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Sample records for thin-film edge field

  1. Knife-edge thin film field emission cathodes

    International Nuclear Information System (INIS)

    Lee, B.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Cathodes made of thin-film field emission arrays (FEA) have the advantages of high current density, pulsed emission, and low bias voltage operation. The authors have developed a technology to fabricate knife-edge field emission cathodes on (110) silicon wafers. The emitter geometry is optimized for efficient modulation at high frequency. Cathode fabrication progress and preliminary analysis of their applications in RF power sources are presented

  2. Field ion microscope studies on thin films

    International Nuclear Information System (INIS)

    Cavaleru, A.; Scortaru, A.

    1976-01-01

    A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)

  3. Edge states and integer quantum Hall effect in topological insulator thin films.

    Science.gov (United States)

    Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing

    2015-08-25

    The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.

  4. Resistance switching induced by electric fields in manganite thin films

    International Nuclear Information System (INIS)

    Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P

    2007-01-01

    In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results

  5. Ferrofluid thin films as optical gaussmeters proposed for field and ...

    Indian Academy of Sciences (India)

    Department of Physics, Cochin University of Science and Technology, Cochin 682 022, India ... Magnetic field induced laser transmission through these ... An optical gaussmeter can be formulated with these ferrofluid thin films with the help of an LDR, and a laser (a diode laser or a cheaper torch laser which gives a stream ...

  6. Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

    Science.gov (United States)

    Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

    2018-04-25

    In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

  7. Edge-closed laminated structures for thin-film heads

    Science.gov (United States)

    Herman, D. A.; Argyle, B. E.; Lee, H.-P.; Trouilloud, P. O.; Petek, B.

    1991-04-01

    Magnetic film laminations containing nonmagnetic spacers have been explored with the hope of eliminating domain walls to diminish Barkhausen instabilities. Such laminates have limitations however, which originate in their ``edge-curling walls'' (ECWs).1 We have developed a new structure, free of ECWs, in which flux closure at opposing edges occurs via edge-shorting material added to circulate the easy-axis flux of the flat layers. We show experimentally with Kerr-effect imaging that (1) this edge-closed laminated (ECL) structure can support an (ECW-free) ``easy-axis'' (EA) magnetic state under conditions as modeled recently by Slonczewski,2 and (2) that this EA state is quite robust in the face of imperfect structure fabrication. This is, if the imperfections are not too severe, the resultant states depart minimally from the pure EA state and conduct hard-axis-driven flux nearly as well. Flat-film ECL elements in diamond, stripe, and recording-head-yoke shapes, plus experimental heads with ECL top yokes, were fabricated. Our domain images verify some key predictions from Slonczewski's static equilibrium modeling; additional results taken in applied magnetic fields extend the micromagnetic understanding. The sketch shows a typical domain pattem for a yoke-shaped element. The most stable state in the open portion of the yoke is the single domain shown. This remanent pattern was stable in the face of (slowly varying) external fields up to the 150 Oe that could be applied. The pole tip region contained a few 180° walls as indicated. On close inspection, these walls were seen to end in vestigial, nontouching, closure domains as predicted by the model when only partial flux closure occurs via the edge shorting material. The wall spacing in the tip varied somewhat following saturation-demagnetization cycles. The dynamic stability of this EA state was investigated in the experimental heads having ECL top yokes. The pseudodynamic LAMOM technique3 was applied using ``write

  8. Asymptotic behavior of local dipolar fields in thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bowden, G.J., E-mail: gjb@phys.soton.ac.uk [School of Physics and Astronomy, University of Southampton, SO17 1BJ (United Kingdom); Stenning, G.B.G., E-mail: Gerrit.vanderlaan@diamond.ac.uk [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Laan, G. van der, E-mail: gavin.stenning@stfc.ac.uk [ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Didcot OX11 0QX (United Kingdom)

    2016-10-15

    A simple method, based on layer by layer direct summation, is used to determine the local dipolar fields in uniformly magnetized thin films. The results show that the dipolar constants converge ~1/m where the number of spins in a square film is given by (2m+1){sup 2}. Dipolar field results for sc, bcc, fcc, and hexagonal lattices are presented and discussed. The results can be used to calculate local dipolar fields in films with either ferromagnetic, antiferromagnetic, spiral, exponential decay behavior, provided the magnetic order only changes normal to the film. Differences between the atomistic (local fields) and macroscopic fields (Maxwellian) are also examined. For the latter, the macro B-field inside the film is uniform and falls to zero sharply outside, in accord with Maxwell boundary conditions. In contrast, the local field for the atomistic point dipole model is highly non-linear inside and falls to zero at about three lattice spacing outside the film. Finally, it is argued that the continuum field B (used by the micromagnetic community) and the local field B{sub loc}(r) (used by the FMR community) will lead to differing values for the overall demagnetization energy. - Highlights: • Point-dipolar fields in uniformly magnetized thin films are characterized by just three numbers. • Maxwell's boundary condition is partially violated in the point-dipole approximation. • Asymptotic values of point dipolar fields in circular monolayers scale as π/r.

  9. High magnetic field properties of Fe-pnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kurth, Fritz

    2015-11-20

    The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for

  10. Finite element method calculations of GMI in thin films and sandwiched structures: Size and edge effects

    International Nuclear Information System (INIS)

    Garcia-Arribas, A.; Barandiaran, J.M.; Cos, D. de

    2008-01-01

    The impedance values of magnetic thin films and magnetic/conductor/magnetic sandwiched structures with different widths are computed using the finite element method (FEM). The giant magneto-impedance (GMI) is calculated from the difference of the impedance values obtained with high and low permeability of the magnetic material. The results depend considerably on the width of the sample, demonstrating that edge effects are decisive for the GMI performance. It is shown that, besides the usual skin effect that is responsible for GMI, an 'unexpected' increase of the current density takes place at the lateral edge of the sample. In magnetic thin films this effect is dominant when the permeability is low. In the trilayers, it is combined with the lack of shielding of the central conductor at the edge. The resulting effects on GMI are shown to be large for both kinds of samples. The conclusions of this study are of great importance for the successful design of miniaturized GMI devices

  11. Optical constants and band edge of amorphous zinc oxide thin films

    International Nuclear Information System (INIS)

    Khoshman, Jebreel M.; Kordesch, Martin E.

    2007-01-01

    The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

  12. Red photoluminescence and band edge shift from ZnO thin films

    International Nuclear Information System (INIS)

    Marotti, Ricardo E.; Badan, Juan A.; Quagliata, Eduardo; Dalchiele, Enrique A.

    2007-01-01

    The red photoluminescence (PL) band (peaked between 610 and 640 nm) from electrochemically deposited ZnO thin films is studied. The absorption coefficient is obtained from diffuse reflectance measurements. The absorption band edge depends on deposition conditions. The PL peak follows the shift of the band edge. A similar correlation appears when cooling down to 20 K. This suggests that PL is due to a transition from an intrinsic shallow state to an intrinsic deep state. Comparing against ZnO samples showing green PL, the shallow nature of the state is confirmed

  13. Characterization of Alq3 thin films by a near-field microwave microprobe.

    Science.gov (United States)

    Hovsepyan, Artur; Lee, Huneung; Sargsyan, Tigran; Melikyan, Harutyun; Yoon, Youngwoon; Babajanyan, Arsen; Friedman, Barry; Lee, Kiejin

    2008-09-01

    We observed tris-8-hydroxyquinoline aluminum (Alq3) thin films dependence on substrate heating temperatures by using a near-field microwave microprobe (NFMM) and by optical absorption at wavelengths between 200 and 900 nm. The changes of absorption intensity at different substrate heating temperatures are correlated to the changes in the sheet resistance of Alq3 thin films.

  14. Electric field tuning of phase separation in manganite thin films

    KAUST Repository

    Lourembam, James; Wu, Jianchun; Ding, Junfeng; Lin, Weinan; Wu, Tao

    2014-01-01

    In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

  15. Electric field tuning of phase separation in manganite thin films

    KAUST Repository

    Lourembam, James

    2014-01-29

    In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

  16. Highly Efficient Thin-Film Transistor via Cross-Linking of 1T Edge Functional 2H Molybdenum Disulfides.

    Science.gov (United States)

    Lee, Hanleem; Bak, Sora; An, Sung-Jin; Kim, Jung Ho; Yun, Eunbhin; Kim, Meeree; Seo, Sohyeon; Jeong, Mun Seok; Lee, Hyoyoung

    2017-12-26

    Thin-film transistors (TFTs) have received great attention for their use in lightweight, large area, and wearable devices. However, low crystalline materials and inhomogeneous film formation limit the realization of high-quality electrical properties for channels in commercial TFTs, especially for flexible electronics. Here, we report a field-effect TFT fabricated via cross-linking of edge-1T basal-2H MoS 2 sheets that are prepared by edge functional exfoliation of bulk MoS 2 with soft organic exfoliation reagents. For edge functional exfoliation, the electrophilic 4-carboxy-benzenediazonium used as the soft organic reagent attacks the nucleophilic thiolates exposed at the edge of the bulk MoS 2 with the help of an amine catalyst, resulting in 1T edge-functional HOOC-benzene-2H basal MoS 2 nanosheets (e-MoS 2 ). The cross-linking via hydrogen bonding of the negatively charged HOOC of the e-MoS 2 sheets with the help of a cationic polymer, polydiallyldimethylammonium chloride, results in a good film formation for a channel of the solution processing TFT. The TFT exhibits an extremely high mobility of 170 cm 2 /(V s) at 1 V (on/off ratio of 10 6 ) on SiO 2 /Si substrate and also a high mobility of 36.34 cm 2 /(V s) (on/off ratio of 10 3 ) on PDMS/PET substrate.

  17. Josephson edge junctions on YBa2Cu3O7 thin films prepared with Br-ethanol etching

    International Nuclear Information System (INIS)

    Faley, M.I.; Poppe, U.; Daehne, U.; Goncharov, Yu.G.; Klein, N.; Urban, K.; Soltner, H.

    1993-01-01

    To produce damage-free edges is one of the main problems in the preparation of the Josephson edge-type junctions and interconnects in multilayer structures including high temperature superconductors. The commonly used ion beam etching has the disadvantages of the risk of contamination by redeposited material and structural damage to the surface of the edge. Vasquez et al and Gurvitch et al introduced a nonaqueous Br-ethanol etching for the preparation of clean surfaces of YBa 2 Cu 3 O 7 single crystals and thin films. We have developed a procedure of deep-UV-photolithography combined with nonaqueous Br-ethanol etching for the preparation of the Josephson edge-type junctions. Here we present the improvement of this method and report further results on the study of the electron transport properties of Josephson junctions with the edges of YBa 2 Cu 3 O 7 thin films produced by this technique. (orig.)

  18. Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

    Science.gov (United States)

    Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

    2009-11-09

    Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

  19. Lattice positions of Sn in Cu2ZnSnS4 nanoparticles and thin films studied by synchrotron X-ray absorption near edge structure analysis

    Science.gov (United States)

    Zillner, E.; Paul, A.; Jutimoosik, J.; Chandarak, S.; Monnor, T.; Rujirawat, S.; Yimnirun, R.; Lin, X. Z.; Ennaoui, A.; Dittrich, Th.; Lux-Steiner, M.

    2013-06-01

    Lattice positions of Sn in kesterite Cu2ZnSnS4 and Cu2SnS3 nanoparticles and thin films were investigated by XANES (x-ray absorption near edge structure) analysis at the S K-edge. XANES spectra were analyzed by comparison with simulations taking into account anti-site defects and vacancies. Annealing of Cu2ZnSnS4 nanoparticle thin films led to a decrease of Sn at its native and defect sites. The results show that XANES analysis at the S K-edge is a sensitive tool for the investigation of defect sites, being critical in kesterite thin film solar cells.

  20. Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

    Science.gov (United States)

    Kagan; Mitzi; Dimitrakopoulos

    1999-10-29

    Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

  1. Multiple Scattering Approach to Polarization Dependence of F K-Edge XANES Spectra for Highly Oriented Polytetrafluoroethylene (PTFE) Thin Film

    International Nuclear Information System (INIS)

    Nagamatsu, S.; Ono, M.; Kera, S.; Okudaira, K. K.; Fujikawa, T.; Ueno, N.

    2007-01-01

    The polarization dependence of F K-edge X-ray absorption near edge structure (XANES) spectra of highly-oriented thin-film of polytetrafluoroethylene (PTFE) has been analyzed by using multiple scattering theory. The spectra show clear polarization dependence due to the highly-oriented structure. The multiple scattering calculations reflects a local structure around an absorbing atom. The calculated results obtained by considering intermolecular-interactions are in good agreement with the observed polarization-dependence. We have also analyzed structural models of the radiation damaged PTFE films

  2. Magnetic-field induced semimetal in topological crystalline insulator thin films

    International Nuclear Information System (INIS)

    Ezawa, Motohiko

    2015-01-01

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material

  3. Magnetic-field induced semimetal in topological crystalline insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ezawa, Motohiko, E-mail: ezawa@ap.t.u-tokyo.ac.jp

    2015-06-19

    We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material.

  4. Thin Film Structure of Tetraceno(2,3-B)thiophene Characterized By Grazing Incidence X-Ray Scattering And Near-Edge X-Ray Absorption Fine Structure Analysis

    International Nuclear Information System (INIS)

    Yuan, Q.; Mannsfeld, S.C.B.; Tang, M.L.; Toney, M.F.; Luening, J.; Bao, Z.A.

    2008-01-01

    Understanding the structure-property relationship for organic semiconductors is crucial in rational molecular design and organic thin film process control. Charge carrier transport in organic field-effect transistors predominantly occurs in a few semiconductor layers close to the interface in contact with the dielectric layer, and the transport properties depend sensitively on the precise molecular packing. Therefore, a better understanding of the impact of molecular packing and thin film morphology in the first few monolayers above the dielectric layer on charge transport is needed to improve the transistor performance. In this Article, we show that the detailed molecular packing in thin organic semiconductor films can be solved through a combination of grazing incidence X-ray diffraction (GIXD), near-edge X-ray absorption spectra fine structure (NEXAFS) spectroscopy, energy minimization packing calculations, and structure refinement of the diffraction data. We solve the thin film structure for 2 and 20 nm thick films of tetraceno(2,3-b)thiophene and detect only a single phase for these thicknesses. The GIXD yields accurate unit cell dimensions, while the precise molecular arrangement in the unit cell was found from the energy minimization and structure refinement; the NEXAFS yields a consistent molecular tilt. For the 20 nm film, the unit cell is triclinic with a = 5.96 A, b = 7.71 A, c = 15.16 A, alpha = 97.30 degrees, beta = 95.63 degrees, gamma = 90 degrees; there are two molecules per unit cell with herringbone packing (49-59 degree angle) and tilted about 7 degrees from the substrate normal. The thin film structure is significantly different from the bulk single-crystal structure, indicating the importance of characterizing thin film to correlate with thin film device performance. The results are compared to the corresponding data for the chemically similar and widely used pentacene. Possible effects of the observed thin film structure and morphology on

  5. Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

    International Nuclear Information System (INIS)

    Zhao Xiaofeng; Wen Dianzhong; Zhuang Cuicui; Cao Jingya; Wang Zhiqiang

    2013-01-01

    A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed. The magnetic field sensors are fabricated on 〈100〉 orientation high resistivity (ρ > 500 Ω·cm) silicon substrates by using CMOS technology, which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers. The experimental results show that when V DS = 5.0 V, the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length—width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 78 mV/T, 55 mV/T and 34 mV/T, respectively. Under the same conditions, the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers. (semiconductor technology)

  6. The phase diagrams of a ferromagnetic thin film in a random magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Zaim, N.; Zaim, A., E-mail: ah_zaim@yahoo.fr; Kerouad, M., E-mail: m.kerouad@fs-umi.ac.ma

    2016-10-07

    In this paper, the magnetic properties and the phase diagrams of a ferromagnetic thin film with a thickness N in a random magnetic field (RMF) are investigated by using the Monte Carlo simulation technique based on the Metropolis algorithm. The effects of the RMF and the surface exchange interaction on the critical behavior are studied. A variety of multicritical points such as tricritical points, isolated critical points, and triple points are obtained. It is also found that the double reentrant phenomenon can appear for appropriate values of the system parameters. - Highlights: • Phase diagrams of a ferromagnetic thin film are examined by the Monte Carlo simulation. • The effect of the random magnetic field on the magnetic properties is studied. • Different types of the phase diagrams are obtained. • The dependence of the magnetization and susceptibility on the temperature are investigated.

  7. Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

    Science.gov (United States)

    Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

    2016-08-01

    We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

  8. Probing the local microwave properties of superconducting thin films by a scanning microwave near-field microscope

    CERN Document Server

    Wu, L Y; Wang, K L; Jiang, T; Kang, L; Yang, S Z; Wu, P H

    2002-01-01

    In this paper, we present our approach to probe the local microwave properties of superconducting thin films by using the microwave near-field scanning technique. We have employed a coaxial cavity together with a niobium tip as the probe and established a scanning sample stage cooled by liquid nitrogen to study thin film devices at low temperature in our scanning microwave near-field microscope. Nondestructive images have been obtained on the inhomogeneity of the YBaCuO superconducting thin films at microwave frequency. We believe that these results would be helpful in evaluating the microwave performance of the devices.

  9. Electric-field induced spin accumulation in the Landau level states of topological insulator thin films

    Science.gov (United States)

    Siu, Zhuo Bin; Chowdhury, Debashree; Basu, Banasri; Jalil, Mansoor B. A.

    2017-08-01

    A topological insulator (TI) thin film differs from the more typically studied thick TI system in that the former has both a top and a bottom surface where the states localized at both surfaces can couple to one other across the finite thickness. An out-of-plane magnetic field leads to the formation of discrete Landau level states in the system, whereas an in-plane magnetization breaks the angular momentum symmetry of the system. In this work, we study the spin accumulation induced by the application of an in-plane electric field to the TI thin film system where the Landau level states and inter-surface coupling are simultaneously present. We show, via Kubo formula calculations, that the in-plane spin accumulation perpendicular to the magnetization due to the electric field vanishes for a TI thin film with symmetric top and bottom surfaces. A finite in-plane spin accumulation perpendicular to both the electric field and magnetization emerges upon applying either a differential magnetization coupling or a potential difference between the two film surfaces. This spin accumulation results from the breaking of the antisymmetry of the spin accumulation around the k-space equal-energy contours.

  10. A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing

    Energy Technology Data Exchange (ETDEWEB)

    St George, Tiffany [Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Department of Science, United States Coast Guard Academy, 27 Mohegan Ave., New London, CT 06320 (United States); Vlahos, Penny, E-mail: penny.vlahos@uconn.ed [Department of Chemistry, University of Connecticut, 55 Eagleville Road, Storrs, CT 06269 (United States); Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Harner, Tom [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada); Helm, Paul [Environmental Monitoring and Reporting Branch, Ontario Ministry of the Environment, 125 Resources Rd, Toronto, Ontario M9P 3V6 (Canada); Wilford, Bryony [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada)

    2011-02-15

    Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K{sub EVA-W} partition coefficients correlate well (r{sup 2} = 0.87) with Log K{sub OW} values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K{sub EVA-W} = 1.04 Log K{sub OW} + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. - Research highlights: Calibration and field testing of a thin-film passive sampler in marine systems. Ethylene vinyl acetate (EVA) is effective for a wide spectrum of organic compounds. EVA performs with high precision and reproducibility. EVA is effective in marine systems at environmentally relevant concentrations. EVA is recommended as a multi-media fugacity meter for environmental applications. - An ethylene vinyl acetate (EVA), thin-film passive sampler for the detection of organic compounds in marine environments is calibrated and field tested.

  11. Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

    Science.gov (United States)

    Guiffard, B.; Seveno, R.

    2015-01-01

    In this study, we report the magnetically induced electric field E 3 in Pb(Zr0.57Ti0.43)O3 (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B ac at 45 kHz) and static magnetic induction ( B dc) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B dc——is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B ac and B dc induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E 3 versus B dc could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of under B dc = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems.

  12. Spatially Multiplexed Micro-Spectrophotometry in Bright Field Mode for Thin Film Characterization

    Directory of Open Access Journals (Sweden)

    Valerio Pini

    2016-06-01

    Full Text Available Thickness characterization of thin films is of primary importance in a variety of nanotechnology applications, either in the semiconductor industry, quality control in nanofabrication processes or engineering of nanoelectromechanical systems (NEMS because small thickness variability can strongly compromise the device performance. Here, we present an alternative optical method in bright field mode called Spatially Multiplexed Micro-Spectrophotometry that allows rapid and non-destructive characterization of thin films over areas of mm2 and with 1 μm of lateral resolution. We demonstrate an accuracy of 0.1% in the thickness characterization through measurements performed on four microcantilevers that expand an area of 1.8 mm2 in one minute of analysis time. The measured thickness variation in the range of few tens of nm translates into a mechanical variability that produces an error of up to 2% in the response of the studied devices when they are used to measure surface stress variations.

  13. Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Ehsani, M.H., E-mail: Ehsani@semnan.ac.ir [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Mehrabad, M. Jalali [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Kameli, P. [Department of Physics, Isfahan University of technology, Isfahan 8415683111 (Iran, Islamic Republic of)

    2016-11-01

    In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films. - Graphical abstract: Simulation results of the cobalt particles tracing sputtered from the source to substrate with an external magnetic field. Convergence of the particles flux (left) and also the spiral motion of the cobalt particles (right) increase dramatically as they approach the substrate and NdFe35 magnet. - Highlights: • The external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. • Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. • The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. • To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field

  14. Modeling on the cathodoluminescence properties of the thin film phosphors for field emission flat panel displays

    Science.gov (United States)

    Cho, Kyu-Gong

    2000-12-01

    utilized to optimize the thin film phosphor properties for the application of field emission flat panel displays.

  15. Influence of Magnetic Field on Electric Charge Transport in Holomiun Thin Films at Low Temperatures

    Directory of Open Access Journals (Sweden)

    Jan Dudas

    2005-01-01

    Full Text Available Holmium thin films were prepared by evaporation in ultrahigh vacuum (UHV and high precision electrical resistance measurements were performed on them as well as on holomium bulk sample in the wide temperature range from 4,2 K up to the room temperature. Electric charge transport is profoundly influenced by the magnetic structure at low temperatures and a "knee-like" resistance anomaly was observed near the transportation from paramagnetic state to basal-plane spiral structure in bulk with the Neel temperature TN=128,9 K and below ~ 122 K in thin Ho films in a thickness range from 98 nm to 215 nm. Unexpected resistance minimum at ~ 9 K and a slope´s charge of the R vs. T curve near ~ 170 K was observed in 215 nm thin film. Application of magnetic field parallel to the substrate and thin film plane for temperatures below ~ 150 K caused the decrease of resistence value with increasing magnetic flux density. Increasing suppression of the TN value up to ~ 5 K with increasing flux density value up to 5 T was observed in Ho films. 

  16. Electric Field Structures in Thin Films: Formation and Properties

    DEFF Research Database (Denmark)

    Cassidy, Andrew; Plekan, Oksana; Balog, Richard

    2014-01-01

    A newly discovered class of molecular materials, so-called “spontelectrics”, display spontaneous electric fields. Here we show that the novel properties of spontelectrics can be used to create composite spontelectrics, illustrating how electric fields in solid films may be structured on the nanoscale...... by combining layers of different spontelectric materials. This is demonstrated using the spontelectric materials nitrous oxide, toluene, isoprene, isopentane, and CF2Cl2. These yield a variety of tailored electric field structures, with individual layers harboring fields between 107 and 108 V/m. Fields may...

  17. Evaluation of bulk and surfaces absorption edge energy of sol-gel-dip-coating SnO2 thin films

    Directory of Open Access Journals (Sweden)

    Emerson Aparecido Floriano

    2010-12-01

    Full Text Available The absorption edge and the bandgap transition of sol-gel-dip-coating SnO2 thin films, deposited on quartz substrates, are evaluated from optical absorption data and temperature dependent photoconductivity spectra. Structural properties of these films help the interpretation of bandgap transition nature, since the obtained nanosized dimensions of crystallites are determinant on dominant growth direction and, thus, absorption energy. Electronic properties of the bulk and (110 and (101 surfaces are also presented, calculated by means of density functional theory applied to periodic calculations at B3LYP hybrid functional level. Experimentally obtained absorption edge is compared to the calculated energy band diagrams of bulk and (110 and (101 surfaces. The overall calculated electronic properties in conjunction with structural and electro-optical experimental data suggest that the nature of the bandgap transition is related to a combined effect of bulk and (101 surface, which presents direct bandgap transition.

  18. Electric-field-induced monoclinic phase in (Ba,Sr)TiO3 thin film

    International Nuclear Information System (INIS)

    Anokhin, A. S.; Yuzyuk, Yu. I.; Golovko, Yu. I.; Mukhortov, V. M.; El Marssi, M.

    2011-01-01

    We have studied electric-field-induced symmetry lowering in the tetragonal (001)-oriented heteroepitaxial (Ba 0.8 Sr 0.2 )TiO 3 thin film deposited on (001)MgO substrate. Polarized micro-Raman spectra were recorded from the film area in between two planar electrodes deposited on the film surface. Presence of c domains with polarization normal to the substrate was confirmed from polarized Raman study under zero field, while splitting and hardening of the E(TO) soft mode and polarization changes in the Raman spectra suggest monoclinic symmetry under external electric field.

  19. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  20. An analytical expression of electric potential and field of organic thin film transistors

    International Nuclear Information System (INIS)

    Pankalla, S; Glesner, M

    2012-01-01

    The two-dimensional electric potential and field of an organic thin-film transistor (OTFT) is derived by conformal mapping using the Schwarz-Christoffel-transformation of the Poisson equation. In this paper we compare this analytical closed-form solution to field simulation results from Silvaco TCAD. Inter alia the potential close to the surface is calculated and we found excellent accordance to the numerical simulations and thus proofed its usability for charge transport calculations. Thus, it is used for calculation of the drain-source-current in the channel.

  1. Diffraction of stochastic electromagnetic fields by a hole in a thin film with real optical properties

    Science.gov (United States)

    Dorofeyev, Illarion

    2008-08-01

    The classical Kirchhoff theory of diffraction is extended to the case of real optical properties of a screen and its finite thickness. A spectral power density of diffracted electromagnetic fields by a hole in a thin film with real optical properties was calculated. The problem was solved by use of the vector Green theorems and related Green function of the boundary value problem. A spectral and spatial selectivity of the considered system was demonstrated. Diffracted patterns were calculated for the coherent and incoherent incident fields in case of holes array in a screen of perfect conductivity.

  2. Diffraction of stochastic electromagnetic fields by a hole in a thin film with real optical properties

    International Nuclear Information System (INIS)

    Dorofeyev, Illarion

    2008-01-01

    The classical Kirchhoff theory of diffraction is extended to the case of real optical properties of a screen and its finite thickness. A spectral power density of diffracted electromagnetic fields by a hole in a thin film with real optical properties was calculated. The problem was solved by use of the vector Green theorems and related Green function of the boundary value problem. A spectral and spatial selectivity of the considered system was demonstrated. Diffracted patterns were calculated for the coherent and incoherent incident fields in case of holes array in a screen of perfect conductivity

  3. Effects of small magnetic fields on the critical current of thin films

    International Nuclear Information System (INIS)

    Passos, Wagner de Assis Cangussu; Lisboa-Filho, Paulo Noronha; Ortiz, Wilson Aires; Kang, W.N.; Choi, Eun-Mi; Hyeong-Jin, Kim; Lee, Sung-Ik Lee

    2002-01-01

    Full text: Magnetic fields applied perpendicularly to superconducting thin films may produce dendritic patterns, where penetrated and Meissner regions coexist, as observed in Nb, YBaCuO and MgB 2 [1]. A temperature-dependent limiting-field, Hd(T), separates the dendritic mode from a critical-state-like penetration regime. Due to large demagnetizing factors in the perpendicular geometry, small fields may be enough to drive portions of the sample into the mixed state. Lack of symmetry and local defects might then permeate the dendritic mode. Hd(T) is related[2] to the bulk lower critical field, Hc1, which depends on the in-plane current density, J. Not surprisingly, Hd is depressed by J[3]. The dendritic mode can be detected by the AC-susceptibility: penetrated fingers act as intergranular material, and the imaginary component peaks at Tc-inter(J). Films of 0.2-0.4 microns, with millimeter lateral sizes, develop dendrites when submitted to Earth's field[2], what limits the critical current, J c . This contribution studies how J c is affected by field-induced granularity in thin films. 1. C. A. Duran et al., PRB 52 (1995) 75; P. Leiderer et al., PRL. 71 (1993) 2646; T.H. Johansen et al., Supercond. Sci. Technol. 14 (2001) 1. 2. W. A. Ortiz et al., Physica C 361 (2001) 267. 3. A. V. Bobyl et al., cond-mat/0201260, submitted to APL

  4. Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

    Energy Technology Data Exchange (ETDEWEB)

    Guiffard, B.; Seveno, R. [Universite de Nantes, Lunam Universite, IETR UMR CNRS 6164, Nantes (France)

    2014-07-10

    In this study, we report the magnetically induced electric field E{sub 3} in Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3} (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B{sub ac} at 45 kHz) and static magnetic induction (B{sub dc}) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B{sub dc} - Δ vertical stroke E{sub 3} vertical stroke ΔB{sub dc} - is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B{sub ac} and B{sub dc} induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E{sub 3} versus B{sub dc} could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of α = vertical stroke E{sub 3} vertical stroke /B{sub ac} = 3.55 V/cm Oe under B{sub dc} = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems. (orig.)

  5. Light field intensification induced by nanoinclusions in optical thin-films

    International Nuclear Information System (INIS)

    Zhu Zhiwu; Cheng Xiangai; Huang Liangjin; Liu Zejin

    2012-01-01

    Inclusions even in tens of nanometers scale (nanoinclusion) can cause electric field intensifications locally in an optical thin-film when irradiated by laser. It was modeled by using finite element analysis, and the dependences of local light field on complex refractive index, diameter and embedded depth of the nanoinclusion were simulated. In addition, the average light intensity inside the nanodefect was calculated as well as the energy deposition rate. The modeling results show that extinction coefficient of a nanoinclusion has more significant effects on local light field than real part of the refractive index. A light intensification as large as 4× can occur owing to a metallic nanoinclusion and the peaks of electric field distribution locating on the boundary of the particulate. Energy deposition rate, reflecting the behavior of laser induced damage to the thin-film, is found to have the highest value at a certain extinction coefficient, instead of the state that, for a defect, a higher extinction coefficient causes a higher speed of laser absorption. And when this coefficient is relatively small, the energy deposition rate grows linearly with it. Finally, regarding high absorptive nanoinclusions, the larger can induce stronger laser intensification and higher average of energy deposition rate, whereas no significant difference is made by low absorptive nanoinclusions of different sizes.

  6. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

  7. Thin-Film Magnetic-Field-Response Fluid-Level Sensor for Non-Viscous Fluids

    Science.gov (United States)

    Woodard, Stanley E.; Shams, Qamar A.; Fox, Robert L.; Taylor, Bryant D.

    2008-01-01

    An innovative method has been developed for acquiring fluid-level measurements. This method eliminates the need for the fluid-level sensor to have a physical connection to a power source or to data acquisition equipment. The complete system consists of a lightweight, thin-film magnetic-field-response fluid-level sensor (see Figure 1) and a magnetic field response recorder that was described in Magnetic-Field-Response Measurement-Acquisition System (LAR-16908-1), NASA Tech Briefs, Vol. 30, No. 6 (June 2006), page 28. The sensor circuit is a capacitor connected to an inductor. The response recorder powers the sensor using a series of oscillating magnetic fields. Once electrically active, the sensor responds with its own harmonic magnetic field. The sensor will oscillate at its resonant electrical frequency, which is dependent upon the capacitance and inductance values of the circuit.

  8. Influence Of The Switching field On The Magnetization Process Thin Film Magneto optic

    International Nuclear Information System (INIS)

    Atmono, Tri Mardji

    1996-01-01

    The investigation of influence of switching field on the magnetic reversal process of bilayer Fe Tb/FeTbCo has been done. Thin film has been produced by sputtering method using mosaic target placed as cathode. The experiment shows that the interface wall between two layers is created due to the shifting of the switching field from the coercive force of the single layer. At the temperature of 26 o C, the special magnetization process accurst because the two layers have the same value of switching field : For the range of the magnetic field -3.8 kg o C o C. This mean that the compensation point lies in this temperature range

  9. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

    International Nuclear Information System (INIS)

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  10. Characterization of novel powder and thin film RGB phosphors for field emissions display application

    International Nuclear Information System (INIS)

    Chakhovskoi, A.G.; Hunt, C.E.

    1996-01-01

    The spectral response, brightness and outgassing characteristics of new, low-voltage phosphors for application in field-emission flat-panel displays, are presented. The tested phosphor materials include combustion synthesized powders and thin films prepared by RF-diode or magnetron sputtering, laser ablation and molecular beam epitaxy. These cathodoluminescent materials are tested with e-beam excitation at currents up to 50 μA within the 200-2000V (e.g. open-quotes low-voltageclose quotes) and 3-8 kV (e.g. open-quotes medium voltageclose quotes) ranges. The spectral coordinates are compared to commercial low-voltage P22 phosphors. Phosphor outgassing, as a function of time is measured with a residual gas analyzer at fixed 50 μA beam current in the low-voltage range. We find that levels of outgassing stabilize to low values after the first few hours of excitation. The desorption rates measured for powder phosphor layers with different thickness are compared to desorption from thin films

  11. Low-field vortex dynamics in various high-Tc thin films

    Indian Academy of Sciences (India)

    Abstract. We present a novel ac susceptibility technique for the study of vortex creep in supercon- ducting thin films. With this technique we study the dynamics of dilute vortices in c-axis oriented. Y-123, Hg-1212, and Tl-1212 thin films, as well as a-axis oriented Hg-1212 thin films. Results on the Hg-1212 and Tl-1212 thin ...

  12. Thermal pulse measurements of space charge distributions under an applied electric field in thin films

    International Nuclear Information System (INIS)

    Zheng, Feihu; An, Zhenlian; Zhang, Yewen; Liu, Chuandong; Lin, Chen; Lei, Qingquan

    2013-01-01

    The thermal pulse method is a powerful method to measure space charge and polarization distributions in thin dielectric films, but a complicated calibration procedure is necessary to obtain the real distribution. In addition, charge dynamic behaviour under an applied electric field cannot be observed by the classical thermal pulse method. In this work, an improved thermal pulse measuring system with a supplemental circuit for applying high voltage is proposed to realize the mapping of charge distribution in thin dielectric films under an applied field. The influence of the modified measuring system on the amplitude and phase of the thermal pulse response current are evaluated. Based on the new measuring system, an easy calibration approach is presented with some practical examples. The newly developed system can observe space charge evolution under an applied field, which would be very helpful in understanding space charge behaviour in thin films. (paper)

  13. The enhanced piezoelectricity in compositionally graded ferroelectric thin films under electric field: A role of flexoelectric effect

    Science.gov (United States)

    Qiu, Ye; Wu, Huaping; Wang, Jie; Lou, Jia; Zhang, Zheng; Liu, Aiping; Chai, Guozhong

    2018-02-01

    Compositionally graded ferroelectric thin films are found to produce large strain gradients, which can be used to tune the physical properties of materials through the flexoelectric effect, i.e., the coupling of polarization and the strain gradient. The influences of the flexoelectric effect on the polarization distribution and the piezoelectric properties in compositionally graded Ba1-xSrxTiO3 ferroelectric thin films are investigated by using an extended thermodynamic theory. The calculation results show that the presence of the flexoelectric effect tends to enhance and stabilize polarization components. The polarization rotation induced by the flexoelectric field has been predicted, which is accompanied by more uniform and orderly polarization components. A remarkable enhancement of piezoelectricity is obtained when the flexoelectric field is considered, suggesting that compositionally graded Ba1-xSrxTiO3 ferroelectric thin films with a large strain gradient are promising candidates for piezoelectric devices.

  14. Nanomagnetic behavior of fullerene thin films in Earth magnetic field in dark and under polarization light influences.

    Science.gov (United States)

    Koruga, Djuro; Nikolić, Aleksandra; Mihajlović, Spomenko; Matija, Lidija

    2005-10-01

    In this paper magnetic fields intensity of C60 thin films of 60 nm and 100 nm thickness under the influence of polarization lights are presented. Two proton magnetometers were used for measurements. Significant change of magnetic field intensity in range from 2.5 nT to 12.3 nT is identified as a difference of dark and polarization lights of 60 nm and 100 nm thin films thickness, respectively. Specific power density of polarization light was 40 mW/cm2. Based on 200 measurement data average value of difference between magnetic intensity of C60 thin films, with 60 nm and 100 nm thickness, after influence of polarization light, were 3.9 nT and 9.9 nT respectively.

  15. MIS field effect transistor with barium titanate thin film as a gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Firek, P., E-mail: pfirek@elka.pw.edu.p [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Werbowy, A.; Szmidt, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2009-11-25

    The properties of barium titanate (BaTiO{sub 3}, BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO{sub 3} (containing La{sub 2}O{sub 3} admixture) thin films in a role of gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO{sub 3} + La{sub 2}O{sub 3} (2 wt.%) target. In the paper transfer and output current-voltage (I-V), transconductance and output conductance characteristics of obtained transistors are presented and discussed. Basic parameters of these devices like, e.g. threshold voltage (V{sub TH}), are determined and discussed.

  16. A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing.

    Science.gov (United States)

    St George, Tiffany; Vlahos, Penny; Harner, Tom; Helm, Paul; Wilford, Bryony

    2011-02-01

    Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K(EVA-W) partition coefficients correlate well (r(2) = 0.87) with Log K(OW) values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K(EVA-W) = 1.04 Log K(OW) + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. Published by Elsevier Ltd.

  17. Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

    International Nuclear Information System (INIS)

    Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji

    2014-01-01

    We report the electric-field modulation of magnetism of a hexagonal Cr 1-δ Te thin film. A gate voltage V G is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr 1-δ Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr 1-δ Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

    Energy Technology Data Exchange (ETDEWEB)

    Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji [Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-07-15

    We report the electric-field modulation of magnetism of a hexagonal Cr{sub 1-δ}Te thin film. A gate voltage V{sub G} is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr{sub 1-δ}Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr{sub 1-δ}Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Influence of defects on the absorption edge of InN thin films: The band gap value

    Science.gov (United States)

    Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

    2007-07-01

    We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

  20. Field-impressed anisotropy of susceptibility in iron-terbium thin films

    International Nuclear Information System (INIS)

    Stephenson, A.; Booth, N.A.

    1995-01-01

    Two thin films of Fe 1-x Tb x where x=0.17 and 0.23 are shown to exhibit the effect of field-impressed anisotropy. After application of a direct field of 80 mT, which gives them an isothermal remanent magnetization (IRM) in their plane, the anisotropy of initial susceptibility differs from that measured after the films have been tumble-demagnetized. By subtracting the susceptibility results of the tumble-demagnetized state from those obtained after the application of the 80 mT direct field, it is shown that the effect of this field is to decrease the susceptibility measured along the former applied field direction and to increase the susceptibility at right angles to this. The effect is almost certainly due to changes in domain alignment. Even though these films contain many domains, the above results are similar to those previously obtained for single-domain γFe 2 O 3 and magnetite particles. The sense of the effect is opposite to that for multi-domain magnetite particles where the susceptibility has been found to increase along the previously applied field direction. ((orig.))

  1. Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

    Science.gov (United States)

    2011-12-01

    band gap of highly textured PZT thin films. The deposition process variables were - argon and oxygen flows, chamber pressure, RF power (DC Bias...needed another parameter to equate with the number of unknowns in the resultant model equations. From Figure 24, electronic polarizability affects the... Polarizability and Optical dielectric response of a thin.film , ., ,__~--~---\\- 000 01’ "󈧶 Ots Tncnt.re"’°l Effective Polarizability = Reddy

  2. Structural and morphological changes in P3HT thin film transistors applying an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, Deepak Kumar; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany); Flesch, Heinz; Resel, Roland [University of Siegen (Germany); Graz University of Technology (Austria)

    2010-07-01

    We report on electric field dependent crystalline structure and morphological changes of drop casting and spin coated poly(3-hexylthiophene) (P3HT) thin films. In order to probe the morphological changes induced by an applied electric field the samples were covered with thin source/drain electrodes separated by a small channel of 2 mm width. A series of x-ray reflectivity, X-ray grazing incidence out-of-plane and in-plane scans have been performed as function of the applied electric voltage. The (100) peak shows a decrease in intensity with increase of the applied electric field. This might be caused by Joule heating and the creation of current induced defects in the P3HT film. On other hand the (020) peak intensity shows much stronger changes with applied field. Considering the *-* stacking direction the measured effect can be directly related to a change in the electric transport. The observed changes in structure are reversible and the current-voltage cycle can be repeated several times. For X-ray reflectivity major changes have been found close to critical angle of total external reflection indicating the film becomes less dense and increases in surface roughness with increase of the voltage. This change in surface behaviour could be confirmed by in-situ AFM measurements.

  3. Electromechanical interactions in a carbon nanotube based thin film field emitting diode

    International Nuclear Information System (INIS)

    Sinha, N; Mahapatra, D Roy; Sun, Y; Yeow, J T W; Melnik, R V N; Jaffray, D A

    2008-01-01

    Carbon nanotubes (CNTs) have emerged as promising candidates for biomedical x-ray devices and other applications of field emission. CNTs grown/deposited in a thin film are used as cathodes for field emission. In spite of the good performance of such cathodes, the procedure to estimate the device current is not straightforward and the required insight towards design optimization is not well developed. In this paper, we report an analysis aided by a computational model and experiments by which the process of evolution and self-assembly (reorientation) of CNTs is characterized and the device current is estimated. The modeling approach involves two steps: (i) a phenomenological description of the degradation and fragmentation of CNTs and (ii) a mechanics based modeling of electromechanical interaction among CNTs during field emission. A computational scheme is developed by which the states of CNTs are updated in a time incremental manner. Finally, the device current is obtained by using the Fowler-Nordheim equation for field emission and by integrating the current density over computational cells. A detailed analysis of the results reveals the deflected shapes of the CNTs in an ensemble and the extent to which the initial state of geometry and orientation angles affect the device current. Experimental results confirm these effects

  4. Film growth kinetics and electric field patterning during electrospray deposition of block copolymer thin films

    Science.gov (United States)

    Toth, Kristof; Hu, Hanqiong; Choo, Youngwoo; Loewenberg, Michael; Osuji, Chinedum

    The delivery of sub-micron droplets of dilute polymer solutions to a heated substrate by electrospray deposition (ESD) enables precisely controlled and continuous growth of block copolymer (BCP) thin films. Here we explore patterned deposition of BCP films by spatially varying the electric field at the substrate using an underlying charged grid, as well as film growth kinetics. Numerical analysis was performed to examine pattern fidelity by considering the trajectories of charged droplets during flight through imposed periodic field variations in the vicinity of the substrate. Our work uncovered an unexpected modality for improving the resolution of the patterning process via stronger field focusing through the use of a second oppositely charged grid beneath a primary focusing array, with an increase in highly localized droplet deposition on the intersecting nodes of the grid. Substrate coverage kinetics are considered for homopolymer deposition in the context of simple kinetic models incorporating temperature and molecular weight dependence of diffusivity. By contrast, film coverage kinetics for block copolymer depositions are additionally convoluted with preferential wetting and thickness-periodicity commensurability effects. NSF GRFP.

  5. Influence of heat treatment on field emission characteristics of boron nitride thin films

    International Nuclear Information System (INIS)

    Li Weiqing; Gu Guangrui; Li Yingai; He Zhi; Feng Wei; Liu Lihua; Zhao Chunhong; Zhao Yongnian

    2005-01-01

    Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 x 10 -4 Pa and the temperature of 800 and 1000 deg. C, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/μm and the emission current of 80 μA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 deg. C and disappeared at temperature of 1000 deg. C

  6. The electrical resistivity of rough thin films: A model based on electron reflection at discrete step edges

    Science.gov (United States)

    Zhou, Tianji; Zheng, Pengyuan; Pandey, Sumeet C.; Sundararaman, Ravishankar; Gall, Daniel

    2018-04-01

    The effect of the surface roughness on the electrical resistivity of metallic thin films is described by electron reflection at discrete step edges. A Landauer formalism for incoherent scattering leads to a parameter-free expression for the resistivity contribution from surface mound-valley undulations that is additive to the resistivity associated with bulk and surface scattering. In the classical limit where the electron reflection probability matches the ratio of the step height h divided by the film thickness d, the additional resistivity Δρ = √{3 /2 } /(g0d) × ω/ξ, where g0 is the specific ballistic conductance and ω/ξ is the ratio of the root-mean-square surface roughness divided by the lateral correlation length of the surface morphology. First-principles non-equilibrium Green's function density functional theory transport simulations on 1-nm-thick Cu(001) layers validate the model, confirming that the electron reflection probability is equal to h/d and that the incoherent formalism matches the coherent scattering simulations for surface step separations ≥2 nm. Experimental confirmation is done using 4.5-52 nm thick epitaxial W(001) layers, where ω = 0.25-1.07 nm and ξ = 10.5-21.9 nm are varied by in situ annealing. Electron transport measurements at 77 and 295 K indicate a linear relationship between Δρ and ω/(ξd), confirming the model predictions. The model suggests a stronger resistivity size effect than predictions of existing models by Fuchs [Math. Proc. Cambridge Philos. Soc. 34, 100 (1938)], Sondheimer [Adv. Phys. 1, 1 (1952)], Rossnagel and Kuan [J. Vac. Sci. Technol., B 22, 240 (2004)], or Namba [Jpn. J. Appl. Phys., Part 1 9, 1326 (1970)]. It provides a quantitative explanation for the empirical parameters in these models and may explain the recently reported deviations of experimental resistivity values from these models.

  7. Enhanced field emission from Si doped nanocrystalline AlN thin films

    International Nuclear Information System (INIS)

    Thapa, R.; Saha, B.; Chattopadhyay, K.K.

    2009-01-01

    Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

  8. Low field critical currents and ac losses of thin film niobium--tin superconductors

    International Nuclear Information System (INIS)

    Howard, R.E.

    1977-01-01

    The results of a study of the low field critical current and ac loss properties of niobium-tin thin films and layered composites fabricated by electron-beam coevaporation are presented. Particular emphasis is placed upon determining the suitability of this material for use as a conductor in a superconducting power transmission line. Chapter I contains a summary of this work and its major results together with an introduction to the scientific and engineering concepts associated with a superconducting power transmission line. Chapter II is a discussion of the physics of current transport and the associated loss mechanisms in a type-II superconductor. Chapter III gives the details of the electron-beam coevaporation technique developed to fabricate the samples for this study. Also discussed in this chapter are the effects of the evaporation conditions on the growth morphology of the niobium-tin films. Chapter IV presents the details of the experimental techniques developed to measure the ac loss and critical current in these samples as a function of temperature. Chapter V shows the dependence of the critical current of these films and composites on temperature, magnetic field, and on the number of artificially introduced pinning centers in the layered composites. Experimental results are also presented concerning the stability of these conductors against flux jumps. Chapter VI is a discussion of the ac losses in these samples. Detailed comparisons are made between the measured loss and the predictions of the critical state model

  9. Direct Reconstruction of Two-Dimensional Currents in Thin Films from Magnetic-Field Measurements

    Science.gov (United States)

    Meltzer, Alexander Y.; Levin, Eitan; Zeldov, Eli

    2017-12-01

    An accurate determination of microscopic transport and magnetization currents is of central importance for the study of the electric properties of low-dimensional materials and interfaces, of superconducting thin films, and of electronic devices. Current distribution is usually derived from the measurement of the perpendicular component of the magnetic field above the surface of the sample, followed by numerical inversion of the Biot-Savart law. The inversion is commonly obtained by deriving the current stream function g , which is then differentiated in order to obtain the current distribution. However, this two-step procedure requires filtering at each step and, as a result, oversmooths the solution. To avoid this oversmoothing, we develop a direct procedure for inversion of the magnetic field that avoids use of the stream function. This approach provides enhanced accuracy of current reconstruction over a wide range of noise levels. We further introduce a reflection procedure that allows for the reconstruction of currents that cross the boundaries of the measurement window. The effectiveness of our approach is demonstrated by several numerical examples.

  10. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

    2012-01-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

  11. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  12. The field induced e31,f piezoelectric and Rayleigh response in barium strontium titanate thin films

    International Nuclear Information System (INIS)

    Garten, L. M.; Trolier-McKinstry, S.

    2014-01-01

    The electric field induced e 31,f piezoelectric response and tunability of Ba 0.7 Sr 0.3 TiO 3 (70:30) and Ba 0.6 Sr 0.4 TiO 3 (60:40) thin films on MgO and silicon was measured. The relative dielectric tunabilities for the 70:30 and 60:40 compositions on MgO were 83% and 70%, respectively, with a dielectric loss of less than 0.011 and 0.004 at 100 kHz. A linear increase in induced piezoelectricity to −3.0 C/m 2 and −1.5 C/m 2 at 110 kV/cm was observed in Ba 0.6 Sr 0.4 TiO 3 on MgO and Ba 0.7 Sr 0.3 TiO 3 on Si. Hysteresis in the piezoelectric and dielectric response of the 70:30 composition films was consistent with the positive irreversible dielectric Rayleigh coefficient. Both indicate a ferroelectric contribution to the piezoelectric and dielectric response over 40–80 °C above the global paraelectric transition temperature.

  13. Thin-film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  14. Field-modulation spectroscopy of pentacene thin films using field-effect devices: Reconsideration of the excitonic structure

    Science.gov (United States)

    Haas, Simon; Matsui, Hiroyuki; Hasegawa, Tatsuo

    2010-10-01

    We report pure electric-field effects on the excitonic absorbance of pentacene thin films as measured by unipolar field-effect devices that allowed us to separate the charge accumulation effects. The field-modulated spectra between 1.8 and 2.6 eV can be well fitted with the first derivative curve of Frenkel exciton absorption and its vibronic progression, and at higher energy a field-induced feature appears at around 2.95 eV. The results are in sharp contrast to the electroabsorption spectra reported by Sebastian in previous studies [Chem. Phys. 61, 125 (1981)10.1016/0301-0104(81)85055-0], and leads us to reconsider the excitonic structure including the location of charge-transfer excitons. Nonlinear π -electronic response is discussed based on second-order electro-optic (Kerr) spectra.

  15. A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jamshidian, M., E-mail: jamshidian@cc.iut.ac.ir [Department of Mechanical Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstrasse 15, 99423 Weimar (Germany); Thamburaja, P., E-mail: prakash.thamburaja@gmail.com [Department of Mechanical & Materials Engineering, Universiti Kebangsaan Malaysia (UKM), Bangi 43600 (Malaysia); Rabczuk, T., E-mail: timon.rabczuk@tdt.edu.vn [Division of Computational Mechanics, Ton Duc Thang University, Ho Chi Minh City (Viet Nam); Faculty of Civil Engineering, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)

    2016-12-15

    A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substrate and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.

  16. Preparation, microwave and magnetic field response of YBaCuO thin film microbridges

    NARCIS (Netherlands)

    Hauser, B.; Klopman, B.B.G.; Rogalla, Horst

    1989-01-01

    On YBaCuO thin films, which were deposited at ambient temperature and were superconducting after post-deposition annealing in oxygen, microbridges and d.c. superconducting quantium interference devices (SQUIDs) were constructed by lift-off. Over a temperature range from 4.2 to > 70 K the devices

  17. Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors.

    Science.gov (United States)

    Okada, Jun; Nagase, Takashi; Kobayashi, Takashi; Naito, Hiroyoshi

    2016-04-01

    Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

  18. Amplitude-phase characteristics of electromagnetic fields diffracted by a hole in a thin film with realistic optical properties

    Science.gov (United States)

    Dorofeyev, Illarion

    2009-03-01

    Characteristics of a quasi-spherical wave front of an electromagnetic field diffracted by a subwavelength hole in a thin film with real optical properties are studied. Related diffraction problem is solved in general by use of the scalar and vector Green's theorems and related Green's function of a boundary-value problem. Local phase deviations of a diffracted wave front from an ideal spherical front are calculated. Diffracted patterns are calculated for the coherent incident fields in case of holes array in a screen of perfect conductivity.

  19. Characterization of the adhesion of thin film by Cross-Sectional Nanoindentation. Analysis of the substrate edge chipping and the film delamination

    Science.gov (United States)

    Felder, Eric; Roy, Sébastien; Darque-Ceretti, Evelyne

    2011-07-01

    Cross-Sectional Nanoindentation (CSN) is a recent method for adhesion measurement of nanoscale thin films in Ultra-Large Scale Integrated circuits. In the case of ductile thin films, the motion of the substrate chip implies significant plastic deformation of the film and complex geometry of delaminated areas. This article recalls first the experimental procedure and the two main features observed in this test performed on various plane copper films deposited on silicon: the critical force producing silicon edge chipping increases linearly with the distance of the indenter to the interface; on the section the delaminated length of the film ( a-b) is proportional to the residual silicon chip displacement u and the ratio S=u/(a-b) depends on the manufacturing process of the film, and is so related to its adhesion to the substrate. One proposes a simple analysis of the silicon edge chipping. Then a model of pull-off of an elastic-strain hardening plastic film is developed, which suggests an explanation for the delamination process. Application of the model to experimental results starting from films plastic properties deduced from nanoindentation measurements provides plausible results. Some improvements for performing the CSN test are proposed in order to make easier its interpretation.

  20. Mechanics of Thin Films

    Science.gov (United States)

    1992-02-06

    and the second geometry was that of squat cylinders (diameter 6.4 mm, height 6.4 mm). These two geometries were tested in thermal shock tests, and a...milder [13]. More recently, Lau, Rahman and stressa nce ntrati, tha n films of lmalla rat ve spc Delale calculated the free edge singularity for stress...thickness of 3 mm); the second geometry was that As an example of the shielding effect of thin films, we of squat cylinders (diameter 6.4 mm, height 6.4

  1. Electronic structure of Cr doped Fe3O4 thin films by X-ray absorption near-edge structure spectroscopy

    Science.gov (United States)

    Chen, Chi-Liang; Dong, Chung-Li; Asokan, Kandasami; Chern, G.; Chang, C. L.

    2018-04-01

    Present study reports the electronic structures of Cr doped Fe3O4 (Fe3-xCrxO4 (0 ≤ x ≤ 3) grown on MgO (100) substrates in the form of thin films fabricated by a plasma-oxygen assisted Molecular Beam Epitaxy (MBE). X-ray absorption near-edge structure (XANES) spectra at Cr & Fe L-, and O K-edges were used to understand the electronic structure: changes in the bonding nature, valence states, and site occupancies. Cr doping in Fe3O4 results in the change of charge transfer, crystal structure, and selective occupation of ions in octahedral and tetrahedral sites. Such change modifies the electrical and magnetic properties due to the covalency of Cr ions. The physical and chemical properties of ferrites are strongly dependent on the lattice site, ion size of dopant, and magnetic nature present at different structural symmetry of the spinel structure.

  2. Magnetic field induced changes in linear and nonlinear optical properties of Ti incorporated Cr2O3 nanostructured thin film

    Science.gov (United States)

    Baraskar, Priyanka; Chouhan, Romita; Agrawal, Arpana; Choudhary, R. J.; Sen, Pranay K.; Sen, Pratima

    2018-03-01

    We report the magnetic field effect on the linear and nonlinear optical properties of pulse laser ablated Ti-incorporated Cr2O3 nanostructured thin film. Optical properties have been experimentally analyzed under Voigt geometry by performing ultraviolet-visible spectroscopy and closed aperture Z-scan technique using a continuous wave He-Ne laser source. Nonlinear optical response reveals a single peak-valley feature in the far field diffraction pattern in absence of magnetic field (B = 0) confirming self-defocussing effect. This feature switches to a valley-peak configuration for B = 5000G, suggesting self-focusing effect. For B ≤ 750G, oscillations were observed revealing the occurrence of higher order nonlinearity. Origin of nonlinearity is attributed to the near resonant d-d transitions observed from the broad peak occurring around 2 eV. These transitions are of magnetic origin and get modified under the application of external magnetic field. Our results suggest that magnetic field can be used as an effective tool to monitor the sign of optical nonlinearity and hence the thermal expansion in Ti-incorporated Cr2O3 nanostructured thin film.

  3. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Dudney, Nancy J.

    2008-01-01

    aerosol spray coating, for one or more components of the battery. The active materials used for the thin film cathodes and anodes are familiar intercalation compounds, but the microstructures and often the cycling properties of the thin films may be quite distinct from those of battery electrodes formed from powders. The thin film cathodes are dense and homogeneous with no added phases such as binders or electrolytes. When deposited at ambient temperatures, the films of cathodes, such as LiCoO 2 , V 2 O 5 , LiMn 2 O4 , LiFePO 4 are amorphous or nanocrystalline. But even in this form, they often act as excellent cathodes with large specific capacities and good stability for hundreds to thousands of cycles. Annealing the cathode films at temperatures of 300 to 800 C may be used to induce crystallization and grain growth of the desired intercalation compound. Crystallizing the cathode film generally improves the Li chemical diffusivity in the electrode material, and hence the power delivered by the battery, by 1-2 orders of magnitude. The microstructure is also tailored by the deposition and heat treatment. Figure 3 shows a fracture edge of an annealed LiCoO 2 cathode film on an alumina substrate. The columnar microstructure, which is typical of a vapor deposited film, sinters at high temperatures leaving small fissures between the dense columns. Such crystalline films also may have a preferred crystallographic orientation. For LiCoO 2 films the crystallographic texture differs for films deposited by sputtering versus pulse laser ablation processes. To improve the manufacturability of the thin film batteries, it would be beneficial to eliminate or minimize the temperature or duration of the annealing step. Several efforts have lead to low temperature fabrication of thin film batteries on polyimide substrates, but the battery capacity and rate are lower than those treated at high temperatures. For the battery anode, many designs use a vapor-deposited metallic lithium film as

  4. Electric-field-induced modification of the magnon energy, exchange interaction, and curie temperature of transition-metal thin films.

    Science.gov (United States)

    Oba, M; Nakamura, K; Akiyama, T; Ito, T; Weinert, M; Freeman, A J

    2015-03-13

    The electric-field-induced modification in the Curie temperature of prototypical transition-metal thin films with the perpendicular magnetic easy axis, a freestanding Fe(001) monolayer and a Co monolayer on Pt(111), is investigated by first-principles calculations of spin-spiral structures in an external electric field (E field). An applied E field is found to modify the magnon (spin-spiral formation) energy; the change arises from the E-field-induced screening charge density in the spin-spiral states due to p-d hybridizations. The Heisenberg exchange parameters obtained from the magnon energy suggest an E-field-induced modification of the Curie temperature, which is demonstrated via Monte Carlo simulations that take the magnetocrystalline anisotropy into account.

  5. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  6. Magnetic Field Dependence of the Critical Current in S-N Bilayer Thin Films

    Science.gov (United States)

    Sadleir, John E.; Lee, Sang-Jun; Smith, Stephen James; Bandler, Simon; Chervenak, James; Kilbourne, Caroline A.; Finkbeiner, Fred M.; Porter, Frederick S.; Kelley, Richard L.; Adams, Joseph S.; hide

    2013-01-01

    Here we investigate the effects a non-uniform applied magnetic field has on superconducting transition-edge sensors (TESs) critical current. This has implications on TES optimization. It has been shown that TESs resistive transition can be altered by magnetic fields. We have observed critical current rectification effects and explained these effects in terms of a magnetic self-field arising from asymmetric current injection into the sensor. Our TES physical model shows that this magnetic self-field can result in significantly degraded or improved TES performance. In order for this magnetically tuned TES strategy to reach its full potential we are investigating the effect a non-uniform applied magnetic field has on the critical current.

  7. Tunable field emission characteristics of ZnO nanowires coated with varied thickness of lanthanum boride thin films

    International Nuclear Information System (INIS)

    Zhao, C.X.; Li, Y.F.; Chen, Jun; Deng, S.Z.; Xu, N.S.

    2013-01-01

    Lanthanum boride (LaB x ) thin films with various thicknesses were deposited on ZnO nanowire arrays by electron beam evaporation. Field emission characteristics of ZnO nanowires show close dependence on LaB x coating thickness. The turn-on field increases with increasing LaB x coating thickness from 10 nm to 50 nm. The observed phenomena were explained by a model that the tunneling at ZnO/LaB x interface dominates the emission process. - Highlights: ► Coating thickness dependence of field emission characteristics of ZnO nanowires was observed from LaB x coated ZnO nanowires. ► More stable field emission was observed from ZnO nanowires with LaB x coating. ► A model was proposed that the tunneling at ZnO/LaB x interface dominates the emission process

  8. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  9. Lens of controllable optical field with thin film metallic glasses for UV-LEDs.

    Science.gov (United States)

    Pan, C T; Chen, Y C; Lin, Po-Hung; Hsieh, C C; Hsu, F T; Lin, Po-Hsun; Chang, C M; Hsu, J H; Huang, J C

    2014-06-16

    In the exposure process of photolithography, a free-form lens is designed and fabricated for UV-LED (Ultraviolet Light-Emitting Diode). Thin film metallic glasses (TFMG) are adopted as UV reflection layers to enhance the irradiance and uniformity. The Polydimethylsiloxane (PDMS) with high transmittance is used as the lens material. The 3-D fast printing is attempted to make the mold of the lens. The results show that the average irradiance can be enhanced by 6.5~6.7%, and high uniformity of 85~86% can be obtained. Exposure on commercial thick photoresist using this UV-LED system shows 3~5% dimensional deviation, lower than the 6~8% deviation for commercial mercury lamp system. This current system shows promising potential to replace the conventional mercury exposure systems.

  10. Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

    Science.gov (United States)

    Ning, Shuai; Zhan, Peng; Wang, Wei-Peng; Li, Zheng-Cao; Zhang, Zheng-Jun

    2014-12-01

    Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ~ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ~ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

  11. Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

    International Nuclear Information System (INIS)

    Ning Shuai; Zhan Peng; Wang Wei-Peng; Li Zheng-Cao; Zhang Zheng-Jun

    2014-01-01

    Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ∼ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ∼ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    Science.gov (United States)

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

    2012-06-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

  13. Experiments and numerical modeling of fast flowing liquid metal thin films under spatially varying magnetic field conditions

    Science.gov (United States)

    Narula, Manmeet Singh

    Innovative concepts using fast flowing thin films of liquid metals (like lithium) have been proposed for the protection of the divertor surface in magnetic fusion devices. However, concerns exist about the possibility of establishing the required flow of liquid metal thin films because of the presence of strong magnetic fields which can cause flow disrupting MHD effects. A plan is underway to design liquid lithium based divertor protection concepts for NSTX, a small spherical torus experiment at Princeton. Of these, a promising concept is the use of modularized fast flowing liquid lithium film zones, as the divertor (called the NSTX liquid surface module concept or NSTX LSM). The dynamic response of the liquid metal film flow in a spatially varying magnetic field configuration is still unknown and it is suspected that some unpredicted effects might be lurking. The primary goal of the research work being reported in this dissertation is to provide qualitative and quantitative information on the liquid metal film flow dynamics under spatially varying magnetic field conditions, typical of the divertor region of a magnetic fusion device. The liquid metal film flow dynamics have been studied through a synergic experimental and numerical modeling effort. The Magneto Thermofluid Omnibus Research (MTOR) facility at UCLA has been used to design several experiments to study the MHD interaction of liquid gallium films under a scaled NSTX outboard divertor magnetic field environment. A 3D multi-material, free surface MHD modeling capability is under development in collaboration with HyPerComp Inc., an SBIR vendor. This numerical code called HIMAG provides a unique capability to model the equations of incompressible MHD with a free surface. Some parts of this modeling capability have been developed in this research work, in the form of subroutines for HIMAG. Extensive code debugging and benchmarking exercise has also been carried out. Finally, HIMAG has been used to study the

  14. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  15. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  16. Superconducting oxypnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

    2012-07-01

    We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.

  17. Analysis rbs of CdS thin films grown by cbd to different intensities of the magnetic field and temperature of the chemical bath

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, O.

    1999-01-01

    Depth and composition of CdS thin films grown by chemical bath deposition under different temperature and magnetic DC field conditions, were determined by Rutherford Backscattering Spectrometry. The above parameters were evaluated as a function of the bath temperature and the intensity of the induction magnetic field applied

  18. Analysis of low-field isotropic vortex glass containing vortex groups in YBa2Cu3O7-x thin films visualized by scanning SQUID microscopy

    NARCIS (Netherlands)

    Wells, Frederick S.; Pan, Alexey V.; Wang, X.; Fedoseev, Sergey A.; Hilgenkamp, Hans

    2015-01-01

    The glass-like vortex distribution in pulsed laser deposited YBa2Cu3O7-x thin films is observed by scanning superconducting quantum interference device microscopy and analysed for ordering after cooling in magnetic fields significantly smaller than the Earth's field. Autocorrelation calculations on

  19. Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor.

    Science.gov (United States)

    Mills, Edmund M; Min, Bok Ki; Kim, Seong K; Kim, Seong Jun; Kang, Min-A; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok; Jung, Jongwan; Kim, Sangtae

    2015-08-26

    Graphene barristors are a novel type of electronic switching device with excellent performance, which surpass the low on-off ratios that limit the operation of conventional graphene transistors. In barristors, a gate bias is used to vary graphene's Fermi level, which in turn controls the height and resistance of a Schottky barrier at a graphene/semiconductor heterojunction. Here we demonstrate that the switching characteristic of a thin-film ZnO/graphene device with simple geometry results from tunneling current across the Schottky barriers formed at the ZnO/graphene heterojunctions. Direct characterization of the current-voltage-temperature relationship of the heterojunctions by ac-impedance spectroscopy reveals that this relationship is controlled predominantly by field emission, unlike most graphene barristors in which thermionic emission is observed. This governing mechanism makes the device unique among graphene barristors, while also having the advantages of simple fabrication and outstanding performance.

  20. Upper-critical fields of YBa2Cu3O7-δ epitaxial thin films with variable oxygen deficiency δ

    International Nuclear Information System (INIS)

    Jones, E.C.; Christen, D.K.; Thompson, J.R.; Ossandon, J.G.; Feenstra, R.; Phillips, J.M.; Siegal, M.P.

    1994-01-01

    Fluctuation analysis in the limit of high magnetic fields was performed on three epitaxial thin films of YBa 2 Cu 3 O 7-δ for various oxygen deficiencies δ c2 (T) slope of -1.7 T/K for H parallel c, consistent with previous observations of transport and magnetic properties. Moreover, the 3D scaling showed better convergence than the 2D scaling, which gave relatively low values of H c2 . In contrast, the transitions were not adequately described by either scaling for T c off the 90-K plateau; it is speculated that this is due to an extrinsic broadening of the transitions, possibly due to the lack of a complete percolation path of the ortho-I phase (δ=0)

  1. Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

    International Nuclear Information System (INIS)

    Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Schlom, D. G.; Li, F.; Chen, L.-Q.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

    2016-01-01

    The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

  2. Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

    Science.gov (United States)

    Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

    2018-04-01

    Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

  3. Anisotropy of the irreversibility field for Zr-doped $(Y,Gd)Ba_2Cu_3O_{7-x}$ thin films up to 45T

    OpenAIRE

    Tarantini, C.; Jaroszynski, J.; Kametani, F.; Zuev, Y. L.; Gurevich, A.; Chen, Y.; Selvamanickam, V.; Larbalestier, D. C.; Christen, D. K.

    2012-01-01

    The anisotropic irreversibility field B$_{Irr}$ of two $YBa_2Cu_3O_{7-x}$ thin films doped with additional rare earth (RE)=(Gd,Y) and Zr and containing strong correlated pins (splayed BaZrO$_{3}$ nanorods, and $RE_2O_3$ nanoprecipitates), has been measured over a very broad range up to 45T at temperatures 56 K

  4. Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

    2013-01-01

    Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

  5. Accurate measurement of the piezoelectric coefficient of thin films by eliminating the substrate bending effect using spatial scanning laser vibrometry

    International Nuclear Information System (INIS)

    Leighton, Glenn J T; Huang, Zhaorong

    2010-01-01

    One of the major difficulties in measuring the piezoelectric coefficient d 33,f for thin films is the elimination of the contribution from substrate bending. We show by theoretical analysis and experimental measurements that by bonding thin film piezoelectric samples to a substantial holder, the substrate bending can be minimized to a negligible level. Once the substrate bending can be effectively eliminated, single-beam laser scanning vibrometry can be used to measure the precise strain distribution of a piezoelectric thin film under converse actuation. A significant strain increase toward the inside edge of the top electrode (assuming a fully covered bottom electrode) and a corresponding strain peak in the opposite direction just outside the electrode edge were observed. These peaks were found to increase with the increasing Poisson's ratio and transverse piezoelectric coefficient of the piezoelectric thin film. This is due to the non-continuity of the electric field at the edge of the top electrode, which leads to the concentration of shear stress and electric field in the vicinity of the electrode edge. The measured d 33,f was found to depend not only on the material properties such as the electromechanical coefficients of the piezoelectric thin films and elastic coefficients of the thin film and the substrate, but also on the geometry factors such as the thickness of the piezoelectric films, the dimensions of the electrode, and also the thickness of the substrate

  6. High field properties of superconducting BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richter, Stefan [Institute for Metallic Materials, IFW Dresden (Germany); Technical University Dresden (Germany); Kurth, Fritz; Grinenko, Vadim; Nielsch, Kornelius; Huehne, Ruben [Institute for Metallic Materials, IFW Dresden (Germany); Iida, Kazumasa [Nagoya University (Japan); Pervakov, Kirill [Russian Academy of Sciences (Russian Federation); Tarantini, Chiara; Jaroszynski, Jan [National High Magnetic Field Laboratory (United States); Pukenas, Aurimas; Skrotzki, Werner [Technical University Dresden (Germany)

    2016-07-01

    Fe based superconductors combine the advantages of cuprates (high upper critical field) with the small Hc{sub 2} anisotropy of classic low temperature superconductors, which makes them suitable candidates for high field applications. The study of Fe-based superconducting thin films is one crucial step to explore this potential in more detail. We present results for epitaxial BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films, which have been successfully grown for the first time using pulsed laser deposition. Superconducting transition temperatures of up to 19 K have been realized in slightly overdoped films, which is in good agreement with results obtained for single crystals. The behavior of the upper critical field and critical current density has been measured in high magnetic fields up to 35 T. The results will be correlated to the observed microstructure and compared to high field data for single crystals with similar composition.

  7. Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

    Energy Technology Data Exchange (ETDEWEB)

    Morley, Neil B. [Univ. of California, Los Angeles, CA (United States)

    1994-01-01

    Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along {rvec B}. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization.

  8. Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

    International Nuclear Information System (INIS)

    Morley, N.B.

    1994-01-01

    Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along rvec B. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization

  9. Coupling of near-field thermal radiative heating and phonon Monte Carlo simulation: Assessment of temperature gradient in n-doped silicon thin film

    International Nuclear Information System (INIS)

    Wong, Basil T.; Francoeur, Mathieu; Bong, Victor N.-S.; Mengüç, M. Pinar

    2014-01-01

    Near-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density. - Highlights: • This study investigates temperature distribution in an n-doped silicon thin film. • Near-field radiative heating is treated as a volumetric phenomenon. • The temperature gradient is computed using phonon MC simulation. • Temperature of thin film can be approximated as uniform for radiation calculations. • If heat source is a pulsed radiation, a temperature gradient can be established

  10. Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T

    Directory of Open Access Journals (Sweden)

    Wei Niu

    2017-05-01

    Full Text Available We report on the temperature and field dependence of resistance of La0.7Sr0.3MnO3 thin films over a wide temperature range and in pulsed magnetic fields up to 60 T. The epitaxial La0.7Sr0.3MnO3 thin films were deposited by laser molecular beam epitaxy. High magnetic field magnetoresistance curves were fitted by the Brillouin function, which indicated the existence of magnetically polarized regions and the underlying hopping mechanism. The unsaturated magnetoconductance was the most striking finding observed in pulsed magnetic fields up to 60 T. These observations can deepen the fundamental understanding of the colossal magnetoresistance in manganites with strong correlation of transport properties and magnetic ordering.

  11. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  12. Coulomb-Gas scaling law for a superconducting Bi(2+y)Sr(2-x-y)La(x)CuO(6+delta) thin films in magnetic fields

    Science.gov (United States)

    Zhang; Deltour; Zhao

    2000-10-16

    The electrical transport properties of epitaxial superconducting Bi(2+y)Sr(2-x-y)La(x)CuO(6+delta) thin films have been studied in magnetic fields. Using a modified Coulomb-gas scaling law, we can fit all the magnetic field dependent low resistance data with a universal scaling curve, which allows us to determine a relation between the activation energy of the thermally activated flux flow resistance and the characteristic temperature scaling parameters.

  13. Influence of standing-wave electric field pattern on the laser damage resistance of HfO sub 2 thin films

    CERN Document Server

    Protopapa, M L; De Tomasi, F; Di Giulio, M; Perrone, M R; Scaglione, S

    2002-01-01

    The standing-wave electric field pattern that forms inside an optical coating as a consequence of laser irradiation is one of the factors influencing the coating laser-induced damage threshold. The influence of the standing-wave electric field profile on the damage resistance to ultraviolet radiation of hafnium dioxide (HfO sub 2) thin films was investigated in this work. To this end, HfO sub 2 thin films of different thicknesses deposited by the electron beam evaporation technique at the same deposition conditions were analyzed. Laser damage thresholds of the samples were measured at 308 nm (XeCl laser) by the photoacoustic beam deflection technique and microscopic inspections. The dependence of the laser damage threshold on the standing-wave electric field pattern was analyzed.

  14. Influence of the physical–chemical properties of polyaniline thin films on the final sensitivity of varied field effect sensors

    International Nuclear Information System (INIS)

    Mello, Hugo José Nogueira Pedroza Dias; Heimfarth, Tobias; Mulato, Marcelo

    2015-01-01

    We investigated the use of electrodeposited polyaniline (PANI) thin sensing films in pH sensors. Two configurations of the Extended Gate Field Effect Transistor (EGFET) sensor were studied: the Single EGFET (S-EGFET) and the Instrumental Amplifier EGFET (IA-EGFET) setups. The films were analyzed in both systems and the sensitivity and linearity of each sensor were compared. Initial sensitivities (70–80 mV/pH) measured in the IA-EGFET were reduced due to polymer bulk protonation after a prior measurement in the S-EGFET system. Films with high amount of deposited polymer had their sensitivities least reduced. Bulk protonation occurred due to the step potential applied to the reference electrode in the S-EGFET system. These changes were also analyzed by scanning electron microscopy (SEM), visible reflectance spectroscopy and evaluation of CIE L*a*b* color scale. PANI pH EGFET sensors exhibited good linearity and stability that along with their high sensitivity, easy processing and low cost film production have large potential applications. - Highlights: • Electrodeposited polyaniline thin films were analyzed in two EGFET setups. • Polymer protonation provided changeable sensitivities. • Color and morphological variation confirm polymer aggregation and electrical changes

  15. Influence of the physical–chemical properties of polyaniline thin films on the final sensitivity of varied field effect sensors

    Energy Technology Data Exchange (ETDEWEB)

    Mello, Hugo José Nogueira Pedroza Dias, E-mail: hugodiasmello@usp.br; Heimfarth, Tobias; Mulato, Marcelo

    2015-06-15

    We investigated the use of electrodeposited polyaniline (PANI) thin sensing films in pH sensors. Two configurations of the Extended Gate Field Effect Transistor (EGFET) sensor were studied: the Single EGFET (S-EGFET) and the Instrumental Amplifier EGFET (IA-EGFET) setups. The films were analyzed in both systems and the sensitivity and linearity of each sensor were compared. Initial sensitivities (70–80 mV/pH) measured in the IA-EGFET were reduced due to polymer bulk protonation after a prior measurement in the S-EGFET system. Films with high amount of deposited polymer had their sensitivities least reduced. Bulk protonation occurred due to the step potential applied to the reference electrode in the S-EGFET system. These changes were also analyzed by scanning electron microscopy (SEM), visible reflectance spectroscopy and evaluation of CIE L*a*b* color scale. PANI pH EGFET sensors exhibited good linearity and stability that along with their high sensitivity, easy processing and low cost film production have large potential applications. - Highlights: • Electrodeposited polyaniline thin films were analyzed in two EGFET setups. • Polymer protonation provided changeable sensitivities. • Color and morphological variation confirm polymer aggregation and electrical changes.

  16. Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Todd, N. K.; Mathur, N. D.; Blamire, M. G.

    2001-01-01

    The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

  17. Aspects of 'low field' magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

    International Nuclear Information System (INIS)

    Moran, O.; Saldarriaga, W.; Baca, E.

    2007-01-01

    Epitaxial thin films of the conductive ferromagnetic oxide SrRuO 3 were grown on an (001) SrTiO 3 (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (001) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [100] S and [001] S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [001]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ 0 H=9T; T)-ρ( μ 0 H=0T; T)]/ρ( μ 0 H=0T; T) on the order of a few percent, with maximums of ∼6% and ∼4% (right at the Curie temperature, T C ∼160K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T 3 films grown on 2 o miscut (001) STO substrates with the current parallel to the field and parallel to the [1-bar11] direction, which was identified as the easier axis for magnetization

  18. The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

    International Nuclear Information System (INIS)

    Kotsuki, Kenji; Tanaka, Hiroshige; Obata, Seiji; Stauss, Sven; Terashima, Kazuo; Saiki, Koichiro

    2014-01-01

    We have investigated the film morphology and the field effect mobility of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) thin films which were formed by spin coating on the SiO 2 substrate with solution-processed graphene electrodes. The domain size and the density of aggregates in the C8-BTBT film showed the same dependence on the spinning speed. These competitive two factors (domain size and density of aggregates) give an optimum spinning speed, at which the field effect mobility of C8-BTBT transistor showed a maximum (2.6 cm 2 /V s). This result indicates the importance of spinning speed in the fabrication of solution processed organic thin film transistors by spin coating.

  19. Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields

    Directory of Open Access Journals (Sweden)

    Andrei E. Surdu

    2011-12-01

    Full Text Available The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (Jc from the magnetization hysteresis (M–H curves for both sets of samples and found that the Jc value of FeO-coated films is higher at all fields and temperatures than the Jc value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.

  20. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  1. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  2. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    International Nuclear Information System (INIS)

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-01-01

    Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

  3. Pentacene field-effect transistors by in situ and real time electrical characterization: Comparison between purified and non-purified thin films

    International Nuclear Information System (INIS)

    Liu, Shun-Wei; Wen, Je-Min; Lee, Chih-Chien; Su, Wei-Cheng; Wang, Wei-Lun; Chen, Ho-Chien; Lin, Chun-Feng

    2013-01-01

    We present an electrical characterization of the organic field-effect transistor with purified and non-purified pentacene by using in situ and real time measurements. The field-effect phenomenon was observed at the thickness of 1.5 nm (approximately one monolayer of pentacene) for purified pentacene, as compared to 3.0 nm for the non-purified counterpart. Moreover, the hole mobility is improved from 0.13 to 0.23 cm 2 /V s after the sublimation process to purify the pentacene. With atomic force microscopic measurements, the purified pentacene thin film exhibits a larger grain size and film coverage, resulting in better crystallinity of the thin film structure due to the absence of the impurities. This is further confirmed by X-ray diffraction patterns, which show higher intensities for the purified pentacene. - Highlights: • We present in-situ characterization for pentacene field-effect transistors. • The hole mobility is improved after the sublimation process to purify the pentacene. • Purified pentacene thin film exhibits a larger grain size and film coverage. • Hole mobility of pentacene is improved from 0.13 to 0.23 cm 2 /V s. • The discontinuity of grain boundary may cause the shift of threshold voltage

  4. Pentacene field-effect transistors by in situ and real time electrical characterization: Comparison between purified and non-purified thin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Shun-Wei, E-mail: swliu@mail.mcut.edu.tw [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan, ROC (China); Wen, Je-Min; Lee, Chih-Chien; Su, Wei-Cheng; Wang, Wei-Lun; Chen, Ho-Chien [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 10607 Taiwan, ROC (China); Lin, Chun-Feng [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan, ROC (China)

    2013-05-01

    We present an electrical characterization of the organic field-effect transistor with purified and non-purified pentacene by using in situ and real time measurements. The field-effect phenomenon was observed at the thickness of 1.5 nm (approximately one monolayer of pentacene) for purified pentacene, as compared to 3.0 nm for the non-purified counterpart. Moreover, the hole mobility is improved from 0.13 to 0.23 cm{sup 2}/V s after the sublimation process to purify the pentacene. With atomic force microscopic measurements, the purified pentacene thin film exhibits a larger grain size and film coverage, resulting in better crystallinity of the thin film structure due to the absence of the impurities. This is further confirmed by X-ray diffraction patterns, which show higher intensities for the purified pentacene. - Highlights: • We present in-situ characterization for pentacene field-effect transistors. • The hole mobility is improved after the sublimation process to purify the pentacene. • Purified pentacene thin film exhibits a larger grain size and film coverage. • Hole mobility of pentacene is improved from 0.13 to 0.23 cm{sup 2}/V s. • The discontinuity of grain boundary may cause the shift of threshold voltage.

  5. Stress-induced metallic behavior under magnetic field in Pr1-xCaxMnO3 (x=0.5 and 0.4) thin films (invited)

    International Nuclear Information System (INIS)

    Prellier, W.; Simon, Ch.; Mercey, B.; Hervieu, M.; Haghiri-Gosnet, A. M.; Saurel, D.; Lecoeur, Ph.; Raveau, B.

    2001-01-01

    We have investigated the role of the stress induced by the presence of the substrate in thin films of colossal magnetoresistive manganites on structural, resistive, and magnetic properties. Because of the strong coupling between the small structural distortions related to the charge ordering (CO) and the resistive properties, the presence of the substrate prevents the full development of the charge ordering in Pr 0.5 Ca 0.5 MnO 3 , especially in the very thin films. For thicker films, the CO state exists, but is not fully developed. Correlatively, the magnetic field which is necessary to suppress the CO is decreased drastically from 25 T to about 5 T on SrTiO 3 substrates. We have also investigated the influence of the doping level by studying the case of Pr 0.6 Ca 0.4 MnO 3 . [copyright] 2001 American Institute of Physics

  6. Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

    Science.gov (United States)

    Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

    2013-05-22

    Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

  7. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  8. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  9. Depolarization corrections to the coercive field in thin-film ferroelectrics

    International Nuclear Information System (INIS)

    Dawber, M; Chandra, P; Littlewood, P B; Scott, J F

    2003-01-01

    Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 μm to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

  10. Depolarization corrections to the coercive field in thin-film ferroelectrics

    CERN Document Server

    Dawber, M; Littlewood, P B; Scott, J F

    2003-01-01

    Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 mu m to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

  11. Thin film tritium dosimetry

    Science.gov (United States)

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  12. Temperature dependence of LRE-HRE-TM thin films

    Science.gov (United States)

    Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

    2003-04-01

    Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

  13. Application-related properties of giant magnetostrictive thin films

    International Nuclear Information System (INIS)

    Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

    2002-01-01

    In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

  14. Magnetic field dependence of the current flowing in the spin-coated chlorophyll thin films

    Science.gov (United States)

    Aji, J. R. P.; Kusumandari; Purnama, B.

    2018-03-01

    The magnetic dependence of the current flowing in the spin coated chlorophyll films on a patterned Cu PCB substrate has been presented. Chlorophyll was isolated from Spirulina sp and deposited by spin coated methods. The reducing of current by the change of magnetic field (magneto conductance effect) was performed by inducing the magnetic field parallel to the inplane of film at room temp. The magnetoconductance ratio decreases as the increase of voltage. It was indicated that the origin of carrier charge in chlorophyll films should be different with the carrier charge injection (electron).

  15. Current-Induced Joule Heating and Electrical Field Effects in Low Temperature Measurements on TIPS Pentacene Thin Film Transistors

    NARCIS (Netherlands)

    Nikiforov, G.O.; Venkateshvaran, D.; Mooser, S.; Meneau, A.; Strobel, T.; Kronemeijer, A.; Jiang, L.; Lee, M.J.; Sirringhaus, H.

    2016-01-01

    The channel temperature (Tch) of solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS pentacene) thin film transistors (TFTs) is closely monitored in real time during current–voltage (I–V) measurements carried out in a He exchange gas cryostat at various base temperatures (Tb)

  16. Magnetic field and temperature dependent measurements of hall coefficient in thermal evaporated Tin-Doped Cadmium Oxide Thin films

    International Nuclear Information System (INIS)

    Hamadi, O.; Shakir, N.; Mohammed, F.

    2010-01-01

    CdO:Sn thin films are deposited onto glass substrates by thermal evaporation under vacuum. The studied films are polycrystalline and have an NaCl structure. The Hall effect is studied for films with different thickness as substrates are maintained at different temperatures. The temperature dependence of the Hall mobility is also investigated. (authors)

  17. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    Science.gov (United States)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  18. Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

    Science.gov (United States)

    2012-02-28

    increas small at low uency shift ur hypothes former: Sin (output), w tion. Materia ansducer. Th e transform voltage gai rmer. Furth ansformer p ded...90 min, r 0 Oe to 300 ith increasin ity (GH-G0/G tic field. Th dels. The d agnetic fiel ion of actua rent materia se with high nce and new r. This

  19. A thin film passive magnetic field sensor operated at 425 MHz

    KAUST Repository

    Li, Bodong; Kosel, Jü rgen

    2013-01-01

    A passive, magnetic field sensor consisting of a 425 MHz surface acoustic wave (SAW) transponder loaded with a giant magnetoimpedance (GMI) element is developed. The transponder, consisting of two interdigital transducers (IDTs) and the GMI element, a multilayer structure composed of Ni80Fe 20/Cu/Ni80Fe20, are fabricated on a 128° Y-X cut LiNbO3 substrate. The integrated sensor is characterized with a network analyzer through an S-parameter measurement. Upon the application of a magnetic field, a maximum amplitude change and phase shift of 2.7 dB and 20 degree, respectively, are observed. Within the linear region, the magnetic sensitivity is 3870 dB/T and the resolution is 1.3 μT. © 2013 IEEE.

  20. A thin film passive magnetic field sensor operated at 425 MHz

    KAUST Repository

    Li, Bodong

    2013-06-01

    A passive, magnetic field sensor consisting of a 425 MHz surface acoustic wave (SAW) transponder loaded with a giant magnetoimpedance (GMI) element is developed. The transponder, consisting of two interdigital transducers (IDTs) and the GMI element, a multilayer structure composed of Ni80Fe 20/Cu/Ni80Fe20, are fabricated on a 128° Y-X cut LiNbO3 substrate. The integrated sensor is characterized with a network analyzer through an S-parameter measurement. Upon the application of a magnetic field, a maximum amplitude change and phase shift of 2.7 dB and 20 degree, respectively, are observed. Within the linear region, the magnetic sensitivity is 3870 dB/T and the resolution is 1.3 μT. © 2013 IEEE.

  1. Magnetoresistivity and Hall resistivity of a YBCO thin film in a tilted magnetic field

    International Nuclear Information System (INIS)

    Amirfeiz, M.; Cimberle, M. R.; Ferdeghini, C.; Giannini, E.; Grassano, G.; Marre', D.; Putti, M.; Siri, A. S.

    1997-01-01

    In this paper they present magnetoresistivity and Hall effect measurements performed on a YBCO epitaxial film as a function of the angle θ between the external magnetic field and the a-b planes. The resistivity and Hall effect measurements are analyzed in term of the general scaling approach proposed by Blatter and coworkers; the Hall conductivity data are examined to separate the contributions due to vortices and quasi particles

  2. From Thin Films to Monolayer, A Systematic Approach for BTBT Based Organic Field Effect Transistors

    OpenAIRE

    Yousefi Amin, Atefeh

    2013-01-01

    This work focuses on theoretical and experimental understanding of how low-voltage organic field effect transistors based on BTBT ([1] benzothieno[3,2-b][1]benzothiophene) operate. The focus is in deducing the electrical and interfacial landscape in the device, while using ultra-thin hybrid layers of AlOx/SAM (Self-Assembled Monolayer) as a dielectric. This thesis proposes a systematic study on an optimum solution for facing challenges in molecular and device properties. It first focuses on d...

  3. Plastic response of thin films due to thermal cycling

    NARCIS (Netherlands)

    Nicola, L.; van der Giessen, E.; Needleman, A.; Ahzi, S; Cherkaoui, M; Khaleel, MA; Zbib, HM; Zikry, MA; Lamatina, B

    2004-01-01

    Discrete dislocation simulations of thin films on semi-infinite substrates under cyclic thermal loading are presented. The thin film is modelled as a two-dimensional single crystal under plane strain conditions. Dislocations of edge character can be generated from initially present sources and glide

  4. Engineering stress in thin films for the field of bistable MEMS

    International Nuclear Information System (INIS)

    Ratnayake, Dilan; Gowrishetty, Usha R; McNamara, Shamus P; Walsh, Kevin M; Martin, Michael D; Porter, Daniel A; Berfield, Thomas A

    2015-01-01

    While stress-free and tensile films are well-suited for released in-plane MEMS designs, compressive films are needed for released out-of-plane MEMS structures such as buckled beams and diaphragms. This study presents a characterization of stress on a variety of sputtered and plasma-enhanced chemical vapour deposition (PECVD)-deposited films, including titanium tungsten, invar, silicon nitride and amorphous silicon, appropriate for the field of bistable MEMS. Techniques and strategies are presented (including varying substrate bias, pressure, temperature, and frequency multiplexing) for tuning internal stress across the spectrum from highly compressive (−2300 MPa) to highly tensile (1500 MPa). Conditions for obtaining stress-free films are also presented in this work. Under certain conditions during the PECVD deposition of amorphous silicon, interesting ‘micro-bubbles’ formed within the deposited films. Strategies to mitigate their formation are presented, resulting in a dramatic improvement in surface roughness quality from 667 nm root mean square (RMS) to 16 nm RMS. All final deposited films successfully passed the traditional ‘tape test’ for adhesion. (paper)

  5. Effect of different sol concentrations on the properties of nanocrystalline ZnO thin films grown on FTO substrates by sol-gel spin-coating

    International Nuclear Information System (INIS)

    Kim, Ikhyun; Kim, Younggyu; Nam, Giwoong; Kim, Dongwan; Park, Minju; Kim, Haeun; Lee, Wookbin; Leem, Jaeyoung; Kim, Jongsu; Kim, Jin Soo

    2014-01-01

    Nanocrystalline ZnO thin films grown on fluorine-doped tinoxide (FTO) substrates were fabricated using the spin-coating method. The structural and the optical properties of the ZnO thin films prepared using different sol concentrations were investigated by using field-emission scanning electron microscopy (FE-SEM), X-ray diffractometry (XRD), photoluminescence (PL) measurements, and ultraviolet-visible (UV-vis) spectrometry. The surface morphology of the ZnO thin films, as observed in the SEM images, exhibited a mountain-chain structure. XRD results indicated that the thin films were preferentially orientated along the direction of the c-axis and that the grain size of the ZnO thin films increased with increasing sol concentration. The PL spectra showed a strong ultraviolet emission peak at 3.22 eV and a broad orange emission peak at 2.0 eV. The intensities of deep-level emission (DLE) gradually increased with increasing sol concentration from 0.4 to 1.0 M. The transmittance spectra of the ZnO thin films showed that the ZnO thin films were transparent (∼85%) in the visible region and exhibited sharp absorption edges at 375 nm. Thus, The Urbach energy of ZnO thin films decreased with increasing sol concentration.

  6. Low-field tunnel-type magnetoresistance properties of polycrystalline and epitaxial La sub 0 sub . sub 6 sub 7 Sr sub 0 sub . sub 3 sub 3 MnO sub 3 thin films

    CERN Document Server

    Shim, I B; Choi, S Y

    2000-01-01

    The low-field tunnel-type magnetoresistance (TMB) properties of sol-gel derived polycrystalline and epitaxial La sub 0 sub . sub 6 sub 7 Sr sub 0 sub . sub 3 sub 3 MnO sub 3 (LSMO) thin films were investigated. The polycrystalline thin films were fabricated on Si (100) with a thermally oxidized SiO sub 2 layer while the epitaxial thin films were grown on LaAlO sub 3 (001) single-crystal substrates. The epitaxial thin films displayed both typical intrinsic colossal magnetoresistance (CMR) and abnormal extrinsic tunnel-type magnetoresistance behaviors. Tunnel-type MR ratio as high as 0.4% were observed in the polycrystalline thin films at a field of 120 Oe at room temperature (300 K) whereas the ratios were less than 0.1% for the epitaxial films in the same field range. The low-field tunnel-type MR of polycrystalline LSMO/SiO sub 2 ?Si (100) thin films originated from the behaviors of the grain-boundary properties.

  7. Electric and magnetic fields effects on the transport properties of La0.5Ca0.5MnO3 thin films

    International Nuclear Information System (INIS)

    Villafuerte, M.; Duhalde, S.; Rubi, D.; Bridoux, G.; Heluani, S.; Sirena, M.; Steren, L.

    2004-01-01

    The insulator to metal transition in manganites can be drastically influenced by internal factors, such as chemical composition, or under a variety of external perturbations, like magnetic or electric fields. In this work, the electrical resistance of La 0.5 Ca 0.5 MnO 3 thin films was investigated using different constant voltages. At low temperature the conductivity of the films is non-Ohmic and moderate electric fields results in resistivity switching to metastable states. Comparisons between the influence of magnetic and electric fields on transport measurements are reported

  8. Pulsed laser-deposited nanocrystalline GdB{sub 6} thin films on W and Re as field emitters

    Energy Technology Data Exchange (ETDEWEB)

    Suryawanshi, Sachin R.; More, Mahendra A. [Savitribai Phule Pune University, Department of Physics, Centre for Advanced Studies in Materials Science and Condensed Matter Physics, Pune (India); Singh, Anil K.; Sinha, Sucharita [Bhabha Atomic Research Centre, Laser and Plasma Technology Division, Trombay, Mumbai (India); Phase, Deodatta M. [UGC-DAE Consortium for Scientific Research Indore Centre, Indore (India); Late, Dattatray J. [CSIR-National Chemical Laboratory, Physical and Materials Chemistry Division, Pune (India)

    2016-10-15

    Gadolinium hexaboride (GdB{sub 6}) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of GdB{sub 6} on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of GdB{sub 6}/W and GdB{sub 6}/Re emitters were performed in a planar diode configuration at the base pressure ∝10{sup -8} mbar. The GdB{sub 6}/W and GdB{sub 6}/Re tip emitters deliver high emission current densities of ∝1.4 and 0.811 mA/cm{sup 2} at an applied field of ∝6.0 and 7.0 V/μm, respectively. The Fowler-Nordheim (F-N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F-N plots indicate that the PLD GdB{sub 6} coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the GdB{sub 6}/W and GdB{sub 6}/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the GdB{sub 6}/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ∝1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the GdB{sub 6}/W emitter are markedly different from that of GdB{sub 6}/Re emitter, which can be attributed to the growth of GdB{sub 6} films on W and Re substrates. (orig.)

  9. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.

    2012-06-22

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

  10. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  11. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  12. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  13. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  14. NMR characterization of thin films

    Science.gov (United States)

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  15. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  16. Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

    Science.gov (United States)

    Shijeesh, M. R.; Jayaraj, M. K.

    2018-04-01

    Cuprous (Cu2O) and cupric (CuO) oxide thin films have been deposited by radio frequency magnetron sputtering with two different oxygen partial pressures. The as-deposited copper oxide films were subjected to post-annealing at 300 °C for 30 min to improve the microstructural, morphological, and optical properties of thin films. Optical absorption studies revealed the existence of a large number of subgap states inside CuO films than Cu2O films. Cu2O and CuO thin film transistors (TFTs) were fabricated in an inverted staggered structure by using a post-annealed channel layer. The field effect mobility values of Cu2O and CuO TFTs were 5.20 × 10-4 cm2 V-1 s-1 and 2.33 × 10-4 cm2 V-1 s-1, respectively. The poor values of subthreshold swing, threshold voltage, and field effect mobility of the TFTs were due to the charge trap density at the copper oxide/dielectric interface as well as defect induced trap states originated from the oxygen vacancies inside the bulk copper oxide. In order to study the distribution of the trap states in the Cu2O and CuO active layer, the temperature dependent transfer characteristics of transistors in the temperature range between 310 K and 340 K were studied. The observed subgap states were found to be decreasing exponentially inside the bandgap, with CuO TFT showing higher subgap states than Cu2O TFT. The high-density hole trap states in the CuO channel are one of the plausible reasons for the lower mobility in CuO TFT than in Cu2O TFT. The origin of these subgap states was attributed to the impurities or oxygen vacancies present in the CuO channel layer.

  17. Fabrication of field-effect transistor utilizing oriented thin film of octahexyl-substituted phthalocyanine and its electrical anisotropy based on columnar structure

    Science.gov (United States)

    Ohmori, Masashi; Nakatani, Mitsuhiro; Kajii, Hirotake; Miyamoto, Ayano; Yoneya, Makoto; Fujii, Akihiko; Ozaki, Masanori

    2018-03-01

    Field-effect transistors with molecularly oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which characteristically form a columnar structure, have been fabricated, and the electrical anisotropy of C6PcH2 has been investigated. The molecularly oriented thin films of C6PcH2 were prepared by the bar-coating technique, and the uniform orientation in a large area and the surface roughness at a molecular level were observed by polarized spectroscopy and atomic force microscopy, respectively. The field effect mobilities parallel and perpendicular to the column axis of C6PcH2 were estimated to be (1.54 ± 0.24) × 10-2 and (2.10 ± 0.23) × 10-3 cm2 V-1 s-1, respectively. The electrical anisotropy based on the columnar structure has been discussed by taking the simulated results obtained by density functional theory calculation into consideration.

  18. Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

    Science.gov (United States)

    Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2018-04-01

    Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

  19. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  20. Field-effect measurements of mobility and carrier concentration of Cu2S colloidal quantum dot thin films after ligand exchange

    International Nuclear Information System (INIS)

    Brewer, Adam S.; Arnold, Michael S.

    2014-01-01

    Colloidal quantum dots (CQDs) of copper sulfide (Cu 2 S), an earth-abundant semiconductor, have a number of intriguing applications that require knowledge of their electrical properties. Depending on stoichiometry, mobility, and surface treatment, applications include photoabsorbers for solar cells, tunable plasmonics, and counter-electrodes for polysulfate electrolytes. However, there have not been any direct measurements of electrical properties in Cu 2 S CQD thin films. Here, we exchange as synthesized dodecanethiol ligands with short ethanedithiol or ethylenediamine ligands to form thin films of coupled Cu 2 S CQDs. The mobility and carrier concentration were found to vary by ligand treatment from 10 −5 cm 2 /Vs and 10 19 holes/cm 3 for ethanedithiol ligands to 10 −3 cm 2 /Vs and 10 20 holes/cm 3 for ethylenediamine. These results are consistent with the carrier concentrations inferred from sub-bandgap surface-plasmon-resonances measured by infrared spectroscopy. These results will be useful when designing Cu 2 S materials for future applications. - Highlights: • Colloidal Cu2S quantum dots were synthesized and characterized. • Ligand exchange was performed to alter the Cu2S nanocrystal properties. • Ligand exchange was studied using photoluminescence and infrared spectroscopy. • Field effect mobility and carrier concentration were directly measured. • Carrier concentration was compared to estimates from surface plasmon resonances

  1. Electric field dependent photocurrent generation in a thin-film organic photovoltaic device with a [70]fullerene-benzodifuranone dyad.

    Science.gov (United States)

    Ulmann, Pirmin A; Tanaka, Hideyuki; Matsuo, Yutaka; Xiao, Zuo; Soga, Iwao; Nakamura, Eiichi

    2011-12-21

    A [70]fullerene-benzodifuranone acceptor dyad synthesized by a Ag⁺-mediated coupling reaction was used to construct a thin-film organic solar cell. The fullerene and the benzodifuranone dye in the dyad have close-lying LUMO levels in the range of 3.7-3.9 eV, so that energy transfer from the dye to the fullerene can take place. A p-n heterojunction photovoltaic device consisting of a tetrabenzoporphyrin and a [70]fullerene-benzodifuranone dyad showed a weak but discernible contribution from light absorption of the dyad to the photocurrent under both a positive and a negative effective bias. These results indicate that the benzodifuranone moiety attached to the acceptor contributes to light-harvesting by energy transfer.

  2. Field effect of screened charges: electrical detection of peptides and proteins by a thin-film resistor.

    Science.gov (United States)

    Lud, Simon Q; Nikolaides, Michael G; Haase, Ilka; Fischer, Markus; Bausch, Andreas R

    2006-02-13

    For many biotechnological applications the label-free detection of biomolecular interactions is becoming of outstanding importance. In this Article we report the direct electrical detection of small peptides and proteins by their intrinsic charges using a biofunctionalized thin-film resistor. The label-free selective and quantitative detection of small peptides and proteins is achieved using hydrophobized silicon-on-insulator (SOI) substrates functionalized with lipid membranes that incorporate metal-chelating lipids. The response of the nanometer-thin conducting silicon film to electrolyte screening effects is taken into account to determine quantitatively the charges of peptides. It is even possible to detect peptides with a single charge and to distinguish single charge variations of the analytes even in physiological electrolyte solutions. As the device is based on standard semiconductor technologies, parallelization and miniaturization of the SOI-based biosensor is achievable by standard CMOS technologies and thus a promising basis for high-throughput screening or biotechnological applications.

  3. Large Area Thin Film Silicon: Synergy between Displays and Solar Cells

    NARCIS (Netherlands)

    Schropp, R.E.I.

    2012-01-01

    Thin-film silicon technology has changed our society, owing to the rapid advance of its two major application fields in communication (thin-film displays) and sustainable energy (thin-film solar cells). Throughout its development, advances in these application fields have always benefitted each

  4. Influence of applied electric field annealing on the microwave properties of (Ba0.5Sr0.5)TiO3 thin films

    Science.gov (United States)

    Cho, Kwang-Hwan; Lee, Chil-Hyoung; Kang, Chong-Yun; Yoon, Seok-Jin; Lee, Young-Pak

    2007-04-01

    The effect of heat treatment in electric field on the structure and dielectric properties at microwave range of rf magnetron sputtering derived (Ba0.5Sr0.5)TiO3 thin films have been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability. The increased out-of-plane lattice constant in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti3+ ions caused by electric annealing could induce the formation of BaTiO3-like regions, which are ferroelectric at room temperature. And in dielectric loss, as the Ti-O bonding lengths increase, the energy scattering on the ferroelectric mode also increases. So, the value of dielectric loss is slightly increased.

  5. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

    Science.gov (United States)

    Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

    2014-12-24

    We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

  6. Flexible thin film magnetoimpedance sensors

    International Nuclear Information System (INIS)

    Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-01-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  7. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  8. Drying Temperature Dependence of Sol-gel Spin Coated Bilayer Composite ZnO/TiO2 Thin Films for Extended Gate Field Effect Transistor pH Sensor

    Science.gov (United States)

    Rahman, R. A.; Zulkefle, M. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2018-03-01

    This study presents an investigation on zinc oxide (ZnO) and titanium dioxide (TiO2) bilayer film applied as the sensing membrane for extended-gate field effect transistor (EGFET) for pH sensing application. The influences of the drying temperatures on the pH sensing capability of ZnO/TiO2 were investigated. The sensing performance of the thin films were measured by connecting the thin film to a commercial MOSFET to form the extended gates. By varying the drying temperature, we found that the ZnO/TiO2 thin film dried at 150°C gave the highest sensitivity compared to other drying conditions, with the sensitivity value of 48.80 mV/pH.

  9. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

    2017-01-01

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  10. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  11. High temperature superconductor thin films

    International Nuclear Information System (INIS)

    Correra, L.

    1992-01-01

    Interdisciplinary research on superconducting oxides is the main focus of the contributors in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved. The papers are presented in five chapters, subsequently on properties, film growth and processing, substrates and multilayers, structural characterization, and applications

  12. Effect of large compressive strain on low field electrical transport in La0.88Sr0.12MnO3 thin films

    International Nuclear Information System (INIS)

    Prasad, Ravikant; Gaur, Anurag; Siwach, P K; Varma, G D; Kaur, A; Singh, H K

    2007-01-01

    We have investigated the effect of large in-plane compressive strain on the electrical transport in La 0.88 Sr 0.12 MnO 3 in thin films. For achieving large compressive strain, films have been deposited on single crystal LaAlO 3 (LAO, a = 3.798 A) substrate from a polycrystalline bulk target having average in-plane lattice parameter a av = (a b + b b )/2 = 3.925 A. The compressive strain was further relaxed by varying the film thickness in the range ∼6-75 nm. In the film having least thickness (∼6 nm) large increase (c = 3.929 A) in the out-of-plane lattice parameter is observed which gradually decreases towards the bulk value (c bulk = 3.87 A) for ∼75 nm thick film. This shows that the film having the least thickness is under large compressive strain, which partially relaxes with increasing film thickness. The T IM of the bulk target ∼145 K goes up to ∼235 K for the ∼6 nm thin film and even for partially strain relaxed ∼75 nm thick film T IM is as high as ∼200 K. This enhancement in T IM is explained in terms of suppression of Jahn-Teller distortion of the MnO 6 octahedra by the large in-plane compressive strain. We observe a large enhancement in the low field magnetoresistance (MR) just below T IM in the films having partial strain relaxation. Thick films of 6 and 20 nm have MR ∼14% at 3 kOe that almost doubles in 35 nm film to ∼27%. Similar enhancement is also obtained in the case of the temperature coefficient of resistivity. The near doubling of low field MR is explained in terms of delocalization of weakly localized carriers around T IM by small magnetic fields

  13. Microstructure of Thin Films

    Science.gov (United States)

    1990-02-07

    Proceedings, Thin film Technologies II, 652, 256-263, (1986) B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier, "In situ and air index measurements...34 SPIE Proceedings, "Optical Components and Systems", 805, 128 (1987) 11 B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier. "In situ and air index...aT , m..a, lot,, o ,,f,02,d I4 k -1-1..... autocovariance lengths, less than 0.5 um, indicate that , 514n, ob0 o p’,Ofclllc....,,o,,oy0,1- agua sblrt

  14. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  15. Application of thin-film breakdown counters for characterization of neutron field of the VESUVIO instrument at the ISIS spallation source

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, A.N. [V.G. Khlopin Radium Institute, St. Petersburg (Russian Federation); Pietropaolo, A., E-mail: antonino.pietropaolo@roma2.infn.it [CNISM UdR Tor Vergata, and Centro NAST Roma, Italy Scientifica 1 I-00133 Roma Italy (Italy); Prokofiev, A.V. [The Svedberg Laboratory, Uppsala University, Uppsala (Sweden); Rodionova, E.E. [V.G. Khlopin Radium Institute, St. Petersburg (Russian Federation); Frost, C.D.; Ansell, S.; Schooneveld, E.M. [ISIS Facility, Rutherford Appleton Laboratory, Chilton (United Kingdom); Gorini, G. [Dipartimento di Fisica ' G. Occhialini,' Universita degli Studi di Milano-Bicocca, Milano (Italy)

    2012-09-21

    The high-energy neutron field of the VESUVIO instrument at the ISIS facility has been characterized using the technique of thin-film breakdown counters (TFBC). The technique utilizes neutron-induced fission reactions of {sup nat}U and {sup 209}Bi with detection of fission fragments by TFBCs. Experimentally determined count rates of the fragments are Almost-Equal-To 50% higher than those calculated using spectral neutron flux simulated with the MCNPX code. This work is a part of the project to develop ChipIr, a new dedicated facility for the accelerated testing of electronic components and systems for neutron-induced single event effects in the new Target Station 2 at ISIS. The TFBC technique has shown to be applicable for on-line monitoring of the neutron flux in the neutron energy range 1-800 MeV at the position of the device under test (DUT).

  16. Application of thin-film breakdown counters for characterization of neutron field of the VESUVIO instrument at the ISIS spallation source

    Science.gov (United States)

    Smirnov, A. N.; Pietropaolo, A.; Prokofiev, A. V.; Rodionova, E. E.; Frost, C. D.; Ansell, S.; Schooneveld, E. M.; Gorini, G.

    2012-09-01

    The high-energy neutron field of the VESUVIO instrument at the ISIS facility has been characterized using the technique of thin-film breakdown counters (TFBC). The technique utilizes neutron-induced fission reactions of natU and 209Bi with detection of fission fragments by TFBCs. Experimentally determined count rates of the fragments are ≈50% higher than those calculated using spectral neutron flux simulated with the MCNPX code. This work is a part of the project to develop ChipIr, a new dedicated facility for the accelerated testing of electronic components and systems for neutron-induced single event effects in the new Target Station 2 at ISIS. The TFBC technique has shown to be applicable for on-line monitoring of the neutron flux in the neutron energy range 1-800 MeV at the position of the device under test (DUT).

  17. Application of thin-film breakdown counters for characterization of neutron field of the VESUVIO instrument at the ISIS spallation source

    International Nuclear Information System (INIS)

    Smirnov, A.N.; Pietropaolo, A.; Prokofiev, A.V.; Rodionova, E.E.; Frost, C.D.; Ansell, S.; Schooneveld, E.M.; Gorini, G.

    2012-01-01

    The high-energy neutron field of the VESUVIO instrument at the ISIS facility has been characterized using the technique of thin-film breakdown counters (TFBC). The technique utilizes neutron-induced fission reactions of nat U and 209 Bi with detection of fission fragments by TFBCs. Experimentally determined count rates of the fragments are ≈50% higher than those calculated using spectral neutron flux simulated with the MCNPX code. This work is a part of the project to develop ChipIr, a new dedicated facility for the accelerated testing of electronic components and systems for neutron-induced single event effects in the new Target Station 2 at ISIS. The TFBC technique has shown to be applicable for on-line monitoring of the neutron flux in the neutron energy range 1–800 MeV at the position of the device under test (DUT).

  18. Mechanism of Crystallization and Implications for Charge Transport in Poly(3-ethylhexylthiophene) Thin Films

    KAUST Repository

    Duong, Duc T.

    2014-04-09

    In this work, crystallization kinetics and aggregate growth of poly(3-ethylhexylthiophene) (P3EHT) thin films are studied as a function of film thickness. X-ray diffraction and optical absorption show that individual aggregates and crystallites grow anisotropically and mostly along only two packing directions: the alkyl stacking and the polymer chain backbone direction. Further, it is also determined that crystallization kinetics is limited by the reorganization of polymer chains and depends strongly on the film thickness and average molecular weight. Time-dependent, field-effect hole mobilities in thin films reveal a percolation threshold for both low and high molecular weight P3EHT. Structural analysis reveals that charge percolation requires bridged aggregates separated by a distance of ≈2-3 nm, which is on the order of the polymer persistence length. These results thus highlight the importance of tie molecules and inter-aggregate distance in supporting charge percolation in semiconducting polymer thin films. The study as a whole also demonstrates that P3EHT is an ideal model system for polythiophenes and should prove to be useful for future investigations into crystallization kinetics. Recrystallization kinetics and its relationship to charge transport in poly(3-ethylhexylthiophene) (P3EHT) thin films are investigated using a combination of grazing incidence X-ray diffraction, optical absorption, and field-effect transistor measurements. These results show that thin film crystallization kinetics is limited by polymer chain reorganization and that charge percolation depends strongly on the edge-to-edge distance between aggregates. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Thin films: Past, present, future

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K

    1995-04-01

    This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

  20. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  1. Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

    Science.gov (United States)

    Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

    2018-02-01

    Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

  2. Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

    Directory of Open Access Journals (Sweden)

    Xiaoyu Bi

    2018-02-01

    Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

  3. Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency

    International Nuclear Information System (INIS)

    Ilyas, Usman; Rawat, R.S.; Roshan, G.; Tan, T.L.; Lee, P.; Springham, S.V.; Zhang, Sam; Fengji Li; Chen, R.; Sun, H.D.

    2011-01-01

    The structural and photoluminescence analyses were performed on un-doped and Mn doped ZnO thin films grown on Si (1 0 0) substrate by pulsed laser deposition (PLD) and annealed at different post-deposition temperatures (500-800 deg. C). X-ray diffraction (XRD), employed to study the structural properties, showed an improved crystallinity at elevated temperatures with a consistent decrease in the lattice parameter 'c'. The peak broadening in XRD spectra and the presence of Mn 2p3/2 peak at ∼640 eV in X-ray Photoelectron Spectroscopic (XPS) spectra of the doped thin films confirmed the successful incorporation of Mn in ZnO host matrix. Extended near band edge emission (NBE) spectra indicated the reduction in the concentration of the intrinsic surface traps in comparison to the doped ones resulting in improved optical transparency. Reduced deep level emission (DLE) spectra in doped thin films with declined PL ratio validated the quenching of the intrinsic surface traps thereby improving the optical transparency and the band gap, essential for optoelectronic and spintronic applications. Furthermore, the formation and uniform distribution of nano-sized grains with improved surface features of Mn-doped ZnO thin films were observed in Field Emission Scanning Electron Microscopy (FESEM) images.

  4. Domain switching of fatigued ferroelectric thin films

    Science.gov (United States)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-05-01

    We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  5. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  6. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  7. Effects of Post Heat Treatments on ZnO Thin-Films Grown on Zn-coated Teflon Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ikhyun; Nam, Giwoong; Lee, Cheoleon; Kim, Dongwhan; Choi, Hyonkwang; Kim, Yangsoo; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of); Kim, Jin Soo [Chonbuk National University, Jeonju (Korea, Republic of); Kim, Jong Su [Yeungnam University, Gyeongsan (Korea, Republic of); Son, Jeong-Sik [Kyungwoon University, Gumi (Korea, Republic of)

    2015-06-15

    ZnO thin films were first grown on Zn-coated Teflon substrates using a spin-coating method, with various post-heating temperatures. The structural and optical properties of the ZnO thin films were then investigated using field-effect scanning-electron microscopy, X-ray diffractometry, and photoluminescence (PL) spectroscopy. The surface morphology of these ZnO thin films exhibited dendritic structures. With increasing post-heating temperature, all samples preferentially exhibited preferential c-axis orientation and increased residual tensile stress. All of the films exhibited preferential c-axis orientation, and the residual tensile stress of those increased with increasing post-heating temperature. The near-band-edge emission (NBE) peaks were red-shifted after post-heating treatment at 400 ℃. The intensity of the deep-level emission (DLE) peaks gradually decreased with increasing post- heating temperature. Moreover, the narrowest ‘full width at half maximum’ (FWHM) and the highest intensity ratio of the NBE to the DLE for thin films, were observed after post-heating at 400 ℃. The ZnO thin films fabricated with the 400 ℃ post-heating process provided the highest crystallinity and optical properties.

  8. External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)

    Science.gov (United States)

    Pradipto, Abdul-Muizz; Akiyama, Toru; Ito, Tomonori; Nakamura, Kohji

    2018-01-01

    The effects of applying external electric fields to the anomalous and spin Hall conductivities in Fe thin-film models with different layer thicknesses on MgO(001) are investigated by using first-principles calculations. We observe that, for the considered systems, the application of positive electric field associated with the accumulation of negative charges on the Fe side generally decreases (increases) the anomalous (spin) Hall conductivities. The mapping of the Hall conductivities within the two-dimensional Brillouin zone shows that the electric-field-induced modifications are related to the modification of the band structures of the atoms at the interface with the MgO substrate. In particular, the external electric field affects the Hall conductivities via the modifications of the dx z,dy z orbitals, in which the application of positive electric field pushes the minority-spin states of the dx z,dy z bands closer to the Fermi level. Better agreement with the anomalous Hall conductivity for bulk Fe and a more realistic scenario for the electric field modification of Hall conductivities are obtained by using the thicker layers of Fe on MgO (Fe3/MgO and Fe5/MgO).

  9. Size and dimensionality effects in superconducting Mo thin films

    International Nuclear Information System (INIS)

    Fabrega, L; Gil, O; Camon, A; Parra-BorderIas, M; Fernandez-MartInez, I; Costa-Kraemer, J L; Briones, F; Sese, J; Gonzalez-Arrabal, R

    2011-01-01

    Molybdenum is a low T c , type I superconductor whose fundamental properties are poorly known. Its importance as an essential constituent of new high performance radiation detectors, the so-called transition edge sensors (TESs) calls for better characterization of this superconductor, especially in thin film form. Here we report on a study of the basic superconducting features of Mo thin films as a function of their thickness. The resistivity is found to rise and the critical temperature decreases on decreasing film thickness, as expected. More relevant, the critical fields along and perpendicular to the film plane are markedly different, thickness dependent and much larger than the thermodynamic critical field of Mo bulk. These results are consistent with a picture of type II 2D superconducting films, and allow estimates of the fundamental superconducting lengths of Mo. The role of morphology in determining the 2D and type II character of the otherwise type I molybdenum is discussed. The possible consequences of this behaviour on the performance of radiation detectors are also addressed.

  10. Thermally activated dissipation and critical field Hc2 in c-oriented high-Tc Bi-Pb-Sr-Ca-Cu-O thin film

    International Nuclear Information System (INIS)

    Wang, Y.H.; Cui, C.G.; Zhang, Y.Z.; Li, S.L.; Li, J.; Li, L.

    1991-01-01

    A set of resistivity-temperature (R-T) curves measured under various applied fields in a high-T c Bi-Pb-Sr-Ca-Cu-O thin film which has a zero-resistance temperature T c0 of 110 K is reported. The remarkable broadening of the transition width is discussed under the flux-creep model, considering the very short coherence length of this oxide superconductor. The resistivity is thermally activated, which is consistent with the Arrhenius law with a magnetic field and orientation-dependent activation energy U 0 (H,Θ). The U 0 (H,Θ) has a very high value of 381.6 meV under a field of 0.1 T parallel to the c axis. The upper critical field H c2 determined from these R-T curves shows high values and the effect of flux creep to the H c2 (0) is examined by the irreversible behavior with the ''giant'' flux-creep model

  11. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  12. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  13. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  14. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  15. XRay Study of Transfer Printed Pentacene Thin Films

    International Nuclear Information System (INIS)

    Shao, Y.; Solin, S. A.; Hines, D. R.; Williams, E. D.

    2007-01-01

    We investigated the structural properties and transfer properties of pentacene thin films fabricated by thermal deposition and transfer printing onto SiO2 and plastic substrates, respectively. The dependence of the crystallite size on the printing time, temperature and pressure were measured. The increases of crystalline size were observed when pentacene thin films were printed under specific conditions, e.g. 120 deg. C and 600 psi and can be correlated with the improvement of the field effect mobility of pentacene thin-film transistors

  16. Tunable strain effect and ferroelectric field effect on the electronic transport properties of La0.5Sr0.5CoO3 thin films

    Science.gov (United States)

    Zhu, Q. X.; Wang, W.; Zhao, X. Q.; Li, X. M.; Wang, Y.; Luo, H. S.; Chan, H. L. W.; Zheng, R. K.

    2012-05-01

    Tensiled La0.5Sr0.5CoO3 (LSCO) thin films were epitaxially grown on piezoelectric 0.67Pb (Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) single-crystal substrates. Due to the epitaxial nature of the interface, the lattice strain induced by ferroelectric poling or the converse piezoelectric effect in the PMN-PT substrate is effectively transferred to the LSCO film and thus reduces the tensile strain of the film, giving rise to a decrease in the resistivity of the LSCO film. We discuss these strain effects within the framework of the spin state transition of Co3+ ions and modification of the electronic bandwidth that is relevant to the induced strain. By simultaneously measuring the strain and the resistivity, quantitative relationship between the resistivity and the strain was established for the LSCO film. Both theoretical calculation and experimental results demonstrate that the ferroelectric field effect at room temperature in the LSCO/PMN-PT field-effect transistor is minor and could be neglected. Nevertheless, with decreasing temperature, the ferroelectric field effect competes with the strain effect and plays a more and more important role in influencing the electronic transport properties of the LSCO film, which we interpreted as due to the localization of charge carriers at low temperature.

  17. The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors

    International Nuclear Information System (INIS)

    Lee, Sunghwan; Park, Hongsik; Paine, David C.

    2012-01-01

    The effect of contact resistance on the measurement of the field effect mobility of compositionally homogeneous channel indium zinc oxide (IZO)/IZO metallization thin film transistors (TFTs) is reported. The TFTs studied in this work operate in depletion mode as n-channel field effect devices with a field effect mobility calculated in the linear regime (μ FE ) of 20 ± 1.9 cm 2 /Vs and similar of 18 ± 1.3 cm 2 /Vs when calculated in the saturation regime (μ FE sat ). These values, however, significantly underestimate the channel mobility since a large part of the applied drain voltage is dropped across the source/drain contact interface. The transmission line method was employed to characterize the contact resistance and it was found that the conducting-IZO/semiconducting-IZO channel contact is highly resistive (specific contact resistance, ρ C > 100 Ωcm 2 ) and, further, this contact resistance is modulated with applied gate voltage. Accounting for the contact resistance (which is large and modulated by gate voltage), the corrected μ FE is shown to be 39 ± 2.6 cm 2 /Vs which is consistent with Hall mobility measurements of high carrier density IZO.

  18. Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.

    Science.gov (United States)

    Park, Jeong Woo; Tak, Young Jun; Na, Jae Won; Lee, Heesoo; Kim, Won-Gi; Kim, Hyun Jae

    2018-05-16

    We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in IGZO films and oxygen atoms in air by SMFs or RMFs can be expected to enhance metal-oxide (M-O) bonds, even at low temperature (150 °C), through attraction of metal and oxygen atoms having their magnetic moments aligned in the same direction. Compared to IGZO TFTs with only thermal treatment at 300 °C, IGZO TFTs under an RMF (1150 rpm) at 150 °C show superior or comparable characteristics: field-effect mobility of 12.68 cm 2 V -1 s -1 , subthreshold swing of 0.37 V dec -1 , and on/off ratio of 1.86 × 10 8 . Although IGZO TFTs under an SMF (0 rpm) can be activated at 150 °C, the electrical performance is further improved in IGZO TFTs under an RMF (1150 rpm). These improvements of IGZO TFTs under an RMF (1150 rpm) are induced by increases in the number of M-O bonds due to enhancement of the magnetic interaction per unit time as the rpm value increases. We suggest that this new process of activating IGZO TFTs at low temperature widens the choice of substrates in flexible or transparent devices.

  19. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    Science.gov (United States)

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  20. Characterization of organic thin films

    CERN Document Server

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  1. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  2. Tailoring electronic structure of polyazomethines thin films

    OpenAIRE

    J. Weszka; B. Hajduk; M. Domański; M. Chwastek; J. Jurusik; B. Jarząbek; H. Bednarski; P. Jarka

    2010-01-01

    Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD) can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic ...

  3. Improving the performance of nickel-coated fluorine-doped tin oxide thin films by magnetic-field-assisted laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bao-jia, E-mail: li_bjia@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Kong, Xia; Cai, Yun-long; Zhang, Jie-lu [Jiangsu Tailong Reduction Box Co. Ltd., Taixing 225400 (China)

    2015-10-01

    Highlights: • Ni/FTO films were prepared by sputtering Ni layers on commercial FTO glass. • The as-prepared Ni/FTO films underwent magnetic-field-assisted laser annealing. • Magnetic field and laser fluence were crucial for improving quality of the films. • All Ni/FTO films displayed enhanced compactness after magnetic laser annealing. • Magnetic laser annealing using a fluence of 0.9 J/cm{sup 2} led to the best film quality. - Abstract: Nickel-coated fluorine-doped tin oxide (Ni/FTO) thin films were prepared by sputtering Ni layers on commercial FTO glass. The as-prepared Ni/FTO films underwent nanosecond pulsed laser annealing in an external magnetic field (0.4 T). The effects of the presence of magnetic field and laser fluence on surface morphology, crystal structure and photoelectric properties of the films were investigated. All the films displayed enhanced compactness after magnetic-field-assisted laser annealing. It was notable that both crystallinity and grain size of the films gradually increased with increasing laser fluence from 0.6 to 0.9 J/cm{sup 2}, and then decreased slightly with an increase in laser fluence to 1.1 J/cm{sup 2}. As a result, the film obtained by magnetic-field-assisted laser annealing using a fluence of 0.9 J/cm{sup 2} had the best overall photoelectric property with an average transmittance of 81.2%, a sheet resistance of 5.5 Ω/sq and a figure of merit of 2.27 × 10{sup −2} Ω{sup −1}, outperforming that of the film obtained by pure laser annealing using the same fluence.

  4. Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors

    Science.gov (United States)

    Bouregba, R.; Sama, N.; Soyer, C.; Poullain, G.; Remiens, D.

    2010-05-01

    Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to study of size effect by R. Bouregba et al., [J. Appl. Phys. 106, 044101 (2009)]. Deterioration of the ferroelectric properties, consecutive to fatigue cycling and thickness downscaling, presents very similar characteristics and allows drawing up a direct correlation between the two phenomena. Namely, interface depolarization field (Edep) resulting from interface chemistry is found to be the common denominator, fatigue phenomena is manifestation of strengthen of Edep in the course of time. Change in dielectric permittivity, in remnant and coercive values as well as in the shape of hysteresis loops are mediated by competition between degradation of dielectric properties of the interfaces and possible accumulation of interface space charge. It is proposed that presence in the band gap of trap energy levels with large time constant due to defects in small nonferroelectric regions at the electrode—PZT film interfaces ultimately governs the aging process. Size effect and aging process may be seen as two facets of the same underlying mechanism, the only difference lies in the observation time of the phenomena.

  5. Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti-Cu thin films

    International Nuclear Information System (INIS)

    Stranak, Vitezslav; Hippler, Rainer; Cada, Martin; Hubicka, Zdenek; Tichy, Milan

    2010-01-01

    Time-resolved comparative study of dual magnetron sputtering (dual-MS) and dual high power impulse magnetron sputtering (dual-HiPIMS) systems arranged with closed magnetic field is presented. The dual-MS system was operated with a repetition frequency 4.65 kHz (duty cycle ≅50%). The frequency during dual-HiPIMS is lower as well as its duty cycle (f=100 Hz, duty 1%). Different metallic targets (Ti, Cu) and different cathode voltages were applied to get required stoichiometry of Ti-Cu thin films. The plasma parameters of the interspace between magnetrons in the substrate position were investigated by time-resolved optical emission spectroscopy, Langmuir probe technique, and measurement of ion fluxes to the substrate. It is shown that plasma density as well as ion flux is higher about two orders of magnitude in dual-HiPIMS system. This fact is partially caused by low diffusion of ionized sputtered particles (Ti + ,Cu + ) which creates a preionized medium.

  6. Structural and electrical studies on sol-gel derived spun TiO2 thin films

    International Nuclear Information System (INIS)

    Hassan, A K; Chaure, N B; Ray, A K; Nabok, A V; Habesch, S

    2003-01-01

    Titanium dioxide thin films were prepared by spin coating of sol precursor onto microscopic glass slides, silicon and indium tin oxide (ITO) coated glass substrates. Spin speed was varied between 1000 and 6000 rpm. From the morphological analysis, it is found that thin films spun with speed ω≤4000 rpm assume higher ordered structure than those spun at a speed higher than 4000 rpm. Conduction at low voltages is believed to be variable range hopping at temperatures T a = 0.46 eV below the conduction band edge becomes dominant at temperatures higher than 220 K. At high field charge transport is due to trap-controlled space charge limited mechanism. Traps with a density N t ∼1x10 22 m -3 are thought to be situated at energy level E t 0.3 eV below the conduction band and are associated with film nonstoichiometry and interface states

  7. Microscopic local fatigue in PZT thin films

    International Nuclear Information System (INIS)

    Li, B S; Wu, A; Vilarinho, P M

    2007-01-01

    The reduction in switchable polarization during fatigue largely limits the application of PZT thin films in ferroelectric nonvolatile memories. So, it is very important to understand the fatigue mechanism in PZT films, especially at a nanoscale level. In this paper, nanoscale fatigue properties in PZT thin films have been studied by piezoresponse force microscopy and local piezoloops. It has been found that a piezoloop obtained on a fatigued point exhibits a much more pinched shape and a local imprint phenomenon is observed after severe fatigue. Furthermore, the domain structure evolves from a simple single-peak profile to a complex fluctuant one. However, there is only some shift of the piezoloop when a unipolar field with the same amplitude is applied on the film. The available experimental data show that there exist obvious domain wall pinning and injection of electrons into the film during fatigue. Finally, a schematic illustration is suggested to explain the possible fatigue mechanism

  8. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  9. Effects of electric-field-induced piezoelectric strain on the electronic transport properties of La0.9Ce0.1MnO3 thin films

    International Nuclear Information System (INIS)

    Zheng, R.K.; Dong, S.N.; Wu, Y.Q.; Zhu, Q.X.; Wang, Y.; Chan, H.L.W.; Li, X.M.; Luo, H.S.; Li, X.G.

    2012-01-01

    The authors constructed multiferroic structures by growing La 0.9 Ce 0.1 MnO 3 (LCEMO) thin films on piezoelectric 0.68Pb(Mg 1/3 Nb 2/3 )O 3 –0.32PbTiO 3 (PMN-PT) single-crystal substrates. Due to the efficient elastic coupling at the interface, the electric-field-induced piezoelectric strain in PMN-PT substrates is effectively transferred to LCEMO films and thus, leads to a decrease in the resistance and an increase in the magnetoresistance of the films. Particularly, it was found that the resistance-strain coefficient [(ΔR/R) film /(Δε zz ) film ] of the LCEMO film was considerably enhanced by the application of magnetic fields, demonstrating strong coupling between the lattice and the spin degrees of freedom. (ΔR/R) film /(Δε zz ) film at 122 K was enhanced by ∼ 28.8% by a magnetic field of 1.2 T. An analysis of the overall results demonstrates that the phase separation is crucial to understand strain-mediated modulation of electronic transport properties of manganite film/PMN-PT multiferroic structures. - Highlights: ► La 0.9 Ce 0.1 Mn O3 films were epitaxially grown on piezoelectric single crystals. ► Piezoelectric strain influences the electronic transport properties of films. ► Magnetic field enhances the piezoelectric strain effect. ► Phase separation is crucial to understand the piezoelectric strain effect.

  10. Nanocomposite thin films for triggerable drug delivery.

    Science.gov (United States)

    Vannozzi, Lorenzo; Iacovacci, Veronica; Menciassi, Arianna; Ricotti, Leonardo

    2018-05-01

    Traditional drug release systems normally rely on a passive delivery of therapeutic compounds, which can be partially programmed, prior to injection or implantation, through variations in the material composition. With this strategy, the drug release kinetics cannot be remotely modified and thus adapted to changing therapeutic needs. To overcome this issue, drug delivery systems able to respond to external stimuli are highly desirable, as they allow a high level of temporal and spatial control over drug release kinetics, in an operator-dependent fashion. Areas covered: On-demand drug delivery systems actually represent a frontier in this field and are attracting an increasing interest at both research and industrial level. Stimuli-responsive thin films, enabled by nanofillers, hold a tremendous potential in the field of triggerable drug delivery systems. The inclusion of responsive elements in homogeneous or heterogeneous thin film-shaped polymeric matrices strengthens and/or adds intriguing properties to conventional (bare) materials in film shape. Expert opinion: This Expert Opinion review aims to discuss the approaches currently pursued to achieve an effective on-demand drug delivery, through nanocomposite thin films. Different triggering mechanisms allowing a fine control on drug delivery are described, together with current challenges and possible future applications in therapy and surgery.

  11. Formation of CdS thin films in a chemical bath environment under the action of an external magnetic field

    International Nuclear Information System (INIS)

    Vaskes-Luna, Kh.G.; Zekhe, A.; Nhukhil'o-Garsiya, M.P.; Starostenko, O.

    2000-01-01

    The effect of external magnetic field on obtaining thin CdS films on glass sub layers through the method of chemical deposition from the cadmium chloride aqueous solution is studied. The intensity and direction of the magnetic field during deposition obviously affect the number of physical properties of polycrystalline films: thickness, grain size and optical quality. The films characteristics are studied through an atomic-power microscope, light absorption spectroscopy and conductometry in darkness. The results obtained are interpreted on the basis of notions on the cadmium and sulfur specific interaction in the chemical bath with a magnetic field [ru

  12. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  13. Flexible magnetic thin films and devices

    Science.gov (United States)

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  14. Structural and morphological modifications of the Co-thin films caused by magnetic field and pH variation

    International Nuclear Information System (INIS)

    Franczak, Agnieszka; Levesque, Alexandra; Bohr, Frederic; Douglade, Jacques; Chopart, Jean-Paul

    2012-01-01

    Highlights: ► Co electrodeposits were obtained at high electrolyte temperature under applied magnetic field. ► The temperature is commonly used in the industrial process. ► The effects of magnetic field up to 1 T and pH on structure and morphology were investigated. ► The high process temperature enhances HER which is diminishing by the magnetic field application. - Abstract: Cobalt films were deposited by use of the electrochemical process from a cobalt (II) sulfate solution on a titanium electrode and characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The experiments at electrolyte temperature of 50 °C were performed which is commonly used in the industrial process. The effects of pH and low uniform magnetic field up to 1 T on structure and morphology changes were investigated. The detected phase composition indicates the presence of both phases: hexagonal centered packed and face centered cubic independent on the pH value and the applied magnetic field amplitude. Calculation of the orientation index of Co phase shows the preferential orientation in the films obtained at higher pH. SEM micro-imagines have shown the nucleus shape transition from coarse-grained to needle-shaped dependent on the application of B-field as well as on the pH variation in the case of higher pH level. Co-films obtained from the electrolyte of low pH were characterized by the fine-grained morphology which was not modified by the influence of magnetic field. AFM images proved the effect on roughness of the Co-films which is closely related with the obtained morphology.

  15. Probing spin-polarized edge state superconductivity by Andreev reflection in in-plane magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Reinthaler, Rolf W.; Tkachov, Grigory; Hankiewicz, Ewelina M. [Faculty of Physics and Astrophysics, University of Wuerzburg, Wuerzburg (Germany)

    2015-07-01

    Finding signatures of unconventional superconductivity in Quantum Spin Hall systems is one of the challenges of solid state physics. Here we induce superconductivity in a 3D topological insulator thin film to cause the formation of helical edge states, which are protected against backscattering even in finite magnetic fields. Above a critical in-plane magnetic field, which is much smaller than the critical field of typical superconductors, the quasi-particle gap closes, giving rise to energy-dependent spin polarization. In this regime the spin-polarized edge state superconductivity can be detected by Andreev reflection. We propose measurement setups to experimentally observe the spin-dependent excess current and dI/dV characteristics.

  16. Temperature dependence of coercive field and fatigue in poly(vinylidene fluoride-trifluoroethylene) copolymer ultra-thin films

    International Nuclear Information System (INIS)

    Zhang Xiuli; Xu Haisheng; Zhang Yanni

    2011-01-01

    The experimental intrinsic coercive field of ferroelectric poly(vinylidene fluoride-trifluoethylene) copolymer films, with both bottom and top gold electrodes is measured at a wide temperature range. In the lower temperature region from -20 to 25 deg. C, the temperature dependence of coercive field shows good agreement with the prediction by the Landau-Ginzburg (LG) mean-field theory. In the higher temperature region from 25 to 80 deg. C, the coercive field shows a slow decrease with the increased temperature, where the LG theory is not applicable any more. The temperature-dependent changes in the polymer chains have been analysed. A reversible 'inherent fatigue' is observed from the partially recovered remanent polarization after re-annealing a fatigued P(VDF-TrFE) film. FTIR spectra indicate that the interchain spacing does not change from 10 to 10 7 switching cycles while the degree of all-trans ferroelectric phase decreases gradually with applied switching cycles. After a re-annealing treatment, ferroelectric phase recovers and dipoles at the boundary of crystallites acquire much higher energy.

  17. Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films

    International Nuclear Information System (INIS)

    Xia Yidong; Cheng Jinbo; Pan Bai; Wu Di; Meng Xiangkang; Liu Zhiguo

    2005-01-01

    The impact of postannealing in electric field on the structure, tunability, and dielectric behavior of rf magnetron sputtering derived (Ba,Sr)TiO 3 films has been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability remarkably and destroy the symmetry of capacitance-voltage characteristics of the films. The increased out-of-plane lattice constant and the appearance of the hysteresis loops in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti 3+ ions caused by electric annealing could induce the formation of BaTiO 3 -like regions, which are ferroelectric at room temperature

  18. Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films

    Science.gov (United States)

    Xia, Yidong; Cheng, Jinbo; Pan, Bai; Wu, Di; Meng, Xiangkang; Liu, Zhiguo

    2005-08-01

    The impact of postannealing in electric field on the structure, tunability, and dielectric behavior of rf magnetron sputtering derived (Ba,Sr)TiO3 films has been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability remarkably and destroy the symmetry of capacitance-voltage characteristics of the films. The increased out-of-plane lattice constant and the appearance of the hysteresis loops in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti3+ ions caused by electric annealing could induce the formation of BaTiO3-like regions, which are ferroelectric at room temperature.

  19. Thin films for precision optics

    International Nuclear Information System (INIS)

    Araujo, J.F.; Maurici, N.; Castro, J.C. de

    1983-01-01

    The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

  20. Tuning SPT-3G Transition-Edge-Sensor Electrical Properties with a Four-Layer Ti-Au-Ti-Au Thin-Film Stack

    Science.gov (United States)

    Carter, F. W.; Ade, P. A. R.; Ahmed, Z.; Anderson, A. J.; Austermann, J. E.; Avva, J. S.; Thakur, R. Basu; Bender, A. N.; Benson, B. A.; Carlstrom, J. E.; Cecil, T.; Chang, C. L.; Cliche, J. F.; Cukierman, A.; Denison, E. V.; de Haan, T.; Ding, J.; Divan, R.; Dobbs, M. A.; Dutcher, D.; Everett, W.; Foster, A.; Gannon, R. N.; Gilbert, A.; Groh, J. C.; Halverson, N. W.; Harke-Hosemann, A. H.; Harrington, N. L.; Henning, J. W.; Hilton, G. C.; Holzapfel, W. L.; Huang, N.; Irwin, K. D.; Jeong, O. B.; Jonas, M.; Khaire, T.; Kofman, A. M.; Korman, M.; Kubik, D.; Kuhlmann, S.; Kuo, C. L.; Kutepova, V.; Lee, A. T.; Lowitz, A. E.; Meyer, S. S.; Michalik, D.; Miller, C. S.; Montgomery, J.; Nadolski, A.; Natoli, T.; Nguyen, H.; Noble, G. I.; Novosad, V.; Padin, S.; Pan, Z.; Pearson, J.; Posada, C. M.; Rahlin, A.; Ruhl, J. E.; Saunders, L. J.; Sayre, J. T.; Shirley, I.; Shirokoff, E.; Smecher, G.; Sobrin, J. A.; Stan, L.; Stark, A. A.; Story, K. T.; Suzuki, A.; Tang, Q. Y.; Thompson, K. L.; Tucker, C.; Vale, L. R.; Vanderlinde, K.; Vieira, J. D.; Wang, G.; Whitehorn, N.; Yefremenko, V.; Yoon, K. W.; Young, M. R.

    2018-04-01

    We have developed superconducting Ti transition-edge sensors with Au protection layers on the top and bottom for the South Pole Telescope's third-generation receiver (a cosmic microwave background polarimeter, due to be upgraded this austral summer of 2017/2018). The base Au layer (deposited on a thin Ti glue layer) isolates the Ti from any substrate effects; the top Au layer protects the Ti from oxidation during processing and subsequent use of the sensors. We control the transition temperature and normal resistance of the sensors by varying the sensor width and the relative thicknesses of the Ti and Au layers. The transition temperature is roughly six times more sensitive to the thickness of the base Au layer than to that of the top Au layer. The normal resistance is inversely proportional to sensor width for any given film configuration. For widths greater than five micrometers, the critical temperature is independent of width.

  1. Laser induced magnetization switching in a TbFeCo ferrimagnetic thin film: discerning the impact of dipolar fields, laser heating and laser helicity by XPEEM

    International Nuclear Information System (INIS)

    Gierster, L.; Ünal, A.A.; Pape, L.; Radu, F.; Kronast, F.

    2015-01-01

    We investigate laser induced magnetic switching in a ferrimagnetic thin film of Tb_2_2Fe_6_9Co_9 by PEEM. Using a small laser beam with a spot size of 3–5 µm in diameter in combination with high resolution magnetic soft X-ray microscopy we are able to discriminate between different effects that govern the microscopic switching process, namely the influence of the laser heating, of the helicity dependent momentum transfer, and of the dipolar coupling. Applying a sequence of femtosecond laser pulses to a previously saturated TbFeCo film leads to the formation of ring shaped magnetic structures in which all three effects can be observed. Laser helicity assisted switching is only observed in a narrow region within the Gaussian profile of the laser spot. Whereas in the center of the laser spot we find clear evidence for thermal demagnetization and in the outermost areas magnetic switching is determined by dipolar coupling with the surrounding film. Our findings demonstrate that by reducing the laser spot size the influence of dipolar coupling on laser induced switching is becoming increasingly important. - Highlights: • With a new PEEM sample holder a laser spot size of 3–5 µm in diameter is reached. • Spatial resolved imaging of laser induced magnetization reversal. • A single femtosecond laser pulse leads to a multi-domain state in TbFeCo. • A pulse sequence results in a ring-shaped magnetic pattern caused by dipolar fields. • Laser helicity dependent effects appear only in a narrow fluence region.

  2. A novel application of the CuI thin film for preparing thin copper nanowires

    International Nuclear Information System (INIS)

    Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

    2005-01-01

    We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

  3. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

    2014-01-01

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

  4. Foldover, quasi-periodicity, spin-wave instabilities in ultra-thin films subject to RF fields

    Energy Technology Data Exchange (ETDEWEB)

    D' Aquino, M. [Department of Electrical Engineering, University of Napoli ' Federico II' , Naples I-80125 (Italy)]. E-mail: mdaquino@unina.it; Bertotti, G. [Istituto Nazionale di Ricerca Metrologica (INRIM), I-10135 Turin (Italy); Serpico, C. [Department of Electrical Engineering, University of Napoli ' Federico II' , Naples I-80125 (Italy); Mayergoyz, I.D. [ECE Department and UMIACS, University of Maryland, College Park, MD 20742 (United States); Bonin, R. [Istituto Nazionale di Ricerca Metrologica (INRIM), I-10135 Turin (Italy); Guida, G. [Department of Electrical Engineering, University of Napoli ' Federico II' , Naples I-80125 (Italy)

    2007-09-15

    We study magnetization dynamics in a uniaxial ultra-thin ferromagnetic disk subject to spatially uniform microwave external fields. The rotational invariance of the system is such that the only admissible spatially uniform steady states are periodic (P-modes) and quasi-periodic (Q-modes) modes. The stability of P-modes versus spatially uniform and nonuniform perturbations is studied by using spin-wave analysis and the instability diagram for all possible P-modes is computed. The predictions of the spin-wave analysis are compared with micromagnetic simulations.

  5. Energy and dose characteristics of ion bombardment during pulsed laser deposition of thin films under pulsed electric field

    International Nuclear Information System (INIS)

    Fominski, V.Yu.; Nevolin, V.N.; Smurov, I.

    2004-01-01

    Experiments on pulsed laser deposition of Fe films on Si substrates were performed with the aim to analyze the role of factors determining the formation of an energy spectrum and a dose of ions bombarding the film in strong pulsed electric fields. The amplitude of the high-voltage pulse (-40 kV) applied to the substrate and the laser fluence at the Fe target were fixed during the deposition. Owing to the high laser fluence (8 J/cm 2 ) at a relatively low power (20 mJ), the ionization of the laser plume was high, but the Fe vapor pressure near the substrate was low enough to avoid arcing. Electric signals from a target exposed to laser radiation were measured under different conditions (at different delay times) of application of electric pulses. The Si(100) substrates were analyzed using Rutherford ion backscattering/channeling spectrometry. The ion implantation dose occurred to be the highest if the high-voltage pulse was applied at a moment of time when the ion component of the plume approached the substrate. In this case, the implanted ions had the highest energy determined by the amplitude of the electric pulse. An advance or delay in applying a high-voltage pulse caused the ion dose and energy to decrease. A physical model incorporating three possible modes of ion implantation was proposed for the interpretation of the experimental results. If a laser plume was formed in the external field, ions were accelerated from the front of the dense plasma, and the ion current depended on the gas-dynamic expansion of the plume. The application of a high-voltage pulse, at the instant when the front approached the substrate, maintained the mode that was characteristic of the traditional plasma immersion ion implantation, and the ion current was governed by the dynamics of the plasma sheath in the substrate-to-target gap. In the case of an extremely late application of a high-voltage pulse, ions retained in the entire volume of the experimental chamber (as a result of the

  6. Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

    International Nuclear Information System (INIS)

    Nakahara, Yoshio; Kawa, Haruna; Yoshiki, Jun; Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio; Yamakado, Hideo; Fukuda, Hisashi; Kimura, Keiichi

    2012-01-01

    Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol–gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 °C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol–gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: ► Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. ► The ultra-thin PSQ film could be cured at low temperatures of less than 120 °C. ► The PSQ film showed the almost perfect solubilization resistance to organic solvent. ► The surface of the PSQ film was very smooth at a nano-meter level. ► Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

  7. Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Nakahara, Yoshio; Kawa, Haruna [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Yoshiki, Jun [Division of Information and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio [Konishi Chemical IND. Co., LTD., 3-4-77 Kozaika, Wakayama 641-0007 (Japan); Yamakado, Hideo [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Fukuda, Hisashi [Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kimura, Keiichi, E-mail: kkimura@center.wakayama-u.ac.jp [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan)

    2012-10-01

    Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol-gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 Degree-Sign C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol-gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: Black-Right-Pointing-Pointer Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. Black-Right-Pointing-Pointer The ultra-thin PSQ film could be cured at low temperatures of less than 120 Degree-Sign C. Black-Right-Pointing-Pointer The PSQ film showed the almost perfect solubilization resistance to organic solvent. Black-Right-Pointing-Pointer The surface of the PSQ film was very smooth at a nano-meter level. Black-Right-Pointing-Pointer Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

  8. Failure and fracture of thin film materials for MEMS

    Science.gov (United States)

    Jonnalagadda, Krishna Nagasai

    Design and reliable operation of Microelectromechanical systems (MEMS) depend on the material parameters that influence the failure and fracture properties of brittle and metallic thin films. Failure in brittle materials is quantified by the onset of catastrophic fracture, while in metals, the onset of inelastic deformation is considered as failure as it increases the material compliance. This dissertation research developed new experimental methods to address three aspects on the failure response of these two categories of materials: (a) the role of microstructure and intrinsic stress gradients in the opening mode fracture of mathematically sharp pre-cracks in amorphous and polycrystalline brittle thin films, (b) the critical conditions for mixed mode I/II pre-cracks and their comparison with linear elastic fracture mechanics (LEFM) criteria for crack initiation in homogeneous materials, and (c) the strain rate sensitivity of textured nanocrystalline Au and Pt films with grain sizes of 38 nm and 25 nm respectively. One of the technical objectives of this research was to develop experimental methods and tools that could become standards in MEMS and thin film experimental mechanics. In this regard, a new method was introduced to conduct mode I and mixed mode I/II fracture studies with microscale thin film specimens containing sharp edge pre-cracks. The mode I experiments permitted the direct application of LEFM handbook solutions. On the other hand, the newly introduced mixed mode I/II experiments in thin films were conducted by establishing a new protocol that employs non-standard oblique edge pre-cracks and a numerical analysis based on the J-integral to calculate the stress intensity factors. Similarly, a new experimental protocol has been implemented to carry out experiments with metallic thin films at strain rates that vary by more than six orders of magnitude. The results of mode I fracture experiments concluded that grain inhomogeneity in polycrystalline

  9. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  10. Structural characterization of epitaxial YBa2Cu3O7 thin films on step-edge substrates by means of high-resolution electron microscopy

    International Nuclear Information System (INIS)

    Jia, C.L.; Kabius, B.; Urban, K.

    1993-01-01

    The microstructure of YBa 2 Cu 3 O 7 films epitaxially grown on step-edge (0 0 1) SrTiO 3 and LaAlO 3 substrates has been characterized by means of high-resolution electron microscopy. The results indicate a relationship between the microstructure of the film across a step and the angle the step makes with the substrate plane. On a steep, high-angle step, the film grows with its c-axis perpendicular to that of the film on substrate surface so that two grain boundaries are formed. In the upper grain boundary, on the average, a (0 1 3) habit plane alternates with a (1 0 3) habit plane. This alternating structure is caused by twinning in the orthorhombic structure. The lower boundaries consist of a chain of (0 1 3)(0 1 3) and (0 1 0)(0 0 1) type segments exhibiting a tendency to tilt the whole habit plane toward the a-b plane of the flank film. Dislocations, stacking faults and misfit strains were also observed in or close to the boundaries. (orig.)

  11. Effects of Post- Heat Treatment of Nanocrystalline ZnO Thin Films deposited on Zn-Deposited FTO Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ikhyun; Kim, Younggyu; Nam, Giwoong; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

    2015-10-15

    The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-doped tin oxide substrates by sol-gel spin coating. The SEM images of the samples showed that their surfaces had a mountain-chain-like structure. The film annealed at 400 ℃ had the highest degree of alignment along the c-axis, and its residual stress was close to zero. The PL spectra of the ZnO thin films consisted of sharp near-band-edge emissions (NBE) and broad deep-level emissions (DLE) in the visible range. The DLE peaks exhibited a green-to-red shift with an increase in the temperature. The highest INBE/IDLE ratio was observed in the film annealed at 400 ℃. Thus, the optimal temperature for growing high-quality ZnO thin films on Zn-deposited FTO substrates is 400 ℃.

  12. Nanocrystal thin film fabrication methods and apparatus

    Science.gov (United States)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  13. Electric and magnetic fields effects on the transport properties of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Villafuerte, M. E-mail: mvillafeurte@herrera.unt.edu.ar; Duhalde, S. E-mail: sduhald@fi.uba.ar; Rubi, D.; Bridoux, G.; Heluani, S.; Sirena, M.; Steren, L

    2004-05-01

    The insulator to metal transition in manganites can be drastically influenced by internal factors, such as chemical composition, or under a variety of external perturbations, like magnetic or electric fields. In this work, the electrical resistance of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films was investigated using different constant voltages. At low temperature the conductivity of the films is non-Ohmic and moderate electric fields results in resistivity switching to metastable states. Comparisons between the influence of magnetic and electric fields on transport measurements are reported.

  14. Research progress of VO2 thin film as laser protecting material

    Science.gov (United States)

    Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

    2018-03-01

    With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.

  15. Structural and magnetic properties of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point glasses and application in spin devices

    Energy Technology Data Exchange (ETDEWEB)

    Misawa, Takahiro; Mori, Sumito [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Komine, Takashi [Faculty of Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511 (Japan); Fujioka, Masaya; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan)

    2016-12-30

    Graphical abstract: This paper presents the first demonstration of the formation of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point (LSP) glasses used in spin quantum cross (SQC) devices and the theoretical prediction of spin filter effect in Ni{sub 78}Fe{sub 22}-based SQC devices. The fomation of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures was successfully demonstrated using a newly proposed thermal pressing technique. Interestingly, this technique gives rise to both a highly-oriented crystal growth in Ni{sub 78}Fe{sub 22} thin films and a 100-fold enhancement in coercivity, in contrast to those of as-deposited Ni{sub 78}Fe{sub 22} thin films. This remarkable increase in coercivity can be explained by the calculation based on two-dimensional random anisotropy model. These excellent features on structural and magnetic properties allowed us to achieve that the stray magnetic field was uniformly generated from the Ni{sub 78}Fe{sub 22} thin-film edge in the direction perpendicular to the cross section of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures. As we calculated the stray magnetic field generated between the two edges of Ni{sub 78}Fe{sub 22} thin-film electrodes in SQC devices, a high stray field of approximately 5 kOe was generated when the gap distance between two edges of the Ni{sub 78}Fe{sub 22} thin-film electrodes was less than 5 nm and the thickness of Ni{sub 78}Fe{sub 22} was greater than 20 nm. These experimental and calculated results suggest that Ni{sub 78}Fe{sub 22} thin films sandwiched between LSP glasses can be used as electrodes in SQC devices, providing a spin-filter effect, and also our proposed techniques utilizing magnetic thin-film edges will open up new opportunities for the creation of high performance spin devices, such as large magnetoresistance devices and nanoscale spin injectors. Our paper is of strong interest to the broad audience of Applied Surface Science, as it demonstrates that the

  16. Radiation induced luminescence from a dipole immersed in a thin film

    International Nuclear Information System (INIS)

    Nkoma, J.S.

    1990-08-01

    Luminescence is modelled as electromagnetic radiation from a dipole immersed in a thin film. Maxwell's equations are solved for the cases when the dipole in the thin film is oriented normal and parallel to the interfaces. Expressions for emitted electric fields outside the thin film are derived and are found to have a resonant denominator that vanishes at the surface polariton excitation frequencies for a thin film. Luminescent spectra are plotted and peaks are found that are identified to be associated with both surface response and bulk response. Numerical results are presented to illustrate the model by considering a vacuum-GaP-sapphire system. (author). 9 refs, 5 figs

  17. Manipulating Josephson junctions in thin-films by nearby vortices

    International Nuclear Information System (INIS)

    Kogan, V.G.; Mints, R.G.

    2014-01-01

    Highlights: • Vortex located in a bank of a planar Josephson junction changes its character. • Vortex located at some discreet positions in thin strip bank suppresses to zero the zero-field current. • The number of these positions is equal to the number of vortices trapped. • Critical current-field patterns are strongly affected by the vortex position. - Abstract: It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I c (H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I c (H) has zero at H=0 instead of the traditional maximum of ‘0-type’ junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction–vortex separation exceeds ∼W, the strip width, I c (H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges

  18. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Malek, M. F., E-mail: firz-solarzelle@yahoo.com [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Chair of Targeting and Treatment of Cancer Using Nanoparticles, Deanship of Scientific Research, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: rusop@salam.uitm.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  19. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    International Nuclear Information System (INIS)

    Abdullah, M. A. R.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-01-01

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  20. Thickness and temperature dependence of electrical resistivity of p-type Bi0.5Sb1.5Te3 thin films prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Duan Xingkai; Yang Junyou; Zhu, W; Fan, X A; Bao, S Q

    2006-01-01

    P-type Bi 0.5 Sb 1.5 Te 3 thin films with thicknesses in the range 80-320 nm have been deposited by the flash evaporation method on glass substrates at 473 K. XRD and field emission scanning electron microscope were performed to characterize the thin films. The results show that the thin films are polycrystalline and the grain size of the thin films increases with increasing thickness of the thin films. Compositional analysis of the thin films was also carried out by energy-dispersive x-ray analysis. A near linear relationship was observed between the electrical resistivity and the inverse thickness of the annealed thin films, and it agrees with Tellier's model. Electrical resistivity of the annealed thin films was studied in the temperature range 300-350 K, and their thermal activation behaviour was characterized, the activation energy for conduction decreases with increasing thickness of the thin films

  1. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  2. Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

    Science.gov (United States)

    Beringer, Douglas B.

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

  3. Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

    2017-08-01

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

  4. Improvement of physical properties of ZnO thin films by tellurium doping

    Energy Technology Data Exchange (ETDEWEB)

    Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

    2014-11-01

    Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

  5. Study on the Preparation and Properties of Colored Iron Oxide Thin Films

    International Nuclear Information System (INIS)

    Zhao Xianhui; Li Changhong; Liu Qiuping; He Junjing; Wang Hai; Liang Song; Duan Yandong; Liu Su

    2013-01-01

    Colored iron oxide thin films were prepared using Sol-gel technique. The raw materials were tetraethyl orthosilicate (TEOS), etoh ehanol (EtOH), iron nitrate, and de-ionized water. Various properties were measured and analysed, including the colour of thin films, surface topography, UV-Visible spectra, corrosion resistance and hydrophobicity. To understand how these properties influenced the structural and optical properties of Fe 2 O 3 thin films, Scanning Electron Microscope (SEM), UV Spectrophotometer and other facilities were employed. Many parameters influence the performance of thin films, such as film layers, added H 2 O content, and the amount of polydimethylsiloxane (PDMS). When the volume ratio of TEOS, EtOH and H 2 O was 15: 13: 1, the quality of Fe(NO 3 ) 3 ·9H 2 O was 6g, and pH value was 3, reddish and uniform Fe 2 O 3 thin films with excellent properties were produced. Obtained thin films possessed corrosion resistance in hydrochloric acid with pH=l and the absorption edge wavelength was ∼350.2nm. Different H 2 O contents could result in different morphologies of Fe 2 O 3 nanoparticles. When 1.5 ml PDMS was added into the Sol, thin films possessed hydrophobiliry without dropping. Coating with different layers, thin films appeared different morphologies. Meanwhile, with the increment of film layers, the absorbance increased gradually.

  6. NbN thin films for superconducting radio frequency cavities

    Science.gov (United States)

    Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.

    2012-12-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.

  7. NbN thin films for superconducting radio frequency cavities

    International Nuclear Information System (INIS)

    Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z

    2012-01-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)

  8. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  9. Review of thin film superconductivity

    International Nuclear Information System (INIS)

    Kihlstrom, K.E.

    1989-01-01

    Advances in thin film superconductivity are critical to the success of many proposed applications. The authors review several of the prominent techniques currently used to produce thin films of the high temperature superconductors including electron beam co-deposition, sputtering (both multiple and composite source configurations) and laser ablation. The authors look at the relevant parameters for each and evaluate the advantages and disadvantages of each technique. In addition, promising work on in situ oxidation is discussed. Also addressed are efforts to find optimum substrate materials and substrate buffer layers for various applications. The current state of the art for T c , J c and H c2 is presented for the yttrium, bismuth, and thallium compounds

  10. Microwave Josephson generation in thin film superconducting bridges

    International Nuclear Information System (INIS)

    Gubankov, V.N.; Koshelets, V.P.; Ovsyannikov, G.A.

    1975-01-01

    Thin-film bridges have some advantage over other types of superconducting weak links: good definition of electromagnetic parameters and of weak region geometry. Up to now Josephson properties of bridges have been investigated by using indirect methods (the effect of magnetic field on the critical current I 0 , the bridge behavior in a microwave field, etc.). Direct experimental observation of Josephson radiation from autonomous thin film bridges is reported. Microwave radiation in tin bridges of 'variable' thickness has been investigated where the thickness of the film forming the bridge is far less than the thickness of the bank films. (Auth.)

  11. Room temperature deposition of magnetite thin films on organic substrate

    International Nuclear Information System (INIS)

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  12. Thin-Film Power Transformers

    Science.gov (United States)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  13. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron ... alloys of Ni and Fe) take an important place. NiFe alloy with a ... room temperature (∼298 K, without intentional heating) on Si(100) substrates. A base pressure of 1×10−6 mbar was achieved prior to the deposition. Three different ...

  14. Superconducting properties of iron chalcogenide thin films

    Directory of Open Access Journals (Sweden)

    Paolo Mele

    2012-01-01

    Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

  15. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Paloly, Abdul Rasheed; Satheesh, M. [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain); Rajappan Achary, Sreekumar [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Bushiri, M. Junaid, E-mail: junaidbushiri@gmail.com [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India)

    2015-12-01

    Highlights: • SnO{sub 2} thin films were grown on hydrophilic and hydrophobic glass substrates. • Samples on hydrophobic substrates are having comparatively larger lattice volume. • Films on hydrophobic substrates have larger particles and low density distribution. • Substrate dependent photoluminescence emission is observed and studied. • SnO{sub 2} thin films grown over hydrophobic substrates may find potential applications. - Abstract: In this paper, we have demonstrated the growth of tin oxide (SnO{sub 2}) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO{sub 2} thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO{sub 2} films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO{sub 2} thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  16. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  17. Non-toxic novel route synthesis and characterization of nanocrystalline ZnS{sub x}Se{sub 1−x} thin films with tunable band gap characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Agawane, G.L., E-mail: agawaneganesh@gmail.com [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Shin, Seung Wook [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Vanalakar, S.A. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Moholkar, A.V. [Electrochemical Mat. Lab., Department of Physics, Shivaji University, Kolhapur 416-004 (India); Gurav, K.V.; Suryawanshi, M.P. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Lee, Jeong Yong [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Yun, Jae Ho, E-mail: yunjh92@kier.re.kr [Photovoltaic Research Group, KIER, Jang-Dong, Yuseong-Gu, Daejeon 305-343 (Korea, Republic of); Kim, Jin Hyeok, E-mail: jinhyeok@chonnam.ac.kr [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of)

    2014-07-01

    Highlights: • A simple, inexpensive, and non-toxic CBD route is used to deposit ZnS thin films. • The ZnS{sub x}Se{sub 1−x} thin films formation takes place via annealing of ZnS thin films in Se atmosphere. • S/(S + Se) ratio found to be temperature dependent and easy tuning of band gap has been done by Se atom deposition. - Abstract: An environmentally benign chemical bath deposition (CBD) route was employed to deposit zinc sulfide (ZnS) thin films. The CBD-ZnS thin films were further selenized in a furnace at various temperatures viz. 200, 300, 400, and 500 °C and the S/(S + Se) ratio was found to be dependent on the annealing temperature. The effects of S/(S + Se) ratio on the structural, compositional and optical properties of the ZnS{sub x}Se{sub 1−x} (ZnSSe) thin films were investigated. EDS analysis showed that the S/(S + Se) ratio decreased from 0.8 to 0.6 when the film annealing temperature increased from 200 to 500 °C. The field emission scanning electron microscopy and atomic force microscopy studies showed that all the films were uniform, pin hole free, smooth, and adhered well to the glass substrate. The X-ray diffraction study on the ZnSSe thin films showed the formation of the cubic phase, except for the unannealed ZnSSe thin film, which showed an amorphous phase. The X-ray photoelectron spectroscopy revealed Zn-S, Zn-Se, and insignificant Zn-OH bonds formation from the Zn 2p{sub 3/2}, S 2p, Se 3d{sub 5/2}, and O 1s atomic states, respectively. The ultraviolet–visible spectroscopy study showed ∼80% transmittance in the visible region for all the ZnSSe thin films having various absorption edges. The tuning of the band gap energy of the ZnSSe thin films was carried out by selenizing CBD-ZnS thin films, and as the S/(S + Se) ratio decreased from 0.8 to 0.6, the band gap energy decreased from 3.20 to 3.12 eV.

  18. Hall effect of K-doped superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

    2013-09-15

    We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

  19. Stable organic thin-film transistors

    Science.gov (United States)

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  20. Properties of superconducting thin-film microbridges

    International Nuclear Information System (INIS)

    Pei, S.S.

    1978-01-01

    This work reports investigations upon the dependences of critical current and current phase relation on the dimensions of a superconducting thin-film microbridge. A model has been developed upon the Volkov's hyperbolic bridges and the Zaitsev's boundary conditions to calculate the spatial variation of the order parameter for given bridge dimensions. The results indicate that the rigid boundary conditions are good approximations to narrow bridges (W much less than L) only. The critical current density of the bridge has been calculated also as a function of the bridge dimensions. It is found that the critical current density of small bridges is enhanced above its mean field critical value due to the proximity effects of the banks. Very good agreement is found between the calculated enhancement of the critical current density and the experimental results. Direct measurements have been made on the current phase relation of indium bridges with width smaller than 0.6 μm. The difficulties due to the extra phase shifts from the series thin film electrodes are overcome by a specially designed double loop configuration which has an extra low effective inductance. It is found that the current phase relation of small bridges (W,L, xi, the results agree with the predictions of rigid boundary calculations as expected by our model

  1. Influence of S/Mn molar ratio on the morphology and optical property of γ-MnS thin films prepared by microwave hydrothermal

    International Nuclear Information System (INIS)

    Yu, Xin; Li-yun, Cao; Jian-feng, Huang; Jia, Liu; Jie, Fei; Chun-yan, Yao

    2013-01-01

    Highlights: ► The influence of the precursor solution molar ratio of S/Mn. ► The degree of orientation of the γ-MnS film decrease slightly with increasing the S/Mn from 2.0 to 4.0. ► Film quality is strongly affected by the initial nucleation. ► The absorption edge obviously shifts to a higher wavelength with the increase of the S/Mn molar ratio from 2.0 to 4.0. - Abstract: Well crystallized γ-MnS thin films were successfully synthesized at low temperature and short processing time via a novel microwave hydrothermal (M-H) process without any complexing agent by using manganese chloride and thioacetamide as source materials. The influence of different S/Mn molar ratio in the precursor solution on the phase compositions, morphologies and optical properties of the as-deposited films was investigated. The as-deposited γ-MnS thin films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and ultraviolet–visible (UV–vis). Results show that the wurtzite phase γ-MnS thin films with good crystallization can be achieved when S/Mn molar ratio is controlled at 2.0–4.0. The deposited γ-MnS thin films exhibit (1 0 0) orientation growth with the thickness of 300–500 nm. With the increase of S/Mn molar ratio from 2.0 to 4.0, the orientation growth is weakened while the dense and uniform of the as-deposited γ-MnS thin films are obviously improved and the corresponding band gap of the thin films increase from 3.88 to 3.97 eV.

  2. Critical phenomena in Ising-type thin films by Monte Carlo study

    International Nuclear Information System (INIS)

    Masrour, R.; Jabar, A.; Benyoussef, A.; Hamedoun, M.

    2016-01-01

    The magnetic properties of ferrimagnetic spin-2 and 3/2 Ising-typed thin films are studied by Monte Carlo simulation. The critical temperature is obtained for different values of thickness of the thin film and for different exchange interactions. The total magnetization has been determined for different values of exchange interactions in surface and in bulk and different temperatures. The magnetic hysteresis cycle is obtained for different values of exchange interactions ferro and antiferromagnetic in the surface and in the bulk and for different values of temperatures for a fixed size of the film thickness. The coercive field increase with increasing the film thickness. - Highlights: • The magnetic properties of thin films are studied by Monte Carlo simulation. • The critical temperature is obtained for different values of thickness of thin film. • The magnetic hysteresis cycle is obtained in the surface and in the bulk. • The coercive field increase with increasing the thin film thickness.

  3. Critical phenomena in Ising-type thin films by Monte Carlo study

    Energy Technology Data Exchange (ETDEWEB)

    Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, 63, 46000 Safi (Morocco); Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E.URAC 12, Université Mohammed V, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Jabar, A. [Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E.URAC 12, Université Mohammed V, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Benyoussef, A. [Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E.URAC 12, Université Mohammed V, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco); Hamedoun, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco)

    2016-04-01

    The magnetic properties of ferrimagnetic spin-2 and 3/2 Ising-typed thin films are studied by Monte Carlo simulation. The critical temperature is obtained for different values of thickness of the thin film and for different exchange interactions. The total magnetization has been determined for different values of exchange interactions in surface and in bulk and different temperatures. The magnetic hysteresis cycle is obtained for different values of exchange interactions ferro and antiferromagnetic in the surface and in the bulk and for different values of temperatures for a fixed size of the film thickness. The coercive field increase with increasing the film thickness. - Highlights: • The magnetic properties of thin films are studied by Monte Carlo simulation. • The critical temperature is obtained for different values of thickness of thin film. • The magnetic hysteresis cycle is obtained in the surface and in the bulk. • The coercive field increase with increasing the thin film thickness.

  4. Lasing in liquid crystal thin films

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)], E-mail: palto@online.ru

    2006-09-15

    A lasing condition is formulated in matrix form for optically anisotropic thin films. Lasing behavior of liquid-crystal slabs is analyzed. In particular, it is shown that if the spatial extent of a liquid crystal slab is much larger than its thickness, then laser emission is feasible not only along the normal to the slab, but also in the entire angular sector. The generated laser light can be observed experimentally as a spot or as concentric rings on a screen. The lowest lasing threshold corresponds to in-plane sliding modes leaking into the substrate. The feedback required for lasing is provided by reflection from the interfaces, rather than edges, of the liquid-crystal slab operating as a planar Fabry-Perot cavity. For cholesteric liquid crystals, it is shown that energy loss to the sliding modes leaking into the substrates and escaping through their edges is a key factor that limits the efficiency of band-edge emission along the normal to the slab.

  5. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  6. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  7. Analysis of Hard Thin Film Coating

    Science.gov (United States)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  8. Quantitative MFM on superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stopfel, Henry; Vock, Silvia; Shapoval, Tetyana; Neu, Volker; Wolff, Ulrike; Haindl, Silvia; Engelmann, Jan; Schaefer, Rudolf; Holzapfel, Bernhard; Schultz, Ludwig [IFW Dresden, Institute for Metallic Material (Germany); Inosov, Dmytro S. [Max Planck Institute for Solid State Research, Stuttgart (Germany)

    2012-07-01

    Quantitative interpretation of magnetic force microscopy (MFM) data is a challenge, because the measured signal is a convolution between the magnetization of the tip and the stray field emanated by the sample. It was established theoretically that the field distribution just above the surface of the superconductor can be well approximated by the stray field of a magnetic monopole. The description of the MFM tip, however, needs a second approximation. The temperature-dependent vortex-distribution images on a NbN thin film were fitted using two different tip models. Firstly, the magnetic tip was assumed to be a monopole that leads to the simple monopole-monopole model for the tip-sample interaction force. Performing a 2D fitting of the data with this model, we extracted λ, Δ and the vortex pinning force. Secondly, a geometrical model was applied to calculate the tip-transfer-function of the MFM tip using the numerical BEM method.

  9. Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

    Science.gov (United States)

    Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

  10. Thin-Film Material Science and Processing | Materials Science | NREL

    Science.gov (United States)

    Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

  11. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  12. Front and backside processed thin film electronic devices

    Science.gov (United States)

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  13. Method for double-sided processing of thin film transistors

    Science.gov (United States)

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2008-04-08

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  14. Organic thin film transistor integration: a hybrid approach

    National Research Council Canada - National Science Library

    Li, F. M

    2011-01-01

    .... Her research interests are in the field of nanoand thin-film technology for applications in large area and flexible electronics, including displays, sensors, photovoltaics, circuits and systems. Dr. Li has co-authored a book entitled CCD Image Sensors in Deep-Ultraviolet (2005), and has published articles in various scientific journals. Arokia Nathan holds the...

  15. Tunable thin-film optical filters for hyperspectral microscopy

    Science.gov (United States)

    Favreau, Peter F.; Rich, Thomas C.; Prabhat, Prashant; Leavesley, Silas J.

    2013-02-01

    Hyperspectral imaging was originally developed for use in remote sensing applications. More recently, it has been applied to biological imaging systems, such as fluorescence microscopes. The ability to distinguish molecules based on spectral differences has been especially advantageous for identifying fluorophores in highly autofluorescent tissues. A key component of hyperspectral imaging systems is wavelength filtering. Each filtering technology used for hyperspectral imaging has corresponding advantages and disadvantages. Recently, a new optical filtering technology has been developed that uses multi-layered thin-film optical filters that can be rotated, with respect to incident light, to control the center wavelength of the pass-band. Compared to the majority of tunable filter technologies, these filters have superior optical performance including greater than 90% transmission, steep spectral edges and high out-of-band blocking. Hence, tunable thin-film optical filters present optical characteristics that may make them well-suited for many biological spectral imaging applications. An array of tunable thin-film filters was implemented on an inverted fluorescence microscope (TE 2000, Nikon Instruments) to cover the full visible wavelength range. Images of a previously published model, GFP-expressing endothelial cells in the lung, were acquired using a charge-coupled device camera (Rolera EM-C2, Q-Imaging). This model sample presents fluorescently-labeled cells in a highly autofluorescent environment. Linear unmixing of hyperspectral images indicates that thin-film tunable filters provide equivalent spectral discrimination to our previous acousto-optic tunable filter-based approach, with increased signal-to-noise characteristics. Hence, tunable multi-layered thin film optical filters may provide greatly improved spectral filtering characteristics and therefore enable wider acceptance of hyperspectral widefield microscopy.

  16. Research Progress on Measurement Methods and Influence Factors of Thin-film Stress

    Directory of Open Access Journals (Sweden)

    MA Yibo

    2018-02-01

    Full Text Available With the size of thin-film electronic devices decreasing, the film stress became an important reason for the failure of thin film devices. Film stress not only affected the membrane structure, but also associated with film optics, electricity, mechanics and other properties, therefore film stress turned into one hot spot in the research field of thin-film materials. This paper reviewed the latest research progress of film stress, substrate curvature method, X-ray diffraction technique and Raman spectroscopy, several frequently used stress measuring techniques were compared and analyzed, and composition ratios of thin film, substrate types, magnetron sputtering process parameters (sputtering power, work pressure, substrate temperature and annealing etc. factors influencing thin film stress were summarized. It was found that substrate curvature method was suitable for measuring almost all kinds of thin film materials. X-ray diffraction and Raman spectroscopy were just fit for measuring materials with characteristic peaks. Nanoindentation method required extra stress-free samples as comparison experiments. During film fabrication and annealing process, film stress usually transited from compressive to tensile status, and several factors combined together could affect stress, so film stress could be reached the minimum value or even stress-free status through setting appropriate parameters. Finally, combined with film stress research status, accurate stress measurement methods for different materials as a thin-film stress research direction were introduced, and challenges in thin film detection range were pointed out.

  17. Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films

    Science.gov (United States)

    Habermeier, H.-U.

    2008-10-01

    Complex oxides represent a class of materials with a plethora of fascinating intrinsic physical functionalities. The intriguing interplay of charge, spin and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental as well as application oriented research. The existence of nanoscale electronic phase separation in correlated complex oxides is one of the areas in this field whose impact on the current understanding of their physics and potential applications is not yet clear. In this paper this issue is treated from the point of view of complex oxide thin film technology. Commenting on aspects of complex oxide thin film growth gives an insight into the complexity of a reliable thin film technology for these materials. Exploring fundamentals of interfacial strain generation and strain accommodation paves the way to intentionally manipulate thin film properties. Furthermore, examples are given for an extrinsic continuous tuning of intrinsic electronic inhomogeneities in perovskite-type complex oxide thin films.

  18. Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films

    International Nuclear Information System (INIS)

    Habermeier, H-U

    2008-01-01

    Complex oxides represent a class of materials with a plethora of fascinating intrinsic physical functionalities. The intriguing interplay of charge, spin and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental as well as application oriented research. The existence of nanoscale electronic phase separation in correlated complex oxides is one of the areas in this field whose impact on the current understanding of their physics and potential applications is not yet clear. In this paper this issue is treated from the point of view of complex oxide thin film technology. Commenting on aspects of complex oxide thin film growth gives an insight into the complexity of a reliable thin film technology for these materials. Exploring fundamentals of interfacial strain generation and strain accommodation paves the way to intentionally manipulate thin film properties. Furthermore, examples are given for an extrinsic continuous tuning of intrinsic electronic inhomogeneities in perovskite-type complex oxide thin films.

  19. Control of polymer-packing orientation in thin films through synthetic tailoring of backbone coplanarity

    KAUST Repository

    Chen, Mark S.

    2013-10-22

    Controlling solid-state order of π-conjugated polymers through macromolecular design is essential for achieving high electronic device performance; yet, it remains a challenge, especially with respect to polymer-packing orientation. Our work investigates the influence of backbone coplanarity on a polymer\\'s preference to pack face-on or edge-on relative to the substrate. Isoindigo-based polymers were synthesized with increasing planarity by systematically substituting thiophenes for phenyl rings in the acceptor comonomer. This increasing backbone coplanarity, supported by density functional theory (DFT) calculations of representative trimers, leads to the narrowing of polymer band gaps as characterized by ultraviolet-visible-near infrared (UV-vis-NIR) spectroscopy and cyclic voltammetry. Among the polymers studied, regiosymmetric II and TII polymers exhibited the highest hole mobilities in organic field-effect transistors (OFETs), while in organic photovoltaics (OPVs), TBII polymers that display intermediate levels of planarity provided the highest power conversion efficiencies. Upon thin-film analysis by atomic force microscropy (AFM) and grazing-incidence X-ray diffraction (GIXD), we discovered that polymer-packing orientation could be controlled by tuning polymer planarity and solubility. Highly soluble, planar polymers favor face-on orientation in thin films while the less soluble, nonplanar polymers favor an edge-on orientation. This study advances our fundamental understanding of how polymer structure influences nanostructural order and reveals a new synthetic strategy for the design of semiconducting materials with rationally engineered solid-state properties. © 2013 American Chemical Society.

  20. Dynamics and morphology of chiral magnetic bubbles in perpendicularly magnetized ultra-thin films

    Science.gov (United States)

    Sarma, Bhaskarjyoti; Garcia-Sanchez, Felipe; Nasseri, S. Ali; Casiraghi, Arianna; Durin, Gianfranco

    2018-06-01

    We study bubble domain wall dynamics using micromagnetic simulations in perpendicularly magnetized ultra-thin films with disorder and Dzyaloshinskii-Moriya interaction. Disorder is incorporated into the material as grains with randomly distributed sizes and varying exchange constant at the edges. As expected, magnetic bubbles expand asymmetrically along the axis of the in-plane field under the simultaneous application of out-of-plane and in-plane fields. Remarkably, the shape of the bubble has a ripple-like part which causes a kink-like (steep decrease) feature in the velocity versus in-plane field curve. We show that these ripples originate due to the nucleation and interaction of vertical Bloch lines. Furthermore, we show that the Dzyaloshinskii-Moriya interaction field is not constant but rather depends on the in-plane field. We also extend the collective coordinate model for domain wall motion to a magnetic bubble and compare it with the results of micromagnetic simulations.

  1. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Unknown

    tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

  2. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  3. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  4. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  5. Tension Tests of Copper Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kyung Jo; Kim, Chung Youb [Chonnam Nat’l Univ., Gwangju (Korea, Republic of)

    2017-08-15

    Tension tests for copper thin films with thickness of 12 μm were performed by using a digital image correlation method based on consecutive digital images. When calculating deformation using digital image correlation, a large deformation causes errors in the calculated result. In this study, the calculation procedure was improved to reduce the error, so that the full field deformation and the strain of the specimen could be accurately and directly measured on its surface. From the calculated result, it can be seen that the strain distribution is not uniform and its variation is severe, unlike the distribution in a common bulk specimen. This might result from the surface roughness introduced in the films during the fabrication process by electro-deposition.

  6. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  7. TEM characterization of nanodiamond thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  8. Surface preparation for the heteroepitactic growth of ceramic thin films

    International Nuclear Information System (INIS)

    Norton, M.G.; Summerfelt, S.R.; Carter, C.B.

    1990-01-01

    The morphology, composition, and crystallographic orientation of the substrate influence the nucleation and growth of deposited thin films. A method for the preparation of controlled, characteristic surfaces is reported. The surfaces are suitable for the heteroepitactic growth of thin films. When used in the formation of electron-transparent thin foils, the substrates can be used to investigate the very early stages of film growth using transmission electron microscopy. The substrate preparation involves the cleaning and subsequent annealing to generate a surface consisting of a series of steps. The step terraces are formed on the energetically stable surface, and controlled nucleation and growth of films at step edges is found. The substrate materials prepared using this technique include (001) MgO, (001) SrTiO 3 , and (001) LaAlO 3

  9. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  10. Deposition of magnetoelectric hexaferrite thin films on substrates of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-12-15

    Magnetoelectric M-type hexaferrite thin films (SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19}) were deposited using Pulsed Laser Deposition (PLD) technique on Silicon substrate. A conductive oxide layer of Indium-Tin Oxide (ITO) was deposited as a buffer layer with the dual purposes of 1) to reduce lattice mismatch between the film and silicon and 2) to lower applied voltages to observe magnetoelectric effects at room temperature on Silicon based devices. The film exhibited magnetoelectric effects as confirmed by vibrating sample magnetometer (VSM) techniques in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe magnetoelectric effects was typically about 1000 times larger. The magnetoelectric thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance techniques. We measured saturation magnetization of 650 G, and coercive field of about 150 Oe for these thin films. The change in remanence magnetization was measured in the presence of DC voltages and the changes in remanence were in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a magnetoelectric coupling, α, of 1.36×10{sup −9} s m{sup −1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.

  11. Thin-film voltammetry and its analytical applications: A review

    International Nuclear Information System (INIS)

    Tian, Huihui; Li, Yunchao; Shao, Huibo; Yu, Hua-Zhong

    2015-01-01

    Highlights: • Electrochemistry at immiscible liquid–liquid interfaces is fundamentally important. • Methods for studying redox processes at liquid–liquid interfaces are reviewed. • Thin-film voltammetry is simple in experimental operation and kinetic data analysis. • Thin-film voltammetry’s analytical applications are prevailing and comprehensive. - Abstract: Electrochemical reactions at the interfaces of immiscible electrolyte solutions (ITIES) are of fundamental importance in the fields of chemical, biological and pharmaceutical sciences. Four-electrode cell setup, scanning electrochemical microscopy (SECM) and thin-film voltammetry are the three most frequently used methods for studying the electrochemical processes at these interfaces. The principle, experimental design, advantages and challenges of the three methods are described and compared. The thin-film voltammetry is highlighted for its simplicity in experimental operation and kinetic data analysis. Its versatile analytical applications are discussed in detail, including the study of redox properties of hydrophobic compounds, evaluation of interfacial electron transfer kinetics, synthesis of nanoparticles/nanostructures, and illustration of cross-membrane ion transport phenomena

  12. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  13. Determination of magnetic properties of multilayer metallic thin films

    International Nuclear Information System (INIS)

    Birlikseven, C.

    2000-01-01

    In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the experimental results to the theoretical models, effective magnetization and angles between the ferromagnetic layers were calculated. The correspondence between magnetization and magnetoresistance was evaluated. To see the effect of anisotropic magnetoresistance in the magnetoresistance measurements, a new experimental set-up was build and measurements were taken in this set-up. A series of soft permalloy thin films were made, and temperature dependent resistivity, magnetoresistance, anisotropic magnetoresistance and magnetization measurements were taken

  14. Magneto-optic observation of anomalous Meissner current flow in superconducting thin films with slits

    International Nuclear Information System (INIS)

    Baziljevich, M.; Johansen, T.H.; Bratsberg, H.; Shen, Y.; Vase, P.

    1996-01-01

    Slits patterned into a YBa 2 Cu 3 O 7-δ thin film were observed to obstruct Meissner sheet currents leading to an imbalance in the local Meissner screening properties. The new phenomenon was studied with magneto-optic imaging where twin lobes of opposite flux polarity were seen to form near the slits and inside the Meissner region. The lobe closest to the sample edge is always polarized opposite to the applied field. At weak fields, the anomalous flux generation is reversible. At higher fields, but still sufficiently small to keep the vortex penetration front away from the slits, the anomalous current starts nucleating flux lines which become trapped when the field is removed. copyright 1996 American Institute of Physics

  15. Progress in thin film techniques

    International Nuclear Information System (INIS)

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  16. BDS thin film damage competition

    Science.gov (United States)

    Stolz, Christopher J.; Thomas, Michael D.; Griffin, Andrew J.

    2008-10-01

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  17. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  18. Enhanced magnetoelectric coupling in a composite multiferroic system via interposing a thin film polymer

    Science.gov (United States)

    Xiao, Zhuyun; Mohanchandra, Kotekar P.; Lo Conte, Roberto; Ty Karaba, C.; Schneider, J. D.; Chavez, Andres; Tiwari, Sidhant; Sohn, Hyunmin; Nowakowski, Mark E.; Scholl, Andreas; Tolbert, Sarah H.; Bokor, Jeffrey; Carman, Gregory P.; Candler, Rob N.

    2018-05-01

    Enhancing the magnetoelectric coupling in a strain-mediated multiferroic composite structure plays a vital role in controlling magnetism by electric fields. An enhancement of magnetoelastic coupling between ferroelectric single crystal (011)-cut [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈ 0.30) and ferromagnetic polycrystalline Ni thin film through an interposed benzocyclobutene polymer thin film is reported. A nearly twofold increase in sensitivity of remanent magnetization in the Ni thin film to an applied electric field is observed. This observation suggests a viable method of improving the magnetoelectric response in these composite multiferroic systems.

  19. PVD processes of thin films deposition using Hall-current discharge

    International Nuclear Information System (INIS)

    Svadkovskij, I.V.

    2007-01-01

    Results of research and developments in the field of PVD processes of thin films deposition using Hall-current discharge have been summarized. Effects of interaction of ions with surface during deposition have been considered. Also features of application and prospects of devices based on ion beam and magnetron sputtering systems in thin films technologies have been analyzed. The aspects in the field plasma physics, technology and equipment plasma PVD processes of thin films deposition have been systematized, on the base of investigations made by author and other scientists. (authors)

  20. Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment

    Science.gov (United States)

    Lin, Yow-Jon; Hung, Cheng-Chun

    2018-02-01

    The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O2 treatment leads to the formation of Si(-OH) x (i.e., the formation of a hydroxylated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance and weaken the pentacene-SiO2 interaction, thus increasing the field-effect carrier mobility ( µ) in OTFTs. The temperature-dependent behavior of carrier transport is dominated by the multiple trapping model. Note that H2O2 treatment leads to a reduction in the activation energy. The increased value of µ is also attributed to the weakening of the interactions of the charge carriers with the SiO2 dielectric that serves to reduce the activation energy.

  1. PREFACE: 15th International Conference on Thin Films (ICTF-15)

    Science.gov (United States)

    Takai, Osamu; Saito, Nagahiro; Zettsu, Nobuyuki; Cho, Sung-Pyo; Terashima, Chiaki; Ueno, Tomonaga; Sakai, Osamu; Miyazaki, Seiichi; Yoshimura, Kazuki; Akamatsu, Kensuke; Ito, Takahiro; Yogo, Toshinobu; Inoue, Yasushi; Ohtake, Naoto; Yoshida, Tsukasa; Tosa, Masahiro; Takai, Madoka; Fujiwara, Yasufumi; Matsuda, Naoki; Teshima, Katsuya; Seki, Takahiro; Matsunaga, Katsuyuki; Fujita, Daisuke

    2013-03-01

    The International Conference on Thin Films is the most established conference for all researchers and persons interested in thin films and coatings. It is one of the tri-annual conference series endorsed and co-organized by the Thin Film Division of the International Union for Vacuum Science, Technique and Applications (IUVSTA), a union of national member societies whose role is to stimulate international collaboration in the fields of vacuum science, techniques and applications and related multi-disciplinary topics including solid-vacuum and other interfaces. The 15th International Conference on Thin Films (ICTF-15) is organized by The Vacuum Society of Japan (VSJ) and held at Kyoto TERRSA in Kyoto, Japan on 8-11 November 2011, following the 14th International Conference on Thin Films (ICTF-14), which was held in Ghent, Belgium in 2008. Thin films and coatings are daily becoming increasingly important in the fields of various industries. This International Conference provides a multi-disciplinary forum for recent advances in basic research, development and applications of thin films and coatings. This conference will present a unique opportunity for researchers, engineers and managers to acquire new knowledge of thin films and coatings. We hope that our understanding on thin films and coatings will be deepened through this conference. The conference site, 'Kyoto TERRSA' is located in the historical heart of the old capital Kyoto. Kyoto is an ancient city with a 1200-year history. It was established as Japan's capital under the name 'Heian-kyo' in the year 794. Although many transformations have taken place over the years, Kyoto has always embraced the most advanced standards of the times. It has greatly contributed to the nation's industrial, economic and cultural development. The dauntless spirit of leadership of Kyoto's past as a capital city is still felt here today. Kyoto also preserves the beloved examples of its culture as testimonials of time. This is shown

  2. Magnetic domain-wall motion study under an electric field in a Finemet{sup ®} thin film on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lan, Ngo Thi [Laboratoire des Sciences des Procédés et des Matériaux, CNRS-Université Paris XIII, 93430 Villetaneuse (France); Mercone, Silvana, E-mail: silvana.mercone@univ-paris13.fr [Laboratoire des Sciences des Procédés et des Matériaux, CNRS-Université Paris XIII, 93430 Villetaneuse (France); Moulin, Johan [Institut d' Electronique Fondamentale, UMR 8622 Université Paris Sud/CNRS, Orsay (France); Bahoui, Anouar El; Faurie, Damien; Zighem, Fatih; Belmeguenai, Mohamed; Haddadi, Halim [Laboratoire des Sciences des Procédés et des Matériaux, CNRS-Université Paris XIII, 93430 Villetaneuse (France)

    2015-01-01

    We study the influence of applied in-plane elastic strains on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB (Finemet{sup ®}) thin film. The in-plane strains are induced via the application of a voltage to a piezoelectric actuator on which the film/substrate system was glued. A quantitative characterization of the voltage dependence of the induced-strain at the surface of the film was performed using a digital image correlation technique. Magnetic Force Microscopy (MFM) images at remanence (H=0 Oe and U=0 V) clearly reveal the presence of weak stripe domains. The effect of the voltage-induced strain shows the existence of a voltage threshold value for the strike configuration break. For a maximum strain of ε{sub XX}∼0.5×10{sup −3} we succeed in destabilizing the stripes configuration helping the setting up of a complete homogeneous magnetic pattern. - Highlights: • Elastic strain effect on the magnetic domain structure of a Finemet/Kapton is investigated. • External loading is applied thanks to a piezo-actuator on which the sample is glued. • The amount of strains was measured by the Digital Image Correlation technique. • Magnetic Force Microscopy showed high mobility of magnetic stripes domains. • Bending, curving and branching of domains go into maze-like pattern.

  3. Macro stress mapping on thin film buckling

    Energy Technology Data Exchange (ETDEWEB)

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  4. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  5. Two-dimensional superconductivity in ultrathin disordered thin films

    International Nuclear Information System (INIS)

    Beasley, M.R.

    1992-01-01

    The status of the understanding of two-dimensional superconductivity in ultrathin, disordered thin films is reviewed. The different consequences of microscopic versus macroscopic disorder are stressed. It is shown that microscopic disorder leads to a rapid suppression of the mean-field transition temperature. The consequences of macroscopic disorder are not well understood, but a universal behavior of the zero-bias resistance as a function of field and temperature has been observed. (orig.)

  6. Annealing Effect on the Photoelectrochemical Properties of BiVO_4 Thin Film Electrodes

    International Nuclear Information System (INIS)

    Siti Nur Farhana Mohd Nasir; Mohd Asri Mat Teridi; Mehdi Ebadi; Sagu, J.S.

    2015-01-01

    Monoclinic bismuth vanadate (BiVO_4) thin film electrodes were fabricated on fluorine-doped tin oxide via aerosol-assisted chemical vapour deposition (AACVD). Annealing and without annealing effect of thin films were analysed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectrophotometry (UV-Vis) and current voltage measurement. All BiVO_4 thin films showed an anodic photocurrent. The sample of BiVO_4 annealed at 400 degree Celsius exhibited the highest photocurrent density of 0.44 mAcm"-"2 vs. Ag/ AgCl at 1.23 V. (author)

  7. Mastering the biaxial stress state in nanometric thin films on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Faurie, D., E-mail: faurie@univ-paris13.fr [LSPM-CNRS, UPR3407, Université Paris 13, Villetaneuse (France); Renault, P.-O.; Le Bourhis, E. [Institut Pprime UPR3346, CNRS – Université de Poitiers, Futuroscope (France); Geandier, G. [Institut Jean Lamour, CNRS UMR7198, Université de Lorraine, Nancy Cedex (France); Goudeau, P. [Institut Pprime UPR3346, CNRS – Université de Poitiers, Futuroscope (France); Thiaudière, D. [SOLEIL Synchrotron, Saint-Aubin, Gif-Sur-Yvette (France)

    2014-07-01

    Biaxial stress state of thin films deposited on flexible substrate can be mastered thanks to a new biaxial device. This tensile machine allows applying in-plane loads F{sub x} and F{sub y} in the two principal directions x and y of a cruciform-shaped polymer substrate. The transmission of the deformation at film/substrate interface allows controlling the stress and strain field in the thin films. We show in this paper a few illustrations dealing with strain measurements in polycrystalline thin films deposited on flexible substrate. The potentialities of the biaxial device located at Soleil synchrotron are also discussed.

  8. Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

    International Nuclear Information System (INIS)

    Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

    2008-01-01

    Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

  9. Solid thin film materials for use in thin film charge-coupled devices

    International Nuclear Information System (INIS)

    Lynch, S.J.

    1983-01-01

    Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

  10. Quenching of superconductivity in disordered thin films by phase fluctuations

    International Nuclear Information System (INIS)

    Hebard, A.F.; Palaanen, M.A.

    1992-01-01

    The amplitude Ψ 0 and phase Φ of the superconducting order parameter in thin-film systems are affected differently by disorder and dimensionality. With increasing disorder superconducting long range order is quenched in sufficiently thin films by physical processes driven by phase fluctuations. This occurs at both the zero-field vortex-antivortex unbinding transition and at the zero-temperature magnetic-field-tuned superconducting-insulating transition. At both of these transitions Ψ 0 is finite and constant, vanishing only when temperature, disorder, and/or magnetic field are increased further. Experimental results on amorphous-composite InO x films are presented to illustrate these points and appropriate comparisons are made to other experimental systems. (orig.)

  11. Specular Andreev reflection in thin films of topological insulators

    Science.gov (United States)

    Majidi, Leyla; Asgari, Reza

    2016-05-01

    We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.

  12. Photo-induced hydrophilicity of TiO2-xNx thin films on PET plates

    International Nuclear Information System (INIS)

    Chou, H.-Y.; Lee, E.-K.; You, J.-W.; Yu, S.-S.

    2007-01-01

    TiO 2-x N x thin films were deposited on PET (polyethylene terephthalate) plates by sputtering a TiN target in a N 2 /O 2 plasma and without heating. X-ray photoemission spectroscopy (XPS) was used to investigate the N 1s, Ti 2p core levels and the nitrogen composition in the TiO 2-x N x films. The results indicate that Ti-O-N bonds are formed in the thin films. Two nitrogen states, substitution and interstitial nitrogen atoms, were attributed to peaks at 396 and 399 eV, respectively. It was observed that the nitrogen atoms occupy both the substitutive and interstitial sites in respective of the nitrogen content in the thin films. UV-VIS absorption spectroscopy of PET coated thin films shows a significant shift of the absorption edge to lower energy in the visible-light region. UV and visible-light irradiation are used to activate PET coated thin films for the development of hydrophilicity. The photo-induced surface wettability conversion reaction of the thin films has been investigated by means of water contact angle measurement. PET plates coated with TiO 2-x N x thin films are found to exhibit lower water contact angle than non-coated plates when the surface is illuminated with UV and visible light. The effects of nitrogen doping on photo-generated hydrophilicity of the thin films are investigated in this work

  13. Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

    2017-08-15

    Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

  14. Electromagnetic properties of thin film lead superconductors

    International Nuclear Information System (INIS)

    Moriyama, K.

    1978-01-01

    The dependence of critical film magnetic field H/sub cf/ on temperature, thickness, and surface texture of lead superconducting films was investigated, as well as the relationship between the applied magnetic field and the applied current at the critical field. Temperature and thickness dependence data were consistent with the predictions of London, of Ginzburg, and of Bardeen, Cooper, and Schreiffer. The values of H/sub cf/ of lead films deposited on a rough surface were consistently lower than for those on a smooth surface and so were not in agreement with any currently accepted theory. The degree of lowering of H/sub cf/ by a rough surface was greater in thin films than in thick films. The expected dependence of penetration depth lambda on thickness d was not observed, and the range of lambda was somewhat greater than expected. The range of coherence length was greater than predicted. The prediction for temperature dependence of critical current by Glover and Coffey was found to involve some oversimplification, and a suggested correction is supported by the data. For applied magnetic fields perpendicular to the applied current and parallel to the film surface, the relationship between the critical values of the magnetic field and the current was as predicted for lead films by Alphonse and Bergstein

  15. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  16. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  17. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  18. Flush Mounting Of Thin-Film Sensors

    Science.gov (United States)

    Moore, Thomas C., Sr.

    1992-01-01

    Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.

  19. Thin film description by wavelet coefficients statistics

    Czech Academy of Sciences Publication Activity Database

    Boldyš, Jiří; Hrach, R.

    2005-01-01

    Roč. 55, č. 1 (2005), s. 55-64 ISSN 0011-4626 Grant - others:GA UK(CZ) 173/2003 Institutional research plan: CEZ:AV0Z10750506 Keywords : thin films * wavelet transform * descriptors * histogram model Subject RIV: BD - Theory of Information Impact factor: 0.360, year: 2005 http://library.utia.cas.cz/separaty/2009/ZOI/boldys-thin film description by wavelet coefficients statistics .pdf

  20. Ultra-thin films for plasmonics: a technology overview

    DEFF Research Database (Denmark)

    Malureanu, Radu; Lavrinenko, Andrei

    2015-01-01

    Ultra-thin films with low surface roughness that support surface plasmon-polaritons in the infra-red and visible ranges are needed in order to improve the performance of devices based on the manipulation of plasmon propagation. Increasing amount of efforts is made in order not only to improve...... the quality of the deposited layers but also to diminish their thickness and to find new materials that could be used in this field. In this review, we consider various thin films used in the field of plasmonics and metamaterials in the visible and IR range. We focus our presentation on technological issues...... of their deposition and reported characterization of film plasmonic performance....

  1. Uniaxial anisotropy in magnetite thin film-Magnetization studies

    International Nuclear Information System (INIS)

    Wiechec, A.; Korecki, J.; Handke, B.; Kakol, Z.; Owoc, D.; Antolak, D.A.; Kozlowski, A.

    2006-01-01

    Magnetization and electrical resistivity measurements have been performed on a stoichiometric single crystalline magnetite Fe 3 O 4 thin film (thickness of ca. 500 nm) MBE deposited on MgO (1 0 0) substrate. The aim of these studies was to check the influence of preparation method and sample form (bulk vs. thin film) on magnetic anisotropy properties in magnetite. The film magnetization along versus applied magnetic field has been determined both in the direction parallel and perpendicular to the film surface, and at temperatures above and below the Verwey transition. We have found, in agreement with published results, that the in-plane field of 10 kOe was not sufficient to saturate the sample. This can be understood if some additional factor, on top of the bulk magnetocrystalline anisotropy, is taken into account

  2. Nanosphere lithography applied to magnetic thin films

    Science.gov (United States)

    Gleason, Russell

    Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

  3. A Method for Suppressing Superconductivity of Thin Films

    Science.gov (United States)

    Suppula, Tarmo; Pekola, Jukka; Kauppinen, Juha

    2003-03-01

    We have developed a method for suppressing superconductivity of thin films. Thin stripes of cobalt grown by e-gun evaporation and patterned by e-beam lithography were placed in the vicinity of aluminium thin film structures. The cobalt stripes were magnetized at 4.2 K with a superconducting coil and the remanence suppressed superconductivity of the Al stripe at temperatures down to 50 mK at least. The magnetization remained in thermal cycling and in a longer storage at room temperature. Motivation for this work is the Coulomb Blockade Thermometer(CBT)^1 which has to be in a normal state to operate. The CBT sensor contains aluminium which is superconducting at temperatures below 1.4 K. An external magnetic field is not always available or acceptable in cryostats. A small grain of permanent magnet mounted to the sensor is another solution, but suspicious if the sensor is put in strong magnetic fields or if "zero field" environment is required. We have shown that suitably patterned and magnetized Co stripes in the vicinity of tunnel junctions of the CBT can solve this problem. The amount of magnetic material in the sensor, as well as the stray field, is very small. This technique may be useful in other low temperature thin film devices also. 1) Product of Nanoway Ltd.

  4. Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

    Directory of Open Access Journals (Sweden)

    Pei-Chung Lin

    2016-08-01

    Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

  5. Determination and analysis of dispersive optical constants of some organic thin films

    International Nuclear Information System (INIS)

    Kaya, Y.; Taysioglu, A. A.; Peksoez, A.; Irez, G.; Derebasi, N.; Kaynak, G.

    2010-01-01

    Schiff bases are an important class of ligands in coordination chemistry and find extensive application in different fields. Recently, increased interest in organic thin film materials has arisen due to their extensive applications in the fields of mechanics, flexible electronics and optics. Optoelectronics is the area in which organic films and organic-inorganic nanostructures have found their main applications in the last decade. These organic thin films have been also used in a wide variety of applications such as Schottky diodes, solid state devices and optical sensors. The optical constants (refractive index, n; extinction coefficient, k and dielectric constant, e) of some organic thin films were determined using reflectance and transmittance spectra. Analysis of the basis absorption spectra was also carried out to determine optical band gap (Eg) and Urbach parameter (E0). A surface observation of these thin films was also carried out by an Atomic Force Microscope.

  6. Studies of electronic and magnetic properties of LaVO3 thin film

    Science.gov (United States)

    Jana, Anupam; Karwal, Sharad; Choudhary, R. J.; Phase, D. M.

    2018-04-01

    We have investigated the electronic and magnetic properties of pulsed laser deposited Mott insulator LaVO3 (LVO) thin film. Structural characterization revels the single phase [00l] oriented LVO thin film. Enhancement of out of plane lattice parameter indicates the compressively strained LVO film. Electron spectroscopic studies demonstrate that vanadium is present in V3+ state. An energy dispersive X-ray spectroscopic study ensures the stoichiometric growth of the film. Very smooth surface is observed in scanning electron micrograph. Colour mapping for elemental distribution reflect the homogeneity of LVO film. The bifurcation between zero-field-cooled and Field-cooled curves clearly points towards the weak ferromagnetic phase presence in compressively strained LVO thin film. A finite value of coercivity at 300 K reflects the possibility of room temperature ferromagnetism of LVO thin film.

  7. Modelling of imploding phase of thin-film liners

    International Nuclear Information System (INIS)

    Savic, P.; Gupta, R.P.; Kekez, M.M.; Lau, J.H.; Lougheed, G.D.

    1983-01-01

    Theoretical models for thin-film implosions in vacuum are proposed for theta and Z-geometries in this paper, in order to develop a high-energy XUV source. In the present study, attention is confined to the implosion phase. The authors consider the plasma to be perfectly conducting and to have a frozen magnetic field resulting in a modified magnatoacoustic wave speed. An attempt is made to find to what extend the present treatment differs from detailed numerical analysis

  8. Thin-film intermediate band chalcopyrite solar cells

    International Nuclear Information System (INIS)

    Fuertes Marron, D.; Marti, A.; Luque, A.

    2009-01-01

    Chalcopyrite-based solar cells currently lead the efficiency tables of thin-film photovoltaic technologies. Further improvements are foreseen upon implementation of an intermediate band in the absorber layers. We present a theoretical analysis of the efficiency limit for this type of device as a function of factors such as the gap of the host, the relative position of the intermediate band with respect to the band edge and the level of light concentration used as illumination. We have also considered the impact of non-idealities on the performance of the device, particularly the effect of electronic losses related to non-radiative recombination

  9. Thin films of molecular metals TTF-TCNQ

    International Nuclear Information System (INIS)

    Fraxedas, J.; Molas, S.; Figueras, A.; Jimenez, I.; Gago, R.; Auban-Senzier, P.; Goffman, M.

    2002-01-01

    We present recent results on the characterization of highly ordered polycrystalline thin films of the charge transfer salt TTF-TCNQ (TTF=tetrathiafulvalene, TCNQ=tetracyanoquinodimethane) prepared by thermal sublimation in high vacuum under different conditions. The increase in orientation and microcrystal size as a function of substrate and annealing temperatures is addressed. A consequence of such an increase is the reduction of the conductivity activation energy, which eventually leads to the observation of the Peierls transition by resistivity measurements. X-ray absorption near edge spectroscopy studies performed with synchrotron radiation reveal directly the influence of charge transfer on unoccupied states near the Fermi level

  10. Thin films of molecular metals TTF-TCNQ

    CERN Document Server

    Fraxedas, J; Figueras, A; Jimenez, I; Gago, R; Auban-Senzier, P; Goffman, M

    2002-01-01

    We present recent results on the characterization of highly ordered polycrystalline thin films of the charge transfer salt TTF-TCNQ (TTF=tetrathiafulvalene, TCNQ=tetracyanoquinodimethane) prepared by thermal sublimation in high vacuum under different conditions. The increase in orientation and microcrystal size as a function of substrate and annealing temperatures is addressed. A consequence of such an increase is the reduction of the conductivity activation energy, which eventually leads to the observation of the Peierls transition by resistivity measurements. X-ray absorption near edge spectroscopy studies performed with synchrotron radiation reveal directly the influence of charge transfer on unoccupied states near the Fermi level.

  11. Modeling the influence of the seeding layer on the transition behavior of a ferroelectric thin film

    International Nuclear Information System (INIS)

    Oubelkacem, A.; Essaoudi, I.; Ainane, A.; Saber, M.; Dujardin, F.

    2011-01-01

    The transition properties of a ferroelectric thin film with seeding layers were studied using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions. The effect of interaction parameters for the seeding layer on the phase diagram was also examined. We calculated the critical temperature and the polarization of the ferroelectric thin film for different seeding layer structures. We found that the seeding layer can greatly increase the Curie temperature and the polarization.

  12. Anisotropy of the Irreversibility Field for Zr-doped (Y,Gd)Ba2<\\sub>Cu3<\\sub>O<7-x<\\sub> Thin Films up to 45 T

    Energy Technology Data Exchange (ETDEWEB)

    Tarantini, C. [Florida State University; Jaroszynski, J. [Florida State University; Kametani, F. [Florida State University; Zuev, Yuri L [ORNL; Gurevich, A. [Florida State University; Chen, Y [SuperPower Incorporated, Schenectady, New York; Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York; Larbalestier, D. C. [Florida State University; Christen, David K [ORNL

    2011-01-01

    The anisotropic irreversibility fieldBIrr of twoYBa2Cu3O7 x thin films dopedwith additional rare earth (RE)= (Gd, Y) and Zr and containing strong correlated pins (splayed BaZrO3 nanorods and RE2O3 anoprecipitates) has been measured over a very broad range up to 45 T at temperatures 56 K < T < Tc. We found that the experimental angular dependence of BIrr ( ) does not follow the mass anisotropy scaling BIrr ( ) = BIrr (0)(cos2 + 2 sin2 ) 1/2, where = (mc/mab)1/2 = 5 6 for the RE-doped Ba2Cu3O7 x (REBCO) crystals, mab and mc are the effective masses along the ab plane and the c-axis, respectively, and is the angle between B and the c-axis. For B parallel to the ab planes and to the c-axis correlated pinning strongly enhances BIrr , while at intermediate angles, BIrr ( ) follows the scaling behavior BIrr ( ) (cos2 + 2 RP sin2 ) 1/2 with the effective anisotropy factor RP 3 significantly smaller than the ass anisotropy would suggest. In spite of the strong effects of c-axis BaZrO3 nanorods, we found even greater enhancements of BIrr for fields along the ab planes than for fields parallel to the c-axis, as well as different temperature dependences of the correlated pinning contributions to BIrr for B//ab and B//c. Our results show that the dense and strong pins, which can now be incorporated into REBCO thin films in a controlled way, exert major and diverse effects on the measured vortex pinning anisotropy and the irreversibility field over wide ranges of B and T . In particular, we show that the relative contribution of correlated pinning to BIrr for B//c increases as the temperature increases due to the suppression of thermal fluctuations of vortices by splayed distribution of BaZrO3 nanorods.

  13. Phonon transport across nano-scale curved thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mansoor, Saad B.; Yilbas, Bekir S., E-mail: bsyilbas@kfupm.edu.sa

    2016-12-15

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  14. Phonon transport across nano-scale curved thin films

    International Nuclear Information System (INIS)

    Mansoor, Saad B.; Yilbas, Bekir S.

    2016-01-01

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  15. Pulsed laser deposition and characterization of cellulase thin films

    Science.gov (United States)

    Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

    2013-08-01

    Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

  16. TI--CR--AL--O thin film resistors

    Science.gov (United States)

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  17. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  18. Magnetic Property in Large Array Niobium Antidot Thin Films

    Science.gov (United States)

    Tinghui, Chen; Hsiang-Hsi, Kung; Wei-Li, Lee; Institute of Physics, Academia Sinica, Taipei, Taiwan Team

    2014-03-01

    In a superconducting ring, the total flux inside the ring is required to be an integer number of the flux quanta. Therefore, a supercurrent current can appear within the ring in order to satisfy this quantization rule, which gives rise to certain magnetic response. By using a special monolayer polymer/nanosphere hybrid we developed previously, we fabricated a series of superconducting niobium antidot thin films with different antidot diameters. The antidots form well-ordered triangular lattice with a lattice spacing about 200 nm and extend over an area larger than 1 cm2, which enables magnetic detections simply by a SQUID magnetometer. We observed magnetization oscillation with external magnetic field due to the supercurrent screening effect, where different features for large and small antidot thin films were found. Detailed size and temperature dependencies of the magnetization in niobium antidot nanostructures will be presented.

  19. Tunneling probe of fluctuating superconductivity in disordered thin films

    Science.gov (United States)

    Dentelski, David; Frydman, Aviad; Shimshoni, Efrat; Dalla Torre, Emanuele G.

    2018-03-01

    Disordered thin films close to the superconductor-insulator phase transition (SIT) hold the key to understanding quantum phase transition in strongly correlated materials. The SIT is governed by superconducting quantum fluctuations, which can be revealed, for example, by tunneling measurements. These experiments detect a spectral gap, accompanied by suppressed coherence peaks, on both sides of the transition. Here we describe the insulating side in terms of a fluctuating superconducting field with finite-range correlations. We perform a controlled diagrammatic resummation and derive analytic expressions for the tunneling differential conductance. We find that short-range superconducting fluctuations suppress the coherence peaks even in the presence of long-range correlations. Our approach offers a quantitative description of existing measurements on disordered thin films and accounts for tunneling spectra with suppressed coherence peaks.

  20. Printable Thin Film Supercapacitors Using Single-Walled Carbon Nanotubes

    KAUST Repository

    Kaempgen, Martti

    2009-05-13

    Thin film supercapacitors were fabricated using printable materials to make flexible devices on plastic. The active electrodes were made from sprayed networks of single-walled carbon nanotubes (SWCNTs) serving as both electrodes and charge collectors. Using a printable aqueous gel electrolyte as well as an organic liquid electrolyte, the performances of the devices show very high energy and power densities (6 W h/kg for both electrolytes and 23 and 70 kW/kg for aqueous gel electrolyte and organic electrolyte, respectively) which is comparable to performance in other SWCNT-based supercapacitor devices fabricated using different methods. The results underline the potential of printable thin film supercapacitors. The simplified architecture and the sole use of printable materials may lead to a new class of entirely printable charge storage devices allowing for full integration with the emerging field of printed electronics. © 2009 American Chemical Society.

  1. Alkaline-doped manganese perovskite thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Bibes, M.; Gorbenko, O.; Martinez, B.; Kaul, A.; Fontcuberta, J.

    2000-01-01

    We report on the preparation and characterization of La 1-x Na x MnO 3 thin films grown by MOCVD on various single-crystalline substrates. Under appropriate conditions epitaxial thin films have been obtained. The Curie temperatures of the films, which are very similar to those of bulk samples of similar composition, reflect the residual strain caused by the substrate. The anisotropic magnetoresistance AMR of the films has been analyzed in some detail, and it has been found that it has a two-fold symmetry at any temperature. Its temperature dependence mimics that of the electrical resistivity and magnetoresistance measured at similar fields, thus suggesting that the real structure of the material contributes to the measured AMR besides the intrinsic component

  2. Dynamics of space and polarization charges of ferroelectric thin films measured by atomic force microscopy

    International Nuclear Information System (INIS)

    Oh, Y.J.; Lee, J.H.; Jo, W.

    2006-01-01

    Retention behavior and local hysteresis characteristics in Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films on Pt electrodes have been investigated by electrostatic force microscopy (EFM). A sol-gel method is used to synthesize PZT thin films and drying conditions are carefully explored over a wide range of temperature. Decay and retention mechanisms of single-poled and reverse-poled regions of the ferroelectric thin films are explained by space charge redistribution. Trapping behavior of space charges is dependent on the nature of interface between ferroelectric thin films and bottom electrodes. Local measurement of polarization-electric field curves by EFM shows inhomogeneous space charge entrapment

  3. Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

    Science.gov (United States)

    Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

    2014-11-01

    The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. A statistical-thermodynamic model for ordering phenomena in thin film intermetallic structures

    International Nuclear Information System (INIS)

    Semenova, Olga; Krachler, Regina

    2008-01-01

    Ordering phenomena in bcc (110) binary thin film intermetallics are studied by a statistical-thermodynamic model. The system is modeled by an Ising approach that includes only nearest-neighbor chemical interactions and is solved in a mean-field approximation. Vacancies and anti-structure atoms are considered on both sublattices. The model describes long-range ordering and simultaneously short-range ordering in the thin film. It is applied to NiAl thin films with B2 structure. Vacancy concentrations, thermodynamic activity profiles and the virtual critical temperature of order-disorder as a function of film composition and thickness are presented. The results point to an important role of vacancies in near-stoichiometric and Ni-rich NiAl thin films

  5. Cell culture arrays using micron-sized ferromagnetic ring-shaped thin films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Chen-Yu; Wei, Zung-Hang, E-mail: wei@pme.nthu.edu.tw [Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu City 300, Taiwan (China); Lai, Mei-Feng; Ger, Tzong-Rong [Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu City 300, Taiwan (China)

    2015-05-07

    Cell patterning has become an important technology for tissue engineering. In this research, domain walls are formed at the two ends of a ferromagnetic ring thin film after applying a strong external magnetic field, which can effectively attract magnetically labeled cells and control the position for biological cell. Magnetophoresis experiment was conducted to quantify the magnetic nanoparticle inside the cells. A ring-shaped magnetic thin films array was fabricated through photolithography. It is observed that magnetically labeled cells can be successfully attracted to the two ends of the ring-shaped magnetic thin film structure and more cells were attracted and further attached to the structures. The cells are co-cultured with the structure and kept proliferating; therefore, such ring thin film can be an important candidate for in-vitro biomedical chips or tissue engineering.

  6. Fabrication and magnetization measurement of Ni thin films on silicon substrate by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Tang Yang [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)], E-mail: dxzhao2000@yahoo.com.cn; Shen Dezhen; Zhang Jiying; Li Binghui; Lu Youming; Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2008-02-29

    Ni thin films were electrodeposited on n-Si (100) substrate from the electrolytes containing Ni(CH{sub 3}COO){sub 2} and CH{sub 3}COONH{sub 4} at room temperature. The scanning electron microscope images of the films reveals the uniform distribution of the nickel all over the substrate surface, which illustrates that the fine Ni films on large scales could be obtained through the method of electrodeposition. Vibrating sample magnetometer measurement with the applied field parallel to the surface shows obvious hysteresis loops of the magnetic thin films. The morphology and magnetism of the Ni thin films evolves with the deposition time increasing. The effect of deposition conditions on the properties of the Ni thin films is investigated.

  7. Cell culture arrays using micron-sized ferromagnetic ring-shaped thin films

    International Nuclear Information System (INIS)

    Huang, Chen-Yu; Wei, Zung-Hang; Lai, Mei-Feng; Ger, Tzong-Rong

    2015-01-01

    Cell patterning has become an important technology for tissue engineering. In this research, domain walls are formed at the two ends of a ferromagnetic ring thin film after applying a strong external magnetic field, which can effectively attract magnetically labeled cells and control the position for biological cell. Magnetophoresis experiment was conducted to quantify the magnetic nanoparticle inside the cells. A ring-shaped magnetic thin films array was fabricated through photolithography. It is observed that magnetically labeled cells can be successfully attracted to the two ends of the ring-shaped magnetic thin film structure and more cells were attracted and further attached to the structures. The cells are co-cultured with the structure and kept proliferating; therefore, such ring thin film can be an important candidate for in-vitro biomedical chips or tissue engineering

  8. Photoluminescence properties of perovskite multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

    2016-07-01

    Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

  9. Nano-enabled tribological thin film coatings: global patent scenario.

    Science.gov (United States)

    Sivudu, Kurva S; Mahajan, Yashwant R; Joshi, Shrikant V

    2014-01-01

    The aim of this paper is to present current status and future prospects of nano-enabled tribological thin film coatings based on worldwide patent landscape analysis. The study also presents an overview of technological trends by carrying out state-of-the-art literature analysis, including survey of corporate websites. Nanostructured tribological coatings encompass a wide spectrum of nanoscale microstructures, including nanocrystalline, nanolayered, nano-multilayered, nanocomposite, nanogradient structures or their unique combinations, which are composed of single or multi-component phases. The distinct microstructural features of the coatings impart outstanding tribological properties combined with multifunctional attributes to the coated components. Their unique combination of remarkable properties make them ideal candidates for a wide range of applications in diverse fields such as cutting and metalworking tools, biomedical devices, automotive engine components, wear parts, hard disc drives etc. The patent landscape analysis has revealed that nano-enabled tribological thin film coatings have significant potential for commercial applications in view of the lion's share of corporate industry in patenting activity. The largest patent portfolio is held by Japan followed by USA, Germany, Sweden and China. The prominent players involved in this field are Mitsubishi Materials Corp., Sandvik Aktiebolag, Hitachi Ltd., Sumitomo Electric Industries Ltd., OC Oerlikon Corp., and so on. The outstanding potential of nanostructured thin film tribological coatings is yet to be fully unravelled and, therefore, immense opportunities are available in future for microstructurally engineered novel coatings to enhance their performance and functionality by many folds.

  10. Engineering helimagnetism in MnSi thin films

    Science.gov (United States)

    Zhang, S. L.; Chalasani, R.; Baker, A. A.; Steinke, N.-J.; Figueroa, A. I.; Kohn, A.; van der Laan, G.; Hesjedal, T.

    2016-01-01

    Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ˜18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

  11. Engineering helimagnetism in MnSi thin films

    Directory of Open Access Journals (Sweden)

    S. L. Zhang

    2016-01-01

    Full Text Available Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

  12. Engineering helimagnetism in MnSi thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, S. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Chalasani, R.; Kohn, A. [Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv 6997801, Tel Aviv (Israel); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom); Steinke, N.-J. [ISIS, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0QX (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom)

    2016-01-15

    Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

  13. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    International Nuclear Information System (INIS)

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  14. Optical, structural and electrochromic behavior studies on nanocomposite thin film of aniline, o-toluidine and WO3

    Science.gov (United States)

    Najafi-Ashtiani, Hamed; Bahari, Ali

    2016-08-01

    In the field of materials for electrochromic (EC) applications much attention was paid to the derivatives of aniline. We report on the optical, structural and electrochromic properties of electrochromic thin film based on composite of WO3 nanoparticles and copolymer of aniline and o-toluidine prepared by electrochemical polymerization method on fluorine doped tin oxide (FTO) coated glass. The thin film was studied by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The morphology of prepared thin film was characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and the thermal gravimetric analysis (TGA) as well. The optical spectra of nanocomposite thin film were characterized in the 200-900 nm wavelength range and EC properties of nanocomposite thin film were studied by cyclic voltammetry (CV). The calculation of optical band gaps of thin film exhibited that the thin film has directly allowed transition with the values of 2.63 eV on first region and 3.80 eV on second region. Dispersion parameters were calculated based on the single oscillator model. Finally, important parameters such as dispersion energy, oscillator energy and lattice dielectric constant were determined and compared with the data from other researchers. The nonlinear optical properties such as nonlinear optical susceptibility, nonlinear absorption coefficient and nonlinear refractive index were extracted. The obtained results of nanocomposite thin film can be useful for the optoelectronic applications.

  15. Final report for EMP instrumentation project DNA IACRO 75-815: magnetic thin film sensors

    International Nuclear Information System (INIS)

    Hsieh, E.J.; Miller, D.E.; Vindelov, K.E.; Brown, T.G.

    1975-01-01

    The magnetic thin film current sensor/recorder is a passive device which responds to the peak current and pulse shape of a transient event. The transient current information becomes a permanent record on the film. The thin film device is small, low mass and reusable. It has been proven to be fast (less than 1/2 nanosecond response), radiation hard and applicable to peak current measurement of both CW and pulsed signals. The sensors were initially developed at LLL for pulse-energy measurement on exploding wires. Later the Defense Nuclear Agency sponsored the present project to develop the magnetic thin film devices as EMP diagnostic tools. The Air Force Weapons Lab supported the work to test the field capabilities of the thin film devices at ARES test facility, Kirtland AFB. Sandia Lab is now using a new version of the thin film sensors to monitor the transient current induced by intense radiation in their hybrid microcircuits. Also, a field test has been planned with Naval Electronics Laboratory Center where the thin film sensors are to be used to measure peak CW current caused by rf radiation. Research results are summarized

  16. Thin Films in the Photovoltaic Industry

    International Nuclear Information System (INIS)

    Jaeger-Waldau, A.

    2008-03-01

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  17. Product reliability and thin-film photovoltaics

    Science.gov (United States)

    Gaston, Ryan; Feist, Rebekah; Yeung, Simon; Hus, Mike; Bernius, Mark; Langlois, Marc; Bury, Scott; Granata, Jennifer; Quintana, Michael; Carlson, Carl; Sarakakis, Georgios; Ogden, Douglas; Mettas, Adamantios

    2009-08-01

    Despite significant growth in photovoltaics (PV) over the last few years, only approximately 1.07 billion kWhr of electricity is estimated to have been generated from PV in the US during 2008, or 0.27% of total electrical generation. PV market penetration is set for a paradigm shift, as fluctuating hydrocarbon prices and an acknowledgement of the environmental impacts associated with their use, combined with breakthrough new PV technologies, such as thin-film and BIPV, are driving the cost of energy generated with PV to parity or cost advantage versus more traditional forms of energy generation. In addition to reaching cost parity with grid supplied power, a key to the long-term success of PV as a viable energy alternative is the reliability of systems in the field. New technologies may or may not have the same failure modes as previous technologies. Reliability testing and product lifetime issues continue to be one of the key bottlenecks in the rapid commercialization of PV technologies today. In this paper, we highlight the critical need for moving away from relying on traditional qualification and safety tests as a measure of reliability and focus instead on designing for reliability and its integration into the product development process. A drive towards quantitative predictive accelerated testing is emphasized and an industrial collaboration model addressing reliability challenges is proposed.

  18. Nanopolar reorientation in ferroelectric thin films

    International Nuclear Information System (INIS)

    Hubert, C.; Levy, J.; Rivkin, T. V.; Carlson, C.; Parilla, P. A.; Perkins, J. D.; Ginley, D. S.

    2001-01-01

    The influence of varying oxygen pressure P(O 2 ) during the growth of Ba 0.4 Sr 0.6 TiO 3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O 2 ). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (P c =85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O 2 )=P c

  19. Understanding polymorphism in organic semiconductor thin films through nanoconfinement.

    Science.gov (United States)

    Diao, Ying; Lenn, Kristina M; Lee, Wen-Ya; Blood-Forsythe, Martin A; Xu, Jie; Mao, Yisha; Kim, Yeongin; Reinspach, Julia A; Park, Steve; Aspuru-Guzik, Alán; Xue, Gi; Clancy, Paulette; Bao, Zhenan; Mannsfeld, Stefan C B

    2014-12-10

    Understanding crystal polymorphism is a long-standing challenge relevant to many fields, such as pharmaceuticals, organic semiconductors, pigments, food, and explosives. Controlling polymorphism of organic semiconductors (OSCs) in thin films is particularly important given that such films form the active layer in most organic electronics devices and that dramatic changes in the electronic properties can be induced even by small changes in the molecular packing. However, there are very few polymorphic OSCs for which the structure-property relationships have been elucidated so far. The major challenges lie in the transient nature of metastable forms and the preparation of phase-pure, highly crystalline thin films for resolving the crystal structures and evaluating the charge transport properties. Here we demonstrate that the nanoconfinement effect combined with the flow-enhanced crystal engineering technique is a powerful and likely material-agnostic method to identify existing polymorphs in OSC materials and to prepare the individual pure forms in thin films at ambient conditions. With this method we prepared high quality crystal polymorphs and resolved crystal structures of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), including a new polymorph discovered via in situ grazing incidence X-ray diffraction and confirmed by molecular mechanic simulations. We further correlated molecular packing with charge transport properties using quantum chemical calculations and charge carrier mobility measurements. In addition, we applied our methodology to a [1]benzothieno[3,2-b][1]1benzothiophene (BTBT) derivative and successfully stabilized its metastable form.

  20. Liquid crystals for organic thin-film transistors

    Science.gov (United States)

    Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

    2015-04-01

    Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

  1. Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

    Science.gov (United States)

    Torabi, Solmaz; Cherry, Megan; Duijnstee, Elisabeth A; Le Corre, Vincent M; Qiu, Li; Hummelen, Jan C; Palasantzas, George; Koster, L Jan Anton

    2017-08-16

    The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

  2. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  3. Direct observation of phase transition of GeSbTe thin films by Atomic Force Microscope

    Energy Technology Data Exchange (ETDEWEB)

    Yang Fei [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang Rui; Geng Lei; Tong Liang; Xu Jun [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Su Weining; Yu Yao [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Ma Zhongyuan; Chen Kunji [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2012-10-01

    Graphical abstract: Nano-sized marks on GST thin film were fabricated using Conductive-AFM (Atomic Force Microscope). The AFM morphology images show that the marks are ablated at the center and a raised ring surrounding it. Highlights: Black-Right-Pointing-Pointer Microstructure of GeSbTe thin films was characterized by XRD and AFM. Black-Right-Pointing-Pointer Annealing and applying electrical field can induce crystallization on thin film. Black-Right-Pointing-Pointer Conductive-AFM was used to modify the surface of GeSbTe thin film. - Abstract: GeSbTe (GST) thin films were deposited on quartz substrates using electron beam evaporation system and then annealed in nitrogen atmosphere at different temperatures, ranging from 20 Degree-Sign C to 300 Degree-Sign C. X-ray diffraction (XRD) and Atomic Force microscope (AFM) measurements were used to characterize the as-deposited and post-annealed thin films. Annealing treatment was found to induce changes on microstructure, surface roughness and grain size, indicating that with the increase of annealing temperature, the amorphous GST films first changed to face-centered-cubic (fcc) phase and then the stable hexagonal (hex) phase. Meanwhile, conductive-AFM (C-AFM) was used to produce crystallized GST dots on thin films. I-V spectroscopy results show that GST films can switch from amorphous state to crystalline state at threshold voltage. After switching, I-V curve exhibits ohmic characteristic, which is usually observed in crystallized GST films. By applying repeated I-V spectroscopies on the thin films, crystallized nuclei were observed. As the times of I-V spectroscopies increases, the area of written dots increases, and the center of the mark begin to ablate. The AFM images show that the shape of marks is an ablated center with a raised ring surrounding it.

  4. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  5. Structural, morphological and optical properties of Na and K dual doped CdS thin film

    International Nuclear Information System (INIS)

    Mageswari, S.; Dhivya, L.; Palanivel, Balan; Murugan, Ramaswamy

    2012-01-01

    Highlights: ► Effect of incorporation of Na, K and Na,K dual dopants into CdS thin film was investigated. ► Thin films were prepared by simple chemical bath deposition technique. ► The XRD analysis revealed cubic phase for all the investigated films. ► AFM analysis revealed uniform surface with crack free and densely packed morphology for CdS:Na,K film. ► The band gap value increases for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. - Abstract: CdS, sodium doped CdS (CdS:Na), potassium doped CdS (CdS:K) and sodium and potassium dual doped CdS (CdS:Na,K) thin films were deposited on glass substrate by chemical bath deposition (CBD) technique. Structural, morphological and optical properties of the as-grown films were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and ultraviolet visible (UV–VIS) spectroscopy. The XRD analysis revealed cubic phase for ‘as-deposited’ CdS, CdS:Na, CdS:K and CdS:Na,K dual doped thin films. AFM analysis revealed uniform film surface with crack free and densely packed morphology for CdS:Na,K film. The absorption edge in the optical absorption spectra shifts towards the shorter wavelength for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. The optical band gap of CdS, CdS:Na, CdS:K and CdS:Na,K thin films was found to be 2.31, 2.35, 2.38 and 2.34 eV, respectively.

  6. Sputtered highly oriented PZT thin films for MEMS applications

    Science.gov (United States)

    Kalpat, Sriram S.

    Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

  7. Fabrication and characterization of optical sensors using metallic core-shell thin film nanoislands for ozone detection

    Science.gov (United States)

    Addanki, Satish; Nedumaran, D.

    2017-07-01

    Core-Shell nanostructures play a vital role in the sensor field owing to their performance improvements in sensing characteristics and well-established synthesis procedures. These nanostructures can be ingeniously tuned to achieve tailored properties for a particular application of interest. In this work, an Ag-Au core-shell thin film nanoislands with APTMS (3-Aminopropyl trimethoxysilane) and PVA (Polyvinyl alcohol) binding agents was modeled, synthesized and characterized. The simulation results were used to fabricate the sensor through chemical route. The results of this study confirmed that the APTMS based Ag-Au core-shell thin film nanoislands offered a better performance over the PVA based Ag-Au core-shell thin film nanoislands. Also, the APTMS based Ag-Au core-shell thin film nanoislands exhibited better sensitivity towards ozone sensing over the other types, viz., APTMS/PVA based Au-Ag core-shell and standalone Au/Ag thin film nanoislands.

  8. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  9. Simulated Thin-Film Growth and Imaging

    Science.gov (United States)

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  10. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  11. Thin films for the manipulation of light

    International Nuclear Information System (INIS)

    Piegari, Angela; Sytchkova, Anna

    2015-01-01

    The manipulation of light is typically accomplished by a series of optical surfaces on which the incident beam is reflected, or through which the beam is transmitted. Thin film coatings help to modify the behavior of such surfaces for obtaining the desired result: antireflection coatings to reduce reflection losses, high-reflectance mirrors, filters to divide or combine beams of different wavelengths, and many other types. The amount of light that is transmitted or reflected depends on the optical parameters of the materials and on interference phenomena in thin-film structures. Dedicated software is available to design the proper coating for each requirement. There are several applications of optical thin films, many of them are useful in the everyday life, many others are dedicated to scientific purposes, as will be described in this paper [it

  12. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  13. Restructuring in block copolymer thin films

    DEFF Research Database (Denmark)

    Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

    2017-01-01

    Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

  14. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  15. Nanostructured thin films as functional coatings

    Energy Technology Data Exchange (ETDEWEB)

    Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

    2010-06-15

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  16. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  17. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  18. Effect of different complexing agents on the properties of chemical-bath-deposited ZnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun; Wei, Aixiang, E-mail: weiax@gdut.edu.cn; Zhao, Yu

    2014-03-05

    Highlights: • To fabricate high quality ZnS films need to promote the ion-by-ion process and restrain cluster-by-cluster process. • The complexation ability of tri-sodium citrate is stronger than that of hydrazine hydrate. • The nucleation density of nuclei determine the performance of ZnS thin films. -- Abstract: Zinc sulfide (ZnS) thin films were deposited on glass substrates using the chemical bath deposition (CBD) technique. The effects of different complexing agents (tri-sodium citrate, hydrazine hydrate) and their concentrations on the structure, composition, morphology, optical properties and growth mechanism of ZnS thin films were investigated. The results indicated that the chemical-bath-deposited ZnS thin films exhibit poor crystallinity and a high Zn/S atomic ratio with an average transmittance of 75% in the range of visible light. The ZnS thin films prepared using hydrazine hydrate as the complexing agent present a more compact surface, a smaller average particle size, and a sharper absorption edge at 300–340 nm compared with those prepared using tri-sodium citrate. Based on our experimental observations and analysis, we conclude that the predominant growth mechanism of ZnS thin films is an ion-by-ion process. The nucleation density of Zn(OH){sub 2} nuclei on the substrate in the initial stage produces the different morphologies and properties of the ZnS thin films prepared using the two complexing agents.

  19. Oxygen engineering of HfO{sub 2-x} thin films grown by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU-Darmstadt (Germany); Zaumseil, Peter; Schroeder, Thomas [IHP, Frankfurt, Oder (Germany)

    2010-07-01

    Reactive molecular beam epitaxy (R-MBE) is an ideal tool for tailoring physical properties of thin films to specific needs. For the development of cutting-edge oxides for thin film applications a precise control of oxygen defects is crucial. R-MBE in combination with rf-activated oxygen allows reproducibly growing oxide thin films with precise oxidation conditions enabling oxygen engineering. R-MBE was used to grow Hf and HfO{sub 2{+-}}{sub x} thin films with different oxidation conditions on sapphire single crystal substrates. Structural characterization was carried out using rotating anode x-ray diffraction revealing highly textured to epitaxial thin films on c-cut sapphire. Furthermore, switching of film orientation by varying the oxidation conditions was observed demonstrating the role of oxygen in the growth procedure. The investigation of electrical properties using a four probe measurement setup showed conductivities in the range of 1000 {mu}{omega}cm for oxygen deficient HfO{sub 2-x} thin films. Optical properties were investigated using a photospectrometer and additionally x-ray photoelectron spectroscopy was carried out to study the band gap and valence states. Both techniques were used to monitor the oxygen content in deficient HfO{sub 2-x} thin films. Our results demonstrate the importance of oxygen engineering even in the case of 'simple' oxides.

  20. Thin Films for X-ray Optics

    Science.gov (United States)

    Conley, Raymond

    Focusing x-rays with refraction requires an entire array of lens instead of a single element, each contributing a minute amount of focusing to the system. In contrast to their visible light counterparts, diffractive optics require a certain depth along the optical axis in order to provide sufficient phase shift. Mirrors reflect only at very shallow angles. In order to increase the angle of incidence, contribution from constructive interference within many layers needs to be collected. This requires a multilayer coating. Thin films have become a central ingredient for many x-ray optics due to the ease of which material composition and thickness can be controlled. Chapter 1 starts with a short introduction and survey of the field of x-ray optics. This begins with an explanation of reflective multilayers. Focusing optics are presented next, including mirrors, zone plates, refractive lenses, and multilayer Laue lens (MLL). The strengths and weaknesses of each "species" of optic are briefly discussed, alongside fabrication issues and the ultimate performance for each. Practical considerations on the use of thin-films for x-ray optics fabrication span a wide array of topics including material systems selection and instrumentation design. Sputter deposition is utilized exclusively for the work included herein because this method of thin-film deposition allows a wide array of deposition parameters to be controlled. This chapter also includes a short description of two deposition systems I have designed. Chapter 2 covers a small sampling of some of my work on reflective multilayers, and outlines two of the deposition systems I have designed and built at the Advanced Photon Source. A three-stripe double multilayer monochromator is presented as a case study in order to detail specifications, fabrication, and performance of this prolific breed of x-ray optics. The APS Rotary Deposition System was the first deposition system in the world designed specifically for multilayer

  1. Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

    Science.gov (United States)

    Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

    2018-04-24

    2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Chalcogenide phase-change thin films used as grayscale photolithography materials.

    Science.gov (United States)

    Wang, Rui; Wei, Jingsong; Fan, Yongtao

    2014-03-10

    Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

  3. Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

    Science.gov (United States)

    Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

    2012-01-05

    In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

  4. Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

    International Nuclear Information System (INIS)

    Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Ha Park, Sung; Jeon, Sohee; Jeong, Jun-Ho

    2017-01-01

    Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors. (paper)

  5. Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

    Science.gov (United States)

    Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

    2018-06-01

    The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.

  6. a Brief Survey on Basic Properties of Thin Films for Device Application

    Science.gov (United States)

    Rao, M. C.; Shekhawat, M. S.

    Thin film materials are the key elements of continued technological advances made in the fields of optoelectronic, photonic and magnetic devices. Thin film studies have directly or indirectly advanced many new areas of research in solid state physics and chemistry which are based on phenomena uniquely characteristic of the thickness, geometry and structure of the film. The processing of materials into thin films allows easy integration into various types of devices. Thin films are extremely thermally stable and reasonably hard, but they are fragile. On the other hand organic materials have reasonable thermal stability and are tough, but are soft. Thin film mechanical properties can be measured by tensile testing of freestanding films and by the micro beam cantilever deflection technique, but the easiest way is by means of nanoindentation. Optical experiments provide a good way of examining the properties of semiconductors. Particularly measuring the absorption coefficient for various energies gives information about the band gaps of the material. Thin film materials have been used in semiconductor devices, wireless communications, telecommunications, integrated circuits, rectifiers, transistors, solar cells, light-emitting diodes, photoconductors and light crystal displays, lithography, micro- electromechanical systems (MEMS) and multifunctional emerging coatings, as well as other emerging cutting technologies.

  7. Modifying thin film diamond for electronic applications

    International Nuclear Information System (INIS)

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  8. Machine Vision based Micro-crack Inspection in Thin-film Solar Cell Panel

    Directory of Open Access Journals (Sweden)

    Zhang Yinong

    2014-09-01

    Full Text Available Thin film solar cell consists of various layers so the surface of solar cell shows heterogeneous textures. Because of this property the visual inspection of micro-crack is very difficult. In this paper, we propose the machine vision-based micro-crack detection scheme for thin film solar cell panel. In the proposed method, the crack edge detection is based on the application of diagonal-kernel and cross-kernel in parallel. Experimental results show that the proposed method has better performance of micro-crack detection than conventional anisotropic model based methods on a cross- kernel.

  9. Electrode size and boundary condition independent measurement of the effective piezoelectric coefficient of thin films

    Directory of Open Access Journals (Sweden)

    M. Stewart

    2015-02-01

    Full Text Available The determination of the piezoelectric coefficient of thin films using interferometry is hindered by bending contributions. Using finite element analysis (FEA simulations, we show that the Lefki and Dormans approximations using either single or double-beam measurements cannot be used with finite top electrode sizes. We introduce a novel method for characterising piezoelectric thin films which uses a differential measurement over the discontinuity at the electrode edge as an internal reference, thereby eliminating bending contributions. This step height is shown to be electrode size and boundary condition independent. An analytical expression is derived which gives good agreement with FEA predictions of the step height.

  10. Geometrical contribution to the anomalous Nernst effect in TbFeCo thin films

    Science.gov (United States)

    Ando, Ryo; Komine, Takashi

    2018-05-01

    The geometrical contribution to the anomalous Nernst effect in magnetic thin films was experimentally investigated by varying the aspect ratios and electrode configurations. The bar-type electrode configuration induces a short-circuit current near both edges of electrodes and decreases the effective Nernst voltage, while the point-contact (PC) electrode exploits the intrinsic Nernst voltage. In a sample with PC electrodes, as the sample width along the transverse direction of the thermal flow increases, the Nernst voltage increases monotonically. Thus, a much wider element with PC electrodes enables us to bring out a larger Nernst voltage by utilizing perpendicularly magnetized thin films.

  11. Electrochemical fabrication of nanoporous polypyrrole thin films

    International Nuclear Information System (INIS)

    Li Mei; Yuan Jinying; Shi Gaoquan

    2008-01-01

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)

  12. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  13. Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hyun-Woo; Choi, Min-Jun; Jo, Yongcheol; Chung, Kwun-Bum, E-mail: kbchung@dongguk.edu

    2014-12-01

    Highlights: • We studied the low temperature process of InGaZnO oxide thin film transistor. • Hydorgen irradiation was used for low temperature process below 150 °C. • Using hydrogen irradiation, field effect mobility of IGZO TFT was enhanced to ∼5 cm{sup 2} /Vs. • We examined the origin of improvement of device performance via electronic structure. - Abstract: Device performance of radio frequency (RF) sputtered InGaZnO (IGZO) thin film transistors (TFTs) were improved using combination post-treatment with hydrogen irradiation and low temperature annealing at 150 °C. Under the combination treatment, IGZO TFTs were significantly enhanced without changing physical structure and chemical composition. On the other hand, the electronic structure represents a dramatically modification of the chemical bonding states, band edge states below the conduction band, and band alignment. Compared to the hydrogen irradiation or low temperature annealing, the combination treatment induces the increase of oxygen deficient chemical bonding states, the shallow band edge state below the conduction band, and the smaller energy difference of conduction band offset, which can generate the increase in charge carrier and enhance the device performance.

  14. Enhanced optical band-gap of ZnO thin films by sol-gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Raghu, P., E-mail: dpr3270@gmail.com; Naveen, C. S.; Shailaja, J.; Mahesh, H. M., E-mail: hm-mahesh@rediffmail.com [Thin Film and Solar Cell Laboratory, Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore -560056 (India)

    2016-05-06

    Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The results of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.

  15. Fabrication and optical properties of SnS thin films by SILAR method

    International Nuclear Information System (INIS)

    Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata

    2008-01-01

    Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO 4 and Na 2 S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra

  16. Ridge Minimization of Ablated Morphologies on ITO Thin Films Using Squared Quasi-Flat Top Beam

    Directory of Open Access Journals (Sweden)

    Hoon-Young Kim

    2018-03-01

    Full Text Available In this study, we explore the improvements in pattern quality that was obtained with a femtosecond laser with quasi-flat top beam profiles at the ablated edge of indium tin oxide (ITO thin films for the patterning of optoelectronic devices. To ablate the ITO thin films, a femtosecond laser is used that has a wavelength and pulse duration of 1030 nm and 190 fs, respectively. The squared quasi-flat top beam is obtained from a circular Gaussian beam using slits with varying x-y axes. Then, the patterned ITO thin films are measured using both scanning electron and atomic force microscopes. In the case of the Gaussian beam, the ridge height and width are approximately 39 nm and 1.1 μm, respectively, whereas, when the quasi-flat top beam is used, the ridge height and width are approximately 7 nm and 0.25 μm, respectively.

  17. One-step synthesis of PbSe-ZnSe composite thin film

    Directory of Open Access Journals (Sweden)

    Abe Seishi

    2011-01-01

    Full Text Available Abstract This study investigates the preparation of PbSe-ZnSe composite thin films by simultaneous hot-wall deposition (HWD from multiple resources. The XRD result reveals that the solubility limit of Pb in ZnSe is quite narrow, less than 1 mol%, with obvious phase-separation in the composite thin films. A nanoscale elemental mapping of the film containing 5 mol% PbSe indicates that isolated PbSe nanocrystals are dispersed in the ZnSe matrix. The optical absorption edge of the composite thin films shifts toward the low-photon-energy region as the PbSe content increases. The use of a phase-separating PbSe-ZnSe system and HWD techniques enables simple production of the composite package.

  18. Structural and optical investigations of sol–gel derived lithium titanate thin films

    International Nuclear Information System (INIS)

    Łapiński, M.; Kościelska, B.; Sadowski, W.

    2012-01-01

    Highlights: ► Lithium titanate thin films were deposited on glass substrates by sol–gel method. ► After annealing at 550 °C samples had lithium titanate spinel structure. ► Above 80 h of annealing mixture of lithium titanate and titanium oxides was appeared. ► Optical transmittance decreased with increasing of annealing time. - Abstract: In this paper structural and optical studies of lithium titanate (LTO) thin films are presented. Nanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible lithium titanate phase was obtained after 20 h annealing. Increasing of annealing time over 20 h revealed appearance of titanium oxides phase. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength with increasing of annealing time. The optical band gap was calculated for direct allowed and indirect allowed transitions from optical absorption spectra.

  19. Determining thin film properties by fitting optical transmittance

    International Nuclear Information System (INIS)

    Klein, J.D.; Yen, A.; Cogan, S.F.

    1990-01-01

    The optical transmission spectra of rf sputtered tungsten oxide films on glass substrates were modeled to determine absorption edge behavior, film thickness, and index of refraction. Removal of substrate reflection and absorption phenomena from the experimental spectra allowed direct examination of thin film optical characteristics. The interference fringe pattern allows determination of the film thickness and the dependence of the real index of refraction on wavelength. Knowledge of the interference fringe behavior in the vicinity of the absorption edge was found essential to unambiguous determination of the optical band gap. In particular, the apparently random deviations commonly observed in the extrapolation of as-acquired data are eliminated by explicitly considering interference fringe phenomena. The multivariable optimization fitting scheme employed allows air-film-substrate reflection losses to be compensated without making reflectance measurements

  20. The effects of inorganic surface treatments on photogenerated carrier mobility and lifetime in PbSe quantum dot thin films

    Energy Technology Data Exchange (ETDEWEB)

    Goodwin, E.D.; Straus, Daniel B. [Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104 (United States); Gaulding, E. Ashley [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Murray, Christopher B. [Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104 (United States); Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Kagan, Cherie R., E-mail: kagan@seas.upenn.edu [Department of Chemistry, University of Pennsylvania, Philadelphia, PA 19104 (United States); Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States)

    2016-06-01

    Highlights: • Na{sub 2}Se and PbCl{sub 2} treatments modified the surface chemistry of PbSe quantum dots. • Excess Se (Pb) p-doped (n-doped) PbSe quantum dot thin films. • Carrier mobility and lifetime were studied using time-resolved microwave conductivity. • Mobility increased as the Fermi level approached the band edges. - Abstract: We used flash-photolysis, time-resolved microwave conductivity (TRMC) to probe the carrier mobility and lifetime in PbSe quantum dot (QD) thin films treated with solutions of the metal salts of Na{sub 2}Se and PbCl{sub 2}. The metal salt treatments tuned the Pb:Se stoichiometry and swept the Fermi energy throughout the QD thin film bandgap. A stoichiometric imbalance favoring excess Se heavily p-doped the QD thin film, shifted the Fermi energy toward the valence band, and yielded the highest TRMC mobility and lifetime. Introducing Pb first compensated the p-doping and shifted the Fermi level through mid-gap, decreasing the TRMC mobility. Further Pb addition created an excess of Pb, n-doped the QD thin film, moved the Fermi level to near the conduction band, and again increased the TRMC mobility. The increase in TRMC mobility as the Fermi energy was shifted toward the band edges by non-stoichiometry is consistent with the QD thin film density of states.

  1. Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

    2014-09-15

    The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

  2. Enhanced pinning in superconducting thin films with graded pinning landscapes

    Science.gov (United States)

    Motta, M.; Colauto, F.; Ortiz, W. A.; Fritzsche, J.; Cuppens, J.; Gillijns, W.; Moshchalkov, V. V.; Johansen, T. H.; Sanchez, A.; Silhanek, A. V.

    2013-05-01

    A graded distribution of antidots in superconducting a-Mo79Ge21 thin films has been investigated by magnetization and magneto-optical imaging measurements. The pinning landscape has maximum density at the sample border, decreasing linearly towards the center. Its overall performance is noticeably superior than that for a sample with uniformly distributed antidots: For high temperatures and low fields, the critical current is enhanced, whereas the region of thermomagnetic instabilities in the field-temperature diagram is significantly suppressed. These findings confirm the relevance of graded landscapes on the enhancement of pinning efficiency, as recently predicted by Misko and Nori [Phys. Rev. B 85, 184506 (2012)].

  3. Josephson soliton oscillators in a superconducting thin film resonator

    DEFF Research Database (Denmark)

    Holm, J.; Mygind, Jesper; Pedersen, Niels Falsig

    1993-01-01

    Josephson soliton oscillators integrated in a resonator consisting of two closely spaced coplanar superconducting microstrips have been investigated experimentally. Pairs of long 1-D Josephson junctions with a current density of about 1000 A/cm2 were made using the Nb-AlOx-Nb trilayer technique....... Different modes of half-wave resonances in the thin-film structure impose different magnetic field configurations at the boundaries of the junctions. The DC I-V characteristic shows zero-field steps with a number of resonator-induced steps. These structures are compared to RF-induced steps generated...

  4. Multilayer Thin Films Sequential Assembly of Nanocomposite Materials

    CERN Document Server

    Decher, Gero

    2012-01-01

    This second, comprehensive edition of the pioneering book in this field has been completely revised and extended, now stretching to two volumes. The result is a comprehensive summary of layer-by-layer assembled, truly hybrid nanomaterials and thin films, covering organic, inorganic, colloidal, macromolecular and biological components, plus the assembly of nanoscale films derived from them on surfaces. Praise for the first edition: "... highly recommended to anyone interested in the field... and to scientists and researchers active in materials development..." –Polymer News With contri

  5. Thermal conductivity model for nanoporous thin films

    Science.gov (United States)

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  6. Intelligent Processing of Ferroelectric Thin Films

    Science.gov (United States)

    1994-05-31

    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  7. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and

  8. Amperometric Noise at Thin Film Band Electrodes

    DEFF Research Database (Denmark)

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael

    2012-01-01

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...

  9. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  10. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  11. Novel chemical analysis for thin films

    International Nuclear Information System (INIS)

    Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji

    1991-01-01

    Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)

  12. Flexible thin-film NFC tags

    NARCIS (Netherlands)

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.

    2015-01-01

    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance

  13. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  14. Influence of static and dynamic dipolar fields in bulk YIG/thin film NiFe systems probed via spin rectification effect

    Energy Technology Data Exchange (ETDEWEB)

    Soh, Wee Tee, E-mail: a0046479@u.nus.edu [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); Tay, Z.J. [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); Yakovlev, N.L. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Peng, Bin [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Ong, C.K. [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore 117411 (Singapore)

    2017-03-15

    The characteristics of the static and dynamic components of the dipolar fields originating from a bulk polycrystalline yttrium iron garnet (YIG) substrate are probed by depositing a NiFe (Permalloy) layer on it, which acts as a detector. By measuring dc voltages generated via spin rectification effect (SRE) within the NiFe layer under microwave excitation, we characterize the influence of dipolar fields from bulk YIG on the NiFe layer. It is found that the dynamic YIG dipolar fields modify the self-SRE of NiFe, driving its own rectification voltages within the NiFe layer, an effect we term as non-local SRE. This non-local SRE only occurs near the simultaneous resonance of both YIG and NiFe. On the other hand, the static dipolar field from YIG manifests itself as a negative anisotropy in the NiFe layer which shifts the latter’s ferromagnetic resonance frequency. - Highlights: • We demonstrate the quantification of both the static and dynamic components of the dipolar fields due to a YIG slab. • The detection and characterisation of such dipolar fields are important in many magnetic applications such as magnonics. • The dipolar fields can pose potential pitfalls if not properly considered in certain spin-electronics systems.

  15. Study on Buckling of Stiff Thin Films on Soft Substrates as Functional Materials

    Science.gov (United States)

    Ma, Teng

    generated submicron buckles of film/polymer are also used as an optical mask to produce submicron periodic patterns with large filling ratio in contrast to generating only ˜100 nm edge submicron patterns in conventional near-field soft contact photolithography. This thesis aims to deepen understanding of buckling behavior of thin films on compliant substrates and, in turn, to harness the fundamental properties of such instability for diverse applications.

  16. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  17. Electron mass anisotropy of BaZrO3 doped YBCO thin films in pulsed magnetic fields up to 30 T

    International Nuclear Information System (INIS)

    Palonen, H; Huhtinen, H; Paturi, P; Shakhov, M A

    2013-01-01

    The high anisotropy of the critical current density in the high-temperature superconductor YBa 2 Cu 3 O 6+x can be compensated by changing the pinning landscape, for example, through doping with BaZrO 3 . We measure the change due to BaZrO 3 doping in the effective electron mass anisotropy, γ, by resistive measurements of the upper critical field in pulsed high magnetic fields. It is found that the angular dependence of the upper critical field follows the Blatter scaling up to 30 T but the irreversibility field does not. We also report a significant reduction in the effective electron mass anisotropy from 6.0 to 3.4 by BaZrO 3 doping. (paper)

  18. Field geometry dependence of magnetotransport in epitaxial La2/3Ca1/3MnO3 thin films

    International Nuclear Information System (INIS)

    Saldarriaga, W.; Baca, E.; Prieto, P.; Moran, O.; Grube, K.; Fuchs, D.; Schneider, R.

    2006-01-01

    In-plane and out-of-plane magnetoresistance measurements on epitaxial ∼200nm thin (001)-oriented films of high oxygen pressure DC-sputtering grown manganite La 2/3 Ca 1/3 MnO 3 were carried out. Single crystal (001)-SrTiO 3 substrates were used. The samples featured a Curie temperature T C ∼260K and a magnetic moment μ(T->0K)∼3μ B per Mn atom. Magnetocrystalline anisotropy with the easy axes lying on film plane was evidenced by recording the in-plane and out-of-plane magnetization loops at temperatures, below T C , in magnetic field strengths up to 5T. Evidence for anisotropic magnetotransport in these films was provided by electric measurements in a wide temperature range up to 6T magnetic field strengths applied both perpendicular and parallel to the film plane. In both applied magnetic field geometries, current and magnetic field were maintained perpendicular to each other. Neither low-field magnetoresistance nor large magnetoresistance hysteresis were observed on these samples, suggesting that the tensile strain imposed by the substrate in the first monolayers has partially been released. In addition, by rotating the sample 360 o around an axis parallel to film plane, in magnetic fields >=2T, a quadratic sinusoidal dependence of the magnetoresistance on the polar angle θ was observed. These results can be consistently interpreted using a generalized version of the theory of anisotropic magnetoresistance in transition-metal ferromagnets

  19. Critical current behaviour of YBCO thin films described by vortex pinning on low-angle domain boundaries and vortex creep

    International Nuclear Information System (INIS)

    Golovchanskiy, I.A.; Pan, A.V.; Fedoseev, S.A.; Shcherbakova, O.V.; Dou, S.X.

    2012-01-01

    A pinning potential for vortices was introduced assuming plastic pinning of vortex lattice on chains of out-of-plane individual edge dislocations that form low-angle domain boundaries in high quality YBa 2 Cu 3 O 7 thin films. Using this pinning potential with the classical Kim-Anderson vortex creep approach a model for critical current dependence on field has been successfully developed. The model shows a plausible description of J c (B a ) over the entire field range. Electrical field criterion is incorporated providing the ability to compare measurements made with different criteria (including different measurement techniques). Applicability of this model has been verified by experimental data obtained by direct transport and magnetisation measurements on high quality films grown by pulsed laser deposition. Pinning potential obtained from the fitting procedure is consistent with theoretical predictions. The model showed that the effective pinning landscape changes under influence of external conditions.

  20. Magnetic properties dependence on the coupled effects of magnetic fields on the microstructure of as-deposited and post-annealed Co/Ni bilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Franczak, Agnieszka [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science, Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Levesque, Alexandra, E-mail: alexandra.levesque@univ-reims.fr [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France); Coïsson, Marco [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Li, Donggang [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France); Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 110004 Shenyang (China); Barrera, Gabriele [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Università di Torino, Dipartimento di Chimica, 10125 Torino (Italy); Celegato, Federica [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Wang, Qiang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 110004 Shenyang (China); Tiberto, Paola [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Chopart, Jean-Paul [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France)

    2014-12-15

    Magnetic films and multilayers are the focus of much attention motivated mainly by their wide range of applications, such as magnetic data storage devices and sensors. The magnetic multilayer structures are normally prepared through physical means of deposition, as molecular beam epitaxy (MBE) or sputtering. However, there are already examples of materials produced by electrochemical routes, which share with the other deposition techniques a high sensitivity of magnetic and transport properties of the samples on their crystallographic and chemical structure. In addition, electrochemical deposition allows growing structures with high aspect ratio, which are not possible to obtain by MBE deposition followed by lithographic processes. The present work investigates the Co/Ni bilayered nanocrystalline films produced through the temperature-elevated electrochemical deposition, and modified by annealing carried out also under an external magnetic field. The results indicate an increase of the coercive field of deposited Co/Ni bilayers, when the electrodeposition process was conducted under magnetic field of 1 T. The annealing processing caused further remarkable increase of the coercive field of as-prepared bilayers that has been preserved under magnetic annealing conditions. The magnetic properties are discussed in terms of samples microstructure. In as-prepared samples the in-plane magnetization was observed, while high temperature treatment, causing microstructural changes in the film, resulted also in appearance of a small component of magnetization oriented perpendicularly to the films’ plane that could have been observed by MFM analysis. The induced perpendicular magnetization component in the post-annealed samples was a result of the magnetic field applied in the perpendicular direction to the samples’ surface during annealing treatment. - Highlights: • Co deposits were obtained at high electrolyte temperature under applied B-field. • The

  1. Magnetic properties dependence on the coupled effects of magnetic fields on the microstructure of as-deposited and post-annealed Co/Ni bilayer thin films

    International Nuclear Information System (INIS)

    Franczak, Agnieszka; Levesque, Alexandra; Coïsson, Marco; Li, Donggang; Barrera, Gabriele; Celegato, Federica; Wang, Qiang; Tiberto, Paola; Chopart, Jean-Paul

    2014-01-01

    Magnetic films and multilayers are the focus of much attention motivated mainly by their wide range of applications, such as magnetic data storage devices and sensors. The magnetic multilayer structures are normally prepared through physical means of deposition, as molecular beam epitaxy (MBE) or sputtering. However, there are already examples of materials produced by electrochemical routes, which share with the other deposition techniques a high sensitivity of magnetic and transport properties of the samples on their crystallographic and chemical structure. In addition, electrochemical deposition allows growing structures with high aspect ratio, which are not possible to obtain by MBE deposition followed by lithographic processes. The present work investigates the Co/Ni bilayered nanocrystalline films produced through the temperature-elevated electrochemical deposition, and modified by annealing carried out also under an external magnetic field. The results indicate an increase of the coercive field of deposited Co/Ni bilayers, when the electrodeposition process was conducted under magnetic field of 1 T. The annealing processing caused further remarkable increase of the coercive field of as-prepared bilayers that has been preserved under magnetic annealing conditions. The magnetic properties are discussed in terms of samples microstructure. In as-prepared samples the in-plane magnetization was observed, while high temperature treatment, causing microstructural changes in the film, resulted also in appearance of a small component of magnetization oriented perpendicularly to the films’ plane that could have been observed by MFM analysis. The induced perpendicular magnetization component in the post-annealed samples was a result of the magnetic field applied in the perpendicular direction to the samples’ surface during annealing treatment. - Highlights: • Co deposits were obtained at high electrolyte temperature under applied B-field. • The

  2. Nanostructured thin film coatings with different strengthening effects

    Directory of Open Access Journals (Sweden)

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  3. Oxide thin films for spintronics application growth and characterization

    OpenAIRE

    Popovici, Nicoleta, 1973-

    2009-01-01

    Tese de doutoramento, Física (Física), Universidade de Lisboa, Faculdade de Ciências, 2009 During my PhD research I have synthesized thin films of a material known as a diluted magnetic semiconductor (DMS) using the pulsed laser deposition (PLD) technique. This material is envisioned to be of importance in the emerging field of spintronics where both the charge and the spin of the carriers can be combined to yield unique functionalities. It was envisaged that if spin polarized charge carri...

  4. Ideal glass transitions in thin films: An energy landscape perspective

    Science.gov (United States)

    Truskett, Thomas M.; Ganesan, Venkat

    2003-07-01

    We introduce a mean-field model for the potential energy landscape of a thin fluid film confined between parallel substrates. The model predicts how the number of accessible basins on the energy landscape and, consequently, the film's ideal glass transition temperature depend on bulk pressure, film thickness, and the strength of the fluid-fluid and fluid-substrate interactions. The predictions are in qualitative agreement with the experimental trends for the kinetic glass transition temperature of thin films, suggesting the utility of landscape-based approaches for studying the behavior of confined fluids.

  5. Semiclassical electronic transport in MnAs thin films

    International Nuclear Information System (INIS)

    Helman, C.; Milano, J.; Steren, L.; Llois, A.M.

    2008-01-01

    Magneto-transport experiments have been recently performed on MnAs thin films. Hall effect and transverse magnetoresistance measurements have shown interesting and, until now, unknown results. For instance, the transverse magnetoresistance shows no saturation in the presence of very high magnetic fields. In order to understand the contribution of the electronic band structure to the non-saturating magnetoresistance, we perform ab initio calculations, using the Wien2K code and analyze the magneto-transport properties within the semiclassical approximation. We show that non-saturation may be due to the presence of open orbits on the majority Fermi surface

  6. Semiclassical electronic transport in MnAs thin films

    Energy Technology Data Exchange (ETDEWEB)

    Helman, C. [Dpto de Fisica, ' Juan Jose Giambiagi' , Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires (Argentina); Unidad de Actividad Fisica, Centro Atomico Constituyentes, Comision Nacional de Energia Atomica, Buenos Aires (Argentina)], E-mail: helman@tandar.cnea.gov.ar; Milano, J.; Steren, L. [Departamento de Fisica, Centro Atomico Bariloche, Comision Nacional de Energia Atomica, S.C. Bariloche (Argentina); Llois, A.M. [Dpto de Fisica, ' Juan Jose Giambiagi' , Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires (Argentina); Unidad de Actividad Fisica, Centro Atomico Constituyentes, Comision Nacional de Energia Atomica, Buenos Aires (Argentina)

    2008-07-15

    Magneto-transport experiments have been recently performed on MnAs thin films. Hall effect and transverse magnetoresistance measurements have shown interesting and, until now, unknown results. For instance, the transverse magnetoresistance shows no saturation in the presence of very high magnetic fields. In order to understand the contribution of the electronic band structure to the non-saturating magnetoresistance, we perform ab initio calculations, using the Wien2K code and analyze the magneto-transport properties within the semiclassical approximation. We show that non-saturation may be due to the presence of open orbits on the majority Fermi surface.

  7. Structural, dielectric and ferroelectric characterization of PZT thin films

    Directory of Open Access Journals (Sweden)

    Araújo E.B.

    1999-01-01

    Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

  8. Ferromagnetic resonance linewidth and two-magnon scattering in Fe1-xGdx thin films

    Directory of Open Access Journals (Sweden)

    Sheng Jiang

    2017-05-01

    Full Text Available Magnetization dynamics of Fe1-xGdx thin films (0 ≤ x ≤ 22% has been investigated by ferromagnetic resonance (FMR. Out-of-plane magnetic field orientation dependence of resonance field and linewidth has been measured. Resonance field and FMR linewidth have been fitted by the free energy of our system and Landau-Lifshitz-Gilbert (LLG equation. It is found that FMR linewidth contains huge extrinsic components including two-magnon scattering contribution and inhomogeneous broadening for FeGd alloy thin films. In addition, the intrinsic linewidth and real damping constants have been obtained by extracting the extrinsic linewidth. The damping constant enhanced from 0.011 to 0.038 as Gd dopants increase from 0 to 22% which originates from the enhancement of L-S coupling in FeGd thin films. Besides, gyromagnetic ratio, Landé factor g and magnetic anisotropy of our films have also been determined.

  9. PZT Thin-Film Micro Probe Device with Dual Top Electrodes

    Science.gov (United States)

    Luo, Chuan

    Lead zirconate titanate (PZT) thin-film actuators have been studied intensively for years because of their potential applications in many fields. In this dissertation, a PZT thin-film micro probe device is designed, fabricated, studied, and proven to be acceptable as an intracochlear acoustic actuator. The micro probe device takes the form of a cantilever with a PZT thin-film diaphragm at the tip of the probe. The tip portion of the probe will be implanted in cochlea later in animal tests to prove its feasibility in hearing rehabilitation. The contribution of the dissertation is three-fold. First, a dual top electrodes design, consisting of a center electrode and an outer electrode, is developed to improve actuation displacement of the PZT thin-film diaphragm. The improvement by the dual top electrodes design is studied via a finite element model. When the dimensions of the dual electrodes are optimized, the displacement of the PZT thin-film diaphragm increases about 30%. A PZT thin-film diaphragm with dual top electrodes is fabricated to prove the concept, and experimental results confirm the predictions from the finite element analyses. Moreover, the dual electrode design can accommodate presence of significant residual stresses in the PZT thin-film diaphragm by changing the phase difference between the two electrodes. Second, a PZT thin-film micro probe device is fabricated and tested. The fabrication process consists of PZT thin-film deposition and deep reactive ion etching (DRIE). The uniqueness of the fabrication process is an automatic dicing mechanism that allows a large number of probes to be released easily from the wafer. Moreover, the fabrication is very efficient, because the DRIE process will form the PZT thin-film diaphragm and the special dicing mechanism simultaneously. After the probes are fabricated, they are tested with various possible implantation depths (i.e., boundary conditions). Experimental results show that future implantation depths

  10. Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature

    KAUST Repository

    Pattanasattayavong, Pichaya; Ndjawa, Guy Olivier Ngongang; Zhao, Kui; Chou, Kang Wei; Yaacobi-Gross, Nir; O'Regan, Brian C.; Amassian, Aram; Anthopoulos, Thomas D.

    2013-01-01

    The optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.

  11. Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3 thin films via field-assisted oxygen vacancy modulation

    Science.gov (United States)

    Wong, Hon Fai; Ng, Sheung Mei; Cheng, Wang Fai; Liu, Yukuai; Chen, Xinxin; von Nordheim, Danny; Mak, Chee Leung; Dai, Jiyan; Ploss, Bernd; Leung, Chi Wah

    2017-12-01

    We investigated the tunability of the transport and magnetic properties in 7.5 nm La0.7Sr0.3MnO3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P(VDF-TrFE) as the gate insulator. Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TC of the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TC by more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

  12. Nonlinear dielectric response in ferroelectric thin films

    Directory of Open Access Journals (Sweden)

    Lente, M. H.

    2004-08-01

    Full Text Available Electrical permittivity dependence on electric external bias field was investigated in PZT thin films. The results revealed the existence of two mechanisms contributing to the electrical permittivity. The first one was related to the domain reorientation, which was responsible for a strong no linear dielectric behavior, acting only during the poling process. The second mechanism was associated with the domain wall vibrations, which presented a reasonable linear electrical behavior with the applied bias field, contributing always to the permittivity independently of the poling state of the sample. The results also indicated that the gradual reduction of the permittivity with the increase of the bias field strength may be related to the gradual bending of the domain walls. It is believed that the domain wall bending induces a hardening and/or a thinning of the walls, thus reducing the electrical permittivity. A reinterpretation of the model proposed in the literature to explain the dielectric characteristics of ferroelectric materials at high electric field regime is proposed.

    Se ha estudiado la dependencia de la permitividad eléctrica con un campo bias externo en láminas delgadas de PZT. Los resultados revelaron la existencia de dos mecanismos que contribuyen a la permitividad eléctrica. El primero está relacionado con la reorientación de dominios, actúa sólo durante el proceso de polarización y es responsable de un comportamiento dieléctrico fuertemente no lineal. El segundo mecanismo se asocia a las vibraciones de las paredes de dominio, presentando un comportamiento eléctrico razonablemente lineal con el campo bias aplicado, contribuyendo siempre a la permitividad independientemente del estado de polarización de la muestra. Los resultados indicaron también que la reducción gradual de la permitividad con el aumento de la fuerza del campo bias podría estar relacionada con el “bending” gradual de las paredes de dominio

  13. Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes

    Science.gov (United States)

    Kirley, M. P.; Novakovic, B.; Sule, N.; Weber, M. J.; Knezevic, I.; Booske, J. H.

    2012-03-01

    We report experiments and analysis of field emission from metallic knife-edge cathodes, which are sputter-coated with thin films of lanthanum hexaboride (LaB6), a low-work function material. The emission current is found to depend sensitively on the thickness of the LaB6 layer. We find that films thinner than 10 nm greatly enhance the emitted current. However, cathodes coated with a thicker layer of LaB6 are observed to emit less current than the uncoated metallic cathode. This result is unexpected due to the higher work function of the bare metal cathode. We show, based on numerical calculation of the electrostatic potential throughout the structure, that the external (LaB6/vacuum) barrier is reduced with respect to uncoated samples for both thin and thick coatings. However, this behavior is not exhibited at the internal (metal/LaB6) barrier. In thinly coated samples, electrons tunnel efficiently through both the internal and external barrier, resulting in current enhancement with respect to the uncoated case. In contrast, the thick internal barrier in thickly coated samples suppresses current below the value for uncoated samples in spite of the lowered external barrier. We argue that this coating thickness variation stems from a relatively low (no higher than 1018 cm-3) free carrier density in the sputtered polycrystalline LaB6.

  14. Tribological performance of near equiatomic and Ti-rich NiTi shape memory alloy thin films

    International Nuclear Information System (INIS)

    Tillmann, Wolfgang; Momeni, Soroush

    2015-01-01

    Near equiatomic and Ti-rich NiTi shape memory alloy thin films were magnetron sputtered with the same processing parameters and thickness of 3 μm. The microstructure, composition, shape memory behavior, mechanical and tribological properties of the deposited thin films were analyzed by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), differential scanning calorimetry (DSC), nanoindentation, ball-on-disc, scratch test, and three dimensional (3D) optical microscopy. The obtained results clearly show how the crystallization evolution and precipitation formation of these two sets of thin films can drastically influence their mechanical and tribological performances

  15. Structural, electrical and optical properties of nanostructured ZrO2 thin film deposited by SILAR method

    Science.gov (United States)

    Salodkar, R. V.; Belkhedkar, M. R.; Nemade, S. D.

    2018-05-01

    Successive Ionic Layer Adsorption and Reaction (SILAR) method has been employed to deposit nanocrystalline ZrO2 thin film of thickness 91 nm onto glass substrates using ZrOCl2.8H2O and NaOH as cationic and anionic precursors respectively. The structural and surface morphological characterizations have been carried out by means of X-ray diffraction and field emission scanning electron microscopy confirms the nanocrystalline nature of ZrO2 thin film. The direct optical band gap and activation energy of the ZrO2 thin film are found to be 4.74 and 0.80eV respectively.

  16. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    Science.gov (United States)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  17. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  18. A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

    Science.gov (United States)

    Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

    2011-05-01

    A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

  19. n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

    Science.gov (United States)

    Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

    2018-03-01

    We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

  20. Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Maw-Shung Lee

    2014-01-01

    Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

  1. Structural, compositional and optical properties of spin coated MoO3 thin film

    Science.gov (United States)

    Jain, Vishva; Shah, Dimple; Patel, K. D.; Zankat, Chetan

    2018-05-01

    The attraction towards the MoO3 thin film is due to its wide range of application base on its properties. Its application in the field of energy storage and conversion as a cathode material for rechargeable lithium ion battery, hole selective layer in solar cell and in pseudocapacitors makes it more attractive material. Taking in consideration, economical route and tailoring advantage of film formation we have used spin coating method for the synthesis of the film with Ammonium heptamolybdate (NH4)6Mo7O24 4H2O) and distilled water as the precursor and solvent respectively on the glass substrate. The method also provides the large area synthesis of the film which is beneficial for the commercial applications. The film was spin coated at 1600 rpm with 4 % weight per volume ratio. The film so formed was annealed at 300 °C for 3 hours. The structural investigation was done by the X-Ray diffraction technique which shows the thin film of polycrystalline type. The average crystallize size is about 50 nm. The composition of the film was studied with the help of EDAX. The optical properties were studied by the photoluminescence and UV Spectroscopy. The results from both the characterization are well matched with each other. Photoluminescence studies show band to band emission observed at 416 nm shown in the fig. 5. From UV spectroscopy, using transmission and absorption spectra we observed the band gap edge around 3 eV. This is in accordance with the photoluminescence result.

  2. Determining Confounding Sensitivities In Eddy Current Thin Film Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Gros, Ethan; Udpa, Lalita; Smith, James A.; Wachs, Katelyn

    2016-07-01

    Determining Confounding Sensitivities In Eddy Current Thin Film Measurements Ethan Gros, Lalita Udpa, Electrical Engineering, Michigan State University, East Lansing MI 48824 James A. Smith, Experiment Analysis, Idaho National Laboratory, Idaho Falls ID 83415 Eddy current (EC) techniques are widely used in industry to measure the thickness of non-conductive films on a metal substrate. This is done using a system whereby a coil carrying a high-frequency alternating current is used to create an alternating magnetic field at the surface of the instrument's probe. When the probe is brought near a conductive surface, the alternating magnetic field will induce ECs in the conductor. The substrate characteristics and the distance of the probe from the substrate (the coating thickness) affect the magnitude of the ECs. The induced currents load the probe coil affecting the terminal impedance of the coil. The measured probe impedance is related to the lift off between coil and conductor as well as conductivity of the test sample. For a known conductivity sample, the probe impedance can be converted into an equivalent film thickness value. The EC measurement can be confounded by a number of measurement parameters. It is the goal of this research to determine which physical properties of the measurement set-up and sample can adversely affect the thickness measurement. The eddy current testing is performed using a commercially available, hand held eddy current probe (ETA3.3H spring loaded eddy probe running at 8 MHz) that comes with a stand to hold the probe. The stand holds the probe and adjusts the probe on the z-axis to help position the probe in the correct area as well as make precise measurements. The signal from the probe is sent to a hand held readout, where the results are recorded directly in terms of liftoff or film thickness. Understanding the effect of certain factors on the measurements of film thickness, will help to evaluate how accurate the ETA3.3H spring

  3. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  4. Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

    Science.gov (United States)

    Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

    2018-05-01

    The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

  5. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  6. Electrochemical fabrication of nanoporous polypyrrole thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

    2008-04-30

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)

  7. Magnetite thin films: A simulational approach

    International Nuclear Information System (INIS)

    Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent ν=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed

  8. Highly coercive thin-film nanostructures

    International Nuclear Information System (INIS)

    Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

    2005-01-01

    The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

  9. High efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  10. Quantifying clustering in disordered carbon thin films

    International Nuclear Information System (INIS)

    Carey, J.D.

    2006-01-01

    The quantification of disorder and the effects of clustering in the sp 2 phase of amorphous carbon thin films are discussed. The sp 2 phase is described in terms of disordered nanometer-sized conductive sp 2 clusters embedded in a less conductive sp 3 matrix. Quantification of the clustering of the sp 2 phase is estimated from optical as well as from electron and nuclear magnetic resonance methods. Unlike in other disordered group IV thin film semiconductors, we show that care must be exercised in attributing a meaning to the Urbach energy extracted from absorption measurements in the disordered carbon system. The influence of structural disorder, associated with sp 2 clusters of similar size, and topological disorder due to undistorted clusters of different sizes is also discussed. Extensions of this description to other systems are also presented

  11. Thin film photovoltaic panel and method

    Science.gov (United States)

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  12. Strain quantification in epitaxial thin films

    International Nuclear Information System (INIS)

    Cushley, M

    2008-01-01

    Strain arising in epitaxial thin films can be beneficial in some cases but devastating in others. By altering the lattice parameters, strain may give a thin film properties hitherto unseen in the bulk material. On the other hand, heavily strained systems are prone to develop lattice defects in order to relieve the strain, which can cause device failure or, at least, a decrease in functionality. Using convergent beam electron diffraction (CBED) and high-resolution transmission electron microscopy (HRTEM), it is possible to determine local strains within a material. By comparing the results from CBED and HRTEM experiments, it is possible to gain a complete view of a material, including the strain and any lattice defects present. As well as looking at how the two experimental techniques differ from each other, I will also look at how results from different image analysis algorithms compare. Strain in Si/SiGe samples and BST/SRO/MgO capacitor structures will be discussed.

  13. Critical behavior of ferromagnetic Ising thin films

    International Nuclear Information System (INIS)

    Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

  14. Method of formation of thin film component

    Energy Technology Data Exchange (ETDEWEB)

    Wada, Chikara; Kato, Kinya

    1988-04-16

    In the production process of component which is carrying thin film device, such as thin film transistor, acid treatment is applied for etching or for preventing contamination. In case of barium borsilicate glass base, the base is affected by the acid treatment resulting the decrease of transparency. To avoid the effect, deposition of SiO/sub 2/ layer on the surface of the base is usually applied. This invention relates to the protective method of barium borosilicate surface by harnessing the effect of coexisting ion in the acid treatment bath. The method is to add 0.03-5 mol/l of phosphoric acid or its salt in the bath. By the effect of coexisting ion, barium borsilicate glass surface was protected from the damage. (2 figs)

  15. Structures and electronic properties of thin-films of polycyclic aromatic hydrocarbons

    International Nuclear Information System (INIS)

    Natsume, Yutaka; Minakata, Takashi; Aoyagi, Takeshi

    2009-01-01

    We report the fabrication and characterization of organic thin-film transistors (TFTs) using several polycyclic aromatic hydrocarbons (PAHs). Pentacene, ovalene, dibenzocoronene and hexabenzocoronene were deposited as organic semiconductors on silicon wafers with gold electrodes as the bottom-contact configuration of the TFTs. The pentacene TFT showed the highest field-effect mobility of more than 0.1 cm 2 /Vs in comparison with the other PAHs. The results clarified that the high field-effect mobility of the pentacene thin film is due to large grain size and intrinsic electronic properties

  16. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

    2014-01-01

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  17. Thin film solar cell technology in Germany

    International Nuclear Information System (INIS)

    Diehl, W.; Sittinger, V.; Szyszka, B.

    2005-01-01

    Within the scope of limited nonrenewable energy resources and the limited capacity of the ecosystem for greenhouse gases and nuclear waste, sustainability is one important target in the future. Different energy scenarios showed the huge potential for photovoltaics (PV) to solve this energy problem. Nevertheless, in the last decade, PV had an average growth rate of over 20% per year. In 2002, the solar industry delivered more than 500 MWp/year of photovoltaic generators [A. Jaeger-Waldau, A European Roadmap for PV R and D, E-MRS Spring Meeting, (2003)]. More than 85% of the current production involves crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock. On the other hand the so-called second generation thin film solar cells based on a-Si, Cu(In,Ga)(Se,S 2 (CIGS) or CdTe have material thicknesses of a few microns as a result of their direct band gap. Also, the possibility of circuit integration offers an additional cost reduction potential. Especially in Germany, there are a few companies who focus on thin film solar cells. Today, there are two manufacturers with production lines: the Phototronics (PST) division of RWE-Schott Solar with a-Si thin film technology and the former Antec Solar GmbH (now Antec Solar Energy GmbH) featuring the CdTe technology. A pilot line based on CIGS technology is run by Wuerth Solar GmbH. There is also a variety of research activity at other companies, namely, at Shell Solar, Sulfurcell Solartechnik GmbH, Solarion GmbH and the CIS-Solartechnik GmbH. We will give an overview on research activity on various thin film technologies, as well as different manufacturing and production processes in the companies mentioned above. (Author)

  18. Cellulose triacetate, thin film dielectric capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  19. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  20. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  1. Carrier mobility and crystal perfection of tetracene thin film FET

    International Nuclear Information System (INIS)

    Moriguchi, N.; Nishikawa, T.; Anezaki, T.; Unno, A.; Tachibana, M.; Kojima, K.

    2006-01-01

    It is well-known that the carrier mobility of an organic field effect semiconductor (FET) depended on the crystal quality and/or the crystal perfection of the organic thin films [T.W. Kelly, D.V. Muyres, P.F. Baude, T.P. Smith, T.D. Jones, Mater. Res. Soc. Symp. Proc. 771 (2003) L6.5.1; D.J. Gundlach, J.A. Nichols, L. Zhou, T.N. Jackson, Appl. Phys. Lett. 80 (2002) 2925; H.K. Lauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, J. Appl. Phys. 92 (2002) 5259; M. Shtein, J. Mapel, J.B. Benziger, S.R. Forrest, Appl. Phys. Lett. 81 (2002) 268; D. Knipp, R.A. Street, A.R. Volkel, Appl. Phys. Lett. 82 (2003) 3907; R. Ruiz, A.C. Mayer, G.G. Malliaras, Appl. Phys. Lett. 85 (2004) 4926; R.W.I. de Boer, M.E. Gershenson, A.F. Morpurgo, V. Podzorov, Phys. Stat. Sol. A 201 (2004) 1031]. To improve the crystal quality of the thin film many efforts were made. One of the important improvements was the surface treatment of the substrate. The tetracene thin film FET (top contact structure) was fabricated using the substrate, which was coated by a spin-coating method with a 0.1% poly α-methylstyrene (AMS) solution. The crystal quality was improved by this treatment so that the carrier mobility was higher than that of non-treatment. The maximum mobility of the AMS-treated sample was obtained to be 0.12 cm 2 /V s

  2. Thickness and roughness measurements of nano thin films by interference

    Directory of Open Access Journals (Sweden)

    A Sabzalipour

    2011-06-01

    Full Text Available In the standard optical interference fringes approach, by measuring shift of the interference fringes due to step edge of thin film on substrate, thickness of the layer has already been measured. In order to improve the measurement precision of this popular method, the interference fringes intensity curve was extracted and analyzed before and after the step preparation. By this method, one can measure a few nanometers films thickness. In addition, using the interference fringes intensity curve and its fluctuations, the roughness of surface is measured within a few nanometers accuracy. Comparison of our results with some direct methods of thickness and roughness measurements, i.e. using surface profilemeter and atomic force microscopy confirms the accuracy of the suggested improvements.

  3. Unraveling the magnetic properties of BiFe0.5Cr0.5O3 thin films

    Directory of Open Access Journals (Sweden)

    G. Vinai

    2015-11-01

    Full Text Available We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3 (BFCO thin films grown on (001 (110 and (111 oriented SrTiO3 (STO substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field.

  4. A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

    Science.gov (United States)

    Cai, M. X.; Yao, R. H.

    2018-03-01

    Temperature dependent electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are investigated considering the percolation and multiple trapping and release (MTR) conduction mechanisms. Carrier-density and temperature dependent carrier mobility in a-IGZO is derived with the Boltzmann transport equation, which is affected by potential barriers above the conduction band edge with Gaussian-like distributions. The free and trapped charge densities in the channel are calculated with Fermi-Dirac statistics, and the field effective mobility of a-IGZO TFTs is then deduced based on the MTR theory. Temperature dependent drain current model for a-IGZO TFTs is finally derived with the obtained low field mobility and free charge density, which is applicable to both non-degenerate and degenerate conductions. This physical-based model is verified by available experiment results at various temperatures.

  5. Precise measurement of the transverse piezoelectric coefficient for thin films on anisotropic substrate

    International Nuclear Information System (INIS)

    Chun, Doo-Man; Sato, Masashi; Kanno, Isaku

    2013-01-01

    In this study, we propose a reliable measurement method for the effective transverse piezoelectric coefficient for thin films especially on anisotropic substrate. This coefficient for piezoelectric Pb(Zr, Ti)O 3 (PZT) thin films was calculated by measuring the electric field-induced tip displacement of unimorph cantilevers composed of PZT thin films and Si substrates. We evaluated the reliability of the proposed measurement method by comparing it with numerical analysis and confirmed that the relative error of the piezoelectric coefficient (e 31,f ) was less than 1%. We prepared 16 different unimorph cantilevers composed of identical PZT films on different Si beam geometries that had various substrate thicknesses and cantilever widths. Although the effective transverse piezoelectric coefficient e 31,f of PZT thin films ranged from −6.5 to −14 C/m 2 as a function of the applied voltage, the difference among the 16 samples with an applied voltage of 25 V was within 10%. These results demonstrate that the proposed measurement method has sufficient reliability and can be used to evaluate the effective transverse piezoelectric coefficient e 31,f of thin films.

  6. Thickness characteristics of YBaCuO system thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Furuhashi, Hideo; Jinno, Makoto; Takashima, Osamu; Uchida, Yoshiyuki; Maeda, Akinori; Kojima, Kenzo; Ochiai, Shizuyasu; Ohashi, Asao

    1994-01-01

    The practical use of oxide high temperature superconductors for electronics field has been advanced. The oxide high temperature superconductor thin films is very sensitive to the production conditions, and their making with good reproducibility is difficult. In this study, the method of producing the thin films having good quality with good reproducibility by RF magnetron sputtering, and the relation of the film thickness with the superconductivity characteristics of YBaCuO system thin films in the different methods of substrate washing were examined. The sputtering conditions are shown. For the purpose of preventing the worsening of the film quality due to the reverse sputtering of oxygen negative ions to the thin film surface, sputtering gas pressure was set up high at 30 Pa. The film thickness and the temperature-resistance characteristics were measured. The experimental method and the experimental results are reported. By keeping the temperature on substrate surfaces constant, the reproducibility in the production of the thin films was improved remarkably. The effect of substrate washing was large. (K.I.)

  7. Morphological, elemental, and optical characterization of plasma polymerized n-butyl methacrylate thin films

    Science.gov (United States)

    Nasrin, Rahima; Hossain, Khandker S.; Bhuiyan, A. H.

    2018-05-01

    Plasma polymerized n-butyl methacrylate (PPnBMA) thin films of varying thicknesses were prepared at room temperature by AC plasma polymerization system using a capacitively coupled parallel plate reactor. Field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), energy-dispersive X-ray (EDX) analysis, and ultraviolet-visible (UV-Vis) spectroscopic investigation have been performed to study the morphological, elemental, and optical properties of the PPnBMA thin films, respectively. The flat and defect-free nature of thin films were confirmed by FESEM and AFM images. With declining plasma power, average roughness and root mean square roughness increase. Allowed direct transition ( E gd) and indirect transition ( E gi) energy gaps were found to be 3.64-3.80 and 3.38-3.45 eV, respectively, for PPnBMA thin films of different thicknesses. Values of E gd as well as E gi increase with the increase of thickness. The extinction coefficient, Urbach energy, and steepness parameter were also determined for these thin films.

  8. Direct growth of superconducting NdFeAs(O,F) thin films by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Chihara, Masashi, E-mail: chihara@iku.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Sumiya, Naoki; Arai, Kenta [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, Yokosuka-shi, Kanagawa 240-0101 (Japan); Hatano, Takafumi; Iida, Kazumasa; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-11-15

    Highlights: • Highly textured NdFeAs(O,F) thin films were obtained by a direct growth method. • Enhancing the migration was crucial to realize the direct growth. • The critical current density exceeded 3 MA/cm{sup 2} at self-field and 1 MA/cm{sup 2} at 9 T. • A two-dimensional growth was confirmed by the observation of surface morphology. - Abstract: We report on the growth of NdFeAs(O,F) superconducting thin films by molecular beam epitaxy without having a NdOF secondary layer that was necessary for fluorine doping in our previous studies. The key to realizing the direct growth of a superconducting film was the enhancement of migration of the raw materials on the substrate, which was accomplished by two steps. Firstly, we increased the growth temperature that improved the crystalline quality of parent NdFeAsO thin films. Secondly, the atmosphere in the chamber during the growth was improved by changing the crucible material of the Fe source cell. Highly textured NdFeAs(O,F) thin films with critical temperatures up to 50 K were obtained, and terraces were observed by atomic force microscope, indicating a two-dimensional growth. However, precipitates were also found on the surface, which suggests that enhancing further the migration is necessary for obtaining a NdFeAs(O,F) thin film with a better quality.

  9. Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

    Science.gov (United States)

    Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

    2017-03-01

    The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

  10. Modulation of magnetic coercivity in Ni thin films by reversible control of strain

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Wen-Chin, E-mail: wclin@ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Huang, Chia-Wei; Ting, Yi-Chieh; Lo, Fang-Yuh [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Chern, Ming-Yau [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

    2015-05-01

    In this study, we demonstrated the magnetoelectric control of magnetic thin films. (111)-textured Pd/Ni/Pd thin films were prepared on mica/lead zirconium titanate (PZT) substrates for the investigation. The reversible modulation of magnetic coercivity in Ni films was observed through the electric-voltage-controlled strain variation from the PZT substrate. For 14 nm Ni film, the applied electric field of ±350 V/m led to ±0.5% strain variation of PZT, which was transferred to ±0.4% strain variation of Pd/Ni/Pd thin films on mica, and resulted in ∓17 Oe (∓5% of the preliminary magnetic coercivity). The reversible modulation of magnetic coercivity is supposed to be caused by the voltage-controlled strain through the magneto-elastic effect. - Highlights: • The magnetoelectric control of the magnetic coercivity of Pd/Ni/Pd thin films was demonstrated. • The ±0.4% strain variation of 14 nm Ni thin films resulted in ±17 Oe change of H{sub c}. • The reversible modulation of H{sub c} is supposed to be caused by the magneto-elastic effect.

  11. Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

    2010-07-15

    Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  12. Microstructure, vertical strain control and tunable functionalities in self-assembled, vertically aligned nanocomposite thin films

    International Nuclear Information System (INIS)

    Chen, Aiping; Bi, Zhenxing; Jia, Quanxi; MacManus-Driscoll, Judith L.; Wang, Haiyan

    2013-01-01

    Vertically aligned nanocomposite (VAN) oxide thin films have recently stimulated a significant amount of research interest owing to their novel architecture, vertical interfacial strain control and tunable material functionalities. In this work, the growth mechanisms of VAN thin films have been investigated by varying the composite material system, the ratio of the two constituent phases, and the thin film growth conditions including deposition temperature and oxygen pressure as well as growth rate. It has been shown that thermodynamic parameters, elastic and interfacial energies and the multiple phase ratio play dominant roles in the resulting microstructure. In addition, vertical interfacial strain has been observed in BiFeO 3 (BFO)- and La 0.7 Sr 0.3 MnO 3 (LSMO)-based VAN thin film systems; the vertical strain could be tuned by the growth parameters and selection of a suitable secondary phase. The tunability of physical properties such as dielectric loss in BFO:Sm 2 O 3 VAN and low-field magnetoresistance in LSMO-based VAN systems has been demonstrated. The enhancement and tunability of those physical properties have been attributed to the unique VAN architecture and vertical strain control. These results suggest that VAN architecture with novel microstructure and unique vertical strain tuning could provide a general route for tailoring and manipulating the functionalities of oxide thin films

  13. Mesoscale simulations of confined Nafion thin films

    Science.gov (United States)

    Vanya, P.; Sharman, J.; Elliott, J. A.

    2017-12-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  14. Preventing Thin Film Dewetting via Graphene Capping.

    Science.gov (United States)

    Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

    2017-09-01

    A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Thin films prepared from tungstate glass matrix

    Energy Technology Data Exchange (ETDEWEB)

    Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

    2008-01-30

    Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.

  16. Magnetic surfaces, thin films, and multilayers

    International Nuclear Information System (INIS)

    Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

    1992-01-01

    This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

  17. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  18. study in polymer thin films

    Indian Academy of Sciences (India)

    TECS

    Datt 1980) at constant polarizing field but at a different polarizing temperature. ... The thickness of sample was measured by the compound microscope in conjunction with an occoulometer having a least count of .... depth. As the dopant concentration is increased, the dopant molecules start bridging the gap separating the.

  19. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  20. Superconductivity in disordered thin films

    International Nuclear Information System (INIS)

    Ramakrishnan, T.V.

    1989-01-01

    The physics of low-dimensional systems has developed in a remarkable way over the last decade and has accelerated over the last few years, in particular because of the discovery of the new high temperature superconductors. The new developments started more than fifteen years ago with the discovery of the unexpected quasi-one-dimensional character of the TTF-TCNQ. Since then the field of conducting quasi-one-dimensional organic system have been rapidly growing. Parallel to the experimental work there has been an important theoretical development of great conceptual importance, such as charge density waves, soliton-like excitations, fractional charges, new symmetry properties etc. A new field of fundamental importance was the discovery of the Quantum Hall Effect in 1980. This field is still expanding with new experimental and theoretical discoveries. In 1986, then, came the totally unexpected discovery of high temperature superconductivity which started an explosive development. The three areas just mentioned formed the main themes of the Symposium. They do not in any way exhaust the progress in low-dimensional physics. We should mention the recent important development with both two-dimensional and one-dimensional and even zero-dimensional structures (quantum dots). The physics of mesoscopic systems is another important area where the low dimensionality is a key feature. Because of the small format of this Symposium we could unfortunately not cover these areas

  1. Nanoscale Control of Exchange Bias with BiFeO3 Thin Films

    NARCIS (Netherlands)

    Martin, Lane W.; Chu, Ying-Hao; Holcomb, Mikel B.; Huijben, Mark; Yu, Pu; Han, Shu-Jen; Lee, Donkoun; Wang, Shan X.; Ramesh, R.

    2008-01-01

    We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions − an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field

  2. Vortex pinning in superconducting Nb thin films deposited on nanoporous alumina templates

    DEFF Research Database (Denmark)

    Vinckx, W.; Vanacken, J.; Moshchalkov, V.V.

    2006-01-01

    We present a study of magnetization and transport properties of superconducting Nb thin films deposited on nanoporous aluminium oxide templates. Periodic oscillations in the critical temperature vs. field, matching effects in fields up to 700 mT and strongly enhanced critical currents were observed...

  3. Pinning enhancement in MgB2 superconducting thin films by ...

    Indian Academy of Sciences (India)

    The magnetic field dependence of the critical current density Jc was calculated from the M–H loops and magnetic field dependence of ... MgB2 thin film; Fe2O3 nanoparticles; critical current density; r-plane Al2O3 substrate. 1. Introduction. The discovery of ... It was thought that from these cal- culations, one can choose an ...

  4. Mechanics of evolving thin film structures

    Science.gov (United States)

    Liang, Jim

    In the Stranski-Krastanov system, the lattice mismatch between the film and the substrate causes the film to break into islands. During annealing, both the surface energy and the elastic energy drive the islands to coarsen. Motivated by several related studies, we suggest that stable islands should form when a stiff ceiling is placed at a small gap above the film. We show that the role of elasticity is reversed: with the ceiling, the total elastic energy stored in the system increases as the islands coarsen laterally. Consequently, the islands select an equilibrium size to minimize the combined elastic energy and surface energy. In lithographically-induced self-assembly, when a two-phase fluid confined between parallel substrates is subjected to an electric field, one phase can self-assemble into a triangular lattice of islands in another phase. We describe a theory of the stability of the island lattice. The islands select the equilibrium diameter to minimize the combined interface energy and electrostatic energy. Furthermore, we study compressed SiGe thin film islands fabricated on a glass layer, which itself lies on a silicon wafer. Upon annealing, the glass flows, and the islands relax. A small island relaxes by in-plane expansion. A large island, however, wrinkles at the center before the in-plane relaxation arrives. The wrinkles may cause significant tensile stress in the island, leading to fracture. We model the island by the von Karman plate theory and the glass layer by the Reynolds lubrication theory. Numerical simulations evolve the in-plane expansion and the wrinkles simultaneously. We determine the critical island size, below which in-plane expansion prevails over wrinkling. Finally, in devices that integrate dissimilar materials in small dimensions, crack extension in one material often accompanies inelastic deformation in another. We analyze a channel crack advancing in an elastic film under tension, while an underlayer creeps. We use a two

  5. Enhanced electrical properties in bilayered ferroelectric thin films

    Science.gov (United States)

    Zhang, Hao; Long, WeiJie; Chen, YaQing; Guo, DongJie

    2013-03-01

    Sr2Bi4Ti5O18 (SBTi) single layered and Sr2Bi4Ti5O18/Pb(Zr0.53Ti0.47)O3 (SBTi/PZT) bilayered thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD). The related structural characterizations and electrical properties have been comparatively investigated. X-ray diffraction reveals that both films have crystallized into perovskite phases and scanning electron microscopy shows the sharp interfaces. Both films show well-saturated ferroelectric hysteresis loops, however, compared with the single layered SBTi films, the SBTi/PZT bilayered films have significantly increased remnant polarization ( P r) and decreased coercive field ( E c), with the applied field of 260 kV/cm. The measured P r and E c of SBTi and SBTi/PZT films were 7.9 μC/cm2, 88.1 kV/cm and 13.0 μC/cm2, 51.2 kV/cm, respectively. In addition, both films showed good fatigue-free characteristics, the switchable polarization decreased by 9% and 11% of the initial values after 2.2×109 switching cycles for the SBTi single layered films and the SBTi/PZT bilayered films, respectively. Our results may provide some guidelines for further optimization of multilayered ferroelectric thin films.

  6. Structural and optical properties of ZnO–SnO{sub 2} mixed thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Tharsika, T., E-mail: tharsika@siswa.um.edu.my; Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my; Sabri, M.F.M., E-mail: faizul@um.edu.my

    2014-05-02

    Nanocrystalline ZnO–SnO{sub 2} mixed thin films were deposited by the spray pyrolysis technique at various substrate temperatures during deposition. The mixed films were prepared in the range of 20.9 at.% to 73.4 at.% by altering the Zn/(Sn + Zn) atomic ratio in the starting solution. Morphology, crystal structures, and optical properties of the films were characterized by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultraviolet–visible and photoluminescence (PL) spectroscopy. XRD analysis reveals that the crystallinity of the Sn-rich mixed thin films increases with increasing substrate temperatures. FESEM images show that the grain size of mixed thin films is smaller compared to that of pure ZnO and SnO{sub 2} thin films. A drop in the thickness and optical bandgap of the film was observed for films fabricated at high temperatures, which coincided with the increased crystallinity of the films. The average optical transmission of mixed thin films increased from 70% to 95% within the visible range (400–800 nm) as the substrate temperature increases. Optical bandgap of the films was determined to be in the range of 3.21–3.96 eV. The blue shift in the PL spectra from the films was supported by the fact that grain size of the mixed thin films is much smaller than that of the pure ZnO and SnO{sub 2} thin films. Due to the improved transmission and reduced grain size, the ZnO–SnO{sub 2} mixed thin films can have potential use in photovoltaic and gas sensing applications. - Highlights: • ZnO–SnO{sub 2} mixed thin films were deposited on glass substrate by spray pyrolysis. • Crystallinity of the thin films increases with substrate temperature. • Grain size of the mixed thin films is smaller than that of the pure thin films. • Reduction of grain size depends on mixed atomic ratios of precursor solution. • Optical band gap of films could be engineered by changing substrate temperature.

  7. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D. [School of Energy Studies, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, S. R., E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-13

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  8. The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors

    International Nuclear Information System (INIS)

    Souza, E.C.F.; Simoes, A.Z.; Cilense, M.; Longo, E.; Varela, J.A.

    2004-01-01

    Pure and Nb doped PbZr 0.4 Ti 0.6 O 3 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO 2 /Si (100) substrates and annealed at 700 deg. C. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr 0.39 Ti 0.6 Nb 0.1 O 3 showed good saturation, with values for coercive field (E c ) equal to 60 KV cm -1 and for remanent polarization (P r ) equal to 20 μC cm -2 . The measured dielectric constant (ε) is 1084 for this film. These results show good potential for application in FERAM

  9. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  10. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    International Nuclear Information System (INIS)

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  11. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    Energy Technology Data Exchange (ETDEWEB)

    W. M. Roach, D. B. Beringer, J. R. Skuza, W. A. Oliver, C. Clavero, C. E. Reece, R. A. Lukaszew

    2012-06-01

    Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic studies of Nb thin films deposited onto Cu surfaces to clarify possible reasons for the limited success that this process exhibited in previous attempts. We compare these films with Nb grown on other surfaces. In particular, we study the crystal structure and surface morphology and their effect on superconducting properties, such as critical temperature and lower critical field. We found that higher deposition temperature leads to a sharper critical temperature transition, but also to increased roughness indicating that there are competing mechanisms that must be considered for further optimization.

  12. Voltage transients in thin-film InSb Hall sensor

    Directory of Open Access Journals (Sweden)

    Alexey Bardin

    Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.

  13. Preparation of Pb(Zr, Ti)O3 Thin Films on Glass Substrates

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Hara, Yujiro; Suzuki, Kouji

    2000-09-01

    Lead-zirconate-titanate (PZT) thin films were prepared on non-alkaline glass substrates widely used in liquid crystal display (LCD) devices, by plasma-assisted magnetron RF sputtering with an immersed coil. After preparation of the PZT thin film, the glass was available for use in LCD device processing. No mutual diffusion of the elements was recognized between the glass substrate and the bottom electrode. The PZT layer had a dense film structure with rectangular and columnar grains, and only its perovskite phase was crystalline. PZT thin films on a glass substrate had leakage current densities of about 10-8 A/cm2, acceptable hysteresis loop shapes with the remanent polarization (Pr) of 45 μC/cm2 and the coercive field (Ec) of 90 kV/cm. Ferroelectric properties on a glass substrate almost conform with those on a Si-based substrate.

  14. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

    2005-12-22

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

  15. Effect of Etching on the Optical, Morphological Properties of Ag Thin Films for SERS Active Substrates

    Directory of Open Access Journals (Sweden)

    Desapogu Rajesh

    2013-01-01

    Full Text Available Structural, optical, and morphological properties of Ag thin films before and after etching were investigated by using X-ray diffraction, UV-Vis spectrophotometer, and field emission scanning electron microscopy (FESEM. The HNO3 roughened Ag thin films exhibit excellent enhancement features and better stability than pure Ag thin films. Further, the Ag nanostructures are covered with Rhodamine 6G (Rh6G and then tested with surface enhanced raman spectroscopy (SERS for active substrates. Etched Ag films were found to exhibit a strong SERS effect and excellent thermal stability. Hence, the present method is found to be useful in the development of plasmon-based analytical devices, especially SERS-based biosensors.

  16. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    International Nuclear Information System (INIS)

    Roach, W.M.; Beringer, D.B.; Skuza, J.R.; Oliver, W.A.; Clavero, C.; Reece, C.E.; Lukaszew, R.A.

    2012-01-01

    Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic studies of Nb thin films deposited onto Cu surfaces to clarify possible reasons for the limited success that this process exhibited in previous attempts. We compare these films with Nb grown on other surfaces. In particular, we study the crystal structure and surface morphology and their effect on superconducting properties, such as critical temperature and lower critical field. We found that higher deposition temperature leads to a sharper critical temperature transition, but also to increased roughness indicating that there are competing mechanisms that must be considered for further optimization.

  17. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    International Nuclear Information System (INIS)

    Seveno, R.; Braud, A.; Gundel, H.W.

    2005-01-01

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O 3 , PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO 3 ) by chemical solution deposition is studied. The SrRuO 3 thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO 3 layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 μC/cm were found

  18. Junctionless Thin-Film Transistors Gated by an H₃PO₄-Incorporated Chitosan Proton Conductor.

    Science.gov (United States)

    Liu, Huixuan; Xun, Damao

    2018-04-01

    We fabricated an H3PO4-incorporated chitosan proton conductor film that exhibited the electric double layer effect and showed a high specific capacitance of 4.42 μF/cm2. Transparent indium tin oxide thin-film transistors gated by H3PO4-incorporated chitosan films were fabricated by sputtering through a shadow mask. The operating voltage was as low as 1.2 V because of the high specific capacitance of the H3PO4-incorporated chitosan dielectrics. The junctionless transparent indium tin oxide thin film transistors exhibited good performance, including an estimated current on/off ratio and field-effect mobility of 1.2 × 106 and 6.63 cm2V-1s-1, respectively. These low-voltage thin-film electric-double-layer transistors gated by H3PO4-incorporated chitosan are promising for next generation battery-powered "see-through" portable sensors.

  19. A Humidity Sensor Based on Silver Nanoparticles Thin Film Prepared by Electrostatic Spray Deposition Process

    Directory of Open Access Journals (Sweden)

    Thutiyaporn Thiwawong

    2013-01-01

    Full Text Available In this work, thin film of silver nanoparticles for humidity sensor application was deposited by electrostatic spray deposition technique. The influence of the deposition times on properties of films was studied. The crystal structures of sample films, their surface morphology, and optical properties have been investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, and UV-VIS spectrophotometer, respectively. The crystalline structure of silver nanoparticles thin film was found in the orientation of (100 and (200 planes of cubic structure at diffraction angles 2θ  =  38.2° and 44.3°, respectively. Moreover, the silver nanoparticles thin films humidity sensor was fabricated onto the interdigitated electrodes. The sensor exhibited the humidity adsorption and desorption properties. The sensing mechanisms of the device were also elucidated by complex impedance analysis.

  20. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)