Europium and samarium doped calcium sulfide thin films grown by PLD

International Nuclear Information System (INIS)

Christoulakis, S.; Suchea, M; Katsarakis, N.; Koudoumas, E

2007-01-01

Europium and samarium doped calcium sulfide thin films (CaS:Eu,Sm) with different thickness were prepared by the pulsed laser deposition technique using sintered targets. A typical homemade deposition chamber and XeCl excimer laser (308 nm) were employed and the films were deposited in helium atmosphere onto silicon and corning glass substrates. Structural investigations carried out by X-ray diffraction and atomic force microscopy showed a strong influence of the deposition parameters on the film properties. The films grown had an amorphous or polycrystalline structure depending on growth temperature and the number of pulses used, the same parameters affecting the film roughness, the grain shape and dimensions, the film thickness and the optical transmittance. This work indicates that pulsed laser deposition can be a suitable technique for the preparation of CaS:Eu,Sm thin films, the film characteristics being controlled by the growth conditions

Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide

Directory of Open Access Journals (Sweden)

Shoichi Kawai

2014-03-01

Full Text Available Iron sulfide thin films were fabricated by the electrochemical deposition method from an aqueous solution containing FeSO4 and Na2S2O3. The composition ratio obtained was Fe:S:O = 36:56:8. In the photoelectrochemical measurement, a weak negative photo-current was observed for the iron sulfide films, which indicates that its conduction type is p-type. No peaks were observed in X-ray diffraction pattern, and thus the deposited films were considered to be amorphous. For a heterojunction with ZnO, rectification properties were confirmed in the current-voltage characteristics. Moreover, the current was clearly enhanced under AM1.5 illumination.

An in-situ chemical reaction deposition of nanosized wurtzite CdS thin films

International Nuclear Information System (INIS)

Chu Juan; Jin Zhengguo; Cai Shu; Yang Jingxia; Hong Zhanglian

2012-01-01

Nanocrystalline CdS thin films were deposited on glass substrates by an ammonia-free in-situ chemical reaction synthesis technique using cadmium cationic precursor solid films as reaction source and sodium sulfide based solutions as anionic reaction medium. Effects of ethanolamine addition to the cadmium cationic precursor solid films, deposition cycle numbers and annealing treatments in Ar atmosphere on structure, morphology, chemical composition and optical properties of the resultant films were investigated by X-ray diffraction, field emission scanning electron microscope, energy dispersive X-ray analysis and UV–Vis spectra measurements. The results show that CdS thin films deposited by the in-situ chemical reaction synthesis have wurtzite structure with (002) plane preferential orientation and crystallite size is in the range of 16 nm–19 nm. The growth of film thickness is almost constant with deposition cycle numbers and about 96 nm per cycle.

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

International Nuclear Information System (INIS)

Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

Radiation resistance of thin-film solar cells for space photovoltaic power

Science.gov (United States)

Woodyard, James R.; Landis, Geoffrey A.

1991-01-01

Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

Effect of ambient hydrogen sulfide on the physical properties of vacuum evaporated thin films of zinc sulfide

Energy Technology Data Exchange (ETDEWEB)

Singh, Beer Pal [Department of Physics, C.C.S. University, Meerut 250004 (India)], E-mail: drbeerpal@gmail.com; Singh, Virendra [Forensic Science Laboratory, Malviya Nagar, New Delhi 110017 (India); Tyagi, R.C.; Sharma, T.P. [Department of Physics, C.C.S. University, Meerut 250004 (India)

2008-02-15

Evaporated thin films of zinc sulfide (ZnS) have been deposited in a low ambient atmosphere of hydrogen sulfide (H{sub 2}S {approx}10{sup -4} Torr). The H{sub 2}S atmosphere was obtained by a controlled thermal decomposition of thiourea [CS(NH{sub 2}){sub 2}] inside the vacuum chamber. It has been observed that at elevated substrates temperature of about 200 deg. C helps eject any sulfur atoms deposited due to thermal decomposition of ZnS during evaporation. The zinc ions promptly recombine with H{sub 2}S to give better stoichiometry of the deposited films. Optical spectroscopy, X-ray diffraction patterns and scanning electron micrographs depict the better crystallites and uniformity of films deposited by this technique. These deposited films were found to be more adherent to the substrates and are pinhole free, which is a very vital factor in device fabrication.

The production of UV Absorber amorphous cerium sulfide thin film

Energy Technology Data Exchange (ETDEWEB)

Kariper, İshak Afşin, E-mail: akariper@gmail.com [Faculty of Education, Erciyes University, Kayseri (Turkey)

2017-10-15

This study investigates the production of cerium sulfide (CeSx) amorphous thin films on substrates (commercial glass) by chemical bath deposition at different pH levels. The transmittance, absorption, optical band gap and refractive index of the films are measured by UV/VIS Spectrum. According to XRD analysis, the films show amorphous structure in the baths with pH: 1 to 5. It has been observed that the optical and structural properties of the films depend on pH value of the bath. The optical band gap (2.08 eV to 3.16 eV) of the films changes with the film thickness (23 nm to 1144 nm). We show that the refractive index has a positive relationship with the film thickness, where the values of 1.93, 1.45, 1.42, 2.60 and 1.39 are obtained for the former, and 34, 560, 509, 23 and 1144 nm (at 550 nm wavelength) for the latter. We compare the optical properties of amorphous and crystal form of CeSx thin films. We show that the optical band gaps of the amorphous CeS{sub x} are lower than that of crystal CeS{sub x} . (author)

Sulfide precursor concentration and lead source effect on PbS thin films properties

Energy Technology Data Exchange (ETDEWEB)

Beddek, L.; Messaoudi, M.; Attaf, N. [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Aida, M.S., E-mail: aida_salah2@yahoo.fr [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Bougdira, J. [Université de Lorraine, Institut Jean Lamour UMR 7198, Vandoeuvre 54506 (France)

2016-05-05

Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

Sulfide precursor concentration and lead source effect on PbS thin films properties

International Nuclear Information System (INIS)

Beddek, L.; Messaoudi, M.; Attaf, N.; Aida, M.S.; Bougdira, J.

2016-01-01

Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

Indium sulfide thin films as window layer in chemically deposited solar cells

Energy Technology Data Exchange (ETDEWEB)

Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

2014-01-01

Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

Directory of Open Access Journals (Sweden)

Anuar Kassim

2010-12-01

Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

Preparation of cadmium-doped ZnO thin films by SILAR and their ...

Indian Academy of Sciences (India)

Cadmium-doped zinc oxide (Cd : ZnO) thin films were deposited from sodium zincate bath .... of complex ion on the substrate followed by reaction of the .... Intensity (a.u.). 0. 500 .... trum confirmed the presence of Zn, O and Cd elements in the.

Structural and optical properties of tin (II) sulfide thin films deposited using organophosphorus precursor (Ph3PS)

Science.gov (United States)

Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

2017-02-01

Tin sulfide (SnS) thin films have been deposited onto glass substrates using triphenylphosphine sulfide (Ph3PS) as a sulfur precursor in a chemical vapor deposition reactor in a temperature range of 250 °C-400 °C. The influence of the sulphidisation temperature in the crystal structure, surface morphology, chemical composition and optical properties has been investigated. X-ray diffraction, energy dispersive analysis of x-rays, and Raman spectroscopy showed that pure SnS thin films have been successfully obtained at 250 °C. All the deposited films were polycrystalline and showed orthorhombic structure, with a preferential orientation according to the direction . The optical measurements showed that the films deposited exhibited a direct allowed transition and have a relatively high absorption coefficient. The presence of mixed tin sulfide phases granted by the variation of the sulphidisation temperature has affected the optical properties of the deposited films. The refractive index (n) and extinction coefficient (k), has low values compared to conventional semiconductor materials. The grown films can be considered as a good light absorbing material and a promising candidate for application in optoelectronic devices.

Swift heavy ion induced modifications in optical and electrical properties of cadmium selenide thin films

Science.gov (United States)

Choudhary, Ritika; Chauhan, Rishi Pal

2017-07-01

The modification in various properties of thin films using high energetic ion beam is an exciting area of basic and applied research in semiconductors. In the present investigations, cadmium selenide (CdSe) thin films were deposited on ITO substrate using electrodeposition technique. To study the swift heavy ion (SHI) induced effects, the deposited thin films were irradiated with 120 MeV heavy Ag9+ ions using pelletron accelerator facility at IUAC, New Delhi, India. Structural phase transformation in CdSe thin film from metastable cubic phase to stable hexagonal phase was observed after irradiation leading to decrease in the band gap from 2.47 eV to 2.12 eV. The phase transformation was analyzed through X-ray diffraction patterns. During SHI irradiation, Generation of high temperature and pressure by thermal spike along the trajectory of incident ions in the thin films might be responsible for modification in the properties of thin films.[Figure not available: see fulltext.

Cathodoluminescence and ion implantation of cadmium sulphide/cuprous sulphide solar cells

Energy Technology Data Exchange (ETDEWEB)

Glew, R W; Bryant, F J

1975-10-01

By the use of implantation with copper ions or oxygen ions of 50 keV energy, changes in the cathodoluminescence emission spectrum from cadmium sulfide/cuprous sulfide thin film manufactured solar cells have been correlated with changes in the phases of the cuprous sulfide layer. Thus, monitoring the relative intensities of cathodoluminescence emission bands affords a method of assessing the cuprous sulfide layer and possibly predicting the performance of the cells.

Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications

International Nuclear Information System (INIS)

Shao Lexi; Chang, K.-H.; Hwang, H.-L.

2003-01-01

Zinc sulfide (ZnS) thin films with nano-scale grains of about 50 nm were deposited on glass substrates at a substrate temperature of 200 deg. C via RF reactive sputtering by using zinc plate target and hydrogen sulfide gas. The structure, compositions, electrical and optical characteristics of the deposited films were investigated for the photovoltaic device applications. All films showed a near stoichiometric composition as indicated in their AES data. Distinct single crystalline phase with preferential orientation along the (0 0 0 1) plane of wurtzite or the (1 1 1) plane of zinc blende (ZB) was revealed in their X-ray diffraction (XRD) patterns, and the spacing of the planes are well matched to those of (1 1 2) plane of the chalcopyrite CuInS 2 (CIS). UV-Vis measurement showed that the films had more than 65% transmittance in the wavelength larger than 350 nm, and the fundamental absorption edge shifted to shorter wavelength with the increase of sulfur incorporated in the films, which corresponds to an increase in the energy band gap ranging from 3.59 to 3.72 eV. It was found that ZnS films are suitable for use as the buffer layer of the CIS solar cells, and it is the viable alternative for replacing CdS in the photovoltaic cell structure

Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Bai, Rekha, E-mail: rekha.mittal07@gmail.com; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi-110016 (India)

2016-05-06

Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

International Nuclear Information System (INIS)

Bai, Rekha; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

2016-01-01

Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

Effects of bacteria on CdS thin films used in technological devices

Science.gov (United States)

Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

2017-04-01

Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

Synthesis of zinc sulfide by chemical vapor deposition using an organometallic precursor: Di-tertiary-butyl-disulfide

International Nuclear Information System (INIS)

Vasekar, Parag; Dhakal, Tara; Ganta, Lakshmikanth; Vanhart, Daniel; Desu, Seshu

2012-01-01

Zinc sulfide has gained popularity in the last few years as a cadmium-free heterojunction partner for thin film solar cells and is seen as a good replacement for cadmium sulfide due to better blue photon response and non-toxicity. In this work, zinc sulfide films are prepared using an organic sulfur source. We report a simple and repeatable process for development of zinc sulfide using a cost-effective and less hazardous organic sulfur source. The development of zinc sulfide has been studied on zinc oxide-coated glass where the zinc oxide is converted into zinc sulfide. Zinc oxide grown by atomic layer deposition as well as commercially available zinc oxide-coated glass was used. The zinc sulfide synthesis has been studied and the films are characterized using scanning electron microscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and a UV–VIS spectrophotometer. XRD, XPS and optical characterization confirm the zinc sulfide phase formation. - Highlights: ► Synthesis of ZnS using a less-hazardous precursor, di-tertiary-butyl-disulfide. ► ZnS process optimized for two types of ZnO films. ► Preliminary results for a solar cell show an efficiency of 1.09%.

Preparation and study of the properties of indium phosphide thin films impregnated with cadmium and zinc

International Nuclear Information System (INIS)

Moutinho, H.R.

1984-01-01

Indium phosphide thin films were deposited by vacuum evaporation of indium and phosphorous, using the three-temperature method. The effects of the introduction of cadmium and zinc, group II impurities, on the properties of these films were studied. The introduction of cadmium was achieved by coevaporation of this element during the film deposition. The introduction of zinc was done by diffusion of this element in intrinsic films. Analyses of these films were carried out by the study of the composition, morphology, structure, optical properties and electrical properties. The introduction of cadmium led to the reduction of grain size and increase in the bandgap and in certain cases, even change in morphology. Phases of CdP2 and β-CdP2 were detected and the resistivity increased by some orders of magnitude. The introduction of zinc did not change the morphology, crystalline structure and bandgap. However, a new energy level corresponding to the zinc acceptor level was found and the resistivity increased by some orders of magnitude. (Author) [pt

Structural, electrical and optical studies of SILAR deposited cadmium oxide thin films: Annealing effect

International Nuclear Information System (INIS)

Salunkhe, R.R.; Dhawale, D.S.; Gujar, T.P.; Lokhande, C.D.

2009-01-01

Successive ionic layer adsorption and reaction (SILAR) method has been successfully employed for the deposition of cadmium oxide (CdO) thin films. The films were annealed at 623 K for 2 h in an air and changes in the structural, electrical and optical properties were studied. From the X-ray diffraction patterns, it was found that after annealing, H 2 O vapors from as-deposited Cd(O 2 ) 0.88 (OH) 0.24 were removed and pure cubic cadmium oxide was obtained. The as-deposited film consists of nanocrystalline grains of average diameter about 20-30 nm with uniform coverage of the substrate surface, whereas for the annealed film randomly oriented morphology with slight increase in the crystallite size has been observed. The electrical resistivity showed the semiconducting nature with room temperature electrical resistivity decreased from 10 -2 to 10 -3 Ω cm after annealing. The decrease in the band gap energy from 3.3 to 2.7 eV was observed after the annealing

Thin-Film Material Science and Processing | Materials Science | NREL

Science.gov (United States)

Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency.

Science.gov (United States)

Wen, Xixing; Chen, Chao; Lu, Shuaicheng; Li, Kanghua; Kondrotas, Rokas; Zhao, Yang; Chen, Wenhao; Gao, Liang; Wang, Chong; Zhang, Jun; Niu, Guangda; Tang, Jiang

2018-06-05

Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

Thin-film solar cells

International Nuclear Information System (INIS)

Aberle, Armin G.

2009-01-01

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

FABRICATION OF ZNS THIN FILM FOR INORGANIC EL BY THE VACCUUM EVAPORATION

OpenAIRE

龍見, 雅美; 島谷, 圭市; 小西, 信行; 元木, 健作

2008-01-01

"Zinc sulfide is a typical material for inorganic electroluminescent(EL) device. Recently very high luminance and life time e has been reported on an inorganic EL device based on thin film zinc sulfide material. The present study tries to realize high quality zinc sulfide thin film for EL device. The thin film was grown by the vacuum evaporation method. In order to obtain stoichiometric thin film, the vacuum evaporation was carried out in a quasi-closed vessel under a condition of sulfur atmo...

Synthesis of cadmium tungstate films via sol-gel processing

Energy Technology Data Exchange (ETDEWEB)

Lennstrom, Kirk; Limmer, Steven J.; Cao Guozhong

2003-06-23

Cadmium tungstate is a scintillator material with excellent intrinsic photoluminescent properties. It is highly resistant to gamma radiation, has an almost non-existent afterglow and is highly efficient. Cadmium tungstate is also non-hydroscopic, unlike the more prevalent thallium-doped alkali halide scintillators. In order to create thin films of cadmium tungstate with precise stoichiometric control, a sol-gel processing technique has been applied to produce this material for the first time. In addition to lower processing temperatures, sol-gel-derived cadmium tungstate is cheaper and easier than other technologies, particularly for thin films. Furthermore, it has the potential to produce nanostructured materials with good optical quality. X-Ray diffraction results of sol-gel-derived materials fired at various temperatures imply crystallization of cadmium tungstate without the intermediate formation of either tungsten oxide or cadmium oxide. Scanning electron microscopy analysis shows the formation of nano-sized particles prior to heat treatment, which form meso-sized particles after the heat treatment. Photoluminesce analysis indicates emission of derived films at 480 nm, which agrees with other published data. Finally, the efficiency of derived films was approximately 6%{+-}1.8%.

Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

Directory of Open Access Journals (Sweden)

Imyhamy M. Dharmadasa

2017-01-01

Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

KAUST Repository

Salas-Villasenor, A. L.; Mejia, I.; Hovarth, J.; Alshareef, Husam N.; Cha, D. K.; Ramirez-Bon, R.; Gnade, B. E.; Quevedo-Lopez, M. A.

2010-01-01

Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

KAUST Repository

Salas-Villasenor, A. L.

2010-06-29

Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

A study of the optical properties and adhesion of zinc sulfide anti-reflection thin film coated on a germanium substrate

Energy Technology Data Exchange (ETDEWEB)

Firoozifar, S.A.R. [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of); Behjat, A., E-mail: abehjat@yazduni.ac.ir [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of); Photonics Research Group, Engineering Research Center, Yazd University, Yazd (Iran, Islamic Republic of); Kadivar, E. [Physics Department, Persian Gulf University, Bushehr (Iran, Islamic Republic of); Ghorashi, S.M.B.; Zarandi, M. Borhani [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of)

2011-11-01

To conduct this study, zinc sulfide (ZnS) thin films deposited on germanium (Ge) substrates were prepared by an evaporation method. The effects of deposition rate and annealing on the optical properties and adhesion of the ZnS thin films were investigated. The transmission intensity and the X-ray diffraction (XRD) pattern of the samples showed that the transmittance of the samples decreases by increasing the evaporation rates. However, with the increase of the annealing temperature, crystallinity of the thin films improves which, in turn, results in the enhancement of the transmission intensity in a far infrared region. The maximum grain size was obtained at the annealing temperature of 225 deg. C. Our experimental results also show that evaporation rate and annealing influences the adhesion of ZnS thin films to Ge substrates.

Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

Directory of Open Access Journals (Sweden)

Nor A. Abdul-Manaf

2015-09-01

Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Structural, Optical, and Morphological Properties of the Cadmium Oxide Thin Film Taif S. Almaadhede

Directory of Open Access Journals (Sweden)

Taif S. Almaadhede

2018-04-01

Full Text Available Cadmium oxide nanoparticles CdO NPS has been prepared by laser ablation in ethanol at 600 pulses and 600 mJ as laser energy. The structural, optical, and morphological properties of the cadmium oxide CdO thin film deposited on a glass substrate have been studied. X-ray diffrac-tometer (XRD 6000, Shimadzu, X-ray, diffractometer with Cukα radiation at a wavelength of ( = 0.154056 nm was utilized to investigate the structural properties of CdO NPs. The optical absorption of colloidal CdO NPs was measured using a spectrophotometer (Cary, 100 cans plus, UV-Vis-NIR, Split Beam Optics, Dual detectors in the range of (200–900 nm. The morpholo-gy of the CdO NPs was investigated by using AFM (AA 3000 Scanning Probe Microscope. The thickness of the films was measured using ellipsometer (Angstrom sun Technologies Ins.

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

International Nuclear Information System (INIS)

Pena, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vazquez, A.; Gomez, I.; Elizondo, P.

2011-01-01

In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2 S 3 ) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Characterization of nanocrystalline cadmium telluride thin films ...

Indian Academy of Sciences (India)

Unknown

tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

Optical and structural characteristics of lead sulfides thin films

International Nuclear Information System (INIS)

Karim Deraman; Bakar Ismail; Samsudi Sakrani; Gould, R.D.

1992-01-01

Tin sulfide films have been prepared by evaporation technique at 1x10 - 4 torr and at substrate temperatures between 100 to 300 0 C. The films thickness were 52 to 370 nm. From the absorption 1.47 eV and X-ray diffraction patent shows that the composition of films have changed from SnS 2 (at low temperature) to SnS (at higher temperature)

Reduction kinetics of zinc and cadmium sulfides with hydrogen

International Nuclear Information System (INIS)

Turgenev, I.S.; Kabisov, I.Kh.; Zviadadze, G.N.; Vasil'eva, O.Yu.

1985-01-01

Kinetics of reduction processes of zinc sulfide in the temperature range 800-1100 deg C and of cadmium sulfide 600-900 deg C has been stodied. Activation energies and reaction order in terms of hydrogen are calculated. Thermodynamic processes of reduction depend on aggregate state of the metal formed. For vaporous zinc in the temperature range 1050-950 deq C activation energy constitutes 174 kJ/mol, for liquid in the range 900-850 deg - 151 kJ/mol and reaction order in terms of hydrogen is 1.0. For vaporous cadmium in the temperature range 900-700 deg C activation energy constitutes 144 kJ/mol and reaction order in terms of hydrogen is 0.86, for liquid in the range 675-600 deg C 127 kJ/mol and 0.8 respectively. The processes of zinc and cadmium sulfide reduction proceed in kinetic regime and are limited by the rate of chemical reaction

Cadmium-manganese oxide composite thin films: Synthesis, characterization and photoelectrochemical properties

Energy Technology Data Exchange (ETDEWEB)

Mansoor, M.A. [Department of Chemistry, Faculty of Science, University of Malaya, Kuala Lumpur 50603 (Malaysia); Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Faculty of Science, Kuala Lumpur 50603 (Malaysia); Ebadi, M. [Solar Energy Research Institute, University Kebangsaan Malaysia, Bangi 43600, Selangor (Malaysia); Mazhar, M., E-mail: mazhar42pk@yahoo.com [Department of Chemistry, Faculty of Science, University of Malaya, Kuala Lumpur 50603 (Malaysia); Huang, N.M. [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Faculty of Science, Kuala Lumpur 50603 (Malaysia); Mun, L.K.; Misran, M. [Department of Chemistry, Faculty of Science, University of Malaya, Kuala Lumpur 50603 (Malaysia); Basirun, W.J. [Department of Chemistry, Faculty of Science, University of Malaya, Kuala Lumpur 50603 (Malaysia); Institute of Nanotechnology and Catalysis (NanoCat), University Malaya, Kuala Lumpur 50603 (Malaysia)

2017-01-15

Ceramic composite CdO–Mn{sub 2}O{sub 3} thin films have been deposited on fluorine doped tin oxide (FTO) coated glass substrates by aerosol assisted chemical vapour deposition (AACVD) using a 1:1 mixture of cadmium complex, [Cd(dmae){sub 2}(OAc){sub 2}]·H{sub 2}O (1) (where dmae = 2-dimethylaminoethanolato and OAc = acetato), and diacetatomanganese (II). The phase purity, stoichiometry and thickness of the films were examined by X-ray diffraction (XRD), Fourier transformed infra-red (FTIR), Raman spectroscopy, field emission gun scanning electron microscopy (FEG-SEM), energy dispersive X-ray spectroscopy (EDX), UV–Vis spectroscopy and profilometer. The FEG-SEM analysis illustrated that the morphology of the fabricated films was influenced by the type of solvent. The optical direct band gap of the film fabricated from THF solution was 1.95 eV. From the current–voltage characteristics it is evident that the CdO–Mn{sub 2}O{sub 3} composite semiconductor electrode exhibits n-type behaviour and the photocurrent density was found to be dependent on the deposition medium. The film deposited from THF solution displayed maximum photocurrent density of 4.80 mA cm{sup −2} at 0.65 V vs. Ag/AgCl/3 M KCl (∼1.23 V vs. RHE) in 0.5 M NaOH electrolyte. - Highlights: • Single crystal X-ray structure of [Cd(dmae){sub 2}(OAc){sub 2}]·H{sub 2}O (1). • CdO-Mn{sub 2}O{sub 3} composite photoanode thin films. • Optical band gap of CdO-Mn{sub 2}O{sub 3} photoanode. • Photoelectrochemical and EIS studies.

Electrochemical deposition of molybdenum sulfide thin films on conductive plastic substrates as platinum-free flexible counter electrodes for dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Cheng, Chao-Kuang; Hsieh, Chien-Kuo, E-mail: jack_hsieh@mail.mcut.edu.tw

2015-06-01

In this study, pulsed electrochemical deposition (pulsed ECD) was used to deposit molybdenum sulfide (MoS{sub x}) thin films on indium tin oxide/polyethylene naphthalate (ITO/PEN) substrates as flexible counter electrodes (CEs) for dye-sensitized solar cells (DSSCs). The surface morphologies and elemental distributions of the prepared MoS{sub x} thin films were examined using field-emission scanning electron microscope (FE-SEM) equipped with energy-dispersive X-ray spectroscopy. The chemical states and crystallinities of the prepared MoS{sub x} thin films were examined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The optical transmission (T (%)) properties of the prepared MoS{sub x} samples were determined by ultraviolet–visible spectrophotometry. Cyclic voltammetry (CV) and Tafel-polarization measurements were performed to analyze the electrochemical properties and catalytic activities of the thin films for redox reactions. The FE-SEM results showed that the MoS{sub x} thin films were deposited uniformly on the ITO/PEN flexible substrates via the pulsed ECD method. The CV and Tafel-polarization curve measurements demonstrated that the deposited MoS{sub x} thin films exhibited excellent performances for the reduction of triiodide ions. The photoelectric conversion efficiency (PCE) of the DSSC produced with the pulsed ECD MoS{sub x} thin-film CE was examined by a solar simulator. In combination with a dye-sensitized TiO{sub 2} working electrode and an iodine-based electrolyte, the DSSC with the MoS{sub x} flexible CE showed a PCE of 4.39% under an illumination of AM 1.5 (100 mW cm{sup −2}). Thus, we report that the MoS{sub x} thin films are active catalysts for triiodide reduction. The MoS{sub x} thin films are prepared at room temperature and atmospheric pressure and in a simple and rapid manner. This is an important practical contribution to the production of flexible low-cost thin-film CEs based on plastic substrates. The MoS{sub x

CuInS{sub 2} thin films obtained through the annealing of chemically deposited In{sub 2}S{sub 3}-CuS thin films

Energy Technology Data Exchange (ETDEWEB)

Pena, Y., E-mail: yolapm@gmail.com [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Lugo, S. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Calixto-Rodriguez, M. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco S/N, Col Centro, 62580, Temixco, Morelos (Mexico); Vazquez, A.; Gomez, I.; Elizondo, P. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba S/N, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico)

2011-01-01

In this work, we report the formation of CuInS{sub 2} thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In{sub 2}S{sub 3}) at 300 and 350 deg. C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS{sub 2} (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 x 10{sup -8} to 3 {Omega}{sup -1} cm{sup -1} depending on the thickness of the CuS film. CIS films showed p-type conductivity.

Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

International Nuclear Information System (INIS)

Nazir, Adnan; Toma, Andrea; Shah, Nazar Abbas; Panaro, Simone; Butt, Sajid; Sagar, Rizwan ur Rehman; Raja, Waseem; Rasool, Kamran; Maqsood, Asghari

2014-01-01

Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10 6 Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10 3 Ω cm) against a 20% cut in optical transmission

Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

Science.gov (United States)

Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

2017-01-01

A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

A comparative study of CdS thin films deposited by different techniques

Energy Technology Data Exchange (ETDEWEB)

Pérez-Hernández, G., E-mail: german.perez@ujat.mx [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Pantoja-Enríquez, J. [Centro de Investigación y Desarrollo Tecnológico en Energías Renovables, UNICACH, Libramiento Norte No 1150, Tuxtla Gutiérrez, Chiapas 29039 (Mexico); Escobar-Morales, B. [Instituto Tecnológico de Cancún, Avenida Kábah Km 3, Cancún, Quintana Roo 77500 (Mexico); Martinez-Hernández, D.; Díaz-Flores, L.L.; Ricardez-Jiménez, C. [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Mathews, N.R.; Mathew, X. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

2013-05-01

Cadmium sulfide thin-films were deposited on glass slides and SnO{sub 2}:F coated glass substrates by chemical bath deposition, sputtering and close-spaced sublimation techniques. The films were studied for the structural and opto-electronic properties after annealing in an ambient identical to that employed in the fabrication of CdTe/CdS devices. Quantum efficiency of the CdTe/CdS solar cells fabricated with CdS buffer films prepared by the three methods were investigated to understand the role of CdS film preparation method on the blue response of the devices. The higher blue response observed for the devices fabricated with chemical bath deposited CdS film is discussed. - Highlights: ► CdS films were prepared by different techniques. ► Role of CdS on the blue response of device was studied. ► Structural and optical properties of CdS were analyzed. ► Chemically deposited CdS has high blue transmittance. ► CdS deposition method influences diffusion of S and Te.

Optoelectronic properties of R-F magnetron sputtered Cadmium Tin Oxide (Cd2SnO4) thin films for CdS/CdTe thin film solar cell applications

International Nuclear Information System (INIS)

Jeyadheepan, K.; Thamilselvan, M.; Kim, Kyunghae; Yi, Junsin; Sanjeeviraja, C.

2015-01-01

Highlights: • Characterization of “as-prepared” Cd 2 SnO 4 thin films ideal for thin film solar cells. • Lowest value of resistivity with high mobility attained for the as-prepared Cd 2 SnO 4 films. • Maximum transmittance of 93% in the visible range for the as-prepared films. • Effect of substrate temperature on the scattering mechanism of TCO. - Abstract: The influence of substrate temperature on the microstructural behavior, optical, electrical properties and on the scattering mechanism of charge carriers were studied for the as-prepared radio-frequency (R-F) magnetron sputtered Cadmium Tin Oxide (Cd 2 SnO 4 ) thin films. Films prepared at the substrate temperature of 300 °C were found to be polycrystalline in nature with preferential orientation along (3 1 1) plane. Well pronounced Moss–Burstein shift, in the transmittance spectra with dispersions in the optical band gap from 3.07 to 3.30 eV, was observed at substrate temperatures between 25 and 300 °C. Optical property of high visible transmittance was retained by the films. Analysis of the electrical properties on the prepared crystalline Cd 2 SnO 4 films showed a calculated resistivity of 10 −3 –10 −4 Ω cm, with n-type carrier density in the range of 10 19 –10 20 cm −3 and the charge carrier mobility in the range of 63–30 cm 2 /V s. The effects of structural, compositional and optical properties on the scattering mechanism of charge carrier are elaborated and reported to be an experimental evidence for the theoretical predictions. The results revealed the essential DC electrical conduction behavior, which is ideal for the fabrication of Cd 2 SnO 4 -based CdS/CdTe thin film solar cells

Copper zinc tin sulfide-based thin film solar cells

CERN Document Server

Ito, Kentaro

2014-01-01

Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

Structural, optical and electrical properties of copper antimony sulfide thin films grown by a citrate-assisted single chemical bath deposition

Science.gov (United States)

Loranca-Ramos, F. E.; Diliegros-Godines, C. J.; Silva González, R.; Pal, Mou

2018-01-01

Copper antimony sulfide (CAS) has been proposed as low toxicity and earth abundant absorber materials for thin film photovoltaics due to their suitable optical band gap, high absorption coefficient and p-type electrical conductivity. The present work reports the formation of copper antimony sulfide by chemical bath deposition using sodium citrate as a complexing agent. We show that by tuning the annealing condition, one can obtain either chalcostibite or tetrahedrite phase. However, the main challenge was co-deposition of copper and antimony as ternary sulfides from a single chemical bath due to the distinct chemical behavior of these metals. The as-deposited films were subjected to several trials of thermal treatment using different temperatures and time to find the optimized annealing condition. The films were characterized by different techniques including Raman spectroscopy, X-ray diffraction (XRD), profilometer, scanning electron microscopy (SEM), UV-vis spectrophotometer, and Hall Effect measurements. The results show that the formation of chalcostibite and tetrahedrite phases is highly sensitive to annealing conditions. The electrical properties obtained for the chalcostibite films varied as the annealing temperature increases from 280 to 350 °C: hole concentration (n) = 1017-1018 cm-3, resistivity (ρ) = 1.74-2.14 Ωcm and carrier mobility (μ) = 4.7-9.26 cm2/Vseg. While for the tetrahedrite films, the electrical properties were n = 5 × 1019 cm-3, μ = 18.24 cm2/Vseg, and ρ = 5.8 × 10-3 Ωcm. A possible mechanism for the formation of ternary copper antimony sulfide has also been proposed.

Effect of annealing on the electrical, optical and structural properties of cadmium stannate thin films prepared by spray pyrolysis technique

International Nuclear Information System (INIS)

Kumaravel, R.; Krishnakumar, V.; Gokulakrishnan, V.; Ramamurthi, K.; Jeganathan, K.

2010-01-01

Polycrystalline thin films of cadmium stannate (Cd 2 SnO 4 ) were deposited by spray pyrolysis method on the Corning substrates at substrate temperature of 525 o C. Further, the films were annealed at 600 o C in vacuum for 30 min. These films were characterized for their structural, electrical and optical properties. The experimental results showed that the post-deposition annealing in vacuum has a significant influence on the properties of the films. The average grain size of the film was increased from 27.3 to 35.0 nm on heat treatment. The average optical transmittance in the visible region (500-850 nm) is decreased from 81.4% to 73.4% after annealing in vacuum. The minimum resistivity achieved in the present study for the vacuum annealed films is the lowest among the reported values for the Cd 2 SnO 4 thin films prepared by spray pyrolysis method.

Red coloration by heat treatment of the coprecipitate of cadmium sulfide and mercury(II) sulfide prepared from the nitrates

International Nuclear Information System (INIS)

Nakahara, Fujiya

1979-01-01

The effects of starting salts on the color, particle size and crystal structure of mercury-cadmium-sulfide pigments were investigated. The coprecipitate (N-S) of cadmium sulfide and mercury (II) sulfide was prepared by adding sodium sulfide solution to a mixed cadmium-mercury (II) nitrate solution. The coprecipitate (C-S) of cadmium sulfide and mercury (II) sulfide was also prepared from the mixed solution of their chlorides by the same method as described above. The coprecipitated products were heat-treated (calcination or hydrothermal treatment) at 350 0 C for 2 hours and subsequent changes in powder properties of both products were compared from each other. The powder properties of N-S, C-S and their heat-treated products were investigated by spectral reflectance, electron microscopy, X-ray diffraction and specific surface area measurements. Sample (N-C) obtained by the calcination of N-S was brown, indicating no red coloration, but the calcined product (C-C) of C-S developed a red color. Cl - and hot water were found to be effective for the red color development of the pigment. The effectiveness was confirmed by calcining N-S in the presence of NaCl or by treating it hydrothermally. It was found that halides other than NaCl, (e.g., NH 4 Cl, KCl, KBr and KI), were also effective for the color development of the pigment. The red samples are solid solutions with a basically hexagonal CdS structure, and it appears that CdS takes up HgS without any apparent structural changes. The particle size of the red samples are larger than those of the non red samples. (author)

Effects of oxygen partial pressure, deposition temperature, and annealing on the optical response of CdS:O thin films as studied by spectroscopic ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Junda, Maxwell M.; Grice, Corey R.; Subedi, Indra; Yan, Yanfa; Podraza, Nikolas J. [Department of Physics & Astronomy and The Wright Center for Photovoltaics Innovation & Commercialization, University of Toledo, Toledo, Ohio 43606 (United States)

2016-07-07

Ex-situ spectroscopic ellipsometry measurements are made on radio frequency magnetron sputtered oxygenated cadmium sulfide (CdS:O) thin films. Films are deposited onto glass substrates at room temperature and at 270 °C with varying oxygen to total gas flow ratios in the sputtering ambient. Ellipsometric spectra from 0.74 to 5.89 eV are collected before and after annealing at 607 °C to simulate the thermal processes during close-space sublimation of overlying cadmium telluride in that solar cell configuration. Complex dielectric function (ε = ε{sub 1} + iε{sub 2}) spectra are extracted for films as a function of oxygen gas flow ratio, deposition temperature, and post-deposition annealing using a parametric model accounting for critical point transitions and an Urbach tail for sub-band gap absorption. The results suggest an inverse relationship between degree of crystallinity and oxygen gas flow ratio, whereas annealing is shown to increase crystallinity in all samples. Direct band gap energies are determined from the parametric modeling of ε and linear extrapolations of the square of the absorption coefficient. As-deposited samples feature a range of band gap energies whereas annealing is shown to result in gap energies ranging only from 2.40 to 2.45 eV, which is close to typical band gaps for pure cadmium sulfide.

Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

Science.gov (United States)

Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

2015-10-14

Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

Nanocrystalline CdTe thin films by electrochemical synthesis

Directory of Open Access Journals (Sweden)

Ramesh S. Kapadnis

2013-03-01

Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

The effect of annealing on structural, optical and photosensitive properties of electrodeposited cadmium selenide thin films

Directory of Open Access Journals (Sweden)

Somnath Mahato

2017-06-01

Full Text Available Cadmium selenide (CdSe thin films have been deposited on indium tin oxide coated glass substrate by simple electrodeposition method. X-ray Diffraction (XRD studies identify that the as-deposited CdSe films are highly oriented to [002] direction and they belong to nanocrystalline hexagonal phase. The films are changed to polycrystalline structure after annealing in air for temperatures up to 450 °C and begin to degrade afterwards with the occurrence of oxidation and porosity. CdSe completely ceases to exist at higher annealing temperatures. CdSe films exhibit a maximum absorbance in the violet to blue-green region of an optical spectrum. The absorbance increases while the band gap decreases with increasing annealing temperature. Surface morphology also shows that the increase of the annealing temperature caused the grain growth. In addition, a number of distinct crystals is formed on top of the film surface. Electrical characteristics show that the films are photosensitive with a maximum sensitivity at 350 °C.

Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling

Energy Technology Data Exchange (ETDEWEB)

Simon, F.-G., E-mail: franz-georg.simon@bam.de [BAM Federal Institute for Materials Research and Testing, Division 4.3 Contaminant Transfer and Environmental Technologies, Unter den Eichen 87, 12205 Berlin (Germany); Holm, O.; Berger, W. [BAM Federal Institute for Materials Research and Testing, Division 4.3 Contaminant Transfer and Environmental Technologies, Unter den Eichen 87, 12205 Berlin (Germany)

2013-04-15

Highlights: ► The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ► The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ► PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources.

Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling

International Nuclear Information System (INIS)

Simon, F.-G.; Holm, O.; Berger, W.

2013-01-01

Highlights: ► The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ► The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ► PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources

Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

KAUST Repository

Mejia, Israel I.; Salas Villaseñ or, Ana L.; Cha, Dong Kyu; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

2013-01-01

We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

Solution precursor plasma deposition of nanostructured CdS thin films

International Nuclear Information System (INIS)

Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

2012-01-01

Highlights: ► Inexpensive process with capability to produce large scale nanostructured coatings. ► Technique can be employed to spray the coatings on any kind of substrates including polymers. ► The CdS coatings developed have good electrical conductivity and optical properties. ► Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal α-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be ∼2.5 eV. The electrical resistivity of the films (0.243 ± 0.188 × 10 5 Ω cm) was comparable with the literature values. These nanostructured polycrystalline CdS films could be useful in sensing and solar applications.

Solution precursor plasma deposition of nanostructured CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

Influence of pH of spray solution on optoelectronic properties of cadmium oxide thin films

International Nuclear Information System (INIS)

Hodlur, R. M.; Rabinal, M. K.

2015-01-01

Highly conducting transparent cadmium oxide thin films were prepared by the conventional spray pyrolysis technique. The pH of the spray solution is varied by adding ammonia/hydrochloric acid. The effect of pH on the morphology, crystallinity and optoelectronic properties of these films is studied. The structural analysis showed all the films in the cubic phase. For the films with pH < 7 (acidic condition), the preferred orientation is along the (111) direction and for those with pH >7 (alkaline condition), the preferred orientation is along the (200) direction. A lowest resistivity of 9.9 × 10 −4 Ω·cm (with carrier concentration = 5.1 × 10 20 cm −3 , mobility = 12.4 cm 2 /(V·s)) is observed for pH ≈ 12. The resistivity is tuned almost by three orders of magnitude by controlling the bath pH with optical transmittance more than 70%. Thus, the electrical conductivity of CdO films could be easily tuned by simply varying the pH of the spray solution without compromising the optical transparency. (paper)

Optimization of deposition conditions of CdS thin films using response surface methodology

Energy Technology Data Exchange (ETDEWEB)

Yücel, Ersin, E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Güler, Nuray [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Yücel, Yasin [Department of Chemistry, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

2014-03-15

Highlights: • Statistical methods used for optimization of CdS deposition parameters. • The morphology of the films was smooth, homogeneous and continuous. • Optimal conditions found as pH 11, stirring speed:361 rpm and deposition time: 55 min. • CdS thin film band gap value was 2.72 eV under the optimum conditions. -- Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by chemical bath deposition (CBD) technique under different pH, stirring speed and deposition time. Response Surface Methodology (RSM) and Central Composite Design (CCD) were used to optimization of deposition parameters of the CdS thin films. RSM and CCD were also used to understand the significance and interaction of the factors affecting the film quality. Variables were determined as pH, stirring speed and deposition time. The band gap was chosen as response in the study. Influences of the variables on the band gap and the film quality were investigated. 5-level-3-factor central composite design was employed to evaluate the effects of the deposition conditions parameters such as pH (10.2–11.8), stirring speed (132–468 rpm) and deposition time (33–67 min) on the band gap of the films. The samples were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and ultraviolet–visible spectroscopy (UV–vis) measurements. The optimal conditions for the deposition parameters of the CdS thin films have been found to be: pH 11, 361 of stirring speed and 55 min of deposition time. Under the optimal conditions theoretical (predicted) band gap of CdS (2.66 eV) was calculated using optimal coded values from the model and the theoretical value is good agreement with the value (2.72 eV) obtained by verification experiment.

Growth analysis of cadmium sulfide thin films by atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Moutinho, H.R.; Dhere, R.G.; Ramanathan, K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

CdS films have been deposited by solution growth on SnO{sub 2} and glass substrates. Nucleation on SnO{sub 2} occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO{sub 2} depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.

Inhibition of sulfate reduction by iron, cadmium and sulfide in granular sludge

International Nuclear Information System (INIS)

Gonzalez-Silva, Blanca M.; Briones-Gallardo, Roberto; Razo-Flores, Elias; Celis, Lourdes B.

2009-01-01

This study investigated the inhibition effect of iron, cadmium and sulfide on the substrate utilization rate of sulfate reducing granular sludge. A series of batch experiments in a UASB reactor were conducted with different concentrations of iron (Fe 2+ , 4.0-8.5 mM), cadmium (Cd 2+ , 0.53-3.0 mM) and sulfide (4.2-10.6 mM), the reactor was fed with ethanol at 1 g chemical oxygen demand (COD)/L and sulfate to yield a COD/SO 4 2- (g/g) ratio of 0.5. The addition of iron, up to a concentration of 8.1 mM, had a positive effect on the substrate utilization rate which increased 40% compared to the rate obtained without metal addition (0.25 g COD/g VSS-d). Nonetheless, iron concentration of 8.5 mM inhibited the specific substrate utilization rate by 57% compared to the substrate utilization rate obtained in the batch amended with 4.0 mM Fe 2+ (0.44 g COD/g VSS-d). Cadmium had a negative effect on the specific substrate utilization rate at the concentrations tested; at 3.0 mM Cd 2+ the substrate utilization rate was inhibited by 44% compared with the substrate utilization rate without metal addition. Cadmium precipitation with sulfide did not decrease the inhibition of cadmium on sulfate reduction. These results could have important practical implications mainly when considering the application of the sulfate reducing process to treat effluents with high concentrations of sulfate and dissolved metals such as iron and cadmium.

Preparation and characterization of polyaniline-cadmium sulfide nanocomposite for gas sensor application

Science.gov (United States)

Al-Jawad, Selma M. H.; Rafic, Sewench N.; Muhsen, Mustafa M.

2017-09-01

Polyaniline (PANI) was prepared by chemical oxidative polymerization of aniline monomers as emeraldine salt form. By the same method, polyaniline-cadmium sulfide nanocomposites were synthesized in the presence of different percentages (10-50 wt.%) of cadmium sulfide (CdS) which was prepared by using sol-gel method. The optical band gap was decrease with increasing of CdS concentration, that is obtained from UV-VIS measurements. From SEM and AFM, there is uniform distribution for cadmium sulfide nanoparticles in the PANI matrix. The electrical measurements of nanocomposites exhibit the effect of crystallite size and the high resistivity of CdS on the resistivity of nanocomposites. Emeraldine salt PANI, CdS and PANI-CdS nanocomposites were investigated as gas sensors. From this investigation, the sensitivity of PANI-CdS for NO2 gas increase with the increasing of operation temperature and the optimum sensitivity was obtained at 200∘C. The sensitivity of nanocomposites at best temperature (200∘C) was increased and faster response time with the increasing of CdS contents.

Improvement of the characteristics of chemical bath deposition-cadmium sulfide films deposited on an O{sub 2} plasma-treated polyethylene terephthalate substrate

Energy Technology Data Exchange (ETDEWEB)

Lim, Donggun [Department of Electronic Engineering, Korea National University of Transportation, Chungju-si, Chungcheongbuk-do 380-702 (Korea, Republic of); Lee, Jaehyeong [School of Electronic and Electrical Engineering, Sungkyunkwan University 300, Cheoncheon-dong, Jangan-gu, Sunwon, Kyeonggi-do, 440-746 (Korea, Republic of); Song, Woochang, E-mail: wcsong@kangwon.ac.kr [Department of Electrical Engineering, Kangwon National University, Samcheok-si, Gangwon-do 245-711 (Korea, Republic of)

2013-11-01

We prepared cadmium sulfide (CdS) films on a polyethylene terephthalate (PET) substrate by a chemical bath deposition (CBD) technique. To improve the adhesion between the CdS film and the PET substrate, the substrate was pre-treated with an O{sub 2} plasma by an inductively coupled plasma. The surface characterizations of the pre-treated PET substrate were analyzed by a contact angle measurement and atomic force microscopy. The results showed that that O{sub 2} plasma-treated PET films had more hydrophilic surface. The hydrophilic property of the substrate is one of the important factors when a film is prepared by CBD. The structural and the optical properties of the CdS films, deposited on PET substrates, were analyzed by using a scanning electron microscope, X-ray diffraction and a UV–visible spectrophotometer. The CdS films were formed on a compact and granular structure. The optical transmittance was also improved. Therefore, the O{sub 2} plasma treatment of a PET surface is an effective method of preparing CdS films deposited on substrates by CBD. - Highlights: • Chemical bath deposition of CdS film for flexible solar cells • O{sub 2} plasma treatment improved adhesion between the CdS and polymer substrate • Identification of best fabrication condition of CdS window layers for flexible solar cells.

Cadmium sulfide/copper ternary heterojunction cell research. Final report, April 1, 1980-August 25, 1982

Energy Technology Data Exchange (ETDEWEB)

Mickelsen, R. A.; Chen, W. S.

1982-08-01

The properties of polycrystalline, thin-film CuInSe/sub 2//CdS and CuInSe/sub 2//Zn/sub x/Cd/sub 1-x/S solar cells prepared by vacuum-evaporation techniques onto metallized-alumina substrates are described. An efficiency of 10.6% for a 1 cm/sup 2/ area cell and 8.3% for an 8 cm/sup 2/ cell when tested under simulated AM1 illumination is reported. The mixed-sulfide cells are described as exhibiting increased open-circuit voltages, slightly higher short-circuit currents, and improved efficiencies. Mixed-sulfide film preparation by evaporation of CdS and ZnS powders from a single source and from two sources is discussed with preference given to the later technique. Selenide-film preparation in a planetary or rotating substrate vacuum-deposition apparatus is described. A 1 cm/sup 2/ area cell without AR-coating produced by the planetary approach is reported to demonstrate a 7.5% efficiency. The results of cell heat-treatment studies showing a strong environmental dependence are presented and indicate the desirability of an oxygen-containing atmosphere. An automatic, computer-controlled, cell-measurement system for I-V, C-V, and spectral-response analysis is described. The results of the cell-analysis and cell-modeling studies on both the plain CdS and mixed Zn/sub x/Cd/sub 1-x/S thin-film devices are presented. Finally, data obtained from constant illumination and elevated temperature life-tests on the thin-film cells showing little degradation after 9300 hours is reported.

In situ, real-time thickness measurement techniques for bath-deposited CdS thin films on Cu(In,Ga)Se2

International Nuclear Information System (INIS)

Mann, Jonathan R.; Noufi, Rommel

2012-01-01

A technique has been developed that can measure the thickness of a 30–70 nm thin film of cadmium sulfide on a Cu(In,Ga)Se 2 substrate, in real time, as it grows in a chemical bath. The technique does not damage the film, and can be used to monitor batch depositions and roll-to-roll depositions with equal accuracy. The technique is based on reflectance spectroscopy through the chemical bath. - Highlights: ► Reflection spectra were collected during the chemical bath deposition of CdS. ► Two algorithms were generated to extract film thickness from each spectrum. ► Two conventional techniques were used to independently verify CdS film thicknesses. ► The accuracies of the algorithms are within 7% of the actual thicknesses. ► The algorithms offer in situ, real time thicknesses through the chemical bath.

The state of the art of thin-film photovoltaics

International Nuclear Information System (INIS)

Surek, T.

1993-10-01

Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

Inhibition of sulfate reduction by iron, cadmium and sulfide in granular sludge

Energy Technology Data Exchange (ETDEWEB)

Gonzalez-Silva, Blanca M. [Division de Ciencias Ambientales, Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la Presa San Jose 2055, Lomas 4a. Seccion, 78216, San Luis Potosi, S.L.P. (Mexico); Briones-Gallardo, Roberto [Facultad de Ingenieria-Instituto de Metalurgia, Universidad Autonoma de San Luis Potosi, Sierra Leona 550, Lomas 2a. Seccion, 78210, San Luis Potosi, S.L.P. (Mexico); Razo-Flores, Elias [Division de Ciencias Ambientales, Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la Presa San Jose 2055, Lomas 4a. Seccion, 78216, San Luis Potosi, S.L.P. (Mexico); Celis, Lourdes B., E-mail: celis@ipicyt.edu.mx [Division de Ciencias Ambientales, Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la Presa San Jose 2055, Lomas 4a. Seccion, 78216, San Luis Potosi, S.L.P. (Mexico)

2009-12-15

This study investigated the inhibition effect of iron, cadmium and sulfide on the substrate utilization rate of sulfate reducing granular sludge. A series of batch experiments in a UASB reactor were conducted with different concentrations of iron (Fe{sup 2+}, 4.0-8.5 mM), cadmium (Cd{sup 2+}, 0.53-3.0 mM) and sulfide (4.2-10.6 mM), the reactor was fed with ethanol at 1 g chemical oxygen demand (COD)/L and sulfate to yield a COD/SO{sub 4}{sup 2-} (g/g) ratio of 0.5. The addition of iron, up to a concentration of 8.1 mM, had a positive effect on the substrate utilization rate which increased 40% compared to the rate obtained without metal addition (0.25 g COD/g VSS-d). Nonetheless, iron concentration of 8.5 mM inhibited the specific substrate utilization rate by 57% compared to the substrate utilization rate obtained in the batch amended with 4.0 mM Fe{sup 2+} (0.44 g COD/g VSS-d). Cadmium had a negative effect on the specific substrate utilization rate at the concentrations tested; at 3.0 mM Cd{sup 2+} the substrate utilization rate was inhibited by 44% compared with the substrate utilization rate without metal addition. Cadmium precipitation with sulfide did not decrease the inhibition of cadmium on sulfate reduction. These results could have important practical implications mainly when considering the application of the sulfate reducing process to treat effluents with high concentrations of sulfate and dissolved metals such as iron and cadmium.

Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

KAUST Repository

Salas Villaseñor, Ana L.

2014-06-01

Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

KAUST Repository

Salas Villaseñ or, Ana L.; Mejia, Israel I.; Sotelo-Lerma, Mé rida; Guo, Zaibing; Alshareef, Husam N.; Quevedo-Ló pez, Manuel Angel Quevedo

2014-01-01

Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

Thin films of copper antimony sulfide: A photovoltaic absorber material

Energy Technology Data Exchange (ETDEWEB)

Ornelas-Acosta, R.E. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Shaji, S. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico)

2015-01-15

Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

Rapid biosynthesis of cadmium sulfide (CdS) nanoparticles using ...

African Journals Online (AJOL)

Rapid biosynthesis of cadmium sulfide (CdS) nanoparticles using culture supernatants of Escherichia coli ATCC 8739, Bacillus subtilis ATCC 6633 and Lactobacillus ... The process of extracellular and fast biosynthesis may help in the development of an easy and eco-friendly route for the synthesis of CdS nanoparticles.

Structural characterization of lead sulfide thin films by means of X ...

Indian Academy of Sciences (India)

Administrator

This detector can operate at any temperature between 77 and 300 K (Johnson 1984). The possibility of using very thin (20–60 nm) chemically deposited PbS films as solar control coatings have been discussed by many workers. (Nair et al 1989). Analyses of the mechanism of photo- conductivity in PbS thin films are also ...

Viscoelastic optical nonlocality of doped cadmium oxide epsilon-near-zero thin films

Energy Technology Data Exchange (ETDEWEB)

Luk, Ting S.; De Ceglia, Domenico; Scalora, Michael; Vincenti, Maria A.; Campione, Salvatore; Kelley, Kyle; Maria, Jon-Paul; Keeler, Gordon A.

2017-08-01

Optical nonlocalities are elusive and hardly observable in traditional plasmonic materials like noble and alkali metals. Here we experimentally observe and theoretically model viscoelastic nonlocalities in the infrared optical response of a doped, cadmium oxide epsilon-near-zero thin film. The nonlocality is clearly detectable thanks to the low damping rate of conduction electrons and the virtual absence of interband transitions at infrared wavelengths. We describe the motion of conduction electrons using a hydrodynamic model for a viscoelastic fluid, and find excellent agreement with experimental results. The electrons’ elasticity blue-shifts the infrared plasmonic resonance associated with the main epsilon-near-zero mode, and triggers the onset of higher-order resonances due to the excitation of electron-pressure modes above the bulk plasma frequency. We also provide evidence of the existence of nonlocal damping, i.e., viscosity, in the motion of optically-excited conduction electrons using a combination of spectroscopic ellipsometry data and predictions based on the viscoelastic hydrodynamic model.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

Science.gov (United States)

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-01

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

Energy Technology Data Exchange (ETDEWEB)

Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

2014-09-15

The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

Directory of Open Access Journals (Sweden)

Ahmet PEKSÖZ

2016-08-01

Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

Chemical synthesis of porous web-structured CdS thin films for photosensor applications

Energy Technology Data Exchange (ETDEWEB)

Gosavi, S.R., E-mail: srgosavi.taloda@gmail.com [C. H. C. Arts, S. G. P. Commerce, and B. B. J. P. Science College, Taloda, Dist., Nandurbar 425413, M. S. (India); Nikam, C.P. [B.S.S.P.M.S. Arts, Commerce and Science College, Songir, Dist., Dhule 424309, M. S. (India); Shelke, A.R.; Patil, A.M. [Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Ryu, S.-W. [Department of Physics, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Bhat, J.S. [Department of Physics, Karnatak University, Dharwad 580003 (India); Deshpande, N.G., E-mail: nicedeshpande@yahoo.co.in [Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

2015-06-15

The photo-activity of chemically deposited cadmium sulphide (CdS) thin film has been studied. The simple chemical route nucleates the CdS films with size up to the mean free path of the electron. Growth Kinematics of crystalline hexagonal CdS phase in the thin film form was monitored using X-ray diffraction. The time limitation set for the formation of the amorphous/nano-crystalline material is 40 and 60 min. Thereafter enhancement of the crystalline orientation along the desired plane was identified. Web-like porous structured surface morphology of CdS thin film over the entire area is observed. With decrease in synthesis time, increase of band gap energy i.e., a blue spectral shift was seen. The activation energy of CdS thin film at low and high temperature region was examined. It is considered that this activation energy corresponds to the donor levels associated with shallow traps or surface states of CdS thin film. The photo-electrochemical performance of CdS thin films in polysulphide electrolyte showed diode-like characteristics. Exposure of light on the CdS electrode increases the photocurrent. This suggests the possibility of production of free carriers via excited ions and also the light harvesting mechanism due to porous web-structured morphology. These studies hint that the obtained CdS films can work as a photosensor. - Highlights: • Photoactivity of chemically synthesized cadmium sulphide (CdS) thin films was studied. • Web-like porous structured surface morphology of CdS thin film over the entire area was observed. • Blue spectral shift with lowering of the synthesis time suggests films can act as a window layer over the absorber layer. • Porous web-structured CdS thin films can be useful in light harvesting.

Chemical synthesis of porous web-structured CdS thin films for photosensor applications

International Nuclear Information System (INIS)

Gosavi, S.R.; Nikam, C.P.; Shelke, A.R.; Patil, A.M.; Ryu, S.-W.; Bhat, J.S.; Deshpande, N.G.

2015-01-01

The photo-activity of chemically deposited cadmium sulphide (CdS) thin film has been studied. The simple chemical route nucleates the CdS films with size up to the mean free path of the electron. Growth Kinematics of crystalline hexagonal CdS phase in the thin film form was monitored using X-ray diffraction. The time limitation set for the formation of the amorphous/nano-crystalline material is 40 and 60 min. Thereafter enhancement of the crystalline orientation along the desired plane was identified. Web-like porous structured surface morphology of CdS thin film over the entire area is observed. With decrease in synthesis time, increase of band gap energy i.e., a blue spectral shift was seen. The activation energy of CdS thin film at low and high temperature region was examined. It is considered that this activation energy corresponds to the donor levels associated with shallow traps or surface states of CdS thin film. The photo-electrochemical performance of CdS thin films in polysulphide electrolyte showed diode-like characteristics. Exposure of light on the CdS electrode increases the photocurrent. This suggests the possibility of production of free carriers via excited ions and also the light harvesting mechanism due to porous web-structured morphology. These studies hint that the obtained CdS films can work as a photosensor. - Highlights: • Photoactivity of chemically synthesized cadmium sulphide (CdS) thin films was studied. • Web-like porous structured surface morphology of CdS thin film over the entire area was observed. • Blue spectral shift with lowering of the synthesis time suggests films can act as a window layer over the absorber layer. • Porous web-structured CdS thin films can be useful in light harvesting

Synthesis And Characterization of Copper Zinc Tin Sulfide Nanoparticles And Thin Films

Science.gov (United States)

Khare, Ankur

Copper zinc tin sulfide (Cu2ZnSnS4, or CZTS) is emerging as an alternative material to the present thin film solar cell technologies such as Cu(In,Ga)Se2 and CdTe. All the elements in CZTS are abundant, environmentally benign, and inexpensive. In addition, CZTS has a band gap of ˜1.5 eV, the ideal value for converting the maximum amount of energy from the solar spectrum into electricity. CZTS has a high absorption coefficient (>104 cm-1 in the visible region of the electromagnetic spectrum) and only a few micron thick layer of CZTS can absorb all the photons with energies above its band gap. CZT(S,Se) solar cells have already reached power conversion efficiencies >10%. One of the ways to improve upon the CZTS power conversion efficiency is by using CZTS quantum dots as the photoactive material, which can potentially achieve efficiencies greater than the present thin film technologies at a fraction of the cost. However, two requirements for quantum-dot solar cells have yet to be demonstrated. First, no report has shown quantum confinement in CZTS nanocrystals. Second, the syntheses to date have not provided a range of nanocrystal sizes, which is necessary not only for fundamental studies but also for multijunction photovoltaic architectures. We resolved these two issues by demonstrating a simple synthesis of CZTS, Cu2SnS3, and alloyed (Cu2SnS3) x(ZnS)y nanocrystals with diameters ranging from 2 to 7 nm from diethyldithiocarbamate complexes. As-synthesized nanocrystals were characterized using high resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, and energy dispersive spectroscopy to confirm their phase purity. Nanocrystals of diameter less than 5 nm were found to exhibit a shift in their optical absorption spectra towards higher energy consistent with quantum confinement and previous theoretical predictions. Thin films from CZTS nanocrystals deposited on Mo-coated quartz substrates using drop casting were found to be continuous

Tailoring and optimization of optical properties of CdO thin films for gas sensing applications

Science.gov (United States)

Rajput, Jeevitesh K.; Pathak, Trilok K.; Kumar, V.; Swart, H. C.; Purohit, L. P.

2018-04-01

Cadmium oxide (CdO) thin films have been deposited onto glass substrates using different molar concentrations (0.2 M, 0.5 M and 0.8 M) of cadmium acetate precursor solutions using a sol-gel spin coating technique. The structural, morphological, optical and electrical results are presented. X-ray diffraction patterns indicated that the CdO films of different molarity have a stable cubic structure with a (111) preferred orientation at low molar concentration. Scanning electron microscopy images revealed that the films adopted a rectangular to cauliflower like morphology. The optical transmittance of the thin films was observed in the range 200-800 nm and it was found that the 0.2 M CdO thin films showed about 83% transmission in the visible region. The optical band gap energy of the thin films was found to vary from 2.10 to 3.30 eV with the increase in molar concentration of the solution. The electrical resistance of the 0.5 M thin film was found to be 1.56 kΩ. The oxygen sensing response was observed between 20-33% in the low temperature range (32-200 °C).

Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

Science.gov (United States)

Rami, M.; Benamar, E.; Fahoume, M.; Chraibi, F.; Ennaoui, A.

1999-06-01

The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivitiy have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70-80 % range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells.

Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Rami, M.; Benamar, E.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [University Mohamed V, Laboratory of Materials Physics, Dept., Faculty of Sciences, Rabat (Morocco)

1999-06-01

The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivity have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70-80% range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells. (authors)

Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

Science.gov (United States)

Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

2018-02-02

Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

Effect of protic solvents on CdS thin films prepared by chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Yao, Pin-Chuan, E-mail: pcyao@mail.dyu.edu.tw; Chen, Chun-Yu

2015-03-31

In this study, cadmium sulfide (CdS) thin films are grown on glass substrates by chemical bath deposition (CBD) in an aqueous bath containing 10–20 vol.% alcohol. The roles of ethanol as a protic solvent that substantially improves the quality of films are explored extensively. The deposited films in an alcohol bath are found to be more compact and smoother with smaller CdS grains. The X-ray diffractograms of the samples confirm that all films were polycrystalline with mixed wurtzite (hexagonal) and zinkblende (cubic) phases. Raman spectra indicate that, for a film deposited in an alcohol bath, the position of 1LO is closer to the value for single crystal CdS, indicating that these films have a high degree of crystallinity. The as-deposited CdS thin films in a 10 vol.% alcohol bath were found to have the highest visible transmittance of 81.9%. XPS analysis reveals a stronger signal of C1s for samples deposited in the alcohol baths, indicating that there are more carbonaceous residues on the films with protic solvent than on the films with water. A higher XPS S/Cd atomic ratio for films deposited in an alcohol bath indicates that undesirable surface reactions (leading to sulfur containing compounds other than CdS) occur less frequently over the substrates. - Highlights: • Study of CBD-CdS films grown in an alcohol-containing aqueous bath is reported. • The deposited films in an alcohol bath are more compact with smaller CdS grains. • Raman spectra show that in an alcohol bath, the CdS film has a better crystallinity. • XPS reveals more carbon residues remain on the films deposited using alcohol bath. • In an alcohol bath, the undesirable surface reactions with Cd ions were hindered.

The effect of thermal annealing on the optical band gap of cadmium sulphide thin films, prepared by the chemical bath deposition technique

International Nuclear Information System (INIS)

Ampong, F. K.; Boakye, F.; Asare Donkor, N. K.

2010-01-01

Cadmium sulphide thin films have been prepared by the chemical bath deposition technique (ph 11, 70 degree centigrade). Two different sets of films were prepared under varied conditions and concentrations of their ions sources (Cd 2+ from cadmium nitrate, S 2- from thiourea) and Na 2 EDTA as a complexing agent. A UV mini-Schimazu UV-VIS Spectrophotometer was used to determine the optical absorbance of the films as a function of wavelength at room temperature over the wavelength range 200 - 600 nm. The samples were then thermally annealed for thirty minutes, at temperatures of 100 degree centigrade, and 200 degree centigrade, after which the absorbance of the films were again recorded. The band gap values obtained for the sample with 0.5 M CdS as deposited, annealed at 100 degree centigrade and 200 degree centigrade were 2.1 eV, 2.2 eV and 2.3 eV respectively. Whilst the values obtained for the sample 0.15 CdS as deposited, annealed at 100 degree centigrade and annealed at 200 degree centigrade were 2.0 eV, 2.01 eV and 2.02 eV respectively. The increase in band gap with annealing temperature might be attributed to the improvement in crystallinity in the films. (au)

Release of dissolved cadmium and sulfur nanoparticles from oxidizing sulfide minerals

Science.gov (United States)

Cadmium enrichment (relative to Fe and Zn) in paddy rice grain occurs during the pre-harvest drainage of flooded soil, which causes oxidative dissolution of sulfide minerals present in reduced soil. We investigated this process over a range of environmentally realistic Cdcontain...

Progress and issues in polycrystalline thin-film PV technologies

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K.; Ullal, H.S.; Roedern, B. von [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

The direct determination, by differential pulse anodic-stripping voltammetry at the thin mercury-film electrode, of cadmium, lead and copper

International Nuclear Information System (INIS)

Lee, A.F.

1981-01-01

This report describes the development and application of a voltammetric procedure for the direct, simultaneous determination of cadmium, lead, and copper in three SAROC reference materials (carbonatite, magnesite, and quartz). The electrolyte was a mixture of 1 M ammonium chloride, 0,1 M citric acid, and 0,025 M ascorbic acid. No interferences were encountered from Fe(III), As(III), Sb(V), Tl(I), or In(III) at the concentrations present in the samples. Intermetallic interferences were eliminated by the use of thin mercury-film electrodes not less than 80nm thick. Limits of detection were determined by the degree to which the supporting electrolyte could be purified, and were estimated to be 10ng/g, 250ng/g, and 150ng/g for cadmium, lead, and copper respectively

Cobalt sulfide thin films: Chemical growth, reaction kinetics and microstructural analysis

Energy Technology Data Exchange (ETDEWEB)

Kamble, S.S. [Thin Film and Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India); Sikora, Andrzej [Electrotechnical Institute, Division of Electrotechnology and Materials Science, ul. M Skłodowskiej-Curie 55/61, 50-369 Wroclaw (Poland); Pawar, S.T. [Thin Film and Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India); Maldar, N.N. [Polymer Chemistry Department, Solapur University, Solapur 413 255, M.S. (India); Deshmukh, L.P., E-mail: laldeshmukh@gmail.com [Thin Film and Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India)

2015-02-25

Highlights: • CoS thin films were deposited from an aqueous alkaline bath. • The CoS thin films are polycrystalline with hexagonal crystal structure. • Microstructure consists of multifaceted webbed network of elongated CoS crystallites. • MFM images revealed presence of magnetic regions mimicking surface topography. • Influence of the complexing agents is also stressed by the bandgap measurements. - Abstract: CoS thin films were successfully deposited from an aqueous alkaline bath containing ammonia and TEA as the complexing agents. Under the pre-optimized conditions (temperature = 80 ± 0.5 °C, speed of the substrate rotation = 65 ± 2 rpm and deposition period = 90 min), ammonia and TEA quantities in the reaction bath were found to play a decisive role in the final product yield. Highly uniform, dark sea-green colored and tightly adherent deposits were obtained at our experimental conditions. As-obtained CoS thin films were polycrystalline in nature with hexagonal class of crystal system as derived from the X-ray diffraction analysis. Complex multifaceted webbed network of as-grown CoS crystals elongated and threaded into each other were observed through a scanning electron microscope. Atomic force micrographs revealed collapsing of the hillocks and filling of the valleys triggering decrease in the RMS roughness for increased TEA and NH{sub 3} quantities. Magnetic force microscopy (MFM) was employed to study surface topography in terms of magnetic mapping. MFM images highlighted the existence of the magnetic clusters imitating topography. Broad absorption edge with high absorption coefficient (α ≈ 10{sup 4} cm{sup −1}) was observed for as-grown CoS thin films. Determined values of the optical bandgaps revealed influence of complexing environment on the final product.

Effect of thickness on electrical properties of SILAR deposited SnS thin films

Science.gov (United States)

Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

2016-03-01

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

CdS thin films prepared by laser assisted chemical bath deposition

International Nuclear Information System (INIS)

Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

2015-01-01

Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

CdS thin films prepared by laser assisted chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

2015-05-01

Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

Structural and optoelectronic properties of β-In{sub 2}S{sub 3} thin films to Be applied on cadmium reduced solar cells

Energy Technology Data Exchange (ETDEWEB)

Galarza Gutierrez, Uziel; Albor Aguilera, Maria Lourdes de; Hernandez Vasquez, Cesar; Aguilar Hernandez, Jorge R.; Remolina Millan, Aduljay [Instituto Politecnico Nacional - ESFM, Dept. de Fisica, U.P.A.L.M., Zacatenco (Mexico); Flores Marquez, Jose M. [Instituto Politecnico Nacional - ESIQIE, Dept. Metalurgia y Mat., U.P.A.L.M., Zacatenco (Mexico); Gonzalez Trujillo, Miguel A. [Instituto Politecnico Nacional - ESCOM, Dept. de Ciencias Basicas, U.P.A.L.M., Zacatenco (Mexico); Jimenez Olarte, Daniel [Instituto Politecnico Nacional - ESIME, SEPI, U.P.A.L.M., Zacatenco (Mexico)

2018-02-15

In{sub 2}S{sub 3} thin films are prepared by chemical bath deposition (CBD) technique to be applied as buffer layer in CdTe solar cells. CdTe photovoltaic devices are developed using In{sub 2}S{sub 3} as ''standard buffer layer'' in order to reduce the CdS thickness used as window material. It is important to examine potential thin films in a prospective life cycle study, focusing on direct costs, resource availability, and environmental impacts. Open and closed CBD system influence on the In{sub 2}S{sub 3} physical properties is analyzed. Stable tetragonal β-In{sub 2}S{sub 3} phase was confirmed by X-ray diffraction. Electrical properties were determined by four-point probe technique obtaining a resistivity value of 10{sup 2} Ω cm. CdTe solar cells performance was studied by measuring J-V characteristics and spectral quantum efficiencies. These results reveal In{sub 2}S{sub 3} thin films as buffer layer reduce the cadmium quantity used in solar cells manufacture and improve their current collection in blue wavelength region (300-500 nm). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Metal-semiconductor transition materials. FeS and VO2 thin films by RF reactive sputtering

International Nuclear Information System (INIS)

Fu, Ganhua

2007-06-01

In the present work, two MST systems, FeS and VO 2 thin films were investigated. Iron sulfide thin films over a range of composition were prepared by reactive sputtering. The influence of the substrate, sputter power, substrate temperature and stoichiometry on the structure and MST of iron sulfide films was investigated. Iron sulfide films deposited at different temperatures show temperature dependent structure and MST. FeS films on float glass show (110) and (112) orientations when the substrate temperature is 200 and 500 C, respectively. The transition temperature and width of the hysteresis loop determined from the temperature dependent conductivity curves of iron sulfide films decrease with the substrate temperature. Fe and S excess in FeS films both result in the decrease of the transition temperature and width of the hysteresis loop. The vacuum-annealing affects the MST of FeS films significantly. When FeS films were annealed below the deposition temperature, the transition temperature decreases; otherwise increases. The residual stress plays an important role during the annealing process. The higher the residual stress inside the FeS films is, the higher the transition temperature of FeS films. With the increase of the annealing temperature, the residual stress in FeS films is first released and then enhances, which gives rise first to the decrease and then increase of the transition temperature of FeS films. At high substrate temperatures, the residual stress is higher. In addition, the MST of FeS films was influenced by the ambient aging. With the increase of the aging time, the transition temperature first increases and then decreases. FeS films with different thicknesses were prepared. The correlation between the film thickness (grain size) and the MST switching characteristics of FeS films was established. With the decrease of the grain size, the density of grain boundaries increases, causing the increase of the conductivity of the semiconducting phase

Study of CdTe and HgCdTe thin films obtained by electrochemical methods

International Nuclear Information System (INIS)

Guillen, C.

1990-01-01

Cadmium telluride polycrystalline thin films were fabricated on SnO 2 -coated glass substrates by potentiostatic electrodeposition and characterized by X-ray diffraction, energy dispersive X-ray analyses (EDAX), optical and electrical measurements. The films dseposited at potentials more positive than -0.65 V vs.SCE were p-type but those deposited at more negative potentials were n-type. All CdTe thin films showed a band-gap energy about 1.45 eV and a large absorption coeffici-ent (a=10 5 cm -1 ) above de band edge. The addition of even small amounts of mercury to the CdTe produces higuer conductivity values and lower band-gap energies. We have prepared HgCdTe thin films where the band-gap energies ranged between 0.93 and 0.88 eV depending on the ratio of mercury to cadmium. Heat treatment at 300 0 C increases the crystalline diameter and alter the composition of the electrodeposited films, a decrease of the resistivity values was also observed. (Author)

Dependence of electrical and optical properties of sol-gel prepared undoped cadmium oxide thin films on annealing temperature

International Nuclear Information System (INIS)

Santos-Cruz, J.; Torres-Delgado, G.; Castanedo-Perez, R.; Jimenez-Sandoval, S.; Jimenez-Sandoval, O.; Zuniga-Romero, C.I.; Marquez Marin, J.; Zelaya-Angel, O.

2005-01-01

The effect of the annealing temperature (T a ) on the optical, electrical and structural properties of the undoped cadmium oxide (CdO) thin films obtained by the sol-gel method, using a simple precursor solution, was studied. All the CdO films annealed in the range from 200 to 450 deg. C are polycrystalline with (111) preferential orientation and present high optical transmission > 85% for wavelengths above 500 nm. The resistivity decreases as T a increases until it reaches a value of 6 x 10 -4 Ω cm for T a 350 deg. C. For higher temperatures the resistivity experiences a slight increase. Images obtained by atomic force microscopy show an evident incremental change of the aggregate size (clusters of grains) as T a increases. The grain size also increases when T a increases as observed in data calculated from X-ray measurements

Characterization of nanostructured photosensitive cadmium sulphide thin films grown by SILAR deposition technique

International Nuclear Information System (INIS)

Ubale, A.U.; Bargal, A.N.

2010-01-01

This paper reports the preparation of photosensitive nanostructured CdS thin films by successive ionic layer adsorption and reaction (SILAR) method at room temperature. To obtain good quality CdS thin films, preparative conditions such as concentration of cationic and anionic precursors, adsorption and rinsing time durations etc. are optimized. The structural, optical and electrical characterizations of the as-deposited and annealed CdS thin films were carried out using X-ray diffraction, scanning electron microscopy, optical absorption and electrical resistivity methods. The photoconductivity studies showed that the annealed films are more than that photosensitive. The TEP measurement shows that deposited films are of n-type. (author)

Synthesis and characterization of rhodium sulfide nanoparticles and thin films

International Nuclear Information System (INIS)

Sosibo, Ndabenhle M.; Revaprasadu, Neerish

2008-01-01

The synthesis and characterization of a rhodium complex, [Rh(S 2 CNEt 2 ) 2 ] is described. The complex was thermolysed at a high temperature (280 deg. C) in the presence of capping agent, hexadecylamine (HDA) to form Rh 2 S 3 nanoparticles. Rod-shaped Rh 2 S 3 nanoparticles with an average length of 26.7 nm and an average breadth of 7.8 nm were synthesized. The complex was also used as a single molecule precursor for the deposition of Rh 2 S 3 thin films on a glass substrate at 350 deg. C and 450 deg. C using the Aerosol Assisted Chemical Vapour Deposition (AACVD) technique. The resultant thin films showed temperature dependent morphologies and showed (0 2 2), (4 1 1) and (6 1 1) lattice planes characteristic of to the orthorhombic Rh 2 S 3 phase. X-ray diffraction and scanning electron microscopy techniques were used to characterize the films

Synthesis and characterization of rhodium sulfide nanoparticles and thin films

Energy Technology Data Exchange (ETDEWEB)

Sosibo, Ndabenhle M. [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886 (South Africa); Revaprasadu, Neerish [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886 (South Africa)], E-mail: nrevapra@pan.uzulula.za

2008-05-15

The synthesis and characterization of a rhodium complex, [Rh(S{sub 2}CNEt{sub 2}){sub 2}] is described. The complex was thermolysed at a high temperature (280 deg. C) in the presence of capping agent, hexadecylamine (HDA) to form Rh{sub 2}S{sub 3} nanoparticles. Rod-shaped Rh{sub 2}S{sub 3} nanoparticles with an average length of 26.7 nm and an average breadth of 7.8 nm were synthesized. The complex was also used as a single molecule precursor for the deposition of Rh{sub 2}S{sub 3} thin films on a glass substrate at 350 deg. C and 450 deg. C using the Aerosol Assisted Chemical Vapour Deposition (AACVD) technique. The resultant thin films showed temperature dependent morphologies and showed (0 2 2), (4 1 1) and (6 1 1) lattice planes characteristic of to the orthorhombic Rh{sub 2}S{sub 3} phase. X-ray diffraction and scanning electron microscopy techniques were used to characterize the films.

Band offset in zinc oxy-sulfide/cubic-tin sulfide interface from X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C.; Nair, P.K.; Nair, M.T.S., E-mail: mtsn@ier.unam.mx

2017-02-28

Highlights: • Zinc oxy-sulfide thin films, 175–240 nm, deposited by rf-sputtering from targets of ZnO + ZnS. • Oxygen content in thin films is enhanced 3–4 times compared with that in ZnO:ZnS targets. • Thin film ZnO{sub x}S{sub 1−x} with x = 0.88–0.27 and optical band gap 2.8–3.2 eV is suitable for solar cells. • The conduction band offset with SnS of cubic structure studied by XPS are +0.41 to −0.28 eV. - Abstract: Zinc oxy-sulfide, ZnO{sub x}S{sub 1−x}, has been found to provide better band alignment in thin film solar cells of tin sulfide of orthorhombic crystalline structure. Here we examine ZnO{sub x}S{sub 1−x}/SnS-CUB interface, in which the ZnO{sub x}S{sub 1−x} thin film was deposited by radio frequency (rf) magnetron sputtering on SnS thin film of cubic (CUB) crystalline structure with a band gap (E{sub g}) of 1.72 eV, obtained via chemical deposition. X-ray photoelectron spectroscopy provides the valence band maxima of the materials and hence places the conduction band offset of 0.41 eV for SnS-CUB/ZnO{sub 0.27}S{sub 0.73} and −0.28 eV for SnS-CUB/ZnO{sub 0.88}S{sub 0.12} interfaces. Thin films of ZnO{sub x}S{sub 1−x} with 175–240 nm in thickness were deposited from targets prepared with different ZnO to ZnS molar ratios. With the target of molar ratio of 1:13.4, the thin films are of composition ZnO{sub 0.27}S{sub 0.73} with hexagonal crystalline structure and with that of 1:1.7 ratio, it is ZnO{sub 0.88}S{sub 0.12}. The optical band gap of the ZnO{sub x}S{sub 1−x} thin films varies from 2.90 eV to 3.21 eV as the sulfur to zinc ratio in the film increases from 0.12:1 to 0.73:1 as determined from X-ray diffraction patterns. Thus, band offsets sought for absorber materials and zinc oxy-sulfide in solar cells may be achieved through a choice of ZnO:ZnS ratio in the sputtering target.

Aerobic transformation of cadmium through metal sulfide biosynthesis in photosynthetic microorganisms.

Science.gov (United States)

Edwards, Chad D; Beatty, Joseph C; Loiselle, Jacqueline B R; Vlassov, Katya A; Lefebvre, Daniel D

2013-07-15

Cadmium is a non-essential metal that is toxic because of its interference with essential metals such as iron, calcium and zinc causing numerous detrimental metabolic and cellular effects. The amount of this metal in the environment has increased dramatically since the advent of the industrial age as a result of mining activities, the use of fertilizers and sewage sludge in farming, and discharges from manufacturing activities. The metal bioremediation utility of phototrophic microbes has been demonstrated through their ability to detoxify Hg(II) into HgS under aerobic conditions. Metal sulfides are generally very insoluble and therefore, biologically unavailable. When Cd(II) was exposed to cells it was bioconverted into CdS by the green alga Chlamydomonas reinhardtii, the red alga Cyanidioschyzon merolae, and the cyanobacterium, Synechoccocus leopoliensis. Supplementation of the two eukaryotic algae with extra sulfate, but not sulfite or cysteine, increased their cadmium tolerances as well as their abilities to produce CdS, indicating an involvement of sulfate assimilation in the detoxification process. However, the combined activities of extracted serine acetyl-transferase (SAT) and O-acetylserine(thiol)lyase (OASTL) used to monitor sulfate assimilation, was not significantly elevated during cell treatments that favored sulfide biosynthesis. It is possible that the prolonged incubation of the experiments occurring over two days could have compensated for the low rates of sulfate assimilation. This was also the case for S. leopoliensis where sulfite and cysteine as well as sulfate supplementation enhanced CdS synthesis. In general, conditions that increased cadmium sulfide production also resulted in elevated cysteine desulfhydrase activities, strongly suggesting that cysteine is the direct source of sulfur for CdS synthesis. Cadmium(II) tolerance and CdS formation were significantly enhanced by sulfate supplementation, thus indicating that algae and cyanobacteria

Study on analytical modelling approaches to the performance of thin film PV modules in sunny inland climates

International Nuclear Information System (INIS)

Torres-Ramírez, M.; Nofuentes, G.; Silva, J.P.; Silvestre, S.; Muñoz, J.V.

2014-01-01

This work is aimed at verifying that analytical modelling approaches may provide an estimation of the outdoor performance of TF (thin film) PV (photovoltaic) technologies in inland sites with sunny climates with adequate accuracy for engineering purposes. Osterwald's and constant fill factor methods were tried to model the maximum power delivered and the annual energy produced by PV modules corresponding to four TF PV technologies. Only calibrated electrical parameters at STC (standard test conditions), on-plane global irradiance and module temperature are required as inputs. A 12-month experimental campaign carried out in Madrid and Jaén (Spain) provided the necessary data. Modelled maximum power and annual energy values obtained through both methods were statistically compared to the experimental ones. In power terms, the RMSE (root mean square error) stays below 3.8% and 4.5% for CdTe (cadmium telluride) and CIGS (copper indium gallium selenide sulfide) PV modules, respectively, while RMSE exceeds 5.4% for a-Si (amorphous silicon) or a-Si:H/μc-Si PV modules. Regarding energy terms, errors lie below 4.0% in all cases. Thus, the methods tried may be used to model the outdoor behaviour of the a-Si, a-Si:H/μc-Si, CIGS and CdTe PV modules tested – ordered from the lowest to the highest accuracy obtained – in sites with similar spectral characteristics to those of the two sites considered. - Highlights: • Simple analytical methods to model the outdoor behaviour of thin film PV (photovoltaic) technologies. • 8 PV modules were deployed outdoors over a 12-month period in two sunny inland sites. • RMSE (root mean square error) values stay below 3.8% and 4.5% in CdTe (cadmium telluride) and CIGS (copper indium gallium selenide sulfide) PV modules. • Errors remain below 4.0% for all the PV modules and sites in energy terms. • Simple methods: suitable estimation of PV outdoor behaviour for engineering purposes

Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

Science.gov (United States)

Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

2016-10-01

ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

Copper tin sulfide (CTS) absorber thin films obtained by co-evaporation: Influence of the ratio Cu/Sn

Energy Technology Data Exchange (ETDEWEB)

Robles, V., E-mail: victor.robles@ciemat.es; Trigo, J.F.; Guillén, C.; Herrero, J.

2015-09-05

Highlights: • Copper tin sulfide (CTS) thin films were grown by co-evaporation at different Cu/Sn atomic ratios. • Smooth Cu{sub 2}SnS{sub 3} layers with large grains are obtained at Cu/Sn ⩾ 1.5 and T ⩾ 350 °C. • At 450 °C, the cubic Cu{sub 2}SnS{sub 3} phase changes to tetragonal phase. • Cu{sub 2}SnS{sub 3} presents suitable optical and electrical properties for use as photovoltaic absorbers. - Abstract: Copper tin sulfide thin films have been grown on soda-lime glass substrates from the elemental constituents by co-evaporation. The synthesis was performed at substrate temperatures of 350 °C and 450 °C and different Cu/Sn ratios, adjusting the deposition time in order to obtain thicknesses above 1000 nm. The evolution of the morphological, structural, chemical, optical and electrical properties has been analyzed as a function of the substrate temperature and the Cu/Sn ratio. For the samples with Cu/Sn ⩽ 1, Cu{sub 2}Sn{sub 3}S{sub 7} and Cu{sub 2}SnS{sub 3} have been observed by XRD. Increasing the Cu/Sn to 1.5, the Cu{sub 2}SnS{sub 3} phase was the majority, being the formation completed at Cu/Sn ratio around 2. The increment of the substrate temperature leads to a change of cubic structure to tetragonal of the Cu{sub 2}SnS{sub 3} phase. The chemical treatment with KCN was effective to eliminate CuS excess detected in the samples with Cu/Sn > 2.2. The samples with Cu{sub 2}SnS{sub 3} structure show a band gap energy increasing from 0.9 to 1.25 eV and an electrical resistivity decreasing from 7 ∗ 10{sup −2} Ω cm to 3 ∗ 10{sup −3} Ω cm when the Cu/Sn atomic ratio increases from 1.5 to 2.2.

Synthesis and characterization of Fe doped cadmium selenide thin films by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur 413 512, Maharashtra (India)

2012-12-05

Highlights: Black-Right-Pointing-Pointer Simple and inexpensive method to dope trivalent Fe in CdSe thin films. Black-Right-Pointing-Pointer Fe doped CdSe thin films are highly photosensitive. Black-Right-Pointing-Pointer AFM analysis shows uniform deposition of film over the entire substrate surface. Black-Right-Pointing-Pointer The band gap energy decreases from 1.74 to 1.65 eV with Fe doping. Black-Right-Pointing-Pointer Film resistivity decreases to 6.76 Multiplication-Sign 10{sup 4} {Omega}-cm with Fe doping in CdSe thin films. - Abstract: Undoped and Fe doped CdSe thin films have been deposited onto the amorphous and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The Fe doping concentration has been optimized by photoelectrochemical (PEC) characterization technique. The structural, surface morphological, compositional, optical and electrical properties of undoped and Fe doped CdSe thin films have been studied. X-ray diffraction study reveals that the as deposited CdSe films possess hexagonal crystal structure with preferential orientation along (1 0 0) plane. AFM analysis shows uniform deposition of the film over the entire substrate surface with minimum surface roughness of 7.90 nm. Direct allowed type of transition with band gap decreasing from 1.74 to 1.65 eV with Fe doping has been observed. The activation energy of the films has been found to be in the range of 0.14-0.19 eV at low temperature and 0.27-0.44 eV at high temperature. Semi-conducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films are of n type.

Effect of composition on SILAR deposited CdxZn1-xS thin films

Science.gov (United States)

Ashith V., K.; Gowrish Rao, K.

2018-04-01

In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.

Metal-semiconductor transition materials. FeS and VO{sub 2} thin films by RF reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Fu Ganhua

2007-06-15

In the present work, two MST systems, FeS and VO{sub 2} thin films were investigated. Iron sulfide thin films over a range of composition were prepared by reactive sputtering. The influence of the substrate, sputter power, substrate temperature and stoichiometry on the structure and MST of iron sulfide films was investigated. Iron sulfide films deposited at different temperatures show temperature dependent structure and MST. FeS films on float glass show (110) and (112) orientations when the substrate temperature is 200 and 500 C, respectively. The transition temperature and width of the hysteresis loop determined from the temperature dependent conductivity curves of iron sulfide films decrease with the substrate temperature. Fe and S excess in FeS films both result in the decrease of the transition temperature and width of the hysteresis loop. The vacuum-annealing affects the MST of FeS films significantly. When FeS films were annealed below the deposition temperature, the transition temperature decreases; otherwise increases. The residual stress plays an important role during the annealing process. The higher the residual stress inside the FeS films is, the higher the transition temperature of FeS films. With the increase of the annealing temperature, the residual stress in FeS films is first released and then enhances, which gives rise first to the decrease and then increase of the transition temperature of FeS films. At high substrate temperatures, the residual stress is higher. In addition, the MST of FeS films was influenced by the ambient aging. With the increase of the aging time, the transition temperature first increases and then decreases. FeS films with different thicknesses were prepared. The correlation between the film thickness (grain size) and the MST switching characteristics of FeS films was established. With the decrease of the grain size, the density of grain boundaries increases, causing the increase of the conductivity of the semiconducting

Pulsed laser deposition of Cu-Sn-S for thin film solar cells

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

Interfacial Properties of CZTS Thin Film Solar Cell

Directory of Open Access Journals (Sweden)

N. Muhunthan

2014-01-01

Full Text Available Cu-deficient CZTS (copper zinc tin sulfide thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, UV-Vis spectroscopy, and Hall effect measurement. A CZTS solar cell device having conversion efficiency of ~0.11% has been made by depositing CdS, ZnO, ITO, and Al layers over the CZTS thin film deposited on Mo coated soda lime glass. The series resistance of the device was very high. The interfacial properties of device were characterized by cross-sectional SEM and cross-sectional HRTEM.

A statistical approach for optimizing parameters for electrodeposition of indium (III) sulfide (In2S3) films, potential low-hazard buffer layers for photovoltaic applications

Science.gov (United States)

Mughal, Maqsood Ali

Clean and environmentally friendly technologies are centralizing industry focus towards obtaining long term solutions to many large-scale problems such as energy demand, pollution, and environmental safety. Thin film solar cell (TFSC) technology has emerged as an impressive photovoltaic (PV) technology to create clean energy from fast production lines with capabilities to reduce material usage and energy required to manufacture large area panels, hence, lowering the costs. Today, cost ($/kWh) and toxicity are the primary challenges for all PV technologies. In that respect, electrodeposited indium sulfide (In2S3) films are proposed as an alternate to hazardous cadmium sulfide (CdS) films, commonly used as buffer layers in solar cells. This dissertation focuses upon the optimization of electrodeposition parameters to synthesize In2S3 films of PV quality. The work describe herein has the potential to reduce the hazardous impact of cadmium (Cd) upon the environment, while reducing the manufacturing cost of TFSCs through efficient utilization of materials. Optimization was performed through use of a statistical approach to study the effect of varying electrodeposition parameters upon the properties of the films. A robust design method referred-to as the "Taguchi Method" helped in engineering the properties of the films, and improved the PV characteristics including optical bandgap, absorption coefficient, stoichiometry, morphology, crystalline structure, thickness, etc. Current density (also a function of deposition voltage) had the most significant impact upon the stoichiometry and morphology of In2S3 films, whereas, deposition temperature and composition of the solution had the least significant impact. The dissertation discusses the film growth mechanism and provides understanding of the regions of low quality (for example, cracks) in films. In2S3 films were systematically and quantitatively investigated by varying electrodeposition parameters including bath

Synthesis and Characterization of Cadmium Sulfide Nanoparticles by Chemical Precipitation Method.

Science.gov (United States)

Devi, R Aruna; Latha, M; Velumani, S; Oza, Goldie; Reyes-Figueroa, P; Rohini, M; Becerril-Juarez, I G; Lee, Jae-Hyeong; Yi, Junsin

2015-11-01

Cadmium sulfide (CdS) nanoparticles were synthesized by chemical precipitation method using cadmium chloride (CdCl2), sodium sulfide (Na2S) and water as a solvent by varying temperatures from 20-80 degrees C. The nanoparticles were characterized by X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), High-resolution transmission electron microscopy (HR-TEM) and UV-Visible spectroscopy. XRD pattern revealed cubic crystal structure for all the synthesized CdS nanoparticles. Raman spectra showed first and second order longitudinal optical (LO) phonon vibrational modes of CdS. The size of CdS nanoparticles was found to be in the range of 15-80 nm by FE-SEM analysis, in all cases. The atomic percentage of cadmium and sulfur was confirmed to be 1:1 from EDS analysis. TEM micrograph depicts the spherical shape of the particles and the size is in the range of 15-85 nm while HR-TEM images of CdS nanoparticles exhibit well-resolved lattice fringes of the cubic structure of CdS. The optical properties of CdS were examined by UV-Visible spectroscopy which showed variation in absorption band from 460-480 nm. The band gap was calculated from the absorption edge and found to be in the range of 3.2-3.5 eV which is greater than the bulk CdS.

Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Lordi, Vincenzo [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2016-09-30

The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enabling R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.

Quantum-dot size and thin-film dielectric constant: precision measurement and disparity with simple models.

Science.gov (United States)

Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G

2015-01-14

We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles.

Inorganic insertion compounds under the form of Langmuir-Blodgett films

International Nuclear Information System (INIS)

Zylberajch, Claire

1989-01-01

As the study of organic or mineral compounds under the form of thin layers showed that they are displaying very original properties with respect to massive compounds, this research thesis reports a work which aimed at obtaining mineral conductive materials under the form of extremely thin layers, notably metallic sulfides of mercury and cadmium. Synthesis is performed in soft conditions within an organic matrix produced by using the Langmuir-Blodgett technique with successive diffusions of mineral reactants. Salt formation is monitored by infrared spectroscopy. Physical properties of these compounds have been studied by various techniques (UV, visible, and IR spectroscopy, linear dichroism, X ray diffraction, X ray photoelectron spectrometry, conduction, and so on). Structural and electronic properties of these extremely thin films confirm that metallic sulfides adopt a lamellar geometry with molecular thickness. Conductivity and photo-conductivity are interpreted by means of a conventional band diagram [fr

Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

OpenAIRE

Heimdal, Carl Philip J

2014-01-01

The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

Optical properties of Cd Se thin films obtained by pyrolytic dew

International Nuclear Information System (INIS)

Perez G, A.M.; Tepantlan, C.S.; Renero C, F.

2006-01-01

In this paper the optical properties of Cd Se thin films obtained by spray pyrolysis are presented. The films are prepared by Sodium Seleno sulphate (Na 2 SSeO 3 ) and Cadmium Chloride (CdC 12 ) mixing in aqueous environment. Optical parameters of the films (refractive index, absorption coefficient and optical ban gap) were calculated from transmittance spectra. The obtained values of the optical ban gap are compared with the result obtained by other deposition method. (Author)

A Study on Dielectric Properties of Cadmium Sulfide-Zinc Sulfide Core-Shell Nanocomposites for Application as Nanoelectronic Filter Component in the Microwave Domain

Science.gov (United States)

Devi, Jutika; Datta, Pranayee

2018-03-01

Complex permittivities of cadmium sulfide (CdS), zinc sulfide (ZnS), and of cadmium sulfide-zinc sulfide (CdS/ZnS) core-shell nanoparticles embedded in a polyvinyl alcohol matrix (PVA) were measured in liquid phase using a VectorNetwork Analyzer in the frequency range of 500 MHz-10 GHz. These nanocomposites are modeled as an embedded capacitor, and their electric field distribution and polarization have been studied using COMSOL Multiphysics software. By varying the thickness of the shell and the number of inclusions, the capacitance values were estimated. It was observed that CdS, ZnS and CdS/ZnS core-shell nanoparticles embedded in a polyvinyl alcohol matrix show capacitive behavior. There is a strong influence of the dielectric properties in the capacitive behavior of the embedded nanocapacitor. The capping matrix, position and filling factors of nanoinclusions all affect the capacitive behavior of the tested nanocomposites. Application of the CdS, ZnS and CdS/ZnS core-shell nanocomposite as the passive low-pass filter circuit has also been investigated. From the present study, it has been found that CdS/ZnS core-shell nanoparticles embedded in PVA matrix are potential structures for application as nanoelectronic filter components in different areas of communication.

Carrier Transport, Recombination, and the Effects of Grain Boundaries in Polycrystalline Cadmium Telluride Thin Films for Photovoltaics

Science.gov (United States)

Tuteja, Mohit

Cadmium Telluride (CdTe), a chalcogenide semiconductor, is currently used as the absorber layer in one of the highest efficiency thin film solar cell technologies. Current efficiency records are over 22%. In 2011, CdTe solar cells accounted for 8% of all solar cells installed. This is because, in part, CdTe has a low degradation rate, high optical absorption coefficient, and high tolerance to intrinsic defects. Solar cells based on polycrystalline CdTe exhibit a higher short-circuit current, fill factor, and power conversion efficiency than their single crystal counterparts. This is despite the fact that polycrystalline CdTe devices exhibit lower open-circuit voltages. This is contrary to the observation for silicon and III-V semiconductors, where material defects cause a dramatic drop in device performance. For example, grain boundaries in covalently-bonded semiconductors (a) act as carrier recombination centers, and (b) lead to localized energy states, causing carrier trapping. Despite significant research to date, the mechanism responsible for the superior current collection properties of polycrystalline CdTe solar cells has not been conclusively answered. This dissertation focuses on the macro-scale electronic band structure, and micro scale electronic properties of grains and grain boundaries in device-grade CdTe thin films to answer this open question. My research utilized a variety of experimental techniques. Samples were obtained from leading groups fabricating the material and devices. A CdCl 2 anneal is commonly performed as part of this fabrication and its effects were also investigated. Photoluminescence (PL) spectroscopy was employed to study the band structure and defect states in CdTe polycrystals. Cadmium vacancy- and chlorine-related states lead to carrier recombination, as in CdTe films grown by other methods. Comparing polycrystalline and single crystal CdTe, showed that the key to explaining the improved performance of polycrystalline CdTe does

Study of structural and optical properties of PbS thin films

Science.gov (United States)

Homraruen, T.; Sudswasd, Y.; Sorod, R.; Kayunkid, N.; Yindeesuk, W.

2018-03-01

This research aimed to synthesize lead sulfide (PbS) thin films on glass slides using the successive ion layer absorption and reaction (SILAR) method. We studied the optical properties and structure of PbS thin films by changing the number of dipping cycles and the concentration of precursor solution. The results of this experiment show that different conditions have a considerable influence on the thickness and absorbance of the films. When the number of dipping cycles and the concentration of the solution are increased, film thickness and absorbance tend to become higher. The xrays diffraction pattern showed all the diffraction peaks which confirmed the face center cubic and the structure of PbS had identified. Grain size computation was used to confirm how much these conditions could be affected.

Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

Directory of Open Access Journals (Sweden)

Mohd Sabri Mohd Ghazali

2011-09-01

Full Text Available Thin and transparent films of doped cadmium sulfide (CdS were obtained on commercial glass substrates by Chemical Bath Deposition (CBD technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.

Mechanism analysis of improved DLC films friction behaviors with liquid sulfidation treatment

International Nuclear Information System (INIS)

Zeng Qunfeng; Yu Fei; Dong Guangneng; Mao Junhong

2012-01-01

Highlights: ► Liquid sulfidation is applied to treat DLC films. ► Sulfur atoms are chemically bonded and the graphitization presented in the treated films. ► The treated films exhibited much lower coefficient of friction than the untreated films under dry friction condition. ► The sulfidation mechanisms are supposed as surface chemical reaction and surface diffusion. ► The presence of sulfur-containing materials and graphitization are beneficial to improve anti-friction behaviors of the treated films. - Abstract: Diamond like carbon (DLC) films were treated by liquid sulfidation to improve their friction behaviors. Friction behaviors of DLC films were experimentally evaluated in ambient air under dry friction using GCr15 steel ball sliding over DLC-coated steel flat in a ball-on-disk tribometer system. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to identify the chemical composition and structure of DLC films. It was found that the content of sp 2 carbon bond increased and G peak shifted to high wave number after sulfidation treatment. The measurement results showed that sulfur atoms were chemically bonded and the graphitization occurred in the treated DLC films. It was indicated that the treated DLC films exhibited much better friction behaviors than the untreated films, especially for DLC films deposited with high nitrogen ratio. In this paper, we proposed the possible sulfidation mechanism of sulfurized DLC films. Sulfidation mechanism is postulated that thiourea reacted with oxygen to form sulfur-containing organic compounds which included CSSC, CSOH and (NH 2 )NH=CSO 2 H and surface diffusion during sulfidation treatment. The anti-friction behaviors of the treated DLC films can be attributed to the production of the compounds containing sulfur on the DLC film surface, the reduce of oxygen content and the presence of graphitization of DLC films.

Influences of the CdS nanoparticles grown strategies on CdTe nanorods array films: A comparison between successive ionic layer absorption and reaction and chemical bath deposition

International Nuclear Information System (INIS)

Wang, Jun; Zhou, Xiaoming; Lv, Pin; Yang, Lihua; Ding, Dong; Niu, Jiasheng; Liu, Li; Li, Xue; Fu, Wuyou; Yang, Haibin

2016-01-01

The cadmium sulfide (CdS) film is deposited on the surface of cadmium telluride (CdTe) nanorods (NRs) by two different methods, successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) techniques. The influence of the deposition parameters on the properties of the films is investigated. Compared to SILAR, CBD is a simple and time saving technique, which can ensure full coverage and better growth of CdS on the surface of CdTe NRs. The photovoltaic characteristics of CdS sensitized CdTe films are also investigated. It is found that the CdTe/CBD-CdS thin film demonstrates excellent photoelectrical properties, which is ascribed to the large absorption coefficient of the material, indicating the potential applications in solar cells.

Deposition and characteristics of PbS thin films by an in-situ solution chemical reaction process

Energy Technology Data Exchange (ETDEWEB)

Ji, Junna; Ji, Huiming; Wang, Jian; Zheng, Xuerong; Lai, Junyun; Liu, Weiyan; Li, Tongfei [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); Ma, Yuanliang; Li, Haiqin; Zhao, Suqin [College of Physics and Electronic Information Engineering, Qinghai University for Nationalities, Xining 810007 (China); Jin, Zhengguo, E-mail: zhgjin@tju.edu.cn [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China)

2015-09-01

Preferential oriented and uniform PbS thin films were deposited by a room temperature in-situ solution chemical reaction process, in which the lead nitrate as precursor in a form of thin solid films from lead precursor solution was used to react with ammonium sulfide ethanol solution. Influence of 1-butanol addition in the lead precursor solution, Pb:S molar ratios in the separate cationic and anionic solutions, deposition cycle numbers and annealing treatment in Ar atmosphere on structure, morphology, chemical composition and optical absorption properties of the deposited PbS films were investigated based on X-ray diffraction, field emission scanning electron microscopy, energy dispersive spectrometer, atomic force microscopy, selected area electron diffraction, UV–vis, near infrared ray and fourier transform infrared spectroscopy measurements. The results showed that the deposited PbS thin films had a cubic structure and highly preferred orientation along with the plane (100). The deposition rate of single-layer was stable, about 30 nm in thickness per deposition cycle. - Highlights: • Time-efficiency synthetic method for the preparation of lead sulfide (PbS) films • Effect of 1-butanol addition into cationic precursor solution is discussed. • Growth rate of the PbS films is stable at about 30 nm per cycle.

Chemical bath deposition of Cu{sub 3}BiS{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Deshmukh, S.G., E-mail: deshmukhpradyumn@gmail.com; Vipul, Kheraj, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India); Panchal, A.K. [Department of Electrical Engineering, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India)

2016-05-06

First time, copper bismuth sulfide (Cu{sub 3}BiS{sub 3}) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu{sub 3}BiS{sub 3} thin films. The optical, surface morphology and structural properties of the Cu{sub 3}BiS{sub 3} thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu{sub 3}BiS{sub 3} film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the order of 10{sup 5} cm{sup −1}. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu{sub 3}BiS{sub 3} films can be applied as an absorber layer for thin film solar cells.

Structural studies on Langmuir-Blodgett ultra-thin films on tin (IV) stearate using X-ray diffraction technique

International Nuclear Information System (INIS)

Mohamad Deraman; Muhamad Mat Salleh; Mohd Ali Sulaiman; Mohd Ali Sufi

1991-01-01

X-ray diffraction measurements were carried out on Langmuir-Blodgett (LB) ultra-thin films of tin (IV) stearate for different numbers of layers. The structural information such as interplanar spacing, unit cells spacing, molecular length and orientation of molecular chains were obtained from the diffraction data. This information is discussed and compared with that previously published for LB ultra-thin films of manganese stearate and cadmium stearate

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

Science.gov (United States)

Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

2016-10-01

In this work, Pd:NiFe2O4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe2O4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost.

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

Science.gov (United States)

Ojo, A. A.; Dharmadasa, I. M.

2017-08-01

Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

Workshop proceedings: Photovoltaic conversion of solar energy for terrestrial applications. Volume 2: Invited papers

Science.gov (United States)

1973-01-01

A photovoltaic device development plan is reported that considers technological as well as economical aspects of single crystal silicon, polycrystal silicon, cadmium sulfide/copper sulfide thin films, as well as other materials and devices for solar cell energy conversion systems.

Workshop proceedings: Photovoltaic conversion of solar energy for terrestrial applications. Volume 1: Working group and panel reports

Science.gov (United States)

1973-01-01

Technological aspects of solar energy conversion by photovoltaic cells are considered. The advantage of the single crystal silicon solar cell approach is developed through comparisons with polycrystalline silicon, cadmium sulfide/copper sulfide thin film cells, and other materials and devices.

Composition and properties of nanocrystalline Zn S thin films prepared by a new chemical bath deposition route

International Nuclear Information System (INIS)

Sahraei, R.; Goudarzi, A.; Ahmadpoor, H.; Motedayen Aval, Gh.

2006-01-01

Zinc sulfide nanocrystalline thin films were prepared by a new chemical bath deposition route on soda lime glass and quartz substrates using a weak acidic bath, in which disodium salt of ethylenediaminetetraacetic acid (EDTA) acts as a complexing agent and thioacetamide acts as a source of sulfide ions. The thickness of the films varied from a few nm to 500 nm. The chemical composition of films was studied by energy-dispersive X-ray analyzer and Fourier transform infrared spectroscopy. The films are very close to Zinc sulfide stoichiometry and we did not observed any organic compounds in the impurity form in them. X-ray diffraction indicates that the film and powder formed in the same reaction bath have cubic zinc blende structure. The films have high transmittance of about 75% in the visible region. The optical band-gap energy (E g ) was determined to be 3.75 eV from the absorption spectrophotometry measurements.

A comparative study of thermal annealing effects under various atmospheres on nano-structured CdS thin films prepared by CBD

Energy Technology Data Exchange (ETDEWEB)

Kong, Lingjun; Li, Jianmin; Chen, Guilin; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn; Liu, Weifeng, E-mail: liuwf@ustc.edu.cn

2013-10-05

Highlights: •Smooth and uniform CdS thin films were deposited successfully by CBD method. •The influence of CdCl{sub 2}-assisted annealing under various atmospheres of CdS films has been investigated. •We gave a more detailed research on annealing temperature after identified the most optimal annealing method. •High quality CdS films were obtained with air–CdCl{sub 2}-assisted treatments at 400 °C for 0.5 h. •GIXRD was used as a new analysis method of CdS in this paper. -- Abstract: Cadmium sulfide (CdS) nanofilms have been deposited on the glass substrate using the chemical bath technique. The effects of CdCl{sub 2}-assisted annealing under different atmosphere (vacuum, Ar and air) on the structural, morphological and optical properties of CdS nanofilms have been studied. After identifying the optimal annealing atmosphere, we also investigated the CdS thin film annealed at different annealing temperature (300, 400 and 500 °C). Films have been characterized by GI-XRD analysis, scanning electron microscopy, and UV–Vis–NIR spectrophotometer. The as-deposited CdS films have been found to be nanocrystalline in nature with a mixture of two crystallographic phases: a hexagonal phase and a cubic phase. After annealed in air with a CdCl{sub 2} coating layer at 400 °C, the films showed pure hexagonal phase, indicating the phase transition of CdS. It was found that the treatment in air with a CdCl{sub 2} coating layer increased the crystallinity and the mean grain size of CdS film, which are advantageous to the application in solar cells as a window layer material.

Biofabrication of morphology improved cadmium sulfide nanoparticles using Shewanella oneidensis bacterial cells and ionic liquid: For toxicity against brain cancer cell lines.

Science.gov (United States)

Wang, Li; Chen, Siyuan; Ding, Yiming; Zhu, Qiang; Zhang, Nijia; Yu, Shuqing

2018-01-01

The present work determines the anticancer activity of bio-mediated synthesized cadmium sulfide nanoparticles using the ionic liquid and bacterial cells (Shewanella oneidensis). Bacterial cells have been exposed to be important resources that hold huge potential as ecofriendly, cost-effective, evading toxic of dangerous chemicals and the alternative of conventional physiochemical synthesis. The Shewanella oneidensis is an important kind of metal reducing bacterium, known as its special anaerobic respiratory and sulfate reducing capacity. The crystalline nature, phase purity and surface morphology of biosynthesized cadmium sulfide nanoparticles were analyzed by Fourier transform infrared spectroscopy, X-ray diffraction, Field emission scanning electron microscopy, Energy dispersive spectroscopy and Transmission electron microscopy. The use of imidazolium based ionic liquids as soft templating agent for controlling self-assembly and crystal growth direction of metal sulfide nanoparticles has also advanced as an important method. The microscopic techniques showed that the nanoparticles are designed on the nano form and have an excellent spherical morphology, due to the self-assembled mechanism of ionic liquid assistance. The antitumor efficiency of the cadmium sulfide nanoparticles was investigated against brain cancer cell lines using rat glioma cell lines. The effectively improved nano-crystalline and morphological structure of CdS nanoparticles in the presence of IL exhibit excellent cytotoxicity and dispersion ability on the cell shape is completely spread out showing a nice toxic environment against cancer cells. The cytotoxicity effect of cadmium sulfide nanoparticles was discussed with a diagrammatic representation. Copyright © 2017. Published by Elsevier B.V.

Photon induced facile synthesis and growth of CuInS{sub 2} absorber thin film for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Singh, Manjeet, E-mail: msitbhu@gmail.com [Department of Physics, Incheon National University, 12-1, Songdo-dong, Yeonsu-gu, Incheon 406-772 (Korea, Republic of); Jiu, Jinting; Suganuma, Katsuaki [Department of Advanced Interconnection Materials, Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047 (Japan)

2016-04-30

Graphical abstract: The thin film containing CuS and In{sub 2}S{sub 3} can be converted into CuInS{sub 2} by irradiation of intense pulses of light. - Highlights: • Photonic sintering technique is demonstrated for CuInS{sub 2} (CIS) thin film preparation. • The binary sulfides CuS and In{sub 2}S{sub 3} are converted into CIS using intense light pulses. • The light energy of 706 mJ/cm{sup 2} is found best for phase pure CIS film formation. - Abstract: In this paper, we demonstrate the use of high intensity pulsed light technique for the synthesis of phase pure CuInS{sub 2} (CIS) thin film at room temperature. The intense pulse of light is used to induce sintering of binary sulfides CuS and In{sub 2}S{sub 3} to produce CIS phase without any direct thermal treatment. Light energy equivalent to the 706 mJ/cm{sup 2} is found to be the best energy to convert the CIS precursor film deposited at room temperature into CIS pure phase and well crystalline film. The CIS absorber film thus prepared is useful in making printed solar cell at room temperature on substrate with large area.

A study on dependence of the structural, optical and electrical properties of cadmium lead sulphide thin films on Cd/Pb ratio

Energy Technology Data Exchange (ETDEWEB)

Nair, Sinitha B., E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Abraham, Anitha, E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com [Thin film research Lab, U.C. College, Aluva, Kerala (India); Pradeep, B., E-mail: bp@cusat.ac.in [Solid State Physics Laboratory, Cochin University of science and Technology, Cochin (India); Shripathi, T., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com; Ganesan, V., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com [UGC-DAE CSR, Khandwa Road, Indore, 452001, Madhya Pradesh (India)

2014-10-15

Cadmium Lead Sulphide thin films with systematic variation in Cd/Pb ratio are prepared at 333K by CBD, adjusting the reagent-molarity, deposition time and pH. XRD exhibits crystalline-amorphous transition as Cd% exceeds Pb%. AFM shows agglomeration of crystallites of size ∼50±5 nm. EDAX assess the composition whereas XPS ascertains the ternary formation, with binding energies of Pb4f{sub 7/2} and 4f{sub 5/2}, Cd3d{sub 5/2} and 3d{sub 3/2} and S2p at 137.03, 141.606, 404.667, 412.133 and 160.218 eV respectively. The optical absorption spectra reveal the variance in the direct allowed band gaps, from 1.57eV to 2.42 eV as Cd/Pb ratio increases from 0.2 to 2.7, suggesting possibility of band gap engineering in the n-type films.

PREPARATION AND CHARACTERIZATION OF IRON SULPHIDE THIN FILMS BY CHEMICAL BATH DEPOSITION METHOD

Directory of Open Access Journals (Sweden)

Anuar Kassim

2010-06-01

Full Text Available FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films obtained under deposition parameters such as bath temperature (90 °C, deposition period (90 min, electrolyte concentration (0.15 M and pH of the reactive mixture (pH 2.5. The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. X-ray diffraction displayed a pattern consistent with the formation of an orthorhombic structure, with a strong (110 preferred orientation. Atomic force microscopy image showed the substrate surface is well covered with irregular grains. A direct band gap of 1.85 eV was obtained according to optical absorption studies.   Keywords: Iron sulfide, X-ray diffraction, chemical bath deposition, thin films

Fractal features of CdTe thin films grown by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

2015-12-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Fractal features of CdTe thin films grown by RF magnetron sputtering

International Nuclear Information System (INIS)

Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

2015-01-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Investigations of the drift mobility of carriers and density of states in nanocrystalline CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Baljinder [Department of Physics, Kurukshetra University, Kurukshetra 136119 (India); Department of Physics, Panjab University, Chandigarh 160014 (India); Singh, Janpreet; Kaur, Jagdish [Department of Physics, Panjab University, Chandigarh 160014 (India); Moudgil, R.K. [Department of Physics, Kurukshetra University, Kurukshetra 136119 (India); Tripathi, S.K., E-mail: surya@pu.ac.in [Department of Physics, Panjab University, Chandigarh 160014 (India)

2016-06-01

Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-cleaned glass substrate at room temperature (300 K) by thermal evaporation technique using inert gas condensation (IGC) method. X-ray diffraction (XRD) analysis reveals that the films crystallize in hexagonal structure with preferred orientation along [002] direction. Scanning electron microscope (SEM) and Transmission electron microscope (TEM) studies reveal that grains are spherical in shape and uniformly distributed over the glass substrates. The optical band gap of the film is estimated from the transmittance spectra. Electrical parameters such as Hall coefficient, carrier type, carrier concentration, resistivity and mobility are determined using Hall measurements at 300 K. Transit time and mobility are estimated from Time of Flight (TOF) transient photocurrent technique in gap cell configuration. The measured values of electron drift mobility from TOF and Hall measurements are of the same order. Constant Photocurrent Method in ac-mode (ac-CPM) is used to measure the absorption spectra in low absorption region. By applying derivative method, we have converted the measured absorption data into a density of states (DOS) distribution in the lower part of the energy gap. The value of Urbach energy, steepness parameter and density of defect states have been calculated from the absorption and DOS spectra.

Photodiode Based on CdO Thin Films as Electron Transport Layer

Science.gov (United States)

Soylu, M.; Kader, H. S.

2016-11-01

Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

Charge transport through exciton shelves in cadmium chalcogenide quantum dot-DNA nano-bioelectronic thin films

Science.gov (United States)

Goodman, Samuel M.; Noh, Hyunwoo; Singh, Vivek; Cha, Jennifer N.; Nagpal, Prashant

2015-02-01

Quantum dot (QD), or semiconductor nanocrystal, thin films are being explored for making solution-processable devices due to their size- and shape-tunable bandgap and discrete higher energy electronic states. While DNA has been extensively used for the self-assembly of nanocrystals, it has not been investigated for the simultaneous conduction of multiple energy charges or excitons via exciton shelves (ES) formed in QD-DNA nano-bioelectronic thin films. Here, we present studies on charge conduction through exciton shelves, which are formed via chemically coupled QDs and DNA, between electronic states of the QDs and the HOMO-LUMO levels in the complementary DNA nucleobases. While several challenges need to be addressed in optimizing the formation of devices using QD-DNA thin films, a higher charge collection efficiency for hot-carriers and our detailed investigations of charge transport mechanism in these thin films highlight their potential for applications in nano-bioelectronic devices and biological transducers.

Charge transport through exciton shelves in cadmium chalcogenide quantum dot-DNA nano-bioelectronic thin films

Energy Technology Data Exchange (ETDEWEB)

Goodman, Samuel M.; Singh, Vivek [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Noh, Hyunwoo [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering Program and Department of Nanoengineering, University of California, 9500 Gilman Drive, La Jolla, San Diego, California 92093 (United States); Cha, Jennifer N. [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering Program and Department of Nanoengineering, University of California, 9500 Gilman Drive, La Jolla, San Diego, California 92093 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Nagpal, Prashant, E-mail: pnagpal@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); BioFrontiers Institute, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States); Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309 (United States)

2015-02-23

Quantum dot (QD), or semiconductor nanocrystal, thin films are being explored for making solution-processable devices due to their size- and shape-tunable bandgap and discrete higher energy electronic states. While DNA has been extensively used for the self-assembly of nanocrystals, it has not been investigated for the simultaneous conduction of multiple energy charges or excitons via exciton shelves (ES) formed in QD-DNA nano-bioelectronic thin films. Here, we present studies on charge conduction through exciton shelves, which are formed via chemically coupled QDs and DNA, between electronic states of the QDs and the HOMO-LUMO levels in the complementary DNA nucleobases. While several challenges need to be addressed in optimizing the formation of devices using QD-DNA thin films, a higher charge collection efficiency for hot-carriers and our detailed investigations of charge transport mechanism in these thin films highlight their potential for applications in nano-bioelectronic devices and biological transducers.

Charge transport through exciton shelves in cadmium chalcogenide quantum dot-DNA nano-bioelectronic thin films

International Nuclear Information System (INIS)

Goodman, Samuel M.; Singh, Vivek; Noh, Hyunwoo; Cha, Jennifer N.; Nagpal, Prashant

2015-01-01

Quantum dot (QD), or semiconductor nanocrystal, thin films are being explored for making solution-processable devices due to their size- and shape-tunable bandgap and discrete higher energy electronic states. While DNA has been extensively used for the self-assembly of nanocrystals, it has not been investigated for the simultaneous conduction of multiple energy charges or excitons via exciton shelves (ES) formed in QD-DNA nano-bioelectronic thin films. Here, we present studies on charge conduction through exciton shelves, which are formed via chemically coupled QDs and DNA, between electronic states of the QDs and the HOMO-LUMO levels in the complementary DNA nucleobases. While several challenges need to be addressed in optimizing the formation of devices using QD-DNA thin films, a higher charge collection efficiency for hot-carriers and our detailed investigations of charge transport mechanism in these thin films highlight their potential for applications in nano-bioelectronic devices and biological transducers

A study of size dependent structure, morphology and luminescence behavior of CdS films on Si substrate

International Nuclear Information System (INIS)

Kaushik, Diksha; Singh, Ragini Raj; Sharma, Madhulika; Gupta, D.K.; Lalla, N.P.; Pandey, R.K.

2007-01-01

Size tunable cadmium sulfide (CdS) films deposited by a dip coating technique on silicon (100) and indium tin oxide/glass substrates have been characterized using X-ray diffraction, X-ray reflectivity, transmission electron microscopy, atomic force microscopy and photoluminescence spectroscopy. The structural characterization indicated growth of an oriented phase of cadmium sulfide. Transmission electron microscopy used to calculate the particle size indicated narrow size dispersion. The tendency of nanocrystalline CdS films to form ordered clusters of CdS quantum dots on silicon (100) substrate has been revealed by morphological studies using atomic force microscopy. The photoluminescence emission spectroscopy of the cadmium sulfide films has also been investigated. It is shown that the nanocrystalline CdS exhibit intense photoluminescence as compared to the large grained polycrystalline CdS films. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the observed photoluminescence behavior of CdS is substantially enhanced when the nanocrystallites are assembled on silicon (100) substrate

Studies on Cd1Se0.6Te0.4 Thin Films by Spectroscopic and Diffractometer Characterization

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Cliff Orori Mosiori

2017-09-01

Full Text Available Cadmium selenide tellurium is a compound containing cadmium, tellurium and selenium elements forming a combined solid. Hall measurements suggest that it is an n-type semiconductor. Related optical studies indicate that is transparent to infra-red radiation. Structural studies clearly show that it has a wurtzite, sphalerite crystalline forms. Cadmium is a toxic heavy metal, and selenium is only toxic in large amounts or doses. By this toxicity, cadmium selenide is a known to be carcinogen to humans; however, this does not stop investigating it for optoelectronic applications. Current research has narrowed down to investigating cadmium selenide when in the form of nanoparticles. Cadmium selenide finds applications has found applications in opto-electronic devices like laser diodes, biomedical imaging, nano-sensing, high-efficiency solar cells and thin-film transistors. By chemical bath deposition, Cd1Se0.6Te0.4 thin films were grown onto glass. Tellurium was gradually introduced as an impurity and its crystalline structure and optical properties were investigated by XRD and UV-VIS spectroscopy. The main Cd1Se0.6Te0.4/glass characteristics were correlated with the conditions of growing and post-growth treatment and it was found out that films were homogeneous films with controllable thickness onto the glass substrate and suitable for n-type “sandwich” heterostructures applications. Comparison of the intensities of equivalent reflexions provided a test for the internal consistency of the measurements. Equivalent reflexions in two specimens differed on average by 1.4 % and 0.6% from the mean measured intensity, attesting to the high internal consistency of measurements from extended-face crystals. By comparison from data obtained from all samples showed their average deviation from the mean to be 0.9 %.

Structural and surface morphological studies of long chain fatty acid thin films deposited by Langmuir-Blodgett technique

Energy Technology Data Exchange (ETDEWEB)

Das, Nayan Mani, E-mail: nayanmanidas3@gmail.com [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Roy, Dhrubojyoti [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Gupta, Mukul [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India); Gupta, P.S. [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India)

2012-12-15

In the present work we aim to study the structural and surface morphological characteristics of divalent cation (cadmium ion, Cd{sup 2+}) induced thin mono- to multilayer films of fatty acids such as arachidic acid and stearic acid prepared by the Langmuir-Blodgett (LB) technique. These ultra thin films of various numbers of layers were studied by X-ray diffraction (XRD), X-ray reflectivity (XRR) and Atomic Force Microscopy (AFM). In this specific Y-type deposition, it was found that as the individual layer thickness increases, the corresponding layer by layer interfacial electron density of the thin films decreases. Since the fatty acid chain tries to maintain its minimum value of cross-sectional area, tilting occurs with respect to its nearest neighbor. The tilt angle calculated for 9 layers of cadmium arachidate (CdA{sub 2}) and cadmium stearate (CdSt{sub 2}) are 18 Degree-Sign and 19.5 Degree-Sign , respectively. An asymmetric air gap of thickness {approx}3 A was also seen between the tail parts of 2 molecular chains. The RMS roughness and average height factors calculated through AFM studies show non-uniform surface morphology of both CdA{sub 2} and CdSt{sub 2}, although the calculated topographic variations were found to have more irregularity in case of CdSt{sub 2} than in case of CdA{sub 2}.

Structural characterization of chemically deposited PbS thin films

International Nuclear Information System (INIS)

Fernandez-Lima, F.A.; Gonzalez-Alfaro, Y.; Larramendi, E.M.; Fonseca Filho, H.D.; Maia da Costa, M.E.H.; Freire, F.L.; Prioli, R.; Avillez, R.R. de; Silveira, E.F. da; Calzadilla, O.; Melo, O. de; Pedrero, E.; Hernandez, E.

2007-01-01

Polycrystalline thin films of lead sulfide (PbS) grown using substrate colloidal coating chemical bath depositions were characterized by RBS, XPS, AFM and GIXRD techniques. The films were grown on glass substrates previously coated with PbS colloidal particles in a polyvinyl alcohol solution. The PbS films obtained with the inclusion of the polymer showed non-oxygen-containing organic contamination. All samples maintained the Pb:S 1:1 stoichiometry throughout the film. The amount of effective nucleation centers and the mean grain size have being controlled by the substrate colloidal coating. The analysis of the polycrystalline PbS films showed that a preferable (1 0 0) lattice plane orientation parallel to the substrate surface can be obtained using a substrate colloidal coating chemical bath deposition, and the orientation increases when a layer of colloid is initially dried on the substrate

Selective Facet Reactivity During Cation Exchange in Cadmium Sulfide Nanorods

Energy Technology Data Exchange (ETDEWEB)

Sadtler, Bryce; Demchenko, Denis; Zheng, Haimei; Hughes, Steven; Merkle, Maxwell; Dahmen, Ulrich; Wang, Lin-Wang; Alivisatos, A. Paul

2008-12-18

The partial transformation of ionic nanocrystals through cation exchange has been used to synthesize nanocrystal heterostructures. We demonstrate that the selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. In the case of copper I (Cu+) cation exchange in cadmium sulfide (CdS) nanorods, the reaction starts preferentially at the ends of the nanorods such that copper sulfide (Cu2S) grows inwards from either end. The resulting morphology is very different from the striped pattern obtained in our previous studies of silver I (Ag+) exchange in CdS nanorods where non-selective nucleation of silver sulfide (Ag2S) occurs. From interface formation energies calculated for several models of epitaxialconnections between CdS and Cu2S or Ag2S, we infer the relative stability of each interface during the nucleation and growth of Cu2S or Ag2S within the CdS nanorods. The epitaxial connections of Cu2S to the end facets of CdS nanorods minimize the formation energy, making these interfaces stable throughout the exchange reaction. However, as the two end facets of wurtzite CdS nanorods are crystallographically nonequivalent, asymmetric heterostructures can be produced.

Electrochemical synthesis of nanoplatelets-like CuS0.2Se0.8 thin film for photoluminescence applications

Directory of Open Access Journals (Sweden)

Sharma A. K.

2015-06-01

Full Text Available Copper sulfide-selenide (CuS0.2Se0.8 thin films were deposited on FTO coated glass substrate (fluorine doped tin oxide and stainless steel substrates using electrodeposition technique. Deposited thin films were characterized using different characterization techniques viz. X-ray diffraction (XRD, scanning electron microscopy (SEM, UV-Vis spectroscopy, photoluminescence spectroscopy and surface wettability. XRD study showed polycrystalline nature with cubic phase of the films. Scanning electron microscopy showed that the surface area of the substrate was covered by the nanoplatelets structure of a thickness of 140 to 150 nm and optical study showed that the direct band gap was ~1.90 eV. Surface wettability showed hydrophobic nature of the CuS0.2Se0.8 thin films.

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

International Nuclear Information System (INIS)

Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita

2016-01-01

In this work, Pd:NiFe 2 O 4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe 2 O 4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost. - Highlights: • Ethanol gas sensors based on Pd:NiFe 2 O 4 nanoparticle thin film were fabricated. • Pd incorporation in NiFe 2 O 4 matrix inhibits grain growth. • The sensors were more selective to ethanol gas. • Sensors exhibited fast response and recovery when doped with palladium. • Pd:NiFe 2 O 4 thin film sensor displays excellent long–term stability.

Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

International Nuclear Information System (INIS)

Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H.; Kinge, Sachin

2015-01-01

Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO 2 layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10 −2  A W −1 and a shot-derived specific detectivity of 3 × 10 9  Jones at 1530 nm wavelength

Fabrication of SnS thin films by the successive ionic layer adsorption and reaction (SILAR) method

International Nuclear Information System (INIS)

Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata

2008-01-01

Tin sulfide films of 0.20 µm thickness were grown on glass and ITO substrates by the successive ionic layer adsorption and reaction (SILAR) method using SnSO 4 and Na 2 S solution. The as-grown films were well covered and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films and provided information on the crystallite size and residual strain of the thin films. FESEM revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDX showed that as-grown SnS films were slightly rich in tin component. High absorption in the visible region was evident from UV–Vis transmission spectra. PL studies were carried out with 550 nm photon excitation. To the best of our knowledge, however, no attempt has been made to fabricate a SnS thin film using the SILAR technique

Structural and optical characteristics of SnS thin film prepared by SILAR

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Mukherjee A.

2015-12-01

Full Text Available SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR method. The films were prepared using tin chloride as tin (Sn source and ammonium sulfide as sulphur (S source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.

In situ-synthesized cadmium sulfide nanowire photosensor with a parylene passivation layer for chemiluminescent immunoassays.

Science.gov (United States)

Im, Ju-Hee; Kim, Hong-Rae; An, Byoung-Gi; Chang, Young Wook; Kang, Min-Jung; Lee, Tae-Geol; Son, Jin Gyeng; Park, Jae-Gwan; Pyun, Jae-Chul

2017-06-15

The direct in situ synthesis of cadmium sulfide (CdS) nanowires (NWs) was presented by direct synthesis of CdS NWs on the gold surface of an interdigitated electrode (IDE). In this work, we investigated the effect of a strong oxidant on the surfaces of the CdS NWs using X-ray photoelectron spectroscopy, transmission electron microscopy, and time-of-flight secondary ion mass spectrometry. We also fabricated a parylene-C film as a surface passivation layer for in situ-synthesized CdS NW photosensors and investigated the influence of the parylene-C passivation layer on the photoresponse during the coating of parylene-C under vacuum using a quartz crystal microbalance and a photoanalyzer. Finally, we used the in situ-synthesized CdS NW photosensor with the parylene-C passivation layer to detect the chemiluminescence of horseradish peroxidase and luminol and applied it to medical detection of carcinoembryonic antigen. Copyright © 2017 Elsevier B.V. All rights reserved.

Formation of CdS thin films in a chemical bath environment under the action of an external magnetic field

International Nuclear Information System (INIS)

Vaskes-Luna, Kh.G.; Zekhe, A.; Nhukhil'o-Garsiya, M.P.; Starostenko, O.

2000-01-01

The effect of external magnetic field on obtaining thin CdS films on glass sub layers through the method of chemical deposition from the cadmium chloride aqueous solution is studied. The intensity and direction of the magnetic field during deposition obviously affect the number of physical properties of polycrystalline films: thickness, grain size and optical quality. The films characteristics are studied through an atomic-power microscope, light absorption spectroscopy and conductometry in darkness. The results obtained are interpreted on the basis of notions on the cadmium and sulfur specific interaction in the chemical bath with a magnetic field [ru

Selective Metallization of Well Aligned PS-b-P2VP Block Copolymers in Thin Films and in Confined Geometries

Science.gov (United States)

Sievert, James D.; Watkins, James J.; Russell, Thomas P.

2006-03-01

Well aligned, microphase-separated structures of styrene-2-vinylpyridine block copolymers are being used as templates for macromolecule-metal nanocomposites. These composites are either prepared as thin films or confined in nanoporous aluminum oxide membranes. Under optimal conditions, templates are prepared as thin films or confined nanorods and metallized without disturbing the ordered structure. We have developed a procedure that deposits metal within the polymer using supercritical carbon dioxide-soluble metal precursors. The use of supercritical carbon dioxide allows for selective metallization of the polymer at or below the glass transition, without disrupting the morphology. In addition, similar procedures have been investigated using metal salts and acids. Using these techniques, metals and metal-sulfides including silver, gold, platinum and zinc sulfide have been selectively deposited.

CATHODIC ELECTRODEPOSITION OF Cu 4 SnS 4 THIN FILMS FROM ACIDIC SOLUTION

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Anuar Kassim

2017-11-01

Full Text Available In this work the synthesis of copper tin sulfide thin films by electrodeposition is carried out. The films were deposited onto ITO glass substrates from anaqueous solution bath containingcopper sulfate, tin chloride and sodium thiosulfate at pH 1 and room temperature. Prior to the deposition, a cyclic voltammetry experiment was carried out between two potential limits (+1000 to -1000 mV versus Ag/AgCl to probe the effect of the applied potential and to determine the most likely suitable electrodeposition potential for the deposition of copper tin sulfide. The deposition was attempted at various cathodic potentials such as -400, -600, -800, -1000 mV to determine the optimum deposition potential. The films have been characterized by techniques such as optical absorption, X-ray diffraction and atomic force microscopy. The XRD patterns show that the films are polycrystalline with orthorhombic structure. The AFMstudies reveal the electrodeposited films were smooth, compact and uniform at deposition potentials of –600 mV versus Ag/AgCl. The direct optical band-gap energy was obtained to be 1.58 eV.

Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

Science.gov (United States)

Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

2017-08-15

A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL -1 ), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL -1 ). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

Synthesis and characterization of electrochemically deposited nanocrystalline CdTe thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Ragini Raj, E-mail: raginirajsingh@gmail.com [Department of Physics, Bhopal University, Bhopal-462026 (India); Department of Physical Electronics, Iby and Aladar Fleishman Faculty of Engineering, Tel-Aviv University, Tel-Aviv-69978 (Israel); Painuly, Diksha [Centre for Nanoscience and Nanotechnology, University of Kerala, Thiruanantpuram, Kerala (India); Pandey, R.K. [Department of Physics, Bhopal University, Bhopal-462026 (India)

2009-07-15

Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures. In this work we prepared the nanocrystalline CdTe thin films on indium tin oxide coated glass substrate from aqueous acidic bath at the deposition temperature 50 {+-} 1 deg. C. The films were grown potentiostatically from -0.60 V to -0.82 V with respect to saturated calomel reference electrode. The structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), atomic force microscopy (AFM), and UV-vis spectroscopy respectively and cyclic voltammetery. The structural and optical studies revealed that films are nanocrystalline in nature and possess cubic phase, also the films are preferentially oriented along the cubic (1 1 1) plane. The effect of cadmium composition on the deposited morphology was also investigated. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass approximation and tight binding approximation. It is shown that the experimentally determined absorption edges depart from the theoretically calculated values.

Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

Directory of Open Access Journals (Sweden)

Hongxia Wang

2011-01-01

Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

International Nuclear Information System (INIS)

Tariq, G.H.; Anis-ur-Rehman, M.

2011-01-01

The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

Energy Technology Data Exchange (ETDEWEB)

Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H., E-mail: ted.sargent@utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Kinge, Sachin [Advanced Technology, Materials and Research, Research and Development, Hoge Wei 33- Toyota Technical Centre, B-1930 Zaventem (Belgium)

2015-10-12

Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO{sub 2} layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10{sup −2} A W{sup −1} and a shot-derived specific detectivity of 3 × 10{sup 9} Jones at 1530 nm wavelength.

Solid thin film materials for use in thin film charge-coupled devices

International Nuclear Information System (INIS)

Lynch, S.J.

1983-01-01

Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

Temperature dependence of thermal expansion of cadmium sulfide in the temperature range 20 - 820 K

International Nuclear Information System (INIS)

Oskotskij, V.S.; Kobyakov, I.B.; Solodukhin, A.V.

1980-01-01

The linear thermal expansion of cadmium sulfide is measured perpendicularly (α 1 ) and parallelly (α 2 ) to the hexagonal axis in the temperature range from 20 to 820 K. Anisotropy is low at up to 80 K; rises at higher temperatures; at 3OO K α 1 /α 3 ratio is 1.8; at 820 K, 2.4. Heat expansion is negative at temperatures lower than 104.5 K(α 1 ) and 126.0 K(α 2 ). It achieves the minimum at 43.6 K (α 1 ) and 52.5K (α 3 ). The theory of heat expansion is plotted in the Debue, approximation and cadmium sulfide is considered as an isotope crystal with average elastic constants. Two parameters of the theory are determined by the position and value of the minimum of volumetric thermal expansion of the model isotope crystal. The theoretic curve agrees well with the experimental one at temperatures up to 160 K, i.e in the range of applicability of the Debue approximation and the isotropic model

Electrochemical preparation and characterization of n-CdSe sub 0. 65 Te sub 0. 35 polycrystalline thin films: Influence of annealing

Energy Technology Data Exchange (ETDEWEB)

Gutierrez, M T; Ortega, J [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

1989-12-01

CdSe{sub 0.65}Te{sub 0.35} thin films have been prepared by electrodeposition. The films were characterized by X-ray diffraction, optical and photoelectrochemical methods. The influence of annealing treatments on the physical parameters (grain size, d, donor concentration, N{sub D}, and hole diffusion length, L{sub P}) determining the photoelectrochemical behaviour of electrodeposited CdSe{sub 0.65}Te{sub 0.35} thin films in contact with sulfide/polysulfide electrolytes have been systematically studied. (orig.).

Thin film processes II

CERN Document Server

Kern, Werner

1991-01-01

This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

Electrosynthesis of cadmium selenide films from sodium citrate-selenosulphite bath

International Nuclear Information System (INIS)

Lokhande, C.D.; Lee, Eun-Ho; Jung, Kwang-Deog; Joo, Oh-Shim

2005-01-01

Electrosynthesis of cadmium selenide (CdSe) film has been carried out from deposition bath containing sodium selenosulphite, along with cadmium complexed with sodium citrate under potentiostatic deposition condition on titanium substrates. The pH of deposition bath was weakly basic (< 9.0). The CdSe films up to 3.0 μm were deposited. The X-ray diffraction (XRD) studies revealed that the CdSe films are microcrystalline with increased grain size after annealing. The scanning electron microscopy showed that the films are porous with cauliflower-like morphology. The photelectrochemical characterization showed that the CdSe films are photoactive

Fabrication of CdS films with superhydrophobicity by the microwave assisted chemical bath deposition.

Science.gov (United States)

Liu, Y; Tan, T; Wang, B; Zhai, R; Song, X; Li, E; Wang, H; Yan, H

2008-04-15

A simple method of microwave assisted chemical bath deposition (MA-CBD) was adopted to fabricate cadmium sulfide (CdS) thin films. The superhydrophobic surface with a water contact angle (CA) of 151 degrees was obtained. Via a scanning electron microscopy (SEM) observation, the film was proved having a porous micro/nano-binary structure which can change the property of the surface and highly enhance the hydrophobicity of the film. A possible mechanism was suggested to describe the growth of the porous structure, in which the microwave heating takes an important role in the formation of two distinct characteristic dimensions of CdS precipitates, the growth of CdS sheets in micro-scale and sphere particles in nano-scale. The superhydrophobic films may provide novel platforms for photovoltaic, sensor, microfluidic and other device applications.

Effect of different complexing agents on the properties of chemical-bath-deposited ZnS thin films

Energy Technology Data Exchange (ETDEWEB)

Liu, Jun; Wei, Aixiang, E-mail: weiax@gdut.edu.cn; Zhao, Yu

2014-03-05

Highlights: • To fabricate high quality ZnS films need to promote the ion-by-ion process and restrain cluster-by-cluster process. • The complexation ability of tri-sodium citrate is stronger than that of hydrazine hydrate. • The nucleation density of nuclei determine the performance of ZnS thin films. -- Abstract: Zinc sulfide (ZnS) thin films were deposited on glass substrates using the chemical bath deposition (CBD) technique. The effects of different complexing agents (tri-sodium citrate, hydrazine hydrate) and their concentrations on the structure, composition, morphology, optical properties and growth mechanism of ZnS thin films were investigated. The results indicated that the chemical-bath-deposited ZnS thin films exhibit poor crystallinity and a high Zn/S atomic ratio with an average transmittance of 75% in the range of visible light. The ZnS thin films prepared using hydrazine hydrate as the complexing agent present a more compact surface, a smaller average particle size, and a sharper absorption edge at 300–340 nm compared with those prepared using tri-sodium citrate. Based on our experimental observations and analysis, we conclude that the predominant growth mechanism of ZnS thin films is an ion-by-ion process. The nucleation density of Zn(OH){sub 2} nuclei on the substrate in the initial stage produces the different morphologies and properties of the ZnS thin films prepared using the two complexing agents.

A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2

International Nuclear Information System (INIS)

Calixto-Rodriguez, M.; Martinez, H.; Pena, Y.; Flores, O.; Esparza-Ponce, H.E.; Sanchez-Juarez, A.; Campos-Alvarez, J.; Reyes, P.

2010-01-01

As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb 2 S 3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E g ) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb 2 S 3 thin films decreased from 10 8 to 10 6 Ω-cm after plasma treatments.

Pyrolyzed thin film carbon

Science.gov (United States)

Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

2010-01-01

A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

CATHODIC ELECTRODEPOSITION OF Cu 4 SnS 4 THIN FILMS FROM ACIDIC SOLUTION

Directory of Open Access Journals (Sweden)

Anuar Kassim

2017-11-01

Full Text Available In this work the synthesis of copper tin sulfide thin films by electrodeposition is carried out. The films were deposited onto ITO glass substrates from an aqueous solution bath containing copper sulfate, tin chloride and sodium thiosulfate at pH 1 and room temperature. Prior to the deposition, a cyclic voltammetry experiment was carried out  between two potential limits (+1000 to -1000 mV versus Ag/AgCl to probe the effect of  the applied potential and to determine the most likely suitable electrodeposition potential  for the deposition of copper tin sulfide. The deposition was attempted at various cathodic potentials such as -400, -600, -800, -1000 mV to determine the optimum deposition  potential. The films have been characterized by techniques such as optical absorption, Xray diffraction  and  atomic  force  microscopy. The XRD patterns show that the films are polycrystalline with orthorhombic structure. The AFM studies reveal the electrodeposited films were smooth, compact and uniform at deposition potentials of –600 mV versus  Ag/AgCl. The direct optical band-gap energy was obtained to be 1.58 eV.

thin films

Indian Academy of Sciences (India)

microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

Directory of Open Access Journals (Sweden)

Hariyadi Soetedjo

2018-03-01

Full Text Available Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm−3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1 and (2 0 0 occurs during deposition. Keywords: Thin films, Lead sulfide, Sputtering, Resistivity, Semiconductor, Infrared

Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

International Nuclear Information System (INIS)

Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

2013-01-01

Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

Improved polymer thin-film wetting behavior through nanoparticle segregation to interfaces

International Nuclear Information System (INIS)

Krishnan, R S; Mackay, M E; Duxbury, P M; Hawker, C J; Asokan, Suba; Wong, Michael S; Goyette, Rick; Thiyagarajan, P

2007-01-01

We report a systematic study of improved wetting behavior for thin polymer films containing nanoparticles, as a function of nanoparticle size and concentration, the energy of the substrate and the dielectric properties of the nanoparticles. An enthalpy matched system consisting of polystyrene nanoparticles in linear polystyrene is used to show that nanoparticles are uniformly distributed in the film after spin coating and drying. However, on annealing the film above its bulk glass transition temperature these nanoparticles segregate strongly to the solid substrate. We find that for a wide range of film thicknesses and nanoparticle sizes, a substrate coverage of nanoparticles of approximately a monolayer is required for dewetting inhibition. Cadmium selenide quantum dots also inhibit dewetting of polystyrene thin films, again when a monolayer is present. Moreover, TEM microscopy images indicate that CdSe quantum dots segregate primarily to the air interface. Theoretical interpretation of these phenomena suggests that gain of linear chain configurational entropy promotes segregation of nanoparticles to the solid substrate, as occurs for polystyrene nanoparticles; however, for CdSe nanoparticles this is offset by surface energy or enthalpic terms which promote segregation of the nanoparticles to the air interface

Modifications in SnS thin films by plasma treatments

Energy Technology Data Exchange (ETDEWEB)

Martinez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210 Cuernavaca, Morelos (Mexico); Avellaneda, D. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)

2012-02-01

The present study shows the modifications of structural, optical and electrical characteristics that occur in tin sulfide (SnS) thin films treated in air and in nitrogen plasma at different pressure conditions. The films were obtained by the chemical bath deposition method, which results in SnS thin films with an orthorhombic crystalline structure, band gap (E{sub g}) of 1.1-1.2 eV, and electrical conductivities ({sigma}) in the order of 10{sup -6} {Omega}{sup -1}cm{sup -1}. The films treated with air plasma at pressures between 1 and 4 Torr, showed the presence of SnS{sub 2}, Sn{sub 2}S{sub 3}, and SnO{sub 2} phases, within the band gap values ranging from 0.9 to 1.5 eV. On the other hand, the films treated with nitrogen plasma presented the same phases, but showed a significant modification in the electrical conductivity, increasing from 10{sup -6} {Omega}{sup -1}cm{sup -1} (as-deposited) up to 10{sup -2}-10{sup -3} {Omega}{sup -1}cm{sup -1} (plasma treated). This result is a suitable range of conductivity for the improvement of the solar cells with SnS as an absorber material. Also, emission spectroscopy measurements were carried out in both air and nitrogen plasma treatments.

Fabrication and optical characterization of cadmium sulfide needles using nuclear track membrane

International Nuclear Information System (INIS)

Peng, L.Q.; Wang, S.C.; Ju, X.; Xiao, H.; Chen, H.; He, Y.J.

1999-01-01

Cadmium sulfide needles with a diameter of 0.2 μm have been fabricated in nuclear track polyethylene-terephthalate (PET) membrane by electrochemically depositing from organic solvent dimethylsulfoxide (DMSO) containing CdCl 2 and elemental sulfur at the temperature 110 deg. C. The characterization of the sample of CdS needles was studied by scanning electron microscope, X-ray diffraction, absorption and photoluminescence spectra. The optical experiments show that in the sample of CdS needles there is an absorption peak that could be assigned to the interface states of the CdS needles

Fabrication and optical characterization of cadmium sulfide needles using nuclear track membrane

Energy Technology Data Exchange (ETDEWEB)

Peng, L.Q.; Wang, S.C.; Ju, X.; Xiao, H.; Chen, H.; He, Y.J

1999-06-01

Cadmium sulfide needles with a diameter of 0.2 {mu}m have been fabricated in nuclear track polyethylene-terephthalate (PET) membrane by electrochemically depositing from organic solvent dimethylsulfoxide (DMSO) containing CdCl{sub 2} and elemental sulfur at the temperature 110 deg. C. The characterization of the sample of CdS needles was studied by scanning electron microscope, X-ray diffraction, absorption and photoluminescence spectra. The optical experiments show that in the sample of CdS needles there is an absorption peak that could be assigned to the interface states of the CdS needles.

Photosensitive space charge limited current in screen printed CdTe thin films

Science.gov (United States)

Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2018-05-01

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

Semipermeable thin-film membranes comprising siloxane, alkoxysilyl and aryloxysilyl oligomers and copolymers

Science.gov (United States)

Babcock, Walter C.; Friesen, Dwayne T.

1988-01-01

Novel semiperimeable membranes and thin film composite (TFC) gas separation membranes useful in the separation of oxygen, nitrogen, hydrogen, water vapor, methane, carbon dioxide, hydrogen sulfide, lower hydrocarbons, and other gases are disclosed. The novel semipermeable membranes comprise the polycondensation reaction product of two complementary polyfunctional compounds, each having at least two functional groups that are mutually reactive in a condensation polymerization reaction, and at least one of which is selected from siloxanes, alkoxsilyls and aryloxysilyls. The TFC membrane comprises a microporous polymeric support, the surface of which has the novel semipermeable film formed thereon, preferably by interfacial polymerization.

Thin Film Microbatteries

International Nuclear Information System (INIS)

Dudney, Nancy J.

2008-01-01

Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

Effect of Heat and Laser Treatment on Cu2S Thin Film Sprayed on Polyimide Substrate

Science.gov (United States)

Magdy, Wafaa; Mahmoud, Fawzy A.; Nassar, Amira H.

2018-02-01

Three samples of copper sulfide Cu2S thin film were deposited on polyimide substrate by spray pyrolysis using deposition temperature of 400°C and deposition time of about 45 min. One of the samples was left as deposited, another was heat treated, while the third was laser treated. The structural, surface morphological, optical, mechanical, and electrical properties of the films were investigated. X-ray diffraction (XRD) analysis showed that the copper sulfide films were close to copper-rich phase (Cu2S). Increased crystallite size after heat and laser treatment was confirmed by XRD analysis and scanning electron microscopy. Vickers hardness measurements showed that the samples' hardness values were enhanced with increasing crystallite size, representing an inverse Hall-Petch (H-P) effect. The calculated optical bandgap of the treated films was lower than that of the deposited film. Finally, it was found that both heat and laser treatment enhanced the physical properties of the sprayed Cu2S films on polyimide substrate for use in solar energy applications.

Tungsten oxide (WO3) thin films for application in advanced energy systems

International Nuclear Information System (INIS)

Gullapalli, S. K.; Vemuri, R. S.; Manciu, F. S.; Enriquez, J. L.; Ramana, C. V.

2010-01-01

Inherent processes in coal gasification plants produce hazardous hydrogen sulfide (H 2 S), which must be continuously and efficiently detected and removed before the fuel is used for power generation. An attempt has been made in this work to fabricate tungsten oxide (WO 3 ) thin films by radio-frequency reactive magnetron-sputter deposition. The impetus being the use of WO 3 films for H 2 S sensors in coal gasification plants. The effect of growth temperature, which is varied in the range of 30-500 deg. C, on the growth and microstructure of WO 3 thin films is investigated. Characterizations made using scanning electron microscopy (SEM) and x-ray diffraction (XRD) indicate that the effect of temperature is significant on the microstructure of WO 3 films. XRD and SEM results indicate that the WO 3 films grown at room temperature are amorphous, whereas films grown at higher temperatures are nanocrystalline. The average grain-size increases with increasing temperature. WO 3 films exhibit smooth morphology at growth temperatures ≤300 deg. C while relatively rough at >300 deg. C. The analyses indicate that the nanocrystalline WO 3 films grown at 100-300 deg. C could be the potential candidates for H 2 S sensor development for application in coal gasification systems.

Plasma-assisted co-evaporation of {beta}-indium sulfide thin films

Energy Technology Data Exchange (ETDEWEB)

Kosaraju, Sreenivas; Marino, Joseph A.; Harvey, John A.; Wolden, Colin A. [Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401 (United States)

2006-05-05

This paper describes the development of plasma-assisted co-evaporation (PACE) for the formation of {beta}-In{sub 2}S{sub 3} thin films. Indium was supplied by conventional thermal evaporation, while the chalcogen gas precursor (H{sub 2}S) was activated using an inductively coupled plasma (ICP) source. Using a combination of optical emission spectroscopy and mass spectrometry it was shown that the ICP effectively dissociated H{sub 2}S, producing atomic sulfur. Transport modeling was used to quantify the flux distributions of the co-evaporated metal and the plasma-generated species impinging the substrate. Model predictions were validated by measurements of deposition rate and film properties. Substantial improvements in both materials utilization and substrate temperature reduction were realized with respect to conventional co-evaporation. {beta}-In{sub 2}S{sub 3} was formed as low as 100{sup o}C and it was observed that quality was a strong function of S/In ratio. The grain size decreased and the optical band gap increased as the substrate temperature was reduced. (author)

Nanocrystalline Pd:NiFe{sub 2}O{sub 4} thin films: A selective ethanol gas sensor

Energy Technology Data Exchange (ETDEWEB)

Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita, E-mail: smb.agc@gmail.com

2016-10-15

In this work, Pd:NiFe{sub 2}O{sub 4} thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe{sub 2}O{sub 4} thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost. - Highlights: • Ethanol gas sensors based on Pd:NiFe{sub 2}O{sub 4} nanoparticle thin film were fabricated. • Pd incorporation in NiFe{sub 2}O{sub 4} matrix inhibits grain growth. • The sensors were more selective to ethanol gas. • Sensors exhibited fast response and recovery when doped with palladium. • Pd:NiFe{sub 2}O{sub 4} thin film sensor displays excellent long–term stability.

Effect of annealing time on optical and electrical properties of CdS thin films

Science.gov (United States)

Soliya, Vanshika; Tandel, Digisha; Patel, Chandani; Patel, Kinjal

2018-05-01

Cadmium sulphide (CdS) is semiconductor compound of II-VI group. Thin film of CdS widely used in the applications such as, a buffer layer in copper indium diselenide (CIS) hetrojunction based solar cells, transistors, photo detectors and light emitting diodes. Because of the ease of making like chemical bath deposition (CBD), screen printing and thermal evaporation. It is extensively used in the CIS based solar cells as a buffer layers. The buffer layers usually used for reducing the interface recombination of the photo generated carriers by means of improving the lattice mismatch between the layers. The optimum thickness and the optoelectronics properties of CdS thin films like, optical band gap, electrical resistivity, structure, and composition etc., are to be considering for its use as a buffer layer. In the present study the CdS thin film were grown by simple dip coating method. In this method we had prepared 0.1M Cadmium-thiourea precursor solution. Before the deposition process of CdS, glass substrate has been cleaned using Methanol, Acetone, Trichloroethylene and De-ionized (DI) water. After coating of precursor layer, it was heated at 200 °C for themolysis. Then after CdS films were annealed at 200 °C for different time and studied its influence on the optical transmission, band gap, XRD, raman and the electrical resistivity. As increasing the annealing time we had observed the average transmission of the films was reduce after the absorption edge. In addition to the blue shift of absorption edge was observed. The observed optimum band gap was around 2.50 eV. XRD and raman analysis confirms the cubuc phase of CdS. Hot probe method confirms the n-type conductivity of the CdS film. Hall probe data shows the resistivity of the films was in the order of 103 Ωcm. Observed data signifies its future use in the many optoelectronics devices.

Ceramic Composite Thin Films

Science.gov (United States)

Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Effects of Various Parameters on Structural and Optical Properties of CBD-Grown ZnS Thin Films: A Review

Science.gov (United States)

Sinha, Tarkeshwar; Lilhare, Devjyoti; Khare, Ayush

2018-02-01

Zinc sulfide (ZnS) thin films deposited by chemical bath deposition (CBD) technique have proved their capability in a wide area of applications including electroluminescent and display devices, solar cells, sensors, and field emitters. These semiconducting thin films have attracted a much attention from the scientific community for industrial and research purposes. In this article, we provide a comprehensive review on the effect of various parameters on various properties of CBD-grown ZnS films. In the first part, we discuss the historical background of ZnS, its basic properties, and the advantages of the CBD technique. Detailed discussions on the film growth, structural and optical properties of ZnS thin films affected by various parameters, such as bath temperature and concentration, deposition time, stirring speed, complexing agents, pH value, humidity in the environment, and annealing conditions, are also presented. In later sections, brief information about the recent studies and findings is also added to explore the scope of research work in this field.

Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

International Nuclear Information System (INIS)

Kundu, Sambhu; Olsen, Larry C.

2005-01-01

Cadmium-free copper indium gallium sulfur-selenide (CIGSS) thin film solar cells have been fabricated using chemical bath deposited (CBD) zinc sulfide (ZnS) buffer layers. Shell Solar Industries provided high quality CIGSS absorber layers. The use of CBD-ZnS, which is a higher band gap material than CdS, improved the quantum efficiency of fabricated cells at lower wavelengths, leading to an increase in short circuit current. The best cell to date yielded an active area (0.43 cm 2 ) efficiency of 13.3%. The effect of the ZnS buffer layer thickness on device performance was studied carefully. This paper also presents a discussion of issues relevant to the use of the CBD-ZnS buffer material for improving device performance

Optical and electrical characterization of AgInS2 thin films deposited by spray pyrolysis

International Nuclear Information System (INIS)

Calixto-Rodriguez, M.; Martinez, H.; Calixto, M.E.; Pena, Y.; Martinez-Escobar, Dalia; Tiburcio-Silver, A.; Sanchez-Juarez, A.

2010-01-01

Silver indium sulfide (AgInS 2 ) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (T s ) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS 2 thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS 2 , Ag 2 S, In 2 O 3 , and In 2 S 3 can be grown only by changing the Ag:In:S ratio in the starting solution and T s . So that, by carefully selecting the deposition parameters, single phase AgInS 2 thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and T s = 400 o C, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 Ω -1 cm -1 in the dark.

Morphology, microstructure, and magnetic properties of ordered large-pore mesoporous cadmium ferrite thin film spin glasses.

Science.gov (United States)

Reitz, Christian; Suchomski, Christian; Chakravadhanula, Venkata Sai Kiran; Djerdj, Igor; Jagličić, Zvonko; Brezesinski, Torsten

2013-04-01

Herein, we report the synthesis, microstructure, and magnetic properties of cadmium ferrite (CdFe2O4) thin films with both an ordered cubic network of 18 nm diameter pores and single-phase spinel grains averaging 13 nm in diameter. These mesoporous materials were produced through facile polymer templating of hydrated nitrate salt precursors. Both the morphology and the microstructure, including cation site occupancy and electronic bonding configuration, were analyzed in detail by electron microscopy, grazing incidence small-angle X-ray scattering, Raman and X-ray photoelectron spectroscopy, and N2-physisorption. The obtained data demonstrate that the network of pores is retained up to annealing temperatures as high as 650 °C--the onset of crystallization is at ϑ = (590 ± 10) °C. Furthermore, they show that the polymer-templated samples exhibit a "partially" inverted spinel structure with inversion parameter λ = 0.40 ± 0.02. This differs from microcrystalline CdFe2O4 which shows virtually no inversion. Magnetic susceptibility studies reveal ferrimagnetic spin coupling below 147 K and further point to the likelihood of glassy behavior at low temperature (T(f) ≈ 60 K). In addition, analysis of room temperature magnetization data indicates the presence of sub-10 nm diameter superparamagnetic clusters in an otherwise paramagnetic environment.

Structural, optical, and photoluminescence characterization of electron beam evaporated ZnS/CdSe nanoparticles thin films

Science.gov (United States)

Mohamed, S. H.; Ali, H. M.

2011-01-01

Structural, optical, and photoluminescence investigations of ZnS capped with CdSe films prepared by electron beam evaporation are presented. X-ray diffraction analysis revealed that the ZnS/CdSe nanoparticles films contain cubic cadmium selenide and hexagonal zinc sulfide crystals and the ZnS grain sizes increased with increasing ZnS thickness. The refractive index was evaluated in terms of envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index values were found to increase with increasing ZnS thickness. However, the optical band gap and the extinction coefficient were decreased with increasing ZnS thickness. Photoluminescence (PL) investigations revealed the presence of two broad emission bands. The ZnS thickness significantly influenced the PL intensities.

Ammonia-free chemical bath method for deposition of microcrystalline cadmium selenide films

International Nuclear Information System (INIS)

Lokhande, C.D.; Lee, Eun-Ho; Jung, Kwang-Deog; Joo, Oh-Shim

2005-01-01

Chemical deposition of cadmium selenide (CdSe) films has been carried out from alkaline aqueous solution containing Cd 2+ and Se 2- ions. In general, the alkaline pH of the CdSe deposition bath has been adjusted by addition of liquid ammonia. However, the use of ammonia in large-scale chemical deposition method represents an environmental problem due to its volatility and toxicity. The volatility of ammonia changes the pH of deposition bath and results into irreproducible film properties. In the present paper, ammonia-free and weak alkaline (pH < 9.0) chemical method for cadmium selenide film has been developed. The cadmium selenide films are microcrystalline (grain size 0.5-0.7 μm) with hexagonal crystal structure. These films are photoactive and therefore, useful in photo conversion of light into electrical power

Optical and electrical properties of Zn{sub 1-x}Cd{sub x}O thin films

Energy Technology Data Exchange (ETDEWEB)

Joishy, Sumanth; Rajendra, B.V. [Manipal University, Department of Physics, Manipal Institute of Technology, Manipal (India)

2017-11-15

This report includes comprehensive studies on the influence of cadmium doping level of structure, surface morphology, optical and electrical properties of synthesized Zn{sub 1-x}Cd{sub x}O thin films by simple and inexpensive spray pyrolysis method under optimized deposition conditions using zinc acetate dihydrate and cadmium acetate dihydrate as precursors. All deposited films were polycrystalline in nature. The deposits were having 20-50% of the Cd content-shown mixture of hexagonal-cubic phases. However, with increasing Cd concentration only cubic phases were observed. The films have a fibrous structure change to the spherical nano-structure when doping level is more than 10% in the deposits. The composition of the Zn{sub x}Cd{sub 1-x}O-deposited films was confirmed by EDAX spectrum. Optical transmittance of deposits in the visible range was decreased with increasing Cd dopant. The change of energy band gap of Cd-doped ZnO films from 3.01 to 2.29 eV was observed. A systematic increase of the films n-type electrical conductivity was noticed due to increasing carrier concentration in the deposits except for 40% of Cd doping. (orig.)

Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

Cuprous sulfide as a film insulation for superconductors

International Nuclear Information System (INIS)

Wagner, G.R.; Uphoff, J.H.; Vecchio, P.D.

1982-01-01

The LCP test coil utilizes a conductor of forced-flow design having 486 strands of multifilametary Nb 3 Sn compacted in a stainless steel sheath. The impetus for the work reported here stemmed from the need for some form of insulation for those strands to prevent sintering during reaction and to reduce ac losses. The work reported here experimented with cuprous sulfide coatings at various coating rates and thicknesses. Two solenoids that were wound with cuprous sulfide-coated wires and heat-treated at 700 degrees C were found to demonstrate that the film is effective in providing turn-to-turn insulation for less than about 0.5V between turns. The sulfide layer provided a metal-semiconductor junction which became conducting at roughly 0.5V. Repeated cycling of the coil voltage in excess of that value produced no damage to the sulfide layer. The junction provided self-protection for the coil as long as the upper allowable current density in the sulfide was not exceeded. No training was apparent up to 6.4 T

Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

Energy Technology Data Exchange (ETDEWEB)

Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

2013-01-15

Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

Electrodeposition and characterization of CdSe x-Te 1- x semiconducting thin films

Science.gov (United States)

Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A.

1999-07-01

Thin polycrystalline films of cadmium chalcogenides CdSe xTe 1-x ( 0 ≤ x ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 °C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe xTe 1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

Chemical bath deposition of Hg doped CdSe thin films and their characterization

International Nuclear Information System (INIS)

Bhuse, V.M.

2005-01-01

The deliberate addition of Hg in CdSe thin film have been carried out using a simple, modified, chemical bath deposition technique with the objective to study the effect of Hg doping on properties of CdSe thin films. Synthesis was initiated at 278 K temperature using complexed cadmium sulphate, mercuric nitrate and sodium selenosulphate in an aqueous ammonical medium at pH 10. Films were characterized by XRD, SEM, optical absorption, electrical and thermoelectric techniques. The 'as deposited' films were uniform, well adherent, nearly stoichiometric and polycrystalline in a single cubic phase (zinc blende). Crystallite size determined from XRD and SEM was found to increase slightly with addition of Hg. The optical band gap of CdSe remains constant upto 0.05 mol% Hg doping, while it decreases monotonically with further increase in mercury content. Dark dc electrical resistivity and conduction activation energy of CdSe were found to decrease initially upto 0.05 mol% of Hg, thereafter increased for higher values of Hg but remains less than those of CdSe. All the films showed n-type of conductivity. A CdSe film containing 0.05 mol% of Hg showed higher absorption coefficient, and conductivity

NMR characterization of thin films

Science.gov (United States)

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

Science.gov (United States)

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Influence of sulfidation treatment on the structure and tribological properties of nitrogen-doped diamond-like carbon films

International Nuclear Information System (INIS)

Zeng Qunfeng; Dong Guangneng; Xie Youbai

2008-01-01

The nitrogen-doped diamond-like carbon (DLC) films were deposited on high speed steel (HSS) substrates in the direct current unbalanced magnetron sputtering system. Sulphurized layer was formed on the surface of DLC films by means of liquid sulfidation in the intermixture of urea and thiourea solution in order to improve the tribological properties of DLC films. The influence of sulfidation treatment on the structure and tribological properties of DLC films was investigated in this work. The structure and wear surface morphology of DLC films were analyzed by Raman spectroscopy, XPS and SEM, respectively. It reveals that the treated films are smooth and uniform; and sulfur atoms are bonded chemically. The treated films have broader distribution of Raman spectra in the range of 1000-1800 cm -1 and higher I D /I G ratio than the untreated films as a result of the appearance of the crystalline graphite structure after the sulfidation treatment. It is showed that the sp 2 relative content increase in the treated films from the XPS measurement. The Raman results are consistent with the XPS results. The tribological properties of DLC films were investigated using a ball-on-disk rotating friction and wear tester under dry friction conditions. It is found that the sulfidation concentration plays an important part in the tribological properties of the treated DLC films. The results showed the treated films with low sulfidation concentration have a lower friction coefficient (0.1) than the treated films with high sulfidation concentration (0.26) and the untreated films (0.27) under the same friction testing conditions, which can be attributed to both the presence of sulfur-containing materials and the forming of the mechanical alloyed layer on the wear surface. Adding the dry nitrogen to the sliding surface in the testing system helps the friction coefficient of the treated films with low sulfidation concentration to decrease to 0.04 further in this work. On the basis of the

A comparative study of the physical properties of Sb{sub 2}S{sub 3} thin films treated with N{sub 2} AC plasma and thermal annealing in N{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Calixto-Rodriguez, M., E-mail: manuela@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Martinez, H. [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Pena, Y. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba s/n, Cd. Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Flores, O. [Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Esparza-Ponce, H.E. [Centro de Investigacion en Materiales Avanzados S.C., Laboratorio Nacional de Nanotecnologia, Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, Chihuahua 31109 (Mexico); Sanchez-Juarez, A.; Campos-Alvarez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Privada Xochicalco s/n, Col. Centro, 62580, Temixco, Morelos (Mexico); Reyes, P. [Facultad de Ciencias, Departamento de Fisica, Universidad Autonoma del Estado de Mexico, Instituto Literario 100, Col. Centro, 50000, Toluca, Estado de Mexico (Mexico)

2010-02-01

As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb{sub 2}S{sub 3} thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E{sub g}) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb{sub 2}S{sub 3} thin films decreased from 10{sup 8} to 10{sup 6} {Omega}-cm after plasma treatments.

Cadmium

NARCIS (Netherlands)

Meulenbelt, Jan

2017-01-01

Together with zinc and mercury, cadmium belongs to group IIb of the periodic table. It can be found in rocks, soil, water, coal, zinc ore, lead ore, and copper ore. In the environment, cadmium is present predominantly as the oxide or as the chloride, sulfide, or sulfate salt. It has no recognizable

Handbook of thin film technology

CERN Document Server

Frey, Hartmut

2015-01-01

“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

Growth of different phases and morphological features of MnS thin films by chemical bath deposition: Effect of deposition parameters and annealing

Energy Technology Data Exchange (ETDEWEB)

Hannachi, Amira, E-mail: amira.hannachi88@gmail.com; Maghraoui-Meherzi, Hager

2017-03-15

Manganese sulfide thin films have been deposited on glass slides by chemical bath deposition (CBD) method. The effects of preparative parameters such as deposition time, bath temperature, concentration of precursors, multi-layer deposition, different source of manganese, different complexing agent and thermal annealing on structural and morphological film properties have been investigated. The prepared thin films have been characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It exhibit the metastable forms of MnS, the hexagonal γ-MnS wurtzite phase with preferential orientation in the (002) plane or the cubic β-MnS zinc blende with preferential orientation in the (200) plane. Microstructural studies revealed the formation of MnS crystals with different morphologies, such as hexagons, spheres, cubes or flowers like. - Graphical Abstract: We report the preparation of different phases of manganese sulfide thin films (γ, β and α-MnS) by chemical bath deposition method. The effects of deposition parameters such as deposition time and temperature, concentrations of precursors and multi-layer deposition on MnS thin films structure and morphology were investigated. The influence of thermal annealing under nitrogen atmosphere at different temperature on MnS properties was also studied. Different manganese precursors as well as different complexing agent were also used. - Highlights: • γ and β-MnS films were deposited on substrate using the chemical bath deposition. • The effect of deposition parameters on MnS film properties has been investigated. • Multi-layer deposition was also studied to increase film thickness. • The effect of annealing under N{sub 2} at different temperature was investigated.

Rare Earth Oxide Thin Films

CERN Document Server

Fanciulli, Marco

2007-01-01

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

Energy Technology Data Exchange (ETDEWEB)

Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

2011-09-01

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

International Nuclear Information System (INIS)

Watanabe, S.

1984-01-01

The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

International Nuclear Information System (INIS)

Henriquez, R.; Badan, A.; Grez, P.; Munoz, E.; Vera, J.; Dalchiele, E.A.; Marotti, R.E.; Gomez, H.

2011-01-01

Highlights: → Electrodeposition of CdSe nanocrystalline semiconductor thin films. → Polycrystalline wurtzite structure with a slight (1010) preferred orientation. → Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

Growth of manganese sulfide (α-MnS) thin films by thermal vacuum evaporation: Structural, morphological and optical properties

Energy Technology Data Exchange (ETDEWEB)

Hannachi, Amira, E-mail: amira.hannachi88@gmail.com [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia); Segura, Alfredo [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Maghraoui-Meherzi, Hager [Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia)

2016-09-15

MnS thin films have been successfully prepared by thermal evaporation method at different substrate temperatures using different masses of MnS powder. The prepared films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and UV–visible spectrophotometry. The XRD measurements show that the films crystallized in the pure α-MnS for substrate temperatures above 100 °C. The optical bandgap of thin films is found to be in the range of 3.2–3.3 eV. A factorial experimental design was used for determining the influence of the two experimental parameters on the films growth. - Highlights: • α-MnS films were deposited on glass and quartz substrates using the thermal evaporation technique. • The effect of substrate temperature on the properties of the MnS films has been studied. • The factorial design was used to determine the most influence parameters.

Optical properties of cadmium sulfide nanocrystal film prepared by electrochemical synthesis at liquid-liquid interface

International Nuclear Information System (INIS)

Luan Yemei; An Maozhong; Lu Guoqi

2006-01-01

Dendritic nanocrystalline CdS film was deposited at liquid-liquid interface of surfactants and an electrolyte containing 4 mmol L -1 cadmium chloride (CdCl 2 ) and 16 mmol L -1 thioacetamide (CH 3 CSNH 2 ) with an initial pH value of 5 at 15 deg. C by electrochemical synthesis. The nanofilm was characterized by transmission electron microscopy (TEM), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), ultraviolet visible (UV-vis) absorption spectroscopy and fluorescence spectroscopy. The surface morphology and particle size of the nanofilm were investigated by AFM, SEM and TEM, and the crystalline size was 30-50 nm. The thickness of the nanofilm calculated by optical absorption spectrum was 80 nm. The microstructure and composition of the nanofilm was investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), showing its polycrystalline structure consisting of CdS and Cd. Optical properties of the nanofilm were investigated systematically by UV-vis absorption and fluorescence spectroscopy. A λ onset blue shift compared with bulk CdS was observed in the absorption spectra. Fluorescence spectra of the nanofilm indicated that the CdS nanofilm emitted blue and green light. The nanocomposites film electrode will bring about anodic photocurrent during illumination, showing that the transfer of cavities produces photocurrent

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Corrosion Behavior of Cu40Zn in Sulfide-Polluted 3.5% NaCl Solution

Science.gov (United States)

Song, Q. N.; Xu, N.; Bao, Y. F.; Jiang, Y. F.; Gu, W.; Yang, Z.; Zheng, Y. G.; Qiao, Y. X.

2017-10-01

The corrosion behavior of a duplex-phase brass Cu40Zn in clean and sulfide-polluted 3.5% NaCl solutions was investigated by conducting electrochemical and gravimetric measurements. The corrosion product films were analyzed by scanning electron microscopy, energy-dispersive spectroscopy and x-ray diffraction. The presence of sulfide shifted the corrosion potential of Cu40Zn toward a more negative value by 100 mV and increased the mass loss rate by a factor of 1.257 compared with the result in the clean solution. The corrosion product film in the clean solution was thin and compact; it mainly consisted of oxides, such as ZnO and Cu2O. By contrast, the film in the sulfide-polluted solution was thick and porous. It mainly contained sulfides and zinc hydroxide chloride (i.e., Zn5(OH)8Cl2·H2O). The presence of sulfide ions accelerated the corrosion damage of Cu40Zn by hindering the formation of protective oxides and promoting the formation of a defective film which consisted of sulfides and hydroxide chlorides.

Luminescent behavior of cadmium sulfide quantum dots for gallic acid estimation

Science.gov (United States)

Singh, Suman; Garg, Sourav; Chahal, Jitender; Raheja, Khushboo; Singh, Deepak; Singla, M. L.

2013-03-01

Thioglycolic acid capped cadmium sulfide (CdS/T) quantum dots have been synthesized using wet chemistry and their optical behavior has been investigated using UV-visible absorption and fluorescence spectroscopy. The role of the capping agent, sulfide source concentration, pH and temperature has been studied and discussed. Studies showed that alkaline pH leads to a decrease in the size of quantum dots and reflux temperature above 70 °C resulted in red-shift of emission spectra which is due to narrowing of the bandgap. Further, to reduce the toxicity and photochemical instability of quantum dots, the quantum dots have been functionalized with polyethylene glycol (PEG), which resulted in a 20% enhancement of the fluorescence intensity. The application potential of CdS/T-PEG quantum dots was further studied using gallic acid as a model compound. The sensing is based on fluorescence quenching of quantum dots in the presence of gallic acid, and this study showed linearity in the range from 1.3 × 10-8 to 46.5 × 10-8 mM, with a detection limit of 3.6 × 10-8 mM.

Luminescent behavior of cadmium sulfide quantum dots for gallic acid estimation

International Nuclear Information System (INIS)

Singh, Suman; Garg, Sourav; Chahal, Jitender; Raheja, Khushboo; Singla, M L; Singh, Deepak

2013-01-01

Thioglycolic acid capped cadmium sulfide (CdS/T) quantum dots have been synthesized using wet chemistry and their optical behavior has been investigated using UV–visible absorption and fluorescence spectroscopy. The role of the capping agent, sulfide source concentration, pH and temperature has been studied and discussed. Studies showed that alkaline pH leads to a decrease in the size of quantum dots and reflux temperature above 70 °C resulted in red-shift of emission spectra which is due to narrowing of the bandgap. Further, to reduce the toxicity and photochemical instability of quantum dots, the quantum dots have been functionalized with polyethylene glycol (PEG), which resulted in a 20% enhancement of the fluorescence intensity. The application potential of CdS/T-PEG quantum dots was further studied using gallic acid as a model compound. The sensing is based on fluorescence quenching of quantum dots in the presence of gallic acid, and this study showed linearity in the range from 1.3 × 10 −8 to 46.5 × 10 −8 mM, with a detection limit of 3.6 × 10 −8 mM. (paper)

Development of CIGS2 thin film solar cells

International Nuclear Information System (INIS)

Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

2005-01-01

Research and development of CuIn 1-x Ga x Se 2-y S y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO 2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H 2 S. Presently large (15 cm x 10 cm) CuIn 1-x Ga x S 2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H 2 S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication

Temperature dependent structural, luminescent and XPS studies of CdO:Ga thin films deposited by spray pyrolysis

International Nuclear Information System (INIS)

Moholkar, A.V.; Agawane, G.L.; Sim, Kyu-Ung; Kwon, Ye-bin; Choi, Doo Sun; Rajpure, K.Y.; Kim, J.H.

2010-01-01

Research highlights: → The CdO:Ga thin films seems an alternative to traditional TCO materials used in photovoltaic applications. This work deals the effect of deposition temperature on sprayed CdO:Ga films with respect to the structural, luminescent and XPS studies. → The crystalline quality of the GCO films improves with deposition temperature. → The oxygen vacancies are responsible for n-type conductivity and green emission. → The minimum resistivity, highest carrier concentration and mobility are 1.9 x 10 -4 Ω cm, 11.7 x 10 21 cm -3 and 27.64 cm 2 V -1 s -1 , respectively. - Abstract: The structural, compositional, photoluminescent and XPS properties of CdO:Ga thin films deposited at temperatures ranging from 275 to 350 o C, using spray pyrolysis are reported. X-ray diffraction characterization of as-deposited GCO thin films reveals that films are of cubic structure with a (2 0 0) preferred orientation. The crystalline quality of the GCO films improves and the grain size increases with deposition temperature. The EDS analyses confirm oxygen deficiency present in the film and are responsible for n-type conductivity. The photoluminescence spectra demonstrated that the green emission peaks of CdO thin films are centered at 482 nm. The relative intensity of these peaks is strongly dependent on the deposition temperature. Oxygen vacancies are dominant luminescent centers for green emission in CdO thin films. The XPS measurement shows the presence of Cd, Ga, O and C elements and confirms that CdO:Ga films are cadmium-rich.

A comparative study of the annealing behavior of Cu(In,Ga)(S,Se)2 based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

International Nuclear Information System (INIS)

Hönes, C.; Hackenberg, J.; Zweigart, S.; Wachau, A.; Hergert, F.; Siebentritt, S.

2015-01-01

Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se 2 based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se) 2 based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energy for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects

High mobility transparent conducting oxides for thin film solar cells

International Nuclear Information System (INIS)

Calnan, S.; Tiwari, A.N.

2010-01-01

A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

Metallic behavior of NiS thin film under the structural, optical, electrical and ab initio investigation frameworks

Energy Technology Data Exchange (ETDEWEB)

Boughalmi, R. [Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Rahmani, R. [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique (LPC2ME). Département de physique, Faculté des Sciences, Université d' Oran Es-Sénia, Oran (Algeria); Département de physique, Université des Sciences et de la Technologie d' Oran- Mohamed-Boudiaf, Oran (Algeria); Boukhachem, A., E-mail: abdelwaheb.boukhachem@laposte.net [Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Amrani, B.; Driss-Khodja, K. [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique (LPC2ME). Département de physique, Faculté des Sciences, Université d' Oran Es-Sénia, Oran (Algeria); Amlouk, M. [Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia)

2015-08-01

Nickel sulfide (NiS) thin films were deposited on the glass substrates by spray pyrolysis at 250 °C using an aqueous solution which contains nickel chloride hexahydrate and thiourea as precursors. X-ray diffraction analysis confirms that the hexagonal structure is being part of P6{sub 3}/mmc space group of the deposited films with (100) preferred orientation and lattice parameters a = 3.441 Å and c = 5.320 Å. The optical properties, investigated through transmittance and reflectance measurements reveal that the direct band gap energy (Eg) is around 0.55 eV. The electrical study shows a metallic behavior of the current II-VI binary compound. This behavior regarding NiS II-VI binary sulfide was confirmed by numerical studies based on the density functional theory (DFT) were adopted. The ground state quantities, such as lattice parameter, bulk modulus and its pressure derivative as well as the elastic constants were obtained. The values are consistent with the stability of hexagonal structure. The band structure and the states densities of such material were studied. The results show that there is an agreement between experimental and simulation. - Highlights: • NiS thin films are synthesized by Spray pyrolysis. • NiS is a low band gap compound. • These films have interesting electrical properties showing a metallic behavior. • Computational study confirms the electrical measurements.

Fabrication and characterization of In2S3 thin films deposited by thermal evaporation technique

International Nuclear Information System (INIS)

Timoumi, A.; Bouzouita, H.; Kanzari, M.; Rezig, B.

2005-01-01

Indium sulphide, In 2 S 3 , thin films present an alternative to conventional CdS films as buffer layer for CIS-based thin film solar cells. The objective is to eliminate toxic cadmium for environmental reasons. Indium sulphide is synthesized and deposited by single source vacuum thermal evaporation method on glass substrates. The films are analyzed by X-ray diffraction (XRD) and spectrophotometric measurements. They have a good crystallinity, homogeneity and adhesion. The X-ray diffraction analysis confirmed the initial amorphous nature of the deposited InS film and phase transition into crystalline In 2 S 3 formed upon annealing at free air for 250 deg. C substrate temperature for 2 h. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range of 300-1800 nm. We note that the films annealed at 250 deg. C for 2 h show a good homogeneity with 80% transmission. An analysis of the optical absorption data of the deposited films revealed an optical direct band gap energy in the range of 2.0-2.2 eV

Influence of precursor concentration on physical properties of CdO thin films prepared by spray pyrolysis technique using nebulizer

Energy Technology Data Exchange (ETDEWEB)

Anitha, M.; Amalraj, L.; Anitha, N. [Virudhunagar Hindu Nadar' s Senthikumara Nadar College (Autonomous), Department of Physics, Virudhunagar, Tamilnadu (India)

2017-12-15

Cadmium oxide (CdO) thin films were prepared with different concentrations of precursor solution (0.05, 0.1, 0.15, 0.2 and 0.25 M, respectively) at the optimized temperature (200 C) using the nebulized spray pyrolysis technique to obtain better crystallinity in polycrystalline thin films on amorphous glass substrates. The XRD characterization of those samples revealed a preferential orientation along the (111) plane having a cubic structure. The scanning electron microscopy (SEM) analysis displayed that all the as-deposited thin films have spherical shaped grains. The transmittance of the as-deposited CdO thin films had decreased from 88 to 71% for longer wavelength regions (600-900 nm) as the precursor concentration had increased and then increased for higher precursor concentration. The optical band gap was found to lie between 2.45 and 2.40 eV belonging to direct transition for those thin films. The presence of Cd-O bond (540 cm{sup -1}) was confirmed by FTIR spectrum. The emission properties of CdO thin films were studied by luminescence spectrum recorded at room temperature. A maximum carrier concentration and minimum resistivity values of 4.743 x 10{sup 19} cm{sup -3} and 1.06 x 10{sup -3} Ω-cm, respectively, were obtained for 0.2 M precursor concentration. These CdO thin films have high optical transmittance and high room temperature conductivity, which can be used as the TCO and Solar cell (window layer) material. (orig.)

DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

International Nuclear Information System (INIS)

Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

2007-01-01

An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

Mechanical Characterization of Nanoporous Thin Films by Nanoindentation and Laser-induced Surface Acoustic Waves

Science.gov (United States)

Chow, Gabriel

wavelengths are micrometers in scale whereas indentation depths are usually confined to the nanometer scale. This dissertation demonstrates the effectiveness of LiSAW on both thin porous layers and rough surfaces and shows the challenges faced by nanoindentation on the same films. Zeolite thin films are studied extensively in this work as a model system because of their porous crystalline framework and enormous economic market. Many types of zeolite exist and their widely varying structures and levels of porosity present a unique opportunity for mechanical characterization. For a fully dense ZSM-5 type zeolite with wear and corrosion resistance properties, nanoindentation was used to compare its mechanical properties to industrial chromium and cadmium films. Through tribological and indentation tests, it was shown that the zeolite film possesses exceptional resilience and hardness therefore demonstrating superior wear resistance to chromium and cadmium. This also highlighted the quality of nanoindentation measurements on thick dense layers where traditional nanoindentation excels. Nanoindentation was then performed on porous and non-porous MFI zeolite films with low-k (low dielectric constant) properties. These films were softer and much thinner than the ZSM-5 coatings resulting in significant substrate effects, evidenced by inflation of the measurements from the hard silicon substrate, during indentation. Such effects were avoided with the LiSAW technique on the same films where properties were readily extracted without complications. An alternative indentation analysis method was demonstrated to produce accurate mechanical measurements in line with the LiSAW results, but the non-traditional technique requires substantial computational intensity. Thus LiSAW was proven to be an accurate and efficient means of mechanical characterization for thin porous layers. The case for LiSAW was further supported by utilizing the technique on a porous nanostructured V2O5 electrode film

Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Heisler, Christoph; Brueckner, Michael; Lind, Felix; Kraft, Christian; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array

Energy Technology Data Exchange (ETDEWEB)

Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Li, Yan Tao [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); School of Material Science and Engineering, Henan University of Technology, Zhengzhou 454052 (China); Hu, Chu Xiong [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

2015-09-15

Highlights: • CdS/silicon nanoporous pillar array (CdS/Si-NPA) was prepared by a CBD method. • The PL spectrum of CdS/Si-NPA was measured at different temperatures, from 10 to 300 K. • The PL spectrum was composed of four emission bands, obeying different mechanisms. • The PL degradation with temperature was due to phonon-induced escape of carriers. - Abstract: Si-based cadmium sulfide (CdS) is a prospective semiconductor system in constructing optoelectronic nanodevices, and this makes the study on the factors which may affect its optical and electrical properties be of special importance. Here we report that CdS thin film was grown on Si nanoporous pillar array (Si-NPA) by a chemical bath deposition method, and the luminescent properties of CdS/Si-NPA as well as its mechanism were studied by measuring and analyzing its temperature-dependent photoluminescence (PL) spectrum. The low-temperature measurement disclosed that the PL spectrum of CdS/Si-NPA could be decomposed into four emission bands, a blue band, a green band, a red band and an infrared band. The blue band was due to the luminescence from Si-NPA substrate, and the others originate from the CdS thin film. With temperature increasing, the peak energy, PL intensity and peak profile shape for the PL bands from CdS evolves differently. Through theoretical and fitting analyses, the origins of the green, red and infrared band are attributed to the near band-edge emission, the radiative recombination from surface defects to Cd vacancies and those to S interstitials, respectively. The cause of PL degradation is due to the thermal quenching process, a phonon-induced electron escape but with different activation energies. These results might provide useful information for optimizing the preparing parameters to promote the performance of Si-based CdS optoelectronic devices.

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Rate constant of free electrons and holes recombination in thin films CdSe

International Nuclear Information System (INIS)

Radychev, N.A.; Novikov, G.F.

2006-01-01

Destruction kinetics of electrons generated in thin films CdSe by laser impulse (wave length is 337 nm, period of impulse - 8 nc) is studied by the method of microwave photoconductivity (36 GHz) at 295 K. Model of the process was suggested using the analysis of kinetics of photo-responses decay, and it allowed determination of rate constant of recombination of free electrons and holes in cadmium selenide - (4-6)x10 -11 cm 3 s -1 [ru

Optical and electrical characterizations of nanoparticle Cu2S thin films

International Nuclear Information System (INIS)

Saadeldin, M.; Sawaby, K.; Soliman, H. S.; Ali, H. A. M.

2014-01-01

Copper sulfide thin films are deposited onto different substrates at room temperature using the thermal evaporation technique. X-ray diffraction spectra show that the film has an orthorhombicchalcocite (γ-Cu 2 S) phase. The atomic force microscopy images indicate that the film exhibits nanoparticles with an average size of nearly 44 nm. Specrtophotometric measurements for the transmittance and reflectance are carried out at normal incidence in a spectral wavelength range of 450 nm–2500 nm. The refractive index, n, as well as the absorption index, k is calculated. Some dispersion parameters are determined. The analyses of ε 1 and ε 2 reveal several absorption peaks. The analysis of the spectral behavior of the absorption coefficient, α, in the absorption region reveals direct and indirect allowed transitions. The dark electrical resistivity is studied as a function of film thickness and temperature. Tellier's model is adopted for determining the mean free path and bulk resistance. (condensed matter: structural, mechanical, and thermal properties)

Thin films and nanomaterials

International Nuclear Information System (INIS)

Jayakumar, S.; Kannan, M.D.; Prasanna, S.

2012-01-01

The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

The determination, by differential pulse anodic-stripping voltammetry at the thin mercury-film electrode, of cadmium and thallium in six NIMROC reference materials

International Nuclear Information System (INIS)

Lee, A.F.

1981-01-01

A previously reported procedure has been extended to include the determination of thallium. In samples where thallium occurred in the presence of relatively high concentrations of cadmium, the stripping peak for cadmium was first suppressed with non-ionic surface-active agent, Triton X-100. Cadmium and thallium were determined directly in six NIMROC reference materials without interference from iron(III), in a reducing electrolyte, which is also a complexing agent, consisting of 1 M ammonium chloride, 0,1 M citric acid, and 0,025 M ascorbic acid. Interelement interferences were eliminated by the use of a mercury-film electrode of adequate thickness. The limits of detection for cadmium were 10ng/g and those for thallium 20ng/g

Structure and optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Todorov, R; Pirov, J; Petkov, K [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl.109, 1113 Sofia (Bulgaria); Tsankov, D, E-mail: rossen@clf.bas.bg [Institute of Organic Chemistry with Centre of Phytochemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev St. bl.9, 1113 Sofia (Bulgaria)

2011-08-03

This paper deals with the optical properties of thin As{sub 2}S{sub 3}-In{sub 2}S{sub 3} films. The thin layers were deposited by thermal co-evaporation of As{sub 2}S{sub 3} and In{sub 2}S{sub 3}. The composition of the coatings was controlled by x-ray microanalysis; it was found to be close to the expected one. The refractive index n and optical band gap E{sub g}{sup opt} were calculated from the transmittance and reflectance spectra. The results showed that the refractive index of thin As-S films is not affected by the addition of 1 at% indium and it increases from 2.46 to 2.58 for thin film with 13 at% In. A decrease in the changes in the refractive index, {Delta}n, after exposure to light or annealing with addition of indium in arsenic sulfide is observed. To explain the influence of the indium on the photoinduced changes in the optical properties of thin As-S-In films, the glass structure was investigated by infrared spectroscopy. The calculated values of the optical constants were compared with those obtained from ellipsometric measurements.

Structure, morphology and optical properties of CuInS2 thin films prepared by modulated flux deposition

International Nuclear Information System (INIS)

Guillen, C.; Herrero, J.; Gutierrez, M.T.; Briones, F.

2005-01-01

The structure, morphology and optical properties of copper indium sulfide thin films prepared by a novel modulated flux deposition procedure have been investigated for layers from 200 to 400 nm thickness. These polycrystalline CuInS 2 films grown onto glass substrates showed CuAu-like structure, similar to epitaxial CuInS 2 films grown onto monocrystalline substrates, and direct band gap values Eg=1.52-1.55 eV, optimum for single-junction photovoltaic applications. The increase in the layer thickness leads to growth of the average crystallite size and increases slightly the surface roughness and the absorption coefficient

Nitric oxide-activated hydrogen sulfide is essential for cadmium stress response in bermudagrass (Cynodon dactylon (L). Pers.).

Science.gov (United States)

Shi, Haitao; Ye, Tiantian; Chan, Zhulong

2014-01-01

Nitric oxide (NO) and hydrogen sulfide (H2S) are important gaseous molecules, serving as important secondary messengers in plant response to various biotic and abiotic stresses. However, the interaction between NO and H2S in plant stress response was largely unclear. In this study, endogenous NO and H2S were evidently induced by cadmium stress treatment in bermudagrass, and exogenous applications of NO donor (sodium nitroprusside, SNP) or H2S donor (sodium hydrosulfide, NaHS) conferred improved cadmium stress tolerance. Additionally, SNP and NaHS treatments alleviated cadmium stress-triggered plant growth inhibition, cell damage and reactive oxygen species (ROS) burst, partly via modulating enzymatic and non-enzymatic antioxidants. Moreover, SNP and NaHS treatments also induced the productions of both NO and H2S in the presence of Cd. Interestingly, combined treatments with inhibitors and scavengers of NO and H2S under cadmium stress condition showed that NO signal could be blocked by both NO and H2S inhibitors and scavengers, while H2S signal was specifically blocked by H2S inhibitors and scavengers, indicating that NO-activated H2S was essential for cadmium stress response. Taken together, we assigned the protective roles of endogenous and exogenous NO and H2S in bermudagrass response to cadmium stress, and speculated that NO-activated H2S might be essential for cadmium stress response in bermudagrass. Copyright © 2013 Elsevier Masson SAS. All rights reserved.

Optical and electrical characterization of AgInS{sub 2} thin films deposited by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Calixto-Rodriguez, M., E-mail: manuela@fis.unam.mx [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Martinez, H. [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Calixto, M.E. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apartado Postal J-48, 72570, Puebla, Puebla (Mexico); Pena, Y. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba s/n, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Martinez-Escobar, Dalia [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico); Tiburcio-Silver, A. [Instituto Tecnologico de Toluca-SEP, Apartado Postal 20, 52176, Metepec 3, Estado de Mexico (Mexico); Sanchez-Juarez, A. [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico)

2010-10-25

Silver indium sulfide (AgInS{sub 2}) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (T{sub s}) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS{sub 2} thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS{sub 2}, Ag{sub 2}S, In{sub 2}O{sub 3}, and In{sub 2}S{sub 3} can be grown only by changing the Ag:In:S ratio in the starting solution and T{sub s}. So that, by carefully selecting the deposition parameters, single phase AgInS{sub 2} thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and T{sub s} = 400 {sup o}C, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 {Omega}{sup -1} cm{sup -1} in the dark.

Synthesis of ZnS thin films from aqueous caustic of trisodium citrate and their properties

Directory of Open Access Journals (Sweden)

Martyn A. Sozanskyi

2015-12-01

Full Text Available Zinc sulfide (ZnS thin films due to their properties are widely used in various electronic optical devices. They are produced by several methods, among which – vacuum sublimation, high frequency sputtering method, quasiclosed volume method, sol-gel method, electrodeposition. These methods have high energy consumption which increases the price of ZnS thin films. Aim: The aim of this work is to establish the optimal parameters of the synthesis of ZnS thin films of the aqueous caustic and the correlation between content of zinc in the synthesized films determined by the method of stripping voltammetry and thickness, structural, morphological and optical parameters. Materials and Methods: The ZnS thin films were obtained from aqueous caustics of zinc-containing salt using chemical deposition. Fresh solution of zinc-containing salt, trisodium citrate (Na3C6H5O7 as a complexing agent, thiourea ((NH22CS and ammonium hydroxide (NH4OH was used for the synthesis of ZnS films by chemical deposition. The deposition was performed on prepared glass substrates with the area of 5,76 cm2. Results: The phase mixture of the films has been determined. It showed the presence of ZnS compounds in the cubic modification (sphalerite. Stripping voltammetry was used to determine the mass of zinc in the ZnS films on various conditions of synthesis, namely on the concentration of the initial zinc-containing salt, trisodium citrate, thiourea, deposition time and temperature. The surface morphology, optical properties, the thickness of the ZnS resulting films have been studied. Conclusions: The optimal conditions for the synthesis of ZnS films were found based on these data. Three-dimensional surface morphology of ZnS film studies showed its smoothness, uniformity, integrity and confirmed the correctness of determining the optimal synthesis parameters.

Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

Elucidating doping driven microstructure evolution and optical properties of lead sulfide thin films grown from a chemical bath

Science.gov (United States)

Mohanty, Bhaskar Chandra; Bector, Keerti; Laha, Ranjit

2018-03-01

Doping driven remarkable microstructural evolution of PbS thin films grown by a single-step chemical bath deposition process at 60 °C is reported. The undoped films were discontinuous with octahedral-shaped crystallites after 30 min of deposition, whereas Cu doping led to a distinctly different surface microstructure characterized by densely packed elongated crystallites. A mechanism, based on the time sequence study of microstructural evolution of the films, and detailed XRD and Raman measurements, has been proposed to explain the contrasting microstructure of the doped films. The incorporation of Cu forms an interface layer, which is devoid of Pb. The excess Cu ions in this interface layer at the initial stages of film growth strongly interact and selectively stabilize the charged {111} faces containing either Pb or S compared to the uncharged {100} faces that contain both Pb and S. This interaction interferes with the natural growth habit resulting in the observed surface features of the doped films. Concurrently, the Cu-doping potentially changed the optical properties of the films: A significant widening of the bandgap from 1.52 eV to 1.74 eV for increase in Cu concentration from 0 to 20% was observed, making it a highly potential absorber layer in thin film solar cells.

Biomimetic thin film synthesis

Energy Technology Data Exchange (ETDEWEB)

Graff, G.L.; Campbell, A.A.; Gordon, N.R.

1995-05-01

The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

Fabrication of thin cadmium cylinder coated with aluminum for neutron irradiation capsules

International Nuclear Information System (INIS)

Takeyama, Tomonori; Chiba, Masaaki

2001-03-01

In order to fabricate the irradiation capsule screened thermal neutron, a thin cadmium cylinder coated with aluminum was developed. The capsule is used for the fast neutron irradiation test. Requested specification of the cylinder are the thickness of 5.5 mm, the inner diameter of 23 mm, the length of 750 mm and the coated thickness of aluminum of 0.75 mm. Moreover, cadmium and aluminum adhere to each other. The cylinder was developed and fabricated by means of casting. The a new vacuum chamber in which solving and casting work is possible was fabricated to prevent cadmium oxidation and work safely from poison of cadmium. (author)

Red electroluminescent process excited by hot holes in SrGa2S4:Ce, Mn thin film

International Nuclear Information System (INIS)

Tanaka, Katsu; Okamoto, Shinji

2009-01-01

This paper reports the first observation of red electroluminescence (EL) in SrGa 2 S 4 :Ce, Mn thin film. The EL spectrum consists of single broad emission band having a peak wavelength of 665 nm. The dominant EL decay time was 31 μs. The relationship between the applied voltage and the EL waveform was measured in single insulating thin film electroluminescent (TFEL) devices. An asymmetric EL waveform was observed in SrGa 2 S 4 :Ce, Mn TFEL devices under a rectangular applied voltage. The polarity of the EL waveform in these devices was different from the waveform in manganese-activated zinc sulfide ZnS:Mn devices. This indicates that hot holes excite the Mn 2+ ions to cause the red EL.

Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov (United States)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing

International Nuclear Information System (INIS)

Lugo, S.; Peña, Y.; Calixto-Rodriguez, M.; López-Mata, C.; Ramón, M.L.; Gómez, I.; Acosta, A.

2012-01-01

Highlights: ► We obtained polycrystalline silver indium sulfide thin films through the annealing of chemically deposited In 2 S 3 –Ag 2 S films. ► According to XRD chalcopyrite structure of AgInS 2 was obtained. ► AgInS 2 thin film has a band gap of 1.86 eV and a conductivity value of 1.2 × 10 −3 (Ω cm) −1 . - Abstract: AgInS 2 thin films were obtained by the annealing of chemical bath deposited In 2 S 3 –Ag 2 S layers at 400 °C in N 2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS 2 has been obtained. These films have an optical band gap, E g , of 1.86 eV and an electrical conductivity value of 1.2 × 10 −3 (Ω cm) −1 .

Thin Film & Deposition Systems (Windows)

Data.gov (United States)

Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

Characterization of organic thin films

CERN Document Server

Ulman, Abraham; Evans, Charles A

2009-01-01

Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

S Sensors: Fumarate-Based fcu-MOF Thin Film Grown on a Capacitive Interdigitated Electrode

KAUST Repository

Yassine, Omar

2016-10-31

Herein we report the fabrication of an advanced sensor for the detection of hydrogen sulfide (H2S) at room temperature, using thin films of rare-earth metal (RE)-based metal-organic framework (MOF) with underlying fcu topology. This unique MOF-based sensor is made via the insitu growth of fumarate-based fcu-MOF (fum-fcu-MOF) thin film on a capacitive interdigitated electrode. The sensor showed a remarkable detection sensitivity for H2S at concentrations down to 100ppb, with the lower detection limit around 5ppb. The fum-fcu-MOF sensor exhibits a highly desirable detection selectivity towards H2S vs. CH4, NO2, H2, and C7H8 as well as an outstanding H2S sensing stability as compared to other reported MOFs. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preparation of nanostructured PbS thin films as sensing element for NO{sub 2} gas

Energy Technology Data Exchange (ETDEWEB)

Kaci, S., E-mail: k_samira05@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE) Division Couches Minces et Interfaces, 02 Bd Frantz Fanon, B.P. 140, 7 Merveilles, 16038 Algiers (Algeria); Keffous, A.; Hakoum, S. [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE) Division Couches Minces et Interfaces, 02 Bd Frantz Fanon, B.P. 140, 7 Merveilles, 16038 Algiers (Algeria); Trari, M. [Université des Sciences et Technologies Houari Boumediene (USTHB), Laboratoire de Stockage et de Valorisation des Eneriges Renouvelables, Faculté de Chimie, BP 32, EL Alia, 16111 Bab Ezzouar, Algiers (Algeria); Mansri, O.; Menari, H. [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE) Division Couches Minces et Interfaces, 02 Bd Frantz Fanon, B.P. 140, 7 Merveilles, 16038 Algiers (Algeria)

2014-06-01

In this work, we demonstrate that semiconducting films of A{sub IV}B{sub VI} compounds, in particular, of nanostructured lead sulfide (PbS) which prepared by chemical bath deposition (CBD), can be used as a sensing element for nitrogen dioxide (NO{sub 2}) gas. The CBD method is versatile, simple in implementation and gives homogeneous semiconductor structures. We have prepared PbS nanocrystalline thin film at different reaction baths and temperatures. In the course of deposition, variable amounts of additives, such as organic substances among them, were introduced into the baths. The energy dispersive analysis (EDX) confirms the chemical composition of PbS films. A current–voltage (I–V) characterization of Pd/nc-PbS/a-SiC:H pSi(100)/Al Schottky diode structures were studied in the presence of NO{sub 2} gas. The gas sensing behavior showed that the synthesized PbS nanocrystalline thin films were influenced by NO{sub 2} gas at room temperature. The results can be used for developing an experimental sensing element based on chemically deposited nanostructured PbS films which can be applicable in gas sensors.

CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

2015-01-01

In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

Growing Cu2S Thin Films by Exposing a Copper Substrate to Gas-Phase Products of Brown Coal Hydrothermal Desulfurization

Science.gov (United States)

Savitskii, D. P.; Stanishevskii, Ya. M.

2018-01-01

Thin films of copper(I) sulfide (Cu2S) are synthesized on a copper substrate by exposing it to vapor-phase sulfur-containing products resulting from the hydrothermal desulfurization of brown coal. The synthesized 0.1-mm-thick films have grain sizes in the range of 10‒20 μm, electrical resistivity ρ = 0.92 Ω cm at T = 300 K, and bang gap E g = 1.91 eV. The roughness of the films, in terms of the arithmetic mean deviation of the assessed profile, is R a = 2.46 μm.

Structural studies of thin films of semiconducting nanoparticles in polymer matrices

International Nuclear Information System (INIS)

Di Luccio, Tiziana; Piscopiello, Emanuela; Laera, Anna Maria; Antisari, Marco Vittori

2007-01-01

Ordered films of nanoscale materials are issue of wide interest for applications in several fields, such as optics, catalysis, and bioelectronics. In particular, semiconducting nanoparticles incorporation in a processable polymer film is an easy way to manipulate such materials for their application. We deposited thin layers of cadmium sulphide (CdS) and zinc sulphide (ZnS) nanoparticles embedded in a thermoplastic cyclo-olephin copolymer (COC) with elevated optical transparency and highly bio-compatible. The nanoparticles were obtained by thiolate precursors previously dispersed in the polymer upon thermal treatment at temperatures ranging between 200 and 300 deg. C depending on the desired size. The precursor/polymer solutions were spin-coated in order to get thin films. The spinning conditions were changed in order to optimise the layer thickness and uniformity. The samples were mainly characterised by X-ray reflectivity (XRR) and by high-resolution transmission electron microscopy (HRTEM) analyses. The thinnest layer we have deposited is 8 nm thick, as evaluated by XRR. The HRTEM measurements showed that the nanoparticles have quasi-spherical shape without evident microstructural defects. The size of the nanoparticles depends on the annealing temperature, e.g. at 232 deg. C the size of the CdS nanoparticles is about 4-5 nm

Structural studies of thin films of semiconducting nanoparticles in polymer matrices

Energy Technology Data Exchange (ETDEWEB)

Di Luccio, Tiziana [ENEA, Centro Ricerche Brindisi, SS7 Appia Km 706, I-72100 Brindisi (Italy)], E-mail: tiziana.diluccio@portici.enea.it; Piscopiello, Emanuela; Laera, Anna Maria [ENEA, Centro Ricerche Brindisi, SS7 Appia Km 706, I-72100 Brindisi (Italy); Antisari, Marco Vittori [ENEA, Centro Ricerche Casaccia, Via Anguillarese 301, I-00060 S. Maria di Galeria (Roma) (Italy)

2007-09-15

Ordered films of nanoscale materials are issue of wide interest for applications in several fields, such as optics, catalysis, and bioelectronics. In particular, semiconducting nanoparticles incorporation in a processable polymer film is an easy way to manipulate such materials for their application. We deposited thin layers of cadmium sulphide (CdS) and zinc sulphide (ZnS) nanoparticles embedded in a thermoplastic cyclo-olephin copolymer (COC) with elevated optical transparency and highly bio-compatible. The nanoparticles were obtained by thiolate precursors previously dispersed in the polymer upon thermal treatment at temperatures ranging between 200 and 300 deg. C depending on the desired size. The precursor/polymer solutions were spin-coated in order to get thin films. The spinning conditions were changed in order to optimise the layer thickness and uniformity. The samples were mainly characterised by X-ray reflectivity (XRR) and by high-resolution transmission electron microscopy (HRTEM) analyses. The thinnest layer we have deposited is 8 nm thick, as evaluated by XRR. The HRTEM measurements showed that the nanoparticles have quasi-spherical shape without evident microstructural defects. The size of the nanoparticles depends on the annealing temperature, e.g. at 232 deg. C the size of the CdS nanoparticles is about 4-5 nm.

Design and characterization of sulfide-modified nanoscale zerovalent iron for cadmium(II) removal from aqueous solutions

Science.gov (United States)

Lv, Dan; Zhou, Xiaoxin; Zhou, Jiasheng; Liu, Yuanli; Li, Yizhou; Yang, Kunlun; Lou, Zimo; Baig, Shams Ali; Wu, Donglei; Xu, Xinhua

2018-06-01

Nanoscale zero-valent iron (nZVI) has high removal efficiency and strong reductive ability to organic and inorganic contaminants, but concerns over its stability and dispersity limit its application. In this study, nZVI was modified with sulfide to enhance Cd(II) removal from aqueous solutions. TEM and SEM analyses showed that sulfide-modified nZVI (S-nZVI) had a core-shell structure of nano-sized spherical particles, and BET results proved that sulfide modification doubled the specific surface area from 26.04 to 50.34 m2 g-1 and inhibited the aggregation of nZVI. Mechanism analysis indicated that Cd(II) was immobilized through complexation and precipitation. Cd(II) removal rate on nZVI was only 32% in 2 h, while complete immobilization could be achieved in 15 min on S-nZVI, and S-nZVI with an optimal S/Fe molar ratio of 0.3 offered a cadmium removal capacity of about 150 mg g-1 at pH 7 and 303 K. The process of Cd(II) immobilization on S-nZVI was fitted well with pseudo-second-order kinetic model, and the increase of temperature favored Cd(II) immobilization, suggesting an endothermic process. The presence of Mg2+ and Ca2+ hindered Cd(II) removal while Cu2+ did the opposite, which led to the order as Cu2+ > control > Mg2+ > Ca2+. The removal rate of 20 mg L-1 Cd(II) maintained a high level with the fluctuation of environmental conditions such as pH, ion strength and presence of HA. This study demonstrated that S-nZVI could be a promising adsorbent for Cd(II) immobilization from cadmium-contaminated water.

Defect characterization of CdTe thin films using a slow positron beam

International Nuclear Information System (INIS)

Neretina, S.; Grebennikov, D.; Mascher, P.; Hughes, R.A.; Weber, M.; Lynn, K.G.; Simpson, P.J.; Preston, J.S.

2007-01-01

Cadmium Telluride (CdTe) is the most well established II-VI compound largely due to its use as a photonic material. Existing applications, as well as those under consideration, are demanding increasingly stringent control of the material properties. The deposition of high quality thin films is of the utmost importance to such applications. In this regard, we present a report detailing the role of lattice mismatch in determining the film quality. Thin films were deposited on a wide variety of substrate materials using the pulsed laser deposition technique. Common to all substrates was the strong tendency towards the preferential alignment of CdTe's (111) planes parallel to the substrate's surface. X-ray diffraction analysis, however, revealed that the crystalline quality varied dramatically depending upon the substrate used with the best results yielding a single crystal film. This tendency also manifested itself in the surface morphology with higher structural perfection yielding smoother surfaces. Slow positron beam techniques revealed a strong correlation between the defect concentration and the degree of structural perfection. Simulations of the data using the POSTRAP 5 program were used to calculate the defect concentration in relative (atom -1 ) and absolute units and to determine the diffusion lengths of the positrons in the film. All of these characterization techniques point towards lattice mismatch as being the dominant mechanism in determining the quality of CdTe films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Self-Limited Growth in Pentacene Thin Films.

Science.gov (United States)

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

Alcohol vapor sensing by cadmium-doped zinc oxide thick films based chemical sensor

Science.gov (United States)

Zargar, R. A.; Arora, M.; Chackrabarti, S.; Ahmad, S.; Kumar, J.; Hafiz, A. K.

2016-04-01

Cadmium-doped zinc oxide nanoparticles were derived by simple chemical co-precipitation route using zinc acetate dihydrate and cadmium acetate dihydrate as precursor materials. The thick films were casted from chemical co-precipitation route prepared nanoparticles by economic facile screen printing method. The structural, morphological, optical and electrical properties of the film were characterized relevant to alcohol vapor sensing application by powder XRD, SEM, UV-VIS and DC conductivity techniques. The response and sensitivity of alcohol (ethanol) vapor sensor are obtained from the recovery curves at optimum working temperature range from 20∘C to 50∘C. The result shows that maximum sensitivity of the sensor is observed at 25∘C operating temperature. On varying alcohol vapor concentration, minor variation in resistance has been observed. The sensing mechanism of sensor has been described in terms of physical adsorption and chemical absorption of alcohol vapors on cadmium-doped zinc oxide film surface and inside film lattice network through weak hydrogen bonding, respectively.

High quality antireflective ZnS thin films prepared by chemical bath deposition

International Nuclear Information System (INIS)

Tec-Yam, S.; Rojas, J.; Rejón, V.; Oliva, A.I.

2012-01-01

Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl 2 , NH 4 NO 3 , and CS(NH 2 ) 2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: ► High quality ZnS thin films were prepared by chemical bath deposition (CBD). ► Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. ► Reduction in the reflectance was obtained for ZnS films used as buffer layers.

Magnetic field and temperature dependent measurements of hall coefficient in thermal evaporated Tin-Doped Cadmium Oxide Thin films

International Nuclear Information System (INIS)

Hamadi, O.; Shakir, N.; Mohammed, F.

2010-01-01

CdO:Sn thin films are deposited onto glass substrates by thermal evaporation under vacuum. The studied films are polycrystalline and have an NaCl structure. The Hall effect is studied for films with different thickness as substrates are maintained at different temperatures. The temperature dependence of the Hall mobility is also investigated. (authors)

Substrate dependent physical properties of evaporated CdO thin films for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Purohit, Anuradha; Chander, S.; Patel, S.L. [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India); Rangra, K.J. [Sensors and Transducers Group, CSIR-CEERI, Pilani-333031 (India); Dhaka, M.S., E-mail: msdhaka75@yahoo.co.in [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India)

2017-06-15

Highlights: • Substrate dependent physical properties of CdO thin films are carried out. • XRD patterns reveal that the films have cubic structure of space group Fm3m. • Optical direct band gap is found to vary with the substrates. • SEM images show that the films are compact and homogeneous. • I–V characteristics show ohmic behavior of the deposited CdO films. - Abstract: In this study, CdO thin films were grown by e-beam evaporation technique on glass, indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and silicon (Si) wafer. The deposited films were analyzed by X-ray diffraction (XRD), UV–Vis spectrophotometer, scanning electron microscopy, energy dispersive spectroscopy (EDS) and source meter (current–voltage) for structural, optical, surface morphological, elemental and electrical analysis, respectively. The films have single phase of cubic structure (space group Fm3m) with (200) preferred orientation. The structural parameters viz. inter-planar spacing, grain size, lattice constant, internal strain and dislocation density are calculated and found to vary with the nature of the substrates. The optical band gap was found in the range 2.24–3.95 eV and strongly dependents on the substrates. The SEM analysis shows that the films are compact, homogeneous and have granular structure without any defects like pin holes and cracks. The EDS spectra confirmed the presence of cadmium (Cd) and oxygen (O) in the films deposited on different substrates. The current–voltage characteristics of the films show ohmic behavior.

A comparative study of the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

Energy Technology Data Exchange (ETDEWEB)

Hönes, C., E-mail: christian.hoenes@de.bosch.com [Corporate Research and Advance Engineering, Robert Bosch GmbH, Robert-Bosch-Straße 2, D-71701 Schwieberdingen (Germany); Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux (Luxembourg); Hackenberg, J. [Corporate Research and Advance Engineering, Robert Bosch GmbH, Robert-Bosch-Straße 2, D-71701 Schwieberdingen (Germany); Zweigart, S. [Corporate Research and Advance Engineering, Robert Bosch GmbH, Postfach 10 60 50, D-70049 Stuttgart (Germany); Wachau, A.; Hergert, F. [Bosch Solar CISTech GmbH, D-14772 Brandenburg (Germany); Siebentritt, S., E-mail: susanne.siebentritt@uni.lu [Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux (Luxembourg)

2015-03-07

Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se{sub 2} based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energy for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects.

Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

Directory of Open Access Journals (Sweden)

Claudio Davet Gutiérrez-Lazos

2014-06-01

Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

Processing and Characterization of Thin Cadmium Telluride Solar Cells

Science.gov (United States)

Wojtowicz, Anna

Cadmium telluride (CdTe) has the highest theoretical limit to conversion efficiency of single-junction photovoltaic (PV) technologies today. However, despite a maximum theoretical open-circuit voltage of 1.20 V, record devices have historically had voltages pinned around only 900 mV. Voltage losses due to high recombination rates remains to be the most complex hurdle to CdTe technology today, and the subject of on-going research in the physics PV group at Colorado State University. In this work, an ultrathin CdTe device architecture is proposed in an effort to reduce bulk recombination and boost voltages. By thinning the CdTe layer, a device's internal electric field extends fully towards the back contact. This quickly separates electrons-hole pairs throughout the bulk of the device and reduces overall recombination. Despite this advantage, very thin CdTe layers also present a unique set of optical and electrical challenges which result in performance losses not as prevalent in thicker devices. When fabricating CdTe solar cells, post-deposition treatments applied to the absorber layer are a critical step for achieving high efficiency devices. Exposure of the polycrystalline CdTe film to a chlorine species encourages the passivation of dangling bonds and larger grain formation, while copper-doping improves device uniformity and voltages. This work focuses on experiments conducted via close-space sublimation to optimize CdCl2 and CuCl treatments for thin CdTe solar cells. Sweeps of both exposure and anneal time were performed for both post-deposition treatments on CdTe devices with 1.0 mum absorber layers. The results demonstrate that thin CdTe devices require substantially less post-deposition processing than standard thicker devices as expected. Additionally, the effects of CdTe growth temperature on thin devices is briefly investigated. The results suggest that higher growth temperatures lead to both electrical and stoichiometric changes in CdTe closely associated

Non-toxic and environmentally friendly route for preparation of copper indium sulfide based thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Sankir, Nurdan Demirci, E-mail: nsankir@etu.edu.tr; Aydin, Erkan; Ugur, Esma; Sankir, Mehmet

2015-08-15

Highlights: • Substrate structure of spray pyrolyzed CuInS{sub 2}/In{sub 2}S{sub 3} heterojunction solar cells. • Low cost and environmentally friendly fabrication of CuInS{sub 2} based solar cells. • Low RF power deposition of TCO layer. • AZO–Ag–AZO sandwich structure. • Effect of the thickness of buffer layer on the photovoltaic performance. - Abstract: In this study, copper based thin film solar cells with substrate structure have been built via spray pyrolysis method. Toxic material usage was avoided during the material deposition and the post-treatment steps. Novel device configuration of Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO was studied as a function of the In{sub 2}S{sub 3} buffer layer thickness. In order to utilize the zinc oxide (ZnO) and aluminum doped zinc oxide (AZO) transparent conductive layers, deposited by physical vapor deposition (PVD), on top of the spray pyrolyzed thin films, the RF power was lowered to 30 W. Although this minimized the unwanted penetration of the highly energetic particles, created during PVD process, sheet resistivity of the AZO films increased enormously. Hence very thin silver layer has been deposited between two AZO films. This resulted the decrease in the sheet resistivity more than 10{sup 6} times. Electrical measurements under illumination revealed that short circuit current density (J{sub sc}), open circuit voltage (V{sub oc}), fill factor (FF) and efficiency (η) of the Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO type solar cells increased with increasing the thickness of the In{sub 2}S{sub 3} layer. The maximum J{sub sc} of 9.20 mA/cm{sup 2}, V{sub oc} of 0.43 V, FF of 0.44 have been observed for the 0.94 μm-thick In{sub 2}S{sub 3} layer. Extraordinarily thick buffer layer provided better diffusion barrier between the absorber and the TCO layers and also resulted better photosensitivity. These could be the key factors to produce substrate configuration of the spray pyrolyzed

Thin films for precision optics

International Nuclear Information System (INIS)

Araujo, J.F.; Maurici, N.; Castro, J.C. de

1983-01-01

The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

Analysis of Hard Thin Film Coating

Science.gov (United States)

Shen, Dashen

1998-01-01

MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Thin-film solar cell

NARCIS (Netherlands)

Metselaar, J.W.; Kuznetsov, V.I.

1998-01-01

The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

Nanocrystal thin film fabrication methods and apparatus

Science.gov (United States)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

2018-01-09

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Optical properties of Cd Se thin films obtained by pyrolytic dew; Propiedades opticas de peliculas delgadas de CdSe obtenidas por rocio pirolitico

Energy Technology Data Exchange (ETDEWEB)

Perez G, A.M. [UPAEP, 72160 Puebla (Mexico); Tepantlan, C.S. [UPT, 43626 Tulancingo, Hidalgo (Mexico); Renero C, F. [INAOE, 72840 Puebla (Mexico)

2006-07-01

In this paper the optical properties of Cd Se thin films obtained by spray pyrolysis are presented. The films are prepared by Sodium Seleno sulphate (Na{sub 2}SSeO{sub 3}) and Cadmium Chloride (CdC{sub 12}) mixing in aqueous environment. Optical parameters of the films (refractive index, absorption coefficient and optical ban gap) were calculated from transmittance spectra. The obtained values of the optical ban gap are compared with the result obtained by other deposition method. (Author)

Boron-doped cadmium oxide composite structures and their electrochemical measurements

Energy Technology Data Exchange (ETDEWEB)

Lokhande, B.J., E-mail: bjlokhande@yahoo.com [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Ambare, R.C. [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Mane, R.S. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India); Bharadwaj, S.R. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2013-08-01

Graphical abstract: Conducting nano-fibrous 3% boron doped cadmium oxide thin films were prepared by SILAR and its super capacitive properties were studied. - Highlights: • Samples are of nanofibrous nature. • All samples shows pseudocapacitive behavior. • 3% B doped CdO shows good specific capacitance. • 3% B doped CdO shows maximum 74.93% efficiency at 14 mA/cm{sup 2}. • 3% B doped CdO shows 0.8 Ω internal resistance. - Abstract: Boron-doped and undoped cadmium oxide composite nanostructures in thin film form were prepared onto stainless steel substrates by a successive ionic layer adsorption and reaction method using aqueous solutions of cadmium nitrate, boric acid and 1% H{sub 2}O{sub 2}. As-deposited films were annealed at 623 K for 1 h. The X-ray diffraction study shows crystalline behavior for both doped and undoped films with a porous topography and nano-wires type architecture, as observed in SEM image. Wettability test confirms the hydrophilic surface with 58° contact angle value. Estimated band gap energy is around 1.9 eV. Electrochemical behavior of the deposited films is attempted in 1 M KOH electrolyte using cyclic voltammetry (CV), electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Maximum values of the specific capacitance, specific energy and specific power obtained for 3% B doped CdO film at 2 mV/s scan rate are 20.05 F/g, 1.22 Wh/kg and 3.25 kW/kg, respectively.

Characterizations of photoconductivity of graphene oxide thin films

Directory of Open Access Journals (Sweden)

Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique

International Nuclear Information System (INIS)

Chattopadhyay, P.; Karim, B.; Guha Roy, S.

2013-01-01

The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material

On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique

Science.gov (United States)

Chattopadhyay, P.; Karim, B.; Guha Roy, S.

2013-12-01

The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material.

Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

Science.gov (United States)

Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

2018-05-01

In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

Development of neutron diffuse scattering analysis code by thin film and multilayer film

International Nuclear Information System (INIS)

Soyama, Kazuhiko

2004-01-01

To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

Thin film tritium dosimetry

Science.gov (United States)

Moran, Paul R.

1976-01-01

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Thin films for emerging applications v.16

CERN Document Server

Francombe, Maurice H

1992-01-01

Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

Interfaces and thin films physics

International Nuclear Information System (INIS)

Equer, B.

1988-01-01

The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

Buckling of Thin Films in Nano-Scale

Directory of Open Access Journals (Sweden)

Li L.A.

2010-06-01

Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

International Nuclear Information System (INIS)

Laatar, F.; Harizi, A.; Smida, A.; Hassen, M.; Ezzaouia, H.

2016-01-01

Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E_o), dispersion energy (E_d), and static refractive index (n_o) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ_e) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

Temperature dependence of LRE-HRE-TM thin films

Science.gov (United States)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Physical properties of chemically deposited Bi{sub 2}S{sub 3} thin films using two post-deposition treatments

Energy Technology Data Exchange (ETDEWEB)

Moreno-García, H., E-mail: hamog@ier.unam.mx [Instituto de Ciencias Físicas, Laboratorio de espectroscopia, Universidad Nacional Autónoma de México, Apartado Postal 48-3, C.P. 62210 Cuernavaca, Morelos (Mexico); Messina, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63155 Tepic, Nayarit (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Martínez, H. [Instituto de Ciencias Físicas, Laboratorio de espectroscopia, Universidad Nacional Autónoma de México, Apartado Postal 48-3, C.P. 62210 Cuernavaca, Morelos (Mexico)

2014-08-30

Highlights: • The post-deposition treatment by Ar plasma is a viable alternative to enhance the optical, electrical, morphological and structural properties of Bi{sub 2}S{sub 3} semiconductor thin films. • The plasma treatment avoids the loss in thickness of the chemically deposited Bi{sub 2}S{sub 3} thin films. • The E{sub g} values were 1.60 eV for the thermally annealed samples and 1.56 eV for the Ar plasma treated samples. • The highest value obtained for the electrical conductivity was 7.7 × 10{sup −2} (Ω cm){sup −1} in plasma treated samples. - Abstract: As-deposited bismuth sulfide (Bi{sub 2}S{sub 3}) thin films prepared by chemical bath deposition technique were treated with thermal annealed in air atmosphere and argon AC plasma. The as-deposited, thermally annealing and plasma treatment Bi{sub 2}S{sub 3} thin films have been characterized by X-ray diffraction (XRD) analysis, atomic force microscopy analysis (AFM), transmission, specular reflectance and electrical measurements. The structural, morphological, optical and electrical properties of the films are compared. The XRD analysis showed that both post-deposition treatments, transform the thin films from amorphous to a crystalline phase. The atomic force microscopy (AFM) measurement showed a reduction of roughness for the films treated in plasma. The energy band gap value of the as-prepared film was E{sub g} = 1.61 eV, while for the film thermally annealed was E{sub g} = 1.60 eV and E{sub g} = 1.56 eV for film treated with Plasma. The electrical conductivity under illumination of the as-prepared films was 3.6 × 10{sup −5} (Ω cm){sup −1}, whereas the conductivity value for the thermally annealed films was 2.0 × 10{sup −3} (Ω cm){sup −1} and for the plasma treated films the electrical conductivity increases up to 7.7 × 10{sup −2} (Ω cm){sup −1}.

Long-Wave Infrared (LWIR) Molecular Laser-Induced Breakdown Spectroscopy (LIBS) Emissions of Thin Solid Explosive Powder Films Deposited on Aluminum Substrates.

Science.gov (United States)

Yang, Clayton S-C; Jin, Feng; Trivedi, Sudhir B; Brown, Ei E; Hommerich, Uwe; Tripathi, Ashish; Samuels, Alan C

2017-04-01

Thin solid films made of high nitro (NO 2 )/nitrate (NO 3 ) content explosives were deposited on sand-blasted aluminum substrates and then studied using a mercury-cadmium-telluride (MCT) linear array detection system that is capable of rapidly capturing a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared region (LWIR; ∼5.6-10 µm). Despite the similarities of their chemical compositions and structures, thin films of three commonly used explosives (RDX, HMX, and PETN) studied in this work can be rapidly identified in the ambient air by their molecular LIBS emission signatures in the LWIR region. A preliminary assessment of the detection limit for a thin film of RDX on aluminum appears to be much lower than 60 µg/cm 2 . This LWIR LIBS setup is capable of rapidly probing and charactering samples without the need for elaborate sample preparation and also offers the possibility of a simultaneous ultraviolet visible and LWIR LIBS measurement.

Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production

Science.gov (United States)

Lany, Stephan

2016-06-07

Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula Sn.sub.1-x(R).sub.xS, where R is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.

Processing of Copper Zinc Tin Sulfide Nanocrystal Dispersions for Thin Film Solar Cells

Science.gov (United States)

Williams, Bryce Arthur

A scalable and inexpensive renewable energy source is needed to meet the expected increase in electricity demand throughout the developed and developing world in the next 15 years without contributing further to global warming through CO2 emissions. Photovoltaics may meet this need but current technologies are less than ideal requiring complex manufacturing processes and/or use of toxic, rare-earth materials. Copper zinc tin sulfide (Cu 2ZnSnS4, CZTS) solar cells offer a true "green" alternative based upon non-toxic and abundant elements. Solution-based processes utilizing CZTS nanocrystal dispersions followed by high temperature annealing have received significant research attention due to their compatibility with traditional roll-to-roll coating processes. In this work, CZTS nanocrystal (5-35 nm diameters) dispersions were utilized as a production pathway to form solar absorber layers. Aerosol-based coating methods (aerosol jet printing and ultrasonic spray coating) were optimized for formation of dense, crack-free CZTS nanocrystal coatings. The primary variables underlying determination of coating morphology within the aerosol-coating parameter space were investigated. It was found that the liquid content of the aerosol droplets at the time of substrate impingement play a critical role. Evaporation of the liquid from the aerosol droplets during coating was altered through changes to coating parameters as well as to the CZTS nanocrystal dispersions. In addition, factors influencing conversion of CZTS nanocrystal coatings into dense, large-grained polycrystalline films suitable for solar cell development during thermal annealing were studied. The roles nanocrystal size, carbon content, sodium uptake, and sulfur pressure were found to have pivotal roles in film microstructure evolution. The effects of these parameters on film morphology, grain growth rates, and chemical makeup were analyzed from electron microscopy images as well as compositional analysis

Application-related properties of giant magnetostrictive thin films

International Nuclear Information System (INIS)

Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

2002-01-01

In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire

Energy Technology Data Exchange (ETDEWEB)

Douglass, K.; Hunt, S. [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Teplyakov, A., E-mail: andrewt@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Opila, R.L. [Department of Material Science and Engineering, University of Delaware, Newark, DE 19716 (United States)

2010-12-15

Surface preparation procedures for indium gallium nitride (InGaN) thin films were analyzed for their effectiveness for carbon and oxide removal as well as for the resulting surface roughness. Aqua regia (3:1 mixture of concentrated hydrochloric acid and concentrated nitric acid, AR), hydrofluoric acid (HF), hydrochloric acid (HCl), piranha solution (1:1 mixture of sulfuric acid and 30% H{sub 2}O{sub 2}) and 1:9 ammonium sulfide:tert-butanol were all used along with high temperature anneals to remove surface contamination. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were utilized to study the extent of surface contamination and surface roughness, respectively. The ammonium sulfide treatment provided the best overall removal of oxygen and carbon. Annealing over 700 deg. C after a treatment showed an even further improvement in surface contamination removal. The piranha treatment resulted in the lowest residual carbon, while the ammonium sulfide treatment leads to the lowest residual oxygen. AFM data showed that all the treatments decreased the surface roughness (with respect to as-grown specimens) with HCl, HF, (NH{sub 4}){sub 2}S and RCA procedures giving the best RMS values ({approx}0.5-0.8 nm).

Effect of tri-sodium citrate concentration on structural, optical and electrical properties of chemically deposited tin sulfide films

Energy Technology Data Exchange (ETDEWEB)

Gode, F., E-mail: ftmgode@gmail.com [Department of Physics, Mehmet Akif Ersoy University, 15030 Burdur (Turkey); Guneri, E. [Department of Primary Education, Erciyes University, 38039 Kayseri (Turkey); Baglayan, O. [Department of Physics, Anadolu University, 26470 Eskisehir (Turkey)

2014-11-01

Graphical abstract: - Highlights: • SnS thin films grown by CBD in different concentration of tri-sodium citrate. • Grain size increases, while surface roughness decreases, with concentration. • Optical band gap decreases from 1.40 eV to 1.17 eV with increasing concentration. • Electrical conductivity improves with increasing concentration. - Abstract: Tin sulfide thin films were deposited onto glass substrates by chemical bath deposition. The effects of molar concentration of the complexing agent, tri-sodium citrate, on the structural, morphological, optical and electrical properties of the films were investigated. The films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and Hall effect measurements. Polycrystalline film structure in orthorhombic phase was determined. Flower-like spherical grains are observed on the surface. While their average size increased from 345 nm to 750 nm when the tri-sodium citrate concentration was increased from 6.4 × 10{sup −3} M to 8.0 × 10{sup −3} M, the surface roughness varied in an opposite manner from approximately 120.18 nm to 29.36 nm. For these concentrations, optical band gap of the films decreased from 1.40 eV to 1.17 eV, whereas the Hall conductivity, mobility and carrier concentration of the films increased slightly from 5.91 × 10{sup −5} to 8.78 × 10{sup −5} (Ω cm){sup −1}, from 148 to 228 cm{sup 2} V{sup −1} s{sup −1} and from 1.73 × 10{sup 12} to 3.59 × 10{sup 12} cm{sup −1}, respectively.

Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

P-type CuxS thin films: Integration in a thin film transistor structure

International Nuclear Information System (INIS)

Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

2013-01-01

Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

Semiconductor-nanocrystal/conjugated polymer thin films

Science.gov (United States)

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2014-06-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Electrodeposition and characterization of CdSe{sub x}Te{sub 1-x} semiconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [Faculty of Sciences, Laboratory of Materials Physics, Dept. of Physics, Rabat (Morocco)

1999-07-01

Thin polycrystalline films of cadmium chalcogenides CdSe{sub x}Te{sub 1-x} (0{<=}x{<=}1) can be used for various technical applications in particular for the conversion of solar energy in photoelectrochemical devices. They have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 deg. C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe{sub x}Te{sub 1-x} films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

Thin liquid films dewetting and polymer flow

CERN Document Server

Blossey, Ralf

2012-01-01

This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

Self-assembly of dodecaphenyl POSS thin films

Science.gov (United States)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Dye sensitized solar cell applications of CdTiO{sub 3}–TiO{sub 2} composite thin films deposited from single molecular complex

Energy Technology Data Exchange (ETDEWEB)

Ehsan, Muhammad Ali [Nanotechnology and Catalysis Centre (NANOCAT), University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Khaledi, Hamid [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Pandikumar, Alagarsamy; Huang, Nay Ming [Department of Physics, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Arifin, Zainudin [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Mazhar, Muhammad, E-mail: mazhar42pk@yahoo.com [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia)

2015-10-15

A heterobimetallic complex [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO{sub 3}–TiO{sub 2} composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO{sub 3}–TiO{sub 2} composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application. - Graphical abstarct: Microspherical designed CdTiO{sub 3}–TiO{sub 2} composite oxides photoanode film has been fabricated from single source precursor [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF via aerosol assisted chemical vapor deposition technique for dye sensitized solar cell application. - Highlights: • Synthesis and characterization of a heterobimetallic Cd–Ti complex. • Fabrication of CdTiO{sub 3}–TiO{sub 2} thin film photoelectrode. • Application as dye sensitized photoanode for solar application.

Organic thin films and surfaces directions for the nineties

CERN Document Server

Ulman, Abraham

1995-01-01

Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

Zn{sub x}Cd{sub 1-} {sub x}S as a heterojunction partner for CuIn{sub 1-x}Ga{sub x}S{sub 2} thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Kumar, Bhaskar [Florida Solar Energy Center, University of Central Florida, Cocoa, FL 32922 (United States); Vasekar, Parag [Florida Solar Energy Center, University of Central Florida, Cocoa, FL 32922 (United States)], E-mail: psvasekar@yahoo.com; Pethe, Shirish A.; Dhere, Neelkanth G. [Florida Solar Energy Center, University of Central Florida, Cocoa, FL 32922 (United States); Koishiyev, Galymzhan T. [Physics Department, Colorado State University, Fort Collins, CO 80523 (United States)

2009-02-02

Zinc cadmium sulfide (Zn{sub x}Cd{sub 1-x}S) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn{sub 1-x}Ga{sub x}S{sub 2} (CIGS2) solar cells. CIGS2/Zn{sub x}Cd{sub 1-x}S devices have also shown higher open circuit voltage, V{sub oc} indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher V{sub oc} can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/Zn{sub x}Cd{sub 1-x}S devices.

Novel chemical analysis for thin films

International Nuclear Information System (INIS)

Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji

1991-01-01

Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)

Nanostructured thin film coatings with different strengthening effects

Directory of Open Access Journals (Sweden)

Panfilov Yury

2017-01-01

Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

Stimulation of the photoluminescent properties of CBD-CdS thin films achieved by structural modifications resulting from Ag{sup +} doping

Energy Technology Data Exchange (ETDEWEB)

Flores-Pacheco, A.; Contreras-Rascon, J.I.; Castillo, S.J.; Alvarez-Ramos, M.E. [Posgrado en Nanotecnologia, Departamento de Fisica, Universidad de Sonora, Hermosillo (Mexico); Diaz-Reyes, J. [Centro de Investigacion en Biotecnologia Aplicada, Instituto Politecnico Nacional, Tepetitla, Tlaxcala (Mexico); Angel-Vicente, P.D. [Instituto Mexicano del Petroleo, Direccion de Investigacion y Posgrado, Ciudad de Mexico (Mexico); Enriquez, J.P. [Centro de Investigacion y Desarrollo Tecnologico en Energias Renovables, Universidad de Ciencias y Artes de Chiapas, Tuxtla Gutierrez (Mexico)

2017-08-15

The present study details the changes in photoluminescence properties stimulated by the structural changes in consequence of doping the II-VI nanocomposite thin-film semiconductor cadmium sulfide (CdS) with the IB metallic ion Ag{sup +}. The synthesis of the matrix and doped semiconductors was performed using low-temperature chemical bath deposition (CBD). The doping percentage of the CdS matrix was determined by energy-dispersive X-ray spectroscopy (EDS) with a value around 3%. The crystallographic study shows a cubic (1 1 1) preferential growth plane for the undoped material. Both X-ray and HRTEM characterizations show the presence of a polycrystalline structure for the Ag{sup +}-doped sample. Measurements of particle size from HRTEM micrographs confirm quantum confinement with a reduction of the average particle size from 5.46 to 4.12 nm in the doped sample. The photoluminescence study shows intense downshifted emissions in the green range of the visible spectrum. This could be due to the shallow electron traps formed by crystalline defects in the lattice, which are induced by the metallic ion. This study also shows higher-energy emissions due to the decrease of the particle size below the effective CdS exciton Bohr radius. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Kinetic analysis on photocatalytic degradation of gaseous acetaldehyde, ammonia and hydrogen sulfide on nanosized porous TiO2 films

Directory of Open Access Journals (Sweden)

Iis Sopyan

2007-01-01

Full Text Available The characteristics of the UV illumination-assisted degradation of gaseous acetaldehyde, hydrogen sulfide, and ammonia on highly active nanostructured-anatase and rutile films were investigated. It was found that the anatase film showed a higher photocatalytic activity than the counterpart did, however, the magnitude of difference in the photocatalytic activity of both films decreased in the order ammonia>acetaldehyde>hydrogen sulfide. To elucidate the reasons for the observation, the adsorption characteristics and the kinetics of photocatalytic degradation of the three reactants on both films were analyzed. The adsorption analysis examined using a simple Langmuir isotherm, showed that adsorbability on both films decreased in the order ammonia>acetaldehyde>hydrogen sulfide, which can be explained in terms of the decreasing electron-donor capacity. Acetaldehyde and ammonia adsorbed more strongly and with higher coverage on anatase film (1.2 and 5.6 molecules/nm2, respectively than on rutile (0.6 and 4.7 molecules/nm2, respectively. Conversely, hydrogen sulfide molecules adsorbed more strongly on rutile film (0.7 molecules/nm2 than on anatase (0.4 molecules/nm2. Exposure to UV light illumination brought about the photocatalytic oxidation of the three gases in contact with both TiO2 films, and the decrease in concentration were measured, and their kinetics are analyzed in terms of the Langmuir–Hinshelwood kinetic model. From the kinetic analysis, it was found that the anatase film showed the photocatalytic activities that were factors of ~8 and ~5 higher than the rutile film for the degradation of gaseous ammonia and acetaldehyde, respectively. However, the activity was only a factor of ~1.5 higher for the photodegradation of hydrogen sulfide. These observations are systematically explained by the charge separation efficiency and the adsorption characteristics of each catalyst as well as by the physical and electrochemical properties of each

Thin Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K.

1998-11-19

The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

Thin films: Past, present, future

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K

1995-04-01

This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

Non-linear optics of nano-scale pentacene thin film

Science.gov (United States)

Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

2016-07-01

We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.

Oxidation of ruthenium thin films using atomic oxygen

Energy Technology Data Exchange (ETDEWEB)

McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

2015-12-31

In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

Landfill waste and recycling: Use of a screening-level risk assessment tool for end-of-life cadmium telluride (CdTe) thin-film photovoltaic (PV) panels

International Nuclear Information System (INIS)

Cyrs, William D.; Avens, Heather J.; Capshaw, Zachary A.; Kingsbury, Robert A.; Sahmel, Jennifer; Tvermoes, Brooke E.

2014-01-01

Grid-connected solar photovoltaic (PV) power is currently one of the fastest growing power-generation technologies in the world. While PV technologies provide the environmental benefit of zero emissions during use, the use of heavy metals in thin-film PV cells raises important health and environmental concerns regarding the end-of-life disposal of PV panels. To date, there is no published quantitative assessment of the potential human health risk due to cadmium leaching from cadmium telluride (CdTe) PV panels disposed in a landfill. Thus, we used a screening-level risk assessment tool to estimate possible human health risk associated with disposal of CdTe panels into landfills. In addition, we conducted a literature review of potential cadmium release from the recycling process in order to contrast the potential health risks from PV panel disposal in landfills to those from PV panel recycling. Based on the results of our literature review, a meaningful risk comparison cannot be performed at this time. Based on the human health risk estimates generated for PV panel disposal, our assessment indicated that landfill disposal of CdTe panels does not pose a human health hazard at current production volumes, although our results pointed to the importance of CdTe PV panel end-of-life management. - Highlights: • Analysis of possible human health risk posed by disposal of CdTe panels into landfills. • Qualitative comparison of risks associated with landfill disposal and recycling of CdTe panels. • Landfill disposal of CdTe panels does not pose a human health hazard at current production volumes. • There could be potential risks associated with recycling if not properly managed. • Factors other than concerns over toxic substances will likely drive the decisions of how to manage end-of-life PV panels

Thin Films in the Photovoltaic Industry

International Nuclear Information System (INIS)

Jaeger-Waldau, A.

2008-03-01

In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

Nanostructured thin films and coatings functional properties

CERN Document Server

Zhang, Sam

2010-01-01

The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

Covalent attachment of thionine onto gold electrode modified with cadmium sulfide nanoparticles: Improvement of electrocatalytic and photelectrocatalytic reduction of hydrogen peroxide

International Nuclear Information System (INIS)

Salimi, Abdollah; Rahmatpanah, Rojzin; Hallaj, Rahman; Roushani, Mahmoud

2013-01-01

A newly developed strategy based on gold (Au) electrode modified with cadmium sulfide nanoparticles (CdSnp) and thionine (Th) was proposed toward electrocatalytic and photoelectrocatalytic hydrogen peroxide (H 2 O 2 ) reduction. At first, a thin film of CdS nanoparticles was electrodeposited onto Au electrode. Then, the CdS/Au electrode was modified with mercaptoacetic acid (MAA), which not only acts as a stabilizing agent to prevent the chalcogenide CdS nanocrystals from aggregation but also as a linker for subsequent attachment of Th onto the CdS nanoparticles. The effective covalent immobilization of Th was achieved through amide bond formation reaction between -NH 2 groups of Th and -COOH groups of MAA, using dicyclohexylcarbodiimide (DCC) as condensation agent. The Au/CdS/Th modified electrode showed a well-defined redox couple with surface confined characteristics at wide pH range (2–12). The heterogeneous electron transfer rate constant (k s ) and the surface coverage of immobilized Th on the modified electrode was obtained as 0.12 s −1 and 4.35 × 10 −9 mole cm −2 , respectively. The electrocatalytic activity and stability of the modified electrode toward hydrogen peroxide reduction was investigated and it was found that the Au/CdS/Th electrode illustrates excellent electrocatalytic activity toward H 2 O 2 reduction at reduced overpotential. The detection limit, sensitivity and catalytic rate constant (k cat ) of the modified electrode toward H 2 O 2 were 55 nM, 3.4 μA μM −1 cm −2 and 3.75 (±0.1) × 10 3 M −1 s −1 , respectively, at linear concentration range up to 10 mM. Upon light irradiation, about two-fold improvements were attained in sensitivity and detection limit of the modified electrode toward H 2 O 2 electrocatalytic determination

I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

Science.gov (United States)

Chen, Wen S.; Stewart, John M.

1992-01-07

A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

Optical and electrical properties of In-doped CdO thin films fabricated by pulse laser deposition

International Nuclear Information System (INIS)

Zheng, B.J.; Lian, J.S.; Zhao, L.; Jiang, Q.

2010-01-01

Transparent indium-doped cadmium oxide (In-CdO) thin films were deposited on quartz glass substrates by pulse laser deposition (PLD) from ablating Cd-In metallic target at a fixed pressure 10 Pa and a fixed substrate temperature 300 deg. C. The influences of indium concentrations in target on the microstructure, optical and electrical performances were studied. When the indium concentration reaches to 3.9 wt%, the as-deposited In-CdO film shows high optical transmission in visible light region, obviously enhanced direct band gap energy (2.97 eV), higher carrier concentration and lower electric resistivity compared with the undoped CdO film, while a further increase of indium concentration to 5.6 wt% induces the formation of In 2 O 3 , which reverse the variation of these parameters and performance.

Potentialities and practical limitations of absolute neutron dosimetry using thin films of uranium and thorium applied to the fission track dating

CERN Document Server

Bigazzi, G; Hadler-Neto, J C; Iunes, P J; Paulo, S R; Oddone, M; Osorio, A M A; Zúñiga, A G

1999-01-01

Neutron dosimetry using natural uranium and thorium thin films makes possible that mineral dating by the fission-track method can be accomplished, even when poor thermalized neutron facilities are employed. In this case, the contributions of the fissions of sup 2 sup 3 sup 5 U, sup 2 sup 3 sup 8 U and sup 2 sup 3 sup 2 Th induced by thermal, epithermal and fast neutrons to the population of tracks produced during irradiation are quantified through the combined use of natural uranium and thorium films. If the Th/U ratio of the sample is known, only one irradiation (where the sample and the films of uranium and thorium are present) is necessary to perform the dating. However, if that ratio is unknown, it can be determined through another irradiation where the mineral to be dated and both films are placed inside a cadmium box. Problems related with film manufacturing and calibration are discussed. Special attention is given to the utilization of thin films having very low uranium content. The problems faced sugg...

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

Science.gov (United States)

Rajanikant, Ray Jayminkumar

pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further

Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

Energy Technology Data Exchange (ETDEWEB)

Laatar, F., E-mail: fakher8laatar@gmail.com [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Harizi, A. [Photovoltaic and Semiconductor Materials Laboratory, Engineering Industrial Department, ENIT, Tunis El Manar University, BP 37, Le Belvédère, 1002 Tunis (Tunisia); Smida, A. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

2016-06-15

Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E{sub o}), dispersion energy (E{sub d}), and static refractive index (n{sub o}) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ{sub e}) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

Intrinsically conductive polymer thin film piezoresistors

DEFF Research Database (Denmark)

Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

2008-01-01

We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

Energy Technology Data Exchange (ETDEWEB)

Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

2016-01-01

Graphical abstract: - Highlights: • The large-area CdTe film has been prepared by PVD under the pressure of 0.9 kPa. • The as-prepared CdTe thin film processes excellent photovoltaic properties. • This technique is suitable for depositing large-area CdTe thin film. • The 14.6% champion efficiency CdS/CdTe cell has been achieved. - Abstract: The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O{sub 2} pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm{sup 2}. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O{sub 2} flow. Through this method, the compact and uniform CdTe film (30 × 40 cm{sup 2}) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm{sup 2}) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (J{sub sc}) of the cell is 26.9 mA/cm{sup 2}, open circuit voltage (V{sub oc}) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

Carbon steel protection in G.S. (Girlder sulfide) plants. Iron sulfide scales formation on surfaces covered by fabrication produced films. Pt. 4

International Nuclear Information System (INIS)

Burkart, A.L.

1986-04-01

This work describes the assays aimed to passivate the steel carbon of the process pipings. This steel is marked by the ASTM A 333 G6 and is chemically similar to those of isotopic exchange towers which corrode in contact with in-water hydrogen sulfide solutions forming iron sulfide protective layers. The differences between both materials lie in the surface characteristics to be passivated. The steel of towers has an internal side covered by paint which shall be removed prior to passivation. The steel's internal side shall be covered by a film formed during the fabrication process and constituted by calcinated wastes and iron oxides (magnetite, hematite and wustite). This film interferes in the formation process of passivating layers of pyrrhotite and pyrite. The possibility to passivate the pipes in their actual state was evaluated since it would result highly laborious and expensive to eliminate the film. (Author) [es

Thermal conductivity model for nanoporous thin films

Science.gov (United States)

Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

2018-03-01

Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

Investigations of the thermal treatment effect on the generation of cadmium sulfide clusters in polymeric films

International Nuclear Information System (INIS)

Stanculescu, Anca; Socol, M.; Stanculescu, F.

2002-01-01

In the last years a special interest has been paid to the field of nanometer-sized semiconductor compound crystalline clusters synthesized in different matrix (inorganic or organic), due to their special physical and chemical properties intermediate between the molecular and bulk limits. To obtain the thin film samples of CdS particles embedded in a polymeric transparent matrix, as bisphenol A polycarbonate, we followed a process containing three important steps: preparation of the so-called 'mother solution', film deposition and thermal treatment. The samples obtained after the first two steps were heat treated at different temperatures (90 deg. C and 150 deg. C) for 0.5 h, 1 h and 1.5 h, and we have analyzed the influence of these parameters on the film quality using UV-VIS spectrophotometric methods. This paper presents a study of the influence of the thermal treatment on the CdS clusters' generation process and film quality and homogeneity. The parameters of the processing procedure of the polymeric film, as the cooling rate, have a great influence on the rate of germination and development of the crystalline phase. A slow cooling rate is a more favorable process for CdS clusters' formation, indicated .by structured features of the fundamental absorption situated between 350-450 nm. When the temperature for thermal treatment increases to 90 deg. C a sharp rise and a shift to shorter wavelengths of the absorption onset edge was observed. This shift proves the existence of a weak quantum confinement effects. We concluded that these two parameters have some equivalent effects on the CdS clusters' generation in polymeric matrix. Varying the treatment duration with a fixed temperature produces similar results as the fixed duration, varied temperature treatment. (authors)

Photoinduced hydrophobic surface of graphene oxide thin films

International Nuclear Information System (INIS)

Zhang Xiaoyan; Song Peng; Cui Xiaoli

2012-01-01

Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

Optical thin film deposition

International Nuclear Information System (INIS)

Macleod, H.A.

1979-01-01

The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

Preparation of nanocrystalline Ni doped ZnS thin films by ammonia-free chemical bath deposition method and optical properties

Energy Technology Data Exchange (ETDEWEB)

Sahraei, Reza, E-mail: r.sahraei@ilam.ac.ir; Darafarin, Soraya

2014-05-01

Nanocrystalline Ni doped ZnS thin films were deposited on quartz, silicon, and glass substrates using chemical bath deposition method in a weak acidic solution containing ethylenediamine tetra acetic acid disodium salt (Na{sub 2}EDTA) as a complexing agent for zinc ions and thioacetamide (TAA) as a sulfide source at 80 °C. The films were characterized by energy-dispersive X-ray spectrometer (EDX), inductively coupled plasma atomic emission spectroscopy (ICP-AES), Fourier transform-infrared (FT-IR) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet–visible spectrophotometry, and photoluminescence (PL) spectroscopy. UV–vis transmission data showed that the films were transparent in the visible region. The X-ray diffraction analysis showed a cubic zinc blend structure. FE-SEM revealed a homogeneous morphology and dense nanostructures. The PL spectra of the ZnS:Ni films showed two characteristic bands, one broad band centered at 430 and another narrow band at 523 nm. Furthermore, concentration quenching effect on the photoluminescence intensity has been observed. - Highlights: • Nanocrystalline ZnS:Ni thin films were prepared by the chemical bath deposition method. • The size of ZnS:Ni nanocrystals was less than 10 nm showing quantum size effect. • SEM images demonstrated a dense and uniform surface that was free of pinholes. • The deposited films were highly transparent (>70%) in the visible region. • The PL spectra of ZnS:Ni thin films showed two emission peaks at 430 and 523 nm.

Optical thin films and coatings from materials to applications

CERN Document Server

Flory, Francois

2013-01-01

Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

Structural origin of surface transformations in arsenic sulfide thin films upon UV-irradiation

International Nuclear Information System (INIS)

Kovalskiy, Andriy; Vlcek, Miroslav; Palka, Karel; Buzek, Jan; York-Winegar, James; Oelgoetz, Justin; Golovchak, Roman; Shpotyuk, Oleh; Jain, Himanshu

2017-01-01

Photostructural transformations within As_xS_1_0_0_-_x (x = 30, 33, 35, 40) thin films upon exposure to LED light of different wavelengths, in both air and argon environments have been studied by high resolution XPS, Raman spectroscopy and LEIS methods. These complementary results show that light of energies close to the band gap does not modify chemical composition of the surface, but induces simple photopolymerization reactions. Superbandgap UV light, however, significantly increases S/As ratio on the surface due to formation of S-rich layer under both environmental conditions. It is proposed that photovaporization of both oxide and non-oxide cage-like molecules is responsible for the observed effect.

Structural origin of surface transformations in arsenic sulfide thin films upon UV-irradiation

Energy Technology Data Exchange (ETDEWEB)

Kovalskiy, Andriy, E-mail: kovalskiya@apsu.edu [Department of Physics & Astronomy, Austin Peay State University, 601 College St., Clarksville, TN 37044 (United States); Vlcek, Miroslav [Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, nam. Cs. Legii 565, 530 02 Pardubice (Czech Republic); Palka, Karel [Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, nam. Cs. Legii 565, 530 02 Pardubice (Czech Republic); Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Buzek, Jan [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); York-Winegar, James; Oelgoetz, Justin; Golovchak, Roman [Department of Physics & Astronomy, Austin Peay State University, 601 College St., Clarksville, TN 37044 (United States); Shpotyuk, Oleh [Vlokh Institute of Physical Optics, 23 Dragomanov str., Lviv 79005 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa PL-42201 (Poland); Jain, Himanshu [Department of Materials Science & Engineering, Lehigh University, 5 East Packer Ave., Bethlehem, PA 18015 (United States)

2017-02-01

Photostructural transformations within As{sub x}S{sub 100-x} (x = 30, 33, 35, 40) thin films upon exposure to LED light of different wavelengths, in both air and argon environments have been studied by high resolution XPS, Raman spectroscopy and LEIS methods. These complementary results show that light of energies close to the band gap does not modify chemical composition of the surface, but induces simple photopolymerization reactions. Superbandgap UV light, however, significantly increases S/As ratio on the surface due to formation of S-rich layer under both environmental conditions. It is proposed that photovaporization of both oxide and non-oxide cage-like molecules is responsible for the observed effect.

Sputtering materials for VLSI and thin film devices

CERN Document Server

Sarkar, Jaydeep

2010-01-01

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

Chemically deposited In{sub 2}S{sub 3}-Ag{sub 2}S layers to obtain AgInS{sub 2} thin films by thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Lugo, S. [Universidad Autonoma de Nuevo Leon, UANL, Fac. de Ciencias Quimicas, Av. Universidad S/N Ciudad Universitaria San Nicolas de Los Garza Nuevo Leon, C.P. 66451 (Mexico); Pena, Y., E-mail: yolapm@gmail.com [Universidad Autonoma de Nuevo Leon, UANL, Fac. de Ciencias Quimicas, Av. Universidad S/N Ciudad Universitaria San Nicolas de Los Garza Nuevo Leon, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico); Lopez-Mata, C. [Instituto Tecnologico de Chetumal, Av. Insurgentes No. 330, C.P. 77013, Col. David Gustavo Gtz., Chetumal, Quintana Roo (Mexico); Ramon, M.L. [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico); Gomez, I.; Acosta, A. [Universidad Autonoma de Nuevo Leon, UANL, Fac. de Ciencias Quimicas, Av. Universidad S/N Ciudad Universitaria San Nicolas de Los Garza Nuevo Leon, C.P. 66451 (Mexico)

2012-12-15

Highlights: Black-Right-Pointing-Pointer We obtained polycrystalline silver indium sulfide thin films through the annealing of chemically deposited In{sub 2}S{sub 3}-Ag{sub 2}S films. Black-Right-Pointing-Pointer According to XRD chalcopyrite structure of AgInS{sub 2} was obtained. Black-Right-Pointing-Pointer AgInS{sub 2} thin film has a band gap of 1.86 eV and a conductivity value of 1.2 Multiplication-Sign 10{sup -3} ({Omega} cm){sup -1}. - Abstract: AgInS{sub 2} thin films were obtained by the annealing of chemical bath deposited In{sub 2}S{sub 3}-Ag{sub 2}S layers at 400 Degree-Sign C in N{sub 2} for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS{sub 2} has been obtained. These films have an optical band gap, E{sub g}, of 1.86 eV and an electrical conductivity value of 1.2 Multiplication-Sign 10{sup -3} ({Omega} cm){sup -1}.

Critical review of animal carcinogenesis by cadmium and its inorganic compounds

International Nuclear Information System (INIS)

Maximilien, R.; Dero, B.

1990-01-01

Animal carcinogenic biassays relative to 6 inorganic cadmium substances (cadmium metal, cadmium oxide, cadmium sulfide, cadmium sulfate, cadmium chloride and cadmium acetate) are reviewed (speciation). Critical evaluation of literature data on carcinogenicity has been performed by making reference to E.C. guidelines of good laboratory practice. There are few data on routes relevant for human risk assessment: experiments on inhalation demonstrate lung carcinogenicity of cadmium oxide, cadmium sulfide, cadmium sulfate and cadmium chloride in rats but not in mice nor in hamsters; no carcinogenic effects of cadmium compounds are observed following oral administration. For routes of less or no relevance for human risk assessment, some results are clearly positive: subcutaneous injection induces cancers in situ (various cadmium compounds), testicular tumours (cadmium sulfate and cadmium chloride) and prostatic tumours (cadmium chloride) but such effects are not observed using relevant malignancies in rats. With respect to other no relevant routes (intraperitoneal, intrarenal...) tumours are incidentally produced in situ, but not in remote organs. Numerous studies fail to demonstrate cadmium carcinogenicity, but methodologically acceptable negative ones are very limited in number. Accordingly strain dependent effects and dose effect relationship could not be thoroughly assessed

Effect of complexing agent TEA: The structural, morphological, topographical and optical properties of FexSx nano thin films deposited by SILAR technique

International Nuclear Information System (INIS)

Manikandan, K.; Mani, P.; Surendra Dilip, C.; Valli, S.; Fermi Hilbert Inbaraj, P.; Joseph Prince, J.

2014-01-01

Iron sulfide thin films (Fe x S x ) (x = 0.05 M, 0.10 M, 0.15 M, 0.20 M and 0.25 M) were deposited by SILAR method from equimolar and equivolume aqueous solutions of ferrous nitrate and sodium sulfide with the addition of complexing agent TEA. The structural, morphological and optical characteristics of the films were derived from X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–vis spectral techniques. The mixed characteristics (crystalline and amorphous) of the deposited films and the increasing crystalline qualities with the concentrations were understood from the XRD analysis. The grain sizes and roughness of the films were decreases with the increasing concentration and also at the higher concentration films are shown by the same images presence of hexagonal like crystallite structure. The influence of complexing agent TEA on the surface roughness and morphological properties are confirmed by the atomic force microscope (AFM) results. The effect of increasing substrate concentration on the absorption and transmission measurements and its impact on the optical band-gap energy were enumerated from the UV–vis analysis.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

Science.gov (United States)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

Science.gov (United States)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Investigation of interaction between silver oxide electrode and separator hydrated cellulose film in silver-cadmium accumulators

International Nuclear Information System (INIS)

Molotkova, E.N.; Yarochkina, E.N.

1975-01-01

Oxidation-reduction interaction of the oxysilver electrode with hydrocellulose film during storing charged silver-cadmium accumulators. It was demonstrated that accumulator electric characteristics durinq storing are linearly depending on the capacity of this hydrocellulose film to interact with silver oxide: the more silver is absorbed by film the quicker is the decreasing of the electromotive force and capacity of the accumulators. Preservation of the silver electrode capacity in the silver-cadmium accumulators is determined first of all by hydrocellulose separation film properties and especially by film layer adjacent to positive electrode. The more inert film layer is, regarding to silver oxide in the electrolite, the slower is dissolution of the electrode and also decompousing speed of AgO, the longer is the accumulator preservation time

Economic viability of thin-film tandem solar modules in the United States

Science.gov (United States)

Sofia, Sarah E.; Mailoa, Jonathan P.; Weiss, Dirk N.; Stanbery, Billy J.; Buonassisi, Tonio; Peters, I. Marius

2018-05-01

Tandem solar cells are more efficient but more expensive per unit area than established single-junction (SJ) solar cells. To understand when specific tandem architectures should be utilized, we evaluate the cost-effectiveness of different II-VI-based thin-film tandem solar cells and compare them to the SJ subcells. Levelized cost of electricity (LCOE) and energy yield are calculated for four technologies: industrial cadmium telluride and copper indium gallium selenide, and their hypothetical two-terminal (series-connected subcells) and four-terminal (electrically independent subcells) tandems, assuming record SJ quality subcells. Different climatic conditions and scales (residential and utility scale) are considered. We show that, for US residential systems with current balance-of-system costs, the four-terminal tandem has the lowest LCOE because of its superior energy yield, even though it has the highest US per watt (US W-1) module cost. For utility-scale systems, the lowest LCOE architecture is the cadmium telluride single junction, the lowest US W-1 module. The two-terminal tandem requires decreased subcell absorber costs to reach competitiveness over the four-terminal one.

Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

KAUST Repository

Yave, Wilfredo

2010-09-01

Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform thickness (<100 nm) is crucial. By using a tailor-made polymer and by controlling the nanofabrication conditions, we developed and manufactured defect-free ultra-thin film membranes with unmatched carbon dioxide permeances, i.e. >5 m3 (STP) m-2 h -1 bar-1. The permeances are extremely high, because the membranes are made from a CO2 philic polymer material and they are only a few tens of nanometers thin. Thus, these thin film membranes have potential application in the treatment of large gas streams under low pressure like, e.g., carbon dioxide separation from flue gas. © 2010 IOP Publishing Ltd.

Thin film bismuth iron oxides useful for piezoelectric devices

Science.gov (United States)

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Deposition of very thin uniform indium sulfide layers over metallic nano-rods by the Spray-Ion Layer Gas Reaction method

Energy Technology Data Exchange (ETDEWEB)

Genduso, G. [Dipartimento di Ingegneria Chimica, Gestionale, Informatica, Meccanica, Università di Palermo, Viale delle Scienze, 90100 Palermo (Italy); Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Inguanta, R.; Sunseri, C.; Piazza, S. [Dipartimento di Ingegneria Chimica, Gestionale, Informatica, Meccanica, Università di Palermo, Viale delle Scienze, 90100 Palermo (Italy); Kelch, C.; Sáez-Araoz, R. [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Zykov, A. [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); present address: Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15,12489 Berlin (Germany); Fischer, Ch.-H., E-mail: fischer@helmholtz-berlin.de [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); second affiliation: Free University Berlin, Chemistry Institute, Takustr. 3, D-14195 Berlin (Germany)

2013-12-02

Very thin and uniform layers of indium sulfide were deposited on nickel nano-rods using the sequential and cyclical Spray-ILGAR® (Ion Layer Gas Reaction) technique. Substrates were fabricated by electrodeposition of Ni within the pores of polycarbonate membranes and subsequent chemical dissolution of the template. With respect to the depositions on flat substrates, experimental conditions were modified and optimized for the present geometry. Our results show that nano-rods up to a length of 10 μm were covered uniformly along their full length and with an almost constant film growth rate, thus allowing a good control of the coating thickness; the effect of the deposition temperature was also investigated. However, for high numbers of process steps, i.e. thickness, the films became uneven and crusty, especially at higher temperature, mainly owing to the simultaneous side reaction of the metallic Ni forming nickel sulfide at the surface of the rods. However, such a problem occurs only in the case of reactive nano-rod materials, such as less noble metals. It could be strongly reduced by doubling the spray step duration and thereby sealing the metallic surface before the process step of the sulfurization. Thus, quite smooth, about 100 nm thick coatings could be obtained. - Highlights: • Ni nano-rod substrates were grown within polycarbonate membranes. • We can coat nano-rods uniformly by the Ion Layer Gas Reaction method. • As a model we deposited up to about 100 nm In{sub 2}S{sub 3} on Ni nanorods (250 nm × 10 μm). • Element mapping at insulated rods showed homogenous coating over the full length. • Parameter optimization reduced effectively the Ni sulfide formation.