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Sample records for thin film cigs

A Novel Semiconductor CIGS Photovoltaic Material and Thin-Film ED Technology

Institute of Scientific and Technical Information of China (English)

无

2001-01-01

In order to achieve low-cost high-efficiency thin-film solar cells, a novel Semiconductor Photovoltaic (PV) active material CuIn1-xGaxSe2 (CIGS) and thin-film Electro-Deposition (ED) technology is explored. Firstly,the PV materials and technologies is investigated, then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported. These results shows that high quality CIGS polycrystalline thin-films can be obtained by the ED method, in which the polycrystalline CIGS is definitely identified by the (112), (204, 220) characteristic peaks of the tetragonal structure, the continuous CIGS thin-film layers with particle average size of about 2μm of length and around 1.6μm of thickness. The thickness and solargrade quality of CIGS thin-films can be produced with good repeatability. Discussion and analysis on the ED technique, CIGS energy band and sodium (Na) impurity properties, were also performed. The alloy CIGS exhibits not only increasing band-gap with increasing x, but also a change in material properties that is relevant to the device operation. The beneficial impurity Na originating from the low-cost soda-lime glass substrate becomes one prerequisite for high quality CIGS films. These novel material and technology are very useful for low-cost high-efficiency thin-film solar cells and other devices.
High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

Science.gov (United States)

Rajanikant, Ray Jayminkumar

The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a
Sputtered molybdenum thin films and the application in CIGS solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhou, D.; Zhu, H., E-mail: hongbing1982@hotmail.com; Liang, X.; Zhang, C.; Li, Z.; Xu, Y.; Chen, J.; Zhang, L.; Mai, Y., E-mail: yaohuamai@hbu.edu.cn

2016-01-30

Graphical abstract: - Highlights: • Mo thin films are prepared by magnetron sputtering. • The dynamic deposition rate increases with the increasing discharge power. • The surface structure of Mo films varies with discharge power and working pressure. • High efficiency CIGS thin film solar cell of 15.2% has been obtained. - Abstract: Molybdenum (Mo) thin films are prepared by magnetron sputtering with different discharge powers and working pressures for the application in Cu(In, Ga)Se{sub 2} (CIGS) thin film solar cells as back electrodes. Properties of these Mo thin films are systematically investigated. It is found that the dynamic deposition rate increases with the increasing discharge power while decreases with the increasing working pressure. The highest dynamic deposition rate of 15.1 nm m/min is achieved for the Mo thin film deposited at the discharge power of 1200 W and at the working pressure of 0.15 Pa. The achieved lowest resistivity of 3.7 × 10{sup −5} Ω cm is attributed to the large grains in the compact thin film. The discharge power and working pressure have great influence on the sputtered Mo thin films. High efficiency of 12.5% was achieved for the Cu(In, Ga)Se{sub 2} (CIGS) thin film solar cells with Mo electrodes prepared at 1200 W and low working pressures. By further optimizing material and device properties, the conversion efficiency has reached to 15.2%.
Metal-assisted chemical etching of CIGS thin films for grain size analysis

Energy Technology Data Exchange (ETDEWEB)

Xue, Chaowei [Research and Development Centre, Hanergy Thin Film Power Group Limited, Chengdu (China); Loi, Huu-Ha; Duong, Anh; Parker, Magdalena [Failure Analysis Department, MiaSole Hi-Tech Corp., Santa Clara, CA (United States)

2016-09-15

Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Scale-up issues of CIGS thin film PV modules

Energy Technology Data Exchange (ETDEWEB)

Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, FL 32922 (United States)

2011-01-15

Photovoltaics cost has been declining following a 70% learning curve. Now the challenge is to bring down the cost of solar electricity to make it competitive with conventional sources within the next decade. In the long run, the module efficiencies tend to reach 80% of the champion cell efficiencies. Using a semiempirical methodology, it has been shown earlier that while the triple junction a-Si:H thin film technology is competitive, CIGS and CdTe thin film module technologies are highly competitive and presently offer the best approach for significantly exceeding the cost/performance levels of standard and non-standard crystalline Si PV technologies. Since 2006, the production of thin film solar cell in the U.S. has surpassed that of c-Si. At present, the production of CIGS PV modules lags considerably behind that of CdTe PV modules. This is mainly because of its complexity. Scale-up issues related to various CIGS preparation technologies such as co-evaporation, metallic precursor deposition by magnetron sputtering and non-vacuum techniques such as ink-jet printing, electroplating or doctor-blade technology followed by their selenization/sulfurization are discussed so as to assist the CIGS technology to attain its full potential. Besides the welcome announcements of large volume production, it is essential to achieve the production cost below $1/Wp in the near term and attain production speeds comparable to CdTe production speeds. Comparable production speeds are expected to be achieved within the next decade. This will enable reduction of CIGS module production costs to {proportional_to}65 cents /Wp that would be comparable to the CdTe module projected production cost. Additionally CIGS will have a higher efficiency premium. (author)
CIGS thin film solar cell prepared by reactive co-sputtering

Science.gov (United States)

Kim, Jeha; Lee, Ho-Sub; Park, Nae-Man

2013-09-01

The reactive co-sputtering was developed as a new way of preparing high quality CuInGaSe2(CIGS) films from two sets of targets; Cu0.6Ga 0.4 and Cu0.4In0.6 alloy and Cu and (In0.7Ga0.3)2Se3 compound targets. During sputtering, Cu, In, Ga metallic elements as well as the compound materials were reacted to form CIGS simultaneously in highly reactive elemental Se atmosphere generated by a thermal cracker. CIGS layer had been grown on Mo/soda-lime glass(SLG) at 500°C. For both sets of targets, we controlled the composition of CIGS thin film by changing the RF power for target components. All the films showed a preferential (112) orientation as observed from X-ray diffraction analysis. The composition ratios of CIGS were easily set to 0.71-0.95, 0.10-0.30 for [Cu]/[III] and [Ga]/[III], respectively. The grain size and the surface roughness of a CIGS film increased as the [Cu]/[III] ratios increased. The solar cells were fabricated using a standard base line process in the device structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/ SLG. The best performance was obtained the performance of Voc = 0.45 V, Jsc =35.6, FF = 0.535, η = 8.6% with a 0.9 μm-CIGS solar cell from alloy targets while Voc = 0.54 V, Jsc =30.8, FF = 0.509, η = 8.5% with a 0.8 μm-CIGS solar cell from Cu and (In0.7Ga0.3)2Se3.
Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

Science.gov (United States)

Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

2010-09-01

We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.
Experimental and theoretical investigations of structural and optical properties of CIGS thin films

Energy Technology Data Exchange (ETDEWEB)

Chandramohan, M., E-mail: chandramohan59@yahoo.co.in [Department of Physics, Park college of Engineering and Tecknology, Coimbatore-641 659 (India); Velumani, S., E-mail: vels64@yahoo.com [Centro de Investigacion y de Estudios Avanzados del I.P.N.(CINVESTAV), Av. Instituto Politecnico Nacional 2508 Col. San Pedro Zacatenco 07360, Mexico D.F (Mexico); Venkatachalam, T., E-mail: atvenkatachalam@yahoo.com [Department of Physics, Coimbatore Institute of Technology, Coimbatore-14. India (India)

2010-10-25

Experimental and theoretical studies of the structural and optical properties of Copper Indium Gallium diSelenide thin films have been performed. Thin films of CIGS were deposited on glass substrates by chemical bath deposition. From the XRD results of the films, it is found that the films are of chalcopyrite type structure. The lattice parameter were determined as a = 5.72 A and c = 11.462 A. The optical properties of the thin films were carried out with the help of spectrophotometer. First principles density functional theory calculations of the band structure, density of states and effective masses of electrons and holes of the CIGS crystals have been done by computer simulations. The experimental data and theoretically calculated data have demonstrated good agreement.
Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

Science.gov (United States)

Gułkowski, Sławomir; Krawczak, Ewelina

2017-10-01

Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS) with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.
Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

Directory of Open Access Journals (Sweden)

Gułkowski Sławomir

2017-01-01

Full Text Available Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.
Thin film CIGS solar cells with a novel low cost process - Final report

Energy Technology Data Exchange (ETDEWEB)

Tiwari, A. N.; Romanyuk, Y.

2010-01-15

Novel manufacturing routes for efficient and low-cost Cu(In,Ga)Se{sub 2} (called CIGS) thin film solar cells are explored and patented. CIGS has proven its suitability for highly efficient and extremely stable solar cells. The low-cost methods allow impurity free material synthesis, fast large-area deposition, high material utilization and a very short energy payback time with drastically lower manufacturing costs. Two non-vacuum, solution-based approaches are investigated to deposit thin layers of CIGS. The first approach considers incorporation of copper into indium gallium selenide precursor layers by ion-exchange from aqueous or organic solutions. Organic solutions provide faster copper incorporation and do not corrode the metal back contact. Solar cells processed from selenized precursor films exhibit efficiencies of up to 4.1%. The second approach with paste coating of inorganic salt solution results in a solar cell efficiency of 4% (record 6.7%), where further improvements are hindered by the presence of the residual carbon layer. Using alternative organic binders, pre-deposited selenium layers, non-binder recipes helps to avoid the carbon layer although the obtained layers are inhomogeneous and contain impurity phases. A patent for the ion-exchange approach is pending, and the obtained research results on the paste coating approach will be scrutinized during new European FP7 project 'NOVA-CIGS'. (authors)
Effect of annealing on the structural properties of electron beam deposited CIGS thin films

Energy Technology Data Exchange (ETDEWEB)

Venkatachalam, M. [Department of Electronics, Erode Arts College, Erode (India)], E-mail: prabhu7737@yahoo.com; Kannan, M.D.; Jayakumar, S.; Balasundaraprabhu, R. [Thin Film Center, PSG College of Technology, Coimbatore (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore (India)

2008-08-30

CIGS bulk compound of three different compositions CuIn{sub 0.85}Ga{sub 0.15}Se{sub 2}, CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} and CuIn{sub 0.75}Ga{sub 0.25}Se{sub 2} have been prepared by direct reaction of elemental copper, indium, gallium and selenium. CIGS thin films of the three compositions have been deposited onto glass and silicon substrates using the prepared bulk by electron beam deposition method. The structural properties of the deposited films have been studied using X-ray diffraction technique. The as-deposited CIGS films have been found to be amorphous in nature. To study the effect of annealing on the structural properties, the films have been annealed in vacuum of the order of 10{sup -5} Torr. The X-ray diffractograms of the annealed CIGS films exhibited peaks revealing that the annealed films are crystalline in nature with tetragonal chalcopyrite structure. The (112) peak corresponding to the chalcopyrite structure has been observed to be the dominating peak in all the annealed films. The position of the (112) peak and other peaks in the X-ray diffraction pattern has been observed to shift to higher values of 2{theta} with the increase of gallium concentration. The lattice parameter values 'a' and 'c' have been calculated and they are found to be dependent on the concentration of gallium in the films. The FWHM in the X-ray diffraction pattern is found to decrease with an increase in annealing temperature indicating that the crystalline nature of the CIGS improves with increase in annealing temperature. The films grown on silicon substrates have been found to be of better crystalline quality than those deposited on glass substrates. The micro structural parameters like grain size, dislocation density and strain have been evaluated. The chemical constituents present in the deposited CIGS films have been identified using energy dispersive X-ray analysis. The surface topographical study on the films has been performed by AFM. The
Process parameter impact on properties of sputtered large-area Mo bilayers for CIGS thin film solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Badgujar, Amol C.; Dhage, Sanjay R., E-mail: dhage@arci.res.in; Joshi, Shrikant V.

2015-08-31

Copper indium gallium selenide (CIGS) has emerged as a promising candidate for thin film solar cells, with efficiencies approaching those of silicon-based solar cells. To achieve optimum performance in CIGS solar cells, uniform, conductive, stress-free, well-adherent, reflective, crystalline molybdenum (Mo) thin films with preferred orientation (110) are desirable as a back contact on large area glass substrates. The present study focuses on cylindrical rotating DC magnetron sputtered bilayer Mo thin films on 300 mm × 300 mm soda lime glass (SLG) substrates. Key sputtering variables, namely power and Ar gas flow rates, were optimized to achieve best structural, electrical and optical properties. The Mo films were comprehensively characterized and found to possess high degree of thickness uniformity over large area. Best crystallinity, reflectance and sheet resistance was obtained at high sputtering powers and low argon gas flow rates, while mechanical properties like adhesion and residual stress were found to be best at low sputtering power and high argon gas flow rate, thereby indicating a need to arrive at a suitable trade-off during processing. - Highlights: • Sputtering of bilayer molybdenum thin films on soda lime glass • Large area deposition using rotating cylindrical direct current magnetron • Trade of sputter process parameters power and pressure • High uniformity of thickness and best electrical properties obtained • Suitable mechanical and optical properties of molybdenum are achieved for CIGS application.
Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

International Nuclear Information System (INIS)

Eisenberg, Daniel A.; Yu, Mengjing; Lam, Carl W.; Ogunseitan, Oladele A.; Schoenung, Julie M.

2013-01-01

Highlights: • Comparative alternatives assessment of thin film manufacturing technologies. • Development of chemical alternatives assessment in a life cycle context. • Screening of manufacturing and solar cell hazardous substances simultaneously. -- Abstract: Copper–indium–gallium–selenium–sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals™ and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS 2 p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane
Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Eisenberg, Daniel A.; Yu, Mengjing; Lam, Carl W. [University of California, Davis, 1 Shields Avenue, Davis, CA 95616 (United States); Ogunseitan, Oladele A. [University of California, Irvine, Irvine, CA 92697 (United States); Schoenung, Julie M., E-mail: jmschoenung@ucdavis.edu [University of California, Davis, 1 Shields Avenue, Davis, CA 95616 (United States)

2013-09-15

Highlights: • Comparative alternatives assessment of thin film manufacturing technologies. • Development of chemical alternatives assessment in a life cycle context. • Screening of manufacturing and solar cell hazardous substances simultaneously. -- Abstract: Copper–indium–gallium–selenium–sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals™ and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS{sub 2} p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane.
Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.
Development of CIGS2 thin film solar cells

International Nuclear Information System (INIS)

Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

2005-01-01

Research and development of CuIn 1-x Ga x Se 2-y S y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO 2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H 2 S. Presently large (15 cm x 10 cm) CuIn 1-x Ga x S 2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H 2 S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication
Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser

Directory of Open Access Journals (Sweden)

Dyi-Cheng Chen

2014-07-01

Full Text Available This study used ANSYS simulation software for analyzing an ultraviolet (UV (355 nm laser processing system. The laser apparatus was used in a stainless steel CIGS solar cell P2 layer for simulation analysis. CIGS films process order according to SiO2 layer, molybdenum electrode, CIGS absorbed layer, CdS buffered layer, i-ZnO penetrate light layer, TCO front electrode, MgF resist reflected materials, andelectrode materials. The simulation and experimental results were compared to obtain a laser-delineated P2 laser with a low melting and vaporization temperature. According to the simulation results, the laser function time was 135 μs, the UV laser was 0.5 W, and the P2 layer thin films were removed. The experimental results indicated that the electrode pattern of the experiment was similar to that of the simulation result, and the laser process did not damage the base plate. The analysis results confirm that the laser apparatus is effective when applied to a stainless steel CIGS solar cell P2 layer.
Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes

Czech Academy of Sciences Publication Activity Database

Olejníček, Jiří; Hubička, Zdeněk; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Kohout, Michal; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

2013-01-01

Roč. 16, č. 2 (2013), s. 314-319 ISSN 1203-8407 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HIPIMS * selenization * nanocrystals * solar energy * sputtering * thin films Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.106, year: 2013 http://www.ingentaconnect.com/content/stn/jaots/2013/00000016/00000002/art00015
Nanosecond laser scribing of CIGS thin film solar cell based on ITO bottom contact

Science.gov (United States)

Kuk, Seungkuk; Wang, Zhen; Fu, Shi; Zhang, Tao; Yu, Yi Yin; Choi, JaeMyung; Jeong, Jeung-hyun; Hwang, David J.

2018-03-01

Cu(In,Ga)Se2 (CIGS) thin films, a promising photovoltaic architecture, have mainly relied on Molybdenum for the bottom contact. However, the opaque nature of Molybdenum (Mo) poses limitations in module level fabrication by laser scribing as a preferred method for interconnect. We examined the P1, P2, and P3 laser scribing processes on CIGS photovoltaic architecture on the indium tin oxide (ITO) bottom contact with a cost-effective nanosecond pulsed laser of 532 nm wavelength. Laser illuminated from the substrate side, enabled by the transparent bottom contact, facilitated selective laser energy deposition onto relevant interfaces towards high-quality scribing. Parametric tuning procedures are described in conjunction with experimental and numerical investigation of relevant mechanisms, and preliminary mini-module fabrication results are also presented.

Modelling Defects Acceptors And Determination Of Electric Model From The Nyquist Plot And Bode In Thin Film CIGS

Directory of Open Access Journals (Sweden)

Demba Diallo

2015-08-01

Full Text Available Abstract The performance of the chalcopyrite material CuInGaSe2 CIGS used as an absorber layer in thin-film photovoltaic devices is significantly affected by the presence of native defects. Multivalent defects e.g. double acceptors or simple acceptor are important immaterial used in solar cell production in general and in chalcopyrite materials in particular. We used the thin film solar cell simulation software SCAPS to enable the simulation of multivalent defects with up to five different charge states.Algorithms enabled us to simulate an arbitrary number of possible states of load. The presented solution method avoids numerical inaccuracies caused by the subtraction of two almost equal numbers. This new modelling facility is afterwards used to investigate the consequences of the multivalent character of defects for the simulation of chalcopyrite based CIGS. The capacitance increase with the evolution of the number of defects C- f curves have found to have defect dependence.
Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics.

Science.gov (United States)

Eisenberg, Daniel A; Yu, Mengjing; Lam, Carl W; Ogunseitan, Oladele A; Schoenung, Julie M

2013-09-15

Copper-indium-gallium-selenium-sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS₂ p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane. Copyright © 2013 Elsevier B.V. All rights reserved.
Electrodeposition route to synthesize cigs films – an economical way ...

African Journals Online (AJOL)

Electrodeposition route to synthesize cigs films – an economical way to harness solar energy. ... for solar cells, how the charge separation in this nano scale photovoltaic (PV) materials occurs which help in absorption of radiation, and the electro-deposition route, a low cost one, produces thin film solar cells are analyzed.
Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

Directory of Open Access Journals (Sweden)

Chuan Lung Chuang

2015-01-01

Full Text Available Indium tin oxide (ITO thin films were grown on glass substrates by direct current (DC reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were -1.6E+20 cm−3, 2.7E+01 cm2/Vs, 1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.
CIGS Thin Film Solar Cells, phase 2 Uppsala University Final report 2006-01-01 - 2007-06-14

Energy Technology Data Exchange (ETDEWEB)

Edoff, Marika (Thin Film Solar Cell group, Dep. Technical Sciences, Uppsala Univ., P.O. Box 534, SE-751 21 Uppsala (Sweden)) (and others)

2007-06-15

The project CIGS Thin Film Solar Cells, phase 2 has been going on for 18,5 months and was interrupted in advance on the 14th of June, 2007. The decision to shorten the period was taken by the board of the Swedish Energy Agency the 14th of February. It was decided to reevaluate and re-direct the financial support to the group. A new project, CIGS Thin Film Solar Cells, phase 3, superseded this project and will go on for the initially planned project period (until 2009-12-31). During the project much of the focus has been on research on Cd-free buffer layers, with an emphasis on the interface properties between the CIGS and the buffer layer. (CIGS is a commonly used acronym for Cu(In,Ga)Se{sub 2}, which is the active absorption layer in this type of solar cells) The combination of high quality CIGS and the new buffer layers has been another field of interest. CIGS solar cell module development and computer modelling of solar cells and modules has been the third major research area. The results show that the group still holds a position as one of the leaders in the world in this field. The 18.5 % efficient Cd-free solar cell, which was obtained and independently confirmed is only one percent away from the world record and in addition it is Cd-free using a Zn(O,S) buffer layer (the world record from NREL contains Cd). By alloying ZnO with MgO instead of ZnS almost equally good results can be achieved. During the last half year an 18.1 % cell has been measured with a (Zn,Mg)O buffer layer. Solar cell module technology includes several research issues, both fundamental as e.g. modelling of cell voltage and losses as a function of distance from interconnect to interconnect, but also more development as e.g. encapsulation routines. The harsh environment test (damp heat test) run at 85 deg C and 85 % relative humidity for 1000 hours was passed for both a small (12.5x12.5 cm2) and a large (27.5x30 cm2) module within the degradation limits stated by the IEC standards, using
Significant effect of substrate temperature on the phase structure, optical and electrical properties of RF sputtered CIGS films

Energy Technology Data Exchange (ETDEWEB)

Yu Zhou; Yan Yong; Li Shasha; Zhang Yanxia; Yan Chuanpeng; Liu Lian; Zhang Yong [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhao Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

2013-01-01

Highlights: Black-Right-Pointing-Pointer Secondary phase exist in the RF sputtered CIGS films as it deposited at 150 Degree-Sign C and 500 Degree-Sign C. Black-Right-Pointing-Pointer CIGS films deposited beyond 350 Degree-Sign C show (1 1 2) prefer orientation. Black-Right-Pointing-Pointer E{sub g} of the CIGS films increased with the increase of substrate temperature. Black-Right-Pointing-Pointer Conductivity of the films is affected by 'variable range hopping' mechanism. - Abstract: This work studied the effect of substrate temperature on the phase structure, optical and electrical properties of the one-step radio frequency sputtered Cu(In,Ga)Se{sub 2} (CIGS) thin films. X-ray diffraction (XRD) analysis revealed that all the deposited CIGS films are chalcopyrite phase with polycrystalline structure. The films deposited beyond the substrate temperature of 350 Degree-Sign C show (1 1 2) prefer orientation. Raman spectra reveal that the 150 Degree-Sign C deposited CIGS film coexists with Cu{sub 2-x}Se phase and the 500 Degree-Sign C deposited film contains ordered defect compound (ODC) phase. With the increase of substrate temperature, energy band gap of the CIGS film increase from 0.99 to 1.27 eV. Films deposited at higher temperature exhibit larger electrical conductivity. Conductivity of the CIGS films is dominated by 'variable range hopping' mechanism. The disorder in our CIGS the films is associated with the formation of intrinsic defects such as V{sub Se} and In{sub Cu} for their low formation energy.
Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering

International Nuclear Information System (INIS)

Zhang, Shu; Wu, Lu; Yue, Ruoyu; Yan, Zongkai; Zhan, Haoran; Xiang, Yong

2013-01-01

To investigate the effects of Sb doping on the kinetics of grain growth in Cu(In,Ga)Se 2 (CIGS) thin films during annealing, CIGS thin films were sputtered onto Mo coated substrates from a single CIGS alloy target, followed by chemical bath deposition of Sb 2 S 3 thin layers on top of CIGS layers and subsequent annealing at different temperatures for 30 min in Se vapors. X-ray diffraction results showed that CIGS thin films were obtained directly using the single-target sputtering method. After annealing, the In/Ga ratio in Sb-doped CIGS thin films remained stable compared to undoped film, possibly because Sb can promote the incorporation of Ga into CIGS. The grain growth in CIGS thin films was enhanced after Sb doping, exhibiting significantly larger grains after annealing at 400 °C or 450 °C compared to films without Sb. In particular, the effect was strikingly significant in grain growth across the film thickness, resulting in columnar grain structure in Sb-doped films. This grain growth improvement may be led by the diffusion of Sb from the front surface to the CIGS-Mo back interface, which promoted the mass transport process in CIGS thin films. - Highlights: ► Cu(In,Ga)Se 2 (CIGS) thin films made by sputtering from a single CIGS target. ► Chemical bath deposition used to introduce antimony into CIGS absorber layers. ► In/Ga ratio decreases in Sb-doped annealed films, comparatively to undoped films. ► Sb-doped CIGS films are superior to undoped films in terms of grain-growth kinetics
Supply risks associated with CdTe and CIGS thin-film photovoltaics

International Nuclear Information System (INIS)

Helbig, Christoph; Bradshaw, Alex M.; Kolotzek, Christoph; Thorenz, Andrea; Tuma, Axel

2016-01-01

Highlights: • Supply risks associated with thin film photovoltaic technologies are considered. • Eleven supply risk indicators are used to evaluate Cd, Te, Cu, In, Ga, Se and Mo. • Indicator weighting based on peer assessment and an Analytic Hierarchy Process. • Various possibilities for the aggregation of elemental supply risks discussed. • Aggregated results show a marginally lower supply risk for CdTe than for CIGS. - Abstract: As a result of the global warming potential of fossil fuels there has been a rapid growth in the installation of photovoltaic generating capacity in the last decade. While this market is dominated by crystalline silicon, thin-film photovoltaics are still expected to make a substantial contribution to global electricity supply in future, due both to lower production costs and to recent increases in conversion efficiency. At present, cadmium telluride (CdTe) and copper-indium-gallium diselenide (CuIn_xGa_1_−_xSe_2) seem to be the most promising materials and currently have a share of ≈9% of the photovoltaic market. An expected stronger market penetration by these thin-film technologies raises the question as to the supply risks associated with the constituent elements. Against this background, we report here a semi-quantitative, relative assessment of mid- to long-term supply risk associated with the elements Cd, Te, Cu, In, Ga, Se and Mo. In this approach, the supply risk is measured using 11 indicators in the four categories “Risk of Supply Reduction”, “Risk of Demand Increase”, “Concentration Risk” and “Political Risk”. In a second step, the single indicator values, which are derived from publicly accessible databases, are weighted relative to each other specifically for the case of thin film photovoltaics. For this purpose, a survey among colleagues and an Analytic Hierarchy Process (AHP) approach are used, in order to obtain a relative, element-specific value for the supply risk. The aggregation of these
Annealing enhancement effect by light illumination on proton irradiated Cu(In, Ga)Se2 thin-film solar cells

International Nuclear Information System (INIS)

Kawakita, Shirou; Imaizumi, Mitsuru; Matsuda, Sumio; Yamaguchi, Masafumi; Kushiya, Katsumi; Ohshima, Takeshi; Itoh, Hisayoshi

2002-01-01

In this paper, we investigated the high radiation tolerance of copper indium gallium di-selenide (CIGS) thin-film solar cells by conducting in situ measurements of short circuit current and open circuit voltage of CIGS thin-film solar cells during and after proton irradiation under short circuit condition. We found that the annealing rate of proton-induced defects in CIGS thin-film solar cells under light illumination with an AM0 solar simulator is higher than that under dark conditions. The activation energy of proton-induced defects in the CIGS thin-film solar cells with (without) light illumination is 0.80 eV (0.92 eV), which implies on enhanced defect annealing rate in CIGS thin-film solar cells due to minority-carrier injection. (author)
CIGS thin films, solar cells, and submodules fabricated using a rf-plasma cracked Se-radical beam source

International Nuclear Information System (INIS)

Ishizuka, Shogo; Yamada, Akimasa; Shibata, Hajime; Fons, Paul; Niki, Shigeru

2011-01-01

Coevaporated Cu(In,Ga)Se 2 (CIGS) film growth using a rf-plasma cracked Se-radical beam (R-Se) source leads to a significant reduction in the amount of raw Se source material wasted during growth and exhibits unique film properties such as highly dense, smooth surfaces and large grain size. R-Se grown CIGS solar cells also show concomitant unique properties different from conventional evaporative Se (E-Se) source grown CIGS cells. In the present work, the impact of modified surfaces, interfaces, and bulk crystal properties of R-Se grown CIGS films on the solar cell performance was studied. When a R-Se source was used, Na diffusion into CIGS layers was enhanced while a remarkable diffusion of elemental Ga and Se into Mo back contact layers was observed. Improvements in the bulk crystal quality as manifested by large grain size and increased Na concentration with the use of a R-Se source is expected to be effective to improve photovoltaic performance. Using a R-Se source for the growth of CIGS absorber layers at a relatively low growth temperature, we have successfully demonstrated a monolithically integrated submodule efficiency of 15.0% (17 cells, aperture area of 76.5 cm 2 ) on 0.25-mm thick soda-lime glass substrates.
Photovoltaic manufacturing cost and throughput improvements for thin-film CIGS-based modules: Phase 1 technical report, July 1998--July 1999

Energy Technology Data Exchange (ETDEWEB)

Wiedeman, S.; Wendt, R.G.

2000-03-01

The primary objectives of the Global Solar Energy (GSE) Photovoltaic Manufacturing Technology (PVMaT) subcontract are directed toward reducing cost and expanding the production rate of thin-film CuInGaSe{sub 2} (CIGS)-based PV modules on flexible substrates. Improvements will be implemented in monolithic integration, CIGS deposition, contact deposition, and in-situ CIGS control and monitoring. In Phase 1, GSE has successfully attacked many of the highest risk aspects of each task. All-laser, selective scribing processes for CIGS have been developed, and many end-of-contract goals for scribing speed have been exceeded in the first year. High-speed ink-jet deposition of insulating material in the scribes now appears to be a viable technique, again exceeding some end-of-contract goals in the first year. Absorber deposition of CIGS was reduced corresponding to throughput speeds of up to 24-in/min, also exceeding an end-of-contract goal. Alternate back-contact materials have been identified that show potential as candidates for replacement of higher-cost molybdenum, and a novel, real-time monitoring technique (parallel-detector spectroscopic ellipsometry) has shown remarkable sensitivity to relevant properties of the CIGS absorber layer for use as a diagnostic tool. Currently, one of the bilayers has been baselined by GSE for flexible CIGS on polymeric substrates. Resultant back-contacts meet sheet-resistance goals and exhibit much less intrinsic stress than Mo. CIGS has been deposited, and resultant devices are comparable in performance to pure Mo back-contacts. Debris in the chamber has been substantially reduced, allowing longer roll-length between system cleaning.
Copper zinc tin sulfide-based thin film solar cells

CERN Document Server

Ito, Kentaro

2014-01-01

Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox
Thin Film CIGS Solar Cells, Photovoltaic Modules, and the Problems of Modeling

Directory of Open Access Journals (Sweden)

Antonino Parisi

2013-01-01

Full Text Available Starting from the results regarding a nonvacuum technique to fabricate CIGS thin films for solar cells by means of single-step electrodeposition, we focus on the methodological problems of modeling at cell structure and photovoltaic module levels. As a matter of fact, electrodeposition is known as a practical alternative to costly vacuum-based technologies for semiconductor processing in the photovoltaic device sector, but it can lead to quite different structural and electrical properties. For this reason, a greater effort is required to ensure that the perspectives of the electrical engineer and the material scientist are given an opportunity for a closer comparison and a common language. Derived parameters from ongoing experiments have been used for simulation with the different approaches, in order to develop a set of tools which can be used to put together modeling both at single cell structure and complete module levels.
A high-efficiency solution-deposited thin-film photovoltaic device

Energy Technology Data Exchange (ETDEWEB)

Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

2008-10-02

High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)
An optimized In–CuGa metallic precursors for chalcopyrite thin films

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Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

2013-10-31

We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.
Confinement - assisted shock-wave-induced thin-film delamination (SWIFD) of copper indium gallium diselenide (CIGS) on a flexible substrate

Science.gov (United States)

Lorenz, Pierre; Zagoranskiy, Igor; Ehrhardt, Martin; Han, Bing; Bayer, Lukas; Zimmer, Klaus

2017-12-01

The laser structuring of CIGS (copper indium gallium (di)selenide) solar cell material without influence and damaging the functionality of the active layer is a challenge for laser methods The shock-wave-induced thin-film delamination (SWIFD) process allows structuring without thermal modifications due to a spatial separation of the laser absorption from the functional layer removal process. In the present study, SWIFD structuring of CIGS solar cell stacks was investigated. The rear side of the polyimide was irradiated with a KrF-Excimer laser. The laser-induced ablation process generates a traverse shock wave, and the interaction of the shock wave with the layer-substrate interface results in a delamination process. The effect of a water confinement on the SWIFD process was studied where the rear side of the substrate was covered with a ∼2 mm thick water layer. The resultant surface morphology was analysed and discussed. At a sufficient number of laser pulses N and laser fluences Φ, the CIGS layer can be selectively removed from the Mo back contact. The water confinement, as well as the increasing laser beam size A0 and N, results in the reduction of the necessary minimal laser fluence Φth. Further, the delaminated CIGS area increased with increasing Φ, N, and A0.
Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

Directory of Open Access Journals (Sweden)

Udai P. Singh

2010-01-01

Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.
Hydrazine-based deposition route for device-quality CIGS films

International Nuclear Information System (INIS)

Mitzi, David B.; Yuan, Min; Liu, Wei; Kellock, Andrew J.; Chey, S. Jay; Gignac, Lynne; Schrott, Alex G.

2009-01-01

A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C
Hydrazine-based deposition route for device-quality CIGS films

Energy Technology Data Exchange (ETDEWEB)

Mitzi, David B. [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)], E-mail: dmitzi@us.ibm.com; Yuan, Min; Liu, Wei [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States); Kellock, Andrew J [IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120 (United States); Chey, S Jay; Gignac, Lynne; Schrott, Alex G [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)

2009-02-02

A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C.
Structural and electrical properties of co-evaporated Cu(In,Ga)Se{sub 2} thin films with varied Cu contents

Energy Technology Data Exchange (ETDEWEB)

Kim, Min Young; Kim, Girim; Kim, Jongwan; Park, Jae Hwan; Lim, Donggun, E-mail: dglim@ut.ac.kr

2013-11-01

Cu(In,Ga)Se{sub 2} (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 × 10{sup 16} cm{sup −3}. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. - Highlights: • Improvement of technique to form Cu(In,Ga)Se{sub 2} (CIGS) film by co-evaporation method • Cu/(In + Ga) ratio to improve the efficiency for CIGS thin film solar cell • Cu content effects have been analyzed. • Optimum condition of CIGS layer as an absorber of thin film solar cells.

Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

International Nuclear Information System (INIS)

Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

2011-01-01

Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)
Growth and structural properties of reactively co-sputtered CIGS films and their solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Kim, Jeha [Cheongju University, Cheongju (Korea, Republic of); Park, Nae-Man [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

2014-02-15

Using reactive sputtering, we fabricated stoichiometric CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) thin films. Both Cu{sub 0.6}Ga{sub 0.4} (CuGa) and Cu{sub 0.4}In{sub 0.6} (CuIn) alloy targets were simultaneously sputtered under the delivery of elemental Se produced from a thermal cracker. By changing the sputtering rates of the CuGa and the CuIn, we were able to obtain the composition ratios of Cu/(Ga+In) and Ga/(Ga+In) in the range of 0.71-0.95 and 0.10-0.30, respectively. Both the grain size and the surface roughness of the CIGS film increased as the Cu/(Ga+In) ratio increased. In the X-ray diffraction analysis on CIGS films of 0.9 m, preferential growth with a [112] orientation was found, and reflections from the (211), (220)/(204), (301), (312)/(116), (400)/(008), and (332)/(316) planes were observed. The CIGS films showed the existence of Cu{sub 2-x}Se phases in the Cu-rich samples and ordered defect compound (ODC) phases in the Cu-poor films, as confirmed in the Raman measurements. A best device performance of η = 8.1%, V{sub oc} = 0.442 V, J{sub sc} = 34.3 mA/cm{sup 2}, and FF = 53.4% was obtained from a cell fabricated with a CIGS layer (t = 0.9 μm) with the Cu/(Ga+In) ratio = 0.71 and the Ga/(Ga+In) ratio = 0.10.
Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se{sub 2} thin films investigated by conductive atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Shin, R.H.; Jo, W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Kim, D.W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Ewha Womans University, Department of Chemistry and Nanosciences, Seoul (Korea, Republic of); Yun, Jae Ho; Ahn, S. [Korea Institute of Energy Research, Daejeon (Korea, Republic of)

2011-09-15

Electrical transport properties on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) (Ga/(In+Ga) {approx}35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)
Characterization of in-situ annealed sub-micron thick Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Ko, Byoung-Soo; Sung, Shi-Joon; Hwang, Dae-Kue, E-mail: dkhwang@dgist.ac.kr

2015-09-01

Sub-micron thick Cu(In,Ga)Se{sub 2} (CIGS) thin films were deposited on Mo-coated soda-lime glass substrates under various conditions by single-stage co-evaporation. Generally, the short circuit current (J{sub sc}) decreased with the decreasing thickness of the absorber layer. However, in this study, J{sub sc} was nearly unchanged with decreasing thickness, while the open circuit voltage (V{sub oc}) and fill factor (FF) decreased by 31.9 and 31.1%, respectively. We believe that the remarkable change of V{sub oc} and FF can be attributed to the difference in the total amount of injected thermal energy. Using scanning electron microscopy, we confirmed that the surface morphology becomes smooth and the grain size increased after the annealing process. In the X-ray diffraction patterns, the CIGS thin film also showed an improved crystal quality. We observed that the electric properties were improved by the in-situ annealing of CIGS thin films. The reverse saturation current density of the annealed CIGS solar cell was 100 times smaller than that of reference solar cell. Thus, sub-micron CIGS thin films annealed under a constant Se rate showed a 64.7% improvement in efficiency. - Highlights: • The effects of in-situ annealing the sub-micron CIGS film have been investigated. • The surface morphology and the grain size were improved by in-situ annealing. • The V{sub oc} and FF of the films were increased by about 30% after in-situ annealing. • In-situ annealing of sub-micron thick CIGS films can be improved an efficiency.
Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

2012-08-01

Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.
High efficiency thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

2012-11-01

Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)
Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Babu, B. J.; Egaas, B.; Velumani, S.

2018-03-21

Cu(In1-xGax)Se2 (CIGS) thin films with x=0 (CIS) and x=0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 degrees C, followed by selenization treatment at 550 degrees C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x=0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.
Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization

International Nuclear Information System (INIS)

Kang, San; Sharma, Rahul; Sim, Jae-Kwan; Lee, Cheul-Ro

2013-01-01

Highlights: ► Systematic band gap engineering to fabricate tandem Cu(In,Ga)Se 2 absorption layers. ► XRD shows prominent (1 1 2) reflection shift for attributed CIS, CIGS, and CGS phases. ► Optical transmittance and reflectance spectrum are improved towards infrared region. ► The Cu/In + Ga and Ga/In + Ga effect is matched with highest efficient solar cell. ► Tandem CIS/CIGS/CGS layer, the band gap is increased from 1.15 to 2.06 eV. -- Abstract: Band gap engineering was executed to fabricate a multi-junction stacked i.e. tandem Cu(In,Ga)Se 2 (CIGS) absorption layer. The CIGS absorption layers consist of multi-junction stacked CIS/CIGS/CGS thin films from bottom to top with increasing band gap. Tandem CIGS layers were fabricated by using three precursor of CuIn, In/CuGa/In, and CuGa onto the Mo coated soda-lime glass (SLG) by the sequential sputtering of CuIn, CuGa, and In targets. The CIG precursors were converted into CIGS absorption thin film by selenization process. From the X-ray diffraction (XRD) pattern of CIS/CIGS/CGS tandem layer, with the prominent peak shift for (1 1 2) reflections was attributed to the individual CIS, CIGS, and CGS phases at 26.76°, 27.15°, and 27.65° diffraction angles, respectively. The morphologies and atomic (at%) composition uniformity onto the surface and along the depth were extensively analyzed with field effect scanning electron microscope (FESEM) attached energy dispersive spectroscopy (EDS) and secondary ion mass spectroscopy (SIMS). The optical properties such as transmittance, reflectance and absorbance were found to improve in the infrared region for all the tandem CIGS layers. Near the fundamental absorption edge, the absorption coefficient was approached to 10 5 cm −1 for CIS/CIGS/CGS tandem layer. The straight-line behavior indicates that the films have a direct band gap. The band gap was found to increase from 1.15 to 1.74 eV with the Ga-grading along the depth of individual CIS, CIGS, and CGS thin films
Novel in situ resistance measurement for the investigation of CIGS growth in a selenization process

International Nuclear Information System (INIS)

Liu Wei; He Qing; Li Fengyan; Li Changjian; Sun Yun; Tian Jianguo; Li Zubin

2009-01-01

During the selenization process of CIGS thin films, the relation between the element loss rate and the precursor depositions are analyzed. The growth of the CIGS thin films during the selenization process is investigated by the novel in situ resistance measurement, by which the formation of compound semiconductors can be observed directly and simultaneously. Their structures, phase evolutions and element losses are analyzed by XRD and XRF. Based on the experimental results, it can be concluded that the phase transforms have nothing to do with the deposition sequences of precursors, while the element loss rates are related to the deposition sequences in this process. In addition, element loss mechanisms of CIGS thin films prepared by the selenization process are analyzed by the phase evolutions and chemical combined path in the In, Ga–Se reaction processes. Moreover it is verified that the element losses are depressed by increasing the ramping-up rate finally. The results provide effective methods to fabricate high-quality CIGS thin films with low element losses
Novel in situ resistance measurement for the investigation of CIGS growth in a selenization process

Science.gov (United States)

Liu, Wei; Tian, Jian-Guo; Li, Zu-Bin; He, Qing; Li, Feng-Yan; Li, Chang-Jian; Sun, Yun

2009-03-01

During the selenization process of CIGS thin films, the relation between the element loss rate and the precursor depositions are analyzed. The growth of the CIGS thin films during the selenization process is investigated by the novel in situ resistance measurement, by which the formation of compound semiconductors can be observed directly and simultaneously. Their structures, phase evolutions and element losses are analyzed by XRD and XRF. Based on the experimental results, it can be concluded that the phase transforms have nothing to do with the deposition sequences of precursors, while the element loss rates are related to the deposition sequences in this process. In addition, element loss mechanisms of CIGS thin films prepared by the selenization process are analyzed by the phase evolutions and chemical combined path in the In, Ga-Se reaction processes. Moreover it is verified that the element losses are depressed by increasing the ramping-up rate finally. The results provide effective methods to fabricate high-quality CIGS thin films with low element losses.
Improved quantitative analysis of Cu(In,Ga)Se{sub 2} thin films using MCs{sup +}-SIMS depth profiling

Energy Technology Data Exchange (ETDEWEB)

Lee, Jihye; Kim, Seon Hee; Lee, Kang-Bong; Lee, Yeonhee [Korea Institute of Science and Technology, Advanced Analysis Center, Seoul (Korea, Republic of); Min, Byoung Koun [Korea Institute of Science and Technology, Clean Energy Research Center, Seoul (Korea, Republic of)

2014-06-15

The chalcopyrite semiconductor, Cu(InGa)Se{sub 2} (CIGS), is popular as an absorber material for incorporation in high-efficiency photovoltaic devices because it has an appropriate band gap and a high absorption coefficient. To improve the efficiency of solar cells, many research groups have studied the quantitative characterization of the CIGS absorber layers. In this study, a compositional analysis of a CIGS thin film was performed by depth profiling in secondary ion mass spectrometry (SIMS) with MCs{sup +} (where M denotes an element from the CIGS sample) cluster ion detection, and the relative sensitivity factor of the cluster ion was calculated. The emission of MCs{sup +} ions from CIGS absorber elements, such as Cu, In, Ga, and Se, under Cs{sup +} ion bombardment was investigated using time-of-flight SIMS (TOF-SIMS) and magnetic sector SIMS. The detection of MCs{sup +} ions suppressed the matrix effects of varying concentrations of constituent elements of the CIGS thin films. The atomic concentrations of the CIGS absorber layers from the MCs{sup +}-SIMS exhibited more accurate quantification compared to those of elemental SIMS and agreed with those of inductively coupled plasma atomic emission spectrometry. Both TOF-SIMS and magnetic sector SIMS depth profiles showed a similar MCs{sup +} distribution for the CIGS thin films. (orig.)
Photoelectrochemical water splitting using a Cu(In,Ga)Se{sub 2} thin film

Energy Technology Data Exchange (ETDEWEB)

Yokoyama, Daisuke; Minegishi, Tsutomu; Maeda, Kazuhiko; Katayama, Masao; Kubota, Jun; Domen, Kazunari [Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Yamada, Akira; Konagai, Makoto [Department of Physical Electronics, Graduate School of Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan)

2010-06-15

The effects of surface modification and reaction conditions on the photoelectrochemical properties of polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) thin films for water splitting were studied. CIGS modified with platinum particles (Pt/CIGS) generated a cathodic photocurrent at potentials up to + 0.4 V vs. RHE at pH = 9.5. The photocurrent was stable for 16 h, which resulted in a turnover number of over 500. A CdS-inserted film (Pt/CdS/CIGS) had significantly improved properties compared to Pt/CIGS: a 0.3 V higher onset potential of cathodic photocurrent and a three-fold increase in the quantum efficiency. Our results suggest the feasibility of CIGS as a photocathode for biphotoelectrochemical water splitting. (author)
Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization

Energy Technology Data Exchange (ETDEWEB)

Kang, San; Sharma, Rahul; Sim, Jae-Kwan [Semiconductor Materials Processing Laboratory, School of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Deokjin-dong 664-14, Jeonju 561-756 (Korea, Republic of); Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr [Semiconductor Materials Processing Laboratory, School of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Deokjin-dong 664-14, Jeonju 561-756 (Korea, Republic of)

2013-06-25

Highlights: ► Systematic band gap engineering to fabricate tandem Cu(In,Ga)Se{sub 2} absorption layers. ► XRD shows prominent (1 1 2) reflection shift for attributed CIS, CIGS, and CGS phases. ► Optical transmittance and reflectance spectrum are improved towards infrared region. ► The Cu/In + Ga and Ga/In + Ga effect is matched with highest efficient solar cell. ► Tandem CIS/CIGS/CGS layer, the band gap is increased from 1.15 to 2.06 eV. -- Abstract: Band gap engineering was executed to fabricate a multi-junction stacked i.e. tandem Cu(In,Ga)Se{sub 2} (CIGS) absorption layer. The CIGS absorption layers consist of multi-junction stacked CIS/CIGS/CGS thin films from bottom to top with increasing band gap. Tandem CIGS layers were fabricated by using three precursor of CuIn, In/CuGa/In, and CuGa onto the Mo coated soda-lime glass (SLG) by the sequential sputtering of CuIn, CuGa, and In targets. The CIG precursors were converted into CIGS absorption thin film by selenization process. From the X-ray diffraction (XRD) pattern of CIS/CIGS/CGS tandem layer, with the prominent peak shift for (1 1 2) reflections was attributed to the individual CIS, CIGS, and CGS phases at 26.76°, 27.15°, and 27.65° diffraction angles, respectively. The morphologies and atomic (at%) composition uniformity onto the surface and along the depth were extensively analyzed with field effect scanning electron microscope (FESEM) attached energy dispersive spectroscopy (EDS) and secondary ion mass spectroscopy (SIMS). The optical properties such as transmittance, reflectance and absorbance were found to improve in the infrared region for all the tandem CIGS layers. Near the fundamental absorption edge, the absorption coefficient was approached to 10{sup 5} cm{sup −1} for CIS/CIGS/CGS tandem layer. The straight-line behavior indicates that the films have a direct band gap. The band gap was found to increase from 1.15 to 1.74 eV with the Ga-grading along the depth of individual CIS, CIGS
Toward GW/year of CIGS production within the next decade

Energy Technology Data Exchange (ETDEWEB)

Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, FL 32922-5703 (United States)

2007-09-22

A detailed study carried out in 1996-1997 showed that manufacturing cost of crystalline silicon PV modules could be lowered to 1 ECU/Wp when the c-Si annual module production level reaches 500 MWp while an annual production of only 60 MWp would lower production cost of thin-film PV modules to 0.6 ECU/Wp. During 1976-2003, the PV module price has followed the 80% learning curve with cumulative production volume. However, the price reduction has slowed since because of the polysilicon supply problem. Because of their high potential for improvement, thin-film PV and especially copper (Cu)-indium (In)-gallium (Ga)-selenide (Se)-sulfide (CIGS) technology have the potential for growing at the fastest rate and consequently not only to complement the lagging c-Si PV production but also to assist in following the 80% learning curve. This paper reviews the CIGS PV manufacturing processes in comparison to those of other PV technologies and predicts that annual production volume of CIGS thin-film PV modules will exceed 1 GW/year within the next 10 years. (author)
Toward GW/year of CIGS production within the next decade

International Nuclear Information System (INIS)

Dhere, Neelkanth G.

2007-01-01

A detailed study carried out in 1996-1997 showed that manufacturing cost of crystalline silicon PV modules could be lowered to 1 ECU/Wp when the c-Si annual module production level reaches 500 MWp while an annual production of only 60 MWp would lower production cost of thin-film PV modules to 0.6 ECU/Wp. During 1976-2003, the PV module price has followed the 80% learning curve with cumulative production volume. However, the price reduction has slowed since because of the polysilicon supply problem. Because of their high potential for improvement, thin-film PV and especially copper (Cu)-indium (In)-gallium (Ga)-selenide (Se)-sulfide (CIGS) technology have the potential for growing at the fastest rate and consequently not only to complement the lagging c-Si PV production but also to assist in following the 80% learning curve. This paper reviews the CIGS PV manufacturing processes in comparison to those of other PV technologies and predicts that annual production volume of CIGS thin-film PV modules will exceed 1 GW/year within the next 10 years. (author)
Mg-doped ZnO thin films deposited by the atomic layer chemical vapor deposition for the buffer layer of CIGS solar cell

Energy Technology Data Exchange (ETDEWEB)

Li, Zhao-Hui [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Center for Photovoltaic and Solar Energy, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen city 518055 (China); Cho, Eou-Sik [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@gachon.ac.kr [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of)

2014-09-30

Highlights: • Mg-doped ZnO film as CIGS buffer was prepared by ALD process. • The grain size of ZnO-like hexagonal phase decreased with Mg content. • The transmittance and crystallinity increased but the band gap decreased with temperature. - Abstract: Mg-doped ZnO [(Zn, Mg)O] thin films were prepared by atomic layer chemical vapor deposition (ALCVD) process with different Mg content, using diethyl zinc, biscyclopentadienyl magnesium, and water as the metal and oxygen sources, respectively. The ratio of Mg to Zn was varied by changing the pulse ratio of MgCp{sub 2} to DEZn precursor to study its effect on the properties of (Zn, Mg)O thin films. From the experimental results, it was shown that the grain size of the ZnO-like hexagonal phase (Zn, Mg)O decreased as the Mg content increased. But the transmittance and optical band gap of (Zn, Mg)O films increased with the increase of the Mg content. In addition, the effect of the substrate temperature on the properties of (Zn, Mg)O films was also investigated. The deposition rate, transmittance, and crystallinity of (Zn, Mg)O films increased as the substrate temperature increased. But its band gap decreased slightly with the increase of substrate temperature.
Generation of electrical defects in ion beam assisted deposition of Cu(In,Ga)Se2 thin film solar cells

International Nuclear Information System (INIS)

Zachmann, H.; Puttnins, S.; Daume, F.; Rahm, A.; Otte, K.

2011-01-01

Thin films of Cu(In,Ga)Se 2 (CIGS) absorber layers for thin film solar cells have been manufactured on polyimide foil in a low temperature, ion beam assisted co-evaporation process. In the present work a set of CIGS thin films was produced with varying selenium ion energy. Solar cell devices have been manufactured from the films and characterized via admittance spectroscopy and capacitance-voltage profiling to determine the influence of the selenium ion energy on the electric parameters of the solar cells. It is shown that the impact of energetic selenium ions in the CIGS deposition process leads to a change in the activation energy and defect density and also in the spatial distribution of electrically active defects. For the interpretation of the results two defect models are taken into account.
Electrochemical etching of molybdenum for shunt removal in thin film solar cells

NARCIS (Netherlands)

Hovestad, A.; Bressers, P.M.M.C.; Meertens, R.M.; Frijters, C.H.; Voorthuijzen, W.P.

2015-01-01

High yield and reproducible production is a major challenge in up-scaling thin film Cu(In,Ga)Se2(CIGS) solar cells to large area roll-to-roll industrial manufacturing. Pinholes enabling Ohmic contact between the ZnO:Al front-contact and Mo back contact of the CIGS cell create electrical shunts that
Degradation of CIGS solar cells

NARCIS (Netherlands)

Theelen, M.J.

2015-01-01

Thin film CIGS solar cells and individual layers within these solar cells have been tested in order to assess their long term stability. Alongside with the execution of standard tests, in which elevated temperatures and humidity levels are used, the solar cells have also been exposed to a
Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

Science.gov (United States)

Albin, David S.; Noufi, Rommel

2015-06-09

Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

A Comprehensive Study of One-Step Selenization Process for Cu(In1-x Ga x )Se2 Thin Film Solar Cells.

Science.gov (United States)

Chen, Shih-Chen; Wang, Sheng-Wen; Kuo, Shou-Yi; Juang, Jenh-Yih; Lee, Po-Tsung; Luo, Chih Wei; Wu, Kaung-Hsiung; Kuo, Hao-Chung

2017-12-01

In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn 1-x Ga x Se 2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H 2 Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe 2 layer was also observed. Due to the significant microstructural improvement, the current-voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.
Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

Energy Technology Data Exchange (ETDEWEB)

Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

2011-09-01

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.
The influence of different locations of sputter guns on the morphological and structural properties of Cu–In–Ga precursors and Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Wang, J.; Zhu, J., E-mail: jiezhu@ustb.edu.cn; He, Y.X.

2014-01-01

The influence of two different locations of sputter guns on the morphological and structural properties of Cu–In–Ga precursors and Cu(In,Ga)Se{sub 2} (CIGS) thin films was investigated. All the precursors contained cauliflower-like nodules, whereas smaller subnodules were observed on the background. All the precursors revealed apparent three-layered structures, and voids were observed at the CIGS/SLG interface of Sets 1 and 2 films rather than Set 3 film. EDS results indicated that all CIGS thin films were Cu-deficient. Based on the grazing incidence X-ray diffraction (GIXRD) patterns, as-selenized films showed peaks corresponding to the chalcopyrite-type CIGS structure. Depth-resolved Raman spectra showed the formation of a dominant CIGS phase inside the films for all the as-selenized samples investigated, and of an ordered vacancy compound (OVC) phase like Cu(In,Ga){sub 3}Se{sub 5} or Cu(In,Ga){sub 2}Se{sub 3.5} at the surface and/or CIGS/SLG interface region of Sets 2 and 3 films. No evidence was obtained on the presence of an OVC phase in Set 1 CIGS film, which may be speculated that long-time annealing is contributed to suppress the growth of OVC phases. The results of the present work suggest that the metallic precursors deposited with the upright-location sputter gun might be more appropriate to prepare CIGS thin films than those sputtered with the titled-location gun.
Complementary Characterization of Cu(In,Ga)Se₂ Thin-Film Photovoltaic Cells Using Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Atom Probe Tomography.

Science.gov (United States)

Jang, Yun Jung; Lee, Jihye; Jeong, Jeung-Hyun; Lee, Kang-Bong; Kim, Donghwan; Lee, Yeonhee

2018-05-01

To enhance the conversion performance of solar cells, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is required. In this study, we determined the average concentration of the major elements (Cu, In, Ga, and Se) in fabricated Cu(In,Ga)Se2 (CIGS) thin films, using inductively coupled plasma atomic emission spectroscopy, X-ray fluorescence, and wavelengthdispersive electron probe microanalysis. Depth profiling results for CIGS thin films with different cell efficiencies were obtained using secondary ion mass spectrometry and Auger electron spectroscopy to compare the atomic concentrations. Atom probe tomography, a characterization technique with sub-nanometer resolution, was used to obtain three-dimensional elemental mapping and the compositional distribution at the grain boundaries (GBs). GBs are identified by Na increment accompanied by Cu depletion and In enrichment. Segregation of Na atoms along the GB had a beneficial effect on cell performance. Comparative analyses of different CIGS absorber layers using various analytical techniques provide us with understanding of the compositional distributions and structures of high efficiency CIGS thin films in solar cells.
In Situ and Ex Situ Studies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells

Directory of Open Access Journals (Sweden)

K. Aryal

2012-01-01

Full Text Available Molybdenum thin films were deposited by rf and dc magnetron sputtering and their properties analyzed with regards to their potential application as a back contact for CIGS solar cells. It is shown that both types of films tend to transition from tensile to compressive strain when the deposition pressure increases, while the conductivity and the grain size decreas. The nucleation of the films characterized by in situ and real time spectroscopic ellipsometry shows that both films follow a Volmer-Weber growth, with a higher surface roughness and lower deposition rate for the rf deposited films. The electronic relaxation time was then extracted as a function of bulk layer thickness for rf and dc films by fitting each dielectric function to a Drude free-electron model combined with a broad Lorentz oscillator. The values were fitted to a conical growth mode and demonstrated that the rf-deposited films have already smaller grains than the dc films when the bulk layer thickness is 30 nm.
Degradation analysis of thin film photovoltaic modules

International Nuclear Information System (INIS)

Radue, C.; Dyk, E.E. van

2009-01-01

Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P MAX ) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 ∼30% and a total degradation of ∼42%. For Si-2 the initial P MAX was 7.93 W, with initial light-induced degradation of ∼10% and a total degradation of ∼17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.
Degradation analysis of thin film photovoltaic modules

Energy Technology Data Exchange (ETDEWEB)

Radue, C., E-mail: chantelle.radue@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

2009-12-01

Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P{sub MAX}) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 approx30% and a total degradation of approx42%. For Si-2 the initial P{sub MAX} was 7.93 W, with initial light-induced degradation of approx10% and a total degradation of approx17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.
Microstructural evolution of all-wet-processed CIGS films using Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Choi, Hee Soo; Choi, Eunmi; Kim, Areum; Pyo, Sung Gyu [School of Integrative Engineering, Chung-Ang University, 221 Heukseok-Dong, Seoul, 156-756 (Korea, Republic of); Yoon, Sung Pil [Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of)

2014-08-15

We report a wet process deposition in order to identify a cost-effective processing scheme for CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) layers on molybdenum/soda lime glass substrates from a Cu-In-Ga precursor solution. We employed a spin coater at various settings to evaluate the uniformity of the resulting CIGS solar cell layer. After the CIGS precursor film was deposited, we applied a selenization process. In the selenization process, we used a controlled temperature RTA system and compared it to a noncontrolled temperature system. We investigated the morphological properties for different selenization temperature treatments. We used Raman mapping to detect binary compounds and found the binary compound effect on the film. Raman mapping results show that the density of the binary compound in the CIGS layer increased with selenization temperature, and at 600 C, the density of the binary compounds was highest. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Band gap grading and photovoltaic performance of solution-processed Cu(In,Ga)S2 thin-film solar cells.

Science.gov (United States)

Sohn, So Hyeong; Han, Noh Soo; Park, Yong Jin; Park, Seung Min; An, Hee Sang; Kim, Dong-Wook; Min, Byoung Koun; Song, Jae Kyu

2014-12-28

The photophysical properties of CuInxGa1-xS2 (CIGS) thin films, prepared by solution-based coating methods, are investigated to understand the correlation between the optical properties of these films and the electrical characteristics of solar cells fabricated using these films. Photophysical properties, such as the depth-dependent band gap and carrier lifetime, turn out to be at play in determining the energy conversion efficiency of solar cells. A double grading of the band gap in CIGS films enhances solar cell efficiency, even when defect states disturb carrier collection by non-radiative decay. The combinational stacking of different density films leads to improved solar cell performance as well as efficient fabrication because a graded band gap and reduced shunt current increase carrier collection efficiency. The photodynamics of minority-carriers suggests that the suppression of defect states is a primary area of improvement in CIGS thin films prepared by solution-based methods.
Thin-Film CIGS Photovoltaic Technology: Annual Technical Report-Phase II, 16 April 1999-15 April 2000

Energy Technology Data Exchange (ETDEWEB)

Delahoy, A.E.; Bruns, J.; Ruppert, A.; Akhtar, M.; Chen, L.; Kiss, Z.J.

2000-08-24

A summary of Energy Photovoltaics' Phase II work includes the following: (1) EPV has demonstrated that it can sputter a Mo back-contact capable of supporting very high efficiency cell processing. Using EPV Mo, NREL has deposited a 17.1% CIGS cell (no AR coating). EPV believes it can identify the signature of ``good'' Mo. The Mo was produced on EPV's 0.43 m{sup 2} pilot-line equipment; (2) EPV has performed compound synthesis for several classes of materials, namely non-Cu precursor materials, Cu-containing materials, and ternary buffer materials. Using a ternary compound synthesized at EPV (ZIS) as an evaporation source material for the buffer layer, a Cd-free CIGS device has been produced having an efficiency of 11.5% (560 mV, 32.1 mA/cm{sup 2}, FF 64.3%). The ZIS films are photoconductive, and the devices exhibit no dark-light crossover or light soaking effects; (3) EPV initiated the interest of the University of Oregon in capacitance spectroscopy of CIGS devices. An Urbach tail with characteristic energy E0 < 20meV was identified by transient photocapacitance spectroscopy; (4) Small-area CIGS devices were produced in the pilot-line system with an efficiency of 12.0% (581 mV, 30.1 mA/cm{sup 2}, FF 68.7%), and in an R and D-scale system with 13.3% efficiency (569 mV, 34.1 mA/cm{sup 2}, FF 68.1%); (5) An improved linear evaporation source for Cu delivery has been developed and was used for CIGS formation in the pilot-line system. The deposition width is 45 cm. This technological ``tour de force'' allows EPV to build large-area CIGS systems possessing considerable flexibility. In particular, both EPV's FORNAX process and NREL's 3-stage process have been implemented on the pilot line. A CIGS thickness uniformity of 7% over a 40 cm width has been achieved; (6) A 4-head linear source assembly was designed, constructed, and is in use. Flux monitoring is practiced; (7) Large-area CIGS modules were produced with Voc's up to 36
Thin-Film CIGS Photovoltaic Technology; Annual Technical Report, Phase I; 16 April 1998 - 15 April 1999

International Nuclear Information System (INIS)

Chorobski, D.; Delahoy, A.E.; Kiss, Z.J.; Ziobro, F.

1999-01-01

This report describes work performed by Energy Photovoltaics, Inc. (EPV) under Phase I of this subcontract. EPV's new FORNAX process for CIGS formation is capable of producing devices with high Voc ( and gt;600 mV) and no dark aging effects. Parameters of the best device so far are Voc= 611 mV, Jsc= 27.5 mA/cm2, FF= 74.5%, and efficiency= 12.5%. A 34-cm2 16-cell minimodule was produced using FORNAX CIGS with Voc= 9.58 V, Isc= 52.0 mA, FF69.8%, and efficiency= 10.2%. A new version of EPV's linear evaporation source was developed with improved rate and uniformity for Cu deposition over a width of 45 cm. Using the new linear source, the FORNAX process was implemented on 0.43-m2 substrates in EPV's CIGS pilot line, with Voc= 537 mV and FF= 70.3% being achieved on a device. The EPV Subteam of the National CIS R and D Team has produced Cd-free ZnO/CIGS devices on NREL CIGS using the ROMEAO process (reaction of metal and atomic oxygen) for ZnO deposition. After soaking, the best device exhibited a Voc of 565 mV and an efficiency of 12.3%. Novel bias drive methods were devised for field soaking/anti-soaking experiments as a function of time and temperature. Scaling laws and an activation energy of 0.51 eV were found. Thermally stimulated capacitance reveals the existence of three distinct contributions to ZnO/CIGS device capacitance, two appearing to be gap-state effects and one related to net doping concentration. The coating time of the sputtered pilot-line ZnO:Al has been reduced by a factor of 3 while maintaining film quality. The deposition rate is 48 A s-1. Plans are under way to increase the substrate size from 0.43 m2 to 0.79 m2
Adhesion Improvement and Characterization of Magnetron Sputter Deposited Bilayer Molybdenum Thin Films for Rear Contact Application in CIGS Solar Cells

Directory of Open Access Journals (Sweden)

Weimin Li

2016-01-01

Full Text Available Molybdenum (Mo thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP deposited bottom layer and a low pressure (LP deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.
Thin-Film CIGS Photovoltaic Technology: Annual Technical Report-Phase II, 16 April 1999-15 April 2000; ANNUAL

International Nuclear Information System (INIS)

Delahoy, A.E.; Bruns, J.; Ruppert, A.; Akhtar, M.; Chen, L.; Kiss, Z.J.

2000-01-01

A summary of Energy Photovoltaics' Phase II work includes the following: (1) EPV has demonstrated that it can sputter a Mo back-contact capable of supporting very high efficiency cell processing. Using EPV Mo, NREL has deposited a 17.1% CIGS cell (no AR coating). EPV believes it can identify the signature of''good'' Mo. The Mo was produced on EPV's 0.43 m(sup 2) pilot-line equipment; (2) EPV has performed compound synthesis for several classes of materials, namely non-Cu precursor materials, Cu-containing materials, and ternary buffer materials. Using a ternary compound synthesized at EPV (ZIS) as an evaporation source material for the buffer layer, a Cd-free CIGS device has been produced having an efficiency of 11.5% (560 mV, 32.1 mA/cm(sup 2), FF 64.3%). The ZIS films are photoconductive, and the devices exhibit no dark-light crossover or light soaking effects; (3) EPV initiated the interest of the University of Oregon in capacitance spectroscopy of CIGS devices. An Urbach tail with characteristic energy E0 and lt; 20meV was identified by transient photocapacitance spectroscopy; (4) Small-area CIGS devices were produced in the pilot-line system with an efficiency of 12.0% (581 mV, 30.1 mA/cm(sup 2), FF 68.7%), and in an R and D-scale system with 13.3% efficiency (569 mV, 34.1 mA/cm(sup 2), FF 68.1%); (5) An improved linear evaporation source for Cu delivery has been developed and was used for CIGS formation in the pilot-line system. The deposition width is 45 cm. This technological''tour de force'' allows EPV to build large-area CIGS systems possessing considerable flexibility. In particular, both EPV's FORNAX process and NREL's 3-stage process have been implemented on the pilot line. A CIGS thickness uniformity of 7% over a 40 cm width has been achieved; (6) A 4-head linear source assembly was designed, constructed, and is in use. Flux monitoring is practiced; (7) Large-area CIGS modules were produced with Voc's up to 36.3 V; (8) EPV has started to construct an
2D Finite Element Model of a CIGS Module

Energy Technology Data Exchange (ETDEWEB)

Janssen, G.J.M.; Slooff, L.H.; Bende, E.E. [ECN Solar Energy, P.O.Box 1, NL-1755 ZG Petten (Netherlands)

2012-06-15

The performance of thin-film CIGS (Copper indium gallium selenide) modules is often limited due to inhomogeneities in CIGS layers. A 2-dimensional Finite Element Model for CIGS modules is presented that predicts the impact of such inhomogeneities on the module performance. Results are presented of a module with a region of poor diode characteristics. It is concluded that according to this model the effects of poor diodes depend strongly on their location in the module and on their dispersion over the module surface. Due to its generic character the model can also be applied to other series connections of photovoltaic cells.
2D - Finite element model of a CIGS module

Energy Technology Data Exchange (ETDEWEB)

Janssen, G.J.M.; Slooff, L.H.; Bende, E.E. [ECN Solar Energy, Petten (Netherlands)

2012-09-15

The performance of thin-film CIGS modules is often limited due to inhomogeneities in CIGS layers. A 2-dimensional Finite Element Model for CIGS modules is demonstrated that predicts the impact of such inhomogeneities on the module performance. Results are presented of a module with a region of poor diode characteristics. It is concluded that according to this model the effects of poor diodes depend strongly on their location in the module and on their dispersion over the module surface. Due to its generic character the model can also be applied to other series connections of photovoltaic cells.
TEMPERATURE EFFECT OF ELECTRICAL PROPERTIES OF CIGS ...

African Journals Online (AJOL)

2011-06-30

Jun 30, 2011 ... Key words: Thin film solar cells, SCAPS, CIGS, temperature, effiency energetic. 1. INTRODUCTION ... technology are the low material consumption and the high efficiency that has been demonstrated, which .... [2] S. Wenham, M. Green, M. Watt, Applied Photovoltaics, The University of New. South Wales ...
Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,Ga)Se2

OpenAIRE

Michael Powalla; Stefan Paetel; Dimitrios Hariskos; Roland Wuerz; Friedrich Kessler; Peter Lechner; Wiltraud Wischmann; Theresa Magorian Friedlmeier

2017-01-01

In this article, we discuss the leading thin-film photovoltaic (PV) technology based on the Cu(In,Ga)Se2 (CIGS) compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS techno...
Development of CIGS2 solar cells with lower absorber thickness

Energy Technology Data Exchange (ETDEWEB)

Vasekar, Parag S.; Dhere, Neelkanth G. [Florida Solar Energy Center, University of Central Florida, 1679 Clearlake Rd., Cocoa, FL 32922 (United States); Moutinho, Helio [National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401 (United States)

2009-09-15

The availability and cost of materials, especially of indium can be a limiting factor as chalcopyrite based thin-film solar cells advance in their commercialization. The required amounts of metals can be lowered by using thinner films. When the thickness of the film decreases, there is possibility of remaining only in the small grain region because the coalescence of grains does not have an opportunity to enhance the grain size to the maximum. Solar cell performance in smaller grain chalcopyrite absorber deteriorates due to larger fraction of grain boundaries. Efforts are being made to reduce the thickness while maintaining the comparable performance. This work presents a study of preparation, morphology and other material properties of CIGS2 absorber layers with decreasing thicknesses up to 1.2 {mu}m and its correlation with the device performance. Encouraging results were obtained demonstrating that reasonable solar cell efficiencies (>10%) can be achieved even for thinner CIGS2 thin-film solar cells. (author)
Effect of bath temperature on the properties of CuIn{sub x}Ga{sub 1-x} Se{sub 2} thin films grown by the electrodeposition technique

Energy Technology Data Exchange (ETDEWEB)

Cao Jie; Qu Shengchun; Liu Kong; Wang Zhanguo, E-mail: qsc@semi.ac.c [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2010-08-15

Electrodeposition is a promising and low cost method to synthesize CuIn{sub x} Ga{sub 1-x} Se{sub 2} (CIGS)thin films as an absorber layer for solar cells. The effect of bath temperature on the properties of CIGS thin films was investigated in this paper. CIGS films of 1 {mu}m thickness were electrodeposited potentiostatically from aqueous solution, containing trisodium citrate as a complexing agent, on Mo/glass substrate under a voltage of -0.75 V, and bath temperatures were varied from 20 to 60{sup 0}C. The effects of bath temperature on the properties of CIGS thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy. XRD revealed the presence of the CuIni{sub 0.7}Ga{sub 0.3} Se{sub 2} phase, the optimal phase for application in solar cells. The grain dimensions and crystallizability increase along with the increase of the bath temperature, and the films become stacked and homogeneous. There were few changes in surface morphology and the composition of the films. (semiconductor materials)
Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

Energy Technology Data Exchange (ETDEWEB)

Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Pu, Nen-Wen, E-mail: nwpuccit@gmail.com [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Liang, Shih-Chang [Materials & Electro-Optics Research Division, National Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan (China)

2015-11-01

Highlights: • Ti-doped indium tin oxide (ITO) films were deposited by DC magnetron sputtering. • Optimal optoelectronic properties were achieved at a sputtering power of 100 W. • Resistivity = 3.2 × 10{sup −4} Ω-cm without substrate heating or post growth annealing. • Mean visible and NIR transmittances of 83 and 80%, respectively, were achieved. • Efficient batteries (11.3%) were fabricated by applying ITO:Ti to CIGS solar cells. - Abstract: In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputtering deposition method. The thin films were grown without introducing oxygen or heating the substrate, and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films (350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results, the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of 100 W, yielding a reduced resistivity of 3.2 × 10{sup −4} Ω-cm and a mean high transmittance of 83% at wavelengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se{sub 2} solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of 33.1 mA/cm{sup 2}, an open-circuit voltage of 0.54 V, and a fill factor of 0.64.

Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (CuInSe2 based PV cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (CuInSe2 taiyo denchi seizo no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on the fabrication technology of CuInSe2 based PV cell in fiscal 1994. (1) On formation of high-quality CIGS thin films by bilayer method, Mo film was deposited on a glass substrate by sputtering, and CIGS film with different Ga/In ratios was next formed on the substrate by quaternary simultaneous deposition at different In and Ga deposition speeds. In addition, CdS film was deposited on the CIGS film, and ZnO and ITO films were finally deposited on it by sputtering to complete solar cell. This solar cell offered the maximum conversion efficiency among cells using CIGS film. (2) On formation of high-quality CIGS thin films by three-stage method, a certain correlation was found between substrate temperature and CIGS film composition by monitoring substrate temperature in film forming process. This phenomenon allowed rigorous control of CIS film compositions important for CIS thin film solar cells. (3) On low-cost process technology for thin film formation, Cu(In,Ga)S2 solid solution film was fabricated by expanded selenic process. 3 figs.
Individual identification of free hole and electron dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films by simultaneous monitoring of two optical transitions

Energy Technology Data Exchange (ETDEWEB)

Okano, Makoto [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Hagiya, Hideki; Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Shibata, Hajime; Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Kanemitsu, Yoshihiko, E-mail: kanemitu@scl.kyoto-u.ac.jp [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Japan Science and Technology Agency, CREST, Kyoto University, Uji, Kyoto 611-0011 (Japan)

2015-05-04

The photocarrier dynamics of CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) thin films were studied using white-light transient absorption (TA) measurements, as an understanding of this behavior is essential for improving the performance of solar cells composed of CIGS thin films. A characteristic double-peak structure due to the splitting of the valence bands in the CIGS was observed in the TA spectra under near-band-gap resonant excitation. From a comparison of the TA decay dynamics monitored at these two peaks, it was found that the slow-decay components of the electron and hole relaxation are on the nanosecond timescale. This finding is clear evidence of the long lifetimes of free photocarriers in polycrystalline CIGS thin films.
Influence of post-treatment on properties of Cu(In{sub ,}Ga)Se{sub 2} thin films deposited by RF magnetron sputtering using a quaternary single target for photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Jung, Sung Hee; Choi, Soon Ja; Chung, Chee Won, E-mail: cwchung@inha.ac

2014-11-03

The deposition of Cu(In,Ga)Se{sub 2} (CIGS) thin films has been performed by one-step RF sputtering using a single quaternary target and followed by sulfurization to incorporate S into CIGS films. The effect of sulfurization temperature and time on the properties of the films was studied. The sulfurized Cu(In,Ga)(Se,S){sub 2} (CIGSeS) films show that the chalcopyrite peaks shifted to high diffraction angles and the CuS and InS second phases could be formed at low sulfurization temperature. These indicate possible incorporation of S into the films. The formation and disappearance of these second phases depended on the sulfurization temperature and time. The band gap increased with increasing sulfurization temperature and time because of the shift of the absorption edge due to the increase of S/(S + Se) ratio. It was revealed that the resistivity of the as-deposited CIGS film increased after sulfurization while the carrier concentration and mobility decreased. It is believed that the sulfurization process of CIGS films can be utilized as a method to control the properties of the films. - Highlights: • Development of sputtering process of CIGS thin films using single quaternary target • Effect of sulfurization temperature and time on the properties of CIGS films • Application of sulfurization process to improve the properties of CIGS films • Successful transformation of CIGS films to chalcopyrite structure through post-sulfirization.
Nd:YAG laser annealing investigation of screen-printed CIGS layer on PET: Layer annealing method for photovoltaic cell fabrication process

KAUST Repository

Alsaggaf, Ahmed; Alarousu, Erkki; Boulfrad, Samir; Rothenberger, Alexander

2014-01-01

by heat treatment using a Nd:YAG laser. The structure and morphology of the heated thin films were studied. The characterization of the CIGS powder, ink, and film was done using TGA, SEM, FIB, EDS, and XRD. TGA analysis shows that the CIGS ink is drying
Modeling and simulation of a dual-junction CIGS solar cell using Silvaco ATLAS

OpenAIRE

Fotis, Konstantinos

2012-01-01

Approved for public release; distribution is unlimited. The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell, using a CIGS bottom cell and different thin-film designs as a top cell, was conducted in order to increase the current record efficiency of 20.3% for a single CIGS cell. This was accomplished through modeling and simulation using Silvaco ATLASTM, an ad...
One-pot Synthesis of Soluble Nanoscale CIGS Photoactive Functional Materials

Directory of Open Access Journals (Sweden)

Yan Aixia

2007-01-01

Full Text Available Abstract Promising alternatives for solar energy utilization are thin film technologies involving various new materials. This contribution describes an easy and inexpensive synthetic method that can be used to prepare soluble nanoscale triphenyl phosphine-coordinated CIGS (TPP-CIGS photoactive functional materials. This complex is stable in the solid state under the irradiation of the ambient light, but its solution becomes a little bit unstable under the illumination of the low intensity laser.
Deposition and characterization of graded Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Babu, B.J. [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Avenida IPN 2508, San Pedro Zacatenco, D.F. C.P 07360 (Mexico); Institute of Molecules and Materials, UMR-CNRS 6283, Université du Maine, Avenue O. Messiaen, F-72085 Le Mans (France); Velumani, S., E-mail: velu@cinvestav.mx [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Avenida IPN 2508, San Pedro Zacatenco, D.F. C.P 07360 (Mexico); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kassiba, A. [Institute of Molecules and Materials, UMR-CNRS 6283, Université du Maine, Avenue O. Messiaen, F-72085 Le Mans (France); Asomoza, R. [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Avenida IPN 2508, San Pedro Zacatenco, D.F. C.P 07360 (Mexico); Chavez-Carvayar, J.A. [Instituto Investigaciones en Materiales-UNAM, Ciudad Universitario, D.F.Mexico (Mexico); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-07-15

Cu(In{sub 1-x}Ga{sub x})Se{sub 2} (CIGS) thin films and their graded (x = 1 to 0) layer were grown on soda lime glass substrates using chemical spray pyrolysis (CSP) at different substrate temperatures (T{sub s}). After optimization of T{sub s}, depositions were carried out at different gallium composition (x) at optimized temperature of 350 °C. All the films deposited at T{sub s} ≥ 350 °C were polycrystalline chalcopyrite structure, with a preferential orientation of (112), including the graded layer. With increase in x, lattice parameters a and c were observed to decrease. Line scan of the CIGS layer showed intersection of gallium and indium concentrations, revealing the graded nature of the film. Composition dependence of Raman peak for CuInSe{sub 2} (CIS) deposited by CSP was analyzed. Optical transmittance at a wavelength of 800 nm of the film with x = 0 (CIS) (30%) was found lower than that of the film grown with x = 0.82 (CIGS) (50%). Cusp-shape of the resistivity was observed with an increase of x leading to steep rise in resistivity of the films (1.61–71.68 Ω-cm) till x = 0.42 and then decreased to 4.78 Ω-cm at x = 0.82. Carrier concentrations of the films were evaluated in the order of 10{sup 16}–10{sup 19} cm{sup −3} with p-type conductivity. These results indicate that graded CIGS thin films with modulated gallium composition can be prepared by CSP. - Graphical abstract: Display Omitted - Highlights: • Optimization of the spray deposition system for device grade chalcopyrite CIGS films. • Optimized substrate temperature to obtain single-phase CIGS by spray deposition. • Detailed report on compositional dependence of CuInSe{sub 2} (CIS) thin films. • Systematic analysis of the influence of Ga in CIS by spray deposition. • Bowing parameter is extracted from the experiment values.
Investigations on electron beam evaporated Cu(In{sub 0.85}Ga{sub 0.15})Se{sub 2} thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Venkatachalam, M.; Kannan, M.D.; Prasanna, S.; Jayakumar, S.; Balasundaraprabhu, R. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore (India); Saroja, M. [Department of Electronics, Erode Arts College, Erode (India)

2009-09-15

CIGS bulk with composition of CuIn{sub 0.85}Ga{sub 0.15}Se{sub 2} was synthesized by direct reaction of elemental copper, indium, gallium and selenium. CIGS thin films were then deposited onto well-cleaned glass substrates using the prepared bulk alloy by electron beam deposition method. The structural properties of the deposited films were studied using X-ray diffraction technique. The as-deposited CIGS films were found to be amorphous. On annealing, the films crystallized with a tetragonal chalcopyrite structure. An intermediate Cu-rich phase precipitated at 200 C and dissociated at higher annealing temperatures. Average grain size calculated from the XRD spectra indicated that the films had a nano-crystalline structure and was further corroborated by AFM analysis of the sample surface. The chemical constituents present in the deposited CIGS films were identified using energy dispersive X-ray analysis. CIGS based solar cells were then fabricated on molybdenum and ITO coated glass substrates and the efficiencies have been evaluated. (author)
Thin film solar cell technology in Germany

International Nuclear Information System (INIS)

Diehl, W.; Sittinger, V.; Szyszka, B.

2005-01-01

Within the scope of limited nonrenewable energy resources and the limited capacity of the ecosystem for greenhouse gases and nuclear waste, sustainability is one important target in the future. Different energy scenarios showed the huge potential for photovoltaics (PV) to solve this energy problem. Nevertheless, in the last decade, PV had an average growth rate of over 20% per year. In 2002, the solar industry delivered more than 500 MWp/year of photovoltaic generators [A. Jaeger-Waldau, A European Roadmap for PV R and D, E-MRS Spring Meeting, (2003)]. More than 85% of the current production involves crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock. On the other hand the so-called second generation thin film solar cells based on a-Si, Cu(In,Ga)(Se,S 2 (CIGS) or CdTe have material thicknesses of a few microns as a result of their direct band gap. Also, the possibility of circuit integration offers an additional cost reduction potential. Especially in Germany, there are a few companies who focus on thin film solar cells. Today, there are two manufacturers with production lines: the Phototronics (PST) division of RWE-Schott Solar with a-Si thin film technology and the former Antec Solar GmbH (now Antec Solar Energy GmbH) featuring the CdTe technology. A pilot line based on CIGS technology is run by Wuerth Solar GmbH. There is also a variety of research activity at other companies, namely, at Shell Solar, Sulfurcell Solartechnik GmbH, Solarion GmbH and the CIS-Solartechnik GmbH. We will give an overview on research activity on various thin film technologies, as well as different manufacturing and production processes in the companies mentioned above. (Author)
Electrochemical behavior of CIGS electrodeposition for applications to photovoltaic cells

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyunju; Ji, Changwook; Kim, Yangdo; Hwang, Yoonhwae [Pusan National University, Busan (Korea, Republic of); Lee, Jaeho [Hongik University, Seoul (Korea, Republic of); Jo, Ilguk [Colorado School of Mines, Golden, CO (United States); Kim, Hyoungchan [Korea Institute of Industrial Technology, Busan (Korea, Republic of)

2014-04-15

The electrodeposition mechanism of Cu(In,Ga)Se{sub 2} (CIGS) thin films on ITO substrates was examined by using cyclic voltammetry (CV). The CV study was performed in unitary In, binary In-Se, ternary Cu-In-Se, and quaternary Cu-In-Ga-Se systems. CV of the Cu-In-Ga-Se system revealed a reduction peak at -0.6 V with the addition of GaCl{sub 3} and showed that the current density was affected significantly by the concentrations of GaCl{sub 3} and InCl{sub 3}. This is probably due to the adsorption-site competition between In{sup 3+} and Ga{sup 3+} on the electrode surface. Energy dispersive X-ray spectroscopy confirmed the CV results. The composition of Ga in the CIGS films increased with increasing concentration of GaCl{sub 3} in the electrolyte whereas the composition of In decreased sharply. The as-deposited films were annealed at 500 .deg. C in a N{sub 2} atmosphere for crystallization. XRD revealed three major peaks corresponding to the (112), (220) and (312) planes of CIGS chalcopyrite respectively. On the other hand, a secondary phase, such as In{sub 4}Se{sub 3}, was observed in the CIGS films containing a high In composition.
Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications

Energy Technology Data Exchange (ETDEWEB)

David M. Dean

2012-10-30

Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.
Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,Ga)Se2

Institute of Scientific and Technical Information of China (English)

Michael Powalla; Stefan Paetel; Dimitrios Hariskos; Roland Wuerz; Friedrich Kessler; Peter Lechner; Wiltraud Wischmann; Theresa Magorian Friedlmeier

2017-01-01

In this article,we discuss the leading thin-film photovoltaic (PV) technology based on the Cu(In,Ga)Se2 (CIGS)compound semiconductor.This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in worldrecord-level conversion efficiency,production,applications,stability,and future developments with respect to a flexible product.Once in large-scale mass production,the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.
Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,GaSe2

Directory of Open Access Journals (Sweden)

Michael Powalla

2017-08-01

Full Text Available In this article, we discuss the leading thin-film photovoltaic (PV technology based on the Cu(In,GaSe2 (CIGS compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.
Effect of sodium addition on Cu-deficient CuIn{sub 1-x}Ga{sub x}S{sub 2} thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Vasekar, Parag S.; Dhere, Neelkanth G. [Florida Solar Energy Center, University of Central Florida, 1679 Clearlake Road, Cocoa, FL 32922 (United States)

2009-01-15

Chalcopyrites are important contenders among solar-cell materials due to direct band gap and very high-absorption coefficients. Copper-indium-gallium disulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of 1.5 eV for terrestrial as well as space applications. At FSEC PV Materials Laboratory, record efficiency of 11.99% has been achieved on a 2.7 {mu}m CIGS2 thin film prepared by sulfurization. There are reports of influence of sodium on copper-indium-gallium selenide (CIGS) as well as copper-indium disulfide (CIS2) solar cells. However, this is the first of its kind approach to study the effect of sodium on CIGS2 solar cells and resulting in encouraging efficiencies. Copper-deficient CIGS2 thin films were prepared with and without the addition of sodium fluoride (NaF). Effects of addition of NaF on the microstructure and device electrical properties are presented in this work. (author)
Comparison of Cu(In, Ga)Se{sub 2} thin films deposited on different preferred oriented Mo back contact by RF sputtering from a quaternary target

Energy Technology Data Exchange (ETDEWEB)

Tian, Jing [Sichuan University, College of Materials Science and Engineering, Chengdu (China); Solar Energy Research Institute, Yunnan Normal University, Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Kunming (China); Peng, Lianqin; Chen, Jinwei; Wang, Gang; Wang, Xueqin; Kang, Hong; Wang, Ruilin [Sichuan University, College of Materials Science and Engineering, Chengdu (China)

2014-09-15

The Cu(In, Ga)Se{sub 2} (CIGS) thin films were deposited on bare glass and DC sputtered preferential oriented Mo-coated glass by RF sputtering from a single quaternary target. The structural and morphological properties of the films were characterized by X-ray diffraction (XRD), Raman spectroscope, energy dispersive X-ray spectrometer (EDS) and atomic force microscope (AFM). Preferred orientation of the Mo back contact was tuned between (110) and (211) plane by controlling the thickness. All the deposited CIGS thin films show (112) preferred oriented chalcopyrite structures. The films prepared on Mo-coated glass show higher quality crystallinity, better stoichiometry composition and more smooth surface morphology. Especially, the film on (211) oriented Mo-coated glass with the best integrated performance is expected to be a candidate absorber for high-efficiency CIGS solar cell device. (orig.)
Rapid quantitative analysis of elemental composition and depth profile of Cu(In,Ga)Se{sub 2} thin solar cell film using laser-induced breakdown spectroscopy

Energy Technology Data Exchange (ETDEWEB)

In, Jung-Hwan; Kim, Chan-Kyu; Lee, Seok-Hee; Choi, Jang-Hee; Jeong, Sungho, E-mail: shjeong@gist.ac.kr

2015-03-31

Laser-induced breakdown spectroscopy (LIBS) is reported as a method for rapid quantitative analysis of elemental composition and depth profile of Cu(In,Ga)Se{sub 2} (CIGS) thin film. A calibration model considering compositional grading over depth was developed and verified with test samples. The results from eight test samples showed that the average concentration of Cu, In, Ga and Se could be predicted with a root mean square error of below 1% and a relative standard deviation of also below 1%. The depth profile of each constituent element of CIGS predicted by LIBS was close to those by Auger electron spectroscopy and secondary ion mass spectrometry. The average ablation depth per pulse during depth profiling was about 100 nm. - Highlights: • LIBS was adopted for quantitative analysis of CIGS thin film. • A calibration model considering compositional grading over depth was developed. • Concentration prediction of CIGS thin film was accurate and precise. • Quantitative depth profiling by LIBS was compared with those by AES and SIMS.
Comparative study of the role of Ga in CIGS solar cells with different thickness

Energy Technology Data Exchange (ETDEWEB)

Han, Anjun, E-mail: haj211@mail.sim.ac.cn [Institute of Photo Electronics Thin Film Devices and Technique of Nankai University, Tianjin 300071 (China); Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), 235 Chengbei Road, Jiading, Shanghai 201800 (China); Sun, Yun; Zhang, Yi [Institute of Photo Electronics Thin Film Devices and Technique of Nankai University, Tianjin 300071 (China); Liu, Xiaohui; Meng, Fanying; Liu, Zhengxin [Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), 235 Chengbei Road, Jiading, Shanghai 201800 (China)

2016-01-01

Cu(In, Ga)Se{sub 2} (CIGS) thin films with thickness of 1 μm and 2 μm are prepared by co-evaporation process, and the different Ga/(Ga + In) are achieved by varying the temperature of Ga source. The morphology, structure, minimum band gap, and performance of solar cells are comparatively studied. As Ga/(Ga + In) increases, little changes can be observed in the crystal quality of 1 μm CIGS films, while the grain size of 2 μm films decreases significantly. (112) diffraction peak intensities of the 1 μm and 2 μm films decrease and increase, respectively. In the case of the same Ga/(Ga + In), the minimum band gap values of 1 μm films are larger than that of 2 μm films, and the difference becomes large with Ga/(Ga + In) increasing. The minimum band gap values of 1 μm films are more sensitive to variation of the Ga/(Ga + In). As Ga/(Ga + In) increases, a more improvement of the efficiency of solar cells with thickness of 1 μm is obtained due to the large enhancement of the open-circuit voltage, and the efficiency reaches the maximum value when Ga/(Ga + In) is about 0.37. - Highlights: • The role of Ga in CIGS solar cells with different thickness is comparatively studied. • Effect of Ga on the material properties of 1 μm and 2 μm films is totally different. • The minimum band gap of thinned films is more sensitive to variation of Ga/(Ga + In). • Efficiency of thinned solar cells increases more significantly with Ga increasing.
Nd:YAG laser annealing investigation of screen-printed CIGS layer on PET: Layer annealing method for photovoltaic cell fabrication process

KAUST Repository

Alsaggaf, Ahmed

2014-06-01

Cu(In, Ga)Se2 (CIGS) ink was formulated from CIGS powder, polyvinyl butyral PVB, terpineol and polyester/polyamine co-polymeric dispersant KD-1. Thin films with different thicknesses were deposited on PET substrate using screen-printing followed by heat treatment using a Nd:YAG laser. The structure and morphology of the heated thin films were studied. The characterization of the CIGS powder, ink, and film was done using TGA, SEM, FIB, EDS, and XRD. TGA analysis shows that the CIGS ink is drying at 200 °C, which is well below the decomposition temperature of the PET substrate. It was observed by SEM that 20 pulses of 532nm and 60 mJ/cm2 Nd:YAG laser annealing causes atomic diffusion on the near surface area. Furthermore, FIB cross section images were utilized to monitor the effect of laser annealing in the depth of the layer. Laser annealing effects were compared to as deposited layer using XRD in reference to CIGS powder. The measurement shows that crystallinity of deposited CIGS is retained while EDS quantification and atomic ratio result in gradual loss of selenium as laser energy increases. The laser parameters were tuned in an effort to utilize laser annealing of screen-printed CIGS layer as a layer annealing method for solar cell fabrication process.
Enhanced electrical properties of pulsed laser-deposited CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films via processing control

Energy Technology Data Exchange (ETDEWEB)

Jo, Yeon Hwa; Mohanty, Bhaskar Chandra; Cho, Yong Soo [Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)

2010-12-15

Polycrystalline CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300 mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65 degto 0.54 deg. Slightly Cu-rich surface with Cu{sub 2-x}Se phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of {proportional_to}10{sup 18} cm{sup -3} and resistivity of 10{sup -1}{omega} cm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu{sub 2-x}Se phase and diffusion of Na from substrates to films. (author)
Electrodeposition route to synthesize cigs films – an economical way ...

African Journals Online (AJOL)

user

Unlike binary conductors CIGS film preparation needs highly ... This argument also holds well in forming a hetero-junction partner CdS ..... successfully electrodeposited onto indium tin oxide substrate and it is recently reported (Li et al., 2010).

Improved growth of solution-deposited thin films on polycrystalline Cu(In,Ga)Se{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), 70565, Stuttgart (Germany); Abou-Ras, Daniel [Helmholtz-Zentrum Berlin fuer Materialien und Energie, 14109, Berlin (Germany)

2016-04-15

CdS and Zn(O,S) grown by chemical bath deposition (CBD) are well established buffer materials for Cu(In,Ga)Se{sub 2} (CIGS) solar cells. As recently reported, a non-contiguous coverage of CBD buffers on CIGS grains with {112} surfaces can be detected, which was explained in terms of low surface energies of the {112} facets, leading to deteriorated wetting of the chemical solution on the CIGS surface. In the present contribution, we report on the effect of air annealing of CIGS thin films prior to the CBD of CdS and Zn(O,S) layers. In contrast to the growth on the as-grown CIGS layers, these buffer lay- ers grow densely on the annealed CIGS layer, even on grains with {112} surfaces. We explain the different growth behavior by increased surface energies of CIGS grains due to the annealing step, i.e., due to oxidation of the CIGS surface. Reference solar cells were processed and completed by i-ZnO/ZnO:Al layers for CdS and by (Zn,Mg)O/ZnO:Al for Zn(O,S) buffers. For solar cells with both, CdS and Zn(O,S) buffers, air-annealed CIGS films with improved buffer coverage resulted in higher power-conversion efficiencies, as compared with the devices containing as-grown CIGS layers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

Science.gov (United States)

Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

2016-02-01

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.
The Effect of Sputtering Parameters on the Film Properties of Molybdenum Back Contact for CIGS Solar Cells

Directory of Open Access Journals (Sweden)

Peng-cheng Huang

2013-01-01

Full Text Available Molybdenum (Mo thin films are widely used as a back contact for CIGS-based solar cells. This paper determines the optimal settings for the sputtering parameters for an Mo thin film prepared on soda lime glass substrates, using direct current (dc magnetron sputtering, with a metal Mo target, in an argon gas environment. A Taguchi method with an L9 orthogonal array, the signal-to-noise ratio, and an analysis of variances is used to determine the performance characteristics of the coating operation. The main sputtering parameters, such as working pressure (mTorr, dc power (W, and substrate temperature (°C, are optimized with respect to the structural features, surface morphology, and electrical properties of the Mo films. An adhesive tape test is performed on each film to determine the adhesion strength of the films. The experimental results show that the working pressure has the dominant effect on electrical resistivity and reflectance. The intensity of the main peak (110 for the Mo film increases and the full width at half maximum decreases gradually as the sputtering power is increased. Additionally, the application of an Mo bilayer demonstrates good adherence and low resistivity.
Monolithic two-terminal hybrid a-Si:H/CIGS tandem cells

NARCIS (Netherlands)

Blanker, J.; Vroon, Z.; Zeman, M.; Smets, A.

2016-01-01

Copper-indium-gallium-di-selenide (CIGS) is the present record holder in lab-scale thin-film photovoltaics (TFPV). One of the problems of this PV technology is the scarcity of indium. Multi-junction solar cells allow better spectral utilization of the light spectrum, while the required current
Fabrication and Characterization of Thin Film Solar Cell Made from CuIn0.75Ga0.25S2 Wurtzite Nanoparticles

Directory of Open Access Journals (Sweden)

Fengyan Zhang

2013-01-01

Full Text Available CuIn0.75Ga0.25S2 (CIGS thin film solar cells have been successfully fabricated using CIGS Wurtzite phase nanoparticles for the first time. The structure of the cell is Glass/Mo/CIGS/CdS/ZnO/ZnO:Al/Ag. The light absorption layer is made from CIGS Wurtzite phase nanoparticles that are formed from single-source precursors through a microwave irradiation. The Wurtzite phase nanoparticles were converted to Chalcopyrite phase film through a single-step annealing process in the presence of argon and sulfur at 450°C. The solar cell made from Wurtzite phase nanoparticles showed 1.6% efficiency and 0.42 fill factor.
Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process

Directory of Open Access Journals (Sweden)

Grace Rajan

2018-01-01

Full Text Available In view of the large-scale utilization of Cu(In,GaSe2 (CIGS solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density.
Growth of polycrystalline Cu(In,Ga)Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

International Nuclear Information System (INIS)

Ishizuka, Shogo; Shibata, Hajime; Yamada, Akimasa; Fons, Paul; Sakurai, Keiichiro; Matsubara, Koji; Niki, Shigeru

2007-01-01

Cu(In,Ga)Se 2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber
Photoluminescence study of high energy proton irradiation on Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Koo, Bonhyeong [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Lee, June Hyuk [Neutron Science Division, Korea Atomic Energy Research Institute (KAERI), 989-111 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Shin, Donghyeop [Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708 (United States); Ahn, Byung Tae, E-mail: btahn@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Shin, Byungha, E-mail: byungha@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2016-03-31

We have studied the effect of proton irradiation on Cu(In,Ga)Se{sub 2} (CIGS) thin films using photoluminescence (PL). We used a 10 MeV proton beam with varying doses from 10{sup 9} to 10{sup 12} cm{sup −2}. Intensity-dependent low temperature PL measurements suggest that the proton irradiation does not create a new defect level but instead changes the number of preexisting defects in the detection range of the PL system. By comparing PL spectra after the proton irradiation with those obtained after thermal annealing under inert gas as well as under hydrogen gas ambient, we find that the irradiation-induced change in the defect structure does not originate from the incorporation of hydrogen but from energetics of the irradiating particles. Electrical resistivity of the proton irradiated CIGS thin films is shown to decrease after the proton irradiation, and this is explained by the reduction of the concentration of compensating donor-like defects, specifically selenium vacancies, based on the PL results. - Highlights: • Photoluminescence study of 10 MeV proton irradiation on CIGS at 10 K. • Irradiation modified population of existing defects without introducing new levels. • Changes in CIGS by 10 MeV irradiation are due to energetics of irradiating protons.
Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

Energy Technology Data Exchange (ETDEWEB)

Anderson, T. J.; Li, S. S.; Crisalle, O. D.; Craciun, V.

2006-09-01

The objectives for this thin-film copper-indium-diselenide (CIS) solar cell project cover the following areas: Develop and characterize buffer layers for CIS-based solar cell; grow and characterize chemical-bath deposition of Znx Cd1-xS buffer layers grown on CIGS absorbers; study effects of buffer-layer processing on CIGS thin films characterized by the dual-beam optical modulation technique; grow epitaxial CuInSe2 at high temperature; study the defect structure of CGS by photoluminescence spectroscopy; investigate deep-level defects in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy; conduct thermodynamic modeling of the isothermal 500 C section of the Cu-In-Se system using a defect model; form alpha-CuInSe2 by rapid thermal processing of a stacked binary compound bilayer; investigate pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells; and conduct device modeling and simulation of CIGS solar cells.
Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

Energy Technology Data Exchange (ETDEWEB)

Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D. [School of Energy Studies, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, S. R., E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-04-13

Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.
Photonic sintering of thin film prepared by dodecylamine capped CuIn{sub x}Ga{sub 1−x}Se{sub 2} nanoparticles for printed photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Singh, Manjeet, E-mail: msitbhu@gmail.com; Jiu, Jinting; Sugahara, Tohru; Suganuma, Katsuaki

2014-08-28

In this paper, we report solution phase large scale synthesis of monodisperse phase pure CuIn{sub x}Ga{sub 1−x}Se{sub 2} (CIGS) nanoparticles by using dodecylamine as solvent and dispersant. Various compositions of CIGS nanoparticles with different Ga content are synthesized by simply adding different amounts of Ga precursors. The band gap of CIGS nanoparticles can be tuned by changing Ga content. Effort is given to understand the formation pathway of CIGS phase so as to make the synthesis easier for the desired product. High intensity pulsed light technique, which provides extreme local heating, is used to sinter the thin film prepared using these nanoparticles on a Mo–glass surface. A uniformly conductive and dense CIGS film can be prepared by adjusting the energy of light and exposure time. The high intensity light irradiation of the CIGS film leads to diffusion of smaller CIGS nanoparticles to form a particle with larger grain size and thus enables sintering of particles without using high temperature processing. - Highlights: • Large scale synthesis of CuIn{sub x}Ga{sub 1−x}Se{sub 2} (CIGS) is reported. • Dodecylamine is used as surfactant and solvent. • CIGS phase formation mechanism is described. • High intensity pulsed light technique is used to sinter the CIGS film.
Preparation and Characterization of Molybdenum Thin Film to Photovoltaic applications; Preparacion y Caracterizacion de Peliculas Delgadas de Molibdeno para Aplicaciones Fotovoltaicas

Energy Technology Data Exchange (ETDEWEB)

Andres, M.; Gutierrez, M. T.

2007-09-18

Molybdenum (Mo) is one of the main material used as back ohmic contact for Cu(In,Ga)Se2 (CIGS) thin film solar cells. It has to provide the electrical properties of low resistivity electrode and high reflectance in the absorbance region of CIGS layer. Also, it has to have high thermal stability, an adequate morphology and good adhesion to the substrate. The aim of this work has been the preparation of Mo layers onto two types of substrates, soda-lime glass (SLG) and a commercial flexible polyimide called Kapton, and the evaluation as a flexible substrate in CIGS solar cells. Internal stress, adhesion, microstructure and optical and electrical properties of Mo thin films have been studied as a function of deposition parameters (gas pressure, power density and time). The change of the substrate from rigid one to flexible introduces tensile stress due to the difference in the coefficient of thermal expansion (CTE) between the coating and the substrate. Low stress in Mo/Kapton structure has been obtained; this is a good result to use in CIGS flexible solar cells. (Author) 23 refs.
Parameters optimization of CIGS solar cell using 2D physical modeling

Science.gov (United States)

Dabbabi, Samar; Nasr, Tarek Ben; Kamoun-Turki, Najoua

In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 μm ZnO:Al, 0.06 μm i-ZnO, 0.04 μm CdS and 3 μm CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 1018 cm-3. The optimized CIGS solar cell characteristics were a current density of short circuit Jsc = 38.75 mA/cm2, an open-circuit voltage V0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency η = 23.20%. This result is in good agreement with experimental efficiencies found in literature.
Cost reduction by using micro-fingers in thin film silicon modules

Energy Technology Data Exchange (ETDEWEB)

Slooff, L.H.; Bosman, J.; Loffler, J.; Budel, T. [ECN Solar Energy, Petten (Netherlands)

2013-06-15

A finite element electrical model is described that can be used to calculate the performance of monolithic thin film photovoltaic modules. The model is suitable for all type of thin film modules, like e.g. p-i-n a-Si:H, CIGS and polymer based modules and it includes losses due to interconnection. Using this model a parameter study is performed for a-Si:H cells with the aim to reduce metal consumption in the cell and interconnection. It is shown that a reduction in metal consumption by a factor 1.3 can be achieved with only marginal loss in performance if short cell are used with very short fingers.
CIGS cells with metallized front contact: Longer cells and higher efficiency

NARCIS (Netherlands)

Deelen, J. van; Frijters, C.

2017-01-01

We have investigated the benefit of a patterned metallization on top of a transparent conductive oxide in CIGS thin-film solar panels. It was found that cells with a grid have a higher efficiency compared to cells with only a TCO. This was observed for all cell lengths used. Furthermore, metallic
Ion beam analysis of Cu(In,Ga)Se{sub 2} thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Karydas, A.G. [International Atomic Energy Agency (IAEA), IAEA Laboratories, Nuclear Science and Instrumentation Laboratory, A-2444 Seibersdorf (Austria); Institute of Nuclear and Particle Physics, NCSR “Demokritos”, 153 10 Aghia Paraskevi, Athens Greece (Greece); Streeck, C. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Radovic, I. Bogdanovic [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Kaufmann, C.; Rissom, T. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Beckhoff, B. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Jaksic, M. [Ruđer Bošković Institute (RBI), Zagreb (Croatia); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E. N. 10, Apartado 21, 2686-953 Sacavém (Portugal)

2015-11-30

Graphical abstract: - Highlights: • Elemental depth profiles for various CIGS thin films were quantitatively determined. • Pure absorbers, complete cell and bilayer solar cells were prepared and analyzed. • Synergistic PIXE and RBS analysis of thin solar cells using alpha beam particles. • High energy alpha beam resolved completely the Indium depth profile. • Synchrotron based Reference Free GIXRF quantitative analysis validated IBA results. - Abstract: The present work investigates the potential of ion beam analysis (IBA) techniques such as the Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) using helium ions to provide quantitative in-depth elemental analysis of various types of Cu(In,Ga)Se{sub 2} thin films. These films with a thickness of about 2 μm are used as absorber layers in photovoltaic devices with continuously increasing the performance of this technology. The preparation process generally aims to obtain an in-depth gradient of In and Ga concentrations that optimizes the optoelectronic and electrical properties of the solar cell. The measurements were performed at directly accessible single or double layered CIGS absorbers and at buried absorbers in completed thin film solar cells. The IBA data were analyzed simultaneously in order to derive best fitted profiles that match all experimental RBS and PIXE spectra. For some samples elemental profiles deduced form synchrotron based, reference free grazing incidence X-ray fluorescence analysis were compared with the IBA results and an overall good agreement was observed within quoted uncertainties.
Thin-Film Photovoltaic Cells: Long-Term Metal(loid) Leaching at Their End-of-Life

NARCIS (Netherlands)

Zimmermann, Y.S.; Schäffer, A.; Corvini, P.F.X.; Lenz, M.

2013-01-01

The photovoltaic effect of thin-film copper indium gallium selenide cells (CIGS) is conferred by the latter elements. Organic photovoltaic cells (OPV), relying on organic light-absorbing molecules, also contain a variety of metals (e.g., Zn, Al, In, Sn, Ag). The environmental impact of such
Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells

International Nuclear Information System (INIS)

Cho, Dae-Hyung; Chung, Yong-Duck; Lee, Kyu-Seok; Park, Nae-Man; Kim, Kyung-Hyun; Choi, Hae-Won; Kim, Jeha

2012-01-01

We have studied the influence of growth temperature (T G ) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T G up to 350 °C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T G . For a T G ≤ 200 °C, a reduction in the series resistance enhanced the solar cell performance, while the p–n interface of the device was found to become deteriorated severely at T G > 200 °C. CIGS solar cells with ITO deposited at T G = 200 °C showed the best performance in terms of efficiency.
Layer-by-Layer Nanoassembly of Copper Indium Gallium Selenium Nanoparticle Films for Solar Cell Applications

Directory of Open Access Journals (Sweden)

A. Hemati

2012-01-01

Full Text Available Thin films of CIGS nanoparticles interdigited with polymers have been fabricated through a cost-effective nonvacuum film deposition process called layer-by-layer (LbL nanoassembly. CIGS nanoparticles synthesized by heating copper chloride, indium chloride, gallium chloride, and selenium in oleylamine were dispersed in water, and desired surface charges were obtained through pH regulation and by coating the particles with polystyrene sulfonate (PSS. Raising the pH of the nanoparticle dispersion reduced the zeta-potential from +61 mV at pH 7 to −51 mV at pH 10.5. Coating the CIGS nanoparticles with PSS (CIGS-PSS produced a stable dispersion in water with −56.9 mV zeta-potential. Thin films of oppositely charged CIGS nanoparticles (CIGS/CIGS, CIGS nanoparticles and PSS (CIGS/PSS, and PSS-coated CIGS nanoparticles and polyethylenimine (CIGS-PSS/PEI were constructed through the LbL nanoassembly. Film thickness and resistivity of each bilayer of the films were measured, and photoelectric properties of the films were studied for solar cell applications. Solar cell devices fabricated with a 219 nm CIGS film, when illuminated by 50 W light-source, produced 0.7 V open circuit voltage and 0.3 mA/cm2 short circuit current density.
Fabrication of Cu(In,Ga)Se2 thin films by a combination of mechanochemical and screen-printing/sintering processes

International Nuclear Information System (INIS)

Wada, T.; Matsuo, Y.; Nomura, S.; Nakamura, Y.; Miyamura, A.; Chiba, Y.; Konagai, M.; Yamada, A.

2006-01-01

We prepared fine Cu(In,Ga)Se 2 (CIGS) powder suitable for screen printing using a mechanochemical process. Particulate precursors were deposited in a thin layer by a screen-printing technique, the remaining organic solvent was removed from the screen-printed CIGS film and finally the porous precursor layer was sintered into a dense polycrystalline film by atmospheric-pressure firing. The crystal structure of the film was analyzed by X-ray diffraction and the microstructure was observed in a SEM. The thickness of the film was 5-10 μm with a grain size of about 2 μm. The films were also observed in a TEM. The grain size of the as-prepared powder was less than 1 μm; however, it enlarged to 2-3 μm after firing at 575 C under a Se ambient. Preliminary CIGS solar cells with our standard Al grid/B-doped ZnO/i-ZnO/ CdS/CIGS/Mo/soda-lime glass structure were fabricated. An efficiency of 2.7%, a V oc of 0.325 V, a J sc of 28.3 mA/cm 2 and a FF of 0.295 was obtained. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

13.7%-efficient Zn(Se,OH){sub x}/Cu(In,Ga)(S,Se){sub 2} thin-film solar cell

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A. [Hahn-Meitner-Institut, Bereich Physikalische Chemie, Berlin (Germany); Blieske, U.; Lux-Steiner, M.Ch. [Hahn-Meitner-Institut, Bereich Festkoerperphysik, Berlin (Germany)

1998-12-01

Cu(In,Ga)Se{sub 2} (CIGS) and related semiconducting compounds have demonstrated their high potential for high-efficiency thin-film solar cells. The highest efficiency for CIGS based thin-film solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as chemical based deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, Zn(Se,OH){sub x} buffer layers were deposited by CBD on polycrystalline Cu(In,Ga)(S,Se){sub 2} (CIGSS). A total-area conversion efficiency of 13.7% was certified by the Fraunhofer Institute for Solar Energy Systems. The CIGSS absorber was fabricated by Siemens Solar Industries (California). For device optimisation, the thickness and good surface coverage were controlled by XPS-UPS photoemission spectroscopy. A Zn(Se,OH){sub x} thickness below 7 nm has been found to be optimum for achieving a homogeneous and compact buffer film on CIGSS, with open-circuit photovoltage V{sub oc} = 535 mV, fill factor FF = 70.76% and a high short-circuit photocurrent density J{sub sc} 36.1 mA cm{sup -2}. (Author)
A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers.

Science.gov (United States)

Xu, Man; Wachters, Arthur J H; van Deelen, Joop; Mourad, Maurice C D; Buskens, Pascal J P

2014-03-10

We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with its layer thickness due to interference effects. Ergo, high precision is required in the CIGS production process, especially when using ultra-thin absorber layers, to accurately realize the required thickness of the ZnO, cadmium sulfide (CdS) and CIGS layer. We show that patterning the ZnO window layer can strongly suppress these interference effects allowing a higher tolerance in the production process.
Review on Alkali Element Doping in Cu(In,Ga)Se2 Thin Films and Solar Cells

DEFF Research Database (Denmark)

Sun, Yun; Lin, Shuping; Li, Wei

2017-01-01

surface structure and electronic property variation induced by alkali fluoride (NaF and KF) post-deposition treatment (PDT), we discuss and interpret the following issues: ① The delamination of CIGS thin films induced by Na incorporation facilitates CuInSe2 formation and inhibits Ga during low...
Parameters optimization of CIGS solar cell using 2D physical modeling

Directory of Open Access Journals (Sweden)

Samar Dabbabi

Full Text Available In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15Â Âµm ZnO:Al, 0.06Â Âµm i-ZnO, 0.04Â Âµm CdS and 3Â Âµm CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 1018Â cmâ3. The optimized CIGS solar cell characteristics were a current density of short circuit JscÂ =Â 38.75Â mA/cm2, an open-circuit voltage V0CÂ =Â 804.03Â mV, a fill factor FFÂ =Â 74.48% and an efficiency Î·Â =Â 23.20%. This result is in good agreement with experimental efficiencies found in literature. Keywords: CIGS solar cell, Electrical characteristics, Silvaco-Atlas software
Real time spectroscopic ellipsometry for analysis and control of thin film polycrystalline semiconductor deposition in photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Koirala, Prakash; Attygalle, Dinesh; Aryal, Puruswottam; Pradhan, Puja; Chen, Jie [Center for Photovoltaics Innovation and Commercialization and Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606 (United States); Marsillac, Sylvain [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Ferlauto, Andre S.; Podraza, Nikolas J.; Collins, Robert W. [Center for Photovoltaics Innovation and Commercialization and Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606 (United States)

2014-11-28

Real time spectroscopic ellipsometry (RTSE) from the near-infrared to ultraviolet has been applied for analysis of the deposition of polycrystalline thin films that form the basis of two key photovoltaic heterojunction configurations, superstrate SnO{sub 2}/CdS/CdTe and substrate Mo/Cu(In{sub 1−x}Ga{sub x})Se{sub 2}/CdS. The focus of this work is to develop capabilities for monitoring and controlling the key steps in the fabrication of these device structures. Analysis of RTSE data collected during sputter deposition of CdS on a rough SnO{sub 2} transparent top contact provides the time evolution of the CdS effective thickness, or film volume per unit substrate area. This thickness includes interface, bulk, and surface roughness layer components and affects the CdS/CdTe heterojunction performance and the quantum efficiency of the solar cell in the blue region of the solar spectrum. Similarly, analysis of RTSE data collected during co-evaporation of Cu(In{sub 1−x}Ga{sub x})Se{sub 2} (CIGS; x ∼ 0.3) on a rough Mo back contact provides the evolution of a second phase of Cu{sub 2−x}Se within the CIGS layer. During the last stage of CIGS deposition, the In, Ga, and Se co-evaporants convert this Cu{sub 2−x}Se phase to CIGS, and RTSE identifies the endpoint, specifically the time at which complete conversion occurs and single-phase, large-grain CIGS is obtained in this key stage. - Highlights: • Real time spectroscopic ellipsometry (RTSE) study of CdS and CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) films. • RTSE during CdS deposition provides the evolution of the CdS effective thickness. • RTSE for CIGS film enables to measure and control the composition and thickness. • The work leads to the development of optical models for processing steps.
Photovoltaic Manufacturing Cost and Throughput Improvements for Thin Film CIGS-Based Modules: Final Technical Report, July 1998 -- September 2001

Energy Technology Data Exchange (ETDEWEB)

Britt, J.

2002-04-01

This report describes the marked improvements made of the production line under the PVMaT program: successfully developed a high-speed, all-laser, monolithic integration process for CIGS-based modules on polyimide substrates; exceeded PVMaT goals for scribing rate and total interconnect width; developed robust, well-controlled techniques for selective scribing; improved CIGS evaporation sources to allow uniform, controllable delivery; completed foundation required to integrate higher CIGS deposition rates into the production line; developed well-controlled Se delivery system to minimize Se consumption; successfully integrated the parallel-detector spectroscope ellipsometer (PDSE) into a production CIGS deposition chamber; collected useful, in-situ data with PDSE; validated the performance of the X-ray fluorescometry (XRF) sensor in the production CIGS deposition chamber; and successfully incorporated the XRF sensor into the control architecture of the production CIGS deposition chamber .
Development of Enhanced Window layers for CIGS Photovoltaic Devices

Science.gov (United States)

Alexander, J. Nicholas

One of the most promising thin film devices right now is the Copper Indium Gallium Selenide (CIGS) solar cell with maximum reported power conversion efficiency of 22.3%. The Transparent Conducting Oxide (TCO) which is the top layer of the CIGS device also known as the window layer, is responsible for collecting the electrons generated in the CIGS device and conducting them to the circuit. Development of a very low resistivity film with a high optical transmission is crucial for optimal performance of devices as well as the ability to be deployed without changes to their properties for several decades. Current TCOs such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) are met with limitations with either using large amounts of expensive materials such as indium, often requiring and anneal step to obtain good conductivity, or have shown poor long term reliability. This thesis is focused on development of InZnO and zirconium doped InZnO as a potential replacement TCO to obtain high conductivity and high transmission like the leading TCOs without needing heated depositions, post deposition annealing, and maintain a good film reliability. Zirconium doping was employed to farther enhance both the optical and electrical properties through enhancement of the films high frequency permittivity of InZnO while providing improved reliability to the film. The films were grown through a mix of DC and RF co-sputtering. InZnO films were deposited at varying indium concentration ( 10-30%) and samples were able to achieve low resistivity ( 7x10-4 O-cm), high mobility (>30 cm2/v.s), high carrier concentration (>10 20 cm-3), while maintaining high transmission (> 80%) in the visible and near-infrared region. After zirconium was incorporated into the InZnO films by replacement of the ZnO target with a ZrO2/ZnO (5:95) target, films of Zr:InZnO were deposit through the same method to achieve films that maintained very similar electrical and optical properties. The little
Application of a substrate bias to control the droplet density on Cu(In,Ga)Se{sub 2} thin films grown by Pulsed Electron Deposition

Energy Technology Data Exchange (ETDEWEB)

Rampino, S. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Pattini, F., E-mail: rampino@imem.cnr.it [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Malagù, C.; Pozzetti, L. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1-44122 Ferrara (Italy); Stefancich, M. [LENS Laboratory, Masdar Institute of Science and Technology, Masdar City, PO Box 54224, Abu Dhabi (United Arab Emirates); Bronzoni, M. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy)

2014-07-01

One of the main shortcomings in the fabrication of thin-film solar cells by pulsed high-energy deposition techniques (i.e. Pulsed Laser Deposition or Pulsed Electron Deposition — PED), is the presence of a significant number of particulates on the film surface. This affects the morphological properties of the cell active layers and, ultimately, the performance of the final device. To reduce the density of these defects, we deposited a Cu(In,Ga)Se{sub 2} (CIGS) thin film by PED and studied the effect on the film morphology when a DC bias was applied between the substrate and the target. Our results show that a negative substrate voltage, comprised between 0 and − 300 V, can not only reduce the droplet density on the CIGS film surface of about one order of magnitude with respect to the standard unbiased case (from 6 × 10{sup 5} to 5 × 10{sup 4} cm{sup −2}), but also lower the maximum particulate size and the surface smoothness. When a positive voltage is applied, we observed that a significant increase in the droplet surface density (up to 10{sup 8} cm{sup −2}) occurs. The abrupt change in the preferred crystal orientation (switching from (112) to (220)/(204) by applying negative and positive biases, respectively) is also a direct consequence of the applied DC voltage. These results confirm that the external DC bias could be used as an additional parameter to control the physical properties of thin films grown by PED. - Highlights: • Cu(In,Ga)Se{sub 2} (CIGS) films were grown by Pulsed Electron Deposition (PED). • Positive and negative DC biases were applied between the target and the substrate. • The droplet density can be reduced by one order of magnitude by DC negative bias. • Chemical composition and grain orientation of CIGS are influenced by the DC bias. • The DC bias can be an additional parameter of PED for controlling the film properties.
Deep absorption band in Cu(In,Ga)Se{sub 2} thin films and solar cells observed by transparent piezoelectric photothermal spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Shirakata, Sho; Atarashi, Akiko [Faculty of Engineering, Ehime University, Matsuyama 790-8577 (Japan); Yagi, Masakazu [Kagawa National College of Technology, Mitoyo-shi 769-1192 (Japan)

2015-06-15

The photo-acoustic spectroscopy (PAS) using a transparent piezoelectric photo-thermal (Tr-PPT) method was carried out on Cu(In,Ga)Se{sub 2} (CIGS) thin films (both CIGS/Mo/SLG and CdS/CIGS/Mo/SLG) and solar cells (ZnO/CdS/CIGS/Mo/SLG). Using the Tr-PPT method, the high background absorption in the below gap region observed in both a microphone and a conventional transducer PAS spectra was strongly reduced. This high background absorption came from the CIGS/Mo interface. This result proves that the Tr-PPT PAS is the surface sensitive method. In the below-band region, a bell-shape deep absorption band has been observed at 0.76 eV, in which a full-width at the half-maximum value was 70-120 meV. This deep absorption band was observed for both CdS/CIGS/Mo/SLG and ZnO/CdS/CIGS/Mo/SLG structures. The peak energy of the absorption band was independent of the alloy composition for 0.25≤Ga/III≤0.58. Intensity of the PA signal was negatively correlated to the Na concentration at the CIGS film surface. The origin of the 0.76 eV peak is discussed with relation to native defects such as a Cu-vacancy-related defect (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

Science.gov (United States)

Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

2002-01-01

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.
Characterization of high quality Cu(In,Ga)Se{sub 2} thin films prepared by rf-magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Bouchama, Idris [Departement d' Electronique, Faculte de Technologie, Universite de Msila (Algeria); Djessas, Kamal [Laboratoire Procedes Materiaux et Energie Solaire, PROMES-CNRS, Rambla de la Thermodynamique, Technosud, 66100 Perpignan (France); Bouloufa, Abdeslam [Laboratoire d' Electrochimie et Materiaux, Universite Ferhat Abbas de Setif (Algeria); Gauffier, Jean-Luc [Departement de Physique, INSA de Toulouse, 135, Avenue de Rangueil, 31077 Toulouse Cedex 4 (France)

2013-01-15

This paper reports the production of high quality polycrystalline thin layers of CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} (CIGS), using rf-magnetron sputtering, from a powder target. These films are designed to be used as absorbers in solar cells. The depositions were carried out at substrate temperatures below 250 C and glass substrates was used. The influence of the substrate temperatures on the crystalline quality as well as structural, optical and electrical properties of thin layers obtained has been studied. X-ray diffraction showed that the films were highly orientated in the (112) and/or (204)/(220) direction. In{sub 2}Se{sub 3} secondary phase was observed on the samples grown at lower substrate temperatures. The surface morphology of CIGS layers studied by Atomic Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM) has been also discussed. The most surprising and exciting outcome of this study was that the as grown films were of near stoichiometric composition. Resistivity measurements were carried out using the four point probe method. The optical absorption showed that energy gap values are between 1.13 and 1.18 eV and rather sharp absorption fronts. Thin film resistivities are between 10.7 and 60.9 {Omega}.cm depending on the experimental growth conditions (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Single source precursors for fabrication of I-III-VI{sub 2} thin-film solar cells via spray CVD

Energy Technology Data Exchange (ETDEWEB)

Hollingsworth, J.A.; Banger, K.K.; Jin, M.H.-C.; Harris, J.D.; Cowen, J.E.; Bohannan, E.W.; Switzer, J.A.; Buhro, W.E.; Hepp, A.F

2003-05-01

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors can be used in either a hot, or cold-wall spray chemical vapour deposition reactor, for depositing CuInS{sub 2}, CuGaS{sub 2} and CuGaInS{sub 2} at reduced temperatures (400-450 sign C), which display good electrical and optical properties suitable for photovoltaic devices. X-ray diffraction studies, energy dispersive spectroscopy and scanning electron microscopy confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.
Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

Directory of Open Access Journals (Sweden)

Md. Billal Hosen

2017-10-01

Full Text Available This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have been described. The schematic diagram of photovoltaic solar cell has been depicted. Moreover, the most important performance measurement graph, J-V characteristic curve, resulting from CIGS solar cell simulation has been analyzed to estimate the optimum values of fill factor and cell efficiency. These optimum results have been obtained from the open circuit voltage, short circuit current density, and the maximum points of voltage and current density generated from the cell.
Crystalline ordered states of CuIn1−xGaxSe2 (x = 0, 0.3, and 1.0) thin-films on different substrates investigated by Raman scattering spectroscopy

International Nuclear Information System (INIS)

Jeong, A.R.; Jo, W.; Song, M.; Yoon, S.

2012-01-01

Structural properties of Cu(In,Ga)Se 2 absorber layers have been examined for photovoltaic applications. Thin-films with three different chemical compositions, CuInSe 2 (CIS), Cu(In,Ga)Se 2 (CIGS) and CuGaSe 2 (CGS), were grown by co-evaporation on two kinds of substrates: Mo-coated soda-lime glass and bare soda-lime glass. Intriguing morphology and grain-growth behaviors were found in the surface of the films. X-ray diffraction of the films exhibited phase formation of the stoichiometric chalcopyrite phase of the materials while signs of secondary phases like Cu 2 Se and Cu–Se 2 were also observed. The optical transmittance of the films was measured to obtain their optical bandgaps, which were well matched with the bulk values of CIS, CIGS, and CGS, which are 1.1, 1.4, and 1.7 eV, respectively. Using Raman scattering spectroscopy, the A 1 mode was observed to shift from 177 cm −1 for CIS to 189 cm −1 for CGS as the Ga content increased. The films on Mo substrates are likely to have secondary phases, which is not the case for soda-lime glass. An indication of the formation of the CuAu structure is obtained from the CIS thin-films. - Highlights: ► We report structural and optical properties of CIGS films on different substrates. ► Various optical tools were used to characterize the CIGS films. ► Crystalline ordered states were examined by A1 mode of Raman spectra.
Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

Directory of Open Access Journals (Sweden)

Hongxia Wang

2011-01-01

Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.
A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

International Nuclear Information System (INIS)

Park, Se Jin; Moon, Sung Hwan; Min, Byoung Koun; Cho, Yunae; Kim, Ji Eun; Kim, Dong-Wook; Lee, Doh-Kwon; Gwak, Jihye; Kim, Jihyun

2014-01-01

Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(In x Ga 1−x )S 2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(In x Ga 1−x )(S 1−y Se y ) 2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm −2 . The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films. (paper)
Se interlayer in CIGS absorption layer for solar cell devices

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung-Kyu; Sim, Jae-Kwan [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of); Kissinger, N.J. Suthan [Department of General Studies, Physics Group, Jubail University College, Royal Commission for Jubail, Jubail 10074 (Saudi Arabia); Song, Il-Seok; Kim, Jin-Soo; Baek, Byung-Joon [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of); Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of)

2015-06-05

Highlights: • Se interlayer is deposited between the CuGa and CuIn/In/Mo/STS stacked layer. • Both CIG precursor layers were selenized at 500 °C for 1 h. • SIMS depth profile shows that Ga distribution is uniform by Se interlayer. • The efficiency was improved for the CIGS solar cell by Se interlayer. - Abstract: A CIGS absorber layer with high gallium contents in the space-charge region can reduce the carrier recombination and improve the open circuit voltage V{sub oc}. Therefore, controlling Ga grading on top of CIGS thin film solar cells is the main objective of this experiment. To reduce Selenium (Se) vacancy, it is important that the diffusion of Ga elements into Se vacancy between Mo back contact and CIGS absorption layer would be controlled. In order to reduce Se vacancy and confirm Ga inter-diffusion, two CIGS solar cells were fabricated by converting CIG precursor with and without Se interlayer. The copper-indium metallic precursors were fabricated corresponding to the sequence CuIn/In/Mo/STS on stainless steel (STS) substrates by sequential direct current magnetron sputtering while Se layer was evaporated by rapid thermal annealing (RTA) system to obtain a Se/CuIn/In/Mo/STS stack. CuGa precursor layer was also fabricated on the Se/CuIn/In/Mo/STS stack. Finally, both CuGa/Se/CuIn/In/Mo/STS and CuGa/CuIn/In/Mo/STS stacks were selenized at 500 °C for 1 h. It was clearly observed from the secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD) that there was a change between the fabricated CIGS absorption layers and the amount of Ga elements. Furthermore, the Ga elements gradually decreased from the top to the bottom layer of the CIGS absorption layer. We also discussed the effect of Se interlayer in the CIGS absorption layer and its influence on the solar cell’s performance.
Se interlayer in CIGS absorption layer for solar cell devices

International Nuclear Information System (INIS)

Lee, Seung-Kyu; Sim, Jae-Kwan; Kissinger, N.J. Suthan; Song, Il-Seok; Kim, Jin-Soo; Baek, Byung-Joon; Lee, Cheul-Ro

2015-01-01

Highlights: • Se interlayer is deposited between the CuGa and CuIn/In/Mo/STS stacked layer. • Both CIG precursor layers were selenized at 500 °C for 1 h. • SIMS depth profile shows that Ga distribution is uniform by Se interlayer. • The efficiency was improved for the CIGS solar cell by Se interlayer. - Abstract: A CIGS absorber layer with high gallium contents in the space-charge region can reduce the carrier recombination and improve the open circuit voltage V oc . Therefore, controlling Ga grading on top of CIGS thin film solar cells is the main objective of this experiment. To reduce Selenium (Se) vacancy, it is important that the diffusion of Ga elements into Se vacancy between Mo back contact and CIGS absorption layer would be controlled. In order to reduce Se vacancy and confirm Ga inter-diffusion, two CIGS solar cells were fabricated by converting CIG precursor with and without Se interlayer. The copper-indium metallic precursors were fabricated corresponding to the sequence CuIn/In/Mo/STS on stainless steel (STS) substrates by sequential direct current magnetron sputtering while Se layer was evaporated by rapid thermal annealing (RTA) system to obtain a Se/CuIn/In/Mo/STS stack. CuGa precursor layer was also fabricated on the Se/CuIn/In/Mo/STS stack. Finally, both CuGa/Se/CuIn/In/Mo/STS and CuGa/CuIn/In/Mo/STS stacks were selenized at 500 °C for 1 h. It was clearly observed from the secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD) that there was a change between the fabricated CIGS absorption layers and the amount of Ga elements. Furthermore, the Ga elements gradually decreased from the top to the bottom layer of the CIGS absorption layer. We also discussed the effect of Se interlayer in the CIGS absorption layer and its influence on the solar cell’s performance
Influence of laser wavelength on the laser induced breakdown spectroscopy measurement of thin CuIn1−xGaxSe2 solar cell films

International Nuclear Information System (INIS)

Kim, Chan Kyu; In, Jung Hwan; Lee, Seok Hee; Jeong, Sungho

2013-01-01

Laser induced breakdown spectroscopy (LIBS) measurement of thin CuIn x Ga 1−x Se 2 (CIGS) films (1.2–1.9 μm) with varying Ga to In ratios was carried out using the fundamental (1064 nm) and second harmonic (532 nm) wavelength Nd:YAG lasers (τ = 5 ns, spot diameter = 150 μm, top-hat profile) in air. The concentration ratios of Ga to In, x Ga ≡ Ga/(Ga + In), of the CIGS samples ranged from 0.027 to 0.74 for which the band gap varied nearly proportionally to x Ga from 0.96 to 1.42. It was found that the LIBS signal of 1064 nm (1.17 eV) wavelength laser was significantly influenced by x Ga , whereas that of the 532 nm (2.34 eV) laser was consistent for all values of x Ga . The observed dependency of the LIBS signal intensity on the laser wavelength was attributed to the large difference of photon energy of the two wavelengths that changed the absorption of incident laser energy by the film. The 532 nm wavelength was found to be advantageous for multi-shot analysis that enabled depth profile analysis of the thin CIGS films and for improving measurement precision by averaging the multi-shot LIBS spectra. - Highlights: • The ablation characteristics of CIGS solar cell films change drastically with laser wavelength. • The LIBS signal intensity of 1064 nm wavelength laser depends strongly on Ga concentration. • Multi-shot LIBS analysis using a 532 nm laser is more advantageous for accuracy and consistency
Thin-film photovoltaic power generation offers decreasing greenhouse gas emissions and increasing environmental co-benefits in the long term.

Science.gov (United States)

Bergesen, Joseph D; Heath, Garvin A; Gibon, Thomas; Suh, Sangwon

2014-08-19

Thin-film photovoltaic (PV) technologies have improved significantly recently, and similar improvements are projected into the future, warranting reevaluation of the environmental implications of PV to update and inform policy decisions. By conducting a hybrid life cycle assessment using the most recent manufacturing data and technology roadmaps, we compare present and projected environmental, human health, and natural resource implications of electricity generated from two common thin-film PV technologies-copper indium gallium selenide (CIGS) and cadmium telluride (CdTe)-in the United States (U.S.) to those of the current U.S. electricity mix. We evaluate how the impacts of thin films can be reduced by likely cost-reducing technological changes: (1) module efficiency increases, (2) module dematerialization, (3) changes in upstream energy and materials production, and (4) end-of-life recycling of balance of system (BOS). Results show comparable environmental and resource impacts for CdTe and CIGS. Compared to the U.S. electricity mix in 2010, both perform at least 90% better in 7 of 12 and at least 50% better in 3 of 12 impact categories, with comparable land use, and increased metal depletion unless BOS recycling is ensured. Technological changes, particularly efficiency increases, contribute to 35-80% reductions in all impacts by 2030.

Plasma-assisted self-formation of nanotip arrays on the surface of Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Zimin, Sergey P.; Mokrov, Dmitry A. [Yaroslavl State University (Russian Federation); Gorlachev, Egor S.; Amirov, Ildar I.; Naumov, Viktor V. [Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl (Russian Federation); Gremenok, Valery F. [Scientific-Practical Materials Research Center, NAS of Belarus, Minsk (Belarus); Bente, Klaus [Applied Mineralogy, University Tuebingen (Germany); Kim, Woo Y. [Fusion Research Center, Hoseo University, Asan-City (Korea, Republic of)

2017-06-15

In this paper, we report on the phenomenon of nanostructure self-formation on the surface of Cu(In,Ga)Se{sub 2} (CIGS) thin films during inductively coupled argon plasma treatment with its duration varied from 10 to 120 s. The initial films were grown on glass substrates using the selenization technique. During the CIGS film surface treatment in the high-density low-pressure radio-frequency inductively coupled argon plasma there took place a formation of arrays of uniform vertical nanostructures, which shape with increasing processing duration changed from nanocones to nanorods and back to nanocones. A model of the nanotip plasma-assisted self-formation associated with the implementation of micromasking and vapor-liquid-solid mechanisms involving metallic In-Ga (In-Ga-Cu) liquid alloy droplets is proposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
High-throughput combinatorial chemical bath deposition: The case of doping Cu (In, Ga) Se film with antimony

Science.gov (United States)

Yan, Zongkai; Zhang, Xiaokun; Li, Guang; Cui, Yuxing; Jiang, Zhaolian; Liu, Wen; Peng, Zhi; Xiang, Yong

2018-01-01

The conventional methods for designing and preparing thin film based on wet process remain a challenge due to disadvantages such as time-consuming and ineffective, which hinders the development of novel materials. Herein, we present a high-throughput combinatorial technique for continuous thin film preparation relied on chemical bath deposition (CBD). The method is ideally used to prepare high-throughput combinatorial material library with low decomposition temperatures and high water- or oxygen-sensitivity at relatively high-temperature. To check this system, a Cu(In, Ga)Se (CIGS) thin films library doped with 0-19.04 at.% of antimony (Sb) was taken as an example to evaluate the regulation of varying Sb doping concentration on the grain growth, structure, morphology and electrical properties of CIGS thin film systemically. Combined with the Energy Dispersive Spectrometer (EDS), X-ray Photoelectron Spectroscopy (XPS), automated X-ray Diffraction (XRD) for rapid screening and Localized Electrochemical Impedance Spectroscopy (LEIS), it was confirmed that this combinatorial high-throughput system could be used to identify the composition with the optimal grain orientation growth, microstructure and electrical properties systematically, through accurately monitoring the doping content and material composition. According to the characterization results, a Sb2Se3 quasi-liquid phase promoted CIGS film-growth model has been put forward. In addition to CIGS thin film reported here, the combinatorial CBD also could be applied to the high-throughput screening of other sulfide thin film material systems.
Optical Metrology for CIGS Solar Cell Manufacturing and its Cost Implications

Science.gov (United States)

Sunkoju, Sravan Kumar

Solar energy is a promising source of renewable energy which can meet the demand for clean energy in near future with advances in research in the field of photovoltaics and cost reduction by commercialization. Availability of a non-contact, in-line, real time robust process control strategies can greatly aid in reducing the gap between cell and module efficiencies, thereby leading to cost-effective large-scale manufacturing of high efficiency CIGS solar cells. In order to achieve proper process monitoring and control for the deposition of the functional layers of CuIn1-xGaxSe 2 (CIGS) based thin film solar cell, optical techniques such as spectroscopic reflectometry and polarimetry are advantageous because they can be set up in an unobtrusive manner in the manufacturing line, and collect data in-line and in-situ. The use of these techniques requires accurate optical models that correctly represent the properties of the layers being deposited. In this study, Spectroscopic ellipsometry (SE) has been applied for the characterization of each individual stage of CIGS layers deposited using the 3-stage co-evaporation process along with the other functional layers. Dielectric functions have been determined for the energy range from 0.7 eV to 5.1 eV. Critical-point line-shape analysis was used in this study to determine the critical point energies of the CIGS based layers. To control the compositional and thickness uniformity of all the functional layers during the fabrication of CIGS solar cells over large areas, multilayer photovoltaics (PV) stack optical models were developed with the help of extracted dielectric functions. In this study, mapping capability of RC2 spectroscopic ellipsometer was used to map all the functional layer thicknesses of a CIGS solar cell in order to probe the spatial non-uniformities that can affect the performance of a cell. The optical functions for each of the stages of CIGS 3-stage deposition process along with buffer layer and transparent
Improvements in CdTe- and CIGS-based thin-film solar cells and investigation on new materials for photovoltaic applications.

OpenAIRE

Rosa, Greta

2018-01-01

Currently, thin-film solar cells are one of the most promising technologies for low-cost renewable energy production. CdTe- and CuInGaSe2-based cells, which achieved record efficiencies of 22.1% and 22.6% respectively, are the most attractive among thin-film solar cells. These high efficiencies have had a huge influence in making them highly competitive in the photovoltaic market, with an estimated final cost per module lower than US $ 0.50 per peak-watt. At the Thin Film Laboratory of the...
Influence of annealing temperature on properties of Cu(In,Ga)(Se,S){sub 2} thin films prepared by co-sputtering from quaternary alloy and In{sub 2}S{sub 3} targets

Energy Technology Data Exchange (ETDEWEB)

Lin, Y.C., E-mail: ielinyc@cc.ncue.edu.t [Department of Mechatronics Engineering, National Changhua University of Education, No. 2, Shida Road, Changhua 50074, Taiwan (China); Yen, W.T.; Chen, Y.L.; Wang, L.Q. [Department of Mechatronics Engineering, National Changhua University of Education, No. 2, Shida Road, Changhua 50074, Taiwan (China); Jih, F.W. [Chung-Shan Institute of Science and Technology, No. 15, Shi Qi Zi, Gaoping village, Longtan Township, Taoyuan County, Taiwan (China)

2011-02-15

Pentanary Cu(In,Ga)(Se,S){sub 2} (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In{sub 2}S{sub 3} targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86x10{sup 16} cm{sup -3} and 32 {Omega} cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe{sub 2}, CuGaSe{sub 2}, and CuInS{sub 2}. This may be because the vibration frequencies of In-Se, In-S bonds are similar to the Ga-Se and Ga-S bonds, causing their absorption bands overlap. -- Research Highlights: {yields} We report a chalcopyrite Cu(In,Ga)(Se,S){sub 2} (CIGSS) thin films on soda lime glass substrate by co-sputtering quaternary single-phase chalcopyrite CIGS alloy, and In{sub 2}S{sub 3} targets. {yields} By incorporating sulfur into partly selenized CIGS films, researchers fabricated a chalcopyrite CIGSS layer with double-graded band-gap structure. {yields} The CIGS quaternary target and Raman spectra were analyzed for investigating the CIGSS structure and quality.
Recycling of high purity selenium from CIGS solar cell waste materials

Energy Technology Data Exchange (ETDEWEB)

Gustafsson, Anna M.K., E-mail: anna.gustafsson@chalmers.se; Foreman, Mark R.StJ.; Ekberg, Christian

2014-10-15

Highlights: • A new method for recycling of selenium from CIGS solar cell materials is presented. • Separation of selenium as selenium dioxide after heating in oxygen atmosphere. • Complete selenium separation after oxidation of <63 μm particles at 800 °C for 1 h. • After reduction of selenium dioxide the selenium purity was higher than 99.999 wt%. - Abstract: Copper indium gallium diselenide (CIGS) is a promising material in thin film solar cell production. To make CIGS solar cells more competitive, both economically and environmentally, in comparison to other energy sources, methods for recycling are needed. In addition to the generally high price of the material, significant amounts of the metals are lost in the manufacturing process. The feasibility of recycling selenium from CIGS through oxidation at elevated temperatures was therefore examined. During oxidation gaseous selenium dioxide was formed and could be separated from the other elements, which remained in solid state. Upon cooling, the selenium dioxide sublimes and can be collected as crystals. After oxidation for 1 h at 800 °C all of the selenium was separated from the CIGS material. Two different reduction methods for reduction of the selenium dioxide to selenium were tested. In the first reduction method an organic molecule was used as the reducing agent in a Riley reaction. In the second reduction method sulphur dioxide gas was used. Both methods resulted in high purity selenium. This proves that the studied selenium separation method could be the first step in a recycling process aimed at the complete separation and recovery of high purity elements from CIGS.
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

Energy Technology Data Exchange (ETDEWEB)

Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

2017-08-01

Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.
Optical characteristics of thin CIGS cells on TCO back contact

NARCIS (Netherlands)

Deelen, J. van; Kniknie, B.; Vroon, Z.A.E.P.; Wuerz, R.; Kessler, F.

2014-01-01

Reduction of CIGS layer thickness could translate in significant cost reduction. CIGS was made on transparent conductive oxide (TCO) to allow for optical characterization. This data was compared with external quantum efficiency (EQE) data. The results suggest that changes in surface morphology are
Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells.

Science.gov (United States)

Chirilă, Adrian; Reinhard, Patrick; Pianezzi, Fabian; Bloesch, Patrick; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Keller, Debora; Gretener, Christina; Hagendorfer, Harald; Jaeger, Dominik; Erni, Rolf; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N

2013-12-01

Thin-film photovoltaic devices based on chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber layers show excellent light-to-power conversion efficiencies exceeding 20%. This high performance level requires a small amount of alkaline metals incorporated into the CIGS layer, naturally provided by soda lime glass substrates used for processing of champion devices. The use of flexible substrates requires distinct incorporation of the alkaline metals, and so far mainly Na was believed to be the most favourable element, whereas other alkaline metals have resulted in significantly inferior device performance. Here we present a new sequential post-deposition treatment of the CIGS layer with sodium and potassium fluoride that enables fabrication of flexible photovoltaic devices with a remarkable conversion efficiency due to modified interface properties and mitigation of optical losses in the CdS buffer layer. The described treatment leads to a significant depletion of Cu and Ga concentrations in the CIGS near-surface region and enables a significant thickness reduction of the CdS buffer layer without the commonly observed losses in photovoltaic parameters. Ion exchange processes, well known in other research areas, are proposed as underlying mechanisms responsible for the changes in chemical composition of the deposited CIGS layer and interface properties of the heterojunction.
Multi-Material Front Contact for 19% Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Joop van Deelen

2016-02-01

Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.
Application of femtosecond laser ablation inductively coupled plasma mass spectrometry for quantitative analysis of thin Cu(In,Ga)Se{sub 2} solar cell films

Energy Technology Data Exchange (ETDEWEB)

Lee, Seokhee [School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of); Gonzalez, Jhanis J. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Yoo, Jong H. [Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Chirinos, Jose R. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Facultad de Ciencias, Universidad Central de Venezuela, Caracas 1041A (Venezuela, Bolivarian Republic of); Russo, Richard E. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Applied Spectra Inc., 46665 Fremont Boulevard, Fremont, CA 94538 (United States); Jeong, Sungho, E-mail: shjeong@gist.ac.kr [School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of)

2015-02-27

This work reports that the composition of Cu(In,Ga)Se{sub 2} (CIGS) thin solar cell films can be quantitatively predicted with high accuracy and precision by femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs-LA-ICP-MS). It is demonstrated that the results are strongly influenced by sampling conditions during fs-laser beam (λ = 1030 nm, τ = 450 fs) scanning on the CIGS surface. The fs-LA-ICP-MS signals measured at optimal sampling conditions generally provide a straight line calibration with respect to the reference concentrations measured by inductively coupled plasma optical emission spectroscopy (ICP-OES). The concentration ratios predicted by fs-LA-ICP-MS showed high accuracy, to 95–97% of the values measured with ICP-OES, for Cu, In, Ga, and Se elements. - Highlights: • Laser ablation inductively coupled plasma mass spectrometry of thin film is reported. • Concentration ratio prediction with a confidence level of 95–97% is achieved. • Quantitative determination of composition is demonstrated.
Surface microstructure evolution of highly transparent and conductive Al-doped ZnO thin films and its application in CIGS solar cells

Science.gov (United States)

Cheng, Ke; Liu, Jingjing; Jin, Ranran; Liu, Jingling; Liu, Xinsheng; Lu, Zhangbo; Liu, Ya; Liu, Xiaolan; Du, Zuliang

2017-07-01

Aluminum-doped zinc oxide (AZO) has attained intensive attention as being a very good transparent conducting oxide for photovoltaic applications. In this work, AZO films have been deposited on glass substrate by radio frequency (RF) magnetron sputtering. The influences of substrate temperatures on morphological, structural, optical and electrical properties of AZO films were systematically investigated. The results indicate that all AZO films have the hexagonal structure with c-axis preferred orientation. Morphological and electrical measurements have revealed that the substrate temperatures have strong influence on the microstructure, optical and electrical properties of AZO films. The AZO film is highly transparent from ultraviolet up to near infrared range with highest average transparency exceeding 83%. The minimum resistivity is as low as 6.1 × 10-4 Ω cm. The carrier concentration and mobility are as high as 3.357 × 1020 cm-3 and 30.48 cm2/Vs, respectively. Finally, the performances of the AZO film are evaluated by its practical application in Cu(In1-xGax)Se2 (CIGS) photovoltaic device as a transparent electrode. Benefited from its highly transparent and conductive feature, the most efficient device reveals an efficiency of 7.8% with a short-circuit current density of 28.99 mA/cm2, an open-circuit voltage of 430 mV, and a fill factor of 62.44 under standard conditions.
Kësterite thin films for photovoltaics : a review

Directory of Open Access Journals (Sweden)

Delbos S.

2012-08-01

Full Text Available In the years to come, electricity production is bound to increase, and Cu2ZnSn(S, Se4 (CZTS compounds, due to their suitability to thin-film solar cells, could be a means to fulfill the demand. After explaining the reasons of the sudden interest of the CIGS scientific community for CZTS solar cells, this paper reviews recent papers published on the subject of kësterites-based solar cells. After a description of crystallographic and optoelectronic properties, including CZTS crystalline structure, defect formation and metal composition, this review paper focuses on CZTS synthesis processes and device properties. Synthesis strategies, including one- or two-step processes, deposition temperature, binary formation control via atmosphere control and their effect on device properties are discussed.
Dataset demonstrating the modeling of a high performance Cu(In,GaSe2 absorber based thin film photovoltaic cell

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-04-01

Full Text Available The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage (Voc, short circuit current density Jsc, fill factor (FF, efficiency (η, and collection efficiency ηc have been analyzed.
Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture next-generation thin film solar cells, development of technologies to manufacture CIS solar cell modules, development of technologies to increase high-quality film area; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Jisedai usumaku taiyo denchi module no seizo gijutsu kaihatsu, CIS taiyo denchi module no seizo gijutsu kaihatsu, kohinshitsumaku no daimensekika gijutsu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

With an objective to improve efficiency and reduce cost of CIS-based thin film solar cells, research and development has been made on technologies to increase high-quality CIS film area and technologies to increase speed in the manufacturing process. This paper describes the achievements attained during fiscal 1997. The research covered development of technologies to form high-grade Cu (In, Ga) Se{sub 2} (CIGS) film by using the multi-dimensional deposition process, component technologies for forming a rear electrode, a buffer layer and a transparent electrode, and patterning technologies. As a result of the research, thickness of the CIGS film was reduced to half as much as that of the conventional films, having achieved conversion efficiency of 13.1%, which corresponds to about 90% of the conventional CIGS solar cells. In addition, elucidation was made on the effect of an MoSe{sub 2} layer existing on interface with CIGS/Mo in a CIGS solar cell imposed on solar cell characteristics. In developing an Mo film laser scribing technology, intensity dependence of laser energy was made clear, the energy being required for scribing according to surface condition of the Mo film. (NEDO)
Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of next-generation thin-film solar cell module manufacturing technology - Development of CIS solar cell module manufacturing technology - Development of high-quality film enlargement technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi module no seizo gijutsu kaihatsu / CIS taiyo denchi module no seizo gijutsu kaihatsu / kohinshitsumaku no daimensekika gijutsu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

The project aims to establish a manufacturing process that enables both high-quality CuInSe{sub 2} (CIS) film solar cell enlargement and cost reduction and to develop a device structure which uses less heavy metal for the purposes of increasing the CIS thin-film solar cell size and efficiency and decreasing environmental impact. Several element technologies have been established for increasing the area of high-efficiency Cu(In, Ga)Se{sub 2} (CIGS) solar cells. Concerning the enlargement of the photoabsorption layer which is to assume the most important role, it is found that a high-quality CIGS film, which is near homogeneous though within a 10cm times 10cm area, is fabricated by an in-line vapor deposition method. As for dead area reduction and high-speed patterning, it is found that laser scribing works effectively in the patterning of the window layer and photoabsorption layer. As for reduction in the use of heavy metal, a high efficiency of 16.2% is attained in a cell not using a CdS film as expected in the case of a cell using a CdS film, this thanks to a CIGS film surface reforming technique. The technique of junction formation for CIGS solar cells is improved, and then a true efficiency of 18.5% is achieved. (NEDO)
Site selective doping of Zn for the p-type Cu(In,Ga)Se{sub 2} thin film for solar cell application

Energy Technology Data Exchange (ETDEWEB)

Shirakata, Sho [Faculty of Engineering, Ehime University, Matsuyama 790-8577 (Japan); Tokyo University of Science, Research Institute for Science and Technology, Noda, Chiba 278-8510 (Japan)

2017-06-15

Selective doping of a Zn impurity at the group III site in a Cu(In, Ga)Se{sub 2} (CIGS) film was performed by the doping of Zn at the first stage of the three-stage method. The p-type CIGS:Zn film was obtained, which is in contrast to the n-type CIGS:Zn film obtained by the Zn impurity doping at the second and third-stages. Based on excitation intensity dependence of photoluminescence (PL) at low-temperature, the change in the acceptor level was observed. The enhancement of carrier concentration as a result of Zn-doping in the p-type CIGS:Zn film was observed. The CIGS:Zn solar cells exhibited η of 14.5% and V{sub oc} of 0.658 V, which are higher than that of the corresponding solar cells using the undoped CIGS films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2 thin-film solar cells

Science.gov (United States)

Vilalta-Clemente, Arantxa; Raghuwanshi, Mohit; Duguay, Sébastien; Castro, Celia; Cadel, Emmanuel; Pareige, Philippe; Jackson, Philip; Wuerz, Roland; Hariskos, Dimitrios; Witte, Wolfram

2018-03-01

The introduction of a rubidium fluoride post deposition treatment (RbF-PDT) for Cu(In,Ga)Se2 (CIGS) absorber layers has led to a record efficiency up to 22.6% for thin-film solar cell technology. In the present work, high efficiency CIGS samples with RbF-PDT have been investigated by atom probe tomography (APT) to reveal the atomic distribution of all alkali elements present in CIGS layers and compared with non-treated samples. A Scanning Electron Microscopy Dual beam station (Focused Ion Beam-Gas Injection System) as well as Transmission Kikuchi diffraction is used for atom probe sample preparation and localization of the grain boundaries (GBs) in the area of interest. The analysis of the 3D atomic scale APT reconstructions of CIGS samples with RbF-PDT shows that inside grains, Rb is under the detection limit, but the Na concentration is enhanced as compared to the reference sample without Rb. At the GBs, a high concentration of Rb reaching 1.5 at. % was found, and Na and K (diffusing from the glass substrate) are also segregated at GBs but at lower concentrations as compared to Rb. The intentional introduction of Rb leads to significant changes in the chemical composition of CIGS matrix and at GBs, which might contribute to improve device efficiency.
Review on Alkali Element Doping in Cu(In,GaSe2 Thin Films and Solar Cells

Directory of Open Access Journals (Sweden)

Yun Sun

2017-08-01

Full Text Available This paper reviews the development history of alkali element doping on Cu(In,GaSe2 (CIGS solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIGS absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride (NaF and KF post-deposition treatment (PDT, we discuss and interpret the following issues: ① The delamination of CIGS thin films induced by Na incorporation facilitates CuInSe2 formation and inhibits Ga during low-temperature co-evaporation processes. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss. This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect (CdCu+ density, which is transferred from the acceptor defect (VCu− and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.
Substrate temperature optimization for Cu(In, Ga)Se{sub 2} solar cells on flexible stainless steels

Energy Technology Data Exchange (ETDEWEB)

Liang, X.; Zhu, H.; Chen, J., E-mail: chenjingwei@126.com; Zhou, D.; Zhang, C.; Guo, Y.; Niu, X.; Li, Z.; Mai, Y., E-mail: yaohuamai@hbu.edu.cn

2016-04-15

Graphical abstract: - Highlights: • CIGS thin films are deposited on flexible SS substrates at different substrate temperatures. • CIGS thin films deposited at different T{sub S2} show different Ga/(Ga + In) ratio profiles. • All CIGS thin films show (112) and (220/204) preferred orientations with a shift to higher angles. • Conversion efficiency of 11.3% is obtained for CIGS solar cells deposited at 500 °C. - Abstract: Cu(In, Ga)Se{sub 2} (CIGS) thin films are deposited on flexible stainless steel (SS) substrates using the so called 3-stage co-evaporation process at different substrate temperatures ranging from 440 °C to 640 °C during the 2nd stage and the 3rd stage (T{sub S2}). The effects of T{sub S2} on the properties of CIGS thin films are systematically investigated. It is found by secondary ion mass spectrometry measurement that CIGS thin films deposited at different T{sub S2} show different Ga/(Ga + In) ratio (GGI) profiles along the growth direction. High T{sub S2} facilitates the grain growth and leads to larger grain size. However, high T{sub S2} worsens the spectral response of CIGS solar cells in the long wavelength range, which is partly attributed to the too much iron atom diffusion from the SS substrates into the CIGS thin films. All CIGS thin films show (112) preferred orientations with a shift to higher angle due to variation of compositions. A shoulder-like two-peak structure of (112) and (220/204) peaks appears for CIGS thin films deposited at lower T{sub S2}. Conversion efficiency of 11.3% is obtained for CIGS thin film solar cells deposited at the T{sub S2} of 500 °C.

Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

Directory of Open Access Journals (Sweden)

Chun-Yao Hsu

2013-01-01

Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.
Estimating the Effects of Module Area on Thin-Film Photovoltaic System Costs: Preprint

Energy Technology Data Exchange (ETDEWEB)

Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Fu, Ran [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Silverman, Timothy J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Woodhouse, Michael A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sun, Xingshu [Purdue University; Alam, Muhammad A [Purdue University

2018-03-29

We investigate the potential effects of module area on the cost and performance of photovoltaic systems. Applying a bottom-up methodology, we analyzed the costs associated with thin-film modules and systems as a function of module area. We calculate a potential for savings of up to 0.10 dollars/W and 0.13 dollars/W in module manufacturing costs for CdTe and CIGS respectively, with large area modules. We also find that an additional 0.04 dollars/W savings in balance-of-systems costs may be achieved. Sensitivity of the dollar/W cost savings to module efficiency, manufacturing yield, and other parameters is presented. Lifetime energy yield must also be maintained to realize reductions in the levelized cost of energy; the effects of module size on energy yield for monolithic thin-film modules are not yet well understood. Finally, we discuss possible non-cost barriers to adoption of large area modules.
Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

Science.gov (United States)

Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

2015-10-14

Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.
Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Vermang, Bart, E-mail: Bart.Vermang@angstrom.uu.se [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); ESAT-KU Leuven, University of Leuven, Leuven 3001 (Belgium); Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); Gunnarsson, Rickard; Pilch, Iris; Helmersson, Ulf [Plasma & Coatings Physics, University of Linköping, Linköping 58183 (Sweden); Kotipalli, Ratan; Henry, Frederic; Flandre, Denis [ICTEAM/IMNC, Université Catholique de Louvain, Louvain-la-Neuve 1348 (Belgium)

2015-05-01

Al{sub 2}O{sub 3} rear surface passivated ultra-thin Cu(In,Ga)Se{sub 2} (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al{sub 2}O{sub 3} layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm{sup 2}; as compared to equivalent CIGS solar cells with a standard back contact. - Highlights: • Proof-of-principle ultra-thin CIGS solar cells have been fabricated. • The cells have Mo nano-particles (NPs) as local rear contacts. • An Al{sub 2}O{sub 3} film passivates the CIGS rear surface between these nano-particles. • [Ga]/([Ga] + [In]) grading is used to reduce Mo-NP/CIGS interface recombination.
Flexible Cu(In,Ga)Se2 thin-film solar cells for space application

International Nuclear Information System (INIS)

Otte, Karsten; Makhova, Liudmila; Braun, Alexander; Konovalov, Igor

2006-01-01

Thin film solar cells (TFSC) with Cu(In,Ga)Se 2 (CIGS) as absorber layer have been produced on rigid glass substrates for the terrestrial market. There exist, however, different investigations for manufacturing of TFSC on flexible substrates in order to achieve very thin and highly flexible (rollable) solar cells. Besides their capability to open new terrestrial market segments, they are considered as competitive candidates for future flexible thin film space power generators compared to traditional crystalline solar cells. This paper explains the advantages of flexible TFSC for usage in space, including:-low mass and storage volume, -high power/mass ratio [>100 W/kg at array level], -high radiation resistance against proton and electron radiation and, -lower production costs. These cells can be produced on flexible conductive and insulating substrate materials and have efficiency potentials of up to 15%. We report on the current development steps to adopt the TFSC technology to space requirements as well as the first European industrial approach to the roll-to-roll production of flexible CIGS-TFSC on polyimide as substrate material. Stability issues in space environment concern not only the TFSC itself, but all system components such as interconnects, cell assembly and flexible blankets. The adhesion of the back-contact to the substrate, the emissivity control in the infrared wavelength range, the electrical contacting and interconnection as well as flexible encapsulation are currently under investigation and are discussed in the paper. The production costs for TFSC for space application can be further reduced by sharing resources for the production of flexible TFSC for the terrestrial market; namely by using both, the existing terrestrial investment in production facilities as well as the synergies in R and D
Band Gap Grading of Stacked Cu(In,Ga)S{sub 2} Thin Films

Energy Technology Data Exchange (ETDEWEB)

Jeong, Seonghyun; Sohn, So Hyeong; Shim, Hyeong Seop; Park, Seung Min; Song, Jae Kyu [Kyung Hee University, Seoul (Korea, Republic of); Min, Byoung Koun [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

2016-01-15

The band gap energy of CIGS, which depends on the composition variation and strain effect, can influence the collection and recombination of photocarriers. The solar cell efficiency is improved by the graded band gap in the absorber layer due to the enhanced carrier collection and the reduced carrier recombination. In our previous study, the photovoltaic performance of solar cells was affected by the stacking combination of layers, where the solar cell with dense-bottom and porous-top layers showed better performance than that with a reversely stacked structure. We studied the stacking effect of CIGS thin films. The stacking did not change E {sub g} of each layer, which led to the double grading of E {sub g} along the depth of the stacked films, mainly due to the difference in E {sub g} between the dense and porous layers. The higher degree of the grading in A+B+A improved J {sub sc}. However, the higher density of the defect states in A+B+A reduced V {sub oc}, which was inferred by the short lifetime of the carriers and the broad bandwidth of photoluminescence. Overall, the efficiency of A+B+A was only slightly improved compared to that of B+A.
Shadowgraph studies of laser-assisted non-thermal structuring of thin layers on flexible substrates by shock-wave-induced delamination processes

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Pierre, E-mail: pierre.lorenz@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstraße 15, 04318 Leipzig (Germany); Smausz, Tomi [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary); MTA-SZTE Research Group on Photoacoustic Spectroscopy, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary); Csizmadia, Tamas [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary); Ehrhardt, Martin; Zimmer, Klaus [Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstraße 15, 04318 Leipzig (Germany); Hopp, Bela [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary)

2015-05-01

Highlights: • The shock-wave-induced film delamination (SWIFD) is a laser patterning process. • The SWIFD process of CIGS solar cells was studied by shadowgraph measurements. • The study presented that SWIFD allows the structuring of CIGS solar cells. • The dynamics of the delamination process was analyzed. - Abstract: The laser-assisted microstructuring of thin films especially for electronic applications without damaging the layers or the substrates is a challenge for the laser micromachining techniques. The laser-induced thin-film patterning by ablation of the polymer substrate at the rear side that is called ‘SWIFD’ – shock-wave-induced film delamination patterning has been demonstrated. This study focuses on the temporal sequence of processes that characterize the mechanism of this SWIFD process on a copper indium gallium selenide (CIGS) solar cell stacks on polyimide. For this purpose high-speed shadowgraph experiments were performed in a pump probe experimental set-up using a KrF excimer laser for ablating the rear side of the polyimide substrate and measuring the shock wave generation at laser ablation of the polymer substrate as well as the thin-film delamination. The morphology and size of the thin-film structures were studied by scanning electron microscopy (SEM). Furthermore, the composition after the laser treatment was analyzed by energy dispersive X-ray (EDX) spectroscopy. The shadowgraph experiments allow the time-dependent identification and evaluation of the shock wave formation, substrate bending, and delamination of the thin film in dependence on the laser parameters. These results will contribute to improve the physical understanding of the laser-induced delamination effect for thin-film patterning.
Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

Science.gov (United States)

Kim, Jekyung; Shin, Byungha

2017-09-01

Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.
The Theory of Planned Behavior and E-cig Use: Impulsive Personality, E-cig Attitudes, and E-cig Use.

Science.gov (United States)

Hershberger, Alexandra; Connors, Miranda; Um, Miji; Cyders, Melissa A

2018-04-01

The current paper applied the Theory of Planned Behavior (TPB; Ajzen & Fishbein, 1988) to understand how impulsive personality traits and attitudes concerning e-cig use relate to the likelihood of electronic cigarette (e-cig) use. Seven hundred and fourteen participants (Mean age = 34.04, SD = 10.89, 48.6% female) completed cross-sectional measures of e-cig use attitudes (CEAC) and the Short UPPS-P Impulsive Behavior Scale. A structural path analysis suggested that urgency and deficits in conscientiousness were significantly related to e-cig attitudes (CFI = 0.99, TLI = 0.99, RMSEA = 0.02; urgency: β = 0.32, p = .001; deficits in conscientiousness: β = -0.48, p E-cig attitude scores were significantly higher for e-cig users than non-users, β = 0.85, p e-cig use. Findings provide initial support for a model in which impulsive traits are related to e-cig use through positive e-cig attitudes.
One, step electrodeposition of Cu(Ga,In)Se2 thin films from aqueous solution

Science.gov (United States)

Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

2005-03-01

Cu(In,Ga)Se{2} (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl{2}, InCl{3}, GaCl{3} and H{2}SeO{3}. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray analysis showed the formation of CuIn{1-x}GaxSe{2} films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.
Flexible CIGS solar cells on large area polymer foils with in-line deposition methods and application of alternative back contacts - Final report

Energy Technology Data Exchange (ETDEWEB)

Tiwari, A. N.

2009-08-15

This illustrated report for the Swiss Federal Office of Energy (SFOE) summarises the work performed within this project and also reports on synergies with other projects that helped to make a significant contribution to the development of CIGS thin film solar cells on flexible substrates such as polymer foils. The project's aims were to learn more about up-scaling issues and to demonstrate the abilities required for the processing of layers on large area polyimide foils for flexible CIGS solar cells. Custom-built evaporators that were designed and constructed in-house are described. A CIGS system for in-line deposition was also modified for roll-to-roll deposition and alternative electrical back contacts to conventional ones were evaluated on flexible polyimide foils. The objectives of the project and the results obtained are looked at and commented on in detail.
Optical Design of Textured Thin-Film CIGS Solar Cells with Nearly-Invisible Nanowire Assisted Front Contacts

Directory of Open Access Journals (Sweden)

Joop van Deelen

2017-04-01

Full Text Available The conductivity of transparent front contacts can be improved by patterned metallic nanowires, albeit at the cost of optical loss. The associated optical penalty can be strongly reduced by texturization of the cell stack. Remarkably, the nanowires themselves are not textured and not covered in our design. This was shown by optical modeling where the width of the nanowire, the texture height and the texture period were varied in order to obtain a good insight into the general trends. The optical performance can be improved dramatically as the reflection, which is the largest optical loss, can be reduced by 95% of the original value. The spectra reveal absorption in the Cu(In,GaSe2 (CIGS layer of 95% and reflection below 2% over a large part of the spectrum. In essence, a virtually black CIGS cell stack can be achieved for textured cells with a metal nanogrid. Moreover, it turned out that the ratio between the width of the nanowire and the height of the texture is a critical parameter for optical losses.
Some physical parameters of CuInGaS_2 thin films deposited by spray pyrolysis for solar cells

International Nuclear Information System (INIS)

Kotbi, Ahmed; Hartiti, Bouchaib; Fadili, Salah; Ridah, Abderraouf; Thevenin, Philippe

2017-01-01

Copper-indium-gallium-disulphide (CuInGaS_2) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS_2 (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS_2 films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm"-"1. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E_T_a_i_l) of CuInGaS_2 thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS_2 make them an attractive material for photovoltaic devices. (orig.)
In-situ sol-gel synthesis and thin film deposition of Cu(In,Ga)(S,Se)2 solar cells

International Nuclear Information System (INIS)

Oliveira, L.; Lyubenova, T.; Marti, R.; Fraga, D.; Rey, A.; Carda, J.; Kozhukharov, V.

2013-01-01

Full text: Nowadays chalcogenide-based solar cells, like Cu(In,Ga)Se 2 , are competitive in the photovoltaic market, due to its improved performances like higher efficiency (20,3%), long-time stability and excellent durability. In addition, CIGS stand out with an exceptionally high absorption coefficient (more than; 105/cm for 1.5eV) and higher energy photons. These properties make it an excellent candidate as an absorber material for large scale production of photovoltaic modules for building-integrated applications. Traditional methods of manufacture involve vacuum processes including co-evaporation and sputtering that increase production costs. With the aim to lower the expenses by using non-vacuum solution processes we propose an ‘in-situ’ sol-gel synthesis route and direct thin film deposition in the same production step. As a result, we achieved better stoichiometric control, simplicity in the procedure and cost reduction. In this work we describe a procedure to obtain CIGS absorber layer by soft chemistry technique and further deposition onto different substrates. Preparation parameters like precursors, chemical composition, solvents, thermal treatment factors (temperature, time, and atmosphere) were detailed studied. Finally, the resulting materials were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) coupled with Energy dispersive X-ray analysis (EDAX), UV-VIS Spectroscopy among others.; key words: sol-gel synthesis, thin film deposition, photovoltaic modules, solar cells
Superior light trapping in thin film silicon solar cells through nano imprint lithography

Energy Technology Data Exchange (ETDEWEB)

Soppe, W.J.; Dorenkamper, M.S.; Schropp, R.E.I.; Pex, P.P.A.C.

2013-10-15

ECN and partners have developed a fabrication process based on nanoimprint lithography (NIL) of textures for light trapping in thin film solar cells such as thin-film silicon, OPV, CIGS and CdTe. The process can be applied in roll-to-roll mode when using a foil substrate or in roll-to-plate mode when using a glass substrate. The lacquer also serves as an electrically insulating layer for cells if steel foil is used as substrate, to enable monolithic series interconnection. In this paper we will show the superior light trapping in thin film silicon solar cells made on steel foil with nanotextured back contacts. We have made single junction a-Si and {mu}c-Si and a-Si/{mu}c-Si tandem cells, where we applied several types of nano-imprints with random and periodic structures. We will show that the nano-imprinted back contact enables more than 30% increase of current in comparison with non-textured back contacts and that optimized periodic textures outperform state-of-the-art random textures. For a-Si cells we obtained Jsc of 18 mA/cm{sup 2} and for {mu}c-Si cells more than 24 mA/cm{sup 2}. Tandem cells with a total Si absorber layer thickness of only 1350 nm have an initial efficiency of 11%.
Some physical parameters of CuInGaS{sub 2} thin films deposited by spray pyrolysis for solar cells

Energy Technology Data Exchange (ETDEWEB)

Kotbi, Ahmed [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Hartiti, Bouchaib; Fadili, Salah [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Ridah, Abderraouf [Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Thevenin, Philippe [University of Lorraine, LMOPS Laboratory, Department of Physics, Metz (France)

2017-05-15

Copper-indium-gallium-disulphide (CuInGaS{sub 2}) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS{sub 2} (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS{sub 2} films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm{sup -1}. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E{sub Tail}) of CuInGaS{sub 2} thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS{sub 2} make them an attractive material for photovoltaic devices. (orig.)
Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Science.gov (United States)

Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

2017-11-01

Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.
Solid thin film materials for use in thin film charge-coupled devices

International Nuclear Information System (INIS)

Lynch, S.J.

1983-01-01

Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)
Correcting for interference effects in the photoluminescence of Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Wolter, Max Hilaire; Siebentritt, Susanne [Laboratory for Photovoltaics, Physics and Materials Science Research Unit, University of Luxembourg, 4422 Belvaux (Luxembourg); Bissig, Benjamin; Reinhard, Patrick; Buecheler, Stephan [Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstr. 129, 8600 Duebendorf (Switzerland); Jackson, Philip [Zentrum fuer Sonnenenergie-und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), 70565 Stuttgart (Germany)

2017-06-15

Photoluminescence (PL) measurements are performed on high-quality Cu(In,Ga)Se{sub 2} (CIGS) thin films with the intention of investigating their electronic structure. Due to the nature of the CIGS absorbers, notably their smooth surface and a graded band gap, the measured PL spectra are distorted by interference effects, limiting thus the information that one can gain. Here we show that, by varying the entrance angle of the laser light and the detection angle of the emitted PL, we are able to correct for interference effects. As a result, we receive interference-free PL spectra that enable us to determine quantities such as band gap energies and quasi-Fermi level splittings (QFLS). Furthermore, we show that it is possible to measure the QFLS even without correcting for interference effects and we compare the QFLS to the open circuit voltage for a particular sample. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Thin film processes II

CERN Document Server

Kern, Werner

1991-01-01

This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Directory of Open Access Journals (Sweden)

Krawczak Ewelina

2017-01-01

Full Text Available Transparent Conductive Oxides (TCOs characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.
Efficiency enhancement of CIGS compound solar cell fabricated using homomorphic thin Cr{sub 2}O{sub 3} diffusion barrier formed on stainless steel substrate

Energy Technology Data Exchange (ETDEWEB)

Sim, Jae-Kwan; Lee, Seung-Kyu; Kim, Jin-Soo; Jeong, Kwang-Un; Ahn, Haeng-Keun; Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr

2016-12-15

Highlights: • A chromium oxide layer is formed as diffusion barrier by thermal oxidation process on STS substrate. • A Cr{sub 2}O{sub 3} layer effectively reduces impurities diffusion into the CIGS absorber layer. • The Cr{sub 2}O{sub 3} layer plays an important role in increasing the efficiency by reduction of impurity diffusion. - Abstract: It is known that the efficiency of flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells fabricated on stainless-steel (STS) substrates deteriorates due to iron (Fe) and Cr impurities diffusing into the CIGS absorber layer. To overcome this problem, a nanoscale homomorphic chromium oxide layer was formed as a diffusion barrier by thermal oxidation on the surface of STS substrates for 1 min at 600 °C in oxygen atmosphere. By TEM and grazing-incidence X-ray diffraction (GIXRD), it was confirmed that the formed oxide layer on surface of STS substrates was a Cr{sub 2}O{sub 3} layer. It was found that the formed homomorphic Cr{sub 2}O{sub 3} thin layer of about 15 nm thickness was an effective diffusion barrier to reduce impurity diffusion into the CIGS layer by secondary ion mass spectroscopy (SIMS). In contrast to the efficiency of CIGS solar cell without homomorphic Cr{sub 2}O{sub 3} diffusion layer is 8.6%, whereas with diffusion barrier it increases to 10.6% because of impurities such as Fe and Cr from the STS substrate into the CIGS layer. It reveals that the layer formed on the surface of STS substrate by thermal oxidation process plays an important role in increasing the performance of CIGS solar cells.
Preparation and Characterization of Cu(In,GaSe2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Directory of Open Access Journals (Sweden)

Jiang Liu

2012-01-01

Full Text Available Se-containing precursor films with two different compositions were prepared by magnetron sputtering from and targets, and then were selenized using Se vapor. The effects of precursor composition and selenization temperature on the film properties were investigated. The results show that Se phase plays a critical role in film growth and electrical properties of CIGS films. The Cu-rich films exhibit different surface morphology and better crystallinity, as compared to the Cu-poor films. All the CIGS films exhibit p-type conductivity. The resistivity of the Cu-rich films is about three orders of magnitude lower than that of the Cu-poor films, which is attributed to the presence of p-type highly conductive Se phase.
Pyrolyzed thin film carbon

Science.gov (United States)

Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

2010-01-01

A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.
Study on analytical modelling approaches to the performance of thin film PV modules in sunny inland climates

International Nuclear Information System (INIS)

Torres-Ramírez, M.; Nofuentes, G.; Silva, J.P.; Silvestre, S.; Muñoz, J.V.

2014-01-01

This work is aimed at verifying that analytical modelling approaches may provide an estimation of the outdoor performance of TF (thin film) PV (photovoltaic) technologies in inland sites with sunny climates with adequate accuracy for engineering purposes. Osterwald's and constant fill factor methods were tried to model the maximum power delivered and the annual energy produced by PV modules corresponding to four TF PV technologies. Only calibrated electrical parameters at STC (standard test conditions), on-plane global irradiance and module temperature are required as inputs. A 12-month experimental campaign carried out in Madrid and Jaén (Spain) provided the necessary data. Modelled maximum power and annual energy values obtained through both methods were statistically compared to the experimental ones. In power terms, the RMSE (root mean square error) stays below 3.8% and 4.5% for CdTe (cadmium telluride) and CIGS (copper indium gallium selenide sulfide) PV modules, respectively, while RMSE exceeds 5.4% for a-Si (amorphous silicon) or a-Si:H/μc-Si PV modules. Regarding energy terms, errors lie below 4.0% in all cases. Thus, the methods tried may be used to model the outdoor behaviour of the a-Si, a-Si:H/μc-Si, CIGS and CdTe PV modules tested – ordered from the lowest to the highest accuracy obtained – in sites with similar spectral characteristics to those of the two sites considered. - Highlights: • Simple analytical methods to model the outdoor behaviour of thin film PV (photovoltaic) technologies. • 8 PV modules were deployed outdoors over a 12-month period in two sunny inland sites. • RMSE (root mean square error) values stay below 3.8% and 4.5% in CdTe (cadmium telluride) and CIGS (copper indium gallium selenide sulfide) PV modules. • Errors remain below 4.0% for all the PV modules and sites in energy terms. • Simple methods: suitable estimation of PV outdoor behaviour for engineering purposes
thin films

Indian Academy of Sciences (India)

microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...
Thin Film Microbatteries

International Nuclear Information System (INIS)

Dudney, Nancy J.

2008-01-01

Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and
Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

Science.gov (United States)

Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

2018-01-01

This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.
Ceramic Composite Thin Films

Science.gov (United States)

Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.
Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Yu-Kuang Liao

2017-04-01

Full Text Available Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD and chemical bath deposition (CBD as used by the Cu(In,GaSe2 (CIGS thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.
Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells.

Science.gov (United States)

Brun, Nadja Rebecca; Wehrli, Bernhard; Fent, Karl

2016-02-01

Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L(-1) molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L(-1). From OPV, copper (14 μg L(-1)), zinc (87 μg L(-1)) and silver (78 μg L(-1)) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. Copyright © 2015 Elsevier B.V. All rights reserved.
Distinction of [220] and [204] textures of Cu(In,Ga)Se{sub 2} film and their growth behaviors depending on substrate nature and Na incorporation

Energy Technology Data Exchange (ETDEWEB)

Cho, Dae-Hyung, E-mail: dhcho@etri.re.kr [IT Components and Materials Industry Technology Research Department, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700 (Korea, Republic of); Kim, Jeha [Department of Solar & Energy Engineering, Cheongju University, 298 Daeseongro, Sangdang-gu, Cheongju, Chungbuk 360-764 (Korea, Republic of); Chung, Yong-Duck [IT Components and Materials Industry Technology Research Department, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700 (Korea, Republic of); Korea University of Science and Technology (UST), 217 Gajeongno, Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

2015-08-31

For better understanding of the structural property of polycrystalline tetragonal Cu(In,Ga)Se{sub 2} (CIGS) thin films grown on soda-lime glass, it is necessary to characterize the [220]- and [204]-oriented textures clearly that are related to the different physical properties. However, the distinction between the [220]- and [204]-oriented textures is very difficult because of their nearly identical plane spacings and atomic arrangements. Using X-ray diffraction techniques of high resolution θ–2θ scanning and reciprocal space mapping, we distinguished the [220]- and [204]-oriented textures of CIGS films and observed that the behaviors of [220] and [204] textures independently depended on both substrate nature and Na presence. We report the Na- and substrate-related dependence of the physical properties of the CIGS film was attributed to the independent growth behaviors of the [220] and [204] textures in the CIGS. - Highlights: • We investigated [220]- and [204]-oriented textures of Cu(In,Ga)Se{sub 2} (CIGS) films. • X-ray diffraction methods distinguished two textures. • The growth behaviors were influenced by underlying substrate and Na. • The [220] and [204] textures in CIGS should be differentially observed.
Photoelectrochemical water splitting using CuIn{sub 1-x}Ga{sub x}S{sub 2}/CdS thin-film solar cells for hydrogen generation

Energy Technology Data Exchange (ETDEWEB)

Jahagirdar, Anant H.; Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, FL 32922 (United States)

2007-09-22

Photoelectrochemical (PEC) efficiency of a PEC cell constructed by series connecting two {proportional_to}0.43 cm{sup 2} size, 5.95% (AM1.5) efficient CuIn{sub 1-x}Ga{sub x}S{sub 2} (CIGS2) thin-film photovoltaic (PV) cells having transparent and conducting back contacts, outside the electrolyte, to RuS{sub 2} photoanode and platinum cathode, in the electrolyte, for oxygen and hydrogen generation by water splitting was 2.99%. PV electrolysis efficiency of a similar setup prepared using two CIGS2 PV cells having opaque Mo back contacts and highest achieved efficiency of 11.99% (AM1.5) connected to RuS{sub 2} and Pt electrodes was 8.78%. This significant result points a way toward attaining higher PEC efficiencies. (author)
Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful
Microstructure characterization of the soda-lime-glass/copper-indium-gallium-selenium interface in Cu-poor Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Wang, Jian, E-mail: wangjustb@gmail.com; Qiao, Yi; Zhu, Jie, E-mail: jiezhu@ustb.edu.cn

2015-05-29

The microstructure characteristics of the soda-lime-glass/Cu(In,Ga)Se{sub 2} (SLG/CIGS) interface in Cu-poor CIGS films are investigated by transmission electron microscopy and selected area electronic diffraction (SAED). The SAED patterns show very sharp and strong spots, indicating the main structure of CIGS chalcopyrite. Small dispersed crystals with size distribution from 2 to 5 nm seem to be embedded in amorphous matrix, and additional spots indicate the presence of an ordered vacancy compound (OVC). This observation is consistent with the Raman results, and the OVC phase with the nanoclusters exists in the CIGS matrix, instead of layer structure. Lattice distortion results in local changes in contrast. Some pseudo-disordered structure is observed, however, the structure is actually the chalcopyrite CIGS structure. 180° rotation twins are also observed at the SLG/CIGS interface. Lattice distortion is widely observed at the interface of the Cu-poor CIGS films, and the extra spots could be caused by different lattice orientations. - Highlights: • Cu(In,Ga)Se{sub 2} (CIGS) were prepared on bare soda-lime-glass (SLG) substrates. • Microstructure of the SLG/CIGS interface was investigated. • An ordered vacancy compound (OVC) phase was observed. • The OVC phase with nanoclusters exists in the CIGS matrix, instead of layer structure. • 180° rotation twins were observed at the SLG/CIGS interface.
Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells

Energy Technology Data Exchange (ETDEWEB)

Brun, Nadja Rebecca [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Wehrli, Bernhard [Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Fent, Karl, E-mail: karl.fent@fhnw.ch [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland)

2016-02-01

Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L{sup −1} molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L{sup −1}. From OPV, copper (14 μg L{sup −1}), zinc (87 μg L{sup −1}) and silver (78 μg L{sup −1}) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. - Highlights: • Photovoltaics may be disposed in the environment after usage. • Copper indium gallium selenide (CIGS) and organic (OPV) cells were compared. • Morphological and molecular effects were assessed in zebrafish embryos. • Environmental condition affected metal leaching and ecotoxicological activity. • Damaged CIGS cells pose higher risk to the environment than OPV cells.
Deuterium markers in CdS and Zn(O,S) buffer layers deposited by solution growth for Cu(In,Ga)Se{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Witte, Wolfram; Eicke, Axel; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany); Souza, Roger A. de; Martin, Manfred [Institute of Physical Chemistry, RWTH Aachen University (Germany)

2017-12-15

This contribution describes an easy and cheap approach to introduce deuterium (D) as an isotopic marker into the commonly used buffer layer materials CdS and Zn(O,S) for Cu(In,Ga)Se{sub 2} (CIGS) thin-film solar cells. D was successfully incorporated during the growth of Zn(O,S) and CdS buffer layers by chemical bath deposition (CBD) with D{sub 2}O. CIGS solar cells prepared with D-containing buffers grown by CBD exhibit power conversion efficiencies above 16%, that is, the D content has no detrimental effect on the performance or other solar cell parameters of the devices. With depth profiles obtained by time-of-flight secondary ion mass spectrometry (ToF-SIMS) we clearly detect the intentionally incorporated D within the solution-grown Zn(O,S) buffer. Assuming that D is present as OD, we compare the amount of OD within the Zn(O,S) layer with the amount of OH on the surface of the subsequent sputtered (Zn,Mg)O layer. Possible applications and future experiments of the method inserting isotopic markers such as D in functional layers of chalcopyrite-type thin-film solar cells and beyond are discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
NMR characterization of thin films

Science.gov (United States)

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.
NMR characterization of thin films

Science.gov (United States)

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.
Handbook of thin film technology

CERN Document Server

Frey, Hartmut

2015-01-01

“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

Rare Earth Oxide Thin Films

CERN Document Server

Fanciulli, Marco

2007-01-01

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.
Thin-film solar cells

International Nuclear Information System (INIS)

Aberle, Armin G.

2009-01-01

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.
Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

International Nuclear Information System (INIS)

Watanabe, S.

1984-01-01

The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature
Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films
Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

Energy Technology Data Exchange (ETDEWEB)

Vasekar, Parag S., E-mail: psvasekar@yahoo.co [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States); Jahagirdar, Anant H.; Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States)

2010-01-31

Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of {approx} 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 {mu}m CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 {mu}m absorber prepared under similar conditions as that of a 2.7 {mu}m thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10{sup -10} mA/cm{sup 2} to 1.78 x 10{sup -8} mA/cm{sup 2}. This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.
Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

International Nuclear Information System (INIS)

Vasekar, Parag S.; Jahagirdar, Anant H.; Dhere, Neelkanth G.

2010-01-01

Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of ∼ 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 μm CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 μm absorber prepared under similar conditions as that of a 2.7 μm thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10 -10 mA/cm 2 to 1.78 x 10 -8 mA/cm 2 . This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.
Electronic defect study on low temperature processed Cu(In,Ga)Se2 thin-film solar cells and the influence of an Sb layer

International Nuclear Information System (INIS)

Van Puyvelde, L; Lauwaert, J; Devulder, W; Detavernier, C; Vrielinck, H; Tempez, A; Nishiwaki, S; Pianezzi, F; Tiwari, A N

2015-01-01

A way to lower the manufacturing cost of Cu(In,Ga)Se 2 (CIGS) thin-film solar cells is to use flexible polymer substrates instead of rigid glass. Because such substrates require lower temperature during absorber deposition, the grain growth of the absorber layer can be hindered which leads to a lower cell performance. Partial compensation of this efficiency loss might be accomplished by growing the absorber in the presence of Sb, which is reported to promote grain growth. In this work CIGS solar cells, deposited on glass substrates, at a reduced substrate temperature with a thin Sb layer (7, 12 nm) on top of the Mo contact are investigated. The diffusion profile of Sb is measured with plasma profiling time of flight mass spectrometry. The beneficial effect of Sb on efficiency and grain size is shown in quantum efficiency measurements and with scanning electron microscopy, respectively. Electric spectroscopy is used to explore the possible effects on the defect structure, more in particular on the dominant shallow acceptor. Admittance spectra exhibit a capacitance step to the geometric capacitance plateau at low temperature (5–60 K). Analyzing this capacitance step, we obtained a good estimate of the activation energy of the intrinsic defects that provide the p-type conductivity of the CIGS absorber. The measurements did not show a change in the nature of the dominant acceptor upon Sb treatment. (paper)
Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

Directory of Open Access Journals (Sweden)

K. Sharma

2014-01-01

Full Text Available Aluminium-doped zinc oxide (ZnO:Al grown by expanding thermal plasma chemical vapour deposition (ETP-CVD has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO. In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm than those grown using the low thermal budget (LTB conditions (~2 × 10−3 Ω·cm, whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9% than for the HTB condition (up to 9.0%. Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.
DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

International Nuclear Information System (INIS)

Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

2007-01-01

An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film
Alternative bufferlayers for CIGS solarcells

Energy Technology Data Exchange (ETDEWEB)

Beleanu, A.; Gruhn, T.; Blum, C.G.F.; Balke, B.; Felser, C. [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, Mainz (Germany)

2010-07-01

Cadmium sulfide is a highly efficient buffer layer material in Cu(In,Ga)(S,Se2)[CIGS] solar devices, but for environmental reasons and possible gains in efficiency there is a great interest in replacing CdS by a cadmium-free alternative buffer layer. Using standard density functional theory (DFT) methods possible candidates like LiZnP and LiCuS have been proposed as alternative buffer layers. The experimental verification of the DFT results was quite challenging due to the fact that LiCuS was an unknow and completely new material. In a first step, we tried to synthesize LiCuS through solid state reactions in a corund crucible. After optimizing the parameters and successfully synthesizing the material its properties were investigated. In a second step, huge amounts of LiCuS and LiZnP were synthesized and pressed using Spark Plasma Sintering as 3 inch targets. LiCuS and LiZnP films were grown by radio-frequency magnetron sputtering from these target and their properties as an alternative buffer layer in CIGS solar cells were investigated. The 1:1:1 stoichiometry of the films was delivered from in-situ XPS measurements. Absorption measurements show a band gap of {approx}2.0 eV which is in good agreement with the theoretical estimates.
Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.
Stability of CIGS Solar Cells and Component Materials Evaluated by a Step-Stress Accelerated Degradation Test Method: Preprint

Energy Technology Data Exchange (ETDEWEB)

Pern, F. J.; Noufi, R.

2012-10-01

BZO layers on CIGS cell pieces was observed that was not seen on BZO/glass, and a CdS/CIGS sample displayed a small darkening and then flaking feature. Additionally, standard AlNi grid contact was less stable than thin Ni grid contact at T/RH ≥ 70/70. The edge sealant and moisture-blocking films were effective to block moisture ingress, as evidenced by the good stability of most CIGS solar cells and device components at T/RH = 85/70 for 704 h, and by preservation of the initial blue color on the RH indicator strips. The SSADT experiment is ongoing to be completed at T/RH = 85/85.
Thin films and nanomaterials

International Nuclear Information System (INIS)

Jayakumar, S.; Kannan, M.D.; Prasanna, S.

2012-01-01

The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials
Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se{sub 2} thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Acciarri, M.; Binetti, S.; Le Donne, A.; Lorenzi, B.; Caccamo, L.; Miglio, L. [Dipartimento di Scienza dei Materiali e Solar Energy Research Center MIB-SOLAR, Universita di Milano Bicocca, Milan (Italy); Moneta, R.; Marchionna, S.; Meschia, M. [Voltasolar s.r.l, Turate (Italy)

2011-08-15

In this paper we report a new method for Cu(In,Ga)Se{sub 2} deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se{sub 2} has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm{sup 2} have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver sion, and protection and passivating layers. Ind...
Biomimetic thin film synthesis

Energy Technology Data Exchange (ETDEWEB)

Graff, G.L.; Campbell, A.A.; Gordon, N.R.

1995-05-01

The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.
Selective removal of CuIn1−xGaxSe2 absorber layer with no edge melting using a nanosecond Nd : YAG laser

International Nuclear Information System (INIS)

Lee, S H; Kim, C K; In, J H; Jeong, S H; Shim, H S

2013-01-01

This paper reports that selective removal of a CuIn 1−x Ga x Se 2 (CIGS) thin film on a Mo-coated glass substrate can be achieved with no edge melting or damage of the Mo layer using a nanosecond Nd : YAG laser with a wavelength of 1064 nm. It is shown that the two crucial parameters that determine the possibility of clean removal of only the CIGS layer are Ga concentration of the CIGS film and laser fluence. For CIGS films with Ga/(Ga+In) ratio greater than about 0.2 for which the band gap energy is close to or over the photon energy (1.17 eV), laser-induced thermal expansion proved to be the mechanism of film removal that drives an initial bulging of the film and then fracture into tens of micrometre sized fragments as observed in in situ shadowgraph images. The fracture-type removal of CIGS films was further verified by scanning electron micrographs of the craters showing that the original shapes of the CIGS polycrystals remain intact along the crater rim. A numerical simulation of film temperature under the irradiation conditions of selective removal was carried out to show that the magnitude of induced thermal stress within the film closely agreed to the yield strength of the CIGS thin film. The results confirmed that a nanosecond laser could be a better choice for P2 and P3 scribing of CIGS thin films if process conditions are properly determined. (paper)
Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov (United States)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed
Thin Film & Deposition Systems (Windows)

Data.gov (United States)

Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...
Solar Spectral and Module Temperature Influence on the Outdoor Performance of Thin Film PV Modules Deployed on a Sunny Inland Site

Directory of Open Access Journals (Sweden)

G. Nofuentes

2013-01-01

Full Text Available This work aims at analysing the influence of both module temperature and solar spectrum distribution on the outdoor performance of the following thin film technologies: hydrogenated amorphous silicon (a-Si:H, cadmium telluride (CdTe, copper indium gallium selenide sulfide (CIGS, and hydrogenated amorphous silicon/hydrogenated microcrystalline silicon hetero-junction (a-Si:H/μc-Si:H. A 12-month experimental campaign carried out in a sunny inland site in which a module of each one of these technologies was tested and measured outdoors has provided the necessary empirical data. Results show that module temperature exerts a limited influence on the performance of the tested a-Si:H, CdTe, and a-Si:H/μc-Si:H modules. In contrast, the outdoor behaviour of the CIGS module is the most affected by its temperature. Blue-rich spectra enhance the outdoor behaviour of the a-Si:H and a-Si:H/μc-Si:H modules while it is the other way round for the CIGS module. However, the CdTe specimen shows little sensitivity to the solar spectrum distribution. Anyway, spectral effects are scarcely relevant on an annual basis, ranging from gains for the CIGS module (1.5% to losses for the a-Si:H module (1.0%. However, the seasonal impact of the spectrum shape is more noticeable in these two materials; indeed, spectral issues may cause performance gains or losses of up to some 4% when winter and summer periods are considered.

Characterization of organic thin films

CERN Document Server

Ulman, Abraham; Evans, Charles A

2009-01-01

Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...
Optical Simulation of Light Management in CIGS Thin-Film Solar Cells Using Finite Element Method

Directory of Open Access Journals (Sweden)

Nikola Bednar

2015-12-01

Full Text Available In this paper we present an optical simulation of light management in Cu(In,GaSe2 thin-film solar cells with reduced absorber layer thickness, with the goal of absorption enhancement in the absorber layer. The light management was achieved by texturing of the substrate layer, and the conformal growth of all the following layers was assumed. Two texturing shapes have been explored: triangular and convex, with different periods and height aspect ratios. The simulations have shown that significant enhancement of absorption within the absorber layer can be achieved using the proposed geometry. The results showed that the triangular textures with small periods (100–200 nm and high aspect ratios have the most prominent effect on the enhancement of absorption within the absorber layer, although they are difficult to achieve experimentally.
Self-Limited Growth in Pentacene Thin Films.

Science.gov (United States)

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.
Thin films for precision optics

International Nuclear Information System (INIS)

Araujo, J.F.; Maurici, N.; Castro, J.C. de

1983-01-01

The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt
Analysis of Hard Thin Film Coating

Science.gov (United States)

Shen, Dashen

1998-01-01

MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.
Thin-film solar cell

NARCIS (Netherlands)

Metselaar, J.W.; Kuznetsov, V.I.

1998-01-01

The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with
Thin-Film Material Science and Processing | Materials Science | NREL

Science.gov (United States)

Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer
Nanocrystal thin film fabrication methods and apparatus

Science.gov (United States)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

2018-01-09

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.
New Sunshine Project FY 1996 report on the results of development of photovoltaic power generation system commercialization technologies. Research on commercialization of the technologies for production of thin-film photovoltaic cells (Development of fabrication technologies of high-quality CuInSe{sub 2}-based thin-film solar cells); 1996 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu (kohinshitsuka gijutsu (CuInSe{sub 2} taiyo denchi seizo no gijutsu kaihatsu))

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

Described herein are the FY 1996 results of development of fabrication technologies for high-quality CuInSe{sub 2}-based photovoltaic cells. The Cu-Ga alloy/In-stacked precursor film is prepared for production of the high-quality thin-film absorber applicable to large-area module fabrication, and selenized by the vapor-phase selenization in a H{sub 2}Se gas atmosphere to produce the thin light-absorbing film in which In and Ga are present at graded concentrations. Increasing Ga alloy content in the CIGS-based thin-film photovoltaic cell fails to widen the forbidden band and improve V{sub oc}, and further optimization works are needed. The method is developed for production of thin-film buffer layer of sulfur-containing Zn compound which can give the cell characteristics equivalent to those of CdS generally used for CIS-based thin-film photovoltaic cell. It is clarified that the photovoltaic cell characteristics can be improved by use of a transparent electroconductive ZnO film of stacked structure, produced by a combination of RF sputtering and DC sputtering. For the patterning technologies necessary for forming series connection on a mini-module, the laser scribing method is applicable to the metal base-electrode, and the mechanical scribing method to the light absorber and window layer. (NEDO)
Characterizations of photoconductivity of graphene oxide thin films

Directory of Open Access Journals (Sweden)

Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.
Development of neutron diffuse scattering analysis code by thin film and multilayer film

International Nuclear Information System (INIS)

Soyama, Kazuhiko

2004-01-01

To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering
Thin film tritium dosimetry

Science.gov (United States)

Moran, Paul R.

1976-01-01

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.
Optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirose, Y.; Warasawa, M. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Takakura, K. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Kimura, S. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, S.F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Ohyama, H. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Sugiyama, M., E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

2011-08-31

The optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} (CIGS) solar cells and the thin films that composed the CIGS solar cell structure were investigated. The transmittance of indium tin oxide (ITO), ZnO:Al, ZnO:Ga, undoped ZnO, and CdS thin films did not change for a fluence of up to 1.5 x 10{sup 18} cm{sup -2}. However, the resistivity of ZnO:Al and ZnO:Ga, which are generally used as window layers for CIGS solar cells, increased with increasing irradiation fluence. For CIGS thin films, the photoluminescence peak intensity due to Cu-related point defects, which do not significantly affect solar cell performance, increased with increasing electron irradiation. In CIGS solar cells, decreasing J{sub SC} and increasing R{sub s} reflected the influence of irradiated ZnO:Al, and decreasing V{sub OC} and increasing R{sub sh} mainly tended to reflect the pn-interface properties. These results may indicate that the surface ZnO:Al thin film and several heterojunctions tend to degrade easily by electron irradiation as compared with the bulk of semiconductor-composed solar cells.
Thin films for emerging applications v.16

CERN Document Server

Francombe, Maurice H

1992-01-01

Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.
Interfaces and thin films physics

International Nuclear Information System (INIS)

Equer, B.

1988-01-01

The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr
Buckling of Thin Films in Nano-Scale

Directory of Open Access Journals (Sweden)

Li L.A.

2010-06-01

Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.
Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)
Temperature dependence of LRE-HRE-TM thin films

Science.gov (United States)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.
Application-related properties of giant magnetostrictive thin films

International Nuclear Information System (INIS)

Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

2002-01-01

In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties
Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

P-type CuxS thin films: Integration in a thin film transistor structure

International Nuclear Information System (INIS)

Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

2013-01-01

Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour
Semiconductor-nanocrystal/conjugated polymer thin films

Science.gov (United States)

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2014-06-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.
Thin liquid films dewetting and polymer flow

CERN Document Server

Blossey, Ralf

2012-01-01

This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system. What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films. Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...
Self-assembly of dodecaphenyl POSS thin films

Science.gov (United States)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.
Organic thin films and surfaces directions for the nineties

CERN Document Server

Ulman, Abraham

1995-01-01

Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther
Novel chemical analysis for thin films

International Nuclear Information System (INIS)

Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji

1991-01-01

Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)
Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Lordi, Vincenzo [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2016-09-30

The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enabling R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.
Nanostructured thin film coatings with different strengthening effects

Directory of Open Access Journals (Sweden)

Panfilov Yury

2017-01-01

Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.
Thin Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K.

1998-11-19

The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.
Thin films: Past, present, future

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K

1995-04-01

This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.
Non-linear optics of nano-scale pentacene thin film

Science.gov (United States)

Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

2016-07-01

We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.
Oxidation of ruthenium thin films using atomic oxygen

Energy Technology Data Exchange (ETDEWEB)

McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

2015-12-31

In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.
Thin Films in the Photovoltaic Industry

International Nuclear Information System (INIS)

Jaeger-Waldau, A.

2008-03-01

In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.
Nanostructured thin films and coatings functional properties

CERN Document Server

Zhang, Sam

2010-01-01

The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e
Electrical and optical properties of ultrasonically sprayed Al-doped zinc oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Babu, B.J., E-mail: jbabu@cinvestav.mx [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico); Maldonado, A.; Velumani, S.; Asomoza, R. [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico)

2010-10-25

Aluminium-doped ZnO (AZO) films were deposited by ultrasonic spray pyrolysis (USP) technique to investigate its potential application as antireflection coating and top contact layer for copper indium gallium diselenide (CIGS) based photovoltaic cells. The solution used to prepare AZO thin films contained 0.2 M of zinc acetate and 0.2 M of aluminium pentanedionate solutions in the order of 2, 3 and 4 at.% of Al/Zn. AZO films were deposited onto glass substrates at different substrate temperatures starting from 450 deg. C to 500 deg. C. XRD and FESEM analysis revealed the structural properties of the films and almost all the films possessed crystalline structure with a preferred (0 0 2) orientation except for the 4 at.% of Al. Grain size of AZO films varied from 29.7 to 37 nm for different substrate temperatures and atomic percentage of aluminium. The average optical transmittance of all films with the variation of doping concentration and substrate temperature was 75-90% in the visible range of wavelength 600-700 nm. Optical direct band gap value of 2, 3 and 4 at.% Al-doped films sprayed at different temperatures varied from 3.32 to 3.46 eV. Hall studies were carried out to analyze resistivity, mobility and carrier concentration of the films. AZO films deposited at different substrate temperatures and at various Al/Zn ratios showed resistivity ranging from 0.12 to 1.0 x 10{sup -2} {Omega} cm. Mobility value was {approx}5 cm{sup 2}/V s and carrier concentration value was {approx}7.7 x 10{sup 19} cm{sup -3}. Minimum electrical resistivity was obtained for the 3 at.% Al-doped film sprayed at 475 deg. C and its value was 1.0 x 10{sup -2} {Omega} cm with film thickness of 602 nm. The electrical conductivity of ZnO films was improved by aluminium doping.
Intrinsically conductive polymer thin film piezoresistors

DEFF Research Database (Denmark)

Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

2008-01-01

We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...
The structural and material properties of Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Ya-Fen; Hsu, Hung-Pin [Department of Electronic Engineering, Ming Chi University of Technology, 84 Gongzhuan Rd., New Taipei City 243 (China); Wang, Jen-Cheng; Chen, Hui-Ying [Department of Electronic Engineering, Chang Gung University, 259 Wenhwa 1st Rd., Taoyuan 333 (China)

2012-06-15

We report on the structural and material properties of Cu-poor CuIn{sub 1-x}Ga{sub x} Se{sub 2} (CIGS) thin films with different gallium contents grown using the co-evaporation technique. Temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction measurements were performed. The PL emission peaks observed around 1.0-1.2 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. In addition, the X-ray diffraction spectra of the samples are simulated using a theoretical model. From the analysis, it is found that the sample with higher gallium content exhibits smaller grain size and the microstructure size uniformity is reduced. The theoretical calculation result is consistent with the experimental results derived from the PL spectra. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Thermal conductivity model for nanoporous thin films

Science.gov (United States)

Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

2018-03-01

Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.
Photoinduced hydrophobic surface of graphene oxide thin films

International Nuclear Information System (INIS)

Zhang Xiaoyan; Song Peng; Cui Xiaoli

2012-01-01

Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.
Optical thin film deposition

International Nuclear Information System (INIS)

Macleod, H.A.

1979-01-01

The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

Optical thin films and coatings from materials to applications

CERN Document Server

Flory, Francois

2013-01-01

Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...
Sputtering materials for VLSI and thin film devices

CERN Document Server

Sarkar, Jaydeep

2010-01-01

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p
Degradation of CIGS solar cells

NARCIS (Netherlands)

Theelen, M.J.

2015-01-01

Large scale commercial introduction of CIGS photovoltaics (PV) requires modules with low costs, high efficiencies and long and predictable lifetimes. Unfortunately,knowledge about the lifetime of CIGS PV is limited, which is reflected in the results of field studies: degradation rates varying from
Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

Science.gov (United States)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.
Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

KAUST Repository

Yave, Wilfredo

2010-09-01

Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform thickness (<100 nm) is crucial. By using a tailor-made polymer and by controlling the nanofabrication conditions, we developed and manufactured defect-free ultra-thin film membranes with unmatched carbon dioxide permeances, i.e. >5 m3 (STP) m-2 h -1 bar-1. The permeances are extremely high, because the membranes are made from a CO2 philic polymer material and they are only a few tens of nanometers thin. Thus, these thin film membranes have potential application in the treatment of large gas streams under low pressure like, e.g., carbon dioxide separation from flue gas. © 2010 IOP Publishing Ltd.
Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

Directory of Open Access Journals (Sweden)

Jie Zhang

2013-01-01

Full Text Available Copper zinc tin sulfur (CZTS thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1, appropriate band gap (~1.5 eV, and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS. In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT precursors were deposited by thermal evaporation and then sulfurized in N2 + H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112 orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm, 1.714×1017 cm−3, and 3.89 cm2/(V · s, respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.
Numerical modelling of CIGS/CdS solar cell

Science.gov (United States)

Devi, Nisha; Aziz, Anver; Datta, Shouvik

2018-05-01

In this work, we design and analyze the Cu(In,Ga)Se2 (CIGS) solar cell using simulation software "Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D)". The conventional CIGS solar cell uses various layers, like intrinsic ZnO/Aluminium doped ZnO as transparent oxide, antireflection layer MgF2, and electron back reflection (EBR) layer at CIGS/Mo interface for good power conversion efficiency. We replace this conventional model by a simple model which is easy to fabricate and also reduces the cost of this cell because of use of lesser materials. The new designed model of CIGS solar cell is ITO/CIGS/OVC/CdS/Metal contact, where OVC is ordered vacancy compound. From this simple structure, even at very low illumination we are getting good results. We simulate this CIGS solar cell model by varying various physical parameters of CIGS like thickness, carrier density, band gap and temperature.
Thin film bismuth iron oxides useful for piezoelectric devices

Science.gov (United States)

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.
Tools to synthesize the learning of thin films

International Nuclear Information System (INIS)

Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

2011-01-01

After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.
Molecular simulation of freestanding amorphous nickel thin films

Energy Technology Data Exchange (ETDEWEB)

Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

2013-10-31

Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.
Resistivity of thiol-modified gold thin films

International Nuclear Information System (INIS)

Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

2014-01-01

In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography
Resistivity of thiol-modified gold thin films

Energy Technology Data Exchange (ETDEWEB)

Correa-Puerta, Jonathan [Instituto de Física, Pontificia Universidad Católica de Valparaíso, Av. Universidad 330, Curauma, Valparaíso (Chile); Del Campo, Valeria [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Henríquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Häberle, Patricio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

2014-11-03

In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography.
A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers

NARCIS (Netherlands)

Xu, M.; Wachters, A.J.H.; Van Deelen, J.; Mourad, M.C.D.; Buskens, P.J.P.

2014-01-01

We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the
Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

2017-08-15

Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.
Characterization of nanocrystalline cadmium telluride thin films ...

Indian Academy of Sciences (India)

Unknown

tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...
Photoluminescence properties of perovskite multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

2016-07-01

Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)
Optical characteristics of the thin-film scintillator detector

International Nuclear Information System (INIS)

Muga, L.; Burnsed, D.

1976-01-01

A study of the thin-film detector (TFD) was made in which various light guide and scintillator film support configurations were tested for efficiency of light coupling. Masking of selected portions of the photomultiplier (PM) tube face revealed the extent to which emitted light was received at the exposed PM surfaces. By blocking off selected areas of the scintillator film surface from direct view of the PM tube faces, a measure of the light-guiding efficiency of the film and its support could be estimated. The picture that emerges is that, as the light which is initially trapped in the thin film spreads radially outward from the ion entrance/exit point, it is scattered out of the film by minute imperfections. Optimum signals were obtained by a configuration in which the thin scintillator film was supported on a thin rectangular Celluloid frame inserted within a highly polished metal cylindrical sleeve
Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

Energy Technology Data Exchange (ETDEWEB)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.
Fractal and multifractal analysis of LiF thin film surface

International Nuclear Information System (INIS)

Yadav, R.P.; Dwivedi, S.; Mittal, A.K.; Kumar, M.; Pandey, A.C.

2012-01-01

Highlights: ► Fractal and multifractal analysis of surface morphologies of the LiF thin films. ► Complexity and roughness of the LiF thin films increases as thickness increases. ► LiF thin films are multifractal in nature. ► Strength of the multifractality increases with thickness of the film. - Abstract: Fractal and multifractal analysis is performed on the atomic force microscopy (AFM) images of the surface morphologies of the LiF thin films of thickness 10 nm, 20 nm, and 40 nm, respectively. Autocorrelation function, height–height correlation function, and two-dimensional multifractal detrended fluctuation analysis (MFDFA) are used for characterizing the surface. It is found that the interface width, average roughness, lateral correlation length, and fractal dimension of the LiF thin film increase with the thickness of the film, whereas the roughness exponent decreases with thickness. Thus, the complexity and roughness of the LiF thin films increases as thickness increases. It is also demonstrated that the LiF thin films are multifractal in nature. Strength of the multifractality increases with thickness of the film.
Preparation and characterization of vanadium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

2013-04-16

The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

Laser nanostructuring of ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

2016-06-30

Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.
Restructuring in block copolymer thin films

DEFF Research Database (Denmark)

Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

2017-01-01

Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...
Nanocoatings and ultra-thin films technologies and applications

CERN Document Server

Tiginyanu, Ion

2011-01-01

Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...
Nanosphere lithography applied to magnetic thin films

Science.gov (United States)

Gleason, Russell

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.
Investigations of vertical chemical gradients in Cu(In,Ga)S{sub 2}-thin films prepared by sulfurization of sputtered precursor layers using highly spatially resolved cathodoluminescence microscopy

Energy Technology Data Exchange (ETDEWEB)

Ribbe, Stefan; Mueller, Mathias; Bertram, Frank; Hempel, Thomas; Christen, Juergen [Institute for Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Rodriguez-Alvarez, Humberto; Lauche, Jakob; Schock, Hans-Werner [Helmholtz Center Berlin for Materials and Energy (Germany)

2012-07-01

The luminescence properties of Cu(In,Ga)S{sub 2}(CIGS)-absorber layers for thin film solar cells have been studied by highly spatially resolved cathodoluminescence (CL) at low temperature (T=5 K). In/Cu-Ga-precursors were annealed with elementary sulfur pellets in a rapid thermal process at different annealing times to represent different growth steps of the CIGS absorber layer. Spatially integral CL spectra show a dominant peak at 825 nm accompanied by a low-energy shoulder at 890 nm. Only a slight blue shift of the main peak is observed by variation of the excitation density. Investigations of cross-sections show for all samples a similar luminescence distribution. Near the molybdenum back contact distinct areas show luminescence emitting at 680-750 nm. In contrast, in upper regions of the layer a homogeneous low-energy luminescence at around 820 nm is observed which exhibits the most intensive spots on the cross-section. In local spectra we observe a change of the dominant recombination channel at the interface of these two regions.
Bandtail characteristics in InN thin films

International Nuclear Information System (INIS)

Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

2002-01-01

The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers
Thin films of mixed metal compounds

Science.gov (United States)

Mickelsen, Reid A.; Chen, Wen S.

1985-01-01

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.
Thin-Film Power Transformers

Science.gov (United States)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.
Preparation and properties of antimony thin film anode materials

Institute of Scientific and Technical Information of China (English)

SU Shufa; CAO Gaoshao; ZHAO Xinbing

2004-01-01

Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.
Magnetic damping phenomena in ferromagnetic thin-films and multilayers

Science.gov (United States)

Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

2017-11-01

Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.
Facile Growth of Cu2ZnSnS4 Thin-Film by One-Step Pulsed Hybrid Electrophoretic and Electroplating Deposition

Science.gov (United States)

Tsai, Hung-Wei; Chen, Chia-Wei; Thomas, Stuart R.; Hsu, Cheng-Hung; Tsai, Wen-Chi; Chen, Yu-Ze; Wang, Yi-Chung; Wang, Zhiming M.; Hong, Hwen-Fen; Chueh, Yu-Lun

2016-01-01

The use of costly and rare metals such as indium and gallium in Cu(In,Ga)Se2 (CIGS) based solar cells has motivated research into the use of Cu2ZnSnS4 (CZTS) as a suitable replacement due to its non-toxicity, abundance of compositional elements and excellent optical properties (1.5 eV direct band gap and absorption coefficient of ~104 cm−1). In this study, we demonstrate a one-step pulsed hybrid electrodeposition method (PHED), which combines electrophoretic and electroplating deposition to deposit uniform CZTS thin-films. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm2, 0.43 and 0.59%, respectively. PMID:26902556
Chemical vapour deposition of thin-film dielectrics

International Nuclear Information System (INIS)

Vasilev, Vladislav Yu; Repinsky, Sergei M

2005-01-01

Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.
Residual stress in spin-cast polyurethane thin films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)

2015-01-19

Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.
Simulated Thin-Film Growth and Imaging

Science.gov (United States)

Schillaci, Michael

2001-06-01

Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.
Nanostructured thin films as functional coatings

Energy Technology Data Exchange (ETDEWEB)

Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

2010-06-15

Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.
Thin film characterization by resonantly excited internal standing waves

Energy Technology Data Exchange (ETDEWEB)

Di Fonzio, S [SINCROTRONE TRIESTE, Trieste (Italy)

1996-09-01

This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.
Thin film ceramic thermocouples

Science.gov (United States)

Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

2011-01-01

A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.
Photoluminescence of electron beam evaporated CaS:Bi thin films

CERN Document Server

Smet, P F; Poelman, D R; Meirhaeghe, R L V

2003-01-01

For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.
Excimer Laser Deposition of PLZT Thin Films

National Research Council Canada - National Science Library

Petersen, GAry

1991-01-01

.... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.
Physics of thin films advances in research and development

CERN Document Server

Hass, Georg; Vossen, John L

2013-01-01

Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

1997-11-21

The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.
Field ion microscope studies on thin films

International Nuclear Information System (INIS)

Cavaleru, A.; Scortaru, A.

1976-01-01

A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)
The Structure and Stability of Molybdenum Ditelluride Thin Films

Directory of Open Access Journals (Sweden)

Zhouling Wang

2014-01-01

Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.
Characteristics of Bilayer Molybdenum Films Deposited Using RF Sputtering for Back Contact of Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Sea-Fue Wang

2014-01-01

Full Text Available Mo films prepared under a single deposition condition seldom simultaneously obtain a low resistivity and a good adhesion necessary for use in solar cells. In order to surmount the obstacle, bilayer Mo films using DC sputtering at a higher working pressure and a lower working pressure have been attempted as reported in the literature. In this study, RF sputtering with different powers in conjunction with different working pressures was explored to prepare bilayer Mo film. The first bottom layer was grown at a RF sputtering power of 30 W and a working pressure of 12 mTorr, and the second top layer was deposited at 100 W and 4.5 mTorr. The films revealed a columnar growth with a preferred orientation along the (110 plane. The bilayer Mo films reported an electrical resistivity of 6.35 × 10−5 Ω-cm and passed the Scotch tape test for adhesion to the soda-lime glass substrate, thereby qualifying the bilayer Mo films for use as back metal contacts for CIGS substrates.
Magnetic surfaces, thin films, and multilayers

International Nuclear Information System (INIS)

Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

1992-01-01

This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest
Thin films prepared from tungstate glass matrix

Energy Technology Data Exchange (ETDEWEB)

Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

2008-01-30

Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.
Improving the efficiency of copper indium gallium (Di-selenide (CIGS solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

Directory of Open Access Journals (Sweden)

M. Burghoorn

2014-12-01

Full Text Available Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-selenide (CIGS solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%. No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.
Characterization of Sucrose Thin Films for Biomedical Applications

Directory of Open Access Journals (Sweden)

S. L. Iconaru

2011-01-01

Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.
Significant questions in thin liquid film heat transfer

International Nuclear Information System (INIS)

Bankoff, S.G.

1994-01-01

Thin liquid films appear in many contexts, such as the cooling of gas turbine blade tips, rocket engines, microelectronics arrays, and hot fuel element surfaces in hypothetical nuclear reactor accidents. Apart from these direct cooling applications of thin liquid layers, thin films form a crucial element in determining the allowable heat flux limits in boiling. This is because the last stages of dryout almost invariably involve the rupture of a residual liquid film, either as a microlayer underneath the bubbles, or a thin annular layer in a high-quality burnout scenario. The destabilization of these thin films under the combined actions of shear stress, evaporation, and thermocapillary effects is quite complex. The later stages of actual rupture to form dry regions, which then expand, resulting in possible overheating, are even more complex and less well understood. However, significant progress has been made in understanding the behavior of these thin films, which are subject to competing instabilities prior to actual rupture. This will be reviewed briefly. Recent work on the advance, or recession, of contact lines will also be described briefly, and significant questions that still remain to be answered will be discussed. 68 refs., 7 figs
Novel photon management for thin-film photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

2016-11-11

The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.
Thin films as an emerging platform for drug delivery

Directory of Open Access Journals (Sweden)

Sandeep Karki

2016-10-01

Full Text Available Pharmaceutical scientists throughout the world are trying to explore thin films as a novel drug delivery tool. Thin films have been identified as an alternative approach to conventional dosage forms. The thin films are considered to be convenient to swallow, self-administrable, and fast dissolving dosage form, all of which make it as a versatile platform for drug delivery. This delivery system has been used for both systemic and local action via several routes such as oral, buccal, sublingual, ocular, and transdermal routes. The design of efficient thin films requires a comprehensive knowledge of the pharmacological and pharmaceutical properties of drugs and polymers along with an appropriate selection of manufacturing processes. Therefore, the aim of this review is to provide an overview of the critical factors affecting the formulation of thin films, including the physico-chemical properties of polymers and drugs, anatomical and physiological constraints, as well as the characterization methods and quality specifications to circumvent the difficulties associated with formulation design. It also highlights the recent trends and perspectives to develop thin film products by various companies.
Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

Energy Technology Data Exchange (ETDEWEB)

Wu, Qingliu [Department of Chemical; Shi, Bing; Bareño, Javier; Liu, Yuzi; Maroni, Victor A.; Zhai, Dengyun; Dees, Dennis W.; Lu, Wenquan

2018-01-22

Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitable in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.
Removable Thin Films used for the Abatement and Mitigation of Beryllium

International Nuclear Information System (INIS)

Lumia, M.; Gentile, C.; Creek, K.; Sandoval, R.

2003-01-01

The use of removable thin films for the abatement of hazardous particulates has many advantages. Removable thin films are designed to trap and fix particulates in the film's matrix by adhesion. Thin films can be applied to an existing contaminated area to fix and capture the particulates for removal. The nature of the removable thin films, after sufficient cure time, is such that it can typically be removed as one continuous entity. The removable thin films can be applied to almost any surface type with a high success rate of removal
Thermochemical hydrogen generation of indium oxide thin films

Directory of Open Access Journals (Sweden)

Taekyung Lim

2017-03-01

Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.
Thin Film Photovoltaic/Thermal Solar Panels

Institute of Scientific and Technical Information of China (English)

David JOHNSTON

2008-01-01

A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.
Phonon transport across nano-scale curved thin films

Energy Technology Data Exchange (ETDEWEB)

Mansoor, Saad B.; Yilbas, Bekir S., E-mail: bsyilbas@kfupm.edu.sa

2016-12-15

Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.
Phonon transport across nano-scale curved thin films

International Nuclear Information System (INIS)

Mansoor, Saad B.; Yilbas, Bekir S.

2016-01-01

Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.
Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer: a 3-D optical study.

Science.gov (United States)

Rezaei, Nasim; Isabella, Olindo; Vroon, Zeger; Zeman, Miro

2018-01-22

A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless dielectric spacer between Mo and CIGS, whose optical properties were varied. We show that such a spacer with low refractive index and proper thickness can significantly reduce absorption in Mo in the long wavelength regime and improve the device's rear reflectance, thus leading to enhanced light absorption in the CIGS layer. Therefore, we optimized a realistic two-layer MgF 2 / Al 2 O 3 dielectric spacer to exploit (i) the passivation properties of ultra-thin Al 2 O 3 on the CIGS side for potential high open-circuit voltage and (ii) the low refractive index of MgF 2 on the Mo side to reduce its optical losses. Combining our realistic spacer with optically-optimized point contacts increases the implied photocurrent density of a 750 nm-thick CIGS layer by 10% for the wavelengths between 700 and 1150 nm with respect to the reference cell. The elimination of plasmonic resonances in the new structure leads to a higher electric field magnitude at the bottom of CIGS layer and justifies the improved optical performance.
Emergent Topological Phenomena in Thin Films of Pyrochlore Iridates

Science.gov (United States)

Yang, Bohm-Jung; Nagaosa, Naoto

2014-06-01

Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.
Thermoelectric effects of amorphous Ga-Sn-O thin film

Science.gov (United States)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

Beryllium thin films for resistor applications

Science.gov (United States)

Fiet, O.

1972-01-01

Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.
XRay Study of Transfer Printed Pentacene Thin Films

International Nuclear Information System (INIS)

Shao, Y.; Solin, S. A.; Hines, D. R.; Williams, E. D.

2007-01-01

We investigated the structural properties and transfer properties of pentacene thin films fabricated by thermal deposition and transfer printing onto SiO2 and plastic substrates, respectively. The dependence of the crystallite size on the printing time, temperature and pressure were measured. The increases of crystalline size were observed when pentacene thin films were printed under specific conditions, e.g. 120 deg. C and 600 psi and can be correlated with the improvement of the field effect mobility of pentacene thin-film transistors
Macro stress mapping on thin film buckling

Energy Technology Data Exchange (ETDEWEB)

Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

2002-11-06

Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.
Theoretical investigation of the thermodynamic properties of metallic thin films

International Nuclear Information System (INIS)

Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac

2015-01-01

The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks
Theoretical investigation of the thermodynamic properties of metallic thin films

Energy Technology Data Exchange (ETDEWEB)

Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

2015-05-29

The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.
Effect of solution concentration on MEH-PPV thin films

Science.gov (United States)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.
Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

Energy Technology Data Exchange (ETDEWEB)

Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

2010-08-15

In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.
Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

Directory of Open Access Journals (Sweden)

Mohd Sabri Mohd Ghazali

2011-09-01

Full Text Available Thin and transparent films of doped cadmium sulfide (CdS were obtained on commercial glass substrates by Chemical Bath Deposition (CBD technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.
Perovskite phase thin films and method of making

Science.gov (United States)

Boyle, Timothy J.; Rodriguez, Mark A.

2000-01-01

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.
Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

Directory of Open Access Journals (Sweden)

Cui Yan

2014-01-01

Full Text Available Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47O3 (PZT thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.
Substrate-HTcS thin film interaction studies by (S)TEM

NARCIS (Netherlands)

Ramaekers, P.P.J.; Klepper, D.; Kitazawa, K.; Ishiguro, T.

1989-01-01

This paper concerns with compatibility aspects beween HTcS thin film either their substrates. The influence of substrate-thin film interaction and thin film microstructure on the superconducting properties is discussed. In this respect, data based on (S)TEM observations are presented. It is
Low-field vortex dynamics in various high-Tc thin films

Indian Academy of Sciences (India)

Abstract. We present a novel ac susceptibility technique for the study of vortex creep in supercon- ducting thin films. With this technique we study the dynamics of dilute vortices in c-axis oriented. Y-123, Hg-1212, and Tl-1212 thin films, as well as a-axis oriented Hg-1212 thin films. Results on the Hg-1212 and Tl-1212 thin ...
Atomic Structure Control of Silica Thin Films on Pt(111)

KAUST Repository

Crampton, Andrew S

2015-05-27

Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.
A novel application of the CuI thin film for preparing thin copper nanowires

International Nuclear Information System (INIS)

Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

2005-01-01

We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied
Silicon-integrated thin-film structure for electro-optic applications

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick Joseph

2000-01-01

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.
Nitrogen incorporation in sputter deposited molybdenum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

2016-03-15

In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.
Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

Science.gov (United States)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.
Optical constant of thin gold films

DEFF Research Database (Denmark)

Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

2017-01-01

The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... of the device. At the same time, metal films of different thicknesses are needed for different applications and, since these films are polycrystalline, their internal properties and surface roughness can greatly vary from one thickness to another. In this work, we study, using atomic force microscopy...
Preparation and properties of thin films treatise on materials science and technology

CERN Document Server

Tu, K N

1982-01-01

Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properti
Hall effect of K-doped superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

2013-09-15

We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

Properties of Spray Pyrolysied Copper Oxide Thin Films

Directory of Open Access Journals (Sweden)

S. S. Roy

2017-02-01

Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.
Laser-induced damage to thin film dielectric coatings

International Nuclear Information System (INIS)

Walker, T.W.

1980-01-01

The laser-induced damage thresholds of dielectric thin film coatings have been found to be more than an order of magnitude lower than the bulk material damage thresholds. Prior damage studies have been inconclusive in determining the damage mechanism which is operative in thin films. A program was conducted in which thin film damage thresholds were measured as a function of laser wavelength (1.06 μm, 0.53 μm, 0.35 μm and 0.26 μm), laser pulse length (5 and 15 nanoseconds), film materials and film thickness. The large matrix of data was compared to predictions given by avalanche ionization, multiphoton ionization and impurity theories of laser damage. When Mie absorption cross-sections and the exact thermal equations were included into the impurity theory excellent agreement with the data was found. The avalanche and multiphoton damage theories could not account for most parametric variations in the data. For example, the damage thresholds for most films increased as the film thickness decreased and only the impurity theory could account for this behavior. Other observed changes in damage threshold with changes in laser wavelength, pulse length and film material could only be adequately explained by the impurity theory. The conclusion which results from this study is that laser damage in thin film coatings results from absorbing impurities included during the deposition process
Physical Vapor Deposition of Thin Films

Science.gov (United States)

Mahan, John E.

2000-01-01

A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam
Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

Energy Technology Data Exchange (ETDEWEB)

Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

2014-09-15

The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.
Nanostructured thin films and coatings mechanical properties

CERN Document Server

2010-01-01

The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.
Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

Science.gov (United States)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.
Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

International Nuclear Information System (INIS)

Li Na; Chen Fei; Shen Qiang; Wang Chuanbin; Zhang Lianmeng

2013-01-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.
Bi-axially crumpled silver thin-film electrodes for dielectric elastomer actuators

International Nuclear Information System (INIS)

Low, Sze-Hsien; Lau, Gih-Keong

2014-01-01

Metal thin films, which have high conductivity, are much stiffer and may fracture at a much lower strain than dielectric elastomers. In order to fabricate compliant electrodes for use in dielectric elastomer actuators (DEAs), metal thin films have been formed into either zigzag patterns or corrugations, which favour bending and only allow uniaxial DEA deformations. However, biaxially compliant electrodes are desired in order to maximize generated forces of DEA. In this paper, we present crumpled metal thin-film electrodes that are biaxially compliant and have full area coverage over the dielectric elastomer. These crumpled metal thin-film electrodes are more stretchable than flat metal thin films; they remain conductive beyond 110% radial strain. Also, crumpling reduced the stiffening effect of metal thin films on the soft elastomer. As such, DEAs using crumpled metal thin-film electrodes managed to attain relatively high actuated area strains of up to 128% at 1.8 kV (102 Vμm −1 ). (paper)
Subtle Raman signals from nano-diamond and β-SiC thin films

International Nuclear Information System (INIS)

Kuntumalla, Mohan Kumar; Ojha, Harish; Srikanth, Vadali Venkata Satya Siva

2013-01-01

Micro Raman scattering experiments are carried out in pursuit of subtle but discernable signals from nano-diamond and β-SiC thin films. The thin films are synthesized using microwave plasma assisted chemical vapor deposition technique. Raman scattering experiments in conjunction with scanning electron microscopy and x-ray diffraction were carried out to extract microstructure and phase information of the above mentioned thin films. Certain subtle Raman signals have been identified in this work. In the case of nanodiamond thin films, Raman bands at ∼ 485 and ∼ 1220 cm −1 are identified. These bands have been assigned to the nanodiamond present in nanodiamond thin films. In the case of nano β-SiC thin films, optical phonons are identified using surface enhanced Raman scattering. - Highlights: ► Subtle Raman signals from nano-diamond and β-silicon carbide related thin films. ► Raman bands at ∼ 485 and ∼ 1220 cm −1 from nanodiamond thin films are identified. ► Longitudinal optical phonon from nano β-silicon carbide thin films is identified
In vitro behaviour of nanocrystalline silver-sputtered thin films

International Nuclear Information System (INIS)

Piedade, A P; Vieira, M T; Martins, A; Silva, F

2007-01-01

Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications
Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

Science.gov (United States)

Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

2017-06-23

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.
Catalytic EC′ reaction at a thin film modified electrode

International Nuclear Information System (INIS)

Gerbino, Leandro; Baruzzi, Ana M.; Iglesias, Rodrigo A.

2013-01-01

Numerical simulations of cyclic voltammograms corresponding to a catalytic EC′ reaction taking place at a thin film modified electrode are performed by way of finite difference method. Besides considering the chemical kinetic occurring inside the thin film, the model takes into account the different diffusion coefficients for each species at each of the involved phases, i.e. the thin film layer and bulk solution. The theoretical formulation is given in terms of dimensionless model parameters but a brief discussion of each of these parameters and their relationship to experimental variables is presented. Special emphasis is given to the use of working curve characteristics to quantify diffusion coefficient, homogeneous kinetic constant and thickness of the thin layer in a real system. Validation of the model is made by comparison of experimental results corresponding to the electron charge transfer of Ru(NH 3 ) 6 3+ /Ru(NH 3 ) 6 2+ hemi-couple at a thin film of a cross-linked chitosan film containing an immobilized redox dye
Room temperature ferroelectricity in continuous croconic acid thin films

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

2016-09-05

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.
Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Science.gov (United States)

Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

2018-04-01

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.
Solution processed pentacene thin films and their structural properties

International Nuclear Information System (INIS)

Tao Chunlan; Zhang Xuhui; Zhang Fujia; Liu Yiyang; Zhang Haoli

2007-01-01

The paper reported the solution process of pentacene thin films from organic solvent O-dichlorobenzene. The pentacene thin films obtained from different conditions were characterized by X-ray diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), and UV-vis spectroscopy. The result shows that the pentacene solution was successfully obtained at a minimum temperature of 40 deg. C. The optimum temperature of forming pentacene thin films was 100 deg. C
Stability of tetraphenyl butadiene thin films in liquid xenon

International Nuclear Information System (INIS)

Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.

2016-01-01

Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.
Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

2012-07-15

Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.
Molecular dynamics simulation of Cu/Au thin films under temperature gradient

International Nuclear Information System (INIS)

Li, Qibin; Peng, Xianghe; Peng, Tiefeng; Tang, Qizhong; Zhang, Xiaomin; Huang, Cheng

2015-01-01

Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.
Molecular dynamics simulation of Cu/Au thin films under temperature gradient

Energy Technology Data Exchange (ETDEWEB)

Li, Qibin, E-mail: qibinli@cqu.edu.cn [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Peng, Xianghe [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Peng, Tiefeng, E-mail: pengtiefeng@cqu.edu.cn [State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400030 (China); Tang, Qizhong [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Zhang, Xiaomin [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China); Chongqing Key Laboratory of Heterogeneous Material Mechanics, Chongqing University, Chongqing 400030 (China); Huang, Cheng [College of Aerospace Engineering, Chongqing University, Chongqing 400030 (China)

2015-12-01

Graphical abstract: Heat transportation in the thin films. - Highlights: • The coherent lattice interface is found at thin films after annealing. • The vacancies are observed clearly in the deposit thin films. • The defect and component will influence the energy transportation in the coatings. • The vacancies and lattice mismatch can enlarge the mobility of atoms. • The phonon transportation in thin films has no apparent rule. - Abstract: Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms’ movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.
CdS thin films prepared by laser assisted chemical bath deposition

International Nuclear Information System (INIS)

Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

2015-01-01

Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

CdS thin films prepared by laser assisted chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

2015-05-01

Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.
Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

Energy Technology Data Exchange (ETDEWEB)

Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

2017-08-01

Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.
The optical properties of plasma polymerized polyaniline thin films

Energy Technology Data Exchange (ETDEWEB)

Goktas, Hilal, E-mail: hilal_goktas@yahoo.com [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Demircioglu, Zahide; Sel, Kivanc [Canakkale Onsekiz Mart University, Physics Department, 17020 Canakkale (Turkey); Gunes, Taylan [Yalova University, Energy Systems Engineering Department, 77100 Yalova (Turkey); Kaya, Ismet [Canakkale Onsekiz Mart University, Chemistry Department, 17020 Canakkale (Turkey)

2013-12-02

We report herein the characterizations of polyaniline thin films synthesized using double discharge plasma system. Quartz glass substrates were coated at a pressure of 80 Pa, 19.0 kV pulsed and 1.5 kV dc potential. The substrates were located at different regions in the reactor to evaluate the influence of the position on the morphological and molecular structure of the obtained thin films. The molecular structure of the thin films was investigated by Fourier transform infrared (FTIR) and UV–visible photospectrometers (UV–vis), and the morphological studies were carried out by scanning electron microscope. The FTIR and UV–vis data revealed that the molecular structures of the synthesized thin films were in the form of leuocoemeraldine and exhibited similar structures with the films produced via chemical or electrochemical methods. The optical energy band gap values of the as-grown samples ranged from 2.5 to 3.1 eV, which indicated that these materials have potential applications in semiconductor devices. The refractive index in the transparent region (from 650 to 1000 nm) steadily decreased from 1.9 to 1.4 and the extinction coefficient was found to be on order of 10{sup −4}. The synthesized thin films showed various degrees of granular morphologies depending on the location of the substrate in the reactor. - Highlights: • Polyaniline thin films were synthesized for the first time via double discharge plasma system. • The films have similar structure to that of the chemically synthesized films. • The morphology of the films could be tuned by this technique. • These materials would have potential applications at semiconductor devices.
Polymer surfaces, interfaces and thin films

Energy Technology Data Exchange (ETDEWEB)

Stamm, M [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

1996-11-01

Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.
Polymer surfaces, interfaces and thin films

International Nuclear Information System (INIS)

Stamm, M.

1996-01-01

Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs
Flush Mounting Of Thin-Film Sensors

Science.gov (United States)

Moore, Thomas C., Sr.

1992-01-01

Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.
Solid surfaces, interfaces and thin films

CERN Document Server

Lüth, Hans

2015-01-01

This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...
Solid Surfaces, Interfaces and Thin Films

CERN Document Server

Lüth, Hans

2010-01-01

This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...
12. International conference on thin films (ICTF 12). Book of Abstract

International Nuclear Information System (INIS)

Majkova, E.

2002-09-01

The publication has been set up as a proceedings of the conference dealing with thin films production and study of their properties. The conference was focused on the following topics: (1) Advanced deposition techniques; (2) Thin Film Growth; (3) Diagnostics, Structure - Properties Relationship; (4) Mechanical Properties and Stress; (5) Protective and Functional Coatings; (6) Micropatterning and Nanostructures; (7) EUV and Soft X-Ray Multilayers; (8) Magnetic Thin Films and Multilayers; (9) Organic Thin Films; (10) Thin Films for Electronics and Optics. In this proceedings totally 157 abstracts are published of which 126 are interest for INIS
Physics of grain boundaries in polycrystalline photovoltaic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Yan, Yanfa, E-mail: yanfa.yan@utoledo.edu; Yin, Wan-Jian; Wu, Yelong; Shi, Tingting; Paudel, Naba R. [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Ohio 43606 (United States); Li, Chen [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Poplawsky, Jonathan [The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Wang, Zhiwei [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Ohio 43606 (United States); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Moseley, John; Guthrey, Harvey; Moutinho, Helio; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Pennycook, Stephen J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

2015-03-21

Thin-film solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.
Inkjet printed Cu(In,Ga)S{sub 2} nanoparticles for low-cost solar cells

Energy Technology Data Exchange (ETDEWEB)

Barbé, Jérémy, E-mail: jeremy.barbe@kaust.edu.sa; Eid, Jessica [King Abdullah University of Science and Technology, Solar and Photovoltaics Engineering Research Center (SPERC), Division of Physical Sciences and Engineering (Saudi Arabia); Ahlswede, Erik; Spiering, Stefanie; Powalla, Michael [Zentrum fur Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW) (Germany); Agrawal, Rakesh [Purdue University, School of Chemical Engineering (United States); Del Gobbo, Silvano, E-mail: silvano.delgobbo@gmail.com [King Abdullah University of Science and Technology, Solar and Photovoltaics Engineering Research Center (SPERC), Division of Physical Sciences and Engineering (Saudi Arabia)

2016-12-15

Cu(In,Ga)Se{sub 2} (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S{sub 2} (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.
Inkjet printed Cu(In,Ga)S2 nanoparticles for low-cost solar cells

KAUST Repository

Barbe, Jeremy

2016-12-13

Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.
P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

Energy Technology Data Exchange (ETDEWEB)

Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

2012-01-31

In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.
NbN thin films for superconducting radio frequency cavities

Science.gov (United States)

Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.

2012-12-01

NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.
NbN thin films for superconducting radio frequency cavities

International Nuclear Information System (INIS)

Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z

2012-01-01

NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)
Research Progress on Measurement Methods and Influence Factors of Thin-film Stress

Directory of Open Access Journals (Sweden)

MA Yibo

2018-02-01

Full Text Available With the size of thin-film electronic devices decreasing, the film stress became an important reason for the failure of thin film devices. Film stress not only affected the membrane structure, but also associated with film optics, electricity, mechanics and other properties, therefore film stress turned into one hot spot in the research field of thin-film materials. This paper reviewed the latest research progress of film stress, substrate curvature method, X-ray diffraction technique and Raman spectroscopy, several frequently used stress measuring techniques were compared and analyzed, and composition ratios of thin film, substrate types, magnetron sputtering process parameters (sputtering power, work pressure, substrate temperature and annealing etc. factors influencing thin film stress were summarized. It was found that substrate curvature method was suitable for measuring almost all kinds of thin film materials. X-ray diffraction and Raman spectroscopy were just fit for measuring materials with characteristic peaks. Nanoindentation method required extra stress-free samples as comparison experiments. During film fabrication and annealing process, film stress usually transited from compressive to tensile status, and several factors combined together could affect stress, so film stress could be reached the minimum value or even stress-free status through setting appropriate parameters. Finally, combined with film stress research status, accurate stress measurement methods for different materials as a thin-film stress research direction were introduced, and challenges in thin film detection range were pointed out.
Magnetite thin films: A simulational approach

International Nuclear Information System (INIS)

Mazo-Zuluaga, J.; Restrepo, J.

2006-01-01

In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent ν=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed
TI--CR--AL--O thin film resistors

Science.gov (United States)

Jankowski, Alan F.; Schmid, Anthony P.

2000-01-01

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.
Voltage transients in thin-film InSb Hall sensor

Directory of Open Access Journals (Sweden)

Alexey Bardin

Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.
Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

Science.gov (United States)

Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof

2015-09-01

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

Dynamic studies of nano-confined polymer thin films

Science.gov (United States)

Geng, Kun

Polymer thin films with the film thickness (h0 ) below 100 nm often exhibit physical properties different from the bulk counterparts. In order to make the best use of polymer thin films in applications, it is important to understand the physical origins of these deviations. In this dissertation, I will investigate how different factors influence dynamic properties of polymer thin films upon nano-confinement, including glass transition temperature (Tg), effective viscosity (etaeff) and self-diffusion coefficient (D ). The first part of this dissertation concerns the impacts of the molecular weight (MW) and tacticity on the Tg's of nano-confined polymer films. Previous experiments showed that the Tg of polymer films could be depressed or increased as h0 decreases. While these observations are usually attributed to the effects of the interfaces, some experiments suggested that MW's and tacticities might also play a role. To understand the effects of these factors, the Tg's of silica-based poly(alpha-methyl styrene) (PalphaMS/SiOx) and poly(methyl methacrylate) (PMMA/SiOx) thin films were studied, and the results suggested that MW's and tacticities influence Tg in nontrivial ways. The second part concerns an effort to resolve the long-standing controversy about the correlation between different dynamics of polymer thin films upon nano-confinement. Firstly, I discuss the experimental results of Tg, D and etaeff of poly(isobutyl methacrylate) films supported by silica (PiBMA/SiOx). Both T g and D were found to be independent of h 0, but etaeff decreased with decreasing h 0. Since both D and etaeff describe transport phenomena known to depend on the local friction coefficient or equivalently the local viscosity, it is questionable why D and etaeff displayed seemingly inconsistent h 0 dependencies. We envisage the different h0 dependencies to be caused by Tg, D and etaeff being different functions of the local T g's (Tg,i) or viscosities (eta i). By assuming a three
Mesoscale simulations of confined Nafion thin films

Science.gov (United States)

Vanya, P.; Sharman, J.; Elliott, J. A.

2017-12-01

The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.
Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

Energy Technology Data Exchange (ETDEWEB)

Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Xu, M. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Delft University of Technology, Optics Group, Van der Waalsweg 8, 2628 CH, Delft (Netherlands); Vroon, Z. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Zuyd Hogeschool, Nieuw Eyckholt 300, 6419 DJ, Heerlen (Netherlands); Belt, R. van de [Kriya Materials BV, Urmonderbaan 22, 6167 RD, Geleen (Netherlands); Buskens, P., E-mail: pascal.buskens@tno.nl, E-mail: buskens@dwi.rwth-aachen.de [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); DWI – Leibniz Institute for Interactive Materials, Forckenbeckstrasse 50, 52056, Aachen (Germany)

2014-12-15

Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.
Compositional ratio effect on the surface characteristics of CuZn thin films

Science.gov (United States)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.
Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

International Nuclear Information System (INIS)

Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

2011-12-01

Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.
Thermal properties and stabilities of polymer thin films

International Nuclear Information System (INIS)

Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa

2009-01-01

Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)
Liquid crystals for organic thin-film transistors

Science.gov (United States)

Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

2015-04-01

Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.
Aluminosilicate glass thin films elaborated by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Carlier, Thibault [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Saitzek, Sébastien [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Méar, François O., E-mail: francois.mear@univ-lille1.fr [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Blach, Jean-François; Ferri, Anthony [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Huvé, Marielle; Montagne, Lionel [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France)

2017-03-01

Highlights: • Successfully deposition of a glassy thin film by PLD. • A good homogeneity and stoichiometry of the coating. • Influence of the deposition temperature on the glassy thin-film structure. - Abstract: In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.
Spatially resolved photoluminescence and AFM measurements on Cu(In,Ga)Se{sub 2}-based thin film absorbers prepared with different throughput speeds

Energy Technology Data Exchange (ETDEWEB)

Meessen, Max; Neumann, Oliver; Heise, Stephan J.; Brueggemann, Rudolf; Bauer, Gottfried H. [Institut fuer Physik, Carl von Ossietzky Universitaet Oldenburg (Germany); Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

2011-07-01

We study the behavior and interdependence of quantities such as photoluminescence (PL) yield, quasi-Fermi level splitting and AFM-determined surface roughness on CIGS thin-film absorbers with different thicknesses between 0.25 and 3 {mu}m achieved by varying the throughput speed in an in-line physical vapor deposition (PVD) process. These quantities are studied on the macroscopic as well as on the microscopic scale with a resolution of approximately 1 {mu}m. It is shown that the structural sizes of the inhomogeneities of the absorber layer itself and its lateral photoluminescence properties decrease with decreasing absorber thickness. These results are compared to those on samples thinned by bromine-methanol etching. Furthermore, we show that varying the thickness of the CdS buffer layer on top of the absorber influences surface recombination and thereby PL yield and quasi-Fermi level splitting. A decrease in surface recombination at higher buffer thicknesses has to be weighed against the increase in absorption in the buffer layer, which in turn decreases carrier generation in the absorber layer.
Research progress of VO2 thin film as laser protecting material

Science.gov (United States)

Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

2018-03-01

With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.
Cellulose triacetate, thin film dielectric capacitor

Science.gov (United States)

Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

1995-01-01

Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.
Size effects in thin films

CERN Document Server

Tellier, CR; Siddall, G

1982-01-01

A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.
Magnetostrictive thin films prepared by RF sputtering

International Nuclear Information System (INIS)

Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

2005-01-01

Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates
Film-thickness dependence of structure formation in ultra-thin polymer blend films

CERN Document Server

Gutmann, J S; Stamm, M

2002-01-01

We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)
Intrinsic ZnO films fabricated by DC sputtering from oxygen-deficient targets for Cu(In,Ga)Se2 solar cell application

Institute of Scientific and Technical Information of China (English)

Chongyin Yang; DongyunWan; Zhou Wang; Fuqiang Huang

2011-01-01

Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu (In, Ga) Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.%Intrinsic zinc oxide films,normally deposited by radio frequency (RF) sputtering,are fabricated by direct current (DC) sputtering.The oxygen-deficient targets are prepared via a newly developed double crucible method.The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film.This is achieved by the widely used RF sputtering,which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells.The optimal ZnO film is used in a Cu (In,Ga) Se2 (C1GS) solar cell with a high efficiency of 11.57％.This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.High resistance transparent intrinsic zinc oxide (i-ZnO)thin film has been widely nsed as the front electrode in transparent electronics and photovoltaic devices because of its low cost and nontoxicity.Owing to its unique characteristics of high transparency and adjustable resistivity in a certain range,the use of i-ZnO thin films as diffusion barrier layers of a-Si/μc-Si,CdTe,and CIGS thin-film solar cells has been advantageous
Visualizing Nanoscopic Topography and Patterns in Freely Standing Thin Films

Science.gov (United States)

Yilixiati, Subinuer; Zhang, Yiran; Pearsall, Collin; Sharma, Vivek

Thin liquid films containing micelles, nanoparticles, polyelectrolyte-surfactant complexes and smectic liquid crystals undergo thinning in a discontinuous, step-wise fashion. The discontinuous jumps in thickness are often characterized by quantifying changes in the intensity of reflected monochromatic light, modulated by thin film interference from a region of interest. Stratifying thin films exhibit a mosaic pattern in reflected white light microscopy, attributed to the coexistence of domains with various thicknesses, separated by steps. Using Interferometry Digital Imaging Optical Microscopy (IDIOM) protocols developed in the course of this study, we spatially resolve for the first time, the landscape of stratifying freestanding thin films. In particular, for thin films containing micelles of sodium dodecyl sulfate (SDS), discontinuous, thickness transitions with concentration-dependent steps of 5-25 nm are visualized and analyzed using IDIOM protocols. We distinguish nanoscopic rims, mesas and craters and show that the non-flat features are sculpted by oscillatory, periodic, supramolecular structural forces that arise in confined fluids
Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki Yeon; Lee, Jeong Soo

2008-02-15

This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.
High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

International Nuclear Information System (INIS)

Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

2011-01-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.
High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

Science.gov (United States)

Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

2011-10-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.
Ultra-thin zirconia films on Zr-alloys

Energy Technology Data Exchange (ETDEWEB)

Choi, Joong Il Jake; Mayr-Schmoelzer, Wernfried; Mittendorfer, Florian; Redinger, Josef; Diebold, Ulrike; Schmid, Michael [Institute of Applied Physics, Vienna University of Technology (Austria); Li, Hao; Rupprechter, Guenther [Institute of Materials Chemistry, Vienna University of Technology (Austria)

2014-07-01

Zirconia ultra-thin films have been prepared by oxidation of Pt{sub 3}Zr(0001) and showed a structure equivalent to (111) of cubic zirconia. Following previous work, we have prepared ultra-thin zirconia by oxidation of a different alloy, Pd{sub 3}Zr(0001), which resulted in a similar structure with a slightly different lattice parameter, 351.2 ±0.4 pm. Unlike the oxide on Pt{sub 3}Zr, where Zr of the oxide binds to Pt in the substrate, here the oxide binds to substrate Zr via oxygen. This causes stronger distortion of the oxide structure, i.e. a stronger buckling of Zr in the oxide. After additional oxidation of ZrO{sub 2}/Pt{sub 3}Zr, a different ultra-thin zirconia phase is observed. A preliminary structure model for this film is based on (113)-oriented cubic zirconia. 3D oxide clusters are also present after growing ultra-thin zirconia films. They occur at the step edges, and the density is higher on Pd{sub 3}Zr. These clusters also appear on terraces after additional oxidation. XPS reveals different core level shifts of the oxide films, bulk, and oxide clusters.

Highly coercive thin-film nanostructures

International Nuclear Information System (INIS)

Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

2005-01-01

The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets
Structural characterization of vacuum evaporated ZnSe thin films

Indian Academy of Sciences (India)

The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...
Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

2008-07-01

Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.
Preparation and layer-by-layer solution deposition of Cu(In,GaO2 nanoparticles with conversion to Cu(In,GaS2 films.

Directory of Open Access Journals (Sweden)

Walter J Dressick

Full Text Available We present a method of Cu(In,GaS2 (CIGS thin film formation via conversion of layer-by-layer (LbL assembled Cu-In-Ga oxide (CIGO nanoparticles and polyelectrolytes. CIGO nanoparticles were created via a novel flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH, and dispersed in aqueous solution. Multilayer films were assembled by alternately dipping quartz, Si, and/or Mo substrates into a solution of either polydopamine (PDA or polystyrenesulfonate (PSS and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. PSS/CIGO-PAH films were found to be inadequate due to weak adhesion to the Si and Mo substrates, excessive particle diffusion during sulfurization, and mechanical softness ill-suited to further processing. PDA/CIGO-PAH films, in contrast, were more mechanically robust and more tolerant of high temperature processing. After LbL deposition, films were oxidized to remove polymer and sulfurized at high temperature under flowing hydrogen sulfide to convert CIGO to CIGS. Complete film conversion from the oxide to the sulfide is confirmed by X-ray diffraction characterization.
Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

Directory of Open Access Journals (Sweden)

Marco Laurenti

2018-02-01

Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.
The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

Science.gov (United States)

Harris Odum, Nicole Latrice

Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.
Evaluation of residual stress in sputtered tantalum thin-film

Energy Technology Data Exchange (ETDEWEB)

Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

2016-05-15

Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.
Optical and electrical properties of chemical bath deposited cobalt sulphide thin films

Energy Technology Data Exchange (ETDEWEB)

Govindasamy, Geetha [R& D Centre, Bharathiar University, Coimbatore (India); Murugasen, Priya, E-mail: priyamurugasen15@gmail.com [Department of Physics, Saveetha Engineering, Chennai, Tamil Nadu (India); Sagadevan, Suresh [Department of Physics, AMET University, Chennai, Tamil Nadu (India)

2017-01-15

Cobalt sulphide (CoS) thin films were synthesized using the Chemical Bath Deposition (CBD) technique. X-ray diffraction (XRD) analysis was used to study the structure and the crystallite size of CoS thin film. Scanning Electron Microscope (SEM) studies reveal the surface morphology of these films. The optical properties of the CoS thin films were determined using UV-Visible absorption spectrum. The optical band gap of the thin films was found to be 1.6 eV. Optical constants such as the refractive index, the extinction coefficient and the electric susceptibility were determined. The dielectric studies were carried out at different frequencies and at different temperatures for the prepared CoS thin films. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the thin films were determined. The AC electrical conductivity measurement was also carried out for the thin films. The activation energy was determined by using DC electrical conductivity measurement. (author)
Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

Science.gov (United States)

Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

2013-03-01

Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.
Processing of thin SU-8 films

International Nuclear Information System (INIS)

Keller, Stephan; Blagoi, Gabriela; Lillemose, Michael; Haefliger, Daniel; Boisen, Anja

2008-01-01

This paper summarizes the results of the process optimization for SU-8 films with thicknesses ≤5 µm. The influence of soft-bake conditions, exposure dose and post-exposure-bake parameters on residual film stress, structural stability and lithographic resolution was investigated. Conventionally, the SU-8 is soft-baked after spin coating to remove the solvent. After the exposure, a post-exposure bake at a high temperature T PEB ≥ 90 °C is required to cross-link the resist. However, for thin SU-8 films this often results in cracking or delamination due to residual film stress. The approach of the process optimization is to keep a considerable amount of the solvent in the SU-8 before exposure to facilitate photo-acid diffusion and to increase the mobility of the monomers. The experiments demonstrate that a replacement of the soft-bake by a short solvent evaporation time at ambient temperature allows cross-linking of the thin SU-8 films even at a low T PEB = 50 °C. Fourier-transform infrared spectroscopy is used to confirm the increased cross-linking density. The low thermal stress due to the reduced T PEB and the improved structural stability result in crack-free structures and solve the issue of delamination. The knowledge of the influence of different processing parameters on the responses allows the design of optimized processes for thin SU-8 films depending on the specific application
Altering properties of cerium oxide thin films by Rh doping

International Nuclear Information System (INIS)

Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

2015-01-01

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties
Magnon dispersion in thin magnetic films

International Nuclear Information System (INIS)

Balashov, T; Wulfhekel, W; Buczek, P; Sandratskii, L; Ernst, A

2014-01-01

Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu 3 Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations. (paper)
Magnon dispersion in thin magnetic films.

Science.gov (United States)

Balashov, T; Buczek, P; Sandratskii, L; Ernst, A; Wulfhekel, W

2014-10-01

Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu3Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations.
Thin film description by wavelet coefficients statistics

Czech Academy of Sciences Publication Activity Database

Boldyš, Jiří; Hrach, R.

2005-01-01

Roč. 55, č. 1 (2005), s. 55-64 ISSN 0011-4626 Grant - others:GA UK(CZ) 173/2003 Institutional research plan: CEZ:AV0Z10750506 Keywords : thin films * wavelet transform * descriptors * histogram model Subject RIV: BD - Theory of Information Impact factor: 0.360, year: 2005 http://library.utia.cas.cz/separaty/2009/ZOI/boldys-thin film description by wavelet coefficients statistics .pdf
In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Duy Phong Pham

2014-01-01

Full Text Available Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codoped in ZnO film (IGZO to improve the film optoelectronic properties. A wide range of Ga and In contents in sputtering targets was explored to find optimum optical and electrical properties of deposited films. The results show that an appropriate combination of In and Ga atoms in ZnO material, followed by in-air thermal annealing process, can enhance the crystallization, conductivity, and transmittance of IGZO thin films, which can be well used as front-contact electrodes in thin film silicon solar cells.
Large Area Thin Film Silicon: Synergy between Displays and Solar Cells

NARCIS (Netherlands)

Schropp, R.E.I.

2012-01-01

Thin-film silicon technology has changed our society, owing to the rapid advance of its two major application fields in communication (thin-film displays) and sustainable energy (thin-film solar cells). Throughout its development, advances in these application fields have always benefitted each
Cell adhesion to cathodic arc plasma deposited CrAlSiN thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Sun Kyu, E-mail: skim@ulsan.ac.kr [School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Pham, Vuong-Hung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Chong-Hyun [Department of Food Science, Cornell University, Ithaca, NY 14853 (United States)

2012-07-01

Osteoblast cell response (cell adhesion, actin cytoskeleton and focal contact adhesion as well as cell proliferation) to CrN, CrAlSiN and Ti thin films was evaluated in vitro. Cell adhesion and actin stress fibers organization depended on the film composition significantly. Immunofluorescent staining of vinculin in osteoblast cells showed good focal contact adhesion on the CrAlSiN and Ti thin films but not on the CrN thin films. Cell proliferation was significantly greater on the CrAlSiN thin films as well as on Ti thin films than on the CrN thin films.
Photovoltaics: tests of thin-film technologies. 6 thin-film technologies in 3 different BIPV modes compared in a real outdoor performance test; PV-ThinFilmTest. 6 thin-film technologies in 3 different BIPV modes compared in a real outdoor performance test

Energy Technology Data Exchange (ETDEWEB)

Frei, R.; Meier, Ch.

2005-07-01

This final report for the Swiss Federal Office of Energy (SFOE) presents the results of a comparison made between six types of thin-film, building-integrated photovoltaic (BIPV) technologies used in three different modes of building-integration. More than 450 thin-film modules including amorphous silicon and CIS technologies were monitored. Each type of module was installed in three different modes: inclined (20{sup o}), flat with free back air flow, and flat with thermal back insulation. The performance of these commercially available thin-film BIPV systems was monitored using an extensive monitoring program. Additionally, three mono-crystalline PV arrays allowed direct comparison of the technologies. The results of the monitoring work are presented and further work to be done is discussed, including the monitoring of possible long-term degradation.
Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.
Flexible thin film magnetoimpedance sensors

International Nuclear Information System (INIS)

Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

2016-01-01

Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

Flexible thin film magnetoimpedance sensors

Energy Technology Data Exchange (ETDEWEB)

Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

2016-10-01

Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.
Optimized grid design for thin film solar panels

NARCIS (Netherlands)

Deelen, J. van; Klerk, L.; Barink, M.

2014-01-01

There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid
Thermal stability of gold-PS nanocomposites thin films

Indian Academy of Sciences (India)

Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...
The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0 ≤ x ≤ 1) amorphous semiconductor thin films

Science.gov (United States)

Karatay, Ahmet; Küçüköz, Betül; Çankaya, Güven; Ates, Aytunc; Elmali, Ayhan

2017-11-01

The characterization of the CuInSe2 (CIS), CuInGaSe (CIGS) and CuGaSe2 (CGS) based semiconductor thin films are very important role for solar cell and various nonlinear optical applications. In this paper, the amorphous CuIn0.7Ga0.3(Se1-xTex)2 semiconductor thin films (0 ≤ x ≤ 1) were prepared with 60 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties and ultrafast transient characteristics were investigated by using open aperture Z-scan and ultrafast pump-probe techniques. The energy bandgap values were calculated by using linear absorption spectra. The bandgap values are found to be varying from 0.67 eV to 1.25 eV for CuIn0.7Ga0.3Te2, CuIn0.7Ga0.3Se1.6Te0.4, CuIn0.7Ga0.3Se0.4Te1.6 and CuIn0.7Ga0.3Se2 thin films. The energy bandgap values decrease with increasing telluride (Te) doping ratio in mixed CuIn0.7Ga0.3(Se1-xTex)2 films. This affects nonlinear characteristics and ultrafast dynamics of amorphous thin films. Ultrafast pump-probe experiments indicated that decreasing of bandgap values with increasing the Te amount switches from the excited state absorption signals to ultrafast bleaching signals. Open aperture Z-scan experiments show that nonlinear absorption properties enhance with decreasing bandgaps values for 65 ps pulse duration at 1064 nm. Highest nonlinear absorption coefficient was found for CuIn0.7Ga0.3Te2 thin film due to having the smallest energy bandgap.
Quantitative analysis of tear film fluorescence and discomfort during tear film instability and thinning.

Science.gov (United States)

Begley, Carolyn; Simpson, Trefford; Liu, Haixia; Salvo, Eliza; Wu, Ziwei; Bradley, Arthur; Situ, Ping

2013-04-12

The purpose of this study was to test the association between tear film fluorescence changes during tear break-up (TBU) or thinning and the concurrent ocular sensory response. Sixteen subjects kept one eye open as long as possible (MBI), indicated their discomfort level continuously, and rated ocular sensations of irritation, stinging, burning, pricking, and cooling using visual analog scales (VAS). Fluorescence of the tear film was quantified by a pixel-based analysis of the median pixel intensity (PI), TBU, and percentage of dark pixels (DarkPix) over time. A cutoff of 5% TBU was used to divide subjects into either break-up (BU) or minimal break-up (BUmin) groups. Tear film fluorescence decreased (median PI) and the percentage of TBU and DarkPix increased in all trials, with the rate significantly greater in the BU than the BUmin group (Mann-Whitney U test, P film thinning best explains decreasing tear film fluorescence during trials. This was highly correlated with increasing ocular discomfort, suggesting that both tear film thinning and TBU stimulate underlying corneal nerves, although TBU produced more rapid stimulation. Slow increases in tear film hyperosmolarity may cause the gradual increase in discomfort during slow tear film thinning, whereas the sharp increases in discomfort during TBU suggest a more complex stimulus.
Thin films for the manipulation of light

International Nuclear Information System (INIS)

Piegari, Angela; Sytchkova, Anna

2015-01-01

The manipulation of light is typically accomplished by a series of optical surfaces on which the incident beam is reflected, or through which the beam is transmitted. Thin film coatings help to modify the behavior of such surfaces for obtaining the desired result: antireflection coatings to reduce reflection losses, high-reflectance mirrors, filters to divide or combine beams of different wavelengths, and many other types. The amount of light that is transmitted or reflected depends on the optical parameters of the materials and on interference phenomena in thin-film structures. Dedicated software is available to design the proper coating for each requirement. There are several applications of optical thin films, many of them are useful in the everyday life, many others are dedicated to scientific purposes, as will be described in this paper [it
Unidirectional oxide hetero-interface thin-film diode

International Nuclear Information System (INIS)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

2015-01-01

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2 Hz < f < 10 6 Hz, providing a high feasibility for practical applications
Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.
Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

Energy Technology Data Exchange (ETDEWEB)

Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier [Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Liu, Jinxuan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Wöll, Christof, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu [Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Röse, Silvana [Preparative Macromolecular Chemistry, Institute for Chemical Technology and Polymer Chemistry (ICTP), Karlsruhe Institute of Technology (KIT), Engesserstrasse 18, 76128 Karlsruhe (Germany); Institute for Biological Interfaces (IBG), Karlsruhe Institute of Technology (KIT), Herrmann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Oberst, Vanessa [Institute of Applied Materials (IAM), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Walheim, Stefan [Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

2015-09-07

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.
Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

International Nuclear Information System (INIS)

Best, James P.; Michler, Johann; Maeder, Xavier; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Liu, Jinxuan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof; Röse, Silvana; Oberst, Vanessa; Walheim, Stefan

2015-01-01

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E ITO ≈ 96.7 GPa, E HKUST−1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices
Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

International Nuclear Information System (INIS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-01-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)
Molecular dynamics simulation about porous thin-film growth in secondary deposition

International Nuclear Information System (INIS)

Chen Huawei; Tieu, A. Kiet; Liu Qiang; Hagiwara, Ichiro; Lu Cheng

2007-01-01

The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters
Molecular dynamics simulation about porous thin-film growth in secondary deposition

Energy Technology Data Exchange (ETDEWEB)

Chen Huawei [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China) and Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)]. E-mail: chen_hua_wei@yahoo.com; Tieu, A. Kiet [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia); Liu Qiang [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China); Hagiwara, Ichiro [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo (Japan); Lu Cheng [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)

2007-07-15

The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters.
PZT Thin-Film Micro Probe Device with Dual Top Electrodes

Science.gov (United States)

Luo, Chuan

Lead zirconate titanate (PZT) thin-film actuators have been studied intensively for years because of their potential applications in many fields. In this dissertation, a PZT thin-film micro probe device is designed, fabricated, studied, and proven to be acceptable as an intracochlear acoustic actuator. The micro probe device takes the form of a cantilever with a PZT thin-film diaphragm at the tip of the probe. The tip portion of the probe will be implanted in cochlea later in animal tests to prove its feasibility in hearing rehabilitation. The contribution of the dissertation is three-fold. First, a dual top electrodes design, consisting of a center electrode and an outer electrode, is developed to improve actuation displacement of the PZT thin-film diaphragm. The improvement by the dual top electrodes design is studied via a finite element model. When the dimensions of the dual electrodes are optimized, the displacement of the PZT thin-film diaphragm increases about 30%. A PZT thin-film diaphragm with dual top electrodes is fabricated to prove the concept, and experimental results confirm the predictions from the finite element analyses. Moreover, the dual electrode design can accommodate presence of significant residual stresses in the PZT thin-film diaphragm by changing the phase difference between the two electrodes. Second, a PZT thin-film micro probe device is fabricated and tested. The fabrication process consists of PZT thin-film deposition and deep reactive ion etching (DRIE). The uniqueness of the fabrication process is an automatic dicing mechanism that allows a large number of probes to be released easily from the wafer. Moreover, the fabrication is very efficient, because the DRIE process will form the PZT thin-film diaphragm and the special dicing mechanism simultaneously. After the probes are fabricated, they are tested with various possible implantation depths (i.e., boundary conditions). Experimental results show that future implantation depths
Soft Magnetic Multilayered Thin Films for HF Applications

Science.gov (United States)

Loizos, George; Giannopoulos, George; Serletis, Christos; Maity, Tuhin; Roy, Saibal; Lupu, Nicoleta; Kijima, Hanae; Yamaguchi, Masahiro; Niarchos, Dimitris

Multilayered thin films from various soft magnetic materials were successfully prepared by magnetron sputtering in Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the films show good soft magnetic properties: magnetic coercivity of 1-10 Oe and saturation magnetization higher than 1T. The initial permeability of the films is greater than 300 and flattens up to 600 MHz. The multilayer thin film properties in combination with their easy, fast and reproducible fabrication indicate that they are potential candidates for high frequency applications.
Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

International Nuclear Information System (INIS)

Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

2015-01-01

Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm
Methods for producing thin film charge selective transport layers

Science.gov (United States)

Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

2018-01-02

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.
Direct current magnetron sputter-deposited ZnO thin films

International Nuclear Information System (INIS)

Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

2011-01-01

Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.
Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

Science.gov (United States)

Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

2016-05-04

Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.
Fluorine doped vanadium dioxide thin films for smart windows

International Nuclear Information System (INIS)

Kiri, Pragna; Warwick, Michael E.A.; Ridley, Ian; Binions, Russell

2011-01-01

Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.

Thin Film Magnetless Faraday Rotators for Compact Heterogeneous Integrated Optical Isolators (Postprint)

Science.gov (United States)

2017-06-15

AFRL-RX-WP-JA-2017-0348 THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL ISOLATORS (POSTPRINT) Dolendra Karki...Interim 9 May 2016 – 1 December 2016 4. TITLE AND SUBTITLE THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL...transfer of ultra-compact thin-film magnetless Faraday rotators to silicon photonic substrates. Thin films of magnetization latching bismuth
Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

International Nuclear Information System (INIS)

Khamseh, S.; Ghahari, M.; Araghi, H.; Faghihi Sani, M.A.

2016-01-01

W-doped VO 2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VO X -WO X -VO X ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO 2 (M) and VO 2 (B) was formed in VO X -WO X -VO X ceramic thin films. Tungsten content of VO X -WO X -VO X ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance (R sq ) of VO X -WO X -VO X ceramic thin films increased from 65 to 86 kΩ/sq. The VO X -WO X -VO X ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness. (orig.)
Voltage transients in thin-film InSb Hall sensor

Science.gov (United States)

Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey

The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.
A „Hybrid“ Thin-Film pH Sensor with Integrated Thick-Film Reference

OpenAIRE

Simonis, Anette; Krings, Thomas; Lüth, Hans; Wang, Joseph; Schöning, Michael J.

2001-01-01

A reference electrode fabricated by means of thick-film technique is deposited onto a silicon substrate and combined with a thin-film pH sensor to a Ã¢Â€ÂœhybridÃ¢Â€Â chip system. To evaluate the suitability of this combination, first investigations were carried out. The characteristics of the thin-film pH sensor were studied towards the thick-film Ag/AgCl reference electrode. Measurements were performed in the capacitance/voltage (C/V) and constant capacitance (Concap) mode for different pH ...
Electrical and optical properties of spray - deposited CdSe thin films

International Nuclear Information System (INIS)

Bedir, M.; Oeztas, M.; Bakkaloglu, O. F.

2002-01-01

The CdSe thin films were developed by using spray-deposition technique at different substrate temperatures of 380C, 400C and, 420C on the glass substrate. All spraying processes involved CdCI 2 (0.05 moles/liter) and SeO 2 (0.05 moles/liter ) and were carried out in atmospheric condition. The CdSe thin film samples were characterized using x-ray diffractometer and optical absorption measurements. The electrical properties of the thin film samples were investigated via Wander Pauw method. XRD patterns indicated that the CdSe thin film samples have a hexagonal structure. The direct band gap of the CdSe thin film samples were determined from optical absorption and spectral response measurements of 1.76 eV. The resistivity of the CdSe thin film samples were found to vary in the range from 5.8x10''5 to 7.32x10''5 Ωcm depending to the substrate temperature
Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular
Determination of magnetic properties of multilayer metallic thin films

International Nuclear Information System (INIS)

Birlikseven, C.

2000-01-01

In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the experimental results to the theoretical models, effective magnetization and angles between the ferromagnetic layers were calculated. The correspondence between magnetization and magnetoresistance was evaluated. To see the effect of anisotropic magnetoresistance in the magnetoresistance measurements, a new experimental set-up was build and measurements were taken in this set-up. A series of soft permalloy thin films were made, and temperature dependent resistivity, magnetoresistance, anisotropic magnetoresistance and magnetization measurements were taken
Electrochromic properties of nanocrystalline MoO3 thin films

International Nuclear Information System (INIS)

Hsu, C.-S.; Chan, C.-C.; Huang, H.-T.; Peng, C.-H.; Hsu, W.-C.

2008-01-01

Electrochromic MoO 3 thin films were prepared by a sol-gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO 3 thin films. The effects of annealing temperatures ranging from 100 o C to 500 o C were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO 4 /propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO 3 thin films heat-treated at 350 o C varied from 80% to 35% at λ = 550 nm (ΔT = ∼ 45%) and from 86% to 21% at λ ≥ 700 nm (ΔT = ∼ 65%) after coloration. Films heat-treated at 350 deg. C exhibited the best electrochromic properties in the present study
Electrical properties of epitaxially grown VOx thin films

NARCIS (Netherlands)

Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

2003-01-01

High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower
Thin film preparation of semiconducting iron pyrite

Science.gov (United States)

Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

1990-08-01

Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.
Synthesis of nanocrystalline TiO2 thin films by liquid phase ...

Indian Academy of Sciences (India)

WINTEC

goes degradation efficiently in presence of TiO2 thin films by exposing its aqueous solution to .... Figure 6. Photodegradation of IGOR organic dye by a. bare TiO2 thin film and b. ... Meng L-J and Dos Santos M P 1993 Thin Solid Films 226 22.
Review of thin film superconductivity

International Nuclear Information System (INIS)

Kihlstrom, K.E.

1989-01-01

Advances in thin film superconductivity are critical to the success of many proposed applications. The authors review several of the prominent techniques currently used to produce thin films of the high temperature superconductors including electron beam co-deposition, sputtering (both multiple and composite source configurations) and laser ablation. The authors look at the relevant parameters for each and evaluate the advantages and disadvantages of each technique. In addition, promising work on in situ oxidation is discussed. Also addressed are efforts to find optimum substrate materials and substrate buffer layers for various applications. The current state of the art for T c , J c and H c2 is presented for the yttrium, bismuth, and thallium compounds
Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

Directory of Open Access Journals (Sweden)

Gyu-bong Cho

2014-01-01

Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.
Proceedings of the international conference on thin films and applications: book of abstracts

International Nuclear Information System (INIS)

2013-01-01

In the era of miniaturization, the role of thin films is highly significant to achieve smaller devices with higher speed especially in new generation of integrated circuits, sensors, flat panel displays, Micro-Electro-Mechanical Systems (MEMS), biomedical devices, optical instruments and microwave communications. Thin films as a nano-scale dimensional system have great importance to many challenging applications. Biological coatings, clean energy, ferroelectric and piezoelectric thin films, ion beam thin films, magnetic thin films, nanostructured and nano composite coatings, NEMS, sensors, thin film preparation and characterization are the topics covered in this symposium. Papers relevant to INIS are indexed separately
Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

Science.gov (United States)

Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

2013-05-22

Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.
Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.
Synthesis and characterization of spin-coated ZnS thin films

Science.gov (United States)

Zaman, M. Burhanuz; Chandel, Tarun; Dehury, Kshetramohan; Rajaram, P.

2018-05-01

In this paper, we report synthesis of ZnS thin films using a sol-gel method. A unique aprotic solvent, dimethlysulphoxide (DMSO) has been used to obtain a homogeneous ZnS gel. Zinc acetate and thiourea were used as the precursor sources for Zn and S, respectively, to deposit nanocrystalline ZnS thin films. Optical, structural and morphological properties of the films were studied. Optical studies reveal high transmittance of the samples over the entire visible region. The energy band gap (Eg) for the ZnS thin films is found to be about 3.6 eV which matches with that of bulk ZnS. The interference fringes in transmissions spectrum show the high quality of synthesized samples. Strong photoluminescence peak in the UV region makes the films suitable for optoelectronic applications. X-ray diffraction studies reveal that sol-gel derived ZnS thin films are polycrystalline in nature with hexagonal structure. SEM studies confirmed that the ZnS films show smooth and uniform grains morphology having size in 20-25 nm range. The EDAX studies confirmed that the films are nearly stoichiometric.
Critical phenomena in Ising-type thin films by Monte Carlo study

International Nuclear Information System (INIS)

Masrour, R.; Jabar, A.; Benyoussef, A.; Hamedoun, M.

2016-01-01

The magnetic properties of ferrimagnetic spin-2 and 3/2 Ising-typed thin films are studied by Monte Carlo simulation. The critical temperature is obtained for different values of thickness of the thin film and for different exchange interactions. The total magnetization has been determined for different values of exchange interactions in surface and in bulk and different temperatures. The magnetic hysteresis cycle is obtained for different values of exchange interactions ferro and antiferromagnetic in the surface and in the bulk and for different values of temperatures for a fixed size of the film thickness. The coercive field increase with increasing the film thickness. - Highlights: • The magnetic properties of thin films are studied by Monte Carlo simulation. • The critical temperature is obtained for different values of thickness of thin film. • The magnetic hysteresis cycle is obtained in the surface and in the bulk. • The coercive field increase with increasing the thin film thickness.
Critical phenomena in Ising-type thin films by Monte Carlo study

Energy Technology Data Exchange (ETDEWEB)

Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, 63, 46000 Safi (Morocco); Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E.URAC 12, Université Mohammed V, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Jabar, A. [Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E.URAC 12, Université Mohammed V, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Benyoussef, A. [Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E.URAC 12, Université Mohammed V, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco); Hamedoun, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco)

2016-04-01

The magnetic properties of ferrimagnetic spin-2 and 3/2 Ising-typed thin films are studied by Monte Carlo simulation. The critical temperature is obtained for different values of thickness of the thin film and for different exchange interactions. The total magnetization has been determined for different values of exchange interactions in surface and in bulk and different temperatures. The magnetic hysteresis cycle is obtained for different values of exchange interactions ferro and antiferromagnetic in the surface and in the bulk and for different values of temperatures for a fixed size of the film thickness. The coercive field increase with increasing the film thickness. - Highlights: • The magnetic properties of thin films are studied by Monte Carlo simulation. • The critical temperature is obtained for different values of thickness of thin film. • The magnetic hysteresis cycle is obtained in the surface and in the bulk. • The coercive field increase with increasing the thin film thickness.
Improvement of physical properties of ZnO thin films by tellurium doping

Energy Technology Data Exchange (ETDEWEB)

Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

2014-11-01

Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

Study on the Preparation and Properties of Colored Iron Oxide Thin Films

International Nuclear Information System (INIS)

Zhao Xianhui; Li Changhong; Liu Qiuping; He Junjing; Wang Hai; Liang Song; Duan Yandong; Liu Su

2013-01-01

Colored iron oxide thin films were prepared using Sol-gel technique. The raw materials were tetraethyl orthosilicate (TEOS), etoh ehanol (EtOH), iron nitrate, and de-ionized water. Various properties were measured and analysed, including the colour of thin films, surface topography, UV-Visible spectra, corrosion resistance and hydrophobicity. To understand how these properties influenced the structural and optical properties of Fe 2 O 3 thin films, Scanning Electron Microscope (SEM), UV Spectrophotometer and other facilities were employed. Many parameters influence the performance of thin films, such as film layers, added H 2 O content, and the amount of polydimethylsiloxane (PDMS). When the volume ratio of TEOS, EtOH and H 2 O was 15: 13: 1, the quality of Fe(NO 3 ) 3 ·9H 2 O was 6g, and pH value was 3, reddish and uniform Fe 2 O 3 thin films with excellent properties were produced. Obtained thin films possessed corrosion resistance in hydrochloric acid with pH=l and the absorption edge wavelength was ∼350.2nm. Different H 2 O contents could result in different morphologies of Fe 2 O 3 nanoparticles. When 1.5 ml PDMS was added into the Sol, thin films possessed hydrophobiliry without dropping. Coating with different layers, thin films appeared different morphologies. Meanwhile, with the increment of film layers, the absorbance increased gradually.
Co-sputtered ZnO:Si thin films as transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

2012-12-01

Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.
Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films

International Nuclear Information System (INIS)

Tsay, Chien-Yie; Huang, Tzu-Teng

2013-01-01

Indium gallium zinc oxide (IGZO) transparent semiconductor thin films were prepared by KrF excimer laser annealing of sol–gel derived precursor films. Each as-coated film was dried at 150 °C in air and then annealed using excimer laser irradiation. The influence of laser irradiation energy density on surface conditions, optical transmittances, and electrical properties of laser annealed IGZO thin films were investigated, and the physical properties of the excimer laser annealed (ELA) and the thermally annealed (TA) thin films were compared. Experimental results showed that two kinds of surface morphology resulted from excimer laser annealing. Irradiation with a lower energy density (≤250 mJ cm −2 ) produced wavy and irregular surfaces, while irradiation with a higher energy density (≥350 mJ cm −2 ) produced flat and dense surfaces consisting of uniform nano-sized amorphous particles. The explanation for the differences in surface features and film quality is that using laser irradiation energy to form IGZO thin films improves the film density and removes organic constituents. The dried IGZO sol–gel films irradiated with a laser energy density of 350 mJ/cm 2 had the best physical properties of all the ELA IGZO thin films. The mean resistivity of the ELA 350 thin films (4.48 × 10 3 Ω cm) was lower than that of TA thin films (1.39 × 10 4 Ω cm), and the average optical transmittance in the visible range (90.2%) of the ELA 350 thin films was slightly higher than that of TA thin films (89.7%). - Highlights: • IGZO semiconductor films were prepared by laser annealing of sol–gel derived films. • Surface roughness and resistivity of ELA samples were affected by energy density. • The ELA 350 IGZO film exhibited the best properties among all of ELA IGZO films. • Transmittance and resistivity of ELA 350 films are greater than those of TA films
Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films

Energy Technology Data Exchange (ETDEWEB)

Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Huang, Tzu-Teng

2013-06-15

Indium gallium zinc oxide (IGZO) transparent semiconductor thin films were prepared by KrF excimer laser annealing of sol–gel derived precursor films. Each as-coated film was dried at 150 °C in air and then annealed using excimer laser irradiation. The influence of laser irradiation energy density on surface conditions, optical transmittances, and electrical properties of laser annealed IGZO thin films were investigated, and the physical properties of the excimer laser annealed (ELA) and the thermally annealed (TA) thin films were compared. Experimental results showed that two kinds of surface morphology resulted from excimer laser annealing. Irradiation with a lower energy density (≤250 mJ cm{sup −2}) produced wavy and irregular surfaces, while irradiation with a higher energy density (≥350 mJ cm{sup −2}) produced flat and dense surfaces consisting of uniform nano-sized amorphous particles. The explanation for the differences in surface features and film quality is that using laser irradiation energy to form IGZO thin films improves the film density and removes organic constituents. The dried IGZO sol–gel films irradiated with a laser energy density of 350 mJ/cm{sup 2} had the best physical properties of all the ELA IGZO thin films. The mean resistivity of the ELA 350 thin films (4.48 × 10{sup 3} Ω cm) was lower than that of TA thin films (1.39 × 10{sup 4} Ω cm), and the average optical transmittance in the visible range (90.2%) of the ELA 350 thin films was slightly higher than that of TA thin films (89.7%). - Highlights: • IGZO semiconductor films were prepared by laser annealing of sol–gel derived films. • Surface roughness and resistivity of ELA samples were affected by energy density. • The ELA 350 IGZO film exhibited the best properties among all of ELA IGZO films. • Transmittance and resistivity of ELA 350 films are greater than those of TA films.
Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

CERN Document Server

Jacob, W; Schwarz-Selinger, T

2000-01-01

The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...
Vibration welding system with thin film sensor

Science.gov (United States)

Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

2014-03-18

A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.
Glass transition and thermal expansivity of polystyrene thin films

International Nuclear Information System (INIS)

Inoue, R.; Kanaya, T.; Miyazaki, T.; Nishida, K.; Tsukushi, I.; Shibata, K.

2006-01-01

We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T g and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements
Glass transition and thermal expansivity of polystyrene thin films

Energy Technology Data Exchange (ETDEWEB)

Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

2006-12-20

We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.
Optical modeling and simulation of thin-film photovoltaic devices

CERN Document Server

Krc, Janez

2013-01-01

In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models
Investigation of phase transformation for ferrite–austenite structure in stainless steel thin films

Energy Technology Data Exchange (ETDEWEB)

Merakeb, Noureddine [Laboratory of Physical Metallurgy and Property of Materials (LM2PM), Metallurgy and Materials Engineering Department, Badji Mokhtar University, P.O. Box 12, Annaba 23000 (Algeria); Messai, Amel [Laboratoire d' Ingénierie et Sciences des Matériaux Avancés (ISMA), Institut des Sciences et Technologie, Abbès Laghrour University, Khenchela 40000 (Algeria); Ayesh, Ahmad I., E-mail: ayesh@qu.edu.qa [Department of Mathematics, Statistics and Physics, Qatar University, Doha (Qatar)

2016-05-01

In this work we report on phase transformation of 304 stainless steel thin films due to heat treatment. Ex-situ annealing was applied for evaporated 304 stainless steel thin films inside an ultra-high vacuum chamber with a pressure of 3 × 10{sup −7} Pa at temperatures of 500 °C and 600 °C. The structure of thin films was studied by X-ray diffraction (XRD) and conversion electron Mössbauer spectroscopy (CEMS) techniques. The results revealed a transformation from α-phase that exhibits a body-centered cubic structure (BCC) to γ-phase that exhibits a face-centered cubic (FCC) due to annealing. In addition, the percentage of γ-phase structure increased with the increase of annealing temperature. Annealing thin films increased the crystal size of both phases (α and γ), however, the increase was nonlinear. The results also showed that phase transformation was produced by recrystallization of α and γ crystals with a temporal evolution at each annealing temperature. The texture degree of thin films was investigated by XRD rocking curve method, while residual stress was evaluated using curvature method. - Highlights: • Stainless steel thin films were fabricated by thermal evaporation on quartz. • Alpha to gamma phase transformation of thin films was investigated. • Annealing of thin films reduces disruption in crystal lattice. • The stress of as-grown thin films was independent on the thin film thickness. • The stress of the thin films was reduced due to annealing.
Impact of X-ray irradiation on PMMA thin films

International Nuclear Information System (INIS)

Iqbal, Saman; Rafique, Muhammad Shahid; Anjum, Safia; Hayat, Asma; Iqbal, Nida

2012-01-01

Highlights: ► PMMA thin films were deposited at 300 °C and 500 °C using PLD technique. ► These films were irradiated with different fluence of laser produced X-rays. ► Irradiation affects the ordered packing as well as surface morphology of film. ► Hardness of film decreases up to certain value of X-ray fluence. ► Absorption in UV–visible range exhibits a non linear behavior. - Abstract: The objective of this project is to explore the effect of X-ray irradiation of thin polymeric films deposited at various substrate temperatures. pulsed laser deposition (PLD) technique is used for the deposition of PMMA thin films on glass substrate at 300 °C and 500 °C. These films have been irradiated with various X-rays fluences ranging from 2.56 to 5.76 mJ cm −2 . Characterization of the films (before and after the irradiation) is done with help of X-ray Diffractrometer, Optical Microscope, Vickers hardness tester and UV–vis spectroscopy techniques. From XRD data, it is revealed that ordered packing has been improved for the films deposited at 300 °C. However after irradiation the films exhibited the amorphous behavior regardless of the X-ray fluence. Film deposited at 500 °C shows amorphous structure before and after irradiation. Hardness and particle size of thin film have also increased with the increasing substrate temperature. However, the irradiation has reverse effect i.e. the particle size as well as the hardness has reduced. Irradiation has also enhanced the absorption in the UV–visible region.
Flexible magnetic thin films and devices

Science.gov (United States)

Sheng, Ping; Wang, Baomin; Li, Runwei

2018-01-01

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).
Thin-film Rechargeable Lithium Batteries for Implantable Devices

Science.gov (United States)

Bates, J. B.; Dudney, N. J.

1997-05-01

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.
Photoelectrochemical water splitting for hydrogen production using combination of CIGS2 solar cell and RuO2 photocatalyst

International Nuclear Information System (INIS)

Dhere, Neelkanth G.; Jahagirdar, Anant H.

2005-01-01

This paper presents the development of photoelectrochemical (PEC) cell for water splitting setup using multiple band gap combination of CuIn 1-x Ga x S 2 (CIGS2) thin-film photovoltaic (PV) cell and ruthenium oxide (RuO 2 ) photocatalyst. FSEC PV Materials Lab has developed a PEC setup consisting of two illuminated CIGS2 cells, a ruthenium oxide (RuO 2 ) anode deposited on titanium sheet for oxygen evolution and a platinum foil cathode for hydrogen evolution. With this combination, a PEC efficiency of 4.29% has been achieved. This paper also presents the research aimed at further improvements in the PEC efficiency by employing highly efficient photoanode that can be illuminated by photons not absorbed at the PV cell and by increasing the concentration of electrolyte solution (pH 10). The former will be achieved by employing a p-type transparent and conducting layer at the back of PV cell to transmit the unabsorbed photons, and the latter will reduce the resistance offered by the electrolyte. Concentration of the electrolyte was increased by five times, and the I-V characteristics of both RuO 2 and RuS 2 were measured with and without illumination. The results indicate that PEC efficiencies of over 9% can be achieved using RuS 2 with illumination and five times concentrated pH 10 solution instead of pH 10 with normal concentration
ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing

International Nuclear Information System (INIS)

Liu, Y.; Li, Y.; Zeng, H.

2013-01-01

ZnO-based transparent conductive thin films have attracted much attention as a promising substitute material to the currently used indium-tin-oxide thin films in transparent electrode applications. However, the detailed function of the dopants, acting on the electrical and optical properties of ZnO-based transparent conductive thin films, is not clear yet, which has limited the development and practical applications of ZnO transparent conductive thin films. Growth conditions such as substrate type, growth temperature, and ambient atmosphere all play important roles in structural, electrical, and optical properties of films. This paper takes a panoramic view on properties of ZnO thin films and reviews the very recent works on new, efficient, low-temperature, and high-speed deposition technologies. In addition, we highlighted the methods of producing ZnO-based transparent conductive film on flexible substrate, one of the most promising and rapidly emerging research areas. As optimum-processing-parameter conditions are being obtained and their influencing mechanism is becoming clear, we can see that there will be a promising future for ZnO-based transparent conductive films.
Critical behavior of ferromagnetic Ising thin films

International Nuclear Information System (INIS)

Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

2006-01-01

In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films
Superconducting oxypnictide thin films

Energy Technology Data Exchange (ETDEWEB)

Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

2012-07-01

We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.
Thin Film Solar Cells and their Optical Properties

Directory of Open Access Journals (Sweden)

Stanislav Jurecka

2006-01-01

Full Text Available In this work we report on the optical parameters of the semiconductor thin film for solar cell applications determination. The method is based on the dynamical modeling of the spectral reflectance function combined with the stochastic optimization of the initial reflectance model estimation. The spectral dependency of the thin film optical parameters computations is based on the optical transitions modeling. The combination of the dynamical modeling and the stochastic optimization of the initial theoretical model estimation enable comfortable analysis of the spectral dependencies of the optical parameters and incorporation of the microstructure effects on the solar cell properties. The results of the optical parameters ofthe i-a-Si thin film determination are presented.
Microwave Josephson generation in thin film superconducting bridges

International Nuclear Information System (INIS)

Gubankov, V.N.; Koshelets, V.P.; Ovsyannikov, G.A.

1975-01-01

Thin-film bridges have some advantage over other types of superconducting weak links: good definition of electromagnetic parameters and of weak region geometry. Up to now Josephson properties of bridges have been investigated by using indirect methods (the effect of magnetic field on the critical current I 0 , the bridge behavior in a microwave field, etc.). Direct experimental observation of Josephson radiation from autonomous thin film bridges is reported. Microwave radiation in tin bridges of 'variable' thickness has been investigated where the thickness of the film forming the bridge is far less than the thickness of the bank films. (Auth.)
Optical constants and structural properties of thin gold films

DEFF Research Database (Denmark)

Yakubovsky, Dmitry I.; Arsenin, Aleksey V.; Stebunov, Yury V.

2017-01-01

We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold...... rules for thin-film plasmonic and nanophotonic devices....... films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part...

Raman spectroscopy of optical properties in CdS thin films

Directory of Open Access Journals (Sweden)

Trajić J.

2015-01-01

Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003
Room temperature deposition of magnetite thin films on organic substrate

International Nuclear Information System (INIS)

Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

2007-01-01

We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics
Barrier effect of AlN film in flexible Cu(In,Ga)Se{sub 2} solar cells on stainless steel foil and solar cell

Energy Technology Data Exchange (ETDEWEB)

Li, Boyan; Li, Jianjun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Wu, Li [The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071 (China); Liu, Wei; Sun, Yun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Zhang, Yi, E-mail: yizhang@nankai.edu.cn [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China)

2015-04-05

Highlights: • The adhension between AlN film and Mo are verygood. • AlN film can be effectively used as the barrier of flexible CIGS solar cell on SS substrate. • AlN film is suitable as the insulation barrier of flexible CIGS solar cell on SS substrate. - Abstract: The AlN film deposited by DC magnetron sputtering on stainless steel (SS) foils was used as the barrier in flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells on stainless steel foil and characterized comprehensively by X-ray diffraction (XRD), scanning electron microscopy (SEM), I–V, and QE measurements study. The study of AlN as insulation barrier in the flexible CIGS solar cell showed that the adhesion strength between the SS foil and the deposited AlN film was very strong even after annealing at high temperature at 530 °C. More importantly, a high resistance of over 10 MΩ was remained with the film with thickness of around 200 nm after annealing. This indicates that the AlN film is suitable as an effective insulation barrier in flexible CIGS solar cells based on SS foil. In addition, the XRD and SEM results showed that the AlN film did not influence the crystal structure of the Mo film which was deposited upon the AlN layer and used as the electrical contact in CIGS solar cells. It was found that the AlN film contributed to an improved crystallinity of the Mo contact layer compared to the bare SS foil. The combined results of secondary ion mass spectrometry, I–V and EQE measurements of the corresponding flexible CIGS solar cells confirmed that 1 μm-thick AlN film could be used as an efficient barrier layer in CIGS solar cells on SS foil.
Rapid thermal annealing of Ti-rich TiNi thin films: A new approach to fabricate patterned shape memory thin films

International Nuclear Information System (INIS)

Motemani, Y.; Tan, M.J.; White, T.J.; Huang, W.M.

2011-01-01

This paper reports the rapid thermal annealing (RTA) of Ti-rich TiNi thin films, synthesized by the co-sputtering of TiNi and Ti targets. Long-range order of aperiodic alloy could be achieved in a few seconds with the optimum temperature of 773 K. Longer annealing (773 K/240 s), transformed the film to a poorly ordered vitreous phase, suggesting a novel method for solid state amorphization. Reitveld refinement analyses showed significant differences in structural parameters of the films crystallized by rapid and conventional thermal annealing. Dependence of the elastic modulus on the valence electron density (VED) of the crystallized films was studied. It is suggested that RTA provides a new approach to fabricate patterned shape memory thin films.
Optical properties of CdS thin films by (SILAR) method

International Nuclear Information System (INIS)

Ates, A.; Gurbulak, B.; Yildirim, M.

2004-01-01

Full text: CdS thin film was grown by Successive ionic layer adsorption and reaction (SILAR) technique on quartz substrate. The film homogeneous of film is good and the film colour obtained as orange. Optical properties of CdS thin film has been investigated as a function of temperature in the temperature range 10-320 K with 10 K steps. The band gap energy decreased with increasing temperature
Transition metal carbide nanocomposite and amorphous thin films

OpenAIRE

Tengstrand, Olof

2014-01-01

This thesis explores thin films of binary and ternary transition metal carbides, in the Nb-C, Ti-Si-C, Nb-Si-C, Zr-Si-C, and Nb-Ge-C systems. The electrical and mechanical properties of these systems are affected by their structure and here both nanocomposite and amorphous thin films are thus investigated. By appropriate choice of transition metal and composition the films can be designed to be multifunctional with a combination of properties, such as low electric resistivity, low contact res...
Characterization of electron beam deposited thin films of HfO2 and binary thin films of (HfO2:SiO2) by XRD and EXAFS measurements

International Nuclear Information System (INIS)

Das, N.C.; Sahoo, N.K.; Bhattacharyya, D.; Thakur, S.; Kamble, N.M.; Nanda, D.; Hazra, S.; Bal, J.K.; Lee, J.F.; Tai, Y.L.; Hsieh, C.A.

2009-10-01

In this report, we have discussed the microstructure and the local structure of composite thin films having varying hafnia and silica compositions and prepared by reactive electron beam evaporation. XRD and EXAFS studies have confirmed that the pure hafnium oxide thin film has crystalline microstructure whereas the films with finite hafnia and silica composition are amorphous. The result of EXAFS analysis has shown that the bond lengths as well as coordination numbers around hafnium atom change with the variation of hafnia and silica compositions in the thin film. Finally, change of bond lengths has been correlated with change of refractive index and band gap of the composite thin films. (author)
Sensing of volatile organic compounds by copper phthalocyanine thin films

Science.gov (United States)

Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

2017-02-01

Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.
Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

Science.gov (United States)

Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

2018-06-01

The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.
Film-thickness and composition dependence of epitaxial thin-film PZT-based

NARCIS (Netherlands)

Nguyen, Duc Minh; Dekkers, Jan M.; Vu, Hung Ngoc; Rijnders, Augustinus J.H.M.

2013-01-01

The transverse piezoelectric coefficient e31,f and mass-sensitivity were measured on piezoelectric cantilevers based on epitaxial PZT thin-films with film-thicknesses ranging from 100 to 2000 nm. The highest values of e31,f and mass-sensitivity were observed at a film thickness of 500–750 nm, while
Selective inorganic thin films

Energy Technology Data Exchange (ETDEWEB)

Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

1995-05-01

This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.
Magnetic hysteresis measurements of thin films under isotropic stress.

Science.gov (United States)

Holland, Patrick; Dubey, Archana; Geerts, Wilhelmus

2000-10-01

Nowadays, ferromagnetic thin films are widely applied in devices for information technology (credit cards, video recorder tapes, floppies, hard disks) and sensors (air bags, anti-breaking systems, navigation systems). Thus, with the increase in the use of magnetic media continued investigation of magnetic properties of materials is necessary to help in determining the useful properties of materials for new or improved applications. We are currently interested in studying the effect of applied external stress on Kerr hysteresis curves of thin magnetic films. The Ni and NiFe films were grown using DC magnetron sputtering with Ar as the sputter gas (pAr=4 mTorr; Tsub=55-190 C). Seed and cap layers of Ti were used on all films for adhesion and oxidation protection, respectively. A brass membrane pressure cell was designed to apply in-plane isotropic stress to thin films. In this pressure cell, gas pressure is used to deform a flexible substrate onto which a thin magnetic film has been sputtered. The curvature of the samples could be controlled by changing the gas pressure to the cell. Magneto-Optical in-plane hysteresis curves at different values of strain were measured. The results obtained show that the stress sensitivity is dependent on the film thickness. For the 500nm NiFe films, the coercivity strongly decreased as a function of the applied stress.
Modification of thin film properties by ion bombardment during deposition

International Nuclear Information System (INIS)

Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

1984-01-01

Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)
Investigation on synthesis of Bi-based thin films on flat sputter-deposited Ag film by melting process

International Nuclear Information System (INIS)

Su Yanjing; Satoh, Yoshimasa; Arisawa, Shunichi; Awane, Toru; Fukuyo, Akihiro; Takano, Yoshihiko; Ishii, Akira; Hatano, Takeshi; Togano, Kazumasa

2003-01-01

We report on the fabrication of ribbon-like thin films on flat sputter-deposited Ag films whose surface smoothness remained within the order of tens of nm. It was found that the addition of Pb to the starting material improves the wettability of molten phase and facilitates the growth of Bi-2212 ribbon-like thin films on a flat Ag substrate, and that the increase of Ca and Cu in starting material suppresses the intergrowth of the Bi-2201 phase in ribbon-like thin films. By using (Bi,Pb)-2246 powders, with nominal composition of Bi 1.6 Pb 0.4 Sr 1.6 Ca 3.2 Cu 4.8 O y , as the starting material, the superconducting Bi-2212 ribbon-like thin films with an onset T c at 74 K on a very flat Ag substrate were successfully synthesized. Additionally, the growth mechanism of ribbon-like thin films on flat Ag substrate was investigated by in situ high temperature microscope observation
Picosecond and subpicosecond pulsed laser deposition of Pb thin films

Directory of Open Access Journals (Sweden)

F. Gontad

2013-09-01

Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.
Thin films of molecular materials synthesized from fisher's carbene ferrocenyl: Film formation and electrical properties

International Nuclear Information System (INIS)

Sanchez-Vergara, M.E.; Ortiz, A.; Alvarez-Toledano, C.; Moreno, A.; Alvarez, J.R.

2008-01-01

The synthesis of materials from Fisher's carbene ferrocenyl of the elements chromium, molybdenum and tungsten was carried out. The Fisher's compounds that were synthesized included the following combinations of two different metallic atoms: iron with chromium, iron with molybdenum and iron with tungsten. The molecular solids' preparation was done in electro-synthesis cells with platinum electrodes. Thin films were prepared by vacuum thermal evaporation on quartz substrates and crystalline silicon wafers. Pellets and thin films from these compounds were characterized by Fourier transform infrared spectroscopy, scanning electron microscopy, energy-dispersive spectroscopy, atomic force microscopy and ellipsometry. The powder and thin films synthesized from these materials show the same intra-molecular bonds shown by infrared spectroscopy results, suggesting that thermal evaporation does not alter these bonds in spite of the thin films being amorphous, in contrast with other bimetallic complexes where material decomposition occurs. The differences in the conductivity values of the prepared films are very small, so they may be attributed to the different metallic ions employed in each case. The tungsten complex exhibits a higher conductivity than the molybdenum and chromium complexes at room temperature. Electrical conductivity values found for thin films are higher than for pellets made of the same molecular materials
Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

Directory of Open Access Journals (Sweden)

Olga Korostynska

2002-08-01

Full Text Available Thin films of Tellurium dioxide (TeO2 were investigated for ÃŽÂ³-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co ÃŽÂ³-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and ÃŽÂ³-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time ÃŽÂ³-radiation dosimetry.
Electrochemical fabrication of nanoporous polypyrrole thin films

Energy Technology Data Exchange (ETDEWEB)

Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

2008-04-30

Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)
Electrochemical fabrication of nanoporous polypyrrole thin films

International Nuclear Information System (INIS)

Li Mei; Yuan Jinying; Shi Gaoquan

2008-01-01

Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)
Domains in Ferroic Crystals and Thin Films

CERN Document Server

Tagantsev, Alexander K; Fousek, Jan

2010-01-01

Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

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