Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

International Nuclear Information System (INIS)

Garino, Nadia; Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica; Gerbaldi, Claudio

2014-01-01

Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g −1 ) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm −2 after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency

Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

Energy Technology Data Exchange (ETDEWEB)

Garino, Nadia, E-mail: nadia.garino@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Gerbaldi, Claudio, E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); GAME Lab, Department of Applied Science and Technology – DISAT, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Turin (Italy)

2014-12-05

Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g{sup −1}) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm{sup −2} after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency.

Structural, optical and electrical properties of CeO2 thin films simultaneously prepared by anodic and cathodic electrodeposition

Science.gov (United States)

Yang, Yumeng; Du, Xiaoqing; Yi, Chenxi; Liu, Jiao; Zhu, Benfeng; Zhang, Zhao

2018-05-01

CeO2 thin films were deposited on stainless steel (SS) and indium tin oxide (ITO)-coated glass by simultaneous anodic and cathodic electrodeposition, and the influence of negative potential on the formation of ceria films was studied with scanning electron microscopy, X-ray diffraction, Raman spectroscopy, van der Pauw measurements, UV-visible spectroscopy and X-ray photoelectron spectroscopy. The results show that CeO2 films on the anode are slightly affected by the potential, but the particle size, crystal orientation, strain, film thickness, resistivity and Ce(III) content of the films on the cathode increases with increasing potential on the SS substrate. Contradictory to the results of the SS cathode, redshift (Ed changed from 3.95 eV to 3.56 eV and Ei changed from 3.42 eV to 3.04 eV) occurring in the absorption spectrum of CeO2 deposited on the ITO-coated glass cathode indicates that the content of Ce3+ in the cathodic films is dependent on the adopted substrates and decreases as the applied potential is increased.

Role of oxygen vacancies in anodic TiO2 thin films

International Nuclear Information System (INIS)

Tit, N.; Halley, J.W.

1992-05-01

Defects play an important role in the electronic and optical properties of amorphous solids in general. Here we present both experimental and theoretical investigations on the nature and origin of defect states in anodic rutile TiO 2 thin films (of thickness 5nm to 20nm). There is experimental evidence that the observed gap state at 0.7eV below the edge of conduction-band is due to an oxygen vacancy. For this reason, oxygen vacancies are used in our model. A comparison of the calculated bulk-photoconductivity to photospectroscopy experiment reveals that the films have bulk-like transport properties. On the other hand a fit of the surface density of states to the scanning tunneling microscopy (STM) on the (001) surfaces has suggested a surface defect density of 5% of oxygen vacancies. To resolve this discrepancy, we calculated the dc-conductivity where localization effects are included. Our results show an impurity band formation at about p c =9% of oxygen vacancies. We concluded that the gap states seen in STM are localized and the oxygen vacancies are playing the role of trapping centers (deep levels) in the studied films. (author). 15 refs, 5 figs

Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

Energy Technology Data Exchange (ETDEWEB)

Wu, Qingliu [Department of Chemical; Shi, Bing; Bareño, Javier; Liu, Yuzi; Maroni, Victor A.; Zhai, Dengyun; Dees, Dennis W.; Lu, Wenquan

2018-01-22

Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitable in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.

Linear Coefficient of Thermal Expansion of Porous Anodic Alumina Thin Films from Atomic Force Microscopy

OpenAIRE

Zhang, Richard X; Fisher, Timothy; Raman, Arvind; Sands, Timothy D

2009-01-01

In this article, a precise and convenient technique based on the atomic force microscope (AFM) is developed to measure the linear coefficient of thermal expansion of a porous anodic alumina thin film. A stage was used to heat the sample from room temperature up to 450 K. Thermal effects on AFM probes and different operation modes at elevated temperatures were also studied, and a silicon AFM probe in the tapping mode was chosen for the subsequent measurements due to its temperature insensitivi...

Effect of hydrogen on stresses in anodic oxide film on titanium

International Nuclear Information System (INIS)

Kim, Joong-Do; Pyun, Su-Il; Seo, Masahiro

2003-01-01

Stresses in anodic oxide film on titanium thin film/glass electrode in pH 8.4 borate solution were investigated by a bending beam method. The increases in compressive stress observed with cathodic potential sweeps after formation of anodic oxide film were attributed to the volume expansion due to the compositional change of anodic oxide film from TiO 2 to TiO 2-x (OH) x . The instantaneous responses of changes in stress, Δσ, in the anodic oxide film to potential steps demonstrated the reversible characteristic of the TiO 2-x (OH) x formation reaction. In contrast, the transient feature of Δσ for the titanium without anodic oxide film represented the irreversible formation of TiH x at the metal/oxide interphase. The large difference in stress between with and without the oxide film, has suggested that most of stresses generated during the hydrogen absorption/desorption reside in the anodic oxide film. A linear relationship between changes in stress, Δ(Δσ) des , and electric charge, ΔQ des , during hydrogen desorption was found from the current and stress transients, manifesting that the stress changes were crucially determined by the amount of hydrogen desorbed from the oxide film. The increasing tendency of -Δ(Δσ) des with increasing number of potential steps and film formation potential were discussed in connection with the increase in desorption amount of hydrogen in the oxide film with increasing absorption/desorption cycles and oxide film thickness

FIB-SEM investigation of trapped intermetallic particles in anodic oxide films on AA1050 aluminium

DEFF Research Database (Denmark)

Jariyaboon, Manthana; Møller, Per; Dunin-Borkowski, Rafal E.

2011-01-01

-containing intermetallic particles incorporated into the anodic oxide films on industrially pure aluminium (AA1050, 99.5 per cent) has been investigated. AA1050 aluminium was anodized in a 100?ml/l sulphuric acid bath with an applied voltage of 14?V at 20°C ±2°C for 10 or 120?min. The anodic film subsequently was analyzed......Purpose - The purpose of this investigation is to understand the structure of trapped intermetallics particles and localized composition changes in the anodized anodic oxide film on AA1050 aluminium substrates. Design/methodology/approach - The morphology and composition of Fe......-shaped particles were embedded in the anodic oxide film as a thin strip structure and located near the top surface of the film, whereas the round-shaped particles were trapped in the film with a spherical structure, but partially dissolved and were located throughout the thickness of the anodic film. The Fe...

Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

International Nuclear Information System (INIS)

Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

2006-01-01

Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2 O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10 /R sheet ) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

International Nuclear Information System (INIS)

Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

2005-01-01

Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

Characterizations of photoconductivity of graphene oxide thin films

Directory of Open Access Journals (Sweden)

Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

In situ fabrication of electrochemically grown mesoporous metallic thin films by anodic dissolution in deep eutectic solvents.

Science.gov (United States)

Renjith, Anu; Roy, Arun; Lakshminarayanan, V

2014-07-15

We describe here a simple electrodeposition process of forming thin films of noble metallic nanoparticles such as Au, Ag and Pd in deep eutectic solvents (DES). The method consists of anodic dissolution of the corresponding metal in DES followed by the deposition on the cathodic surface. The anodic dissolution process in DES overcomes the problems associated with copious hydrogen and oxygen evolution on the electrode surface when carried out in aqueous medium. The proposed method utilizes the inherent abilities of DES to act as a reducing medium while simultaneously stabilizing the nanoparticles that are formed. The mesoporous metal films were characterized by SEM, XRD and electrochemical techniques. Potential applications of these substrates in surface enhanced Raman spectroscopy and electrocatalysis have been investigated. A large enhancement of Raman signal of analyte was achieved on the mesoporous silver substrate after removing all the stabilizer molecules from the surface by calcination. The highly porous texture of the electrodeposited film provides superior electro catalytic performance for hydrogen evolution reaction (HER). The mechanisms of HER on the fabricated substrates were studied by Tafel analysis and electrochemical impedance spectroscopy (EIS). Copyright © 2014 Elsevier Inc. All rights reserved.

Micro-length anodic porous niobium oxide for lithium-ion thin film battery applications

International Nuclear Information System (INIS)

Yoo, Jeong Eun; Park, Jiyoung; Cha, Gihoon; Choi, Jinsub

2013-01-01

The anodization of niobium in an aqueous mixture of H 3 PO 4 and HF in the potential range from 2.5 to 30 V for 2 h at 5 °C was performed, demonstrating that anodic porous niobium oxide film with a thickness of up to 2000 nm, including a surface dissolution layer, can be obtained by controlling the applied potential and composition of the electrolytes. Specifically, surface dissolution-free porous niobium oxide film with a thickness of 800 nm can be prepared in a low electrolyte concentration. The surface dissolution is observed when the concentration ratio of HF (wt.%):H 3 PO 4 (M) was more than 2:1. The discontinuous layers in the niobium oxide film were observed when the thickness was higher than 500 nm, which was ascribed to the large volume expansion of the niobium oxide grown from the niobium metal. The anodic porous niobium oxide film was used as the cathode for lithium-ion batteries in the potential range from 1.2 to 3.0 V at a current density of 7.28 × 10 − 6 A cm −2 . The first discharge capacity of ca. 53 μA h cm − 2 was obtained in 800 nm thick niobium oxide without a surface dissolution layer. - Highlights: ► Anodic porous niobium oxide film with a thickness of 2000 nm was obtained. ► Surface dissolution-free porous niobium oxide film was prepared. ► The niobium oxide film was used as the cathode for lithium-ion batteries

Enhanced Absorption in Organic Thin-Films from Imprinted Concave Nanostructures

DEFF Research Database (Denmark)

Goszczak, Arkadiusz Jaroslaw; Rubahn, Horst-Günter; Madsen, Morten

2017-01-01

In this work, a rapid, replicable method for imprinting concave nanostructures to be used as functional light-trapping nanostructures in organic thin-films is presented. Porous anodic alumina templates were fabricated both by anodization of thick Al foils and by anodization of submicrometer thin Al...... patterns and used for imprinting of spin coated photoresist on glass substrates. We have investigated semi-periodic and aperiodic imprinted large concave patterns fabricated from rigid masters after anodization of Al in H3PO4. We show that metal covered imprinted concaves show enhancement in absorption...

Exploding metal film active anode source experiments on the LION extractor ion diode

International Nuclear Information System (INIS)

Rondeau, G.D.; Bordonaro, G.J.; Greenly, J.B.; Hammer, D.A.

1989-01-01

In this paper the authors report results using an extractor geometry magnetically insulated ion diode on the 0.5 TW LION accelerator. Experiments with an exploding metal film active anode plasma source (EMFAAPS) have shown that intense beams with significantly improved turn-on time compared to epoxy-filled-groove anodes can be produced. A new geometry, in which a plasma switch is used to provide the current path that explodes the thin film anode, has improved the ion efficiency (to typically 70%) compared with the previous scheme in which an electron collector on the anode provided this current. Leakage electron current is reduced when no collector is used

Tube Inner Coating of Non-Conductive Films by Pulsed Reactive Coaxial Magnetron Plasma with Outer Anode

Directory of Open Access Journals (Sweden)

Musab Timan Idriss Gasab

2018-03-01

Full Text Available The double-ended coaxial magnetron pulsed plasma (DCMPP method with auxiliary outer anode was introduced in order to achieve the uniform coating of non-conductive thin films on the inner walls of insulator tubes. In this study, titanium (Ti was employed as a cathode (sputtering target, and a glass tube was used as a substrate. In an argon (Ar and oxygen (O2 gas mixture, magnetron plasma was generated. Oxygen gas was introduced to deposit a titanium oxide (TiO2 film. A comparison between films coated with and without an auxiliary outer anode was made. As a result, it was clearly shown that the DCMPP method using an auxiliary outer anode enhanced the uniformity of the deposited non-conductive film compared to the conventional DCMPP method. Moreover, the optimum conditions under which the thin TiO2 film was deposited on the inner wall of the glass tube were revealed. From the results, it was supposed that the auxiliary outer anode contributed to the uniformity of the distributions of deposited negative charge on the non-conductive film and consequently the electric field and the plasma density uniform.

Influences of the main anodic electroplating parameters on cerium oxide films

Energy Technology Data Exchange (ETDEWEB)

Yang, Yang; Yang, Yumeng; Du, Xiaoqing; Chen, Yu [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); Zhang, Zhao, E-mail: eaglezzy@zjuem.zju.edu.cn [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); Zhang, Jianqing [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); State Key Laboratory for Corrosion and Protection of Metals, Shenyang 110016 (China)

2014-06-01

Cerium oxide thin films were fabricated onto 316 L stainless steel via a potentiostatically anodic electrodeposition approach in the solutions containing cerium(III) nitrate (0.05 M), ammonia acetate (0.1 M) and ethanol (10% V/V). The electrochemical behaviors and deposition parameters (applied potential, bath temperature, dissolving O{sub 2} and bath pH) have been investigated. Results show that, the electrochemical oxidation of Ce{sup 3+} goes through one electrochemical step, which is under charge transfer control. The optimum applied potential for film deposition is 0.8 V. Bath temperature plays a significant effect on the deposition rate, composition (different colors of the film) and surface morphology of the deposits. Due to the hydrolysis of Ce{sup 3+}, cerous hydroxide is facility to form when the bath temperature is higher than 60 °C. The electroplating bath pH is another key role for the anodic deposition of cerium oxide thin films, and the best bath pH is around 6.20. N{sub 2} or O{sub 2} purged into the bath will result in film porosities and O{sub 2} favors cerium oxide particles and film generation.

Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

Science.gov (United States)

Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

2014-11-01

The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ORDERED POROUS ANODIC ALUMINUM OXIDE FILMS MADE BY TWO-STEP ANODIZATION

OpenAIRE

HANSONG XUE; HUAJI LI; YU YI; HUIFANG HU

2007-01-01

Porous Anodic Aluminum Oxide (AAO) films were prepared by two-step anodizing in sulfuric and oxalic acid solutions and observed by transmission electron microscope (TEM) and X-ray diffraction. The results show that the form of AAO film is affected by the varieties and concentrations of electrolyte, anodizing voltage, and the anodizing time; the formation and evolution processes of the AAO film are relative with the anodizing voltage severely, and the appropriate voltage is helpful to the orde...

Nanoporous anodic aluminum oxide as a promising material for the electrostatically-controlled thin film interference filter

International Nuclear Information System (INIS)

Lo, Pei-Hsuan; Lee, Chih-Chun; Fang, Weileun; Luo, Guo-Lun

2015-01-01

This study presents the approach to implement the electrostatically-controlled thin film optical filter by using a nanoporous anodic aluminum oxide (np-AAO) layer as the key suspended micro structure. The bi-stable optical filter operates in the visible spectral range. In this work, the presented bi-stable optical filter has averaged reflectivity of 60%, and the central wavelengths are 580 and 690 nm respectively for on and off states. The presented np-AAO layer offers the following merits for the thin film optical filter: (1) material properties of np-AAO film, such as refractive index, elastic modulus and dielectric constant, can be easily changed by a low temperature pore-widening process, (2) in-use stiction of the suspended np-AAO structure can be reduced by the small contact area of nanoporous textures, (3) driving (pull-in) voltage can be reduced due to a large dielectric constant (ε AAO is 7.05) and small stiffness of np-AAO film and (4) dielectric charging can be reduced by the np-AAO material; thus the offset voltage is small. The study reports the design, fabrication and experimental results of the bi-stable optical filter to demonstrate the advantages of the presented device. The np-AAO material also has the potential for applications of other electrostatic drive micro devices. (paper)

L2O3 NANOSTRUCTURED FILMS CREATION BY METHOD OF ELECTROCHEMICAL ANODIZING

Directory of Open Access Journals (Sweden)

M. V. Zhukov

2013-05-01

Full Text Available Thin oxide films of aluminum were investigated by method of scanning probe microscopy. Electrical parameters of anodizing process were studied on different samples of aluminum to get the most structured oxide. The comparison of surface structure topography was held on oxide films by NTegra scanning probe microscope

Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

International Nuclear Information System (INIS)

Abd-Elnaiem, Alaa M.; Mebed, A.M.; El-Said, Waleed Ahmed; Abdel-Rahim, M.A.

2014-01-01

Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes

Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

Energy Technology Data Exchange (ETDEWEB)

Abd-Elnaiem, Alaa M., E-mail: alaa.abd-elnaiem@science.au.edu.eg [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Mebed, A.M. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Department of Physics, Faculty of Science, Al-Jouf University, Sakaka 2014 (Saudi Arabia); El-Said, Waleed Ahmed [Department of Chemistry, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Abdel-Rahim, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

2014-11-03

Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes.

Dewetting of polymer thin films on modified curved surfaces: preparation of polymer nanoparticles with asymmetric shapes by anodic aluminum oxide templates.

Science.gov (United States)

Liu, Chih-Ting; Tsai, Chia-Chan; Chu, Chien-Wei; Chi, Mu-Huan; Chung, Pei-Yun; Chen, Jiun-Tai

2018-04-18

We study the dewetting behaviors of poly(methyl methacrylate) (PMMA) thin films coated in the cylindrical nanopores of anodic aluminum oxide (AAO) templates by thermal annealing. Self-assembled monolayers (SAMs) of n-octadecyltrichlorosilane (ODTS) are introduced to modify the pore surfaces of the AAO templates to induce the dewetting process. By using scanning electron microscopy (SEM), the dewetting-induced morphology transformation from the PMMA thin films to PMMA nanoparticles with asymmetric shapes can be observed. The sizes of the PMMA nanoparticles can be controlled by the original PMMA solution concentrations. The dewetting phenomena on the modified nanopores are explained by taking into account the excess intermolecular interaction free energy (ΔG). This work opens a new possibility for creating polymer nanoparticles with asymmetric shapes in confined geometries.

Enhanced Absorption in Organic Thin-Films from Imprinted Concave Nanostructures

Directory of Open Access Journals (Sweden)

Arkadiusz Jarosław GOSZCZAK

2017-02-01

Full Text Available In this work, a rapid, replicable method for imprinting concave nanostructures to be used as functional light-trapping nanostructures in organic thin-films is presented. Porous anodic alumina templates were fabricated both by anodization of thick Al foils and by anodization of submicrometer thin Al films evaporated via e-beam evaporation on Si substrates. The template formation leads to natural patterning of the underlying Al layers that are used as rigid masters for stamp fabrication, after selective etching of the porous anodic alumina. PDMS stamps were made after replicating the Al concave patterns and used for imprinting of spin coated photoresist on glass substrates. We have investigated semi-periodic and aperiodic imprinted large concave patterns fabricated from rigid masters after anodization of Al in H3PO4. We show that metal covered imprinted concaves show enhancement in absorption that is attributed to field enhancement and diffuse scattering, leading to efficient light trapping for a selected active layer material (P3HT:PCBM.DOI: http://dx.doi.org/10.5755/j01.ms.23.1.14188

Fabrication of superhydrophobic niobium pentoxide thin films by anodization

Energy Technology Data Exchange (ETDEWEB)

Jeong, Bong-Yong [Future Convergence Ceramic Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); Jung, Eun-Hye [Future Convergence Ceramic Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); Department of Chemical Engineering, Inha University, Incheon 402-024 (Korea, Republic of); Kim, Jin-Ho, E-mail: jhkim@kicet.re.kr [Electronic and Optic Materials Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of)

2014-07-01

We report a simple method to fabricate a niobium oxide film with a lotus-like micro–nano surface structure. Self-assembled niobium pentoxide (Nb{sub 2}O{sub 5}) films with superhydrophobic property were fabricated by an anodization and a hydrophobic treatment. This process has several advantages such as low cost, simplicity and easy coverage of a large area. The surface of fabricated Nb{sub 2}O{sub 5} film was changed from hydrophilic to superhydrophobic surface by a treatment using fluoroaldyltrimethoxysilane (FAS) solution. This value is considered to be the lowest surface free energy of any solid, based on the alignment of -CF{sub 3} groups on the surface. In particular, among FAS coated surfaces, the micro–nano complex cone structured Nb{sub 2}O{sub 5} film showed the highest water-repellent property with a static contact angle of ca. 162°. This study gives promising routes from biomimetic superhydrophobic surfaces.

Ellipsometry of anodic film growth

Energy Technology Data Exchange (ETDEWEB)

Smith, C.G.

1978-08-01

An automated computer interpretation of ellisometer measurements of anodic film growth was developed. Continuous mass and charge balances were used to utilize more fully the time dependence of the ellipsometer data and the current and potential measurements. A multiple-film model was used to characterize the growth of films which proceeds via a dissolution--precipitation mechanism; the model also applies to film growth by adsorption and nucleation mechanisms. The characteristic parameters for film growth describe homogeneous and heterogeneous crystallization rates, film porosities and degree of hydration, and the supersaturation of ionic species in the electrolyte. Additional descriptions which may be chosen are patchwise film formation, nonstoichiometry of the anodic film, and statistical variations in the size and orientation of secondary crystals. Theories were developed to describe the optical effects of these processes. An automatic, self-compensating ellipsometer was used to study the growth in alkaline solution of anodic films on silver, cadmium, and zinc. Mass-transport conditions included stagnant electrolyte and forced convection in a flow channel. Multiple films were needed to characterize the optical properties of these films. Anodic films grew from an electrolyte supersatuated in the solution-phase dissolution product. The degree of supersaturation depended on transport conditions and had a major effect on the structure of the film. Anodic reaction rates were limited by the transport of charge carriers through a primary surface layer. The primary layers on silver, zinc, and cadmium all appeared to be nonstoichiometric, containing excess metal. Diffusion coefficients, transference numbers, and the free energy of adsorption of zinc oxide were derived from ellipsometer measurements. 97 figures, 13 tables, 198 references.

Fabrication of amorphous Si and C anode films via co-sputtering for an all-solid-state battery

Energy Technology Data Exchange (ETDEWEB)

Lee, K.S. [Department of Materials Science and Engineering, Yonsei University Shinchondong, 262 Seongsanno, Seodaemoongu, Seoul 120-749 (Korea, Republic of); Department of Environment and Energy Engineering, Gachon University, Seongnamdaero 1342, 461-710 Gyeonggi-do (Korea, Republic of); Lee, S.H. [Department of Environment and Energy Engineering, Gachon University, Seongnamdaero 1342, 461-710 Gyeonggi-do (Korea, Republic of); Woo, S.P. [Department of Materials Science and Engineering, Yonsei University Shinchondong, 262 Seongsanno, Seodaemoongu, Seoul 120-749 (Korea, Republic of); Department of Environment and Energy Engineering, Gachon University, Seongnamdaero 1342, 461-710 Gyeonggi-do (Korea, Republic of); Kim, H.S. [Department of Mechanical Engineering, Gachon University, Seongnamdaero 1342, 461-710 Gyeonggi-do (Korea, Republic of); Yoon, Y.S., E-mail: benedicto@gachon.ac.kr [Department of Environment and Energy Engineering, Gachon University, Seongnamdaero 1342, 461-710 Gyeonggi-do (Korea, Republic of)

2014-08-01

In this study, a combination of silicon and carbon as the anode material for an all-solid-state battery has been investigated to overcome their individual deficiencies. The capacity of silicon thin films with an input power of 60 W shows dramatic failure after 38 cycles due to serious volume expansion. In contrast, C thin films at 60 W show high stability of cyclic performance and capacity retention. The amorphous silicon and carbon composite reduced the volume expansion of silicon during long term cycles and enhanced the low specific capacity of the carbon. This resistance of the volume expansion might be expected from the cushion effect caused by the carbon, which was confirmed by scanning electron microscope images after a 100 cycle test. These results indicate that amorphous silicon and carbon composite thin films have a high possibility as the stable anode material for an all-solid-state battery. - Highlights: • Amorphous Si/C nanocomposite thin films have been prepared by co-sputtering. • Carbon can act as a cushion effect to prevent volume expansion of Si. • Amorphous Si/C nanocomposite thin films show structure stability at 100 cycles. • Capacity of the amorphous Si/C nanocomposite thin films was enhanced considerably.

Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

Energy Technology Data Exchange (ETDEWEB)

Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

2010-08-15

In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

Unidirectional oxide hetero-interface thin-film diode

International Nuclear Information System (INIS)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

2015-01-01

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

A FED Prototype Using Patterned DLC Thin Films as the Cathode

Science.gov (United States)

Li, W.; Feng, T.; Mao, D. S.; Wang, X.; Liu, X. H.; Zou, S. C.; Zhu, Y. K.; Li, Q.; Xu, J. F.; Jin, S.; Zheng, J. S.

In our study, diamond-like-carbon (DLC) thin films were prepared by filtered arc deposition (FAD), which provided a way to deposit DLC thin films on large areas at room temperature. Glass slides coated 100nm chromium or titanium thin films were used as cathode substrates. Millions of rectangular holes with sizes of 5 × 5μm were made on the DLC films using a routine patterning process. Here a special reactive ion beam etching method was applied to etch the DLC films. The anodes of the devices were made by electrophoretic deposition. ZnO:Zn phosphor (P15) was employed, which has a broad band bluish green (centered at 490nm). Before electrophoretic deposition, the anode substrates (ITO glass slides) had been patterned into 50 anode electrodes. In order to improve the adherence of phosphor layers, the as-deposited screens were treated in Na2SiO3 solution for 24h to add additional binder. A kind of matrix-addressed diode FED prototype was designed and packaged. 50-100μm-thick glass slides were used as spacers and getters were applied to maintain the vacuum after the exhaustion. The applied DC voltage was ranged in 0-3000V and much higher current density was measured in the cathode-patterned prototypes than the unpatterned ones during the test. As a result, characters could be well displayed.

Electrochemical Thinning for Anodic Aluminum Oxide and Anodic Titanium Oxide

Energy Technology Data Exchange (ETDEWEB)

Lee, In Hae; Jo, Yun Kyoung; Kim, Yong Tae; Tak, Yong Sug; Choi, Jin Sub [Inha University, Incheon (Korea, Republic of)

2012-05-15

For given electrolytes, different behaviors of anodic aluminum oxide (AAO) and anodic titanium oxide (ATO) during electrochemical thinning are explained by ionic and electronic current modes. Branched structures are unavoidably created in AAO since the switch of ionic to electronic current is slow, whereas the barrier oxide in ATO is thinned without formation of the branched structures. In addition, pore opening can be possible in ATO if chemical etching is performed after the thinning process. The thinning was optimized for complete pore opening in ATO and potential-current behavior is interpreted in terms of ionic current-electronic current switching.

Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

Science.gov (United States)

Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

2013-03-01

Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

A novel application of the CuI thin film for preparing thin copper nanowires

International Nuclear Information System (INIS)

Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

2005-01-01

We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

Properties of Sn-doped TiO2 nanotubes fabricated by anodization of co-sputtered Ti–Sn thin films

International Nuclear Information System (INIS)

Kyeremateng, Nana Amponsah; Hornebecq, Virginie; Knauth, Philippe; Djenizian, Thierry

2012-01-01

Self-organized Sn-doped TiO 2 nanotubes (nts) were fabricated for the first time, by anodization of co-sputtered Ti and Sn thin films. This nanostructured material was characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, UV–vis spectroscopy and transmission electron microscopy. Due to their remarkable properties, Sn-doped TiO 2 nts can find potential applications in Li-ion microbatteries, photovoltaics, and catalysis. Particularly, the electrochemical performance as an anode material for Li-ion microbatteries was evaluated in Li test cells. With current density of 70 μA cm −2 (1 C) and cut-off potential of 1 V, Sn-doped TiO 2 nts showed improved performance compared to simple TiO 2 nts, and differential capacity plots revealed that the material undergoes full electrochemical reaction as a Rutile-type TiO 2 .

Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

Science.gov (United States)

Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

2016-02-01

We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

Electrical Properties of a Thin Anodized Capacitor Made of Y-Doped Al Alloy Film

Science.gov (United States)

Onozuka, Tomotake; Sasaki, Hayato; Mikuni, Naohiro; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

2005-09-01

We have prepared an Al-Y anodized capacitor using sputter-deposited Al-Y alloy film with 5 at. % Y atoms, and evaluated the capacitor properties and the leakage current properties before and after heat treatment. In addition, the characterization of Al-Y anodized films was examined by X-ray diffraction, Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy analyses. As a result, it is revealed that the thermal stability of an Al-Y anodized capacitor is superior to that of a pure Al anodized capacitor because of its excellent passive nature, and the loss properties can be improved by increasing the heat treatment temperature in air because of the reduction of the equivalent series resistance. Furthermore, it is clarified that the cause of the short-circuited state observed at 550°C is the formation of a narrow capillary-like conduction path of metallic Al atoms as a result of the interdiffusion of Al.

Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

Energy Technology Data Exchange (ETDEWEB)

Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Parkoun, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Sokol, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

2005-09-30

Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm{sup -3} sulphuric acid at 50 deg. C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H{sub 3}O{sup +} ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.

Fabrication and characterization of nanostructured anatase TiO{sub 2} films prepared by electrochemical anodization and their photocatalytic properties

Energy Technology Data Exchange (ETDEWEB)

Yurddaskal, Metin [Dokuz Eylul University, The Graduate School of Natural and Applied Sciences, Buca 35390, Izmir (Turkey); Dokuz Eylul University, Center for Fabrication and Applications of Electronic Materials (EMUM), Buca, 35390, Izmir (Turkey); Dikici, Tuncay, E-mail: tuncay.dikici@ikc.edu.tr [Dokuz Eylul University, The Graduate School of Natural and Applied Sciences, Buca 35390, Izmir (Turkey); Izmir Katip Celebi University, Department of Materials Science and Engineering, Cigli 35620, Izmir (Turkey); Yildirim, Serdar [Dokuz Eylul University, The Graduate School of Natural and Applied Sciences, Buca 35390, Izmir (Turkey); Dokuz Eylul University, Center for Fabrication and Applications of Electronic Materials (EMUM), Buca, 35390, Izmir (Turkey); Yurddaskal, Melis [Celal Bayar University, Department of Mechanical Engineering, Muradiye, 45140 Manisa (Turkey); Toparli, Mustafa; Celik, Erdal [Dokuz Eylul University, Center for Fabrication and Applications of Electronic Materials (EMUM), Buca, 35390, Izmir (Turkey); Dokuz Eylul University, Department of Metallurgical and Materials Engineering, Buca 35390, Izmir (Turkey)

2015-12-05

In this study, nanostructured anatase titanium dioxide (TiO{sub 2}) films were fabricated by electrochemical anodization of titanium first, and then annealed at 500 °C for 2 h. Effect of electrolyte concentration, anodization time and electrolyte temperature on the surface morphology of the resulting TiO{sub 2} thin films were investigated. The phase structures, surface morphology and chemical composition were analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The photocatalytic activity tests of the samples were evaluated by the degradation of aqueous methylene blue (MB) solutions under UV light illumination for different periods of time. The results showed that the structure of nanostructured TiO{sub 2} films depended strongly on the anodization parameters. It was found that there were micro-scale pores (<10 μm) and nano-scale pores (diameter in the range from 40 to 70 nm) on the anodized titanium surfaces. This study indicated that structures, surface morphology, and surface area of the nanostructured anatase TiO{sub 2} films played an important role on their photocatalytic performance. The results clearly proved that nanostructured anatase TiO{sub 2} film prepared with optimum process parameters resulted in enhancement of the photocatalytic activity. - Highlights: • TiO{sub 2} thin films were prepared on titanium substrates by electrochemical anodization at 30 V. • Effect of various anodization parameters on the photocatalytic activity of titanium was investigated. • Micro- and nanoscale TiO{sub 2} pores formed on the titanium by anodizing. • Surface morphology of the TiO{sub 2} films plays an important role on the photocatalytic performance. • The sample anodized for 240 min showed the highest photocatalytic activity.

The role and effect of residual stress on pore generation during anodization of aluminium thin films

International Nuclear Information System (INIS)

Liao, M.W.; Chung, C.K.

2013-01-01

Highlights: •Al films of varying residual stress were prepared by sputtering. •Variation of the residual stress in the Al films influences pore growth during anodization. •The change in average pore size with residual stress is fairly small. •Interaction of residual stress with oxide growth stress leads to change in structure. •Residual tensile stress increases the pore density of porous alumina. -- Abstract: The role and effect of residual stress on pore generation of anodized aluminium oxide (AAO) have been investigated into anodizing the various-residual-stresses aluminium films. The plane stresses were characterised by X-ray diffraction with sin 2 ψ method. The pore density roughly linearly increased with residual stress from 64.6 (−132.5 MPa) to 90.5 pores/μm 2 (135.9 MPa). However, the average pore size around 40 nm was not changed significantly except for the rougher film. The tensile residual stress lessened the compressive oxide growth stress to reduce AAO plastic deformation for higher pore density. The findings provide new foundations for realizing AAO films on silicon

Semi-transparent ordered TiO_2 nanostructures prepared by anodization of titanium thin films deposited onto the FTO substrate

International Nuclear Information System (INIS)

Szkoda, Mariusz; Lisowska-Oleksiak, Anna; Grochowska, Katarzyna; Skowroński, Łukasz; Karczewski, Jakub; Siuzdak, Katarzyna

2016-01-01

Highlights: • High quality titanium coatings were doposited using industrial magnetron sputtering equipment. • Semi-transparent TiO_2 were prepared via anodization realized in various conditions. • Depending on electrolyte type, ordered tubular or porous TiO_2 layers were obtained. • Prepared material can act as semiconducting layer in photovoltaic cells. - Abstract: In a significant amount of cases, the highly ordered TiO_2 nanotube arrays grow through anodic oxidation of a titanium metal plate immersed in electrolyte containing fluoride ions. However, for some practical applications, e.g. solar cells or electrochromic windows, the semi-transparent TiO_2 formed directly on the transparent, conductive substrate is very much desired. This work shows that high-quality Ti coating could be formed at room temperature using an industrial magnetron sputtering system within 50 min. Under optimized conditions, the anodization process was performed on 2 μm titanium films deposited onto the FTO (fluorine-tin-oxide) support. Depending on the electrolyte type, highly ordered tubular or porous titania layers were obtained. The fabricated samples, after their thermal annealing, were investigated using scanning electron microscopy, Raman spectroscopy and UV–vis spectroscopy in order to investigate their morphology, crystallinity and absorbance ability. The photocurrent response curves indicate that materials are resistant to the photocorrosion process and their activity is strongly connected to optical properties. The most transparent TiO_2 films were fabricated when Ti was anodized in water electrolyte, whereas the highest photocurrent densities (12 μA cm"−"2) were registered for titania received after Ti anodization in ethylene glycol solution. The obtained results are of significant importance in the production of thin, semi-transparent titania nanostructures on a commercial scale.

MultiLayer solid electrolyte for lithium thin film batteries

Science.gov (United States)

Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

2015-07-28

A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

Study of thin films of carrier-doped strontium titanate with emphasis on their interfaces with organic thin films

Energy Technology Data Exchange (ETDEWEB)

Sato, Naoki [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)]. E-mail: naokis@e.kuicr.kyoto-u.ac.jp; Harada, Youichiro [Laboratory of Molecular Aggregation Analysis, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Terashima, Takahito [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Kanda, Ryoko [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Takano, Mikio [International Research Center of Elements Science, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)

2005-05-15

Fifty nanometer-thick metal-doped strontium titanate (M:STO, M = La and V) films deposited epitaxially on single crystalline STO substrates were characterized in comparison with indium tin oxide (ITO) covered glasses, to check their applicability to optically transparent anode materials for organic optoelectronic devices. M:STO, in particular V:STO, films turned out to have distinct surface flatness, needfully low electric resistivities and notably large work functions. While their optical transmittances are lower than those of ITOs at this moment, we suggest that M:STO films have a potential to take the place of ITO films. Further, we have observed energy level alignments for copper phthalocyanine thin films at the interface of V:STO.

Zn Thin Film Deposition for Fe Layer Shielding Use the Sputtering Technique on Cylindrical Form

International Nuclear Information System (INIS)

Yunanto; Tjipto Sujitno, BA; Suprapto; Simbolon, Sahat

2002-01-01

Deposition of thin film on Fe substrate use sputtering technique on cylindrical form was carried out. The purpose of this research is to protect Fe due to the corrosion with Zn thin film. Sputtering method was proposed to protect a component of complex form. Substrate has functioned as anode, meanwhile target in cylindrical form as a cathode. Argon ion from anode bombard Zn with enough energy for releasing Zn. Zn atom would scatter and some of then was focused on the anode. For testing Zn atom on Fe by using XRF and corrosion rate with potentiostat. It was found that corrosion rate was decreased from 0.051 mpy to 0.031 mpy on 0.63 % of Fe substrate. (author)

Synthesis and characterization of nanoporous anodic oxide film on aluminum in H3PO4 + KMnO4 electrolyte mixture at different anodization conditions

Science.gov (United States)

Verma, Naveen; Jindal, Jitender; Singh, Krishan Chander; Mari, Bernabe

2016-04-01

The micro structural properties of nanoporous anodic oxide film formed in H3PO4 were highly influenced by addition of a low concentration of KMnO4 (0.0005 M) in 1 M H3PO4 solution. The KMnO4 as additive enhanced the growth rate of oxide film formation as well as thickness of pore walls. Furthermore the growth rate was found increased with increase in applied current density. The increase in temperature and lack of stirring during anodization causes the thinness of pore wall which leads to increase in pore volume. With the decrease in concentration of H3PO4 in anodizing electrolyte from 1M to 0.3 M, keeping all other conditions constant, the decrease in porosity was observed. This might be due to the dissolution of aluminium oxide film in highly concentrated acidic solution.

Solid Oxide Fuel Cell Based Upon Colloidal Deposition of Thin Films for Lower Temperature Operation (Preprint)

National Research Council Canada - National Science Library

Reitz, T. L; Xiao, H

2006-01-01

In order to reduce the operating temperature of solid oxide fuel cells (SOFCs), anode-supported cells incorporating thin film electrolytes in conjunction with anode/electrolyte and cathode/electrolyte interlayers were studied...

Effects of the voltage and time of anodization on modulation of the pore dimensions of AAO films for nanomaterials synthesis

Science.gov (United States)

Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Maryam, W.; Ahmad, M. A.; Bououdina, M.

2015-12-01

Highly-ordered and hexagonal-shaped nanoporous anodic aluminum oxide (AAO) of 1 μm thickness of Al pre-deposited onto Si substrate using two-step anodization was successfully fabricated. The growth mechanism of the porous AAO film was investigated by anodization current-time behavior for different anodizing voltages and by visualizing the microstructural procedure of the fabrication of AAO film by two-step anodization using cross-sectional and top view of FESEM imaging. Optimum conditions of the process variables such as annealing time of the as-deposited Al thin film and pore widening time of porous AAO film were experimentally determined to obtain AAO films with uniformly distributed and vertically aligned porous microstructure. Pores with diameter ranging from 50 nm to 110 nm and thicknesses between 250 nm and 1400 nm, were obtained by controlling two main influential anodization parameters: the anodizing voltage and time of the second-step anodization. X-ray diffraction analysis reveals amorphous-to-crystalline phase transformation after annealing at temperatures above 800 °C. AFM images show optimum ordering of the porous AAO film anodized under low voltage condition. AAO films may be exploited as templates with desired size distribution for the fabrication of CuO nanorod arrays. Such nanostructured materials exhibit unique properties and hold high potential for nanotechnology devices.

Growth behavior of anodic oxide formed by aluminum anodizing in glutaric and its derivative acid electrolytes

Science.gov (United States)

Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Suzuki, Ryosuke O.

2014-12-01

The growth behavior of anodic oxide films formed via anodizing in glutaric and its derivative acid solutions was investigated based on the acid dissociation constants of electrolytes. High-purity aluminum foils were anodized in glutaric, ketoglutaric, and acetonedicarboxylic acid solutions under various electrochemical conditions. A thin barrier anodic oxide film grew uniformly on the aluminum substrate by glutaric acid anodizing, and further anodizing caused the film to breakdown due to a high electric field. In contrast, an anodic porous alumina film with a submicrometer-scale cell diameter was successfully formed by ketoglutaric acid anodizing at 293 K. However, the increase and decrease in the temperature of the ketoglutaric acid resulted in non-uniform oxide growth and localized pitting corrosion of the aluminum substrate. An anodic porous alumina film could also be fabricated by acetonedicarboxylic acid anodizing due to the relatively low dissociation constants associated with the acid. Acid dissociation constants are an important factor for the fabrication of anodic porous alumina films.

Annealing Effect on the Photoelectrochemical Properties of BiVO_4 Thin Film Electrodes

International Nuclear Information System (INIS)

Siti Nur Farhana Mohd Nasir; Mohd Asri Mat Teridi; Mehdi Ebadi; Sagu, J.S.

2015-01-01

Monoclinic bismuth vanadate (BiVO_4) thin film electrodes were fabricated on fluorine-doped tin oxide via aerosol-assisted chemical vapour deposition (AACVD). Annealing and without annealing effect of thin films were analysed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectrophotometry (UV-Vis) and current voltage measurement. All BiVO_4 thin films showed an anodic photocurrent. The sample of BiVO_4 annealed at 400 degree Celsius exhibited the highest photocurrent density of 0.44 mAcm"-"2 vs. Ag/ AgCl at 1.23 V. (author)

Semi-transparent ordered TiO{sub 2} nanostructures prepared by anodization of titanium thin films deposited onto the FTO substrate

Energy Technology Data Exchange (ETDEWEB)

Szkoda, Mariusz, E-mail: mariusz-szkoda@wp.pl [Department of Chemistry and Technology of Functional Materials, Faculty of Chemistry, Gdańsk University of Technology, Narutowicza 11/12, Gdańsk 80-233 (Poland); Lisowska-Oleksiak, Anna [Department of Chemistry and Technology of Functional Materials, Faculty of Chemistry, Gdańsk University of Technology, Narutowicza 11/12, Gdańsk 80-233 (Poland); Grochowska, Katarzyna [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Science, Fiszera 14, 80-231 Gdańsk (Poland); Skowroński, Łukasz [Institute of Mathematics and Physics, UTP University of Science and Technology, Kaliskiego 7, 85-796 Bydgoszcz (Poland); Karczewski, Jakub [Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, Narutowicza 11/12, 80-233 Gdańsk (Poland); Siuzdak, Katarzyna [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Science, Fiszera 14, 80-231 Gdańsk (Poland)

2016-09-15

Highlights: • High quality titanium coatings were doposited using industrial magnetron sputtering equipment. • Semi-transparent TiO{sub 2} were prepared via anodization realized in various conditions. • Depending on electrolyte type, ordered tubular or porous TiO{sub 2} layers were obtained. • Prepared material can act as semiconducting layer in photovoltaic cells. - Abstract: In a significant amount of cases, the highly ordered TiO{sub 2} nanotube arrays grow through anodic oxidation of a titanium metal plate immersed in electrolyte containing fluoride ions. However, for some practical applications, e.g. solar cells or electrochromic windows, the semi-transparent TiO{sub 2} formed directly on the transparent, conductive substrate is very much desired. This work shows that high-quality Ti coating could be formed at room temperature using an industrial magnetron sputtering system within 50 min. Under optimized conditions, the anodization process was performed on 2 μm titanium films deposited onto the FTO (fluorine-tin-oxide) support. Depending on the electrolyte type, highly ordered tubular or porous titania layers were obtained. The fabricated samples, after their thermal annealing, were investigated using scanning electron microscopy, Raman spectroscopy and UV–vis spectroscopy in order to investigate their morphology, crystallinity and absorbance ability. The photocurrent response curves indicate that materials are resistant to the photocorrosion process and their activity is strongly connected to optical properties. The most transparent TiO{sub 2} films were fabricated when Ti was anodized in water electrolyte, whereas the highest photocurrent densities (12 μA cm{sup −2}) were registered for titania received after Ti anodization in ethylene glycol solution. The obtained results are of significant importance in the production of thin, semi-transparent titania nanostructures on a commercial scale.

Preparation and Characterization of Anode-Supported YSZ Thin Film Electrolyte by Co-Tape Casting and Co-Sintering Process

International Nuclear Information System (INIS)

Liu, Q L; Fu, C J; Chan, S H; Pasciak, G

2011-01-01

In this study, a co-tape casting and co-sintering process has been developed to prepare yttria-stabilized zirconia (YSZ) electrolyte films supported on Ni-YSZ anode substrates in order to substantially reduce the fabrication cost of solid oxide fuel cells (SOFC). Through proper control of the process, the anode/electrolyte bilayer structures with a size of 7.8cm x 7.8cm were achieved with good flatness. Scanning electron microscopy (SEM) observation indicated that the YSZ electrolyte film was about 16 μm in thickness, highly dense, crack free and well-bonded to the anode support. The electrochemical properties of the prepared anode-supported electrolyte film was evaluated in a button cell mode incorporating a (LaSr)MnO 3 -YSZ composite cathode. With humidified hydrogen as the fuel and stationary air as the oxidant, the cell demonstrated an open-circuit voltage of 1.081 V and a maximum power density of 1.01 W/cm 2 at 800 deg. C. The obtained results represent the important progress in the development of anode-supported intermediate temperature SOFC with reduced fabrication cost.

Preparation and Characterization of Anode-Supported YSZ Thin Film Electrolyte by Co-Tape Casting and Co-Sintering Process

Science.gov (United States)

Liu, Q. L.; Fu, C. J.; Chan, S. H.; Pasciak, G.

2011-06-01

In this study, a co-tape casting and co-sintering process has been developed to prepare yttria-stabilized zirconia (YSZ) electrolyte films supported on Ni-YSZ anode substrates in order to substantially reduce the fabrication cost of solid oxide fuel cells (SOFC). Through proper control of the process, the anode/electrolyte bilayer structures with a size of 7.8cm × 7.8cm were achieved with good flatness. Scanning electron microscopy (SEM) observation indicated that the YSZ electrolyte film was about 16 μm in thickness, highly dense, crack free and well-bonded to the anode support. The electrochemical properties of the prepared anode-supported electrolyte film was evaluated in a button cell mode incorporating a (LaSr)MnO3-YSZ composite cathode. With humidified hydrogen as the fuel and stationary air as the oxidant, the cell demonstrated an open-circuit voltage of 1.081 V and a maximum power density of 1.01 W/cm2 at 800°C. The obtained results represent the important progress in the development of anode-supported intermediate temperature SOFC with reduced fabrication cost.

Nanoscale aluminum concaves for light-trapping in organic thin-films

DEFF Research Database (Denmark)

Goszczak, Arkadiusz Jaroslaw; Adam, Jost; Cielecki, Pawel Piotr

2016-01-01

Anodic aluminum oxide (AAO) templates, fabricated from oxalic acid and phosphoric acid, lead to non-periodic nanoscale concave structures in their underlying aluminum layer, which are investigated for their field-enhancement properties by applying a thin-film polymer coating based laser ablation...

Growth of anatase titanium dioxide nanotubes via anodization

Directory of Open Access Journals (Sweden)

Ed Adrian Dilla

2012-06-01

Full Text Available In this work, titanium dioxide nanotubes were grown via anodization of sputtered titanium thin films using different anodization parameters in order to formulate a method of producing long anatase titanium dioxide nanotubes intended for solar cell applications. The morphological features of the nanotubes grown via anodization were explored using a Philips XL30 Field Emission Scanning Electron Microscope. Furthermore, the grown nanotubes were also subjected to X-ray diffraction and Raman spectroscopy in order to investigate the effect of the predominant crystal orientation of the parent titanium thin film on the crystal phase of the nanotubes. After optimizing the anodization parameters, nanotubes with anatase TiO2 crystal phase and tube length more than 2 microns was produced from parent titanium thin films with predominant Ti(010 crystal orientation and using ammonium fluoride in ethylene glycol as an electrolyte with a working voltage equal to 60V during 1-hour anodization runs.

Fabrication of porous anodic alumina films by using two-step anodization process

International Nuclear Information System (INIS)

Xu Zhan; Zhou Bin; Xu Xiang; Wang Xiaoli; Wu Di; Shen Jun

2006-01-01

This article introduces the fabrication of the porous anodic alumina films which have ordered pore arrangement by using a two-step anodization process. The films have a parallel channel structure which nanopore diameter can be 20-100 nm, and depth can reach 50 μm. The change of pore structure in the first and second anodization, moving the alumina layer, widening process was analysed. The effect of the parameters such as different electrolytes, anodization temperature and the voltage on the nanopore structure was studied. The surface and profile structure through FE-SEM (field emission scanning electron microscope), the element composition in tiny area of the anodic aluminum oxide (AAO) surface were studied. The result indicates the pore diameter of AAO which is anodized in oxalic acid solution is larger than which anodized in sulfuric acid solution. The anodization temperature and voltage can enlarge the nanopore diameter of AAO in a range. (authors)

Physical-mechanical and electrical properties of aluminium anodic films

Energy Technology Data Exchange (ETDEWEB)

Dima, L. [Research and Design Inst. for Electr. Eng., Bucharest (Romania); Anicai, L. [Research and Design Inst. for Electr. Eng., Bucharest (Romania)

1995-11-01

Mechanical, thermal and electrical properties of aluminium anodic films obtained by continuously anodization of Al wires of 4.5 mm diameter and Al sheets of 40 x 0.2 mm (Al min.99.5% purity), using an electrolyte based on oxalic acid, citric acid, boric acid, isopropilic alcohol, were investigated. The thickness of Al anodic oxide layers was 5 {+-} 1{mu}, 10 {+-} 1{mu}, for Al sheet, respectively 5 {+-} 1{mu}, 10 {+-} 1{mu}, 15 {+-} 1{mu}, for Al wire. To establish the influence of anodic film formation on mechanical parameters, measurements of breaking strength and relative elongation at break for anodized and non-anodized Al conductors, were made. In order to electrically characterize the anodic films, the breakdown voltage for different curvature radii of the conductor, between 50 - 12.5 mm, were measured. The influence of the layer thickness, as well as of the cracking during its bending, was established, too. To test the thermal resistance of the insulating anodic films, the Al conductors were subjected to 1 - 5 cyclic thermal shocks at 500 C. After the experimentals were done, it was found that Al anodic films of 5 {+-} 1{mu} may assure a breakdown voltage of minimum 200 V, for coils having a curvature radius greater than 12.5 mm and operating temperatures up to 500 C. From mechanical point of view, anodic oxide film determines a relatively reinforcing of Al conductor, but it doesn`t influence its functional properties. (orig.)

Growth of anodic oxide films on oxygen-containing niobium

Energy Technology Data Exchange (ETDEWEB)

Habazaki, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan)]. E-mail: habazaki@eng.hokudai.ac.jp; Ogasawara, T. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Konno, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Shimizu, K. [University Chemical Laboratory, Keio University, Yokohama 223-8522 (Japan); Asami, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Saito, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Nagata, S. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Skeldon, P. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom); Thompson, G.E. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)

2005-09-20

The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.

Effect of crystallographic orientation on the anodic formation of nanoscale pores/tubes in TiO 2 films

Science.gov (United States)

Kalantar-zadeh, K.; Sadek, A. Z.; Zheng, H.; Partridge, J. G.; McCulloch, D. G.; Li, Y. X.; Yu, X. F.; Wlodarski, W.

2009-10-01

Self-organized nanopores and nanotubes have been produced in thin films of titanium (Ti) prepared using filtered cathodic vacuum arc (FCVA), DC- and RF-sputter deposition systems. The anodization process was performed using a neutral electrolyte containing fluoride ions with an applied potential between 2 and 20 V (for clarity the results are only presented for 5 V). Scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques were used to characterise the films. It was found that the crystallographic orientation of the Ti films played a significant role in determining whether pores or tubes were formed during the anodic etching process.

Mechanism of manganese (mono and di) telluride thin-film formation and properties

Science.gov (United States)

Sharma, Raj Kishore; Singh, Gurmeet; Shul, Yong Gun; Kim, Hansung

2007-03-01

Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO 4 and TeO 2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn 2+, Te 4+ and combined Mn 2+ and Te 4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

Excitation of anodized alumina films with a light source

DEFF Research Database (Denmark)

Aggerbeck, Martin; Canulescu, Stela; Rechendorff, K.

Optical properties of anodized aluminium alloys were determined by optical diffuse reflectance spectroscopy of such films. Samples with different concentrations of dopants were excited with a white-light source combined with an integrating sphere for fast determination of diffuse reflectance....... The UV-VIS reflectance of Ti-doped anodized aluminium films was measured over the wavelength range of 200 nm to 900 nm. Titanium doped-anodized aluminium films with 5-15 wt% Ti were characterized. Changes in the diffuse light scattering of doped anodized aluminium films, and thus optical appearance......, with doping are discussed. Using the Kubelka-Munk model on the diffuse reflectance spectra of such films, the bandgap Eg of the oxide alloys can be determined....

Hydrothermally formed three-dimensional nanoporous Ni(OH)2 thin-film supercapacitors.

Science.gov (United States)

Yang, Yang; Li, Lei; Ruan, Gedeng; Fei, Huilong; Xiang, Changsheng; Fan, Xiujun; Tour, James M

2014-09-23

A three-dimensional nanoporous Ni(OH)2 thin-film was hydrothermally converted from an anodically formed porous layer of nickel fluoride/oxide. The nanoporous Ni(OH)2 thin-films can be used as additive-free electrodes for energy storage. The nanoporous layer delivers a high capacitance of 1765 F g(-1) under three electrode testing. After assembly with porous activated carbon in asymmetric supercapacitor configurations, the devices deliver superior supercapacitive performances with capacitance of 192 F g(-1), energy density of 68 Wh kg(-1), and power density of 44 kW kg(-1). The wide working potential window (up to 1.6 V in 6 M aq KOH) and stable cyclability (∼90% capacitance retention over 10,000 cycles) make the thin-film ideal for practical supercapacitor devices.

GeO2 Thin Film Deposition on Graphene Oxide by the Hydrogen Peroxide Route: Evaluation for Lithium-Ion Battery Anode.

Science.gov (United States)

Medvedev, Alexander G; Mikhaylov, Alexey A; Grishanov, Dmitry A; Yu, Denis Y W; Gun, Jenny; Sladkevich, Sergey; Lev, Ovadia; Prikhodchenko, Petr V

2017-03-15

A peroxogermanate thin film was deposited in high yield at room temperature on graphene oxide (GO) from peroxogermanate sols. The deposition of the peroxo-precursor onto GO and the transformations to amorphous GeO 2 , crystalline tetragonal GeO 2 , and then to cubic elemental germanium were followed by electron microscopy, XRD, and XPS. All of these transformations are influenced by the GO support. The initial deposition is explained in view of the sol composition and the presence of GO, and the different thermal transformations are explained by reactions with the graphene support acting as a reducing agent. As a test case, the evaluation of the different materials as lithium ion battery anodes was carried out revealing that the best performance is obtained by amorphous germanium oxide@GO with >1000 mAh g -1 at 250 mA g -1 (between 0 and 2.5 V vs Li/Li + cathode), despite the fact that the material contained only 51 wt % germanium. This is the first demonstration of the peroxide route to produce peroxogermanate thin films and thereby supported germanium and germanium oxide coatings. The advantages of the process over alternative methodologies are discussed.

Preparation and electrochemical performance of copper foam-supported amorphous silicon thin films for rechargeable lithium-ion batteries

International Nuclear Information System (INIS)

Li Haixia; Cheng Fangyi; Zhu Zhiqiang; Bai Hongmei; Tao Zhanliang; Chen Jun

2011-01-01

Research highlights: → Amorphous Si thin films have been deposited on copper foam substrate by radio-frequency (rf) magnetron sputtering. → The as-prepared Si/Cu films with interconnected 3-dimensional structure are employed as anode materials of rechargeable lithium-ion batteries, showing that the electrode properties are greatly affected by the deposition temperature. → The film electrode deposited at an optimum temperature of 300 deg. C delivers a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. → The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm 2 /s. → The combination of rf magnetron sputtering and cooper foam substrate is an efficient route to prepare amorphous Si films with high capacity and cyclability due to the efficient ionic diffusion and interface contact with a good conductive current collector. - Abstract: Amorphous Si thin films, which have been deposited on copper foam by radio-frequency (rf) magnetron sputtering, are employed as anode materials of rechargeable lithium-ion batteries. The morphologies and structures of the as-prepared Si thin films are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). Electrochemical performance of lithium-ion batteries with the as-prepared Si films as the anode materials is investigated by cyclic voltammetry and charge-discharge measurements. The results show that the electrode properties of the prepared amorphous Si films are greatly affected by the deposition temperature. The film electrode deposited at an optimum temperature of 300 deg. C can deliver a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm

Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes.

Science.gov (United States)

Kim, Ji Young; Kim, A-Young; Liu, Guicheng; Woo, Jae-Young; Kim, Hansung; Lee, Joong Kee

2018-03-14

An amorphous SiO 2 (a-SiO 2 ) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO 2 . The thickness of the a-SiO 2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO 2 passivation layer is converted into lithium silicate (Li 4 SiO 4 ), and the portion of Li 4 SiO 4 depends on the thickness of a-SiO 2 . A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm -2 with flat voltage profiles, when an a-SiO 2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10 -14 cm 2 s -1 ) after cycling in a Li-S battery. The existence of the Li 4 SiO 4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

Combined micro-droplet and thin-film-assisted pre-concentration of lead traces for on-line monitoring using anodic stripping voltammetry.

Science.gov (United States)

Belostotsky, Inessa; Gridin, Vladimir V; Schechter, Israel; Yarnitzky, Chaim N

2003-02-01

An improved analytical method for airborne lead traces is reported. It is based on using a Venturi scrubber sampling device for simultaneous thin-film stripping and droplet entrapment of aerosol influxes. At least threefold enhancement of the lead-trace pre-concentration is achieved. The sampled traces are analyzed by square-wave anodic stripping voltammetry. The method was tested by a series of pilot experiments. These were performed using contaminant-controlled air intakes. Reproducible calibration plots were obtained. The data were validated by traditional analysis using filter sampling. LODs are comparable with the conventional techniques. The method was successfully applied to on-line and in situ environmental monitoring of lead.

Combined micro-droplet and thin-film-assisted pre-concentration of lead traces for on-line monitoring using anodic stripping voltammetry

Energy Technology Data Exchange (ETDEWEB)

Belostotsky, Inessa; Gridin, Vladimir V.; Schechter, Israel; Yarnitzky, Chaim N. [Department of Chemistry, Technion Israel Institute of Technology, 32000, Haifa (Israel)

2003-02-01

An improved analytical method for airborne lead traces is reported. It is based on using a Venturi scrubber sampling device for simultaneous thin-film stripping and droplet entrapment of aerosol influxes. At least threefold enhancement of the lead-trace pre-concentration is achieved. The sampled traces are analyzed by square-wave anodic stripping voltammetry. The method was tested by a series of pilot experiments. These were performed using contaminant-controlled air intakes. Reproducible calibration plots were obtained. The data were validated by traditional analysis using filter sampling. LODs are comparable with the conventional techniques. The method was successfully applied to on-line and in situ environmental monitoring of lead. (orig.)

Effects of Alclad Layer and Anodizing Time on Sulfuric Acid Anodizing and Film Properties of 2E12 Aluminum Alloy

Directory of Open Access Journals (Sweden)

CHEN Gao-hong

2017-07-01

Full Text Available Alclad and unclad 2E12 aerospace aluminum alloy were treated by sulfuric acid anodic oxidation. The effects of alclad layer and anodizing time on the anodization behaviour and corrosion resistance of anodic oxide layer on 2E12 aluminum alloy were studied. Surface and cross-section morphology of anodic oxide films were observed by scanning electron microscopy. The electrochemical properties of anodic oxide films were analyzed by potentiodynamic polarization curve and electrochemical impedance spectroscopy. The results show that the protective anodic oxide layers are formed on alclad and unclad 2E12 aluminum alloy. The film thickness increases with anodizing time extending. The copper rich second phase particles lead to more cavity defects and even micro cracks on anodic oxide films of unclad 2E12 aluminum alloy. The anodic oxide films on alclad 2E12 aluminum alloy are thicker and have fewer cavity defects, resulting in better corrosion resistance. The films obtained after 30min and 45min anodic oxidation treatment exhibit lower corrosion current and higher impedance of the porous layer than other anodizing time.

Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

Energy Technology Data Exchange (ETDEWEB)

Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

1996-01-08

This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

EFFECT OF PHOSPHORIC ACID CONCENTRATION AND ANODIZING TIME ON THE PROPERTIES OF ANODIC FILMS ON TITANIUM

Directory of Open Access Journals (Sweden)

DIMAS L. TORRES

2015-07-01

Full Text Available In this study, it was investigated the influence of electrolyte concentration and anodizing time on the electrochemical behaviour and morphology of anodic films formed on commercially pure Ti. Electrochemical methods and surface analyses were used to characterize the films. It was found that the electrolyte concentration and anodizing time affect the growth and protective characteristics of films in a physiologic medium. It was possible to observe their non-uniformity on Ti substrates under the tested conditions. In potentiodynamic profiles, it was observed that passivation current values are affected by an anodizing time increase. Variations in impedance spectra were associated with an increase of defects within the film.

Monodispersed macroporous architecture of nickel-oxide film as an anode material for thin-film lithium-ion batteries

International Nuclear Information System (INIS)

Wu, Mao-Sung; Lin, Ya-Ping

2011-01-01

A nickel-oxide film with monodispersed open macropores was prepared on a stainless-steel substrate by electrophoretic deposition of a polystyrene-sphere monolayer followed by anodic electrodeposition of nickel oxy-hydroxide. The deposited films convert to cubic nickel oxide after annealing at 400 o C for 1 h. Galvanostatic charge and discharge results indicate that the nickel-oxide film with monodispersed open macropores is capable of delivering a higher capacity than the bare nickel-oxide film, especially in high-rate charge and discharge processes. The lithiation capacity of macroporous nickel oxide reaches 1620 mA h g -1 at 1 C current discharge and decreases to 990 mA h g -1 at 15 C current discharge. The presence of monodispersed open macropores in the nickel-oxide film might facilitate the electrolyte penetration, diffusion, and migration. Electrochemical reactions between nickel oxide and lithium ions are therefore markedly improved by this tailored film architecture.

Self-assembled three-dimensional and compressible interdigitated thin-film supercapacitors and batteries

Science.gov (United States)

Nyström, Gustav; Marais, Andrew; Karabulut, Erdem; Wågberg, Lars; Cui, Yi; Hamedi, Mahiar M.

2015-01-01

Traditional thin-film energy-storage devices consist of stacked layers of active films on two-dimensional substrates and do not exploit the third dimension. Fully three-dimensional thin-film devices would allow energy storage in bulk materials with arbitrary form factors and with mechanical properties unique to bulk materials such as compressibility. Here we show three-dimensional energy-storage devices based on layer-by-layer self-assembly of interdigitated thin films on the surface of an open-cell aerogel substrate. We demonstrate a reversibly compressible three-dimensional supercapacitor with carbon nanotube electrodes and a three-dimensional hybrid battery with a copper hexacyanoferrate ion intercalating cathode and a carbon nanotube anode. The three-dimensional supercapacitor shows stable operation over 400 cycles with a capacitance of 25 F g−1 and is fully functional even at compressions up to 75%. Our results demonstrate that layer-by-layer self-assembly inside aerogels is a rapid, precise and scalable route for building high-surface-area 3D thin-film devices. PMID:26021485

Electrostatic spray deposition of porous SnO₂/graphene anode films and their enhanced lithium-storage properties.

Science.gov (United States)

Jiang, Yinzhu; Yuan, Tianzhi; Sun, Wenping; Yan, Mi

2012-11-01

Porous SnO₂/graphene composite thin films are prepared as anodes for lithium ion batteries by the electrostatic spray deposition technique. Reticular-structured SnO₂ is formed on both the nickel foam substrate and the surface of graphene sheets according to the scanning electron microscopy (SEM) results. Such an assembly mode of graphene and SnO₂ is highly beneficial to the electrochemical performance improvement by increasing the electrical conductivity and releasing the volume change of the anode. The novel engineered anode possesses 2134.3 mA h g⁻¹ of initial discharge capacity and good capacity retention of 551.0 mA h g⁻¹ up to the 100th cycle at a current density of 200 mA g⁻¹. This anode also exhibits excellent rate capability, with a reversible capacity of 507.7 mA h g⁻¹ after 100 cycles at a current density of 800 mA g⁻¹. The results demonstrate that such a film-type hybrid anode shows great potential for application in high-energy lithium-ion batteries.

The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films

Science.gov (United States)

Ren, Jianjun; Zuo, Yu

2012-11-01

The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films were studied. The voltage-time response for galvanostatic anodization of aluminum in malonic acid solution exhibits a conventional three-stage feature but the formation voltage is much higher. With the increase of electrolyte concentration, the electrolyte viscosity increases simultaneously and the high viscosity decreases the film growth rate. With the concentration increase of the malonic acid electrolyte, the critical current density that initiates local "burning" on the sample surface decreases. For malonic acid anodization, the field-assisted dissolution on the oxide surface is relatively weak and the nucleation of pores is more difficult, which results in greater barrier layer thickness and larger cell dimension. The embryo of the porous structure of anodic film has been created within the linear region of the first transient stage, and the definite porous structure has been established before the end of the first transient stage. The self-ordering behavior of the porous film is influenced by the electrolyte concentration, film thickness and the applied current density. Great current density not only improves the cell arrangement order but also brings about larger cell dimension.

Anodic oxidation of commercially pure titanium for purification of polluted water

Science.gov (United States)

Benkafada, Faouzia; Kerdoud, Djahida; Bouchoucha, Ali

2018-05-01

Anodisation of pure titanium has been carried out in sulphuric acid solution at potentials ranging from 40 V to 5 days. We studied the parameters influencing the anodic deposition such as acid concentration and anodic periods. Anodic oxides thin films were characterized by X-ray diffraction, cyclic polarization and electrochemical impedance spectroscopy. The I-V curves and electrochemical impedance measurements were carried out in 0.1 N NaOH solution. The results indicated that although the thin films obtained by anodic oxidation are nonstoichiometric, they have an electric behaviour like n-type semiconducting material.

Dissolution of anodic zirconium dioxide films in aqueous media

International Nuclear Information System (INIS)

Merati, A.; Cox, B.

1999-01-01

Zirconium with a low thermal neutron cross section, good corrosion resistance in high-temperature water, and high thermal conductivity is an ideal material for nuclear reactors. Its good resistance to water and steam at reactor temperatures is of the greatest interest to nuclear fuel designers. Dissolution of zirconium dioxide (ZrO 2 ) films in aggressive media was investigated. The extent of uniform and localized dissolution was measured by ultraviolet-visible (UV-VIS) spectrometry and an alternating current (AC) impedance test, respectively. Scanning electron microscopy (SEM) showed the extent of dissolution of ZrO 2 was a function only of the fluoride ion content and pH of the medium. Cathodic polarization was used to identify the preferred sites for localized dissolution of the oxide film. In 0.1 M potassium bifluoride (KHF 2 ), both uniform thinning and local breakdown of the oxide were observed. Within the limits of the investigating techniques, no evidence of dissolution was observed in the other solutions tested: 0.5 M sulfuric acid (H 2 SO 4 ). 1.0 M nitric acid (HNO 3 ), 5 M hydrochloric acid (HCl), or 0.1 M potassium fluoride (KF). In areas around iron-containing particles, fine cracks in the anodic oxide at prior metal grain boundaries and arrays of cracks in the oxide associated with residual scratches from the initial specimen preparation were the preferred spots for localized dissolution of the oxide film. Iron precipitates immediately below the surface of the oxide layer increased the local electrical conductivity. Enrichment of iron in the oxide matrix around these precipitates during the anodization process appeared to cause prospective spots, acting as anodic sites for pH formation

Titanium nitride stamps replicating nanoporous anodic alumina films

International Nuclear Information System (INIS)

Navas, D; Sanchez, O; Asenjo, A; Jaafar, M; Baldonedo, J L; Vazquez, M; Hernandez-Velez, M

2007-01-01

Fabrication of nanostructured TiN films by magnetron sputtering using nanoporous anodic alumina films (NAAF) as substrates is reported. These hard nanostructured films could be used for pre-patterning aluminium foils and to obtain nanoporous films replicating the starting NAAF over a wide range of pore diameters and spacings. Pre-patterned Al foils are obtained by compression with pressures lower than those previously reported, then a new NAAF can be fabricated by means of only one anodization process. As an example, one of the TiN stamps was used for pre-patterning an Al foil at a pressure of 200 kg cm -2 and then it was anodized in oxalic acid solution obtaining the corresponding replica of the starting NAAF

The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

Science.gov (United States)

Polat, B Deniz; Keles, Ozgul

2015-12-01

The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

Hybrid pulse anodization for the fabrication of porous anodic alumina films from commercial purity (99%) aluminum at room temperature

International Nuclear Information System (INIS)

Chung, C K; Zhou, R X; Chang, W T; Liu, T Y

2009-01-01

Most porous anodic alumina (PAA) or anodic aluminum oxide (AAO) films are fabricated using the potentiostatic method from high-purity (99.999%) aluminum films at a low temperature of approximately 0-10 deg. C to avoid dissolution effects at room temperature (RT). In this study, we have demonstrated the fabrication of PAA film from commercial purity (99%) aluminum at RT using a hybrid pulse technique which combines pulse reverse and pulse voltages for the two-step anodization. The reaction mechanism is investigated by the real-time monitoring of current. A possible mechanism of hybrid pulse anodization is proposed for the formation of pronounced nanoporous film at RT. The structure and morphology of the anodic films were greatly influenced by the duration of anodization and the type of voltage. The best result was obtained by first applying pulse reverse voltage and then pulse voltage. The first pulse reverse anodization step was used to form new small cells and pre-texture concave aluminum as a self-assembled mask while the second pulse anodization step was for the resulting PAA film. The diameter of the nanopores in the arrays could reach 30-60 nm.

Fabrication of TiNb{sub 2}O{sub 7} thin film electrodes for Li-ion micro-batteries by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Daramalla, V. [Materials Research Centre, Indian Institute of Science, Bengalore 560012 (India); Penki, Tirupathi Rao; Munichandraiah, N. [Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bengalore 560012 (India); Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in [Materials Research Centre, Indian Institute of Science, Bengalore 560012 (India)

2016-11-15

Graphical abstract: The TiNb{sub 2}O{sub 7} thin film electrodes as anode material in Li-ion rechargeable micro-batteries are successfully demonstrated. The pulsed laser deposited TiNb{sub 2}O{sub 7} thin film electrode delivers high discharge specific capacity of 143 μAh μm{sup −1} cm{sup −2} at 50 μA cm{sup −2} current density, with 92% coulombic efficiency. The thin films are very stable in crystal structure, with good fast reversible reaction at average Li-insertion voltage 1.65 V. - Highlights: • TiNb{sub 2}O{sub 7} thin films fabricated by pulsed laser deposition. • TiNb{sub 2}O{sub 7} as anode thin films demonstrated successfully. • High discharge specific capacity with 92% coulombic efficiency. • Excellent crystal stability and good reversible reaction. - Abstract: Pulsed laser deposited TiNb{sub 2}O{sub 7} thin films are demonstrated as anode materials in rechargeable Li-ion micro-batteries. The monoclinic and chemically pure TiNb{sub 2}O{sub 7} films in different morphologies were successfully deposited at 750 °C. The single phase formation was confirmed by grazing incident X-ray diffraction, micro-Raman spectroscopy, high resolution transmission electron microscopy, field emission scanning electron microscopy and X-ray photoelectron spectroscopy. The oxygen partial pressure during the deposition significantly influenced the properties of TiNb{sub 2}O{sub 7} films. The TiNb{sub 2}O{sub 7} thin films exhibited excellent stability with fast kinetics reversible reaction. The TiNb{sub 2}O{sub 7} films showed initial discharge specific capacity of 176, 143 μAh μm{sup −1} cm{sup −2} at 30, 50 μA cm{sup −2} current densities respectively with 92% coulombic efficiency in a non-aqueous electrolyte consisting of Li{sup +} ions. The high discharge specific capacity of TiNb{sub 2}O{sub 7} thin films may be attributed to nanometer grain size with high roughness which offers high surface area for Li-diffusion during charge and discharge

A Study on Sealing Process of Anodized Al Alloy Film

Science.gov (United States)

Tsujita, Takeshi; Sato, Hiroshi; Tsukahara, Sonoko; Ishikawa, Yuuichi

Since sealing is an important process to improve the corrosion resistance in practical application of anodized aluminum, we prepared anodic oxide films on A5052 alloy in an oxalic acid bath and a sulfuric acid bath, sealed them at various conditions, and analyzed them by scanning electron microscopy, acid-dissolution examination, admittance measurements and infrared spectroscopy. The pore radius of the oxalic acid anodized film was about 5 times larger than that of sulfuric acid anodized film, while the corrosion resistance of the former showed about 2 times higher value than the latter with the same sealed state and amount of hydroxide formed by sealing process of the former was 6 times larger than the latter, respectively. Steam sealing formed dense hydroxide and boiling water sealing formed big coral-like hydroxide, whereas the corrosion resistance of the film sealed by the former showed about 1.5 times higher value than that sealed by the latter, respectively. Thus microstructure of anodic oxide films and their surface morphology after sealing process clearly depended on their anodizing solution and the sealing condition and showed obvious relation to electric and corrosive properties.

Enhanced photoelectrochemical performance of Ti-doped hematite thin films prepared by the sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Lian Xiaojuan; Yang Xin; Liu Shangjun; Xu Ying; Jiang Chunping; Chen Jinwei [College of Materials Science and Engineering, Sichuan University, No.24 South Section 1, Yihuan Road, Chengdu 610065 (China); Wang Ruilin, E-mail: rlwang26@yahoo.com.cn [College of Materials Science and Engineering, Sichuan University, No.24 South Section 1, Yihuan Road, Chengdu 610065 (China)

2012-01-15

Ti-doped {alpha}-Fe{sub 2}O{sub 3} thin films were successfully prepared on FTO substrates by the sol-gel route. Hematite film was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and energy dispersive spectrometer (EDS). The XRD data showed {alpha}-Fe{sub 2}O{sub 3} had a preferred (1 1 0) orientation which belonged to the rhombohedral system. Interestingly, the grains turned into worm-like shape after annealed at high temperature. The IPCE could reach 32.6% at 400 nm without any additional potential vs. SCE. Titanium in the lattice can affect the photo electro chemical performance positively by increasing the conductivity of the thin film. So the excited electrons and holes could live longer, rather than recombining with each other rapidly as undoped hematite. And the efficient carrier density on the Ti-doped anode surface was higher than the undoped anode, which contribute to the well PEC performance.

Deposition of fluorocarbon films by Pulsed Plasma Thruster on the anode side

International Nuclear Information System (INIS)

Zhang, Rui; Zhang, Daixian; Zhang, Fan; He, Zhen; Wu, Jianjun

2013-01-01

Fluorocarbon thin films were deposited by Pulsed Plasma Thruster at different angles on the anode side of the thruster. Density and velocity of the plasma in the plume of the Pulsed Plasma Thruster were determined using double and triple Langmuir probe apparatus respectively. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), scanning probe microscope (SPM) and UV–vis spectrometer. Low F/C ratio (0.64–0.86) fluorocarbon films are deposited. The F/C ratio decreases with angle increasing from 0 degree to 30 degree; however it turns to increase with angle increasing from 45 degree to 90 degree. The films deposited at center angles appear rougher compared with that prepared at angles beyond 45 degree. These films basically show having strong absorption properties for wavelength below 600 nm and having enhanced reflective characteristics. Due to the influence of the chemical composition and the surface morphology of the films, the optical properties of these films also show significant angular dependence.

Electrochemical characteristics of bundle-type silicon nanorods as an anode material for lithium ion batteries

International Nuclear Information System (INIS)

Nguyen, Si Hieu; Lim, Jong Choo; Lee, Joong Kee

2012-01-01

Highlights: ► A metal-assisted chemical etching technique was performed on Si thin films. ► The etching process resulted in the formation of bundle-type Si nanorods. ► The morphology of Si electrodes closely relate to electrochemical characteristics. - Abstract: In order to prepare bundle-type silicon nanorods, a silver-assisted chemical etching technique was used to modify a 1.6 μm silicon thin film, which was deposited on Cu foil by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition. The bundle-type silicon nanorods on Cu foil were employed as anodes for a lithium secondary battery, without further treatment. The electrochemical characteristics of the pristine silicon thin film anodes and the bundle-type silicon nanorod anodes are different from one another. The electrochemical performance of the bundle-type silicon nanorod anodes exceeded that of the pristine Si thin film anodes. The specific capacity of the bundle-type silicon nanorod anodes is much higher than 3000 mAh g −1 at the first charge (Li insertion) cycle. The coulombic efficiency of bundle-type silicon anodes was stable at more than 97%, and the charge capacity remained at 1420 mAh g −1 , even after 100 cycles of charging and discharging. The results from the differential voltage analysis showed a side reaction at around 0.44–0.5 V, and the specific potential of this side reaction decreased after each cycle. The apparent diffusion coefficients of the two anode types were in the range of 10 −13 –10 −16 cm 2 s −1 in the first cycle. In subsequent charge cycles, these values for the silicon thin film anodes and the silicon nanorod bundle anode were approximately 10 −12 –10 −14 and 10 −13 –10 −15 cm 2 s −1 , respectively.

Application of anodizing as a pre-treatment for nickel plating on aluminum

International Nuclear Information System (INIS)

Mehmood, M.; Ahmad, J.; Aslam, M.; Iqbal, M.; Akhtar, J.I.

2003-01-01

Effect of anodizing on subsequent electroplating of nickel on aluminum was investigated. Electroplated nickel did not exhibit any adhesion with un-anodized aluminum. Formation of a very thin anodized alumina film prior to nickel plating led to an excellent adhesion between the nickel film and the substrate. If the thickness of the alumina film increased, adhesion of electroplated nickel was significantly deteriorated and became similar to that of un-anodized bare aluminum. The study revealed that deposition proceeded through pores and defects in the insulator alumina film. These pores and defects also acted as nucleation and anchor points for nickel deposit. There was larger number of nucleation/ anchor points on thin alumina films. This provided better adhesion of nickel with the substrate as well as excellent coverage in relatively shorter times. On the other hand, very rough and poorly adherent nickel deposits formed on thick anodized films. Therefore, it may be used as precursor for producing nickel powder with controlled particle size as well as a catalyst with high specific surface area for hydrogenation and dehydrogenation reactions. (author)

Sandwiched Thin-Film Anode of Chemically Bonded Black Phosphorus/Graphene Hybrid for Lithium-Ion Battery.

Science.gov (United States)

Liu, Hanwen; Zou, Yuqin; Tao, Li; Ma, Zhaoling; Liu, Dongdong; Zhou, Peng; Liu, Hongbo; Wang, Shuangyin

2017-09-01

A facile vacuum filtration method is applied for the first time to construct sandwich-structure anode. Two layers of graphene stacks sandwich a composite of black phosphorus (BP), which not only protect BP from quickly degenerating but also serve as current collector instead of copper foil. The BP composite, reduced graphene oxide coated on BP via chemical bonding, is simply synthesized by solvothermal reaction at 140 °C. The sandwiched film anode used for lithium-ion battery exhibits reversible capacities of 1401 mAh g -1 during the 200th cycle at current density of 100 mA g -1 indicating superior cycle performance. Besides, this facile vacuum filtration method may also be available for other anode material with well dispersion in N-methyl pyrrolidone (NMP). © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.

Science.gov (United States)

Lee, Hye Ji; Noviyana, Imas; Putri, Maryane; Koo, Chang Young; Lee, Jung-A; Kim, Jeong-Joo; Jeong, Youngjun; Lee, Youngu; Lee, Hee Young

2018-02-01

IZTO20 (In0.6Zn0.2Sn0.2O1.5) ceramic target was prepared from oxide mixture of In2O3, ZnO, and SnO2 powders. IZTO20 thin films were then deposited onto glass substrate at 400 °C by DC magnetron sputtering. The average optical transmittance determined by ultraviolet-visible spectroscopy was higher than 85% for all films. The minimum resistivity of the annealed IZTO20 thin film was approximately 6.1×10-4 Ω·cm, which tended to increase with decreasing indium content. Substrate heating and annealing were found to be important parameters affecting the electrical and optical properties. An organic photovoltaic (OPV) cell was fabricated using the IZTO20 film deposited under the optimized condition as an anode electrode and the efficiency of up to 80% compared to that of a similar OPV cell using ITO film was observed. Reduction of surface roughness and electrical resistivity through annealing treatment was found to contribute to the improved efficiency of the OPV cell.

ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

Energy Technology Data Exchange (ETDEWEB)

Krämer, André; Engel, Sebastian [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Sangiorgi, Nicola [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Department of Chemical Science and Technologies, University of Rome Tor Vergata, via della Ricerca Scientifica, 00133 Rome (Italy); Sanson, Alessandra [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Bartolomé, Jose F. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Gräf, Stephan, E-mail: stephan.graef@uni-jena.de [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Müller, Frank A. [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena (Germany)

2017-03-31

Highlights: • Carbon fibres were entirely coated with thin films consisting of aligned ZnO crystals. • A Q-switched CO2 laser was utilised as radiation source. • Suitability of ZnO thin films on carbon fibres as photo anodes for DSSC was studied. - Abstract: Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I–V measurements were performed.

Solid thin film materials for use in thin film charge-coupled devices

International Nuclear Information System (INIS)

Lynch, S.J.

1983-01-01

Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Study on Buckling of Stiff Thin Films on Soft Substrates as Functional Materials

Science.gov (United States)

Ma, Teng

In engineering, buckling is mechanical instability of walls or columns under compression and usually is a problem that engineers try to prevent. In everyday life buckles (wrinkles) on different substrates are ubiquitous -- from human skin to a rotten apple they are a commonly observed phenomenon. It seems that buckles with macroscopic wavelengths are not technologically useful; over the past decade or so, however, thanks to the widespread availability of soft polymers and silicone materials micro-buckles with wavelengths in submicron to micron scale have received increasing attention because it is useful for generating well-ordered periodic microstructures spontaneously without conventional lithographic techniques. This thesis investigates the buckling behavior of thin stiff films on soft polymeric substrates and explores a variety of applications, ranging from optical gratings, optical masks, energy harvest to energy storage. A laser scanning technique is proposed to detect micro-strain induced by thermomechanical loads and a periodic buckling microstructure is employed as a diffraction grating with broad wavelength tunability, which is spontaneously generated from a metallic thin film on polymer substrates. A mechanical strategy is also presented for quantitatively buckling nanoribbons of piezoelectric material on polymer substrates involving the combined use of lithographically patterning surface adhesion sites and transfer printing technique. The precisely engineered buckling configurations provide a route to energy harvesters with extremely high levels of stretchability. This stiff-thin-film/polymer hybrid structure is further employed into electrochemical field to circumvent the electrochemically-driven stress issue in silicon-anode-based lithium ion batteries. It shows that the initial flat silicon-nanoribbon-anode on a polymer substrate tends to buckle to mitigate the lithiation-induced stress so as to avoid the pulverization of silicon anode. Spontaneously

Thin film processes II

CERN Document Server

Kern, Werner

1991-01-01

This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

Preparation of thin hexagonal highly-ordered anodic aluminum oxide (AAO) template onto silicon substrate and growth ZnO nanorod arrays by electrodeposition

Science.gov (United States)

Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Qaeed, M. A.; Bououdina, M.

2014-12-01

In this study, anodic aluminum oxide (AAO) templates of Aluminum thin films onto Ti-coated silicon substrates were prepared for growth of nanostructure materials. Hexagonally highly ordered thin AAO templates were fabricated under controllable conditions by using a two-step anodization. The obtained thin AAO templates were approximately 70 nm in pore diameter and 250 nm in length with 110 nm interpore distances within an area of 3 cm2. The difference between first and second anodization was investigated in details by in situ monitoring of current-time curve. A bottom barrier layer of the AAO templates was removed during dropping the voltage in the last period of the anodization process followed by a wet etching using phosphoric acid (5 wt%) for several minutes at ambient temperature. As an application, Zn nanorod arrays embedded in anodic alumina (AAO) template were fabricated by electrodeposition. Oxygen was used to oxidize the electrodeposited Zn nanorods in the AAO template at 700 °C. The morphology, structure and photoluminescence properties of ZnO/AAO assembly were analyzed using Field-emission scanning electron microscope (FESEM), Energy dispersive X-ray spectroscopy (EDX), Atomic force microscope (AFM), X-ray diffraction (XRD) and photoluminescence (PL).

Effects of Alclad Layer and Anodizing Time on Sulfuric Acid Anodizing and Film Properties of 2E12 Aluminum Alloy

OpenAIRE

CHEN Gao-hong; HU Yuan-sen; YU Mei; LIU Jian-hua; LI Guo-ai

2017-01-01

Alclad and unclad 2E12 aerospace aluminum alloy were treated by sulfuric acid anodic oxidation. The effects of alclad layer and anodizing time on the anodization behaviour and corrosion resistance of anodic oxide layer on 2E12 aluminum alloy were studied. Surface and cross-section morphology of anodic oxide films were observed by scanning electron microscopy. The electrochemical properties of anodic oxide films were analyzed by potentiodynamic polarization curve and electrochemical impedance ...

Parametric study of thin film evaporation from nanoporous membranes

Science.gov (United States)

Wilke, Kyle L.; Barabadi, Banafsheh; Lu, Zhengmao; Zhang, TieJun; Wang, Evelyn N.

2017-10-01

The performance and lifetime of advanced electronics are often dictated by the ability to dissipate heat generated within the device. Thin film evaporation from nanoporous membranes is a promising thermal management approach, which reduces the thermal transport distance across the liquid film while also providing passive capillary pumping of liquid to the evaporating interface. In this work, we investigated the dependence of thin film evaporation from nanoporous membranes on a variety of geometric parameters. Anodic aluminum oxide membranes were used as experimental templates, where pore radii of 28-75 nm, porosities of 0.1-0.35, and meniscus locations down to 1 μm within the pore were tested. We demonstrated different heat transfer regimes and observed more than an order of magnitude increase in dissipated heat flux by operating in the pore-level evaporation regime. The pore diameter had little effect on pore-level evaporation performance due to the negligible conduction resistance from the pore wall to the evaporating interface. The dissipated heat flux scaled with porosity as the evaporative area increased. Furthermore, moving the meniscus as little as 1 μm into the pore decreased the dissipated heat flux by more than a factor of two due to the added resistance to vapor escaping the pore. The experimental results elucidate thin film evaporation from nanopores and confirm findings of recent modeling efforts. This work also provides guidance for the design of future thin film evaporation devices for advanced thermal management. Furthermore, evaporation from nanopores is relevant to water purification, chemical separations, microfluidics, and natural processes such as transpiration.

Growth of anodic films on niobium

International Nuclear Information System (INIS)

Gomes, M.A.B.; Bulhoes, L.O.S.

1988-01-01

The analysis of the response of the galvanostatic growth of anodic films on niobium metal in aqueous solutions is shown. The first spark voltage showed a dependence upon value of current density that could be explained as the incorporation of anions into the film. (M.J.C.) [pt

Electrochemically assisted photocatalysis using nanocrystalline semiconductor thin films

Energy Technology Data Exchange (ETDEWEB)

Vinodgopal, K [Department of Chemistry, Indiana University Northwest, Gary, Indiana (United States); Kamat, Prashant V [Notre Dame Radiation Laboratory, Notre Dame, Indiana (United States)

1995-08-01

The principle and usefulness of electrochemically assisted photocatalysis has been illustrated with the examples of 4-chlorophenol and Acid Orange 7 degradation in aqueous solutions. Thin nanocrystalline semiconductor films coated on a conducting glass surface when employed as a photoelectrode in an electrochemical cell are effective for degradation of organic contaminants. The degradation rate can be greatly improved even in the absence of oxygen by applying an anodic bias to the TiO{sub 2} film electrodes. A ten-fold enhancement in the degradation rate was observed when TiO{sub 2} particles were coupled with SnO{sub 2} nanocrystallites at an applied bias potential of 0.83 V versus SCE

Porous anodic film formation on an Al-3.5 wt% Cu alloy

Energy Technology Data Exchange (ETDEWEB)

Paez, M.A.; Bustos, O.; Thompson, G.E.; Skeldon, P.; Shimizu, K.; Wood, G.C.

2000-03-01

Anodic film growth has been undertaken on an electropolished Al-3.5 wt % Cu alloy to determine the influence of copper in solid solution on the anodizing behavior. At the commencement of anodizing of the electropolished alloy, in the presence of interfacial enrichment of copper, Al{sup 3+} and Cu{sup 2+} ions egress and O{sup 2{minus}} ion ingress proceed; film growth occurs at the alloy/film interface though O{sup 2{minus}} ion ingress, with outwardly mobile Al{sup 3+} and Cu{sup 2+} ions ejected at the film/electrolyte interface, and field-assisted dissolution proceeding at the bases of pores. Oxidation of copper, in the presence of the enriched layer, is also associated with O{sub 2} gas generation, leading to development of oxygen-filled voids. As a result of significant pressures in the voids, film rupture proceeds, with electrolyte access to the alloy, dissolution of the enriched interfacial layer and re-anodizing. The consequence of such processes in the development of anodic films of increased porosity and reduced efficiency of film formation compared with anodizing of superpure aluminum under similar conditions.

Broadband THz pulse emission and transmission properties of nanostructured Pt thin films

Energy Technology Data Exchange (ETDEWEB)

Hu, Mingzhe [Department of Physics and Electronics, Liupanshui Normal University, Liupanshui, Guizhou 553004 (China); College of Electronics and Information, Guizhou University, Huaxi 550025, Guiyang, Guizhou (China); Mu, Kaijun; Zhang, Cunlin [Department of Physics, Capital Normal University, Yuquan Road 100082, Beijing (China); Gu, Haoshuang, E-mail: guhs@hubu.edu.cn [Department of Electronic Sci& Tech, Hubei University, Xueyuan Road 430062, Wuhan, Hubei (China); Ding, Zhao [College of Electronics and Information, Guizhou University, Huaxi 550025, Guiyang, Guizhou (China)

2015-10-01

The THz transmission and emitting properties of a composite metallic nanostructure, composed of Ag nanowires electrodeposited in an anodic aluminum oxide (AAO) template and a Pt thin film, were investigated by using a femtosecond pulse laser irradiation. The microstructure of the above sub-wavelength nanostructure was investigated by XRD, SEM, AFM and TEM. The results indicated that the thickness of the Pt thin film was about 200 nm and the Ag nanowire array had a sparse and random distribution inside the AAO template, with a length distribution in the range of 10–25 μm. The THz radiation properties of above sub-wavelength nanostructure indicated that the generated THz fluence from the Pt film was a magnitude of μW scale with a broadband frequency range and its subsequent transmission could be significantly improved by the better impedance matching property of the Ag nanowire embedded AAO film compared with that of the empty AAO film.

Anodic luminescence, structural, photoluminescent, and photocatalytic properties of anodic oxide films grown on niobium in phosphoric acid

Energy Technology Data Exchange (ETDEWEB)

Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia)

2015-11-15

Graphical abstract: - Highlights: • Anodic luminescence is correlated to the existence of morphological defects in the oxide. • Spectrum under spark discharging reveals only oxygen and hydrogen lines. • Oxide films formed under spark discharging are crystallized and composed of Nb{sub 2}O{sub 5}. • Photocatalytic activity and photoluminescence of Nb{sub 2}O{sub 5} films increase with time. - Abstract: This article reports on properties of oxide films obtained by anodization of niobium in phosphoric acid before and after the dielectric breakdown. Weak anodic luminescence of barrier oxide films formed during the anodization of niobium is correlated to the existence of morphological defects in the oxide layer. Small sized sparks generated by dielectric breakdown of formed oxide film cause rapid increase of luminescence intensity. The luminescence spectrum of obtained films on niobium under spark discharging is composed of continuum radiation and spectral lines caused by electronic spark discharging transitions in oxygen and hydrogen atoms. Oxide films formed before the breakdown are amorphous, while after the breakdown oxide films are partly crystalline and mainly composed of Nb{sub 2}O{sub 5} hexagonal phase. The photocatalytic activity of obtained oxide films after the breakdown was investigated by monitoring the degradation of methyl orange. Increase of the photocatalytic activity with time is related to an increase of oxygen vacancy defects in oxide films formed during the process. Also, higher concentration of oxygen vacancy defects in oxide films results in higher photoluminescence intensity.

Vanadium nitride as a novel thin film anode material for rechargeable lithium batteries

International Nuclear Information System (INIS)

Sun Qian; Fu Zhengwen

2008-01-01

Vanadium mononitride (VN) thin films have been successfully fabricated by magnetron sputtering. Its electrochemical behaviour with lithium was examined by galvanostatic cell cycling and cyclic voltammetry. The capacity of VN was found to be stable above 800 mAh g -1 after 50 cycles. By using ex situ X-ray diffraction, high-resolution transmission electron microscopy and selected area electron diffraction as well as in situ spectroelectrochemical measurements, the electrochemical reaction mechanism of VN with lithium was investigated. The reversible conversion reaction of VN into metal V and Li 3 N was revealed. The high reversible capacity and good stable cycle of VN thin film electrode made it a new promising lithium-ion storage material for future rechargeable lithium batteries

Ultrasonic Welding of Thin Alumina and Aluminum Using Inserts

Science.gov (United States)

Ishikuro, Tomoaki; Matsuoka, Shin-Ichi

This paper describes an experimental study of ultrasonic welding of thin ceramics and metals using inserts. Ultrasonic welding has enable the joining of various thick ceramics, such as Al2O3 and ZrO2, to aluminum at room temperature quickly and easily as compared to other welding methods. However, for thin ceramics, which are brittle, welding is difficult to perform without causing damage. In this study, aluminum anodized oxide with different anodizing time was used as thin alumina ceramic. Vapor deposition of aluminum alloys was used to create an effective binder layer for welding at a low pressure and within a short duration in order to prevent damage to the anodic oxide film formed with a short anodizing time. For example, ultrasonic welding of thin Al2O3/Al was accomplished under the following conditions: ultrasonic horn tip amplitude of 30µm, welding pressure of 5MPa, and required duration of 0.1s. However, since the vapor deposition film tends to exfoliate as observed in the anodic oxide film formed with a long anodizing time, welding was difficult.

Oxygen engineering of HfO{sub 2-x} thin films grown by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU-Darmstadt (Germany); Zaumseil, Peter; Schroeder, Thomas [IHP, Frankfurt, Oder (Germany)

2010-07-01

Reactive molecular beam epitaxy (R-MBE) is an ideal tool for tailoring physical properties of thin films to specific needs. For the development of cutting-edge oxides for thin film applications a precise control of oxygen defects is crucial. R-MBE in combination with rf-activated oxygen allows reproducibly growing oxide thin films with precise oxidation conditions enabling oxygen engineering. R-MBE was used to grow Hf and HfO{sub 2{+-}}{sub x} thin films with different oxidation conditions on sapphire single crystal substrates. Structural characterization was carried out using rotating anode x-ray diffraction revealing highly textured to epitaxial thin films on c-cut sapphire. Furthermore, switching of film orientation by varying the oxidation conditions was observed demonstrating the role of oxygen in the growth procedure. The investigation of electrical properties using a four probe measurement setup showed conductivities in the range of 1000 {mu}{omega}cm for oxygen deficient HfO{sub 2-x} thin films. Optical properties were investigated using a photospectrometer and additionally x-ray photoelectron spectroscopy was carried out to study the band gap and valence states. Both techniques were used to monitor the oxygen content in deficient HfO{sub 2-x} thin films. Our results demonstrate the importance of oxygen engineering even in the case of 'simple' oxides.

Pyrolyzed thin film carbon

Science.gov (United States)

Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

2010-01-01

A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

Friction behaviour of anodic oxide film on aluminum impregnated with molybdenum sulfide compounds

Energy Technology Data Exchange (ETDEWEB)

Maejima, M.; Saruwatari, K. [Fujikura Ltd., Tokyo (Japan); Takaya, M. [Faculty of Engineering, Chiba Institute of Technology 17-1, Tsudanuma 2-Chome, 275-0016, Narasino-shi Chiba (Japan)

2000-10-23

In order to improve the lubricity and wear resistance of aluminum anodic oxide films, it is necessary to ensure the film layers are dense to prevent cracking, and to harden the films as well as reduce the shear stress of the film surfaces. From this view point, lubricious, hard anodic oxide films have been studied in the past, but fully satisfactory results have yet to be realized. In this paper, we report on our study of the re-anodizing of anodic oxide film in an aqueous solution of (NH)MoS. Molybdenum sulfide and compounds filled the 20-nm diameter pores of the film, creating internal stress which compressed the film, suppressing the occurrence of cracks and reducing the friction coefficient. (orig.)

thin films

Indian Academy of Sciences (India)

microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

Fabrication of highly ordered nanoporous alumina films by stable high-field anodization

International Nuclear Information System (INIS)

Li Yanbo; Zheng Maojun; Ma Li; Shen Wenzhong

2006-01-01

Stable high-field anodization (1500-4000 A m -2 ) for the fabrication of highly ordered porous anodic alumina films has been realized in a H 3 PO 4 -H 2 O-C 2 H 5 OH system. By maintaining the self-ordering voltage and adjusting the anodizing current density, high-quality self-ordered alumina films with a controllable inter-pore distance over a large range are achieved. The high anodizing current densities lead to high-speed film growth (4-10 μm min -1 ). The inter-pore distance is not solely dependent on the anodizing voltage, but is also influenced by the anodizing current density. This approach is simple and cost-effective, and is of great value for applications in diverse areas of nanotechnology

Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

Science.gov (United States)

Chao, Tsu-An

A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

Large electrically induced height and volume changes in poly(3,4- ethylenedioxythiophene) /poly(styrenesulfonate) thin films

NARCIS (Netherlands)

Charrier, D.S.H.; Janssen, R.A.J.; Kemerink, M.

2010-01-01

We demonstrate large, partly reversible height and volume changes of thin films of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) on the anode of interdigitating gold electrodes under ambient conditions by applying an electrical bias. The height and volume changes were monitored

High power density thin film SOFCs with YSZ/GDC bilayer electrolyte

International Nuclear Information System (INIS)

Cho, Sungmee; Kim, YoungNam; Kim, Jung-Hyun; Manthiram, Arumugam; Wang Haiyan

2011-01-01

Graphical abstract: . A: Cross-sectional TEM images show a GDC single layer and YSZ/GDC bilayer electrolyte structures. As clearly observed from TEM images, the YSZ interlayer thickness varies from ∼330 nm to ∼1 μm. B: The cell with the bilayer electrolyte (YSZ ∼330 nm) doubles the overall power output at 750 deg. C compared to that achieved in the GDC single layer cell. Display Omitted Highlights: → YSZ/ GDC bilayer thin film electrolytes were deposited by a pulsed laser deposition (PLD) technique. → Thin YSZ film as a blocking layer effectively suppresses the cell voltage drop without reducing the ionic conductivity of the electrolyte layer. → The YSZ/ GDC bilayer structure presents a feasible architecture for enhancing the overall power density and enabling chemical, mechanical, and structural stability in the cells. - Abstract: Bilayer electrolytes composed of a gadolinium-doped CeO 2 (GDC) layer (∼6 μm thickness) and an yttria-stabilized ZrO 2 (YSZ) layer with various thicknesses (∼330 nm, ∼440 nm, and ∼1 μm) were deposited by a pulsed laser deposition (PLD) technique for thin film solid oxide fuel cells (TFSOFCs). The bilayer electrolytes were prepared between a NiO-YSZ (60:40 wt.% with 7.5 wt.% carbon) anode and La 0.5 Sr 0.5 CoO 3 -Ce 0.9 Gd 0.1 O 1.95 (50:50 wt.%) composite cathode for anode-supported single cells. Significantly enhanced maximum power density was achieved, i.e., a maximum power density of 188, 430, and 587 mW cm -2 was measured in a bilayer electrolyte single cell with ∼330 nm thin YSZ at 650, 700, and 750 deg. C, respectively. The cell with the bilayer electrolyte (YSZ ∼330 nm) doubles the overall power output at 750 deg. C compared to that achieved in the GDC single layer cell. This signifies that the YSZ thin film serves as a blocking layer for preventing electrical current leakage in the GDC layer and also provides chemical, mechanical, and structural integrity in the cell, which leads to the overall enhanced

The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

Science.gov (United States)

Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

2016-04-01

Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

Controlling the antibacterial activity of CuSn thin films by varying the contents of Sn

Energy Technology Data Exchange (ETDEWEB)

Kang, Yujin; Park, Juyun; Kim, Dong-Woo; Kim, Hakjun; Kang, Yong-Cheol, E-mail: yckang@pknu.ac.kr

2016-12-15

Highlights: • We deposit CuSn thin films on a Si substrate with various Cu/Sn ratio. • Antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time increased. • XPS was utilized to assign the chemical environment of CuSn thin films before and after antibacterial test. - Abstract: We investigated antibacterial activity of CuSn thin films against Gram positive Staphylococcus aureus (S. aureus). CuSn thin films with different Cu to Sn ratios were deposited on Si(100) by radio frequency (RF) magnetron sputtering method using Cu and Sn metal anodes. The film thickness was fixed at 200 nm by varying the sputtering time and RF power on the metal targets. The antibacterial test was conducted in various conditions such as different contact times and Cu to Sn ratios in the CuSn films. The antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time between the film and bacteria suspension increased execpt in the case of CuSn-83. The oxidation states of Cu and Sn and the chemical composition of CuSn thin films before and after the antibacterial test were investigated by X-ray photoelectron spectroscopy (XPS). When the contact time was fixed, the Cu species was further oxidized as the RF power on Cu target increased. The intensity of Sn 3d decreased with increasing Cu ratio. When the sample was fixed, the peak intensity of Sn 3d decreased as the contact time increased due to the permeation of Sn into the cell.

Ceramic Composite Thin Films

Science.gov (United States)

Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

International Nuclear Information System (INIS)

Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

2012-01-01

A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

Study of LiNiVO{sub 4} thin films used as anodes in lithium micro-batteries; Etude de couches minces de type LiNiVO{sub 4} utilisables en tant qu'electrode negative dans des microbatteries au lithium

Energy Technology Data Exchange (ETDEWEB)

Reddy, V.

2003-03-01

Since fifteen years, considerable effort has been invested in developing thin film solid state micro-batteries as possible integrated components in microelectronics. The recent technological improvement concerning miniaturized systems opens a large field of applications for the future use of micro-batteries. LiNiVO{sub 4} thin films are promising materials as anodes for lithium micro-batteries. All the thin films have been prepared by radio-frequency magnetron sputtering using a LiNiVO{sub 4} target. The discharge gas was either pure argon or a mixture of argon and oxygen. We have studied the influence of some experimental parameters such as the oxygen partial pressure, the sputtering power, the target-substrate distance, the total pressure and the substrate temperature on the composition, the microstructure and the electrochemical properties. The chemical composition of the thin films has been determined by Rutherford backscattering spectroscopy combined with nuclear reaction analysis. Among all experimental parameters investigated, only the partial pressure of oxygen has a considerable influence on the thin film composition. Auger spectroscopy has revealed a good homogeneity of the thin films. X-ray diffraction shows that the as-deposited thin films are amorphous. The near-stoichiometric composition Li{sub 1.12}NiV{sub 1.02}O{sub 4}.11 has highlighted good electrochemical properties in the potential range [3 V - 0.02 V]. This particular composition displays a high capacity of 1000 mAh/g which is enhanced when the film is annealed at 300 degrees C. (author)

Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

Science.gov (United States)

Hua, Lei; Liu, Jian-hua; Li, Song-mei; Yu, Mei; Wang, Lei; Cui, Yong-xin

2015-03-01

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The anodic oxidation was performed at 25°C and a constant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the approximate ranges of 10-20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.

Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

International Nuclear Information System (INIS)

Park, Y.; Hirose, Y.; Fukumura, T.; Hasegawa, T.; Nakao, S.; Xu, J.

2014-01-01

We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w Bi ) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ F  = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L ϕ ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w Bi and t smaller than λ F showed low dimensional electronic behavior at low temperatures where L ϕ (T) exceed w Bi or t

Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

The preparation and corrosion resistance of Ce and Nd modified anodic films on aluminum

International Nuclear Information System (INIS)

Li Qizheng; Tang Yuming; Zuo Yu

2010-01-01

Rare earth element Ce and Nd modified anodic films were prepared on aluminum surface by a relatively simple method: the aluminum samples were first immersed in Ni(NO 3 ) 2 solutions containing Ce or Nd salts at 90 deg. C, then were dried and anodized. The contents of Ce or Nd in the anodic films were from 0.5% to 0.9%, and about 4-5% Ni was also introduced in the films. The modified anodic films were more compact with much smaller pores and increased hardness. In neutral, acidic and basic NaCl solutions, the rare earth modified films showed obviously improved corrosion resistance. The Ce modified films showed better corrosion resistance than Nd modified films. The cracking resistance of the films under heating was also improved.

Polyethylene oxide film coating enhances lithium cycling efficiency of an anode-free lithium-metal battery.

Science.gov (United States)

Assegie, Addisu Alemayehu; Cheng, Ju-Hsiang; Kuo, Li-Ming; Su, Wei-Nien; Hwang, Bing-Joe

2018-03-29

The practical implementation of an anode-free lithium-metal battery with promising high capacity is hampered by dendrite formation and low coulombic efficiency. Most notably, these challenges stem from non-uniform lithium plating and unstable SEI layer formation on the bare copper electrode. Herein, we revealed the homogeneous deposition of lithium and effective suppression of dendrite formation using a copper electrode coated with a polyethylene oxide (PEO) film in an electrolyte comprising 1 M LiTFSI, DME/DOL (1/1, v/v) and 2 wt% LiNO3. More importantly, the PEO film coating promoted the formation of a thin and robust SEI layer film by hosting lithium and regulating the inevitable reaction of lithium with the electrolyte. The modified electrode exhibited stable cycling of lithium with an average coulombic efficiency of ∼100% over 200 cycles and low voltage hysteresis (∼30 mV) at a current density of 0.5 mA cm-2. Moreover, we tested the anode-free battery experimentally by integrating it with an LiFePO4 cathode into a full-cell configuration (Cu@PEO/LiFePO4). The new cell demonstrated stable cycling with an average coulombic efficiency of 98.6% and capacity retention of 30% in the 200th cycle at a rate of 0.2C. These impressive enhancements in cycle life and capacity retention result from the synergy of the PEO film coating, high electrode-electrolyte interface compatibility, stable polar oligomer formation from the reduction of 1,3-dioxolane and the generation of SEI-stabilizing nitrite and nitride upon lithium nitrate reduction. Our result opens up a new route to realize anode-free batteries by modifying the copper anode with PEO to achieve ever more demanding yet safe interfacial chemistry and control of dendrite formation.

Effect of Solution Temperature for Al Alloy Anodizing on Cavitation Characteristics

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung-Jun [Kunsan National University, Kunsan (Korea, Republic of); Lee, Jung Hyung; Kim, Seong Jong [Mokpo National Maritime University, Haeyangdaehak-ro 91, Mokpo (Korea, Republic of)

2015-06-15

The commercialization of aluminum had been delayed than other metals because of its high oxygen affinity. Anodizing is a process in which oxide film is formed on the surface of a valve metal in an electrolyte solution by anodic oxidation reaction. Aluminum has thin oxide film on surface but the oxide film is inhomogeneous having a thickness only in the range of several nanometers. Anodizing process increases the thickness of the oxide film significantly. In this study, porous type oxide film was produced on the surface of aluminum in sulfuric acid as a function of electrolyte temperature, and the optimum condition were determined for anodizing film to exhibit excellent cavitation resistance in seawater environment. The result revealed that the oxide film formed at 10 ℃ represented the highest cavitation resistance, while the oxide film formed at 15 ℃ showed the lowest resistance to cavitation in spite of its high hardness.

Ultra-thin fluoropolymer buffer layer as an anode stabilizer of organic light emitting devices

International Nuclear Information System (INIS)

Yang, Nam Chul; Lee, Jaeho; Song, Myung-Won; Ahn, Nari; Kim, Mu-Hyun; Lee, Songtaek; Chin, Byung Doo

2007-01-01

We have investigated the effect of thin fluoro-acrylic polymer as an anode stabilizer on the lifetime of an organic light emitting device (OLED). Surface chemical properties of commercial fluoropolymer, FC-722 (Fluorad(TM) of 3M), on indium-tin oxide (ITO) were characterized by x-ray photoemission spectroscopy. An OLED with 1 nm thick fluoropolymeric film showed identical brightness and efficiency behaviour and improved operational stability compared with the reference device with UV-O 3 treated ITO. The improvement in the lifetime was accompanied by the suppression of the voltage increase at the initial stage of constant-current driving, which can be attributed to the action of the FC-722 layer by smoothing the ITO surface. Fluoropolymer coating, therefore, improves the lifetime of the small molecular OLED by the simple and reliable anode-stabilizing process

Incorporation of transition metal ions and oxygen generation during anodizing of aluminium alloys

International Nuclear Information System (INIS)

Habazaki, H.; Konno, H.; Shimizu, K.; Nagata, S.; Skeldon, P.; Thompson, G.E.

2004-01-01

Enrichment of nickel at the alloy/film interface and incorporation of nickel species into the anodic film have been examined for a sputtering-deposited Al-1.2at.%Ni alloy in order to assist understanding of oxygen generation in barrier anodic alumina films. Anodizing of the alloy proceeds in two stages similarly to other dilute aluminium alloys, for example Al-Cr and Al-Cu alloys, where the Gibbs free energies per equivalent for formation of alloying element oxide exceeds the value for alumina. In the first stage, a nickel-free alumina film is formed, with nickel enriching in an alloy layer, 2 nm thick, immediately beneath the anodic oxide film. In the second stage, nickel atoms are oxidized together with aluminium, with oxygen generation forming gas bubbles within the anodic oxide film. This stage commences after accumulation of about 5.4 x 10 15 nickel atoms cm -2 in the enriched alloy layer. Oxygen generation also occurs when a thin layer of the alloy, containing about 2.0 x 10 19 nickel atoms m -2 , on electropolished aluminium, is completely anodized, contrasting with thin Al-Cr and Al-Cu alloy layers on electropolished aluminium, for which oxygen generation is essentially absent. A mechanism of oxygen generation, based on electron impurity levels of amorphous alumina and local oxide compositions, is discussed in order to explain the observations

NMR characterization of thin films

Science.gov (United States)

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

Science.gov (United States)

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device

International Nuclear Information System (INIS)

Umar, Z.A.; Rawat, R.S.; Tan, K.S.; Kumar, A.K.; Ahmad, R.; Hussain, T.; Kloc, C.; Chen, Z.; Shen, L.; Zhang, Z.

2013-01-01

Highlights: •The energetic ions and electron beams are used to synthesize TiC x /SiC/a-C:H films. •As-deposited crystalline and hard nanocomposite TiC x /SiC/a-C:H films are synthesized. •Very high average deposition rates of 68 nm/shot are achieved using dense plasma focus. •The maximum hardness of 22 GPa is achieved at the surface of the film. -- Abstract: Thin films of TiC x /SiC/a-C:H were synthesized on Si substrates using a complex mix of high energy density plasmas and instability accelerated energetic ions of filling gas species, emanated from hot and dense pinched plasma column, in dense plasma focus device. The conventional hollow copper anode of Mather type plasma focus device was replaced by solid titanium anode for synthesis of TiC x /SiC/a-C:H nanocomposite thin films using CH 4 :Ar admixture of (1:9, 3:7 and 5:5) for fixed 20 focus shots as well as with different number of focus shots with fixed CH 4 :Ar admixture ratio 3:7. XRD results showed the formation of crystalline TiC x /SiC phases for thin film synthesized using different number of focus shots with CH 4 :Ar admixture ratio fixed at 3:7. SEM results showed that the synthesized thin films consist of nanoparticle agglomerates and the size of agglomerates depended on the CH 4 :Ar admixture ratio as well as on the number of focus shots. Raman analysis showed the formation of polycrystalline/amorphous Si, SiC and a-C for different CH 4 :Ar ratio as well as for different number of focus shots. The XPS analysis confirmed the formation of TiC x /SiC/a-C:H composite thin film. Nanoindentation results showed that the hardness and elastic modulus values of composite thin films increased with increasing number of focus shots. Maximum values of hardness and elastic modulus at the surface of the composite thin film were found to be about 22 and 305 GPa, respectively for 30 focus shots confirming the successful synthesis of hard composite TiC x /SiC/a-C:H coatings

Metal ion analysis in contaminated water samples using anodic stripping voltammetry and a nanocrystalline diamond thin-film electrode

International Nuclear Information System (INIS)

Sonthalia, Prerna; McGaw, Elizabeth; Show, Yoshiyuki; Swain, Greg M.

2004-01-01

Boron-doped nanocrystalline diamond thin-film electrodes were employed for the detection and quantification of Ag (I), Cu (II), Pb (II), Cd (II), and Zn (II) in several contaminated water samples using anodic stripping voltammetric (ASV). Diamond is an alternate electrode that possesses many of the same attributes as Hg and, therefore, appears to be a viable material for this electroanalytical measurement. The nanocrystalline form has been found to perform slightly better than the more conventional microcrystalline form of diamond in this application. Differential pulse voltammetry (DPASV) was used to detect these metal ions in lake water, well water, tap water, wastewater treatment sludge, and soil. The electrochemical results were compared with data from inductively coupled plasma mass spectrometric (ICP-MS) and or atomic absorption spectrometric (AAS) measurements of the same samples. Diamond is shown to function well in this electroanalytical application, providing a wide linear dynamic range, a low limit of quantitation, excellent response precision, and good response accuracy. For the analysis of Pb (II), bare diamond provided a response nearly identical to that obtained with a Hg-coated glassy carbon electrode

Structural and electrochemical analysis of chemically synthesized microcubic architectured lead selenide thin films

Science.gov (United States)

Bhat, T. S.; Shinde, A. V.; Devan, R. S.; Teli, A. M.; Ma, Y. R.; Kim, J. H.; Patil, P. S.

2018-01-01

The present work deals with the synthesis of lead selenide (PbSe) thin films by simple and cost-effective chemical bath deposition method with variation in deposition time. The structural, morphological, and electrochemical properties of as-deposited thin films were examined using characterization techniques such as X-ray diffraction spectroscopy (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy. XRD reveals formation of rock salt phase cubic structured PbSe. FE-SEM images show the formation of microcubic structured morphology. The existence of the PbSe is confirmed from the XPS analysis. On the other hand, CV curves show four reaction peaks corresponding to oxidation [PbSe and Pb(OH)2] and reduction (PbO2 and Pb(OH)2) at the surface of PbSe thin films. The PbSe:2 sample deposited for 80 min. shows maximum specific capacitance of 454 ± 5 F g- 1 obtained at 0.25 mA cm- 2 current density. The maximum energy density of 69 Wh kg- 1 was showed by PbSe:2 electrode with a power density of 1077 W kg- 1. Furthermore, electrochemical impedance studies of PbSe:2 thin film show 80 ± 3% cycling stability even after 500 CV cycles. Such results show the importance of microcubic structured PbSe thin film as an anode in supercapacitor devices.

Handbook of thin film technology

CERN Document Server

Frey, Hartmut

2015-01-01

“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

Rare Earth Oxide Thin Films

CERN Document Server

Fanciulli, Marco

2007-01-01

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

Thin-film solar cells

International Nuclear Information System (INIS)

Aberle, Armin G.

2009-01-01

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

International Nuclear Information System (INIS)

Watanabe, S.

1984-01-01

The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

Effect of temperature on the anodizing process of aluminum alloy AA 5052

Science.gov (United States)

Theohari, S.; Kontogeorgou, Ch.

2013-11-01

The effect of temperature (10-40 °C) during the anodizing process of AA 5052 for 40 min in 175 g/L sulfuric acid solution at constant voltage (15 V) was studied in comparison with pure aluminum. The incorporated magnesium species in the barrier layer result in the further increase of the minimum current density passed during anodizing, as the temperature increases, by about 42% up to 30 °C and then by 12% up to 40 °C. Then during the anodizing process for 40 min a blocking effect on oxide film growth was gradually observed as the temperature increased until 30 °C. The results of EDAX analysis on thick films reveal that the mean amount of the magnesium species inside the film is about 50-70% less than that in the bulk alloy, while it is higher at certain locations adjacent to the film surface at 30 °C. The increase of anodizing temperature does not influence the porosity of thin films (formed for short times) on pure aluminum, while it reduces it on the alloy. At 40 °C the above mentioned blocking effects disappear. It means that the presence of magnesium species causes an impediment to the effect of temperature on iss, on the film thickness and on the porosity of thin films, only under conditions where film growth takes place without significant loss of the anodizing charge to side reactions.

Nitrogen and europium doped TiO2 anodized films with applications in photocatalysis

International Nuclear Information System (INIS)

Chi, Choong-Soo; Choi, Jinwook; Jeong, Yongsoo; Lee, Oh Yeon; Oh, Han-Jun

2011-01-01

Micro-arc oxidation method is a useful process for mesoporous titanium dioxide films. In order to improve the photocatalytic activity of the TiO 2 film, N-Eu co-doped titania catalyst was synthesized by micro-arc oxidation in the H 2 SO 4 /Eu(NO 3 ) 3 mixture solution. The specific surface area and the roughness of the anodic titania film fabricated in the H 2 SO 4 /Eu(NO 3 ) 3 electrolyte, were increased compared to that of the anodic TiO 2 film prepared in H 2 SO 4 solution. The absorbance response of N-Eu titania film shows a higher adsorption onset toward visible light region, and the incorporated N and Eu ions during anodization as a dopant in the anodic TiO 2 film significantly enhanced the photocatalytic activity for dye degradation. After dye decomposition test for 3 h, dye removal rates for the anodic TiO 2 film were 60.7% and 90.1% for the N-Eu doped titania film. The improvement of the photocatalytic activity was ascribed to the synergistic effects of the surface enlargement and the new electronic state of the TiO 2 band gap by N and Eu co-doping.

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Investigating the effect of sputtering conditions on the physical properties of aluminum thin film and the resulting alumina template

Science.gov (United States)

Taheriniya, Shabnam; Parhizgar, Sara Sadat; Sari, Amir Hossein

2018-06-01

To study the alumina template pore size distribution as a function of Al thin film grain size distribution, porous alumina templates were prepared by anodizing sputtered aluminum thin films. To control the grain size the aluminum samples were sputtered with the rate of 0.5, 1 and 2 Å/s and the substrate temperature was either 25, 75 or 125 °C. All samples were anodized for 120 s in 1 M sulfuric acid solution kept at 1 °C while a 15 V potential was being applied. The standard deviation value for samples deposited at room temperature but with different rates is roughly 2 nm in both thin film and porous template form but it rises to approximately 4 nm with substrate temperature. Samples with the average grain size of 13, 14, 18.5 and 21 nm respectively produce alumina templates with an average pore size of 8.5, 10, 15 and 16 nm in that order which shows the average grain size limits the average pore diameter in the resulting template. Lateral correlation length and grain boundary effect are other factors that affect the pore formation process and pore size distribution by limiting the initial current density.

Depairing critical current achieved in superconducting thin films with through-thickness arrays of artificial pinning centers

International Nuclear Information System (INIS)

Dinner, Rafael B; Wimbush, Stuart C; MacManus-Driscoll, Judith L; Blamire, Mark G; Robinson, Adam P

2011-01-01

Large area arrays of through-thickness nanoscale pores have been milled into superconducting Nb thin films via a process utilizing anodized aluminum oxide thin film templates. These pores act as artificial flux pinning centers, increasing the superconducting critical current, J c , of the Nb films. By optimizing the process conditions including anodization time, pore size and milling time, J c values approaching and in some cases matching the Ginzburg-Landau depairing current of 30 MA cm -2 at 5 K have been achieved-a J c enhancement over as-deposited films of more than 50 times. In the field dependence of J c , a matching field corresponding to the areal pore density has also been clearly observed. The effect of backfilling the pores with magnetic material has then been investigated. While backfilling with Co has been successfully achieved, the effect of the magnetic material on J c has been found to be largely detrimental compared to voids, although a distinct influence of the magnetic material in producing a hysteretic J c versus applied field behavior has been observed. This behavior has been tested for compatibility with currently proposed models of magnetic pinning and found to be most closely explained by a model describing the magnetic attraction between the flux vortices and the magnetic inclusions.

Growth of porous type anodic oxide films at micro-areas on aluminum exposed by laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Kikuchi, Tatsuya [Graduate School of Engineering, Hokkaido University, N13-W8, Kita-Ku, Sapporo 060-8628 (Japan)], E-mail: kiku@eng.hokudai.ac.jp; Sakairi, Masatoshi [Graduate School of Engineering, Hokkaido University, N13-W8, Kita-Ku, Sapporo 060-8628 (Japan); Takahashi, Hideaki [Asahikawa National College of Technology, Syunkohdai, 2-2, 1-6, Asahikawa 071-8142 (Japan)

2009-11-30

Aluminum covered with pore-sealed anodic oxide films was irradiated with a pulsed Nd-YAG laser to remove the oxide film at micro-areas. The specimen was re-anodized for long periods to examine the growth of porous anodic oxide films at the area where substrate had been exposed by measuring current variations and morphological changes in the oxide during the re-anodizing. The chemical dissolution resistance of the pore-sealed anodic oxide films in an oxalic acid solution was also examined by measuring time-variations in rest potentials during immersion. The resistance to chemical dissolution of the oxide film became higher with increasing pore-sealing time and showed higher values at lower solution temperatures. During potentiostatic re-anodizing at five 35-{mu}m wide and 4-mm long lines for 72 h after the film was removed the measured current was found to increase linearly with time. Semicircular columnar-shaped porous type anodic oxide was found to form during the re-anodizing at the laser-irradiated area, and was found to grow radially, thus resulting in an increase in the diameter. After long re-anodizing, the central and top parts of the oxide protruded along the longitudinal direction of the laser-irradiated area. The volume expansion during re-anodizing resulted in the formation of cracks, parallel to the lines, in the oxide film formed during the first anodizing.

Dual-chamber/dual-anode proportional counter incorporating an intervening thin-foil solid neutron converter

International Nuclear Information System (INIS)

Boatner, Lynn A.; Neal, John S.; Blackston, Matthew A.; Kolopus, James A.; Ramey, Joanne O.

2012-01-01

A dual-chamber/dual-anode gas proportional counter utilizing thin solid 6 LiF or 10 B neutron converters coated on a 2-micon-thick Mylar film that is positioned between the two counter chambers and anodes has been designed, fabricated, and tested using a variety of fill gases—including naturally abundant helium. In this device, neutron conversion products emitted from both sides of the coated converter foil are detected—rather than having half of the products absorbed in the wall of a conventional tube-type counter where the solid neutron converter is deposited on the tube wall. Geant4-based radiation transport calculations were used to determine the optimum neutron converter coating thickness for both isotopes. Solution methods for applying these optimized-thickness coatings on a Mylar film were developed that were carried out at room temperature without any specialized equipment and that can be adapted to standard coating methods such as silk screen or ink jet printing. The performance characteristics of the dual-chamber/dual-anode neutron detector were determined for both types of isotopically enriched converters. The experimental performance of the 6 LiF-converter-based detector was described well by modeling results from Geant4. Additional modeling studies of multiple-foil/multiple-chamber/anode configurations addressed the basic issue of the relatively longer absorption range of neutrons versus the shorter range of the conversion products for 6 LiF and 10 B. Combined with the experimental results, these simulations indicate that a high-performance neutron detector can be realized in a single device through the application of these multiple-foil/solid converter, multiple-chamber detector concepts.

Structural study of anodic films formed on aluminum in nitric acid electrolyte

Energy Technology Data Exchange (ETDEWEB)

Yakovleva, N.M.; Anicai, L.; Yakovlev, A.N.; Dima, L.; Khanina, E.Ya.; Buda, M.; Chupakhina, E.A

2002-09-02

The paper presents the results of investigations of porous Al anodic films formed in HNO{sub 3} electrolytes carried out by means of electrochemical techniques and X-ray diffraction as well as scanning electron microscopy (SEM). It was assumed that both electrochemical formation of a porous oxide and anodic dissolution of metal take place at Al/oxide interface at the same time. The analysis of short-range order (SRO) parameters for relatively high current density, 1x10{sup 3} A/m{sup 2}, and anodizing time, 10 min, leads to the conclusion that films mainly consist of amorphous alumina with {gamma}'-Al{sub 2}O{sub 3}-like SRO and a small amount ({approx}10%) of amorphous aluminum oxyhydroxide. SEM investigation of the films revealed strong dependence of the surface relief on different applied forming conditions. This marked change in the surface relief is discussed taking into account the relatively complex behavior of Al during anodization in HNO{sub 3} electrolytes, that involves both electrochemical growth and dissolution processes of anodic film associated with an electrochemical dissolution of aluminum substrate.

Structural study of anodic films formed on aluminum in nitric acid electrolyte

International Nuclear Information System (INIS)

Yakovleva, N.M.; Anicai, L.; Yakovlev, A.N.; Dima, L.; Khanina, E.Ya.; Buda, M.; Chupakhina, E.A.

2002-01-01

The paper presents the results of investigations of porous Al anodic films formed in HNO 3 electrolytes carried out by means of electrochemical techniques and X-ray diffraction as well as scanning electron microscopy (SEM). It was assumed that both electrochemical formation of a porous oxide and anodic dissolution of metal take place at Al/oxide interface at the same time. The analysis of short-range order (SRO) parameters for relatively high current density, 1x10 3 A/m 2 , and anodizing time, 10 min, leads to the conclusion that films mainly consist of amorphous alumina with γ'-Al 2 O 3 -like SRO and a small amount (∼10%) of amorphous aluminum oxyhydroxide. SEM investigation of the films revealed strong dependence of the surface relief on different applied forming conditions. This marked change in the surface relief is discussed taking into account the relatively complex behavior of Al during anodization in HNO 3 electrolytes, that involves both electrochemical growth and dissolution processes of anodic film associated with an electrochemical dissolution of aluminum substrate

Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

Energy Technology Data Exchange (ETDEWEB)

Park, Y., E-mail: youngok@chem.s.u-tokyo.ac.jp [Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan); Hirose, Y.; Fukumura, T.; Hasegawa, T. [Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); CREST, JST, Bunkyo, Tokyo 113-0033 (Japan); Nakao, S. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); CREST, JST, Bunkyo, Tokyo 113-0033 (Japan); Xu, J. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

2014-01-13

We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w{sub Bi}) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ{sub F} = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L{sub ϕ}) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w{sub Bi} and t smaller than λ{sub F} showed low dimensional electronic behavior at low temperatures where L{sub ϕ}(T) exceed w{sub Bi} or t.

Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

International Nuclear Information System (INIS)

Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

2014-01-01

Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm 2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

Nanostructured Thin Film Synthesis by Aerosol Chemical Vapor Deposition for Energy Storage Applications

Science.gov (United States)

Chadha, Tandeep S.

Renewable energy sources offer a viable solution to the growing energy demand while mitigating concerns for greenhouse gas emissions and climate change. This has led to a tremendous momentum towards solar and wind-based energy harvesting technologies driving efficiencies higher and costs lower. However, the intermittent nature of these energy sources necessitates energy storage technologies, which remain the Achilles heel in meeting the renewable energy goals. This dissertation focusses on two approaches for addressing the needs of energy storage: first, targeting direct solar to fuel conversion via photoelectrochemical water-splitting and second, improving the performance of current rechargeable batteries by developing new electrode architectures and synthesis processes. The aerosol chemical vapor deposition (ACVD) process has emerged as a promising single-step approach for nanostructured thin film synthesis directly on substrates. The relationship between the morphology and the operating parameters in the process is complex. In this work, a simulation based approach has been developed to understand the relationship and acquire the ability of predicting the morphology. These controlled nanostructured morphologies of TiO2 , compounded with gold nanoparticles of various shapes, are used for solar water-splitting applications. Tuning of light absorption in the visible-light range along with reduced electron-hole recombination in the composite structures has been demonstrated. The ACVD process is further extended to a novel single-step synthesis of nanostructured TiO2 electrodes directly on the current collector for applications as anodes in lithium-ion batteries, mainly for electric vehicles and hybrid electric vehicles. The effect of morphology of the nanostructures has been investigated via experimental studies and electrochemical transport modelling. Results demonstrate the exceptional performance of the single crystal one-dimensional nanostructures over granular

Preparation and properties of the (Sr,BaNb2O6 thin films by using the sputtering method

Directory of Open Access Journals (Sweden)

Diao Chien-Chen

2017-01-01

Full Text Available Strontium barium niobate (Sr0.3Ba0.7Nb2O6, SBN thin films were deposited on silicon substrate by using the radio frequency magnetron sputtering and under different deposition power and time at room temperature. Surface morphology and thicknesses of the SBN thin films were characterized by field emission scanning electron microscopy. The crystallization films at different deposition power and time were analyzed by X-ray diffraction (XRD using CuKα radiation from a Rigaku rotating anode with an incident angle of 2°. The remnant polarization (Pr, saturation polarization (Ps, and minimum coercive field (Ec properties of the metal-ferroelectric-metal (MFM structure were measured using ferroelectric material test instrument. The SBN thin films deposited at 90 min and 125 W had the maximum Pr, Ps, and minimum Ec of 1.26 μC/cm2, 2.41 μC/cm2, and 201.6 kV/cm, respectively. From above results, it knows that the SBN thin films suit for application on ferroelectric random access memory (FeRAM.

Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

Science.gov (United States)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

Science.gov (United States)

Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

2018-04-09

Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

Probing anodic oxidation kinetics and nanoscale heterogeneity within TiO2 films by Conductive Atomic Force Microscopy and combined techniques

International Nuclear Information System (INIS)

Diamanti, M.V.; Souier, T.; Stefancich, M.; Chiesa, M.; Pedeferri, M.P.

2014-01-01

Graphical abstract: - Highlights: • Nanoscale anodic titanium oxides were investigated with multidisciplinary approach. • Oxide thickness was estimated via spectrophotometry and coulometry. • C-AFM identified nanometric conductivity heterogeneities, ascribed to oxide structure. • High conductivity areas exhibited local memristive behavior. - Abstract: Anodic oxidation of titanium in acid electrolytes allows to obtain a thin, compact oxide layer with thickness, structure, color, and electrical properties that vary with process parameters imposed, among which cell voltage has a key effect. Although oxidation kinetics have been investigated in several research works, a broader vision of oxide properties–including thickness and structure–still has to be achieved, especially in the case of very thin oxide films, few tens of nanometers thick. This is vital for engineered applications of nanostructured TiO 2 films, as in the field of memristive devices, where a precise control of oxide thickness, composition and structure is required to tune its electrical response. In this work, oxide films were produced on titanium with thickness ranging from few nanometers to 200 nm. Oxide thickness was estimated by coulometry and spectrophotometry. These techniques were then combined with C-AFM, which provided a deeper understanding of oxide thickness and uniformity of the metal surface and probed the presence of crystalline nano-domains within the amorphous oxide phase affecting the overall film electrical and optical properties

The electrochemical properties and mechanism of formation of anodic oxide films on Mg-Al alloys

International Nuclear Information System (INIS)

Kim, Seong Jong; Okido, Masazumi

2003-01-01

The electronchemical properties and the mechanism of formation of anodic oxide films on Mg alloys containing 0-15 mass% Al, when anodized in NaOH solution, were investigated by focusing on the effects of anodizing potential, Al content, and anodizing time. The intensity ratio of Mg(OH) 2 in the XRD analysis decreased with increasing applied potential, while that of MgO increased. Mg(OH) 2 was barely detected at 80 V, while MgO was readily detected. The anti-corrosion properties of anodized specimens at each constant potential were better than those of non-anodized specimens. The specimen anodized at an applied potential of 3 V had the best anti-corrosion property. The intensity ratio of the β phase increased with aluminum content in Mg-Al alloys. During anodizing, the active dissolution reaction occurred preferentially in β phase until about 4 min, and then the current density increased gradually until 7 min. The dissolution reaction progressed in α phase, which had a lower Al content. In the anodic polarization test in 0.017 mol·dm -3 NaCl and 0.1 mol·dm -3 Na 2 SO 4 at 298 K, the current density of Mg-15 mass% Al alloy anodized for 10 min increased, since the anodic film that forms on the α phase is a non-compacted film. The anodic film on the α phase at 30 min was a compact film as compared with that at 10 min

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

Energy Technology Data Exchange (ETDEWEB)

Xue Wenbin [Key Laboratory for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)]. E-mail: xuewb@bnu.edu.cn

2006-07-15

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

International Nuclear Information System (INIS)

Xue Wenbin

2006-01-01

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Research of the photovoltaic properties of anodized films of Sn

Science.gov (United States)

Afanasyev, D. A.; Ibrayev, N. Kh; Omarova, G. S.; Smagulov, Zh K.

2015-04-01

The results of studies of photovoltaic properties of solar cells based on porous tin oxide films, sensitized with an organic dye are presented. Porous films were prepared by electrochemical anodization of tin in alkaline electrolytes based on aqueous solution of NaOH and aqueous ammonia NH4OH. It was found that the time of anodizing of the Sn films affects on conversion efficiency of light energy into electrical energy. Increasing of the sorption time leads to an increase of the number of molecules on the surface of the porous film. For the solar cell based on tin oxide there is a strong dark current, which significantly reduces the efficiency of conversion of light energy into electrical energy.

Thin films and nanomaterials

International Nuclear Information System (INIS)

Jayakumar, S.; Kannan, M.D.; Prasanna, S.

2012-01-01

The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

Method for nanomodulation of metallic thin films following the replica-antireplica process based on porous alumina membranes

Energy Technology Data Exchange (ETDEWEB)

Palma, J.L. [Departamento de Ciencias Básicas, Facultad de Ingeniería, Universidad Central de Chile, Santa Isabel 1186, 8330601 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago (Chile); Denardin, J.C.; Escrig, J. [Departamento de Física, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 9170124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago (Chile)

2017-03-15

In this paper we have introduced a method for modulation of metallic thin films by sputtering of metals on anodized aluminum templates. Using a high deposition rate during deposition of the non-magnetic metal on the Al pattern, we have separated the two metallic surfaces and, thus, imprinted a pattern of nanohills on a non-magnetic metallic film, such as Au, Ag or Cu. The morphology of the nanostructured metallic films was determined by scanning electron microscopy. Thus, we have confirmed that the ordering degree of the Al template remained after the replication process. Additionally, and as an example of use of these films, we have prepared Supermalloy thin films deposited by sputtering onto these nanostructured non-magnetic metals. The room temperature magnetic behavior of these thin films is also studied. Interestingly, we have found that when the external magnetic field is applied out of plane of the substrate, the coercivity increases linearly as we increase the radius of the nanohills. These soft magnetic films can open new opportunities for magnetic field sensor applications. - Highlights: • A very soft magnetic film is investigated on ordered nanohills. • It is possible to imprint a metallic pattern directly from the etched aluminum foil. • These nanopatterned substrates add an additional degree of freedom. • A method for modulation of metallic thin films.

Electrochemical preparation of photoelectrochemically active CuI thin films from room temperature ionic liquid

International Nuclear Information System (INIS)

Huang, Hsin-Yi; Chien, Da-Jean; Huang, Genin-Gary; Chen, Po-Yu

2012-01-01

Highlights: ► CuI film can be formed by anodization of Cu in ionic liquid containing iodide. ► Coordinating strength of anion in ionic liquid determine the formation of CuI. ► Photocurrent of the CuI film can be observed in aqueous solution and in ionic liquid. ► Cu layer coated on conductive substrates can be converted to CuI. - Abstract: Cuprous iodide (CuI) thin films with photoelectrochemical activity were prepared by anodizing copper wire or copper-electrodeposited tungsten wire in the room temperature ionic liquid 1-butyl-3-methylimidazolium hexafluorophosphate (BMI-PF 6 RTIL) containing N-butyl-N-methylpyrrolidinium iodide (BMP-I). A copper coating was formed on the tungsten wire by potentiostatic electrodeposition in BMP-dicyanamide (BMP-DCA) RTIL containing copper chloride (CuCl). The CuI films formed using this method were compact, fine-grained and exhibited good adhesion. The characteristic diffraction signals of CuI were observed by powder X-ray diffractometry (XRD). X-ray photoelectron spectroscopy (XPS) also confirmed the formation of a CuI compound semiconductor. The CuI films demonstrated an apparent and stable photocurrent under white light illumination in aqueous solutions and in a RTIL. This method has enabled the electrochemical formation of CuI from a RTIL for the first time, and the first observation of a photocurrent produced from CuI in a RTIL. The coordinating strength of the anions of the RTIL is the key to the successful formation of the CuI thin film. If the coordinating strength of the anions of the RTIL is too strong, no CuI formation is observed.

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

Science.gov (United States)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

Process of film formation by anodizing AZ91D magnesium alloy

Energy Technology Data Exchange (ETDEWEB)

Qian Jiangang; Li Di; Zhang Feng [School of Materials Science and Engineering, Beijing Univ. of Aeronautics and Astronautics (China)

2005-07-01

The kinetics of film-forming process by anodizing AZ91D Mg alloy has been studied by ways of voltage-time and thickness-time curve, and the surface morphology, structure, composition and valence of element, phase constituent of anodic films have been analyzed by SEM, EDS, XPS and XRD respectively. The results show that the film-forming course can be divided into four stages. Formation of dense layer before sparking is the first stage. Formation of porous layer accompanied with a bit of small sparking is the second stage. Porous layer fast growth along with middle sparking is the third stage. Porous layer slowly-growth along with bigger sparking is the fourth stage. The anodic films contains approximately Mg,O,Si and B, which is composed mainly of MgO, MgSiO{sub 3} and Mg{sub 3}B{sub 2}O{sub 6}. (orig.)

The electrochemical properties and mechanism of formation of anodic oxide films on Mg-Al alloys

Energy Technology Data Exchange (ETDEWEB)

Kim, Seong Jong; Okido, Masazumi [Nagoya Univ., Nagoya (Japan)

2003-07-01

The electronchemical properties and the mechanism of formation of anodic oxide films on Mg alloys containing 0-15 mass% Al, when anodized in NaOH solution, were investigated by focusing on the effects of anodizing potential, Al content, and anodizing time. The intensity ratio of Mg(OH){sub 2} in the XRD analysis decreased with increasing applied potential, while that of MgO increased. Mg(OH){sub 2} was barely detected at 80 V, while MgO was readily detected. The anti-corrosion properties of anodized specimens at each constant potential were better than those of non-anodized specimens. The specimen anodized at an applied potential of 3 V had the best anti-corrosion property. The intensity ratio of the {beta} phase increased with aluminum content in Mg-Al alloys. During anodizing, the active dissolution reaction occurred preferentially in {beta} phase until about 4 min, and then the current density increased gradually until 7 min. The dissolution reaction progressed in {alpha} phase, which had a lower Al content. In the anodic polarization test in 0.017 mol{center_dot}dm{sup -3} NaCl and 0.1 mol{center_dot}dm{sup -3} Na{sub 2}SO{sub 4} at 298 K, the current density of Mg-15 mass% Al alloy anodized for 10 min increased, since the anodic film that forms on the {alpha} phase is a non-compacted film. The anodic film on the {alpha} phase at 30 min was a compact film as compared with that at 10 min.

Investigation of nanoporous platinum thin films fabricated by reactive sputtering: Application as micro-SOFC electrode

Science.gov (United States)

Jung, WooChul; Kim, Jae Jin; Tuller, Harry L.

2015-02-01

Highly porous Pt thin films, with nano-scale porosity, were fabricated by reactive sputtering. The strategy involved deposition of thin film PtOx at room temperature, followed by the subsequent decomposition of the oxide by rapid heat treatment. The resulting films exhibited percolating Pt networks infiltrated with interconnected nanosized pores, critical for superior solid oxide fuel cell cathode performance. This approach is particularly attractive for micro-fabricated solid oxide fuel cells, since it enables fabrication of the entire cell stack (anode/electrolyte/cathode) within the sputtering chamber, without breaking vacuum. In this work, the morphological, crystallographic and chemical properties of the porous electrode were systematically varied by control of deposition conditions. Oxygen reduction reaction kinetics were investigated by means of electrochemical impedance spectroscopy, demonstrating the critical role of nano-pores in achieving satisfactory micro-SOFC cathode performance.

Visible photoenhanced current-voltage characteristics of Au : TiO2 nanocomposite thin films as photoanodes

International Nuclear Information System (INIS)

Naseri, N; Amiri, M; Moshfegh, A Z

2010-01-01

In this investigation, the effect of annealing temperature and concentration of gold nanoparticles on the photoelectrochemical properties of sol-gel deposited Au : TiO 2 nanocomposite thin films is studied. Various gold concentrations have been added to the TiO 2 thin films and their properties are compared. All the deposited samples are annealed at different temperatures. The optical density spectra of the films show the formation of gold nanoparticles in the films. The optical bandgap energy of the Au : TiO 2 films decreases with increasing Au concentration. The crystalline structure of the nanocomposite films is studied by x-ray diffractometry indicating the formation of gold nanocrystals in the anatase TiO 2 nanocrystalline thin films. X-ray photoelectron spectroscopy reveals that the presence of gold in the metallic state and the formation of TiO 2 are stoichiometric. The photoelectrochemical properties of the Au : TiO 2 samples are characterized using a compartment cell containing H 2 SO 4 and KOH as cathodic and anodic electrolytes, respectively. It is found that the addition of Au nanoparticles in TiO 2 films enhances the photoresponse of the layer and the addition of gold nanocrystals with an optimum value of 5 mol% resulted in the highest photoelectrochemical activity. Moreover, the photoresponse of the samples is also enhanced with an increase in the annealing temperature.

Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

Photoluminescence emission of nanoporous anodic aluminum oxide films prepared in phosphoric acid

Science.gov (United States)

2012-01-01

The photoluminescence emission of nanoporous anodic aluminum oxide films formed in phosphoric acid is studied in order to explore their defect-based subband electronic structure. Different excitation wavelengths are used to identify most of the details of the subband states. The films are produced under different anodizing conditions to optimize their emission in the visible range. Scanning electron microscopy investigations confirm pore formation in the produced layers. Gaussian analysis of the emission data indicates that subband states change with anodizing parameters, and various point defects can be formed both in the bulk and on the surface of these nanoporous layers during anodizing. PMID:23272786

Biomimetic thin film synthesis

Energy Technology Data Exchange (ETDEWEB)

Graff, G.L.; Campbell, A.A.; Gordon, N.R.

1995-05-01

The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

MoOx thin films deposited by magnetron sputtering as an anode for aqueous micro-supercapacitors

Science.gov (United States)

Liu, Can; Li, Zhengcao; Zhang, Zhengjun

2013-12-01

In order to examine the potential application of non-stoichiometric molybdenum oxide as anode materials for aqueous micro-supercapacitors, conductive MoOx films (2 ⩽ x ⩽ 2.3) deposited via RF magnetron sputtering at different temperatures were systematically studied for composition, structure and electrochemical properties in an aqueous solution of Li2SO4. The MoOx (x ≈ 2.3) film deposited at 150 °C exhibited a higher areal capacitance (31 mF cm-2 measured at 5 mV s-1), best rate capability and excellent stability at potentials below -0.1 V versus saturated calomel electrode, compared to the films deposited at room temperature and at higher temperatures. These superior properties were attributed to the multi-valence composition and mixed-phase microstructure, i.e., the coexistence of MoO2 nanocrystals and amorphous MoOx (2.3 < x ⩽ 3). A mechanism combining Mo(IV) oxidation/reduction on the hydrated MoO2 grain surfaces and cation intercalation/extrusion is proposed to illustrate the pseudo-capacitive process.

MoOx thin films deposited by magnetron sputtering as an anode for aqueous micro-supercapacitors

Directory of Open Access Journals (Sweden)

Can Liu

2013-11-01

Full Text Available In order to examine the potential application of non-stoichiometric molybdenum oxide as anode materials for aqueous micro-supercapacitors, conductive MoOx films (2 ≤ x ≤ 2.3 deposited via RF magnetron sputtering at different temperatures were systematically studied for composition, structure and electrochemical properties in an aqueous solution of Li2SO4. The MoOx (x ≈ 2.3 film deposited at 150 °C exhibited a higher areal capacitance (31 mF cm−2 measured at 5 mV s−1, best rate capability and excellent stability at potentials below −0.1 V versus saturated calomel electrode, compared to the films deposited at room temperature and at higher temperatures. These superior properties were attributed to the multi-valence composition and mixed-phase microstructure, i.e., the coexistence of MoO2 nanocrystals and amorphous MoOx (2.3 < x ≤ 3. A mechanism combining Mo(IV oxidation/reduction on the hydrated MoO2 grain surfaces and cation intercalation/extrusion is proposed to illustrate the pseudo-capacitive process.

Structural features of anodic oxide films formed on aluminum substrate coated with self-assembled microspheres

International Nuclear Information System (INIS)

Asoh, Hidetaka; Uchibori, Kota; Ono, Sachiko

2009-01-01

The structural features of anodic oxide films formed on an aluminum substrate coated with self-assembled microspheres were investigated by scanning electron microscopy and atomic force microscopy. In the first anodization in neutral solution, the growth of a barrier-type film was partially suppressed in the contact area between the spheres and the underlying aluminum substrate, resulting in the formation of ordered dimple arrays in an anodic oxide film. After the subsequent second anodization in acid solution at a voltage lower than that of the first anodization, nanopores were generated only within each dimple. The nanoporous region could be removed selectively by post-chemical etching using the difference in structural dimensions between the porous region and the surrounding barrier region. The mechanism of anodic oxide growth on the aluminum substrate coated with microspheres through multistep anodization is discussed.

Structural features of anodic oxide films formed on aluminum substrate coated with self-assembled microspheres

Energy Technology Data Exchange (ETDEWEB)

Asoh, Hidetaka [Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)], E-mail: asoh@cc.kogakuin.ac.jp; Uchibori, Kota; Ono, Sachiko [Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)

2009-07-15

The structural features of anodic oxide films formed on an aluminum substrate coated with self-assembled microspheres were investigated by scanning electron microscopy and atomic force microscopy. In the first anodization in neutral solution, the growth of a barrier-type film was partially suppressed in the contact area between the spheres and the underlying aluminum substrate, resulting in the formation of ordered dimple arrays in an anodic oxide film. After the subsequent second anodization in acid solution at a voltage lower than that of the first anodization, nanopores were generated only within each dimple. The nanoporous region could be removed selectively by post-chemical etching using the difference in structural dimensions between the porous region and the surrounding barrier region. The mechanism of anodic oxide growth on the aluminum substrate coated with microspheres through multistep anodization is discussed.

Designing self-standing silicon-copper composite helices as anodes for lithium ion batteries

International Nuclear Information System (INIS)

Polat, B.D.; Keles, O.

2016-01-01

In this study, we have fabricated helical thin films to be used as an anode material in lithium ion batteries (LIB). The thin films having various Cu−Si atomic ratios (30–70%, 20–80%, and 10–90%) are prepared by using ion-assisted glancing angle co-deposition. Cu plays a crucial role in holding the electrode together, minimizing overall capacity loss and enabling faster electron transfer thus, improving the electrochemical performances of the electrodes. Increasing the Cu/Si atomic ratio affects the structure of the helices and their alignment. Implementing ion assisted deposition at the beginning of the film deposition helps to improve film adhesion. The Si-20 at.% Cu anode delivers 1885 mAh g"−"1 initially with 98% coulombic efficiency and retains 77% of the capacity after 100 cycles at 100 mA g"−"1. - Highlights: • Highly adherent SiCu helices are deposited by ion assisted glancing angle deposition. • Cu content in the SiCu helices affects the helice' morphology and structure. • SiCu helices with different Cu contents have been used as anodes for LIB. • Helices being like microsprings, improve the mechanical resistance of the anode.

Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov (United States)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

Thin Film & Deposition Systems (Windows)

Data.gov (United States)

Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

Comparative evaluation of corrosion behaviour of type K thin film thermocouple and its bulk counterpart

International Nuclear Information System (INIS)

Mukherjee, S.K.; Barhai, P.K.; Srikanth, S.

2011-01-01

Highlights: → Anodic vacuum arc deposited chromel and alumel films are more 'noble' in 5% NaCl solution than their respective wires. → Chromel undergoes localised corrosion while alumel shows uniform corrosion. → Virgin samples of chromel-alumel TFTCs exhibit good thermoelectric response. → Their thermoelectric outputs remain largely unaffected when shelved under normal atmospheric conditions. → After 288 h of exposure in salt spray environment, their thermoelectric outputs show noticeable change due to size effects. - Abstract: This paper investigates the corrosion behaviour of type K thermoelements and their thin films, and compares the performance of chromel-alumel thin film thermocouple with its wire counterpart before and after exposure to 5% NaCl medium. Potentiodynamic polarisation tests reveal that chromel and alumel films are more 'noble' than their respective wires. Alumel corrodes faster when coupled with chromel in films than as wires. Secondary electron micrographs and electrochemical impedance spectroscopy measurements suggest that chromel shows localised corrosion while alumel undergoes uniform corrosion. Corrosion adversely affects the thermocouple output and introduces an uncertainty in the measurement.

Characterization of organic thin films

CERN Document Server

Ulman, Abraham; Evans, Charles A

2009-01-01

Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

Li+-Permeable Film on Lithium Anode for Lithium Sulfur Battery.

Science.gov (United States)

Yang, Yan-Bo; Liu, Yun-Xia; Song, Zhiping; Zhou, Yun-Hong; Zhan, Hui

2017-11-08

Lithium-sulfur (Li-S) battery is an important candidate for next-generation energy storage. However, the reaction between polysulfide and lithium (Li) anode brings poor cycling stability, low Coulombic efficiency, and Li corrosion. Herein, we report a Li protection technology. Li metal was treated in crown ether containing electrolyte, and thus, treated Li was further used as the anode in Li-S cell. Due to the coordination between Li + and crown ether, a Li + -permeable film can be formed on Li, and the film is proved to be able to block the detrimental reaction between Li anode and polysulfide. By using the Li anode pretreated in 2 wt % B15C5-containing electrolyte, Li-S cell exhibits significantly improved cycling stability, such as∼900 mAh g -1 after 100 cycles, and high Coulombic efficiency of>93%. In addition, such effect is also notable when high S loading condition is applied.

Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

International Nuclear Information System (INIS)

Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

2006-01-01

Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

Anodization of aluminium thin films on p{sup ++}Si and annihilation of strong luminescence from Al{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Efeoglu, Hasan, E-mail: hefeoglu@atauni.edu.t [Atatuerk University, Faculty of Engineering, Department of Electrical and Electronics Engineering, 25240 Erzurum (Turkey); Karacali, Tevhit [Atatuerk University, Faculty of Engineering, Department of Electrical and Electronics Engineering, 25240 Erzurum (Turkey); Meral, Kadem; Erdogan, Ibrahim Y.; Onganer, Yavuz [Atatuerk University, Faculty of Sciences, Department of Chemistry, 25240 Erzurum (Turkey)

2010-01-15

Photoluminescence (PL) of Al{sub 2}O{sub 3} films obtained by anodization of thermally evaporated and annealed thin Al films on p{sup ++}Si in 0.3 M oxalic acid has been investigated. Thermal annealing at 200-950 deg. C under the dry nitrogen atmosphere was used for deactivation of luminescence centres. Luminescence from as grown films was broad and located at 425 nm. This luminescence reached to highest level after annealing at 600 deg. C. Maximum 10 min was required for full optical activation and prolonged annealing up to 4 h did not change the luminescence intensity. Because of deep levels, absorption band edge of as grown films was shifted to the lower energy which is 3.25 eV. Annealing above 800 deg. C reduced the PL intensity and this observation was correlated with the blue shift of band edge as the defects annealed out. Disappearing PL intensity and blue shift of band edge absorption after annealing at 950 deg. C was mainly attributed to the oxygen-related defects and partly to impurities that may be originated from oxalic acid. AFM results did not show any hexagonally ordered holes but uniformly distributed nanosized Al{sub 2}O{sub 3} clusters that were clearly seen. XRD measurements on as grown Al{sub 2}O{sub 3} showed only [1 1 0] direction of alpha phase. Debye-Scherer calculation for this line indicates that cluster size is 35.7 nm. XRD and AFM pictures suggest that nanocrystalline Al{sub 2}O{sub 3} are embedded in amorphous Al{sub 2}O{sub 3}.

Optical constants of anodic aluminum oxide films formed in oxalic acid solution

Energy Technology Data Exchange (ETDEWEB)

Wang Jian [College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070 (China); Wang Chengwei [College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)], E-mail: cwwang@nwnu.edu.cn; Li Yan [College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070 (China); Liu Weimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2008-09-01

The anodic aluminum oxide (AAO) films with highly ordered nanopore arrays were prepared in oxalic acid solution under different anodizing voltage and time, its surface and cross section appearances were characterized by using field emission scanning electron microscopy, the transmission spectra with the interference fringes were measured at normal incidence over the wavelength range 200 to 2500 nm. Then the modified Swanepoel method was used for the determination of the optical constants and thickness of the free standing AAO films. The results indicate that the refractive index increases with the increase of anodizing voltage and the decrease of anodizing time, which is mainly due to the content of Al{sub 2}O{sub 3} with octahedron increases in the AAO films. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model, and the energy dependence of the absorption coefficient can be described using the direct transition model proposed by Tauc. Likewise, the optical energy gap E{sub g} is derived from Tauc's extrapolation, and E{sub g} increases from 4.178 to 4.256 eV with the anodizing voltage, but is weakly dependent on anodizing time. All the results are self-consistent in the paper.

Self-Limited Growth in Pentacene Thin Films.

Science.gov (United States)

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

Science.gov (United States)

Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

2014-09-01

The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

Structural-morphological variations in pseudo-barrier films of anode aluminium oxide under irradiation with high-energy particles

International Nuclear Information System (INIS)

Chernykh, M.A.; Belov, V.T.

1988-01-01

Comparative study of structural-morphological variations under electron beam effect in pseudo-barrier films of anode aluminium oxide, obtained in seven different solutions and proton or X-rays pre-irradiated to determine structure peculiarities of anode aluminium oxides, is presented. Such study is a matter of interest from the solid-phase transformation theory point of view and for anode aluminium films application under radiation. Stability increase of pseudo-barrier films of anode aluminium oxide to the effect of UEhMV-100 K microscope electron beam at standard modes of operation (75 kV) due to proton or X-rays irradiation is found. Difference in structural-monorphological variations obtained in different solutions of anode aluminium films under high-energy particles irradiation is determined. Strucural-phase microinhomogeneity of amorphous pseudo-barrier films of anode aluminium oxide and its influence on solid-phase transformations character under electron bean of maximal intensity are detected

Photoelectrochemical processes in organic semiconductor: Ambipolar perylene diimide thin film

Science.gov (United States)

Kim, Jung Yong; Chung, In Jae

2018-03-01

A thin film of N,N‧-dioctadecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C18) is spin-coated on indium tin oxide (ITO) glass. Using the PTCDI-C18/ITO electrode, we fabricate a photoelectrochemical cell with the ITO/PTCDI-C18/Redox Electrolyte/Pt configuration. The electrochemical properties of this device are investigated as a function of hydroquinone (HQ) concentration, bias voltage, and wavelength of light. Anodic photocurrent is observed at V ≥ -0.2 V vs. Ag/AgCl, indicating that the PTCDI-C18 film acts as an n-type semiconductor as usual. However, when benzoquinone (BQ) is inserted into the electrolyte system instead of HQ, cathodic photocurrent is observed at V ≤ 0.0 V, displaying that PTCDI-C18 abnormally serves as a p-type semiconductor. Hence the overall results reveal that the PTCDI-C18 film can be an ambipolar functional semiconductor depending on the redox couple in the appropriate voltage.

Thin films for precision optics

International Nuclear Information System (INIS)

Araujo, J.F.; Maurici, N.; Castro, J.C. de

1983-01-01

The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

Analysis of Hard Thin Film Coating

Science.gov (United States)

Shen, Dashen

1998-01-01

MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Thin-film solar cell

NARCIS (Netherlands)

Metselaar, J.W.; Kuznetsov, V.I.

1998-01-01

The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

Thin-Film Material Science and Processing | Materials Science | NREL

Science.gov (United States)

Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

Towards anode with low indium content as effective anode in organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Touihri, S. [Unite de Physique des Dispositifs a Semi-conducteurs, Universite El Manar Faculte des Sciences de Tunis, Campus Universitaire 2092 (Tunisia); Cattin, L.; Nguyen, D-T. [LUNAM, Universite de Nantes, Institut Jean Rouxel (IMN), UMR 6502, 2 rue de la Houssiniere, BP 92208, Nantes F-44322 (France); Morsli, M. [LUNAM, Universite de Nantes, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44322 (France); Louarn, G. [LUNAM, Universite de Nantes, Institut Jean Rouxel (IMN), UMR 6502, 2 rue de la Houssiniere, BP 92208, Nantes F-44322 (France); Bouteville, A.; Froger, V. [Arts et Metiers Paris Tech Angers, Laboratoire Procedes-Materiaux-Instrumentation, 2, bd du Ronceray, BP 3525, 49035 Angers Cedex (France); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [LUNAM, Universite de Nantes, Moltech Anjou, CNRS, UMR 6200, FSTN, 2 Rue de la Houssiniere, BP 92208, Nantes F-44322 (France)

2012-01-15

In{sub 2}O{sub 3} thin films (100 nm thick) have been deposited by reactive evaporation of indium, in an oxygen partial atmosphere. Conductive ({sigma} = 3.5 Multiplication-Sign 10{sup 3} S/cm) and transparent films are obtained using the following experimental conditions: oxygen partial pressure = 1 Multiplication-Sign 10{sup -1} Pa, substrate temperature = 300 Degree-Sign C and deposition rate = 0.02 nm/s. Layers of this In{sub 2}O{sub 3} thick of 5 nm have been introduced in AZO/In{sub 2}O{sub 3} and FTO/In{sub 2}O{sub 3} multilayer anode structures. The performances of organic photovoltaic cells, based on the couple CuPc/C{sub 60}, are studied using the anode as parameter. In addition to these bilayers, other structures have been used as anode: AZO, FTO, AZO/In{sub 2}O{sub 3}/MoO{sub 3}, FTO/In{sub 2}O{sub 3}/MoO{sub 3} and FTO/MoO{sub 3}. It is shown that the use of the In{sub 2}O{sub 3} film in the bilayer structures improves significantly the cell performances. However the open circuit voltage is quite small while better efficiencies are achieved when MoO{sub 3} is present. These results are discussed in the light of surface roughness and surface work function of the different anodes.

Nanocrystal thin film fabrication methods and apparatus

Science.gov (United States)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

2018-01-09

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Electrical transport through single-wall carbon nanotube-anodic aluminum oxide-aluminum heterostructures

International Nuclear Information System (INIS)

Kukkola, Jarmo; Rautio, Aatto; Sala, Giovanni; Pino, Flavio; Toth, Geza; Leino, Anne-Riikka; Maeklin, Jani; Jantunen, Heli; Uusimaeki, Antti; Kordas, Krisztian; Gracia, Eduardo; Terrones, Mauricio; Shchukarev, Andrey; Mikkola, Jyri-Pekka

2010-01-01

Aluminum foils were anodized in sulfuric acid solution to form thick porous anodic aluminum oxide (AAO) films of thickness ∼6 μm. Electrodes of carboxyl-functionalized single-wall carbon nanotube (SWCNT) thin films were inkjet printed on the anodic oxide layer and the electrical characteristics of the as-obtained SWCNT-AAO-Al structures were studied. Nonlinear current-voltage transport and strong temperature dependence of conduction through the structure was measured. The microstructure and chemical composition of the anodic oxide layer was analyzed using transmission and scanning electron microscopy as well as x-ray photoelectron spectroscopy. Schottky emission at the SWCNT-AAO and AAO-Al interfaces allowed by impurity states in the anodic aluminum oxide film together with ionic surface conduction on the pore walls of AAO gives a reasonable explanation for the measured electrical conduction. Calcined AAO is proposed as a dielectric material for SWCNT-field effect transistors.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Science.gov (United States)

Xiao, Xiang; Zhang, Letao; Shao, Yang; Zhou, Xiaoliang; He, Hongyu; Zhang, Shengdong

2017-12-13

A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric Al 2 O 3 is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer Al 2 O 3 is formed using a localized anodization technique. The anodized Al 2 O 3 passivation layer shows a superior passivation effect to that of PECVD SiO 2 . The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm 2 /V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 10 8 , and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.

Effect of ageing in the electrolyte and water on porous anodic films on zirconium

Energy Technology Data Exchange (ETDEWEB)

Muratore, F.; Hashimoto, T.; Skeldon, P., E-mail: peter.skeldon@manchester.ac.uk; Thompson, G.E.

2011-06-15

Highlights: Porous anodic films are formed on zirconium consisting of nanotubes embedded in a fluoride-rich matrix. {yields}Ageing in the formation electrolyte transforms the films from porous to nanotubular. Ageing causes losses of zirconium and fluorine, due to dissolution of the matrix. Ageing in water has negligible influence on the film composition and the film morphology. - Abstract: The present study demonstrates the significant influence of ageing in the formation electrolyte on the morphology and composition of anodic films grown on zirconium in 0.35 M ammonium fluoride in glycerol. Ageing after anodizing, by immersion in the electrolyte for 1 h, is shown to promote a transition from a porous to a nanotubular morphology, due to the dissolution of the fluoride-rich intratubular material in which the nanotubes are embedded. The morphological change is accompanied by a significant loss of zirconium and fluorine from the film. In contrast, ageing in deionized water has little influence on the films.

Characterization of anodic barrier films on tantalum and 1100 aluminum by ISS/SIMS

International Nuclear Information System (INIS)

McCune, R.C.

1978-01-01

Ion scattering spectrometry (ISS) and concurrent secondary ion mass spectrometry (SIMS) were used to determine the depth profiles of anodic barrier oxide films grown on tantalum and type 1100 aluminum. The sputter rate in each case was determined from the film thickness measured by the anodic overvoltage, and the penetration time determined by the decrease in intensity of the metal oxide fragment observed using SIMS. A mixture of helium and neon ions was used to sputter aluminum oxide films in order to observe ion scattering of helium by oxygen, while taking advantage of the higher sputtering rate available with neon. A comparison of sputter rates for helium and neon on tantalum oxide indicated that neon sputtered the film at a rate eight times that of helium. SIMS depth profiling of the residual boron in the anodic aluminum oxide indicated a mixing effect which did not permit adequate resolution of the interface between the oxide film and the underlying metal

Study of passive films formed on mild steel in alkaline media by the application of anodic potentials

Energy Technology Data Exchange (ETDEWEB)

Freire, L. [Universidade de Vigo, E.T.S.E.I., Campus Universitario, 36310 Vigo (Spain)], E-mail: lorenafp@uvigo.es; Novoa, X.R. [Universidade de Vigo, E.T.S.E.I., Campus Universitario, 36310 Vigo (Spain); Montemor, M.F. [ICEMS - Instituto Superior Tecnico, Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049 - 001 Lisboa (Portugal); Carmezim, M.J. [ICEMS - Instituto Superior Tecnico, Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049 - 001 Lisboa (Portugal); EST Setubal, DEM, Instituto Politecnico de Setubal, Campus IPS, 2910 Setubal (Portugal)

2009-04-15

In this paper, iron oxide thin layers formed on mild steel substrates in alkaline media by the application of different anodic potentials were studied in order to characterize their morphology, composition and electrochemical behaviour, in particular under conditions of cathodic protection. The surface composition was evaluated by X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The morphology of the surface oxides was studied via Atomic Force Microscopy (AFM). The electrochemical behaviour of the surface oxides was studied using Electrochemical Impedance Spectroscopy (EIS). The results showed that the surface film is composed by Fe{sup 2+}oxides and Fe{sup 3+} oxides and/or hydroxides. The contribution of Fe{sup 2+} species vanishes when the potential of film formation increases in the passive domain. Two distinct phases were differentiated in the outer layers of the surface film, which proves that film growing is topotactic in nature.

Study of passive films formed on mild steel in alkaline media by the application of anodic potentials

International Nuclear Information System (INIS)

Freire, L.; Novoa, X.R.; Montemor, M.F.; Carmezim, M.J.

2009-01-01

In this paper, iron oxide thin layers formed on mild steel substrates in alkaline media by the application of different anodic potentials were studied in order to characterize their morphology, composition and electrochemical behaviour, in particular under conditions of cathodic protection. The surface composition was evaluated by X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The morphology of the surface oxides was studied via Atomic Force Microscopy (AFM). The electrochemical behaviour of the surface oxides was studied using Electrochemical Impedance Spectroscopy (EIS). The results showed that the surface film is composed by Fe 2+ oxides and Fe 3+ oxides and/or hydroxides. The contribution of Fe 2+ species vanishes when the potential of film formation increases in the passive domain. Two distinct phases were differentiated in the outer layers of the surface film, which proves that film growing is topotactic in nature

Fast anodization fabrication of AAO and barrier perforation process on ITO glass

Science.gov (United States)

Liu, Sida; Xiong, Zuzhou; Zhu, Changqing; Li, Ma; Zheng, Maojun; Shen, Wenzhong

2014-04-01

Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. A faster method to obtain AAO on ITO substrates has been developed, which with 2.5 vol.% phosphoric acid at a voltage of 195 V at 269 K. It was found that the height of AAO films increased initially and then decreased with the increase of the anodizing time. Especially, the barrier layers can be removed by extending the anodizing duration, which is very useful for obtaining perforation AAO and will broaden the application of AAO on ITO substrates.

Structural transformation of nickel hydroxide films during anodic oxidation

Energy Technology Data Exchange (ETDEWEB)

Crocker, Robert W. [Univ. of California, Berkeley, CA (United States); Muller, Rolf H. [Univ. of California, Berkeley, CA (United States)

1992-05-01

The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 - 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

Structural transformation of nickel hydroxide films during anodic oxidation

Energy Technology Data Exchange (ETDEWEB)

Crocker, R.W.; Muller, R.H.

1992-05-01

The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 {endash} 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

Development of neutron diffuse scattering analysis code by thin film and multilayer film

International Nuclear Information System (INIS)

Soyama, Kazuhiko

2004-01-01

To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

Thin film tritium dosimetry

Science.gov (United States)

Moran, Paul R.

1976-01-01

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Thin films for emerging applications v.16

CERN Document Server

Francombe, Maurice H

1992-01-01

Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

Structural and optical characterization of porous anodic aluminum oxide

International Nuclear Information System (INIS)

Galca, Aurelian C.; Kooij, E. Stefan; Wormeester, Herbert; Salm, Cora; Leca, Victor; Rector, Jan H.; Poelsema, Bene

2003-01-01

Spectroscopic ellipsometry and scanning electron microscopy (SEM) experiments are employed to characterize porous aluminum oxide obtained by anodization of thin aluminum films. Rutherford backscattering spectra and x-ray diffraction experiments provide information on the composition and the structure of the samples. Results on our thin film samples with a well-defined geometry show that anodization of aluminum is reproducible and results in a porous aluminum oxide network with randomly distributed, but perfectly aligned cylindrical pores perpendicular to the substrate. The ellipsometry spectra are analyzed using an anisotropic optical model, partly based on the original work by Bruggeman. The model adequately describes the optical response of the anodized film in terms of three physically relevant parameters: the film thickness, the cylinder fraction, and the nanoporosity of the aluminum oxide matrix. Values of the first two quantities, obtained from fitting the spectra, are in perfect agreement with SEM results, when the nanoporosity of the aluminum oxide matrix is taken into account. The validity of our optical model was verified over a large range of cylinder fractions, by widening of the pores through chemical etching in phosphoric acid. While the cylinder fraction increases significantly with etch time and etchant concentration, the nanoporosity remains almost unchanged. Additionally, based on a simple model considering a linear etch rate, the concentration dependence of the etch rate was determined

Interfaces and thin films physics

International Nuclear Information System (INIS)

Equer, B.

1988-01-01

The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

Luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid

International Nuclear Information System (INIS)

Stojadinovic, S.; Vasilic, R.; Petkovic, M.; Nedic, Z.; Kasalica, B.; Belca, I.; Zekovic, Lj.

2010-01-01

In this paper, we have investigated luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid. For the first time we have measured weak luminescence during anodization of aluminum in this electrolyte (so-called galvanoluminescence GL) and showed that there are wide GL bands in the visible region of the spectrum and observed two dominant spectral peaks. The first one is at about 425 nm, and the second one shifts with anodization voltage. As the anodization voltage approaches the breakdown voltage, a large number of sparks appear superimposed on the anodic GL. Several intensive band peaks were observed under breakdown caused by electron transitions in W, P, Al, O, H atoms. Furthermore, photoluminescence (PL) of anodic oxide films and anodic-spark formed oxide coatings were performed. In both cases wide PL bands in the range from 320 nm to 600 nm were observed.

Buckling of Thin Films in Nano-Scale

Directory of Open Access Journals (Sweden)

Li L.A.

2010-06-01

Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

Photoelectrochemical study of nanostructured ZnO thin films for hydrogen generation from water splitting

Energy Technology Data Exchange (ETDEWEB)

Wolcott, Abraham; Zhang, Jin Z. [Department of Chemistry and Biochemistry, University of California, Santa Cruz 1156 High St. Santa Cruz, CA 95064 (United States); Smith, Wilson A.; Zhao, Yiping [Department of Physics and Astronomy, University of Georgia, Athens, GA 30602 (United States); Kuykendall, Tevye R. [Department of Chemistry, University of California, Berkeley Berkeley, CA 94720 (United States)

2009-06-23

Photoelectrochemical cells based on traditional and nanostructured ZnO thin films are investigated for hydrogen generation from water splitting. The ZnO thin films are fabricated using three different deposition geometries: normal pulsed laser deposition, pulsed laser oblique-angle deposition, and electron-beam glancing-angle deposition. The nanostructured films are characterized by scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and photoelectrochemical techniques. Normal pulsed laser deposition produces dense thin films with ca. 200 nm grain sizes, while oblique-angle deposition produces nanoplatelets with a fishscale morphology and individual features measuring ca. 900 by 450 nm on average. In contrast, glancing-angle deposition generates a highly porous, interconnected network of spherical nanoparticles of 15-40 nm diameter. Mott-Schottky plots show the flat band potential of pulsed laser deposition, oblique-angle deposition, and glancing-angle deposition samples to be -0.29, -0.28 and +0.20 V, respectively. Generation of photocurrent is observed at anodic potentials and no limiting photocurrents were observed with applied potentials up to 1.3 V for all photoelectrochemical cells. The effective photon-to-hydrogen efficiency is found to be 0.1%, 0.2% and 0.6% for pulsed laser deposition, oblique-angle deposition and glancing-angle deposition samples, respectively. The photoelectrochemical properties of the three types of films are understood to be a function of porosity, crystal defect concentration, charge transport properties and space charge layer characteristics. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

Temperature dependence of LRE-HRE-TM thin films

Science.gov (United States)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Synthesis and characterization of 10%Gd doped ceria (GDC) deposited on NiO-GDC anode-grade-ceramic substrate as half cell for IT-SOFC

DEFF Research Database (Denmark)

Chourashiya, M. G.; Jadhav, L. D.

2011-01-01

In the present research work spray pyrolysis technique (SPT) is employed to synthesize GDC (10%Gd doped ceria) thin films on anode-grade-ceramic substrate (porous NiO-GDC). The film/substrate structure was characterized for their micro-structural and electrical properties along with their interfa......In the present research work spray pyrolysis technique (SPT) is employed to synthesize GDC (10%Gd doped ceria) thin films on anode-grade-ceramic substrate (porous NiO-GDC). The film/substrate structure was characterized for their micro-structural and electrical properties along...... with their interfacial-quality. By optimization of preparative parameters of SPT and modification of surface of anode-grade ceramic substrate, we were able to prepare the GDC films having thickness of the order of 13 μm on NiO-GDC substrate. Further to improve the interfacial quality and densification of film, annealing...

Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng

2010-07-27

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced concrete, where the infiltrated CNT network functions as both mechanical support and electrical conductor and Si as a high capacity anode material for Li-ion battery. Such free-standing film has a low sheet resistance of ∼30 Ohm/sq. It shows a high specific charge storage capacity (∼2000 mAh/g) and a good cycling life, superior to pure sputtered-on silicon films with similar thicknesses. Scanning electron micrographs show that Si is still connected by the CNT network even when small breaking or cracks appear in the film after cycling. The film can also "ripple up" to release the strain of a large volume change during lithium intercalation. The conductive composite film can function as both anode active material and current collector. It offers ∼10 times improvement in specific capacity compared with widely used graphite/copper anode sheets. © 2010 American Chemical Society.

Application-related properties of giant magnetostrictive thin films

International Nuclear Information System (INIS)

Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

2002-01-01

In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

Anodic films grown on magnesium and magnesium alloys in fluoride solutions

Energy Technology Data Exchange (ETDEWEB)

Ono, S. [Dept. of Applied Chemistry, Kogakuin Univ., Tokyo (Japan); Masuko, N. [Dept. of Metallurgical Engineering, Chiba Inst. of Tech., Narashino, Chiba (Japan)

2003-07-01

Formation behavior of anodic oxide films on magnesium in fluoride electrolytes was investigated with attention to the effects of anodizing voltage and aluminum content. In the range of voltage between 2 V and 100 V, porous film was formed in alkaline fluoride solution associated with high current density at around 5 V and at breakdown voltage. The critical voltage of breakdown to allow maximum current flow was approximately 60 V and relatively independent on substrate purity. The films formed at breakdown voltage showed a lava-like porous structure similar to those obtained on aluminum and other valve metals. Barrier films or semi-barrier films, which were composed of hydrated outer layer and relatively dense inner layer, were formed at the other voltages. In the case of AZ91D, the critical voltage increased to 70 V and peculiar phenomenon at 5 V was not observed, so that only barrier films were formed at less than the breakdown voltage. These phenomena can be explained by the effects of aluminum incorporation into the film to prevent dissolution and to promote passivation of magnesium. The depth profiles of constituent elements showed that aluminum distributed in whole depth of the film. (orig.)

Surface of Alumina Films after Prolonged Breakdowns in Galvanostatic Anodization

Directory of Open Access Journals (Sweden)

Christian Girginov

2011-01-01

Full Text Available Breakdown phenomena are investigated at continuous isothermal (20∘C and galvanostatic (0.2–5 mA cm−2 anodizing of aluminum in ammonium salicylate in dimethylformamide (1 M AS/DMF electrolyte. From the kinetic (-curves, the breakdown voltage ( values are estimated, as well as the frequency and amplitude of oscillations of formation voltage ( at different current densities. The surface of the aluminum specimens was studied using atomic force microscopy (AFM. Data on topography and surface roughness parameters of the electrode after electric breakdowns are obtained as a function of anodization time. The electrode surface of anodic films, formed with different current densities until the same charge density has passed (2.5 C cm−2, was assessed. Results are discussed on the basis of perceptions of avalanche mechanism of the breakdown phenomena, due to the injection of electrons and their multiplication in the volume of the film.

Mechanism of formation and growth of sunflower-shaped imperfections in anodic oxide films on niobium

Energy Technology Data Exchange (ETDEWEB)

Nagahara, K. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-ku, Sapporo 060-8628 (Japan); Sakairi, M. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-ku, Sapporo 060-8628 (Japan); Takahashi, H. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-ku, Sapporo 060-8628 (Japan)]. E-mail: Takahasi@elechem1-mc.eng.hokudai.ac.jp; Matsumoto, K. [Cabot Supermetals K.K., Higashinagahara Works, 111 Nagayachi, Kawahigashi-machi, Kawanuma-gun, Fukushima-ken 969-3431 (Japan); Takayama, K. [Cabot Supermetals K.K., Higashinagahara Works, 111 Nagayachi, Kawahigashi-machi, Kawanuma-gun, Fukushima-ken 969-3431 (Japan); Oda, Y. [Cabot Supermetals K.K., Higashinagahara Works, 111 Nagayachi, Kawahigashi-machi, Kawanuma-gun, Fukushima-ken 969-3431 (Japan)

2007-01-01

Anodizing of niobium has been investigated to develop niobium solid electrolytic capacitors. Chemically polished niobium specimens were anodized in a diluted phosphoric acid solution, initially galvanostatically at i {sub a} = 4 A m{sup -2} up to E {sub a} = 100 V, and then potentiostatically at E {sub a} = 100 V for t {sub pa} = 43.2 ks. During the galvanostatic anodizing, the anode potential increased almost linearly with time, while, during potentiostatic anodizing, the anodic current decreased up to t {sub pa} = 3.6 ks, and then increased slowly before decreasing again after t {sub pa} = 30.0 ks. Images of FE-SEM and in situ AFM showed that nuclei of imperfections were formed at the ridge of cell structures before t {sub pa} = 3.6 ks. After formation, the imperfection nuclei grew, showing cracking and rolling-up of the anodic oxide film, and crystalline oxide was formed at the center of imperfections after t {sub pa} = 3.6 ks. The growth of imperfections caused increases in the anodic current between t {sub pa} = 3.6 and 30.0 ks. Long-term anodizing caused a coalescence of the imperfections, leading to decreases in the anodic current after t {sub pa} = 30.0 ks. As the imperfections grew, the dielectric dispersion of the anodic oxide films became serious, showing a bias voltage dependence of the parallel equivalent capacitance, C {sub p}, and a dielectric dissipation factor, tan {delta}. The mechanism of formation and growth of the imperfections, and the correlation between the structure and dielectric properties of anodic oxide films is discussed.

Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

P-type CuxS thin films: Integration in a thin film transistor structure

International Nuclear Information System (INIS)

Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

2013-01-01

Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

Semiconductor-nanocrystal/conjugated polymer thin films

Science.gov (United States)

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2014-06-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Thin liquid films dewetting and polymer flow

CERN Document Server

Blossey, Ralf

2012-01-01

This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

Self-assembly of dodecaphenyl POSS thin films

Science.gov (United States)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Organic thin films and surfaces directions for the nineties

CERN Document Server

Ulman, Abraham

1995-01-01

Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

Electrocrystallization and scanning probe microscopy of ceramic thin films and superlattices

Science.gov (United States)

Hung, Chen-Jen

This dissertation presents an investigation of the electrocrystallization and scanning probe microscopy of ceramic thin films and superlattices. All of the films were deposited from aqueous solution at room temperature with no subsequent heat treatment needed to effect crystallization. Thallium(III) oxide defect chemistry superlattices were electrodeposited by pulsing the applied overpotential during deposition. The defect chemistry of the oxide is dependent on the applied overpotential. High overpotentials favor oxygen vacancies, while low overpotentials favor cation interstitials. Nanometer-scale holes were formed in thin thallium(III) oxide films using the scanning tunneling microscope in humid ambient conditions. Both cathodic and anodic etching reactions were performed on this metal oxide surface. The hole formation was attributed to localized electrochemical etching reactions beneath the STM tip. The scanning tunneling microscope (STM) was also used to both induce local surface modifications and image cleaved Pb-Tl-O superlattices. A trench of 100 nm in width, 32 nm in depth, and over 1 μm in length was formed after sweeping a bias voltage of ±2.5 V for 1 minute using a fixed STM tip. It has been suggested that STM results obtained under ambient conditions must be evaluated with great care because of the possibility of localized electrochemcial reactions. A novel synthesis method for the production of Cu(II) oxide from an alkaline solution containing Cu(II) tartrate was developed. Rietveld refinement of the cupric oxide films reveals pure Cu(II) oxide with no Cu(I) oxide present in the film.

Novel chemical analysis for thin films

International Nuclear Information System (INIS)

Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji

1991-01-01

Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)

Fluorine-doped tin oxide surfaces modified by self-assembled alkanethiols for thin-film devices

Energy Technology Data Exchange (ETDEWEB)

Alves, A.C.T.; Gomes, D.J.C.; Silva, J.R.; Silva, G.B., E-mail: george@cpd.ufmt.br

2013-08-15

In this work, we have investigated self-assembled monolayers (SAMs) from alkanethiols on fluorine-doped tin oxide (FTO) surfaces, which were used as an anode for thin-film devices prepared from the conductive copolymer so-called sulfonated poly(thiophene-3-[2-(2-methoxyethoxy) ethoxy]-2,5-diyl) (S-P3MEET). The assembled monolayers were characterized by using wetting contact angle, atomic force microscopy, and electrical measurements. The results indicated that dodecanethiol molecules, CH{sub 3}(CH{sub 2}){sub 11}SH, were well assembled on the FTO surfaces. In addition, it was found similar values of wetting contact angle for dodecanethiol assembled on both FTO and Au surfaces. Concerning the thin-film device, current–voltage analysis revealed a hysteresis. This behavior was associated to a charge-trapping effect and also to structural changes of the SAMs. Finally, charge injection capability of tin oxide electrodes can be improved by using SAMs and then this approach can plays an important role in molecular-scale electronic devices.

Nanostructured thin film coatings with different strengthening effects

Directory of Open Access Journals (Sweden)

Panfilov Yury

2017-01-01

Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

Thin Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K.

1998-11-19

The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

Thin films: Past, present, future

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K

1995-04-01

This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

Non-linear optics of nano-scale pentacene thin film

Science.gov (United States)

Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

2016-07-01

We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.

Oxidation of ruthenium thin films using atomic oxygen

Energy Technology Data Exchange (ETDEWEB)

McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

2015-12-31

In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

Electrochemical impedance spectroscopy analysis of a thin polymer film-based micro-direct methanol fuel cell

Science.gov (United States)

Schulz, Tobias; Weinmüller, Christian; Nabavi, Majid; Poulikakos, Dimos

A single cell micro-direct methanol fuel cell (micro-DMFC) was investigated using electrochemical impedance spectroscopy. The electrodes consisted of thin, flexible polymer (SU8) film microchannel structures fabricated in-house using microfabrication techniques. AC impedance spectroscopy was used to separate contributions to the overall cell polarization from the anode, cathode and membrane. A clear distinction between the different electrochemical phenomena occurring in the micro-DMFC, especially the distinction between double layer charging and Faradaic reactions was shown. The effect of fuel flow rate, temperature, and anode flow channel structure on the impedance of the electrode reactions and membrane/electrode double layer charging were investigated. Analysis of impedance data revealed that the performance of the test cell was largely limited by the presence of intermediate carbon monoxide in the anode reaction. Higher temperatures increase cell performance by enabling intermediate CO to be oxidized at much higher rates. The results also revealed that serpentine anode flow microchannels show a lower tendency to intermediate CO coverage and a more stable cell behavior than parallel microchannels.

Thin Films in the Photovoltaic Industry

International Nuclear Information System (INIS)

Jaeger-Waldau, A.

2008-03-01

In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

Nanostructured thin films and coatings functional properties

CERN Document Server

Zhang, Sam

2010-01-01

The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

Effects of benzotriazole on anodized film formed on AZ31B magnesium alloy in environmental-friendly electrolyte

International Nuclear Information System (INIS)

Guo Xinghua; An Maozhong; Yang Peixia; Li Haixian; Su Caina

2009-01-01

An environmental-friendly electrolyte of silicate and borate, which contained an addition agent of 1H-benzotriazole (BTA) with low toxicity (LD50 of 965 mg/kg), was used to prepare an anodized film on AZ31B magnesium alloy under the constant current density of 1.5 A/dm 2 at room temperature. Effects of BTA on the properties of the anodized film were studied by scanning electron microscopy (SEM), energy dispersion spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), loss weight measurement, potentiodynamic polarization and electrochemical impedance spectroscopy (EIS), respectively. The results demonstrated that anodized growth process, surface morphology, thickness, phase structure and corrosion resistance of the anodized film were strongly dependant on the BTA concentration, which might be attributed to the formation of an BTA adsorption layer on magnesium substrate surface. When the BTA concentration was 5 g/L in the electrolyte, a compact and thick anodized film could provide excellent corrosion resistance for AZ31B magnesium alloy.

Intrinsically conductive polymer thin film piezoresistors

DEFF Research Database (Denmark)

Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

2008-01-01

We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors

Science.gov (United States)

Kamijyo, Masahiro; Onozuka, Tomotake; Yoshida, Naoto; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

2004-09-01

Microcrystalline ZrO2 and HfO2 thin film capacitors were prepared by anodizing sputter-deposited Zr and Hf films. The thermal degradation behavior of both anodized capacitors was clarified by the measurement of their capacitance properties and Auger depth profiles before and after heat treatment in air. As a result, it is confirmed that the heat-resistance property of the HfO2 anodized capacitor is superior to that of the ZrO2 capacitor. In addition, it is revealed that the thermal degradation of the ZrO2 anodized capacitor is caused by the diffusion of Zr atoms from the underlying layer into the ZrO2 anodized layer, while that of the HfO2 anodized capacitor is caused by the diffusion of oxygen atoms from the anodized layer into the underlying Hf layer.

Thermal conductivity model for nanoporous thin films

Science.gov (United States)

Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

2018-03-01

Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

Photoinduced hydrophobic surface of graphene oxide thin films

International Nuclear Information System (INIS)

Zhang Xiaoyan; Song Peng; Cui Xiaoli

2012-01-01

Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

Optical thin film deposition

International Nuclear Information System (INIS)

Macleod, H.A.

1979-01-01

The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

Optical thin films and coatings from materials to applications

CERN Document Server

Flory, Francois

2013-01-01

Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

XPS characterization of the anodic oxide film formed on uranium metal in sodium hydroxide solution

International Nuclear Information System (INIS)

Fu Xiaoguo; Wang Xiaolin; Guo Huanjun; Wang Qingfu; Zhao Zhengping; Zhong Yongqiang

2002-01-01

X-ray photoelectron spectroscopy (XPS) is used to examine the anodic oxide film formed on uranium metal in 0.8 mol/L NaOH solution. The U4f 7/2 fitting spectra suggests that the anodic oxide film is composed of uranium trioxide and a small amount of UO 2+x . Under UHV condition, the U4f peak shifts to the lower binding energy, while a gradual increase in the intensity of U5f peak and the broad of U4f peak are also observed. All of these changes are due to reduction of uranium trioxide in the anodic oxide film. XPS quantitative analysis confirms the occurrence of reduction reaction

Characterization of Novel Thin-Films and Structures for Integrated Circuit and Photovoltaic Applications

Science.gov (United States)

Zhao, Zhao

is employed. The electrical and structural characterization of hole transfer layers (HTLs) in OSCs reveals MoO3 is the compatible HTL for TAgT anode. In the end, the reactive ink printed Ag film for solar cell contact application is studied by characterizing its electromigration lifetime. A percolative model is proposed and validated for predicting the resistivity and lifetime of printed Ag thin films containing porous structure.

Sputtering materials for VLSI and thin film devices

CERN Document Server

Sarkar, Jaydeep

2010-01-01

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

Science.gov (United States)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

Structural and morphological changes in pseudobarrier films of anodic aluminum oxide caused by irradiation with high-energy particles

International Nuclear Information System (INIS)

Chernykh, M.A.; Belov, V.T.

1988-01-01

We have studied the structural and morphological changes, occurring under the electron beam in pseudobarrier films of anodic aluminum oxide, prepared in seven different solutions and irradiated beforehand by protons of x-rays, with the aim of elucidating the structure of anodic aluminum oxides. An increased stability of the pseudobarrier films of anodic aluminum oxide has been observed towards the action of the electron beam of an UEMV-100K microscope at standard working regimes (75 keV) as a result of irradiation with protons or x-rays. A difference has been found to exist between structural and morphological changes of anodic aluminum oxide films, prepared in different solutions, when irradiated with high-energy particles. A structural and phase inhomogeneity of amorphous pseudobarrier films of anodic aluminum oxide has been detected and its influence on the character of solid-phase transformations under the maximum-intensity electron beam

Formation and dissolution of the anodic oxide film on zirconium in alcoholic aqueous solutions

International Nuclear Information System (INIS)

Mogoda, A.S.

1995-01-01

The dissolution behavior of the anodic oxide film formed in alcoholic aqueous solutions was studied. Results indicated the dissolution mechanism of the duplex oxide film followed a zero-order rate equation. The increase in methanol concentration in the formation medium (phosphoric acid [H 3 PO 4 ]) resulted in formation of an oxide film that incorporated little phosphate ion and that dissolved at a low rate. The dissolution rate of the oxide film decreased with increasing methanol concentration in the dissolution medium. This was attributed to the increase in the viscosity of the medium, which led to a decrease in the diffusion coefficient of the dissolution product of the zirconium oxide film. Dissolution of the anodic oxide film also was investigated as a function of the chain length of alcohols

Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

KAUST Repository

Yave, Wilfredo

2010-09-01

Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform thickness (<100 nm) is crucial. By using a tailor-made polymer and by controlling the nanofabrication conditions, we developed and manufactured defect-free ultra-thin film membranes with unmatched carbon dioxide permeances, i.e. >5 m3 (STP) m-2 h -1 bar-1. The permeances are extremely high, because the membranes are made from a CO2 philic polymer material and they are only a few tens of nanometers thin. Thus, these thin film membranes have potential application in the treatment of large gas streams under low pressure like, e.g., carbon dioxide separation from flue gas. © 2010 IOP Publishing Ltd.

Boric/sulfuric acid anodizing of aluminum alloys 2024 and 7075: Film growth and corrosion resistance

Energy Technology Data Exchange (ETDEWEB)

Thompson, G.E.; Zhang, L.; Smith, C.J.E.; Skeldon, P.

1999-11-01

The influence of boric acid (H{sub 3}BO{sub 3}) additions to sulfuric acid (H{sub 2}SO{sub 4}) were examined for the anodizing of Al 2024-T3 (UNS A92024) and Al 7075-T6 (UNS A97075) alloys at constant voltage. Alloys were pretreated by electropolishing, by sodium dichromate (Na{sub 2}Cr{sub 2}O{sub 7})/H{sub 2}SO{sub 4} (CSA) etching, or by alkaline etching. Current-time responses revealed insignificant dependence on the concentration of H{sub 3}BO{sub 3} to 50 g/L. Pretreatments affected the initial film development prior to the establishment of the steady-state morphology of the porous film, which was related to the different compositions and morphologies of pretreated surfaces. More detailed studies of the Al 7075-T6 alloy indicated negligible effects of H{sub 3}BO{sub 3} on the coating weight, morphology of the anodic film, and thickening rate of the film, or corrosion resistance provided by the film. In salt spray tests, unsealed films formed in H{sub 2}SO{sub 4} or mixed acid yielded similar poor corrosion resistances, which were inferior to that provided by anodizing in chromic acid (H{sub 2}CrO{sub 4}). Sealing of films in deionized water, or preferably in chromate solution, improved corrosion resistance, although not matching the far superior performance provided by H{sub 2}CrO{sub 4} anodizing and sealing.

Thin film bismuth iron oxides useful for piezoelectric devices

Science.gov (United States)

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Formation of barrier-type anodic films on ZE41 magnesium alloy in a fluoride/glycerol electrolyte

International Nuclear Information System (INIS)

Hernández-López, J.M.; Němcová, A.; Zhong, X.L.; Liu, H.; Arenas, M.A.; Haigh, S.J.; Burke, M.G.; Skeldon, P.; Thompson, G.E.

2014-01-01

Highlights: • Barrier anodic films formed on ZE41 Mg alloy in glycerol/fluoride electrolyte. • Films contain oxygen and fluorine species; formation ratio ∼1.3 nm V −1 . • Nanocrystalline film structure, with MgO and MgF 2. • Zinc enrichment in alloy beneath anodic film. • Modified film formed above Mg-Zn-RE second phase. - Abstract: Barrier-type, nanocrystalline anodic films have been formed on a ZE41 magnesium alloy under a constant current density of 5 mA cm −2 in a glycerol/fluoride electrolyte, containing 5 vol.% of added water, at 293 K. The films contain magnesium, fluorine and oxygen as the major species, and lower amounts of alloying element species. The films grow at an efficiency of ∼0.8 to 0.9, with a formation ratio in the range of ∼1.2 to 1.4 nm V −1 at the matrix regions and with a ratio of ∼1.8 nm V −1 at Mg-Zn-RE second phase. At the former regions, rare earth species are enriched at the film surface and zinc is enriched in the alloy. A carbon- and oxygen-rich band within the film suggests that the films grow at the metal/film and film/electrolyte interfaces

Tools to synthesize the learning of thin films

International Nuclear Information System (INIS)

Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

2011-01-01

After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.

Molecular simulation of freestanding amorphous nickel thin films

Energy Technology Data Exchange (ETDEWEB)

Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

2013-10-31

Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

An Analysis of Mechanical Properties of Anodized Aluminum Film at High Stress

Science.gov (United States)

Zhao, Xixi; Wei, Guoying; Yu, Yundan; Guo, Yuemei; Zhang, Ao

2015-10-01

In this paper, a new environmental-friendly electrolyte containing sulfuric acid and tartaric acid has been used as the substitute of chromic acid for anodization. The work discussed the influence of anodizing voltages on the fatigue life of anodized Al 2024-T3 by performing fatigue tests with 0.1 stress ratio (R) at 320 MPa. Meanwhile the fatigue cycles to failure, yield strength, tensile strength and fracture surface of anodic films at different conditions were investigated. The results showed that the fatigue life of anodized and sealed specimens reduced a lot compared to aluminum alloy, which can be attributed to the crack sites initiated at the oxide layer. The fracture surface analyses also revealed that the number of crack initiation sites enlarged with the increase of anodizing voltage.

Resistivity of thiol-modified gold thin films

International Nuclear Information System (INIS)

Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

2014-01-01

In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography

Resistivity of thiol-modified gold thin films

Energy Technology Data Exchange (ETDEWEB)

Correa-Puerta, Jonathan [Instituto de Física, Pontificia Universidad Católica de Valparaíso, Av. Universidad 330, Curauma, Valparaíso (Chile); Del Campo, Valeria [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Henríquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Häberle, Patricio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

2014-11-03

In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography.

Modelling the growth process of porous aluminum oxide film during anodization

International Nuclear Information System (INIS)

Aryslanova, E M; Alfimov, A V; Chivilikhin, S A

2015-01-01

Currently it has become important for the development of metamaterials and nanotechnology to obtain regular self-assembled structures. One such structure is porous anodic alumina film that consists of hexagonally packed cylindrical pores. In this work we consider the anodization process, our model takes into account the influence of layers of aluminum and electrolyte on the rate of growth of aluminum oxide, as well as the effect of surface diffusion. In present work we consider those effects. And as a result of our model we obtain the minimum distance between centers of alumina pores in the beginning of anodizing process. (paper)

Modelling the growth process of porous aluminum oxide film during anodization

Science.gov (United States)

Aryslanova, E. M.; Alfimov, A. V.; Chivilikhin, S. A.

2015-11-01

Currently it has become important for the development of metamaterials and nanotechnology to obtain regular self-assembled structures. One such structure is porous anodic alumina film that consists of hexagonally packed cylindrical pores. In this work we consider the anodization process, our model takes into account the influence of layers of aluminum and electrolyte on the rate of growth of aluminum oxide, as well as the effect of surface diffusion. In present work we consider those effects. And as a result of our model we obtain the minimum distance between centers of alumina pores in the beginning of anodizing process.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

2017-08-15

Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Advanced morphological analysis of patterns of thin anodic porous alumina

Energy Technology Data Exchange (ETDEWEB)

Toccafondi, C. [Istituto Italiano di Tecnologia, Department of Nanophysics, Via Morego 30, Genova I 16163 (Italy); Istituto Italiano di Tecnologia, Department of Nanostructures, Via Morego 30, Genova I 16163 (Italy); Stępniowski, W.J. [Department of Advanced Materials and Technologies, Faculty of Advanced Technologies and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Leoncini, M. [Istituto Italiano di Tecnologia, Department of Nanostructures, Via Morego 30, Genova I 16163 (Italy); Salerno, M., E-mail: marco.salerno@iit.it [Istituto Italiano di Tecnologia, Department of Nanophysics, Via Morego 30, Genova I 16163 (Italy)

2014-08-15

Different conditions of fabrication of thin anodic porous alumina on glass substrates have been explored, obtaining two sets of samples with varying pore density and porosity, respectively. The patterns of pores have been imaged by high resolution scanning electron microscopy and analyzed by innovative methods. The regularity ratio has been extracted from radial profiles of the fast Fourier transforms of the images. Additionally, the Minkowski measures have been calculated. It was first observed that the regularity ratio averaged across all directions is properly corrected by the coefficient previously determined in the literature. Furthermore, the angularly averaged regularity ratio for the thin porous alumina made during short single-step anodizations is lower than that of hexagonal patterns of pores as for thick porous alumina from aluminum electropolishing and two-step anodization. Therefore, the regularity ratio represents a reliable measure of pattern order. At the same time, the lower angular spread of the regularity ratio shows that disordered porous alumina is more isotropic. Within each set, when changing either pore density or porosity, both regularity and isotropy remain rather constant, showing consistent fabrication quality of the experimental patterns. Minor deviations are tentatively discussed with the aid of the Minkowski measures, and the slight decrease in both regularity and isotropy for the final data-points of the porosity set is ascribed to excess pore opening and consequent pore merging. - Highlights: • Thin porous alumina is partly self-ordered and pattern analysis is required. • Regularity ratio is often misused: we fix the averaging and consider its spread. • We also apply the mathematical tool of Minkowski measures, new in this field. • Regularity ratio shows pattern isotropy and Minkowski helps in assessment. • General agreement with perfect artificial patterns confirms the good manufacturing.

Characterization of nanocrystalline cadmium telluride thin films ...

Indian Academy of Sciences (India)

Unknown

tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

Photoluminescence properties of perovskite multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

2016-07-01

Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

Optical characteristics of the thin-film scintillator detector

International Nuclear Information System (INIS)

Muga, L.; Burnsed, D.

1976-01-01

A study of the thin-film detector (TFD) was made in which various light guide and scintillator film support configurations were tested for efficiency of light coupling. Masking of selected portions of the photomultiplier (PM) tube face revealed the extent to which emitted light was received at the exposed PM surfaces. By blocking off selected areas of the scintillator film surface from direct view of the PM tube faces, a measure of the light-guiding efficiency of the film and its support could be estimated. The picture that emerges is that, as the light which is initially trapped in the thin film spreads radially outward from the ion entrance/exit point, it is scattered out of the film by minute imperfections. Optimum signals were obtained by a configuration in which the thin scintillator film was supported on a thin rectangular Celluloid frame inserted within a highly polished metal cylindrical sleeve

X-ray spectral determination of chemical state of phosphorus and sulfur in anodic oxide films on niobium

International Nuclear Information System (INIS)

Bokij, L.P.; Kostikov, Yu.P.

1989-01-01

Chemical forms of phosphorus and sulfur in niobium oxide anodic film, obtained by electrochemical technique using niobium in H 2 SO 4 and H 3 PO 4 aqueous solutions, are determined using data on chemical shifts of X-ray emission lines. Films represent Nb 2 O 5(1-γ) (SO 4 ) 5γ and Nb 2 O 5(1-γ) (PO 4 ) 10γ/3 (γ -share of oxygen substituted by acid anion) composition oxosalts. Electrolyte role in formation of niobium anodic oxide structure and effect of phosphorus and sulfur compounds on anodic film conductivity are determined

Morphology, structural and optical properties of iron oxide thin film photoanodes in photoelectrochemical cell: Effect of electrochemical oxidation

Science.gov (United States)

Maabong, Kelebogile; Machatine, Augusto G.; Hu, Yelin; Braun, Artur; Nambala, Fred J.; Diale, Mmantsae

2016-01-01

Hematite (α-Fe2O3) is a promising semiconductor as photoanode in solar hydrogen production from photoelectrolysis of water due to its appropriate band gap, low cost and high electrochemical stability in aqueous caustic electrolytes. Operation of such photoanode in a biased photoelectrochemical cell constitutes an anodization with consequent redox reactions at the electrode surface. α-Fe2O3 thin film photoanodes were prepared by simple and inexpensive dip coating method on fluorine doped tin oxide (FTO) glass substrate, annealed in air at 500 °C for 2 h, then electrochemically oxidized (anodized) in 1 M KOH at 500 mV for 1 min in dark and light conditions. Changes in structural properties and morphology of α-Fe2O3 nanoparticles films were investigated by XRD, Raman spectroscopy and a high resolution FE-SEM. The average grain size was observed to increase from 57 nm for pristine samples to 73 and 77 nm for anodized samples in dark and light respectively. Broadening and red shift in Raman spectra in anodized samples may be attributed to lattice expansion upon oxidation. The UV-visible measurements revealed enhanced absorption in the photoanodes after the treatment. The findings suggest that the anodization of the photoelectrode in a biased cell causes not only changes of the molecular structure at the surface, but also changes in the crystallographic structure which can be detected with x-ray diffractometry.

Morphology, structural and optical properties of iron oxide thin film photoanodes in photoelectrochemical cell: Effect of electrochemical oxidation

International Nuclear Information System (INIS)

Maabong, Kelebogile; Machatine, Augusto G.; Hu, Yelin; Braun, Artur; Nambala, Fred J.; Diale, Mmantsae

2016-01-01

Hematite (α-Fe_2O_3) is a promising semiconductor as photoanode in solar hydrogen production from photoelectrolysis of water due to its appropriate band gap, low cost and high electrochemical stability in aqueous caustic electrolytes. Operation of such photoanode in a biased photoelectrochemical cell constitutes an anodization with consequent redox reactions at the electrode surface. α-Fe_2O_3 thin film photoanodes were prepared by simple and inexpensive dip coating method on fluorine doped tin oxide (FTO) glass substrate, annealed in air at 500 °C for 2 h, then electrochemically oxidized (anodized) in 1 M KOH at 500 mV for 1 min in dark and light conditions. Changes in structural properties and morphology of α-Fe_2O_3 nanoparticles films were investigated by XRD, Raman spectroscopy and a high resolution FE-SEM. The average grain size was observed to increase from ~57 nm for pristine samples to 73 and 77 nm for anodized samples in dark and light respectively. Broadening and red shift in Raman spectra in anodized samples may be attributed to lattice expansion upon oxidation. The UV–visible measurements revealed enhanced absorption in the photoanodes after the treatment. The findings suggest that the anodization of the photoelectrode in a biased cell causes not only changes of the molecular structure at the surface, but also changes in the crystallographic structure which can be detected with x-ray diffractometry.

Morphology, structural and optical properties of iron oxide thin film photoanodes in photoelectrochemical cell: Effect of electrochemical oxidation

Energy Technology Data Exchange (ETDEWEB)

Maabong, Kelebogile [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Laboratory of High Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Department of Physics, University of Botswana, Private Bag 002, Gaborone (Botswana); Machatine, Augusto G. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Hu, Yelin [Laboratory of High Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Laboratory for Photonics and Interfaces, EPFL, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Braun, Artur [Laboratory of High Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Nambala, Fred J. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); University of Zambia, Box 32379, Great East Road Campus, Lusaka (Zambia); Diale, Mmantsae, E-mail: mmantsae.diale@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Laboratory of High Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf (Switzerland)

2016-01-01

Hematite (α-Fe{sub 2}O{sub 3}) is a promising semiconductor as photoanode in solar hydrogen production from photoelectrolysis of water due to its appropriate band gap, low cost and high electrochemical stability in aqueous caustic electrolytes. Operation of such photoanode in a biased photoelectrochemical cell constitutes an anodization with consequent redox reactions at the electrode surface. α-Fe{sub 2}O{sub 3} thin film photoanodes were prepared by simple and inexpensive dip coating method on fluorine doped tin oxide (FTO) glass substrate, annealed in air at 500 °C for 2 h, then electrochemically oxidized (anodized) in 1 M KOH at 500 mV for 1 min in dark and light conditions. Changes in structural properties and morphology of α-Fe{sub 2}O{sub 3} nanoparticles films were investigated by XRD, Raman spectroscopy and a high resolution FE-SEM. The average grain size was observed to increase from ~57 nm for pristine samples to 73 and 77 nm for anodized samples in dark and light respectively. Broadening and red shift in Raman spectra in anodized samples may be attributed to lattice expansion upon oxidation. The UV–visible measurements revealed enhanced absorption in the photoanodes after the treatment. The findings suggest that the anodization of the photoelectrode in a biased cell causes not only changes of the molecular structure at the surface, but also changes in the crystallographic structure which can be detected with x-ray diffractometry.

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

Energy Technology Data Exchange (ETDEWEB)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

Fractal and multifractal analysis of LiF thin film surface

International Nuclear Information System (INIS)

Yadav, R.P.; Dwivedi, S.; Mittal, A.K.; Kumar, M.; Pandey, A.C.

2012-01-01

Highlights: ► Fractal and multifractal analysis of surface morphologies of the LiF thin films. ► Complexity and roughness of the LiF thin films increases as thickness increases. ► LiF thin films are multifractal in nature. ► Strength of the multifractality increases with thickness of the film. - Abstract: Fractal and multifractal analysis is performed on the atomic force microscopy (AFM) images of the surface morphologies of the LiF thin films of thickness 10 nm, 20 nm, and 40 nm, respectively. Autocorrelation function, height–height correlation function, and two-dimensional multifractal detrended fluctuation analysis (MFDFA) are used for characterizing the surface. It is found that the interface width, average roughness, lateral correlation length, and fractal dimension of the LiF thin film increase with the thickness of the film, whereas the roughness exponent decreases with thickness. Thus, the complexity and roughness of the LiF thin films increases as thickness increases. It is also demonstrated that the LiF thin films are multifractal in nature. Strength of the multifractality increases with thickness of the film.

Preparation and characterization of vanadium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

2013-04-16

The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

Laser nanostructuring of ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

2016-06-30

Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

Nanoporous anodic aluminum oxide with a long-range order and tunable cell sizes by phosphoric acid anodization on pre-patterned substrates

Science.gov (United States)

Surawathanawises, Krissada; Cheng, Xuanhong

2014-01-01

Nanoporous anodic aluminum oxide (AAO) has been explored for various applications due to its regular cell arrangement and relatively easy fabrication processes. However, conventional two-step anodization based on self-organization only allows the fabrication of a few discrete cell sizes and formation of small domains of hexagonally packed pores. Recent efforts to pre-pattern aluminum followed with anodization significantly improve the regularity and available pore geometries in AAO, while systematic study of the anodization condition, especially the impact of acid composition on pore formation guided by nanoindentation is still lacking. In this work, we pre-patterned aluminium thin films using ordered monolayers of silica beads and formed porous AAO in a single-step anodization in phosphoric acid. Controllable cell sizes ranging from 280 nm to 760 nm were obtained, matching the diameters of the silica nanobead molds used. This range of cell size is significantly greater than what has been reported for AAO formed in phosphoric acid in the literature. In addition, the relationships between the acid concentration, cell size, pore size, anodization voltage and film growth rate were studied quantitatively. The results are consistent with the theory of oxide formation through an electrochemical reaction. Not only does this study provide useful operational conditions of nanoindentation induced anodization in phosphoric acid, it also generates significant information for fundamental understanding of AAO formation. PMID:24535886

Restructuring in block copolymer thin films

DEFF Research Database (Denmark)

Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

2017-01-01

Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

Nanocoatings and ultra-thin films technologies and applications

CERN Document Server

Tiginyanu, Ion

2011-01-01

Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

Nanosphere lithography applied to magnetic thin films

Science.gov (United States)

Gleason, Russell

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

Two-Step Cycle for Producing Multiple Anodic Aluminum Oxide (AAO) Films with Increasing Long-Range Order.

Science.gov (United States)

Choudhary, Eric; Szalai, Veronika

2016-01-01

Nanoporous anodic aluminum oxide (AAO) membranes are being used for an increasing number of applications. However, the original two-step anodization method in which the first anodization is sacrificial to pre-pattern the second is still widely used to produce them. This method provides relatively low throughput and material utilization as half of the films are discarded. An alternative scheme that relies on alternating anodization and cathodic delamination is demonstrated that allows for the fabrication of several AAO films with only one sacrificial layer thus greatly improving total aluminum to alumina yield. The thickness for which the cathodic delamination performs best to yield full, unbroken AAO sheets is around 85 μm. Additionally, an image analysis method is used to quantify the degree of long-range ordering of the unit cells in the AAO films which was found to increase with each successive iteration of the fabrication cycle.

Mechanical measurements on lithium phosphorous oxynitride coated silicon thin film electrodes for lithium-ion batteries during lithiation and delithiation

Energy Technology Data Exchange (ETDEWEB)

Al-Obeidi, Ahmed, E-mail: alobeidi@mit.edu; Thompson, Carl V., E-mail: reiner.moenig@kit.edu, E-mail: cthomp@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Kramer, Dominik, E-mail: dominik.kramer@kit.edu; Mönig, Reiner, E-mail: reiner.moenig@kit.edu, E-mail: cthomp@mit.edu [Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), Helmholtzstraße 11, 89081 Ulm (Germany); Boles, Steven T., E-mail: steven.t.boles@polyu.edu.hk [Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Hong Kong Polytechnic University, 11 Yuk Choi Rd, Hung Hom (Hong Kong)

2016-08-15

The development of large stresses during lithiation and delithiation drives mechanical and chemical degradation processes (cracking and electrolyte decomposition) in thin film silicon anodes that complicate the study of normal electrochemical and mechanical processes. To reduce these effects, lithium phosphorous oxynitride (LiPON) coatings were applied to silicon thin film electrodes. Applying a LiPON coating has two purposes. First, the coating acts as a stable artificial solid electrolyte interphase. Second, it limits mechanical degradation by retaining the electrode's planar morphology during cycling. The development of stress in LiPON-coated electrodes was monitored using substrate curvature measurements. LiPON-coated electrodes displayed highly reproducible cycle-to-cycle behavior, unlike uncoated electrodes which had poorer coulombic efficiency and exhibited a continual loss in stress magnitude with continued cycling due to film fracture. The improved mechanical stability of the coated silicon electrodes allowed for a better investigation of rate effects and variations of mechanical properties during electrochemical cycling.

Bandtail characteristics in InN thin films

International Nuclear Information System (INIS)

Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

2002-01-01

The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers

Thin films of mixed metal compounds

Science.gov (United States)

Mickelsen, Reid A.; Chen, Wen S.

1985-01-01

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Thin-Film Power Transformers

Science.gov (United States)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Magnetic damping phenomena in ferromagnetic thin-films and multilayers

Science.gov (United States)

Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

2017-11-01

Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

Cobalt nanosheet arrays supported silicon film as anode materials for lithium ion batteries

International Nuclear Information System (INIS)

Huang, X.H.; Wu, J.B.; Cao, Y.Q.; Zhang, P.; Lin, Y.; Guo, R.Q.

2016-01-01

Cobalt nanosheet arrays supported silicon film is prepared and used as anode materials for lithium ion batteries. The film is fabricated using chemical bath deposition, hydrogen reduction and radio-frequency magnetron sputtering techniques. The microstructure and morphology are characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). In this composite film, the silicon layer is supported by interconnected aligned cobalt nanosheet arrays that act as the three-dimensional current collector and buffering network. The electrochemical performance as anode materials for lithium ion batteries is investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results show that the film prepared by sputtering for 1500 s exhibits high capacity, good rate capability and stable cycle ability. It is believed that the cobalt nanosheet arrays play important roles in the electrochemical performance of the silicon layer.

Influence of molybdate species on the tartaric acid/sulphuric acid anodic films grown on AA2024 T3 aerospace alloy

Energy Technology Data Exchange (ETDEWEB)

Garcia-Rubio, M. [Departamento de Quimica-Fisica Aplicada, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Department of Surface Technologies, Engineering of Materials and Processes, Airbus Spain, Av. John Lennon s/n 28906 Getafe (Spain); Ocon, P. [Departamento de Quimica-Fisica Aplicada, Universidad Autonoma de Madrid, 28049 Madrid (Spain)], E-mail: pilar.ocon@uam.es; Climent-Font, A. [Departamento de Fisica Aplicada, Universidad Autonoma de Madrid (UAM), 28049 Madrid (Spain); Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), 28049 Madrid (Spain); Smith, R.W. [Unidad de Microanalisis de Materiales, Parque Cientifico de Madrid (PCM), Campus de Cantoblanco, 28049 Madrid (Spain); Curioni, M.; Thompson, G.E.; Skeldon, P. [Corrosion and Protection Centre, School of Materials, University of Manchester, M60 1QD England (United Kingdom); Lavia, A.; Garcia, I. [Department of Surface Technologies, Engineering of Materials and Processes, Airbus Spain, Av. John Lennon s/n 28906 Getafe (Spain)

2009-09-15

AA2024 T3 alloy specimens have been anodised in tartaric acid/sulphuric media and tartaric acid/sulphuric media containing sodium molybdate; molybdate species were added to the anodising bath to enhance further the protection provided by the porous anodic film developed over the macroscopic alloy surface. Morphological characterisation of the anodic films formed in both electrolytes was undertaken using scanning electron and transmission electron microscopies; the chemical compositions of the films were determined by Rutherford backscattering spectroscopy that was complemented by elemental depth profiling using rf-glow discharge optical emission spectrometry. The electrochemical behaviour was evaluated using potentiodynamic polarisations and electrochemical impedance spectroscopy; the corrosion performance was examined after salt spray testing. The porous anodic film morphology was little influenced by the addition of molybdate salt, although thinner films were generated in its presence. Chemical composition of the anodic film was roughly similar; however, addition of sodium molybdate in the anodizing bath resulted in residues of molybdate species in the porous skeleton and improved corrosion resistance measured by electrochemical techniques that was confirmed by salt spray testing.

Influence of molybdate species on the tartaric acid/sulphuric acid anodic films grown on AA2024 T3 aerospace alloy

International Nuclear Information System (INIS)

Garcia-Rubio, M.; Ocon, P.; Climent-Font, A.; Smith, R.W.; Curioni, M.; Thompson, G.E.; Skeldon, P.; Lavia, A.; Garcia, I.

2009-01-01

AA2024 T3 alloy specimens have been anodised in tartaric acid/sulphuric media and tartaric acid/sulphuric media containing sodium molybdate; molybdate species were added to the anodising bath to enhance further the protection provided by the porous anodic film developed over the macroscopic alloy surface. Morphological characterisation of the anodic films formed in both electrolytes was undertaken using scanning electron and transmission electron microscopies; the chemical compositions of the films were determined by Rutherford backscattering spectroscopy that was complemented by elemental depth profiling using rf-glow discharge optical emission spectrometry. The electrochemical behaviour was evaluated using potentiodynamic polarisations and electrochemical impedance spectroscopy; the corrosion performance was examined after salt spray testing. The porous anodic film morphology was little influenced by the addition of molybdate salt, although thinner films were generated in its presence. Chemical composition of the anodic film was roughly similar; however, addition of sodium molybdate in the anodizing bath resulted in residues of molybdate species in the porous skeleton and improved corrosion resistance measured by electrochemical techniques that was confirmed by salt spray testing.

Chemical vapour deposition of thin-film dielectrics

International Nuclear Information System (INIS)

Vasilev, Vladislav Yu; Repinsky, Sergei M

2005-01-01

Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

Residual stress in spin-cast polyurethane thin films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)

2015-01-19

Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.

Simulated Thin-Film Growth and Imaging

Science.gov (United States)

Schillaci, Michael

2001-06-01

Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

Nanostructured thin films as functional coatings

Energy Technology Data Exchange (ETDEWEB)

Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

2010-06-15

Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

Thin film characterization by resonantly excited internal standing waves

Energy Technology Data Exchange (ETDEWEB)

Di Fonzio, S [SINCROTRONE TRIESTE, Trieste (Italy)

1996-09-01

This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

Thin film ceramic thermocouples

Science.gov (United States)

Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

2011-01-01

A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

Optical properties of electrochemically deposited CuInSe sub 2 thin films

Energy Technology Data Exchange (ETDEWEB)

Guillen, C; Herrero, J [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1991-11-01

Polycrystalline thin films of CuInSe{sub 2} within a wide composition range have been electrochemically deposited. Their optical properties in the near-infrared and visible range, 400-2000 nm, have been studied in relation to the deposition potential and film thickness. An absorption coefficient ({alpha}) as high as 10{sup 5} cm{sup -1} is observed at short wavelength ({lambda} < 700 nm), but near the band edge {alpha} has a value about 10{sup 4} cm{sup -1}. The observed absorption coefficient variation is due to an allowed direct transition with an energy in the range 0.88-0.96 eV and an additional forbidden direct transition with an energy in the range 1.32-1.41 eV, where the absorption coefficient depends on the deposition potential, and the possible phase nature of the material, with band gap narrowing when the potential becomes anodic. The values of {alpha} and transition energies also depend on the film thickness for samples up to 0.6 {mu}m thick. (orig.).

Photoluminescence of electron beam evaporated CaS:Bi thin films

CERN Document Server

Smet, P F; Poelman, D R; Meirhaeghe, R L V

2003-01-01

For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

Excimer Laser Deposition of PLZT Thin Films

National Research Council Canada - National Science Library

Petersen, GAry

1991-01-01

.... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Lee, Fang-Wei [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)

2016-07-01

Highlights: • Nanoscale patterned sapphire substrate was prepared by anodic-aluminum-oxide etching mask. • Influence of aspect ratio of NPSS on structural and electrical properties of GaN films was studied. • Low dislocation density and high carrier mobility of GaN films were grown on high aspect ratio NPSS. - Abstract: This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 10{sup 8} cm{sup −2} for GaN on bare sapphire to 4.9 × 10{sup 8} cm{sup −2} for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm{sup 2}/Vs for GaN on bare sapphire to 199 cm{sup 2}/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with

Characterization of TiO{sub 2} thin films obtained by metal-organic chemical vapour deposition; Caracterizacao de filmes finos de TiO{sub 2} obtidos por deposicao quimica em fase vapor

Energy Technology Data Exchange (ETDEWEB)

Carriel, Rodrigo Crociati

2015-07-01

Titanium dioxide (TiO{sub 2}) thin films were grown on silicon substrate (100) by MOCVD process (chemical deposition of organometallic vapor phase). The films were grown at 400, 500, 600 and 700 ° C in a conventional horizontal equipment. Titanium tetraisopropoxide was used as source of both oxygen and titanium. Nitrogen was used as carrier and purge gas. X-ray diffraction technique was used for the characterization of the crystalline structure. Scanning electron microscopy with field emission gun was used to evaluate the morphology and thickness of the films. The films grown at 400 and 500°C presented anatase phase. The film grown at 600ºC presented rutile besides anatase phase, while the film grown at 700°C showed, in addition to anatase and rutile, brookite phase. In order to evaluate the electrochemical behavior of the films cyclic voltammetry technique was used. The tests revealed that the TiO2 films formed exclusively by the anatase phase exhibit strong capacitive character. The anodic current peak is directly proportional to the square root of the scanning rate for films grown at 500ºC, suggesting that linear diffusion is the predominant mechanism of cations transport. It was observed that in the film grown during 60 minutes the Na+ ions intercalation and deintercalation easily. The films grown in the other conditions did not present the anodic current peak, although charge was accumulated in the film. (author)

Physics of thin films advances in research and development

CERN Document Server

Hass, Georg; Vossen, John L

2013-01-01

Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

Effects of high dose gamma irradiation on ITO thin film properties

Energy Technology Data Exchange (ETDEWEB)

Alyamani, A. [National Nanotechnology Center, King Abdul-Aziz City for Science and Technology (KACST), Riyadh (Saudi Arabia); Mustapha, N., E-mail: nazirmustapha@hotmail.com [Dept. of Physics, College of Sciences, Al Imam Mohammad Ibn Saud Islamic University, P.O. Box 90950, Riyadh 11623 (Saudi Arabia)

2016-07-29

Transparent thin-film Indium Tin Oxides (ITO) were prepared on 0.7 mm thick glass substrates using a pulsed laser deposition (PLD) process with average thickness of 150 nm. The samples were then exposed to high gamma γ radiation doses by {sup 60}Co radioisotope. The films have been irradiated by performing exposure cycles up to 250 kGy total doses at room temperature. The surface structures before and after irradiation were analysed by x-ray diffraction. Atomic Force Microscopy (AFM) was performed on all samples before and after irradiation to investigate any change in the grain sizes, and also in the roughness of the ITO surface. We investigated the influence of γ irradiation on the spectra of transmittance T, in the ultraviolet-visible-near infrared spectrum using spectrophotometer measurements. Energy band gap E{sub g} was then calculated from the optical spectra for all ITO films. It was found that the optical band gap values decreased as the radiation dose was increased. To compare the effect of the irradiation on refractive index n and extinction coefficient k properties, additional measurements were done on the ITO samples before and after gamma irradiation using an ellipsometer. The optical constants n and k increased by increasing the irradiation doses. Electrical properties such as resistivity and sheet resistance were measured using the four-point probe method. The good optical, electrical and morphological properties maintained by the ITO films even after being exposed to high gamma irradiation doses, made them very favourable to be used as anodes for solar cells and as protective coatings in space windows. - Highlights: • Indium Tin Oxide (ITO) thin films were deposited by pulsed laser deposition. • Effects of Gamma irradiation were investigated. • Changes of optical transmission and electrical properties of ITO films were studied. • Intensity of the diffraction peaks and the film's structure changed with increasing irradiation doses. �

Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

1997-11-21

The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

Grating-coupled surface plasmon enhanced short-circuit current in organic thin-film photovoltaic cells.

Science.gov (United States)

Baba, Akira; Aoki, Nobutaka; Shinbo, Kazunari; Kato, Keizo; Kaneko, Futao

2011-06-01

In this study, we demonstrate the fabrication of grating-coupled surface plasmon resonance (SPR) enhanced organic thin-film photovoltaic cells and their improved photocurrent properties. The cell consists of a grating substrate/silver/P3HT:PCBM/PEDOT:PSS structure. Blu-ray disk recordable substrates are used as the diffraction grating substrates on which silver films are deposited by vacuum evaporation. P3HT:PCBM films are spin-coated on silver/grating substrates. Low conductivity PEDOT:PSS/PDADMAC layer-by-layer ultrathin films deposited on P3HT:PCBM films act as the hole transport layer, whereas high conductivity PEDOT:PSS films deposited by spin-coating act as the anode. SPR excitations are observed in the fabricated cells upon irradiation with white light. Up to a 2-fold increase in the short-circuit photocurrent is observed when the surface plasmon (SP) is excited on the silver gratings as compared to that without SP excitation. The finite-difference time-domain simulation indicates that the electric field in the P3HT:PCBM layer can be increased using the grating-coupled SP technique. © 2011 American Chemical Society

Field ion microscope studies on thin films

International Nuclear Information System (INIS)

Cavaleru, A.; Scortaru, A.

1976-01-01

A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)

The Structure and Stability of Molybdenum Ditelluride Thin Films

Directory of Open Access Journals (Sweden)

Zhouling Wang

2014-01-01

Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

Magnetic surfaces, thin films, and multilayers

International Nuclear Information System (INIS)

Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

1992-01-01

This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

Thin films prepared from tungstate glass matrix

Energy Technology Data Exchange (ETDEWEB)

Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

2008-01-30

Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.

The influence of different electrodeposition E/t programs on the photoelectrochemical properties of α-Fe2O3 thin films

International Nuclear Information System (INIS)

Schrebler, Ricardo S.; Altamirano, Hernan; Grez, Paula; Herrera, Francisco V.; Munoz, Eduardo C.; Ballesteros, Luis A.; Cordova, Ricardo A.; Gomez, Humberto; Dalchiele, Enrique A.

2010-01-01

In this work morphological, structural and photoelectrochemical properties of n-type α-Fe 2 O 3 (hematite) thin films synthetized by means of two different electrochemical procedures: potential cycling electrodeposition (PC) and potential pulsed electrodeposition (PP) have been studied. The X-ray diffraction measurements showed that the films obtained after a thermal treatment at 520 o C present a nanocrystalline character. Scanning electron microscopy allowed finding that hematite films obtained by PP technique exhibit nanostructured morphology. The electrochemical and capacitance (Mott-Schottky and parallel capacitance) measurements showed that when in the PC and PP procedures the anodic limit E λ,A is being made more anodic, a decrease of the majority carriers concentration (N D ) and the surface states number has been observed. The photovoltammetry measurements indicated that the hematite films formed with the PP technique present a photocurrent one order of magnitude higher than the ones exhibited by the iron oxide films formed by PC. For instance, PP hematite films exhibit photovoltaic conversion efficiencies of 0.96% which are 2.5 times higher than the corresponding to the PC ones (0.38%). The maximum incident photon-to-current efficiency measured at λ = 370 and 600 nm was observed for hematite films grown by the PP procedure. By means of the photocurrent transient technique a decrease in the recombination process for those samples synthesized by PP was observed. The results obtained are discussed considering the influence of the anodic limit of the potential employed during the preparation of the iron oxyhydroxide (β-FeOOH) precursor film, all of this related to a decrease of the oxygen defects in this material and to a decrease of Fe(II) amount that is formed during the electrodeposition process.

Characterization of Sucrose Thin Films for Biomedical Applications

Directory of Open Access Journals (Sweden)

S. L. Iconaru

2011-01-01

Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.

Significant questions in thin liquid film heat transfer

International Nuclear Information System (INIS)

Bankoff, S.G.

1994-01-01

Thin liquid films appear in many contexts, such as the cooling of gas turbine blade tips, rocket engines, microelectronics arrays, and hot fuel element surfaces in hypothetical nuclear reactor accidents. Apart from these direct cooling applications of thin liquid layers, thin films form a crucial element in determining the allowable heat flux limits in boiling. This is because the last stages of dryout almost invariably involve the rupture of a residual liquid film, either as a microlayer underneath the bubbles, or a thin annular layer in a high-quality burnout scenario. The destabilization of these thin films under the combined actions of shear stress, evaporation, and thermocapillary effects is quite complex. The later stages of actual rupture to form dry regions, which then expand, resulting in possible overheating, are even more complex and less well understood. However, significant progress has been made in understanding the behavior of these thin films, which are subject to competing instabilities prior to actual rupture. This will be reviewed briefly. Recent work on the advance, or recession, of contact lines will also be described briefly, and significant questions that still remain to be answered will be discussed. 68 refs., 7 figs

Morphology, structural and optical properties of iron oxide thin film photoanodes in photoelectrochemical cell: Effect of electrochemical oxidation

OpenAIRE

Maabong Kelebogile; Machatine Augusto G.; Hu Yelin; Braun Artur; Nambala Fred J.; Diale Mmantsae

2016-01-01

Abstract Hematite (a Fe2O3) is a promising semiconductor as photoanode in solar hydrogen production from photoelectrolysis of water due to its appropriate band gap low cost and high electrochemical stability in aqueous caustic electrolytes. Operation of such photoanode in a biased photoelectrochemical cell constitutes an anodization with consequent redox reactions at the electrode surface. a Fe2O3 thin film photoanodes were prepared by simple and inexpensive dip coating method on fluorine dop...

Novel photon management for thin-film photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

2016-11-11

The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

Thin films as an emerging platform for drug delivery

Directory of Open Access Journals (Sweden)

Sandeep Karki

2016-10-01

Full Text Available Pharmaceutical scientists throughout the world are trying to explore thin films as a novel drug delivery tool. Thin films have been identified as an alternative approach to conventional dosage forms. The thin films are considered to be convenient to swallow, self-administrable, and fast dissolving dosage form, all of which make it as a versatile platform for drug delivery. This delivery system has been used for both systemic and local action via several routes such as oral, buccal, sublingual, ocular, and transdermal routes. The design of efficient thin films requires a comprehensive knowledge of the pharmacological and pharmaceutical properties of drugs and polymers along with an appropriate selection of manufacturing processes. Therefore, the aim of this review is to provide an overview of the critical factors affecting the formulation of thin films, including the physico-chemical properties of polymers and drugs, anatomical and physiological constraints, as well as the characterization methods and quality specifications to circumvent the difficulties associated with formulation design. It also highlights the recent trends and perspectives to develop thin film products by various companies.

Properties of ordered titanium templates covered with Au thin films for SERS applications

Energy Technology Data Exchange (ETDEWEB)

Grochowska, Katarzyna, E-mail: kgrochowska@imp.gda.pl [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14 St., 80-231 Gdańsk (Poland); Siuzdak, Katarzyna [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14 St., 80-231 Gdańsk (Poland); Sokołowski, Michał; Karczewski, Jakub [Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, Narutowicza 11/12 St., 80-233 Gdańsk (Poland); Szkoda, Mariusz [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14 St., 80-231 Gdańsk (Poland); Faculty of Chemistry, Gdańsk University of Technology, Narutowicza 11/12 St., 80-233 Gdańsk (Poland); Śliwiński, Gerard [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14 St., 80-231 Gdańsk (Poland)

2016-12-01

Graphical abstract: - Highlights: • Dimpled Ti substrates prepared via anodization followed by etching. • Highly ordered nano-patterned titanium templates covered with thin Au films. • Enhanced Raman signal indicates on promising sensing material. - Abstract: Currently, roughened metal nanostructures are widely studied as highly sensitive Raman scattering substrates that show application potential in biochemistry, food safety or medical diagnostic. In this work the structural properties and the enhancement effect due to surface enhanced Raman scattering (SERS) of highly ordered nano-patterned titanium templates covered with thin (5–20 nm) gold films are reported. The templates are formed by preparation of a dense structure of TiO{sub 2} nanotubes on a flat Ti surface (2 × 2 cm{sup 2}) and their subsequent etching down to the substrate. SEM images reveal the formation of honeycomb nanostructures with the cavity diameter of 80 nm. Due to the strongly inhomogeneous distribution of the electromagnetic field in the vicinity of the Au film discontinuities the measured average enhancement factor (10{sup 7}–10{sup 8}) is markedly higher than observed for bare Ti templates. The enhancement factor and Raman signal intensity can be optimized by adjusting the process conditions and thickness of the deposited Au layer. Results confirm that the obtained structures can be used in surface enhanced sensing.

Removable Thin Films used for the Abatement and Mitigation of Beryllium

International Nuclear Information System (INIS)

Lumia, M.; Gentile, C.; Creek, K.; Sandoval, R.

2003-01-01

The use of removable thin films for the abatement of hazardous particulates has many advantages. Removable thin films are designed to trap and fix particulates in the film's matrix by adhesion. Thin films can be applied to an existing contaminated area to fix and capture the particulates for removal. The nature of the removable thin films, after sufficient cure time, is such that it can typically be removed as one continuous entity. The removable thin films can be applied to almost any surface type with a high success rate of removal

Thermochemical hydrogen generation of indium oxide thin films

Directory of Open Access Journals (Sweden)

Taekyung Lim

2017-03-01

Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

Thin Film Photovoltaic/Thermal Solar Panels

Institute of Scientific and Technical Information of China (English)

David JOHNSTON

2008-01-01

A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

Phonon transport across nano-scale curved thin films

Energy Technology Data Exchange (ETDEWEB)

Mansoor, Saad B.; Yilbas, Bekir S., E-mail: bsyilbas@kfupm.edu.sa

2016-12-15

Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

Phonon transport across nano-scale curved thin films

International Nuclear Information System (INIS)

Mansoor, Saad B.; Yilbas, Bekir S.

2016-01-01

Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

Preparation and characterization of Nb{sub 2}O{sub 5}-Al{sub 2}O{sub 3} composite oxide formed by cathodic electroplating and anodizing

Energy Technology Data Exchange (ETDEWEB)

Jang, Joo-Hee; Kim, Tae-Yoo; Kim, Nam-Jeong; Lee, Chang-Hyoung; Park, Eun-Mi [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Chan [Division of Materials Science and Engineering, Pukyong National University, Busan 608-739 (Korea, Republic of); Suh, Su-Jeong, E-mail: suhsj@skku.ac.kr [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Advanced Materials and Process Research Center for IT, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2011-11-15

Highlights: > We fabricate Nb{sub 2}O{sub 5}-Al{sub 2}O{sub 3}/Al film for high performance thin film capacitor. > The optimum condition of electrolyte composition will coat NbO{sub x} on Al without corrosion of Al during the cathodic electroplating. > Increasing annealing temperature will form Nb{sub 2}O{sub 5} crystalline. > The Al{sub 2}O{sub 3} layer will form between Nb{sub 2}O{sub 5} layer and metal Al after anodizing and the thin film capacitor with Nb{sub 2}O{sub 5}-Al{sub 2}O{sub 3}/Al improve dielectric properties. - Abstract: Al foil was coated with niobium oxide by cathodic electroplating and anodized in a neutral boric acid solution to achieve high capacitance in a thin film capacitor. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) revealed the niobium oxide layer on Al to be a hydroxide-rich amorphous phase. The film was crystalline and had stoichiometric stability after annealing at temperatures up to 600 deg. C followed by anodizing at 500 V, and the specific capacitance of the Nb{sub 2}O{sub 5}-Al{sub 2}O{sub 3} composite oxide was approximately 27% higher than that of Al{sub 2}O{sub 3} without a Nb{sub 2}O{sub 5} layer. The capacitance was quite stable to the resonance frequency. Overall, the Nb{sub 2}O{sub 5}-Al{sub 2}O{sub 3} composite oxide film is a suitable material for thin film capacitors.

Emergent Topological Phenomena in Thin Films of Pyrochlore Iridates

Science.gov (United States)

Yang, Bohm-Jung; Nagaosa, Naoto

2014-06-01

Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.

Study on the influences of reduction temperature on nickel-yttria-stabilized zirconia solid oxide fuel cell anode using nickel oxide-film electrode

Science.gov (United States)

Jiao, Zhenjun; Ueno, Ai; Suzuki, Yuji; Shikazono, Naoki

2016-10-01

In this study, the reduction processes of nickel oxide at different temperatures were investigated using nickel-film anode to study the influences of reduction temperature on the initial performances and stability of nickel-yttria-stabilized zirconia anode. Compared to conventional nickel-yttria-stabilized zirconia composite cermet anode, nickel-film anode has the advantage of direct observation at nickel-yttria-stabilized zirconia interface. The microstructural changes were characterized by scanning electron microscopy. The reduction process of nickel oxide is considered to be determined by the competition between the mechanisms of volume reduction in nickel oxide-nickel reaction and nickel sintering. Electrochemical impedance spectroscopy was applied to analyze the time variation of the nickel-film anode electrochemical characteristics. The anode performances and microstructural changes before and after 100 hours discharging and open circuit operations were analyzed. The degradation of nickel-film anode is considered to be determined by the co-effect between the nickel sintering and the change of nickel-yttria-stabilized zirconia interface bonding condition.

Thermoelectric effects of amorphous Ga-Sn-O thin film

Science.gov (United States)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

Beryllium thin films for resistor applications

Science.gov (United States)

Fiet, O.

1972-01-01

Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Final Technical Report (October 2000 - December 2003)

International Nuclear Information System (INIS)

Jie Guan; Nguyen Minh

2003-01-01

This report summarizes the results of the work conducted under the program: ''Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells'' under contract number DE-AC26-00NT40711. The program goal is to advance materials and processes that can be used to produce economical, high-performance solid oxide fuel cells (SOFC) capable of achieving extraordinary high power densities at reduced temperatures. Under this program, anode-supported thin electrolyte based on lanthanum gallate (LSMGF) has been developed using tape-calendering process. The fabrication parameters such as raw materials characteristics, tape formulations and sintering conditions have been evaluated. Dense anode supported LSGMF electrolytes with thickness range of 10-50 micron have been fabricated. High performance cathode based on Sr 0.5 Sm 0.5 CoO 3 (SSC) has been developed. Polarization of ∼0.23 ohm-cm 2 has been achieved at 600 C with Sr 0.5 Sm 0.5 CoO 3 cathode. The high-performance SSC cathode and thin gallate electrolyte have been integrated into single cells and cell performance has been characterized. Tested cells to date generally showed low performance because of low cell OCVs and material interactions between NiO in the anode and lanthanum gallate electrolyte

XRay Study of Transfer Printed Pentacene Thin Films

International Nuclear Information System (INIS)

Shao, Y.; Solin, S. A.; Hines, D. R.; Williams, E. D.

2007-01-01

We investigated the structural properties and transfer properties of pentacene thin films fabricated by thermal deposition and transfer printing onto SiO2 and plastic substrates, respectively. The dependence of the crystallite size on the printing time, temperature and pressure were measured. The increases of crystalline size were observed when pentacene thin films were printed under specific conditions, e.g. 120 deg. C and 600 psi and can be correlated with the improvement of the field effect mobility of pentacene thin-film transistors

Epitaxy, thin films and superlattices

International Nuclear Information System (INIS)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

Epitaxy, thin films and superlattices

Energy Technology Data Exchange (ETDEWEB)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

Macro stress mapping on thin film buckling

Energy Technology Data Exchange (ETDEWEB)

Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

2002-11-06

Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

Anodic oxidation of InP in pure water

International Nuclear Information System (INIS)

Robach, Y.; Joseph, J.; Bergignat, E.; Hollinger, G.

1989-01-01

It is shown that thin InP native oxide films can be grown by anodization of InP in pure water. An interfacial phosphorus-rich In(PO 3 ) 3 -like condensed phosphate is obtained this way. This condensed phosphate has good passivating properties and can be used in electronic device technology. The chemical composition of these native oxides was found similar to that of an anodic oxide grown in an anodization in glycol and water (AGW) electrolyte. From the similarity between the two depth profiles observed in pure water and AGW electrolyte, they can conclude that dissolution phenomena do not seem to play a major role. The oxide growth seems to be controlled by the drift of ionic species under the electric field

Theoretical investigation of the thermodynamic properties of metallic thin films

International Nuclear Information System (INIS)

Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac

2015-01-01

The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

Theoretical investigation of the thermodynamic properties of metallic thin films

Energy Technology Data Exchange (ETDEWEB)

Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

2015-05-29

The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

Phosphazene like film formation on InP in liquid ammonia (223 K)

Energy Technology Data Exchange (ETDEWEB)

Gonçalves, A.-M., E-mail: goncalves@chimie.uvsq.fr; Njel, C.; Mathieu, C.; Aureau, D.; Etcheberry, A.

2013-07-01

An anodic photo-galvanostatic treatment at low current density (1 μA·cm{sup −2}) is carried out on n-InP semiconductor in liquid ammonia (223 K). The gradual chemical evolution of the surface is studied as a function of the anodic charge. Proof and reproducibility of the chemical transformation of the surface are clearly evidenced by X-ray photoelectron spectroscopy (XPS) analyses. Like by cyclic voltammetry, the perfect coverage of the InP surface by a thin phosphazene like film is also revealed by XPS data. However, a low anodic charge (≈ 0.5 mC·cm{sup −2}) is required by photo-galvanostatic treatment while a higher anodic charge (≈ 7 mC·cm{sup −2}) is involved by cyclic voltammetry. The excess of charge could be related to ammonia oxidation during the formation of the passivating film. This result proves the electrochemical oxidation of the solvent as a determinant step of the mechanism film formation. - Highlights: ► Cyclic voltammetry and galvanostatic modes on n-InP in liquid ammonia (223 K). ► A thin film growth is reached by photo-anodic polarization. ► The same phosphazene like film is evidenced by X-ray photoelectron spectroscopy. ► An excess of charge is observed by cyclic voltammetry. ► An electrochemical oxidation step of the solvent is assumed.

Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

CERN Document Server

Buckley, D N

2002-01-01

Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

Effect of solution concentration on MEH-PPV thin films

Science.gov (United States)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

Perovskite phase thin films and method of making

Science.gov (United States)

Boyle, Timothy J.; Rodriguez, Mark A.

2000-01-01

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

Directory of Open Access Journals (Sweden)

Cui Yan

2014-01-01

Full Text Available Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47O3 (PZT thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

Substrate-HTcS thin film interaction studies by (S)TEM

NARCIS (Netherlands)

Ramaekers, P.P.J.; Klepper, D.; Kitazawa, K.; Ishiguro, T.

1989-01-01

This paper concerns with compatibility aspects beween HTcS thin film either their substrates. The influence of substrate-thin film interaction and thin film microstructure on the superconducting properties is discussed. In this respect, data based on (S)TEM observations are presented. It is

Low-field vortex dynamics in various high-Tc thin films

Indian Academy of Sciences (India)

Abstract. We present a novel ac susceptibility technique for the study of vortex creep in supercon- ducting thin films. With this technique we study the dynamics of dilute vortices in c-axis oriented. Y-123, Hg-1212, and Tl-1212 thin films, as well as a-axis oriented Hg-1212 thin films. Results on the Hg-1212 and Tl-1212 thin ...

Atomic Structure Control of Silica Thin Films on Pt(111)

KAUST Repository

Crampton, Andrew S

2015-05-27

Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

Electronic properties of electrolyte/anodic alumina junction during porous anodizing

Energy Technology Data Exchange (ETDEWEB)

Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka Street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Jagminas, A. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany); InnoMat GmbH, Chemnitz (Germany); Goedel, Werner A. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

2007-03-15

The growth of porous oxide films on aluminum (99.99% purity), formed in 4% phosphoric acid was studied as a function of the anodizing voltage (23-53 V) using a re-anodizing technique and transmission electron microscopy (TEM) study. The chemical dissolution behavior of freshly anodized and annealed at 200 deg. C porous alumina films was studied. The obtained results indicate that porous alumina has n-type semiconductive behavior during anodizing in 4% phosphoric acid. During anodising, up to 39 V in the barrier layer of porous films, one obtains an accumulation layer (the thickness does not exceed 1 nm) where the excess electrons have been injected into the solid producing a downward bending of the conductive and valence band towards the interface. The charge on the surface of anodic oxide is negative and decreases with growing anodizing voltage. At the anodizing voltage of about 39 V, the charge on the surface of anodic oxide equals to zero. Above 39 V, anodic alumina/electrolyte junction injects protons from the electrolyte. These immobile positive charges in the surface layer of oxide together with an ionic layer of hydroxyl ions concentrated near the interface create a field, which produces an upward bending of the bands.

Silicon-integrated thin-film structure for electro-optic applications

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick Joseph

2000-01-01

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

Nitrogen incorporation in sputter deposited molybdenum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

2016-03-15

In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

Local deposition of polypyrrole on aluminum by anodizing, laser irradiation, and electrolytic polymerization and its application to the fabrication of micro-actuators

Energy Technology Data Exchange (ETDEWEB)

Akiyama, Y. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan); Kikuchi, T. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan)]. E-mail: kiku@elechem1-mc.eng.hokudai.ac.jp; Ueda, M. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan); Iida, M. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan); Sakairi, M. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan); Takahashi, H. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan)

2006-06-15

Polypyrrole was deposited at selected areas on aluminum by anodizing, laser irradiation, and electrolytic polymerization, and the application of the technique for fabricating micro-actuators was attempted. Aluminum specimens covered with porous type anodic oxide films were irradiated with a pulsed Nd-YAG laser to remove the oxide films locally, and then thin Ni layers were deposited at areas where film had been removed. Polypyrrole could be successfully deposited only on the Ni layer by anodic polarization of the specimens in pyrrole monomer solution, and a polypyrrole/Ni bilayer structure could be obtained by dissolution of the aluminum substrate and anodic oxide film in NaOH solutions. The bilayer structure was found to be inactive to doping and dedoping of ions during anodic and cathodic polarization. A three-layer structure, nitrocellulose/Ni/polypyrrole, fabricated by electrolytic polymerization after nitrocellulose coating on a Ni layer detached from the aluminum substrate, showed ion-doping and -dedoping activity, suggesting the possibility of fabricating micro-actuators in this manner.

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

Science.gov (United States)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Optical constant of thin gold films

DEFF Research Database (Denmark)