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Sample records for thin films evaporated

  1. Parametric study of thin film evaporation from nanoporous membranes

    Science.gov (United States)

    Wilke, Kyle L.; Barabadi, Banafsheh; Lu, Zhengmao; Zhang, TieJun; Wang, Evelyn N.

    2017-10-01

    The performance and lifetime of advanced electronics are often dictated by the ability to dissipate heat generated within the device. Thin film evaporation from nanoporous membranes is a promising thermal management approach, which reduces the thermal transport distance across the liquid film while also providing passive capillary pumping of liquid to the evaporating interface. In this work, we investigated the dependence of thin film evaporation from nanoporous membranes on a variety of geometric parameters. Anodic aluminum oxide membranes were used as experimental templates, where pore radii of 28-75 nm, porosities of 0.1-0.35, and meniscus locations down to 1 μm within the pore were tested. We demonstrated different heat transfer regimes and observed more than an order of magnitude increase in dissipated heat flux by operating in the pore-level evaporation regime. The pore diameter had little effect on pore-level evaporation performance due to the negligible conduction resistance from the pore wall to the evaporating interface. The dissipated heat flux scaled with porosity as the evaporative area increased. Furthermore, moving the meniscus as little as 1 μm into the pore decreased the dissipated heat flux by more than a factor of two due to the added resistance to vapor escaping the pore. The experimental results elucidate thin film evaporation from nanopores and confirm findings of recent modeling efforts. This work also provides guidance for the design of future thin film evaporation devices for advanced thermal management. Furthermore, evaporation from nanopores is relevant to water purification, chemical separations, microfluidics, and natural processes such as transpiration.

  2. Simple flash evaporator for making thin films of compounds

    Energy Technology Data Exchange (ETDEWEB)

    Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

    2010-07-15

    A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

  3. Thin film circuits for future applications. Pt. 2. Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Haug, G; Houska, K H; Schmidt, H J; Sprengel, H P; Wohak, K

    1976-06-01

    Investigations of thin film diffusion processes and reactions with encapsulation materials resulted in improved long term stability of evaporated NiCr resistors, SiO capacitors and NiCr/Au conductors for thin film circuits. Stable NiCr resistor networks can be formed on ceramic substrates, and SiO capacitors of good quality can be deposited on the new very smooth ceramic substrates. The knowledge of the influence of evaporation parameters make the production of SiO capacitors with definite properties and good reproducibility possible. The range of capacitance of tantalum thin film circuits can be extended by integration with evaporated SiO capacitors.

  4. FABRICATION OF ZNS THIN FILM FOR INORGANIC EL BY THE VACCUUM EVAPORATION

    OpenAIRE

    龍見, 雅美; 島谷, 圭市; 小西, 信行; 元木, 健作

    2008-01-01

    "Zinc sulfide is a typical material for inorganic electroluminescent(EL) device. Recently very high luminance and life time e has been reported on an inorganic EL device based on thin film zinc sulfide material. The present study tries to realize high quality zinc sulfide thin film for EL device. The thin film was grown by the vacuum evaporation method. In order to obtain stoichiometric thin film, the vacuum evaporation was carried out in a quasi-closed vessel under a condition of sulfur atmo...

  5. Structuring of thin-film polymer mixtures upon solvent evaporation

    NARCIS (Netherlands)

    Schaefer, C.; Michels, J.J.; van der Schoot, P.P.A.M.

    2016-01-01

    We theoretically study the impact of solvent evaporation on the dynamics of isothermal phase separation of ternary polymer solutions in thin films. In the early stages we obtain a spinodal length scale that decreases with time under the influence of ongoing evaporation. After that rapid demixing

  6. Structuring of Thin-Film Polymer Mixtures upon Solvent Evaporation

    NARCIS (Netherlands)

    Schaefer, C.; Michels, J. J.; van der Schoot, P.

    2016-01-01

    We theoretically study the impact of solvent evaporation on the dynamics of isothermal phase separation of ternary polymer solutions in thin films. In the early stages we obtain a spinodal length scale that decreases with time under the influence of ongoing evaporation. After that rapid demixing

  7. Photoluminescence of electron beam evaporated CaS:Bi thin films

    CERN Document Server

    Smet, P F; Poelman, D R; Meirhaeghe, R L V

    2003-01-01

    For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

  8. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Swati Arora

    2017-01-01

    Full Text Available Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te and bismuth (Bi were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD and scanning electron microscopy (SEM to show granular growth.

  9. Morphological Evolution of Gyroid-Forming Block Copolymer Thin Films with Varying Solvent Evaporation Rate.

    Science.gov (United States)

    Wu, Yi-Hsiu; Lo, Ting-Ya; She, Ming-Shiuan; Ho, Rong-Ming

    2015-08-05

    In this study, we aim to examine the morphological evolution of block copolymer (BCP) nanostructured thin films through solvent evaporation at different rates for solvent swollen polystyrene-block-poly(l-lactide) (PS-PLLA). Interesting phase transitions from disorder to perpendicular cylinder and then gyroid can be found while using a partially selective solvent for PS to swell PS-PLLA thin film followed by solvent evaporation. During the transitions, gyroid-forming BCP thin film with characteristic crystallographic planes of (111)G, (110)G, and (211)G parallel to air surface can be observed, and will gradually transform into coexisting (110)G and (211)G planes, and finally transforms to (211)G plane due to the preferential segregation of constituted block to the surface (i.e., the thermodynamic origin for self-assembly) that affects the relative amount of each component at the air surface. With the decrease on the evaporation rate, the disorder phase will transform to parallel cylinder and then directly to (211)G without transition to perpendicular cylinder phase. Most importantly, the morphological evolution of PS-PLLA thin films is strongly dependent upon the solvent removal rate only in the initial stage of the evaporation process due to the anisotropy of cylinder structure. Once the morphology is transformed back to the isotropic gyroid structure after long evaporation, the morphological evolution will only relate to the variation of the surface composition. Similar phase transitions at the substrate can also be obtained by controlling the ratio of PLLA-OH to PS-OH homopolymers to functionalize the substrate. As a result, the fabrication of well-defined nanostructured thin films with controlled orientation can be achieved by simple swelling and deswelling with controlled evaporation rate.

  10. Chloroform micro-evaporation induced ordered structures of poly(L-lactide) thin films

    DEFF Research Database (Denmark)

    Huang, Shaoyong; Li, Hongfei; Shang, Yingrui

    2013-01-01

    Self-assembly of poly(L-lactide) (PLLA) in thin films induced by chloroform micro-evaporation was investigated by microscopic techniques and X-ray diffraction studies. A film-thickness dependent on highly ordered structures has been derived from disordered films. Ring-banded spherulitic...... and dendritic morphologies with radial periodic variation of thicknesses were formed in dilute solution driven by micro-evaporation of the solvent. Bunched morphologies stacked with a flat-on lozenge-shaped lamellae were created in thinner films. The formation of the concentric ring banded structures...

  11. Y-Ba-Cu-O superconducting thin films by simultaneous or sequential evaporation

    International Nuclear Information System (INIS)

    Mogro-Campero, A.; Hunt, B.D.; Turner, L.G.; Burrell, M.C.; Balz, W.E.

    1988-01-01

    Superconducting thin films of Y-Ba-Cu-O near the 1:2:3 stoichiometry were produced by simultaneous (coevaporation) and sequential (multilayer) evaporation in the same evaporator. The best film obtained on yttria-stabilized zirconia (YSZ) had a superconducting onset temperature of 104 K, a midpoint T/sub c/ of 92 K, and zero resistance at T≤74 K. Stoichiometry was deduced by inductively coupled plasma emission spectroscopy, and elemental depth profiles were obtained by x-ray photoelectron spectroscopy. Film stoichiometry changes only near the film/substrate boundary for films on YSZ. Films on Si/SiO 2 were not superconducting; depth profiling shows severe changes of film composition with depth. A major theme of this work is process reproducibility, which was found to be poor for coevaporation but improved considerably for sequential evaporation

  12. Fabrication of Carbon Nanotube Thin Films by Evaporation-Induced Self-Assembly

    OpenAIRE

    Li, Han

    2015-01-01

    In summary, we have prepared single-wall carbon nanotube (SWNT) thin films by the method of evaporation-induced self-assembly (EISA). Using the scalable two-plate or lens setups, sorts of different film types or patterns of SWNTs has been successfully fabricated directly from the evaporation of solvents and could be precisely controlled by the concentrations of SWNT in ambient conditions. The special geometry of meniscus as the capillary bridge has not only given rise to a much higher efficie...

  13. Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

    2016-08-01

    The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

  14. Cu2ZnSnS4 thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

    International Nuclear Information System (INIS)

    Caballero, R.; Izquierdo-Roca, V.; Merino, J.M.; Friedrich, E.J.; Climent-Font, A.; Saucedo, E.; 2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" >Pérez-Rodríguez, A.; León, M.

    2013-01-01

    A study of Cu 2 ZnSnS 4 thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu 2 ZnSnS 4 bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu 2 ZnSnS 4 deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu 2 ZnSnS 4 (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells

  15. XPS analysis of the activation process in non-evaporable getter thin films

    CERN Document Server

    Lozano, M

    2000-01-01

    The surface activation process of sputter-coated non-evaporable getter (NEG) thin films based on Ti-Zr and Ti-Zr-V alloys has been studied in situ by means of X-ray photoelectron spectroscopy. After exposure of the NEG thin films to ambient air they become reactivated after a thermal treatment in an ultrahigh vacuum. In our case the films are heated up to ~250 degrees C for 2 h in a base pressure of ~10/sup -9/ Torr. (18 refs).

  16. Modelling approaches to the dewetting of evaporating thin films of nanoparticle suspensions

    International Nuclear Information System (INIS)

    Thiele, U; Vancea, I; Archer, A J; Robbins, M J; Frastia, L; Stannard, A; Pauliac-Vaujour, E; Martin, C P; Blunt, M O; Moriarty, P J

    2009-01-01

    We review recent experiments on dewetting thin films of evaporating colloidal nanoparticle suspensions (nanofluids) and discuss several theoretical approaches to describe the ongoing processes including coupled transport and phase changes. These approaches range from microscopic discrete stochastic theories to mesoscopic continuous deterministic descriptions. In particular, we describe (i) a microscopic kinetic Monte Carlo model, (ii) a dynamical density functional theory and (iii) a hydrodynamic thin film model. Models (i) and (ii) are employed to discuss the formation of polygonal networks, spinodal and branched structures resulting from the dewetting of an ultrathin 'postcursor film' that remains behind a mesoscopic dewetting front. We highlight, in particular, the presence of a transverse instability in the evaporative dewetting front, which results in highly branched fingering structures. The subtle interplay of decomposition in the film and contact line motion is discussed. Finally, we discuss a simple thin film model (iii) of the hydrodynamics on the mesoscale. We employ coupled evolution equations for the film thickness profile and mean particle concentration. The model is used to discuss the self-pinning and depinning of a contact line related to the 'coffee-stain' effect. In the course of the review we discuss the advantages and limitations of the different theories, as well as possible future developments and extensions.

  17. Influence of Evaporation on Soap Film Rupture.

    Science.gov (United States)

    Champougny, Lorène; Miguet, Jonas; Henaff, Robin; Restagno, Frédéric; Boulogne, François; Rio, Emmanuelle

    2018-03-13

    Although soap films are prone to evaporate due to their large surface to volume ratio, the effect of evaporation on macroscopic film features has often been disregarded in the literature. In this work, we experimentally investigate the influence of environmental humidity on soap film stability. An original experiment allows to measure both the maximum length of a film pulled at constant velocity and its thinning dynamics in a controlled atmosphere for various values of the relative humidity [Formula: see text]. At first order, the environmental humidity seems to have almost no impact on most of the film thinning dynamics. However, we find that the film length at rupture increases continuously with [Formula: see text]. To rationalize our observations, we propose that film bursting occurs when the thinning due to evaporation becomes comparable to the thinning due to liquid drainage. This rupture criterion turns out to be in reasonable agreement with an estimation of the evaporation rate in our experiment.

  18. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  19. Effects of solvent evaporation conditions on solvent vapor annealed cylinder-forming block polymer thin films

    Science.gov (United States)

    Grant, Meagan; Jakubowski, William; Nelson, Gunnar; Drapes, Chloe; Baruth, A.

    Solvent vapor annealing is a less time and energy intensive method compared to thermal annealing, to direct the self-assembly of block polymer thin films. Periodic nanostructures have applications in ultrafiltration, magnetic arrays, or other structures with nanometer dimensions, driving its continued interest. Our goal is to create thin films with hexagonally packed, perpendicular aligned cylinders of poly(lactide) in a poly(styrene) matrix that span the thickness of the film with low anneal times and low defect densities, all with high reproducibility, where the latter is paramount. Through the use of our computer-controlled, pneumatically-actuated, purpose-built solvent vapor annealing chamber, we have the ability to monitor and control vapor pressure, solvent concentration within the film, and solvent evaporation rate with unprecedented precision and reliability. Focusing on evaporation, we report on two previously unexplored areas, chamber pressure during solvent evaporation and the flow rate of purging gas aiding the evaporation. We will report our exhaustive results following atomic force microscopy analysis of films exposed to a wide range of pressures and flow rates. Reliably achieving well-ordered films, while occurring within a large section of this parameter space, was correlated with high-flow evaporation rates and low chamber pressures. These results have significant implications on other methods of solvent annealing, including ``jar'' techniques.

  20. The role of ultra-fast solvent evaporation on the directed self-assembly of block polymer thin films

    Science.gov (United States)

    Drapes, Chloe; Nelson, G.; Grant, M.; Wong, J.; Baruth, A.

    The directed self-assembly of nano-structures in block polymer thin films viasolvent vapor annealing is complicated by several factors, including evaporation rate. Solvent vapor annealing exposes a disordered film to solvent(s) in the vapor phase, increasing mobility and tuning surface energy, with the intention of producing an ordered structure. Recent theoretical predictions reveal the solvent evaporation affects the resultant nano-structuring. In a competition between phase separation and kinetic trapping during drying, faster solvent removal can enhance the propagation of a given morphology into the bulk of the thin film down to the substrate. Recent construction of a purpose-built, computer controlled solvent vapor annealing chamber provides control over forced solvent evaporation down to 15 ms. This is accomplished using pneumatically actuated nitrogen flow into and out of the chamber. Furthermore, in situ spectral reflectance, with 10 ms temporal resolution, monitors the swelling and evaporation. Presently, cylinder-forming polystyrene-block-polylactide thin films were swollen with 40% (by volume) tetrahydrofuran, followed by immediate evaporation under a variety of designed conditions. This includes various evaporation times, ranging from 15 ms to several seconds, and four unique rate trajectories, including linear, exponential, and combinations. Atomic force microscopy reveals specific surface, free and substrate, morphologies of the resultant films, dependent on specific evaporation conditions. Funded by the Clare Boothe Luce Foundation and Nebraska EPSCoR.

  1. Development of novel control system to grow ZnO thin films by reactive evaporation

    Directory of Open Access Journals (Sweden)

    Gerardo Gordillo

    2016-07-01

    Full Text Available This work describes a novel system implemented to grow ZnO thin films by plasma assisted reactive evaporation with adequate properties to be used in the fabrication of photovoltaic devices with different architectures. The innovative aspect includes both an improved design of the reactor used to activate the chemical reaction that leads to the formation of the ZnO compound as an electronic system developed using the virtual instrumentation concept. ZnO thin films with excellent opto-electrical properties were prepared in a reproducible way, controlling the deposition system through a virtual instrument (VI with facilities to control the amount of evaporated zinc involved in the process that gives rise to the formation of ZnO, by means of the incorporation of PID (proportional integral differential and PWM (pulse width modulation control algorithms. The effectiveness and reliability of the developed system was verified by obtaining with good reproducibility thin films of n+-ZnO and i-ZnO grown sequentially in situ with thicknesses and resistivities suitable for use as window layers in chalcopyrite based thin film solar cells.

  2. Plasma-assisted co-evaporation of {beta}-indium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kosaraju, Sreenivas; Marino, Joseph A.; Harvey, John A.; Wolden, Colin A. [Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401 (United States)

    2006-05-05

    This paper describes the development of plasma-assisted co-evaporation (PACE) for the formation of {beta}-In{sub 2}S{sub 3} thin films. Indium was supplied by conventional thermal evaporation, while the chalcogen gas precursor (H{sub 2}S) was activated using an inductively coupled plasma (ICP) source. Using a combination of optical emission spectroscopy and mass spectrometry it was shown that the ICP effectively dissociated H{sub 2}S, producing atomic sulfur. Transport modeling was used to quantify the flux distributions of the co-evaporated metal and the plasma-generated species impinging the substrate. Model predictions were validated by measurements of deposition rate and film properties. Substantial improvements in both materials utilization and substrate temperature reduction were realized with respect to conventional co-evaporation. {beta}-In{sub 2}S{sub 3} was formed as low as 100{sup o}C and it was observed that quality was a strong function of S/In ratio. The grain size decreased and the optical band gap increased as the substrate temperature was reduced. (author)

  3. Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching

    Energy Technology Data Exchange (ETDEWEB)

    Correa, Diogo S. [Universidade Federal de Pelotas (UFPel), RS (Brazil). Centro de Ciencias Quimicas, Farmaceuticas e de Alimentos; Pazinato, Julia C.O.; Freitas, Mauricio A. de; Radtke, Claudio; Garcia, Irene T.S., E-mail: irene@iq.ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil). Instituto de Quimica; Dorneles, Lucio S. [Universidade Federal de Santa Maria (UFSM), RS (Brazil). Centro de Ciencias Naturais e Exatas

    2014-05-15

    Tungsten oxides show different stoichiometries, crystal lattices and morphologies. These characteristics are important mainly when they are used as photocatalysts. In this work tungsten oxide thin films were obtained by thermal evaporation on (100) silicon substrates covered with gold and heated at 350 and 600 °C, with different deposition times. The stoichiometry of the films, morphology, crystal structure and resistance to leaching were characterized through X-ray photoelectron spectroscopy, micro-Raman spectroscopy, scanning and transmission electron microscopy, X-ray diffractometry, Rutherford backscattering spectrometry and O{sup 16} (α,α')O{sup 16} resonant nuclear reaction. Films obtained at higher temperatures show well-defined spherical nanometric structure; they are composed of WO{sub 3.1} and the presence of hydrated tungsten oxide was also observed. The major crystal structure observed is the hexagonal. Thin films obtained through thermal evaporation present resistance to leaching in aqueous media and excellent performance as photocatalysts, evaluated through the degradation of the methyl orange dye. (author)

  4. Optical band gap of ZnO thin films deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Nadeem, M. Y.; Ali, S. L.; Wasiq, M. F.; Rana, A. M.

    2006-01-01

    Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 As/sup -1/ to 15 As /sup -1/ and thickness ranging 1000A to 3000A is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15 eV, 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000A, 2000 A, 3000 A on increasing the evaporation rate from 5 As/sup-1/ to As/sup -1/ by keeping thickness constant. (author)

  5. Characterization of Cu(In,Ga)(S,Se)2 thin films prepared by sequential evaporation from ternary compounds

    International Nuclear Information System (INIS)

    Yamaguchi, T.; Hatori, M.; Niiyama, S.; Miyake, Y.

    2006-01-01

    Cu(In,Ga)(S,Se) 2 thin films were fabricated by sequential evaporation from CuGaSe 2 , CuInSe 2 and In 2 S 3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In+Ga):(S+Se) atomic ratio in all thin films was approximately 1:1:2. As the [In 2 S 3 ]/([CuGaSe 2 ]+[CuInSe 2 ]) mole ratio in the evaporating materials increased, the S/(S+Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se) 2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga)(S,Se) 2 thin films had large and columnar grains. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  6. Growth of thin fullerene films by matrix assisted pulsed laser evaporation

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    C60 fullerene thin films of average thickness of more than 100 nm on silicon substrates can be produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target of anisole with a concentration of 0.67 wt% C60. At laser fluences below 1.......5 J/cm2 the dominant fraction of the film molecules are C60 transferred to the substrate without any fragmentation. For high fluences high-resolution SEM images of MAPLE deposited films reveal large circular features on the surface with high amount of material concentrated at edges. These features......, observed over a wide range of laser fluences, are caused by ejection of large matrix-fullerene liquid droplets into the gas-phase and subsequent deposition. At similar laser energies, but using an unfocused laser beam, MAPLE favours evaporation of matrix and organic molecules, resulting in films...

  7. Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method

    International Nuclear Information System (INIS)

    Zribi, M.; Rabeh, M. Ben; Brini, R.; Kanzari, M.; Rezig, B.

    2006-01-01

    Structural, morphological and optical properties of Sn-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 deg. C for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 deg. C. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS 2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS 2 thin films exhibit N-type conductivity after annealing

  8. Layered double hydroxides/polymer thin films grown by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R.; Matei, A.; Mitu, B.; Ionita, M.D.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest–Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Corobea, M.C. [National R. and S. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021, Bucharest (Romania)

    2013-09-30

    Due to their highly tunable properties, layered double hydroxides (LDHs) are an emerging class of the favorably layered crystals used for the preparation of multifunctional polymer/layered crystal nanocomposites. In contrast to cationic clay materials with negatively charge layers, LDHs are the only host lattices with positively charged layers (brucite-like), with interlayer exchangeable anions and intercalated water. In this work, the deposition of thin films of Mg and Al based LDH/polymers nanocomposites by laser techniques is reported. Matrix assisted pulsed laser evaporation was the method used for thin films deposition. The Mg–Al LDHs capability to act as a host for polymers and to produce hybrid LDH/polymer films has been investigated. Polyethylene glycol with different molecular mass compositions and ethylene glycol were used as polymers. The structure and surface morphology of the deposited LDH/polymers films were examined by X-ray diffraction, Fourier transform infra-red spectroscopy, atomic force microscopy and scanning electron microscopy. - Highlights: • Hybrid composites deposited by matrix assisted pulsed laser evaporation (MAPLE). • Mg–Al layered double hydroxides (LDH) and polyethylene glycol (PEG) are used. • Mixtures of PEG1450 and LDH were deposited by MAPLE. • Deposited thin films preserve the properties of the starting material. • The film wettability can be controlled by the amount of PEG.

  9. Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R., E-mail: raquel.caballero@uam.es [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Izquierdo-Roca, V. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Merino, J.M.; Friedrich, E.J. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Climent-Font, A. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); CMAM, Universidad Autónoma de Madrid, C/Faraday 3, E-28049, Madrid (Spain); Saucedo, E. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Pérez-Rodríguez, A. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN" 2UB, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain); León, M. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain)

    2013-05-01

    A study of Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu{sub 2}ZnSnS{sub 4} bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu{sub 2}ZnSnS{sub 4} deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells.

  10. Preparation of anatase TiO2 thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Miyata, Toshihiro; Tsukada, Satoshi; Minami, Tadatsugu

    2006-01-01

    Anatase titanium dioxide (TiO 2 ) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO 2 pellets as the source material. Highly transparent TiO 2 thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O 2 ) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO 2 thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO 2 thin film with a resistivity of 2.6 x 10 -1 Ω cm was prepared at a substrate temperature of 400 deg. C without the introduction of O 2 gas

  11. Matrix Assisted Pulsed Laser Evaporation for growth of fullerene thin films

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster Nielsen, Søren

    C60 fullerene thin films of average thickness of more than 100 nm can be produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target of anisole with a concentration of 0.67 wt% C60. At laser fluences below 1.5 J/cm2, a dominant...... fraction of the film molecules are C60 transferred to the substrate without any fragmentation. Highresolution SEM images of MAPLE deposited films reveal large circular droplets on the surface with high amount of material concentrated at edges (Fig. 1A). These features, observed over a wide range of laser...... fluences, are caused by ejection of large matrix-fullerene liquid droplets into the gas-phase and subsequent deposition. At similar laser energies, but using an unfocused laser beam, MAPLE favours evaporation of matrix and organic molecules, resulting in production of films with smooth surfaces and minimal...

  12. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Minden 11800 Penang (Malaysia)

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  13. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    Science.gov (United States)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

    2015-04-01

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×1016 atoms/cm3) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  14. Effects of annealing on evaporated SnS thin films

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Bakar Ismail

    1994-01-01

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound

  15. Effects of annealing on evaporated SnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sakrani, Samsudi; Ismail, Bakar [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics

    1994-12-31

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound.

  16. Preparation of YBa2Cu3O7-δ epitaxial thin films by pulsed ion-beam evaporation

    International Nuclear Information System (INIS)

    Sorasit, S.; Yoshida, G.; Suzuki, T.; Suematsu, H.; Jiang, W.; Yatsui, K.

    2001-01-01

    Thin films of YBa 2 Cu 3 O 7-δ (Y-123) grown epitaxially have been successfully deposited by ion-beam evaporation (IBE). The c-axis oriented YBa 2 Cu 3 O 7-δ thin films were successfully deposited on MgO and SrTiO 3 substrates. The Y-123 thin films which were prepared on the SrTiO 3 substrates were confirmed to be epitaxially grown, by X-ray diffraction analysis. The instantaneous deposition rate of the Y-123 thin films was estimated as high as 4 mm/s. (author)

  17. Fabrication of thermally evaporated Al thin film on cylindrical PET monofilament for wearable computing devices

    Science.gov (United States)

    Liu, Yang; Kim, Eunju; Han, Jeong In

    2016-01-01

    During the initial development of wearable computing devices, the conductive fibers of Al thin film on cylindrical PET monofilament were fabricated by thermal evaporation. Their electrical current-voltage characteristics curves were excellent for incorporation into wearable devices such as fiber-based cylindrical capacitors or thin film transistors. Their surfaces were modified by UV exposure and dip coating of acryl or PVP to investigate the surface effect. The conductive fiber with PVP coating showed the best conductivities because the rough surface of the PET substrate transformed into a smooth surface. The conductivities of PET fiber with and without PVP were 6.81 × 103 Ω-1cm-1 and 5.62 × 103 Ω-1cm-1, respectively. In order to understand the deposition process of Al thin film on cylindrical PET, Al thin film on PET fiber was studied using SEM (Scanning Electron Microscope), conductivities and thickness measurements. Hillocks on the surface of conductive PET fibers were observed and investigated by AFM on the surface. Hillocks were formed and grown during Al thermal evaporation because of severe compressive strain and plastic deformation induced by large differences in thermal expansion between PET substrate and Al thin film. From the analysis of hillock size distribution, it turns out that hillocks grew not transversely but longitudinally. [Figure not available: see fulltext.

  18. Microbubble-Triggered Spontaneous Separation of Transparent Thin Films from Substrates Using Evaporable Core-Shell Nanocapsules.

    Science.gov (United States)

    Son, Intae; Lee, Byungsun; Kim, Jae Hong; Kim, Chunho; Yoo, Ji Yong; Ahn, Byung Wook; Hwang, Jeongho; Lee, Jonghyuk; Lee, Jun Hyup

    2018-05-23

    The spontaneous separation of a polymer thin film from a substrate is an innovative technology that will enable material recycling and reduce manufacturing cost in the film industry, and this can be applied in a wide range of applications, from optical films to wearable devices. Here, we present an unprecedented spontaneous strategy for separating transparent polymer films from substrates on the basis of microbubble generation using nanocapsules containing an evaporable material. The core-shell nanocapsules are prepared from poly(methyl methacrylate)-polyethyleneimine nanoparticles via the encapsulation of methylcyclohexane (MCH). A spherical nanostructure with a vaporizable core is obtained, with the heat-triggered gas release ability leading to the formation of microbubbles. Our separation method applied to transparent polymer films doped with a small amount of the nanocapsules encapsulating evaporable MCH enables spontaneous detachment of thin films from substrates via vacuum-assisted rapid vaporization of MCH over a short separation time, and clear detachment of the film is achieved with no deterioration of the inherent optical transparency and adhesive property compared to a pristine film.

  19. Photoconductivity in reactively evaporated copper indium selenide thin films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-01

    Copper indium selenide thin films of composition CuInSe2 with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe2 films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 106 cm-1 at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe2 thin films indicate its suitability in photovoltaic applications.

  20. Electrical transport properties of thermally evaporated phthalocyanine (H 2Pc) thin films

    Science.gov (United States)

    El-Nahass, M. M.; Farid, A. M.; Attia, A. A.; Ali, H. A. M.

    2006-08-01

    Thin films of H 2Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path ( lo) of charge carriers in H 2Pc thin films was attempted. Measurements of thermoelectric power confirm that H 2Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H 2Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility ( μh), the total trap concentration ( Nt), the characteristic temperature ( Tt) and the trap density P( E).

  1. Use of thin films obtained by electron beam evaporation as optical wave guide

    International Nuclear Information System (INIS)

    Nobre, S.A.A.; Oliveira, C.A.S. de; Freire, G.F.de O.

    1986-01-01

    Thin films evaporated by electron beam for the fabrication of planar optical waveguides were used. The tested materials were aluminium oxide (Al 2 O 3 ) and tantalum pentoxide (Ta 2 O 5 ). The effect of annealing conditions on the film absorption was investigated for Ta 2 O 5 . The Al 2 O 3 films were characterized by the method of guided modes, in terms of refractive index measurements and film thickness. Atenuation measurements were also carried out. (M.C.K.) [pt

  2. Preparation of anatase TiO{sub 2} thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Miyata, Toshihiro [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)]. E-mail: tmiyata@neptune.kanazawa-it.ac.jp; Tsukada, Satoshi [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan); Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

    2006-02-01

    Anatase titanium dioxide (TiO{sub 2}) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO{sub 2} pellets as the source material. Highly transparent TiO{sub 2} thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O{sub 2}) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO{sub 2} thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO{sub 2} thin film with a resistivity of 2.6 x 10{sup -1} {omega} cm was prepared at a substrate temperature of 400 deg. C without the introduction of O{sub 2} gas.

  3. Evaporation-driven instability of the precorneal tear film.

    Science.gov (United States)

    Peng, Cheng-Chun; Cerretani, Colin; Braun, Richard J; Radke, C J

    2014-04-01

    Tear-film instability is widely believed to be a signature of eye health. When an interblink is prolonged, randomly distributed ruptures occur in the tear film. "Black spots" and/or "black streaks" appear in 15 to 40 s for normal individuals. For people who suffer from dry eye, tear-film breakup time (BUT) is typically less than a few seconds. To date, however, there is no satisfactory quantitative explanation for the origin of tear rupture. Recently, it was proposed that tear-film breakup is related to locally high evaporative thinning. A spatial variation in the thickness of the tear-film lipid layer (TFLL) may lead to locally elevated evaporation and subsequent tear-film breakup. We examine the local-evaporation-driven tear-film-rupture hypothesis in a one-dimensional (1-D) model for the evolution of a thin aqueous tear film overriding the cornea subject to locally elevated evaporation at its anterior surface and osmotic water influx at its posterior surface. Evaporation rate depends on mass transfer both through the coating lipid layer and through ambient air. We establish that evaporation-driven tear-film breakup can occur under normal conditions but only for higher aqueous evaporation rates. Predicted roles of environmental conditions, such as wind speed and relative humidity, on tear-film stability agree with clinical observations. More importantly, locally elevated evaporation leads to hyperosmolar spots in the tear film and, hence, vulnerability to epithelial irritation. In addition to evaporation rate, tear-film instability depends on the strength of healing flow from the neighboring region outside the breakup region, which is determined by the surface tension at the tear-film surface and by the repulsive thin-film disjoining pressure. This study provides a physically consistent and quantitative explanation for the formation of black streaks and spots in the human tear film during an interblink. Copyright © 2013 Elsevier B.V. All rights reserved.

  4. Cuinse2 Thin Film For Solar Cell By Flash Evaporation

    OpenAIRE

    A.H. Soepardjo

    2009-01-01

    Deposition of thin films for material solar cell CuInSe2 are relatively simple. In this research mainly focused on the use of flash evaporation method, and the material created can then be characterized by optical and electrical properties. The optical characterization is done by X-ray Diffraction (XRD), Energy Dispersive Spectroscopy (EDS), and transmission and reflection by UV-VIS spectrophotometry. Electrical characterization is done by utilizing the Hall effect equipment. From these chara...

  5. Thermogravimetric analysis of fuel film evaporation

    Institute of Scientific and Technical Information of China (English)

    HU Zongjie; LI Liguang; YU Shui

    2006-01-01

    Thermogravimetric analysis (TGA) was compared with the petrochemical distillation measurement method to better understand the characteristics of fuel film evaporation at different wall tem- peratures. The film evaporation characteristics of 90# gasoline, 93# gasoline and 0# diesel with different initial thicknesses were investigated at different environmental fluxes and heating rates. The influences of heating rate, film thickness and environmental flux on fuel film evaporation for these fuels were found. The results showed that the environmental conditions in TGA were similar to those for fuel films in the internal combustion engines, so data from TGA were suitable for the analysis of fuel film evaporation. TGA could simulate the key influencing factors for fuel film evaporation and could investigate the basic quantificational effect of heating rate and film thickness. To get a rapid and sufficient fuel film evaporation, sufficiently high wall temperature is necessary. Evaporation time decreases at a high heating rate and thin film thickness, and intense gas flow is important to promoting fuel film evaporation. Data from TGA at a heating rate of 100℃/min are fit to analyze the diesel film evaporation during cold-start and warming-up. Due to the tense molecular interactions, the evaporation sequence could not be strictly divided according to the boiling points of each component for multicomponent dissolved mixture during the quick evaporation process, and the heavier components could vaporize before reaching their boiling points. The 0# diesel film would fully evaporate when the wall temperature is beyond 250℃.

  6. STUDI EKSPERIMENTAL FALLING FILM EVAPORATOR PADA EVAPORASI NIRA KENTAL

    Directory of Open Access Journals (Sweden)

    Medya Ayunda Fitri

    2016-06-01

    Full Text Available Falling film evaporator is a constructed equipment for concentrating dilute solution that are sensitive to heat flowing form a thin film. This research aims to study the evaporation of cane juice concentrated with air flow on falling film evaporator and knowing evaporation rate occured in falling film evaporator used. In the process, cane juice from plant pumped to the falling film evaporator that used in this experiment. This research used concentrated cane juice and air flow rate for variables of this experiment. Cane juice flow from top of evaporator through distributor to form thin film and air flow from the bottom of evaporator. After that, temperatur of pipe wall, inlet and outlet temperature of cane juice and air were measured. This experiment concluded that the highest concentration of outlet solution is 59 brix for liquid flow rate 154 l/h and air flow rate 10 m3/h, and the other hand inlet solution concentration 51 brix. Optimum evaporation rate is 35 kg/m2.h for 51 brix and air flow rate 10 m3/h.

  7. Electron-gun Evaporation of Cu and In thin Films as Precursors for CuInSe, Formation

    International Nuclear Information System (INIS)

    Caballero, R.; Guillen, C.

    2001-01-01

    In the present invigorations CuInSe, is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm 2 , and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs

  8. Effect of thermal annealing on structural properties of SrGa2S4:Ce thin films prepared by flash evaporation

    International Nuclear Information System (INIS)

    Gambarov, E.F.; Bayramov, A.I.

    2009-01-01

    In the present report the preparation technology and structural characterization of Ce 3 +activated SrGa 2 S 4 thin films are given. SrGa 2 S 4 : e thin films are prepared by so called flash evaporation which is simple and inexpensive method for thin film deposition. X-ray diffraction shows that the as deposited films exhibit amorphous behavior, but after annealing in H S stream, the polycrystalline one. EPMA results indicate nearly stoichiometric composition of the thin films

  9. Cuinse2 Thin Film For Solar Cell By Flash Evaporation

    Directory of Open Access Journals (Sweden)

    A.H. Soepardjo

    2009-11-01

    Full Text Available Deposition of thin films for material solar cell CuInSe2 are relatively simple. In this research mainly focused on the use of flash evaporation method, and the material created can then be characterized by optical and electrical properties. The optical characterization is done by X-ray Diffraction (XRD, Energy Dispersive Spectroscopy (EDS, and transmission and reflection by UV-VIS spectrophotometry. Electrical characterization is done by utilizing the Hall effect equipment. From these characterization, the atomic structure, absorption coefficient, energy gap, material type, composition of each elements and the mobility of CuInSe2 can be measured and determined. During process evaporation were carried out at substrate temperatures the range between 20ºC-415ºC.

  10. Evaporation of Sunscreen Films: How the UV Protection Properties Change.

    Science.gov (United States)

    Binks, Bernard P; Brown, Jonathan; Fletcher, Paul D I; Johnson, Andrew J; Marinopoulos, Ioannis; Crowther, Jonathan M; Thompson, Michael A

    2016-06-01

    We have investigated the evaporation of thin sunscreen films and how the light absorption and the derived sun protection factor (SPF) change. For films consisting of solutions of common UV filters in propylene glycol (PG) as solvent, we show how evaporation generally causes three effects. First, the film area can decrease by dewetting leading to a transient increase in the average film thickness. Second, the film thins by evaporative loss of the solvent. Third, precipitation of the UV filter occurs when solvent loss causes the solubility limit to be reached. These evaporation-induced changes cause the UV absorbance of the film to decrease with resultant loss of SPF over the time scale of the evaporation. We derive an approximate model which accounts semiquantitatively for the variation of SPF with evaporation. Experimental results for solutions of different UV filters on quartz, different skin mimicking substrates, films with added nanoparticles, films with an added polymer and films with fast-evaporating decane as solvent (instead of slow evaporating PG) are discussed and compared with model calculations. Addition of either nanoparticles or polymer suppress film dewetting. Overall, it is hoped that the understanding gained about the mechanisms whereby film evaporation affects the SPF will provide useful guidance for the formulation of more effective sunscreens.

  11. Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

  12. The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

    Science.gov (United States)

    Polat, B Deniz; Keles, Ozgul

    2015-12-01

    The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

  13. Realization of PbS thin films by reactive evaporation technique for possible opto-electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    A, Abhilash, E-mail: abhiltp@cusat.ac.in; Nair, Aparna S.; S, Rajasree; E, Hiba Rahman; Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022 (India)

    2015-06-24

    Stoichiometric Lead sulphide (PbS) thin films were successfully prepared on glass substrates by reactive evaporation technique. Elemental evaporation of lead and sulphur taken in different sources onto substrates held at temperature of 400±5K employed in the present study. The structural as well as compositional studies compromises compound formation. Electrical transport properties and optical co-efficient were evaluated from appropriate characterization techniques.

  14. Growth of manganese sulfide (α-MnS) thin films by thermal vacuum evaporation: Structural, morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia); Segura, Alfredo [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Maghraoui-Meherzi, Hager [Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia)

    2016-09-15

    MnS thin films have been successfully prepared by thermal evaporation method at different substrate temperatures using different masses of MnS powder. The prepared films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and UV–visible spectrophotometry. The XRD measurements show that the films crystallized in the pure α-MnS for substrate temperatures above 100 °C. The optical bandgap of thin films is found to be in the range of 3.2–3.3 eV. A factorial experimental design was used for determining the influence of the two experimental parameters on the films growth. - Highlights: • α-MnS films were deposited on glass and quartz substrates using the thermal evaporation technique. • The effect of substrate temperature on the properties of the MnS films has been studied. • The factorial design was used to determine the most influence parameters.

  15. Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

    International Nuclear Information System (INIS)

    Tariq, G.H.; Anis-ur-Rehman, M.

    2011-01-01

    The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

  16. Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

    2013-11-01

    Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

  17. Numerical study of heat and mass transfer during evaporation of a thin liquid film

    Directory of Open Access Journals (Sweden)

    Oubella M’hand

    2015-01-01

    Full Text Available A numerical study of mixed convection heat and mass transfer with film evaporation in a vertical channel is developed. The emphasis is focused on the effects of vaporization of three different liquid films having widely different properties, along the isothermal and wetted walls on the heat and mass transfer rates in the channel. The induced laminar downward flow is a mixture of blowing dry air and vapour of water, methanol or acetone, assumed as ideal gases. A two-dimensional steady state and elliptical flow model, connected with variable thermo-physical properties, is used and the phase change problem is based on thin liquid film assumptions. The governing equations of the model are solved by a finite volume method and the velocity-pressure fields are linked by SIMPLE algorithm. The numerical results, including the velocity, temperature and concentration profiles, as well as axial variations of Nusselt numbers, Sherwood number and dimensionless film evaporation rate are presented for two values of inlet temperature and Reynolds number. It was found that lower the inlet temperature and Re, the higher the induced flows cooling with respect of most volatile film. The better mass transfer rates related with film evaporation are found for a system with low mass diffusion coefficient.

  18. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Bae, J.W.; Kim, J.S.; Yeom, G.Y.

    2001-01-01

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  19. Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

    2015-06-24

    Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

  20. Processing of C60 thin films by Matrix-Assisted Pulsed Laser Evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    2011-01-01

    Thin films of fullerenes (C60) were deposited onto silicon using matrix-assisted pulsed laser evaporation (MAPLE). The deposition was carried out from a frozen homogeneous dilute solution of C60 in anisole (0.67 wt%), and over a broad range of laser fluences, from 0.15 J/cm2 up to 3.9 J/cm2. MAPLE...

  1. Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Aksu, S. [SoloPower, Inc., 5981 Optical Ct., San Jose, CA 95138 (United States); Bacaksiz, E., E-mail: eminb@ktu.edu.tr [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Parlak, M. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Yilmaz, S.; Polat, I.; Altunbas, M. [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Tuerksoy, M.; Topkaya, R. [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey); Ozdogan, K. [Department of Physics, Yildiz Technical University, 34210 Istanbul (Turkey)

    2011-10-17

    Highlights: {yields} Cadmium sulphide thin films were deposited by vacuum evaporation. {yields} Elemental Mn was deposited onto CdS thin films by using electron beam evaporation and annealed under vacuum at different temperatures. {yields} Structural, optical and magnetic studies of Mn-doped CdS have been investigated. {yields} X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. {yields} Magnetic measurements show that Mn-doped CdS thin films exhibit a ferromagnetism behavior at room temperature. - Abstract: The effect of Mn-doping on the vacuum deposited CdS thin films has been investigated by studying the changes in the structural, optical and magnetic properties of the films. A thin Mn layer evaporated on the CdS film surface served as the source layer for the diffusion doping. Doping was accomplished by annealing the CdS/Mn stack layers at the temperature range from 300 deg. C to 400 deg. C in step of 50 deg. C for 30 min under vacuum. The X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. The incorporation of Mn did not cause any change in the texture but reduced the peak intensity and lead to a smaller crystallite size. Investigation of surface morphology using atomic force microscopy confirmed the decrease in the grain size with the Mn diffusion. In addition, a more uniform grain size distribution was observed in the doped films. X-ray photoelectron spectroscopy analysis showed that Mn atoms on the surface of the films were bounded to either sulphur or oxygen atoms. Auger electron spectroscopy of the diffusion-doped CdS sample at 350 deg. C indicated that the atomic Mn concentration was higher close to the surface region and Mn was distributed with a steadily decreasing profile through the bulk of the film with an average atomic concentration value around few

  2. Vacuum Pumping Performance Comparison of Non-Evaporable Getter Thin Films Deposited Using Argon and Krypton as Sputtering Gases

    CERN Document Server

    Liu, Xianghong; He, Yun; Li, Yulin

    2005-01-01

    Owing to the outstanding vacuum performance and the low secondary electron yield, non-evaporable getter (NEG) thin film deposited onto interior walls has gained widespread acceptance and has been incorporated into many accelerator vacuum system designs. The titanium-zirconium-vanadium (T-Zr-V) NEG thin films were deposited onto the interior wall of stainless steel pipes via DC magnetron sputtering method using either argon or krypton gas as sputtering gas. Vacuum pumping evaluation tests were carried out to compare vacuum pumping performances of the Ti-Zr-V NEG thin films deposited using argon or krypton. The results showed much higher initial pumping speed for the Kr-sputtered NEG film than the Ar-sputtered film, though both films have similar activation behavior. The compositions and textures of both thin films were measured to correlate to the pumping performances.

  3. Surface morphology of thin lysozyme films produced by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Pryds, Nini

    2007-01-01

    Thin films of the protein, lysozyme, have been deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. Frozen targets of 0.3-1.0 wt.% lysozyme dissolved in ultrapure water were irradiated by laser light at 355 mn with a fluence of 2 J/cm(2). The surface quality of the thin....... The concentration of lysozyme in the ice matrix apparently does not play any significant role for the morphology of the film. The morphology obtained with MAPLE has been compared with results for direct laser irradiation of a pressed lysozyme sample (i.e. pulsed laser deposition (PLD)). (C) 2007 Elsevier B.V. All...

  4. Functionalized porphyrin conjugate thin films deposited by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Iordache, S. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, A.C.; Popescu, C.E.; Dorcioman, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Ciucu, A.A. [University of Bucharest, Faculty of Chemistry, Bucharest (Romania); Balan, A.; Stamatin, I. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, M. Viteazul Ave. 24, 300223-Timisoara (Romania); Chrisey, D.B. [Tulane University, Departments of Physics and Biomedical Engineering, New Orleans, LA 70118 (United States)

    2013-08-01

    We report on the deposition of nanostructured porphyrin-base, 5(4-carboxyphenyl)-10,15,20-tris(4-phenoxyphenyl)-porphyrin thin films by matrix assisted pulsed laser evaporation onto silicon substrates with screen-printed electrodes. AFM investigations have shown that at 400 mJ/cm{sup 2} fluence a topographical transition takes place from the platelet-like stacking porphyrin-based nanostructures in a perpendicular arrangement to a quasi-parallel one both relative to the substrate surface. Raman spectroscopy has shown that the chemical structure of the deposited thin films is preserved for fluences within the range of 200–300 mJ/cm{sup 2}. Cyclic voltammograms have demonstrated that the free porphyrin is appropriate as a single mediator for glucose in a specific case of screen-printed electrodes, suggesting potential for designing a new class of biosensors.

  5. Chemical states and optical properties of thermally evaporated Ge-Te and Ge-Sb-Te amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Singh, D.; Shandhu, S. [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India)

    2012-07-15

    Thin amorphous films of Ge{sub 22}Sb{sub 22}Te{sub 56} and Ge{sub 50}Te{sub 50} have been prepared from their respective polycrystalline bulk on glass substrates by thermal evaporation technique. The amorphous nature of the films was checked with X-ray diffraction studies. Amorphous-to-crystalline transition of the films has been induced by thermal annealing and the structural phases have been identified by X-ray diffraction. The phase transformation temperature of the films was evaluated by temperature dependent sheet resistance measurement. The chemical structure of the amorphous films has been investigated using X-ray photoelectron spectroscopy and the role of Sb in phase change Ge{sub 22}Sb{sub 22}Te{sub 56} film is discussed. Survey and core level (Ge 3d, Te 3d, Te 4d, Sb 3p, Sb 3d, O 1s, C 1s) band spectra has been recorded and analyzed. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-vis-NIR spectroscopy. The optical band gap, refractive index and extinction coefficient are also presented for thermally evaporated amorphous thin films.

  6. Magnetic anisotropy in iron thin films evaporated under ultra-high vacuum

    International Nuclear Information System (INIS)

    Dinhut, J.F.; Eymery, J.P.; Krishnan, R.

    1992-01-01

    α-iron thin films with thickness ranging between 20 and 1500 nm have been evaporated using an electron gun under ultra-high vacuum conditions (5.10 -7 P). The columnar structure observed in cross-sectional TEM is related to the large surface diffusion. From Moessbauer spectra the spin orientation is deduced and found to be influenced by the column axis. Spins can be obtained perpendicularly to the film plane by rotating the substrte during the deposition. The magnetization of the samples is reduced by about 30% and the reduction attributed to the interstitial space which increases with the incident angle. The substrate rotation also decreases Ku( parallel ) by a factor 2 and increases Ku( perpendicular to ). (orig.)

  7. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-01-01

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

  8. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-09-02

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

  9. Real-time kinetic modeling of YSZ thin film roughness deposited by e-beam evaporation technique

    International Nuclear Information System (INIS)

    Galdikas, A.; Cerapaite-Trusinskiene, R.; Laukaitis, G.; Dudonis, J.

    2008-01-01

    In the present study, the process of yttrium-stabilized zirconia (YSZ) thin films deposition on optical quartz (SiO 2 ) substrates using e-beam deposition technique controlling electron gun power is analyzed. It was found that electron gun power influences the non-monotonous kinetics of YSZ film surface roughness. The evolution of YSZ thin film surface roughness was analyzed by a kinetic model. The model is based on the rate equations and includes processes of surface diffusion of the adatoms and the clusters, nucleation, growth and coalescence of islands in the case of thin film growth in Volmer-Weber mode. The analysis of the experimental results done by modeling explains non-monotonous kinetics and dependence of the surface roughness on the electron gun power. A good quantitative agreement with experimental results is obtained taking into account the initial roughness of the substrate surface and the amount of the clusters in the flux of evaporated material.

  10. Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2011-05-19

    Highlights: > In this work, thin films of CuIn{sub 5}S{sub 8} were successfully deposited onto glass substrates by thermal evaporation and annealed in air. > Post-depositional annealing effects on structural, optical and electrical properties of thermal evaporated CuIn{sub 5}S{sub 8} thin films were studied. > The results reported in this work make this material attractive as an absorber material in solar cells applications. - Abstract: Stoichiometric compound of copper indium sulfur (CuIn{sub 5}S{sub 8}) was synthesized by direct reaction of high purity elemental copper, indium and sulfur in an evacuated quartz tube. The phase structure of the synthesized material revealed the cubic spinel structure. The lattice parameter (a) of single crystals was calculated to be 10.667 A. Thin films of CuIn{sub 5}S{sub 8} were deposited onto glass substrates under the pressure of 10{sup -6} Torr using thermal evaporation technique. CuIn{sub 5}S{sub 8} thin films were then thermally annealed in air from 100 to 300 deg. C for 2 h. The effects of thermal annealing on their physico-chemical properties were investigated using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), optical transmission and hot probe method. XRD studies of CuIn{sub 5}S{sub 8} thin films showed that as-deposited films were amorphous in nature and transformed into polycrystalline spinel structure with strong preferred orientation along the (3 1 1) plane after the annealing at 200 deg. C. The composition is greatly affected by thermal treatment. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 4} cm{sup -1} was found. As increasing the annealing temperature, the optical energy band gap decreases from 1.83 eV for the as-deposited films to 1.43 eV for the annealed films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 300 deg. C.

  11. Magnetic field and temperature dependent measurements of hall coefficient in thermal evaporated Tin-Doped Cadmium Oxide Thin films

    International Nuclear Information System (INIS)

    Hamadi, O.; Shakir, N.; Mohammed, F.

    2010-01-01

    CdO:Sn thin films are deposited onto glass substrates by thermal evaporation under vacuum. The studied films are polycrystalline and have an NaCl structure. The Hall effect is studied for films with different thickness as substrates are maintained at different temperatures. The temperature dependence of the Hall mobility is also investigated. (authors)

  12. In{sub 6}Se{sub 7} thin films by heating thermally evaporated indium and chemical bath deposited selenium multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Ornelas, R.E.; Avellaneda, D. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Shaji, S. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico); Castillo, G.A.; Roy, T.K. Das [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico)

    2012-05-15

    Indium selenide (In{sub 6}Se{sub 7}) thin films were prepared via selenization of thermally evaporated indium thin films by dipping in sodium selenosulphate solution followed by annealing in nitrogen atmosphere. First, indium was thermally evaporated on glass substrate. Then, the indium coated glass substrates were dipped in a solution containing 80 ml 0.125 M sodium selenosulphate and 1.5 ml dilute acetic acid (25%) for 5 min. Glass/In-Se layers were annealed at 200-400 Degree-Sign C in nitrogen atmosphere (0.1 Torr) for 30 min. X-ray diffraction studies showed the formation of monoclinic In{sub 6}Se{sub 7}. Morphology of the thin films formed at different conditions was analyzed using Scanning electron microscopy. The elemental analysis was done using Energy dispersive X-ray detection. Electrical conductivity under dark and illumination conditions was evaluated. Optical band gap was computed using transmittance and reflectance spectra. The band gap value was in the range 1.8-2.6 eV corresponding to a direct allowed transition. We studied the effect of indium layer thickness and selenium deposition time on the structure, electrical and optical properties of In{sub 6}Se{sub 7} thin films.

  13. Physical properties of very thin SnS films deposited by thermal evaporation

    International Nuclear Information System (INIS)

    Cheng Shuying; Conibeer, Gavin

    2011-01-01

    SnS films with thicknesses of 20–65 nm have been deposited on glass substrates by thermal evaporation. The physical properties of the films were investigated using X-ray diffraction (XRD), scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and ultraviolet–visible-near infrared spectroscopy at room temperature. The results from XRD, XPS and Raman spectroscopy analyses indicate that the deposited films mainly exhibit SnS phase, but they may contain a tiny amount of Sn 2 S 3 . The deposited SnS films are pinhole free, smooth and strongly adherent to the surfaces of the substrates. The color of the SnS films changes from pale yellow to brown with the increase of the film thickness from 20 nm to 65 nm. The very smooth surfaces of the thin films result in their high reflectance. The direct bandgap of the films is between 2.15 eV and 2.28 eV which is much larger than 1.3 eV of bulk SnS, this is deserving to be investigated further.

  14. Use of a thin-film evaporator for bitumen coating of radioactive concentrates

    International Nuclear Information System (INIS)

    Lefillatre, G.; Rodier, J.; Hullo, R.; Cudel, Y.; Rodi, L.

    1969-01-01

    Following the development in the laboratory of a process for coating evaporation concentrates with bitumen, a technological study of this coating process has been undertaken. The report describes a pilot installation for the bitumen coating of concentrates, which uses a thin-film evaporator LUWA L 150. The first, inactive series of tests was designed to determine the maximum and optimum capacities of the evaporator by varying the amounts of bitumen and of concentrate, the rotor speed and the thermo-fluid temperature. Two rotors were tested, one of conventional type, the other a model especially designed for high viscosity products. The maximum capacity of evaporation of the apparatus is 72 kg/hr for a heating temperature of 221 deg. C. During normal operation, the evaporator can produce 50 kg/hr of coated product containing 55 to 60 per cent of bitumen (Mexphalte 40/50), the water content of the product remaining under 0.5 per cent. A second series of tests will shortly be carried out on this pilot installation using, in particular, bituminous emulsions containing mainly Mexphalte 40/50 and 80/100. (authors) [fr

  15. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Palla-Papavlu, A., E-mail: apalla@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Rusen, L.; Dinca, V.; Filipescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Lippert, T. [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania)

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm{sup 2} the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  16. Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

    Science.gov (United States)

    Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

    2014-05-01

    In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

  17. Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

    Science.gov (United States)

    Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

    2017-03-01

    Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

  18. Thin films of preparation SnOx by evaporation and pulverization reactive in vapor phase

    International Nuclear Information System (INIS)

    Solis, J.; Estrada, W.; Soares, M.; Schreiner, W.

    1993-01-01

    In this work we obtained SnO x thin films by reactive evaporation. The structure and composition of the films were characterized by x-ray diffraction and Moessbauer spectroscopy. The samples as deposited present different kind of microstructures depending on the parameters deposition, such as substrate temperature and oxygen pressure. In general the samples present three pushes: Sn, SnO and SnO 2 . When the samples are subjected to heat treatment, the as deposited SnO x finally converts to SnO 2 . (authors) 10 refs., 4 figs

  19. Enhanced Charge Extraction of Li-Doped TiO₂ for Efficient Thermal-Evaporated Sb₂S₃ Thin Film Solar Cells.

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-02-28

    We provided a new method to improve the efficiency of Sb₂S₃ thin film solar cells. The TiO₂ electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb₂S₃ solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO₂ films. Compared with the undoped TiO₂, Li-doped mesoporous TiO₂ dramatically improved the photo-voltaic performance of the thermal-evaporated Sb₂S₃ thin film solar cells, with the average power conversion efficiency ( PCE ) increasing from 1.79% to 4.03%, as well as the improved open-voltage ( V oc ), short-circuit current ( J sc ) and fill factors. The best device based on Li-doped TiO₂ achieved a power conversion efficiency up to 4.42% as well as a V oc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb₂S₃ solar cells. This study showed that Li-doping on TiO₂ can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb₂S₃-based solar cells.

  20. Duplex Tear Film Evaporation Analysis.

    Science.gov (United States)

    Stapf, M R; Braun, R J; King-Smith, P E

    2017-12-01

    Tear film thinning, hyperosmolarity, and breakup can cause irritation and damage to the human eye, and these form an area of active investigation for dry eye syndrome research. Recent research demonstrates that deficiencies in the lipid layer may cause locally increased evaporation, inducing conditions for breakup. In this paper, we explore the conditions for tear film breakup by considering a model for tear film dynamics with two mobile fluid layers, the aqueous and lipid layers. In addition, we include the effects of osmosis, evaporation as modified by the lipid, and the polar portion of the lipid layer. We solve the system numerically for reasonable parameter values and initial conditions and analyze how shifts in these cause changes to the system's dynamics.

  1. The preparation of Nb3Ge thin film superconductors in a UHV evaporation and sputter device

    International Nuclear Information System (INIS)

    Krevet, B.; Schauer, W.; Wuechner, F.

    1978-10-01

    Thin film techniques like evaporation or sputtering are remarkbly suitable to vary the metallurgical and physical properties of superconductors in a wide range. In the case of the A15-compound Nb 3 Ge only these preparation techniques allow us to produce a metastable pure phase in stoichiometric composition and to study its superconducting properties. The presen report describes two UHV-plants to produce superconducting films by multisource coevaporation and cosputtering. Of special importance are the constancy, monitoring and control of the evaporation rate, and the thermalization of the sputter components on the other hand. The experimental methods used are explained in detail and discussed together with the results of Nb 3 Ge films. With the preparation parameters suitably chosen both techniques allow to prepare reproducibly Nb 3 Ge films with 21 K transition temperature (onset); under optimized conditions Tc values up to 22.3 K have been reached. (orig.) [de

  2. Electrical transport properties of MoO3 thin films prepared by laser assisted evaporation

    International Nuclear Information System (INIS)

    Lopez-Carreno, L.D.; Pardo, A.; Zuluaga, M.; Torres, J.; Alfonso, J.E.; Cortes-Bracho, O.L.

    2007-01-01

    In the present paper the growth of MoO 3 thin films on common glass substrates are described. The films were prepared by evaporation of a MoO 3 target with a CO 2 laser (10.6 μm), operating in the continuous wave mode. The effect of substrate temperature on the crystallographic structure and electrical properties of MoO 3 thin films was studied. The chemical composition of the different species formed on the films surface was obtained by X-ray photoelectron spectroscopy (XPS) and the crystalline structure was studied with X-ray diffraction (XRD). The electrical conductivity of the films was determined using the standard four-points method. Conductivity of the films varied from de 10 -9 to 10 -5 (Ωcm) -1 in the 300-600 K temperature range. Arrhenius-type plots for the electrical conductivity indicate the presence of at least two different conduction mechanisms. The I-V characteristic curve shows an ohmic behavior only in the 4.5-60 V range. Outside this interval the I-V curve has a behavior described by a power law. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Uniform thin films of TiO2 nanoparticles deposited by matrix-assisted pulsed laser evaporation

    International Nuclear Information System (INIS)

    Caricato, A.P.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Tunno, T.; Valerini, D.

    2007-01-01

    We report morphological and optical properties of a colloidal TiO 2 nanoparticle film, deposited on a quartz substrate by using the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Atomic Force Microscopy demonstrated that a good uniformity of the deposition can be obtained. The presence of agglomerates with dimensions of about 1 μm in size was noticed. Form UV-vis transmission spectra, recorded in the 200-800 nm range, the optical constants and the energy gap were determined besides the film thickness. The optical constants resulted in agreement with the values reported in literature for TiO 2 nanoparticle thin films

  4. Fabrication and characterization of In2S3 thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Timoumi, A.; Bouzouita, H.; Kanzari, M.; Rezig, B.

    2005-01-01

    Indium sulphide, In 2 S 3 , thin films present an alternative to conventional CdS films as buffer layer for CIS-based thin film solar cells. The objective is to eliminate toxic cadmium for environmental reasons. Indium sulphide is synthesized and deposited by single source vacuum thermal evaporation method on glass substrates. The films are analyzed by X-ray diffraction (XRD) and spectrophotometric measurements. They have a good crystallinity, homogeneity and adhesion. The X-ray diffraction analysis confirmed the initial amorphous nature of the deposited InS film and phase transition into crystalline In 2 S 3 formed upon annealing at free air for 250 deg. C substrate temperature for 2 h. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range of 300-1800 nm. We note that the films annealed at 250 deg. C for 2 h show a good homogeneity with 80% transmission. An analysis of the optical absorption data of the deposited films revealed an optical direct band gap energy in the range of 2.0-2.2 eV

  5. The anomalous low temperature resistivity of thermally evaporated α-Mn thin film

    International Nuclear Information System (INIS)

    Ampong, F.K.; Boakye, F.; Nkum, R.K.

    2010-01-01

    Electrical resistivity measurements have been carried out on thermally evaporated α-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10 -6 Torr. The results show a resistance minimum, a notable characteristic of α-Mn but at a (rather high) temperature of 194±1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 μΩm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

  6. The anomalous low temperature resistivity of thermally evaporated alpha-Mn thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ampong, F.K., E-mail: kampxx@yahoo.co [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana); Boakye, F.; Nkum, R.K. [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana)

    2010-08-15

    Electrical resistivity measurements have been carried out on thermally evaporated alpha-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10{sup -6} Torr. The results show a resistance minimum, a notable characteristic of alpha-Mn but at a (rather high) temperature of 194+-1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 muOMEGAm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

  7. Thermally evaporated thin films of SnS for application in solar cell devices

    International Nuclear Information System (INIS)

    Miles, Robert W.; Ogah, Ogah E.; Zoppi, Guillaume; Forbes, Ian

    2009-01-01

    SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS 2 , Sn 2 S 3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto glass and SnO 2 :coated glass substrates with the aim of optimising the properties of the material for use in photovoltaic solar cell device structures. In particular the effects of source temperature, substrate temperature, deposition rate and film thickness on the chemical and physical properties of the layers were investigated. Energy dispersive X-ray analysis was used to determine the film composition, X-ray diffraction to determine the phases present and structure of each phase, transmittance and reflectance versus wavelength measurements to determine the energy bandgap and scanning electron microscopy to observe the surface topology and topography and the properties correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free, conformal to the substrate and that consist of densely packed columnar grains. The composition, phases present and the optical properties of the layers deposited were found to be highly sensitive to the deposition conditions. Energy bandgaps in the range 1.55 eV-1.7 eV were obtained for a film thickness of 0.8 μm, and increasing the film thickness to > 1 μm resulted in a reduction of the energy bandgap to less than 1.55 eV. The applicability of using these films in photovoltaic solar cell device structures is also discussed.

  8. Synthesis and characterisation of co-evaporated tin sulphide thin films

    Science.gov (United States)

    Koteeswara Reddy, N.; Ramesh, K.; Ganesan, R.; Ramakrishna Reddy, K. T.; Gunasekhar, K. R.; Gopal, E. S. R.

    2006-04-01

    Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 μm. The films showed an electrical resistivity of 6.1 Ω cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (>104 cm-1) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.

  9. Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films

    DEFF Research Database (Denmark)

    Sarkar, I.; Laux, M.; Demokritova, J.

    2010-01-01

    We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemission spectroscopy and electronic structure calculations show that the growth...... of TTF-TCNQ films is accompanied by the unfavorable presence of neutral TTF and TCNQ molecules. The quality of the films can be controlled by tuning the evaporation temperature of the precursor in physical vapor deposition method....

  10. Substrate dependent physical properties of evaporated CdO thin films for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Purohit, Anuradha; Chander, S.; Patel, S.L. [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India); Rangra, K.J. [Sensors and Transducers Group, CSIR-CEERI, Pilani-333031 (India); Dhaka, M.S., E-mail: msdhaka75@yahoo.co.in [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India)

    2017-06-15

    Highlights: • Substrate dependent physical properties of CdO thin films are carried out. • XRD patterns reveal that the films have cubic structure of space group Fm3m. • Optical direct band gap is found to vary with the substrates. • SEM images show that the films are compact and homogeneous. • I–V characteristics show ohmic behavior of the deposited CdO films. - Abstract: In this study, CdO thin films were grown by e-beam evaporation technique on glass, indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and silicon (Si) wafer. The deposited films were analyzed by X-ray diffraction (XRD), UV–Vis spectrophotometer, scanning electron microscopy, energy dispersive spectroscopy (EDS) and source meter (current–voltage) for structural, optical, surface morphological, elemental and electrical analysis, respectively. The films have single phase of cubic structure (space group Fm3m) with (200) preferred orientation. The structural parameters viz. inter-planar spacing, grain size, lattice constant, internal strain and dislocation density are calculated and found to vary with the nature of the substrates. The optical band gap was found in the range 2.24–3.95 eV and strongly dependents on the substrates. The SEM analysis shows that the films are compact, homogeneous and have granular structure without any defects like pin holes and cracks. The EDS spectra confirmed the presence of cadmium (Cd) and oxygen (O) in the films deposited on different substrates. The current–voltage characteristics of the films show ohmic behavior.

  11. Nonlinear optical studies on 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    Energy Technology Data Exchange (ETDEWEB)

    Matei, Andreea [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Marinescu, Maria, E-mail: maria.marinescu@chimie.unibuc.ro [UB - University of Bucharest, Faculty of Chemistry, 90-92 Şoseaua Panduri, Sector 5, RO-010184, Bucharest (Romania); Constantinescu, Catalin, E-mail: catalin.constantinescu@inflpr.ro [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Ion, Valentin; Mitu, Bogdana [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Ionita, Iulian [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); UB - University of Bucharest, Faculty of Physics, 405 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Dinescu, Maria [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Emandi, Ana [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); UB - University of Bucharest, Faculty of Chemistry, 90-92 Şoseaua Panduri, Sector 5, RO-010184, Bucharest (Romania)

    2016-06-30

    Graphical abstract: - Highlights: • A newly synthesized ferrocene-derivative exhibits SHG potential. • Matrix-assisted pulsed laser evaporation is employed for thin film fabrication. • The optical properties of the films are investigated, presented and discussed. • At maximum laser output power, the SHG signal is strongly influenced by thin film thickness. - Abstract: We present results on a new, laboratory synthesized ferrocene-derivative, i.e. 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid. Thin films with controlled thickness are deposited by matrix-assisted pulsed laser evaporation (MAPLE), on quartz and silicon substrates, with the aim of evaluating the nonlinear optical properties for potential optoelectronic applications. Dimethyl sulfoxide was used as matrix, with 1% wt. concentration of the guest compound. The frozen target is irradiated by using a Nd:YAG laser (4ω/266 nm, 7 ns pulse duration, 10 Hz repetition rate), at low fluences ranging from 0.1 to 1 J/cm{sup 2}. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are used to probe the surface morphology of the films. Fourier transform infrared (FTIR) and Raman spectroscopy reveal similar structure of the thin film material when compared to the starting material. The optical properties of the thin films are investigated by spectroscopic-ellipsometry (SE), and the refractive index dependence with respect to temperature is studied. The second harmonic generation (SHG) potential is assessed by using a femtosecond Ti:sapphire laser (800 nm, 60–100 fs pulse duration, 80 MHz repetition rate), at 200 mW maximum output power, revealing that the SHG signal intensity is strongly influenced by the films’ thickness.

  12. Improved Adhesion of Gold Thin Films Evaporated on Polymer Resin: Applications for Sensing Surfaces and MEMS

    Directory of Open Access Journals (Sweden)

    Behrang Moazzez

    2013-05-01

    Full Text Available We present and analyze a method to improve the morphology and mechanical properties of gold thin films for use in optical sensors or other settings where good adhesion of gold to a substrate is of importance and where controlled topography/roughness is key. To improve the adhesion of thermally evaporated gold thin films, we introduce a gold deposition step on SU-8 photoresist prior to UV exposure but after the pre-bake step of SU-8 processing. Shrinkage and distribution of residual stresses, which occur during cross-linking of the SU-8 polymer layer in the post-exposure baking step, are responsible for the higher adhesion of the top gold film to the post-deposition cured SU-8 sublayer. The SU-8 underlayer can also be used to tune the resulting gold film morphology. Our promoter-free protocol is easily integrated with existing sensor microfabrication processes.

  13. Solid phase crystallized polycrystalline thin-films on glass from evaporated silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Song Dengyuan; Inns, Daniel; Straub, Axel; Terry, Mason L.; Campbell, Patrick; Aberle, Armin G.

    2006-01-01

    Polycrystalline silicon (poly-Si) thin-films are made on planar and textured glass substrates by solid phase crystallization (SPC) of in situ doped amorphous silicon (a-Si) deposited by electron-beam evaporation. These materials are referred to by us as EVA materials (SPC of evaporated a-Si). The properties of EVA poly-Si films are characterised by Raman microscopy, transmission electron microscopy, and X-ray diffraction. A narrow and symmetrical Raman peak at a wave number of about 520 cm -1 is observed for all samples, showing that the films are fully crystallized. X-ray diffraction (XRD) reveals that the films are preferentially (111)-oriented. Furthermore, the full width at half maximum of the dominant (111) XRD peaks indicates that the structural quality of the films is affected by the a-Si deposition temperature and the surface morphology of the glass substrates. A-Si deposition at 200 instead of 400 deg. C leads to an enhanced poly-Si grain size. On textured glass, the addition of a SiN barrier layer between the glass and the Si improves the poly-Si material quality. No such effect occurs on planar glass. Mesa-type solar cells are made from these EVA films on planar and textured glass. A strong correlation between the cells' current-voltage characteristics and their crystalline material quality is observed

  14. Effect of ambient hydrogen sulfide on the physical properties of vacuum evaporated thin films of zinc sulfide

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Beer Pal [Department of Physics, C.C.S. University, Meerut 250004 (India)], E-mail: drbeerpal@gmail.com; Singh, Virendra [Forensic Science Laboratory, Malviya Nagar, New Delhi 110017 (India); Tyagi, R.C.; Sharma, T.P. [Department of Physics, C.C.S. University, Meerut 250004 (India)

    2008-02-15

    Evaporated thin films of zinc sulfide (ZnS) have been deposited in a low ambient atmosphere of hydrogen sulfide (H{sub 2}S {approx}10{sup -4} Torr). The H{sub 2}S atmosphere was obtained by a controlled thermal decomposition of thiourea [CS(NH{sub 2}){sub 2}] inside the vacuum chamber. It has been observed that at elevated substrates temperature of about 200 deg. C helps eject any sulfur atoms deposited due to thermal decomposition of ZnS during evaporation. The zinc ions promptly recombine with H{sub 2}S to give better stoichiometry of the deposited films. Optical spectroscopy, X-ray diffraction patterns and scanning electron micrographs depict the better crystallites and uniformity of films deposited by this technique. These deposited films were found to be more adherent to the substrates and are pinhole free, which is a very vital factor in device fabrication.

  15. Comparative study on Pulsed Laser Deposition and Matrix Assisted Pulsed Laser Evaporation of urease thin films

    International Nuclear Information System (INIS)

    Smausz, Tomi; Megyeri, Gabor; Kekesi, Renata; Vass, Csaba; Gyoergy, Eniko; Sima, Felix; Mihailescu, Ion N.; Hopp, Bela

    2009-01-01

    Urease thin films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE) and Pulsed Laser Deposition from two types of targets: frozen water solutions of urease with different concentrations (1-10% m/v) and pure urease pellets. The fluence of the ablating KrF excimer laser was varied between 300 and 2200 mJ/cm 2 . Fourier transform infrared spectra of the deposited films showed no difference as compared to the original urease. Morphologic studies proved that the films consist of a smooth 'base' layer with embedded micrometer-sized droplets. Absorption-coefficient measurements contradicted the traditional 'absorptive matrix' model for MAPLE deposition. The laser energy was absorbed by urease clusters leading to a local heating-up and evaporation of the frozen matrix from the uppermost layer accompanied by the release of dissolved urease molecules. Significant enzymatic activity of urease was preserved only during matrix assisted transfer.

  16. Synthesis, structure and optical properties of thin films from GeS{sub 2}–In{sub 2}S{sub 3} system deposited by thermal co-evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Todorov, R., E-mail: rossen@iomt.bas.bg [Institute of Optical Materials and Technologies “Acad. J. Malinowski”, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Petkov, K. [Institute of Optical Materials and Technologies “Acad. J. Malinowski”, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Kincl, M. [Institute of Macromolecular Chemistry of Czech Academy of Science, Heyrovsky sq. 2, 162 06 Prague 6 (Czech Republic); Černošková, E. [Faculty of Chemical Technology, University of Pardubice, Studentská 84, 532 10 Pardubice (Czech Republic); Vlček, Mil.; Tichý, L. [Institute of Macromolecular Chemistry of Czech Academy of Science, Heyrovsky sq. 2, 162 06 Prague 6 (Czech Republic)

    2014-05-02

    This paper deals with the properties of the glasses and thin films from multi-component chalcogenide prepared by co-evaporation technique. The thin chalcogenide layers from GeS{sub 2}–In{sub 2}S{sub 3} system were deposited by thermal co-evaporation of GeS{sub 2} and In{sub 2}S{sub 3}. Using X-ray microanalysis it was found that the film compositions are closed to the expected ones. X-ray diffraction analysis shows that the thin films deposited by co-evaporation are amorphous. The refractive index, n and the optical band gap, E{sub g}{sup opt} were calculated from the transmittance and reflectance spectra. The thin film's structure was investigated by infrared spectroscopy. It was found that the photo-induced optical changes decrease with increase of indium content while significant thermo-induced changes in the optical properties and structure were observed at 14 at.% indium. The infrared spectra demonstrated high transmittance of the thin films in the range 4000–500 cm{sup −1}. The far-infrared spectra indicated that the indium participates in the glass network of the layers from Ge–S–In system in four coordinated InS{sub 4/2}{sup −} tetrahedral and six-coordinated InS{sub 6/2}{sup 3−} octahedral units. The changes in infrared spectra after annealing of the thin films evidence an increase of population of ethane-like S{sub 3}Ge–GeS{sub 3} units and/or structural or phase change of indium contain units. - Highlights: • The thin layers from GeS{sub 2}–In{sub 2}S{sub 3} system were deposited by thermal co-evaporation. • The photo-induced optical changes decrease with increase of indium content. • The thermo-induced changes in the optical properties and structure were investigated. • The structure of the thin films was investigated by infrared spectroscopy.

  17. Cooling of a microchannel with thin evaporating liquid film sheared by dry gas flow

    Science.gov (United States)

    Kabova, Yu O.; Kuznetsov, V. V.

    2017-11-01

    A joint motion of thin liquid film and dry gas in a microchannel is investigated numerically at different values of initial concentration of the liquid vapor in the gas phase, taking into account the evaporation process. Major factors affecting the temperature distribution in the liquid and the gas phases are as follows: transfer of heat by liquid and gas flows, heat loses due to evaporation, diffusion heat exchange. Comparisons of the numerical results for the case of the dry gas and for the case of equilibrium concentration of vapor in the gas have been carried out. It is shown that use of dry gas enhances the heat dissipation from the heater. It is found out that not only intense evaporation occurs near the heating areas, but also in both cases vapor condensation takes place below the heater in streamwise direction.

  18. Optical and Morphological Studies of Thermally Evaporated PTCDI-C8 Thin Films for Organic Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ronak Rahimi

    2013-01-01

    Full Text Available PTCDI-C8 due to its relatively high photosensitivity and high electron mobility has attracted much attention in organic semiconductor devices. In this work, thin films of PTCDI-C8 with different thicknesses were deposited on silicon substrates with native silicon dioxide using a vacuum thermal evaporator. Several material characterization techniques have been utilized to evaluate the structure, morphology, and optical properties of these films. Their optical constants (refractive index and extinction coefficient have been extracted from the spectroscopic ellipsometry (SE. X-ray reflectivity (XRR and atomic force microscopy (AFM were employed to determine the morphology and structure as well as the thickness and roughness of the PTCDI-C8 thin films. These films revealed a high degree of structural ordering within the layers. All the experimental measurements were performed under ambient conditions. PTCDI-C8 films have shown to endure ambient condition which allows pots-deposition characterization.

  19. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  20. Structural characterization of vacuum evaporated ZnSe thin films

    Indian Academy of Sciences (India)

    The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...

  1. Thickness and temperature dependence of electrical resistivity of p-type Bi0.5Sb1.5Te3 thin films prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Duan Xingkai; Yang Junyou; Zhu, W; Fan, X A; Bao, S Q

    2006-01-01

    P-type Bi 0.5 Sb 1.5 Te 3 thin films with thicknesses in the range 80-320 nm have been deposited by the flash evaporation method on glass substrates at 473 K. XRD and field emission scanning electron microscope were performed to characterize the thin films. The results show that the thin films are polycrystalline and the grain size of the thin films increases with increasing thickness of the thin films. Compositional analysis of the thin films was also carried out by energy-dispersive x-ray analysis. A near linear relationship was observed between the electrical resistivity and the inverse thickness of the annealed thin films, and it agrees with Tellier's model. Electrical resistivity of the annealed thin films was studied in the temperature range 300-350 K, and their thermal activation behaviour was characterized, the activation energy for conduction decreases with increasing thickness of the thin films

  2. Thin films for precision optics

    International Nuclear Information System (INIS)

    Araujo, J.F.; Maurici, N.; Castro, J.C. de

    1983-01-01

    The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

  3. Preparation by thermal evaporation under vacuum of thin nickel films without support

    International Nuclear Information System (INIS)

    Prugne, P.; Garin, P.; Lechauguette, G.

    1959-01-01

    This note deals with the preparation of nickel films without support by means of the technique described but using a new evaporation apparatus. In effect it was necessary, in order to obtain these nickel films, to modify the thermal evaporation conditions. An attempt to obtain a film without support after evaporation in a conventional apparatus led almost invariably to defeat. This appeared to be due to the high concentration of oxygen and of various vapors (diffusion pumps, degassing, etc.) present in the residual atmosphere of the conventional evaporation system. Reprint of a paper published in 'Le Vide, N. 74, March-April 1958, p. 82-83

  4. Application Of A Thin Film Evaporator System For Management Of Liquid High-Level Wastes At Hanford

    International Nuclear Information System (INIS)

    Tedeschi, A.R.; Wilson, R.A.

    2010-01-01

    A modular, transportable evaporator system, using thin film evaporative technology, is planned for deployment at the Hanford radioactive waste storage tank complex. This technology, herein referred to as a wiped film evaporator (WFE), will be located at grade level above an underground storage tank to receive pumped liquids, concentrate the liquid stream from 1.1 specific gravity to approximately 1.4 and then return the concentrated solution back into the tank. Water is removed by evaporation at an internal heated drum surface exposed to high vacuum. The condensed water stream will be shipped to the site effluent treatment facility for final disposal. This operation provides significant risk mitigation to failure of the aging 242-A Evaporator facility; the only operating evaporative system at Hanford maximizing waste storage. This technology is being implemented through a development and deployment project by the tank farm operating contractor, Washington River Protection Solutions (WRPS), for the Office of River Protection/Department of Energy (ORP/DOE), through Columbia Energy and Environmental Services, Inc. (Columbia Energy). The project will finalize technology maturity and install a system at one of the double-shell tank farms. This paper discusses results of pre-project pilot-scale testing by Columbia Energy and ongoing technology maturation development scope through fiscal year 2012, including planned additional pilot-scale and full-scale simulant testing and operation with actual radioactive tank waste.

  5. APPLICATION OF A THIN FILM EVAPORATOR SYSTEM FOR MANAGEMENT OF LIQUID HIGH-LEVEL WASTES AT HANFORD

    Energy Technology Data Exchange (ETDEWEB)

    TEDESCHI AR; WILSON RA

    2010-01-14

    A modular, transportable evaporator system, using thin film evaporative technology, is planned for deployment at the Hanford radioactive waste storage tank complex. This technology, herein referred to as a wiped film evaporator (WFE), will be located at grade level above an underground storage tank to receive pumped liquids, concentrate the liquid stream from 1.1 specific gravity to approximately 1.4 and then return the concentrated solution back into the tank. Water is removed by evaporation at an internal heated drum surface exposed to high vacuum. The condensed water stream will be shipped to the site effluent treatment facility for final disposal. This operation provides significant risk mitigation to failure of the aging 242-A Evaporator facility; the only operating evaporative system at Hanford maximizing waste storage. This technology is being implemented through a development and deployment project by the tank farm operating contractor, Washington River Protection Solutions (WRPS), for the Office of River Protection/Department of Energy (ORP/DOE), through Columbia Energy & Environmental Services, Inc. (Columbia Energy). The project will finalize technology maturity and install a system at one of the double-shell tank farms. This paper discusses results of pre-project pilot-scale testing by Columbia Energy and ongoing technology maturation development scope through fiscal year 2012, including planned additional pilot-scale and full-scale simulant testing and operation with actual radioactive tank waste.

  6. Effect of substrate temperature on the optical parameters of thermally evaporated Ge-Se-Te thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Pankaj, E-mail: pks_phy@yahoo.co.i [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India); Katyal, S.C. [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India)

    2009-05-01

    Thin films of Ge{sub 10}Se{sub 90-x}Te{sub x} (x = 0, 10, 20, 30, 40, 50) glassy alloys were deposited at three substrate temperatures (303 K, 363 K and 423 K) using conventional thermal evaporation technique at base pressure of {approx} 10{sup -4} Pa. X-ray diffraction results show that films deposited at 303 K are of amorphous nature while films deposited at 363 K and 423 K are of polycrystalline nature. The optical parameters, refractive index and optical gap have been derived from the transmission spectra (using UV-Vis-NIR spectrophotometer) of the thin films in the spectral region 400-1500 nm. This has been observed that refractive index values remain almost constant while the optical gap is found to decrease considerably with the increase of substrate temperature. The decrease in optical gap is explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase of substrate temperature. The optical gap has also been observed to decrease with the increase of Te content.

  7. Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

    Science.gov (United States)

    Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

    2018-01-01

    Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

  8. Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Acciarri, M.; Binetti, S.; Le Donne, A.; Lorenzi, B.; Caccamo, L.; Miglio, L. [Dipartimento di Scienza dei Materiali e Solar Energy Research Center MIB-SOLAR, Universita di Milano Bicocca, Milan (Italy); Moneta, R.; Marchionna, S.; Meschia, M. [Voltasolar s.r.l, Turate (Italy)

    2011-08-15

    In this paper we report a new method for Cu(In,Ga)Se{sub 2} deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se{sub 2} has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm{sup 2} have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Modelling the evaporation of thin films of colloidal suspensions using dynamical density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Robbins, M J; Archer, A J; Thiele, U [Department of Mathematical Sciences, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2011-10-19

    Recent experiments have shown that various structures may be formed during the evaporative dewetting of thin films of colloidal suspensions. Nanoparticle deposits of strongly branched 'flower-like', labyrinthine and network structures are observed. They are caused by the different transport processes and the rich phase behaviour of the system. We develop a model for the system, based on a dynamical density functional theory, which reproduces these structures. The model is employed to determine the influences of the solvent evaporation and of the diffusion of the colloidal particles and of the liquid over the surface. Finally, we investigate the conditions needed for 'liquid-particle' phase separation to occur and discuss its effect on the self-organized nanostructures. (paper)

  10. Temperature responsive functional polymeric thin films obtained by matrix assisted pulsed laser evaporation for cells attachment–detachment study

    Energy Technology Data Exchange (ETDEWEB)

    Rusen, L. [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-16, RO-077125 Magurele, Bucharest (Romania); Dinca, V., E-mail: dinali@nipne.ro [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-16, RO-077125 Magurele, Bucharest (Romania); Mitu, B. [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-16, RO-077125 Magurele, Bucharest (Romania); Mustaciosu, C. [Horia Hulubei National Institute of Physics and Nuclear Engineering, IFIN HH, Magurele, Bucharest (Romania); Dinescu, M. [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-16, RO-077125 Magurele, Bucharest (Romania)

    2014-05-01

    Multifunctional thin films used as thermoresponsive substrate for engineering cell sheets represent an important area in tissue engineering. As the morphology and the chemical characteristics of the thin films directly control their interaction with cells, it is important to correlate these characteristics with the biological answer. In this study, thermally sensitive poly(N-isopropylacrylamide), (pNIPAAm) thin films were prepared by matrix assisted pulsed laser evaporation and utilized in L929 cell adhesion and detachment studies. Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used to determine the pNIPAAm thin films chemical and morphological characteristics. The FTIR data demonstrated that the functional groups in the MAPLE-deposited films remained intact for fluences in the range of 200–600 mJ cm{sup −2}. Within this fluence range, the AFM topographical studies showed that the roughness of the coatings was dependent on laser fluence and the obtained surfaces were characterized by a granular aspect. L929 cell viability studies onto the pNIPAAm coatings showed little or no toxic effect for fluences below 600 mJ cm{sup −2}, while for higher fluences, viability was decreased with more than 50%. The adhesion and detachment of the cell was found to be mainly dependent on the film surface morphology.

  11. Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

    Directory of Open Access Journals (Sweden)

    Sarita Boolchandani

    2018-01-01

    Full Text Available The indium selenium (InSe bilayer thin films of various thickness ratios, InxSe(1-x (x = 0.25, 0.50, 0.75, were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe and aluminum selenide (AlSe bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

  12. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  13. Electrical transport properties of MoO{sub 3} thin films prepared by laser assisted evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Carreno, L.D.; Pardo, A.; Zuluaga, M.; Torres, J.; Alfonso, J.E. [Group of Materials with Technological Applications, GMAT, Physics Department, Universidad Nacional de Colombia, Bogota (Colombia); Cortes-Bracho, O.L. [Group of Materials with Technological Applications, GMAT, Physics Department, Universidad Nacional de Colombia, Bogota (Colombia); Electronic Engineering Department, Universidad Nacional de Colombia, Bogota (Colombia)

    2007-07-01

    In the present paper the growth of MoO{sub 3} thin films on common glass substrates are described. The films were prepared by evaporation of a MoO{sub 3} target with a CO{sub 2} laser (10.6 {mu}m), operating in the continuous wave mode. The effect of substrate temperature on the crystallographic structure and electrical properties of MoO{sub 3} thin films was studied. The chemical composition of the different species formed on the films surface was obtained by X-ray photoelectron spectroscopy (XPS) and the crystalline structure was studied with X-ray diffraction (XRD). The electrical conductivity of the films was determined using the standard four-points method. Conductivity of the films varied from de 10{sup -9} to 10{sup -5} ({omega}cm){sup -1} in the 300-600 K temperature range. Arrhenius-type plots for the electrical conductivity indicate the presence of at least two different conduction mechanisms. The I-V characteristic curve shows an ohmic behavior only in the 4.5-60 V range. Outside this interval the I-V curve has a behavior described by a power law. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Thermoelectric properties of V{sub 2}O{sub 5} thin films deposited by thermal evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Santos, R.; Loureiro, J., E-mail: joa.loureiro@gmail.com; Nogueira, A.; Elangovan, E.; Pinto, J.V.; Veiga, J.P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I., E-mail: imf@fct.unl.pt

    2013-10-01

    This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V{sub 2}O{sub 5}) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V{sub 2}O{sub 5} phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 μV/K and electrical conductivity of 5.5 (Ω m){sup −1}. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

  15. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  16. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    International Nuclear Information System (INIS)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

    2002-01-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  17. CuIn{sub x}Ga{sub 1-x}Se{sub 2} thin films prepared by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalam, M.; Kannan, M.D.; Jayakumar, S.; Balasundaraprabhu, R.; Nandakumar, A.K. [Thin Film Center, Department of Physics, PSG College of Technology (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology (India)

    2008-05-15

    CuIn{sub x}Ga{sub 1-x}Se{sub 2} bulk compound of three different compositions x=0.75, 0.80 and 0.85 have been prepared using individual elements of copper, indium, gallium and selenium. Thin films of CuIn{sub x}Ga{sub 1-x}Se{sub 2} have been deposited using the prepared bulk by electron beam evaporation method. The structural studies carried on the deposited films revealed that films annealed at 400 C are crystalline in nature exhibiting chalcopyrite phase. The position of the (1 1 2) peak in the X-ray diffractogram corresponding to the chalcopyrite phase has been found to be dependent on the percentage of gallium in the films. The composition of the prepared bulk and thin films has been identified using energy dispersive X-ray analysis. The photoluminescence spectra of the CuIn{sub x}Ga{sub 1-x}Se{sub 2} films exhibited sharp luminescence peaks corresponding to the band gap of the material. (author)

  18. Photo- and Electrochromic Properties of Activated Reactive Evaporated MoO3 Thin Films Grown on Flexible Substrates

    Directory of Open Access Journals (Sweden)

    K. Hari Krishna

    2008-01-01

    Full Text Available The molybdenum trioxide (MoO3 thin films were grown onto ITO-coated flexible Kapton substrates using plasma assisted activated reactive evaporation technique. The film depositions were carried out at constant glow power and oxygen partial pressures of 8 W and 1×10−3 Torr, respectively. The influence of substrate temperature on the microstructural and optical properties was investigated. The MoO3 thin films prepared at a substrate temperature of 523 K were found to be composed of uniformly distributed nanosized grains with an orthorhombic structure of α-MoO3. These nanocrystalline MoO3 thin films exhibited higher optical transmittance of about 80% in the visible region with an evaluated optical band gap of 3.29 eV. With the insertion of 12.5 mC/cm2, the films exhibited an optical modulation of 40% in the visible region with coloration efficiency of 22 cm2/C at the wavelength of 550 nm. The MoO3 films deposited at 523 K demonstrated better photochromic properties and showed highest color center concentration for the irradiation time of 30 minutes at 100 mW/cm2.

  19. Annealing behaviour of structural and magnetic properties of evaporated Co thin films

    International Nuclear Information System (INIS)

    Jergel, M; Halahovets, Y; Siffalovic, P; Mat'ko, I; Senderak, R; Majkova, E; Luby, S; Cheshko, I; Protsenko, S

    2009-01-01

    Cobalt thin films of 50 nm nominal thickness were e-beam evaporated on silicon substrates covered with thermal oxide. Two series of independent and cumulative vacuum annealings up to 600 deg. C and 650 deg. C, respectively, were performed. The x-ray diffraction, specular and non-specular x-ray reflectivity and longitudinal magneto-optical Kerr effect measurements were applied to probe the annealing behaviour of the film structure and magnetic properties. A gradual transition from the hexagonal close-packed (hcp) to the face-centred cubic (fcc) structure was observed. Evolution of the in-plane magnetic anisotropy is dominated by residual stresses which relax during the structural transformation. The coercivity follows the stress behaviour in the hcp phase up to 300 deg. C and increases abruptly above 400 deg. C due to improving the magneto-crystalline anisotropy in the growing fcc crystallites and enhanced surface/interface roughness.

  20. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  1. Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

    Science.gov (United States)

    Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

    2016-08-01

    Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

  2. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  3. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    International Nuclear Information System (INIS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  4. Structural, morphological and optical properties of thermal annealed TiO thin films

    International Nuclear Information System (INIS)

    Zribi, M.; Kanzari, M.; Rezig, B.

    2008-01-01

    Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 deg. C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO 2 phase for the annealing temperature above 400 deg. C

  5. Nanostructured thin film coatings with different strengthening effects

    Directory of Open Access Journals (Sweden)

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  6. Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

    International Nuclear Information System (INIS)

    Luo, Shi; Jang, Dongchan; Greer, Julia R.; Lee, Jiun-Haw; Liu, Chee-Wee; Shieh, Jia-Min; Shen, Chang-Hong; Wu, Tsung-Ta

    2014-01-01

    This work examines Cu(In,Ga)Se 2 thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

  7. P-type CuxS thin films: Integration in a thin film transistor structure

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

    2013-01-01

    Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

  8. Organic donor-acceptor thin film systems. Towards optimized growth conditions

    Energy Technology Data Exchange (ETDEWEB)

    Keller, Kerstin Andrea

    2009-06-30

    In this work the preparation of organic donor-acceptor thin films was studied. A chamber for organic molecular beam deposition was designed and integrated into an existing deposition system for metallic thin films. Furthermore, the deposition system was extended by a load-lock with integrated bake-out function, a chamber for the deposition of metallic contacts via stencil mask technique and a sputtering chamber. For the sublimation of the organic compounds several effusion cells were designed. The evaporation characteristic and the temperature profile within the cells was studied. Additionally, a simulation program was developed, which calculates the evaporation characteristics of different cell types. The following processes were integrated: evaporation of particles, migration on the cell walls and collisions in the gas phase. It is also possible to consider a temperature gradient within the cell. All processes can be studied separately and their relative strength can be varied. To verify the simulation results several evaporation experiments with different cell types were employed. The thickness profile of the prepared thin films was measured position-dependently. The results are in good agreement with the simulation. Furthermore, the simulation program was extended to the field of electron beam induced deposition (EBID). The second part of this work deals with the preparation and characterization of organic thin films. The focus hereby lies on the charge transfer salt (BEDT-TTF)(TCNQ), which has three known structure variants. Thin films were prepared by different methods of co-evaporation and were studied with optical microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy (EDX).The formation of the monoclinic phase of (BEDT-TTF)(TCNQ) could be shown. As a last part tunnel structures were prepared as first thin film devices and measured in a He{sub 4} cryostat. (orig.)

  9. Nanoparticle Thin Films for Gas Sensors Prepared by Matrix Assisted Pulsed Laser Evaporation

    Directory of Open Access Journals (Sweden)

    Roberto Rella

    2009-04-01

    Full Text Available The matrix assisted pulsed laser evaporation (MAPLE technique has been used for the deposition of metal dioxide (TiO2, SnO2 nanoparticle thin films for gas sensor applications. For this purpose, colloidal metal dioxide nanoparticles were diluted in volatile solvents, the solution was frozen at the liquid nitrogen temperature and irradiated with a pulsed excimer laser. The dioxide nanoparticles were deposited on Si and Al2O3 substrates. A rather uniform distribution of TiO2 nanoparticles with an average size of about 10 nm and of SnO2 nanoparticles with an average size of about 3 nm was obtained, as demonstrated by high resolution scanning electron microscopy (SEM-FEG inspections. Gas-sensing devices based on the resistive transduction mechanism were fabricated by depositing the nanoparticle thin films onto suitable rough alumina substrates equipped with interdigitated electrical contacts and heating elements. Electrical characterization measurements were carried out in controlled environment. The results of the gas-sensing tests towards low concentrations of ethanol and acetone vapors are reported. Typical gas sensor parameters (gas responses, response/recovery time, sensitivity, and low detection limit towards ethanol and acetone are presented.

  10. Nanoparticle thin films for gas sensors prepared by matrix assisted pulsed laser evaporation.

    Science.gov (United States)

    Caricato, Anna Paola; Luches, Armando; Rella, Roberto

    2009-01-01

    The matrix assisted pulsed laser evaporation (MAPLE) technique has been used for the deposition of metal dioxide (TiO(2), SnO(2)) nanoparticle thin films for gas sensor applications. For this purpose, colloidal metal dioxide nanoparticles were diluted in volatile solvents, the solution was frozen at the liquid nitrogen temperature and irradiated with a pulsed excimer laser. The dioxide nanoparticles were deposited on Si and Al(2)O(3) substrates. A rather uniform distribution of TiO(2) nanoparticles with an average size of about 10 nm and of SnO(2) nanoparticles with an average size of about 3 nm was obtained, as demonstrated by high resolution scanning electron microscopy (SEM-FEG) inspections. Gas-sensing devices based on the resistive transduction mechanism were fabricated by depositing the nanoparticle thin films onto suitable rough alumina substrates equipped with interdigitated electrical contacts and heating elements. Electrical characterization measurements were carried out in controlled environment. The results of the gas-sensing tests towards low concentrations of ethanol and acetone vapors are reported. Typical gas sensor parameters (gas responses, response/recovery time, sensitivity, and low detection limit) towards ethanol and acetone are presented.

  11. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  12. Optical and structural properties of CuSbS2 thin films grown by thermal evaporation method

    International Nuclear Information System (INIS)

    Rabhi, A.; Kanzari, M.; Rezig, B.

    2009-01-01

    Structural, optical and electrical properties of CuSbS 2 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuSbS 2 thin films were carried out at substrate temperatures in the temperature range 100-200 deg. C . The structure and composition were characterized by XRD, SEM and EDX. X-ray diffraction revealed that the films are (111) oriented upon substrate temperature 170 deg. C and amorphous for the substrate temperatures below 170 deg. C . No secondary phases are observed for all the films. The optical absorption coefficients and band gaps of the films were estimated by optical transmission and reflection measurements at room temperature. Strong absorption coefficients in the range 10 5 -10 6 cm -1 at 500 nm were found. The direct gaps Eg lie between 0.91-1.89 eV range. It is observed that there is a decrease in optical band gap Eg with increasing the substrate temperature. Resistivity of 0.03-0.96 Ω cm, in dependence on substrate temperature was characterized. The all unheated films exhibit p-type conductivity. The characteristics reported here also offer perspective for CuSbS 2 as an absorber material in solar cells applications

  13. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  14. Photoelectrochemical behavior of Al{sub x}In{sub 1−x}N thin films grown by plasma-assisted dual source reactive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Alizadeh, M., E-mail: alizadeh_kozerash@yahoo.com; Ganesh, V.; Pandikumar, A.; Goh, B.T.; Azianty, S.; Huang, N.M.; Rahman, S.A., E-mail: saadah@um.edu.my

    2016-06-15

    In this work the dependence of photoelectrochemical (PEC) behavior of Al{sub x}In{sub 1−x}N (0.48 ≤x ≤ 0.66) thin films grown by plasma-assisted dual source reactive evaporation, on the plasma dynamics and the alloys properties was studied. The influence of nitrogen flow rate on the compositional, morphological, structural and optical properties of the as-prepared films were investigated using X-ray photoelectron spectroscopy (XPS), Field emission scanning electron microscopy (FESEM), micro Raman spectroscopy and UV–vis spectroscopy. The PEC study of the as-grown Al{sub x}In{sub 1−x}N thin films targeted for water splitting application were performed in the presence of simulated solar irradiation of AM 1.5G (100 mW/cm{sup 2}). The PEC results revealed that the photocurrent for the Al{sub x}In{sub 1−x}N thin film grown at nitrogen flow rate of 80 sccm is ∼10-fold higher than the dark current. From the Mott–Schottky (MS) plots it was deduced that by increasing N{sub 2} flow rate up to 80 sccm, the flat band potential shifts toward more negative values. The good photoelectrochemical behavior of Al{sub x}In{sub 1−x}N thin films showed that this material could be a potential candidate for PEC water splitting. - Highlights: • Al{sub x}In{sub 1−x}N films were grown by Plasma-aided dual source reactive evaporation. • Effect of nitrogen flow rate on the films properties was investigated. • The band gap of the films decreased from 2.33 to 1.92 eV. • A good photoelectrochemical behavior of the Al{sub x}In{sub 1−x}N thin films was shown. • The photocurrent for the Al{sub 0.55}In{sub 0.45}N films is ∼10-fold higher than dark current.

  15. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-01-01

    We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

  16. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Chunfeng Lan

    2018-02-01

    Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

  17. Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

    Science.gov (United States)

    Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

    2018-05-01

    Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

  18. Formation of thin film like assembly of exfoliated C3N4 nanoflakes by solvent non-evaporative method using centrifuge

    Science.gov (United States)

    Tejasvi, Ravi; Basu, Suddhasatwa

    2017-12-01

    A simple method for depositing a thin film of nanomaterial on a substrate using centrifugation technique has been developed, whereby solvent evaporation is prevented and solvent reuse is possible. The centrifuge technique of deposition yields uniform, smooth thin film irrespective of substrate surface texture. The deposited TiO2/eC3N4 film studied, through field emission scanning electron microscope, atomic force microscope, and optical surface profilometer, shows variation in surface roughness on the basis of centrifugation speeds. Initially film coverage improves and surface roughness decreases with the increase in rpm of the centrifuge and the surface roughness slightly increases with further increase in rpm. The photoelectrochemical studies of TiO2/eC3N4 films suggest that the centrifuge technique forms better heterojunctions compared to that by spin coating technique leading to enhanced photoelectrochemical water splitting.

  19. Preparation, electrical and optical properties of evaporated thin films of CuPbI3

    International Nuclear Information System (INIS)

    Kuku, T.A.; Azi, S.O.

    1995-10-01

    Thin films of CuPbl 3 have been prepared by a vacuum evaporation process. X-ray analysis gives structural parameters in consonance with the bulk powder form of the material. The film however preferring a growth in the [002] direction. Electrical conductivity indicates an activated process with two activation energies being 0.45 eV for T ≤ 373 K, and 0.6 eV for T ≥ 373 K. Both are interpreted to be due to the transport of anionic carriers in the phases existing below and beyond 373 K respectively. Optical characterization reveals a material with high absorption coefficient, with α ≥ 10 4 cm -1 . The material is characterized by a direct absorption with the direct edge at 1.64 eV. (author). 13 refs, 5 figs

  20. Growth Structural and Optical Properties of the Thermally Evaporated Tin Diselenide (SnSe2) Thin Films

    OpenAIRE

    R. Sachdeva1,; M. Sharma1,; A. Devi1,; U. Parihar1,; N. Kumar1,; N. Padha1,; C.J. Panchal

    2011-01-01

    Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnSe2 thin films were grown using direct thermal evaporation of SnSe2 compound material on chemically cleaned glass substrate, which were held at different substrate temperatures. X-ray diffraction an...

  1. Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions

    Science.gov (United States)

    Majewska, N.; Gazda, M.; Jendrzejewski, R.; Majumdar, S.; Sawczak, M.; Śliwiński, G.

    2017-08-01

    Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

  2. Strength, stiffness, and microstructure of Cu(In,Ga)Se{sub 2} thin films deposited via sputtering and co-evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Shi; Jang, Dongchan; Greer, Julia R., E-mail: jrgreer@caltech.edu [Division of Applied Science and Engineering, California Institute of Technology, 1200 E California Blvd., Pasadena, California 91125 (United States); Lee, Jiun-Haw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, No. 1, Sec 4 Roosevelt, Taipei 10617, Taiwan (China); Liu, Chee-Wee [Department of Electrical Engineering, National Taiwan University, No 1, Sec 4 Roosevelt, Taipei 10617, Taiwan (China); Shieh, Jia-Min; Shen, Chang-Hong; Wu, Tsung-Ta [National Nano Device Laboratories, Hsinchu Science Park, No. 26, Prosperity Road I, Hsinchu 30078, Taiwan (China)

    2014-07-07

    This work examines Cu(In,Ga)Se{sub 2} thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

  3. Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

    International Nuclear Information System (INIS)

    Hemmous, M.; Layadi, A.; Guittoum, A.; Souami, N.; Mebarki, M.; Menni, N.

    2014-01-01

    Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al 2 O 3 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni–Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t Cr , then stress is relieved and grain size increases. All these results will be discussed and correlated. - Highlights: • The structural and electrical properties of evaporated Ni thin films are studied. • The effect of thickness, substrates and Cu underlayer is investigated. • Texture, grain size, strain and surface morphology are discussed. • Growth modes are described as a function of Ni thickness

  4. Supramolecular structure of a perylene derivative in thin films made by vacuum thermal evaporation

    International Nuclear Information System (INIS)

    Fernandes, Jose Diego

    2015-01-01

    The supramolecular arrangement of organic thin films is a factor that influences both optical and electrical properties of these films and, consequently, the technological applications involving organic electronics. In this dissertation, thin films of a perylene derivative (bis butylimido perylene, acronym BuPTCD) were produced by physical vapor deposition (PVD) using vacuum thermal evaporation. The aim of this work was to investigate the supramolecular arrangement of BuPTCD films, which implies to control the thickness at nanometer scale and to determine the molecular organization, the morphology (at nano and micrometer scales) and the crystallinity, besides the stability of this arrangement as a function of the temperature. Optical properties (such as absorption and emission) and electrical properties (such as conductivity and photoconductivity) were also determined. The UV-Vis absorption spectra revealed a controlled growth (uniform) of the BuPTCD films. Atomic force and optical microscopy images showed a homogeneous surface of the film at nano and micrometer scales, respectively. The X-ray diffraction showed that the BuPTCD powder and PVD film have different crystalline structures, with the BuPTCD molecules head-on oriented in the PVD films, supported on the substrate surface by the side group (FTIR). This structure favors the light emission (photoluminescence) by the formation of excimers. The thermal treatment (200°C for 10 min) does not affect the molecular organization of the PVD films, showing a thermal stability of the BuPTCD supramolecular arrangement under these circumstances. The electrical measurements (DC) showed a linear increase of the current as a function of the tension, which is characteristic of ohmic behavior. Also, the films exhibited an increase of current by 2 orders of magnitude when exposed to light (photoconductive properties). Finally, BuPTCD films were exposed to vapor of trifluoroacetic acid (TFA) to verify the sensitivity of the Bu

  5. Properties of pulsed laser deposited NiO/MWCNT thin films

    CSIR Research Space (South Africa)

    Yalisi, B

    2011-05-01

    Full Text Available Pulsed laser deposition (PLD) is a thin-film deposition technique, which uses short and intensive laser pulses to evaporate target material. The technique has been used in this work to produce selective solar absorber (SSA) thin film composites...

  6. Growth of thin films of low molecular weight proteins by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Matei, Andreea; Schou, Jørgen; Constantinescu, C.

    2011-01-01

    Thin films of lysozyme and myoglobin grown by matrix assisted pulsed laser evaporation (MAPLE) from a water ice matrix have been investigated. The deposition rate of these two low molecular weight proteins (lysozyme: 14307 amu and myoglobin: 17083 amu) exhibits a maximum of about 1–2 ng/cm2 per....... The results for lysozyme demonstrate that the fragmentation rate of the proteins during the MAPLE process is not influenced by the pH of the water solution prior to freezing....

  7. Structural, optical and electrical characterization of vacuum-evaporated nanocrystalline CdSe thin films for photosensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vipin; Sharma, D.K.; Sharma, Kapil [Krishna Institute of Engineering and Technology, Department of Physics, Ghaziabad (India); Dwivedi, D.K. [M.M.M University of Technology, Department of Physics, Gorakhpur (India)

    2016-11-15

    II-VI nanocrystalline semiconductors offer a wide range of applications in electronics, optoelectronics and photonics. Thin films of CdSe were deposited onto ultra-clean glass substrates by vacuum evaporation method. The as-deposited films were annealed in vacuum at 350 K. The structural, elemental, morphological, optical and electrical investigations of annealed films were carried out. The X-ray diffraction pattern of the films shows that films were polycrystalline in nature having hexagonal structure with preferential orientation of grains along (002) plane. SEM image indicates that the films were uniform and well covered to the glass substrate. EDAX analysis confirms the stoichiometric composition of the film. Raman spectra were used to observe the characteristic vibrational modes of CdSe. The energy band gap of these films was obtained by absorption spectra. The films were found to have a direct type of transition of band gap occurring at 1.75 eV. The dark electrical conductivity and photoconductivity reveals that the films were semiconducting in nature indicating the suitability of these films for photosensor applications. The Hall effect measurement reveals that the films have n-type electrical conductivity. (orig.)

  8. Stability of tetraphenyl butadiene thin films in liquid xenon

    International Nuclear Information System (INIS)

    Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.

    2016-01-01

    Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.

  9. Cellulose triacetate, thin film dielectric capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  10. Structural, electrical and magnetic properties of evaporated Ni/Cu and Ni/glass thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nacereddine, C. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Layadi, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria)]. E-mail: A_Layadi@yahoo.fr; Guittoum, A. [Centre de Recherche Nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Cherif, S.-M. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Chauveau, T. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Billet, D. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Youssef, J. Ben [Laboratoire de Magnetisme de Bretagne, U.B.O., Brest 29238 (France); Bourzami, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Bourahli, M.-H. [Departement d' O. M. P., Universite Ferhat Abbas, Setif 19000 (Algeria)

    2007-01-25

    The structural, electrical and magnetic properties of Ni thin films evaporated onto glass and polycrystalline Cu substrates have been investigated. The Ni thickness ranges from 31 to 165 nm. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) have been used to study the structure and morphology of these systems. The Ni/Cu and Ni/glass thin films are found to be polycrystalline with a (1 1 1) texture. There is an overall increase of the grain size with increasing thickness. A negative strain was noted indicating that all the samples are under a compressive stress. Diffusion at the grain boundaries seems to be a major contribution to the electrical resistivity in this thickness range. Study of the hysteresis curves, obtained by vibrating sample magnetometer (VSM), indicates that all samples are characterized by an in-plane magnetization easy axis. Higher in-plane coercive fields seem to be associated with higher grain size, indicating that coercivity may be due to nucleation of reverse domains rather than pinning of domain walls. The saturation field and the squareness have been studied as a function of the Ni thickness.

  11. Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

    Directory of Open Access Journals (Sweden)

    Jie Zhang

    2013-01-01

    Full Text Available Copper zinc tin sulfur (CZTS thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1, appropriate band gap (~1.5 eV, and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS. In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT precursors were deposited by thermal evaporation and then sulfurized in N2 + H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112 orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm, 1.714×1017 cm−3, and 3.89 cm2/(V · s, respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.

  12. AC and dielectric properties of vacuum evaporated InTe bilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matheswaran, P. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), GN Mills (po), Coimbatore 641 029, Tamil Nadu (India); Sathyamoorthy, R., E-mail: rsathya59@gmail.com [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), GN Mills (po), Coimbatore 641 029, Tamil Nadu (India); Saravanakumar, R. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), GN Mills (po), Coimbatore 641 029, Tamil Nadu (India); Velumani, S. [Department of Electrical Engineering (SEES), CINVESTAV-IPN Zacatenco, D.F., 07360 (Mexico)

    2010-10-25

    III-VI compound semiconductors receive great attention due to its applications in memory devices, switching devices, gas sensors, hybrid solar cells, etc. InTe thin films were prepared by sequential thermal evaporation of In and Te at Ar atmosphere. X-ray diffraction pattern of the films shows that the films posses mixed phase of In{sub 2}Te{sub 3} and In{sub 2}Te{sub 5}. Grain size (D) and dislocation density were calculated by using Scherer's formula. Surface morphology of the film is analyzed by SEM and the surface is found to be agglomeration of well defined grains. EDS analysis reveals that elemental composition is in right stoichiometry. The value of capacitance and tan {delta} was recorded with respect to different frequencies and at different temperatures. It is observed that the capacitance decreases with increase in frequency at all temperatures. The observed nature of the capacitance is due to the inability of the dipoles to orient in a rapidly varying electric field. The pronounced increase in capacitance toward the low frequency region may be attributed to the blocking of charge carriers at the electrodes which leads to space charge layer resulting in the increase of capacitance. The mechanism responsible for AC conduction is found to be electronic hopping. TCC and TCP values were calculated and the results are discussed.

  13. Bubble-assisted film evaporation correlation for saline water at sub-atmospheric pressures in horizontal-tube evaporator

    KAUST Repository

    Shahzad, Muhammad Wakil

    2013-01-01

    In falling film evaporators, the overall heat transfer coefficient is controlled by film thickness, velocity, liquid properties and the temperature differential across the film layer. This article presents the heat transfer behavior for evaporative film boiling on horizontal tubes, but working at low pressures of 0.93-3.60 kPa (corresponding solution saturation temperatures of 279-300 K) as well as seawater salinity of 15,000 to 90,000 mg/l or ppm. Owing to a dearth of literature on film-boiling at these conditions, the article is motivated by the importance of evaporative film boiling in the desalination processes such as the multi-effect distillation (MED) or multi-stage flashing (MSF): It is observed that in addition to the above-mentioned parameters, evaporative heat transfer of seawater is affected by the emergence of micro-bubbles within the thin film layer, particularly when the liquid saturation temperatures drop below 298 K (3.1 kPa). Such micro bubbles are generated near to the tube wall surfaces and they enhanced the heat transfer by two or more folds when compared with the predictions of conventional evaporative film boiling. The appearance of micro-bubbles is attributed to the rapid increase in the specific volume of vapor, i.e., dv/dT, at low saturation temperature conditions. A new correlation is thus proposed in this article and it shows good agreement to the measured data with an experimental uncertainty of 8% and regression RMSE of 3.5%. © 2012 Elsevier Ltd. All rights reserved.

  14. Synthesis and characterization of binary ZnO-SnO2 (ZTO) thin films by e-beam evaporation technique

    Science.gov (United States)

    Bibi, Shagufta; Shah, A.; Mahmood, Arshad; Ali, Zahid; Raza, Qaisar; Aziz, Uzma; Haneef; Waheed, Abdul; Shah, Ziaullah

    2018-04-01

    The binary ZnO-SnO2 (ZTO) thin films with varying SnO2 concentrations (5, 10, 15, and 20 wt%) were grown on glass substrate by e-beam evaporation technique. The prepared ZTO films were annealed at 400 °C in air. These films were then characterized to investigate their structural, optical, and electrical properties as a function of SnO2 concentration. XRD analysis reveals that the crystallinity of the film decreases with the addition of SnO2 and it transforms to an amorphous structure at a composition of 40% SnO2 and 60% ZnO. Morphology of the films was examined by atomic force microscopy which points out that surface roughness of the films decreases with the increasing of SnO2 in the film. Optical properties such as optical transparency, band-gap energy, and optical constants of these films were examined by spectrophotometer and spectroscopic Ellipsometer. It was observed that the average optical transmission of mixed films improves with incorporation of SnO2. In addition, the band-gap energy of the films was determined to be in the range of 3.37-3.7 eV. Furthermore, it was found that the optical constants (n and k) decrease with the addition of SnO2. Similarly, it is observed that the electrical resistivity increases nonlinearly with the increase in SnO2 in ZnO-SnO2 thin films. However, it is noteworthy that the highest figure of merit (FOM) value, i.e., 55.87 × 10-5 Ω-1, is obtained for ZnO-SnO2 (ZTO) thin film with 40 wt% of SnO2 composition. Here, we suggest that ZnO-SnO2 (ZTO) thin film with composition of 60:40 wt% can be used as an efficient TCO film due to the improved transmission, and reduced RMS value and highest FOM value.

  15. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  16. Preparation of Nb thin films with bulk transition temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Peirce, L H [Florida State Univ., Tallahassee (USA). Dept. of Physics

    1984-08-01

    Thin films (1000-2000 A) of Nb were prepared with bulk transition temperatures (9.25 K) by evaporation from an electron gun. Necessary substrate temperatures, evaporation rates and H/sub 2/O pressures were determined.

  17. Residual stress in spin-cast polyurethane thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)

    2015-01-19

    Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.

  18. Characterization of CuIn1-xAlxS2 thin films prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Smaili, F.; Kanzari, M.; Rezig, B.

    2008-01-01

    Ingots containing single crystals of the quaternary alloys CuIn 1-x Al x S 2 (CIAS) were grown by a horizontal Bridgman method for compositions with x = 0, 0.2 and x = 0.4. (CIAS) thin films were prepared by thermal evaporation technique on to glass substrates. Structural and optical properties of the films were studied in function of the Al content. Band gap, and absorption coefficients were determined from the analysis of the optical spectra (transmittance and reflectance as a function of wavelength) recorded by a spectrophotometer. The samples have direct bandgap energies of 1.95 eV (x = 0), 2.06 eV (x = 0,2) and 2.1 eV (x = 0,4). These optical results were correlated with the structural analysis by X-Ray diffraction

  19. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  20. Thin films of polymer blends deposited by matrix-assisted pulsed laser evaporation: Effects of blending ratios

    International Nuclear Information System (INIS)

    Paun, Irina Alexandra; Ion, Valentin; Moldovan, Antoniu; Dinescu, Maria

    2011-01-01

    In this work, we show successful use of matrix-assisted pulsed laser evaporation (MAPLE) for obtaining thin films of PEG:PLGA blends, in the view of their use for controlled drug delivery. In particular, we investigate the influence of the blending ratios on the characteristics of the films. We show that the roughness of the polymeric films is affected by the ratio of each polymer within the blend. In addition, we perform Fourier transformed infrared spectroscopy (FTIR) measurements and we find that the intensities ratios of the infrared absorption bands of the two polymers are consistent with the blending ratios. Finally, we assess the optical constants of the polymeric films by spectroscopic ellipsometry (SE). We point out that the blending ratios exert an influence on the optical characteristics of the films and we validate the SE results by atomic force microscopy and UV-vis spectrophotometry. In all, we stress that the ratios in which the two polymers are blended have significant impact on the morphology, chemical structure and optical characteristics of the polymeric films deposited by MAPLE.

  1. Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

    Science.gov (United States)

    Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

    2006-04-01

    Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

  2. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  3. Reflection of circularly polarized light and the effect of particle distribution on circular dichroism in evaporation induced self-assembled cellulose nanocrystal thin films

    Directory of Open Access Journals (Sweden)

    D. Hewson

    2017-06-01

    Full Text Available Evaporation induced self-assembled (EISA thin films of cellulose nanocrystals (CNCs have shown great potential for displaying structural colour across the visible spectrum. They are believed primarily to reflect left handed circularly polarised (LCP light due to their natural tendency to form structures comprising left handed chirality. Accordingly the fabrication of homogenously coloured CNC thin films is challenging. Deposition of solid material towards the edge of a dried droplet, via the coffee-stain effect, is one such difficulty in achieving homogenous colour across CNC films. These effects are most easily observed in films prepared from droplets where observable reflection of visible light is localised around the edge of the dry film. We report here, the observation of both left and right hand circularly polarised (LCP/RCP light in reflection from distinct separate regions of CNC EISA thin films and we elucidate how these reflections are dependent on the distribution of CNC material within the EISA thin film. Optical models of reflection are presented which are based on structures revealed using high resolution transmission electron microscopy (TEM images of film cross sections. We have also employed spectroscopic characterisation techniques to evaluate the distribution of solid CNC material within a selection of CNC EISA thin films and we have correlated this distribution with polarised light spectra collected from each film. We conclude that film regions from which RCP light was reflected were associated with lower CNC concentrations and thicker film regions.

  4. Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

    Directory of Open Access Journals (Sweden)

    Hussein Abdel-Hafez Mohamed and Hazem Mahmoud Ali

    2008-01-01

    Full Text Available A thin buffer layer of cadmium oxide (CdO was used to enhance the optical and electrical properties of indium tin oxide (ITO films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1×10−3 Ω cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450 °C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45×10−4 Ω cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

  5. Thin films of molecular materials synthesized from fisher's carbene ferrocenyl: Film formation and electrical properties

    International Nuclear Information System (INIS)

    Sanchez-Vergara, M.E.; Ortiz, A.; Alvarez-Toledano, C.; Moreno, A.; Alvarez, J.R.

    2008-01-01

    The synthesis of materials from Fisher's carbene ferrocenyl of the elements chromium, molybdenum and tungsten was carried out. The Fisher's compounds that were synthesized included the following combinations of two different metallic atoms: iron with chromium, iron with molybdenum and iron with tungsten. The molecular solids' preparation was done in electro-synthesis cells with platinum electrodes. Thin films were prepared by vacuum thermal evaporation on quartz substrates and crystalline silicon wafers. Pellets and thin films from these compounds were characterized by Fourier transform infrared spectroscopy, scanning electron microscopy, energy-dispersive spectroscopy, atomic force microscopy and ellipsometry. The powder and thin films synthesized from these materials show the same intra-molecular bonds shown by infrared spectroscopy results, suggesting that thermal evaporation does not alter these bonds in spite of the thin films being amorphous, in contrast with other bimetallic complexes where material decomposition occurs. The differences in the conductivity values of the prepared films are very small, so they may be attributed to the different metallic ions employed in each case. The tungsten complex exhibits a higher conductivity than the molybdenum and chromium complexes at room temperature. Electrical conductivity values found for thin films are higher than for pellets made of the same molecular materials

  6. Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

    Science.gov (United States)

    Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

    2012-12-01

    Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

  7. Texture-dependent twin formation in nanocrystalline thin Pd films

    International Nuclear Information System (INIS)

    Wang, B.; Idrissi, H.; Shi, H.; Colla, M.S.; Michotte, S.; Raskin, J.P.; Pardoen, T.; Schryvers, D.

    2012-01-01

    Nanocrystalline Pd films were produced by electron-beam evaporation and sputter deposition. The electron-beam-evaporated films reveal randomly oriented nanograins with a relatively high density of growth twins, unexpected in view of the high stacking fault energy of Pd. In contrast, sputter-deposited films show a clear 〈1 1 1〉 crystallographic textured nanostructure without twins. These results provide insightful information to guide the generation of microstructures with enhanced strength/ductility balance in high stacking fault energy nanocrystalline metallic thin films.

  8. Non-linear optics of nano-scale pentacene thin film

    Science.gov (United States)

    Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

    2016-07-01

    We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.

  9. Organic Thin Films Deposited by Emulsion-Based, Resonant Infrared, Matrix-Assisted Pulsed Laser Evaporation: Fundamentals and Applications

    Science.gov (United States)

    Ge, Wangyao

    Thin film deposition techniques are indispensable to the development of modern technologies as thin film based optical coatings, optoelectronic devices, sensors, and biological implants are the building blocks of many complicated technologies, and their performance heavily depends on the applied deposition technique. Particularly, the emergence of novel solution-processed materials, such as soft organic molecules, inorganic compounds and colloidal nanoparticles, facilitates the development of flexible and printed electronics that are inexpensive, light weight, green and smart, and these thin film devices represent future trends for new technologies. One appealing feature of solution-processed materials is that they can be deposited into thin films using solution-processed deposition techniques that are straightforward, inexpensive, high throughput and advantageous to industrialize thin film based devices. However, solution-processed techniques rely on wet deposition, which has limitations in certain applications, such as multi-layered film deposition of similar materials and blended film deposition of dissimilar materials. These limitations cannot be addressed by traditional, vacuum-based deposition techniques because these dry approaches are often too energetic and can degrade soft materials, such as polymers, such that the performance of resulting thin film based devices is compromised. The work presented in this dissertation explores a novel thin film deposition technique, namely emulsion-based, resonant infrared, matrix-assisted pulsed laser evaporation (RIR-MAPLE), which combines characteristics of wet and dry deposition techniques for solution-processed materials. Previous studies have demonstrated the feasibility of emulsion-based RIR-MAPLE to deposit uniform and continuous organic, nanoparticle and blended films, as well as hetero-structures that otherwise are difficult to achieve. However, fundamental understanding of the growth mechanisms that govern

  10. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  11. SnS absorber thin films by co-evaporation: Optimization of the growth rate and influence of the annealing

    Energy Technology Data Exchange (ETDEWEB)

    Robles, Víctor, E-mail: victor.robles@ciemat.es; Trigo, Juan Francisco; Guillén, Cecilia; Herrero, José

    2015-05-01

    Tin sulfide thin films were prepared by co-evaporation on soda-lime glass substrates, for use as absorber layers. The synthesis was carried out at 350 °C substrate temperature and varying the growth rate in the 2-6 Å/s range, adjusting the deposition time in order to obtain thicknesses in the 700-1500 nm range. After evaporation, the samples were heated at 400 °C and 500 °C under various atmospheres. The evolution of the morphological, structural and optical properties has been analyzed as a function of the thickness and deposition rate, before and after annealing. For the samples grown at the lowest rate, SnS and Sn{sub 2}S{sub 3} phase mixing has been observed by X-ray diffraction. Samples with reduced thickness preferably crystallize in the SnS phase, whereas thicker layers become richer in the Sn{sub 2}S{sub 3} phase. The sulfur treatment of samples prepared at the lowest rate results in the formation of SnS{sub 2} phase. Otherwise, the samples obtained at the highest rates show single-phase SnS after heating at 400 °C in sulfur atmosphere, with gap energy values around 1.24 eV. - Highlights: • Tin sulfide thin films were deposited by co-evaporation at different growth rates. • The influence of the growth rate and post-annealing at different conditions was studied. • The SnS phase was obtained by optimizing the growth rate and the annealing process. • The SnS phase presented properties for use as absorber layer.

  12. Silver-Doping Effects and Photostructural Transformation in Evaporated AS2S3 Thin Films.

    Science.gov (United States)

    1982-02-16

    of evaporated silver halide films. The details of the preparation of evaporated films of silver halides are reported by Junod at. al. (41 ) The...1980). 40. M.S. Chang, N.D. Hwang, J.T. Chen, Extended Abstr. Electrochem. Soc., 80-1, 692, (1980). 41. P. Junod , N. MHediger, B. Kilchoy. R. Steiger

  13. Evaporation thermal anslysis of Swallow-tailed Axial-grooved Heat Pipe

    Science.gov (United States)

    Zhang, Renping

    2018-03-01

    A detailed mathematical model that describes evaporating characteristics through thin liquid film at the evaporator section of swallow-tailed axial-grooved heat pipe was developed. The numerical simulation results about thin film profile, liquid-vapour interface temperature, evaporating rate and heat flux at the evaporating thin film region were given by the current investigation and the effect of superheat on the liquid-vapour interface temperature, evaporating mass rate and heat flux was discussed. Meanwhile, thermal model of the meniscus region at the evaporating section was developed to calculate the rate of heat transfer. The ratio of the heat conduction in the evaporating thin liquid film region and total heat rate were also discussed. It is indicated that the thickness of thin liquid film rises in a nearly linear fashion. The disjoining pressure can be neglected with increasing the liquid film thickness, tends to be negligibly small. The heat transfer rate at the intrinsic meniscus cannot be compared with that of the evaporating liquid film region.

  14. Synthesis of a large-sized mesoporous phosphosilicate thin film through evaporation-induced polymeric micelle assembly.

    Science.gov (United States)

    Li, Yunqi; Bastakoti, Bishnu Prasad; Imura, Masataka; Suzuki, Norihiro; Jiang, Xiangfen; Ohki, Shinobu; Deguchi, Kenzo; Suzuki, Madoka; Arai, Satoshi; Yamauchi, Yusuke

    2015-01-01

    A triblock copolymer, poly(styrene-b-2-vinyl pyridine-b-ethylene oxide) (PS-b-P2VP-b-PEO) was used as a soft template to synthesize large-sized mesoporous phosphosilicate thin films. The kinetically frozen PS core stabilizes the micelles. The strong interaction of the inorganic precursors with the P2VP shell enables the fabrication of highly robust walls of phosphosilicate and the PEO helps orderly packing of the micelles during solvent evaporation. The molar ratio of phosphoric acid and tetraethyl orthosilicate is crucial to achieve the final mesostructure. The insertion of phosphorus species into the siloxane network is studied by (29) Si and (31) P MAS NMR spectra. The mesoporous phosphosilicate films exhibit steady cell adhesion properties and show great promise as excellent materials in bone-growth engineering applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Global existence of solutions to a tear film model with locally elevated evaporation rates

    Science.gov (United States)

    Gao, Yuan; Ji, Hangjie; Liu, Jian-Guo; Witelski, Thomas P.

    2017-07-01

    Motivated by a model proposed by Peng et al. (2014) for break-up of tear films on human eyes, we study the dynamics of a generalized thin film model. The governing equations form a fourth-order coupled system of nonlinear parabolic PDEs for the film thickness and salt concentration subject to non-conservative effects representing evaporation. We analytically prove the global existence of solutions to this model with mobility exponents in several different ranges and present numerical simulations that are in agreement with the analytic results. We also numerically capture other interesting dynamics of the model, including finite-time rupture-shock phenomenon due to the instabilities caused by locally elevated evaporation rates, convergence to equilibrium and infinite-time thinning.

  16. Investigation of phase transformation for ferrite–austenite structure in stainless steel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Merakeb, Noureddine [Laboratory of Physical Metallurgy and Property of Materials (LM2PM), Metallurgy and Materials Engineering Department, Badji Mokhtar University, P.O. Box 12, Annaba 23000 (Algeria); Messai, Amel [Laboratoire d' Ingénierie et Sciences des Matériaux Avancés (ISMA), Institut des Sciences et Technologie, Abbès Laghrour University, Khenchela 40000 (Algeria); Ayesh, Ahmad I., E-mail: ayesh@qu.edu.qa [Department of Mathematics, Statistics and Physics, Qatar University, Doha (Qatar)

    2016-05-01

    In this work we report on phase transformation of 304 stainless steel thin films due to heat treatment. Ex-situ annealing was applied for evaporated 304 stainless steel thin films inside an ultra-high vacuum chamber with a pressure of 3 × 10{sup −7} Pa at temperatures of 500 °C and 600 °C. The structure of thin films was studied by X-ray diffraction (XRD) and conversion electron Mössbauer spectroscopy (CEMS) techniques. The results revealed a transformation from α-phase that exhibits a body-centered cubic structure (BCC) to γ-phase that exhibits a face-centered cubic (FCC) due to annealing. In addition, the percentage of γ-phase structure increased with the increase of annealing temperature. Annealing thin films increased the crystal size of both phases (α and γ), however, the increase was nonlinear. The results also showed that phase transformation was produced by recrystallization of α and γ crystals with a temporal evolution at each annealing temperature. The texture degree of thin films was investigated by XRD rocking curve method, while residual stress was evaluated using curvature method. - Highlights: • Stainless steel thin films were fabricated by thermal evaporation on quartz. • Alpha to gamma phase transformation of thin films was investigated. • Annealing of thin films reduces disruption in crystal lattice. • The stress of as-grown thin films was independent on the thin film thickness. • The stress of the thin films was reduced due to annealing.

  17. Organic/hybrid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    Science.gov (United States)

    Stiff-Roberts, Adrienne D.; Ge, Wangyao

    2017-12-01

    Some of the most exciting materials research in the 21st century attempts to resolve the challenge of simulating, synthesizing, and characterizing new materials with unique properties designed from first principles. Achievements in such development for organic and organic-inorganic hybrid materials make them important options for electronic and/or photonic devices because they can impart multi-functionality, flexibility, transparency, and sustainability to emerging systems, such as wearable electronics. Functional organic materials include small molecules, oligomers, and polymers, while hybrid materials include inorganic nanomaterials (such as zero-dimensional quantum dots, one-dimensional carbon nanotubes, or two-dimensional nanosheets) combined with organic matrices. A critically important step to implementing new electronic and photonic devices using such materials is the processing of thin films. While solution-based processing is the most common laboratory technique for organic and hybrid materials, vacuum-based deposition has been critical to the commercialization of organic light emitting diodes based on small molecules, for example. Therefore, it is desirable to explore vacuum-based deposition of organic and hybrid materials that include larger macromolecules, such as polymers. This review article motivates the need for physical vapor deposition of polymeric and hybrid thin films using matrix-assisted pulsed laser evaporation (MAPLE), which is a type of pulsed laser deposition. This review describes the development of variations in the MAPLE technique, discusses the current understanding of laser-target interactions and growth mechanisms for different MAPLE variations, surveys demonstrations of MAPLE-deposited organic and hybrid materials for electronic and photonic devices, and provides a future outlook for the technique.

  18. Atomistic modelling of evaporation and explosive boiling of thin film liquid argon over internally recessed nanostructured surface

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Mohammad Nasim, E-mail: nasim@me.buet.ac.bd.com; Shavik, Sheikh Mohammad, E-mail: shavik@me.buet.ac.bd.com; Rabbi, Kazi Fazle, E-mail: rabbi35.me10@gmail.com; Haque, Mominul, E-mail: mominulmarup@gmail.com [Department of Mechanical Engineering, Bangladesh University of Engineering & Technology (BUET) Dhaka-1000 (Bangladesh)

    2016-07-12

    Molecular dynamics (MD) simulations have been carried out to investigate evaporation and explosive boiling phenomena of thin film liquid argon on nanostructured solid surface with emphasis on the effect of solid-liquid interfacial wettability. The nanostructured surface considered herein consists of trapezoidal internal recesses of the solid platinum wall. The wetting conditions of the solid surface were assumed such that it covers both the hydrophilic and hydrophobic conditions and hence effect of interfacial wettability on resulting evaporation and boiling phenomena was the main focus of this study. The initial configuration of the simulation domain comprised of a three phase system (solid platinum, liquid argon and vapor argon) on which equilibrium molecular dynamics (EMD) was performed to reach equilibrium state at 90 K. After equilibrium of the three-phase system was established, the wall was set to different temperatures (130 K and 250 K for the case of evaporation and explosive boiling respectively) to perform non-equilibrium molecular dynamics (NEMD). The variation of temperature and density as well as the variation of system pressure with respect to time were closely monitored for each case. The heat flux normal to the solid surface was also calculated to illustrate the effectiveness of heat transfer for hydrophilic and hydrophobic surfaces in cases of both nanostructured surface and flat surface. The results obtained show that both the wetting condition of the surface and the presence of internal recesses have significant effect on normal evaporation and explosive boiling of the thin liquid film. The heat transfer from solid to liquid in cases of surface with recesses are higher compared to flat surface without recesses. Also the surface with higher wettability (hydrophilic) provides more favorable conditions for boiling than the low-wetting surface (hydrophobic) and therefore, liquid argon responds quickly and shifts from liquid to vapor phase faster in

  19. Raman spectroscopy of optical properties in CdS thin films

    Directory of Open Access Journals (Sweden)

    Trajić J.

    2015-01-01

    Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003

  20. Preparation and characterization of co-evaporated Cu{sub 2}ZnGeSe{sub 4} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Uday Bhaskar, P.; Suresh Babu, G.; Kishore Kumar, Y.B.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

    2013-05-01

    Cu{sub 2}ZnGeSe{sub 4} (CZGSe), a member of Cu{sub 2}–II–IV–VI{sub 4} family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} which have been explored in recent years as alternate to CuInGaSe{sub 2} solar cells. The effect of substrate temperature (523 K–723 K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723 K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu{sub (2−x)}Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a = 0.563 nm, c = 1.101 nm. The direct optical band gap of CZGSe films is found to be 1.63 eV which is close to ideal band gap of 1.50 eV for the highest photovoltaic conversion efficiency. The films are found to be p-type. - Highlights: • Synthesis of Cu{sub 2}ZnGeSe{sub 4} films for solar cell absorber layer • Effect of substrate temperature on the growth of co-evaporated Cu{sub 2}ZnGeSe{sub 4} films • X-ray diffraction, Raman and morphological studies of Cu{sub 2}ZnGeSe{sub 4} thin films.

  1. Characterization of lysozyme films produced by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Kingshott, Peter

    2007-01-01

    Thin lysozyme films of thickness up to more than 100 nm have been produced in a dry environment by MAPLE (matrix assisted pulsed laser evaporation) from a water ice matrix. Analysis of the films demonstrates that a significant part of the lysozyme molecules is transferred to the substrate without...

  2. Ion assisted deposition of thermally evaporated Ag and Al films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Makous, J.L.; Kim, S.Y.; University of Arizona, Physics Department, Tucson, Arizona 85721; Aju University, Physics Department, Suwon, Korea)

    1989-01-01

    Optical, electrical, and microstructural effects of Ar ion bombardment and Ar incorporation on thermally evaporated Ag and Al thin films are investigated. The results show that as the momentum supplied to the growing films by the bombarding ions per arriving metal atom increases, the refractive index at 632.8 nm increases and the extinction coefficient decreases, lattice spacing expands, grain size decreases, electrical resistivity increases, and trapped Ar increases slightly. In Ag films, stress reverses from tensile to compressive and in Al films compressive stress increases. In the Al films the change in optical constants can be explained by the variation in void volume. The reversal of stress from tensile to compressive in Ag films requires a threshold level of momentum. The increase in electrical resistivity is related to the decrease in grain size and increase in trapped Ar in both types of film. Many of these properties correlate well with the momentum transferred, suggesting that the momentum is an important physical parameter in describing the influence of ion beam on growing thin films and determining the characteristics of thin metal films prepared by ion assisted deposition

  3. Internal stress control of boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M. [Osaka Univ., Suita (Japan). Graduate Sch. of Eng.

    1998-09-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s{sup -1} and substrate temperature of 300 C. (orig.) 12 refs.

  4. Internal stress control of boron thin film

    International Nuclear Information System (INIS)

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M.

    1998-01-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s -1 and substrate temperature of 300 C. (orig.)

  5. Optical properties of CeO 2 thin films

    Indian Academy of Sciences (India)

    Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10-6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly ...

  6. Effect of deposition distance on thickness and microstructure of silicon thin film produced by electron beam evaporation; Efeito da distancia de deposicao na espessura e microestrutura de filme fino obtido por evaporacao por feixe de eletrons

    Energy Technology Data Exchange (ETDEWEB)

    Toledo, T.F.; Ramanery, F.P.; Branco, J.R.T. [Fundacao Centro Tecnologico de Minas Gerais, Belo Horizonte, MG (Brazil)], e-mail: thalitaqui@yahoo.com.br; Cunha, M.A. [Acos Especiais Itabira S.A. (Acesita), Belo Horizonte, MG (Brazil)

    2006-07-01

    The interest for materials with new characteristics and properties made thin films an area of highest research interest. Silicon thin films have been widely used in solar cells, being the main active layer. In this work, the effect of deposition distance on thickness and microstructure of silicon films was investigated. The electron beam evaporation technique with argon plasma assistance was used to obtain films on stainless steel 304, Fe-Si alloy and soda lime glass. The experiments were made varying electron beam current and deposition pressure. The results are discussed based on Hertz-Knudsen's law and thin films microstructure evolution models. The samples were characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction and profilometer. (author)

  7. Thin film soft X-ray absorption filters

    International Nuclear Information System (INIS)

    Stattin, H.

    1992-11-01

    This report discusses the composition, reparation and performance of soft x-ray transmission filters for a water window soft x-ray microscope. Unbacked thin films of aluminum, silver and vanadium/aluminum were made by evaporation on a substrate from which they were released. Measured transmittances agree reasonably well with calculations. The report also includes some related theory and discussions about film preparation methods, film contamination and evaluation methods. 33 refs

  8. Thin films of molecular materials synthesized from fisher's carbene ferrocenyl: Film formation and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Vergara, M.E. [Coordinacion de Ingenieria Mecatronica. Escuela de Ingenieria, Universidad Anahuac del Norte. Avenida Lomas de la Anahuac s/n, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico)], E-mail: elena.sanchez@anahuac.mx; Ortiz, A. [Instituto de Investigaciones en Materiales. Universidad Nacional Autonoma de Mexico. A. P. 70-360, 04510, Mexico, DF (Mexico); Alvarez-Toledano, C.; Moreno, A. [Instituto de Quimica, Universidad Nacional Autonoma de Mexico. Circuito Exterior, Ciudad Universitaria, 04510, Mexico, DF (Mexico); Alvarez, J.R. [Instituto Tecnologico y de Estudios Superiores de Monterrey, Campus Ciudad de Mexico. Calle del Puente 222, Col. Ejidos de Huipulco, 14380, Mexico, DF (Mexico)

    2008-07-31

    The synthesis of materials from Fisher's carbene ferrocenyl of the elements chromium, molybdenum and tungsten was carried out. The Fisher's compounds that were synthesized included the following combinations of two different metallic atoms: iron with chromium, iron with molybdenum and iron with tungsten. The molecular solids' preparation was done in electro-synthesis cells with platinum electrodes. Thin films were prepared by vacuum thermal evaporation on quartz substrates and crystalline silicon wafers. Pellets and thin films from these compounds were characterized by Fourier transform infrared spectroscopy, scanning electron microscopy, energy-dispersive spectroscopy, atomic force microscopy and ellipsometry. The powder and thin films synthesized from these materials show the same intra-molecular bonds shown by infrared spectroscopy results, suggesting that thermal evaporation does not alter these bonds in spite of the thin films being amorphous, in contrast with other bimetallic complexes where material decomposition occurs. The differences in the conductivity values of the prepared films are very small, so they may be attributed to the different metallic ions employed in each case. The tungsten complex exhibits a higher conductivity than the molybdenum and chromium complexes at room temperature. Electrical conductivity values found for thin films are higher than for pellets made of the same molecular materials.

  9. Thin films prepared from tungstate glass matrix

    Energy Technology Data Exchange (ETDEWEB)

    Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

    2008-01-30

    Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.

  10. Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

    Science.gov (United States)

    Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

    2018-02-01

    In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

  11. 1/f noise in titanium doped aluminum thin film deposited by electron beam evaporation method and its dependence on structural variation with temperature

    Science.gov (United States)

    Ananda, P.; Vedanayakam, S. Victor; Thyagarajan, K.; Nandakumar, N.

    2018-05-01

    A brief review of Titanium doped Aluminum film has many attractive properties such as thermal properties and 1/f noise is highlighted. The thin film devices of Titanium doped alluminium are specially used in aerospace technology, automotive, biomedical fields also in microelectronics. In this paper, we discus on 1/f noise and nonlinear effects in titanium doped alluminium thin films deposited on glass substrate using electron beam evaporation for different current densities on varying temperatures of the film. The plots are dawn for 1/f noise of the films at different temperatures ranging from 300°C to 450°C and the slopes are determined. The studies shows a higher order increment in FFT amplitude of low frequency 1/f noise in thin films at annealing temperature 400°C. In this technology used in aerospace has been the major field of application of titanium doped alluminium, being one of the major challenges of the development of new alloys with improved strength at high temperature, wide chord Titanium doped alluminium fan blades increases the efficiency while reducing 1/f noise. Structural properties of XRD is identified.

  12. Characterization of electron beam deposited thin films of HfO2 and binary thin films of (HfO2:SiO2) by XRD and EXAFS measurements

    International Nuclear Information System (INIS)

    Das, N.C.; Sahoo, N.K.; Bhattacharyya, D.; Thakur, S.; Kamble, N.M.; Nanda, D.; Hazra, S.; Bal, J.K.; Lee, J.F.; Tai, Y.L.; Hsieh, C.A.

    2009-10-01

    In this report, we have discussed the microstructure and the local structure of composite thin films having varying hafnia and silica compositions and prepared by reactive electron beam evaporation. XRD and EXAFS studies have confirmed that the pure hafnium oxide thin film has crystalline microstructure whereas the films with finite hafnia and silica composition are amorphous. The result of EXAFS analysis has shown that the bond lengths as well as coordination numbers around hafnium atom change with the variation of hafnia and silica compositions in the thin film. Finally, change of bond lengths has been correlated with change of refractive index and band gap of the composite thin films. (author)

  13. Structural, morphological, gas sensing and photocatalytic characterization of MoO3 and WO3 thin films prepared by the thermal vacuum evaporation technique

    Science.gov (United States)

    Arfaoui, A.; Touihri, S.; Mhamdi, A.; Labidi, A.; Manoubi, T.

    2015-12-01

    Thin films of molybdenum trioxide and tungsten trioxide were deposited on glass substrates using a simplified thermal evaporation under vacuum method monitored by heat treatment in flowing oxygen at 500 °C for 1 h. The structural and morphological properties of the films were investigated using X-ray diffraction, Raman spectroscopy, atomic force microscopy and scanning electron microscopy. The X-ray diffraction analysis shows that the films of MoO3 and WO3 were well crystallized in orthorhombic and monoclinic phase respectively with the crystallites preferentially oriented toward (2 0 0) direction parallel a-axis for both samples. In literature, we have shown in previous papers that structural and surface morphology of metal thin films play an important role in the gas detection mechanism. In this article, we have studied the response evolution of MoO3 and WO3 thin films sensors ethanol versus time, working temperature and the concentration of the ethanol. It was found that these films had high sensitivity to ethanol, which made them as a good candidate for the ethanol sensor. Finally, the photocatalytic activity of the samples was evaluated with respect to the degradation reaction of a wastewater containing methylene blue (MB) under UV-visible light irradiation. The molybdenum trioxide exhibits a higher degradation rate than the tungsten trioxide thin films under similar experimental conditions.

  14. Deposition techniques for the preparation of thin film nuclear targets

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1987-07-01

    This review commences with a brief description of the basic principles that regulate vacuum evaporation and the physical processes involved in thin film formation, followed by a description of the experimental methods used. The principle methods of heating the evaporant are detailed and the means of measuring and controlling the film thickness are elucidated. Types of thin film nuclear targets are considered and various film release agents are listed. Thin film nuclear target behaviour under ion-bombardment is described and the dependence of nuclear experimental results upon target thickness and uniformity is outlined. Special problems associated with preparing suitable targets for lifetime measurements are discussed. The causes of stripper-foil thickening and breaking under heavy-ion bombardment are considered. A comparison is made between foils manufactured by a glow discharge process and those produced by vacuum sublimation. Consideration is given to the methods of carbon stripper-foil manufacture and to the characteristics of stripper-foil lifetimes are considered. Techniques are described that have been developed for the fabrication of special targets, both from natural and isotopically enriched material, and also of elements that are either chemically unstable, or thermally unstable under irradiation. The reduction of metal oxides by the use of hydrogen or by utilising a metallothermic technique, and the simultaneous evaporation of reduced rare earth elements is described. A comprehensive list of the common targets is presented

  15. Synthesis and characterization of Cu–Al–Ni shape memory alloy multilayer thin films

    International Nuclear Information System (INIS)

    Gómez-Cortés, J.F.; San Juan, J.; López, G.A.; Nó, M.L.

    2013-01-01

    Among active materials, shape memory alloys are well recognized for their work output density. Because of that, these alloys have attracted much attention to be used in micro/nano electromechanical systems. In the present work, the electron beam evaporation technique has been used to growth, by a multilayer method, two shape memory alloy thin films with different Cu–Al–Ni composition. Multilayers have been further thermally treated to produce the alloys by solid solution diffusion. The produced multilayers have been characterized and the presence of the martensite phase in the obtained thin films was studied. Furthermore, the influence of two different coatings onto the Si substrates, namely Si/SiO 2 and Si/Si 3 N 4 , was investigated. Mechanically stable, not detaching from the substrates, Cu–Al–Ni shape memory alloy thin films, about 1 micrometre thick, showing a martensitic transformation have been produced. - Highlights: ► Multilayer thin films of Cu–Al–Ni shape memory alloys produced by e-beam evaporation. ► SiN X 200 nm thick coating is good for high quality Cu–Al–Ni shape memory thin films. ► Thermal treatment renders Cu–Al–Ni multilayer in homogeneous martensite thin film

  16. Temperature studies of optical parameters of (Ag3AsS3)0.6(As2S3)0.4 thin films prepared by rapid thermal evaporation and pulse laser deposition

    Science.gov (United States)

    Studenyak, I. P.; Kutsyk, M. M.; Buchuk, M. Yu.; Rati, Y. Y.; Neimet, Yu. Yu.; Izai, V. Yu.; Kökényesi, S.; Nemec, P.

    2016-02-01

    (Ag3AsS3)0.6(As2S3)0.4 thin films were deposited using rapid thermal evaporation (RTE) and pulse laser deposition (PLD) techniques. Ag-enriched micrometre-sized cones (RTE) and bubbles (PLD) were observed on the thin film surface. Optical transmission spectra of the thin films were studied in the temperature range 77-300 K. The Urbach behaviour of the optical absorption edge in the thin films due to strong electron-phonon interaction was observed, the main parameters of the Urbach absorption edge were determined. Temperature dependences of the energy position of the exponential absorption edge and the Urbach energy are well described in the Einstein model. Dispersion and temperature dependences of refractive indices were analysed; a non-linear increase of the refractive indices with temperature was revealed. Disordering processes in the thin films were studied and compared with bulk composites, the differences between the thin films prepared by RTE and PLD were analysed.

  17. Optical and structural study of In{sub 2}S{sub 3} thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu{sub 3}BiS{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mesa, F., E-mail: fgmesar@unal.edu.co [Unidad de Estudios Universitarios, Colegio Mayor de Nuestra Señora del Rosario, Cra. 24 N° 63C-69, Bogotá (Colombia); Chamorro, W. [Université de Lorraine, Institut Jean Lamour, Nancy (France); Hurtado, M. [Departamento de Quimica, Universidad Nacional de Colombia, Cra. 30 N° 45-03, Bogotá (Colombia); Departamento de Física, Universidad de los Andes, Calle 21 No. 1-20, Bogotá (Colombia)

    2015-09-30

    Highlights: • In{sub 2}S{sub 3} thin films usually grow like an ultrathin. • Samples grown by CBD have a higher degree of coverage of the substrate unlike co-evaporation method. • Solar cells of Al/TCO/In{sub 2}S{sub 3}/Cu{sub 3}BiS{sub 3}/Mo structure. • In{sub 2}S{sub 3} thin films were deposited on Cu{sub 3}BiS{sub 3} (CBS), with of In{sub 2}S{sub 3} β-phase with tetragonal structure. - Abstract: We present the growth of In{sub 2}S{sub 3} onto Cu{sub 3}BiS{sub 3} layers and soda-lime glass (SLG) substrates by using chemical bath deposition (CBD) and physical co-evaporation. The results reveal that the microstructure and the optical properties of the In{sub 2}S{sub 3} films are highly dependent on the growth method. X-ray diffractrograms show that In{sub 2}S{sub 3} films have a higher crystallinity when growing by co-evaporation than by CBD. In{sub 2}S{sub 3} thin films grown by CBD with a thickness below 170 nm have an amorphous structure however when increasing the thickness the films exhibit two diffraction peaks associated to the (1 0 3) and (1 0 7) planes of the β-In{sub 2}S{sub 3} tetragonal structure. It was also found that the In{sub 2}S{sub 3} films present an energy bandgap (E{sub g}) of about 2.75 eV, regardless of the thickness of the samples.

  18. Preparation of thin films by ablation with ANACONDA ion beam generator

    Energy Technology Data Exchange (ETDEWEB)

    Yatsui, Kiyoshi; Jiang, Weihua [Nagaoka University of Technology (Japan). Lab. of Beam Technology; Davis, H A; Olson, C J; Waganaar, W J; Rej, D [Los Alamos National Laboratory, Los Alamos, NM (United States)

    1997-12-31

    Thin films of silicon carbide were produced by using the technology of ion beam evaporation. Various analytical methods were used to analyze film thickness, film composition and crystallizability for samples obtained with different target-substrate distances. (author). 4 figs., 4 refs.

  19. Photoemission Spectroscopy Characterization of Attempts to Deposit MoO2 Thin Film

    Directory of Open Access Journals (Sweden)

    Irfan

    2011-01-01

    Full Text Available Attempts to deposit molybdenum dioxide (MoO2 thin films have been described. Electronic structure of films, deposited by thermal evaporation of MoO2 powder, had been investigated with ultraviolet photoemission and X-ray photoemission spectroscopy (UPS and XPS. The thermally evaporated films were found to be similar to the thermally evaporated MoO3 films at the early deposition stage. XPS analysis of MoO2 powder reveals presence of +5 and +6 oxidation states in Mo 3d core level along with +4 state. The residue of MoO2 powder indicates substantial reduction in higher oxidation states while keeping +4 oxidation state almost intact. Interface formation between chloroaluminum phthalocyanine (AlPc-Cl and the thermally evaporated film was also investigated.

  20. Development of Falling Film Heat Transfer Coefficient for Industrial Chemical Processes Evaporator Design

    KAUST Repository

    Shahzad, Muhammad Wakil

    2018-03-07

    In falling film evaporators, the overall heat transfer coefficient is controlled by film thickness, velocity, liquid properties and the temperature differential across the film layer. This chapter presents the heat transfer behaviour for evaporative film boiling on horizontal tubes, but working at low pressures of 0.93–3.60 kPa as well as seawater salinity of 15,000–90,000 mg/l or ppm. Owing to a dearth of literature on film-boiling at these conditions, the chapter is motivated by the importance of evaporative film-boiling in the process industries. It is observed that in addition to the above-mentioned parameters, evaporative heat transfer of seawater is affected by the emergence of micro-bubbles within the thin film layer, particularly when the liquid saturation temperatures drop below 25°C (3.1 kPa). Such micro-bubbles are generated near to the tube wall surfaces, and they enhanced the heat transfer by two or more folds when compared with the predictions of conventional evaporative film-boiling. The appearance of micro-bubbles is attributed to the rapid increase in the specific volume of vapour, i.e. dv/dT, at low saturation temperature conditions. A new correlation is thus proposed in this chapter and it shows good agreement to the measured data with an experimental uncertainty less than ±8%.

  1. Study of structural and morphological properties of thermally evaporated Sn{sub 2}Sb{sub 6}S{sub 11} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Mehrez, N., E-mail: najia.benmehrez@gmail.com [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Khemiri, N. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Kanzari, M. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Institut Préparatoire aux Etudes d’Ingénieurs de Tunis Montfleury, Université de Tunis (Tunisia)

    2016-10-01

    In this study, we report the structural and morphological properties of the new material Sn{sub 2}Sb{sub 6}S{sub 11} thin films prepared on glass substrates by vacuum thermal evaporation at various substrate temperatures (30, 60, 100, 140, 180 and 200 °C). Sn{sub 2}Sb{sub 6}S{sub 11} ingot was synthesized by the horizontal Bridgman technique. The structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The films were characterized for their structural properties by using XRD. All films were polycrystalline in nature. The variations of the structural parameters of the films with the substrate temperature were investigated. The results show that the crystallite sizes increase as the substrate temperature increases. The morphological properties of the films were analyzed by atomic force microscopy (AFM). The roughness and the topography of the surface of the films strongly depend on the substrate temperature. - Highlights: • Sn{sub 2}Sb{sub 6}S{sub 11} powder was successfully synthesized by the horizontal Bridgman technique. • Sn{sub 2}Sb{sub 6}S{sub 11} films were grown by thermal evaporation at different substrate temperatures. • Structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were investigated. • The effect of the substrate temperature on structural and morphological of Sn{sub 2}Sb{sub 6}S{sub 11} films properties was studied.

  2. Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated As2Se3 Thin Films

    Directory of Open Access Journals (Sweden)

    Pankaj Sharma

    2008-01-01

    Full Text Available The present paper reports the effect of Ge addition on the optical band gap and refractive index of As2Se3 thin films. Thin films of As2Se3 and (As2Se390Ge10 were prepared by thermal evaporation technique at base pressure 10−4 Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to As2Se3. The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.

  3. Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

    Science.gov (United States)

    Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

    2016-10-01

    ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

  4. Investigations of electrical and optical properties of functional TCO thin films

    Directory of Open Access Journals (Sweden)

    Domaradzki Jarosław

    2015-06-01

    Full Text Available Transparent conducting oxide (TCO films of indium-tin-oxide were evaporated on the surface of silicon wafers after phosphorous diffusion and on the reference glass substrates. The influence of deposition process parameters (electron beam current, oxygen flow and the substrate temperature on optical and electrical properties of evaporated thin films were investigated by means of resistivity measurements and optical spectrophotometry. The performance of prepared thin films was judged by calculated figure of merit and the best result was obtained for the sample deposited on the substrate heated to the 100 °C and then removed from the deposition chamber and annealed in an air for 5 minutes at 400 °C. Refractive index and extinction coefficient were evaluated based on measured transmission spectra and used for designing of antireflection coating for solar cell. The obtained results showed that prepared TCO thin films are promising as a part of counter electrode in crystalline silicon solar cell construction.

  5. Thermal and structural properties of spray pyrolysed CdS thin film

    Indian Academy of Sciences (India)

    Unknown

    Thermal diffusivity and conductivity in these films decrease at least two orders compared with bulk. ... Afifi et al. (1986) prepared evaporated thin film on glass substrate. ... phase of CdS and the identification of the peaks indicate that the film is ...

  6. Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Z., E-mail: ziqian.ding@materials.ox.ac.uk; Abbas, G. A.; Assender, H. E. [Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom); Morrison, J. J.; Sanchez-Romaguera, V.; Yeates, S. G. [School of Chemistry, University of Manchester, Manchester M13 9PL (United Kingdom); Taylor, D. M. [School of Electronic Engineering, Bangor University, Bangor LL57 1UT (United Kingdom)

    2013-12-02

    A systematic investigation has been undertaken, in which thin polymer buffer layers with different ester content have been spin-coated onto a flash-evaporated, cross-linked diacrylate gate-insulator to form bottom-gate, top-contact organic thin-film transistors. The highest device mobilities, ∼0.65 cm{sup 2}/V s and ∼1.00 cm{sup 2}/V s for pentacene and dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b]thiophene (DNTT), respectively, were only observed for a combination of large-grain (∼1–2 μm) semiconductor morphology coupled with a non-polar dielectric surface. No correlation was found between semiconductor grain size and dielectric surface chemistry. The threshold voltage of pentacene devices shifted from −10 V to −25 V with decreasing surface ester content, but remained close to 0 V for DNTT.

  7. Effect of the RE (RE = Eu, Er) doping on the structural and textural properties of mesoporous TiO2 thin films obtained by evaporation induced self-assembly method

    International Nuclear Information System (INIS)

    Borlaf, Mario; Caes, Sebastien; Dewalque, Jennifer; Colomer, María Teresa; Moreno, Rodrigo; Cloots, Rudi; Boschini, Frederic

    2014-01-01

    Polymeric sol–gel route has been used for the preparation of TiO 2 and RE 2 O 3– TiO 2 (RE = Eu, Er) mesoporous thin films by evaporation induced self-assembly method using Si (100) as a substrate. The influence of the relative humidity (RH) on the preparation of the film has been studied being necessary to work under 40% RH in order to obtain homogeneous and transparent thin films. The films were annealed at different temperatures until 900 °C/1 h and the anatase crystallization and its crystal size evolution were followed by low angle X-ray diffraction. Neither the anatase–rutile transition nor the formation of other compounds was observed in the studied temperature range. Ellipsoporosimetry studies demonstrated that the thickness of the thin films did not change after calcination at 500 °C, the porosity was constant until 700 °C, the pore size increased and the specific surface area decreased with temperature. Moreover, the effect of the doping with Er 3+ and Eu 3+ was studied and a clear inhibition of the crystal growth and the sintering process was detected (by transmission electron and atomic force microscopy) when the doped films are compared with the undoped ones. Finally, Eu 3+ and Er 3+ f–f transitions were detected by PL measurements. - Highlights: • Eu and Er–TiO 2 mesoporous films were prepared by evaporation induced self-assembly. • Influence of humidity on porosity and photoluminescent properties has been tested. • Influence of calcination on structural and textural properties has been also studied. • f–f transitions indicate that the thin films are active photoluminescent materials

  8. Room temperature ferroelectricity in continuous croconic acid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  9. Enhanced electrochromic coloration in Ag nanoparticle decorated WO3 thin films

    International Nuclear Information System (INIS)

    Kharade, Rohini R.; Mali, Sawanta S.; Patil, Satish P.; Patil, Kashinath R.; Gang, Myong G.; Patil, Pramod S.; Kim, Jin H.; Bhosale, Popatrao N.

    2013-01-01

    Highlights: • Electrochromic WO 3 /Ag nanocomposites prepared by hybrid physico-chemical route. • XRD and XPS results confirm formation of Ag 8 W 4 O 16 phase. • WO 3 /Ag thin films showed good optical transmittance change and coloration efficiency. • SPR enhanced coloration and bleaching mechanism is well explained for electrochromism. • Color stimuli are quantified using CIE chromaticity principles. -- Abstract: WO 3 /Ag composite thin films were prepared by microwave assisted sol–gel synthesis (MW-SGS) of WO 3 followed by vacuum evaporation of Ag nanoparticles and their enhanced electrochromic coloration was investigated. The composition and morphology of WO 3 thin films with different thickness of Ag layer obtained by vacuum evaporation were investigated. Distinct plasmon absorption bands of Ag nanoparticle thin films were obtained. The optical band gap energy of WO 3 /Ag films decreased with increasing the Ag layer thickness. The surface of these films has been examined using X-ray photoelectron spectroscopy (XPS) to gain information about the chemical states of species present at surfaces. Experimental results indicated that the conductivity of the films increased after surface modification by Ag layer. To investigate the origin of enhanced electrochromic absorption in optical properties, working electrode consisting of WO 3 /Ag thin film was used and observed the optical properties during electrochemical reaction. It was found that composite electrode shows enhancement in electrochromic properties in terms of optical modulation (ΔOD) and coloration efficiency (η)

  10. Annealing effect on physical properties of evaporated molybdenum oxide thin films for ethanol sensing

    Energy Technology Data Exchange (ETDEWEB)

    Touihri, S., E-mail: s_touihri@yahoo.fr [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Arfaoui, A.; Tarchouna, Y. [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Labidi, A. [Laboratoire Matériaux, Molécules et Applications, IPEST, BP 51 La Marsa 2070, Tunis (Tunisia); Amlouk, M. [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Bernede, J.C. [LUNAM, Universite de Nantes, Moltech Anjou, CNRS, UMR 6200, FSTN, 2 Rue de la houssiniere, BP 92208, Nantes F-44322 (France)

    2017-02-01

    Highlights: • Thermally grown molybdenum oxide films are amorphous, oxygen deficient and gas sensing. • Air or vacuum annealing transforms them into a sub-stoichiometric MoO{sub 3−x} phase. • The samples annealed at 500 °C in oxygen were crystallized and identified as pure orthorhombic MoO{sub 3} phase. • The conduction process and sensing mechanism of MoO{sub 3-x} to ethanol have been studied. - Abstract: This paper deals with some physical investigations on molybdenum oxide thin films growing on glass substrates by the thermal evaporation method. These films have been subjected to an annealing process under vacuum, air and oxygen at various temperatures 673, 723 and 773 K. First, the physical properties of these layers were analyzed by means of X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and optical measurements. These techniques have been used to investigate the oxygen index in MoO{sub x} properties during the heat treatment. Second, from the reflectance and transmittance optical measurements, it was found that the direct band gap energy value increased from 3.16 to 3.90 eV. Finally, the heat treatments reveal that the oxygen index varies in such molybdenum oxides showing noticeably sensitivity toward ethanol gas.

  11. Full-Scale Testing Technology Maturation Of A Thin Film Evaporator For High-Level Liquid Waste Management At Hanford - 12125

    International Nuclear Information System (INIS)

    Tedeschi, A.R.; Corbett, J.E.; Wilson, R.A.; Larkin, J.

    2012-01-01

    Simulant testing of a full-scale thin-film evaporator system was conducted in 2011 for technology development at the Hanford tank farms. Test results met objectives of water removal rate, effluent quality, and operational evaluation. Dilute tank waste simulant, representing a typical double-shell tank supernatant liquid layer, was concentrated from a 1.1 specific gravity to approximately 1.5 using a 4.6 m 2 (50 ft 2 ) heated transfer area Rototherm(reg s ign) evaporator from Artisan Industries. The condensed evaporator vapor stream was collected and sampled validating efficient separation of the water. An overall decontamination factor of 1.2E+06 was achieved demonstrating excellent retention of key radioactive species within the concentrated liquid stream. The evaporator system was supported by a modular steam supply, chiller, and control computer systems which would be typically implemented at the tank farms. Operation of these support systems demonstrated successful integration while identifying areas for efficiency improvement. Overall testing effort increased the maturation of this technology to support final deployment design and continued project implementation.

  12. FULL SCALE TESTING TECHNOLOGY MATURATION OF A THIN FILM EVAPORATOR FOR HIGH-LEVEL LIQUID WASTE MANAGEMENT AT HANFORD - 12125

    Energy Technology Data Exchange (ETDEWEB)

    TEDESCHI AR; CORBETT JE; WILSON RA; LARKIN J

    2012-01-26

    Simulant testing of a full-scale thin-film evaporator system was conducted in 2011 for technology development at the Hanford tank farms. Test results met objectives of water removal rate, effluent quality, and operational evaluation. Dilute tank waste simulant, representing a typical double-shell tank supernatant liquid layer, was concentrated from a 1.1 specific gravity to approximately 1.5 using a 4.6 m{sup 2} (50 ft{sup 2}) heated transfer area Rototherm{reg_sign} evaporator from Artisan Industries. The condensed evaporator vapor stream was collected and sampled validating efficient separation of the water. An overall decontamination factor of 1.2E+06 was achieved demonstrating excellent retention of key radioactive species within the concentrated liquid stream. The evaporator system was supported by a modular steam supply, chiller, and control computer systems which would be typically implemented at the tank farms. Operation of these support systems demonstrated successful integration while identifying areas for efficiency improvement. Overall testing effort increased the maturation of this technology to support final deployment design and continued project implementation.

  13. Thin films growth parameters in MAPLE; application to fibrinogen

    International Nuclear Information System (INIS)

    Jelinek, M; Cristescu, R; Kocourek, T; Vorlicek, V; Remsa, J; Stamatin, L; Mihaiescu, D; Stamatin, I; Mihailescu, I N; Chrisey, D B

    2007-01-01

    Increasingly requirements on the thin film quality of functionalized materials are efficiently met by a novel laser processing technique - Matrix Assisted Pulsed Laser Evaporation (MAPLE). Examples of deposition conditions and main features characteristic to film growth rate of MAPLE-fabricated organic materials are summarized. MAPLE experimental results are compared with ones corresponding to the classical Pulsed Laser Deposition (PLD). In particular, the results of investigation of MAPLE-deposited fibrinogen blood protein thin films using a KrF* excimer laser and characterized by FTIR and Raman spectrometry are reported

  14. Electrical and optical transport characterizations of electron beam evaporated V doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Md. Ariful, E-mail: arifapee19@gmail.com [Department of Physics, Rajshahi University of Engineering & Technology (RUET), Rajshahi (Bangladesh); Roy, Ratan Chandra; Hossain, Jaker; Julkarnain, Md.; Khan, Khairul Alam [Department of Applied Physics & Electronic Engineering, University of Rajshahi (Bangladesh)

    2017-01-15

    Vanadium (5 at. %) doped Indium Oxide (V: In{sub 2}O{sub 3}) thin films with different thicknesses (50 nm, 100 nm and 150 nm) were prepared onto glass substrate by electron beam evaporation technique in a vacuum of about 4 x 10{sup -3} Pa. X-ray diffraction (XRD) pattern revealed that the prepared films of thickness 50 nm are amorphous in nature. Temperature dependence of electrical resistivity was studied in the 300 < T < 475 K temperature range. The films exhibit a metallic behavior in the 300 < T < 380 K range with a positive temperature coefficient of the resistivity (TCR), whereas at T > 380 K, the conduction behavior turns into a semiconductor with a negative TCR. Optical studies revealed that the films of thickness 50 nm possess high transmittance of about 86 % in the near-infrared spectral region. The direct optical band gap lies between 3.26 and 3.00 eV depending on the film thickness. (author)

  15. Water-evaporation reduction by duplex films: application to the human tear film.

    Science.gov (United States)

    Cerretani, Colin F; Ho, Nghia H; Radke, C J

    2013-09-01

    Water-evaporation reduction by duplex-oil films is especially important to understand the physiology of the human tear film. Secreted lipids, called meibum, form a duplex film that coats the aqueous tear film and purportedly reduces tear evaporation. Lipid-layer deficiency is correlated with the occurrence of dry-eye disease; however, in-vitro experiments fail to show water-evaporation reduction by tear-lipid duplex films. We review the available literature on water-evaporation reduction by duplex-oil films and outline the theoretical underpinnings of spreading and evaporation kinetics that govern behavior of these systems. A dissolution-diffusion model unifies the data reported in the literature and identifies dewetting of duplex films into lenses as a key challenge to obtaining significant evaporation reduction. We develop an improved apparatus for measuring evaporation reduction by duplex-oil films including simultaneous assessment of film coverage, stability, and temperature, all under controlled external mass transfer. New data reported in this study fit into the larger body of work conducted on water-evaporation reduction by duplex-oil films. Duplex-oil films of oxidized mineral oil/mucin (MOx/BSM), human meibum (HM), and bovine meibum (BM) reduce water evaporation by a dissolution-diffusion mechanism, as confirmed by agreement between measurement and theory. The water permeability of oxidized-mineral-oil duplex films agrees with those reported in the literature, after correction for the presence of mucin. We find that duplex-oil films of bovine and human meibum at physiologic temperature reduce water evaporation only 6-8% for a 100-nm film thickness pertinent to the human tear film. Comparison to in-vivo human tear-evaporation measurements is inconclusive because evaporation from a clean-water surface is not measured and because the mass-transfer resistance is not characterized. Copyright © 2013 Elsevier B.V. All rights reserved.

  16. Laser damage studies on MgF2 thin films

    International Nuclear Information System (INIS)

    Protopapa, Maria Lucia; De Tomasi, Ferdinando; Perrone, Maria Rita; Piegari, Angela; Masetti, Enrico; Ristau, Detlev; Quesnel, Etienne; Duparre, Angela

    2001-01-01

    The results of laser damage studies performed at 248 nm (KrF excimer laser) on MgF 2 thin films deposited by different techniques (electron-beam evaporation, thermal boat evaporation, and ion-beam sputtering) on fused silica and CaF 2 substrates are presented. We find that the films deposited on CaF 2 substrates by the electron-beam evaporation technique present the highest damage threshold fluence (9 J/cm2). The photoacoustic (PA) beam deflection technique was employed, in addition to microscopical inspection, to determine laser damage fluences. We confirm, by scanning electron microscopy analysis of the damaged spots, the capability of the PA technique to provide information on the mechanisms leading to damage. The dependence of both laser damage fluence and damage morphology on the film deposition technique, as well as on the film substrate, is discussed

  17. Characterization of Sucrose Thin Films for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    S. L. Iconaru

    2011-01-01

    Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.

  18. Significant questions in thin liquid film heat transfer

    International Nuclear Information System (INIS)

    Bankoff, S.G.

    1994-01-01

    Thin liquid films appear in many contexts, such as the cooling of gas turbine blade tips, rocket engines, microelectronics arrays, and hot fuel element surfaces in hypothetical nuclear reactor accidents. Apart from these direct cooling applications of thin liquid layers, thin films form a crucial element in determining the allowable heat flux limits in boiling. This is because the last stages of dryout almost invariably involve the rupture of a residual liquid film, either as a microlayer underneath the bubbles, or a thin annular layer in a high-quality burnout scenario. The destabilization of these thin films under the combined actions of shear stress, evaporation, and thermocapillary effects is quite complex. The later stages of actual rupture to form dry regions, which then expand, resulting in possible overheating, are even more complex and less well understood. However, significant progress has been made in understanding the behavior of these thin films, which are subject to competing instabilities prior to actual rupture. This will be reviewed briefly. Recent work on the advance, or recession, of contact lines will also be described briefly, and significant questions that still remain to be answered will be discussed. 68 refs., 7 figs

  19. Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

    Science.gov (United States)

    Al-Daraghmeh, Tariq M.; Saleh, Mahmoud H.; Ahmad, Mais Jamil A.; Bulos, Basim N.; Shehadeh, Khawla M.; Jafar, Mousa M. Abdul-Gader

    2018-03-01

    The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures T_{{s}} = 150 °C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal-semiconductor-metal (MSM-) structures. The as-measured constant- temperature direct-current (dc)-voltage ( I( {V;T} ) - V ) curves of the obtained lateral coplanar Cu-PbI2-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures ( T = 18 - 90°C). Their dc electrical resistance R_{{dc}} (T ) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy E_{{act}} ≈ 0.90 - 0.98 {eV} , slightly less than half of room-temperature bandgap energy E_{{g}} ( ≈ 2.3 {eV} ) of undoped 2H-polytype PbI2 single crystals. The undoped flash-evaporated {PbI}_{{x}} thin films were homogeneous and almost stoichiometric ( x ≈ 1.87 ), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at T_{s} ≳ 150°C. Photoconductivity measurements made on these lateral Cu-PbI2-Cu-structures under on-off visible-light illumination reveal a feeble photoresponse for long wavelengths ( λ > 570 {nm} ), but a strong response to blue light of photon energy E_{{ph}} ≈ 2.73 {eV} ( > E_{{g}} ), due to photogenerated electron-hole (e-h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current-time I( {T,V} ) - t curves of the studied lateral PbI2 MSM-structures at low ambient temperatures ( T < 50°C), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on V and T , with thermally generated charge carriers in the PbI2 mask photogenerated

  20. Property elucidation of vacuum-evaporated zinc telluride thin film ...

    Indian Academy of Sciences (India)

    J U Ahamed

    2017-08-31

    Aug 31, 2017 ... method for the deposition of ZnTe thin film as compared to other methods. ... the advantages and disadvantages of different deposition process, it was ... by a spiral resistance heater and the temperature was measured by a ...

  1. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    Thomas, G.E.

    1988-01-01

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  2. Synthesis and characterization of Cu–Al–Ni shape memory alloy multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gómez-Cortés, J.F. [Dpt. Física Materia Condensada, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain); San Juan, J., E-mail: jose.sanjuan@ehu.es [Dpt. Física Materia Condensada, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain); López, G.A.; Nó, M.L. [Dpt. Física Aplicada II, Facultad de Ciencia y Tecnología, Universidad del País Vasco, Apdo. 644, 48080 Bilbao (Spain)

    2013-10-01

    Among active materials, shape memory alloys are well recognized for their work output density. Because of that, these alloys have attracted much attention to be used in micro/nano electromechanical systems. In the present work, the electron beam evaporation technique has been used to growth, by a multilayer method, two shape memory alloy thin films with different Cu–Al–Ni composition. Multilayers have been further thermally treated to produce the alloys by solid solution diffusion. The produced multilayers have been characterized and the presence of the martensite phase in the obtained thin films was studied. Furthermore, the influence of two different coatings onto the Si substrates, namely Si/SiO{sub 2} and Si/Si{sub 3}N{sub 4}, was investigated. Mechanically stable, not detaching from the substrates, Cu–Al–Ni shape memory alloy thin films, about 1 micrometre thick, showing a martensitic transformation have been produced. - Highlights: ► Multilayer thin films of Cu–Al–Ni shape memory alloys produced by e-beam evaporation. ► SiN{sub X} 200 nm thick coating is good for high quality Cu–Al–Ni shape memory thin films. ► Thermal treatment renders Cu–Al–Ni multilayer in homogeneous martensite thin film.

  3. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  4. Reactive Coevaporation Synthesis and Characterization of SrTiO3 Thin Films

    Science.gov (United States)

    Yamaguchi, Hiromu; Matsubara, Shogo; Miyasaka, Yoichi

    1991-09-01

    SrTiO3 thin films were prepared by the reactive coevaporation method, where the Ti and Sr metals were evaporated in oxygen ambient with an E-gun and K-cell, respectively. A uniform depth profile in composition was achieved by altering the Ti evaporation rate according to the Sr evaporation rate change. A typical dielectric constant of 170 was measured on films of 75 nm in thickness. The in-situ annealing in oxygen plasma reduced the leakage current.

  5. Investigation on thermal evaporated CH3NH3PbI3 thin films

    Directory of Open Access Journals (Sweden)

    Youzhen Li

    2015-09-01

    Full Text Available CH3NH3I, PbI2 and CH3NH3PbI3 films were fabricated by evaporation and characterized with X-ray Photoelectron Spectroscopy (XPS and X-ray diffraction (XRD. The XPS results indicate that the PbI2 and CH3NH3PbI3 films are more uniform and stable than the CH3NH3I film. The atomic ratio of the CH3NH3I, PbI2 and CH3NH3PbI3 films are C:N:I=1.00:1.01:0.70, Pb:I= 1.00:1.91 and C: N: Pb: I = 1.29:1.07:1.00:2.94, respectively. The atomic ratio of CH3NH3PbI3 is very close to that of the ideal perovskite. Small angle x-ray diffraction results demonstrate that the as evaporated CH3NH3PbI3 film is crystalline. The valence band maximum (VBM and work function (WF of the CH3NH3PbI3 film are about 0.85eV and 4.86eV, respectively.

  6. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  7. Evaporation characteristics of thin film liquid argon in nano-scale confinement: A molecular dynamics study

    Science.gov (United States)

    Hasan, Mohammad Nasim; Shavik, Sheikh Mohammad; Rabbi, Kazi Fazle; Haque, Mominul

    2016-07-01

    Molecular dynamics simulation has been carried out to explore the evaporation characteristics of thin liquid argon film in nano-scale confinement. The present study has been conducted to realize the nano-scale physics of simultaneous evaporation and condensation inside a confined space for a three phase system with particular emphasis on the effect of surface wetting conditions. The simulation domain consisted of two parallel platinum plates; one at the top and another at the bottom. The fluid comprised of liquid argon film at the bottom plate and vapor argon in between liquid argon and upper plate of the domain. Considering hydrophilic and hydrophobic nature of top and bottom surfaces, two different cases have been investigated: (i) Case A: Both top and bottom surfaces are hydrophilic, (ii) Case B: both top and bottom surfaces are hydrophobic. For all cases, equilibrium molecular dynamics (EMD) was performed to reach equilibrium state at 90 K. Then the lower wall was set to four different temperatures such as 110 K, 120 K, 130 K and 140 K to perform non-equilibrium molecular dynamics (NEMD). The variation of temperature and density as well as the variation of system pressure with respect to time were closely monitored for each case. The heat fluxes normal to top and bottom walls were estimated and discussed to illuminate the effectiveness of heat transfer in both hydrophilic and hydrophobic confinement at various boundary temperatures of the bottom plate.

  8. [Preparation and spectral characterization of CdS(y)Te(1-y) thin films].

    Science.gov (United States)

    Li, Wei; Feng, Liang-Huan; Wu, Li-Li; Zhang, Jing-Quan; Li, Bing; Lei, Zhi; Cai, Ya-Ping; Zheng, Jia-Gui; Cai, Wei; Zhang, Dong-Min

    2008-03-01

    CdS(y)Te(1-y) (0 co-evaporation of powders of CdTe and CdS. For the characterization of the structure and composition of the CdS(y)Te(1-y) thin films the X-ray diffraction (XRD) and energy-dispersive spectroscopy (EDS) were used. The results indicate that the values of sulfur content y detected and controlled by the quartz wafer detector show good agreement with the EDS results. The films were found to be cubic for x or = 0.3. The 20-50 nm of grain sizes for CdS(y)Te(1-y) thin films were calculated using a method of XRD analysis. Finally, the optical properties of CdS(y)Te(1-y) thin films were characterized by UV-Vis-NIR spectroscopy alone. According to a method from Swanepoel, together with the first-order Sellmeier model, the thickness, of d-535 nm, energy gap of E(g)-1.41 eV, absorption coefficient, alpha(lambda) and refractive index, n(lambda) of CdS(0.22) Te(0.78) thin films were determined from the transmittance at normal incidence of light in the wavelength range 300-2 500 nm. The results also indicate that the CdS(y)Te(1-y) thin films with any composition (0 co-evaporation, and the method to characterize the optical properties of CdS(y)Te(1-y) thin films can be implemented for other semiconductor thin films.

  9. The Structural Changes of the Sn(y)OX Thin Films Under Influence of Heat Treament

    Science.gov (United States)

    Vong, V.

    2001-04-01

    Composite oxide Sn(y) Ox made by thermal oxidation of the Sn(y)-bimetal thin films, in which y is the doped-materials as well as Sb, Ag or Pd. The Sn(y)-bimetal thin films have been made by evaporation in high vacuum onto NaCl-monocrystall and optical glass substrates. In the work the tin and the doped material (y) were put on two different boats and then both the boats were simultaniously heated to evaporate. The Sn(y)Ox thin films were annealed at the differential temperatures. The structural changes of its have been investigated by using X-ray diffraction and transmission electron microscope.

  10. Physical properties and characterization of Ag doped CdS thin films

    International Nuclear Information System (INIS)

    Shah, N.A.; Nazir, A.; Mahmood, W.; Syed, W.A.A.; Butt, S.; Ali, Z.; Maqsood, A.

    2012-01-01

    Highlights: ► CdS thin films were grown. ► By ion exchange, Ag was doped. ► Physical properties were investigated. - Abstract: Thin films of cadmium sulfide with very well defined preferential orientation and relatively high absorption coefficient were fabricated by thermal evaporation technique. The research is focused to the fabrication and characterization of the compositional data of CdS thin films obtained by using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray spectroscopy. The optical properties were studied by using a UV-VIS-NIR spectrophotometer. The effects of silver-doping by ion exchange process on the properties of as-deposited CdS thin films have been investigated.

  11. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    International Nuclear Information System (INIS)

    Gayathri, A.G.; Joseph, C.M.

    2016-01-01

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  12. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

    2016-09-15

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  13. Oxidation behavior of arc evaporated Al-Cr-Si-N thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tritremmel, Christian; Daniel, Rostislav; Mitterer, Christian; Mayrhofer, Paul H.; Lechthaler, Markus; Polcik, Peter [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); Christian Doppler Laboratory for Application Oriented Coating Development, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); OC Oerlikon Balzers AG, Iramali 18, LI-9496 Balzers (Liechtenstein); PLANSEE Composite Materials GmbH, Siebenbuergerstrasse 23, D-86983 Lechbruck am See (Germany)

    2012-11-15

    The impact of Al and Si on the oxidation behavior of Al-Cr-(Si)-N thin films synthesized by arc evaporation of powder metallurgically prepared Al{sub x}Cr{sub 1-x} targets with x = Al/(Al + Cr) of 0.5, 0.6, and 0.7 and (Al{sub 0.5}Cr{sub 0.5}){sub 1-z}Si{sub z} targets with Si contents of z = 0.05, 0.1, and 0.2 in N{sub 2} atmosphere was studied in detail by means of differential scanning calorimetry, thermogravimetric analysis (TGA), x-ray diffraction, and Raman spectroscopy. Dynamical measurements in synthetic air (up to 1440 Degree-Sign C) revealed the highest onset temperature of pronounced oxidation for nitride coatings prepared from the Al{sub 0.4}Cr{sub 0.4}Si{sub 0.2} target. Isothermal TGA at 1100, 1200, 1250, and 1300 Degree-Sign C highlight the pronounced improvement of the oxidation resistance of Al{sub x}Cr{sub 1-x}N coatings by the addition of Si. The results show that Si promotes the formation of a dense coating morphology as well as a dense oxide scale when exposed to air.

  14. Optoelectronic properties of cadmium sulfide thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Ali, N.; Iqbal, M.A.; Hussain, S.T.; Waris, M.; Munair, S.A.

    2011-01-01

    The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150 deg. C- 300 deg. C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300 nm to 1100 nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm/sup 2/V/sup -1/S/sup -1/ respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the N-type nature of the film. (author)

  15. Production of active lysozyme films by matrix assisted pulsed laser evaporation at 355 nm

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Kingshott, P.

    2007-01-01

    Thin lysozyme films have been produced in a dry environment by MAPLE (matrix assisted pulsed laser evaporation) from a water ice matrix irradiated by laser light at 355 nm above the absorption threshold of the protein. A significant part of the lysozyme molecules are transferred to the film without...

  16. Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

    KAUST Repository

    Yang, Xiaoming

    2014-12-12

    Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

  17. Analysis of thin films prepared by vacuum-evaporation and dropping solution by Takeoff Angle-Dependent X-Ray Fluorescence spectroscopy at glancing incidence

    International Nuclear Information System (INIS)

    Tsuji, Kouichi; Hirokawa, Kichinosuke; Mitose, Kengo.

    1995-01-01

    We have introduced Takeoff Angle-Dependent X-Ray Fluorescence (TAD-XRF) method for thin film and surface analysis. In this method, the sample on the optically flat substrate is irradiated with the glancing incidence of the primary X-ray, and the fluorescent X-rays emitted from the sample are detected at the glancing takeoff angle. We had previously calculated the relationship between the fluorescent X-ray intensity and the takeoff angle at the glancing incidence. The characterization of the thin film is achieved by investigating the dependence of the fluorescent X-ray intensity on the takeoff angle with the calculated curve. Using this analytical method, we have reported the results of the TAD-XRF measured for the evaporated thin films and the dried films from dropping solution in this paper. The effect of the thickness of the thin film, the density of the substrate and the incident angle on the TAD-XRF curve has been reported. In the case of the dried film from the dropping solution, a broad peak was observed at the takeoff angle which was close to the critical angle for the total reflection of the fluorescent X-ray in the TAD-XRF curve. This broad peak was explained by the double-excitation of the incident beam and the refracted beam of the fluorescent X-ray with the assumption that the X-ray which has a same wavelength to the observed fluorescent X-ray impinges upon the sample surface, because the reciprocity theorem is expected in the X-ray region. (author)

  18. Pilot-Scale Test Results Of A Thin Film Evaporator System For Management Of Liquid High-Level Wastes At The Hanford Site Washington USA -11364

    International Nuclear Information System (INIS)

    Corbett, J.E.; Tedesch, A.R.; Wilson, R.A.; Beck, T.H.; Larkin, J.

    2011-01-01

    A modular, transportable evaporator system, using thin film evaporative technology, is planned for deployment at the Hanford radioactive waste storage tank complex. This technology, herein referred to as a wiped film evaporator (WFE), will be located at grade level above an underground storage tank to receive pumped liquids, concentrate the liquid stream from 1.1 specific gravity to approximately 1.4 and then return the concentrated solution back into the tank. Water is removed by evaporation at an internal heated drum surface exposed to high vacuum. The condensed water stream will be shipped to the site effluent treatment facility for final disposal. This operation provides significant risk mitigation to failure of the aging 242-A Evaporator facility; the only operating evaporative system at Hanford maximizing waste storage. This technology is being implemented through a development and deployment project by the tank farm operating contractor, Washington River Protection Solutions (WRPS), for the Office of River Protection/Department of Energy (ORPIDOE), through Columbia Energy and Environmental Services, Inc. (Columbia Energy). The project will finalize technology maturity and install a system at one of the double-shell tank farms. This paper summarizes results of a pilot-scale test program conducted during calendar year 2010 as part of the ongoing technology maturation development scope for the WFE.

  19. PILOT-SCALE TEST RESULTS OF A THIN FILM EVAPORATOR SYSTEM FOR MANAGEMENT OF LIQUID HIGH-LEVEL WASTES AT THE HANFORD SITE WASHINGTON USA -11364

    Energy Technology Data Exchange (ETDEWEB)

    CORBETT JE; TEDESCH AR; WILSON RA; BECK TH; LARKIN J

    2011-02-14

    A modular, transportable evaporator system, using thin film evaporative technology, is planned for deployment at the Hanford radioactive waste storage tank complex. This technology, herein referred to as a wiped film evaporator (WFE), will be located at grade level above an underground storage tank to receive pumped liquids, concentrate the liquid stream from 1.1 specific gravity to approximately 1.4 and then return the concentrated solution back into the tank. Water is removed by evaporation at an internal heated drum surface exposed to high vacuum. The condensed water stream will be shipped to the site effluent treatment facility for final disposal. This operation provides significant risk mitigation to failure of the aging 242-A Evaporator facility; the only operating evaporative system at Hanford maximizing waste storage. This technology is being implemented through a development and deployment project by the tank farm operating contractor, Washington River Protection Solutions (WRPS), for the Office of River Protection/Department of Energy (ORPIDOE), through Columbia Energy and Environmental Services, Inc. (Columbia Energy). The project will finalize technology maturity and install a system at one of the double-shell tank farms. This paper summarizes results of a pilot-scale test program conducted during calendar year 2010 as part of the ongoing technology maturation development scope for the WFE.

  20. Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

    Science.gov (United States)

    Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

    2017-10-01

    Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

  1. Evaporation of Particle-Stabilized Emulsion Sunscreen Films.

    Science.gov (United States)

    Binks, Bernard P; Fletcher, Paul D I; Johnson, Andrew J; Marinopoulos, Ioannis; Crowther, Jonathan M; Thompson, Michael A

    2016-08-24

    We recently showed (Binks et al., ACS Appl. Mater. Interfaces, 2016, DOI: 10.1021/acsami.6b02696) how evaporation of sunscreen films consisting of solutions of molecular UV filters leads to loss of UV light absorption and derived sun protection factor (SPF). In the present work, we investigate evaporation-induced effects for sunscreen films consisting of particle-stabilized emulsions containing a dissolved UV filter. The emulsions contained either droplets of propylene glycol (PG) in squalane (SQ), droplets of SQ in PG or droplets of decane in PG. In these different emulsion types, the SQ is involatile and shows no evaporation, the PG is volatile and evaporates relatively slowly, whereas the decane is relatively very volatile and evaporates quickly. We have measured the film mass and area, optical micrographs of the film structure, and the UV absorbance spectra during evaporation. For emulsion films containing the involatile SQ, evaporation of the PG causes collapse of the emulsion structure with some loss of specular UV absorbance due to light scattering. However, for these emulsions with droplets much larger than the wavelength of light, the light is scattered only at small forward angles so does not contribute to the diffuse absorbance and the film SPF. The UV filter remains soluble throughout the evaporation and thus the UV absorption by the filter and the SPF remain approximately constant. Both PG-in-SQ and SQ-in-PG films behave similarly and do not show area shrinkage by dewetting. In contrast, the decane-in-PG film shows rapid evaporative loss of the decane, followed by slower loss of the PG resulting in precipitation of the UV filter and film area shrinkage by dewetting which cause the UV absorbance and derived SPF to decrease. Measured UV spectra during evaporation are in reasonable agreement with spectra calculated using models discussed here.

  2. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Dudney, Nancy J.

    2008-01-01

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  3. Molecular dynamics simulations of disjoining pressure effects in ultra-thin water films on a metal surface

    Science.gov (United States)

    Hu, Han; Sun, Ying

    2013-11-01

    Disjoining pressure, the excess pressure in an ultra-thin liquid film as a result of van der Waals interactions, is important in lubrication, wetting, flow boiling, and thin film evaporation. The classic theory of disjoining pressure is developed for simple monoatomic liquids. However, real world applications often utilize water, a polar liquid, for which fundamental understanding of disjoining pressure is lacking. In the present study, molecular dynamics (MD) simulations are used to gain insights into the effect of disjoining pressure in a water thin film. Our MD models were firstly validated against Derjaguin's experiments on gold-gold interactions across a water film and then verified against disjoining pressure in an argon thin film using the Lennard-Jones potential. Next, a water thin film adsorbed on a gold surface was simulated to examine the change of vapor pressure with film thickness. The results agree well with the classic theory of disjoining pressure, which implies that the polar nature of water molecules does not play an important role. Finally, the effects of disjoining pressure on thin film evaporation in nanoporous membrane and on bubble nucleation are discussed.

  4. Simultaneous reflectometry and interferometry for measuring thin-film thickness and curvature

    Science.gov (United States)

    Arends, A. A.; Germain, T. M.; Owens, J. F.; Putnam, S. A.

    2018-05-01

    A coupled reflectometer-interferometer apparatus is described for thin-film thickness and curvature characterization in the three-phase contact line region of evaporating fluids. Validation reflectometry studies are provided for Au, Ge, and Si substrates and thin-film coatings of SiO2 and hydrogel/Ti/SiO2. For interferometry, liquid/air and solid/air interferences are studied, where the solid/air samples consisted of glass/air/glass wedges, cylindrical lenses, and molded polydimethylsiloxane lenses. The liquid/air studies are based on steady-state evaporation experiments of water and isooctane on Si and SiO2/Ti/SiO2 wafers. The liquid thin-films facilitate characterization of both (i) the nano-scale thickness of the absorbed fluid layer and (ii) the macro-scale liquid meniscus thickness, curvature, and curvature gradient profiles. For our validation studies with commercial lenses, the apparatus is shown to measure thickness profiles within 4.1%-10.8% error.

  5. A study of the optical properties and adhesion of zinc sulfide anti-reflection thin film coated on a germanium substrate

    Energy Technology Data Exchange (ETDEWEB)

    Firoozifar, S.A.R. [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of); Behjat, A., E-mail: abehjat@yazduni.ac.ir [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of); Photonics Research Group, Engineering Research Center, Yazd University, Yazd (Iran, Islamic Republic of); Kadivar, E. [Physics Department, Persian Gulf University, Bushehr (Iran, Islamic Republic of); Ghorashi, S.M.B.; Zarandi, M. Borhani [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of)

    2011-11-01

    To conduct this study, zinc sulfide (ZnS) thin films deposited on germanium (Ge) substrates were prepared by an evaporation method. The effects of deposition rate and annealing on the optical properties and adhesion of the ZnS thin films were investigated. The transmission intensity and the X-ray diffraction (XRD) pattern of the samples showed that the transmittance of the samples decreases by increasing the evaporation rates. However, with the increase of the annealing temperature, crystallinity of the thin films improves which, in turn, results in the enhancement of the transmission intensity in a far infrared region. The maximum grain size was obtained at the annealing temperature of 225 deg. C. Our experimental results also show that evaporation rate and annealing influences the adhesion of ZnS thin films to Ge substrates.

  6. Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films.

    Science.gov (United States)

    Lee, Stephanie S; Mativetsky, Jeffrey M; Loth, Marsha A; Anthony, John E; Loo, Yueh-Lin

    2012-11-27

    The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.

  7. Synthesis and characterisation of Cu{sub 2}ZnSnSe{sub 4} thin films prepared via a vacuum evaporation-based route

    Energy Technology Data Exchange (ETDEWEB)

    Volobujeva, O., E-mail: v.olga@staff.ttu.ee; Bereznev, S.; Raudoja, J.; Otto, K.; Pilvet, M.; Mellikov, E.

    2013-05-01

    Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu{sub 2}ZnSnSe{sub 4} films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu{sub 2}ZnSnSe{sub 4} thin films was studied. Our results indicate the possibility of replacing the Se{sub 2} selenisation with a thermal treatment in an SnSe{sub 2} atmosphere to avoid the selenisation of the Mo substrate and MoSe{sub 2} formation. This SnSe{sub 2} treatment forms p-type Cu{sub 2}ZnSnSe{sub 4} films with an optical band-gap of 1.14 eV and a solar cell structure with an efficiency of up to 3%. - Highlights: ► Cu{sub 2}ZnSnSe{sub 4} thin films were grown using binary precursors and selenisation. ► Composition and morphology were studied in dependence of selenisation atmosphere. ► The use of SnSe{sub 2} selenisation allows to avoid Mo substrate selenisation. ► The high quality of films is indicated by the value of their E{sub g} = 1.14 eV. ► Cu{sub 2}ZnSnSe{sub 4} thin films were in p-type conductivity and were realized as solar cells.

  8. Morphological analysis of co-evaporated blend films based on initial growth for organic photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Shibata, Yosei, E-mail: yosei.shibata@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Taima, Tetsuya [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Zhou, Ying; Ohashi, Noboru; Kono, Takahiro [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Yoshida, Yuji, E-mail: yuji.yoshida@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2015-11-15

    Graphical abstract: - Highlights: • Initial growth mode of co-evaporated films was observed. • Balanced crystal growth leads to improvement of photovoltaic performance. • Crystal growth of fullerene during co-evaporation process was restricted. • The power conversion efficiency of 3% was obtained without electron blocking layer. - Abstract: Bulk heterojunction structures composed of electron donor and acceptor molecules for application in high-performance organic photovoltaics studied. To fabricate these structures, the co-evaporation method in vacuum is commonly applied; however, the details of the crystal growth process during co-evaporation have not yet been established. Here, we focused on structural analysis of blend films composed of phthalocyanine and fullerene based on initial growth stage. Similar crystal growth behavior to that typically observed in single-component molecules is obtained for the films. These results suggest that the competitive crystal growth between donors and acceptors occurs during co-evaporation process. The balance of thin film growth among donor and acceptor molecules can be related to improved photovoltaic performance. The homogeneous blend structure leads to improvement of the power conversion efficiency from 1.2% to 3.0%.

  9. Effect of the RE (RE = Eu, Er) doping on the structural and textural properties of mesoporous TiO{sub 2} thin films obtained by evaporation induced self-assembly method

    Energy Technology Data Exchange (ETDEWEB)

    Borlaf, Mario, E-mail: mborlaf@icv.csic.es [Instituto de Cerámica y Vidrio, CSIC, C/Kelsen, 5, Cantoblanco, E-28049 Madrid (Spain); Caes, Sebastien; Dewalque, Jennifer [LCIS-GREENMAT, Institute of Chemistry, University of Liege, B6 Sart Tilman, 4000 Liege (Belgium); Colomer, María Teresa; Moreno, Rodrigo [Instituto de Cerámica y Vidrio, CSIC, C/Kelsen, 5, Cantoblanco, E-28049 Madrid (Spain); Cloots, Rudi; Boschini, Frederic [LCIS-GREENMAT, Institute of Chemistry, University of Liege, B6 Sart Tilman, 4000 Liege (Belgium); APTIS, Institute of Physics, University of Liege, B5 Sart Tilman, 4000 Liege (Belgium)

    2014-05-02

    Polymeric sol–gel route has been used for the preparation of TiO{sub 2} and RE{sub 2}O{sub 3–}TiO{sub 2} (RE = Eu, Er) mesoporous thin films by evaporation induced self-assembly method using Si (100) as a substrate. The influence of the relative humidity (RH) on the preparation of the film has been studied being necessary to work under 40% RH in order to obtain homogeneous and transparent thin films. The films were annealed at different temperatures until 900 °C/1 h and the anatase crystallization and its crystal size evolution were followed by low angle X-ray diffraction. Neither the anatase–rutile transition nor the formation of other compounds was observed in the studied temperature range. Ellipsoporosimetry studies demonstrated that the thickness of the thin films did not change after calcination at 500 °C, the porosity was constant until 700 °C, the pore size increased and the specific surface area decreased with temperature. Moreover, the effect of the doping with Er{sup 3+} and Eu{sup 3+} was studied and a clear inhibition of the crystal growth and the sintering process was detected (by transmission electron and atomic force microscopy) when the doped films are compared with the undoped ones. Finally, Eu{sup 3+} and Er{sup 3+} f–f transitions were detected by PL measurements. - Highlights: • Eu and Er–TiO{sub 2} mesoporous films were prepared by evaporation induced self-assembly. • Influence of humidity on porosity and photoluminescent properties has been tested. • Influence of calcination on structural and textural properties has been also studied. • f–f transitions indicate that the thin films are active photoluminescent materials.

  10. Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    H. Abdullah

    2013-01-01

    Full Text Available CuInSe2 (CIS thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD for crystallinity and field-emission scanning electron microscopy (FESEM for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2 films with (1 1 1, (2 2 0/(2 0 4, and (3 1 2/(1 1 6 planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2 formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2 solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

  11. Structural and optical properties of ITO and Cu doped ITO thin films

    Science.gov (United States)

    Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

    2018-04-01

    (In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

  12. Synthesis, characterization, and photoactivity of InTaO4 and In0.9Ni0.1TaO4 thin films prepared by electron evaporation

    International Nuclear Information System (INIS)

    Rico, V. J.; Frutos, F.; Yubero, F.; Espinos, J. P.; Gonzales-Elipe, A. R.

    2010-01-01

    InTaO 4 and In 0.9 Ni 0.1 TaO 4 thin films have been prepared by electron evaporation of successive layers of the single oxide components and posterior annealing at T>800 deg. C. The annealed thin films presented the monoclinic crystallographic structure typical of these mixed oxides. The electrical and optical behaviors of the films, assessed by C-V measurements, surface conductivity as a function of temperature, and UV-vis absorption spectroscopy, indicate that these oxides are wide band gap semiconductors with a variable dielectric constant depending on the annealing conditions. By reflection electron energy loss spectroscopy some electronic states have been found in the gap at an energy that is compatible with the activation energy deduced from the conductivity versus 1/T plots for these oxides. The photoactivity of these materials has been assessed by looking to the evolution of the wetting contact angle as a function of the irradiation time. All the films became superhydrophilic when irradiated with UV light, while the In 0.9 Ni 0.1 TaO 4 thin films also presented a small partial decrease in wetting angle when irradiated with visible photons.

  13. Thin polymer films on chemically patterned, corrugated substrates

    International Nuclear Information System (INIS)

    Geoghegan, Mark; Wang Chun; Rehse, Nicolaus; Magerle, Robert; Krausch, Georg

    2005-01-01

    We study the effect of a chemical pattern on the wetting and dewetting behaviour of thin polystyrene (PS) films on regularly corrugated silicon substrates. Our results reveal that the film preparation, annealing method, and confinement play a critical role in the final film structure. On evaporating gold on both sides of the facets (such that it covered the crests of the facets, and not the troughs), we observed dewetting, which proceeded to the gold, demonstrating an enthalpic effect contrary to the outcome previously observed when gold was only evaporated on one side of the facet. We also coated the substrate with octadecyltrichlorosilane (OTS); this led to a gold and OTS striped structure. PS films several nanometres thick dewet such substrates, with a preferential direction for dewetting in the direction of the stripes forming droplets of a considerably larger size than the stripes

  14. Impact of additional sulphur on structure, morphology and optical properties of SnS thin films by thermal evaporation

    Science.gov (United States)

    Banotra, Arun; Padha, Naresh; Kumar, Shiv; Kapoor, Ashok K.

    2018-05-01

    Thin films of SnS have been obtained from Sn and S powders which were mixed up using ball mill technique with and without evaporating additional sulphur prior to annealing at 523K. The obtained samples were taken for structural, optical, chemical and morphological studies. The X-ray diffraction reveals the formation of SnS phase on annealing in vacuum having S/Sn ratio of 0.67 obtained from EDAX. This deficit in `S' is removed by supplementing additional `S' of 200nm prior to annealing which results in the S/Sn ratio of 1.01. The optical transmission recorded from spectrophotometer used to study different optical parameters. Morphological results corroborate well with the XRD, EDAX and optical study. The obtained stoichiometric films were also tested for Ag/p-SnS Schottky diodes on In coated glass substrates using current voltage measurements.

  15. An investigation of room temperature ''oxidized'' thin films of A1 for photovoltaic applications

    International Nuclear Information System (INIS)

    Adegboyega, G.A.

    1985-12-01

    Sheet resistance and transmittance changes of thin films of A1 evaporated in high vacuum were measured during sorption of oxygen at room atmosphere. An increase of both sheet resistance and transmittance with a tendency to saturation has been observed. Evaluation of various thicknesses of the films for possible use as transparent electrode material for photovoltaic applications shows that for very thin films ( = 200 A) the ''oxidized'' films are superior. (author)

  16. An investigation of the insertion of the cations H{sup +}, Na{sup +}, K{sup +} on the electrochromic properties of the thermally evaporated WO{sub 3} thin films grown at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Patel, K.J. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Panchal, C.J., E-mail: cjpanchal_msu@yahoo.com [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Desai, M.S. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Mehta, P.K. [Physics Department, Faculty of Science, M.S. University of Baroda, Vadodara 390002, Gujarat (India)

    2010-11-01

    The phenomenon of electrochromism in tungsten trioxide (WO{sub 3}) thin films has recently attained considerable interest due to their enormous applications in inorganic thin film electrochromic devices. We have investigated the compositional, optical, and electrochromic properties of the WO{sub 3} thin films grown at different substrate temperatures by the thermal evaporation of WO{sub 3} powder. The thin films were characterized using X-ray diffraction (XRD), X-ray photo-emission spectroscopy (XPS), and electrochemical techniques. The XPS analysis suggested that the oxygen to tungsten (O/W) ratio decreases, i.e., the oxygen deficiency increases, on increasing the substrate temperature up to 500 deg. C. The electrochemical analysis provided a comparative study of the coloration efficiency (CE) of the WO{sub 3} thin films intercalated with three different ions viz. H{sup +}, Na{sup +}, and K{sup +}. The effect of the variation of the substrate temperature on the CE and the switching time have also been investigated for the WO{sub 3} thin films intercalated with H{sup +} ions; the thin films deposited at RT and intercalated with H{sup +} ions are found to possess adequate electrochromic properties viz. CE and switching time from device point of view.

  17. Schottky contact analysis of photovoltaic chalcopyrite thin film absorbers

    International Nuclear Information System (INIS)

    Schlenker, E.; Mertens, V.; Parisi, J.; Reineke-Koch, R.; Koentges, M.

    2007-01-01

    Current-voltage and capacitance-voltage measurements serve to analyze thermally evaporated Al Schottky contacts on Cu(In, Ga)Se 2 based photovoltaic thin film devices, either taken as grown or etched in a bromine-methanol solution. The characteristics of the Schottky contacts on the as-grown films give evidence for some dielectric layer developing between the metal and the semiconductor. Etching the semiconductor surface prior to evaporation of the Al front contact yields a pure metal-semiconductor behavior, including effects that can be attributed to an additional diode at the Mo contact. Simulations confirm the experimental results

  18. Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties

    Science.gov (United States)

    Trinh, Cham Thi; Nakagawa, Yoshihiko; Hara, Kosuke O.; Kurokawa, Yasuyoshi; Takabe, Ryota; Suemasu, Takashi; Usami, Noritaka

    2017-05-01

    We have successfully grown a polycrystalline orthorhombic BaSi2 film on a Ge(100) substrate by an evaporation method. Deposition of an amorphous Si (a-Si) film on the Ge substrate prior to BaSi2 evaporation plays a critical role in obtaining a high-quality BaSi2 film. By controlling substrate temperature and the thickness of the a-Si film, a crack-free and single-phase polycrystalline orthorhombic BaSi2 film with a long carrier lifetime of 1.5 µs was obtained on Ge substrates. The photoresponse property of the ITO/BaSi2/Ge/Al structure was clearly observed, and photoresponsivity was found to increase with increasing substrate temperature during deposition of a-Si. Furthermore, the BaSi2 film grown on Ge showed a higher photoresponsivity than that grown on Si, indicating the potential application of evaporated BaSi2 on Ge to thin-film solar cells.

  19. Simple gun for vapor deposition of organic thin films

    International Nuclear Information System (INIS)

    Sato, N.; Seki, K.; Inokuchi, H.

    1987-01-01

    A simple evaporation gun for preparing organic thin films was fabricated using commercially available parts of an electron gun for a TV Braun tube. The device permits sample heating to be easily controlled because of the small heat capacity

  20. Tensile and fatigue behaviors of printed Ag thin films on flexible substrates

    International Nuclear Information System (INIS)

    Sim, Gi-Dong; Won, Sejeong; Lee, Soon-Bok

    2012-01-01

    Flexible electronics using nanoparticle (NP) printing has been highlighted as a key technology enabling eco-friendly, low-cost, and large-area fabrication. For NP-based printing to be used as a successive alternative to photolithography and vacuum deposition, stretchability and long term reliability must be considered. This paper reports the stretchability and fatigue behavior of 100 nm thick NP-based silver thin films printed on polyethylene-terephthalate substrate and compares it to films deposited by electron-beam evaporation. NP-based films show stretchability and fatigue life comparable to evaporated films with intergranular fracture as the dominant failure mechanism.

  1. Tensile and fatigue behaviors of printed Ag thin films on flexible substrates

    Science.gov (United States)

    Sim, Gi-Dong; Won, Sejeong; Lee, Soon-Bok

    2012-11-01

    Flexible electronics using nanoparticle (NP) printing has been highlighted as a key technology enabling eco-friendly, low-cost, and large-area fabrication. For NP-based printing to be used as a successive alternative to photolithography and vacuum deposition, stretchability and long term reliability must be considered. This paper reports the stretchability and fatigue behavior of 100 nm thick NP-based silver thin films printed on polyethylene-terephthalate substrate and compares it to films deposited by electron-beam evaporation. NP-based films show stretchability and fatigue life comparable to evaporated films with intergranular fracture as the dominant failure mechanism.

  2. Memory and threshold switching in thin film PMMA polymer

    International Nuclear Information System (INIS)

    Rabah, K.V.O.

    1995-05-01

    Threshold switching between two impedance states have been observed at room temperature in a polymethylmethacrylate (PMMA) thin film sandwiched between two evaporated Al-metal electrodes. The cell's I-V characteristics were found to exhibit memory property. (author). 19 refs, 4 figs

  3. Mechanism of spontaneous hole formation in thin polymeric films

    DEFF Research Database (Denmark)

    Yu, Kaijia; Rasmussen, Henrik K.; Román Marín, José Manuel

    2012-01-01

    We show computationally that (molten) thin polymeric film containing nonequilibrium configurations originating from a solvent evaporation may develop holes spontaneously in the molten state, and that they appear delayed. Polymers above the glass transition temperature are liquids where the flow...

  4. Deposition of matrix-free fullerene films with improved morphology by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    2013-01-01

    Thin films of C60 were deposited by matrix-assisted pulsed laser evaporation (MAPLE) from a frozen target of anisole with 0.67 wt% C60. Above a fluence of 1.5 J/cm2 the C60 films are strongly non-uniform and are resulting from transfer of matrix-droplets containing fullerenes. At low fluence...... the fullerene molecules in the films are intact, the surface morphology is substantially improved and there are no measurable traces of the matrix molecules in the film. This may indicate a regime of dominant evaporation at low fluence which merges into the MAPLE regime of liquid ejection of the host matrix...

  5. Growth of high quality large area MgB2 thin films by reactive evaporation

    OpenAIRE

    Moeckly, Brian H.; Ruby, Ward S.

    2006-01-01

    We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

  6. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

    International Nuclear Information System (INIS)

    Mohanty, P.; Kabiraj, D.; Mandal, R.K.; Kulriya, P.K.; Sinha, A.S.K.; Rath, Chandana

    2014-01-01

    TiO 2 thin films deposited by electron beam evaporation technique annealed in either O 2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O 2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O 2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O 2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O 2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O 2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO 2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO 2 films were deposited by e-beam evaporation technique and post annealed under O 2 /Ar at 500 °C. • The pristine film shows SPM behavior where as O 2 and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O 2 annealed film than the Ar annealed one. • The higher M s in O 2 annealed film is attributed to oxygen vacancies as well as crystallinity

  7. Simulation of transformations of thin metal films heated by nanosecond laser pulses

    Science.gov (United States)

    Balandin, V. Yu.; Niedrig, R.; Bostanjoglo, O.

    1995-01-01

    The ablation of free-standing thin aluminum films by a nanosecond laser pulse was investigated by time-resolved transmission electron microscopy and numerical simulation. It was established that thin film geometry is particularly suited to furnish information on the mechanism of evaporation and the surface tension of the melt. In the case of aluminum the surface tension sigma as function of temperature can be approximated by two linear sections with a coefficient -0.3 x 10(exp -3) N/K m from the melting point 933 K up to 3000 K and -0.02 x 10(exp -3) N/K m above 3000 K, respectively, with sigma(993 K) = 0.9 N/m and sigma(8500 K) = 0. At lower pulse energies the films disintegrated predominantly by thermocapillary flow. Higher pulse energies produced volume evaporation, and a nonmonotonous flow, explained by recoil from evaporating atoms and thermocapillarity. The familiar equations of energy and motion, which presuppose separate and coherent vapor and liquid phases, were not adequate to describe the ablation of the hottest zone. Surface evaporation seemed to be marginal at all laser pulse energies used.

  8. Antimicrobial activity of biopolymer–antibiotic thin films fabricated by advanced pulsed laser methods

    Energy Technology Data Exchange (ETDEWEB)

    Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, C.; Dorcioman, G.; Miroiu, F.M.; Socol, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Gittard, S.D.; Miller, P.R.; Narayan, R.J. [Biomedical Engineering, University of North Carolina and North Carolina State University, Chapel Hill, NC 27599-7575 (United States); Enculescu, M. [National Institute for Materials Physics, PO Box MG-7, Bucharest-Magurele (Romania); Chrisey, D.B. [Tulane University, Department of Physics and Engineering Physics, New Orleans, LA (United States)

    2013-08-01

    We report on thin film deposition by matrix assisted pulsed laser evaporation (MAPLE) of two polymer–drug composite thin film systems. A pulsed KrF* excimer laser source (λ = 248 nm, τ = 25 ns, ν = 10 Hz) was used to deposit composite thin films of poly(D,L-lactide) (PDLLA) containing several gentamicin concentrations. FTIR spectroscopy was used to demonstrate that MAPLE-transferred materials exhibited chemical structures similar to those of drop cast materials. Scanning electron microscopy data indicated that MAPLE may be used to fabricate thin films of good morphological quality. The activity of PDLLA–gentamicin composite thin films against Staphylococcus aureus bacteria was demonstrated using drop testing. The influence of drug concentration on microbial viability was also assessed. Our studies indicate that polymer–drug composite thin films prepared by MAPLE may be used to impart antimicrobial activity to implants, medical devices, and other contact surfaces.

  9. Mathematical modeling of wiped-film evaporators

    International Nuclear Information System (INIS)

    Sommerfeld, J.T.

    1976-05-01

    A mathematical model and associated computer program were developed to simulate the steady-state operation of wiped-film evaporators for the concentration of typical waste solutions produced at the Savannah River Plant. In this model, which treats either a horizontal or a vertical wiped-film evaporator as a plug-flow device with no backmixing, three fundamental phenomena are described: sensible heating of the waste solution, vaporization of water, and crystallization of solids from solution. Physical property data were coded into the computer program, which performs the calculations of this model. Physical properties of typical waste solutions and of the heating steam, generally as analytical functions of temperature, were obtained from published data or derived by regression analysis of tabulated or graphical data. Preliminary results from tests of the Savannah River Laboratory semiworks wiped-film evaporators were used to select a correlation for the inside film heat transfer coefficient. This model should be a useful aid in the specification, operation, and control of the full-scale wiped-film evaporators proposed for application under plant conditions. In particular, it should be of value in the development and analysis of feed-forward control schemes for the plant units. Also, this model can be readily adapted, with only minor changes, to simulate the operation of wiped-film evaporators for other conceivable applications, such as the concentration of acid wastes

  10. Growth, Properties and Applications of Mo Ox Thin-Films Deposited by Reactive Sputtering

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis

    properties of metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties, and thus also their integration in novel optoelectronic devices. In this work, MoOx thin-films with various different phases and compositions were prepared by direct-current reactive...... molecules DBP and C70 are also covered in this work. The devices show interesting characteristics for very thin layers of the as-deposited MoOx films, displaying similar device efficiencies as those of in situ prepared MoOx thin-films formed from thermal evaporation. For the annealed MoOx films......Transition metal-oxide (TMOs) thin-films are commonly used in optoelectronic devices such as in photovoltaics and light emitting diodes, using both organic, inorganic and hybrid technologies. In such devices, TMOs typically act as an interfacial layer, where its functionality is to facilitate hole...

  11. Electrical properties of thermally evaporated nickel-dimethylglyoxime thin films

    Science.gov (United States)

    Dakhel, A. A.; Ali-Mohamed Ahmed, Y.

    2005-06-01

    Thin Bis-(dimethylglyoximato)nickel(II) [Ni(DMG)2] films of amorphous and crystalline structures were prepared by vacuum deposition on Si (P) substrates. The films were characterised by X-ray fluorescence and X-ray diffraction. The constructed Al/Ni(DMG)2/Si(P) metal-insulator-semiconductor devices were characterised by the measurement of the gate-voltage dependence of their capacitance and ac conductance, from which the surface states density Dit of insulator/semiconductor interface and the density of the fixed charges in the oxide were determined. The ac electrical conduction and dielectric properties of the Ni(DMG)2-Silicon structure were studied at room temperature. The data of the ac measurements of the annealed films follow the correlated barrier-hopping CBH mode, from which the fundamental absorption bandgap, the minimum hopping distance, and other parameters of the model were determined.

  12. Optical properties of YbF3-CaF2 composite thin films deposited by electron-beam evaporation

    Science.gov (United States)

    Wang, Songlin; Mi, Gaoyuan; Zhang, Jianfu; Yang, Chongmin

    2018-03-01

    We studied electron-beam evaporated YbF3-CaF2 composite films on ZnS substrate at different deposition parameters. The optical properties of films have been fitted, the surface roughness have been measured by AFM. The results of experiments indicated that increased the refractive indices, extinction coefficients, and surface roughness at higher deposition rate. The refractive index of composite film deposited by electron-beam evaporation with assisted-ion source was obviously higher than it without assisted-ion source.

  13. Evaporative lithographic patterning of binary colloidal films.

    Science.gov (United States)

    Harris, Daniel J; Conrad, Jacinta C; Lewis, Jennifer A

    2009-12-28

    Evaporative lithography offers a promising new route for patterning a broad array of soft materials. In this approach, a mask is placed above a drying film to create regions of free and hindered evaporation, which drive fluid convection and entrained particles to regions of highest evaporative flux. We show that binary colloidal films exhibit remarkable pattern formation when subjected to a periodic evaporative landscape during drying.

  14. Growth of TiC films by Pulsed Laser Evaporation (PLE) and characterization by XPS and AES

    International Nuclear Information System (INIS)

    Rist, O.; Murray, P.T.

    1991-01-01

    Thin films of TiC with a thickness of some 100 nm have been grown on Si(100) substrates by Pulsed Laser Evaporation (PLE). Advantages of PLE in comparison with more conventional growth methods e.g. PVD or CVD are reported. The feasibility of growing stoichiometric thin films of TiC by PLE was investigated. These films produced have been analysed in situ by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS results and Auger sputter depht profiles indicate that the films grown between RT and 500degC are stoichiometric TiC. Film/substrate interdiffusion is observed at 600degC substrate temperature and higher. (orig.)

  15. Influence of ion-to-atom ratio on the microstructure of evaporated molybdenum thin films grown using low energy argon ions

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Praveen Kumar, E-mail: praveenyadav@rrcat.gov.in; Nayak, Maheswar; Rai, Sanjay Kumar; Lodha, Gyanendra Singh [X-ray Optics Section, Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Sant, Tushar; Sharma, Surinder Mohan [High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mukherjee, Chandrachur [Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2014-03-15

    The authors report the effect of argon ion to molybdenum atom ratio (r) on the microstructure of low energy (70 eV) argon ion assisted electron beam evaporated Mo thin films. Surface roughness, morphology, and crystallinity of Mo films are found to strongly depend on “r.” Increase of “r” from 0 to 100 induces gradual loss in crystallinity, reduction in surface roughness and systematic increase in density of the film. For “r” ∼ 100, average atomic density of the film approaches the bulk value (97%) with lowest surface roughness. Further, increasing “r” up to 170 reduces the atomic density, increases roughness, and increase in crystallinity induced by low energy Ar ion beam. The observed surface roughness and grain size determined by x-ray reflectivity and glancing incidence x-ray diffraction correlate well with atomic force microscopy measurements. This study demonstrates that for r = 100 one gets lowest roughness Mo film with highest density and nearly amorphous microstructure. The growth model is discussed by structural zone model.

  16. Introducing ultrasonic falling film evaporator for moderate temperature evaporation enhancement.

    Science.gov (United States)

    Dehbani, Maryam; Rahimi, Masoud

    2018-04-01

    In the present study, Ultrasonic Falling Film (USFF), as a novel technique has been proposed to increase the evaporation rate of moderate temperature liquid film. It is a proper method for some applications which cannot be performed at high temperature, such as foodstuff industry, due to their sensitivity to high temperatures. Evaporation rate of sodium chloride solution from an USFF on an inclined flat plate compared to that for Falling Film without ultrasonic irradiation (FF) at various temperatures was investigated. The results revealed that produced cavitation bubbles have different effects on evaporation rate at different temperatures. At lower temperatures, size fluctuation and collapse of bubbles and in consequence induced physical effects of cavitation bubbles resulted in more turbulency and evaporation rate enhancement. At higher temperatures, the behavior was different. Numerous created bubbles joined together and cover the plate surface, so not only decreased the ultrasound vibrations but also reduced the evaporation rate in comparison with FF. The highest evaporation rate enhancement of 353% was obtained at 40 °C at the lowest Reynolds number of 250. In addition, the results reveal that at temperature of 40 °C, USFF has the highest efficiency compared to FF. Copyright © 2017 Elsevier B.V. All rights reserved.

  17. Magneto-optical effect in Mn-Sb thin films

    International Nuclear Information System (INIS)

    Attaran, E.; Sadabadi, M.

    2003-01-01

    The magneto-optic Kerr and Faraday effect of Mn-Sb thin films have been studied. The single and multilayer of this film have grown on glass substrate by evaporation. The optical rotation of linear polarized light has been measured by an optical hysteresis plotter in a I/O converter amplifier circuit. Our results indicate a polar Kerr rotation up to 0.5 degree and in a double Mn S b this rotation research to maximum

  18. Determination of magnetic properties of multilayer metallic thin films

    International Nuclear Information System (INIS)

    Birlikseven, C.

    2000-01-01

    In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the experimental results to the theoretical models, effective magnetization and angles between the ferromagnetic layers were calculated. The correspondence between magnetization and magnetoresistance was evaluated. To see the effect of anisotropic magnetoresistance in the magnetoresistance measurements, a new experimental set-up was build and measurements were taken in this set-up. A series of soft permalloy thin films were made, and temperature dependent resistivity, magnetoresistance, anisotropic magnetoresistance and magnetization measurements were taken

  19. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  20. High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

    Science.gov (United States)

    Rajanikant, Ray Jayminkumar

    The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a

  1. Analytical Solutions of Heat Transfer and Film Thickness with Slip Condition Effect in Thin-Film Evaporation for Two-Phase Flow in Microchannel

    Directory of Open Access Journals (Sweden)

    Ahmed Jassim Shkarah

    2015-01-01

    Full Text Available Physical and mathematical model has been developed to predict the two-phase flow and heat transfer in a microchannel with evaporative heat transfer. Sample solutions to the model were obtained for both analytical analysis and numerical analysis. It is assumed that the capillary pressure is neglected (Morris, 2003. Results are provided for liquid film thickness, total heat flux, and evaporating heat flux distribution. In addition to the sample calculations that were used to illustrate the transport characteristics, computations based on the current model were performed to generate results for comparisons with the analytical results of Wang et al. (2008 and Wayner Jr. et al. (1976. The calculated results from the current model match closely with those of analytical results of Wang et al. (2008 and Wayner Jr. et al. (1976. This work will lead to a better understanding of heat transfer and fluid flow occurring in the evaporating film region and develop an analytical equation for evaporating liquid film thickness.

  2. Film flow analysis for a vertical evaporating tube with inner evaporation and outer condensation

    International Nuclear Information System (INIS)

    Park, Il Seouk

    2008-01-01

    A numerical study for the flow, heat and mass transfer characteristics of the evaporating tube with the films flowing down on both the inside and outside tube walls has been carried out. The condensation occurs along the outside wall while the evaporation occurs at the free surface of the inside film. The transport equations for momentum and energy are parabolized by the boundary-layer approximation and solved by using the marching technique. The calculation domain of 2 film flow regions (evaporating and condensation films at the inside and outside tube wall respectively) and tube wall is solved simultaneously. The coupling technique for the problem with the 3 different regions and the 2 interfaces of them has been developed to calculated the temperature field. The velocity and temperature fields and the amount of the condensed and evaporated mass as well as the position where the evaporating film is completely dried out are successfully predicted for various inside pressures and inside film inlet flow rates

  3. Growth directions of C8-BTBT thin films during drop-casting

    Science.gov (United States)

    Iizuka, Naoki; Zanka, Tomohiko; Onishi, Yosuke; Fujieda, Ichiro

    2016-02-01

    Because charge transport in a single crystal is anisotropic, control of its orientation is important for enhancing electrical characteristics and reducing variations among devices. For growing an organic thin film, a solution process such as inkjet printing offers advantages in throughput. We have proposed to apply an external temperature gradient during drop-casting and to control the direction of solvent evaporation. In experiment, a temperature gradient was generated in a bare Si substrate by placing it on a Si plate bridging two heat stages. When a solution containing 2,7-dioctyl [1]benzothieno[3,2-b]benzothiophene (C8-BTBT) was dropped on the substrate, evaporation started at the hotter side of the droplet and proceeded toward the colder side. The front line of the liquid was not pinned and the solution extended toward the colder region. As a result, a thin film was formed in a 7mm-long region. The peripheral region of the film was significantly thicker due to the coffee ring effect. The surface of the rest of the film was mostly smooth and terrace structures with 2.6nm steps were observed. The step roughly corresponds to the length of the C8-BTBT molecule. The film thickness varied from 20nm to 50nm over the distance of 3mm. Another film was grown on a glass substrate under a similar condition. Observation of the film with a polarizing microscope revealed that fan-shaped domains were formed in the film and that their optical axes were mostly along the directions of the solvent evaporation.

  4. Growth and applications of superconducting Y-Ba-Cu-O thin films

    International Nuclear Information System (INIS)

    Pinto, R.

    1991-01-01

    This paper attempt to highlight the important PVD techniques such as evaporation, sputtering, ion beam deposition and excimer laser ablation for the preparation of superconducting YBaCuO thin films. Since enormous amount of work has been published over the last few years, this review is not comprehensive even in PVD techniques. In the area of applications for electronics, thin film appear to be much more promising than bulk high T c superconductors. Already high J c values in the region of 4 x 10 6 A cm -2 have been realized in thin films. Resonators and transmission lines have been fabricated using 123 films showing a transmission loss significantly lower than that of copper at 77 degrees K at X-band frequencies. This review will discuss some of the important electronic applications feasible with 123 films

  5. Processing of thin SU-8 films

    International Nuclear Information System (INIS)

    Keller, Stephan; Blagoi, Gabriela; Lillemose, Michael; Haefliger, Daniel; Boisen, Anja

    2008-01-01

    This paper summarizes the results of the process optimization for SU-8 films with thicknesses ≤5 µm. The influence of soft-bake conditions, exposure dose and post-exposure-bake parameters on residual film stress, structural stability and lithographic resolution was investigated. Conventionally, the SU-8 is soft-baked after spin coating to remove the solvent. After the exposure, a post-exposure bake at a high temperature T PEB ≥ 90 °C is required to cross-link the resist. However, for thin SU-8 films this often results in cracking or delamination due to residual film stress. The approach of the process optimization is to keep a considerable amount of the solvent in the SU-8 before exposure to facilitate photo-acid diffusion and to increase the mobility of the monomers. The experiments demonstrate that a replacement of the soft-bake by a short solvent evaporation time at ambient temperature allows cross-linking of the thin SU-8 films even at a low T PEB = 50 °C. Fourier-transform infrared spectroscopy is used to confirm the increased cross-linking density. The low thermal stress due to the reduced T PEB and the improved structural stability result in crack-free structures and solve the issue of delamination. The knowledge of the influence of different processing parameters on the responses allows the design of optimized processes for thin SU-8 films depending on the specific application

  6. Indium Tin Oxide thin film gas sensors for detection of ethanol vapours

    International Nuclear Information System (INIS)

    Vaishnav, V.S.; Patel, P.D.; Patel, N.G.

    2005-01-01

    Indium Tin Oxide (ITO: In 2 O 3 + 17% SnO 2 ) thin films grown on alumina substrate at 648 K temperatures using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-2500 ppm). The operating temperature of the sensor was optimized. The sensitivity variation of films having different thickness was studied. The sensitivity of the films deposited on Si substrates was studied. The response of the film with MgO catalytic layer on sensitivity and selectivity was observed. A novel approach of depositing thin stimulating layer of various metals/oxides below the ITO film was tried and tested

  7. Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

    Science.gov (United States)

    Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

    2017-08-29

    Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

  8. Characterization of titanyl phthalocyanine (TiOPc) thin films by microscopic and spectroscopic method

    Science.gov (United States)

    Skonieczny, R.; Makowiecki, J.; Bursa, B.; Krzykowski, A.; Szybowicz, M.

    2018-02-01

    The titanyl phthalocyanine (TiOPc) thin film deposited on glass, silicon and gold substrate have been studied using Raman spectroscopy, atomic force microscopy (AFM), absorption and profilometry measurements. The TiOPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The Raman spectra have been recorded using micro Raman system equipped with a confocal microscope. Using surface Raman mapping techni que with polarized Raman spectra the polymorphic forms of the TiOPc thin films distribution have been obtained. The AFM height and phase image were examined in order to find surface features and morphology of the thin films. Additionally to compare experimental results, structure optimization and vibrational spectra calculation of single TiOPc molecule were performed using DFT calculations. The received results showed that the parameters like polymorphic form, grain size, roughness of the surface in TiOPc thin films can well characterize the obtained organic thin films structures in terms of their use in optoelectronics and photovoltaics devices.

  9. Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

    2015-06-24

    Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

  10. Copper tin sulfide (CTS) absorber thin films obtained by co-evaporation: Influence of the ratio Cu/Sn

    Energy Technology Data Exchange (ETDEWEB)

    Robles, V., E-mail: victor.robles@ciemat.es; Trigo, J.F.; Guillén, C.; Herrero, J.

    2015-09-05

    Highlights: • Copper tin sulfide (CTS) thin films were grown by co-evaporation at different Cu/Sn atomic ratios. • Smooth Cu{sub 2}SnS{sub 3} layers with large grains are obtained at Cu/Sn ⩾ 1.5 and T ⩾ 350 °C. • At 450 °C, the cubic Cu{sub 2}SnS{sub 3} phase changes to tetragonal phase. • Cu{sub 2}SnS{sub 3} presents suitable optical and electrical properties for use as photovoltaic absorbers. - Abstract: Copper tin sulfide thin films have been grown on soda-lime glass substrates from the elemental constituents by co-evaporation. The synthesis was performed at substrate temperatures of 350 °C and 450 °C and different Cu/Sn ratios, adjusting the deposition time in order to obtain thicknesses above 1000 nm. The evolution of the morphological, structural, chemical, optical and electrical properties has been analyzed as a function of the substrate temperature and the Cu/Sn ratio. For the samples with Cu/Sn ⩽ 1, Cu{sub 2}Sn{sub 3}S{sub 7} and Cu{sub 2}SnS{sub 3} have been observed by XRD. Increasing the Cu/Sn to 1.5, the Cu{sub 2}SnS{sub 3} phase was the majority, being the formation completed at Cu/Sn ratio around 2. The increment of the substrate temperature leads to a change of cubic structure to tetragonal of the Cu{sub 2}SnS{sub 3} phase. The chemical treatment with KCN was effective to eliminate CuS excess detected in the samples with Cu/Sn > 2.2. The samples with Cu{sub 2}SnS{sub 3} structure show a band gap energy increasing from 0.9 to 1.25 eV and an electrical resistivity decreasing from 7 ∗ 10{sup −2} Ω cm to 3 ∗ 10{sup −3} Ω cm when the Cu/Sn atomic ratio increases from 1.5 to 2.2.

  11. The film thickness dependent thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Xiao Xiudi; Xu Gang, E-mail: xiudixiao@163.com; Xiong Bin; Chen Deming; Miao Lei [Chinese Academy of Sciences, Key Laboratory of Renewable Energy and Gas Hydrates, Guangzhou Institute of Energy Conversion (China)

    2012-03-15

    The monolayer Al{sub 2}O{sub 3}:Ag thin films were prepared by magnetron sputtering. The microstructure and optical properties of thin film after annealing at 700 Degree-Sign C in air were characterized by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometer. It revealed that the particle shape, size, and distribution across the film were greatly changed before and after annealing. The surface plasmon resonance absorption and thermal stability of the film were found to be strongly dependent on the film thickness, which was believed to be associated with the evolution process of particle diffusion, agglomeration, and evaporation during annealing at high temperature. When the film thickness was smaller than 90 nm, the film SPR absorption can be attenuated until extinct with increasing annealing time due to the evaporation of Ag particles. While the film thickness was larger than 120 nm, the absorption can keep constant even after annealing for 64 h due to the agglomeration of Ag particles. On the base of film thickness results, the multilayer Al{sub 2}O{sub 3}:Ag solar selective thin films were prepared and the thermal stability test illustrated that the solar selectivity of multilayer films with absorbing layer thickness larger than 120 nm did not degrade after annealing at 500 Degree-Sign C for 70 h in air. It can be concluded that film thickness is an important factor to control the thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers.

  12. Bioplasmonic Alloyed Nanoislands Using Dewetting of Bilayer Thin Films.

    Science.gov (United States)

    Kang, Minhee; Ahn, Myeong-Su; Lee, Youngseop; Jeong, Ki-Hun

    2017-10-25

    Unlike monometallic materials, bimetallic plasmonic materials offer extensive benefits such as broadband tuning capability or high environmental stability. Here we report a broad range tuning of plasmon resonance of alloyed nanoislands by using solid-state dewetting of gold and silver bilayer thin films. Thermal dewetting after successive thermal evaporation of thin metal double-layer films readily forms AuAg-alloyed nanoislands with a precise composition ratio. The complete miscibility of alloyed nanoislands results in programmable tuning of plasmon resonance wavelength in a broadband visible range. Such extraordinary tuning capability opens up a new direction for plasmonic enhancement in biophotonic applications such as surface-enhanced Raman scattering or plasmon-enhanced fluorescence.

  13. Thin film deposition and characterization of pure and iron-doped electron-beam evaporated tungsten oxide for gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Tesfamichael, Tuquabo, E-mail: t.tesfamichael@qut.edu.a [Faculty of Built Environment and Engineering, School of Engineering Systems, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Arita, Masashi [Graduate School of Information Science and Technology, Hokkaido University, Kita-14, Nishi-9, Kita-ku, Sapporo, 060-0814 (Japan); Bostrom, Thor [Faculty of Science and Technology, School of Physical and Chemical Sciences, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Bell, John [Centre for Built Environment and Engineering Research, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia)

    2010-06-30

    Pure tungsten oxide (WO{sub 3}) and iron-doped (10 at.%) tungsten oxide (WO{sub 3}:Fe) nanostructured thin films were prepared using a dual crucible Electron Beam Evaporation (EBE) technique. The films were deposited at room temperature under high vacuum onto glass as well as alumina substrates and post-heat treated at 300 {sup o}C for 1 h. Using Raman spectroscopy the as-deposited WO{sub 3} and WO{sub 3}:Fe films were found to be amorphous, however their crystallinity increased after annealing. The estimated surface roughness of the films was similar (of the order of 3 nm) to that determined using Atomic Force Microscopy (AFM). As observed by AFM, the WO{sub 3}:Fe film appeared to have a more compact surface as compared to the more porous WO{sub 3} film. X-ray photoelectron spectroscopy analysis showed that the elemental stoichiometry of the tungsten oxide films was consistent with WO{sub 3}. A slight difference in optical band gap energies was found between the as-deposited WO{sub 3} (3.22 eV) and WO{sub 3}:Fe (3.12 eV) films. The differences in the band gap energies of the annealed films were significantly higher, having values of 3.12 eV and 2.61 eV for the WO{sub 3} and WO{sub 3}:Fe films respectively. The heat treated films were investigated for gas sensing applications using noise spectroscopy. It was found that doping of Fe to WO{sub 3} produced gas selectivity but a reduced gas sensitivity as compared to the WO{sub 3} sensor.

  14. Photoluminescence of Eu-doped LiYF4 thin films grown by pulsed laser deposition and matrix-assisted pulsed laser evaporation

    International Nuclear Information System (INIS)

    Stokker-Cheregi, F; Matei, A; Dinescu, M; Secu, C E; Secu, M

    2014-01-01

    Matrix-assisted pulsed laser evaporation (MAPLE) has been investigated as an alternative to the pulsed laser deposition (PLD) technique for Eu 3+ -doped crystalline LiYF 4 thin-films deposition. MAPLE assumes laser ablation of a frozen target made of the material of interest diluted in a solvent, rather than that of a bulk target, of either pressed powder or single crystal, used in the case of PLD. Our approach stems from the assumption that laser ablation of a frozen dilute target would result in thin films with improved morphology, as compared to PLD. Indeed, we find that roughness values of samples obtained by the MAPLE technique are four times lower than in the case of PLD. A lower transmittance was noticed for PLD obtained layers with respect to those grown by MAPLE due to strong scattering of light by the morphological defects. Photoluminescence spectra are showing characteristic Eu 3+ -ion luminescence bands at 578, 591, 612, 650 and 698 nm ( 5 D 0  →  7 F J ); crystal field splitting of the bands indicates dopant ions incorporation in the host material during transfer by either PLD or MAPLE. (paper)

  15. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the ...

  16. Removing the by-products acetic acid and NH4+ from the l-tryptophan broth by vacuum thin film evaporation during l-tryptophan production

    Directory of Open Access Journals (Sweden)

    Qingyang Xu

    2018-05-01

    Full Text Available Background: During l-tryptophan production by Escherichia coli, the by-products, acetic acid and NH4+, accumulate in the fermentation broth, resulting in inhibited cell growth and activity and decreased l-tryptophan production. To improve the l-tryptophan yield and glucose conversion rate, acetic acid and NH4+ were removed under low-temperature vacuum conditions by vacuum scraper concentrator evaporation; the fermentation broth after evaporation was pressed into another fermenter to continue fermentation. To increase the volatilisation rate of acetic acid and NH4+ and reduce damage to bacteria during evaporation, different vacuum evaporation conditions were studied. Results: The optimum operating conditions were as follows: vacuum degree, 720 mm Hg; concentration ratio, 10%; temperature, 60°C; and feeding rate, 300 mL/min. The biomass yield of the control fermentation (CF and fermentation by vacuum evaporation (VEF broths was 55.1 g/L and 58.3 g/L at 38 h, respectively, (an increase of 5.8%; the living biomass yield increased from 8.9 (CF to 10.2 pF (VEF; an increase of 14.6%. l-tryptophan production increased from 50.2 g/L (CF to 60.2 g/L (VEF (an increase of 19.9%, and glucose conversion increased from 18.2% (CF to 19.5% (VEF; an increase of 7.1%. The acetic acid concentrations were 2.74 g/L and 6.70 g/L, and the NH4+ concentrations were 85.3 mmol/L and 130.9 mmol/L in VEF and CF broths, respectively. Conclusions: The acetic acid and NH4+ in the fermentation broth were quickly removed using the vacuum scraper concentrator, which reduced bacterial inhibition, enhanced bacterial activity, and improved the production of l-tryptophan and glucose conversion rate.How to cite: Xu Q, Bai F, Chen N, et al. Removing the by-products acetic acid and NH4+ from the l-tryptophan broth by vacuum thin film evaporation during l-tryptophan production. Electron J Biotechnol 2018; 33. https://doi.org/10.1016/j.ejbt.2018.04.003. Keywords: Acetic acid

  17. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  18. Enhancement of Jc of MgB2 thin films by introduction of oxygen during deposition

    International Nuclear Information System (INIS)

    Mori, Zon; Doi, Toshiya; Hakuraku, Yoshinori; Kitaguchi, Hitoshi

    2006-01-01

    The introduction of various pinning center are examined as the effective means for improvement of J c of MgB 2 thin films. We have investigated the effects of introduction of oxygen during deposition on the superconducting properties of MgB 2 thin films. MgB 2 thin films were prepared on polished sapphire C(0001) single crystal substrates by using electron beam evaporation technique (EB) without any post-annealing. The background pressure was less than 1.3x10 -6 Pa. The evaporation flux ratio of Mg was set at 30 times as high as that of B, and the growth rate of MgB 2 film was 1nm/s. The film thickness was typically 300nm at 5min deposition. The substrate temperature was 245 deg. C. Under these conditions, we controlled the oxygen partial pressure (P O 2 ) within the range from 1.3x10 -6 to 1.3x10 -3 Pa by using a quadrapole mass spectrometer. Although T c of deposited thin film decreased in order of P O 2 , ΔM in the magnetization hysteresis loops measured from 0 to 6T at 4.2K increased up to 1.3x10 -5 . On the other hand, thin film prepared under P O 2 of 1.3x10 -3 Pa does not show superconducting transition. Between these films, there is no difference in the crystal structure from X-ray diffraction (XRD). These results suggest that the pinning center in the thin films increased by introduction of oxygen. Extremely small amount of oxygen introduction has enabled the control of growth of oxide

  19. Investigation of nanocrystalline thin cobalt films thermally evaporated on Si(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kozłowski, W., E-mail: wkozl@std2.phys.uni.lodz.pl [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Balcerski, J.; Szmaja, W. [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź (Poland); Piwoński, I. [Department of Materials Technology and Chemistry, Faculty of Chemistry, University of Łódź, Pomorska 163, 90-236 Łódź (Poland); Batory, D. [Institute of Materials Science and Engineering, Łódź University of Technology, Stefanowskiego 1/15, 90-924 Łódź (Poland); Miękoś, E. [Department of Inorganic and Analytical Chemistry, Faculty of Chemistry, University of Łódź, Tamka 12, 91-403 Łódź (Poland); and others

    2017-03-15

    We have made a quantitative study of the morphological and magnetic domain structures of 100 nm thick nanocrystalline cobalt films thermally evaporated on naturally oxidized Si(100) substrates. The morphological structure is composed of densely packed grains with the average grain size (35.6±0.8) nm. The grains exhibit no geometric alignment and no preferred elongation on the film surface. In the direction perpendicular to the film surface, the grains are aligned in columns. The films crystallize mainly in the hexagonal close-packed phase of cobalt and possess a crystallographic texture with the hexagonal axis perpendicular to the film surface. The magnetic domain structure consists of domains forming a maze stripe pattern with the average domain size (102±6) nm. The domains have their magnetizations oriented almost perpendicularly to the film surface. The domain wall energy, the domain wall thickness and the critical diameter for single-domain particle were determined. - Highlights: • 100 nm thick nanocrystalline cobalt films on Si(100) were studied quantitatively. • The grains are densely packed and possess the average size (35.6±0.8) nm. • The films have a texture with the hexagonal axis perpendicular to the film surface. • The magnetic domains form a maze stripe pattern with the average size (102±6) nm. • The domains are magnetized almost perpendicularly to the film surface.

  20. Growth of high-quality large-area MgB2 thin films by reactive evaporation

    International Nuclear Information System (INIS)

    Moeckly, B H; Ruby, W S

    2006-01-01

    We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)

  1. Effect of the ITO substrate on the growth of Cu(In,Ga)Se{sub 2}, CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films by flash evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, E J; Merino, J M; Leon, M [Department of Applied Physics, Universidad Autonoma de Madrid (UAM), Cantoblanco, 28049 Madrid (Spain); Trigo, J F; Guillen, C [Department of Energy, CIEMAT, Avda Complutense, 22, 28040 Madrid (Spain); Ramiro, J, E-mail: josue.friedrich@uam.e [Department of Theory of Signal and Communications, URJC, Campus Fuenlabrada, 122, 28943 Madrid (Spain)

    2009-04-21

    Structural, compositional, electrical and morphological properties of CuIn{sub 1-x}Ga{sub x}Se{sub 2} (x = 0.15, 0.30) and ordered defect compounds (ODC) CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8}, CuIn{sub 3}Se{sub 5} thin films grown by flash evaporation onto soda lime glass substrates (SLG) and ITO/SLG have been studied. Polycrystalline thin films with accentuated preferential orientation in the (1 1 2) plane of the tetragonal structure have been obtained. Annealing in Se atmosphere improves the structural, morphological, electrical and optical properties of the evaporated films, but provokes the formation of a CuIn{sub x}Se{sub y} phase on the surface of the films. Band gap values ranging between 1.01 and 1.21 eV have been obtained for the as-grown CuIn{sub 1-x}Ga{sub x}Se{sub 2} thin films and between 1.09 and 2.01 eV for the CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films.

  2. Crystal Structure, Optical, and Electrical Properties of SnSe and SnS Semiconductor Thin Films Prepared by Vacuum Evaporation Techniques for Solar Cell Applications

    Science.gov (United States)

    Ariswan; Sutrisno, H.; Prasetyawati, R.

    2017-05-01

    Thin films of SnSe and SnS semiconductors had been prepared by vacuum evaporation techniques. All prepared samples were characterized on their structure, optical, and electrical properties in order to know their application in technology. The crystal structure of SnSe and SnS was determined by X-Ray Diffraction (XRD) instrument. The morphology and chemical composition were obtained by Scanning Electron Microscopy (SEM) coupled with Energy Dispersive of X-Ray Analysis (EDAX). The optical property such as band gap was determined by DR-UV-Vis (Diffuse Reflectance-Ultra Violet-Visible) spectroscopy, while the electrical properties were determined by measuring the conductivity by four probes method. The characterization results indicated that both SnSe and SnS thin films were polycrystalline. SnSe crystallized in an orthorhombic crystal system with the lattice parameters of a = 11.47 Å, b = 4.152 Å and c = 4.439 Å, while SnS had an orthorhombic crystal system with lattice parameters of a = 4.317 Å, b = 11.647 Å and c = 3.981 Å. Band gaps (Eg) of SnSe and SnS were 1.63 eV and 1.35 eV, respectively. Chemical compositions of both thin films were non-stoichiometric. Molar ratio of Sn : S was close to ideal which was 1 : 0.96, while molar ratio of Sn : S was 1 : 0.84. The surface morphology described the arrangement of the grains on the surface of the thin film with sizes ranging from 0.2 to 0.5 microns. Color similarity on the surface of the SEM images proved a homogenous thin layer.

  3. Structure and photoluminescence of Mn-passivated nanocrystalline ZnO:S thin films

    International Nuclear Information System (INIS)

    Tong, Y.H.; Tang, Q.X.; Liu, Y.C.; Shao, C.L.; Xu, C.S.; Liu, Y.X.

    2005-01-01

    Mn-passivated nanocrystalline ZnO:S thin films were fabricated by thermally oxidizing Mn-doped ZnS (ZnS:Mn) films prepared by electron beam evaporation. Mn was introduced to passivate the surface defects of ZnO and to improve the optical properties. X-ray diffraction (XRD) and photoluminescence (PL) spectra at 81.9 K indicated the S content in ZnO thin film gradually decreased with increasing annealing temperature. The fitted result of the temperature-dependent PL spectra in the range from 81.9 to 302.2 K showed that S dopant could broaden the optical band gap energy of ZnO. Room temperature PL spectra confirmed that the ultraviolet peak shifted to lower energy with the decrease of S content in the thin film because of the Burstein-Moss effect

  4. Structural and optical properties of Sb65Se35-xGex thin films

    Science.gov (United States)

    Saleh, S. A.; Al-Hajry, A.; Ali, H. M.

    2011-07-01

    Sb65Se35-xGex (x=0-20 at.%) thin films, prepared by the electron beam evaporation technique on ultrasonically cleaned glass substrates at 300 K, were investigated. The amorphous structure of the thin films was confirmed by x-ray diffraction analysis. The structure was deduced from the Raman spectra measured for all germanium contents in the Sb-Se-Ge matrix. The absorption coefficient (α) of the films was determined by optical transmission measurements. The compositional dependence of the optical band gap is discussed in light of topological and chemical ordered network models.

  5. Effect on the properties of ITO thin films in Gamma environment

    Science.gov (United States)

    Sofi, A. H.; Shah, M. A.; Asokan, K.

    2018-04-01

    The present study reports the effect of gamma irradiation of varying doses (0-200 kGy) on the physical properties of the indium tin oxide (ITO) thin films. The films were fabricated by thermal evaporation method using indium-tin (InSn) ingots followed by an oxidation in atmosphere at a temperature of 550 °C. X-ray diffraction analysis confirmed the body-centered cubic (BCC) structure corresponds to the ITO thin films, high phase purity and a variation in crystallite size between 30-44 nm. While the optical studies revealed an increase in transmission as well as variation in optical band gap, the electrical studies confirmed n-type semiconductive behavior of the thin films, increase in mobility and a decrease in resistivity from 2.33×10-2 - 9.31×10-4 Ωcm with the increase in gamma dose from 0-200 kGy. The gamma irradiation caused totally electronic excitation and resulted in this modifications. The degenerate electron gas model was considered when attempting to understand the prevalent scattering mechanism in gamma irradiated ITO thin films.

  6. Structural and magnetic properties of pure and Cu doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam –603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

    2015-06-24

    Pure and Cu (7 at.%) doped In{sub 2}O{sub 3} thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In{sub 2}O{sub 3} thin films showed ferromagnetism at room temperature. The Cu doped In{sub 2}O{sub 3} thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm{sup 3}, 245 G and 5.54 emu/cm{sup 3}, respectively.

  7. Preparation and Analysis of Platinum Thin Films for High Temperature Sensor Applications

    Science.gov (United States)

    Wrbanek, John D.; Laster, Kimala L. H.

    2005-01-01

    A study has been made of platinum thin films for application as high temperature resistive sensors. To support NASA Glenn Research Center s high temperature thin film sensor effort, a magnetron sputtering system was installed recently in the GRC Microsystems Fabrication Clean Room Facility. Several samples of platinum films were prepared using various system parameters to establish run conditions. These films were characterized with the intended application of being used as resistive sensing elements, either for temperature or strain measurement. The resistances of several patterned sensors were monitored to document the effect of changes in parameters of deposition and annealing. The parameters were optimized for uniformity and intrinsic strain. The evaporation of platinum via oxidation during annealing over 900 C was documented, and a model for the process developed. The film adhesion was explored on films annealed to 1000 C with various bondcoats on fused quartz and alumina. From this compiled data, a list of optimal parameters and characteristics determined for patterned platinum thin films is given.

  8. Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

    International Nuclear Information System (INIS)

    Prakash, Deo; Shaaban, E.R.; Shapaan, M.; Mohamed, S.H.; Othman, A.A.; Verma, K.D.

    2016-01-01

    Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

  9. Influence of thin film nickel pretreatment on catalytic thermal chemical vapor deposition of carbon nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Tiggelaar, R.M. [Mesoscale Chemical Systems, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Thakur, D.B.; Nair, H.; Lefferts, L.; Seshan, K. [Catalytic Processes and Materials, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Gardeniers, J.G.E., E-mail: j.g.e.gardeniers@utwente.nl [Mesoscale Chemical Systems, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2013-05-01

    Nickel and other metal nanoparticles are known to be active as catalysts in the synthesis of carbon nanofibers. In this paper we investigate how dewetting and break-up of nickel thin films depends on film thickness, film–substrate interaction and pretreatment conditions. This is evaluated for films evaporated on oxidized silicon and fused silica substrates with or without tantalum coating, which were subsequently exposed to different pretreatment atmospheres (vacuum, nitrogen, air and hydrogen; 1 h, 650 °C). Atomic force microscopy, scanning electron microscopy and energy dispersive X-ray analysis were used to characterize the films. Pretreated Ni films were subjected to a thermal catalytic chemical vapor deposition procedure with brief ethylene exposures (0.5–3 min, 635 °C). It was found that only on the spherical nanoparticles originating from a hydrogen pretreatment of a Ni film with Ta adhesion layer, homogeneously distributed, randomly-oriented, well-attached, and semi-crystalline carbon nanofibers be synthesized. - Highlights: • On the formation of nanoparticles required for carbon nanofiber (CNF) synthesis • Various evaporated thin films on oxidized silicon and fused silica: Ni and Ni/Ta • Pretreatment of nickel-based thin films in vacuum, nitrogen, air and hydrogen • Only on reduced Ni/Ta fast – within 3 min – initiation of CNF nucleation and growth.

  10. Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Deo [School of Computer Science & Engineering, Faculty of Engineering, SMVD University, Kakryal, Katra 182320, J& K (India); Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com [Physics Department, Faculty of Science, Al-Azhar University, Assiut 71542 (Egypt); Shapaan, M. [Department of Physics, Faculty of Science, Al-Azahar University, Cairo (Egypt); Mohamed, S.H. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Othman, A.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Verma, K.D., E-mail: kdverma1215868@gmail.com [Material Science Research Laboratory, Department of Physics, S. V. College, Aligarh 202001, U.P. (India)

    2016-08-15

    Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

  11. Post-growth annealing treatment effects on properties of Na-doped CuInS2 thin films

    International Nuclear Information System (INIS)

    Zribi, M.; Kanzari, M.; Rezig, B.

    2008-01-01

    Structural and optical properties of Na-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. The films were annealed from 250 to 500 deg. C in a vacuum after evaporation. X-ray diffraction pattern indicated that there are traces of Cu and In 6 S 7 , which disappeared on annealing above 350 deg. C. Good quality CuInS 2 :Na 0.3% films were obtained on annealing at 500 deg. C. Furthermore, we found that the absorption coefficient of Na-doped CuInS 2 thin films reached 1.5 x 10 5 cm -1 . The change in band gap of the doped samples annealed in the temperatures from 250 to 500 deg. C was in the range 0.038-0.105 eV

  12. Experimental study of falling film evaporation in large scale rectangular channel

    International Nuclear Information System (INIS)

    Huang, X.G.; Yang, Y.H.; Hu, P.

    2015-01-01

    Highlights: • This paper studies the falling film evaporation in large scale rectangular channel experimentally. • The effects of air flow rate, film temperature and film flow rate on falling film evaporation are analyzed. • Increasing the air flow rate is considered as an efficient method to enhance the evaporation rate. • A correlation including the wave effect for falling film evaporation is derived based on heat and mass transfer analogy. - Abstract: The falling film evaporation in a large scale rectangular channel is experimentally studied in this paper for the design and improvement of passive containment cooling system. The evaporation mass transfer coefficient h D is obtained by the evaporation rate and vapor partial pressure difference of film surface and air bulk. The experimental results indicate that increasing of air flow rate appears to enhance h D , while the film temperature and film flow rate have little effect on h D . Since the wave effect on evaporation is noticed in experiment, the evaporation mass transfer correlation including the wave effect is developed on the basis of heat and mass transfer analogy and experimental data

  13. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  14. Crystallized InBiS3 thin films with enhanced optoelectronic properties

    Science.gov (United States)

    Ali, N.; Hussain, Arshad; Ahmed, R.; Omar, M. Firdaus Bin; Sultan, M.; Fu, Yong Qing

    2018-04-01

    In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth sulphide thin films, and the synergetic effects of co-evaporation of two sources (indium granules and Bi2S3 powders) were investigated using different characterization techniques. X-ray diffraction (XRD) analysis confirmed the crystalline orthorhombic structure for the post-annealed samples. Surface roughness and crystal size of the obtained film samples were increased with increasing annealing temperatures. Analysis using X-ray photoelectron spectroscopy showed the formation of the InBiS3 structure for the obtained films, which is also confirmed by the XRD results. The optical absorption coefficient value of the annealed samples was found to be in the order of 105 cm-1 in the visible region of the solar spectrum. The optical band gap energy and electrical resistivity of the fabricated samples were observed to decrease (from 2.2 to 1.3 eV, and from 0.3 to 0.01 Ω-cm, respectively) with increasing annealing temperatures (from 200 to 350 °C), indicating the suitability of the prepared InBiS3 thin films for solar cell applications.

  15. Electrical and optical properties of thermally-evaporated thin films from A2[TiO(C2O4)2] (A = K, PPh4) and 1,8-dihydroxyanthraquinone

    International Nuclear Information System (INIS)

    Carbia-Ruelas, E.; Sanchez-Vergara, M.E.; Garcia-Montalvo, V.; Morales-Saavedra, O.G.; Alvarez-Bada, J.R.

    2011-01-01

    In this work, the synthesis of molecular materials formed from A 2 [TiO(C 2 O 4 ) 2 ] (A = K, PPh4) and 1,8 dihydroxyanthraquinone is reported. The synthesized materials were characterized by atomic force microscopy (AFM), infrared (IR) and ultraviolet-visible (UV-vis) spectroscopy. IR spectroscopy showed that the molecular-material thin-films, deposited by vacuum thermal evaporation, exhibit the same intra-molecular vibration modes as the starting powders, which suggests that the thermal evaporation process does not alter the initial chemical structures. Electrical transport properties were studied by dc conductivity measurements. The electrical activation energies of the complexes, which were in the range of 0.003-1.16 eV, were calculated from Arrhenius plots. Optical absorption studies in the wavelength range of 190-1090 nm at room temperature showed that the optical band gaps of the thin films were around 1.9-2.3 eV for direct transitions Eg d . The cubic NLO effects were substantially enhanced for materials synthesized from K 2 [TiO(C 2 O 4 ) 2 ], where χ (3) (-3ω; ω, ω, ω) values in the promising range of 10 -12 esu have been evaluated.

  16. Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

    International Nuclear Information System (INIS)

    Kukli, K.; University of Tartu, Tartu,; Johansson, L-S.; Nykaenen, E.; Peussa, M.; Ninistoe, L.

    1998-01-01

    Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y 2 O 2 S: Eu 3+ for colour TV. Attempts to grow thin films of Y 2 O 2 S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H 2 S and Y(thd) 3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y 2 O 2 S thin film which was characterized by XRD, XRF and XPS

  17. Regulating effect of SiO2 interlayer on optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong

    2013-01-01

    ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays

  18. High-frequency properties of superconducting Y-Ba-Cu-oxide thin films

    International Nuclear Information System (INIS)

    Ramakrishnan, E.S.; Su, M.; Howng, W.

    1992-01-01

    rf and microwave properties of superconducting YBa 2 Cu 3 O 7-x thin films were measured and analyzed using a coplanar resonator structure. The films were developed by sequential electron-beam evaporation of the metals followed by postanneal processing. dc properties of the films were obtained from resistance-temperature and current-voltage measurements to evaluate the transition temperature and current densities. High-frequency properties were measured from 70 to 10 K and in the frequency range 1--3 GHz to determine the film characteristics as compared to pure copper films on the same substrates

  19. Characterization of MAPLE deposited WO3 thin films for electrochromic applications

    Science.gov (United States)

    Boyadjiev, S. I.; Stefan, N.; Szilágyi, I. M.; Mihailescu, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Besleaga, C.; Iliev, M. T.; Gesheva, K. A.

    2017-01-01

    Tungsten trioxide (WO3) is a widely studied material for electrochromic applications. The structure, morphology and optical properties of WO3 thin films, grown by matrix assisted pulsed laser evaporation (MAPLE) from monoclinic WO3 nano-sized particles, were investigated for their possible application as electrochromic layers. A KrF* excimer (λ=248 nm, ζFWHM=25 ns) laser source was used in all experiments. The MAPLE deposited WO3 thin films were studied by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD) and Fourier transform infrared spectroscopy (FTIR). Cyclic voltammetry measurements were also performed, and the coloring and bleaching were observed. The morpho-structural investigations disclosed the synthesis of single-phase monoclinic WO3 films consisting of crystalline nano-grains embedded in an amorphous matrix. All thin films showed good electrochromic properties, thus validating application of the MAPLE deposition technique for the further development of electrochromic devices.

  20. Characterization of MAPLE deposited WO3 thin films for electrochromic applications

    International Nuclear Information System (INIS)

    Boyadjiev, S I; Iliev, M T; Stefan, N; Mihailescu, N; Visan, A; Mihailescu, I N; Szilágyi, I M; Stan, G E; Besleaga, C; Gesheva, K A

    2017-01-01

    Tungsten trioxide (WO 3 ) is a widely studied material for electrochromic applications. The structure, morphology and optical properties of WO 3 thin films, grown by matrix assisted pulsed laser evaporation (MAPLE) from monoclinic WO 3 nano-sized particles, were investigated for their possible application as electrochromic layers. A KrF* excimer (λ=248 nm, ζ FWHM =25 ns) laser source was used in all experiments. The MAPLE deposited WO 3 thin films were studied by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD) and Fourier transform infrared spectroscopy (FTIR). Cyclic voltammetry measurements were also performed, and the coloring and bleaching were observed. The morpho-structural investigations disclosed the synthesis of single-phase monoclinic WO 3 films consisting of crystalline nano-grains embedded in an amorphous matrix. All thin films showed good electrochromic properties, thus validating application of the MAPLE deposition technique for the further development of electrochromic devices. (paper)

  1. Growth and properties of CuInS2 thin films

    International Nuclear Information System (INIS)

    Agarwal, M.K.; Patel, P.D.; Chaki, Sunil H.; Lakshminarayana, D.

    1998-01-01

    Single phase copper indium disulphide (CuInS 2 ) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCl and glass substrates by flash evaporation. The films were found to be n-type semiconducting. The influence of the substrate temperature on the crystallinity, conductivity, activation energy and optical band gap was studied. An improvement in the film properties could be achieved up to a temperature of 523 K at a molybdenum source temperature of 1873 K. (author)

  2. Spectroscopic ellipsometry investigations of optical anisotropy in obliquely deposited hafnia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tokas, R. B., E-mail: tokasstar@gmail.com; Jena, Shuvendu; Thakur, S.; Sahoo, N. K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-85 (India); Haque, S. Maidul; Rao, K. Divakar [Photonics & Nanotechnology Section, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre facility, Visakhapatnam-530012 (India)

    2016-05-23

    In present work, HfO{sub 2} thin films have been deposited at various oblique incidences on Si substrates by electron beam evaporation. These refractory oxide films exhibited anisotropy in refractive index predictably due to special columnar microstructure. Spectroscopic ellipsometry being a powerful tool for optical characterization has been employed to investigate optical anisotropy. It was observed that the film deposited at glancing angle (80°) exhibits the highest optical anisotropy. Further, anisotropy was noticed to decrease with lower values of deposition angles while effective refractive index depicts opposite trend. Variation in refractive index and anisotropy has been explained in light of atomic shadowing during growth of thin films at oblique angles.

  3. XPS analysis and structural and morphological characterization of Cu{sub 2}ZnSnS{sub 4} thin films grown by sequential evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gordillo, G. [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Calderón, C., E-mail: clcalderont@unal.edu.co [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Bartolo-Pérez, P. [Departamento de Física Aplicada, CINVESTAV-IPN, Mérida, Yuc. (Mexico)

    2014-06-01

    This work describes a procedure to grow single phase Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with tetragonal-kesterite type structure, through sequential evaporation of the elemental metallic precursors under sulphur vapor supplied from an effusion cell. X-ray diffraction analysis (XRD) is mostly used for phase identification but cannot clearly distinguish the formation of secondary phases such as Cu{sub 2}SnS{sub 3} (CTS) because both compounds have the same diffraction pattern; therefore the use of a complementary technique is needed. Raman scattering analysis was used to distinguish these phases. The influence of the preparation conditions on the morphology and phases present in CZTS thin films were investigated through measurements of scanning electron microscopy (SEM) and XRD, respectively. From transmittance measurements, the energy band gap of the CZTS films was estimated to be around 1.45 eV. The limitation of XRD to identify some of the remaining phases after the growth process are investigated and the results of Raman analysis on the phases formed in samples grown by this method are presented. Further, the influence of the preparation conditions on the homogeneity of the chemical composition in the volume was studied by X-ray photoelectron spectroscopy (XPS) analysis.

  4. Decomposition of thermally unstable substances in film evaporators

    Energy Technology Data Exchange (ETDEWEB)

    Matz, G

    1982-10-01

    It is widely known that film evaporators are considered to permit really gentle evaporation of heat-sensitive substances. Nevertheless, decomposition of such substance still occurs to an extent depending upon the design and operation of the evaporator. In the following a distinction is made between evaporators with films not generated mechanically, namely the long tube evaporator (lTE) or climbing film evaporator, the falling film evaporator (FFE) and the multiple phase helical tube (MPT) or helical coil evaporators (TFE). Figs 1 and 2 illustrate the mode of operation. A theory of the decomposition of thermally unstable substances in these evaporators is briefly outlined and compared with measurements. Such a theory cannot be developed without any experimental checks; on the other hand, meausrements urgently need a theoretical basis if only to establish what actually has to be measured. All experiments are made with a system of readily adjustable decomposability, namely with aqueous solutions of saccharose; the thermal inversion of this compound can be controlled by addition of various amounts or concentrations of hydrochloric acid. In the absence of any catalysis by hydrochloric acid, the decomposition rates within in the temperature interval studied (60-130/sup 0/C) are so low that the experiments would take much too long and determination of the concentration differences (generally by polarimetric methods) would be very complicated. Such slight effects would also be very unfavourable for comparison with theory. (orig.)

  5. Refrigerant falling film evaporation review: Description, fluid dynamics and heat transfer

    International Nuclear Information System (INIS)

    Fernández-Seara, José; Pardiñas, Ángel Á.

    2014-01-01

    Falling film horizontal tube evaporators for refrigeration equipment are an interesting alternative to pool boiling evaporators concerning operation costs, safety, thermodynamic efficiency, charge of refrigerant or size. Plenty of literature works studied falling film evaporation, but for its application in fields such as desalination and petrochemical industry or OTEC. This review focuses mainly on those works from the literature that analysed the main issues of falling film evaporation of refrigerants, to better understand heat transfer and fluid dynamics in such evaporators. First, falling film evaporation is described and compared to pool boiling, to define its main advantages and inconveniences. Then, the literature concerning film around the tubes and between them is analysed, as well as the phenomenon of film breakdown, which sharply deteriorates the heat transfer performance of falling film evaporators. After it, the results from those works that studied analytically and experimentally the heat transfer coefficients (HTCs) with different types of tubes and refrigerants are discussed. The review finishes with a brief summary of important parameters of falling film evaporation, which might be useful for the design of such equipment. - Highlights: •We defined falling film evaporation and compared it with pool boiling. •We reviewed works from the literature concerning refrigerant falling film evaporation. •We classified the ideas from the works attending to crucial aspects of the process. •We developed a summary of the main ideas which could be useful for design purpose

  6. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  7. Novel Vacuum System for In-Situ Characterization of Fluorescence Properties of Thin Films

    Science.gov (United States)

    Onozuka, Kohei; Iwata, Nobuyuki; Yamamoto, Hiroshi

    We constructed a novel vacuum system in which the cathode luminescence properties of as-prepared films can be measured in-situ. It has been observed that the Zn-Ga-O films deposited on 500°C ITO by sputtering emits light with wavelength of about 500 nm from an ultra thin Zn-rich layer formed near film surface. The luminescence induced by irradiation of electrons has also been observed for the first time in the organic bilayered TPD/Alq3 films prepared in thermal evaporation. Its wavelength blue-shifts by about 120 nm in comparison with the electroluminescence of the same materials. The developed vacuum system is useful to characterize various thin films.

  8. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  9. Studies of thin films of Ti- Zr -V as non-evaporable getter films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Gupta, Nidhi; Jagannath,; Sharma, R. K.; Gadkari, S. C.; Muthe, K. P.; Mukundhan, R.; Gupta, S. K.

    2013-01-01

    Non-Evaporable Getter (NEG) films of the Ti-Zr-V prepared on stainless steel substrates by Radio Frequency sputtering. To observe its getter behavior at the lowest activation temperature, the sample is heated continuously at different temperatures (100°C, 150°C, 200°C and 250°C) for 2 hours. The changes of the surface chemical composition at different temperaturesare analyzed by using XPS and SEM (Scanning Electron Microscopy) techniques. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy (EDX). The in-situ XPS measurements of the activated getter films show the disappearance of the superficial oxide layer through the variation in the oxygen stoichiometry during thermal activation. Results of these studies show that the deposited films of Ti-Zr-V could be used as NEG to produce extreme high vacuum.

  10. Variable angle spectroscopic ellipsometric characterization of HfO2 thin film

    Science.gov (United States)

    Kumar, M.; Kumari, N.; Karar, V.; Sharma, A. L.

    2018-02-01

    Hafnium Oxide film was deposited on BK7 glass substrate using reactive oxygenated E-Beam deposition technique. The film was deposited using in-situ quartz crystal thickness monitoring to control the film thickness and rate of evaporation. The thin film was grown with a rate of deposition of 0.3 nm/s. The coated substrate was optically characterized using spectrophotometer to determine its transmission spectra. The optical constants as well as film thickness of the hafnia film were extracted by variable angle spectroscopic ellipsometry with Cauchy fitting at incidence angles of 65˚, 70˚ and 75˚.

  11. Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2018-03-01

    The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

  12. Development of an ion-beam sputtering system for depositing thin films and multilayers of alloys and compounds

    International Nuclear Information System (INIS)

    Gupta, Mukul; Gupta, Ajay; Phase, D.M.; Chaudhari, S.M.; Dasannacharya, B.A.

    2002-01-01

    An ion-beam sputtering (IBS) system has been designed and developed for preparing thin films and multilayers of various elements, alloys and compounds. The ion source used is a 3 cm diameter, hot-cathode Kaufman type 1.5 kV ion source. The system has been successfully tested with the deposition of various materials, and the deposition parameters were optimised for achieving good quality of thin films and multilayers. A systematic illustration of the versatility of the system to produce a variety of structures is done by depositing thin film of pure iron, an alloy film of Fe-Zr, a compound thin film of FeN, a multilayer of Fe-Ag and an isotopic multilayer of 57 FeZr/FeZr. Microstructural measurements on these films using X-ray and neutron reflectivity, atomic force microscopy (AFM), and X-ray diffraction are presented and discussed to reveal the quality of the microstructures obtained with the system. It is found that in general, the surface roughnesses of the film deposited by IBS are significantly smaller as compared to those for films deposited by e-beam evaporation. Further, the grain size of the IBS crystalline films is significantly refined as compared to the films deposited by e-beam evaporation. Grain refinement may be one of the reasons for reduced surface roughness. In the case of amorphous films, the roughness of the films does not increase appreciably beyond that of the substrate even after depositing thicknesses of several hundred angstroms

  13. Measurement of incident molecular temperature in the formation of organic thin films

    Science.gov (United States)

    Abe, Takahiro; Matsubara, Ryosuke; Hayakawa, Munetaka; Shimoyama, Akifumi; Tanaka, Takaaki; Tsuji, Akira; Takahashi, Yoshikazu; Kubono, Atsushi

    2018-03-01

    To investigate the effects of incident molecular temperature on organic-thin-film growth by vacuum evaporation, quantitative analysis of molecular temperature is required. In this study, we propose a method of determining molecular temperature based on the heat exchange between a platinum filament and molecular vapor. Molecular temperature is estimated from filament temperature, which remains unchanged even under molecular vapor supply. The results indicate that our method has sufficient sensitivity to evaluate the molecular temperature under the typical growth rate used for fabrication of functional organic thin films.

  14. Pulsed laser deposition of high Tc superconducting thin films

    International Nuclear Information System (INIS)

    Singh, R.K.; Narayan, J.

    1990-01-01

    This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

  15. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    International Nuclear Information System (INIS)

    Predoi, D.; Ciobanu, C.S.; Radu, M.; Costache, M.; Dinischiotu, A.; Popescu, C.; Axente, E.; Mihailescu, I.N.; Gyorgy, E.

    2012-01-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: ► Hybrid, dextran-iron oxide nanoparticles and thin films. ► Laser immobilization. ► Biocompatibility of dextran-iron oxide nanoparticles.

  16. Microstructure and surface morphology of YSZ thin films deposited by e-beam technique

    International Nuclear Information System (INIS)

    Laukaitis, G.; Dudonis, J.; Milcius, D.

    2008-01-01

    In present study yttrium-stabilized zirconia (YSZ) thin films were deposited on optical quartz (amorphous SiO 2 ), porous Ni-YSZ and crystalline Alloy 600 (Fe-Ni-Cr) substrates using e-beam deposition technique and controlling technological parameters: substrate temperature and electron gun power which influence thin-film deposition mechanism. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin-film structure and surface morphology depend on these parameters. It was found that the crystallite size, roughness and growth mechanism of YSZ thin films are influenced by electron gun power. To clarify the experimental results, YSZ thin-film formation as well evolution of surface roughness at its initial growing stages were analyzed. The evolution of surface roughness could be explained by the processes of surface mobility of adatoms and coalescence of islands. The analysis of these experimental results explain that surface roughness dependence on substrate temperature and electron gun power non-monotonous which could result from diffusivity of adatoms and the amount of atomic clusters in the gas stream of evaporated material

  17. Concentration of remote-handled, transuranic, sodium nitrate-based sludge using agitated thin-film evaporators

    International Nuclear Information System (INIS)

    Walker, J.F. Jr.; Youngblood, E.L.; Berry, J.B.; Pen, Ben-Li

    1991-01-01

    The Waste Handling and Packaging Plant (WHPP) is being designed at Oak Ridge National Laboratory (ORNL) to prepared transuranic waste for final disposal. Once operational, this facility will process, package, and certify remote-handled transuranic waste for ultimate shipment and disposal at the Waste Isolation Pilot Plant (WIPP) in Carlsbad, New Mexico. One of the wastes that will be handled at WHIPP is the transuranic sludge currently stored at ORNL in eight 50,000-gal underground tanks. The use of an Agitated Thin-Film Evaporator (ATFE) for concentration of this waste is being investigated. Tests have shown that the ATFE can be used to produce a thick slurry, a powder, or a fused salt. A computer model developed at the Savannah River Plant (SRP) to simulate the operation of ATFE's on their waste is being modified for use on the ORNL transuranic sludge. This paper summarizes the results of the test with the ATFEs to date, discusses the changes in the SRP model necessary to use this model with the ORNL waste, and compares the results of the model with the actual data taken from the operation of ATFEs at vendors' test facilities. 8 refs., 1 fig., 3 tabs

  18. Production and investigation of galvanomagnetic properties of indium antimonide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sukhanov, S; Allaberenov, O; Annaberdyev, R; Mukhametniyazova, A B; Tudzhanova, I N [AN Tadzhikskoj SSR, Khorog. Pamirskij Biologicheskij Inst.

    1978-01-01

    The method of thermal evaporation in vacuum from 1 to 3x10/sup 5/ Tor was used to obtain thin films of indium antimonide on dielectric and ferrite substrates. At dusting of films the substrates had the temperature about 570 K. The rate of film growth reached 1000 AxC/sup -1/. Based on the Hall measurements, the specific electrical conductivity, mobility and concentration of spare film carriers were determined. Their dependences on the temperature (77-400 K) and on the magnetic fields in the range of 0-6500 e were studied.

  19. Photoconductivity of thin organic films

    International Nuclear Information System (INIS)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-01-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C 60 ), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C 60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10 3 Ω m and 3 x 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10 8 Ω m in dark to 3.1 x 10 6 Ω m under the light.

  20. Thermoluminescent properties of LiF:NaF multilayers thin films

    International Nuclear Information System (INIS)

    Mauricio, Claudia Lucia P.; Mauricio, Marcos H.P.; Nunes, Raul A.

    1996-01-01

    LiF and NaF and LiF:NaF multilayer films were grown by the assisted physical deposition method of beam evaporation. All films were grown by the assisted physical deposition method of e-beam evaporation. All films were made with a deposition rate of 10 A/s on aluminium and stainless steel substrates. Both substrates were kept at room temperature, 150 deg C and 300 deg C. The films were irradiated with 10 Gy in a 60 Co source. The thermoluminescence (TL) glow curves are similar for both substrates, with only a small dislocation in temperature of about 10 deg C. This dislocation in temperature are supposed to be related with its different thermal conductivity. The TL glow curves of films grown on aluminium substrates are more intense. TL of LiF films are similar of the TL of LiF crystals. The TL glow curves of multilayer LiF:NaF films can not be explained as a simple superposition of the glow curves of individual LiF and NaF layers. Thin layers of NaF seems not change very much the glow peaks structure of LiF films. (author)

  1. Gettering of carbon dioxide by erbium thin films

    International Nuclear Information System (INIS)

    Mehrhoff, T.K.

    1980-01-01

    The interaction of carbon dioxide and erbium thin films is characterized at 300 to 900 0 C and 5 x 10 -7 torr. Temperature ramp experiments with thin erbium films indicated a significant reaction above 300 0 C, preceded by desorption of water vapor, hydrogen and nitrogen and/or carbon monoxide from the film surface. The sticking coefficients were plotted as a function of Langmuirs of carbon dioxide exposure. Between 400 and 600 0 C, the length of the exposure was found to be more important than the temperature of the exposure in determining the sticking coefficient. Some evolution of carbon monoxide was noted particularly in the 400 to 500 0 C region. An 80% conversion of carbon dioxide to carbon monoxide was measured at 500 0 C. The film pumping speeds were compared with published vapor pressure data for erbium. This comparison indicated that a significant portion of the pumping action observed at temperatures of 800 0 C and above was due to evaporation of erbium metal

  2. Optical properties of CuSe thin films - band gap determination

    Directory of Open Access Journals (Sweden)

    Petrović Milica

    2017-01-01

    Full Text Available Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III45003

  3. THIN FILM-BASED SENSOR FOR MOTOR VEHICLE EXHAUST GAS, NH3, AND CO DETECTION

    Directory of Open Access Journals (Sweden)

    S. Sujarwata

    2016-10-01

    Full Text Available A copper phthalocyanine (CuPc thin film based gas sensor with FET structure and channel length 100 μm has been prepared by VE method and lithography technique to detect NH3, motor cycle exhaust gases and CO. CuPc material layer was deposited on SiO2 by the vacuum evaporator (VE method at room temperature and pressure of 8 x10-4 Pa. The stages of manufacturing gas sensor were Si/SiO2 substrate blenching with ethanol in an ultrasonic cleaner, source, and drain electrodes deposition on the substrate by using a vacuum evaporator, thin film deposition between the source/drain and gate deposition. The sensor response times to NH3, motorcycle exhaust gases and CO were 75 s, 135 s, and 150, respectively. The recovery times were 90 s, 150 s and 225, respectively. It is concluded that the CuPc thin film-based gas sensor with FET structure is the best sensor to detect the NH3 gas.Sensor gas berbasis film tipis copper phthalocyanine (CuPc berstruktur FET dengan panjang channel 100 μm telah dibuatdengan metode VE dan teknik lithography untuk mendeteksi NH3 gas buang kendaraan bermotor dan CO. Lapisan bahan CuPc dideposisikan pada permukaan silikon dioksida (SiO2 dengan metode vacuum evaporator (VE pada temperatur ruang dengan tekanan 8 x10-4 Pa. Tahapan pembuatan sensor gas adalah pencucian substrat Si/SiO2 dengan etanol dalam ultrasonic cleaner, deposisi elektroda source dan drain di atas substrat dengan metode vacuum evaporator, deposisi film tipis diantara source/drain dan deposisi gate. Waktu tanggap sensor terhadap NH3, gas buang kendaraan bermotor dan CO berturut-turut adalah 75 s, 135 s,dan 150 s. Waktu pemulihan berturut-turut adalah 90 s, 150 s,dan 225 s. Disimpulkan bahwa sensor gas berstruktur FET berbasis film tipis CuPc merupakan sensor paling baik untuk mendeteksi adanya gas NH3.

  4. FABRICATION OF Cu-Al-Ni SHAPE MEMORY THIN FILM BY THERMAL EVOPRATION

    OpenAIRE

    Özkul, İskender; Canbay, Canan Aksu; Tekataş, Ayşe

    2017-01-01

    Among the functional, materials shape memory alloysare important because of their unique properties. So, these materials haveattracted more attention to be used in micro/nano electronic andelectromechanic systems. In this work, thermal evaporation method has been usedto produce CuAlNi shape memory alloy thin film. The produced CuAlNi thin filmhas been characterized and the presence of the martensite phase wasinvestigated and compared with the CuAlNi alloy sample. CuAlNi shape memoryalloy thin...

  5. Influence of composition on optical and dispersion parameters of thermally evaporated non-crystalline Cd{sub 50}S{sub 50−x}Se{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassanien, A.S., E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Dept., Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia); Akl, Alaa A. [Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

    2015-11-05

    Non-crystalline thin films of chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} system (30 ≤ x ≤ 50) were obtained by thermal evaporation technique onto a pre-cleaned glass substrate at a vacuum of 8.2 × 10{sup −4} Pa. The deposition rate and film thickness were kept constant at about 8 nm/s and 200 nm, respectively. Amorphous/crystalline nature and chemical composition of films have been checked using X-ray diffraction and energy dispersive X-ray spectroscopy (EDX). Optical properties of thin films were investigated and studied using the corrected transmittance, T(λ) and corrected reflectance, R(λ) measurements. Obtained data reveal that, the indirect optical energy gap (E{sub g}) was decreased from 2.21 to 1.57 eV. On the contrary, Urbach energy (band tail width), E{sub U} was found to be increased from 0.29 to 0.45 eV. This behavior is believed to be associated with the increase of Se-content instead of S-content in the thin films of Cd{sub 50}S{sub 50−x}Se{sub x} system. Chemical bond approach model, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. Optical density, skin depth, extinction coefficient, refractive index and optical conductivity of chalcogenide CdSSe thin films were discussed as functions of Se-content. Using Wemple-DiDomenico single oscillator model, the refractive index dispersion and energy parameters and their dependence on Se content were studied. - Highlights: • Amorphous thin films of thickness 200 nm of Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) have prepared. • Optical properties, indirect optical energy gap and band tail width were studied. • Chemical bond approach, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. • New data of dispersion refractive index parameters were investigated and discussed.

  6. Fabrication and characterization of 6,13-bis(triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, Khairul Anuar; Rusnan, Fara Naila; Seria, Dzulfahmi Mohd Husin; Saad, Ismail; Alias, Afishah [Nano Engineering & Materials (NEMs) Research Group, Faculty of Engineering Universiti Malaysia Sabah, Kota Kinabalu 88400 Sabah (Malaysia); Katsuhiro, Uesugi; Hisashi, Fukuda [Division of Engineering for Composite Functions, Muroran Institute of Technology 27-1 Mizumoto, Muroran 050-8585 Hokkaido (Japan)

    2015-08-28

    Investigation on the physical characterization and comparison of organic thin film based on a soluble 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene is reported. Oriented thin-films of pentacene have been successfully deposited by flow-coating method, in which the chloroform solution is sandwiched between a transparent substrate and a slide glass, followed by slow-drawing of the substrate with respect to the slide glass. Molecular orientation of flow-coated TIPS-pentacene is comparable to that of the thermal-evaporated pentacene thin film by the X-ray diffraction (XRD) results. XRD results showed that the morphology of flow-coated soluble pentacene is similar to that of the thermal-evaporated pentacene thin films in series of (00l) diffraction peaks where the (001) diffraction peaks are strongest in the nominally out-of-plane intensity and interplanar spacing located at approximately 2θ = 5.33° (d-spacing, d{sub 001} = 16 Å). Following that, ITO/p-TIPS-pentacene/n-ZnO/Au vertical diode was fabricated. The diode exhibited almost linear characteristics at low voltage with nonlinear characteristics at higher voltage which similar to a pn junction behavior. The results indicated that the TIPS-pentacene semiconductor active thin films can be used as a hole injection layer for fabrication of a vertical organic transistor.

  7. Electron-gun Evaporation of Cu and In thin films as Precursors for CuInSe{sub 2} Formation; Evaporacion mediante Canon de Electrones de Laminas Delgadas de Cu e In como Precursores para la Obtencion de CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R; Guillen, C

    2001-07-01

    In the present investigation CuInSe{sub 2} is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm''2, and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs.

  8. Electron-gun Evaporation of Cu and In thin films as Precursors for CuInSe{sub 2} Formation; Evaporacion mediante Canon de Electrones de Laminas Delgadas de Cu e In como Precursores para la Obtencion de CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R.; Guillen, C.

    2001-07-01

    In the present investigation CuInSe{sub 2} is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm''2, and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs.

  9. Polycrystalline silicon thin-film solar cells on glass

    Energy Technology Data Exchange (ETDEWEB)

    Gall, S.; Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Lee, K.Y.; Rau, B.; Ruske, F.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH (formerly Hahn-Meitner-Institut Berlin GmbH), Department Silicon Photovoltaics (SE1), Kekulestr. 5, D-12489 Berlin (Germany)

    2009-06-15

    Poly-Si thin-film solar cells on glass feature the potential to reach single-junction efficiencies of 15% or even higher at low costs. In this paper innovative approaches are discussed, which could lead to substantial efficiency improvements and significant cost reductions: (i) preparation of large-grained poly-Si films using the 'seed layer concept' targeting at high material quality, (ii) utilization of ZnO:Al-coated glass enabling simple contacting and light-trapping schemes, (iii) utilization of high-rate electron-beam evaporation for the absorber deposition offering a high potential for cost reduction. (author)

  10. Enhanced Absorption in Organic Thin-Films from Imprinted Concave Nanostructures

    Directory of Open Access Journals (Sweden)

    Arkadiusz Jarosław GOSZCZAK

    2017-02-01

    Full Text Available In this work, a rapid, replicable method for imprinting concave nanostructures to be used as functional light-trapping nanostructures in organic thin-films is presented. Porous anodic alumina templates were fabricated both by anodization of thick Al foils and by anodization of submicrometer thin Al films evaporated via e-beam evaporation on Si substrates. The template formation leads to natural patterning of the underlying Al layers that are used as rigid masters for stamp fabrication, after selective etching of the porous anodic alumina. PDMS stamps were made after replicating the Al concave patterns and used for imprinting of spin coated photoresist on glass substrates. We have investigated semi-periodic and aperiodic imprinted large concave patterns fabricated from rigid masters after anodization of Al in H3PO4. We show that metal covered imprinted concaves show enhancement in absorption that is attributed to field enhancement and diffuse scattering, leading to efficient light trapping for a selected active layer material (P3HT:PCBM.DOI: http://dx.doi.org/10.5755/j01.ms.23.1.14188

  11. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Predoi, D.; Ciobanu, C.S. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Radu, M.; Costache, M.; Dinischiotu, A. [Molecular Biology Center, University of Bucharest, 91-95 Splaiul Independentei, 76201, Bucharest 5 (Romania); Popescu, C.; Axente, E.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Gyorgy, E., E-mail: egyorgy@cin2.es [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Consejo Superior de Investigaciones Cientificas, Centre d' Investigacions en Nanociencia i Nanotecnologia (CSIC-CIN2), Campus UAB, 08193 Bellaterra (Spain)

    2012-02-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: Black-Right-Pointing-Pointer Hybrid, dextran-iron oxide nanoparticles and thin films. Black-Right-Pointing-Pointer Laser immobilization. Black-Right-Pointing-Pointer Biocompatibility of dextran-iron oxide nanoparticles.

  12. Observation of feature ripening inversion effect at the percolation threshold for the growth of thin silver films

    Energy Technology Data Exchange (ETDEWEB)

    Nehm, Frederik, E-mail: frederik.nehm@iapp.de; Schubert, Sylvio; Müller-Meskamp, Lars; Leo, Karl

    2014-04-01

    The growth behavior of thin silver films on organic layers is investigated during deposition by means of simultaneous in-situ monitoring of sheet resistance and transmittance. Thermally evaporated films up to 11 nm show a distinct percolation behavior with strong resistance drop at the percolation thickness. Additionally, evaporations are divided into a sequence of one nanometer steps. In the deposition breaks, the films exhibit a ripening effect with an inversion at the percolation thickness, by changing from an increasing to decreasing sheet resistance over time. Scanning electron micrographs suggest same ripening mechanisms for islands below the percolation thickness as for holes above. - Highlights: • Fundamental understanding of metal thin film growth is presented. • Optical and electrical in-situ measurements used for optimizing transparent electrodes • Stepwise Ag deposition reveals extraordinary ripening effects. • Feature ripening inversion is discovered at the percolation threshold.

  13. Observation of feature ripening inversion effect at the percolation threshold for the growth of thin silver films

    International Nuclear Information System (INIS)

    Nehm, Frederik; Schubert, Sylvio; Müller-Meskamp, Lars; Leo, Karl

    2014-01-01

    The growth behavior of thin silver films on organic layers is investigated during deposition by means of simultaneous in-situ monitoring of sheet resistance and transmittance. Thermally evaporated films up to 11 nm show a distinct percolation behavior with strong resistance drop at the percolation thickness. Additionally, evaporations are divided into a sequence of one nanometer steps. In the deposition breaks, the films exhibit a ripening effect with an inversion at the percolation thickness, by changing from an increasing to decreasing sheet resistance over time. Scanning electron micrographs suggest same ripening mechanisms for islands below the percolation thickness as for holes above. - Highlights: • Fundamental understanding of metal thin film growth is presented. • Optical and electrical in-situ measurements used for optimizing transparent electrodes • Stepwise Ag deposition reveals extraordinary ripening effects. • Feature ripening inversion is discovered at the percolation threshold

  14. Solid thin film materials for use in thin film charge-coupled devices

    International Nuclear Information System (INIS)

    Lynch, S.J.

    1983-01-01

    Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

  15. Preparation of SnSe thin films by encapsulated selenization

    International Nuclear Information System (INIS)

    Sabar D. Hutagalung; Samsudi Sakrani; Yussof Wahab

    1994-01-01

    Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system

  16. Thin-film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  17. Effect of preparation conditions on the properties of Cu3BiS3 thin films grown by a two - step process

    Science.gov (United States)

    Mesa, F.; Gordillo, G.

    2009-05-01

    Cu3BiS3 thin films were prepared on soda-lime glass substrates by co-evaporation of the precursors in a two-step process; for that, the metallic precursors were evaporated from a tungsten boat in presence of elemental sulfur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, atomic force microscopy AFM and x-ray diffraction (XRD) measurements to investigate the effect of the growth conditions on the optical, morphological and structural properties. The results revealed that, independently of the deposition conditions, the films grow only in the orthorhombic Cu3BiS3 phase. It was also found that the Cu3BiS3 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.41 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

  18. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  19. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

    Science.gov (United States)

    Albin, David S.; Noufi, Rommel

    2015-06-09

    Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

  20. The secondary electron yield of TiZr and TiZrV non evaporable getter thin film coatings

    CERN Document Server

    Scheuerlein, C; Hilleret, Noël; Taborelli, M

    2001-01-01

    The secondary electron yield (SEY) of two different non evaporable getter (NEG) samples has been measured 'as received' and after thermal treatment. The investigated NEGs are TiZr and TiZrV thin film coatings of 1 mm thickness, which are sputter deposited onto copper substrates. The maximum SEY dmax of the air exposed TiZr and TiZrV coating decreases from above 2.0 to below 1.1 during a 2 hour heat treatment at 250 °C and 200 °C, respectively. Saturating an activated TiZrV surface under vacuum with the gases typically present in ultra high vacuum systems increases dmax by about 0.1. Changes in elemental surface composition during the applied heat treatments were monitored by Auger electron spectroscopy (AES). After activation carbon, oxygen and chlorine were detected on the NEG surfaces. The potential of AES for detecting the surface modifications which cause the reduction of SE emission during the applied heat treatments is critically discussed.

  1. Effect of substrate temperatures on the optical properties of evaporated Sc2O3 thin films

    International Nuclear Information System (INIS)

    Liu Guanghui; Jin Yunxia; He Hongbo; Fan Zhengxiu

    2010-01-01

    Scandium oxide (Sc 2 O 3 ) films were deposited by electron beam evaporation with substrate temperatures varying from 50 to 350 o C. X-ray diffraction, scanning electron microscopy, spectrometer, and optical profilograph were employed to investigate the structural and optical properties of the films. The refractive index and extinction coefficient were calculated from the transmittance and reflectance spectra, and then the energy band gaps were deduced and discussed. Laser induced damage threshold of the films were also characterized. Optical and structural properties of Sc 2 O 3 films were found to be sensitive to substrate temperature.

  2. Studies on dielectric properties, opto-electrical parameters and electronic polarizability of thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassanien, Ahmed Saeed, E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Department, Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

    2016-06-25

    The objective of this work is to study the influence of the addition of more Se on dielectric properties, opto-electrical parameters and electronic polarizability of amorphous chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} thin films (30 ≤ x ≤ 50 at%). Thin films of thickness 200 nm were synthesized by vacuum deposition at ≈8.2 × 10{sup −4} Pa. Both refractive index and extinction coefficient were used to obtain all the studied parameters. The high frequency dielectric constant, real and imaginary parts of dielectric constant were discussed. Drude theory was applied to investigate opto-electrical parameters, like optical carrier concentration, optical mobility and optical resistivity. Moreover, other parameters were investigated and studied, e.g. Drude parameters, volume and surface energy loss functions, dielectric loss factor, dielectric relaxation time, complex optical conductivity and electronic polarizability as well as optical electronegativity and third-order nonlinear optical susceptibility. Values of electronic polarizability and nonlinear optical susceptibility were found to be decreased while optical electronegativity increased as Se-content was increased. Increment of Se-content in amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films has also led to minimize the energy losses when electromagnetic waves propagate through films as well as optical conductivity and the speed of light increased. The other studied properties and parameters of Cd{sub 50}S{sub 50−x}Se{sub x} films were found to be strongly dependent upon Se-content. - Highlights: • Thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) thin films were deposited. • Refractive index and absorption index were used to determine almost all properties. • Dielectric properties, Drude parameters and electronic polarizability were studied. • Addition of more Se to CdSSe matrix led to improve the opto-electrical properties. • New data were obtained and

  3. Falling film evaporators: organic solvent regeneration in nuclear fuel reprocessing

    International Nuclear Information System (INIS)

    Garcin, I.

    1989-01-01

    The aim of this work was to improve knowledge about working of falling film evaporators used in nuclear fuel reprocessing plants for organic solvent regeneration. The first part deals with a non evaporation film. An original film thickness measuring technique was used; infrared thermography. It gave indications on hydrodynamics and wave amplitude and pointed out thermocapillary forces to be the cause of bad wetting of the heated wall. By another way we showed that a small slit spacing on the film distributor, an enhanced surface roughness and an important liquid flow rate favour a better wetting. The second part deals with evaporation of a binary solvent mixture. Experiments in an industrial evaporator corroborated the fact that it is essential for the efficiency of the apparatus to work at high flow rates. We propose an over-simple model which can be used to estimate performances of co-current falling film evaporators of the process [fr

  4. Thin film evolution equations from (evaporating) dewetting liquid layers to epitaxial growth

    International Nuclear Information System (INIS)

    Thiele, U

    2010-01-01

    In the present contribution we review basic mathematical results for three physical systems involving self-organizing solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting, evaporation/condensation or epitaxial growth, respectively. We highlight similarities and differences of the three systems based on the observation that in certain limits all of them may be described using models of similar form, i.e. time evolution equations for the film thickness profile. Those equations represent gradient dynamics characterized by mobility functions and an underlying energy functional. Two basic steps of mathematical analysis are used to compare the different systems. First, we discuss the linear stability of homogeneous steady states, i.e. flat films, and second the systematics of non-trivial steady states, i.e. drop/hole states for dewetting films and quantum-dot states in epitaxial growth, respectively. Our aim is to illustrate that the underlying solution structure might be very complex as in the case of epitaxial growth but can be better understood when comparing the much simpler results for the dewetting liquid film. We furthermore show that the numerical continuation techniques employed can shed some light on this structure in a more convenient way than time-stepping methods. Finally we discuss that the usage of the employed general formulation does not only relate seemingly unrelated physical systems mathematically, but does allow as well for discussing model extensions in a more unified way.

  5. A Method for Suppressing Superconductivity of Thin Films

    Science.gov (United States)

    Suppula, Tarmo; Pekola, Jukka; Kauppinen, Juha

    2003-03-01

    We have developed a method for suppressing superconductivity of thin films. Thin stripes of cobalt grown by e-gun evaporation and patterned by e-beam lithography were placed in the vicinity of aluminium thin film structures. The cobalt stripes were magnetized at 4.2 K with a superconducting coil and the remanence suppressed superconductivity of the Al stripe at temperatures down to 50 mK at least. The magnetization remained in thermal cycling and in a longer storage at room temperature. Motivation for this work is the Coulomb Blockade Thermometer(CBT)^1 which has to be in a normal state to operate. The CBT sensor contains aluminium which is superconducting at temperatures below 1.4 K. An external magnetic field is not always available or acceptable in cryostats. A small grain of permanent magnet mounted to the sensor is another solution, but suspicious if the sensor is put in strong magnetic fields or if "zero field" environment is required. We have shown that suitably patterned and magnetized Co stripes in the vicinity of tunnel junctions of the CBT can solve this problem. The amount of magnetic material in the sensor, as well as the stray field, is very small. This technique may be useful in other low temperature thin film devices also. 1) Product of Nanoway Ltd.

  6. Investigation of AgInS2 thin films grown by coevaporation

    Science.gov (United States)

    Arredondo, C. A.; Clavijo, J.; Gordillo, G.

    2009-05-01

    AgInS2 thin films were grown on soda-lime glass substrates by co-evaporation of the precursors in a two-step process. X-ray diffraction (XRD) measurements indicated that these compounds grow in different phases and with different crystalline structure depending upon the deposition conditions. However, through a parameter study, conditions were found to grow thin films containing only the AgInS2 phase with chalcopyrite type structure. In samples containing a mixture of several phases, the contribution in percentage terms of each phase to the whole compound was estimated with the help of the PowderCell simulation package. It was also found that the AgInS2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.95 eV, indicating that this compound has good properties to perform as absorbent layer in thin film tandem solar cells. The effect of the deposition conditions on the optical and morphological properties was also investigated through spectral transmitance and atomic force microscopy (AFM) measurements.

  7. Putting evaporators to work: wiped film evaporator for high level wastes

    International Nuclear Information System (INIS)

    Dierks, R.D.; Bonner, W.F.

    1976-01-01

    At Battelle, Pacific Northwest Laboratories, a pilot scale, wiped film evaporator was tested for concentrating high level liquid wastes from Purex-type nuclear fuel recovery processes. The concentrates produced up to 60 wt-percent total solids; and the simplicity of operation and design of the evaporator gave promise for low maintenance and high reliability

  8. Chemical and Electronic Structure Studies of Refractory and Dielectric Thin Films.

    Science.gov (United States)

    Corneille, Jason Stephen

    This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was accomplished using a broad array of surface analytical techniques. These model studies describe the relationship between the preparative processes and the stoichiometry, structure and electronic properties of the film products. From these efforts, the optimal deposition conditions for the production of high quality films have been established. The thin film oxides synthesized and studied here include magnesium oxide, silicon oxide and iron oxide. These oxides were synthesized on a refractory substrate using both post oxidation of thin films as well as reactive vapor deposition of the metals in the presence of an oxygen background. Comparisons and contrasts are presented for the various systems. Metallic magnesium films were grown and characterized as a preliminary study to the synthesis of magnesium oxide. Magnesium oxide (MgO(100)) was synthesized on Mo(100) by evaporating magnesium at a rate of one monolayer per minute in an oxygen background pressure of 1 times 10 ^{-6} Torr at room temperature. The resulting film was found to exhibit spectroscopic characteristics quite similar to those observed for bulk MgO. The acid/base characteristics of the films were studied using carbon monoxide, water and methanol as probe molecules. The film was found to exhibit essentially the same chemical properties as found in analogous powdered catalysts. Silicon dioxide was synthesized by evaporating silicon onto Mo(100) in an oxygen ambient. It is shown that the silicon oxide prepared at room temperature with a silicon deposition rate of {~ }{1.2}A/min and an oxygen pressure of 2 times 10^{ -8} Torr, consisted of predominantly silicon dioxide with a small fraction of suboxides. Annealing to

  9. Thin film electroluminescent cells on the basis of Ce-doped CaGa2S4 and SrGa2S4 prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Gambarov, E.; Bayramov, A.; Kato, A.; Iida, S.

    2006-01-01

    Ce-doped CaGa 2 S 4 and SrGa 2 S 4 thin film electroluminescent (TFEL) devices were prepared for the first time on the basis of films deposited by flash evaporation method. Significant crystallization, stoichiometry improvement of the films and increase of photoluminescence intensity were found after annealing in H 2 S and O 2 gas stream. EL spectra of the cells exhibited the characteristic double-band emission similar to that seen for Ce 3+ activated CaGa 2 S 4 and SrGa 2 S 4 films under photon excitation. Applied voltage and frequency dependences of the electroluminescence were studied. Low voltage operation as low as 20 V was observed for these cells. Luminance of about 4 cd/m 2 at 100 V operating voltage with 2.5 kHz frequency was achieved for the TFEL cell with films annealed in O 2 gas stream. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Measurement of positron reemission from thin single-crystal W(100) films

    International Nuclear Information System (INIS)

    Chen, D.M.; Lynn, K.G.; Pareja, R.; Nielsen, B.

    1985-01-01

    Epitaxial thin single-crystal (100) tungsten films 1000, 2500, and 5000 A thick have been fabricated by high-vacuum electron-beam evaporation. These films were subsequently used as thin-film moderators for the study of the positron-transmission-reemission process with a variable-energy (0--80 keV) monoenergetic positron beam in an ultrahigh-vacuum system. The films were shown to be routinely cleanable by heating first in oxygen (10 -6 Torr) and then in vacuum (10 -9 Torr). Transmission and back reemission of slow positrons from these surfaces was observed. The positron work function, phi/sub +/ has been determined to be approx. =3.0 eV ( +- 0.3 eV). The transmission slow positrons were emitted in a narrow cone with a full width at half maximum of approx. =30 0 consistent with the angular distribution of back-reemission positrons. The reemitted yields as a function of incident positron energy were found to be very different between forward reemission and back reemission. The maximum forward-reemission yields were 18% for 1000-A-thick W film and 12% for 2500-A-thick W film at 5 and 10 keV optimum incident positron energies, respectively. These results show that one can use thin single-crystal tungsten films as positron moderators or remoderators

  11. Nanostructure and bonding of zirconium diboride thin films studied by X-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Stewart, David M., E-mail: david.stewart@maine.edu; Meulenberg, Robert W.; Lad, Robert J., E-mail: rjlad@maine.edu

    2015-12-01

    Zirconium diboride (ZrB{sub 2}) is an important ceramic due to its extremely high melting temperature of 3245 °C and metallic electrical conductivity, properties that make it an ideal candidate thin film electrode material for high temperature electronics. In this report, thin films of varying B:Zr ratio ranging from 3–0.67 have been grown by e-beam evaporation from elemental sources. X-ray absorption spectra at the Zr K-edge were measured before and after annealing in ultra-high vacuum for 9 h at 1000 °C. Films with compositions near ZrB{sub 2} stoichiometry show X-ray absorption fine structure that can be well modeled by crystalline ZrB{sub 2} with a small portion of a coexisting tetragonal zirconia (t-ZrO{sub 2}) phase. Films far from stoichiometry show substantial disorder beyond the nearest-neighbor distances, and after vacuum annealing exhibit high levels of oxidation. Contributions to the X-ray absorption fine structure from a pure Zr phase are very small compared to ZrB{sub 2} and t-ZrO{sub 2} phases. The fact that nearly stoichiometric (3 < B:Zr < 1.6) as-deposited amorphous films form the same crystalline ZrB{sub 2} nanostructure after annealing is particularly encouraging for high temperature thin film electronics applications, because it would allow the production of highly stable electrodes with e-beam evaporation without the need of any high temperature heating during film growth. - Highlights: • Zr–B thin films of different compositions were grown at low substrate temperatures. • EXAFS analysis indicates a ZrB{sub 2} crystal structure after vacuum annealing. • The coexistence of crystalline and amorphous Zr–B phases is also observed. • Films with excess Zr readily form t-ZrO{sub 2} during deposition, which coexists with ZrB{sub 2}. • Low temperature synthesis routes are important for technological applications.

  12. Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

    KAUST Repository

    Yandjah, L.; Bechiri, L.; Benabdeslem, M.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Ziani, Ahmed

    2018-01-01

    Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X

  13. Investigation of sensitivity and selectivity of ZnO thin film to volatile organic compounds

    Science.gov (United States)

    Teimoori, F.; Khojier, K.; Dehnavi, N. Z.

    2017-06-01

    This research addresses a detailed study on the sensitivity and selectivity of ZnO thin film to volatile organic compound (VOC) vapors that can be used for the development of VOC sensors. The ZnO thin film of 100 nm thickness was prepared by post-annealing of e-beam evaporated Zn thin film. The sample was structurally, morphologically, and chemically characterized by X-ray diffraction and field emission scanning electron microscopy analyses. The sensitivity, selectivity, and detection limit of the sample were tested with respect to a wide range of common VOC vapors, including acetone, formaldehyde, acetic acid, formic acid, acetylene, toluene, benzene, ethanol, methanol, and isopropanol in the temperature range of 200-400 °C. The results show that the best sensitivity and detection limit of the sample are related to acetone vapor in the studied temperature range. The ZnO thin film-based acetone sensor also shows a good reproducibility and stability at the operating temperature of 280 °C.

  14. Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

    Science.gov (United States)

    Tiwari, Kunal J.; Vinod, Vijay; Subrahmanyam, A.; Malar, P.

    2017-10-01

    Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cm-1 and a band gap value ∼1.18 eV that is closer to the reported band gap for CuSbSe2 compound.

  15. Femtosecond laser surface structuring of molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kotsedi, L., E-mail: Kotsedi@tlabs.ac.za [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); Mthunzi, P. [Council for Scientific and Industrial Research (CSIR), Biophotonics Lab: National Laser Centre Pretoria, 0001 (South Africa); Nuru, Z.Y. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); Eaton, S.M. [Physics Department, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano, Itala (Italy); Sechoghela, P.; Mongwaketsi, N. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); Ramponi, R. [Institute for Photonics and Nanotechnologies (IFN)–CNR, Piazza Leanardo Da Vinci, 32, 20133 Milano (Italy); Maaza, M. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa)

    2015-10-30

    Highlights: • Color change of the molybdenum thin film from shinny to violet–yellowish color after laser irradiation at various laser powers. • Formation of the molybdenum dioxide coating after laser exposure, as confirmed by the X-ray diffraction spectrometry. • Selective solar absorbing nature of the laser exposed films. • Study of the binding energies is presented in this contribution using the XPS spectrometry. - Abstract: This contribution reports on the femtosecond surface structuring of molybdenum thin coatings deposited by electron beam evaporation onto Corning glass substrates. The 1-D type periodic grating lines created by such an ablation showed that the widths of the shallow grooves followed a logarithmic dependence with the laser energy incident on the molybdenum film. The electronic valence “x” of the created oxide surface layer MoO{sub x} was found to be incident laser power dependent via Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy and X-ray diffraction investigations. Such a photo-induced MoO{sub x}–Mo nanocomposite exhibited effective selective solar absorption in the UV–vis–IR spectral range.

  16. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Ali, N., E-mail: nisar.ali@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Department of Physics, Govt. Post Graduate Jehanzeb College Saidu Sharif, Swat, 19200 (Pakistan); Hussain, A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Wan Shamsuri, W.N. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Fu, Y.Q., E-mail: richard.fu@northumbria.ac.uk [Department of Physics and Electrical Engineering, Faculty of Engineering & Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST (United Kingdom)

    2016-12-30

    Highlights: • A new and novel material for solar cell applications is demonstrated as a replacement for toxic and expansive compounds. • The materials used in this compound are abundant and low cost. • Compound exhibit unusual optical and electrical properties. • The band gap was found to be comparable with that of GaAs. - Abstract: Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs – one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  17. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  18. Influence of post-deposition annealing on structural, morphological and optical properties of copper (II) acetylacetonate thin films.

    Science.gov (United States)

    Abdel-Khalek, H; El-Samahi, M I; El-Mahalawy, Ahmed M

    2018-05-21

    In this study, the effect of thermal annealing under vacuum conditions on structural, morphological and optical properties of thermally evaporated copper (II) acetylacetonate, cu(acac) 2 , thin films were investigated. The copper (II) acetylacetonate thin films were deposited using thermal evaporation technique at vacuum pressure ~1 × 10 -5  mbar. The deposited films were thermally annealed at 323, 373, 423, and 473 K for 2 h in vacuum. The thermogravimetric analysis of cu(acac) 2 powder indicated a thermal stability of cu(acac) 2 up to 423 K. The effects of thermal annealing on the structural properties of cu(acac) 2 were evaluated employing X-ray diffraction method and the analysis showed a polycrystalline nature of the as-deposited and annealed films with a preferred orientation in [1¯01] direction. Fourier transformation infrared (FTIR) technique was used to negate the decomposition of copper (II) acetylacetonate during preparation or/and annealing up to 423 K. The surface morphology of the prepared films was characterized by means of field emission scanning electron microscopy (FESEM). A significant enhancement of the morphological properties of cu(acac) 2 thin films was obtained till the annealing temperature reaches 423 K. The variation of optical constants that estimated from spectrophotometric measurements of the prepared thin films was investigated as a function of annealing temperature. The annealing process presented significantly impacted the nonlinear optical properties such as third-order optical susceptibility χ (3) and nonlinear refractive index n 2 of cu(acac) 2 thin films. Copyright © 2018 Elsevier B.V. All rights reserved.

  19. Novel Evaporation Process for Deposition of Kesterite Thin Films Synthesized by Solvothermal Method

    Directory of Open Access Journals (Sweden)

    J. A. Estrada-Ayub

    2017-01-01

    Full Text Available Kesterite, a quaternary compound of Cu2ZnSnS4, is a promising option as a material absorber to reduce the cost of photovoltaic solar cells. The solvothermal method is a way to synthesize nanoparticles of this material. In this work, once synthesized, particles were deposited on a substrate through evaporation, and their morphological, structural, and optical properties were studied. Results show that changes of precursor ratios during solvothermal synthesis result in a modification of particle morphology but not on its size. The deposition of already synthesized kesterite through evaporation preserves kesterite structure and permits the formation of a homogenous film on a substrate. Optical reflectance and transmittance measurements allowed estimating the band-gap energy between 1.41 and 1.46 eV for representative samples, which is near the optimum for the absorber material.

  20. Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    Benny Joseph

    2008-01-01

    Full Text Available Thin films of Cobalt Phthalocyanine (CoPc are fabricated at a base pressure of 10-5 m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM, which show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are needle like, which are interconnected at high substrate temperatures. The optical band gap energy is almost same on substrate temperature variation. Trap energy levels are also observed for these films.

  1. Calixarene Langmuir-Blodgett Thin Films For Volatile Organic Compounds

    International Nuclear Information System (INIS)

    Capan, R.

    2010-01-01

    Volatile Organic Compounds (VOC's) such as benzene, toluene, chloroform are chemicals that evaporate easily at room temperature and create many health effects on young children, elderly and a person with heightened sensitivity to chemicals. Concentrations of many VOC's are consistently higher indoors (up to ten times higher) than outdoors because many household products (for example paints, varnishes, many cleaning, disinfecting, cosmetic, degreasing, hobby products etc.) contains VOC's. Some effects of VOC's for human beings can be followed as the eye, nose, and throat irritations; headaches, loss of coordination, nausea; damage to liver, kidneys, and central nervous system. These are big incentives for the development of portable, user-friendly VOC's sensors and for the investigation of the sensing properties of new materials to be prepared as a thin film sensing element. Langmuir-Blodgett (LB) ultra-thin film technique allows us to produce monolayer or multilayer organic thin films that can be used as chemical sensing elements.In this work, materials known as the calix[n]arene are investigated for the production of sensing material against several VOC's such as the chloroform, benzene, ethylbenzene and toluene by using LB thin film techniques. UV-visible, Quartz Crystal Microbalance (QCM) system and Surface Plasmon Resonance (SPR) measurement techniques are used to check the quality of the deposition process onto a solid substrate. Surface morphology and sensing properties of the final sensing layers are then studied by Atomic Force Microscopy (AFM) and SPR techniques. Our results indicated that selected calixarene materials are sensitive enough and quite suitable to fabricate a highly ordered, reproducible and uniform LB film that can be used as a very thin sensing layer against VOC's.

  2. Structural and optical investigation of Te-based chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Rita, E-mail: reetasharma2012@gmail.com; Sharma, Shaveta; Thangaraj, R.; Mian, M. [Semiconductors Laboratory, Department of Physics, GND University, Amritsar (India); Chander, Ravi [Applied Science Deptt. Govt. Polytechnic College Amritsar (India); Kumar, Praveen [Department of Physics, DAV University, Sarmastipur, Jalandhar-144012 (India)

    2015-05-15

    We report the structural and optical properties of thermally evaporated Bi{sub 2}Te{sub 3}, In{sub 2}Te{sub 3} and InBiTe{sub 3} films by using X-ray diffraction, optical and Raman Spectroscopy techniques. The as-prepared thin films were found to be Semi-crystalline by X-ray diffraction. Particle Size and Strain has been calculated from XRD data. The optical constants, film thickness, refractive index and optical band gap (E{sub g}) has been reported for In{sub 2}Te{sub 3}, InBiTe{sub 3} films. Raman Spectroscopy was performed to investigate the effect of Bi, In, on lattice vibration and chemical bonding in Te based chalcogenide glassy alloys.

  3. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  4. The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

    Science.gov (United States)

    Steel, G. G.

    1970-01-01

    Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

  5. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-01-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  6. The Investigation of E-beam Deposited Titanium Dioxide and Calcium Titanate Thin Films

    Directory of Open Access Journals (Sweden)

    Kristina BOČKUTĖ

    2013-09-01

    Full Text Available Thin titanium dioxide and calcium titanate films were deposited using electron beam evaporation technique. The substrate temperature during the deposition was changed from room temperature to 600 °C to test its influence on TiO2 film formation and optical properties. The properties of CaTiO3 were investigated also. For the evaluation of the structural properties the formed thin ceramic films were studied by X-ray diffraction (XRD, energy dispersive spectrometry (EDS, scanning electron microscopy (SEM and atomic force microscopy (AFM. Optical properties of thin TiO2 ceramics were investigated using optical spectroscope and the experimental data were collected in the ultraviolet-visible and near-infrared ranges with a step width of 1 nm. Electrical properties were investigated by impedance spectroscopy.It was found that substrate temperature has influence on the formed thin films density. The density increased when the substrate temperature increased. Substrate temperature had influence on the crystallographic, structural and optical properties also. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.1805

  7. Optical and infrared spectroscopic studies of chemical sensing by copper phthalocyanine thin films

    International Nuclear Information System (INIS)

    Singh, Sukhwinder; Tripathi, S.K.; Saini, G.S.S.

    2008-01-01

    Thin films of copper phthalocyanine have been deposited on KBr and glass substrates by thermal evaporation method and characterized by the X-ray diffraction and optical absorption techniques. The observed X-ray pattern suggests the presence of α crystalline phase of copper phthalocyanine in the as-deposited thin films. Infrared spectra of thin films on the KBr pallet before and after exposure to the vapours of ammonia and methanol have been recorded in the wavenumber region of 400-1650 cm -1 . The observed infrared bands also confirm the α crystalline phase. On exposure, change in the intensity of some bands is observed. A new band at 1385 cm -1 , forbidden under ideal D 4h point group symmetry, is also observed in the spectra of exposed thin films. These changes in the spectra are interpreted in terms of the lowering of molecular symmetry from D 4h to C 4v . Axial ligation of the vapour molecules on fifth coordination site of the metal ion is responsible for lowering of the molecular symmetry

  8. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

    2016-06-30

    Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  9. Influence of annealing on texture properties of cerium oxide thin films

    International Nuclear Information System (INIS)

    Arunkumar, P.; Suresh Babu, K.; Ramaseshan, R.; Dash, S.

    2013-01-01

    Future power demand needs an energy source with higher efficiency, better power density, clean energy and fuel flexibility. Solid oxide fuel cell (SOFC) is one of the potential sources for future needs. Though the polymer and direct methanol based electrolyte are much suitable, for versatile applications (portable devices) they are having major challenges such as design, platinum based catalyst, lower power density and fuel flexibility (free from hydrocarbons). However, in SOFC the high operating temperature is the only major issue. Operating temperature of SOFC could be reduced by proper selection of electrolyte material which should have minimum ionic conductivity of 0.1 Scm -1 at reduced activation energy. This can be achieved by thin film based doped cerium oxide electrolyte for SOFC, leads to Intermediate Temperature Solid Oxide Fuel Cell (ITSOFC). In the present work, we focus on the synthesis of cerium oxide and 20 mol % samarium doped cerium oxide (SDC) nanoparticles by co-precipitation method and to synthesis thin films of the same. Pellets of those powders were heat treated at different temperatures and used as targets for e-beam evaporation to fabricate thin film based electrolyte. Stoichiometry of both powders and thin films were confirmed by XRF and EPMA. GIXRD profiles of ceria and SDC thin films are shown below and a preferred orientation effect is observed in SDC films. In SDC films the X-ray peaks have a shift towards lower angles, due to the difference in ionic radii of Ce 4+ and Sm 3+ . The band gap of CeO 2 (2.88 eV) from optical absorption technique indicates the presence of Ce 3+ with Ce 4+ , indirectly shows the concentration of oxygen vacancies which is required for the thin film electrolyte

  10. Optical properties of silver sulphide thin films formed on evaporated Ag by a simple sulphurization method

    Energy Technology Data Exchange (ETDEWEB)

    Barrera-Calva, E., E-mail: ebc@xanum.uam.m [Departamento de Ingenieria de Procesos e hidraulica, Universidad Autonoma Metropolitana - Iztapalapa, Av. Purisima Esq. Michoacan, Col. Vicentina, Mexico, D.F., 09340 (Mexico); Ortega-Lopez, M.; Avila-Garcia, A.; Matsumoto-Kwabara, Y. [Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del IPN, Mexico DF 07360 (Mexico)

    2010-01-31

    Silver sulphide (Ag{sub 2}S) thin films were grown on the surface of silver films (Ag) deposited on glass substrate by using a simple chemical sulphurization method. According to X-ray diffraction analysis, the Ag{sub 2}S thin films display low intensity peaks at 34.48{sup o}, 36.56{sup o}, and 44.28{sup o}, corresponding to diffraction from (100), (112) and (103) planes of the acanthite phase (monoclinic). A model of the type Ag{sub 2}S/Ag/glass was deduced from spectroscopic ellipsometric measurements. Also, the optical constants (n, k) of the system were determined. Furthermore, the optical properties as solar selective absorber for collector applications were assessed. The optical reflectance of the Ag{sub 2}S/Ag thin film systems exhibits the expected behavior for an ideal selective absorber, showing a low reflectance in the wavelength range below 2 {mu}m and a high reflectance for wavelengths higher than that value. An absorptance about 70% and an emittance about 3% or less were calculated for several samples.

  11. Effect of preparation conditions on the properties of Cu{sub 3}BiS{sub 3} thin films grown by a two - step process

    Energy Technology Data Exchange (ETDEWEB)

    Mesa, F; Gordillo, G, E-mail: fgmesar@unal.edu.c, E-mail: ggordillog@unal.edu.c [Departamento de Fisica, Universidad Nacional de Colombia, Bogota Cr.30 No 45-03 (Colombia)

    2009-05-01

    Cu{sub 3}BiS{sub 3} thin films were prepared on soda-lime glass substrates by co-evaporation of the precursors in a two-step process; for that, the metallic precursors were evaporated from a tungsten boat in presence of elemental sulfur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, atomic force microscopy AFM and x-ray diffraction (XRD) measurements to investigate the effect of the growth conditions on the optical, morphological and structural properties. The results revealed that, independently of the deposition conditions, the films grow only in the orthorhombic Cu{sub 3}BiS{sub 3} phase. It was also found that the Cu{sub 3}BiS{sub 3} films present p-type conductivity, a high absorption coefficient (greater than 10{sup 4} cm{sup -1}) and an energy band gap Eg of about 1.41 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

  12. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

    International Nuclear Information System (INIS)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2011-01-01

    B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10 -4 Ω cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm 2 /Vs and carrier concentrations on the order of 10 20 cm -3 . All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10 -3 -10 -4 Ω cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

  13. Influence of substrate temperature and annealing on structural and optical properties of TiO{sub 2} films deposited by reactive e-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Pjević, D., E-mail: dejanp@vinca.rs [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Marinković, T.; Savić, J.; Bundaleski, N.; Obradović, M.; Milosavljević, M. [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Kulik, M. [Frank Laboratory of Neutron Physics, JINR, Joliot-Curie St. 6, Dubna 141980, Moscow Region (Russian Federation)

    2015-09-30

    The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO{sub 2} thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200–400 °C heated substrates. Post-deposition annealing was done for 3 h at 500 °C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet–visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O ~ 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase–rutile mixed films were obtained, and in some cases TiO and Ti{sub 2}O{sub 3} phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO{sub 2} thin films with defined structure and optical properties. - Highlights: • TiO{sub 2} films were deposited by reactive e-beam evaporation. • Structure and properties were studied as a function of deposition temperature. • Stoichiometry of as-deposited films was Ti:O ~ 1:2, containing different Ti-O phases. • Post-deposition annealing yielded phase transformation, affecting the properties. • Refractive index increases with the substrate deposition temperature.

  14. Miniature electron bombardment evaporation source: evaporation rate measurement

    International Nuclear Information System (INIS)

    Nehasil, V.; Masek, K.; Matolin, V.; Moreau, O.

    1997-01-01

    Miniature electron beam evaporation sources which operate on the principle of vaporization of source material, in the form of a tip, by electron bombardment are produced by several companies specialized in UHV equipment. These sources are used primarily for materials that are normally difficult to deposit due to their high evaporation temperature. They are appropriate for special applications such as heteroepitaxial thin film growth requiring a very low and well controlled deposition rate. A simple and easily applicable method of evaporation rate control is proposed. The method is based on the measurement of ion current produced by electron bombardment of evaporated atoms. The absolute evaporation flux values were measured by means of the Bayard-Alpert ion gauge, which enabled the ion current vs evaporation flux calibration curves to be plotted. (author). 1 tab., 4 figs., 6 refs

  15. Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

    2010-07-15

    Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. Enhanced chemical sensing organic thin-film transistors

    Science.gov (United States)

    Tanese, M. C.; Torsi, L.; Farinola, G. M.; Valli, L.; Hassan Omar, O.; Giancane, G.; Ieva, E.; Babudri, F.; Palmisano, F.; Naso, F.; Zambonin, P. G.

    2007-09-01

    Organic thin film transistor (OTFT) sensors are capable of fast, sensitive and reliable detection of a variety of analytes. They have been successfully tested towards many chemical and biological "odor" molecules showing high selectivity, and displaying the additional advantage of being compatible with plastic technologies. Their versatility is based on the possibility to control the device properties, from molecular design up to device architecture. Here phenylene-thiophene based organic semiconductors functionalized with ad hoc chosen side groups are used as active layers in sensing OTFTs. These materials, indeed, combine the detection capability of organic molecules (particularly in the case of bio-substituted systems) with the electronic properties of the conjugated backbone. A new OTFT structure including Langmuir-Schäfer layer by layer organic thin films is here proposed to perform chemical detection of organic vapors, including vapor phase chiral molecules such as citronellol vapors, with a detection limit in the ppm range. Thermally evaporated α6T based OTFT sensors are used as well to be employed as standard system in order to compare sensors performances.

  17. The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films

    Directory of Open Access Journals (Sweden)

    P. S. Raghupathi

    2005-01-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared using the reactive evaporation technique on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays prominent role in controlling the electrical and optical properties of the ITO thin films. Resistivity, electrical conductivity, activation energy, optical transmission and band gap energy were investigated. A transmittance value of more than 90% in the visible region of the spectrum and an electrical conductivity of 3x10–6 Ωm has been obtained with a deposition rate of 2 nm/min. XRD studies showed that the films are polycrystalline.

  18. Fabrication of yttrium-doped barium zirconate thin films with sub-micrometer thickness by a sol–gel spin coating method

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Hanlin; Su, Pei-Chen, E-mail: peichensu@ntu.edu.sg

    2015-06-01

    A modified sol–gel process was developed for the fabrication of sub-micrometer scale yttrium-doped barium zirconate (BZY) thin film at much lower processing temperatures. The film was fabricated by direct spin-coating of the sol on a Si{sub 3}N{sub 4} passivated Si substrate, followed by low temperature thermal annealing at 1000 °C, and single BZY phase without barium carbonate residue was obtained. A 200 nm-thick thin film without obvious through-film cracks was fabricated with optimized process parameters of sol concentration and heating rate. The stoichiometry of the BZY thin film was well-controlled and no Ba evaporation was observed due to the low processing temperature. The combination of sol–gel and spin coating method can be a promising alternative to vacuum-based thin film deposition techniques for the fabrication of sub-micrometer scale BZY thin film. - Highlights: • A sol–gel spin coating method was developed for the fabrication of BZY thin films. • The processing temperature was much lower compared to powder-based sintering. • Sub-micrometer scale BZY thin film with well-controlled stoichiometry was obtained.

  19. Optical properties of titanium trisulphide (TiS3) thin films

    International Nuclear Information System (INIS)

    Ferrer, I.J.; Ares, J.R.; Clamagirand, J.M.; Barawi, M.; Sánchez, C.

    2013-01-01

    Titanium trisulphide thin films have been grown on quartz substrates by sulphuration of electron-beam evaporated Ti layers (d ∼ 300 nm) in a vacuum sealed ampoule in the presence of sulphur powder at 550 °C for different periods of time (1 to 20 h). Thin films were characterized by X-ray diffraction, energy dispersive analyses of X-ray and scanning electron microscopy. Results demonstrate that films are composed by monoclinic titanium trisulphide. Films show n-type conductivity with a relatively high resistivity (ρ ∼ 4 ± 2 Ω·cm) and high values of the Seebeck coefficient (− 600 μV/K) at room temperature. Values of the optical absorption coefficient about α ∼ 10 5 cm −1 , determined from reflectance and transmittance measurements, have been obtained at photon energies hυ > 2 eV. The absorption coefficient dependence on the photon energy in the range of 1.6–3.0 eV hints the existence of a direct transition with an energy gap between 1.35 and 1.50 eV. By comparing these results with those obtained from bulk TiS 3 , a direct transition with lower energy is also found which could have been hidden due to the low value of the absorption coefficient in this energy range. - Highlights: ► Thin films of TiS 3 have been obtained by sulphuration of Ti layers. ► Optical properties of TiS 3 thin films have been determined. ► Optical energy gap of TiS 3 has been obtained. ► Optical properties of bulk TiS 3 have been measured and compared with those of films

  20. The effect of solvent upon molecularly thin rotaxane film formation

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, Alan A. [Nanoscale Function Group, Centre for Research on Adaptive Nanostructures and Nanodevices, University of Dublin, Trinity College, Dublin 2 (Ireland)]. E-mail: farrelaa@tcd.ie; Kay, Euan R. [School of Chemistry, University of Edinburgh, The King' s Buildings, West Mains Road, Edinburgh EH9 3 JJ (United Kingdom); Bottari, Giovanni [School of Chemistry, University of Edinburgh, The King' s Buildings, West Mains Road, Edinburgh EH9 3 JJ (United Kingdom); Leigh, David A. [School of Chemistry, University of Edinburgh, The King' s Buildings, West Mains Road, Edinburgh EH9 3 JJ (United Kingdom); Jarvis, Suzanne P. [Nanoscale Function Group, Centre for Research on Adaptive Nanostructures and Nanodevices, University of Dublin, Trinity College, Dublin 2 (Ireland)

    2007-05-15

    We have investigated variations in molecularly thin rotaxane films deposited by solvent evaporation, using atomic force microscopy (AFM). Small changes in rotaxane structure result in significant differences in film morphology. The addition of exo-pyridyl moietes to the rotaxane macrocycle results in uniform domains having orientations corresponding to the underlying substrate lattice, while a larger, less symmetric molecule results in a greater lattice mismatch and smaller domain sizes. We have measured differences in film heights both as a function of the solvent of deposition and as a function of surface coverage of rotaxanes. Based on these observations we describe how the use of solvents with higher hydrogen-bond basicity results in films which are more likely to favour sub-molecular motion.

  1. Role of heat treatment on structural and optical properties of thermally evaporated Ga{sub 10}Se{sub 81}Pb{sub 9} chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Sebaii, A.A., E-mail: ahmedelsebaii@yahoo.com [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrews College, Gorakhpur 273001 (India); Al-Marzouki, F.M.; Faidah, A.S.; Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia)

    2012-08-15

    Amorphous chalcogenides, based on Se, have become materials of commercial importance and were widely used for optical storage media. The present work deals with the structural and optical properties of Ga{sub 10}Se{sub 81}Pb{sub 9} ternary chalcogenide glass prepared by melt quenching technique. The glass transition, crystallization and melting temperatures of the synthesized glass were measured by non-isothermal DSC measurements at a constant heating rate of 30 K/min. Thin films of thickness 4000 A were prepared by thermal evaporation techniques on glass/Si (1 0 0) wafer substrate. These thin films were thermally annealed for two hours at three different annealing temperatures of 345, 360 and 375 K, which were in between the glass transition and crystallization temperatures of the Ga{sub 10}Se{sub 81}Pb{sub 9} glass. The structural, morphological and optical properties of as-prepared and annealed thin films were studied. Analysis of the optical absorption data showed that the rules of the non-direct transitions predominate. It was also found that the optical band gap decreases while the absorption coefficient, refractive index and extinction coefficient increase with increasing the annealing temperature. Due to the higher values of absorption coefficient and annealing dependence of the optical band gap and optical constants, the investigated material could be used for optical storage. - Highlights: Black-Right-Pointing-Pointer Annealing effect on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by x-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Thermal annealing causes a decrease in optical band gap in Ga{sub 10}Se{sub 81}Pb{sub 9} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non

  2. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  3. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    International Nuclear Information System (INIS)

    Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

    2009-01-01

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

  4. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

    2009-11-15

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

  5. Effect of argon addition into oxygen atmosphere on YBCO thin films deposition

    International Nuclear Information System (INIS)

    Mozhaev, P. B.; Borisenko, I. V.; Ovsyannikov, G. A.; Kuehle, A.; Bindslev-Hansen, J.; Johannes, L.; Skov, J. L.

    2002-01-01

    Multicomponent nature of the YBa 2 Cu 3 O x (YBCO) high-temperature superconductor makes difficult fabrication of smooth thin films: every local deviation from stoichiometry can result in seeding of a non-superconducting oxide particle. High density of such particles on typical YBCO thin film surface, however, presumes overall non-stoichiometry of the film. Such an effect can result from (i) non-uniform material transport from target to substrate, and (ii) re-evaporation or re-sputtering from the growing film surface. The first reason is more usual for laser ablation deposition technique, the second is typical for long sputtering deposition processes. Substitution of oxygen with argon in the deposition atmosphere improves surface quality of YBCO thin films deposited both by laser ablation and DC-sputtering at high pressure techniques. In the first case, the ablated species are scattered different ways in the oxygen atmosphere. Addition of argon decreases the inelastic scattering of barium; the proper part of Ar in the deposition atmosphere makes scattering and, hence, transport of all atoms uniform. The YBCO films deposited by DC-sputtering at high pressure technique are Ba-deficient also, but the reason is re-sputtering of Ba from the growing film as a result of negative oxygen ions bombardment. Such bombardment can lead also to chemical interaction of the deposited material with the substrate, as in the case of deposition of YBCO thin film on the CeO 2 buffer layer on sapphire. Substitution of oxygen with argon not only suppresses ion bombardment of the film, but also increases discharge stability due to presence of positive Ar + ions. The limiting factor of argon substitution is sufficient oxygenation of the growing oxide film. When oxygen partial pressure is too small, the superconducting quality of the YBCO thin film decreases and such a decrease cannot be overcome by prolonged oxygenation after deposition. (Authors)

  6. Formation of nano-sized pinholes array in thin Ni film on MgO(100) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lin Chuan; Naramoto, Hiroshi; Xu Yonghua; Kitazawa, Sin-iti; Narumi, Kazumasa; Sakai, Seiji

    2003-10-22

    We have grown thin Ni films with various thicknesses on polished MgO(100) single crystal substrates in an e-gun evaporation system. The morphology of the as-deposited films was characterized with atomic force microscopy. Pinholes with average diameter of 5-10 nm are found in the film with thickness from 1 to 15 nm, and pinholes array was observed in the film 10 nm thick. The origin of such structure formation is discussed in terms of the elastic strain energy.

  7. Study of third order nonlinearity of chalcogenide thin films using third harmonic generation measurements

    Science.gov (United States)

    Rani, Sunita; Mohan, Devendra; Kumar, Manish; Sanjay

    2018-05-01

    Third order nonlinear susceptibility of (GeSe3.5)100-xBix (x = 0, 10, 14) and ZnxSySe100-x-y (x = 2, y = 28; x = 4, y = 20; x = 6, y = 12; x = 8, y = 4) amorphous chalcogenide thin films prepared using thermal evaporation technique is estimated. The dielectric constant at incident and third harmonic wavelength is calculated using "PARAV" computer program. 1064 nm wavelength of Nd: YAG laser is incident on thin film and third harmonic signal at 355 nm wavelength alongwith fundamental light is obtained in reflection that is separated from 1064 nm using suitable optical filter. Reflected third harmonic signal is measured to trace the influence of Bi and Zn on third order nonlinear susceptibility and is found to increase with increase in Bi and Zn content in (GeSe3.5)100-xBix, and ZnxSySe100-x-y chalcogenide thin films respectively. The excellent optical nonlinear property shows the use of chalcogenide thin films in photonics for wavelength conversion and optical data processing.

  8. Growth and structural properties of indium sesquitelluride (In2Te3) thin films

    International Nuclear Information System (INIS)

    Desai, R.R.; Lakshminarayana, D.; Patel, P.B.; Patel, P.K.; Panchal, C.J.

    2005-01-01

    Indium sesquitelluride (In 2 Te 3 ) compound was synthesized by mixing and melting the pure individual elements in stoichiometric proportions. The synthesized compound was utilized for the deposition of In 2 Te 3 thin films on glass and freshly cleaved NaCl substrates using flash evaporation technique. The structure of In 2 Te 3 thin films has been studied on the glass substrates by X-ray diffraction technique and on the cleavage faces of NaCl by electron diffraction technique. It was observed that the deposition from an ordered α-phase compound results in polycrystalline films on glass substrate at 473 K which are predominant α-phase and random β-phase compounds resulting in single crystal films on NaCl substrate at 523 K. Effect of source and substrate temperature on the composition of In 2 Te 3 was also studied

  9. Preparation and microstructural characterization of TiC and Ti0.6W0.4/TiC0.6 composite thin films obtained by activated reactive evaporation

    International Nuclear Information System (INIS)

    Montes de Oca, J. A.; LePetitcorps, Y.; Manaud, J.-P.; Vargas Garcia, J. R.

    2008-01-01

    Titanium carbide-based coatings were deposited on W substrates at a high coating growth rate by activated reactive evaporation at 500 and 600 deg. C in a L560 Leybold system using propene as reactive atmosphere. The crystal structure, lattice parameter, preferred orientation, and grain size of the coatings were determined by x-ray diffraction technique using Cu Kα. The analysis of the coating morphology was performed by scanning electron microscopy (SEM), and the composition of the films was analyzed by Auger electron spectroscopy and electron-probe microanalysis. Experimental results suggested that temperature was one of the most important parameters in the fabrication of stoichiometric TiC coatings. Thus, TiC coatings were obtained at 600 deg. C, whereas TiC 0.6 nonstoichiometric coatings codeposited with a free Ti phase were obtained at 500 deg. C, giving rise to the formation of a composite thin film. After annealing at 1000 deg. C, the stoichiometric films remained stable, but a crack pattern was formed over the entire coating surface. In addition, Ti 0.6 W 0.4 /TiC 0.6 composite thin coatings were obtained for the films synthesized at 500 deg. C. The formation of a Ti 0.6 W 0.4 ductile phase in the presence of a TiC 0.6 phase was responsible to avoid the coating cracking

  10. Chemical vapor deposition and electric characterization of perovskite oxides LaMO3 (M=Co, Fe, Cr and Mn) thin films

    International Nuclear Information System (INIS)

    Ngamou, Patrick Herve Tchoua; Bahlawane, Naoufal

    2009-01-01

    Oxides with a perovskite structure are important functional materials often used for the development of modern devices. In view of extending their applicability, it is necessary to efficiently control their growth as thin films using technologically relevant synthesis methods. Pulsed spray evaporation CVD was used to grow several perovskite-type oxides on planar silicon substrates at temperatures ranging from 500 to 700 deg. C. The optimization of the process control parameters allows the attainment of the perovskite structure as a single phase. The electrical characterization using the temperature-dependent conductivity and thermopower indicates the p-type conduction of the grown films and shows a decreasing concentration of the charge carrier, mobility and band gap energy in the sequence LaCoO 3 >LaMnO 3 >LaCrO 3 >LaFeO 3 . The investigation of the electric properties of the obtained perovskite thin films shows the versatility of CVD as a method for the development of innovative devices. - Graphical abstract: We report a single step deposition of perovskite thin films LaMO 3 (M: Co, Mn, Cr, Fe) using pulsed spray evaporation chemical vapor deposition. Electrical and thermopower properties, similar to these of bulk materials, could promote the development of modern thermoelectric devices based on thin films technology.

  11. Electrical contacts on polyimide substrates for flexible thin film photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Guillen, C.; Herrero, J

    2003-05-01

    Both frontal and back electrical contacts have been developed onto polyimide sheets (Kapton KJ[reg]) as alternative substrates to the conventional glasses, for application in lightweight and flexible thin film photovoltaic devices. Transparent and conductive indium tin oxide (ITO) thin films have been deposited by r.f.-magnetron sputtering as the frontal electrical contact. On the other hand, Mo, Cr and Ni layers have been prepared by e-gun evaporation for the back electrical connections. ITO films deposited onto polyimide have shown similar optical transmittance and higher electrical conductivity than onto glass substrates. The transmittance decreases and the conductivity increases after heating at 400 sign C in vacuum atmosphere. Mo, Cr and Ni layers deposited onto polyimide showed similar structure and electrical conductivity than onto conventional glasses. The properties of Mo and Cr layers remained unchanged after heating at 400 sign C in selenium atmosphere.

  12. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  13. Denton E-beam Evaporator #2

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Name: E-Beam Evap 2This is an electron gun evaporator for the deposition of metals and dielectrics thin films. Materials available are: Ag, Al, Au,...

  14. Falling film evaporation on a tube bundle with plain and enhanced tubes

    International Nuclear Information System (INIS)

    Habert, M.

    2009-04-01

    The complexities of two-phase flow and evaporation on a tube bundle present important problems in the design of heat exchangers and the understanding of the physical phenomena taking place. The development of structured surfaces to enhance boiling heat transfer and thus reduce the size of evaporators adds another level of complexity to the modeling of such heat exchangers. Horizontal falling film evaporators have the potential to be widely used in large refrigeration systems and heat pumps, in the petrochemical industry and for sea water desalination units, but there is a need to improve the understanding of falling film evaporation mechanisms to provide accurate thermal design methods. The characterization of the effect of enhanced surfaces on the boiling phenomena occurring in falling film evaporators is thus expected to increase and optimize the performance of a tube bundle. In this work, the existing LTCM falling film facility was modified and instrumented to perform falling film evaporation measurements on single tube row and a small tube bundle. Four types of tubes were tested including: a plain tube, an enhanced condensing tube (Gewa-C+LW) and two enhanced boiling tubes (Turbo-EDE2 and Gewa-B4) to extend the existing database. The current investigation includes results for two refrigerants, R134a and R236fa, at a saturation temperature of T sat = 5 °C, liquid film Reynolds numbers ranging from 0 to 3000, at heat fluxes between 20 and 60 kW/m² in pool boiling and falling film configurations. Measurements of the local heat transfer coefficient were obtained and utilized to improve the current prediction methods. Finally, the understanding of the physical phenomena governing the falling film evaporation of liquid refrigerants has been improved. Furthermore, a method for predicting the onset of dry patch formation has been developed and a local heat transfer prediction method for falling film evaporation based on a large experimental database has been proposed

  15. Development of new releasing agents for preparation of thin self-supporting target films

    Energy Technology Data Exchange (ETDEWEB)

    Sugai, I; Takaku, S; Hasegawa, T [Tokyo Univ., Tanashi (Japan). Inst. for Nuclear Study

    1978-06-01

    Several kinds of materials were examined for the usefulness as releasing agents in the preparation of various thin self-supporting target films for use in nuclear reaction experiments. NaCl, BaCl/sub 2/, KCl, CsI, Teepol, glucose, KIO/sub 3/, mica, nitrocellulose of Formvar was deposited onto glass plates as the release agent by vacuum evaporation or dipping method. The obtained target film was tested on impurities from the release agent by using nuclear reactions. The relative effectiveness of each release agent was also considered from ease in the stripping of target films.

  16. Development of new releasing agents for preparation of thin self-supporting target films

    International Nuclear Information System (INIS)

    Sugai, Isao; Takaku, Seisaku; Hasegawa, Takeo

    1978-01-01

    Several kinds of materials were examined for the usefulness as releasing agents in the preparation of various thin self-supporting target films for use in nuclear reaction experiments. NaCl, BaCl 2 , KCl, CsI, Teepol, glucose, KIO 3 , mica, nitrocellulose of Formvar was deposited onto glass plates as the release agent by vacuum evaporation or dipping method. The obtained target film was tested on impurities from the release agent by using nuclear reactions. The relative effectiveness of each release agent was also considered from ease in the stripping of target films. (auth.)

  17. NMR characterization of thin films

    Science.gov (United States)

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  18. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  19. Biomaterial thin film deposition and characterization by means of MAPLE technique

    International Nuclear Information System (INIS)

    Bloisi, F.; Vicari, L.; Papa, R.; Califano, V.; Pedrazzani, R.; Bontempi, E.; Depero, L.E.

    2007-01-01

    Polyethylene glycol (PEG) is a polymer with technologically important applications, especially as a biomaterial. Several biomedical applications (such as tissue engineering, spatial patterning of cells, anti-biofouling and biocompatible coatings) require the application of high quality PEG thin films. In order to have a good adhesion to substrate chemically modified polymer molecules have been used, but for some 'in vivo' applications it is essential to deposit a film with the same chemical and structural properties of bulk PEG. Pulsed laser deposition (PLD) technique is generally able to produce high quality thin films but it is inadequate for polymer/organic molecules. MAPLE (Matrix Assisted Pulsed Laser Evaporation) is a recently developed PLD based thin film deposition technique, particularly well suited for organic/polymer thin film deposition. Up to now MAPLE depositions have been carried out mainly by means of modified PLD systems, using excimer lasers operating in UV, but the use of less energetic radiations can minimize the photochemical decomposition of the polymer molecules. We have used a deposition system explicitly designed for MAPLE technique connected to a Q-switched Ng:YAG pulsed laser which can be operated at different wavelength ranging from IR to UV in order to optimise the deposition parameters. The capability of MAPLE technique to deposit PEG has been confirmed and preliminary results show that visible (532 nm wavelength) radiation gives better results with respect to UV (355 nm) radiation. Despite usually UV wavelengths have been used and even if more systematic tests must be performed, it is important to underline that the choice of laser wavelength plays an important role in the application of MAPLE thin film deposition technique

  20. Denton E-beam Evaporator #1

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Name: E-Beam Evap 1This is a dual e-beam/thermal evaporator for the deposition of metal and dielectric thin films. Materials available are: Ag, Al,...

  1. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

    2011-07-15

    B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10{sup -4}{Omega} cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm{sup 2}/Vs and carrier concentrations on the order of 10{sup 20} cm{sup -3}. All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10{sup -3}-10{sup -4}{Omega} cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

  2. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  3. Experimental study of evaporation of horizontal films of water–salt solutions

    Directory of Open Access Journals (Sweden)

    Elistratov S.L.

    2015-01-01

    Full Text Available The present studies were carried out for the horizontal films (thin layers of water and water solutions of NaCl, CaCl2, LiCl, and LiBr with different solubility characteristics, as well as with specific features of formation and decay of water hydrates. Required volume of solution Vo of given weight concentration ξo, preliminary heated to the working surface temperature, was put in one step on the horizontal bottom of the bowl, heated to working temperature tCT, by means of volume batchers Thermo Scientific. After evaporation completion, the final mass of solution and form of their residue were registered. At the final stage of evaporation formation of NaCl crystals and water hydrates of CaCl2 · 2H2O, LiCl · H2O, and LiBr · 2H2O occurred.

  4. Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

    Directory of Open Access Journals (Sweden)

    Arturo Rodríguez Gómez

    2014-09-01

    Full Text Available The interest of microelectronics industry in new organic compounds for the manufacture of luminescent devices has increased substantially in the last decade. In this paper, we carried out a study of the usage feasibility of three organic bidentate ligands (2,6-dihydroxyanthraquinone, anthraflavic acid and potassium derivative salt of anthraflavic acid for the synthesis of an organic semiconductor based in silicon phthalocyanines (SiPcs. We report the visible photoluminescence (PL at room temperature obtained from thermal-evaporated thin films of these new materials. The surface morphology of these films was analyzed by atomic force microscopy (AFM and scanning electron microscopy (SEM. AFM indicated that the thermal evaporation technique is an excellent resource in order to obtain low thin film roughness when depositing these kinds of compounds. Fourier transform infrared spectroscopy (FTIR spectroscopy was employed to investigate possible changes in the intra-molecular bonds and to identify any evidence of crystallinity in the powder compounds and in the thin films after their deposition. FTIR showed that there was not any important change in the samples after the thermal deposition. The absorption coefficient (α in the absorption region reveals non-direct transitions. Furthermore, the PL of all the investigated samples were observed with the naked eye in a bright background and also measured by a spectrofluorometer. The normalized PL spectra showed a Stokes shift ≈ 0.6 eV in two of our three samples, and no PL emission in the last one. Those results indicate that the Vis PL comes from a recombination of charge carriers between conduction band and valence band preceded by a non-radiative relaxation in the conduction band tails.

  5. Influence of annealing atmosphere on structural and superconducting properties of MgB{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gregor, M., E-mail: gregor@fmph.uniba.sk; Plecenik, T.; Sobota, R.; Brndiarova, J.; Roch, T.; Satrapinskyy, L.; Kus, P.; Plecenik, A.

    2014-09-01

    Highlights: • Superconducting MgB{sub 2} thin film were deposited by co-deposition using the thermal and e-beam evaporation. • Ex situ annealing process was done using various atmospheres. • Influence of annealing atmosphere and temperature on superconducting and structural properties were studied. • Possible mechanisms of the formation and crystallization of MgB{sub 2} thin film are discussed. - Abstract: Influence of an ex situ annealing temperature and atmosphere on chemical composition and structural and superconducting properties of MgB{sub 2} thin films deposited by vacuum evaporation has been investigated. The annealing has been done in Ar, N{sub 2} and Ar + 5%H{sub 2} atmospheres at pressure of 700 Pa and temperature varying from 700 to 800 °C. It has been shown that annealing in Ar and N{sub 2} atmosphere at 700–800 °C produces relatively thick MgO layer on the surface of the films, while creation of such layer is highly reduced if the annealing is done in reducing Ar + 5%H{sub 2} atmosphere. The XPS and XRD results suggest that the MgO layer prevents out-diffusion of Mg from the film during the annealing, what assures better stoichiometry of the films as well as creation of larger MgB{sub 2} grains. The films with the highest amount of MgO on the surface, annealed in nitrogen atmosphere, thus paradoxically exhibited the highest critical temperature of T{sub c0} = 34.8 K with very sharp transition width of 0.1 K.

  6. Characterization of a new transparent-conducting material of ZnO doped ITO thin films

    Science.gov (United States)

    Ali, H. M.

    2005-11-01

    Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S o for the thin films were determined and presented in this work.

  7. Evaporation dynamics of a sessile droplet on glass surfaces with fluoropolymer coatings: focusing on the final stage of thin droplet evaporation.

    Science.gov (United States)

    Gatapova, Elizaveta Ya; Shonina, Anna M; Safonov, Alexey I; Sulyaeva, Veronica S; Kabov, Oleg A

    2018-03-07

    The evaporation dynamics of a water droplet with an initial volume of 2 μl from glass surfaces with fluoropolymer coatings are investigated using the shadow technique and an optical microscope. The droplet profile for a contact angle of less than 5° is constructed using an image-analyzing interference technique, and evaporation dynamics are investigated at the final stage. We coated the glass slides with a thin film of a fluoropolymer by the hot-wire chemical vapor deposition method at different deposition modes depending on the deposition pressure and the temperature of the activating wire. The resulting surfaces have different structures affecting the wetting properties. Droplet evaporation from a constant contact radius mode in the early stage of evaporation was found followed by the mode where both contact angle and contact radius simultaneously vary in time (final stage) regardless of wettability of the coated surfaces. We found that depinning occurs at small contact angles of 2.2-4.7° for all samples, which are smaller than the measured receding contact angles. This is explained by imbibition of the liquid into the developed surface of the "soft" coating that leads to formation of thin droplets completely wetting the surface. The final stage, which is little discussed in the literature, is also recorded. We have singled out a substage where the contact line velocity is abruptly increasing for all coated and uncoated surfaces. The critical droplet height corresponding to the transition to this substage is about 2 μm with R/h = 107. The duration of this substage is the same for all coated and uncoated surfaces. Droplets observed at this substage for all the tested surfaces are axisymmetric. The specific evaporation rate clearly demonstrates an abrupt increase at the final substage of the droplet evaporation. The classical R 2 law is justified for the complete wetting situation where the droplet is disappearing in an axisymmetric manner.

  8. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  9. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  10. Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

    International Nuclear Information System (INIS)

    Watanabe, S.

    1984-01-01

    The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

  11. Direct observation of phase transition of GeSbTe thin films by Atomic Force Microscope

    Energy Technology Data Exchange (ETDEWEB)

    Yang Fei [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang Rui; Geng Lei; Tong Liang; Xu Jun [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Su Weining; Yu Yao [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Ma Zhongyuan; Chen Kunji [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2012-10-01

    Graphical abstract: Nano-sized marks on GST thin film were fabricated using Conductive-AFM (Atomic Force Microscope). The AFM morphology images show that the marks are ablated at the center and a raised ring surrounding it. Highlights: Black-Right-Pointing-Pointer Microstructure of GeSbTe thin films was characterized by XRD and AFM. Black-Right-Pointing-Pointer Annealing and applying electrical field can induce crystallization on thin film. Black-Right-Pointing-Pointer Conductive-AFM was used to modify the surface of GeSbTe thin film. - Abstract: GeSbTe (GST) thin films were deposited on quartz substrates using electron beam evaporation system and then annealed in nitrogen atmosphere at different temperatures, ranging from 20 Degree-Sign C to 300 Degree-Sign C. X-ray diffraction (XRD) and Atomic Force microscope (AFM) measurements were used to characterize the as-deposited and post-annealed thin films. Annealing treatment was found to induce changes on microstructure, surface roughness and grain size, indicating that with the increase of annealing temperature, the amorphous GST films first changed to face-centered-cubic (fcc) phase and then the stable hexagonal (hex) phase. Meanwhile, conductive-AFM (C-AFM) was used to produce crystallized GST dots on thin films. I-V spectroscopy results show that GST films can switch from amorphous state to crystalline state at threshold voltage. After switching, I-V curve exhibits ohmic characteristic, which is usually observed in crystallized GST films. By applying repeated I-V spectroscopies on the thin films, crystallized nuclei were observed. As the times of I-V spectroscopies increases, the area of written dots increases, and the center of the mark begin to ablate. The AFM images show that the shape of marks is an ablated center with a raised ring surrounding it.

  12. On the Mechanism of In Nanoparticle Formation by Exposing ITO Thin Films to Hydrogen Plasmas.

    Science.gov (United States)

    Fan, Zheng; Maurice, Jean-Luc; Chen, Wanghua; Guilet, Stéphane; Cambril, Edmond; Lafosse, Xavier; Couraud, Laurent; Merghem, Kamel; Yu, Linwei; Bouchoule, Sophie; Roca I Cabarrocas, Pere

    2017-10-31

    We present our systematic work on the in situ generation of In nanoparticles (NPs) from the reduction of ITO thin films by hydrogen (H 2 ) plasma exposure. In contrast to NP deposition from the vapor phase (i.e., evaporation), the ITO surface can be considered to be a solid reservoir of In atoms thanks to H 2 plasma reduction. On one hand, below the In melting temperature, solid In NP formation is governed by the island-growth mode, which is a self-limiting process because the H 2 plasma/ITO interaction will be gradually eliminated by the growing In NPs that cover the ITO surface. On the other hand, we show that above the melting temperature In droplets prefer to grow along the grain boundaries on the ITO surface and dramatic coalescence occurs when the growing NPs connect with each other. This growth-connection-coalescence behavior is even strengthened on In/ITO bilayers, where In particles larger than 10 μm can be formed, which are made of evaporated In atoms and in situ released ones. Thanks to this understanding, we manage to disperse dense evaporated In NPs under H 2 plasma exposure when inserting an ITO layer between them and substrate like c-Si wafer or glass by modifying the substrate surface chemistry. Further studies are needed for more precise control of this self-assembling method. We expect that our findings are not limited to ITO thin films but could be applicable to various metal NPs generation from the corresponding metal oxide thin films.

  13. Specific heat measurement set-up for quench condensed thin superconducting films.

    Science.gov (United States)

    Poran, Shachaf; Molina-Ruiz, Manel; Gérardin, Anne; Frydman, Aviad; Bourgeois, Olivier

    2014-05-01

    We present a set-up designed for the measurement of specific heat of very thin or ultra-thin quench condensed superconducting films. In an ultra-high vacuum chamber, materials of interest can be thermally evaporated directly on a silicon membrane regulated in temperature from 1.4 K to 10 K. On this membrane, a heater and a thermometer are lithographically fabricated, allowing the measurement of heat capacity of the quench condensed layers. This apparatus permits the simultaneous thermal and electrical characterization of successively deposited layers in situ without exposing the deposited materials to room temperature or atmospheric conditions, both being irreversibly harmful to the samples. This system can be used to study specific heat signatures of phase transitions through the superconductor to insulator transition of quench condensed films.

  14. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  15. Thin films of copper antimony sulfide: A photovoltaic absorber material

    Energy Technology Data Exchange (ETDEWEB)

    Ornelas-Acosta, R.E. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Shaji, S. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico)

    2015-01-15

    Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

  16. {11-bar 01} twin dislocation structures in evaporated titanium thin films

    International Nuclear Information System (INIS)

    Bursill, L.A.; Peng, Julin; Fan, Xudong; Kasukabe, Y.; Yamada, Y.

    1995-01-01

    High-resolution transmission electron micrographs of { 11-bar 01} interfacial twin dislocations in Ti thin films are reexamined. Computer simulations of the experimental images were obtained using atomic models deduced by Pond, Bacon and Serra (Phil Mag Letts, 1995). Two twin dislocations were analysed, with step heights of 4 x d(K 1 ) and 2 x d (K 1 ), where d(K 1 ) is the spacing of the { 11-bar 01 } planes. Reasonable agreement with the predicted structures was obtained at about 0.17nm resolution. 10 refs., 2 figs

  17. The impact of surface chemistry on the performance of localized solar-driven evaporation system.

    Science.gov (United States)

    Yu, Shengtao; Zhang, Yao; Duan, Haoze; Liu, Yanming; Quan, Xiaojun; Tao, Peng; Shang, Wen; Wu, Jianbo; Song, Chengyi; Deng, Tao

    2015-09-04

    This report investigates the influence of surface chemistry (or wettability) on the evaporation performance of free-standing double-layered thin film on the surface of water. Such newly developed evaporation system is composed of top plasmonic light-to-heat conversion layer and bottom porous supporting layer. Under solar light illumination, the induced plasmonic heat will be localized within the film. By modulating the wettability of such evaporation system through the control of surface chemistry, the evaporation rates are differentiated between hydrophilized and hydrophobized anodic aluminum oxide membrane-based double layered thin films. Additionally, this work demonstrated that the evaporation rate mainly depends on the wettability of bottom supporting layer rather than that of top light-to-heat conversion layer. The findings in this study not only elucidate the role of surface chemistry of each layer of such double-layered evaporation system, but also provide additional design guidelines for such localized evaporation system in applications including desalination, distillation and power generation.

  18. Investigation of AgInS{sub 2} thin films grown by coevaporation

    Energy Technology Data Exchange (ETDEWEB)

    Arredondo, C A; Gordillo, G [Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia); J, Clavijo, E-mail: caarredondoo@unal.edu.c, E-mail: ggordillog@unal.edu.c [Departamento de Quimica, Universidad Nacional de Colombia, Bogota, Cr.30 N0 45-03 (Colombia)

    2009-05-01

    AgInS{sub 2} thin films were grown on soda-lime glass substrates by co-evaporation of the precursors in a two-step process. X-ray diffraction (XRD) measurements indicated that these compounds grow in different phases and with different crystalline structure depending upon the deposition conditions. However, through a parameter study, conditions were found to grow thin films containing only the AgInS{sub 2} phase with chalcopyrite type structure. In samples containing a mixture of several phases, the contribution in percentage terms of each phase to the whole compound was estimated with the help of the PowderCell simulation package. It was also found that the AgInS{sub 2} films present p-type conductivity, a high absorption coefficient (greater than 10{sub 4} cm{sub -1}) and an energy band gap Eg of about 1.95 eV, indicating that this compound has good properties to perform as absorbent layer in thin film tandem solar cells. The effect of the deposition conditions on the optical and morphological properties was also investigated through spectral transmitance and atomic force microscopy (AFM) measurements.

  19. Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode

    International Nuclear Information System (INIS)

    Patel, S.S.; Patel, B.H.; Patel, T.S.

    2008-01-01

    An Al/p-AgGaTe 2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe 2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Structural, linear and nonlinear optical properties of co-doped ZnO thin films

    Science.gov (United States)

    Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

    2016-01-01

    Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

  1. Investigation into short-range order, electric conductivity and optical absorption edge of indium selenide thin amorphous films

    International Nuclear Information System (INIS)

    Bilyj, M.N.; Didyk, G.V.; Stetsiv, Ya.I.; Yurechko, R.Ya.

    1980-01-01

    Thin amorphous films of InSe have been obtained by the method of discrete vacuum evaporation of about 10 -2 Pa. The short-range order is investigated according to the radial distribution curves. The temperature and film thickness are shown to affect the character of conductivity. The width of the forbidden band determined by the fundamental absorption edge is found to depend on the time of film annealing

  2. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    Science.gov (United States)

    Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

    2014-01-01

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ˜1.78eV with high absorption coefficient ˜106/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80-330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ˜2.6Ωm and the films showed good photo response.

  3. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    International Nuclear Information System (INIS)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

    2017-01-01

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  4. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook, E-mail: cwjeon@ynu.ac.kr

    2017-04-30

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  5. Influence of Magnetic Field on Electric Charge Transport in Holomiun Thin Films at Low Temperatures

    Directory of Open Access Journals (Sweden)

    Jan Dudas

    2005-01-01

    Full Text Available Holmium thin films were prepared by evaporation in ultrahigh vacuum (UHV and high precision electrical resistance measurements were performed on them as well as on holomium bulk sample in the wide temperature range from 4,2 K up to the room temperature. Electric charge transport is profoundly influenced by the magnetic structure at low temperatures and a "knee-like" resistance anomaly was observed near the transportation from paramagnetic state to basal-plane spiral structure in bulk with the Neel temperature TN=128,9 K and below ~ 122 K in thin Ho films in a thickness range from 98 nm to 215 nm. Unexpected resistance minimum at ~ 9 K and a slope´s charge of the R vs. T curve near ~ 170 K was observed in 215 nm thin film. Application of magnetic field parallel to the substrate and thin film plane for temperatures below ~ 150 K caused the decrease of resistence value with increasing magnetic flux density. Increasing suppression of the TN value up to ~ 5 K with increasing flux density value up to 5 T was observed in Ho films

  6. Variation of the optical energy gap with {gamma}-radiation and thickness in Bi-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Al-Houty, L.; Kassem, M.E.; Abdel Kader, H.I. [Qatar Univ., Doha (Qatar). Dept. of Physics

    1995-02-01

    The effect of {gamma}-radiation and thickness on the optical energy gap of Bi-thin films has been investigated by measuring their optical absorbance. The measurements were carried out on thermally evaporated films having thicknesses in the range 5-20 nm. Different {gamma}-radiation doses were used ranging from 0-300 Mrad. The optical energy gap as well as the absorption coefficient were found to be {gamma}-dose dependent. (author).

  7. Variation of the optical energy gap with γ-radiation and thickness in Bi-thin films

    International Nuclear Information System (INIS)

    Al-Houty, L.; Kassem, M.E.; Abdel Kader, H.I.

    1995-01-01

    The effect of γ-radiation and thickness on the optical energy gap of Bi-thin films has been investigated by measuring their optical absorbance. The measurements were carried out on thermally evaporated films having thicknesses in the range 5-20 nm. Different γ-radiation doses were used ranging from 0-300 Mrad. The optical energy gap as well as the absorption coefficient were found to be γ-dose dependent. (author)

  8. How do evaporating thin films evolve? Unravelling phase-separation mechanisms during solvent-based fabrication of polymer blends

    KAUST Repository

    Wodo, Olga; Ganapathysubramanian, Baskar

    2014-01-01

    © 2014 AIP Publishing LLC. Solvent-based fabrication is a flexible and affordable approach to manufacture polymer thin films. The properties of products made from such films can be tailored by the internal organization (morphology) of the films. However, a precise knowledge of morphology evolution leading to the final film structure remains elusive, thus limiting morphology control to a trial and error approach. In particular, understanding when and where phases are formed, and how they evolve would provide rational guidelines for more rigorous control. Here, we identify four modes of phase formation and subsequent propagation within the thinning film during solvent-based fabrication. We unravel the origin and propagation characteristics of each of these modes. Finally, we construct a mode diagram that maps processing conditions with individual modes. The idea introduced here enables choosing processing conditions to tailor film morphology characteristics and paves the ground for a deeper understanding of morphology control with the ultimate goal of precise, yet affordable, morphology manipulation for a large spectrum of applications.

  9. How do evaporating thin films evolve? Unravelling phase-separation mechanisms during solvent-based fabrication of polymer blends

    KAUST Repository

    Wodo, Olga

    2014-10-13

    © 2014 AIP Publishing LLC. Solvent-based fabrication is a flexible and affordable approach to manufacture polymer thin films. The properties of products made from such films can be tailored by the internal organization (morphology) of the films. However, a precise knowledge of morphology evolution leading to the final film structure remains elusive, thus limiting morphology control to a trial and error approach. In particular, understanding when and where phases are formed, and how they evolve would provide rational guidelines for more rigorous control. Here, we identify four modes of phase formation and subsequent propagation within the thinning film during solvent-based fabrication. We unravel the origin and propagation characteristics of each of these modes. Finally, we construct a mode diagram that maps processing conditions with individual modes. The idea introduced here enables choosing processing conditions to tailor film morphology characteristics and paves the ground for a deeper understanding of morphology control with the ultimate goal of precise, yet affordable, morphology manipulation for a large spectrum of applications.

  10. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  11. Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

    2012-10-01

    Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

  12. Influence of annealing temperature and environment on the properties of indium tin oxide thin films

    International Nuclear Information System (INIS)

    Wang, R X; Beling, C D; Fung, S; Djurisic, A B; Ling, C C; Kwong, C; Li, S

    2005-01-01

    Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300 deg. C but drastically drops at 400 deg. C when they are annealed in forming gas (mixed N 2 and H 2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400 deg. C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films

  13. Double switching hysteresis loop in a single layer Fe3Pt alloy thin films

    International Nuclear Information System (INIS)

    Nahid, M.A.I.; Suzuki, Takao

    2008-01-01

    The Fe 3 Pt alloy thin films were epitaxially grown on MgO(100) substrate by e-beam evaporation. The films were partially ordered at the substrate deposition temperature above 350 deg. C. These partially ordered films exhibit very large biaxial magnetic anisotropy constant in the order of 10 5 J/m 3 and produce double switching in the hysteresis loops. The difference of the switching field of these films can be up to about 3 x 10 5 A/m by tuning the angle of the applied field with respect to the easy axes. This double switching behavior stems from the large biaxial magnetic anisotropy of the films

  14. Photoelectron spectroscopy study of thin Ag films deposited on to amorphous In–Ga–Zn–O surface

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Se Jun [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Baik, Jaeyoon; Ha, Taekyun; Park, Chong Do [Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Shin, Hyun-Joon, E-mail: shj001@postech.ac.kr [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Chung, JaeGwan; Lee, Jaecheol [A E Group, Samsung Advanced Institute of Technology, Giheung-Gu, Yongin-Si, GyeingGi-Do 449-712 (Korea, Republic of)

    2014-11-03

    Ag was thermally evaporated onto amorphous In–Ga–Zn–O (a-IGZO) thin film, and the Ag-thickness (< 0.3 nm)-dependent chemical states of the Ag-deposited a-IGZO thin-film surfaces were investigated by high-resolution X-ray photoelectron spectroscopy. As Ag layer thickness increased, Ag 3d shifted towards the lower binding energy (BE) side and In 3d developed a lower-BE component; however, O 1s, Ga 3d, and Zn 3d showed much smaller spectral feature changes than Ag 3d or In 3d. The analysis suggests that Ag atoms preferentially interact and share electrons with In atoms. The Ag 4d split feature at the valence band and the metallic states near the Fermi edge were noticeably visible when the Ag thickness was greater than 0.1 nm. - Highlights: • Ag was deposited on a-IGZO thin film using thermal evaporation method. • Chemical state changes of Ag-deposited a-IGZO were investigated by XPS. • As Ag layer thickness increased, In 3d developed a lower-BE component. • As Ag layer thickness increased, Ag 3d shifted towards the lower BE side. • Ag atoms preferentially interact and share electrons with In atoms.

  15. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    International Nuclear Information System (INIS)

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  16. Electrical and optical properties of thermally-evaporated thin films from A{sub 2}[TiO(C{sub 2}O{sub 4}){sub 2}] (A = K, PPh{sub 4}) and 1,8-dihydroxyanthraquinone

    Energy Technology Data Exchange (ETDEWEB)

    Carbia-Ruelas, E. [Coordinacion de Ingenieria Mecatronica. Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico); Sanchez-Vergara, M.E., E-mail: elena.sanchez@anahuac.mx [Coordinacion de Ingenieria Mecatronica. Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico); Garcia-Montalvo, V. [Instituto de Quimica, Universidad Nacional Autonoma de Mexico. Circuito Exterior, Ciudad Universitaria, 04510, Mexico, D. F (Mexico); Morales-Saavedra, O.G. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, CCADET-UNAM. A. P. 70-186, Coyoacan, 04510, Mexico, D. F (Mexico); Alvarez-Bada, J.R. [Coordinacion de Ingenieria Mecatronica. Facultad de Ingenieria, Universidad Anahuac Mexico Norte. Avenida Universidad Anahuac 46, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico)

    2011-02-01

    In this work, the synthesis of molecular materials formed from A{sub 2}[TiO(C{sub 2}O{sub 4}){sub 2}] (A = K, PPh4) and 1,8 dihydroxyanthraquinone is reported. The synthesized materials were characterized by atomic force microscopy (AFM), infrared (IR) and ultraviolet-visible (UV-vis) spectroscopy. IR spectroscopy showed that the molecular-material thin-films, deposited by vacuum thermal evaporation, exhibit the same intra-molecular vibration modes as the starting powders, which suggests that the thermal evaporation process does not alter the initial chemical structures. Electrical transport properties were studied by dc conductivity measurements. The electrical activation energies of the complexes, which were in the range of 0.003-1.16 eV, were calculated from Arrhenius plots. Optical absorption studies in the wavelength range of 190-1090 nm at room temperature showed that the optical band gaps of the thin films were around 1.9-2.3 eV for direct transitions Eg{sub d}. The cubic NLO effects were substantially enhanced for materials synthesized from K{sub 2}[TiO(C{sub 2}O{sub 4}){sub 2}], where {chi}{sup (3)} (-3{omega}; {omega}, {omega}, {omega}) values in the promising range of 10{sup -12} esu have been evaluated.

  17. Influence of boat material on the structure, stoichiometry and optical properties of gallium sulphide films prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Rao, Pritty; Kumar, Sanjiv; Sahoo, N.K.

    2015-01-01

    The paper describes the deposition of thin films of gallium sulphide on soda-lime glass substrates by thermal evaporation of chemically synthesized powders consisting of gallium sulphide and gallium oxyhydroxide from a Mo or Ta boat and the evolution of their compositional, structural and optical properties on vacuum annealing. The films deposited from Mo or Ta boats possessed distinctly different properties. The Mo-boat evaporated pristine films were amorphous, transparent (α ∼ 10 3  cm −1 ) in visible region and had a direct band gap of about 3.2 eV. Vacuum annealing at 723 K brought about their crystallization predominantly into cubic γ-Ga 2 S 3 and a blue shift by about 0.2 eV. The Ta-boat evaporated pristine films were also amorphous but were absorbing (α ∼ 10 4  cm −1 ) and had a direct band gap of about 2.1 eV. These crystallized into hexagonal GaS and experienced a blue shift by more than 1.0 eV on vacuum annealing at 723 K. The dissimilar properties of the two kinds of films arose mainly from their different atomic compositions. The Mo-boat evaporated pristine films contained Ga and S in ∼1:1 atomic proportions while those prepared using Ta-boat were Ga rich which impaired their transmission characteristics. The former composition favoured the stabilization of S rich gallium sulphide (Ga 2 S 3 ) phase while the latter stabilised S deficient species, GaS. Besides inducing crystallization, vacuum annealing at 723 K also caused the diffusion of Ga in excess of atomic composition of the phase formed, into soda-lime glass which improved the optical transmission of the films. Gallium oxyhydroxide, an inevitable co-product of the chemical synthetic process, in the evaporant introduced oxygen and hydrogen impurities in the films which do not seem to significantly influence their optical properties. - Highlights: • Gallium sulphide films are prepared by thermal evaporation from a Mo or Ta boat. • Mo-boat prepared pristine film has Ga

  18. Growth Of Organic Semiconductor Thin Films with Multi-Micron Domain Size and Fabrication of Organic Transistors Using a Stencil Nanosieve.

    Science.gov (United States)

    Fesenko, Pavlo; Flauraud, Valentin; Xie, Shenqi; Kang, Enpu; Uemura, Takafumi; Brugger, Jürgen; Genoe, Jan; Heremans, Paul; Rolin, Cédric

    2017-07-19

    To grow small molecule semiconductor thin films with domain size larger than modern-day device sizes, we evaporate the material through a dense array of small apertures, called a stencil nanosieve. The aperture size of 0.5 μm results in low nucleation density, whereas the aperture-to-aperture distance of 0.5 μm provides sufficient crosstalk between neighboring apertures through the diffusion of adsorbed molecules. By integrating the nanosieve in the channel area of a thin-film transistor mask, we show a route for patterning both the organic semiconductor and the metal contacts of thin-film transistors using one mask only and without mask realignment.

  19. Oxygen vacancy induced room temperature ferromagnetism in (In1-xNix)2O3 thin films

    Science.gov (United States)

    Chakraborty, Deepannita; Kaleemulla, S.; Kuppan, M.; Rao, N. Madhusudhana; Krishnamoorthi, C.; Omkaram, I.; Reddy, D. Sreekantha; Rao, G. Venugopal

    2018-05-01

    Nickel doped indium oxide thin films (In1-xNix)2O3 at x = 0.00, 0.03, 0.05 and 0.07 were deposited onto glass substrates by electron beam evaporation technique. The deposited thin films were subjected to annealing in air at 250 °C, 350 °C and 450 °C for 2 h using high temperature furnace. A set of films were vacuum annealed at 450 °C to study the role of oxygen on magnetic properties of the (In1-xNix)2O3 thin films. The thin films were subjected to different characterization techniques to study their structural, chemical, surface, optical and magnetic properties. All the synthesized air annealed and vacuum annealed films exhibit body centered cubic structure without any secondary phases. No significant change in the diffraction peak position, either to lower or higher diffraction angles has been observed. The band gap of the films decreased from 3.73 eV to 3.63 eV with increase of annealing temperature from 250 °C to 450 °C, in the presence of air. From a slight decrease in strength of magnetization to a complete disappearance of hysteresis loop has been observed in pure In2O3 thin films with increasing the annealing temperature from 250 °C to 450 °C, in the presence of air. The (In1-xNix)2O3 thin films annealed under vacuum follow a trend of enhancement in the strength of magnetization to increase in temperature from 250 °C to 450 °C. The hysteresis loop does not disappear at 450 °C in (In1-xNix)2O3 thin films, as observed in the case of pure In2O3 thin films.

  20. Development of Falling Film Heat Transfer Coefficient for Industrial Chemical Processes Evaporator Design

    KAUST Repository

    Shahzad, Muhammad Wakil; Burhan, Muhammad; Ng, Kim Choon

    2018-01-01

    In falling film evaporators, the overall heat transfer coefficient is controlled by film thickness, velocity, liquid properties and the temperature differential across the film layer. This chapter presents the heat transfer behaviour for evaporative

  1. Effect of oxygen on the surface morphology of CuGaS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Smaili, F., E-mail: fethi.smaili@voila.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2009-08-01

    Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS{sub 2} thin films by two different types. In this study, CuGaS{sub 2} thin films were deposited by vacuum thermal evaporation of CuGaS{sub 2} powder on heated glass substrates at 200 deg. C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 deg. C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS{sub 2} material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS{sub 2} thin films. It was found that annealing of CuGaS{sub 2} film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.

  2. Fabrication of Quench Condensed Thin Films Using an Integrated MEMS Fab on a Chip

    Science.gov (United States)

    Lally, Richard; Reeves, Jeremy; Stark, Thomas; Barrett, Lawrence; Bishop, David

    Atomic calligraphy is a microelectromechanical systems (MEMS)-based dynamic stencil nanolithography technique. Integrating MEMS devices into a bonded stacked array of three die provides a unique platform for conducting quench condensed thin film mesoscopic experiments. The atomic calligraphy Fab on a Chip process incorporates metal film sources, electrostatic comb driven stencil plate, mass sensor, temperature sensor, and target surface into one multi-die assembly. Three separate die are created using the PolyMUMPs process and are flip-chip bonded together. A die containing joule heated sources must be prepared with metal for evaporation prior to assembly. A backside etch of the middle/central die exposes the moveable stencil plate allowing the flux to pass through the stencil from the source die to the target die. The chip assembly is mounted in a cryogenic system at ultra-high vacuum for depositing extremely thin films down to single layers of atoms across targeted electrodes. Experiments such as the effect of thin film alloys or added impurities on their superconductivity can be measured in situ with this process.

  3. Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

    Science.gov (United States)

    Ali, H. M.; Abd El-Raheem, M. M.; Megahed, N. M.; Mohamed, H. A.

    2006-08-01

    Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10-3 Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.

  4. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  5. In situ nanocalorimetry of thin glassy organic films

    Science.gov (United States)

    León-Gutierrez, E.; Garcia, G.; Lopeandía, A. F.; Fraxedas, J.; Clavaguera-Mora, M. T.; Rodríguez-Viejo, J.

    2008-11-01

    In this work, we describe the design and first experimental results of a new setup that combines evaporation of liquids in ultrahigh vacuum conditions with in situ high sensitivity thermal characterization of thin films. Organic compounds are deposited from the vapor directly onto a liquid nitrogen cooled substrate, permitting the preparation and characterization of glassy films. The substrate consists of a microfabricated, membrane-based nanocalorimeter that permits in situ measurements of heat capacity under ultrafast heating rates (up to 105 K/s) in the temperature range of 100-300 K. Three glass forming liquids—toluene, methanol, and acetic acid—are characterized. The spikes in heat capacity related to the glass-transition temperature, the fictive temperature and, in some cases, the onset temperature of crystallization are determined for several heating rates.

  6. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  7. Characteristics of heat transfer fouling of thin stillage using model thin stillage and evaporator concentrates

    Science.gov (United States)

    Challa, Ravi Kumar

    The US fuel ethanol demand was 50.3 billion liters (13.3 billion gallons) in 2012. Corn ethanol was produced primarily by dry grind process. Heat transfer equipment fouling occurs during corn ethanol production and increases the operating expenses of ethanol plants. Following ethanol distillation, unfermentables are centrifuged to separate solids as wet grains and liquid fraction as thin stillage. Evaporator fouling occurs during thin stillage concentration to syrup and decreases evaporator performance. Evaporators need to be shutdown to clean the deposits from the evaporator surfaces. Scheduled and unscheduled evaporator shutdowns decrease process throughput and results in production losses. This research were aimed at investigating thin stillage fouling characteristics using an annular probe at conditions similar to an evaporator in a corn ethanol production plant. Fouling characteristics of commercial thin stillage and model thin stillage were studied as a function of bulk fluid temperature and heat transfer surface temperature. Experiments were conducted by circulating thin stillage or carbohydrate mixtures in a loop through the test section which consisted of an annular fouling probe while maintaining a constant heat flux by electrical heating and fluid flow rate. The change in fouling resistance with time was measured. Fouling curves obtained for thin stillage and concentrated thin stillage were linear with time but no induction periods were observed. Fouling rates for concentrated thin stillage were higher compared to commercial thin stillage due to the increase in solid concentration. Fouling rates for oil skimmed and unskimmed concentrated thin stillage were similar but lower than concentrated thin stillage at 10% solids concentration. Addition of post fermentation corn oil to commercial thin stillage at 0.5% increments increased the fouling rates up to 1% concentration but decreased at 1.5%. As thin stillage is composed of carbohydrates, protein, lipid

  8. GALVANIC MAGNETIC PROPERTIES OF BISMUTH THIN FILMS DOPED WITH TELLURIUM MADE BY THERMAL VACUUM EVAPORATION

    Directory of Open Access Journals (Sweden)

    V. A. Komarov

    2013-01-01

    Full Text Available The influence of n-type impurity of tellurium (concentration range from 0.005 atomic % Te to 0.15 atomic % Te on galvanic magnetic properties (resistivity, magnetic resistance and Hall constant of Bi thin films with various thicknesses was studied. The properties were measured in temperature range from 77 to 300 K. It was established that the classical size effect in the films is significant and decreases with higher concentration of Te impurity. The analysis of experimental results was carried out in approximation of the law of Jones-Schoenberg dispersion for Bi films doped with tellurium. Calculation of concentration and mobility of charge carriers in the studied films was made.

  9. Facile and Scalable Fabrication of Highly Efficient Lead Iodide Perovskite Thin-Film Solar Cells in Air Using Gas Pump Method.

    Science.gov (United States)

    Ding, Bin; Gao, Lili; Liang, Lusheng; Chu, Qianqian; Song, Xiaoxuan; Li, Yan; Yang, Guanjun; Fan, Bin; Wang, Mingkui; Li, Chengxin; Li, Changjiu

    2016-08-10

    Control of the perovskite film formation process to produce high-quality organic-inorganic metal halide perovskite thin films with uniform morphology, high surface coverage, and minimum pinholes is of great importance to highly efficient solar cells. Herein, we report on large-area light-absorbing perovskite films fabrication with a new facile and scalable gas pump method. By decreasing the total pressure in the evaporation environment, the gas pump method can significantly enhance the solvent evaporation rate by 8 times faster and thereby produce an extremely dense, uniform, and full-coverage perovskite thin film. The resulting planar perovskite solar cells can achieve an impressive power conversion efficiency up to 19.00% with an average efficiency of 17.38 ± 0.70% for 32 devices with an area of 5 × 2 mm, 13.91% for devices with a large area up to 1.13 cm(2). The perovskite films can be easily fabricated in air conditions with a relative humidity of 45-55%, which definitely has a promising prospect in industrial application of large-area perovskite solar panels.

  10. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    International Nuclear Information System (INIS)

    Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

    2014-01-01

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ∼1.78eV with high absorption coefficient ∼10 6 /m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80–330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ∼2.6Ωm and the films showed good photo response

  11. Modification of magnetoresistance and magnetic properties of Ni thin films by adding Dy interlayer

    Science.gov (United States)

    Vorobiov, S. I.; Shabelnyk, T. M.; Shutylieva, O. V.; Pazukha, I. M.; Chornous, A. M.

    2018-03-01

    The paper reports the influence of dysprosium (Dy) interlayer addition on structure, magnetoresistance and magnetic properties of nickel (Ni) thin films. Trilayer film systems Ni/Dy/Ni have been prepared by alternate electron-beam evaporation. It is demonstrated that all as-prepared and annealed Ni thin films have face-centered cubic structure. The composition of the samples after addition of the Dy interlayer corresponds to the combination of face-centered cubic (Ni) and hexagonal close-packed (Dy) structures. The structure of Ni/Dy/Ni film systems changes from amorphous to polycrystalline when Dy interlayer thickness (t Dy) is more than 15 nm. The value of magnetoresistance increases with the adding the Dy interlayer in both longitudinal and transverse geometries, meanwhile the anisotropic character of magnetoresistance field dependences retained. The saturation and reversal magnetizations are reduced with the increasing of the Dy thickness interlayer, while the coercivity takes the minimum value at t Dy = 15 nm. The following increasing of t Dy leads to increasing of coercivity near to three times. This result indicates the influence of the crystal structure on the magnetic properties of Ni thin films at adding Dy interlayer.

  12. Particle Induced X-ray Emission (PIXE) Approach for the Quantification of Thin Al Films

    International Nuclear Information System (INIS)

    Younes, G; Zahraman, K; Nsouli, B; Soueidan, M; Ferro, G

    2008-01-01

    Particle Induced X-ray Emission (PIXE) has been used as a fast and non-destructive technique for sensitive characterization of ultra thin Al films deposited by evaporation onto Si substrate. In this work the PIXE technique was optimized, using proton beam at different energies and different angles of incidence, for the characterization of ultra thin Al films (few nanometers) deposited onto Si substrate. The PIXE results showed that a proton beam of 300 keV under tilting angle of 80 degree permits an accurate determination of Al with high sensitivity within few minutes of acquisition time and a LOD of less than 0.2 nm. The LOD versus energy and tilting angle will be presented and discussed. (author)

  13. Generation of electrical defects in ion beam assisted deposition of Cu(In,Ga)Se2 thin film solar cells

    International Nuclear Information System (INIS)

    Zachmann, H.; Puttnins, S.; Daume, F.; Rahm, A.; Otte, K.

    2011-01-01

    Thin films of Cu(In,Ga)Se 2 (CIGS) absorber layers for thin film solar cells have been manufactured on polyimide foil in a low temperature, ion beam assisted co-evaporation process. In the present work a set of CIGS thin films was produced with varying selenium ion energy. Solar cell devices have been manufactured from the films and characterized via admittance spectroscopy and capacitance-voltage profiling to determine the influence of the selenium ion energy on the electric parameters of the solar cells. It is shown that the impact of energetic selenium ions in the CIGS deposition process leads to a change in the activation energy and defect density and also in the spatial distribution of electrically active defects. For the interpretation of the results two defect models are taken into account.

  14. Molecular dynamics study on evaporation and condensation characteristics of thin film liquid Argon on nanostructured surface in nano-scale confinement

    Science.gov (United States)

    Hasan, Mohammad Nasim; Rabbi, Kazi Fazle; Sabah, Arefiny; Ahmed, Jannat; Kuri, Subrata Kumar; Rakibuzzaman, S. M.

    2017-06-01

    Investigation of Molecular level phase change phenomena are becoming important in heat and mass transfer research at a very high rate, driven both by the need to understand certain fundamental phenomena as well as by a plethora of new and forthcoming applications in the areas of micro- and nanotechnologies. Molecular dynamics simulation has been carried out to go through the evaporation and condensation characteristics of thin liquid argon film in Nano-scale confinement. In the present study, a cuboid system is modeled for understanding the Nano-scale physics of simultaneous evaporation and condensation. The cuboid system consists of hot and cold parallel platinum plates at the bottom and top ends. The fluid comprised of liquid argon film at the bottom plate and vapor argon in between liquid argon and upper plate of the domain. Three different simulation domains have been created here: (i) Both platinum plates are considered flat, (ii) Upper plate consisting of transverse slots of low height and (iii) Upper plate consisting of transverse slots of bigger height. Considering hydrophilic nature of top and bottom plates, two different high temperatures of the hot wall was set and an observation was made on normal and explosive vaporizations and their impacts on thermal transport. For all the structures, equilibrium molecular dynamics (EMD) was performed to reach equilibrium state at 90 K. Then the lower wall is set to two different temperatures like 110 K and 250 K for all three models to perform non-equilibrium molecular dynamics (NEMD). For vaporization, higher temperature of the hot wall led to faster transport of the liquid argon as a cluster moving from hot wall to cold wall. But excessive temperature causes explosive boiling which seems not good for heat transportation because of less phase change. In case of condensation, an observation was made which indicates that the nanostructured transverse slots facilitate condensation. Two factors affect the rate of

  15. Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

    Science.gov (United States)

    Hassanien, A. S.; Akl, Alaa A.

    2016-01-01

    Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

  16. Ellipsometric study and application of rubrene thin film in organic Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Liang; Deng, Jinxiang, E-mail: jdeng@bjut.edu.cn; Gao, Hongli; Yang, Qianqian; Kong, Le; Cui, Min; Zhang, Zijia

    2016-12-01

    Highlights: • The optical constants of rubrene were studied by ellipsometry spectroscopic. • The α reveals direct allowed transition with corresponding energy 2.21 eV. • A Schottky diodes based on rubrene were fabricated. • The basic device parameters were determined by the I–V measurement. - Abstract: Rubrene thin film was deposited by thermal evaporation technique under high vacuum (∼10{sup −4} Pa). The film surface morphology was characterized by atomic force microscopy (AFM). Ellipsometric studies on rubrene thin film were presented for understanding its growth and optical characteristics by the Classical-Oscillator model. The analysis of the absorption coefficient (α) revealed the direct allowed transition with corresponding energy 2.21 eV of the rubrene film. In order to exploring the rubrene applications, Al/rubrene/ITO Schottky diode was fabricated. The basic device parameters, barrier height and ideality factor were determined by the I–V measurement. The log(I)–log(V) characteristic indicated three distinct regions. These regions followed ohmic conduction, TCL conduction and SCLC conduction mechanisms.

  17. An investigation on linear and non-linear optical constants of nano-spherical CuPc thin films for optoelectronic applications

    En