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Sample records for thin films cdte

  1. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  2. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  3. Nanoparticle precursor route to low-temperature spray deposition of CdTe thin films

    International Nuclear Information System (INIS)

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Jones, K.M.; Ginley, D.S.

    1995-01-01

    In this letter we report a nanoparticle-derived route to CdTe thin films. CdTe nanoparticles 39±8 A in diameter, prepared by an organometallic route, were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. CdTe thin-film deposition was realized by spraying a nanoparticle/butanol colloid onto SnO 2 -coated glass substrates at variable susceptor temperatures. The resultant CdTe films were characterized by atomic force microscopy, x-ray diffraction, and UV-Vis spectroscopy. Smooth and dense CdTe thin films were obtained using growth temperatures ∼200 degree C less than conventional spray pyrolysis. A growth temperature dependence upon CdTe grain size formation and crystallinity was observed by atomic force microscopy and x-ray diffraction. UV-Vis characterization revealed a transformation in the optical properties of the CdTe thin films as a function of growth temperature. copyright 1995 American Institute of Physics

  4. Structural and optical characterization of CdTe quantum dots thin films

    International Nuclear Information System (INIS)

    El-Nahass, M.M.; Youssef, G.M.; Noby, Sohaila Z.

    2014-01-01

    Highlights: • CdTe QDs are prepared by hot injection method. • Thermally evaporated CdTeQDs thin films were prepared. • Structural characterization and analysis were done. • Optical parameters were studied. - Abstract: Cadmium telluride quantum dots (CdTe QDs) have been synthesized using hot-injection chemical technique. The CdTe QDs thin films were deposited onto optical flat fused quartz substrates using thermal evaporation technique. The CdTe QDs powder and the as deposited films were characterized using X-ray diffraction and high resolution transmission electron microscope (HRTEM). The X-ray analysis shows that both CdTe QDs powder and the as deposited films crystallize in cubic zinc-blende type structure with lattice parameter 6.46 Å and 6.45 Å, respectively. The X-ray calculation shows that the average crystallite size of the as deposited CdTe QDs films varied from 1.1 nm for the powder to 2.3 nm for the thin film. The HRTEM examination of the as deposited films shows that the average particle size vary from 2.5 nm for the powder to 2.7 nm for the thin film. For the as deposited films, the dependence of (αhν) 2 on the incident photon energy indicates that the optical transitions within the film are allowed direct with energies observed at E g1 ≅2eV and E g2 ≅2.3eV which attributed to quantum confinement effect. The optical band gap increases from 1.5 eV for microstructure CdTe to 2 eV for nanostructure quantum dots which corresponding to wavelength(620 nm) so it is a great benefit to use CdTe quantum dots as solar harvesting devices application in solar spectrum region (400–800 nm). Urbach energy is calculated and found to be 360 meV which is higher than microstructure CdTe. The refractive index and refractive index dispersion of the as deposited CdTe QDs film has been calculated from transmission and reflection spectra. It has been found that the refractive index is reduced from (2.66) for microstructure CdTe to be (1.7) for CdTe quantum

  5. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    International Nuclear Information System (INIS)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al 2 O 3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al 2 O 3 . FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  6. Nonstoichiometric composition shift in physical vapor deposition of CdTe thin films

    Science.gov (United States)

    Chin, Ken K.; Cheng, Zimeng; Delahoy, Alan E.

    2015-05-01

    While it is being debated whether Cd vacancy is an effective p-dopant in CdTe, and whether CdTe thin film in solar energy application should be Cd-deficient or Cd-rich, in the theory of CdTe physical vapor deposition (PVD) it has been assumed that both the source material and the thin film product is stoichiometric. To remediate the lack of effective theory, a new PVD model for CdTe photovoltaic (PV) modules is presented in this work, in which the composition of the CdTe thin film under growth is a parameter determined by the source CdTe composition as well as the growth condition. The solid phase Cd1-δTe1+δ compound under deposition temperature is treated as a solid solution with a mole of excess pure Te or Cd as solute and one mole of congruently grown CdTe as solvent. Assuming that the vapor pressure of Te2 can be calculated by using the law of solid solution PTe=H0+aH1+a2H2 round the congruent composition, where the molar number a and the constants H0, H1 and H2 as functions of temperature T are extracted from the experimental data. Thus, the mole fraction of solute in the grown CdTe thin film as well as the growth rate, as a function of the solute mole fraction in the source CdTe can be determined.

  7. Determination of dispersion parameters of thermally deposited CdTe thin film

    Science.gov (United States)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  8. Determination of dispersion parameters of thermally deposited CdTe thin film

    Energy Technology Data Exchange (ETDEWEB)

    Dhimmar, J. M., E-mail: bharatpmodi@gmail.com; Desai, H. N.; Modi, B. P. [Department of Physics, Veer Narmad South Gujarat University, Surat, Gujarat (India)

    2016-05-23

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10{sup −6} torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm – 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  9. Determination of dispersion parameters of thermally deposited CdTe thin film

    International Nuclear Information System (INIS)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-01-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10 −6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm – 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  10. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  11. Degradation processes occur on the CdTe thin films solar elements

    CERN Document Server

    Mirsagatov, S A; Makhmudov, M; Muzapharova, S A

    1999-01-01

    It is shown the Cu in CdTe polycristalline films is diffusing on the complex mechanism. By bringing of W atoms in thin CdTe layers it is possible to operate diffusion's speed of Cu atoms. Initiation of the (Cu sup + W sub C sub d sup -) complexes under the conditions N(W sub C sub d sup -)>=N(Cu sub i sup +) hardly reduce the diffusion velocity of Cu atoms.

  12. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Gaire, C.; Rao, S.; Riley, M.; Chen, L.; Goyal, A.; Lee, S.; Bhat, I.; Lu, T.-M.; Wang, G.-C.

    2012-01-01

    Single crystal-like CdTe thin film has been grown by metalorganic chemical vapor deposition on cube-textured Ni(100) substrate. Using X-ray pole figure measurements we observed the epitaxial relationship of {111} CdTe //{001} Ni with [11 ¯ 0] CdTe //[010] Ni and [112 ¯ ] CdTe //[100] Ni . The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 1.6% in the [11 ¯ 0] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction images show that the CdTe domains are 30° oriented from each other. These high structural quality films may find applications in low cost optoelectronic devices.

  13. Growth of cubic and hexagonal CdTe thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, S.K. [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India)]. E-mail: 628@ssplnet.org; Tiwari, Umesh [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Raman, R. [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Prakash, Chandra [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Krishna, Vamsi [Centre for Energy Studies, Indian Institute of Technology, New Delhi 110 016 (India); Dutta, Viresh [Centre for Energy Studies, Indian Institute of Technology, New Delhi 110 016 (India); Zimik, K. [Laser Science and Technology Centre, Metcalfe House, Delhi 110 054 (India)

    2005-02-01

    The paper reports the growth of cadmium telluride (CdTe) thin films by pulsed laser deposition (PLD) using excimer laser (KrF, {lambda}=248 nm, 10 Hz) on corning 7059 glass and SnO{sub 2}-coated glass (SnO{sub 2}/glass) substrates at different substrate temperatures (T{sub s}) and at different laser energy pulses. Single crystal target CdTe was used for deposition of thin films. With 30 min deposition time, 1.8- to {approx}3-{mu}m-thick films were obtained up to 200 deg. C substrate temperature. However, the film re-evaporates from the substrate surface at temperatures >275 deg. C. Atomic force microscopy (AFM) shows an average grain size {approx}0.3 {mu}m. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all pulse energies except at 200 mJ. At 200 mJ laser energy, the films show hexagonal phase. Optical properties of CdTe were also investigated and the band gap of CdTe films were found as 1.54 eV for hexagonal phase and {approx}1.6 eV for cubic phase.

  14. Synthesis and optical characterization of nanocrystalline CdTe thin films

    Science.gov (United States)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  15. Spectrum-per-Pixel Cathodoluminescence Imaging of CdTe Thin-Film Bevels

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John; Al-Jassim, Mowafak M.; Burst, James; Guthrey, Harvey L.; Metzger, Wyatt K.

    2016-11-21

    We conduct T=6 K cathodoluminescence (CL) spectrum imaging with a nano-scale electron beam on beveled surfaces of CdTe thin-films at different critical stages of standard CdTe device fabrication. The through-thickness total CL intensity profiles are consistent with a reduction in grain boundary recombination due to the CdCl2 treatment. Color-coded maps of the low-temperature luminescence transition energies reveal that CdTe thin films have remarkably non-uniform opto-electronic properties, which depend strongly on sample processing history. The grain-to-grain S content in the interdiffused CdTe/CdS region is estimated from a sample size of thirty-five grains, and the S content in adjacent grains varies significantly in CdCl2-treated samples. A low-temperature luminescence model is developed to interpret spectral behavior at grain boundaries and grain interiors.

  16. Temperature dependence of dc photoconductivity in CdTe thin films

    Indian Academy of Sciences (India)

    Keeping the above aspects in mind, an experimental study on pho- toconductivity processes in pure CdTe thin films ... form of a Faraday caze to keep undesirable noise at minimum. 3. Results and discussion ..... represented in table 1 which show a decreasing trend with increasing ambient temperature. Howeverγ < 1 at any ...

  17. Growth techniques used to develop CDS/CDTE thin film solar cells ...

    African Journals Online (AJOL)

    Growth techniques used to develop CDS/CDTE thin film solar cells: a review. ... Techniques such as molecular beam epitaxy (MBE), metal organic chemical vapour deposition (MOCVD) called melt growth or Bridgman are well known as high quality semiconductor growth techniques. One of the limitations of these ...

  18. Investigation of deep level defects in CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  19. Nanocrystalline CdTe thin films by electrochemical synthesis

    Directory of Open Access Journals (Sweden)

    Ramesh S. Kapadnis

    2013-03-01

    Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

  20. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

    2013-09-03

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

  1. Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Shamara [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Vatavu, Sergiu, E-mail: svatavu@usm.md [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Evani, Vamsi; Khan, Md; Bakhshi, Sara; Palekis, Vasilios [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Rotaru, Corneliu [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Ferekides, Chris [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States)

    2015-05-01

    A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12-130 K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47-1.50 eV are determined by transitions involving shallow D and A states and the 1.36x-1.37x eV band is due to band to level transitions. Deep transitions at 1.042 eV and 1.129 eV are due to radiative transitions to levels determined by CdTe native defects. - Highlights: • Photoluminescense (PL) of CdTe thin films is present in the 0.8-1.6 eV spectral region. • High intensity excitonic peaks are among the main radiative paths. • Radiative transitions at 1.36x eV are assisted by dislocations caused levels. • Extremal Cd/Te overpressure ratios enhance PL for 1.497 eV, 1.486 eV, 1.474 eV bands. • PL intensity reaches its max value for the 0.45 and 1.25 Cd/Te overpressure ratios.

  2. Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

    International Nuclear Information System (INIS)

    Tariq, G.H.; Anis-ur-Rehman, M.

    2011-01-01

    The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

  3. Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

    OpenAIRE

    Powalla, Michael; Bonnet, Dieter

    2007-01-01

    Thin-film photovoltaic modules based on Cu-In-Ga-Se-S (CIS) and CdTe are already being produced with high-quality and solar conversion efficiencies of around 10%, with values up to 14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules...

  4. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  5. Study of CdTe and HgCdTe thin films obtained by electrochemical methods

    International Nuclear Information System (INIS)

    Guillen, C.

    1990-01-01

    Cadmium telluride polycrystalline thin films were fabricated on SnO 2 -coated glass substrates by potentiostatic electrodeposition and characterized by X-ray diffraction, energy dispersive X-ray analyses (EDAX), optical and electrical measurements. The films dseposited at potentials more positive than -0.65 V vs.SCE were p-type but those deposited at more negative potentials were n-type. All CdTe thin films showed a band-gap energy about 1.45 eV and a large absorption coeffici-ent (a=10 5 cm -1 ) above de band edge. The addition of even small amounts of mercury to the CdTe produces higuer conductivity values and lower band-gap energies. We have prepared HgCdTe thin films where the band-gap energies ranged between 0.93 and 0.88 eV depending on the ratio of mercury to cadmium. Heat treatment at 300 0 C increases the crystalline diameter and alter the composition of the electrodeposited films, a decrease of the resistivity values was also observed. (Author)

  6. Optical Absorption Enhancement in CdTe Thin Films by Microstructuration of the Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Jesús Rangel-Cárdenas

    2017-06-01

    Full Text Available In this work, the reflectance, optical absorption, and band gap have been determined for CdTe thin films grown on planar and microstructured substrates. The treated surface was prepared by laser ablation of a silicon wafer, forming holes in a periodic arrangement. Thin films were grown by pulsed laser ablation on silicon samples kept at 200 °C inside a vacuum chamber. The presence of CdTe was verified with X-ray diffraction and Raman spectroscopy indicating a nanocrystalline zinc blended structure. The optical absorption of thin films was calculated by using the Fresnel laws and the experimental reflectance spectrum. Results show that reflectance of 245 nm films deposited on modified substrates is reduced by up to a factor of two than the obtained on unchanged silicon and the optical absorption is 16% higher at ~456 nm. Additionally, it was determined that the band gap energy for planar and microstructured films is about 1.44 eV for both cases.

  7. Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ahmet PEKSÖZ

    2016-08-01

    Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

  8. Spatially Resolved Cathodoluminescence of CdTe Thin Films and Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M. J.; Metzger, W.; Gessert, T. A.; Albin, D. S.; Al-Jassim, M. M.

    2003-05-01

    We have investigated the spatial distribution of different transitions identified in the emission spectra of CdTe thin films and solar cells by cathodoluminescence spectroscopic imaging (CLSI). Prior to back-contact deposition, the spectra are dominated by excitons (X) and donor-to-acceptor (DAP) transitions. After contacting, Cu acceptor states are found in addition to the X and DAP recombination processes. A very systematic behavior found in CdTe is that DAP transitions occur preferentially at grain boundaries (GBs). The distribution of these states responsible for the passivation of GBs is not affected by further processing, although additional levels participate in the recombination process. We believe that this stability is one of the reasons for the success of thin-film CdTe solar cells. Estimates of the densities of different donors and acceptors participating in the recombination process are possible from the analysis of the evolution of the emission spectra with the excitation level. It is found that the back contact suppresses some intrinsic acceptors (associated with the A center) near the back-contact interface and, therefore, Cu acceptor states should be responsible for the p-typeness of the back surface more than a reduction of compensation. CLSI measurements are shown to be helpful in understanding the physics of back-contact formation.

  9. Polycrystalline CdTe thin film mini-modules monolithically integrated by fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Bosio, A., E-mail: alessio.bosio@unipr.it [Department of Physics and Earth Sciences, University of Parma, via G.P. Usberti 7/A, 43124 Parma (Italy); Sozzi, M. [Department of Information Engineering, University of Parma, via G.P. Usberti 181/A, 43124 Parma (Italy); Menossi, D. [Department of Physics and Earth Sciences, University of Parma, via G.P. Usberti 7/A, 43124 Parma (Italy); Selleri, S.; Cucinotta, A. [Department of Information Engineering, University of Parma, via G.P. Usberti 181/A, 43124 Parma (Italy); Romeo, N. [Department of Physics and Earth Sciences, University of Parma, via G.P. Usberti 7/A, 43124 Parma (Italy)

    2014-07-01

    The CdTe thin film technology for photovoltaics (PV) is attractive because of its potential low cost and good performance. In thin film technology the efficiency of large area cells can be maintained if small segments are interconnected in series to reduce the photocurrent and resistance losses. In respect to this, the scribing process is critical for the performance of the device. Today, fiber lasers represent the most advanced and cheap technology that can be used in PV industry to carry out the cuts, needed for the monolithic integration, at different deposition stages. We will present our results on the scribing of CdTe thin film solar cells by means of fiber lasers, with pulse duration of a few nanoseconds and solid state lasers in the picosecond regime. The quality of the scribing was evaluated by optical and scanning electron microscopy. Finally, mini-modules with a total area of 10 × 10 cm{sup 2} were fabricated, in which the cells were interconnected in series by means of a scribing system, equipped with a fiber laser with the same characteristics of the system mounted on production lines. The mini-modules were characterized by photovoltaic and electrical measurements. - Highlights: • Study of laser scribing of CdTe-based mini-modules • Comparison between different lasers working in nanosecond and picosecond regimes • The laser scribing process was transferred to industrial production.

  10. Effect of electric field on spray deposited CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vamsi Krishna, K.; Dutta, V.; Paulson, P.D

    2003-11-01

    CdTe thin films have been deposited using spray pyrolysis with and without electric field. The improvement in the film properties with the electric field is observed which is mainly due to the reduction of droplet size. The presence of CdTeO{sub 3} peaks in the X-ray diffraction pattern for films deposited without electric field at 350 deg. C is attributed to the slow dissociation of complexes containing Cd and Te ions on the substrate. The reduction in the droplet size under the influence of electric field and faster dissociation of droplets at high temperature leads to complete pyrolytic reaction for a nearly oxide free CdTe film formation. Energy dispersive X-ray analysis indicates stoichiometric Cd and Te atomic concentrations, with oxygen and chlorine impurities in varying amount for different substrate temperatures, with and without electric field. The presence of chlorine gives rise to an intense photoluminescence peak at 1.40 eV along with a weak peak at 0.84 eV. The intensities of both peaks diminish when the films are prepared with the electric field, due to reduction of chlorine concentration and morphological changes in the films.

  11. Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

    Directory of Open Access Journals (Sweden)

    Michael Powalla

    2007-01-01

    14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules. This contribution provides an overview of the basic technologies for CdTe and CIS modules, the research and development (R&D issues, production technology and capacities, the module performance in long-term outdoor testing, and their use in installations.

  12. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gaire, C. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Rao, S. [Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Riley, M. [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Chen, L. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Goyal, A. [Oak Ridge National Lab, Oak ridge, TN, 37831-6116 (United States); Lee, S. [US Army ARDEC Benet Labs, Watervliet, NY, 12189-4050 (United States); Bhat, I. [Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Lu, T.-M. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Wang, G.-C., E-mail: wangg@rpi.edu [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States)

    2012-01-01

    Single crystal-like CdTe thin film has been grown by metalorganic chemical vapor deposition on cube-textured Ni(100) substrate. Using X-ray pole figure measurements we observed the epitaxial relationship of {l_brace}111{r_brace}{sub CdTe}//{l_brace}001{r_brace}{sub Ni} with [11{sup Macron }0]{sub CdTe}//[010]{sub Ni} and [112{sup Macron }] {sub CdTe}//[100]{sub Ni}. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 1.6% in the [11{sup Macron }0] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction images show that the CdTe domains are 30 Degree-Sign oriented from each other. These high structural quality films may find applications in low cost optoelectronic devices.

  13. Impacts of Temperature on the Performance of Cdte Based Thin-Film Solar Cell

    Science.gov (United States)

    Asaduzzaman, Md.; Newaz Bahar, Ali; Maksudur Rahman Bhuiyan, Mohammad; Habib, Md. Ahsan

    2017-08-01

    In this investigation, the effect of temperature on the performance of CdTe based thin film solar cells has been studied. The parameters such as open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor and efficiency η determines the performance of solar cell. And an important diode parameter, reverse saturation current density, J 0 controls the impacts of temperature on the performance parameters. The reverse saturation current density of the CdTe photovoltaic cell, J 0 = CT 3exp(-qEg /kT) was determinedas optimum for C = 17.90 mAcm -2 K 3 yields CT 3 = 4.74 × 108 mAcm -2. In this case, 298 K is considered to be more suitable temperature to achieve optimized Voc, Jsc, FF, and η calculated for AM1.5G illumination spectra. The maximum attained values of performance parameters are compared with the experimental and theoretical results in the literature of CdTe solar cells. Moreover, the rate of change in performance parameters due to temperature are also measured and compared with the results available in the earlier published works.

  14. Characterization of Cu-doped CdTe thin films prepared by closed space sublimation (css) techniques

    International Nuclear Information System (INIS)

    Abbas, N.; Shah, N.; Ali, A.; Maqsood, A.

    2005-01-01

    Cadmium telluride (CdTe) thin films of different thickness are deposited on the microscopic slides of water-white glass substrates using the close spaced sublimation (CSS) method. The films are doped with Cu by immersion in Cu (NO/sub 3/)2-H/sub 2/O solution for different times and the effect of immersion time and subsequent heating in vacuum on the electrical, structural and optical properties are presented. The XRD and SEM results show that appropriate Cu doping would be favorable to the growth of CdTe crystallite. The Hall Effect measurements indicate that the conductivity of the films could be improved by Cu doping. (author)

  15. Supply risks associated with CdTe and CIGS thin-film photovoltaics

    International Nuclear Information System (INIS)

    Helbig, Christoph; Bradshaw, Alex M.; Kolotzek, Christoph; Thorenz, Andrea; Tuma, Axel

    2016-01-01

    Highlights: • Supply risks associated with thin film photovoltaic technologies are considered. • Eleven supply risk indicators are used to evaluate Cd, Te, Cu, In, Ga, Se and Mo. • Indicator weighting based on peer assessment and an Analytic Hierarchy Process. • Various possibilities for the aggregation of elemental supply risks discussed. • Aggregated results show a marginally lower supply risk for CdTe than for CIGS. - Abstract: As a result of the global warming potential of fossil fuels there has been a rapid growth in the installation of photovoltaic generating capacity in the last decade. While this market is dominated by crystalline silicon, thin-film photovoltaics are still expected to make a substantial contribution to global electricity supply in future, due both to lower production costs and to recent increases in conversion efficiency. At present, cadmium telluride (CdTe) and copper-indium-gallium diselenide (CuIn x Ga 1−x Se 2 ) seem to be the most promising materials and currently have a share of ≈9% of the photovoltaic market. An expected stronger market penetration by these thin-film technologies raises the question as to the supply risks associated with the constituent elements. Against this background, we report here a semi-quantitative, relative assessment of mid- to long-term supply risk associated with the elements Cd, Te, Cu, In, Ga, Se and Mo. In this approach, the supply risk is measured using 11 indicators in the four categories “Risk of Supply Reduction”, “Risk of Demand Increase”, “Concentration Risk” and “Political Risk”. In a second step, the single indicator values, which are derived from publicly accessible databases, are weighted relative to each other specifically for the case of thin film photovoltaics. For this purpose, a survey among colleagues and an Analytic Hierarchy Process (AHP) approach are used, in order to obtain a relative, element-specific value for the supply risk. The aggregation of these

  16. 13.9%-efficient CdTe polycrystalline thin-film solar cells with an infrared transmission of {approx} 50%

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Zhou, J.; Duda, A.; Keane, J.C.; Gessert, T.A.; Yan, Y.; Noufi, R. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2005-07-01

    To fabricate a high-efficiency polycrystalline thin-film tandem cell, the most critical work is to make a high-efficiency top cell ( > 15%) with high bandgap (E{sub g} = 1.5-1.8 eV) and high transmission (T > 70%) in the near-infrared (NIR) wavelength region. The CdTe cell is one of the candidates for the top cell, because CdTe state-of-the-art single-junction devices with efficiencies of more than 16% are available, although its bandgap (1.48 eV) is slightly lower for a top cell in a current-matched dual-junction device. In this paper, we focus on the development of a: (1) thin, low-bandgap Cu{sub x}Te transparent back-contact; and (2) modified CdTe device structure, including three novel materials: cadmium stannate transparent conducting oxide (TCO), ZnSnO{sub x} buffer layer, and nanocrystalline CdS:O window layer developed at NREL, as well as the high-quality CdTe film, to improve transmission in the NIR region while maintaining high device efficiency. We have achieved an NREL-confirmed 13.9%-efficient CdTe transparent solar cell with an infrared transmission of {approx}50% and a CdTe/CIS polycrystalline mechanically stacked thin-film tandem cell with an NREL-confirmed efficiency of 15.3%. (Author)

  17. Synthesis and characterization of electrochemically deposited nanocrystalline CdTe thin films

    International Nuclear Information System (INIS)

    Singh, Ragini Raj; Painuly, Diksha; Pandey, R.K.

    2009-01-01

    Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures. In this work we prepared the nanocrystalline CdTe thin films on indium tin oxide coated glass substrate from aqueous acidic bath at the deposition temperature 50 ± 1 deg. C. The films were grown potentiostatically from -0.60 V to -0.82 V with respect to saturated calomel reference electrode. The structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), atomic force microscopy (AFM), and UV-vis spectroscopy respectively and cyclic voltammetery. The structural and optical studies revealed that films are nanocrystalline in nature and possess cubic phase, also the films are preferentially oriented along the cubic (1 1 1) plane. The effect of cadmium composition on the deposited morphology was also investigated. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass approximation and tight binding approximation. It is shown that the experimentally determined absorption edges depart from the theoretically calculated values.

  18. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  19. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  20. Physical properties of spray deposited CdTe thin films: PEC performance

    International Nuclear Information System (INIS)

    Nikale, V. M.; Shinde, S. S.; Bhosale, C. H.; Rajpure, K.Y.

    2011-01-01

    p-CdTe thin films were prepared by spray pyrolysis under different ambient conditions and characterized using photoelectrochemical (PEC), X-ray diffraction (XRD), scanning electron microscopy, energy-dispersive analysis by X-ray (EDAX), and optical transmission studies. The different preparative parameters viz solution pH, solution quantity, substrate temperature and solution concentration have been optimized by the PEC technique in order to get good-quality photosensitive material. XRD analysis shows the polycrystalline nature of the film, having cubic structure with strong (111) orientation. Micrographs reveal that grains are uniformly distributed over the surface of the substrate indicating the well-defined growth of polycrystalline CdTe thin film. The EDAX study for the sample deposited at optimized preparative parameters shows the nearly stoichiometric Cd : Te ratio. Optical absorption shows the presence of direct transition with band gap energy of 1.5 eV Deposited films exhibit the highest photocurrent of 2.3 mA, a photovoltage of 462 mV, a 0.48 fill factor and 3.4% efficiency for the optimized preparative parameters. (semiconductor materials)

  1. Commercial production of thin-film CdTe photovoltaic modules. 1995 annual report

    Energy Technology Data Exchange (ETDEWEB)

    Brog, T.K. [Golden Photon, Inc., CO (United States)

    1997-02-01

    This report presents a general overview of progress made in Golden Photon Inc.`s commercial production of thin-film CdTe photovoltaic modules. It describes the improvement in the number of batch runs processed through substrate deposition, all inter-connection, and encapsulation process steps; a progressive increase in the total number of panels processed each month; an improvement in cumulative process yields; and the continual attention given to modifying operating parameters of each major process step. The report also describes manpower status and staffing issues. The description of the status of subcontract progress includes engineering design; process improvement and development; cost improvement and raw materials; environment, safety, and health; and manufacturing cost and productivity optimization. Milestones and deliverables are also described.

  2. Electroluminescence of thin-film CdTe solar cells and modules

    Science.gov (United States)

    Raguse, John Michael

    Thin-film photovoltaics has the potential to be a major source of world electricity. Mitigation of non-uniformities in thin-film solar cells and modules may help improve photovoltaic conversion efficiencies. In this manuscript, a measurement technique is discussed in detail which has the capability of detecting such non-uniformities in a form useful for analysis. Thin-film solar cells emit radiation while operating at forward electrical bias, analogous to an LED, a phenomena known as electroluminescence (EL). This process relatively is inefficient for polycrystalline CdTe devices, on the order of 10-4%, as most of the energy is converted into heat, but still strong enough for many valuable measurements. A EL system was built at the Colorado State University Photovoltaics Laboratory to measure EL from CdTe cells and modules. EL intensity normalized to exposure time and injection current density has been found to correlate very well with the difference between ideal and measured open-circuit voltage from devices that include a GaAs cell, an AlGaAs LED, and several CdTe cells with variations in manufacturing. Furthermore, these data points were found to be in good agreement when overlaid with calibrated data from two additional sources. The magnitude of the inverse slope of the fit is in agreement with the thermal voltage and the intercept was found to have a value near unity, in agreement with theory. The expanded data set consists of devices made from one of seven different band gaps and spans eight decades of EQELED efficiencies. As expected, cells which exhibit major failure of light-dark J-V superposition did not follow trend of well-behaved cells. EL images of selected defects from CdTe cells and modules are discussed and images are shown to be highly sensitive to defects in devices, since the intensity depends exponentially on the cells' voltages. The EL technique has proven to be a useful high-throughput tool for screening of cells. In addition to EL images

  3. Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

    Energy Technology Data Exchange (ETDEWEB)

    Vasileska, Dragica [Arizona State Univ., Tempe, AZ (United States)

    2017-08-17

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of

  4. Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

    International Nuclear Information System (INIS)

    Dzhafarov, T D; Caliskan, M

    2007-01-01

    Diffusion of Au and its effects on structural, electrical and optical properties of CdTe films fabricated by the close-spaced sublimation technique have been investigated. Diffusion of Au was studied in the range 400-550 deg. C using energy dispersive x-ray fluorescence analysis. Au-doped and un-doped CdTe films were characterized by x-ray diffraction (XRD), electrical and optical absorption measurements. The temperature dependence of the diffusion coefficient of Au in CdTe films is described as D = 4.4 x 10 -7 exp(-0.54 eV/kT). The mechanism of Au diffusion in polycrystalline CdTe films is attributed to the fast migration of Au along grain boundaries with simultaneous penetration into grains and settling on Cd-vacancies. It is supposed that the weak influence of Au diffusion on XRD patterns of CdTe films can be explained by dispersal of Au atoms preferentially on Cd-vacancies owing to proximity of the covalent radius of Au and Cd. Au atoms, placed on Cd-vacancies (Au Cd ) during fast cooling from diffusion temperature to room temperature, show an acceptor behaviour with an energy level about of E v + 0.2 eV. The nature of this level is discussed

  5. Temperature dependence of dc photoconductivity in CdTe thin films

    Indian Academy of Sciences (India)

    Therefore, it clearly supports the non-existence of physical barrier at CdTe ... presence of potential surface barrier at the electrode–film interface. ... Pradip Kumar Kalita clearly indicates the increase in density of grain boundary states as reported in earlier communication [12]. In these smaller grained films, therefore, the ...

  6. The effects of anode material type on the optoelectronic properties of electroplated CdTe thin films and the implications for photovoltaic application

    Science.gov (United States)

    Echendu, O. K.; Dejene, B. F.; Dharmadasa, I. M.

    2018-03-01

    The effects of the type of anode material on the properties of electrodeposited CdTe thin films for photovoltaic application have been studied. Cathodic electrodeposition of two sets of CdTe thin films on glass/fluorine-doped tin oxide (FTO) was carried out in two-electrode configuration using graphite and platinum anodes. Optical absorption spectra of films grown with graphite anode displayed significant spread across the deposition potentials compared to those grown with platinum anode. Photoelectrochemical cell result shows that the CdTe grown with graphite anode became p-type after post-deposition annealing with prior CdCl2 treatment, as a result of carbon incorporation into the films, while those grown with platinum anode remained n-type after annealing. A review of recent photoluminescence characterization of some of these CdTe films reveals the persistence of a defect level at (0.97-0.99) eV below the conduction band in the bandgap of CdTe grown with graphite anode after annealing while films grown with platinum anode showed the absence of this defect level. This confirms the impact of carbon incorporation into CdTe. Solar cell made with CdTe grown with platinum anode produced better conversion efficiency compared to that made with CdTe grown using graphite anode, underlining the impact of anode type in electrodeposition.

  7. Thin-film-based CdTe photovoltaic module characterization: Measurements and energy prediction improvement

    Science.gov (United States)

    Lay-Ekuakille, A.; Arnesano, A.; Vergallo, P.

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m2. About 37 000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m2 and from -1 to 40 W/m2 from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  8. Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

    Science.gov (United States)

    Lay-Ekuakille, A; Arnesano, A; Vergallo, P

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  9. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

    Science.gov (United States)

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.; Sathe, Vasant; Ganesan, V.

    2014-12-01

    In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (Ed) parameters, dielectric constants, plasma frequency, and oscillator energy (Eo) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 104 Ω cm was obtained for the CdTe:Cu (3 wt. %) film.

  10. Preparation and performance of thin film CdTe mini-module

    Energy Technology Data Exchange (ETDEWEB)

    Jingquan, Zhang; Lianghuan, Feng; Zhi, Lei; Yaping, Cai; Wei, Li; Lili, Wu; Bing, Li; Wei, Cai; Jiagui, Zheng [College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610064 (China)

    2009-06-15

    The film deposition process and integrated technology of the CdTe mini-module with high efficiency are key steps to manufacture large-area modules. In this paper, CdS, CdTe and ZnTe:Cu films with a substrate area of 7 x 10 cm{sup 2} were deposited by chemical bath deposition, close-spaced sublimation and vacuum co-evaporation, respectively. The uniform films were prepared after their thicknesses, structures and electronic characteristics were studied as the function of deposition parameters. The films of SnO{sub 2}:F, CdTe, etc, were scribed by Kr-lamp-pumped Q-switch YAG:Nd laser. The pumped lamp current, Q-switch frequency and scribing rate were optimized. The scribing efficiency of the base frequency light was compared with that of doubled frequency light. The integrated structure design was optimized after simulating. Then the CdTe mini-module of 7.03% efficiency was gained with a total area of 54 cm{sup 2} and nine integrated elementary cells. (author)

  11. Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications.

    Science.gov (United States)

    Parsai, E Ishmael; Shvydka, Diana; Kang, Jun

    2010-08-01

    The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

  12. Research and development of CdTe based thin film PV solar cells

    Science.gov (United States)

    Diso, Dahiru Garba

    The motivation behind this research is to bring cheap, low-cost and clean energy technologies to the society. Colossal use of fossil fuel has created noticeable pollution problems contributing to climate change and health hazards. Silicon based solar cells have dominated the market but it is cost is high due to the manufacturing process. Therefore, the way forward is to develop thin films solar cells using low-cost attractive materials, grown by cheaper, scalable and manufacturable techniques.The aim and objectives of this work is to develop low-cost, high efficiency solar cell using electrodeposition (ED) technique. The material layers include CdS and ZnTe as the window materials, while the absorber material is CdTe. Fabricating a suitable devices for solar energy conversion (i.e. glass/conducting glass/window material/absorber material/metal) structure. Traditional way of fabricating this structure is to grow window material (CdS) using chemical bath deposition (CBD) and absorber material (CdTe) using electrodeposition. However, CBD is a batch process and therefore creates large volumes of Cd-containing waste solutions each time adding high cost in manufacturing process. This research programme is therefore on development of an "All ED-solar cells" structure.Material studies were carried out using photoelectrochemical (PEC) studies, UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, the electrical characterisation of fully fabricated devices was performed using current-voltage (I-V) and capacitance-voltage (C-V) measurements.This research programme has demonstrated that CdS and ZnTe window materials can be electrodeposited and used in thin film solar cell devices. The CdS electrolytic bath can be used for a period of 7 months without discarding it like in the CBD process which usually has life

  13. Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

    1999-09-30

    ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

  14. Effect of CdCl{sub 2} treatment on structural and electronic property of CdTe thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M.A. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Hossain, M.S.; Aliyu, M.M. [Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Karim, M.R. [Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia); Razykov, T.; Sopian, K. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Amin, N., E-mail: nowshad@eng.ukm.my [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia)

    2013-11-01

    The structural and electrical properties of the magnetron sputtered CdTe thin films with subsequent CdCl{sub 2} solution treatment have been studied with a major focus on the influence of CdCl{sub 2} treatment to achieve high quality thin films. In this study, CdTe films with a thickness of 1.5 to 2 μm have been grown using the magnetron sputtering technique on top of glass substrate at an optimized substrate temperature of 250 °C. Aqueous CdCl{sub 2} concentration varied from 0.3 mol to 1.2 mol with the annealing temperature from 360 °C to 450 °C. The surface roughness of the films increases with the increase of solution concentration, while it fluctuates with the increase of annealing temperature. The density of nucleation centers and the strain increases for the films treated at 360 °C with 0.3 M to1.2 M while the grain growth of the films reduces. However, these strains are released at higher annealing temperatures, resulting in reduced dislocation densities, structural defects as well as increased crystalline property and grain size. The carrier concentration increases with the increase of treated CdCl{sub 2} concentration and subsequent annealing temperature. The highest carrier concentration of 1.05 × 10{sup 14}/cm{sup 3} was found for the CdTe thin films treated with 0.3 M CdCl{sub 2} solution followed by an annealing treatment at 420 °C for 20 min. - Highlights: • CdTe thin films are grown as absorption layers in CdTe solar cells by sputtering. • CdTe film quality in terms of structural and electronic properties is examined. • All growth parameters are optimized in the range of 1.5 to 2 μm CdTe films.

  15. Processing of CdTe thin films by the stacked elemental layer method. Compound formation and physical properties

    Energy Technology Data Exchange (ETDEWEB)

    Cruz, L.R. [Departamento de Engenharia, Macanica e de Materiais, Instituto Militar de Engenharia, Praca General Tiburcio, 80, Urca, 22290-270 RJ Rio de Janeiro (Brazil); Matson, R. [National Renewable Energy Laboratory, 1617 Cole Boulevard, 80401 Golden, CO (United States); De Avillez, R.R. [Pontificia Universidade Catolica, Rua Marques de Sao Vicente, 225, Gavea, 22543-900 RJ Rio de Janeiro (Brazil)

    2001-01-01

    Cadmium telluride (CdTe) thin films have been deposited using the stacked elemental layer (SEL) technique. This process consists of sequentially depositing tellurium and cadmium layers and then annealing the stacks in order to synthesize the compound. The films were characterized using X-ray diffraction (XRD), optical transmittance and reflectance, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The evolution of the thin film reaction and compound formation were studied using X-ray data. The results show that the growth is diffusion-controlled and the activation energy is (82{+-}2) kJ/mol. The effect of the conventional post-synthesis CdCl{sub 2} heat treatment on the physical properties of the films produced is also reported.

  16. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

    2017-01-01

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

  17. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

    2007-01-01

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

  18. Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O2 atmosphere

    International Nuclear Information System (INIS)

    Ding, Chao; Ming, Zhenxun; Li, Bing; Feng, Lianghuan; Wu, Judy

    2013-01-01

    Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O 2 . • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures ( 400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T s ). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O 2 (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O 2 (15 Torr) and at the relatively high T s (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an efficiency of 6.68% was fabricated

  19. SEM, EDS, PL and absorbance study of CdTe thin films grown by CSS method

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Torres, M.E.; Silva-Gonzalez, R.; Gracia-Jimenez, J.M. [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Pue. (Mexico); Casarrubias-Segura, G. [CIE- UNAM, 62580 Temixco, Morelos (Mexico)

    2006-09-22

    Oxygen-doped CdTe films were grown on conducting glass substrates by the close spaced sublimation (CSS) method and characterized using SEM, EDS, photoluminescence (PL) and absorbance. A significant change in the polycrystalline morphology is observed when the oxygen proportion is increased in the deposition atmosphere. The EDS analysis showed that all samples are nonstoichiometric with excess Te. The PL spectra show emission bands associated with Te vacancies (V{sub Te}), whose intensities decrease as the oxygen proportion in the CSS chamber is increased. The oxygen impurities occupy Te vacancies and modify the surfaces states, improving the nonradiative process. (author)

  20. Health, safety and environmental risks from the operation of CdTe and CIS thin-film modules

    International Nuclear Information System (INIS)

    Steinberger, Hartmut

    1998-01-01

    This paper identifies the materials embedded in on a type of CIS (Copper indium diselenide) and four different types of CdTe (cadmium telluride) thin-film modules. It refers to the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments. Estimations for modules accidents on the roof or in the garden of a residential house, e.g. leaching of hazardous materials into water or soil, are given. The outcomes of our estimations show some module materials released into water or oil during leaching accidents. In a worst-case scenario for CdTe modules the leached cadmium concentration in the collected water is estimated to be no higher than the German drinking water limit concentration. For the CIS module scenario the estimated leached element concentrations are about one to two orders of magnitude below the German drinking water limit concentration. For broken CIS and CdTe modules on the ground no critical increase of the natural element concentration is observed after leaching into the soil for 1 year. (Author)

  1. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    Directory of Open Access Journals (Sweden)

    Claudio Davet Gutiérrez-Lazos

    2014-06-01

    Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

  2. Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2017-01-01

    Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

  3. Fabrication of stable large-area thin-film CdTe photovoltaic modules

    Science.gov (United States)

    Nolan, J. F.; Meyers, P. V.

    1993-08-01

    This report highlights the progress made by Solar Cells, Inc. (SCI), in its program to produce 60-cm x 120-cm solar modules based on CdTe films. During the past year, confirmed efficiency has increased to 10.4% (active area) on a 1 sq cm cell, 9.8% (aperture area) on a 64 sq cm 8-cell submodule, and 6.6% (total area) on a 7200 sq cm module. A module measured in-house had a power output of 53 W, for a total-area efficiency of 7.4%. Average efficiency of modules produced is steadily increasing and standard deviation is decreasing; in a limited run of 12 modules, results were 6.3% +/- 0.2%. Field testing has begun; a nominal 1-kW array of 24 modules was set up adjacent to SCI's facilities. Analysis indicates that present modules are limited in efficiency by shunt resistance and optical absorption losses in the glass superstrate. Loss analysis of present devices allows us to project a module efficiency of 11.8%. A third generation deposition method, atmospheric pressure elemental vapor deposition (APEVD), has been brought on-line and has produced good quality CdTe. In addition, SCI is expanding its pro-active safety, health, environmental, and disposal program dealing with issues surrounding cadmium.

  4. Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

    Science.gov (United States)

    Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

    2014-08-01

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  5. Influence of plasma parameters and substrate temperature on the structural and optical properties of CdTe thin films deposited on glass by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Quiñones-Galván, J. G.; Santana-Aranda, M. A.; Pérez-Centeno, A. [Departamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara, Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco C.P. 44430 (Mexico); Camps, Enrique [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, D.F., C.P. 11801 (Mexico); Campos-González, E.; Guillén-Cervantes, A.; Santoyo-Salazar, J.; Zelaya-Angel, O. [Departamento de Física, CINVESTAV-IPN, Apartado Postal 14-740, D. F. C.P. 07360 (Mexico); Hernández-Hernández, A. [Escuela Superior de Apan, Universidad Autónoma del Estado de Hidalgo, Calle Ejido de Chimalpa Tlalayote s/n Colonia Chimalpa, Apan Hidalgo (Mexico); Moure-Flores, F. de [Facultad de Química, Materiales, Universidad Autónoma de Querétaro, Querétaro C.P. 76010 (Mexico)

    2015-09-28

    In the pulsed laser deposition of thin films, plasma parameters such as energy and density of ions play an important role in the properties of materials. In the present work, cadmium telluride thin films were obtained by laser ablation of a stoichiometric CdTe target in vacuum, using two different values for: substrate temperature (RT and 200 °C) and plasma energy (120 and 200 eV). Structural characterization revealed that the crystalline phase can be changed by controlling both plasma energy and substrate temperature; which affects the corresponding band gap energy. All the thin films showed smooth surfaces and a Te rich composition.

  6. High efficiency thin film CdTe and a-Si based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  7. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

    2017-08-15

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL -1 ), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL -1 ). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

    Science.gov (United States)

    Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

    2018-04-01

    The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

  9. Novel patterning of CdS / CdTe thin film with back contacts for ...

    Indian Academy of Sciences (India)

    Murugaiya Sridar Ilango

    2018-03-12

    Mar 12, 2018 ... Patterning of solar cell; thin film; back contact; e-beam lithography. PACS Nos 68.55.–a; 85.40.Hp. 1. Introduction ... So the performance of back contact solar cell is to be tested along with the increased junction area .... 3.1 Descriptive analysis of nanotextured solar cells. The nanopatterned cells have 500 ...

  10. On the carrier transport in metal-insulator-metal structures for CdTe thin film

    International Nuclear Information System (INIS)

    Choi, K.W.; Choi, C.K.

    1982-01-01

    According to the energy band model for the Al-CdTe-Ag sandwich structure, we have investigate to the mechanism of the current limited transport(CLT). As the bias voltage applied to the Alsup(+) and Agsup(+) electrode, the potential barrier difference for this structure was found 0.2eV. From what this results, we conclude that the mechanism of the current limited transport due to the potential barrier of the contact limited current. Not only this phenomena but also the annealing effect of thin film was shown that the distingushable for virgin film. (Author)

  11. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Annual Technical Report, 4 March 1999 - 3 March 2000

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G. (The University of Toledo)

    2001-08-29

    This report describes the research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Implemented a diode-array spectrograph system and used optical emission spectroscopy to help optimize the reactive sputtering of N-doped ZnTe for CdTe back-contact structures. Identified the photoluminescence signatures of various defect states in CdTe related to Cd vacancies, CuCd acceptors, Cu-VCd complexes, and donor-acceptor pairs, and related these states to instabilities in the hole concentration at room temperature. Showed that Cu is an important non-radiative center in CdS, reducing the PL efficiency. Studied band tailing in CdS weakly alloyed with CdTe and CdTe weakly alloyed with CdS. Fabricated superstrate ITO/CdS/CdTe cells on Mo substrates with efficiencies above 7.5%. Collaborated in studies of EXAFS of Cu in CdTe which indicate a Cu-Te bond length of 2.62 {angstrom} or 6.7% shorter than the CdTe, bond in agreement with calculations of Wei et al. Provided assistance to two groups on laser scribing. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films deposited using a wide range of H dilution, observed transition from a-SiGe to {mu}c-SiGe at high H dilution and the impact on cell performances. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films with different Ge contents, suitable for use as component cells of triple-junction devices. Fabricated a-Si-based solar cells on ultra-thin stainless-steel substrate (7.5 micron) and obtained equivalent performance and yield as on the regular SS substrates (127 microns). Comparatively studied the performance of a-Si-based solar cells on SS substrates and on SnO2-coated glass substrates. Studied the performance of p-layers deposited under various deposition conditions for n-i-p type solar cells. Performed an analysis for the component cell current-matching within a

  12. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Annual Technical Report, 4 March 1999 - 3 March 2000; ANNUAL

    International Nuclear Information System (INIS)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2001-01-01

    This report describes the research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Implemented a diode-array spectrograph system and used optical emission spectroscopy to help optimize the reactive sputtering of N-doped ZnTe for CdTe back-contact structures. Identified the photoluminescence signatures of various defect states in CdTe related to Cd vacancies, CuCd acceptors, Cu-VCd complexes, and donor-acceptor pairs, and related these states to instabilities in the hole concentration at room temperature. Showed that Cu is an important non-radiative center in CdS, reducing the PL efficiency. Studied band tailing in CdS weakly alloyed with CdTe and CdTe weakly alloyed with CdS. Fabricated superstrate ITO/CdS/CdTe cells on Mo substrates with efficiencies above 7.5%. Collaborated in studies of EXAFS of Cu in CdTe which indicate a Cu-Te bond length of 2.62(angstrom) or 6.7% shorter than the CdTe, bond in agreement with calculations of Wei et al. Provided assistance to two groups on laser scribing. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films deposited using a wide range of H dilution, observed transition from a-SiGe to(mu)c-SiGe at high H dilution and the impact on cell performances. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films with different Ge contents, suitable for use as component cells of triple-junction devices. Fabricated a-Si-based solar cells on ultra-thin stainless-steel substrate (7.5 micron) and obtained equivalent performance and yield as on the regular SS substrates (127 microns). Comparatively studied the performance of a-Si-based solar cells on SS substrates and on SnO2-coated glass substrates. Studied the performance of p-layers deposited under various deposition conditions for n-i-p type solar cells. Performed an analysis for the component cell current-matching within a triple

  13. Electrodeposition of CdTe thin films onto n-Si(1 0 0): nucleation and growth mechanisms

    International Nuclear Information System (INIS)

    Gomez, H.; Henriquez, R.; Schrebler, R.; Cordova, R.; Ramirez, D.; Riveros, G.; Dalchiele, E.A.

    2005-01-01

    The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1 0 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of -0.200 V to values comprised between -0.515 and -0.600 V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below -0.540 V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D) ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D) diff , both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions

  14. Spectroscopic and microscopic investigation of MBE-grown CdTe (211)B epitaxial thin films on GaAs (211)B substrates

    Science.gov (United States)

    Özden, Selin; Koc, Mumin Mehmet

    2018-03-01

    CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on GaAs (211)B using the molecular beam epitaxy method. Wet chemical etching (Everson method) was applied to the epitaxial films using various concentrations and application times to quantify the crystal quality and dislocation density. Surface characterization of the epitaxial films was achieved using Atomic force microscopy and Scanning electron microscopy (SEM) before and after each treatment. The Energy Dispersive X-Ray apparatus of SEM was used to characterize the chemical composition. Untreated CdTe films show smooth surface characteristics with root mean square (RMS) roughnesses of 1.18-3.89 nm. The thicknesses of the CdTe layers formed were calculated via FTIR spectrometry and obtained by ex situ spectroscopic ellipsometry. Raman spectra were obtained for various temperatures. Etch pit densities (EPD) were measured, from which it could be seen that EPD changes between 1.7 × 108 and 9.2 × 108 cm-2 depending on the concentration of the Everson etch solution and treatment time. Structure, shape and depth of pits resulting from each etch pit implementation were also evaluated. Pit widths varying between 0.15 and 0.71 µm with heights varying between 2 and 80 nm were observed. RMS roughness was found to vary by anything from 1.56 to 26 nm.

  15. Atomic-resolution study of dislocation structures and interfaces in poly-crystalline thin film CdTe using aberration-corrected STEM

    Science.gov (United States)

    Paulauskas, Tadas; Colegrove, Eric; Buurma, Chris; Kim, Moon; Klie, Robert

    2014-03-01

    Commercial success of CdTe-based thin film photovoltaic devices stems from its nearly ideal direct band gap which very effectively couples to Sun's light spectrum as well as ease of manufacturing and low cost of these modules. However, to further improve the conversion efficiency beyond 20 percent, it is important to minimize the harmful effects of grain boundaries and lattice defects in CdTe. Direct atomic-scale characterization is needed in order identify the carrier recombination centers. Likewise, it is necessary to confirm that passivants in CdTe, such as Cl, are able to diffuse and bind to the target defects. In this study, we characterize dislocation structures and grain boundaries in poly-crystalline CdTe using aberration-corrected cold-field emission scanning transmission electron microscopy (STEM). The chemical composition of Shockley partial, Frank and Lomer-Cottrell dislocations is examined via atomic column-resolved X-ray energy dispersive (XEDS) and electron energy-loss spectroscopies (EELS). Segregation of Cl towards dislocation cores and grain boundaries is shown in CdCl2 treated samples. We also investigate interfaces in ultra-high-vacuum bonded CdTe bi-crystals with pre-defined misorientation angles which are intended to mimic grain boundaries. Funded by: DOE EERE Sunshot Award EE0005956.

  16. DC electric and photoelectric measurements of CdTe thin films in Schottky-barrier cells

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, S

    2004-06-15

    Measurements of the temperature dependence of ohmic and space-charge-limited (SCL) currents on thin films of polycrystalline particles of cadmium telluride in Schottky-junction cells have been carried out in air ambient. These cells showed rectification where p-CdTe material was flanked between an ohmic contact (Au) and a blocking contact (Al). At low voltages, the dark current in the forward direction which corresponds to negative potential at the Al electrode varies exponentially with voltage. At higher voltages, two distinct regions of ohmic and SCL conduction limited by a discrete trapping level are determined. Traps with a density of 3.85x10{sup 22} m{sup -3} located at 0.58 eV above the valence band edge have been observed. The thickness dependence in the square-law region has been found to confirm the d{sup -3} law. Values of conversion efficiency as high as 11.3% and open-circuit voltage of 0.77 V have been evaluated from the photo-measurements of J-V characteristic at input power density of 100 mW cm{sup -2}. Space-charge concentrations and barrier heights have been estimated from the capacitance-voltage (C-V) measurements both in dark and under constant illumination. The linearity of the C{sup -2}-V dependence is associated with a homogenous distribution of the impurities inside the space-charge region.

  17. Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

    International Nuclear Information System (INIS)

    Yang, Xiaoyan; Liu, Bo; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    Highlights: • Novel CdS/CdSe composite windows for CdTe cell were prepared by pulsed laser deposition. • SEM images show that CdS/CdSe composite windows are stacking together as the design. • CdTe cells with CdS/CdSe composite windows improved the blue response. • CdTe cells with composite windows show an obvious red shift in the absorption edge. • The volume proportion of CdSe affects the performance of CdTe solar cell. - Abstract: A novel CdS/CdSe composite window structure was designed and then the corresponding films were prepared by pulsed laser deposition as an improved window layer for CdTe-based solar cells. Two types of this composite window structure with 5 cycles and 10 cycles CdS/CdSe respectively both combined with CdS layers were prepared at 200 °C compared with pure CdS window layer and finally were applied into CdTe thin film solar cells. The cross section and surface morphology of the two composite window layers were monitored by using scanning electron microscopy and the result shows that the pulsed laser deposited composite window layers with good crystallinity are stacking together as the design. The devices based on CdS/CdSe composite window layers have demonstrated the enhanced photocurrent collection from both short and long wavelength regions compared to CdS/CdTe solar cell. The efficiency of the best reference CdS/CdTe solar cell was 10.72%. And the device with 5 cycles CdS/CdSe composite window showed efficiency of 12.61% with V OC of 772.92 mV, J SC of 25.11 mA/cm 2 and FF of 64.95%. In addition, there are some differences which exist within the optical transmittance spectra and QE curves between the two CdS/CdSe composite window samples, indicating that the volume proportion of CdSe may influence the performance of CdTe thin film solar cell.

  18. Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Xiaoyan; Liu, Bo; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-03-30

    Highlights: • Novel CdS/CdSe composite windows for CdTe cell were prepared by pulsed laser deposition. • SEM images show that CdS/CdSe composite windows are stacking together as the design. • CdTe cells with CdS/CdSe composite windows improved the blue response. • CdTe cells with composite windows show an obvious red shift in the absorption edge. • The volume proportion of CdSe affects the performance of CdTe solar cell. - Abstract: A novel CdS/CdSe composite window structure was designed and then the corresponding films were prepared by pulsed laser deposition as an improved window layer for CdTe-based solar cells. Two types of this composite window structure with 5 cycles and 10 cycles CdS/CdSe respectively both combined with CdS layers were prepared at 200 °C compared with pure CdS window layer and finally were applied into CdTe thin film solar cells. The cross section and surface morphology of the two composite window layers were monitored by using scanning electron microscopy and the result shows that the pulsed laser deposited composite window layers with good crystallinity are stacking together as the design. The devices based on CdS/CdSe composite window layers have demonstrated the enhanced photocurrent collection from both short and long wavelength regions compared to CdS/CdTe solar cell. The efficiency of the best reference CdS/CdTe solar cell was 10.72%. And the device with 5 cycles CdS/CdSe composite window showed efficiency of 12.61% with V{sub OC} of 772.92 mV, J{sub SC} of 25.11 mA/cm{sup 2} and FF of 64.95%. In addition, there are some differences which exist within the optical transmittance spectra and QE curves between the two CdS/CdSe composite window samples, indicating that the volume proportion of CdSe may influence the performance of CdTe thin film solar cell.

  19. Electrochemical Deposition of CdTe Semiconductor Thin Films for Solar Cell Application Using Two-Electrode and Three-Electrode Configurations: A Comparative Study

    Directory of Open Access Journals (Sweden)

    O. K. Echendu

    2016-01-01

    Full Text Available Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources, respectively. The layers obtained using both configurations exhibit similar structural, optical, and electrical properties with no specific dependence on any particular electrode configuration used. These results indicate that electrochemical deposition (electrodeposition of CdTe and semiconductors in general can equally be carried out using two-electrode system as well as the conventional three-electrode system without compromising the essential qualities of the materials produced. The results also highlight the advantages of the two-electrode configuration in process simplification, cost reduction, and removal of a possible impurity source in the growth system, especially as the reference electrode ages.

  20. Elucidating PID Degradation Mechanisms and In Situ Dark I–V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve; Terwilliger, Kent; VanSant, Kaitlyn; Kempe, Michael; Wohlgemuth, John; Kurtz, Sarah; Olsson, Anders; Propst, Michelle

    2016-11-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.

  1. Comparison of efficiency degradation in polycrystalline-Si and CdTe thin-film PV modules via accelerated lifecycle testing

    Science.gov (United States)

    Lai, T.; Potter, B. G.; Simmons-Potter, K.

    2017-08-01

    Thin-film solar cells normally have the shortest energy payback time due to their simpler mass-production process compared to polycrystalline-Si photovoltaic (PV) modules, despite the fact that crystalline-Si-based technology typically has a longer total lifetime and a higher initial power conversion efficiency. For both types of modules, significant aging occurs during the first two years of usage with slower long-term aging over the module lifetime. The PV lifetime and the return-on-investment for local PV system installations rely on long-term device performance. Understanding the efficiency degradation behavior under a given set of environmental conditions is, therefore, a primary goal for experimental research and economic analysis. In the present work, in-situ measurements of key electrical characteristics (J, V, Pmax, etc.) in polycrystalline-Si and CdTe thin-film PV modules have been analyzed. The modules were subjected to identical environmental conditions, representative of southern Arizona, in a full-scale, industrial-standard, environmental degradation chamber, equipped with a single-sun irradiance source, temperature, and humidity controls, and operating an accelerated lifecycle test (ALT) sequence. Initial results highlight differences in module performance with environmental conditions, including temperature de-rating effects, for the two technologies. Notably, the thin-film CdTe PV module was shown to be approximately 15% less sensitive to ambient temperature variation. After exposure to a seven-month equivalent compressed night-day weather cycling regimen the efficiency degradation rates of both PV technology types were obtained and will be discussed.

  2. Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules: Annual Subcontract Report, September 2004--September 2005

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.

    2006-04-01

    Specific overall objectives of this subcontract are improvement in baseline field performance of manufactured CdTe PV modules while reducing environmental, health and safety risk in the manufacturing environment. Project objectives focus on four broad categories: (1) development of advanced front-contact window layers, (2) improved semiconductor film deposition, (3) development of improved accelerated life test procedures that indicate baseline field performance, and (4) reduction of cadmium-related environmental, health and safety risks. First Solar has significantly increased manufacturing capacity from less than 2 MW/yr to more than 20 MW/yr, while increasing the average module total-area power conversion efficiency from 7% to >9%. First Solar currently manufactures and sells 50-65-W thin-film CdTe PV modules at a rate of about 1.9 MW/month. Sales backlog (booked sales less current inventory divided by production rate) is more than a year. First Solar is currently building new facilities and installing additional equipment to increase production capacity by 50 MW/yr; the additional capacity is expected to come on line in the third quarter of 2006.

  3. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposi- tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous me-.

  4. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 29; Issue 2. Characterization of nanocrystalline ... Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, ...

  5. Study of the Mg incorporation in CdTe for developing wide band gap Cd1−xMgxTe thin films for possible use as top-cell absorber in a tandem solar cell

    International Nuclear Information System (INIS)

    Martínez, Omar S.; Millán, Aduljay Remolina; Huerta, L.; Santana, G.; Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R.; Mathew, X.

    2012-01-01

    Highlights: ► Thin films of Cd 1−x Mg x Te with high spatial uniformity and band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. ► Obtained Cd 1−x Mg x Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. ► XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. ► SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd 1−x Mg x Te with band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 °C. Different experimental techniques such as XRD, UV–vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd 1−x Mg x Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV–vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd 1−x Mg x Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

  6. Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules Annual Technical Report, Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D.H.; Powell, R.C.; Karpov, V.; Grecu, D.; Jayamaha, U.; Dorer, G.L. (First Solar, L.L.C.)

    2001-02-05

    Results and conclusions from Phase II of a three-year subcontract are presented. The subcontract, entitled Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules, is First Solar's portion of the Thin-Film Photovoltaic Partnership Program. The research effort of this subcontract is divided into four areas of effort: (1) process and equipment development, (2) efficiency improvement, (3) characterization and analysis, and (4) environmental, health, and safety. As part of the process and equipment development effort, a new semiconductor deposition system with a throughput of 3 m2/min was completed, and a production line in a new 75,000 ft2 facility was started and is near completion. As part of the efficiency-improvement task, research was done on cells and modules with thin CdS and buffer layers as way to increase photocurrent with no loss in the other photovoltaic characteristics. A number of activities were part of the characterization and analysis task, including developing a new admittance spectroscopy system, with a range of 0.001 Hz to 100 kHz, to characterize cells. As part of the environmental, health, and safety task, the methanol-based CdCl2 process was replaced with aqueous-CdCl2. This change enabled the retention of a De Minimus level of emissions for the manufacturing plant, so no permitting is required.

  7. Optimization of the front contact to minimize short-circuit current losses in CdTe thin-film solar cells

    Science.gov (United States)

    Kephart, Jason Michael

    With a growing population and rising standard of living, the world is in need of clean sources of energy at low cost in order to meet both economic and environmental needs. Solar energy is an abundant resource which is fundamentally adequate to meet all human energy needs. Photovoltaics are an attractive way to safely convert this energy to electricity with little to no noise, moving parts, water, or arable land. Currently, thin-film photovoltaic modules based on cadmium telluride are a low-cost solution with multiple GW/year commercial production, but have lower conversion efficiency than the dominant technology, crystalline silicon. Increasing the conversion efficiency of these panels through optimization of the electronic and optical structure of the cell can further lower the cost of these modules. The front contact of the CdTe thin-film solar cell is critical to device efficiency for three important reasons: it must transmit light to the CdTe absorber to be collected, it must form a reasonably passive interface and serve as a growth template for the CdTe, and it must allow electrons to be extracted from the CdTe. The current standard window layer material, cadmium sulfide, has a low bandgap of 2.4 eV which can block over 20% of available light from being converted to mobile charge carriers. Reducing the thickness of this layer or replacing it with a higher-bandgap material can provide a commensurate increase in device efficiency. When the CdS window is made thinner, a degradation in electronic quality of the device is observed with a reduction in open-circuit voltage and fill factor. One commonly used method to enable a thinner optimum CdS thickness is a high-resistance transparent (HRT) layer between the transparent conducting oxide electrode and window layer. The function of this layer has not been fully explained in the literature, and existing hypotheses center on the existence of pinholes in the window layer which are not consistent with observed results

  8. Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules: Annual Technical Report, September 2003-September 2004

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.

    2004-12-01

    First Solar is actively commercializing CdTe-based thin-film photovoltaics. During the past year, major additions of production capability have been completed, as well as process improvements to achieve higher throughput and efficiency and greater durability. This report presents the results of Phase II of the subcontract, entitled ''Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed for high-volume manufacturing of high-efficiency modules, including exploration of large-area advanced front-contact window layers, improvements of the semiconductor deposition system, advancement in understanding of post-deposition processing steps and accelerated life testing methods, and progress in the environmental, health and safety programs. Work under this subcontract contributes to the overall manufacturing operation. During Phase II, average module efficiency (total area) on the production line was improved from 7.9% to 8.6% due primarily to process optimization. At the same, time production volume for commercial sales increased from 2.5 MW in 2003 to an estimated 6 MW in 2004. Much of the new 25 MW/yr production line has been qualified, and production volume is steadily increasing.

  9. Laser thermoreflectance for semiconductor thin films metrology

    Science.gov (United States)

    Gailly, P.; Hastanin, J.; Duterte, C.; Hernandez, Y.; Lecourt, J.-B.; Kupisiewicz, A.; Martin, P.-E.; Fleury-Frenette, K.

    2012-06-01

    We present a thermoreflectance-based metrology concept applied to compound semiconductor thin films off-line characterization in the solar cells scribing process. The presented thermoreflectance setup has been used to evaluate the thermal diffusivity of thin CdTe films and to measure eventual changes in the thermal properties of 5 μm CdTe films ablated by nano and picosecond laser pulses. The temperature response of the CdTe thin film to the nanosecond heating pulse has been numerically investigated using the finite-difference time-domain (FDTD) method. The computational and experimental results have been compared.

  10. High Throughput Manufacturing of Thin-Film CdTe Photovoltaic Materials; Final Subcontract Report, 16 November 1993-31 December 1998

    International Nuclear Information System (INIS)

    Sandwisch, D.W.

    1999-01-01

    This report describes work performed by Solar Cells, Inc. (SCI), during this Photovoltaic Manufacturing Technology (PVMaT) subcontract. Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. SCI has developed this technology and is preparing to scale its pilot production capabilities to a multi-megawatt level. This four-phase PVMaT subcontract supports these efforts. The work was related to product definition, process definition, equipment engineering, and support programs development. In the area of product definition and demonstration, two products were specified and demonstrated-a grid-connected, frameless, high-voltage product that incorporates a pigtail potting design and a remote low-voltage product that may be framed and may incorporate a junction box. SCI produced a 60.3-W thin-film CdTe module with total-area efficiency of 8.4%; SCI also improved module pass rate on the interim qualification test protocol from less than 20% to 100% as a result of work related to the subcontract. In the manufacturing process definition area, the multi-megawatt manufacturing process was defined, several of the key processes were demonstrated, and the process was refined and proven on a 100-kW pilot line that now operates as a 250-kW line. In the area of multi-megawatt manufacturing-line conceptual design review, SCI completed a conceptual layout of the multi-megawatt lines. The layout models the manufacturing line and predicts manufacturing costs. SCI projected an optimized capacity, two-shift/day operation of greater than 25 MW at a manufacturing cost of below$1.00/W

  11. Landfill waste and recycling: Use of a screening-level risk assessment tool for end-of-life cadmium telluride (CdTe) thin-film photovoltaic (PV) panels

    International Nuclear Information System (INIS)

    Cyrs, William D.; Avens, Heather J.; Capshaw, Zachary A.; Kingsbury, Robert A.; Sahmel, Jennifer; Tvermoes, Brooke E.

    2014-01-01

    Grid-connected solar photovoltaic (PV) power is currently one of the fastest growing power-generation technologies in the world. While PV technologies provide the environmental benefit of zero emissions during use, the use of heavy metals in thin-film PV cells raises important health and environmental concerns regarding the end-of-life disposal of PV panels. To date, there is no published quantitative assessment of the potential human health risk due to cadmium leaching from cadmium telluride (CdTe) PV panels disposed in a landfill. Thus, we used a screening-level risk assessment tool to estimate possible human health risk associated with disposal of CdTe panels into landfills. In addition, we conducted a literature review of potential cadmium release from the recycling process in order to contrast the potential health risks from PV panel disposal in landfills to those from PV panel recycling. Based on the results of our literature review, a meaningful risk comparison cannot be performed at this time. Based on the human health risk estimates generated for PV panel disposal, our assessment indicated that landfill disposal of CdTe panels does not pose a human health hazard at current production volumes, although our results pointed to the importance of CdTe PV panel end-of-life management. - Highlights: • Analysis of possible human health risk posed by disposal of CdTe panels into landfills. • Qualitative comparison of risks associated with landfill disposal and recycling of CdTe panels. • Landfill disposal of CdTe panels does not pose a human health hazard at current production volumes. • There could be potential risks associated with recycling if not properly managed. • Factors other than concerns over toxic substances will likely drive the decisions of how to manage end-of-life PV panels

  12. Research Leading to High Throughput Processing of Thin-Film CdTe PV Module: Phase I Annual Report, October 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.; Meyers, P. V.

    2004-02-01

    Work under this subcontract contributes to the overall manufacturing operation. During Phase I, average module efficiency on the line was improved from 7.1% to 7.9%, due primarily to increased photocurrent resulting from a decrease in CdS thickness. At the same time, production volume for commercial sale increased from 1.5 to 2.5 MW/yr. First Solar is committed to commercializing CdTe-based thin-film photovoltaics. This commercialization effort includes a major addition of floor space and equipment, as well as process improvements to achieve higher efficiency and greater durability. This report presents the results of Phase I of the subcontract entitled''Research Leading to High Throughput Processing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed to begin high-volume manufacturing, including further development of the semiconductor deposition reactor, advancement of accelerated life testing methods and understanding, and improvements to th e environmental, health, and safety programs. Progress in the development of the semiconductor deposition reactor was made in several areas. First, a new style of vapor transport deposition distributor with simpler operational behavior and the potential for improved cross-web uniformity was demonstrated. Second, an improved CdS feed system that will improve down-web uniformity was developed. Third, the core of a numerical model of fluid and heat flow within the distributor was developed, including flow in a 3-component gas system at high temperature and low pressure and particle sublimation.

  13. High-Efficiency Polycrystalline CdTe Thin-Film Solar Cells with an Oxygenated Amorphous CdS (a-CdS:O) Window Layer: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Dhere, R. G.; Yan, Y.; Romero, M. J.; Zhang, Y.; Zhou, J.; DeHart, C.; Duda, A.; Perkins, C.; To, B.

    2002-05-01

    In the conventional CdS/CdTe device structure, the poly-CdS window layer has a bandgap of {approx}2.4 eV, which causes absorption in the short-wavelength region. Higher short-circuit current densities (Jsc) can be achieved by reducing the CdS thickness, but this can adversely impact device open-circuit voltage (Voc) and fill factor (FF). Also, poly-CdS film has about 10% lattice mismatch related to the CdTe film, which limits the improvement of device Voc and FF. In this paper, we report a novel window material: oxygenated amorphous CdS film (a-CdS:O) prepared at room temperature by rf sputtering. The a-CdS:O film has a higher optical bandgap (2.5-3.1 eV) than the poly-CdS film and an amorphous structure. The preliminary device results have demonstrated that Jsc of the CdTe device can be greatly improved while maintaining higher Voc and FF. We have fabricated a CdTe cell demonstrating an NREL-confirmed Jsc of 25.85 mA/cm2 and a total-area efficiency of 15.4%.

  14. Laser applications in thin-film photovoltaics

    OpenAIRE

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2009-01-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are descri...

  15. Technology support for initiation of high-throughput processing of thin-film CdTe PV modules. Phase 1 technical report, March 14, 1995--March 13, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Sasala, R.; Powell, R.; Dorer, G. [Solar Cells, Inc., Toledo, OH (United States)

    1996-06-01

    Progress has been made in the important areas of stability, advanced deposition techniques, efficiency, the back contact, no-contact film diagnostics (photoluminescence) and Cd waste control. The progress in stability has been in both the demonstration of devices maintaining at least 90% of the initial efficiency for over 19,000 hours of continuous light soak and the development of methods which can accurately predict long term behavior based on the first 5,000--10,000 hours of life. Experiments were conducted to determine if device behavior could be accelerated with thermal or voltage stresses. Notable achievements in deposition technology include depositing CdTe on a 3,600 cm{sup 2} substrate at 600 torr and designing and fabricating a new deposition feed system with a remote semiconductor source. The efficiency has been increased on small area devices to 13.3% by decreasing the thickness of the CdS and of the glass substrate. Work also focused on using a high resistivity SnO{sub 2} buffer layer between the TCO and thin CdS to help preserve the open-circuit voltage while increasing the current-density. The back contacting process has been simplified by replacing the wet post-deposition etch with a vapor Te deposition step on small area devices. Results show that the devices perform comparably in efficiency but better in stability under light-soaking and open-circuit conditions. Preliminary studies of the correlation between CdS photoluminescence after the chloride treatment and the final device efficiency have shown a positive correlation which may be applicable for in-line quality control. The final area of progress was through the successful demonstration of preventing at least 99.9% of all incoming Cd from leaving in an uncontrolled manner through the land, air or water.

  16. PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu

    Directory of Open Access Journals (Sweden)

    P. Marwoto

    2012-07-01

    Full Text Available Film tipis CdTe dengan doping tembaga (Cu berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2% terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM dan hasil analisis struktur dengan X-Ray Diffraction (XRD menunjukkan bahwa film CdTe:Cu(2% mempunyai citra permukaan dan struktur kristal yang lebih sempurna dibandingkan film CdTe tanpa doping. Hasil analisis spektrometer fotoluminisensi menunjukkan bahwa film CdTe dan CdTe(2% mempunyai puncak fotoluminisensi pada tiga panjang gelombang yang identik yaitu 685 nm (1,81 eV, 725 nm (1,71 eV dan 740 nm (1,67 eV. Film CdTe dengan doping Cu(2% memiliki intensitas puncak fotoluminisensi yang lebih tajam pada pita energi 1,81 eV dibandingkan dengan film CdTe tanpa doping. Pengukuran arus dan tegangan (I-V menunjukkan bahwa pemberian doping Cu(2% dapat menurunkan resistivitas film dari 8,40x109 Ωcm menjadi 6,92x105 Ωcm. Sebagai absorber sel surya, kualitas film tipis CdTe telah berhasil ditingkatkan dengan pemberian doping Cu(2%.CdTe:Cu(2% thin film has been successfully grown on Indium Tin Oxide (ITO substrates by using dc magnetron sputtering. This study was carried out in order to investigate the effect of Cu(2% doping on the morphologycal structure, crystal structure, photoluminesence, and resistivity of CdTe thin film. Scanning Electron Microscopy (SEM  images and X-Ray Diffraction (XRD results showed that CdTe:Cu(2% thin film has morphologycal and crystal structures more perfect than undoped CdTe film. Photoluminesence spectroscopy results showed that CdTe and CdTe:Cu(2% thin films have luminesence peak at three identical wevelength regions i.e. 685 nm (1.81 eV, 725 nm (1.71 eV and 740 nm (1.67 eV however CdTe:Cu(2% film shows sharper photoluminescence peak at band

  17. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for production of thin-film solar cells and low-cost, large-area modules (Development of technologies for high-reliability CdTe solar cell modules); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The research and development project is implemented for production of low-cost, large-area modules of CdTe solar cells by the high-quality film-making process and high-function patterning, and the FY 1999 results are reported. The research program for the large-area TCO film-making technologies involves investigations on improvement of SnO{sub 2} film quality by the mist method and continuous film-making, which lead to continuous, stable production of 34 substrates of low resistance of 9.7{omega} on the average. The program for production of the large-area, thin-film CdS/CdTe solar cells involves production of TCO and CdS by the mist method, and patterning of the laminated TCO/CdS film by laser scribing. The CdTe film is formed by the atmospheric pressure CSS method, and treated with CdCl{sub 2} to improve its crystallinity. The CdTe film is patterned by sand blasting, and provided with the carbon and silver electrodes by screen printing, to complete the cell. The process is totally effected at the atmospheric pressure, needing no vacuum device. The CdTe solar cell assembly (130 cells connected in series, opening area: 5,413cm{sup 2}), fabricated on a trial basis, achieves a conversion efficiency of 10%. (NEDO)

  18. CdTe devices and method of manufacturing same

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  19. How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

    2016-10-25

    It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

  20. Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

    Directory of Open Access Journals (Sweden)

    Subhash Chander

    2018-03-01

    Full Text Available The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111 while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells. Keywords: CdTe thin film, Microstructural, Optoelectrical, Thermal evaporation

  1. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  2. On the doping problem of CdTe films: The bismuth case

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

    2008-01-01

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

  3. Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules: Final Technical Report, April 1998 - October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D. H.; Powell, R. C.

    2002-04-01

    This report describes the significant progress made in four areas of this subcontract: process and equipment development; efficiency improvement; characterization and analysis; and environmental, health, and safety. As part of the process and equipment development effort, vapor-transport deposition (VTD) was implemented first on a 60-cm-web pilot-production system, then on a 120-cm-web high-throughput coater. Deposition of CdS and CdTe films at a throughput of 3 m2/min was demonstrated, and more than 56,000 plates (each 0.72 m2) were coated -- 16 times the total number coated prior to the start of the contract. Progress was also made in the conversion efficiency and yield of both standard and next-generation modules, with data from more than 3000 sequentially deposited modules having an average total-area conversion efficiency of 7% and next-generation modules produced with efficiency as high as 9.3% (10.15% aperture-area efficiency as measured by NREL). Successful implementation o f in-situ CdS thickness measurements was important to progress in thickness uniformity and control. Net CdTe material utilization of 82% was demonstrated. The ability to raise the utilization further was shown with the demonstration of inherent CdS and CdTe material utilizations of over 90%. Post-CdTe-deposition process development, which included process space exploration and problem diagnosis, was an important part of advances in efficiency and yield. As part of the efficiency-improvement task, research was done on cells and modules with reduced CdS thickness to increase photocurrent.

  4. Thin Film

    African Journals Online (AJOL)

    a

    organic substances. KEY WORDS: Photoelectrocatalysis, Titanium dioxide, Cuprous oxide, Composite thin film, Photo electrode. INTRODUCTION ... reddish p-type semiconductor with a direct band gap of 2.0-2.2 eV [18, 19]. ... Photoelectrocatalytic removal of color from water using TiO2 and TiO2/Cu2O electrodes. Bull.

  5. Production and characterization of CdTe films for CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    Pal, A.K.; Chaudhuri, S.

    1988-01-01

    Cadmium telluride is considered as one of the most promising materials in the field of semiconductor devices due to its near ideal band gap for most efficient conversion of solar energy. It can also be prepared in both n and p type forms so that solar cell with homojunction or heterojunction configurations can be obtained. Earlier CdTe was mostly used in single crystal form for device fabrication. But the devices produced were not cost effective. The obvious answer to this problem is to opt for thin film technology for preparing device grade CdTe films. The fundamental problem of producing device grade CdTe films is associated with inherent high resistivity and a low carrier life time. The authors report, in this paper, studies on the CdTe films produced by hot wall vacuum evaporation. The films were deposited onto glass, molybdenum and single crystal NaCl substrates under various experimental conditions. The optimum values of the deposition parameters were uniquely determined to obtain best quality film for the fabrication of the solar cell. The stoichiometry of the film was tested

  6. Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell and of low-cost/large-area module (Manufacture of high-reliability CdTe solar module); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    The target is a low-cost CdS/CdTe solar cell of a large area (60cm times 90cm), the establishment of mass-production technologies for the cell, and the enhancement of production efficiency. A thin film formation technology of subjecting CdS film organic metal to pyrolysis is established, which reduces photoabsorption loss in the shortwave domain of wavelength of not longer than 500nm, reduces reflection loss in the film, and improves on short-circuit current density. Improvement is also achieved on CdTe film quality and junction quality by use of a proximity sublimation method in a vacuum, when a conversion rate of 16.0% (1cm{sup 2}) is attained which is the highest in the world. Based on the results of the above-said efforts, a 3.3mm-thick glass substrate is employed for CdTe film to develop into a 30cm times 60cm-large size, with the film thereon uniformly thick over a large area thanks to a normal pressure proximity sublimation method. Studies are made toward a process nearer to the ultimate product and, using the patterning technique, a 30cm times 60cm-large CdTe solar cell is tentatively built realizing a conversion rate of 9.8%. (NEDO)

  7. thin films

    Indian Academy of Sciences (India)

    The anionic precursor was 1% H2O2 solution. Both the cationic and anionic precursors were kept at room temperature (∼300 K). One SILAR cycle consists of two steps: (i) adsorption of Sn4+ ions on the substrate surface for 20 s and (ii) reaction with H2O2 solution for 40 s to form stable SnO2:H2O thin film on the substrate.

  8. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    Directory of Open Access Journals (Sweden)

    Obi K. Echendu

    2015-05-01

    Full Text Available A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to the 8.0% efficiency of a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

  9. Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2018-03-01

    The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

  10. Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2006-07-01

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  11. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2003-10-01

    This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Si materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.

  12. Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    DEFF Research Database (Denmark)

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve

    2016-01-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax bas...

  13. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  14. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  15. Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

    Science.gov (United States)

    Munshi, Amit Harenkumar

    CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

  16. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    International Nuclear Information System (INIS)

    Yao, Huizhen; Ma, Jinwen; Mu, Yannan; Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou; Yang, Haibin

    2015-01-01

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm 2 , which is higher than that of samples prepared at other temperatures. Furthermore, CdCl 2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl 2 treatment improved to 2.97 mA/cm 2 , indicating a potential application in photovoltaic devices

  17. In-situ CdCl{sub 2}-treated CdTe film surface analysis by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Vamsi Krishna, K.; Dutta, V. [Centre for Energy Studies, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 100 016 (India)

    2004-07-01

    CdTe thin films are deposited using a spray pyrolysis technique without and with in-situ CdCl{sub 2} treatment. An X-ray photoelectron spectroscopy technique is used to study the Cd, Te, O and Cl chemical environments and the valence-band spectra of the CdTe film surface. A shift in the Fermi-level position of {proportional_to}200 meV towards the valence-band maximum is observed in the CdTe film after the in-situ CdCl{sub 2} treatment, which is attributed to the increment of the Cl concentration and the improvement in the grain growth of the CdTe film. In addition to the increment of the Cl concentration, less surface oxidation is observed compared to that for ex-situ treatment. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Excess Dark Currents and Transients in Thin-Film CdTe Solar Cells: Implications for Cell Stability and Encapsulation of Scribe Lines and Cell Ends in Modules

    Energy Technology Data Exchange (ETDEWEB)

    McMahon, T. J.; Berniard, T. J.; Albin, D. S.; Demtsu, S. H.

    2005-02-01

    We have isolated a non-linear, metastable, shunt-path failure mechanism located at the CdS/CdTe cell edge. In such cases, most performance loss, usually erratic, can be associated with the shunt path. We studied these shunt paths using dark current-transients and infrared (ir) imaging and find only one shunt path per cell and only at the cell corner wall, even in badly degraded cells. The effect on diminishing the cell's efficiency far exceeds what would be expected from the cell's linear shunt-resistance value. We propose that current transients and ir imaging be used as a ''fingerprint'' of the source and magnitude of excess currents to evaluate the contribution of scribe-line edges and cell ends in thin-film module performance and degradation due to environmental stress. Protection afforded by, or contamination due to, new or currently used encapsulants can then be evaluated.

  19. Use of photoluminescence spectroscopy to characterize the crystalline quality of CdTe films grown by a modified CSVT technique

    International Nuclear Information System (INIS)

    Mendoza-Alvarez, J.G.; Sanchez-Sinencio, F.; Zelaya, O.; Gonzalez-Hernandez, Y.J.; Cardenas, M.; Chao, S.S.

    1987-01-01

    The authors have employed photoluminescence measurements at 10-300 0 K to study the effects of deposition parameters, surface preparation and heat treatment on the properties of CdTe polycrystalline thin films. The films were grown using a modified hot wall close spaced vapor transport system. The authors found strong differences in the photoluminescence spectra of samples grown under different conditions. Heat treatments in the as-grown samples increase the average particle size and reduce the native defect density

  20. Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    F. de Moure-Flores

    2012-06-01

    Full Text Available Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.

  1. Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

    1992-09-01

    This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

  2. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)

    2007-07-15

    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  4. Polycrystalline Thin Film Photovoltaics: Research, Development, and Technologies: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H. S.; Zweibel, K.; von Roedern, B.

    2002-05-01

    II-VI binary thin-film solar cells based on cadmium telluride (CdTe) and I-III-VI ternary thin-film solar cells based on copper indium diselenide (CIS) and related materials have been the subject of intense research and development in the past few years. Substantial progress has been made thus far in the area of materials research, device fabrication, and technology development, and numerous applications based on CdTe and CIS have been deployed worldwide. World record efficiency of 16.5% has been achieved by NREL scientists for a thin-film CdTe solar cell using a modified device structure. Also, NREL scientists achieved world-record efficiency of 21.1% for a thin-film CIGS solar cell under a 14X concentration and AM1.5 global spectrum. When measured under a AM1.5 direct spectrum, the efficiency increases to 21.5%. Pathways for achieving 25% efficiency for tandem polycrystalline thin-film solar cells are elucidated. R&D issues relating to CdTe and CIS are reported in this paper, such as contact stability and accelerated life testing in CdTe, and effects of moisture ingress in thin-film CIS devices. Substantial technology development is currently under way, with various groups reporting power module efficiencies in the range of 7.0% to 12.1% and power output of 40.0 to 92.5 W. A number of lessons learned during the scale-up activities of the technology development for fabrication of thin-film power modules are discussed. The major global players actively involved in the technology development and commercialization efforts using both rigid and flexible power modules are highlighted.

  5. Thermal and structural properties of spray pyrolysed CdS thin film

    Indian Academy of Sciences (India)

    Unknown

    Thermal and structural properties of CdS thin film. 235. 235 by photoacoustic technique. Polycrystalline CdTe films having 55 µm thickness were grown onto the glass slides using the close space vapour technique. The total thick- ness of two-layer system (glass and CdSe thin film) could be changed by varying the thickness ...

  6. Health, safety and environmental issues in thin film manufacturing

    OpenAIRE

    Alsema, E.A.; Baumann, A.E.; Hill, R.; Patterson, M.H.

    1997-01-01

    An investigation is made of Health, Safety and Environmental (HSE) aspects for the manufacturing, use and decommissioning of CdTe, CIS and a-Si modules. Issues regarding energy requirements, resource availability, emissions of toxic materials, occupational health and safety and module waste treatment are reviewed. Waste streams in thin film module manufacturing are analyzed in detail and treatment methods are discussed. Finally the technological options for thin film module recycling are inve...

  7. Thin Film Processes

    CERN Document Server

    Vossen, John L.

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application

  8. Comparison of CdS films deposited by different techniques: Effects on CdTe solar cell

    International Nuclear Information System (INIS)

    Lee, Jaehyeong

    2005-01-01

    Polycrystalline cadmium sulfide (CdS) thin-films were deposited on glass substrate by chemical bath deposition (CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling

  9. Laser applications in thin-film photovoltaics

    Science.gov (United States)

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2010-08-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laser-based fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH4), silane radicals (SiH3, SiH2, SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.

  10. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  11. Optical thin film devices

    Science.gov (United States)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  12. Thin films on cantilevers

    NARCIS (Netherlands)

    Nazeer, H.

    2012-01-01

    The main goal of the work compiled in this thesis is to investigate thin films for integration in micro electromechanical systems (MEMS). The miniaturization of MEMS actuators and sensors without compromising their performance requires thin films of different active materials with specific

  13. Polycrystalline thin-film technology: Recent progress in photovoltaics

    Science.gov (United States)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe2), cadmium telluride (CdTe), and thin film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin film CuInSe2, has made some rapid advances in terms of high efficiency and long term reliability. For CuInSe2 power modules, a world record has been reported on a 0.4 sq m module with an aperture-area efficiency of 10.4 pct. and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe2 modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 sq cm. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10 pct.; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  14. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  15. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  16. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  17. Flexible polycrystalline thin-film photovoltaics for space applications

    Science.gov (United States)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1993-01-01

    Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

  18. Thin Film Photovoltaic Cells on Flexible Substrates Integrated with Energy Storage

    Science.gov (United States)

    2011-11-30

    Synthesis of CZTS thin films using TBDS as a sulfur source Thin film solar cells based on Cu(In,Ga)(S,Se)2 and CdTe have demonstrated significant...efficient ones at the laboratory level and have demonstrated efficincies in the range of-20% [3]. However, both CIGS and CdTe based thin film solar... modules . References [1] R. Liu, J. Duay, S.B. Lee, ACS Nano, 4 (2010) 4299-4307. [2] A.L.M. Reddy, M.M. Shaijumon, S.R. Gowda, P.M. Ajayan Summary

  19. Thin film hydrogen sensor

    Science.gov (United States)

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  20. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  1. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  2. MOCVD of thin film photovoltaic solar cells—Next-generation production technology?

    Science.gov (United States)

    Irvine, S. J. C.; Barrioz, V.; Lamb, D.; Jones, E. W.; Rowlands-Jones, R. L.

    2008-11-01

    This paper will review the chalcogenide thin film photovoltaic (PV) solar cells, based on cadmium telluride (CdTe) and copper indium diselenide (CIS) and discuss the potential for metalorganic chemical vapour deposition (MOCVD) to enable more advanced devices in the second generation of CdTe module production. The current generation of production methods is based on physical vapour deposition (PVD) or close-spaced sublimation (CSS). This paper concentrates on the less well-known topic of MOCVD of thin film chalcogenide cells, and in particular that of CdTe. Efficient CdTe PV solar cells (>10% AM1.5) have been demonstrated from deposition of the CdS, CdTe and CdCl 2 films in a single MOCVD chamber. The CdTe layer was doped with As and an additional high As concentration CdTe layer provides effective low resistance contacting without the need for wet etching the surface. The high level of flexibility in using MOCVD has been demonstrated where the CdS window layer has been alloyed with Zn to improve the blue response of the PV device and improve AM1.5 efficiency to 13.3%.

  3. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  4. The influence of physical and technological magnetron sputtering modes on the structure and optical properties of CdS and CdTe films

    Directory of Open Access Journals (Sweden)

    G.S. Khrypunov

    2017-07-01

    Full Text Available To create technology for preparation of CdS and CdTe thin films by direct current magnetron sputtering, the influence of physical and technological condensation modes on the crystal structure and optical properties of these films were investigated. The laboratory method of DC magnetron sputtering with preheating of the target for the mentioned films on glass substrates was developed. We obtained the CdS layers with hexagonal structure 150…200 nm thick under conditions when the plasma discharge current density was 1.1 mA/cm2 and the deposition rate – 30…40 nm/min. The bandgap in the obtained CdS films is Eg = 2.38…2.41 eV. After annealing in vacuum, the optical transparence of CdS films reaches 80…90%, which allows to use these films as a transparent window layer in solar cells based on heterojunctions of CdS/CdTe. When the plasma discharge current density is 2.2…5.4 mA/cm2 and the deposition rate is 200 nm/min, we obtained CdTe layers with hexagonal structure up to 5 µm thick. The transmittance of CdTe films with hexagonal structure in the wavelength range of the visible spectrum is up to 5%, and in the infrared spectral range is about 60%. The bandgap in the obtained CdTe layers of different thickness is 1.52…1.54 eV. After chloride treatment as a result of the phase transition wurtzite–sphalerite, the investigated CdTe films contain only the stable cubic structure and can be used as a base layer of solar cells.

  5. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  6. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  7. Epitaxial thin films

    Science.gov (United States)

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  8. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (CdS/CdTe solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (CdTe taiyo denchi module seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of CdS/CdTe solar cell modules in fiscal 1994. (1) On the fabrication technology for high-efficiency large-area solar cells, high-quality CdTe active layer was studied. S content taken in the active layer at sintering of CdTe decreased with an increase in formed CdTe, resulting in improvement of Voc of cells. (2) On the window layer with wide band gap, the solar cell superior in collection efficiency and photoelectric characteristics could be obtained using the newly developed mixed crystal film of Cd(1-x)Zn(x)S. (3) On the forming technology of large-area coating/sintering films, improvement of CdS film quality was studied by pressurized processing of printed CdS films. As a result, improvement of film density and light transmissivity was confirmed. (4) On the leveling process technology of CdTe films, smooth surface films were obtained by experiment using an equipment simultaneously exciting samples in all directions as one of uniform coating methods of films. 7 figs.

  9. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  10. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  11. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  12. Laser scribing integration of polycrystalline thin film solar cells

    Science.gov (United States)

    Sozzi, Michele; Manilia, Filomena; Antezza, Roberto; Catellani, Cristina; Candiani, Alessandro; Coscelli, Enrico; Cucinotta, Annamaria; Selleri, Stefano; Menossi, Daniele; Bosio, Alessio

    2013-03-01

    The growing demand for high productivity in the thin-film photovoltaic module industry, together with the request for more and more efficient devices, needs high-performance laser-scribing. The results of scribing tests on CdTe and CIGS solar cells samples are here presented. A comparison between the scribes obtained with ns regime fiber lasers, and a ps regime diode pumped solid state laser will be also reported.

  13. Protein thin film machines.

    Science.gov (United States)

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-12-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fueled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  14. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  15. Functional organic thin films

    OpenAIRE

    Scharnberg, Michael

    2007-01-01

    Organic thin films are used in many technological and engineering applications nowadays. They find use as coatings, sensors, detectors, as matrix materials in nanocomposites, as self-assembled monolayers for surface functionalization, as low-k dielectrics in integrated circuits and in advanced organic electronic applications like organic light emitting diodes, organic field effect transistors and organic photovoltaics (esp. organic solar cells) and many other applications. OLED displays are n...

  16. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  17. Three-dimensional defects in CdTe films obtained by pulsed laser deposition

    NARCIS (Netherlands)

    Sagan, P; Virt, IS; Zawislak, J; Rudyj, IO; Kuzma, M

    2004-01-01

    The quality of Cd chalcodenides epitaxial films can be enhanced seriously by applying a pulsed (electron beam or laser beam) method for ablation of targets. The structure of laser deposited CdTe layers was investigated by transmission high energy electron diffraction. This method is very useful for

  18. Influences of the CdS nanoparticles grown strategies on CdTe nanorods array films: A comparison between successive ionic layer absorption and reaction and chemical bath deposition

    International Nuclear Information System (INIS)

    Wang, Jun; Zhou, Xiaoming; Lv, Pin; Yang, Lihua; Ding, Dong; Niu, Jiasheng; Liu, Li; Li, Xue; Fu, Wuyou; Yang, Haibin

    2016-01-01

    The cadmium sulfide (CdS) film is deposited on the surface of cadmium telluride (CdTe) nanorods (NRs) by two different methods, successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) techniques. The influence of the deposition parameters on the properties of the films is investigated. Compared to SILAR, CBD is a simple and time saving technique, which can ensure full coverage and better growth of CdS on the surface of CdTe NRs. The photovoltaic characteristics of CdS sensitized CdTe films are also investigated. It is found that the CdTe/CBD-CdS thin film demonstrates excellent photoelectrical properties, which is ascribed to the large absorption coefficient of the material, indicating the potential applications in solar cells.

  19. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  20. X-ray photoelectron spectroscopy studies of the surface composition of highly luminescent CdTe nanoparticles in multilayer films

    International Nuclear Information System (INIS)

    Zhang Hao; Yang Bai

    2002-01-01

    3-Mercaptopropionic acid-stabilized CdTe nanoparticles were prepared and assembled layer-by-layer with poly(diallyldimethylammonium chloride) (PDAC) to form a polymer-supported ultrathin film by virtue of the Coulombic interaction between negatively charged CdTe and positively charged PDAC. The composition of the CdTe nanoparticle multilayer films was analyzed by X-ray photoelectron spectroscopy (XPS) combined with optical absorbance and luminescence measurements. It was experimentally observed that Cd-thiol complexes on the surface of the CdTe nanoparticles provide the crucial chemical passivation responsible for the high photoluminescence (PL) efficiency of the CdTe particles. The high PL efficiency and high stability of CdTe particles corresponded to the particles with the high surface coverage with Cd-thiol complexes. Moreover, XPS data indicated the surface coverage with Cd-thiol complexes could be increased around the CdTe particle by either reflux or adjusting the pH of resulted CdTe colloidal suspension, which was consistent with the results from optical absorbance and luminescence spectra. It appeared that the popular method of constructing multilayer films could be used as a tool to characterize the surface composition of nanometer-sized particles

  1. Invited Paper: CIGS-based thin film solar cells and modules: Unique material properties

    Science.gov (United States)

    Nakada, Tokio

    2012-04-01

    Although CIGS solar cells consist of a polycrystalline thin film grown on a glass substrate, more than 20% conversion efficiency has been achieved. The efficiency has reached the same level as polycrystalline silicon solar cells. This high efficiency has not yet been observed in other thin film solar cells including thin film Si and CdTe. Therefore, it is important to understand the mechanisms that allow CIGS solar cells to exhibit high conversion efficiencies. This paper discusses the origin of the high efficiency and demonstrates that it is caused by the unique material properties of CIGS films.

  2. Potential of thin-film solar cell module technology

    Science.gov (United States)

    Shimada, K.; Ferber, R. R.; Costogue, E. N.

    1985-01-01

    During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

  3. Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films: Solar cell applications

    International Nuclear Information System (INIS)

    Fang Li; Chen Jing; Xu Ling; Xu Jun; Ma Zhong-Yuan; Su Wei-Ning; Yu Yao

    2013-01-01

    Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42–2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300°C show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained. (interdisciplinary physics and related areas of science and technology)

  4. Advances in polycrystalline thin-film photovoltaics for space applications

    Science.gov (United States)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  5. Advances in polycrystalline thin-film photovoltaics for space applications

    Science.gov (United States)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-01-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  6. Single-phase cadmium telluride thin films deposited by electroless electrodeposition

    International Nuclear Information System (INIS)

    Khrypunov, G.; Klochko, N.; Lyubov, V.; Li, T.; Volkova, N.

    2010-01-01

    Full text : Today cadmium telluride (CdTe) is a leading base material for the fabrication of thin film solar cells. Equally with the creation of traditional thin film photovoltaic devices on the base of CdTe in recent years several approaches have been investigated to develop solar cells with extremely thin (80-500 nm) CdTe absorber (so-called ηE(eta)-solar cells) that offer the potential to reduce recombination losses in the base layers and thus use low cost materials. Until today the CdTe depositions for the η-solar cells manufacture were performed by vapour phase epitaxy under dynamical vacuum at working temperature 750 degrees Celsium or by electrodeposition in the special electrochemical cell equipped with the potentiostat. Development research of simple and inexpensive method for obtaining of the single-phase stoichiometric cadmium telluride films has required an improvement of the electroless electrodeposition technique, which theretofore was characterized by some disadvantages, namely, the CdTe films were polluted by free tellurium additions and the composition of the films was Cd:Te=55:45. So, for the showing up the synthesis of doped or stoichiometric cadmium telluride films conditions and in order to decide the problem of the deposition of single-phase CdTe layers it was researched the electrochemical processes going during electroless electrolysis in sulfate solutions with different acidities and CdSO 4 concentrations. Some film samples during deposition were illuminated by 500 W halogen lamp. Deposition time was 10-15 min. The phase composition and structure of the deposited films were determined by XRD-method, the average sizes of the crystalline grains in the films were estimated using Debye-Scherer formula. The transmittance spectra of the samples were measured by double beam spectrophotometer in the spectral range of 0.6-1.1 μm. Surface morphology of the films was researched by scanning electron microscopy. By means of analysis of the

  7. Thin Film CdZnTe Detector Arrays for Digital Mammography

    National Research Council Canada - National Science Library

    Sudharsanan, Rengarajan

    1999-01-01

    ...) directly on thin-film transistor (TFT) active matrix arrays for image readout. CdTe and CdZnTe have the potential to meet the requirements for digital mammography due to their high x-ray absorption, large band gap and good carrier transport...

  8. Thin Film CdZnTe Detector Arrays for Digital Mammography

    National Research Council Canada - National Science Library

    Kalkhoran, Nader

    2001-01-01

    ...) directly on thin-film transistor (TFT) active matrix arrays for image readout. CdTe and CdZnTe have the potential to meet the requirements for digital mammography due to their high x-ray absorption, large bandgap and good carrier transport...

  9. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  10. Electrochemical preparation of CdTe semiconductor films from ammoniac-chloride solutions containing 2,2'-dipyridyl

    International Nuclear Information System (INIS)

    Dergacheva, M.B.; Statsyuk, V.N.; Fogel', L.A.

    2007-01-01

    Electrodeposition of CdTe films from ammoniac-chloride buffer electrolytes with 2,2'-dipyridyl additions is studied. Effect of film grains size on light volt-ampere characteristics of CdTe semiconductor compound is studied. Samples prepared from ammoniac-chloride buffer electrolytes with pH 9.2 in the presence of 1· -3 m. 2,2'-dipyridyl demonstrates the best characteristic [ru

  11. Process Development for High Voc CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  12. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  13. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  14. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  15. Laser scribing of polycrystalline thin films

    Science.gov (United States)

    Compaan, A. D.; Matulionis, I.; Nakade, S.

    2000-07-01

    We have investigated the use of several different types of lasers for scribing of the polycrystalline materials used for thin-film solar cells: CdTe, CuInGaSe 2 (CIGS), ZnO, SnO 2, Mo, Al, and Au. The lasers included four different neodymium-yttrium-aluminum garnet (Nd:YAG) (both 1064 and 532 nm wavelengths), a Cu vapor (511/578 nm), an XeCl excimer (308 nm), and a KrF excimer (248 nm). Pulse durations ranged from ˜0.1 to ˜250 ns. We found that the fundamental and frequency-doubled wavelengths of the Nd:YAG systems work well for almost all of the above materials except for the transparent conductor ZnO. The diode-laser-pumped Nd:YAG was particularly convenient to use. For ZnO the uv wavelengths of the two excimer lasers produced good results. Pulse duration was found generally not to be critical except for the case of CIGS on Mo where longer pulse durations (≥250 ns) are advantageous. The frequently observed problem of ridge formation along the edges of scribe lines in the semiconductor films can be eliminated by control of intensity gradients at the film through adjustment of the focus conditions.

  16. Ferromagnetic thin films

    Science.gov (United States)

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  17. Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, O., E-mail: oscar@fmc.uva.es [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Hortelano, V.; Jimenez, J. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Plaza, J.L.; Dios, S. de; Olvera, J.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Fath, R.; Lozano, J.G.; Ben, T.; Gonzalez, D. [Dpto. Ciencia de los Materiales e Ingenieria Metalurgica y Q.I., Facultad de Ciencias, Apdo. 40, 11510 Puerto Real, Cadiz (Spain); Mass, J. [Dpto. de Fisica, Universidad del Norte, Km.5 Via Puerto Colombia, Barranquilla (Colombia)

    2011-04-28

    Research highlights: > ZnO nanowires grown from thermal Zn oxidation. > TEM reveals high quality thin nanowires several microns long. > New phase formation at long oxidation time. > Good spectroscopic properties measured by Raman, Photo and Cathodoluminsecence spectroscopies. - Abstract: <112-bar 0> wurtzite ZnO nanowires (NWs) have been obtained by oxidizing in air at 500 deg. C thermally evaporated Zn metal films deposited onto CdTe substrates. The presence of Cd atoms from the substrate on the ZnO seeding layer and NWs seems to affect the growth of the NWs. The effects of the oxidation time on the structural and optical properties of the NWs are described in detail. It is shown that the NWs density decreases and their length increases when increasing the oxidation time. Thicker Zn layers result in thinner and longer ZnO NWs. Very long oxidation times also lead to the formation of a new CdO phase which is related to the partial destruction and quality reduction of the NWs. The possible process for ZnO NW formation on CdTe substrates is discussed.

  18. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B., E-mail: gnade@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Kunnen, G. R.; Allee, D. R. [Flexible Display Center, Arizona State University, Phoenix, Arizona 85284 (United States); Sastré-Hernández, J.; Contreras-Puente, G. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Mexico City 07738 (Mexico); Mendoza-Pérez, R. [Universidad Autónoma de la Ciudad de México, Mexico City 09790 (Mexico)

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  19. Characterization of organic thin films

    CERN Document Server

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  20. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  1. Technology support for initiation of high-throughput processing of thin-film CdTe PV modules. Phase 3 final technical report, 14 March 1997--1 April 1998

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R.C.; Dorer, G.L.; Jayamaha, U.; Hanak, J.J. [Solar Cells, Inc., Toledo, OH (United States)

    1998-09-01

    Thin-film PV devices based on cadmium telluride have been identified as one of the candidates for high-performance, low-cost source of renewable electrical energy. Roadblocks to their becoming a part of the booming PV market growth have been a low rate of production and high manufacturing cost caused by several rate-limiting process steps. Solar Cells Inc. has focused on the development of manufacturing processes that will lead to high volume and low-cost manufacturing of solar cells and on increasing the performance of the present product. The process research in Phase 3 was concentrated on further refinement of a newly developed vapor transport deposition (VTD) process and its implementation into the manufacturing line. This development included subsystems for glass substrate transport, continuous feed of source materials, generation of source vapors, and uniform deposition of the semiconductor layers. As a result of this R and D effort, the VTD process has now achieved a status in which linear coating speeds in excess of 8 ft/min have been achieved for the semiconductor, equal to about two modules per minute, or 144 kW per 24 hour day. The process has been implemented in a production line, which is capable of round-the-clock continuous production of coated substrates 120 cm x 60 cm in size at a rate of 1 module every four minutes, equal to 18 kW/day. Currently the system cycle time is limited by the rate of glass introduction into the system and glass heating, but not by the rate of the semiconductor deposition. A new SCI record efficiency of 14.1% has been achieved for the cells.

  2. Deposition of CdTe films under microgravity: Foton M3 mission

    Energy Technology Data Exchange (ETDEWEB)

    Benz, K.W.; Croell, A. [Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet Freiburg (Germany); Zappettini, A.; Calestani, D. [CNR Parma, Instituto Materiali Speciali per Elettronica e Magnetismo IMEM, Fontani Parma (Italy); Dieguez, E. [Universidad Autonoma de Madrid (Spain). Departamento de Fisica de Materiales; Carotenuto, L.; Bassano, E. [Telespazio Napoli, Via Gianturco 31, 80146 Napoli (Italy); Fiederle, M.

    2009-10-15

    Experiments of deposition of CdTe films have been carried out under microgravity in the Russian Foton M3 mission. The influence of gravity has been studied with these experiments and compared to the results of simulations. The measured deposition rate could be confirmed by the theoretical results for lower temperatures. For higher temperatures the measured thickness of the deposited films was larger compared to the theoretical data. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Pulse electron beam-induced synthesis of CdTe printed films

    International Nuclear Information System (INIS)

    Houng, M.P.; Fu, S.L.; Wu, T.S.; Leu, J.T.; Cheng, K.Y.

    1987-01-01

    In an attempt to produce a high quality single crystal CdTe film with enhanced electrical properties, screen printed Cd + Te films were prepared on an aluminium oxide substrate and then irradiated with a pulsed electron beam over the energy range 12-15 KeV. Some samples were also vacuum annealed from 410-620 0 C after irradiation. The films were characterized by x-ray diffraction, scanning electron microscopy and photoluminescence. This showed that film quality and uniformity were limited by electron beam heating, although improvements can be made by vacuum annealing. Furthermore, only polycrystalline films were produced, possibly due to a too short pulse duration and the use of a polycrystalline substrate. (U.K.)

  4. Development of procedures for performance measurements and lifetime testing of thin film photovoltaic devices

    OpenAIRE

    Roschier, Solveig

    2002-01-01

    In this work single junction a-Si, CdTe and CIGS modules and prototype modules and mini-modules were investigated to reliably be able to characterize these technologies for electrical performance and to find out potential failure mechanisms in accelerated lifetime testing. Thin film modules may increase their share of the market in the future. A-Si modules have been manufactured already for several years and CdTe and CIGS modules are shortly entering the market. However, there is a lack of ch...

  5. Modeling and Design of a Thin-Film CdTe/Ge Tandem Solar Cell

    Science.gov (United States)

    Sharp, James; Pulfrey, David; Umana-Membreno, Gilberto A.; Faraone, Lorenzo; Dell, John M.

    2012-10-01

    Thin-film cadmium telluride (CdTe) solar cells have found widespread application, with current commercially available module efficiencies reaching 14.4% and production costs falling as low as US 0.75/W_p. Despite the proliferation of this technology, there have been comparatively few developments in research circles in recent years. Rather than attempt to further advance the materials science of CdTe solar cells, it is proposed to realize an efficiency improvement over conventional cells by means of a novel tandem structure. Three such structures are examined herein, and results of simulation using Synopsys Sentaurus TCAD are presented.

  6. Thin-Film Power Transformers

    Science.gov (United States)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  7. Carrier Transport, Recombination, and the Effects of Grain Boundaries in Polycrystalline Cadmium Telluride Thin Films for Photovoltaics

    Science.gov (United States)

    Tuteja, Mohit

    Cadmium Telluride (CdTe), a chalcogenide semiconductor, is currently used as the absorber layer in one of the highest efficiency thin film solar cell technologies. Current efficiency records are over 22%. In 2011, CdTe solar cells accounted for 8% of all solar cells installed. This is because, in part, CdTe has a low degradation rate, high optical absorption coefficient, and high tolerance to intrinsic defects. Solar cells based on polycrystalline CdTe exhibit a higher short-circuit current, fill factor, and power conversion efficiency than their single crystal counterparts. This is despite the fact that polycrystalline CdTe devices exhibit lower open-circuit voltages. This is contrary to the observation for silicon and III-V semiconductors, where material defects cause a dramatic drop in device performance. For example, grain boundaries in covalently-bonded semiconductors (a) act as carrier recombination centers, and (b) lead to localized energy states, causing carrier trapping. Despite significant research to date, the mechanism responsible for the superior current collection properties of polycrystalline CdTe solar cells has not been conclusively answered. This dissertation focuses on the macro-scale electronic band structure, and micro scale electronic properties of grains and grain boundaries in device-grade CdTe thin films to answer this open question. My research utilized a variety of experimental techniques. Samples were obtained from leading groups fabricating the material and devices. A CdCl 2 anneal is commonly performed as part of this fabrication and its effects were also investigated. Photoluminescence (PL) spectroscopy was employed to study the band structure and defect states in CdTe polycrystals. Cadmium vacancy- and chlorine-related states lead to carrier recombination, as in CdTe films grown by other methods. Comparing polycrystalline and single crystal CdTe, showed that the key to explaining the improved performance of polycrystalline CdTe does

  8. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  9. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  10. Investigation of MBE grown polycrystalline CdTe films on the Medipix readout chip

    Science.gov (United States)

    Schütt, S.; Vogt, A.; Frei, K.; Fischer, F.; Fiederle, M.

    2017-06-01

    Cadmium Telluride (CdTe) films are directly deposited on a CMOS (complementary metal-oxide-semiconductor) based readout chip as sensor layer for X-ray detection. This is performed by using a modified Molecular Beam Epitaxy (MBE) setup with a carbon collimator enabling growth rates up to 10 μm/h. To obtain a good contacting behaviour of the 25-50 μm thick CdTe films, Te and Sb2Te3 are additionally evaporated during the process. The investigation of polycrystalline sensor layers deposited at 400 °C with SEM (scanning electron microscopy) and XRD (X-ray diffraction) reveals a columnar growth of the individual grains oriented predominantly in (111). By PES (photoelectron spectroscopy) measurements the chemical composition of the different layers is identified in a depth profile and changes in work function along the contact structure are observed. Detector properties reveal a linear behaviour of the count rate with increasing radiation intensity as well as sensibility to holes and electrons. Spatial resolution measurements result in a resolution of 5 lp/mm, which is a mandatory requirement for medical applications.

  11. Mercury cadmium telluride (HgCdTe) thin films fabricated by close spaced sublimation technique

    International Nuclear Information System (INIS)

    Hannan, M.A.; Basharat, M.; Ali, A.; Shah, N.A.; Maqsood, A.

    2007-01-01

    Thin films of HgCdTe were fabricated by deposition of HgTe on the CdTe thin film substrates. Both depositions were carried out through close spaced sublimation (CSS) technique. The structural investigation performed by means of X-ray diffraction (XRD) technique and energy dispersive X-ray spectroscopy (EDS) showed that the deposited films exhibit a polycrystalline structure with large number of sharp grain boundaries. The samples were then characterized optically to determine the refractive index. Absorption coefficient and the optical band gaps. The estimated band gap decreased, typically from 1.46 to 1.43 Ev as Hg content in the films increased from 1.41 to 3.29-wt. the deposited films showed high value of resistivity. Which decreased with increasing temperature showing the semiconducting behavior of the films. The prepared films gave response to infrared radiation. (author)

  12. Preparation of thin vyns films

    International Nuclear Information System (INIS)

    Blanc, R.; Chedin, P.; Gizon, A.

    1965-01-01

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm 2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation [fr

  13. Optimizing diode thickness for thin-film solid state thermal neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, John W.; Mejia, Israel; Quevedo-Lopez, Manuel A.; Gnade, Bruce [Department of Materials and Science, University of Texas at Dallas, Richardson, Texas 75080 (United States); Kunnen, George R.; Allee, David [Flexible Display Center at Arizona State University, Tempe, Arizona 85284 (United States)

    2012-10-01

    In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, {sup 10}B and {sup 6}LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

  14. Nanocrystal thin film fabrication methods and apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  15. study in polymer thin films

    Indian Academy of Sciences (India)

    TECS

    carry out a careful study of steady state conduction of poly- styrene (PS) thin film thermo-electrets sandwiched be- tween metal electrodes both in doped and undoped forms. 2. Experimental. 2.1 Sample preparation. Polystyrene supplied by Polymer Chemical Industry,. Mumbai and naphthalene by S.G. Sisco Pvt Ltd., New ...

  16. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    1VES College of Arts, Science and Commerce, Sindhi Society, Chembur, Mumbai 400 071,. India. 2UGC-DAE Consortium for Scientific Research, R5 Shed, ... gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity. Keywords. Permalloy; NiFe thin films; NiFe ...

  17. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. [University of South Florida, Tampa, FL (United States)

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  18. Microstructure of Thin Films

    Science.gov (United States)

    1990-02-07

    resultant film could be varied right up to virtually pure aluminum oxide simply by varying the background oxygen pressure. More recently we have been...aT , m..a, lot,, o ,,f,02,d I4 k -1-1..... autocovariance lengths, less than 0.5 um, indicate that , 514n, ob0 o p’,Ofclllc....,,o,,oy0,1- agua sblrt

  19. Cubic erbium trihydride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Adams, D.P., E-mail: dpadams@sandia.gov; Rodriguez, M.A.; Romero, J.A.; Kotula, P.G.; Banks, J.

    2012-07-31

    High-purity, erbium hydride thin films have been deposited onto {alpha}-Al{sub 2}O{sub 3} and oxidized Si by reactive sputtering methods. Rutherford backscattering spectrometry and elastic recoil detection show that films deposited at temperatures of 35, 150 and 275 Degree-Sign C have a composition of 3H:1Er. Erbium trihydride films consist of a face-centered cubic erbium sub-lattice with a lattice parameter in the range of 5.11-5.20 A. The formation of cubic ErH{sub 3} is intriguing, because previous studies demonstrate a single trihydride phase with a hexagonal metal sub-lattice. The formation of a stable, cubic trihydride phase is attributed to a large, in-plane stress resulting from ion beam sputter deposition. - Highlights: Black-Right-Pointing-Pointer Cubic erbium trihydride thin films produced by ion beam sputter deposition. Black-Right-Pointing-Pointer Face-centered cubic metal sub-lattice verified by X-ray and electron diffraction. Black-Right-Pointing-Pointer Composition evaluated using four different techniques. Black-Right-Pointing-Pointer Film stress monitored during deposition. Black-Right-Pointing-Pointer Formation of cubic erbium trihydride attributed to a large, in-plane film stress.

  20. Approaches to improve the Voc of CDTE devices: Device modeling and thinner devices, alternative back contacts

    Science.gov (United States)

    Walkons, Curtis J.

    An existing commercial process to develop thin film CdTe superstrate cells with a lifetime tau=1-3 ns results in Voc= 810-850 mV which is 350 mV lower than expected for CdTe with a bandgap EG = 1.5 eV. Voc is limited by 1.) SRH recombination in the space charge region; and 2.) the Cu2Te back contact to CdTe, which, assuming a 0.3 eV CdTe/Cu2Te barrier, exhibits a work function of phi Cu2Te= 5.5 eV compared to the CdTe valence band of Ev,CdTe=5.8 eV. Proposed solutions to develop CdTe devices with increased Voc are: 1.) reduce SRH recombination by thinning the CdTe layer to ≤ 1 mum; and 2.) develop an ohmic contact back contact using a material with phi BC≥5.8 eV. This is consistent with simulations using 1DSCAPS modeling of CdTe/CdS superstrate cells under AM 1.5 conditions. Two types of CdTe devices are presented. The first type of CdTe device utilizes a window/CdTe stack device with an initial 3-9 mum CdTe layer which is then chemically thinned resulting in regions of the CdTe film with thickness less than 1 mum. The CdTe surface was contacted with a liquid junction quinhydrone-Pt (QH-Pt) probe which enables rapid repeatable Voc measurements on CdTe before and after thinning. In four separate experiments, the window/CdTe stack devices with thinned CdTe exhibited a Voc increase of 30-170 mV, which if implemented using a solid state contact could cut the Voc deficit in half. The second type of CdTe device utilizes C61 PCBM as a back contact to the CdTe, selected since PCBM has a valence band maximum energy (VBM) of 5.8 eV. The PCBM films were grown by two different chemistries and the characterization of the film properties and device results are discussed. The device results show that PCBM exhibits a blocking contact with a 0.6 eV Schottky barrier and possible work function of phiPCBM = 5.2 eV.

  1. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  2. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  3. Photostable epoxy polymerized carbon quantum dots luminescent thin films and the performance study

    Directory of Open Access Journals (Sweden)

    Chang Zhang

    Full Text Available High photostable epoxy polymerized carbon quantum dots (C-dots luminescent thin films were prepared and their performances were compared with the CdTe quantum dots (QDs. First, water soluble C-dots (λem = 543.60 nm were synthesized. Poly (ethylene glycol diglycidyl ether (PEG and diaminooctane were used as the polymer matrix to make the epoxy resin films. FT-IR spectra showed that there were vibration at 3448 cm−1 and 1644 cm−1 which contributed to -OH and -NH respectively. SEM observations showed that the polymerizations of the films were uniform and there were no structure defects. Mechanical tests showed the tensile modulus of C-dots composite films were 4.6, 4.9, 6.4 and 7.8 MPa respectively with corresponding 0%, 1%, 2% and 5% mass fraction of C-dots, while the tensile modulus of CdTe QDs films were 4.6 MPa under the same mass fraction of CdTe QDs. Compared with semiconductor QDs, the decay of quantum yield were 5% and 10% for the C-dots and CdTe QDs, respectively. The pictures in the continuous irradiation of 48 h showed that the C-dots film was more photostable. This study provides much helpful and profound towards the fluorescent enhancement films in the field of flexible displays. Keywords: Carbon-dots, Waterborne epoxy resin, Luminescent materials, Quantum dots displays

  4. Degradation analysis of thin film photovoltaic modules under outdoor long term exposure in Spanish continental climate conditions.

    OpenAIRE

    Silvestre Bergés, Santiago; Kichou, Sofiane; Guglielminotti, Letizia; Nofuentes Garrido, Gustavo; Alonso Abella, Miquel

    2016-01-01

    The present study analyses the degradation of thin film photovoltaic modules corresponding to four technologies: a-Si:H, a-Si:H/µc-Si:H, CIS and CdTe, under 5 years of outdoor long term exposure in Leganés, Spain. The period of outdoor exposure ranges from January 2011 to December 2015. The degradation rate and the stabilization period are analysed by using two different techniques. Moreover, the evolution of the fill factor and performance ratio is assessed. The CdTe module was found to hav...

  5. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  6. Flexible thin film magnetoimpedance sensors

    International Nuclear Information System (INIS)

    Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-01-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  7. Thin-film CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    Tyan, Y.S.; Perez-Albuerne, E.A.

    1985-01-01

    A thin-film solar cell with the configuration soda-lime glass ITO/CdS/CdTe/Au was reported earlier to have more than 10% conversion efficiency. To further improve the low-cost potential of the device, an SnO/sub 2/ layer was developed to replace ITO, and a new contact to CdTe using Ni or stainless steel to replace Au. The contact also improves the stability of the device. A low-cost method for monolithic integration of these cells to make a module is discussed. By this method, a module of 32 cm/sup 2/ area and 8.5% efficiency was fabricated. A simple and effective ''cross-cut'' method for minimizing the effects of shorting defects is also described

  8. Optical Characterization of Different Thin Film Module Technologies

    Directory of Open Access Journals (Sweden)

    R. Ebner

    2015-01-01

    Full Text Available For a complete quality control of different thin film module technologies (a-Si, CdTe, and CIS a combination of fast and nondestructive methods was investigated. Camera-based measurements, such as electroluminescence (EL, photoluminescence (PL, and infrared (IR technologies, offer excellent possibilities for determining production failures or defects in solar modules which cannot be detected by means of standard power measurements. These types of optical measurement provide high resolution images with a two-dimensional distribution of the characteristic features of PV modules. This paper focuses on quality control and characterization using EL, PL, and IR imaging with conventional cameras and an alternative excitation source for the PL-setup.

  9. A new method for preparation of (Cd,Hg)Te thin films

    International Nuclear Information System (INIS)

    Nguyen Van Khai; Ho Thi Phuong; Ta Hong Ngat; Nguyen Van Sung.

    1987-11-01

    A new method for the preparation of (Cd,Hg)Te thin films has been described. This method is based on deposition of polycrystal Cd z Hg 1-z Te on a single crystal CdTe slice. The growth process is carried out in a strong temperature gradient of (50-100)K/cm during a period of (1-24) hours. The optical parameters of the grown films have been measured at the room temperature while the electrical parameters at liquid nitrogen temperature. (author). 14 refs, 4 figs

  10. Organic Thin Films for Photonics Applications

    National Research Council Canada - National Science Library

    Thorner, John

    1999-01-01

    The Organic Thin Films for Photonics Applications Topical Meeting provided an interdisciplinary forum for the presentation and discussion of new and previously unpublished results on advanced organic...

  11. Analysis of Hard Thin Film Coating

    Science.gov (United States)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  12. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  13. Progress in thin film techniques

    International Nuclear Information System (INIS)

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  14. Thin film solar energy collector

    Science.gov (United States)

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  15. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  16. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alaa Ayad Al-mebir

    2016-01-01

    Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

  17. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  18. Pulse electrodeposition of Prussian Blue thin films

    International Nuclear Information System (INIS)

    Najafisayar, P.; Bahrololoom, M.E.

    2013-01-01

    The effects of pulse electrodeposition parameters like peak current density and frequency on the electrochemical properties of Prussian Blue thin films were investigated. Electrochemical Impedance Spectroscopy, Cyclic Voltammetry and Chronoamperometry tests were carried out on Prussian Blue thin films which were pulse electrodeposited on Indium Tin Oxide coated glass substrates. The results showed that increase in the peak current densities and using higher pulsating frequencies during electrodeposition decreases the charge transfer resistance of the thin films while the diffusion coefficient of electroactive species in the films is increased as a consequence of using the same pulsating parameters. In addition, pulse electrodeposition technique does not alter deposition mechanism and morphology of the Prussian Blue thin films. - Highlights: • Prussian Blue thin films were pulse electrodeposited onto the ITO coated glass. • Pulse current condition affected thin films' electrochemical properties. • High pulsating current and frequency lower thin films' charge transfer resistance. • High pulsating current and frequency increase diffusion coefficient in thin films

  19. CuIn1-xGaxSe2 Thin Film Solar Cells: Final Subcontract Report, 5 January 1998 -- 31 October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N. G.

    2002-01-01

    This report describes the development of CIGS2 thin-film solar cells on glass and stainless-steel foil substrates; fabrication of a large-area, dual-chamber magnetron-sputtering unit; Round Robin AES and SIMS analysis; and current-voltage characteristics of CdTe modules and analysis of CdTe module samples. More detailed results on CIGS2 cells and the large-area, dual-chamber magnetron-sputtering unit were presented at the MRS Conference, the European PV Conference, and NCPV Program Review Meeting and are included in Appendices I, II, and III. The results of Round Robin AES and SIMS analysis were submitted to the National CIGS Team Meeting. The current-voltage characteristics of CdTe modules and results of analyses of CdTe module samples were submitted separately to NREL and First Solar.

  20. Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

    Science.gov (United States)

    Ojo, A. A.; Dharmadasa, I. M.

    2017-08-01

    Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

  1. Advances in CdTe R&D at NREL

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Zhou, J.; Keane, J. C.; Dhere, R. G.; Albin, D. S.; Gessert, T. A.; DeHart, C.; Duda, A.; Ward, J. J.; Yan, Y.; Teeter, G.; Levi, D. H.; Asher, S.; Perkins, C.; Moutinho, H. R.; To, B.

    2005-11-01

    This paper summarizes the following R&D accomplishments at National Renewable Energy Laboratory (NREL): (1) Developed several novel materials and world-record high-efficiency CdTe solar cell, (2) Developed "one heat-up step" manufacturing processes, and (3) Demonstrated 13.9% transparent CdTe cell and 15.3% CdTe/CIS polycrystalline tandem solar cell. Cadmium telluride has been well recognized as a promising photovoltaic material for thin-film solar cells because of its near-optimum bandgap of ~1.5 eV and its high absorption coefficient. Impressive results have been achieved in the past few years for polycrystalline CdTe thin-film solar cells at NREL. In this paper, we summarize some recent R&D activities at NREL.

  2. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  3. Permalloy Thin-film Magnetic Sensors

    NARCIS (Netherlands)

    Groenland, J.P.J.; Eijkel, C.J.M.; Fluitman, J.H.J.; de Ridder, R.M.

    1992-01-01

    An introduction to the theory of the anisotropic magnetoresistance effect in ferromagnetic thin films is given, ending in a treatment of the minimalization of the free energy which is the result of the intrinsic and extrinsic anisotropies of the thin-film structure. The anisotropic magnetoresistance

  4. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  5. Micromechanics of substrate-supported thin films

    Science.gov (United States)

    He, Wei; Han, Meidong; Wang, Shibin; Li, Lin-An; Xue, Xiuli

    2017-09-01

    The mechanical properties of metallic thin films deposited on a substrate play a crucial role in the performance of micro/nano-electromechanical systems (MEMS/NEMS) and flexible electronics. This article reviews ongoing study on the mechanics of substrate-supported thin films, with emphasis on the experimental characterization techniques, such as the rule of mixture and X-ray tensile testing. In particular, the determination of interfacial adhesion energy, film deformation, elastic properties and Bauschinger effect are discussed.

  6. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  7. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  8. Thin-film cadmium telluride photovoltaics: ES and H issues, solutions, and perspectives

    International Nuclear Information System (INIS)

    Zweibel, K.; Moskowitz, P.; Fthenakis, V.

    1998-02-01

    Photovoltaics (PV) is a growing business worldwide, with new technologies evolving towards potentially large-volume production. PV use produces no emissions, thus offsetting many potential environmental problems. However, the new PV technologies also bring unfamiliar environment, safety, and health (ES and H) challenges that require innovative solutions. This is a summary of the issues, solutions, and perspectives associated with the use of cadmium in one of the new and important PV technologies: thin-film, cadmium telluride (CdTe) PV, which is being developed and commercialized by several companies including Solar Cells Inc. (Toledo, Ohio), BP Solar (Fairfield, California), and Matsushita (Japan). The principal ES and H issue for thin-film cadmium telluride PV is the potential introduction of cadmium--a toxic heavy metal--into the air or water. The amount of cadmium in thin-film PV, however, is quite small--one nickel cadmium flashlight battery has about as much cadmium (7 g) as a square meter of PV module using current technology--and a typical cordless power tool will have 5--10 batteries. CdTe modules are also very well sealed, limiting the chance of release. Nonetheless, minimizing the amount of cadmium in cadmium telluride modules and preventing the introduction of that cadmium into the environment is a top priority for National Renewable Energy Laboratory researchers and cadmium telluride PV manufacturers

  9. Method of producing thin cellulose nitrate film

    International Nuclear Information System (INIS)

    Lupica, S.B.

    1975-01-01

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent

  10. Processing and modeling issues for thin-film solar cell devices. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; Phillips, J.E. [Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

    1997-11-01

    During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

  11. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    Directory of Open Access Journals (Sweden)

    I. M. Dharmadasa

    2014-06-01

    Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

  12. Optical constant of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

    2017-01-01

    The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability of the dev......The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... predicts optical losses based on structure of the gold films....

  13. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  14. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c...... or less; and e. repeating steps b. and c. a total of N times, such that N repeating pairs of layers (A/B) are built up, wherein N is 1 or more. The invention also provides a thin film multi-layered heterostructure as such, and the combination of a thin film multi-layered heterostructure and a substrate...

  15. Macro stress mapping on thin film buckling

    International Nuclear Information System (INIS)

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-01-01

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling

  16. Study of zinc oxide thin film characteristics

    OpenAIRE

    Johari Shazlina; Muhammad Nazalea Yazmin; Zakaria Mohd Rosydi

    2017-01-01

    This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influe...

  17. Design Strategies for High-Efficiency CdTe Solar Cells

    Science.gov (United States)

    Song, Tao

    With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness concentration. (Abstract shortened by ProQuest.).

  18. Development of Combinatorial Pulsed Laser Deposition for Expedited Device Optimization in CdTe/CdS Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Ali Kadhim

    2016-01-01

    Full Text Available A combinatorial pulsed laser deposition system was developed by integrating a computer controlled scanning sample stage in order to rapidly screen processing conditions relevant to CdTe/CdS thin-film solar cells. Using this system, the thickness of the CdTe absorber layer is varied across a single sample from 1.5 μm to 0.75 μm. The effects of thickness on CdTe grain morphology, crystal orientation, and cell efficiency were investigated with respect to different postprocessing conditions. It is shown that the thinner CdTe layer of 0.75 μm obtained the best power conversion efficiency up to 5.3%. The results of this work shows the importance that CdTe grain size/morphology relative to CdTe thickness has on device performance and quantitatively exhibits what those values should be to obtain efficient thin-film CdTe/CdS solar cells fabricated with pulsed laser deposition. Further development of this combinatorial approach could enable high-throughput exploration and optimization of CdTe/CdS solar cells.

  19. Practical issues for testing thin film PV modules at standard test conditions.

    OpenAIRE

    Marín González, Omar; Raga Arroyo, Manuela Pilar; Alonso Garcia, M. Carmen; Muñoz-García, Miguel Angel

    2013-01-01

    Thin film photovoltaic (TF) modules have gained importance in the photovoltaic (PV) market. New PV plants increasingly use TF technologies. In order to have a reliable sample of a PV module population, a huge number of modules must be measured. There is a big variety of materials used in TF technology. Some of these modules are made of amorphous or microcrystalline silicon. Other are made of CIS or CdTe. Not all these materials respond the same under standard test conditions (STC) of power...

  20. Robust measurement of thin-film photovoltaic modules exhibiting light-induced transients

    Science.gov (United States)

    Deceglie, Michael G.; Silverman, Timothy J.; Marion, Bill; Kurtz, Sarah R.

    2015-09-01

    Light-induced changes to the current-voltage characteristic of thin-film photovoltaic modules (i.e. light-soaking effects) frustrate the repeatable measurement of their operating power. We describe best practices for mitigating, or stabilizing, light-soaking effects for both CdTe and CIGS modules to enable robust, repeatable, and relevant power measurements. We motivate the practices by detailing how modules react to changes in different stabilization methods. We also describe and demonstrate a method for validating alternative stabilization procedures, such as those relying on forward bias in the dark. Reliable measurements of module power are critical for qualification testing, reliability testing, and power rating.

  1. Robust Measurement of Thin-Film Photovoltaic Modules Exhibiting Light-Induced Transients: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Deceglie, Michael, G.; Silverman, Timothy J.; Marion, Bill; Kurtz, Sarah R.

    2015-09-09

    Light-induced changes to the current-voltage characteristic of thin-film photovoltaic modules (i.e. light-soaking effects) frustrate the repeatable measurement of their operating power. We describe best practices for mitigating, or stabilizing, light-soaking effects for both CdTe and CIGS modules to enable robust, repeatable, and relevant power measurements. We motivate the practices by detailing how modules react to changes in different stabilization methods. We also describe and demonstrate a method for validating alternative stabilization procedures, such as those relying on forward bias in the dark. Reliable measurements of module power are critical for qualification testing, reliability testing, and power rating.

  2. The influence of series resistance on the I-V characteristics of CdTe ...

    African Journals Online (AJOL)

    The influence of series resistance (Rs) on the current (I) – voltage(V) characteristics of evaporated cadmium telluride(CdTe) thin films has been investigated. CdTe films of thickness 1000Å were deposited by thermal evaporation in a vacuum of about 10-5torr. For the I – V measurements, the two point probe configuration ...

  3. High density nonmagnetic cobalt in thin films

    OpenAIRE

    Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Dev, B. N.

    2017-01-01

    Recently high density (HD) nonmagnetic (NM) cobalt has been discovered in a cobalt thin film, grown on Si(111). This cobalt film had a natural cobalt oxide at the top. The oxide layer forms when the film is taken out of the electron-beam deposition chamber and exposed to air. Thin HD NM cobalt layers were found near the cobalt/silicon and the cobalt-oxide/cobalt interfaces, while the thicker mid-depth region of the film was hcp cobalt with normal density and normal magnetic moment. If an ultr...

  4. Performance Characterization of Monolithic Thin Film Resistors

    Science.gov (United States)

    Yin, Rong

    Thin film resistors have a large resistance range and stable performance under high temperature operating condition. Thin film resistors trimmed by laser beam are able to achieve very high precision on resistance value. As a result, thin film resistors have been widely used to improve the performance of integrated circuits such as operational amplifier, analog-to-digital (A/D) and digital -to-analog (D/A) converters, etc. In this dissertation, a new class of thin film resistors, silicon chrome (SiCr) thin film resistors, has been investigated at length. From thin film characterization to aging behavior modelling, we have carried out a series of engineering activities. The characteristics of the SiCr thin film incorporated into three bipolar processes were first determined. After laser trimming, we have measured a couple of physical parameters of the SiCr film in the heat affected zone (HAZ). This is the first time the sheet resistance and the temperature coefficient of resistance (TCR) of thin film in the HAZ have been characterized. Both thermal and d.c. load accelerated aging tests were performed. The test structures were subjected to the aging for 1000 hours. Based on the test data, we not only evaluated the classical thermal aging model for untrimmed thin film resistors, but also established several empirical thermal aging models for trimmed resistors and d.c. load aging models for both trimmed and untrimmed thin film resistors. All the experiments were carried out for both conventional bar resistors and our new Swiss Cheese (SC) resistors. For the first time, the performance of laser trimmed SC resistors, which was experimentally evaluated, shown a clear superiority over that of trimmed bar resistors. Besides these experiments, we have examined different die attach techniques and their effects on thin film resistors. Also, we have developed a number of hardware systems and software tools, such as a temperature controller, d.c. current source, temperature

  5. Thermal conductivity model for nanoporous thin films

    Science.gov (United States)

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  6. Thin film production method and apparatus

    Science.gov (United States)

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  7. Highly stretchable wrinkled gold thin film wires.

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D; Khine, Michelle

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  8. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  9. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  10. Laser processing for thin-film photovoltaics

    Science.gov (United States)

    Compaan, Alvin D.

    1995-04-01

    Over the past decade major advances have occurred in the field of thin- film photovoltaics (PV) with many of them a direct consequence of the application of laser processing. Improved cell efficiencies have been achieved in crystalline and polycrystalline Si, in hydrogenated amorphous silicon, and in two polycrystalline thin-film materials. The use of lasers in photovoltaics includes laser hole drilling for emitter wrap-through, laser trenching for buried bus lines, and laser texturing of crystalline and polycrystalline Si cells. In thin-film devices, laser scribing is gaining increased importance for module interconnects. Pulsed laser recrystallization of boron-doped hydrogenated amorphous silicon is used to form highly conductive p-layers in p-i-n amorphous silicon cells and in thin-film transistors. Optical beam melting appears to be an attractive method for forming metal semiconductor alloys for contact formation. Finally, pulsed lasers are used for deposition of the entire semiconductor absorber layer in two types of polycrystalline thin-film cells-those based on copper indium diselenide and those based on cadmium telluride. In our lab we have prepared and studied heavily doped polycrystalline silicon thin films and also have used laser physical vapor deposition (LPVD) to prepare 'all-LPVD' CdS/CdTe solar cells on glass with efficiencies tested at NREL at 10.5%. LPVD is highly flexible and ideally suited for prototyping PV cells using ternary or quaternary alloys and for exploring new dopant combinations.

  11. Quantum efficiency as a device-physics interpretation tool for thin-film solar cells

    Science.gov (United States)

    Nagle, Timothy J.

    2007-12-01

    Thin-film solar cells made from CdTe and CIGS p-type absorbers are promising candidates for generating pollution-free electricity. The challenge faced by the thin-film photovoltaics (PV) community is to improve the electrical properties of devices, without straying from low-cost, industry-friendly techniques. This dissertation will focus on the use of quantum-efficiency (QE) measurements to deduce the device physics of thin-film devices, in the hope of improving electrical properties and efficiencies of PV materials. Photons which are absorbed, but not converted into electrical energy can modify the energy bands in the solar cell. Under illumination, photoconductivity in the CdS window layer can result in bands different from those in the dark. QE data presented here was taken under a variety of light-bias conditions. These results suggest that 0.10 sun of white-light bias incident on the CdS layer is usually sufficient to achieve accurate QE results. QE results are described by models based on carrier collection by drift and diffusion, and photon absorption. These models are sensitive to parameters such as carrier mobility and lifetime. Comparing calculated QE curves with experiments, it was determined that electron lifetimes in CdTe are less than 0.1 ns. Lifetime determinations also suggest that copper serves as a recombination center in CdTe. The spatial uniformity of QE results has been investigated with the LBIC apparatus, and several experiments are described which investigate cell uniformity. Electrical variations that occur in solar cells often occur in a nonuniform fashion, and can be detected with the LBIC apparatus. Studies discussed here include investigation of patterned deposition of Cu in back-contacts, the use of high-resistivity TCO layers to mitigate nonuniformity, optical effects, and local shunts. CdTe devices with transparent back contacts were also studied with LBIC, including those that received a strong bromine/dichrol/hydrazine (BDH) etch

  12. Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling.

    Science.gov (United States)

    Simon, F-G; Holm, O; Berger, W

    2013-04-01

    Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources. Copyright © 2013 Elsevier Ltd. All rights reserved.

  13. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    Wintec

    variety of tungstate materials, such as thick-film manga- nese tungstate, have been applied as humidity sensors. (Qu and Mayer 1997). The humidity sensing characteristics of bulk metal oxide–tungsten oxide systems have also been studied in the literature (Ichinose 1993). Thin films of tungsten oxide have been prepared ...

  14. A thin film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, C.J.M.; Wieberdink, Johan W.; Fluitman, J.H.J.; Popma, T.J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  15. Measurements of acoustic properties for thin films

    International Nuclear Information System (INIS)

    Kushibiki, J.; Maehara, H.; Chubachi, N.

    1982-01-01

    A measurement method for determining thin-film acoustic properties, such as characteristic acoustic impedance, sound velocity, density, and stiffness constant, is developed with a simple measurement principle and high measurement accuracy. The acoustic properties are determined from a maximum reflection loss and a center frequency obtained through a frequency response of the reflection loss for an acoustic transmission line composed of a sapphire/film/water system by using the acoustic pulse mode measurement system in the UHF range. The determination of the acoustic properties is demonstrated for sputtered fused quartz film, low-expansion borosilicate glass films, and chalcogenide glass films of evaporated As 2 S 3 and As 2 Se 3 , within the measurement accuracy around 1--2%. It is also found that the acoustic properties of thin films are generally different from those of bulk materials, depending on the fabrication techniques and conditions

  16. Large grain gallium arsenide thin films

    Science.gov (United States)

    Chu, S. S.; Chu, T. L.; Firouzi, H.; Han, Y. X.; Chen, W. J.; Wang, Q. H.

    Polycrystalline gallium arsenide films deposited on tungsten/graphite substrates have been used for the fabrication of thin film solar cells. Gallium arsenide films deposited on foreign substrates of 10 microns or less thickness exhibit, in most cases, pronounced shunting effects due to grain boundaries. MOS solar cells of 9 sq cm area with an AM1 efficiency of 8.5 percent and p(+)/n/n(+) homojunction solar cells of 1 sq cm area with an AM1 efficiency of 8.8 percent have been prepared. However, in order to further improve the conversion efficiency before the development of effective passivation techniques, gallium arsenide films with large and uniform grain structure are necessary. The large grain gallium arsenide films have been prepared by using (1) the arsine treatment of a thin layer of molten gallium on the substrate surface and (2) the recrystallized germanium films on tungsten/graphite as substrates.

  17. Electrochemical fabrication of nanoporous polypyrrole thin films

    International Nuclear Information System (INIS)

    Li Mei; Yuan Jinying; Shi Gaoquan

    2008-01-01

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)

  18. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  19. Polymer surfaces, interfaces and thin films

    International Nuclear Information System (INIS)

    Stamm, M.

    1996-01-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs

  20. Fabrication and characterization of cadmium telluride, lead telluride and cadmium telluride/lead telluride superlattice thin films on Indium Tin Oxide (ITO)/glass substrates

    Science.gov (United States)

    Qin, Fei

    The objective of this work was to fabricate nanolayer films CdTe, PbTe and CdTe/PbTe superlattice structures on Indium Tin Oxide (ITO)/glass substrates. The purpose of this work is aimed at improving the efficiency of solar cells by enhanced optical absorption of light. The optical bandgap properties of the CdTe/PbTe superlattice structures were engineered to be employed as an absorber layer of a solar cell in order to optimize the absorption of the solar spectrum. Electrochemical Atomic Layer Deposition (EC-ALD) has been used to fabricate CdTe, PbTe and three different superlattice structures of CdTe/PbTe thin films on ITO-coated glass: (CdTe20/PbTe20)3, (CdTe10/PbTe20)3 and (CdTe5/PbTe20)3. These are intended to serve as the absorber layer of a solar cell. In our experiments, Cyclic Voltammetry (CV) and current monitoring helped us obtain appropriate deposition potentials. The grain sizes of the superlattices were studied by using Scanning Electron Microscopy (SEM). The chemical composition of the films was determined by Energy-Dispersive X-ray Spectroscopy (EDS). Optical absorption measurements were made in order to determine the band gap energy of the deposited films. We successfully shifted the bandgaps of CdTe/PbTe superlattices on ITO from 1.9 eV to 3.2 eV by changing the proportion of CdTe in the CdTe/PbTe films.

  1. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. (Georgia Inst. of Tech., Atlanta, GA (United States))

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  2. Three-dimensional minority carrier lifetime mapping of thin film semiconductors for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Hardin, Brian [PLANT PV, Inc., Belmont, CA (United States); Peters, Craig [PLANT PV, Inc., Belmont, CA (United States); Barnard, Edward [PLANT PV, Inc., Belmont, CA (United States)

    2015-09-30

    This project addresses the difficulty of accurately measuring charge carrier dynamics in novel semiconductor materials for thin film photovoltaic cells. We have developed a two- photon lifetime tomography technique to separate bulk minority carrier lifetime from surface recombination effects and effects of recombination at sub-surface defects. This technique also enables us to characterize how local defects such as grain boundaries– buried below the surface of a sample–affect carrier lifetimes in the active layer, dynamics that have been previously inaccessible. We have applied this newly developed technique to illuminate how CdCl2 treatment improves CdTe PV efficiency. From striking 3D lifetime tomography maps, a clear, sub- surface understanding emerges of the photophysical changes that occur in CdTe active medium following exposure to CdCl2, a standard step in the fabrication of high-efficiency CdTe-based solar cells. This work demonstrates a well-defined method to quantify grain-boundary, interface, and bulk recombination in CdTe and other optically-active polycrystalline semiconductor materials; information that can provide critical information to the development of next- generation photovoltaics and many other semiconductor technologies.

  3. Restructuring in block copolymer thin films

    DEFF Research Database (Denmark)

    Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

    2017-01-01

    Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

  4. Pulse duration and wavelength effects in laser scribing of thin-film polycrystalline PV materials

    Science.gov (United States)

    Compaan, A. D.; Matulionis, I.; Nakade, S.; Jayamaha, U.

    1997-02-01

    This project is focussed on a study of wavelength-dependent effects and pulse-duration effects on laser scribing of polycrystalline thin-film PV materials. The materials studied here are CdTe, CI(G)S, SnO2, ZnO, molybdenum and gold. This paper provides a summary of thresholds and optimum scribing energy densities for two types of Nd:YAG lasers, a 308 nm excimer laser, and a copper vapor laser. A comparison is presented of glass-side vs. film-side scribing. Discussion is also given of scribing of multilayer films such as ZnO/CIS/moly and gold/CdTe/SnO2.

  5. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    International Nuclear Information System (INIS)

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  6. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Araghi, Houshang, E-mail: araghi@aut.ac.ir [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Zabihi, Zabiholah [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Nayebi, Payman [Department of Physics, College of Technical and Engineering, Saveh Branch, Islamic Azad University, Saveh (Iran, Islamic Republic of); Ehsani, Mohammad Mahdi [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of)

    2016-10-15

    II–VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  7. Critical behavior of ferromagnetic Ising thin films

    International Nuclear Information System (INIS)

    Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

  8. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  9. Dynamics of Polymer Thin Film Mixtures

    Science.gov (United States)

    Besancon, Brian M.; Green, Peter F.; Soles, Christopher L.

    2006-03-01

    We examined the influence of film thickness and composition on the glass transition temperature (Tg) and mean square atomic displacements (MSD) of thin film mixtures of deuterated polystyrene (dPS) and tetramethyl bisphenol-A polycarbonate (TMPC) on Si/SiOx substrates using incoherent elastic neutron scattering (ICNS). The onset of dissipative motions, such as those associated with the glass transition and sub-Tg relaxations, are manifested as ``kinks'' in the curve of elastic intensity (or MSD) versus temperature. From the relevant kinks, the Tg was determined as a function of composition and of film thickness. The dependence of the Tg on film thickness exhibited qualitatively similar trends, at a given composition, as determined by the ICNS and ellipsometry measurements. However, with increasing PS content, the values of Tg measured by INS were consistently larger then those measured by ellipsometry. These results are examined in light of existing models on the thin film glass transition and component blend dynamics.

  10. Thin Films in the Photovoltaic Industry

    International Nuclear Information System (INIS)

    Jaeger-Waldau, A.

    2008-03-01

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  11. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  12. Thermal conductivity of dielectric thin films

    International Nuclear Information System (INIS)

    Lambropoulos, J.C.; Jolly, M.R.; Amaden, C.A.; Gilman, S.E.; Sinicropi, M.J.; Diakomihalis, D.; Jacobs, S.D.

    1989-05-01

    A direct reading thermal comparator has been used to measure the thermal conductivity of dielectric thin film coatings. In the past, the thermal comparator has been used extensively to measure the thermal conductivity of bulk solids, liquids, and gases. The technique has been extended to thin film materials by making experimental improvements and by the application of an analytical heat flow model. Our technique also allows an estimation of the thermal resistance of the film/substrate interface which is shown to depend on the method of film deposition. The thermal conductivity of most thin films was found to be several orders of magnitude lower than that of the material in bulk form. This difference is attributed to structural disorder of materials deposited in thin film form. The experimentation to date has centered primarily on optical coating materials. These coatings, used to enhance the optical properties of components such as lenses and mirrors, are damaged by thermal loads applied in high-power laser applications. It has been widely postulated that there may be a correlation between the thermal conductivity and the damage threshold of these materials. 31 refs., 11 figs., 8 tabs

  13. Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

    Directory of Open Access Journals (Sweden)

    Hongxia Wang

    2011-01-01

    Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

  14. Processing of semiconductors and thin film solar cells using electroplating

    Science.gov (United States)

    Madugu, Mohammad Lamido

    The global need for a clean, sustainable and affordable source of energy has triggered extensive research especially in renewable energy sources. In this sector, photovoltaic has been identified as a cheapest, clean and reliable source of energy. It would be of interest to obtain photovoltaic material in thin film form by using simple and inexpensive semiconductor growth technique such as electroplating. Using this growth technique, four semiconductor materials were electroplated on glass/fluorine-doped tin oxide (FTO) substrate from aqueous electrolytes. These semiconductors are indium selenide (In[x]Sey), zinc sulphide (ZnS), cadmium sulphide (CdS) and cadmium telluride (CdTe). In[x]Se[y] and ZnS were incorporated as buffer layers while CdS and CdTe layers were utilised as window and absorber layers respectively. All materials were grown using two-electrode (2E) system except for CdTe which was grown using 3E and 2E systems for comparison. To fully optimise the growth conditions, the as-deposited and annealed layers from all the materials were characterised for their structural, morphological, optical, electrical and defects structures using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption (UV-Vis spectroscopy), photoelectrochemical (PEC) cell measurements, current-voltage (I-V), capacitance-voltage (C-V), DC electrical measurements, ultraviolet photoelectron spectroscopy (UPS) and photoluminescence (PL) techniques. Results show that InxSey and ZnS layers were amorphous in nature and exhibit both n-type and p-type in electrical conduction. CdS layers are n-type in electrical conduction and show hexagonal and cubic phases in both the as-deposited and after annealing process. CdTe layers show cubic phase structure with both n-type and p-type in electrical conduction. CdTe-based solar cell structures with a n-n heterojunction plus large Schottky barrier, as well as multi-layer graded

  15. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  16. Thin film PV standing tall side-by-side with multi-crystalline silicon: also in terms of reliability

    Science.gov (United States)

    Dhere, Neelkanth G.; Ward, Allan; Wieting, Robert; Guha, Subhendu; Dhere, Ramesh G.

    2015-09-01

    Triple junction hydrogenated amorphous silicon (a-Si:H) have shown exceptionally good reliability and durability. Cadmium telluride, CdTe PV modules have shown the lowest production cost without subsidies. Copper-indium gallium selenide sulfide (CIGS) and cadmium telluride (CdTe) cells and modules have been showing efficiencies equal or greater than those of multi-crystalline, (mx-Si), PV modules. Early generation CIGS and CdTe PV modules had a different qualification standard 61646 as compared to 61215 for crystalline silicon, (c-Si), PV modules. This, together with small vulnerability in harsh climates, was used to create doubts about their reliability. Recently CdTe and CIGS glass-to-glass modules have passed the rigorous accelerated tests, especially as long as the edge seals are not compromised. Moreover, the cumulative shipment of these modules is more than 12 GW demonstrating the customer confidence in these products. Hence it can be stated that also in terms of the reliability and durability all the thin film PV modules stand tall and compare favorably with mx-Si.

  17. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  18. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  19. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  20. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  1. Capillary stress in microporous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Samuel, J.; Hurd, A.J.; Frink, L.J.D.; Swol, F. van [Sandia National Labs., Albuquerque, NM (United States); Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States). Ceramic Processing Science Dept.]|[Univ. of New Mexico, Albuquerque, NM (United States). Center for Micro Engineering Ceramics; Raman, N.K. [Univ. of New Mexico, Albuquerque, NM (United States). Center for Micro Engineered Ceramics

    1996-06-01

    Development of capillary stress in porous xerogels, although ubiquitous, has not been systematically studied. The authors have used the beam bending technique to measure stress isotherms of microporous thin films prepared by a sol-gel route. The thin films were prepared on deformable silicon substrates which were then placed in a vacuum system. The automated measurement was carried out by monitoring the deflection of a laser reflected off the substrate while changing the overlying relative pressure of various solvents. The magnitude of the macroscopic bending stress was found to reach a value of 180 MPa at a relative pressure of methanol, P/Po = 0.001. The observed stress is determined by the pore size distribution and is an order of magnitude smaller in mesoporous thin films. Density Functional Theory (DFT) indicates that for the microporous materials, the stress at saturation is compressive and drops as the relative pressure is reduced.

  2. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  3. The future of rare earth thin films

    International Nuclear Information System (INIS)

    Gasgnier, M.

    1986-01-01

    This paper presents some recent applications in the rare earth field and also may be, some of the future new developments of laboratory works. The field of investigations will concern only materials which contain at least one rare earth element (lanthanide series, from La to Lu, Sc and Y). After a rapid survey of the experimental procedures relative to the preparation and to the analytical characterization of thin films, technological applications in various fields of research are briefly reviewed: for polycrystalline metals (superconductors, neutron absorption, photovoltaic effect...), alloys (hydrogen storage, superconductors) and compounds (target for intense neutron sources, radiology...) and for amorphous magnetic thin films. 81 refs [fr

  4. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...... and strain sensitivity using two- and four-point measurement method. We have found that polyaniline has a negative gauge factor of K = -4.9, which makes it a candidate for piezoresistive read-out in polymer based MEMS-devices. (C) 2007 Elsevier B.V. All rights reserved....

  5. Micro-sensor thin-film anemometer

    Science.gov (United States)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  6. A generalized theory of thin film growth

    Science.gov (United States)

    Du, Feng; Huang, Hanchen

    2018-03-01

    This paper reports a theory of thin film growth that is generalized for arbitrary incidence angle during physical vapor deposition in two dimensions. The accompanying kinetic Monte Carlo simulations serve as verification. A special theory already exists for thin film growth with zero incidence angle, and another theory also exists for nanorod growth with a glancing angle. The theory in this report serves as a bridge to describe the transition from thin film growth to nanorod growth. In particular, this theory gives two critical conditions in analytical form of critical coverage, ΘI and ΘII. The first critical condition defines the onset when crystal growth or step dynamics stops following the wedding cake model for thin film growth. The second critical condition defines the onset when multiple-layer surface steps form to enable nanorod growth. Further, this theory also reveals a critical incidence angle, below which nanorod growth is impossible. The critical coverages, together with the critical incidence angle, defines a phase diagram of thin growth versus nanorod growth.

  7. Lattice Mismatch in Crystalline Nanoparticle Thin Films.

    Science.gov (United States)

    Gabrys, Paul A; Seo, Soyoung E; Wang, Mary X; Oh, EunBi; Macfarlane, Robert J; Mirkin, Chad A

    2018-01-10

    For atomic thin films, lattice mismatch during heteroepitaxy leads to an accumulation of strain energy, generally causing the films to irreversibly deform and generate defects. In contrast, more elastically malleable building blocks should be better able to accommodate this mismatch and the resulting strain. Herein, that hypothesis is tested by utilizing DNA-modified nanoparticles as "soft," programmable atom equivalents to grow a heteroepitaxial colloidal thin film. Calculations of interaction potentials, small-angle X-ray scattering data, and electron microscopy images show that the oligomer corona surrounding a particle core can deform and rearrange to store elastic strain up to ±7.7% lattice mismatch, substantially exceeding the ±1% mismatch tolerated by atomic thin films. Importantly, these DNA-coated particles dissipate strain both elastically through a gradual and coherent relaxation/broadening of the mismatched lattice parameter and plastically (irreversibly) through the formation of dislocations or vacancies. These data also suggest that the DNA cannot be extended as readily as compressed, and thus the thin films exhibit distinctly different relaxation behavior in the positive and negative lattice mismatch regimes. These observations provide a more general understanding of how utilizing rigid building blocks coated with soft compressible polymeric materials can be used to control nano- and microstructure.

  8. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  9. Silver buffer layers for YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Tel Aviv Univ. (Israel). Center for Technol. Education Holon

    1999-09-01

    A simple economical conventional vacuum system was used for evaporation of YBCO thin films on as-deposited unbuffered Ag layers on MgO substrates. The subsequent heat treatment was carried out in low oxygen partial pressure at a relative low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using dc four probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). (orig.)

  10. Mechanical integrity of thin films

    International Nuclear Information System (INIS)

    Hoffman, R.W.

    1979-01-01

    Mechanical considerations starting with the initial film deposition including questions of adhesion and grading the interface are reviewed. Growth stresses, limiting thickness, stress relief, control aging, and creep are described

  11. Accessing the quantum palette: quantum-dot spectral conversion towards the BIPV application of thin-film micro-modules

    Science.gov (United States)

    Hodgson, S. D.; Kartopu, G.; Rugen-Hankey, S. L.; Clayton, A. J.; Barrioz, V.; Irvine, S. J. C.

    2015-10-01

    To demonstrate the potential for building integrated photovoltaics (BIPV) incorporation of thin-film photovoltaics, commercially available quantum dots (QDs) have been deposited, as part of a poly(methyl methacrylate) (PMMA) composite film, on a cadmium telluride (CdTe) micro-module. This resulted in an increase in photocurrent generation through the luminescent down-shifting (LDS) process. The optical properties of these films were characterized through UV-vis spectroscopy. The impact of the film on the micro-module was studied through current-voltage (I-V) and external quantum efficiency measurements. Further layers were added to the initial single-layer LDS film, however no additional improvement to the micro-module were observed. Additionally, a range of emission wavelengths have been explored. The majority of these films, when tested on a CdTe device, were shown to improve the photocurrent generation whilst also visually displaying the vivid colour palette provided by quantum confined materials. The future feasibility of using QD based LDS films for large scale BIPV-based power generation has also been discussed.

  12. Mesoscale simulations of confined Nafion thin films

    Science.gov (United States)

    Vanya, P.; Sharman, J.; Elliott, J. A.

    2017-12-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  13. Magnetocaloric effect of thin Terbium films

    Science.gov (United States)

    Mello, V. D.; Anselmo, D. H. A. L.; Vasconcelos, M. S.; Almeida, N. S.

    2017-12-01

    We report a theoretical study of the magnetocaloric effect of Terbium (Tb) thin films due to finite size and surface effects in the helimagnetic phase, corresponding to a temperature range from TC=219 K to TN=231 K, for external fields of the order of kOe. For a Tb thin film of 6 monolayers submitted to an applied field (ΔH =30 kOe, ΔH =50 kOe and ΔH = 70 kOe) we report a significative change in adiabatic temperature, ΔT / ΔH , near the Néel temperature, of the order ten times higher than that observed for Tb bulk. On the other hand, for small values of the magnetic field, large thickness effects are found. For external field strength around few kOe, we have found that the thermal caloric efficiency increases remarkably for ultrathin films. For an ultrathin film with 6 monolayers, we have found ΔT / ΔH = 43 K/T while for thicker films, with 20 monolayers, ΔT / ΔH = 22 K/T. Our results suggest that thin films of Tb are a promising material for magnetocaloric effect devices for applications at intermediate temperatures.

  14. Optical characterization of niobium pentoxide thin films

    International Nuclear Information System (INIS)

    Pawlicka, A.

    1996-01-01

    Thin films of Nb 2 O 5 were obtained by sol-gel method using ultrasonic irradiation and deposited by dip-coating technique. After calcination at temperatures superior than 500 deg C these films (300 nm thick) were characterized by cyclic voltametry and cronoamperometry. The memory measurements, color efficiency, optical density as a function of wave number and applied potential were effectuated to determine their electrochromic properties. The study of electrochromic properties of these films shows that the insertion process of lithium is reversible and changes their coloration from transparent (T=80%) to dark blue (T=20%). (author)

  15. High-efficiency, flexible CdTe solar cells on ultra-thin glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mahabaduge, H. P.; Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Meysing, D. M.; Wolden, C. A.; Li, J.; Beach, J. D. [Colorado School of Mines, Golden, Colorado 80401 (United States); Garner, S. [Corning, Inc., Corning, New York 14831 (United States)

    2015-03-30

    Flexible, high-efficiency, low-cost solar cells can enable applications that take advantage of high specific power, flexible form factors, lower installation and transportation costs. Here, we report a certified record efficiency of 16.4% for a flexible CdTe solar cell that is a marked improvement over the previous standard (14.05%). The improvement was achieved by replacing chemical-bath-deposited CdS with sputtered CdS:O and also replacing the high-temperature sputtered ZnTe:Cu back contact layer with co-evaporated and rapidly annealed ZnTe:Cu. We use quantum efficiency and capacitance-voltage measurements combined with device simulations to identify the reasons for the increase in efficiency. Both device simulations and experimental results show that higher carrier density can quantitatively account for the increased open circuit voltage (V{sub OC}) and Fill Factor (FF), and likewise, the increase in short circuit current density (J{sub SC}) can be attributed to the more transparent CdS:O.

  16. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  17. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  18. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  19. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and

  20. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  1. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...

  2. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic

  3. Thin film hydrous metal oxide catalysts

    Science.gov (United States)

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  4. Polyaniline. Thin films and colloidal dispersions

    Czech Academy of Sciences Publication Activity Database

    Stejskal, Jaroslav; Sapurina, I.

    2005-01-01

    Roč. 77, č. 5 (2005), s. 815-826 ISSN 0033-4545 R&D Projects: GA MŠk ME 539; GA AV ČR IAA4050313 Grant - others:IUPAC project 2002-019-1-400 Keywords : polyaniline * thin films * dispersions Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.679, year: 2005

  5. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric

  6. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  7. Flexoelectricity in barium strontium titanate thin film

    International Nuclear Information System (INIS)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning; Shu, Longlong; Maria, Jon-Paul

    2014-01-01

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba 0.7 Sr 0.3 TiO 3 thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  8. Magnetic surfaces, thin films, and multilayers

    International Nuclear Information System (INIS)

    Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

    1992-01-01

    This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

  9. Functional planar thin film optical waveguide lasers

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav

    2012-01-01

    Roč. 9, č. 2 (2012), 91-99 ISSN 1612-2011 R&D Projects: GA ČR(CZ) GAP106/10/1477 Institutional research plan: CEZ:AV0Z10100522 Keywords : waveguide laser * planar waveguides * thin films * pulsed laser deposition * optical waveguides * laser materials Subject RIV: BH - Optics, Masers, Lasers Impact factor: 7.714, year: 2012

  10. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  11. Gravitationally driven drainage of thin films

    Science.gov (United States)

    Naire, Shailesh

    In this thesis we develop theory for an experiment done by Snow and coworkers at Dow Corning that involves a vertically-oriented, thinned polyurethane film with silicone surfactant, draining under gravity. We present the mathematical formulation for a 1+1- and 2+1-dimensional model to study the evolution of a vertically-oriented thin liquid film draining under gravity when there is an insoluble surfactant with finite surface viscosity on its free surface. This formulation has all the ingredients that include: surface tension, gravity, surface viscosity, the Marangoni effect, convective and diffusive surfactant transport; essential to describe the behavior of a vertical draining film with surfactant. We study a hierarchy of mathematical models with increasing complexity starting with the flat film model where gravity balances viscous shear and surface tension is neglected, this is generalized to include surface tension. We further generalize to incorporate variable surface viscosity and more complicated constitutive laws for surface tension as a function of surfactant concentration. Lubrication theory is employed to derive three coupled nonlinear partial differential equations (PDEs) describing the free surface shape, a component of surface velocity and the surfactant transport at leading order. A large surface viscosity limit recovers the tangentially-immobile model; for small surface viscosity, the film is mobile. Transition from a mobile to an immobile film is observed for intermediate values of surface viscosity and Marangoni number. The above models reproduce a number of features observed in experiments, these include film shapes and thinning rates which can be correlated to experiment. The 2+1-dimensional model for simplified surface properties has also been studied. Numerical experiments were performed to understand the stability of the system to perturbations across the film. An instability was seen in the mobile case; this was caused by a competition

  12. Thin film preparation of semiconducting iron pyrite

    Science.gov (United States)

    Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

    1990-08-01

    Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.

  13. Study of zinc oxide thin film characteristics

    Directory of Open Access Journals (Sweden)

    Johari Shazlina

    2017-01-01

    Full Text Available This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influenced by the film thickness, substrate used and annealed temperature and the averages are all above 80%. On surface morphology observed by AFM and FESEM, the results show that the increase of film thickness and annealed temperature will increase the mean grain size, surface-to-volume ration and RMS roughness. Besides that, higher annealing temperature cause the crystalline quality to gradually improve and the wurtzite structure of ZnO can be seen more clearly. Nonetheless, the substrate used had no effect on surface morphology, yet the uniformity of deposition on silicon wafer is better than glass and quartz.

  14. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  15. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films and bulk hosts are also discussed. Keywords. Alkali metal; thin films; magnetism; density functional ...

  16. Optical and electrical properties of nickel xanthate thin films

    Indian Academy of Sciences (India)

    Keywords. Nickel xanthate thin film; organometallic thin film; chemical bath deposition. Abstract. Nickel xanthate thin films (NXTF) were successfully deposited by chemical bath deposition, on to amorphous glass substrates, as well as on - and -silicon, indium tin oxide and poly(methyl methacrylate). The structure of the ...

  17. Electrochemical fabrication of nanoporous polypyrrole thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

    2008-04-30

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)

  18. Molecular solution processing of metal chalcogenide thin film solar cells

    Science.gov (United States)

    Yang, Wenbing

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum

  19. Thin film diamond microstructure applications

    Science.gov (United States)

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  20. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta [Panjab University, Department of Physics, Center of Advanced Study in Physics, Chandigarh (India)

    2014-10-25

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  1. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    International Nuclear Information System (INIS)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta

    2015-01-01

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  2. Flexible magnetic thin films and devices

    Science.gov (United States)

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  3. Nanocomposite thin films for triggerable drug delivery.

    Science.gov (United States)

    Vannozzi, Lorenzo; Iacovacci, Veronica; Menciassi, Arianna; Ricotti, Leonardo

    2018-05-01

    Traditional drug release systems normally rely on a passive delivery of therapeutic compounds, which can be partially programmed, prior to injection or implantation, through variations in the material composition. With this strategy, the drug release kinetics cannot be remotely modified and thus adapted to changing therapeutic needs. To overcome this issue, drug delivery systems able to respond to external stimuli are highly desirable, as they allow a high level of temporal and spatial control over drug release kinetics, in an operator-dependent fashion. Areas covered: On-demand drug delivery systems actually represent a frontier in this field and are attracting an increasing interest at both research and industrial level. Stimuli-responsive thin films, enabled by nanofillers, hold a tremendous potential in the field of triggerable drug delivery systems. The inclusion of responsive elements in homogeneous or heterogeneous thin film-shaped polymeric matrices strengthens and/or adds intriguing properties to conventional (bare) materials in film shape. Expert opinion: This Expert Opinion review aims to discuss the approaches currently pursued to achieve an effective on-demand drug delivery, through nanocomposite thin films. Different triggering mechanisms allowing a fine control on drug delivery are described, together with current challenges and possible future applications in therapy and surgery.

  4. Nanostructured thin film coatings with different strengthening effects

    Directory of Open Access Journals (Sweden)

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  5. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  6. Investigation of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Mortensen, Emma L.

    This dissertation focuses on improvements to electrodeposited cuprous oxide as a candidate for the absorber layer for a thin film solar cell that could be integrated into a mechanical solar cell stack. Cuprous oxide (Cu2O) is an earth abundant material that has a bandgap of 2 eV with absorption coefficients around 102-106 cm-1. This bandgap is not optimized for use as a single-junction solar cell, but could be ideal for use in a tandem solar cell device. The theoretical efficiency of a material with a bandgap of 2.0 eV is 20%. The greatest actual efficiency that has been achieved for a Cu2O solar cell is only 8.1%. For the present work the primary focus has been on improving the microstructure of the absorber layer film. The Cu2O films were fabricated using electrodeposition. A seeding layer was developed using gold (Au); which was manipulated into nano-islands and used as the substrate for the Cu2O electrodeposition. The films were characterized and compared to determine the growth mechanism of each film using scanning electron microscopy (SEM). X-ray diffraction (XRD) was used to establish and compare the chemical phases that were present in each of the films. The crystal structure of the Cu2O film grown on gold was explored using transmission electron microscopy (TEM), and this helped confirm the effect that the gold had on the growth of Cu2O. The Tauc method was then used to determine the bandgap of the films of Cu2O grown on both substrates and this showed that the Au based Cu2O film was a superior film. Electrical tests were also completed using a solar simulator and this established that the film grown on gold exhibited photoconductivity that was not seen on the film without gold. In addition, for this thesis, a method for depositing an n-type Cu2O film, based on a Cu-metal solution-boiling process, was investigated. Three forms of copper were tested: a sheet of copper, electrodeposited copper, and sputtered copper. The chemical phases were observed using

  7. Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

    International Nuclear Information System (INIS)

    Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

    2004-01-01

    Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  9. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  10. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  11. Optical Parameters of Spray-Deposited CdS1- y Te y Thin Films

    Science.gov (United States)

    Ikhmayies, Shadia J.

    2017-02-01

    CdS x Te1- x and CdS1- y Te y solid solutions are usually formed in the interfacial region in CdS/CdTe solar cells during the deposition of the CdTe layer and/or the processing steps of the device. In this work, indium-doped CdS1- y Te y thin films were prepared by first producing CdS:In thin films by the spray pyrolysis technique on glass substrates, then annealing the films in nitrogen atmosphere in the presence of elemental tellurium. The films were characterized by scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmittance measurements. The transmittance was used to deduce the reflectance from which the optical parameters were computed. The extinction coefficient, refractive index, the real and imaginary parts of the dielectric constant, optical conductivity, and energy loss were computed, and their dependence on the composition was investigated. In addition, the dispersion of the refractive index was analyzed by the single oscillator model, and dispersion parameters were investigated.

  12. Substrate heater for thin film deposition

    Science.gov (United States)

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  13. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  14. Quantifying clustering in disordered carbon thin films

    International Nuclear Information System (INIS)

    Carey, J.D.

    2006-01-01

    The quantification of disorder and the effects of clustering in the sp 2 phase of amorphous carbon thin films are discussed. The sp 2 phase is described in terms of disordered nanometer-sized conductive sp 2 clusters embedded in a less conductive sp 3 matrix. Quantification of the clustering of the sp 2 phase is estimated from optical as well as from electron and nuclear magnetic resonance methods. Unlike in other disordered group IV thin film semiconductors, we show that care must be exercised in attributing a meaning to the Urbach energy extracted from absorption measurements in the disordered carbon system. The influence of structural disorder, associated with sp 2 clusters of similar size, and topological disorder due to undistorted clusters of different sizes is also discussed. Extensions of this description to other systems are also presented

  15. Thin film photovoltaic panel and method

    Science.gov (United States)

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  16. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  17. Thin films for gas sensors

    Science.gov (United States)

    Pires, Jose Miguel Alves Correia

    Nos ultimos anos tem-se assistido a um aumento dos investimentos na investigacao de novos materiais para aplicacao em sensores. Apesar de ja existir um bom numero de dispositivos explorados comercialmente, muitas vezes, quer devido aos elevados custos de producao, quer devido a uma crescente exigencia do ponto de vista das caracteristicas de funcionamento, continua a ser necessario procurar novos materiais ou novas formas de producao que permitam baixar os custos e melhorar o desempenho dos dispositivos. No campo dos sensores de gases tem-se verificado continuos avancos nos ultimos anos. Continua todavia a ser necessario conhecer melhor, tanto os processos de producao dos materiais, como os mecanismos que regulam a sensibilidade dos dispositivos aos gases, de modo a orientar adequadamente a investigacao dos novos materiais, nomeadamente no que se refere a optimizacao dos parâmetros que nao satisfazem ainda os requisitos do mercado. Um dos materiais que tem mostrado melhores qualidades para aplicacao em sensores de gases de tipo resistivo e o dioxido de estanho. Este material tem sido produzido sob diversas formas e usando diferentes tecnicas, como sejam: sol-gel [1], pulverizacao catodica (sputtering) por magnetrao [2-4], sinterizacao de pos [5, 6], ablacao laser [7] ou RGTO [8]. Os resultados obtidos revelam que as caracteristicas dos dispositivos sao muito dependentes das tecnicas usadas na sua producao. A deposicao usando sputtering reactivo por magnetrao e uma tecnica que permite obter filmes finos de oxido de estanho com diferentes caracteristicas, quer do ponto de vista da estrutura, quer da composicao, e por isso, tambem, com diferentes sensibilidades aos gases. No âmbito deste trabalho, foram produzidos filmes de SnO2 usando sputtering DC reactivo com diferentes condicoes de deposicao. Os substratos usados foram lâminas de vidro e o alvo foi estanho com 99.9% de pureza. Foi estudada a influencia da atmosfera de deposicao, da pressao parcial do O2, da

  18. The carbonization of thin polyaniline films

    Czech Academy of Sciences Publication Activity Database

    Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

    2012-01-01

    Roč. 520, č. 19 (2012), s. 6088-6094 ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

  19. Thin film interfaces for microelectrochemical sensors

    Science.gov (United States)

    Tvarozek, Vladimir; Ivanic, Rastislav; Jakubec, Andrej; Novotny, Ivan; Rehacek, Vlastimil

    2001-09-01

    Planar microelectrochemical chips with thin film electodes of different shapes and arrangement, have been developed and fabricated. Micro electrochemical cell with closely vertically spaced electrodes allows to exploit the effect of redox recycling and an increase of collection efficiency for a high current amplification. PC simulations of electro- mechanical properties of sl-BLM is useful tool for evaluation and prediction of BLM behavior. Non-symmetric microelectrode arrays were designed and fabricated for electrical monitoring of human skin.

  20. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building -integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  1. Mesoscale simulations of confined Nafion thin films

    OpenAIRE

    Vanya, Peter; Sharman, Jonathan; Elliott, James A.

    2017-01-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane-electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains with carbon and quartz as confining materials for a wide range of operational water contents and...

  2. Mesoscale simulations of confined Nafion thin films

    OpenAIRE

    Vanya, Peter; Sharman, J; Elliott, James Arthur

    2017-01-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains with carbon and quartz as confining materials for a wide range of operational water contents and...

  3. Optical characterization of thin solid films

    CERN Document Server

    Ohlídal, Miloslav

    2018-01-01

    This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

  4. P-type CuxS thin films: Integration in a thin film transistor structure

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

    2013-01-01

    Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

  5. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  6. Multiferroic RMnO3 thin films

    Science.gov (United States)

    Fontcuberta, Josep

    2015-03-01

    Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress, providing a suitable platform to tailor spin-spin and spin-lattice interactions. With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO3 epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments. En ce qui concerne les applications, le développement de films minces de matériaux multiferroïques a aussi énormément progressé, et de nos jours des films minces de manganites avec des propriétés similaires à celles des matériaux massifs existent. Nous passons en revue ici les résultats obtenus dans le domaine de la croissance de couches minces épitaxiés de RMnO3 hexagonal et orthorhombique et de la caractérisation de leurs propriétés magnétiques et ferroélectriques. Nous discutons certains enjeux et proposons quelques idées pour des recherches et développements futurs.

  7. Additives to silane for thin film silicon photovoltaic devices

    Science.gov (United States)

    Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

    2013-09-17

    Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

  8. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  9. Thermal properties of methyltrimethoxysilane aerogel thin films

    Directory of Open Access Journals (Sweden)

    Leandro N. Acquaroli

    2016-10-01

    Full Text Available Aerogels are light and porous solids whose properties, largely determined by their nanostructure, are useful in a wide range of applications, e.g., thermal insulation. In this work, as-deposited and thermally treated air-filled silica aerogel thin films synthesized using the sol-gel method were studied for their thermal properties using the 3-omega technique, at ambient conditions. The thermal conductivity and diffusivity were found to increase as the porosity of the aerogel decreased. Thermally treated films show a clear reduction in thermal conductivity compared with that of as-deposited films, likely due to an increase of porosity. The smallest thermal conductivity and diffusivity found for our aerogels were 0.019 W m−1 K−1 and 9.8 × 10-9 m2 s−1. A model was used to identify the components (solid, gaseous and radiative of the total thermal conductivity of the aerogel.

  10. Deposition and characterization of ZnSe nanocrystalline thin films

    Science.gov (United States)

    Temel, Sinan; Gökmen, F. Özge; Yaman, Elif; Nebi, Murat

    2018-02-01

    ZnSe nanocrystalline thin films were deposited at different deposition times by using the Chemical Bath Deposition (CBD) technique. Effects of deposition time on structural, morphological and optical properties of the obtained thin films were characterized. X-ray diffraction (XRD) analysis was used to study the structural properties of ZnSe nanocrystalline thin films. It was found that ZnSe thin films have a cubic structure with a preferentially orientation of (111). The calculated average grain size value was about 28-30 nm. The surface morphology of these films was studied by the Field Emission Scanning Electron Microscope (FESEM). The surfaces of the thin films were occurred from small stacks and nano-sized particles. The band gap values of the ZnSe nanocrystalline thin films were determined by UV-Visible absorption spectrum and the band gap values were found to be between 2.65-2.86 eV.

  11. Structural and photocarrier radiometric characterization of Cux(CdTe)yOz thin films growth by reactive sputtering

    International Nuclear Information System (INIS)

    Velazquez-Hernandez, R.; Rojas-Rodriguez, I.; Carmona-Rodriguez, J.; Jimenez-Sandoval, S.; Rodriguez-Garcia, M.E.

    2011-01-01

    This research presents a structural and photocarrier radiometric (PCR) characterization of Cu x (CdTe) y O z thin films grown using reactive radiofrequency co-sputtering. Electronic distribution induced by variations in dopant concentration as a function of the position was studied using photocarrier radiometric images. Optical and structural characterization of these thin films was carried out by using micro Raman spectroscopy and X-ray diffraction. Due to its nondestructive and noncontact characteristics, the PCR is an excellent technique that permits one to obtain details of lateral electronic distribution across the sample. It was found that Cu target power influences the electronic distribution and produces different phases such as Cu 2 Te and CdO.

  12. Depth profile characterization of electrodeposited multi-thin-film structures by low angle of incidence X-ray diffractometry

    International Nuclear Information System (INIS)

    Nauer, M.; Ernst, K.; Kautek, W.; Neumann-Spallart, M.

    2005-01-01

    Typical structures of heterojunction photovoltaic cells were prepared by sequential electrodeposition of II-VI semiconductor thin films on a transparent conductor, SnO 2 on glass. The structures comprised a wide bandgap window, ZnSe or ZnTe, a medium bandgap light absorber, CdTe, and an ohmic back contact. It is demonstrated that low incidence angle X-ray diffraction (LIXD) can be successfully used as a process monitoring tool, featuring non-destructive depth profiling and phase characterization of such thin film structures. LIXD results are compared to Secondary Ion Mass Spectroscopy (SIMS) and Scanning Electron Microscopy (SEM) data. Both, SIMS and SEM, corroborate the LIXD results as to layer sequence and presence/absence of intermixing

  13. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  14. Photoelectrochemical (PEC) studies on CdSe thin films ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Thin films of CdSe were deposited by potentiostatic mode on different substrates such as stainless steel, titanium and fluorine tin–oxide (FTO) coated glass using non-aqueous bath. The preparative parameters were optimized to get good quality CdSe thin films. These films were characterized by X-ray diffraction.

  15. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Infrared spectroscopic study reveals that films grown above 600°C are free of carbon. Keywords. MOCVD; thin films .... Simultaneous thermogravimetry and differential thermal analysis (TG/DTA) of the complex was carried ..... quality thin films of rare earth oxides by MOCVD, using the phenanthroline adducts of pentadionate ...

  16. Dynamics of a spreading thin film with gravitational counterflow ...

    Indian Academy of Sciences (India)

    In the present work, dynamics of a thin film spreading due to a thermocapillary stress is mod- eled within lubrication approximation. In microscale flows, the large surface to volume ratios allow interfacial stresses to exert a driving influence. This ability to drive thin film using thermo- capillary stress is used to spread film for ...

  17. Structural characterization of vacuum evaporated ZnSe thin films

    Indian Academy of Sciences (India)

    The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...

  18. Lasers and beam delivery options for polycrystalline thin-film scribing

    Science.gov (United States)

    Compaan, A. D.; Matulionis, I.; Nakade, S.

    1999-03-01

    We have investigated the use of several different types of lasers for scribing of the thin film materials: CdTe, CuInGaSe2, ZnO, SnO2, Mo, Al, and Au. The lasers included several types of Nd: YAG (1064 and 532 nm wavelengths), Cu vapor (511/578 nm), XeCl excimer (308 nm), and KrF excimer (248 nm). Pulse durations ranged from ˜0.1 nsec to ˜250 ns. We found that the Nd: YAG systems work well for almost all of the above materials except for the transparent conductor ZnO, for which the two excimer lasers showed good performance. Pulse duration was found generally not to be critical except for the case of CIGS on Mo where longer pulse durations appear advantageous.

  19. Temperature-Dependent Light-Stabilized States in Thin-Film PV Modules: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Deceglie, Michael G.; Silverman, Timothy J.; Marion, Bill; Kurtz, Sarah R.

    2015-09-17

    Thin-film photovoltaic modules are known to exhibit light-induced transient behavior which interferes with accurate and repeatable measurements of power. Typically power measurements are made after a light exposure in order to target a 'light state' of the module that is representative of outdoor performance. Here we show that the concept of a unique light state is poorly defined for both CIGS and CdTe modules. Instead we find that their metastable state after a light exposure can depend on the temperature of the module during the exposure. We observe changes in power as large as 5.8% for a 20 degrees C difference in light exposure temperature. These results lead us to conclude that for applications in which reproducibility and repeatability are critical, module temperature should be tightly controlled during light exposure.

  20. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  1. Porous Organic Cage Thin Films and Molecular-Sieving Membranes.

    Science.gov (United States)

    Song, Qilei; Jiang, Shan; Hasell, Tom; Liu, Ming; Sun, Shijing; Cheetham, Anthony K; Sivaniah, Easan; Cooper, Andrew I

    2016-04-06

    Porous organic cage molecules are fabricated into thin films and molecular-sieving membranes. Cage molecules are solution cast on various substrates to form amorphous thin films, with the structures tuned by tailoring the cage chemistry and processing conditions. For the first time, uniform and pinhole-free microporous cage thin films are formed and demonstrated as molecular-sieving membranes for selective gas separation. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Solution processed pentacene thin films and their structural properties

    International Nuclear Information System (INIS)

    Tao Chunlan; Zhang Xuhui; Zhang Fujia; Liu Yiyang; Zhang Haoli

    2007-01-01

    The paper reported the solution process of pentacene thin films from organic solvent O-dichlorobenzene. The pentacene thin films obtained from different conditions were characterized by X-ray diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), and UV-vis spectroscopy. The result shows that the pentacene solution was successfully obtained at a minimum temperature of 40 deg. C. The optimum temperature of forming pentacene thin films was 100 deg. C

  3. Effects of cadmium salts on the structure, morphology and optical properties of acidic chemical bath deposited CdS thin films

    International Nuclear Information System (INIS)

    Cao, M.; Sun, Y.; Wu, J.; Chen, X.; Dai, N.

    2010-01-01

    Research highlights: → N-type semiconducting CdS thin films have been widely used as a window layer in the solar cells. CdS thin films prepared by chemical bath deposition (CBD) have been used in CdTe and CIGS based solar cells. Among existing techniques, CBD was simple and inexpensive to deposit CdS thin films for mass production. Typically, the CBD process for CdS films is carried out in an alkaline aqueous solution comprised of thiourea and ammonia. Recently, CBD process in acidic solutions has been developed and used for the optimization of CdS thin films. However, the effects of the variables for the acidic CBD, especially, the dependence on cadmium salts, have not been investigated systematically. In this paper, we studied the growth process, structure, morphology and optical properties of CdS thin films deposited using different cadmium salts, which is helpful for the optimization of growth condition for high quality CdS thin films used in solar cells. Acidic CBD-CdS thin films were prepared by using different cadmium salts. A post-annealing process at 380 o C was used to improve crystal quality. The CdS-C i thin films have the highest deposition rate than other films obtained by different solution, which is due to an easier releasing rate for Cd(CH 3 COO) 2 than the CdCl 2 and CdSO 4 solutions. CdS-Cl i thin films have a relatively larger band gaps and better qualities. Strong PL spectra at room temperature confirm the good quality of the CdS thin films. - Abstract: CdS thin films were deposited from different cadmium salts by using acidic chemical bath deposition (CBD) process. Quality characterizations were performed using different methods such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL). The crystal quality of CdS thin films was improved after CdCl 2 thermal annealing at 380 o C. A compact structure of CdS thin films can be obtained by using CdCl 2 in comparison with the other cadmium salts. Although a Cd

  4. Review of the fundamentals of thin-film growth.

    Science.gov (United States)

    Kaiser, Norbert

    2002-06-01

    The properties of a thin film of a given material depend on the film's real structure. The real structure is defined as the link between a thin film's deposition parameters and its properties. To facilitate engineering the properties of a thin film by manipulating its real structure, thin-film formation is reviewed as a process starting with nucleation followed by coalescence and subsequent thickness growth, all stages of which can be influenced by deposition parameters. The focus in this review is on dielectric and metallic films and their optical properties. In contrast to optoelectronics all these film growth possibilities for the engineering of novel optical films with extraordinary properties are just beginning to be used.

  5. Progress on thin-film sensors for space propulsion technology

    Science.gov (United States)

    Kim, Walter S.

    1987-01-01

    The objective is to develop thin-film thermocouples for Space Shuttle Main Engine (SSME) components. Thin-film thermocouples have been developed for aircraft gas turbine engines and are in use for temperature measurement on turbine blades to 1800 F. The technology established for aircraft gas turbine engines will be adapted to the materials and environment encountered in the SSME. Specific goals are to expand the existing in-house thin-film sensor technology and to test the survivability and durability of thin-film sensors in the SSME environment.

  6. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  7. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  8. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  9. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  10. Seebeck effect of some thin film carbides

    International Nuclear Information System (INIS)

    Beensh-Marchwicka, G.; Prociow, E.

    2002-01-01

    Several materials have been investigated for high-temperature thin film thermocouple applications. These include silicon carbide with boron (Si-C-B), ternary composition based on Si-C-Mn, fourfold composition based on Si-C-Zr-B and tantalum carbide (TaC). All materials were deposited on quartz or glass substrates using the pulse sputter deposition technique. Electrical conduction and thermoelectric power were measured for various compositions at 300-550 K. It has been found, that the efficiency of thermoelectric power of films containing Si-C base composition was varied from 0.0015-0.034 μW/cmK 2 . However for TaC the value about 0.093 μW/cmK 2 was obtained. (author)

  11. TEM characterization of nanodiamond thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  12. Thin Film Photovoltaics: Markets and Industry

    OpenAIRE

    Jäger-Waldau, Arnulf

    2012-01-01

    Since 2000, total PV production increased almost by two orders of magnitude, with a compound annual growth rate of over 52%. The most rapid growth in annual cell and module production over the last five years could be observed in Asia, where China and Taiwan together now account for about 60% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for s...

  13. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  14. Thin molecular films of supramolecular porphyrins

    Directory of Open Access Journals (Sweden)

    KOITI ARAKI

    2000-03-01

    Full Text Available A relevant series of symmetric supramolecular porphyrins has been obtained by attaching four [Ru II(bipy2Cl] groups to the pyridyl substituents of meso-tetra(4-pyridylporphyrin and its metallated derivatives. These compounds display a rich electrochemistry and versatile catalytic, electrocatalytic and photochemical properties, associated with the ruthenium-bipyridine and the porphyrin complexes. These properties can be transferred to the electrodes by attaching thin molecular films of the compounds, by dip-coating, electrostatic assembly or electropolymerization. In this way, the interesting properties of those supermolecules and supramolecular assemblies can be used to prepare molecular devices and sensors.

  15. Infrared control coating of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  16. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  17. High power impulse magnetron sputtering of CIGS thin films for high efficiency thin film solar cells

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Kohout, Michal; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    2014-01-01

    Roč. 1, č. 3 (2014), s. 135-137 ISSN 2336-2626 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HiPIMS * emission spectroscopy * thin films * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics http://fyzika.feld.cvut.cz/misc/ppt/articles/2014/olejnicek.pdf

  18. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    matrix. The methodology can be used to produce free-standing films. Optical limiting capability of the nanoparticle-embedded polymer film is demonstrated. Keywords. Polar crystal; uniaxial orientational order; thin film; second harmonic gen- eration; silver nanoparticle; polyvinyl alcohol; free-standing film; optical limiter.

  19. Methods for producing thin film charge selective transport layers

    Science.gov (United States)

    Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

    2018-01-02

    Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

  20. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  1. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  2. Recent Progress in CuInS2 Thin-Film Solar Cell Research at NASA Glenn

    Science.gov (United States)

    Jin, M. H.-C.; Banger, K. K.; Kelly, C. V.; Scofield, J. H.; McNatt, J. S.; Dickman, J. E.; Hepp, A. F.

    2005-01-01

    The National Aeronautics and Space Administration (NASA) is interested in developing low-cost highly efficient solar cells on light-weight flexible substrates, which will ultimately lower the mass-specific power (W/kg) of the cell allowing extra payload for missions in space as well as cost reduction. In addition, thin film cells are anticipated to have greater resistance to radiation damage in space, prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing. The first major thin film solar cell was the "CdS solar cell" - a heterojunction between p-type CuxS and n-type CdS. The research on CdS cells started in the late 1950s and the efficiency in the laboratory was up to about 10 % in the 1980s. Today, three different thin film materials are leading the field. They include amorphous Si, CdTe, and Cu(In,Ga)Se2 (CIGS). The best thin film solar cell efficiency of 19.2 % was recently set by CIGS on glass. Typical module efficiencies, however, remain below 15 %.

  3. Glassy dynamics and heterogeneity of polymer thin films

    International Nuclear Information System (INIS)

    Kanaya, Toshiji; Inoue, Rintaro; Kawashima, Kazuko; Miyazaki, Tsukasa; Matsuba, Go; Nishida, Koji; Tsukushi, Itaru; Shibata, Kaoru; Hino, Masahiro

    2009-01-01

    We review our recent studies on glassy dynamics and glass transition of polymer thin films using neutron and X-ray reflectivity and inelastic neutron techniques. In the last decade extensive studies have been performed on polymer thin films to reveal very interesting but unusual properties such as reduction in the glass transition temperature T g with film thickness and negative thermal expansivity for thin films below about 25 nm, and often some contradictory experimental results have been reported. It is believed that a key to solve the controversial situation is to disclose heterogeneous structure or multi-layer structure in polymer thin films. In the review, therefore, we summarize our recent experimental results by neutron and X-ray reflectivity and inelastic neutron scattering, focusing on the dynamic heterogeneity in polymer thin films. (author)

  4. Ta-based amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    McGlone, John M., E-mail: mcglone@eecs.oregonstate.edu [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States); Olsen, Kristopher R. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Stickle, William F.; Abbott, James E.; Pugliese, Roberto A.; Long, Greg S. [Hewlett-Packard Company, Corvallis, OR, 97333 (United States); Keszler, Douglas A. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Wager, John F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States)

    2015-11-25

    With their lack of grains and grain boundaries, amorphous metals are known to possess advantageous mechanical properties and enhanced chemical stability relative to crystalline metals. Commonly, however, they exhibit poor high-temperature stability because of their metastable nature. Here, we describe two new Ta-based ternary metal thin films that retain thermal stability to 600 °C and above. The new thin-film compositions, Ta{sub 2}Ni{sub 2}Si{sub 1} and Ta{sub 2}Mo{sub 2}Si{sub 1}, are amorphous, exhibiting ultra-smooth surfaces (<0.4 nm) and resistivities typical of amorphous metals (224 and 177 μΩ cm, respectively). - Highlights: • New Ta-based amorphous metals were sputter deposited from individual targets. • As-deposited amorphous structure was confirmed through diffraction techniques. • Electrical and surface properties were characterized and possess smooth surfaces. • No evidence of crystallization up to 600 °C (TaNiSi) and 800 °C (TaMoSi). • Ultra-smooth surfaces remained unchanged up to crystallization temperature.

  5. Stable organic thin-film transistors

    Science.gov (United States)

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  6. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution in the infr......Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... characterized. Spectral responses are measured and in two types of measured GaAs solar cells (with Au and Ag nanoparticles) there was no clear efficiency enhancement in the NIR spectral range. In the case of Au nanoparticles it could be explained in similar way to the absorption data: the effect being broad...... cells spectral response to longer wavelengths, through possibly cheap and simple technologies: EBL can be substituted by colloidal solutions implementation and electroless plating is not expensive and results to be effective within a broad set of parameters (size, shape, density). Another application...

  7. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  8. The role of microstructural phenomena in magnetic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Laughlin, D.E.; Lambeth, D.N.

    1992-12-31

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  9. The role of microstructural phenomena in magnetic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Laughlin, D.E.; Lambeth, D.N.

    1992-01-01

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  10. Magnetism of FePt Thin Films

    Science.gov (United States)

    Alqhtany, Norah H.

    Materials with large magnetic anisotropy have received significant attention from the scientific community due to its advantages in technological applications. Equiatomic FePt has been identified as such a material which could possibly be a potential candidate for ultra- high density magnetic recording and other applications like permanent magnets. FePt thin films exhibit ordered L10 texture with high magnetocrystalline anisotropy and high saturation magnetization which seem lucrative for technological applications. This thesis presents an investigation of structural and magnetic properties of granular and epitaxial FePt films with L10 phase prepared by DC sputtering on different substrates (SrTiO3 and glass). X-ray Diffraction (XRD), Atomic Force Microscopy/Magnetic Force Microscopy (AFM/MFM) and Vibrating Sample Magnetometer (VSM) were employed in characterization process. The measurements obtained from these equipment were significant in establishing the relationship between the microstructure and the magnetic properties of these films. The symmetry and magnitude of magnetic anisotropy has also been analyzed and discussed in detail.

  11. Pressureless Bonding Using Sputtered Ag Thin Films

    Science.gov (United States)

    Oh, Chulmin; Nagao, Shijo; Suganuma, Katsuaki

    2014-12-01

    To improve the performance and reliability of power electronic devices, particularly those built around next-generation wide-bandgap semiconductors such as SiC and GaN, the bonding method used for packaging must change from soldering to solderless technology. Because traditional solders are problematic in the harsh operating conditions expected for emerging high-temperature power devices, we propose a new bonding method in this paper, namely a pressureless, low-temperature bonding process in air, using abnormal grain growth on sputtered Ag thin films to realize extremely high temperature resistance. To investigate the mechanisms of this bonding process, we characterized the microstructural changes in the Ag films over various bonding temperatures and times. We measured the bonding properties of the specimens by a die-shear strength test, as well as by x-ray diffraction measurements of the residual stress in the Ag films to show how the microstructural developments were essential to the bonding technology. Sound bonds with high die strength can be achieved only with abnormal grain growth at optimum bonding temperature and time. Pressureless bonding allows for production of reliable high-temperature power devices for a wide variety of industrial, energy, and environmental applications.

  12. Surface microtopography of thin silver films

    Science.gov (United States)

    Costa, Manuel F. M.; Almeida, Jose B.

    1991-01-01

    The authors present ne applications for the recently developed nori-contact optical inicrotopographer emphasizing the results of topographic inspections of thin silver films edges. These films were produced by sputtering of silver through different masks, using a planar magnetron source. The results show the influence ot the thickness and position of the masks on the topography of the film near its edge. Topographic information is obtained from the horizontal shift incurred by the bright spot on an horizontal surface, which is displaced vertically, when this is illuminated by an oblique collimated laser beam. The laser beam is focused onto the surface into a diffraction limited spot and is made to sweep the surface to be examined.. The horizontal position of the bright spot is continuously imaged onto a light detector array and the information about individual detectors that are activated is used to compute the corresponding horizontal shift on the reference plane. Simple trignometric calculations are used to relate the horizontal shift to the distance between the surface and a reference plane at each sampling point and thus a map of the surface topography can be built.

  13. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1997-03-01

    techniques have paved the way for obtaining epitaxial Hg1-xCdxTe thin films at substrate temperatures of ~180 °C with the desired crystalline perfection, stoichiometry, and doping without the necessity of further annealing for improving either the crystalline quality or dopant activity. Retaining larger mercury proportions during annealing would require heated enclosures as in isothermal VPE, hot-wall technique, vacuum evaporation, hot-wall MOCVD, or close-space sublimation. Pb1-xCdxTe thin films can be prepared by magnetron sputtering from cooled Pb1-xCdxTe targets on heated substrates. Hot-wall technique is suitable for the deposition of Pb1-xCdxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe TPV cells will benefit from the substantial work on CdTe thin film solar cells. The paper reviews work on thin films of ternary and pseudoternary compounds of interest for TPV conversion and methods of their preparation with a view to choosing the appropriate materials and fabrication techniques for polycrystalline-thin-film TPV cells.

  14. Thinning and rupture of a thin liquid film on a heated surface

    Energy Technology Data Exchange (ETDEWEB)

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  15. Factors affecting surface and release properties of thin PDMS films

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Junker, Michael Daniel; Skov, Anne Ladegaard

    2013-01-01

    Polydimethysiloxane (PDMS) elastomers are commonly used as dielectric electroactive polymers (DEAP). DEAP films are used in making actuators, generators and sensors. In the large scale manufacture of DEAP films, release of films from the substrate (carrier web) induces some defects and pre......-strain in the films which affect the overall performance of the films. The current research is directed towards investigating factors affecting the peel force and release of thin, corrugated polydimethylsiloxane films used in DEAP films. It has been shown that doping the PDMS films with small quantities...

  16. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  17. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  18. Local excitation and local collection of photocurrent in thin-film polycrystalline photovoltaic devices

    Science.gov (United States)

    Zhitenev, Nikolai; Yoon, Heayoung; Leite, Marina; Lee, Youngmin; Ko, Sarah; Zhao, Yue; Gianfrancesco, Anthony; Haney, Paul; Talin, Alec

    2013-03-01

    The power conversion efficiency of commercial solar modules based on thin-film chalcogenide materials is well below the theoretical limits. To understand the underlying physical mechanisms limiting the efficiency, we investigate local photovoltaic properties isolating the difference between the grain bulk (0.5-2 mkm in size) and the grain boundary in CdTe absorber. Local current-voltage measurements are performed using nano-contacts in conjunction with local electron-hole pairs generation comparing multiple injection techniques. First, the carriers are excited using variable energy electron beam enabling measurements with a spatial resolution down to 20 nm. Second, we have developed a novel approach for high-resolution and high-throughput photocurrent imaging downconverting electron beam into a near-field optical source using a thin film (<50 nm) of phosphors. The electron beam is fully absorbed in the phosphors layer, and the cathodoluminescence is used as a local photon source. Third, we generate carriers using a near-filed optical microscope varying the excitation wavelength. The results show that, in a well-optimized material, a large fraction of grain boundaries displays higher photocurrent as compared to grain bulk effectively serving as a three-dimensional distributed photocurrent collector.

  19. Estimating the Effects of Module Area on Thin-Film Photovoltaic System Costs: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fu, Ran [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Silverman, Timothy J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Woodhouse, Michael A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sun, Xingshu [Purdue University; Alam, Muhammad A [Purdue University

    2018-03-29

    We investigate the potential effects of module area on the cost and performance of photovoltaic systems. Applying a bottom-up methodology, we analyzed the costs associated with thin-film modules and systems as a function of module area. We calculate a potential for savings of up to 0.10 dollars/W and 0.13 dollars/W in module manufacturing costs for CdTe and CIGS respectively, with large area modules. We also find that an additional 0.04 dollars/W savings in balance-of-systems costs may be achieved. Sensitivity of the dollar/W cost savings to module efficiency, manufacturing yield, and other parameters is presented. Lifetime energy yield must also be maintained to realize reductions in the levelized cost of energy; the effects of module size on energy yield for monolithic thin-film modules are not yet well understood. Finally, we discuss possible non-cost barriers to adoption of large area modules.

  20. Magnetic thin films for high-density recording

    NARCIS (Netherlands)

    Lodder, J.C.

    1996-01-01

    Magnetic and magneto-optic recording technologies are continuing to evolve at a rapid pace resulting in longer playing times and more data being stored in ever decreasing volumes. Thin-film media are playing an important role in this process. Three different type of thin-film media are discussed

  1. Bonding of a niobium wire to a niobium thin film

    NARCIS (Netherlands)

    Jaszczuk, W.; Jaszczuk, W.; ter Brake, Hermanus J.M.; Flokstra, Jakob; Veldhuis, Dick; Stammis, R.; Rogalla, Horst

    1991-01-01

    A method for bonding a niobium wire to a niobium thin film is described. The bonds are to be used as superconducting connections between wire-wound gradiometers and thin-film coupling coils on DC SQUIDS. The method is characterized by two steps. Firstly, the hardness of the niobium wire is reduced

  2. Thin films of metal-organic compounds and metal nanoparticle

    Indian Academy of Sciences (India)

    Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications. S Philip Anthony Shatabdi Porel D ... Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which ...

  3. Ferroelectricity in Sodium Nitrite Thin Films | Britwum | Journal of the ...

    African Journals Online (AJOL)

    Investigations have been conducted on the ferroelectric property of thin films of NaNO2. The thin films were prepared with the dip coating technique. The phase transition was investigated by observing the change in the dielectric constant with temperature change. The presence of ferro-electricity was investigated with a ...

  4. Electrical properties of epitaxially grown VOx thin films

    NARCIS (Netherlands)

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  5. Stoichiometry control in oxide thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, R.

    2017-01-01

    A general challenge in the synthesis of complex oxide nanostructures and thin films is the control of the stoichiometry and herewith control of thin film properties. Pulsed Laser Deposition (PLD) is widely known for its potential for growing near stoichiometric highly crystalline complex metal oxide

  6. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid

  7. Cadmium sulphide thin film for application in gamma radiation ...

    African Journals Online (AJOL)

    Cadmium Sulphide (CdS) thin film was prepared using pyrolytic spraying technique and then irradiated at varied gamma dosage. The CdS thin film absorption before gamma irradiation was 0.6497. Absorbed doses were computed using standard equation established for an integrating dosimeter. The plot of absorbed dose ...

  8. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which form perfectly polar assemblies in their crystalline state are found to organize as uniaxially oriented crystallites in vapor deposited thin films on glass substrate.

  9. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    Transparent metal oxide thin films of samarium oxide (Sm 2 O 3 ) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure.

  10. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Science.gov (United States)

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  11. Thermal properties and stabilities of polymer thin films

    International Nuclear Information System (INIS)

    Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa

    2009-01-01

    Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)

  12. Dip-coated hydrotungstite thin films as humidity sensors

    Indian Academy of Sciences (India)

    Unknown

    Dip-coated hydrotungstite thin films as humidity sensors. G V KUNTE, UJWALA AIL, S A SHIVASHANKAR and A M UMARJI*. Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India. MS received 6 December 2004; revised 28 February 2005. Abstract. Thin films of a hydrated phase of tungsten ...

  13. Thermal stability of gold-PS nanocomposites thin films

    Indian Academy of Sciences (India)

    Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...

  14. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

  15. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    Science.gov (United States)

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  16. Thermally stable antireflective coatings based on nanoporous organosilicate thin films.

    Science.gov (United States)

    Kim, Suhan; Cho, Jinhan; Char, Kookheon

    2007-06-05

    Thermally stable nanoporous organosilicate thin films were realized by the microphase separation of pore-generating polymers mixed with an organosilicate matrix to be antireflective coatings (ARCs), for which a thin film with a refractive index (n) of 1.23 for zero reflection is required. The refractive index of such nanoporous organosilicate films can be tuned from 1.39 down to 1.23 by incorporating nanopores within the films. With a nanoporous single layer with n approximately 1.23, the light transmittance of the glass above 99.8% was achieved in the visible range (lambda approximately 550 nm). To overcome the limitation on the narrow wavelength for high transmittance imposed by a single antireflective nanoporous thin film, bilayer thin films with different refractive indices were prepared by placing a high refractive index layer with a refractive index of 1.45 below the nanoporous thin film. UV-vis transmittance of a glass coated with the bilayer films was compared with nanoporous single-layer films and it is demonstrated that the novel broadband antireflection coatings in a wide range of visible wavelength can be easily obtained by the organosilicate bilayer thin films described in this study. Also, ARCs developed in this study demonstrate excellent AR durability owing to the hydrophobic nature of the organosilicate matrix.

  17. Modifying thin film diamond for electronic applications

    International Nuclear Information System (INIS)

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  18. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  19. Thin Films of Quasicrystals: Optical, Electronic, and Mechanical Properties

    Science.gov (United States)

    Symko, Orest G.

    1998-03-01

    In order to extend some of the unusual properties of quasicrystals toward practical applications and to study fundamental aspects of these properties, we have developed a technology for the deposition of high quality thin films of quasicrystals on a variety of substrates. Mechanical support for the thin films is provided by the substrate as bulk quasicrystals are brittle. We have applied the thin films to studies of their optical, electrical, and mechanical properties as well as to coatings of biomedical devices. An important characteristic of a quasicrystal is its pseudogap in the electronic density of states; it is determined directly from optical transmission measurements. Optical and mechanical characteristics of the thin films provide strong support for the cluster nature of quasicrystals and emphasize their importance for coatings. When used in biomedical devices, thin film quasicrystalline coatings show remarkable strength, low friction, and non-stick behavior. This work was in collaboration with W. Park, E. Abdel-Rahman, and T. Klein.

  20. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  1. Thermoluminescence of thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Escobar A, L.; Camps, E.; Arrieta, A.; Romero, S.; Gonzalez, P.R.; Olea M, O.; Diaz E, R.

    2003-01-01

    Materials in thin film form have received great attention in the last few years mainly because of their singular properties, which may differ significantly from their bulk attributes making them attractive for a wide variety of applications. In particular, thermoluminescence (Tl) properties of thin films have been studied recently owing to their potential applications in detection for both ionizing and non ionizing radiation. The aim of the present work is to report the synthesis and characterization of C Nx, aluminum oxide and titanium oxide thin films. Thermoluminescence response of the obtained thin films was studied after subject thin films to UV radiation (254 nm) as well as to gamma radiation (Co-60). Thermoluminescence glow curves exhibited a peak centered at 150 C for CN x whereas for titanium oxide the glow curve shows a maximum peaking at 171 C. Characterization of the physical properties of the deposited materials is presented. (Author)

  2. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  3. Thin films and coatings toughening and toughness characterization

    CERN Document Server

    Zhang, Sam

    2015-01-01

    Thin Films and Coatings: Toughening and Toughness Characterization captures the latest developments in the toughening of hard coatings and in the measurement of the toughness of thin films and coatings. Featuring chapters contributed by experts from Australia, China, Czech Republic, Poland, Singapore, Spain, and the United Kingdom, this first-of-its-kind book:Presents the current status of hard-yet-tough ceramic coatingsReviews various toughness evaluation methods for films and hard coatingsExplores the toughness and toughening mechanisms of porous thin films and laser-treated surfacesExamines

  4. Room temperature deposition of magnetite thin films on organic substrate

    International Nuclear Information System (INIS)

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  5. CuTe Nanoparticles/Carbon Nanotubes as Back Contact for CdTe Solar Cells

    Science.gov (United States)

    Li, Chunxiu; Xu, Hang; Li, Kang; Ma, Xiao; Wu, Lili; Wang, Wenwu; Zhang, Jingquan; Li, Wei; Li, Bing; Feng, Lianghuan

    2018-02-01

    The Schottky barrier between the CdTe layer and metal electrode has opposite polarity to the CdS/CdTe cell junction, which can greatly degrade cell performance. Adding a back contact (BC) layer can reduce the Schottky barrier at metal/ p-CdTe interfaces. Paste including CuTe nanoparticles and carbon nanotubes (CuTe NPs/CNTs) was used as a BC in thin-film CdTe solar cells. The effect of the mass of carbon nanotubes (CNTs) in the paste and the BC annealing temperature on cell performance was explored. Cu film and paste including Cu nanoparticles and carbon nanotubes (Cu NPs/CNTs) were fabricated as the BC for CdTe solar cells. The performance of CdTe solar cells based on different kinds of Cu-containing BCs studied. The fill factor and open-circuit voltage ( V OC) of devices with CuTe NPs/CNTs BC were greatly improved by optimizing the mass of CNTs in the paste and the annealing temperature. The carrier concentration in the CdTe layer was improved by one order of magnitude. The CuTe NPs/CNTs BC showed the best effect on cell efficiency for the Cu-containing BC.

  6. Novel photon management for thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  7. Patterns and conformations in molecularly thin films

    Science.gov (United States)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  8. Preparation and optical characterization of DNA-riboflavin thin films

    Science.gov (United States)

    Paulson, Bjorn; Shin, Inchul; Kong, Byungjoo; Sauer, Gregor; Dugasani, Sreekantha Reddy; Khazaeinezhad, Reza; Jung, Woohyun; Joo, Boram; Oh, Kyunghwan

    2016-09-01

    Thin films of DNA biopolymer thin film are fabricated by a drop casting process on glass and silicon substrates, as well as freestanding. The refractive index is measured by elliposmetry and in bulk DNA film the refractive index is shown to be increased in the 600 to 900 nm DNA transparency window by doping with riboflavin. Further analysis with FT-IR, Raman, and XRD are used to determine whether binding between riboflavin and DNA occurs.

  9. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  10. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  11. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  12. Printed Thin Film Transistors: Research from China.

    Science.gov (United States)

    Tong, Sichao; Sun, Jia; Yang, Junliang

    2018-03-01

    Thin film transistors (TFTs) have experienced tremendous development during the past decades and show great potential applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFTs components including semiconductors, dielectrics and electrodes, as well as fully-printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed as well.

  13. Superconducting fluctuations in molybdenum nitride thin films

    Science.gov (United States)

    Baskaran, R.; Thanikai Arasu, A. V.; Amaladass, E. P.; Vaidhyanathan, L. S.; Baisnab, D. K.

    2018-02-01

    MoN thin films have been deposited using reactive sputtering. The change in resistance near superconducting transition temperature at various magnetic fields has been analyzed based on superconducting fluctuations in the system. The Aslamazov and Larkin scaling theory has been utilized to analyze the conductance change. The results indicate that most of the measurements show two dimensional (2D) nature and exhibit scaling behavior at lower magnetic fields (7T). We have also analyzed our data based on the model in which there is no explicit dependence of Tc. These analyses also substantiate a crossover from a 2D nature to a 3D at larger fields. Analysis using lowest Landau level scaling theory for a 2D system exhibit scaling behavior and substantiate our observations. The broadening at low resistance part has been explained based on thermally activated flux flow model and show universal behavior. The dependence of Uo on magnetic field indicates both single and collective vortex behavior.

  14. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    Chemical Properties ZnO occurs  as white powder  known  as  zinc white or  as  the mineral  zincite.  Zinc  oxide   is  an  amphoteric   oxide .  It  is...AFRL-OSR-VA-TR-2015-0044 Review of Zinc Oxide Thin Films Tom Otiti COLLEGE OF COMPUTING AND INFORMATION SCIENCE MAKERERE U Final Report 12/23/2014...COVERED (From - To)      01-07-2011 to 30-06-2014 4.  TITLE AND SUBTITLE ZINC OXIDE MATERIALS FOR PHOTOVOLTAIC APPLICATIONS 5a.  CONTRACT NUMBER 5b

  15. Amperometric noise at thin film band electrodes.

    Science.gov (United States)

    Larsen, Simon T; Heien, Michael L; Taboryski, Rafael

    2012-09-18

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive polymers and measured the current noise in physiological buffer solution for a wide range of different electrode areas. The noise measurements could be modeled by an analytical expression, representing the electrochemical cell as a resistor and capacitor in series. The studies revealed three domains; for electrodes with low capacitance, the amplifier noise dominated, for electrodes with large capacitances, the noise from the resistance of the electrochemical cell was dominant, while in the intermediate region, the current noise scaled with electrode capacitance. The experimental results and the model presented here can be used for choosing an electrode material and dimensions and when designing chip-based devices for low-noise current measurements.

  16. Optical properties of aluminum oxide thin films and colloidal nanostructures

    International Nuclear Information System (INIS)

    Koushki, E.; Mousavi, S.H.; Jafari Mohammadi, S.A.; Majles Ara, M.H.; Oliveira, P.W. de

    2015-01-01

    In this work, we prepared thin films of aluminum oxide (Al 2 O 3 ) with different thicknesses, using a wet chemical process. The Al 2 O 3 nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  17. Optical properties of aluminum oxide thin films and colloidal nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Koushki, E., E-mail: ehsan.koushki@yahoo.com [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Physics Department, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Mousavi, S.H. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Jafari Mohammadi, S.A. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Department of Chemistry, College of Science, Islamshahr Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Majles Ara, M.H. [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Oliveira, P.W. de [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany)

    2015-10-01

    In this work, we prepared thin films of aluminum oxide (Al{sub 2}O{sub 3}) with different thicknesses, using a wet chemical process. The Al{sub 2}O{sub 3} nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  18. Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

    2017-08-01

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

  19. Glass transition and thermal expansivity of polystyrene thin films

    International Nuclear Information System (INIS)

    Inoue, R.; Kanaya, T.; Miyazaki, T.; Nishida, K.; Tsukushi, I.; Shibata, K.

    2006-01-01

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T g and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements

  20. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  1. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  2. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S. [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  3. Dip-coated hydrotungstite thin films as humidity sensors

    Indian Academy of Sciences (India)

    Thin films of a hydrated phase of tungsten oxide, viz. hydrotungstite, have been prepared on glass substrates by dip-coating method using ammonium tungstate precursor solution. X-ray diffraction shows the films to have a strong -axis orientation. The resistance of the films is observed to be sensitive to the humidity content ...

  4. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  5. Strain-induced properties of epitaxial VOx thin films

    NARCIS (Netherlands)

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  6. Thin-film cryogenic resistors from aluminium alloys

    Science.gov (United States)

    Tadros, N. N.; Holdeman, L. B.

    The temperature dependence of the resistances of thin films sputtered from three commercially available aluminium alloys (5052, 5086, 5456) has been measured in the temperature range 1.5-4.2 K. The 5052-alloy films had a positive temperature coefficient of resistance (TCR) throughout this temperature range, whereas films of the other two alloys had a negative TCR.

  7. OPTIMISATION OF SPRAY DEPOSITED Sno2 THIN FILM FOR ...

    African Journals Online (AJOL)

    Dr Obe

    1987-09-01

    Sep 1, 1987 ... ABSTRACT. The use of conducting tin-oxide (SnO2 ) films for fabrication of solar cell is becoming increasingly important because of reasonably high efficiency and ease in fabrication. The role of the thin-oxide film is very critical for high efficiency. Resistivity, thickness and transmittance of the film should be ...

  8. Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

    Science.gov (United States)

    Beringer, Douglas B.

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

  9. Photoinduced conductivity in tin dioxide thin films

    International Nuclear Information System (INIS)

    Muraoka, Y.; Takubo, N.; Hiroi, Z.

    2009-01-01

    The effects of ultraviolet light irradiation on the conducting properties of SnO 2-x thin films grown epitaxially on TiO 2 or Al 2 O 3 single-crystal substrates are studied at room temperature. A large increase in conductivity by two to four orders of magnitude is observed with light irradiation in an inert atmosphere and remains after the light is removed. The high-conducting state reverts to the original low-conducting state by exposing it to oxygen gas. These reversible phenomena are ascribed to the desorption and adsorption of negatively charged oxygen species at the grain boundaries, which critically change the mobility of electron carriers already present inside grains by changing the potential barrier height at the grain boundary. The UV light irradiation provides us with an easy and useful route to achieve a high-conducting state even at low carrier density in transparent conducting oxides and also to draw an invisible conducting wire or a specific pattern on an insulating film.

  10. Electrodeposition of thin Pd-Ag films

    International Nuclear Information System (INIS)

    Hasler, P.; Allmendinger, T.

    1993-01-01

    Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

  11. Polymer Based Thin Film Screen Preparation Technique

    Science.gov (United States)

    Valais, I.; Michail, C.; Fountzoula, C.; Fountos, G.; Saatsakis, G.; Karabotsos, A.; Panayiotakis, G. S.; Kandarakis, I.

    2017-11-01

    Phosphor screens, mainly prepared by electrophoresis, demonstrate brightness equal to the standard sedimentation on glass or quartz substrate process and are capable of very high resolution. Nevertheless, they are very fragile, the shape of the screen is limited to the substrate shape and in order to achieve adequate surface density for application in medical imaging, a significant quantity of the phosphor will be lost. Fluorescent films prepared by the dispersion of phosphor particles into a polymer matrix could solve the above disadvantages. The aim of this study is to enhance the stability of phosphor screens via the incorporation of phosphor particles into a PMMA (PolyMethyl MethAcrylate) matrix. PMMA is widely used as a plastic optical fiber, it shows almost nearly no dispersion effects and it is transparent in the whole visible spectral range. Different concentrations of PMMA in MMA (Methyl Methacrylate) were examined and a 37.5 % w/w solution was used for the preparation of the thin polymer film, since optical quality characteristics were found to depend on PMMA in MMA concentration. Scanning Electron Microscopy (SEM) images of the polymer screens demonstrated high packing density and uniform distribution of the phosphor particles. This method could be potentially used for phosphor screen preparation of any size and shape.

  12. Electroluminescence of doped organic thin films

    Science.gov (United States)

    Tang, C. W.; VanSlyke, S. A.; Chen, C. H.

    1989-05-01

    Electroluminescent (EL) devices are constructed using multilayer organic thin films. The basic structure consists of a hole-transport layer and a luminescent layer. The hole-transport layer is an amorphous diamine film in which the only mobile carrier is the hole. The luminescent layer consists of a host material, 8-hydroxyquinoline aluminum (Alq), which predominantly transports electrons. High radiance has been achieved at an operating voltage of less than 10 V. By doping the Alq layer with highly fluorescent molecules, the EL efficiency has been improved by about a factor of 2 in comparison with the undoped cell. Representative dopants are coumarins and DCMs. The EL quantum efficiency of the doped system is about 2.5%, photon/electron. The EL colors can be readily tuned from the blue-green to orange-red by a suitable choice of dopants as well as by changing the concentration of the dopant. In the doped system the electron-hole recombination and emission zones can be confined to about 50 Å near the hole-transport interface. In the undoped Alq, the EL emission zone is considerably larger due to exciton diffusion. The multilayer doped EL structure offers a simple means for the direct determination of exciton diffusion length.

  13. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  14. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    Directory of Open Access Journals (Sweden)

    Hao Xue

    2016-07-01

    Full Text Available Solution-processed CdTe nanocrystals (NCs photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values comparable to those of commercial thin film CdTe/CdS solar cells fabricated by the close-space sublimation (CSS method. Here we review the progress and prospects in this field, focusing on new insights into CdTe NCs synthesized, device fabrication, NC solar cell operation, and how these findings give guidance on optimizing solar cell performance.

  15. Electron field emission from amorphous semiconductor thin films

    International Nuclear Information System (INIS)

    Forrest, R.D.

    2001-01-01

    The flat panel display market requires new and improved technologies in order to keep up with the requirements of modem lifestyles. Electron field emission from thin film amorphous semiconductors is potentially such a technology. For this technology to become viable, improvements in the field emitting properties of these materials must be achieved. To this end, it is important that a better understanding of the emission mechanisms responsible is attained. Amorphous carbon thin films, amorphous silicon thin films and other materials have been deposited, in-house and externally. These materials have been characterised using ellipsometry, profilometry, optical absorption, scanning electron microscopy, atomic force microscopy, electron paramagnetic resonance and Rutherford backscattering spectroscopy. An experimental system for evaluating the electron field emitting performance of thin films has been developed. In the process of developing thin film cathodes in this study, it has been possible to add a new and potentially more useful semiconductor, namely amorphous silicon, to the family of cold cathode emitters. Extensive experimental field emission data from amorphous carbon thin films, amorphous silicon thin films and other materials has been gathered. This data has been used to determine the mechanisms responsible for the observed electron emission. Preliminary computer simulations using appropriate values for the different material properties have exhibited emission mechanisms similar to those identified by experiment. (author)

  16. Plasma polymerised thin films for flexible electronic applications

    International Nuclear Information System (INIS)

    Jacob, Mohan V.; Olsen, Natalie S.; Anderson, Liam J.; Bazaka, Kateryna; Shanks, Robert A.

    2013-01-01

    The significant advancement and growth of organic and flexible electronic applications demand materials with enhanced properties. This paper reports the fabrication of a nonsynthetic polymer thin film using radio frequency plasma polymerisation of 3,7-dimethyl-1,6-octadien-3-ol. The fabricated optically transparent thin film exhibited refractive index of approximately 1.55 at 500 nm and rate of deposition was estimated to be 40 nm/min. The surface morphology and chemical properties of the thin films were also reported in this paper. The optical band gap of the material is around 2.8 eV. The force of adhesion and Young's modulus of the linalool polymer thin films were measured using force-displacement curves obtained from a scanning probe microscope. The friction coefficient of linalool polymer thin films was measured using the nanoscratch test. The calculated Young's modulus increased linearly with increase in input power while the friction coefficient decreased. - Highlights: • Fabrication of a novel polymer thin film from non-synthetic source • The surface, optical and chemical properties are reported. • The fabricated thin film is transparent and smooth. • An environmentally friendly material • Candidate for flexible electronics as dielectric layer or as an encapsulation layer

  17. Plasma polymerised thin films for flexible electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, Mohan V., E-mail: mohan.jacob@jcu.edu.au [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Olsen, Natalie S.; Anderson, Liam J.; Bazaka, Kateryna [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Shanks, Robert A. [Applied Sciences, RMIT University, GPO Box 2476V, Melbourne 3001 (Australia)

    2013-11-01

    The significant advancement and growth of organic and flexible electronic applications demand materials with enhanced properties. This paper reports the fabrication of a nonsynthetic polymer thin film using radio frequency plasma polymerisation of 3,7-dimethyl-1,6-octadien-3-ol. The fabricated optically transparent thin film exhibited refractive index of approximately 1.55 at 500 nm and rate of deposition was estimated to be 40 nm/min. The surface morphology and chemical properties of the thin films were also reported in this paper. The optical band gap of the material is around 2.8 eV. The force of adhesion and Young's modulus of the linalool polymer thin films were measured using force-displacement curves obtained from a scanning probe microscope. The friction coefficient of linalool polymer thin films was measured using the nanoscratch test. The calculated Young's modulus increased linearly with increase in input power while the friction coefficient decreased. - Highlights: • Fabrication of a novel polymer thin film from non-synthetic source • The surface, optical and chemical properties are reported. • The fabricated thin film is transparent and smooth. • An environmentally friendly material • Candidate for flexible electronics as dielectric layer or as an encapsulation layer.

  18. Thin Film Evaporation of Receding Meniscus within Micro Pillar Arrays

    Science.gov (United States)

    Alhosani, Mohamed H.; Alsheghri, Ammar A.; Alghaferi, Amal; Zhang, Tiejun

    2015-03-01

    Evaporation is a key process in power generation, water desalination, and thermal management applications. It has been proved that hydrophilic micro structured surfaces can enhance the convection heat transfer by promoting high-performance thin film evaporation and enlarging the total heat transfer surface area. When depositing a water droplet on hydrophilic structured surfaces, two distinct regions can be observed, a) central region with water level higher than the micro pillar height (droplet region), b) thin film region as a result of liquid meniscus receding among micro structures. In this study, we are able to probe the physics of thin film evaporation of receding liquid meniscus among micro pillar arrays with different pillar heights, spacings and diameters. Heat transfer is systematically studied in the droplet and thin film region for each sample. Also, Young-Laplace equation and kinetic theory of mass transport are used to model the thin film evaporation around micro pillars. With the proposed model, the shape of meniscus around micro pillars and the diameter of droplet/extended thin film region can be predicted and compared with the experimental measurement. The model can also be extended to model thin film evaporation of meniscus within nano structured surfaces. Supported by cooperative agreement between Masdar Inst and MIT.

  19. Resistivity of thiol-modified gold thin films

    International Nuclear Information System (INIS)

    Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

    2014-01-01

    In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography

  20. Development of Flexible Electrochromic Device with Thin-Film Configuration

    Science.gov (United States)

    Yoshimura, Hideo; Sakaguchi, Tomonori; Koshida, Nobuyoshi

    2007-04-01

    As we reported previously, the carrier accumulation mechanism is very useful for obtaining a quick-response electrochromic (EC) device with the inorganic-thin-film configuration. To confirm the availability of this concept for flexible substrates, the EC device has been fabricated on a polymeric film. The device is composed of a top semitransparent electrode, an electrolytic thin Ta2O5 film, a very thin SiO2 film, a thin amorphous WO3 film, and an indium-tin-oxide-coated poly(ethylene terephthalate) (PET) film. The experimental results show that the insertion of thin SiO2 film significantly accelerates the EC coloration as in the case of glass substrates. In accordance with cyclic voltammogram analyses, the enhanced EC kinetics is associated with an increased EC efficiency owing to the carrier accumulation effect of thin SiO2 film. The present result is potentially useful for development of flexible paper-like EC display devices and simple optical control systems.

  1. Multifunctional Parylene-C Microfibrous Thin Films

    Science.gov (United States)

    Chindam, Chandraprakash

    Towards sustainable development, multifunctional products have many advantageous over single-function products: reduction in number of parts, raw material, assembly time, and cost involved in a product's life cycle. My goal for this thesis was to demonstrate the multifunctionalities of Parylene-C microfibrous thin films. To achieve this goal, I chose Parylene C, a polymer, because the fabrication of periodic mediums of Parylene C in the form of microfibrous thin films (muFTFs) was already established. A muFTFs is a parallel arrangement of identical micrometer-sized fibers of shapes cylindrical, chevronic, or helical. Furthermore, Parylene C had three existing functions: in medical-device industries as corrosion-resistive coatings, in electronic industries as electrically insulating coatings, and in biomedical research for tissue-culture substrates. As the functionalities of a material are dependent on the microstructure and physical properties, the investigation made for this thesis was two-fold: (1) Experimentally, I determined the wetting, mechanical, and dielectric properties of columnar muFTFs and examined the microstructural and molecular differences between bulk films and muFTFs. (2) Using physical properties of bulk film, I computationally determined the elastodynamic and determined the electromagnetic filtering capabilities of Parylene-C muFTFs. Several columnar muFTFs of Parylene C were fabricated by varying the monomer deposition angle. Following are the significant experimental findings: 1. Molecular and microstructural characteristics: The dependence of the microfiber inclination angle on the monomer deposition angle was classified into four regimes of two different types. X-ray diffraction experiments indicated that the columnar muFTFs contain three crystal planes not evident in bulk Parylene-C films and that the columnar muFTFs are less crystalline than bulk films. Infrared absorbance spectra revealed that the atomic bonding is the same in all

  2. Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

    International Nuclear Information System (INIS)

    Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

  3. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  4. Nanoscale phenomena in ferroelectric thin films

    Science.gov (United States)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  5. Stability of tetraphenyl butadiene thin films in liquid xenon

    International Nuclear Information System (INIS)

    Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.

    2016-01-01

    Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.

  6. Buckling of Thin Films in Nano-Scale

    Directory of Open Access Journals (Sweden)

    Li L.A.

    2010-06-01

    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  7. Buckling of Thin Films in Nano-Scale

    Science.gov (United States)

    Wang, S.; Jia, H. K.; Sun, J.; Ren, X. N.; Li, L. A.

    2010-06-01

    Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  8. Principles of electron backscattering by solids and thin films

    International Nuclear Information System (INIS)

    Niedrig, H.

    1977-01-01

    The parameters concerning the electron backscattering from thin films and solids (atomic scattering cross-section, atomic number, single/multiple scattering, film thickness of self-supporting films and of surface films on bulk substrates, scattering angular distribution, angle of incidence, diffraction effects) are described. Their influence on some important contrast mechanisms in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, orientation contrast) is discussed. The main backscattering electron detection systems are briefly described. (orig.) [de

  9. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  10. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  11. Rapid protein immobilization for thin film continuous flow biocatalysis.

    Science.gov (United States)

    Britton, Joshua; Raston, Colin L; Weiss, Gregory A

    2016-08-09

    A versatile enzyme immobilization strategy for thin film continuous flow processing is reported. Here, non-covalent and glutaraldehyde bioconjugation are used to immobilize enzymes on the surfaces of borosilicate reactors. This approach requires only ng of protein per reactor tube, with the stock protein solution readily recycled to sequentially coat >10 reactors. Confining reagents to thin films during immobilization reduced the amount of protein, piranha-cleaning solution, and other reagents by ∼96%. Through this technique, there was no loss of catalytic activity over 10 h processing. The results reported here combines the benefits of thin film flow processing with the mild conditions of biocatalysis.

  12. Plasma polymerized hexamethyldisiloxane thin films for corrosion protection

    Science.gov (United States)

    Saloum, S.; Alkhaled, B.; Alsadat, W.; Kakhia, M.; Shaker, S. A.

    2018-01-01

    This study focused on the corrosion protection performance of plasma polymerized HMDSO thin films in two different corrosive medias, 0.3M NaCl and 0.3M H2SO4. The pp-HMDSO thin films were deposited on steel substrates for electrochemical tests using the potentiodynamic polarization technique, they were deposited also on aluminum and silicon substrates to investigate their resistance to corrosion, through the analysis of the degradation of microhardness and morphology, respectively, after immersion of the substrates for one week in the corrosive media. The results showed promising corrosion protection properties of the pp-HMDSO thin films.

  13. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  14. Organic nanostructured thin film devices and coatings for clean energy

    CERN Document Server

    Zhang, Sam

    2010-01-01

    Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films and coatings, while the third volume explores the cutting-edge organic nanostructured devices used to produce clean energy. This third volume, Organic Nanostructured Thin Film Devices and Coatings for Clean Energy, addresses various aspects of the proc

  15. Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Kephart, Jason M.; Kindvall, Anna; Williams, Desiree; Kuciauskas, Darius; Dippo, Pat; Munshi, Amit; Sampath, W. S.

    2018-03-01

    Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxide materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.

  16. Advanced Processing of CdTe- and CuInxGa1-xSe2-Based Solar Cells: Final Report: 18 April 1995 - 31 May 1998

    International Nuclear Information System (INIS)

    Jayapalan, A.; Tetali, B.; Ferekides, C.S.; Marinskiy, D.; Morel, D.L.; Lin, H.; Sankaranarayanan, H.; Bhatt, R.; Narayanaswamy, R.; Prabhakaran, R.; Marinskaya, S.; Zafar, S.

    1999-01-01

    This report summarizes work performed by the University of South Florida Department of Electrical Engineering under this subcontract. The Cadmium telluride(CdTe) portion of this project deals with the development of high-efficiency thin-filmed CdTe solar cells using fabrication techniques that are suitable for manufacturing environments

  17. Thin Films for X-ray Optics

    Science.gov (United States)

    Conley, Raymond

    Focusing x-rays with refraction requires an entire array of lens instead of a single element, each contributing a minute amount of focusing to the system. In contrast to their visible light counterparts, diffractive optics require a certain depth along the optical axis in order to provide sufficient phase shift. Mirrors reflect only at very shallow angles. In order to increase the angle of incidence, contribution from constructive interference within many layers needs to be collected. This requires a multilayer coating. Thin films have become a central ingredient for many x-ray optics due to the ease of which material composition and thickness can be controlled. Chapter 1 starts with a short introduction and survey of the field of x-ray optics. This begins with an explanation of reflective multilayers. Focusing optics are presented next, including mirrors, zone plates, refractive lenses, and multilayer Laue lens (MLL). The strengths and weaknesses of each "species" of optic are briefly discussed, alongside fabrication issues and the ultimate performance for each. Practical considerations on the use of thin-films for x-ray optics fabrication span a wide array of topics including material systems selection and instrumentation design. Sputter deposition is utilized exclusively for the work included herein because this method of thin-film deposition allows a wide array of deposition parameters to be controlled. This chapter also includes a short description of two deposition systems I have designed. Chapter 2 covers a small sampling of some of my work on reflective multilayers, and outlines two of the deposition systems I have designed and built at the Advanced Photon Source. A three-stripe double multilayer monochromator is presented as a case study in order to detail specifications, fabrication, and performance of this prolific breed of x-ray optics. The APS Rotary Deposition System was the first deposition system in the world designed specifically for multilayer

  18. The rapid prototyping of textured amorphous surfaces for the graphoepitaxial deposition of CdTe films using focused ion beam lithography

    Energy Technology Data Exchange (ETDEWEB)

    Neretina, S. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); Temple University, Department of Mechanical Engineering, Philadelphia, PA (United States); Hughes, R.A. [McMaster University, Brockhouse Institute for Materials Research, Hamilton, Ontario (Canada); Temple University, Department of Mechanical Engineering, Philadelphia, PA (United States); Stortz, G.; Mascher, P. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); Preston, J.S. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); McMaster University, Brockhouse Institute for Materials Research, Hamilton, Ontario (Canada)

    2011-02-15

    Cadmium telluride films deposited on amorphous substrates exhibit a grain structure characterized by [111]-oriented grains, but where the in-plane grain orientation is randomized due to the absence of epitaxy. Here, we explore the viability of promoting an in-plane grain alignment through graphoepitaxy. Fifteen different substrate surface textures were fabricated using focused ion beam lithography. This approach allows for the side-by-side deposition of surface textures where both the areal extent and depth of the surface features are varied in a systematic manner. CdTe films deposited overtop these textures show grain structures with dramatic variations, revealing that particular length scales have the most pronounced effect on the grain structure. (orig.)

  19. Survey of potential-induced degradation in thin-film modules

    Science.gov (United States)

    Hacke, Peter; Terwilliger, Kent; Glick, Stephen H.; Perrin, Greg; Kurtz, Sarah R.

    2015-09-01

    CdTe and CIGS type modules were tested for potential-­-induced degradation with positive and negative 1,000 V bias applied to the active cell circuit in an 85°C, 85% relative humidity environmental chamber. Both CdTe module types tested exhibited degradation under negative bias. I-­-V curve data indicated the first module type was affected sequentially by shunting followed by a recovery and then by series resistance losses; the second was affected by recombination losses. The first type showed transparent conductive oxide delamination from the glass after about 750 h of stress testing in the environmental chamber and exhibited power degradation within five weeks in field tests with -­-1,000 V system voltage. Performance of CIGS modules differed depending on the technology generation. Under negative bias, the older module design showed an initial 12% (relative) improvement, possibly because of the influx of sodium ions that has been reported to benefit the electrical properties, followed by severe degradation with continued stress testing. The newer design CIGS module exhibited the best stability of the four thin-­-film module types tested with a total loss of 9.5 % (relative) power drop after 3,100 h of test with negative voltage bias, but not clearly by system voltage stress effects considering similar behavior by a sister module in-­-chamber in open-­-circuit condition. Relative rates of current leakage-­-to-­-ground between chamber tests and modules placed outdoors under system voltage stress are compared to extrapolate anticipated coulombs transferred for given extents of degradation of the module power. This analysis correctly placed which module type failed in the field first, but overestimated the time to failure. The performance of modules at 85°C with dark current Imp applied through the cell circuit are discussed with respect to stand-­-alone fielded modules biased to near their maximum power point with load resistors.

  20. Tools to synthesize the learning of thin films

    International Nuclear Information System (INIS)

    Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.

  1. Radiation Effects in Interfaces and Thin Films

    Science.gov (United States)

    Mairov, Alexander

    One of the key approaches to developing materials with greater radiation damage resistance is to introduce a large fraction of internal interfaces. Interfaces act as sinks for recombination of radiation-induced defects and as sites for accumulation of helium bubbles, thereby diverting them away from grain boundaries, where they can induce embrittlement. The beneficial role of interfaces in mitigating radiation damage has been demonstrated in nanoscale multilayered structures and in nanograined materials. Another more common example is oxide dispersion strengthened (ODS) steels and nanostructured ferritic alloys (NFA) where a fine distribution of particles (clusters) of varying stoichiometries (e.g., Y2Ti2O7, Y2TiO 5, Y2O3, TiO2 and Y-Ti-O non-stoichiometric oxides) not only confer high creep strength, but also high radiation damage tolerance due to the large area of metal/oxide interfaces. However, the efficacy of these interfaces to act as defect sinks depends on their compositional and physical stability under radiation. With this background, this work focused on the stability of interfaces between Ti, TiO2, and Y2O 3 thin film deposited on Fe-12%Cr substrates after irradiation with 5MeV Ni+2 ions at various temperatures. TEM and STEM-EDS methods were used to understand the compositional changes at the interfaces. Additionally, accumulation of implanted helium at epitaxial and non-epitaxial Fe/Y 2O3 interfaces was also studied. Finally, the study was extended to study irradiation effects (up to 150 dpa) in novel Al2O 3 nanoceramic films with immediate potential applications as coatings for corrosion protection in the harsh high temperature environments of Gen IV reactors. This research is expected to have implications in the development of radiation damage tolerant nanostructured alloys for nuclear reactors while also expanding the scientific knowledge-base in the area of radiation stability of interfaces in solids and protective coatings.

  2. Electrochromic performances of nonstoichiometric NiO thin films

    International Nuclear Information System (INIS)

    Moulki, H.; Faure, C.; Mihelčič, M.; Vuk, A. Šurca; Švegl, F.; Orel, B.; Campet, G.; Alfredsson, M.; Chadwick, A.V.; Gianolio, D.; Rougier, A.

    2014-01-01

    Electrochromic (EC) performances of Ni 3+ containing NiO thin films, called modified NiO thin films, prepared either by pulsed laser deposition or by chemical route are reported. When cycled in lithium based electrolyte, the comparison of the EC behavior of nonstoichiometric NiO thin films points out a larger optical contrast for the films synthesized by chemical route with the absence of an activation period on early electrochemical cycling due in particular to a larger porosity. Herein we demonstrate faster kinetics for modified NiO thin films cycled in lithium ion free electrolyte. Finally, X-ray absorption spectroscopy is used for a preliminary understanding of the mechanism involved in this original EC behavior linked to the film characteristics including their disorder character, the presence of Ni 3+ and their porous morphology. - Highlights: • Nonstoichiometric NiO thin films • Electrochromic performances in lithium free electrolyte • X-ray absorption spectroscopy investigation of as-deposited films and upon cycling

  3. Degradation process in organic thin film devices fabricated using ...

    Indian Academy of Sciences (India)

    hexylthiophene); organic semiconductors; conducting polymers; degradation. ... The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have ...

  4. Modeling surface imperfections in thin films and nanostructured surfaces

    DEFF Research Database (Denmark)

    Hansen, Poul-Erik; Madsen, J. S.; Jensen, S. A.

    2017-01-01

    Accurate scatterometry and ellipsometry characterization of non-perfect thin films and nanostructured surfaces are challenging. Imperfections like surface roughness make the associated modelling and inverse problem solution difficult due to the lack of knowledge about the imperfection...

  5. Property elucidation of vacuum-evaporated zinc telluride thin film ...

    Indian Academy of Sciences (India)

    J U Ahamed

    2017-08-31

    ZnTe) thin film on glass substrate in order to investigate the ... photovoltaic solar cells, light-emitting diodes, laser diodes, microwave devices .... integrated intensity ratio of a super lattice peak to a fun- damental peak. Comparing ...

  6. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  7. Self-organized structures in soft confined thin films

    Indian Academy of Sciences (India)

    organized creation of mesostructures in soft materials like thin films of polymeric liquids and elas- tic solids. These very small scale, highly confined systems are inherently unstable and thus self-organize into ordered structures which can be ...

  8. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  9. Laser Induced Chemical Vapor Deposition of Thin Films

    National Research Council Canada - National Science Library

    Zahavi, Joseph

    1995-01-01

    .... It completes the information which was given in the previous two progress reports. Basically, the aim of the first year was to study the possibility of deposition of silicon nitride thin films from silane and ammonia at low temperatures...

  10. Thin carbon film serves as UV bandpass filter

    Science.gov (United States)

    1966-01-01

    Thin carbon film deposited on a 70 percent transparent screen provides a filter for narrow-band detectors in the extreme ultraviolet. The filter also suppresses scattered light and light of unwanted orders in vacuum spectrographs.

  11. Simple gun for vapor deposition of organic thin films

    International Nuclear Information System (INIS)

    Sato, N.; Seki, K.; Inokuchi, H.

    1987-01-01

    A simple evaporation gun for preparing organic thin films was fabricated using commercially available parts of an electron gun for a TV Braun tube. The device permits sample heating to be easily controlled because of the small heat capacity

  12. A thin film hydroponic system for plant studies

    Science.gov (United States)

    Hines, Robert; Prince, Ralph; Muller, Eldon; Schuerger, Andrew

    1990-01-01

    The Land Pavillion, EPCOT Center, houses a hydroponic, thin film growing system identical to that residing in NASA's Biomass Production Chamber at Kennedy Space Center. The system is targeted for plant disease and nutrition studies. The system is described.

  13. Thin films of xyloglucans for BSA adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Jo, T.A. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Petri, D.F.S. [Institute of Chemistry, University of Sao Paulo, Sao Paulo, SP (Brazil); Valenga, F. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Lucyszyn, N. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Sierakowski, M.-R. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil)], E-mail: mariarita.sierakowski@ufpr.br

    2009-03-01

    In this work, XG extracted from Tamarindus indica (XGT) and Copaifera langsdorffii (XGC) seeds were deposited onto Si wafers as thin films. The characteristics of XGT and XGC adsorbed layers were compared with a commercial XG sample (TKP, Tamarind kernel powder) by ellipsometry and atomic force microscopy (AFM). Moreover, the adsorption of oxidized derivative of XGT (To60) onto amino-terminated Si wafers and the immobilization of bovine serum albumin (BSA) onto polysaccharides covered wafers, as a function of pH, were also investigated. The XG samples presented molar ratios Glc:Xyl:Gal of 2.4:2.1:1 (XGC); 2.8: 2.3: 1 (XGT) and 1.9:1.9:1 (TKP). The structure of XGT and XGC was determined by O-methy alditol acetate derivatization and showed similar features, but XGC confirmed the presence of more {alpha}-D-Xyl branches due to more {beta}-D-Gal ends. XGT deposited onto Si adsorbed as fibers and small entities uniformly distributed, as evidenced by AFM, while TPK and XGC formed larger aggregates. The thickness of To60 onto amino-terminated surface was similar to that determined for XGT onto Si wafers. A maximum in the adsorbed amount of BSA occurred close to its isoelectric point (5.5). These findings indicate that XGT and To60 are potential materials for the development of biomaterials and biotechnological devices.

  14. Degradation analysis of thin film photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C., E-mail: chantelle.radue@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P{sub MAX}) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 approx30% and a total degradation of approx42%. For Si-2 the initial P{sub MAX} was 7.93 W, with initial light-induced degradation of approx10% and a total degradation of approx17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  15. Degradation analysis of thin film photovoltaic modules

    International Nuclear Information System (INIS)

    Radue, C.; Dyk, E.E. van

    2009-01-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P MAX ) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 ∼30% and a total degradation of ∼42%. For Si-2 the initial P MAX was 7.93 W, with initial light-induced degradation of ∼10% and a total degradation of ∼17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  16. Thin wetting film lens-less imaging

    International Nuclear Information System (INIS)

    Allier, C.P.; Poher, V.; Coutard, J.G.; Hiernard, G.; Dinten, J.M.

    2011-01-01

    Lens-less imaging has recently attracted a lot of attention as a compact, easy-to-use method to image or detect biological objects like cells, but failed at detecting micron size objects like bacteria that often do not scatter enough light. In order to detect single bacterium, we have developed a method based on a thin wetting film that produces a micro-lens effect. Compared with previously reported results, a large improvement in signal to noise ratio is obtained due to the presence of a micro-lens on top of each bacterium. In these conditions, standard CMOS sensors are able to detect single bacterium, e.g. E. coli, Bacillus subtilis and Bacillus thuringiensis, with a large signal to noise ratio. This paper presents our sensor optimization to enhance the SNR; improve the detection of sub-micron objects; and increase the imaging FOV, from 4.3 mm 2 to 12 mm 2 to 24 mm 2 , which allows the detection of bacteria contained in 0.5 μl to 4 μl to 10 μl, respectively. (authors)

  17. Trends and new applications in thin films

    International Nuclear Information System (INIS)

    1996-01-01

    The proceedings of this symposium comprise 95 communications from which 64 were selected and fall into the scope of INIS subject categories, and 1 was selected for ETDE indexing. The selected communications deal with the techniques used for thin films preparation using chemical or physical vapor deposition techniques (plasma-arc or jet spraying, cathode sputtering, reactive DC or RF magnetron sputtering, plasma-ion deposition, ion implantation, electron or ion beam spraying, ion beam assisted plasma etching, dynamic ion mixing, distributed electron cyclotron resonance plasma sputtering, laser induced plasma sputtering etc..). The effects and interactions with the substrates (ion implantation, crystal growth, crystal-phase transformations, microstructures, penetration depth, changes in lattice parameters etc..) are analysed using various techniques such as grazing incidence X-ray diffraction, X-ray reflectometry, X-ray and angle resolved electron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectroscopy, SEM, TEM, IR absorption spectroscopy, UV or visible emission spectroscopy, conversion electron Moessbauer spectroscopy, X-ray fluorescence, mass spectroscopy, optical ellipsometry etc.. Mechanical tests such as scratch, microhardness and wear tests are also performed on the coatings to analyse their mechanical properties. (J.S.)

  18. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  19. Inverse bilayer magnetoelectric thin film sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yarar, E.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Chair for Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Salzer, S.; Höft, M.; Knöchel, R. [Microwave Laboratory, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Chair for Synthesis and Real Structure, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)

    2016-07-11

    Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

  20. Thin film deposition using rarefied gas jet

    Science.gov (United States)

    Pradhan, Sahadev, , Dr.

    2017-06-01

    The rarefied gas jet of aluminium is studied at Mach number Ma = (Uj /√{ kbTj / mg }) in the range .01 PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kbis the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn=0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number, which allows scattering collisions to rapidly direct the atoms to the substrate.