Magnetic domains in Ni-Mn-Ga martensitic thin films

International Nuclear Information System (INIS)

Chernenko, V A; Anton, R Lopez; Kohl, M; Ohtsuka, M; Orue, I; Barandiaran, J M

2005-01-01

A series of martensitic Ni 52 Mn 24 Ga 24 thin films deposited on alumina ceramic substrates has been prepared by using RF(radio-frequency) magnetron sputtering. The film thickness, d, varies from 0.1 to 5.0m. Magnetic domain patterns have been imaged by the MFM (magnetic force microscopy) technique. A maze domain structure is found for all studied films. MFM shows a large out-of-plane magnetization component and a rather uniform domain width for each film thickness. The domain width, δ, depends on the film thickness as δ∝√d in the whole studied range of film thickness. This dependence is the expected one for magnetic anisotropy and magnetostatic contributions in a perpendicular magnetic domain configuration. The proportionality coefficient is also consistent with the values of saturation magnetization and magnetic anisotropy determined in the samples

High magnetic field properties of Fe-pnictide thin films

Energy Technology Data Exchange (ETDEWEB)

Kurth, Fritz

2015-11-20

The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for

Magnetic Property in Large Array Niobium Antidot Thin Films

Science.gov (United States)

Tinghui, Chen; Hsiang-Hsi, Kung; Wei-Li, Lee; Institute of Physics, Academia Sinica, Taipei, Taiwan Team

2014-03-01

In a superconducting ring, the total flux inside the ring is required to be an integer number of the flux quanta. Therefore, a supercurrent current can appear within the ring in order to satisfy this quantization rule, which gives rise to certain magnetic response. By using a special monolayer polymer/nanosphere hybrid we developed previously, we fabricated a series of superconducting niobium antidot thin films with different antidot diameters. The antidots form well-ordered triangular lattice with a lattice spacing about 200 nm and extend over an area larger than 1 cm2, which enables magnetic detections simply by a SQUID magnetometer. We observed magnetization oscillation with external magnetic field due to the supercurrent screening effect, where different features for large and small antidot thin films were found. Detailed size and temperature dependencies of the magnetization in niobium antidot nanostructures will be presented.

Magnetism in spin-coated pristine TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Hassini, Awatef [IUT de Blois, 3 place Jean Jaures, C.S. 2903, 41029 Blois (France); Sakai, Joe [Laboratoire LEMA, UMR 6157 CNRS/CEA, Universite Francois Rabelais, Parc de Grandmont, 37200 Tours (France); Lopez, Josep Santiso [Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, Bellaterra 08193 (Spain); Nguyen Hoa Hong [Laboratoire LEMA, UMR 6157 CNRS/CEA, Universite Francois Rabelais, Parc de Grandmont, 37200 Tours (France)], E-mail: nguyen.hoahong@univ-tours.fr

2008-04-28

Spin coated pristine TiO{sub 2} thin films show magnetic behaviors that are similar to those of pulsed laser ablated TiO{sub 2} thin films that were reported previously. It seems that in this kind of material, ferromagnetism (FM) is indeed intrinsic, and it can be achieved by various deposition techniques. The fact that oxygen annealing degrades the magnetic moment implies that the observed magnetism is likely due to defects or/and oxygen vacancies. Moreover, thick films that were deposited under the same growth conditions have the magnetic ordering degraded enormously. It is found that as for FM in undoped TiO{sub 2} films made by the chemical solution deposition, not only do defects/oxygen vacancies play a role, but also the confinement effects seem to be important.

Magnetic-field induced semimetal in topological crystalline insulator thin films

International Nuclear Information System (INIS)

Ezawa, Motohiko

2015-01-01

We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material

Magnetic-field induced semimetal in topological crystalline insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Ezawa, Motohiko, E-mail: ezawa@ap.t.u-tokyo.ac.jp

2015-06-19

We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material.

The influence of the surface topography on the magnetization dynamics in soft magnetic thin films

NARCIS (Netherlands)

Craus, CB; Palasantzas, G; Chezan, AR; De Hosson, JTM; Boerma, DO; Niesen, L

2005-01-01

In this work we study the influence of surface roughness on the magnetization dynamics of soft magnetic nanocrystalline Fe-Zr-N thin films deposited (under identical conditions) onto a Si oxide, a thin polymer layer, and a thin Cu layer. The substrate temperature during deposition was approximately

Fabrication and magnetization measurement of Ni thin films on silicon substrate by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Tang Yang [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)], E-mail: dxzhao2000@yahoo.com.cn; Shen Dezhen; Zhang Jiying; Li Binghui; Lu Youming; Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

2008-02-29

Ni thin films were electrodeposited on n-Si (100) substrate from the electrolytes containing Ni(CH{sub 3}COO){sub 2} and CH{sub 3}COONH{sub 4} at room temperature. The scanning electron microscope images of the films reveals the uniform distribution of the nickel all over the substrate surface, which illustrates that the fine Ni films on large scales could be obtained through the method of electrodeposition. Vibrating sample magnetometer measurement with the applied field parallel to the surface shows obvious hysteresis loops of the magnetic thin films. The morphology and magnetism of the Ni thin films evolves with the deposition time increasing. The effect of deposition conditions on the properties of the Ni thin films is investigated.

Effects of magnetic flux densities on microstructure evolution and magnetic properties of molecular-beam-vapor-deposited nanocrystalline Fe_3_0Ni_7_0 thin films

International Nuclear Information System (INIS)

Cao, Yongze; Wang, Qiang; Li, Guojian; Ma, Yonghui; Du, Jiaojiao; He, Jicheng

2015-01-01

Nanocrystalline Fe_3_0Ni_7_0 (in atomic %) thin films were prepared by molecular-beam-vapor deposition in magnetic fields with different magnetic flux densities. The microstructure evolution of these thin films was studied by atomic force microscopy, transmission electron microscopy, and high resolution transmission electron microscopy; the soft magnetic properties were examined by vibrating sample magnetometer at room temperature. The results show that all our Fe_3_0Ni_7_0 thin films feature an fcc single-phase structure. With increasing magnetic flux density, surface roughness, average particle size and grain size of the thin films decreased, and the short-range ordered clusters (embryos) of thin films increased. Additionally, the magnetic anisotropy in the in-plane and the coercive forces of the thin films gradually reduced with increasing magnetic flux density. - Highlights: • With increasing magnetic flux density, average particle size of films decreased. • With increasing magnetic flux density, surface roughness of thin films decreased. • With increasing magnetic flux density, short-range ordered clusters increased. • With increasing magnetic flux density, the coercive forces of thin films reduced. • With increasing magnetic flux density, soft magnetic properties are improved.

Strain Induced Magnetism in SrRuO3 Epitaxial Thin Films

Energy Technology Data Exchange (ETDEWEB)

Grutter, A.; Wong, F.; Arenholz, E.; Liberati, M.; Suzuki, Y.

2010-01-10

Epitaxial SrRuO{sub 3} thin films were grown on SrTiO{sub 3}, (LaAlO{sub 3}){sub 0.3}(SrAlO{sub 3}){sub 0.7} and LaAlO{sub 3} substrates inducing different biaxial compressive strains. Coherently strained SrRuO{sub 3} films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 {micro}{sub B} per formula unit. A comparison of (001) and (110) SrRuO{sub 3} films on each substrate indicates that films on (110) oriented have consistently higher saturated moments than corresponding (001) films. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.

Magnetic and magneto-optical properties of FeRh thin films

International Nuclear Information System (INIS)

Inoue, Sho; Nam, Nguyen T.; Phuoc, Nguyen N.; Cao Jiangwei; Yu Ko, Hnin Yu; Suzuki, Takao

2008-01-01

The magnetic and magneto-optical properties of FeRh thin films epitaxially deposited onto MgO(1 0 0) substrates by RF sputter-deposition system have been investigated in conjunction with the structure. An intriguing virgin effect has been found in the M-T curves of the as-deposited FeRh thin films, which is presumably interpreted in term of a change in structural phase when heating. Also, a (negative) maximum peak of Kerr rotation at around 3.8 eV has been observed when FeRh thin films are in ferromagnetic state. The polar Kerr rotation angle is found to increase at temperatures above 100 deg. C, which corresponds to the antiferromagnet (AF)-ferromagnet (FM) transition of FeRh thin films

Structural and magnetic studies of Cr doped nickel ferrite thin films

International Nuclear Information System (INIS)

Panwar, Kalpana; Heda, N. L.; Tiwari, Shailja; Bapna, Komal; Ahuja, B. L.; Choudhary, R. J.; Phase, D. M.

2016-01-01

We have studied the structural and magnetic properties of Cr doped nickel ferrite thin films deposited on Si (100) and Si (111) using pulsed laser deposition technique. The films were deposited under vacuum and substrate temperature was kept at 700°C. X-ray diffraction analysis revealed that films on both substrates have single phase cubic spinel structure. However, the film grown on Si (111) shows better crystalline behavior. Fourier transform infrared spectroscopy suggests that films on both substrates have mixed spinel structure. These films show magnetic hysteresis behavior and magnetization value of film on Si (100) is larger than that on Si (111). It turns out that structural and magnetic properties of these two films are correlated.

Structural, mechanical and magnetic study on galvanostatic electroplated nanocrystalline NiFeP thin films

Science.gov (United States)

Kalaivani, A.; Senguttuvan, G.; Kannan, R.

2018-03-01

Nickel based alloys has a huge applications in microelectronics and micro electromechanical systems owing to its superior soft magnetic properties. With the advantages of simplicity, cost-effectiveness and controllable patterning, electroplating processes has been chosen to fabricate thin films in our work. The soft magnetic NiFeP thin film was successfully deposited over the surface of copper plate through galvanostatic electroplating method by applying constant current density of 10 mA cm-2 for a deposition rate for half an hour. The properties of the deposited NiFeP thin films were analyzed by subjecting it into different physio-chemical characterization such as XRD, SEM, EDAX, AFM and VSM. XRD pattern confirms the formation of NiFeP particles and the structural analysis reveals that the NiFeP particles were uniformly deposited over the surface of copper substrate. The surface roughness analysis of the NiFeP films was done using AFM analysis. The magnetic studies and the hardness of the thin film were evaluated from the VSM and hardness test. The NiFeP thin films possess lower coercivity with higher magnetization value of 69. 36 × 10-3 and 431.92 Gauss.

Spin interference of neutrons tunneling through magnetic thin films

International Nuclear Information System (INIS)

Hino, Masahiro; Achiwa, Norio; Tasaki, Seiji; Ebisawa, Toru; Akiyoshi, Tsunekazu; Kawai, Takeshi.

1996-01-01

Larmor precession of a neutron spin is represented as the superposition of the wave functions of the two Stern-Gerlach states ↑ and ↓. A transverse neutron spin echo (NSE) spectrometer can hence be used as a neutron spin interferometer (NSI) by setting a magnetic film, such as iron and permalloy45 (Fe 55 Ni 45 ), thin enough to permit tunneling at an incident angle above and below the critical angle of the total reflection in the Larmor precession field. The NSI can be used to study spin coherent superposition and rotation of the Larmor precession through a magnetic thin film for a tunneling ↑ spin neutron and a non-tunneling ↓ spin neutron and to get the tunneling time using Larmor clock. The NSI experiments were carried out to measure the shifts of NSE signals transmitted through magnetic iron films with thicknesses of 200 and 400 A and those magnetic permalloy45 films with thicknesses of 200 and 400 A, respectively, as a function of the incident angle. Then even in tunneling ↑ spin neutron and non-tunneling ↓ spin neutron, NSE signal was observed. The phase delay was measured in iron and permalloy45 films with thickness of 200 A, and the tunneling time using Larmor clock was estimated to be 4 ± 0.6 x 10 -9 sec. (author)

Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

International Nuclear Information System (INIS)

Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

2013-01-01

Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

Energy Technology Data Exchange (ETDEWEB)

Ehsani, M.H., E-mail: Ehsani@semnan.ac.ir [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Mehrabad, M. Jalali [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Kameli, P. [Department of Physics, Isfahan University of technology, Isfahan 8415683111 (Iran, Islamic Republic of)

2016-11-01

In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films. - Graphical abstract: Simulation results of the cobalt particles tracing sputtered from the source to substrate with an external magnetic field. Convergence of the particles flux (left) and also the spiral motion of the cobalt particles (right) increase dramatically as they approach the substrate and NdFe35 magnet. - Highlights: • The external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. • Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. • The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. • To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field

Magnetic force acting on a magnetic dipole over a superconducting thin film

International Nuclear Information System (INIS)

Wei, J.C.; Chen, J.L.; Horng, L.; Yang, T.J.

1996-01-01

The magnetostatic interaction energy and corresponding magnetic force acting on a magnetic point dipole placed above a type-II thin superconducting film in the mixed state with a single vortex are calculated using electromagnetics coupled with the London theory of superconductivity. If a vortex is trapped by a circular defect of radius b 1, where a is the separation between the dipole and the thin film, the only difference between two results is in the cutoff length, i.e., in the case of a circular defect the only difference in the critical position calculation is the cutoff at radius b rather than at coherence length ξ. The pinning force of a single vortex by a circular defect is also calculated. Further, we investigate the conditions of the vortex creation for various cases (including the first, second, and third vortices) for a free of pinning center in the examining region. It is found that the creation of a new single vortex in the thin film causes an abrupt change in vertical levitation force: the force changed discontinuously. copyright 1996 The American Physical Society

Structural and magnetic properties of [001] CoCr2O4 thin films

NARCIS (Netherlands)

Guzman, Roger; Heuver, Jeroen; Matzen, Sylvia; Magen, Cesar; Noheda, Beatriz

2017-01-01

The spinel CoCr2O4 (CCO) is one of the few bulk multiferroics with net magnetic moment. However, studies on the properties of CCO thin films are scarce. Here, we investigate the interplay between microstructure and magnetism of a series of CCO epitaxial thin films by means of x-ray diffraction,

Human action pattern monitor for telecare system utilizing magnetic thin film infrared sensor

International Nuclear Information System (INIS)

Osada, H.; Chiba, S.; Oka, H.; Seki, K.

2002-01-01

The magnetic thin film infrared sensor (MFI) is an infrared sensing device utilizing a temperature-sensitive magnetic thin film with marked temperature dependence in the room temperature range. We propose a human action pattern monitor (HPM) constructed with the MFI, without a monitor camera to save the clients' privacy, as a telecare system

Local imaging of magnetic flux in superconducting thin films

International Nuclear Information System (INIS)

Shapoval, Tetyana

2010-01-01

Local studies of magnetic flux line (vortex) distribution in superconducting thin films and their pinning by natural and artificial defects have been performed using low-temperature magnetic force microscopy (LT-MFM). Taken a 100 nm thin NbN film as an example, the depinning of vortices from natural defects under the influence of the force that the MFM tip exerts on the individual vortex was visualized and the local pinning force was estimated. The good agreement of these results with global transport measurements demonstrates that MFM is a powerful and reliable method to probe the local variation of the pinning landscape. Furthermore, it was demonstrated that the presence of an ordered array of 1-μm-sized ferromagnetic permalloy dots being in a magneticvortex state underneath the Nb film significantly influences the natural pinning landscape of the superconductor leading to commensurate pinning effects. This strong pinning exceeds the repulsive interaction between the superconducting vortices and allows vortex clusters to be located at each dot. Additionally, for industrially applicable YBa 2 Cu 3 O 7-δ thin films the main question discussed was the possibility of a direct correlation between vortices and artificial defects as well as vortex imaging on rough as-prepared thin films. Since the surface roughness (droplets, precipitates) causes a severe problem to the scanning MFM tip, a nanoscale wedge polishing technique that allows to overcome this problem was developed. Mounting the sample under a defined small angle results in a smooth surface and a monotonic thickness reduction of the film along the length of the sample. It provides a continuous insight from the film surface down to the substrate with surface sensitive scanning techniques. (orig.)

Soft magnetic properties and damping parameter of (FeCo-Al alloy thin films

Directory of Open Access Journals (Sweden)

Isao Kanada

2017-05-01

Full Text Available For high frequency device applications, a systematic study of the soft magnetic properties and magnetization dynamics of (FeCo-Al alloy thin films has been carried out. A low effective damping parameter αeff of 0.002 and a high saturation magnetization of about 1,800 emu/cc are obtained at y=0.2∼0.3 for (Fe1-yCoy98Al2 alloy thin films deposited onto fused silica and MgO(100 at an ambient temperature during deposition. Those films are of the bcc structure with the orientation normal to the film plane. They possess a columnar structure, grown along the film normal. The column width is found to be about 20 nm for y=0.25. It is concluded that the (FeCo-Al thin films with a damping parameter as low as 0.002 and high saturation magnetization of about 1,800 emu/cc have been successfully fabricated, and that they are potential for future high frequency device applications.

Composition, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

Energy Technology Data Exchange (ETDEWEB)

Annadurai, A.; Nandakumar, A.K.; Jayakumar, S.; Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore 641004 (India); Manivel Raja, M.; Bysak, S. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India); Gopalan, R. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)], E-mail: rg_gopy@yahoo.com; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)

2009-03-15

Polycrystalline Ni-Mn-Ga thin films were deposited by the d.c. magnetron sputtering on well-cleaned substrates of Si(1 0 0) and glass at a constant sputtering power of 36 W. We report the influence of sputtering pressure on the composition, structure and magnetic properties of the sputtered thin films. These films display ferromagnetic behaviour only after annealing at an elevated temperature and a maximum saturation magnetization of 335 emu/cc was obtained for the films investigated. Evolution of martensitic microstructure was observed in the annealed thin films with the increase of sputtering pressure. The thermo-magnetic curves exhibited only magnetic transition in the temperature range of 339-374 K. The thin film deposited at high sputtering pressure of 0.025 mbar was found to be ordered L2{sub 1} austenitic phase.

Microstructural and magnetic properties of thin obliquely deposited films: A simulation approach

Energy Technology Data Exchange (ETDEWEB)

Solovev, P.N., E-mail: platon.solovev@gmail.com [Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Izotov, A.V. [Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Belyaev, B.A. [Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Reshetnev Siberian State Aerospace University, 31, pr. Imeni Gazety “Krasnoyarskii Rabochii”, Krasnoyarsk 660014 (Russian Federation)

2017-05-01

The relation between microstructural and magnetic properties of thin obliquely deposited films has been studied by means of numerical techniques. Using our developed simulation code based on ballistic deposition model and Fourier space approach, we have investigated dependences of magnetometric tensor components and magnetic anisotropy parameters on the deposition angle of the films. A modified Netzelmann approach has been employed to study structural and magnetic parameters of an isolated column in the samples with tilted columnar microstructure. Reliability and validity of used numerical methods is confirmed by a good agreement of the calculation results with each other, as well as with our experimental data obtained by the ferromagnetic resonance measurements of obliquely deposited thin Ni{sub 80}Fe{sub 20} films. The combination of these numerical methods can be used to design a magnetic film with a desirable value of uniaxial magnetic anisotropy and to extract the obliquely deposited film structure from only magnetic measurements. - Highlights: • We present a simulation approach to study a relation between structural and magnetic properties of oblique films. • The calculated dependence of magnetic anisotropy on a deposition angle accords well with the experiment. • A modified Netzelmann approach is proposed. • It allows for the computation of magnetic and structural parameters of an isolated column. • Proposed approach can be used for theoretical studies and for characterization of oblique films.

Spontaneous magnetization of thin films of ordered and disordered alloys of transition metals

International Nuclear Information System (INIS)

Nguyen Nhat Khanh.

1989-12-01

A method of calculation of spontaneous magnetization of thin films of transition metal alloys is described. The method is based on the Hubbard model for d electrons. Use of the Bragg-Williams approximation and two-dimensional canonical transformations has allowed to calculate the magnetization. Results for a Ni 3 Fe thin film are presented. (author). 11 refs, 1 fig

Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

Science.gov (United States)

Guiffard, B.; Seveno, R.

2015-01-01

In this study, we report the magnetically induced electric field E 3 in Pb(Zr0.57Ti0.43)O3 (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B ac at 45 kHz) and static magnetic induction ( B dc) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B dc——is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B ac and B dc induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E 3 versus B dc could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of under B dc = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems.

Local imaging of magnetic flux in superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Shapoval, Tetyana

2010-01-26

Local studies of magnetic flux line (vortex) distribution in superconducting thin films and their pinning by natural and artificial defects have been performed using low-temperature magnetic force microscopy (LT-MFM). Taken a 100 nm thin NbN film as an example, the depinning of vortices from natural defects under the influence of the force that the MFM tip exerts on the individual vortex was visualized and the local pinning force was estimated. The good agreement of these results with global transport measurements demonstrates that MFM is a powerful and reliable method to probe the local variation of the pinning landscape. Furthermore, it was demonstrated that the presence of an ordered array of 1-{mu}m-sized ferromagnetic permalloy dots being in a magneticvortex state underneath the Nb film significantly influences the natural pinning landscape of the superconductor leading to commensurate pinning effects. This strong pinning exceeds the repulsive interaction between the superconducting vortices and allows vortex clusters to be located at each dot. Additionally, for industrially applicable YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films the main question discussed was the possibility of a direct correlation between vortices and artificial defects as well as vortex imaging on rough as-prepared thin films. Since the surface roughness (droplets, precipitates) causes a severe problem to the scanning MFM tip, a nanoscale wedge polishing technique that allows to overcome this problem was developed. Mounting the sample under a defined small angle results in a smooth surface and a monotonic thickness reduction of the film along the length of the sample. It provides a continuous insight from the film surface down to the substrate with surface sensitive scanning techniques. (orig.)

Structure and magnetization of Co4N thin film

Science.gov (United States)

Pandey, Nidhi; Gupta, Mukul; Gupta, Rachana; Rajput, Parasmani; Stahn, Jochen

2018-02-01

In this work, we studied the local structure and the magnetization of Co4N thin films deposited by a reactive dc magnetron sputtering process. The interstitial incorporation of N atoms in a fcc Co lattice is expected to expand the structure. This expansion yields interesting magnetic properties e.g. a larger magnetic moment (than Co) and a very high value of spin polarization ratio in Co4N . By optimizing the growth conditions, we prepared Co4N film having lattice parameter close to its theoretically predicted value. The N concentration was measured using secondary ion mass spectroscopy. Detailed magnetization measurements using bulk magnetization method and polarized neutron reflectivity confirm that the magnetic moment of Co in Co4N is higher than that of Co.

Magnetic properties and high frequency characteristics of FeCoN thin films

Directory of Open Access Journals (Sweden)

Tae-Jong Hwang

2016-05-01

Full Text Available (Fe65Co35N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2. A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1∼2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

Multiferroic BiFeO{sub 3} thin films: Structural and magnetic characterization

Energy Technology Data Exchange (ETDEWEB)

Ali, Z. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt); Atta, A. [National Center for Radiation Research and Technology (NCRRT), Nasr City, Cairo (Egypt); Abbas, Y. [Physics Department, Faculty of Science, Suez Canal University, Ismailia (Egypt); Sedeek, K.; Adam, A.; Abdeltwab, E. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt)

2015-02-27

BiFeO{sub 3} (BFO) film has been deposited on indium tin oxide (ITO) substrate by a simple sol–gel spin-coating technique. The crystal phase composition, surface morphology, topography and magnetization measurements of the BFO thin film were investigated using grazing incidence X-ray diffraction (GIXRD), scanning electronic microscope (SEM), atomic force microscope and vibrating sample magnetometer, respectively. GIXRD analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section SEM results indicated that compact and homogeneous BFO thin film was deposited on ITO with a thickness of about 180 nm. Moreover, most of A and E-symmetry normal modes of R3c BFO were assigned by Raman spectroscopy. We report here that the pure phase BFO film shows ferromagnetism at room temperature with remarkably high saturation magnetization of 63 kA m{sup −1}. Our results are discussed mainly in correlation with the condition of processing technique and destruction of the spiral spin cycloid at interface layers and grain boundaries. - Highlights: • Multiferroic BiFeO{sub 3} (BFO) thin film was prepared by sol–gel spin-coating method. • BFO film w asdeposited on indium tin oxide substrate with a thickness of 180 nm. • The film exhibits pure rhombohedral perovskite structure. • High saturation magnetization was recorded for our film at room temperature.

Studies of electronic and magnetic properties of LaVO3 thin film

Science.gov (United States)

Jana, Anupam; Karwal, Sharad; Choudhary, R. J.; Phase, D. M.

2018-04-01

We have investigated the electronic and magnetic properties of pulsed laser deposited Mott insulator LaVO3 (LVO) thin film. Structural characterization revels the single phase [00l] oriented LVO thin film. Enhancement of out of plane lattice parameter indicates the compressively strained LVO film. Electron spectroscopic studies demonstrate that vanadium is present in V3+ state. An energy dispersive X-ray spectroscopic study ensures the stoichiometric growth of the film. Very smooth surface is observed in scanning electron micrograph. Colour mapping for elemental distribution reflect the homogeneity of LVO film. The bifurcation between zero-field-cooled and Field-cooled curves clearly points towards the weak ferromagnetic phase presence in compressively strained LVO thin film. A finite value of coercivity at 300 K reflects the possibility of room temperature ferromagnetism of LVO thin film.

Room temperature deposition of perpendicular magnetic anisotropic Co{sub 3}Pt thin films on glass substrate

Energy Technology Data Exchange (ETDEWEB)

Chen, Yu-Shen; Dai, Hong-Yu; Hsu, Yi-Wei [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Ou, Sin-Liang, E-mail: slo@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan (China); Chen, Shi-Wei [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300, Taiwan (China); Lu, Hsi-Chuan; Wang, Sea-Fue [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Sun, An-Cheng, E-mail: acsun@saturn.yzu.edu.tw [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China)

2017-03-01

Co{sub 3}Pt alloy thin films were deposited on the glass substrate at room temperature (RT) and 300 °C, which showed high perpendicular magnetic anisotropy (PMA) and isotropy magnetic behaviors, respectively. Co{sub 3}Pt HCP (0002) planes grew along the substrate plane for the films deposited at RT. The easy axis [0001] was consequently vertical to the substrate surface and obtained the predominant PMA. Large magnetic domains and sharp boundary also supported high PMA in RT-deposited samples. On the other hand, the PMA was significantly decreased with increasing the deposition temperature from RT to 300 °C. Hard HCP(0002) and soft A1(111) co-existed in the film and the magnetic exchanged coupling between these two phases induced isotropy magnetic behavior. In addition, the various thicknesses (t) of the RT-deposited Co{sub 3}Pt films were deposited with different base pressures prior to sputtering. The Kerr rotation loops showed high PMA and out-of-plane squareness (S{sub ⊥}) of ~0.9 were found in low base pressure chamber. Within high base pressure chamber, Co{sub 3}Pt films just show magnetic isotropy behaviors. This study provides a fabrication method for the preparation of high PMA HCP-type Co{sub 3}Pt films on the glass substrate without any underlayer at RT. The results could be the base for future development of RT-deposited magnetic alloy thin film with high PMA. - Highlights: • Fabricated high perpendicular magnetic anisotropy Co{sub 3}Pt thin film on glass substrate. • Prepared HCP Co{sub 3}Pt thin film at room temperature. • The key to enhance the PMA of the Co{sub 3}Pt films. • Thinner film is good to fabricate PMA Co{sub 3}Pt thin films.

Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

Science.gov (United States)

Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

2018-04-25

In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

International Nuclear Information System (INIS)

Zhao Xiaofeng; Wen Dianzhong; Zhuang Cuicui; Cao Jingya; Wang Zhiqiang

2013-01-01

A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed. The magnetic field sensors are fabricated on 〈100〉 orientation high resistivity (ρ > 500 Ω·cm) silicon substrates by using CMOS technology, which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers. The experimental results show that when V DS = 5.0 V, the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length—width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 78 mV/T, 55 mV/T and 34 mV/T, respectively. Under the same conditions, the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers. (semiconductor technology)

High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Sang Woo [Nano-Materials Research Center, Korea Institute of Science and Technology, 39-1 Haweoulgog-dong, Sungbuk-gu, Seoul 136-791 (Korea, Republic of)]. E-mail: swkim@kist.re.kr; Yoon, Chong S. [Division of Advanced Materials Science, Hanyang University, Seoul 133-791 (Korea, Republic of)

2007-09-15

Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization.

High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

International Nuclear Information System (INIS)

Kim, Sang Woo; Yoon, Chong S.

2007-01-01

Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization

Magnetic properties of Cobalt thin films deposited on soft organic layers

Energy Technology Data Exchange (ETDEWEB)

Bergenti, I. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy)]. E-mail: i.bergenti@bo.ismn.cnr.it; Riminucci, A. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy); Arisi, E. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy); Murgia, M. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy); Cavallini, M. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy); Solzi, M. [Dipartimento di Fisica dell' Universita di Parma and CNISM, Parco Area delle Scienze 7/A, Parma 43100 (Italy); Casoli, F. [IMEM-CNR Parco Area delle Scienze 37/A, Parma 43100 (Italy); Dediu, V. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy)

2007-09-15

Magnetic and morphological properties of Cobalt thin films grown by RF sputtering on organic Alq3 layers were investigated by magneto-optical Kerr effect (MOKE) technique and atomic force microscopy (AFM). The AFM images indicate a template growth of Co layers on top of Alq3, the magnetic film 'decorates' the surface of organic material. This peculiar morphology induces a strong uniaxial magnetic anisotropy in the Co films, as detected by MOKE measurements. Results are important for the operation of a new class of devices-vertical organic spin valves.

Final report for EMP instrumentation project DNA IACRO 75-815: magnetic thin film sensors

International Nuclear Information System (INIS)

Hsieh, E.J.; Miller, D.E.; Vindelov, K.E.; Brown, T.G.

1975-01-01

The magnetic thin film current sensor/recorder is a passive device which responds to the peak current and pulse shape of a transient event. The transient current information becomes a permanent record on the film. The thin film device is small, low mass and reusable. It has been proven to be fast (less than 1/2 nanosecond response), radiation hard and applicable to peak current measurement of both CW and pulsed signals. The sensors were initially developed at LLL for pulse-energy measurement on exploding wires. Later the Defense Nuclear Agency sponsored the present project to develop the magnetic thin film devices as EMP diagnostic tools. The Air Force Weapons Lab supported the work to test the field capabilities of the thin film devices at ARES test facility, Kirtland AFB. Sandia Lab is now using a new version of the thin film sensors to monitor the transient current induced by intense radiation in their hybrid microcircuits. Also, a field test has been planned with Naval Electronics Laboratory Center where the thin film sensors are to be used to measure peak CW current caused by rf radiation. Research results are summarized

Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

International Nuclear Information System (INIS)

Watanabe, S.

1984-01-01

The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

The rotational hysteresis losses in thin films with unidirectional magnetic anisotropy

Science.gov (United States)

Mucha, J. M.; Vatskichev, L.; Vatskicheva, M.

1992-03-01

Using the Planar Hall Effect (PHE) the rotational hysteresis losses in NiFeGe thin magnetic films were measured. The calculation of the critical field for magnetization and rotational hysteresis losses based on extended Stoner-Wohlfarth theory including an exchange magnetic field is given.

Effect of magnetization boundary condition on cavity magnon polariton of YIG thin film

Science.gov (United States)

Jiang, H. H.; Xiao, Y.; Hu, C. M.; Guo, H.; Xia, K.

2018-06-01

Motivated by recent studies of cavity magnon polariton (CMP), we extended a previous theoretical work to generalize microwave transmission calculation with various magnetization boundary condition of YIG thin film embedded in cavity. It is found that numerical implementation given in this paper can be easily applied to other magnetization boundary condition and extended to magnetic multilayers. Numerical results show that ferromagnetic resonance mode of microwave transmission spectrum, which is absent in previous calculation, can be recovered by altering the pinning condition of surface spins. The demonstrated reliability of our theory opens attractive perspectives for studying CMP of thin film with complicated surface magnetization distribution and magnetic multilayers.

Magnetic properties of amorphous Tb-Fe thin films with an artificially layered structure

International Nuclear Information System (INIS)

Sato, N.

1986-01-01

An alternating terbium-iron (Tb-Fe) multilayer structure artificially made in amorphous Tb-Fe thin films gives rise to excellent magnetic properties of large perpendicular uniaxial anisotropy, large saturation magnetization, and large coercivity over a wide range of Tb composition in the films. The films are superior to amorphous Tb-Fe alloy thin films, especially when they are piled up with a monatomic layer of Tb and several atomic layers of Fe in an alternating fashion. Small-angle x-ray diffraction analysis confirmed the layering of monatomic layers of Tb and Fe, where the periodicity of the layers was found to be about 5.9 A. Direct evidence for an artificially layered structure was obtained by transmission electron microscopic and Auger electron spectroscopic observations. Together with magnetic measurements of hysteresis loops and torque curves, it has been concluded that the most important origin of the large magnetic uniaxial anisotropy can be attributed to the Tb-Fe pairs aligned perpendicular to the films

Temperature dependence of dynamical permeability characterization of magnetic thin films using shorted microstrip line probe

International Nuclear Information System (INIS)

Li, Xiling; Li, Chengyi; Chai, Guozhi

2017-01-01

A temperature dependence microwave permeability characterization system of magnetic thin film up to 10 GHz is designed and fabricated. This system can be used at temperatures ranging from room temperature to 200 °C, and is based on a shorted microstrip probe, which is made by microwave printed circuit board. Without contacting the magnetic thin films to the probe, the microwave permeability of the film can be detected without any limitations of sample size and with almost the same accuracy, as shown by comparison with the results obtained from a shorted microstrip transmission-line fixture. The complex permeability can be deduced by an analytical approach from the measured reflection coefficient of a strip line ( S 11 ) with and without a ferromagnetic film material on it. The procedures are the same with the shorted microstrip transmission-line method. The microwave permeability of an oblique deposited CoZr thin film was investigated with this probe. The results show that the room temperature dynamic permeability of the CoZr film is in good agreement with the results obtained from the established short-circuited microstrip perturbation method. The temperature dependence permeability results fit well with the Landau–Lifshitz–Gilbert equation. Development of the temperature-dependent measurement of the magnetic properties of magnetic thin film may be useful for the high-frequency application of magnetic devices at high temperatures. (paper)

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Pramanik, Tanmoy, E-mail: pramanik.tanmoy@utexas.edu; Roy, Anupam, E-mail: anupam@austin.utexas.edu; Dey, Rik, E-mail: rikdey@utexas.edu; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C.P.; Hsieh, Cheng-Chih; Banerjee, Sanjay K.

2017-09-01

Highlights: • Perpendicular magnetic anisotropy in epitaxial Cr{sub 2}Te{sub 3} has been investigated. • Presence of a relatively strong second order anisotropy contribution is observed. • Magnetization reversal is explained quantitatively using a 1D defect model. • Relative roles of nucleation and pinning in magnetization reversal are discussed. • Domain structures and switching process are visualized by micromagnetic simulation. - Abstract: We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

Stress analysis, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

Energy Technology Data Exchange (ETDEWEB)

Annadurai, A. [Department of Physics, PSG College of Technology, Coimbatore 641004 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.in [Defense Metallurgical Research Laboratory, Hyderabad 500058 (India); Prabahar, K.; Kumar, Atul [Defense Metallurgical Research Laboratory, Hyderabad 500058 (India); Kannan, M.D.; Jayakumar, S. [Department of Physics, PSG College of Technology, Coimbatore 641004 (India)

2011-11-15

The residual stress instituted in Ni-Mn-Ga thin films during deposition is a key parameter influencing their shape memory applications by affecting its structural and magnetic properties. A series of Ni-Mn-Ga thin films were prepared by dc magnetron sputtering on Si(1 0 0) and glass substrates at four different sputtering powers of 25, 45, 75 and 100 W for systematic investigation of the residual stress and its effect on structure and magnetic properties. The residual stresses in thin films were characterized by a laser scanning technique. The as-deposited films were annealed at 600 deg. C for 1 h in vacuum for structural and magnetic ordering. The compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing. The annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties. It was found that the increase of sputtering power induced coarsening in thin films. Typical saturation magnetization and coercivity values were found to be 330 emu/cm{sup 3} and 215 Oe, respectively. The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature. - Highlights: > Compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing. > Annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties. > The highest Curie transition in the films was observed at 365 K. > The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature.

Temperature dependence of magnetically dead layers in ferromagnetic thin-films

Directory of Open Access Journals (Sweden)

M. Tokaç

2017-11-01

Full Text Available Polarized neutron reflectometry has been used to study interface magnetism and magnetic dead layers in model amorphous CoFeB:Ta alloy thin-film multilayers with Curie temperatures tuned to be below room-temperature. This allows temperature dependent variations in the effective magnetic thickness of the film to be determined at temperatures that are a significant fraction of the Curie temperature, which cannot be achieved in the material systems used for spintronic devices. In addition to variation in the effective magnetic thickness due to compositional grading at the interface with the tantalum capping layer, the key finding is that at the interface between ferromagnetic film and GaAs(001 substrate local interfacial alloying creates an additional magnetic dead-layer. The thickness of this magnetic dead-layer is temperature dependent, which may have significant implications for elevated-temperature operation of hybrid ferromagnetic metal-semiconductor spintronic devices.

Magnetic Properties of FeNi-Based Thin Film Materials with Different Additives

Directory of Open Access Journals (Sweden)

Cai Liang

2014-07-01

Full Text Available This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B.

Magnetic properties of FeNi-based thin film materials with different additives

KAUST Repository

Liang, C.

2014-07-04

This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B. 2014 by the authors.

Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

Energy Technology Data Exchange (ETDEWEB)

Kumar, S. Vinodh; Pandyan, R. Kodi; Mahendran, M., E-mail: manickam-mahendran@tce.edu, E-mail: perialangulam@gmail.com [Smart Materials Lab, Department of Physics, Thiagarajar College of Engineering, Madurai – 625 015 (India); Raja, M. Manivel [Defence Metallurgical Research Laboratory, Hyderabad – 500 058 (India); Pandi, R. Senthur [School of Advanced Sciences, VIT University, Vellore – 632 014 (India)

2016-05-23

Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L1{sub 2} cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively. At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.

Phase formation, thermal stability and magnetic moment of cobalt nitride thin films

Directory of Open Access Journals (Sweden)

Rachana Gupta

2015-09-01

Full Text Available Cobalt nitride (Co-N thin films prepared using a reactive magnetron sputtering process are studied in this work. During the thin film deposition process, the relative nitrogen gas flow (RN2 was varied. As RN2 increases, Co(N, Co4N, Co3N and CoN phases are formed. An incremental increase in RN2, after emergence of Co4N phase at RN2 = 10%, results in a linear increase of the lattice constant (a of Co4N. For RN2 = 30%, a maximizes and becomes comparable to its theoretical value. An expansion in a of Co4N, results in an enhancement of the magnetic moment, to the extent that it becomes even larger than pure Co. Such larger than pure metal magnetic moment for tetra-metal nitrides (M4N have been theoretically predicted. Incorporation of N atoms in M4N configuration results in an expansion of a (relative to pure metal and enhances the itinerary of conduction band electrons leading to larger than pure metal magnetic moment for M4N compounds. Though a higher (than pure Fe magnetic moment for Fe4N thin films has been evidenced experimentally, higher (than pure Co magnetic moment is evidenced in this work.

Object representation and magnetic moments in thin alkali films

Science.gov (United States)

Garrett, Douglas C.

2008-10-01

This thesis is broken into two parts a computer vision part and a solid state physics part. In the computer vision part of the thesis (chapters 1 through 5), the concept of an architecture is discussed with a review of what is known about the brain's visual architecture as it applies to object representation. With this in mind we review the two main types of architectures that are used in computer vision for object representation. A specific object representation is then implemented and optimized to solve a problem in object tracking. This representation is then used to derive the fiducial points of a face using two distinct methods. One using evolutionary algorithms and another by a Bayesian analysis of the feature responses drawn from a gallery of faces. The evolved fiducial representation is tested as a facial detection system. It is shown that the Bayesian analysis of facial images gives an entropy measure that can be used to further improve detection results in the facial detection system. In addition, two similarity metrics are explored in the context of facial detection. It is found that a normalized vector dot product substantially outperforms the Euclidean distance measure. The solid state part of the thesis is composed of two self contained chapters. An effort has been made to reduce the redundancies between the material but some will necessarily remain (i.e., short descriptions of the experimental setup). Both chapters deal with the phenomenon of magnetism of atomic impurities in and on thin metal host films. The important difference between the chapters, besides the results, lies in the experimental technique used to measure the magnetism. In chapter 6, thin films of Pb are covered in situ with sub monolayers of V, Mo and Co in the range between 0.01 and 1 monolayers. If the surface impurities are magnetic they will reduce the superconducting transition temperature of the Pb film. From the reduction of Tc the magnetic dephasing rate of the surface

Ferromagnetic resonance linewidth and damping in perpendicular-anisotropy magnetic multilayers thin films

Science.gov (United States)

Beaujour, Jean-Marc

2010-03-01

Transition metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and permalloy (NiFe) thin films. We have conducted systematic studies of a variety of thin film materials with perpendicular magnetic anisotropy to investigate the origin of the enhanced FMR linewidths, including Ni/Co and CoFeB/Co/Ni multilayers. In Ni/Co multilayers the PMA was systematically reduced by irradiation with Helium ions, leading to a transition from out-of-plane to in-plane easy axis with increasing He ion fluence [1,2]. The FMR linewidth depends linearly on frequency for perpendicular applied fields and increases significantly when the magnetization is rotated into the film plane with an applied in-plane magnetic field. Irradiation of the film with Helium ions decreases the PMA and the distribution of PMA parameters, leading to a large reduction in the FMR linewidth for in-plane magnetization. These results suggest that fluctuations in the PMA lead to a large two magnon scattering contribution to the linewidth for in-plane magnetization and establish that the Gilbert damping is enhanced in such materials (α˜0.04, compared to α˜0.002 for pure Fe) [2]. We compare these results to those on CoFeB/Co/Ni and published results on other thin film materials with PMA [e.g., Ref. 3]. [1] D. Stanescu et al., J. Appl. Phys. 103, 07B529 (2008). [2] J-M. L. Beaujour, D. Ravelosona, I. Tudosa, E. Fullerton, and A. D. Kent, Phys. Rev. B RC 80, 180415 (2009). [3] N. Mo, J. Hohlfeld, M. ulIslam, C. S. Brown, E. Girt, P. Krivosik, W. Tong, A. Rebel, and C. E. Patton, Appl. Phys. Lett. 92, 022506 (2008). *Research done in collaboration with: A. D. Kent, New York University, D. Ravelosona, Institut d'Electronique Fondamentale, UMR CNRS 8622, Universit'e Paris Sud, E. E. Fullerton, Center for Magnetic Recording Research, UCSD, and supported by NSF

Structural and magnetic properties of pure and Cu doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam –603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Pure and Cu (7 at.%) doped In{sub 2}O{sub 3} thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In{sub 2}O{sub 3} thin films showed ferromagnetism at room temperature. The Cu doped In{sub 2}O{sub 3} thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm{sup 3}, 245 G and 5.54 emu/cm{sup 3}, respectively.

Artificially controlled stress anisotropy and magnetic properties of FeTaN thin films

International Nuclear Information System (INIS)

Deng, H.; Jarratt, J.D.; Minor, M.K.; Barnard, J.A.

1997-01-01

This article presents a new method of investigating internal stress effects on thin film magnetic properties, in this case magnetically soft FeTaN sputtered films. The FeTaN films were deposited on a series of oxidized silicon (111) substrates prestressed to different degrees. During sputtering all the deposition conditions were kept exactly the same for all the samples. However, anisotropic stresses with different amplitudes are systematically introduced into the films when the prestressed wafers were released. In this way, FeTaN films with compressive stress varying from 80 to 608 MPa are produced. We found that the saturation magnetostriction (λ s ), anisotropy field (H k ), initial permeability (μ i ) as well as easy axis orientation of FeTaN thin films are strongly affected by the induced stress anisotropy. A stress ratio concept is proposed as a measure of the degree of the stress anisotropy. Models for easy-hard axis switching induced by stress for magnetic films with positive magnetostriction are discussed. copyright 1997 American Institute of Physics

Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

Energy Technology Data Exchange (ETDEWEB)

Guiffard, B.; Seveno, R. [Universite de Nantes, Lunam Universite, IETR UMR CNRS 6164, Nantes (France)

2014-07-10

In this study, we report the magnetically induced electric field E{sub 3} in Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3} (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B{sub ac} at 45 kHz) and static magnetic induction (B{sub dc}) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B{sub dc} - Δ vertical stroke E{sub 3} vertical stroke ΔB{sub dc} - is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B{sub ac} and B{sub dc} induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E{sub 3} versus B{sub dc} could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of α = vertical stroke E{sub 3} vertical stroke /B{sub ac} = 3.55 V/cm Oe under B{sub dc} = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems. (orig.)

Magnetoelectric properties of magnetic/ferroelectric multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Hwang, Sung-Ok; Eum, You-Jeong; Koo, Chang-Young; Lee, Hee-Young [Yeungnam University, Gyeongsan (Korea, Republic of); Park, Jung-Min [Osaka University, Osaka (Japan); Ryu, Jung-Ho [Korea Institute of Materials Science, Changwon (Korea, Republic of)

2014-07-15

Magnetic/ferroelectric multilayer thin films using PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) and two different magnetic materials, i.e., Terfenol-D and CuFe{sub 2}O{sub 4} (CuFO) layers, were fabricated, and their magnetoelectric (ME) coupling behavior was investigated. The PZT layer was first coated onto Pt/Ti/SiO{sub 2}/Si substrate by sol-gel spin coating method. Pt layer, which served as an electrode and a diffusion barrier, was grown on the PZT layer by using the ion-beam sputtering method. The ME voltage coefficients were calculated from the ME voltage data measured utilizing a magnetoelectric test system. The Terfenol-D/Pt/PZT films were found to show a higher in-plane ME voltage coefficient than that the CuFO/Pt/PZT films due primarily to the higher magnetostriction coefficient of Terfenol-D.

Collision-Free Structure Using Thin-Film Magnet For Electrostatic Energy Harvester

International Nuclear Information System (INIS)

Yoshii, S; Yamaguchi, K; Fujita, T; Kanda, K; Maenaka, K

2016-01-01

This paper proposes collision-free structure using NdFeB thin-film magnet for vibration energy harvesters. By using stripe shaped NdFeB magnet array on the Si MEMS structure, we finally obtained 3 mN of magnetic repulsive force on 8 × 8 mm 2 specimen with 40 μm air-gap. (paper)

Collision-Free Structure Using Thin-Film Magnet For Electrostatic Energy Harvester

Science.gov (United States)

Yoshii, S.; Yamaguchi, K.; Fujita, T.; Kanda, K.; Maenaka, K.

2016-11-01

This paper proposes collision-free structure using NdFeB thin-film magnet for vibration energy harvesters. By using stripe shaped NdFeB magnet array on the Si MEMS structure, we finally obtained 3 mN of magnetic repulsive force on 8 × 8 mm2 specimen with 40 μm air-gap.

Magnetic and structural properties of ion beam sputtered Fe–Zr–Nb–B–Cu thin films

International Nuclear Information System (INIS)

Modak, S.S.; Kane, S.N.; Gupta, A.; Mazaleyrat, F.; LoBue, M.; Coisson, M.; Celegato, F.; Tiberto, P.; Vinai, F.

2012-01-01

Magnetic and structural properties of Fe–Zr–Nb–B–Cu thin films, prepared by ion beam sputtering on silicon substrates by using a target made up of amorphous ribbons of nominal composition Fe 84 Zr 3.5 Nb 3.5 B 8 Cu 1 , are reported. As-deposited thin film samples exhibit an in-plane uniaxial anisotropy, which can be ascribed to the preparation technique and the coupling of quenched-in internal stresses. Structural measurements indicate no significant variation of the grain size with thickness and with the annealing temperature. Increase in surface irregularities with annealing temperature and oxidation results in aggregates that would act as pinning centers, affecting the magnetic properties leading to magnetic hardening of the specimens. The role of the magnetic anisotropy is thoroughly discussed with the help of magnetic and ferromagnetic resonance measurements. - Highlights: ►Ion beam sputtered Fe–Zr–Nb–B–Cu thin films of different thickness are prepared. ►Films exhibit in-plane uniaxial anisotropy, which reduces with thermal treatments. ►Increased surface roughness leads to wall pinning, increasing the coercive field.

NMR characterization of thin films

Science.gov (United States)

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

Science.gov (United States)

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Closed-loop model: An optimization of integrated thin-film magnetic devices

Energy Technology Data Exchange (ETDEWEB)

El-Ghazaly, Amal, E-mail: amale@stanford.edu [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Sato, Noriyuki [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); White, Robert M. [Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Wang, Shan X. [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States)

2017-06-15

Highlights: • An analytical model for inductance of thin-film magnetic devices was developed. • Different device topologies and magnetic permeabilities were addressed. • Inductance of various topologies were calculated and compared with simulation. • The model predicts simulated values with excellent accuracy. - Abstract: A generic analytical model has been developed to fully describe the flux closure through magnetic inductors. The model was applied to multiple device topologies including solenoidal single return path and dual return path inductors as well as spiral magnetic inductors for a variety of permeabilities and dimensions. The calculated inductance values from the analytical model were compared with simulated results for each of the analyzed device topologies and found to agree within 0.1 nH for the range of typical thin-film magnetic permeabilities (∼10{sup 2} to 10{sup 3}). Furthermore, the model can be used to evaluate behavior in other integrated or discrete magnetic devices with either non-isotropic or isotropic permeability and used to produce more efficient device designs in the future.

Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

Science.gov (United States)

Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

2009-11-09

Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

2015-06-24

Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

Structure and magnetization in CoPd thin films and nanocontacts

International Nuclear Information System (INIS)

Morgan, Caitlin; Schmalbuch, Klaus; García-Sánchez, Felipe; Schneider, Claus M.; Meyer, Carola

2013-01-01

We present results showing the structural and magnetic properties of MBE-grown extended films and nanostructured elements of various CoPd alloys. X-ray diffraction studies show that the thin films are polycrystalline, yet exhibit a strong preferential growth orientation along the (111) direction. Magnetic force microscopy and SQUID are used to gain an understanding of the magnetic behavior of the CoPd system with respect to competing anisotropy contributions, based on temperature-dependent SQUID data, collected between 4 and 300 K. The idea and potential implications of using CoPd as a contact material to achieve spin injection in carbon nanotube-based devices is discussed. - Highlights: ► In-plane magnetization of CoPd films increases with added Co content. ► Quasi single-domain nanostructures of Co 50 Pd 50 exhibit almost no OOP component. ► Nanostructures exhibit decrease in coercive field with initial temperature decrease. ► Magnetic behavior is influenced by the anti-FM oxide and magnetoelastic effect.

Polarization enhancement and ferroelectric switching enabled by interacting magnetic structures in DyMnO3 thin films

KAUST Repository

Lu, Chengliang

2013-12-02

The mutual controls of ferroelectricity and magnetism are stepping towards practical applications proposed for quite a few promising devices in which multiferroic thin films are involved. Although ferroelectricity stemming from specific spiral spin ordering has been reported in highly distorted bulk perovskite manganites, the existence of magnetically induced ferroelectricity in the corresponding thin films remains an unresolved issue, which unfortunately halts this step. In this work, we report magnetically induced electric polarization and its remarkable response to magnetic field (an enhancement of ?800% upon a field of 2 Tesla at 2 K) in DyMnO3 thin films grown on Nb-SrTiO3 substrates. Accompanying with the large polarization enhancement, the ferroelectric coercivity corresponding to the magnetic chirality switching field is significantly increased. A picture based on coupled multicomponent magnetic structures is proposed to understand these features. Moreover, different magnetic anisotropy related to strain-suppressed GdFeO 3-type distortion and Jahn-Teller effect is identified in the films.

Effect of tungsten (W) on structural and magnetic properties of electroplated NiFe thin films for MEMS applications

Science.gov (United States)

Kannan, R.; Devaki, P.; Premkumar, P. S.; Selvambikai, M.

2018-04-01

Electrodeposition of nanocrystalline NiFe and NiFeW thin films were carried out from ammonium citrate bath at a constant current density and controlled pH of 8 by varying the bath temperature from 40 °C to 70 °C. The surface morphology and chemical composition of the electrodeposited NiFe and NiFeW soft magnetic thin films were studied by using SEM and EDAX. The SEM micrographs of the films coated at higher electrodeposited bath temperature have no micro cracks and also the films have more uniform surface morphology. The existence of crystalline nature of the coated films were analysed by XRD. The presence of predominant peaks in x-ray diffraction pattern (compared with JCPDS data) reveal that the average crystalline size was in the order of few tens of nano meters. The magnetic properties such as coercivity, saturation magnetization and magnetic flux density have been calculated from vibrating sample magnetometer analysis. The VSM result shows that the NiFeW thin film synthesised at 70 °C exhibit the lower coercivity with higher saturation magnetization. The hardness and adhesion of the electroplated films have been investigated. Reasons for variation in magnetic properties and structural characteristics are also discussed. The electroplated NiFe and NiFeW thin films can be used for Micro Electro Mechanical System (MEMS) applications due to their excellent soft magnetic behaviour.

Influence of Magnetic Field on Electric Charge Transport in Holomiun Thin Films at Low Temperatures

Directory of Open Access Journals (Sweden)

Jan Dudas

2005-01-01

Full Text Available Holmium thin films were prepared by evaporation in ultrahigh vacuum (UHV and high precision electrical resistance measurements were performed on them as well as on holomium bulk sample in the wide temperature range from 4,2 K up to the room temperature. Electric charge transport is profoundly influenced by the magnetic structure at low temperatures and a "knee-like" resistance anomaly was observed near the transportation from paramagnetic state to basal-plane spiral structure in bulk with the Neel temperature TN=128,9 K and below ~ 122 K in thin Ho films in a thickness range from 98 nm to 215 nm. Unexpected resistance minimum at ~ 9 K and a slope´s charge of the R vs. T curve near ~ 170 K was observed in 215 nm thin film. Application of magnetic field parallel to the substrate and thin film plane for temperatures below ~ 150 K caused the decrease of resistence value with increasing magnetic flux density. Increasing suppression of the TN value up to ~ 5 K with increasing flux density value up to 5 T was observed in Ho films. 

Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin Films

NARCIS (Netherlands)

Zhang, W.; Jiang, S.; Wong, P.K.J.; Sun, Li; Wang, Y.K.; Wang, Kai; de Jong, Machiel Pieter; van der Wiel, Wilfred Gerard; van der Laan, G.; Zhai, Y.

2014-01-01

By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ∼6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd

Magnetism and deformation of epitaxial Pd and Rh thin films

Czech Academy of Sciences Publication Activity Database

Káňa, Tomáš; Hüger, E.; Legut, D.; Čák, M.; Šob, Mojmír

2016-01-01

Roč. 93, č. 13 (2016), č. článku Art. number 134422. ISSN 2469-9950 R&D Projects: GA MŠk(CZ) LQ1601; GA ČR(CZ) GA16-24711S Institutional support: RVO:68081723 Keywords : ab initio calculations * magnetism * palladium * rhodium * thin films * deformation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

Critical behaviour of magnetic thin film with Heisenberg spin-S model

International Nuclear Information System (INIS)

Masrour, R.; Hamedoun, M.; Bouslykhane, K.; Hourmatallah, A.; Benzakour, N.; Benyoussef, A.

2009-01-01

The magnetic properties of a ferromagnetic thin film of face centered cubic (FCC) lattice with Heisenberg spin-S are examined using the high-temperature series expansions technique extrapolated with Pade approximations method. The critical reduced temperature of the system τ c is studied as function of thickness of the film and the exchange interactions in the bulk, and within the surfaces J b , J s and J perpendicular respectively. A critical value of surface exchange interaction above which surface magnetism appears is obtained. The dependence of the reduced critical temperature on the film thickness L has been investigated.

Microwave study of magnetic field penetration parallel to thin niobium films

International Nuclear Information System (INIS)

Grbic, M.S.; Janjusevic, D.; Pozek, M.; Dulcic, A.; Wagner, T.

2007-01-01

Complex conductivity of high quality niobium thin films has been investigated by microwave technique in parallel static magnetic field. For the 40 nm thick film no vortices can be formed and the microwave penetration is defined by the strength of the superconducting order parameter which varies with the applied magnetic field. 160 nm thick measured film allows formation of two rows of vortices. Microwave dissipiation is dominated by dynamics of vortices which is strongly affected by size effects. Results have been compared with the generalised models of complex conductivity for low-dimensional superconductor in mixed state following earlier considerations by other authors

Femtosecond laser spectroscopy of spins: Magnetization dynamics in thin magnetic films with spatio-temporal resolution

International Nuclear Information System (INIS)

Carpene, E.; Mancini, E.; Dallera, C.; Puppin, E.; De Silvestri, S.

2010-01-01

Based on the Magneto-Optical Kerr Effect (MOKE), we have developed an experimental set-up that allows us to fully characterize the magnetization dynamics in thin magnetic films by measuring all three real space components of the magnetization vector M. By means of the pump-probe technique it is possible to extract the time dependence of each individual projection with sub-picosecond resolution. This method has been exploited to investigate the temporal evolution of the magnetization (modulus and orientation) induced by an ultrashort laser pulse in thin epitaxial iron films. According to our results, we deduced that the initial, sub-picosecond demagnetization is established at the electronic level through electron-magnon excitations. The subsequent dynamics is characterized by a precessional motion on the 100 ps time scale, around an effective, time-dependent magnetic field. Following the full dynamics of M, the temporal evolution of the magneto-crystalline anisotropy constant can be unambiguously determined, providing the experimental evidence that the precession is triggered by the rapid, optically-induced misalignment between the magnetization vector and the effective magnetic field. These results suggest a possible pathway toward the ultrarapid switching of the magnetization.

Electronic and magnetic properties of TTF and TCNQ covered Co thin films

Energy Technology Data Exchange (ETDEWEB)

Geijn, Elmer van, E-mail: e.vangeijn@utwente.nl; Wang, Kai; Jong, Michel P. de [NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2016-05-07

Interfacial effects like orbital hybridization and charge transfer strongly influence the transfer of spins from ferromagnetic metals to organic semiconductors and can lead to the formation of interfacial states with distinct magnetic properties. The changes in the electronic and magnetic properties of a thin Co film upon adsorption of a layer of either the molecular organic electron donor tetrathiafulvalene (TTF) or the acceptor tetracyanoquinodimethane (TCNQ) have been investigated by X-ray absorption spectroscopy and X-ray magnetic circular dichroism using synchrotron radiation. Clear differences between the spectra of the adsorbed molecules and the neutral molecules show the hybridization of the molecular orbitals with the Co interface. Deposition of both organic materials leads to a small increase of the ratio of the orbital magnetic moment to the spin magnetic moment of the Co atoms at the interface. The main effect of overlayer deposition is a modification of the magnetic hysteresis of the Co film: The TCNQ slightly reduces the coercivity of the Co, while the TTF increases the coercivity by a factor of ∼1.5. These complementary effects of either a molecular organic electron donor or acceptor on the interfacial properties of a metal ferromagnetic thin film are a promising result for the controlled modification of the magnetic structure of hybrid interfaces.

Handbook of thin film technology

CERN Document Server

Frey, Hartmut

2015-01-01

“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

Temperature dependence of LRE-HRE-TM thin films

Science.gov (United States)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Modification of magnetoresistance and magnetic properties of Ni thin films by adding Dy interlayer

Science.gov (United States)

Vorobiov, S. I.; Shabelnyk, T. M.; Shutylieva, O. V.; Pazukha, I. M.; Chornous, A. M.

2018-03-01

The paper reports the influence of dysprosium (Dy) interlayer addition on structure, magnetoresistance and magnetic properties of nickel (Ni) thin films. Trilayer film systems Ni/Dy/Ni have been prepared by alternate electron-beam evaporation. It is demonstrated that all as-prepared and annealed Ni thin films have face-centered cubic structure. The composition of the samples after addition of the Dy interlayer corresponds to the combination of face-centered cubic (Ni) and hexagonal close-packed (Dy) structures. The structure of Ni/Dy/Ni film systems changes from amorphous to polycrystalline when Dy interlayer thickness (t Dy) is more than 15 nm. The value of magnetoresistance increases with the adding the Dy interlayer in both longitudinal and transverse geometries, meanwhile the anisotropic character of magnetoresistance field dependences retained. The saturation and reversal magnetizations are reduced with the increasing of the Dy thickness interlayer, while the coercivity takes the minimum value at t Dy = 15 nm. The following increasing of t Dy leads to increasing of coercivity near to three times. This result indicates the influence of the crystal structure on the magnetic properties of Ni thin films at adding Dy interlayer.

Growth and magnetic properties of multiferroic LaxBi1-xMnO3 thin films

Science.gov (United States)

Gajek, M.; Bibes, M.; Wyczisk, F.; Varela, M.; Fontcuberta, J.; Barthélémy, A.

2007-05-01

A comparative study of LaxBi1-xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1-xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions.

Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

International Nuclear Information System (INIS)

Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

2011-01-01

Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

The phase diagrams of a ferromagnetic thin film in a random magnetic field

Energy Technology Data Exchange (ETDEWEB)

Zaim, N.; Zaim, A., E-mail: ah_zaim@yahoo.fr; Kerouad, M., E-mail: m.kerouad@fs-umi.ac.ma

2016-10-07

In this paper, the magnetic properties and the phase diagrams of a ferromagnetic thin film with a thickness N in a random magnetic field (RMF) are investigated by using the Monte Carlo simulation technique based on the Metropolis algorithm. The effects of the RMF and the surface exchange interaction on the critical behavior are studied. A variety of multicritical points such as tricritical points, isolated critical points, and triple points are obtained. It is also found that the double reentrant phenomenon can appear for appropriate values of the system parameters. - Highlights: • Phase diagrams of a ferromagnetic thin film are examined by the Monte Carlo simulation. • The effect of the random magnetic field on the magnetic properties is studied. • Different types of the phase diagrams are obtained. • The dependence of the magnetization and susceptibility on the temperature are investigated.

Structure and magnetization in CoPd thin films and nanocontacts

Energy Technology Data Exchange (ETDEWEB)

Morgan, Caitlin, E-mail: c.morgan@fz-juelich.de [Peter Gruenberg Institut, Forschungszentrum Juelich (Germany); JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany); Schmalbuch, Klaus [JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany); Physikalisches Institut, RWTH Aachen University, Otto-Blumenthal-Strasse, 52074 Aachen (Germany); Garcia-Sanchez, Felipe [Peter Gruenberg Institut, Forschungszentrum Juelich (Germany); JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany); Schneider, Claus M. [Peter Gruenberg Institut, Forschungszentrum Juelich (Germany); JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany); Fakultaet f. Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universitaet Duisburg-Essen, D-47048 Duisburg (Germany); Meyer, Carola [Peter Gruenberg Institut, Forschungszentrum Juelich (Germany); JARA Juelich Aachen Research Alliance, 52425 Juelich (Germany)

2013-01-15

We present results showing the structural and magnetic properties of MBE-grown extended films and nanostructured elements of various CoPd alloys. X-ray diffraction studies show that the thin films are polycrystalline, yet exhibit a strong preferential growth orientation along the (111) direction. Magnetic force microscopy and SQUID are used to gain an understanding of the magnetic behavior of the CoPd system with respect to competing anisotropy contributions, based on temperature-dependent SQUID data, collected between 4 and 300 K. The idea and potential implications of using CoPd as a contact material to achieve spin injection in carbon nanotube-based devices is discussed. - Highlights: Black-Right-Pointing-Pointer In-plane magnetization of CoPd films increases with added Co content. Black-Right-Pointing-Pointer Quasi single-domain nanostructures of Co{sub 50}Pd{sub 50} exhibit almost no OOP component. Black-Right-Pointing-Pointer Nanostructures exhibit decrease in coercive field with initial temperature decrease. Black-Right-Pointing-Pointer Magnetic behavior is influenced by the anti-FM oxide and magnetoelastic effect.

Magnetic coupling mechanisms in particle/thin film composite systems

Directory of Open Access Journals (Sweden)

Giovanni A. Badini Confalonieri

2010-12-01

Full Text Available Magnetic γ-Fe2O3 nanoparticles with a mean diameter of 20 nm and size distribution of 7% were chemically synthesized and spin-coated on top of a Si-substrate. As a result, the particles self-assembled into a monolayer with hexagonal close-packed order. Subsequently, the nanoparticle array was coated with a Co layer of 20 nm thickness. The magnetic properties of this composite nanoparticle/thin film system were investigated by magnetometry and related to high-resolution transmission electron microscopy studies. Herein three systems were compared: i.e. a reference sample with only the particle monolayer, a composite system where the particle array was ion-milled prior to the deposition of a thin Co film on top, and a similar composite system but without ion-milling. The nanoparticle array showed a collective super-spin behavior due to dipolar interparticle coupling. In the composite system, we observed a decoupling into two nanoparticle subsystems. In the ion-milled system, the nanoparticle layer served as a magnetic flux guide as observed by magnetic force microscopy. Moreover, an exchange bias effect was found, which is likely to be due to oxygen exchange between the iron oxide and the Co layer, and thus forming of an antiferromagnetic CoO layer at the γ-Fe2O3/Co interface.

Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields

Directory of Open Access Journals (Sweden)

Savio Fabretti

2014-03-01

Full Text Available We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T = 0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.

Electrical and magnetic properties of electrodeposited nickel incorporated diamond-like carbon thin films

Energy Technology Data Exchange (ETDEWEB)

Pandey, B., E-mail: pandey.beauty@yahoo.com [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Das, D. [UGC-DAE CSR, Sector III/LB-8, Bidhan Nagar, Kolkata 700098 (India); Kar, A.K. [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India)

2015-05-15

Highlights: • Electrical and magnetic properties of DLC and Ni-DLC thin films are studied. • The ohmicity and conductivity of DLC films rise with nickel addition. • The ohmicity of Ni-DLC is enhanced with increase in dilution of electrolyte. • Dielectric loss is high for Ni-DLC and decreases with frequency till 100 kHz. • (m–H) and (m–T) curves of Ni-DLC indicate superparamagnetic behavior. - Abstract: Nanocomposite diamond-like carbon (DLC) thin films have been synthesized by incorporating nickel (Ni) nanoparticles in DLC matrix with varying concentration of nickel. DLC and Ni-DLC thin films have been deposited on ITO coated glass substrates employing low voltage electrodeposition method. Electrical properties of the samples were studied by measuring current–voltage characteristics and dielectric properties. The current approaches toward an ohmic behavior with metal addition. This tendency of increasing ohmicity is enhanced with increase in dilution of the electrolyte. The conductivity increases with Ni addition and interestingly it continues to increase with dilution of Ni concentration in the electrolyte in the range of our study. Magnetic properties for DLC and Ni-DLC thin film samples were examined by electron paramagnetic resonance (EPR) measurements and Super Conducting Quantum Interference Device (SQUID) measurements. g-Value for DLC is 2.074, whereas it decreases to 2.055 with Ni addition in the electrolyte. This decrement arises from the increased sp{sup 2} content in DLC matrix. The magnetic moment vs. magnetic field (m–H) curves of Ni-DLC indicate superparamagnetic behavior which may be due to ferromagnetic contribution from the incorporated nickel nanoparticles in the DLC matrix. The ZFC curve of Ni-DLC after the blocking temperature shows a combined contribution of ferromagnetic, superparamagnetic and paramagnetic nature of the materials persisting up to 300 K.

Defect-mediated magnetism of transition metal doped zinc oxide thin films

Science.gov (United States)

Roberts, Bradley Kirk

Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

Magnetic domain observation of FeCo thin films fabricated by alternate monoatomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Ohtsuki, T., E-mail: ohtsuki@spring8.or.jp; Kotsugi, M.; Ohkochi, T. [Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Kojima, T.; Mizuguchi, M.; Takanashi, K. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2014-01-28

FeCo thin films are fabricated by alternate monoatomic layer deposition method on a Cu{sub 3}Au buffer layer, which in-plane lattice constant is very close to the predicted value to obtain a large magnetic anisotropy constant. The variation of the in-plane lattice constant during the deposition process is investigated by reflection high-energy electron diffraction. The magnetic domain images are also observed by a photoelectron emission microscope in order to microscopically understand the magnetic structure. As a result, element-specific magnetic domain images show that Fe and Co magnetic moments align parallel. A series of images obtained with various azimuth reveal that the FeCo thin films show fourfold in-plane magnetic anisotropy along 〈110〉 direction, and that the magnetic domain structure is composed only of 90∘ wall.

Magnetic and electronic properties of SrMnO3 thin films

Science.gov (United States)

Mandal, Arup Kumar; Panchal, Gyanendra; Choudhary, R. J.; Phase, D. M.

2018-05-01

Single phase hexagonal bulk SrMnO3 (SMO) was prepared by solid state route and it was used for depositing thin films by pulsed laser deposition (PLD) technique on single crystalline (100) oriented SrTiO3 (STO) substrate. X-ray diffraction shows that the thin film is deposited in cubic SrMnO3 phase. From X-ray absorption at the Mn L edge we observed the mixed valency of Mn (Mn3+& Mn4+) due to strain induced by the lattice mismatching between SMO and STO. Due to this mixed valency of Mn ion in SMO film, the ferromagnetic nature is observed at lower temperature because of double exchange. After post annealing with very low oxygen partial pressure, magnetic and electronic property of SMO films are effectively modified.

Magnetic properties and microstructure of low ordering temperature L10 FePt thin films

International Nuclear Information System (INIS)

Sun, A.C.; Kuo, P.C.; Chen, S.C.; Chou, C.Y.; Huang, H.L.; Hsu, J.H.

2004-01-01

Polycrystalline Fe 52 Pt 48 alloy thin films were prepared by dc magnetron sputtering on preheated natural-oxidized silicon wafer substrates. The film thickness was varied from 10 to 100 nm. The as-deposited film was encapsulated in a quartz tube and postannealed in vacuum at various temperatures for 1 h, then furnace cooled. It is found that the ordering temperature from as-deposited soft magnetic fcc FePt phase to hard magnetic fct L1 0 FePt phase could be reduced to about 350 deg. C by preheating substrate and furnace cooling treatment. The magnetic properties measurements indicated that the in-plane coercivity of the films was increased rapidly as annealing temperature is increased from 300 to 400 deg. C, but it decreased when the annealing temperature is higher than 400 deg. C. X-ray diffraction analysis shown that the as-deposited FePt thin film was a disorder fcc FePt phase. The magnetic measurement indicated that the transformation of disorder fcc FePt to fct L1 0 FePt phase was started at about 350 deg. C, which is consistent with the analysis of x-ray diffraction patterns. From scanning electron microscopy observation and selected area energy disperse spectrum analysis, the distributions of Fe and Pt elements in the films became nonuniform when the annealing temperature was higher than 500 deg. C due to the formation of the Fe 3 Pt phase. After annealing at 400 deg. C, the in plane coercivity of Fe 52 Pt 48 thin film with film thickness of 100 nm is 10 kOe, M s is 580 emu/cm3, and grain size is about 12 nm

Weak magnetism of Aurivillius-type multiferroic thin films probed by polarized neutron reflectivity

Science.gov (United States)

Zhai, Xiaofang; Grutter, Alexander J.; Yun, Yu; Cui, Zhangzhang; Lu, Yalin

2018-04-01

Unambiguous magnetic characterization of room-temperature multiferroic materials remains challenging due in part to the difficulty of distinguishing their very weak ferromagnetism from magnetic impurity phases and other contaminants. In this study, we used polarized neutron reflectivity to probe the magnetization of B i6FeCoT i3O18 and LaB i5FeCoT i3O18 in their epitaxial thin films while eliminating a variety of impurity contributions. Our results show that LaB i5FeCoT i3O18 exhibits a magnetization of about 0.016 ±0.027 μB/Fe -Co pair at room temperature, while the B i6FeCoT i3O18 thin film only exhibits a weak magnetic moment below room temperature, with a saturation magnetization of 0.049 ±0.015 μB/Fe -Co pair at 50 K. This polarized-neutron-reflectivity study places an upper magnetization limit on the matrix material of the magnetically doped Aurivillius oxides and helps to clarify the true mechanism behind the room-temperature magnetic performance.

Study on optimization of YBCO thin film stack for compact NMR magnets

International Nuclear Information System (INIS)

Kim, S.B.; Kimoto, T.; Hahn, S.; Iwasa, Y.; Voccio, J.; Tomita, M.

2013-01-01

Highlights: ► Stacking methods for compact NMR magnet using YBCO thin films were tested. ► The stacking angles are 0°, 22.5° and 90° against the rolling direction. ► The best spatial field homogeneity was obtained in rotation angle of 22.5°. ► The maximum trapped magnetic fields of 0.4 T was obtained at 77.4 K. ► The maximum trapped magnetic fields of 0.95 T was obtained at 21 K. -- Abstract: A compact high temperature superconducting (HTS) magnet, which consists of a stack of 500 HTS thin film annuli, was constructed and tested. Each thin film annulus, manufactured by the AMSC using the Rolling Assisted Bi-axially Textured Substrate (RABiTS) method, has a square cross-section of 40 mm × 40 mm with a thickness of 80 m. It has a 25-mm center hole created by machining. This paper reports a study on the anisotropic J c issue due to the rolling procedure of the Ni substrate direction and its impact on field homogeneity. Also, three different stacking methods with rotation angles of 22.5°, 90°, and 0° against the rolling direction have been tested to study their impacts on strength, spatial homogeneity, and temporal stability of trapped fields. Finally, the 500-annulus magnet was tested at 21 K under a cryogen-free environment using a GM cryocooler. The spatial field homogeneity and temporal stability were measured at 21 K and compared with those obtained in a bath of liquid nitrogen at 77 K

Influence of the interface on the magnetic properties of NiZn ferrite thin films treated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Jiang, X.D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Guo, D.W. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhang, C.H., E-mail: c.h.zhang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Fan, X.L.; Chai, G.Z. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Xue, D.S., E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2015-09-01

In order to systematically investigate the influence of the interface on the magnetic properties, polycrystalline NiZn ferrite thin films were irradiated with 60 keV proton in the dose range from 5 × 10{sup 12} to 5 × 10{sup 16} ions/cm{sup 2}. A non-destructive approach by proton irradiation was found to finely adjust the magnetic properties of polycrystalline NiZn ferrite thin films such as coercivity, perpendicular magnetic anisotropy as well as the effective g value. The coercivity is about 725 Oe for high proton dose ferrite, which is twice larger than the unirradiated one. The ferromagnetic resonance measurements indicated that perpendicular magnetic anisotropy and the effective g value increase with the irradiation dose. Our finding indicates that all modifications of these magnetic properties were associated with the change of interface due to the diffusion and the stress induced by proton irradiation. The change of the effective g value is a result of lattice expansion and the decrease of the magnetic dipole interaction between the columnar grains. This work provides a feasible way to tailor the magnetic properties of thin films by ion irradiation and promotes investigations for the stability of magnetic thin film devices in space or unclear radiation environments.

Nanomagnetic behavior of fullerene thin films in Earth magnetic field in dark and under polarization light influences.

Science.gov (United States)

Koruga, Djuro; Nikolić, Aleksandra; Mihajlović, Spomenko; Matija, Lidija

2005-10-01

In this paper magnetic fields intensity of C60 thin films of 60 nm and 100 nm thickness under the influence of polarization lights are presented. Two proton magnetometers were used for measurements. Significant change of magnetic field intensity in range from 2.5 nT to 12.3 nT is identified as a difference of dark and polarization lights of 60 nm and 100 nm thin films thickness, respectively. Specific power density of polarization light was 40 mW/cm2. Based on 200 measurement data average value of difference between magnetic intensity of C60 thin films, with 60 nm and 100 nm thickness, after influence of polarization light, were 3.9 nT and 9.9 nT respectively.

Magnetic properties changes of MnAs thin films irradiated with highly charged ions

OpenAIRE

Trassinelli , Martino; Gafton , V.; Eddrief , Mahmoud; Etgens , Victor H.; Hidki , S.; Lacaze , Emmanuelle; Lamour , Emily; Luo , X.; Marangolo , Massimiliano; Merot , Jacques; Prigent , Christophe; Reuschl , Regina; Rozet , Jean-Pierre; Steydli , S.; Vernhet , Dominique

2013-01-01

International audience; We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Prelim...

Tuning of Transport and Magnetic Properties in Epitaxial LaMnO3+δ Thin Films

Directory of Open Access Journals (Sweden)

J. Chen

2014-01-01

Full Text Available The effect of compressive strain on the transport and magnetic properties of epitaxial LaMnO3+δ thin films has been investigated. It is found that the transport and magnetic properties of the LaMnO3+δ thin films grown on the LaAlO3 substrates can be tuned by the compressive strain through varying film thickness. And the insulator-metal transition, charge/orbital ordering transition, and paramagnetic-ferromagnetic transition are suppressed by the compressive strain. Consequently, the related electronic and magnetic transition temperatures decrease with an increase in the compressive strain. The present results can be explained by the strain-controlled lattice deformation and the consequent orbital occupation. It indicates that the lattice degree of freedom is crucial for understanding the transport and magnetic properties of the strongly correlated LaMnO3+δ.

Magnetic and structural study of Cu-doped TiO2 thin films

International Nuclear Information System (INIS)

Torres, C.E. Rodriguez; Golmar, F.; Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H.; Duhalde, S.

2007-01-01

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO 2 thin films were grown by pulsed laser deposition technique on LaAlO 3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO 2 . The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO 2

Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films

Directory of Open Access Journals (Sweden)

M. Stiller

2016-12-01

Full Text Available The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.

Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong

2011-01-01

Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni 0.5 Zn 0.5 Fe 2 O 4 . The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 μm, a saturation magnetization of 150 emu/cm 3 , and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

Bifurcation magnetic resonance in films magnetized along hard magnetization axis

Energy Technology Data Exchange (ETDEWEB)

Vasilevskaya, Tatiana M., E-mail: t_vasilevs@mail.ru [Ulyanovsk State University, Leo Tolstoy 42, 432017 Ulyanovsk (Russian Federation); Sementsov, Dmitriy I.; Shutyi, Anatoliy M. [Ulyanovsk State University, Leo Tolstoy 42, 432017 Ulyanovsk (Russian Federation)

2012-09-15

We study low-frequency ferromagnetic resonance in a thin film magnetized along the hard magnetization axis performing an analysis of magnetization precession dynamics equations and numerical simulation. Two types of films are considered: polycrystalline uniaxial films and single-crystal films with cubic magnetic anisotropy. An additional (bifurcation) resonance initiated by the bistability, i.e. appearance of two closely spaced equilibrium magnetization states is registered. The modification of dynamic modes provoked by variation of the frequency, amplitude, and magnetic bias value of the ac field is studied. Both steady and chaotic magnetization precession modes are registered in the bifurcation resonance range. - Highlights: Black-Right-Pointing-Pointer An additional bifurcation resonance arises in a case of a thin film magnetized along HMA. Black-Right-Pointing-Pointer Bifurcation resonance occurs due to the presence of two closely spaced equilibrium magnetization states. Black-Right-Pointing-Pointer Both regular and chaotic precession modes are realized within bifurcation resonance range. Black-Right-Pointing-Pointer Appearance of dynamic bistability is typical for bifurcation resonance.

Bifurcation magnetic resonance in films magnetized along hard magnetization axis

International Nuclear Information System (INIS)

Vasilevskaya, Tatiana M.; Sementsov, Dmitriy I.; Shutyi, Anatoliy M.

2012-01-01

We study low-frequency ferromagnetic resonance in a thin film magnetized along the hard magnetization axis performing an analysis of magnetization precession dynamics equations and numerical simulation. Two types of films are considered: polycrystalline uniaxial films and single-crystal films with cubic magnetic anisotropy. An additional (bifurcation) resonance initiated by the bistability, i.e. appearance of two closely spaced equilibrium magnetization states is registered. The modification of dynamic modes provoked by variation of the frequency, amplitude, and magnetic bias value of the ac field is studied. Both steady and chaotic magnetization precession modes are registered in the bifurcation resonance range. - Highlights: ► An additional bifurcation resonance arises in a case of a thin film magnetized along HMA. ► Bifurcation resonance occurs due to the presence of two closely spaced equilibrium magnetization states. ► Both regular and chaotic precession modes are realized within bifurcation resonance range. ► Appearance of dynamic bistability is typical for bifurcation resonance.

Observation and manipulation of magnetic domains in sol gel derived thin films of spinel ferrites

Science.gov (United States)

Datar, Ashwini A.; Mathe, Vikas L.

2017-12-01

Thin films of spinel ferrites, namely zinc substituted nickel, cobalt ferrite, and manganese substituted cobalt ferrite, were synthesized using sol-gel derived spin-coating techniques. The films were characterized using x-ray diffraction, field emission scanning electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy techniques for the analysis of structural, morphological and vibrational band transition properties, which confirm the spinel phase formation of the films. The magnetic force microscopy (MFM) technique was used to observe the magnetic domain structure present in the synthesized films. Further, the films were subjected to an external DC magnetic field of 2 kG to orient the magnetic domains and analyzed using an ex situ MFM technique.

Magnetic and exchange bias properties of YCo thin films and IrMn/YCo bilayers

Science.gov (United States)

Venkat Narayana, M.; Manivel Raja, M.; Jammalamadaka, S. Narayana

2018-02-01

We report on the structural and magnetic properties of YCo thin films and IrMn/YCo bilayers. X-ray diffraction infer that all the films are amorphous in nature. Magnetization versus magnetic field measurements reveal room temperature soft ferromagnetism in all the YCo films. Thin films which were grown at 100 W sputter power with growth rates of 0.677, 0.694 and 0.711 Å/sec show better morphology and composition than 50 W (0.333, 0.444 and 0.277 Å/sec) grown films. Perpendicular exchange bias in as deposited bilayers is evident for IrMn/YCo bilayers. Exchange bias (EB) decreases in case of in plane measurements and enhances for out of plane measurements after perpendicular field annealing. EB is more in case of out of plane direction due to large perpendicular anisotropy in comparison with in plane direction. Above the critical thickness, EB variation is explained on the basis of random field model in the Heisenberg regime, which has been proposed by Malozemoff. Indeed there exists an inverse relationship between EB and IrMn layer thickness. Evidenced vertical shift apart from the horizontal shift for magnetization loops is attributed to frozen magnetic moments in one of the layers at the interface. Present results would prove to be helpful in spintronic device applications.

Growth dependent magnetization reversal in Co2MnAl full Heusler alloy thin films

Science.gov (United States)

Barwal, Vineet; Husain, Sajid; Behera, Nilamani; Goyat, Ekta; Chaudhary, Sujeet

2018-02-01

Angular dependent magnetization reversal has been investigated in Co2MnAl (CMA) full Heusler alloy thin films grown on Si(100) at different growth temperatures (Ts) by DC-magnetron sputtering. An M -shaped curve is observed in the in-plane angular (0°-360°) dependent coercivity (ADC) by magneto-optical Kerr effect measurements. The dependence of the magnetization reversal on Ts is investigated in detail to bring out the structure-property correlation with regards to ADC in these polycrystalline CMA thin films. This magnetization reversal ( M -shaped ADC behavior) is well described by the two-phase model, which is a combination of Kondorsky (domain wall motion) and Stoner Wohlfarth (coherent rotation) models. In this model, magnetization reversal starts with depinning of domain walls, with their gradual displacement explained by the Kondorsky model, and at a higher field (when the domain walls merge), the system follows coherent rotation before reaching its saturation following the Stoner Wohlfarth model. Further, the analysis of angular dependent squareness ratio (Mr/Ms) indicates that our films clearly exhibited twofold uniaxial anisotropy, which is related to self-steering effect arising due to the obliquely incident flux during the film-growth.

Electronic structure and magnetic properties of Ni-doped SnO2 thin films

Science.gov (United States)

Sharma, Mayuri; Kumar, Shalendra; Alvi, P. A.

2018-05-01

This paper reports the electronic structure and magnetic properties of Ni-doped SnO2 thin film which were grown on Si (100) substrate by PLD (pulse laser deposition) technique under oxygen partial pressure (PO2). For getting electronic structure and magnetic behavior, the films were characterized using near edge X-ray absorption fine structure spectroscopy (NEXAFS) and DC magnetization measurements. The NEXAFS study at Ni L3,2 edge has been done to understand the local environment of Ni and Sn ions within SnO2 lattice. DC magnetization measurement shows that the saturation magnetization increases with the increase in substitution of Ni2+ ions in the system.

Measurement setup for the magnetic penetration depth and superfluid stiffness in thin superconducting films

Energy Technology Data Exchange (ETDEWEB)

Fuchs, Lorenz; Brunner, Markus Christopher Paul; Schneider, Ina; Kronfeldner, Klaus; Strunk, Christoph [Institute for exp. and appl. Physics, University of Regensburg (Germany); Bousquet, Jessica; Bustarret, Etienne [Institut NEEL, Grenoble (France)

2015-07-01

A mutual inductance measurement setup has been established in order to determine the magnetic penetration depths of thin film superconductors. By measuring the variation of the mutual inductance M, the temperature dependent penetration depth can be evaluated. The setup has been characterized using thin aluminum and niobium films as a reference. Temperature dependence of λ of B-doped diamond films is determined down to 0.3 K and compared with theoretical expectations. The impact of the doping ratio B/C and film thickness on λ and T{sub c} is investigated. Correlation between the film impedance σ = σ{sub 1} - i σ{sub 2} and λ is examined.

The structure and magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film

Science.gov (United States)

Huang, Yuanqi; Chen, Zhengwei; Zhang, Xiao; Wang, Xiaolong; Zhi, Yusong; Wu, Zhenping; Tang, Weihua

2018-05-01

High quality epitaxial single phase (Ga0.96Mn0.04)2O3 and Ga2O3 thin films have been prepared on sapphire substrates by using laser molecular beam epitaxy (L-MBE). X-ray diffraction results indicate that the thin films have the monoclinic structure with a ≤ft( {\\bar 201} \\right) preferable orientation. Room temperature (RT) ferromagnetism appears and the magnetic properties of β-(Ga0.96Mn0.04)2O3 thin film are enhanced compared with our previous works. Experiments as well as the first principle method are used to explain the role of Mn dopant on the structure and magnetic properties of the thin films. The ferromagnetic properties are explained based on the concentration of transition element and the defects in the thin films. Project supported by the National Natural Science Foundation of China (Nos. 11404029, 51572033, 51172208) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT).

Magnetization process in FePd thin films

International Nuclear Information System (INIS)

Klein, O.; Samson, Y.; Marty, A.; Guillous, S.; Viret, M.; Fermon, C.; Alloul, H.

2001-01-01

A custom made magnetic force microscope is used to study the magnetization process in thin films of FePd throughout the entire hysteresis loop. The 40 nm thick sample has a strong perpendicular anisotropy, which leads to a maze of 80 nm wide stripes of opposite polarity in the remanent state. The growth of M, when H increases, happens through an unwinding of the reversed domain along their axis. Together with the length recession, the reversed domain width also contracts with increasing field. The later effect is estimated by comparison of our images with magneto-optical Kerr measurements. A large disorder in the propagation process of the domain walls is observed. It is also found that the bubble configuration near the saturation field is unstable. [copyright] 2001 American Institute of Physics

Structure and magnetic properties of highly textured nanocrystalline Mn–Zn ferrite thin film

Energy Technology Data Exchange (ETDEWEB)

Joseph, Jaison, E-mail: jaisonjosephp@gmail.com [Department of Physics, Goverment College, Khandola, Goa 403107 India (India); Tangsali, R.B. [Department of Physics, Goa University, Taleigao Plateau, Goa 403206 India (India); Pillai, V.P. Mahadevan [Department of Optoelectronics, University of Kerala,Thiruvananthapuram, Kerala 695581 India (India); Choudhary, R.J.; Phase, D.M.; Ganeshan, V. [UGC-DAE-CSR Indore, Madhya Pradesh 452017 India. (India)

2015-01-01

Nanoparticles of Mn{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} were chemically synthesized by co-precipitating the metal ions in aqueous solutions in a suitable alkaline medium. The identified XRD peaks confirm single phase spinal formation. The nanoparticle size authentication is carried out from XRD data using Debye Scherrer equation. Thin film fabricated from this nanomaterial by pulse laser deposition technique on quartz substrate was characterized using XRD and Raman spectroscopic techniques. XRD results revealed the formation of high degree of texture in the film. AFM analysis confirms nanogranular morphology and preferred directional growth. A high deposition pressure and the use of a laser plume confined to a small area for transportation of the target species created certain level of porosity in the deposited thin film. Magnetic property measurement of this highly textured nanocrystalline Mn–Zn ferrite thin film revealed enhancement in properties, which are explained on the basis of texture and surface features originated from film growth mechanism.

Gracing incidence small angle neutron scattering of incommensurate magnetic structures in MnSi thin films

Energy Technology Data Exchange (ETDEWEB)

Wiedemann, Birgit; Pfleiderer, Christian; Boeni, Peter [Physik Department, Technische Universitaet Muenchen (Germany); Zhang, Shilei; Hesjedal, Thorsten [Clarendon Laboratory, Department of Physics, University of Oxford (United Kingdom); Khaydukov, Yury; Soltwedel, Olaf; Keller, Thomas [Max-Planck-Institut fuer Festkoerperforschung (Germany); Max Planck Society, Outstation at FRM-II (Germany); Muehlbauer, Sebastian [Forschungsneutronenquelle Heinz Maier Leibnitz, Technische Universitaet Muenchen (Germany); Chacon, Alfonso [Physik Department, Technische Universitaet Muenchen (Germany); Forschungsneutronenquelle Heinz Maier Leibnitz, Technische Universitaet Muenchen (Germany)

2015-07-01

The topological stability of skyrmions in bulk samples of MnSi and the observation of spin transfer torque effects at ultra-low current densities have generated great interest in skyrmions in chiral magnets as a new route towards next generation spintronics devices. Yet, the formation of skyrmions in MBE grown thin films of MnSi reported in the literature is highly controversial. We report gracing incidence small angle neutron scattering (GISANS) of the magnetic order in selected thin films of MnSi grown by state of the art MBE techniques. In combination with polarised neutron reflectometry (PNR) and magnetisation measurements of the same samples our data provide direct reciprocal space information of the incommensurate magnetic order, clarifying the nature of magnetic phase diagram.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

Energy Technology Data Exchange (ETDEWEB)

Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

2011-12-15

Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

International Nuclear Information System (INIS)

Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

2011-01-01

Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

The effect of Mg dopants on magnetic and structural properties of iron oxide and zinc ferrite thin films

Science.gov (United States)

Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet

2018-06-01

Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.

Angular dependence of the irreversible magnetization of YBa2Cu3O7 superconducting thin films

International Nuclear Information System (INIS)

Thrane, B.P.; Schlenker, C.; Dumas, J.; Buder, R.

1996-01-01

YBa 2 Cu 3 O 7 superconducting thin films have been studied by magnetization measurements in oblique fields up to 0.8 T both at low temperature and at temperatures close to T c . Both components of magnetization parallel and perpendicular to the applied field could be measured with two pairs of crossed detection coils. In all cases the magnetization is found to be perpendicular to the film plane. This is due to the self-field effects related to the thin-film geometry which force the critical currents to circulate along the film plane. At low temperature the properties are found to depend only on the component of the applied magnetic field perpendicular to this plane, as expected in the situation where demagnetizing field effects are dominant. However, at temperatures close to T c the critical currents and therefore the pinning are found to increase when the applied field approaches the film plane. This is attributed to the effect of intrinsic pinning which may be related to the kink structure of the vortices in oblique fields. copyright 1996 The American Physical Society

Magnetic studies of Fe-Y compositionally modulated thin films

International Nuclear Information System (INIS)

Badia, F.; Ferrater, C.; Lousa, A.; Martinez, B.; Labarta, A.; Tejada, J.

1990-01-01

Compositionally modulated thin films of Y/Fe have been studied by using SQUID magnetometry. Samples were grown by electron-beam evaporation onto Kapton substrates. In the low applied field regime, the samples show irreversible behavior when they are submitted to ZFC-FC magnetization processes, increasing the irreversibility zone as the thickness of the Fe layers increases. In the high applied magnetic field regime (H≥10 000 Oe), samples show ferromagnetic behavior. The temperature dependence of the saturation magnetization has been studied, and it was found that both spin-wave excitations and Stoner excitations occur at temperatures higher than 40 K, and a marked deviation from the T 3/2 law was noted below 30 K

Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

International Nuclear Information System (INIS)

Singh, Akhilesh Kumar; Hsu, Jen-Hwa; Perumal, Alagarsamy

2016-01-01

We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)] 2 /FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T A =200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T A ≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T A =300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T A and temperature. A large reduction in coercivity (H C ) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H C (T), i.e., a broad minimum in H C (T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H C (T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T C ) with T A (x). The multilayer films annealed at 200 °C exhibit low value of T C with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T C with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and nature of interfaces. - Highlights: • Preparation and

Magnetic properties of FeNi-based thin film materials with different additives

KAUST Repository

Liang, C.; Gooneratne, C.P.; Wang, Q.X.; Liu, Y.; Gianchandani, Y.; Kosel, Jü rgen

2014-01-01

This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

International Nuclear Information System (INIS)

Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

2015-01-01

Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

Single-molecule magnets on a polymeric thin film as magnetic quantum bits

Science.gov (United States)

Ruiz-Molina, Daniel; Gomez, Jordi; Mas-Torrent, Marta; Balana, Ana Isabel; Domingo, Nues; Tejada, Javier; Martinez, Maria Teresa; Rovira, Concepcio; Veciana, Jaume

2003-04-01

Single-molecule magnets (SMM) have a large-spin ground state with appreciable magnetic anisotropy, resulting in a barrier for the spin reversal As a consequence, interesting magnetic properties such as out-of-phase ac magnetic susceptibility signals and stepwise magnetization hysteresis loops are observed. In addition to resonant magnetization tunnelling, during the last few years several other interesting phenomena have also been reported. The origin of the slow magnetization relaxation rates as well as of other phenomena are due to individual molecules rather than to long-range ordering; as confirmed by magnetization relaxation and heat capacity studies. Therefore, SMM represent nanoscale magnetic particles of a sharply defined size that offer the potential access to the ultimate high-density information storage devices as well as for quantum computing applications. However, if a truly molecular computational device based on SMM is to be achieved, new systematic studies that allow us to find a proper way to address properly oriented individual molecules or molecular aggregates onto the surface of a thin film, where each molecule or molecular aggregate can be used as a bit of information, are highly required. Here we report a new soft, reliable and simple methodology to address individual Mn12 molecules onto a film surface, as revealed by Atomic Force Microscopy (AFM) and Magnetic Force Microscopy (MFM) images. Moreover, the advantageous properties of polymeric matrices, such as flexibility, transparency and low density, make this type of materials very interesting for potential applications.

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

International Nuclear Information System (INIS)

Ning Shuai; Zhan Peng; Wang Wei-Peng; Li Zheng-Cao; Zhang Zheng-Jun

2014-01-01

Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ∼ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ∼ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation

Energy Technology Data Exchange (ETDEWEB)

Aksu, S. [SoloPower, Inc., 5981 Optical Ct., San Jose, CA 95138 (United States); Bacaksiz, E., E-mail: eminb@ktu.edu.tr [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Parlak, M. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Yilmaz, S.; Polat, I.; Altunbas, M. [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Tuerksoy, M.; Topkaya, R. [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey); Ozdogan, K. [Department of Physics, Yildiz Technical University, 34210 Istanbul (Turkey)

2011-10-17

Highlights: {yields} Cadmium sulphide thin films were deposited by vacuum evaporation. {yields} Elemental Mn was deposited onto CdS thin films by using electron beam evaporation and annealed under vacuum at different temperatures. {yields} Structural, optical and magnetic studies of Mn-doped CdS have been investigated. {yields} X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. {yields} Magnetic measurements show that Mn-doped CdS thin films exhibit a ferromagnetism behavior at room temperature. - Abstract: The effect of Mn-doping on the vacuum deposited CdS thin films has been investigated by studying the changes in the structural, optical and magnetic properties of the films. A thin Mn layer evaporated on the CdS film surface served as the source layer for the diffusion doping. Doping was accomplished by annealing the CdS/Mn stack layers at the temperature range from 300 deg. C to 400 deg. C in step of 50 deg. C for 30 min under vacuum. The X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. The incorporation of Mn did not cause any change in the texture but reduced the peak intensity and lead to a smaller crystallite size. Investigation of surface morphology using atomic force microscopy confirmed the decrease in the grain size with the Mn diffusion. In addition, a more uniform grain size distribution was observed in the doped films. X-ray photoelectron spectroscopy analysis showed that Mn atoms on the surface of the films were bounded to either sulphur or oxygen atoms. Auger electron spectroscopy of the diffusion-doped CdS sample at 350 deg. C indicated that the atomic Mn concentration was higher close to the surface region and Mn was distributed with a steadily decreasing profile through the bulk of the film with an average atomic concentration value around few

Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

International Nuclear Information System (INIS)

Yu, Ying; Zhan, Qingfeng; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Wang, Baomin; Li, Run-Wei; Wei, Jinwu; Wang, Jianbo; Xie, Shuhong

2015-01-01

Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices

Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

Science.gov (United States)

Yu, Ying; Zhan, Qingfeng; Wei, Jinwu; Wang, Jianbo; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Xie, Shuhong; Wang, Baomin; Li, Run-Wei

2015-04-01

Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

Structural and magnetic characterization of martensitic Ni-Mn-Ga thin films deposited on Mo foil

International Nuclear Information System (INIS)

Chernenko, V.A.; Anton, R. Lopez; Kohl, M.; Barandiaran, J.M.; Ohtsuka, M.; Orue, I.; Besseghini, S.

2006-01-01

Three martensitic Ni 51.4 Mn 28.3 Ga 20.3 thin films sputter-deposited on a Mo foil were investigated with regard to their crystal and magnetic domain structures, as well as their magnetic and magnetostrain properties. The film thicknesses, d, were 0.1, 0.4 and 1.0μm. X-ray and electron diffraction patterns revealed a tetragonal modulated martensitic phase (10M) in the films. The surface topography and micromagnetic structure were studied by scanning probe microscopy. A maze magnetic domain structure featuring a large out-of-plane magnetization component was found in all films. The domain width, δ, depends on the film thickness as δ∼d. The thickness dependencies of the saturation magnetization, saturation magnetic field and magnetic anisotropy were clarified. Beam cantilever tests on the Ni-Mn-Ga/Mo composite as a function of magnetic field showed reversible strains, which are larger than ordinary magnetostriction

Ultrafast Magnetization Dynamics of SrRuO3 Thin Films

International Nuclear Information System (INIS)

Langner, Matthew C.

2009-01-01

Itinerant ferromagnet SrRuO3 has drawn interest from physicists due to its unusual transport and magnetic properties as well as from engineers due to its low resistivity and good lattice-matching to other oxide materials. The exact electronic structure remains a mystery, as well as details of the interactions between magnetic and electron transport properties. This thesis describes the use of time-resolved magneto-optical Kerr spectroscopy to study the ferromagnetic resonance of SrRuO3 thin films, where the ferromagnetic resonance is initiated by a sudden change in the easy axis direction in response to a pump pulse. The rotation of the easy axis is induced by laser heating, taking advantage of a temperature-dependent easy axis direction in SrRuO3 thin films. By measuring the change in temperature of the magnetic system in response to the laser pulse, we find that the specific heat is dominated by magnons up to unusually high temperature, ∼ 100 K, and thermal diffusion is limited by a boundary resistance between the film and the substrate that is not consistent with standard phonon reflection and scattering models. We observe a high FMR frequency, 250 GHz, and large Gilbert damping parameter, alpha ∼ 1, consistent with strong spin-orbit coupling. We observe a time-dependent change in the easy axis direction on a ps time-scale, and we find that parameters associated with the change in easy axis, as well as the damping parameter, have a non-monotonic temperature dependence similar to that observed in anomalous Hall measurements.

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

Science.gov (United States)

Ning, Shuai; Zhan, Peng; Wang, Wei-Peng; Li, Zheng-Cao; Zhang, Zheng-Jun

2014-12-01

Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ~ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ~ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

Critical behavior of ferromagnetic Ising thin films

International Nuclear Information System (INIS)

Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

2006-01-01

In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

Electrical and magnetic properties of electrodeposited nickel incorporated diamond-like carbon thin films

Science.gov (United States)

Pandey, B.; Das, D.; Kar, A. K.

2015-05-01

Nanocomposite diamond-like carbon (DLC) thin films have been synthesized by incorporating nickel (Ni) nanoparticles in DLC matrix with varying concentration of nickel. DLC and Ni-DLC thin films have been deposited on ITO coated glass substrates employing low voltage electrodeposition method. Electrical properties of the samples were studied by measuring current-voltage characteristics and dielectric properties. The current approaches toward an ohmic behavior with metal addition. This tendency of increasing ohmicity is enhanced with increase in dilution of the electrolyte. The conductivity increases with Ni addition and interestingly it continues to increase with dilution of Ni concentration in the electrolyte in the range of our study. Magnetic properties for DLC and Ni-DLC thin film samples were examined by electron paramagnetic resonance (EPR) measurements and Super Conducting Quantum Interference Device (SQUID) measurements. g-Value for DLC is 2.074, whereas it decreases to 2.055 with Ni addition in the electrolyte. This decrement arises from the increased sp2 content in DLC matrix. The magnetic moment vs. magnetic field (m-H) curves of Ni-DLC indicate superparamagnetic behavior which may be due to ferromagnetic contribution from the incorporated nickel nanoparticles in the DLC matrix. The ZFC curve of Ni-DLC after the blocking temperature shows a combined contribution of ferromagnetic, superparamagnetic and paramagnetic nature of the materials persisting up to 300 K.

Critical phenomena in Ising-type thin films by Monte Carlo study

International Nuclear Information System (INIS)

Masrour, R.; Jabar, A.; Benyoussef, A.; Hamedoun, M.

2016-01-01

The magnetic properties of ferrimagnetic spin-2 and 3/2 Ising-typed thin films are studied by Monte Carlo simulation. The critical temperature is obtained for different values of thickness of the thin film and for different exchange interactions. The total magnetization has been determined for different values of exchange interactions in surface and in bulk and different temperatures. The magnetic hysteresis cycle is obtained for different values of exchange interactions ferro and antiferromagnetic in the surface and in the bulk and for different values of temperatures for a fixed size of the film thickness. The coercive field increase with increasing the film thickness. - Highlights: • The magnetic properties of thin films are studied by Monte Carlo simulation. • The critical temperature is obtained for different values of thickness of thin film. • The magnetic hysteresis cycle is obtained in the surface and in the bulk. • The coercive field increase with increasing the thin film thickness.

Critical phenomena in Ising-type thin films by Monte Carlo study

Energy Technology Data Exchange (ETDEWEB)

Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, 63, 46000 Safi (Morocco); Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E.URAC 12, Université Mohammed V, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Jabar, A. [Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E.URAC 12, Université Mohammed V, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Benyoussef, A. [Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E.URAC 12, Université Mohammed V, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco); Hamedoun, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco)

2016-04-01

The magnetic properties of ferrimagnetic spin-2 and 3/2 Ising-typed thin films are studied by Monte Carlo simulation. The critical temperature is obtained for different values of thickness of the thin film and for different exchange interactions. The total magnetization has been determined for different values of exchange interactions in surface and in bulk and different temperatures. The magnetic hysteresis cycle is obtained for different values of exchange interactions ferro and antiferromagnetic in the surface and in the bulk and for different values of temperatures for a fixed size of the film thickness. The coercive field increase with increasing the film thickness. - Highlights: • The magnetic properties of thin films are studied by Monte Carlo simulation. • The critical temperature is obtained for different values of thickness of thin film. • The magnetic hysteresis cycle is obtained in the surface and in the bulk. • The coercive field increase with increasing the thin film thickness.

Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

Science.gov (United States)

Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

2013-05-22

Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

Magnetic history dependence of metastable states in thin films with dipolar interactions

International Nuclear Information System (INIS)

Iglesias, Oscar; Labarta, Amilcar

2000-01-01

We present the results of a Monte Carlo simulation of the ground state and magnetic relaxation of a model of a thin film consisting of a two-dimensional square lattice of Heisenberg spins with perpendicular anisotropy K, exchange J and long-range dipolar interactions g. We have studied the ground state configurations of this system for a wide range of the interaction parameters J/g, K/g by means of the simulated annealing procedure, showing that the model is able to reproduce the different magnetic configurations found in real samples. We have found the existence of a certain range of K/g, J/g values for which in-plane and out-of-plane configurations are quasi-degenerated in energy. We show that when a system in this region of parameters is perturbed by an external force that is subsequently removed, different kinds of ordering may be induced depending on the followed procedure. In particular, simulations of relaxations from saturation under an AC demagnetizing field or in zero field are in qualitative agreement with recent experiments on epitaxial and granular alloy thin films, which show a wide variety of magnetic patterns depending on their magnetic history

Effects of strain on the magnetic and transport properties of the epitaxial La0.5Ca0.5MnO3 thin films

International Nuclear Information System (INIS)

Zarifi, M.; Kameli, P.; Ehsani, M.H.; Ahmadvand, H.; Salamati, H.

2016-01-01

The epitaxial strain can considerably modify the physical properties of thin films compared to the bulk. This paper reports the effects of substrate-induced strain on La 0.5 Ca 0.5 MnO 3 (LCMO) thin films, grown on (100) SrTiO 3 (STO) and LaAlO 3 (LAO) substrates by pulsed laser deposition technique. Transport and magnetic properties were found to be strongly dependent on strain type. It is also shown that compressive (tensile) strain leads to the increase (decrease) in the magnetization of the films. Moreover, it was observed that all LCMO films deposited on both LAO and STO substrates behave as an insulator, but LCMO/LAO thin films with compressive strain have lower resistivity than LCMO/STO thin films with tensile strain. Applying magnetic field to LCMO/STO thin films with thickness of 25 and 50 nm leads to very small change in the resistivity, while the effects of magnetic field on the sample with thickness of 125 nm leads to an insulator–metal transition. For LCMO/LAO thin films, the magnetic field has a strong impact on the resistivity of samples. The results show that the magnetoresistance (MR) is enhanced by increasing film thickness for LCMO/LAO samples, due to the relatively stronger phase separation. For LCMO/STO thin films MR is drastically decreased by reduction of film thickness, which is attributed to the enhancement of the charge–orbital order (CO–O) accompanying the complex spin order (the so-called CE type). The changes of the antiferromagnetic structure from the CE to C type and the enhancement of the CE type could be attributed to the in-plane compressive and tensile strain, respectively. - Highlights: • Epitaxial La 0.5 Ca 0.5 MnO 3 thin films, grown on (100) SrTiO 3 and LaAlO 3 substrates. • The compressive strain leads to the increase in the magnetization of the films. • The tensile strain leads to the decrease in the magnetization of the films. • The magnetoresistance is enhanced by increasing film thickness.

On the frequency dependence of the magnetic permeability of FeHfO thin films

NARCIS (Netherlands)

Bloemen, P.J.H.; Rulkens, B.

1998-01-01

The frequency dependence of the magnetic permeability as well as of the electrical impedance have been investigated for soft-magnetic granular FeHfO thin films. The impedance measurements indicate that capacitive effects resulting from the inhomogeneous structure of the layers are of no importance

Thin films for emerging applications v.16

CERN Document Server

Francombe, Maurice H

1992-01-01

Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

Probing magnetism and electronic structure of Fe-doped ZnO thin films

International Nuclear Information System (INIS)

El Amiri, A.; Moubah, R.; Lmai, F.; Abid, M.; Hassanain, N.; Hlil, E.K.; Lassri, H.

2016-01-01

Ab-initio calculations using Korringa–Kohn–Rostoker method combined with the coherent potential approximation were performed in order to study the magnetic properties of Fe-doped ZnO thin films with different Fe contents. The extracted parameters are compared with those determined experimentally. Based on total and partial densities of state curves, we demonstrate that there is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions, respectively. The dominant mechanism is found to be antiferromagnetic. However, with increasing Fe content the ferromagnetic contribution increases. In addition, the effect of structural defects on the magnetism of the system is reported. It is shown that both Zn and O vacancies increase ferromagnetism, which is more pronounced in case of Zn. - Highlights: • The KKR–CPA approach was used to study the magnetism of Fe-doped ZnO thin films. • There is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions. • Zn vacancies are more significant than the O ones for obtaining ferromagnetism.

Probing magnetism and electronic structure of Fe-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

El Amiri, A., E-mail: aelamiri@casablanca.ma [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Moubah, R., E-mail: reda.moubah@hotmail.fr [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Lmai, F. [LPTA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Abid, M. [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Hassanain, N. [Laboratoire de Physique des Matériaux, Faculté des Sciences, BP 1014 Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, 38042 Grenoble (France); Lassri, H. [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco)

2016-01-15

Ab-initio calculations using Korringa–Kohn–Rostoker method combined with the coherent potential approximation were performed in order to study the magnetic properties of Fe-doped ZnO thin films with different Fe contents. The extracted parameters are compared with those determined experimentally. Based on total and partial densities of state curves, we demonstrate that there is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions, respectively. The dominant mechanism is found to be antiferromagnetic. However, with increasing Fe content the ferromagnetic contribution increases. In addition, the effect of structural defects on the magnetism of the system is reported. It is shown that both Zn and O vacancies increase ferromagnetism, which is more pronounced in case of Zn. - Highlights: • The KKR–CPA approach was used to study the magnetism of Fe-doped ZnO thin films. • There is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions. • Zn vacancies are more significant than the O ones for obtaining ferromagnetism.

Tailoring of in-plane magnetic anisotropy in polycrystalline cobalt thin films by external stress

Energy Technology Data Exchange (ETDEWEB)

Kumar, Dileep, E-mail: dkumar@csr.res.in [UGC-DAE Consortium for Scientic Research, Khandwa Road, Indore 452001 (India); Singh, Sadhana [UGC-DAE Consortium for Scientic Research, Khandwa Road, Indore 452001 (India); Vishawakarma, Pramod [School of Nanotechnology, RGPV, Bhopal 462036 (India); Dev, Arun Singh; Reddy, V.R. [UGC-DAE Consortium for Scientic Research, Khandwa Road, Indore 452001 (India); Gupta, Ajay [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201303 (India)

2016-11-15

Polycrystalline Co films of nominal thickness ~180 Å were deposited on intentionally curved Si substrates. Tensile and compressive stresses of 100 MPa and 150 MPa were induced in the films by relieving the curvature. It has been found that, within the elastic limit, presence of stress leads to an in-plane magnetic anisotropy in the film and its strength increases with increasing stress. Easy axis of magnetization in the films is found to be parallel/ transverse to the compressive /tensile stresses respectively. The origin of magnetic anisotropy in the stressed films is understood in terms of magneto- elastic coupling, where the stress try to align the magnetic moments in order to minimize the magneto-elastic as well as anisotropy energy. Tensile stress is also found to be responsible for the surface smoothening of the films, which is attributed to the movement of the atoms associated with the applied stress. The present work provides a possible way to tailor the magnetic anisotropy and its direction in polycrystalline and amorphous films using external stress. - Highlights: • Tensile and compressive stresses were induced in Co films by removing the bending force from the substrates after film deposition. • Controlled external mechanical stress is found to be responsible for magnetic anisotropies in amorphous and polycrystalline thin films, where crystalline anisotropy is absent. • Tensile stress leads to surface smoothening of the polycrystalline Co films.

The origin of magnetism in transition metal-doped ZrO2 thin films: Experiment and theory

KAUST Repository

Hong, Nguyenhoa

2013-10-04

We have investigated the magnetic properties of Fe/Co/Ni-doped ZrO 2 laser ablated thin films in comparison with the known results of Mn-doped ZrO2, which is thought to be a promising material for spintronics applications. It is found that doping with a transition metal can induce room temperature ferromagnetism in \\'fake\\' diamond. Theoretical analysis based on density functional theory confirms the experimental measurements, by revealing that the magnetic moments of Mn- and Ni-doped ZrO2 thin films are much larger than that of Fe- or Co-doped ZrO2 thin films. Most importantly, our calculations confirm that Mn- and Ni-doped ZrO2 show a ferromagnetic ground state in comparison to Co- and Fe-doped ZrO 2, which favor an antiferromagnetic ground state. © 2013 IOP Publishing Ltd.

Highly coercive thin-film nanostructures

International Nuclear Information System (INIS)

Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

2005-01-01

The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

Defect induced modification of structural, topographical and magnetic properties of zinc ferrite thin films by swift heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Raghavan, Lisha [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India); Inter University Accelerator Center, New Delhi 110067 (India); Joy, P.A. [National Chemical Laboratory, Pune (India); Vijaykumar, B. Varma; Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Anantharaman, M.R., E-mail: mraiyer@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India)

2017-04-01

Highlights: • Zinc ferrite films exhibited room temperature ferrimagnetic property. • On ion irradiation amorphisation of films were observed. • The surface morphology undergoes changes with ion irradiation. • The saturation magnetisation decreases on ion irradiation. - Abstract: Swift heavy ion irradiation provides unique ways to modify physical and chemical properties of materials. In ferrites, the magnetic properties can change significantly as a result of swift heavy ion irradiation. Zinc ferrite is an antiferromagnet with a Neel temperature of 10 K and exhibits anomalous magnetic properties in the nano regime. Ion irradiation can cause amorphisation of zinc ferrite thin films; thus the role of crystallinity on magnetic properties can be examined. The influence of surface topography in these thin films can also be studied. Zinc ferrite thin films, of thickness 320 nm, prepared by RF sputtering were irradiated with 100 MeV Ag ions. Structural characterization showed amorphisation and subsequent reduction in particle size. The change in magnetic properties due to irradiation was correlated with structural and topographical effects of ion irradiation. A rough estimation of ion track radius is done from the magnetic studies.

Magnon dispersion in thin magnetic films

International Nuclear Information System (INIS)

Balashov, T; Wulfhekel, W; Buczek, P; Sandratskii, L; Ernst, A

2014-01-01

Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu 3 Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations. (paper)

Magnon dispersion in thin magnetic films.

Science.gov (United States)

Balashov, T; Buczek, P; Sandratskii, L; Ernst, A; Wulfhekel, W

2014-10-01

Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu3Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations.

Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Akhilesh Kumar [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Hsu, Jen-Hwa [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

2016-11-15

We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)]{sub 2}/FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T{sub A}=200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T{sub A}≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T{sub A}=300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T{sub A} and temperature. A large reduction in coercivity (H{sub C}) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H{sub C}(T), i.e., a broad minimum in H{sub C}(T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H{sub C}(T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T{sub C}) with T{sub A} (x). The multilayer films annealed at 200 °C exhibit low value of T{sub C} with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T{sub C} with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and

Study of electronic structure and magnetic properties of epitaxial Co{sub 2}FeAl Heusler Alloy Thin Films

Energy Technology Data Exchange (ETDEWEB)

Soni, S. [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Dalela, S., E-mail: sdphysics@rediffmail.com [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Sharma, S.S. [Department of Physics, Govt. Women Engineering College, Ajmer (India); Liu, E.K.; Wang, W.H.; Wu, G.H. [State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Kumar, M. [Department of Physics, Malviya National Institute of Technology, Jaipur-302017 (India); Garg, K.B. [Department of Physics, University of Rajasthan, Jaipur-302004 (India)

2016-07-25

This work reports the magnetic and electronic characterization of plane magnetized buried Heusler Co{sub 2}FeAl nano thin films of different thickness by X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) measurements. . The spectra on both Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence, corresponding to a ferromagnetically-aligned moments on Fe and Co atoms conditioning the peculiar characteristics of the Co{sub 2}FeAl Heusler compound (a half-metallic ferromagnet). The detailed knowledge of the related magnetic and electronic properties of these samples over a wide range of thickness of films are indispensable for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications. - Highlights: • Electronic structure and Magnetic Properties of Epitaxial Co{sub 2}FeAl Heusler Films. • X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). • Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence. • Calculated Orbital, Spin and total magnetic moments of Fe and Co for 30 nm Co{sub 2}FeAl thin film. • The total magnetic moment of Fe at L{sub 2,3} edges increases with the thickness of the Co2FeAl films.

Self-consistent studies of magnetic thin film Ni (001)

International Nuclear Information System (INIS)

Wang, C.S.; Freeman, A.J.

1979-01-01

Advances in experimental methods for studying surface phenomena have provided the stimulus to develop theoretical methods capable of interpreting this wealth of new information. Of particular interest have been the relative roles of bulk and surface contributions since in several important cases agreement between experiment and bulk self-consistent (SC) calculations within the local spin density functional formalism (LSDF) is lacking. We discuss our recent extension of the (LSDF) approach to the study of thin films (slabs) and the role of surface effects on magnetic properties. Results are described for Ni (001) films using our new SC numerical basis set LCAO method. Self-consistency within the superposition of overlapping spherical atomic charge density model is obtained iteratively with the atomic configuration as the adjustable parameter. Results are presented for the electronic charge densities and local density of states. The origin and role of (magnetic) surface states is discussed by comparison with results of earlier bulk calculations

Multi-jump magnetic switching in ion-beam sputtered amorphous Co20Fe60B20 thin films

International Nuclear Information System (INIS)

Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

2013-01-01

Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co 20 Fe 60 B 20 (5–75 nm) thin films grown on Si/amorphous SiO 2 are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices

Magnetic and structural study of Cu-doped TiO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Torres, C.E. Rodriguez [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina)], E-mail: torres@fisica.unlp.edu.ar; Golmar, F. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H. [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina); Duhalde, S. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina)

2007-10-31

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO{sub 2} thin films were grown by pulsed laser deposition technique on LaAlO{sub 3} substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO{sub 2}. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO{sub 2}.

Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO3 thin films

International Nuclear Information System (INIS)

Habib, Zubida; Ikram, Mohd; Mir, Sajad A.; Sultan, Khalid; Abida; Majid, Kowsar; Asokan, K.

2017-01-01

Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO 3 thin films grown by pulsed laser deposition on LaAlO 3 substrates. Electronic excitations were induced by 200 MeV Ag 12+ ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe 1-x Ni x O 3 (x = 0.1 and 0.3) films compared to HoFeO 3 film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

International Nuclear Information System (INIS)

Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

2016-01-01

CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

Magnetic resonance study of bulk and thin film EuTiO3

International Nuclear Information System (INIS)

Laguta, V V; Kamba, S; Maryško, M; Andrzejewski, B; Kachlík, M; Maca, K; Lee, J H; Schlom, D G

2017-01-01

Magnetic resonance spectra of EuTiO 3 in both bulk and thin film form were taken at temperatures from 3–350 K and microwave frequencies from 9.2–9.8 and 34 GHz. In the paramagnetic phase, magnetic resonance spectra are determined by magnetic dipole and exchange interactions between Eu 2+ spins. In the film, a large contribution arises from the demagnetization field. From detailed analysis of the linewidth and its temperature dependence, the parameters of spin–spin interactions were determined: the exchange frequency is 10.5 GHz and the estimated critical exponent of the spin correlation length is  ≈0.4. In the bulk samples, the spectra exhibited a distinct minimum in the linewidth at the Néel temperature, T N   ≈  5.5 K, while the resonance field practically does not change even on cooling below T N . This is indicative of a small magnetic anisotropy ∼320 G in the antiferromagnetic phase. In the film, the magnetic resonance spectrum is split below T N into several components due to excitation of the magnetostatic modes, corresponding to a non-uniform precession of magnetization. Moreover, the film was observed to degrade over two years. This was manifested by an increase of defects and a change in the domain structure. The saturated magnetization in the film, estimated from the magnetic resonance spectrum, was about 900 emu cm −3 or 5.5 µ B /unit cell at T   =  3.5 K. (paper)

Effect of post-annealing on the magnetic properties of sputtered Mn56Al44 thin films

Science.gov (United States)

Gupta, Nanhe Kumar; Husain, Sajid; Barwal, Vineet; Behera, Nilamani; Chaudhary, Sujeet

2018-05-01

Mn56Al44 (MnAl) thin films of constant thickness (˜30nm) were grown on naturally oxidized Si substrates using DC-magnetron sputtering. Effect of deposition parameters such as sputtering power, substrate temperature (Ts), and post-annealing temperature have been systematically invstigated. X-ray diffraction patterns revealed the presence of mixed phases, namely the τ- and β-MnAl. The highest saturation magnetization (MS) was found to be 65emu/cc using PPMS-VSM in film grown at Ts=500°C. The magnetic ordering was found to get significantly improved by performing post-annealing of these as-grwon at 400°C for 1 hr in the presence of out-of-plane magnetic field of ˜1500Oe in vacuum. In particular, at room temperature (RT), the MS got enhanced after magnetic annealing from 65emu/cc to 500 emu/cc in MnAl films grown at Ts=500°C. This sample exhibited a magneto-resistance of ˜1.5% at RT. The tuning of the structural and magnetic properties of MnAl binary alloy thin films as established here by varying the growth parameters is critical with regards to the prospective applications of MnAl, a metastable ferromagnetic system which possesses the highest perpendicular magnetic anisotropy at RT till date.

Structural and Magnetic Properties of Co-Mn-Sb Thin films

Energy Technology Data Exchange (ETDEWEB)

Meinert, M.; Schmalhorst, J.-M.; Ebke, D.; Liu, N. N.; Thomas, A.; Reiss, G.; Kanak, J.; Stobiecki, T.; Arenholz, E.

2009-12-17

Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

Effects of strain on the magnetic and transport properties of the epitaxial La0.5Ca0.5MnO3 thin films

Science.gov (United States)

Zarifi, M.; Kameli, P.; Ehsani, M. H.; Ahmadvand, H.; Salamati, H.

2016-12-01

The epitaxial strain can considerably modify the physical properties of thin films compared to the bulk. This paper reports the effects of substrate-induced strain on La0.5Ca0.5MnO3 (LCMO) thin films, grown on (100) SrTiO3 (STO) and LaAlO3 (LAO) substrates by pulsed laser deposition technique. Transport and magnetic properties were found to be strongly dependent on strain type. It is also shown that compressive (tensile) strain leads to the increase (decrease) in the magnetization of the films. Moreover, it was observed that all LCMO films deposited on both LAO and STO substrates behave as an insulator, but LCMO/LAO thin films with compressive strain have lower resistivity than LCMO/STO thin films with tensile strain. Applying magnetic field to LCMO/STO thin films with thickness of 25 and 50 nm leads to very small change in the resistivity, while the effects of magnetic field on the sample with thickness of 125 nm leads to an insulator-metal transition. For LCMO/LAO thin films, the magnetic field has a strong impact on the resistivity of samples. The results show that the magnetoresistance (MR) is enhanced by increasing film thickness for LCMO/LAO samples, due to the relatively stronger phase separation. For LCMO/STO thin films MR is drastically decreased by reduction of film thickness, which is attributed to the enhancement of the charge-orbital order (CO-O) accompanying the complex spin order (the so-called CE type). The changes of the antiferromagnetic structure from the CE to C type and the enhancement of the CE type could be attributed to the in-plane compressive and tensile strain, respectively.

Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

International Nuclear Information System (INIS)

Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

2015-01-01

The correlation between magnetic and structural properties of Co 2 FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm 2 . - Highlights: • Various Co 2 FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness

Cell culture arrays using micron-sized ferromagnetic ring-shaped thin films

Energy Technology Data Exchange (ETDEWEB)

Huang, Chen-Yu; Wei, Zung-Hang, E-mail: wei@pme.nthu.edu.tw [Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu City 300, Taiwan (China); Lai, Mei-Feng; Ger, Tzong-Rong [Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu City 300, Taiwan (China)

2015-05-07

Cell patterning has become an important technology for tissue engineering. In this research, domain walls are formed at the two ends of a ferromagnetic ring thin film after applying a strong external magnetic field, which can effectively attract magnetically labeled cells and control the position for biological cell. Magnetophoresis experiment was conducted to quantify the magnetic nanoparticle inside the cells. A ring-shaped magnetic thin films array was fabricated through photolithography. It is observed that magnetically labeled cells can be successfully attracted to the two ends of the ring-shaped magnetic thin film structure and more cells were attracted and further attached to the structures. The cells are co-cultured with the structure and kept proliferating; therefore, such ring thin film can be an important candidate for in-vitro biomedical chips or tissue engineering.

Cell culture arrays using micron-sized ferromagnetic ring-shaped thin films

International Nuclear Information System (INIS)

Huang, Chen-Yu; Wei, Zung-Hang; Lai, Mei-Feng; Ger, Tzong-Rong

2015-01-01

Cell patterning has become an important technology for tissue engineering. In this research, domain walls are formed at the two ends of a ferromagnetic ring thin film after applying a strong external magnetic field, which can effectively attract magnetically labeled cells and control the position for biological cell. Magnetophoresis experiment was conducted to quantify the magnetic nanoparticle inside the cells. A ring-shaped magnetic thin films array was fabricated through photolithography. It is observed that magnetically labeled cells can be successfully attracted to the two ends of the ring-shaped magnetic thin film structure and more cells were attracted and further attached to the structures. The cells are co-cultured with the structure and kept proliferating; therefore, such ring thin film can be an important candidate for in-vitro biomedical chips or tissue engineering

Domains in Ferroic Crystals and Thin Films

CERN Document Server

Tagantsev, Alexander K; Fousek, Jan

2010-01-01

Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

Magnetism in heterogeneous thin film systems: Resonant X-ray scattering studies

International Nuclear Information System (INIS)

Kortright, J.B.; Jiang, J.S.; Bader, S.D.; Hellwig, O.; Marguiles, D.T.; Fullerton, E.E.

2002-01-01

Magnetic and chemical heterogeneity are common in a broad range of magnetic thin film systems. Emerging resonant soft x-ray scattering techniques are well suited to resolve such heterogeneity at relevant length scales. Resonant x-ray magneto-optical Kerr effect measurements laterally average over heterogeneity but can provide depth resolution in different ways, as illustrated in measurements resolving reversible and irreversible changes in different layers of exchange-spring heterostructures. Resonant small-angle scattering measures in-plane heterogeneity and can resolve magnetic and chemical scattering sources in different ways, as illustrated in measurements of granular alloy recording media

Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki Yeon; Lee, Jeong Soo

2008-02-15

This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

Oxygen pressure-tuned epitaxy and magnetic properties of magnetite thin films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Junran [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Liu, Wenqing [York-Nanjing Joint Centre (YNJC) for Spintronics and Nanoengineering, Department of Electronics, The University of York, YO10 3DD (United Kingdom); Zhang, Minhao; Zhang, Xiaoqian; Niu, Wei; Gao, Ming [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wang, Xuefeng, E-mail: xfwang@nju.edu.cn [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Du, Jun [School of Physics, Nanjing University, Nanjing 210093 (China); Zhang, Rong [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu, Yongbing, E-mail: ybxu@nju.edu.cn [Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); York-Nanjing Joint Centre (YNJC) for Spintronics and Nanoengineering, Department of Electronics, The University of York, YO10 3DD (United Kingdom)

2017-06-15

Highlights: • Quasi-2D Fe{sub 3}O{sub 4} films were obtained by PLD. • RHEED under different oxygen pressure were observed. • Influence of oxygen pressure on Fe{sub 3}O{sub 4} films were investigated. • Epitaxy and magnetic properties were tuned by oxygen pressure. • The ratio of Fe{sup 2+}/Fe{sup 3+} fitted by XPS is the tuned factor of M{sub s}. - Abstract: Quasi-two-dimensional magnetite epitaxial thin films have been synthesized by pulsed laser deposition technique at various oxygen pressures. The saturation magnetizations of the magnetite films were found to decrease from 425 emu/cm{sup 3}, which is close to the bulk value, to 175 emu/cm{sup 3} as the growth atmospheres varying from high vacuum (∼1 × 10{sup −8} mbar) to oxygen pressure of 1 × 10{sup −3} mbar. The ratio of the Fe{sup 3+} to Fe{sup 2+} increases from 2 to 2.7 as oxygen pressure increasing shown by XPS fitting, which weakens the net magnetic moment generated by Fe{sup 2+} at octahedral sites as the spins of the Fe{sup 3+} ions at octahedral and tetrahedral sites are aligned in antiparallel. The results offer direct experimental evidence of the influence to the Fe{sup 3+}/Fe{sup 2+} ratio and the magnetic moment in magnetite epitaxy films by oxygen pressure, which is significant for spintronic applications.

Magnetic and structural properties of NdFeB thin film prepared by step annealing

International Nuclear Information System (INIS)

Serrona, Leo K.E.B.; Sugimura, A.; Fujisaki, R.; Okuda, T.; Adachi, N.; Ohsato, H.; Sakamoto, I.; Nakanishi, A.; Motokawa, M.

2003-01-01

The crystallization of the amorphous phase into the tetragonal Nd 2 Fe 14 B (PHI) phase and the corresponding changes in magnetic properties have been examined by step annealing experiment using a 2 μm thick NdFeB film sample. Microstructural and magnetic analysis indicate that the film was magnetically soft as deposited with the coercivity H ciperp -1 and the remnant magnetization 4πM rperp -1 was developed and diffraction analysis showed evidence of PHI phase 002l peaks being aligned perpendicular to the film plane. At an optimum annealing temperature of 575 deg. C, the remnant magnetization of this anisotropic thin film is around 0.60 T with intrinsic coercivity of ∼1340 kA m -1 . Annealing the film sample at 200 deg. C≤T ann ≤750 deg. C showed variations in magnetic properties that were mostly due to the change in the perpendicular anisotropy. Based on 4πM sperpendicular values plotted against T ann , a dip in 4πM sperpendicular values was observed as T ann increased in the soft-to-hard magnetic characteristics transition region and rose as the hard crystalline phase started to form. The results show that the magnetic properties of the NdFeB film were slightly influenced by the presence of NdO, film surface roughening and the small increase in crystal size as a consequence of repeated heat treatment. At T ann ∼300 deg. C, the nominal saturation magnetization indicated a certain degree of weak perpendicular magnetic anisotropy in the film sample considered to be essential in the enhancement of coercivity in crystallized films

Structural, mechanical, and magnetic properties of GaFe_3N thin films

International Nuclear Information System (INIS)

Junaid, Muhammad; Music, Denis; Hans, Marcus; Schneider, Jochen M.; Scholz, Tanja; Dronskowski, Richard; Primetzhofer, Daniel

2016-01-01

Using the density-functional theory, the structural, mechanical, and magnetic properties were investigated for different GaFe_3N configurations: ferromagnetic, ferrimagnetic, paramagnetic, and nonmagnetic. Ferrimagnetic and high-spin ferromagnetic states exhibit the lowest energy and are the competing ground states as the total energy difference is 0.3 meV/atom only. All theoretically predicted values could be fully confirmed by experiments. For this, the authors synthesized phase pure, homogeneous, and continuous GaFe_3N films by combinatorial reactive direct current magnetron sputtering. Despite the low melting point of gallium, the authors succeeded in the growth of GaFe_3N films at a temperature of 500 °C. Those thin films exhibit a lattice parameter of 3.794 Å and an elastic modulus of 226 ± 20 GPa. Magnetic susceptibility measurements evidence a magnetic phase transitions at 8.0 ± 0.1 K. The nearly saturated magnetic moment at ±5 T is about 1.6 μB/Fe and is close to the theoretically determined magnetic moment for a ferrimagnetic ordering (1.72 μB/Fe).

Anisotropic behaviour of transmission through thin superconducting NbN film in parallel magnetic field

Energy Technology Data Exchange (ETDEWEB)

Šindler, M., E-mail: sindler@fzu.cz [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Tesař, R. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic); Koláček, J. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Skrbek, L. [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic)

2017-02-15

Highlights: • Transmission through thin NbN film in parallel magnetic field exhibits strong anisotropic behaviour in the terahertz range. • Response for a polarisation parallel with the applied field is given as weighted sum of superconducting and normal state contributions. • Effective medium approach fails to describe response for linear polarisation perpendicular to the applied magnetic field. - Abstract: Transmission of terahertz waves through a thin layer of the superconductor NbN deposited on an anisotropic R-cut sapphire substrate is studied as a function of temperature in a magnetic field oriented parallel with the sample. A significant difference is found between transmitted intensities of beams linearly polarised parallel with and perpendicular to the direction of applied magnetic field.

Development of a tensile-stress-induced anisotropy in amorphous magnetic thin films

International Nuclear Information System (INIS)

Mandal, K.; Vazquez, M.; Garcia, D.; Castano, F.J.; Prados, C.; Hernando, A.

2000-01-01

Magnetic anisotropy was induced in positive magnetostrictive Fe 80 B 20 and negative magnetostrictive Co 75 Si 15 B 10 thin films by developing a tensile stress within the samples. The films were grown on the concave surfaces of mechanically bowed glass substrates. On releasing the substrates from the substrate holders, a tensile stress was developed within the samples that modified the domain structure. As a result of it, a magnetic easy axis parallel to the direction of the stress was induced in FeB sample whereas in CoSiB sample the induced easy axis was perpendicular to the direction of the developed stress. To produce magnetic multilayers with crossed anisotropy, FeB/CoSiB bilayers and FeB/Cu/CoSiB trilayers were grown on bowed substrates. The study of magnetic properties of the multilayers indicates the development of crossed anisotropy within them, particularly when the magnetic layers are separated by a nonmagnetic Cu layer

Thickness dependence of magnetic anisotropy and domains in amorphous Co{sub 40}Fe{sub 40}B{sub 20} thin films grown on PET flexible substrates

Energy Technology Data Exchange (ETDEWEB)

Tang, Zhenhua, E-mail: tangzhenhua1988@163.com [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Ni, Hao [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); College of science, China university of petroleum, Qingdao, Shandong 266580 China (China); Lu, Biao [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Zheng, Ming [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Huang, Yong-An [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Lu, Sheng-Guo, E-mail: sglu@gdut.edu.cn [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Tang, Minghua [Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105 (China); Gao, Ju [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)

2017-03-15

The amorphous Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) films (5–200 nm in thickness) were grown on flexible polyethylene terephthalate (PET) substrates using the DC magnetron-sputtering method. The thickness dependence of structural and magnetic properties of flexible CoFeB thin films was investigated in detail. The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. The results show potential for designing CoFeB-based flexible spintronic devices in which the physical parameters could be tailored by controlling the thickness of the thin film. - Graphical abstract: The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. - Highlights: • The thickness effect on the magnetic properties in amorphous CoFeB thin films grown on flexible substrates was investigated. • The in-plane uniaxial magnetic anisotropy induced by strains was observed. • A critical thickness of ~ 150 nm for the flexible CoFeB thin film on PET substrate was obtained.

Growth and structure of Co/Au magnetic thin films

International Nuclear Information System (INIS)

Marsot, N.

1999-01-01

We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

The magnetic domain structures of Fe thin films on rectangular land-and-groove substrates studied by spin-polarized secondary electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Ueda, S. [Photodynamics Research Center, RIKEN, Aoba-ku, Sendai 980-0845 (Japan)]. E-mail: uedas@postman.riken.go.jp; Iwasaki, Y. [Photodynamics Research Center, RIKEN, Aoba-ku, Sendai 980-0845 (Japan); Micro Systems Network Company, Sony Corporation, Tagajo, Miyagi 985-0842 (Japan); Ushioda, S. [Photodynamics Research Center, RIKEN, Aoba-ku, Sendai 980-0845 (Japan); Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai 980-8577 (Japan)

2004-10-01

The magnetic domain structures of Fe thin films on rectangular land-and-groove structures have been studied by spin-polarized secondary electron microscopy (SP-SEM) under an applied dc field. The coercive force on the land area was found to be higher than that on the groove area in the magnetization reversal due to the difference in surface roughness between land and groove areas. The magnetic domain structure and domain wall pinning behavior during the reversal process depended on the direction of the magnetic field relative to the rectangles. These results show that the anisotropy induced by film geometry also contributes to the magnetization reversal process of thin magnetic films on land{sub a}nd{sub g}roove substrates.

Oxygen-enabled control of Dzyaloshinskii-Moriya Interaction in ultra-thin magnetic films

KAUST Repository

Belabbes, Abderrezak

2016-04-22

The search for chiral magnetic textures in systems lacking spatial inversion symmetry has attracted a massive amount of interest in the recent years with the real space observation of novel exotic magnetic phases such as skyrmions lattices, but also domain walls and spin spirals with a defined chirality. The electrical control of these textures offers thrilling perspectives in terms of fast and robust ultrahigh density data manipulation. A powerful ingredient commonly used to stabilize chiral magnetic states is the so-called Dzyaloshinskii-Moriya interaction (DMI) arising from spin-orbit coupling in inversion asymmetric magnets. Such a large antisymmetric exchange has been obtained at interfaces between heavy metals and transition metal ferromagnets, resulting in spin spirals and nanoskyrmion lattices. Here, using relativistic first-principles calculations, we demonstrate that the magnitude and sign of DMI can be entirely controlled by tuning the oxygen coverage of the magnetic film, therefore enabling the smart design of chiral magnetism in ultra-thin films. We anticipate that these results extend to other electronegative ions and suggest the possibility of electrical tuning of exotic magnetic phases.

Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

Energy Technology Data Exchange (ETDEWEB)

Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

2008-08-18

We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

Magnetic properties of electroplated nano/microgranular NiFe thin films for rf application

NARCIS (Netherlands)

Zhuang, Y.; Vroubel, M.; Rejaei, B.; Burghartz, J.N.; Attenborough, K.

2005-01-01

A granular NiFe thin film with large in-plane magnetic anisotropy and high ferromagnetic-resonance frequency developed for radio-frequency integrated circuit (IC) applications is presented. During the deposition, three-dimensional (3D) growth occurs, yielding NiFe grains (? ? 1.0??m). Nanonuclei (?

Magnetic anisotropies in SmCo thin films

International Nuclear Information System (INIS)

Chen, K.

1993-01-01

A systemic study of the deposition processes and magnetic properties for the Sm-Co film system has been carried out. Films of Sm-Co system with various magnetic anisotropies have been synthesized through sputter deposition in both crystalline and amorphous phases. The origins of various anisotropies have been studied. Thermalized sputter deposition process control was used to synthesize Fe enriched Sm-Co films with rhombohedral Th 2 Zn 17 type structure. The film exhibited unusually strong textures with the crystallographic c axes of the crystallites aligned in the film plane. A large anisotropy was resulted with easy axis in the film plane. A well defined and large in-the-film-plane anisotropy of exceptionally high value of 3.3 x 10 6 erg/cm 3 has been obtained in the amorphous SmCo films by applying a magnetic field in the film plane during deposition. It was found that the in-the-film-plane anisotropy depended essentially on the applied field and Sm concentration. For films not synthesized through thermallized sputtering, the easy axis of the film could reoriented. A perpendicular anisotropy was also presented in the film synthesized through thermallized sputtering deposition. A large in-plane anisotropy was obtained in films deposited above ambient temperatures. It was concluded that the surface induced short range ordering was the origin of the in-the-film-phase anisotropy observed in amorphous film deposited in the presence of a magnetic field. The formation mechanism was different from that of the short range ordering induced by field annealing. The perpendicular anisotropy was shown to be growth induced. Large in-plane anisotropy in amorphous films was resulted form partial crystallization in the film. Both the formation of growth induced structure and partial crystallization in the film prevented the formation of the pair ordering and decreased in-the-film-plane anisotropy

Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Habib, Zubida [National Institute of Technology, Department of Chemistry, Srinagar (India); National Institute of Technology, Department of Physics, Srinagar (India); Ikram, Mohd; Mir, Sajad A. [National Institute of Technology, Department of Physics, Srinagar (India); Sultan, Khalid [Central University of Kashmir, Department of Physics, Srinagar (India); Abida [Govt Degree College for Women, Department of Physics, Anantnag, Kashmir (India); Majid, Kowsar [National Institute of Technology, Department of Chemistry, Srinagar (India); Asokan, K. [Inter University Accelerator Centre, New Delhi (India)

2017-06-15

Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO{sub 3} thin films grown by pulsed laser deposition on LaAlO{sub 3} substrates. Electronic excitations were induced by 200 MeV Ag{sup 12+} ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe{sub 1-x}Ni{sub x}O{sub 3} (x = 0.1 and 0.3) films compared to HoFeO{sub 3} film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

Dynamic magnetization of NiZn ferrite doped FeSiAl thin films fabricated by oblique sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhong, Xiaoxi, E-mail: xiaoxi.zhong@gmail.com [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China); Phuoc, Nguyen N. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore 117411 (Singapore); Soh, Wee Tee [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Ong, C.K. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore 117411 (Singapore); Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Li, Lezhong [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China)

2017-06-15

Highlights: • We prepared NiZn ferrite doped FeSiAl-based thin films using oblique deposition technique. • The magnetic properties of FeSiAl-based thin films were systematically studied. • Two ferromagnetic resonance peaks were observed in the permeability spectra. • The thermal stability of microwave properties of FeSiAl-based films was studied. • The thermal stability of properties we studied was relatively good. - Abstract: In this study, we comprehensively investigate the dynamic magnetic properties of FeSiAl-NiZnFeO thin films prepared by the oblique deposition method via a shorted microstrip perturbation technique. For the films with higher oblique angle and NiZn ferrite doping amount, there are two ferromagnetic resonance peaks observed in the permeability spectra, and both of the two peaks originate from FeSiAl. Furthermore, the magnetic anisotropy field H{sub K} of the ferromagnetic resonance peak at higher frequency is enhanced with increasing doping amount, which is interpreted in terms of the contribution of reinforced stress-induced anisotropy and shape anisotropy brought about by doping elements and oblique sputtering method. In addition, the thermal stability of the ferromagnetic resonance frequency f{sub FMR} of FeSiAl-NiZnFeO films with oblique angles of 35° and 45° with respect to temperature ranging from 300 K to 420 K is deteriorated with increasing ferrite doping amount, which is mainly ascribed to the influence of pair-ordering anisotropy and/or the reduction of the FeSiAl grain size.

Synthesis, structure and magnetic properties of crystallographically aligned CuCr_2Se_4 thin films

International Nuclear Information System (INIS)

Esters, Marco; Liebig, Andreas; Ditto, Jeffrey J.; Falmbigl, Matthias; Albrecht, Manfred; Johnson, David C.

2016-01-01

We report the low temperature synthesis of highly textured CuCr_2Se_4 thin films using the modulated elemental reactant (MER) method. The structure of CuCr_2Se_4 is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr_2Se_4. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr_2Se_4 synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10"6 erg cm"−"3; shape anisotropy: 1.07 × 10"6 erg cm"−"3), with the easy axis lying out of plane, and a larger magnetic moment (6 μ_B/f.u.) than bulk CuCr_2Se_4. - Highlights: • Crystallographically aligned, phase pure CuCr_2Se_4 were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the direction. • The magnetization is larger than bulk CuCr_2Se_4 or other CuCr_2Se_4 films made to date.

PLD growth of CoPd thin films and characterization of their magnetic properties by magneto optical Kerr effect

Science.gov (United States)

Sedrpooshan, Mehran; Ahmadvand, Hossein; Ranjbar, Mehdi; Salamati, Hadi

2018-06-01

CoPd alloy thin films with different thicknesses and Co/Pd ratios have been deposited on Si (100) substrate by pulsed laser deposition (PLD). The magnetic properties were investigated by using the magneto-optical Kerr effect (MOKE) in both longitudinal and polar geometries. The results show that the films with thickness in the range of 6-24 nm, deposited at a low substrate temperature of 200 °C, are mostly magnetized in the plane of film. Higher deposition temperature forces the magnetic easy axis to orient in the perpendicular direction of the films.

Interface alloying in multilayer thin films using polarized neutron reflectometry

International Nuclear Information System (INIS)

Basu, Saibal

2013-01-01

Polarized Neutron Reflectometry (PNR) is an excellent tool to probe magnetic depth profile in multilayer thin film samples. In case of multilayer films with alternating magnetic and non-magnetic layers, PNR can provide magnetic depth profile at the interfaces with better than nanometer resolution. Using PNR and Xray Reflectometry (XRR) together one can obtain chemical composition and magnetic structure, viz. magnetic moment density at interfaces in multilayer films. We have used these two techniques to obtain kinetics of alloy formation at the interfaces and the magnetic nature of the alloy at the interfaces in several important thin films with magnetic/non-magnetic bilayers. These include Ni/Ti, Ni/Al and Si/Ni pairs. Results obtained from these studies will be presented in this talk. (author)

Development of neutron diffuse scattering analysis code by thin film and multilayer film

International Nuclear Information System (INIS)

Soyama, Kazuhiko

2004-01-01

To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

Preparation and Characterization of Silver Liquid Thin Films for Magnetic Fluid Deformable Mirror

Directory of Open Access Journals (Sweden)

Lianchao Zhang

2015-01-01

Full Text Available Silver liquid thin film, formed by silver nanoparticles stacking and spreading on the surface of the liquid, is one of the important parts of magnetic fluid deformable mirror. First, silver nanoparticles were prepared by liquid phase chemical reduction method using sodium citrate as reducing agent and stabilizer and silver nitrate as precursor. Characterization of silver nanoparticles was studied using X-ray diffractometer, UV-vis spectrophotometer, and transmission electron microscope (TEM. The results showed that silver nanoparticles are spherical and have a good monodispersity. Additionally, the effect of the reaction conditions on the particle size of silver is obvious. And then silver liquid thin films were prepared by oil-water two-phase interface technology using as-synthesized silver nanoparticles. Properties of the film were investigated using different technology. The results showed that the film has good reflectivity and the particle size has a great influence on the reflectivity of the films. SEM photos showed that the liquid film is composed of multilayer silver nanoparticles. In addition, stability of the film was studied. The results showed that after being stored for 8 days under natural conditions, the gloss and reflectivity of the film start to decrease.

Influence of the spacer layer on microstructure and magnetic properties of [NdFeB/(NbCu)]xn thin films

Energy Technology Data Exchange (ETDEWEB)

Chiriac, H. [National Institute of R and D for Technical Physics, 47 Mangeron Blvd., 700050 Iasi (Romania); Grigoras, M. [National Institute of R and D for Technical Physics, 47 Mangeron Blvd., 700050 Iasi (Romania); Urse, M. [National Institute of R and D for Technical Physics, 47 Mangeron Blvd., 700050 Iasi (Romania)]. E-mail: urse@phys-iasi.ro

2007-09-15

Some results concerning the influence of the composition and thickness of NbCu spacer layer on the microstructure and magnetic properties of multilayer [NdFeB/(NbCu)]xn films, in view of their utilization for manufacturing the thin film permanent magnets are presented. A comparison between the microstructure and magnetic properties of NdFeB single layer and [NdFeB/(NbCu)]xn multilayer is also presented. The multilayer [NdFeB/(NbCu)]xn thin films with the thickness of the NdFeB layer of 180nm and the thickness of the NbCu spacer layer of 3nm, exhibit good hard magnetic characteristics such as coercive force H{sub c} of about 1510kA/m and the remanence ratio M{sub r}/M{sub s} of about 0.8.

Influence of the spacer layer on microstructure and magnetic properties of [NdFeB/(NbCu)]xn thin films

International Nuclear Information System (INIS)

Chiriac, H.; Grigoras, M.; Urse, M.

2007-01-01

Some results concerning the influence of the composition and thickness of NbCu spacer layer on the microstructure and magnetic properties of multilayer [NdFeB/(NbCu)]xn films, in view of their utilization for manufacturing the thin film permanent magnets are presented. A comparison between the microstructure and magnetic properties of NdFeB single layer and [NdFeB/(NbCu)]xn multilayer is also presented. The multilayer [NdFeB/(NbCu)]xn thin films with the thickness of the NdFeB layer of 180nm and the thickness of the NbCu spacer layer of 3nm, exhibit good hard magnetic characteristics such as coercive force H c of about 1510kA/m and the remanence ratio M r /M s of about 0.8

Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

International Nuclear Information System (INIS)

Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

2015-01-01

One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

Energy Technology Data Exchange (ETDEWEB)

Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

2015-01-01

The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

Transport and magnetism correlations in thin-film ferromagnetic oxides

International Nuclear Information System (INIS)

Hundley, M.F.; Neumeier, J.J.; Heffner, R.H.; Jia, Q.X.; Wu, X.D.; Thompson, J.D.

1995-01-01

In order to determine the T c -dependence of the colossal magnetoresistance (MR) exhibited by the ferromagnetic La 0.7 M 0.3 MnO 3+σ (M = Ba, Ca, Sr) system, the authors examine the magnetic-field and temperature dependent resistivity and magnetization of a series of thin films that were grown via pulsed-laser deposition. The films had magnetic ordering temperatures (T C ) ranging from 150 to 350 K; all samples displayed a large negative MR that is largest near T c . The magnitude of a given sample's MR at T c inversely correlates with T c ; samples with a low T c display significantly larger MR values than do samples with large T c 's. The quantity ρ(T c )/ρ(4 K), the amount by which the resistivity is reduced by full ferromagnetic order, is an activated function of T c with an activation energy E a = 0.1 eV. These results indicate that the magnitude of the CMR effect in a given specimen is controlled not by ρ(T c ), but by T c via the ratio ρ(T c )/ρ(4 K). Phenomenological scaling relationships are also reported that link ρ(H,T) to both H and M(H, T)

Tailoring of Perpendicular Magnetic Anisotropy in Dy13Fe87 Thin Films with Hexagonal Antidot Lattice Nanostructure

Directory of Open Access Journals (Sweden)

Mohamed Salaheldeen

2018-04-01

Full Text Available In this article, the magnetic properties of hexagonally ordered antidot arrays made of Dy13Fe87 alloy are studied and compared with corresponding ones of continuous thin films with the same compositions and thicknesses, varying between 20 nm and 50 nm. Both samples, the continuous thin films and antidot arrays, were prepared by high vacuum e-beam evaporation of the alloy on the top-surface of glass and hexagonally self-ordered nanoporous alumina templates, which serve as substrates, respectively. By using a highly sensitive magneto-optical Kerr effect (MOKE and vibrating sample magnetometer (VSM measurements an interesting phenomenon has been observed, consisting in the easy magnetization axis transfer from a purely in-plane (INP magnetic anisotropy to out-of-plane (OOP magnetization. For the 30 nm film thickness we have measured the volume hysteresis loops by VSM with the easy magnetization axis lying along the OOP direction. Using magnetic force microscopy measurements (MFM, there is strong evidence to suggest that the formation of magnetic domains with OOP magnetization occurs in this sample. This phenomenon can be of high interest for the development of novel magnetic and magneto-optic perpendicular recording patterned media based on template-assisted deposition techniques.

Far-infrared electrodynamics of thin superconducting NbN film in magnetic fields

Czech Academy of Sciences Publication Activity Database

Šindler, Michal; Tesař, Roman; Koláček, Jan; Szabó, P.; Samuely, P.; Hašková, V.; Kadlec, Christelle; Kadlec, Filip; Kužel, Petr

2014-01-01

Roč. 27, č. 5 (2014), 1-8 ISSN 0953-2048 R&D Projects: GA ČR(CZ) GAP204/11/0015; GA MŠk(CZ) LD14060 Institutional support: RVO:68378271 Keywords : superconductivity * thin films * scanning tunneling spectroscopy * time-domain terahertz spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.325, year: 2014

Magnetic ground state of SrRuO3 thin film and applicability of standard first-principles approximations to metallic magnetism.

Science.gov (United States)

Ryee, Siheon; Han, Myung Joon

2017-07-05

A systematic first-principles study has been performed to understand the magnetism of thin film SrRuO 3 which lots of research efforts have been devoted to but no clear consensus has been reached about its ground state properties. The relative t 2g level difference, lattice distortion as well as the layer thickness play together in determining the spin order. In particular, it is important to understand the difference between two standard approximations, namely LDA and GGA, in describing this metallic magnetism. Landau free energy analysis and the magnetization-energy-ratio plot clearly show the different tendency of favoring the magnetic moment formation, and it is magnified when applied to the thin film limit where the experimental information is severely limited. As a result, LDA gives a qualitatively different prediction from GGA in the experimentally relevant region of strain whereas both approximations give reasonable results for the bulk phase. We discuss the origin of this difference and the applicability of standard methods to the correlated oxide and the metallic magnetic systems.

Magnetic domain structure of MnAs thin films as a function of temperature

International Nuclear Information System (INIS)

Mizuguchi, Masaki; Manago, Takashi; Akinaga, Hiroyuki; Kuramochi, Hiromi; Okabayashi, Jun

2003-01-01

We have investigate magnetic domain structures of MnAs thin films grown on GaAs substrates by a magnetic force microscope. We observed, by an atomic force microscope, rectangular defects along GaAs [110] direction which disperse randomly on the surface of MnAs/GaAs(001). The Curie temperature of MnAs is 45degC, and it is successfully confirmed directly by the variable temperature magnetic force microscope observation. We also investigated magnetic domain structures of MnAs/GaAs(111)B, and no apparent relation was observed between the topographic structure and the magnetic domain structure. (author)

Magnetite thin films: A simulational approach

International Nuclear Information System (INIS)

Mazo-Zuluaga, J.; Restrepo, J.

2006-01-01

In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent ν=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed

Effects of strain on the magnetic and transport properties of the epitaxial La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Zarifi, M. [Department of Physics, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Kameli, P., E-mail: kameli@cc.iut.ac.ir [Department of Physics, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Ehsani, M.H. [Department of Physics, Semnan University, Semnan 35195-363 (Iran, Islamic Republic of); Ahmadvand, H.; Salamati, H. [Department of Physics, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)

2016-12-15

The epitaxial strain can considerably modify the physical properties of thin films compared to the bulk. This paper reports the effects of substrate-induced strain on La{sub 0.5}Ca{sub 0.5}MnO{sub 3} (LCMO) thin films, grown on (100) SrTiO{sub 3} (STO) and LaAlO{sub 3} (LAO) substrates by pulsed laser deposition technique. Transport and magnetic properties were found to be strongly dependent on strain type. It is also shown that compressive (tensile) strain leads to the increase (decrease) in the magnetization of the films. Moreover, it was observed that all LCMO films deposited on both LAO and STO substrates behave as an insulator, but LCMO/LAO thin films with compressive strain have lower resistivity than LCMO/STO thin films with tensile strain. Applying magnetic field to LCMO/STO thin films with thickness of 25 and 50 nm leads to very small change in the resistivity, while the effects of magnetic field on the sample with thickness of 125 nm leads to an insulator–metal transition. For LCMO/LAO thin films, the magnetic field has a strong impact on the resistivity of samples. The results show that the magnetoresistance (MR) is enhanced by increasing film thickness for LCMO/LAO samples, due to the relatively stronger phase separation. For LCMO/STO thin films MR is drastically decreased by reduction of film thickness, which is attributed to the enhancement of the charge–orbital order (CO–O) accompanying the complex spin order (the so-called CE type). The changes of the antiferromagnetic structure from the CE to C type and the enhancement of the CE type could be attributed to the in-plane compressive and tensile strain, respectively. - Highlights: • Epitaxial La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films, grown on (100) SrTiO{sub 3} and LaAlO{sub 3} substrates. • The compressive strain leads to the increase in the magnetization of the films. • The tensile strain leads to the decrease in the magnetization of the films. • The magnetoresistance is enhanced by

Study of magnetization reversal processes in a thin Co film

International Nuclear Information System (INIS)

Chowdhury, N.; Bedanta, S.; Babu, G.S.

2013-01-01

The magnetization reversal has been studied both along the easy- and hard- axes for an in plane magnetized thin Cobalt film using magneto-optical Kerr effect (MOKE) microscope. We observe that magnetization reversal is governed by domain wall motion accompanied by nucleation when measured along the easy axis. However coherent rotation is observed during magnetization reversal when measured along the hard axis. The relaxation of magnetization in constant dc magnetic field measured along the easy axis shows exponential behaviour which according to Fatuzzo–Labrune model indicates domain nucleated dominant process. Domain wall velocity plotted as a function of constant dc magnetic field shows creep and slide regime from which the depinning transition was extracted. - Highlights: ► Kerr microscopy was performed for different field orientation to the easy axis. ► Here we have measured domain wall velocity in constant dc fields. ► Creep, depinning and slide modes of domain wall motion have been observed. ► Magnetic relaxation data can be very well fitted to Fatuzzo–Labrune model. ► Magnetization reversal occurs via domain nucleation and wall motion

Thin-Film Power Transformers

Science.gov (United States)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Defects induced magnetic transition in Co doped ZnS thin films: Effects of swift heavy ion irradiations

Energy Technology Data Exchange (ETDEWEB)

Patel, Shiv P., E-mail: shivpoojanbhola@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India); Pivin, J.C. [CSNSM, IN2P3-CNRS, Batiment 108, F-91405 Orsay Campus (France); Patel, M.K; Won, Jonghan [Materials Science and Technology Division, MST-8, P.O.Box 1663, Mail Stop G755, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Chandra, Ramesh [Nanoscience Laboratory, IIC, Indian Institute of Technology, Roorkee 247667 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Lokendra [Physics Department, University of Allahabad, Allahabad 211002 (India)

2012-07-15

The effect of swift heavy ions (SHI) on magnetic ordering in ZnS thin films with Co ions substituted on Zn sites is investigated. The materials have been synthesized by pulsed laser deposition on substrates held at 600 Degree-Sign C for obtaining films with wurtzite crystal structure and it showed ferromagnetic ordering up to room temperature with a paramagnetic component. 120 MeV Ag ions have been used at different fluences of 1 Multiplication-Sign 10{sup 11} ions/cm{sup 2} and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2} for SHI induced modifications. The long range correlation between paramagnetic spins on Co ions was destroyed by irradiation and the material became purely paramagnetic. The effect is ascribed to the formation of cylindrical ion tracks due to the thermal spikes resulting from electron-phonon coupling. - Highlights: Black-Right-Pointing-Pointer Effect of swift heavy ions on magnetic ordering in Co doped ZnS thin films are presented. Black-Right-Pointing-Pointer Magnetization in the pristine films is composed of ferromagnetic and paramagnetic components. Black-Right-Pointing-Pointer The films become purely paramagnetic after swift heavy ions irradiation. Black-Right-Pointing-Pointer The magnetic transition is ascribed to the formation of ion track (or cylindrical defects) due to the thermal spikes.

GALVANIC MAGNETIC PROPERTIES OF BISMUTH THIN FILMS DOPED WITH TELLURIUM MADE BY THERMAL VACUUM EVAPORATION

Directory of Open Access Journals (Sweden)

V. A. Komarov

2013-01-01

Full Text Available The influence of n-type impurity of tellurium (concentration range from 0.005 atomic % Te to 0.15 atomic % Te on galvanic magnetic properties (resistivity, magnetic resistance and Hall constant of Bi thin films with various thicknesses was studied. The properties were measured in temperature range from 77 to 300 K. It was established that the classical size effect in the films is significant and decreases with higher concentration of Te impurity. The analysis of experimental results was carried out in approximation of the law of Jones-Schoenberg dispersion for Bi films doped with tellurium. Calculation of concentration and mobility of charge carriers in the studied films was made.

Planar Hall effect and magnetic anisotropy in epitaxially strained chromium dioxide thin films

NARCIS (Netherlands)

Goennenwein, S.T.B.; Keizer, R.S.; Schink, S.W.; Van Dijk, I.; Klapwijk, T.M.; Miao, G.X.; Xiao, G.; Gupta, A.

2007-01-01

We have measured the in-plane anisotropic magnetoresistance of 100?nm thick CrO2 thin films at liquid He temperatures. In low magnetic fields H, both the longitudinal and the transverse (planar Hall) resistance show abrupt switches, which characteristically depend on the orientation of H. All the

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

Science.gov (United States)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

2008-07-01

Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

Elimination of impurity phase formation in FePt magnetic thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Wang, Ying; Medwal, Rohit; Sehdev, Neeru; Yadian, Boluo; Tan, T.L.; Lee, P.; Talebitaher, A.; Ilyas, Usman; Ramanujan, R.V.; Huang, Yizhong; Rawat, R.S.

2014-01-01

The formation of impurity phases in FePt thin films severely degrades its magnetic properties. The X-ray diffraction patterns of FePt thin films, synthesized using pulsed laser deposition (PLD), showed peaks corresponding to impurity phases, resulting in softer magnetic properties. A systematic investigation was carried to determine the factors that might have led to impurity phase formation. The factors include (i) PLD target composition, (ii) substrate material, (iii) annealing parameters such as temperature, duration and ambience and (iv) PLD deposition parameters such as chamber ambience, laser energy fluence and target–substrate distance. Depositions on the different substrates revealed impurity phase formation only on Si substrates. It was found that the target composition, PLD chamber ambience, and annealing ambience were not the factors that caused the impurity phase formation. The annealing temperature and duration influenced the impurity phases, but are not the cause of their formation. A decrease in the laser energy fluence and increase of the target–substrate distance resulted in elimination of the impurity phases and enhancement in the magnetic and structural properties of FePt thin films. The energy of the ablated plasma species, controlled by the laser energy fluence and the target–substrate distance, is found to be the main factor responsible for the formation of the impurity phases.

Magnetization curves for thin films of layered type-II superconductors, Kolmogorov-Arnold-Moser theory, and the devil's staircase

International Nuclear Information System (INIS)

Burkov, S.E.

1991-01-01

Magnetization curves for a thin-layered superconducting film in parallel magnetic field have been shown to become devil's staircases provided the superconducting layers are perpendicular to the film plane. The transition from an incomplete to a complete devil's staircase with decreasing temperature is predicted. A chain of vortices is described by the generalized Frenkel-Kontorova model

Localized magnetic excitations for a line of magnetic impurities in a transverse Ising thin film ferromagnet

International Nuclear Information System (INIS)

Leite, R.V.; Oliveira Filho, L.O. de; Milton Pereira, J.; Cottam, M.G.; Costa Filho, R.N.

2009-01-01

A Green's function method is used to obtain the spectrum of spin excitations associated with a linear array of magnetic impurities implanted in a ferromagnetic thin film. The equations of motion for the Green's functions of the anisotropic film are written in the framework of the Ising model in a transverse field. The frequencies of localized modes are calculated as a function of the interaction parameters for the exchange coupling between impurity-spin pairs, host-spin pairs, and impurity-host neighbors, as well as the effective field parameter at the impurity sites.

Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

Science.gov (United States)

Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

2018-06-01

The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.

Structural and magnetic properties of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point glasses and application in spin devices

Energy Technology Data Exchange (ETDEWEB)

Misawa, Takahiro; Mori, Sumito [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Komine, Takashi [Faculty of Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511 (Japan); Fujioka, Masaya; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan)

2016-12-30

Graphical abstract: This paper presents the first demonstration of the formation of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point (LSP) glasses used in spin quantum cross (SQC) devices and the theoretical prediction of spin filter effect in Ni{sub 78}Fe{sub 22}-based SQC devices. The fomation of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures was successfully demonstrated using a newly proposed thermal pressing technique. Interestingly, this technique gives rise to both a highly-oriented crystal growth in Ni{sub 78}Fe{sub 22} thin films and a 100-fold enhancement in coercivity, in contrast to those of as-deposited Ni{sub 78}Fe{sub 22} thin films. This remarkable increase in coercivity can be explained by the calculation based on two-dimensional random anisotropy model. These excellent features on structural and magnetic properties allowed us to achieve that the stray magnetic field was uniformly generated from the Ni{sub 78}Fe{sub 22} thin-film edge in the direction perpendicular to the cross section of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures. As we calculated the stray magnetic field generated between the two edges of Ni{sub 78}Fe{sub 22} thin-film electrodes in SQC devices, a high stray field of approximately 5 kOe was generated when the gap distance between two edges of the Ni{sub 78}Fe{sub 22} thin-film electrodes was less than 5 nm and the thickness of Ni{sub 78}Fe{sub 22} was greater than 20 nm. These experimental and calculated results suggest that Ni{sub 78}Fe{sub 22} thin films sandwiched between LSP glasses can be used as electrodes in SQC devices, providing a spin-filter effect, and also our proposed techniques utilizing magnetic thin-film edges will open up new opportunities for the creation of high performance spin devices, such as large magnetoresistance devices and nanoscale spin injectors. Our paper is of strong interest to the broad audience of Applied Surface Science, as it demonstrates that the

Application-related properties of giant magnetostrictive thin films

International Nuclear Information System (INIS)

Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

2002-01-01

In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

Structural, mechanical, and magnetic properties of GaFe{sub 3}N thin films

Energy Technology Data Exchange (ETDEWEB)

Junaid, Muhammad, E-mail: junaid@mch.rwth-aachen.de; Music, Denis, E-mail: music@mch.rwth-aachen.de; Hans, Marcus; Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Scholz, Tanja; Dronskowski, Richard [Institute of Inorganic Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Primetzhofer, Daniel [Department of Physics and Astronomy, Uppsala University, Lägerhyddsvägen 1, S-75120 Uppsala (Sweden)

2016-07-15

Using the density-functional theory, the structural, mechanical, and magnetic properties were investigated for different GaFe{sub 3}N configurations: ferromagnetic, ferrimagnetic, paramagnetic, and nonmagnetic. Ferrimagnetic and high-spin ferromagnetic states exhibit the lowest energy and are the competing ground states as the total energy difference is 0.3 meV/atom only. All theoretically predicted values could be fully confirmed by experiments. For this, the authors synthesized phase pure, homogeneous, and continuous GaFe{sub 3}N films by combinatorial reactive direct current magnetron sputtering. Despite the low melting point of gallium, the authors succeeded in the growth of GaFe{sub 3}N films at a temperature of 500 °C. Those thin films exhibit a lattice parameter of 3.794 Å and an elastic modulus of 226 ± 20 GPa. Magnetic susceptibility measurements evidence a magnetic phase transitions at 8.0 ± 0.1 K. The nearly saturated magnetic moment at ±5 T is about 1.6 μB/Fe and is close to the theoretically determined magnetic moment for a ferrimagnetic ordering (1.72 μB/Fe).

X-ray magnetic absorption in Fe-Tb amorphous thin films

CERN Document Server

Kim, Chan Wook; Watanabe, Yasuhiro

1999-01-01

In order to investigate the magnetic structure of Fe-Tb amorphous thin films, we have performed magnetic circular dichroism (MCD) measurements by using the circularly polarized X-ray at the Fe K- and the Tb L2,3-edges in Fe sub 8 sub 8 Tb sub 1 sub 2 , Fe sub 8 sub 0 Tb sub 2 sub 0 , and Fe sub 6 sub 2 Tb sub 3 sub 8. In all samples, the spin-dependent absorption effects, DELTA mu t, were observed. Also, elementary information was obtained on the spin polarizations of the p- and the d-projected electrons lying in the unoccupied states near the Fermi levels in the samples.

Magnetic properties, domain-wall creep motion, and the Dzyaloshinskii-Moriya interaction in Pt/Co/Ir thin films

Science.gov (United States)

Shepley, Philippa M.; Tunnicliffe, Harry; Shahbazi, Kowsar; Burnell, Gavin; Moore, Thomas A.

2018-04-01

We study the magnetic properties of perpendicularly magnetized Pt/Co/Ir thin films and investigate the domain-wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultrathin films. Measurements of the Co layer thickness dependence of saturation magnetization, perpendicular magnetic anisotropy, and symmetric and antisymmetric (i.e., DM) exchange energies in Pt/Co/Ir thin films have been made to determine the relationship between these properties. We discuss the measurement of the DM interaction by the expansion of a reverse domain in the domain-wall creep regime. We show how the creep parameters behave as a function of in-plane bias field and discuss the effects of domain-wall roughness on the measurement of the DM interaction by domain expansion. Whereas modifications to the creep law with DM field and in-plane bias fields have taken into account changes in the energy barrier scaling parameter α , we find that both α and the velocity scaling parameter v0 change as a function of in-plane bias field.

Laser deposition of SmCo thin film and coating on different substrates

International Nuclear Information System (INIS)

Allocca, L; Bonavolonta, C; Valentino, M; Giardini, A; Lopizzo, T; Morone, A; Verrastro, M F; Viggiano, V

2008-01-01

Thin films and coatings of permanent magnetic materials are very important for different electronic and micromechanical applications. This paper deals with the fabrication, using pulsed laser deposition (PLD) technique, of good quality magnetic SmCo thin films on polycarbonate, steel, silicon and amorphous quartz substrates, for low cost electronic applications like radio frequency identification (RFID) antennas and electromechanical devices for fuel feeding control in the automotive. X-ray fluorescence and magnetic scanning measurements using giant magneto-resistive (GMR) sensors have been performed to study the functional magnetic properties of the deposited thin films.

Reversal of lattice, electronic structure, and magnetism in epitaxial SrCoOx thin films

Science.gov (United States)

Jeen, H.; Choi, W. S.; Lee, J. H.; Cooper, V. R.; Lee, H. N.; Seo, S. S. A.; Rabe, K. M.

2014-03-01

SrCoOx (x = 2.5 - 3.0, SCO) is an ideal material to study the role of oxygen content for electronic structure and magnetism, since SCO has two distinct topotactic phases: the antiferromagnetic insulating brownmillerite SrCoO2.5 and the ferromagnetic metallic perovskite SrCoO3. In this presentation, we report direct observation of a reversible lattice and electronic structure evolution in SrCoOx epitaxial thin films as well as different magnetic and electronic ground states between the topotactic phases.[2] By magnetization measurements, optical absorption, and transport measurements drastically different electronic and magnetic ground states are found in the epitaxially grown SrCoO2.5 and SrCoO3 thin films by pulsed laser epitaxy. First-principles calculations confirm substantial, which originate from the modification in the Co valence states and crystallographic structures. By real-time spectroscopic ellipsometry, the two electronically and magnetically different phases can be reversibly changed by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides. The work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

Structural, optical and magnetic properties of nanocrystalline Co-doped ZnO thin films grown by sol-gel

Energy Technology Data Exchange (ETDEWEB)

Kayani, Zohra Nazir; Shah, Iqra; Zulfiqar, Bareera; Sabah, Aneeqa [Lahore College for Women Univ., Lahore (Pakistan); Riaz, Saira; Naseem, Shahzad [Univ. of the Punjab, Lahore (Pakistan). Centre of Excellence in Solid State Physics

2018-04-01

Cobalt-doped ZnO thin films have been deposited using a sol-gel route by changing the number of coats on the substrate from 6 to 18. This project deals with various film thicknesses by increasing the number of deposited coats. The effect of thickness on structural, magnetic, surface morphology and optical properties of Co-doped ZnO thin film was studied. The crystal structure of the Co-doped ZnO films was investigated by X-ray diffraction. The films have polycrystalline wurtzite hexagonal structures. A Co{sup 2+} ion takes the place of a Zn{sup 2+} ion in the lattice without creating any distortion in its hexagonal wurtzite structure. An examination of the optical transmission spectra showed that the energy band gap of the Co-doped ZnO films increased from 3.87 to 3.97 eV with an increase in the number of coatings on the substrate. Ferromagnetic behaviour was confirmed by measurements using a vibrating sample magnetometer. The surface morphology of thin films was assessed by scanning electron microscope. The grain size on the surface of thin films increased with an increase in the number of coats.

Temperature-dependent magnetism of Fe thin films on ZnSe(0 0 1)

International Nuclear Information System (INIS)

Cantoni, M.; Bertacco, R.; Ciccacci, F.; Puppin, E.; Pinotti, E.; Brenna, M.; Marangolo, M.; Eddrieff, M.; Torelli, P.; Maccherozzi, F.; Fujii, J.; Panaccione, G.

2007-01-01

We present X-ray magnetic circular dichroism (XMCD) and magneto-optical Kerr effect (MOKE) data on the magnetic properties of Fe/ZnSe(0 0 1) thin films at increasing Fe coverage. The magnetic behaviour of the Fe overlayer is superparamagnetic for a coverage up to 6 monolayers whereas, above this threshold, a truly ferromagnetic phase shows up. XMCD and MOKE data show that this behaviour is substantially unchanged in the temperature range 10-300 K for all the investigated coverages: these findings imply that the blocking temperature is definitely below 10 K

A Method for Suppressing Superconductivity of Thin Films

Science.gov (United States)

Suppula, Tarmo; Pekola, Jukka; Kauppinen, Juha

2003-03-01

We have developed a method for suppressing superconductivity of thin films. Thin stripes of cobalt grown by e-gun evaporation and patterned by e-beam lithography were placed in the vicinity of aluminium thin film structures. The cobalt stripes were magnetized at 4.2 K with a superconducting coil and the remanence suppressed superconductivity of the Al stripe at temperatures down to 50 mK at least. The magnetization remained in thermal cycling and in a longer storage at room temperature. Motivation for this work is the Coulomb Blockade Thermometer(CBT)^1 which has to be in a normal state to operate. The CBT sensor contains aluminium which is superconducting at temperatures below 1.4 K. An external magnetic field is not always available or acceptable in cryostats. A small grain of permanent magnet mounted to the sensor is another solution, but suspicious if the sensor is put in strong magnetic fields or if "zero field" environment is required. We have shown that suitably patterned and magnetized Co stripes in the vicinity of tunnel junctions of the CBT can solve this problem. The amount of magnetic material in the sensor, as well as the stray field, is very small. This technique may be useful in other low temperature thin film devices also. 1) Product of Nanoway Ltd.

Effects of buffer layer temperature on the magnetic properties of NdFeB thin film magnets

International Nuclear Information System (INIS)

Kim, Y.B.; Cho, S.H.; Kim, H.T.; Ryu, K.S.; Lee, S.H.; Lee, K.H.; Kapustin, G.A.

2004-01-01

Effects of the buffer layer temperature (T b ) on the magnetic properties and microstructure of [Mo/NdFeB/Mo]-type thin films have been investigated. The Mo-buffer layer with low T b is composed of fine grains while that with high T b has coarse grains. The subsequent NdFeB layer also grows with fine or coarse grains following the buffer layer structure. The NdFeB layer grown on a low T b buffer shows high coercivity and strong perpendicular anisotropy. The best magnetic properties of i H c =1.01 MA/m (12.7 kOe), B r =1.31 T (13.1 kG) and BH max =329 kJ/m 3 (41.4 MGOe) were obtained from the film with T b =400 deg. C

Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

International Nuclear Information System (INIS)

Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

2016-01-14

Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

International Nuclear Information System (INIS)

Sokolov, N. S.; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V.; Maksimova, K. Yu.; Grunin, A. I.; Tabuchi, M.

2016-01-01

Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y 3 Fe 5 O 12 (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films

Experiments and numerical modeling of fast flowing liquid metal thin films under spatially varying magnetic field conditions

Science.gov (United States)

Narula, Manmeet Singh

Innovative concepts using fast flowing thin films of liquid metals (like lithium) have been proposed for the protection of the divertor surface in magnetic fusion devices. However, concerns exist about the possibility of establishing the required flow of liquid metal thin films because of the presence of strong magnetic fields which can cause flow disrupting MHD effects. A plan is underway to design liquid lithium based divertor protection concepts for NSTX, a small spherical torus experiment at Princeton. Of these, a promising concept is the use of modularized fast flowing liquid lithium film zones, as the divertor (called the NSTX liquid surface module concept or NSTX LSM). The dynamic response of the liquid metal film flow in a spatially varying magnetic field configuration is still unknown and it is suspected that some unpredicted effects might be lurking. The primary goal of the research work being reported in this dissertation is to provide qualitative and quantitative information on the liquid metal film flow dynamics under spatially varying magnetic field conditions, typical of the divertor region of a magnetic fusion device. The liquid metal film flow dynamics have been studied through a synergic experimental and numerical modeling effort. The Magneto Thermofluid Omnibus Research (MTOR) facility at UCLA has been used to design several experiments to study the MHD interaction of liquid gallium films under a scaled NSTX outboard divertor magnetic field environment. A 3D multi-material, free surface MHD modeling capability is under development in collaboration with HyPerComp Inc., an SBIR vendor. This numerical code called HIMAG provides a unique capability to model the equations of incompressible MHD with a free surface. Some parts of this modeling capability have been developed in this research work, in the form of subroutines for HIMAG. Extensive code debugging and benchmarking exercise has also been carried out. Finally, HIMAG has been used to study the

The Role of Annealing Temperature on Structural and Magnetic Properties of NdFeB Thin Films

Directory of Open Access Journals (Sweden)

A. Khanjani

2016-06-01

Full Text Available In the present research NdFeB thin films coupled with buffer and capping layer of W were formed on Si/SiO2 substrate by means of RF magnetron sputtering. The system was annealed at vaccum at different temperatures of 450, 500, 550,. 600 and 650 °C Phase analysis was carried out by XRD and it was found that NdFeB was formed without the formation of any kind of secondary phase. The cross sectional and grain size of the thin films were measured by scanning electron microscopy. Morphological studies were performed by atomic force microscopy. Magnetic properties of thin films including coercivity, saturation of magnetization and hysteresis area were evcaluated by vibrating sample magnetometer. It was found that by annealing at 400 °C the amorphous layer was formed.The highest intensity of peaks was formed at 550 °C and with an increase in temperature the intensity was declined. The grain size was increased by temperature and had an impact on the coercivity. With an increase of temperature up to 600 °C, perpendicular coercivity was increased and then by further increase of temperatute, coercivity was reduced. Based on the obtained data the temperature of 600 °C was selected as the optimum annealing temperature for reaching enhanced structural and magnetic feature.

Polarization enhancement and ferroelectric switching enabled by interacting magnetic structures in DyMnO3 thin films

KAUST Repository

Lu, Chengliang; Dong, Shuai; Xia, Zhengcai; Luo, Hui; Yan, Zhibo; Wang, Haowen; Tian, Zhaoming; Yuan, Songliu; Wu, Tao; Liu, Junming

2013-01-01

magnetically induced electric polarization and its remarkable response to magnetic field (an enhancement of ?800% upon a field of 2 Tesla at 2 K) in DyMnO3 thin films grown on Nb-SrTiO3 substrates. Accompanying with the large polarization enhancement

Study of the magnetic anisotropy in Ni/Cu and Ni/glass thin films

International Nuclear Information System (INIS)

Cherif, S.-M.; Layadi, A.; Ben Youssef, J.; Nacereddine, C.; Roussigne, Y.

2007-01-01

The magnetic properties of evaporated Ni/Cu and Ni/glass thin films have been investigated by means of the vibrating sample magnetometer (VSM), the Brillouin light scattering (BLS) and magnetic force microscopy (MFM). The Ni thickness, t, ranges from 31 to 165 nm. The second- and fourth-order magnetic anisotropy constants, K 1 and K 2 , have been included; for the Ni/Cu series, K 1 was found to decrease from 1.0x10 6 to 0.18x10 6 erg/cm 3 as t increases from 31 to 165 nm, while K 2 increased from 0.24x10 6 to 0.8x10 6 erg/cm 3 . Over all the thickness range, the magnetization easy axis is in plane. For thinner films, there is a good agreement between anisotropy constant values inferred from VSM and BLS. Stripe domains were observed for t≥165 nm in Ni/glass and t≥90 nm in Ni/Cu

Broadband strip-line ferromagnetic resonance spectroscopy of soft magnetic CoFeTaZr patterned thin films

Science.gov (United States)

Gupta, S.; Kumar, D.; Jin, T. L.; Nongjai, R.; Asokan, K.; Ghosh, A.; Aparnadevi, M.; Suri, P.; Piramanayagam, S. N.

2018-05-01

In this paper, magnetic and magnetization dynamic properties of compositionally patterned Co46Fe40Ta9Zr5 thin films are investigated. A combination of self-assembly and ion-implantation was employed to locally alter the composition of Co46Fe40Ta9Zr5 thin film in a periodic manner. 20 keV O+ and 60 keV N+ ions were implanted at different doses in order to modify the magnetization dynamic properties of the samples in a controlled fashion. Magnetic hysteresis loop measurements revealed significant changes in the coercivity for higher influences of 5 × 1016 ions per cm2. In particular, N+ implantation was observed to induce two phase formation with high and low coercivities. Broadband strip-line ferromagnetic resonance spectroscopy over wide range of frequency (8 - 20 GHz) was used to study the magnetization dynamics as a function of ion-beam dosage. With higher fluences, damping constant showed a continuous increase from 0.0103 to 0.0430. Such control of magnetic properties at nano-scale using this method is believed to be useful for spintronics and microwave device applications.

Flexible thin film magnetoimpedance sensors

International Nuclear Information System (INIS)

Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

2016-01-01

Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

Flexible thin film magnetoimpedance sensors

Energy Technology Data Exchange (ETDEWEB)

Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

2016-10-01

Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

Magnetic anisotropy in iron thin films evaporated under ultra-high vacuum

International Nuclear Information System (INIS)

Dinhut, J.F.; Eymery, J.P.; Krishnan, R.

1992-01-01

α-iron thin films with thickness ranging between 20 and 1500 nm have been evaporated using an electron gun under ultra-high vacuum conditions (5.10 -7 P). The columnar structure observed in cross-sectional TEM is related to the large surface diffusion. From Moessbauer spectra the spin orientation is deduced and found to be influenced by the column axis. Spins can be obtained perpendicularly to the film plane by rotating the substrte during the deposition. The magnetization of the samples is reduced by about 30% and the reduction attributed to the interstitial space which increases with the incident angle. The substrate rotation also decreases Ku( parallel ) by a factor 2 and increases Ku( perpendicular to ). (orig.)

Role of the substrate on the magnetic anisotropy of magnetite thin films grown by ion-assisted deposition

International Nuclear Information System (INIS)

Prieto, Pilar; Prieto, José Emilio; Gargallo-Caballero, Raquel; Marco, José Francisco; Figuera, Juan de la

2015-01-01

Graphical abstract: - Highlights: • The magnetic anisotropy of magnetite thin films is controlled by the substrate induced microstructure. • Single-crystal oxide substrates induce fourfold in-plane magnetic anisotropy • MgO and SrTiO_3 substrates show the same magnetic behavior despite its different mismatch with Fe_3O_4 films. • Silicon and glass substrates induce in-plane magnetic isotropy and uniaxial anisotropy, respectively. - Abstract: Magnetite (Fe_3O_4) thin films were deposited on MgO (0 0 1), SrTiO_3 (0 0 1), LaAlO_3 (0 0 1) single crystal substrates as well on as silicon and amorphous glass in order to study the effect of the substrate on their magnetic properties, mainly the magnetic anisotropy. We have performed a structural, morphological and compositional characterization by X-ray diffraction, atomic force microscopy and Rutherford backscattering ion channeling in oxygen resonance mode. The magnetic anisotropy has been investigated by vectorial magneto-optical Kerr effect. The results indicate that the magnetic anisotropy is especially influenced by the substrate-induced microstructure. In-plane isotropy and uniaxial anisotropy behavior have been observed on silicon and glass substrates, respectively. The transition between both behaviors depends on grain size. For LaAlO_3 substrates, in which the lattice mismatch between the Fe_3O_4 films and the substrate is significant, a weak in-plane fourfold magnetic anisotropy is induced. However when magnetite is deposited on MgO (0 0 1) and SrTiO_3 (0 0 1) substrates, a well-defined fourfold in-plane magnetic anisotropy is observed with easy axes along [1 0 0] and [0 1 0] directions. The magnetic properties on these two latter substrates are similar in terms of magnetic anisotropy and coercive fields.

Magnetization in permalloy thin films

Indian Academy of Sciences (India)

Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron ... alloys of Ni and Fe) take an important place. NiFe alloy with a ... room temperature (∼298 K, without intentional heating) on Si(100) substrates. A base pressure of 1×10−6 mbar was achieved prior to the deposition. Three different ...

Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

KAUST Repository

Baras, Abdulaziz

2011-07-01

Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

International Nuclear Information System (INIS)

Drera, G.; Mozzati, M.C.; Colombi, P.; Salvinelli, G.; Pagliara, S.; Visentin, D.; Sangaletti, L.

2015-01-01

Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al 2 O 3 substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al 2 O 3 substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Drera, G. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Mozzati, M.C. [CNISM, Dipartimento di Fisica, Università di Pavia, Via Bassi 6, 27100 Pavia (Italy); Colombi, P. [CSMT Gestione s.c.a.r.l, Via Branze 45, 25123 Brescia (Italy); Salvinelli, G.; Pagliara, S.; Visentin, D. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Sangaletti, L., E-mail: sangalet@dmf.unicatt.it [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy)

2015-09-01

Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al{sub 2}O{sub 3} substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al{sub 2}O{sub 3} substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions.

Ferrimagnetic Tb-Fe Alloy Thin Films: Composition and Thickness Dependence of Magnetic Properties and All-Optical Switching

Directory of Open Access Journals (Sweden)

Birgit eHebler

2016-02-01

Full Text Available Ferrimagnetic rare earth - transition metal Tb-Fe alloy thin films exhibit a variety of different magnetic properties, which depends strongly on composition and temperature. In this study, first the influence of the film thickness (5 - 85 nm on the sample magnetic properties was investigated in a wide composition range between 15 at.% and 38 at.% of Tb. From our results, we find that the compensation point, remanent magnetization, and magnetic anisotropy of the Tb-Fe films depend not only on the composition but also on the thickness of the magnetic film up to a critical thickness of about 20-30 nm. Beyond this critical thickness, only slight changes in magnetic properties are observed. This behavior can be attributed to a growth-induced modification of the microstructure of the amorphous films, which affects the short range order. As a result, a more collinear alignment of the distributed magnetic moments of Tb along the out-of-plane direction with film thickness is obtained. This increasing contribution of the Tb sublattice magnetization to the total sample magnetization is equivalent to a sample becoming richer in Tb and can be referred to as an effective composition. Furthermore, the possibility of all-optical switching, where the magnetization orientation of Tb-Fe can be reversed solely by circularly polarized laser pulses, was analyzed for a broad range of compositions and film thicknesses and correlated to the underlying magnetic properties.

Magnetically engineered smart thin films: toward lab-on-chip ultra-sensitive molecular imaging.

Science.gov (United States)

Hassan, Muhammad A; Saqib, Mudassara; Shaikh, Haseeb; Ahmad, Nasir M; Elaissari, Abdelhamid

2013-03-01

Magnetically responsive engineered smart thin films of nanoferrites as contrast agent are employed to develop surface based magnetic resonance imaging to acquire simple yet fast molecular imaging. The work presented here can be of significant potential for future lab-on-chip point-of-care diagnostics from the whole blood pool on almost any substrates to reduce or even prevent clinical studies involve a living organism to enhance the non-invasive imaging to advance the '3Rs' of work in animals-replacement, refinement and reduction.

Thin Film Magnetless Faraday Rotators for Compact Heterogeneous Integrated Optical Isolators (Postprint)

Science.gov (United States)

2017-06-15

AFRL-RX-WP-JA-2017-0348 THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL ISOLATORS (POSTPRINT) Dolendra Karki...Interim 9 May 2016 – 1 December 2016 4. TITLE AND SUBTITLE THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL...transfer of ultra-compact thin-film magnetless Faraday rotators to silicon photonic substrates. Thin films of magnetization latching bismuth

Hall effect of K-doped superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

2013-09-15

We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

Dynamics and morphology of chiral magnetic bubbles in perpendicularly magnetized ultra-thin films

Science.gov (United States)

Sarma, Bhaskarjyoti; Garcia-Sanchez, Felipe; Nasseri, S. Ali; Casiraghi, Arianna; Durin, Gianfranco

2018-06-01

We study bubble domain wall dynamics using micromagnetic simulations in perpendicularly magnetized ultra-thin films with disorder and Dzyaloshinskii-Moriya interaction. Disorder is incorporated into the material as grains with randomly distributed sizes and varying exchange constant at the edges. As expected, magnetic bubbles expand asymmetrically along the axis of the in-plane field under the simultaneous application of out-of-plane and in-plane fields. Remarkably, the shape of the bubble has a ripple-like part which causes a kink-like (steep decrease) feature in the velocity versus in-plane field curve. We show that these ripples originate due to the nucleation and interaction of vertical Bloch lines. Furthermore, we show that the Dzyaloshinskii-Moriya interaction field is not constant but rather depends on the in-plane field. We also extend the collective coordinate model for domain wall motion to a magnetic bubble and compare it with the results of micromagnetic simulations.

Crystallization and atomic diffusion behavior of high coercive Ta/Nd-Fe-B/Ta-based permanent magnetic thin film

Energy Technology Data Exchange (ETDEWEB)

Tian, Na; Zhang, Xiao; You, Caiyin; Fu, Huarui [Xi' an University of Technology, School of Materials Science and Engineering, Xi' an (China); Shen, Qianlong [Logistics University of People' s Armed Police Force, Tianjin (China)

2017-06-15

A high coercivity of about 20.4 kOe was obtained through post-annealing the sputtered Ta/Nd-Fe-B/Ta-based permanent magnetic thin films. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analyses were performed to investigate the crystallization and atomic diffusion behaviors during post-annealing. The results show that the buffer and capping Ta layers prefered to intermix with Fe and B atoms, and Nd tends to be combined with O atoms. The preferred atomic combination caused the appearance of the soft magnetic phase of Fe-Ta-B, resulting in a kink of the second quadratic magnetic hysteresis loop. The preferred atomic diffusion and phase formation of the thin films were well explained in terms of the formation enthalpy of the various compounds. (orig.)

The Influence of Doping with Transition Metal Ions on the Structure and Magnetic Properties of Zinc Oxide Thin Films

Directory of Open Access Journals (Sweden)

Jenica Neamtu

2014-01-01

Full Text Available Zn1−xNixO (x=0.03÷0.10 and Zn1−xFexO (x=0.03÷0.15 thin films were synthesized by sol-gel method. The structure and the surface morphology of zinc oxide thin films doped with transition metal (TM ions have been investigated by X-ray diffraction (XRD and atomic force microscopy (AFM. The magnetic studies were done using vibrating sample magnetometer (VSM at room temperature. Experimental results revealed that the substitution of Ni ions in ZnO wurtzite lattice for the contents x=0.03÷0.10 (Ni2+ leads to weak ferromagnetism of thin films. For Zn1-xFexO with x=0.03÷0.05, the Fe3+ ions are magnetic coupling by superexchange interaction via oxygen ions in wurtzite structure. For x=0.10÷0.15 (Fe3+ one can observe the increasing of secondary phase of ZnFe2O4 spinel. The Zn0.9Fe0.1O film shows a superparamagnetic behavior due to small crystallite sizes and the net spin magnetic moments arisen from the interaction between the iron ions through an oxygen ion in the spinel structure.

Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System

DEFF Research Database (Denmark)

Niu, Wei; Liu, Wenqing; Gu, Min

2018-01-01

that play a decisive role in the emergence of ferromagnetism in the otherwise antiferromagnetic LaMnO3 thin films are found. Combining spatially resolved electron energy‐loss spectroscopy, X‐ray absorption spectroscopy, and X‐ray magnetic circular dichroism techniques, it is determined unambiguously...... provide a hitherto‐unexplored multivalence state of Mn on the emergent magnetism in undoped manganite epitaxial thin films, such as LaMnO3 and BiMnO3, and shed new light on all‐oxide spintronic devices....

Phosphorus-doped thin silica films characterized by magic-angle spinning nuclear magnetic resonance spectroscopy

DEFF Research Database (Denmark)

Jacobsen, H.J.; Skibsted, J.; Kristensen, Martin

2001-01-01

Magic-angle spinning nuclear magnetic resonance spectra of 31P and 29Si have been achieved for a thin silica film doped with only 1.8% 31P and deposited by plasma enhanced chemical vapor deposition on a pure silicon wafer. The observation of a symmetric 31P chemical shift tensor is consistent...

Structural and magnetic characterization of mixed valence Co(II, III)xZn1−xO epitaxial thin films

International Nuclear Information System (INIS)

Negi, D.S.; Loukya, B.; Dileep, K.; Sahu, R.; Shetty, S.; Kumar, N.; Ghatak, J.; Pachauri, N.; Gupta, A.; Datta, R.

2014-01-01

In this article, we report on the Co atom incorporation, secondary phase formation and composition-dependent magnetic and optical properties of mixed valence Co(II, III) x Zn 1−x O epitaxial thin films grown by pulsed laser deposition. The intended total Co concentration is varied between ∼6–60 at.% with relatively higher concentration of +3 over +2 charge state. Mixed valence Co(II, III) shows high solubility in ZnO (up to 38 at.%) and ferromagnetism is observed in samples with total Co incorporation of ∼29 and 38 at.%. Electron diffraction pattern and high resolution transmission electron microscopy images reveal single crystalline nature of the thin films with wurtzite structure. Co oxide interlayer, with both rock salt and spinel structure, are observed to be formed between the substrate and wurtzite film for total Co concentration at ∼17 at.% and above. Magnetization shows composition dependence with a saturation moment value of ∼93 emu cm −3 and a coercive field of ∼285 Oe observed for ∼38 at.% Co:ZnO films. Ferromagnetism was not observed for films with Co concentration 17 and 9 at.%. The Co oxide interlayer does not show any ferromagnetism. All the films are n-type with carrier concentration ∼10 19 cm −3 . The observed magnetism is probably resulting from direct antiferromagntic exchange interaction between Co 2+ and Co 3+ ions favored by heavy Co alloying giving rise to ferrimagnetism in the system. - Highlights: • Mixed valence Co doped ZnO ferromagnetic single crystal thin film. • Secondary phase formation in terms of CoO and Co3O4 and magnetism is observed only for high Co alloying. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations

Growth, structure and magnetic properties of magnetron sputtered FePt thin films

Energy Technology Data Exchange (ETDEWEB)

Cantelli, Valentina

2010-07-01

The L1{sub 0} FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L1{sub 0} phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt-L1{sub 0} selforganized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substrates were investigated. The work is focused on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (cosputtering vs. layer - by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3-3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320{+-}20) C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L1{sub 0}-FePt films were obtained on a-SiO{sub 2} after vacuum annealing. L1{sub 0}-FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa). The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects. An extensive study with different synchrotron X-ray scattering techniques, mainly

Thin-Film Magnetic-Field-Response Fluid-Level Sensor for Non-Viscous Fluids

Science.gov (United States)

Woodard, Stanley E.; Shams, Qamar A.; Fox, Robert L.; Taylor, Bryant D.

2008-01-01

An innovative method has been developed for acquiring fluid-level measurements. This method eliminates the need for the fluid-level sensor to have a physical connection to a power source or to data acquisition equipment. The complete system consists of a lightweight, thin-film magnetic-field-response fluid-level sensor (see Figure 1) and a magnetic field response recorder that was described in Magnetic-Field-Response Measurement-Acquisition System (LAR-16908-1), NASA Tech Briefs, Vol. 30, No. 6 (June 2006), page 28. The sensor circuit is a capacitor connected to an inductor. The response recorder powers the sensor using a series of oscillating magnetic fields. Once electrically active, the sensor responds with its own harmonic magnetic field. The sensor will oscillate at its resonant electrical frequency, which is dependent upon the capacitance and inductance values of the circuit.

The temperature dependence of magnetic anisotropy of Nd-Fe-B thin films

Science.gov (United States)

Sato, Takuya; Hashimoto, Ryuji; Tanaka, Yoshitomo; Suzuki, Kenichi; Enokido, Yasushi; Choi, Kyung-Ku; Suzuki, Takao

2018-05-01

The magnetic properties of Nd-Fe-B thin films with the three different compositions (#1: Nd12.6Fe81.5B5.9, #2: Nd14.6Fe78.1B7.4 and #3: Nd22.6Fe66.2B11.2) are discussed. With increasing Nd content, the c-axis orientation along the film normal is enhanced. It is found that sample #2 possesses the saturation magnetization Ms very close to that for Nd2Fe14B over a temperature range from 100 to about 300K. The magnetic anisotropy constant Ku2 for sample #2 is the highest among those samples, but smaller by about 20%, as compared to that for Nd2Fe14B. It is of interest to note that the temperature TR at which Ku1 changes its sign is lower by about 30K as compared to that previously reported for Nd2Fe14B. The reason for this discrepancy is not clear, but could be due to the presence of the minority phases of Nd-rich compounds and also a possible contribution of the magneto-elastic effect to the net magnetic anisotropy.

Annealing behaviour of structural and magnetic properties of evaporated Co thin films

International Nuclear Information System (INIS)

Jergel, M; Halahovets, Y; Siffalovic, P; Mat'ko, I; Senderak, R; Majkova, E; Luby, S; Cheshko, I; Protsenko, S

2009-01-01

Cobalt thin films of 50 nm nominal thickness were e-beam evaporated on silicon substrates covered with thermal oxide. Two series of independent and cumulative vacuum annealings up to 600 deg. C and 650 deg. C, respectively, were performed. The x-ray diffraction, specular and non-specular x-ray reflectivity and longitudinal magneto-optical Kerr effect measurements were applied to probe the annealing behaviour of the film structure and magnetic properties. A gradual transition from the hexagonal close-packed (hcp) to the face-centred cubic (fcc) structure was observed. Evolution of the in-plane magnetic anisotropy is dominated by residual stresses which relax during the structural transformation. The coercivity follows the stress behaviour in the hcp phase up to 300 deg. C and increases abruptly above 400 deg. C due to improving the magneto-crystalline anisotropy in the growing fcc crystallites and enhanced surface/interface roughness.

Formation of CdS thin films in a chemical bath environment under the action of an external magnetic field

International Nuclear Information System (INIS)

Vaskes-Luna, Kh.G.; Zekhe, A.; Nhukhil'o-Garsiya, M.P.; Starostenko, O.

2000-01-01

The effect of external magnetic field on obtaining thin CdS films on glass sub layers through the method of chemical deposition from the cadmium chloride aqueous solution is studied. The intensity and direction of the magnetic field during deposition obviously affect the number of physical properties of polycrystalline films: thickness, grain size and optical quality. The films characteristics are studied through an atomic-power microscope, light absorption spectroscopy and conductometry in darkness. The results obtained are interpreted on the basis of notions on the cadmium and sulfur specific interaction in the chemical bath with a magnetic field [ru

Surface, interface and thin film characterization of nano-materials using synchrotron radiation

International Nuclear Information System (INIS)

Kimura, Shigeru; Kobayashi, Keisuke

2005-01-01

From the results of studies in the nanotechnology support project of the Ministry of Education, Culture, Sports, Science and Technology of Japan, several investigations on the surface, interface and thin film characterization of nano-materials are described; (1) the MgB 2 thin film by X-ray diffraction, (2) the magnetism of the Pt thin film on a Co film by X-ray magnetic circular dichroism measurement, (3) the structure and physical properties of oxygen molecules absorbed in a micro hole of the cheleted polymer crystal by the direct observation in X-ray powder diffraction, and (4) the thin film gate insulator with a large dielectric constant, thermally treated HfO 2 /SiO 2 /Si, by X-ray photoelectron spectroscopy. (M.H.)

Magnetic domain structures of La0.67Sr0.33MnO3 thin films with different morphologies

International Nuclear Information System (INIS)

Lecoeur, P.; Trouilloud, P.L.; Xiao, G.; Gupta, A.; Gong, G.Q.; Li, X.W.

1997-01-01

Using a wide-field Kerr microscope, we have studied the magnetic domain structures of epitaxial and polycrystalline La 0.67 Sr 0.33 MnO 3 thin films as well as a film having thermally induced left-angle 110 right-angle microcracks. The epitaxial film on a (001) SrTiO 3 substrate has different magnetic domain behaviors for in-plane fields applied along the left-angle 100 right-angle and left-angle 110 right-angle directions. Magnetic domain orientation and contrast suggest a biaxial magnetic anisotropy with left-angle 110 right-angle easy axes. Defects such as microcracks and grain boundaries have a strong perturbing effect on the local magnetization and can lead to an enhanced and controllable spin-dependent scattering. copyright 1997 American Institute of Physics

12. International conference on thin films (ICTF 12). Book of Abstract

International Nuclear Information System (INIS)

Majkova, E.

2002-09-01

The publication has been set up as a proceedings of the conference dealing with thin films production and study of their properties. The conference was focused on the following topics: (1) Advanced deposition techniques; (2) Thin Film Growth; (3) Diagnostics, Structure - Properties Relationship; (4) Mechanical Properties and Stress; (5) Protective and Functional Coatings; (6) Micropatterning and Nanostructures; (7) EUV and Soft X-Ray Multilayers; (8) Magnetic Thin Films and Multilayers; (9) Organic Thin Films; (10) Thin Films for Electronics and Optics. In this proceedings totally 157 abstracts are published of which 126 are interest for INIS

Study of the magnetic anisotropy in Ni/Cu and Ni/glass thin films

Energy Technology Data Exchange (ETDEWEB)

Cherif, S.-M. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse, 93340 (France); Layadi, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria)]. E-mail: a_layadi@yahoo.fr; Ben Youssef, J. [Laboratoire de Magnetisme de Bretagne, U.B.O., Brest 29238 (France); Nacereddine, C. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Roussigne, Y. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse, 93340 (France)

2007-01-01

The magnetic properties of evaporated Ni/Cu and Ni/glass thin films have been investigated by means of the vibrating sample magnetometer (VSM), the Brillouin light scattering (BLS) and magnetic force microscopy (MFM). The Ni thickness, t, ranges from 31 to 165 nm. The second- and fourth-order magnetic anisotropy constants, K {sub 1} and K {sub 2}, have been included; for the Ni/Cu series, K {sub 1} was found to decrease from 1.0x10{sup 6} to 0.18x10{sup 6} erg/cm{sup 3} as t increases from 31 to 165 nm, while K {sub 2} increased from 0.24x10{sup 6} to 0.8x10{sup 6} erg/cm{sup 3}. Over all the thickness range, the magnetization easy axis is in plane. For thinner films, there is a good agreement between anisotropy constant values inferred from VSM and BLS. Stripe domains were observed for t{>=}165 nm in Ni/glass and t{>=}90 nm in Ni/Cu.

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

Directory of Open Access Journals (Sweden)

L. J. Collins-McIntyre

2014-12-01

Full Text Available We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE, investigated by x-ray diffraction (XRD, atomic force microscopy (AFM, SQUID magnetometry and x-ray magnetic circular dichroism (XMCD. Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS, and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μB/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μB/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L2,3 edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

Characterization of thin films with synchrotron radiation in SPring-8

International Nuclear Information System (INIS)

Komiya, Satoshi

2005-01-01

Many studies about thin films by using synchrotron radiation in SPring-8 were reviewed. Structural analyses and assessment of thin films used for electronics, and also assessment of insulating films for the gate used in LSI were carried out. Film thickness, unevenness, and density of SiO 2 films in order of nanomer thickness were determined by interference fringes of x-ray reflection curves. The interface structure of (SiO 2 /Si) films was studied by x-ray crystal truncation rod scattering, and the correlation between leakage character depending on nitrogen concentration and interface structure was clarified on SiON film. The oxygen concentration in HfO films in nanometer thickness was determined by x-ray fluorescence analysis, and the interface reaction for HfO 2 /SiO 2 was clearly observed by electron spectroscopy. The structure of amorphous thin films with large dielectric constant was analyzed by x-ray absorption fine structure (XAFS) spectrum. Devices fabricated from multi-layer films showing giant magnetic resistance were developed for hard disk with a large memory. The character of giant magnetic resistance was governed by multi-layer thin film structure piled up by magnetic and nonmagnetic polycrystalline thin metals. For the multi-layer structure, the concentration distribution of constituent elements was determined to the direction of film thickness by x-ray reflection analysis and grazing incident x-ray fluorescence analysis. In the semiconductor laser source, Ga 1-x In x N, used for DVD, the local structure around In ions was studied by XAFS since constituent instability, especially overpopulation of In element, caused the deterioration of lifetime and light emission of the laser. The lattice constant of the light emission layer in InGaAs was measured by x-ray micro-beams. (author)

Structural, optical and magnetic properties of Mn doped ZnO thin films prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Aravind, Arun, E-mail: aruncusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Jayaraj, M.K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Kumar, Mukesh; Chandra, Ramesh [Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee 247 667, Uttarakhand (India)

2012-08-01

Highlights: Black-Right-Pointing-Pointer Defect induced Raman active modes in Mn doped ZnO thin films. Black-Right-Pointing-Pointer Room temperature ferromagnetism. Black-Right-Pointing-Pointer Morphological variations of ZnO thin films with Mn doping. Black-Right-Pointing-Pointer Variation of refractive index of ZnO thin films with Mn doping. - Abstract: Zn{sub 1-x}Mn{sub x}O thin films were grown by pulsed laser deposition. The phase purity and the structure were confirmed by X-ray diffraction studies. The films have a transmittance more than 80% in the visible region. The refractive index of Zn{sub 0.90}Mn{sub 0.10}O films is found to be 1.77 at 550 nm. The presence of non-polar E{sub 2}{sup high} and E{sub 2}{sup low} Raman modes in thin films indicates that 'Mn' doping does not change the wurtzite structure of ZnO. Apart from the normal modes of ZnO the Zn{sub 1-x}Mn{sub x}O ceramic targets show two additional modes at 332 cm{sup -1} (I{sub 1}) and 524 cm{sup -1} (I{sub 2}). The broad Raman peaks (340-600 cm{sup -1}) observed Zn{sub 0.90}Mn{sub 0.10}O thin films can be deconvoluted into five peaks, denoted as P{sub 1}-P{sub 5}. The possible origins of Raman peaks in Zn{sub 1-x}Mn{sub x}O films are the structural disorder and morphological change caused by the Mn dopant. The B{sub 1}{sup low}, {sup 2}B{sub 1}{sup low}, B{sub 1}{sup high} and A{sub 1}{sup LO} modes as well as the surface phonon mode have been observed in heavily Mn-doped ZnO films. Zn{sub 0.98}Mn{sub 0.02}O thin film shows room temperature ferromagnetism. The saturation magnetic moment of the Zn{sub 0.98}Mn{sub 0.02}O thin film is 0.42{mu}{sub B}/Mn atom. The undoped ZnO film prepared under the same condition shows diamagnetic nature. At higher doping concentrations the formation of Mn clusters suppress the room temperature ferromagnetism in Zn{sub 1-x}Mn{sub x}O thin films and shows paramagnetism. XPS confirms the incorporation of Mn{sup 2+} into the ZnO lattice.

Synthesis, structure and magnetic properties of crystallographically aligned CuCr{sub 2}Se{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Esters, Marco [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Liebig, Andreas [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Ditto, Jeffrey J.; Falmbigl, Matthias [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Albrecht, Manfred [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Johnson, David C., E-mail: davej@uoregon.edu [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States)

2016-06-25

We report the low temperature synthesis of highly textured CuCr{sub 2}Se{sub 4} thin films using the modulated elemental reactant (MER) method. The structure of CuCr{sub 2}Se{sub 4} is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr{sub 2}Se{sub 4}. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the <111> axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr{sub 2}Se{sub 4} synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10{sup 6} erg cm{sup −3}; shape anisotropy: 1.07 × 10{sup 6} erg cm{sup −3}), with the easy axis lying out of plane, and a larger magnetic moment (6 μ{sub B}/f.u.) than bulk CuCr{sub 2}Se{sub 4}. - Highlights: • Crystallographically aligned, phase pure CuCr{sub 2}Se{sub 4} were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the <111> direction. • The magnetization is larger than bulk CuCr{sub 2}Se{sub 4} or other CuCr{sub 2}Se{sub 4} films made to date.

Structural, magnetic, and electrochemical properties of poly(o-anisidine)/maghemite thin films

International Nuclear Information System (INIS)

Fonseca, L.H.M.; Rinaldi, A.W.; Rubira, A.F.; Cotica, L.F.; Medeiros, S.N. de; Paesano, A.; Santos, I.A.; Girotto, E.M.

2006-01-01

Electrodeposition of semiconducting poly(o-anisidine)/γ-Fe 2 O 3 (maghemite) thin films was carried out using an aqueous alkaline medium containing ferrous sulphate and o-anisidine. Potentiostatic composite deposition was made at 55 deg. C. X-ray diffraction and FTIR analysis indicated the presence of iron oxide (maghemite), o-anisidine, and chemical interaction between the components. The magnetic characterization of the resulting composite indicated a magnetically ordered state for the polymer/maghemite composite. Moessbauer characterization suggested the formation of nanoparticulate γ-Fe 2 O 3 clusters. Cyclic voltammetry evidenced electroactivity with characteristic peaks of a conducting polymer as well as the presence of γ-Fe 2 O 3

Magneto-optical and magnetic properties in a Co/Pd multilayered thin film

Energy Technology Data Exchange (ETDEWEB)

Nwokoye, Chidubem A. [Institute for Magnetics Research, Department of Electrical and Computer Engineering, The George Washington University, DC 20052 (United States); Naval Air Systems Command, Avionics, Sensors and E*Warfare Department, Patuxent River, MD 20670 (United States); Bennett, Lawrence H., E-mail: lbennett@gwu.edu [Institute for Magnetics Research, Department of Electrical and Computer Engineering, The George Washington University, DC 20052 (United States); Della Torre, Edward, E-mail: edt@gwu.edu [Institute for Magnetics Research, Department of Electrical and Computer Engineering, The George Washington University, DC 20052 (United States); Ghahremani, Mohammadreza [Institute for Magnetics Research, Department of Electrical and Computer Engineering, The George Washington University, DC 20052 (United States); Narducci, Frank A. [Naval Air Systems Command, Avionics, Sensors and E*Warfare Department, Patuxent River, MD 20670 (United States)

2017-01-01

The paper describes investigation of ferromagnetism at low temperatures. We explored the magneto-optical properties, influenced by photon–magnon interactions, of a ferromagnetic Co/Pd multilayered thin film below and above the magnon Bose–Einstein Condensation (BEC) temperature. Analyses of SQUID and MOKE low temperature experimental results reveal a noticeable phase transition in both magnetic and magneto-optical properties of the material at the BEC temperature. - Highlights: • The results show the effect of a non-zero chemical potential on the magnetization. • The MOKE and SQUID results show a phase transition point at the same temperature. • Magnon BEC is a major influence of the observed phase transition temperature.

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

Science.gov (United States)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

Unraveling the magnetic properties of BiFe0.5Cr0.5O3 thin films

Directory of Open Access Journals (Sweden)

G. Vinai

2015-11-01

Full Text Available We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3 (BFCO thin films grown on (001 (110 and (111 oriented SrTiO3 (STO substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field.

Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

Science.gov (United States)

Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

2017-10-01

We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

High Temperature Magnetic Properties of Indirect Exchange Spring FePt/M(Cu,C/Fe Trilayer Thin Films

Directory of Open Access Journals (Sweden)

Anabil Gayen

2013-01-01

Full Text Available We report the investigation of temperature dependent magnetic properties of FePt and FePt(30/M(Cu,C/Fe(5 trilayer thin films prepared by using magnetron sputtering technique at ambient temperature and postannealed at different temperatures. L10 ordering, hard magnetic properties, and thermal stability of FePt films are improved with increasing postannealing temperature. In FePt/M/Fe trilayer, the formation of interlayer exchange coupling between magnetic layers depends on interlayer materials and interface morphology. In FePt/C/Fe trilayer, when the C interlayer thickness was about 0.5 nm, a strong interlayer exchange coupling between hard and soft layers was achieved, and saturation magnetization was enhanced considerably after using interlayer exchange coupling with Fe. In addition, incoherent magnetization reversal process observed in FePt/Fe films changes into coherent switching process in FePt/C/Fe films giving rise to a single hysteresis loop. High temperature magnetic studies up to 573 K reveal that the effective reduction in the coercivity decreases largely from 34 Oe/K for FePt/Fe film to 13 Oe/K for FePt/C(0.5/Fe film demonstrating that the interlayer exchange coupling seems to be a promising approach to improve the stability of hard magnetic properties at high temperatures, which is suitable for high-performance magnets and thermally assisted magnetic recording media.

Magnetism of coherent Co and Ni thin films on Cu(111) and Au(111) substrates: An ab initio study

Energy Technology Data Exchange (ETDEWEB)

Zelený, Martin, E-mail: zeleny@fme.vutbr.cz; Dlouhý, Ivo

2017-02-15

We present an ab initio study of structural and magnetic properties of coherent Co and Ni thin films on Cu(111) and Au(111) substrates with thicknesses of up to 6 monolayers. All studied films on Cu(111) substrates prefer structures close their ground state (hcp for Co and fcc for Ni), whereas only the hcp stacking sequence has been found for both films on Au(111) substrates. All studied films exhibit instability of the first monolayer with respect to decomposition into 2-monolayer- or 3-monolayer-high islands, which is in agreement with experimental findings. All studied films are also ferromagnetic, nevertheless the Ni/Cu(111) films reduce their magnetic moments in the layer adjacent to the substrate due to a stronger Cu–Ni interaction at the interface. The magnetic anisotropy of a Co film does not depend on the film thickness: all the studied Co/Au(111) films exhibit a perpendicular magnetic anisotropy, whereas all the Co/Cu(111) films prefer in-plane magnetization. On the other hand, both Ni films change their preference for in-plane orientation of their easy axis to out-of-plane orientation at a critical thickness of 2 monolayers, however, the magnetic anisotropy energies for films thicker than 1 monolayer are smaller than 1 meV/Ni atom. These behaviors of magnetic anisotropy do not depend on the structure of the studied films. - Highlights: • All films exhibit instability of the first monolayer and prefer grow in islands. • The Cu–Ni interaction is responsible for reduced Ni magnetic moments in Ni/Cu(111) films. • The Co/Au(111) and Co/Cu(111) films show different orientations of magnetic anisotropy. • The Ni films exhibit in-plane magnetization only for single monolayer. • Behaviors of magnetic anisotropy do not depend on the structure of the studied films.

High-coercivity FePt nanoparticle assemblies embedded in silica thin films

International Nuclear Information System (INIS)

Yan, Q; Purkayastha, A; Singh, A P; Li, H; Ramanath, G; Li, A; Ramanujan, R V

2009-01-01

The ability to process assemblies using thin film techniques in a scalable fashion would be a key to transmuting the assemblies into manufacturable devices. Here, we embed FePt nanoparticle assemblies into a silica thin film by sol-gel processing. Annealing the thin film composite at 650 deg. C transforms the chemically disordered fcc FePt phase into the fct phase, yielding magnetic coercivity values H c >630 mT. The positional order of the particles is retained due to the protection offered by the silica host. Such films with assemblies of high-coercivity magnetic particles are attractive for realizing new types of ultra-high-density data storage devices and magneto-composites.

Control of the magnetic properties of LaMnO3 epitaxial thin films grown by Pulsed Laser Deposition

Science.gov (United States)

Martinez, Benjamin; Roqueta, Jaume; Pomar, Alberto; Balcells, Lluis; Frontera, Carlos; Konstantinovic, Zorica; Sandiumenge, Felip; Santiso, Jose; Advanced materials characterization Team; Thin films growth Team

2015-03-01

LaMnO3 (LMO), the parent compound of colossal magnetoresistance based manganites has gained renewed attention as a building block in heterostructures with unexpected properties. In its bulk phase, stoichiometric LMO is an A-type antiferromagnetic (AFM) insulator (TN = 140K) with orthorhombic structure that easily accommodate an oxygen excess by generating cationic (La or Mn) vacancies. As a result, a fraction of Mn 3+ changes to Mn 4+ leading to a double-exchange mediated ferromagnetic (FM) behavior. In thin films the AFM phase has been elusive up to now and thin films with FM ordering are usually reported. In this work, we have systematically studied the growth process of LaMnO3 thin films by pulsed laser deposition on SrTiO3 (001) substrates under different oxygen partial pressures (PO2) . A close correlation between the structure (explored by XRD) and the magnetic properties (SQUID measurements) of the films with PO2 has been identified. At high PO2 FM behavior is observed. In contrast, at very low PO2, the results obtained for unit cell volume (close to stoichiometric bulk values) and magnetic moment (0.2 μB/Mn) strongly indicate antiferromagnetic ordering. We acknowledge financial support from the Spanish MINECO (MAT2012-33207).

Superconducting oxypnictide thin films

Energy Technology Data Exchange (ETDEWEB)

Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

2012-07-01

We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.

Characterization of thin-film multilayers using magnetization curves and modeling of low-angle X-ray diffraction data

Energy Technology Data Exchange (ETDEWEB)

Lane, M. [Emory & Henry College, VA (United States); Chaiken, A.; Michel, R.P. [Lawrence Livermore National Lab., CA (United States)

1994-12-01

We have characterized thin-film multilayers grown by ion-beam sputtering using magnetization curves and modeling of low-angle x-ray diffraction data. In our films, we use ferromagnetic layer = Co, Fe, and NiFe and spacer layer = Si, Ge, FeSi{sub 2}, and CoSi{sub 2}. We have studied the effects of (1) deposition conditions; (2) thickness of layers; (3) different layer materials; and (4) annealing. We find higher magnetization in films grown at 1000V rather than 500V and in films with spacer layers of 50{angstrom} rather than 100{angstrom}. We find higher coercivity in films with cobalt grown on germanium rather than silicon, metal grown on gold underlayers rather than on glass substrates, and when using thinner spacer layers. Finally, modeling reveals that films grown with disilicide layers are more thermally stable than films grown with silicon spacer layers.

Correlating properties and microstructure of YBCO thin films by magnetic X-ray microscopy

Energy Technology Data Exchange (ETDEWEB)

Ruoss, Stephen; Stahl, Claudia; Weigand, Markus; Schuetz, Gisela [Max-Planck-Institute for Intelligent Systems, Heisenbergstrasse 3, 70569 Stuttgart (Germany); Zahn, Patrick; Bayer, Jonas [Max-Planck-Institute for Intelligent Systems, Heisenbergstrasse 3, 70569 Stuttgart (Germany); Research Institute for Innovative Surfaces, FINO, Aalen University, Beethovenstrasse 1, 73430 Aalen (Germany); Albrecht, Joachim [Research Institute for Innovative Surfaces, FINO, Aalen University, Beethovenstrasse 1, 73430 Aalen (Germany)

2016-07-01

The magnetic flux distribution in high-temperature superconductors namely YBCO has been observed using a novel high-resolution technique based on the X-ray magnetic circular dichroism (XMCD). Therefore, a CoFeB layer is deposited on the superconductor which exhibits a strong XMCD-effect. X-ray absorption measurements with circular polarized radiation allows the analysis of the magnetic flux distribution in the superconductor via the soft-magnetic sensor layer [3,4]. In the total electron yield (TEY) mode of the scanning X-ray microscope (SXM) the surface structure and the magnetic domains can be imaged at the same time. Having obtained such high resolution images, the correlation of magnetic flux penetration and defect structure of YBCO thin films can be analyzed. The measurements have been performed at the scanning X-ray microscope MAXYMUS at Bessy II, HZB Berlin.

Commensurate vortex configurations in thin superconducting films nanostructured by square lattice of magnetic dots

Energy Technology Data Exchange (ETDEWEB)

Milosevic, M.V.; Peeters, F.M

2004-05-01

Within the phenomenological Ginzburg-Landau (GL) theory, we investigate the vortex structure of a thin superconducting film (SC) with a regular matrix of ferromagnetic dots (FD) deposited on top of it. The vortex pinning properties of such a magnetic lattice are studied, and the field polarity dependent votex pinning is observed. The exact vortex configuration depends on the size of the magnetic dots, their polarity, periodicity of the FD-rooster and the properties of the SC expressed through the effective Ginzburg-Landau parameter {kappa}*.

Commensurate vortex configurations in thin superconducting films nanostructured by square lattice of magnetic dots

International Nuclear Information System (INIS)

Milosevic, M.V.; Peeters, F.M.

2004-01-01

Within the phenomenological Ginzburg-Landau (GL) theory, we investigate the vortex structure of a thin superconducting film (SC) with a regular matrix of ferromagnetic dots (FD) deposited on top of it. The vortex pinning properties of such a magnetic lattice are studied, and the field polarity dependent votex pinning is observed. The exact vortex configuration depends on the size of the magnetic dots, their polarity, periodicity of the FD-rooster and the properties of the SC expressed through the effective Ginzburg-Landau parameter κ*

Improving the performance of nickel-coated fluorine-doped tin oxide thin films by magnetic-field-assisted laser annealing

Energy Technology Data Exchange (ETDEWEB)

Li, Bao-jia, E-mail: li_bjia@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Kong, Xia; Cai, Yun-long; Zhang, Jie-lu [Jiangsu Tailong Reduction Box Co. Ltd., Taixing 225400 (China)

2015-10-01

Highlights: • Ni/FTO films were prepared by sputtering Ni layers on commercial FTO glass. • The as-prepared Ni/FTO films underwent magnetic-field-assisted laser annealing. • Magnetic field and laser fluence were crucial for improving quality of the films. • All Ni/FTO films displayed enhanced compactness after magnetic laser annealing. • Magnetic laser annealing using a fluence of 0.9 J/cm{sup 2} led to the best film quality. - Abstract: Nickel-coated fluorine-doped tin oxide (Ni/FTO) thin films were prepared by sputtering Ni layers on commercial FTO glass. The as-prepared Ni/FTO films underwent nanosecond pulsed laser annealing in an external magnetic field (0.4 T). The effects of the presence of magnetic field and laser fluence on surface morphology, crystal structure and photoelectric properties of the films were investigated. All the films displayed enhanced compactness after magnetic-field-assisted laser annealing. It was notable that both crystallinity and grain size of the films gradually increased with increasing laser fluence from 0.6 to 0.9 J/cm{sup 2}, and then decreased slightly with an increase in laser fluence to 1.1 J/cm{sup 2}. As a result, the film obtained by magnetic-field-assisted laser annealing using a fluence of 0.9 J/cm{sup 2} had the best overall photoelectric property with an average transmittance of 81.2%, a sheet resistance of 5.5 Ω/sq and a figure of merit of 2.27 × 10{sup −2} Ω{sup −1}, outperforming that of the film obtained by pure laser annealing using the same fluence.

Influence Of The Switching field On The Magnetization Process Thin Film Magneto optic

International Nuclear Information System (INIS)

Atmono, Tri Mardji

1996-01-01

The investigation of influence of switching field on the magnetic reversal process of bilayer Fe Tb/FeTbCo has been done. Thin film has been produced by sputtering method using mosaic target placed as cathode. The experiment shows that the interface wall between two layers is created due to the shifting of the switching field from the coercive force of the single layer. At the temperature of 26 o C, the special magnetization process accurst because the two layers have the same value of switching field : For the range of the magnetic field -3.8 kg o C o C. This mean that the compensation point lies in this temperature range

Influence of stress on morphology and magnetism of heteroepitaxial thin films

International Nuclear Information System (INIS)

Wedler, G.

2001-01-01

In this thesis the method of the bending-beam technique and the scanning tunnel microscopy was used in order to study the influence of mechanical stresses on growth and magnetoelastic coupling of selected epitaxial thin-layer systems. The Si x Ge 1-x alloy films deposited at 900 K on Si(001) substrates with Si concentrations 20% a change of the stress-behaviour is observed, which lets conclude to pure 3D island growth without wetting layer. Scanning-tunnel-microscopy studies show already at intermediate film thicknesses of 1 nm regular islands with a narrow size distribution. For the explanation of this surprising change of the growth modus the influence of kinetic parameters is discussed. Furthermore for the first time stress measurements of Fe/ GaAs(001) are presented. The behaviour of the film stress at 450 K hints to a few nm thick interdiffusion layer between film and substrate. This interdiffusion is at 300 K only by about 30% reduced and cannot by this be neglected anywhere. By means of on different substrates [Mg(001), lowly stressed Cr(001) buffer layer, GaAs(001)] growed Fe films for the first time a detailed picture of the stress dependence of the magnetoelastic coupling constants B 1 and B 2 of Fe in the layer-density range of 2-100 mm is presented. While the coupling constants of stress-free Fe(001) films exhibit volume behaviour, distinct deviations occur already at small stresses of about 0.1 GPa; at some GPa even the sign changes. The value of B 2 decreases linearly with the film stress up to 6 GPa, in B 1 after an initially linear slope above 2-3 GPa a saturation occurs. Magnetization and magnetic anisotropy however behave in whole studied layer-density range as in the volume

Study of obliquely deposited thin cobalt films

International Nuclear Information System (INIS)

Szmaja, W.; Kozlowski, W.; Balcerski, J.; Kowalczyk, P.J.; Grobelny, J.; Cichomski, M.

2010-01-01

Research highlights: → The paper reports simultaneously on the magnetic domain structure of obliquely deposited thin cobalt films (40 nm and 100 nm thick) and their morphological structure. Such studies are in fact rare (Refs. cited in the paper). → Moreover, to our knowledge, observations of the morphological structure of these films have not yet been carried out simultaneously by transmission electron microscopy (TEM) and atomic force microscopy (AFM). → The films of both thicknesses were found to have uniaxial in-plane magnetic anisotropy. → The magnetic microstructure of the films 40 nm thick was composed of domains running and magnetized predominantly in the direction perpendicular to the incidence plane of the vapor beam. → As the film thickness was changed from 40 nm to 100 nm, the magnetic anisotropy was observed to change from the direction perpendicular to parallel with respect to the incidence plane. → Thanks to the application of TEM and AFM, complementary information on the morphological structure of the films could be obtained. → In comparison with TEM images, AFM images revealed grains larger in size and slightly elongated in the direction perpendicular rather than parallel to the incidence plane. → These experimental findings clearly show that surface diffusion plays an important role in the process of film growth. → For the films 40 nm thick, the alignment of columnar grains in the direction perpendicular to the incidence plane was observed. → This correlates well with the magnetic domain structure of these films. → For the films 100 nm thick, the perpendicular alignment of columnar grains could also be found, although in fact with larger difficulty. → TEM studies showed that the films consisted mainly of the hexagonal close-packed (HCP) crystalline structure, but no preferred crystallographic orientation of the grains could be detected for the films of both thicknesses. → For the films 100 nm thick, the alignment of

Structural and magnetic properties of Co-doped (La,Sr)TiO{sub 3} epitaxial thin films probed using x-ray magnetic circular dichroism

Energy Technology Data Exchange (ETDEWEB)

Copie, O; Mattana, R; Bibes, M; Cros, V; Herranz, G; Anane, A; Ranchal, R; Jacquet, E; Bouzehouane, K; Petroff, F; Barthelemy, A [Unite Mixte de Physique CNRS/Thales, Campus de l' Ecole Polytechnique, 1 Avenue A Fresnel, 91767 Palaiseau, France and Universite Paris-Sud 11, 91405 Orsay (France); Rode, K [Center for Research on Adaptative Nanostructures and Nanodevices, Trinity College Dublin, Dublin 2, Republic of Ireland (Ireland); Arrio, M-A [Institut de Mineralogie et de Physique des Milieux Condenses CNRS, Universite Pierre et Marie Curie, 140 rue de Lourmel 75015 Paris (France); Bencok, P; Brookes, N B, E-mail: agnes.barthelemy@thalesgroup.co [European Synchrotron Radiation Facility, 6 rue Horowitz, 38083 Grenoble (France)

2009-10-07

We report a study of Co-doped La{sub 0.37}Sr{sub 0.63}TiO{sub 3-delta} thin films grown by pulsed laser deposition in various oxygen pressure conditions. X-ray absorption spectroscopy and magnetic circular dichroism measurements at the Co L{sub 2,3} edges reveal that the cobalt mainly substitutes for the titanium and is in an ionic state. Nevertheless, in some films, indications of additional cobalt metallic impurities were found, suggesting that the intrinsic character of this magnetic system remains questionable.

Size effect in the spin glass magnetization of thin AuFe films as studied by polarized neutron reflectometry.

Science.gov (United States)

Saoudi, M; Fritzsche, H; Nieuwenhuys, G J; Hesselberth, M B S

2008-02-08

We used polarized neutron reflectometry to determine the temperature dependence of the magnetization of thin AuFe films with 3% Fe concentration. We performed the measurements in a large magnetic field of 6 T in a temperature range from 295 to 2 K. For the films in the thickness range from 500 to 20 nm we observed a Brillouin-type behavior from 295 K down to 50 K and a constant magnetization of about 0.9 micro(B) per Fe atom below 30 K. However, for the 10 nm thick film we observed a Brillouin-type behavior down to 20 K and a constant magnetization of about 1.3 micro(B) per Fe atom below 20 K. These experiments are the first to show a finite-size effect in the magnetization of single spin-glass films in large magnetic fields. Furthermore, the ability to measure the deviation from the paramagnetic behavior enables us to prove the existence of the spin-glass state where other methods relying on a cusp-type behavior fail.

Residual stress change by thermal annealing in amorphous Sm-Fe-B thin films

International Nuclear Information System (INIS)

Na, S.M.; Suh, S.J.; Kim, H.J.; Lim, S.H.

2002-01-01

The change in the residual stress and its effect on mechanical bending and magnetic properties of sputtered amorphous Sm-Fe-B thin films are investigated as a function of annealing temperature. Two stress components of intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film are used to explain the stress state in as-deposited thin films, and the annealing temperature dependence of residual stress, mechanical bending and magnetic properties

Proceedings of the international conference on thin films and applications: book of abstracts

International Nuclear Information System (INIS)

2013-01-01

In the era of miniaturization, the role of thin films is highly significant to achieve smaller devices with higher speed especially in new generation of integrated circuits, sensors, flat panel displays, Micro-Electro-Mechanical Systems (MEMS), biomedical devices, optical instruments and microwave communications. Thin films as a nano-scale dimensional system have great importance to many challenging applications. Biological coatings, clean energy, ferroelectric and piezoelectric thin films, ion beam thin films, magnetic thin films, nanostructured and nano composite coatings, NEMS, sensors, thin film preparation and characterization are the topics covered in this symposium. Papers relevant to INIS are indexed separately

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Science.gov (United States)

Meng, Siqin; Yue, Zhenxing; Zhang, Xiaozhi; Li, Longtu

2014-01-01

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Energy Technology Data Exchange (ETDEWEB)

Meng, Siqin; Yue, Zhenxing, E-mail: yuezhx@tsinghua.edu.cn; Zhang, Xiaozhi; Li, Longtu

2014-01-30

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

Magnetostrictive thin films prepared by RF sputtering

International Nuclear Information System (INIS)

Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

2005-01-01

Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

Structural, electrical and magnetic properties of evaporated Ni/Cu and Ni/glass thin films

Energy Technology Data Exchange (ETDEWEB)

Nacereddine, C. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Layadi, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria)]. E-mail: A_Layadi@yahoo.fr; Guittoum, A. [Centre de Recherche Nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Cherif, S.-M. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Chauveau, T. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Billet, D. [Laboratoire PMTM, Institut Galilee, Univeriste Paris 13, Villetaneuse 93340 (France); Youssef, J. Ben [Laboratoire de Magnetisme de Bretagne, U.B.O., Brest 29238 (France); Bourzami, A. [Departement de Physique, Universite Ferhat Abbas, Setif 19000 (Algeria); Bourahli, M.-H. [Departement d' O. M. P., Universite Ferhat Abbas, Setif 19000 (Algeria)

2007-01-25

The structural, electrical and magnetic properties of Ni thin films evaporated onto glass and polycrystalline Cu substrates have been investigated. The Ni thickness ranges from 31 to 165 nm. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) have been used to study the structure and morphology of these systems. The Ni/Cu and Ni/glass thin films are found to be polycrystalline with a (1 1 1) texture. There is an overall increase of the grain size with increasing thickness. A negative strain was noted indicating that all the samples are under a compressive stress. Diffusion at the grain boundaries seems to be a major contribution to the electrical resistivity in this thickness range. Study of the hysteresis curves, obtained by vibrating sample magnetometer (VSM), indicates that all samples are characterized by an in-plane magnetization easy axis. Higher in-plane coercive fields seem to be associated with higher grain size, indicating that coercivity may be due to nucleation of reverse domains rather than pinning of domain walls. The saturation field and the squareness have been studied as a function of the Ni thickness.

Microwave Josephson generation in thin film superconducting bridges

International Nuclear Information System (INIS)

Gubankov, V.N.; Koshelets, V.P.; Ovsyannikov, G.A.

1975-01-01

Thin-film bridges have some advantage over other types of superconducting weak links: good definition of electromagnetic parameters and of weak region geometry. Up to now Josephson properties of bridges have been investigated by using indirect methods (the effect of magnetic field on the critical current I 0 , the bridge behavior in a microwave field, etc.). Direct experimental observation of Josephson radiation from autonomous thin film bridges is reported. Microwave radiation in tin bridges of 'variable' thickness has been investigated where the thickness of the film forming the bridge is far less than the thickness of the bank films. (Auth.)

Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields

Directory of Open Access Journals (Sweden)

Andrei E. Surdu

2011-12-01

Full Text Available The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (Jc from the magnetization hysteresis (M–H curves for both sets of samples and found that the Jc value of FeO-coated films is higher at all fields and temperatures than the Jc value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.

Multiple collinear magnetic arrangements in thin Mn films supported on Fe(001). Antiferromagnetic versus ferromagnetic behavior

International Nuclear Information System (INIS)

Martinez, E.; Vega, A.; Robles, R.; Vazquez de Parga, A.L.

2005-01-01

We present a theoretical study of the magnetic properties of thin Mn films of 6 and 7 monolayers supported on Fe(001). The ab-initio tight binding linear muffin tin orbital (TB-LMTO) method was used to investigate the competition between ferromagnetic (F) and antiferromagnetic (AF) couplings within the system. We found several collinear magnetic solutions that may coexist at room temperature. The most stable configurations are characterized by AF coupling between the surface and subsurface Mn layers together with F coupling between Mn and Fe at the interface. The ground state arrangements for the 6 and 7 Mn films display opposite sign of the surface magnetic moment relative to the Fe substrate. The implications of these results in the possible onset of non-collinear magnetism when a step is present at the interface are discussed in comparison with Cr/Fe systems where non-collinear magnetism has been recently reported

Static and dynamic magnetization properties of Y1Ba2Cu3Oz thin films

International Nuclear Information System (INIS)

Sekula, S.T.

1989-08-01

Magnetization studies were carried out on Y 1 Ba 2 Cu 3 O z (YBCO) thin films that were e-beam evaporated onto circular discs of single-crystal SrTiO 3 with (001) and (110) faces as well as KTaO 3 with (001) faces. The measurements were made using vibrating sample (VSM) and SQUID-based magnetometry with the applied field perpendicular to the substrate surface. Critical current densities J c (H,T) are deduced from the magnetic hysteresis. Flux creep effects are observed over longer periods with the SQUID magnetometer. Analysis of the results of low frequency response of these films to collinear ac and dc magnetic fields are compared with the dc magnetometry results. J c (H,T) is observed to be quite sensitive to the type of epitaxial growth on the various substrates. 16 refs., 10 figs

Effect of thickness on structure, microstructure, residual stress and soft magnetic properties of DC sputtered Fe65Co35 soft magnetic thin films

International Nuclear Information System (INIS)

Prasanna Kumari, T.; Manivel Raja, M.; Kumar, Atul; Srinath, S.; Kamat, S.V.

2014-01-01

The effect of film thickness on structure, microstructure, residual stress and soft magnetic properties of Fe 65 Co 35 thin films deposited on Si(001) and MgO(001) substrates was investigated by varying film thickness from 30 to 600 nm. X-ray diffraction studies showed that the FeCo films are polycrystalline in the as-deposited condition irrespective of deposition on Si or MgO substrate. The microstructure of films consisted of spherical grains for 30 nm film thickness and columnar grains for all other film thicknesses. The grain size for the films was found to increase from 15 to 50 nm with increasing film thickness. The sputtered films also exhibited tensile residual stresses with the magnitude of stress decreasing with increasing film thickness. The Fe 65 Co 35 films deposited on both substrates also exhibited very good in-plane soft magnetic properties with a saturation magnetization 4πM s of ∼23.6–23.8 kG and coercivity of ∼27–30 Oe without any under-layer only for films with thickness of 30 nm. For all other thicknesses, these films exhibited a significantly higher coercivity. The observed variations in soft magnetic properties with film thickness were explained in terms of residual stress and microstructure of the films. - Highlights: • Spherical grain morphology transformed to columnar above 30 nm film thickness. • Sputtered films exhibited tensile residual stresses decreasing with film thickness. • An in-plane coercivity of ∼27–30 Oe was achieved without any under-layer

Magnetic field induced superconductor-insulator transitions for ultra-thin Bi films on the different underlayers

International Nuclear Information System (INIS)

Makise, K; Kawaguti, T; Shinozaki, B

2009-01-01

This work shows the experimental results of the superconductor-insulator (S-I) transition for ultra-thin Bi films in magnetic fields. The quench-condensed (q-c) Bi film onto insulating underlayers have been interpreted to be homogeneous. In contrast, the Bi film without underlayers has been regarded as a granular film. The electrical transport properties of ultra-thin metal films near the S-I transition depend on the structure of the film. In order to confirm the effect of the underlayer to the homogeneity of the superconducting films, we investigate the characteristics of S-I transitions of q-c nominally homogeneous Bi films on underlayers of two insulating materials, SiO, and Sb. Under almost the same deposition condition except for the material of underlayer, we prepared the Bi films by repeating the additional deposition and performed in-situ electrical measurement. It is found that the transport properties near the S-I transitions show the remarkable difference between two films on different underlayers. As for Bi films on SiO, it turned out that the temperature dependence of resistance per square R sq (T) of the field-tuned transition and the thickness-tuned transition shows similar behavior; it was a thermally activated form. On the other hand, the R sq (T) of Bi films on Sb for thickness-tuned S-I transition showed logarithmic temperature dependence, but that for field-tuned S-I transition showed a thermally activated form.

High-resolution structural characterization and magnetic properties of epitaxial Ce-doped yttrium iron garnet thin films

Science.gov (United States)

Li, Zhong; Vikram Singh, Amit; Rastogi, Ankur; Gazquez, Jaume; Borisevich, Albina Y.; Mishra, Rohan; Gupta, Arunava

2017-07-01

Thin films of magnetic garnet materials, e.g. yttrium iron garnet (Y3Fe5O12, YIG), are useful for a variety of applications including microwave integrated circuits and spintronics. Substitution of rare earth ions, such as cerium, is known to enhance the magneto-optic Kerr effect (MOKE) as compared to pure YIG. Thin films of Ce0.75Y2.25Fe5O12 (Ce:YIG) have been grown using the pulsed laser deposition (PLD) technique and their crystal structure examined using high resolution scanning transmission electron microscopy. Homogeneous substitution of Ce in YIG, without oxidation to form a separate CeO2 phase, can be realized in a narrow process window with resulting enhancement of the MOKE signal. The thermally generated signal due to spin Seebeck effect for the optimally doped Ce:YIG films has also been investigated.

Growth and in-plane magnetic anisotropy of inverse spinel Co{sub 2}MnO{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Koo, Taeyeong; Kim, Jaeyeong [Pohang University of Science and Technology, Pohang (Korea, Republic of); Song, Jonghyun [Chungnam National University, Daejeon (Korea, Republic of)

2014-11-15

Epitaxial Co{sub 2}MnO{sub 4} thin films were grown on Nb(0.1wt.)-doped SrTiO{sub 3} single-crystal substrates with (100) and (110) crystal orientations by using pulsed laser deposition. Their crystal structures and magnetic properties were investigated. Both samples exhibited ferrimagnetic transitions with enhanced transition temperatures. Isotropic M-H loops were observed on the in-plane surface of Co{sub 2}MnO{sub 4}(00l) grown on Nb(0.1wt)-doped SrTiO{sub 3}(100). Strong magnetic anisotropy was observed on the in-plane surface for Co{sub 2}MnO{sub 4} (ll0) grown on Nb(0.1wt)-doped SrTiO{sub 3}(110). A magnetic easy axis existed along the elongated tetragonal direction. This was attributed to the strong interplay between the spin and lattice degrees of freedom in the Co{sub 2}MnO{sub 4} thin film.

Goos-Hänchen effect and bending of spin wave beams in thin magnetic films

International Nuclear Information System (INIS)

Gruszecki, P.; Krawczyk, M.; Romero-Vivas, J.; Dadoenkova, Yu. S.; Dadoenkova, N. N.; Lyubchanskii, I. L.

2014-01-01

For magnon spintronic applications, the detailed knowledge of spin wave (SW) beam dispersion, transmission (reflection) of SWs passing through (reflected from) interfaces, or borders or the scattering of SWs by inhomogeneities is crucial. These wave properties are decisive factors on the usefulness of a particular device. Here, we demonstrate, using micromagnetic simulations supported by an analytical model, that the Goos-Hänchen (GH) shift exists for SW reflecting from thin film edge and that with the effect becomes observable. We show that this effect will exist for a broad range of frequencies in the dipole-exchange range, with the magnetization degree of pinning at the film edge as the crucial parameter, whatever its nature. Moreover, we have also found that the GH effect can be accompanied or even dominating by a bending of the SW beam due to the inhomogeneity of the internal magnetic field. This inhomogeneity, created by demagnetizing field taking place at the film edge, causes gradual change of SWs refractive index. The refraction of the SW beams by the non-uniformity of the magnetic field enables the exploration of graded index magnonics and metamaterial properties for the transmission and processing of information at nanoscale

Goos-Hänchen effect and bending of spin wave beams in thin magnetic films

Energy Technology Data Exchange (ETDEWEB)

Gruszecki, P., E-mail: pawel.gruszecki@amu.edu.pl; Krawczyk, M., E-mail: krawczyk@amu.edu.pl [Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, Poznań 61-614 (Poland); Romero-Vivas, J. [Department of Electronic and Computer Engineering, University of Limerick, Limerick (Ireland); Dadoenkova, Yu. S.; Dadoenkova, N. N. [Donetsk Physical and Technical Institute of the National Academy of Sciences of Ukraine, 83114 Donetsk (Ukraine); Ulyanovsk State University, 42 Leo Tolstoy str., 432000 Ulyanovsk (Russian Federation); Lyubchanskii, I. L. [Donetsk Physical and Technical Institute of the National Academy of Sciences of Ukraine, 83114 Donetsk (Ukraine)

2014-12-15

For magnon spintronic applications, the detailed knowledge of spin wave (SW) beam dispersion, transmission (reflection) of SWs passing through (reflected from) interfaces, or borders or the scattering of SWs by inhomogeneities is crucial. These wave properties are decisive factors on the usefulness of a particular device. Here, we demonstrate, using micromagnetic simulations supported by an analytical model, that the Goos-Hänchen (GH) shift exists for SW reflecting from thin film edge and that with the effect becomes observable. We show that this effect will exist for a broad range of frequencies in the dipole-exchange range, with the magnetization degree of pinning at the film edge as the crucial parameter, whatever its nature. Moreover, we have also found that the GH effect can be accompanied or even dominating by a bending of the SW beam due to the inhomogeneity of the internal magnetic field. This inhomogeneity, created by demagnetizing field taking place at the film edge, causes gradual change of SWs refractive index. The refraction of the SW beams by the non-uniformity of the magnetic field enables the exploration of graded index magnonics and metamaterial properties for the transmission and processing of information at nanoscale.

Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

Science.gov (United States)

Samanta, Kousik

Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

Effect of the thickness reduction on the structural, surface and magnetic properties of α-Fe{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Aragón, Fermin F.H., E-mail: fherrera@fis.unb.br [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Ardisson, José D. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Aquino, Juan C.R. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Gonzalez, Ismael; Macedo, Waldemar A.A. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Coaquira, José A.H.; Mantilla, John; Silva, Sebastião W. da; Morais, Paulo C. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil)

2016-05-31

Hematite (α-Fe{sub 2}O{sub 3}) polycrystalline thin films of different thicknesses were produced by thermal oxidation in air atmosphere from Fe metallic thin-films deposited by radio frequency (RF) sputtering technique. X-ray diffraction (XRD) patterns confirm the formation of hematite phase in all samples and indicate that the mean grain size decreases as the film thickness becomes thinner. Conversion electron Mössbauer spectroscopy (CEMS) spectra at room temperature show magnetic splitting (six line patterns). It is determined that the resonance peaks become broader and asymmetric as the film thickness decreases. This finding was associated with the structural disorder introduced by the thickness reduction. Magnetization as a function of the magnetic field curve obtained at 300 K shows the presence of a weak-ferromagnetic contribution, which was assigned to the large density of decompensated spins at the films surface. From the magnetization vs. temperature curves it has been determined that the Morin transition temperature (T{sub M}) is shifted from ~ 240 K to ~ 196 K, meanwhile it becomes more broadened as the film thickness decreases. X-ray photoelectron spectroscopy (XPS) measurements show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions whose population increases as the film becomes thinner. The density of chemisorbed oxygen increases as the film thickness is reduced in agreement with the results obtained from the other measurements in this work. - Highlights: • Hematite thin films with different thickness were deposited by RF sputtering technique. • X-ray diffraction patterns confirm the formation of hematite phase in all samples. • Hysteresis curve at 300 K shows the presence of a weak-ferromagnetic phase. • XPS show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions.

Solid surfaces, interfaces and thin films

CERN Document Server

Lüth, Hans

2015-01-01

This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

Solid Surfaces, Interfaces and Thin Films

CERN Document Server

Lüth, Hans

2010-01-01

This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T

Directory of Open Access Journals (Sweden)

Wei Niu

2017-05-01

Full Text Available We report on the temperature and field dependence of resistance of La0.7Sr0.3MnO3 thin films over a wide temperature range and in pulsed magnetic fields up to 60 T. The epitaxial La0.7Sr0.3MnO3 thin films were deposited by laser molecular beam epitaxy. High magnetic field magnetoresistance curves were fitted by the Brillouin function, which indicated the existence of magnetically polarized regions and the underlying hopping mechanism. The unsaturated magnetoconductance was the most striking finding observed in pulsed magnetic fields up to 60 T. These observations can deepen the fundamental understanding of the colossal magnetoresistance in manganites with strong correlation of transport properties and magnetic ordering.

Magneto-optical properties of BiFeO3 thin films using surface plasmon resonance technique

International Nuclear Information System (INIS)

Paliwal, Ayushi; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

2014-01-01

Indigeneously assembled surface plasmon resonance (SPR) set up has been exploited to study the magnetic field dependent optical properties of BiFeO 3 thin films. BiFeO 3 thin films have been deposited onto gold (Au) coated glass prism by using pulsed laser deposition technique. The surface plasmon modes in prism/Au/BiFeO 3 /air structure have been excited in Kretschmann configuration at the interface of Au/BiFeO 3 thin films. The SPR reflectance curves obtained for prism/Au/BiFeO 3 /air structure were utilized to investigate the optical properties of BiFeO 3 thin films at optical frequency (λ=633 nm) as a function of applied magnetic field. SPR curves shows a continuous shift towards lower angles with increasing applied magnetic field, which indicate the promising application of ferromagnetic BiFeO 3 film as a magnetic field sensor. Complex dielectric constant of deposited BiFeO 3 film was determined by fitting the experimental SPR data with Fresnel's equations. The variation of complex dielectric constant and refractive index of BiFeO 3 film was studied with increase in magnetic field, and the sensitivity of magnetic field sensor was found to be about 0.52 RIU/T

Effect of carbon additive on microstructure evolution and magnetic properties of epitaxial FePt (001) thin films

International Nuclear Information System (INIS)

Ding, Y.F.; Chen, J.S.; Liu, E.; Lim, B.C.; Hu, J.F.; Liu, B.

2009-01-01

FePt:C thin films were deposited on CrRu underlayers by DC magnetron co-sputtering. The effects of C content, FePt:C film thickness and substrate temperature on the microstructural and magnetic properties of the epitaxial FePt (001) films were studied. Experimental results showed that even with 30 vol.% C doping, the FePt films could keep a (001) preferred orientation at 350 deg. C . When a FePt:C film was very thin (< 5 nm), the film had a continuous microstructure instead of a granual structure with C diffused onto the film surface. With further increased film thickness, the film started to nucleate and formed a column microstructure over continuous FePt films. A strong exchange coupling in the FePt:C films was believed to be due to the presence of a thin continuous FePt layer attributed to the carbon diffusion during the initial stage of the FePt:C film growth. Despite the presence of a strong exchange coupling in the FePt:C (20 vol.% C) film, the SNR ratio of the FePt:C media was about 10 dB better than that of the pure FePt media. The epitaxial growth of the FePt:C films on the Pt layers was observed from high resolution TEM cross sectional images even for the films grown at about 200 deg. C . The TEM images did not show an obvious change in the morphology of the FePt:C films deposited at different temperatures (from 200 deg. C to 350 deg. C ), though the ordering degree and coercivity of the films increased with increased substrate temperature

Thin films on the basis of magnetic nanoparticles

Directory of Open Access Journals (Sweden)

G. Alimbekova

2012-09-01

Full Text Available The present work is to study the adsorption of magnetic nanoparticles in the structure of nanohybrid films by layer-by-layer (LbL method. Obtained by UV-VIS absorption spectra of 5% magnetic nanoparticles and the aqueous solution polyvinyl alcohol consisting of 5 and 10 nanohybrid layers. Analysis of the optical absorption spectra shows the homogeneity and mechanical stability of the nanohybrid films.

Spin Hall magnetoresistance at the interface between platinum and cobalt ferrite thin films with large magnetic anisotropy

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Takeshi Tainosho

2017-05-01

Full Text Available The recently discovered spin Hall magnetoresistance (SMR effect is a useful means to obtain information on the magnetization process at the interface between a nonmagnetic metal and ferromagnetic insulators. We report the SMR measurements at the interface between platinum and cobalt ferrite thin films for samples with two different preferential directions of magnetization (out-of-plane and in-plane. The directional difference of the magnetic easy axis does not seem to influence the value of SMR.

Magnetocrystalline Anisotropy of Magnetic Grains in Co80Pt20:Oxide Thin Films Probed by X-ray Magnetic Circular Dichroism

Energy Technology Data Exchange (ETDEWEB)

Zhang, W.; Morton, S. A.; Wong, P. K. J.; Arenholz, E.; Lu, B.; Cheng, T. Y.; Xu, Y. B.; Laan, G. van der; Hu, X.F

2011-01-12

Using angle-dependent x-ray magnetic circular dichroism, we have measured magnetic hysteresis loops at the Co L2,3 edges of oxide-doped Co80Pt20 thin films. The magnetocrystalline anisotropy energy (MAE) of the Co atoms, which is the main source of the magnetocrystalline anisotropy of the CoPt magnetic grains, has been determined directly from these element-specific hysteresis loops. When the oxide volume fraction (OVF) is increased from 16.6% to 20.7%, the Co MAE has been found to decrease from 0.117 meV/atom to 0.076 meV/atom. While a larger OVF helps one to achieve a smaller grain size, it reduces the magnetocrystalline anisotropy, as demonstrated unambiguously from the direct Co MAE measurements. Our results suggest that those Co80Pt20:oxide films with an OVF between 19.1% and 20.7% are suitable candidates for high-density magnetic recording.

Effect of Ti seed and spacer layers on structure and magnetic properties of FeNi thin films and FeNi-based multilayers

Energy Technology Data Exchange (ETDEWEB)

Svalov, A.V., E-mail: andrey.svalov@ehu.es [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg (Russian Federation); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Kurlyandskaya, G.V. [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg (Russian Federation)

2014-10-15

Highlights: • Fe{sub 19}Ni{sub 81} films and FeNi-based multilayers were prepared by magnetron sputtering. • The samples were deposited onto glass substrates at room temperature. • Ti/FeNi films exhibit good (1 1 1) texture and crystallinity. • The thick Cu seed increases the coercive force of the magnetic layer. • The thin Ti spacer restores the magnetic softness of the Cu/Ti/FeNi multilayers. - Abstract: The microstructure and magnetic properties of sputtered permalloy films and FeNi-based multilayers prepared by magnetron sputtering have been studied. X-ray diffraction measurements indicate that Ti/FeNi films exhibit good (1 1 1) texture and crystallinity. Ti/FeNi bilayers with high crystallographic quality have relatively low resistivity. The Ti seed layer does not influence the magnetic properties of FeNi film in Ti/FeNi bilayers, but the thick Cu seed layer leads to an increase of the coercive force of the magnetic layer. For the FeNi films deposited on thick Cu seed layer, the (0 1 0) and (0 0 2) diffraction peaks of hcp nickel were clearly observed. The thin Ti spacer between Cu and FeNi layers prevents the formation of the nickel phase and restores the magnetic softness of the FeNi layer in the Cu/Ti/FeNi sample. Obtained results can be important for the development of multilayer sensitive elements for giant magnetoimpedance or magnetoresistance detectors.

Magnetic core/shell nanoparticle thin films deposited by MAPLE: Investigation by chemical, morphological and in vitro biological assays

International Nuclear Information System (INIS)

Cristescu, R.; Popescu, C.; Socol, G.; Iordache, I.; Mihailescu, I.N.; Mihaiescu, D.E.; Grumezescu, A.M.; Balan, A.; Stamatin, I.; Chifiriuc, C.; Bleotu, C.; Saviuc, C.; Popa, M.; Chrisey, D.B.

2012-01-01

Highlights: ► We deposit magnetic Fe 3 O 4 /oleic acid/cephalosporin nanoparticle thin films by MAPLE. ► Thin films have a chemical structure similar to the starting material. ► Cephalosporins have an additive effect on the grain size and induce changes in grain shape. ► MAPLE can be used to develop novel strategies for fighting medical biofilms associated with chronic infections. - Abstract: We report on thin film deposition of nanostructured Fe 3 O 4 /oleic acid/ceftriaxone and Fe 3 O 4 /oleic acid/cefepime nanoparticles (core/shell/adsorption-shell) were fabricated by matrix assisted pulsed laser evaporation (MAPLE) onto inert substrates. The thin films were characterized by profilometry, Fourier transform infrared spectroscopy, atomic force microscopy, and investigated by in vitro biological assays. The biological properties tested included the investigation of the microbial viability and the microbial adherence to the glass coverslip nanoparticle film, using Gram-negative and Gram-positive bacterial strains with known antibiotic susceptibility behavior, the microbial adherence to the HeLa cells monolayer grown on the nanoparticle pellicle, and the cytotoxicity on eukaryotic cells. The proposed system, based on MAPLE, could be used for the development of novel anti-microbial materials or strategies for fighting pathogenic biofilms frequently implicated in the etiology of biofilm associated chronic infections.

Collective magnetic behaviors of Fe-Ag nanostructured thin films above the percolation limit

International Nuclear Information System (INIS)

Alonso, J.; Fdez-Gubieda, M. L.; Barandiaran, J. M.; Svalov, A.; Sarmiento, G.; Fernandez Barquin, L.; Pedro, I. de; Orue, I.

2009-01-01

The magnetic behavior of sputtered and pulsed laser deposited (PLD) Fe x Ag 100-x thin films with 27≤x≤55 has been studied by means of ac and dc magnetic measurements. Sputtered samples present a continuous decrease in the magnetization, down to 310 K for x=30, where a magnetic transition into a superparamagnetic state with the presence of dipolar interactions is observed. The ac susceptibility measurements indicate that this transition resembles that of three dimensional glassy systems. Sputtered samples with higher concentration of Fe present a similar but slower thermal evolution of magnetization. PLD samples with x≥50 show a Curie-Weiss-type transition above ∼200 K triggered by direct exchange interactions. As the temperature decreases, the system behaves like a ferromagnet and below ∼75 K, a transition into a cluster-glass state appears. As the composition decreases, these phenomena vanish