WorldWideScience

Sample records for thin film module

  1. Degradation analysis of thin film photovoltaic modules

    Radue, C.; Dyk, E.E. van

    2009-01-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P MAX ) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 ∼30% and a total degradation of ∼42%. For Si-2 the initial P MAX was 7.93 W, with initial light-induced degradation of ∼10% and a total degradation of ∼17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  2. Degradation analysis of thin film photovoltaic modules

    Radue, C., E-mail: chantelle.radue@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P{sub MAX}) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 approx30% and a total degradation of approx42%. For Si-2 the initial P{sub MAX} was 7.93 W, with initial light-induced degradation of approx10% and a total degradation of approx17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  3. Application of composition modulated thin films

    Hilliard, J.E.

    1979-01-01

    Film produced by evaporating two components through a rotating pinwheel shutter which cuts off the vapor first from one source and then the other are evaluated. These films have a modulated composition rather than a layered structure. Mechanical properties were determined using a bulge tester

  4. Development of thin-film Si HYBRID solar module

    Nakajima, Akihiko; Gotoh, Masahiro; Sawada, Toru; Fukuda, Susumu; Yoshimi, Masashi; Yamamoto, Kenji; Nomura, Takuji [Kaneka Corporation, 2-1-1, Hieitsuji, Otsu, Shiga 520-0104 (Japan)

    2009-06-15

    The device current-voltage (I-V) characteristics of thin-film silicon stacked tandem solar modules (HYBRID modules), consisting of a hydrogenated amorphous silicon (a-Si:H) cell and a thin-film crystalline silicon solar cell ({mu}c-Si), have been investigated under various spectral irradiance distributions. The performance of the HYBRID module varied periodically in natural sunlight due to the current-limiting property of the HYBRID module and the environmental effects. The behavior based on the current-limiting property was demonstrated by the modelling of the I-V curves using the linear interpolation method for each component cell. The improvement of the performance for the HYBRID module in natural sunlight will also be discussed from the viewpoint of the device design of the component cells. (author)

  5. Mass productions of thin film silicon PV modules

    Tawada, Y.; Yamagishi, H.; Yamamoto, K.

    2003-01-01

    Mass production technologies of a-Si single junction and a-Si/poly-Si hybrid modules with stable 8% and 10% efficiency were developed in the Shiga factory of Kaneka Corporation. Kaneka instituted Kaneka Solartech Corporation (KST) as a subsidiary company of 100% shareholder and invested 20 MW production plant in Toyooka City in 1999. There are fully automatic thin film fabrication equipments. KST started the manufacturing amorphous silicon PV modules in 1999 and those of hybrid type PV modules in 2001. The largest size glass substrates used for these modules are 95x98 cm and variable size of modules are being produced by cutting these large area base modules. Recent production yields are higher than 98%. Production technologies of a-Si, thin c-Si and solar cells, performances of modules, applications to the rooftop PV systems will be presented. We estimate the production cost of a-Si solar modules and a-Si/thin c-Si hybrid solar modules. The future business plan of our new type solar modules and our production lines will be discussed. (author)

  6. Thin film silicon modules on plastic superstrates

    Rath, J.K.; Liu, Y; Borreman, A.; Hamers, E.A.G.; Schlatmann, R.; Jongerden, G.J.; Schropp, R.E.I.

    2008-01-01

    The aim of this research is to fabricate high efficiency a-Si/μc-Si tandem solar cell modules on flexible (polymer) superstrates using the Helianthos concept. As a first step we began by depositing the top cell which contains an amorphous silicon (a-Si:H) i-layer of 350 nm made by VHF PECVD at 50

  7. Scale-up issues of CIGS thin film PV modules

    Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, FL 32922 (United States)

    2011-01-15

    Photovoltaics cost has been declining following a 70% learning curve. Now the challenge is to bring down the cost of solar electricity to make it competitive with conventional sources within the next decade. In the long run, the module efficiencies tend to reach 80% of the champion cell efficiencies. Using a semiempirical methodology, it has been shown earlier that while the triple junction a-Si:H thin film technology is competitive, CIGS and CdTe thin film module technologies are highly competitive and presently offer the best approach for significantly exceeding the cost/performance levels of standard and non-standard crystalline Si PV technologies. Since 2006, the production of thin film solar cell in the U.S. has surpassed that of c-Si. At present, the production of CIGS PV modules lags considerably behind that of CdTe PV modules. This is mainly because of its complexity. Scale-up issues related to various CIGS preparation technologies such as co-evaporation, metallic precursor deposition by magnetron sputtering and non-vacuum techniques such as ink-jet printing, electroplating or doctor-blade technology followed by their selenization/sulfurization are discussed so as to assist the CIGS technology to attain its full potential. Besides the welcome announcements of large volume production, it is essential to achieve the production cost below $1/Wp in the near term and attain production speeds comparable to CdTe production speeds. Comparable production speeds are expected to be achieved within the next decade. This will enable reduction of CIGS module production costs to {proportional_to}65 cents /Wp that would be comparable to the CdTe module projected production cost. Additionally CIGS will have a higher efficiency premium. (author)

  8. Transparent electrode requirements for thin film solar cell modules

    Rowell, Michael W.; McGehee, Michael D.

    2011-01-01

    The transparent conductor (TC) layer in thin film solar cell modules has a significant impact on the power conversion efficiency. Reflection, absorption, resistive losses and lost active area either from the scribed interconnect region in monolithically integrated modules or from the shadow losses of a metal grid in standard modules typically reduce the efficiency by 10-25%. Here, we perform calculations to show that a competitive TC must have a transparency of at least 90% at a sheet resistance of less than 10 Ω/sq (conductivity/absorptivity ≥ 1 Ω -1) for monolithically integrated modules. For standard modules, losses are much lower and the performance of alternative lower cost TC materials may already be sufficient to replace conducting oxides in this geometry. © 2011 The Royal Society of Chemistry.

  9. Circuit analysis method for thin-film solar cell modules

    Burger, D. R.

    1985-01-01

    The design of a thin-film solar cell module is dependent on the probability of occurrence of pinhole shunt defects. Using known or assumed defect density data, dichotomous population statistics can be used to calculate the number of defects expected in a module. Probability theory is then used to assign the defective cells to individual strings in a selected series-parallel circuit design. Iterative numerical calculation is used to calcuate I-V curves using cell test values or assumed defective cell values as inputs. Good and shunted cell I-V curves are added to determine the module output power and I-V curve. Different levels of shunt resistance can be selected to model different defect levels.

  10. Characterisation of thin films by phase modulated spectroscopic ellipsometry

    Bhattacharyya, D.; Das, N.C.

    1998-07-01

    A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (χ 2 ) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done on (i) ion-implanted Si-wafers to investigate the formation of SiC layers, (ii) phenyl- silane coating on glass to investigate the surface modifications achieved for better adsorption of rhodamine dye on glass, (iii) GaN films on quartz to investigate the formation of high quality GaN layers by sputtering of GaAs targets, (iv) Diamond-like-coating (DLC) samples prepared by Chemical Vapour Deposition (CVD) to investigate the optical properties which would ultimately lead to an accurate estimation of the ratio of sp 3 and sp 2 bonded carbon atoms in the films and (v) SS 304 under different surface treatments to investigate the growth of different passive films. (author)

  11. Thin-film filament-based solar cells and modules

    Tuttle, J. R.; Cole, E. D.; Berens, T. A.; Alleman, J.; Keane, J.

    1997-04-01

    This concept paper describes a patented, novel photovoltaic (PV) technology that is capable of achieving near-term commercialization and profitability based upon design features that maximize product performance while minimizing initial and future manufacturing costs. DayStar Technologies plans to exploit these features and introduce a product to the market based upon these differential positions. The technology combines the demonstrated performance and reliability of existing thin-film PV product with a cell and module geometry that cuts material usage by a factor of 5, and enhances performance and manufacturability relative to standard flat-plate designs. The target product introduction price is 1.50/Watt-peak (Wp). This is approximately one-half the cost of the presently available PV product. Additional features include: increased efficiency through low-level concentration, no scribe or grid loss, simple series interconnect, high voltage, light weight, high-throughput manufacturing, large area immediate demonstration, flexibility, modularity.

  12. Magnetic studies of Fe-Y compositionally modulated thin films

    Badia, F.; Ferrater, C.; Lousa, A.; Martinez, B.; Labarta, A.; Tejada, J.

    1990-01-01

    Compositionally modulated thin films of Y/Fe have been studied by using SQUID magnetometry. Samples were grown by electron-beam evaporation onto Kapton substrates. In the low applied field regime, the samples show irreversible behavior when they are submitted to ZFC-FC magnetization processes, increasing the irreversibility zone as the thickness of the Fe layers increases. In the high applied magnetic field regime (H≥10 000 Oe), samples show ferromagnetic behavior. The temperature dependence of the saturation magnetization has been studied, and it was found that both spin-wave excitations and Stoner excitations occur at temperatures higher than 40 K, and a marked deviation from the T 3/2 law was noted below 30 K

  13. Effects of excitation intensity on the photocurrent response of thin film silicon solar modules

    Kim, Q.; Shumka, A.; Trask, J.

    1986-01-01

    Photocurrent responses of amorphous thin film silicon solar modules at room temperature were studied at different excitation intensities using various monochromatic light sources. Photocurrent imaging techniques have been effectively used to locate rapidly, and non-destructively, failure and defect sites in the multilayer thin film device. Differences observed in the photocurrent response characteristics for two different cells in the same amorphous thin film silicon solar module suggest the possibility of the formation of dissimilarly active devices, even though the module is processed in the same fabrication process. Possible mechanisms are discussed.

  14. Modulated surface textures for enhanced scattering in thin-film silicon solar cells

    Isabella, O.; Battaglia, C.; Ballif, C.; Zeman, M.

    2012-01-01

    Nano-scale randomly textured front transparent oxides are superposed on micro-scale etched glass substrates to form modulated surface textures. The resulting enhanced light scattering is implemented in single and double junction thin-film silicon solar cells.

  15. Spectroelectrochemical properties of ultra-thin indium tin oxide films under electric potential modulation

    Han, Xue, E-mail: x0han004@louisville.edu; Mendes, Sergio B., E-mail: sbmend01@louisville.edu

    2016-03-31

    In this work, the spectroscopic properties of ultra-thin ITO films are characterized under an applied electric potential modulation. To detect minute spectroscopic features, the ultra-thin ITO film was coated over an extremely sensitive single-mode integrated optical waveguide, which provided a long pathlength with more than adequate sensitivity for optical interrogation of the ultra-thin film. Experimental configurations with broadband light and several laser lines at different modulation schemes of an applied electric potential were utilized to elucidate the nature of intrinsic changes. The imaginary component of the refractive index (absorption coefficient) of the ultra-thin ITO film is unequivocally shown to have a dependence on the applied potential and the profile of this dependence changes substantially even for wavelengths inside a small spectral window (500–600 nm). The characterization technique and the data reported here can be crucial to several applications of the ITO material as a transparent conductive electrode, as for example in spectroelectrochemical investigations of surface-confined redox species. - Highlights: • Optical waveguides are applied for spectroscopic investigations of ultra-thin films. • Ultra-thin ITO films in aqueous environment are studied under potential modulation. • Unique spectroscopic features of ultra-thin ITO films are unambiguously observed.

  16. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

    2013-01-01

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  17. Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

    Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

    2017-10-01

    Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

  18. Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

    van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2007-01-23

    The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

  19. Modulation of magnetic coercivity in Ni thin films by reversible control of strain

    Lin, Wen-Chin, E-mail: wclin@ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Huang, Chia-Wei; Ting, Yi-Chieh; Lo, Fang-Yuh [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Chern, Ming-Yau [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

    2015-05-01

    In this study, we demonstrated the magnetoelectric control of magnetic thin films. (111)-textured Pd/Ni/Pd thin films were prepared on mica/lead zirconium titanate (PZT) substrates for the investigation. The reversible modulation of magnetic coercivity in Ni films was observed through the electric-voltage-controlled strain variation from the PZT substrate. For 14 nm Ni film, the applied electric field of ±350 V/m led to ±0.5% strain variation of PZT, which was transferred to ±0.4% strain variation of Pd/Ni/Pd thin films on mica, and resulted in ∓17 Oe (∓5% of the preliminary magnetic coercivity). The reversible modulation of magnetic coercivity is supposed to be caused by the voltage-controlled strain through the magneto-elastic effect. - Highlights: • The magnetoelectric control of the magnetic coercivity of Pd/Ni/Pd thin films was demonstrated. • The ±0.4% strain variation of 14 nm Ni thin films resulted in ±17 Oe change of H{sub c}. • The reversible modulation of H{sub c} is supposed to be caused by the magneto-elastic effect.

  20. thin films

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  1. Thin film silicon modules: contributions to low cost industrial production

    Shah, A. [Universite de Neuchatel, Neuchatel (Switzerland)

    2005-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) discusses the research work done during the two-year period 2003-04 at the Thin-Film Solar Cell Laboratory of the Institute of Microtechnology (IMT) at the University of Neuchatel in Switzerland. The transition from fundamental research work to concrete industrialisation issues, and changes within the research staff are discussed. The main results of the work done are presented, including basic techniques for the production of p-i-n solar cells on glass, new technologies for the deposition of n-i-p cells on low-cost flexible substrates and the optimisation of zinc oxide deposition methods. The key role played by substrate chemistry and roughness in the nucleation and growth of micro-crystalline silicon layers is looked at and diagnostic tools for the analysis of micro-crystalline solar cells are discussed.

  2. Presence and future of thin-film photovoltaics modules; Gegenwart und Zukunft von Duennschichtphotovoltaikmodulen

    Voswinckel, Sebastian [Fachhochschule Nordhausen (Germany). Inst. fuer Regenerative Energietechnik (in.RET)

    2012-07-01

    The thin-film photovoltaics is a technology with a high level of future potential of the solar energy industry. An enhanced potential of expense reduction and technical development provided a massive development of production capacities. The thin-film photovoltaics has advantageous technical properties such as a pronounced low-light behaviour and an enhanced efficiency at higher temperatures. In contrast, there are technical challenges. Beside the lower efficiency, an irreversible degradation of the transparent front contact may result especially in the case of amorphous silicon modules under certain circumstances. Effective measures for the protection of the so-called TCO corrosion have to be developed and implemented on module level and system level. Similarly, time-saving and cost-saving test methods for the evaluation of the damage potential have to be developed. The growing pricing pressure of crystalline solar cells put the thin-film industry under pressure. With respect to the technical and economic expectations aroused in the past as well as with respect to partly unsolved problems of the thin-film technology, the author of the contribution under consideration tries to present an outlook on the future chances and threats of this technology. Advantages and disadvantages of thin-film photovoltaics modules as well as possible approaches of a solution of technical difficulties are presented.

  3. Thin-film VO2 submillimeter-wave modulators and polarizers

    Fan, J.C.C.; Fetterman, H.R.; Bachner, F.J.; Zavracky, P.M.; Parker, C.D.

    1977-01-01

    Submillimeter-wave modulators and switchable polarizers have been fabricated from VO 2 thin films deposited on sapphire substrates. By passing electric current pulses through elements made from these films, the films can be thermally cycled through the insulator-to-metal transition that occurs in VO 2 at about 65 degreeC. In the insulating state, the films are found to have negligible effect on the transmission at submillimeter wavelengths, while above the phase transition the transmission is strongly reduced by the free-electron effects characteristic of a metal. Other possible applications of such switchable VO 2 elements include variable bandpass filters and diffraction grating beam-steering devices

  4. Correction for Metastability in the Quantification of PID in Thin-film Module Testing

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve

    2017-01-01

    A fundamental change in the analysis for the accelerated stress testing of thin-film modules is proposed, whereby power changes due to metastability and other effects that may occur due to the thermal history are removed from the power measurement that we obtain as a function of the applied stres...

  5. Correction for Metastability in the Quantification of PID in Thin-film Module Testing

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve

    2017-01-01

    A fundamental change in the analysis for the accelerated stress testing of thin-film modules is proposed, whereby power changes due to metastability and other effects that may occur due to the thermal history are removed from the power measurement that we obtain as a function of the applied stress...... in standardized tests, the method is demonstrated and discussed for potential-induced degradation testing in view of the physical mechanisms that can lead to confounding power changes in the module....

  6. Practical issues for testing thin film PV modules at standard test conditions.

    Marín González, Omar; Raga Arroyo, Manuela Pilar; Alonso Garcia, M. Carmen; Muñoz-García, Miguel Angel

    2013-01-01

    Thin film photovoltaic (TF) modules have gained importance in the photovoltaic (PV) market. New PV plants increasingly use TF technologies. In order to have a reliable sample of a PV module population, a huge number of modules must be measured. There is a big variety of materials used in TF technology. Some of these modules are made of amorphous or microcrystalline silicon. Other are made of CIS or CdTe. Not all these materials respond the same under standard test conditions (STC) of power...

  7. Cost reduction by using micro-fingers in thin film silicon modules

    Slooff, L.H.; Bosman, J.; Loffler, J.; Budel, T. [ECN Solar Energy, Petten (Netherlands)

    2013-06-15

    A finite element electrical model is described that can be used to calculate the performance of monolithic thin film photovoltaic modules. The model is suitable for all type of thin film modules, like e.g. p-i-n a-Si:H, CIGS and polymer based modules and it includes losses due to interconnection. Using this model a parameter study is performed for a-Si:H cells with the aim to reduce metal consumption in the cell and interconnection. It is shown that a reduction in metal consumption by a factor 1.3 can be achieved with only marginal loss in performance if short cell are used with very short fingers.

  8. Estimating the Effects of Module Area on Thin-Film Photovoltaic System Costs: Preprint

    Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fu, Ran [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Silverman, Timothy J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Woodhouse, Michael A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sun, Xingshu [Purdue University; Alam, Muhammad A [Purdue University

    2018-03-29

    We investigate the potential effects of module area on the cost and performance of photovoltaic systems. Applying a bottom-up methodology, we analyzed the costs associated with thin-film modules and systems as a function of module area. We calculate a potential for savings of up to 0.10 dollars/W and 0.13 dollars/W in module manufacturing costs for CdTe and CIGS respectively, with large area modules. We also find that an additional 0.04 dollars/W savings in balance-of-systems costs may be achieved. Sensitivity of the dollar/W cost savings to module efficiency, manufacturing yield, and other parameters is presented. Lifetime energy yield must also be maintained to realize reductions in the levelized cost of energy; the effects of module size on energy yield for monolithic thin-film modules are not yet well understood. Finally, we discuss possible non-cost barriers to adoption of large area modules.

  9. Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling

    Simon, F.-G., E-mail: franz-georg.simon@bam.de [BAM Federal Institute for Materials Research and Testing, Division 4.3 Contaminant Transfer and Environmental Technologies, Unter den Eichen 87, 12205 Berlin (Germany); Holm, O.; Berger, W. [BAM Federal Institute for Materials Research and Testing, Division 4.3 Contaminant Transfer and Environmental Technologies, Unter den Eichen 87, 12205 Berlin (Germany)

    2013-04-15

    Highlights: ► The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ► The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ► PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources.

  10. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  11. Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling

    Simon, F.-G.; Holm, O.; Berger, W.

    2013-01-01

    Highlights: ► The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ► The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ► PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources

  12. Correction for Metastability in the Quantification of PID in Thin-film Module Testing: Preprint

    Hacke, Peter L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Johnston, Steven [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Spataru, Sergiu [Aalborg University

    2017-10-01

    A fundamental change in the analysis for the accelerated stress testing of thin-film modules is proposed, whereby power changes due to metastability and other effects that may occur due to the thermal history are removed from the power measurement that we obtain as a function of the applied stress factor. The power of reference modules normalized to an initial state - undergoing the same thermal and light- exposure history but without the applied stress factor such as humidity or voltage bias - is subtracted from that of the stressed modules. For better understanding and appropriate application in standardized tests, the method is demonstrated and discussed for potential-induced degradation testing in view of the parallel-occurring but unrelated physical mechanisms that can lead to confounding power changes in the module.

  13. Thin film solar modules: the low cost, high throughput and versatile alternative to Si wafers

    Hegedus, S. [Delaware Univ., Inst. of Energy Conversion, Newark, DE (United States)

    2006-07-01

    Thin film solar cells (TFSC) have passed adolescence and are ready to make a substantial contribution to the world's electricity generation. They can have advantages over c-Si solar modules in ease of large area, lower cost manufacturing and in several types of applications. Factors which limit TFSC module performance relative to champion cell performance are discussed along with the importance of increased throughput and yield. The consensus of several studies is that all TFSC can achieve costs below 1 $/W if manufactured at sufficiently large scale >100 MW using parallel lines of cloned equipment with high material utilization and spray-on encapsulants. There is significant new commercial interest in TFSC from small investors and large corporations, validating the thin film approach. Unique characteristics are discussed which give TFSC an advantage over c-Si in two specific markets: small rural solar home systems and building integrated photovoltaic installations. TFSC have outperformed c-Si in annual energy production (kWhrs/kW), have demonstrated outdoor durability comparable to c-Si and are being used in MW scale installations worldwide. The merits of the thin film approach cannot be judged on the basis of efficiency alone but must also account for module performance and potential for low cost. TFSC advocates should promote their unique virtues compared to c-Si: lower cost, higher kWhr/kW output, higher battery charging current, attractive visual appearance, flexible substrates, long-term stability comparable to c-Si, and multiple pathways for deposition with room for innovation and evolutionary improvement. There is a huge market for TFSC even at today's efficiency if costs can be reduced. A brief window of opportunity exists for TFSC over the next few years due the Si shortage. The demonstrated capabilities and advantages of TFSC must be proclaimed more persistently to funding decision-makers and customers without minimizing the remaining

  14. Research progress on large-area perovskite thin films and solar modules

    Zhichun Yang

    2017-12-01

    Full Text Available Organometal halide perovskites have exhibited a bright future as photovoltaic semiconductor in next generation solar cells due to their unique and promising physicochemical properties. Over the past few years, we have witnessed a tremendous progress of efficiency record evolution of perovskite solar cells (PSCs. Up to now, the highest efficiency record of PSCs has reached 22.1%; however, it was achieved at a very small device area of <0.1 cm2. With the device area increasing to mini-module scale, the efficiency record dropped dramatically. The inherent causes are mainly ascribed to inadequate quality control of large-area perovskite thin films and insufficient optimization of solar module design. In current stage of PSCs research and development, to overcome these two obstacles is in urgent need before this new technology could realize scale-up industrialization. Herein, we present an overview of recently developed strategies for preparing large-area perovskite thin films and perovskite solar modules (PSMs. At last, cost analysis and future application directions of PSMs have also been discussed.

  15. Refractive index modulation of Sb70Te30 phase-change thin films by multiple femtosecond laser pulses

    Lei, Kai; Wang, Yang; Jiang, Minghui; Wu, Yiqun

    2016-01-01

    In this study, the controllable effective refractive index modulation of Sb 70 Te 30 phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

  16. Glass transition in thin supported polystyrene films probed by temperature-modulated ellipsometry in vacuum.

    Efremov, Mikhail Yu; Kiyanova, Anna V; Last, Julie; Soofi, Shauheen S; Thode, Christopher; Nealey, Paul F

    2012-08-01

    Glass transition in thin (1-200 nm thick) spin-cast polystyrene films on silicon surfaces is probed by ellipsometry in a controlled vacuum environment. A temperature-modulated modification of the method is used alongside a traditional linear temperature scan. A clear glass transition is detected in films with thicknesses as low as 1-2 nm. The glass transition temperature (T(g)) shows no substantial dependence on thickness for coatings greater than 20 nm. Thinner films demonstrate moderate T(g) depression achieving 18 K for thicknesses 4-7 nm. Less than 4 nm thick samples are excluded from the T(g) comparison due to significant thickness nonuniformity (surface roughness). The transition in 10-20 nm thick films demonstrates excessive broadening. For some samples, the broadened transition is clearly resolved into two separate transitions. The thickness dependence of the glass transition can be well described by a simple 2-layer model. It is also shown that T(g) depression in 5 nm thick films is not sensitive to a wide range of experimental factors including molecular weight characteristics of the polymer, specifications of solvent used for spin casting, substrate composition, and pretreatment of the substrate surface.

  17. Experiences on the integration of thin film photovoltaic modules in a Mediterranean greenhouse

    Urena, R.; Perez, J.; Carreno, A.; Callejon, A.J.; Vazquez, F.J. [Almeria Univ., Almeria (Spain). Dept. of Rural Engineering; Perez, M. [Almeria Univ., Almeria (Spain). CIESOL Research Center on Solar Energy

    2010-07-01

    This paper discussed the use of photovoltaic (PV) thin film modules in solar based energy generation systems in greenhouses in Spain, where feed-in tariffs for renewable energy sources serve to increase the yearly income of such agricultural exploitations. Experiments were performed at the University of Almeria, where a 1000 m{sup 2} pilot installation was built and monitored to analyze the key features of the system design and functionalities in terms of overall electricity injected into the grid as well as crop productivity. The installation involved dividing the greenhouse sections into 2 identical and contiguous sections, where one of the roof sections was equipped with a set of carefully designed thin film PV module strips. Both sections were grown under similar conditions for a period of 6 months. Continuous monitoring of the power injected to the grid showed that such a system is feasible. In terms of greenhouse crop results, this study showed that there is need for further research regarding the impact of changes in optical properties to the roof by the PV strips that reduced the available PV active radiation (PAR light) for crops.

  18. Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules

    Steinberger, H.; Thumm, W.; Freitag, R.; Moskowitz, P.D.; Chapin, R.

    1994-01-01

    Copper-indium-diselenide (CIS) is a semiconductor compound that can be used to produce thin-film photovoltaic modules. There is on-going research being conducted by various federal agencies and private industries to demonstrate the commercial viability of this material. Because this is a new technology, and because scant information about the health and environmental hazards associated with the use of this material is available, studies have been initiated to characterize the environmental mobility and environmental toxicology of this compound. The objective of these studies is to identify the environmental and health hazards associated with the production, use, and disposal of CIS thin-film photovoltaic modules. The program includes both experimental and theoretical components. Theoretical studies are being undertaken to estimate material flows through the environment for a range of production options as well as use and disposal scenarios. The experimental programs characterize the physical, chemical e.g. leachability and biological parameters e.g. EC 50 in daphnia and algae, and feeding studies in rats

  19. Thin Film CIGS Solar Cells, Photovoltaic Modules, and the Problems of Modeling

    Antonino Parisi

    2013-01-01

    Full Text Available Starting from the results regarding a nonvacuum technique to fabricate CIGS thin films for solar cells by means of single-step electrodeposition, we focus on the methodological problems of modeling at cell structure and photovoltaic module levels. As a matter of fact, electrodeposition is known as a practical alternative to costly vacuum-based technologies for semiconductor processing in the photovoltaic device sector, but it can lead to quite different structural and electrical properties. For this reason, a greater effort is required to ensure that the perspectives of the electrical engineer and the material scientist are given an opportunity for a closer comparison and a common language. Derived parameters from ongoing experiments have been used for simulation with the different approaches, in order to develop a set of tools which can be used to put together modeling both at single cell structure and complete module levels.

  20. Reliability and Engineering of Thin-Film Photovoltaic Modules. Research forum proceedings

    Ross, R. G., Jr. (Editor); Royal, E. L. (Editor)

    1985-01-01

    A Research Forum on Reliability and Engineering of Thin Film Photovoltaic Modules, under sponsorship of the Jet Propulsion Laboratory's Flat Plate Solar Array (FSA) Project and the U.S. Department of Energy, was held in Washington, D.C., on March 20, 1985. Reliability attribute investigations of amorphous silicon cells, submodules, and modules were the subjects addressed by most of the Forum presentations. Included among the reliability research investigations reported were: Arrhenius-modeled accelerated stress tests on a Si cells, electrochemical corrosion, light induced effects and their potential effects on stability and reliability measurement methods, laser scribing considerations, and determination of degradation rates and mechanisms from both laboratory and outdoor exposure tests.

  1. Thin Film Photovoltaics

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  2. Optical Modulation of BST/STO Thin Films in the Terahertz Range

    Zeng, Ying; Shi, Songjie; Zhou, Ling; Ling, Furi; Yao, Jianquan

    2018-04-01

    The {Ba}_{0.7} {Sr}_{0.3} {TiO}3 (BST) thin film (30.3 nm) deposited on a {SrTiO}3 (STO) film/silicon substrate sample was modulated by 532 nm continuous-wave laser in the range of 0.2-1 THz at room temperature. The refractive index variation was observed to linearly increase at the highest 3.48 for 0.5 THz with the pump power increasing to 400 mW. It was also found that the BST/STO sample had a larger refractive index variation and was more sensitive to the external optical field than a BST monolayer due to the epitaxial strain induced by the STO film. The electric displacement-electric field loops results revealed that the increasing spontaneous polarization with the STO film that was induced was responsible for the larger refractive index variation of the BST/STO sample. In addition, the real and imaginary part of the permittivity were observed increasing along with the external field increasing, due to the soft mode hardening.

  3. Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

    Lay-Ekuakille, A; Arnesano, A; Vergallo, P

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  4. Thin films: Past, present, future

    Zweibel, K

    1995-04-01

    This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

  5. Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

    Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji

    2014-01-01

    We report the electric-field modulation of magnetism of a hexagonal Cr 1-δ Te thin film. A gate voltage V G is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr 1-δ Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr 1-δ Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

    Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji [Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-07-15

    We report the electric-field modulation of magnetism of a hexagonal Cr{sub 1-δ}Te thin film. A gate voltage V{sub G} is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr{sub 1-δ}Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr{sub 1-δ}Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Thin films

    Strongin, M.; Miller, D.L.

    1976-01-01

    This article reviews the phenomena that occur in films from the point of view of a solid state physicist. Films form the basis for many established and developing technologies. Metal layers have always been important for optical coatings and as protective coatings. In the most sophisticated cases, films and their interaction on silicon surfaces form the basis of modern electronic technology. Films of silicon, GaAs and composites of these materials promise to lead to practical photovoltaic devices

  8. Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

    Hassan, Ali; Jin, Yuhua; Irfan, Muhammad; Jiang, Yijian

    2018-03-01

    Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM) analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (˜ 6 nm to 10 nm) and surface roughness rms value 3 nm for thickness ˜315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV) region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

  9. Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

    Ali Hassan

    2018-03-01

    Full Text Available Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (∼ 6 nm to 10 nm and surface roughness rms value 3 nm for thickness ∼315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD, Energy Dispersive X-ray Spectroscopy (EDS and X-ray Photoelectron Spectroscopy (XPS have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

  10. Commercial production of thin-film CdTe photovoltaic modules. 1995 annual report

    Brog, T.K. [Golden Photon, Inc., CO (United States)

    1997-02-01

    This report presents a general overview of progress made in Golden Photon Inc.`s commercial production of thin-film CdTe photovoltaic modules. It describes the improvement in the number of batch runs processed through substrate deposition, all inter-connection, and encapsulation process steps; a progressive increase in the total number of panels processed each month; an improvement in cumulative process yields; and the continual attention given to modifying operating parameters of each major process step. The report also describes manpower status and staffing issues. The description of the status of subcontract progress includes engineering design; process improvement and development; cost improvement and raw materials; environment, safety, and health; and manufacturing cost and productivity optimization. Milestones and deliverables are also described.

  11. Thin-film solar cells

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  12. Economic viability of thin-film tandem solar modules in the United States

    Sofia, Sarah E.; Mailoa, Jonathan P.; Weiss, Dirk N.; Stanbery, Billy J.; Buonassisi, Tonio; Peters, I. Marius

    2018-05-01

    Tandem solar cells are more efficient but more expensive per unit area than established single-junction (SJ) solar cells. To understand when specific tandem architectures should be utilized, we evaluate the cost-effectiveness of different II-VI-based thin-film tandem solar cells and compare them to the SJ subcells. Levelized cost of electricity (LCOE) and energy yield are calculated for four technologies: industrial cadmium telluride and copper indium gallium selenide, and their hypothetical two-terminal (series-connected subcells) and four-terminal (electrically independent subcells) tandems, assuming record SJ quality subcells. Different climatic conditions and scales (residential and utility scale) are considered. We show that, for US residential systems with current balance-of-system costs, the four-terminal tandem has the lowest LCOE because of its superior energy yield, even though it has the highest US per watt (US W-1) module cost. For utility-scale systems, the lowest LCOE architecture is the cadmium telluride single junction, the lowest US W-1 module. The two-terminal tandem requires decreased subcell absorber costs to reach competitiveness over the four-terminal one.

  13. Thin-film photovoltaic technology

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  14. Structure, morphology and optical properties of CuInS2 thin films prepared by modulated flux deposition

    Guillen, C.; Herrero, J.; Gutierrez, M.T.; Briones, F.

    2005-01-01

    The structure, morphology and optical properties of copper indium sulfide thin films prepared by a novel modulated flux deposition procedure have been investigated for layers from 200 to 400 nm thickness. These polycrystalline CuInS 2 films grown onto glass substrates showed CuAu-like structure, similar to epitaxial CuInS 2 films grown onto monocrystalline substrates, and direct band gap values Eg=1.52-1.55 eV, optimum for single-junction photovoltaic applications. The increase in the layer thickness leads to growth of the average crystallite size and increases slightly the surface roughness and the absorption coefficient

  15. Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films

    Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

    2018-06-01

    We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.

  16. Thin film processes II

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  17. Pyrolyzed thin film carbon

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  18. Improved Laser Scribing of Transparent Conductive Oxide for Fabrication of Thin-Film Solar Module

    Egorov, F. S.; Kukin, A. V.; Terukov, E. I.; Titov, A. S.

    2018-04-01

    Nonuniform thickness of the front transparent conductive oxide (TCO) used for fabrication of thin-film solar module (TFSM) based on micromorphic technology affects P1 laser scribing (P1 scribing on the TCO front layer). A method for improvement of the thickness uniformity of the front TCO using modification of the existing system for gas supply of the LPCVD (TCO1200) vacuum setup with the aid of gasdistributing tubes is proposed. The thickness nonuniformity of the deposition procedure is decreased from 15.2 to 11.4% to improve uniformity of the resistance of the front TCO and light-scattering factor of TFSM. In addition, the number of P1 laser scribes with inadmissible resistance of insulation (less than 2 MΩ) is decreased by a factor of 7. A decrease in the amount of melt at the P1 scribe edges leads to an increase in the TFSM shunting resistance by 56 Ω. The TFSM output power is increased by 0.4 W due to improvement of parameters of the front TCO related to application of gas-distributing tubes.

  19. Activities of the task group 8 on thin film PV module reliability (Conference Presentation)

    Dhere, Neelkanth G.

    2016-09-01

    Photovoltaic (PV) modules and systems are being used increasingly to provide renewable energy to schools, residences, small businesses and utilities. At this time, the home owners and small businesses have considerable difficulty in detecting module and/or system degradation and especially enforcing warranty. It needs to be noted that IEC 61215-1 (test req.), -2 (test proc.) and -1-1 (c-Si) are forecasted to be circulated end of Feb 2016 and only editorial changes would be possible. 61215 series does include thin film technologies and would be replacing 61646. Moreover, IEC 61215-1, section 7.2 power output and electric circuitry does contain significant changes to acceptance criteria regarding rated label values, particularly rated power. Even though it is believed that consensus could be achieved within IEC TC82 WG2, some of the smaller players that do not participate actively in IEC TC82 - may not be surprised and must be informed. The other tech specific parts 61215-1-2 (CdTe), -1-3 (a-Si, µc-Si) and -1-4 (CIS, CIGS) are out for comments. The IEC closing date was January 29, 2016. The additions alternative damp heat (DH) test proposed Solar Frontier is being reviewed. In the past, only 600 V systems were permitted in the grid-connected residential and commercial systems in the US. The US commercial systems can now use higher voltage (1,000-1500V) in order to reduce BOS component costs. It is believed that there would not be any problems. The Task Group 8 is collecting data on higher voltage systems.

  20. Metal-to-Insulator Transition in Anatase TiO2 Thin Films Induced by Growth Rate Modulation

    Tachikawa, Takashi

    2012-01-01

    We demonstrate control of the carrier density of single phase anatase TiO 2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO 2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.

  1. Light management in large area thin-film silicon solar modules

    Losio, P.A.; Caglar, O.; Cashmore, J.S.; Hötzel, J.E.; Ristau, S.; Holovský, Jakub; Remeš, Zdeněk; Sinicco, I.

    2015-01-01

    Roč. 143, Dec (2015), s. 375-385 ISSN 0927-0248 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:68378271 Keywords : micromorph * thin-film silicon solar cells * light management * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

  2. Degradation of gas-phase trichloroethylene over thin-film TiO2 photocatalyst in multi-modules reactor

    Kim, Sang Bum; Lee, Jun Yub; Kim, Gyung Soo; Hong, Sung Chang

    2009-01-01

    The present paper examined the photocatalytic degradation (PCD) of gas-phase trichloroethylene (TCE) over thin-film TiO 2 . A large-scale treatment of TCE was carried out using scale-up continuous flow photo-reactor in which nine reactors were arranged in parallel and series. The parallel or serial arrangement is a significant factor to determine the special arrangement of whole reactor module as well as to compact the multi-modules in a continuous flow reactor. The conversion of TCE according to the space time was nearly same for parallel and serial connection of the reactors.

  3. Nanosecond Time-Resolved Microscopic Gate-Modulation Imaging of Polycrystalline Organic Thin-Film Transistors

    Matsuoka, Satoshi; Tsutsumi, Jun'ya; Matsui, Hiroyuki; Kamata, Toshihide; Hasegawa, Tatsuo

    2018-02-01

    We develop a time-resolved microscopic gate-modulation (μ GM ) imaging technique to investigate the temporal evolution of the channel current and accumulated charges in polycrystalline pentacene thin-film transistors (TFTs). A time resolution of as high as 50 ns is achieved by using a fast image-intensifier system that could amplify a series of instantaneous optical microscopic images acquired at various time intervals after the stepped gate bias is switched on. The differential images obtained by subtracting the gate-off image allows us to acquire a series of temporal μ GM images that clearly show the gradual propagation of both channel charges and leaked gate fields within the polycrystalline channel layers. The frontal positions for the propagations of both channel charges and leaked gate fields coincide at all the time intervals, demonstrating that the layered gate dielectric capacitors are successively transversely charged up along the direction of current propagation. The initial μ GM images also indicate that the electric field effect is originally concentrated around a limited area with a width of a few micrometers bordering the channel-electrode interface, and that the field intensity reaches a maximum after 200 ns and then decays. The time required for charge propagation over the whole channel region with a length of 100 μ m is estimated at about 900 ns, which is consistent with the measured field-effect mobility and the temporal-response model for organic TFTs. The effect of grain boundaries can be also visualized by comparison of the μ GM images for the transient and the steady states, which confirms that the potential barriers at the grain boundaries cause the transient shift in the accumulated charges or the transient accumulation of additional charges around the grain boundaries.

  4. Transparent Patch Antenna on a-Si Thin Film Glass Solar Module

    Roo Ons, Maria; Shynu, S.; Ammann, Max; McCormack, Sarah; Norton, Brian

    2011-01-01

    An optically transparent microstrip patch mounted on the surface of a commercially available solar module is proposed. The patch comprises a thin sheet of clear polyester with a conductive coating. The amorphous silicon solar cells in the module are used as both photovoltaic generator and antenna ground plane. The proposed structure provides a peak gain of 3.96 dBi in the 3.4-3.8 GHz range without significantly compromising the light transmission in the module. A comparison between copper and...

  5. Ceramic Composite Thin Films

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  6. Thin Film & Deposition Systems (Windows)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  7. Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy

    Saito, K.; Nishimura, K.; Suzuki, H.; Ohshita, Y.; Yamaguchi, M.

    2008-01-01

    The amount of residual H in the GaAsN film grown by chemical beam epitaxy (CBE) can be decreased by flow rate modulation growth. Many H atoms in the films grown by CBE exist as N-H or N-H 2 structures. Although a higher growth temperature was required for decreasing the H concentration ([H]), it caused a decrease in the N concentration ([N]). A reduction in [H] while keeping [N] constant was necessary. By providing an intermittent supply of Ga source while continuously supplying As and N sources, [H] effectively decreased in comparison with the [H] value in the film grown at the same temperature by conventional CBE without reducing [N

  8. Investigations on the role of alkali to obtain modulated defect concentrations for Cu{sub 2}O thin films

    Chowdhury, Anirban, E-mail: anirban.chowdhury@gmail.com [Research and Development, Tata Steel Limited, Jamshedpur, 831001 (India); Bijalwan, Pavan Kumar [Research and Development, Tata Steel Limited, Jamshedpur, 831001 (India); Sahu, Ranjan Kumar [MST Division, CSIR-National Metallurgical Laboratory, Jamshedpur, 831007 (India)

    2014-01-15

    An economic successive ionic layer adsorption and reaction (SILAR) method has been investigated for depositing thin Cu{sub 2}O layers on steel. The mole ratios of the Cu{sup +} ions to OH{sup −} ions in the alkali bath were varied and the changes in the properties were characterised by X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy, scanning electron microscopy (SEM) and Ultraviolet–visible spectroscopy techniques. The increase in the binding energy values of the Cu 2p peaks in XPS established that an optimum copper vacancy concentration can be obtained for a Cu{sup +}/OH{sup −} mole ratio between 1:10 and 1:15; SEM studies confirmed a dense, uniform microstructure for Cu{sub 2}O thin films coated with these compositions. The strongest absolute peak intensity counts in PL for the peak at 580 nm along with low energy peaks (1.2–1.4 eV) due to Cu vacancy was found to be most prominent for thin film made with Cu{sup +}/OH{sup −} mole ratio 1:15. The role of alkali concentration has been explained in relation to create a stable Cu{sub 2−δ}O structure with optimum copper vacancy. This is an easy way to modulate surface reactivity of the Cu{sub 2}O thin layers and the concept can be utilised for large area device integrations for various electrical and mechanical applications.

  9. Metal-to-Insulator Transition in Anatase TiO2 Thin Films Induced by Growth Rate Modulation

    Tachikawa, T; Minohara, M.; Nakanishi, Y.; Hikita, Y.; Yoshita, M.; Akiyama, H.; Bell, C.; Hwang, H.Y.

    2012-06-21

    We demonstrate control of the carrier density of single phase anatase TiO{sub 2} thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO{sub 2} samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.

  10. Manipulating femtosecond laser interactions in bulk glass and thin-film with spatial light modulation (Conference Presentation)

    Alimohammadian, Ehsan; Ho, Stephen; Ertorer, Erden; Gherghe, Sebastian; Li, Jianzhao; Herman, Peter R.

    2017-03-01

    Spatial Light Modulators (SLM) are emerging as a power tool for laser beam shaping whereby digitally addressed phase shifts can impose computer-generated hologram patterns on incoming laser light. SLM provide several additional advantages with ultrashort-pulsed lasers in controlling the shape of both surface and internal interactions with materials. Inside transparent materials, nonlinear optical effects can confine strong absorption only to the focal volume, extend dissipation over long filament tracks, or reach below diffraction-limited spot sizes. Hence, SLM beam shaping has been widely adopted for laser material processing applications that include parallel structuring, filamentation, fiber Bragg grating formation and optical aberration correction. This paper reports on a range of SLM applications we have studied in femtosecond processing of transparent glasses and thin films. Laser phase-fronts were tailored by the SLM to compensate for spherical surface aberration, and to further address the nonlinear interactions that interplay between Kerr-lens self-focusing and plasma defocusing effects over shallow and deep focusing inside the glass. Limits of strong and weak focusing were examined around the respective formation of low-loss optical waveguides and long uniform filament tracks. Further, we have employed the SLM for beam patterning inside thin film, exploring the limits of phase noise, resolution and fringe contrast during interferometric intra-film structuring. Femtosecond laser pulses of 200 fs pulse duration and 515 nm wavelength were shaped by a phase-only LCOS-SLM (Hamamatsu X10468-04). By imposing radial phase profiles, axicon, grating and beam splitting gratings, volume shape control of filament diameter, length, and uniformity as well as simultaneous formation of multiple filaments has been demonstrated. Similarly, competing effects of spherical surface aberration, self-focusing, and plasma de-focusing were studied and delineated to enable formation

  11. Refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films by multiple femtosecond laser pulses

    Lei, Kai; Wang, Yang, E-mail: ywang@siom.ac.cn; Jiang, Minghui; Wu, Yiqun [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2016-05-07

    In this study, the controllable effective refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

  12. Design and fabrication of inner-selective thin-film composite (TFC) hollow fiber modules for pressure retarded osmosis (PRO)

    Wan, Chun Feng; Li, Bofan; Yang, Tianshi; Chung, Neal Tai-Shung

    2016-01-01

    Pressure retarded osmosis (PRO) is a promising technology to harvest the renewable osmotic energy from salinity gradients. There are great progresses in the fabrication of PRO membranes in the last decade. Thin-film composite (TFC) hollow fibers have been widely studied and demonstrated superior performance. However, the lack of effective TFC hollow fiber modules hinders the commercialization of the PRO technology. Knowledge and experiences to fabricate TFC hollow fiber modules remain limited in the open literature. In this study, we aim to reveal the engineering and science on how to fabricate TFC hollow fiber modules including the formation of inner-selective polyamide layers and the repair of leakages. TFC-PES hollow fiber modules with 30% and 50% packing densities have been successfully fabricated, showing peak power densities of 20.0 W/m2 and 19.4 W/m2, respectively, at 20 bar using 1 M NaCl solution and DI water as feeds. The modules may be damaged during handling and high pressure testing. The repaired modules have a power density of 18.2 W/m2, 91% of the power densities of the undamaged ones. This study would make up the gap between TFC membrane fabrication and TFC membrane module fabrication in the membrane industry. © 2016 Elsevier B.V.

  13. Design and fabrication of inner-selective thin-film composite (TFC) hollow fiber modules for pressure retarded osmosis (PRO)

    Wan, Chun Feng

    2016-08-03

    Pressure retarded osmosis (PRO) is a promising technology to harvest the renewable osmotic energy from salinity gradients. There are great progresses in the fabrication of PRO membranes in the last decade. Thin-film composite (TFC) hollow fibers have been widely studied and demonstrated superior performance. However, the lack of effective TFC hollow fiber modules hinders the commercialization of the PRO technology. Knowledge and experiences to fabricate TFC hollow fiber modules remain limited in the open literature. In this study, we aim to reveal the engineering and science on how to fabricate TFC hollow fiber modules including the formation of inner-selective polyamide layers and the repair of leakages. TFC-PES hollow fiber modules with 30% and 50% packing densities have been successfully fabricated, showing peak power densities of 20.0 W/m2 and 19.4 W/m2, respectively, at 20 bar using 1 M NaCl solution and DI water as feeds. The modules may be damaged during handling and high pressure testing. The repaired modules have a power density of 18.2 W/m2, 91% of the power densities of the undamaged ones. This study would make up the gap between TFC membrane fabrication and TFC membrane module fabrication in the membrane industry. © 2016 Elsevier B.V.

  14. Biomimetic thin film synthesis

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  15. Health, safety and environmental risks from the operation of CdTe and CIS thin-film modules

    Steinberger, Hartmut

    1998-01-01

    This paper identifies the materials embedded in on a type of CIS (Copper indium diselenide) and four different types of CdTe (cadmium telluride) thin-film modules. It refers to the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments. Estimations for modules accidents on the roof or in the garden of a residential house, e.g. leaching of hazardous materials into water or soil, are given. The outcomes of our estimations show some module materials released into water or oil during leaching accidents. In a worst-case scenario for CdTe modules the leached cadmium concentration in the collected water is estimated to be no higher than the German drinking water limit concentration. For the CIS module scenario the estimated leached element concentrations are about one to two orders of magnitude below the German drinking water limit concentration. For broken CIS and CdTe modules on the ground no critical increase of the natural element concentration is observed after leaching into the soil for 1 year. (Author)

  16. Thin film device applications

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  17. Thin film tritium dosimetry

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  18. Study on analytical modelling approaches to the performance of thin film PV modules in sunny inland climates

    Torres-Ramírez, M.; Nofuentes, G.; Silva, J.P.; Silvestre, S.; Muñoz, J.V.

    2014-01-01

    This work is aimed at verifying that analytical modelling approaches may provide an estimation of the outdoor performance of TF (thin film) PV (photovoltaic) technologies in inland sites with sunny climates with adequate accuracy for engineering purposes. Osterwald's and constant fill factor methods were tried to model the maximum power delivered and the annual energy produced by PV modules corresponding to four TF PV technologies. Only calibrated electrical parameters at STC (standard test conditions), on-plane global irradiance and module temperature are required as inputs. A 12-month experimental campaign carried out in Madrid and Jaén (Spain) provided the necessary data. Modelled maximum power and annual energy values obtained through both methods were statistically compared to the experimental ones. In power terms, the RMSE (root mean square error) stays below 3.8% and 4.5% for CdTe (cadmium telluride) and CIGS (copper indium gallium selenide sulfide) PV modules, respectively, while RMSE exceeds 5.4% for a-Si (amorphous silicon) or a-Si:H/μc-Si PV modules. Regarding energy terms, errors lie below 4.0% in all cases. Thus, the methods tried may be used to model the outdoor behaviour of the a-Si, a-Si:H/μc-Si, CIGS and CdTe PV modules tested – ordered from the lowest to the highest accuracy obtained – in sites with similar spectral characteristics to those of the two sites considered. - Highlights: • Simple analytical methods to model the outdoor behaviour of thin film PV (photovoltaic) technologies. • 8 PV modules were deployed outdoors over a 12-month period in two sunny inland sites. • RMSE (root mean square error) values stay below 3.8% and 4.5% in CdTe (cadmium telluride) and CIGS (copper indium gallium selenide sulfide) PV modules. • Errors remain below 4.0% for all the PV modules and sites in energy terms. • Simple methods: suitable estimation of PV outdoor behaviour for engineering purposes

  19. Preparation of multilayered nanocrystalline thin films with composition-modulated interfaces

    Biro, D.; Barna, P.B.; Szekely, L.; Geszti, O.; Hattori, T.; Devenyi, A.

    2008-01-01

    The properties of multilayer thin film structures depend on the morphology and structure of interfaces. A broad interface, in which the composition is varying, can enhance, e.g., the hardness of multilayer thin films. In the present experiments multilayers of TiAlN and CrN as well as TiAlN, CrN and MoS 2 were studied by using unbalanced magnetron sputter sources. The sputter sources were arranged side by side on an arc. This arrangement permits development of a transition zone between the layers, where the composition changes continuously. The multilayer system was deposited by one-fold oscillating movement of substrates in front of sputter sources. Thicknesses of layers could be changed both by oscillation frequency and by the power applied to sputter sources. Ti/Al: 50/50 at%, pure chromium and MoS 2 targets were used in the sputter sources. The depositions were performed in an Ar-N 2 mixture at 0.22 Pa working pressure. The sputtering power of the TiAl source was feed-back adjusted in fuzzy-logic mode in order to avoid fluctuation of the TiAl target sputter rate due to poisoning of the target surface. Structure characterization of films deposited on Si wafers covered by thermally grown SiO 2 was performed by cross-sectional transmission electron microscopy. At first a 100 nm thick Cr base layer was deposited on the substrate to improve adhesion, which was followed by a CrN transition layer. The CrN transition layer was followed by a 100 nm thick TiAlN/CrN multilayer system. The TiAlN/CrN/MoS 2 multilayer system was deposited on the surface of this underlayer system. The underlayer systems Cr, CrN and TiAlN/CrN were crystalline with columnar structure according to the morphology of zone T of the structure zone models. The column boundaries contained segregated phases showing up in the under-focused TEM images. The surface of the underlayer system was wavy due to dome-shaped columns. The nanometer-scaled TiAlN/CrN/MoS 2 multilayer system followed this waviness

  20. Thin films and nanomaterials

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  1. Field-modulation spectroscopy of pentacene thin films using field-effect devices: Reconsideration of the excitonic structure

    Haas, Simon; Matsui, Hiroyuki; Hasegawa, Tatsuo

    2010-10-01

    We report pure electric-field effects on the excitonic absorbance of pentacene thin films as measured by unipolar field-effect devices that allowed us to separate the charge accumulation effects. The field-modulated spectra between 1.8 and 2.6 eV can be well fitted with the first derivative curve of Frenkel exciton absorption and its vibronic progression, and at higher energy a field-induced feature appears at around 2.95 eV. The results are in sharp contrast to the electroabsorption spectra reported by Sebastian in previous studies [Chem. Phys. 61, 125 (1981)10.1016/0301-0104(81)85055-0], and leads us to reconsider the excitonic structure including the location of charge-transfer excitons. Nonlinear π -electronic response is discussed based on second-order electro-optic (Kerr) spectra.

  2. Thin Film Microbatteries

    Dudney, Nancy J.

    2008-01-01

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  3. Optical thin film deposition

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  4. Thin film ceramic thermocouples

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  5. Solar Spectral and Module Temperature Influence on the Outdoor Performance of Thin Film PV Modules Deployed on a Sunny Inland Site

    G. Nofuentes

    2013-01-01

    Full Text Available This work aims at analysing the influence of both module temperature and solar spectrum distribution on the outdoor performance of the following thin film technologies: hydrogenated amorphous silicon (a-Si:H, cadmium telluride (CdTe, copper indium gallium selenide sulfide (CIGS, and hydrogenated amorphous silicon/hydrogenated microcrystalline silicon hetero-junction (a-Si:H/μc-Si:H. A 12-month experimental campaign carried out in a sunny inland site in which a module of each one of these technologies was tested and measured outdoors has provided the necessary empirical data. Results show that module temperature exerts a limited influence on the performance of the tested a-Si:H, CdTe, and a-Si:H/μc-Si:H modules. In contrast, the outdoor behaviour of the CIGS module is the most affected by its temperature. Blue-rich spectra enhance the outdoor behaviour of the a-Si:H and a-Si:H/μc-Si:H modules while it is the other way round for the CIGS module. However, the CdTe specimen shows little sensitivity to the solar spectrum distribution. Anyway, spectral effects are scarcely relevant on an annual basis, ranging from gains for the CIGS module (1.5% to losses for the a-Si:H module (1.0%. However, the seasonal impact of the spectrum shape is more noticeable in these two materials; indeed, spectral issues may cause performance gains or losses of up to some 4% when winter and summer periods are considered.

  6. Thin film metal-oxides

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  7. NMR characterization of thin films

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  8. NMR characterization of thin films

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  9. Rare Earth Oxide Thin Films

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  10. Selective inorganic thin films

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  11. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of next-generation thin-film solar cell manufacturing technology - Development of thin-film polycrystalline solar cell module manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)

    NONE

    1999-03-01

    The aim is to realize the practical application of the above-named solar module expected to exhibit higher efficiency and reliability and achieve cost reduction through consumption of less materials. In fiscal 1998, 1) technologies were developed to reduce substrate warpage during recrystallization for the higher-throughput fabrication of high-quality thin films and 2) technologies were also developed for the realization of higher-throughput fabrication of thin films and for efficiency improvement for thin-film modules. Under item 1), experiments were conducted by simulation for reducing warpage to occur in thin-film polycrystalline Si substrates during fabrication by melting and recrystallization. Under item 2), for the development of thin-film cell high-throughput technologies, studies were started on a more practical hydrogen plasma process to challenge the conventional process of crystal defect inactivation by hydrogen ion injection with which achievement of high throughputs is difficult. For the development of technologies for the enhancement of thin-film module efficiency, efforts were exerted to realize a 10cm times 10cm square shape for the enhancement of efficiency in the process of filling modules with cells. These efforts achieved a great step toward future practical application. (NEDO)

  12. Superconducting oxypnictide thin films

    Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

    2012-07-01

    We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.

  13. Mechanics of Thin Films

    1992-02-06

    and the second geometry was that of squat cylinders (diameter 6.4 mm, height 6.4 mm). These two geometries were tested in thermal shock tests, and a...milder [13]. More recently, Lau, Rahman and stressa nce ntrati, tha n films of lmalla rat ve spc Delale calculated the free edge singularity for stress...thickness of 3 mm); the second geometry was that As an example of the shielding effect of thin films, we of squat cylinders (diameter 6.4 mm, height 6.4

  14. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, next generation thin film solar cell module manufacturing technologies, development of thin film poly-crystalline solar cell module manufacturing technologies); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)))

    NONE

    2000-03-01

    Research and development has been performed on a high throughput forming technology and a modularization technology for thin film poly-crystalline solar cell modules. This paper summarizes the achievements in fiscal 1999. In developing the high throughput forming technology for a high-quality thin film, research has been made on a low-cost VEST process to re-utilize substrates by separating the thin film from the substrate. In the melting re-crystallization process, it was discovered that plasticity deformation of the substrate can be reduced greatly by raising the substrate heating temperatures. It was also found out that substrate warping amount can be reduced to about one-fifth of the conventional amount by making the thickness greater than 1.5 mm and raising the heating temperatures higher than 1300 degree C. In developing the thin film modularization technology, it was indicated that the property improving effect remains the same even if the hydrogen passivation method is changed from the hydrogen ion injection to the hydrogen plasma processing. In the trial fabrication of the thin film modules, a conversion efficiency of 13.1% was achieved in nine-cell structured modules. (NEDO)

  15. Thin film processes

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  16. Handbook of thin film technology

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  17. High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

    Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

    2015-11-01

    High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Comparison of efficiency degradation in polycrystalline-Si and CdTe thin-film PV modules via accelerated lifecycle testing

    Lai, T.; Potter, B. G.; Simmons-Potter, K.

    2017-08-01

    Thin-film solar cells normally have the shortest energy payback time due to their simpler mass-production process compared to polycrystalline-Si photovoltaic (PV) modules, despite the fact that crystalline-Si-based technology typically has a longer total lifetime and a higher initial power conversion efficiency. For both types of modules, significant aging occurs during the first two years of usage with slower long-term aging over the module lifetime. The PV lifetime and the return-on-investment for local PV system installations rely on long-term device performance. Understanding the efficiency degradation behavior under a given set of environmental conditions is, therefore, a primary goal for experimental research and economic analysis. In the present work, in-situ measurements of key electrical characteristics (J, V, Pmax, etc.) in polycrystalline-Si and CdTe thin-film PV modules have been analyzed. The modules were subjected to identical environmental conditions, representative of southern Arizona, in a full-scale, industrial-standard, environmental degradation chamber, equipped with a single-sun irradiance source, temperature, and humidity controls, and operating an accelerated lifecycle test (ALT) sequence. Initial results highlight differences in module performance with environmental conditions, including temperature de-rating effects, for the two technologies. Notably, the thin-film CdTe PV module was shown to be approximately 15% less sensitive to ambient temperature variation. After exposure to a seven-month equivalent compressed night-day weather cycling regimen the efficiency degradation rates of both PV technology types were obtained and will be discussed.

  19. Thin films for precision optics

    Araujo, J.F.; Maurici, N.; Castro, J.C. de

    1983-01-01

    The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

  20. Microstructure of Thin Films

    1990-02-07

    Proceedings, Thin film Technologies II, 652, 256-263, (1986) B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier, "In situ and air index measurements...34 SPIE Proceedings, "Optical Components and Systems", 805, 128 (1987) 11 B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier. "In situ and air index...aT , m..a, lot,, o ,,f,02,d I4 k -1-1..... autocovariance lengths, less than 0.5 um, indicate that , 514n, ob0 o p’,Ofclllc....,,o,,oy0,1- agua sblrt

  1. Host thin films incorporating nanoparticles

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  2. Degradation of gas-phase trichloroethylene over thin-film TiO{sub 2} photocatalyst in multi-modules reactor

    Kim, Sang Bum [New and Renewable Energy Team, Environment and Energy Division, Korea Institute of Industrial Technology (Korea, Republic of); Lee, Jun Yub, E-mail: ljy02191@hanafos.com [Power Engineering Research Institute, Korea Power Engineering Company, Inc. (Korea, Republic of); Kim, Gyung Soo [New and Renewable Energy Team, Environment and Energy Division, Korea Institute of Industrial Technology (Korea, Republic of); Hong, Sung Chang [Department of Environmental Engineering, Kyonggi University (Korea, Republic of)

    2009-07-30

    The present paper examined the photocatalytic degradation (PCD) of gas-phase trichloroethylene (TCE) over thin-film TiO{sub 2}. A large-scale treatment of TCE was carried out using scale-up continuous flow photo-reactor in which nine reactors were arranged in parallel and series. The parallel or serial arrangement is a significant factor to determine the special arrangement of whole reactor module as well as to compact the multi-modules in a continuous flow reactor. The conversion of TCE according to the space time was nearly same for parallel and serial connection of the reactors.

  3. All-optical short pulse translation through cross-phase modulation in a VO₂ thin film.

    Fardad, Shima; Das, Susobhan; Salandrino, Alessandro; Breckenfeld, Eric; Kim, Heungsoo; Wu, Judy; Hui, Rongqing

    2016-01-15

    VO2 is a promising material for reconfigurable photonic devices due to the ultrafast changes in electronic and optical properties associated with its dielectric-to-metal phase transition. Based on a fiber-optic, pump-probe setup at 1550 nm wavelength window, and by varying the pump-pulse duration, we show that the material phase transition is primarily caused by the pump-pulse energy. For the first time, we demonstrate that the instantaneous optical phase modulation of probe during pump leading edge can be utilized to create short optical pulses at probe wavelength, through optical frequency discrimination. This circumvents the impact of long recovery time well known for the phase transition of VO2.

  4. Polymer Thin Film Stabilization.

    Costa, A. C.; Oslanec, R.; Composto, R. J.; Vlcek, P.

    1998-03-01

    We study the dewetting dynamics of thin polystyrene (PS) films deposited on silicon oxide surfaces using optical (OM) and atomic force (AFM) microscopes. Quantitative analysis of the hole diameter as a function of annealing time at 175^oC shows that blending poly(styrene-block-methyl-methacrylate) (PS-b-PMMA) with PS acts to dramatically slow down the dewetting rate and even stops holes growth before they impinge. AFM studies show that the hole floor is smooth for a pure PS film but contains residual polymer for the blend. At 5% vol., a PS-b-PMMA with high molar mass and low PMMA is a more effective stabilizing agent than a low molar mass/high PMMA additive. The optimum copolymer concentration is 3% vol. beyond which film stability doesn't improve. Although dewetting is slowed down relative to pure PS, PS/PS-b-PMMA bilayers dewet at a faster rate than blends having the same overall additive concentration.

  5. Thin-film solar cell

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  6. Microscopic hole-transfer efficiency in organic thin-film transistors studied with charge-modulation spectroscopy

    Miyata, Kiyoshi; Tanaka, Shunsuke; Ishino, Yuuta; Watanabe, Kazuya; Uemura, Takafumi; Takeya, Jun; Sugimoto, Toshiki; Matsumoto, Yoshiyasu

    2015-01-01

    While the microscopic transfer properties of carriers are of primary importance for carrier transport of organic semiconductors, the mesoscopic features including the morphologies of grains and the structure of grain boundaries limit the overall carrier transport particularly in polycrystalline organic thin films. Thus the conventional evaluation methods of carrier mobility that rely on macroscopic properties such as I−V curves of devices are not capable to determine carrier transfer probabil...

  7. Characterization of organic thin films

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  8. Interfaces and thin films physics

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  9. Oxygen content modulation by nanoscale chemical and electrical patterning in epitaxial SrCoO3-δ (0 < δ ≤ 0.5) thin films

    Hu, S.; Seidel, J.

    2016-08-01

    Fast controllable redox reactions in solid materials at room temperature are a promising strategy for enhancing the overall performance and lifetime of many energy technology materials and devices. Easy control of oxygen content is a key concept for the realisation of fast catalysis and bulk diffusion at room temperature. Here, high quality epitaxial brownmillerite SrCoO2.5 thin films have been oxidised to perovskite (P) SrCoO3 with NaClO. X-ray diffraction, scanning probe microscopy and x-ray photoelectron spectroscopy measurements were performed to investigate the structural and electronic changes of the material. The oxidised thin films were found to exhibit distinct morphological changes from an atomically flat terrace structure to forming small nanosized islands with boundaries preferentially in [100] or [010] directions all over the surface, relaxing the in-plane strain imposed by the substrate. The conductivity, or oxygen content, of each single island is confined by these textures, which can be locally patterned even further with electric poling. The high charging level at the island boundaries indicates a magnified electric capacity of SCO thin films, which could be exploited in future device geometries. This finding represents a new way of oxygen modulation with associated self-assembled charge confinement to nanoscale boundaries, offering interesting prospects in nanotechnology applications.

  10. Thin Films in the Photovoltaic Industry

    Jaeger-Waldau, A.

    2008-03-01

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  11. Thin-Film Power Transformers

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  12. Size effects in thin films

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  13. Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films

    Rivnay, Jonathan

    2009-11-08

    Solution-processable organic semiconductors are central to developing viable printed electronics, and performance comparable to that of amorphous silicon has been reported for films grown from soluble semiconductors. However, the seemingly desirable formation of large crystalline domains introduces grain boundaries, resulting in substantial device-to-device performance variations. Indeed, for films where the grain-boundary structure is random, a few unfavourable grain boundaries may dominate device performance. Here we isolate the effects of molecular-level structure at grain boundaries by engineering the microstructure of the high-performance n-type perylenediimide semiconductor PDI8-CN 2 and analyse their consequences for charge transport. A combination of advanced X-ray scattering, first-principles computation and transistor characterization applied to PDI8-CN 2 films reveals that grain-boundary orientation modulates carrier mobility by approximately two orders of magnitude. For PDI8-CN 2 we show that the molecular packing motif (that is, herringbone versus slip-stacked) plays a decisive part in grain-boundary-induced transport anisotropy. The results of this study provide important guidelines for designing device-optimized molecular semiconductors. © 2009 Macmillan Publishers Limited. All rights reserved.

  14. Superconducting thin films

    Hebard, A.F.; Vandenberg, J.M.

    1982-01-01

    This invention relates to granular metal and metal oxide superconducting films formed by ion beam sputter deposition. Illustratively, the films comprise irregularly shaped, randomly oriented, small lead grains interspersed in an insulating lead oxide matrix. The films are hillock-resistant when subjected to thermal cycling and exhibit unusual josephson-type switching characteristics. Depending on the oxygen content, a film may behave in a manner similar to that of a plurality of series connected josephson junctions, or the film may have a voltage difference in a direction parallel to a major surface of the film that is capable of being switched from zero voltage difference to a finite voltage difference in response to a current larger than the critical current

  15. Thin-film silicon solar cell technology

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  16. Beryllium thin films for resistor applications

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  17. Functional Layer-by-Layer Thin Films of Inducible Nitric Oxide (NO) Synthase Oxygenase and Polyethylenimine: Modulation of Enzyme Loading and NO-Release Activity.

    Gunasekera, Bhagya; Abou Diwan, Charbel; Altawallbeh, Ghaith; Kalil, Haitham; Maher, Shaimaa; Xu, Song; Bayachou, Mekki

    2018-03-07

    Nitric oxide (NO) release counteracts platelet aggregation and prevents the thrombosis cascade in the inner walls of blood vessels. NO-release coatings also prevent thrombus formation on the surface of blood-contacting medical devices. Our previous work has shown that inducible nitric oxide synthase (iNOS) films release NO fluxes upon enzymatic conversion of the substrate l-arginine. In this work, we report on the modulation of enzyme loading in layer-by-layer (LbL) thin films of inducible nitric oxide synthase oxygenase (iNOSoxy) on polyethylenimine (PEI). The layer of iNOSoxy is electrostatically adsorbed onto the PEI layer. The pH of the iNOSoxy solution affects the amount of enzyme adsorbed. The overall negative surface charge of iNOSoxy in solution depends on the pH and hence determines the density of adsorbed protein on the positively charged PEI layer. We used buffered iNOSoxy solutions adjusted to pHs 8.6 and 7.0, while saline PEI solution was used at pH 7.0. Atomic force microscopy imaging of the outermost layer shows higher protein adsorption with iNOSoxy at pH 8.6 than with a solution of iNOSoxy at pH 7.0. Graphite electrodes with PEI/iNOSoxy films show higher catalytic currents for nitric oxide reduction mediated by iNOSoxy. The higher enzyme loading translates into higher NO flux when the enzyme-modified surface is exposed to a solution containing the substrate and a source of electrons. Spectrophotometric assays showed higher NO fluxes with iNOSoxy/PEI films built at pH 8.6 than with films built at pH 7.0. Fourier transform infrared analysis of iNOSoxy adsorbed on PEI at pH 8.6 and 7.0 shows structural differences of iNOSoxy in films, which explains the observed changes in enzymatic activity. Our findings show that pH provides a strategy to optimize the NOS loading and enzyme activity in NOS-based LbL thin films, which enables improved NO release with minimum layers of PEI/NOS.

  18. Epitaxy, thin films and superlattices

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  19. Epitaxy, thin films and superlattices

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  20. Semiconductor-nanocrystal/conjugated polymer thin films

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  1. Preparation of thin vyns films

    Blanc, R.; Chedin, P.; Gizon, A.

    1965-01-01

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm 2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation [fr

  2. Defect study of Cu2ZnSn(SxSe1-x)4 thin film absorbers using photoluminescence and modulated surface photovoltage spectroscopy

    Lin, Xianzhong; Ennaoui, Ahmed; Levcenko, Sergiu; Dittrich, Thomas; Kavalakkatt, Jaison; Kretzschmar, Steffen; Unold, Thomas; Lux-Steiner, Martha Ch.

    2015-01-01

    Defect states in Cu2ZnSn(SxSe1-x)4 thin films with x = 0.28, 0.36, and 1 were studied by combining photoluminescence (PL) and modulated surface photovoltage (SPV) spectroscopy. A single broad band emission in the PL spectra was observed and can be related to quasi-donor-acceptor pair transitions. The analysis of the temperature dependent quenching of the PL band (x = 0.28, 0.36, and 1) and SPV (x = 0.28) signals resulted in activation energies below 150 meV for PL and about 90 and 300 meV for SPV. Possible intrinsic point defects that might be associated with these observed activation energies are discussed.

  3. Nanocrystal thin film fabrication methods and apparatus

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  4. Research Leading to High Throughput Processing of Thin-Film CdTe PV Module: Phase I Annual Report, October 2003 (Revised)

    Powell, R. C.; Meyers, P. V.

    2004-02-01

    Work under this subcontract contributes to the overall manufacturing operation. During Phase I, average module efficiency on the line was improved from 7.1% to 7.9%, due primarily to increased photocurrent resulting from a decrease in CdS thickness. At the same time, production volume for commercial sale increased from 1.5 to 2.5 MW/yr. First Solar is committed to commercializing CdTe-based thin-film photovoltaics. This commercialization effort includes a major addition of floor space and equipment, as well as process improvements to achieve higher efficiency and greater durability. This report presents the results of Phase I of the subcontract entitled''Research Leading to High Throughput Processing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed to begin high-volume manufacturing, including further development of the semiconductor deposition reactor, advancement of accelerated life testing methods and understanding, and improvements to th e environmental, health, and safety programs. Progress in the development of the semiconductor deposition reactor was made in several areas. First, a new style of vapor transport deposition distributor with simpler operational behavior and the potential for improved cross-web uniformity was demonstrated. Second, an improved CdS feed system that will improve down-web uniformity was developed. Third, the core of a numerical model of fluid and heat flow within the distributor was developed, including flow in a 3-component gas system at high temperature and low pressure and particle sublimation.

  5. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

    NONE

    2000-03-01

    Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

  6. Copper zinc tin sulfide-based thin film solar cells

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  7. Optical modeling and simulation of thin-film photovoltaic devices

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  8. Thin films of soft matter

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  9. Review of thin film superconductivity

    Kihlstrom, K.E.

    1989-01-01

    Advances in thin film superconductivity are critical to the success of many proposed applications. The authors review several of the prominent techniques currently used to produce thin films of the high temperature superconductors including electron beam co-deposition, sputtering (both multiple and composite source configurations) and laser ablation. The authors look at the relevant parameters for each and evaluate the advantages and disadvantages of each technique. In addition, promising work on in situ oxidation is discussed. Also addressed are efforts to find optimum substrate materials and substrate buffer layers for various applications. The current state of the art for T c , J c and H c2 is presented for the yttrium, bismuth, and thallium compounds

  10. Polycrystalline thin films : A review

    Valvoda, V [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  11. Magnetization in permalloy thin films

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron ... alloys of Ni and Fe) take an important place. NiFe alloy with a ... room temperature (∼298 K, without intentional heating) on Si(100) substrates. A base pressure of 1×10−6 mbar was achieved prior to the deposition. Three different ...

  12. Thin-Film Material Science and Processing | Materials Science | NREL

    Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

  13. Photoconductivity of thin organic films

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-01-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C 60 ), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C 60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10 3 Ω m and 3 x 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10 8 Ω m in dark to 3.1 x 10 6 Ω m under the light.

  14. Flexible thin film magnetoimpedance sensors

    Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-01-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  15. Flexible thin film magnetoimpedance sensors

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  16. Characterization of nanocrystalline cadmium telluride thin films ...

    Unknown

    tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

  17. Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films

    Rivnay, Jonathan; Jimison, Leslie H.; Northrup, John E.; Toney, Michael F.; Noriega, Rodrigo; Lu, Shaofeng; Marks, Tobin J.; Facchetti, Antonio; Salleo, Alberto

    2009-01-01

    Solution-processable organic semiconductors are central to developing viable printed electronics, and performance comparable to that of amorphous silicon has been reported for films grown from soluble semiconductors. However, the seemingly desirable

  18. Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 1 February 2005 - 31 July 2008

    Taylor, P. C.; Williams, G. A.

    2009-09-01

    Electron spin resonance and nuclear magnetic resonance was done on amorphous silicon samples (modules with a-Si:H and a-SixGe1-x:H intrinsic layer) to study defects that contribute to Staebler-Wronski effect.

  19. Thin films for emerging applications v.16

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  20. Analysis of Hard Thin Film Coating

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  1. Progress in thin film techniques

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  2. High temperature superconductor thin films

    Correra, L.

    1992-01-01

    Interdisciplinary research on superconducting oxides is the main focus of the contributors in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved. The papers are presented in five chapters, subsequently on properties, film growth and processing, substrates and multilayers, structural characterization, and applications

  3. Minerals deposited as thin films

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  4. Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

    Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

  5. Modulation of the operational characteristics of amorphous In-Ga-Zn-O thin-film transistors by In2O3 nanoparticles

    Lee, Min-Jung; Lee, Tae Il; Park, Jee Ho; Baik, Hong Koo; Myoung, Jae-Min; Kim, Jung Han; Chae, Gee Sung; Jun, Myung Chul; Hwang, Yong Kee; Lee, Woong

    2012-01-01

    The structure of thin-film transistors (TFTs) based on amorphous In-Ga-Zn-O (a-IGZO) was modified by spin coating a suspension of In 2 O 3 nanoparticles on a SiO 2 /p ++ Si layered wafer surface prior to the deposition of IGZO layer by room-temperature sputtering. The number of particles per unit area (surface density) of the In 2 O 3 nanoparticles could be controlled by applying multiple spin coatings of the nanoparticle suspension. During the deposition of IGZO, the In 2 O 3 nanoparticles initially located on the substrate surface migrated to the top of the IGZO layer indicating that they were not embedded within the IGZO layer, but they supplied In to the IGZO layer to increase the In concentration in the channel layer. As a result, the channel characteristics of the a-IGZO TFT were modulated so that the device showed an enhanced performance as compared with the reference device prepared without the nanoparticle treatment. Such an improved device performance is attributed to the nano-scale changes in the structure of (InO) n ordering assisted by increased In concentration in the amorphous channel layer. (paper)

  6. Thin liquid films dewetting and polymer flow

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  7. Ellipsometry with phase and azimuth modulation: Investigation of the dielectric constant of thin films of Th and Ag deposited onto Au electrodes

    Chao, F; Costa, M

    1981-08-07

    Ellipsometry with phase and azimuth modulation was used to measure the variations with coverage in the dielectric constant epsilonsub(f) = epsilon/sub 1/ - iepsilon/sub 2/ of thin films of thallium and silver deposited onto polycrystalline gold electrodes. In the underpotential deposition (UPD) zone the epsilon/sub 2/ versus theta curves for both systems present maxima at theta approx. equal to 0.5 which are associated with points of inflexion on the epsilon/sub 1/ versus theta curves; these may correspond to a transition between two two-dimensional structures, one of which occurs for theta < 0.5 and the other for theta > 0.5. A change in the direction of the variations in epsilon/sub 1/ versus theta and epsilon/sub 2/ versus theta corresponds to the beginning of nucleation. It takes place at theta approx. equal to 1 for the Tl/sup +/ - Au system and at theta approx. equal to 0.5 for Ag/sup +/ - Au. For silver coverage, the more condensed two-dimensional structure seems to include metallic nuclei. When theta > 1, at the same coverage different values of epsilon/sub 1/ and epsilon/sub 2/ are observed according to the rate of deposition, i.e. according to the size of the crystallites. The limiting values of epsilonsub(f) are in good agreement with the values determined in vacuum and reported in the literature. For wavelengths lambda > 500 nm, the results are interpreted quantitatively through Drude relations assuming that both the surface density N of the free electrons and their relaxation time tau vary with theta. For Tl/sup +/ - Au the variation of N in the UPD zone corresponds to a residual charge q = 0.29 on the thallium adatom (..delta..N = 5.8 x 10/sup 22/ cm/sup -3/ for theta = 1), whereas for Ag/sup +/ - Au the residual charge on the adatom is negligible. For the thallium film the variation in tau implies an increase in the surface diffusivity with theta in the UPD zone and a decrease after the first monolayer. For the silver films the specularity of the

  8. Intrinsically conductive polymer thin film piezoresistors

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  9. Excimer Laser Deposition of PLZT Thin Films

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  10. Thin films of mixed metal compounds

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  11. Field ion microscope studies on thin films

    Cavaleru, A.; Scortaru, A.

    1976-01-01

    A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)

  12. Cellulose triacetate, thin film dielectric capacitor

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  13. Nanostructured thin films and coatings functional properties

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  14. Photovoltaic Manufacturing Cost and Throughput Improvements for Thin Film CIGS-Based Modules: Final Technical Report, July 1998 -- September 2001

    Britt, J.

    2002-04-01

    This report describes the marked improvements made of the production line under the PVMaT program: successfully developed a high-speed, all-laser, monolithic integration process for CIGS-based modules on polyimide substrates; exceeded PVMaT goals for scribing rate and total interconnect width; developed robust, well-controlled techniques for selective scribing; improved CIGS evaporation sources to allow uniform, controllable delivery; completed foundation required to integrate higher CIGS deposition rates into the production line; developed well-controlled Se delivery system to minimize Se consumption; successfully integrated the parallel-detector spectroscope ellipsometer (PDSE) into a production CIGS deposition chamber; collected useful, in-situ data with PDSE; validated the performance of the X-ray fluorescometry (XRF) sensor in the production CIGS deposition chamber; and successfully incorporated the XRF sensor into the control architecture of the production CIGS deposition chamber .

  15. Scale-Up of the Electrodeposition of ZnO/Eosin Y Hybrid Thin Films for the Fabrication of Flexible Dye-Sensitized Solar Cell Modules

    Florian Bittner

    2018-02-01

    Full Text Available The low-temperature fabrication of flexible ZnO photo-anodes for dye-sensitized solar cells (DSSCs by templated electrochemical deposition of films was performed in an enlarged and technical simplified deposition setup to demonstrate the feasibility of the scale-up of the deposition process. After extraction of eosin Y (EY from the initially deposited ZnO/EY hybrid films, mesoporous ZnO films with an area of about 40 cm2 were reproducibly obtained on fluorine doped tin oxide (FTO-glass as well as flexible indium tin oxide (ITO–polyethylenterephthalate (PET substrates. With a film thickness of up to 9 µm and a high specific surface area of up to about 77 m2·cm−3 the ZnO films on the flexible substrates show suitable properties for DSSCs. Operative flexible DSSC modules proved the suitability of the ZnO films for use as DSSC photo-anodes. Under a low light intensity of about 0.007 sun these modules achieved decent performance parameters with conversion efficiencies of up to 2.58%. With rising light intensity the performance parameters deteriorated, leading to conversion efficiencies below 1% at light intensities above 0.5 sun. The poor performance of the modules under high light intensities can be attributed to their high series resistances.

  16. Scale-Up of the Electrodeposition of ZnO/Eosin Y Hybrid Thin Films for the Fabrication of Flexible Dye-Sensitized Solar Cell Modules

    Oekermann, Torsten

    2018-01-01

    The low-temperature fabrication of flexible ZnO photo-anodes for dye-sensitized solar cells (DSSCs) by templated electrochemical deposition of films was performed in an enlarged and technical simplified deposition setup to demonstrate the feasibility of the scale-up of the deposition process. After extraction of eosin Y (EY) from the initially deposited ZnO/EY hybrid films, mesoporous ZnO films with an area of about 40 cm2 were reproducibly obtained on fluorine doped tin oxide (FTO)-glass as well as flexible indium tin oxide (ITO)–polyethylenterephthalate (PET) substrates. With a film thickness of up to 9 µm and a high specific surface area of up to about 77 m2·cm−3 the ZnO films on the flexible substrates show suitable properties for DSSCs. Operative flexible DSSC modules proved the suitability of the ZnO films for use as DSSC photo-anodes. Under a low light intensity of about 0.007 sun these modules achieved decent performance parameters with conversion efficiencies of up to 2.58%. With rising light intensity the performance parameters deteriorated, leading to conversion efficiencies below 1% at light intensities above 0.5 sun. The poor performance of the modules under high light intensities can be attributed to their high series resistances. PMID:29393910

  17. BDS thin film damage competition

    Stolz, Christopher J.; Thomas, Michael D.; Griffin, Andrew J.

    2008-10-01

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  18. Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure

    Chen, X.F. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); He, G., E-mail: hegang@ahu.edu.cn [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); Liu, M., E-mail: mliu@issp.ac.cn [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Zhang, J.W.; Deng, B.; Wang, P.H.; Zhang, M. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); Lv, J.G. [Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061 (China); Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China)

    2014-12-05

    Highlights: • Sputtering-derived a-IGZO thin films were grown on Si and glass substrates in a mixed atmosphere of Ar and O{sub 2}. • XRD measurements have shown that the as-deposited thin films are all amorphous. • Blue shift in band gap and reduction in n with increasing the O{sub 2}/Ar flow ratio have been detected. • Reduction of oxygen vacancies is suggested to be the cause of the band gap and resistivity increase. - Abstract: Sputtering-derived amorphous InGaZnO (a-IGZO) thin films were grown on Si and glass substrates in a mixed ambient of Ar and O{sub 2} at fixed 0.5 Pa working pressure. The influence of O{sub 2}/Ar flow ratio on the optical and electrical properties of a-IGZO thin films has been systematically investigated by means of characterization from spectroscopic ellipsometry (SE), X-ray diffraction (XRD), scan electron microscopy (SEM), atomic force microscope (AFM), UV–vis spectroscopy, and electrical measurements. Results have shown that the band gap of the as-deposited IGZO films increases from 3.45 eV to 3.75 eV as the O{sub 2}/Ar flow ratio increases from 0% to 20%. Blue shift in band gap and reduction in reactive index with increasing the O{sub 2}/Ar flow ratio have been detected. Electrical measurements have indicated the increase in resistivity at higher O{sub 2}/Ar gas flow ratio. Related mechanics about the increase in band gap and resistivity have been discussed in detail.

  19. Photovoltaic manufacturing cost and throughput improvements for thin-film CIGS-based modules: Phase 1 technical report, July 1998--July 1999

    Wiedeman, S.; Wendt, R.G.

    2000-03-01

    The primary objectives of the Global Solar Energy (GSE) Photovoltaic Manufacturing Technology (PVMaT) subcontract are directed toward reducing cost and expanding the production rate of thin-film CuInGaSe{sub 2} (CIGS)-based PV modules on flexible substrates. Improvements will be implemented in monolithic integration, CIGS deposition, contact deposition, and in-situ CIGS control and monitoring. In Phase 1, GSE has successfully attacked many of the highest risk aspects of each task. All-laser, selective scribing processes for CIGS have been developed, and many end-of-contract goals for scribing speed have been exceeded in the first year. High-speed ink-jet deposition of insulating material in the scribes now appears to be a viable technique, again exceeding some end-of-contract goals in the first year. Absorber deposition of CIGS was reduced corresponding to throughput speeds of up to 24-in/min, also exceeding an end-of-contract goal. Alternate back-contact materials have been identified that show potential as candidates for replacement of higher-cost molybdenum, and a novel, real-time monitoring technique (parallel-detector spectroscopic ellipsometry) has shown remarkable sensitivity to relevant properties of the CIGS absorber layer for use as a diagnostic tool. Currently, one of the bilayers has been baselined by GSE for flexible CIGS on polymeric substrates. Resultant back-contacts meet sheet-resistance goals and exhibit much less intrinsic stress than Mo. CIGS has been deposited, and resultant devices are comparable in performance to pure Mo back-contacts. Debris in the chamber has been substantially reduced, allowing longer roll-length between system cleaning.

  20. Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell / low-cost and large-area module / next-generation thin-film solar cell (Manufacture of thin-film polycrystalline solar module); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)

    NONE

    1998-03-01

    Fiscal 1997 is the first year of another 4-year-long research and development phase. In addition to researches for improving on thin-film polycrystalline Si cell efficiency that have been under way, new efforts are started, which include the development of practicality-conscious thin film producing technologies aiming at higher throughput and yield and the development of modularization process technologies which are necessary for putting thin-film cells to practical use. Concerning the formation of a power generation layer on a polycrystalline Si thin film formed by the ZMR (zone-melting recrystallization) process, studies are conducted for improvement on its throughput and yield using a new CVD (chemical vapor deposition) unit. A method of modularization is evaluated, which involves a laminate of a thin-film cell attached to a resin-coated, reinforced glass substrate and an EVA (ethylene vinyl acetate) back film. A remarkable achievement is earned toward the practicalization of technologies of thin film formation enhanced in quality and throughput and technologies of thin film modularization. (NEDO)

  1. Method of producing thin cellulose nitrate film

    Lupica, S.B.

    1975-01-01

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent

  2. Visualizing Nanoscopic Topography and Patterns in Freely Standing Thin Films

    Yilixiati, Subinuer; Zhang, Yiran; Pearsall, Collin; Sharma, Vivek

    Thin liquid films containing micelles, nanoparticles, polyelectrolyte-surfactant complexes and smectic liquid crystals undergo thinning in a discontinuous, step-wise fashion. The discontinuous jumps in thickness are often characterized by quantifying changes in the intensity of reflected monochromatic light, modulated by thin film interference from a region of interest. Stratifying thin films exhibit a mosaic pattern in reflected white light microscopy, attributed to the coexistence of domains with various thicknesses, separated by steps. Using Interferometry Digital Imaging Optical Microscopy (IDIOM) protocols developed in the course of this study, we spatially resolve for the first time, the landscape of stratifying freestanding thin films. In particular, for thin films containing micelles of sodium dodecyl sulfate (SDS), discontinuous, thickness transitions with concentration-dependent steps of 5-25 nm are visualized and analyzed using IDIOM protocols. We distinguish nanoscopic rims, mesas and craters and show that the non-flat features are sculpted by oscillatory, periodic, supramolecular structural forces that arise in confined fluids

  3. Laser-induced vibration of a thin soap film.

    Emile, Olivier; Emile, Janine

    2014-09-21

    We report on the vibration of a thin soap film based on the optical radiation pressure force. The modulated low power laser induces a counter gravity flow in a vertical free-standing draining film. The thickness of the soap film is then higher in the upper region than in the lower region of the film. Moreover, the lifetime of the film is dramatically increased by a factor of 2. Since the laser beam only acts mechanically on the film interfaces, such a film can be employed in an optofluidic diaphragm pump, the interfaces behaving like a vibrating membrane and the liquid in-between being the fluid to be pumped. Such a pump could then be used in delicate micro-equipment, in chips where temperature variations are detrimental and even in biological systems.

  4. Macro stress mapping on thin film buckling

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  5. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  6. Solid thin film materials for use in thin film charge-coupled devices

    Lynch, S.J.

    1983-01-01

    Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

  7. Passivation Effects in Copper Thin Films

    Wiederhirn, G.; Nucci, J.; Richter, G.; Arzt, E.; Balk, T. J.; Dehm, G.

    2006-01-01

    We studied the influence of a 10 nm AlxOy passivation on the stress-temperature behavior of 100 nm and 1 μm thick Cu films. At low temperatures, the passivation induces a large tensile stress increase in the 100 nm film; however, its effect on the 1 μm film is negligible. At high temperatures, the opposite behavior is observed; while the passivation does not change the 100 nm film behavior, it strengthens the 1 μm film by driving it deeper into compression. These observations are explained in light of a combination of constrained diffusional creep and dislocation dynamics unique to ultra-thin films

  8. Thermal conductivity model for nanoporous thin films

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  9. Investigation and optimization of series connection of thin-film silicon solar modules; Untersuchung und Optimierung der Serienverschaltung von Silizium-Duennschicht-Solarmodulen

    Haas, Stefan

    2010-07-01

    The integrated series connection is an important and elementary part of a thin-film silicon solar module. The series connection leads to a reduction of Ohmic losses and an increase of the module voltage. After their deposition the different functional layers of a solar module must be patterned selectively to form a series connection. First the front contact, then the absorber, and finally the back contact is locally removed. The first step and the last step are needed to separate the contact layers (isolation step), the absorber patterning is used to expose the front contact and prepare the series interconnection. Usually laser ablation is used for patterning. The patterning of the front contact is overall a noncritical step. Therefore, this thesis exclusively investigates mechanisms that limit the process window of the absorber patterning and the back contact patterning. Especially for the absorber patterning on SnO{sub 2}-substrates the process window is very narrow. As too high pulse energies create a barrier layer on the SnO{sub 2}-window layer, which restricts the current flow in a series connected module. This barrier layer probably consists of SiO{sub 2} or an alloy of (Sn,Si)O{sub 2}. It arrises from redeposition of evaporated silicon. Ablation of the absorber without creating a barrier layer is only possible, when the silicon is not evaporated. Here the ablation is induced by the explosive out-diffusion of hydrogen from the silicon layer. On ZnO-substrates no significant barrier formation occurs. For this reason the process window is very broad. Patterning the back contact is the last isolation step. It is mainly restricted by an unavoidable deterioration of the absorber as well as a possible ablation of the window layer. The deterioration of the absorber in the vicinity of the patterning groove leads to parasitic dark currents for amorphous and for microcrystalline solar cells. The parasitic dark currents decrease the efficiency {eta} of a patterned

  10. Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer

    Nakayama, Hiroyasu; Ye, Jianting; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Iwasa, Yoshihiro; Saitoh, Eiji

    Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with

  11. Flush Mounting Of Thin-Film Sensors

    Moore, Thomas C., Sr.

    1992-01-01

    Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.

  12. Thin film description by wavelet coefficients statistics

    Boldyš, Jiří; Hrach, R.

    2005-01-01

    Roč. 55, č. 1 (2005), s. 55-64 ISSN 0011-4626 Grant - others:GA UK(CZ) 173/2003 Institutional research plan: CEZ:AV0Z10750506 Keywords : thin films * wavelet transform * descriptors * histogram model Subject RIV: BD - Theory of Information Impact factor: 0.360, year: 2005 http://library.utia.cas.cz/separaty/2009/ZOI/boldys-thin film description by wavelet coefficients statistics .pdf

  13. Thin Films for Advanced Glazing Applications

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  14. Photoluminescence properties of perovskite multilayer thin films

    Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

    2016-07-01

    Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

  15. Nanosphere lithography applied to magnetic thin films

    Gleason, Russell

    Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

  16. Oxygen content modulation by nanoscale chemical and electrical patterning in epitaxial SrCoO3-δ (0 < δ ≤ 0.5) thin films.

    Hu, S; Seidel, J

    2016-08-12

    Fast controllable redox reactions in solid materials at room temperature are a promising strategy for enhancing the overall performance and lifetime of many energy technology materials and devices. Easy control of oxygen content is a key concept for the realisation of fast catalysis and bulk diffusion at room temperature. Here, high quality epitaxial brownmillerite SrCoO2.5 thin films have been oxidised to perovskite (P) SrCoO3 with NaClO. X-ray diffraction, scanning probe microscopy and x-ray photoelectron spectroscopy measurements were performed to investigate the structural and electronic changes of the material. The oxidised thin films were found to exhibit distinct morphological changes from an atomically flat terrace structure to forming small nanosized islands with boundaries preferentially in [100] or [010] directions all over the surface, relaxing the in-plane strain imposed by the substrate. The conductivity, or oxygen content, of each single island is confined by these textures, which can be locally patterned even further with electric poling. The high charging level at the island boundaries indicates a magnified electric capacity of SCO thin films, which could be exploited in future device geometries. This finding represents a new way of oxygen modulation with associated self-assembled charge confinement to nanoscale boundaries, offering interesting prospects in nanotechnology applications.

  17. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system/development of technology to manufacture thin film solar cells/development of technology to manufacture low-cost large-area modules/development of technology to manufacture next generation thin film solar cells (development of technology to manufacture applied type thin film solar cells with new construction); 1997 nendo tiayoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module esizo gijutsu kaihatsu (jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu)

    NONE

    1998-03-01

    A thin film single crystal silicon solar cell module is developed, in which a porous silicon layer is formed on the surface of a long-sized single crystal silicon substrate, a single crystal silicon film is integrated on the layer by epitaxially growing the film thereon to form a solar cell, and the solar cell is peeled off from the silicon substrate and transferred to a plastic film substrate. The achievements during this fiscal year may be summarized as follows: simultaneous formation of a porous silicon layer on a silicon substrate, reduction of anode formation current density from 200 mA/cm{sup 2} to 10 mA/cm{sup 2}, development of a silicon epitaxial device using a carbon heater, and attainment of aperture conversion efficiency of 11.8% in a thin film single crystal silicon solar cell. Three kinds of methods were developed to peel off the solar cell. A method was developed to grind silicon substrate surface from which the solar cell has been peeled off. A technology was developed to obtain a long-sized silicon substrate of about 30 cm times 10 cm times 0.1 cm from a 4-inch silicon ingot by using a wire saw. (NEDO)

  18. Silicon-integrated thin-film structure for electro-optic applications

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  19. Tailoring electronic structure of polyazomethines thin films

    J. Weszka; B. Hajduk; M. Domański; M. Chwastek; J. Jurusik; B. Jarząbek; H. Bednarski; P. Jarka

    2010-01-01

    Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD) can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic ...

  20. Electrochemical fabrication of nanoporous polypyrrole thin films

    Li Mei; Yuan Jinying; Shi Gaoquan

    2008-01-01

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)

  1. Polymer surfaces, interfaces and thin films

    Stamm, M [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  2. Polymer surfaces, interfaces and thin films

    Stamm, M.

    1996-01-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs

  3. Heat shrink formation of a corrugated thin film thermoelectric generator

    Sun, Tianlei; Peavey, Jennifer L.; David Shelby, M.; Ferguson, Scott; O’Connor, Brendan T.

    2015-01-01

    Highlights: • Demonstrate and characterize a thermoelectric generator with a corrugated geometry. • Employ a novel heat shrink fabrication approach compatible with low-cost processing. • Use thermal impedance modeling to explore design potential. • Corrugated design shown to be advantageous for low heat-flux density applications. - Abstract: A thin film thermoelectric (TE) generator with a corrugated architecture is demonstrated formed using a heat-shrink fabrication approach. Fabrication of the corrugated TE structure consists of depositing thin film thermoelectric elements onto a planar non-shrink polyimide substrate that is then sandwiched between two uniaxial stretch-oriented co-polyester (PET) films. The heat shrink PET films are adhered to the polyimide in select locations, such that when the structure is placed in a high temperature environment, the outer films shrink resulting in a corrugated core film and thermoelectric elements spanning between the outer PET films. The module has a cross-plane heat transfer architecture similar to a conventional bulk TE module, but with heat transfer in the plane of the thin film thermoelectric elements, which assists in maintaining a significant temperature difference across the thermoelectric junctions. In this demonstration, Ag and Ni films are used as the thermoelectric elements and a Seebeck coefficient of 14 μV K −1 is measured with a maximum power output of 0.22 nW per couple at a temperature difference of 7.0 K. We then theoretically consider the performance of this device architecture with high performance thermoelectric materials in the heat sink limited regime. The results show that the heat-shrink approach is a simple fabrication method that may be advantageous in large-area, low power density applications. The fabrication method is also compatible with simple geometric modification to achieve various form factors and power densities to customize the TE generator for a range of applications

  4. Simulated Thin-Film Growth and Imaging

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  5. Restructuring in block copolymer thin films

    Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

    2017-01-01

    Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

  6. Nanostructured thin films as functional coatings

    Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

    2010-06-15

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  7. On the modulation of oxygen sensitivity of In{sub 2}O{sub 3} thin films: effects of moisture and dc bias

    Zhu, Yihao; Koley, Goutam [Department of Electrical Engineering, University of South Carolina, Columbia, SC (United States)

    2014-11-15

    Oxygen sensing characteristics of In{sub 2}O{sub 3} thin film at room temperature have been investigated through conductivity measurements using interdigitated metal finger patterned devices. We observed that the O{sub 2} sensitivity gets affected very significantly in presence of moisture, as well as with applied dc bias. The O{sub 2} sensitivity was found to increase several times in moist ambient compared to dry ambient condition. Higher dc bias also dramatically improved the sensitivity, which varied more than two orders of magnitude as the dc bias was increased from 0.5 to 10 V. We propose that the observed increase in sensitivity in presence of moisture is caused by enhanced surface electron density on In{sub 2}O{sub 3} thin film resulting from the donation of electrons caused by the chemisorbed water molecules. The adsorption of O{sub 2} molecules, which subsequently formed O{sub 2}{sup -} ions, leads to chemical gating of the sensor devices, which under larger dc bias produced a higher fractional change in current leading to higher sensitivity. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  9. Soft electronic structure modulation of surface (thin-film) and bulk (ceramics) morphologies of TiO{sub 2}-host by Pb-implantation: XPS-and-DFT characterization

    Zatsepin, D.A. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Boukhvalov, D.W., E-mail: danil@hanyang.ac.kr [Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Yekaterinburg (Russian Federation); Gavrilov, N.V. [Institute of Electrophysics, Russian Academy of Sciences, Ural Branch, 620990 Yekaterinburg (Russian Federation); Zatsepin, A.F. [Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Shur, V.Ya.; Esin, A.A. [Institute of Natural Sciences, Ural Federal University, 51 Lenin Ave, 620000 Yekaterinburg (Russian Federation); Kim, S.S. [School of Materials Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Kurmaev, E.Z. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation)

    2017-04-01

    Highlights: • Experiment and theory demonstrate significant difference between patterns of Pb-ion implantation in TiO{sub 2}. • In bulk TiO{sub 2} Pb-impurities leads formation of PbO phase. • On the surface of TiO{sub 2}:Pb occur formation of PbxOy configurations. • In both bulk and surface TiO{sub 2}:Pb occur decreasing of the bandgap by shift of valence band about 1 eV up. - Abstract: The results of combined experimental and theoretical study of substitutional and clustering effects in the structure of Pb-doped TiO{sub 2}-hosts (bulk ceramics and thin-film morphologies) are presented. Pb-doping of the bulk and thin-film titanium dioxide was made with the help of pulsed ion-implantation without posterior tempering (Electronic Structure Modulation Mode). The X-ray photoelectron spectroscopy (XPS) qualification of core-levels and valence bands and Density-Functional Theory (DFT) calculations were employed in order to study the yielded electronic structure of Pb-ion modulated TiO{sub 2} host-matrices. The combined XPS-and-DFT analysis has agreed definitely with the scenario of the implantation stimulated appearance of PbO-like structures in the bulk morphology of TiO{sub 2}:Pb, whereas in thin-film morphology the PbO{sub 2}-like structure becomes dominating, essentially contributing weak O/Pb bonding (Pb{sub x}O{sub y} defect clusters). The crucial role of the oxygen hollow-type vacancies for the process of Pb-impurity “insertion” into the structure of bulk TiO{sub 2} was pointed out employing DFT-based theoretical background. Both experiment and theory established clearly the final electronic structure re-arrangement of the bulk and thin-film morphologies of TiO{sub 2} because of the Pb-modulated deformation and shift of the initial Valence Base-Band Width about 1 eV up.

  10. Microscopic local fatigue in PZT thin films

    Li, B S; Wu, A; Vilarinho, P M

    2007-01-01

    The reduction in switchable polarization during fatigue largely limits the application of PZT thin films in ferroelectric nonvolatile memories. So, it is very important to understand the fatigue mechanism in PZT films, especially at a nanoscale level. In this paper, nanoscale fatigue properties in PZT thin films have been studied by piezoresponse force microscopy and local piezoloops. It has been found that a piezoloop obtained on a fatigued point exhibits a much more pinched shape and a local imprint phenomenon is observed after severe fatigue. Furthermore, the domain structure evolves from a simple single-peak profile to a complex fluctuant one. However, there is only some shift of the piezoloop when a unipolar field with the same amplitude is applied on the film. The available experimental data show that there exist obvious domain wall pinning and injection of electrons into the film during fatigue. Finally, a schematic illustration is suggested to explain the possible fatigue mechanism

  11. Optical constant of thin gold films

    Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

    2017-01-01

    The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... of the device. At the same time, metal films of different thicknesses are needed for different applications and, since these films are polycrystalline, their internal properties and surface roughness can greatly vary from one thickness to another. In this work, we study, using atomic force microscopy...

  12. Thermal conductivity of nanoscale thin nickel films

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  13. Magnetostrictive thin films prepared by RF sputtering

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  14. Critical behavior of ferromagnetic Ising thin films

    Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

  15. Development of process technology for large-area thin-film solar modules based on compound semiconductors. Final report; Entwicklung der technologischen Grundlagen fuer grosse Photovoltaikmodule auf Basis von Duennschicht-Verbindungshalbleitern. Abschlussbericht

    Maurus, H.; Lechner, P.; Geyer, R.; Ruebel, H.; Schade, H.; Psyk, W.; Frammelsberger, W.; Berthold, W.; Eichner, C.; Heckel, E.; Huber, R.; Labudde-Eibl, H.; Raith, S.; Schenk, B.; Ullrich, H.

    1998-06-01

    A cooperative effort of the Center for Solar Energy and Hydrogen Research (ZSW) and Phototronics Solartechnik GmbH (PST) aimed at the transfer of highly efficient solar cells developed on a laboratory scale, to large-area thin-film solar modules suitable for production. This work was based on research and development at the Institute for Physical Electronics (IPE) of Stuttgart University and ZSW on one hand, and on the know-how of PST in regard to large-area module fabrication on the other hand. The various thin-film layers of the cells and modules comprize molybdenum as rear contact, copper-indium(gallium)-diselenide (CIGS) as absorber material, the combination of cadmium sulphide (CdS) and ZnO as window layer. To produce these layers on large areas (30x30 cm{sup 2}), equipment was constructed and procedures were developed. Monolithic series connection of cells, used in other thin-film technologies, was studied and optimized by suitable patterning procedures, such as laser-scribing, mechanical scribing or lift-off techniques. Central to the PST efforts was the large-area deposition of Mo followed by patterning for the monolithic series connection, and furthermore important contributions in regard to the ZnO window layer as well as aspects of the module technology. The latter include film removal along the module edges, contacting and cable attachment, lamination, module measurements and temperature/humidity tests. The main goal, namely the basic development of equipment and procedures to fabricate large-area (30x30 cm{sup 2}) modules with an efficiency of 10-12%, was reached (best module with 11.7% efficiency referenced to the aperature area). (orig.) [Deutsch] Um die im Labormassstab entwickelten hocheffizienten Solarzellen in industriell relevante grossflaechige Duennschichtmodule umzusetzen, arbeiteten das Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Wuerttemberg und die Phototronics Solartechnik GmbH (PST) zusammen. Ausgangsbasis waren

  16. Laser Welding of Silicon Foils for Thin-Film Solar Cell Manufacturing

    Heßmann, Maik

    2014-01-01

    Thin-film solar module manufacturing is one of the most promising recent developments in photovoltaic research and has the potential to reduce production costs. As the necessity for competitive prices on the world market increases and manufacturers endeavor to bring down the cost of solar modules, thin-film technology is becoming more and more attractive. In this work a special technique was investigated which makes solar cell manufacturing more compatible with an industrial roll-to-roll proc...

  17. Lithium ion intercalation into thin film anatase

    Kundrata, I.; Froehlich, K.; Ballo, P.

    2015-01-01

    The aim of this work is to find the optimal parameters for thin film TiO 2 anatase grown by Atomic layer deposition (ALD) for use as electrode in lithium ion batteries. Two parameters, the optimal film thickness and growth conditions are aimed for. Optimal film thickness for achieving optimum between capacity gained from volume and capacity gained by changing of the intercalation constant and optimal growth conditions for film conformity on structured substrates with high aspect ratio. Here we presents first results from this ongoing research and discuss future outlooks. (authors)

  18. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  19. Conductance Thin Film Model of Flexible Organic Thin Film Device using COMSOL Multiphysics

    Carradero-Santiago, Carolyn; Vedrine-Pauléus, Josee

    We developed a virtual model to analyze the electrical conductivity of multilayered thin films placed above a graphene conducting and flexible polyethylene terephthalate (PET) substrate. The organic layers of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a hole conducting layer, poly(3-hexylthiophene-2,5-diyl) (P3HT), as a p-type, phenyl-C61-butyric acid methyl ester (PCBM) and as n-type, with aluminum as a top conductor. COMSOL Multiphysics was the software we used to develop the virtual model to analyze potential variations and conductivity through the thin-film layers. COMSOL Multiphysics software allows simulation and modeling of physical phenomena represented by differential equations such as heat transfer, fluid flow, electromagnetism, and structural mechanics. In this work, using the AC/DC, electric currents module we defined the geometry of the model and properties for each of the six layers: PET/graphene/PEDOT:PSS/P3HT/PCBM/aluminum. We analyzed the model with varying thicknesses of graphene and active layers (P3HT/PCBM). This simulation allowed us to analyze the electrical conductivity, and visualize the model with varying voltage potential, or bias across the plates, useful for applications in solar cell devices.

  20. Targeted Functionalization of Nanoparticle Thin Films via Capillary Condensation

    Gemici, Zekeriyya; Schwachulla, Patrick I.; Williamson, Erik H.; Rubner, Michael F.; Cohen, Robert E.

    2009-01-01

    Capillary condensation, an often undesired natural phenomenon in nanoporous materials, was used advantageously as a universal functionalization strategy in nanoparticle thin films assembled layer-by-layer. Judicious choice of nanoparticle (and therefore pore) size allowed targeted capillary condensation of chemical vapors of both hydrophilic and hydrophobic molecules across film thickness. Heterostructured thin films with modulated refractive index profiles produced in this manner exhibited broadband antireflection properties with an average reflectance over the visible region of the spectrum of only 0.4%. Capillary condensation was also used to modify surface chemistry and surface energy. Photosensitive capillary-condensates were UV-cross-linked in situ. Undesired adventitious condensation of humidity could be avoided by condensation of hydrophobic materials such as poly(dimethyl siloxane). © 2009 American Chemical Society.

  1. Targeted Functionalization of Nanoparticle Thin Films via Capillary Condensation

    Gemici, Zekeriyya

    2009-03-11

    Capillary condensation, an often undesired natural phenomenon in nanoporous materials, was used advantageously as a universal functionalization strategy in nanoparticle thin films assembled layer-by-layer. Judicious choice of nanoparticle (and therefore pore) size allowed targeted capillary condensation of chemical vapors of both hydrophilic and hydrophobic molecules across film thickness. Heterostructured thin films with modulated refractive index profiles produced in this manner exhibited broadband antireflection properties with an average reflectance over the visible region of the spectrum of only 0.4%. Capillary condensation was also used to modify surface chemistry and surface energy. Photosensitive capillary-condensates were UV-cross-linked in situ. Undesired adventitious condensation of humidity could be avoided by condensation of hydrophobic materials such as poly(dimethyl siloxane). © 2009 American Chemical Society.

  2. Targeted functionalization of nanoparticle thin films via capillary condensation.

    Gemici, Zekeriyya; Schwachulla, Patrick I; Williamson, Erik H; Rubner, Michael F; Cohen, Robert E

    2009-03-01

    Capillary condensation, an often undesired natural phenomenon in nanoporous materials, was used advantageously as a universal functionalization strategy in nanoparticle thin films assembled layer-by-layer. Judicious choice of nanoparticle (and therefore pore) size allowed targeted capillary condensation of chemical vapors of both hydrophilic and hydrophobic molecules across film thickness. Heterostructured thin films with modulated refractive index profiles produced in this manner exhibited broadband antireflection properties with an average reflectance over the visible region of the spectrum of only 0.4%. Capillary condensation was also used to modify surface chemistry and surface energy. Photosensitive capillary-condensates were UV-cross-linked in situ. Undesired adventitious condensation of humidity could be avoided by condensation of hydrophobic materials such as poly(dimethyl siloxane).

  3. Knife-edge thin film field emission cathodes

    Lee, B.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Cathodes made of thin-film field emission arrays (FEA) have the advantages of high current density, pulsed emission, and low bias voltage operation. The authors have developed a technology to fabricate knife-edge field emission cathodes on (110) silicon wafers. The emitter geometry is optimized for efficient modulation at high frequency. Cathode fabrication progress and preliminary analysis of their applications in RF power sources are presented

  4. Organic thin films and surfaces directions for the nineties

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  5. Magnetic characterisation of longitudinal thin film media

    Dova, P.

    1998-09-01

    Magnetic characterisation techniques, as applied to longitudinal thin film media, have been investigated. These included the study of the differentials of the remanence curves, the delta-M plot and the examination of the critical volumes. Several thin film structures, which are currently used or are being considered for future media applications, have been examined using these techniques. Most of the films were Co-alloys with the exception of a set of Barium ferrite films. Both monolayer and multilayer structures were studied. It was found that the study of activation volumes provides a better insight into the reversal mechanisms of magnetic media, especially in the case of complex structures such as multilayer films and films with bicrystal microstructure. Furthermore, an evaluation study of different methods of determining critical volumes showed that the method using time dependence measurements and the micromagnetic approach is the most appropriate. The magnetic characteristics of the thin film media under investigation were correlated with their microstructure and, where possible, with their noise performance. Magnetic force microscopy was also used for acquiring quasi-domain images in the ac-demagnetised state. It was found that in all Co-alloy films the dominant intergranular coupling is magnetising in nature, the level of which is governed by the Cr content in the magnetic layer. In the case of laminated media it was found that when non-magnetic spacers are used, the nature of the interlayer coupling depends on the spacer thickness. In double layer structures with no spacer, the top layer replicates the crystallographic texture of the bottom layer, and the overall film properties are a combination of the two layers. In bicrystal films the coupling is determined by the Cr segregation in the grain boundaries. Furthermore, the presence of stacking faults in bicrystal films deteriorates their thermal stability, but can be prevented by improving the epitaxial

  6. Vibration welding system with thin film sensor

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  7. Solid surfaces, interfaces and thin films

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  8. Thin films for the manipulation of light

    Piegari, Angela; Sytchkova, Anna

    2015-01-01

    The manipulation of light is typically accomplished by a series of optical surfaces on which the incident beam is reflected, or through which the beam is transmitted. Thin film coatings help to modify the behavior of such surfaces for obtaining the desired result: antireflection coatings to reduce reflection losses, high-reflectance mirrors, filters to divide or combine beams of different wavelengths, and many other types. The amount of light that is transmitted or reflected depends on the optical parameters of the materials and on interference phenomena in thin-film structures. Dedicated software is available to design the proper coating for each requirement. There are several applications of optical thin films, many of them are useful in the everyday life, many others are dedicated to scientific purposes, as will be described in this paper [it

  9. Thin Film Photovoltaic/Thermal Solar Panels

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  10. Nanostructured thin films and coatings mechanical properties

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  11. Solid Surfaces, Interfaces and Thin Films

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  12. Domains in Ferroic Crystals and Thin Films

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  13. Harnessing the Sun with Thin Film Photovoltaics: Preprint

    Birkmire, R. W.; Kazmerski, L. L.

    1999-01-01

    Photovoltaic (PV) technologies have a substantial role in meeting electric power needs in the next century, especially with an expected competitive position compared to conventional power-generation and other renewable- energy technologies. Thin-film photovoltaic modules based on CdTe, CuInSe2 or Si can potentially be produced by economical, high-volume manufacturing techniques, dramatically reducing component cost. However, the translation of laboratory thin-film technologies to first-time, large-scale manufacturing has been much more difficult than expected. This is due to the complexity of the processes involved for making large-area PV modules at high rates and with high yields, and compounded by the lack of a fundamental scientific and engineering base required to properly engineer and operate manufacturing equipment. In this paper, we discuss the need to develop diagnostics tools and associated predictive models that quantitatively assess processing conditions and pro duct properties. Incorporation of the diagnostic sensors into both laboratory reactors and manufacturing facilities will (1) underpin the development of solar cells with improved efficiency, and (2) accelerate the scale-up process through intelligent process-control schemes. ''Next-generation'' high-performance (e.g., and gt;25% conversion efficiency) thin-film PV modules will also be assessed, along with critical issues associated with their development

  14. Molecular dynamics simulation of Cu/Au thin films under temperature gradient

    Li, Qibin; Peng, Xianghe; Peng, Tiefeng; Tang, Qizhong; Zhang, Xiaomin; Huang, Cheng

    2015-01-01

    Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.

  15. Molecular dynamics simulation of Cu/Au thin films under temperature gradient

    Li, Qibin, E-mail: qibinli@cqu.edu.cn [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Peng, Xianghe [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Peng, Tiefeng, E-mail: pengtiefeng@cqu.edu.cn [State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Tang, Qizhong [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Zhang, Xiaomin [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Huang, Cheng [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China)

    2015-12-01

    Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.

  16. Thin film oxygen partial pressure sensor

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  17. Magnetite thin films: A simulational approach

    Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent ν=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed

  18. Feasibility Study of Thin Film Thermocouple Piles

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  19. Structural characterization of the nickel thin film deposited by glad technique

    Potočnik J.

    2013-01-01

    Full Text Available In this work, a columnar structure of nickel thin film has been obtained using an advanced deposition technique known as Glancing Angle Deposition. Nickel thin film was deposited on glass sample at the constant emission current of 100 mA. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The obtained nickel thin film was characterized by Force Modulation Atomic Force Microscopy and by Scanning Electron Microscopy. Analysis indicated that the formation of the columnar structure occurred at the film thickness of 1 μm, which was achieved for the deposition time of 3 hours. [Projekat Ministarstva nauke Republike Srbije, br. III45005

  20. Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3 thin films via field-assisted oxygen vacancy modulation

    Wong, Hon Fai; Ng, Sheung Mei; Cheng, Wang Fai; Liu, Yukuai; Chen, Xinxin; von Nordheim, Danny; Mak, Chee Leung; Dai, Jiyan; Ploss, Bernd; Leung, Chi Wah

    2017-12-01

    We investigated the tunability of the transport and magnetic properties in 7.5 nm La0.7Sr0.3MnO3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P(VDF-TrFE) as the gate insulator. Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TC of the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TC by more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

  1. Novel chemical analysis for thin films

    Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji

    1991-01-01

    Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)

  2. Perovskite Thin Films via Atomic Layer Deposition

    Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

    2014-01-01

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  3. Perovskite Thin Films via Atomic Layer Deposition

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  4. Mechanical integrity of thin films

    Hoffman, R.W.

    1979-01-01

    Mechanical considerations starting with the initial film deposition including questions of adhesion and grading the interface are reviewed. Growth stresses, limiting thickness, stress relief, control aging, and creep are described

  5. Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

    Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

    2014-12-01

    A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

  6. Mesoscale simulations of confined Nafion thin films

    Vanya, P.; Sharman, J.; Elliott, J. A.

    2017-12-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  7. Processing of thin SU-8 films

    Keller, Stephan; Blagoi, Gabriela; Lillemose, Michael; Haefliger, Daniel; Boisen, Anja

    2008-01-01

    This paper summarizes the results of the process optimization for SU-8 films with thicknesses ≤5 µm. The influence of soft-bake conditions, exposure dose and post-exposure-bake parameters on residual film stress, structural stability and lithographic resolution was investigated. Conventionally, the SU-8 is soft-baked after spin coating to remove the solvent. After the exposure, a post-exposure bake at a high temperature T PEB ≥ 90 °C is required to cross-link the resist. However, for thin SU-8 films this often results in cracking or delamination due to residual film stress. The approach of the process optimization is to keep a considerable amount of the solvent in the SU-8 before exposure to facilitate photo-acid diffusion and to increase the mobility of the monomers. The experiments demonstrate that a replacement of the soft-bake by a short solvent evaporation time at ambient temperature allows cross-linking of the thin SU-8 films even at a low T PEB = 50 °C. Fourier-transform infrared spectroscopy is used to confirm the increased cross-linking density. The low thermal stress due to the reduced T PEB and the improved structural stability result in crack-free structures and solve the issue of delamination. The knowledge of the influence of different processing parameters on the responses allows the design of optimized processes for thin SU-8 films depending on the specific application

  8. Thin films prepared from tungstate glass matrix

    Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

    2008-01-30

    Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.

  9. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Volume 1. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture low-cost large-area modules and survey and research on analyzing how to put products into practical use); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu 1))

    NONE

    2000-03-01

    With an objective to assist research and development to put thin film solar cells for power use into practical use and a research to put thin film solar cell manufacturing technologies into practical use, survey and research have been performed on trends in the technologies inside and outside the country. Characteristic points in thin film solar cells during the current fiscal year include: expansion of production scale of amorphous silicon solar cells, rapid progress in poly-crystalline silicon thin film solar cell technologies, and enhancement of performance in large-area modules in the a-Si, CIGS, and CdTe systems. In the trends in research and development of amorphous systems, expectation is heightening on elucidation of optical deterioration phenomena, and establishment of suppression technologies thereof. Although the highest efficiency was not renewed in thin film solar cells of small areas, progress was seen in the post-stabilization efficiency in large-area modules. A thin film solar cell manufacturing plant having an annual production capacity of 20 MW was put into operation in October in Japan. Micro (poly) crystalline silicon based solar cells have high possibility of being compatible in cost reduction and performance improvement, and energetic researches are being carried out on them in recent years as the most promising candidate of the next generation solar cells. (NEDO)

  10. Atomic Structure Control of Silica Thin Films on Pt(111)

    Crampton, Andrew S; Ridge, Claron J.; Rö tzer, Marian David; Zwaschka, Gregor; Braun, Thomas; D'Elia, Valerio; Basset, Jean-Marie; Schweinberger, Florian Frank; Gü nther, Sebastian; Heiz, Ueli

    2015-01-01

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly

  11. XPS-and-DFT analyses of the Pb 4f — Zn 3s and Pb 5d — O 2s overlapped ambiguity contributions to the final electronic structure of bulk and thin-film Pb-modulated zincite

    Zatsepin, D.A. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Boukhvalov, D.W., E-mail: danil@hanyang.ac.kr [Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Theoretical Physics and Applied Mathematics Department, Ural Federal University,Mira Street 19, 620002 Yekaterinburg (Russian Federation); Gavrilov, N.V. [Institute of Electrophysics, Russian Academy of Sciences, Ural Branch, 620990 Yekaterinburg (Russian Federation); Kurmaev, E.Z. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Zatsepin, A.F. [Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Cui, L. [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Shur, V. Ya.; Esin, A.A. [Institute of Natural Sciences, Ural Federal University, 51 Lenin Ave, 620000 Yekaterinburg (Russian Federation)

    2017-05-31

    Highlights: • Two modes of ZnO:Pb in the bulk and surface morphologies were established: the high- and low-interaction. • It was shown the ambiguity contribution of Pb 4f − Zn 3s and Pb 5d − O 2s states into final electronic structure. • The main type of defects is PbO-like with some PbO{sub 2}-like contributions. • An applied wurzite-like structural model well agrees with experimental data obtained for zincite. - Abstract: The electronic structures of zincite Pb-modulated bulk and thin-films were studied via X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) techniques. Both XPS data and DFT-calculations allowed the derivation of two different Pb-embedding scenarios into the ZnO-hosts. These included the high-interaction mode of Pb-impurity with initial zinc-oxygen host-lattice for the bulk morphology, accompanied with low Pb-metal losses; and the low-interaction mode for thin-films, where there was intake of Pb-impurities into the hollows of the surface. Despite dissimilar mechanisms of Pb-impurity accumulation and distribution in the bulk and thin-films zincite host-matrices, the strong Pb 4f — Zn 3s and Pb 5d — O 2s overlapped ambiguity contribution to the appropriate core-level structure and valence bands was established by XPS analysis and reproduced with the help of DFT-calculations. It was shown that the microscopic structure of the embedded lead-impurity played a crucial role in the Pb ion-beam stimulated synthesis of secondary lead-oxygen phases via large-area defect fabrication, and the difference among zincite and wurzite polymorphs played almost no role in this case.

  12. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for production of thin-film solar cells and low-cost, large-area modules (Development of technologies for high-reliability CdTe solar cell modules); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    NONE

    2000-03-01

    The research and development project is implemented for production of low-cost, large-area modules of CdTe solar cells by the high-quality film-making process and high-function patterning, and the FY 1999 results are reported. The research program for the large-area TCO film-making technologies involves investigations on improvement of SnO{sub 2} film quality by the mist method and continuous film-making, which lead to continuous, stable production of 34 substrates of low resistance of 9.7{omega} on the average. The program for production of the large-area, thin-film CdS/CdTe solar cells involves production of TCO and CdS by the mist method, and patterning of the laminated TCO/CdS film by laser scribing. The CdTe film is formed by the atmospheric pressure CSS method, and treated with CdCl{sub 2} to improve its crystallinity. The CdTe film is patterned by sand blasting, and provided with the carbon and silver electrodes by screen printing, to complete the cell. The process is totally effected at the atmospheric pressure, needing no vacuum device. The CdTe solar cell assembly (130 cells connected in series, opening area: 5,413cm{sup 2}), fabricated on a trial basis, achieves a conversion efficiency of 10%. (NEDO)

  13. Optical characterization of niobium pentoxide thin films

    Pawlicka, A.

    1996-01-01

    Thin films of Nb 2 O 5 were obtained by sol-gel method using ultrasonic irradiation and deposited by dip-coating technique. After calcination at temperatures superior than 500 deg C these films (300 nm thick) were characterized by cyclic voltametry and cronoamperometry. The memory measurements, color efficiency, optical density as a function of wave number and applied potential were effectuated to determine their electrochromic properties. The study of electrochromic properties of these films shows that the insertion process of lithium is reversible and changes their coloration from transparent (T=80%) to dark blue (T=20%). (author)

  14. Electrical resistivity of ferrimagnetic magnetite thin film

    Varshney, Dinesh; Yogi, A.; Kaurav, N.; Gupta, R.P.; Phase, D.M.

    2006-01-01

    We have grown Fe 3 O 4 (III) epitaxial film on Al 2 O 3 (0001) substrate by pulsed laser deposition, with thickness of 130 nm. X-ray diffraction studies of magnetite show the spinel cubic structure of film with preferential (III) orientation. The electrical resistivity measurement demonstrates that the properties of thin film of magnetite are basically similar to those of bulk magnetite and clearly shows semiconductor-insulator transition at Verwey transition temperature (≅140 K). We have found higher Verwey transition temperature when compared with earlier reports on similar type of system. Possible causes for increase in transition temperature are discussed. (author)

  15. Surface Plasmon Waves on Thin Metal Films.

    Craig, Alan Ellsworth

    Surface-plasmon polaritons propagating on thin metal films bounded by dielectrics of nearly equal refractive indexes comprise two bound modes. Calculations indicate that, while the modes are degenerate on thick films, both the real and the imaginary components of the propagation constants for the modes split into two branches on successively thinner films. Considering these non-degenerate modes, the mode exhibiting a symmetric (antisymmetric) transverse profile of the longitudinally polarized electric field component, has propagation constant components both of which increase (decrease) with decreasing film thickness. Theoretical propagation constant eigenvalue (PCE) curves have been plotted which delineate this dependence of both propagation constant components on film thickness. By means of a retroreflecting, hemispherical glass coupler in an attenuated total reflection (ATR) configuration, light of wavelength 632.8 nm coupled to the modes of thin silver films deposited on polished glass substrates. Lorentzian lineshape dips in the plots of reflectance vs. angle of incidence indicate the presence of the plasmon modes. The real and imaginary components of the propagation constraints (i.e., the propagation constant and loss coefficient) were calculated from the angular positions and widths of the ATR resonances recorded. Films of several thicknesses were probed. Results which support the theoretically predicted curves were reported.

  16. New techniques for producing thin boron films

    Thomas, G.E.

    1988-01-01

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  17. Intelligent Processing of Ferroelectric Thin Films

    1994-05-31

    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  18. Tailored piezoelectric thin films for energy harvester

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and

  19. Amperometric Noise at Thin Film Band Electrodes

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael

    2012-01-01

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...

  20. Stabilized thin film heterostructure for electrochemical applications

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  1. Reliability growth of thin film resistors contact

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  2. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager

    2015-01-01

    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

  3. Flexible thin-film NFC tags

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.

    2015-01-01

    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance

  4. Magnetic surfaces, thin films, and multilayers

    Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

    1992-01-01

    This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

  5. Electrical characterization of thin film ferroelectric capacitors

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  6. Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture thin film solar cells, development of technologies to manufacture low-cost large-area modules, development of technologies to manufacture next-generation thin film solar cells (development of technologies to manufacture CIS solar cell modules); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (CIS taiyo denchi module no seizo gijutsu kaihatsu)

    NONE

    1998-03-01

    Research and development was made with an objective to achieve conversion efficiency of 13% in a 30 cm times 30 cm size submodule of a CIS-based thin film solar cell, and to develop a manufacturing technology that can achieve 140 yen/Wp. This paper describes the achievements attained during fiscal 1997. In fiscal 1997, based on the achievements reached during the previous year, a submodule with a size of 10 cm times 30 cm was fabricated for an attempt of improving the open voltage and short circuit current density. Simultaneously, the applicability thereof to a module with an area as large as 30 cm times 30 cm was evaluated. As a result of experimental discussions, enhancement in the open voltage was verified by increasing amount of Ga or sulfur, but it was not possible to achieve 600 mV or higher. In the research of component technologies to establish a mass production process, research and development was made on a high-resistance buffer layer film forming technology, a high-quality window layer film forming technology, a high-quality metallic rear electrode film forming technology, and patterning technologies. The outdoor exposure test was continued on laminated mini-modules with a size of 10 cm times 10 cm. (NEDO)

  7. Internal stress control of boron thin film

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M.

    1998-01-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s -1 and substrate temperature of 300 C. (orig.)

  8. Correlated dewetting patterns in thin polystyrene films

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  9. Correlated dewetting patterns in thin polystyrene films

    Neto, Chiara; Jacobs, Karin; Seemann, Ralf; Blossey, Ralf; Becker, Juergen; Gruen, Guenther

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes

  10. Rim instability of bursting thin smectic films

    Trittel, Torsten; John, Thomas; Tsuji, Kinko; Stannarius, Ralf

    2013-05-01

    The rupture of thin smectic bubbles is studied by means of high speed video imaging. Bubbles of centimeter diameter and film thicknesses in the nanometer range are pierced, and the instabilities of the moving rim around the opening hole are described. Scaling laws describe the relation between film thickness and features of the filamentation process of the rim. A flapping motion of the retracting smectic film is assumed as the origin of the observed filamentation instability. A comparison with similar phenomena in soap bubbles is made. The present experiments extend studies on soap films [H. Lhuissier and E. Villermaux, Phys. Rev. Lett. 103, 054501 (2009), 10.1103/PhysRevLett.103.054501] to much thinner, uniform films of thermotropic liquid crystals.

  11. Internal stress control of boron thin film

    Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M. [Osaka Univ., Suita (Japan). Graduate Sch. of Eng.

    1998-09-01

    The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s{sup -1} and substrate temperature of 300 C. (orig.) 12 refs.

  12. Dielectric loss of strontium titanate thin films

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  13. Thin film preparation of semiconducting iron pyrite

    Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

    1990-08-01

    Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.

  14. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  15. Electrochemical fabrication of nanoporous polypyrrole thin films

    Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

    2008-04-30

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)

  16. Dynamics in thin folded polymer films

    Croll, Andrew; Rozairo, Damith

    Origami and Kirigami inspired structures depend on a complex interplay between geometry and material properties. While clearly important to the overall function, very little attention has focused on how extreme curvatures and singularities in real materials influence the overall dynamic behaviour of folded structures. In this work we use a set of three polymer thin films in order to closely examine the interaction of material and geometry. Specifically, we use polydimethylsiloxane (PDMS), polystyrene (PS) and polycarbonate (PC) thin films which we subject to loading in several model geometries of varying complexity. Depending on the material, vastly different responses are noted in our experiments; D-cones can annihilate, cut or lead to a crumpling cascade when pushed through a film. Remarkably, order can be generated with additional perturbation. Finally, the role of adhesion in complex folded structures can be addressed. AFOSR under the Young Investigator Program (FA9550-15-1-0168).

  17. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, next generation thin film solar cell module manufacturing technologies, development of CIS solar cell module manufacturing technologies); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jisedai usumaku taiyo denchi no seizo gijutsu kaihtsu (CIS taiyo denchi module no seizo gijutsu kaihatsu))

    NONE

    2000-03-01

    Research and development has been performed on a technology to manufacture CIS-based thin film solar cells. This paper summarizes the achievements in fiscal 1999. In the research of a large-area light absorbing layer manufacturing technology, investigation was made on light absorbing layers in manufacturing sub-modules with a size of 30 cm times 30 cm. With regard to the temperature condition in the light absorbing layer forming process, it was found that the cooling rate affects particularly the adhesion in the connecting interface of the light absorbing layer and the Mo rear electrode layer. In addition, it was revealed that the sulfur take-in amount can be increases by extending the retention time at the sulfurizing temperature and by decreasing the temperature to turn the gas phase into selenium. In the research of elementary technologies to establish the mass production process, developments were performed on the high-resistance buffer layer manufacturing technology, the high-quality window layer film manufacturing technology, and the technology to manufacture rear electrode layer made of high-quality metals. In developing the patterning technology, two kinds of the existing patterning devices were modified and adjusted for patterning the substrates with a size of 30 cm times 30 cm. In addition, a processing device was installed in the conventional manually operated process for module finishing. (NEDO)

  18. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  19. Monolayers and thin films of dextran hydrophobically modified

    Leiva, Angel; Munoz, Natalia; Gargallo, Ligia; Radic, Deodato; Urzua, Marcela

    2010-01-01

    A series of biodegradable graft copolymers were synthesized by grafting e-caprolactone over dextran of different molecular weights. The obtained copolymers were characterized by Fourier transform infrared spectroscopy FTIR, proton nuclear magnetic resonance 1H NMR, thermogravimetry and elemental analysis. Stable monolayers at the air-water interface and spin coated thin films were prepared and characterized by the Langmuir technique and by contact angle measurements respectively. The compressibility and static surface elasticity of the monolayers and the surface energy of copolymer thin films show dependence with the e-caprolactone content. >From these results it can be concluded that the surface properties of grafted copolymers can be modulated by their composition. Additionally, according to the obtained results, e-caprolactone grafted-dextrans show potential for being used in different applications where surface properties are important. (author)

  20. Plasmonic versus dielectric enhancement in thin-film solar cells

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole

    2012-01-01

    to its metallic counterpart. We show that the enhanced normalized short-circuit current for a cell with silicon strips can be increased 4 times compared to the best performance for strips of silver, gold, or aluminium. For this particular case, the simple dielectric grating may outperform its plasmonic......Several studies have indicated that broadband absorption of thin-film solar cells can be enhanced by use of surface-plasmon induced resonances of metallic parts like strips or particles. The metallic parts may create localized modes or scatter incoming light to increase absorption in thin......-film semiconducting material. For a particular case, we show that coupling to the same type of localized slab-waveguide modes can be obtained by a surface modulation consisting of purely dielectric strips. The purely dielectric device turns out to have a significantly higher broadband enhancement factor compared...

  1. Magnon dispersion in thin magnetic films

    Balashov, T; Wulfhekel, W; Buczek, P; Sandratskii, L; Ernst, A

    2014-01-01

    Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu 3 Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations. (paper)

  2. Magnon dispersion in thin magnetic films.

    Balashov, T; Buczek, P; Sandratskii, L; Ernst, A; Wulfhekel, W

    2014-10-01

    Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu3Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations.

  3. Function and application of ultra thin films

    Sasabe, Hiroyuki

    1988-02-01

    A film 10-100mm thick which is strong dynamically to some extent and has possibility to manifest fuctions of high degree different from the nature extrapolated from the normal thin film is called an ultra thin film. As an example of its concrete application, there is an electro-luminescence element which is made by laminating 5 layers of LB films of poly-L-phenylalanine on a n-GaP and has vapor-deposited gold electrodes. When voltage of 5V is imposed to it, light emission of 565nm can be observed and the emission efficiency of 2% is obtained. Besides, it has an excellent stability through the lapse of time. There is also a junction element and the ion concentration injected into macromolecule films of this element has a Gaussian distribution from the surface towards the direction of depth. Accordingly, the most active domain in terms of semiconductor as the result of doping is the location in the neighborhood of the peak. Furthermore, a photo memory is also proposed. It is applied to the artificial hemoglobine which is made of LB films, suggesting the feasibility of creating the artificial protein capable of functioning in the conditions in which the natural protein is unable to function. (5 figs, 1 tab, 7 refs)

  4. Thin film diamond microstructure applications

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  5. Thin transparent film characterization by photothermal reflectance (abstract)

    Li Voti, R.; Wright, O. B.; Matsuda, O.; Larciprete, M. C.; Sibilia, C.; Bertolotti, M.

    2003-01-01

    Photothermal reflectance methods have been intensively applied to the nondestructive testing of opaque thin films [D. P. Almond and P. M. Patel, Photothermal Science and Techniques (Chapman and Hall, London, 1996); C. Bento and D. P. Almond, Meas. Sci. Technol. 6, 1022 (1995); J. Opsal, A. Rosencwaig, and D. Willenborg, Appl. Opt. 22, 3169 (1983)]. The basic principle is based on thermal wave interferometry: the opaque specimen is illuminated by a laser beam, periodically chopped at the frequency f, so as to generate a plane thermal wave in the surface region. This wave propagates in the film, approaches the rear interface (film-bulk), is partially reflected back, reaches the front surface, is again partially reflected back and so on, giving rise to thermal wave interference. A consequence of this interference is that the surface temperature may be enhanced (constructive interference) or reduced (destructive interference) by simply scanning the frequency f (that is, the thermal diffusion length μ=√D/πf ), so as to observe damped oscillations as a function of f; in practice only the first oscillation may be clearly resolved and used to measure either the film thickness d or the film thermal diffusivity D, and this situation occurs when μ≈d. In general, photothermal reflectance does not measure directly the surface temperature variation, but rather a directly related signal determined by the thermo-optic coefficients and the sample geometry; for detection it is common to monitor the optical reflectivity variation of a probe beam normally incident on the sample. If the thin film is partially transparent to the probe, the theory becomes more difficult [O. Matsuda and O. B. Wright, J. Opt. Soc. Am. B (in press)] and one should consider the probe beam multiple reflections in the thin film. The probe modulation is optically inhomogeneous due to the temperature-induced changes in refractive index. Although in the past the complexity of the analysis has impeded

  6. Optimization of laser scribing for thin-film PV modules. Final technical progress report, 12 April 1995--11 October 1997

    Compaan, A.D.; Matulionis, I.; Nakade, S. [Univ. of Toledo, OH (United States)

    1998-06-01

    This report covers the work done by the University of Toledo under this subcontract. Researchers determined the threshold power densities for the onset of ablation from thin films of CdTe, CuInSe{sub 2}, SnO{sub 2}:F, ZnO:Al, gold, and molybdenum for 12 different wavelength laser systems using wide variations of laser pulse durations. Optimum energy density for the most efficient removal of material during scribing strongly depends on the wavelength of the laser and, to a smaller extent, on the pulse duration. The optimum energy densities range from 0.5 J/sq cm for the 532-nm, 8-nsec YAG pulse on CdTe to 0.2 J/sq cm for the excimer laser at 308 nm on CIS. Poor scribing of CdTe was seen with the 1064-nm beam, ZnO was scribed poorly by all lasers except for the excimer laser. Excellent scribe profiles were observed with the 308-nm excimer lasers on all materials including ZnO.

  7. Thin film bismuth iron oxides useful for piezoelectric devices

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  8. Nanostructured thin film coatings with different strengthening effects

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  9. Physical Vapor Deposition of Thin Films

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  10. Flexible magnetic thin films and devices

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  11. Nanocomposite thin films for triggerable drug delivery.

    Vannozzi, Lorenzo; Iacovacci, Veronica; Menciassi, Arianna; Ricotti, Leonardo

    2018-05-01

    Traditional drug release systems normally rely on a passive delivery of therapeutic compounds, which can be partially programmed, prior to injection or implantation, through variations in the material composition. With this strategy, the drug release kinetics cannot be remotely modified and thus adapted to changing therapeutic needs. To overcome this issue, drug delivery systems able to respond to external stimuli are highly desirable, as they allow a high level of temporal and spatial control over drug release kinetics, in an operator-dependent fashion. Areas covered: On-demand drug delivery systems actually represent a frontier in this field and are attracting an increasing interest at both research and industrial level. Stimuli-responsive thin films, enabled by nanofillers, hold a tremendous potential in the field of triggerable drug delivery systems. The inclusion of responsive elements in homogeneous or heterogeneous thin film-shaped polymeric matrices strengthens and/or adds intriguing properties to conventional (bare) materials in film shape. Expert opinion: This Expert Opinion review aims to discuss the approaches currently pursued to achieve an effective on-demand drug delivery, through nanocomposite thin films. Different triggering mechanisms allowing a fine control on drug delivery are described, together with current challenges and possible future applications in therapy and surgery.

  12. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of application type novel-structure thin-film solar cell manufacturing technology - Development of amorphous silicon/thin-film polycrystalline silicon hybrid thin-film solar cell manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu / amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

    NONE

    1999-03-01

    The project aims to manufacture the above for the development of low-cost high-efficiency practical cells. Technologies were developed to homogeneously fabricate films with an average efficiency of 10% or more in a 100mm times 85mm area in a STAR (naturally surface texture and enhanced absorption with a back reflector) structure thin-film polycrystalline silicon (poly-Si) solar cell. The texture shape was improved for a higher light trapping effect and a STAR structure cell highly sensitive to long wavelengths and fit for use for a hybrid cell bottom layer was obtained. Various cells were examined for temperature characteristics, and it was found that thin-film poly-Si cells present a temperature coefficient equal to or less than that of bulk single-crystal silicon systems, and hybrid cells a temperature coefficient similar to that of a-Si systems. The technology was applied to a hybrid solar cell in which an a-Si cell was placed on STAR structure thin film poly-Si cells, and a resultant 3-layer a-Si/poly-Si/poly-Si cell exhibited a stabilization factor of 12.0% after 550 hours of optical irradiation. (NEDO)

  13. Optical thin films and coatings from materials to applications

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  14. Temperature dependence of LRE-HRE-TM thin films

    Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

    2003-04-01

    Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

  15. Application-related properties of giant magnetostrictive thin films

    Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

    2002-01-01

    In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

  16. In situ annealing of hydroxyapatite thin films

    Johnson, Shevon; Haluska, Michael; Narayan, Roger J.; Snyder, Robert L.

    2006-01-01

    Hydroxyapatite is a bioactive ceramic that mimics the mineral composition of natural bone. Unfortunately, problems with adhesion, poor mechanical integrity, and incomplete bone ingrowth limit the use of many conventional hydroxyapatite surfaces. In this work, we have developed a novel technique to produce crystalline hydroxyapatite thin films involving pulsed laser deposition and postdeposition annealing. Hydroxyapatite films were deposited on Ti-6Al-4V alloy and Si (100) using pulsed laser deposition, and annealed within a high temperature X-ray diffraction system. The transformation from amorphous to crystalline hydroxyapatite was observed at 340 deg. C. Mechanical and adhesive properties were examined using nanoindentation and scratch adhesion testing, respectively. Nanohardness and Young's modulus values of 3.48 and 91.24 GPa were realized in unannealed hydroxyapatite films. Unannealed and 350 deg. C annealed hydroxyapatite films exhibited excellent adhesion to Ti-6Al-4V alloy substrates. We anticipate that the adhesion and biological properties of crystalline hydroxyapatite thin films may be enhanced by further consideration of deposition and annealing parameters

  17. Thermal conductivities of thin, sputtered optical films

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  18. Electromagnetic properties of thin film lead superconductors

    Moriyama, K.

    1978-01-01

    The dependence of critical film magnetic field H/sub cf/ on temperature, thickness, and surface texture of lead superconducting films was investigated, as well as the relationship between the applied magnetic field and the applied current at the critical field. Temperature and thickness dependence data were consistent with the predictions of London, of Ginzburg, and of Bardeen, Cooper, and Schreiffer. The values of H/sub cf/ of lead films deposited on a rough surface were consistently lower than for those on a smooth surface and so were not in agreement with any currently accepted theory. The degree of lowering of H/sub cf/ by a rough surface was greater in thin films than in thick films. The expected dependence of penetration depth lambda on thickness d was not observed, and the range of lambda was somewhat greater than expected. The range of coherence length was greater than predicted. The prediction for temperature dependence of critical current by Glover and Coffey was found to involve some oversimplification, and a suggested correction is supported by the data. For applied magnetic fields perpendicular to the applied current and parallel to the film surface, the relationship between the critical values of the magnetic field and the current was as predicted for lead films by Alphonse and Bergstein

  19. Multiferroic oxide thin films and heterostructures

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  20. Domain switching of fatigued ferroelectric thin films

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-05-01

    We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  1. Domain switching of fatigued ferroelectric thin films

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  2. Highly coercive thin-film nanostructures

    Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

    2005-01-01

    The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

  3. High efficiency thin-film solar cells

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  4. Quantifying clustering in disordered carbon thin films

    Carey, J.D.

    2006-01-01

    The quantification of disorder and the effects of clustering in the sp 2 phase of amorphous carbon thin films are discussed. The sp 2 phase is described in terms of disordered nanometer-sized conductive sp 2 clusters embedded in a less conductive sp 3 matrix. Quantification of the clustering of the sp 2 phase is estimated from optical as well as from electron and nuclear magnetic resonance methods. Unlike in other disordered group IV thin film semiconductors, we show that care must be exercised in attributing a meaning to the Urbach energy extracted from absorption measurements in the disordered carbon system. The influence of structural disorder, associated with sp 2 clusters of similar size, and topological disorder due to undistorted clusters of different sizes is also discussed. Extensions of this description to other systems are also presented

  5. Thin film photovoltaic panel and method

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  6. Strain quantification in epitaxial thin films

    Cushley, M

    2008-01-01

    Strain arising in epitaxial thin films can be beneficial in some cases but devastating in others. By altering the lattice parameters, strain may give a thin film properties hitherto unseen in the bulk material. On the other hand, heavily strained systems are prone to develop lattice defects in order to relieve the strain, which can cause device failure or, at least, a decrease in functionality. Using convergent beam electron diffraction (CBED) and high-resolution transmission electron microscopy (HRTEM), it is possible to determine local strains within a material. By comparing the results from CBED and HRTEM experiments, it is possible to gain a complete view of a material, including the strain and any lattice defects present. As well as looking at how the two experimental techniques differ from each other, I will also look at how results from different image analysis algorithms compare. Strain in Si/SiGe samples and BST/SRO/MgO capacitor structures will be discussed.

  7. Method of formation of thin film component

    Wada, Chikara; Kato, Kinya

    1988-04-16

    In the production process of component which is carrying thin film device, such as thin film transistor, acid treatment is applied for etching or for preventing contamination. In case of barium borsilicate glass base, the base is affected by the acid treatment resulting the decrease of transparency. To avoid the effect, deposition of SiO/sub 2/ layer on the surface of the base is usually applied. This invention relates to the protective method of barium borosilicate surface by harnessing the effect of coexisting ion in the acid treatment bath. The method is to add 0.03-5 mol/l of phosphoric acid or its salt in the bath. By the effect of coexisting ion, barium borsilicate glass surface was protected from the damage. (2 figs)

  8. Technology support for initiation of high-throughput processing of thin-film CdTe PV modules. Phase 1 technical report, March 14, 1995--March 13, 1996

    Sasala, R.; Powell, R.; Dorer, G. [Solar Cells, Inc., Toledo, OH (United States)

    1996-06-01

    Progress has been made in the important areas of stability, advanced deposition techniques, efficiency, the back contact, no-contact film diagnostics (photoluminescence) and Cd waste control. The progress in stability has been in both the demonstration of devices maintaining at least 90% of the initial efficiency for over 19,000 hours of continuous light soak and the development of methods which can accurately predict long term behavior based on the first 5,000--10,000 hours of life. Experiments were conducted to determine if device behavior could be accelerated with thermal or voltage stresses. Notable achievements in deposition technology include depositing CdTe on a 3,600 cm{sup 2} substrate at 600 torr and designing and fabricating a new deposition feed system with a remote semiconductor source. The efficiency has been increased on small area devices to 13.3% by decreasing the thickness of the CdS and of the glass substrate. Work also focused on using a high resistivity SnO{sub 2} buffer layer between the TCO and thin CdS to help preserve the open-circuit voltage while increasing the current-density. The back contacting process has been simplified by replacing the wet post-deposition etch with a vapor Te deposition step on small area devices. Results show that the devices perform comparably in efficiency but better in stability under light-soaking and open-circuit conditions. Preliminary studies of the correlation between CdS photoluminescence after the chloride treatment and the final device efficiency have shown a positive correlation which may be applicable for in-line quality control. The final area of progress was through the successful demonstration of preventing at least 99.9% of all incoming Cd from leaving in an uncontrolled manner through the land, air or water.

  9. FY 2000 report on the results of the development of technology for commercialization of the photovoltaic power system - Development of production technology of thin film solar cells. Development of production technology of low-cost/large-area modules (Development of production technology of application type new structure thin film solar cells/Development of production technology of amorphous silicon-thin film polycrystal silicon hybrid thin film solar cells); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Oyogata shinkozo hakumaku taiyodenchi no seizo gijutsu kaihatsu, Amorufasusilicon hakumaku takessho silicon hybrid hakumaku taiyodenchi no seizo gijutsu kaihatsu)

    NONE

    2001-03-01

    For the purpose of developing the application type new structure thin film solar cell that is low-cost, high-efficient and practical, a developmental study was made of production technology of amorphous silicon/thin film polycrystal silicon hybrid thin film solar cells, and the FY 2000 results were reported. In the study of the heightening of efficiency of the small area hybrid cell, a structure was adopted in which a transparent intermediate layer was installed between a-Si cell and bottom poly-Si cell, and the initial efficiency of 14.0% was obtained in the small area cell 1cm square. As to the large area hybrid module, the initial efficiency of 11.7% and maximum output of 44.9W were achieved in the large area substrate module with a size of 910 x 455mm. In the indoor/outdoor evaluation of the output of hybrid modules, conducted were the outdoor measurement and the output measurement made every season under the mock spectral light in two-light simulator. In summer, F.F. was improved by spectral gain and anneal effect, and the effective output about 8% higher was recognized in the module after stabilization. (NEDO)

  10. Temperature-dependent evolution of chemisorbed digermane in Ge thin film growth

    Eres, D.; Sharp, J.W.

    1992-01-01

    The formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time- resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses

  11. Thin film solar cell technology in Germany

    Diehl, W.; Sittinger, V.; Szyszka, B.

    2005-01-01

    Within the scope of limited nonrenewable energy resources and the limited capacity of the ecosystem for greenhouse gases and nuclear waste, sustainability is one important target in the future. Different energy scenarios showed the huge potential for photovoltaics (PV) to solve this energy problem. Nevertheless, in the last decade, PV had an average growth rate of over 20% per year. In 2002, the solar industry delivered more than 500 MWp/year of photovoltaic generators [A. Jaeger-Waldau, A European Roadmap for PV R and D, E-MRS Spring Meeting, (2003)]. More than 85% of the current production involves crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock. On the other hand the so-called second generation thin film solar cells based on a-Si, Cu(In,Ga)(Se,S 2 (CIGS) or CdTe have material thicknesses of a few microns as a result of their direct band gap. Also, the possibility of circuit integration offers an additional cost reduction potential. Especially in Germany, there are a few companies who focus on thin film solar cells. Today, there are two manufacturers with production lines: the Phototronics (PST) division of RWE-Schott Solar with a-Si thin film technology and the former Antec Solar GmbH (now Antec Solar Energy GmbH) featuring the CdTe technology. A pilot line based on CIGS technology is run by Wuerth Solar GmbH. There is also a variety of research activity at other companies, namely, at Shell Solar, Sulfurcell Solartechnik GmbH, Solarion GmbH and the CIS-Solartechnik GmbH. We will give an overview on research activity on various thin film technologies, as well as different manufacturing and production processes in the companies mentioned above. (Author)

  12. Optical characterization of thin solid films

    Ohlídal, Miloslav

    2018-01-01

    This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

  13. The carbonization of thin polyaniline films

    Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

    2012-01-01

    Roč. 520, č. 19 (2012), s. 6088-6094 ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

  14. Study of obliquely deposited thin cobalt films

    Szmaja, W.; Kozlowski, W.; Balcerski, J.; Kowalczyk, P.J.; Grobelny, J.; Cichomski, M.

    2010-01-01

    Research highlights: → The paper reports simultaneously on the magnetic domain structure of obliquely deposited thin cobalt films (40 nm and 100 nm thick) and their morphological structure. Such studies are in fact rare (Refs. cited in the paper). → Moreover, to our knowledge, observations of the morphological structure of these films have not yet been carried out simultaneously by transmission electron microscopy (TEM) and atomic force microscopy (AFM). → The films of both thicknesses were found to have uniaxial in-plane magnetic anisotropy. → The magnetic microstructure of the films 40 nm thick was composed of domains running and magnetized predominantly in the direction perpendicular to the incidence plane of the vapor beam. → As the film thickness was changed from 40 nm to 100 nm, the magnetic anisotropy was observed to change from the direction perpendicular to parallel with respect to the incidence plane. → Thanks to the application of TEM and AFM, complementary information on the morphological structure of the films could be obtained. → In comparison with TEM images, AFM images revealed grains larger in size and slightly elongated in the direction perpendicular rather than parallel to the incidence plane. → These experimental findings clearly show that surface diffusion plays an important role in the process of film growth. → For the films 40 nm thick, the alignment of columnar grains in the direction perpendicular to the incidence plane was observed. → This correlates well with the magnetic domain structure of these films. → For the films 100 nm thick, the perpendicular alignment of columnar grains could also be found, although in fact with larger difficulty. → TEM studies showed that the films consisted mainly of the hexagonal close-packed (HCP) crystalline structure, but no preferred crystallographic orientation of the grains could be detected for the films of both thicknesses. → For the films 100 nm thick, the alignment of

  15. P-type CuxS thin films: Integration in a thin film transistor structure

    Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

    2013-01-01

    Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

  16. Neutron reflectivity of electrodeposited thin magnetic films

    Cooper, Joshaniel F.K.; Vyas, Kunal N.; Steinke, Nina-J.; Love, David M.; Kinane, Christian J.; Barnes, Crispin H.W.

    2014-01-01

    Highlights: • Electrodeposited magnetic bi-layers were measured by polarised neutron reflectivity. • When growing a CoNiCu alloy from a single bath a Cu rich region is initially formed. • This Cu rich region is formed in the first layer but not subsequent ones. • Ni deposition is inhibited in thin film growth and Co deposits anomalously. • Alloy magnetism and neutron scattering length give a self-consistent model. - Abstract: We present a polarised neutron reflectivity (PNR) study of magnetic/non-magnetic (CoNiCu/Cu) thin films grown by single bath electrodeposition. We find that the composition is neither homogeneous with time, nor consistent with bulk values. Instead an initial, non-magnetic copper rich layer is formed, around 2 nm thick. This layer is formed by the deposition of the dilute, but rapidly diffusing, Cu 2+ ions near the electrode surface at the start of growth, before the region is depleted and the deposition becomes mass transport limited. After the region has been depleted, by growth etc., this layer does not form and thus may be prevented by growing a copper buffer layer immediately preceding the magnetic layer growth. As has been previously found, cobalt deposits anomalously compared to nickel, and even inhibits Ni deposition in thin films. The layer magnetisation and average neutron scattering length are fitted independently but both depend upon the alloy composition. Thus these parameters can be used to check for model self-consistency, increasing confidence in the derived composition

  17. Preventing Thin Film Dewetting via Graphene Capping.

    Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

    2017-09-01

    A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Aluminum nitride and nanodiamond thin film microstructures

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  19. Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

    Watanabe, S.

    1984-01-01

    The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

  20. Collective Behavior of Amoebae in Thin Films

    Bae, Albert

    2005-03-01

    We have discovered new aspects of social behavior in Dictyostelium discoideum by culturing high density colonies in liquid media depleted of nutrients in confined geometries by using three different preparations: I. thin (15-40um thick) and II. ultrathin (behavior of cells despite flattening that increased their areas by over an order of magnitude. We also observed that the earliest synchronized response of cells following the onset of starvation, a precursor to aggregation, was hastened by reducing the thickness of the aqueous culture layer. We were surprised to find that the threshold concentration for aggregation was raised by thin film confinement when compared to bulk behavior. Finally, both the ultra thin and microfluidic preparations reveal, with new clarity, vortex states of aggregation.

  1. Ion beam deposited epitaxial thin silicon films

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  2. Infrared characterization of strontium titanate thin films

    Almeida, B.G.; Pietka, A.; Mendes, J.A.

    2004-01-01

    Strontium titanate thin films have been prepared at different oxygen pressures with various post-deposition annealing treatments. The films were deposited by pulsed laser ablation at room temperature on Si(0 0 1) substrates with a silica buffer layer. Infrared reflectance measurements were performed in order to determine relevant film parameters such as layer thicknesses and chemical composition. The infrared reflectance spectra were fitted by using adequate dielectric function forms for each layer. The fitting procedure provided the extraction of the dielectric functions of the strontium titanate film, the silica layer and the substrate. The as-deposited films are found to be amorphous, and their infrared spectra present peaks corresponding to modes with high damping constants. As the annealing time and temperature increases the strontium titanate layer becomes more ordered so that it can be described by its SrTiO 3 bulk mode parameters. Also, the silica layer grows along with the ordering of the strontium titanate film, due to oxidation during annealing

  3. Superconducting properties of iron chalcogenide thin films

    Paolo Mele

    2012-01-01

    Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

  4. Thermal decomposition of titanium deuteride thin films

    Malinowski, M.E.

    1983-01-01

    The thermal desorption spectra of deuterium from essentially clean titanium deuteride thin films were measured by ramp heating the films in vacuum; the film thicknesses ranged from 20 to 220 nm and the ramp rates varied from 0.5 to about 3 0 C s - 1 . Each desorption spectrum consisted of a low nearly constant rate at low temperatures followed by a highly peaked rate at higher temperatures. The cleanliness and thinness of the films permitted a description of desorption rates in terms of a simple phenomenological model based on detailed balancing in which the low temperature pressure-composition characteristics of the two-phase (α-(α+#betta#)-#betta#) region of the Ti-D system were used as input data. At temperatures below 340 0 C the model predictions were in excellent agreement with the experimentally measured desorption spectra. Interpretations of the spectra in terms of 'decomposition trajectories'' are possible using this model, and this approach is also used to explain deviations of the spectra from the model at temperatures of 340 0 C and above. (Auth.)

  5. Electrical resistivity of thin metal films

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  6. Sulfated cellulose thin films with antithrombin affinity

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  7. Preparation and properties of antimony thin film anode materials

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  8. New Sunshine Program for fiscal 2000. Development of photovoltaic system commercialization technology - Development of thin-film solar cell manufacturing technology - Development of low-cost/large area module manufacturing technology (Development of high-reliability CdTe solar cell module manufacturing technology); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Koshinraisei CdTe taiyo denchi mojuru no seizo gijutsu kaihatsu)

    NONE

    2001-03-01

    Research and development was conducted for reliable CdTe solar cell modules, large in area and high in efficiency. In the study of large-area CdS thin film fabrication, a conversion efficiency of 12.5-14.2% was achieved in a cell in a large-area substrate using a mist method-aided process of continuous CdS film fabrication. In the study of large-area CdTe thin film fabrication, the optimization was studied of the base-forming CdS film fabrication conditions and of the CdTe film fabrication conditions in a method using a CdTe powder processed by dry kneading, and a conversion efficiency peak was found to exist when the CdS film thickness was in the range of 700-900 angstrom. In the fabrication of large-area submodules, a large-area substrate was taken up, and TCO (transparent conducting oxide) film was fabricated by the mist method, CdTe film by the normal pressure CSS method, electrodes by the screen printing method, and CdTe film patterns by the blast method. As the result, a conversion efficiency of 11.0% was achieved. In a cost estimation for large-area CdTe solar cell modules, 140 yen/Wp (conversion efficiency: 11.0%, annual production: 100 MW) was obtained. (NEDO)

  9. New trends in ellipsometry for thin film diagnostics

    Masetti, E.

    1987-01-01

    Ellipsometric technique is both instrumentation and method for surface characterization through light polarization change measurements. After the improvement of the technique due to electrooptical components (light polarization modulator) and personal computer, ellipsometry today is getting new interest in optical thin film diagnostics because of automatized ellipsometer availability. The realization of a new instrument for light polarization measurement, the FDP (Four Detector Photopolarimeter), will allow the production of ellipsometers with improved characteristics and low cost. A survey on ellipsometric technique trend and preliminary data on the first realized FDP are reported

  10. Structural characterization of vacuum evaporated ZnSe thin films

    The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...

  11. Scanning tunneling spectroscopy of Pb thin films

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  12. Preparation and characterization of vanadium oxide thin films

    Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

    2013-04-16

    The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

  13. Thin film structures and phase stability

    Clemens, B.M.; Johnson, W.L.

    1990-01-01

    This was a two day symposium, with invited and contributed papers as well as an evening poster session. The first day concentrated on solid state reactions with invited talks by Lindsay Greer from the University of Cambridge, King Tu from IBM Yorktown Heights, and Carl Thompson from MIT. Professor Greer observed that the diffusion of Zr is 10 6 times slower than that of Ni in amorphous NiZr, confirming that Ni is the mobile species in solid state amorphization. King Tu explained the formation of metastable phases in this film diffusion couples by the concept of maximum rate of free energy change. Carl Thompson discussed the formation of amorphous phases in metal silicon systems, and discussed a two stage nucleation and growth process. The contributed papers also generated discussion on topics such as phase segregation, amorphous silicide formation, room temperature oxidation of silicon, and nucleation during ion beam irradiation. There was a lively poster session on Monday evening with papers on a wide variety of topics covering the general area of thin film science. The second day had sessions Epitaxy and Multilayer Structure I and II, with the morning focussing on epitaxial and heteroepitaxial growth of thin films. Robin Farrow of IBM Almaden led off with an invited talk where he reported on some remarkable success he and his co-workers have had in growing single crystal epitaxial thin films and superlattices of silver, iron, cobalt and platinum on GaAs. This was followed by several talks on epitaxial growth and characterization. The afternoon focused on interfaces and structure of multilayered materials. A session on possible stress origins of the supermodulus effect was highlighted by lively interaction from the audience. Most of the papers presented at the symposium are presented in this book

  14. Self-Limited Growth in Pentacene Thin Films.

    Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

    2017-04-05

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

  15. Theoretical investigation of the thermodynamic properties of metallic thin films

    Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac

    2015-01-01

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

  16. Theoretical investigation of the thermodynamic properties of metallic thin films

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  17. PZT Thin Film Piezoelectric Traveling Wave Motor

    Shen, Dexin; Zhang, Baoan; Yang, Genqing; Jiao, Jiwei; Lu, Jianguo; Wang, Weiyuan

    1995-01-01

    With the development of micro-electro-mechanical systems (MEMS), its various applications are attracting more and more attention. Among MEMS, micro motors, electrostatic and electromagnetic, are the typical and important ones. As an alternative approach, the piezoelectric traveling wave micro motor, based on thin film material and integrated circuit technologies, circumvents many of the drawbacks of the above mentioned two types of motors and displays distinct advantages. In this paper we report on a lead-zirconate-titanate (PZT) piezoelectric thin film traveling wave motor. The PZT film with a thickness of 150 micrometers and a diameter of 8 mm was first deposited onto a metal substrate as the stator material. Then, eight sections were patterned to form the stator electrodes. The rotor had an 8 kHz frequency power supply. The rotation speed of the motor is 100 rpm. The relationship of the friction between the stator and the rotor and the structure of the rotor on rotation were also studied.

  18. Solution processed pentacene thin films and their structural properties

    Tao Chunlan; Zhang Xuhui; Zhang Fujia; Liu Yiyang; Zhang Haoli

    2007-01-01

    The paper reported the solution process of pentacene thin films from organic solvent O-dichlorobenzene. The pentacene thin films obtained from different conditions were characterized by X-ray diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), and UV-vis spectroscopy. The result shows that the pentacene solution was successfully obtained at a minimum temperature of 40 deg. C. The optimum temperature of forming pentacene thin films was 100 deg. C

  19. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  20. Tin oxide transparent thin-film transistors

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  1. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

  2. Switching, storage, and erasure effects in a superconducting thin film

    Testardi, L.R.

    1976-01-01

    Thin niobium films can be switched from a superconducting to a resistive state permanently by application of a short electrical pulse. Application of a short pulse of opposite polarity returns the film to the superconducting state

  3. CO2 gas sensitivity of sputtered zinc oxide thin films

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  4. Physics of thin films advances in research and development

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  5. Sputtering materials for VLSI and thin film devices

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  6. Thin-Film Materials Synthesis and Processing Facility

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  7. Characterizations of photoconductivity of graphene oxide thin films

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  8. Atomic Structure Control of Silica Thin Films on Pt(111)

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  9. Tension Tests of Copper Thin Films

    Park, Kyung Jo; Kim, Chung Youb [Chonnam Nat’l Univ., Gwangju (Korea, Republic of)

    2017-08-15

    Tension tests for copper thin films with thickness of 12 μm were performed by using a digital image correlation method based on consecutive digital images. When calculating deformation using digital image correlation, a large deformation causes errors in the calculated result. In this study, the calculation procedure was improved to reduce the error, so that the full field deformation and the strain of the specimen could be accurately and directly measured on its surface. From the calculated result, it can be seen that the strain distribution is not uniform and its variation is severe, unlike the distribution in a common bulk specimen. This might result from the surface roughness introduced in the films during the fabrication process by electro-deposition.

  10. Seebeck effect of some thin film carbides

    Beensh-Marchwicka, G.; Prociow, E.

    2002-01-01

    Several materials have been investigated for high-temperature thin film thermocouple applications. These include silicon carbide with boron (Si-C-B), ternary composition based on Si-C-Mn, fourfold composition based on Si-C-Zr-B and tantalum carbide (TaC). All materials were deposited on quartz or glass substrates using the pulse sputter deposition technique. Electrical conduction and thermoelectric power were measured for various compositions at 300-550 K. It has been found, that the efficiency of thermoelectric power of films containing Si-C base composition was varied from 0.0015-0.034 μW/cmK 2 . However for TaC the value about 0.093 μW/cmK 2 was obtained. (author)

  11. TEM characterization of nanodiamond thin films.

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  12. Studies of tantalum nitride thin film resistors

    Langley, R.A.

    1975-01-01

    Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

  13. Methods for producing thin film charge selective transport layers

    Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

    2018-01-02

    Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

  14. Chemical vapour deposition of thin-film dielectrics

    Vasilev, Vladislav Yu; Repinsky, Sergei M

    2005-01-01

    Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

  15. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  16. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  17. Dimensional scaling of perovskite ferroelectric thin films

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  18. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and dessolution deposition process); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu (yokai sekishutsuho))

    NONE

    2000-03-01

    With an objective to manufacture low-cost large-area solar cell modules, developmental research has been performed on a film manufacturing technology using the dessolution deposition process. This paper summarizes the achievements in fiscal 1999. The research has been performed on a technology to form a thin silicon film directly on carbon substrates being substrates of different kinds, without using seed crystals. The researches made up to the previous fiscal year has made possible to form the film onto a substrate of about 5-cm square, has fabricated cells although with a small area, and indicated the importance of reducing concentrations of impurities in the solvent metals used. The researches performed during the current fiscal year executed modifications to reduce the temperature distribution in the substrate surfaces, including size increase in the heater, and improvement in the cooling heat conduction mechanism. As a result, films were formed successfully on 7.5-cm square substrates. In reducing the process temperatures, it was made clear that films can be formed at lower than 700 degrees C by using zinc as a solvent metal. Furthermore, the purity enhancement in the solvent metal achieved a conversion efficiency of 11.6% although the area is as small as 3.73 cm{sup 2}. (NEDO)

  19. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (production technology for amorphous silicon solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (amorphous taiyo denchi module seizo no gijutsu kaihatsu)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of amorphous Si solar cell modules in fiscal 1994. (1) On process technology for prototype film substrate solar cells, an advanced preprocessing equipment for film substrates, stepping roll type film forming technology, and prototype submodules were studied. A conversion efficiency of 7.2% was achieved by use of the submodule formed in an effective region of 40 {times} 40cm{sup 2}. (2) On efficiency improvement technology for film substrate solar cells, p/i and n/i interfaces, forming condition for Ag film electrodes, film thickness of transparent electrode ITO, and optimum transmissivity were studied. (3) On technology for advanced solar cells, high-quality a-SiGe: H film, ion control in plasma CVD, and a-Si film formation by plasma CVD using SiH2Cl2 were studied as production technology of narrow gap materials. (4) On advanced two-layer tandem solar cells, the defect density in optical degradation of a-Si cells by reverse bias dark current was evaluated, and outdoor exposure data were analyzed. 4 figs., 1 tab.

  20. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (CdS/CdTe solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (CdTe taiyo denchi module seizo no gijutsu kaihatsu)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of CdS/CdTe solar cell modules in fiscal 1994. (1) On the fabrication technology for high-efficiency large-area solar cells, high-quality CdTe active layer was studied. S content taken in the active layer at sintering of CdTe decreased with an increase in formed CdTe, resulting in improvement of Voc of cells. (2) On the window layer with wide band gap, the solar cell superior in collection efficiency and photoelectric characteristics could be obtained using the newly developed mixed crystal film of Cd(1-x)Zn(x)S. (3) On the forming technology of large-area coating/sintering films, improvement of CdS film quality was studied by pressurized processing of printed CdS films. As a result, improvement of film density and light transmissivity was confirmed. (4) On the leveling process technology of CdTe films, smooth surface films were obtained by experiment using an equipment simultaneously exciting samples in all directions as one of uniform coating methods of films. 7 figs.

  1. Environmental impact of thin-film GaInP/GaAs and multicrystalline silicon solar modules produced with solar electricity

    Mohr, N.; Meijer, A.; Huijbregts, M.A.J.; Reijnders, L.

    2009-01-01

    Background, aim, and scope: The environmental burden of photovoltaic (PV) solar modules is currently largely determined by the cumulative input of fossil energy used for module production. However, with an increased focus on limiting the emission of CO2 coming from fossil fuels, it is expected that

  2. Recent progress of obliquely deposited thin films for industrial applications

    Suzuki, Motofumi; Itoh, Tadayoshi; Taga, Yasunori

    1999-06-01

    More than 10 years ago, birefringent films of metal oxides were formed by oblique vapor deposition and investigated with a view of their application to optical retardation plates. The retardation function of the films was explained in terms of the birefringence caused by the characteristic anisotropic nanostructure inside the films. These films are now classified in the genre of the so-called sculptured thin films. However, the birefringent films thus prepared are not yet industrialized even now due to the crucial lack of the durability and the yield of products. In this review paper, we describe the present status of application process of the retardation films to the information systems such as compact disc and digital versatile disc devices with a special emphasis on the uniformity of retardation properties in a large area and the stability of the optical properties of the obliquely deposited thin films. Finally, further challenges for wide application of the obliquely deposited thin films are also discussed.

  3. Operating method of amorphous thin film semiconductor element

    Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

    1988-05-31

    The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

  4. Stable organic thin-film transistors

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  5. Properties of superconducting thin-film microbridges

    Pei, S.S.

    1978-01-01

    This work reports investigations upon the dependences of critical current and current phase relation on the dimensions of a superconducting thin-film microbridge. A model has been developed upon the Volkov's hyperbolic bridges and the Zaitsev's boundary conditions to calculate the spatial variation of the order parameter for given bridge dimensions. The results indicate that the rigid boundary conditions are good approximations to narrow bridges (W much less than L) only. The critical current density of the bridge has been calculated also as a function of the bridge dimensions. It is found that the critical current density of small bridges is enhanced above its mean field critical value due to the proximity effects of the banks. Very good agreement is found between the calculated enhancement of the critical current density and the experimental results. Direct measurements have been made on the current phase relation of indium bridges with width smaller than 0.6 μm. The difficulties due to the extra phase shifts from the series thin film electrodes are overcome by a specially designed double loop configuration which has an extra low effective inductance. It is found that the current phase relation of small bridges (W,L, xi, the results agree with the predictions of rigid boundary calculations as expected by our model

  6. Enhanced electrochromic coloration in Ag nanoparticle decorated WO3 thin films

    Kharade, Rohini R.; Mali, Sawanta S.; Patil, Satish P.; Patil, Kashinath R.; Gang, Myong G.; Patil, Pramod S.; Kim, Jin H.; Bhosale, Popatrao N.

    2013-01-01

    Highlights: • Electrochromic WO 3 /Ag nanocomposites prepared by hybrid physico-chemical route. • XRD and XPS results confirm formation of Ag 8 W 4 O 16 phase. • WO 3 /Ag thin films showed good optical transmittance change and coloration efficiency. • SPR enhanced coloration and bleaching mechanism is well explained for electrochromism. • Color stimuli are quantified using CIE chromaticity principles. -- Abstract: WO 3 /Ag composite thin films were prepared by microwave assisted sol–gel synthesis (MW-SGS) of WO 3 followed by vacuum evaporation of Ag nanoparticles and their enhanced electrochromic coloration was investigated. The composition and morphology of WO 3 thin films with different thickness of Ag layer obtained by vacuum evaporation were investigated. Distinct plasmon absorption bands of Ag nanoparticle thin films were obtained. The optical band gap energy of WO 3 /Ag films decreased with increasing the Ag layer thickness. The surface of these films has been examined using X-ray photoelectron spectroscopy (XPS) to gain information about the chemical states of species present at surfaces. Experimental results indicated that the conductivity of the films increased after surface modification by Ag layer. To investigate the origin of enhanced electrochromic absorption in optical properties, working electrode consisting of WO 3 /Ag thin film was used and observed the optical properties during electrochemical reaction. It was found that composite electrode shows enhancement in electrochromic properties in terms of optical modulation (ΔOD) and coloration efficiency (η)

  7. Optical characteristics of the thin-film scintillator detector

    Muga, L.; Burnsed, D.

    1976-01-01

    A study of the thin-film detector (TFD) was made in which various light guide and scintillator film support configurations were tested for efficiency of light coupling. Masking of selected portions of the photomultiplier (PM) tube face revealed the extent to which emitted light was received at the exposed PM surfaces. By blocking off selected areas of the scintillator film surface from direct view of the PM tube faces, a measure of the light-guiding efficiency of the film and its support could be estimated. The picture that emerges is that, as the light which is initially trapped in the thin film spreads radially outward from the ion entrance/exit point, it is scattered out of the film by minute imperfections. Optimum signals were obtained by a configuration in which the thin scintillator film was supported on a thin rectangular Celluloid frame inserted within a highly polished metal cylindrical sleeve

  8. Polycystalline silicon thin films for electronic applications

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  9. Optical constants and structural properties of thin gold films

    Yakubovsky, Dmitry I.; Arsenin, Aleksey V.; Stebunov, Yury V.

    2017-01-01

    We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold...... rules for thin-film plasmonic and nanophotonic devices....... films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part...

  10. Thinning and rupture of a thin liquid film on a heated surface

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  11. Microbridge tests on gallium nitride thin films

    Huang, Hai-You; Li, Zhi-Ying; Lu, Jun-Yong; Wang, Zhi-Jia; Zhang, Tong-Yi; Wang, Chong-Shun; Lau, Kei-May; Chen, Kevin Jing

    2009-01-01

    In this work, we develop further the microbridge testing method by deriving a closed formula of deflection versus load, which is applied at an arbitrary position on the microbridge beam. Testing a single beam at various positions allows us to characterize simultaneouslyYoung's modulus and residual stress of the beam. The developed method was then used to characterize the mechanical properties of GaN thin films on patterned-Si (1 1 1) substrates grown by metal organic chemical vapor deposition (MOCVD). The microbridge samples were fabricated by using the microelectromechanical fabrication technique and tested with a nanoindentation system. Young's modulus and residual stress of the GaN films were determined to be 287 ± 190 GPa and 851 ± 155 MPa, respectively. In addition, alternative measurements of the residual stress, Young's modulus and hardness of the GaN films, were conducted with micro-Raman spectroscopy and the nanoindentation test, yielding the corresponding values of 847 ± 46 MPa, 269.0 ± 7.0 GPa and 17.8 ± 1.1 GPa

  12. Surface microtopography of thin silver films

    Costa, Manuel F. M.; Almeida, Jose B.

    1991-01-01

    The authors present ne applications for the recently developed nori-contact optical inicrotopographer emphasizing the results of topographic inspections of thin silver films edges. These films were produced by sputtering of silver through different masks, using a planar magnetron source. The results show the influence ot the thickness and position of the masks on the topography of the film near its edge. Topographic information is obtained from the horizontal shift incurred by the bright spot on an horizontal surface, which is displaced vertically, when this is illuminated by an oblique collimated laser beam. The laser beam is focused onto the surface into a diffraction limited spot and is made to sweep the surface to be examined.. The horizontal position of the bright spot is continuously imaged onto a light detector array and the information about individual detectors that are activated is used to compute the corresponding horizontal shift on the reference plane. Simple trignometric calculations are used to relate the horizontal shift to the distance between the surface and a reference plane at each sampling point and thus a map of the surface topography can be built.

  13. Controlled nanostructuration of polycrystalline tungsten thin films

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  14. Surfactant induced flows in thin liquid films : an experimental study

    Sinz, D.K.N.

    2012-01-01

    The topic of the experimental work summarized in my thesis is the flow in thin liquid films induced by non-uniformly distributed surfactants. The flow dynamics as a consequence of the deposition of a droplet of an insoluble surfactant onto a thin liquid film covering a solid substrate where

  15. Optimized grid design for thin film solar panels

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid

  16. Dynamics of a spreading thin film with gravitational counterflow ...

    film climbing up on a vertical substrate against gravity shows interesting dynamics ... For the spreading of a thin film several theoretical studies have shown quantitative agree- ..... The two critical values of this param- ... Davis J M, Fischer B J and Troian S M 2003 A general approach to the linear stability of thin spreading.

  17. Plastic response of thin films due to thermal cycling

    Nicola, L.; van der Giessen, E.; Needleman, A.; Ahzi, S; Cherkaoui, M; Khaleel, MA; Zbib, HM; Zikry, MA; Lamatina, B

    2004-01-01

    Discrete dislocation simulations of thin films on semi-infinite substrates under cyclic thermal loading are presented. The thin film is modelled as a two-dimensional single crystal under plane strain conditions. Dislocations of edge character can be generated from initially present sources and glide

  18. Cadmium sulphide thin film for application in gamma radiation ...

    Cadmium Sulphide (CdS) thin film was prepared using pyrolytic spraying technique and then irradiated at varied gamma dosage. The CdS thin film absorption before gamma irradiation was 0.6497. Absorbed doses were computed using standard equation established for an integrating dosimeter. The plot of absorbed dose ...

  19. Electrical properties of epitaxially grown VOx thin films

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  20. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  1. Thin films of metal-organic compounds and metal nanoparticle

    Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications. S Philip Anthony Shatabdi Porel D ... Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which ...

  2. Fabrication and Performance Study of Uniform Thin Film Integrated ...

    The transmission line model of a uniform rectangular thin film R-C-KR structure consisting of a dielectric layer of constant per unit shunt capacitance C sandwiched between two resistive thin films of constant per unit length resistances R and KR has been analysed using the concept of matrix parameter functions. The above ...

  3. Thermal stability of gold-PS nanocomposites thin films

    Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...

  4. Thermal properties and stabilities of polymer thin films

    Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa

    2009-01-01

    Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)

  5. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  6. Density functional study of ferromagnetism in alkali metal thin films

    thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

  7. NbN thin films for superconducting radio frequency cavities

    Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.

    2012-12-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.

  8. NbN thin films for superconducting radio frequency cavities

    Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z

    2012-01-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)

  9. Photovoltaics: tests of thin-film technologies. 6 thin-film technologies in 3 different BIPV modes compared in a real outdoor performance test; PV-ThinFilmTest. 6 thin-film technologies in 3 different BIPV modes compared in a real outdoor performance test

    Frei, R.; Meier, Ch.

    2005-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) presents the results of a comparison made between six types of thin-film, building-integrated photovoltaic (BIPV) technologies used in three different modes of building-integration. More than 450 thin-film modules including amorphous silicon and CIS technologies were monitored. Each type of module was installed in three different modes: inclined (20{sup o}), flat with free back air flow, and flat with thermal back insulation. The performance of these commercially available thin-film BIPV systems was monitored using an extensive monitoring program. Additionally, three mono-crystalline PV arrays allowed direct comparison of the technologies. The results of the monitoring work are presented and further work to be done is discussed, including the monitoring of possible long-term degradation.

  10. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  11. Silver Nanoparticle Enhanced Freestanding Thin-Film Silicon Solar Cells

    Winans, Joshua David

    As the supply of fossil fuels diminishes in quantity the demand for alternative energy sources will consistently increase. Solar cells are an environmentally friendly and proven technology that suffer in sales due to a large upfront cost. In order to help facilitate the transition from fossil fuels to photovoltaics, module costs must be reduced to prices well below $1/Watt. Thin-film solar cells are more affordable because of the reduced materials costs, but lower in efficiency because less light is absorbed before passing through the cell. Silver nanoparticles placed at the front surface of the solar cell absorb and reradiate the energy of the light in ways such that more of the light ends being captured by the silicon. Silver nanoparticles can do this because they have free electron clouds that can take on the energy of an incident photon through collective action. This bulk action of the electrons is called a plasmon. This work begins by discussing the economics driving the need for reduced material use, and the pros and cons of taking this step. Next, the fundamental theory of light-matter interaction is briefly described followed by an introduction to the study of plasmonics. Following that we discuss a traditional method of silver nanoparticle formation and the initial experimental studies of their effects on the ability of thin-film silicon to absorb light. Then, Finite-Difference Time-Domain simulation software is used to simulate the effects of nanoparticle morphology and size on the scattering of light at the surface of the thin-film.

  12. Nanocoatings and ultra-thin films technologies and applications

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  13. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  14. Room temperature ferroelectricity in continuous croconic acid thin films

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  15. Room temperature deposition of magnetite thin films on organic substrate

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  16. Technology support for initiation of high-throughput processing of thin-film CdTe PV modules. Phase 3 final technical report, 14 March 1997--1 April 1998

    Powell, R.C.; Dorer, G.L.; Jayamaha, U.; Hanak, J.J. [Solar Cells, Inc., Toledo, OH (United States)

    1998-09-01

    Thin-film PV devices based on cadmium telluride have been identified as one of the candidates for high-performance, low-cost source of renewable electrical energy. Roadblocks to their becoming a part of the booming PV market growth have been a low rate of production and high manufacturing cost caused by several rate-limiting process steps. Solar Cells Inc. has focused on the development of manufacturing processes that will lead to high volume and low-cost manufacturing of solar cells and on increasing the performance of the present product. The process research in Phase 3 was concentrated on further refinement of a newly developed vapor transport deposition (VTD) process and its implementation into the manufacturing line. This development included subsystems for glass substrate transport, continuous feed of source materials, generation of source vapors, and uniform deposition of the semiconductor layers. As a result of this R and D effort, the VTD process has now achieved a status in which linear coating speeds in excess of 8 ft/min have been achieved for the semiconductor, equal to about two modules per minute, or 144 kW per 24 hour day. The process has been implemented in a production line, which is capable of round-the-clock continuous production of coated substrates 120 cm x 60 cm in size at a rate of 1 module every four minutes, equal to 18 kW/day. Currently the system cycle time is limited by the rate of glass introduction into the system and glass heating, but not by the rate of the semiconductor deposition. A new SCI record efficiency of 14.1% has been achieved for the cells.

  17. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    Ali, N., E-mail: nisar.ali@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Department of Physics, Govt. Post Graduate Jehanzeb College Saidu Sharif, Swat, 19200 (Pakistan); Hussain, A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Wan Shamsuri, W.N. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Fu, Y.Q., E-mail: richard.fu@northumbria.ac.uk [Department of Physics and Electrical Engineering, Faculty of Engineering & Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST (United Kingdom)

    2016-12-30

    Highlights: • A new and novel material for solar cell applications is demonstrated as a replacement for toxic and expansive compounds. • The materials used in this compound are abundant and low cost. • Compound exhibit unusual optical and electrical properties. • The band gap was found to be comparable with that of GaAs. - Abstract: Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs – one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  18. Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

    Lin, Y.C.; Li, J.Y.; Yen, W.T.

    2008-01-01

    Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

  19. Modifying thin film diamond for electronic applications

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  20. Evaluation of residual stress in sputtered tantalum thin-film

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  1. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  2. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  3. In vitro behaviour of nanocrystalline silver-sputtered thin films

    Piedade, A P; Vieira, M T; Martins, A; Silva, F

    2007-01-01

    Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications

  4. Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve

    2016-01-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax bas...

  5. Novel photon management for thin-film photovoltaics

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  6. Altering properties of cerium oxide thin films by Rh doping

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

    2015-01-01

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

  7. Pulsed laser deposition and characterisation of thin superconducting films

    Morone, A [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  8. Thin film coatings for space electrical power system applications

    Gulino, Daniel A.

    1988-01-01

    This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

  9. Preparation and optical characterization of DNA-riboflavin thin films

    Paulson, Bjorn; Shin, Inchul; Kong, Byungjoo; Sauer, Gregor; Dugasani, Sreekantha Reddy; Khazaeinezhad, Reza; Jung, Woohyun; Joo, Boram; Oh, Kyunghwan

    2016-09-01

    Thin films of DNA biopolymer thin film are fabricated by a drop casting process on glass and silicon substrates, as well as freestanding. The refractive index is measured by elliposmetry and in bulk DNA film the refractive index is shown to be increased in the 600 to 900 nm DNA transparency window by doping with riboflavin. Further analysis with FT-IR, Raman, and XRD are used to determine whether binding between riboflavin and DNA occurs.

  10. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  11. Simple turbulence measurements with azopolymer thin films.

    Barillé, Regis; Pérez, Darío G; Morille, Yohann; Zielińska, Sonia; Ortyl, Ewelina

    2013-04-01

    A simple method to measure the influence on the laser beam propagation by a turbid medium is proposed. This measurement is based on the inscription of a surface relief grating (SRG) on an azopolymer thin film. The grating obtained with a single laser beam after propagation into a turbulent medium is perturbed and directly analyzed by a CCD camera through its diffraction pattern. Later, by scanning the surface pattern with an atomic force microscope, the inscribed SRG is analyzed with the Radon transform. This method has the advantage of using a single beam to remotely inscribe a grating detecting perturbations during the beam path. A method to evaluate the refractive index constant structure is developed.

  12. Thin film femtosecond laser damage competition

    Stolz, Christopher J.; Ristau, Detlev; Turowski, Marcus; Blaschke, Holger

    2009-10-01

    In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

  13. PZT thin film actuated elastic fin micromotor.

    Dubois, M A; Muralt, P

    1998-01-01

    A piezoelectric elastic fin micromotor based on a PbZr(0.53 )Ti(0.47)O(3) thin film driving a micromachined silicon membrane was fabricated and studied. The stator was characterized by interferometry, and a laser set-up was used to measure the angular velocity and acceleration of the motor. The torque, the output power, and the efficiency of the device were extracted from these measurements. Values up to 1020 rpm and 0.94 microNm were observed for the velocity and the torque, respectively, which would be sufficient for a wristwatch application. The present version exhibited an efficiency of 0.17%, which could theoretically be increased to 4.8%

  14. Quantitative MFM on superconducting thin films

    Stopfel, Henry; Vock, Silvia; Shapoval, Tetyana; Neu, Volker; Wolff, Ulrike; Haindl, Silvia; Engelmann, Jan; Schaefer, Rudolf; Holzapfel, Bernhard; Schultz, Ludwig [IFW Dresden, Institute for Metallic Material (Germany); Inosov, Dmytro S. [Max Planck Institute for Solid State Research, Stuttgart (Germany)

    2012-07-01

    Quantitative interpretation of magnetic force microscopy (MFM) data is a challenge, because the measured signal is a convolution between the magnetization of the tip and the stray field emanated by the sample. It was established theoretically that the field distribution just above the surface of the superconductor can be well approximated by the stray field of a magnetic monopole. The description of the MFM tip, however, needs a second approximation. The temperature-dependent vortex-distribution images on a NbN thin film were fitted using two different tip models. Firstly, the magnetic tip was assumed to be a monopole that leads to the simple monopole-monopole model for the tip-sample interaction force. Performing a 2D fitting of the data with this model, we extracted λ, Δ and the vortex pinning force. Secondly, a geometrical model was applied to calculate the tip-transfer-function of the MFM tip using the numerical BEM method.

  15. Multiferroics and magnetoelectrics: thin films and nanostructures

    Martin, L W; Crane, S P; Chu, Y-H; Holcomb, M B; Gajek, M; Huijben, M; Yang, C-H; Balke, N; Ramesh, R [Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)], E-mail: lwmartin@lbl.gov

    2008-10-29

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities-such as electrical control of ferromagnetism at room temperature-researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  16. Multiferroics and magnetoelectrics: thin films and nanostructures

    Martin, L. W.; Crane, S. P.; Chu, Y.-H.; Holcomb, M. B.; Gajek, M.; Huijben, M.; Yang, C.-H.; Balke, N.; Ramesh, R.

    2008-10-01

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities—such as electrical control of ferromagnetism at room temperature—researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  17. Multiferroics and magnetoelectrics: thin films and nanostructures

    Martin, L W; Crane, S P; Chu, Y-H; Holcomb, M B; Gajek, M; Huijben, M; Yang, C-H; Balke, N; Ramesh, R

    2008-01-01

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities-such as electrical control of ferromagnetism at room temperature-researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  18. Fluctuation conductivity of thin superconductive vanadium films

    Dmitrenko, I.M.; Sidorenko, A.S.; Fogel, N.Y.

    1982-01-01

    Resistive transitions into the superconductive state are studied in thin [d >T/sub c/ the experimental data on the excess conductivity of the films agree qualitatively and quantitively with Aslamazov--Larkin theory. There is no Maki--Thompson contribution to fluctuation conductivity. Near T/sub c/ the excess conductivity sigma' changes exponentially with temperature in accordance with the predictions of the theory of the critical fluctuations of the order parameter. The values of the effective charge carrier mass defined from data on sigma' for the low fluctuation and critical fluctuation regions differ markedly. This difference is within the spread of effective masses for various charge carrier groups already known for vanadium. Causes of the difference in resistive behavior for the regions T >T/sub c/ are considered

  19. The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

    Harris Odum, Nicole Latrice

    Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

  20. Investigation of the RF pulse modulated plasma jet system during the deposition of Pb(Zr.sub.x./sub.Ti.sub.1-x./sub.)O.sub.3./sub. thin films on polymer substrates

    Hubička, Zdeněk; Čada, Martin; Adámek, P.; Virostko, Petr; Olejníček, Jiří; Deyneka, Alexander; Jastrabík, Lubomír; Jurek, Karel; Suchaneck, G.; Guenther, M.; Gerlach, G.; Boháč, Petr

    2005-01-01

    Roč. 200, - (2005), s. 940-946 ISSN 0257-8972 R&D Projects: GA AV ČR(CZ) KJB1010302 Institutional research plan: CEZ:AV0Z10100522 Keywords : : PZT thin films * plasma jet * Langmuir probe * plasma impedance Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.646, year: 2005

  1. Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

    Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

    2017-08-01

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

  2. All-back-Schottky-contact thin-film photovoltaics

    Nardone, Marco

    2016-02-01

    The concept of All-Back-Schottky-Contact (ABSC) thin-film photovoltaic (TFPV) devices is introduced and evaluated using 2D numerical simulation. Reach-through Schottky junctions due to two metals of different work functions in an alternating, side-by-side pattern along the non-illuminated side generate the requisite built-in field. It is shown that our simulation method quantitatively describes existing data for a recently demonstrated heterojunction thin-film cell with interdigitated back contacts (IBCs) of one metal type. That model is extended to investigate the performance of ABSC devices with bimetallic IBCs within a pertinent parameter space. Our calculations indicate that 20% efficiency is achievable with micron-scale features and sufficient surface passivation. Bimetallic, micron-scale IBCs are readily fabricated using photo-lithographic techniques and the ABSC design allows for optically transparent surface passivation layers that need not be electrically conductive. The key advantages of the ABSC-TFPV architecture are that window layers, buffer layers, heterojunctions, and module scribing are not required because both contacts are located on the back of the device.

  3. Ferroelectric Thin-Film Capacitors and Piezoelectric Switches for Mobile Communication Applications

    Klee, Mareike; van Esch, Harry; Keur, Wilco; Kumar, Biju; van Leuken-Peters, Linda; Liu, Jin; Mauczok, Rüdiger; Neumann, Kai; Reimann, Klaus; Renders, Christel; Roest, Aarnoud L.; Tiggelman, M.P.J.; de Wild, Marco; Wunnicke, Olaf; Zhao, Jing

    2009-01-01

    Thin-film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100

  4. Fluorine doped vanadium dioxide thin films for smart windows

    Kiri, Pragna; Warwick, Michael E.A.; Ridley, Ian; Binions, Russell

    2011-01-01

    Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.

  5. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  6. Glass transition and thermal expansivity of polystyrene thin films

    Inoue, R.; Kanaya, T.; Miyazaki, T.; Nishida, K.; Tsukushi, I.; Shibata, K.

    2006-01-01

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T g and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements

  7. Glass transition and thermal expansivity of polystyrene thin films

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  8. Thin film characterization by resonantly excited internal standing waves

    Di Fonzio, S [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  9. Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

    Beringer, Douglas B.

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

  10. Thin-film growth and the shadow instability

    Karunasiri, R.P.U.; Bruinsma, R.; Rudnick, J.

    1989-01-01

    We propose a growth model for deposition of thin amorphous films by the sputtering technique. For small values of the diffusion constant, the film develops a self-similar mountain landscape. As the diffusion constant is increased a regime is reached where growth of compact flat films is possible up to a critical height. Further deposition leads to surface roughening

  11. Inhomogeneous strain states in sputter deposited tungsten thin films

    Noyan, I.C.; Shaw, T.M.; Goldsmith, C.C.

    1997-01-01

    The results of an x-ray diffraction study of dc-magnetron sputtered tungsten thin films are reported. It is shown that the phase transformation from the β to α W can cause multilayered single-phase films where the layers have very different stress states even if the films are in the 500 nm thickness range. copyright 1997 American Institute of Physics

  12. Strain-induced properties of epitaxial VOx thin films

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  13. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  14. Photoinduced conductivity in tin dioxide thin films

    Muraoka, Y.; Takubo, N.; Hiroi, Z.

    2009-01-01

    The effects of ultraviolet light irradiation on the conducting properties of SnO 2-x thin films grown epitaxially on TiO 2 or Al 2 O 3 single-crystal substrates are studied at room temperature. A large increase in conductivity by two to four orders of magnitude is observed with light irradiation in an inert atmosphere and remains after the light is removed. The high-conducting state reverts to the original low-conducting state by exposing it to oxygen gas. These reversible phenomena are ascribed to the desorption and adsorption of negatively charged oxygen species at the grain boundaries, which critically change the mobility of electron carriers already present inside grains by changing the potential barrier height at the grain boundary. The UV light irradiation provides us with an easy and useful route to achieve a high-conducting state even at low carrier density in transparent conducting oxides and also to draw an invisible conducting wire or a specific pattern on an insulating film.

  15. Electrodeposition of thin Pd-Ag films

    Hasler, P.; Allmendinger, T.

    1993-01-01

    Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

  16. Mechanics of evolving thin film structures

    Liang, Jim

    In the Stranski-Krastanov system, the lattice mismatch between the film and the substrate causes the film to break into islands. During annealing, both the surface energy and the elastic energy drive the islands to coarsen. Motivated by several related studies, we suggest that stable islands should form when a stiff ceiling is placed at a small gap above the film. We show that the role of elasticity is reversed: with the ceiling, the total elastic energy stored in the system increases as the islands coarsen laterally. Consequently, the islands select an equilibrium size to minimize the combined elastic energy and surface energy. In lithographically-induced self-assembly, when a two-phase fluid confined between parallel substrates is subjected to an electric field, one phase can self-assemble into a triangular lattice of islands in another phase. We describe a theory of the stability of the island lattice. The islands select the equilibrium diameter to minimize the combined interface energy and electrostatic energy. Furthermore, we study compressed SiGe thin film islands fabricated on a glass layer, which itself lies on a silicon wafer. Upon annealing, the glass flows, and the islands relax. A small island relaxes by in-plane expansion. A large island, however, wrinkles at the center before the in-plane relaxation arrives. The wrinkles may cause significant tensile stress in the island, leading to fracture. We model the island by the von Karman plate theory and the glass layer by the Reynolds lubrication theory. Numerical simulations evolve the in-plane expansion and the wrinkles simultaneously. We determine the critical island size, below which in-plane expansion prevails over wrinkling. Finally, in devices that integrate dissimilar materials in small dimensions, crack extension in one material often accompanies inelastic deformation in another. We analyze a channel crack advancing in an elastic film under tension, while an underlayer creeps. We use a two

  17. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  18. Large-area SnO2: F thin films by offline APCVD

    Wang, Yan; Wu, Yucheng; Qin, Yongqiang; Zhang, Zhihai; Shi, Chengwu; Zhang, Qingfeng; Li, Changhao; Xia, Xiaohong; Sun, Stanley; Chen, Leon

    2011-01-01

    Highlights: → Large-area (1245 mm x 635 mm) FTO thin films were successfully deposited by offline APCVD process. → The as-prepared FTO thin films with sheet resistance 8-11 Ω/□ and direct transmittance more than 83% exhibited better than that of the online ones. → The maximum quantum efficiency of the solar cells based on offline FTO substrate was 0.750 at wavelength 540 nm. → The power of the solar modules using the offline FTO as glass substrates was 51.639 W, higher than that of the modules based on the online ones. -- Abstract: In this paper, we reported the successful preparation of fluorine-doped tin oxide (FTO) thin films on large-area glass substrates (1245 mm x 635 mm x 3 mm) by self-designed offline atmospheric pressure chemical vapor deposition (APCVD) process. The FTO thin films were achieved through a combinatorial chemistry approach using tin tetrachloride, water and oxygen as precursors and Freon (F-152, C2H4F2) as dopant. The deposited films were characterized for crystallinity, morphology (roughness) and sheet resistance to aid optimization of materials suitable for solar cells. We got the FTO thin films with sheet resistance 8-11 Ω/□ and direct transmittance more than 83%. X-ray diffraction (XRD) characterization suggested that the as-prepared FTO films were composed of multicrystal, with the average crystal size 200-300 nm and good crystallinity. Further more, the field emission scanning electron microscope (FESEM) images showed that the films were produced with good surface morphology (haze). Selected samples were used for manufacturing tandem amorphous silicon (a-Si:H) thin film solar cells and modules by plasma enhanced chemical vapor deposition (PECVD). Compared with commercially available FTO thin films coated by online chemical vapor deposition, our FTO coatings show excellent performance resulting in a high quantum efficiency yield for a-Si:H solar cells and ideal open voltage and short circuit current for a-Si:H solar

  19. Thermoelectric effects of amorphous Ga-Sn-O thin film

    Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

    2017-07-01

    The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

  20. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    Oba, Tatsuya; Vacha, Martin

    2012-01-01

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films

  1. Resistivity of thiol-modified gold thin films

    Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

    2014-01-01

    In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography

  2. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  3. Effect of solution concentration on MEH-PPV thin films

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

  4. Resistivity of thiol-modified gold thin films

    Correa-Puerta, Jonathan [Instituto de Física, Pontificia Universidad Católica de Valparaíso, Av. Universidad 330, Curauma, Valparaíso (Chile); Del Campo, Valeria [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Henríquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Häberle, Patricio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

    2014-11-03

    In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography.

  5. Valence control of cobalt oxide thin films by annealing atmosphere

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  6. Laser nanostructuring of ZnO thin films

    Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

    2016-06-30

    Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

  7. Combinatorial MAPLE gradient thin film assemblies signalling to human osteoblasts

    Axente, Emanuel; Sima, Felix; Elena Sima, Livia; Serban, Natalia; Ristoscu, Carmen; Mihailescu, Ion N; Erginer, Merve; Toksoy Oner, Ebru; Eroglu, Mehmet S; Petrescu, Stefana M

    2014-01-01

    There is increased interest in smart bioactive materials to control tissue regeneration for the engineering of cell instructive scaffolds. We introduced combinatorial matrix-assisted pulsed laser evaporation (C-MAPLE) as a new method for the fabrication of organic thin films with a compositional gradient. Synchronized C-MAPLE of levan and oxidized levan was employed to assemble a two-compound biopolymer film structure. The gradient of the film composition was validated by fluorescence microscopy. In this study, we investigated the cell response induced by the compositional gradient using imaging of early osteoblast attachment and analysis of signalling phosphoprotein expression. Cells attached along the gradient in direct proportion to oxidized levan concentration. During this process distinct areas of the binary gradient have been shown to modulate the osteoblasts’ extracellular signal-regulated kinase signalling with different propensity. The proposed fabrication method results in the preparation of a new bioactive material, which could control the cell signalling response. This approach can be extended to screen new bioactive interfaces for tissue regeneration. (papers)

  8. Oxidation of ruthenium thin films using atomic oxygen

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  9. Fabrication and properties of SmFe2-PZT magnetoelectric thin films

    Giouroudi, Ioanna

    2013-05-17

    Magnetoelectric (ME) thin film composites are attracting a continually increasing interest due to their unique features and potential applications in multifunctional microdevices and integrated units such as sensors, actuators and energy harvesting modules. By combining piezoelectric and highly magnetostrictive thin films, the potentialities of these materials increase. In this paper we report the fabrication of SmFe2 and PZT thin films and the investigation of their properties. First of all, a ~ 400 nm thin SmFe film was deposited on top of Si/SiO2 substrate by magnetron sputter deposition. Afterwards, a 140 nm Pt bottom electrode was sputtered on top of the SmFe film forming a bottom electrode. Spin coating was employed for the deposition of the 150 nm thin PZT layer. A PZT solution with 10 %Pb excess was utilized for this fabrication step. Finally, circular Pt top electrodes were sputtered as top electrodes. This paper focuses on the microstructure of the individual films characterized by X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). A piezoelectric evaluation system, aixPES, with TF2000E analyzer component was used for the electric hysteresis measurements of PZT thin films and a vibrating sample magnetometer (VSM) was employed for the magnetic characterization of the SmFe. The developed thin films and the fabricated double layer SmFe-PZT exhibit both good ferromagnetic and piezoelectric responses which predict a promising ME composite structure. The quantitative chemical composition of the samples was confirmed by energy dispersive spectroscopy (EDX). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  10. Fabrication and properties of SmFe2-PZT magnetoelectric thin films

    Giouroudi, Ioanna; Alnassar, Mohammed; Kosel, Jü rgen

    2013-01-01

    Magnetoelectric (ME) thin film composites are attracting a continually increasing interest due to their unique features and potential applications in multifunctional microdevices and integrated units such as sensors, actuators and energy harvesting modules. By combining piezoelectric and highly magnetostrictive thin films, the potentialities of these materials increase. In this paper we report the fabrication of SmFe2 and PZT thin films and the investigation of their properties. First of all, a ~ 400 nm thin SmFe film was deposited on top of Si/SiO2 substrate by magnetron sputter deposition. Afterwards, a 140 nm Pt bottom electrode was sputtered on top of the SmFe film forming a bottom electrode. Spin coating was employed for the deposition of the 150 nm thin PZT layer. A PZT solution with 10 %Pb excess was utilized for this fabrication step. Finally, circular Pt top electrodes were sputtered as top electrodes. This paper focuses on the microstructure of the individual films characterized by X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). A piezoelectric evaluation system, aixPES, with TF2000E analyzer component was used for the electric hysteresis measurements of PZT thin films and a vibrating sample magnetometer (VSM) was employed for the magnetic characterization of the SmFe. The developed thin films and the fabricated double layer SmFe-PZT exhibit both good ferromagnetic and piezoelectric responses which predict a promising ME composite structure. The quantitative chemical composition of the samples was confirmed by energy dispersive spectroscopy (EDX). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  11. Transparent thin film polarizing and optical control systems

    Nelson V. Tabiryan

    2011-06-01

    Full Text Available We show that a diffractive waveplate can be combined with a phase retardation film for fully converting light of arbitrary polarization state into a polarized light. Incorporating a photonic bandgap layer into a system of such polarizers that unify different polarization states in the input light into a single polarization state at its output, rather than absorbing or reflecting half of it, we developed and demonstrated a polarization-independent optical controller capable of switching between transmittive and reflective states. The transition between those states is smoothly controlled with low-voltage and low-power sources. Using versatile fabrication methods, this “universally polarizing optical controller” can be integrated into a thin package compatible with a variety of display, spatial light modulation, optical communication, imaging and other photonics systems.

  12. Ecodesign perspectives of thin-film photovoltaic technologies

    Chatzisideris, Marios Dimos; Espinosa Martinez, Nieves; Laurent, Alexis

    2016-01-01

    Here, we review 33 life cycle assessment (LCA) studies of thin-film photovoltaic (PV) technologies that have had a holistic coverage in their assessments and/or have included ecodesign aspects. Only five of them were found to have a comprehensive life cycle and impact coverage, and their analyses...... ecodesign considerations in parts of the PV life cycle, the analysis of the eleven of them addressing primary energy demand during module production suggests that electricity consumption during the metal deposition processes is a top contributor and should be prioritised by PV technology developers....... A similar analysis of the ten studies having included the balance of system components (BOS) in the assessments showed that these contribute significantly to most environmental impact categories. Beyond recommending that stakeholders in the PV field rely on LCA to support decision-making and to guide...

  13. Amorphization reaction in thin films of elemental Cu and Y

    Johnson, R. W.; Ahn, C. C.; Ratner, E. R.

    1989-10-01

    Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh-vacuum dc ion-beam deposition chamber. The amorphization reaction was monitored by in situ x-ray-diffraction measurements. Growth of amorphous Cu1-xYx is observed at room temperature with the initial formation of a Cu-rich amorphous phase. Further annealing in the presence of unreacted Y leads to Y enrichment of the amorphous phase. Growth of crystalline CuY is observed for T=469 K. Transmission-electron-microscopy measurements provide real-space imaging of the amorphous interlayer and growth morphology. Models are developed, incorporating metastable interfacial and bulk free-energy diagrams, for the early stage of the amorphization reaction.

  14. Molecular simulation of freestanding amorphous nickel thin films

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  15. Multifunctional Parylene-C Microfibrous Thin Films

    Chindam, Chandraprakash

    Towards sustainable development, multifunctional products have many advantageous over single-function products: reduction in number of parts, raw material, assembly time, and cost involved in a product's life cycle. My goal for this thesis was to demonstrate the multifunctionalities of Parylene-C microfibrous thin films. To achieve this goal, I chose Parylene C, a polymer, because the fabrication of periodic mediums of Parylene C in the form of microfibrous thin films (muFTFs) was already established. A muFTFs is a parallel arrangement of identical micrometer-sized fibers of shapes cylindrical, chevronic, or helical. Furthermore, Parylene C had three existing functions: in medical-device industries as corrosion-resistive coatings, in electronic industries as electrically insulating coatings, and in biomedical research for tissue-culture substrates. As the functionalities of a material are dependent on the microstructure and physical properties, the investigation made for this thesis was two-fold: (1) Experimentally, I determined the wetting, mechanical, and dielectric properties of columnar muFTFs and examined the microstructural and molecular differences between bulk films and muFTFs. (2) Using physical properties of bulk film, I computationally determined the elastodynamic and determined the electromagnetic filtering capabilities of Parylene-C muFTFs. Several columnar muFTFs of Parylene C were fabricated by varying the monomer deposition angle. Following are the significant experimental findings: 1. Molecular and microstructural characteristics: The dependence of the microfiber inclination angle on the monomer deposition angle was classified into four regimes of two different types. X-ray diffraction experiments indicated that the columnar muFTFs contain three crystal planes not evident in bulk Parylene-C films and that the columnar muFTFs are less crystalline than bulk films. Infrared absorbance spectra revealed that the atomic bonding is the same in all

  16. Ferroelectric and piezoelectric thin films and their applications for integrated capacitors, piezoelectric ultrasound transducers and piezoelectric switches

    Klee, M; Boots, H; Kumar, B; Heesch, C van; Mauczok, R; Keur, W; Wild, M de; Esch, H van; Roest, A L; Reimann, K; Leuken, L van; Wunnicke, O; Zhao, J; Schmitz, G; Mienkina, M; Mleczko, M; Tiggelman, M

    2010-01-01

    Ferroelectric and piezoelectric thin films are gaining more and more importance for the integration of high performance devices in small modules. High-K 'Integrated Discretes' devices have been developed, which are based on thin film ferroelectric capacitors integrated together with resistors and ESD protection diodes in a small Si-based chip-scale package. Making use of ferroelectric thin films with relative permittivity of 950-1600 and stacking processes of capacitors, extremely high capacitance densities of 20-520 nF/mm 2 , high breakdown voltages up to 140 V and lifetimes of more than 10 years at operating voltages of 5 V and 85 deg. C are achieved. Thin film high-density capacitors play also an important role as tunable capacitors for applications such as tuneable matching circuits for RF sections of mobile phones. The performance of thin film tuneable capacitors at frequencies between 1 MHz and 1 GHz is investigated. Finally thin film piezoelectric ultrasound transducers, processed in Si- related processes, are attractive for medical imaging, since they enable large bandwidth (>100%), high frequency operation and have the potential to integrate electronics. With these piezoelectric thin film ultrasound transducers real time ultrasound images have been realized. Finally, piezoelectric thin films are used to manufacture galvanic MEMS switches. A model for the quasi-static mechanical behaviour is presented and compared with measurements.

  17. Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

    Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

  18. Development of neutron diffuse scattering analysis code by thin film and multilayer film

    Soyama, Kazuhiko

    2004-01-01

    To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

  19. Buckling of Thin Films in Nano-Scale

    Li L.A.

    2010-06-01

    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  20. Stability of tetraphenyl butadiene thin films in liquid xenon

    Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.

    2016-01-01

    Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.

  1. Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

    Nakayama, Hiroyasu; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Saitoh, Eiji; Ye, Jianting; Iwasa, Yoshihiro

    2012-01-01

    Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25) MV cm -1 of electric field by applying only 1.7 V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems. (author)

  2. Modification of thin film properties by ion bombardment during deposition

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  3. Electrochromic properties of nanocrystalline MoO3 thin films

    Hsu, C.-S.; Chan, C.-C.; Huang, H.-T.; Peng, C.-H.; Hsu, W.-C.

    2008-01-01

    Electrochromic MoO 3 thin films were prepared by a sol-gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO 3 thin films. The effects of annealing temperatures ranging from 100 o C to 500 o C were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO 4 /propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO 3 thin films heat-treated at 350 o C varied from 80% to 35% at λ = 550 nm (ΔT = ∼ 45%) and from 86% to 21% at λ ≥ 700 nm (ΔT = ∼ 65%) after coloration. Films heat-treated at 350 deg. C exhibited the best electrochromic properties in the present study

  4. Residual stress in spin-cast polyurethane thin films

    Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)

    2015-01-19

    Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.

  5. The state of the art of thin-film photovoltaics

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  6. Thin film circuits for future applications. Pt. 2. Evaporation technique

    Haug, G; Houska, K H; Schmidt, H J; Sprengel, H P; Wohak, K

    1976-06-01

    Investigations of thin film diffusion processes and reactions with encapsulation materials resulted in improved long term stability of evaporated NiCr resistors, SiO capacitors and NiCr/Au conductors for thin film circuits. Stable NiCr resistor networks can be formed on ceramic substrates, and SiO capacitors of good quality can be deposited on the new very smooth ceramic substrates. The knowledge of the influence of evaporation parameters make the production of SiO capacitors with definite properties and good reproducibility possible. The range of capacitance of tantalum thin film circuits can be extended by integration with evaporated SiO capacitors.

  7. XRay Study of Transfer Printed Pentacene Thin Films

    Shao, Y.; Solin, S. A.; Hines, D. R.; Williams, E. D.

    2007-01-01

    We investigated the structural properties and transfer properties of pentacene thin films fabricated by thermal deposition and transfer printing onto SiO2 and plastic substrates, respectively. The dependence of the crystallite size on the printing time, temperature and pressure were measured. The increases of crystalline size were observed when pentacene thin films were printed under specific conditions, e.g. 120 deg. C and 600 psi and can be correlated with the improvement of the field effect mobility of pentacene thin-film transistors

  8. Optical properties of CeO 2 thin films

    Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10-6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly ...

  9. Principles of electron backscattering by solids and thin films

    Niedrig, H.

    1977-01-01

    The parameters concerning the electron backscattering from thin films and solids (atomic scattering cross-section, atomic number, single/multiple scattering, film thickness of self-supporting films and of surface films on bulk substrates, scattering angular distribution, angle of incidence, diffraction effects) are described. Their influence on some important contrast mechanisms in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, orientation contrast) is discussed. The main backscattering electron detection systems are briefly described. (orig.) [de

  10. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of next-generation thin-film solar cell module manufacturing technology - Development of CIS solar cell module manufacturing technology - Development of high-quality film enlargement technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi module no seizo gijutsu kaihatsu / CIS taiyo denchi module no seizo gijutsu kaihatsu / kohinshitsumaku no daimensekika gijutsu kaihatsu

    NONE

    1999-03-01

    The project aims to establish a manufacturing process that enables both high-quality CuInSe{sub 2} (CIS) film solar cell enlargement and cost reduction and to develop a device structure which uses less heavy metal for the purposes of increasing the CIS thin-film solar cell size and efficiency and decreasing environmental impact. Several element technologies have been established for increasing the area of high-efficiency Cu(In, Ga)Se{sub 2} (CIGS) solar cells. Concerning the enlargement of the photoabsorption layer which is to assume the most important role, it is found that a high-quality CIGS film, which is near homogeneous though within a 10cm times 10cm area, is fabricated by an in-line vapor deposition method. As for dead area reduction and high-speed patterning, it is found that laser scribing works effectively in the patterning of the window layer and photoabsorption layer. As for reduction in the use of heavy metal, a high efficiency of 16.2% is attained in a cell not using a CdS film as expected in the case of a cell using a CdS film, this thanks to a CIGS film surface reforming technique. The technique of junction formation for CIGS solar cells is improved, and then a true efficiency of 18.5% is achieved. (NEDO)

  11. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

    Robert J. Lovelett

    2016-04-01

    Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

  12. Dewetting of thin polymer film on rough substrate: II. Experiment

    Volodin, Pylyp; Kondyurin, Alexey

    2008-01-01

    The theory of the dewetting process developed for a model of substrate-film interaction forces was examined by an experimental investigation of the dewetting process of thin polystyrene (PS) films on chemically etched silicon substrates. In the dependence on PS films thickness and silicon roughness, various situations of dewetting were observed as follows: (i) if the wavelength of the substrate roughness is much larger than the critical spinodal wavelength of a film, then spinodal dewetting of the film is observed; (ii) if the wavelength of the substrate roughness is smaller than the critical wavelength of the film and the substrate roughness is larger in comparison with film thickness, then the dewetting due to substrate roughness is observed and the dewetted film patterns repeat the rough substrate structure; (iii) if the wavelength of the substrate roughness is smaller than the critical wavelength of the film and the substrate roughness is small in comparison with the film thickness, then spinodal dewetting proceeds

  13. Ideal glass transitions in thin films: An energy landscape perspective

    Truskett, Thomas M.; Ganesan, Venkat

    2003-07-01

    We introduce a mean-field model for the potential energy landscape of a thin fluid film confined between parallel substrates. The model predicts how the number of accessible basins on the energy landscape and, consequently, the film's ideal glass transition temperature depend on bulk pressure, film thickness, and the strength of the fluid-fluid and fluid-substrate interactions. The predictions are in qualitative agreement with the experimental trends for the kinetic glass transition temperature of thin films, suggesting the utility of landscape-based approaches for studying the behavior of confined fluids.

  14. Strain Relaxation and Vacancy Creation in Thin Platinum Films

    Gruber, W.; Chakravarty, S.; Schmidt, H.; Baehtz, C.; Leitenberger, W.; Bruns, M.; Kobler, A.; Kuebel, C.

    2011-01-01

    Synchrotron based combined in situ x-ray diffractometry and reflectometry is used to investigate the role of vacancies for the relaxation of residual stress in thin metallic Pt films. From the experimentally determined relative changes of the lattice parameter a and of the film thickness L the modification of vacancy concentration and residual strain was derived as a function of annealing time at 130 deg. C. The results indicate that relaxation of strain resulting from compressive stress is accompanied by the creation of vacancies at the free film surface. This proves experimentally the postulated dominant role of vacancies for stress relaxation in thin metal films close to room temperature.

  15. Soft Magnetic Multilayered Thin Films for HF Applications

    Loizos, George; Giannopoulos, George; Serletis, Christos; Maity, Tuhin; Roy, Saibal; Lupu, Nicoleta; Kijima, Hanae; Yamaguchi, Masahiro; Niarchos, Dimitris

    Multilayered thin films from various soft magnetic materials were successfully prepared by magnetron sputtering in Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the films show good soft magnetic properties: magnetic coercivity of 1-10 Oe and saturation magnetization higher than 1T. The initial permeability of the films is greater than 300 and flattens up to 600 MHz. The multilayer thin film properties in combination with their easy, fast and reproducible fabrication indicate that they are potential candidates for high frequency applications.

  16. Microwave Josephson generation in thin film superconducting bridges

    Gubankov, V.N.; Koshelets, V.P.; Ovsyannikov, G.A.

    1975-01-01

    Thin-film bridges have some advantage over other types of superconducting weak links: good definition of electromagnetic parameters and of weak region geometry. Up to now Josephson properties of bridges have been investigated by using indirect methods (the effect of magnetic field on the critical current I 0 , the bridge behavior in a microwave field, etc.). Direct experimental observation of Josephson radiation from autonomous thin film bridges is reported. Microwave radiation in tin bridges of 'variable' thickness has been investigated where the thickness of the film forming the bridge is far less than the thickness of the bank films. (Auth.)

  17. Photoinduced hydrophobic surface of graphene oxide thin films

    Zhang Xiaoyan; Song Peng; Cui Xiaoli

    2012-01-01

    Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

  18. Tools to synthesize the learning of thin films

    Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.

  19. Thin Films for X-ray Optics

    Conley, Raymond

    Focusing x-rays with refraction requires an entire array of lens instead of a single element, each contributing a minute amount of focusing to the system. In contrast to their visible light counterparts, diffractive optics require a certain depth along the optical axis in order to provide sufficient phase shift. Mirrors reflect only at very shallow angles. In order to increase the angle of incidence, contribution from constructive interference within many layers needs to be collected. This requires a multilayer coating. Thin films have become a central ingredient for many x-ray optics due to the ease of which material composition and thickness can be controlled. Chapter 1 starts with a short introduction and survey of the field of x-ray optics. This begins with an explanation of reflective multilayers. Focusing optics are presented next, including mirrors, zone plates, refractive lenses, and multilayer Laue lens (MLL). The strengths and weaknesses of each "species" of optic are briefly discussed, alongside fabrication issues and the ultimate performance for each. Practical considerations on the use of thin-films for x-ray optics fabrication span a wide array of topics including material systems selection and instrumentation design. Sputter deposition is utilized exclusively for the work included herein because this method of thin-film deposition allows a wide array of deposition parameters to be controlled. This chapter also includes a short description of two deposition systems I have designed. Chapter 2 covers a small sampling of some of my work on reflective multilayers, and outlines two of the deposition systems I have designed and built at the Advanced Photon Source. A three-stripe double multilayer monochromator is presented as a case study in order to detail specifications, fabrication, and performance of this prolific breed of x-ray optics. The APS Rotary Deposition System was the first deposition system in the world designed specifically for multilayer

  20. Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

    Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

    2010-08-15

    In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

  1. Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

    Kagan; Mitzi; Dimitrakopoulos

    1999-10-29

    Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

  2. ITO thin films deposited by advanced pulsed laser deposition

    Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

    2007-01-01

    Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

  3. Broadband back grating design for thin film solar cells

    Janjua, Bilal; Jabbour, Ghassan E.

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  4. Laser-Printed Organic Thin-Film Transistors

    Diemer, Peter J.; Harper, Angela F.; Niazi, Muhammad Rizwan; Petty, Anthony J.; Anthony, John E.; Amassian, Aram; Jurchescu, Oana D.

    2017-01-01

    their incorporation in large-scale manufacturing processes. Here, the first ever organic thin-film transistor fabricated with an electrophotographic laser printing process using a standard office laser printer is reported. This completely solvent-free additive

  5. Preparation of Nb thin films with bulk transition temperatures

    Peirce, L H [Florida State Univ., Tallahassee (USA). Dept. of Physics

    1984-08-01

    Thin films (1000-2000 A) of Nb were prepared with bulk transition temperatures (9.25 K) by evaporation from an electron gun. Necessary substrate temperatures, evaporation rates and H/sub 2/O pressures were determined.

  6. A Variational approach to thin film hydrodynamics of binary mixtures

    Xu, Xinpeng; Thiele, Uwe; Qian, Tiezheng

    2015-01-01

    In order to model the dynamics of thin films of mixtures, solutions, and suspensions, a thermodynamically consistent formulation is needed such that various coexisting dissipative processes with cross couplings can be correctly described

  7. Chemical solution deposition of functional oxide thin films

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  8. Mechanism of spontaneous hole formation in thin polymeric films

    Yu, Kaijia; Rasmussen, Henrik K.; Román Marín, José Manuel

    2012-01-01

    We show computationally that (molten) thin polymeric film containing nonequilibrium configurations originating from a solvent evaporation may develop holes spontaneously in the molten state, and that they appear delayed. Polymers above the glass transition temperature are liquids where the flow...

  9. Simple gun for vapor deposition of organic thin films

    Sato, N.; Seki, K.; Inokuchi, H.

    1987-01-01

    A simple evaporation gun for preparing organic thin films was fabricated using commercially available parts of an electron gun for a TV Braun tube. The device permits sample heating to be easily controlled because of the small heat capacity

  10. Multiferroic iron oxide thin films at room temperature

    Gich, M.; Fina, I.; Morelli, Alessio; Sánchez, F.; Alexe, M.; Gazquez, J.; Fontcuberta, J.; Roig, A.

    2014-01-01

    Roč. 26, č. 27 (2014), s. 4645-4652 ISSN 0935-9648 Institutional support: RVO:68378271 Keywords : multiferroic * iron oxide * thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 17.493, year: 2014

  11. Bandtail characteristics in InN thin films

    Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

    2002-01-01

    The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers

  12. High Performance Thin-Film Composite Forward Osmosis Membrane

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A.; Schiffman, Jessica D.; Elimelech, Menachem

    2010-01-01

    obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed

  13. A thin film hydroponic system for plant studies

    Hines, Robert; Prince, Ralph; Muller, Eldon; Schuerger, Andrew

    1990-01-01

    The Land Pavillion, EPCOT Center, houses a hydroponic, thin film growing system identical to that residing in NASA's Biomass Production Chamber at Kennedy Space Center. The system is targeted for plant disease and nutrition studies. The system is described.

  14. Phonon transport across nano-scale curved thin films

    Mansoor, Saad B.; Yilbas, Bekir S., E-mail: bsyilbas@kfupm.edu.sa

    2016-12-15

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  15. Phonon transport across nano-scale curved thin films

    Mansoor, Saad B.; Yilbas, Bekir S.

    2016-01-01

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  16. Inverse bilayer magnetoelectric thin film sensor

    Yarar, E.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Chair for Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Salzer, S.; Höft, M.; Knöchel, R. [Microwave Laboratory, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Chair for Synthesis and Real Structure, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)

    2016-07-11

    Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

  17. Product reliability and thin-film photovoltaics

    Gaston, Ryan; Feist, Rebekah; Yeung, Simon; Hus, Mike; Bernius, Mark; Langlois, Marc; Bury, Scott; Granata, Jennifer; Quintana, Michael; Carlson, Carl; Sarakakis, Georgios; Ogden, Douglas; Mettas, Adamantios

    2009-08-01

    Despite significant growth in photovoltaics (PV) over the last few years, only approximately 1.07 billion kWhr of electricity is estimated to have been generated from PV in the US during 2008, or 0.27% of total electrical generation. PV market penetration is set for a paradigm shift, as fluctuating hydrocarbon prices and an acknowledgement of the environmental impacts associated with their use, combined with breakthrough new PV technologies, such as thin-film and BIPV, are driving the cost of energy generated with PV to parity or cost advantage versus more traditional forms of energy generation. In addition to reaching cost parity with grid supplied power, a key to the long-term success of PV as a viable energy alternative is the reliability of systems in the field. New technologies may or may not have the same failure modes as previous technologies. Reliability testing and product lifetime issues continue to be one of the key bottlenecks in the rapid commercialization of PV technologies today. In this paper, we highlight the critical need for moving away from relying on traditional qualification and safety tests as a measure of reliability and focus instead on designing for reliability and its integration into the product development process. A drive towards quantitative predictive accelerated testing is emphasized and an industrial collaboration model addressing reliability challenges is proposed.

  18. Magnetostatic excitations in thin ferrite films

    Zil'berman, P.E.; Lugovskoi, A.V.

    1987-01-01

    The authors discuss the influence of the exchange interaction and dissipative processes in thin ferrite films on the eigenfrequency spectrum of magnetostatic standing waves and on the dispersion relation and attenuation of magnetostatic traveling waves. For the first time they obtain explicitly the dispersion relation for magnetostatic waves (MSWs) in a tangential saturating magnetic field H 0 to second order (inclusive) in the exchange interaction parameter λ. The authors obtain computer solutions for this equation in the complex frequency (ω) plane (for standing waves) or wave-number (q) plane (for traveling waves). The authors show that the dispersion relation constructed from the standing-wave spectrum is different from that of the traveling waves if λ≠0, even if dissipation is neglected. The traveling waves have auxiliary branches of the dispersion relation with weak damping near the spin-wave-resonance (SWR) frequencies. Dissipation has only a relatively weak effect on the frequency spectrum of the standing waves, shifting it upward. For the traveling waves, however, dissipation leads to qualitative changes in the structure of the dispersion relation, giving rise to new branches, forbidden bands, reentrant and anomalous-dispersion regions

  19. Thin film deposition using rarefied gas jet

    Pradhan, Sahadev, , Dr.

    2017-06-01

    The rarefied gas jet of aluminium is studied at Mach number Ma = (Uj /√{ kbTj / mg }) in the range .01 PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kbis the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn=0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number, which allows scattering collisions to rapidly direct the atoms to the substrate.

  20. Nanopolar reorientation in ferroelectric thin films

    Hubert, C.; Levy, J.; Rivkin, T. V.; Carlson, C.; Parilla, P. A.; Perkins, J. D.; Ginley, D. S.

    2001-01-01

    The influence of varying oxygen pressure P(O 2 ) during the growth of Ba 0.4 Sr 0.6 TiO 3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O 2 ). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (P c =85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O 2 )=P c

  1. Trends and new applications in thin films

    1996-01-01

    The proceedings of this symposium comprise 95 communications from which 64 were selected and fall into the scope of INIS subject categories, and 1 was selected for ETDE indexing. The selected communications deal with the techniques used for thin films preparation using chemical or physical vapor deposition techniques (plasma-arc or jet spraying, cathode sputtering, reactive DC or RF magnetron sputtering, plasma-ion deposition, ion implantation, electron or ion beam spraying, ion beam assisted plasma etching, dynamic ion mixing, distributed electron cyclotron resonance plasma sputtering, laser induced plasma sputtering etc..). The effects and interactions with the substrates (ion implantation, crystal growth, crystal-phase transformations, microstructures, penetration depth, changes in lattice parameters etc..) are analysed using various techniques such as grazing incidence X-ray diffraction, X-ray reflectometry, X-ray and angle resolved electron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectroscopy, SEM, TEM, IR absorption spectroscopy, UV or visible emission spectroscopy, conversion electron Moessbauer spectroscopy, X-ray fluorescence, mass spectroscopy, optical ellipsometry etc.. Mechanical tests such as scratch, microhardness and wear tests are also performed on the coatings to analyse their mechanical properties. (J.S.)

  2. Lasing in liquid crystal thin films

    Palto, S. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)], E-mail: palto@online.ru

    2006-09-15

    A lasing condition is formulated in matrix form for optically anisotropic thin films. Lasing behavior of liquid-crystal slabs is analyzed. In particular, it is shown that if the spatial extent of a liquid crystal slab is much larger than its thickness, then laser emission is feasible not only along the normal to the slab, but also in the entire angular sector. The generated laser light can be observed experimentally as a spot or as concentric rings on a screen. The lowest lasing threshold corresponds to in-plane sliding modes leaking into the substrate. The feedback required for lasing is provided by reflection from the interfaces, rather than edges, of the liquid-crystal slab operating as a planar Fabry-Perot cavity. For cholesteric liquid crystals, it is shown that energy loss to the sliding modes leaking into the substrates and escaping through their edges is a key factor that limits the efficiency of band-edge emission along the normal to the slab.

  3. Silicon Thin-Film Solar Cells

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  4. Nanostructured refractory thin films for solar applications

    Ollier, E.; Dunoyer, N.; Dellea, O.; Szambolics, H.

    2014-08-01

    Selective solar absorbers are key elements of all solar thermal systems. Solar thermal panels and Concentrated Solar Power (CSP) systems aim respectively at producing heat and electricity. In both cases, a surface receives the solar radiation and is designed to have the highest optical absorption (lowest optical reflectivity) of the solar radiation in the visible wavelength range where the solar intensity is the highest. It also has a low emissivity in the infrared (IR) range in order to avoid radiative thermal losses. Current solutions in the state of the art usually consist in deposited interferential thin films or in cermets [1]. Structured surfaces have been proposed and have been simulated because they are supposed to be more efficient when the solar radiation is not normal to the receiving surface and because they could potentially be fabricated with refractory materials able to sustain high operating temperatures. This work presents a new method to fabricate micro/nanostructured surfaces on molybdenum (refractory metal with a melting temperature of 2623°C). This method now allows obtaining a refractory selective surface with an excellent optical selectivity and a very high absorption in the visible range. This high absorption performance was obtained by achieving a double structuration at micro and nano scales thanks to an innovative process flow.

  5. Properties of Spray Pyrolysied Copper Oxide Thin Films

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  6. Laser-induced damage to thin film dielectric coatings

    Walker, T.W.

    1980-01-01

    The laser-induced damage thresholds of dielectric thin film coatings have been found to be more than an order of magnitude lower than the bulk material damage thresholds. Prior damage studies have been inconclusive in determining the damage mechanism which is operative in thin films. A program was conducted in which thin film damage thresholds were measured as a function of laser wavelength (1.06 μm, 0.53 μm, 0.35 μm and 0.26 μm), laser pulse length (5 and 15 nanoseconds), film materials and film thickness. The large matrix of data was compared to predictions given by avalanche ionization, multiphoton ionization and impurity theories of laser damage. When Mie absorption cross-sections and the exact thermal equations were included into the impurity theory excellent agreement with the data was found. The avalanche and multiphoton damage theories could not account for most parametric variations in the data. For example, the damage thresholds for most films increased as the film thickness decreased and only the impurity theory could account for this behavior. Other observed changes in damage threshold with changes in laser wavelength, pulse length and film material could only be adequately explained by the impurity theory. The conclusion which results from this study is that laser damage in thin film coatings results from absorbing impurities included during the deposition process

  7. Characterization of thin films with synchrotron radiation in SPring-8

    Komiya, Satoshi

    2005-01-01

    Many studies about thin films by using synchrotron radiation in SPring-8 were reviewed. Structural analyses and assessment of thin films used for electronics, and also assessment of insulating films for the gate used in LSI were carried out. Film thickness, unevenness, and density of SiO 2 films in order of nanomer thickness were determined by interference fringes of x-ray reflection curves. The interface structure of (SiO 2 /Si) films was studied by x-ray crystal truncation rod scattering, and the correlation between leakage character depending on nitrogen concentration and interface structure was clarified on SiON film. The oxygen concentration in HfO films in nanometer thickness was determined by x-ray fluorescence analysis, and the interface reaction for HfO 2 /SiO 2 was clearly observed by electron spectroscopy. The structure of amorphous thin films with large dielectric constant was analyzed by x-ray absorption fine structure (XAFS) spectrum. Devices fabricated from multi-layer films showing giant magnetic resistance were developed for hard disk with a large memory. The character of giant magnetic resistance was governed by multi-layer thin film structure piled up by magnetic and nonmagnetic polycrystalline thin metals. For the multi-layer structure, the concentration distribution of constituent elements was determined to the direction of film thickness by x-ray reflection analysis and grazing incident x-ray fluorescence analysis. In the semiconductor laser source, Ga 1-x In x N, used for DVD, the local structure around In ions was studied by XAFS since constituent instability, especially overpopulation of In element, caused the deterioration of lifetime and light emission of the laser. The lattice constant of the light emission layer in InGaAs was measured by x-ray micro-beams. (author)

  8. Application of HTSC-thin films in microwave bandpass filters

    Jha, A.R.

    1993-01-01

    This paper reveals unique performance capabilities of High-Temperature Superconducting Thin-Film (HTSCTFs) for possible applications in microwave bandpass filters (BPFs). Microwave filters fabricated with HTSCTFs have demonstrated lowest insertion loss, highest rejection, and sharpest skirt selectivity. Thin films of Yttrium Barium Copper Oxide (YBCO), Bismuth Strontium Calcium Copper Oxide (BSCCO) and Thallium Calcium Barium Copper Oxide (TCBCO) will be most attractive for filters

  9. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

    2017-01-01

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  10. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  11. Simple flash evaporator for making thin films of compounds

    Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

    2010-07-15

    A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

  12. Chapter 23. Single and Heterostructure Multiferroic Thin Films

    Barbier , Antoine

    2018-01-01

    International audience; Multiferroic oxide materials exhibiting several long range ferroic orders are of high interest because of their wide range of potential applications. The incorporation of their genuine properties in new devices, offering additional physical properties, requires often elaborating them in form of thin films. Retaining their multiferroic characteristics is very challenging. However, thin films can be structured on the nanometer scale and additional degrees of freedom, suc...

  13. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  14. Multiferroicity in oxide thin films and heterostructures

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  15. Participation of the Third Order Optical Nonlinearities in Nanostructured Silver Doped Zinc Oxide Thin Solid Films

    C. Torres-Torres

    2012-01-01

    Full Text Available We report the transmittance modulation of optical signals in a nanocomposite integrated by two different silver doped zinc oxide thin solid films. An ultrasonic spray pyrolysis approach was employed for the preparation of the samples. Measurements of the third-order nonlinear optical response at a nonresonant 532 nm wavelength of excitation were performed using a vectorial two-wave mixing. It seems that the separated contribution of the optical nonlinearity associated with each film noticeable differs in the resulting nonlinear effects with respect to the additive response exhibited by the bilayer system. An enhancement of the optical Kerr nonlinearity is predicted for prime number arrays of the studied nanoclusters in a two-wave interaction. We consider that the nanostructured morphology of the thin solid films originates a strong modification of the third-order optical phenomena exhibited by multilayer films based on zinc oxide.

  16. Field emission mechanism from a single-layer ultra-thin semiconductor film cathode

    Duan Zhiqiang; Wang Ruzhi; Yuan Ruiyang; Yang Wei; Wang Bo; Yan Hui

    2007-01-01

    Field emission (FE) from a single-layer ultra-thin semiconductor film cathode (SUSC) on a metal substrate has been investigated theoretically. The self-consistent quantum FE model is developed by synthetically considering the energy band bending and electron scattering. As a typical example, we calculate the FE properties of ultra-thin AlN film with an adjustable film thickness from 1 to 10 nm. The calculated results show that the FE characteristic is evidently modulated by varying the film thickness, and there is an optimum thickness of about 3 nm. Furthermore, a four-step FE mechanism is suggested such that the distinct FE current of a SUSC is rooted in the thickness sensitivity of its quantum structure, and the optimum FE properties of the SUSC should be attributed to the change in the effective potential combined with the attenuation of electron scattering

  17. Thin films as an emerging platform for drug delivery

    Sandeep Karki

    2016-10-01

    Full Text Available Pharmaceutical scientists throughout the world are trying to explore thin films as a novel drug delivery tool. Thin films have been identified as an alternative approach to conventional dosage forms. The thin films are considered to be convenient to swallow, self-administrable, and fast dissolving dosage form, all of which make it as a versatile platform for drug delivery. This delivery system has been used for both systemic and local action via several routes such as oral, buccal, sublingual, ocular, and transdermal routes. The design of efficient thin films requires a comprehensive knowledge of the pharmacological and pharmaceutical properties of drugs and polymers along with an appropriate selection of manufacturing processes. Therefore, the aim of this review is to provide an overview of the critical factors affecting the formulation of thin films, including the physico-chemical properties of polymers and drugs, anatomical and physiological constraints, as well as the characterization methods and quality specifications to circumvent the difficulties associated with formulation design. It also highlights the recent trends and perspectives to develop thin film products by various companies.

  18. The optical properties of plasma polymerized polyaniline thin films

    Goktas, Hilal, E-mail: hilal_goktas@yahoo.com [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Demircioglu, Zahide; Sel, Kivanc [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Gunes, Taylan [Yalova University, Energy Systems Engineering Department, 77100 Yalova (Turkey); Kaya, Ismet [Canakkale Onsekiz Mart University, Chemistry Department, 17020 Canakkale (Turkey)

    2013-12-02

    We report herein the characterizations of polyaniline thin films synthesized using double discharge plasma system. Quartz glass substrates were coated at a pressure of 80 Pa, 19.0 kV pulsed and 1.5 kV dc potential. The substrates were located at different regions in the reactor to evaluate the influence of the position on the morphological and molecular structure of the obtained thin films. The molecular structure of the thin films was investigated by Fourier transform infrared (FTIR) and UV–visible photospectrometers (UV–vis), and the morphological studies were carried out by scanning electron microscope. The FTIR and UV–vis data revealed that the molecular structures of the synthesized thin films were in the form of leuocoemeraldine and exhibited similar structures with the films produced via chemical or electrochemical methods. The optical energy band gap values of the as-grown samples ranged from 2.5 to 3.1 eV, which indicated that these materials have potential applications in semiconductor devices. The refractive index in the transparent region (from 650 to 1000 nm) steadily decreased from 1.9 to 1.4 and the extinction coefficient was found to be on order of 10{sup −4}. The synthesized thin films showed various degrees of granular morphologies depending on the location of the substrate in the reactor. - Highlights: • Polyaniline thin films were synthesized for the first time via double discharge plasma system. • The films have similar structure to that of the chemically synthesized films. • The morphology of the films could be tuned by this technique. • These materials would have potential applications at semiconductor devices.

  19. Emergent Topological Phenomena in Thin Films of Pyrochlore Iridates

    Yang, Bohm-Jung; Nagaosa, Naoto

    2014-06-01

    Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.

  20. Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

    Yave, Wilfredo; Car, Anja; Wind, Jan; Peinemann, Klaus Viktor

    2010-01-01

    Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform