having an increased density of states, the absorber must have an appropriate incoupling mechanism to transfer light from free space into the optical modes of the device. We outline a portfolio of new solar cell designs that have potential to exceed the traditional light trapping limit and numerically validate our predictions for select cases. We emphasize the importance of thinking about light trapping in terms of maximizing the optical modes of the device and efficiently coupling light into them from free space. To further explore these two concepts, we optimize patterns of superlattices of air holes in thin slabs of Si and show that by adding a roughened incoupling layer the total absorbed current can be increased synergistically. We suggest that the addition of a random scattering surface to a periodic patterning can increase incoupling by

  13. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    OpenAIRE

    Wang Lan; Lin Xianzhong; Ennaoui Ahmed; Wolf Christian; Lux-Steiner Martha Ch.; Klenk Reiner

    2016-01-01

    We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating ...

  14. Laser Welding of Silicon Foils for Thin-Film Solar Cell Manufacturing

    OpenAIRE

    Heßmann, Maik

    2014-01-01

    Thin-film solar module manufacturing is one of the most promising recent developments in photovoltaic research and has the potential to reduce production costs. As the necessity for competitive prices on the world market increases and manufacturers endeavor to bring down the cost of solar modules, thin-film technology is becoming more and more attractive. In this work a special technique was investigated which makes solar cell manufacturing more compatible with an industrial roll-to-roll proc...

  15. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Ali, N., E-mail: nisar.ali@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Department of Physics, Govt. Post Graduate Jehanzeb College Saidu Sharif, Swat, 19200 (Pakistan); Hussain, A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Wan Shamsuri, W.N. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Fu, Y.Q., E-mail: richard.fu@northumbria.ac.uk [Department of Physics and Electrical Engineering, Faculty of Engineering & Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST (United Kingdom)

    2016-12-30

    Highlights: • A new and novel material for solar cell applications is demonstrated as a replacement for toxic and expansive compounds. • The materials used in this compound are abundant and low cost. • Compound exhibit unusual optical and electrical properties. • The band gap was found to be comparable with that of GaAs. - Abstract: Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs – one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  16. Laser process for extended silicon thin film solar cells

    International Nuclear Information System (INIS)

    Hessmann, M.T.; Kunz, T.; Burkert, I.; Gawehns, N.; Schaefer, L.; Frick, T.; Schmidt, M.; Meidel, B.; Auer, R.; Brabec, C.J.

    2011-01-01

    We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

  17. Hydrogen passivation of polycrystalline Si thin film solar cells

    International Nuclear Information System (INIS)

    Gorka, Benjamin

    2010-01-01

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V OC of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V brk of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V brk . Plasma simulations were carried out, which indicate that best V OC corresponds to a minimum in ion energy. V OC was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range (≤400 C) is slow and takes several hours for the V OC to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V OC , which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T dep =200-700 C and were characterized by Raman, ESR and V OC measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration of 2.5.10 16 cm -3 after passivation was

  18. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    Licai Wang

    1999-07-01

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  19. Processing of semiconductors and thin film solar cells using electroplating

    Science.gov (United States)

    Madugu, Mohammad Lamido

    The global need for a clean, sustainable and affordable source of energy has triggered extensive research especially in renewable energy sources. In this sector, photovoltaic has been identified as a cheapest, clean and reliable source of energy. It would be of interest to obtain photovoltaic material in thin film form by using simple and inexpensive semiconductor growth technique such as electroplating. Using this growth technique, four semiconductor materials were electroplated on glass/fluorine-doped tin oxide (FTO) substrate from aqueous electrolytes. These semiconductors are indium selenide (In[x]Sey), zinc sulphide (ZnS), cadmium sulphide (CdS) and cadmium telluride (CdTe). In[x]Se[y] and ZnS were incorporated as buffer layers while CdS and CdTe layers were utilised as window and absorber layers respectively. All materials were grown using two-electrode (2E) system except for CdTe which was grown using 3E and 2E systems for comparison. To fully optimise the growth conditions, the as-deposited and annealed layers from all the materials were characterised for their structural, morphological, optical, electrical and defects structures using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption (UV-Vis spectroscopy), photoelectrochemical (PEC) cell measurements, current-voltage (I-V), capacitance-voltage (C-V), DC electrical measurements, ultraviolet photoelectron spectroscopy (UPS) and photoluminescence (PL) techniques. Results show that InxSey and ZnS layers were amorphous in nature and exhibit both n-type and p-type in electrical conduction. CdS layers are n-type in electrical conduction and show hexagonal and cubic phases in both the as-deposited and after annealing process. CdTe layers show cubic phase structure with both n-type and p-type in electrical conduction. CdTe-based solar cell structures with a n-n heterojunction plus large Schottky barrier, as well as multi-layer graded

  20. Compact Intermediate-Temperature Fuel Cells

    National Research Council Canada - National Science Library

    Sun, Yipeng

    2003-01-01

    In Phase I, we demonstrate the feasibility of making supported electronically insulating, proton conducting inorganic thin films on metal hydride foils for intermediate temperature fuel cell electrolytes...

  1. Hydrogen passivation of polycrystalline Si thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gorka, Benjamin

    2010-12-15

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V{sub OC} of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V{sub brk} of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V{sub brk}. Plasma simulations were carried out, which indicate that best V{sub OC} corresponds to a minimum in ion energy. V{sub OC} was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range ({<=}400 C) is slow and takes several hours for the V{sub OC} to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V{sub OC}, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T{sub dep}=200-700 C and were characterized by Raman, ESR and V{sub OC} measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration

  2. Machine Vision based Micro-crack Inspection in Thin-film Solar Cell Panel

    Directory of Open Access Journals (Sweden)

    Zhang Yinong

    2014-09-01

    Full Text Available Thin film solar cell consists of various layers so the surface of solar cell shows heterogeneous textures. Because of this property the visual inspection of micro-crack is very difficult. In this paper, we propose the machine vision-based micro-crack detection scheme for thin film solar cell panel. In the proposed method, the crack edge detection is based on the application of diagonal-kernel and cross-kernel in parallel. Experimental results show that the proposed method has better performance of micro-crack detection than conventional anisotropic model based methods on a cross- kernel.

  3. Production method of thin film solar cell; Hakumaku taiyo denchi no seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Oki, K.; Watanabe, T.; Matsui, M.

    1996-01-23

    This invention relates to the film formation of chalcopyrite type compound semiconductor used for thin film solar cell. In the case of CuInS2 thin film, heteromorphic phases such as CuIn5S8, Cu2S, and In2S3 are formed on the top surface together with the CuInS2 phase, resulting in the decrease in junction property when n-type semiconductor layer such as CdS layer is formed on it. According to the invention, p-type semiconductor layer made of chalcopyrite type compound semiconductor is dipped into an ammonia water before being laminated with n-type semiconductor layer. Although higher concentration and higher temperature of the ammonia water accelerates the heteromorphic phase film removal velocity, it also gives rise to higher evaporation rate of ammonia. The preferable concentration and temperature are, therefore, 0.01 - 50% and 5 - 80{degree}C, respectively. In this way, the chalcopyrite type compound semiconductor thin film free from heteromorphic phases on its surface can be produced. The thin film solar cell produced by using such thin film has a high conversion efficiency because of a good junction property with n-type semiconductor. 1 fig.

  4. Procedures and practices for evaluating thin-film solar cell stability

    NARCIS (Netherlands)

    Roesch, R; Faber, T; von Hauff, E.L.; Brown, T. M.; Lira-Cantu, M.; Hoppe, H.

    2015-01-01

    During the last few decades, and in some cases only the last few years, novel thin-film photovoltaic (PV) technologies such as dye-sensitized solar cells (DSSC), organic solar cells (OPV), and, more recently, perovskite-based solar cells (PSC) have been growing in maturity with respect to device

  5. The impact of sodium contamination in tin sulfide thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Vera Steinmann

    2016-02-01

    Full Text Available Through empirical observations, sodium (Na has been identified as a benign contaminant in some thin-film solar cells. Here, we intentionally contaminate thermally evaporated tin sulfide (SnS thin-films with sodium and measure the SnS absorber properties and solar cell characteristics. The carrier concentration increases from 2 × 1016 cm−3 to 4.3 × 1017 cm−3 in Na-doped SnS thin-films, when using a 13 nm NaCl seed layer, which is detrimental for SnS photovoltaic applications but could make Na-doped SnS an attractive candidate in thermoelectrics. The observed trend in carrier concentration is in good agreement with density functional theory calculations, which predict an acceptor-type NaSn defect with low formation energy.

  6. Spray pyrolysis synthesized Cu(In,Al)(S,Se)2 thin films solar cells

    Science.gov (United States)

    Aamir Hassan, Muhammad; Mujahid, Mohammad; Woei, Leow Shin; Wong, Lydia Helena

    2018-03-01

    Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.

  7. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  8. Surface Engineering of ZnO Thin Film for High Efficiency Planar Perovskite Solar Cells

    OpenAIRE

    Tseng, Zong-Liang; Chiang, Chien-Hung; Wu, Chun-Guey

    2015-01-01

    Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic properties (band structure) of the resulting ZnO thin film and therefore the photovoltaic performance o...

  9. Synthesis of CdZnS by Chemical Bath Deposition for Thin Film Solar Cells

    OpenAIRE

    Fjällström, Emil

    2017-01-01

    The buffer layer is a crucial component in thin film solar cells. Defects at the interface between absorber and buffer layer lead to high recombination rate and the band structure at the interface highly affects the performance of the solar cell. In this thesis a method to synthesize thin films containing cadmium, zinc and sulfur, CdZnS, by chemical bath deposition has been developed and evaluated. A higher current from the device is expected when replacing the common buffer layer cadmium sul...

  10. Laser scribing of CIGS thin-film solar cell on flexible substrate

    Science.gov (United States)

    Hwang, David J.; Kuk, Seungkuk; Wang, Zhen; Fu, Shi; Zhang, Tao; Kim, Gayeon; Kim, Won Mok; Jeong, Jeung-hyun

    2017-01-01

    Laser scribing technology has been actively developed for thin-film solar cell fabrication taking a number of advantages over mechanical scribing. Its non-contact processing nature enables reliable and precise scribing processes. In particular, it is almost unavoidable to use laser scribing method for fabricating high-quality flexible thin-film solar cells. Despite the fundamental merits that laser scribing can offer, still a number of challenges should be addressed in order to replace the mechanical counterpart for wider range of thin-film solar cells. In this study, we explore optimal laser scribing conditions for copper-indium-gallium-selenide (CIGS) thin-film solar cells, especially based on flexible polyimide (PI) substrate in close comparison with that based on soda-lime glass substrate. Picosecond-pulsed laser of repetition rate up to 100 kHz and wavelength of 532 nm ( 12 ps temporal pulse width) was mainly tested, and scribing speed in the range of 0.01-1 m/s was examined with a few different laser focal spot diameters (27, 34, and 62 μm). Main focus of this study is in understanding distinct laser scribing mechanisms for flexible substrate configurations, thereby finding out intrinsic optimal processing parameters. One of the most critical requirements is to prevent possible damage or deformation of underlying thin-film layer(s) or PI substrate. Effect of microstructures of thin films (in particular, Mo and CIGS) on the scribing behavior was also examined. In order to further improve the performance of the scribing process and reduce the laser power budget as well, mild gas injection scheme was tested.

  11. Dye sensitized solar cells based on nanowire sculptured thin film titanium dioxide photoanodes

    Science.gov (United States)

    Pursel, Sean M.

    Energy harvested from the sun using photovoltaics (PVs) is a renewable resource in high demand. Photovoltaics convert photons into electron-hole pairs which are then separated and used for electrical power. 75 TW of energy arrives from the sun every year onto US soil. Harvesting it all would provide enough energy to power the entire world for more than five years. It is this abundance of energy that makes PVs an attractive alternative to fossil fuels. PVs currently produce 0.15% of the energy consumed in the US. Production needs to grow as the worldwide demand for energy is projected to almost double by 2050. Fundamental and device based PV research have made steady efficiency gains in silicon based devices and thin film devices have started to become commercially viable. However, less expensive devices with suitable efficiency have not been fully developed. Dye sensitized solar cells (DSSCs) are one such device which has been optimized using standard components. However, device efficiency has not increased significantly since DSSCs were first conceived in 1991. Interestingly, none of the standard components are optimized, but act in a synergistic way in the most efficient devices. This research, along with other parallel research, attempts to optimize a single component of DSSCs with the goal of combining efforts to produce a device with increased efficiency. This research attempts to optimize the TiO2 photoanode used in DSSCs in terms of electron collection, dye coverage, light harvesting, and novel electrolyte infiltration by replacing the standard colloidal structure with nanowires deposited using physical vapor deposition at an oblique angle to form sculptured thin films. The results are quantified through standard photovoltaic testing, electrochemical impedance spectroscopy, UV-Vis-NIR spectroscopy, and general materials characterization techniques. The nanowire photoanodes are engineered during deposition using reactive evaporation, substrate heating

  12. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  13. Advanced Light Management Approaches for Thin-Film Silicon Solar Cells

    NARCIS (Netherlands)

    Zeman, M.; Isabella, O.; Jäger, K.; Santbergen, R.; Solntsev, S.; Topic, M.; Krc, J.

    2012-01-01

    Light management is important for improving the performance of thin-film solar cells. Advanced concepts of efficient light scattering and trapping inside the cell structures need to be investigated. An important tool for design and optimisation of the concepts present optical modelling and

  14. Utilization of geometrci light trapping in thin film silicon solar cells: simulations and experiments

    NARCIS (Netherlands)

    Jong, de M.M.; Sonneveld, P.J.; Baggerman, J.; Rijn, van C.J.M.; Rath, J.K.; Schropp, R.E.I.

    2014-01-01

    In this study, we present a new light absorption enhancement method for p-i-n thin film silicon solar cells using pyramidal surface structures, larger than the wavelength of visible light. Calculations show a maximum possible current enhancement of 45% compared with cells on a flat substrate. We

  15. Utilization of geometric light trapping in thin film silicon solar cells: Simulations and experiments

    NARCIS (Netherlands)

    de Jong, M.M.; Sonneveld, P.J.; Baggerman, J.; van Rijn, C.J.M.; Rath, J.K.; Schropp, R.E.I.

    2012-01-01

    In this study, we present a new light absorption enhancement method for p-i-n thin film silicon solar cells using pyramidal surface structures, larger than the wavelength of visible light. Calculations show a maximum possible current enhancement of 45% compared with cells on a flat substrate. We

  16. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    NARCIS (Netherlands)

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of

  17. Quadruple-Junction Thin-Film Silicon-Based Solar Cells

    NARCIS (Netherlands)

    Si, F.T.

    2017-01-01

    The direct utilization of sunlight is a critical energy source in a sustainable future. One of the options is to convert the solar energy into electricity using thin-film silicon-based solar cells (TFSSCs). Solar cells in a triple-junction configuration have exhibited the highest energy conversion

  18. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro, E-mail: takeuchi@umd.edu [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740 (United States); Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740 (United States)

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  19. Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

    OpenAIRE

    Powalla, Michael; Bonnet, Dieter

    2007-01-01

    Thin-film photovoltaic modules based on Cu-In-Ga-Se-S (CIS) and CdTe are already being produced with high-quality and solar conversion efficiencies of around 10%, with values up to 14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules...

  20. Thin-film-based sensitivity enhancement for total internal reflection fluorescence live-cell imaging.

    Science.gov (United States)

    Kim, Kyujung; Cho, Eun-Jin; Huh, Yong-Min; Kim, Donghyun

    2007-11-01

    We investigated experimentally the evanescent field enhancement based on dielectric thin films in total internal reflection microscopy. The sample employed two layers of Al2O3 and SiO2 deposited on an SF10 glass substrate. Field intensity enhancement measured by fluorescent excitation of microbeads relative to that of a control sample without dielectric films was polarization dependent, determined as 4.2 and 2.4 for TE and TM polarizations, respectively, and was in good agreement with numerical results. The thin-film-based field enhancement was also applied to live-cell imaging of quantum dots, which confirmed the sensitivity enhancement qualitatively.

  1. Effect of ZnO Nanostructured Thin Films on Pseudomonas Putida Cell Division

    Science.gov (United States)

    Ivanova, I.; Lukanov, A.; Angelov, O.; Popova, R.; Nichev, H.; Mikli, V.; Dimova-Malinovska, Doriana; Dushkin, C.

    In this report we study the interaction between the bacteria Pseudomonas putida and nanostructured ZnO and ZnO:H thin films prepared by magnetron sputtering of a ZnO target. The nanostructured ZnO and ZnO:H thin films possess some biological-active properties when in contact with bacteria. Our experimental data show that these films have no destructive effect on the cell division of Pseudomonas putida in poor liquid medium and can be applied in biosensor devices.

  2. Spray-on Thin Film PV Solar Cells: Advances, Potentials and Challenges

    Directory of Open Access Journals (Sweden)

    Morteza Eslamian

    2014-01-01

    Full Text Available The capability to fabricate photovoltaic (PV solar cells on a large scale and at a competitive price is a milestone waiting to be achieved. Currently, such a fabrication method is lacking because the effective methods are either difficult to scale up or expensive due to the necessity for fabrication in a vacuum environment. Nevertheless, for a class of thin film solar cells, in which the solar cell materials can be processed in a solution, up scalable and vacuum-free fabrication techniques can be envisioned. In this context, all or some layers of polymer, dye-sensitized, quantum dot, and copper indium gallium selenide thin film solar cells illustrate some examples that may be processed in solution. The solution-processed materials may be transferred to the substrate by atomizing the solution and carrying the spray droplets to the substrate, a process that will form a thin film after evaporation of the solvent. Spray coating is performed at atmospheric pressure using low cost equipment with a roll-to-roll process capability, making it an attractive fabrication technique, provided that fairly uniform layers with high charge carrier separation and transport capability can be made. In this paper, the feasibility, the recent advances and challenges of fabricating spray-on thin film solar cells, the dynamics of spray and droplet impaction on the substrate, the photo-induced electron transfer in spray-on solar cells, the challenges on characterization and simulation, and the commercialization status of spray-on solar cells are discussed.

  3. Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

    Science.gov (United States)

    Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

    2017-09-01

    In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

  4. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    NARCIS (Netherlands)

    de Jong, M.M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic

  5. energy efficiency of a photovoltaic cell based thin films czts by scaps

    African Journals Online (AJOL)

    Mebarkia C, Dib D, Zerfaoui H, Belghith R

    2016-05-01

    May 1, 2016 ... The basic equations are as follows: Poisson's equation that relates the load to the electrostatic potential and continuity equations for electrons and holes. However, several additional options must be present in the program when you want to simulate thin film solar cells. It should be able to take into account ...

  6. New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopy

    NARCIS (Netherlands)

    Eijt, S.W.H.; Shi, W.; Mannheim, A.; Butterling, M.; Schut, H.; Egger, W; Dickmann, M.; Hugenschmidt, C; Shakeri, B.; Meulenberg, R; Callewaert, V.; Saniz, R; Partoens, B; Barbiellini, B; Bansil, A; Melskens, J.; Zeman, M.; Smets, A.H.M.; Kulbak, M.; Hodes, G.; Cahen, D.; Brück, E.H.

    2017-01-01

    Recent studies showed that positron annihilation methods can provide key insights into the nanostructure and electronic structure of thin film solar cells. In this study, positron annihilation lifetime spectroscopy (PALS) is applied to investigate CdSe quantum dot (QD) light absorbing layers,

  7. Multi-Material Front Contact for 19% Thin Film Solar Cells

    NARCIS (Netherlands)

    Deelen, J. van; Tezsevin, Y.; Barink, M.

    2016-01-01

    The trade-off between transmittance and conductivity of the front contact material poses abottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing

  8. Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

    NARCIS (Netherlands)

    Deelen, J. van; Barink, M.; Klerk, L.; Voorthuijzen, P.; Hovestad, A.

    2015-01-01

    Modeling indicates a potential efficiency boost of 17% if thin-film solar panels are featured with a metallic grid. Variations of transparent conductive oxide sheet resistance, cell length, and grid dimensions are discussed. These parameters were optimized simultaneously to obtain the best result.

  9. Carrier transport in polycrystalline silicon thin films solar cells grown on a highly textured structure

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Takakura, H.; Hamakawa, Y.; Muhida, R.; Kawamura, T.; Harano, T.; Toyama, T.; Okamoto, H.

    2004-01-01

    Roč. 43, 9A (2004), s. 5955-5959 ISSN 0021-4922 Institutional research plan: CEZ:AV0Z1010914 Keywords : polycrystalline silicon thin film * solar cells * substrate texture Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.142, year: 2004

  10. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    International Nuclear Information System (INIS)

    Kim, Donguk; Park, Young; Kim, Minha; Choi, Youngkwan; Park, Yong Seob; Lee, Jaehyoeng

    2015-01-01

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T g , the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C

  11. Polyol-mediated Synthesis of Chalcogenide Nanoparticles for Thin-film Solar Cells

    OpenAIRE

    Dong, Hailong

    2014-01-01

    The aim of this work was polyol-mediated syntheses of chalcogenide nanoparticles for printable thin-film solar cells. In this thesis, chalcogenide nanoparticles, such as Cu2Se, In2Se3, CZTS, Se@CuSe and Te@Bi2Te3, have been successfully synthesized via a polyol-mediated method.

  12. Designing optimized nano textures for thin-film silicon solar cells

    NARCIS (Netherlands)

    Jäger, K.; Fischer, M.; Van Swaaij, R.A.C.M.M.; Zeman, M.

    2013-01-01

    Thin-film silicon solar cells (TFSSC), which can be manufactured from abundant materials solely, contain nano-textured interfaces that scatter the incident light. We present an approximate very fast algorithm that allows optimizing the surface morphology of two-dimensional nano-textured interfaces.

  13. Photovoltaic material and device measurements workshop: focus on polycrystalline thin film cells

    Energy Technology Data Exchange (ETDEWEB)

    None

    1979-01-01

    The general purpose of the workshop was to accelerate the development of thin film solar cells by improving the versatility and reliability of material and device measurement techniques. Papers were presented under the following sessions: structural/chemical session; optical/electro-optical session; charge transport session; and poster session. Each paper was processed for EDB.

  14. Growth techniques used to develop CDS/CDTE thin film solar cells ...

    African Journals Online (AJOL)

    Growth techniques used to develop CDS/CDTE thin film solar cells: a review. ... Techniques such as molecular beam epitaxy (MBE), metal organic chemical vapour deposition (MOCVD) called melt growth or Bridgman are well known as high quality semiconductor growth techniques. One of the limitations of these ...

  15. Cell adhesion on NiTi thin film sputter-deposited meshes

    Energy Technology Data Exchange (ETDEWEB)

    Loger, K. [Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); Engel, A.; Haupt, J. [Department of Cardiovascular Surgery, University Hospital of Schleswig-Holstein, Kiel (Germany); Li, Q. [Biocompatible Nanomaterials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); Lima de Miranda, R. [Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); ACQUANDAS GmbH, Kiel (Germany); Quandt, E. [Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany); Lutter, G. [Department of Cardiovascular Surgery, University Hospital of Schleswig-Holstein, Kiel (Germany); Selhuber-Unkel, C. [Biocompatible Nanomaterials, Institute for Materials Science, Faculty of Engineering, University of Kiel (Germany)

    2016-02-01

    Scaffolds for tissue engineering enable the possibility to fabricate and form biomedical implants in vitro, which fulfill special functionality in vivo. In this study, free-standing Nickel–Titanium (NiTi) thin film meshes were produced by means of magnetron sputter deposition. Meshes contained precisely defined rhombic holes in the size of 440 to 1309 μm{sup 2} and a strut width ranging from 5.3 to 9.2 μm. The effective mechanical properties of the microstructured superelastic NiTi thin film were examined by tensile testing. These results will be adapted for the design of the holes in the film. The influence of hole and strut dimensions on the adhesion of sheep autologous cells (CD133 +) was studied after 24 h and after seven days of incubation. Optical analysis using fluorescence microscopy and scanning electron microscopy showed that cell adhesion depends on the structural parameters of the mesh. After 7 days in cell culture a large part of the mesh was covered with aligned fibrous material. Cell adhesion is particularly facilitated on meshes with small rhombic holes of 440 μm{sup 2} and a strut width of 5.3 μm. Our results demonstrate that free-standing NiTi thin film meshes have a promising potential for applications in cardiovascular tissue engineering, particularly for the fabrication of heart valves. - Highlights: • Freestanding NiTi thin film scaffolds were fabricated with magnetron sputtering process. • Effective mechanical properties of NiTi scaffolds can be adapted by the mesh structure parameters. • Cell adhesion on the NiTi thin film scaffold is controlled by the structure parameters of the mesh. • Cells strongly adhere after seven days and form a confluent layer on the mesh.

  16. Cell adhesion on NiTi thin film sputter-deposited meshes

    International Nuclear Information System (INIS)

    Loger, K.; Engel, A.; Haupt, J.; Li, Q.; Lima de Miranda, R.; Quandt, E.; Lutter, G.; Selhuber-Unkel, C.

    2016-01-01

    Scaffolds for tissue engineering enable the possibility to fabricate and form biomedical implants in vitro, which fulfill special functionality in vivo. In this study, free-standing Nickel–Titanium (NiTi) thin film meshes were produced by means of magnetron sputter deposition. Meshes contained precisely defined rhombic holes in the size of 440 to 1309 μm 2 and a strut width ranging from 5.3 to 9.2 μm. The effective mechanical properties of the microstructured superelastic NiTi thin film were examined by tensile testing. These results will be adapted for the design of the holes in the film. The influence of hole and strut dimensions on the adhesion of sheep autologous cells (CD133 +) was studied after 24 h and after seven days of incubation. Optical analysis using fluorescence microscopy and scanning electron microscopy showed that cell adhesion depends on the structural parameters of the mesh. After 7 days in cell culture a large part of the mesh was covered with aligned fibrous material. Cell adhesion is particularly facilitated on meshes with small rhombic holes of 440 μm 2 and a strut width of 5.3 μm. Our results demonstrate that free-standing NiTi thin film meshes have a promising potential for applications in cardiovascular tissue engineering, particularly for the fabrication of heart valves. - Highlights: • Freestanding NiTi thin film scaffolds were fabricated with magnetron sputtering process. • Effective mechanical properties of NiTi scaffolds can be adapted by the mesh structure parameters. • Cell adhesion on the NiTi thin film scaffold is controlled by the structure parameters of the mesh. • Cells strongly adhere after seven days and form a confluent layer on the mesh.

  17. New designs and characterization techniques for thin-film solar cells

    Science.gov (United States)

    Pang, Yutong

    This thesis presents a fundamentally new thin-film photovoltaic design and develops several novel characterization techniques that improve the accuracy of thin-film solar cell computational models by improving the accuracy of the input data. We first demonstrate a novel organic photovoltaic (OPV) design, termed a "Slot OPV", in which the active layer is less than 50 nm; We apply the principles of slot waveguides to confine light within the active layer. According to our calculation, the guided-mode absorption for a 10nm thick active layer equal to the absorption of normal incidence on an OPV with a 100nm thick active layer. These results, together with the expected improvement in charge extraction for ultrathin layers, suggest that slot OPVs can be designed with greater power conversion efficiency than today's state-of-art OPV architectures if practical challenges, such as the efficient coupling of light into these modes, can be overcome. The charge collection probability, i.e. the probability that charges generated by absorption of a photon are successfully collected as current, is a critical feature for all kinds of solar cells. While the electron-beam-induced current (EBIC) method has been used in the past to successfully reconstruct the charge collection probability, this approach is destructive and requires time-consuming sample preparation. We demonstrate a new nondestructive optoelectronic method to reconstruct the charge collection probability by analyzing the internal quantum efficiency (IQE) data that are measured on copper indium gallium diselenide (CIGS) thin-film solar cells. We further improve the method with a parameter-independent regularization approach. Then we introduce the Self-Constrained Ill-Posed Inverse Problem (SCIIP) method, which improves the signal-to-noise of the solution by using the regularization method with system constraints and optimization via an evolutionary algorithm. For a thin-film solar cell optical model to be an accurate

  18. Processing and modeling issues for thin-film solar cell devices. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; Phillips, J.E. [Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

    1997-11-01

    During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

  19. Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

    Directory of Open Access Journals (Sweden)

    Hongxia Wang

    2011-01-01

    Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

  20. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  1. Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Marquis Crose

    2017-02-01

    Full Text Available This work focuses on the development of a multiscale computational fluid dynamics (CFD simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport phenomena within a 2D axisymmetric reactor geometry. Additionally, the complex interactions that take place on the surface of a-Si:H thin films are coupled with the CFD simulation using a novel kinetic Monte Carlo scheme which describes the thin film growth, leading to a multiscale CFD model. Due to the significant computational challenges imposed by this multiscale CFD model, a parallel computation strategy is presented which allows for reduced processing time via the discretization of both the gas-phase mesh and microscopic thin film growth processes. Finally, the multiscale CFD model has been applied to the PECVD process at industrially relevant operating conditions revealing non-uniformities greater than 20% in the growth rate of amorphous silicon films across the radius of the wafer.

  2. Polycaprolactone Thin-Film Micro- and Nanoporous Cell-Encapsulation Devices.

    Science.gov (United States)

    Nyitray, Crystal E; Chang, Ryan; Faleo, Gaetano; Lance, Kevin D; Bernards, Daniel A; Tang, Qizhi; Desai, Tejal A

    2015-06-23

    Cell-encapsulating devices can play an important role in advancing the types of tissue available for transplantation and further improving transplant success rates. To have an effective device, encapsulated cells must remain viable, respond to external stimulus, and be protected from immune responses, and the device itself must elicit a minimal foreign body response. To address these challenges, we developed a micro- and a nanoporous thin-film cell encapsulation device from polycaprolactone (PCL), a material previously used in FDA-approved biomedical devices. The thin-film device construct allows long-term bioluminescent transfer imaging, which can be used for monitoring cell viability and device tracking. The ability to tune the microporous and nanoporous membrane allows selective protection from immune cell invasion and cytokine-mediated cell death in vitro, all while maintaining typical cell function, as demonstrated by encapsulated cells' insulin production in response to glucose stimulation. To demonstrate the ability to track, visualize, and monitor the viability of cells encapsulated in implanted thin-film devices, we encapsulated and implanted luciferase-positive MIN6 cells in allogeneic mouse models for up to 90 days. Lack of foreign body response in combination with rapid neovascularization around the device shows promise in using this technology for cell encapsulation. These devices can help elucidate the metrics required for cell encapsulation success and direct future immune-isolation therapies.

  3. Thermal Characteristics of Multilayer Insulation Materials for Flexible Thin-Film Solar Cell Array of Stratospheric Airship

    Directory of Open Access Journals (Sweden)

    Kangwen Sun

    2014-01-01

    Full Text Available Flexible thin-film solar cell is an efficient energy system on the surface of stratospheric airship for utilizing the solar energy. In order to ensure the normal operation of airship platform, the thermal control problem between the flexible thin-film solar cell and the airship envelope should be properly resolved. In this paper, a multilayer insulation material (MLI is developed first, and low temperature environment test is carried out to verify the insulation effect of MLI. Then, a thermal heat transfer model of flexible thin-film solar cell and MLI is proposed, and the equivalent thermal conductivity coefficients of flexible thin-film solar cell and Nomex honeycomb are calculated based on the environment test and the temperature profile of flexible thin-film solar cell versus each layer of MLI. Finally, FLUENT is used for modeling and simulation analysis on the flexible thin-film solar cell and MLI, and the simulation results agree well with the experimental data, which validate the correctness of the proposed heat transfer model of MLI. In some way, our study can provide helpful support for further engineering applications of flexible thin-film solar cell.

  4. Combining light-harvesting with detachability in high-efficiency thin-film silicon solar cells.

    Science.gov (United States)

    Ram, Sanjay K; Desta, Derese; Rizzoli, Rita; Bellettato, Michele; Lyckegaard, Folmer; Jensen, Pia B; Jeppesen, Bjarke R; Chevallier, Jacques; Summonte, Caterina; Larsen, Arne Nylandsted; Balling, Peter

    2017-06-01

    Efforts to realize thin-film solar cells on unconventional substrates face several obstacles in achieving good energy-conversion efficiency and integrating light-management into the solar cell design. In this report a technique to circumvent these obstacles is presented: transferability and an efficient light-harvesting scheme are combined for thin-film silicon solar cells by the incorporation of a NaCl layer. Amorphous silicon solar cells in p-i-n configuration are fabricated on reusable glass substrates coated with an interlayer of NaCl. Subsequently, the solar cells are detached from the substrate by dissolution of the sacrificial NaCl layer in water and then transferred onto a plastic sheet, with a resultant post-transfer efficiency of 9%. The light-trapping effect of the surface nanotextures originating from the NaCl layer on the overlying solar cell is studied theoretically and experimentally. The enhanced light absorption in the solar cells on NaCl-coated substrates leads to significant improvement in the photocurrent and energy-conversion efficiency in solar cells with both 350 and 100 nm thick absorber layers, compared to flat-substrate solar cells. Efficient transferable thin-film solar cells hold a vast potential for widespread deployment of off-grid photovoltaics and cost reduction.

  5. Light trapping characteristics of glass substrate with hemisphere pit arrays in thin film Si solar cells

    International Nuclear Information System (INIS)

    Chen Le; Wang Qing-Kang; Wangyang Pei-Hua; Huang Kun; Shen Xiang-Qian

    2015-01-01

    In this paper, the light trapping characteristics of glass substrate with hemisphere pit (HP) arrays in thin film Si solar cells are theoretically studied via a numerical approach. It is found that the HP glass substrate has good antireflection properties. Its surface reflectance can be reduced by ∼ 50% compared with planar glass. The HP arrays can make the unabsorbed light return to the absorbing layer of solar cells, and the ratio of second absorption approximately equals 30%. Thus, the glass substrate with the hemisphere pit arrays (HP glass) can effectively reduce the total reflectivity of a solar cell from 20% to 13%. The HP glass can also prolong the optical path length. The numerical results show that the total optical path length of the thin film Si solar cell covered with the HP glass increases from 2ω to 4ω. These results are basically consistent with the experimental results. (paper)

  6. Photon management in thin-film solar cells; Photon-Management in Duennschicht-Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Fahr, Stephan

    2011-11-22

    In this thesis procedures were presented, which modify the propagation of the incident light in such a way that by this the efficiency of thin-film solar cells is increased. The strength of the presented numerical studies lies thereby in the rigorous solution of Maxwell's equations. Fundamental statements concerning the lay-out of an ideal texture could be made, which for present thin-film solar cells over the whole relevant spectral range both suppresses reflection losses and leads to an elongation of the effective path. Object of the thesis was also the design of a spectral- and angular-selective filter, which confines the acceptance angle of a solar cell with the aim of an improved absorption in the long-wave spectral region. Furthermore also tandem cells on the base of amorphous and microcrystalline silicon were studied.

  7. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    Directory of Open Access Journals (Sweden)

    Wang Lan

    2016-01-01

    Full Text Available We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  8. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    Science.gov (United States)

    Wang, Lan; Lin, Xianzhong; Ennaoui, Ahmed; Wolf, Christian; Lux-Steiner, Martha Ch.; Klenk, Reiner

    2016-02-01

    We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  9. ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES

    Directory of Open Access Journals (Sweden)

    Peter Pikna

    2014-10-01

    Full Text Available Thin film polycrystalline silicon (poly-Si solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ. Tested temperature of the sample (55°C – 110°C was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

  10. Proton conducting BaCe{sub 0.7}Zr{sub 0.1}Y{sub 0.2}O{sub 2.9} thin films by spray deposition for solid oxide fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Dubal, S.U.; Jamale, A.P.; Bhosale, C.H. [Department of Physics, Shivaji University, Kolhapur 416 004 (India); Jadhav, L.D., E-mail: ldjadhav.phy@gmail.com [Department of Physics, Rajaram College, Kolhapur 416 004 (India)

    2015-01-01

    Highlights: • BCY and BCZY thin films electrolytes are prepared by SPT. • The BCZY oxides exhibit better sinterability than BCY. • The elemental composition of films was affirmed with EDAX. • Raman spectra confirmed absence of any surface impurities. • BCZY film shows higher conductivities in Moist-air. - Abstract: The nanocrystalline BaCe{sub 0.7}Zr{sub 0.1}Y{sub 0.2}O{sub 2.9} (BCZY) thin films have been deposited on alumina substrate by simple and economic spray pyrolysis technique. The spray deposited films were annealed at different temperatures and were characterized by different physio-chemical techniques. The XRD studies revealed orthorhombic structured BCZY thin films with little shift in 2θ compared to BCY. The crystallite size and grain size were observed to enhance with annealing temperature. The grain growth was completed by 1000 °C and compact structure was obtained at 1100 °C. Evolution of the surface microstructure and roughness of the BCY and BCZY thin films is done using AFM. Raman spectra of BCZY and BCY exhibits pronounced characteristic band at 359 and 353.25 cm{sup −1} respectively. The proton conductivity of BCZY thin film in moist atmosphere was 0.83 × 10{sup −3} S cm{sup −1} at 400 °C.

  11. Solid Acid Based Fuel Cells

    National Research Council Canada - National Science Library

    Haile, Sossina M

    2005-01-01

    ...) without pressurization. In this configuration, the thin-film fuel cell is supported on a porous stainless steel gas diffusion layer and the electrocatalyst and electrolyte layers are spray-deposited...

  12. Ion beam analysis of Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Karydas, A.G. [International Atomic Energy Agency (IAEA), IAEA Laboratories, Nuclear Science and Instrumentation Laboratory, A-2444 Seibersdorf (Austria); Institute of Nuclear and Particle Physics, NCSR “Demokritos”, 153 10 Aghia Paraskevi, Athens Greece (Greece); Streeck, C. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Radovic, I. Bogdanovic [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Kaufmann, C.; Rissom, T. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Beckhoff, B. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Jaksic, M. [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E. N. 10, Apartado 21, 2686-953 Sacavém (Portugal)

    2015-11-30

    Graphical abstract: - Highlights: • Elemental depth profiles for various CIGS thin films were quantitatively determined. • Pure absorbers, complete cell and bilayer solar cells were prepared and analyzed. • Synergistic PIXE and RBS analysis of thin solar cells using alpha beam particles. • High energy alpha beam resolved completely the Indium depth profile. • Synchrotron based Reference Free GIXRF quantitative analysis validated IBA results. - Abstract: The present work investigates the potential of ion beam analysis (IBA) techniques such as the Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) using helium ions to provide quantitative in-depth elemental analysis of various types of Cu(In,Ga)Se{sub 2} thin films. These films with a thickness of about 2 μm are used as absorber layers in photovoltaic devices with continuously increasing the performance of this technology. The preparation process generally aims to obtain an in-depth gradient of In and Ga concentrations that optimizes the optoelectronic and electrical properties of the solar cell. The measurements were performed at directly accessible single or double layered CIGS absorbers and at buried absorbers in completed thin film solar cells. The IBA data were analyzed simultaneously in order to derive best fitted profiles that match all experimental RBS and PIXE spectra. For some samples elemental profiles deduced form synchrotron based, reference free grazing incidence X-ray fluorescence analysis were compared with the IBA results and an overall good agreement was observed within quoted uncertainties.

  13. Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

    Science.gov (United States)

    Zaki, A. A.; El-Amin, A. A.

    2017-12-01

    In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

  14. Cell adhesion on NiTi thin film sputter-deposited meshes.

    Science.gov (United States)

    Loger, K; Engel, A; Haupt, J; Li, Q; Lima de Miranda, R; Quandt, E; Lutter, G; Selhuber-Unkel, C

    2016-02-01

    Scaffolds for tissue engineering enable the possibility to fabricate and form biomedical implants in vitro, which fulfill special functionality in vivo. In this study, free-standing Nickel–Titanium(NiTi) thin film mesheswere produced by means of magnetron sputter deposition.Meshes contained precisely defined rhombic holes in the size of 440 to 1309 μm2 and a strut width ranging from 5.3 to 9.2 μm. The effective mechanical properties of the microstructured superelastic NiTi thin film were examined by tensile testing. These results will be adapted for the design of the holes in the film. The influence of hole and strut dimensions on the adhesion of sheep autologous cells (CD133+) was studied after 24 h and after seven days of incubation. Optical analysis using fluorescence microscopy and scanning electron microscopy showed that cell adhesion depends on the structural parameters of the mesh. After 7 days in cell culture a large part of the mesh was covered with aligned fibrous material. Cell adhesion is particularly facilitated on meshes with small rhombic holes of 440 μm2 and a strut width of 5.3 μm. Our results demonstrate that free-standing NiTi thin film meshes have a promising potential for applicationsin cardiovascular tissue engineering, particularly for the fabrication of heart valves.

  15. Light trapping in thin-film solar cells measured by Raman spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Ledinský, Martin; Moulin, E.; Bugnon, G.; Ganzerová, Kristína; Vetushka, Aliaksi; Meillaud, F.; Fejfar, Antonín; Ballif, C.

    2014-01-01

    Roč. 105, č. 11 (2014), "111106-1"-"111106-4" ISSN 0003-6951 R&D Projects: GA ČR GA14-15357S; GA MŠk(CZ) LM2011026; GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - FAST TRACK Institutional support: RVO:68378271 Keywords : light trapping * microcrystalline silicon * thin film solar cell * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.302, year: 2014

  16. Organic thin-film solar cells: next generation low-cost photovoltaic ...

    African Journals Online (AJOL)

    5 illumination (100 mW/cm2) and external quantum efficiency over 50% for organic thin-film photovoltaic cells using a phthalocyanine-fullerene (ZnPc/C60) bulk heterojunction as an active layer, embedded into a p-i-n type architecture with doped wide-gap charge transport layers. The p-i-n architecture allows for the design ...

  17. Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films: Solar cell applications

    International Nuclear Information System (INIS)

    Fang Li; Chen Jing; Xu Ling; Xu Jun; Ma Zhong-Yuan; Su Wei-Ning; Yu Yao

    2013-01-01

    Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42–2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300°C show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained. (interdisciplinary physics and related areas of science and technology)

  18. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  19. Radiation resistance of thin-film solar cells for space photovoltaic power

    Science.gov (United States)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  20. Silicon Dioxide Thin Film Mediated Single Cell Nucleic Acid Isolation

    Science.gov (United States)

    Bogdanov, Evgeny; Dominova, Irina; Shusharina, Natalia; Botman, Stepan; Kasymov, Vitaliy; Patrushev, Maksim

    2013-01-01

    A limited amount of DNA extracted from single cells, and the development of single cell diagnostics make it necessary to create a new highly effective method for the single cells nucleic acids isolation. In this paper, we propose the DNA isolation method from biomaterials with limited DNA quantity in sample, and from samples with degradable DNA based on the use of solid-phase adsorbent silicon dioxide nanofilm deposited on the inner surface of PCR tube. PMID:23874571

  1. Unit cell determination of epitaxial thin films based on reciprocal space vectors by high-resolution X-ray diffractometry

    OpenAIRE

    Yang, Ping; Liu, Huajun; Chen, Zuhuang; Chen, Lang; Wang, John

    2013-01-01

    A new approach, based on reciprocal space vectors (RSVs), is developed to determine Bravais lattice types and accurate lattice parameters of epitaxial thin films by high-resolution X-ray diffractometry (HR-XRD). The lattice parameters of single crystal substrates are employed as references to correct the systematic experimental errors of RSVs of thin films. The general procedure is summarized, involving correction of RSVs, derivation of raw unit cell, subsequent conversion to the Niggli unit ...

  2. Photovoltaic Technology: The Case for Thin-Film Solar Cells

    OpenAIRE

    Shah, Arvind; Torres, Pedro; Tscharner, Reto; Wyrsch, Nicolas; Keppner, Herbert

    2013-01-01

    The advantages and limitations of photovoltaic solar modules for energy generation are reviewed with their operation principles and physical efficiency limits. Although the main materials currently used or investigated and the associated fabrication technologies are individually described, emphasis is on silicon-based solar cells. Wafer-based crystalline silicon solar modules dominate in terms of production, but amorphous silicon solar cells have the potential to undercut costs owing, for exa...

  3. Research and development of CdTe based thin film PV solar cells

    Science.gov (United States)

    Diso, Dahiru Garba

    The motivation behind this research is to bring cheap, low-cost and clean energy technologies to the society. Colossal use of fossil fuel has created noticeable pollution problems contributing to climate change and health hazards. Silicon based solar cells have dominated the market but it is cost is high due to the manufacturing process. Therefore, the way forward is to develop thin films solar cells using low-cost attractive materials, grown by cheaper, scalable and manufacturable techniques.The aim and objectives of this work is to develop low-cost, high efficiency solar cell using electrodeposition (ED) technique. The material layers include CdS and ZnTe as the window materials, while the absorber material is CdTe. Fabricating a suitable devices for solar energy conversion (i.e. glass/conducting glass/window material/absorber material/metal) structure. Traditional way of fabricating this structure is to grow window material (CdS) using chemical bath deposition (CBD) and absorber material (CdTe) using electrodeposition. However, CBD is a batch process and therefore creates large volumes of Cd-containing waste solutions each time adding high cost in manufacturing process. This research programme is therefore on development of an "All ED-solar cells" structure.Material studies were carried out using photoelectrochemical (PEC) studies, UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, the electrical characterisation of fully fabricated devices was performed using current-voltage (I-V) and capacitance-voltage (C-V) measurements.This research programme has demonstrated that CdS and ZnTe window materials can be electrodeposited and used in thin film solar cell devices. The CdS electrolytic bath can be used for a period of 7 months without discarding it like in the CBD process which usually has life

  4. Back contact buffer layer for thin-film solar cells

    Science.gov (United States)

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  5. Elongated Nanostructures for Radial Junction Thin Film Solar Cells

    NARCIS (Netherlands)

    Kuang, Y.

    2014-01-01

    In solar cell technology, the current trend is to thin down the active absorber layer. The main advantage of a thinner absorber layer primarily is the reduced consumption of material and energy during production, but also the increased production rates and lower cost. While this is of interest to

  6. ORGANIC THIN-FILM SOLAR CELLS: NEXT GENERATION LOW ...

    African Journals Online (AJOL)

    Solar energy has the potential to fulfil an important part of the sustainable energy demand for future power generations. Thereby, low-cost organic photovoltaic systems have come into the international researchfocus during thepast ... polymeric solar cells ultra-thin flexible material can be applied to large surfaces by printing ...

  7. Modeling and Design of a Thin-Film CdTe/Ge Tandem Solar Cell

    Science.gov (United States)

    Sharp, James; Pulfrey, David; Umana-Membreno, Gilberto A.; Faraone, Lorenzo; Dell, John M.

    2012-10-01

    Thin-film cadmium telluride (CdTe) solar cells have found widespread application, with current commercially available module efficiencies reaching 14.4% and production costs falling as low as US 0.75/W_p. Despite the proliferation of this technology, there have been comparatively few developments in research circles in recent years. Rather than attempt to further advance the materials science of CdTe solar cells, it is proposed to realize an efficiency improvement over conventional cells by means of a novel tandem structure. Three such structures are examined herein, and results of simulation using Synopsys Sentaurus TCAD are presented.

  8. Band alignment measurements at heterojunction interfaces in layered thin film solar cells & thermoelectrics

    Science.gov (United States)

    Fang, Fang

    2011-12-01

    Public awareness of the increasing energy crisis and the related serious environmental concerns has led to a significantly growing demand for alternative clean and renewable energy resources. Thin film are widely applied in multiple renewable energy devices owing to the reduced amount of raw materials and increase flexibility of choosing from low-cost candidates, which translates directly into reduced capital cost. This is a key driving force to make renewable technology competitive in the energy market. This thesis is focused on the measurement of energy level alignments at interfaces of thin film structures for renewable energy applications. There are two primary foci: II -VI semiconductor ZnSe/ZnTe thin film solar cells and Bi2Te3/Sb2Te3 thin film structures for thermoelectric applications. In both cases, the electronic structure and energy band alignment at interfaces usually controls the carrier transport behavior and determines the quality of the device. High-resolution photoemission spectroscopy (lab-based XPS & synchrotron-based UPS) was used to investigate the chemical and electronic properties of epitaxial Bi2Te3 and Sb2Te3 thin films, in order to validate the anticipated band alignment at interfaces in Bi 2Te3/Sb2Te3 superlattices as one favoring electron-transmission. A simple, thorough two-step treatment of a chemical etching in dilute hydrochloric acid solution and a subsequent annealing at ˜150°C under ultra-high vacuum environment is established to remove the surface oxides completely. It is an essential step to ensure the measurements on electronic states are acquired on stoichimetric, oxide-free clean surface of Bi 2Te3 and Sb2Te3 films. The direct measurement of valence band offsets (VBO) at a real Sb 2Te3/Bi2Te3 interface is designed based on the Kraut model; a special stacking film structure is prepared intentionally: sufficiently thin Sb2Te3 film on top of Bi2Te 3 that photoelectrons from both of them are collected simultaneously. From a

  9. A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

    Science.gov (United States)

    Adelifard, Mehdi; Darudi, Hosein

    2016-07-01

    There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

  10. Plasmonic versus dielectric enhancement in thin-film solar cells

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole

    2012-01-01

    -film semiconducting material. For a particular case, we show that coupling to the same type of localized slab-waveguide modes can be obtained by a surface modulation consisting of purely dielectric strips. The purely dielectric device turns out to have a significantly higher broadband enhancement factor compared...... to its metallic counterpart. We show that the enhanced normalized short-circuit current for a cell with silicon strips can be increased 4 times compared to the best performance for strips of silver, gold, or aluminium. For this particular case, the simple dielectric grating may outperform its plasmonic...

  11. Thin Film

    African Journals Online (AJOL)

    a

    organic substances. KEY WORDS: Photoelectrocatalysis, Titanium dioxide, Cuprous oxide, Composite thin film, Photo electrode. INTRODUCTION ... reddish p-type semiconductor with a direct band gap of 2.0-2.2 eV [18, 19]. ... Photoelectrocatalytic removal of color from water using TiO2 and TiO2/Cu2O electrodes. Bull.

  12. Development of a thin film solar cell interconnect for the PowerSphere concept

    International Nuclear Information System (INIS)

    Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig H.; Lin, John K.; Scarborough, Stephen E.; Curtis, Henry B.; Kerslake, Thomas W.; Peterson, Todd T.

    2005-01-01

    Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the PowerSphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference

  13. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

    Directory of Open Access Journals (Sweden)

    Gabriel Onno

    2014-02-01

    Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

  14. Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nazir, Adnan, E-mail: adnan.nazir@iit.it [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Toma, Andrea [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Shah, Nazar Abbas [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Panaro, Simone [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Butt, Sajid [Department of Materials Science and Engineering, Institute of Space Technology (IST), Islamabad 44000 (Pakistan); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Sagar, Rizwan ur Rehman [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Raja, Waseem [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Rasool, Kamran [Micro and Nano Devices Group, Department of Metallurgy and Materials Engineering Pakistan, Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad 45650 (Pakistan); Maqsood, Asghari [Department of Physics, Air University, Islamabad (Pakistan)

    2014-10-01

    Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10{sup 6} Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10{sup 3} Ω cm) against a 20% cut in optical transmission.

  15. Controllable Electrochemical Synthesis of Reduced Graphene Oxide Thin-Film Constructed as Efficient Photoanode in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Soon Weng Chong

    2016-01-01

    Full Text Available A controllable electrochemical synthesis to convert reduced graphene oxide (rGO from graphite flakes was introduced and investigated in detail. Electrochemical reduction was used to prepare rGO because of its cost effectiveness, environmental friendliness, and ability to produce rGO thin films in industrial scale. This study aimed to determine the optimum applied potential for the electrochemical reduction. An applied voltage of 15 V successfully formed a uniformly coated rGO thin film, which significantly promoted effective electron transfer within dye-sensitized solar cells (DSSCs. Thus, DSSC performance improved. However, rGO thin films formed in voltages below or exceeding 15 V resulted in poor DSSC performance. This behavior was due to poor electron transfer within the rGO thin films caused by poor uniformity. These results revealed that DSSC constructed using 15 V rGO thin film exhibited high efficiency (η = 1.5211% attributed to its higher surface uniformity than other samples. The addition of natural lemon juice (pH ~ 2.3 to the electrolyte accelerated the deposition and strengthened the adhesion of rGO thin film onto fluorine-doped tin oxide (FTO glasses.

  16. Advanced APCVD-processes for high-temperature grown crystalline silicon thin film solar cells.

    Science.gov (United States)

    Driessen, Marion; Merkel, Benjamin; Reber, Stefan

    2011-09-01

    Crystalline silicon thin film (cSiTF) solar cells based on the epitaxial wafer-equivalent (EpiWE) concept combine advantages of wafer-based and thin film silicon solar cells. In this paper two processes beyond the standard process sequence for cSiTF cell fabrication are described. The first provides an alternative to wet chemical saw damage removal by chemical vapor etching (CVE) with hydrogen chloride in-situ prior to epitaxial deposition. This application decreases the number of process and handling steps. Solar cells fabricated with different etching processes achieved efficiencies up to 14.7%. 1300 degrees C etching temperature led to better cell results than 1200 degrees C. The second investigated process aims for an improvement of cell efficiency by implementation of a reflecting interlayer between substrate and active solar cell. Some characteristics of epitaxial lateral overgrowth (ELO) of a patterned silicon dioxide film in a lab-type reactor constructed at Fraunhofer ISE are described and first solar cell results are presented.

  17. Protein thin film machines.

    Science.gov (United States)

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-12-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fueled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  18. Thin film thermocouples for in situ membrane electrode assembly temperature measurements in a polybenzimidazole-based high temperature proton exchange membrane unit cell

    DEFF Research Database (Denmark)

    Ali, Syed Talat; Lebæk, Jesper; Nielsen, Lars Pleth

    2010-01-01

    This paper presents Type-T thin film thermocouples (TFTCs) fabricated on Kapton (polyimide) substrate for measuring the internal temperature of PBI(polybenzimidazole)-based high temperature proton exchange membrane fuel cell (HT-PEMFC). Magnetron sputtering technique was employed to deposit a 2 mu...... degradation. This Kapton foil with deposited TFTCs was used as sealing inside a PBI (polybenzimidazole)-based single cell test rig, which enabled measurements of in situ temperature variations of the working fuel cell MEA. The performance of the TFTCs was promising with minimal interference to the operation...

  19. Development of a cell culture surface conversion technique using alginate thin film for evaluating effect upon cellular differentiation

    International Nuclear Information System (INIS)

    Nakashima, Y.; Tsusu, K.; Minami, K.; Nakanishi, Y.

    2014-01-01

    Here, we sought to develop a cell culture surface conversion technique that would not damage living cells. An alginate thin film, formed on a glass plate by spin coating of sodium alginate solution and dipping into calcium chloride solution, was used to inhibit adhesion of cells. The film could be removed by ethylenediaminetetraacetate (EDTA) at any time during cell culture, permitting observation of cellular responses to conversion of the culture surface in real time. Additionally, we demonstrated the validity of the alginate thin film coating method and the performance of the film. The thickness of the alginate thin film was controlled by varying the rotation speed during spin coating. Moreover, the alginate thin film completely inhibited the adhesion of cultured cells to the culture surface, irrespective of the thickness of the film. When the alginate thin film was removed from the culture surface by EDTA, the cultured cells adhered to the culture surface, and their morphology changed. Finally, we achieved effective differentiation of C2C12 myoblasts into myotube cells by cell culture on the convertible culture surface, demonstrating the utility of our novel technique

  20. Effect of Grain Boundaries on the Performance of Thin-Film-Based Polycrystalline Silicon Solar Cells: A Numerical Modeling

    Science.gov (United States)

    Chhetri, Nikita; Chatterjee, Somenath

    2018-01-01

    Solar cells/photovoltaic, a renewable energy source, is appraised to be the most effective alternative to the conventional electrical energy generator. A cost-effective alternative of crystalline wafer-based solar cell is thin-film polycrystalline-based solar cell. This paper reports the numerical analysis of dependency of the solar cell parameters (i.e., efficiency, fill factor, open-circuit voltage and short-circuit current density) on grain size for thin-film-based polycrystalline silicon (Si) solar cells. A minority carrier lifetime model is proposed to do a correlation between the grains, grain boundaries and lifetime for thin-film-based polycrystalline Si solar cells in MATLAB environment. As observed, the increment in the grain size diameter results in increase in minority carrier lifetime in polycrystalline Si thin film. A non-equivalent series resistance double-diode model is used to find the dark as well as light (AM1.5) current-voltage (I-V) characteristics for thin-film-based polycrystalline Si solar cells. To optimize the effectiveness of the proposed model, a successive approximation method is used and the corresponding fitting parameters are obtained. The model is validated with the experimentally obtained results reported elsewhere. The experimentally reported solar cell parameters can be found using the proposed model described here.

  1. Development of a cell culture surface conversion technique using alginate thin film for evaluating effect upon cellular differentiation.

    Science.gov (United States)

    Nakashima, Y; Tsusu, K; Minami, K; Nakanishi, Y

    2014-06-01

    Here, we sought to develop a cell culture surface conversion technique that would not damage living cells. An alginate thin film, formed on a glass plate by spin coating of sodium alginate solution and dipping into calcium chloride solution, was used to inhibit adhesion of cells. The film could be removed by ethylenediaminetetraacetate (EDTA) at any time during cell culture, permitting observation of cellular responses to conversion of the culture surface in real time. Additionally, we demonstrated the validity of the alginate thin film coating method and the performance of the film. The thickness of the alginate thin film was controlled by varying the rotation speed during spin coating. Moreover, the alginate thin film completely inhibited the adhesion of cultured cells to the culture surface, irrespective of the thickness of the film. When the alginate thin film was removed from the culture surface by EDTA, the cultured cells adhered to the culture surface, and their morphology changed. Finally, we achieved effective differentiation of C2C12 myoblasts into myotube cells by cell culture on the convertible culture surface, demonstrating the utility of our novel technique.

  2. Cytotoxicity Evaluation of Anatase and Rutile TiO2 Thin Films on CHO-K1 Cells in Vitro

    Directory of Open Access Journals (Sweden)

    Blanca Cervantes

    2016-07-01

    Full Text Available Cytotoxicity of titanium dioxide (TiO2 thin films on Chinese hamster ovary (CHO-K1 cells was evaluated after 24, 48 and 72 h of culture. The TiO2 thin films were deposited using direct current magnetron sputtering. These films were post-deposition annealed at different temperatures (300, 500 and 800 °C toward the anatase to rutile phase transformation. The root-mean-square (RMS surface roughness of TiO2 films went from 2.8 to 8.08 nm when the annealing temperature was increased from 300 to 800 °C. Field emission scanning electron microscopy (FESEM results showed that the TiO2 films’ thickness values fell within the nanometer range (290–310 nm. Based on the results of the tetrazolium dye and trypan blue assays, we found that TiO2 thin films showed no cytotoxicity after the aforementioned culture times at which cell viability was greater than 98%. Independently of the annealing temperature of the TiO2 thin films, the number of CHO-K1 cells on the control substrate and on all TiO2 thin films was greater after 48 or 72 h than it was after 24 h; the highest cell survival rate was observed in TiO2 films annealed at 800 °C. These results indicate that TiO2 thin films do not affect mitochondrial function and proliferation of CHO-K1 cells, and back up the use of TiO2 thin films in biomedical science.

  3. Thermally evaporated thin films of SnS for application in solar cell devices

    International Nuclear Information System (INIS)

    Miles, Robert W.; Ogah, Ogah E.; Zoppi, Guillaume; Forbes, Ian

    2009-01-01

    SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS 2 , Sn 2 S 3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto glass and SnO 2 :coated glass substrates with the aim of optimising the properties of the material for use in photovoltaic solar cell device structures. In particular the effects of source temperature, substrate temperature, deposition rate and film thickness on the chemical and physical properties of the layers were investigated. Energy dispersive X-ray analysis was used to determine the film composition, X-ray diffraction to determine the phases present and structure of each phase, transmittance and reflectance versus wavelength measurements to determine the energy bandgap and scanning electron microscopy to observe the surface topology and topography and the properties correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free, conformal to the substrate and that consist of densely packed columnar grains. The composition, phases present and the optical properties of the layers deposited were found to be highly sensitive to the deposition conditions. Energy bandgaps in the range 1.55 eV-1.7 eV were obtained for a film thickness of 0.8 μm, and increasing the film thickness to > 1 μm resulted in a reduction of the energy bandgap to less than 1.55 eV. The applicability of using these films in photovoltaic solar cell device structures is also discussed.

  4. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  5. Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

    Directory of Open Access Journals (Sweden)

    Michael Powalla

    2007-01-01

    14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules. This contribution provides an overview of the basic technologies for CdTe and CIS modules, the research and development (R&D issues, production technology and capacities, the module performance in long-term outdoor testing, and their use in installations.

  6. Photoanode for Aqueous Dye-Sensitized Solar Cells based on a Novel Multicomponent Thin Film.

    Science.gov (United States)

    Husmann, Samantha; Lima, Lucas F; Roman, Lucimara S; Zarbin, Aldo J G

    2018-02-13

    Most of the dye-sensitized solar cells (DSSCs) developed so far use organic electrolytes and water-sensible sensitizers. The search for aqueous DSSCs, a promising technology for solar-energy conversion, implies finding materials that are stable in aqueous solution. In this study, Prussian blue (PB) was utilized as an innovative sensitizer in a photoanode for DSSCs and a novel synthetic approach to a carbon nanotubes/TiO 2 /PB nanocomposite thin film was developed. The photoresponse was evaluated in a total aqueous electrolyte, and photocurrents of 600 μA cm -2 were achieved. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Passivation effect of water vapour on thin film polycrystalline Si solar cells

    Czech Academy of Sciences Publication Activity Database

    Pikna, Peter; Müller, Martin; Becker, C.; Fejfar, Antonín

    2016-01-01

    Roč. 213, č. 7 (2016), s. 1969-1975 ISSN 1862-6300 R&D Projects: GA MŠk LM2015087; GA ČR GA13-12386S Grant - others:AV ČR(CZ) DAAD-16-27 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : passivation, * plasma hydrogenation * silicon * solar cells * thin films * water vapour Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.775, year: 2016

  8. Fabrication and characterization of CuInSe₂CdS/ZnO thin film solar cells

    Directory of Open Access Journals (Sweden)

    V. Alberts

    1997-07-01

    Full Text Available Efficient thin film solar cells were fabricated using CulnSe absorber fi lm s obtained from the selenization (in H,Se/Ar atmosphere o f InSe/Cu and InSe/Cu/lnSe metallic alloys. The material properties o f the CuInSe₂ layers and efficiencies of completed devices were critically influenced by the nature of the metallic alloys before the selenization step. Optimum material properties were obtained when InSe/Cu/InSe alloys were selenized in H₂Se/Ar while ramping the temperature between 200 °C and 400 °C.

  9. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  10. Efficiency simulations of thin film chalcogenide photovoltaic cells for different indoor lighting conditions

    International Nuclear Information System (INIS)

    Minnaert, B.; Veelaert, P.

    2011-01-01

    Photovoltaic (PV) energy is an efficient natural energy source for outdoor applications. However, for indoor applications, the efficiency of PV cells is much lower. Typically, the light intensity under artificial lighting conditions is less than 10 W/m 2 as compared to 100-1000 W/m 2 under outdoor conditions. Moreover, the spectrum is different from the outdoor solar spectrum. In this context, the question arises whether thin film chalcogenide photovoltaic cells are suitable for indoor use. This paper contributes to answering that question by comparing the power output of different thin film chalcogenide solar cells with the classical crystalline silicon cell as reference. The comparisons are done by efficiency simulation based on the quantum efficiencies of the solar cells and the light spectra of typical artificial light sources i.e. an LED lamp, a 'warm' and a 'cool' fluorescent tube and a common incandescent and halogen lamp, which are compared to the outdoor AM 1.5 spectrum as reference.

  11. Carrier collection losses in interface passivated amorphous silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Neumüller, A., E-mail: alex.neumueller@next-energy.de; Sergeev, O.; Vehse, M.; Agert, C. [NEXT ENERGY EWE Research Centre for Energy Technology at the University of Oldenburg, Carl-von-Ossietzky-Straße 15, 26129 Oldenburg (Germany); Bereznev, S.; Volobujeva, O. [Department of Materials Science, Tallinn University of Technology, Ehitajate Tee 5, Tallinn 19086 (Estonia); Ewert, M.; Falta, J. [Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany); MAPEX Center for Materials and Processes, University of Bremen, 28359 Bremen (Germany)

    2016-07-25

    In silicon thin-film solar cells the interface between the i- and p-layer is the most critical. In the case of back diffusion of photogenerated minority carriers to the i/p-interface, recombination occurs mainly on the defect states at the interface. To suppress this effect and to reduce recombination losses, hydrogen plasma treatment (HPT) is usually applied. As an alternative to using state of the art HPT we apply an argon plasma treatment (APT) before the p-layer deposition in n-i-p solar cells. To study the effect of APT, several investigations were applied to compare the results with HPT and no plasma treatment at the interface. Carrier collection losses in resulting solar cells were examined with spectral response measurements with and without bias voltage. To investigate single layers, surface photovoltage and X-ray photoelectron spectroscopy (XPS) measurements were conducted. The results with APT at the i/p-interface show a beneficial contribution to the carrier collection compared with HPT and no plasma treatment. Therefore, it can be concluded that APT reduces the recombination centers at the interface. Further, we demonstrate that carrier collection losses of thin-film solar cells are significantly lower with APT.

  12. Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

    Science.gov (United States)

    Gułkowski, Sławomir; Krawczak, Ewelina

    2017-10-01

    Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS) with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

  13. Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

    Directory of Open Access Journals (Sweden)

    Gułkowski Sławomir

    2017-01-01

    Full Text Available Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

  14. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  15. thin films

    Indian Academy of Sciences (India)

    The anionic precursor was 1% H2O2 solution. Both the cationic and anionic precursors were kept at room temperature (∼300 K). One SILAR cycle consists of two steps: (i) adsorption of Sn4+ ions on the substrate surface for 20 s and (ii) reaction with H2O2 solution for 40 s to form stable SnO2:H2O thin film on the substrate.

  16. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  17. Cell proliferation on modified DLC thin films prepared by plasma enhanced chemical vapor deposition.

    Science.gov (United States)

    Stoica, Adrian; Manakhov, Anton; Polčák, Josef; Ondračka, Pavel; Buršíková, Vilma; Zajíčková, Renata; Medalová, Jiřina; Zajíčková, Lenka

    2015-06-12

    Recently, diamondlike carbon (DLC) thin films have gained interest for biological applications, such as hip and dental prostheses or heart valves and coronary stents, thanks to their high strength and stability. However, the biocompatibility of the DLC is still questionable due to its low wettability and possible mechanical failure (delamination). In this work, DLC:N:O and DLC: SiOx thin films were comparatively investigated with respect to cell proliferation. Thin DLC films with an addition of N, O, and Si were prepared by plasma enhanced CVD from mixtures of methane, hydrogen, and hexamethyldisiloxane. The films were optically characterized by infrared spectroscopy and ellipsometry in UV-visible spectrum. The thickness and the optical properties were obtained from the ellipsometric measurements. Atomic composition of the films was determined by Rutherford backscattering spectroscopy combined with elastic recoil detection analysis and by x-ray photoelectron spectroscopy. The mechanical properties of the films were studied by depth sensing indentation technique. The number of cells that proliferate on the surface of the prepared DLC films and on control culture dishes were compared and correlated with the properties of as-deposited and aged films. The authors found that the level of cell proliferation on the coated dishes was high, comparable to the untreated (control) samples. The prepared DLC films were stable and no decrease of the biocompatibility was observed for the samples aged at ambient conditions.

  18. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  19. Laser textured substrates for light in-coupling in thin-film solar cells

    Science.gov (United States)

    Chakanga, Kambulakwao; Siepmann, Ortwin; Sergeev, Oleg; Geißendörfer, Stefan; von Maydell, Karsten; Agert, Carsten

    2014-03-01

    In this work we investigate the use of a picosecond (ps) laser used for monolithic connection to pattern glass substrates to achieve light in-coupling in silicon thin film solar cells. We present our results on the patterning of three commercially available and frequently used multi-component glasses Corning EAGLE XG®, Schott BOROFLOAT® 33 and Saint-Gobain SGG DIAMANT®. We find that the different glass structural components influence the degree of texturing obtained. This can be attributed to the different laser induced electron collision times and recombination rates, and thus the critical electron density evolution leading to ablation. Thus the ablated crater profile is glass composition dependent. The surface texture is altered from periodic to random with decreasing scribing speed. The transmission of the textured substrates gradually decreases while the reflection increases as a consequence of the topological and morphological changes. The angular resolved measurements illustrate that highly textured substrates scatter the light towards greater angles. This demonstrates potential for the application in substrate configuration (nip) thin film solar cells, as the scattering can increase the optical path, and hence the absorption in the absorber layer. Simulations of periodically textured glass substrates demonstrate a focused optical generation rate near the front contact and absorber layer interface. The influence of the modified refractive index region on the optical generation rate and reflection depends on the crater profile. The reflection is generally reduced when a periodic texture in the micrometre range is implemented.

  20. Spatially Resolved Cathodoluminescence of CdTe Thin Films and Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M. J.; Metzger, W.; Gessert, T. A.; Albin, D. S.; Al-Jassim, M. M.

    2003-05-01

    We have investigated the spatial distribution of different transitions identified in the emission spectra of CdTe thin films and solar cells by cathodoluminescence spectroscopic imaging (CLSI). Prior to back-contact deposition, the spectra are dominated by excitons (X) and donor-to-acceptor (DAP) transitions. After contacting, Cu acceptor states are found in addition to the X and DAP recombination processes. A very systematic behavior found in CdTe is that DAP transitions occur preferentially at grain boundaries (GBs). The distribution of these states responsible for the passivation of GBs is not affected by further processing, although additional levels participate in the recombination process. We believe that this stability is one of the reasons for the success of thin-film CdTe solar cells. Estimates of the densities of different donors and acceptors participating in the recombination process are possible from the analysis of the evolution of the emission spectra with the excitation level. It is found that the back contact suppresses some intrinsic acceptors (associated with the A center) near the back-contact interface and, therefore, Cu acceptor states should be responsible for the p-typeness of the back surface more than a reduction of compensation. CLSI measurements are shown to be helpful in understanding the physics of back-contact formation.

  1. Ion beam analysis of Cu(In,Ga)Se2 thin film solar cells

    Science.gov (United States)

    Karydas, A. G.; Streeck, C.; Radovic, I. Bogdanovic; Kaufmann, C.; Rissom, T.; Beckhoff, B.; Jaksic, M.; Barradas, N. P.

    2015-11-01

    The present work investigates the potential of ion beam analysis (IBA) techniques such as the Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) using helium ions to provide quantitative in-depth elemental analysis of various types of Cu(In,Ga)Se2 thin films. These films with a thickness of about 2 μm are used as absorber layers in photovoltaic devices with continuously increasing the performance of this technology. The preparation process generally aims to obtain an in-depth gradient of In and Ga concentrations that optimizes the optoelectronic and electrical properties of the solar cell. The measurements were performed at directly accessible single or double layered CIGS absorbers and at buried absorbers in completed thin film solar cells. The IBA data were analyzed simultaneously in order to derive best fitted profiles that match all experimental RBS and PIXE spectra. For some samples elemental profiles deduced form synchrotron based, reference free grazing incidence X-ray fluorescence analysis were compared with the IBA results and an overall good agreement was observed within quoted uncertainties.

  2. Thin film solar cell and its production method; Hakumaku taiyo denchi oyobi sono seiho

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, H.; Yamamoto, K.; Mishima, T.; Matsuda, T. [Daido Hokusan Co. Ltd., Osaka (Japan). Sakai Lab.

    1997-01-17

    An attempt has been made to replace the single crystal silicon substrate for other inexpensive substrate coated with Si thin film for cost saving in the silicon solar cell production. It was found, however, a big difference in thermal expansion coefficient between the substrate and Si brought about a big warp of the substrate when the Si film was made thick enough for solar cell use. This invention solves the problem. The Si thin film is grown through a mask having many holes with constant interval instead of being grown as a continuous layer. The Si film is, therefore, formed in island structure which rises from many holes. The island structure crystals exist, being separated from each other. They consist of discontinuous points. So that they can expand thermally in accordance with the thermal expansion of the substrate. Even if there is a difference in thermal expansion between the inexpensive substrate and Si crystal film, little warp takes place in the laminate. 8 figs.

  3. Novel concepts for low-cost and high-efficient thin film solar cells

    Science.gov (United States)

    Gómez, D.; Menéndez, A.; Sánchez, P.; Martínez, A.; Andrés, L. J.; Menéndez, M. F.; Campos, N.; García, A.; Sánchez, B.

    2011-09-01

    This work presents the activities carried out at ITMA Materials Technology related to the building integration of thin film (TF) photovoltaics (PV). Three different approaches have been developed in order to achieve high efficient solar cells at low manufacturing costs: (i) a new route for manufacturing monolithical silicon based thin film solar cells on building materials, (ii) the use of metallic nanoparticles for light trapping (plasmonic effects and light scattering) and (iii) the luminescent sol-gel coating on glass for solar concentration. In the first case, amorphous silicon modules (single junction) have been successfully manufactured at lab scale on steel and commercial ceramic substrates with efficiencies of 5.4% and 4.0%, respectively. Promising initial attempts have been also made in ethylene tetrafluoroethylene (ETFE), a polymer with high potential in textile architecture. In a similar way, the development of nanotechnology based coatings (metallic nanoparticles and luminescent materials) represent the most innovative part of the work and some preliminary results are showed.

  4. Effect of Sheet Resistance and Morphology of ITO Thin Films on Polymer Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Ram Narayan Chauhan

    2012-01-01

    Full Text Available Solar cell fabrication on flexible thin plastic sheets needs deposition of transparent conducting anode layers at low temperatures. ITO thin films are deposited on glass by RF sputtering at substrate temperature of 70∘C and compare their phase, morphology, optical, and electrical properties with commercial ITO. The films contain smaller nanocrystallites in (222 preferred orientation and exhibit comparable optical transmittance (~95% in the wavelength range of 550–650 nm, but high sheet resistance of ~103 Ω/□ (the value being ~36 Ω/□ for commercial ITO.The polymer solar cells with PEDOT: PSS and P3HT: PCBM layers realized on RF sputtered vis-a-vis commercial ITO thin films are shown to display a marginal difference in power conversion efficiency, low fill factor, and low open-circuit voltage but increased short-circuit current density. The decrease in fill factor, open-circuit voltage is compensated by increased short-circuit current. Detailed study is made of increased short-circuit current density.

  5. On-Orbit Demonstration of a Lithium-Ion Capacitor and Thin-Film Multijunction Solar Cells

    Science.gov (United States)

    Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Kobayashi, Yuki; Sakai, Tomohiko; Toyota, Hiroyuki; Takahashi, Yu; Murashima, Mio; Uno, Masatoshi; Imaizumi, Mitsuru

    2014-08-01

    This paper describes an on-orbit demonstration of the Next-generation Small Satellite Instrument for Electric power systems (NESSIE) on which an aluminum- laminated lithium-ion capacitor (LIC) and a lightweight solar panel called KKM-PNL, which has space solar sheets using thin-film multijunction solar cells, were installed. The flight data examined in this paper covers a period of 143 days from launch. We verified the integrity of an LIC constructed using a simple and lightweight mounting method: no significant capacitance reduction was observed. We also confirmed that inverted metamorphic multijunction triple-junction thin-film solar cells used for evaluation were healthy at 143 days after launch, because their degradation almost matched the degradation predictions for dual-junction thin-film solar cells.

  6. Photonic and plasmonic structures for enhancing efficiency of thin film silicon solar cells

    Science.gov (United States)

    Pattnaik, Sambit

    Crystalline silicon solar cells use high cost processing techniques as well as thick materials that are ˜ 200µm thick to convert solar energy into electricity. From a cost viewpoint, it is highly advantageous to use thin film solar cells which are generally made in the range of 0.1-3µm in thickness. Due to this low thickness, the quantity of material is greatly reduced and so is the number and complexity of steps involved to complete a device, thereby allowing a continuous processing capability improving the throughput and hence greatly decreasing the cost. This also leads to faster payback time for the end user of the photovoltaic panel. In addition, due to the low thickness and the possibility of deposition on flexible foils, the photovoltaic (PV) modules can be flexible. Such flexible PV modules are well suited for building-integrated applications and for portable, foldable, PV power products. For economical applications of solar cells, high efficiency is an important consideration. Since Si is an indirect bandgap material, a thin film of Si needs efficient light trapping to achieve high optical absorption. The previous work in this field has been mostly based on randomly textured back reflectors. In this work, we have used a novel approach, a periodic photonic and plasmonic structure, to optimize current density of the devices by absorbing longer wavelengths without hampering other properties. The two dimensional diffraction effect generated by a periodic structure with the plasmonic light concentration achieved by silver cones to efficiently propagate light in the plane at the back surface of a solar cell, achieves a significant increase in optical absorption. Using such structures, we achieved a 50%+ increase in short circuit current in a nano-crystalline (nc-Si) solar cell relative to stainless steel. In addition to nc-Si solar cells on stainless steel, we have also used the periodic photonic structure to enhance optical absorption in amorphous cells and

  7. Sputter Deposited TiOx Thin-Films as Electron Transport Layers in Organic Solar Cells

    DEFF Research Database (Denmark)

    Mirsafaei, Mina; Bomholt Jensen, Pia; Lakhotiya, Harish

    solar cells that eliminates the need for light soaking and still allows for integration on flexible plastic substrates, which is beneficial for roll-to-roll mass production of flexible organic solar cells. 1. Steim, R.; Kogler, F. R.; Brabec, C. J., Interface materials for organic solar cells. Journal......The use of interfacial layers in organic solar cells has been investigated intensively over the past years, as it has a strong impact on both the power conversion efficiency and stability of the devices. Among the systems investigated are for example alkali salts, ionic liquids, neutral polymers...... transparency and favorable energy-level alignment with many commonly used electron-acceptor materials. There are several methods available for fabricating compact TiOx thin-films for use in organic solar cells, including sol-gel solution processing, spray pyrolysis and atomic-layer deposition; however...

  8. Thin film galvanic cell with RbAg4I5 solid electrolyte

    International Nuclear Information System (INIS)

    Bodnaruk, L.I.; Danilov, A.V.; Kulinkovich, V.E.; Aleskovskij, V.B.

    1975-01-01

    In order to decrease the size and weight and to increase the specific capacity and energy of galvanic cells, some solid electrolytes in the form of thin films are proposed. The galvanic cells were prepared by a combined method: the cathodic and anodic materials (Te and Ag) were evaporated under vacuo to cover an electrolyte layer, the latter being obtained by impregnating the porous materials with RbAg 4 I 5 acetonic solution. The most specific charge curves of the galvanic cells at various current densities are given: specific energy of the samples was 0.2 to 0.7 watt-h/kg, their capacity being 0.1 to 0.2 mah. Behaviour of the cells when stored (that of Ag(RbAg 4 I 5 ) interface in particular) was investigated, namely, the effect of the storage time on the capacity and internal resistance of the galvanic cell

  9. Laser applications in thin-film photovoltaics

    OpenAIRE

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2009-01-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are descri...

  10. Structural and optical properties of electrodeposited culnSe2 thin films for photovoltaic solar cells

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.; Galiano, F.

    1990-01-01

    Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs

  11. Effect of Gaussian doping profile on the performance of a thin film polycrystalline solar cell

    Directory of Open Access Journals (Sweden)

    Ouali A.

    2012-06-01

    Full Text Available A two-dimensional (2D analytical model based on the Green’s function method is applied to an n+-p thin film polycrystalline solar cell that allows us to calculate the conversion efficiency. This model considers the effective Gaussian doping profile in the p region in order to improve cell efficiency. The dependence of mobility and lifetime on grain doping is also investigated. This model is implemented through a simulation program in order to optimize conversion efficiency while varying thickness and doping profile in the base region of the cell. Compared with n+-p standard structure, our proposed structure shows a 43% improvement in conversion efficiency for a polycrystalline solar cell.

  12. Intercalation crystallization of phase-pure α-HC(NH₂)₂PbI₃ upon microstructurally engineered PbI₂ thin films for planar perovskite solar cells.

    Science.gov (United States)

    Zhou, Yuanyuan; Yang, Mengjin; Kwun, Joonsuh; Game, Onkar S; Zhao, Yixin; Pang, Shuping; Padture, Nitin P; Zhu, Kai

    2016-03-28

    The microstructure of the solid-PbI2 precursor thin film plays an important role in the intercalation crystallization of the formamidinium lead triiodide perovskite (α-HC(NH2)2PbI3). It is shown that microstructurally engineered PbI2 thin films with porosity and low crystallinity are the most favorable for conversion into uniform-coverage, phase-pure α-HC(NH2)2PbI3 perovskite thin films. Planar perovskite solar cells fabricated using these thin films deliver power conversion efficiency (PCE) up to 13.8%.

  13. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    International Nuclear Information System (INIS)

    Shao, Guojian; Lou, Chaogang; Kang, Jian; Zhang, Hao

    2015-01-01

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency

  14. High efficiency thin film solar cells grown by molecular beam epitaxy (HEFTY)

    Energy Technology Data Exchange (ETDEWEB)

    Mason, N.B.; Barnham, K.W.J.; Ballard, I.M.; Zhang, J. [Imperial College, London (United Kingdom)

    2006-05-04

    The project sought to show the UK as a world leader in the field of thin film crystalline solar cells. A premise was that the cell design be suitable for large-scale manufacturing and provide a basis for industrial exploitation. The study demonstrated (1) that silicon films grown at temperatures suitable for deposition on glass by Gas Phase Molecular Beam Epitaxy gives better PV cells than does Ultra Low Pressure Chemical Vapor Deposition; (2) a conversion energy of 15 per cent was achieved - the project target was 18 per cent and (3) one of the highest reported conversion efficiencies for a 15 micrometre silicon film was achieved. The study was carried out by BP Solar Limited under contract to the DTI.

  15. Aluminum–Titanium Alloy Back Contact Reducing Production Cost of Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Hsin-Yu Wu

    2016-11-01

    Full Text Available In this study, metal films are fabricated by using an in-line reactive direct current magnetron sputtering system. The aluminum–titanium (AlTi back contacts are prepared by changing the pressure from 10 mTorr to 25 mTorr. The optical, electrical and structural properties of the metal back contacts are investigated. The solar cells with the AlTi had lower contact resistance than those with the silver (Ag back contact, resulting in a higher fill factor. The AlTi contact can achieve a solar cell conversion efficiency as high as that obtained from the Ag contact. These findings encourage the potential adoption of AlTi films as an alternative back contact to silver for silicon thin-film solar cells.

  16. Thin Film CIGS Solar Cells, Photovoltaic Modules, and the Problems of Modeling

    Directory of Open Access Journals (Sweden)

    Antonino Parisi

    2013-01-01

    Full Text Available Starting from the results regarding a nonvacuum technique to fabricate CIGS thin films for solar cells by means of single-step electrodeposition, we focus on the methodological problems of modeling at cell structure and photovoltaic module levels. As a matter of fact, electrodeposition is known as a practical alternative to costly vacuum-based technologies for semiconductor processing in the photovoltaic device sector, but it can lead to quite different structural and electrical properties. For this reason, a greater effort is required to ensure that the perspectives of the electrical engineer and the material scientist are given an opportunity for a closer comparison and a common language. Derived parameters from ongoing experiments have been used for simulation with the different approaches, in order to develop a set of tools which can be used to put together modeling both at single cell structure and complete module levels.

  17. Development of Earth-Abundant and Non-Toxic Thin-Film Solar Cells

    Science.gov (United States)

    Park, Helen Hejin

    Although solar energy is the most abundant energy resource available, photovoltaic solar cells must consist of sufficiently abundant and environmentally friendly elements, for scalable low-cost production to provide a major amount of the world's energy supply. However, scalability is limited in current thin-film solar cell technologies based on Cu(In,Ga)(S,Se)2 and CdTe due to scarce, expensive, and toxic elements. Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. Solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO were studied by varying the synthesis conditions of the SnS and Zn(O,S) layers. Annealing SnS in hydrogen sulfide increased the mobility by more than one order of magnitude, and improved the power conversion efficiency of the solar cell devices. Solar cell performance can be further optimized by adjusting the stoichiometry of Zn(O,S), and by tuning the electrical properties of Zn(O,S) through various in situ or post-annealing treatments. Zn(O,S) can be post-annealed in oxygen atmosphere or doped with nitrogen, by ammonium hydroxide or ammonia gas, during the ALD growth to reduce the carrier concentration, which can be critical for reducing interface recombination at the p-n junction. High carrier concentration buffer layers can be critical for reducing contact resistance with the ITO layer. Zn(O,S) can also be incorporated with aluminum by trimethylaluminum (TMA) doses to either increase or decrease the carrier concentration based on the stoichiometry of Zn(O,S).

  18. A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

    NARCIS (Netherlands)

    Vasudevan, R.A.; Thanawala, Z; Han, L.; Buijs, Thom; Tan, H.; Deligiannis, D.; Perez Rodriguez, P.; Digdaya, I.A.; Smith, W.A.; Zeman, M.; Smets, A.H.M.

    2016-01-01

    A hybrid tandem solar cell consisting of a thin-film, nanocrystalline silicon top junction and a siliconheterojunction bottom junction is proposed as a supporting solar cell for photoelectrochemical applications.Tunneling recombination junction engineering is shown to be an important consideration

  19. Utilization of geometric light trapping in thin film silicon solar cells: simulations and experiments, Progress in Photovoltaics: : Research and Applications

    NARCIS (Netherlands)

    C. J. M. van Rijn; J. K. Rath; R. E. I. Schropp; Piet Sonneveld; J. Baggerman; M. M. de Jong

    2012-01-01

    In this study, we present a new light absorption enhancement method for p-i-n thin film silicon solar cells using pyramidal surface structures, larger than the wavelength of visible light. Calculations show a maximum possible current enhancement of 45% compared with cells on a flat substrate. We

  20. Thin-Film Photovoltaic Cells: Long-Term Metal(loid) Leaching at Their End-of-Life

    NARCIS (Netherlands)

    Zimmermann, Y.S.; Schäffer, A.; Corvini, P.F.X.; Lenz, M.

    2013-01-01

    The photovoltaic effect of thin-film copper indium gallium selenide cells (CIGS) is conferred by the latter elements. Organic photovoltaic cells (OPV), relying on organic light-absorbing molecules, also contain a variety of metals (e.g., Zn, Al, In, Sn, Ag). The environmental impact of such

  1. Quantum efficiency as a device-physics interpretation tool for thin-film solar cells

    Science.gov (United States)

    Nagle, Timothy J.

    2007-12-01

    Thin-film solar cells made from CdTe and CIGS p-type absorbers are promising candidates for generating pollution-free electricity. The challenge faced by the thin-film photovoltaics (PV) community is to improve the electrical properties of devices, without straying from low-cost, industry-friendly techniques. This dissertation will focus on the use of quantum-efficiency (QE) measurements to deduce the device physics of thin-film devices, in the hope of improving electrical properties and efficiencies of PV materials. Photons which are absorbed, but not converted into electrical energy can modify the energy bands in the solar cell. Under illumination, photoconductivity in the CdS window layer can result in bands different from those in the dark. QE data presented here was taken under a variety of light-bias conditions. These results suggest that 0.10 sun of white-light bias incident on the CdS layer is usually sufficient to achieve accurate QE results. QE results are described by models based on carrier collection by drift and diffusion, and photon absorption. These models are sensitive to parameters such as carrier mobility and lifetime. Comparing calculated QE curves with experiments, it was determined that electron lifetimes in CdTe are less than 0.1 ns. Lifetime determinations also suggest that copper serves as a recombination center in CdTe. The spatial uniformity of QE results has been investigated with the LBIC apparatus, and several experiments are described which investigate cell uniformity. Electrical variations that occur in solar cells often occur in a nonuniform fashion, and can be detected with the LBIC apparatus. Studies discussed here include investigation of patterned deposition of Cu in back-contacts, the use of high-resistivity TCO layers to mitigate nonuniformity, optical effects, and local shunts. CdTe devices with transparent back contacts were also studied with LBIC, including those that received a strong bromine/dichrol/hydrazine (BDH) etch

  2. Transparent TiO2 nanowire networks via wet corrosion of Ti thin films for dye-sensitized solar cells

    Science.gov (United States)

    Shin, Eunhye; Jin, Saera; Hong, Jongin

    2017-09-01

    Transparent TiO2 nanowire networks were prepared by corrosion of Ti thin films on F-doped SnO2 glass substrates in an alkaline (potassium hydroxide: KOH) solution. The formation of the porous TiO2 nanostructures from the Ti thin films was thoroughly investigated. Dye-sensitized solar cells with a photoanode of 1.2-μm-thick nanowire networks exhibit an average optical transmittance of 40% in the visible light region and a power conversion efficiency of 1.0% under one sun illumination.

  3. Recent Progress in CuInS2 Thin-Film Solar Cell Research at NASA Glenn

    Science.gov (United States)

    Jin, M. H.-C.; Banger, K. K.; Kelly, C. V.; Scofield, J. H.; McNatt, J. S.; Dickman, J. E.; Hepp, A. F.

    2005-01-01

    The National Aeronautics and Space Administration (NASA) is interested in developing low-cost highly efficient solar cells on light-weight flexible substrates, which will ultimately lower the mass-specific power (W/kg) of the cell allowing extra payload for missions in space as well as cost reduction. In addition, thin film cells are anticipated to have greater resistance to radiation damage in space, prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing. The first major thin film solar cell was the "CdS solar cell" - a heterojunction between p-type CuxS and n-type CdS. The research on CdS cells started in the late 1950s and the efficiency in the laboratory was up to about 10 % in the 1980s. Today, three different thin film materials are leading the field. They include amorphous Si, CdTe, and Cu(In,Ga)Se2 (CIGS). The best thin film solar cell efficiency of 19.2 % was recently set by CIGS on glass. Typical module efficiencies, however, remain below 15 %.

  4. Fabrication of thin film CZTS solar cells with Pulsed Laser Deposition

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo

    such kind of material since many parameters can modify the optical and electronic properties: grain boundaries, point defects, disorder and secondary phases are just a few. When the CZTS layer is integrated in the solar cell, interface physics can also become very significant to the final device efficiency...... behind the Quantum Efficiency (QE) curve. What do I learn by reading this thesis? You will learn how to deposit a thin film CZTS absorber layer with Pulsed Laser Deposition with the desired composition. In addition, you will see how material transfer in PLD, which is generally believed...... solar cells, there is almost no point in reading it (and they are the vast majority). Vox auctoritatis : "[..] the thickness of annealed films was 1:7μm for CZTSSe, and 0:9μm for CZTS (significant cracks will develop for a thicker CZTS lm).", from a foot-note in IBM's [34], Dec. 2015. And I really wish...

  5. Perovskite Thin Film Solar Cells Based on Inorganic Hole Conducting Materials

    Directory of Open Access Journals (Sweden)

    Pan-Pan Zhang

    2017-01-01

    Full Text Available Organic-inorganic metal halide perovskites have recently shown great potential for application, due to their advantages of low-cost, excellent photoelectric properties and high power conversion efficiency. Perovskite-based thin film solar cells have achieved a power conversion efficiency (PCE of up to 20%. Hole transport materials (HTMs are one of the most important components of perovskite solar cells (PSCs, having functions of optimizing interface, adjusting the energy match, and helping to obtain higher PCE. Inorganic p-type semiconductors are alternative HTMs due to their chemical stability, higher mobility, high transparency in the visible region, and applicable valence band (VB energy level. This review analyzed the advantages, disadvantages, and development prospects of several popular inorganic HTMs in PSCs.

  6. Kelvin Probe Measurements on Solar Cells and Other Thin Film Devices

    Science.gov (United States)

    Delk, John; Dils, D. W.; Lush, G. B.; Mackey, Willie R. (Technical Monitor)

    2001-01-01

    The Kelvin Probe (KP) has been used for years to measure the surface potential of metals and semiconductors. The KP is an elegantly simple but powerful tool invented by Lord Kelvin around the turn of the century. Using changes in surface potentials as a result of changing the intensity and wavelength of illumination, the KP returns data on material parameters such as band gap energies and the energy levels of interface states. We have employed the KP in the study of CdTe-based solar cells and quantum dot-based solar cells, as well as other thin-film devices. We hope eventually that the KP will be used as an in-line testing station for a fabrication process so that unfinished devices that will not meet requirements can be thrown out before the processing is completed, thus saving resources. Results of these studies will be presented.

  7. Perovskite solar cells based on nanocolumnar plasma-deposited ZnO thin films.

    Science.gov (United States)

    Ramos, F Javier; López-Santos, Maria C; Guillén, Elena; Nazeeruddin, Mohammad Khaja; Grätzel, Michael; Gonzalez-Elipe, Agustin R; Ahmad, Shahzada

    2014-04-14

    ZnO thin films having a nanocolumnar microstructure are grown by plasma-enhanced chemical vapor deposition at 423 K on pre-treated fluorine-doped tin oxide (FTO) substrates. The films consist of c-axis-oriented wurtzite ZnO nanocolumns with well-defined microstructure and crystallinity. By sensitizing CH3NH3PbI3 on these photoanodes a power conversion of 4.8% is obtained for solid-state solar cells. Poly(triarylamine) is found to be less effective when used as the hole-transport material, compared to 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), while the higher annealing temperature of the perovskite leads to a better infiltration in the nanocolumnar structure and an enhancement of the cell efficiency. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Annealing enhancement effect by light illumination on proton irradiated Cu(In, Ga)Se2 thin-film solar cells

    International Nuclear Information System (INIS)

    Kawakita, Shirou; Imaizumi, Mitsuru; Matsuda, Sumio; Yamaguchi, Masafumi; Kushiya, Katsumi; Ohshima, Takeshi; Itoh, Hisayoshi

    2002-01-01

    In this paper, we investigated the high radiation tolerance of copper indium gallium di-selenide (CIGS) thin-film solar cells by conducting in situ measurements of short circuit current and open circuit voltage of CIGS thin-film solar cells during and after proton irradiation under short circuit condition. We found that the annealing rate of proton-induced defects in CIGS thin-film solar cells under light illumination with an AM0 solar simulator is higher than that under dark conditions. The activation energy of proton-induced defects in the CIGS thin-film solar cells with (without) light illumination is 0.80 eV (0.92 eV), which implies on enhanced defect annealing rate in CIGS thin-film solar cells due to minority-carrier injection. (author)

  9. Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Nima E. Gorji

    2015-01-01

    Full Text Available The band gap, grain size, and topography of a Cu(In,GaSe2 (CIGSe thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV and atomic force microscopy (AFM techniques. From the steep increase in SPV signal the band gap of the CIGSe absorber, In2S3 and ZnO layers are extracted and found to be 1.1, 1.3 and 2.6 eV, respectively. Already below the band gap of ZnO layer, a slight SPV response at 1.40 eV photon energies is observed indicating the presence of deep donor states. The root mean square (rms of the surface roughness is found to be 37.8 nm from AFM surface topography maps. The grain sizes are almost uniform and smaller than 1 μm.

  10. Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Miriam Israelowitz

    2014-01-01

    Full Text Available Nanoparticle (NP arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal’s free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost-effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage ϕ of 7% is observed. Scanning electron microscopy of interface morphologies revealed that for low ϕ, particles are well separated, resulting in broadband PE. At higher ϕ, formation of particle strings and clusters causes red-shifting of the PE peak and a narrower spectral response.

  11. Doped nanocrystalline silicon oxide for use as (intermediate) reflecting layers in thin-film silicon solar cells

    NARCIS (Netherlands)

    Babal, P.

    2014-01-01

    In summary, this thesis shows the development and nanostructure analysis of doped silicon oxide layers. These layers are applied in thin-film silicon single and double junction solar cells. Concepts of intermediate reflectors (IR), consisting of silicon and/or zinc oxide, are applied in tandem

  12. Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers

    NARCIS (Netherlands)

    Si, F.T.; Isabella, O.; Zeman, M.

    2017-01-01

    Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric

  13. Surface and interface characterization of thin-film silicon solar cell structures

    Energy Technology Data Exchange (ETDEWEB)

    Gerlach, Dominic

    2013-02-21

    The properties of Si thin films for solar cells, the interaction with different substrates and the influence of dopants are examined with synchrotron based x-ray spectroscopy - primarily X-ray emission spectroscopy (XES) and hard X-ray photoelectron spectroscopy (HAXPES). The films are studied as-deposited (i.e., amorphous, a-Si) and after conversion into polycrystalline (poly-Si) employing solid phase crystallization (SPC). Si L{sub 2,3} XES spectra of thin-film Si samples can be described by a superposition of a-Si and monocrystalline Si-wafer (c-Si) reference spectra. According to a quantification based on that superposition principle, none of the investigated samples are completely crystallized - a measurable a-Si component always remains (5-20 %) regardless of deposition and treatment conditions. Based on additional results from electron back scattering diffraction different models are developed which may explain this finding. According to these models, the remnant a-Si component can be attributed to amorphous/disordered material at the grain boundaries. Using one of these models, the thickness of this grain-surrounding material s could be approximated to be (1.5 {+-} 0.5) nm. Further investigations of the SPC process reveal a faster crystallization for boron-doped samples, and a slower crystallization for phosphorous-doped samples, when compared to the crystallization of undoped a Si:H thin films. The peculiarities of B K XES spectra (and observed changes upon SPC) indicate that boron could act as a nucleation center promoting crystallization. Si L{sub 2,3} XES spectra of a-Si:H and P-doped poly-Si exhibit spectral features above the valence band maximum at 100 eV that could be attributed to a-Si defect states and n{sup +}-dopant states, respectively. The SPC crystallization velocity of Si thin films on ZnO:Al/glass is found to be faster than that on SiNx/glass substrate. Multiple indications for oxidization at the poly-Si/ZnO:Al interface are found based on

  14. Process parameter impact on properties of sputtered large-area Mo bilayers for CIGS thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Badgujar, Amol C.; Dhage, Sanjay R., E-mail: dhage@arci.res.in; Joshi, Shrikant V.

    2015-08-31

    Copper indium gallium selenide (CIGS) has emerged as a promising candidate for thin film solar cells, with efficiencies approaching those of silicon-based solar cells. To achieve optimum performance in CIGS solar cells, uniform, conductive, stress-free, well-adherent, reflective, crystalline molybdenum (Mo) thin films with preferred orientation (110) are desirable as a back contact on large area glass substrates. The present study focuses on cylindrical rotating DC magnetron sputtered bilayer Mo thin films on 300 mm × 300 mm soda lime glass (SLG) substrates. Key sputtering variables, namely power and Ar gas flow rates, were optimized to achieve best structural, electrical and optical properties. The Mo films were comprehensively characterized and found to possess high degree of thickness uniformity over large area. Best crystallinity, reflectance and sheet resistance was obtained at high sputtering powers and low argon gas flow rates, while mechanical properties like adhesion and residual stress were found to be best at low sputtering power and high argon gas flow rate, thereby indicating a need to arrive at a suitable trade-off during processing. - Highlights: • Sputtering of bilayer molybdenum thin films on soda lime glass • Large area deposition using rotating cylindrical direct current magnetron • Trade of sputter process parameters power and pressure • High uniformity of thickness and best electrical properties obtained • Suitable mechanical and optical properties of molybdenum are achieved for CIGS application.

  15. Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells

    International Nuclear Information System (INIS)

    Avellaneda, David; Delgado, Guadalupe; Nair, M.T.S.; Nair, P.K.

    2007-01-01

    Chemically deposited SnS thin films possess p-type electrical conductivity. We report a photovoltaic structure: SnO 2 :F-CdS-SnS-(CuS)-silver print, with V oc > 300 mV and J sc up to 5 mA/cm 2 under 850 W/m 2 tungsten halogen illumination. Here, SnO 2 :F is a commercial spray-CVD (Pilkington TEC-8) coating, and the rest deposited from different chemical baths: CdS (80 nm) at 333 K, SnS (450 nm) and CuS (80 nm) at 293-303 K. The structure may be heated in nitrogen at 573 K, before applying the silver print. The photovoltaic behavior of the structure varies with heating: V oc ∼ 400 mV and J sc 2 , when heated at 423 K in air, but V oc decreases and J sc increases when heated at higher temperatures. These photovoltaic structures have been found to be stable over a period extending over one year by now. The overall cost of materials, simplicity of the deposition process, and possibility of easily varying the parameters to improve the cell characteristics inspire further work. Here we report two different baths for the deposition of SnS thin films of about 500 nm by chemical deposition. There is a considerable difference in the nature of growth, crystalline structure and chemical stability of these films under air-heating at 623-823 K or while heating SnS-CuS layers, evidenced in XRF and grazing incidence angle XRD studies. Heating of SnS-CuS films results in the formation of SnS-Cu x SnS y . 'All-chemically deposited photovoltaic structures' involving these materials are presented

  16. Electroluminescence of thin-film CdTe solar cells and modules

    Science.gov (United States)

    Raguse, John Michael

    Thin-film photovoltaics has the potential to be a major source of world electricity. Mitigation of non-uniformities in thin-film solar cells and modules may help improve photovoltaic conversion efficiencies. In this manuscript, a measurement technique is discussed in detail which has the capability of detecting such non-uniformities in a form useful for analysis. Thin-film solar cells emit radiation while operating at forward electrical bias, analogous to an LED, a phenomena known as electroluminescence (EL). This process relatively is inefficient for polycrystalline CdTe devices, on the order of 10-4%, as most of the energy is converted into heat, but still strong enough for many valuable measurements. A EL system was built at the Colorado State University Photovoltaics Laboratory to measure EL from CdTe cells and modules. EL intensity normalized to exposure time and injection current density has been found to correlate very well with the difference between ideal and measured open-circuit voltage from devices that include a GaAs cell, an AlGaAs LED, and several CdTe cells with variations in manufacturing. Furthermore, these data points were found to be in good agreement when overlaid with calibrated data from two additional sources. The magnitude of the inverse slope of the fit is in agreement with the thermal voltage and the intercept was found to have a value near unity, in agreement with theory. The expanded data set consists of devices made from one of seven different band gaps and spans eight decades of EQELED efficiencies. As expected, cells which exhibit major failure of light-dark J-V superposition did not follow trend of well-behaved cells. EL images of selected defects from CdTe cells and modules are discussed and images are shown to be highly sensitive to defects in devices, since the intensity depends exponentially on the cells' voltages. The EL technique has proven to be a useful high-throughput tool for screening of cells. In addition to EL images

  17. In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saez-Araoz, R.; Abou-Ras, D. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co KG Otto-Hahn-Ring 6, 81739 Munich (Germany); Neisser, A.; Wilchelmi, K. [SULFURCELL Solartechnik GmbH Barbara-McClintock-Strasse 11, 12489 Berlin (Germany); Lux-Steiner, M.Ch. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de

    2009-02-02

    This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS{sub 2} (CIS) and Cu(In,Ga)(SSe){sub 2} (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules.

  18. In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

    International Nuclear Information System (INIS)

    Saez-Araoz, R.; Abou-Ras, D.; Niesen, T.P.; Neisser, A.; Wilchelmi, K.; Lux-Steiner, M.Ch.; Ennaoui, A.

    2009-01-01

    This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS 2 (CIS) and Cu(In,Ga)(SSe) 2 (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules

  19. Anti-reflective microstructure array and its performance evaluation in thin film flexible solar cells

    Science.gov (United States)

    Chen, Fei; Zhan, Xinghua; Gao, Mengyu; Tie, Shengnian; Gao, Wei

    2017-07-01

    The anti-reflective (AR) structure greatly reduces the light reflection. When it is applied on solar cells, it enables more light to be absorbed by the cells, increasing the energy of the incident light and improving the light-to-electricity conversion efficiency. In this study, the optical properties of AR microstructures are investigated followed by the performance evaluation of solar cells. The AR microstructure is arrayed in a uniform and periodic fashion. When it is applied on PMMA, only 1.0% of the light is reflected away while 2.6% of the light is reflected on glass. The angular dependence performance is also improved with AR structure with 9.4% more light absorption, which can increase the effective energy generation duration for the solar cell. The AR structure is applied to amorphous silicon thin film solar cells by nano-imprinting technology. The solar cell with AR structure gained 8.63% more power compared to the conventional solar cells.

  20. Two-dimensional high efficiency thin-film silicon solar cells with a lateral light trapping architecture.

    Science.gov (United States)

    Fang, Jia; Liu, Bofei; Zhao, Ying; Zhang, Xiaodan

    2014-08-22

    Introducing light trapping structures into thin-film solar cells has the potential to enhance their solar energy harvesting as well as the performance of the cells; however, current strategies have been focused mainly on harvesting photons without considering the light re-escaping from cells in two-dimensional scales. The lateral out-coupled solar energy loss from the marginal areas of cells has reduced the electrical yield indeed. We therefore herein propose a lateral light trapping structure (LLTS) as a means of improving the light-harvesting capacity and performance of cells, achieving a 13.07% initial efficiency and greatly improved current output of a-Si:H single-junction solar cell based on this architecture. Given the unique transparency characteristics of thin-film solar cells, this proposed architecture has great potential for integration into the windows of buildings, microelectronics and other applications requiring transparent components.

  1. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite

    Science.gov (United States)

    Wang, Tianyue; Chen, Jiewei; Wu, Gaoxiang; Song, Dandan; Li, Meicheng

    2017-01-01

    Heterojunction and sandwich architectures are two new-type structures with great potential for solar cells. Specifically, the heterojunction structure possesses the advantages of efficient charge separation but suffers from band offset and large interface recombination; the sandwich configuration is favorable for transferring carriers but requires complex fabrication process. Here, we have designed two thin-film polycrystalline solar cells with novel structures: sandwich CIGS and heterojunction perovskite, referring to the advantages of the architectures of sandwich perovskite (standard) and heterojunction CIGS (standard) solar cells, respectively. A reliable simulation software wxAMPS is used to investigate their inherent characteristics with variation of the thickness and doping density of absorber layer. The results reveal that sandwich CIGS solar cell is able to exhibit an optimized efficiency of 20.7%, which is much higher than the standard heterojunction CIGS structure (18.48%). The heterojunction perovskite solar cell can be more efficient employing thick and doped perovskite films (16.9%) than these typically utilizing thin and weak-doping/intrinsic perovskite films (9.6%). This concept of structure modulation proves to be useful and can be applicable for other solar cells. Project supported by the National High-Tech R&D Program of China (No. 2015AA034601), the National Natural Science Foundation of China (Nos. 91333122, 61204064, 51202067, 51372082, 51402106, 11504107), the Ph.D. Programs Foundation of Ministry of Education of China (Nos. 20120036120006, 20130036110012), the Par-Eu Scholars Program, and the Fundamental Research Funds for the Central Universities.

  2. Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells

    Science.gov (United States)

    Xin, Peipei

    Cu(In,Ga)Se2-based thin film solar cells are considered to be one of the most promising photovoltaic technologies. Cu(In,Ga)Se2 (CIGS) solar devices have the potential advantage of low-cost, fast fabrication by using semiconductor layers of only a few micrometers thick and high efficiency photovoltaics have been reported at both the cell and the module levels. CdS via chemical bath deposition (CBD) has been the most widely used buffer option to form the critical junction in CIGS-based thin film photovoltaic devices. However, the disadvantages of CdS can’t be ignored - regulations on cadmium usage are getting stricter primarily due to its toxicity and environmental impacts, and the proper handling of the large amount of toxic chemical bath waste is a massive and expensive task. This dissertation is devoted to the development of Cd-free alternative buffer layers in CIGS-based thin film solar cells. Based on the considerations of buffer layer selection criteria and extensive literature review, Zn-compound buffer materials are chosen as the primary investigation candidates. Radio frequency magnetron sputtering is the preferred buffer deposition approach since it’s a clean and more controllable technique compared to CBD, and is readily scaled to large area manufacturing. First, a comprehensive study of the ZnSe1-xOx compound prepared by reactive sputtering was completed. As the oxygen content in the reactive sputtering gas increased, ZnSe1-xOx crystallinity and bandgap decreased. It’s observed that oxygen miscibility in ZnSe was low and a secondary phase formed when the O2 / (O2 + Ar) ratio in the sputtering gas exceeded 2%. Two approaches were proposed to optimize the band alignment between the CIGS and buffer layer. One method focused on the bandgap engineering of the absorber, the other focused on the band structure modification of the buffer. As a result, improved current of the solar cell was achieved although a carrier transport barrier at the junction

  3. Thin-film-transistor array: an exploratory attempt for high throughput cell manipulation using electrowetting principle

    Science.gov (United States)

    Shaik, F. Azam; Cathcart, G.; Ihida, S.; Lereau-Bernier, M.; Leclerc, E.; Sakai, Y.; Toshiyoshi, H.; Tixier-Mita, A.

    2017-05-01

    In lab-on-a-chip (LoC) devices, microfluidic displacement of liquids is a key component. electrowetting on dielectric (EWOD) is a technique to move fluids, with the advantage of not requiring channels, pumps or valves. Fluids are discretized into droplets on microelectrodes and moved by applying an electric field via the electrodes to manipulate the contact angle. Micro-objects, such as biological cells, can be transported inside of these droplets. However, the design of conventional microelectrodes, made by standard micro-fabrication techniques, fixes the path of the droplets, and limits the reconfigurability of paths and thus limits the parallel processing of droplets. In that respect, thin film transistor (TFT) technology presents a great opportunity as it allows infinitely reconfigurable paths, with high parallelizability. We propose here to investigate the possibility of using TFT array devices for high throughput cell manipulation using EWOD. A COMSOL based 2D simulation coupled with a MATLAB algorithm was used to simulate the contact angle modulation, displacement and mixing of droplets. These simulations were confirmed by experimental results. The EWOD technique was applied to a droplet of culture medium containing HepG2 carcinoma cells and demonstrated no negative effects on the viability of the cells. This confirms the possibility of applying EWOD techniques to cellular applications, such as parallel cell analysis.

  4. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...... with nanotexture is shown. Microcrystalline and amorphous silicon single junction cells with stable efficiencies with more than 8 % have been made, paving the way towards a-Si/ c-Si tandem cells with more than 11% efficiency....

  5. Thin film CIGS solar cells with a novel low cost process - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, A. N.; Romanyuk, Y.

    2010-01-15

    Novel manufacturing routes for efficient and low-cost Cu(In,Ga)Se{sub 2} (called CIGS) thin film solar cells are explored and patented. CIGS has proven its suitability for highly efficient and extremely stable solar cells. The low-cost methods allow impurity free material synthesis, fast large-area deposition, high material utilization and a very short energy payback time with drastically lower manufacturing costs. Two non-vacuum, solution-based approaches are investigated to deposit thin layers of CIGS. The first approach considers incorporation of copper into indium gallium selenide precursor layers by ion-exchange from aqueous or organic solutions. Organic solutions provide faster copper incorporation and do not corrode the metal back contact. Solar cells processed from selenized precursor films exhibit efficiencies of up to 4.1%. The second approach with paste coating of inorganic salt solution results in a solar cell efficiency of 4% (record 6.7%), where further improvements are hindered by the presence of the residual carbon layer. Using alternative organic binders, pre-deposited selenium layers, non-binder recipes helps to avoid the carbon layer although the obtained layers are inhomogeneous and contain impurity phases. A patent for the ion-exchange approach is pending, and the obtained research results on the paste coating approach will be scrutinized during new European FP7 project 'NOVA-CIGS'. (authors)

  6. Impacts of Temperature on the Performance of Cdte Based Thin-Film Solar Cell

    Science.gov (United States)

    Asaduzzaman, Md.; Newaz Bahar, Ali; Maksudur Rahman Bhuiyan, Mohammad; Habib, Md. Ahsan

    2017-08-01

    In this investigation, the effect of temperature on the performance of CdTe based thin film solar cells has been studied. The parameters such as open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor and efficiency η determines the performance of solar cell. And an important diode parameter, reverse saturation current density, J 0 controls the impacts of temperature on the performance parameters. The reverse saturation current density of the CdTe photovoltaic cell, J 0 = CT 3exp(-qEg /kT) was determinedas optimum for C = 17.90 mAcm -2 K 3 yields CT 3 = 4.74 × 108 mAcm -2. In this case, 298 K is considered to be more suitable temperature to achieve optimized Voc, Jsc, FF, and η calculated for AM1.5G illumination spectra. The maximum attained values of performance parameters are compared with the experimental and theoretical results in the literature of CdTe solar cells. Moreover, the rate of change in performance parameters due to temperature are also measured and compared with the results available in the earlier published works.

  7. Inductively coupled hydrogen plasma processing of AZO thin films for heterojunction solar cell applications

    International Nuclear Information System (INIS)

    Zhou, H.P.; Xu, S.; Zhao, Z.; Xiang, Y.

    2014-01-01

    Highlights: • A high-density plasma reactor of inductively coupled plasma source is used in this work. • The conductivity and transmittance can be enhanced simultaneously in the hydrogen process. • The formation of additional donors and passivation due to the hydrogen plasma processing. • The photovoltaic improvement due to the improved AZO layer and hetero-interface quality in the solar cells. - Abstract: Al-doped ZnO (AZO) thin films deposited by means of RF magnetron sputtering were processed in a low frequency inductively coupled plasma of H 2 , aiming at heterojunction (HJ) solar cell applications. A variety of characterization results show that the hydrogen plasma processing exerts a significant influence on the microstructures, electrical and optical properties of the AZO films. The incorporation of hydrogen under the optimum treatment simultaneously promoted the transmittance and conductivity due to the hydrogen associated passivation effect on the native defects and the formation of shallow donors in the films, respectively. A p-type c-Si based HJ solar cell with a front AZO contact was also treated in as-generated non-equilibrium hydrogen plasma and the photovoltaic performance of the solar cell was prominently improved. The underlying mechanism was discussed in terms of the beneficial impacts of high-density hydrogen plasma on the properties of AZO itself and the hetero-interfaces involved in the HJ structure (interface defect and energy band configuration)

  8. Surface characterization and assessment of cell attachment capabilities of thin films fabricated by ion-beam irradiation of poly(L-lactic acid) substrates

    International Nuclear Information System (INIS)

    Tanaka, Toshiyuki; Suzuki, Yoshiaki; Tsuchiya, Koji; Yajima, Hirofumi

    2013-01-01

    Highlights: ► Thin films can be obtained by ion-beam irradiation of poly(L-lactic acid). ► Both surfaces of the thin film were carbonized by the irradiation. ► No significant changes were noticed in the topographies of the two surfaces. ► Fibroblasts attached firmly to the bottom as well as the top surface of the film. - Abstract: The ion-beam irradiation of substrates of poly(L-lactic acid) (PLLA), a biodegradable polymer, gave rise to exfoliatable thin films when the substrate was immersed in an aqueous solution. The thin films exhibited excellent cell affinity, and hence, can be useful in bioengineering applications. In this study, we characterized both surfaces of the thin films and evaluated their cell attachment capabilities. Each surface was analyzed by X-ray photoelectron spectroscopy (XPS) and dynamic force microscopy (DFM). These analyses showed that carbonization took place at both surfaces. In addition, no significant changes were noticed in the topographies of the two surfaces. Finally, the cell attachment capabilities of the surfaces were determined by culturing mouse fibroblasts on them. The cells attached firmly to the bottom as well as the top surface of the film and were well spread out. These results could be attributed to the carbonization of the surfaces of the thin-film. Such thin films, fabricated by the irradiation of a biodegradable polymer, are expected to find wide application in areas such as tissue regeneration and cell transplantation.

  9. Functional organic thin films

    OpenAIRE

    Scharnberg, Michael

    2007-01-01

    Organic thin films are used in many technological and engineering applications nowadays. They find use as coatings, sensors, detectors, as matrix materials in nanocomposites, as self-assembled monolayers for surface functionalization, as low-k dielectrics in integrated circuits and in advanced organic electronic applications like organic light emitting diodes, organic field effect transistors and organic photovoltaics (esp. organic solar cells) and many other applications. OLED displays are n...

  10. Effect of Hysteresis on Measurements of Thin-Film Cell Performance

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; del Cueto, J.

    2011-03-01

    Transient or hysteresis effects in polycrystalline thin film CdS/CdTe cells are a function of pre-measurement voltage bias and whether Cu is introduced as an intentional dopant during back contact fabrication. When Cu is added, the current-density (J) vs. voltage (V) measurements performed in a reverse-to-forward voltage direction will yield higher open-circuit voltage (Voc), up to 10 mV, and smaller short-circuit current density (Jsc), by up to 2 mA/cm2, relative to scanning voltage in a forward-to-reverse direction. The variation at the maximum power point, Pmax, is however small. The resulting variation in FF can be as large as 3%. When Cu is not added, hysteresis in both Voc and Jsc is negligible however Pmax hysteresis is considerably greater. This behavior corroborates observed changes in depletion width, Wd, derived from capacitance (C) vs voltage (V) scans. Measured values of Wd are always smaller in reverse-to-forward voltage scans, and conversely, larger in the forward-to-reverse voltage direction. Transient ion drift (TID) measurements performed on Cu-containing cells do not show ionic behavior suggesting that capacitance transients are more likely due to electronic capture-emission processes. J-V curve simulation using Pspice shows that increased transient capacitance during light-soak stress at 100 degrees C correlates with increased space-charge recombination. Voltage-dependent collection however was not observed to increase with stress in these cells.

  11. Characterization of Lateral Structure of thep-i-nDiode for Thin-Film Silicon Solar Cell.

    Science.gov (United States)

    Kiaee, Zohreh; Joo, Seung Ki

    2018-03-01

    The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

  12. Influence of Cu–Ti thin film surface properties on antimicrobial activity and viability of living cells

    Energy Technology Data Exchange (ETDEWEB)

    Wojcieszak, Damian, E-mail: damian.wojcieszak@pwr.edu.pl [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Kaczmarek, Danuta [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Antosiak, Aleksandra [Institute of Immunology and Experimental Therapy, Polish Academy of Sciences, Rudolfa Weigla 12, 53-114 Wrocław (Poland); Mazur, Michal [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Rybak, Zbigniew; Rusak, Agnieszka; Osekowska, Malgorzata [Department for Experimental Surgery and Biomaterials Research, Wroclaw Medical University, Poniatowskiego 2, 50-326 Wroclaw (Poland); Poniedzialek, Agata [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Gamian, Andrzej; Szponar, Bogumila [Institute of Immunology and Experimental Therapy, Polish Academy of Sciences, Rudolfa Weigla 12, 53-114 Wrocław (Poland)

    2015-11-01

    The paper describes properties of thin-film coatings based on copper and titanium. Thin films were prepared by co-sputtering of Cu and Ti targets in argon plasma. Deposited coatings consist of 90 at.% of Cu and 10 at.% of Ti. Characterization of the film was made on the basis of investigations of microstructure and physicochemical properties of the surface. Methods such as scanning electron microscopy, x-ray microanalysis, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, optical profilometry and wettability measurements were used to assess the properties of deposited thin films. An impact of Cu–Ti coating on the growth of selected bacteria and viability of the living cells (line L929, NCTC clone 929) was described in relation to the structure, surface state and wettability of the film. It was found that as-deposited films were amorphous. However, in such surroundings the nanocrystalline grains of 10–15 nm and 25–35 nm size were present. High surface active area with a roughness of 8.9 nm, had an effect on receiving relatively high water contact angle value (74.1°). Such wettability may promote cell adhesion and result in an increase of the probability of copper ion transfer from the film surface into the cell. Thin films revealed bactericidal and fungicidal effects even in short term-contact. High activity of prepared films was directly related to high amount (ca. 51 %) of copper ions at 1+ state as x-ray photoelectron spectroscopy results have shown. - Graphical abstract: Bactericidal and fungicidal effects of time contact with surface of Cu–Ti thin films. - Highlights: • Antimicrobial activity and cytotoxic effect (viability of L929 cell line) of metallic Cu–Ti films • Thin films were prepared by co-sputtering of Cu and Ti. • As-deposited Cu–Ti films were amorphous and homogenous. • Bactericidal and fungicidal effects even in short term-contact were observed.

  13. Effect of p-layer properties on nanocrystalline absorber layer and thin film silicon solar cells

    International Nuclear Information System (INIS)

    Chowdhury, Amartya; Adhikary, Koel; Mukhopadhyay, Sumita; Ray, Swati

    2008-01-01

    The influence of the p-layer on the crystallinity of the absorber layer and nanocrystalline silicon thin film solar cells has been studied. Boron doped Si : H p-layers of different crystallinities have been prepared under different power pressure conditions using the plasma enhanced chemical vapour deposition method. The crystalline volume fraction of p-layers increases with the increase in deposition power. Optical absorption of the p-layer reduces as the crystalline volume fraction increases. Structural studies at the p/i interface have been done by Raman scattering studies. The crystalline volume fraction of the i-layer increases as that of the p-layer increases, the effect being more prominent near the p/i interface. Grain sizes of the absorber layer decrease from 9.2 to 7.2 nm and the density of crystallites increases as the crystalline volume fraction of the p-layer increases and its grain size decreases. With increasing crystalline volume fraction of the p-layer solar cell efficiency increases

  14. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

    Science.gov (United States)

    Mickelsen, R.A.; Chen, W.S.

    1982-06-15

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

  15. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

    Science.gov (United States)

    Mickelsen, R.A.; Chen, W.S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

  16. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    Science.gov (United States)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  17. Simulation approach for studying the performances of original superstrate CIGS thin films solar cells

    International Nuclear Information System (INIS)

    Bouchama, I.; Djessas, K.; Djahli, F.; Bouloufa, A.

    2011-01-01

    In this work, we report on the performances of superstrate Cu(In,Ga)Se 2 (CIGS) thin film solar cells with an alternative SLG/SnO 2 :F/CIGS/In 2 Se 3 /Zn structure using AMPS-1D (Analysis of Microelectronic and Photonic structures) device simulator. An inverted surface layer, n-type CIGS layer, is inserted between the In 2 Se 3 buffer and CIGS absorber layers and the SnO 2 :F layer is just a transparent conducting oxide (TCO). The simulation has been carried out by lighting through SnO 2 :F. The obtained results show that the existence of so-called 'ordered defect compound' (ODC) layer in such a structure is the critical factor responsible for the optimization of the performances. Photovoltaic parameters were determined using the current density-voltage (J-V) curve. An optimal absorber and ODC layer thickness has been estimated, that improve significantly the devices efficiency exceeding 15% AM1.5 G. The variation of carrier density in In 2 Se 3 layer has an influence on the superstrate CIGS cells performances. Moreover, the quantum efficiency (Q.E.) characteristics display a maximum value of about 80% in the visible range.

  18. DC electric and photoelectric measurements of CdTe thin films in Schottky-barrier cells

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, S

    2004-06-15

    Measurements of the temperature dependence of ohmic and space-charge-limited (SCL) currents on thin films of polycrystalline particles of cadmium telluride in Schottky-junction cells have been carried out in air ambient. These cells showed rectification where p-CdTe material was flanked between an ohmic contact (Au) and a blocking contact (Al). At low voltages, the dark current in the forward direction which corresponds to negative potential at the Al electrode varies exponentially with voltage. At higher voltages, two distinct regions of ohmic and SCL conduction limited by a discrete trapping level are determined. Traps with a density of 3.85x10{sup 22} m{sup -3} located at 0.58 eV above the valence band edge have been observed. The thickness dependence in the square-law region has been found to confirm the d{sup -3} law. Values of conversion efficiency as high as 11.3% and open-circuit voltage of 0.77 V have been evaluated from the photo-measurements of J-V characteristic at input power density of 100 mW cm{sup -2}. Space-charge concentrations and barrier heights have been estimated from the capacitance-voltage (C-V) measurements both in dark and under constant illumination. The linearity of the C{sup -2}-V dependence is associated with a homogenous distribution of the impurities inside the space-charge region.

  19. New diarylmethanofullerene derivatives and their properties for organic thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Daisuke Sukeguchi

    2009-02-01

    Full Text Available A number of diarylmethanofullerene derivatives were synthesized. The cyclopropane ring of the derivatives has two aryl groups substituted with electron-withdrawing and -donating groups, the latter with long alkyl chains to improve solubility in organic solvents, an important property in processing cells. First reduction potentials of most derivatives were less negative than that of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM, which is possibly ascribed to their electron-withdrawing nature. Organic thin-film photovoltaic cells fabricated with poly(3-hexylthiophene (P3HT as the electron-donor and diarylmethanofullerene derivatives as the electron-acceptor material were examined. The {(methoxycarbonylphenyl[bis(octyloxyphenyl]methano}fullerene showed power conversion efficiency as high as PCBM, but had higher solubility in a variety of organic solvents than PCBM. The Voc value was higher than that of PCBM, which is derived from the electron-donating (octyloxyphenyl group, possibly raising the LUMO level. Photovoltaic effects of the devices fabricated with the derivatives having some electron-withdrawing groups were also examined.

  20. Three-dimensional minority carrier lifetime mapping of thin film semiconductors for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Hardin, Brian [PLANT PV, Inc., Belmont, CA (United States); Peters, Craig [PLANT PV, Inc., Belmont, CA (United States); Barnard, Edward [PLANT PV, Inc., Belmont, CA (United States)

    2015-09-30

    This project addresses the difficulty of accurately measuring charge carrier dynamics in novel semiconductor materials for thin film photovoltaic cells. We have developed a two- photon lifetime tomography technique to separate bulk minority carrier lifetime from surface recombination effects and effects of recombination at sub-surface defects. This technique also enables us to characterize how local defects such as grain boundaries– buried below the surface of a sample–affect carrier lifetimes in the active layer, dynamics that have been previously inaccessible. We have applied this newly developed technique to illuminate how CdCl2 treatment improves CdTe PV efficiency. From striking 3D lifetime tomography maps, a clear, sub- surface understanding emerges of the photophysical changes that occur in CdTe active medium following exposure to CdCl2, a standard step in the fabrication of high-efficiency CdTe-based solar cells. This work demonstrates a well-defined method to quantify grain-boundary, interface, and bulk recombination in CdTe and other optically-active polycrystalline semiconductor materials; information that can provide critical information to the development of next- generation photovoltaics and many other semiconductor technologies.

  1. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

    International Nuclear Information System (INIS)

    Sang, Liwen; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

    2015-01-01

    In x Ga 1−x N, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In 0.08 Ga 0.92 N is achieved with a high hole concentration of more than 10 18  cm −3 . The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells

  2. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sang, Liwen, E-mail: SANG.Liwen@nims.go.jp [International Center for Material Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076 (Japan); Liao, Meiyong; Koide, Yasuo [Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sumiya, Masatomo [Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076 (Japan)

    2015-03-14

    In{sub x}Ga{sub 1−x}N, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In{sub 0.08}Ga{sub 0.92}N is achieved with a high hole concentration of more than 10{sup 18 }cm{sup −3}. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

  3. Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

    Directory of Open Access Journals (Sweden)

    Chuan Lung Chuang

    2015-01-01

    Full Text Available Indium tin oxide (ITO thin films were grown on glass substrates by direct current (DC reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were -1.6E+20 cm−3, 2.7E+01 cm2/Vs, 1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

  4. Plasmonic thin film InP/graphene-based Schottky-junction solar cell using nanorods

    Directory of Open Access Journals (Sweden)

    Abedin Nematpour

    2018-03-01

    Full Text Available Herein, the design and simulation of graphene/InP thin film solar cells with a novel periodic array of nanorods and plasmonic back-reflectors of the nano-semi sphere was proposed. In this structure, a single-layer of the graphene sheet was placed on the vertical nanorods of InP to form a Schottky junction. The electromagnetic field was determined using solving three-dimensional Maxwell's equations discretized by the finite difference method (FDM. The enhancement of light trapping in the absorbing layer was illustrated, thereby increasing the short circuit current to a maximum value of 31.57 mA/cm2 with nanorods having a radius of 400 nm, height of 1250 nm, and nano-semi sphere radius of 50 nm, under a solar irradiation of AM1.5G. The maximum ultimate efficiency was determined to be 45.8% for an angle of incidence of 60°. This structure has shown a very good light trapping ability when graphene and ITO layers were used at the top and as a back-reflector in the proposed photonic crystal structure of the InP nanorods. Thence, this structure improves the short-circuit current density and the ultimate efficiency of 12% and 2.7%, respectively, in comparison with the InP-nanowire solar cells.

  5. Preparation of thin films, with base to precursor materials of type Cu-In-Se elaborated by electrodeposition for the solar cells elaboration

    International Nuclear Information System (INIS)

    Fernandez, A.M.

    1999-01-01

    Thin films of chalcogenide compounds are promising because they have excellent optoelectronic characteristics to be applied in solar cells. In particular, CuInSe 2 and Cd Te thin films have shown high solar to electrical conversion efficiency. However, this efficiency is limited by the method of preparation, in this case, physical vapor deposition techniques are used. In order to increase the area of deposition t is necessary to use chemical methods, for example, electrodeposition technique. In this paper, the preparation of Cu-In-Se precursors thin films by electrochemical method is reported. These precursors were used to build solar cells with 7.9 % of efficiency. (Author)

  6. Effect of back reflectors on photon absorption in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Hossain, Mohammad I.; Qarony, Wayesh; Hossain, M. Khalid; Debnath, M. K.; Uddin, M. Jalal; Tsang, Yuen Hong

    2017-10-01

    In thin-film solar cells, the photocurrent conversion productivity can be distinctly boosted-up utilizing a proper back reflector. Herein, the impact of different smooth and textured back reflectors was explored and effectuated to study the optical phenomena with interface engineering strategies and characteristics of transparent contacts. A unique type of wet-chemically textured glass-substrate 3D etching mask used in superstrate (p-i-n) amorphous silicon-based solar cell along with legitimated back reflector permits joining the standard light-trapping methodologies, which are utilized to upgrade the energy conversion efficiency (ECE). To investigate the optical and electrical properties of solar cell structure, the optical simulations in three-dimensional measurements (3D) were performed utilizing finite-difference time-domain (FDTD) technique. This design methodology allows to determine the power losses, quantum efficiencies, and short-circuit current densities of various layers in such solar cell. The short-circuit current densities for different reflectors were varied from 11.50 to 13.27 and 13.81 to 16.36 mA/cm2 for the smooth and pyramidal textured solar cells, individually. Contrasted with the comparable flat reference cell, the short-circuit current density of textured solar cell was increased by around 24%, and most extreme outer quantum efficiencies rose from 79 to 86.5%. The photon absorption was fundamentally improved in the spectral region from 600 to 800 nm with no decrease of photocurrent shorter than 600-nm wavelength. Therefore, these optimized designs will help to build the effective plans next-generation amorphous silicon-based solar cells.

  7. Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells

    International Nuclear Information System (INIS)

    Jin, Bin Bin; Wang, Ye Feng; Wang, Xue Qing; Zeng, Jing Hui

    2016-01-01

    Highlights: • PbSe thin film is deposited on FTO glass by a pulse voltage electrodeposition method. • The thin film is used as counter electrode (CE) in quantum dot-sensitized solar cell. • Superior electrocatalytic activity and stability in the polysulfide electrolyte is received. • The narrow band gap characteristics and p-type conductivity enhances the cell efficiency. • An efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells. - Abstract: Lead selenide (PbSe) thin films were deposited on fluorine doped tin oxide (FTO) glass by a facile one-step pulse voltage electrodeposition method, and used as counter electrode (CE) in CdS/CdSe quantum dot-sensitized solar cells (QDSSCs). A power conversion efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells, which is much better than that of 2.39% received using Pt CEs. The enhanced performance is attributed to the extended absorption in the near infrared region, superior electrocatalytic activity and p-type conductivity with a reflection of the incident light at the back electrode in addition. The physical and chemical properties were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), reflectance spectra, electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The present work provides a facile pathway to an efficient CE in the QDSSCs.

  8. Multilayer Ni/Fe thin films as oxygen evolution catalysts for solar fuel production

    International Nuclear Information System (INIS)

    Biset-Peiró, M; Murcia-López, S; Fàbrega, C; Morante, J R; Andreu, T

    2017-01-01

    The slow kinetics and high overpotential of the oxygen evolution reaction is one of the main limiting factors to achieve the minimum required performances of the so-called photoelectrochemical water splitting systems. An oxygen evolution catalyst (OEC) becomes essential in order to perform this process with higher efficiency. Herein, we report the physical, optical and electrochemical characterization of multilayer Ni/Fe thin films as earth-abundant OEC, to avoid the use of platinum group metals (PGM). Uniform films of thicknesses ranging from 1 to 10 nm were fabricated by sequential and alternate thermal evaporation of Ni and Fe. It was found that the successive deposition allows the fabrication of a Ni terminated surface that does not need activation due to the Fe underlayer. The lowest overpotential achieved for NiFe was 370 mV at 10 mA cm −2 and a Tafel slope of 37 mV dec −1 with 1 nm thickness and 95% transmittance. Finally, NiFe OEC was implemented on top of Mo:BiVO 4 photoanodes which resulted in a reduction of the open circuit potential of 0.2 V and up to five fold increase of the oxidation efficiency at 0.7 V RHE . The results presented facilitate the practical implementation of BiVO 4 photoanodes in tandem configuration for bias free photoassisted water splitting. (paper)

  9. Self-Organized Nanoscale Roughness Engineering for Broadband Light Trapping in Thin FilmSolar Cells

    Directory of Open Access Journals (Sweden)

    Carlo Mennucci

    2017-04-01

    Full Text Available We present a self-organized method based on defocused ion beam sputtering for nanostructuring glass substrates which feature antireflective and light trapping effects. By irradiating the substrate, capped with a thin gold (Au film, a self-organized Au nanowire stencil mask is firstly created. The morphology of the mask is then transferred to the glass surface by further irradiating the substrate, finally producing high aspect ratio, uniaxial ripple-like nanostructures whose morphological parameters can be tailored by varying the ion fluence. The effect of a Ti adhesion layer, interposed between glass and Au with the role of inhibiting nanowire dewetting, has also been investigated in order to achieve an improved morphological tunability of the templates. Morphological and optical characterization have been carried out, revealing remarkable light trapping performance for the largest ion fluences. The photon harvesting capability of the nanostructured glass has been tested for different preparation conditions by fabricating thin film amorphous Si solar cells. The comparison of devices grown on textured and flat substrates reveals a relative increase of the short circuit current up to 25%. However, a detrimental impact on the electrical performance is observed with the rougher morphologies endowed with steep v-shaped grooves. We finally demonstrate that post-growth ion beam restructuring of the glass template represents a viable approach toward improved electrical performance.

  10. Broadband light trapping in thin film solar cells with self-organized plasmonic nano-colloids

    International Nuclear Information System (INIS)

    Mendes, Manuel J.; Mateus, Tiago; Lyubchyk, Andriy; Águas, Hugo; Ferreira, Isabel; Fortunato, Elvira; Martins, Rodrigo; Morawiec, Seweryn; Priolo, Francesco; Crupi, Isodiana

    2015-01-01

    The intense light scattered from metal nanoparticles sustaining surface plasmons makes them attractive for light trapping in photovoltaic applications. However, a strong resonant response from nanoparticle ensembles can only be obtained if the particles have monodisperse physical properties. Presently, the chemical synthesis of colloidal nanoparticles is the method that produces the highest monodispersion in geometry and material quality, with the added benefits of being low-temperature, low-cost, easily scalable and of allowing control of the surface coverage of the deposited particles. In this paper, novel plasmonic back-reflector structures were developed using spherical gold colloids with appropriate dimensions for pronounced far-field scattering. The plasmonic back reflectors are incorporated in the rear contact of thin film n-i-p nanocrystalline silicon solar cells to boost their photocurrent generation via optical path length enhancement inside the silicon layer. The quantum efficiency spectra of the devices revealed a remarkable broadband enhancement, resulting from both light scattering from the metal nanoparticles and improved light incoupling caused by the hemispherical corrugations at the cells’ front surface formed from the deposition of material over the spherically shaped colloids. (paper)

  11. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  12. High-temperature fabrication of Ag(In,Ga)Se{sub 2} thin films for applications in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xianfeng [International Center for Science and Engineering Programs, Waseda University, Tokyo (Japan); Yamada, Akira [Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo (Japan); Kagami Memorial Research Institute for Materials Science, Waseda University, Tokyo (Japan)

    2017-10-15

    Molecular beam epitaxy was used to fabricate Ag(In,Ga)Se{sub 2} (AIGS) thin films. To improve the diffusion of Ag, high-temperature deposition and high-temperature annealing methods were applied to fabricate AIGS films. The as-grown AIGS thin films were then used to make AIGS solar cells. We found that grain size and crystallinity of AIGS films were considerably improved by increasing the deposition and annealing temperature. For high-temperature deposition, temperatures over 600 C led to decomposition of the AIGS film, desorption of In, and deterioration of its crystallinity. The most appropriate deposition temperature was 590 C and a solar cell with a power conversion efficiency of 4.1% was obtained. High-temperature annealing of the AIGS thin films showed improved crystallinity as annealing temperature was increased and film decomposition and In desorption were prevented. A solar cell based on this film showed the highest conversion efficiency of 6.4% when annealed at 600 C. When the annealing temperature was further increased to 610 C, the performance of the cell deteriorated due to loss of the out-of-plane Ga gradient. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

    Directory of Open Access Journals (Sweden)

    Chao-Chun Wang

    2012-01-01

    Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

  14. Optimal indium-gallium-nitride Schottky-barrier thin-film solar cells

    Science.gov (United States)

    Anderson, Tom H.; Lakhtakia, Akhlesh; Monk, Peter B.

    2017-08-01

    A two-dimensional model was developed to simulate the optoelectronic characteristics of indium-gallium-nitride (InξGa1-ξN), thin-film, Schottky-barrier-junction solar cells. The solar cell comprises a window designed to reduce the reflection of incident light, Schottky-barrier and ohmic front electrodes, an n-doped InξGa1-ξN wafer, and a metallic periodically corrugated back-reflector (PCBR). The ratio of indium to gallium in the wafer varies periodically in the thickness direction, and thus the optical and electrical constitutive properties of the alloy also vary periodically. This material nonhomogeneity could be physically achieved by varying the fractional composition of indium and gallium during deposition. Empirical models for indium nitride and gallium nitride, combined with Vegard's law, were used to calculate the optical and electrical constitutive properties of the alloy. The periodic nonhomogeneity aids charge separation and, in conjunction with the PCBR, enables incident light to couple to multiple surface plasmon-polariton waves and waveguide modes. The profile of the resulting chargecarrier-generation rate when the solar cell is illuminated by the AM1.5G spectrum was calculated using the rigorous coupled-wave approach. The steady-state drift-diffusion equations were solved using COMSOL, which employs finite-element methods, to calculate the current density as a function of the voltage. Mid-band Shockley- Read-Hall, Auger, and radiative recombination rates were taken to be the dominant methods of recombination. The model was used to study the effects of the solar-cell geometry and the shape of the periodic material nonhomogeneity on efficiency. The solar-cell efficiency was optimized using the differential evolution algorithm.

  15. Diamond-like nanocomposite: a novel promising carbon based thin film as antireflection and passivation coating for silicon solar cell

    Science.gov (United States)

    Jana, Sukhendu; Das, Sayan; De, Debasish; Mondal, Anup; Gangopadhyay, Utpal

    2018-02-01

    Presently, silicon nitride (SiN x ) is widely used as antireflection coating (ARC) on p-type silicon solar cell. But, two highly toxic gasses ammonia and silane are used. In the present study, the ARC and passivation properties of diamond-like nanocomposite (DLN) thin film on silicon solar cell have been investigated. The DLN thin film has been deposited by rf-PACVD process using liquid precursor HMDSO in argon plasma. The film has been characterized by FESEM, HRTEM, FTIR, and Raman spectroscopy. The optical properties have been estimated by UV–vis–NIR spectroscopy. The minimum reflection has been achieved to 0.75% at 630 nm. Both the short circuit current density and open circuit voltage has been increased significantly from 28.6 mA cm‑2 to 35.5 mA cm‑2 and 0.551 V to 0.613 V respectively. The field effect passivation has been confirmed by dark IV characterization of c-Si /DLN heterojunction structure. All these lead to enhancement of efficiency by almost 4% absolute, which is comparable to SiN x . The ammonia and silane free deposited DLN thin film has a great potential to use as ARC for silicon based solar cell.

  16. AgSb(SxSe1−x)2 thin films for solar cell applications

    International Nuclear Information System (INIS)

    González, J.O.; Shaji, S.; Avellaneda, D.; Castillo, A.G.; Roy, T.K. Das

    2013-01-01

    Highlights: ► AgSb(S x Se 1−x ) 2 thin films were formed by heating Na 2 SeSO 3 dipped Sb 2 S 3 /Ag layers. ► S/Se ratio was varied by changing the dipping time in Na 2 SeSO 3 solution. ► Characterized the films using XRD, XPS, SEM, Optical and electrical measurements. ► Band gap engineering of 1−1.1 eV for x = 0.51 and 0.52 respectively. ► PV Glass/FTO/CdS/AgSb(S x Se 1−x ) 2 /C were prepared showing V oc = 410 mV, J sc = 5.7 mA/cm 2 . - Abstract: Silver antimony sulfoselenide (AgSb(S x Se 1−x ) 2 ) thin films were prepared by heating glass/Sb 2 S 3 /Ag layers after selenization using sodium selenosulphate solution. First, Sb 2 S 3 thin films were deposited on glass substrates from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 . Then Ag thin films were thermally evaporated onto glass/Sb 2 S 3 , followed by selenization by dipping in an acidic solution of Na 2 SeSO 3 . The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(S x Se 1−x ) 2 . Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(S x Se 1−x ) 2 . Photovoltaic structures (PV) were prepared using AgSb(S x Se 1−x ) 2 thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed V oc from 230 to 490 mV and J sc 0.28 to 5.70 mA/cm 2 , under illumination of AM1.5 radiation using a solar simulator

  17. Numerical Optimization of a Bifacial Bi-Glass Thin-Film a-Si:H Solar Cell for Higher Conversion Efficiency

    Science.gov (United States)

    Berrian, Djaber; Fathi, Mohamed; Kechouane, Mohamed

    2018-02-01

    Bifacial solar cells that maximize the energy output per a square meter have become a new fashion in the field of photovoltaic cells. However, the application of thin-film material on bifacial solar cells, viz., thin-film amorphous hydrogenated silicon ( a- Si:H), is extremely rare. Therefore, this paper presents the optimization and influence of the band gap, thickness and doping on the performance of a glass/glass thin-film a- Si:H ( n- i- p) bifacial solar cell, using a computer-aided simulation tool, Automat for simulation of hetero-structures (AFORS-HET). It is worth mentioning that the thickness and the band gap of the i-layer are the key parameters in achieving higher efficiency and hence it has to be handled carefully during the fabrication process. Furthermore, an efficient thin-film a- Si:H bifacial solar cell requires thinner and heavily doped n and p emitter layers. On the other hand, the band gap of the p-layer showed a dramatic reduction of the efficiency at 2.3 eV. Moreover, a high bifaciality factor of more than 92% is attained, and top efficiency of 10.9% is revealed under p side illumination. These optimizations demonstrate significant enhancements of the recent experimental work on thin-film a- Si:H bifacial solar cells and would also be useful for future experimental investigations on an efficient a- Si:H thin-film bifacial solar cell.

  18. Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se{sub 2} semiconductors for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Baier, Robert

    2012-06-25

    Solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 10{sup 11} cm{sup -2} and ∼2.1 x 10{sup 12} cm{sup -2} were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the

  19. Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se2 semiconductors for thin film solar cells

    International Nuclear Information System (INIS)

    Baier, Robert

    2012-01-01

    Solar cells based on polycrystalline Cu(In,Ga)Se 2 (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 10 11 cm -2 and ∼2.1 x 10 12 cm -2 were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the first time on CIGSe thin

  20. Room temperature deposition of zinc oxide thin films by rf-magnetron sputtering for application in solar cells

    Science.gov (United States)

    Sanal, K. C.; Trujillo, R. R.; Nair, P. K.; Nair, M. T. S.

    2016-09-01

    Recent reports indicate that thin films of oxides of zinc: ZnO, Zn(O,S), or Zn-Mg-O, could be a better buffer component than CdS to provide an adequate band alignment with orthorhombic tin sulphide in thin lm solar cells. Thin films of ZnO were grown by rf-magnetron sputtering on different substrates at room temperature. Thin films of ZnO obtained by different deposition methods show hexagonal crystal structure, usually with a preferential orientation of (002) crystallographic planes parallel to the substrate surface. However, in the present study XRD patterns indicate that thicker ZnO films on glass substrates have preferential growth of (103) planes, while that on chemically deposited CdS or ZnS films preferential orientation of (002) planes persists. Bandgap of ZnO films increases from 3.2 eV to 3.4 eV when the chamber pressure used for deposition varies from 2.3 mTorr to 6 mTorr. ZnO films were incorporated in a solar cell structure stainless steel/SnS(cubic)/SnS(orthorhombic)/SnS(cubic)/CdS/ZnO/ZnO:Al. It showed open-circuit voltage of 0.318 V, short-circuit current density of 3.6 mA/cm2 and conversion efficiency of 0.82%.

  1. Influence of thin film thickness of working electrodes on photovoltaic characteristics of dye-sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Lai Yeong-Lin

    2017-01-01

    Full Text Available This paper presents the study of the influence of thin film thickness of working electrodes on the photovoltaic characteristics of dye-sensitized solar cells. Titanium dioxide (TiO2 thin films, with the thickness from 7.67 to 24.3 μm, were used to fabricate the working electrodes of dye-sensitized solar cells (DSSCs. A TiO2 film was coated on a fluorine-doped tin oxide (FTO conductive glass substrate and then sintered in a high-temperature furnace. On the other hand, platinum (Pt solution was coated onto an FTO substrate for the fabrication of the counter electrode of a DSSC. The working electrode immersed in a dye, the counter electrode, and the electrolyte were assembled to complete a sandwich-structure DSSC. The material analysis of the TiO2 films of DSSCs was carried out by scanning electron microscopy (SEM and ultraviolet-visible (UV-Vis spectroscopy, while the photovoltaic characteristics of DSSCs were measured by an AM-1.5 sunlight simulator. The light transmittance characteristics of the TiO2 working electrode depend on the TiO2 film thickness. The thin film thickness of the working electrode also affects the light absorption of a dye and results in the photovoltaic characteristics of the DSSC, including open-circuited voltage (VOC, short-circuited current density (JSC, fill factor, and photovoltaic conversion efficiency.

  2. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    Directory of Open Access Journals (Sweden)

    I. M. Dharmadasa

    2014-06-01

    Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

  3. Quantifying oxygen in paper-based cell cultures with luminescent thin film sensors.

    Science.gov (United States)

    Boyce, Matthew W; Kenney, Rachael M; Truong, Andrew S; Lockett, Matthew R

    2016-04-01

    Paper-based scaffolds are an attractive material for generating 3D tissue-like cultures because paper is readily available and does not require specialized equipment to pattern, cut, or use. By controlling the exchange of fresh culture medium with the paper-based scaffolds, we can engineer diffusion-dominated environments similar to those found in spheroids or solid tumors. Oxygen tension directly regulates cellular phenotype and invasiveness through hypoxia-inducible transcription factors and also has chemotactic properties. To date, gradients of oxygen generated in the paper-based cultures have relied on cellular response-based readouts. In this work, we prepared a luminescent thin film capable of quantifying oxygen tensions in apposed cell-containing paper-based scaffolds. The oxygen sensors, which are polystyrene films containing a Pd(II) tetrakis(pentafluorophenyl)porphyrin dye, are photostable, stable in culture conditions, and not cytotoxic. They have a linear response for oxygen tensions ranging from 0 to 160 mmHg O2, and a Stern-Volmer constant (K sv) of 0.239 ± 0.003 mmHg O2 (-1). We used these oxygen-sensing films to measure the spatial and temporal changes in oxygen tension for paper-based cultures containing a breast cancer line that was engineered to constitutively express a fluorescent protein. By acquiring images of the oxygen-sensing film and the fluorescently labeled cells, we were able to approximate the oxygen consumption rates of the cells in our cultures.

  4. Development of Cell Culture Microdevice Actuated by Piezoelectric Thin Films for Delivering Mechanical Vibratory Stimuli to Cells

    International Nuclear Information System (INIS)

    Yamada, Y; Umegaki, G; Kawashima, T; Nagai, M; Shibata, T; Masuzawa, T; Kimura, T; Kishida, A

    2012-01-01

    In order to realize a cell culture microdevice actuated by piezoelectric thin films for on-chip regulation of cell functions, this paper reported on a feasibility study by using the microdevice with KOH-etched cavities surrounded by four (111) sidewalls as microchambers in order to introduce cells to be cultured. As a result, the vibration characteristic of the PZT actuator was improved by using an electric field -150 kV/cm at 70 C for 30 min in poling process. A feasibility study on cell culture for delivering mechanical vibratory stimuli to cells revealed the microdevice could be applicable to the culture with actual biological cells. In addition, it was found that O 2 -plasma treated parylene-C process could be applicable for obtaining homogeneous surface of cell culture microdevice.

  5. Rigid Biopolymer Nanocrystal Systems for Controlling Multicomponent Nanoparticle Assembly and Orientation in Thin Film Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Jennifer [Univ. of Colorado, Boulder, CO (United States)

    2016-10-31

    We have discovered techniques to synthesize well-defined DN conjugated nanostructures that are stable in a wide variety of conditions needed for DNA mediated assembly. Starting from this, we have shown that DNA can be used to control the assembly and integration of semiconductor nanocrystals into thin film devices that show photovoltaic effects.

  6. On the Scalar Scattering Theory for Thin-Film Solar Cells

    NARCIS (Netherlands)

    Jäger, K.

    2012-01-01

    Nano-textured interfaces between two media of different refractive indices scatter light. The angular distribution and the intensity of the scattered light are deter- mined by the geometry of the nano-textures and the difference of the refractive indices of the two media. Thin-film silicon solar

  7. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  8. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    International Nuclear Information System (INIS)

    Ambrosio, R.; Moreno, M.; Torres, A.; Carrillo, A.; Vivaldo, I.; Cosme, I.; Heredia, A.

    2015-01-01

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ dark changed by 5 order of magnitude under illumination, V d was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH 4 , H 2 , Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ RT ), activation energy (E a ), and optical band gap (E g ). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications

  9. Effect of annealing on the properties of spray-pyrolysed lead sulphide thin films for solar cell application

    Science.gov (United States)

    Veena, E.; Bangera, Kasturi V.; Shivakumar, G. K.

    2017-05-01

    Annealing is the most important processing parameter perhaps as it directly affects the properties of the thin films. In the present article, lead sulphide thin films composed of (2 0 0) plane-oriented nano-rods were successfully synthesized on glass substrates using spray pyrolysis technique at annealing temperature 350 °C. Films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive analysis by X-ray (EDAX), UV-VIS-NIR spectrometry and two-probe experiments. The X-ray diffraction study confirmed that films exhibiting face-centred cubic structure with a preferred orientation along (2 0 0) plane were independent of annealing temperature. SEM photographs revealed the formation of nano-rods. The possible formation of nano-rods and its dependency on optical and electrical properties were discussed. Chemical composition in terms of atomic ratio of the constituents is determined from EDAX studies. The optical band gap of the lead sulphide thin films was found to decrease from 1.22 to 0.98 eV with an increase in annealing temperature. The electrical conductivity of the films at room temperature was of the order of 10-2 Ω-1 cm-1 with the low activation energy. Results prove that lead sulphide films grown by chemical method appeal its adoptability for potential solar cell applications.

  10. Preparation and characterization of CuInSe2 particles via the hydrothermal route for thin-film solar cells

    International Nuclear Information System (INIS)

    Wu, Chung-Hsien; Chen, Fu-Shan; Lin, Shin-Hom; Lu, Chung-Hsin

    2011-01-01

    Highlights: → A new hydrothermal process for preparing copper indium diselenide (CuInSe 2 ). → Well-crystallized CuInSe 2 particles are obtained at 180 deg. C for 1 h. → Densified CuInSe 2 thin films are prepared from ink printing. → Increasing temperatures result in an improvement of properties of CuInSe 2 films. - Abstract: CuInSe 2 powders with a chalcopyrite structure used in thin-film solar cells were successfully prepared via a hydrothermal method at low temperatures within short durations. Well-crystallized CuInSe 2 particles were formed via the hydrothermal reaction at 180 deg. C for 1 h. The concentrations of stabilizer, triethanolamine (TEA), significantly affected the purity, morphology and particle sizes of the prepared powders. Increasing the reaction duration and temperatures led to decrease the amount of second phase In(OH) 3 and resulted in the formation of pure CuInSe 2 . Densified CuInSe 2 thin films were prepared from ink printing with the addition of the flux. Increasing the selenization temperatures increased the grain size and improved the crystallinity of CuInSe 2 films.

  11. Electrochemically synthesized CuInSe2 thin films from non-aqueous electrolyte for solar cell applications

    Science.gov (United States)

    Londhe, Priyanka U.; Rohom, Ashwini B.; Lakhe, Manorama G.; Bhand, Ganesh R.; Chaure, Nandu B.

    2016-12-01

    Highly polycrystalline CuInSe2 (CIS) thin films have been electrodeposited from non-aqueous ethylene glycol (EG) solvent on fluorine-doped tin-oxide-coated glass substrates at 130 °C. The co-deposition potential for Cu, In and Se was optimized by using cyclic voltammetry. CIS layers have been electrodeposited from -1.1 V to -1.5 V versus the Ag/AgCl reference electrode. The effect of selenization on structural, morphological, optical and compositional properties has been studied extensively. Highly crystalline CIS thin films are electrodeposited for all reported growth potentials without post-annealing treatment. The Raman spectra of stoichiometric CIS thin films showed a dominant A1 mode with features receptive to the crystalline quality of the layers. Noticeable changes in the surface morphology and composition of films deposited at different deposition potential were observed. All CIS layers were void free, compact, uniform, and well adherent to the substrates with particle size ˜1-3 μm. Both as-deposited and selenized samples were Cu-rich, however, the composition of selenium remained closer to the ideal value, 50%. A typical solar cell prepared at -1.3 V measured V OC = 0.316 V, J SC = 26 mA, FF = 49, and η = 4.2, under illuminated conditions at 100 mW cm-2.

  12. Surface Modification of Aerosol-Assisted CVD Produced TiO2 Thin Film for Dye Sensitised Solar Cell

    Directory of Open Access Journals (Sweden)

    SuPei Lim

    2014-01-01

    Full Text Available We report a simple and convenient method for the preparation of Ag/TiO2 thin films supported on indium tin oxide, which was achieved by sonochemical deposition of Ag+ on aerosol-assisted chemical vapour deposited TiO2 thin films. Posttreatment was performed on the film by immersion in HCl. The as-prepared composite film was characterised by X-ray diffraction, ultraviolet-visible absorption spectroscopy, Raman spectroscopy, and field emission scanning electron microscopy. The photoelectrochemical measurements and J-V characterisation showed approximately fivefold increase in photocurrent density generation and approximately sevenfold enhancement in dye sensitiser solar cell (DSSC conversion efficiency, which was achieved after modification of the TiO2 film with HCl posttreatment and Ag particle deposition. The improved photocurrent density of 933.30 μA/cm2, as well as DSSC power conversion efficiency of 3.63% with high stability, is an indication that the as-synthesised thin film is a potential candidate for solar energy conversion applications.

  13. Synthesis of non-hydrazine solution processed Cu2(ZnSn)S4 thin films for solar cells applications

    Science.gov (United States)

    Gupta, Indu; Gupta, Preeti; Mohanty, Bhaskar Chandra

    2017-05-01

    Solution processing provides a versatile and inexpensive means to prepare Cu2ZnSnS4 (CZTS) thin films for photovoltaic applications. Differently with the reported growth of CZTS films from hydrazine based toxic solutions, we demonstrate a simple non-toxic ethanol based solution approach to synthesize the films. Using the chemical bath deposition (CBD) method, the CZTS thin films were grown from metal salts (copper chloride, zinc chloride, and tin chloride) in ethanol and monoethanol amine (MEA) and thioacetamide in ethanol as sulfur source in a single dip followed by sulfurization. The structure, composition, morphology and optical properties of the CZTS film were studied by X-ray diffraction, scanning electron microscopy and UV-vis spectroscopy. The results revealed that a post-deposition sulfurization is necessary to the phase formation and among all, sulfurization at 450°C for 60 min yielded phase pure CZTS films having kesterite structure, relatively compact morphology and an optical band gap of ˜1.52 eV indicating its suitability for solar cell applications. The results clearly validate the CBD method as a potential scalable route of preparation of CZTS thin films.

  14. Characterization of Sulfur Bonding in CdS:O Buffer Layers for CdTe-based Thin-Film Solar Cells.

    Science.gov (United States)

    Duncan, Douglas A; Kephart, Jason M; Horsley, Kimberly; Blum, Monika; Mezher, Michelle; Weinhardt, Lothar; Häming, Marc; Wilks, Regan G; Hofmann, Timo; Yang, Wanli; Bär, Marcus; Sampath, Walajabad S; Heske, Clemens

    2015-08-05

    On the basis of a combination of X-ray photoelectron spectroscopy and synchrotron-based X-ray emission spectroscopy, we present a detailed characterization of the chemical structure of CdS:O thin films that can be employed as a substitute for CdS layers in thin-film solar cells. It is possible to analyze the local chemical environment of the probed elements, in particular sulfur, hence allowing insights into the species-specific composition of the films and their surfaces. A detailed quantification of the observed sulfur environments (i.e., sulfide, sulfate, and an intermediate oxide) as a function of oxygen content is presented, allowing a deliberate optimization of CdS:O thin films for their use as alternative buffer layers in thin-film photovoltaic devices.

  15. Light scattering and trapping in thin film silicon solar cells with an n-i-p configuration

    OpenAIRE

    Böttler, Wanjiao

    2015-01-01

    Microcrystalline silicon μc-Si:H thin film solar cells with an n-i-p configuration were set up based on the optimized processes for solar cells with a p-i-n configuration. The deposition processes of window, absorber and front contact layers were optimized. The effects of the thickness and doping ratio of p-type layers, the thickness of the front contact layers and the silane concentration of the absorber layers on the solar cell performance were investigated. For all the optimization and inv...

  16. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    Science.gov (United States)

    Wu, Xuanzhi; Sheldon, Peter

    2000-01-01

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  17. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  18. Photonic Structures for Light Trapping in Thin Film Silicon Solar Cells: Design and Experiment

    Directory of Open Access Journals (Sweden)

    Yi Ding

    2017-12-01

    Full Text Available One of the foremost challenges in designing thin-film silicon solar cells (TFSC is devising efficient light-trapping schemes due to the short optical path length imposed by the thin absorber thickness. The strategy relies on a combination of a high-performance back reflector and an optimized texture surface, which are commonly used to reflect and scatter light effectively within the absorption layer, respectively. In this paper, highly promising light-trapping structures based on a photonic crystal (PC for TFSCs were investigated via simulation and experiment. Firstly, a highly-reflective one-dimensional photonic crystal (1D-PC was designed and fabricated. Then, two types of 1D-PC-based back reflectors (BRs were proposed: Flat 1D-PC with random-textured aluminum-doped zinc oxide (AZO or random-textured 1D-PC with AZO. These two newly-designed BRs demonstrated not only high reflectivity and sufficient conductivity, but also a strong light scattering property, which made them efficient candidates as the electrical contact and back reflector since the intrinsic losses due to the surface plasmon modes of the rough metal BRs can be avoided. Secondly, conical two-dimensional photonic crystal (2D-PC-based BRs were investigated and optimized for amorphous a-SiGe:H solar cells. The maximal absorption value can be obtained with an aspect ratio of 1/2 and a period of 0.75 µm. To improve the full-spectral optical properties of solar cells, a periodically-modulated PC back reflector was proposed and experimentally demonstrated in the a-SiGe:H solar cell. This periodically-modulated PC back reflector, also called the quasi-crystal structure (QCS, consists of a large periodic conical PC and a randomly-textured Ag layer with a feature size of 500–1000 nm. The large periodic conical PC enables conformal growth of the layer, while the small feature size of Ag can further enhance the light scattering. In summary, a comprehensive study of the design, simulation

  19. Characterization of thin film tandem solar cells by radiofrequency pulsed glow discharge - Time of flight mass spectrometry.

    Science.gov (United States)

    Fernandez, Beatriz; Lobo, Lara; Reininghaus, Nies; Pereiro, Rosario; Sanz-Medel, Alfredo

    2017-04-01

    Beside low production costs and the use of nontoxic and abundant raw materials, silicon based thin-film solar cells have the advantage to be built up as multi junction devices like tandem or triple junction solar cells. Silicon thin film modules made of tandem cells with hydrogenated amorphous silicon (a-Si:H) top cell and microcrystalline (μc) Si:H bottom cell are available on the market. In this work, the analytical potential of state-of-the art radiofrequency (rf) pulsed glow discharge (PGD) time of flight mass spectrometry (TOFMS) commercial instrumentation is investigated for depth profiling analysis of tandem-junctions solar cells on 2mm thick glass substrate with 1µm thick ZnO:Al. Depth profile characterization of two thin film tandem photovoltaic devices was compared using millisecond and sub-millisecond rf-PGD regimes, as well as the so-called "low mass mode" available in the commercial instrument used. Two procedures for sample preparation, namely using flat or rough cell substrates, were compared and the distribution of dopant elements (phosphorous, boron and germanium) was investigated in both cases. Experimental results obtained by rf-PGD-TOFMS as well as electrical measurements of the samples showed that a worse depth resolution of dopant elements in the silicon layers (e.g. distribution of boron in a thicker region that suggests a diffusion of this dopant in the coating of the sample) found using a rough sample substrate was related to a higher power conversion efficiency. Copyright © 2016 Elsevier B.V. All rights reserved.

  20. Dense zig-zag microstructures in YSZ thin films by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Dieter Stender

    2015-01-01

    Full Text Available The very brittle oxygen ion conductor yttria stabilized zirconia (YSZ is a typical solid electrolyte for miniaturized thin film fuel cells. In order to decrease the fuel cell operating temperature, the thickness of yttria stabilized zirconia thin films is reduced. Often, these thin membranes suffer from mechanical failure and gas permeability. To improve these mechanical issues, a glancing angle deposition approach is used to grow yttria stabilized zirconia thin films with tilted columnar structures. Changes of the material flux direction during the deposition result in a dense, zigzag-like structure with columnar crystallites. This structure reduces the elastic modulus of these membranes as compared to columnar yttria stabilized zirconia thin films as monitored by nano-indentation which makes them more adaptable to applied stress.

  1. Nanostructured p-type CZTS thin films prepared by a facile solution process for 3D p-n junction solar cells

    Science.gov (United States)

    Park, Si-Nae; Sung, Shi-Joon; Sim, Jun-Hyoung; Yang, Kee-Jeong; Hwang, Dae-Kue; Kim, Junho; Kim, Gee Yeong; Jo, William; Kim, Dae-Hwan; Kang, Jin-Kyu

    2015-06-01

    Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the nanoporous CZTS thin films by chemical bath deposition. The photovoltaic properties of 3D p-n junction CZTS solar cells are predominantly affected by the scale of CZTS nanograins, which is easily controlled by the sulfurization temperature of CZTS precursor films. The scale of CZTS nanograins determines the minority carrier transportation within the 3D p-n junction between CZTS and CdS, which are closely related with the photocurrent of series resistance of 3D p-n junction solar cells. 3D p-n junction CZTS solar cells with nanograins below 100 nm show power conversion efficiency of 5.02%, which is comparable with conventional CZTS thin film solar cells.Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the

  2. Electrochemical Deposition of CuxSnySzO Thin Films and Their Application for Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Yuki Nakashima

    2012-01-01

    Full Text Available CuxSnySzO (CTSO thin films were deposited from an aqueous solution containing CuSO4, SnSO4, and Na2S2O3 by electrochemical techniques. The deposited films were characterized by Auger electron spectroscopy, X-ray diffraction, and optical transmission spectroscopy. The photoelectrochemical measurement showed that the films have p-type conduction and photosensitivity. ZnO/CTSO heterojunction solar cells were fabricated. Rectification properties were observed, and the cell showed an efficiency of 4.9×10−3% under AM1.5 illumination.

  3. Controllable thin film crystal growth of a novel squaraine molecule in organic solar cells

    Science.gov (United States)

    Conrad, Brad; Spencer, Susan; Bougher, Cortney; Brown, Jesse; Kelley, Kyle; Heaphy, Patrick; Murcia, Victor; Gallivan, Cameron; Monfette, Amber; Andersen, John; Cody, Jeremy; Coffey, Tonya; Collison, Christopher

    2014-03-01

    We will discuss the formation, structures, and properties of squarine and squarine-PCBM blend thin-films using Atomic Force Microscopy, electrical characterization, UV-VIS-NIR, and Thin-film Xray Diffraction. Film properties are inferred from spectroscopic measurements and are correlated with crystallinity as determined by TFXRD and AFM. A comprehensive explanation of DiPSQ(OH)2 structures is provided and related to measured efficiencies up to 4.3. By controlling the blend ratio and other fabrication conditions, crystalline regions of higher mobility can be developed so as to make significant gains in power conversion efficiency, necessary to achieve long term goals for commercially viable NIR-active OPV devices. AppState Office of Student Research; Synthesis by Cody group. BRC thanks ORAU Junior Faculty Enhancement Award. SDS, CPG and AM thank DOE Award number DE-FG36-08GO88110. CJC and JAC thank NSF award number CBET-1236372.

  4. Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ahmet PEKSÖZ

    2016-08-01

    Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

  5. Formation of ultra Si/Ti nano thin film for enhancing silicon solar cell efficiency

    Science.gov (United States)

    Adam, T.; Dhahi, T. S.; Mohammed, M.; Al-Hajj, A. M.; Hashim, U.

    2017-10-01

    An alternative electrical source has l has become the major quest of every researchers due to it numerous advantages and applications of power supply and as electronic devices are becoming more and more portable. A highly efficient power supply is become inevitable. Thus. in this study, present ultrasonic based assisted fabrication of electrochemical silicon-Titanium nano thin film by in-house simple technique, uniformly silicon Nano film was fabricated and etched with HF (40%): C2H5OH (99%):1:1, < 20 nm pore diameter of silicon was fabricated. The surface and morphology reveal that the method produce uniform nano silicon porous layer with smaller silicon pores with high etching efficiency. The silicon-Titanium integrated nano porous exhibited excellent observation properties with low reflection index ~ 1.1 compared to silicon alone thin film.

  6. Theoretical simulation of performances in CIGS thin-film solar cells with cadmium-free buffer layer

    Science.gov (United States)

    Luo, Kang; Sun, Yulin; Zhou, Liyu; Wang, Fang; Wu, Fang

    2017-08-01

    Copper indium gallium selenium (CIGS) thin film solar cells have become one of the hottest topics in solar energy due to their high photoelectric transformation efficiency. To real applications, CIGS thin film is covered by the buffer layer and absorption layer. Traditionally, cadmium sulfide (CdS) is inserted into the middle of the window layer (ZnO) and absorption layer (CIGS) as a buffer layer. However, the application of the GIGS/CdS thin film solar cells has been limited because of the environmental pollution resulting from the toxic cadmium atom. Although zinc sulfide (ZnS) has been proposed to be one of the candidates, the performance of such battery cells has not been investigated. Here, in this paper, we systematically study the possibility of using zinc sulfide (ZnS) as a buffer layer. By including the effects of thickness, concentration of a buffer layer, intrinsic layer and the absorbing layer, we find that photoelectric transformation efficiency of ZnO/ZnS(n)/CIGS(i)/CIGS(p) solar cell is about 17.22%, which is qualified as a commercial solar cell. Moreover, we also find that the open-circuit voltage is ∼0.60 V, the short-circuit current is ∼36.99 mA/cm2 and the filled factor is ∼77.44%. Therefore, our results suggest that zinc sulfide may be the potential candidate of CdS as a buffer layer. Project supported by the NSF of Jiangsu Province (No. BK20131420), the Postgraduate Innovation Project of Jiangsu Province (No. KYLX15_0926), and the NJFU Outstanding Young Scholars Funding.

  7. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  8. Photoelectrode thin film of dye-sensitized solar cell fabricated by anodizing method and spin coating and electrochemical impedance properties of DSSC

    International Nuclear Information System (INIS)

    Chang, Ho; Chen, Chih-Hao; Kao, Mu-Jung; Chien, Shu-Hua; Chou, Cheng-Yi

    2013-01-01

    The paper studies the photoelectrode thin film of dye-sensitized solar cell (DSSC) fabricated by anodizing method, explores the structure and properties of the fabricated photoelectrode thin film, measures the photoelectric conversion efficiency of DSSC, and finds the electrochemical impedance properties of DSSCs assembled by photoelectrode thin films in different thicknesses. Besides, in order to increase the specific surface area of nanotubes, this paper deposits TiO 2 nanoparticles (TNP) on the surface of titanium oxide nanotube (TNT). As shown in experimental results, the photoelectric conversion efficiency of the DSSC fabricated by the study rises to 6.5% from the original 5.43% without TnB treatment, with an increase of photoelectric conversion efficiency by 19.7%. In addition, when the photoelectrode thin film is fabricated with mixture of TNTs and TNP in an optimal proportion of 2:8 and the photoelectrode thin film thickness is 15.5 μm, the photoelectric conversion efficiency can reach 7.4%, with an increase of 36.7% from the original photoelectric conversion efficiency at 5.43%. Besides, as found in the results of electrochemical impedance analysis, the DSSC with photoelectrode thin film thickness at 15.5 μm has the lowest charge-conduction resistance (R k ) value 9.276 Ω of recombined electron and conduction resistance (R w ) value 3.25 Ω of electrons in TiO 2 .

  9. Low Cost Production of Thin-Film Photovoltaic Cells Final Report

    Energy Technology Data Exchange (ETDEWEB)

    McCamy, James [PPG Industries, Inc. Glass R& D, Cheswick, PA (United States); Hung, Cheng-Hung [PPG Industries, Inc. Glass R& D, Cheswick, PA (United States); Ma, Zhixun [PPG Industries, Inc. Glass R& D, Cheswick, PA (United States)

    2015-06-04

    The objective of this project was to determine the feasibility of online deposition of the active layer for thin-film PV modules. The envisioned PV online manufacturing process has a number of discrete unit operations integrated into a single process. Demonstration of feasibility would be deemed successful with the individual demonstration of each of these unit operations and development of the integrated process was not within the scope of this phase.

  10. Rapid thermal processing for production of chalcopyrite thin films for solar cells: Design, analysis, and experimental implementation

    Science.gov (United States)

    Lovelett, Robert J.

    The direct conversion of solar energy to electricity, or photovoltaic energy conversion, has a number of environmental, social, and economic advantages over conventional electricity generation from fossil fuels. Currently, the most commonly-used material for photovoltaics is crystalline silicon, which is now produced at large scale and silicon-based devices have achieved power conversion efficiencies over 25% However, alternative materials, such as inorganic thin films, offer a number of advantages including the potential for lower manufacturing costs, higher theoretical efficiencies, and better performance in the field. One of these materials is the chalcopyrite Cu(InGa)(SeS) 2, which has demonstrated module efficiencies over 17% and cell efficiencies over 22%. Cu(InGa)(SeS)2 is now in the early stages of commercialization using a precursor reaction process referred to as a "selenization/sulfization" reaction. The precursor reaction process is promising because it has demonstrated high efficiency along with the large area (approximately 1 m2) uniformity that is required for modules. However, some challenges remain that limit the growth of the chalcopyrite solar cell industry including: slow reactions that limit process throughput, a limited understanding of complex reaction kinetics and transport phenomena that affect the through-film composition, and the use of highly toxic H2Se in the reaction process. In this work, I approach each of these challenges. First, to improve process throughput, I designed and implemented a rapid thermal processing (RTP) reactor, whereby the samples are heated by a 1000 W quartz-halogen lamp that is capable of fast temperature ramps and high temperature dwells. With the reactor in place, however, achieving effective temperature control in the thin film material system is complicated by two intrinsic process characteristics: (i) the temperature of the Cu(InGa)(SeS)2 film cannot be measured directly, which leaves the system without

  11. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  12. The Impact of Graphene on the Fabrication of Thin Film Solar Cells: Current Status and Future Prospects.

    Science.gov (United States)

    Shi, Zhengqi; Jayatissa, Ahalapitiya H

    2017-12-27

    Commercial solar cells have a power conversion efficiency (PCE) in the range of 10-22% with different light absorbers. Graphene, with demonstrated unique structural, physical, and electrical properties, is expected to bring the positive effects on the development of thin film solar cells. Investigations have been carried out to understand whether graphene can be used as a front and back contacts and active interfacial layer in solar cell fabrication. In this review, the current progress of this research is analyzed, starting from the graphene and graphene-based Schottky diode. Also, the discussion was focused on the progress of graphene-incorporated thin film solar cells that were fabricated with different light absorbers, in particular, the synthesis, fabrication, and characterization of devices. The effect of doping and layer thickness of graphene on PCE was also included. Currently, the PCE of graphene-incorporated bulk-heterojunction devices have enhanced in the range of 0.5-3%. However, device durability and cost-effectiveness are also the challenging factors for commercial production of graphene-incorporated solar cells. In addition to the application of graphene, graphene oxides have been also used in perovskite solar cells. The current needs and likely future investigations for graphene-incorporated solar cells are also discussed.

  13. The Impact of Graphene on the Fabrication of Thin Film Solar Cells: Current Status and Future Prospects

    Science.gov (United States)

    Shi, Zhengqi; Jayatissa, Ahalapitiya H.

    2017-01-01

    Commercial solar cells have a power conversion efficiency (PCE) in the range of 10–22% with different light absorbers. Graphene, with demonstrated unique structural, physical, and electrical properties, is expected to bring the positive effects on the development of thin film solar cells. Investigations have been carried out to understand whether graphene can be used as a front and back contacts and active interfacial layer in solar cell fabrication. In this review, the current progress of this research is analyzed, starting from the graphene and graphene-based Schottky diode. Also, the discussion was focused on the progress of graphene-incorporated thin film solar cells that were fabricated with different light absorbers, in particular, the synthesis, fabrication, and characterization of devices. The effect of doping and layer thickness of graphene on PCE was also included. Currently, the PCE of graphene-incorporated bulk-heterojunction devices have enhanced in the range of 0.5–3%. However, device durability and cost-effectiveness are also the challenging factors for commercial production of graphene-incorporated solar cells. In addition to the application of graphene, graphene oxides have been also used in perovskite solar cells. The current needs and likely future investigations for graphene-incorporated solar cells are also discussed. PMID:29280964

  14. 13.9%-efficient CdTe polycrystalline thin-film solar cells with an infrared transmission of {approx} 50%

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Zhou, J.; Duda, A.; Keane, J.C.; Gessert, T.A.; Yan, Y.; Noufi, R. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2005-07-01

    To fabricate a high-efficiency polycrystalline thin-film tandem cell, the most critical work is to make a high-efficiency top cell ( > 15%) with high bandgap (E{sub g} = 1.5-1.8 eV) and high transmission (T > 70%) in the near-infrared (NIR) wavelength region. The CdTe cell is one of the candidates for the top cell, because CdTe state-of-the-art single-junction devices with efficiencies of more than 16% are available, although its bandgap (1.48 eV) is slightly lower for a top cell in a current-matched dual-junction device. In this paper, we focus on the development of a: (1) thin, low-bandgap Cu{sub x}Te transparent back-contact; and (2) modified CdTe device structure, including three novel materials: cadmium stannate transparent conducting oxide (TCO), ZnSnO{sub x} buffer layer, and nanocrystalline CdS:O window layer developed at NREL, as well as the high-quality CdTe film, to improve transmission in the NIR region while maintaining high device efficiency. We have achieved an NREL-confirmed 13.9%-efficient CdTe transparent solar cell with an infrared transmission of {approx}50% and a CdTe/CIS polycrystalline mechanically stacked thin-film tandem cell with an NREL-confirmed efficiency of 15.3%. (Author)

  15. Influence of the grid and cell design on the power output of thin film Cu(InGa)Se2 cells

    NARCIS (Netherlands)

    Deelen, J. van; Frijters, C.; Suijlen, M.; Barink, M.

    2015-01-01

    The effect of the front contact characteristics on the working of monolithically integrated thin film solar panels and effective ways of improving the front contact are discussed. Efficiencies were calculated for various cell lengths and scribing areas in between cells (interconnection dead zone

  16. Oxygen Reduction Reaction Activity of Platinum Thin Films with Different Densities

    Energy Technology Data Exchange (ETDEWEB)

    Ergul, Busra; Begum, Mahbuba; Kariuki, Nancy; Myers, Deborah J.; Karabacak, Tansel

    2017-08-24

    Platinum thin films with different densities were grown on glassy carbon electrodes by high pressure sputtering deposition and evaluated as oxygen reduction reaction catalysts for polymer electrolyte fuel cells using cyclic voltammetry and rotating disk electrode techniques in aqueous perchloric acid electrolyte. The electrochemically active surface area, ORR mass activity (MA) and specific activity (SA) of the thin film electrodes were obtained. MA and SA were found to be higher for low-density films than for high-density film.

  17. Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Jan

    2011-09-26

    This thesis deals with atmospheric contamination and cross-contamination of boron (single-chamber process) of the intrinsic absorber layer (i-layer) of p-i-n thin film solar cells based on hydrogenated amorphous silicon. The atmospheric contaminations were introduced by means of intentional leaks. Hereby, the focus is on the influence of contamination species (oxygen and nitrogen), quantity of contamination (leak flow), source of contamination (leaks at chamber wall or in the process gas pipe), and plasma power on the properties of solar cells. Thereby, the minimum requirements for the purity of vacuum and process gas as well as leak conditions of the recipient and gas pipe system have been determined. Additionally, deposition regimes were developed, where the incorporation of impurities is significantly suppressed. For standard processes critical levels of nitrogen and oxygen contamination are determined to be {proportional_to} 4 x 10{sup 18} cm{sup -3} and {proportional_to} 2 x 10{sup 19} cm{sup -3}, respectively, for a leak situated at the chamber wall. Above these concentrations the solar cell efficiency deteriorates. In literature, incorporation of oxygen and nitrogen in doping configuration is assumed to be the reason for the cell deterioration. This assumption is supported by additional material studies of contaminated absorber layers done in this work. The difference in critical concentration is due to the higher doping efficiency of nitrogen compared to that for oxygen. Nevertheless, applying an air leak the critical concentrations of O and N are reached almost simultaneously since the incorporation probability of oxygen is about one order of magnitude higher compared to that for nitrogen. Applying a leak in the process gas pipe the critical oxygen contamination level increases to {proportional_to} 2 x 10{sup 20} cm{sup -3} whereas the critical nitrogen level remains unchanged compared to a chamber wall leak. Applying a deposition regime with a very high

  18. Theoretical study of quaternary compounds as thin-film solar cell absorber

    International Nuclear Information System (INIS)

    Su, Huai Wei

    2010-01-01

    Full text : Design of chalcogenide photovoltaic absorbers is carried out systematically through sequential cation mutation, from binary to ternary to quaternary compounds, using first-principles electronic structure calculations. Several universal trends are found for the ternary and two classes of quaternary chalcogenides. For example, the lowest-energy structure always has larger lattice constant a, smaller tetragonal distortion parameter η=c/2a, and larger band gap than the metastable structures for common-row cation mutations. The band gap is reduced during the mutation. The band gap decreases from binary II-VI to ternary I-III-VI 2 are mostly due to the p-d repulsion in the valence band, the decreases from ternary I-III-VI 2 to quaternary I 2 -II-IV-VI 4 chalcogenides are due to the downshift in the conduction band caused by the wavefunction localization on the group IV cation site. It was found that I 2 -II-IV-VI 4 compounds are more stable in the kesterite structure, whereas the widely-assumed stannite structure reported in the literature is most likely due to partial disorder in the I-II layer of the kesterite phase. Among the derived quaternary compounds, Cu 2 ZnSnS 4 (CZTS) is one of the ideal candidate absorber materials for thin-film solar cells with an optimal band gap, high absorption coefficient, abundant elemental components, and is adaptable to various growth techniques. It was performed a series of first-principles electronic structure calculations for CZTS. Also it was found that in the ground state kesterite structure, (i) the chemical potential region that CZTS can form is very small. Therefore, it will be very difficult to obtain high quality stoichiometric CZTS samples; (ii) The dominant p-type acceptor in CZTS is CuZn, however, the associated acceptor level is relatively high, suggesting that p-type doping in CZTS is more difficult than ternary compounds such as CuInSe 2 ; (iii) The formation of the self-compensated defect pair [Cu

  19. Crystalline MoOx Thin-Films as Hole Transport Layers in DBP/C70 Based Organic Solar Cell

    DEFF Research Database (Denmark)

    Ahmadpour, Mehrad; Fernandes Cauduro, André Luis; dos Reis, Roberto

    Transition Metal Oxides such as Molybdenum oxide (MoOx) have been intensively used as hole transport layers in different organic, inorganic and hybrid technologies, demonstrating also important improvements on the power conversion efficiency as well as on the stability of different types of solar...... cells. Among several different deposition methods available for fabrication of MoOx thin-films, reactive sputtering arises as an interesting alternative due to its full control over the deposition parameters such as the deposition power, reactive gas partial pressure and the deposition rate....

  20. Study of smart antibacterial PCL-xFe3O4thin films using mouse NIH-3T3 fibroblast cells in vitro.

    Science.gov (United States)

    Pai B, Ganesh; Kulkarni, Ajay V; Jain, Shilpee

    2017-05-01

    Surface energy plays a major role in prokaryotic and eukaryotic cell interactions with biomedical devices. In the present study, poly(ε-caprolactone)-xFe 3 O 4 nanoparticles (PCL-xFO NPs; x = 0, 10, 20, 30, 40, 60 wt% FO concentration in PCL) composite thin films were developed for skin tissue regeneration. The surface properties in terms of roughness, surface energy, wettability of the thin films were altered with the incorporation of Fe 3 O 4 NPs. These thin films show antimicrobial properties and cyto-compatibility with NIH 3T3 mouse embryonic fibroblast cells. The porosity and thickness of the films were controlled by varying RPM of the spin coater. Interestingly, at 1000 RPM the roughness of the film decreased with increasing concentrations of FO NPs in PCL, whereas the surface energy increased with increasing FO NPs concentrations. Furthermore, the spreading of NIH-3T3 cells grown on PCL-xFO thin films was less as compared to control (TCPS), however cells overcame this effect after 48 h of seeding and cells spread similarly to those grown on TCPS after 48 h. Also, the incorporation of FO NPs in thin films induced inner membrane permeabilization in E. coli bacteria leading to bacterial cell death. The viability of E. coli bacteria decreased with increasing concentration of FO NPs in PCL. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 105B: 795-804, 2017. © 2016 Wiley Periodicals, Inc.

  1. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  2. Newtech - Comparison of three 1 kW thin-film solar cell installations; Newtech. Vergleich 3 x 1 kWp Duennschichtzellenanlagen

    Energy Technology Data Exchange (ETDEWEB)

    Renken, C.; Haeberlin, H.

    2003-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) presents the results of tests made on 3 types of thin-film solar cells by the photovoltaics laboratory at the University of Applied Science in Burgdorf, Switzerland. The three 1-kW{sub p} installations are all mounted on the flat roof of an industrial building and deliver the power produced to the local electricity utility. The thin-film technologies tested are described. These include copper-indium-diselenide (CIS) cells, amorphous silicon tandem cells and amorphous silicon triple cells. The measurement equipment used is described and the results obtained are discussed. These showed that the CIS cells had the highest annual specific yield and that the triple cells had a relatively high performance ratio at low irradiance levels. The performance of the thin-film modules is also compared to that of conventional, crystalline modules installed at a nearby location.

  3. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  4. A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

    International Nuclear Information System (INIS)

    Park, Se Jin; Moon, Sung Hwan; Min, Byoung Koun; Cho, Yunae; Kim, Ji Eun; Kim, Dong-Wook; Lee, Doh-Kwon; Gwak, Jihye; Kim, Jihyun

    2014-01-01

    Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(In x Ga 1−x )S 2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(In x Ga 1−x )(S 1−y Se y ) 2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm −2 . The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films. (paper)

  5. Scattering matrix analysis for evaluating the photocurrent in hydrogenated-amorphous-silicon-based thin film solar cells.

    Science.gov (United States)

    Shin, Myunghun; Lee, Seong Hyun; Lim, Jung Wook; Yun, Sun Jin

    2014-11-01

    A scattering matrix (S-matrix) analysis method was developed for evaluating hydrogenated amorphous silicon (a-Si:H)-based thin film solar cells. In this approach, light wave vectors A and B represent the incoming and outgoing behaviors of the incident solar light, respectively, in terms of coherent wave and incoherent intensity components. The S-matrix determines the relation between A and B according to optical effects such as reflection and transmission, as described by the Fresnel equations, scattering at the boundary surfaces, or scattering within the propagation medium, as described by the Beer-Lambert law and the change in the phase of the propagating light wave. This matrix can be used to evaluate the behavior of angle-incident coherent and incoherent light simultaneously, and takes into account not only the light scattering process at material boundaries (haze effects) but also nonlinear optical processes within the material. The optical parameters in the S-matrix were determined by modeling both a 2%-gallium-doped zinc oxide transparent conducting oxide and germanium-compounded a-Si:H (a-SiGe:H). Using the S-matrix equations, the photocurrent for an a-Si:H/a-SiGe:H tandem cell and the optical loss in semitransparent a-Si:H solar cells for use in building-integrated photovoltaic applications were analyzed. The developed S-matrix method can also be used as a general analysis tool for various thin film solar cells.

  6. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lare, Y. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Godoy, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, IMN, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Jondo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Abachi, T. [Ecole Normale Superieure, Kouba, Alger (Algeria); Diaz, F.R. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Napo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France)

    2009-04-15

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  7. Thin Film Processes

    CERN Document Server

    Vossen, John L.

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application

  8. Plasmonic back contacts with non-ordered Ag nanostructures for light trapping in thin-film silicon solar cells

    International Nuclear Information System (INIS)

    Paetzold, Ulrich W.; Meier, Matthias; Moulin, Etienne; Smirnov, Vladimir; Pieters, Bart E.; Rau, Uwe; Carius, Reinhard

    2013-01-01

    In this work, we investigate the light trapping of thin-film silicon solar cells which apply plasmonic Ag back contacts with non-ordered Ag nanostructures. The preparation, characterization and three-dimensional electromagnetic simulations of these back contacts with various distributions of non-ordered Ag nanostructures are presented. The measured reflectance spectra of the Ag back contacts with non-ordered nanostructures in air are well reproduced in reflectance spectra derived from the three-dimensional electromagnetic simulations of isolated nanostructures on Ag back contacts. The light–matter interaction of these nanostructures is given by localized surface plasmons and, thus, the measured diffuse reflectance of the back contacts is attributed to plasmon-induced light scattering. A significant plasmonic light-trapping effect in n-i-p substrate-type μc-Si:H thin-film solar cell prototypes which apply a Ag back contact with non-ordered nanostructures is identified when compared with flat reference solar cells

  9. Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

    Science.gov (United States)

    Pinčík, E.; Kobayashi, H.; Takahashi, M.; Fujiwara, N.; Brunner, R.; Glesková, H.; Jergel, M.; Müllerová, J.; Kučera, M.; Falcony, C.; Ortega, L.; Rusnák, J.; Mikula, M.; Zahoran, M.; Juráni, R.; Král, M.

    2004-08-01

    This paper deals with the photoluminescence, structural and electrical properties of chemically passivated a-Si:H based thin films and corresponding thin film solar cells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electrical properties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solar cells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solar cell multilayer structures was achieved which is of primary practical importance.

  10. Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

    International Nuclear Information System (INIS)

    Pincik, E.; Kobayashi, H.; Takahashi, M.; Fujiwara, N.; Brunner, R.; Gleskova, H.; Jergel, M.; Muellerova, J.; Kucera, M.; Falcony, C.; Ortega, L.; Rusnak, J.; Mikula, M.; Zahoran, M.; Jurani, R.; Kral, M.

    2004-01-01

    This paper deals with the photoluminescence, structural and electrical properties of chemically passivated a-Si:H based thin films and corresponding thin film solar cells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electrical properties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solar cells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solar cell multilayer structures was achieved which is of primary practical importance

  11. Analysis of radiation resistance of InGaP/GaAs dual-junction thin-film space solar cell

    International Nuclear Information System (INIS)

    Imaizumi, Mitsuru; Ohshima, Takeshi; Takamoto, Tatsuya

    2010-01-01

    Thin-film III-V multi-junction solar cells can realize the advantages of being high-efficiency and light-weight, as such these cells meets the requirement for higher specific power and lower stowage volume solar panels. Here we report the development results of an InGaP/GaAs thin-film dual-junction (TF2J) solar cell. In this paper, we study the radiation resistance of the TF2J cells with efficiency of 20-23% under AM0.1 sun at 25degC. The cells were subjected to proton irradiation with an energy range of 100keV-10MeV. The results were compared with the radiation resistance of a conventional InGaP/GaAs/Ge triple-junction (3J) cell. In the proton energy range of 200-400keV, radiation resistance of the TF2J cell is superior to that of the 3J cell. Particularly, the 1sc of the TF2J cell is significantly higher than that of the 3J cell after exposure to 380keV protons, which results in higher remaining factor of Pmax for the TF2J cell. In additions, Voc of the cells after the irradiations are almost equivalent, even though the TF2J cell is a dual-junction structure. The higher 1sc of the TF2J cell after irradiation is due to higher radiation resistance of the GaAs subcell according to the comparison of the spectral response. (author)

  12. Optimization of processing and modeling issues for thin film solar cell devices: Final report, February 3, 1997--September 1, 1998

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    2000-02-28

    This final report describes results achieved under a 20-month NREL subcontract to develop and understand thin-film solar cell technology associated to CuInSe{sub 2} and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE's long-range efficiency, reliability and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development and improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to device structure and module encapsulation.

  13. Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

    2015-09-30

    Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

  14. Dual-Layer Nanostructured Flexible Thin-Film Amorphous Silicon Solar Cells with Enhanced Light Harvesting and Photoelectric Conversion Efficiency.

    Science.gov (United States)

    Lin, Yinyue; Xu, Zhen; Yu, Dongliang; Lu, Linfeng; Yin, Min; Tavakoli, Mohammad Mahdi; Chen, Xiaoyuan; Hao, Yuying; Fan, Zhiyong; Cui, Yanxia; Li, Dongdong

    2016-05-04

    Three-dimensional (3-D) structures have triggered tremendous interest for thin-film solar cells since they can dramatically reduce the material usage and incident light reflection. However, the high aspect ratio feature of some 3-D structures leads to deterioration of internal electric field and carrier collection capability, which reduces device power conversion efficiency (PCE). Here, we report high performance flexible thin-film amorphous silicon solar cells with a unique and effective light trapping scheme. In this device structure, a polymer nanopillar membrane is attached on top of a device, which benefits broadband and omnidirectional performances, and a 3-D nanostructure with shallow dent arrays underneath serves as a back reflector on flexible titanium (Ti) foil resulting in an increased optical path length by exciting hybrid optical modes. The efficient light management results in 42.7% and 41.7% remarkable improvements of short-circuit current density and overall efficiency, respectively. Meanwhile, an excellent flexibility has been achieved as PCE remains 97.6% of the initial efficiency even after 10 000 bending cycles. This unique device structure can also be duplicated for other flexible photovoltaic devices based on different active materials such as CdTe, Cu(In,Ga)Se2 (CIGS), organohalide lead perovskites, and so forth.

  15. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/μc-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of θ i = 0 (normal sputtering) and θ i = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at θ i = 80 show the inclined columnar nanostructures compared to those at θ i = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/μc-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of ∝1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at θ i = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of)

    2011-09-15

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/{mu}c-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of {theta}{sub i} = 0 (normal sputtering) and {theta}{sub i} = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at {theta}{sub i} = 80 show the inclined columnar nanostructures compared to those at {theta}{sub i} = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/{mu}c-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of {proportional_to}1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at {theta}{sub i} = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Chen Xinliang; Lin Quan; Ni Jian; Zhang Dekun; Sun Jian; Zhao Ying; Geng Xinhua

    2011-01-01

    Textured surface boron-doped zinc oxide (ZnO:B) thin films were directly grown via low pressure metal organic chemical vapor deposition (LP-MOCVD) on polyethylene terephthalate (PET) flexible substrates at low temperatures and high-efficiency flexible polymer silicon (Si) based thin film solar cells were obtained. High purity diethylzinc and water vapors were used as source materials, and diborane was used as an n-type dopant gas. P-i-n silicon layers were fabricated at ∼ 398 K by plasma enhanced chemical vapor deposition. These textured surface ZnO:B thin films on PET substrates (PET/ZnO:B) exhibit rough pyramid-like morphology with high transparencies (T ∼ 80%) and excellent electrical properties (Rs ∼ 10 Ω at d ∼ 1500 nm). Finally, the PET/ZnO:B thin films were applied in flexible p-i-n type silicon thin film solar cells (device structure: PET/ZnO:B/p-i-n a-Si:H/Al) with a high conversion efficiency of 6.32% (short-circuit current density J SC = 10.62 mA/cm 2 , open-circuit voltage V OC = 0.93 V and fill factor = 64%).

  18. Effect of fluorine plasma treatment with chemically reduced graphene oxide thin films as hole transport layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Youn-Yeol; Kang, Byung Hyun; Lee, Yang Doo; Lee, Sang Bin; Ju, Byeong-Kwon, E-mail: bkju@korea.ac.kr

    2013-12-15

    The inorganic materials such as V{sub 2}O{sub 5}, MoO{sub 3} and WO{sub 3} were investigated to replace PEDOT:PSS as hole transport layer (HTL) in organic electronic devices such as organic solar cells (OSCs) and organic lighting emission diodes. However, these methods require vacuum techniques that are long time process and complex. Here, we report about plasma treatment with SF{sub 6} and CF{sub 4} using reactive ion etching on reduced graphene oxide (rGO) thin films that are obtained using an eco-friendly method with vitamin C. The plasma treated rGO thin films have dipoles since they consist of covalent bonds with fluorine on the surface of rGO. This means it is possible to increase the electrostatic potential energy than bare rGO. Increased potential energy on the surface of rGO films is worth applying organic electronic devices as HTL such as OSCs. Consequently, the power conversion efficiency of OSCs increased more than the rGO films without plasma treatment.

  19. Easily accessible polymer additives for tuning the crystal-growth of perovskite thin-films for highly efficient solar cells.

    Science.gov (United States)

    Dong, Qingqing; Wang, Zhaowei; Zhang, Kaicheng; Yu, Hao; Huang, Peng; Liu, Xiaodong; Zhou, Yi; Chen, Ning; Song, Bo

    2016-03-14

    For perovskite solar cells (Pero-SCs), one of the key issues with respect to the power conversion efficiency (PCE) is the morphology control of the perovskite thin-films. In this study, an easily-accessible additive polyethylenimine (PEI) is utilized to tune the morphology of CH3NH3PbI3-xClx. With addition of 1.00 wt% of PEI, the smoothness and crystallinity of the perovskite were greatly improved, which were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). A summit PCE of 14.07% was achieved for the p-i-n type Pero-SC, indicating a 26% increase compared to those of the devices without the additive. Both photoluminescence (PL) and alternating current impedance spectroscopy (ACIS) analyses confirm the efficiency results after the addition of PEI. This study provides a low-cost polymer additive candidate for tuning the morphology of perovskite thin-films, and might be a new clue for the mass production of Pero-SCs.

  20. Spray-on PEDOT:PSS and P3HT:PCBM Thin Films for Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Morteza Eslamian

    2014-01-01

    Full Text Available PEDOT:PSS electron-blocking layer, and PEDOT:PSS + P3HT:PCBM stacked layers are fabricated by ultrasonic atomization and characterized by scanning electron microscopy (SEM and optical profilometry. The measured thicknesses based on SEM and optical profilometry are quite different, indicating the incapability of measurement techniques for non-uniform thin films. The thickness measurements are compared against theoretical estimations and a qualitative agreement is observed. Results indicate that using a multiple pass fabrication strategy results in a more uniform thin film. It was also found that the film characteristics are a strong function of solution concentration and spraying passes, and a weak function of substrate speed. Film thickness increases with solution concentration but despite the prediction of theory, the increase is not linear, indicating a change in the film porosity and density, which can affect physical and opto-electrical properties. Overall, while spray coating is a viable fabrication process for a wide range of solar cells, film characteristics can be easily altered by a change in process parameters.

  1. Full Sputtering Deposition of Thin Film Solar Cells: A Way of Achieving High Efficiency Sustainable Tandem Cells?

    Science.gov (United States)

    Vilcot, J.-P.; Ayachi, B.; Aviles, T.; Miska, P.

    2017-11-01

    In the first part of this paper, we will show that a sputtering-based fabrication process exhibiting a low environmental footprint has been developed for the fabrication of copper indium gallium selenide (CIGS) absorbing material. Its originality lies in using room temperature sputtering in a pulsed—direct current mode of a single quaternary target followed by a post-anneal. At any stage of the process, selenium or sulfur atmosphere is used. Inert gas is used, respectively argon and a forming gas, for the deposition and annealing step, respectively. CIGS cells have been fabricated using such an absorbing layer. They exhibit an efficiency close to 12%. A tandem cell approach, using a thin film technology in conjunction with the well-established Si technology, is a promising technique, achieving cells with 30%, and higher, efficiency. Such cells are awaited, jointly with a stronger implementation of low environmental footprint technologies, as a vision for 2030. In the first section, sputtering technique has shown its ability to be developed in such a way achieving an environmentally friendly process that can be moreover compatible to be co-integrated with, for example, Si technology. In a second section, we will present a prospective discussion on the materials that can be applied to produce a sustainable approach for such a tandem cell configuration.

  2. 11.3% efficiency Cu(In,Ga)(S,Se)2 thin film solar cells via drop-on-demand inkjet printing

    OpenAIRE

    Lin, Xianzhong; Klenk, Reiner; Wang, Lan; Köhler, Tristan; Albert, Jürgen; Fiechter, Sebastian; Ennaoui, Ahmed; Lux-Steiner, Martha

    2017-01-01

    Although Cu(In,Ga)(S,Se)2 (CIGSe) based thin film solar cells have reached efficiencies exceeding 22% based on vacuum processed CIGSSe absorbers, the supply of indium and gallium might become an issue if CIGSSe thin-film solar cells are produced in very large volumes. It is therefore mandatory to reduce the wastage of indium and gallium during the fabrication process. In this work, we report on a highly efficient precursor utilization, and a vacuum-free, and scalable route to the deposition o...

  3. Thin films on cantilevers

    NARCIS (Netherlands)

    Nazeer, H.

    2012-01-01

    The main goal of the work compiled in this thesis is to investigate thin films for integration in micro electromechanical systems (MEMS). The miniaturization of MEMS actuators and sensors without compromising their performance requires thin films of different active materials with specific

  4. Influence of sulfurization pressure on Cu2ZnSnS4 thin films and solar cells prepared by sulfurization of metallic precursors

    Science.gov (United States)

    He, Jun; Sun, Lin; Chen, Ye; Jiang, Jinchun; Yang, Pingxiong; Chu, Junhao

    2015-01-01

    Effects of sulfurization pressure on composition, morphology and microstructure of kesterite Cu2ZnSnS4 (CZTS) thin films obtained by sulfurization of the metallic layers have been investigated in detail. It is found that the S content in the CZTS thin films is strongly dependent on the sulfurization pressure. The CZTS thin films sulfurized under low sulfurization pressure have S-poor state with a bilayer structure, while it exhibits sufficient amounts of sulfur under high sulfurization pressure with grain growth throughout the entire absorber film. X-ray diffraction data indicate lower sulfurization pressure during the CZTS grain growth process can induce the formation of more structural defects in the CZTS lattice and the CZTS thin films sulfurized under high sulfurization pressure have more random orientation. Furthermore, ZnS and MoS2 phase exist in all samples determined by Fourier transform infrared reflectance spectroscopy as complementary to Raman spectroscopy. The solar cell fabricated with the CZTS thin film under 10 Torr sulfurization pressure shows the best conversion efficiency of 3.52% (VOC = 484 mV, JSC = 14.56 mA cm-2, FF = 50.1%).

  5. Improvement of CH3NH3PbI3 thin film using the additive 1,8-diiodooctane for planar heterojunction perovskite cells

    Science.gov (United States)

    Abdulrahman, Solh; Wang, Chunhua; Cao, Chenghao; Zhang, Chujun; Yang, Junliang; Jiang, Li

    2017-10-01

    The thin-film quality is critical for obtaining high-performance perovskite solar cells (PSCs). The additive 1,8-diiodooctane (DIO) was used to control the morphology and structure of CH3NH3PbI3 perovskite thin films, and planar heterojunction (PHJ) PSCs with an architecture of ITO/PEDOT: PSS/CH3NH3PbI3/PCBM/Al was fabricated. It was found that the DIO played an important role on CH3NH3PbI3 thin-film quality and the performance of PHJ-PSCs. With the optimal volume ratio of 2%, the compact and uniform high-quality CH3NH3PbI3 thin films with enhanced crystallinity and less roughness were achieved, resulting in the great improvement of power conversion efficiency (PCE) from about 4.5% to over 9.0%. The research results indicate that the additive DIO is a simple and effective method to produce high-quality perovskite thin film and accordingly develop high-performance PHJ-PSCs.

  6. Optical thin film devices

    Science.gov (United States)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  7. Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Siol, Sebastian; Dhakal, Tara P.; Gudavalli, Ganesh S.; Rajbhandari, Pravakar P.; DeHart, Clay; Baranowski, Lauryn L.; Zakutayev, Andriy

    2016-06-08

    High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in ..beta..-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure ..beta..-In2S3 could be deposited using a broad range of substrate temperatures between 500 degrees C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (-2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

  8. Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells.

    Science.gov (United States)

    Siol, Sebastian; Dhakal, Tara P; Gudavalli, Ganesh S; Rajbhandari, Pravakar P; DeHart, Clay; Baranowski, Lauryn L; Zakutayev, Andriy

    2016-06-08

    High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in β-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure β-In2S3 could be deposited using a broad range of substrate temperatures between 500 °C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (∼2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

  9. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  10. Electrochemical deposition of molybdenum sulfide thin films on conductive plastic substrates as platinum-free flexible counter electrodes for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Chao-Kuang; Hsieh, Chien-Kuo, E-mail: jack_hsieh@mail.mcut.edu.tw

    2015-06-01

    In this study, pulsed electrochemical deposition (pulsed ECD) was used to deposit molybdenum sulfide (MoS{sub x}) thin films on indium tin oxide/polyethylene naphthalate (ITO/PEN) substrates as flexible counter electrodes (CEs) for dye-sensitized solar cells (DSSCs). The surface morphologies and elemental distributions of the prepared MoS{sub x} thin films were examined using field-emission scanning electron microscope (FE-SEM) equipped with energy-dispersive X-ray spectroscopy. The chemical states and crystallinities of the prepared MoS{sub x} thin films were examined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The optical transmission (T (%)) properties of the prepared MoS{sub x} samples were determined by ultraviolet–visible spectrophotometry. Cyclic voltammetry (CV) and Tafel-polarization measurements were performed to analyze the electrochemical properties and catalytic activities of the thin films for redox reactions. The FE-SEM results showed that the MoS{sub x} thin films were deposited uniformly on the ITO/PEN flexible substrates via the pulsed ECD method. The CV and Tafel-polarization curve measurements demonstrated that the deposited MoS{sub x} thin films exhibited excellent performances for the reduction of triiodide ions. The photoelectric conversion efficiency (PCE) of the DSSC produced with the pulsed ECD MoS{sub x} thin-film CE was examined by a solar simulator. In combination with a dye-sensitized TiO{sub 2} working electrode and an iodine-based electrolyte, the DSSC with the MoS{sub x} flexible CE showed a PCE of 4.39% under an illumination of AM 1.5 (100 mW cm{sup −2}). Thus, we report that the MoS{sub x} thin films are active catalysts for triiodide reduction. The MoS{sub x} thin films are prepared at room temperature and atmospheric pressure and in a simple and rapid manner. This is an important practical contribution to the production of flexible low-cost thin-film CEs based on plastic substrates. The MoS{sub x

  11. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  12. Na-assisted grain growth in CZTS nanoparticle thin films for solar cell applications

    DEFF Research Database (Denmark)

    Engberg, Sara Lena Josefin; Crovetto, Andrea; Hansen, Ole

    2017-01-01

    We have studied the effect of Na in Cu2ZnSnS4 nanoparticle thin films [1]. The as-synthesized CZTS nanoparticles were inherently ligand-free [2], which allows us to use of polar solvents, such as water and ethanol. Another advantage of these particles is that the user- and environmentally......-friendly NaCl salt can be directly dissolved in controllable amounts. This further circumvents the need for later incorporation of dopants, or a ligand-exchange step to functionalize the surface of the nanoparticles. In addition, the homogeneous distribution of Na in the ink allows uniform grain growth within...... the deposited absorber layer. By including Na in the nanoparticle ink, micron-sized grains throughout the whole absorber are achieved after annealing in a sulfur atmosphere at 600°C. The absorber layer appeared to be of full density, and no closed porosity could be detected. In addition, the photoluminescence...

  13. High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

    Science.gov (United States)

    Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

    2012-06-01

    Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

  14. Thin film silicon solar cells: advanced processing and characterization - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Ballif, Ch.

    2008-04-15

    This final report elaborated for the Swiss Federal Office of Energy (SFOE) takes a look at the results of a project carried out at the photovoltaics laboratory at the University of Neuchatel in Switzerland. The project aimed to demonstrate the production of high-efficiency thin-film silicon devices on flexible substrates using low cost processes. New ways of improving processing and characterisation are examined. The process and manufacturing know-how necessary to provide support for industrial partners within the framework of further projects is discussed. The authors state that the efficiency of most devices was significantly improved, both on glass substrates and on flexible plastic foils. The process reproducibility was also improved and the interactions between the different layers in the device are now said to be better understood. The report presents the results obtained and discusses substrate materials, transparent conductors, defect analyses and new characterisation tools. Finally, the laboratory infrastructure is described.

  15. Sputtered of ZnO:Al thin Films for Application in Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Sona Flickyngerova

    2008-01-01

    Full Text Available High transparent and conductive, aluminium - doped zinc oxide thin films (ZnO:Al, were prepared by radio –frequency (RF diode sputtering from ZnO+2 wt. % Al2O3 target on Eutal glass substrates. Surfaces of the samples weretreated by various technological steps during preparation. The ion bombardment and the substrate temperature modified theirstructure, surface morphology, electrical and optical parameters. In this work we present changes between samples preparedat room temperature (RT and at 200°C, between samples on ion etched substrate and non-modified substrate, and effect ofion etching of the sample surface. We measured transmittance, resistivity and microroughness by AFM on all samples.

  16. Nanosecond laser scribing of CIGS thin film solar cell based on ITO bottom contact

    Science.gov (United States)

    Kuk, Seungkuk; Wang, Zhen; Fu, Shi; Zhang, Tao; Yu, Yi Yin; Choi, JaeMyung; Jeong, Jeung-hyun; Hwang, David J.

    2018-03-01

    Cu(In,Ga)Se2 (CIGS) thin films, a promising photovoltaic architecture, have mainly relied on Molybdenum for the bottom contact. However, the opaque nature of Molybdenum (Mo) poses limitations in module level fabrication by laser scribing as a preferred method for interconnect. We examined the P1, P2, and P3 laser scribing processes on CIGS photovoltaic architecture on the indium tin oxide (ITO) bottom contact with a cost-effective nanosecond pulsed laser of 532 nm wavelength. Laser illuminated from the substrate side, enabled by the transparent bottom contact, facilitated selective laser energy deposition onto relevant interfaces towards high-quality scribing. Parametric tuning procedures are described in conjunction with experimental and numerical investigation of relevant mechanisms, and preliminary mini-module fabrication results are also presented.

  17. Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Owen, Jorj Ian

    2011-07-01

    Aluminum-doped zinc oxide (ZnO:Al) can fulfill many requirements in thin-film solar cells, acting as (1) a transparent contact through which the incident light is transmitted, (2) part of the back reflector, and (3) a source of light scattering. Magnetron sputtered ZnO:Al thin-films are highly transparent, conductive, and are typically texturized by post-deposition etching in a dilute hydrochloric acid (HCl) solution to achieve light scattering. The ZnO:Al thin-film electronic and optical properties, as well as the surface texture after etching, depend on the deposition conditions and the post-deposition treatments. Despite having been used in thin-film solar cells for more than a decade, many aspects regarding the growth, effects of heat treatments, environmental stability, and etching of sputtered ZnO:Al are not fully understood. This work endeavors to further the understanding of ZnO:Al for the purpose improving silicon thin-film solar cell efficiency and reducing ZnO:Al production costs. With regard to the growth of ZnO:Al, the influence of various deposition conditions on the resultant electrical and structural properties and their evolution with film thickness were studied. The surface electrical properties extracted from a multilayer model show that while carrier concentration of the surface layer saturates already at film thickness of 100 nm, the surface mobility continues to increases with film thickness, and it is concluded that electronic transport across grain boundaries limits mobility in ZnO:Al thin films. ZnO:Al deposited onto a previously etched ZnO:Al surface grows epitaxially, preserving both the original orientation and grain structure. Further, it is determined that a typical ZnO:Al used in thin-film silicon solar cells grows Zn-terminated on glass substrates. Concerning the affects of heat treatments and stability, it is demonstrated that a layer of amorphous silicon can protect ZnO:Al from degradation during annealing, and the mobility of Zn

  18. Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

    Science.gov (United States)

    Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

    2017-11-22

    In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and

  19. Evaluation of back contact in spray deposited SnS thin film solar cells by impedance analysis.

    Science.gov (United States)

    Patel, Malkeshkumar; Ray, Abhijit

    2014-07-09

    The role of back metal (M) contact in sprayed SnS thin film solar cells with a configuration Glass/F:SnO2/In2S3/SnS/M (M = Graphite, Cu, Mo, and Ni) was analyzed and discussed in the present study. Impedance spectroscopy was employed by incorporating constant phase elements (CPE) in the equivalent circuit to investigate the degree of inhomogeneity associated with the heterojunction and M/SnS interfaces. A best fit to Nyquist plot revealed a CPE exponent close to unity for thermally evaporated Cu, making it an ideal back contact. The Bode phase plot also exhibited a higher degree of disorders associated with other M/SnS interfaces. The evaluation scheme is useful for other emerging solar cells developed from low cost processing schemes like spray deposition, spin coating, slurry casting, electrodeposition, etc.

  20. Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.

    Science.gov (United States)

    Tsuboi, Yuka; Wang, Feijiu; Kozawa, Daichi; Funahashi, Kazuma; Mouri, Shinichiro; Miyauchi, Yuhei; Takenobu, Taishi; Matsuda, Kazunari

    2015-09-14

    Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

  1. Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

    Science.gov (United States)

    Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

    2017-11-01

    A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

  2. Photovoltaic installation with amorphous thin-film cells on a gymnasium roof; Dachanlage Turnhalle Wiesendangen mit amorphen Duennschichtzellen. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Stettler, S.; Toggweiler, P.

    2008-03-15

    This illustrated final report for the Swiss Federal Office of Energy (SFOE) reports on a photovoltaic installation on the roof of the gymnasium of a school in Wiesendangen, Switzerland. The installation features amorphous thin-film solar cells. The solar panels were mounted on the existing roof with the help of the schoolchildren within the framework of the Greenpeace solar project for young persons. Measurements on the performance of the installation were made and the results are compared with those obtained at a nearby installation that uses crystalline solar cells. The energy production figures measured are commented on and the advantages offered by the solar modules used - particularly on their temperature behaviour - are briefly discussed.

  3. Numerical Analysis of Efficiency Enhancement in Plasmonic Thin-Film Solar Cells by Using the SILVACO TCAD Simulator

    International Nuclear Information System (INIS)

    Kim Un-Chol; Jiang Xiao-Qing

    2012-01-01

    A physical model for simulating plasmonic solar cells (SCs) using the SILVACO TCAD simulator is established and the effects of some factors on the efficiency enhancement of the amorphous silicon thin film SCs are simulated. Through this simulation, it is demonstrated that our method can successfully simulate the optical and electrical properties of plasmonic solar cells without the overestimation of the characteristics and without the neglect of parameter change in the device operation process. It is shown that not only the size and kind of metal nanoparticles but also other factors, such as the surrounding medium, the distance from the bottom of particles to the device surface, and the light incident angle, play important roles in the optical and electrical properties of plasmonic SCs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Thin film hydrogen sensor

    Science.gov (United States)

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  5. Impact of one-dimensional photonic crystal back reflector in thin-film c-Si solar cells on efficiency

    Science.gov (United States)

    Jalali, Tahmineh

    2018-05-01

    In this work, the effect of one-dimensional photonic crystal on optical absorption, which is implemented at the back side of thin-film crystalline silicon (c-Si) solar cells, is extensively discussed. The proposed structure acts as a Bragg reflector which reflects back light to the active layer as well as nanograting which couples the incident light to enhance optical absorption. To understand the optical mechanisms responsible for the enhancement of optical absorption, quantum efficiency and current density for all structures are calculated and the effect of influential parameters, such as grating period is investigated. The results confirm that our proposed structure have a great deal for substantial efficiency enhancement in a broad range from 400 to 1100 nm.

  6. XPS characterization of sensitized n-TiO{sub 2} thin films for dye-sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Patrocinio, Antonio Otavio T. [Laboratory of Inorganic Photochemistry and Energy Conversion, Instituto de Quimica, Universidade de Sao Paulo (Brazil); Paniago, Eucler B. [Departamento de Quimica, Universidade Federal de Ouro Preto (Brazil); Paniago, Roberto M. [Departamento de Fisica, Universidade Federal de Minas Gerais (Brazil); Iha, Neyde Y. Murakami [Laboratory of Inorganic Photochemistry and Energy Conversion, Instituto de Quimica, Universidade de Sao Paulo (Brazil)], E-mail: neydeiha@iq.usp.br

    2008-01-15

    TiO{sub 2} thin films, employed in dye-sensitized solar cells, were prepared by the sol-gel method or directly by Degussa P25 oxide and their surfaces were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The effect of adsorption of the cis-[Ru(dcbH{sub 2}){sub 2}(NCS){sub 2}] dye, N3, on the surface of films was investigated. From XPS spectra taken before and after argon-ion sputtering procedure, the surface composition of inner and outer layers of sensitized films was obtained and a preferential etching of Ru peak in relation to the Ti and N ones was identified. The photoelectrochemical parameters were also evaluated and rationalized in terms of the morphological characteristics of the films.

  7. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

    Science.gov (United States)

    Rajanna, Pramod M.; Gilshteyn, Evgenia P.; Yagafarov, Timur; Aleekseeva, Alena K.; Anisimov, Anton S.; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G.

    2018-03-01

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

  8. Photoluminescence of epitactical and polycrystalline CuInS2 layers for thin-film solar cells

    International Nuclear Information System (INIS)

    Eberhardt, J.

    2007-01-01

    The present thesis deals with one- and polycrystalline CuInS 2 absorber layers for thin-film solar cells and especially with their optical and structural characterization. By means of detailed temperature- and power-dependent photoluminescence measurements in epitactical and polycrystalline absorber layers different radiative transitions could be analyzed and identified. The spectra were dominated by broad luminescence bands of deep perturbing levels. The implantation of hydrogen at low energies led to a passivation of these perturbing levels. On the base of the optical studies on epitactical and polycrystalline absorber layers a new improved defect model for CuInS 2 could be developed. The model contains two donor and two acceptor levels with following ionization energies: D-1=46 meV, D-2=87 meV, A-1=70 meV, and A-2=119 meV

  9. Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

    NARCIS (Netherlands)

    Verkerk, A.D.; de Jong, M.M.; Rath, J.K.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

    2009-01-01

    In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by

  10. Transmission Electron Microscopy of the Textured Silver Back Reflector of a Thin Film Silicon Solar Cell: From Crystallography to Optical Absorption

    DEFF Research Database (Denmark)

    Duchamp, Martial; Söderström, K.; Jeangros, Q.

    2011-01-01

    The study of light trapping in amorphous, microcrystalline and micromorph thin-film Si solar cells is an important and active field of investigation. It has been demonstrated that the use of a rough Ag back-reflector lead to an increase of short circuit current but also to losses through the crea...

  11. Efficient light incoupling into silicon thin-film solar cells by anti-reflecting MgO/high-compact-AZO with air-side textured glass

    International Nuclear Information System (INIS)

    Kang, Dong-Won; Han, Min-Koo; Lee, Heon-Min

    2013-01-01

    Light incoupling effects have been enhanced at front interfaces of silicon (Si) thin-film solar cells. Firstly, a MgO thin film was introduced at glass substrate/Al-doped ZnO (AZO) interface for anti-reflection effect. We additionally found that the surface morphology of AZO films grown on MgO film after texture-etching is dependent on the compactness of AZO. For high-compact AZO films, the texture-etched MgO/AZO double layer exhibited significantly enhanced light-scattering capability. Secondly, we made textured surfaces at air/glass interface through simple plasma-etching without sacrificial layers or masks by optimizing the etching pressure. The additional air-side texture contributed to further improvement of total light scattering from the MgO/AZO-coated glass substrate. Fabricated microcrystalline Si thin-film solar cells employing the MgO coated glass with air-side surface texture showed decreased cell reflectance and increased quantum efficiency. The J sc increased from 21.7 to 26.5 mA cm −2 and final efficiency of 9.49% was achieved. Based on our experimental results, the suggested structure, the MgO coating on glass substrate of which air-side surface is texture-etched, can offer a promising approach to improve the light incoupling and efficiency of Si thin-film solar cells. (paper)

  12. Complementary Characterization of Cu(In,Ga)Se₂ Thin-Film Photovoltaic Cells Using Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Atom Probe Tomography.

    Science.gov (United States)

    Jang, Yun Jung; Lee, Jihye; Jeong, Jeung-Hyun; Lee, Kang-Bong; Kim, Donghwan; Lee, Yeonhee

    2018-05-01

    To enhance the conversion performance of solar cells, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is required. In this study, we determined the average concentration of the major elements (Cu, In, Ga, and Se) in fabricated Cu(In,Ga)Se2 (CIGS) thin films, using inductively coupled plasma atomic emission spectroscopy, X-ray fluorescence, and wavelengthdispersive electron probe microanalysis. Depth profiling results for CIGS thin films with different cell efficiencies were obtained using secondary ion mass spectrometry and Auger electron spectroscopy to compare the atomic concentrations. Atom probe tomography, a characterization technique with sub-nanometer resolution, was used to obtain three-dimensional elemental mapping and the compositional distribution at the grain boundaries (GBs). GBs are identified by Na increment accompanied by Cu depletion and In enrichment. Segregation of Na atoms along the GB had a beneficial effect on cell performance. Comparative analyses of different CIGS absorber layers using various analytical techniques provide us with understanding of the compositional distributions and structures of high efficiency CIGS thin films in solar cells.

  13. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    Science.gov (United States)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

    2015-04-01

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×1016 atoms/cm3) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  14. Characterization of the Organic Thin Film Solar Cells with Active Layers of PTB7/PC71BM Prepared by Using Solvent Mixtures with Different Additives

    Directory of Open Access Journals (Sweden)

    Masakazu Ito

    2014-01-01

    Full Text Available Organic thin film solar cells (OTFSCs were fabricated with blended active layers of poly[[4,8-bis[(2-ethylhexyloxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexylcarbonyl]thieno[3,4-b]thiophenediyl

  15. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alaa Ayad Al-mebir

    2016-01-01

    Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

  16. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  17. Laser processing for thin-film photovoltaics

    Science.gov (United States)

    Compaan, Alvin D.

    1995-04-01

    Over the past decade major advances have occurred in the field of thin- film photovoltaics (PV) with many of them a direct consequence of the application of laser processing. Improved cell efficiencies have been achieved in crystalline and polycrystalline Si, in hydrogenated amorphous silicon, and in two polycrystalline thin-film materials. The use of lasers in photovoltaics includes laser hole drilling for emitter wrap-through, laser trenching for buried bus lines, and laser texturing of crystalline and polycrystalline Si cells. In thin-film devices, laser scribing is gaining increased importance for module interconnects. Pulsed laser recrystallization of boron-doped hydrogenated amorphous silicon is used to form highly conductive p-layers in p-i-n amorphous silicon cells and in thin-film transistors. Optical beam melting appears to be an attractive method for forming metal semiconductor alloys for contact formation. Finally, pulsed lasers are used for deposition of the entire semiconductor absorber layer in two types of polycrystalline thin-film cells-those based on copper indium diselenide and those based on cadmium telluride. In our lab we have prepared and studied heavily doped polycrystalline silicon thin films and also have used laser physical vapor deposition (LPVD) to prepare 'all-LPVD' CdS/CdTe solar cells on glass with efficiencies tested at NREL at 10.5%. LPVD is highly flexible and ideally suited for prototyping PV cells using ternary or quaternary alloys and for exploring new dopant combinations.

  18. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. [University of South Florida, Tampa, FL (United States)

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  19. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    International Nuclear Information System (INIS)

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  20. Comparative study of water and ammonia rinsing processes of potassium fluoride-treated Cu(In,Ga)Se2 thin film solar cells

    Science.gov (United States)

    Khatri, Ishwor; Shudo, Kosuke; Matsuura, Junpei; Sugiyama, Mutsumi; Nakada, Tokio

    2017-08-01

    In this work, potassium fluoride (KF)-treated Cu(In,Ga)Se2 (CIGS) thin films were rinsed in ammonia and water solutions before buffer layer (CdS) deposition and the effects of rinsing on photovoltaic properties were investigated. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) measurements revealed that sodium atoms out-diffused at the surface region during KF deposition. Water and ammonia rinsing processes of KF-treated CIGS thin films reduced alkali metals from the surface. However, sodium at the Cu-depleted surface layer remained at a high concentration, suggesting the occupation of Cu vacancies with sodium atoms. On the other hand, ammonia rinsing removed the Cu-poor region from the surfaces of KF-treated CIGS thin films affecting the growth (or nucleation) of the CdS layer. The surface coverage of the CdS layer deposited on the ammonia-rinsed KF-treated CIGS thin film was inferior to than that of water-rinsed samples, resulting in the poor cell performance due to an increased interface recombination.

  1. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se2 thin-film solar cell absorbers

    Science.gov (United States)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

    2014-12-01

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for "realistic" surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In1-xGax)Se2 thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH3-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is - apart from a slight change in surface composition - identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  2. Water-soluble polyelectrolyte-grafted multiwalled carbon nanotube thin films for efficient counter electrode of dye-sensitized solar cells.

    Science.gov (United States)

    Han, Jinkyu; Kim, Hyunju; Kim, Dong Young; Jo, Seong Mu; Jang, Sung-Yeon

    2010-06-22

    Water-soluble, polyelectrolyte-grafted multiwalled carbon nanotubes (MWCNTs), MWCNT-g-PSSNa, were synthesized using a "grafting to" route. MWCNT-g-PSSNa thin films fabricated by an electrostatic spray (e-spray) technique were used as the counter electrode (CE) for dye-sensitized solar cells (DSSCs). The e-sprayed MWCNT-g-PSSNa thin-film-based CEs (MWCNT-CE) were uniform over a large area, and the well-exfoliated MWCNTs formed highly interconnected network structures. The electrochemical catalytic activity of the MWCNT-CE at different thicknesses was investigated. The MWCNT-g-PSSNa thin film showed high efficiency as a CE in DSSCs. The power conversion efficiency (PCE) of the DSSCs using the MWCNT-g-PSSNa thin-film-based CE (DSSC-MWCNT) was >6% at a CE film thickness of approximately 0.3 microm. The optimum PCE was >7% at a film thickness of approximately 1 microm, which is 20-50 times thinner than conventional carbon-based CE. The charge transfer resistance at the MWCNT-CE/electrolyte interface was 1.52 Omega cm(2) at a MWCNT-CE thickness of 0.31 microm, which is lower than that of a Pt-CE/electrolyte interface, 1.78 Omega cm(2). This highlights the potential for the low-cost CE fabrication of DSSCs using a facile deposition technique from an environmentally "friendly" solution at low temperatures.

  3. Evaluation of electrical shunt resistance in laser scribed thin-films for CIGS solar cells on flexible substrates

    Science.gov (United States)

    Markauskas, E.; Gečys, P.; Račiukaitis, G.

    2015-03-01

    Formation of serial interconnects in thin-film solar cells is an important step for upscaling production yield over large areas. Laser scribing is a promising tool for monolithic interconnect formation in CIGS solar cell module. However, evaluation of alterations in electrical properties of the cells during the laser scribing is not a trivial task, especially for cells with flexible substrates when production is based on roll-to-roll processes. We applied the technique of nested circular scribes proposed by K. Zimmer et. al. for the in-line quality evaluation of the P3 scribing processes in CIGS solar cells on polyimide. Scribing experiments were performed using picosecond laser working at 532 nm wavelength. Parallel resistance values of the cells during the formation of P3 scribes were extracted by analyzing I-V characteristics of the measured photovoltaic devices. Integration of laser scribing experiments with the on-line electrical characterization facilitated optimization of the laser processes and increased the measurement accuracy of shunt formation during the laser scribing.

  4. Sputtered nickel oxide thin film for efficient hole transport layer in polymer–fullerene bulk-heterojunction organic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Widjonarko, N. Edwin [Univ. of Colorado, Boulder, CO (United States). Dept. of Physics; National Renewable Energy Lab. (NREL), Golden, CO (United States); Ratcliff, Erin L. [Univ. of Arizona, Tucson, AZ (United States). Dept. of Chemistry and Biochemistry; Perkins, Craig L. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Sigdel, Ajaya K. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Denver, CO (United States). Dept. of Physics and Astronomy; Zakutayev, Andriy [National Renewable Energy Lab. (NREL), Golden, CO (United States); Ndione, Paul F. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Gillaspie, Dane T. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Ginley, David S. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Olson, Dana C. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Berry, Joseph J. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2012-03-01

    Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are promising thin-film renewable energy conversion options due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication.

  5. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    International Nuclear Information System (INIS)

    Hsu, Feng-Hao; Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song; Houng, Mau-Phon

    2013-01-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10 −4 Ω cm, carrier mobility of 30 cm 2 /V s, highest carrier concentration of 4.9 × 10 20 cm −3 , and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  6. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Feng-Hao [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China); Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song [Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Road, Niaosong District, Kaohsiung City 833, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China)

    2013-09-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10{sup −4} Ω cm, carrier mobility of 30 cm{sup 2}/V s, highest carrier concentration of 4.9 × 10{sup 20} cm{sup −3}, and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  7. Solid polymer MEMS-based fuel cells

    Science.gov (United States)

    Jankowski, Alan F [Livermore, CA; Morse, Jeffrey D [Pleasant Hill, CA

    2008-04-22

    A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. The electrolyte layer can consist of either a solid oxide or solid polymer material, or proton exchange membrane electrolyte materials may be used. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

  8. Long-Life MEAs and Catalysts for PEM Electrolyzers/Fuel Cells Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Nanostructured Thin Films (NSTF), used as substrates for catalysts, have proven to be highly active for oxygen reduction in fuel cells. This improvement in activity...

  9. Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell / low-cost and large-area module / next-generation thin-film solar cell (Manufacture of thin-film polycrystalline solar module); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Fiscal 1997 is the first year of another 4-year-long research and development phase. In addition to researches for improving on thin-film polycrystalline Si cell efficiency that have been under way, new efforts are started, which include the development of practicality-conscious thin film producing technologies aiming at higher throughput and yield and the development of modularization process technologies which are necessary for putting thin-film cells to practical use. Concerning the formation of a power generation layer on a polycrystalline Si thin film formed by the ZMR (zone-melting recrystallization) process, studies are conducted for improvement on its throughput and yield using a new CVD (chemical vapor deposition) unit. A method of modularization is evaluated, which involves a laminate of a thin-film cell attached to a resin-coated, reinforced glass substrate and an EVA (ethylene vinyl acetate) back film. A remarkable achievement is earned toward the practicalization of technologies of thin film formation enhanced in quality and throughput and technologies of thin film modularization. (NEDO)

  10. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications)

    Science.gov (United States)

    Vedam, K.; Das, M. B.; Krishnaswamy, S. V.

    1980-02-01

    Emphasis during the third quarter of the program was on the improvement of the quality of sputtered films, their characterization and use in the fabrication of Schottky barrier type diodes and solar cell structures. Films prepared under different conditions and on different substrates were examined showing modular growths under certain conditions. I-V, C-V, and photovoltaic characteristics were measured on numerous samples based on n- and p-type films on Ni substrates having top metallization of either evaporated Au and Al. The n-type samples showed up to 200 mV V/sub oc/and small short-circuit currents. The characteristics observed are indicative of the presence of interfacial layer and surface states. Surface state's capacitance were measured on p-type samples metalized with Au.

  11. Indium effect on structural, optical and electrical properties of Cu2InxZn1-xSnS4 alloy thin films for solar cell

    Science.gov (United States)

    Sui, Yingrui; Wu, Yanjie; Zhang, Yu; Wang, Zhanwu; Wei, Maobin; Yao, Bin

    2017-11-01

    The Cu2InxZn1-xSnS4 (0 ≤ x ≤ 0.8) alloy thin films were synthesized on soda lime glass (SLG) substrate by a simple low-cost sol-gel method. The influence of In content on the structural, morphology, optical and electrical properties of Cu2InxZn1-xSnS4 thin films was investigated by X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscope (TEM), the scanning electron microscopy (SEM), optical absorbance and room-temperature Hall measurements. The results indicated that the crystal structure changed from tetragonal to the mixture of tetragonal and cubic, as x varied from 0 to 0.8. The tetragonal type structure of Cu2InxZn1-xSnS4 could be stabilized at x = 0.5 without cubic CuInSnS4 phase separation. Morphological analysis showed the grain size and crystallinity have been enhanced as the x value increased from 0 to 0.4. The Cu2InxZn1-xSnS4 alloy thin film at x = 0.4 showed the best p-type conduction characteristics with a hole concentration of 1.06 × 1015 cm-3 and a hall mobility of 6.65 cm2 V-1s-1. As the x increased to 0.5, the conductivity of films changed dramatically from p-to n-type. In addition, the optical band gap of Cu2InxZn1-xSnS4 alloy thin films with tetragonal kesterite could be continuously changed in range of 1.45-1.29 eV as the x value varied from 0 to 0.5. The Cu2InxZn1-xSnS4 alloy thin films should be ideal light-absorber material for achieving higher efficiency kesterite solar cells.

  12. Laser applications in thin-film photovoltaics

    Science.gov (United States)

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2010-08-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laser-based fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH4), silane radicals (SiH3, SiH2, SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.

  13. Physical vapor deposition and analysis of copper indium aluminum diselenide thin films for high band gap solar cells

    Science.gov (United States)

    Haimbodi, Moses Warotua

    CuInSe2 films and related alloys have been used to fabricate the highest efficiency thin film solar cells. Alloying CuInSe2 with CuAlSe2 provides a way to engineer the band gap of the resulting films from 1 to 2.7 eV, thereby providing a pathway for improving device performance. In this work, thin films of CuIn1-xAlxSe 2 obtained by multi-source PVD were characterized and investigated for their potential use as high band gap solar cells. The band gap of the films was varied by controlling the [Al]/[Al + In] ratio. Deposition of these films with varying [Cu]/[Al + In] ratios and thickness (1--4 mum) was carried out at substrate temperatures from 350--530°C. CuIn1-xAlxSe2 based solar cells have been fabricated using the structure glass/Mo/CuIn1-xAl xSe2/CdS/ZnO/grid. The effect of varying the band gap on device performance will be discussed. The highest efficiency obtained in this work is 11% using a film with Eg ≈ 1.3 eV. For high Al content, x > 0.3, device-performance decreases mainly due to poor FF similar to that observed in CuIn1-xGaxSe2 devices and is attributed to poor minority carrier collection. For CuIn1-xAlxSe2 films with x = 1, data is analyzed and presented with respect to [Cu]/[Al] and Se to total metal flux ratio, RSe/RM. Phase analysis shows that the resulting films contain different phases that depend on these parameters. Several of these films also contain concentrations of oxygen varying from 12 to 60 at. % as the [Cu]/[Al] ratio decreases. For RSe/R M > 10, a new structure we label as CuxAlySe z was observed. The oxygen content in all of the films obtained under RSe/RM > 10 vary between 1--3 at. %. Based on the Cu-Se, Al-Se, Cu-Al binary and the Cu2Se-Al2Se 3 pseudo-binary phase diagrams, a phenomenological film growth model is presented showing that the film growth kinetics are controlled by the delivery of Se.

  14. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    International Nuclear Information System (INIS)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films, including AZO/Ag/Al, AZO/Ag/nickel—chromium alloy (NiCr), and AZO/Ag/NiCr/Al, are utilized as the back reflectors of p—i—n amorphous silicon germanium thin film solar cells. NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion, which increases the short circuit current density of solar cell. NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization, the higher efficiency of solar cell is achieved. The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best. The initial conversion efficiency is achieved to be 8.05%

  15. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2003-10-01

    This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Si materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.

  16. A COMPARISON OF THE ENVIRONMENTAL IMPACT OF SOLAR POWER GENERATION USING MULTICRYSTALLINE SILICON AND THIN FILM OF AMORPHOUS SILICON SOLAR CELLS: CASE STUDY IN THAILAND

    Directory of Open Access Journals (Sweden)

    Wasin Khaenson

    2017-07-01

    Full Text Available This paper studies the environmental impact of two different forms of solar power generation in Thailand - that of multicrystalline silicon solar cells, and that of thin film amorphous silicon solar cells. It takes as its study two of the largest solar cell power plants of their kind in Thailand; a multicrystalline silicon plant in the north (generating 90 MW and a thin film amorphous silicon plant in the centre (generating 55 MW. The Life Cycle Assessment tool (LCA was used to assess the environmental impact of each stage of the process, from the manufacture of the cells, through to their transportation, installation and eventual recycling. The functional unit of the study was the generation of 1 kWh of power transmitted and distributed by the Electricity Generating Authority of Thailand (EGAT and Provincial Electricity Authority (PEA. The environmental impact results were calculated in terms of eco-points (Pt per functional unit of 1 kWh. The characterised data for 1 kWh of solar power generation was then compared with data for 1 kWh of combined cycle and thermal power generation (both in Thailand, using the same set of characterisation factors. After analyzing the results, both forms of solar power energy generation were found to impact upon the studied categories of Human Health, Ecosystem Quality and Resource Depletion, whilst also highlighting the importance of the solar cell module recycling process in decreasing the overall environmental impact. When the two solar cell technologies were compared, the overall impact of the multicrystalline silicon solar cell was found to be higher than that of the thin film amorphous silicon solar cell. Furthermore, when assessing the overall impact against non-renewable power generating technologies such as combined cycle and thermal power generation, the thin film amorphous silicon solar cells were found to have the lowest environmental impact of all technologies studied.

  17. Surface treatments and properties of CuGaSe{sub 2} thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nishiwaki, S.; Ennaoui, A.; Schuler, S.; Siebentritt, S.; Lux-Steiner, M.Ch

    2003-05-01

    Polycrystalline CuGaSe{sub 2} (CGS) films with slightly Ga-rich composition were prepared on Mo/soda-lime substrates by the 'bi-layer' process. The film surfaces were modified by chemical bath treatment with In{sub 2}(SO{sub 4}){sub 3}, thioacetamid, and triethanolamin to improve the performance in solar cell applications. The film compositions were characterized by X-ray fluorescence and the surface of treated films was investigated by X-ray photoelectron spectroscopy (XPS). Solar cells with ZnO/CdS/CGS/Mo/soda-lime glass structure were fabricated, and the current-voltage properties and the quantum efficiency were analyzed. Improvement of the spectral response, especially in the long wavelength region, was observed for the samples treated with the chemical bath, which results in increase in a short circuit current density. An increase in the parallel and series resistance of the cells was also observed with the treatment. The surface compositions of the CGS thin films modified by the chemical bath are discussed on the base of the results of XPS.

  18. Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

    International Nuclear Information System (INIS)

    Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W.; Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.

    2009-01-01

    Thin-film solar cells based on Cu 2 ZnSnS 4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H 2 S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm 2 ) efficiency of 3.4% is achieved (V oc = 563 mV, j sc = 14.8 mA/cm 2 , FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 μm. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu 2 SnS 3 , close to the interface Mo/CZTS

  19. Optical simulations of advanced light management for liquid-phase crystallized silicon thin-film solar cells

    Science.gov (United States)

    Jäger, Klaus; Köppel, Grit; Eisenhauer, David; Chen, Duote; Hammerschmidt, Martin; Burger, Sven; Becker, Christiane

    2017-08-01

    Light management is a key issue for highly efficient liquid-phase crystallized silicon (LPC-Si) thin-film solar cells and can be achieved with periodic nanotextures. They are fabricated with nanoimprint lithography and situated between the glass superstrate and the silicon absorber. To combine excellent optical performance and LPC-Si material quality leading to open circuit voltages exceeding 640 mV, the nanotextures must be smooth. Optical simulations of these solar cells can be performed with the finite element method (FEM). Accurately simulating the optics of such layer stacks requires not only to consider the nanotextured glass-silicon interface, but also to adequately account for the air-glass interface on top of this stack. When using rigorous Maxwell solvers like the finite element method (FEM), the air-glass interface has to be taken into account a posteriori, because the solar cells are prepared on thick glass superstrates, in which light is to be treated incoherently. In this contribution we discuss two different incoherent a posteriori corrections, which we test for nanotextures between glass and silicon. A comparison with experimental data reveals that a first-order correction can predict the measured reflectivity of the samples much better than an often-applied zeroth-order correction.

  20. Thin-film photovoltaic cells: long-term metal(loid) leaching at their end-of-life.

    Science.gov (United States)

    Zimmermann, Yannick-Serge; Schäffer, Andreas; Corvini, Philippe F-X; Lenz, Markus

    2013-11-19

    The photovoltaic effect of thin-film copper indium gallium selenide cells (CIGS) is conferred by the latter elements. Organic photovoltaic cells (OPV), relying on organic light-absorbing molecules, also contain a variety of metals (e.g., Zn, Al, In, Sn, Ag). The environmental impact of such technologies is largely unknown, in particular when the physical integrity deteriorates upon end-of-life, possibly facilitating cell constituent leaching. This study analyzed long-term inorganic leaching from damaged OPV and CIGS into different model waters. Leachate concentrations were put into perspective by calculating the predicted environmental concentrations (PEC) for several scenarios. Roof-top acidic rain runoff from CIGS was found to be the predominant emission source for metals and metalloids, with Cd released to such extents that PEC (173.4 μg Cd L(-1)) would considerably exceed acute toxicity concentrations for Daphnia magna . Other PEC for CIGS (9.9 mg Mo L(-1) and 9.4 μg Se L(-1)) were in the range of teratogenic effects. In contrast, OPV released little metals with calculated PEC being below even conservative drinking water guidelines. Time-resolved single-particle ICP-MS indicated that some metals (Zn, Mo, Ag) were in nanoparticulate form, raising nanotoxicity concerns. Leaching kinetics called for revision of existing standardized (accelerated) leaching protocols because long-term release was most relevant.

  1. Broadband grating couplers for efficient thin film solar cells. Final report; Breitband-Gitterkoppler fuer effiziente Duennschichtsolarzellen. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Stutzmann, M.; Nebel, C.E.; Eisele, C.; Klein, S.; Carius, R.; Finger, F.; Schubert, M.

    2002-08-01

    Efficient thin film solar cells usually require a dedicated light trapping strategy in order to achieve an optimum absorption of the solar spectrum. At present, mainly statistically textured transparent conducting electrodes are used for this purpose (TCO layers, e.g. ZnO). One aim of this project was the preparation and characterization of microstructured periodic grating couplers for the efficient trapping of weakly absorbed light in silicon thin film cells. In addition, a preliminary investigation concerning the feasibility of thin SiGe-alloy films on glass as an alternative absorber layer for tandem solar cells was to be performed. Periodically structured TCO electrodes were prepared by holographic laser patterning. These electrode layers are transparent up to the UV spectral range and can be easily structured into sub-micron gratings using HCl etching. In cooperation with the Institute for Photovoltaics (IPV), the resulting light trapping structures were overgrown by amorphous silicon solar cells using PECVD. The electrical and optical properties of these solar cells with integrated grating couplers were investigated in a systematic way, with special emphasis on the possible enhancement of the internal electric field caused by the microstructure. In addition, the growth of amorphous and microcrystalline silicon solar cell structures by hot wire CVD on both, structured as well as unstructured substrates was studied at the IPV. A second part of the project was concerned with the deposition of ultrapure amorphous Si, SiGe, and Ge films on glass by evaporation in an ultra high vacuum, followed by laser recrystallization and hydrogen passivation. For this purpose, a dedicated UHV deposition system was built. The deposited films were recrystallized with a variety of different laser techniques in order to achieve a first optimization of crystallite sizes and electronic properties. Main results of the project: (i) Grating couplers indeed can provide an efficient and

  2. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  3. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  4. Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Jung-Sheng Huang

    2014-01-01

    Full Text Available Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%. These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

  5. Grazing incidence X-ray fluorescence analysis of buried interfaces in periodically structured crystalline silicon thin-film solar cells

    International Nuclear Information System (INIS)

    Eisenhauer, David; Preidel, Veit; Becker, Christiane; Pollakowski, Beatrix; Beckhoff, Burkhard; Baumann, Jonas; Kanngiesser, Birgit; Amkreutz, Daniel; Rech, Bernd; Back, Franziska; Rudigier-Voigt, Eveline

    2015-01-01

    We present grazing incidence X-ray fluorescence (GIXRF) experiments on 3D periodically textured interfaces of liquid phase crystallized silicon thin-film solar cells on glass. The influence of functional layers (SiO x or SiO x /SiC x ) - placed between glass substrate and silicon during crystallization - on the final carbon and oxygen contaminations inside the silicon was analyzed. Baring of the buried structured silicon surface prior to GIXRF measurement was achieved by removal of the original nano-imprinted glass substrate by wet-chemical etching. A broad angle of incidence distribution was determined for the X-ray radiation impinging on this textured surface. Optical simulations were performed in order to estimate the incident radiation intensity on the structured surface profile considering total reflection and attenuation effects. The results indicate a much lower contamination level for SiO x compared to the SiO x /SiC x interlayers, and about 25% increased contamination when comparing structured with planar silicon layers, both correlating with the corresponding solar cell performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

    Science.gov (United States)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-26

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm(2), which is 48.76% higher than that of flat system.

  7. Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

    Directory of Open Access Journals (Sweden)

    Mason L. Terry

    2007-01-01

    Full Text Available The changes in open-circuit voltage (Voc, short-circuit current density (Jsc, and internal quantum efficiency (IQE of aLuminum induced crystallization, ion-assisted deposition (ALICIA polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.

  8. Analysis of impact of non-uniformities on thin-film solar cells and modules with two-dimesional simulations

    Science.gov (United States)

    Koishiyev, Galymzhan T.

    Clean and environmentally friendly photovoltaic (PV) technologies are now generally recognized as an alternative solution to many global-scale problems such as energy demand, pollution, and environment safety. The cost ($/kWh) is the primary challenge for all PV technologies. In that respect, thin-film polycrystalline PV technology (CdTe, Cu(In,Ga)Se2, etc), due to its fast production line, large area panels and low material usage, is one of the most promising low-cost technologies. Due to their granular structure, thin-film solar cells are inherently non-uniform. Also, inevitable fluctuations during the multistep deposition process of large area thin-film solar panels and specific manufacturing procedures such as scribing result in non-uniformities. Furthermore, non-uniformities can occur, become more severe, or increase in size during the solar-panel's life cycle due to various environmental conditions (i.e. temperature variation, shading, hail impact, etc). Non-uniformities generally reduce the overall efficiency of solar cells and modules, and their effects therefore need to be well understood. This thesis focuses on the analysis of the effect of non-uniformities on small size solar cells and modules with the help of numerical simulations. Even though the 2-D model developed here can analyze the effect of non-uniformities of any nature, only two specific types of microscopic non-uniformities were addressed here: shunts and weak-diodes. One type of macroscopic non-uniformity, partial shading, was also addressed. The circuit model developed here is a network of diodes, current-sources, and transparent-conductive-oxide (TCO) resistors. An analytic relation between the TCO-resistor, which is the primary model parameter, and TCO sheet resistance rhoS, which is the corresponding physical parameter, was derived. Based on the model several useful general results regarding a uniform cell were deduced. In particular, a global parameter delta, which determines the

  9. Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

    Science.gov (United States)

    Das, Debajyoti; Kar, Debjit

    2017-12-01

    A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.

  10. Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyan, Rajesh [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); Oulad Elhmaidi, Zakaria [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); Sekkat, Zouheir [Optics & Photonics Center, Moroccan Foundation for Advanced Science, Innovation and Research, Rabat (Morocco); Abd-lefdil, Mohammed [University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); El Khakani, My Ali, E-mail: elkhakani@emt.inrs.ca [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada)

    2017-02-28

    Highlights: • High quality CZTS thin films grown by means of PLD technique without resorting to any post sulfurization process. • Effect of thermal annealing treatments (in the 200–500 °C range) on the structural, morphological and optoelectronic properties of PLD-CZTS films. • Experimental determination of key optoelectronic parameters (i.e.; E{sub g}, VBM, ϕ, I{sub p}, and χ) enabling the reconstruction of energy band electronic structure of the PLD-CZTS films. • Investigation on the energy band alignments of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials. - Abstract: We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (T{sub a}), but their crystallinity is much improved for T{sub a} ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with T{sub a} (from ∼14 nm at RT to 70 nm at T{sub a} = 500 °C with a value around 40 nm for T{sub a} = 300–400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV–vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at T{sub a} = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS

  11. Q-switched all-solid-state lasers and application in processing of thin-film solar cell

    Science.gov (United States)

    Liu, Liangqing; Wang, Feng

    2009-08-01

    Societal pressure to renewable clean energy is increasing which is expected to be used as part of an overall strategy to address global warming and oil crisis. Photovoltaic energy conversion devices are on a rapidly accelerating growth path driven by government, of which the costs and prices lower continuously. The next generation thin-film devices are considered to be more efficiency and greatly reduced silicon consumption, resulting in dramatically lower per unit fabrication costs. A key aspect of these devices is patterning large panels to create a monolithic array of series-interconnected cells to form a low current, high voltage module. This patterning is accomplished in three critical scribing processes called P1, P2, and P3. All-solid-state Q-switched lasers are the technology of choice for these processes, due to their advantages of compact configuration, high peak-value power, high repeat rate, excellent beam quality and stability, delivering the desired combination of high throughput and narrow, clean scribes. The end pumped all-solid-state lasers could achieve 1064nm IR resources with pulse width of nanoseconds adopting acoustic-optics Q-switch, shorter than 20ns. The repeat rate is up to 100kHz and the beam quality is close to diffraction limit. Based on this, 532nm green lasers, 355nm UV lasers and 266nm DUV lasers could be carried out through nonlinear frequency conversion. Different wave length lasers are chose to process selective materials. For example, 8-15 W IR lasers are used to scribe the TCO film (P1); 1-5 W green lasers are suitable for scribing the active semiconductor layers (P2) and the back contact layers (P3). Our company, Wuhan Lingyun Photo-electronic System Co. Ltd, has developed 20W IR and 5W green end-pumped Q-switched all-solid-state lasers for thin-film solar industry. Operating in high repeat rates, the speed of processing is up to 2.0 m/s.

  12. Prospects of novel front and back contacts for high efficiency cadmium telluride thin film solar cells from numerical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Matin, M.A. [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Department of Electrical and Electronics Engineering, Chittagong University of Engineering and Technology (CUET), Chittagong (Bangladesh); Mannir Aliyu, M.; Quadery, Abrar H. [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Amin, Nowshad [Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Center of Excellence for Research in Engineering Materials (CEREM), College of Engineering, King Saud University, Riyadh 11421 (Saudi Arabia)

    2010-09-15

    Cadmium telluride (CdTe) thin film solar cell has long been recognized as a leading photovoltaic candidate for its high efficiency and low cost. A numerical simulation has been performed using AMPS-1D simulator to explore the possibility of higher efficiency and stable CdS/CdTe cell among several cell structures with indium tin oxide (ITO) and cadmium stannate (Cd{sub 2}SnO{sub 4}) as front contact material, tin oxide (SnO{sub 2}), zinc oxide (ZnO) and zinc stannate (Zn{sub 2}SnO{sub 4}) as buffer layer, and silver (Ag) or antimony telluride (Sb{sub 2}Te{sub 3}) with molybdenum (Mo) or zinc telluride (ZnTe) with aluminium (Al) as back contact material. The cell structure ITO/i-ZnO/CdS/CdS{sub x}Te{sub 1-x}/CdTe/Ag has shown the best conversion efficiency of 16.9% (Voc=0.9 V, Jsc=26.35 mA/cm{sup 2}, FF=0.783). This analysis has shown that ITO as front contact material, ZnO as buffer layer and ZnTe or Sb{sub 2}Te{sub 3} back surface reflector (BSR) are suitable material system for high efficiency (>15%) and stable CdS/CdTe cells. The cell normalized efficiency linearly decreased at a temperature gradient of -0.25%/ C for ZnTe based cells, and at -0.40%/ C for other cells. (author)

  13. Strategies to prepare TiO2 thin films, doped with transition metal ions, that exhibit specific physicochemical properties to support osteoblast cell adhesion and proliferation

    International Nuclear Information System (INIS)

    Dhayal, Marshal; Kapoor, Renu; Sistla, Pavana Goury; Pandey, Ravi Ranjan; Kar, Satabisha; Saini, Krishan Kumar; Pande, Gopal

    2014-01-01

    Metal ion doped titanium oxide (TiO 2 ) thin films, as bioactive coatings on metal or other implantable materials, can be used as surfaces for studying the cell biological properties of osteogenic and other cell types. Bulk crystallite phase distribution and surface carbon–oxygen constitution of thin films, play an important role in determining the biological responses of cells that come in their contact. Here we present a strategy to control the polarity of atomic interactions between the dopant metal and TiO 2 molecules and obtain surfaces with smaller crystallite phases and optimal surface carbon–oxygen composition to support the maximum proliferation and adhesion of osteoblast cells. Our results suggest that surfaces, in which atomic interactions between the dopant metals and TiO 2 were less polar, could support better adhesion, spreading and proliferation of cells. - Highlights: • Electrochemical properties of dopants control the nature of TiO 2 thin films. • A model explains the correlation of dopant properties and behaviour of TiO 2 films. • Dopants with less polar interaction with TiO 2 exhibit better biological activity

  14. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration

    Science.gov (United States)

    Huang, Zhiquan

    Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a

  15. Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Vashistha, Indu B., E-mail: indu-139@yahoo.com; Sharma, S. K. [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Sharma, Mahesh C. [National Institute of Solar Energy, Gurgaon (India); Sharma, Ramphal [Thin Film and Nanotechnology Lab, Department of Physics Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 43100 (India)

    2015-08-28

    In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.

  16. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  17. Plasmon generation in sputtered Ga-doped MgZnO thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Awasthi, Vishnu; Garg, Vivek; Sengar, Brajendra S.; Sharma, Pankaj; Mukherjee, Shaibal, E-mail: shaibal@iiti.ac.in [Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology, Indore 453552 (India); Pandey, Sushil Kumar [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Kumar, Shailendra [Indus Synchrotron Utilization Division, Raja Ramanna Center for Advanced Technology, Indore 452013 (India); Mukherjee, C. [Laser System Engineering Division, Raja Ramanna Center for Advanced Technology, Indore 452013 (India)

    2016-06-21

    The crystalline, electrical, morphological, optical properties and plasmonic behaviour of Ga doped MgZnO (GMZO) thin films grown at different substrate temperatures (200–600 °C) by a dual ion beam sputtering (DIBS) system are investigated. Transmittance value of more than ∼94% in 400–1000 nm region is observed for all GMZO films. The particle plasmon features can be detected in the absorption coefficient spectra of GMZO grown at 500 and 600 °C in the form of a peak at ∼4.37 eV, which corresponds to a plasmon resonance peak of nanoclusters formed in GMZO. The presence of such plasmonic features is confirmed by ultraviolet photoelectron spectroscopy measurements. The values of particle plasmon resonance energy of various nanoclusters are in the range of solar spectrum, and these can easily be tuned and excited at the desirable wavelengths while optimizing the efficiency of solar cells (SCs) by simple alteration of DIBS growth temperature. These nanoclusters are extremely promising to enhance the optical scattering and trapping of the incident light, which increases the optical path length in the absorber layer of cost-effective SCs and eventually increases its efficiency.

  18. Synthesis and Characterization of Molybdenum Back Contact Using Direct Current-Magnetron Sputtering for Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Subhash M. Pandharkar

    2018-03-01

    Full Text Available In present work, we report synthesis of molybdenum (Mo thin films by direct current (DC-magnetron sputtering method. The structural, optical, morphological, and electrical properties were investigated as a function of target-to-substrate distance. From the results, it is evident that with increase in target-to-substrate distance the thickness of films decreases while its sheet resistance and electrical resistivity increases, which is confirmed by van der Pauw method. Low angle XRD analysis revealed that with increase in target-to-substrate distance preferred orientation of Mo crystallites changes from (211 to (110 and its size decreases. The field emission scanning electron microscope (FE-SEM analysis revealed a significant change in surface morphology with increase in target-to-substrate distance. UV-Visible spectroscopy analysis showed that Mo films deposited at higher target-to-substrate distance have more reflection than those deposited at lower target-to-substrate. Finally, adhesion test was performed using scotch hatch tape adhesion test which show all Mo films have excellent adhesion over the entire range of target-to-substrate distance studied. The employment of such Mo films as back contact can be useful to improve efficiency of CZTS solar cells.

  19. High Efficiency MAPbI3 Perovskite Solar Cell Using a Pure Thin Film of Polyoxometalate as Scaffold Layer.

    Science.gov (United States)

    Sardashti, Mohammad Khaledi; Zendehdel, Mahmoud; Nia, Narges Yaghoobi; Karimian, Davud; Sheikhi, Mohammad

    2017-10-09

    Here, we successfully used a pure layer of [SiW 11 O 39 ] 8- polyoxomethalate (POM) structure as a thin-film scaffold layer for CH 3 NH 3 PbI 3 -based perovskite solar cells (PSCs). A smooth nanoporous surface of POM causes outstanding improvement of the photocurrent density, external quantum efficiency (EQE), and overall efficiency of the PSCs compared to mesoporous TiO 2 (mp-TiO 2 ) as scaffold layer. Average power conversion efficiency (PCE) values of 15.5 % with the champion device showing 16.3 % could be achieved by using POM and a sequential deposition method with the perovskite layer. Furthermore, modified and defect-free POM/perovskite interface led to elimination of the anomalous hysteresis in the current-voltage curves. The open-circuit voltage decay study shows promising decrease of the electron recombination in the POM-based PSCs, which is also related to the modification of the POM/ perovskite interface and higher electron transport inside the POM layer. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Phase modification and morphological evolution in Nb2O5 thin films and its influence in dye- sensitized solar cells

    Science.gov (United States)

    Suresh, S.; Unni, Gautam E.; Ni, Chensheng; Sreedharan, R. Sreeja; Krishnan, R. Reshmi; Satyanarayana, M.; Shanmugam, Mariyappan; Pillai, V. P. Mahadevan

    2017-10-01

    Thermal energy plays a crucial role on the phase evolution of niobium oxide (Nb2O5) thin films and when employed as a blocking layer these films can manoeuvre charge transfer process in a dye sensitized solar cell (DSSC). Niobium oxide film, prepared by RF magnetron sputtering process, endured phase transitions successively from amorphous to orthorhombic and finally to monoclinic phases when subjected to post-deposition annealing. The co-existence of orthorhombic and monoclinic phases with an interesting surface morphology is perceived at an annealing temperature of 900 °C. Nb2O5 blocking layer at the FTO/TiO2 interface strongly influenced the photovoltaic parameters of the DSSC and the blocking layer in the orthorhombic phase is found to be most effective in suppressing charge recombination and delivered a maximum efficiency of 7.33%. The improvement in open circuit voltage can be foreseeable as shifting of the Fermi level towards the conduction band edge of the TiO2 as a result of structural modification of the Nb2O5 blocking layer. The thermal stability of the FTO is also investigated and found that the electrical and optical properties of FTO were remarkably stable up to 600 °C and begin to change appreciably from 700 °C onwards.

  1. Rapid thermal annealing of sputter-deposited ZnO:Al films for microcrystalline Si thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Hanajiri T.

    2012-06-01

    Full Text Available Rapid thermal annealing of sputter-deposited ZnO and Al-doped ZnO (AZO films with and without an amorphous silicon (a-Si capping layer was investigated using a radio-frequency (rf argon thermal plasma jet of argon at atmospheric pressure. The resistivity of bare ZnO films on glass decreased from 108 to 104–105 Ω cm at maximum surface temperatures Tmaxs above 650 °C, whereas the resistivity increased from 10-4 to 10-3–10-2Ω cm for bare AZO films. On the other hand, the resistivity of AZO films with a 30-nm-thick a-Si capping layer remained below 10-4Ω cm, even after TPJ annealing at a Tmax of 825 °C. The film crystallization of both AZO and a-Si layers was promoted without the formation of an intermixing layer. Additionally, the crystallization of phosphorous- and boron-doped a-Si layers at the sample surface was promoted, compared to that of intrinsic a-Si under the identical plasma annealing conditions. The TPJ annealing of n+-a-Si/textured AZO was applied for single junction n-i-p microcrystalline Si thin-film solar cells.

  2. Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2 thin-film solar cells

    Science.gov (United States)

    Vilalta-Clemente, Arantxa; Raghuwanshi, Mohit; Duguay, Sébastien; Castro, Celia; Cadel, Emmanuel; Pareige, Philippe; Jackson, Philip; Wuerz, Roland; Hariskos, Dimitrios; Witte, Wolfram

    2018-03-01

    The introduction of a rubidium fluoride post deposition treatment (RbF-PDT) for Cu(In,Ga)Se2 (CIGS) absorber layers has led to a record efficiency up to 22.6% for thin-film solar cell technology. In the present work, high efficiency CIGS samples with RbF-PDT have been investigated by atom probe tomography (APT) to reveal the atomic distribution of all alkali elements present in CIGS layers and compared with non-treated samples. A Scanning Electron Microscopy Dual beam station (Focused Ion Beam-Gas Injection System) as well as Transmission Kikuchi diffraction is used for atom probe sample preparation and localization of the grain boundaries (GBs) in the area of interest. The analysis of the 3D atomic scale APT reconstructions of CIGS samples with RbF-PDT shows that inside grains, Rb is under the detection limit, but the Na concentration is enhanced as compared to the reference sample without Rb. At the GBs, a high concentration of Rb reaching 1.5 at. % was found, and Na and K (diffusing from the glass substrate) are also segregated at GBs but at lower concentrations as compared to Rb. The intentional introduction of Rb leads to significant changes in the chemical composition of CIGS matrix and at GBs, which might contribute to improve device efficiency.

  3. Cocktails of paste coatings for performance enhancement of CuInGaS(2) thin-film solar cells.

    Science.gov (United States)

    An, Hee Sang; Cho, Yunae; Park, Se Jin; Jeon, Hyo Sang; Hwang, Yun Jeong; Kim, Dong-Wook; Min, Byoung Koun

    2014-01-22

    To fabricate low-cost and printable wide-bandgap CuInxGa1-xS2 (CIGS) thin-film solar cells, a method based on a precursor solution was developed. In particular, under this method, multiple coatings with two pastes with different properties (e.g., viscosity) because of the different binder materials added were applied. Paste A could form a thin, dense layer enabling a high-efficiency solar cell but required several coating and drying cycles for the desired film thickness. On the other hand, paste B could easily form one-micrometer-thick films by means of a one-time spin-coating process but the porous microstructure limited the solar cell performance. Three different configurations of the CIGS films (A + B, B + A, and A + B + A) were realized by multiple coatings with the two pastes to find the optimal stacking configuration for a combination of the advantages of each paste. Solar cell devices using these films showed a notable difference in their photovoltaic characteristics. The bottom dense layer increased the minority carrier diffusion length and enhanced the short-circuit current. The top dense layer could suppress interface recombination but exhibited a low optical absorption, thereby decreasing the photocurrent. As a result, the A + B configuration could be suggested as a desirable simple stacking structure. The solar cell with A + B coating showed a highly improved efficiency (4.66%) compared to the cell with a film prepared by paste B only (2.90%), achieved by simple insertion of a single thin (200 nm), dense layer between the Mo back contact and a thick porous CIGS layer.

  4. Benchmarking Pt and Pt-lanthanide sputtered thin films for oxygen electroreduction

    DEFF Research Database (Denmark)

    Zamburlini, Eleonora; Jensen, Kim Degn; Stephens, Ifan E.L.

    2017-01-01

    Platinum-lanthanide alloys are very promising as active and stable catalysts for the oxygen reduction reaction (ORR) in low-temperature fuel cells. We have fabricated Pt and Pt5Gd metallic thin films via (co-)sputtering deposition in an ultra-high vacuum (UHV) chamber. The electrochemical ORR...

  5. Fully solution processed PEDOT:PSS and silver nanowire semitransparent electrodes for thin film solar cells

    Science.gov (United States)

    Vaagensmith, Bjorn

    Building integrated photovoltaics (BIPV), such as semitransparent organic solar cells (OSC) for power generating windows, is a promising method for implementing renewable energy under the looming threat of depleting fossil fuels. OSC require a solution processed transparent electrode to be cost effective; but typically employ a non-solution processed indium tin oxide (ITO) transparent electrode. PEDOT:PSS and silver nanowire transparent electrodes have emerged as a promising alternative to ITO and are solution processed compatible. However, PEDOT:PSS requires a strong acid treatment, which is incompatible with high throughput solution processed fabrication techniques. Silver nanowires suffer from a short lifetime when subject to electrical stress. The goals of this work were to fabricate a PEDOT:PSS electrodes without using strong acids, a silver nanowire electrode with a lifetime that can exceed 6000 hours of constant electrical stress, and use these two electrodes to fabricate a semitransparent OSC. Exploring optimal solvent blend additives in conjunction with solvent bend post treatments for PEDOT:PSS electrodes could provide an acid free method that results in comparable sheet resistance and transmittance of ITO electrodes. Silver nanowires fail under electrical stress due to sulfur corrosion and Joule heating (which melts and breaks apart electrical contact). A silver oxide layer coating the nanowires could hinder sulfur corrosion and help redistribute heat. Moreover, nanowires with thicker diameters could also exhibit higher heat tolerance and take longer to corrode. Four layer PEDOT:PSS electrodes with optimal solvent blend additives and post treatments were fabricated by spin coating. Silver nanowire electrodes of varying nanowire diameter with and without UV-ozone treatment were fabricated by spray coating and subject to electrical stress of 20 mA/cm2 constant current density. PEDOT:PSS electrodes exhibited a sheet resistance of 80 O/□ and average

  6. Quantum and conversion efficiencies optimization of superstrate CIGS thin-films solar cells using In2Se3 buffer layer

    Science.gov (United States)

    Bouchama, Idris; Boudour, Samah; Bouarissa, Nadir; Rouabah, Zahir

    2017-10-01

    In this present contribution, AMPS-1D device simulator is employed to study the performances of superstrate SLG/TCO/p-Cu(In,Ga)Se2(CIGS)/n-ODC/n-In2Se3/Metal thin film solar cells. The impact of the TCO and Metal work functions on the cell performance has been investigated. The combination of optical transparency and electrical property for TCO front contact layer is found to yield high efficiency. The obtained results show that the TCO work function should be large enough to achieve high conversion efficiency for superstrate CIGS solar cell. Nevertheless, it is desirable for Metal back contact layer to have low work function to prevent the effect of band bending in the n-In2Se3/Metal interface. Several TCOs materials and metals have been tested respectively as a front and back contact layers for superstrate CIGS solar cells. An efficiency of 20.18%, with Voc ≈ 0.71 V, Jsc ≈ 35.36 mA/cm2 and FF ≈ 80.42%, has been achieved with ZnSn2O3-based as TCO front contact layer. In the case of SnO2:F front contact and indium back contact layers, an efficiency of 16.31%, with Voc ≈ 0.64 V, Jsc ≈ 31.4 mA/cm2 and FF ≈ 79.4%, has been obtained. The present results of simulation suggest an improvement of superstrate CIGS solar cells efficiency for feasible fabrication.

  7. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  8. 13.7%-efficient Zn(Se,OH){sub x}/Cu(In,Ga)(S,Se){sub 2} thin-film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Ennaoui, A. [Hahn-Meitner-Institut, Bereich Physikalische Chemie, Berlin (Germany); Blieske, U.; Lux-Steiner, M.Ch. [Hahn-Meitner-Institut, Bereich Festkoerperphysik, Berlin (Germany)

    1998-12-01

    Cu(In,Ga)Se{sub 2} (CIGS) and related semiconducting compounds have demonstrated their high potential for high-efficiency thin-film solar cells. The highest efficiency for CIGS based thin-film solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as chemical based deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, Zn(Se,OH){sub x} buffer layers were deposited by CBD on polycrystalline Cu(In,Ga)(S,Se){sub 2} (CIGSS). A total-area conversion efficiency of 13.7% was certified by the Fraunhofer Institute for Solar Energy Systems. The CIGSS absorber was fabricated by Siemens Solar Industries (California). For device optimisation, the thickness and good surface coverage were controlled by XPS-UPS photoemission spectroscopy. A Zn(Se,OH){sub x} thickness below 7 nm has been found to be optimum for achieving a homogeneous and compact buffer film on CIGSS, with open-circuit photovoltage V{sub oc} = 535 mV, fill factor FF = 70.76% and a high short-circuit photocurrent density J{sub sc} 36.1 mA cm{sup -2}. (Author)

  9. Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

    Science.gov (United States)

    Kim, Jekyung; Shin, Byungha

    2017-09-01

    Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

  10. Wet-Chemical Surface Texturing of Sputter-Deposited ZnO:Al Films as Front Electrode for Thin-Film Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Xia Yan

    2015-01-01

    Full Text Available Transparent conductive oxides (TCOs play a major role as the front electrodes of thin-film silicon (Si solar cells, as they can provide optical scattering and hence improved photon absorption inside the devices. In this paper we report on the surface texturing of aluminium-doped zinc oxide (ZnO:Al or AZO films for improved light trapping in thin-film Si solar cells. The AZO films are deposited onto soda-lime glass sheets via pulsed DC magnetron sputtering. Several promising AZO texturing methods are investigated using diluted hydrochloric (HCl and hydrofluoric acid (HF, through a two-step etching process. The developed texturing procedure combines the advantages of the HCl-induced craters and the smaller and jagged—but laterally more uniform—features created by HF etching. In the two-step process, the second etching step further enhances the optical haze, while simultaneously improving the uniformity of the texture features created by the HCl etch. The resulting AZO films show large haze values of above 40%, good scattering into large angles, and a surface angle distribution that is centred at around 30°, which is known from the literature to provide efficient light trapping for thin-film Si solar cells.

  11. Sintered porous silicon. Physical properties and applications for layer-transfer silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, A.K.

    2007-07-16

    This work focusses on the characterisation of sintered porous silicon and on the development of monocrystalline silicon thin-film solar cells from the Porous Silicon Process (PSI process). For the fabrication of these solar cells, a thin silicon film is epitaxially grown on a monocrystalline silicon growth substrate, that features a layer of porous silicon (PS) at the surface. Due to the thermal activation during the epitaxial growth process, the PS layer reconfigurates and mechanically weakens, which later permits the transfer of the thin-film device to a second carrier substrate. When separating the epitaxial film from the growth substrate, a residual layer of sintered porous silicon (SPS) remains attached to the rear side of the device. So far, the physical properties of this layer and its impact on the performance of PSI solar cells have been poorly investigated. This thesis aims at a comprehensive determination of the physical properties of sintered porous silicon, in particular, its thermal, optical and electrical properties. For the thermal characterisation of the fragile free standing SPS films, a contactless measurement technique based on lock-in thermography is developed and experimentally verified. This analysis identifies a third order power law dependence of the thermal conductivity of SPS on the porosity, in agreement with the predictions of the Looyenga model. Phonon scattering at the pore walls, which is known to drastically reduce the thermal conductivity of as-prepared PS, is also present in the sintered state. The obtained results reveal that, in the case of SPS, this effect is less pronounced, due to the increased structure size of the sintered material compared to the as-prepared state. The effective refractive index of SPS complies with the predictions of effective medium models, whereas Mie's theory successfully describes light scattering by the spherical pores in SPS. An analysis of the measured scattering coefficient shows that the

  12. Characterizations of Cuprous Oxide Thin Films Prepared by Sol-Gel Spin Coating Technique with Different Additives for the Photoelectrochemical Solar Cell

    Directory of Open Access Journals (Sweden)

    D. S. C. Halin

    2014-01-01

    Full Text Available Cuprous oxide (Cu2O thin films were deposited onto indium tin oxide (ITO coated glass substrate by sol-gel spin coating technique using different additives, namely, polyethylene glycol and ethylene glycol. It was found that the organic additives added had a significant influence on the formation of Cu2O films and lead to different microstructures and optical properties. The films were characterized by X-ray diffraction (XRD, field emission scanning electron microscopy (FESEM, and ultraviolet-visible spectroscopy (UV-Vis. Based on the FESEM micrographs, the grain size of film prepared using polyethylene glycol additive has smaller grains of about 83 nm with irregular shapes. The highest optical absorbance film was obtained by the addition of polyethylene glycol. The Cu2O thin films were used as a working electrode in the application of photoelectrochemical solar cell (PESC.

  13. Synthesis and characterization of porous structured ZnO thin film for dye sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Marimuthu, T.; Anandhan, N., E-mail: anandhan-kn@rediffmail.com; Mummoorthi, M. [School of Physics, Alagappa University, Karaikudi – 630 003 (India); Dharuman, V. [Department of Bioelectronics and Biosensors, Alagappa University, Karaikudi – 630 003 (India)

    2016-05-23

    Zinc oxide (ZnO) and zinc oxide/eosin yellow (ZnO/EY) thin films were potentiostatically deposited onto fluorine doped tin oxide (FTO) glass substrate. Effect of eosin yellow dye on structural, morphological and optical properties was studied. X-ray diffraction patterns, micro Raman spectra and photoluminescence (PL) spectra reveal hexagonal wurtzite structure with less atomic defects in 101 plane orientation of the ZnO/EY film. Scanning electron microscopy (SEM) images show flower for ZnO and porous like structure for ZnO/EY thin film, respectively. DSSC was constructed and evaluated by measuring the current density verses voltage curve.

  14. Electron spin resonance investigaton of semiconductor materials for application in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Lihong

    2012-07-01

    to slight n-type character of undoped a-Si:H and {mu}c-Si:H. Therefore ESR evaluation leads to an underestimation of N{sub D} in the annealed states of highly crystalline {mu}c-Si:H. It has been concluded that N{sub S} in the exposed states represents N{sub D} more adequately than in the annealed states. 2. As the transparent conductive window layer, nominally undoped and Al-doped {mu}c-SiC:H thin films were prepared by hot-wire chemical vapor deposition (HWCVD). Samples with a wide range of crystallinity from highly crystalline (I{sup IR}{sub C} > 90%) to amorphous (I{sup IR}{sub C} = 0%) have been prepared with variation of the Monomethylsilane concentration (c{sub MMS}), the substrate and filament temperature (T{sub S}, T{sub F}), the gas pressure (p) and the Al-doping concentration (p{sub TMAl}/p{sub MMS}). In the nominally undoped {mu}c-SiC:H material, a high N{sub S} is observed over a wide range of crystallinity, whereas {sigma}{sub D} increases by 10 orders of magnitude up to 10{sup -2} S/cm as the material becomes more crystalline. The dramatic increase of {sigma}{sub D} has been attributed to both the higher material crystallinity and unintentional donor doping. The ESR spectrum changes from a broad featureless resonance in the low crystallinity material to a sharp line with a pair of distinct satellites in highly crystalline n-type {mu}c-SiC:H. The resonance center is constant at g = 2.003. The central resonance is associated with the paramagnetic states of Si- and/or C-vacancies (V{sub Si}, V{sub C}) at different charge states and dangling bonds (dbs) in disordered phases, and the observed hyperfine structure is speculated to be related to the unintentionally doped nitrogen. Al-doping leads to a compensation of donors. {sigma}{sub D} firstly dropped to the minimum of 10{sup -11} S/cm before increasing up to 4 x 10{sup -4} S/cm, while N{sub S} decreased to 5 x 10{sup 17} cm{sup -3} and then increased up to 2 x 10{sup 19} cm{sup -3}. Meanwhile, Al

  15. Spray pyrolysed Cu2ZnSnS4/In2S3 thin film solar cell: Effect of varying copper concentration on cell parameters

    Science.gov (United States)

    Menon, M. R. Rajesh; Rajeshmon, V. G.; Thomas, Titu; Kartha, C. Sudha; Vijayakumar, K. P.

    2016-05-01

    A double layer Cu2ZnSnS4 absorber was employed for the first time to improve the performance of spray pyrolysed Cu2ZnSnS4/In2S3 thin film solar cell. Copper concentration in the two layers of Cu2ZnSnS4 was adjusted and effect on performance parameters was studied. It was observed that higher copper concentration in the absorber layer adjacent to the electrode is beneficial for device performance, whereas, lower copper concentration in absorber layer near to the junction has detrimental effect on the device properties.

  16. Development of SnS (FTO/CdS/SnS) thin films by nebulizer spray pyrolysis (NSP) for solar cell applications

    Science.gov (United States)

    Arulanantham, A. M. S.; Valanarasu, S.; Jeyadheepan, K.; Ganesh, V.; Shkir, Mohd

    2018-01-01

    Herein we report a well-organized analysis on various key-properties of SnS thin films for solar cell fabricated by nebulizer spray pyrolysis technique. X-ray diffraction study reveals the polycrystalline nature of deposited films with orthorhombic crystal structure. The crystallite size was calculated and observed to be in the range of 8-28 nm with increasing molarity of precursor solution. The stoichiometry composition of SnS was confirmed by EDX study. SEM/AFM studies divulge the well-covered deposited surface with spherical grains and the size of grains is increasing with concentration and so the roughness. A remarkable decrease in band gap from 2.6 eV to 1.6 eV was noticed by raising the molar concentration from 0.025 M up to 0.075 M. A single strong emission peak at about 825 nm is observed in PL spectra with enhanced intensity which may be attributed to near band edge emission. From the Hall effect measurement, it was found that the SnS thin film exhibits p-type conductivity. The calculated values of resistivity and carrier concentration are 0.729 Ω cm and 3.67 × 1018/cm3 respectively. Furthermore, to study the photovoltaic properties of SnS thin films a heterojunction solar cell, FTO/n-CdS/p-SnS was produced and the conversion efficiency was recorded about 0.01%.

  17. Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

    Directory of Open Access Journals (Sweden)

    Mi-jin Jin

    2013-10-01

    Full Text Available We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD. The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002 direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications.

  18. Investigation of Cu2SnSe3 preparation by simultaneous electrodeposition as precursor of Cu2ZnSnSe4 thin film solar cell

    Science.gov (United States)

    Gunawan, Haris, Abdul; Widodo, Didik Setiyo; Septina, Wilman; Ikeda, Shigeru

    2017-08-01

    Chalcogenide material of multinary metals are of interest in relation as optoelectronic devices such as laser and solar cell. Cu2SnSe3, ternary chalcogenide, is semiconductor with low bandgap. Beside that Cu2SnSe3 is important precursor for the growth of a promising Cu2ZnSnSe4 thin film solar cell since it contains elements that is abundance in the earth crust. The aim of this work is to synthesis Cu2SnSe3 thin film compound by using simultaneous electrodeposition. The product then was characterized using EDX, XRD, RAMAN and SEM. The result showed that Cu2SnSe3 can be prepared by electrodeposition at a potential of -0.6V vs. Ag/AgCl for 20 min. Annnealing can cause the increase of Cu2SnSe3 sample crystalinity. Annealing in argon atmosphere at 500 °C affected selenium evaporation in the film, therefore it improved Cu/Sn ratio. Further, annealing in selenium atmosphere at temperature of 500 °C can increase the intensity of Cu2SnSe3 crystal much better and also improve the Se/(Cu+Sn) ratio close to ideal value. Spectra of XRD and raman also proved the presence of Cu2SnSe3 in the prepared thin film.

  19. Smooth anti-reflective three-dimensional textures for liquid phase crystallized silicon thin-film solar cells on glass.

    Science.gov (United States)

    Eisenhauer, David; Köppel, Grit; Jäger, Klaus; Chen, Duote; Shargaieva, Oleksandra; Sonntag, Paul; Amkreutz, Daniel; Rech, Bernd; Becker, Christiane

    2017-06-01

    Recently, liquid phase crystallization of thin silicon films has emerged as a candidate for thin-film photovoltaics. On 10 μm thin absorbers, wafer-equivalent morphologies and open-circuit voltages were reached, leading to 13.2% record efficiency. However, short-circuit current densities are still limited, mainly due to optical losses at the glass-silicon interface. While nano-structures at this interface have been shown to efficiently reduce reflection, up to now these textures caused a deterioration of electronic silicon material quality. Therefore, optical gains were mitigated due to recombination losses. Here, the SMooth Anti-Reflective Three-dimensional (SMART) texture is introduced to overcome this trade-off. By smoothing nanoimprinted SiO x nano-pillar arrays with spin-coated TiO x layers, light in-coupling into laser-crystallized silicon solar cells is significantly improved as successfully demonstrated in three-dimensional simulations and in experiment. At the same time, electronic silicon material quality is equivalent to that of planar references, allowing to reach V oc values above 630 mV. Furthermore, the short-circuit current density could be increased from 21.0 mA cm -2 for planar reference cells to 24.5 mA cm -2 on SMART textures, a relative increase of 18%. External quantum efficiency measurements yield an increase for wavelengths up to 700 nm compared to a state-of-the-art solar cell with 11.9% efficiency, corresponding to a j sc, EQE gain of 2.8 mA cm -2 .

  20. Determination of Charge-Carrier Mobility in Disordered Thin-Film Solar Cells as a Function of Current Density

    Science.gov (United States)

    Mäckel, Helmut; MacKenzie, Roderick C. I.

    2018-03-01

    Charge-carrier mobility is a fundamental material parameter, which plays an important role in determining solar-cell efficiency. The higher the mobility, the less time a charge carrier will spend in a device and the less likely it is that it will be lost to recombination. Despite the importance of this physical property, it is notoriously difficult to measure accurately in disordered thin-film solar cells under operating conditions. We, therefore, investigate a method previously proposed in the literature for the determination of mobility as a function of current density. The method is based on a simple analytical model that relates the mobility to carrier density and transport resistance. By revising the theoretical background of the method, we clearly demonstrate what type of mobility can be extracted (constant mobility or effective mobility of electrons and holes). We generalize the method to any combination of measurements that is able to determine the mean electron and hole carrier density, and the transport resistance at a given current density. We explore the robustness of the method by simulating typical organic solar-cell structures with a variety of physical properties, including unbalanced mobilities, unbalanced carrier densities, and for high or low carrier trapping rates. The simulations reveal that near VOC and JSC , the method fails due to the limitation of determining the transport resistance. However, away from these regions (and, importantly, around the maximum power point), the method can accurately determine charge-carrier mobility. In the presence of strong carrier trapping, the method overestimates the effective mobility due to an underestimation of the carrier density.

  1. Wafer-Scale Integration of Inverted Nanopyramid Arrays for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells.

    Science.gov (United States)

    Zhou, Suqiong; Yang, Zhenhai; Gao, Pingqi; Li, Xiaofeng; Yang, Xi; Wang, Dan; He, Jian; Ying, Zhiqin; Ye, Jichun

    2016-12-01

    Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive material. Here, we report an efficient light-trapping strategy in c-Si TFs (~20 μm in thickness) that utilizes two-dimensional (2D) arrays of inverted nanopyramid (INP) as surface texturing. Three types of INP arrays with typical periodicities of 300, 670, and 1400 nm, either on front, rear, or both surfaces of the c-Si TFs, are fabricated by scalable colloidal lithography and anisotropic wet etch technique. With the extra aid of antireflection coating, the sufficient optical absorption of 20-μm-thick c-Si with a double-sided 1400-nm INP arrays yields a photocurrent density of 39.86 mA/cm(2), which is about 76 % higher than the flat counterpart (22.63 mA/cm(2)) and is only 3 % lower than the value of Lambertian limit (41.10 mA/cm(2)). The novel surface texturing scheme with 2D INP arrays has the advantages of excellent antireflection and light-trapping capabilities, an inherent low parasitic surface area, a negligible surface damage, and a good compatibility for subsequent process steps, making it a good alternative for high-performance c-Si TF solar cells.

  2. Polymer and organic solar cells viewed as thin film technologies: What it will take for them to become a success outside academia

    DEFF Research Database (Denmark)

    Krebs, Frederik C; Jørgensen, Mikkel

    2013-01-01

    when judging by the number of scientific publications whereas the application of polymer and organic solar cells in real products is completely lacking. This aspect is viewed as a sign of the polymer and organic solar cell field as being more complex and less mature and it raises the question......The polymer and organic solar cell technology is critically presented in the context of other thin film technologies with a specific focus on what it will take to make them a commercial success. The academic success of polymer and organic solar cells far outweigh any other solar cell technology...

  3. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  4. Polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping.

    Science.gov (United States)

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-07-02

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm(2), which can be increased up to 17-18 mA/cm(2) (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  5. (Sr,Ba)(Si,Ge){sub 2} for thin-film solar-cell applications: First-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh, E-mail: Kumar.Mukesh@nims.go.jp, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan); TU-NIMS Joint Research Center, School of Materials Science and Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin (China); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

    2014-05-28

    In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi{sub 2}, BaSi{sub 2}, SrGe{sub 2}, and BaGe{sub 2}) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E{sub g} ≈ 0.89–1.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the Γ-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ε(ω) = ε{sub 1}(ω) + iε{sub 2}(ω). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient α(ω) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

  6. Investigation of Cu2ZnSnS4 nanoparticles for thin-film solar cell applications

    DEFF Research Database (Denmark)

    Engberg, Sara Lena Josefin; Agersted, Karsten; Crovetto, Andrea

    2017-01-01

    We study the effect of the annealing atmosphere on grain growth of ligand-free and ligand-coated Cu2ZnSnS4 (CZTS) nanoparticle-based thin films by thermal analysis. We use thermogravimetric analysis (TGA) coupled with mass spectrometry (MS) to simultaneously monitor mass changes and evolved gases...

  7. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  8. Rapid thermal annealing effect on the spatial resistivity distribution of AZO thin films deposited by pulsed-direct-current sputtering for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Ayachi, Boubakeur, E-mail: boubakeur.ayachi@ed.univ-lille1.fr [Institute of Electronics, Microelectronics and Nanotechnology, Lille 1 University, Avenue Poincaré, UMR 8520, CS 60069, Villeneuve d’Ascq 59652 (France); Aviles, Thomas [CROSSLUX, Avenue Georges Vacher, ZI Rousset Peynier, Immeuble CCE, Rousset 13106 (France); Vilcot, Jean-Pierre [Institute of Electronics, Microelectronics and Nanotechnology, Lille 1 University, Avenue Poincaré, UMR 8520, CS 60069, Villeneuve d’Ascq 59652 (France); Sion, Cathy [Institute of Electronics, Microelectronics and Nanotechnology, Lille 1 University, Avenue Poincaré, UMR 8520, CS 60069, Villeneuve d’Ascq 59652 (France); Ecole Centrale Lille, Cité Scientifique – CS20048, Villeneuve d’Ascq 59651 (France)

    2016-03-15

    Graphical abstract: - Highlights: • High quality pulsed-DC sputtered AZO thin films were obtained after RTA treatment. • RTA for 30 s was sufficient to achieve uniform spatial resistivity distribution. • RTA for longer than 1 min showed a small increase in resistivity value. • Such improvement was attributed to grain boundaries passivation and doping activation. • In the framework of low cost solar cells development, RTA process would be helpful. - Abstract: Room temperature deposited aluminium-doped zinc oxide thin films on glass substrate, using pulsed-DC magnetron sputtering, have shown high optical transmittance and low electrical resistivity with high uniformity of its spatial distribution after they were exposed to a rapid thermal annealing process at 400 °C under N{sub 2}H{sub 2} atmosphere. It is particularly interesting to note that such an annealing process of AZO thin films for only 30 s was sufficient, on one hand to improve their optical transmittance from 73% to 86%, on the other hand to both decrease their resistivity from 1.7 × 10{sup −3} Ω cm to 5.1 × 10{sup −4} Ω cm and achieve the highest uniformity spatial distribution. To understand the mechanisms behind such improvements of the optoelectronic properties, electrical, optical, structural and morphological changes as a function of annealing time have been investigated by using hall measurement, UV–visible spectrometry, X-ray diffraction and scanning electron microscope imaging, respectively.

  9. Growth of TiO2 thin films on chemically textured Si for solar cell applications as a hole-blocking and antireflection layer

    Science.gov (United States)

    Singh, Ranveer; Kumar, Mohit; Saini, Mahesh; Singh, Avanendra; Satpati, Biswarup; Som, Tapobrata

    2017-10-01

    In this work, we investigate the broad-band photoabsorption of an n-TiO2 thin film and its hole-blocking properties when a heterostructure is grown on a chemically textured p-Si substrate. We demonstrate that average specular reflectance of conformally grown TiO2 thin films on chemically prepared pyramidally textured Si substrates can be brought down to ∼0.2% (in the wavelength range of 300-1200 nm), which increases up to ∼0.53% after annealing at 673 K in air for 1 h. X-ray diffraction data reveal the amorphous nature of as-grown TiO2 thin films which undergoes a transition to a crystalline one after annealing. In addition, bulk current-voltage characteristics show that the leakage current increases after annealing which corroborates well a with change in the band gap, as is measured from the optical absorption spectra, due to a transition from amorphous to crystalline (anatase phase) of TiO2. Moreover, TiO2/Si heterojunction allows the transport of electrons but blocks the transport of holes. The present results are not only important for the fundamental understanding of the charge transport across TiO2/Si heterostructures but also to design hole-blocking solar cells.

  10. Preparation and characterization of CuInSe{sub 2} particles via the hydrothermal route for thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Chung-Hsien; Chen, Fu-Shan; Lin, Shin-Hom [Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Lu, Chung-Hsin, E-mail: chlu@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China)

    2011-05-12

    Highlights: > A new hydrothermal process for preparing copper indium diselenide (CuInSe{sub 2}). > Well-crystallized CuInSe{sub 2} particles are obtained at 180 deg. C for 1 h. > Densified CuInSe{sub 2} thin films are prepared from ink printing. > Increasing temperatures result in an improvement of properties of CuInSe{sub 2} films. - Abstract: CuInSe{sub 2} powders with a chalcopyrite structure used in thin-film solar cells were successfully prepared via a hydrothermal method at low temperatures within short durations. Well-crystallized CuInSe{sub 2} particles were formed via the hydrothermal reaction at 180 deg. C for 1 h. The concentrations of stabilizer, triethanolamine (TEA), significantly affected the purity, morphology and particle sizes of the prepared powders. Increasing the reaction duration and temperatures led to decrease the amount of second phase In(OH){sub 3} and resulted in the formation of pure CuInSe{sub 2}. Densified CuInSe{sub 2} thin films were prepared from ink printing with the addition of the flux. Increasing the selenization temperatures increased the grain size and improved the crystallinity of CuInSe{sub 2} films.

  11. Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup, E-mail: kssong10@kumoh.ac.kr

    2016-01-15

    Graphical abstract: - Highlights: • The nanocrystalline diamond (NCD) surface is functionalized with F or O. • The cell adhesion and growth are evaluated on the functionalized NCD surface. • The cell adhesion and growth depend on the wettability of the surface. • Cell patterning was achieved by using of hydrophilic and hydrophobic surfaces. • Neuroblastoma cells were arrayed on the micro-patterned NCD surface. - Abstract: Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O{sub 2} or C{sub 3}F{sub 8} gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

  12. 3D-printed concentrator arrays for external light trapping on thin film solar cells

    NARCIS (Netherlands)

    van Dijk, Lourens; Marcus, E. A. Pepijn; Oostra, A. Jolt; Schropp, Ruud E. I.; Di Vece, Marcel

    After our recent demonstration of a 3D-printed external light trap on a small solar cell, we now consider its potential for large solar panels. An external light trap consists of a parabolic concentrator and a spacer that redirects the photons that are reflected by the solar cell back towards the

  13. Preparation of conjugated polymer-based composite thin film for application in solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yang-Yen, E-mail: yyyu@mail.mcut.edu.tw [Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Battery Research Center of Green Energy, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Center for Thin Film Technologies and Applications, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Chien, Wen-Chen [Department of Chemical Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Battery Research Center of Green Energy, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Ko, Yu-Hsin [Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Chen, Chih-Ping [Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Battery Research Center of Green Energy, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Chang, Chao-Ching [Department of Chemical and Materials Engineering, Tamkang University, 151, Yingzhuan Rd., Tamsui Dist., New Taipei City 25137, Taiwan (China)

    2015-06-01

    This paper reports on the enhanced cell efficiency of structures and properties of regioregular poly(3-hexylthiophene) (P3HT)/multiwalled carbon nanotube (MWNT) hybrid materials. The prepared hybrid materials were characterized using ultraviolet–visible absorption spectroscopy, photoluminescence spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Different concentrations of these MWNTs were suspended in polymer solutions and spin-cast onto indium tin oxide (ITO) glass. Solar cells with a device structure of ITO/poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) /P3HT:MWNTs/aluminum were then produced using evaporated aluminum as the back contact. The results showed that the ratio of P3HT to MWNTs considerably influenced the performance of the fabricated solar cells. The efficiency of the solar cells increased with the ratio of carbon nanotubes. Monochromatic incident photon-to-electron conversion efficiency analysis was performed and the results indicated that at the optimal P3HT/MWNTs ratio (= 1/1), the solar cells demonstrated a high-quality conversion of 2.16% with a fill factor of 42.22%, an open circuit voltage of 0.56 V, and a short circuit current of 9.12 mA/cm{sup 2}. - Highlights: • Solar cells ITO/PEDOT:PSS(DMSO)/P3HT:MWNT/Al were fabricated. • Optimal ratio of P3HT to MWNT was investigated. • Solar cell with 2.16% efficiency was obtained.

  14. Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

    Science.gov (United States)

    Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup

    2016-01-01

    Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O2 or C3F8 gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

  15. Identification and Analysis of Distinct Features in Imaging Thin-Film Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, K. N.; Johnston, S. W.; Sites, J. R.

    2012-06-01

    Electroluminescence and photoluminescence (EL and PL) are two imaging techniques employed at NREL that are used to qualitatively evaluate solar cells. In this work, imaging lab-scale CdTe and CIGS devices provides information about small-area PV response, which will aid in determining the effects of non-uniformities on cell performance. EL, PL, and dark lock-in thermography signatures are first catalogued. Their responses to varying conditions are then studied. Further analysis includes acquiring spectral data, making microscopy measurements, and correlating luminescence to device performance. The goal of this work is to quantitatively determine non-uniformity effects on cell performance using rapid imaging techniques.

  16. Lightweight and Flexible Metal Halide Perovskite Thin Films for High Temperature Solar Cells

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of this project is to develop metal halide perovskites (MHPs) based solar cells for high temperature operation. MHPs have been recently discovered as high...

  17. Light trapping in thin film solar cells using textured photonic crystal

    Science.gov (United States)

    Yi, Yasha [Somerville, MA; Kimerling, Lionel C [Concord, MA; Duan, Xiaoman [Amesbury, MA; Zeng, Lirong [Cambridge, MA

    2009-01-27

    A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

  18. High efficiency thin film CdTe and a-Si based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  19. Tailoring morphologies of diamond thin films for neural stem cells culturing

    Czech Academy of Sciences Publication Activity Database

    Babchenko, Oleg; Romanyuk, Nataliya; Jendelová, Pavla; Kromka, Alexander

    2013-01-01

    Roč. 250, č. 12 (2013), s. 2717-2722 ISSN 0370-1972 R&D Projects: GA ČR GAP108/12/0996; GA MŠk(CZ) LM2011026; GA ČR GAP108/10/1560 Institutional support: RVO:68378271 ; RVO:68378041 Keywords : diamond films morphology * surface treatment * neural stem cells * cells culturing Subject RIV: BO - Biophysics Impact factor: 1.605, year: 2013

  20. Low temperature sintering of thin film polymer/TiO2 solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fahrenson, Christoph; Paul, Sylvia; Neher, Dieter [Universitaet Potsdam (Germany); Schroeder, Michael [Justus-Liebig-Universitaet Giessen (Germany); Janietz, Silvia [Fraunhofer-Institut fuer Angewandte Polymerforschung, Golm (Germany)

    2011-07-01

    Hybrid solar cells combine an organic semiconductor with a suitable inorganic semiconductor. In addition to studies on the well-known Graetzel cell, combinations of a dense or nanostructured TMO layer with soluble conjugated polymers have been subject to recent investigations. One of the problems in the development of efficient polymer/TiO{sub 2} cell is the sintering of TiO{sub 2}-layer. In most cases, the TiO{sub 2} layer is prepared via the sol-gel technique and annealing at high temperatures is needed to transform the amorphous layer morphology into a crystalline nanoporous structure. We present a new method to prepare thin layers from crystalline titania nanoparticles while keeping the processing temperature below 100 C. Interlinkage between the individual TiO{sub 2} particle is enforced by illumination with UVC-light. Scanning electron microscope (SEM) is used to image the morphology of the thin nanoporous layers. Solar cells were built with the Titanium dioxide layers sintered at moderate temperatures or after UVC sintering, using different donor polymers. Initial experiments show that cells with UVC-sintered layers show comparable solar cell performances than devices using conventional titania layers.

  1. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  2. Ionization effects on Cu(In, Ga)Se{sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kawakita, Shirou; Imaizumi, Mitsuru [Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0031 (Japan); Ishizuka, Shogo; Shibata, Hajime [Institute of National Advanced Industrial Science and Technology, 1-1 Umezono, Tsukuba 305-8568 (Japan); Okuda, Shuichi [Osaka Prefecture University, 1-2 Gakuenmachi, Sakai 599-8570 (Japan)

    2017-06-15

    Cu (In, Ga) Se{sub 2} (CIGS) solar cells were irradiated with 60, 100, and 250 keV electrons to reveal the characteristics of radiation induced defects. Electrons with less than 200 keV energy cannot generate any displacement defects in CIGS materials. In addition, a low amount of the electrons can improve the roll-over behavior in current-voltage characteristics of CIGS solar cells. However, the deterioration of the electrical performance in CIGS solar cells irradiated with a high amount of electrons was observed. The deterioration rate on the cells irradiated with lower-energy electrons was higher than that induced by electrons with higher-energy. The degradation curve of J{sub SC} based on the ionizing dose estimated from the ionizing energy loss model does not depend on the energy of electrons. Therefore, it implies that the electrons can degrade CIGS solar cells due to the ionization effect. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Matching of Silicon Thin-Film Tandem Solar Cells for Maximum Power Output

    Directory of Open Access Journals (Sweden)

    C. Ulbrich

    2013-01-01

    Full Text Available We present a meaningful characterization method for tandem solar cells. The experimental method allows for optimizing the output power instead of the current. Furthermore, it enables the extraction of the approximate AM1.5g efficiency when working with noncalibrated spectra. Current matching of tandem solar cells under short-circuit condition maximizes the output current but is disadvantageous for the overall fill factor and as a consequence does not imply an optimization of the output power of the device. We apply the matching condition to the maximum power output; that is, a stack of solar cells is power matched if the power output of each subcell is maximal at equal subcell currents. The new measurement procedure uses additional light-emitting diodes as bias light in the JV characterization of tandem solar cells. Using a characterized reference tandem solar cell, such as a hydrogenated amorphous/microcrystalline silicon tandem, it is possible to extract the AM1.5g efficiency from tandems of the same technology also under noncalibrated spectra.

  4. A model to analyze strategic products for photovoltaic silicon thin-film solar cell power industry

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Amy H.I. [Department of Technology Management, Chung Hua University, No. 707, Sec. 2, Wu Fu Rd., Hsinchu 300 (China); Chen, Hsing Hung [Faculty of Management and Administration, Macau University of Science and Technology, Avenue Wei Long, Taipa, Macau (China); Kang, He-Yau [Department of Industrial Engineering and Management, National Chin-Yi University of Technology, 35, Lane 215, Sec. 1, Chung San Rd., Taiping, Taichung 411 (China)

    2011-02-15

    With natural resource scarcity and environmental protection, the use of renewable energy has become a promise for offering clean and plentiful energy. Photovoltaic (PV) solar cell is one of the emerging renewable energy applications; however, it suffers a large difficulty in high production cost with low conversion efficiency currently. Hence, an urgent pressure to upgrade technology and to formulate product strategy is evident in the solar cell power industry. In order to prosper PV silicone solar cell power industry, the paper develops a conceptual model, which is composed of a fuzzy analytic network process with interpretive structural modeling and benefits, opportunities, costs and risks, to help analyze suitable strategic products. The empirical study shows that the conceptual model can effectively and precisely handle such a complicated problem and can lead to an outstanding performance result. (author)

  5. Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

    International Nuclear Information System (INIS)

    McPheeters, Claiborne O; Yu, Edward T; Hu, Dongzhi; Schaadt, Daniel M

    2012-01-01

    Sub-wavelength photonic structures and nanoscale materials have the potential to greatly improve the efficiencies of solar cells by enabling maximum absorption of sunlight. Semiconductor heterostructures provide versatile opportunities for improving absorption of infrared radiation in photovoltaic devices, which accounts for half of the power in the solar spectrum. These ideas can be combined in quantum-well solar cells and related structures in which sub-wavelength metal and dielectric scattering elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than one micron of active material demonstrate the benefits of incorporating In(Ga)As quantum-wells and quantum-dots to improve their performance. Simulations that incorporate a realistic model of absorption in quantum-wells show that the use of broadband photonic structures with such devices can substantially improve the benefit of incorporating heterostructures, enabling meaningful improvements in their performance

  6. The AM1.5 absorption factor of thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Santbergen, R.; Goud, J.M.; van Zolingen, R.J.C. [Eindhoven University of Technology, Department of Mechanical Engineering, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Zeman, M. [Delft University of Technology, EEC-DIMES, P.O. Box 5053, 2600 GB Delft (Netherlands); van Roosmalen, J.A.M. [Energy Research Centre of The Netherlands ECN, P.O. Box 1, 1755 ZG Petten (Netherlands)

    2010-05-15

    Both for photovoltaic and photovoltaic/thermal applications insight is required in the mechanisms that determine the effective absorption factor A{sub eff}. A{sub eff} is the part of the incident irradiation that is converted into heat, taking into account that part of the energy is withdrawn as electricity. A{sub eff} was studied for five different solar cell technologies using an optical simulation model and ranges from 74% for single junction amorphous silicon solar cells to 82% for CIGS solar cells. The simulations also show that the longer wavelength part of the spectrum is hardly absorbed by the active semiconductors, but mostly by free carrier absorption in the transparent conductive oxide film present in these devices. (author)

  7. Human microvascular endothelial cell seeding on Cr-DLC thin films for heart valve applications

    Science.gov (United States)

    Ali, N.; Kousar, Y.; Gracio, J.; Titus, E.; Okpalugo, T. I.; Singh, V.; Pease, M.; Ogwu, A. A.; Meletis, E. I.; Ahmed, W.; Jackson, M. J.

    2006-04-01

    In this investigation, Cr-modified diamond-like carbon (Cr-DLC) films were studied for potential applications in mechanical heart valves. Three Cr-DLC samples were prepared using a magnetron sputtering technique employing an intensified plasma-assisted processing (IPAP) system. The three samples consisted of the following Cr contents: 1, 5, and 10 at.%. The biological response of human microvascular endothelial cells (HMV-EC), seeded on Cr-DLC films, was evaluated in terms of initial cell attachment and growth. The Cr-DLC films were characterized using Raman spectroscopy, x-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, and by the contact angle technique. Endothelial cell adhesion and growth were found to be affected by changing the Cr content of Cr-DLC films.

  8. Optimisation of Spray Deposited SnO 2 Thin Film for Solar Cell ...

    African Journals Online (AJOL)

    The use of conducting tin-oxide (SnO2 ) films for fabrication of solar cell is becoming increasingly important because of reasonably high efficiency and ease in fabrication. The role of the thin-oxide film is very critical for high efficiency. Resistivity, thickness and transmittance of the film should be of correct order. The most ...

  9. Energy efficiency of a photovoltaic cell based thin films CZTS by ...

    African Journals Online (AJOL)

    In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on CuZnSnS4 (CZTS) looks promising. Cu2ZnSnS4 (CZTS) is a new film ...

  10. Measurement of beta-amyloid peptides in specific cells using a photo thin-film transistor

    Science.gov (United States)

    Kim, Chang-Beom; Chae, Cheol-Joo; Shin, Hye-Rim; Song, Ki-Bong

    2012-01-01

    The existence of beta-amyloid [Aβ] peptides in the brain has been regarded as the most archetypal biomarker of Alzheimer's disease [AD]. Recently, an early clinical diagnosis has been considered a great importance in identifying people who are at high risk of AD. However, no microscale electronic sensing devices for the detection of Aβ peptides have been developed yet. In this study, we propose an effective method to evaluate a small quantity of Aβ peptides labeled with fluorescein isothiocyanate [FITC] using a photosensitive field-effect transistor [p-FET] with an on-chip single-layer optical filter. To accurately evaluate the quantity of Aβ peptides within the cells cultured on the p-FET device, we measured the photocurrents which resulted from the FITC-conjugated Aβ peptides expressed from the cells and measured the number of photons of the fluorochrome in the cells using a photomultiplier tube. Thus, we evaluated the correlation between the generated photocurrents and the number of emitted photons. We also evaluated the correlation between the number of emitted photons and the amount of FITC by measuring the FITC volume using AFM. Finally, we estimated the quantity of Aβ peptides of the cells placed on the p-FET sensing area on the basis of the binding ratio between FITC molecules and Aβ peptides.

  11. FS laser processing of bio-polymer thin films for studying cell-to-substrate specific response

    Energy Technology Data Exchange (ETDEWEB)

    Daskalova, A., E-mail: a_daskalova@code.bg [Institute of Electronics, Bulgarian Academy of Sciences, 72, Tsarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Nathala, Chandra S.R. [Institute of General Physics, Vienna University of Technology, Wiedner Hauptstr. 8-10/134, A-1040 Wien (Austria); Spectra-Physics Vienna, Fernkorngasse 10, 1100 Wien (Austria); Kavatzikidou, P.; Ranella, A. [Institute for Electronic Structure and Lasers-FORTH, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Szoszkiewicz, R. [Faculty of Materials Science and Engineering, Warsaw University of Technology, 141 Woloska Str., 02-507 Warsaw, Poland (Poland); Husinsky, W. [Institute of General Physics, Vienna University of Technology, Wiedner Hauptstr. 8-10/134, A-1040 Wien (Austria); Fotakis, C. [Institute for Electronic Structure and Lasers-FORTH, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece)

    2016-09-30

    Highlights: • Systematic research in the field of fs laser interaction with biopolymers for application in tissue engineering. • Utilizing a new biopolymer blend of collagen/elastin material for studying the interaction process in the fs domain. • Obtaining of improved, circularly shaped, interconnected nanopores, with high reproducibility from collagen/elastin layer. • Observation of randomly arranged pattern outside modification zone due to formation of an impact wave over biofilm surface. • NIH/3T3 cell-interface interaction reveal a preferable cell migration on fs laser-modified surface array. - Abstract: The use of ultra-short pulses for nanoengineering of biomaterials opens up possibilities for biological, medical and tissue engineering applications. Structuring the surface of a biomaterial into arrays with micro- and nanoscale features and architectures, defines new roadmaps to innovative engineering of materials. Thin films of novel collagen/elastin composite and gelatin were irradiated by Ti:sapphire fs laser in air at central wavelength 800 nm, with pulse durations in the range of 30 fs. The size and shape as well as morphological forms occurring in the resulted areas of interaction were analyzed as a function of irradiation fluence and number of pulses by atomic force microscopy (AFM). The fs interaction regime allows generation of well defined micro porous surface arrays. In this study we examined a novel composite consisting of collagen and elastin in order to create a biodegradable matrix to serve as a biomimetic surface for cell attachment. Confocal microscopy images of modified zones reveal formation of surface fringe patterns with orientation direction alongside the area of interaction. Outside the crater rim a wave-like topography pattern is observed. Structured, on a nanometer scale, surface array is employed for cell-culture experiments for testing cell’s responses to substrate morphology. Mice fibroblasts migration was monitored

  12. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. (Georgia Inst. of Tech., Atlanta, GA (United States))

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  13. Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells

    KAUST Repository

    Sergeant, Nicholas P.

    2013-04-24

    Dielectric/metal/dielectric (DMD) electrodes have the potential to significantly increase the absorption efficiency and photocurrent in flexible organic solar cells. We demonstrate that this enhancement is attributed to a broadband cavity resonance. Silver-based semitransparent DMD electrodes with sheet resistances below 10 ohm/sq. are fabricated on flexible polyethylene terephthalate (PET) substrates in a high-throughput roll-to-roll sputtering tool. We carefully study the effect of the semitransparent DMD electrode (here composed of ZnxSnyOz/Ag/InxSn yOz) on the optical device performance of a copper phthalocyanine (CuPc)/fullerene (C60) bilayer cell and illustrate that a resonant cavity enhanced light trapping effect dominates the optical behavior of the device. © 2013 Optical Society of America.

  14. Annealing of polycrystalline thin film silicon solar cells in water vapour at sub-atmospheric pressures

    Czech Academy of Sciences Publication Activity Database

    Pikna, Peter; Píč, Vlastimil; Benda, V.; Fejfar, Antonín

    2014-01-01

    Roč. 54, č. 5 (2014), s. 341-347 ISSN 1210-2709 R&D Projects: GA MŠk 7E10061 EU Projects: European Commission(XE) 240826 - PolySiMode Grant - others:AVČR(CZ) M100101216 Institutional support: RVO:68378271 Keywords : passivation * water vapour * thin film solar cell * polycrystalline silicon (poly-Si) * multicrys- talline silicon (m-Si) * Suns-VOC Subject RIV: JE - Non-nuclear Energetics, Energy Consumption ; Use

  15. ENERGY EFFICIENCY OF A PHOTOVOLTAIC CELL BASED THIN FILMS CZTS BY SCAPS

    Directory of Open Access Journals (Sweden)

    C. Mebarkiaa

    2016-05-01

    Full Text Available In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on CuZnSnS4 (CZTS looks promising. Cu2ZnSnS4 (CZTS is a new film absorber, with good physical properties (band gap energy 1.4-1.6 eV [01] with a large absorption coefficient over 104 cm-1. Indeed, the performance of these cells exceeded 30% in recent years.In the present paper, our work based on modeling and numerical simulation, we used SCAPS to study the performance of solar cells based on Cu2ZnSnS4 (CZTS and thus evaluate the electrical efficiency η for typical structures of ZnO / i- ZnO / CdS / CZTS and ITO / ZnO / CdS / CZTS. Furthermore, the influence of the change of CdS by ZnSe buffer layer was treated in this paper.

  16. Thin films and solar cells of cadmium telluride and cadmium zinc telluride

    Science.gov (United States)

    Ferekides, Christos Savva

    The objectives of this dissertation are to investigate (1) the metalorganic chemical vapor deposition (MOCVD) and properties of cadmium telluride (CdTe) and cadmium zinc telluride (Cd(1-x)Zn(z)Te) films and junctions, and their potential application to solar cells, and (2) the fabrication and characterization of CdTe solar cells by the close spaced sublimation (CSS) technique. CdTe and Cd(1-x)Zn(x)Te films have been deposited by MOCVD on a variety of substrates at 300-400 C. The effect of the deposition parameters and post deposition heat treatments on the electrical, optical, and structural properties have been investigated. Heterojunctions of the configuration CdTe/transparent conducting semiconductor (TCS) and Cd(1-x)Zn(x)Te/TCS have been prepared and characterized. CdTe(MOCVD)/CdS and Cd(1-x)Zn(x)Te(E sub g = 1.65eV)/Cd(1-x)Zn(x)S solar cells with efficiencies of 9.9 percent and 2.4 percent, respectively have been fabricated. The as-deposited CdTe(MOCVD)/CdS junctions exhibited high dark current densities due to deflects at the interface associated with small grain size. Their characteristics of the Cd(1-x)Zn(x)Te junctions degraded with increasing Zn concentration due to the crystalline quality and very small grain size (0.3 microns) in films with high ZnTe contents (greater than 25 percent). No effective post-deposition heat treatment has been developed. CdTe/CdS solar cells have also been fabricated by the close spaced sublimation (CSS). Significant improvements in material and processing have been made, and in collaboration with fellow researchers an AM1.5 conversion efficiency of 13.4 percent has been demonstrated, the highest efficiency ever measured for such devices. The highest conversion efficiency for the CdTe(CSS)/CdS solar cell was achieved by reaching high open-circuit voltages and fill factors, while the short-circuit current densities were moderate. These results indicate that further improvements to increase the short-circuit current densities

  17. Dyadic Green's functions of thin films: Applications within plasmonic solar cells

    DEFF Research Database (Denmark)

    Jung, Jesper; Søndergaard, Thomas; Pedersen, Thomas Garm

    2011-01-01

    Optimization and design of silicon solar cells by exploiting light scattering frommetal nanoparticles to increase the efficiency is addressed in the small particle limit from a fundamental point of view via the dyadic Green’s function formulation. Based on the dyadic Green’s function (Green’s...... tensor) of a three-layer geometry, light scattering from electric point dipoles (representing small metal scatterers) located within a thin layer sandwiched between a substrate and a superstrate is analyzed. Starting from the full dyadic Green’s function we derive analytical near- and far...

  18. Microstructure characterization of onion (A.cepa) peels and thin films for dye sensitized solar cells

    Science.gov (United States)

    Abodunrin, T.; Boyo, A.; Usikalu, M.; Obafemi, L.; Oladapo, O.; Kotsedi, L.; Yenus, Z.; Maaza, M.

    2017-03-01

    A.cepa peels are obtained from mature onion bulbs. Because of the continuous need for energy, alternative avenues for producing energy are gaining importance. The motivation for this work is based on an urgent need to source energy from readily available waste materials like domestic onion peels. Dye sensitized solar cells (DSSCs) fabricated via doctor blade method and high temperature sintering from waste (onion peels) are investigated for their ability to convert solar to electrical energy. The charge carriers were revealed under phytochemical screening. Functional groups of compounds present in A.cepa peel were analyzed with Fourier transform in infrared (FTIR). The influence of different electrolyte sensitizer is observed on the DSSCs under standard air mass conditions of 1.5 AM. The microstructure properties of these A.cepa DSSCs were explored using scanning electron microscope with energy dispersive spectroscopy (SEM/EDS), x-ray diffraction and Fluorecence spectroscopy (XRF). The interfacial boundary between A.cepa dye, TiO2 framework of TiO2 and indium doped tin oxide (ITO) reveals several prominent anatase and rutile peaks. Photoelectric results, revealed dye-sensitized solar cells with a maximum power output of 126 W and incident photon to conversion energy (IPCE) of 0.13%.This work has established that A.cepa peels can be used as a source of micro-energy generation.

  19. A facile inexpensive route for SnS thin film solar cells with SnS{sub 2} buffer

    Energy Technology Data Exchange (ETDEWEB)

    Gedi, Sreedevi [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Minna Reddy, Vasudeva Reddy, E-mail: drmvasudr9@gmail.com [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Pejjai, Babu [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Jeon, Chan-Wook [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Park, Chinho, E-mail: chpark@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Ramakrishna Reddy, K.T., E-mail: ktrkreddy@gmail.com [Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India)

    2016-05-30

    Graphical abstract: PYS spectra of SnS/SnS{sub 2} interface and the related band diagram. - Highlights: • A low cost SnS solar cell is developed using chemical bath deposition. • We found E{sub I} & χ of SnS (5.3 eV & 4.0 eV) and SnS{sub 2} (6.9 eV & 4.1 eV) films from PYS. • Band offsets of 0.1 eV (E{sub c}) and 1.6 eV (E{sub v}) are estimated for SnS/SnS{sub 2} junction. • SnS based solar cell showed a conversion efficiency of 0.51%. - Abstract: Environment-friendly SnS based thin film solar cells with SnS{sub 2} as buffer layer were successfully fabricated from a facile inexpensive route, chemical bath deposition (CBD). Layer studies revealed that as-grown SnS and SnS{sub 2} films were polycrystalline; (1 1 1)/(0 0 1) peaks as the preferred orientation; 1.3 eV/2.8 eV as optical band gaps; and showed homogeneous microstructure with densely packed grains respectively. Ionization energy and electron affinity values were found by applying photoemission yield spectroscopy (PYS) to the CBD deposited SnS and SnS{sub 2} films for the first time. These values obtained as 5.3 eV and 4.0 eV for SnS films; 6.9 eV and 4.1 eV for SnS{sub 2} films. The band alignment of SnS/SnS{sub 2} junction showed TYPE-II heterostructure. The estimated conduction and valance band offsets were 0.1 eV and 1.6 eV respectively. The current density–voltage (J–V) measurements of the cell showed open circuit voltage (V{sub oc}) of 0.12 V, short circuit current density (J{sub sc}) of 10.87 mA cm{sup −2}, fill factor (FF) of 39% and conversion efficiency of 0.51%.

  20. Cu2ZnSnS4 Nanoparticle Absorber Layers for Thin-Film Solar Cells

    DEFF Research Database (Denmark)

    Engberg, Sara Lena Josefin

    for the succeeding sulfurization step. For this objective, two main routes have been pursued. The first route was related to synthesizing larger nanoparticles than the typical outcome of the synthesis route used, as these could be a better starting material for grain growth. This was achieved by utilizing a two...... challenging to remove in the succeeding annealing steps. By choosing suitable solvents and precursors, organic ligand-free nanoparticles were successfully synthesized in a facile one-step process. These particles further introduced the advantage that they could be dispersed in simple solvents such as water......%. This thesis is a part of the work done in making the prospects of solutionprocessed CZTS more fruitful. In addition to an inexpensive material, a cheap production pathway is also required for the material to be suitable for solar cells of the future. Solution-processing comprises either a nanoparticle ink...

  1. Thienoisoindigo-Based Polymers Bearing Diethynylbenzene and Diethynylanthracene Units for Thin Film Transistors and Solar Cells.

    Science.gov (United States)

    Han, Pei; Zhang, Xueqin; Gong, Xiaohui; Wen, Hui; Zhang, Yidong; Lin, Baoping; Zhang, Lei; Ye, Shanghui; Sun, Ying; Yang, Hong

    2018-08-01

    Two thienoisoindigo-based donor-acceptor conjugated polymers were synthesized via Sonogashira coupling reaction with 1,4-diethynylbenzene (P(TII-BEN)) and 9,10-diethynylanthracene (P(TII-ANT)) as donor units, respectively. The optical and electrochemical properties of the polymers were also investigated. The highest hole mobility were 4.38 × 10-3 cm2 V-1 s-1 for P(TII-BEN) and 9.40 × 10-3 cm2 V-1 s-1 for P(TII-ANT) in bottom-gated/top-contact field-effect transistors. The bulk heterojunction organic solar cells consisting of the polymers and PC71BM yielded power conversion efficiencies of 1.59% for P(TII-BEN) and 1.90% for P(TII-ANT). Moreover, the microstructures were investigated by X-ray diffraction and atomic force microscopy.

  2. Anthradithiophene-Containing Copolymers for Thin-Film Transistors and Photovoltaic Cells

    KAUST Repository

    Jiang, Ying

    2010-08-10

    We synthesized anthradithiophene-cyclopentadithiophene conjugated copolymers via Stille coupling. The anthradithiophene core was verified to be superior in stability compared to pentacene toward Diels-Alder cycloaddition and therefore more compatible with fullerenes, acceptor material commonly used in bulk heterojunction (BHJ) photovoltaic cells. The polymers exhibit high film absorption coefficients of 105 cm-1, an order of magnitude higher than previously reported anthradithiophene-dialkylfluorene copolymers. Short-circuit currents exceeding 5 mA/cm2 and a BHJ device efficiency close to 1% were achieved when device morphology was improved with diiodooctane as a solvent additive. This is the highest power conversion efficiency achieved by an acene-containing polymer so far. © 2010 American Chemical Society.

  3. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Ying; He, Zhiqun, E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B., E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk [SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

    2014-03-10

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200 nm)/i-Si(450 nm)/n-Si(200 nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  4. ITO-Free Semitransparent Organic Solar Cells Based on Silver Thin Film Electrodes

    Directory of Open Access Journals (Sweden)

    Zhizhe Wang

    2014-01-01

    Full Text Available ITO-free semitransparent organic solar cells (OSCs based on MoO3/Ag anodes with poly(3-hexylthiophene and [6,6]-phenyl-C61-butyric acid methyl ester films as the active layer are investigated in this work. To obtain the optimal transparent (MoO3/Ag anode, ITO-free reference OSCs are firstly fabricated. The power conversion efficiency (PCE of 2.71% is obtained for OSCs based on the optimal MoO3 (2 nm/Ag (9 nm anode, comparable to that of ITO-based reference OSCs (PCE of 2.85%. Then based on MoO3 (2 nm/Ag (9 nm anode, ITO-free semitransparent OSCs with different thickness combination of Ca and Ag as the cathodes are investigated. It is observed from our results that OSCs with Ca (15 nm/Ag (15 nm cathode have the optimal transparency. Meanwhile, the PCE of 1.79% and 0.67% is obtained for illumination from the anode and cathode side, respectively, comparable to that of similar ITO-based semitransparent OSCs (PCE of 1.59% and 0.75% for illumination from the anode and cathode side, resp. (Sol. Energy Mater. Sol. Cells, 95, pp. 877–880, 2011. The transparency and PCE of ITO-free semitransparent OSCs can be further improved by introducing a light couple layer. The developed method is compatible with various substrates, which is instructive for further research of ITO-free semitransparent OSCs.

  5. Processing of Copper Zinc Tin Sulfide Nanocrystal Dispersions for Thin Film Solar Cells

    Science.gov (United States)

    Williams, Bryce Arthur

    A scalable and inexpensive renewable energy source is needed to meet the expected increase in electricity demand throughout the developed and developing world in the next 15 years without contributing further to global warming through CO2 emissions. Photovoltaics may meet this need but current technologies are less than ideal requiring complex manufacturing processes and/or use of toxic, rare-earth materials. Copper zinc tin sulfide (Cu 2ZnSnS4, CZTS) solar cells offer a true "green" alternative based upon non-toxic and abundant elements. Solution-based processes utilizing CZTS nanocrystal dispersions followed by high temperature annealing have received significant research attention due to their compatibility with traditional roll-to-roll coating processes. In this work, CZTS nanocrystal (5-35 nm diameters) dispersions were utilized as a production pathway to form solar absorber layers. Aerosol-based coating methods (aerosol jet printing and ultrasonic spray coating) were optimized for formation of dense, crack-free CZTS nanocrystal coatings. The primary variables underlying determination of coating morphology within the aerosol-coating parameter space were investigated. It was found that the liquid content of the aerosol droplets at the time of substrate impingement play a critical role. Evaporation of the liquid from the aerosol droplets during coating was altered through changes to coating parameters as well as to the CZTS nanocrystal dispersions. In addition, factors influencing conversion of CZTS nanocrystal coatings into dense, large-grained polycrystalline films suitable for solar cell development during thermal annealing were studied. The roles nanocrystal size, carbon content, sodium uptake, and sulfur pressure were found to have pivotal roles in film microstructure evolution. The effects of these parameters on film morphology, grain growth rates, and chemical makeup were analyzed from electron microscopy images as well as compositional analysis

  6. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J.U.; Mao, D. [Colorado School of Mines, Golden, CO (United States). Dept. of Physics

    1998-01-01

    During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

  7. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid

  8. Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jie [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Yu, Yue [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Ke, Weijun [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Li, Jian [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Tan, Xinxuan [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; Wang, Zhiwei [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; National Renewable Energy Laboratory, Golden CO 80401 United States; Chu, Junhao [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai 800081 China; Yan, Yanfa [Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States

    2016-07-11

    Annealing in S vapor greatly improves the performance of electroplated Cu2ZnSnS4 (CZTS) solar cells based on the bifacial configuration of Al-doped ZnO (AZO, front contact)/ZnO/CdS/CZTS/indium tin oxide (ITO, back contact), as compared to H2S annealing in our previous works. S-vapor annealing does not cause severe damage to the conductivity of the ITO back contact. The highest device efficiency of 5.8% was reached under 1 sun illumination from the AZO side. The well-preformed devices based on the ITO back contact demonstrate smaller series resistances and better fill factors, as compared to our substrate-type devices using Mo back contacts. An interfacial reaction at the ITO back contact has been revealed in experiments, which contributes to the formation of SnO2-enriched interfacial layer and diffusion of In from ITO into CZTS through the Sn sites. Incorporation of In does not significantly change the optical and structural properties or the grain size of CZTS absorbers.

  9. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...... reflector increases its reflectance drastically. The process is performed at low temperature (150°C) to allow the use of plastic sheets such as polyethylene naphthalate and increases the efficiency of single junction amorphous solar cells dramatically. We present the best result obtained on a flexible...

  10. Broadband photocurrent enhancement and light-trapping in thin film Si solar cells with periodic Al nanoparticle arrays on the front

    DEFF Research Database (Denmark)

    Uhrenfeldt, Christian; Villesen, Thorbjørn Falk; Tetu, Amelie

    2015-01-01

    it is shown that this broadband enhancement is due to single particle resonances that give rise to light-trapping in the infrared spectral range and to collective resonances that ensure an efficient in-coupling of light in the ultraviolet-blue spectral range. © 2015 Optical Society of America....... on the front of a thin film Si test solar cell. It is demonstrated that the resonances from the Al nanoparticle array cause a broadband photocurrent enhancement ranging from the ultraviolet to the infrared with respect to a reference cell. From the experimental results as well as from numerical simulations...

  11. Impact of regioregularity on thin-film transistor and photovoltaic cell performances of pentacene-containing polymers

    KAUST Repository

    Jiang, Ying

    2012-01-01

    Regioregular pentacene-containing polymers were synthesized with alkylated bithiophene (BT) and cyclopentadithiophene (CPDT) as comonomers. Among them, 2,9-conjugated polymers PnBT-2,9 and PnCPDT-2,9 achieved the best performance in transistor and photovoltaic devices respectively. The former achieved the most highly ordered structures in thin films, yielding ambipolar transistor behavior with hole and electron mobilities up to 0.03 and 0.02 cm 2 V -1 s -1 on octadecylsilane-treated substrates. The latter achieved photovoltaic power conversion efficiencies up to 0.33%. The impact of regioregularity and direction of conjugation-extension (2,9 vs. 2,10), on thin-film order and device performance has been demonstrated for the pentacene-containing polymers for the first time, providing insight towards future functional material design. © 2012 The Royal Society of Chemistry.

  12. Correlation studies between surface tension energy and ionic mobility in silicone - Dammar thin film for dye sensitized solar cells

    Science.gov (United States)

    Zakaria, R.; Ahmad, A. H.; Taib, M. F. Mohamad; Hassan, O. H.; Yahya, M. Z. A.; Ali, A. M. M.

    2017-09-01

    Organic thin film system consisting of Silicone-dammar (SD) polymer resin was prepared and studied with respect to their electrochemical properties. Dammar which is a local plant resin (Dipterocaupacea sp) was mixed with silicone in various compositions and the two components were modified by using a solvent. A thin film layered on glass slaid was obtained by Doctor Blade method and cured at room temperature. Silicone-dammar with a composition ratio of 80:20 (SD20) showed the highest non-wetting angle at 90.13 degrees however the sample with a composition ratio of 90:10 (SD10) showed the highest surface tension energy at 179.80 J in the contact angle test. Electrochemical Impedance Spectroscopy (EIS) analysis was done to investigate the electron transport and it was found that the SD10 sample provides a good medium for ionic mobility.

  13. Optical and Morphological Studies of Thermally Evaporated PTCDI-C8 Thin Films for Organic Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ronak Rahimi

    2013-01-01

    Full Text Available PTCDI-C8 due to its relatively high photosensitivity and high electron mobility has attracted much attention in organic semiconductor devices. In this work, thin films of PTCDI-C8 with different thicknesses were deposited on silicon substrates with native silicon dioxide using a vacuum thermal evaporator. Several material characterization techniques have been utilized to evaluate the structure, morphology, and optical properties of these films. Their optical constants (refractive index and extinction coefficient have been extracted from the spectroscopic ellipsometry (SE. X-ray reflectivity (XRR and atomic force microscopy (AFM were employed to determine the morphology and structure as well as the thickness and roughness of the PTCDI-C8 thin films. These films revealed a high degree of structural ordering within the layers. All the experimental measurements were performed under ambient conditions. PTCDI-C8 films have shown to endure ambient condition which allows pots-deposition characterization.

  14. Laser thermoreflectance for semiconductor thin films metrology

    Science.gov (United States)

    Gailly, P.; Hastanin, J.; Duterte, C.; Hernandez, Y.; Lecourt, J.-B.; Kupisiewicz, A.; Martin, P.-E.; Fleury-Frenette, K.

    2012-06-01

    We present a thermoreflectance-based metrology concept applied to compound semiconductor thin films off-line characterization in the solar cells scribing process. The presented thermoreflectance setup has been used to evaluate the thermal diffusivity of thin CdTe films and to measure eventual changes in the thermal properties of 5 μm CdTe films ablated by nano and picosecond laser pulses. The temperature response of the CdTe thin film to the nanosecond heating pulse has been numerically investigated using the finite-difference time-domain (FDTD) method. The computational and experimental results have been compared.

  15. Thin film polycrystalline Si solar cells studied in transient regime by optical pump-terahertz probe spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Pikna, Peter; Skoromets, Volodymyr; Becker, C.; Fejfar, Antonín; Kužel, Petr

    2015-01-01

    Roč. 107, č. 23 (2015), "233901-1"-"233901-5" ISSN 0003-6951 R&D Projects: GA ČR GA13-12386S Grant - others:AVČR(CZ) M100101216 Institutional support: RVO:68378271 Keywords : thin film polycrystalline silicon * terahertz spectroscopy * passivation * Suns-Voc method * defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.142, year: 2015

  16. On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Qiu, Y.; Kunz, O.; Fejfar, Antonín; Ledinský, Martin; Teik Chan, B.; Gordon, I.; Van Gestel, D.; Venkatachalm, S.; Egan, R.

    2014-01-01

    Roč. 122, MAR (2014), s. 31-39 ISSN 0927-0248 R&D Projects: GA MŠk 7E10061; GA MŠk(CZ) LM2011026 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional support: RVO:68378271 Keywords : silicon * thin films * polycrystalline * hydrogenation * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.337, year: 2014 http://www.sciencedirect.com/science/article/pii/S0927024813006016

  17. Nanostructured Mesoporous Titanium Dioxide Thin Film Prepared by Sol-Gel Method for Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    Yu-Chang Liu

    2011-01-01

    Full Text Available Titanium dioxide (TiO2 paste was prepared by sol-gel and hydrothermal method with various precursors. Nanostructured mesoporous TiO2 thin-film back electrode was fabricated from the nanoparticle colloidal paste, and its performance was compared with that made of commercial P25 TiO2. The best performance was demonstrated by the DSSC having a 16 μm-thick TTIP-TiO2 back electrode, which gave a solar energy conversion efficiency of 6.03%. The ability of stong adhesion on ITO conducting glass substrate and the high surface area are considered important characteristics of TiO2 thin film. The results show that a thin film with good adhesion can be made from the prepared colloidal paste as a result of alleviating the possibility of electron transfer loss. One can control the colloidal particle size from sol-gel method. Therefore, by optimizing the preparation conditions, TiO2 paste with nanoparticle and narrow diameter distribution was obtained.

  18. Transparent Conducting Mo-Doped CdO Thin Films by Spray Pyrolysis Method for Solar Cell Applications

    Science.gov (United States)

    Helen, S. J.; Devadason, Suganthi; Haris, M.; Mahalingam, T.

    2018-04-01

    Pure and 3%, 5%, and 7% molybdenum-doped cadmium oxide (CdO) thin films have been prepared on glass substrates preheated to 400°C using a spray pyrolysis technique, then analyzed using x-ray diffraction analysis, field-emission scanning electron microscopy, ultraviolet-visible spectroscopy, and photoluminescence and Hall measurements. The films were found to have polycrystalline nature with cubic structure. The crystallite size was calculated to be ˜ 12 nm for various doping concentrations. Doping improved the optical transparency of the CdO thin film, with the 5% Mo-doped film recording the highest transmittance in the optical region. The energy bandgap deduced from optical studies ranged from 2.38 eV and 2.44 eV for different Mo doping levels. The electrical conductivity was enhanced on Mo doping, with the highest conductivity of 1.74 × 103 (Ω cm)-1 being achieved for the 5% Mo-doped CdO thin film.

  19. Some physical parameters of CuInGaS{sub 2} thin films deposited by spray pyrolysis for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kotbi, Ahmed [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Hartiti, Bouchaib; Fadili, Salah [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Ridah, Abderraouf [Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Thevenin, Philippe [University of Lorraine, LMOPS Laboratory, Department of Physics, Metz (France)

    2017-05-15

    Copper-indium-gallium-disulphide (CuInGaS{sub 2}) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS{sub 2} (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS{sub 2} films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm{sup -1}. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E{sub Tail}) of CuInGaS{sub 2} thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS{sub 2} make them an attractive material for photovoltaic devices. (orig.)

  20. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (development of fabrication technology of thin film polycrystalline Si solar cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (usumaku takessho silicon kei taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of thin film polycrystalline Si solar cells in fiscal 1994. (1) On the fabrication technology of high-quality Si thin films, the new equipment was studied which allows uniform stable melting recrystallization over a large area. The new equipment adopted a heating method based on RTP system, and is now under adjustment. (2) On the fabrication technology of light/carrier confinement structure, degradation of hydrogen-treated thin film Si solar cells by light irradiation was examined. As a result, since any characteristic degradation was not found even by long time light irradiation, the high quality of the cells was confirmed regardless of hydrogen-treatment. Fabrication of stable reproducible fine texture structure became possible by using fabrication technology of light confinement structure by texture treatment of cell surfaces. (3) On low-cost process technology, design by VEST process, estimation of cell characteristics by simulation, and characteristics of prototype cells were reported. 33 figs., 1 tab.

  1. Excess Dark Currents and Transients in Thin-Film CdTe Solar Cells: Implications for Cell Stability and Encapsulation of Scribe Lines and Cell Ends in Modules

    Energy Technology Data Exchange (ETDEWEB)

    McMahon, T. J.; Berniard, T. J.; Albin, D. S.; Demtsu, S. H.

    2005-02-01

    We have isolated a non-linear, metastable, shunt-path failure mechanism located at the CdS/CdTe cell edge. In such cases, most performance loss, usually erratic, can be associated with the shunt path. We studied these shunt paths using dark current-transients and infrared (ir) imaging and find only one shunt path per cell and only at the cell corner wall, even in badly degraded cells. The effect on diminishing the cell's efficiency far exceeds what would be expected from the cell's linear shunt-resistance value. We propose that current transients and ir imaging be used as a ''fingerprint'' of the source and magnitude of excess currents to evaluate the contribution of scribe-line edges and cell ends in thin-film module performance and degradation due to environmental stress. Protection afforded by, or contamination due to, new or currently used encapsulants can then be evaluated.

  2. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  3. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  4. Fuel cells

    Science.gov (United States)

    Hooie, D. T.; Harrington, B. C., III; Mayfield, M. J.; Parsons, E. L.

    1992-07-01

    The primary objective of DOE's Fossil Energy Fuel Cell program is to fund the development of key fuel cell technologies in a manner that maximizes private sector participation and in a way that will give contractors the opportunity for a competitive posture, early market entry, and long-term market growth. This summary includes an overview of the Fuel Cell program, an elementary explanation of how fuel cells operate, and a synopsis of the three major fuel cell technologies sponsored by the DOE/Fossil Energy Phosphoric Acid Fuel Cell program, the Molten Carbonate Fuel Cell program, and the Solid Oxide Fuel Cell program.

  5. Intermixing at the heterointerface between ZnS Zn S,O bilayer buffer and CuInS2 thin film solar cell absorber

    OpenAIRE

    Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H. W.; Fischer, Ch. H.; Lux Steiner, M.C.; Jung, Ch

    2006-01-01

    The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine has helped to achieve a similar efficiency as respective CdS buffered reference devices. After identifying the deposited Zn compound, as ZnS Zn S,O bi layer buffer in former in...

  6. Formation of a ZnS Zn S,O bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition

    OpenAIRE

    Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Allsop, N.; Lauermann, I.; Schock, H. W.; Lux Steiner, M.C

    2006-01-01

    The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine, has helped to achieve a similar efficiency as respective CdS buffered reference devices. In order to shed light on the differences of other Zn compound buffers deposited in con...

  7. Preparation of Carbon Nanotube/TiO2 Mesoporous Hybrid Photoanode with Iron Pyrite (FeS2) Thin Films Counter Electrodes for Dye-Sensitized Solar Cell

    OpenAIRE

    Bayram Kilic; Sunay Turkdogan; Aykut Astam; Oguz Can Ozer; Mansur Asgin; Hulya Cebeci; Deniz Urk; Selin Pravadili Mucur

    2016-01-01

    Multi-walled carbon nanotube (MWCNT)/TiO2 mesoporous networks can be employed as a new alternative photoanode in dye-sensitized solar cells (DSSCs). By using the MWCNT/TiO2 mesoporous as photoanodes in DSSC, we demonstrate that the MWCNT/TiO2 mesoporous photoanode is promising alternative to standard FTO/TiO2 mesoporous based DSSC due to larger specific surface area and high electrochemical activity. We also show that iron pyrite (FeS2) thin films can be used as an efficient counter electrode...

  8. Enhancing Light-Trapping Properties of Amorphous Si Thin-Film Solar Cells Containing High-Reflective Silver Conductors Fabricated Using a Nonvacuum Process

    Directory of Open Access Journals (Sweden)

    Jun-Chin Liu

    2014-01-01

    Full Text Available We proposed a low-cost and highly reflective liquid organic sheet silver conductor using back contact reflectors in amorphous silicon (a-Si single junction superstrate configuration thin-film solar cells produced using a nonvacuum screen printing process. A comparison of silver conductor samples with vacuum-system-sputtered silver samples indicated that the short-circuit current density (Jsc of sheet silver conductor cells was higher than 1.25 mA/cm2. Using external quantum efficiency measurements, the sheet silver conductor using back contact reflectors in cells was observed to effectively enhance the light-trapping ability in a long wavelength region (between 600 nm and 800 nm. Consequently, we achieved an optimal initial active area efficiency and module conversion efficiency of 9.02% and 6.55%, respectively, for the a-Si solar cells. The results indicated that the highly reflective sheet silver conductor back contact reflector layer prepared using a nonvacuum process is a suitable candidate for high-performance a-Si thin-film solar cells.

  9. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Chunfeng Lan

    2018-02-01

    Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

  10. Enhanced Charge Extraction of Li-Doped TiO₂ for Efficient Thermal-Evaporated Sb₂S₃ Thin Film Solar Cells.

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-02-28

    We provided a new method to improve the efficiency of Sb₂S₃ thin film solar cells. The TiO₂ electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb₂S₃ solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO₂ films. Compared with the undoped TiO₂, Li-doped mesoporous TiO₂ dramatically improved the photo-voltaic performance of the thermal-evaporated Sb₂S₃ thin film solar cells, with the average power conversion efficiency ( PCE ) increasing from 1.79% to 4.03%, as well as the improved open-voltage ( V oc ), short-circuit current ( J sc ) and fill factors. The best device based on Li-doped TiO₂ achieved a power conversion efficiency up to 4.42% as well as a V oc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb₂S₃ solar cells. This study showed that Li-doping on TiO₂ can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb₂S₃-based solar cells.

  11. Fabrication of high quality Cu2SnS3 thin film solar cell with 1.12% power conversion efficiency obtain by low cost environment friendly sol-gel technique

    Science.gov (United States)

    Chaudhari, J. J.; Joshi, U. S.

    2018-03-01

    Cu2SnS3 (CTS) is an emerging ternery chalcogenide material with great potential application in thin film solar cells. We present here high quality Cu2SnS3 thin films using a facile spin coating method. The as deposited films of CTS were sulphurized in a graphite box using tubular furnace at 520 °C for 60 min at the rate of 2.83 °C min-1 in argon atmosphere. X-ray diffraction (XRD) and Raman spectroscopy studies confirm tetragonal phase and absence of any secondary phase in sulphurized CTS thin films. X-ray photoelectron spectroscopy (XPS) demonstrates that Cu and Sn are in +1 and +4 oxidation state respectively. Surface morphology of CTS films were analyzed by field emission scanning electron microscope and atomic force microscope (AFM), which revealed a smooth surface with roughness (RMS) of 6.32 nm for sulphurized CTS film. Hall measurements confirmed p-type conductivity with hole concentartion of sulphurized CTS thin film is of 6.5348 × 1020 cm-3. UV-vis spectra revealed a direct energy band gap varies from 1.45 eV to 1.01 eV for as-deposited and sulphurized CTS thin film respectively. Such band gap values are optimum for semiconductor material as an absorber layer of thin film solar cell. The CTS thin film solar cell had following structure: SLG/FTO/ZnO/CTS/Al with short circuit current density of (Jsc) of 11.6 mA cm-2, open circuit voltage (Voc) of 0.276 V, active area of 0.16 cm2, fill factor (FF) of 35% and power conversion efficiency of 1.12% under AM 1.5 (100 mW cm-2) illumination in simulated standard test conditions.

  12. Protection of molybdenum and molybdenum - alloy thin films against low - temperature oxidation

    International Nuclear Information System (INIS)

    Schintlmeister, A.; Wilhartitz, P.

    2001-01-01

    Molybdenum is an interesting functional material for thin film applications like electrical connections in thin film transistor flat panel displays (TFT-FPD) or thin film solar cells (CIS). Despite its advantageous properties, the use of pure molybdenum has been restricted mainly because of its low stability against corrosion in moist air even at room temperature. In this paper it is described how thin films ( 2 . (author)

  13. Effects of substrate characteristics on the passivation performance of ALD-Al2O3 thin film for high-efficiency solar cells

    Science.gov (United States)

    Zongcun, Liang; Dianlei, Wang; Yanbin, Zhu

    2014-05-01

    Atom layer deposition (ALD)-Al2O3 thin films are considered effective passivation layers for p-type silicon surfaces. A lower surface recombination rate was obtained through optimizing the deposition parameters. The effects of some of the basic substrate characteristics including material type, bulk resistivity and surface morphology on the passivation performance of ALD-Al2O3 are evaluated in this paper. Surface recombination velocities of 7.8 cm/s and 6.5 cm/s were obtained for p-type and n-type wafers without emitters, respectively. Substrates with bulk resistivity ranging from 1.5 to 4 Ω·cm were all great for such passivation films, and a higher implied Voc of 660 mV on the 3 Ω·cm substrate was achieved. A minority carrier lifetime (MCL) of nearly 10 μs higher was obtained for cells with a polished back surface compared to those with a textured surface, which indicates the necessity of the polishing process for high-efficiency solar cells. For n-type semi-finished solar cells, a lower effective front surface recombination velocity of 31.8 cm/s was acquired, implying the great potential of (ALD)-Al2O3 thin films for high-efficiency n-type solar cells.

  14. Development of Combinatorial Pulsed Laser Deposition for Expedited Device Optimization in CdTe/CdS Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Ali Kadhim

    2016-01-01

    Full Text Available A combinatorial pulsed laser deposition system was developed by integrating a computer controlled scanning sample stage in order to rapidly screen processing conditions relevant to CdTe/CdS thin-film solar cells. Using this system, the thickness of the CdTe absorber layer is varied across a single sample from 1.5 μm to 0.75 μm. The effects of thickness on CdTe grain morphology, crystal orientation, and cell efficiency were investigated with respect to different postprocessing conditions. It is shown that the thinner CdTe layer of 0.75 μm obtained the best power conversion efficiency up to 5.3%. The results of this work shows the importance that CdTe grain size/morphology relative to CdTe thickness has on device performance and quantitatively exhibits what those values should be to obtain efficient thin-film CdTe/CdS solar cells fabricated with pulsed laser deposition. Further development of this combinatorial approach could enable high-throughput exploration and optimization of CdTe/CdS solar cells.

  15. Pyrolysis preparation of WO3 thin films using ammonium metatungstate DMF/water solution for efficient compact layers in planar perovskite solar cells

    Science.gov (United States)

    Jincheng, Zhang; Chengwu, Shi; Junjun, Chen; Chao, Ying; Ni, Wu; Mao, Wang

    2016-03-01

    The tungsten trioxide (WO3) thin films were firstly prepared by spin-coating-pyrolysis methods using the ammonium metatungstate ((NH4)6H2W12O40) DMF/water solution, and successfully applied as the efficient compact layers for the planar perovskite solar cells. The influence of the WO3 film thickness and the rinsing treatment of CH3NH3PbI3 thin film with isopropanol on the photovoltaic performance of the corresponding perovskite solar cells was systematically investigated. The results revealed that the perovskite solar cell with a 62 nm thick WO3 compact layer achieved a photoelectric conversion efficiency of 5.72%, with a short circuit photocurrent density of 17.39 mA/cm2, an open circuit voltage of 0.58 V and a fill factor of 0.57. The photoelectric conversion efficiency was improved from 5.72% to 7.04% by the isopropanol rinsing treatment. Project supported by the National Natural Science Foundation of China (Nos. 51472071, 512720616, 51072043), and the National Basic Research Program of China (No. 2011CBA00700).

  16. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  17. Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy

    OpenAIRE

    Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

    2017-01-01

    Abstract As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic?inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorganic halide (B-site: PbI2) powder targets to deposit repeated A/B bilayer films where the thic...

  18. Zeolite thin films: from computer chips to space stations.

    Science.gov (United States)

    Lew, Christopher M; Cai, Rui; Yan, Yushan

    2010-02-16

    antifouling coatings. When zeolites are incorporated into polymer thin films in the form of nanocrystals, we also show that the resultant composite membranes can significantly improve the performance of reverse osmosis membranes for sea water desalination and proton exchange membrane fuel cells. These diverse applications of zeolites have the potential to initiate new industries while revolutionizing existing ones with a potential economic impact that could extend into the hundreds of billions of dollars. We have licensed several of these inventions to companies with millions of dollars invested in their commercial development. We expect that other related technologies will be licensed in the near future.

  19. Growth optimization of Zn{sub x}Cd{sub 1−x}S thin films by radio frequency magnetron co-sputtering for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Hossain, M.S. [Department of Electrical, Electronics and System Engineering, Faculty of Engineering and Built Environment, The National University of Malaysia (UKM), 43600 Bangi, Selangor (Malaysia); Islam, M.A.; Huda, Q. [Solar Energy Research Institute, The National University Malaysia (UKM), 43600 Bangi, Selangor (Malaysia); Aliyu, M.M. [Department of Electrical, Electronics and System Engineering, Faculty of Engineering and Built Environment, The National University of Malaysia (UKM), 43600 Bangi, Selangor (Malaysia); Razykov, T. [Solar Energy Research Institute, The National University Malaysia (UKM), 43600 Bangi, Selangor (Malaysia); Alam, M.M.; AlOthman, Z.A. [Advanced Materials Research Chair, Chemistry Department, College of Sciences, King Saud University, Riyadh 11451 (Saudi Arabia); Sopian, K. [Solar Energy Research Institute, The National University Malaysia (UKM), 43600 Bangi, Selangor (Malaysia); Amin, N., E-mail: nowshad@eng.ukm.my [Department of Electrical, Electronics and System Engineering, Faculty of Engineering and Built Environment, The National University of Malaysia (UKM), 43600 Bangi, Selangor (Malaysia); Solar Energy Research Institute, The National University Malaysia (UKM), 43600 Bangi, Selangor (Malaysia); Advanced Materials Research Chair, Chemistry Department, College of Sciences, King Saud University, Riyadh 11451 (Saudi Arabia)

    2013-12-02

    Zinc cadmium sulfide (Zn{sub x}Cd{sub 1−x}S) thin films (0 ≤ x ≤ 1) were deposited by the radio frequency (RF) co-sputtering of cadmium sulfide (CdS) and zinc sulfide (ZnS). The RF powers of CdS and ZnS were varied to control the composition of the films, which was confirmed using energy dispersive X-ray analysis. The structural properties of the films were investigated using X-ray diffraction, which showed that the films have a hexagonal (wurtzite) structure with a strong preferential orientation along the (002) plane. The values of lattice constants ‘a’ and ‘c’ decreased as ‘x’ increased. The surface morphology, topology and optical properties were investigated using field emission scanning electron microscopy (FESEM), atomic force microscopy and ultraviolet spectrophotometry. The FESEM studies revealed an increase in grain size for zinc (Zn) contents up to x = 0.62, followed by a decrease in the grain size until ‘x’ reached 0.81, above which the films were amorphous. The optical band gaps of the films were obtained from optical absorption measurements and shifted to a higher energy as the content of ‘x’ increased. The presence of a small amount of zinc in CdS strongly influenced the optical band gap and transmittance of Zn{sub x}Cd{sub 1−x}S thin films. The electrical sheet resistance of the films was also found to be relatively high. Among the range of Zn{sub x}Cd{sub 1−x}S compositions tested, the samples with a Zn content of 0.17 to 0.43 showed a better film quality, making them suitable as the window layer in Zn{sub x}Cd{sub 1−x}S/CdTe thin film solar cells. - Highlights: • Zn{sub x}Cd{sub 1−x}S thin films synthesized by incorporating Zn into CdS. • Zn incorporation in CdS influences structural and optical properties. • Composition of Zn(x) in the range of 0.17 to 0.43 showed better film quality.

  20. Formation of a ZnS/Zn(S,O) bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition

    Science.gov (United States)

    Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; Sáez-Araoz, R.; Allsop, N.; Lauermann, I.; Schock, H.-W.; Lux-Steiner, M. C.

    2006-06-01

    The application of Zn compounds as buffer layers was recently extended to wide-gap CuInS2 (CIS) based thin film solar cells. Using an alternative chemical deposition route for the buffer preparation aiming at the deposition of a single-layer, nominal ZnS buffer without the need for any toxic reactants such as hydrazine has helped us to achieve a similar efficiency as respective CdS-buffered reference devices. In order to shed light on the differences of other Zn-compound buffers deposited in conventional chemical baths [chemical bath deposition (CBD)] compared to the buffer layers deposited by this alternative CBD process, the composition of the deposited buffers was investigated by x-ray excited Auger electron and x-ray photoelectron spectroscopy to potentially clarify their superiority in terms of device performance. We have found that in the early stages of this alternative CBD process a thin ZnS layer is formed on the CIS, whereas in the second half of the CBD the growth rate is greatly increased and Zn(S,O) with a ZnS/(ZnS+ZnO) ratio of ~80% is deposited. Thus, a ZnS/Zn(S,O) bilayer buffer is deposited on the CIS thin film solar cell absorbers by the alternative chemical deposition route used in this investigation. No major changes of these findings after a postannealing of the buffer/CIS sample series and recharacterization could be identified.