WorldWideScience

Sample records for thin film system

  1. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  2. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  3. A thin film hydroponic system for plant studies

    Science.gov (United States)

    Hines, Robert; Prince, Ralph; Muller, Eldon; Schuerger, Andrew

    1990-01-01

    The Land Pavillion, EPCOT Center, houses a hydroponic, thin film growing system identical to that residing in NASA's Biomass Production Chamber at Kennedy Space Center. The system is targeted for plant disease and nutrition studies. The system is described.

  4. Thin Film

    African Journals Online (AJOL)

    a

    organic substances. KEY WORDS: Photoelectrocatalysis, Titanium dioxide, Cuprous oxide, Composite thin film, Photo electrode. INTRODUCTION ... reddish p-type semiconductor with a direct band gap of 2.0-2.2 eV [18, 19]. ... Photoelectrocatalytic removal of color from water using TiO2 and TiO2/Cu2O electrodes. Bull.

  5. Molecular tailoring of interfaces for thin film on substrate systems

    Science.gov (United States)

    Grady, Martha Elizabeth

    Thin film on substrate systems appear most prevalently within the microelectronics industry, which demands that devices operate in smaller and smaller packages with greater reliability. The reliability of these multilayer film systems is strongly influenced by the adhesion of each of the bimaterial interfaces. During use, microelectronic components undergo thermo-mechanical cycling, which induces interfacial delaminations leading to failure of the overall device. The ability to tailor interfacial properties at the molecular level provides a mechanism to improve thin film adhesion, reliability and performance. This dissertation presents the investigation of molecular level control of interface properties in three thin film-substrate systems: photodefinable polyimide films on passivated silicon substrates, self-assembled monolayers at the interface of Au films and dielectric substrates, and mechanochemically active materials on rigid substrates. For all three materials systems, the effect of interfacial modifications on adhesion is assessed using a laser-spallation technique. Laser-induced stress waves are chosen because they dynamically load the thin film interface in a precise, noncontacting manner at high strain rates and are suitable for both weak and strong interfaces. Photodefinable polyimide films are used as dielectrics in flip chip integrated circuit packages to reduce the stress between silicon passivation layers and mold compound. The influence of processing parameters on adhesion is examined for photodefinable polyimide films on silicon (Si) substrates with three different passivation layers: silicon nitride (SiNx), silicon oxynitride (SiOxNy), and the native silicon oxide (SiO2). Interfacial strength increases when films are processed with an exposure step as well as a longer cure cycle. Additionally, the interfacial fracture energy is assessed using a dynamic delamination protocol. The high toughness of this interface (ca. 100 J/m2) makes it difficult

  6. thin films

    Indian Academy of Sciences (India)

    The anionic precursor was 1% H2O2 solution. Both the cationic and anionic precursors were kept at room temperature (∼300 K). One SILAR cycle consists of two steps: (i) adsorption of Sn4+ ions on the substrate surface for 20 s and (ii) reaction with H2O2 solution for 40 s to form stable SnO2:H2O thin film on the substrate.

  7. Thin films on cantilevers

    NARCIS (Netherlands)

    Nazeer, H.

    2012-01-01

    The main goal of the work compiled in this thesis is to investigate thin films for integration in micro electromechanical systems (MEMS). The miniaturization of MEMS actuators and sensors without compromising their performance requires thin films of different active materials with specific

  8. Optical thin film devices

    Science.gov (United States)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  9. Linking rigid multibody systems via controllable thin fluid films

    DEFF Research Database (Denmark)

    Estupinan, Edgar Alberto; Santos, Ilmar

    2009-01-01

    compressor. The system of equations is numerically solved for the case when the system operates with conventional hydrodynamic lubrication and for several cases of the bearing operating under controlled hybrid lubrication conditions. The analysis of the results is carried out with focus on the behaviour......This work deals with the mathematical modelling of multibody systems interconnected via thin fluid films. The dynamics of the fluid films can be actively controlled by means of different types of actuators, allowing significant vibration reduction of the system components. In this framework......, this paper gives a theoretical contribution to the combined fields of fluid–structure interaction and vibration control. The methodology is applied to a reciprocating linear compressor, where the dynamics of the mechanical components are described with help of multibody dynamics. The crank is linked...

  10. Magnetic coupling mechanisms in particle/thin film composite systems

    Directory of Open Access Journals (Sweden)

    Giovanni A. Badini Confalonieri

    2010-12-01

    Full Text Available Magnetic γ-Fe2O3 nanoparticles with a mean diameter of 20 nm and size distribution of 7% were chemically synthesized and spin-coated on top of a Si-substrate. As a result, the particles self-assembled into a monolayer with hexagonal close-packed order. Subsequently, the nanoparticle array was coated with a Co layer of 20 nm thickness. The magnetic properties of this composite nanoparticle/thin film system were investigated by magnetometry and related to high-resolution transmission electron microscopy studies. Herein three systems were compared: i.e. a reference sample with only the particle monolayer, a composite system where the particle array was ion-milled prior to the deposition of a thin Co film on top, and a similar composite system but without ion-milling. The nanoparticle array showed a collective super-spin behavior due to dipolar interparticle coupling. In the composite system, we observed a decoupling into two nanoparticle subsystems. In the ion-milled system, the nanoparticle layer served as a magnetic flux guide as observed by magnetic force microscopy. Moreover, an exchange bias effect was found, which is likely to be due to oxygen exchange between the iron oxide and the Co layer, and thus forming of an antiferromagnetic CoO layer at the γ-Fe2O3/Co interface.

  11. Novel tribological systems using shape memory alloys and thin films

    Science.gov (United States)

    Zhang, Yijun

    Shape memory alloys and thin films are shown to have robust indentation-induced shape memory and superelastic effects. Loading conditions that are similar to indentations are very common in tribological systems. Therefore novel tribological systems that have better wear resistance and stronger coating to substrate adhesion can be engineered using indentation-induced shape memory and superelastic effects. By incorporating superelastic NiTi thin films as interlayers between chromium nitride (CrN) and diamond-like carbon (DLC) hard coatings and aluminum substrates, it is shown that the superelasticity can improve tribological performance and increase interfacial adhesion. The NiTi interlayers were sputter deposited onto 6061 T6 aluminum and M2 steel substrates. CrN and DLC coatings were deposited by unbalanced magnetron sputter deposition. Temperature scanning X-ray diffraction and nanoindentation were used to characterize NiTi interlayers. Temperature scanning wear and scratch tests showed that superelastic NiTi interlayers improved tribological performance on aluminum substrates significantly. The two-way shape memory effect under contact loading conditions is demonstrated for the first time, which could be used to make novel tribological systems. Spherical indents in NiTi shape memory alloys and thin films had reversible depth changes that were driven by temperature cycling, after thermomechanical cycling, or one-cycle slip-plasticity deformation training. Reversible surface topography was realized after the indents were planarized. Micro- and nano- scale circular surface protrusions arose from planarized spherical indents in bulk and thin film NiTi alloy; line surface protrusions appeared from planarized scratch tracks. Functional surfaces with reversible surface topography can potentially result in novel tribological systems with reversible friction coefficient. A three dimensional constitutive model was developed to describe shape memory effects with slip

  12. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  13. A new radiochromic thin-film dosimeter system

    Science.gov (United States)

    Miller, A.; Batsberg, W.; Karman, W.

    A film dosimeter based on pararosaniline cyanide dissolved in polyvinyl butyral (PVB) has been developed and its properties are described. The dosimeter is made in 3 versions: 1) a clear, thin film that requires a thickness measurement for evaluation, 2) a film with a relatively high absorbance for automatic thickness correction, 3) a UV-protected pressure-sensitive adhesive tape. The response of the dosimeter is independent on the dose rate, and it may be used for routine dose measurement of both gamma and electron irradiation. Its high spatial resolution makes it particularly useful for dose distribution measurements.

  14. Human action pattern monitor for telecare system utilizing magnetic thin film infrared sensor

    International Nuclear Information System (INIS)

    Osada, H.; Chiba, S.; Oka, H.; Seki, K.

    2002-01-01

    The magnetic thin film infrared sensor (MFI) is an infrared sensing device utilizing a temperature-sensitive magnetic thin film with marked temperature dependence in the room temperature range. We propose a human action pattern monitor (HPM) constructed with the MFI, without a monitor camera to save the clients' privacy, as a telecare system

  15. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  16. Transmission and reflection ellipsometry of thin films and multilayer systems.

    Science.gov (United States)

    Bader, G; Ashrit, P V; Truong, V V

    1998-03-01

    Ellipsometric studies are generally carried out in the reflection mode rather than in the transmission mode, requiring invariably opaque substrates or substrates in which the backreflection is minimized or suppressed by different methods. In the present research we used a transmission and reflection photoellipsometry method to study electrochromic materials and their multilayer systems deposited on thick substrates. The role of the substrate is examined carefully, and the contributions from multiple reflections in the substrate are taken into account in the theoretical treatment. This procedure not only allows the study of thin films deposited on quasi-transparent substrates, but when carried out in conjunction with reflection measurements it greatly improves the accuracy in the determination of the optical constants. Optical measurements are carried out on an automatic reflection transmission spectroscopic ellipsometer. Solid-state ionic materials used in electrochromic systems such as indium tin oxide, tungsten oxide, and their multilayer structures deposited on glass substrates are used as examples. A software based on the above theory, optikan, was developed to model and analyze such systems. It is demonstrated that the photoellipsometry method proposed is especially suited to analyzing electrochromic materials and transmitting devices in a nondestructive way.

  17. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  18. Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Lecarpentier, F.; Daglish, M.; Kemmitt, T.

    2001-01-01

    Ferroelectric thin films of lead zirconate titanate Pb(Zr x Ti 1-x )O 3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

  19. Low Cost Thin Film Building-Integrated Photovoltaic Systems

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Subhendu Guha; Dr. Jeff Yang

    2012-05-25

    The goal of the program is to develop 'LOW COST THIN FILM BUILDING-INTEGRATED PV SYSTEMS'. Major focus was on developing low cost solution for the commercial BIPV and rooftop PV market and meet DOE LCOE goal for the commercial market segment of 9-12 cents/kWh for 2010 and 6-8 cents/kWh for 2015. We achieved the 2010 goal and were on track to achieve the 2015 goal. The program consists of five major tasks: (1) modules; (2) inverters and BOS; (3) systems engineering and integration; (4) deployment; and (5) project management and TPP collaborative activities. We successfully crossed all stage gates and surpassed all milestones. We proudly achieved world record stable efficiencies in small area cells (12.56% for 1cm2) and large area encapsulated modules (11.3% for 800 cm2) using a triple-junction amorphous silicon/nanocrystalline silicon/nanocrystalline silicon structure, confirmed by the National Renewable Energy Laboratory. We collaborated with two inverter companies, Solectria and PV Powered, and significantly reduced inverter cost. We collaborated with three universities (Syracuse University, University of Oregon, and Colorado School of Mines) and National Renewable Energy Laboratory, and improved understanding on nanocrystalline material properties and light trapping techniques. We jointly published 50 technical papers in peer-reviewed journals and International Conference Proceedings. We installed two 75kW roof-top systems, one in Florida and another in New Jersey demonstrating innovative designs. The systems performed satisfactorily meeting/exceeding estimated kWh/kW performance. The 50/50 cost shared program was a great success and received excellent comments from DOE Manager and Technical Monitor in the Final Review.

  20. Thin Film Processes

    CERN Document Server

    Vossen, John L.

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application

  1. Novel measurement and monitoring system for forming processes based on piezoresistive thin film systems

    Science.gov (United States)

    Biehl, Saskia; Staufenbiel, Sebastian; Hauschild, Frank

    2009-05-01

    The investigation of a novel sensor system, integrated in the main load region of forming machines, is the challenge. Therefore it is important that the thin film system is multifunctional. It has an excellent tribological quality in combination with a piezoresistive behaviour. The layer system is deposited on the polished surface of a steel substrate. It has such geometries that it can be easily integrated in the drawing cushion of a deep drawing machine. The thin film sensor system exists out of a piezoresistive hydrogenated carbon layer, deposited in a PACVD process. Onto this layer arrays of chromium structures are deposited in a PVD process. The structures are protected against wear by an insulating silicon doped hydrogenated carbon layer. The whole thin film system has a thickness of about 9 μm. During the forming process the steel plate is in direct touch with the sensor system and moves over it. The position of the steel and the load distribution is measured in dependence on the forming stadium. The sensor system works as a control system to ensure that the shape of the product is perfect and without any cracks or creases.

  2. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  3. Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

    International Nuclear Information System (INIS)

    Stoldt, Conrad R; Bright, Victor M

    2006-01-01

    A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film. (topical review)

  4. Thin film hydrogen sensor

    Science.gov (United States)

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  5. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  6. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  7. Opto-acoustic technique to evaluate adhesion strength of thin-film systems

    Directory of Open Access Journals (Sweden)

    S. Yoshida

    2012-06-01

    Full Text Available An opto-acoustic technique is proposed to evaluate the adhesion strength of thin film systems at the film-substrate interface. The thin-film system to be examined is configured as an end-mirror of a Michelson interferometer, and driven from the rear with an acoustic transducer at audible frequencies. The amplitude of the resultant oscillation of the film is quantified as the variation in the contrast of the interferometric fringe pattern observed with a digital camera at 30 frames/s. As a proof of concept, experiment has been conducted with the use of a pair of strongly and weakly adhered Au-coated Si-wafer specimens. The technique successfully differentiates the adhesion strength of the specimens.

  8. Synthesis of CuInS2 thin films by spray pyrolysis deposition system

    Science.gov (United States)

    Hussain, K. M. A.; Podder, J.; Saha, D. K.

    2013-02-01

    Copper indium disulfide (CuInS2) thin films were deposited on the glass substrate by the locally made spray pyrolysis deposition system. The films were characterized by using energy dispersive analytical X-ray (EDAX) spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-VIS-NIR spectrophotometry. The XRD pattern indicated that the prepared CuInS2 thin films are chalcopyrite structure. Lattice parameters and FWHM values were verified by the standard values of JCPDS 270159 file. The EDAX analysis indicated the stoichiometric ratio of 1.14:1:1.88 (CIS-2) thin films. The SEM analysis showed that the average grain size of the film was 100-800 nm and that of XRD data indicate the values of 30-50 nm. The high absorption co-efficient and 1.48 eV band gap of the films indicate that the films are useful as an absorber for photovoltaic application in the solar cell.

  9. Organic donor-acceptor thin film systems. Towards optimized growth conditions

    Energy Technology Data Exchange (ETDEWEB)

    Keller, Kerstin Andrea

    2009-06-30

    In this work the preparation of organic donor-acceptor thin films was studied. A chamber for organic molecular beam deposition was designed and integrated into an existing deposition system for metallic thin films. Furthermore, the deposition system was extended by a load-lock with integrated bake-out function, a chamber for the deposition of metallic contacts via stencil mask technique and a sputtering chamber. For the sublimation of the organic compounds several effusion cells were designed. The evaporation characteristic and the temperature profile within the cells was studied. Additionally, a simulation program was developed, which calculates the evaporation characteristics of different cell types. The following processes were integrated: evaporation of particles, migration on the cell walls and collisions in the gas phase. It is also possible to consider a temperature gradient within the cell. All processes can be studied separately and their relative strength can be varied. To verify the simulation results several evaporation experiments with different cell types were employed. The thickness profile of the prepared thin films was measured position-dependently. The results are in good agreement with the simulation. Furthermore, the simulation program was extended to the field of electron beam induced deposition (EBID). The second part of this work deals with the preparation and characterization of organic thin films. The focus hereby lies on the charge transfer salt (BEDT-TTF)(TCNQ), which has three known structure variants. Thin films were prepared by different methods of co-evaporation and were studied with optical microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy (EDX).The formation of the monoclinic phase of (BEDT-TTF)(TCNQ) could be shown. As a last part tunnel structures were prepared as first thin film devices and measured in a He{sub 4} cryostat. (orig.)

  10. Silicon carbide thin films for high temperature microelectromechanical systems

    Science.gov (United States)

    Fleischman, Aaron Judah

    Silicon Carbide (SiC) was studied for use as a material in microelectromechanical systems (MEMS). An APCVD reactor was built to deposit SiC on 100-mm diameter substrates. 3C-SiC films were grown heteroepitaxially atop 100-mm Si wafers. SiC was deposited atop suitable sacrificial layers of polysilicon and thermal oxide. The reactor gas flow was modeled using finite element techniques. The gas flow formed a recirculating pattern, with fresh reactant gases injected at the top of the reactor, traveling down the inside sidewalls and introduced at the bottom of the wafer, forming a plume of heated gases rising to the top of the reactor. This recirculation pattern explains the gradually decreasing growth rate from the wafer's bottom to its top as reactant gases are gradually depleted as they rise. Intentional doping of 3C-SiC films was studied, using diborane and phosphine dopant sources. SIMS indicated that B and P could be incorporated into 3C-SiC films, however B doped films were electrically compensated due to trace amounts of nitrogen in the diborane. Boron concentrations above 3C-SiC's solid solubility caused the SiC to become polycrystalline. Phosphorus incorporation was less predictable and did not vary linearly with phosphine flow rates. A reactive ion etch (REE) process was developed to etch 3C-SiC. Addition of He to the plasma chemistry enhanced the etch rates and etch anisotropy of the 3C-SiC. The etch recipe also produced similar results for polycrystalline SiC on polysilicon and thermal oxide. A maximum SiC etch rate of 1,267 A/min with a selectivity of 1.4 to Si was obtained. Using the above methods, SiC resonant devices were fabricated using polysilicon and thermal oxide as sacrificial layers. Polysilicon resonant devices were fabricated for comparison. The devices were tested by measuring their resonant frequency at room and elevated temperatures to 900°C to determine Young's modulus and its temperature dependence. All devices showed resonant frequency

  11. Development of novel control system to grow ZnO thin films by reactive evaporation

    Directory of Open Access Journals (Sweden)

    Gerardo Gordillo

    2016-07-01

    Full Text Available This work describes a novel system implemented to grow ZnO thin films by plasma assisted reactive evaporation with adequate properties to be used in the fabrication of photovoltaic devices with different architectures. The innovative aspect includes both an improved design of the reactor used to activate the chemical reaction that leads to the formation of the ZnO compound as an electronic system developed using the virtual instrumentation concept. ZnO thin films with excellent opto-electrical properties were prepared in a reproducible way, controlling the deposition system through a virtual instrument (VI with facilities to control the amount of evaporated zinc involved in the process that gives rise to the formation of ZnO, by means of the incorporation of PID (proportional integral differential and PWM (pulse width modulation control algorithms. The effectiveness and reliability of the developed system was verified by obtaining with good reproducibility thin films of n+-ZnO and i-ZnO grown sequentially in situ with thicknesses and resistivities suitable for use as window layers in chalcopyrite based thin film solar cells.

  12. Construction of sputtering system and preparation of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Kaynak, E.

    2000-01-01

    The preparation of high T c superconducting thin film is important both for the understanding of fundamental behaviours of these materials and for the investigations on the usefulness of technological applications. High quality thin films can be prepared by various kinds of techniques being used today. Among these, sputtering is the most preferred one. The primary aim of this work is the construction of a r. f. and c. magnetron sputtering system. For this goal, a magnetron sputtering system was designed and constructed having powers up to 500W (r.f.) and 1KW (d.c.) that enables to deposit thin films of various kinds of materials: metals, ceramics and magnetic materials. The temperature dependence of the electrical resistance of the films was investigated by using four-point probe method. The zero resistance and the transition with of the films were measured as 80-85 K, and 2-9 K, respectively. The A.C. susceptibility experiments were done by utilising the system that was designed and constructed. The applied field dependence of the real and imaginary components of the susceptibility that were measured between the 77-120 K temperature interval and at a fixed frequency was investigated

  13. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  14. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  15. Epitaxial thin films

    Science.gov (United States)

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  16. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  17. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  18. Protein thin film machines.

    Science.gov (United States)

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-12-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fueled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  19. Operation of a Thin-Film Inflatable Concentrator System Demonstrated in a Solar Thermal Vacuum Environment

    Science.gov (United States)

    Wong, Wayne A.

    2002-01-01

    Thin-film inflatable solar concentrators offer significant advantages in comparison to stateof- the-art rigid panel concentrators, including low weight, low stowage volume, and simple gas deployment. From June 10 to 22, 2001, the ElectroMagnetic Radiation Control Experiment (EMRCE) Team used simulated solar energy to demonstrate the operation of an inflatable concentrator system at NASA Glenn Research Center's Tank 6 thermal vacuum facility. The joint Government/industry test team was composed of engineers and technicians from Glenn, the Air Force Research Laboratory, SRS Technologies, and ATK Thiokol Propulsion. The research hardware consisted of the following: 1) A thin-film inflatable concentrator; 2) The hexapod pointing and focus control system; 3) Two rigidized support struts using two candidate technologies - ultraviolet-rigidized glass and radiation-cured isographite.

  20. Thermal treatment of superconductor thin film of the BSCCO system using domestic microwave oven

    Energy Technology Data Exchange (ETDEWEB)

    Silveira, J.B.; Carvalho, C.L.; Torsoni, G.B.; Aquino, H.A. [Grupo de Desenvolvimento e Aplicacoes de Materiais, Departamento de Fisica e Quimica, Faculdade de Engenharia de Ilha Solteira, Univers Estadual Paulista-UNESP, Caixa Postal 31, 15385-000 Ilha Solteira, SP (Brazil); Zadorosny, R., E-mail: rafazad@yahoo.com.br [Grupo de Desenvolvimento e Aplicacoes de Materiais, Departamento de Fisica e Quimica, Faculdade de Engenharia de Ilha Solteira, Univers Estadual Paulista-UNESP, Caixa Postal 31, 15385-000 Ilha Solteira, SP (Brazil)

    2012-08-15

    In this work, we report the preparation of a superconductor thin film of the BSCCO system using a good quality powder with nominal composition Bi{sub 1.8}Pb{sub 0.4}Sr{sub 2}CaCu{sub 2}O{sub x} which was thermally treated using a domestic microwave oven (2.45 GHz, 800 W). This film was grew on a single crystal of LaAlO{sub 3} (1 0 0) substrate and exhibited a crystalline structure with the c-axis perpendicular to the plane of the substrate. An onset superconducting transition temperature was measured at 80 K.

  1. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  2. Analysis of Hard Thin Film Coating

    Science.gov (United States)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  3. Functional organic thin films

    OpenAIRE

    Scharnberg, Michael

    2007-01-01

    Organic thin films are used in many technological and engineering applications nowadays. They find use as coatings, sensors, detectors, as matrix materials in nanocomposites, as self-assembled monolayers for surface functionalization, as low-k dielectrics in integrated circuits and in advanced organic electronic applications like organic light emitting diodes, organic field effect transistors and organic photovoltaics (esp. organic solar cells) and many other applications. OLED displays are n...

  4. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  5. Magnetic Thin Films for Perpendicular Magnetic Recording Systems

    Science.gov (United States)

    Sugiyama, Atsushi; Hachisu, Takuma; Osaka, Tetsuya

    In the advanced information society of today, information storage technology, which helps to store a mass of electronic data and offers high-speed random access to the data, is indispensable. Against this background, hard disk drives (HDD), which are magnetic recording devices, have gained in importance because of their advantages in capacity, speed, reliability, and production cost. These days, the uses of HDD extend not only to personal computers and network servers but also to consumer electronics products such as personal video recorders, portable music players, car navigation systems, video games, video cameras, and personal digital assistances.

  6. Optical pump-and-probe test system for thermal characterization of thin metal and phase-change films

    International Nuclear Information System (INIS)

    Watabe, Kazuo; Polynkin, Pavel; Mansuripur, Masud

    2005-01-01

    A single-shot optical pump-and-probe test system is reported. The system is designed for thermal characterization of thin-film samples that can change their phase state under the influence of a short and intense laser pulse on a subnanosecond time scale. In combination with numerical analysis, the system can be used to estimate thermal constants of thin films, such as specific heat and thermal conductivity. In-plane and out-of plane thermal conductivity can be estimated independently. The system is intended for use in research on optical data storage and material processing with pulsed laser light. The system design issues are discussed. As application examples, we report on using the system to study thermal dynamics in two different thin-film samples: a gold film on a glass substrate (a single-phase system) and the quadrilayer phase-change stack typical in optical data-storage applications

  7. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  8. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  9. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  10. An introduction to fast dissolving oral thin film drug delivery systems: a review.

    Science.gov (United States)

    Kathpalia, Harsha; Gupte, Aasavari

    2013-12-01

    Many pharmaceutical companies are switching their products from tablets to fast dissolving oral thin films (OTFs). Films have all the advantages of tablets (precise dosage, easy administration) and those of liquid dosage forms (easy swallowing, rapid bioavailability). Statistics have shown that four out of five patients prefer orally disintegrating dosage forms over conventional solid oral dosages forms. Pediatric, geriatric, bedridden, emetic patients and those with Central Nervous System disorders, have difficulty in swallowing or chewing solid dosage forms. Many of these patients are non-compliant in administering solid dosage forms due to fear of choking. OTFs when placed on the tip or the floor of the tongue are instantly wet by saliva. As a result, OTFs rapidly hydrate and then disintegrate and/or dissolve to release the medication for local and/or systemic absorption. This technology provides a good platform for patent non- infringing product development and for increasing the patent life-cycle of the existing products. The application of fast dissolving oral thin films is not only limited to buccal fast dissolving system, but also expands to other applications like gastroretentive, sublingual delivery systems. This review highlights the composition including the details of various types of polymers both natural and synthetic, the different types of manufacturing techniques, packaging materials and evaluation tests for the OTFs.

  11. Polycaprolactone thin-film drug delivery systems: Empirical and predictive models for device design.

    Science.gov (United States)

    Schlesinger, Erica; Ciaccio, Natalie; Desai, Tejal A

    2015-12-01

    To define empirical models and parameters based on theoretical equations to describe drug release profiles from two polycaprolactone thin-film drug delivery systems. Additionally, to develop a predictive model for empirical parameters based on drugs' physicochemical properties. Release profiles from a selection of drugs representing the standard pharmaceutical space in both polycaprolactone matrix and reservoir systems were determined experimentally. The proposed models were used to calculate empirical parameters describing drug diffusion and release. Observed correlations between empirical parameters and drug properties were used to develop equations to predict parameters based on drug properties. Predictive and empirical models were evaluated in the design of three prototype devices: a levonorgestrel matrix system for on-demand locally administered contraception, a timolol-maleate reservoir system for glaucoma treatment, and a primaquine-bisphosphate reservoir system for malaria prophylaxis. Proposed empirical equations accurately fit experimental data. Experimentally derived empirical parameters show significant correlations with LogP, molecular weight, and solubility. Empirical models based on predicted parameters accurately predict experimental release data for three prototype systems, demonstrating the accuracy and utility of these models. The proposed empirical models can be used to design polycaprolactone thin-film devices for target geometries and release rates. Empirical parameters can be predicted based on drug properties. Together, these models provide tools for preliminary evaluation and design of controlled-release delivery systems. Copyright © 2015. Published by Elsevier B.V.

  12. Micromechanics of substrate-supported thin films

    Science.gov (United States)

    He, Wei; Han, Meidong; Wang, Shibin; Li, Lin-An; Xue, Xiuli

    2017-09-01

    The mechanical properties of metallic thin films deposited on a substrate play a crucial role in the performance of micro/nano-electromechanical systems (MEMS/NEMS) and flexible electronics. This article reviews ongoing study on the mechanics of substrate-supported thin films, with emphasis on the experimental characterization techniques, such as the rule of mixture and X-ray tensile testing. In particular, the determination of interfacial adhesion energy, film deformation, elastic properties and Bauschinger effect are discussed.

  13. Magnetism in heterogeneous thin film systems: Resonant X-ray scattering studies

    International Nuclear Information System (INIS)

    Kortright, J.B.; Jiang, J.S.; Bader, S.D.; Hellwig, O.; Marguiles, D.T.; Fullerton, E.E.

    2002-01-01

    Magnetic and chemical heterogeneity are common in a broad range of magnetic thin film systems. Emerging resonant soft x-ray scattering techniques are well suited to resolve such heterogeneity at relevant length scales. Resonant x-ray magneto-optical Kerr effect measurements laterally average over heterogeneity but can provide depth resolution in different ways, as illustrated in measurements resolving reversible and irreversible changes in different layers of exchange-spring heterostructures. Resonant small-angle scattering measures in-plane heterogeneity and can resolve magnetic and chemical scattering sources in different ways, as illustrated in measurements of granular alloy recording media

  14. Estimating the Effects of Module Area on Thin-Film Photovoltaic System Costs: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fu, Ran [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Silverman, Timothy J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Woodhouse, Michael A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sun, Xingshu [Purdue University; Alam, Muhammad A [Purdue University

    2018-03-29

    We investigate the potential effects of module area on the cost and performance of photovoltaic systems. Applying a bottom-up methodology, we analyzed the costs associated with thin-film modules and systems as a function of module area. We calculate a potential for savings of up to 0.10 dollars/W and 0.13 dollars/W in module manufacturing costs for CdTe and CIGS respectively, with large area modules. We also find that an additional 0.04 dollars/W savings in balance-of-systems costs may be achieved. Sensitivity of the dollar/W cost savings to module efficiency, manufacturing yield, and other parameters is presented. Lifetime energy yield must also be maintained to realize reductions in the levelized cost of energy; the effects of module size on energy yield for monolithic thin-film modules are not yet well understood. Finally, we discuss possible non-cost barriers to adoption of large area modules.

  15. Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

    Science.gov (United States)

    Islam, M. S.; Hossain, M. F.; Razzak, S. M. A.; Haque, M. M.; Saha, D. K.

    2016-05-01

    The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05mbar, source-substrate distance of 3cm and source temperature 700∘C. Then, high-crystalline ZnO thin film is obtained by annealing at 500∘C for 2h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10min and 20min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20min has excitation absorption-edge at 369nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380nm. The gap energy of ZnO film is decreased from 3.14eV to 3.09eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

  16. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  17. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  18. Ferromagnetic thin films

    Science.gov (United States)

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  19. Characterization of organic thin films

    CERN Document Server

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  20. X-ray fluorescence system for thin film composition analysis during deposition

    International Nuclear Information System (INIS)

    Formica, Sarah P.; Lee, Susanne M.

    2005-01-01

    A fast-response-time X-ray fluorescence (XRF) system was designed with a monolithic polycapillary focusing optic for in situ composition profiling during materials deposition. The polycapillary optic produced 10 5 times more intensity at the sample than a pinhole, allowing the detector placement to be outside most deposition chambers. The resultant XRF signals were so strong that measurement times were comparable to monolayer growth times. XRF line scans from Ge 1-x Sn x thin films were used to map Sn concentration versus surface position with a 10 μm resolution. The extrapolated instrumental detection limit using a 20 W Cu source was 10 12 atoms (ng). XRF from a 100-nm ion-implanted Ge 0.72 Sn 0.28 sample demonstrated the system's ability to monitor initial growth stages during deposition

  1. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  2. Performance Characterization of Monolithic Thin Film Resistors

    Science.gov (United States)

    Yin, Rong

    Thin film resistors have a large resistance range and stable performance under high temperature operating condition. Thin film resistors trimmed by laser beam are able to achieve very high precision on resistance value. As a result, thin film resistors have been widely used to improve the performance of integrated circuits such as operational amplifier, analog-to-digital (A/D) and digital -to-analog (D/A) converters, etc. In this dissertation, a new class of thin film resistors, silicon chrome (SiCr) thin film resistors, has been investigated at length. From thin film characterization to aging behavior modelling, we have carried out a series of engineering activities. The characteristics of the SiCr thin film incorporated into three bipolar processes were first determined. After laser trimming, we have measured a couple of physical parameters of the SiCr film in the heat affected zone (HAZ). This is the first time the sheet resistance and the temperature coefficient of resistance (TCR) of thin film in the HAZ have been characterized. Both thermal and d.c. load accelerated aging tests were performed. The test structures were subjected to the aging for 1000 hours. Based on the test data, we not only evaluated the classical thermal aging model for untrimmed thin film resistors, but also established several empirical thermal aging models for trimmed resistors and d.c. load aging models for both trimmed and untrimmed thin film resistors. All the experiments were carried out for both conventional bar resistors and our new Swiss Cheese (SC) resistors. For the first time, the performance of laser trimmed SC resistors, which was experimentally evaluated, shown a clear superiority over that of trimmed bar resistors. Besides these experiments, we have examined different die attach techniques and their effects on thin film resistors. Also, we have developed a number of hardware systems and software tools, such as a temperature controller, d.c. current source, temperature

  3. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Bae, J.W.; Kim, J.S.; Yeom, G.Y.

    2001-01-01

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  4. Effect of hydroxyl bond formation on the adhesion improvement of a polyethylene copper thin film system

    International Nuclear Information System (INIS)

    Camacho, M.; Blantocas, G.; Ramos, H.

    2009-01-01

    Formation of hydroxyl bonds on the surface of a gas plasma treated high density polyethylene (HDPE) sheets significantly enhanced the adhesion strength of the polyethylene copper thin film system. Surface treatments using oxygen gas plasmas at varying plasma parameters are applied in this study to identify the most effective plasma parameters that would promote the best adhesion strength. Analysis of gas plasma adulterated HDPE sheets showed best enhancement of polyethylene copper adhesion after an oxygen gas plasma treatment for 60 minutes at 5mA discharge current. Scanning Electron Microscopy Analysis, Fourier Transform Infrared Spectroscopy and Adhesion measurements using Pull out Force Analysis were used to measure the changes in the surface chemistry and surface topology of the HDPE sheets. (author)

  5. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    Wintec

    variety of tungstate materials, such as thick-film manga- nese tungstate, have been applied as humidity sensors. (Qu and Mayer 1997). The humidity sensing characteristics of bulk metal oxide–tungsten oxide systems have also been studied in the literature (Ichinose 1993). Thin films of tungsten oxide have been prepared ...

  6. Measurements of acoustic properties for thin films

    International Nuclear Information System (INIS)

    Kushibiki, J.; Maehara, H.; Chubachi, N.

    1982-01-01

    A measurement method for determining thin-film acoustic properties, such as characteristic acoustic impedance, sound velocity, density, and stiffness constant, is developed with a simple measurement principle and high measurement accuracy. The acoustic properties are determined from a maximum reflection loss and a center frequency obtained through a frequency response of the reflection loss for an acoustic transmission line composed of a sapphire/film/water system by using the acoustic pulse mode measurement system in the UHF range. The determination of the acoustic properties is demonstrated for sputtered fused quartz film, low-expansion borosilicate glass films, and chalcogenide glass films of evaporated As 2 S 3 and As 2 Se 3 , within the measurement accuracy around 1--2%. It is also found that the acoustic properties of thin films are generally different from those of bulk materials, depending on the fabrication techniques and conditions

  7. Development of GUI Temperature Monitoring System based on Thin-Film Optical Filter

    Directory of Open Access Journals (Sweden)

    Hilal Adnan Fadhil

    2017-08-01

    Full Text Available Fiber optic sensors have progressed rapidly in recent year as because it has many advantages over other types of sensors in terms of freedom from electromagnetic radiation, wide bandwidth, economy, can withstand high temperature and under harsh environment. Due to those reason a thermo sensor based on fiber optic which utilizes a thin-film optical band-pass filter has been developed. However, the proposed system has advantages over the fiber Bragg grating sensor which can observe the temperature in small area and low transmission loss. The simulation software is used to design a Graphical User Interface (GUI. The GUI system allows the user to monitor the condition and the status of the current temperature. The monitoring system presented in this paper is divided into three basic sub-systems which are retrieve the real-time data system, displaying out the data system, and warning system. This GUI system used to collect the data and process the data for displaying the current data and further checking as a history data has been keep. The values obtained of thermo sensor are measured as 30°C till 330°C and the wavelength values are between 1552.93nm till 1557.25nm

  8. Thin-Film Power Transformers

    Science.gov (United States)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  9. Proceedings of the FNCA 2003 workshop on application of electron accelerator. Radiation system for thin film

    International Nuclear Information System (INIS)

    Yoshii, Fumio; Kume, Tamikazu

    2004-06-01

    'Forum for Nuclear Cooperation in Asia (FNCA) Workshop on Application of Electron Accelerator' was sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) and co-hosted by Malaysian Institute for Nuclear Technology Research (MINT) and Japan Atomic Energy Research Institute (JAERI). It was held at the Legend Hotel, Kuala Lumpur, Malaysia from 18 to 22 August 2003. The Workshop was attended by 28 experts on application of electron accelerator from each of the participating countries, i.e., China, Indonesia, Korea, Malaysia, The Philippines, Thailand and Vietnam, and 5 participants from Japan. On the first day, a National Executive Management Seminar on Application of Electron Accelerator was held and attended by 87 participants. Total of 19 papers including Seminar lectures, invited papers on film treatment by electron beam, and country reports on EB irradiation system were presented. The major areas of interest of FNCA member states for cooperation were identified for application of low energy electron accelerator as liquid, thin film and granules. The flue gas and wastewater treatments were added to the above major areas. Based on the proposal from the participating countries, discussions were carried out to re-formulate the work plan of the project for three years until FY 2004. All manuscripts submitted by every speaker were included in the proceedings. The 19 of the presented papers are indexed individually. (J.P.N.)

  10. Rigid Biopolymer Nanocrystal Systems for Controlling Multicomponent Nanoparticle Assembly and Orientation in Thin Film Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Jennifer [Univ. of Colorado, Boulder, CO (United States)

    2016-10-31

    We have discovered techniques to synthesize well-defined DN conjugated nanostructures that are stable in a wide variety of conditions needed for DNA mediated assembly. Starting from this, we have shown that DNA can be used to control the assembly and integration of semiconductor nanocrystals into thin film devices that show photovoltaic effects.

  11. Laser applications in thin-film photovoltaics

    Science.gov (United States)

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2010-08-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laser-based fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH4), silane radicals (SiH3, SiH2, SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.

  12. High color fidelity thin film multilayer systems for head-up display use

    Science.gov (United States)

    Tsou, Yi-Jen D.; Ho, Fang C.

    1996-09-01

    Head-up display is gaining increasing access in automotive vehicles for indication and position/navigation purposes. An optical combiner, which allows the driver to receive image information from outside and inside of the automobile, is the essential part of this display device. Two multilayer thin film combiner coating systems with distinctive polarization selectivity and broad band spectral neutrality are discussed. One of the coating systems was designed to be located at the lower portion of the windshield. The coating reduced the exterior glare by approximately 45% and provided about 70% average see-through transmittance in addition to the interior information display. The other coating system was designed to be integrated with the sunshield located at the upper portion of the windshield. The coating reflected the interior information display while reducing direct sunlight penetration to 25%. Color fidelity for both interior and exterior images were maintained in both systems. This facilitated the display of full-color maps. Both coating systems were absorptionless and environmentally durable. Designs, fabrication, and performance of these coating systems are addressed.

  13. Evaporation system and method for gas jet deposition of thin film materials

    Science.gov (United States)

    Schmitt, J.J.; Halpern, B.L.

    1994-10-18

    A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.

  14. Nanostructured thin film coatings with different strengthening effects

    Directory of Open Access Journals (Sweden)

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  15. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  16. Theoretical Study on Synchronous Characterization of Surface and Interfacial Mechanical Properties of Thin-Film/Substrate Systems with Residual Stress Based on Pressure Blister Test Technique

    Directory of Open Access Journals (Sweden)

    Zhi-xin Yang

    2018-01-01

    Full Text Available In this study, based on the pressure blister test technique, a theoretical study on the synchronous characterization of surface and interfacial mechanical properties of thin-film/substrate systems with residual stress was presented, where the problem of axisymmetric deformation of a blistering film with initial stress was analytically solved and its closed-form solution was presented. The expressions to determine Poisson’s ratios, Young’s modulus, and residual stress of surface thin films were derived; the work done by the applied external load and the elastic energy stored in the blistering thin film were analyzed in detail and their expressions were derived; and the interfacial adhesion energy released per unit delamination area of thin-film/substrate (i.e., energy release rate was finally presented. The synchronous characterization technique presented here has theoretically made a big step forward, due to the consideration for the residual stress in surface thin films.

  17. The optical properties and applications of AlN thin films prepared by a helicon sputtering system

    CERN Document Server

    Chiu, W Y; Kao, H L; Jeng, E S; Chen, J S; Jaing, C C

    2002-01-01

    AlN thin films were grown on SiO sub 2 /Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by x-ray diffraction (XRD) and spectroscopic ellipsometer. The optimized films exhibit highly oriented, with only (002) peak shown in a theta-2 theta scan XRD pattern, and extremely smooth surface with rms roughness of 2 Aa. The extinction coefficient of the film was 4x10 sup - sup 4 , which is lower than that of AlN films grown by conventional sputtering. Double-layer antireflection (DLAR) coating using AlN and Al sub 3 O sub 3 grown on quartz has been demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates with the measurement error less than 0.2%. AlN films prepared by Helicon sputtering thus are potential for optical application.

  18. A prism coupler technique for characterizing thin film II-VI semiconductor systems

    Science.gov (United States)

    Peiris, F. C.; Lee, S.; Bindley, U.; Furdyna, J. K.

    1998-11-01

    This article has two objectives. First, we determine the indices of refraction n of a series of molecular beam epitaxy-grown Zn1-xCdxSe epilayers using a technique based on coupling of evanescent waves via a prism into a semiconductor film. Highly precise values of n, and their dependence on the alloy composition x, are obtained for photon energies below the band gap of the alloy material. And second, we use these results to demonstrate the usefulness of the prism coupler method as a very reliable, convenient, and accurate tool for simultaneous determination of composition of semiconductor alloys in thin film form (since n depends on composition), and the film thickness. This method determines the film thickness with typical uncertainty of less than 0.5%.

  19. ZnO and ZnSe thin films grown by Atomic Layer Epitaxy in a gas flow system

    Science.gov (United States)

    Godlewski, Marek; Guziewicz, Elzbieta; Kopalko, Krzysztof; Lusalowska, Elzbieta

    2003-03-01

    In the presentation we will briefly review our recent works on thin films of ZnO and ZnSe for possible applications in opto-electronics. Thin films of ZnO were grown by four different methods on either semiconductor substrates or on a glass plates. The latter system was successfully used as a substrate for deposition of amorphous GaN epilayers, using low temperature plasma-assisted MOCVD technique. Properties of ALE-grown ZnO films and of GaN epilayers grown on ZnO buffer layer will be shortly analyzed. Thin films of ZnSe were grown using synthesis from Zn and Se. These films show bright white color light emission. Temperature of the emission and brightness can be optimized by either modifications in a growth procedure or variations in excitation conditions. Nature of white emission and optimization procedures will be described. This work was partly supported by grant no. PBZ-KBN-044/P03/2001 of KBN. The ALE reactor was bought using SEZAM grant of Foundation for Polish Science.

  20. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  1. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  2. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  3. Structure of thin film brush-coated nanoparticle/homopolymer systems

    Science.gov (United States)

    Green, Peter; Kim, Jenny; Chen, Chelsea

    2010-03-01

    Nanoparticles (NPs) are incorporated within polymer hosts in order to prepare nanocomposites with ``tailored'' properties. However, understanding and controlling particle aggregation, and the structure, in these polymer nanocomposites (PNCs) remains an important challenge. We examine the phase behavior of thin film mixtures of polystyrene (PS)-grafted gold nanoparticles with different polymer hosts: PS, polymethyl methacrylate (PMMA); tetramethyl bisphenol polycarbonate (TMPC) and poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV). We show that the phase behavior, and more importantly the nanoparticle distribution, is controlled by the enthalpic interaction parameter between the host chains and the grafted chains, the grafting density, g, the degrees of polymerization of the grafted chains and the host chains, N and P, respectively and the nanoparticle size, D. We illustrate conditions under which the entropic interactions have a more significant effect on the structure than the enthalpic interactions. Finally we illustrate conditions where the nanoparticles behave like ``hard'' spheres and conditions under which the mixture behaves like a linear chain/polymer micelle-like system.

  4. Chalcogenide-based system and its thin films for phase change optical data storage

    Science.gov (United States)

    Sharma, Yagya D.; Bhatnagar, Promod K.

    2004-09-01

    Over recent years the demand for optical data storage devices with high speed has become increasingly more evident. Phase change optical storage is based on the rapid crystalline to amorphous (and vice versa) transition in a thin phase change layer enabled by laser induced heating. Among some of the potential candidates, AgSbTe alloy appears to be one of the latest promising materials that have drawn worldwide attention. Using this material as the active layer has other advantages such as the problem of material flow is reduced to a great extent. Moreover the marks written in AgSbTe based media have a well defined shape with sharp edges, leading to intrinsically lower jitter values than observed for GeSbTe based media. In the present work Ag x-Sb 2 (1-x)-Te 3 (1-x) alloys and films are developed for different composition. The present work describes the systematic study of thermal, structural and optical properties of amorphous Ag-Sb-Te system

  5. Preparation of thin vyns films

    International Nuclear Information System (INIS)

    Blanc, R.; Chedin, P.; Gizon, A.

    1965-01-01

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm 2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation [fr

  6. Silver buffer layers for YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Tel Aviv Univ. (Israel). Center for Technol. Education Holon

    1999-09-01

    A simple economical conventional vacuum system was used for evaporation of YBCO thin films on as-deposited unbuffered Ag layers on MgO substrates. The subsequent heat treatment was carried out in low oxygen partial pressure at a relative low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using dc four probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). (orig.)

  7. Laser applications in thin-film photovoltaics

    OpenAIRE

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2009-01-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are descri...

  8. Nanocrystal thin film fabrication methods and apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  9. Capillary stress in microporous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Samuel, J.; Hurd, A.J.; Frink, L.J.D.; Swol, F. van [Sandia National Labs., Albuquerque, NM (United States); Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States). Ceramic Processing Science Dept.]|[Univ. of New Mexico, Albuquerque, NM (United States). Center for Micro Engineering Ceramics; Raman, N.K. [Univ. of New Mexico, Albuquerque, NM (United States). Center for Micro Engineered Ceramics

    1996-06-01

    Development of capillary stress in porous xerogels, although ubiquitous, has not been systematically studied. The authors have used the beam bending technique to measure stress isotherms of microporous thin films prepared by a sol-gel route. The thin films were prepared on deformable silicon substrates which were then placed in a vacuum system. The automated measurement was carried out by monitoring the deflection of a laser reflected off the substrate while changing the overlying relative pressure of various solvents. The magnitude of the macroscopic bending stress was found to reach a value of 180 MPa at a relative pressure of methanol, P/Po = 0.001. The observed stress is determined by the pore size distribution and is an order of magnitude smaller in mesoporous thin films. Density Functional Theory (DFT) indicates that for the microporous materials, the stress at saturation is compressive and drops as the relative pressure is reduced.

  10. study in polymer thin films

    Indian Academy of Sciences (India)

    TECS

    carry out a careful study of steady state conduction of poly- styrene (PS) thin film thermo-electrets sandwiched be- tween metal electrodes both in doped and undoped forms. 2. Experimental. 2.1 Sample preparation. Polystyrene supplied by Polymer Chemical Industry,. Mumbai and naphthalene by S.G. Sisco Pvt Ltd., New ...

  11. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    1VES College of Arts, Science and Commerce, Sindhi Society, Chembur, Mumbai 400 071,. India. 2UGC-DAE Consortium for Scientific Research, R5 Shed, ... gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity. Keywords. Permalloy; NiFe thin films; NiFe ...

  12. Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

    Science.gov (United States)

    Kim, Hwa-Min; Lee, Chang Hyun; Shon, Sun Young; Kim, Bong Hwan

    2017-11-01

    Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al2O3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10-4 Ω cm, 7.0 × 10-4 Ω cm, and 7.4 × 10-4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400-700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400-700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).

  13. Nano-crystalline Ag–PbTe thermoelectric thin films by a multi-target PLD system

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, E., E-mail: emilia.cappelli@ism.cnr.it [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Bellucci, A. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Dip. Fisica, Un. Roma Sapienza, Piazzale Aldo Moro 2, 00185 Rome (Italy); Medici, L. [CNR-IMAA, Tito Scalo, 85050 Potenza (Italy); Mezzi, A.; Kaciulis, S. [CNR-ISMN, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Fumagalli, F.; Di Fonzo, F. [Center Nano Science Technology @Polimi, I.I.T., Via Pascoli 70/3, 20133 Milano (Italy); Trucchi, D.M. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy)

    2015-05-01

    Highlights: • Thermoelectric PbTe thin films, with increasing Ag percentage, were deposited by PLD. • Almost stoichiometric PbTe (Ag doped) films were grown, as verified by XPS analysis. • GI-XRD established the formation of cubic PbTe, with nano-metric structure (∼35 nm). • Surface resistivity shows an increase in conductivity, with increasing Ag doping. • From Seebeck values and XPS depth analysis, 10% Ag seems to be the solubility limit. - Abstract: It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical–chemical and electronic properties was evaluated in the range 300–575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30–35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

  14. Microstructure of Thin Films

    Science.gov (United States)

    1990-02-07

    resultant film could be varied right up to virtually pure aluminum oxide simply by varying the background oxygen pressure. More recently we have been...aT , m..a, lot,, o ,,f,02,d I4 k -1-1..... autocovariance lengths, less than 0.5 um, indicate that , 514n, ob0 o p’,Ofclllc....,,o,,oy0,1- agua sblrt

  15. Cubic erbium trihydride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Adams, D.P., E-mail: dpadams@sandia.gov; Rodriguez, M.A.; Romero, J.A.; Kotula, P.G.; Banks, J.

    2012-07-31

    High-purity, erbium hydride thin films have been deposited onto {alpha}-Al{sub 2}O{sub 3} and oxidized Si by reactive sputtering methods. Rutherford backscattering spectrometry and elastic recoil detection show that films deposited at temperatures of 35, 150 and 275 Degree-Sign C have a composition of 3H:1Er. Erbium trihydride films consist of a face-centered cubic erbium sub-lattice with a lattice parameter in the range of 5.11-5.20 A. The formation of cubic ErH{sub 3} is intriguing, because previous studies demonstrate a single trihydride phase with a hexagonal metal sub-lattice. The formation of a stable, cubic trihydride phase is attributed to a large, in-plane stress resulting from ion beam sputter deposition. - Highlights: Black-Right-Pointing-Pointer Cubic erbium trihydride thin films produced by ion beam sputter deposition. Black-Right-Pointing-Pointer Face-centered cubic metal sub-lattice verified by X-ray and electron diffraction. Black-Right-Pointing-Pointer Composition evaluated using four different techniques. Black-Right-Pointing-Pointer Film stress monitored during deposition. Black-Right-Pointing-Pointer Formation of cubic erbium trihydride attributed to a large, in-plane film stress.

  16. A thin alanine-polyethylene film dosimetry system with diffuse reflection spectrophotometric evaluation

    International Nuclear Information System (INIS)

    Zagorski, Z.P.; Rafalski, A.

    1995-01-01

    Characteristics of a new alanine dosimeter in the shape of a thin film, with the measurement of optical absorption of the CH 3 CHCOO - radical is described. That type of dosimeter, ALA/DRS (for diffuse reflection spectrophotometry) is compared, to an alanine dosimeter with EPR evaluation (ALA/EPR for short). In many respects the simple ALA/DRS version, as the alanine-polyethylene composite is superior. The paper shows the importance of the new experimental approach to free radical research in solid state radiation chemistry. (author). 7 refs., 3 figs

  17. Mesoscale simulations of confined Nafion thin films

    Science.gov (United States)

    Vanya, P.; Sharman, J.; Elliott, J. A.

    2017-12-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  18. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  19. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  20. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  1. Flexible thin film magnetoimpedance sensors

    International Nuclear Information System (INIS)

    Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-01-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  2. Nanocomposite thin films for triggerable drug delivery.

    Science.gov (United States)

    Vannozzi, Lorenzo; Iacovacci, Veronica; Menciassi, Arianna; Ricotti, Leonardo

    2018-05-01

    Traditional drug release systems normally rely on a passive delivery of therapeutic compounds, which can be partially programmed, prior to injection or implantation, through variations in the material composition. With this strategy, the drug release kinetics cannot be remotely modified and thus adapted to changing therapeutic needs. To overcome this issue, drug delivery systems able to respond to external stimuli are highly desirable, as they allow a high level of temporal and spatial control over drug release kinetics, in an operator-dependent fashion. Areas covered: On-demand drug delivery systems actually represent a frontier in this field and are attracting an increasing interest at both research and industrial level. Stimuli-responsive thin films, enabled by nanofillers, hold a tremendous potential in the field of triggerable drug delivery systems. The inclusion of responsive elements in homogeneous or heterogeneous thin film-shaped polymeric matrices strengthens and/or adds intriguing properties to conventional (bare) materials in film shape. Expert opinion: This Expert Opinion review aims to discuss the approaches currently pursued to achieve an effective on-demand drug delivery, through nanocomposite thin films. Different triggering mechanisms allowing a fine control on drug delivery are described, together with current challenges and possible future applications in therapy and surgery.

  3. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  4. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  5. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  6. Gravitationally driven drainage of thin films

    Science.gov (United States)

    Naire, Shailesh

    In this thesis we develop theory for an experiment done by Snow and coworkers at Dow Corning that involves a vertically-oriented, thinned polyurethane film with silicone surfactant, draining under gravity. We present the mathematical formulation for a 1+1- and 2+1-dimensional model to study the evolution of a vertically-oriented thin liquid film draining under gravity when there is an insoluble surfactant with finite surface viscosity on its free surface. This formulation has all the ingredients that include: surface tension, gravity, surface viscosity, the Marangoni effect, convective and diffusive surfactant transport; essential to describe the behavior of a vertical draining film with surfactant. We study a hierarchy of mathematical models with increasing complexity starting with the flat film model where gravity balances viscous shear and surface tension is neglected, this is generalized to include surface tension. We further generalize to incorporate variable surface viscosity and more complicated constitutive laws for surface tension as a function of surfactant concentration. Lubrication theory is employed to derive three coupled nonlinear partial differential equations (PDEs) describing the free surface shape, a component of surface velocity and the surfactant transport at leading order. A large surface viscosity limit recovers the tangentially-immobile model; for small surface viscosity, the film is mobile. Transition from a mobile to an immobile film is observed for intermediate values of surface viscosity and Marangoni number. The above models reproduce a number of features observed in experiments, these include film shapes and thinning rates which can be correlated to experiment. The 2+1-dimensional model for simplified surface properties has also been studied. Numerical experiments were performed to understand the stability of the system to perturbations across the film. An instability was seen in the mobile case; this was caused by a competition

  7. Thin films of metal-organic compounds and metal nanoparticle

    Indian Academy of Sciences (India)

    Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications. S Philip Anthony Shatabdi Porel D ... Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which ...

  8. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which form perfectly polar assemblies in their crystalline state are found to organize as uniaxially oriented crystallites in vapor deposited thin films on glass substrate.

  9. Impulsive Stimulated Scattering Spectroscopy of Thin Film and Bulk Ferroelectric Systems.

    Science.gov (United States)

    Dhar, Lisa

    A laser-based ultrasonic technique, impulsive stimulated thermal scattering (ISTS), is used to characterize the acoustic waveguide behavior in a series of silicon -supported and free-standing polyimide bilayer structures. The experimental results demonstrate that multilayer structures are characterizable using ISTS measurements. In addition, simulations of acoustic waveguide behavior in coatings with very thin interfacial layers adjacent to the substrate and in films with continuously changing elastic properties are presented. The results indicate depth-profiling possibilities using ISTS. The same technique is used to evaluate the acoustic wave properties of the piezoelectric film lead zirconium titanate. In this study, numerical results are also presented calculating the electric fields and potentials that accompany the acoustic excitations in this material. Femtosecond impulsive stimulated Raman scattering (ISRS) experiments are performed on the lowest frequency A_1 polariton in the ferroelectric crystal lead titanate. The experimental results coupled with numerical simulations of the polariton behavior focus upon the anharmonic nature of the lattice potential demonstrating that the anharmonicity can be detected in ISRS experiments. An optical technique for performing single-shot pump-probe spectroscopy with femtosecond time resolution is demonstrated. The time-dependent absorption of the laser dyes nile blue, cresyl violet, and ethyl violet is monitored using this technique. The possibility of probing the dynamics of irreversible processes initiated through photoexcitation is discussed. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617 -253-5668; Fax 617-253-1690.).

  10. Mechanical characterization of thin TiO2 films by means of microelectromechanical systems-based cantilevers

    International Nuclear Information System (INIS)

    Adami, A.; Decarli, M.; Bartali, R.; Micheli, V.; Laidani, N.; Lorenzelli, L.

    2010-01-01

    The measurement of mechanical parameters by means of microcantilever structures offers a reliable and accurate alternative to traditional methods, especially when dealing with thin films, which are extensively used in microfabrication technology and nanotechnology. In this work, microelectromechanical systems (MEMS)-based piezoresistive cantilevers were realized and used for the determination of Young's modulus and residual stress of thin titanium dioxide (TiO 2 ) deposited by sputtering from a TiO 2 target using a rf plasma discharge. Films were deposited at different thicknesses, ranging from a few to a hundred nanometers. Dedicated silicon microcantilevers were designed through an optimization of geometrical parameters with the development of analytical as well as numerical models. Young's modulus and residual stress of sputtered TiO 2 films were assessed by using both mechanical characterization based on scanning profilometers and piezoresistive sensing elements integrated in the silicon cantilevers. Results of MEMS-based characterization were combined with the tribological and morphological properties measured by microscratch test and x-ray diffraction analysis.

  11. High Performance Nano-Constituent Buffer Layer Thin Films to Enable Low Cost Integrated On-the-Move Communications Systems

    National Research Council Canada - National Science Library

    Cole, M. W; Nothwang, W. D; Hubbard, C; Ngo, E; Hirsch, S

    2004-01-01

    .... Utilizing a coplanar device design we successfully designed, fabricated, characterized, and optimized a high performance Ta2O5 thin film passive buffer layer on Si substrates, which will allow...

  12. Quantifying clustering in disordered carbon thin films

    International Nuclear Information System (INIS)

    Carey, J.D.

    2006-01-01

    The quantification of disorder and the effects of clustering in the sp 2 phase of amorphous carbon thin films are discussed. The sp 2 phase is described in terms of disordered nanometer-sized conductive sp 2 clusters embedded in a less conductive sp 3 matrix. Quantification of the clustering of the sp 2 phase is estimated from optical as well as from electron and nuclear magnetic resonance methods. Unlike in other disordered group IV thin film semiconductors, we show that care must be exercised in attributing a meaning to the Urbach energy extracted from absorption measurements in the disordered carbon system. The influence of structural disorder, associated with sp 2 clusters of similar size, and topological disorder due to undistorted clusters of different sizes is also discussed. Extensions of this description to other systems are also presented

  13. Organic Thin Films for Photonics Applications

    National Research Council Canada - National Science Library

    Thorner, John

    1999-01-01

    The Organic Thin Films for Photonics Applications Topical Meeting provided an interdisciplinary forum for the presentation and discussion of new and previously unpublished results on advanced organic...

  14. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  15. Progress in thin film techniques

    International Nuclear Information System (INIS)

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  16. Thin film solar energy collector

    Science.gov (United States)

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  17. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  18. Mesoscale simulations of confined Nafion thin films

    OpenAIRE

    Vanya, Peter; Sharman, Jonathan; Elliott, James A.

    2017-01-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane-electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains with carbon and quartz as confining materials for a wide range of operational water contents and...

  19. Mesoscale simulations of confined Nafion thin films

    OpenAIRE

    Vanya, Peter; Sharman, J; Elliott, James Arthur

    2017-01-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains with carbon and quartz as confining materials for a wide range of operational water contents and...

  20. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Science.gov (United States)

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  1. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  2. Pulse electrodeposition of Prussian Blue thin films

    International Nuclear Information System (INIS)

    Najafisayar, P.; Bahrololoom, M.E.

    2013-01-01

    The effects of pulse electrodeposition parameters like peak current density and frequency on the electrochemical properties of Prussian Blue thin films were investigated. Electrochemical Impedance Spectroscopy, Cyclic Voltammetry and Chronoamperometry tests were carried out on Prussian Blue thin films which were pulse electrodeposited on Indium Tin Oxide coated glass substrates. The results showed that increase in the peak current densities and using higher pulsating frequencies during electrodeposition decreases the charge transfer resistance of the thin films while the diffusion coefficient of electroactive species in the films is increased as a consequence of using the same pulsating parameters. In addition, pulse electrodeposition technique does not alter deposition mechanism and morphology of the Prussian Blue thin films. - Highlights: • Prussian Blue thin films were pulse electrodeposited onto the ITO coated glass. • Pulse current condition affected thin films' electrochemical properties. • High pulsating current and frequency lower thin films' charge transfer resistance. • High pulsating current and frequency increase diffusion coefficient in thin films

  3. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  4. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  5. Thin film system with integrated load and temperature sensors for the technical application in deep drawing process

    Science.gov (United States)

    Biehl, Saskia; Paetsch, Nancy; Meyer-Kornblum, Eike

    2017-05-01

    In these days industry 4.0 resounded throughout the land and means the fourth industrial revolution. The industry has to tackle the task of a flexible and customer-oriented production. Therefor the need of sensor systems for the measurement of temperature and load, the two most important categories in production, is rising. For getting the real specification during the production process the integration of sensor elements in high load regions of machinery is very important. Thus wear resistant thin film sensor systems directly applied onto the surface of plant components are in development. These multilayer systems combine excellent wear resistance with sensory behaviour. The sensor data will lead to a deeper process understanding, to optimization of simulation tools, to reduction of rejects and to an improvement of flexibility in production.

  6. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    International Nuclear Information System (INIS)

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-01-01

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

  7. Permalloy Thin-film Magnetic Sensors

    NARCIS (Netherlands)

    Groenland, J.P.J.; Eijkel, C.J.M.; Fluitman, J.H.J.; de Ridder, R.M.

    1992-01-01

    An introduction to the theory of the anisotropic magnetoresistance effect in ferromagnetic thin films is given, ending in a treatment of the minimalization of the free energy which is the result of the intrinsic and extrinsic anisotropies of the thin-film structure. The anisotropic magnetoresistance

  8. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposi- tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous me-.

  9. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 29; Issue 2. Characterization of nanocrystalline ... Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, ...

  10. X-ray analysis of spintronic semiconductor and half metal thin film systems; Roentgenstrukturuntersuchungen an spintronischen Halbleiter- und Halbmetall-Duennschichtsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Stahl, Andreas

    2010-07-01

    In this work the structural properties of spintronic semiconductor and halfmetalic thin-film systems were investigated. The layer thicknesses and interface roughnesses of the multi-layer systems were estimated by X-ray reflectivity measurements. The fits were performed using the software Fewlay which uses the Parratt formalism to calculate the reflectivities. The relaxation of the films was analyzed by reciprocal space mapping on preferably highly indexed Bragg reflexes. (orig.)

  11. Laser thermoreflectance for semiconductor thin films metrology

    Science.gov (United States)

    Gailly, P.; Hastanin, J.; Duterte, C.; Hernandez, Y.; Lecourt, J.-B.; Kupisiewicz, A.; Martin, P.-E.; Fleury-Frenette, K.

    2012-06-01

    We present a thermoreflectance-based metrology concept applied to compound semiconductor thin films off-line characterization in the solar cells scribing process. The presented thermoreflectance setup has been used to evaluate the thermal diffusivity of thin CdTe films and to measure eventual changes in the thermal properties of 5 μm CdTe films ablated by nano and picosecond laser pulses. The temperature response of the CdTe thin film to the nanosecond heating pulse has been numerically investigated using the finite-difference time-domain (FDTD) method. The computational and experimental results have been compared.

  12. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  13. Principles of electron backscattering by solids and thin films

    International Nuclear Information System (INIS)

    Niedrig, H.

    1977-01-01

    The parameters concerning the electron backscattering from thin films and solids (atomic scattering cross-section, atomic number, single/multiple scattering, film thickness of self-supporting films and of surface films on bulk substrates, scattering angular distribution, angle of incidence, diffraction effects) are described. Their influence on some important contrast mechanisms in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, orientation contrast) is discussed. The main backscattering electron detection systems are briefly described. (orig.) [de

  14. Self-organized structures in soft confined thin films

    Indian Academy of Sciences (India)

    organized creation of mesostructures in soft materials like thin films of polymeric liquids and elas- tic solids. These very small scale, highly confined systems are inherently unstable and thus self-organize into ordered structures which can be ...

  15. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  16. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  17. Could We Realize the Fully Flexible System by Real-Time Computing with Thin-Film Transistors?

    Directory of Open Access Journals (Sweden)

    Qin Li

    2017-11-01

    Full Text Available Flexible electronic devices, such as the typical thin-film transistors, are widely adopted in the area of sensors, displayers, wearable equipment, and such large-area applications, for their features of bending and stretching; additionally, in some applications of lower-resolution data converters recently, where a trend appears that implementing more parts of system with flexible devices to realize the fully flexible system. Nevertheless, relatively fewer works on the computation parts with flexible electronic devices are reported, due to their poor carrier mobility, which blocks the way to realize the fully flexible systems with uniform manufacturing process. In this paper, a novel circuit architecture for image processing accelerator using Oxide Thin-film transistor (TFT, which could realize real-time image pre-processing and classification in the analog domain, is proposed, where the performance and fault-tolerance of image signal processing is exploited. All of the computation is done in the analog signal domain and no clock signal is needed. Therefore, certain weaknesses of flexible electronic devices, such as low carrier mobility, could be remedied dramatically. In this paper, Simulations based on Oxide TFT device model have demonstrated that the flexible computing parts could perform 5 × 5 Gaussian convolution operation at a speed of 3.3 MOPS/s with the energy efficiency of 1.83 TOPS/J, and realize image classification at a speed of 10 k fps, with the energy efficiency of 5.25 GOPS/J, which means that the potential applications to realize real-time computing parts of complex algorithms with flexible electronic devices, as well as the future fully flexible systems containing sensors, data converters, energy suppliers, and real-time signal processing modules, all with flexible devices.

  18. Method of producing thin cellulose nitrate film

    International Nuclear Information System (INIS)

    Lupica, S.B.

    1975-01-01

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent

  19. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical ... capability of the nanoparticle-embedded polymer film is demonstrated. Keywords. Polar crystal; uniaxial ... systems promising candidates for a wide range of electronic, magnetic and optical applications. However ...

  20. Electron field emission from amorphous semiconductor thin films

    International Nuclear Information System (INIS)

    Forrest, R.D.

    2001-01-01

    The flat panel display market requires new and improved technologies in order to keep up with the requirements of modem lifestyles. Electron field emission from thin film amorphous semiconductors is potentially such a technology. For this technology to become viable, improvements in the field emitting properties of these materials must be achieved. To this end, it is important that a better understanding of the emission mechanisms responsible is attained. Amorphous carbon thin films, amorphous silicon thin films and other materials have been deposited, in-house and externally. These materials have been characterised using ellipsometry, profilometry, optical absorption, scanning electron microscopy, atomic force microscopy, electron paramagnetic resonance and Rutherford backscattering spectroscopy. An experimental system for evaluating the electron field emitting performance of thin films has been developed. In the process of developing thin film cathodes in this study, it has been possible to add a new and potentially more useful semiconductor, namely amorphous silicon, to the family of cold cathode emitters. Extensive experimental field emission data from amorphous carbon thin films, amorphous silicon thin films and other materials has been gathered. This data has been used to determine the mechanisms responsible for the observed electron emission. Preliminary computer simulations using appropriate values for the different material properties have exhibited emission mechanisms similar to those identified by experiment. (author)

  1. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  2. Development of Flexible Electrochromic Device with Thin-Film Configuration

    Science.gov (United States)

    Yoshimura, Hideo; Sakaguchi, Tomonori; Koshida, Nobuyoshi

    2007-04-01

    As we reported previously, the carrier accumulation mechanism is very useful for obtaining a quick-response electrochromic (EC) device with the inorganic-thin-film configuration. To confirm the availability of this concept for flexible substrates, the EC device has been fabricated on a polymeric film. The device is composed of a top semitransparent electrode, an electrolytic thin Ta2O5 film, a very thin SiO2 film, a thin amorphous WO3 film, and an indium-tin-oxide-coated poly(ethylene terephthalate) (PET) film. The experimental results show that the insertion of thin SiO2 film significantly accelerates the EC coloration as in the case of glass substrates. In accordance with cyclic voltammogram analyses, the enhanced EC kinetics is associated with an increased EC efficiency owing to the carrier accumulation effect of thin SiO2 film. The present result is potentially useful for development of flexible paper-like EC display devices and simple optical control systems.

  3. INFLUENCE OF IMPULSE PHOTON ANNEALING ON STRUCTURE AND PHASE COMPOSITION OF THIN-FILMED SYSTEMS ON BASIS OF SILICON AND TRANSITION METALS

    Directory of Open Access Journals (Sweden)

    M. I. Markevich

    2013-01-01

    Full Text Available Methods of transmission electronic microscopy, electron diffraction, energy dispersive X-ray microanalysis have been used for investigations of element composition, regularities in structural and phase transmissions occurring in thin-filmed systems Si–Fe–Si and TiN–Ti–Si while using impulse photon annealing in terms of radiation energy density. Optimum parameters of impulse photon annealing for formation of β-FeSi2 and C54-TiSi2 thin films on silicon have been determined in the paper.

  4. Realization of Artificial Ice Systems for Magnetic Vortices in a Superconducting MoGe Thin Film with Patterned Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Latimer, M. L.; Berdiyorov, G. R.; Xiao, Z. L.; Peeters, F. M.; Kwok, W. K.

    2013-08-05

    We report an anomalous matching effect in MoGe thin films containing pairs of circular holes arranged in such a way that four of those pairs meet at each vertex point of a square lattice. A remarkably pronounced fractional matching was observed in the magnetic field dependences of both the resistance and the critical current. At the half matching field the critical current can be even higher than that at zero field. This has never been observed before for vortices in superconductors with pinning arrays. Numerical simulations within the nonlinear Ginzburg-Landau theory reveal a square vortex ice configuration in the ground state at the half matching field and demonstrate similar characteristic features in the field dependence of the critical current, confirming the experimental realization of an artificial ice system for vortices for the first time.

  5. Nitrided FeB amorphous thin films for magneto mechanical systems

    International Nuclear Information System (INIS)

    Fernandez-Martinez, I.; Martin-Gonzalez, M.S.; Gonzalez-Arrabal, R.; Alvarez-Sanchez, R.; Briones, F.; Costa-Kraemer, J.L.

    2008-01-01

    The structural, magnetic and magnetoelastic properties of Fe-B-N amorphous films, sputtered from a Fe 80 B 20 target, in a mixture of argon and nitrogen gas, are studied for different nitrogen partial pressures. Nitrogen incorporates into the film preserving the amorphous structure, and modifying magnetic properties. The amount of nitrogen that incorporates into the amorphous structure is found to scale linearly with the nitrogen partial pressure during film growth. The structure, magnetization, field evolution, magnetic anisotropy and magnetostrictive behaviour are determined for films with different nitrogen content. An ∼20% increase of both the saturation magnetization and the magnetostriction constant values is found for moderate (∼8%) nitrogen content when compared to those for pure Fe 80 B 20 amorphous films. These improved properties, together with the still low coercivity of the amorphous films offer great potential for their use in magnetostrictive micro and nano magneto mechanical actuator devices

  6. Nitrided FeB amorphous thin films for magneto mechanical systems

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez-Martinez, I.; Martin-Gonzalez, M.S. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain); Gonzalez-Arrabal, R. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain); Centro de Microanalisis de Materiales de Materiales, Universidad Autonoma de Madrid, Cantoblanco 28049, Madrid (Spain); Alvarez-Sanchez, R.; Briones, F. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain); Costa-Kraemer, J.L. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain)], E-mail: kramer@imm.cnm.csic.es

    2008-01-15

    The structural, magnetic and magnetoelastic properties of Fe-B-N amorphous films, sputtered from a Fe{sub 80}B{sub 20} target, in a mixture of argon and nitrogen gas, are studied for different nitrogen partial pressures. Nitrogen incorporates into the film preserving the amorphous structure, and modifying magnetic properties. The amount of nitrogen that incorporates into the amorphous structure is found to scale linearly with the nitrogen partial pressure during film growth. The structure, magnetization, field evolution, magnetic anisotropy and magnetostrictive behaviour are determined for films with different nitrogen content. An {approx}20% increase of both the saturation magnetization and the magnetostriction constant values is found for moderate ({approx}8%) nitrogen content when compared to those for pure Fe{sub 80}B{sub 20} amorphous films. These improved properties, together with the still low coercivity of the amorphous films offer great potential for their use in magnetostrictive micro and nano magneto mechanical actuator devices.

  7. Ab initio theory of temperature dependence of magnetic anisotropy in layered systems: Applications to thin Co films on Cu(100)

    Science.gov (United States)

    Buruzs, Á.; Weinberger, P.; Szunyogh, L.; Udvardi, L.; Chleboun, P. I.; Fischer, A. M.; Staunton, J. B.

    2007-08-01

    In this paper we present an extension of the relativistic disordered local moments (RDLM) scheme to layered systems in order to perform ab initio calculations of the temperature-dependent magnetic anisotropy energy of magnetic surfaces, interfaces, or films. As implemented within the relativistic spin-polarized screened Korringa-Kohn-Rostoker method, we apply this scheme to thin Con/Cu(100) films and observe a temperature dependence of the magnetic anisotropy energy (MAE) that significantly differs from that of the bulk systems studied so far. In addition to the overall agreement of our results with experiments in showing an in-plane magnetization for almost all layer thicknesses and temperatures under consideration, our calculations also systematically predict a temperature-induced reverse (in-plane to out-of-plane) spin reorientation. In order to explain this unexpected feature we fit the parameters of a classical Heisenberg model solved within the mean-field approach to the MAE obtained from the RDLM calculations, and conclude that the spin reorientation is driven by a competition of exchange and single-site anisotropies.

  8. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  9. Optical constant of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

    2017-01-01

    The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability of the dev......The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... predicts optical losses based on structure of the gold films....

  10. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  11. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c...... or less; and e. repeating steps b. and c. a total of N times, such that N repeating pairs of layers (A/B) are built up, wherein N is 1 or more. The invention also provides a thin film multi-layered heterostructure as such, and the combination of a thin film multi-layered heterostructure and a substrate...

  12. Macro stress mapping on thin film buckling

    International Nuclear Information System (INIS)

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-01-01

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling

  13. Study of zinc oxide thin film characteristics

    OpenAIRE

    Johari Shazlina; Muhammad Nazalea Yazmin; Zakaria Mohd Rosydi

    2017-01-01

    This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influe...

  14. Simple flash evaporator for making thin films of compounds

    Energy Technology Data Exchange (ETDEWEB)

    Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

    2010-07-15

    A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

  15. Optical thin-film technology: past, present, future

    Science.gov (United States)

    Strickland, William P.

    1990-12-01

    The evolution of the vacuum coating industry is reviewed. Vacuum science progressed slowly until the late nineteenth century due to an incomplete understanding of vacuum and lack of applications. Edison's invention of the light bulb launched the vacuum industry and increased developmentof improved vacuum systems. The thin film optical coating industry arose from the needs of the German and U.S. military efforts during World War II. The author presents his experience in thin film coating from 1939 to the present.

  16. High density nonmagnetic cobalt in thin films

    OpenAIRE

    Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Dev, B. N.

    2017-01-01

    Recently high density (HD) nonmagnetic (NM) cobalt has been discovered in a cobalt thin film, grown on Si(111). This cobalt film had a natural cobalt oxide at the top. The oxide layer forms when the film is taken out of the electron-beam deposition chamber and exposed to air. Thin HD NM cobalt layers were found near the cobalt/silicon and the cobalt-oxide/cobalt interfaces, while the thicker mid-depth region of the film was hcp cobalt with normal density and normal magnetic moment. If an ultr...

  17. Infrared control coating of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  18. Design of Rose Bengal/FTO optical thin film system as a novel nonlinear media for infrared blocking windows

    Science.gov (United States)

    El-Bashir, S. M.; Yahia, I. S.; Binhussain, M. A.; AlSalhi, M. S.

    Rose Bengal (RB) is a new organic semiconductor with the highly stable layer, was deposited on highly cleaned conductive glass substrate known as (FTO glass) with different thickness in the range from 80 to 292 nm. XRD showed an entirely amorphous structure of the studied film thicknesses. The observed peaks are the indexed peaks for FTO layer. Spectrophotometric data as transmittance, reflectance, and absorbance were used for the analysis the optical constant of RB/FTO optical thin film system. Refractive index was calculated using Fresnel's equation with the aid of reflectance and absorption index. The dielectric constant, dielectric loss and dissipation factor were discussed and analyzed according to the applied optical theories. Nonlinear parameters such as third order nonlinear optical susceptibility and the nonlinear refractive index were calculated based on the linear refractive index of the applications of this material in nonlinear media. The results showed that Rose Bengal is a proving material for wide scale optoelectronic applications such as infrared blocking windows.

  19. Design of Rose Bengal/FTO optical thin film system as a novel nonlinear media for infrared blocking windows

    Directory of Open Access Journals (Sweden)

    S.M. El-Bashir

    Full Text Available Rose Bengal (RB is a new organic semiconductor with the highly stable layer, was deposited on highly cleaned conductive glass substrate known as (FTO glass with different thickness in the range from 80 to 292 nm. XRD showed an entirely amorphous structure of the studied film thicknesses. The observed peaks are the indexed peaks for FTO layer. Spectrophotometric data as transmittance, reflectance, and absorbance were used for the analysis the optical constant of RB/FTO optical thin film system. Refractive index was calculated using Fresnel’s equation with the aid of reflectance and absorption index. The dielectric constant, dielectric loss and dissipation factor were discussed and analyzed according to the applied optical theories. Nonlinear parameters such as third order nonlinear optical susceptibility and the nonlinear refractive index were calculated based on the linear refractive index of the applications of this material in nonlinear media. The results showed that Rose Bengal is a proving material for wide scale optoelectronic applications such as infrared blocking windows. Keywords: Rose Bengal, Dielectric parameters, Linear/nonlinear optics, Dye/FTO, IR blocking windows

  20. Thermal conductivity model for nanoporous thin films

    Science.gov (United States)

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  1. Thin film production method and apparatus

    Science.gov (United States)

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  2. Highly stretchable wrinkled gold thin film wires.

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D; Khine, Michelle

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  3. Sub-harmonic excitation of a planar magneto-mechanical system by means of giant magnetostrictive thin films

    International Nuclear Information System (INIS)

    Tiercelin, N.; Preobrazhensky, V.; Pernod, P.; Le Gall, H.; Ben Youssef, J.

    2000-01-01

    In the present paper, we report the first results concerning the studies on non-linear actuation of cantilevers using giant magneto-strictive thin films in the vicinity of the spin reorientation transition (SRT). Bimorph centimetre beams (24x5 mm 2 ) were designed using 160 μm thick glass, and 0.4 μm thick multilayer TbFe/Fe films deposited via RF sputtering, using several sputtering conditions. Magnetic characteristics of the thin films show the existence of a SRT. Dynamic magneto-elastic excitations were studied experimentally on the few eigen resonance modes of the cantilevers. Sub-harmonic excitation at half or one third of the frequency of an eigen resonance mode has been achieved near the SRT and the efficiency is as good as for eigen frequency excitation. Comparison between theory and experimental results is discussed

  4. Modelling and Laboratory Studies on the Adhesion Fatigue Performance for Thin-Film Asphalt and Aggregate System

    Directory of Open Access Journals (Sweden)

    Dongsheng Wang

    2014-01-01

    Full Text Available Adhesion between asphalt and aggregate plays an important role in the performance of asphalt mixtures. A low-frequency adhesion fatigue test was proposed in this paper to study the effect of environment on the asphalt-aggregate adhesion system. The stress-based fatigue model had been utilized to describe the fatigue behavior of thin-film asphalt and aggregate system. The factors influencing the adhesion fatigue performance were also investigated. Experiment results show that asphalt has more important effect on the adhesion performance comparing with aggregate. Basalt, which is regarded as hydrophobic aggregates with low silica content, has better adhesion performance to asphalt binder when compared with granite. The effects of aging on the adhesion fatigue performance are different for PG64-22 and rubber asphalt. Long-term aging is found to reduce the adhesion fatigue lives for rubber asphalt and aggregate system, while the effect of long-term aging for aggregate and PG64-22 binder system is positive. Generally the increased stress amplitude and test temperature could induce greater damage and lead to less fatigue lives for adhesion test system.

  5. Thin films as an emerging platform for drug delivery

    Directory of Open Access Journals (Sweden)

    Sandeep Karki

    2016-10-01

    Full Text Available Pharmaceutical scientists throughout the world are trying to explore thin films as a novel drug delivery tool. Thin films have been identified as an alternative approach to conventional dosage forms. The thin films are considered to be convenient to swallow, self-administrable, and fast dissolving dosage form, all of which make it as a versatile platform for drug delivery. This delivery system has been used for both systemic and local action via several routes such as oral, buccal, sublingual, ocular, and transdermal routes. The design of efficient thin films requires a comprehensive knowledge of the pharmacological and pharmaceutical properties of drugs and polymers along with an appropriate selection of manufacturing processes. Therefore, the aim of this review is to provide an overview of the critical factors affecting the formulation of thin films, including the physico-chemical properties of polymers and drugs, anatomical and physiological constraints, as well as the characterization methods and quality specifications to circumvent the difficulties associated with formulation design. It also highlights the recent trends and perspectives to develop thin film products by various companies.

  6. Laser processing for thin-film photovoltaics

    Science.gov (United States)

    Compaan, Alvin D.

    1995-04-01

    Over the past decade major advances have occurred in the field of thin- film photovoltaics (PV) with many of them a direct consequence of the application of laser processing. Improved cell efficiencies have been achieved in crystalline and polycrystalline Si, in hydrogenated amorphous silicon, and in two polycrystalline thin-film materials. The use of lasers in photovoltaics includes laser hole drilling for emitter wrap-through, laser trenching for buried bus lines, and laser texturing of crystalline and polycrystalline Si cells. In thin-film devices, laser scribing is gaining increased importance for module interconnects. Pulsed laser recrystallization of boron-doped hydrogenated amorphous silicon is used to form highly conductive p-layers in p-i-n amorphous silicon cells and in thin-film transistors. Optical beam melting appears to be an attractive method for forming metal semiconductor alloys for contact formation. Finally, pulsed lasers are used for deposition of the entire semiconductor absorber layer in two types of polycrystalline thin-film cells-those based on copper indium diselenide and those based on cadmium telluride. In our lab we have prepared and studied heavily doped polycrystalline silicon thin films and also have used laser physical vapor deposition (LPVD) to prepare 'all-LPVD' CdS/CdTe solar cells on glass with efficiencies tested at NREL at 10.5%. LPVD is highly flexible and ideally suited for prototyping PV cells using ternary or quaternary alloys and for exploring new dopant combinations.

  7. Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

    International Nuclear Information System (INIS)

    Bernard, F; Basrour, S; Casset, F; Danel, J S; Chappaz, C

    2016-01-01

    This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm 2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm 2 . Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system. (paper)

  8. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  9. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications)

    Science.gov (United States)

    Vedam, K.; Das, M. B.; Krishnaswamy, S. V.

    1980-02-01

    Emphasis during the third quarter of the program was on the improvement of the quality of sputtered films, their characterization and use in the fabrication of Schottky barrier type diodes and solar cell structures. Films prepared under different conditions and on different substrates were examined showing modular growths under certain conditions. I-V, C-V, and photovoltaic characteristics were measured on numerous samples based on n- and p-type films on Ni substrates having top metallization of either evaporated Au and Al. The n-type samples showed up to 200 mV V/sub oc/and small short-circuit currents. The characteristics observed are indicative of the presence of interfacial layer and surface states. Surface state's capacitance were measured on p-type samples metalized with Au.

  10. A thin film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, C.J.M.; Wieberdink, Johan W.; Fluitman, J.H.J.; Popma, T.J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  11. Large grain gallium arsenide thin films

    Science.gov (United States)

    Chu, S. S.; Chu, T. L.; Firouzi, H.; Han, Y. X.; Chen, W. J.; Wang, Q. H.

    Polycrystalline gallium arsenide films deposited on tungsten/graphite substrates have been used for the fabrication of thin film solar cells. Gallium arsenide films deposited on foreign substrates of 10 microns or less thickness exhibit, in most cases, pronounced shunting effects due to grain boundaries. MOS solar cells of 9 sq cm area with an AM1 efficiency of 8.5 percent and p(+)/n/n(+) homojunction solar cells of 1 sq cm area with an AM1 efficiency of 8.8 percent have been prepared. However, in order to further improve the conversion efficiency before the development of effective passivation techniques, gallium arsenide films with large and uniform grain structure are necessary. The large grain gallium arsenide films have been prepared by using (1) the arsine treatment of a thin layer of molten gallium on the substrate surface and (2) the recrystallized germanium films on tungsten/graphite as substrates.

  12. Magnetic hysteresis measurements of thin films under isotropic stress.

    Science.gov (United States)

    Holland, Patrick; Dubey, Archana; Geerts, Wilhelmus

    2000-10-01

    Nowadays, ferromagnetic thin films are widely applied in devices for information technology (credit cards, video recorder tapes, floppies, hard disks) and sensors (air bags, anti-breaking systems, navigation systems). Thus, with the increase in the use of magnetic media continued investigation of magnetic properties of materials is necessary to help in determining the useful properties of materials for new or improved applications. We are currently interested in studying the effect of applied external stress on Kerr hysteresis curves of thin magnetic films. The Ni and NiFe films were grown using DC magnetron sputtering with Ar as the sputter gas (pAr=4 mTorr; Tsub=55-190 C). Seed and cap layers of Ti were used on all films for adhesion and oxidation protection, respectively. A brass membrane pressure cell was designed to apply in-plane isotropic stress to thin films. In this pressure cell, gas pressure is used to deform a flexible substrate onto which a thin magnetic film has been sputtered. The curvature of the samples could be controlled by changing the gas pressure to the cell. Magneto-Optical in-plane hysteresis curves at different values of strain were measured. The results obtained show that the stress sensitivity is dependent on the film thickness. For the 500nm NiFe films, the coercivity strongly decreased as a function of the applied stress.

  13. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  14. Electrochemical fabrication of nanoporous polypyrrole thin films

    International Nuclear Information System (INIS)

    Li Mei; Yuan Jinying; Shi Gaoquan

    2008-01-01

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)

  15. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  16. Polymer surfaces, interfaces and thin films

    International Nuclear Information System (INIS)

    Stamm, M.

    1996-01-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs

  17. Restructuring in block copolymer thin films

    DEFF Research Database (Denmark)

    Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

    2017-01-01

    Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

  18. Spin configuration in a frustrated ferromagnetic/antiferromagnetic thin-film system

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, T K [Faculty of Science, Gakushuin University, 171-8588 Mejiro, Tokyo (Japan); MartInez, E [Fachbereich Physik, Universitaet Osnabrueck, D-49069 Osnabrueck (Germany); Vega, A [Departamento de Fisica Teorica, Atomica y Optica, Universidad de Valladolid, 47011 Valladolid (Spain); Robles, R [Department of Physics, Uppsala University, SE-75121 (Sweden); Stoeffler, D [Institut de Physique et Chimie des Materiaux de Strasbourg (UMR C7504 CNRS-ULP), Strasbourg (France); Parga, A L Vazquez de [Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid, Cantoblanco 28049, Madrid (Spain); Mizoguchi, T [Faculty of Science, Gakushuin University, 171-8588 Mejiro, Tokyo (Japan); Kempen, H van [Institute for Molecules and Materials, Radboud University, Toernooiveld 1, 6525 ED Nijmegen (Netherlands)

    2007-06-13

    We have studied the magnetic configuration in ultrathin antiferromagnetic Mn films grown around monoatomic steps on an Fe(001) surface by spin-polarized scanning tunnelling microscopy/spectroscopy and ab initio-parameterized self-consistent real-space tight-binding calculations in which the spin quantization axis is independent for each site, thus allowing noncollinear magnetism. Mn grown on Fe(001) presents a layered antiferromagnetic structure. In the regions where the Mn films overgrows Fe steps the magnetization of the surface layer is reversed across the steps. Around these defects a frustration of the antiferromagnetic order occurs. Due to the weakened magnetic coupling at the central Mn layers, the amount of frustration is smaller than in Cr, and the width of the wall induced by the step does not change with the thickness, at least for coverages up to seven monolayers.

  19. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    International Nuclear Information System (INIS)

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  20. Matrix assisted pulsed laser evaporation of pullulan tailor-made biomaterial thin films for controlled drug delivery systems

    Czech Academy of Sciences Publication Activity Database

    Cristescu, R.; Jelínek, Miroslav; Kocourek, Tomáš; Axente, E.; Grigorescu, S.; Moldovan, A.; Mihaiescu, D.E.; Albulescu, M.; Buruiana, T.; Dybal, Jiří; Stamatin, I.; Mihailescu, I. N.; Chrisey, D.B.

    2007-01-01

    Roč. 59, - (2007), s. 144-149 ISSN 1742-6588 R&D Projects: GA AV ČR IAA1010110 Grant - others:CTU(CZ) 6640770030; CERES(RO) 4-178/15.11.2004 Institutional research plan: CEZ:AV0Z10100522; CEZ:AV0Z40500505 Keywords : pulluan * thin films * MAPLE Subject RIV: BM - Solid Matter Physics ; Magnetism

  1. Constructing a large variety of Dirac-cone materials in the Bi(1-x)Sb(x) thin film system.

    Science.gov (United States)

    Tang, Shuang; Dresselhaus, Mildred S

    2012-12-21

    We theoretically predict that a large variety of Dirac-cone materials can be constructed in Bi(1-x)Sb(x) thin films and we here show how to construct single-, bi- and tri-Dirac-cone materials with various amounts of wave vector anisotropy. These different types of Dirac cones can be of special interest to electronic device design, quantum electrodynamics and other fields.

  2. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  3. Critical behavior of ferromagnetic Ising thin films

    International Nuclear Information System (INIS)

    Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

  4. Dynamics of Polymer Thin Film Mixtures

    Science.gov (United States)

    Besancon, Brian M.; Green, Peter F.; Soles, Christopher L.

    2006-03-01

    We examined the influence of film thickness and composition on the glass transition temperature (Tg) and mean square atomic displacements (MSD) of thin film mixtures of deuterated polystyrene (dPS) and tetramethyl bisphenol-A polycarbonate (TMPC) on Si/SiOx substrates using incoherent elastic neutron scattering (ICNS). The onset of dissipative motions, such as those associated with the glass transition and sub-Tg relaxations, are manifested as ``kinks'' in the curve of elastic intensity (or MSD) versus temperature. From the relevant kinks, the Tg was determined as a function of composition and of film thickness. The dependence of the Tg on film thickness exhibited qualitatively similar trends, at a given composition, as determined by the ICNS and ellipsometry measurements. However, with increasing PS content, the values of Tg measured by INS were consistently larger then those measured by ellipsometry. These results are examined in light of existing models on the thin film glass transition and component blend dynamics.

  5. Scanning Angle Raman spectroscopy in polymer thin film characterization

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Vy H.T. [Iowa State Univ., Ames, IA (United States)

    2015-12-19

    The focus of this thesis is the application of Raman spectroscopy for the characterization of thin polymer films. Chapter 1 provides background information and motivation, including the fundamentals of Raman spectroscopy for chemical analysis, scanning angle Raman scattering and scanning angle Raman scattering for applications in thin polymer film characterization. Chapter 2 represents a published manuscript that focuses on the application of scanning angle Raman spectroscopy for the analysis of submicron thin films with a description of methodology for measuring the film thickness and location of an interface between two polymer layers. Chapter 3 provides an outlook and future directions for the work outlined in this thesis. Appendix A, contains a published manuscript that outlines the use of Raman spectroscopy to aid in the synthesis of heterogeneous catalytic systems. Appendix B and C contain published manuscripts that set a foundation for the work presented in Chapter 2.

  6. Thin film encapsulation for flexible AM-OLED: a review

    Science.gov (United States)

    Park, Jin-Seong; Chae, Heeyeop; Chung, Ho Kyoon; In Lee, Sang

    2011-03-01

    Flexible organic light emitting diode (OLED) will be the ultimate display technology to customers and industries in the near future but the challenges are still being unveiled one by one. Thin-film encapsulation (TFE) technology is the most demanding requirement to prevent water and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This work provides a review of promising thin-film barrier technologies as well as the basic gas diffusion background. Topics include the significance of the device structure, permeation rate measurement, proposed permeation mechanism, and thin-film deposition technologies (Vitex system and atomic layer deposition (ALD)/molecular layer deposition (MLD)) for effective barrier films.

  7. Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substituted Bi-system

    Science.gov (United States)

    Adachi, H.; Hayashi, S.; Setsune, K.; Kohiki, S.; Ichikawa, Y.; Wasa, K.

    1990-01-01

    Characteristics of the electron-doped-type Nd(2-x)Ce(x)CuO4 systems and substituted Bi2(Sr,Ln)3Cu2Oy system were systematically studied using the high quality thin-film samples. The Nd(2-x)Ce(x)CuO4 thin films with various Ce concentrations, x, were prepared by RF magnetron sputtering on SrTiO3 heated at around 500 C. After subsequent annealing at 1100 C in air, the films showed the c-axis orientation normal to the substrates. By means of the reducing treatment (annealing in a vacuum), superconductivity was induced for the films with 0.14 is less than or equal to x is less than or equal to 0.18. The superconductivity and transport properties of the films were strongly affected by the reducing treatment. The x = 0.15 film exhibited a sharp superconducting transition with zero resistivity at 22 K, in consistent with the diamagnetic properties. The resistivity of the films was fairly low with metallic characteristics, and the sight of the Hall coefficient was negative in the normal state. On the other hand, the normal-state optical measurements showed that the undoped Nd2CuO4 is a semiconductor with a charge transfer gap of 1.3 eV, and that, when Ce ions were doped, a plasma reflection due to the free-carriers came to be seen with the plasma frequency of 1.07 eV for 0.14 is less than or equal to x is less than or equal to 0.18. Moreover, x ray photoemission study revealed that the Cu valence of the film decreased for 2(+) for x = 0 to 1(+) for x = 0.15. These physical properties are in contrast with those of hole-doped-type cuprate superconductors. Bi2(Sr,Ln)3Cu2Oy thin films were also prepared on MgO substrates heated at 600 to 700 C by similar methods. It was found that the growth conditions for Bi-systems with two CuO2 planes were different for each composition and species of lanthanoid in the films. Moreover, preparation of Bi-system with three CuO2 planes was very difficult when lanthanoid atoms were doped in the system. Their electric transport properties and x

  8. Thin Films in the Photovoltaic Industry

    International Nuclear Information System (INIS)

    Jaeger-Waldau, A.

    2008-03-01

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  9. Laser scribing of polycrystalline thin films

    Science.gov (United States)

    Compaan, A. D.; Matulionis, I.; Nakade, S.

    2000-07-01

    We have investigated the use of several different types of lasers for scribing of the polycrystalline materials used for thin-film solar cells: CdTe, CuInGaSe 2 (CIGS), ZnO, SnO 2, Mo, Al, and Au. The lasers included four different neodymium-yttrium-aluminum garnet (Nd:YAG) (both 1064 and 532 nm wavelengths), a Cu vapor (511/578 nm), an XeCl excimer (308 nm), and a KrF excimer (248 nm). Pulse durations ranged from ˜0.1 to ˜250 ns. We found that the fundamental and frequency-doubled wavelengths of the Nd:YAG systems work well for almost all of the above materials except for the transparent conductor ZnO. The diode-laser-pumped Nd:YAG was particularly convenient to use. For ZnO the uv wavelengths of the two excimer lasers produced good results. Pulse duration was found generally not to be critical except for the case of CIGS on Mo where longer pulse durations (≥250 ns) are advantageous. The frequently observed problem of ridge formation along the edges of scribe lines in the semiconductor films can be eliminated by control of intensity gradients at the film through adjustment of the focus conditions.

  10. Superconducting fluctuations in molybdenum nitride thin films

    Science.gov (United States)

    Baskaran, R.; Thanikai Arasu, A. V.; Amaladass, E. P.; Vaidhyanathan, L. S.; Baisnab, D. K.

    2018-02-01

    MoN thin films have been deposited using reactive sputtering. The change in resistance near superconducting transition temperature at various magnetic fields has been analyzed based on superconducting fluctuations in the system. The Aslamazov and Larkin scaling theory has been utilized to analyze the conductance change. The results indicate that most of the measurements show two dimensional (2D) nature and exhibit scaling behavior at lower magnetic fields (7T). We have also analyzed our data based on the model in which there is no explicit dependence of Tc. These analyses also substantiate a crossover from a 2D nature to a 3D at larger fields. Analysis using lowest Landau level scaling theory for a 2D system exhibit scaling behavior and substantiate our observations. The broadening at low resistance part has been explained based on thermally activated flux flow model and show universal behavior. The dependence of Uo on magnetic field indicates both single and collective vortex behavior.

  11. Oxide-based thin film transistors for flexible electronics

    Science.gov (United States)

    He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

    2018-01-01

    The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

  12. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  13. Thermal conductivity of dielectric thin films

    International Nuclear Information System (INIS)

    Lambropoulos, J.C.; Jolly, M.R.; Amaden, C.A.; Gilman, S.E.; Sinicropi, M.J.; Diakomihalis, D.; Jacobs, S.D.

    1989-05-01

    A direct reading thermal comparator has been used to measure the thermal conductivity of dielectric thin film coatings. In the past, the thermal comparator has been used extensively to measure the thermal conductivity of bulk solids, liquids, and gases. The technique has been extended to thin film materials by making experimental improvements and by the application of an analytical heat flow model. Our technique also allows an estimation of the thermal resistance of the film/substrate interface which is shown to depend on the method of film deposition. The thermal conductivity of most thin films was found to be several orders of magnitude lower than that of the material in bulk form. This difference is attributed to structural disorder of materials deposited in thin film form. The experimentation to date has centered primarily on optical coating materials. These coatings, used to enhance the optical properties of components such as lenses and mirrors, are damaged by thermal loads applied in high-power laser applications. It has been widely postulated that there may be a correlation between the thermal conductivity and the damage threshold of these materials. 31 refs., 11 figs., 8 tabs

  14. Effect of solvent type and content on monomer conversion of a model resin system as a thin film.

    Science.gov (United States)

    Holmes, Robert G; Rueggeberg, Frederick A; Callan, Richard S; Caughman, Frank; Chan, Daniel C N; Pashley, David H; Looney, Stephen W

    2007-12-01

    The purpose of this study was to examine the effect of solvent concentration on the degree of conversion of a model photo-activated resin formulation when placed as a thin film in ambient air. A photo-activated co-monomer mixture (ethoxylated bis-GMA/TEGDMA) (Bisco Inc.) was diluted into six concentrations (from 1.0 to 13.0M) with either acetone or ethanol. A controlled volume of diluted, uncured resin was placed on the horizontal surface of an attenuated reflectance unit and the infrared (IR) spectrum obtained. A light emitting diode light-curing source (Bluephase, Ivoclar/Vivadent) then immediately irradiated the specimen for 10s (n=5). Five minutes after exposure, IR spectra of the cured material were obtained, and monomer conversions were calculated using standard methods that monitored changes in aliphatic-to-aromatic CC absorbance ratios in the uncured and cured states. In the acetone/model resin system, maximum conversion occurred with 2.5-5.0M solvent. In the ethanol/model resin system, conversion peaked at 2.5M solvent. Above 5.0M solvent, conversion values declined rapidly for both solvents. A 13.0-M solution resulted in near 0% conversion for both solvents. At 2.5 and 5.0M acetone, conversions exceeded those of equivalent concentrations of the ethanol-based system. For both an acetone- and ethanol-solvated model resin system, conversion did not immediately decrease with addition of solvent, but instead increased over that of the model resin alone. At higher solvent content (greater than 2.5M ethanol and 5.0M acetone), conversion rapidly declined, with ethanol causing less conversion at equal-molar solvent concentrations.

  15. YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

    Science.gov (United States)

    Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

    1993-01-01

    Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

  16. YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

    Science.gov (United States)

    Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

    1993-03-01

    Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

  17. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  18. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  19. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  20. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  1. Research and development of photovoltaic power system. Research on low temperature deposition of polycrystalline thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Teion seimaku gijutsu no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K. [Tokyo Univ. of Agriculture and Technology, Tokyo (Japan). Faculty of Technology

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a technology of low temperature deposition of polycrystalline thin films for solar cells. This research used ITO coated glass substrates, on which CdS was accumulated to a thickness of about 100 nm by using the CBD process, and over this deposition a CuInSe2 film was formed at 300{degree}C by using the ion cluster beam (ICB) process. The manufactured solar cells with a glass/ITO/CdS/CuInSe2/Au structure had an efficiency of 2%. In manufacturing a CuGaSe2 thin film by using the ICB process, effects of acceleration voltage relative to cluster beams and ionization current were investigated. It was found that the film morphology, the result of analysis by using X-ray diffraction, and the electric conductivity are sensitive to the ionization current. From these findings, an optimum film forming condition was derived. A CuGaSe2 thin film was manufactured by using the ICB process over a Cds thin film deposited by using the CDB process. Both of the surface morphology and X-ray diffraction patterns of the film did not show a large change, indicating a possibility of manufacturing cells with a reverse structure. Effects of heat treatment on CuInSe2 monocrystals were evaluated by using ESR and FTIR. 6 figs., 1 tab.

  2. Laser-induced vibration of a thin soap film.

    Science.gov (United States)

    Emile, Olivier; Emile, Janine

    2014-09-21

    We report on the vibration of a thin soap film based on the optical radiation pressure force. The modulated low power laser induces a counter gravity flow in a vertical free-standing draining film. The thickness of the soap film is then higher in the upper region than in the lower region of the film. Moreover, the lifetime of the film is dramatically increased by a factor of 2. Since the laser beam only acts mechanically on the film interfaces, such a film can be employed in an optofluidic diaphragm pump, the interfaces behaving like a vibrating membrane and the liquid in-between being the fluid to be pumped. Such a pump could then be used in delicate micro-equipment, in chips where temperature variations are detrimental and even in biological systems.

  3. The future of rare earth thin films

    International Nuclear Information System (INIS)

    Gasgnier, M.

    1986-01-01

    This paper presents some recent applications in the rare earth field and also may be, some of the future new developments of laboratory works. The field of investigations will concern only materials which contain at least one rare earth element (lanthanide series, from La to Lu, Sc and Y). After a rapid survey of the experimental procedures relative to the preparation and to the analytical characterization of thin films, technological applications in various fields of research are briefly reviewed: for polycrystalline metals (superconductors, neutron absorption, photovoltaic effect...), alloys (hydrogen storage, superconductors) and compounds (target for intense neutron sources, radiology...) and for amorphous magnetic thin films. 81 refs [fr

  4. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...... and strain sensitivity using two- and four-point measurement method. We have found that polyaniline has a negative gauge factor of K = -4.9, which makes it a candidate for piezoresistive read-out in polymer based MEMS-devices. (C) 2007 Elsevier B.V. All rights reserved....

  5. Micro-sensor thin-film anemometer

    Science.gov (United States)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  6. A generalized theory of thin film growth

    Science.gov (United States)

    Du, Feng; Huang, Hanchen

    2018-03-01

    This paper reports a theory of thin film growth that is generalized for arbitrary incidence angle during physical vapor deposition in two dimensions. The accompanying kinetic Monte Carlo simulations serve as verification. A special theory already exists for thin film growth with zero incidence angle, and another theory also exists for nanorod growth with a glancing angle. The theory in this report serves as a bridge to describe the transition from thin film growth to nanorod growth. In particular, this theory gives two critical conditions in analytical form of critical coverage, ΘI and ΘII. The first critical condition defines the onset when crystal growth or step dynamics stops following the wedding cake model for thin film growth. The second critical condition defines the onset when multiple-layer surface steps form to enable nanorod growth. Further, this theory also reveals a critical incidence angle, below which nanorod growth is impossible. The critical coverages, together with the critical incidence angle, defines a phase diagram of thin growth versus nanorod growth.

  7. Thermal and structural properties of spray pyrolysed CdS thin film

    Indian Academy of Sciences (India)

    Unknown

    Thermal and structural properties of CdS thin film. 235. 235 by photoacoustic technique. Polycrystalline CdTe films having 55 µm thickness were grown onto the glass slides using the close space vapour technique. The total thick- ness of two-layer system (glass and CdSe thin film) could be changed by varying the thickness ...

  8. Lattice Mismatch in Crystalline Nanoparticle Thin Films.

    Science.gov (United States)

    Gabrys, Paul A; Seo, Soyoung E; Wang, Mary X; Oh, EunBi; Macfarlane, Robert J; Mirkin, Chad A

    2018-01-10

    For atomic thin films, lattice mismatch during heteroepitaxy leads to an accumulation of strain energy, generally causing the films to irreversibly deform and generate defects. In contrast, more elastically malleable building blocks should be better able to accommodate this mismatch and the resulting strain. Herein, that hypothesis is tested by utilizing DNA-modified nanoparticles as "soft," programmable atom equivalents to grow a heteroepitaxial colloidal thin film. Calculations of interaction potentials, small-angle X-ray scattering data, and electron microscopy images show that the oligomer corona surrounding a particle core can deform and rearrange to store elastic strain up to ±7.7% lattice mismatch, substantially exceeding the ±1% mismatch tolerated by atomic thin films. Importantly, these DNA-coated particles dissipate strain both elastically through a gradual and coherent relaxation/broadening of the mismatched lattice parameter and plastically (irreversibly) through the formation of dislocations or vacancies. These data also suggest that the DNA cannot be extended as readily as compressed, and thus the thin films exhibit distinctly different relaxation behavior in the positive and negative lattice mismatch regimes. These observations provide a more general understanding of how utilizing rigid building blocks coated with soft compressible polymeric materials can be used to control nano- and microstructure.

  9. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  10. Mechanical integrity of thin films

    International Nuclear Information System (INIS)

    Hoffman, R.W.

    1979-01-01

    Mechanical considerations starting with the initial film deposition including questions of adhesion and grading the interface are reviewed. Growth stresses, limiting thickness, stress relief, control aging, and creep are described

  11. Surface roughness characterization of Al-doped zinc oxide thin films using rapid optical measurement

    Science.gov (United States)

    Kuo, Chil-Chyuan

    2011-07-01

    Transparent conductive oxide thin films have been widely investigated in photoelectric devices such as flat panel display (FPD) and solar cells. Al-doped zinc oxide (AZO) thin films have been widely employed in FPD. Measuring the surface roughness of AZO thin films is important before the manufacturing of photoelectric device using AZO thin films because surface roughness of AZO thin films will significantly affect the performance of photoelectric device. Traditional methods to measure surface roughness of AZO thin films are scanning electron microscopy and atomic force microscopy. The disadvantages of these approaches include long lead time and slow measurement speed. To solve this problem, an optical inspection system for rapid measurement of the surface roughness of AZO thin films is developed in this study. It is found that the incident angle of 60° is a good candidate to measure the surface roughness of AZO thin films. Based on the trend equation y=-3.6483 x+2.1409, the surface roughness of AZO thin films ( y) can be directly deduced from the peak power density ( x) using the optical inspection system developed. The maximum measurement-error rate of the optical inspection system developed is less than 8.7%.The saving in inspection time of the surface roughness of AZO thin films is up to 83%.

  12. Electroluminescence of doped organic thin films

    Science.gov (United States)

    Tang, C. W.; VanSlyke, S. A.; Chen, C. H.

    1989-05-01

    Electroluminescent (EL) devices are constructed using multilayer organic thin films. The basic structure consists of a hole-transport layer and a luminescent layer. The hole-transport layer is an amorphous diamine film in which the only mobile carrier is the hole. The luminescent layer consists of a host material, 8-hydroxyquinoline aluminum (Alq), which predominantly transports electrons. High radiance has been achieved at an operating voltage of less than 10 V. By doping the Alq layer with highly fluorescent molecules, the EL efficiency has been improved by about a factor of 2 in comparison with the undoped cell. Representative dopants are coumarins and DCMs. The EL quantum efficiency of the doped system is about 2.5%, photon/electron. The EL colors can be readily tuned from the blue-green to orange-red by a suitable choice of dopants as well as by changing the concentration of the dopant. In the doped system the electron-hole recombination and emission zones can be confined to about 50 Å near the hole-transport interface. In the undoped Alq, the EL emission zone is considerably larger due to exciton diffusion. The multilayer doped EL structure offers a simple means for the direct determination of exciton diffusion length.

  13. Physico-chemical characterization of ultra thin films of functional supramolecular systems on surfaces

    OpenAIRE

    Spampinato, Valentina

    2012-01-01

    The aim of this PhD thesis is the development of new metodologies for surface anchoring of molecular and supramolecular systems for applications in molecular electronics and photonics, and for preparation of devices for molecular recognition. The systems are made up, as usually, of hybrid systems, divided in two parts, a molecular one and a solid support. The molecular part performs the desired function, while the solid support (metal or semiconductor on which the molecules are bound) all...

  14. Magnetocaloric effect of thin Terbium films

    Science.gov (United States)

    Mello, V. D.; Anselmo, D. H. A. L.; Vasconcelos, M. S.; Almeida, N. S.

    2017-12-01

    We report a theoretical study of the magnetocaloric effect of Terbium (Tb) thin films due to finite size and surface effects in the helimagnetic phase, corresponding to a temperature range from TC=219 K to TN=231 K, for external fields of the order of kOe. For a Tb thin film of 6 monolayers submitted to an applied field (ΔH =30 kOe, ΔH =50 kOe and ΔH = 70 kOe) we report a significative change in adiabatic temperature, ΔT / ΔH , near the Néel temperature, of the order ten times higher than that observed for Tb bulk. On the other hand, for small values of the magnetic field, large thickness effects are found. For external field strength around few kOe, we have found that the thermal caloric efficiency increases remarkably for ultrathin films. For an ultrathin film with 6 monolayers, we have found ΔT / ΔH = 43 K/T while for thicker films, with 20 monolayers, ΔT / ΔH = 22 K/T. Our results suggest that thin films of Tb are a promising material for magnetocaloric effect devices for applications at intermediate temperatures.

  15. Extra thin alginate film: an efficient technique for protoplast culture.

    Science.gov (United States)

    Pati, P K; Sharma, Madhu; Ahuja, Paramvir Singh

    2005-12-01

    This paper reports an efficient protoplast culture technique, the "extra thin alginate film" technique. The development of this improved method of protoplast culture was an outcome of an assessment of the efficiency and shortcomings of various protoplast culture techniques. The efficiency of this technique was evaluated with two model plant systems, viz., Nicotiana tabacum and Lotus corniculatus, and a comparison was made with the "thin alginate layer" technique, another efficient protoplast culture system. Results indicate that the culture technique with extra thin alginate film is as efficient as the technique with thin alginate layer, with many additional advantages. The present innovation overcomes most of the limitations of protoplast culture techniques described so far and can now be applied to a wide variety of crops to check its general applicability.

  16. Catalytic EC′ reaction at a thin film modified electrode

    International Nuclear Information System (INIS)

    Gerbino, Leandro; Baruzzi, Ana M.; Iglesias, Rodrigo A.

    2013-01-01

    Numerical simulations of cyclic voltammograms corresponding to a catalytic EC′ reaction taking place at a thin film modified electrode are performed by way of finite difference method. Besides considering the chemical kinetic occurring inside the thin film, the model takes into account the different diffusion coefficients for each species at each of the involved phases, i.e. the thin film layer and bulk solution. The theoretical formulation is given in terms of dimensionless model parameters but a brief discussion of each of these parameters and their relationship to experimental variables is presented. Special emphasis is given to the use of working curve characteristics to quantify diffusion coefficient, homogeneous kinetic constant and thickness of the thin layer in a real system. Validation of the model is made by comparison of experimental results corresponding to the electron charge transfer of Ru(NH 3 ) 6 3+ /Ru(NH 3 ) 6 2+ hemi-couple at a thin film of a cross-linked chitosan film containing an immobilized redox dye

  17. Thermochemical hydrogen generation of indium oxide thin films

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2017-03-01

    Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  18. Thin film composites in the BiFeO3–Bi4Ti3O12 system obtained by an aqueous solution-gel deposition methodology

    Directory of Open Access Journals (Sweden)

    Carlos Gumiel

    2018-01-01

    Full Text Available Thin film multiferroic composites, with a high quantity of interfaces between the different materials, represent a more feasible alternative to single phase systems in which the multifunctional response is usually hampered due to intrinsic physical constraints. Nowadays some of these composites can be produced by applying deposition techniques such as PLD, CVD, MBE or the like, which allow a high degree of crystallographic control. However, despite their effectiveness, all these techniques also involve a high consumption of energy in terms of temperature and/or vacuum. Within this frame, the present contribution proposes a sustainable chemical solution deposition process to prepare thin films of the multiferroic BiFeO3–Bi4Ti3O12 composite system. More specifically an aqueous solution-gel plus spin-coating methodology is employed which also avoids the organic solvents typically used in a conventional sol–gel method, so further keeping an eye on the environmentally friendly conditions. Attempts are conducted that demonstrate how by systematically controlling the processing parameters it is possible to obtain thin film composites with a promising 3-3 type connectivity at temperatures as low as 600 °C.

  19. Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2017-01-01

    Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

  20. Instrumentation for Enhanced Thin Polymer Film Preparation and Characterization as Photonic Systems

    National Research Council Canada - National Science Library

    Mann, J

    1998-01-01

    The instruments purchased or built include: 1. a KSV automated Alternating Layer System, which allows the efficient deposition of alternating Langmuir-Blodgett multilayers from monolayers at the gas-water interface. 2...

  1. Surface proton transport of fully protonated poly(aspartic acid) thin films on quartz substrates

    International Nuclear Information System (INIS)

    Nagao, Yuki; Kubo, Takahiro

    2014-01-01

    Graphical abstract: - Highlights: • Proton transport of fully protonated poly(aspartic acid) thin film was investigated. • The thin film structure differed greatly from the partially protonated one. • Proton transport occurs on the surface, not inside of the thin film. • This result contributes to biological transport systems such as bacteriorhodopsin. - Abstract: Thin film structure and the proton transport property of fully protonated poly(aspartic acid) (P-Asp100) have been investigated. An earlier study assessed partially protonated poly(aspartic acid), highly oriented thin film structure and enhancement of the internal proton transport. In this study of P-Asp100, IR p-polarized multiple-angle incidence resolution (P-MAIR) spectra were measured to investigate the thin film structure. The obtained thin films, with thicknesses of 120–670 nm, had no oriented structure. Relative humidity dependence of the resistance, proton conductivity, and normalized resistance were examined to ascertain the proton transport property of P-Asp100 thin films. The obtained data showed that the proton transport of P-Asp100 thin films might occur on the surface, not inside of the thin film. This phenomenon might be related with the proton transport of the biological system

  2. Optical characterization of niobium pentoxide thin films

    International Nuclear Information System (INIS)

    Pawlicka, A.

    1996-01-01

    Thin films of Nb 2 O 5 were obtained by sol-gel method using ultrasonic irradiation and deposited by dip-coating technique. After calcination at temperatures superior than 500 deg C these films (300 nm thick) were characterized by cyclic voltametry and cronoamperometry. The memory measurements, color efficiency, optical density as a function of wave number and applied potential were effectuated to determine their electrochromic properties. The study of electrochromic properties of these films shows that the insertion process of lithium is reversible and changes their coloration from transparent (T=80%) to dark blue (T=20%). (author)

  3. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)

    2007-07-15

    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Phase transitions in thin films of Sn-Sb-Se system

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Abdalla Belal Adam; Yussof Wahab

    1998-01-01

    The preparation and formation of covalent ternary Sn-Sb-Se system were investigated. A solid state reaction technique was employed whereby the evaporated multilayers of Sn/Se/Sb/Sn reacted chemically at a fixed temperature of 240 o C and were allowed to a room temperature slow-cooling. X-ray diffraction analysis showed that phase changes occurred in the system, with indication of amorphization for the predicted Sn 9 .3Sb 8 .1Se 4 4.9 and Sn 1 3.2Sb 4 3.4Se 4 3.4 compositions. These enabled the preliminary topological phase transitions of Sn-Sb-Se system according to the Gibb's triangle in which the areas of crystalline-amorphous were located. (Author)

  5. The Evolution of Thin-Film Structure in pi-Conjugated System: Implications for Devices

    Science.gov (United States)

    2015-07-09

    organic electronic device applications. Expanding on our solution based studies, we successfully achieved oriented crystallization of conjugated...to semiconductor-insulator systems. Notably, “pre- processing” P3HT-insulating polymer ( polystyrene (PS) or polyisobutylene (PIB)) blend solutions

  6. Patterns and conformations in molecularly thin films

    Science.gov (United States)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  7. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  8. Sputter deposition of metallic thin film and directpatterning

    Energy Technology Data Exchange (ETDEWEB)

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  9. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and

  10. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  11. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...

  12. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic

  13. Thin film hydrous metal oxide catalysts

    Science.gov (United States)

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  14. Polyaniline. Thin films and colloidal dispersions

    Czech Academy of Sciences Publication Activity Database

    Stejskal, Jaroslav; Sapurina, I.

    2005-01-01

    Roč. 77, č. 5 (2005), s. 815-826 ISSN 0033-4545 R&D Projects: GA MŠk ME 539; GA AV ČR IAA4050313 Grant - others:IUPAC project 2002-019-1-400 Keywords : polyaniline * thin films * dispersions Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.679, year: 2005

  15. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric

  16. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  17. Flexoelectricity in barium strontium titanate thin film

    International Nuclear Information System (INIS)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning; Shu, Longlong; Maria, Jon-Paul

    2014-01-01

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba 0.7 Sr 0.3 TiO 3 thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  18. Magnetic surfaces, thin films, and multilayers

    International Nuclear Information System (INIS)

    Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

    1992-01-01

    This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

  19. Functional planar thin film optical waveguide lasers

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav

    2012-01-01

    Roč. 9, č. 2 (2012), 91-99 ISSN 1612-2011 R&D Projects: GA ČR(CZ) GAP106/10/1477 Institutional research plan: CEZ:AV0Z10100522 Keywords : waveguide laser * planar waveguides * thin films * pulsed laser deposition * optical waveguides * laser materials Subject RIV: BH - Optics, Masers, Lasers Impact factor: 7.714, year: 2012

  20. Thin film microelectrodes for electrochemical detection of neurotransmitters

    DEFF Research Database (Denmark)

    Larsen, Simon Tylsgaard

    An important signaling process in the nervous system is the release of chemical messengers called neurotransmitters from neurons. In this thesis alternative thin film electrode materials for applications targeting electrochemical detection of neurotransmitters in chip devices were evaluated....... For this application a very low current noise is needed together with a large temporal resolution. It was shown, that resistive and capacitive properties of thin film electrode materials are determining their usefulness in low-noise amperometric measurements. An analytical expression for the noise was derived...

  1. Peltier cooling and onsager reciprocity in ferromagnetic thin films.

    Science.gov (United States)

    Avery, A D; Zink, B L

    2013-09-20

    We present direct measurements of the Peltier effect as a function of temperature from 77 to 325 K in Ni, Ni(80)Fe(20), and Fe thin films made using a suspended Si-N membrane structure. Measurement of the Seebeck effect in the same films allows us to directly test predictions of Onsager reciprocity between the Peltier and Seebeck effects. The Peltier coefficient Π is negative for both Ni and Ni(80)Fe(20) films and positive for the Fe film. The Fe film also exhibits a peak associated with the magnon drag Peltier effect. The observation of magnon drag in the Fe film verifies that the coupling between the phonon, magnon, and electron systems in the film is the same whether driven by heat current or charge current. The excellent agreement between Π values predicted using the experimentally determined Seebeck coefficient for these films and measured values offers direct experimental confirmation of the Onsager reciprocity between these thermoelectric effects in ferromagnetic thin films near room temperature.

  2. Absorption spectra of thin films of triple compounds in the system RbIPbI2

    International Nuclear Information System (INIS)

    Yunakova, O.N.; Miloslavskij, V.K.; Ksenofontova, E.V.; Kovalenko, E.N.

    2012-01-01

    A formation of compounds RbPbI 3 and Rb 4 PbI 6 in the system RbI-PbI 2 is revealed and their absorption spectra are investigated in an energy interval 2-6 eV and a temperatures range 90-500 K. It is established that the low-frequency exciton excitations are localized in PbI 6 4- structural elements of the crystal lattice, they are classified as excitons of intermediate coupling and are of a three-dimensional character in RbPbI 3 and a quasi-two-dimensional one in Rb 4 PbI 6 .

  3. Thin film preparation of semiconducting iron pyrite

    Science.gov (United States)

    Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

    1990-08-01

    Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.

  4. Study of zinc oxide thin film characteristics

    Directory of Open Access Journals (Sweden)

    Johari Shazlina

    2017-01-01

    Full Text Available This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influenced by the film thickness, substrate used and annealed temperature and the averages are all above 80%. On surface morphology observed by AFM and FESEM, the results show that the increase of film thickness and annealed temperature will increase the mean grain size, surface-to-volume ration and RMS roughness. Besides that, higher annealing temperature cause the crystalline quality to gradually improve and the wurtzite structure of ZnO can be seen more clearly. Nonetheless, the substrate used had no effect on surface morphology, yet the uniformity of deposition on silicon wafer is better than glass and quartz.

  5. Morphology of Cellulose and Cellulose Blend Thin FilmsMorphology of cellulose and cellulose blend thin films

    Science.gov (United States)

    Lu, Rui

    Cellulose is the most abundant, renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. It is useful to study amorphous cellulose as most reactions happen in the non-crystalline regions first and at the edge of crystalline regions. In this study, amorphous thin films of cotton linter cellulose with various thicknesses were spincoated on silicon wafers from cellulose solutions in dimethyl sulfoxide / ionic liquid mixtures. Optical microscopy and atomic force microscopy indicated that the morphology of as-cast films was sensitive to the film preparation conditions. A sample preparation protocol with low humidity system was developed to achieve featureless smooth films over multiple length scales from nanometers to tens of microns. X-ray reflectivity, X-ray diffraction, Fourier transform infrared spectroscopy and high resolution sum-frequency generation vibrational spectroscopy were utilized to confirm that there were no crystalline regions in the films. One- and three- layer models were used to analyze the X-ray reflectivity data to obtain information about roughness, density and interfacial roughness as a function of film thickness from 10-100nm. Stability tests of the thin films were conducted under harsh conditions including hot water, acid and alkali solutions. The stability of thin films of cellulose blended with the synthetic polymer, polyacrylonitrile, was also investigated. The blend thin films improved the etching resistance to alkali solutions and retained the stability in hot water and acid solutions compared to the pure cellulose films.

  6. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  7. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films and bulk hosts are also discussed. Keywords. Alkali metal; thin films; magnetism; density functional ...

  8. Optical and electrical properties of nickel xanthate thin films

    Indian Academy of Sciences (India)

    Keywords. Nickel xanthate thin film; organometallic thin film; chemical bath deposition. Abstract. Nickel xanthate thin films (NXTF) were successfully deposited by chemical bath deposition, on to amorphous glass substrates, as well as on - and -silicon, indium tin oxide and poly(methyl methacrylate). The structure of the ...

  9. On the impedance and phase transition of thin film all-solid-state batteries based on the Li4Ti5O12 system

    Science.gov (United States)

    Schichtel, Patrick; Geiß, Matthias; Leichtweiß, Thomas; Sann, Joachim; Weber, Dominik A.; Janek, Jürgen

    2017-08-01

    Model-type thin film all-solid-state batteries (ASSB) of the type Li/;LiPON;/Li4Ti5O12 are characterized by impedance spectroscopy as function of the state of charge. Both the contact of Li4Ti5O12 (LTO) to the substrate and current collector as well as the Li ion transport through the LTO thin film prove to be important factors for the rate limitation of the cell. The ionic charge transfer resistance between Li4Ti5O12 and ;LiPON; is proven to not be a rate limiting factor. The impedance measurements are interpreted in terms of the mechanism of phase change in the Li4Ti5O12 thin film and the data indicate a solid solution mechanism of phase change. The resulting data are compared to recent results for the Li/;LiPON;/LiCoO2 system, and several key similarities and differences are highlighted mostly involving the solid electrolyte/Li interface and the degradation thereof. The results are meant to improve the understanding of interfaces in ASSB in general rather than to advance high performance batteries.

  10. Characterization of Pb(Zr, Ti)O sub 3 thin films prepared by metal-organic chemical-vapor deposition using a solid delivery system

    CERN Document Server

    Shin, J C; Hwang, C S; Kim, H J; Lee, J M

    1999-01-01

    Pb(Zr, Ti)O sub 3 (PZT) thin films were deposited on Pt/SiO sub 2 /Si substrates by metal-organic chemical-vapor deposition technique using a solid delivery system to improve the reproducibility of the deposition. The self-regulation mechanism, controlling the Pb-content of the film, was observed to work above a substrate temperature of 620 .deg. C. Even with the self-regulation mechanism, PZT films having low leakage current were obtained only when the molar mixing ratio of the input precursors was 1

  11. Electrochemical fabrication of nanoporous polypyrrole thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

    2008-04-30

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)

  12. Semiconducting boron carbide thin films: Structure, processing, and diode applications

    Science.gov (United States)

    Bao, Ruqiang

    The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic

  13. Structures and Elastic Moduli of Polymer Nanocomposite Thin Films

    Science.gov (United States)

    Yuan, Hongyi; Karim, Alamgir; University of Akron Team

    2014-03-01

    Polymeric thin films generally possess unique mechanical and thermal properties due to confinement. In this study we investigated structures and elastic moduli of polymer nanocomposite thin films, which can potentially find wide applications in diverse areas such as in coating, permeation and separation. Conventional thermoplastics (PS, PMMA) and biopolymers (PLA, PCL) were chosen as polymer matrices. Various types of nanoparticles were used including nanoclay, fullerene and functionalized inorganic particles. Samples were prepared by solvent-mixing followed by spin-coating or flow-coating. Film structures were characterized using X-ray scattering and transmission electron microscopy. Elastic moduli were measured by strain-induced elastic buckling instability for mechanical measurements (SIEBIMM), and a strengthening effect was found in certain systems due to strong interaction between polymers and nanoparticles. The effects of polymer structure, nanoparticle addition and film thickness on elastic modulus will be discussed and compared with bulk materials.

  14. Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system

    Science.gov (United States)

    Mazur, M.; Poniedziałek, A.; Kaczmarek, D.; Wojcieszak, D.; Domaradzki, J.; Gibson, D.

    2017-11-01

    In this work the properties of hafnium dioxide (HfO2), titanium dioxide (TiO2) and mixed HfO2-TiO2 thin films with various amount of titanium addition, deposited by magnetron sputtering were described. Structural, surface, optical and mechanical properties of deposited coatings were analyzed. Based on X-ray diffraction and Raman scattering measuremets it was observed that there was a significant influence of titanium concentration in mixed TiO2-HfO2 thin films on their microstructure. Increase of Ti content in prepared mixed oxides coatings caused, e.g. a decrease of average crystallite size and amorphisation of the coatings. As-deposited hafnia and titania thin films exhibited nanocrystalline structure of monoclinic phase and mixed anatase-rutile phase for HfO2 and TiO2 thin films, respectively. Atomic force microscopy investigations showed that the surface of deposited thin films was densely packed, crack-free and composed of visible grains. Surface roughness and the value of water contact angle decreased with the increase of Ti content in mixed oxides. Results of optical studies showed that all deposited thin films were well transparent in a visible light range. The effect of the change of material composition on the cut-off wavelength, refractive index and packing density was also investigated. Performed measurements of mechanical properties revealed that hardness and Young's elastic modulus of thin films were dependent on material composition. Hardness of thin films increased with an increase of Ti content in thin films, from 4.90 GPa to 13.7 GPa for HfO2 and TiO2, respectively. The results of the scratch resistance showed that thin films with proper material composition can be used as protective coatings in optical devices.

  15. 3{omega} measurements of half-Heusler thin films using a passive circuit

    Energy Technology Data Exchange (ETDEWEB)

    Mix, Christian; Jaeger, Tino; Jakob, Gerhard [Institut fuer Physik, Universitaet Mainz, Staudinger Weg 7, 55128 Mainz (Germany)

    2011-07-01

    One possibility to increase the thermoelectric Figure-of-Merit of thin films is to decrease the thermal conductivity, by replacing the thin film with a superlattice of the same thickness. This is one of the major challenges in ongoing research. For this purpose a 3{omega}-measurement system is built up to obtain the thermal conductivity of thin films. To nullify influences of active elements, a setup including a wheatstone bridge is used. Different aspects of the measurement system like the influence of thermal penetration depth and the energy losses by atmosphere are discussed. Additionally, first results on Half-Heusler thin films and superlattices are presented.

  16. Embedded thin-film transistors for signal conditioning in polymer microelectromechanical systems

    Science.gov (United States)

    Turgut, Ozhan Hulusi

    The three main sources of the total pressure deficit in a turbine stage are profile loss, leakage loss, and the endwall boundary layer loss. The total pressure loss related to endwall boundary layer in a turbine passage may represent about one third of the total loss measured. The endwall loss definition involves the secondary flows such as the horseshoe vortex, passage vortex, and the cross-passage flow from the pressure surface to the suction surface. Researchers have been trying various methods to reduce the effect of these flow structures. The successful approaches for meaningful aerodynamic improvements can be counted as the axisymmetric/nonaxisymmetric endwall contouring, blade leading edge modifications, using shape optimized blades, and the insertion of endwall fences. One of the promising methods for reducing the secondary flows in a turbine stage is the nonaxisymmetric endwall contouring. Besides the improvement with axial endwall contouring having cylindrical endwalls, nonaxisymmetric contouring could significantly contribute to the energy efficiency in turbomachinery systems. The modern turbine stages with reduced blade count could undergo additional secondary flow losses which can be counteracted by nonaxisymmetric endwall contouring. Additionally, the aerodynamic losses related to the horseshoe vortex can be minimized using a leading edge (LE) fillet, which fills the intersection of the nozzle guide vane (NGV) and the hub endwall. It forms a smooth transition from the NGV leading edge to the endwall surface. These LE fillets improve the aerodynamics of the flow and the heat transfer effectiveness, as well. The main goal of this study was to minimize the secondary flows by developing methods such as designing nonaxisymmetric endwall contouring and LE fillets. The study is unique in itself because it was performed in the well simulated turbine stage, the Axial Flow Turbine Research Facility (AFTRF), that is including an actual rotor. Many current

  17. Thin film diamond microstructure applications

    Science.gov (United States)

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  18. Asymmetric block copolymers confined in a thin film

    NARCIS (Netherlands)

    Huinink, HP; Brokken-Zijp, JCM; van Dijk, MA; Sevink, GJA

    2000-01-01

    We have used a dynamic density functional theory (DDFT) for polymeric systems, to simulate the formation of micro phases in a melt of an asymmetric block copolymer, A(n)B(m)(f(A) = 1/3), both in the bulk and in a thin film. In the DDFT model a polymer is represented as a chain of springs and beads.

  19. Organic thin film transistor integration: a hybrid approach

    National Research Council Canada - National Science Library

    Li, F. M

    2011-01-01

    .... Her research interests are in the field of nanoand thin-film technology for applications in large area and flexible electronics, including displays, sensors, photovoltaics, circuits and systems. Dr. Li has co-authored a book entitled CCD Image Sensors in Deep-Ultraviolet (2005), and has published articles in various scientific journals. Arokia Nathan holds the...

  20. Mechanical Robustness and Hermeticity Monitoring for MEMS Thin Film Encapsulation

    NARCIS (Netherlands)

    Santagata, F.

    2011-01-01

    Many Micro-Electro-Mechanical-Systems (MEMS) require encapsulation, to prevent delicate sensor structures being exposed to external perturbations such as dust, humidity, touching, and gas pressure. An upcoming and cost-effective way of encapsulation is zero-level packaging or thin-film

  1. Thin Films for X-ray Optics

    Science.gov (United States)

    Conley, Raymond

    Focusing x-rays with refraction requires an entire array of lens instead of a single element, each contributing a minute amount of focusing to the system. In contrast to their visible light counterparts, diffractive optics require a certain depth along the optical axis in order to provide sufficient phase shift. Mirrors reflect only at very shallow angles. In order to increase the angle of incidence, contribution from constructive interference within many layers needs to be collected. This requires a multilayer coating. Thin films have become a central ingredient for many x-ray optics due to the ease of which material composition and thickness can be controlled. Chapter 1 starts with a short introduction and survey of the field of x-ray optics. This begins with an explanation of reflective multilayers. Focusing optics are presented next, including mirrors, zone plates, refractive lenses, and multilayer Laue lens (MLL). The strengths and weaknesses of each "species" of optic are briefly discussed, alongside fabrication issues and the ultimate performance for each. Practical considerations on the use of thin-films for x-ray optics fabrication span a wide array of topics including material systems selection and instrumentation design. Sputter deposition is utilized exclusively for the work included herein because this method of thin-film deposition allows a wide array of deposition parameters to be controlled. This chapter also includes a short description of two deposition systems I have designed. Chapter 2 covers a small sampling of some of my work on reflective multilayers, and outlines two of the deposition systems I have designed and built at the Advanced Photon Source. A three-stripe double multilayer monochromator is presented as a case study in order to detail specifications, fabrication, and performance of this prolific breed of x-ray optics. The APS Rotary Deposition System was the first deposition system in the world designed specifically for multilayer

  2. Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

    Science.gov (United States)

    Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

    2018-04-01

    In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

  3. Flexible magnetic thin films and devices

    Science.gov (United States)

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  4. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  5. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  6. Disappearance of superconductivity and critical resistance in thin indium films

    International Nuclear Information System (INIS)

    Okuma, Satoshi; Nishida, Nobuhiko

    1991-01-01

    In thin granular films composed of two-dimensionally coupled indium particles, we have studied influences of average particle sizes anti d on the superconducting transition. For films with anti d=280A and 224A, superconducting transition temperature stays almost constant with increasing the sheet resistance R n in the normal state, while for a film with anti d=140A, it decreases linearly with R n . This means that the system changes to a dirty superconductor by reducing anti d. With further increasing R n , superconductivity disappears when R n exceeds the value R c of order h/4e 2 , which seems to correlate with anti d. (orig.)

  7. Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc

    Science.gov (United States)

    Özen, Soner; Pat, Suat; Korkmaz, Şadan

    2018-03-01

    Undoped and lead (Pb)-doped gallium nitride (GaN) thin films have been deposited by a thermionic vacuum arc (TVA) method. Glass and polyethylene terephthalate were selected as optically transparent substrates. The structural, optical, morphological, and electrical properties of the deposited thin films were investigated. These physical properties were interpreted by comparison with related analysis methods. The crystalline structure of the deposited GaN thin films was hexagonal wurtzite. The optical bandgap energy of the GaN and Pb-doped GaN thin films was found to be 3.45 eV and 3.47 eV, respectively. The surface properties of the deposited thin films were imaged using atomic force microscopy and field-emission scanning electron microscopy, revealing a nanostructured, homogeneous, and granular surface structure. These results confirm that the TVA method is an alternative layer deposition system for Pb-doped GaN thin films.

  8. Antimicrobial activity of biopolymer–antibiotic thin films fabricated by advanced pulsed laser methods

    International Nuclear Information System (INIS)

    Cristescu, R.; Popescu, C.; Dorcioman, G.; Miroiu, F.M.; Socol, G.; Mihailescu, I.N.; Gittard, S.D.; Miller, P.R.; Narayan, R.J.; Enculescu, M.; Chrisey, D.B.

    2013-01-01

    We report on thin film deposition by matrix assisted pulsed laser evaporation (MAPLE) of two polymer–drug composite thin film systems. A pulsed KrF* excimer laser source (λ = 248 nm, τ = 25 ns, ν = 10 Hz) was used to deposit composite thin films of poly(D,L-lactide) (PDLLA) containing several gentamicin concentrations. FTIR spectroscopy was used to demonstrate that MAPLE-transferred materials exhibited chemical structures similar to those of drop cast materials. Scanning electron microscopy data indicated that MAPLE may be used to fabricate thin films of good morphological quality. The activity of PDLLA–gentamicin composite thin films against Staphylococcus aureus bacteria was demonstrated using drop testing. The influence of drug concentration on microbial viability was also assessed. Our studies indicate that polymer–drug composite thin films prepared by MAPLE may be used to impart antimicrobial activity to implants, medical devices, and other contact surfaces.

  9. Investigation of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Mortensen, Emma L.

    This dissertation focuses on improvements to electrodeposited cuprous oxide as a candidate for the absorber layer for a thin film solar cell that could be integrated into a mechanical solar cell stack. Cuprous oxide (Cu2O) is an earth abundant material that has a bandgap of 2 eV with absorption coefficients around 102-106 cm-1. This bandgap is not optimized for use as a single-junction solar cell, but could be ideal for use in a tandem solar cell device. The theoretical efficiency of a material with a bandgap of 2.0 eV is 20%. The greatest actual efficiency that has been achieved for a Cu2O solar cell is only 8.1%. For the present work the primary focus has been on improving the microstructure of the absorber layer film. The Cu2O films were fabricated using electrodeposition. A seeding layer was developed using gold (Au); which was manipulated into nano-islands and used as the substrate for the Cu2O electrodeposition. The films were characterized and compared to determine the growth mechanism of each film using scanning electron microscopy (SEM). X-ray diffraction (XRD) was used to establish and compare the chemical phases that were present in each of the films. The crystal structure of the Cu2O film grown on gold was explored using transmission electron microscopy (TEM), and this helped confirm the effect that the gold had on the growth of Cu2O. The Tauc method was then used to determine the bandgap of the films of Cu2O grown on both substrates and this showed that the Au based Cu2O film was a superior film. Electrical tests were also completed using a solar simulator and this established that the film grown on gold exhibited photoconductivity that was not seen on the film without gold. In addition, for this thesis, a method for depositing an n-type Cu2O film, based on a Cu-metal solution-boiling process, was investigated. Three forms of copper were tested: a sheet of copper, electrodeposited copper, and sputtered copper. The chemical phases were observed using

  10. Achieving 3-D Nanoparticle Assembly in Nanocomposite Thin Films via Kinetic Control

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Jingyu; Xiao, Yihan; Xu, Ting [UCB

    2017-02-20

    Nanocomposite thin films containing well-ordered nanoparticle (NP) assemblies are ideal candidates for the fabrication of metamaterials. Achieving 3-D assembly of NPs in nanocomposite thin films is thermodynamically challenging as the particle size gets similar to that of a single polymer chain. The entropic penalties of polymeric matrix upon NP incorporation leads to NP aggregation on the film surface or within the defects in the film. Controlling the kinetic pathways of assembly process provides an alternative path forward by arresting the system in nonequilibrium states. Here, we report the thin film 3-D hierarchical assembly of 20 nm NPs in supramolecules with a 30 nm periodicity. By mediating the NP diffusion kinetics in the supramolecular matrix, surface aggregation of NPs was suppressed and NPs coassemble with supramolecules to form new 3-D morphologies in thin films. The present studies opened a viable route to achieve designer functional composite thin films via kinetic control.

  11. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  12. Nanoscale phenomena in ferroelectric thin films

    Science.gov (United States)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  13. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  14. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  15. Radiation induced luminescence from a dipole immersed in a thin film

    International Nuclear Information System (INIS)

    Nkoma, J.S.

    1990-08-01

    Luminescence is modelled as electromagnetic radiation from a dipole immersed in a thin film. Maxwell's equations are solved for the cases when the dipole in the thin film is oriented normal and parallel to the interfaces. Expressions for emitted electric fields outside the thin film are derived and are found to have a resonant denominator that vanishes at the surface polariton excitation frequencies for a thin film. Luminescent spectra are plotted and peaks are found that are identified to be associated with both surface response and bulk response. Numerical results are presented to illustrate the model by considering a vacuum-GaP-sapphire system. (author). 9 refs, 5 figs

  16. Subdiffraction instrumentation development and application to the elucidation of biological systems, thin films, and organic photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Lesoine, Michael D [Iowa State Univ., Ames, IA (United States)

    2014-12-01

    Fluorescence and Raman instrumentation was developed to elucidate morphology, information on local environment, and material properties of target systems. Far-field fluorescence and luminescence spectroscopic measurements were performed using a pulsed super-continuum laser source and detector with high temporal resolution. With this arrangement morphologies of structures were coupled with time-correlated data. Polymeric beads and Alexa Fluor 594-phalloidin labeled cellular actin structures of cultured cells were imaged below the diffraction limit using stimulated emission depletion to resolve structures to ≈40nm. Lifetime imaging revealed a 2.0 ± 0.1 ns lifetime for fluorescently-labeled beads in confocal and depletion imaging modes. Depletion imaging was also able to display a change of 2.2 to 2.9 ns for different regions of the cellular actin network of cultured cells with a possible difference in lifetime caused by tryptophan quenching of the dye. Subdiffraction imaging with a resolution of ≈40 nm was also accomplished using luminescence depletion of photostable giant CdSe/14CdS nanocrystal quantum dots in air. Nanocrystal quantum dots, typically not prone to depletion, exhibited this phenomenon when excited with an energy of 50 pJ and 2 nJ of depletion energy. Luminescence depletion required half the energy compared to stimulated emission depletion to achieve the same resolution limit. The luminescence was depleted by as much as ≈92% with no observable photobleaching. Raman measurements of polymer films were performed with 532-nm laser illumination using scanning angle and conventional 180° backscattering modes to determine chemical information. The scanning angle mode achieved an angle resolution of 0.09° and was used to probe a thin layer of polystyrene as well as a diblock copolymer of polystyrene and poly(3-hexylthiophene-2,5-diyl). Enhancements to the Raman signals at selected angles lower than the critical angle for total internal reflection

  17. Quenching of superconductivity in disordered thin films by phase fluctuations

    International Nuclear Information System (INIS)

    Hebard, A.F.; Palaanen, M.A.

    1992-01-01

    The amplitude Ψ 0 and phase Φ of the superconducting order parameter in thin-film systems are affected differently by disorder and dimensionality. With increasing disorder superconducting long range order is quenched in sufficiently thin films by physical processes driven by phase fluctuations. This occurs at both the zero-field vortex-antivortex unbinding transition and at the zero-temperature magnetic-field-tuned superconducting-insulating transition. At both of these transitions Ψ 0 is finite and constant, vanishing only when temperature, disorder, and/or magnetic field are increased further. Experimental results on amorphous-composite InO x films are presented to illustrate these points and appropriate comparisons are made to other experimental systems. (orig.)

  18. Substrate heater for thin film deposition

    Science.gov (United States)

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  19. Thin film photovoltaic panel and method

    Science.gov (United States)

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  20. Piezoelectric properties of lead-free CaBi4Ti4O15 thin films

    Science.gov (United States)

    Arai, Fumihito; Motoo, Kohei; Fukuda, Toshio; Kato, Kazumi

    2004-11-01

    CaBi4Ti4O15 (CBTi144) thin films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. CBTi144 thin films were prepared on Pt substrates by dip coating a precursor solution of metal alkoxides. We fabricated a piezoelectric bimorph actuator using those films and analyzed the displacement induced by the electric field. Young's modulus was measured by the vibrating-reed technique and the piezoelectric constant d31 was derived by analysis of bending displacement and measurement of displacement-voltage curve. The measurements revealed that the CBTi144 films had a large piezoelectric constant d31 of 32pm /V.

  1. Thin-film calorimetry. In-situ characterization of materials for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Omelcenko, Alexander; Wulfmeier, Hendrik; Albrecht, Daniel; Fritze, Holger [Clausthal Univ. of Technology, Goslar (Germany). Inst. of Energy Research and Physical Technologies; El Mofid, Wassima; Ivanov, Svetlozar; Bund, Andreas [Ilmenau Univ. of Technology (Germany). Dept. of Electrochemistry

    2017-11-15

    Thin-film calorimetry allows for qualitative and quantitative in-situ analysis of thermodynamic properties of thin films and thin-film systems from room temperature up to 1000 C. It is based on highly sensitive piezoelectric langasite resonators which serve simultaneously as planar temperature sensors and substrates for the films of interest. Generation or consumption of heat during phase transformations of the films cause deviations from the regular course of the resonance frequency. Thermodynamic data such as phase transformation temperatures and enthalpies are extracted from these deviations. Thin-film calorimetry on Sn and Al thin films is performed to prove the concept. The results demonstrate high reproducibility of the measurement approach and are in agreement with literature data obtained by established calorimetric techniques. The calibration of the system is done in different atmospheres by application of defined heat pulses via heating structures. The latter replace the films of interest and simulate phase transformations to provide detailed analysis of the heat transfer mechanisms occurring in the measurement system. Based on this analysis, a data evaluation concept is developed. Application-relevant studies are performed on thin films of the lithium-ion battery materials NMC(A), NCA, LMO, and MoS{sub 2}. Their phase transformation temperatures and enthalpies are evaluated in oxidizing and reducing atmospheres. Furthermore, their thermodynamic stability ranges are presented. Finally, measurements on all-solid-state thin-film batteries during electrochemical cycling are performed. They demonstrate the suitability of the system for in-situ investigations.

  2. Thin films for gas sensors

    Science.gov (United States)

    Pires, Jose Miguel Alves Correia

    Nos ultimos anos tem-se assistido a um aumento dos investimentos na investigacao de novos materiais para aplicacao em sensores. Apesar de ja existir um bom numero de dispositivos explorados comercialmente, muitas vezes, quer devido aos elevados custos de producao, quer devido a uma crescente exigencia do ponto de vista das caracteristicas de funcionamento, continua a ser necessario procurar novos materiais ou novas formas de producao que permitam baixar os custos e melhorar o desempenho dos dispositivos. No campo dos sensores de gases tem-se verificado continuos avancos nos ultimos anos. Continua todavia a ser necessario conhecer melhor, tanto os processos de producao dos materiais, como os mecanismos que regulam a sensibilidade dos dispositivos aos gases, de modo a orientar adequadamente a investigacao dos novos materiais, nomeadamente no que se refere a optimizacao dos parâmetros que nao satisfazem ainda os requisitos do mercado. Um dos materiais que tem mostrado melhores qualidades para aplicacao em sensores de gases de tipo resistivo e o dioxido de estanho. Este material tem sido produzido sob diversas formas e usando diferentes tecnicas, como sejam: sol-gel [1], pulverizacao catodica (sputtering) por magnetrao [2-4], sinterizacao de pos [5, 6], ablacao laser [7] ou RGTO [8]. Os resultados obtidos revelam que as caracteristicas dos dispositivos sao muito dependentes das tecnicas usadas na sua producao. A deposicao usando sputtering reactivo por magnetrao e uma tecnica que permite obter filmes finos de oxido de estanho com diferentes caracteristicas, quer do ponto de vista da estrutura, quer da composicao, e por isso, tambem, com diferentes sensibilidades aos gases. No âmbito deste trabalho, foram produzidos filmes de SnO2 usando sputtering DC reactivo com diferentes condicoes de deposicao. Os substratos usados foram lâminas de vidro e o alvo foi estanho com 99.9% de pureza. Foi estudada a influencia da atmosfera de deposicao, da pressao parcial do O2, da

  3. The carbonization of thin polyaniline films

    Czech Academy of Sciences Publication Activity Database

    Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

    2012-01-01

    Roč. 520, č. 19 (2012), s. 6088-6094 ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

  4. Thin film interfaces for microelectrochemical sensors

    Science.gov (United States)

    Tvarozek, Vladimir; Ivanic, Rastislav; Jakubec, Andrej; Novotny, Ivan; Rehacek, Vlastimil

    2001-09-01

    Planar microelectrochemical chips with thin film electodes of different shapes and arrangement, have been developed and fabricated. Micro electrochemical cell with closely vertically spaced electrodes allows to exploit the effect of redox recycling and an increase of collection efficiency for a high current amplification. PC simulations of electro- mechanical properties of sl-BLM is useful tool for evaluation and prediction of BLM behavior. Non-symmetric microelectrode arrays were designed and fabricated for electrical monitoring of human skin.

  5. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building -integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  6. Optical characterization of thin solid films

    CERN Document Server

    Ohlídal, Miloslav

    2018-01-01

    This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

  7. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  8. P-type CuxS thin films: Integration in a thin film transistor structure

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

    2013-01-01

    Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

  9. Thin film metallization for micro-bimetallic actuators

    Science.gov (United States)

    Gorrell, Jonathan Frank

    In this study, eleven different thin film metallization systems were evaluated for use in micro-bimetallic actuators for microelectromechanical structures. These films were evaporated or sputtered onto silicon wafers. The film stress and stress relaxation were determined by measuring changes in the wafer curvature. The phases and micro-structure of these films were evaluated with, scanning electron microscopy, transmission electron microscopy, Auger electron spectroscopy, electron probe micro-analysis, X-ray diffraction and line shape analysis, and atomic force microscopy. Bimetallic actuator may be operated to generate either force or displacement. The displacement mode is dominated by the coefficient of thermal expansion while the force mode is a function of both Young's modulus and coefficient of thermal expansion of the active layer material. In both modes the maximum displacement or force is determined by the material's yield strength. A figure of merit was developed to aid in material selection. The 5052 aluminum alloy films showed that solid solution strengthening can double the yield strength of a thin film. The T201 aluminum alloy films showed that precipitates can increase yield strength by 2.5 times. The 2090 alloy film oxidized during the first heating. Based on isothermal stress relaxation data and changes in the micro-structure of the 5052 and T201 alloy thin films, two mechanisms involving logarithmic creep have been postulated to cause stress relaxation. One mechanism is movement of dislocations in slip systems that terminate at the surface while the other is dislocations moving in slip systems that terminate at grain boundaries. Copper gold intermetallics films oxidized and plastically deformed before the order-disorder transformation occurred, but showed that ordered intermetallics have a lower stress relaxation rate than the solid solution phase. The Alsb3Ti films showed no stress relaxation at 450sp°C, plastically deformed only above 500sp

  10. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  11. Multiferroic RMnO3 thin films

    Science.gov (United States)

    Fontcuberta, Josep

    2015-03-01

    Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress, providing a suitable platform to tailor spin-spin and spin-lattice interactions. With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO3 epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments. En ce qui concerne les applications, le développement de films minces de matériaux multiferroïques a aussi énormément progressé, et de nos jours des films minces de manganites avec des propriétés similaires à celles des matériaux massifs existent. Nous passons en revue ici les résultats obtenus dans le domaine de la croissance de couches minces épitaxiés de RMnO3 hexagonal et orthorhombique et de la caractérisation de leurs propriétés magnétiques et ferroélectriques. Nous discutons certains enjeux et proposons quelques idées pour des recherches et développements futurs.

  12. Additives to silane for thin film silicon photovoltaic devices

    Science.gov (United States)

    Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

    2013-09-17

    Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

  13. Ferroelectrics onto silicon prepared by chemical solution deposition methods: from the thin film to the self-assembled systems

    Directory of Open Access Journals (Sweden)

    Calzada, M. L.

    2006-06-01

    Full Text Available The work of the authors during the last years on ferroelectric thin and ultra-thin films deposited by Chemical Solution Deposition (CSD onto silicon based substrates is reviewed in this paper. Ferroelectric layers integrated with silicon substrates have potential use in the new micro/nanoelectronic devices. Two hot issues are here considered: 1 the use of low processing temperatures of the ferroelectric film, with the objective of not producing any damage on the different elements of the device heterostructure, and 2 the downscaling of the ferroelectric material with the aim of achieving the high densities of integration required in the next generation of nanoelectronic devices. The UV-assisted Rapid Thermal Processing has successfully been used in our laboratory for the fabrication of ferroelectric films at low temperatures. Preliminary results on the CSD preparation of nanosized ferroelectric structures are shown.

    Este artículo revisa el trabajo realizado por los autores durante los últimos años sobre lámina delgada y ultra-delgada ferroeléctrica preparada mediante el depósito químico de disoluciones (CSD sobre substratos de silicio. Las películas ferroeléctricas integradas con silicio tienen potenciales usos en los nuevos dispositivos micro/nanoelectrónicos. Dos aspectos claves son aquí considerados: 1 el uso de bajas temperaturas de procesado de la lámina ferroeléctrica, con el fin de no dañar los diferentes elementos que forman la heteroestructura del dispositivo y 2 la disminución de tamaño del material ferroeléctrico con el fin de conseguir las altas densidades de integración requeridas en la próxima generación de dispositivos nanoelectróncos. Los procesos térmicos rápidos asistidos con irradiación UV se están usando en nuestro laboratorio para conseguir la fabricación del material ferroeléctrico a temperaturas bajas compatibles con la tecnología del silicio. Se muestran resultados preliminares sobre

  14. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  15. Thermal properties of methyltrimethoxysilane aerogel thin films

    Directory of Open Access Journals (Sweden)

    Leandro N. Acquaroli

    2016-10-01

    Full Text Available Aerogels are light and porous solids whose properties, largely determined by their nanostructure, are useful in a wide range of applications, e.g., thermal insulation. In this work, as-deposited and thermally treated air-filled silica aerogel thin films synthesized using the sol-gel method were studied for their thermal properties using the 3-omega technique, at ambient conditions. The thermal conductivity and diffusivity were found to increase as the porosity of the aerogel decreased. Thermally treated films show a clear reduction in thermal conductivity compared with that of as-deposited films, likely due to an increase of porosity. The smallest thermal conductivity and diffusivity found for our aerogels were 0.019 W m−1 K−1 and 9.8 × 10-9 m2 s−1. A model was used to identify the components (solid, gaseous and radiative of the total thermal conductivity of the aerogel.

  16. Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics

    Science.gov (United States)

    Gyanan; Mondal, Sandip; Kumar, Arvind

    2016-12-01

    Post-deposition annealing (PDA) is an inherent part of a sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. Annealing removes the oxygen vacancies and improves the structural order of the dielectric films. The process also reduces the interface related defects and improves the interfacial properties. Here, we applied a sol-gel spin-coating technique to prepare high-k TiO2 films on the p-Si substrate. These films were fired at 400 °C for the duration of 20, 40, 60 and 80 min to know the effects of annealing time on the device characteristics. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of annealed TiO2 films were examined in Al/TiO2/p-Si device configuration at room temperature. The 60 min annealed film gives the optimum performance and contained 69.5% anatase and 39.5% rutile phase with refractive index 2.40 at 550 nm. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. This allows us to tune the various electrical properties of MOS systems. The accumulation capacitance (Cox), dielectric constant (κ) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25 nm, respectively with a low leakage current density (3.13 × 10-7 A/cm2) fired for 80 min at -1 V. The current conduction mechanisms at high bias voltage were dominated by trap-charge limited current (TCLC), while at small voltages, space charge limited current (SCLC) was more prominent.

  17. Deposition and characterization of ZnSe nanocrystalline thin films

    Science.gov (United States)

    Temel, Sinan; Gökmen, F. Özge; Yaman, Elif; Nebi, Murat

    2018-02-01

    ZnSe nanocrystalline thin films were deposited at different deposition times by using the Chemical Bath Deposition (CBD) technique. Effects of deposition time on structural, morphological and optical properties of the obtained thin films were characterized. X-ray diffraction (XRD) analysis was used to study the structural properties of ZnSe nanocrystalline thin films. It was found that ZnSe thin films have a cubic structure with a preferentially orientation of (111). The calculated average grain size value was about 28-30 nm. The surface morphology of these films was studied by the Field Emission Scanning Electron Microscope (FESEM). The surfaces of the thin films were occurred from small stacks and nano-sized particles. The band gap values of the ZnSe nanocrystalline thin films were determined by UV-Visible absorption spectrum and the band gap values were found to be between 2.65-2.86 eV.

  18. Synthesis, structure and optical properties of thin films form GeS2-In2S3 system deposited by thermal co-evaporation

    Czech Academy of Sciences Publication Activity Database

    Todorov, R.; Petkov, K.; Kincl, Miloslav; Černošková, E.; Vlček, Milan; Tichý, Ladislav

    2014-01-01

    Roč. 558, 2 May (2014), s. 298-305 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : chalcogenide glass es * thin films * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 1.759, year: 2014

  19. Thin films by metal-organic precursor plasma spray

    International Nuclear Information System (INIS)

    Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

    2009-01-01

    While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

  20. Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer

    NARCIS (Netherlands)

    Nakayama, Hiroyasu; Ye, Jianting; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Iwasa, Yoshihiro; Saitoh, Eiji

    Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with

  1. Nanocrystalline Pt-doped TiO2 thin films prepared by spray pyrolysis ...

    Indian Academy of Sciences (India)

    Administrator

    Nanocrystalline Pt-doped TiO2 thin films prepared by spray pyrolysis for hydrogen gas detection. LALCHAND A PATIL* .... tions of nanocrystalline TiO2 thin films using spray pyro- lysis. 2.4 Thickness and roughness determination of ... Electrical and gas sensing properties were measured using a static gas sensing system.

  2. A facile method for the density determination of ceramic thin films using X-ray reflectivity

    NARCIS (Netherlands)

    Veldhuis, Sjoerd; Brinks, Peter; Stawski, Tomasz; Göbel, Ole; ten Elshof, Johan E.

    2014-01-01

    A fast and non-destructive method based on X-ray reflectivity was developed to determine the density of sol–gel derived ceramic thin films, without prior assumptions on the microstructure of the system. The thin film density is calculated from the critical angle θc, i.e. the maximum angle at which

  3. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  4. Electrochemical processing of high-Tc Bi (Pb)–Sr–Ca–CuO thin films

    Indian Academy of Sciences (India)

    Superconducting thin films of Bi(Pb)–Sr–Ca–CuO system were prepared by depositing the film onto silver substrate by d.c. electrodeposition technique with dimethyl sulphoxide bath in order to examine the effect of Pb addition to the BSCCO system. The films were deposited at the potential of – 0.8 V vs saturated calomel ...

  5. Photoelectrochemical (PEC) studies on CdSe thin films ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Thin films of CdSe were deposited by potentiostatic mode on different substrates such as stainless steel, titanium and fluorine tin–oxide (FTO) coated glass using non-aqueous bath. The preparative parameters were optimized to get good quality CdSe thin films. These films were characterized by X-ray diffraction.

  6. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Infrared spectroscopic study reveals that films grown above 600°C are free of carbon. Keywords. MOCVD; thin films .... Simultaneous thermogravimetry and differential thermal analysis (TG/DTA) of the complex was carried ..... quality thin films of rare earth oxides by MOCVD, using the phenanthroline adducts of pentadionate ...

  7. Dynamics of a spreading thin film with gravitational counterflow ...

    Indian Academy of Sciences (India)

    In the present work, dynamics of a thin film spreading due to a thermocapillary stress is mod- eled within lubrication approximation. In microscale flows, the large surface to volume ratios allow interfacial stresses to exert a driving influence. This ability to drive thin film using thermo- capillary stress is used to spread film for ...

  8. Structural characterization of vacuum evaporated ZnSe thin films

    Indian Academy of Sciences (India)

    The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...

  9. Low cost thin film poly-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report presents the results of a project to design and develop a high density plasma based thin-film poly-silicon (TFPS) deposition system based on PQL proprietary advanced plasma technology to produce semiconductor quality TFPS for fabricating a TFPS solar cell. Details are given of the TFPS deposition system, the material development programme, solar cell structure, and cell efficiencies. The reproducibility of the deposition process and prospects for commercial exploitation are discussed.

  10. Polycrystalline thin-film technology: Recent progress in photovoltaics

    Science.gov (United States)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe2), cadmium telluride (CdTe), and thin film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin film CuInSe2, has made some rapid advances in terms of high efficiency and long term reliability. For CuInSe2 power modules, a world record has been reported on a 0.4 sq m module with an aperture-area efficiency of 10.4 pct. and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe2 modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 sq cm. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10 pct.; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  11. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  12. Porous Organic Cage Thin Films and Molecular-Sieving Membranes.

    Science.gov (United States)

    Song, Qilei; Jiang, Shan; Hasell, Tom; Liu, Ming; Sun, Shijing; Cheetham, Anthony K; Sivaniah, Easan; Cooper, Andrew I

    2016-04-06

    Porous organic cage molecules are fabricated into thin films and molecular-sieving membranes. Cage molecules are solution cast on various substrates to form amorphous thin films, with the structures tuned by tailoring the cage chemistry and processing conditions. For the first time, uniform and pinhole-free microporous cage thin films are formed and demonstrated as molecular-sieving membranes for selective gas separation. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Solution processed pentacene thin films and their structural properties

    International Nuclear Information System (INIS)

    Tao Chunlan; Zhang Xuhui; Zhang Fujia; Liu Yiyang; Zhang Haoli

    2007-01-01

    The paper reported the solution process of pentacene thin films from organic solvent O-dichlorobenzene. The pentacene thin films obtained from different conditions were characterized by X-ray diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), and UV-vis spectroscopy. The result shows that the pentacene solution was successfully obtained at a minimum temperature of 40 deg. C. The optimum temperature of forming pentacene thin films was 100 deg. C

  14. Review of the fundamentals of thin-film growth.

    Science.gov (United States)

    Kaiser, Norbert

    2002-06-01

    The properties of a thin film of a given material depend on the film's real structure. The real structure is defined as the link between a thin film's deposition parameters and its properties. To facilitate engineering the properties of a thin film by manipulating its real structure, thin-film formation is reviewed as a process starting with nucleation followed by coalescence and subsequent thickness growth, all stages of which can be influenced by deposition parameters. The focus in this review is on dielectric and metallic films and their optical properties. In contrast to optoelectronics all these film growth possibilities for the engineering of novel optical films with extraordinary properties are just beginning to be used.

  15. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  16. Progress on thin-film sensors for space propulsion technology

    Science.gov (United States)

    Kim, Walter S.

    1987-01-01

    The objective is to develop thin-film thermocouples for Space Shuttle Main Engine (SSME) components. Thin-film thermocouples have been developed for aircraft gas turbine engines and are in use for temperature measurement on turbine blades to 1800 F. The technology established for aircraft gas turbine engines will be adapted to the materials and environment encountered in the SSME. Specific goals are to expand the existing in-house thin-film sensor technology and to test the survivability and durability of thin-film sensors in the SSME environment.

  17. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  18. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  19. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  20. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  1. Seebeck effect of some thin film carbides

    International Nuclear Information System (INIS)

    Beensh-Marchwicka, G.; Prociow, E.

    2002-01-01

    Several materials have been investigated for high-temperature thin film thermocouple applications. These include silicon carbide with boron (Si-C-B), ternary composition based on Si-C-Mn, fourfold composition based on Si-C-Zr-B and tantalum carbide (TaC). All materials were deposited on quartz or glass substrates using the pulse sputter deposition technique. Electrical conduction and thermoelectric power were measured for various compositions at 300-550 K. It has been found, that the efficiency of thermoelectric power of films containing Si-C base composition was varied from 0.0015-0.034 μW/cmK 2 . However for TaC the value about 0.093 μW/cmK 2 was obtained. (author)

  2. TEM characterization of nanodiamond thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  3. Thin-Film Coated Plastic Wrap for Food Packaging

    Directory of Open Access Journals (Sweden)

    Hsin-Yu Wu

    2017-07-01

    Full Text Available In this study, the antimicrobial property and food package capability of polymethylpentene (PMP substrate with silicon oxdie (SiOx and organic silicon (SiCxHy stacked layers deposited by an inductively coupled plasma chemical vapor deposition system were investigated. The experimental results show that the stacked pair number of SiOx/SiCxHy on PMP is limited to three pairs, beyond which the films will crack and cause package failure. The three-pair SiOx/SiCxHy on PMP shows a low water vapor transmission rate of 0.57 g/m2/day and a high water contact angle of 102°. Three-pair thin-film coated PMP demonstrates no microbe adhesion and exhibits antibacterial properties within 24 h. Food shelf life testing performed at 28 °C and 80% humidity reports that the three-pair thin-film coated PMP can enhance the food shelf-life to 120 h. The results indicate that the silicon-based thin film may be a promising material for antibacterial food packaging applications to extend the shelf-life of food products.

  4. Thin Film Photovoltaics: Markets and Industry

    OpenAIRE

    Jäger-Waldau, Arnulf

    2012-01-01

    Since 2000, total PV production increased almost by two orders of magnitude, with a compound annual growth rate of over 52%. The most rapid growth in annual cell and module production over the last five years could be observed in Asia, where China and Taiwan together now account for about 60% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for s...

  5. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  6. Thin molecular films of supramolecular porphyrins

    Directory of Open Access Journals (Sweden)

    KOITI ARAKI

    2000-03-01

    Full Text Available A relevant series of symmetric supramolecular porphyrins has been obtained by attaching four [Ru II(bipy2Cl] groups to the pyridyl substituents of meso-tetra(4-pyridylporphyrin and its metallated derivatives. These compounds display a rich electrochemistry and versatile catalytic, electrocatalytic and photochemical properties, associated with the ruthenium-bipyridine and the porphyrin complexes. These properties can be transferred to the electrodes by attaching thin molecular films of the compounds, by dip-coating, electrostatic assembly or electropolymerization. In this way, the interesting properties of those supermolecules and supramolecular assemblies can be used to prepare molecular devices and sensors.

  7. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  8. High power impulse magnetron sputtering of CIGS thin films for high efficiency thin film solar cells

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Kohout, Michal; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    2014-01-01

    Roč. 1, č. 3 (2014), s. 135-137 ISSN 2336-2626 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HiPIMS * emission spectroscopy * thin films * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics http://fyzika.feld.cvut.cz/misc/ppt/articles/2014/olejnicek.pdf

  9. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    matrix. The methodology can be used to produce free-standing films. Optical limiting capability of the nanoparticle-embedded polymer film is demonstrated. Keywords. Polar crystal; uniaxial orientational order; thin film; second harmonic gen- eration; silver nanoparticle; polyvinyl alcohol; free-standing film; optical limiter.

  10. Methods for producing thin film charge selective transport layers

    Science.gov (United States)

    Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

    2018-01-02

    Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

  11. Neutron diffraction studies of thin film multilayer structures

    Energy Technology Data Exchange (ETDEWEB)

    Majkrzak, C.F.

    1985-01-01

    The application of neutron diffraction methods to the study of the microscopic chemical and magnetic structures of thin film multilayers is reviewed. Multilayer diffraction phenomena are described in general and in particular for the case in which one of the materials of a bilayer is ferromagnetic and the neutron beam polarized. Recent neutron diffraction measurements performed on some interesting multilayer systems are discussed. 70 refs., 5 figs.

  12. Neutron diffraction studies of thin film multilayer structures

    International Nuclear Information System (INIS)

    Majkrzak, C.F.

    1985-01-01

    The application of neutron diffraction methods to the study of the microscopic chemical and magnetic structures of thin film multilayers is reviewed. Multilayer diffraction phenomena are described in general and in particular for the case in which one of the materials of a bilayer is ferromagnetic and the neutron beam polarized. Recent neutron diffraction measurements performed on some interesting multilayer systems are discussed. 70 refs., 5 figs

  13. Thin-Film Evaporative Cooling for Side-Pumped Laser

    Science.gov (United States)

    Stewart, Brian K. (Inventor)

    2010-01-01

    A system and method are provided for cooling a crystal rod of a side-pumped laser. A transparent housing receives the crystal rod therethrough so that an annular gap is defined between the housing and the radial surface of the crystal rod. A fluid coolant is injected into the annular gap such the annular gap is partially filled with the fluid coolant while the radial surface of the crystal rod is wetted as a thin film all along the axial length thereof.

  14. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  15. The radiation response of mesoporous nanocrystalline zirconia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Manzini, Ayelén M.; Alurralde, Martin A. [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina); Giménez, Gustavo [Instituto Nacional de Tecnología Industrial - CMNB, Av. General Paz 5445, 1650 San Martín, Provincia de Buenos Aires (Argentina); Luca, Vittorio, E-mail: vluca@cnea.gov.ar [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina)

    2016-12-15

    The next generation of nuclear systems will require materials capable of withstanding hostile chemical, physical and radiation environments over long time-frames. Aside from its chemical and physical stability, crystalline zirconia is one of the most radiation tolerant materials known. Here we report the first ever study of the radiation response of nanocrystalline and mesoporous zirconia and Ce{sup 3+}-stabilized nanocrystalline zirconia (Ce{sub 0.1}Zr{sub 0.9}O{sub 2}) thin films supported on silicon wafers. Zirconia films prepared using the block copolymer Brij-58 as the template had a thickness of around 60–80 nm. In the absence of a stabilizing trivalent cation they consisted of monoclinic and tetragonal zirconia nanocrystals with diameters in the range 8–10 nm. Films stabilized with Ce{sup 3+} contained only the tetragonal phase. The thin films were irradiated with iodine ions of energies of 70 MeV and 132 keV at low fluences (10{sup 13} - 10{sup 14} cm{sup −2}) corresponding to doses of 0.002 and 1.73 dpa respectively, and at 180 keV and high fluences (2 × 10{sup 16} cm{sup −2}) corresponding to 82.4 dpa. The influence of heavy ion irradiation on the nanocrystalline structure was monitored through Rietveld analysis of grazing incidence X-ray diffraction (GIXRD) patterns recorded at angles close to the critical angle to ensure minimum contribution to the diffraction pattern from the substrate. Irradiation of the mesoporous nanocrystalline zirconia thin films with 70 MeV iodine ions, for which electronic energy loss is dominant, resulted in slight changes in phase composition and virtually no change in crystallographic parameters as determined by Rietveld analysis. Iodine ion bombardment in the nuclear energy loss regime (132–180 keV) at low fluences did not provoke significant changes in phase composition or crystallographic parameters. However, at 180 keV and high fluences the monoclinic phase was totally eliminated from the GIXRD

  16. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  17. Molecular Dynamics Simulation of Nanoindentation of Cu/Au Thin Films at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Qibin Li

    2016-01-01

    Full Text Available Two methods, deposition method and ideal modeling based on lattice constant, are used to prepare three modulation periods’ (1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au, and 3.6 nm Cu/1.8 nm Au thin films for nanoindentation at different temperatures. The results show that the temperature will weaken the hardness of thin films. The deposition method and the formation of coherent interface will result in a lot of defects in thin films. These defects can reduce the residual stress in the thin films which is caused by the external force. The proposed system will provide potential benefits in designing the microstructures for thin films.

  18. Engineering helimagnetism in MnSi thin films

    Directory of Open Access Journals (Sweden)

    S. L. Zhang

    2016-01-01

    Full Text Available Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

  19. Engineering helimagnetism in MnSi thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, S. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Chalasani, R.; Kohn, A. [Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv 6997801, Tel Aviv (Israel); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom); Steinke, N.-J. [ISIS, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0QX (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom)

    2016-01-15

    Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

  20. Thin films preparation of the Ti-Al-O system by rf-sputtering;Preparacion de peliculas delgadas del sistema Ti-Al-O mediante rf-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600 Altamira, Tamaulipas (Mexico); Manaud, J. P.; Lahaye, M. [Centre National de la Recherche Scientifique, Institut de Chimie de la Matiere Condensee, Universite Bordeaux I, 87, Av. du Dr. Schweitzer, F-33608 Pessac-Cedex (France); Munoz S, J., E-mail: jmontedeocacv@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico)

    2010-07-01

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti{sub 3}Al targets in a sputtering chamber with an Ar-O{sub 2} atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  1. Sputtered highly oriented PZT thin films for MEMS applications

    Science.gov (United States)

    Kalpat, Sriram S.

    Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

  2. Glassy dynamics and heterogeneity of polymer thin films

    International Nuclear Information System (INIS)

    Kanaya, Toshiji; Inoue, Rintaro; Kawashima, Kazuko; Miyazaki, Tsukasa; Matsuba, Go; Nishida, Koji; Tsukushi, Itaru; Shibata, Kaoru; Hino, Masahiro

    2009-01-01

    We review our recent studies on glassy dynamics and glass transition of polymer thin films using neutron and X-ray reflectivity and inelastic neutron techniques. In the last decade extensive studies have been performed on polymer thin films to reveal very interesting but unusual properties such as reduction in the glass transition temperature T g with film thickness and negative thermal expansivity for thin films below about 25 nm, and often some contradictory experimental results have been reported. It is believed that a key to solve the controversial situation is to disclose heterogeneous structure or multi-layer structure in polymer thin films. In the review, therefore, we summarize our recent experimental results by neutron and X-ray reflectivity and inelastic neutron scattering, focusing on the dynamic heterogeneity in polymer thin films. (author)

  3. Preparation and characterization of DC sputtered molybdenum thin films

    Directory of Open Access Journals (Sweden)

    Abd El-Hady B. Kashyout

    2011-03-01

    Full Text Available Molybdenum (Mo thin films have been deposited on soda-lime glass substrates using a DC magnetron sputtering system. Their electrical resistivity, and their morphological, structural and adhesive properties have been examined with respect to the deposition power, deposition time and substrate temperature. The electrical resistivity of the Mo films could be reduced by increasing any of the above parameters. Within the range of the investigated deposition parameters, the films showed a mono-crystalline nature with a preferred orientation along the (1 1 0 plane. The Mo films adhesion to the soda-lime glass could be improved by increasing the substrate temperature. At a deposition power of 200 W, deposition time of 20 min and substrate temperature of 450 °C, Mo thin film exhibiting mono-crystalline structure with thickness equal to 450 nm and electrical resistivity equal to 1.85 × 10−4 Ω cm was obtained.

  4. Gold Incorporated Mesoporous Silica Thin Film Model Surface as a Robust SERS and Catalytically Active Substrate

    Directory of Open Access Journals (Sweden)

    Anandakumari Chandrasekharan Sunil Sekhar

    2016-05-01

    Full Text Available Ultra-small gold nanoparticles incorporated in mesoporous silica thin films with accessible pore channels perpendicular to the substrate are prepared by a modified sol-gel method. The simple and easy spin coating technique is applied here to make homogeneous thin films. The surface characterization using FESEM shows crack-free films with a perpendicular pore arrangement. The applicability of these thin films as catalysts as well as a robust SERS active substrate for model catalysis study is tested. Compared to bare silica film our gold incorporated silica, GSM-23F gave an enhancement factor of 103 for RhB with a laser source 633 nm. The reduction reaction of p-nitrophenol with sodium borohydride from our thin films shows a decrease in peak intensity corresponding to –NO2 group as time proceeds, confirming the catalytic activity. Such model surfaces can potentially bridge the material gap between a real catalytic system and surface science studies.

  5. Ta-based amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    McGlone, John M., E-mail: mcglone@eecs.oregonstate.edu [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States); Olsen, Kristopher R. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Stickle, William F.; Abbott, James E.; Pugliese, Roberto A.; Long, Greg S. [Hewlett-Packard Company, Corvallis, OR, 97333 (United States); Keszler, Douglas A. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Wager, John F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States)

    2015-11-25

    With their lack of grains and grain boundaries, amorphous metals are known to possess advantageous mechanical properties and enhanced chemical stability relative to crystalline metals. Commonly, however, they exhibit poor high-temperature stability because of their metastable nature. Here, we describe two new Ta-based ternary metal thin films that retain thermal stability to 600 °C and above. The new thin-film compositions, Ta{sub 2}Ni{sub 2}Si{sub 1} and Ta{sub 2}Mo{sub 2}Si{sub 1}, are amorphous, exhibiting ultra-smooth surfaces (<0.4 nm) and resistivities typical of amorphous metals (224 and 177 μΩ cm, respectively). - Highlights: • New Ta-based amorphous metals were sputter deposited from individual targets. • As-deposited amorphous structure was confirmed through diffraction techniques. • Electrical and surface properties were characterized and possess smooth surfaces. • No evidence of crystallization up to 600 °C (TaNiSi) and 800 °C (TaMoSi). • Ultra-smooth surfaces remained unchanged up to crystallization temperature.

  6. Stable organic thin-film transistors

    Science.gov (United States)

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  7. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution in the infr......Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... characterized. Spectral responses are measured and in two types of measured GaAs solar cells (with Au and Ag nanoparticles) there was no clear efficiency enhancement in the NIR spectral range. In the case of Au nanoparticles it could be explained in similar way to the absorption data: the effect being broad...... cells spectral response to longer wavelengths, through possibly cheap and simple technologies: EBL can be substituted by colloidal solutions implementation and electroless plating is not expensive and results to be effective within a broad set of parameters (size, shape, density). Another application...

  8. Mesoscopic Percolating Resistance Network in a Strained Manganite Thin Film

    KAUST Repository

    Lai, K.

    2010-07-08

    Many unusual behaviors in complex oxides are deeply associated with the spontaneous emergence of microscopic phase separation. Depending on the underlying mechanism, the competing phases can form ordered or random patterns at vastly different length scales. By using a microwave impedance microscope, we observed an orientation-ordered percolating network in strained Nd 1/2Sr1/2MnO3 thin films with a large period of 100 nanometers. The filamentary metallic domains align preferentially along certain crystal axes of the substrate, suggesting the anisotropic elastic strain as the key interaction in this system. The local impedance maps provide microscopic electrical information of the hysteretic behavior in strained thin film manganites, suggesting close connection between the glassy order and the colossal magnetoresistance effects at low temperatures.

  9. A new lithography of functional plasma polymerized thin films

    International Nuclear Information System (INIS)

    Kim, Sung-O

    2001-01-01

    The preparation of the resist for the vacuum lithography was carried out by plasma polymerization. The resist manufactured by plasma polymerization is a monomer produced by MMA (Methyl methacrylate). The functional groups of MMA appeared in the PPMMA (Plasma Polymerized Methyl methacrylate) as well, and this was confirmed through an analysis using FT-IR. The polymerization rate increased as a function of the plasma power and decreased as a function of the system pressure. The sensitivity and contrast of the plasma polymerized thin films were 15 μC/cm2 and 4.3 respectively. The size of the pattern manufactured by Vacuum Lithography using the plasma polymerized thin films was 100 nm

  10. Mesoscopic percolating resistance network in a strained manganite thin film.

    Science.gov (United States)

    Lai, Keji; Nakamura, Masao; Kundhikanjana, Worasom; Kawasaki, Masashi; Tokura, Yoshinori; Kelly, Michael A; Shen, Zhi-Xun

    2010-07-09

    Many unusual behaviors in complex oxides are deeply associated with the spontaneous emergence of microscopic phase separation. Depending on the underlying mechanism, the competing phases can form ordered or random patterns at vastly different length scales. By using a microwave impedance microscope, we observed an orientation-ordered percolating network in strained Nd(1/2)Sr(1/2)MnO3 thin films with a large period of 100 nanometers. The filamentary metallic domains align preferentially along certain crystal axes of the substrate, suggesting the anisotropic elastic strain as the key interaction in this system. The local impedance maps provide microscopic electrical information of the hysteretic behavior in strained thin film manganites, suggesting close connection between the glassy order and the colossal magnetoresistance effects at low temperatures.

  11. An Integrated Laser-Induced Piezoelectric/Differential Confocal Surface Acoustic Wave System for Measurement of Thin Film Young’s Modulus

    Directory of Open Access Journals (Sweden)

    Xiaotang Hu

    2012-09-01

    Full Text Available The present paper presents the design and development results of a system setup for measuring Young’s modulus of thin films by laser-induced surface acoustic waves based on the integration of two detection methods, namely, piezoelectric transducer detection and differential confocal detection, which may be used for conducting consecutive or simultaneous measurements. After demonstrating the capabilities of each detection approach, it is shown how, depending on a wider range of applications, sample materials and measurement environments, the developed integrated system inherits and harnesses the main characteristics of its detection channels, resulting in an more practical and flexible equipment for determining Young’s modulus than traditional nanoindentation equipment, and also suitable for cross-validation purposes.

  12. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  13. Ultrashort pulse laser deposition of thin films

    Science.gov (United States)

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  14. The role of microstructural phenomena in magnetic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Laughlin, D.E.; Lambeth, D.N.

    1992-12-31

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  15. The role of microstructural phenomena in magnetic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Laughlin, D.E.; Lambeth, D.N.

    1992-01-01

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  16. Microstructure and mechanical behavior of thin films and inhomogeneous materials

    Science.gov (United States)

    Toivola, Yvete Aubrey

    In this work, processing-structure-property relationships of thin (˜1 mum) films are developed for materials with applications in microelectronics, microelectromechanical systems (MEMS), or magnetic data storage through experimental studies to optimize material properties and improve device performance and reliability. Variations in film microstructure were achieved through changes in deposition conditions, curing conditions, or through direct changes in material density or composition. Changes in material properties as a result of these (chemical, structural, or physical) modifications are quantified through experimental measurements. Changes in mechanical behavior are quantified through ("nano"-scale) instrumented depth-sensing indentation (DSI) experiments. Changes in material structure and composition are quantified by infrared spectroscopy, ellipsometry, ion beam analysis, scanning electron microscopy, and atomic force microscopy. Structure-properties relationships are developed for organosilicate-based dielectric materials for microelectronic interconnection arrays with a focus on maximizing film modulus and hardness while minimizing dielectric constant. Relationships between film properties and film structure with changes in deposition conditions are developed for low-pressure chemical vapor deposited silicon nitride films used in MEMS and microelectronics. Specifically, changes in film composition as a result of deposition conditions are related to changes in film stress. DSI is used to measure the contact responses of silica foam films and flexible magnetic data storage tape for which the microstructural inhomogeneities are comparable to the scale of the indentations. Images of residual indentation impressions are used to determine deformation mechanisms, and contact responses are interpreted by a new method. Differences in the deformation of magnetic data storage tape are quantified using DSI through previously developed deconvolution models and also

  17. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Headrick, Randall [Univ. of Vermont, Burlington, VT (United States)

    2016-03-18

    In this research program, we have explored the fundamental limits for thin film deposition in both crystalline and amorphous (i.e. non-crystalline) materials systems. For vacuum-based physical deposition processes such as sputter deposition, the background gas pressure of the inert gas (usually argon) used as the process gas has been found to be a key variable. Both a roughness transition and stress transition as a function of pressure have been linked to a common mechanism involving collisions of energetic particles from the deposition source with the process inert gas. As energetic particles collide with gas molecules in the deposition process they lose their energy rapidly if the pressure (and background gas density) is above a critical value. Both roughness and stress limit important properties of thin films for applications. In the area of epitaxial growth we have also discovered a related effect; there is a critical pressure below which highly crystalline layers grow in a layer-by-layer mode. This effect is also though to be due to energetic particle thermalization and scattering. Several other important effects such as the observation of coalescence dominated growth has been observed. This mode can be likened to the behavior of two-dimensional water droplets on the hood of a car during a rain storm; as the droplets grow and touch each other they tend to coalesce rapidly into new larger circular puddles, and this process proceeds exponentially as larger puddles overtake smaller ones and also merge with other large puddles. This discovery will enable more accurate simulations and modeling of epitaxial growth processes. We have also observed that epitaxial films undergo a roughening transition as a function of thickness, which is attributed to strain induced by the crystalline lattice mismatch with the substrate crystal. In addition, we have studied another physical deposition process called pulsed laser deposition. It differs from sputter deposition due to the

  18. Magnetism of FePt Thin Films

    Science.gov (United States)

    Alqhtany, Norah H.

    Materials with large magnetic anisotropy have received significant attention from the scientific community due to its advantages in technological applications. Equiatomic FePt has been identified as such a material which could possibly be a potential candidate for ultra- high density magnetic recording and other applications like permanent magnets. FePt thin films exhibit ordered L10 texture with high magnetocrystalline anisotropy and high saturation magnetization which seem lucrative for technological applications. This thesis presents an investigation of structural and magnetic properties of granular and epitaxial FePt films with L10 phase prepared by DC sputtering on different substrates (SrTiO3 and glass). X-ray Diffraction (XRD), Atomic Force Microscopy/Magnetic Force Microscopy (AFM/MFM) and Vibrating Sample Magnetometer (VSM) were employed in characterization process. The measurements obtained from these equipment were significant in establishing the relationship between the microstructure and the magnetic properties of these films. The symmetry and magnitude of magnetic anisotropy has also been analyzed and discussed in detail.

  19. Pressureless Bonding Using Sputtered Ag Thin Films

    Science.gov (United States)

    Oh, Chulmin; Nagao, Shijo; Suganuma, Katsuaki

    2014-12-01

    To improve the performance and reliability of power electronic devices, particularly those built around next-generation wide-bandgap semiconductors such as SiC and GaN, the bonding method used for packaging must change from soldering to solderless technology. Because traditional solders are problematic in the harsh operating conditions expected for emerging high-temperature power devices, we propose a new bonding method in this paper, namely a pressureless, low-temperature bonding process in air, using abnormal grain growth on sputtered Ag thin films to realize extremely high temperature resistance. To investigate the mechanisms of this bonding process, we characterized the microstructural changes in the Ag films over various bonding temperatures and times. We measured the bonding properties of the specimens by a die-shear strength test, as well as by x-ray diffraction measurements of the residual stress in the Ag films to show how the microstructural developments were essential to the bonding technology. Sound bonds with high die strength can be achieved only with abnormal grain growth at optimum bonding temperature and time. Pressureless bonding allows for production of reliable high-temperature power devices for a wide variety of industrial, energy, and environmental applications.

  20. Surface microtopography of thin silver films

    Science.gov (United States)

    Costa, Manuel F. M.; Almeida, Jose B.

    1991-01-01

    The authors present ne applications for the recently developed nori-contact optical inicrotopographer emphasizing the results of topographic inspections of thin silver films edges. These films were produced by sputtering of silver through different masks, using a planar magnetron source. The results show the influence ot the thickness and position of the masks on the topography of the film near its edge. Topographic information is obtained from the horizontal shift incurred by the bright spot on an horizontal surface, which is displaced vertically, when this is illuminated by an oblique collimated laser beam. The laser beam is focused onto the surface into a diffraction limited spot and is made to sweep the surface to be examined.. The horizontal position of the bright spot is continuously imaged onto a light detector array and the information about individual detectors that are activated is used to compute the corresponding horizontal shift on the reference plane. Simple trignometric calculations are used to relate the horizontal shift to the distance between the surface and a reference plane at each sampling point and thus a map of the surface topography can be built.

  1. Thinning and rupture of a thin liquid film on a heated surface

    Energy Technology Data Exchange (ETDEWEB)

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  2. Direct Immersion Annealing of Block Copolymer Thin Films

    Science.gov (United States)

    Karim, Alamgir

    We demonstrate ordering of thin block copolymer (BCP) films via direct immersion annealing (DIA) at enhanced rate leading to stable morphologies. The BCP films are immersed in carefully selected mixtures of good and marginal solvents that can impart enhanced polymer mobility, while inhibiting film dissolution. DIA is compatible with roll-to-roll assembly manufacturing and has distinct advantages over conventional thermal annealing and batch processing solvent-vapor annealing methods. We identify three solvent composition-dependent BCP film ordering regimes in DIA for the weakly interacting polystyrene -poly(methyl methacrylate) (PS -PMMA) system: rapid short range order, optimal long-range order, and a film instability regime. Kinetic studies in the ``optimal long-range order'' processing regime as a function of temperature indicate a significant reduction of activation energy for BCP grain growth compared to oven annealing at conventional temperatures. An attractive feature of DIA is its robustness to ordering other BCP (e.g. PS-P2VP) and PS-PMMA systems exhibiting spherical, lamellar and cylindrical ordering. Inclusion of nanoparticles in these films at high concentrations and fast ordering kinetics study with neutron reflectivity and SANS will be discussed. This is (late) Contributed Talk Abstract for Dillon Medal Symposium at DPOLY - discussed with DPOLY Chair Dvora Perahia.

  3. Factors affecting surface and release properties of thin PDMS films

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Junker, Michael Daniel; Skov, Anne Ladegaard

    2013-01-01

    Polydimethysiloxane (PDMS) elastomers are commonly used as dielectric electroactive polymers (DEAP). DEAP films are used in making actuators, generators and sensors. In the large scale manufacture of DEAP films, release of films from the substrate (carrier web) induces some defects and pre......-strain in the films which affect the overall performance of the films. The current research is directed towards investigating factors affecting the peel force and release of thin, corrugated polydimethylsiloxane films used in DEAP films. It has been shown that doping the PDMS films with small quantities...

  4. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  5. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  6. Magnetic thin films for high-density recording

    NARCIS (Netherlands)

    Lodder, J.C.

    1996-01-01

    Magnetic and magneto-optic recording technologies are continuing to evolve at a rapid pace resulting in longer playing times and more data being stored in ever decreasing volumes. Thin-film media are playing an important role in this process. Three different type of thin-film media are discussed

  7. Bonding of a niobium wire to a niobium thin film

    NARCIS (Netherlands)

    Jaszczuk, W.; Jaszczuk, W.; ter Brake, Hermanus J.M.; Flokstra, Jakob; Veldhuis, Dick; Stammis, R.; Rogalla, Horst

    1991-01-01

    A method for bonding a niobium wire to a niobium thin film is described. The bonds are to be used as superconducting connections between wire-wound gradiometers and thin-film coupling coils on DC SQUIDS. The method is characterized by two steps. Firstly, the hardness of the niobium wire is reduced

  8. Ferroelectricity in Sodium Nitrite Thin Films | Britwum | Journal of the ...

    African Journals Online (AJOL)

    Investigations have been conducted on the ferroelectric property of thin films of NaNO2. The thin films were prepared with the dip coating technique. The phase transition was investigated by observing the change in the dielectric constant with temperature change. The presence of ferro-electricity was investigated with a ...

  9. Electrical properties of epitaxially grown VOx thin films

    NARCIS (Netherlands)

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  10. Stoichiometry control in oxide thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, R.

    2017-01-01

    A general challenge in the synthesis of complex oxide nanostructures and thin films is the control of the stoichiometry and herewith control of thin film properties. Pulsed Laser Deposition (PLD) is widely known for its potential for growing near stoichiometric highly crystalline complex metal oxide

  11. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid

  12. Cadmium sulphide thin film for application in gamma radiation ...

    African Journals Online (AJOL)

    Cadmium Sulphide (CdS) thin film was prepared using pyrolytic spraying technique and then irradiated at varied gamma dosage. The CdS thin film absorption before gamma irradiation was 0.6497. Absorbed doses were computed using standard equation established for an integrating dosimeter. The plot of absorbed dose ...

  13. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    Transparent metal oxide thin films of samarium oxide (Sm 2 O 3 ) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure.

  14. Thermal properties and stabilities of polymer thin films

    International Nuclear Information System (INIS)

    Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa

    2009-01-01

    Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)

  15. Dip-coated hydrotungstite thin films as humidity sensors

    Indian Academy of Sciences (India)

    Unknown

    Dip-coated hydrotungstite thin films as humidity sensors. G V KUNTE, UJWALA AIL, S A SHIVASHANKAR and A M UMARJI*. Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India. MS received 6 December 2004; revised 28 February 2005. Abstract. Thin films of a hydrated phase of tungsten ...

  16. Thermal stability of gold-PS nanocomposites thin films

    Indian Academy of Sciences (India)

    Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...

  17. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

  18. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    Science.gov (United States)

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  19. Pilot-Scale Test Results Of A Thin Film Evaporator System For Management Of Liquid High-Level Wastes At The Hanford Site Washington USA -11364

    International Nuclear Information System (INIS)

    Corbett, J.E.; Tedesch, A.R.; Wilson, R.A.; Beck, T.H.; Larkin, J.

    2011-01-01

    A modular, transportable evaporator system, using thin film evaporative technology, is planned for deployment at the Hanford radioactive waste storage tank complex. This technology, herein referred to as a wiped film evaporator (WFE), will be located at grade level above an underground storage tank to receive pumped liquids, concentrate the liquid stream from 1.1 specific gravity to approximately 1.4 and then return the concentrated solution back into the tank. Water is removed by evaporation at an internal heated drum surface exposed to high vacuum. The condensed water stream will be shipped to the site effluent treatment facility for final disposal. This operation provides significant risk mitigation to failure of the aging 242-A Evaporator facility; the only operating evaporative system at Hanford maximizing waste storage. This technology is being implemented through a development and deployment project by the tank farm operating contractor, Washington River Protection Solutions (WRPS), for the Office of River Protection/Department of Energy (ORPIDOE), through Columbia Energy and Environmental Services, Inc. (Columbia Energy). The project will finalize technology maturity and install a system at one of the double-shell tank farms. This paper summarizes results of a pilot-scale test program conducted during calendar year 2010 as part of the ongoing technology maturation development scope for the WFE.

  20. Berkovich Nanoindentation on AlN Thin Films

    Directory of Open Access Journals (Sweden)

    Jian Sheng-Rui

    2010-01-01

    Full Text Available Abstract Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM and cross-sectional transmission electron microscopy (XTEM techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD derived Si-doped (2 × 1017 cm−3 GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

  1. Thermally stable antireflective coatings based on nanoporous organosilicate thin films.

    Science.gov (United States)

    Kim, Suhan; Cho, Jinhan; Char, Kookheon

    2007-06-05

    Thermally stable nanoporous organosilicate thin films were realized by the microphase separation of pore-generating polymers mixed with an organosilicate matrix to be antireflective coatings (ARCs), for which a thin film with a refractive index (n) of 1.23 for zero reflection is required. The refractive index of such nanoporous organosilicate films can be tuned from 1.39 down to 1.23 by incorporating nanopores within the films. With a nanoporous single layer with n approximately 1.23, the light transmittance of the glass above 99.8% was achieved in the visible range (lambda approximately 550 nm). To overcome the limitation on the narrow wavelength for high transmittance imposed by a single antireflective nanoporous thin film, bilayer thin films with different refractive indices were prepared by placing a high refractive index layer with a refractive index of 1.45 below the nanoporous thin film. UV-vis transmittance of a glass coated with the bilayer films was compared with nanoporous single-layer films and it is demonstrated that the novel broadband antireflection coatings in a wide range of visible wavelength can be easily obtained by the organosilicate bilayer thin films described in this study. Also, ARCs developed in this study demonstrate excellent AR durability owing to the hydrophobic nature of the organosilicate matrix.

  2. Modifying thin film diamond for electronic applications

    International Nuclear Information System (INIS)

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  3. Thin Films of Quasicrystals: Optical, Electronic, and Mechanical Properties

    Science.gov (United States)

    Symko, Orest G.

    1998-03-01

    In order to extend some of the unusual properties of quasicrystals toward practical applications and to study fundamental aspects of these properties, we have developed a technology for the deposition of high quality thin films of quasicrystals on a variety of substrates. Mechanical support for the thin films is provided by the substrate as bulk quasicrystals are brittle. We have applied the thin films to studies of their optical, electrical, and mechanical properties as well as to coatings of biomedical devices. An important characteristic of a quasicrystal is its pseudogap in the electronic density of states; it is determined directly from optical transmission measurements. Optical and mechanical characteristics of the thin films provide strong support for the cluster nature of quasicrystals and emphasize their importance for coatings. When used in biomedical devices, thin film quasicrystalline coatings show remarkable strength, low friction, and non-stick behavior. This work was in collaboration with W. Park, E. Abdel-Rahman, and T. Klein.

  4. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  5. Thermoluminescence of thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Escobar A, L.; Camps, E.; Arrieta, A.; Romero, S.; Gonzalez, P.R.; Olea M, O.; Diaz E, R.

    2003-01-01

    Materials in thin film form have received great attention in the last few years mainly because of their singular properties, which may differ significantly from their bulk attributes making them attractive for a wide variety of applications. In particular, thermoluminescence (Tl) properties of thin films have been studied recently owing to their potential applications in detection for both ionizing and non ionizing radiation. The aim of the present work is to report the synthesis and characterization of C Nx, aluminum oxide and titanium oxide thin films. Thermoluminescence response of the obtained thin films was studied after subject thin films to UV radiation (254 nm) as well as to gamma radiation (Co-60). Thermoluminescence glow curves exhibited a peak centered at 150 C for CN x whereas for titanium oxide the glow curve shows a maximum peaking at 171 C. Characterization of the physical properties of the deposited materials is presented. (Author)

  6. Thin films and coatings toughening and toughness characterization

    CERN Document Server

    Zhang, Sam

    2015-01-01

    Thin Films and Coatings: Toughening and Toughness Characterization captures the latest developments in the toughening of hard coatings and in the measurement of the toughness of thin films and coatings. Featuring chapters contributed by experts from Australia, China, Czech Republic, Poland, Singapore, Spain, and the United Kingdom, this first-of-its-kind book:Presents the current status of hard-yet-tough ceramic coatingsReviews various toughness evaluation methods for films and hard coatingsExplores the toughness and toughening mechanisms of porous thin films and laser-treated surfacesExamines

  7. Room temperature deposition of magnetite thin films on organic substrate

    International Nuclear Information System (INIS)

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  8. Stress relaxation and hillock growth in thin films

    International Nuclear Information System (INIS)

    Jackson, M.S.; Li, C.Y.

    1978-01-01

    The relaxation of thermal stress in a thin film adhering to a substrate of differing expansion coefficient is discussed. Good agreement is found between literature data on relaxation during isothermal anneals of Pb films at up to 350 0 K and model calculations based on a state variable description of plastic flow. The stress system during relaxation is explored, and the absence of diffusional creep is explained. The plasticity-dominated relaxation process suggested by this analysis is shown to be in good qualitative agreement with data on rapid relaxation over the course of a cycle between room and cryogenic temperatures. The implications of this for long-range material transport in the film are discussed. It is shown that hillock volume should increase over the course of a temperature cycle. Finally, a mechanism for hillock nucleation based on grain boundary sliding is suggested

  9. Industry-relevant magnetron sputtering and cathodic arc ultra-high vacuum deposition system for in situ x-ray diffraction studies of thin film growth using high energy synchrotron radiation

    OpenAIRE

    Schroeder, Jeremy; Thomson, W.; Howard, B.; Schell, N.; Näslund, Lars-Åke; Rogström, Lina; Johansson-Jöesaar, Mats P.; Ghafoor, Naureen; Odén, Magnus; Nothnagel, E.; Shepard, A.; Greer, J.; Birch, Jens

    2015-01-01

    We present an industry-relevant, large-scale, ultra-high vacuum (UHV) magnetron sputtering and cathodic arc deposition system purposefully designed for time-resolved in situ thin film deposition/annealing studies using high-energy (greater than50 keV), high photon flux (greater than10(12) ph/s) synchrotron radiation. The high photon flux, combined with a fast-acquisition-time (less than1 s) two-dimensional (2D) detector, permits time-resolved in situ structural analysis of thin film formation...

  10. Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

    International Nuclear Information System (INIS)

    Matsui, S.; Mori, Y.; Nonaka, T.; Hattori, T.; Kasamatsu, Y.; Haraguchi, D.; Watanabe, Y.; Uchiyama, K.; Ishikawa, M.

    2016-01-01

    For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

  11. Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, S., E-mail: smatsui@gpi.ac.jp; Mori, Y. [The Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsucho, Nishiku, Hamamatsu, Shizuoka 431-1202 (Japan); Nonaka, T.; Hattori, T.; Kasamatsu, Y.; Haraguchi, D.; Watanabe, Y.; Uchiyama, K.; Ishikawa, M. [Hamamatsu Photonics K.K. Electron Tube Division, 314-5 Shimokanzo, Iwata, Shizuoka 438-0193 (Japan)

    2016-05-15

    For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

  12. Comparison of Ultrasonic Welding and Thermal Bonding for the Integration of Thin Film Metal Electrodes in Injection Molded Polymeric Lab-on-Chip Systems for Electrochemistry

    Directory of Open Access Journals (Sweden)

    Marco Matteucci

    2016-10-01

    Full Text Available We compare ultrasonic welding (UW and thermal bonding (TB for the integration of embedded thin-film gold electrodes for electrochemical applications in injection molded (IM microfluidic chips. The UW bonded chips showed a significantly superior electrochemical performance compared to the ones obtained using TB. Parameters such as metal thickness of electrodes, depth of electrode embedding, delivered power, and height of energy directors (for UW, as well as pressure and temperature (for TB, were systematically studied to evaluate the two bonding methods and requirements for optimal electrochemical performance. The presented technology is intended for easy and effective integration of polymeric Lab-on-Chip systems to encourage their use in research, commercialization and education.

  13. PZT thin films for piezoelectric MEMS mechanical energy harvesting

    Science.gov (United States)

    Yeager, Charles

    This thesis describes the optimization of piezoelectric Pb(ZrxTi 1-x)O3 (PZT) thin films for energy generation by mechanical energy harvesting, and self-powered micro-electro-mechanical systems (MEMS). For this purpose, optimization of the material was studied, as was the incorporation of piezoelectric films into low frequency mechanical harvesters. A systematic analysis of the energy harvesting figure of merit was made. As a figure of merit (e31,ƒ)2/epsilon r (transverse piezoelectric coefficient squared over relative permittivity) was utilized. PZT films of several tetragonal compositions were grown on CaF2, MgO, SrTiO3, and Si substrates, thereby separating the dependence of composition on domain orientation. To minimize artifacts associated with composition gradients, and to extend the temperature growth window, PZT films were grown by metal organic chemical vapor deposition (MOCVD). Using this method, epitaxial {001} films achieved c-domain textures above 90% on single crystal MgO and CaF2 substrates. This could be tailored via the thermal stresses established by the differences in thermal expansion coefficients of the film and the substrate. The single-domain e31,ƒ for PZT thin films was determined to exceed -12 C/m2 in the tetragonal phase field for x ≥ 0.19, nearly twice the phenomenologically modeled value. The utilization of c-domain PZT films is motivated by a figure of merit above 0.8 C2/m4 for (001) PZT thin films. Increases to the FoM via doping and hot poling were also quantified; a 1% Mn doping reduced epsilonr by 20% without decreasing the piezoelectric coefficient. Hot poling a device for one hour above 120°C also resulted in a 20% reduction in epsilonr ; furthermore, 1% Mn doping reduced epsilonr by another 12% upon hot poling. Two methods for fabricating thin film mechanical energy harvesting devices were investigated. It was found that phosphoric acid solutions could be used to pattern MgO crystals, but this was typically accompanied by

  14. Structural features of spin-coated thin films of binary As{sub x}S{sub 100−x} chalcogenide glass system

    Energy Technology Data Exchange (ETDEWEB)

    Cook, J. [Austin Peay State University, Clarksville, TN 37075 (United States); Slang, S. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Golovchak, R. [Austin Peay State University, Clarksville, TN 37075 (United States); Jain, H. [International Materials Institute for New Functionality in Glass, Lehigh University, Bethlehem, PA 18015 (United States); Vlcek, M. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Kovalskiy, A., E-mail: kovalskyya@apsu.edu [Austin Peay State University, Clarksville, TN 37075 (United States)

    2015-08-31

    Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As{sub x}S{sub 100−x} (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface. - Highlights: • As–S spin-coated chalcogenide thin films with different As/S were fabricated. • XPS measurements support the cluster-like structure of spin-coated films. • As{sub 2}O{sub 3} was confirmed as the composition of precipitate formed during dissolution. • Lack of As–As bonds explains the observed photostability of the thin films.

  15. Controlled Topological Transitions in Thin-Film Phase Separation

    KAUST Repository

    Hennessy, Matthew G.

    2015-01-01

    © 2015 Society for Industrial and Applied Mathematics. In this paper the evolution of a binary mixture in a thin-film geometry with a wall at the top and bottom is considered. By bringing the mixture into its miscibility gap so that no spinodal decomposition occurs in the bulk, a slight energetic bias of the walls toward each one of the constituents ensures the nucleation of thin boundary layers that grow until the constituents have moved into one of the two layers. These layers are separated by an interfacial region where the composition changes rapidly. Conditions that ensure the separation into two layers with a thin interfacial region are investigated based on a phase-field model. Using matched asymptotic expansions a corresponding sharp-interface problem for the location of the interface is established. It is then argued that this newly created two-layer system is not at its energetic minimum but destabilizes into a controlled self-replicating pattern of trapezoidal vertical stripes by minimizing the interfacial energy between the phases while conserving their area. A quantitative analysis of this mechanism is carried out via a thin-film model for the free interfaces, which is derived asymptotically from the sharp-interface model.

  16. Size effects and electron microscopy of thin metal films. M.S. Thesis

    Science.gov (United States)

    Hernandez, J. D.

    1978-01-01

    All films were deposited by resistive heated evaporation in an oil diffusion pumped vacuum system (ultimate approx. equal to 0.0000001 torr). The growth from nuclei to a continuous film is highly dependent on the deposition parameters, evaporation rate as well as substrate material and substrate temperature. The growth stages of a film and the dependence of grain size on various deposition and annealing parameters are shown. Resistivity measurements were taken on thin films to observe size effects.

  17. Supercritical fluid molecular spray thin films and fine powders

    Science.gov (United States)

    Smith, Richard D.

    1988-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. The solvent is vaporized and pumped away. Solution pressure is varied to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solution temperature is varied in relation to formation of a two-phase system during expansion to control porosity of the film or powder. A wide variety of film textures and powder shapes are produced of both organic and inorganic compounds. Films are produced with regular textural feature dimensions of 1.0-2.0 .mu.m down to a range of 0.01 to 0.1 .mu.m. Powders are formed in very narrow size distributions, with average sizes in the range of 0.02 to 5 .mu.m.

  18. Novel photon management for thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  19. Measuring the Thickness and Elastic Properties of Electroactive Thin-film Polymers Using Platewave Dispersion Data

    Science.gov (United States)

    El-Azab, A.; Mal, A. K.; Bar-Cohen, Y.; Lih, S.

    1996-01-01

    Electroactive thin-film polymers are candidate sensors and actuators materials [1,2]. They are also finding a significant potential for applications in muscle mechanisms and micro-electro-mechanical systems (MEMS).

  20. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    Science.gov (United States)

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  1. Preparation and optical characterization of DNA-riboflavin thin films

    Science.gov (United States)

    Paulson, Bjorn; Shin, Inchul; Kong, Byungjoo; Sauer, Gregor; Dugasani, Sreekantha Reddy; Khazaeinezhad, Reza; Jung, Woohyun; Joo, Boram; Oh, Kyunghwan

    2016-09-01

    Thin films of DNA biopolymer thin film are fabricated by a drop casting process on glass and silicon substrates, as well as freestanding. The refractive index is measured by elliposmetry and in bulk DNA film the refractive index is shown to be increased in the 600 to 900 nm DNA transparency window by doping with riboflavin. Further analysis with FT-IR, Raman, and XRD are used to determine whether binding between riboflavin and DNA occurs.

  2. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  3. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  4. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  5. Printed Thin Film Transistors: Research from China.

    Science.gov (United States)

    Tong, Sichao; Sun, Jia; Yang, Junliang

    2018-03-01

    Thin film transistors (TFTs) have experienced tremendous development during the past decades and show great potential applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFTs components including semiconductors, dielectrics and electrodes, as well as fully-printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed as well.

  6. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    Chemical Properties ZnO occurs  as white powder  known  as  zinc white or  as  the mineral  zincite.  Zinc  oxide   is  an  amphoteric   oxide .  It  is...AFRL-OSR-VA-TR-2015-0044 Review of Zinc Oxide Thin Films Tom Otiti COLLEGE OF COMPUTING AND INFORMATION SCIENCE MAKERERE U Final Report 12/23/2014...COVERED (From - To)      01-07-2011 to 30-06-2014 4.  TITLE AND SUBTITLE ZINC OXIDE MATERIALS FOR PHOTOVOLTAIC APPLICATIONS 5a.  CONTRACT NUMBER 5b

  7. Amperometric noise at thin film band electrodes.

    Science.gov (United States)

    Larsen, Simon T; Heien, Michael L; Taboryski, Rafael

    2012-09-18

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive polymers and measured the current noise in physiological buffer solution for a wide range of different electrode areas. The noise measurements could be modeled by an analytical expression, representing the electrochemical cell as a resistor and capacitor in series. The studies revealed three domains; for electrodes with low capacitance, the amplifier noise dominated, for electrodes with large capacitances, the noise from the resistance of the electrochemical cell was dominant, while in the intermediate region, the current noise scaled with electrode capacitance. The experimental results and the model presented here can be used for choosing an electrode material and dimensions and when designing chip-based devices for low-noise current measurements.

  8. Experimental and ab initio investigations on textured Li–Mn–O spinel thin film cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, J., E-mail: Julian.Fischer@kit.edu [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Music, D. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 52074 Aachen (Germany); Bergfeldt, T.; Ziebert, C.; Ulrich, S.; Seifert, H.J. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2014-12-01

    This paper describes the tailored preparation of nearly identical lithium–manganese–oxide thin film cathodes with different global grain orientations. The thin films were synthesized by rf magnetron sputtering from a LiMn{sub 2}O{sub 4}-target in a pure argon plasma. Under appropriate processing conditions, thin films with a cubic spinel structure and a nearly similar density and surface topography but different grain orientation, i.e. (111)- and (440)-textured films, were achieved. The chemical composition was determined by inductively coupled plasma optical emission spectroscopy and carrier gas hot extraction. The constitution- and microstructure were evaluated by X-ray diffraction and Raman spectroscopy. The surface morphology and roughness were investigated by scanning electron and atomic force microscopy. The differently textured films represent an ideal model system for studying potential effects of grain orientation on the lithium ion diffusion and electrochemical behavior in LiMn{sub 2}O{sub 4}-based thin films. They are nearly identical in their chemical composition, atomic bonding behavior, surface-roughness, morphology and thickness. Our initial ab initio molecular dynamics data indicate that Li ion transport is faster in (111)-textured structure than in (440)-textured one. - Highlights: • Thin film model system of differently textured cubic Li–Mn–O spinels. • Investigation of the Li–Mn–O thin film mass density by X-ray reflectivity. • Ab initio molecular dynamics simulation on Li ion diffusion in LiMn{sub 2}O{sub 4}.

  9. Experimental and ab initio investigations on textured Li–Mn–O spinel thin film cathodes

    International Nuclear Information System (INIS)

    Fischer, J.; Music, D.; Bergfeldt, T.; Ziebert, C.; Ulrich, S.; Seifert, H.J.

    2014-01-01

    This paper describes the tailored preparation of nearly identical lithium–manganese–oxide thin film cathodes with different global grain orientations. The thin films were synthesized by rf magnetron sputtering from a LiMn 2 O 4 -target in a pure argon plasma. Under appropriate processing conditions, thin films with a cubic spinel structure and a nearly similar density and surface topography but different grain orientation, i.e. (111)- and (440)-textured films, were achieved. The chemical composition was determined by inductively coupled plasma optical emission spectroscopy and carrier gas hot extraction. The constitution- and microstructure were evaluated by X-ray diffraction and Raman spectroscopy. The surface morphology and roughness were investigated by scanning electron and atomic force microscopy. The differently textured films represent an ideal model system for studying potential effects of grain orientation on the lithium ion diffusion and electrochemical behavior in LiMn 2 O 4 -based thin films. They are nearly identical in their chemical composition, atomic bonding behavior, surface-roughness, morphology and thickness. Our initial ab initio molecular dynamics data indicate that Li ion transport is faster in (111)-textured structure than in (440)-textured one. - Highlights: • Thin film model system of differently textured cubic Li–Mn–O spinels. • Investigation of the Li–Mn–O thin film mass density by X-ray reflectivity. • Ab initio molecular dynamics simulation on Li ion diffusion in LiMn 2 O 4

  10. Detection of impact damage on thermal protection systems using thin-film piezoelectric sensors for integrated structural health monitoring

    Science.gov (United States)

    Na, Jeong K.; Kuhr, Samuel J.; Jata, Kumar V.

    2008-03-01

    Thermal Protection Systems (TPS) can be subjected to impact damage during flight and/or during ground maintenance and/or repair. AFRL/RXLP is developing a reliable and robust on-board sensing/monitoring capability for next generation thermal protection systems to detect and assess impact damage. This study was focused on two classes of metallic thermal protection tiles to determine threshold for impact damage and develop sensing capability of the impacts. Sensors made of PVDF piezoelectric film were employed and tested to evaluate the detectability of impact signals and assess the onset or threshold of impact damage. Testing was performed over a range of impact energy levels, where the sensors were adhered to the back of the specimens. The PVDF signal levels were analyzed and compared to assess damage, where digital microscopy, visual inspection, and white light interferometry were used for damage verification. Based on the impact test results, an assessment of the impact damage thresholds for each type of metallic TPS system was made.

  11. Optical properties of aluminum oxide thin films and colloidal nanostructures

    International Nuclear Information System (INIS)

    Koushki, E.; Mousavi, S.H.; Jafari Mohammadi, S.A.; Majles Ara, M.H.; Oliveira, P.W. de

    2015-01-01

    In this work, we prepared thin films of aluminum oxide (Al 2 O 3 ) with different thicknesses, using a wet chemical process. The Al 2 O 3 nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  12. Optical properties of aluminum oxide thin films and colloidal nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Koushki, E., E-mail: ehsan.koushki@yahoo.com [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Physics Department, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Mousavi, S.H. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Jafari Mohammadi, S.A. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Department of Chemistry, College of Science, Islamshahr Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Majles Ara, M.H. [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Oliveira, P.W. de [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany)

    2015-10-01

    In this work, we prepared thin films of aluminum oxide (Al{sub 2}O{sub 3}) with different thicknesses, using a wet chemical process. The Al{sub 2}O{sub 3} nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  13. Piezoelectric Response Evaluation of ZnO Thin Film Prepared by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Cheng Da-Long

    2017-01-01

    Full Text Available The most important parameter of piezoelectric materials is piezoelectric coefficient (d33. In this study, the piezoelectric ZnO thin films were deposited on the SiNx/Si substrate. The 4 inches substrate is diced into 8 cm× 8 cm piece. During the deposition process, a zinc target (99.999 wt% of 2 inches diameter was used. The vertical distance between the target and the substrate holder was fixed at 5 cm. The piezoelectric response of zinc oxide (ZnO thin films were obtained by using a direct measurement system. The system adopts a mini impact tip to generate an impulsive force and read out the piezoelectric signals immediately. Experimentally, a servo motor is used to produce a fixed quantity of force, for giving an impact against to the piezoelectric film. The ZnO thin films were deposited using the reactive radio frequency (RF magnetron sputtering method. The electric charges should be generated because of the material’s extrusion. This phenomenon was investigated through the oscilloscope by one shot trigger. It was apparent that all ZnO films exhibit piezoelectric responses evaluated by our measurement system, however, its exhibit a significant discrepancy. The piezoelectric responses of ZnO thin film at various deposition positions were measured and the crystal structures of the sputtering pressure were also discussed. The crystalline characteristics of ZnO thin films are investigated through the XRD and SEM. The results show the ZnO thin film exhibits good crystalline pattern and surface morphology with controlled sputtering condition. The ZnO thin films sputtered using 2 inches target present various piezoelectric responses. With the exactly related position, a best piezoelectric response of ZnO thin film can be achieved.

  14. Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

    2017-08-01

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

  15. Glass transition and thermal expansivity of polystyrene thin films

    International Nuclear Information System (INIS)

    Inoue, R.; Kanaya, T.; Miyazaki, T.; Nishida, K.; Tsukushi, I.; Shibata, K.

    2006-01-01

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T g and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements

  16. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  17. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  18. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S. [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  19. Dip-coated hydrotungstite thin films as humidity sensors

    Indian Academy of Sciences (India)

    Thin films of a hydrated phase of tungsten oxide, viz. hydrotungstite, have been prepared on glass substrates by dip-coating method using ammonium tungstate precursor solution. X-ray diffraction shows the films to have a strong -axis orientation. The resistance of the films is observed to be sensitive to the humidity content ...

  20. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  1. Strain-induced properties of epitaxial VOx thin films

    NARCIS (Netherlands)

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  2. Thin-film cryogenic resistors from aluminium alloys

    Science.gov (United States)

    Tadros, N. N.; Holdeman, L. B.

    The temperature dependence of the resistances of thin films sputtered from three commercially available aluminium alloys (5052, 5086, 5456) has been measured in the temperature range 1.5-4.2 K. The 5052-alloy films had a positive temperature coefficient of resistance (TCR) throughout this temperature range, whereas films of the other two alloys had a negative TCR.

  3. OPTIMISATION OF SPRAY DEPOSITED Sno2 THIN FILM FOR ...

    African Journals Online (AJOL)

    Dr Obe

    1987-09-01

    Sep 1, 1987 ... ABSTRACT. The use of conducting tin-oxide (SnO2 ) films for fabrication of solar cell is becoming increasingly important because of reasonably high efficiency and ease in fabrication. The role of the thin-oxide film is very critical for high efficiency. Resistivity, thickness and transmittance of the film should be ...

  4. Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

    Science.gov (United States)

    Beringer, Douglas B.

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

  5. PVD processes of thin films deposition using Hall-current discharge

    International Nuclear Information System (INIS)

    Svadkovskij, I.V.

    2007-01-01

    Results of research and developments in the field of PVD processes of thin films deposition using Hall-current discharge have been summarized. Effects of interaction of ions with surface during deposition have been considered. Also features of application and prospects of devices based on ion beam and magnetron sputtering systems in thin films technologies have been analyzed. The aspects in the field plasma physics, technology and equipment plasma PVD processes of thin films deposition have been systematized, on the base of investigations made by author and other scientists. (authors)

  6. Two-laser induced selective infrared-visible fluorescence for thin film analysis

    International Nuclear Information System (INIS)

    Richardson, J.H.; Dering, J.P.; Johnson, D.C.; Hrubesh, L.W.

    1980-01-01

    A laser technique has been developed to enhance its sensitivity for thin film analysis of mixtures. A c-w visible or uv laser was used to stimulate visible fluorescence from a thin fluorophor film, and a chopped low-power infrared laser was used to selectively excite characteristic infrared absorption bands in the sample. The resulting modulated visible fluorescence signal was monitored by an optical detection system. The technqiue has been applied to the quantitative determination of mixtures of coumarin 7, rubene, and rhodamine 6G; however, quantitative analysis has been impossible due to the difficulty in obtaining a uniform thin film

  7. Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

    Science.gov (United States)

    Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

    2016-07-01

    Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

  8. Piezoresistive cantilevers for characterizing thin-film gold electrical contacts

    Science.gov (United States)

    Pruitt, Beth L.

    The electronics packaging and testing industry is interested in new methods for making contacts to electronic chips to allow improvement or replacement of existing interconnect technologies. One approach involves the use of flexible contact structures integrated with the package or the testing apparatus which allow the device to be fully contacted by placing and pressing the interconnect array into contact. This technoOlogy depends on the properties of low-force electrical contacts. The research presented is a careful characterization of the electromechanical properties of such contacts, using instrumented MEMS force sensors. This work provides a sensor, measurement system and methodology for low force contact resistance data collection. This research includes the design, fabrication, and characterization of a micromechanical force sensor integrated with a 4-wire electrical contact characterization capability, a set of parametric measurements in the 10nN-10mN regime, and the development of qualitative design rules for small force thin film gold electrical contacts. The sensor consists of a silicon cantilever beam with a piezoresistive force sensor suitable for high-accuracy force measurements in the mN-nN range. The contact tips consist of a glass spheres for a controlled contact geometry as well as polystyrene spheres for highly-compliant contact structures. The contact halves are coated with varying thicknesses of evaporated, sputtered, or plated thin film gold. Combined with AFM scans and nanoindentation hardness measurements, correlations are found between the contact behavior, resistance measurements, and material characteristics over varied contact sizes, film types, thicknesses, and substrates. Mean stable contact resistance (elastic contact theory are attributed to the presence of asperities on the contact spheres, plasticity in the films, and differences in material properties for thin film vs. bulk form. The two most significant factors affecting contact

  9. Photoinduced conductivity in tin dioxide thin films

    International Nuclear Information System (INIS)

    Muraoka, Y.; Takubo, N.; Hiroi, Z.

    2009-01-01

    The effects of ultraviolet light irradiation on the conducting properties of SnO 2-x thin films grown epitaxially on TiO 2 or Al 2 O 3 single-crystal substrates are studied at room temperature. A large increase in conductivity by two to four orders of magnitude is observed with light irradiation in an inert atmosphere and remains after the light is removed. The high-conducting state reverts to the original low-conducting state by exposing it to oxygen gas. These reversible phenomena are ascribed to the desorption and adsorption of negatively charged oxygen species at the grain boundaries, which critically change the mobility of electron carriers already present inside grains by changing the potential barrier height at the grain boundary. The UV light irradiation provides us with an easy and useful route to achieve a high-conducting state even at low carrier density in transparent conducting oxides and also to draw an invisible conducting wire or a specific pattern on an insulating film.

  10. Electrodeposition of thin Pd-Ag films

    International Nuclear Information System (INIS)

    Hasler, P.; Allmendinger, T.

    1993-01-01

    Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

  11. Polymer Based Thin Film Screen Preparation Technique

    Science.gov (United States)

    Valais, I.; Michail, C.; Fountzoula, C.; Fountos, G.; Saatsakis, G.; Karabotsos, A.; Panayiotakis, G. S.; Kandarakis, I.

    2017-11-01

    Phosphor screens, mainly prepared by electrophoresis, demonstrate brightness equal to the standard sedimentation on glass or quartz substrate process and are capable of very high resolution. Nevertheless, they are very fragile, the shape of the screen is limited to the substrate shape and in order to achieve adequate surface density for application in medical imaging, a significant quantity of the phosphor will be lost. Fluorescent films prepared by the dispersion of phosphor particles into a polymer matrix could solve the above disadvantages. The aim of this study is to enhance the stability of phosphor screens via the incorporation of phosphor particles into a PMMA (PolyMethyl MethAcrylate) matrix. PMMA is widely used as a plastic optical fiber, it shows almost nearly no dispersion effects and it is transparent in the whole visible spectral range. Different concentrations of PMMA in MMA (Methyl Methacrylate) were examined and a 37.5 % w/w solution was used for the preparation of the thin polymer film, since optical quality characteristics were found to depend on PMMA in MMA concentration. Scanning Electron Microscopy (SEM) images of the polymer screens demonstrated high packing density and uniform distribution of the phosphor particles. This method could be potentially used for phosphor screen preparation of any size and shape.

  12. Growth, structuring and characterisation of all-oxide thin film devices prepared by pulsed laser deposition

    NARCIS (Netherlands)

    Cillessen, J.F.M.; Wolf, R.M.; Giesbers, J.B.; Blom, P.W.M.; Grosse Holz, K.O.; Pastoor, E.

    The combination of a variety of oxidic thin films in two materials systems is described. The first one focuses on the growth of BaZrO3 on SrTiO3 (both perovskites) and the use of these stacks as a substrate for the growth of magnetic ferrite spinel films. The second system shows the combination of

  13. Ferroelectric thin films for future thermonuclear reactor diagnostic applications

    International Nuclear Information System (INIS)

    Zauls, V.; Kundzins, K.; Aulika, I.; Kundzins, M.; Stenbergs, A.

    2006-01-01

    Full text: General overview of active material selection requirements for use in bolometric radiation diagnostics systems of future nuclear fusion reactors in comparison with our results of ferroelectric material based elements will be presented. Under modulated thermal irradiation bolometric sensitivity with the range of few mili-Kelvin temperature resolution at 0,2 s time response constant has been demonstrated by thin ferroelectric film capacitive sensor model on thick substrate. Sample measurement system has been developed to be compatible with Wheatstone bridge type bolometric heads measurement concept of ASDEX or ToreSupra reactor sites for future tests

  14. Contact mechanics studies of polymer thin film adhesion

    Science.gov (United States)

    McSwain, Rachel Lynn

    The work presented in this dissertation focuses on using the unique abilities of the JKR technique to probe the interfacial interactions of two independent polymer systems. To perform these studies, modifications were made to the JKR technique, including the integration of a thermal cycle to enable testing of thermally initiated interfacial interactions between two materials. Another enhancement of the JKR technique involved incorporation of cyclic testing to study crack growth under fatigue conditions. These additions to the JKR technique were used in the analysis of interfacial interactions of poly(tetramethyl bisphenol-A polycarbonate) (TMPC) and poly(ethylene oxide) (PEO). Adhesion tests were performed on thin layers of PEO sandwiched between layers of TMPC, which were heated in contact above the melting temperature of the PEO and cooled back to room temperature before a cyclic fatigue test was performed. Additional characterization of the bulk and interfacial properties of this blend showed that these two polymers are miscible. From these studies, the interfacial interaction of the TMPC and PEO was found to be controlled by the PEO-mediated mixing of the TMPC layers. In a second set of experiments, a model film consisting of a layer of acrylic diblock copolymer micelles was used to study the processes involved in the transfer of a viscoelastic film from a weakly adhesive elastomer substrate to a more strongly adhesive hemispherical glass indenter. Transfer of the film during tensile loading of the indenter began with expansion of a cavity at the film/elastomer interface, followed by subsequent delamination of the film at this interface. Criteria for cavity expansion and delamination are expressed in terms of the energy release rate. The critical energy release rate for cavity expansion increases linearly with the film thickness. A critical film thickness was identified above which films are able to peel from the elastomeric substrate over a region outside the

  15. Failure and fracture of thin film materials for MEMS

    Science.gov (United States)

    Jonnalagadda, Krishna Nagasai

    Design and reliable operation of Microelectromechanical systems (MEMS) depend on the material parameters that influence the failure and fracture properties of brittle and metallic thin films. Failure in brittle materials is quantified by the onset of catastrophic fracture, while in metals, the onset of inelastic deformation is considered as failure as it increases the material compliance. This dissertation research developed new experimental methods to address three aspects on the failure response of these two categories of materials: (a) the role of microstructure and intrinsic stress gradients in the opening mode fracture of mathematically sharp pre-cracks in amorphous and polycrystalline brittle thin films, (b) the critical conditions for mixed mode I/II pre-cracks and their comparison with linear elastic fracture mechanics (LEFM) criteria for crack initiation in homogeneous materials, and (c) the strain rate sensitivity of textured nanocrystalline Au and Pt films with grain sizes of 38 nm and 25 nm respectively. One of the technical objectives of this research was to develop experimental methods and tools that could become standards in MEMS and thin film experimental mechanics. In this regard, a new method was introduced to conduct mode I and mixed mode I/II fracture studies with microscale thin film specimens containing sharp edge pre-cracks. The mode I experiments permitted the direct application of LEFM handbook solutions. On the other hand, the newly introduced mixed mode I/II experiments in thin films were conducted by establishing a new protocol that employs non-standard oblique edge pre-cracks and a numerical analysis based on the J-integral to calculate the stress intensity factors. Similarly, a new experimental protocol has been implemented to carry out experiments with metallic thin films at strain rates that vary by more than six orders of magnitude. The results of mode I fracture experiments concluded that grain inhomogeneity in polycrystalline

  16. Thin film technologies at the Institute of Nuclear Physics

    International Nuclear Information System (INIS)

    Tuleushev, A.Zh.

    2004-01-01

    At present the Institute of Nuclear Physics of the National Nuclear Center of the Republic of Kazakhstan is the recognized centre on development of researches and technical works in the field of ion-plasma materials testing. The Institute is maintaining the business contacts both the Republic of Kazakhstan and a broad. A large volume of the engineering designs on implementation of the unique direct current magnetron spraying systems, and ion-plasma spaying facilities with electro-conductive materials and equipment servicing for its were preceded to a formation and development of the thin-film technologies. The first one among designed ion-plasma technologies has been fabricated precious metals covering at the Ulba Metallurgical Work in 1996. And the second technology of the titanium nitride coverings is using at present in the dental practice. In the framework of the ISTC project in collaboration with the LANL the studies on the beryllium coverings manufacture and examination of their properties were carried out. The continuation of these researches is the implementation technology for beryllium foil fabrication by metal magnetron straying with subsequent deposition it on the specially prepared surface (for adhesion minimization). Also the studies on development of the film superconductors on niobium nitride base by reactive spraying of niobium in the nitrogen containing plasma formation gas and niobium intermetallic compounds - niobium stannide and niobium aluminide were started. In the result of these the technologies of the given ribbon superconductors in the film form with high critical characteristics - with inter-metalloids temperature were reduced on 300-400 deg C - were worked out. Researches in this field allow to synthesize the few new early unknown superconductive intermetallic compounds (Ta 3 Pb, Nb 3 Be - A15, Nb 3 Be - cube), and to determine the structure and critical properties of thin-film coverings on the its base. Modernization of the magnetron

  17. Plasma polymerised thin films for flexible electronic applications

    International Nuclear Information System (INIS)

    Jacob, Mohan V.; Olsen, Natalie S.; Anderson, Liam J.; Bazaka, Kateryna; Shanks, Robert A.

    2013-01-01

    The significant advancement and growth of organic and flexible electronic applications demand materials with enhanced properties. This paper reports the fabrication of a nonsynthetic polymer thin film using radio frequency plasma polymerisation of 3,7-dimethyl-1,6-octadien-3-ol. The fabricated optically transparent thin film exhibited refractive index of approximately 1.55 at 500 nm and rate of deposition was estimated to be 40 nm/min. The surface morphology and chemical properties of the thin films were also reported in this paper. The optical band gap of the material is around 2.8 eV. The force of adhesion and Young's modulus of the linalool polymer thin films were measured using force-displacement curves obtained from a scanning probe microscope. The friction coefficient of linalool polymer thin films was measured using the nanoscratch test. The calculated Young's modulus increased linearly with increase in input power while the friction coefficient decreased. - Highlights: • Fabrication of a novel polymer thin film from non-synthetic source • The surface, optical and chemical properties are reported. • The fabricated thin film is transparent and smooth. • An environmentally friendly material • Candidate for flexible electronics as dielectric layer or as an encapsulation layer

  18. Plasma polymerised thin films for flexible electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, Mohan V., E-mail: mohan.jacob@jcu.edu.au [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Olsen, Natalie S.; Anderson, Liam J.; Bazaka, Kateryna [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Shanks, Robert A. [Applied Sciences, RMIT University, GPO Box 2476V, Melbourne 3001 (Australia)

    2013-11-01

    The significant advancement and growth of organic and flexible electronic applications demand materials with enhanced properties. This paper reports the fabrication of a nonsynthetic polymer thin film using radio frequency plasma polymerisation of 3,7-dimethyl-1,6-octadien-3-ol. The fabricated optically transparent thin film exhibited refractive index of approximately 1.55 at 500 nm and rate of deposition was estimated to be 40 nm/min. The surface morphology and chemical properties of the thin films were also reported in this paper. The optical band gap of the material is around 2.8 eV. The force of adhesion and Young's modulus of the linalool polymer thin films were measured using force-displacement curves obtained from a scanning probe microscope. The friction coefficient of linalool polymer thin films was measured using the nanoscratch test. The calculated Young's modulus increased linearly with increase in input power while the friction coefficient decreased. - Highlights: • Fabrication of a novel polymer thin film from non-synthetic source • The surface, optical and chemical properties are reported. • The fabricated thin film is transparent and smooth. • An environmentally friendly material • Candidate for flexible electronics as dielectric layer or as an encapsulation layer.

  19. Thin Film Evaporation of Receding Meniscus within Micro Pillar Arrays

    Science.gov (United States)

    Alhosani, Mohamed H.; Alsheghri, Ammar A.; Alghaferi, Amal; Zhang, Tiejun

    2015-03-01

    Evaporation is a key process in power generation, water desalination, and thermal management applications. It has been proved that hydrophilic micro structured surfaces can enhance the convection heat transfer by promoting high-performance thin film evaporation and enlarging the total heat transfer surface area. When depositing a water droplet on hydrophilic structured surfaces, two distinct regions can be observed, a) central region with water level higher than the micro pillar height (droplet region), b) thin film region as a result of liquid meniscus receding among micro structures. In this study, we are able to probe the physics of thin film evaporation of receding liquid meniscus among micro pillar arrays with different pillar heights, spacings and diameters. Heat transfer is systematically studied in the droplet and thin film region for each sample. Also, Young-Laplace equation and kinetic theory of mass transport are used to model the thin film evaporation around micro pillars. With the proposed model, the shape of meniscus around micro pillars and the diameter of droplet/extended thin film region can be predicted and compared with the experimental measurement. The model can also be extended to model thin film evaporation of meniscus within nano structured surfaces. Supported by cooperative agreement between Masdar Inst and MIT.

  20. Resistivity of thiol-modified gold thin films

    International Nuclear Information System (INIS)

    Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

    2014-01-01

    In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography

  1. Thin film flow along a periodically-stretched elastic beam

    Science.gov (United States)

    Boamah Mensah, Chris; Chini, Greg; Jensen, Oliver

    2017-11-01

    Motivated by an application to pulmonary alveolar micro-mechanics, a system of partial differential equations is derived that governs the motion of a thin liquid film lining both sides of an inertia-less elastic substrate. The evolution of the film mass distribution is described by invoking the usual lubrication approximation while the displacement of the substrate is determined by employing a kinematically nonlinear Euler-Bernoulli beam formulation. In the parameter regime of interest, the axial strain can be readily shown to be a linear function of arc-length specified completely by the motion of ends of the substrate. In contrast, the normal force balance on the beam yields an equation for the substrate curvature that is fully coupled to the time-dependent lubrication equation. Linear analyses of both a stationary and periodically-stretched flat substrate confirm the potential for buckling instabilities and reveal an upper bound on the dimensionless axial stiffness for which the coupled thin-film/inertial-less-beam model is well-posed. Numerical simulations of the coupled system are used to explore the nonlinear development of the buckling instabilities.

  2. Multifunctional Parylene-C Microfibrous Thin Films

    Science.gov (United States)

    Chindam, Chandraprakash

    Towards sustainable development, multifunctional products have many advantageous over single-function products: reduction in number of parts, raw material, assembly time, and cost involved in a product's life cycle. My goal for this thesis was to demonstrate the multifunctionalities of Parylene-C microfibrous thin films. To achieve this goal, I chose Parylene C, a polymer, because the fabrication of periodic mediums of Parylene C in the form of microfibrous thin films (muFTFs) was already established. A muFTFs is a parallel arrangement of identical micrometer-sized fibers of shapes cylindrical, chevronic, or helical. Furthermore, Parylene C had three existing functions: in medical-device industries as corrosion-resistive coatings, in electronic industries as electrically insulating coatings, and in biomedical research for tissue-culture substrates. As the functionalities of a material are dependent on the microstructure and physical properties, the investigation made for this thesis was two-fold: (1) Experimentally, I determined the wetting, mechanical, and dielectric properties of columnar muFTFs and examined the microstructural and molecular differences between bulk films and muFTFs. (2) Using physical properties of bulk film, I computationally determined the elastodynamic and determined the electromagnetic filtering capabilities of Parylene-C muFTFs. Several columnar muFTFs of Parylene C were fabricated by varying the monomer deposition angle. Following are the significant experimental findings: 1. Molecular and microstructural characteristics: The dependence of the microfiber inclination angle on the monomer deposition angle was classified into four regimes of two different types. X-ray diffraction experiments indicated that the columnar muFTFs contain three crystal planes not evident in bulk Parylene-C films and that the columnar muFTFs are less crystalline than bulk films. Infrared absorbance spectra revealed that the atomic bonding is the same in all

  3. Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

    International Nuclear Information System (INIS)

    Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

  4. Stability of tetraphenyl butadiene thin films in liquid xenon

    International Nuclear Information System (INIS)

    Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.

    2016-01-01

    Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.

  5. Buckling of Thin Films in Nano-Scale

    Directory of Open Access Journals (Sweden)

    Li L.A.

    2010-06-01

    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  6. Buckling of Thin Films in Nano-Scale

    Science.gov (United States)

    Wang, S.; Jia, H. K.; Sun, J.; Ren, X. N.; Li, L. A.

    2010-06-01

    Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  7. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  8. Rapid protein immobilization for thin film continuous flow biocatalysis.

    Science.gov (United States)

    Britton, Joshua; Raston, Colin L; Weiss, Gregory A

    2016-08-09

    A versatile enzyme immobilization strategy for thin film continuous flow processing is reported. Here, non-covalent and glutaraldehyde bioconjugation are used to immobilize enzymes on the surfaces of borosilicate reactors. This approach requires only ng of protein per reactor tube, with the stock protein solution readily recycled to sequentially coat >10 reactors. Confining reagents to thin films during immobilization reduced the amount of protein, piranha-cleaning solution, and other reagents by ∼96%. Through this technique, there was no loss of catalytic activity over 10 h processing. The results reported here combines the benefits of thin film flow processing with the mild conditions of biocatalysis.

  9. Plasma polymerized hexamethyldisiloxane thin films for corrosion protection

    Science.gov (United States)

    Saloum, S.; Alkhaled, B.; Alsadat, W.; Kakhia, M.; Shaker, S. A.

    2018-01-01

    This study focused on the corrosion protection performance of plasma polymerized HMDSO thin films in two different corrosive medias, 0.3M NaCl and 0.3M H2SO4. The pp-HMDSO thin films were deposited on steel substrates for electrochemical tests using the potentiodynamic polarization technique, they were deposited also on aluminum and silicon substrates to investigate their resistance to corrosion, through the analysis of the degradation of microhardness and morphology, respectively, after immersion of the substrates for one week in the corrosive media. The results showed promising corrosion protection properties of the pp-HMDSO thin films.

  10. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  11. Organic nanostructured thin film devices and coatings for clean energy

    CERN Document Server

    Zhang, Sam

    2010-01-01

    Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films and coatings, while the third volume explores the cutting-edge organic nanostructured devices used to produce clean energy. This third volume, Organic Nanostructured Thin Film Devices and Coatings for Clean Energy, addresses various aspects of the proc

  12. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  13. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  14. Thin film adhesion modification by MeV ions

    International Nuclear Information System (INIS)

    Sugden, S.

    1991-08-01

    The adhesion of thin films, and in particular the way in which such adhesion may be improved by irradiation, is rather poorly understood. The radiation enhanced adhesion effect has been investigated through the use of Ultra High Vacuum sample preparation, analysis and irradiation techniques, in order to gain control over surface and interface composition. In the systems studied, Au on Ta, Au on Si and Ag on Si, films deposited on atomically clean surfaces show good adhesion, and no evidence of enhancement due to irradiation is observed in the case of such clean interfaces. The results are entirely consistent with radiation enhanced adhesion being due to radiolytic effects on contaminant containing layers at the film/substrate interface. In addition, on silicon substrates the observations highlight the superiority of thermal cleaning over low energy sputtering as a route for producing a clean surface. A model of the radiation enhanced adhesion observations for dirty interface systems is developed, which takes into account the two dimensional nature of the ion energy deposition process. All the observations on such systems are broadly consistent with an activation energy for the process of approximately 5 eV. This value is sufficiently large to bring about chemical bonding rearrangement at the critical film/substrate interface. (Author)

  15. Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

    Directory of Open Access Journals (Sweden)

    Yaodong Yang

    2010-01-01

    Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

  16. Electron cyclotron resonance microwave ion sources for thin film processing

    International Nuclear Information System (INIS)

    Berry, L.A.; Gorbatkin, S.M.

    1990-01-01

    Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl base etching of Si using an ECR system are presented. 32 refs., 5 figs

  17. Tools to synthesize the learning of thin films

    International Nuclear Information System (INIS)

    Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.

  18. Radiation Effects in Interfaces and Thin Films

    Science.gov (United States)

    Mairov, Alexander

    One of the key approaches to developing materials with greater radiation damage resistance is to introduce a large fraction of internal interfaces. Interfaces act as sinks for recombination of radiation-induced defects and as sites for accumulation of helium bubbles, thereby diverting them away from grain boundaries, where they can induce embrittlement. The beneficial role of interfaces in mitigating radiation damage has been demonstrated in nanoscale multilayered structures and in nanograined materials. Another more common example is oxide dispersion strengthened (ODS) steels and nanostructured ferritic alloys (NFA) where a fine distribution of particles (clusters) of varying stoichiometries (e.g., Y2Ti2O7, Y2TiO 5, Y2O3, TiO2 and Y-Ti-O non-stoichiometric oxides) not only confer high creep strength, but also high radiation damage tolerance due to the large area of metal/oxide interfaces. However, the efficacy of these interfaces to act as defect sinks depends on their compositional and physical stability under radiation. With this background, this work focused on the stability of interfaces between Ti, TiO2, and Y2O 3 thin film deposited on Fe-12%Cr substrates after irradiation with 5MeV Ni+2 ions at various temperatures. TEM and STEM-EDS methods were used to understand the compositional changes at the interfaces. Additionally, accumulation of implanted helium at epitaxial and non-epitaxial Fe/Y 2O3 interfaces was also studied. Finally, the study was extended to study irradiation effects (up to 150 dpa) in novel Al2O 3 nanoceramic films with immediate potential applications as coatings for corrosion protection in the harsh high temperature environments of Gen IV reactors. This research is expected to have implications in the development of radiation damage tolerant nanostructured alloys for nuclear reactors while also expanding the scientific knowledge-base in the area of radiation stability of interfaces in solids and protective coatings.

  19. Magnesium Diboride thin Films, multilayers, and coatings for SRF cavities

    Energy Technology Data Exchange (ETDEWEB)

    Xi, Xiaoxing [Temple Univ., Philadelphia, PA (United States)

    2017-08-17

    achieved by using in both epitaxial and polycrystalline MgB2 films. Although Hc1 is low for bulk MgB2 samples, about 600 Oe at 5 K, it increases with decreasing film thickness, reaching 1880 Oe when the film thickness is 100 nm. Two, we coated Nb ellipsoids with MgB2 films to achieve an “inverse cavity” configuration, mimicking the coating of an actual RF cavity. Our results demonstrate that it is indeed possible to increase the vortex penetration field of a cavity by a substantial amount (~600 Oe) by coating it with a thin MgB2 film. For the second objective, we modified the existing HPCVD system to be able to coat a 3.9 GHz SRF cavity, and using a stainless steel mock cavity showed that a uniform film with good superconducting property can be grown across the cavity interior. Further, we successfully deposited MgB2 on Cu disc. The two results combined demonstrate that it is possible to coat Cu cavities with high quality MgB2 films using HPCVD. MgB2 coated Cu could open up a possibility of using SRF cavities at 20–25 K with cryocoolers.

  20. Electrochromic performances of nonstoichiometric NiO thin films

    International Nuclear Information System (INIS)

    Moulki, H.; Faure, C.; Mihelčič, M.; Vuk, A. Šurca; Švegl, F.; Orel, B.; Campet, G.; Alfredsson, M.; Chadwick, A.V.; Gianolio, D.; Rougier, A.

    2014-01-01

    Electrochromic (EC) performances of Ni 3+ containing NiO thin films, called modified NiO thin films, prepared either by pulsed laser deposition or by chemical route are reported. When cycled in lithium based electrolyte, the comparison of the EC behavior of nonstoichiometric NiO thin films points out a larger optical contrast for the films synthesized by chemical route with the absence of an activation period on early electrochemical cycling due in particular to a larger porosity. Herein we demonstrate faster kinetics for modified NiO thin films cycled in lithium ion free electrolyte. Finally, X-ray absorption spectroscopy is used for a preliminary understanding of the mechanism involved in this original EC behavior linked to the film characteristics including their disorder character, the presence of Ni 3+ and their porous morphology. - Highlights: • Nonstoichiometric NiO thin films • Electrochromic performances in lithium free electrolyte • X-ray absorption spectroscopy investigation of as-deposited films and upon cycling

  1. An alternative sol-gel route for the preparation of thin films in CeO2-TiO2 binary system

    International Nuclear Information System (INIS)

    Kidchob, Tongjit; Malfatti, Luca; Marongiu, Daniela; Enzo, Stefano; Innocenzi, Plinio

    2010-01-01

    Thin films of titania-ceria have been prepared via sol-gel processing by employing titanium and cerium chloride compounds in highly acidic conditions for the precursor sol. This sol-gel route allows obtaining titania-ceria and cerium titanate films, CeTi 2 O 6 , after thermal treatment in air. The films exhibit a high optical transparency which is modulated by controlling the composition and the thermal treatment. The materials have been characterized by X-ray diffraction, UV-visible spectroscopy, ellipsometric spectroscopy and atomic force microscopy. The titania-ceria films show, as a function of the composition, the formation of different phases after thermal treatment in air at 800 o C. In particular, with the composition Ce25-Ti75 we have obtained a pure cerium titanate phase, CeTi 2 O 6 , which can be formed only in a very strict range of compositions.

  2. An alternative sol-gel route for the preparation of thin films in CeO{sub 2}-TiO{sub 2} binary system

    Energy Technology Data Exchange (ETDEWEB)

    Kidchob, Tongjit; Malfatti, Luca; Marongiu, Daniela [Laboratorio di Scienza dei Materiali e Nanotecnologie, D.A.P., Universita di Sassari and CR-INSTM, Palazzo Pou Salid, Piazza Duomo 6, 07041 Alghero (Italy); Enzo, Stefano [Dipartimento di Chimica, Universita di Sassari, Via Vienna 2, 07100 Sassari (Italy); Innocenzi, Plinio, E-mail: plinio@uniss.i [Laboratorio di Scienza dei Materiali e Nanotecnologie, D.A.P., Universita di Sassari and CR-INSTM, Palazzo Pou Salid, Piazza Duomo 6, 07041 Alghero (Italy)

    2010-01-01

    Thin films of titania-ceria have been prepared via sol-gel processing by employing titanium and cerium chloride compounds in highly acidic conditions for the precursor sol. This sol-gel route allows obtaining titania-ceria and cerium titanate films, CeTi{sub 2}O{sub 6}, after thermal treatment in air. The films exhibit a high optical transparency which is modulated by controlling the composition and the thermal treatment. The materials have been characterized by X-ray diffraction, UV-visible spectroscopy, ellipsometric spectroscopy and atomic force microscopy. The titania-ceria films show, as a function of the composition, the formation of different phases after thermal treatment in air at 800 {sup o}C. In particular, with the composition Ce25-Ti75 we have obtained a pure cerium titanate phase, CeTi{sub 2}O{sub 6}, which can be formed only in a very strict range of compositions.

  3. Preparation of manganese-doped ZnO thin films and their ...

    Indian Academy of Sciences (India)

    Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing ... SILAR; Mn:ZnO thin film; X-ray line broadening; SEM; optical bandgap. 1. Introduction. Zinc oxide is a II–IV ... potential in different applications in photo-thermal conver- sion systems, heat mirrors, ...

  4. Thermal stability, microstructure and mechanical properties of Ti1-xZrxN thin films

    International Nuclear Information System (INIS)

    Hoerling, A.; Sjoelen, J.; Willmann, H.; Larsson, T.; Oden, M.; Hultman, L.

    2008-01-01

    Single-phase [NaCl]-structure Ti 1-x Zr x N thin films (0 1-x Zr x N films is proposed to be solid-solution hardening through local lattice strain fields originating from difference in atomic radius of Ti and Zr. The material system is thus promising for cutting tool applications

  5. Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems

    Directory of Open Access Journals (Sweden)

    Kenji Okabe

    2015-12-01

    Full Text Available In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI chip on the very thin parylene film (5 μm enables the integration of the rectifier circuits and the flexible antenna (rectenna. In the demonstration of wireless power transmission (WPT, the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

  6. Amorphous silicon-carbon based nano-scale thin film anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Datta, Moni Kanchan; Maranchi, Jeffrey; Chung, Sung Jae; Epur, Rigved; Kadakia, Karan; Jampani, Prashanth; Kumta, Prashant N.

    2011-01-01

    Research highlights: → Thin film amorphous C/Si. Good cycling response validates carbon matrix for Silicon anodes. → Thin film amorphous C/Si/C. Good cycling response validates carbon as an interface and matrix. - Abstract: The buffering effect of carbon on the structural stability of amorphous silicon films, used as an anode for lithium ion rechargeable batteries, has been studied during long term discharge/charge cycles. To this extent, the electrochemical performance of a prototype material consisting of amorphous Si thin film (∼250 nm) deposited by radio frequency magnetron sputtering on amorphous carbon (∼50 nm) thin films, denoted as a-C/Si, has been investigated. In comparison to pure amorphous Si thin film (a-Si) which shows a rapid fade in capacity after 30 cycles, the a-C/Si exhibits excellent capacity retention displaying ∼0.03% fade in capacity up to 50 cycles and ∼0.2% after 50 cycles when cycled at a rate of 100 μA/cm 2 (∼C/2) suggesting that the presence of thin amorphous C layer deposited between the Cu substrate and a-Si acts as a buffer layer facilitating the release of the volume induced stresses exhibited by pure a-Si during the charge/discharge cycles. This structural integrity combined with microstructural stability of the a-C/Si thin film during the alloying/dealloying process with lithium has been confirmed by scanning electron microscopy (SEM) analysis. The buffering capacity of the thin amorphous carbon layer lends credence to its use as the likely compliant matrix to curtail the volume expansion related cracking of silicon validating its choice as the matrix for bulk and thin film battery systems.

  7. "Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

    Science.gov (United States)

    Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

    2013-04-01

    During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

  8. Magnetic and magneto-optical properties of FeRh thin films

    International Nuclear Information System (INIS)

    Inoue, Sho; Nam, Nguyen T.; Phuoc, Nguyen N.; Cao Jiangwei; Yu Ko, Hnin Yu; Suzuki, Takao

    2008-01-01

    The magnetic and magneto-optical properties of FeRh thin films epitaxially deposited onto MgO(1 0 0) substrates by RF sputter-deposition system have been investigated in conjunction with the structure. An intriguing virgin effect has been found in the M-T curves of the as-deposited FeRh thin films, which is presumably interpreted in term of a change in structural phase when heating. Also, a (negative) maximum peak of Kerr rotation at around 3.8 eV has been observed when FeRh thin films are in ferromagnetic state. The polar Kerr rotation angle is found to increase at temperatures above 100 deg. C, which corresponds to the antiferromagnet (AF)-ferromagnet (FM) transition of FeRh thin films

  9. Degradation process in organic thin film devices fabricated using ...

    Indian Academy of Sciences (India)

    hexylthiophene); organic semiconductors; conducting polymers; degradation. ... The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have ...

  10. Modeling surface imperfections in thin films and nanostructured surfaces

    DEFF Research Database (Denmark)

    Hansen, Poul-Erik; Madsen, J. S.; Jensen, S. A.

    2017-01-01

    Accurate scatterometry and ellipsometry characterization of non-perfect thin films and nanostructured surfaces are challenging. Imperfections like surface roughness make the associated modelling and inverse problem solution difficult due to the lack of knowledge about the imperfection...

  11. Property elucidation of vacuum-evaporated zinc telluride thin film ...

    Indian Academy of Sciences (India)

    J U Ahamed

    2017-08-31

    ZnTe) thin film on glass substrate in order to investigate the ... photovoltaic solar cells, light-emitting diodes, laser diodes, microwave devices .... integrated intensity ratio of a super lattice peak to a fun- damental peak. Comparing ...

  12. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  13. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  14. Laser Induced Chemical Vapor Deposition of Thin Films

    National Research Council Canada - National Science Library

    Zahavi, Joseph

    1995-01-01

    .... It completes the information which was given in the previous two progress reports. Basically, the aim of the first year was to study the possibility of deposition of silicon nitride thin films from silane and ammonia at low temperatures...

  15. Thin carbon film serves as UV bandpass filter

    Science.gov (United States)

    1966-01-01

    Thin carbon film deposited on a 70 percent transparent screen provides a filter for narrow-band detectors in the extreme ultraviolet. The filter also suppresses scattered light and light of unwanted orders in vacuum spectrographs.

  16. Simple gun for vapor deposition of organic thin films

    International Nuclear Information System (INIS)

    Sato, N.; Seki, K.; Inokuchi, H.

    1987-01-01

    A simple evaporation gun for preparing organic thin films was fabricated using commercially available parts of an electron gun for a TV Braun tube. The device permits sample heating to be easily controlled because of the small heat capacity

  17. The effect of film thickness and molecular structure on order and disorder in thin films of compositionally asymmetric block copolymers

    Science.gov (United States)

    Mishra, Vindhya

    Directed self-assembly of thin film block copolymers offer a high throughput-low cost route to produce next generation lithographic devices, if one can bring the defect densities in the self assembled patterns below tolerance limits. However, the ability to control the nanoscale structure or morphology in thin film block copolymers presents challenges due to confinement effects on equilibrium behavior. Using structure characterization techniques such as grazing incidence small angle X-ray scattering (GISAXS), transmission electron and atomic force microscopy as well as self-consistent field theory, we have investigated how film thickness, annealing temperature and block copolymer structure affects the equilibrium behavior of asymmetric block copolymer films. Our studies have revealed the complicated dependence of order-disorder transitions, order-order transitions and symmetry transitions on film thickness. We found that the thickness dependent transition in the packing symmetry of spherical morphology diblock copolymers can be suppressed by blending with a small amount of majority block homopolymer, which allowed us to resolve the driving force behind this transition. Defect densities in, and the order-disorder transition temperature of, thin films of graphoepitaxially aligned diblock copolymer cylinders showed surprising sensitivity to the microdomain spacing. Methods to mitigate defect formation in thin films have been identified. The challenge of quantification of structural order in these systems was overcome using GISAXS, which allowed us to study the phenomena of disordering in two and three dimensions. Through studies on block copolymers which exhibit an order-order transition in bulk, we found that that subtle differences in the packing frustration of the spherical and cylindrical phases as well as the higher configurational entropy of free chain ends at the surface can drive the equilibrium configuration in thin films away from the stable bulk structure

  18. Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

    International Nuclear Information System (INIS)

    Iljinas, A.; Burinskas, S.; Dudonis, J.

    2011-01-01

    In this work Bi 2 O 3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi 2 O 3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates. (author)

  19. Thin films of xyloglucans for BSA adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Jo, T.A. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Petri, D.F.S. [Institute of Chemistry, University of Sao Paulo, Sao Paulo, SP (Brazil); Valenga, F. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Lucyszyn, N. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Sierakowski, M.-R. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil)], E-mail: mariarita.sierakowski@ufpr.br

    2009-03-01

    In this work, XG extracted from Tamarindus indica (XGT) and Copaifera langsdorffii (XGC) seeds were deposited onto Si wafers as thin films. The characteristics of XGT and XGC adsorbed layers were compared with a commercial XG sample (TKP, Tamarind kernel powder) by ellipsometry and atomic force microscopy (AFM). Moreover, the adsorption of oxidized derivative of XGT (To60) onto amino-terminated Si wafers and the immobilization of bovine serum albumin (BSA) onto polysaccharides covered wafers, as a function of pH, were also investigated. The XG samples presented molar ratios Glc:Xyl:Gal of 2.4:2.1:1 (XGC); 2.8: 2.3: 1 (XGT) and 1.9:1.9:1 (TKP). The structure of XGT and XGC was determined by O-methy alditol acetate derivatization and showed similar features, but XGC confirmed the presence of more {alpha}-D-Xyl branches due to more {beta}-D-Gal ends. XGT deposited onto Si adsorbed as fibers and small entities uniformly distributed, as evidenced by AFM, while TPK and XGC formed larger aggregates. The thickness of To60 onto amino-terminated surface was similar to that determined for XGT onto Si wafers. A maximum in the adsorbed amount of BSA occurred close to its isoelectric point (5.5). These findings indicate that XGT and To60 are potential materials for the development of biomaterials and biotechnological devices.

  20. Degradation analysis of thin film photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C., E-mail: chantelle.radue@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P{sub MAX}) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 approx30% and a total degradation of approx42%. For Si-2 the initial P{sub MAX} was 7.93 W, with initial light-induced degradation of approx10% and a total degradation of approx17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  1. Degradation analysis of thin film photovoltaic modules

    International Nuclear Information System (INIS)

    Radue, C.; Dyk, E.E. van

    2009-01-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P MAX ) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 ∼30% and a total degradation of ∼42%. For Si-2 the initial P MAX was 7.93 W, with initial light-induced degradation of ∼10% and a total degradation of ∼17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  2. Thin wetting film lens-less imaging

    International Nuclear Information System (INIS)

    Allier, C.P.; Poher, V.; Coutard, J.G.; Hiernard, G.; Dinten, J.M.

    2011-01-01

    Lens-less imaging has recently attracted a lot of attention as a compact, easy-to-use method to image or detect biological objects like cells, but failed at detecting micron size objects like bacteria that often do not scatter enough light. In order to detect single bacterium, we have developed a method based on a thin wetting film that produces a micro-lens effect. Compared with previously reported results, a large improvement in signal to noise ratio is obtained due to the presence of a micro-lens on top of each bacterium. In these conditions, standard CMOS sensors are able to detect single bacterium, e.g. E. coli, Bacillus subtilis and Bacillus thuringiensis, with a large signal to noise ratio. This paper presents our sensor optimization to enhance the SNR; improve the detection of sub-micron objects; and increase the imaging FOV, from 4.3 mm 2 to 12 mm 2 to 24 mm 2 , which allows the detection of bacteria contained in 0.5 μl to 4 μl to 10 μl, respectively. (authors)

  3. Trends and new applications in thin films

    International Nuclear Information System (INIS)

    1996-01-01

    The proceedings of this symposium comprise 95 communications from which 64 were selected and fall into the scope of INIS subject categories, and 1 was selected for ETDE indexing. The selected communications deal with the techniques used for thin films preparation using chemical or physical vapor deposition techniques (plasma-arc or jet spraying, cathode sputtering, reactive DC or RF magnetron sputtering, plasma-ion deposition, ion implantation, electron or ion beam spraying, ion beam assisted plasma etching, dynamic ion mixing, distributed electron cyclotron resonance plasma sputtering, laser induced plasma sputtering etc..). The effects and interactions with the substrates (ion implantation, crystal growth, crystal-phase transformations, microstructures, penetration depth, changes in lattice parameters etc..) are analysed using various techniques such as grazing incidence X-ray diffraction, X-ray reflectometry, X-ray and angle resolved electron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectroscopy, SEM, TEM, IR absorption spectroscopy, UV or visible emission spectroscopy, conversion electron Moessbauer spectroscopy, X-ray fluorescence, mass spectroscopy, optical ellipsometry etc.. Mechanical tests such as scratch, microhardness and wear tests are also performed on the coatings to analyse their mechanical properties. (J.S.)

  4. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  5. Inverse bilayer magnetoelectric thin film sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yarar, E.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Chair for Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Salzer, S.; Höft, M.; Knöchel, R. [Microwave Laboratory, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Chair for Synthesis and Real Structure, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)

    2016-07-11

    Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

  6. Thin film deposition using rarefied gas jet

    Science.gov (United States)

    Pradhan, Sahadev, , Dr.

    2017-06-01

    The rarefied gas jet of aluminium is studied at Mach number Ma = (Uj /√{ kbTj / mg }) in the range .01 PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kbis the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn=0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number, which allows scattering collisions to rapidly direct the atoms to the substrate.

  7. Magnetostatic excitations in thin ferrite films

    International Nuclear Information System (INIS)

    Zil'berman, P.E.; Lugovskoi, A.V.

    1987-01-01

    The authors discuss the influence of the exchange interaction and dissipative processes in thin ferrite films on the eigenfrequency spectrum of magnetostatic standing waves and on the dispersion relation and attenuation of magnetostatic traveling waves. For the first time they obtain explicitly the dispersion relation for magnetostatic waves (MSWs) in a tangential saturating magnetic field H 0 to second order (inclusive) in the exchange interaction parameter λ. The authors obtain computer solutions for this equation in the complex frequency (ω) plane (for standing waves) or wave-number (q) plane (for traveling waves). The authors show that the dispersion relation constructed from the standing-wave spectrum is different from that of the traveling waves if λ≠0, even if dissipation is neglected. The traveling waves have auxiliary branches of the dispersion relation with weak damping near the spin-wave-resonance (SWR) frequencies. Dissipation has only a relatively weak effect on the frequency spectrum of the standing waves, shifting it upward. For the traveling waves, however, dissipation leads to qualitative changes in the structure of the dispersion relation, giving rise to new branches, forbidden bands, reentrant and anomalous-dispersion regions

  8. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  9. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  10. Stress effects in ferroelectric perovskite thin-films

    Science.gov (United States)

    Zednik, Ricardo Johann

    The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

  11. Structural And Optical Properties Of VOx Thin Films

    Directory of Open Access Journals (Sweden)

    Schneider K.

    2015-06-01

    Full Text Available VOx thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated.

  12. Health, safety and environmental issues in thin film manufacturing

    OpenAIRE

    Alsema, E.A.; Baumann, A.E.; Hill, R.; Patterson, M.H.

    1997-01-01

    An investigation is made of Health, Safety and Environmental (HSE) aspects for the manufacturing, use and decommissioning of CdTe, CIS and a-Si modules. Issues regarding energy requirements, resource availability, emissions of toxic materials, occupational health and safety and module waste treatment are reviewed. Waste streams in thin film module manufacturing are analyzed in detail and treatment methods are discussed. Finally the technological options for thin film module recycling are inve...

  13. Growth of cuprate high temperature superconductor thin films

    Directory of Open Access Journals (Sweden)

    H-U Habermeier

    2006-09-01

    Full Text Available   This paper reviews briefly the development of physical vapour deposition based HTS thin film preparation technologies to today’s state-of-the-art methods. It covers the main trends of in-situ process and growth control. The current activities to fabricate tapes for power applications as well as to tailor interfaces in cuprate are described. Some future trends in HTS thin film research, both for science as well as application driven activities are outlined.

  14. Thin film bulk acoustic wave devices : performance optimization and modeling

    OpenAIRE

    Pensala, Tuomas

    2011-01-01

    Thin film bulk acoustic wave (BAW) resonators and filters operating in the GHz range are used in mobile phones for the most demanding filtering applications and complement the surface acoustic wave (SAW) based filters. Their main advantages are small size and high performance at frequencies above 2 GHz. This work concentrates on the characterization, performance optimization, and modeling techniques of thin film BAW devices. Laser interferometric vibration measurements together with plat...

  15. The 1989 progress report: interface physics and thin films

    International Nuclear Information System (INIS)

    Equer, B.

    1989-01-01

    The 1989 progress report of the laboratory of Interface Physics and Thin Films of the Polytechnic School (France) is presented. The properties and the interfaces of thin films, which show optoelectronic activity, are studied. The materials investigated are hydrogenated amorphous silicon compounds, amorphous compounds of silicon-germanium, silicon-carbon and silicon-mitrogen. The techniques developed for manufacturing and characterizing those materials are included. The published papers, the conferences and the Laboratory staff are listed [fr

  16. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  17. Thermomagnetic marking of rare-earth-transition-metal thin films

    Science.gov (United States)

    Bartholomeusz, Brian Josef

    1989-01-01

    Analytical derivation of temperature profiles in laser-irradiated thin-film structures is hindered by the nature of the heat source terms and by the geometrical complexity that often exists. This study utilizes a combined Laplace-transform-Fourier-integral method to obtain approximate solutions for a number of simple cases. The results are used to study the thermomagnetic marking process in rare-earth-transition-metal (RE-TM) thin films, and the predictions are compared with experimental observations.

  18. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Abstract. For the first time, sputtered zinc oxide (ZnO) thin films have been used as a CO2 gas sensor. Zinc oxide thin films have been synthesized using reactive d.c. sputtering method for gas sensor applications, in the deposition temperature range from 130–153°C at a chamber pressure of 8⋅5 mbar for 18 h. Argon and ...

  19. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  20. Silver nanowire-based transparent, flexible, and conductive thin film

    Directory of Open Access Journals (Sweden)

    Liu Cai-Hong

    2011-01-01

    Full Text Available Abstract The fabrication of transparent, conductive, and uniform silver nanowire films using the scalable rod-coating technique is described in this study. Properties of the transparent conductive thin films are investigated, as well as the approaches to improve the performance of transparent silver nanowire electrodes. It is found that silver nanowires are oxidized during the coating process. Incubation in hydrogen chloride (HCl vapor can eliminate oxidized surface, and consequently, reduce largely the resistivity of silver nanowire thin films. After HCl treatment, 175 Ω/sq and approximately 75% transmittance are achieved. The sheet resistivity drops remarkably with the rise of the film thickness or with the decrease of transparency. The thin film electrodes also demonstrated excellent flexible stability, showing < 2% resistance change after over 100 bending cycles.